Stress analysis for wall structure in mobile hot cell design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bahrin, Muhammad Hannan, E-mail: hannan@nuclearmalaysia.gov.my; Rahman, Anwar Abdul, E-mail: anwar@nuclearmalaysia.gov.my; Hamzah, Mohd Arif, E-mail: arif@nuclearmalaysia.gov.my

Malaysian Nuclear Agency is developing a Mobile Hot Cell (MHC) in order to handle and manage Spent High Activity Radioactive Sources (SHARS) such as teletherapy heads and irradiators. At present, there are only two units of MHC in the world, in South Africa and China. Malaysian Mobile Hot cell is developed by Malaysian Nuclear Agency with the assistance of IAEA expert, based on the design of South Africa and China, but with improved features. Stress analysis has been performed on the design in order to fulfil the safety requirement in operation of MHC. This paper discusses the loading analysis effectmore » from the sand to the MHC wall structure.« less

Domain walls and Dzyaloshinskii-Moriya interaction in epitaxial Co/Ir(111) and Pt/Co/Ir(111)

NASA Astrophysics Data System (ADS)

Perini, Marco; Meyer, Sebastian; Dupé, Bertrand; von Malottki, Stephan; Kubetzka, André; von Bergmann, Kirsten; Wiesendanger, Roland; Heinze, Stefan

2018-05-01

We use spin-polarized scanning tunneling microscopy and density functional theory (DFT) to study domain walls (DWs) and the Dzyaloshinskii-Moriya interaction (DMI) in epitaxial films of Co/Ir(111) and Pt/Co/Ir(111). Our measurements reveal DWs with fixed rotational sense for one monolayer of Co on Ir, with a wall width around 2.7 nm. With Pt islands on top, we observe that the DWs occur mostly in the uncovered Co/Ir areas, suggesting that the wall energy density is higher in Pt/Co/Ir(111). From DFT we find an interfacial DMI that stabilizes Néel-type DWs with clockwise rotational sense. The calculated DW widths are in good agreement with the experimental observations. The calculated total DMI nearly doubles from Co/Ir(111) to Pt/Co/Ir(111); however, in the latter case the DMI is almost entirely due to the Pt with only a minor Ir contribution. Therefore a simple additive effect, in which both interfaces contribute significantly to the total DMI, is not observed for one atomic Co layer sandwiched between Ir and Pt.

Self-assembly of single-wall carbon nanotubes during the cooling process of hot carbon gas.

PubMed

Wen, Yushi; Zheng, Ke; Long, Xinping; Li, Ming; Xue, Xianggui; Dai, Xiaogan; Deng, Chuan

2018-04-25

In this work, self-assembly mechanism of single-wall carbon nanotube (SWCNT) during the annealing process of hot gaseous carbon is presented using reactive force field (ReaxFF)-based reactive molecular simulations. A series of simulations were performed on the evolution of reactive carbon gas. The simulation results show that the reactive carbon gas can be assembled into regular SWCNT without a catalyst. Five distinct stages of SWCNT self-assembly are proposed. For some initial configurations, the CNT was found to spin at an ultra-high rate after the nucleation. Graphical abstract Self-assembly process of single-wall carbon nanotube from the annealing of hot gaseous carbon.

Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

NASA Astrophysics Data System (ADS)

Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

2013-09-01

This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

Epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

A proposal for epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

The Selective Epitaxy of Silicon at Low Temperatures.

NASA Astrophysics Data System (ADS)

Lou, Jen-Chung

1991-01-01

This dissertation has developed a process for the selective epitaxial growth (SEG) of silicon at low temperatures using a dichlorosilane-hydrogen mixture in a hot-wall low pressure chemical vapor deposition (LPCVD) reactor. Some basic issues concerning the quality of epilayers --substrate preparation, ex-situ and in-situ cleaning, and deposition cycle, have been studied. We find it necessary to use a plasma etch to open epitaxial windows for the SEG of Si. A cycled plasma etch, a thin sacrificial oxide growth, and an oxide etching step can completely remove plasma-etch-induced surface damage and contaminants, which result in high quality epilayers. A practical wafer cleaning step is developed for low temperature Si epitaxial growth. An ex-situ HF vapor treatment can completely remove chemical oxide from the silicon surface and retard the reoxidation of the silicon surface. An in-situ low-concentration DCS cycle can aid in decomposition of surface oxide during a 900 ^circC H_2 prebake step. An HF vapor treatment combined with a low-concentration of DCS cycle consistently achieves defect-free epilayers at 850^circC and lower temperatures. We also show that a BF_sp{2}{+ } or F^+ ion implantation is a potential ex-situ wafer cleaning process for SEG of Si at low temperatures. The mechanism for the formation of surface features on Si epilayers is also discussed. Based on O ^+ ion implantation, we showed that the oxygen incorporation in silicon epilayers suppresses the Si growth rate. Therefore, we attribute the formation of surface features to the local reduction of the Si growth rate due to the dissolution of oxide islands at the epi/substrate interface. Finally, with this developed process for the SEG of silicon, defect-free overgrown epilayers are also obtained. This achievement demonstrates the feasibility for the future silicon-on-oxide (SOI) manufacturing technology.

Convective response of a wall-mounted hot-film sensor in a shock tube

NASA Technical Reports Server (NTRS)

Roberts, A. Sidney, Jr.; Ortgies, Kelly R.; Gartenberg, Ehud; Carraway, Debra L.

1991-01-01

Shock tube experiments were performed in order to determine the response of a single hot-film element of a sensor array to transiently induced flow behind weak normal shock waves. The experiments attempt to isolate the response due only to the change in convective heat transfer at the hot-film surface mounted on the wall of the shock tube. The experiments are described, the results being correlated with transient boundary layer theory and compared with an independent set of experimental results. One of the findings indicates that the change in the air properties (temperature and pressure) precedes the air mass transport, causing an ambiguity in the sensor response to the development of the velocity boundary layer. Also, a transient, local heat transfer coefficient is formulated to be used as a forcing function in an hot-film instrument model and simulation which remains under investigation.

Investigation of hydrogen recycling in long-duration discharges and its modification with a hot wall in the spherical tokamak QUEST

NASA Astrophysics Data System (ADS)

Hanada, K.; Yoshida, N.; Honda, T.; Wang, Z.; Kuzmin, A.; Takagi, I.; Hirata, T.; Oya, Y.; Miyamoto, M.; Zushi, H.; Hasegawa, M.; Nakamura, K.; Fujisawa, A.; Idei, H.; Nagashima, Y.; Watanabe, O.; Onchi, T.; Kuroda, K.; Long, H.; Watanabe, H.; Tokunaga, K.; Higashijima, A.; Kawasaki, S.; Nagata, T.; Takase, Y.; Fukuyama, A.; Mitarai, O.

2017-12-01

Fully non-inductive plasma maintenance was achieved by a microwave of 8.2 GHz and 40 kW for more than 1 h 55 min with a well-controlled plasma-facing wall (PFW) temperature of 393 K, using a hot wall in the middle-sized spherical tokamak QUEST, until the discharge was finally terminated by the uncontrollability of the density. The PFW was composed of atmospheric plasma-sprayed tungsten and stainless steel. The hot wall plays an essential role in reducing the amount of wall-stored hydrogen and facilitates hydrogen recycling. The behaviour of fuel hydrogen in the PFW was investigated by monitoring the injection and evacuation of hydrogen into and from the plasma-producing vessel. A fuel particle balance equation based on the presence of a hydrogen transport barrier between the deposited layer and the substrate was applied to the long-duration discharges. It was found that the model could readily predict the observed behaviour in which a higher wall temperature likely gives rise to faster wall saturation.

Method for rapid, controllable growth and thickness, of epitaxial silicon films

DOEpatents

Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

2009-10-13

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

DOEpatents

Iwancizko, Eugene; Jones, Kim M.; Crandall, Richard S.; Nelson, Brent P.; Mahan, Archie Harvin

2001-01-01

The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

Fibers comprised of epitaxially grown single-wall carbon nanotubes, and a method for added catalyst and continuous growth at the tip

DOEpatents

Kittrell, W. Carter; Wang, Yuhuang; Kim, Myung Jong; Hauge, Robert H.; Smalley, Richard E.; Marek leg, Irene Morin

2010-06-01

The present invention is directed to fibers of epitaxially grown single-wall carbon nanotubes (SWNTs) and methods of making same. Such methods generally comprise the steps of: (a) providing a spun SWNT fiber; (b) cutting the fiber substantially perpendicular to the fiber axis to yield a cut fiber; (c) etching the cut fiber at its end with a plasma to yield an etched cut fiber; (d) depositing metal catalyst on the etched cut fiber end to form a continuous SWNT fiber precursor; and (e) introducing feedstock gases under SWNT growth conditions to grow the continuous SWNT fiber precursor into a continuous SWNT fiber.

Giant Permittivity in Epitaxial Ferroelectric Heterostructures

NASA Astrophysics Data System (ADS)

Erbil, A.; Kim, Y.; Gerhardt, R. A.

1996-08-01

A giant permittivity associated with the motion of domain walls is reported in epitaxial hetero- structures having alternating layers of ferroelectric and nonferroelectric oxides. At low frequencies, permittivities as high as 420 000 are found. Real and imaginary parts of the dielectric constant show large dispersion at high frequencies. In dc measurements, a nonlinear resistance is observed with a well-defined threshold field correlated with the dc bias-field dependence of ac permittivities. We interpret the observations as a result of the motion of a pinned domain wall lattice at low electric fields and sliding-mode motion at high electric fields.

Commercial aspects of epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

NASA Technical Reports Server (NTRS)

Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

2014-01-01

The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

Dynamical properties of epitaxial ferroelectric superlattices

NASA Astrophysics Data System (ADS)

Kim, Y.; Gerhardt, R. A.; Erbil, A.

1997-04-01

The dynamical properties of epitaxial ferroelectric heterostructures have been investigated by studying the dielectric behavior under external electric field. A phenomenon with a giant permittivity was observed. At low frequencies, real permittivities as high as 420 000 have been measured. Real and imaginary parts of the dielectric constant show large dispersion at high frequencies. In dc measurements, a nonlinear resistance is observed with a well-defined threshold field, correlating with the dc bias-field dependence of ac permittivities. We model these observations as a result of the motion of pinned domain-wall lattices, having sliding-mode motion at high electric fields. The good agreement between the experimental and theoretical results suggests that the deposited interdigitated electrode pattern plays a crucial role in controlling domain-wall dynamics. The pinning of the domain wall comes from a nucleation barrier to the creation of new domain walls.

Hot gas filter and system assembly

DOEpatents

Lippert, Thomas Edwin; Palmer, Kathryn Miles; Bruck, Gerald Joseph; Alvin, Mary Anne; Smeltzer, Eugene E.; Bachovchin, Dennis Michael

1999-01-01

A filter element for separating fine dirty particles from a hot gas. The filter element comprises a first porous wall and a second porous wall. Each porous wall has an outer surface and an inner surface. The first and second porous walls being coupled together thereby forming a substantially closed figure and open at one end. The open end is formed to be coupled to a hot gas clean up system support structure. The first and second porous walls define a channel beginning at the open end and terminate at the closed end through which a filtered clean gas can flow through and out into the clean gas side of a hot gas clean up system.

Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

DOE PAGES

Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; ...

2015-11-25

Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match themore » polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.« less

Hot gas filter and system assembly

DOEpatents

Lippert, T.E.; Palmer, K.M.; Bruck, G.J.; Alvin, M.A.; Smeltzer, E.E.; Bachovchin, D.M.

1999-08-31

A filter element is described for separating fine dirty particles from a hot gas. The filter element comprises a first porous wall and a second porous wall. Each porous wall has an outer surface and an inner surface. The first and second porous walls being coupled together thereby forming a substantially closed figure and open at one end. The open end is formed to be coupled to a hot gas clean up system support structure. The first and second porous walls define a channel beginning at the open end and terminate at the closed end through which a filtered clean gas can flow through and out into the clean gas side of a hot gas clean up system. 8 figs.

Overview on Pendeo-Epitaxy of GaN-Based Heterostructures for Novel Devices Applications

DTIC Science & Technology

2006-11-01

pendeo-epitaxy uses the metal organic chemical vapor deposition (MOCVD) technique that commonly requires ammonia (NH3) and trimethyl gallium ( TMG ...lateral growth rate and the crystallography of the side walls of the pendeo-epitaxial GaN are the growth temperature, the ammonia to TMG flow rate...pressure of 100 Torr and V:III ratio of 2600. It is known that the ammonia to TMG (V:III) molar flow rate ratio plays a major role for the lateral to

Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

NASA Astrophysics Data System (ADS)

Guoguo, Yan; Feng, Zhang; Yingxi, Niu; Fei, Yang; Xingfang, Liu; Lei, Wang; Wanshun, Zhao; Guosheng, Sun; Yiping, Zeng

2016-06-01

Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2-SiH4-C2H4-HCl. The effect of the SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH4/H2 ratio and the influence mechanism of chlorine has been investigated. With the reactor pressure increasing from 40 to 100 Torr, the growth rate increased to 52 μm/hand then decreased to 47 μm/h, which is due to the joint effect of H2 and HCl etching as well as the formation of Si clusters at higher reactor pressure. The surface root mean square (RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h. The scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Project supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

NASA Astrophysics Data System (ADS)

Marx, M.; Grundmann, A.; Lin, Y.-R.; Andrzejewski, D.; Kümmell, T.; Bacher, G.; Heuken, M.; Kalisch, H.; Vescan, A.

2018-02-01

The influence of the main growth parameters on the growth mechanism and film formation processes during metalorganic vapor-phase epitaxy (MOVPE) of two-dimensional MoS2 on sapphire (0001) have been investigated. Deposition was performed using molybdenum hexacarbonyl and di- tert-butyl sulfide as metalorganic precursors in a horizontal hot-wall MOVPE reactor from AIXTRON. The structural properties of the MoS2 films were analyzed by atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. It was found that a substrate prebake step prior to growth reduced the nucleation density of the polycrystalline film. Simultaneously, the size of the MoS2 domains increased and the formation of parasitic carbonaceous film was suppressed. Additionally, the influence of growth parameters such as reactor pressure and surface temperature is discussed. An upper limit for these parameters was found, beyond which strong parasitic deposition or incorporation of carbon into MoS2 took place. This carbon contamination became significant at reactor pressure above 100 hPa and temperature above 900°C.

Epitaxial growth and characterization of Si/NiSi 2/Si(111) heterostructures

NASA Astrophysics Data System (ADS)

Rizzi, Angela; Förster, A.; Lüth, H.; Slijkerman, W.

1989-04-01

Si/NiSi 2/Si(111) heterostructures are grown under UHV conditions. The well known "template" method is used to produce the epitaxial NiSi 2 interlayer. On top of the suicide, the silicon epitaxial growth is obtained by means of gas phase reaction of SiH 4 at a surface temperature of 500° C. The Si growth rate is strongly enhanced by predissociation of SiH 4 using a hot tungsten filament in the vicinity of the surface. The single steps of the growth are followed in-situ by means of AES, HREELS and LEED analysis. Ex-situ high resolution RBS analysis is also applied for characterization.

Seed crystals and catalyzed epitaxy of single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Wang, Yuhuang

This thesis demonstrates the continued growth of single-walled carbon nanotubes (SWNTs) from seeded SWNTs in a way analogous to epitaxy or cloning; that is, the SWNTs grow as a seamless extension to the existing seeded SWNTs and have the same diameter and chirality as those of the SWNT seeds. The experiments were carried out in three key steps, including: (1) preparing a macroscopic array of open-ended SWNTs; (2) reductively docking transition metals as a catalyst to the nanometer-sized open ends; and then (3) heating the whole up to 700--850°C in the presence of a carbon feedstock such as ethanol or ethylene. The resulting SWNT ropes inherit the diameters and chirality from the seeded SWNTs, as indicated by the closely matched frequencies of Raman radial breathing modes before and after the growth. As a control, only sparse nanotubes grew from closed-ended SWNTs, ruling out spontaneous nucleation as a dominating mechanism in our experiments. This experiment proved for the first time the growth of SWNTs can be separated from the nucleation step. The ability to separate the typically inefficient nucleation step from the growth of SWNTs and to restart the growth opens the possibility of amplifying SWNTs with only the desired (n, m). The success in the continued growth was enabled with the creation of macroscopic arrays of open-ended SWNTs from a neat SWNT fiber. A variety of techniques including cryo-microtoming and surface etching chemistry have been developed to produce a macroscopic (˜1200mum2), aligned, and clean---largely free of amorphous carbon, oxides, and metal residuals---SWNT substrate with open-ended SWNTs aligned along the fiber axis. Alternatively, the fiber was milled perpendicular to the fiber axis with a gallium focused ion beam to produce a planar, free-standing, ultra-thin, "bed-of-nails" SWNT membrane---a single layer of parallel SWNTs densely packed and aligned along the normal of the membrane.

Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Mu, Wei; Kwak, Eun-Hye; Chen, Bingan; Huang, Shirong; Edwards, Michael; Fu, Yifeng; Jeppson, Kjell; Teo, Kenneth; Jeong, Goo-Hwan; Liu, Johan

2016-05-01

HASynthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT's growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1 - 2 tubes/ μm with high growth quality as shown by Raman analysis. [Figure not available: see fulltext.

Additive Manufacturing of IN100 Superalloy Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair: Process Development, Modeling, Microstructural Characterization, and Process Control

NASA Astrophysics Data System (ADS)

Acharya, Ranadip; Das, Suman

2015-09-01

This article describes additive manufacturing (AM) of IN100, a high gamma-prime nickel-based superalloy, through scanning laser epitaxy (SLE), aimed at the creation of thick deposits onto like-chemistry substrates for enabling repair of turbine engine hot-section components. SLE is a metal powder bed-based laser AM technology developed for nickel-base superalloys with equiaxed, directionally solidified, and single-crystal microstructural morphologies. Here, we combine process modeling, statistical design-of-experiments (DoE), and microstructural characterization to demonstrate fully metallurgically bonded, crack-free and dense deposits exceeding 1000 μm of SLE-processed IN100 powder onto IN100 cast substrates produced in a single pass. A combined thermal-fluid flow-solidification model of the SLE process compliments DoE-based process development. A customized quantitative metallography technique analyzes digital cross-sectional micrographs and extracts various microstructural parameters, enabling process model validation and process parameter optimization. Microindentation measurements show an increase in the hardness by 10 pct in the deposit region compared to the cast substrate due to microstructural refinement. The results illustrate one of the very few successes reported for the crack-free deposition of IN100, a notoriously "non-weldable" hot-section alloy, thus establishing the potential of SLE as an AM method suitable for hot-section component repair and for future new-make components in high gamma-prime containing crack-prone nickel-based superalloys.

Large structural, thin-wall castings made of metals subject to hot tearing, and their fabrication

NASA Technical Reports Server (NTRS)

Smashey, Russell W. (Inventor)

2001-01-01

An article, such as a gas turbine engine mixer, is made by providing a mold structure defining a thin-walled, hollow article, and a base metal that is subject to hot tear cracking when cast in a generally equiaxed polycrystalline form, such as Rene' 108 and Mar-M247. The article is fabricated by introducing the molten base metal into the mold structure, and directionally solidifying the base metal in the mold structure to form a directionally oriented structure. The directionally oriented structure may be formed of a single grain or oriented multiple grains.

Life prediction of thermally highly loaded components: modelling the damage process of a rocket combustion chamber hot wall

NASA Astrophysics Data System (ADS)

Schwarz, W.; Schwub, S.; Quering, K.; Wiedmann, D.; Höppel, H. W.; Göken, M.

2011-09-01

During their operational life-time, actively cooled liners of cryogenic combustion chambers are known to exhibit a characteristic so-called doghouse deformation, pursued by formation of axial cracks. The present work aims at developing a model that quantitatively accounts for this failure mechanism. High-temperature material behaviour is characterised in a test programme and it is shown that stress relaxation, strain rate dependence, isotropic and kinematic hardening as well as material ageing have to be taken into account in the model formulation. From fracture surface analyses of a thrust chamber it is concluded that the failure mode of the hot wall ligament at the tip of the doghouse is related to ductile rupture. A material model is proposed that captures all stated effects. Basing on the concept of continuum damage mechanics, the model is further extended to incorporate softening effects due to material degradation. The model is assessed on experimental data and quantitative agreement is established for all tests available. A 3D finite element thermo-mechanical analysis is performed on a representative thrust chamber applying the developed material-damage model. The simulation successfully captures the observed accrued thinning of the hot wall and quantitatively reproduces the doghouse deformation.

Hot gas path component having near wall cooling features

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Carlos Miguel; Kottilingam, Srikanth Chandrudu; Lacy, Benjamin Paul

A method for providing micro-channels in a hot gas path component includes forming a first micro-channel in an exterior surface of a substrate of the hot gas path component. A second micro-channel is formed in the exterior surface of the hot gas path component such that it is separated from the first micro-channel by a surface gap having a first width. The method also includes disposing a braze sheet onto the exterior surface of the hot gas path component such that the braze sheet covers at least of portion of the first and second micro-channels, and heating the braze sheetmore » to bond it to at least a portion of the exterior surface of the hot gas path component.« less

Hot wire production of single-wall and multi-wall carbon nanotubes

DOEpatents

Dillon, Anne C.; Mahan, Archie H.; Alleman, Jeffrey L.

2010-10-26

Apparatus (210) for producing a multi-wall carbon nanotube (213) may comprise a process chamber (216), a furnace (217) operatively associated with the process chamber (216), and at least one filament (218) positioned within the process chamber (216). At least one power supply (220) operatively associated with the at least one filament (218) heats the at least one filament (218) to a process temperature. A gaseous carbon precursor material (214) operatively associated with the process chamber (216) provides carbon for forming the multi-wall carbon nanotube (213). A metal catalyst material (224) operatively associated with the process (216) catalyzes the formation of the multi-wall carbon nanotube (213).

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

NASA Astrophysics Data System (ADS)

Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

2017-10-01

While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

A temperature correlation for the radiation resistance of a thick-walled circular duct exhausting a hot gas

NASA Technical Reports Server (NTRS)

Mahan, J. R.; Cline, J. G.; Jones, J. D.

1984-01-01

It is often useful to know the radiation impedance of an unflanged but thick-walled circular duct exhausting a hot gas into relatively cold surroundings. The reactive component is shown to be insensitive to temperature, but the resistive component is shown to be temperature dependent. A temperature correlation is developed permitting prediction of the radiation resistance from a knowledge of the temperature difference between the ambient air and the gas flowing from the duct, and a physical basis for this correlation is presented.

Epitaxial graphene

NASA Astrophysics Data System (ADS)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

Hybrid-PIC modeling of laser-plasma interactions and hot electron generation in gold hohlraum walls

NASA Astrophysics Data System (ADS)

Thoma, C.; Welch, D. R.; Clark, R. E.; Rose, D. V.; Golovkin, I. E.

2017-06-01

The walls of the hohlraum used in experiments at the national ignition facility are heated by laser beams with intensities ˜ 10 15 W/cm2, a wavelength of ˜ 1 / 3 μm, and pulse lengths on the order of a ns, with collisional absorption believed to be the primary heating mechanism. X-rays generated by the hot ablated plasma at the gold walls are then used to implode a target in the hohlraum interior. In addition to the collisional absorption of laser energy at the walls, non-linear laser-plasma interactions (LPI), such as stimulated Raman scattering and two plasmon decay, are believed to generate a population of supra-thermal electrons which, if present in the hohlraum, can have a deleterious effect on target implosion. We describe results of hohlraum modeling using a hybrid particle-in-cell code. To enable this work, new particle-based algorithms for a multiple-ion magneto-hydrodynamic (MHD) treatment, and a particle-based ray-tracing model were developed. The use of such hybrid methods relaxes the requirement to resolve the laser wavelength, and allows for relatively large-scale hohlraum simulations with a reasonable number of cells. But the non-linear effects which are believed to be the cause of hot electron generation can only be captured by fully kinetic simulations with good resolution of the laser wavelength. For this reason, we employ a two-tiered approach to hohlraum modeling. Large-scale simulations of the collisional absorption process can be conducted using the fast quasi-neutral MHD algorithm with fluid particle species. From these simulations, we can observe the time evolution of the hohlraum walls and characterize the density and temperature profiles. From these results, we can transition to smaller-scale highly resolved simulations using traditional kinetic particle-in-cell methods, from which we can fully model all of the non-linear laser-plasma interactions, as well as assess the details of the electron distribution function. We find that vacuum

Interfacing epitaxial oxides to gallium nitride

NASA Astrophysics Data System (ADS)

Losego, Mark Daniel

solutions. By controlling the composition of these alloys, the oxide's lattice parameter can be engineered to match GaN and reduce interfacial state density. Compositional control is a universal challenge to oxide MBE, and the MgO-CaO system (MCO) is further complicated by magnesium's high volatility and the lack of a thermodynamically stable phase. Through a detailed investigation of MgO's deposition rate and subsequent impact on MCO composition, the process space for achieving lattice-matched compositions to GaN are fully mapped. Lattice-matched compositions are demonstrated to have the narrowest off-axis rocking curve widths ever reported for an epitaxial oxide deposited directly on GaN (0.7° in φ-circle for 200 reflection). Epitaxial deposition of the ferroelectric (Ba,Sr)TiO3 by hot RF sputtering on GaN surfaces is also demonstrated. Simple MOS capacitors are fabricated from epitaxial rocksalt oxides and (Ba,Sr)TiO3 layers deposited on n-GaN substrates. Current-voltage measurements reveal that BST epilayers have 5 orders of magnitude higher current leakage than rocksalt epilayers. This higher leakage is attributed to the smaller band offset expected at this interface; modeling confirms that electronic transport occurs by Schottky emission. In contrast, current transport across the rocksalt oxide/GaN interface occurs by Frenkel-Poole emission and can be reduced with pre-deposition surface treatments. Finally, through this work, it is realized that the integration of oxides with III-nitrides requires an appreciation of many different fields of research including materials science, surface science, and electrical engineering. By recognizing the importance that each of these fields play in designing oxide/III-nitride interfaces, this thesis has the opportunity to explore other related phenomena including accessing metastable phases through MBE (ytterbium monoxide), spinodal decomposition in metastable alloys (MCO), how polar surfaces grown by MBE compensate their bound

Domain wall effects on the magnetoresistance in epitaxial nanostructures

NASA Astrophysics Data System (ADS)

Perason, David; Zambano, Antonio; Lukaszew, R. Alejandra

2004-03-01

It has been postulated that adiabatic magneto-transport in sufficiently small contacts in nano-bridges should exhibit significant magnetoresistance at room temperature.[1] In order to study this phenomenon we have patterned nano-bridges on epitaxial ferromagnetic thin films using e-beam lithography. We have tested (001) and (111) oriented Ni films, as well as (001) and (011) CrO2 films. We have patterned bridges with different geometric orientations with respect to the crystallographic axes in the samples. We will show magnetic force microscopy images of the devices and will compare them with OOMMF simulations of the magnetization dynamics during reversal. The magneto-transport was studied using 4-point probe with AC current and Lock-In techniques. We notice here that the size of the observed effect is inversely proportional to the width of the nano-contact. The typical MR observed was 1-2at room temperature. We will show a comparison of MR effects observed in the various films and geometries described. [1]. P. Bruno, Phys. Rev. Lett. 83, 2425, (1999).

The role of the substrate surface morphology and water in growth of vertically aligned single-walled carbon nanotubes.

PubMed

Pint, Cary; Pheasant, Sean; Nicholas, Nolan; Horton, Charles; Hauge, Robert

2008-11-01

Growth of high quality, vertically aligned single-walled carbon nanotubes (carpets) is achieved using a rapid insertion hot filament chemical vapor deposition (HF-CVD) technique. The effect of the substrate morphology on growth is explored by comparing carpets grown on epitaxially polished MgO substrates to those grown on "as-cut", macroscopically rough MgO substrates. Depending on the substrate morphology, we observe differences in both the overall carpet morphology as well as the diameter distribution of nanotubes grown in the carpet based on optical measurements. In addition, we explore the role of water in the growth of carpets on MgO and the conventional Al2O3 coated Si substrates. We find that the addition of a small amount of water is beneficial to the growth rates of the SWNT carpets, enhancing the growth rates by up to eight times.

HOT CELL BUILDING, TRA632, INTERIOR. CONTEXTUAL VIEW OF HOT CELL ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

HOT CELL BUILDING, TRA-632, INTERIOR. CONTEXTUAL VIEW OF HOT CELL NO. 2 FROM STAIRWAY ALONG NORTH WALL. OBSERVATION WINDOW ALONG WEST SIDE BENEATH "CELL 2" SIGN. DOORWAY IN LEFT OF VIEW LEADS TO CELL 1 WORK AREA OR TO EXIT OUTDOORS TO NORTH. RADIATION DETECTION MONITOR TO RIGHT OF DOOR. CAMERA FACING SOUTHWEST. INL NEGATIVE NO. HD46-28-3. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

Epitaxial solar cells fabrication

NASA Technical Reports Server (NTRS)

Daiello, R. V.; Robinson, P. H.; Kressel, H.

1975-01-01

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

HOT CELL BUILDING, TRA632, INTERIOR. HOT CELL NO. 1 (THE ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

HOT CELL BUILDING, TRA-632, INTERIOR. HOT CELL NO. 1 (THE FIRST BUILT) IN LABORATORY 101. CAMERA FACES SOUTHEAST. SHIELDED OPERATING WINDOWS ARE ON LEFT (NORTH) SIDE. OBSERVATION WINDOW IS AT LEFT OF VIEW (ON WEST SIDE). PLASTIC COVERS SHROUD MASTER/SLAVE MANIPULATORS AT WINDOWS IN LEFT OF VIEW. NOTE MINERAL OIL RESERVOIR ABOVE "CELL 1" SIGN, INDICATING LEVEL OF THE FLUID INSIDE THE THICK WINDOWS. HOT CELL HAS BEVELED CORNER BECAUSE A SQUARED CORNER WOULD HAVE SUPPLIED UNNECESSARY SHIELDING. NOTE PUMICE BLOCK WALL AT LEFT OF VIEW. INL NEGATIVE NO. HD46-28-1. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

Epitaxial growth of hybrid nanostructures

NASA Astrophysics Data System (ADS)

Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

2018-02-01

Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

Highly Sensitive Hot-Wire Anemometry Based on Macro-Sized Double-Walled Carbon Nanotube Strands.

PubMed

Wang, Dingqu; Xiong, Wei; Zhou, Zhaoying; Zhu, Rong; Yang, Xing; Li, Weihua; Jiang, Yueyuan; Zhang, Yajun

2017-08-01

This paper presents a highly sensitive flow-rate sensor with carbon nanotubes (CNTs) as sensing elements. The sensor uses micro-size centimeters long double-walled CNT (DWCNT) strands as hot-wires to sense fluid velocity. In the theoretical analysis, the sensitivity of the sensor is demonstrated to be positively related to the ratio of its surface. We assemble the flow sensor by suspending the DWCNT strand directly on two tungsten prongs and dripping a small amount of silver glue onto each contact between the DWCNT and the prongs. The DWCNT exhibits a positive TCR of 1980 ppm/K. The self-heating effect on the DWCNT was observed while constant current was applied between the two prongs. This sensor can evidently respond to flow rate, and requires only several milliwatts to operate. We have, thus far, demonstrated that the CNT-based flow sensor has better sensitivity than the Pt-coated DWCNT sensor.

Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

PubMed Central

Mihnev, Momchil T.; Tolsma, John R.; Divin, Charles J.; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A.; MacDonald, Allan H.; Norris, Theodore B.

2015-01-01

In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. PMID:26399955

Epitaxial growth of CZT(S,Se) on silicon

DOEpatents

Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

2016-03-15

Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Qiye; Kim, Honggyu; Zhang, Runyu

2015-12-14

Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fullymore » relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.« less

Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Qiye; Kim, Honggyu; Zhang, Runyu

2015-12-14

Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to bemore » nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.« less

Microstructures and Microhardness Properties of CMSX-4® Additively Fabricated Through Scanning Laser Epitaxy (SLE)

NASA Astrophysics Data System (ADS)

Basak, Amrita; Holenarasipura Raghu, Shashank; Das, Suman

2017-12-01

Epitaxial CMSX-4® deposition is achieved on CMSX-4® substrates through the scanning laser epitaxy (SLE) process. A thorough analysis is performed using various advanced material characterization techniques, namely high-resolution optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, x-ray diffraction, and Vickers microhardness measurements, to characterize and compare the quality of the SLE-fabricated CMSX-4® deposits to the CMSX-4® substrates. The results show that the CMSX-4® deposits have smaller primary dendritic arm spacing, finer γ/ γ' size, weaker elemental segregation, and higher microhardness compared to the investment cast CMSX-4® substrates. The results presented here demonstrate that CMSX-4® is an attractive material for laser-based AM processing and, therefore, can be used in the fabrication of gas turbine hot-section components through AM processing.

Epitaxial Garnets and Hexagonal Ferrites.

DTIC Science & Technology

1982-04-20

goenv.o -,y la)ers were YIG (yttrium iron garnet ) films grown by liquid phase epitaxy w:* ( LPE ) on gadolinium gallium garnet (GGG) substrates. Magnetic...containing three epitaxial layers. In addition to the MSW work oil garnets , LPE of lithium ferrite and hexagonal fertites was studied. A substituted lead...of a stripline. The other layers are epitaxial films , generally YIG (yttrium iron garnet ) with magnetic properties adjusted by suitable modifications

Formation of atomically smooth epitaxial metal films on a chemically reactive interface: Mg on Si(111)

NASA Astrophysics Data System (ADS)

Özer, Mustafa M.; Weitering, Hanno H.

2013-07-01

Deposition of Mg on Si(111)7 × 7 produces an epitaxial magnesium silicide layer. Under identical annealing conditions, the thickness of this Mg2Si(111) layer increases with deposition amount, reaching a maximum of 4 monolayer (ML) and decreasing to ˜3 ML at higher Mg coverage. Excess Mg coalesces into atomically flat, crystalline Mg(0001) films. This surprising growth mode can be attributed to the accidental commensurability of the Mg(0001), Si(111), and Mg2Si(111) interlayer spacing and the concurrent minimization of in-plane Si mass transfer and domain-wall energies. The commensurability of the interlayer spacing defines a highly unique solid-phase epitaxial growth process capable of producing trilayer structures with atomically abrupt interfaces and atomically smooth surface morphologies.

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

NASA Astrophysics Data System (ADS)

Jiang, Jun; Bai, Zi Long; Chen, Zhi Hui; He, Long; Zhang, David Wei; Zhang, Qing Hua; Shi, Jin An; Park, Min Hyuk; Scott, James F.; Hwang, Cheol Seong; Jiang, An Quan

2018-01-01

Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.

Method of depositing epitaxial layers on a substrate

DOEpatents

Goyal, Amit

2003-12-30

An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Novel Chiral Magnetic Domain Wall Structure in Fe/Ni/Cu(001) Films

NASA Astrophysics Data System (ADS)

Chen, G.; Zhu, J.; Quesada, A.; Li, J.; N'Diaye, A. T.; Huo, Y.; Ma, T. P.; Chen, Y.; Kwon, H. Y.; Won, C.; Qiu, Z. Q.; Schmid, A. K.; Wu, Y. Z.

2013-04-01

Using spin-polarized low energy electron microscopy, we discovered a new type of domain wall structure in perpendicularly magnetized Fe/Ni bilayers grown epitaxially on Cu(100). Specifically, we observed unexpected Néel-type walls with fixed chirality in the magnetic stripe phase. Furthermore, we find that the chirality of the domain walls is determined by the film growth order with the chirality being right handed in Fe/Ni bilayers and left handed in Ni/Fe bilayers, suggesting that the underlying mechanism is the Dzyaloshinskii-Moriya interaction at the film interfaces. Our observations may open a new route to control chiral spin structures using interfacial engineering in transition metal heterostructures.

Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Idigoras, O., E-mail: o.idigoras@nanogune.eu; Suszka, A. K.; Berger, A.

2014-02-28

This work studies the influence of crystallographic alignment onto magnetization reversal in partially epitaxial Co films. A reproducible growth sequence was devised that allows for the continuous tuning of grain orientation disorder in Co films with uniaxial in-plane anisotropy by the controlled partial suppression of epitaxy. While all stable or meta-stable magnetization states occurring during a magnetic field cycle exhibit a uniform magnetization for fully epitaxial samples, non-uniform states appear for samples with sufficiently high grain orientation disorder. Simultaneously with the occurrence of stable domain states during the magnetization reversal, we observe a qualitative change of the applied field anglemore » dependence of the coercive field. Upon increasing the grain orientation disorder, we observe a disappearance of transient domain wall propagation as the dominating reversal process, which is characterized by an increase of the coercive field for applied field angles away from the easy axis for well-ordered epitaxial samples. Upon reaching a certain disorder threshold level, we also find an anomalous magnetization reversal, which is characterized by a non-monotonic behavior of the remanent magnetization and coercive field as a function of the applied field angle in the vicinity of the nominal hard axis. This anomaly is a collective reversal mode that is caused by disorder-induced frustration and it can be qualitatively and even quantitatively explained by means of a two Stoner-Wohlfarth particle model. Its predictions are furthermore corroborated by Kerr microscopy and by Brillouin light scattering measurements.« less

Functional Epitaxial Oxide Devices

DTIC Science & Technology

2010-04-12

complex oxides , epitaxial growth, antennas, varactors 16. SECURITY CLASSIFICATION OF: REPORT U b. ABSTRACT u c. THIS PAGE u 17. LIMITATION OF...Technical Report DATES COVERED (From - To) 17-06-2008-31-12-2009 4. TITLE AND SUBTITLE Functional Epitaxial Oxide Devices 5a. CONTRACT NUMBER NA...This research effort addresses the need for high performance radio frequency (RF) components, specifically varactors and miniaturized, high gain

Field-Polarity-Dependent Domain Growth in Epitaxial BaTiO 3 Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roth, Robert; Guo, Er-Jia; Rafique, Mohsin

The growth of circular tip-induced domains has been studied in epitaxial BaTiO 3 (BTO) films as a function of writing voltage and time using piezoresponse force microscopy (PFM). While abundant for Pb(Zr,Ti)O 3 (PZT) films, such studies are rare for BTO. Strong relaxation of written domains is observed in the form of reduction of the PFM amplitude inside the area of written domains which occurs additionally to a decrease of the domain radius. The domain wall velocity observed for negative tip voltage is systematically smaller than that for positive tip voltage. Based on maps of the positive and negative switchingmore » fields, the effective driving field for both polarities has been estimated. The polarity-dependent effective field cannot account for the different velocities, indicating a polarity-dependent mobility of the domain walls.« less

Field-Polarity-Dependent Domain Growth in Epitaxial BaTiO 3 Films

DOE PAGES

Roth, Robert; Guo, Er-Jia; Rafique, Mohsin; ...

2018-03-23

The growth of circular tip-induced domains has been studied in epitaxial BaTiO 3 (BTO) films as a function of writing voltage and time using piezoresponse force microscopy (PFM). While abundant for Pb(Zr,Ti)O 3 (PZT) films, such studies are rare for BTO. Strong relaxation of written domains is observed in the form of reduction of the PFM amplitude inside the area of written domains which occurs additionally to a decrease of the domain radius. The domain wall velocity observed for negative tip voltage is systematically smaller than that for positive tip voltage. Based on maps of the positive and negative switchingmore » fields, the effective driving field for both polarities has been estimated. The polarity-dependent effective field cannot account for the different velocities, indicating a polarity-dependent mobility of the domain walls.« less

Epitaxy of semiconductor-superconductor nanowires

NASA Astrophysics Data System (ADS)

Krogstrup, P.; Ziino, N. L. B.; Chang, W.; Albrecht, S. M.; Madsen, M. H.; Johnson, E.; Nygård, J.; Marcus, C. M.; Jespersen, T. S.

2015-04-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures.

5. UNIT VENTILATOR, MEN'S BATH HALL, SHOWING POSITION AGAINST WALL ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

5. UNIT VENTILATOR, MEN'S BATH HALL, SHOWING POSITION AGAINST WALL ABOVE THE BATHS. - Hot Springs National Park, Bathhouse Row, Ozark Bathhouse: Mechanical & Piping Systems, State Highway 7, 1 mile north of U.S. Highway 70, Hot Springs, Garland County, AR

Investigation on the electron flux to the wall in the VENUS ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thuillier, T.; Angot, J.; Benitez, J. Y.

The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. Here, a burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines aremore » presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.« less

Investigation on the electron flux to the wall in the VENUS ion source

DOE PAGES

Thuillier, T.; Angot, J.; Benitez, J. Y.; ...

2015-12-01

The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. Here, a burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines aremore » presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.« less

Investigation on the electron flux to the wall in the VENUS ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thuillier, T., E-mail: thuillier@lpsc.in2p3.fr; Angot, J.; Benitez, J. Y.

The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented.more » The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.« less

Investigation on the electron flux to the wall in the VENUS ion source

NASA Astrophysics Data System (ADS)

Thuillier, T.; Angot, J.; Benitez, J. Y.; Hodgkinson, A.; Lyneis, C. M.; Todd, D. S.; Xie, D. Z.

2016-02-01

The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.

Wall Shear Stress, Wall Pressure and Near Wall Velocity Field Relationships in a Whirling Annular Seal

NASA Technical Reports Server (NTRS)

Morrison, Gerald L.; Winslow, Robert B.; Thames, H. Davis, III

1996-01-01

The mean and phase averaged pressure and wall shear stress distributions were measured on the stator wall of a 50% eccentric annular seal which was whirling in a circular orbit at the same speed as the shaft rotation. The shear stresses were measured using flush mounted hot-film probes. Four different operating conditions were considered consisting of Reynolds numbers of 12,000 and 24,000 and Taylor numbers of 3,300 and 6,600. At each of the operating conditions the axial distribution (from Z/L = -0.2 to 1.2) of the mean pressure, shear stress magnitude, and shear stress direction on the stator wall were measured. Also measured were the phase averaged pressure and shear stress. These data were combined to calculate the force distributions along the seal length. Integration of the force distributions result in the net forces and moments generated by the pressure and shear stresses. The flow field inside the seal operating at a Reynolds number of 24,000 and a Taylor number of 6,600 has been measured using a 3-D laser Doppler anemometer system. Phase averaged wall pressure and wall shear stress are presented along with phase averaged mean velocity and turbulence kinetic energy distributions located 0.16c from the stator wall where c is the seal clearance. The relationships between the velocity, turbulence, wall pressure and wall shear stress are very complex and do not follow simple bulk flow predictions.

Epitaxial Electrodeposition of Methylammonium Lead Iodide Perovskites

DOE PAGES

Koza, Jakub A.; Hill, James C.; Demster, Ashley C.; ...

2015-12-16

Here, an electrochemical/chemical route is introduced to deposit both textured and epitaxial films of methylammonium lead iodide (MAPbI 3) perovskites. The perovskite films are produced by chemical conversion of lead dioxide films that have been electrodeposited as either textured or epitaxial films onto [111]-textured Au and [100] and [111] single-crystal Au substrates. The epitaxial relationships for the MAPbI 3 films are MAPbI 3(001)[010]∥PbO 2(100)<001> and MAPbI 3(110)[111]∥PbO 2(100)<001> regardless of the Au substrate orientation, because the in-plane order of the converted film is controlled by the epitaxial PbO 2 precursor film. The textured and epitaxial MAPbI 3 films both havemore » trap densities lower than and photoluminescence intensities higher than those of polycrystalline films produced by spin coating.« less

Hot air impingement on a flat plate using Large Eddy Simulation (LES) technique

NASA Astrophysics Data System (ADS)

Plengsa-ard, C.; Kaewbumrung, M.

2018-01-01

Impinging hot gas jets to a flat plate generate very high heat transfer coefficients in the impingement zone. The magnitude of heat transfer prediction near the stagnation point is important and accurate heat flux distribution are needed. This research studies on heat transfer and flow field resulting from a single hot air impinging wall. The simulation is carried out using computational fluid dynamics (CFD) commercial code FLUENT. Large Eddy Simulation (LES) approach with a subgrid-scale Smagorinsky-Lilly model is present. The classical Werner-Wengle wall model is used to compute the predicted results of velocity and temperature near walls. The Smagorinsky constant in the turbulence model is set to 0.1 and is kept constant throughout the investigation. The hot gas jet impingement on the flat plate with a constant surface temperature is chosen to validate the predicted heat flux results with experimental data. The jet Reynolds number is equal to 20,000 and a fixed jet-to-plate spacing of H/D = 2.0. Nusselt number on the impingement surface is calculated. As predicted by the wall model, the instantaneous computed Nusselt number agree fairly well with experimental data. The largest values of calculated Nusselt number are near the stagnation point and decrease monotonically in the wall jet region. Also, the contour plots of instantaneous values of wall heat flux on a flat plate are captured by LES simulation.

Electroless epitaxial etching for semiconductor applications

DOEpatents

McCarthy, Anthony M.

2002-01-01

A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Epitaxial CoSi2 on MOS devices

DOEpatents

Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

2005-01-25

An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

Turbulent Boundary Layer Drag Reduction by Spanwise Wall Oscillation

NASA Astrophysics Data System (ADS)

Trujillo, S. M.; Bogard, D. G.; Ball, K. S.

1997-11-01

Changes in turbulence structure were investigated in a turbulent water boundary layer flow for which wall shear had been reduced 25 percent by spanwise wall oscillations. LDV and hot film measurements were made of streamwise and wall-normal velocities. For all wall oscillations examined, drag reduction was found to scale best with the peak velocity of the wall oscillation. Burst and sweep strength and duration were all reduced by the wall oscillation, with the greatest effects seen for the strongest events. The pdf of the velocity in the near-wall region showed greatly increased periods of low velocities, but little change was observed in the streamwise velocity autocorrelation.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Experimental study on the monomer structure of solar semiconductor cold wall

NASA Astrophysics Data System (ADS)

Fu, Yuanyuan; Liu, Qiuxin; Chen, Tianshou

2018-06-01

In this paper, solar semiconductor cold wall structure was adopted in the net-zero energy buildings, NZEB for short. The heat transfer and refrigeration effect of the monomer structure of semiconductor cold wall were tested, we get that the monomer structure of semiconductor cold wall has certain cooling effect. However, the heat exchange effect is not good of the cold and hot aluminum plate only through natural convection and radiation heat transfer. It is necessary to further study the process of semiconductor refrigeration and heat transfer and the factors that affect the cooling effect. At the same time, it put forward a series of suggestions and improvement opinion for NZEB in hot summer and cold winter areas.

Reynolds number invariance of the structure inclination angle in wall turbulence.

PubMed

Marusic, Ivan; Heuer, Weston D C

2007-09-14

Cross correlations of the fluctuating wall-shear stress and the streamwise velocity in the logarithmic region of turbulent boundary layers are reported over 3 orders of magnitude change in Reynolds number. These results are obtained using hot-film and hot-wire anemometry in a wind tunnel facility, and sonic anemometers and a purpose-built wall-shear stress sensor in the near-neutral atmospheric surface layer on the salt flats of Utah's western desert. The direct measurement of fluctuating wall-shear stress in the atmospheric surface layer has not been available before. Structure inclination angles are inferred from the cross correlation results and are found to be invariant over the large range of Reynolds number. The findings justify the prior use of low Reynolds number experiments for obtaining structure angles for near-wall models in the large-eddy simulation of atmospheric surface layer flows.

Electromigration in epitaxial Cu(001) lines

NASA Astrophysics Data System (ADS)

Ramanath, G.; Kim, H.; Goindi, H. S.; Frederick, M. J.; Shin, C.-S.; Goswami, R.; Petrov, I.; Greene, J. E.

2002-04-01

We report the electromigration (EM) response of single-domain epitaxial Cu(001) lines on layers of Ta, TaN, and TiN. Epitaxial Cu(001) lines on nitride layers exhibit nearly two orders of magnitude higher mean-time-to-failure (MTTF) values than those on Ta, indicating the strong influence of the underlayer. The activation energy of EM for Cu on the nitrides is ˜0.8-1.2 eV, and that of Cu on Ta is ˜0.2 eV, for 200-300 °C. Our results also indicate that the MTTF values correlate inversely to the crystal quality of the Cu layers measured by X-ray diffraction. The EM resistance of epitaxial Cu lines with different crystal quality on TaN were measured to separate the effects of interface chemistry and crystal quality. While higher quality epitaxial films reveal a higher EM resistance, the magnitude of the change is smaller than that obtained by changing the interface chemistry. Epitaxial lines exhibit more than 3-4 orders of magnitude higher MTTF than polycrystalline lines on the same underlayer. Based upon our results, we propose that the Cu/underlayer interface chemistry and presence of grain boundary diffusion play important roles in unpassivated Cu films.

Epitaxial gallium arsenide wafers

NASA Technical Reports Server (NTRS)

Black, J. F.; Robinson, L. B.

1971-01-01

The preparation of GaAs epitaxial layers by a vapor transport process using AsCl3, Ga and H2 was pursued to provide epitaxial wafers suitable for the fabrication of transferred electron oscillators and amplifiers operating in the subcritical region. Both n-n(+) structures, and n(++)-n-n(+) sandwich structures were grown using n(+) (Si-doped) GaAs substrates. Process variables such as the input AsCl3 concentration, gallium temperature, and substrate temperature and temperature gradient and their effects on properties are presented and discussed.

Hot piston ring tests

NASA Technical Reports Server (NTRS)

Allen, David J.; Tomazic, William A.

1987-01-01

As part of the DOE/NASA Automotive Stirling Engine Project, tests were made at NASA Lewis Research Center to determine whether appendix gap losses could be reduced and Stirling engine performance increased by installing an additional piston ring near the top of each piston dome. An MTI-designed upgraded Mod I Automotive Stirling Engine was used. Unlike the conventional rings at the bottom of the piston, these hot rings operated in a high temperature environment (700 C). They were made of a high temperature alloy (Stellite 6B) and a high temperature solid lubricant coating (NASA Lewis-developed PS-200) was applied to the cylinder walls. Engine tests were run at 5, 10, and 15 MPa operating pressure over a range of operating speeds. Tests were run both with hot rings and without to provide a baseline for comparison. Minimum data to assess the potential of both the hot rings and high temperature low friction coating was obtained. Results indicated a slight increase in power and efficiency, an increase over and above the friction loss introduced by the hot rings. Seal leakage measurements showed a significant reduction. Wear on both rings and coating was low.

Epitaxial Garnet Investigation; Technical Report, Foreign Travel

DTIC Science & Technology

1988-10-25

Pure yttrium iron garnet (YIG) films are grown on GGG substrates by * liquid phase epitaxy ( LPE ) in production lots. In addition, one or two...epitaxial garnet films for Philips Dr. Krumme * Dr. Doormann 3-6-87 Thomson - CSF Research Center, Orsay, France Dr. J. P. Castera Dr. P. L. Meunier all...research physicists who grow, characterize, Dr. J. Y. Beguin or use epitaxial garnet films for Thomson CSF. Dr. J. L. Rolland Dr. P. Friez The

One-step Ge/Si epitaxial growth.

PubMed

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Epitaxial thinning process

NASA Technical Reports Server (NTRS)

Siegel, C. M. (Inventor)

1984-01-01

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

An experimental study of near wall flow parameters in the blade end-wall corner region

NASA Technical Reports Server (NTRS)

Bhargava, Rakesh K.; Raj, Rishi S.

1989-01-01

The near wall flow parameters in the blade end-wall corner region is investigated. The blade end-wall corner region was simulated by mounting an airfoil section (NACA 65-015 base profile) symmetric blades on both sides of the flat plate with semi-circular leading edge. The initial 7 cm from the leading edge of the flat plate was roughened by gluing No. 4 floor sanding paper to artificially increase the boundary layer thickness on the flat plate. The initial flow conditions of the boundary layer upstream of the corner region are expected to dictate the behavior of flow inside the corner region. Therefore, an experimental investigation was extended to study the combined effect of initial roughness and increased level of free stream turbulence on the development of a 2-D turbulent boundary layer in the absence of the blade. The measurement techniques employed in the present investigation included, the conventional pitot and pitot-static probes, wall taps, the Preston tube, piezoresistive transducer and the normal sensor hot-wire probe. The pitot and pitot-static probes were used to obtain mean velocity profile measurements within the boundary layer. The measurements of mean surface static pressure were obtained with the surface static tube and the conventional wall tap method. The wall shear vector measurements were made with a specially constructed Preston tube. The flush mounted piezoresistive type pressure transducer were employed to measure the wall pressure fluctuation field. The velocity fluctuation measurements, used in obtaining the wall pressure-velocity correlation data, were made with normal single sensor hot-wire probe. At different streamwise stations, in the blade end-wall corner region, the mean values of surface static pressure varied more on the end-wall surface in the corner region were mainly caused by the changes in the curvature of the streamlines. The magnitude of the wall shear stress in the blade end-wall corner region increased significantly

Low temperature laser molecular beam epitaxy and characterization of AlGaN epitaxial layers

NASA Astrophysics Data System (ADS)

Tyagi, Prashant; Ch., Ramesh; Kushvaha, S. S.; Kumar, M. Senthil

2017-05-01

We have grown AlGaN (0001) epitaxial layers on sapphire (0001) by using laser molecular beam epitaxy (LMBE) technique. The growth was carried out using laser ablation of AlxGa1-x liquid metal alloy under r.f. nitrogen plasma ambient. Before epilayer growth, the sapphire nitradation was performed at 700 °C using r.f nitrogen plasma followed by AlGaN layer growth. The in-situ reflection high energy electron diffraction (RHEED) was employed to monitor the substrate nitridation and AlGaN epitaxial growth. High resolution x-ray diffraction showed wurtzite hexagonal growth of AlGaN layer along c-axis. An absorption bandgap of 3.97 eV is obtained for the grown AlGaN layer indicating an Al composition of more than 20 %. Using ellipsometry, a refractive index (n) value of about 2.19 is obtained in the visible region.

Ordered arrays of multiferroic epitaxial nanostructures.

PubMed

Vrejoiu, Ionela; Morelli, Alessio; Biggemann, Daniel; Pippel, Eckhard

2011-01-01

Epitaxial heterostructures combining ferroelectric (FE) and ferromagnetic (FiM) oxides are a possible route to explore coupling mechanisms between the two independent order parameters, polarization and magnetization of the component phases. We report on the fabrication and properties of arrays of hybrid epitaxial nanostructures of FiM NiFe(2)O(4) (NFO) and FE PbZr(0.52)Ti(0.48)O(3) or PbZr(0.2)Ti(0.8)O(3), with large range order and lateral dimensions from 200 nm to 1 micron. The structures were fabricated by pulsed-laser deposition. High resolution transmission electron microscopy and high angle annular dark-field scanning transmission electron microscopy were employed to investigate the microstructure and the epitaxial growth of the structures. Room temperature ferroelectric and ferrimagnetic domains of the heterostructures were imaged by piezoresponse force microscopy (PFM) and magnetic force microscopy (MFM), respectively. PFM and MFM investigations proved that the hybrid epitaxial nanostructures show ferroelectric and magnetic order at room temperature. Dielectric effects occurring after repeated switching of the polarization in large planar capacitors, comprising ferrimagnetic NiFe2O4 dots embedded in ferroelectric PbZr0.52Ti0.48O3 matrix, were studied. These hybrid multiferroic structures with clean and well defined epitaxial interfaces hold promise for reliable investigations of magnetoelectric coupling between the ferrimagnetic / magnetostrictive and ferroelectric / piezoelectric phases.

Strained-layer epitaxy of germanium-silicon alloys

NASA Astrophysics Data System (ADS)

Bean, J. C.

1985-10-01

Strained-layer epitaxy is presented as a developing technique for combining Si with other materials in order to obtain semiconductors with enhanced electronic properties. The method involves applying layers sufficiently thin so that the atoms deposited match the bonding configurations of the substrate crystal. When deposited on Si, a four-fold bonding pattern is retained, with a lowered interfacial energy and augmented stored strain energy in the epitaxial layer. The main problem which remains is building an epitaxial layer thick enough to yield desired epitaxial properties while avoiding a reversion to an unstrained structure. The application of a Ge layer to Si using MBE is described, along with the formation of heterojunction multi-layer superlattices, which can reduce the dislocation effects in some homojunctions. The technique shows promise for developing materials of use as bipolar transistors, optical detectors and fiber optic transmission devices.

Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

PubMed

Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

2008-07-11

Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

Radioactive hot cell access hole decontamination machine

DOEpatents

Simpson, William E.

1982-01-01

Radioactive hot cell access hole decontamination machine. A mobile housing has an opening large enough to encircle the access hole and has a shielding door, with a door opening and closing mechanism, for uncovering and covering the opening. The housing contains a shaft which has an apparatus for rotating the shaft and a device for independently translating the shaft from the housing through the opening and access hole into the hot cell chamber. A properly sized cylindrical pig containing wire brushes and cloth or other disks, with an arrangement for releasably attaching it to the end of the shaft, circumferentially cleans the access hole wall of radioactive contamination and thereafter detaches from the shaft to fall into the hot cell chamber.

Silicon spikes and impurity accumulation at interrupted growth interfaces during molecular-beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

SpringThorpe, A.J.; Moore, W.T.; Majeed, A.

1993-07-01

Recent proposals by Wood and Wilson, to explain the formation of impurity spikes at substrate/epitaxial layer interfaces in GaAs prepared by molecular-beam epitaxy (MBE), have been experimentally investigated. Their suggestion that the spikes form due to suboxide transport via reactions that involve the As{sub 2}O{sub 3} released from the substrate during oxide desorption and hot Knudsen cells, is not supported by the experimental data. The same authors have also speculated that there may be significant flux leakage from nominally closed cells. For this to occur, reflection and scattering of flux by inadequately cooled cryoshroud baffle surfaces are necessary. Secondary ionmore » mass spectrometry analyses of interfaces, at which the growth of GaAs and AlAs was interrupted for times up to 30 min, confirm that this takes place. However, flux leakage is only found to be significant for the high vapor pressure group III elements. For these elements, incorporation levels in the range 0.02%-0.1% are found under normal deposition conditions. These results suggest that careful attention should be given to increasing the internal MBE system baffling in order to eliminate cross contamination problems. 14 refs., 2 figs., 1 tab.« less

Modeling of Fuel Film Cooling on Chamber Hot Wall

DTIC Science & Technology

2013-12-01

flow at supercritical pressure. The fuel jet and the cross-flow interact. Some part of the jet is stripped off and entrained by the hot gas...modelers. The supercritical pressure makes information on equation of state and transport properties hard to come by. The large temperature range...the modeling of hydrocarbon fuel film cooling at supercritical pressures. A relevant recent simulation study by Yang and Sun [1] used a finite-rate

GaN/NbN epitaxial semiconductor/superconductor heterostructures

NASA Astrophysics Data System (ADS)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

GaN/NbN epitaxial semiconductor/superconductor heterostructures.

PubMed

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D Scott; Nepal, Neeraj; Downey, Brian P; Muller, David A; Xing, Huili G; Meyer, David J; Jena, Debdeep

2018-03-07

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor-an electronic gain element-to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance-a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Epitaxial Garnets and Hexagonal Ferrites.

DTIC Science & Technology

1983-12-01

operating at frequencies between 1 GHz and 25 GHz. 2. Investigate LPE growth of lithium ferrite with the objective of preparing low-loss, large area films ...and hexagonal ferrites when the series of contracts began in 1975. At that time the liquid phase epitaxy method for growth of magnetic garnet films ...principal interest in epitaxial garnets was for magnetic bubble memories. For this Uapplication the films had to be about 3pm thick with low defect density

Epitaxial Garnets and Hexagonal Ferrites.

DTIC Science & Technology

1980-02-28

shaped LPE garnet samples with 31.5um film thickness. We were informed that initial evalu- ation showed acceptably low insertion loss and that the material...frequencies above 25 GHz. c. Furnish up to eight (8) liquid phase epitaxy yttrium iron garnet films to RADC/EEA for testing and evaluation. These tasks...a "Method for Controlling Resonance Frequency of Yttrium Iron Garnet Films ." A patent, "Epitaxial Growth of M-type Hexagonal Ferrite Films on Spinel

Effect of spin transfer torque on domain wall motion regimes in [Co/Ni] superlattice wires

NASA Astrophysics Data System (ADS)

Le Gall, S.; Vernier, N.; Montaigne, F.; Thiaville, A.; Sampaio, J.; Ravelosona, D.; Mangin, S.; Andrieu, S.; Hauet, T.

2017-05-01

The combined effect of magnetic field and current on domain wall motion is investigated in epitaxial [Co/Ni] microwires. Both thermally activated and flow regimes are found to be strongly affected by current. All experimental data can be understood by taking into account both adiabatic and nonadiabatic components of the spin transfer torque, the parameters of which are extracted. In the precessional flow regime, it is shown that the domain wall can move in the electron flow direction against a strong applied field, as previously observed. In addition, for a large range of applied magnetic field and injected current, a stochastic domain wall displacement after each pulse is observed. Two-dimensional micromagnetic simulations, including some disorder, show a random fluctuation of the domain wall position that qualitatively matches the experimental results.

Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors

DTIC Science & Technology

2011-01-01

Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors MATTHEW REASON,1 BRIAN R. BENNETT,1,2 RICHARD MAGNO,1 and J. BRAD BOOS1 1...2010 to 00-00-2010 4. TITLE AND SUBTITLE Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors 5a. CONTRACT NUMBER 5b. GRANT...Prescribed by ANSI Std Z39-18 EXPERIMENTAL PROCEDURES The samples reported in this work were grown by solid-source molecular - beam epitaxy (MBE) with

Prototype solar-heated hot water systems and double-walled heat exchangers

NASA Technical Reports Server (NTRS)

1978-01-01

Development progress made on two solar-heated hot water systems and two heat exchangers is reported. The development, manufacture, installation, maintenance, problem resolution, and system evaluation are described.

Magnetization switching behavior with competing anisotropies in epitaxial Co3FeN /MnN exchange-coupled bilayers

NASA Astrophysics Data System (ADS)

Hajiri, T.; Yoshida, T.; Jaiswal, S.; Filianina, M.; Borie, B.; Ando, H.; Asano, H.; Zabel, H.; Kläui, M.

2016-11-01

We report unusual magnetization switching processes and angular-dependent exchange bias effects in fully epitaxial Co3FeN /MnN bilayers, where magnetocrystalline anisotropy and exchange coupling compete, probed by longitudinal and transverse magneto-optic Kerr effect (MOKE) magnetometry. The MOKE loops show multistep jumps corresponding to the nucleation and propagation of 90∘ domain walls in as-grown bilayers. By inducing exchange coupling, we confirm changes of the magnetization switching process due to the unidirectional anisotropy field of the exchange coupling. Taking into account the experimentally obtained values of the fourfold magnetocrystalline anisotropy, the unidirectional anisotropy field, the exchange-coupling constant, and the uniaxial anisotropy including its direction, the calculated angular-dependent exchange bias reproduces the experimental results. These results demonstrate the essential role of the competition between magnetocrystalline anisotropy and exchange coupling for understanding and tailoring exchange-coupling phenomena usable for engineering switching in fully epitaxial bilayers made of tailored materials.

High humidity hot air impingement blanching (HHAIB) enhances drying rate and softens texture of apricot via cell wall pectin polysaccharides degradation and ultrastructure modification.

PubMed

Deng, Li-Zhen; Mujumdar, A S; Yang, Xu-Hai; Wang, Jun; Zhang, Qian; Zheng, Zhi-An; Gao, Zhen-Jiang; Xiao, Hong-Wei

2018-09-30

The effects of high humidity hot air impingement blanching (HHAIB) over a range of application times (30, 60, 90, and 120 s) on drying characteristics, hardness, cell wall pectin fractions contents and nanostructure, as well ultrastructure of apricot were investigated. Results showed that HHAIB reduced drying time and decreased the hardness of apricot by 20.7%-34.5% and 46.57%-71.89%, respectively. The water-soluble pectin (WSP) contents increased after blanching, while the contents of chelate-soluble pectin (CSP) and sodium-carbonate-soluble pectin (NSP) decreased significantly (P < 0.05). The hardness and drying time were found to correlate inversely with the WSP content, but positively with CSP and NSP contents. Atomic force microscopy (AFM) detection showed the decomposition and degradation of pectin fractions during blanching. Additionally, transmission electron microscopy (TEM) observation indicated that the cell wall structure was degraded and middle lamella integrity was destroyed by blanching. Copyright © 2018 Elsevier Ltd. All rights reserved.

Multichannel temperature controller for hot air solar house

NASA Technical Reports Server (NTRS)

Currie, J. R.

1979-01-01

This paper describes an electronic controller that is optimized to operate a hot air solar system. Thermal information is obtained from copper constantan thermocouples and a wall-type thermostat. The signals from the thermocouples are processed through a single amplifier using a multiplexing scheme. The multiplexing reduces the component count and automatically calibrates the thermocouple amplifier. The processed signals connect to some simple logic that selects one of the four operating modes. This simple, inexpensive, and reliable scheme is well suited to control hot air solar systems.

Epitaxial solar-cell fabrication, phase 2

NASA Technical Reports Server (NTRS)

Daiello, R. V.; Robinson, P. H.; Kressel, H.

1977-01-01

Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

Epitaxial Graphene: A New Material for Electronics

NASA Astrophysics Data System (ADS)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

A&M. Hot liquid waste treatment building (TAN616). Camera facing southwest. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

A&M. Hot liquid waste treatment building (TAN-616). Camera facing southwest. Oblique view of east and north walls. Note three corrugated pipes at lower left indicating location of underground hot waste storage tanks. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-4 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

Heteroepitaxial Growth of Single-Walled Carbon Nanotubes from Boron Nitride

PubMed Central

Tang, Dai-Ming; Zhang, Li-Li; Liu, Chang; Yin, Li-Chang; Hou, Peng-Xiang; Jiang, Hua; Zhu, Zhen; Li, Feng; Liu, Bilu; Kauppinen, Esko I.; Cheng, Hui-Ming

2012-01-01

The growth of single-walled carbon nanotubes (SWCNTs) with predefined structure is of great importance for both fundamental research and their practical applications. Traditionally, SWCNTs are grown from a metal catalyst with a vapor-liquid-solid mechanism, where the catalyst is in liquid state with fluctuating structures, and it is intrinsically unfavorable for the structure control of SWCNTs. Here we report the heteroepitaxial growth of SWCNTs from a platelet boron nitride nanofiber (BNNF), which is composed of stacked (002) planes and is stable at high temperatures. SWCNTs are found to grow epitaxially from the open (002) edges of the BNNFs, and the diameters of the SWCNTs are multiples of the BN (002) interplanar distance. In situ transmission electron microscopy observations coupled with first principles calculations reveal that the growth of SWCNTs from the BNNFs follows a vapor-solid-solid mechanism. Our work opens opportunities for the control over the structure of SWCNTs by hetero-crystallographic epitaxy. PMID:23240076

Electrical properties of solid-solution SrZrxTi1-xO3 grown epitaxially on Ge by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Moghadam, Reza; Ahmadi, Kamyar; Xiao, Z.-Y.; Hong, Xia; Ngai, Joseph

The epitaxial growth of crystalline oxides on semiconductors enables new functionalities to be introduced to semiconductor devices. In particular, dielectric and ferroelectric oxides grown epitaxially on semiconductors provide a pathway to realize ultra-low power logic and memory devices. Here we present electrical characterization of solid-solution SrZrxTi1-xO3 grown epitaxially on Ge through oxide molecular beam epitaxy. SrZrxTi1-xO3 is of particular interest since the band offset with respect to the semiconductor can be tuned through Zr content x. We will present current-voltage, capacitance-voltage and piezoforce microscopy characterization of SrZrxTi1-xO3 -Ge heterojunctions. In particular, we will discuss how the electrical characteristics of SrZrxTi1-xO3 -Ge heterojunctions evolve with respect to composition, annealing and film thickness.

MHD Electrode and wall constructions

DOEpatents

Way, Stewart; Lempert, Joseph

1984-01-01

Electrode and wall constructions for the walls of a channel transmitting the hot plasma in a magnetohydrodynamic generator. The electrodes and walls are made of a plurality of similar modules which are spaced from one another along the channel. The electrodes can be metallic or ceramic, and each module includes one or more electrodes which are exposed to the plasma and a metallic cooling bar which is spaced from the plasma and which has passages through which a cooling fluid flows to remove heat transmitted from the electrode to the cooling bar. Each electrode module is spaced from and electrically insulated from each adjacent module while interconnected by the cooling fluid which serially flows among selected modules. A wall module includes an electrically insulating ceramic body exposed to the plasma and affixed, preferably by mechanical clips or by brazing, to a metallic cooling bar spaced from the plasma and having cooling fluid passages. Each wall module is, similar to the electrode modules, electrically insulated from the adjacent modules and serially interconnected to other modules by the cooling fluid.

Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

DOE PAGES

Yu, Yifei; Hu, Shi; Su, Liqin; ...

2014-12-03

Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

Complex oxide ferroelectrics: Electrostatic doping by domain walls

DOE PAGES

Maksymovych, Petro

2015-06-19

Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO 3 and SrTiO 3 supports a 2D electron gas1 with high mobility of >1,000 cm 2 V -1 s -1 (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). Ifmore » the direction of atomic displacements changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO 3 down to the nanoscale.« less

A&M. Hot liquid waste treatment building (TAN616). Contextual view, facing ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

A&M. Hot liquid waste treatment building (TAN-616). Contextual view, facing south. Wall of hot shop (TAN-607) with high bay at left of view. Lower-roofed building at left edge of view is TAN- 633, hot cell annex. Complex at center of view is TAN-616. Tall metal building with gable roof is TAN-615. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-2-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

Numerical investigation of supersonic turbulent boundary layers with high wall temperature

NASA Technical Reports Server (NTRS)

Guo, Y.; Adams, N. A.

1994-01-01

A direct numerical approach has been developed to simulate supersonic turbulent boundary layers. The mean flow quantities are obtained by solving the parabolized Reynolds-averaged Navier-Stokes equations (globally). Fluctuating quantities are computed locally with a temporal direct numerical simulation approach, in which nonparallel effects of boundary layers are partially modeled. Preliminary numerical results obtained at the free-stream Mach numbers 3, 4.5, and 6 with hot-wall conditions are presented. Approximately 5 million grid points are used in all three cases. The numerical results indicate that compressibility effects on turbulent kinetic energy, in terms of dilatational dissipation and pressure-dilatation correlation, are small. Due to the hot-wall conditions the results show significant low Reynolds number effects and large streamwise streaks. Further simulations with a bigger computational box or a cold-wall condition are desirable.

Near-wall turbulence alteration through thin streamwise riblets

NASA Technical Reports Server (NTRS)

Wilkinson, Stephen P.; Lazos, Barry S.

1987-01-01

The possibility of improving the level of drag reduction associated with near-wall riblets is considered. The methodology involves the use of a hot-wire anemometer to study various surface geometries on small, easily constructed models. These models consist of small, adjacent rectangular channels on the wall aligned in the streamwise direction. The VITA technique is modified and applied to thin-element-array and smooth flat-plate data and the results are indicated schematically.

The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Watson, G.P.; Ast, D.G.; Anderson, T.J.

1993-09-01

In a previous report [G. P. Watson, D. G. Ast, T. J. Anderson, and Y. Hayakawa, Appl. Phys. Lett. [bold 58], 2517 (1991)] we demonstrated that the motion of misfit dislocations in InGaAs, grown by organometallic vapor phase epitaxy on patterned GaAs substrates, can be impeded even if the strained epitaxial layer is continuous. Trenches etched into GaAs before growth are known to act as a barrier to misfit dislocation propagation [E. A. Fitzgerald, G. P. Watson, R. E. Proano, D. G. Ast, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, J. Appl. Phys. [bold 65], 2220 (1989)]more » when those trenches create discontinuities in the epitaxial layers; but even shallow trenches, with continuous strained layers following the surface features, can act as barriers. By considering the strain energy required to change the length of the dislocation glide segments that stretch from the interface to the free surface, a simple model is developed that explains the major features of the unique blocking action observed at the trench edges. The trench wall angle is found to be an important parameter in determining whether or not a trench will block dislocation glide. The predicted blocking angles are consistent with observations made on continuous 300 and 600 nm thick In[sub 0.04]Ga[sub 0.96]As films on patterned GaAs. Based on the model, a structure is proposed that may be used as a filter to yield misfit dislocations with identical Burgers vectors or dislocations which slip in only one glide plane.« less

Superconducting cuprate heterostructures for hot electron bolometers

NASA Astrophysics Data System (ADS)

Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

2013-11-01

Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

Relating Nanoscale Accessibility within Plant Cell Walls to Improved Enzyme Hydrolysis Yields in Corn Stover Subjected to Diverse Pretreatments.

PubMed

Crowe, Jacob D; Zarger, Rachael A; Hodge, David B

2017-10-04

Simultaneous chemical modification and physical reorganization of plant cell walls via alkaline hydrogen peroxide or liquid hot water pretreatment can alter cell wall structural properties impacting nanoscale porosity. Nanoscale porosity was characterized using solute exclusion to assess accessible pore volumes, water retention value as a proxy for accessible water-cell walls surface area, and solute-induced cell wall swelling to measure cell wall rigidity. Key findings concluded that delignification by alkaline hydrogen peroxide pretreatment decreased cell wall rigidity and that the subsequent cell wall swelling resulted increased nanoscale porosity and improved enzyme binding and hydrolysis compared to limited swelling and increased accessible surface areas observed in liquid hot water pretreated biomass. The volume accessible to a 90 Å dextran probe within the cell wall was found to be correlated to both enzyme binding and glucose hydrolysis yields, indicating cell wall porosity is a key contributor to effective hydrolysis yields.

Lattice-Matched Epitaxial Graphene Grown on Boron Nitride.

PubMed

Davies, Andrew; Albar, Juan D; Summerfield, Alex; Thomas, James C; Cheng, Tin S; Korolkov, Vladimir V; Stapleton, Emily; Wrigley, James; Goodey, Nathan L; Mellor, Christopher J; Khlobystov, Andrei N; Watanabe, Kenji; Taniguchi, Takashi; Foxon, C Thomas; Eaves, Laurence; Novikov, Sergei V; Beton, Peter H

2018-01-10

Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band gap but requires the formation of highly strained material and has not hitherto been realized. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and coexists with a topologically modified moiré pattern with regions of strained graphene which have giant moiré periods up to ∼80 nm. Raman spectra reveal narrow red-shifted peaks due to isotropic strain, while the giant moiré patterns result in complex splitting of Raman peaks due to strain variations across the moiré unit cell. The lattice-matched graphene has a lower conductance than both the Frenkel-Kontorova-type domain walls and also the topological defects where they terminate. We relate these results to theoretical models of band gap formation in graphene/boron nitride heterostructures.

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

Optical effects induced by epitaxial tension in lead titanate

NASA Astrophysics Data System (ADS)

Dejneka, A.; Chvostova, D.; Pacherova, O.; Kocourek, T.; Jelinek, M.; Tyunina, M.

2018-01-01

Single-crystal-type epitaxial films of perovskite oxide ferroelectrics are attractive for integrated photonic applications because of the remarkable optical properties and effects in ferroelectrics. The properties of the films may be influenced by epitaxial strain arising from the film-substrate mismatch. Here, dramatic strain-induced changes of the absorption and refraction are experimentally detected by spectroscopic ellipsometry in epitaxial films of archetypical ferroelectric PbTiO3. Comparison of the properties of a tensile-strained film with those of reference films and crystals reveals that epitaxial tension produces blueshifts of the primary above-bandgap absorption peaks by 1 eV and a decrease in the refractive index by 0.5 in the transparent spectral range. The obtained quadratic electrooptic and effective elastooptic coefficients exceed the bulk values by orders of magnitude. The experimental observations prove that epitaxy is a powerful tool for engineering unprecedented optical properties that may enable future photonics innovations.

Deposition of hydrogenated silicon clusters for efficient epitaxial growth.

PubMed

Le, Ha-Linh Thi; Jardali, Fatme; Vach, Holger

2018-06-13

Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. However, the optimal experimental conditions and the underlying growth mechanisms leading to the high-speed epitaxial growth of thin silicon films from hydrogenated silicon nanoparticles remain far from being understood. In the present work, extensive molecular dynamics simulations were performed to study the epitaxial growth of silicon thin films resulting from the deposition of plasma-born hydrogenated silicon clusters at low substrate temperatures under realistic reactor conditions. There is strong evidence that a temporary phase transition of the substrate area around the cluster impact site to the liquid state is necessary for the epitaxial growth to take place. We predict further that a non-normal incidence angle for the cluster impact significantly facilitates the epitaxial growth of thin crystalline silicon films.

Vacancies in epitaxial graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davydov, S. Yu., E-mail: Sergei-Davydov@mail.ru

The coherent-potential method is used to consider the problem of the influence of a finite concentration of randomly arranged vacancies on the density of states of epitaxial graphene. To describe the density of states of the substrate, simple models (the Anderson model, Haldane-Anderson model, and parabolic model) are used. The electronic spectrum of free single-sheet graphene is considered in the low-energy approximation. Charge transfer in the graphene-substrate system is discussed. It is shown that, in all cases, the density of states of epitaxial graphene decreases proportionally to the vacancy concentration. At the same time, the average charge transferred from graphenemore » to the substrate increases.« less

CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CP640) LOOKING NORTHWEST ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CP-640) LOOKING NORTHWEST SHOWING FORMING AND PLACEMENT OF REINFORCING STEEL FOR SOUTH WALLS OF CELLS 1, 3, 4 AND 5 AND WEST WALL FOR CELLS 1 AND 2; CONSTRUCTION 13 PERCENT COMPLETE. INL PHOTO NUMBER NRTS 59-6436. J. Anderson, Photographer, 12/18/1959 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

HOT CELL BUILDING, TRA632, INTERIOR. WINDOWED ROOM IS OFFICE; NEXT ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

HOT CELL BUILDING, TRA-632, INTERIOR. WINDOWED ROOM IS OFFICE; NEXT DOOR WAS DARKROOM, AND THIRD DOOR LED TO ANOTHER OFFICE. ALL ARE ALONG NORTH WALL OF BUILDING (ETR EXTENSION OF 1958). CAMERA FACES NORTHEAST. PUMICE BLOCK WALLS. INL NEGATIVE NO. HD46-29-1. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

Current at domain walls, roughly speaking: nanoscales studies of disorder roughening and conduction

NASA Astrophysics Data System (ADS)

Paruch, Patrycja

2013-03-01

Domain walls in (multi)ferroic materials are the thin elastic interfaces separating regions with different orientations of magnetisation, electric polarisation, or spontaneous strain. Understanding their behaviour, and controlling domain size and stability, is key for their integration into applications, while fundamentally, domain walls provide an excellent model system in which the rich physics of disordered elastic interfaces can be accesses. In addition, domain walls can present novel properties, quite different from those of their parent materials, making them potentially useful as active components in future nano-devices. Here, we present our atomic force microscopy studies of ferroelectric domain walls in epitaxial Pb(Zr0.2Ti0.8)O3 and BiFeO3 thin films, in which we use piezorespose force microscopy to show unusual domain wall roughening behaviour, with very localised disorder regions in the sample leading to a complex, multi-affine scaling of the domain wall shape. We also show the effects of temperature, environmental conditions, and defects on switching dynamics and domain wall roughness. We combine these observations with parallel conductive-tip atomic force microscopy current measurements, which also show highly localised variations in conduction, and highlight the key role played by oxygen vacancies in the observed domain wall conduction.

Large-scale influences in near-wall turbulence.

PubMed

Hutchins, Nicholas; Marusic, Ivan

2007-03-15

Hot-wire data acquired in a high Reynolds number facility are used to illustrate the need for adequate scale separation when considering the coherent structure in wall-bounded turbulence. It is found that a large-scale motion in the log region becomes increasingly comparable in energy to the near-wall cycle as the Reynolds number increases. Through decomposition of fluctuating velocity signals, it is shown that this large-scale motion has a distinct modulating influence on the small-scale energy (akin to amplitude modulation). Reassessment of DNS data, in light of these results, shows similar trends, with the rate and intensity of production due to the near-wall cycle subject to a modulating influence from the largest-scale motions.

A&M. TAN607 third floor plan for hot shop. Crane control ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

A&M. TAN-607 third floor plan for hot shop. Crane control rooms and their shielding windows. Plenum. Wall rack for manipulators in hot shop. Ralph M. Parsons 902-3-ANP-607-A 103. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-00-693-106755 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

NASA Astrophysics Data System (ADS)

Kennedy, S. M.; Zheng, C. X.; Jesson, D. E.

2017-01-01

Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.

FDNS code to predict wall heat fluxes or wall temperatures in rocket nozzles

NASA Technical Reports Server (NTRS)

Karr, Gerald R.

1993-01-01

This report summarizes the findings on the NASA contract NAG8-212, Task No. 3. The overall project consists of three tasks, all of which have been successfully completed. In addition, some supporting supplemental work, not required by the contract, has been performed and is documented herein. Task 1 involved the modification of the wall functions in the code FDNS to use a Reynolds Analogy-based method. Task 2 involved the verification of the code against experimentally available data. The data chosen for comparison was from an experiment involving the injection of helium from a wall jet. Results obtained in completing this task also show the sensitivity of the FDNS code to unknown conditions at the injection slot. Task 3 required computation of the flow of hot exhaust gases through the P&W 40K subscale nozzle. Computations were performed both with and without film coolant injection. The FDNS program tends to overpredict heat fluxes, but, with suitable modeling of backside cooling, may give reasonable wall temperature predictions. For film cooling in the P&W 40K calorimeter subscale nozzle, the average wall temperature is reduced from 1750 R to about 1050 R by the film cooling. The average wall heat flux is reduced by a factor of three.

Performance of epitaxial back surface field cells

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr.; Baraona, C. R.; Swartz, C. K.

1973-01-01

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length.

Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatterjee, Abhishek, E-mail: cabhishek@rrcat.gov.in; Khamari, Shailesh K.; Kumar, R.

2015-01-12

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

Hot cell shield plug extraction apparatus

DOEpatents

Knapp, Philip A.; Manhart, Larry K.

1995-01-01

An apparatus is provided for moving shielding plugs into and out of holes in concrete shielding walls in hot cells for handling radioactive materials without the use of external moving equipment. The apparatus provides a means whereby a shield plug is extracted from its hole and then swung approximately 90 degrees out of the way so that the hole may be accessed. The apparatus uses hinges to slide the plug in and out and to rotate it out of the way, the hinge apparatus also supporting the weight of the plug in all positions, with the load of the plug being transferred to a vertical wall by means of a bolting arrangement.

Influence of wall roughness and thermal coductivity on turbulent natural convection

NASA Astrophysics Data System (ADS)

Orlandi, Paolo; Pirozzoli, Sergio; Bernardini, Matteo

2015-11-01

We study turbulent natural convection in enclosures with conjugate heat transfer. The simplest way to increase the heat transfer in this flow is through rough surfaces. In numerical simulations often constant temperatures are assigned on the walls, but this is an unrealistic condition in laboratory experiments. Therefore, in the DNS, to be of help to experimentalists, it is necessary to solve the heat conduction in the solid walls together with the turbulent flow between the hot and the cold walls. Here the cold wall, 0 . 5 h tick is smooth, and the hot wall has 2D and 3D rough elements of thickness 0 . 2 h above a solid layer 0 . 3 h tick. The simulation is performed in a bi-periodic domain 4 h wide. The Rayleigh number varies from 106 to 108. Two values of the thermal conductivity, one corresponding to copper and the other ten times higher were assumed. It has been found that the Nusselt number behaves as Nu = αRaγ , with α increasing with the solid conductivity and depending of the roughness shape. 3D elements produce a heat transfer greater than 2D elements. An imprinting of the flow structures on the thermal field inside the walls is observed. The one-dimensional spectra at the center, one decade wide, agree with those of forced isotropic turbulence.

Experimental Study of Ignition by Hot Spot in Internal Combustion Engines

NASA Technical Reports Server (NTRS)

Serruys, Max

1938-01-01

In order to carry out the contemplated study, it was first necessary to provide hot spots in the combustion chamber, which could be measured and whose temperature could be changed. It seemed difficult to realize both conditions working solely on the temperature of the cooling water in a way so as to produce hot spots on the cylinder wall capable of provoking autoignition. Moreover, in the majority of practical cases, autoignition is produced by the spark plug, one of the least cooled parts in the engine. The first procedure therefore did not resemble that which most generally occurs in actual engine operation. All of these considerations caused us to reproduce similar hot spots at the spark plugs. The hot spots produced were of two kinds and designated with the name of thermo-electric spark plug and of metallic hot spot.

Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

NASA Astrophysics Data System (ADS)

McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

1990-10-01

We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

NASA Technical Reports Server (NTRS)

Skuza, J. R.; Clavero, C.; Yang, K.; Wincheski, B.; Lukaszew, R. A.

2009-01-01

L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

Transient hot-film sensor response in a shock tube

NASA Technical Reports Server (NTRS)

Roberts, A. S., Jr.; Ortgies, K. R.; Gartenberg, E.

1989-01-01

Shock tube experiments were performed to determine the response of a hot-film sensor, mounted flush on the side wall of a shock tube, to unsteady flow behind a normal shock wave. The present experiments attempt to isolate the response of the anemometer due only to the change in convective heat transfer at the hot-film surface. The experiments, performed at low supersonic shock speeds in air, are described along with the data acquisition procedure. The change in convective heat transfer is deduced from the data and the results are compared with those from transient boundary layer theory and another set of experimental results. Finally, a transient local heat transfer coefficient is formulated for use as the forcing function in a hot-film sensor instrument model simulation.

Turbulent flame-wall interaction: a DNS study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jackie; Hawkes, Evatt R; Sankaran, Ramanan

2010-01-01

A turbulent flame-wall interaction (FWI) configuration is studied using three-dimensional direct numerical simulation (DNS) and detailed chemical kinetics. The simulations are used to investigate the effects of the wall turbulent boundary layer (i) on the structure of a hydrogen-air premixed flame, (ii) on its near-wall propagation characteristics and (iii) on the spatial and temporal patterns of the convective wall heat flux. Results show that the local flame thickness and propagation speed vary between the core flow and the boundary layer, resulting in a regime change from flamelet near the channel centreline to a thickened flame at the wall. This findingmore » has strong implications for the modelling of turbulent combustion using Reynolds-averaged Navier-Stokes or large-eddy simulation techniques. Moreover, the DNS results suggest that the near-wall coherent turbulent structures play an important role on the convective wall heat transfer by pushing the hot reactive zone towards the cold solid surface. At the wall, exothermic radical recombination reactions become important, and are responsible for approximately 70% of the overall heat release rate at the wall. Spectral analysis of the convective wall heat flux provides an unambiguous picture of its spatial and temporal patterns, previously unobserved, that is directly related to the spatial and temporal characteristic scalings of the coherent near-wall turbulent structures.« less

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demaurex, Bénédicte, E-mail: benedicte.demaurex@epfl.ch; Bartlome, Richard; Seif, Johannes P.

2014-08-07

Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only frommore » the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

DOE PAGES

Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; ...

2014-08-05

Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore » only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

van der Waals epitaxy of Ge films on mica

NASA Astrophysics Data System (ADS)

Littlejohn, A. J.; Xiang, Y.; Rauch, E.; Lu, T.-M.; Wang, G.-C.

2017-11-01

To date, many materials have been successfully grown on substrates through van der Waals epitaxy without adhering to the constraint of lattice matching as is required for traditional chemical epitaxy. However, for elemental semiconductors such as Ge, this has been challenging and therefore it has not been achieved thus far. In this paper, we report the observation of Ge epitaxially grown on mica at a narrow substrate temperature range around 425 °C. Despite the large lattice mismatch (23%) and the lack of high in-plane symmetry in the mica surface, an epitaxial Ge film with [111] out-of-plane orientation is observed. Crystallinity and electrical properties degrade upon deviation from the ideal growth temperature, as shown by Raman spectroscopy, X-ray diffraction, and Hall effect measurements. X-ray pole figure analysis reveals that there exist multiple rotational domains in the epitaxial Ge film with dominant in-plane orientations between Ge [" separators="|1 ¯10 ] and mica[100] of (20 n )°, where n = 0, 1, 2, 3, 4, 5. A superlattice area mismatch model was used to account for the likelihood of the in-plane orientation formation and was found to be qualitatively consistent with the observed dominant orientations. Our observation of Ge epitaxy with one out-of-plane growth direction through van der Waals forces is a step toward the growth of single crystal Ge films without the constraint in the lattice and symmetry matches with the substrates.

Epitaxial Deposition Of Germanium Doped With Gallium

NASA Technical Reports Server (NTRS)

Huffman, James E.

1994-01-01

Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

Solar Hot Water Heater

NASA Technical Reports Server (NTRS)

1978-01-01

The solar panels pictured below, mounted on a Moscow, Idaho home, are part of a domestic hot water heating system capable of providing up to 100 percent of home or small business hot water needs. Produced by Lennox Industries Inc., Marshalltown, Iowa, the panels are commercial versions of a collector co-developed by NASA. In an effort to conserve energy, NASA has installed solar collectors at a number of its own facilities and is conducting research to develop the most efficient systems. Lewis Research Center teamed with Honeywell Inc., Minneapolis, Minnesota to develop the flat plate collector shown. Key to the collector's efficiency is black chrome coating on the plate developed for use on spacecraft solar cells, the coating prevents sun heat from "reradiating," or escaping outward. The design proved the most effective heat absorber among 23 different types of collectors evaluated in a Lewis test program. The Lennox solar domestic hot water heating system has three main components: the array of collectors, a "solar module" (blue unit pictured) and a conventional water heater. A fluid-ethylene glycol and water-is circulated through the collectors to absorb solar heat. The fluid is then piped to a double-walled jacket around a water tank within the solar module.

Epitaxial nickel disilicide with low resistivity and excellent reliability.

PubMed

Hsin, Cheng-Lun; Deng, Shiu-Sheng

2016-02-12

Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 μΩ cm in the experimental results and up to 14.93 μΩ cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black's equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics.

Epitaxial nickel disilicide with low resistivity and excellent reliability

NASA Astrophysics Data System (ADS)

Hsin, Cheng-Lun; Deng, Shiu-Sheng

2016-02-01

Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 μΩ cm in the experimental results and up to 14.93 μΩ cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black’s equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics.

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

DOEpatents

Mandal, Krishna C.; Terry, J. Russell

2016-12-06

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films

DOE PAGES

Keech, Ryan; Morandi, Carl; Wallace, Margeaux; ...

2017-04-11

Continued reduction in length scales associated with many ferroelectric film-based technologies is contingent on retaining the functional properties as the film thickness is reduced. Epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) thin films were studied over the thickness range of 100-350 nm for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO 3, while polycrystalline films with {001}-Lotgering factors >0.96 were grown on Pt/TiO 2/SiO 2/Si substrates via chemical solution deposition. Both film types exhibited similar relative permittivities of ~300 at highmore » fields at all measured thicknesses with highly crystalline electrode/dielectric interfaces. These results, with the DC-biased and temperature dependent dielectric characterization, suggest irreversible domain wall mobility is the major contributor to the overall dielectric response and its thickness dependence. In epitaxial films, the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. The temperature at which a peak in the relative permittivity is observed was the only measured small signal quantity which was more thickness dependent in polycrystalline than epitaxial films. This is attributed to the relaxor nature present in the films, potentially stabilized by defect concentrations, and/or chemical inhomogeneity. Finally, the effective interfacial layers are found to contribute to the measured thickness dependence in the longitudinal piezoelectric coefficient.« less

In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth

NASA Astrophysics Data System (ADS)

Halagačka, L.; Foldyna, M.; Leal, R.; Roca i Cabarrocas, P.

2018-07-01

Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic ellipsometry. The film was deposited by plasma-enhanced chemical vapor deposition (PECVD) on a crystalline silicon substrate at a low substrate temperature of 200 °C. In the deposition process, SiF4 was used as a precursor, B2H6 as doping gas, and a hydrogen/argon mixture as carrier gas. A spectroscopic ellipsometer with a wide spectral range was used for in situ spectroscopic measurements. Since the temperature during process is 200 °C, the optical functions of silicon differ from these at room temperature and have to be adjusted. Thickness of the epitaxial silicon layer was fitted on in situ ellipsometric data. As a result we were able to determine the dynamics of epitaxial layer growth, namely initial layer formation time and epitaxial growth rate. This study opens new perspectives in understanding and monitoring the epitaxial silicon deposition processes as the model fitting can be applied directly during the growth.

Ordered structure of FeGe2 formed during solid-phase epitaxy

NASA Astrophysics Data System (ADS)

Jenichen, B.; Hanke, M.; Gaucher, S.; Trampert, A.; Herfort, J.; Kirmse, H.; Haas, B.; Willinger, E.; Huang, X.; Erwin, S. C.

2018-05-01

Fe3Si /Ge (Fe ,Si ) /Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and solid-phase epitaxy (Ge on Fe3Si ). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize in the well-oriented, layered tetragonal structure FeGe2 with space group P 4 m m . This kind of structure does not exist as a bulk material and is stabilized by the solid-phase epitaxy of Ge on Fe3Si . We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slobodskyy, T.; Ruester, C.; Fiederling, R.

2004-12-20

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

Manipulation of Dirac cones in metal-intercalated epitaxial graphene

NASA Astrophysics Data System (ADS)

Wang, Cai-Zhuang; Kim, Minsung; Tringides, Michael; Ho, Kai-Ming

Graphene is one of the most attractive materials from both fundamental and practical points of view due to its characteristic Dirac cones. The electronic property of graphene can be modified through the interaction with substrate or another graphene layer as illustrated in few-layer epitaxial graphene. Recently, metal intercalation became an effective method to manipulate the electronic structure of graphene by modifying the coupling between the constituent layers. In this work, we show that the Dirac cones of epitaxial graphene can be manipulated by intercalating rare-earth metals. We demonstrate that rare-earth metal intercalated epitaxial graphene has tunable band structures and the energy levels of Dirac cones as well as the linear or quadratic band dispersion can be controlled depending on the location of the intercalation layer and density. Our results could be important for applications and characterizations of the intercalated epitaxial graphene. Supported by the U.S. DOE-BES under Contract No. DE-AC02-07CH11358.

Extrusion of small-diameter, thin-wall tungsten tubing

NASA Technical Reports Server (NTRS)

Blankenship, C. P.; Gyorgak, C. A.

1967-01-01

Small-diameter, thin-wall seamless tubing of tungsten has been fabricated in lengths of up to 10 feet by hot extrusion over a floating mandrel. Extrusion of 0.50-inch-diameter tubing over 0.4-inch-diameter mandrels was accomplished at temperatures ranging from 3000 degrees to 4000 degrees F.

Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

NASA Astrophysics Data System (ADS)

Chen, Lin; Yang, Guan-jun

2018-02-01

In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

Electrostatic transfer of epitaxial graphene to glass.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohta, Taisuke; Pan, Wei; Howell, Stephen Wayne

2010-12-01

We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer method and will compare the properties of the transferred graphene with nominally-equivalent 'as-grown' epitaxial graphene on SiC. The electronic properties of the graphene will be measured using magnetoresistive, four-probe, and graphene field effect transistor geometries [1]. To begin, high-quality epitaxial graphene (mobility 14,000 cm2/Vs and domains >100 {micro}m2) is grown on SiC in an argon-mediated environmentmore » [2,3]. The electrostatic transfer then takes place through the application of a large electric field between the donor graphene sample (anode) and the heated acceptor glass substrate (cathode). Using this electrostatic technique, both patterned few-layer graphene from SiC(000-1) and chip-scale monolayer graphene from SiC(0001) are transferred to Pyrex and Zerodur substrates. Subsequent examination of the transferred graphene by Raman spectroscopy confirms that the graphene can be transferred without inducing defects. Furthermore, the strain inherent in epitaxial graphene on SiC(0001) is found to be partially relaxed after the transfer to the glass substrates.« less

A protection system for the JET ITER-like wall based on imaging diagnostics.

PubMed

Arnoux, G; Devaux, S; Alves, D; Balboa, I; Balorin, C; Balshaw, N; Beldishevski, M; Carvalho, P; Clever, M; Cramp, S; de Pablos, J-L; de la Cal, E; Falie, D; Garcia-Sanchez, P; Felton, R; Gervaise, V; Goodyear, A; Horton, A; Jachmich, S; Huber, A; Jouve, M; Kinna, D; Kruezi, U; Manzanares, A; Martin, V; McCullen, P; Moncada, V; Obrejan, K; Patel, K; Lomas, P J; Neto, A; Rimini, F; Ruset, C; Schweer, B; Sergienko, G; Sieglin, B; Soleto, A; Stamp, M; Stephen, A; Thomas, P D; Valcárcel, D F; Williams, J; Wilson, J; Zastrow, K-D

2012-10-01

The new JET ITER-like wall (made of beryllium and tungsten) is more fragile than the former carbon fiber composite wall and requires active protection to prevent excessive heat loads on the plasma facing components (PFC). Analog CCD cameras operating in the near infrared wavelength are used to measure surface temperature of the PFCs. Region of interest (ROI) analysis is performed in real time and the maximum temperature measured in each ROI is sent to the vessel thermal map. The protection of the ITER-like wall system started in October 2011 and has already successfully led to a safe landing of the plasma when hot spots were observed on the Be main chamber PFCs. Divertor protection is more of a challenge due to dust deposits that often generate false hot spots. In this contribution we describe the camera, data capture and real time processing systems. We discuss the calibration strategy for the temperature measurements with cross validation with thermal IR cameras and bi-color pyrometers. Most importantly, we demonstrate that a protection system based on CCD cameras can work and show examples of hot spot detections that stop the plasma pulse. The limits of such a design and the associated constraints on the operations are also presented.

A protection system for the JET ITER-like wall based on imaging diagnosticsa)

NASA Astrophysics Data System (ADS)

Arnoux, G.; Devaux, S.; Alves, D.; Balboa, I.; Balorin, C.; Balshaw, N.; Beldishevski, M.; Carvalho, P.; Clever, M.; Cramp, S.; de Pablos, J.-L.; de la Cal, E.; Falie, D.; Garcia-Sanchez, P.; Felton, R.; Gervaise, V.; Goodyear, A.; Horton, A.; Jachmich, S.; Huber, A.; Jouve, M.; Kinna, D.; Kruezi, U.; Manzanares, A.; Martin, V.; McCullen, P.; Moncada, V.; Obrejan, K.; Patel, K.; Lomas, P. J.; Neto, A.; Rimini, F.; Ruset, C.; Schweer, B.; Sergienko, G.; Sieglin, B.; Soleto, A.; Stamp, M.; Stephen, A.; Thomas, P. D.; Valcárcel, D. F.; Williams, J.; Wilson, J.; Zastrow, K.-D.; JET-EFDA Contributors

2012-10-01

The new JET ITER-like wall (made of beryllium and tungsten) is more fragile than the former carbon fiber composite wall and requires active protection to prevent excessive heat loads on the plasma facing components (PFC). Analog CCD cameras operating in the near infrared wavelength are used to measure surface temperature of the PFCs. Region of interest (ROI) analysis is performed in real time and the maximum temperature measured in each ROI is sent to the vessel thermal map. The protection of the ITER-like wall system started in October 2011 and has already successfully led to a safe landing of the plasma when hot spots were observed on the Be main chamber PFCs. Divertor protection is more of a challenge due to dust deposits that often generate false hot spots. In this contribution we describe the camera, data capture and real time processing systems. We discuss the calibration strategy for the temperature measurements with cross validation with thermal IR cameras and bi-color pyrometers. Most importantly, we demonstrate that a protection system based on CCD cameras can work and show examples of hot spot detections that stop the plasma pulse. The limits of such a design and the associated constraints on the operations are also presented.

Manufacturing Process Developments for Regeneratively-Cooled Channel Wall Rocket Nozzles

NASA Technical Reports Server (NTRS)

Gradl, Paul; Brandsmeier, Will

2016-01-01

Regeneratively cooled channel wall nozzles incorporate a series of integral coolant channels to contain the coolant to maintain adequate wall temperatures and expand hot gas providing engine thrust and specific impulse. NASA has been evaluating manufacturing techniques targeting large scale channel wall nozzles to support affordability of current and future liquid rocket engine nozzles and thrust chamber assemblies. The development of these large scale manufacturing techniques focus on the liner formation, channel slotting with advanced abrasive water-jet milling techniques and closeout of the coolant channels to replace or augment other cost reduction techniques being evaluated for nozzles. NASA is developing a series of channel closeout techniques including large scale additive manufacturing laser deposition and explosively bonded closeouts. A series of subscale nozzles were completed evaluating these processes. Fabrication of mechanical test and metallography samples, in addition to subscale hardware has focused on Inconel 625, 300 series stainless, aluminum alloys as well as other candidate materials. Evaluations of these techniques are demonstrating potential for significant cost reductions for large scale nozzles and chambers. Hot fire testing is planned using these techniques in the future.

Domain epitaxy for thin film growth

DOEpatents

Narayan, Jagdish

2005-10-18

A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

NASA Astrophysics Data System (ADS)

Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

2017-01-01

GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

Additive Manufacturing of Nickel-Base Superalloy IN100 Through Scanning Laser Epitaxy

NASA Astrophysics Data System (ADS)

Basak, Amrita; Das, Suman

2018-01-01

Scanning laser epitaxy (SLE) is a laser powder bed fusion (LPBF)-based additive manufacturing process that uses a high-power laser to consolidate metal powders facilitating the fabrication of three-dimensional objects. In the present study, SLE is used to produce samples of IN100, a high-γ' non-weldable nickel-base superalloy on similar chemistry substrates. A thorough analysis is performed using various advanced material characterization techniques such as high-resolution optical microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and Vickers microhardness measurements to characterize and compare the quality of the SLE-fabricated IN100 deposits with the investment cast IN100 substrates. The results show that the IN100 deposits have a finer γ/γ' microstructure, weaker elemental segregation, and higher microhardness compared with the substrate. Through this study, it is demonstrated that the SLE process has tremendous potential in the repair and manufacture of gas turbine hot-section components.

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

DOE PAGES

Marshall, Patrick B.; Kim, Honggyu; Ahadi, Kaveh; ...

2017-09-01

We report on the growth of epitaxial Sr 2RuO 4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO 4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr 2RuO 4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electronmore » microscopy. In conclusion, the method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.« less

CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP640) LOOKING NORTHEAST ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP-640) LOOKING NORTHEAST SHOWING OVERALL BLOCK EXTERIOR WALLS; CONSTRUCTION 65 PERCENT COMPLETE. INL PHOTO NUMBER NRTS-60-4976. Holmes, Photographer, 9/26/1960 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

Spin Polarization of Alternate Monatomic Epitaxial [Fe/Co]n Superlattice

NASA Astrophysics Data System (ADS)

Chu, In Chang; Doi, Masaaki; Sahashi, Masashi; Rajanikanth, Ammanabrolu; Takahashi, Yukiko; Hono, Kazuhiro

2012-09-01

The spin polarization (P) of alternate monatomic layered (AML) epitaxial [Fe/Co]n superlattices grown on MgO(001) substrates by electron beam (EB) evaporation has been measured by the point contact Andreev reflection (PCAR) method. The intrinsic transport P of 0.60 was obtained for the AML epitaxial [Fe/Co]n superlattice grown at 75 °C, which is comparable to that of half-metallic Heusler alloys measured by PCAR. The AML epitaxial [Fe/Co]n superlattices on MgO(001), which are expected to possess the B2 ordered structure, show the highest spin polarization of metallic Fe-Co alloy films.

Electrical and structural properties of epitaxially deposited chromium thin films

NASA Astrophysics Data System (ADS)

Ohashi, M.; Sawabu, M.; Nakanishi, H.; Ohashi, K.; Maeta, K.

2018-05-01

We studied the electrical resistance and crystal structure of epitaxial chromium (Cr) films. The lattice constant of the Cr films was larger than that of the bulk Cr because of MgO substrate on which Cr was epitaxially deposited. A chromium oxide layer having a thickness of 1 nm was found on all films from the result of X-ray reflectivity measurements. The electrical resistivity ρ(T) shows metallic behavior for all epitaxial Cr films in contrast with polycrystalline one. However, the magnitude of ρ tends to increase and the antiferromagnetic interaction is suppressed as decreasing thickness of film.

Investigation of Plant Cell Wall Properties: A Study of Contributions from the Nanoscale to the Macroscale Impacting Cell Wall Recalcitrance

NASA Astrophysics Data System (ADS)

Crowe, Jacob Dillon

, alkaline hydrogen peroxide and liquid hot water pretreatments were shown to alter structural properties impacting nanoscale porosity in corn stover. Delignification by alkaline hydrogen peroxide pretreatment decreased cell wall rigidity, with subsequent cell wall swelling resulting in increased nanoscale porosity and improved enzymatic hydrolysis compared to limited swelling and increased accessible surface areas observed in liquid hot water pretreated biomass. The volume accessible to a 90 A dextran probe within the cell wall was found to be positively correlated to both enzyme binding and glucose hydrolysis yields, indicating cell wall porosity is a key contributor to effective hydrolysis yields. In the third study, the effect of altered xylan content and structure was investigated in irregular xylem (irx) Arabidopsis thaliana mutants to understand the role xylan plays in secondary cell wall development and organization. Higher xylan extractability and lower cellulose crystallinity observed in irx9 and irx15 irx15-L mutants compared to wild type indicated altered xylan integration into the secondary cell wall. Nanoscale cell wall organization observed using multiple microscopy techniques was impacted to some extent in all irx mutants, with disorganized cellulose microfibril layers in sclerenchyma secondary cell walls likely resulting from irregular xylan structure and content. Irregular secondary cell wall microfibril layers showed heterogeneous nanomechanical properties compared to wild type, which translated to mechanical deficiencies observed in stem tensile tests. These results suggest nanoscale defects in cell wall strength can correspond to macroscale phenotypes.

Measurements in the near-wall region of a relaxing three-dimensional low speed turbulent air boundary layer

NASA Technical Reports Server (NTRS)

Hebbar, K. S.; Melnik, W. L.

1976-01-01

An experimental investigation was conducted at selected locations of the near-wall region of a three dimensional turbulent air boundary layer relaxing in a nominally zero external pressure gradient behind a transverse hump (in the form of a 30 deg swept, 5-foot chord wing-type model) faired into the side wall of a low speed wind tunnel. Wall shear stresses measured with a flush-mounted hot-film gage and a sublayer fence were in very good agreement with experimental data obtained with two Preston probes. With the upstream unit Reynolds number held constant at 325,000/ft. approximately one-fourth of the boundary layer thickness adjacent to the wall was surveyed with a single rotated hot-wire probe mounted on a specially designed minimum interference traverse mechanism. The boundary layer (approximately 3.5 in thick near the first survey station where the length Reynolds number was 5.5 million) had a maximum crossflow velocity ratio of 0.145 and a maximum crossflow angle of 21.875 deg close to the wall.

Chemical vapor deposition of epitaxial silicon

DOEpatents

Berkman, Samuel

1984-01-01

A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth

NASA Astrophysics Data System (ADS)

Richter, Wolfgang

2007-06-01

In-situ analysis of epitaxial growth is the essential ingredient in order to understand the growth process, to optimize growth and last but not least to monitor or even control the epitaxial growth on a microscopic scale. In MBE (molecular beam epitaxy) in-situ analysis tools existed right from the beginning because this technique developed from Surface Science technology with all its electron based analysis tools (LEED, RHEED, PES etc). Vapour Phase Epitaxy, in contrast, remained for a long time in an empirical stage ("alchemy") because only post growth characterisations like photoluminescence, Hall effect and electrical conductivity were available. Within the last two decades, however, optical techniques were developed which provide similar capabilities as in MBE for Vapour Phase growth. I will discuss in this paper the potential of Reflectance Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) for the growth of thin epitaxial semiconductor layers with zincblende (GaAs etc) and wurtzite structure (GaN etc). Other techniques and materials will be also mentioned.

Silver plating technique seals leaks in thin wall tubing joints

NASA Technical Reports Server (NTRS)

Blenderman, W. H.

1966-01-01

Leaks in thin wall tubing joints are sealed by cleaning and silver plating the hot gas side of the joint in the leakage area. The pressure differential across the silver during hydrostatic test and subsequent use forces the ductile silver into the leak area and seals it.

Advances in Hot-Structure Development

NASA Technical Reports Server (NTRS)

Rivers, H. Kevin; Glass, David E.

2006-01-01

The National Aeronautics and Space Administration has actively participated in the development of hot structures technology for application to hypersonic flight systems. Hot structures have been developed for vehicles including the X-43A, X-37, and the Space Shuttle. These trans-atmospheric and atmospheric entry flight systems that incorporate hot-structures technology are lighter weight and require less maintenance than those that incorporate parasitic, thermal-protection materials that attach to warm or cool substructure. The development of hot structures requires a thorough understanding of material performance in an extreme environment, boundary conditions and load interactions, structural joint performance, and thermal and mechanical performance of integrated structural systems that operate at temperatures ranging from 1500 C to 3000 C, depending on the application. This paper will present recent advances in the development of hot structures, including development of environmentally durable, high temperature leading edges and control surfaces, integrated thermal protection systems, and repair technologies. The X-43A Mach-10 vehicle utilized carbon/carbon (C/C) leading edges on the nose, horizontal control surface, and vertical tail. The nose and vertical and horizontal tail leading edges were fabricated out of a 3:1 biased, high thermal conductivity C/C. The leading edges were coated with a three-layer coating comprised of a SiC conversion of the C/C, followed by a CVD layer of SiC, followed by a thin CVD layer of HfC. Work has also been performed on the development of an integrated structure and was focused on both hot and warm (insulated) structures and integrated fuselage/tank/TPS systems. The objective was to develop integrated multifunctional airframe structures that eliminate fragile external thermal-protection systems and incorporate the insulating function within the structure. The approach taken to achieve this goal was to develop candidate hypersonic

Behavior of temperature-dependent dc-photoconductivity in hot-wall deposited CaAl2Se4 layers

NASA Astrophysics Data System (ADS)

Jeong, J. W.; Hong, K. J.; Jeong, T. S.; Youn, C. J.

2017-10-01

The dc-photoconductive characteristic on the hot-wall grown CaAl2Se4 (CAS) layers was explored as a function of temperature. From the photocurrent (PC) measurement, three PC peaks A, B, and C corresponded to the intrinsic transitions, which represent the band-to-band transitions from the valence-band states of Γ2(A), Γ3 + Γ4(B), and Γ3 + Γ4(C) to the conduction-band state of Γ1, respectively. Based on these PC results, the optical band-gap energy was well matched by E g ( T) = E g (0) - 4.94 × 10-3 T 2/( T + 552), where E g (0) is found to be 3.8239, 3.8716, and 3.8801 eV for three peaks A, B, and C, respectively. Thus, the effect of the crystal field and spin-orbit splitting (These values were extracted out to be 47.7 and 8.5 meV, respectively.) was observed and calculated by means of the PC spectroscopy. However, PC intensity gradually decreased with decreasing temperature unlike an ordinary behavior. In the log J ph vs 1/ T plot, two dominant traplevels were observed to be 20.81 meV at temperatures of 300 - 70 K and 1.18 meV at temperatures below 70 K. Consequently, we extract out that these trapping centers caused by native defects in CAS confine the PC intensity as temperature decreases.

Crystallization engineering as a route to epitaxial strain control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akbashev, Andrew R.; Plokhikh, Aleksandr V.; Barbash, Dmitri

2015-10-01

The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001)SrTiO{sub 3} and (001)LaAlO{sub 3} substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001)BiFeO{sub 3} phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001)SrTiO{sub 3} results in a coherently strained film, themore » same films obtained on (001)LaAlO{sub 3} showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001)SrTiO{sub 3}. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.« less

Investigation of the growth of garnet films by liquid phase epitaxy

NASA Technical Reports Server (NTRS)

Moody, J. W.; Shaw, R. W.; Sandfort, R. M.

1974-01-01

Liquid phase expitaxy was investigated to determine its applicability to fabricating magnetic rare earth garnet films for spacecraft data recording systems. Two mixed garnet systems were investigated in detail: (1) Gd-Y and (2) Eu-Yb-Y. All films were deposited on Gd3Ga5012 substrates. The uniaxial anisotropy of the Gd-Y garnets is primarily stress-induced. These garnets are characterized by high-domain wall mobility, low coercivity and modest anisotropy. Characteristic length was found to be relatively sensitive to temperature. The Eu-Yb-Y garnets exhibit acceptable mobilities, good temperature stability and reasonable quality factors. The uniaxial anisotropy of these garnets is primarily growth-induced. The system is well suited for compositional "tailoring" to optimize specific desirable properties. Liquid phase epitaxy can be used to deposit Gd3Ga5012 spacing layers on magnetic garnet films and this arrangement possesses certain advantages over more conventional magnetic filmspacing layer combinations. However, it cannot be used if the magnetic film is to be ion implanted.

Growth of InN on Ge substrate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Doolittle, W. Alan; Liu, Rong; Mei, Jin; Ponce, Fernando; Cheung, Maurice; Chen, Fei; Furis, Madalina; Cartwright, Alexander

2005-06-01

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1) InN∥(1 1 1) Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

Hygrothermal behavior for a clay brick wall

NASA Astrophysics Data System (ADS)

Allam, R.; Issaadi, N.; Belarbi, R.; El-Meligy, M.; Altahrany, A.

2018-06-01

In Egypt, the clay brick is the common building materials which are used. By studying clay brick walls behavior for the heat and moisture transfer, the efficient use of the clay brick can be reached. So, this research studies the hygrothermal transfer in this material by measuring the hygrothermal properties and performing experimental tests for a constructed clay brick wall. We present the model for the hygrothermal transfer in the clay brick which takes the temperature and the vapor pressure as driving potentials. In addition, this research compares the presented model with previous models. By constructing the clay brick wall between two climates chambers with different boundary conditions, we can validate the numerical model and analyze the hygrothermal transfer in the wall. The temperature and relative humidity profiles within the material are measured experimentally and determined numerically. The numerical and experimental results have a good convergence with 3.5% difference. The surface boundary conditions, the ground effect, the infiltration from the closed chambers and the material heterogeneity affects the results. Thermal transfer of the clay brick walls reaches the steady state very rapidly than the moisture transfer. That means the effect of using only the external brick wall in the building in hot climate without increase the thermal resistance for the wall, will add more energy losses in the clay brick walls buildings. Also, the behavior of the wall at the heat and mass transfer calls the three-dimensional analysis for the whole building to reach the real behavior.

Hygrothermal behavior for a clay brick wall

NASA Astrophysics Data System (ADS)

Allam, R.; Issaadi, N.; Belarbi, R.; El-Meligy, M.; Altahrany, A.

2018-01-01

In Egypt, the clay brick is the common building materials which are used. By studying clay brick walls behavior for the heat and moisture transfer, the efficient use of the clay brick can be reached. So, this research studies the hygrothermal transfer in this material by measuring the hygrothermal properties and performing experimental tests for a constructed clay brick wall. We present the model for the hygrothermal transfer in the clay brick which takes the temperature and the vapor pressure as driving potentials. In addition, this research compares the presented model with previous models. By constructing the clay brick wall between two climates chambers with different boundary conditions, we can validate the numerical model and analyze the hygrothermal transfer in the wall. The temperature and relative humidity profiles within the material are measured experimentally and determined numerically. The numerical and experimental results have a good convergence with 3.5% difference. The surface boundary conditions, the ground effect, the infiltration from the closed chambers and the material heterogeneity affects the results. Thermal transfer of the clay brick walls reaches the steady state very rapidly than the moisture transfer. That means the effect of using only the external brick wall in the building in hot climate without increase the thermal resistance for the wall, will add more energy losses in the clay brick walls buildings. Also, the behavior of the wall at the heat and mass transfer calls the three-dimensional analysis for the whole building to reach the real behavior.

EPITAXIAL GROWTH OF SILICON

DTIC Science & Technology

Epitaxial growth of silicon on a silicon substrate by hydrogen reduction of SiCl4 was investigated. The chemical and physical processes involved in...silicon layers were produced at temperatures between 1100 and 1300 C. The effects of the concentration of SiCl4 in H2, the flow rate of the gas, the

Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

DOE PAGES

A. T. Bollinger; Wu, J.; Bozovic, I.

2016-03-15

In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

Surface morphological evolution of epitaxial CrN(001) layers

NASA Astrophysics Data System (ADS)

Frederick, J. R.; Gall, D.

2005-09-01

CrN layers, 57 and 230 nm thick, were grown on MgO(001) at Ts=600-800 °C by ultrahigh-vacuum magnetron sputter deposition in pure N2 discharges from an oblique deposition angle α=80°. Layers grown at 600 °C nucleate as single crystals with a cube-on-cube epitaxial relationship with the substrate. However, rough surfaces with cauliflower-type morphologies cause the nucleation of misoriented CrN grains that develop into cone-shaped grains that protrude out of the epitaxial matrix to form triangular faceted surface mounds. The surface morphology of epitaxial CrN(001) grown at 700 °C is characterized by dendritic ridge patterns extending along the orthogonal <110> directions superposed by square-shaped super mounds with <100> edges. The ridge patterns are attributed to a Bales-Zangwill instability while the supermounds form due to atomic shadowing which leads to the formation of epitaxial inverted pyramids that are separated from the surrounding layer by tilted nanovoids. Growth at 800 °C yields complete single crystals with smooth surfaces. The root-mean-square surface roughness for 230-nm-thick layers decreases from 18.8 to 9.3 to 1.1 nm as Ts is raised from 600 to 700 to 800 °C. This steep decrease is due to a transition in the roughening mechanism from atomic shadowing to kinetic roughening. Atomic shadowing is dominant at 600 and 700 °C, where misoriented grains and supermounds, respectively, capture a larger fraction of the oblique deposition flux in comparison to the surrounding epitaxial matrix, resulting in a high roughening rate that is described by a power law with an exponent β>0.5. In contrast, kinetic roughening controls the surface morphology for Ts=800 °C, as well as the epitaxial fraction of the layers grown at 600 and 700 °C, yielding relatively smooth surfaces and β<=0.27.

Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.

Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZr xTi 1-xO 3 (PZT)/rhombohedral (R) PbZr xTi 1-xO 3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface.more » Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.« less

Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

DOE PAGES

Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; ...

2016-10-31

Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZr xTi 1-xO 3 (PZT)/rhombohedral (R) PbZr xTi 1-xO 3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface.more » Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.« less

Effect of Wall Temperature on Roughness Induced Attachment-Line Transition

NASA Technical Reports Server (NTRS)

Dietz, Anthony; Coleman, Colin; Laub, Jim; Poll, D. I. A.; Nixon, David (Technical Monitor)

1999-01-01

An experiment on a cooled swept cylinder in a low-disturbance Mach 1.6 wind tunnel is described. The flow attachment line is disturbed by trip wires of varying size and the laminar/turbulent state of the downstream boundary layer is determined with a hot wire. The results demonstrate that although cooling the wall increases the stability of the boundary layer, it promotes roughness induced transition. Analysis of the data suggests that the attachment- line Reynolds number can account for the effect of wall cooling if the viscosity is evaluated at a particular reference temperature.

Enhanced magnetic and thermoelectric properties in epitaxial polycrystalline SrRuO3 thin films.

PubMed

Woo, Sungmin; Lee, Sang A; Mun, Hyeona; Choi, Young Gwan; Zhung, Chan June; Shin, Soohyeon; Lacotte, Morgane; David, Adrian; Prellier, Wilfrid; Park, Tuson; Kang, Won Nam; Lee, Jong Seok; Kim, Sung Wng; Choi, Woo Seok

2018-03-01

Transition metal oxide thin films show versatile electric, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the modification of magnetic and thermal transport properties by fabricating single- and polycrystalline epitaxial SrRuO 3 thin films using pulsed laser epitaxy. Using the epitaxial stabilization technique with an atomically flat polycrystalline SrTiO 3 substrate, an epitaxial polycrystalline SrRuO 3 thin film with the crystalline quality of each grain comparable to that of its single-crystalline counterpart is realized. In particular, alleviated compressive strain near the grain boundaries due to coalescence is evidenced structurally, which induced the enhancement of ferromagnetic ordering of the polycrystalline epitaxial thin film. The structural variations associated with the grain boundaries further reduce the thermal conductivity without deteriorating the electronic transport, and lead to an enhanced thermoelectric efficiency in the epitaxial polycrystalline thin films, compared with their single-crystalline counterpart.

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

NASA Astrophysics Data System (ADS)

Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

2017-02-01

Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

Manipulation of Dirac cones in intercalated epitaxial graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Minsung; Tringides, Michael C.; Hershberger, Matthew T.

Graphene is an intriguing material in view of its unique Dirac quasi-particles, and the manipulation of its electronic structure is important in material design and applications. Here, we theoretically investigate the electronic band structure of epitaxial graphene on SiC with intercalation of rare earth metal ions (e.g., Yb and Dy) using first-principles calculations. We can use the intercalation to control the coupling of the constituent components (buffer layer, graphene, and substrate), resulting in strong modification of the graphene band structure. We also demonstrate that the metal-intercalated epitaxial graphene has tunable band structures by controlling the energies of Dirac cones asmore » well as the linear and quadratic band dispersion depending on the intercalation layer and density. Thus, the metal intercalation is a viable method to manipulate the electronic band structure of the epitaxial graphene, which can enhance the functional utility and controllability of the material.« less

Manipulation of Dirac cones in intercalated epitaxial graphene

DOE PAGES

Kim, Minsung; Tringides, Michael C.; Hershberger, Matthew T.; ...

2017-07-12

Graphene is an intriguing material in view of its unique Dirac quasi-particles, and the manipulation of its electronic structure is important in material design and applications. Here, we theoretically investigate the electronic band structure of epitaxial graphene on SiC with intercalation of rare earth metal ions (e.g., Yb and Dy) using first-principles calculations. We can use the intercalation to control the coupling of the constituent components (buffer layer, graphene, and substrate), resulting in strong modification of the graphene band structure. We also demonstrate that the metal-intercalated epitaxial graphene has tunable band structures by controlling the energies of Dirac cones asmore » well as the linear and quadratic band dispersion depending on the intercalation layer and density. Thus, the metal intercalation is a viable method to manipulate the electronic band structure of the epitaxial graphene, which can enhance the functional utility and controllability of the material.« less

A&M. Hot liquid waste treatment building (TAN616). Camera facing northeast. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

A&M. Hot liquid waste treatment building (TAN-616). Camera facing northeast. South wall with oblique views of west sides of structure. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

PubMed Central

Holmes, Kyland; Mazur, Yuriy I; Ramsey, Kimberly A; Salamo, Gregory J

2006-01-01

The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.

Laterally Overgrown Structures as Substrates for Lattice Mismatched Epitaxy

DTIC Science & Technology

2002-06-03

low supersaturation substrate [3]. Therefore, equilibrium growth techniques as liquid buffer with TD phase epitaxy (LPE) or vapour phase epitaxy (VPE...phase diffusion during MBE growth, so lateral over- low cost semiconductor devices. Therefore, vapour growth must rely on the surface mobility of...is replaced by graphite film not wetted For the GaAs on GaAs ELO system we attributed by the gallium melt [35]. Similarly, tungsten has been broadening

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

NASA Astrophysics Data System (ADS)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP640) LOOKING NORTHWEST, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP-640) LOOKING NORTHWEST, SHOWING FORMING FOR NORTH WALLS OF CELLS 1, 4 AND 5; CONSTRUCTION 21 PERCENT COMPLETE. INL PHOTO NUMBER NRTS-60-1874. Holmes, Photographer, 4/21/1960 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

Fermi level pinning at epitaxial Si on GaAs(100) interfaces

NASA Astrophysics Data System (ADS)

Silberman, J. A.; de Lyon, T. J.; Woodall, J. M.

1991-12-01

GaAs Schottky barrier contacts and metal-insulator-semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)-Si interface. We have used x-ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n- and p-type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field-effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.

van der Waals epitaxial ZnTe thin film on single-crystalline graphene

NASA Astrophysics Data System (ADS)

Sun, Xin; Chen, Zhizhong; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Washington, Morris; Lu, Toh-Ming

2018-01-01

Graphene template has long been promoted as a promising host to support van der Waals flexible electronics. However, van der Waals epitaxial growth of conventional semiconductors in planar thin film form on transferred graphene sheets is challenging because the nucleation rate of film species on graphene is significantly low due to the passive surface of graphene. In this work, we demonstrate the epitaxy of zinc-blende ZnTe thin film on single-crystalline graphene supported by an amorphous glass substrate. Given the amorphous nature and no obvious remote epitaxy effect of the glass substrate, this study clearly proves the van der Waals epitaxy of a 3D semiconductor thin film on graphene. X-ray pole figure analysis reveals the existence of two ZnTe epitaxial orientational domains on graphene, a strong X-ray intensity observed from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [10] orientation domain, and a weaker intensity from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [11] orientation domain. Furthermore, this study systematically investigates the optoelectronic properties of this epitaxial ZnTe film on graphene using temperature-dependent Raman spectroscopy, steady-state and time-resolved photoluminescence spectroscopy, and fabrication and characterization of a ZnTe-graphene photodetector. The research suggests an effective approach towards graphene-templated flexible electronics.

Experimental Evaluation of Hot Films on Ceramic Substrates for Skin-Friction Measurement

NASA Technical Reports Server (NTRS)

Noffz, Gregory K.; Lavine, Adrienne S.; Hamory, Philip J.

2003-01-01

An investigation has been performed on the use of low-thermal conductivity, ceramic substrates for hot films intended to measure skin friction. Hot films were deposited on two types of ceramic substrates. Four hot films used composite-ceramic substrates with subsurface thermocouples (TCs), and two hot films were deposited on thin Macor(R) substrates. All six sensors were tested side by side in the wall of the NASA Glenn Research Center 8-ft by 6-ft Supersonic Wind Tunnel (SWT). Data were obtained from zero flow to Mach 1.98 in air. Control measurements were made with three Preston tubes and two boundary-layer rakes. The tests were repeated at two different hot film power levels. All hot films and subsurface TCs functioned throughout the three days of testing. At zero flow, the films on the high-thermal conductivity Macor(R) substrates required approximately twice the power as those on the composite-ceramic substrates. Skin-friction results were consistent with the control measurements. Estimates of the conduction heat losses were made using the embedded TCs but were hampered by variability in coating thicknesses and TC locations.

Hot Deformation Behavior of Hot-Extruded AA7175 Through Hot Torsion Tests.

PubMed

Lee, Se-Yeon; Jung, Taek-Kyun; Son, Hyeon-Woo; Kim, Sang-Wook; Son, Kwang-Tae; Choi, Ho-Joon; Oh, Sang-Ho; Lee, Ji-Woon; Hyun, Soong-Keun

2018-03-01

The hot deformation behavior of hot-extruded AA7175 was investigated with flow curves and processing maps through hot torsion tests. The flow curves and the deformed microstructures revealed that dynamic recrystallization (DRX) occurred in the hot-extruded AA7175 during hot working. The failure strain was highest at medium temperature. This was mainly influenced by the dynamic precipitation of fine rod-shaped MgZn2. The processing map determined the optimal deformation condition for the alloy during hot working.

Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

NASA Astrophysics Data System (ADS)

Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

2018-04-01

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

NASA Astrophysics Data System (ADS)

Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B.; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Voss, Paul L.; de Heer, Walt A.; Berger, Claire; Ougazzaden, Abdallah

2016-03-01

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5-8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metalmore » organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.« less

Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Lin, Chia-Hung; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya

2012-04-01

Low-angle-incidence microchannel epitaxy (LAIMCE) of a-plane GaN was performed using ammonia-based metal-organic molecular beam epitaxy to obtain wide and thin lateral overgrowth over a SiO2 mask. Trimethylgallium (TMG) was supplied perpendicular to the openings cut in the mask with a low incident angle of 5° relative to the substrate plane. The [NH3]/[TMG] ratio (R) dependence of GaN LAIMCE was optimized by varying R from 5 to 30. A wide lateral overgrowth of 3.7 µm with a dislocation density below the transmission electron microscope detection limit was obtained at R=15 for a thickness of 520 nm.

Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

DOE PAGES

Gao, Xiang; Lee, Shinbuhm; Nichols, John A.; ...

2016-12-02

Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO 2(B) thin film on a perovskite SrTiO 3 (STO) substrate. For this study, we observe an ultrathin (2–3 unit cells) interlayer best described as highly strained VO 2(B) nanodomains combined with an extra (Ti,V)O 2 layer on the TiO 2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO 2(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despitemore » their large symmetry and lattice mismatch.« less

The processes of formation and epitaxial alignment of SrTiO3 thin films prepared by metallo-organic decomposition

NASA Astrophysics Data System (ADS)

Braunstein, G.; Paz-Pujalt, G. R.; Mason, M. G.; Blanton, T.; Barnes, C. L.; Margevich, D.

1993-01-01

The processes of formation and crystallization of thin films of SrTiO3 prepared by the method of metallo-organic decomposition have been studied with particular emphasis on the relationship between the thermal decomposition of the metallo-organic precursors and the eventual epitaxial alignment of the crystallized films. The films are deposited by spin coating onto single-crystalline silicon and SrTiO3 substrates, pyrolyzed on a hot plate at temperatures ranging from 200 to 450 °C, and subsequently heat treated in a quartz tube furnace at temperatures ranging from 300 to 1200 °C. Heat treatment at temperatures up to 450-500 °C results in the evaporation of solvents and other organic addenda, thermal decomposition of the metallo-organic (primarily metal-carboxylates) precursors, and formation of a carbonate species. This carbonate appears to be an intermediate phase in the reaction of SrCO3 and TiO2 to form SrTiO3. Relevant to this work is the fact that the carbonate species exhibits diffraction lines, indicating the formation of grains that can serve as seeds for the nucleation and growth of randomly oriented SrTiO3 crystallites, thereby leading to a polycrystalline film. Deposition on silicon substrates indeed results in the formation of polycrystalline SrTiO3. However, when the precursor solution is deposited on single-crystalline SrTiO3 substrates, the crystallization process involves a competition between two mechanisms: the random nucleation and growth of crystallites just described, and layer-by-layer solid phase epitaxy. Epitaxial alignment on SrTiO3 substrates can be achieved when the samples are heat treated at temperatures of 1100-1200 °C or at temperatures as low as 600-650 °C when the substrate is heated to about 1100 °C before spin coating.

Production of vertical arrays of small diameter single-walled carbon nanotubes

DOEpatents

Hauge, Robert H; Xu, Ya-Qiong

2013-08-13

A hot filament chemical vapor deposition method has been developed to grow at least one vertical single-walled carbon nanotube (SWNT). In general, various embodiments of the present invention disclose novel processes for growing and/or producing enhanced nanotube carpets with decreased diameters as compared to the prior art.

Interface magnetic anisotropy for monatomic layer-controlled Co/Ni epitaxial multilayers

NASA Astrophysics Data System (ADS)

Shioda, A.; Seki, T.; Shimada, J.; Takanashi, K.

2015-05-01

The magnetic properties for monatomic layer (ML)-controlled Co/Ni epitaxial multilayers were investigated in order to evaluate the interface magnetic anisotropy energy (Ks) between Ni and Co layers. The Co/Ni epitaxial multilayers were prepared on an Al2O3 (11-20) substrate with V/Au buffer layers. The value of Ks was definitely larger than that for the textured Co/Ni grown on a thermally oxidized Si substrate. We consider that the sharp interface for the epitaxial Co/Ni played a role to increase the value of Ks, which also enabled us to obtain perpendicular magnetization even for the 1 ML-Co/1 ML-Ni multilayer.

Choice of Substrate Material for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2015-06-14

Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

Three-dimensional lattice matching of epitaxially embedded nanoparticles

NASA Astrophysics Data System (ADS)

May, Brelon J.; Anderson, Peter M.; Myers, Roberto C.

2017-02-01

For a given degree of in-plane lattice mismatch between a two-dimensional (2D) epitaxial layer and a substrate (ɛIP*), there is a critical thickness above which interfacial defects form to relax the elastic strain energy. Here, we extend the 2D lattice-matching conditions to three-dimensions in order to predict the critical size beyond which epitaxially encased nanoparticles, characterized by both ɛIP* and out-of-plane lattice mismatch (ɛOP*), relax by dislocation formation. The critical particle length (Lc) at which defect formation proceeds is determined by balancing the reduction in elastic energy associated with dislocation introduction with the corresponding increase in defect energy. Our results, which use a modified Eshelby inclusion technique for an embedded, arbitrarily-faceted nanoparticle, provide new insight to the nanoepitaxy of low dimensional structures, especially quantum dots and nanoprecipitates. By engineering ɛIP* and ɛOP* , the predicted Lc for nanoparticles can be increased to well beyond the case of encapsulation in a homogenous matrix. For the case of truncated pyramidal shaped InAs, Lc 10.8 nm when fully embedded in GaAs (ɛIP* = ɛOP* = - 0.072); 16.4 nm when the particle is grown on GaAs, but capped with InSb (ɛIP* = - 0.072 and ɛOP* =+0.065); and a maximum of 18.4 nm if capped with an alloy corresponding to ɛOP* =+0.037. The effect, which we term "3D Poisson-stabilization" provides a means to increase the epitaxial strain tolerance in epitaxial heterostructures by tailoring ɛOP*.

Selective epitaxy using the gild process

DOEpatents

Weiner, Kurt H.

1992-01-01

The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

Epitaxy of GaN in high aspect ratio nanoscale holes over silicon substrate

NASA Astrophysics Data System (ADS)

Wang, Kejia; Wang, Anqi; Ji, Qingbin; Hu, Xiaodong; Xie, Yahong; Sun, Ying; Cheng, Zhiyuan

2017-12-01

Dislocation filtering in gallium nitride (GaN) by epitaxial growth through patterned nanoscale holes is studied. GaN grown from extremely high aspect ratio holes by metalorganic chemical vapor deposition is examined by transmission electron microscopy and high-resolution transmission electron microscopy. This selective area epitaxial growth method with a reduced epitaxy area and an increased depth to width ratio of holes leads to effective filtering of dislocations within the hole and improves the quality of GaN significantly.

Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe

NASA Astrophysics Data System (ADS)

Mavridi, N.; Zhu, J.; Eldose, N. M.; Prior, K. A.; Moug, R. T.

2018-05-01

ZnSe layers grown by molecular beam epitaxy (MBE), after processing by epitaxial lift-off, have been analyzed using fracture mechanics and thin-film interference to determine their adhesion properties on two different substrates, viz. ZnSe and glass, yielding adhesion energy of 270 ± 60 mJ m-2 and 34 ± 4 mJ m-2, respectively. These values are considerably larger than if only van der Waals forces were present and imply that adhesion arises from chemical bonding.

Additive Manufacturing of Single-Crystal Superalloy CMSX-4 Through Scanning Laser Epitaxy: Computational Modeling, Experimental Process Development, and Process Parameter Optimization

NASA Astrophysics Data System (ADS)

Basak, Amrita; Acharya, Ranadip; Das, Suman

2016-08-01

This paper focuses on additive manufacturing (AM) of single-crystal (SX) nickel-based superalloy CMSX-4 through scanning laser epitaxy (SLE). SLE, a powder bed fusion-based AM process was explored for the purpose of producing crack-free, dense deposits of CMSX-4 on top of similar chemistry investment-cast substrates. Optical microscopy and scanning electron microscopy (SEM) investigations revealed the presence of dendritic microstructures that consisted of fine γ' precipitates within the γ matrix in the deposit region. Computational fluid dynamics (CFD)-based process modeling, statistical design of experiments (DoE), and microstructural characterization techniques were combined to produce metallurgically bonded single-crystal deposits of more than 500 μm height in a single pass along the entire length of the substrate. A customized quantitative metallography based image analysis technique was employed for automatic extraction of various deposit quality metrics from the digital cross-sectional micrographs. The processing parameters were varied, and optimal processing windows were identified to obtain good quality deposits. The results reported here represent one of the few successes obtained in producing single-crystal epitaxial deposits through a powder bed fusion-based metal AM process and thus demonstrate the potential of SLE to repair and manufacture single-crystal hot section components of gas turbine systems from nickel-based superalloy powders.

Epitaxial growth of highly strained antimonene on Ag(111)

NASA Astrophysics Data System (ADS)

Mao, Ya-Hui; Zhang, Li-Fu; Wang, Hui-Li; Shan, Huan; Zhai, Xiao-Fang; Hu, Zhen-Peng; Zhao, Ai-Di; Wang, Bing

2018-06-01

The synthesis of antimonene, which is a promising group-V 2D material for both fundamental studies and technological applications, remains highly challenging. Thus far, it has been synthesized only by exfoliation or growth on a few substrates. In this study, we show that thin layers of antimonene can be grown on Ag(111) by molecular beam epitaxy. High-resolution scanning tunneling microscopy combined with theoretical calculations revealed that the submonolayer Sb deposited on a Ag(111) surface forms a layer of AgSb2 surface alloy upon annealing. Further deposition of Sb on the AgSb2 surface alloy causes an epitaxial layer of Sb to form, which is identified as antimonene with a buckled honeycomb structure. More interestingly, the lattice constant of the epitaxial antimonene (5 Å) is much larger than that of freestanding antimonene, indicating a high tensile strain of more than 20%. This kind of large strain is expected to make the antimonene a highly promising candidate for roomtemperature quantum spin Hall material.

Extended hot carrier lifetimes observed in bulk In{sub 0.265±0.02}Ga{sub 0.735}N under high-density photoexcitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yi; Tayebjee, Murad J. Y.; Smyth, Suntrana

2016-03-28

We have investigated the ultrafast carrier dynamics in a 1 μm bulk In{sub 0.265}Ga{sub 0.735}N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and bi-exponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 × 10{sup 16 }cm{sup −3}. A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 × 10{sup 18 }cm{sup −3}. Thismore » is the longest carrier thermalization time observed in bulk InGaN alloys to date.« less

Manufacture of thin-walled clad tubes by pressure welding of roll bonded sheets

NASA Astrophysics Data System (ADS)

Schmidt, Hans Christian; Grydin, Olexandr; Stolbchenko, Mykhailo; Homberg, Werner; Schaper, Mirko

2017-10-01

Clad tubes are commonly manufactured by fusion welding of roll bonded metal sheets or, mechanically, by hydroforming. In this work, a new approach towards the manufacture of thin-walled tubes with an outer diameter to wall thickness ratio of about 12 is investigated, involving the pressure welding of hot roll bonded aluminium-steel strips. By preparing non-welded edges during the roll bonding process, the strips can be zip-folded and (cold) pressure welded together. This process routine could be used to manufacture clad tubes in a continuous process. In order to investigate the process, sample tube sections with a wall thickness of 2.1 mm were manufactured by U-and O-bending from hot roll bonded aluminium-stainless steel strips. The forming and welding were carried out in a temperature range between RT and 400°C. It was found that, with the given geometry, a pressure weld is established at temperatures starting above 100°C. The tensile tests yield a maximum bond strength at 340°C. Micrograph images show a consistent weld of the aluminium layer over the whole tube section.

A comparison of disturbance levels measured in hypersonic tunnels using a hot-wire anemometer and a pitot pressure probe.

NASA Technical Reports Server (NTRS)

Stainback, P. C.; Wagner, R. D.

1972-01-01

Disturbance levels were measured in the test section of a Mach 5 blowdown jet using a constant-current, hot-wire anemometer and a pressure transducer. The disturbance levels, measured by the two instruments and normalized by local mean values, agreed within about 30%, with the pitot data higher than the hot-wire data. The rms disturbance levels measured with the hot-wire anemometer and converted to pitot pressures using a quasi-steady flow analysis, were about two-thirds the levels measured with the pitot probe. The variation of the normalized rms disturbance levels with stagnation pressure indicated that transition occurred in the boundary layer on the nozzle wall and influenced the outputs of the instruments located at the exit of the nozzle when the total pressure was about 35 N/sq cm. Below this pressure the disturbance levels decreased markedly. At higher pressures the disturbances were predominantly aerodynamic noise generated by the turbulent boundary layer on the nozzle wall.

Epitaxial ternary nitride thin films prepared by a chemical solution method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Hongmei; Feldmann, David M; Wang, Haiyan

2008-01-01

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

Process for growing epitaxial gallium nitride and composite wafers

DOEpatents

Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

2003-05-13

A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

PubMed

Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2015-07-08

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

van der Waals epitaxy of CdTe thin film on graphene

NASA Astrophysics Data System (ADS)

Mohanty, Dibyajyoti; Xie, Weiyu; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Zhang, Shengbai; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

2016-10-01

van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. In this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO2/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

Wall shear measurement in sand-water mixture flows

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yucel, O.; Grad, W.H.

1975-07-01

The wall shear stress was measured in clear-water and sand-water mixture flows with the use of a flush-mounting hot-film shear-sensor. Data were obtained with 2 shear-sensors and 2 different sands (d50 = 0.45 mm and d50 = 0.88 mm) with solids concentrations of up to Cmax = 1.6% by vol, and for flow Reynolds number of 10/sup 5/ < RD < 6 x 10/sup 5/. The measured sensor wall shear stresses were compared with the true wall shear stresses obtained with the energy head loss measurements conducted in a pipeline system. The results of the tests in the clear-water flowsmore » confirmed the relationship between the sensor power output, Ps, and the wall shear stress, tauo, given by tauo1/3 = APs + B, in which A and B are calibration coefficients. The tests with the low-concentration sand-water mixtures in a vertical pipe indicated that for the present range of experiments, sensor power outputs with the mixtures exceeded those for clear-water by an average of 5%. It is shown that the shear sensors are delicate but accurate instruments that can be used for the measurement of the wall shear stress. (13 refs.)« less

Refrigerator with anti-sweat hot liquid loop

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woolley, S.J.; Cushing, D.S.; Jenkins, T.E.

A cabinet assembly for a refrigerator having a freezer compartment ontop with two top front corners, a fresh food compartment on the bottom, a mullion partition between the compartments and a hot liquid anti-sweat loop is described comprising; an outer sheet metal shell having a top panel, side panels and a front face, a brace located at each of the two top front corners of the cabinet and having two formed sections at right angles to each other and each section is formed as an inwardly open U-shaped channel having a base, a first leg and a second leg spacedmore » apart and integrally joined to the base, fastening means for rigidly attaching each of the second leg of the corner braces to the flange of the third wall of the front face, and means to secure a portion of the hot liquid anti-sweat loop to the braces.« less

Influence of hot and cold neutrals on scrape-off layer tokamak plasma turbulence

NASA Astrophysics Data System (ADS)

Bisai, N.; Kaw, P. K.

2018-01-01

The modification of interchange plasma turbulence in the scrape-off layer (SOL) region by the presence of hot and cold neutral gas molecules has been studied. The nonlinear equations have been solved numerically using two different simulations ("uniform-Te" and "varying-Te"), and the results obtained from both of the models have been compared. The hot neutrals, responsible for the increase in the electron density in the SOL, also account for more ionization of the cold molecules. The effect of hot and cold neutrals on the interchange turbulence is almost similar in the "uniform-Te" model, but in the "varying-Te" model, the influence of the hot neutrals is very small, specifically in the far SOL region. The neutral gas in the "varying Te" model decreases the heat load on the material walls by about 7%. A reduction in the radial velocity by about 25% and effective diffusion coefficient of the plasma particles has been found by the influence of the neutral gas.

Aqueous solution epitaxy of CdS layers on CuInSe 2

NASA Astrophysics Data System (ADS)

Furlong, M. J.; Froment, M.; Bernard, M. C.; Cortès, R.; Tiwari, A. N.; Krejci, M.; Zogg, H.; Lincot, D.

1998-09-01

Epitaxial CdS thin films have been deposited from an aqueous ammonia solution containing cadmium ions and thiourea as precursors on single crystalline CuInSe 2 films prepared by MBE on Si(1 1 1) and GaAs(1 0 0) substrates. The structure and quality of the films were investigated by RHEED, glancing angle XRD and HRTEM in cross-section. The films are cubic on (1 0 0) substrates, and mixed cubic and hexagonal on (1 1 1) substrates due to the presence of stacking faults parallel to the substrate. The growth is under surface kinetic control with an activation energy of 85 kJ mol -1. Epitaxy improves with increasing temperature and an epitaxial transition temperature at approx. 60°C is demonstrated in the selected experimental conditions. The epitaxy is very sensitive to the preparation of the surface. Beneficial effects of in situ or ex situ chemical etching are found. Similarities between aqueous solution and vapor-phase chemical depositions are pointed out.

Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films

DOE PAGES

Damodaran, Anoop; Okatan, M. B.; Kacher, J.; ...

2016-02-15

Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr 1-xTimore » xO 3 heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.« less

Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damodaran, Anoop; Okatan, M. B.; Kacher, J.

Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr 1-xTimore » xO 3 heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.« less

Thermal Stress in HFEF Hot Cell Windows Due to an In-Cell Metal Fire

DOE PAGES

Solbrig, Charles W.; Warmann, Stephen A.

2016-01-01

This work investigates an accident during the pyrochemical extraction of Uranium and Plutonium from PWR spent fuel in an argon atmosphere hot cell. In the accident, the heavy metals (U and Pu) being extracted are accidentally exposed to air from a leaky instrument penetration which goes through the cell walls. The extracted pin size pieces of U and Pu metal readily burn when exposed to air. Technicians perform the electrochemical extraction using manipulators through a 4 foot thick hot cell concrete wall which protects them from the radioactivity of the spent fuel. Four foot thick windows placed in the wallmore » allow the technicians to visually control the manipulators. These windows would be exposed to the heat of the metal fire. As a result, this analysis determines if the thermal stress caused by the fire would crack the windows and if the heat would degrade the window seals allowing radioactivity to escape from the cell.« less

Thermal Stress in HFEF Hot Cell Windows Due to an In-Cell Metal Fire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solbrig, Charles W.; Warmann, Stephen A.

This work investigates an accident during the pyrochemical extraction of Uranium and Plutonium from PWR spent fuel in an argon atmosphere hot cell. In the accident, the heavy metals (U and Pu) being extracted are accidentally exposed to air from a leaky instrument penetration which goes through the cell walls. The extracted pin size pieces of U and Pu metal readily burn when exposed to air. Technicians perform the electrochemical extraction using manipulators through a 4 foot thick hot cell concrete wall which protects them from the radioactivity of the spent fuel. Four foot thick windows placed in the wallmore » allow the technicians to visually control the manipulators. These windows would be exposed to the heat of the metal fire. As a result, this analysis determines if the thermal stress caused by the fire would crack the windows and if the heat would degrade the window seals allowing radioactivity to escape from the cell.« less

A&M. TAN607. Special service cubicle (hot cell). Details include Zpipe ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

A&M. TAN-607. Special service cubicle (hot cell). Details include Z-pipe and stepped plug penetrations through shielding wall. Ralph M. Parsons 902-3-ANP-607-A116. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-693-106767 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

A&M. Hot liquid waste treatment building (TAN616), south side. Camera ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

A&M. Hot liquid waste treatment building (TAN-616), south side. Camera facing north. Personnel door at left side of wall. Partial view of outdoor stairway to upper level platform. Note concrete construction. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-3 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

Electrical transport properties of epitaxial titanium nitride nanowire

NASA Astrophysics Data System (ADS)

Makise, K.; Shinozaki, B.

2018-03-01

We have measured the transport properties of epitaxial titanium nitride (TiN) nanowires. Epitaxial TiN layer, deposited by dc magnetron sputtering on MgO(100) substrates at growth temperature T = 1073 K. Samples of nanowire were fabricated by e-beam lithography and reactive ion etching. Although TiN films with 100 nm-thickness have superconducting transition temperature T C ∼ 5 K, nanowires does not appear resistive transition until 0.15 K. The magnetoresistance (MR) are always negative. Furthermore for MR experimental results, we attempt to fit the data using one-dimensional weak localization theory. In addition we observed oscillations of magnetoresistance below 5 K.

Solar 'hot spots' are still hot

NASA Technical Reports Server (NTRS)

Bai, Taeil

1990-01-01

Longitude distributions of solar flares are not random but show evidence for active zones (or hot spots) where flares are concentrated. According to a previous study, two hot spots in the northern hemisphere, which rotate with a synodic period of about 26.72 days, produced the majority of major flares, during solar cycles 20 and 21. The more prominent of these two hot spots is found to be still active during the rising part of cycle 22, producing the majority of northern hemisphere major flares. The synodic rotation period of this hot spot is 26.727 + or - 0.007 days. There is also evidence for hot spots in the southern hemisphere. Two hot spots separated by 180 deg are found to rotate with a period of 29.407 days, with one of them having persisted in the same locations during cycles 19-22 and the other, during cycles 20-22.

Nucleation and growth of single layer graphene on electrodeposited Cu by cold wall chemical vapor deposition

NASA Astrophysics Data System (ADS)

Das, Shantanu; Drucker, Jeff

2017-03-01

The nucleation density and average size of graphene crystallites grown using cold wall chemical vapor deposition (CVD) on 4 μm thick Cu films electrodeposited on W substrates can be tuned by varying growth parameters. Growth at a fixed substrate temperature of 1000 °C and total pressure of 700 Torr using Ar, H2 and CH4 mixtures enabled the contribution of total flow rate, CH4:H2 ratio and dilution of the CH4/H2 mixture by Ar to be identified. The largest variation in nucleation density was obtained by varying the CH4:H2 ratio. The observed morphological changes are analogous to those that would be expected if the deposition rate were varied at fixed substrate temperature for physical deposition using thermal evaporation. The graphene crystallite boundary morphology progresses from irregular/jagged through convex hexagonal to regular hexagonal as the effective C deposition rate decreases. This observation suggests that edge diffusion of C atoms along the crystallite boundaries, in addition to H2 etching, may contribute to shape evolution of the graphene crystallites. These results demonstrate that graphene grown using cold wall CVD follows a nucleation and growth mechanism similar to hot wall CVD. As a consequence, the vast knowledge base relevant to hot wall CVD may be exploited for graphene synthesis by the industrially preferable cold wall method.

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

NASA Astrophysics Data System (ADS)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

NASA Astrophysics Data System (ADS)

Singh, S. K.; Kim, Y. K.; Funakubo, H.; Ishiwara, H.

2006-04-01

Epitaxial BiFeO3 (BFO) thin films were fabricated on (001)-, (110)-, and (111)-oriented single-crystal SrRuO3(SRO )/SrTiO3(STO) structures by chemical solution deposition. X-ray diffraction indicates the formation of an epitaxial single-phase perovskite structure and pole figure measurement confirms the cube-on-cube epitaxial relationship of BFO ‖SRO‖STO. Chemical-solution-deposited BFO films have a rhombohedral structure with lattice parameter of 0.395nm, which is the same structure as that of a bulk single crystal. The remanent polarization of approximately 50μC/cm2 was observed in BFO (001) thin films at 80K.

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

NASA Technical Reports Server (NTRS)

Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

1988-01-01

Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

DOE PAGES

Ju, Guangxu; Highland, Matthew J.; Yanguas-Gil, Angel; ...

2017-03-21

Here, we describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and filmmore » structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.« less

An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides.

PubMed

Ju, Guangxu; Highland, Matthew J; Yanguas-Gil, Angel; Thompson, Carol; Eastman, Jeffrey A; Zhou, Hua; Brennan, Sean M; Stephenson, G Brian; Fuoss, Paul H

2017-03-01

We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.

An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

NASA Astrophysics Data System (ADS)

Ju, Guangxu; Highland, Matthew J.; Yanguas-Gil, Angel; Thompson, Carol; Eastman, Jeffrey A.; Zhou, Hua; Brennan, Sean M.; Stephenson, G. Brian; Fuoss, Paul H.

2017-03-01

We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.

Magnetic properties of epitaxial hexagonal HoFeO3 thin films

NASA Astrophysics Data System (ADS)

Wang, Xiao; Xiao, Zhuyun; Xu, Xiaoshan; Wang, Wenbin; Keavney, David; Liu, Yaohua; Cheng, X. M.

2014-03-01

Multiferroic materials exhibit multiple ferroic orders simultaneously and thus have great potential applications in information technology, sensing and actuation. Epitaxial hexagonal HoFeO3 (h-HFO) films are very promising candidates as multiferroic materials with room temperature ferromagnetism, because magnetic Ho3+ ions are expected to have stronger exchange interactions with Fe3+ ions than the well-studied h-LuFeO3 films. We report study of magnetic properties of epitaxial h-HFO thin films deposited using laser molecular beam epitaxy on Yttria-stabilized zirconia (YSZ) substrates. X-ray diffraction measurements confirmed the epitaxial registry and six-fold symmetry of the film. Temperature dependence of magnetization of the film measured by a Quantum Design SQUID magnetometer shows dominating paramagnetic characteristic. Element specific x-ray magnetic circular dichroism measurements performed at beamline 4-ID-C of the Advanced Photon Source show a ferromagnetic ordering of Fe and an exchange coupling between Ho3+ and Fe3+ ions. Work at BMC is supported by NSF Career award (DMR 1053854). Work at ANL is supported by US-DOE, Office of Science, BES (No. DE-AC02-06CH11357).

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

NASA Astrophysics Data System (ADS)

Heilmann, M.; Bashouti, M.; Riechert, H.; Lopes, J. M. J.

2018-04-01

Van der Waals heterostructures comprising of hexagonal boron nitride and graphene are promising building blocks for novel two-dimensional devices such as atomically thin transistors or capacitors. However, demonstrators of those devices have been so far mostly fabricated by mechanical assembly, a non-scalable and time-consuming method, where transfer processes can contaminate the surfaces. Here, we investigate a direct growth process for the fabrication of insulating hexagonal boron nitride on high quality epitaxial graphene using plasma assisted molecular beam epitaxy. Samples were grown at varying temperatures and times and studied using atomic force microscopy, revealing a growth process limited by desorption at high temperatures. Nucleation was mostly commencing from morphological defects in epitaxial graphene, such as step edges or wrinkles. Raman spectroscopy combined with x-ray photoelectron measurements confirm the formation of hexagonal boron nitride and prove the resilience of graphene against the nitrogen plasma used during the growth process. The electrical properties and defects in the heterostructures were studied with high lateral resolution by tunneling current and Kelvin probe force measurements. This correlated approach revealed a nucleation apart from morphological defects in epitaxial graphene, which is mediated by point defects. The presented results help understanding the nucleation and growth behavior during van der Waals epitaxy of 2D materials, and point out a route for a scalable production of van der Waals heterostructures.

Exposing high-energy surfaces by rapid-anneal solid phase epitaxy

DOE PAGES

Wang, Y.; Song, Y.; Peng, R.; ...

2017-08-08

The functional design of nanoscale transition metal oxide heterostructures depends critically on the growth of atomically flat epitaxial thin films. Much of the time, improved functionality is expected for heterostructures and surfaces with orientations that do not have the lowest surface free energy. For example, crystal faces with a high surface free energy, such as rutile (001) planes, frequently exhibit higher catalytic activities but are correspondingly harder to synthesize due to energy-lowering faceting transitions. We propose a broadly applicable rapid-anneal solid phase epitaxial synthesis approach for the creation of atomically flat, high surface free energy oxide heterostructures. We also demonstratemore » its efficacy via the synthesis of atomically flat, epitaxial RuO 2(001) films with a superior oxygen evolution activity, quantified by their lower onset potential and higher current density, relative to that of more common RuO 2(110) films.« less

GaN epitaxial layers grown on multilayer graphene by MOCVD

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

2018-04-01

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

Hot gas path component having cast-in features for near wall cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Carlos Miguel; Kottilingam, Srikanth Chandrudu; Lacy, Benjamin Paul

A hot gas path component includes a substrate having an outer surface and an inner surface. The inner surface of the substrate defines at least one interior space. At least a portion of the outer surface of the substrate includes a recess formed therein. The recess includes a bottom surface and a groove extending at least partially along the bottom surface of the recess. A cover is disposed within the recess and covers at least a portion of the groove. The groove is configured to channel a cooling fluid therethrough to cool the cover.

Support pedestals for interconnecting a cover and nozzle band wall in a gas turbine nozzle segment

DOEpatents

Yu, Yufeng Phillip; Itzel, Gary Michael; Webbon, Waylon Willard; Bagepalli, Radhakrishna; Burdgick, Steven Sebastian; Kellock, Iain Robertson

2002-01-01

A gas turbine nozzle segment has outer and inner band portions. Each band portion includes a nozzle wall, a cover and an impingement plate between the cover and nozzle wall defining two cavities on opposite sides of the impingement plate. Cooling steam is supplied to one cavity for flow through the apertures of the impingement plate to cool the nozzle wall. Structural pedestals interconnect the cover and nozzle wall and pass through holes in the impingement plate to reduce localized stress otherwise resulting from a difference in pressure within the chamber of the nozzle segment and the hot gas path and the fixed turbine casing surrounding the nozzle stage. The pedestals may be cast or welded to the cover and nozzle wall.

Improved Boat For Liquid-Phase Epitaxy

NASA Technical Reports Server (NTRS)

Connolly, John C.

1991-01-01

Liquid-phase epitaxial (LPE) growth boat redesigned. Still fabricated from ultra-high-purity graphite, but modified to permit easy disassembly and cleaning, along with improved wiping action for more complete removal of melt to reduce carry-over of gallium. Larger substrates and more uniform composition obtained.

Chest wall abscesses due to continuous application of silicone gel sheets for keloid management

PubMed Central

Tang, Hon-Lok; Lau, Keith K; Sam, Ramin; Ing, Todd S

2015-01-01

A patient with three episodes of chest wall abscesses as a result of 6 years of round-the-clock, uninterrupted (except during bathing) application of silicone gel sheets to a chest wall keloid is described. Two of the episodes occurred during hot weather. It is suggested that, in the space beneath the silicone sheet, the higher humidity and temperature, both generated as a result of prolonged sheeting, especially during hot weather, might have caused the keloid and its neighbouring skin to become soggy. This sogginess might have facilitated bacterial invasion. It is suggested that some sheeting-free time during a 24 h period might be indicated so that a keloid and its adjacent skin have the time to recover from their sheeting-induced sogginess. A sheeting-free period might especially be needed in the face of sweat accumulation beneath the silicone sheet. PMID:25920733

Chest wall abscesses due to continuous application of silicone gel sheets for keloid management.

PubMed

Tang, Hon-Lok; Lau, Keith K; Sam, Ramin; Ing, Todd S

2015-04-28

A patient with three episodes of chest wall abscesses as a result of 6 years of round-the-clock, uninterrupted (except during bathing) application of silicone gel sheets to a chest wall keloid is described. Two of the episodes occurred during hot weather. It is suggested that, in the space beneath the silicone sheet, the higher humidity and temperature, both generated as a result of prolonged sheeting, especially during hot weather, might have caused the keloid and its neighbouring skin to become soggy. This sogginess might have facilitated bacterial invasion. It is suggested that some sheeting-free time during a 24 h period might be indicated so that a keloid and its adjacent skin have the time to recover from their sheeting-induced sogginess. A sheeting-free period might especially be needed in the face of sweat accumulation beneath the silicone sheet. 2015 BMJ Publishing Group Ltd.

Epitaxy: Programmable Atom Equivalents Versus Atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Mary X.; Seo, Soyoung E.; Gabrys, Paul A.

The programmability of DNA makes it an attractive structure-directing ligand for the assembly of nanoparticle superlattices in a manner that mimics many aspects of atomic crystallization. However, the synthesis of multilayer single crystals of defined size remains a challenge. Though previous studies considered lattice mismatch as the major limiting factor for multilayer assembly, thin film growth depends on many interlinked variables. Here, a more comprehensive approach is taken to study fundamental elements, such as the growth temperature and the thermodynamics of interfacial energetics, to achieve epitaxial growth of nanoparticle thin films. Under optimized equilibrium conditions, single crystal, multilayer thin filmsmore » can be synthesized over 500 × 500 μm2 areas on lithographically patterned templates. Importantly, these superlattices follow the same patterns of crystal growth demonstrated in thin film atomic deposition, allowing for these processes to be understood in the context of well-studied atomic epitaxy, and potentially enabling a nanoscale model to study fundamental crystallization processes.« less

Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlattices.

PubMed

Walravens, Willem; De Roo, Jonathan; Drijvers, Emile; Ten Brinck, Stephanie; Solano, Eduardo; Dendooven, Jolien; Detavernier, Christophe; Infante, Ivan; Hens, Zeger

2016-07-26

Two dimensional superlattices of epitaxially connected quantum dots enable size-quantization effects to be combined with high charge carrier mobilities, an essential prerequisite for highly performing QD devices based on charge transport. Here, we demonstrate that surface active additives known to restore nanocrystal stoichiometry can trigger the formation of epitaxial superlattices of PbSe and PbS quantum dots. More specifically, we show that both chalcogen-adding (sodium sulfide) and lead oleate displacing (amines) additives induce small area epitaxial superlattices of PbSe quantum dots. In the latter case, the amine basicity is a sensitive handle to tune the superlattice symmetry, with strong and weak bases yielding pseudohexagonal or quasi-square lattices, respectively. Through density functional theory calculations and in situ titrations monitored by nuclear magnetic resonance spectroscopy, we link this observation to the concomitantly different coordination enthalpy and ligand displacement potency of the amine. Next to that, an initial ∼10% reduction of the initial ligand density prior to monolayer formation and addition of a mild, lead oleate displacing chemical trigger such as aniline proved key to induce square superlattices with long-range, square micrometer order; an effect that is the more pronounced the larger the quantum dots. Because the approach applies to PbS quantum dots as well, we conclude that it offers a reproducible and rational method for the formation of highly ordered epitaxial quantum dot superlattices.

Ferromagnetic order in epitaxially strained LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Fuchs, D.; Pinta, C.; Schwarz, T.; Schweiss, P.; Nagel, P.; Schuppler, S.; Schneider, R.; Merz, M.; Roth, G.; v. Löhneysen, H.

2007-04-01

LaCoO3 films grown epitaxially on ⟨001⟩ oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates by pulsed laser deposition exhibit ferromagnetic ordering below a critical temperature, Tc , of 85K . Polycrystalline films of LaCoO3 prepared in the same way did not show ferromagnetic order down to T≈5K , and their temperature dependent susceptibility was identical to that of bulk LaCoO3 . The ferromagnetism in epitaxial films is not simply a property of the surface region, rather it extends over the complete film thickness, as shown by the linear increase of the saturated magnetic moment with increasing film thickness. We discuss this surprising result in terms of epitaxial tensile strain via the properly chosen substrate inducing ferromagnetic order.

Enceladus' Geysers and Small-scale Thermal Hot Spots: Spatial Correlations and Implications

NASA Astrophysics Data System (ADS)

Porco, C.; Helfenstein, P.; Goguen, J.

2016-12-01

The geysering south polar terrain (SPT) of Enceladus has been a major focus of the Cassini mission ever since Cassini's first sighting of it in images taken in early 2005 (1). A high resolution imaging survey of the region conducted over the course of seven years resulted in the identification of 100 geysers erupting from the four main fractures crossing the SPT (2). The Cassini Visual and Infrared Mapping Spectrometer (VIMS) detected enhanced thermal emission arising from these fractures and taking the form of small-scale ( ≤ 10 meter) discrete spots (3,4). Four of these hot spot observations have already been spatially associated with four geysers on the Baghdad Sulcus fracture (2). The inferred spatial correlation and small size of each hot spot eliminated shear heating along the near-surface walls of the fractures as the source of the heat and erupting materials. Instead, it was concluded that condensation of vapor (and liquid), and the deposition of latent heat, on the near-surface vent walls, and the subsequent conduction of that heat to the surface, was the source of the observed thermal emission. This indicated that the hot spots are the secondary signature of a geyser eruption process deeply rooted in the moon's sub-surface liquid water reservoir (2). We extend the examination of these relationships to include seven additional VIMS observations of hot spots. At the present time, we have associated a total of 11 VIMS hot spot observations with 13 (maybe 14) geysers distributed over all four tiger stripe fractures. It's not uncommon for the locations of multiple (often two but sometimes three) surveyed geysers to overlap within estimated uncertainties. This can occur when they have different 3D orientations, making them identifiable in our 2014 survey as distinct features; However, the raw, thermally unmodeled VIMS maps, with their (relatively) coarse resolution, may register at that location only one corresponding hot spot. It is also possible that

Electron Microscopy of Staphylococcus aureus Cell Wall Lysis

PubMed Central

Virgilio, R.; González, C.; Muñoz, Nubia; Mendoza, Silvia

1966-01-01

Virgilio, Rafael (Escuela de Química y Farmacia, Universidad de Chile, Santiago, Chile), C. González, Nubia Muñoz, and Silvia Mendoza. Electron microscopy of Staphylococcus aureus cell wall lysis. J. Bacteriol. 91:2018–2024. 1966.—A crude suspension of Staphylococcus aureus cell walls (strain Cowan III) in buffer solution was shown by electron microscopy to lyse slightly after 16 hr, probably owing to the action of autolysin. The lysis was considerably faster and more intense after the addition of lysozyme. A remarkable reduction in thickness and rigidity of the cell walls, together with the appearance of many irregular protrusions in their outlines, was observed after 2 hr; after 16 hr, there remained only a few recognizable cell wall fragments but many residual particulate remnants. When autolysin was previously inactivated by trypsin, there was a complete inhibition of the lytic action of lysozyme; on the other hand, when autolysin was inactivated by heat and lysozyme was added, a distinct decrease in the thickness of the cell walls was observed, but there was no destruction of the walls. The lytic action of lysozyme, after treatment with hot 5% trichloroacetic acid, gave rise to a marked dissolution of the structure of the cell walls, which became lost against the background, without, however, showing ostensible alteration of wall outlines. From a morphological point of view, the lytic action of autolysin plus lysozyme was quite different from that of trichloroacetic acid plus lysozyme, as shown by electron micrographs, but in both cases it was very intense. This would suggest different mechanisms of action for these agents. Images PMID:5939482

Electron microscopy of Staphylococcus aureus cell wall lysis.

PubMed

Virgilio, R; González, C; Muñoz, N; Mendoza, S

1966-05-01

Virgilio, Rafael (Escuela de Química y Farmacia, Universidad de Chile, Santiago, Chile), C. González, Nubia Muñoz, and Silvia Mendoza. Electron microscopy of Staphylococcus aureus cell wall lysis. J. Bacteriol. 91:2018-2024. 1966.-A crude suspension of Staphylococcus aureus cell walls (strain Cowan III) in buffer solution was shown by electron microscopy to lyse slightly after 16 hr, probably owing to the action of autolysin. The lysis was considerably faster and more intense after the addition of lysozyme. A remarkable reduction in thickness and rigidity of the cell walls, together with the appearance of many irregular protrusions in their outlines, was observed after 2 hr; after 16 hr, there remained only a few recognizable cell wall fragments but many residual particulate remnants. When autolysin was previously inactivated by trypsin, there was a complete inhibition of the lytic action of lysozyme; on the other hand, when autolysin was inactivated by heat and lysozyme was added, a distinct decrease in the thickness of the cell walls was observed, but there was no destruction of the walls. The lytic action of lysozyme, after treatment with hot 5% trichloroacetic acid, gave rise to a marked dissolution of the structure of the cell walls, which became lost against the background, without, however, showing ostensible alteration of wall outlines. From a morphological point of view, the lytic action of autolysin plus lysozyme was quite different from that of trichloroacetic acid plus lysozyme, as shown by electron micrographs, but in both cases it was very intense. This would suggest different mechanisms of action for these agents.

Epitaxial growth of VO2 by periodic annealing

NASA Astrophysics Data System (ADS)

Tashman, J. W.; Lee, J. H.; Paik, H.; Moyer, J. A.; Misra, R.; Mundy, J. A.; Spila, T.; Merz, T. A.; Schubert, J.; Muller, D. A.; Schiffer, P.; Schlom, D. G.

2014-02-01

We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

Rhombohedral Super Hetero Epitaxy of Cubic SiGe on Trigonal c-plane Sapphire

NASA Technical Reports Server (NTRS)

Choi, Sang H.; Duzik, Adam J.

2017-01-01

New rhombohedral super-hetero-epitaxy technology was developed at NASA. This epitaxy technology enables the growth of unprecedented cubic-trigonal hybrid single crystal structures with lattice match on sapphire (Al2O3) substrates, hence with little strain and very few defects at the interface.

Rapid Fabrication Techniques for Liquid Rocket Channel Wall Nozzles

NASA Technical Reports Server (NTRS)

Gradl, Paul R.

2016-01-01

The functions of a regeneratively-cooled nozzle are to (1) expand combustion gases to increase exhaust gas velocity while, (2) maintaining adequate wall temperatures to prevent structural failure, and (3) transfer heat from the hot gases to the coolant fluid to promote injector performance and stability. Regeneratively-cooled nozzles are grouped into two categories: tube-wall nozzles and channel wall nozzles. A channel wall nozzle is designed with an internal liner containing a series of integral coolant channels that are closed out with an external jacket. Manifolds are attached at each end of the nozzle to distribute coolant to and away from the channels. A variety of manufacturing techniques have been explored for channel wall nozzles, including state of the art laser-welded closeouts and pressure-assisted braze closeouts. This paper discusses techniques that NASA MSFC is evaluating for rapid fabrication of channel wall nozzles that address liner fabrication, slotting techniques and liner closeout techniques. Techniques being evaluated for liner fabrication include large-scale additive manufacturing of freeform-deposition structures to create the liner blanks. Abrasive water jet milling is being evaluated for cutting the complex coolant channel geometries. Techniques being considered for rapid closeout of the slotted liners include freeform deposition, explosive bonding and Cold Spray. Each of these techniques, development work and results are discussed in further detail in this paper.

HotRegion: a database of predicted hot spot clusters.

PubMed

Cukuroglu, Engin; Gursoy, Attila; Keskin, Ozlem

2012-01-01

Hot spots are energetically important residues at protein interfaces and they are not randomly distributed across the interface but rather clustered. These clustered hot spots form hot regions. Hot regions are important for the stability of protein complexes, as well as providing specificity to binding sites. We propose a database called HotRegion, which provides the hot region information of the interfaces by using predicted hot spot residues, and structural properties of these interface residues such as pair potentials of interface residues, accessible surface area (ASA) and relative ASA values of interface residues of both monomer and complex forms of proteins. Also, the 3D visualization of the interface and interactions among hot spot residues are provided. HotRegion is accessible at http://prism.ccbb.ku.edu.tr/hotregion.

Image-guided brachytherapy for cervical cancer: analysis of D2 cc hot spot in three-dimensional and anatomic factors affecting D2 cc hot spot in organs at risk.

PubMed

Kim, Robert Y; Dragovic, Alek F; Whitley, Alexander C; Shen, Sui

2014-01-01

To analyze the D2 cc hot spot in three-dimensional CT and anatomic factors affecting the D2 cc hot spot in organs at risk (OARs). Thirty-one patients underwent pelvic CT scan after insertion of the applicator. High-dose-rate treatment planning was performed with standard loading patterns. The D2 cc structures in OARs were generated in three dimensional if the total equivalent dose in 2 Gy exceeded our defined dose limits (hot spot). The location of D2 cc hot spot was defined as the center of the largest D2 cc fragment. The relationship between the hot spot and the applicator position was reported in Digital Imaging and Communication in Medicine coordinates. The location of sigmoid, small bowel, and bladder D2 cc hot spots was around the endocervix: The mean location of sigmoid hot spot for lateral view was 1.6 cm posteriorly and 2.3 cm superiorly (Y, 1.6 and Z, 2.3), small bowel was 1.6 cm anteriorly and 2.7 cm superiorly (Y, -1.6 and Z, 2.7). The mean location of bladder hot spot was 1.6 cm anteriorly and 1.6 cm superiorly (Y, -1.6 and Z, 1.6). These hot spots were near the plane of Point A (X, 2.0 or -2.0; Y, 0; and Z, 2.0). The mean location of rectal hot spot was 1.6 cm posteriorly and 1.9 cm inferiorly (Y, 1.6 and Z, -1.9). D2 cc hot spot was affected by uterine wall thickness, uterine tandem position, fibroids, bladder fullness, bowel gas, and vaginal packing. Because of the location of the D2 cc hot spots, larger tumors present a challenge for adequate tumor coverage with a conventional brachytherapy applicator without an interstitial implant. Additionally, anatomic factors were identified which affect the D2 cc hot spot in OARs. Copyright © 2014 American Brachytherapy Society. Published by Elsevier Inc. All rights reserved.

Long-range stripe nanodomains in epitaxial (110) BiFeO 3 thin films on (100) NdGaO 3 substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Yogesh; Agarwal, Radhe; Phatak, Charudatta

Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO 3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO 3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La 0.67Sr 0.33CoO 3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change inmore » the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. Finally, this long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.« less

Long-range stripe nanodomains in epitaxial (110) BiFeO 3 thin films on (100) NdGaO 3 substrate

DOE PAGES

Sharma, Yogesh; Agarwal, Radhe; Phatak, Charudatta; ...

2017-07-07

Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO 3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO 3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La 0.67Sr 0.33CoO 3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change inmore » the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. Finally, this long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.« less

Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

NASA Astrophysics Data System (ADS)

Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

2018-06-01

Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

An atomic carbon source for high temperature molecular beam epitaxy of graphene.

PubMed

Albar, J D; Summerfield, A; Cheng, T S; Davies, A; Smith, E F; Khlobystov, A N; Mellor, C J; Taniguchi, T; Watanabe, K; Foxon, C T; Eaves, L; Beton, P H; Novikov, S V

2017-07-26

We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. Atomic force microscopy measurements reveal the formation of hexagonal moiré patterns when graphene monolayers are grown on hBN flakes. The Raman spectra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atomic carbon source are similar, whilst the nature of the carbon aggregates is different - graphitic with the sublimation carbon source and amorphous with the atomic carbon source. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source.

Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.

PubMed

Kim, Eun Sung; Hwang, Jae-Yeol; Lee, Kyu Hyoung; Ohta, Hiromichi; Lee, Young Hee; Kim, Sung Wng

2017-02-01

Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi 0.5 Sb 1.5 Te 3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

NASA Technical Reports Server (NTRS)

Krasowski, Michael J.

2008-01-01

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform

Molecular-Beam-Epitaxy Program

NASA Technical Reports Server (NTRS)

Sparks, Patricia D.

1988-01-01

Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

NASA Astrophysics Data System (ADS)

Andersen, Tassie K.; Cook, Seyoung; Benda, Erika; Hong, Hawoong; Marks, Laurence D.; Fong, Dillon D.

2018-03-01

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. The high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO3 oxide perovskites containing elements from both the metalorganic source and a traditional effusion cell.

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

OM-VPE growth of Mg-doped GaAs. [OrganoMetallic-Vapor Phase Epitaxy

NASA Technical Reports Server (NTRS)

Lewis, C. R.; Dietze, W. T.; Ludowise, M. J.

1982-01-01

The epitaxial growth of Mg-doped GaAs by the organometallic vapor phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.

Applicability of tungsten/EUROFER blanket module for the DEMO first wall

NASA Astrophysics Data System (ADS)

Igitkhanov, Yu.; Bazylev, B.; Landman, I.; Boccaccini, L.

2013-07-01

In this paper we analyse a sandwich-type blanket configuration of W/EUROFER for DEMO first wall under steady-state normal operation and off-normal conditions, such as vertical displacements and runaway electrons. The heat deposition and consequent erosion of the tungsten armour is modelled under condition of helium cooling of the first wall blanket module and by taking into account the conversion of the magnetic energy stored in the runaway electron current into heat through the ohmic dissipation of the return current induced in the metallic armour structure. It is shown that under steady-state DEMO operation the first wall sandwich type module will tolerate heat loads up to ˜14 MW/m2. It will also sustain the off-normal events, apart from the hot vertical displacement events, which will melt the tungsten armour surface.

Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate

NASA Astrophysics Data System (ADS)

Krukovskyi, R.; Mykhashchuk, Y.; Kost, Y.; Krukovskyi, S.; Saldan, I.

2017-04-01

Epitaxial structures based on InP are widely used to manufacture a number of devices such as microwave transistors, light-emitting diodes, lasers and Gunn diodes. However, their temporary instability caused by heterogeneity of resistivity along the layer thickness and the influence of various external or internal factors prompts the need for the development of a new reliable technology for their preparation. Weak doping by Yb, Al and Sn together with modulation of the cooling rate applied to prepare InP epitaxial layers is suggested to be adopted within the liquid phase epitaxy (LPE) method. The experimental results confirm the optimized conditions created to get a uniform electron concentration in the active n-InP layer. A sharp profile of electron concentration in the n+-InP(substrate)/n-InP/n+-InP epitaxial structure was observed experimentally at the proposed modulated cooling rate of 0.3 °С-1.5 °С min-1. The proposed technological method can be used to control the electrical and physical properties of InP epitaxial layers to be used in Gunn diodes.

Exploring Ag(111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study

PubMed Central

Gao, Junfeng; Zhang, Gang; Zhang, Yong-Wei

2016-01-01

Stanene, a two-dimensional topological insulator composed of Sn atoms in a hexagonal lattice, is a promising contender to Si in nanoelectronics. Currently it is still a significant challenge to achieve large-area, high-quality monolayer stanene. We explore the potential of Ag(111) surface as an ideal substrate for the epitaxial growth of monolayer stanene. Using first-principles calculations, we study the stability of the structure of stanene in different epitaxial relations with respect to Ag(111) surface, and also the diffusion behavior of Sn adatom on Ag(111) surface. Our study reveals that: (1) the hexagonal structure of stanene monolayer is well reserved on Ag(111) surface; (2) the height of epitaxial stanene monolayer is comparable to the step height of the substrate, enabling the growth to cross the surface step and achieve a large-area stanene; (3) the perfect lattice structure of free-standing stanene can be achieved once the epitaxial stanene monolayer is detached from Ag(111) surface; and finally (4) the diffusion barrier of Sn adatom on Ag(111) surface is found to be only 0.041 eV, allowing the epitaxial growth of stanene monolayer even at low temperatures. Our above revelations strongly suggest that Ag(111) surface is an ideal candidate for growing large-area, high-quality monolayer stanene. PMID:27373464

A&M. TAN607. Structural supports for biparting door on east wall ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

A&M. TAN-607. Structural supports for biparting door on east wall of hot shop. Special services cubicle shielding. Ralph M. Parsons 902-3-ANP-607-S141. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-60-693-106785 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

Theoretical prediction of gold vein location in deposits originated by a wall magma intrusion

NASA Astrophysics Data System (ADS)

Martin, Pablo; Maass-Artigas, Fernando; Cortés-Vega, Luis

2016-05-01

The isotherm time-evolution resulting from the intrusion of a hot dike in a cold rock is analized considering the general case of nonvertical walls. This is applied to the theoretical prediction of the gold veins location due to isothermal evolution. As in previous treatments earth surface effects are considered and the gold veins are determined by the envelope of the isotherms. The locations of the gold veins in the Callao mines of Venezuela are now well predicted. The new treatment is now more elaborated and complex that in the case of vertical walls, performed in previous papers, but it is more adequated to the real cases as the one in El Callao, where the wall is not vertical.

Photon Transport in One-Dimensional Incommensurately Epitaxial CsPbX 3 Arrays

DOE PAGES

Wang, Yiping; Sun, Xin; Shivanna, Ravichandran; ...

2016-11-16

One-dimensional nanoscale epitaxial arrays serve as a great model in studying fundamental physics and for emerging applications. With an increasing focus laid on the Cs-based inorganic halide perovskite out of its outstanding material stability, we have applied vapor phase epitaxy to grow well aligned horizontal CsPbX 3 (X: Cl, Br, or I or their mixed) nanowire arrays in large scale on mica substrate. The as-grown nanowire features a triangular prism morphology with typical length ranging from a few tens of micrometers to a few millimeters. Structural analysis reveals that the wire arrays follow the symmetry of mica substrate through incommensuratemore » epitaxy, paving a way for a universally applicable method to grow a broad family of halide perovskite materials. We have studied the unique photon transport in the one-dimensional structure in the all-inorganic Cs-based perovskite wires via temperature dependent and spatially resolved photoluminescence. Furthermore, epitaxy of well oriented wire arrays in halide perovskite would be a promising direction for enabling the circuit-level applications of halide perovskite in high-performance electro-optics and optoelectronics.« less

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.

PubMed

Dong, Zhenning; André, Yamina; Dubrovskii, Vladimir G; Bougerol, Catherine; Leroux, Christine; Ramdani, Mohammed R; Monier, Guillaume; Trassoudaine, Agnès; Castelluci, Dominique; Gil, Evelyne

2017-03-24

Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h -1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.

Epitaxy of mercury-based high temperature superconducting films on oxide and metal substrates

NASA Astrophysics Data System (ADS)

Xie, Yi-Yuan

High-Tc superconducting (HTS) cuprates are highly anisotropic thus epitaxy along certain crystalline directions is essential to realize high-current-carrying capability at temperatures above 77 K. Hg-based HTS (Hg-HTS) cuprates have the record-high Tc up to 135 K, therefore are of great interest for fundamental research and practical applications. However, growth Of epitaxial Hg-HTS films is extremely difficult in conventional thermal-reaction process since Hg is highly volatile. Motivated by this, we first developed a cation-exchange process for growing epitaxial Hg-HTS films, which involves two steps: selection of precursor matrices with predesigned structure and composition followed by cation-exchange processing. New materials are formed via "atomic surgery" on an existing structure rather than thermal reaction among amorphous oxides in conventional process, thus the structural features of the precursor are inherited by the new material. Using epitaxial Tl-based HTS films as precursor and annealing them in Hg-vapor, epitaxial Hg-HTS films with superior quality have been obtained. This success encouraged us to develop epitaxy on metal tapes for coated conductors and On large-area wafers for electronic devices. For coated conductors, we addressed three critical issues: epitaxy on metal substrates, enhancement of in-field Jcs and scale-up in thickness and length. First, using a fabrication scheme that combines two processes: cation-exchange and fast-temperature-ramping-annealing, epitaxial HgBa2CaCu2O6+delta films were grown on rolling-assisted-biaxially-textured Ni substrates buffered with CeO 2/YSZ/CeO2 for the first time. We fabricated HgBa2CaCu 2O6+delta coated conductors with Tc = 122--124 K and self-field Jc > 1 x 106A/cm2 at 92 K which are record-high for HTS coated conductors. Second, we demonstrated improved in-field J cs via overdoping HgBa2CaCu 2O6+delta films (by means Of charge "overdoped"), heavy-ion-irradiation and substrate engineering. Finally

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Gale, R. P.; Mcclelland, R. W.; Fan, J. C. C.; Bozler, C. O.

1982-01-01

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Wafer bonded epitaxial templates for silicon heterostructures

DOEpatents

Atwater, Jr., Harry A.; Zahler, James M [Pasadena, CA; Morral, Anna Fontcubera I [Paris, FR

2008-03-11

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Wafer bonded epitaxial templates for silicon heterostructures

NASA Technical Reports Server (NTRS)

Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

2008-01-01

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template.

PubMed

Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

2016-10-01

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi 2 Se 3 epitaxial heterostructures by using two-dimensional (2D) Bi 2 Se 3 nanoplates as soft templates. The dangling bond-free surface of 2D Bi 2 Se 3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi 2 Se 3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi 2 Se 3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi 2 Se 3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi 2 Se 3 nanoplates. We further show that the resulted PbSe/Bi 2 Se 3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi 2 Se 3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template

PubMed Central

Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

2016-01-01

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi2Se3 epitaxial heterostructures by using two-dimensional (2D) Bi2Se3 nanoplates as soft templates. The dangling bond–free surface of 2D Bi2Se3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi2Se3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi2Se3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi2Se3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi2Se3 nanoplates. We further show that the resulted PbSe/Bi2Se3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi2Se3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions. PMID:27730211

Graphene nanoribbons epitaxy on boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xiaobo; Wang, Shuopei; Wu, Shuang

2016-03-14

In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BNmore » substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.« less

Influence of strong perturbations on wall-bounded flows

NASA Astrophysics Data System (ADS)

Buxton, O. R. H.; Ewenz Rocher, M.; Rodríguez-López, E.

2018-01-01

Single-point hot-wire measurements are made downstream of a series of spanwise repeating obstacles that are used to generate an artificially thick turbulent boundary layer. The measurements are made in the near field, in which the turbulent boundary layer is beginning to develop from the wall-bounded wakes of the obstacles. The recent paper of Rodríguez-López et al. [E. Rodríguez-López et al., Phys. Rev. Fluids 1, 074401 (2016), 10.1103/PhysRevFluids.1.074401] broadly categorized the mechanisms by which canonical turbulent boundary layers eventually develop from wall-bounded wakes into two distinct mechanisms, the wall-driven and wake-driven mechanisms. In the present work we attempt to identify the geometric parameters of tripping arrays that trigger these two mechanisms by examining the spectra of the streamwise velocity fluctuations and the intermittent outer region of the flow. Using a definition reliant upon the magnitude of the velocity fluctuations, an intermittency function is devised that can discriminate between turbulent and nonturbulent flow. These results are presented along with the spectra in order to try to ascertain which aspects of a trip's geometry are more likely to favor the wall-driven or wake-driven mechanism. The geometrical aspects of the trips tested are the aspect ratio, the total blockage, and the blockage at the wall. The results indicate that the presence, or not, of perforations is the most significant factor in affecting the flow downstream. The bleed of fluid through the perforations reenergizes the mean recirculation and leads to a narrower intermittent region with a more regular turbulent-nonturbulent interface. The near-wall turbulent motions are found to recover quickly downstream of all of the trips with a wall blockage of 50%, but a clear influence of the outer fluctuations, generated by the tip vortices of the trips, is observed in the near-wall region for the high total blockage trips. The trip with 100% wall blockage is

Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

DOE PAGES

Andersen, Tassie K.; Cook, Seyoung; Benda, Erika; ...

2018-03-08

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. In conclusion, the high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO 3 oxide perovskites containing elements from both themore » metalorganic source and a traditional effusion cell.« less

Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andersen, Tassie K.; Cook, Seyoung; Benda, Erika

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. In conclusion, the high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO 3 oxide perovskites containing elements from both themore » metalorganic source and a traditional effusion cell.« less

Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

2016-11-01

Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

DOE PAGES

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; ...

2016-01-28

High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grownmore » on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.« less

Epitaxial growth of iridate pyrochlore Nd 2Ir 2O 7 films

DOE PAGES

Gallagher, J. C.; Esser, B. D.; Morrow, R.; ...

2016-02-29

Epitaxial films of the pyrochlore Nd 2Ir 2O 7 have been grown on (111)-oriented yttria-stabilized zirconia (YSZ) substrates by off-axis sputtering followed by post-growth annealing. X-ray diffraction (XRD) results demonstrate phase-pure epitaxial growth of the pyrochlore films on YSZ. Scanning transmission electron microscopy (STEM) investigation of an Nd 2Ir 2O 7 film with a short post-annealing provides insight into the mechanism for crystallization of Nd 2Ir 2O 7 during the post-annealing process. STEM images reveal clear pyrochlore ordering of Nd and Ir in the films. As a result, the epitaxial relationship between the YSZ and Nd 2Ir 2O 7 ismore » observed clearly while some interfacial regions show a thin region with polycrystalline Ir nanocrystals.« less

Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films

NASA Astrophysics Data System (ADS)

Miao, J.; Yuan, J.; Wu, H.; Yang, S. B.; Xu, B.; Cao, L. X.; Zhao, B. R.

2007-01-01

Epitaxial Ba0.15Zr0.85TiO3 (BZT) ferroelectric thin films with (001), (011), and (111) orientations were, respectively, grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrates by pulsed laser deposition method. The dc electric-field dependence of permittivity and dielectric loss of (001)-, (011)-, and (111)-oriented BZT/LSMO heterostructures obeys the Johnson formula, and the ac electric-field dependence of that obeys the Rayleigh law under the subswitching field region. The anisotropic dielectric properties are attributed to the higher mobility of the charge carriers, the concentration of mobile interfacial domain walls, and boundaries in the (111)-oriental films than in the (110)- and (100)-oriented films.

Growth of vertically aligned single-walled carbon nanotubes with metallic chirality through faceted FePt-Au catalysts

NASA Astrophysics Data System (ADS)

Ohashi, Toshiyuki; Iwama, Hiroki; Shima, Toshiyuki

2016-02-01

Direct synthesis of vertically aligned metallic single-walled carbon nanotubes (m-SWCNT forests) is a difficult challenge. We have successfully synthesized m-SWCNT forests using faceted iron platinum-gold catalysts epitaxially grown on a single crystalline magnesium oxide substrate. The metallic content of the forests estimated by Raman spectroscopy reaches 90%. From the standpoint of growth rate of the forests, the growth mechanism is probably based on the catalyst of solid state. It is suggested that preferential growth of m-SWCNTs is achieved when both factors are satisfied, namely, {111} dominant octahedral facet and ideal size (fine particles) of FePt particles.

Simulator test to study hot-flow problems related to a gas cooled reactor

NASA Technical Reports Server (NTRS)

Poole, J. W.; Freeman, M. P.; Doak, K. W.; Thorpe, M. L.

1973-01-01

An advance study of materials, fuel injection, and hot flow problems related to the gas core nuclear rocket is reported. The first task was to test a previously constructed induction heated plasma GCNR simulator above 300 kW. A number of tests are reported operating in the range of 300 kW at 10,000 cps. A second simulator was designed but not constructed for cold-hot visualization studies using louvered walls. A third task was a paper investigation of practical uranium feed systems, including a detailed discussion of related problems. The last assignment resulted in two designs for plasma nozzle test devices that could be operated at 200 atm on hydrogen.

Determination of optimal tool parameters for hot mandrel bending of pipe elbows

NASA Astrophysics Data System (ADS)

Tabakajew, Dmitri; Homberg, Werner

2018-05-01

Seamless pipe elbows are important components in mechanical, plant and apparatus engineering. Typically, they are produced by the so-called `Hamburg process'. In this hot forming process, the initial pipes are subsequently pushed over an ox-horn-shaped bending mandrel. The geometric shape of the mandrel influences the diameter, bending radius and wall thickness distribution of the pipe elbow. This paper presents the numerical simulation model of the hot mandrel bending process created to ensure that the optimum mandrel geometry can be determined at an early stage. A fundamental analysis was conducted to determine the influence of significant parameters on the pipe elbow quality. The chosen methods and approach as well as the corresponding results are described in this paper.

Magnesia tuned multi-walled carbon nanotubes–reinforced alumina nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, Iftikhar, E-mail: ifahmad@ksu.edu.sa; Islam, Mohammad; Dar, Mushtaq Ahmad

2015-01-15

Magnesia tuned alumina ceramic nanocomposites, reinforced with multi-walled carbon nanotubes, were condensed using pressureless and hot-press sintering processes. Densification, microstructure and mechanical properties of the produced nanocomposites were meticulously investigated. Electron microscopy studies revealed the homogenous carbon nanotube dispersion within the alumina matrix and confirmed the retention of carbon nanotubes' distinctive tubular morphology and nanoscale features during the extreme mixing/sintering processes. Pressureless sintered nanocomposites showed meagre mechanical responses due to the poorly-integrated microstructures with a slight improvement upon magnesia addition. Conversely, both the magnesia addition and application of hot-press sintering technique resulted in the nanocomposite formation with near-theoretical densities (~more » 99%), well-integrated microstructures and superior mechanical properties. Hot-press sintered nanocomposites incorporating 300 and 600 ppm magnesia exhibited an increase in hardness (10 and 11%), flexural strength (5 and 10%) and fracture toughness (15 and 20%) with respect to similar magnesia-free samples. Compared to monolithic alumina, a decent rise in fracture toughness (37%), flexural strength (22%) and hardness (20%) was observed in the hot-press sintered nanocomposites tuned with merely 600 ppm magnesia. Mechanically superior hot-press sintered magnesia tailored nanocomposites are attractive for several load-bearing structural applications. - Highlights: • MgO tailored Al{sub 2}O{sub 3}–2 wt.% CNT nanocomposites are presented. • The role of MgO and sintering on nanocomposite structures and properties was studied. • Well-dispersed CNTs maintained their morphology/structure after harsh sintering. • Hot-pressing and MgO led nanocomposites to higher properties/unified structures. • MgO tuned composites showed higher toughness (37%) and strength (22%) than Al{sub 2}O{sub 3}.« less

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wei, Hongling; Chen, Zhengwei; Wu, Zhenping; Cui, Wei; Huang, Yuanqi; Tang, Weihua

2017-11-01

Ga2O3 with a wide bandgap of ˜ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It's also demonstrated that the CuGa2O4 film has a bandgap of ˜ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

NASA Astrophysics Data System (ADS)

Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

2018-03-01

Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films

DOE PAGES

Han, Myung-Geun; Garlow, Joseph A.; Bugnet, Matthieu; ...

2016-09-02

Polar discontinuity at interfaces plays deterministic roles in charge transport, magnetism, and even superconductivity of functional oxides. To date, most polar discontinuity problems have been explored in hetero-interfaces between two dissimilar materials. Here, we show that charged domain walls (CDWs) in epitaxial thin films of ferroelectric PbZr 0.2Ti 0.8O 3 are strongly coupled to polar interfaces through the formation of ½<101>{h0l} type crystallographic shear planes (CSPs). Using atomic resolution imaging and spectroscopy we illustrate that the CSPs consist of both conservative and nonconservative segments when coupled to the CDWs, where necessary compensating charges for stabilizing the CDWs are associated withmore » vacancies at the CSPs. Lasly, the CDW/CSP coupling yields an atomically narrow domain walls, consisting of a single atomic layer of oxygen. This study shows that the CDW/CSP coupling is a fascinating venue to develop emergent material properties.« less

Hot Mix Asphalt for Intersections in Hot Climates

DOT National Transportation Integrated Search

1998-03-01

Rutting of hot mix asphalt (HMA) pavement at or near intersections is very common both in cold and hot climates. Obviously, the problem is more acute in hot climates compared to cold climates because the stiffness of HMA decreases with increase in pa...

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

NASA Astrophysics Data System (ADS)

Lee, K.; Lee, T. Y.; Yang, S. M.; Lee, D. H.; Park, J.; Chae, S. C.

2018-05-01

We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures.

In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

NASA Astrophysics Data System (ADS)

Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

2016-05-01

Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

F-100A with nose through hangar wall following Scott Crossfield's emergency landing

NASA Technical Reports Server (NTRS)

1954-01-01

A NACA High-Speed Flight Station hangar wall meets the nose of a North American F-100A Super Sabre airplane on 8 September 1954. On the first NACA research flight of airplane #52-5778, pilot Scott Crossfield had to make a powerless 'deadstick' landing following an engine fire warning. This was something North American's own test pilots doubted could be done, for the early F-100 lacked flaps and landed 'hot as hell.' Crossfield followed up the flawless approach and landing by coasting off the lakebed, up the ramp, and then through the front door of the NACA hangar, frantically trying to stop the F-100A, which had used up its emergency brake power. Crossfield missed the NACA X fleet, but crunched the nose of the aircraft through the hangar's side wall. It is reported that Chuck Yeager then proclaimed that while the sonic wall had been his, the hangar wall was Crossfield's! The hangar wall and the F-100A were repaired, and the airplane flew again.

Thermal performance characterization of residential wall systems using a calibrated hot box with airflow induced by differential pressures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, D.C.; Ober, D.G.; Goodrow, J.T.

1995-09-01

ASTM E 283 ad ASTM E 1424 in conjunction with ASTM C 976 were used to study the effect of airflow on thermal performance of the wall. A typical residential 2 {times} 4 stud wall was constructed and placed on top of a subfloor, making a 2.44 {times} 2.74 m (8 by 9 ft) test specimen. This base wall assembly was then covered with two types of XPS sheathing, various housewraps, a 15{number_sign} felt, and a polyethylene vapor retarder film in 40 different configurations and tested individually per ASTM E 283 and per ASTM C 976. For 24 of themore » 40 C 976 tests, a differential pressure was induced across the test wall as per and ASTM E 1424. Airflows ranged from undetectable airflow at 0 {center_dot} Pa {Delta}P to 1.63 L/s {center_dot} m{sup 2} for the base wall assembly alone. Difference in airflow resistance performance between the ASTM E 283 and ASTM E 1424 test methods were noted. Thermal testing results incorporating both ASTM C 976 and ASTM E 1424 for tests 1--28 produced apparent thermal conductances (C-values) in the range of 0.40 W/m{sup 2} {center_dot} K for a nondetectable airflow level to 1.81 W/m{sup 2} {center_dot} K for an airflow of 1.53 L/s {center_dot} m{sup 2} for the base wall assembly alone with a 20-Pa {Delta}P. The calculated C-value for this base wall assembly was 0.40 W/m{sup 2} {center_dot} K. Test results reveal that airflow rates as low as 0.2 L/s {center_dot} m{sup 2} could produce a 46% increase in apparent C-value. Similar thermal performance differences were revealed when thicker shiplap XPS sheathing was used. Tests were also conducted using an Air-Tight Drywall configuration showing the effect of wind washing on thermal performance. By sealing the gypsum drywall on the base wall assembly tested, the apparent C-value, when exposed to a 12.5 Pa wind pressure, was found to be equivalent to a base wall assembly configuration which allows 0.15 L/s {center_dot} m{sup 2} airflow to penetrate completely through.« less

New insights into a hot environment for early life.

PubMed

Dai, Jianghong

2017-06-01

Investigating the physical-chemical setting of early life is a challenging task. In this contribution, the author attempted to introduce a provocative concept from cosmology - cosmic microwave background (CMB), which is the residual thermal radiation from a hot early Universe - to the field. For this purpose, the author revisited a recently deduced biomarker, the 1,6-anhydro bond of sugars in bacteria. In vitro, the 1,6-anhydro bond of sugars reflects and captures residual thermal radiation in thermochemical processes and therefore is somewhat analogous to CMB. In vivo, the formation process of the 1,6-anhydro bond of sugars on the peptidoglycan of prokaryotic cell wall is parallel to in vitro processes, suggesting that the 1,6-anhydro bond is an ideal CMB-like analogue that suggests a hot setting for early life. The CMB-like 1,6-anhydro bond is involved in the life cycle of viruses and the metabolism of eukaryotes, underlying this notion. From a novel perspective, the application of the concept of the CMB to microbial ecology may give new insights into a hot environment, such as hydrothermal vents, supporting early life and providing hypotheses to test in molecular palaeontology. © 2017 Society for Applied Microbiology and John Wiley & Sons Ltd.

Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors

NASA Astrophysics Data System (ADS)

Ito, Daisuke; Fujimura, Norifumi; Yoshimura, Takeshi; Ito, Taichiro

2003-05-01

Ferroelectric properties of YMnO3 epitaxial films were studied. The ferroelectric properties of epitaxially grown (0001) YMnO3 films on (111)Pt/(0001)sapphire (epi-YMO/Pt) with an excellent crystallinity were compared to (0001)-oriented poly crystalline films on (111)Pt/ZrO2/SiO2/Si. The epi-YMO/Pt had saturated polarization-electric-field (P-E) hysteresis loops, with a remanent polarization (Pr) of 1.7 μC/cm2 and a coercive field (Ec) of 80 kV/cm. The fatigue property showed no degradation up to 1010 measured cycles. These results suggested that the YMnO3 epitaxial films were suitable ferroelectric material for the ferroelectric-gate field-effect transistors. Consequently, epitaxially grown (0001)YMnO3 films on epitaxial Y2O3/Si (epi-YMO/Si) were fabricated. The epi-YMO/Si capacitor had almost equivalent crystallinity compared to epi-YMO/Pt. It was recognized that the epi-YMO/Si capacitor exhibited the ferroelectric type C-V hysteresis loop with the width of the memory window of 4.8 V, which was almost identical to the value of twice coercive voltage of the P-E hysteresis loops of the epi-YMO/Pt. A retention time exceeding 104 s was obtained in the epi-YMO/Si capacitor.

High throughput vacuum chemical epitaxy

NASA Astrophysics Data System (ADS)

Fraas, L. M.; Malocsay, E.; Sundaram, V.; Baird, R. W.; Mao, B. Y.; Lee, G. Y.

1990-10-01

We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated at one time. Our vacuum chemical epitaxy reactor closely resembles a molecular beam epitaxy system in that wafers are loaded into a stainless steel vacuum chamber through a load chamber. Also as in MBE, arsenic vapors are supplied as reactant by heating solid arsenic sources thereby avoiding the use of arsine. However, in our VCE reactor, a large number of wafers are coated at one time in a vacuum system by the substitution of Group III alkyl sources for the elemental metal sources traditionally used in MBE. Higher wafer throughput results because in VCE, the metal-alkyl sources for Ga, Al, and dopants can be mixed at room temperature and distributed uniformly though a large area injector to multiple substrates as a homogeneous array of mixed element molecular beams. The VCE reactor that we have built and that we shall describe here uniformly deposits films on 7 inch diameter substrate platters. Each platter contains seven two inch or three 3 inch diameter wafers. The load chamber contains up to nine platters. The vacuum chamber is equipped with two VCE growth zones and two arsenic ovens, one per growth zone. Finally, each oven has a 1 kg arsenic capacity. As of this writing, mirror smooth GaAs films have been grown at up to 4 μm/h growth rate on multiple wafers with good thickness uniformity. The background doping is p-type with a typical hole concentration and mobility of 1 × 10 16/cm 3 and 350 cm 2/V·s. This background doping level is low enough for the fabrication of MESFETs, solar cells, and photocathodes as well as other types of devices. We have fabricated MESFET devices using VCE-grown epi wafers with peak extrinsic transconductance as high as 210 mS/mm for a threshold voltage of - 3 V and a 0.6 μm gate length. We have also recently grown AlGaAs epi layers with up to 80% aluminum using TEAl as the aluminum alkyl source. The Al

Hot Flashes

MedlinePlus

... report menopausal hot flashes than do women of European descent. Hot flashes are less common in women of Japanese and Chinese descent than in white European women. Complications Nighttime hot flashes (night sweats) can ...

In-situ Synchrotron X-ray Studies of the Microstructure and Stability of In 2O 3 Epitaxial Films

DOE PAGES

Highland, M. J.; Hruszkewycz, S. O.; Fong, D. D.; ...

2017-10-16

Here, we report on the synthesis, stability, and local structure of In 2O 3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In 2O 3 deposited onto (001)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski–Krastanov growth mode at a temperature of 850°C, resulting in epitaxial, truncated square pyramids with (111) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In 2O 3 from the magnetron source. Lastly, we also find that the internal lattice structure of onemore » such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In 2O 3 nanostructures and films.« less

Domain structure of epitaxial SrRu O3 thin films

NASA Astrophysics Data System (ADS)

Herranz, G.; Sánchez, F.; Fontcuberta, J.; García-Cuenca, M. V.; Ferrater, C.; Varela, M.; Angelova, T.; Cros, A.; Cantarero, A.

2005-05-01

Growth of multidomains in epitaxial thin-film oxides is known to have a detrimental effect on some functional properties, and, thus, efforts are done to suppress them. It is commonly accepted that optimal properties of the metallic and ferromagnetic SrRuO3 (SRO) epitaxies can only be obtained if vicinal SrTiO3 (001) (STO) substrates are used. It is believed that this results from the suppression of multidomain structure in the SRO film. Here we revise this important issue. Nanometric films of SRO have been grown on STO(001) vicinal substrates with miscut (θV) angles in the ˜0.04°-4° range. Extensive structural analysis by x-ray-reciprocal space maps and μ -Raman spectroscopy indicates that single-domain, orthorhombic, SRO films are already obtained on the almost singular (θV≈0.1°) substrate, and, thus, substrates with large miscut angles are not required to grow twin-free films. In spite of this, transport properties are found to be optimized for films grown on vicinal substrates (θV⩾2°) . We claim that this is the result of the change of the growth mode and the resulting film morphology rather than the change of the domain structure. These findings drive the attention to the relevance of the growth mechanism at the initial stages of film growth, and we discuss its implications in other areas of oxide epitaxies. Moreover, we show that in clamped epitaxies on cubic substrates, in spite of isotropic biaxial substrate-induced strains, films may have an in-plane orthorhombic symmetry which results from the internal degree of freedom defined by rotations of the oxygen octahedrons.

Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

NASA Technical Reports Server (NTRS)

Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

1994-01-01

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

6. HOT AIR PORTION OF DAMPERS. Hot Springs National ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

6. HOT AIR PORTION OF DAMPERS. - Hot Springs National Park, Bathhouse Row, Lamar Bathhouse: Mechanical & Piping Systems, State Highway 7, 1 mile north of U.S. Highway 70, Hot Springs, Garland County, AR

Nanoscale control of stripe-ordered magnetic domain walls by vertical spin transfer torque in La0.67Sr0.33MnO3 film

NASA Astrophysics Data System (ADS)

Wang, Jing; Wu, Shizhe; Ma, Ji; Xie, Lishan; Wang, Chuanshou; Malik, Iftikhar Ahmed; Zhang, Yuelin; Xia, Ke; Nan, Ce-Wen; Zhang, Jinxing

2018-02-01

Stripe-ordered domains with perpendicular magnetic anisotropy have been intensively investigated due to their potential applications in high-density magnetic data-storage devices. However, the conventional control methods (e.g., epitaxial strain, local heating, magnetic field, and magnetoelectric effect) of the stripe-ordered domain walls either cannot meet the demands for miniaturization and low power consumption of spintronic devices or require high strength of the electric field due to the small value of the magnetoelectric effect at room temperature. Here, a domain-wall resistive effect of 0.1% was clarified in La0.67Sr0.33MnO3 thin films between the configurations of current in the plane and perpendicular to the plane of walls. Furthermore, a reversible nanoscale control of the domain-wall re-orientation by vertical spin transfer torque across the probe/film interface was achieved, where a probe voltage of 0.1 V was applied on a manganite-based capacitor. We also demonstrated that the stripe-ordered magnetic domain-wall re-orientation strongly depends on the AC frequency of the scanning probe voltage which was applied on the capacitor.

Development of subminiature multi-sensor hot-wire probes

NASA Technical Reports Server (NTRS)

Westphal, Russell V.; Ligrani, Phillip M.; Lemos, Fred R.

1988-01-01

Limitations on the spatial resolution of multisensor hot wire probes have precluded accurate measurements of Reynolds stresses very near solid surfaces in wind tunnels and in many practical aerodynamic flows. The fabrication, calibration and qualification testing of very small single horizontal and X-array hot-wire probes which are intended to be used near solid boundaries in turbulent flows where length scales are particularly small, is described. Details of the sensor fabrication procedure are reported, along with information needed to successfully operate the probes. As compared with conventional probes, manufacture of the subminiature probes is more complex, requiring special equipment and careful handling. The subminiature probes tested were more fragile and shorter lived than conventional probes; they obeyed the same calibration laws but with slightly larger experimental uncertainty. In spite of these disadvantages, measurements of mean statistical quantities and spectra demonstrate the ability of the subminiature sensors to provide the measurements in the near wall region of turbulent boundary layers that are more accurate than conventional sized probes.

Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111)

NASA Technical Reports Server (NTRS)

Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor); Grunthaner, Paula J. (Inventor)

1991-01-01

Pinhole-free epitaxial CoSi.sub.2 films (14') are fabricated on (111)-oriented silicon substrates (10) with a modified solid phase epitaxy technique which utilizes (1) room temperature stoichiometric (1:2) codeposition of Co and Si followed by (2) room temperature deposition of an amorphous silicon capping layer (16), and (3) in situ annealing at a temperature ranging from about 500.degree. to 750.degree. C.

Site-Competition Epitaxy for N-Type and P-Type Dopant Control in CVD Sic Epilayers

NASA Technical Reports Server (NTRS)

Larkin, D. J.

1995-01-01

The use of site-competition epitaxy, which is based on intentional variation of the Si/C ratio during epitaxy, has now been reproduced in numerous national and international laboratories. However, previous reports have only considered dopant incorporation control for epitaxy on the Si-face 6H-SiC(OOO1) substrates. Presented in this paper is the extension of this technique for control of phosphorous incorporation and also a comparison of controlled doping on C-face 6H-SiC(OOO1) versus Si-face 6H-SiC(OOO1) substrates for aluminum, boron, nitrogen, and phosphorous.

Decoupling of epitaxial graphene via gold intercalation probed by dispersive Raman spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pillai, P. B., E-mail: p.pillai@sheffield.ac.uk, E-mail: m.desouza@sheffield.ac.uk; DeSouza, M., E-mail: p.pillai@sheffield.ac.uk, E-mail: m.desouza@sheffield.ac.uk; Narula, R.

Signatures of a superlattice structure composed of a quasi periodic arrangement of atomic gold clusters below an epitaxied graphene (EG) layer are examined using dispersive Raman spectroscopy. The gold-graphene system exhibits a laser excitation energy dependant red shift of the 2D mode as compared to pristine epitaxial graphene. The phonon dispersions in both the systems are mapped using the experimentally observed Raman signatures and a third-nearest neighbour tight binding electronic band structure model. Our results reveal that the observed excitation dependent Raman red shift in gold EG primarily arise from the modifications of the phonon dispersion in gold-graphene and showsmore » that the extent of decoupling of graphene from the underlying SiC substrate can be monitored from the dispersive nature of the Raman 2D modes. The intercalated gold atoms restore the phonon band structure of epitaxial graphene towards free standing graphene.« less

High-quality GaN epitaxially grown on Si substrate with serpentine channels

NASA Astrophysics Data System (ADS)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

2012-01-01

"Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

Optical and electro-optic anisotropy of epitaxial PZT thin films

NASA Astrophysics Data System (ADS)

Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

2015-07-01

Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

Superconductivity of Rock-Salt Structure LaO Epitaxial Thin Film.

PubMed

Kaminaga, Kenichi; Oka, Daichi; Hasegawa, Tetsuya; Fukumura, Tomoteru

2018-06-06

We report a superconducting transition in a LaO epitaxial thin film with the superconducting transition onset temperature ( T c ) at around 5 K. This T c is higher than those of other lanthanum monochalcogenides and opposite to their chemical trend: T c = 0.84, 1.02, and 1.48 K for LaX (X = S, Se, Te), respectively. The carrier control resulted in a dome-shaped T c as a function of electron carrier density. In addition, the T c was significantly sensitive to epitaxial strain in spite of the highly symmetric crystal structure. This rock-salt superconducting LaO could be a building block to design novel superlattice superconductors.

Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

1990-01-01

Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon.

PubMed

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca I

2017-03-06

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C.

Hot gas path component trailing edge having near wall cooling features

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacy, Benjamin Paul; Kottilingam, Srikanth Chandrudu; Miranda, Carlos Miguel

A hot gas path component includes a substrate having an outer surface and an inner surface. The inner surface defines an interior space. The outer surface defines a pressure side surface and a suction side surface. The pressure and suction side surfaces are joined together at a leading edge and at a trailing edge. A first cooling passage is formed in the suction side surface of the substrate. It is coupled in flow communication to the interior space. A second cooling passage, separate from the first cooling passage, is formed in the pressure side surface. The second cooling passage ismore » coupled in flow communication to the interior space. A cover is disposed over at least a portion of the first and second cooling passages. The interior space channels a cooling fluid to the first and second cooling passages, which channel the cooling fluid therethrough to remove heat from the component.« less

Free-standing epitaxial graphene.

PubMed

Shivaraman, Shriram; Barton, Robert A; Yu, Xun; Alden, Jonathan; Herman, Lihong; Chandrashekhar, Mvs; Park, Jiwoong; McEuen, Paul L; Parpia, Jeevak M; Craighead, Harold G; Spencer, Michael G

2009-09-01

We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 microm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that the resonators are much stiffer than expected for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during the release of the devices, demonstrating that the technique is a robust means of fabricating large-area suspended graphene structures.

Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy

NASA Astrophysics Data System (ADS)

Elborg, Martin; Noda, Takeshi; Mano, Takaaki; Kuroda, Takashi; Yao, Yuanzhao; Sakuma, Yoshiki; Sakoda, Kazuaki

2017-11-01

We successfully grow vertically aligned quantum ring-dot structures by Multiple Droplet Epitaxy technique. The growth is achieved by depositing GaAs quantum rings in a first droplet epitaxy process which are subsequently covered by a thin AlGaAs barrier. In a second droplet epitaxy process, Ga droplets preferentially position in the center indentation of the ring as well as attached to the edge of the ring in [ 1 1 bar 0 ] direction. By designing the ring geometry, full selectivity for the center position of the ring is achieved where we crystallize the droplets into quantum dots. The geometry of the ring and dot as well as barrier layer can be controlled in separate growth steps. This technique offers great potential for creating complex quantum molecules for novel quantum information technologies.

Convection of wall shear stress events in a turbulent boundary layer

NASA Astrophysics Data System (ADS)

Pabon, Rommel; Mills, David; Ukeiley, Lawrence; Sheplak, Mark

2017-11-01

The fluctuating wall shear stress is measured in a zero pressure gradient turbulent boundary layer of Reτ 1700 simultaneously with velocity measurements using either hot-wire anemometry or particle image velocimetry. These experiments elucidate the patterns of large scale structures in a single point measurement of the wall shear stress, as well as their convection velocity at the wall. The wall shear stress sensor is a CS-A05 one-dimensional capacitice floating element from Interdisciplinary Consulting Corp. It has a nominal bandwidth from DC to 5 kHz and a floating element size of 1 mm in the principal sensing direction (streamwise) and 0.2 mm in the cross direction (spanwise), allowing the large scales to be well resolved in the current experimental conditions. In addition, a two sensor array of CS-A05 aligned in the spanwise direction with streamwise separations O (δ) is utilized to capture the convection velocity of specific scales of the shear stress through a bandpass filter and peaks in the correlation. Thus, an average wall normal position for the corresponding convecting event can be inferred at least as high as the equivalent local streamwise velocity. This material is based upon work supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1315138.

Flow characteristics and scaling past highly porous wall-mounted fences

NASA Astrophysics Data System (ADS)

Rodríguez-López, Eduardo; Bruce, Paul J. K.; Buxton, Oliver R. H.

2017-07-01

An extensive characterization of the flow past wall-mounted highly porous fences based on single- and multi-scale geometries has been performed using hot-wire anemometry in a low-speed wind tunnel. Whilst drag properties (estimated from the time-averaged momentum equation) seem to be mostly dependent on the grids' blockage ratio; wakes of different size and orientation bars seem to generate distinct behaviours regarding turbulence properties. Far from the near-grid region, the flow is dominated by the presence of two well-differentiated layers: one close to the wall dominated by the near-wall behaviour and another one corresponding to the grid's wake and shear layer, originating from between this and the freestream. It is proposed that the effective thickness of the wall layer can be inferred from the wall-normal profile of root-mean-square streamwise velocity or, alternatively, from the wall-normal profile of streamwise velocity correlation. Using these definitions of wall-layer thickness enables us to collapse different trends of the turbulence behaviour inside this layer. In particular, the root-mean-square level of the wall shear stress fluctuations, longitudinal integral length scale, and spanwise turbulent structure is shown to display a satisfactory scaling with this thickness rather than with the whole thickness of the grid's wake. Moreover, it is shown that certain grids destroy the spanwise arrangement of large turbulence structures in the logarithmic region, which are then re-formed after a particular streamwise extent. It is finally shown that for fences subject to a boundary layer of thickness comparable to their height, the effective thickness of the wall layer scales with the incoming boundary layer thickness. Analogously, it is hypothesized that the growth rate of the internal layer is also partly dependent on the incoming boundary layer thickness.

Van der Waals Epitaxy of Functional Oxide Heterostructures

NASA Astrophysics Data System (ADS)

Chu, Ying-Hao

In the diligent pursuit of low-power consumption, multifunctional, and environmentally friendly electronics, more sophisticated requirements on functional materials are on demand. Recently, the discovery of 2D layered materials has created a revolution to this field. Pioneered by graphene, these new 2D materials exhibit abundant unusual physical phenomena that is undiscovered in bulk forms. These materials are characterized with their layer form and almost pure 2D electronic behavior. The confinement of charge and heat transport at such ultrathin planes offers possibilities to overcome the bottleneck of present device development in thickness limitation, and thus push the technologies into next generation. Van der Waals epitaxy, an epitaxial growth method to combine 2D and 3D materials, is one of current reliable manufacturing processes to fabricate 2D materials by growing these 2D materials epitaxially on 3D materials. Then, transferring the 2D materials to the substrates for practical applications. In the mean time, van der Waals epitaxy has also been used to create free-standing 3D materials by growing 3D materials on 2D materials and then removing them from 2D materials since the interfacial boding between 2D and 3D materials should be weak van der Waals bonds. In this study, we intend to take the same concept, but to integrate a family of functional materials in order to open new avenue to flexible electronics. Due to the interplay of lattice, charge, orbital, and spin degrees of freedom, correlated electrons in oxides generate a rich spectrum of competing phases and physical properties. Recently, lots of studies have suggested that oxide heterostructures provide a powerful route to create and manipulate the degrees of freedom and offer new possibilities for next generation devices, thus create a new playground for researchers to investigate novel physics and the emergence of fascinating states of condensed matter. In this talk, we use a 2D layered material as

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

PubMed

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Selective Epitaxial Graphene Growth on SiC via AlN Capping

NASA Astrophysics Data System (ADS)

Zaman, Farhana; Rubio-Roy, Miguel; Moseley, Michael; Lowder, Jonathan; Doolittle, William; Berger, Claire; Dong, Rui; Meindl, James; de Heer, Walt; Georgia Institute of Technology Team

2011-03-01

Electronic-quality graphene is epitaxially grown by graphitization of carbon-face silicon carbide (SiC) by the sublimation of silicon atoms from selected regions uncapped by aluminum nitride (AlN). AlN (deposited by molecular beam epitaxy) withstands high graphitization temperatures of 1420o C, hence acting as an effective capping layer preventing the growth of graphene under it. The AlN is patterned and etched to open up windows onto the SiC surface for subsequent graphitization. Such selective epitaxial growth leads to the formation of high-quality graphene in desired patterns without the need for etching and lithographic patterning of graphene itself. No detrimental contact of the graphene with external chemicals occurs throughout the fabrication-process. The impact of process-conditions on the mobility of graphene is investigated. Graphene hall-bars were fabricated and characterized by scanning Raman spectroscopy, ellipsometry, and transport measurements. This controlled growth of graphene in selected regions represents a viable approach to fabrication of high-mobility graphene as the channel material for fast-switching field-effect transistors.

Generation and Transport of Hot Electrons in Cone-Wire Targets

NASA Astrophysics Data System (ADS)

Beg, Farhat

2009-11-01

We present results from a series of experiments where cone-wire targets in various configurations were employed both to assess hot electron coupling efficiency, and to reveal the source temperature of the hot electrons. Initial experiments were performed on the Vulcan petawatt laser at the Rutherford Appleton Laboratory and Titan laser at the Lawrence Livermore National Laboratory. Results with aluminum cones joined to Cu wires of diameters from 10 to 40 μm show that the laser coupling efficiency to electron energy within the wire is proportional to the cross sectional area of the wire. In addition, coupling into the wire was observed to decrease with the laser prepulse and cone-wall thickness. More recently, this study was extended, using the OMEGA EP laser. The resulting changes in coupling energy give indications of the scaling as we approach FI-relevant conditions. Requirements for FI scale fast ignition cone parameters: tip thickness, wall thickness, laser prepulse and laser pulse length, will be discussed. In collaboration with T. Yabuuchi, T. Ma, D. Higginson, H. Sawada, J. King, M.H. Key, K.U. Akli, Al Elsholz, D. Batani, H. Chen, R.R. Freeman, L. Gizzi, J. Green, S. Hatchett, D. Hey, P. Jaanimagi, J. Koch, K. L. Lancaster, D.Larson, A.J. MacKinnon, H. McLean, A. MacPhee, P.A. Norreys, P.K Patel, R. B. Stephens, W. Theobald, R. Town, M. Wei, S. Wilks, Roger Van Maren, B. Westover and L. VanWoerkom.

Prototype solar heated hot water systems and double-walled heat exchangers: A collection of quarterly reports

NASA Technical Reports Server (NTRS)

1978-01-01

The plan schedule and status of multiple objectives to be achieved in the development, manufacture, installation, and maintenance of two solar heated hot water prototype systems and two heat exchangers are reported. A computer program developed to resolve problems and evaluate system performance is described.

Employing proteomic analysis to compare Paracoccidioides lutzii yeast and mycelium cell wall proteins.

PubMed

Araújo, Danielle Silva; de Sousa Lima, Patrícia; Baeza, Lilian Cristiane; Parente, Ana Flávia Alves; Melo Bailão, Alexandre; Borges, Clayton Luiz; de Almeida Soares, Célia Maria

2017-11-01

Paracoccidioidomycosis is an important systemic mycosis caused by thermodimorphic fungi of the Paracoccidioides genus. During the infective process, the cell wall acts at the interface between the fungus and the host. In this way, the cell wall has a key role in growth, environment sensing and interaction, as well as morphogenesis of the fungus. Since the cell wall is absent in mammals, it may present molecules that are described as target sites for new antifungal drugs. Despite its importance, up to now few studies have been conducted employing proteomics in for the identification of cell wall proteins in Paracoccidioides spp. Here, a detailed proteomic approach, including cell wall-fractionation coupled to NanoUPLC-MS E , was used to study and compare the cell wall fractions from Paracoccidioides lutzii mycelia and yeast cells. The analyzed samples consisted of cell wall proteins extracted by hot SDS followed by extraction by mild alkali. In summary, 512 proteins constituting different cell wall fractions were identified, including 7 predicted GPI-dependent cell wall proteins that are potentially involved in cell wall metabolism. Adhesins previously described in Paracoccidioides spp. such as enolase, glyceraldehyde-3-phosphate dehydrogenase were identified. Comparing the proteins in mycelium and yeast cells, we detected some that are common to both fungal phases, such as Ecm33, and some specific proteins, as glucanase Crf1. All of those proteins were described in the metabolism of cell wall. Our study provides an important elucidation of cell wall composition of fractions in Paracoccidioides, opening a way to understand the fungus cell wall architecture. Copyright © 2017 Elsevier B.V. All rights reserved.

Epitaxial lift-off of electrodeposited single-crystal gold foils for flexible electronics

NASA Astrophysics Data System (ADS)

Mahenderkar, Naveen K.; Chen, Qingzhi; Liu, Ying-Chau; Duchild, Alexander R.; Hofheins, Seth; Chason, Eric; Switzer, Jay A.

2017-03-01

We introduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparent foils of single-crystal gold using silicon as a template. Lateral electrochemical undergrowth of a sacrificial SiOx layer was achieved by photoelectrochemically oxidizing silicon under light irradiation. A 28-nanometer-thick gold foil with a sheet resistance of 7 ohms per square showed only a 4% increase in resistance after 4000 bending cycles. A flexible organic light-emitting diode based on tris(bipyridyl)ruthenium(II) that was spin-coated on a foil exploited the transmittance and flexibility of the gold foil. Cuprous oxide as an inorganic semiconductor that was epitaxially electrodeposited onto the gold foils exhibited a diode quality factor n of 1.6 (where n = 1.0 for an ideal diode), compared with a value of 3.1 for a polycrystalline deposit. Zinc oxide nanowires electrodeposited epitaxially on a gold foil also showed flexibility, with the nanowires intact up to 500 bending cycles.

Improvement of the Processes of Liquid-Phase Epitaxial Growth of Nanoheteroepitaxial Structures

NASA Astrophysics Data System (ADS)

Maronchuk, I. I.; Sanikovich, D. D.; Potapkov, P. V.; Vel‧chenko, A. A.

2018-05-01

We have revealed the shortcomings of equipment and technological approaches in growing nanoheteroepitaxial structures with quantum dots by liquid-phase epitaxy. We have developed and fabricated a new vertical barreltype cassette for growing quantum dots and epitaxial layers of various thicknesses in one technological process. A physico-mathematical simulation has been carried out of the processes of liquid-phase epitaxial growth of quantumdimensional structures with the use of the program product SolidWorks (FlowSimulation program). Analysis has revealed the presence of negative factors influencing the growth process of the above structures. The mathematical model has been optimized, and the equipment has been modernized without additional experiments and measurements. The flow dynamics of the process gas in the reactor at various flow rates has been investigated. A method for tuning the thermal equipment has been developed. The calculated and experimental temperature distributions in the process of growing structures with high reproducibility are in good agreement, which confirms the validity of the modernization made.

Process for forming epitaxial perovskite thin film layers using halide precursors

DOEpatents

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Quantum Hall effect in epitaxial graphene with permanent magnets.

PubMed

Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

2016-12-06

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

Optimal doping control of magnetic semiconductors via subsurfactant epitaxy.

PubMed

Zeng, Changgan; Zhang, Zhenyu; van Benthem, Klaus; Chisholm, Matthew F; Weitering, Hanno H

2008-02-15

"Subsurfactant epitaxy" is established as a conceptually new approach for introducing manganese as a magnetic dopant into germanium. A kinetic pathway is devised in which the subsurface interstitial sites on Ge(100) are first selectively populated with Mn, while lateral diffusion and clustering on or underneath the surface are effectively suppressed. Subsequent Ge deposition as a capping layer produces a novel surfactantlike phenomenon as the interstitial Mn atoms float towards newly defined subsurface sites at the growth front. Furthermore, the Mn atoms that failed to float upwards are uniformly distributed within the Ge capping layer. The resulting doping levels of order 0.25 at. % would normally be considered too low for ferromagnetic ordering, but the Curie temperature exceeds room temperature by a comfortable margin. Subsurfactant epitaxy thus enables superior dopant control in magnetic semiconductors.

Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Casallas-Moreno, Y. L.; Perez-Caro, M.; Gallardo-Hernandez, S.

InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 Degree-Sign C, and different In beam fluxes (BEP{sub In}) ranging from 5.9 Multiplication-Sign 10{sup -7} to 9.7 Multiplication-Sign 10{sup -7} Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD)more » and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 Degree-Sign C by MEE.« less

Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel

A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

PubMed Central

Ohno, Takeo; Oyama, Yutaka

2012-01-01

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

Summary of experimental heat-transfer results from the turbine hot section facility

NASA Technical Reports Server (NTRS)

Gladden, Herbert J.; Yeh, Fredrick C.

1993-01-01

Experimental data from the turbine Hot Section Facility are presented and discussed. These data include full-coverage film-cooled airfoil results as well as special instrumentation results obtained at simulated real engine conditions. Local measurements of airfoil wall temperature, airfoil gas-path static-pressure distribution, and local heat-transfer coefficient distributions are presented and discussed. In addition, measured gas and coolant temperatures and pressures are presented. These data are also compared with analyses from Euler and boundary-layer codes.

Ultrathin IBAD MgO films for epitaxial growth on amorphous substrates and sub-50 nm membranes

DOE PAGES

Wang, Siming; Antonakos, C.; Bordel, C.; ...

2016-11-07

Here, a fabrication process has been developed for high energy ion beam assisted deposition (IBAD) biaxial texturing of ultrathin (~1 nm) MgO films, using a high ion-to-atom ratio and post-deposition annealing instead of a homoepitaxial MgO layer. These films serve as the seed layer for epitaxial growth of materials on amorphous substrates such as electron/X-ray transparent membranes or nanocalorimetry devices. Stress measurements and atomic force microscopy of the MgO films reveal decreased stress and surface roughness, while X-ray diffraction of epitaxial overlayers demonstrates the improved crystal quality of films grown epitaxially on IBAD MgO. The process simplifies the synthesis ofmore » IBAD MgO, fundamentally solves the “wrinkle” issue induced by the homoepitaxial layer on sub-50 nm membranes, and enables studies of epitaxial materials in electron/X-ray transmission and nanocalorimetry.« less

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

NASA Astrophysics Data System (ADS)

Yonkee, B. P.; Young, E. C.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

2016-11-01

A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area devices. A high extraction package was developed for comparison with flip chip devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a flip chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This flip chip could increase light extraction over a traditional flip chip LED due to the increased reflectivity of the dielectric based mirror.

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers.

PubMed

Jana, Dipankar; Porwal, S; Sharma, T K; Kumar, Shailendra; Oak, S M

2014-04-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.

Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

DTIC Science & Technology

2010-05-17

arranged by Prof. A. Zaslavsky Keywords: Gallium nitride High electron mobility transistor Molecular beam epitaxy Homoepitaxy Doping a b s t r a c t AlGaN...GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on free- standing semi-insulating GaN substrates, employing...hydride vapor phase epitaxy (HVPE) grown GaN sub- strates has enabled the growth by molecular beam epitaxy (MBE) of AlGaN/GaNHEMTswith significantly

Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface

NASA Astrophysics Data System (ADS)

Huang, Liegen; Li, Yuan; Wang, Wenliang; Li, Xiaochan; zheng, Yulin; Wang, Haiyan; Zhang, Zichen; Li, Guoqiang

2018-03-01

High-quality AlN epitaxial films have been grown on Si substrates by optimizing the hydrofluoric acid (HF) solution for cleaning of Si substrates. Effect of the Si substrate surface on the surface morphology and structural property of AlN epitaxial films is investigated in detail. It is revealed that as the concentration of HF solution increases from 0 to 2.0%, the surface morphology and the crystalline quality are initially improved and then get worse, and show an optimized value at 1.5%. The as-grown ∼200 nm-thick AlN epitaxial films on Si substrates grown with HF solution of 1.5% reveal the root-mean-square (RMS) surface roughness of 0.49 nm and the full-width at half-maximum for AlN(0002) X-ray rocking curve of 0.35°, indicating the smooth surface morphology and the high crystalline quality. The corresponding mechanism is proposed to interpret the effect of Si substrate surface on surface morphology and structural property of AlN epitaxial films, and provides an effective approach for the perspective fabrication of AlN-based devices.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

PubMed Central

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

2017-01-01

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

Local deformation gradients in epitaxial Pb(Zr0.2Ti0.8)O3 layers investigated by transmission electron microscopy

NASA Astrophysics Data System (ADS)

Denneulin, T.; Wollschläger, N.; Everhardt, A. S.; Farokhipoor, S.; Noheda, B.; Snoeck, E.; Hÿtch, M.

2018-05-01

Lead zirconate titanate samples are used for their piezoelectric and ferroelectric properties in various types of micro-devices. Epitaxial layers of tetragonal perovskites have a tendency to relax by forming ferroelastic domains. The accommodation of the a/c/a/c polydomain structure on a flat substrate leads to nanoscale deformation gradients which locally influence the polarization by flexoelectric effect. Here, we investigated the deformation fields in epitaxial layers of Pb(Zr0.2Ti0.8)O3 grown on SrTiO3 substrates using transmission electron microscopy (TEM). We found that the deformation gradients depend on the domain walls inclination ( or to the substrate interface) of the successive domains and we describe three different a/c/a domain configurations: one configuration with parallel a-domains and two configurations with perpendicular a-domains (V-shaped and hat--shaped). In the parallel configuration, the c-domains contain horizontal and vertical gradients of out-of-plane deformation. In the V-shaped and hat--shaped configurations, the c-domains exhibit a bending deformation field with vertical gradients of in-plane deformation. Each of these configurations is expected to have a different influence on the polarization and so the local properties of the film. The deformation gradients were measured using dark-field electron holography, a TEM technique, which offers a good sensitivity (0.1%) and a large field-of-view (hundreds of nanometers). The measurements are compared with finite element simulations.

Effects of Hot Limiter Biasing on Tokamak Runaway Discharges

NASA Astrophysics Data System (ADS)

Salar Elahi, A.; Ghoranneviss, M.; Ghanbari, M. R.

2013-10-01

In this research hot limiter biasing effects on the Runaway discharges were investigated. First wall of the tokamak reactors can affects serious damage due to the high energy runaway electrons during a major disruption and therefore its life time can be reduced. Therefore, it is important to find methods to decrease runaway electron generation and their energy. Tokamak limiter biasing is one of the methods for controlling the radial electric field and can induce a transition to an improved confinement state. In this article generation of runaway electrons and the energy they can obtain will be investigated theoretically. Moreover, in order to apply radial biasing an emissive limiter biasing is utilized. The biased limiter can apply +380 V in the status of cold and hot to the plasma and result in the increase of negative bias current in hot status. In fact, in this experiment we try to decrease the generation of runaway electrons and their energy by using emissive limiter biasing inserted on the IR-T1 tokamak. The mean energy of these electrons was obtained by spectroscopy of hard X-ray. Also, the plasma current center shift was measured from the vertical field coil characteristics in presence of limiter biasing. The calculation is made focusing on the vertical field coil current and voltage changes due to a horizontal displacement of plasma column.

Epitaxy of advanced nanowire quantum devices

NASA Astrophysics Data System (ADS)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

Hot Corrosion of Inconel 625 Overlay Weld Cladding in Smelting Off-Gas Environment

NASA Astrophysics Data System (ADS)

Mohammadi Zahrani, E.; Alfantazi, A. M.

2013-10-01

Degradation mechanisms and hot corrosion behavior of weld overlay alloy 625 were studied. Phase structure, morphology, thermal behavior, and chemical composition of deposited salt mixture on the weld overlay were characterized utilizing XRD, SEM/EDX, DTA, and ICP/OES, respectively. Dilution level of Fe in the weldment, dendritic structure, and degradation mechanisms of the weld were investigated. A molten phase formed on the weld layer at the operating temperature range of the boiler, which led to the hot corrosion attack in the water wall and the ultimate failure. Open circuit potential and weight-loss measurements and potentiodynamic polarization were carried out to study the hot corrosion behavior of the weld in the simulated molten salt medium at 873 K, 973 K, and 1073 K (600 °C, 700 °C, and 800 °C). Internal oxidation and sulfidation plus pitting corrosion were identified as the main hot corrosion mechanisms in the weld and boiler tubes. The presence of a significant amount of Fe made the dendritic structure of the weld susceptible to preferential corrosion. Preferentially corroded (Mo, Nb)-depleted dendrite cores acted as potential sites for crack initiation from the surface layer. The penetration of the molten phase into the cracks accelerated the cracks' propagation mainly through the dendrite cores and further crack branching/widening.

The growth of epitaxial single crystal PbS 1-xSe x films by hot wall evaporation

NASA Astrophysics Data System (ADS)

Neuelmann, R.; Marino, A.; Reichelt, K.

1983-12-01

Heteroepitaxial films of semiconducting PbS 1- xSe x on rock salt and mica substrates have been prepared and studied. The films have good crystalline perfection but have low electron mobilities, probably due to deviations from stoichiometry.

Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

NASA Astrophysics Data System (ADS)

Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

2018-03-01

Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

NASA Astrophysics Data System (ADS)

Yang, Y.-B.; Seewald, L.; Mohanty, Dibyajyoti; Wang, Y.; Zhang, L. H.; Kisslinger, K.; Xie, Weiyu; Shi, J.; Bhat, I.; Zhang, Shengbai; Lu, T.-M.; Wang, G.-C.

2017-08-01

Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (∼21-55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [1 bar2 1 bar]CdTe//[ 1 bar100]CdS//[010]mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. The use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.

Hot Corrosion at Air-Ports in Kraft Recovery Boilers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holcomb, Gordon R.; Covino, Bernard S., Jr.; Russell, James H.

2003-01-01

Hot corrosion can occur on the cold-side of airports in Kraft recovery boilers. The primary corrosion mechanism involves the migration of sodium hydroxide and potassium hydroxide vapors through leaks in the furnace wall at the airports and their subsequent condensation. It has been reported that stainless steel is attacked much faster than carbon steel in composite tubes, and that carbon steel tubing, when used with a low-chromium refractory, does not exhibit this type of corrosion. For hot corrosion fluxing of metal oxides, either acidic or basic fluxing takes place, with a solubility minimum at the basicity of transition between themore » two reactions. For stainless steel, if the basicity of the fused salt is between the iron and chromium oxide solubility minima, then a synergistic effect can occur that leads to rapid corrosion. The products of one reaction are the reactants of the other, which eliminates the need for rate-controlling diffusion. This effect can explain why stainless steel is attacked more readily than carbon steel.« less

Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures

NASA Astrophysics Data System (ADS)

Crook, Adam M.; Nair, Hari P.; Ferrer, Domingo A.; Bank, Seth R.

2011-08-01

We present a growth method that overcomes the mismatch in rotational symmetry of ErAs and conventional III-V semiconductors, allowing for epitaxially integrated semimetal/semiconductor heterostructures. Transmission electron microscopy and reflection high-energy electron diffraction reveal defect-free overgrowth of ErAs layers, consisting of >2× the total amount of ErAs that can be embedded with conventional layer-by-layer growth methods. We utilize epitaxial ErAs nanoparticles, overgrown with GaAs, as a seed to grow full films of ErAs. Growth proceeds by diffusion of erbium atoms through the GaAs spacer, which remains registered to the underlying substrate, preventing planar defect formation during subsequent GaAs growth. This growth method is promising for metal/semiconductor heterostructures that serve as embedded Ohmic contacts to epitaxial layers and epitaxially integrated active plasmonic devices.

Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent

NASA Astrophysics Data System (ADS)

Nakamura, Hiroshi; Aoki, Masaharu

1981-01-01

Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slide-boat technique was used, and a suitable starting temperature for growth was found to be 850°C for ZnS and 700-800°C for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (˜1 μm) and smooth, had low, uniform Te concentrations (˜0.1 at.%) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10-30 μm) and had fairly high Te concentrations (a few at.%). Various mixed compound ZnS1-xSex were also grown on ZnS substrates.

Epitaxial Ce and the magnetism of single-crystal Ce/Nd superlattices

NASA Astrophysics Data System (ADS)

Clegg, P. S.; Goff, J. P.; McIntyre, G. J.; Ward, R. C.; Wells, M. R.

2003-05-01

The chemical structure of epitaxial γ cerium and the chemical and magnetic structures of cerium/neodymium superlattices have been studied using x-ray and neutron diffraction techniques. The samples were grown using molecular-beam epitaxy, optimized to yield the desired Ce allotropes. The x-ray measurements show that, in the superlattices, both constituents adopt the dhcp structure and that the stacking sequence remains intact down to T˜2 K; these are the first measurements of magnetic ordering in single-crystal dhcp Ce. The magnetic structure of the superlattices with thicker Nd layers exhibit incommensurate order and ferromagnetism on separate sublattices in a similar manner to Nd under applied pressure. The sample with thickest Ce layers has a magnetic structure similar to bulk β Ce, which has commensurate transverse modulation with a propagation wave vector [1/2 0 0] and moments along the hexagonal a direction. These two types of magnetic order appear to be mutually exclusive. γ Ce is the high-temperature fcc phase of Ce, our single-phase epitaxial sample is observed to go through a new, but partial, structural transition not previously seen in the bulk material.

Comparative study of textured and epitaxial ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Wrobel, J. M.; Jeong, H. M.; Miceli, P. F.; White, H. W.

2000-06-01

ZnO films were synthesized by pulsed laser deposition (PLD) on GaAs and α-Al 2O 3 substrates. The properties of ZnO films on GaAs and α-Al 2O 3 have been investigated to determine the differences between epitaxial and textured ZnO films. ZnO films on GaAs show very strong emission features associated with exciton transitions as do ZnO films on α-Al 2O 3, while the crystalline structural qualities for ZnO films on α-Al 2O 3 are much better than those for ZnO films on GaAs. The properties of ZnO films are studied by comparing highly oriented, textured ZnO films on GaAs with epitaxial ZnO films on α-Al 2O 3 synthesized along the c-axis.

Epitaxial titanium diboride films grown by pulsed-laser deposition

NASA Astrophysics Data System (ADS)

Zhai, H. Y.; Christen, H. M.; Cantoni, C.; Goyal, A.; Lowndes, D. H.

2002-03-01

Epitaxial, smooth, and low-resistivity titanium diboride (TiB2) films have been grown on SiC substrates using pulsed-laser deposition. Combined studies from ex situ x-ray diffraction and in situ reflection high-energy electron diffraction indicate the crystallographic alignment between TiB2 and SiC both parallel and normal to the substrate. Atomic force microscopy and scanning electron microscopy studies show that these epitaxial films have a smooth surface, and the resistivity of these films is comparable to that of single-crystal TiB2. Growth of these films is motivated by this material's structural and chemical similarity and lattice match to the newly discovered superconductor MgB2, both to gain further insight into the physical mechanisms of diborides in general and, more specifically, as a component of MgB2-based thin-film heterostructures.

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE PAGES

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R; ...

2017-08-12

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire

NASA Astrophysics Data System (ADS)

Chen, Changqing; Zhang, Jianping; Yang, Jinwei; Adivarahan, Vinod; Rai, Shiva; Wu, Shuai; Wang, Hongmei; Sun, Wenhong; Su, Ming; Gong, Zheng; Kuokstis, Edmundas; Gaevski, Mikhail; Khan, Muhammad Asif

2003-07-01

We report a new epitaxy procedure for growing extremely low defect density a-plane GaN films over r-plane sapphire. By combining selective area growth through a SiO2 mask opening to produce high height to width aspect ratio a-plane GaN pillars and lateral epitaxy from their c-plane facets, we obtained fully coalesced a-plane GaN films. The excellent structural, optical and electrical characteristics of these selective area lateral epitaxy (SALE) deposited films make them ideal for high efficiency III-N electronic and optoelectronic devices.

Chemical beam epitaxy for high efficiency photovoltaic devices

NASA Technical Reports Server (NTRS)

Bensaoula, A.; Freundlich, A.; Vilela, M. F.; Medelci, N.; Renaud, P.

1994-01-01

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Instrumentation for Epitaxial Growth of Complex Oxides

DTIC Science & Technology

2015-12-17

synthesis of complex oxide heterostructures. A RF oxygen plasma source was acquired to increase the oxidizing ability of the growth environment, an...improvement that will prove critical in stabilizing materials with high oxidization states. The plasma source and accompanying electronics were purchased...2014 14-Aug-2015 Approved for Public Release; Distribution Unlimited Final Report: Instrumentation for Epitaxial Growth of Complex Oxides The views

Structural Properties of Alternate Monatomic Layered [Fe/Co]n Epitaxial Films on MgO Substrate

NASA Astrophysics Data System (ADS)

Chu, In Chang; Saki, Yoshinobu; Kawasaki, Shohei; Doi, Masaaki; Sahashi, Masashi

2008-06-01

Body-centered-cubic (bcc) Fe50Co50 material is reported to show a high bulk spin scattering coefficient on current perpendicular to plane-giant magneto-resistance (CPP-GMR) system. But the origin of that phenomenon does not make sure yet. We prepared artificially alternate monatomic layered (AML) [Fe/Co] 41 MLs epitaxial films (Ts: 75, 250 °C) by monatomic deposition method and investigated the topology of AML [Fe/Co]n epitaxial films on MgO substrate with different orientation (001), (011) by the scanning tunnel microscopy (STM) and reflection high energy electron diffraction (RHEED), which we could confirm Frank-van der Merwe (FM) growth mode for AML [Fe/Co]n on MgO(001) and Volmer-Weber (VW) growth mode for that on Mg(011). The roughness of surface, Ra (0.20 nm) of AML [Fe/Co] 41 MLs epitaxial film grown at 75 °C on MgO(001) is smaller than that (0.46 nm) of AML [Fe/Co] grown at 250 °C on MgO(001), which has the large terraces of over 50 nm (Ra: 0.17 nm), even though there are some valleys between large terraces. Moreover we confirmed the structural properties of trilayered epitaxial films with AML [Fe/Co]n (Ra: 0.18 nm) and Fe50Co50 alloy epitaxial film on Au electrode by RHEED before confirming the characteristics of CPP-GMR devices.

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turski, H., E-mail: henryk@unipress.waw.pl; Muziol, G.; Wolny, P.

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ{sub N}) during quantum wells (QWs) growth. We found that high Φ{sub N} improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold currentmore » density are discussed.« less

The Interfacial Thermal Conductance of Epitaxial Metal-Semiconductor Interfaces

NASA Astrophysics Data System (ADS)

Ye, Ning

Understanding heat transport at nanometer and sub-nanometer lengthscales is critical to solving a wide range of technological challenges related to thermal management and energy conversion. In particular, finite Interfacial Thermal Conductance (ITC) often dominates transport whenever multiple interfaces are closely spaced together or when heat originates from sources that are highly confined by interfaces. Examples of the former include superlattices, thin films, quantum cascade lasers, and high density nanocomposites. Examples of the latter include FinFET transistors, phase-change memory, and the plasmonic transducer of a heat-assisted magnetic recording head. An understanding of the physics of such interfaces is still lacking, in part because experimental investigations to-date have not bothered to carefully control the structure of interfaces studied, and also because the most advanced theories have not been compared to the most robust experimental data. This thesis aims to resolve this by investigating ITC between a range of clean and structurally well-characterized metal-semiconductor interfaces using the Time-Domain Thermoreflectance (TDTR) experimental technique, and by providing theoretical/computational comparisons to the experimental data where possible. By studying the interfaces between a variety of materials systems, each with unique aspects to their tunability, I have been able to answer a number of outstanding questions regarding the importance of interfacial quality (epitaxial/non-epitaxial interfaces), semiconductor doping, matching of acoustic and optical phonon band structure, and the role of phonon transport mechanisms apart from direct elastic transmission on ITC. In particular, we are able to comment on the suitability of the diffuse mismatch model (DMM) to describe the transport across epitaxial interfaces. To accomplish this goal, I studied interfacial thermal transport across CoSi2, TiSi2, NiSi and PtSi - Si(100) and Si(111), (silicides

Imposed magnetic field and hot electron propagation in inertial fusion hohlraums

DOE PAGES

Strozzi, David J.; Perkins, L. J.; Marinak, M. M.; ...

2015-12-02

The effects of an imposed, axial magnetic fieldmore » $$B_{z0}$$ on hydrodynamics and energetic electrons in inertial confinement fusion indirect-drive hohlraums are studied. We present simulations from the radiation-hydrodynamics code HYDRA of a low-adiabat ignition design for the National Ignition Facility, with and without $$B_{z0}=70~\\text{T}$$. The field’s main hydrodynamic effect is to significantly reduce electron thermal conduction perpendicular to the field. This results in hotter and less dense plasma on the equator between the capsule and hohlraum wall. The inner laser beams experience less inverse bremsstrahlung absorption before reaching the wall. The X-ray drive is thus stronger from the equator with the imposed field. We study superthermal, or ‘hot’, electron dynamics with the particle-in-cell code ZUMA, using plasma conditions from HYDRA. During the early-time laser picket, hot electrons based on two-plasmon decay in the laser entrance hole (Regan et al., Phys. Plasmas, vol. 17(2), 2010, 020703) are guided to the capsule by a 70 T field. Twelve times more energy deposits in the deuterium–tritium fuel. For plasma conditions early in peak laser power, we present mono-energetic test-case studies with ZUMA as well as sources based on inner-beam stimulated Raman scattering. Furthermore, the effect of the field on deuterium–tritium deposition depends strongly on the source location, namely whether hot electrons are generated on field lines that connect to the capsule.« less

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

DOEpatents

Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

2015-01-06

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

DOEpatents

Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

2013-02-19

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Large scale structures in a turbulent boundary layer and their imprint on wall shear stress

NASA Astrophysics Data System (ADS)

Pabon, Rommel; Barnard, Casey; Ukeiley, Lawrence; Sheplak, Mark

2015-11-01

Experiments were performed on a turbulent boundary layer developing on a flat plate model under zero pressure gradient flow. A MEMS differential capacitive shear stress sensor with a 1 mm × 1 mm floating element was used to capture the fluctuating wall shear stress simultaneously with streamwise velocity measurements from a hot-wire anemometer traversed in the wall normal direction. Near the wall, the peak in the cross correlation corresponds to an organized motion inclined 45° from the wall. In the outer region, the peak diminishes in value, but is still significant at a distance greater than half the boundary layer thickness, and corresponds to a structure inclined 14° from the wall. High coherence between the two signals was found for the low-frequency content, reinforcing the belief that large scale structures have a vital impact on wall shear stress. Thus, estimation of the wall shear stress from the low-frequency velocity signal will be performed, and is expected to be statistically significant in the outer boundary layer. Additionally, conditionally averaged mean velocity profiles will be presented to assess the effects of high and low shear stress. This material is based upon work supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1315138.

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were

Epitaxial hexagonal materials on IBAD-textured substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substratesmore » to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.« less

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

PubMed

Natrella, Michele; Rouvalis, Efthymios; Liu, Chin-Pang; Liu, Huiyun; Renaud, Cyril C; Seeds, Alwyn J

2012-08-13

We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.

Inverse heat conduction estimation of inner wall temperature fluctuations under turbulent penetration

NASA Astrophysics Data System (ADS)

Guo, Zhouchao; Lu, Tao; Liu, Bo

2017-04-01

Turbulent penetration can occur when hot and cold fluids mix in a horizontal T-junction pipe at nuclear plants. Caused by the unstable turbulent penetration, temperature fluctuations with large amplitude and high frequency can lead to time-varying wall thermal stress and even thermal fatigue on the inner wall. Numerous cases, however, exist where inner wall temperatures cannot be measured and only outer wall temperature measurements are feasible. Therefore, it is one of the popular research areas in nuclear science and engineering to estimate temperature fluctuations on the inner wall from measurements of outer wall temperatures without damaging the structure of the pipe. In this study, both the one-dimensional (1D) and the two-dimensional (2D) inverse heat conduction problem (IHCP) were solved to estimate the temperature fluctuations on the inner wall. First, numerical models of both the 1D and the 2D direct heat conduction problem (DHCP) were structured in MATLAB, based on the finite difference method with an implicit scheme. Second, both the 1D IHCP and the 2D IHCP were solved by the steepest descent method (SDM), and the DHCP results of temperatures on the outer wall were used to estimate the temperature fluctuations on the inner wall. Third, we compared the temperature fluctuations on the inner wall estimated by the 1D IHCP with those estimated by the 2D IHCP in four cases: (1) when the maximum disturbance of temperature of fluid inside the pipe was 3°C, (2) when the maximum disturbance of temperature of fluid inside the pipe was 30°C, (3) when the maximum disturbance of temperature of fluid inside the pipe was 160°C, and (4) when the fluid temperatures inside the pipe were random from 50°C to 210°C.

Molecular Beam Epitaxial Growth of Iron Nitrides on Zinc-Blende Gallium Nitride(001)

NASA Astrophysics Data System (ADS)

Pak, Jeongihm; Lin, Wenzhi; Chinchore, Abhijit; Wang, Kangkang; Smith, Arthur R.

2008-03-01

Iron nitrides are attractive materials for their high magnetic moments, corrosion, and oxidation resistance. We present the successful epitaxial growth of iron nitride on zinc-blende gallium nitride (c-GaN) in order to develop a novel magnetic transition metal nitride/semiconductor system. First, GaN is grown on magnesium oxide (MgO) substrates having (001) orientation using rf N2-plasma molecular beam epitaxy. Then we grow FeN at substrate temperature of ˜ 210 ^oC up to a thickness of ˜ 10.5 nm. In-situ reflection high-energy electron diffraction (RHEED) is used to monitor the surface during growth. Initial results suggest that the epitaxial relationship is FeN[001] || GaN[001] and FeN[100] || GaN[100]. Work in progress is to investigate the surface using in-situ scanning tunneling microscopy (STM) to reveal the surface structure at atomic scale, as well as to explore more Fe-rich magnetic phases.

Epitaxial growth and chemical vapor transport of ZnTe by closed-tube method

NASA Astrophysics Data System (ADS)

Ogawa, H.; Nishio, M.; Arizumi, T.

1981-04-01

The epitaxial growth of ZnTe in a ZnTe- I2 system by a closed tube method is investigated by varying the charged iodine concentration ( MI2) or the temperature difference ( ΔT) between the high and low temperature zones. The transport rate is a function of MI2 and ΔT and has a minimum value increasing monotonically at higher and lower iodine concentration, and it increases with increasing ΔT. This experimental result can be explained well by thermodynamical calculations. The growth rate of ZnTe has the same tendency as the transport rate. The surface morphology of epitaxial layer on (110)ZnTe is not sinificantly affected by MI2 but becomes smoother with increasing temperature. The surface morphology and the growth rate of ZnTe layers also depend upon the orientation of substrate. The epitaxial layer can be obtained at temperature as low as 623°C.

Hot-field tectonics

NASA Astrophysics Data System (ADS)

Zonenshain, L. P.; Kuzmin, M. I.; Bocharova, N. Yu.

1991-12-01

Intraplate, hot spot related volcanic occurrences do not have a random distribution on the Earth's surface. They are concentrated in two large regions (up to 10,000 km in diameter), the Pacific and the African, and two smaller areas (2000-3000 km in diameter), the Central Asian and the Tasmanian. These regions are considered as manifestations of hot fields in the mantle, whereas the regions lying in between are expressions of cold fields in the mantle. Large-scale anomalies coincide with the hot fields: topographic swells, geoid highs, uplifts of the "asthenospheric table", inferred heated regions in the lowermost mantle according to seismic tomographic images, geochemical anomalies showing the origin of volcanics from undepleted mantle sources. Hot fields are relatively stable features, having remained in the same position on the Earth's surface during the last 120 Ma, although they have other configurations and other positions in the Late Paleozoic and Early Mesozoic. Available data show that two main hot fields (Pacific and African) are possibly moving one with respect to the other, converging along the Eastern Pacific subduction system and diverging along that of the Western Pacific. If so, well-known differences between these subduction systems can also be connected with related displacement of the hot fields. Hot fields are assumed to correspond to upwelling branches of mantle and rather deep mantle convection, and cold fields to downwelling branches. Thus, hot fields can be regarded as expressions of deeper tectonics, comparative to the plate tectonics, which is operating in the upper layers of the Earth. We call it hot-field tectonics. Plate tectonics is responsible for the opening and closure of oceans and for the formation of orogenic belts, whereas hot-field tectonics accounts for a larger cyclicity of the Earth's evolution and for amalgamation and break up of Pangea-type supercontinents. Hot-field tectonics seems to be the only process to have existed

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

DOE PAGES

Yang, Y. -B.; Seewald, L.; Mohanty, Dibyajyoti; ...

2017-03-31

We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [more » $$\\overline{1}2\\overline{1}$$] CdTe//[$$\\overline{1}100$$] CdS//[010] mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.« less

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Y. -B.; Seewald, L.; Mohanty, Dibyajyoti

We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [more » $$\\overline{1}2\\overline{1}$$] CdTe//[$$\\overline{1}100$$] CdS//[010] mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.« less

Substrate-Independent Epitaxial Growth of the Metal-Organic Framework MOF-508a.

PubMed

Wilson, M; Barrientos-Palomo, S N; Stevens, P C; Mitchell, N L; Oswald, G; Nagaraja, C M; Badyal, J P S

2018-01-31

Plasmachemical deposition is a substrate-independent method for the conformal surface functionalization of solid substrates. Structurally well-defined pulsed plasma deposited poly(1-allylimidazole) layers provide surface imidazole linker groups for the directed liquid-phase epitaxial (layer-by-layer) growth of metal-organic frameworks (MOFs) at room temperature. For the case of microporous [Zn (benzene-1,4-dicarboxylate)-(4,4'-bipyridine) 0.5 ] (MOF-508), the MOF-508a polymorph containing two interpenetrating crystal lattice frameworks undergoes orientated Volmer-Weber growth and displays CO 2 gas capture behavior at atmospheric concentrations in proportion to the number of epitaxially grown MOF-508 layers.

Are ``Hot Spots'' Hot? - An Overview

NASA Astrophysics Data System (ADS)

Foulger, G. R.

2010-12-01

The term “hot spot” is taken variously to imply a) the presence of excessive volcanism, or b) that the melt formed in an unusually hot source. Case b) is intrinsic to the plume hypothesis. Temperature anomalies of 200-300 degrees Celsius are expected, though there is widespread downward-revision of this where observations do not support it. It is not self-evident that “hot spots” are hot in the sense of case b), despite the fact that this is widely assumed. Furthermore, a hot source is not strongly supported by observations, and is at odds with many data. The temperature of the mantle has been studied using many different methods. Global oceanic heat flow values were recently assessed, but reveal no evidence for elevated temperatures around proposed plume localities. Mapping surface heat flow is only sensitive to anomalies at the level of 100 degrees Celsius, however. Seismological methods include correlating velocity with crustal thickness at LIPs, measuring transition zone thickness, and mapping velocity, e.g., using tomography. The first of these does not find evidence for elevated temperatures. The latter two are both sensitive to the presence of partial melt and variations in rock composition, in addition to temperature, which is the weakest potential effect. They thus cannot be used as thermometers. In particular, it cannot be assumed that red = hot and blue = cold in tomographic cross sections. Petrological and geochemical approaches include the “global systematics”. This has now been shown to not work for estimating temperature and its application should be discontinued. Mineralogical phase relationships are applied by comparing data from laboratory melting experiments to observations. Olivine control-line analysis has been extensively used in attempts to measure the differences in melt-formation temperature between mid-ocean ridges and melting anomalies. Difficulties arise in choosing the correct olivine geothermometer and because picrite glass

Epitaxial bain paths and metastable phases of tetragonal iron and manganese

NASA Astrophysics Data System (ADS)

Ma, Hong

2002-04-01

Epitaxial Bain paths and metastable states of tetragonal Fe and Mn have been studied by first-principles total-energy calculations using the full-potential linearized-augmented-plane-wave method. The main accomplishments are as follows. (1) We have performed the first ever EBP calculation of tetragonal antiferromagnetic (AF) Mn showing that when grown epitaxially on Pd(001), the AF Mn film is strained gamma-Mn, but grown on V(001) the film is strained delta-Mn, which could not be determined using the available crystallographic and elastic data because they were obtained from unstrained states. (2) We have calculated the EBP's of Fe at zero pressure in four magnetic phases, i.e., ferromagnetic (FM), nonmagnetic (NM), type-I antiferromagnetic (AF1), and type-II antiferromagnetic (AF2), which show that the AF2 is the phase of the bulk of epitaxial Fe films on Cu(001) and it is unstable for [110] and [010] shears in the (001) plane, but it can be stabilized by epitaxy on Cu(001). (3)We have unified and simplified the theory of elasticity under hydrostatic pressure p at zero temperature using the Gibbs free energy G, rather than the energy E. The minima of G, but not E, with respect to strains at the equilibrium structure give the zero temperature elastic constants; the stability of a phase at p is then determined by the same Born stability conditions used at p = 0 when applied to the elastic constants from G. The EBP's of FM Fe under hydrostatic pressure show that the bcc phase exists up to 1500 kbar. A bct phase is shown to come into existence at 1300 kbar and becomes stable at 1825 kbar and above. (4) Based on this dissertation research five papers have been published in refereed journals.

A&M. TAN607 sections. Section C cuts hot shop on its ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

A&M. TAN-607 sections. Section C cuts hot shop on its 160-foot east/west line. Shows tapered shield wall on east and west facades of building. Relationship between hot shop and special equipment service room, cable tracks for overhead bridge crane, location of well. Concrete roof beams. Section D shows similar east/west of cold assembly room 115 and its bridge crane rail. Shows heavy shielding around special services cubicle and height of viewing windows on east and west sides. Rear of building is shown in relationship to the ridge east of the building. Referent drawing is ID-33-E-158 above. Ralph M. Parsons 902-3-ANP-607-A 106. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-00-693-106758 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

Growth and characterization of epitaxial silver indium diselenide

NASA Astrophysics Data System (ADS)

Pena Martin, Pamela

Photovoltaics (solar cells) are a key player in the renewable energy frontier, and will become increasingly important as their cost per watt continues to drop, especially if fossil fuel costs increase. One particularly promising photovoltaic technology is based on chalcopyrite-structure semiconductors. Within the chalcopyrite compounds the highest efficiency thin film solar cell absorber material to date is Cu(In,Ga)Se2 (CIGS). While current efficiency records are over 21% for single-junction cells, there is still room for improvement. Replacing some of the Cu with Ag has been shown to be beneficial in CIGS devices. However, the Ag- containing chalcopyrites are still relatively unknown in terms of their growth mechanism, energetics, and surface atomic and electronic properties. These are best inferred through study of epitaxial films, yet they have little mention in literature and have not been the subject of a detailed study. This work describes the growth of epitaxial AgInSe2 (AIS) on GaAs substrates, studying the morphology, structure, and surface properties to understand how growth takes place. It also seeks to experimentally determine the surface electronic and atomic structure at the atomic scale to gain insight into the part of the material that forms the heterojunction that collects photon energy in the device. Finally, this work seeks to compare and contrast these findings with what is known about CIGS to determine where similarities and, more importantly, the differences may lie. This study has found that single phase tetragonal AIS can be epitaxially grown on GaAs, as illustrated by x-ray diffraction (XRD), transmission electron microscope (TEM), and surface morphology data. Like CIGS, the close packed polar (112) planes have the lowest energy. The morphology points to a difference in step dynamics, leading to less faceted, straight edged island shapes compared to CIGS. Epitaxial temperature as a function of growth direction shows a different trend in

Superconducting Ga/GaSe layers grown by van der Waals epitaxy

NASA Astrophysics Data System (ADS)

Desrat, W.; Moret, M.; Briot, O.; Ngo, T.-H.; Piot, B. A.; Jabakhanji, B.; Gil, B.

2018-04-01

We report on the growth of GaSe films by molecular beam epitaxy on both (111)B GaAs and sapphire substrates. X-ray diffraction reveals the perfect crystallinity of GaSe with the c-axis normal to the substrate surface. The samples grown under Ga rich conditions possess an additional gallium film on top of the monochalcogenide layer. This metallic film shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K and 6.0 K. They correspond likely to the β and α-phases of gallium in the form of bulk and droplets respectively. Our results demonstrate that van der Waals epitaxy can lead to future high quality hybrid superconductor/monochalcogenide heterostructures.

Molecular beam epitaxy growth of SmB6+/-δ thin films

NASA Astrophysics Data System (ADS)

Hoffman, Jason; Saleem, Muhammad; Day, James; Bonn, Doug; Hoffman, Jennifer

SmB6 has emerged as a leading candidate in the search for exotic topological states generated by strong interactions. The synthesis of epitaxial SmB6 thin films presents new avenues to control surface termination, thickness, and strain in this system. In this work, we use molecular beam epitaxy (MBE) to deposit SmB6+/-δ films on insulating (001)-oriented MgO substrates. We use ex-situ x-ray diffraction and magnetotransport measurements to assess the properties of the samples and compare them to previously reported values for single crystals. We also discuss the prospects of using rare-earth substitution to control the correlation strength and alter the topology of the bulk and surface electronic states.

Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

PubMed

Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

2018-04-25

In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

Investigation of Wall Shear Stress Behavior for Rough Surfaces with Blowing

NASA Astrophysics Data System (ADS)

Helvey, Jacob; Borchetta, Colby; Miller, Mark; Martin, Alexandre; Bailey, Sean

2014-11-01

We present an experimental study conducted in a turbulent channel flow wind tunnel to determine the modifications made to the turbulent flow over rough surfaces with flow injection through the surfaces. Hot-wire profile results from a quasi-two-dimensional, sinusoidally-rough surface indicate that the effects of roughness are enhanced by momentum injection through the surface. In particular, the wall shear stress was found to show behavior consistent with increased roughness height when surface blowing was increased. This observed behavior contradicts previously reported results for regular three-dimensional roughness which show a decrease in wall shear stress with additional blowing. It is unclear whether this discrepancy is due to differences in the roughness geometry under consideration or the use of the Clauser fit to estimate wall shear stress. Additional PIV experiments are being conducted for a three-dimensional fibrous surface to obtain Reynolds shear stress profiles. These results provide an additional method for estimation of wall-shear stress and thus allow verification of the use of the Clauser chart approach for flows with momentum injection through the surface. This research is supported by NASA Kentucky EPSCoR Award NNX10AV39A, and NASA RA Award NNX13AN04A.

Epitaxial crystals of Bi₂Pt₂O₇ pyrochlore through the transformation of δ–Bi₂O₃ fluorite

DOE PAGES

Gutiérrez–Llorente, Araceli; Joress, Howie; Woll, Arthur; ...

2015-03-01

Bi₂Pt₂O₇ pyrochlore is thought to be one of the most promising oxide catalysts for application in fuel cell technology. Unfortunately, direct film growth of Bi₂Pt₂O₇ has not yet been achieved, owing to the difficulty of oxidizing platinum metal in the precursor material to Pt⁴⁺. In this work, in order to induce oxidation of the platinum, we annealed pulsed laser deposited films consisting of epitaxial δ–Bi₂O₃ and co-deposited, comparatively disordered platinum. We present synchrotron x-ray diffraction results that show the nonuniform annealed films contain the first epitaxial crystals of Bi₂Pt₂O₇. We also visualized the pyrochlore structure by scanning transmission electron microscopy,more » and observed ordered cation vacancies in the epitaxial crystals formed in a bismuth-rich film but not in those formed in a platinum-rich film. The similarity between the δ–Bi₂O₃ and Bi₂Pt₂O₇ structures appears to facilitate the pyrochlore formation. These results provide the only route to date for the formation of epitaxial Bi₂Pt₂O₇.« less

Emitter Choice for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2016-11-21

High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current andmore » lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.« less

Growth and characterization of III-V epitaxial films

NASA Astrophysics Data System (ADS)

Tripathi, A.; Adamski, J.

1991-11-01

Investigations were conducted on the growth of epitaxial layers using an Organo Metallic Chemical Vapor Deposition technique of selected III-V materials which are potentially useful for photonics and microwave devices. RL/ERX's MOCVD machine was leak checked for safety. The whole gas handling plumbing system has been leak checked and the problems were reported to the manufacturer, CVD Equipment Corporation of Dear Park, NY. CVD Equipment Corporation is making an effort to correct these problems and also supply the part according to our redesign specifications. One of the main emphasis during this contract period was understanding the operating procedure and writing an operating manual for this MOCVD machine. To study the dynamic fluid flow in the vertical reactor of this MOCVD machine, an experimental apparatus was designed, tested, and put together. This study gave very important information on the turbulent gas flow patterns in this vertical reactor. The turbulent flow affects the epitaxial growth adversely. This study will also help in redesigning a vertical reactor so that the turbulent gas flow can be eliminated.

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

NASA Astrophysics Data System (ADS)

Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W.; Lippert, Thomas; Traversa, Enrico; Kilner, John A.

2015-02-01

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

PubMed

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

PubMed Central

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-01

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

Deformation and Failure of a Multi-Wall Carbon Nanotube Yarn Composite

NASA Technical Reports Server (NTRS)

Gates, Thomas S.; Jefferson, Gail D.; Frankland, Sarah-Jane V.

2008-01-01

Forests of multi-walled carbon nanotubes can be twisted and manipulated into continuous fibers or yarns that exhibit many of the characteristics of traditional textiles. Macro-scale analysis and test may provide strength and stiffness predictions for a composite composed of a polymer matrix and low-volume fraction yarns. However, due to the nano-scale of the carbon nanotubes, it is desirable to use atomistic calculations to consider tube-tube interactions and the influence of simulated twist on the effective friction coefficient. This paper reports laboratory test data on the mechanical response of a multi-walled, carbon nanotube yarn/polymer composite from both dynamic and quasi-static tensile tests. Macroscale and nano-scale analysis methods are explored and used to define some of the key structure-property relationships. The measured influence of hot-wet aging on the tensile properties is also reported.

Epitaxial Fe/Y2O3 interfaces as a model system for oxide-dispersion-strengthened ferritic alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Bowden, Mark E.; Wang, Chong M.

2015-02-01

The fundamental mechanisms underlying the superior radiation tolerance properties of oxide-dispersion-strengthened ferritic steels and nanostructured ferritic alloys are poorly understood. Thin film heterostructures of Fe/Y2O3 can serve as a model system for fundamental studies of radiation damage. Epitaxial thin films of Y2O3 were deposited by pulsed laser deposition on 8% Y:ZrO2 (YSZ) substrates with (100), (110), and (111) orientation. Metallic Fe was subsequently deposited by molecular beam epitaxy. Characterization by x-ray diffraction and Rutherford backscattering spectrometry in the channeling geometry revealed a degree of epitaxial or axiotaxial ntation for Fe(211) deposited on Y2O3(110)/YSZ(110). In contrast, Fe on Y2O3(111)/YSZ(111) was fullymore » polycrystalline, and Fe on Y2O3(100)/YSZ(100) exhibited out-of-plane texture in the [110] direction with little or no preferential in-plane orientation. Scanning transmission electron microscopy imaging of Fe(211)/Y2O3(110)/YSZ(110) revealed a strongly islanded morphology for the Fe film, with no epitaxial grains visible in the cross-sectional sample. Well-ordered Fe grains with no orientation to the underlying Y2O3 were observed. Well-ordered crystallites of Fe with both epitaxial and non-epitaxial orientations on Y2O3 are a promising model system for fundamental studies of radiation damage phenomena. This is illustrated with preliminary results of He bubble formation following implantation with a helium ion microscope. He bubble formation is shown to preferentially occur at the Fe/Y2O3 interface.« less

The North Galactic Pole Rift and the Local Hot Bubble

NASA Technical Reports Server (NTRS)

Snowden, S. L.; Koutroumpa, D.; Kuntz, K. D.; Lallement, R.; Puspitarini, L.

2015-01-01

The North Galactic Pole Rift (NGPR) is one of the few distinct neutral hydrogen clouds at high Galactic latitudes that have well-defined distances. It is located at the edge of the Local Cavity (LC) and provides an important test case for understanding the Local Hot Bubble (LHB), the presumed location for the hot diffuse plasma responsible for much of the observed 1/4 keV emission originating in the solar neighborhood. Using data from the ROSAT All- Sky Survey and the Planck reddening map, we find the path length within the LC (LHB plus Complex of Local Interstellar Clouds) to be 98 plus or minus 27 pc, in excellent agreement with the distance to the NGPR of 98 +/- 6 pc. In addition, we examine another 14 directions that are distributed over the sky where the LC wall is apparently optically thick at 1/4 keV. We find that the data in these directions are also consistent with the LHB model and a uniform emissivity plasma filling most of the LC.

Method of deposition by molecular beam epitaxy

DOEpatents

Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

1995-01-01

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

Method of deposition by molecular beam epitaxy

DOEpatents

Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

1995-01-10

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

Local deformation gradients in epitaxial Pb(Zr0.2Ti0.8)O3 layers investigated by transmission electron microscopy.

PubMed

Denneulin, T; Wollschläger, N; Everhardt, A S; Farokhipoor, S; Noheda, B; Snoeck, E; Hÿtch, M

2018-05-31

Lead zirconate titanate samples are used for their piezoelectric and ferroelectric properties in various types of micro-devices. Epitaxial layers of tetragonal perovskites have a tendency to relax by forming [Formula: see text] ferroelastic domains. The accommodation of the a/c/a/c polydomain structure on a flat substrate leads to nanoscale deformation gradients which locally influence the polarization by flexoelectric effect. Here, we investigated the deformation fields in epitaxial layers of Pb(Zr 0.2 Ti 0.8 )O 3 grown on SrTiO 3 substrates using transmission electron microscopy (TEM). We found that the deformation gradients depend on the domain walls inclination ([Formula: see text] or [Formula: see text] to the substrate interface) of the successive [Formula: see text] domains and we describe three different a/c/a domain configurations: one configuration with parallel a-domains and two configurations with perpendicular a-domains (V-shaped and hat-[Formula: see text]-shaped). In the parallel configuration, the c-domains contain horizontal and vertical gradients of out-of-plane deformation. In the V-shaped and hat-[Formula: see text]-shaped configurations, the c-domains exhibit a bending deformation field with vertical gradients of in-plane deformation. Each of these configurations is expected to have a different influence on the polarization and so the local properties of the film. The deformation gradients were measured using dark-field electron holography, a TEM technique, which offers a good sensitivity (0.1%) and a large field-of-view (hundreds of nanometers). The measurements are compared with finite element simulations.

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

A Near-Wall Reynolds-Stress Closure Without Wall Normals

NASA Technical Reports Server (NTRS)

Yuan, S. P.; So, R. M. C.

1997-01-01

Turbulent wall-bounded complex flows are commonly encountered in engineering practice and are of considerable interest in a variety of industrial applications. The presence of a wall significantly affects turbulence characteristics. In addition to the wall effects, turbulent wall-bounded flows become more complicated by the presence of additional body forces (e.g. centrifugal force and Coriolis force) and complex geometry. Most near-wall Reynolds stress models are developed from a high-Reynolds-number model which assumes turbulence is homogenous (or quasi-homogenous). Near-wall modifications are proposed to include wall effects in near-wall regions. In this process, wall normals are introduced. Good predictions could be obtained by Reynolds stress models with wall normals. However, ambiguity arises when the models are applied in flows with multiple walls. Many models have been proposed to model turbulent flows. Among them, Reynolds stress models, in which turbulent stresses are obtained by solving the Reynolds stress transport equations, have been proved to be the most successful ones. To apply the Reynolds stress models to wall-bounded flows, near-wall corrections accounting for the wall effects are needed, and the resulting models are called near-wall Reynolds stress models. In most of the existing near-wall models, the near-wall corrections invoke wall normals. These wall-dependent near-wall models are difficult to implement for turbulent flows with complex geometry and may give inaccurate predictions due to the ambiguity of wall normals at corners connecting multiple walls. The objective of this study is to develop a more general and flexible near-wall Reynolds stress model without using any wall-dependent variable for wall-bounded turbulent flows. With the aid of near-wall asymptotic analysis and results of direct numerical simulation, a new near-wall Reynolds stress model (NNWRS) is formulated based on Speziale et al.'s high-Reynolds-stress model with wall

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition.

PubMed

Carretero-Genevrier, Adrián; Gich, Martí

2015-12-21

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step process based on the preparation of a sol in a one-pot synthesis which is followed by the deposition of a gel film on Si(100) substrates by evaporation induced self-assembly using the dip-coating technique and ends with a thermal treatment of the material to induce the gel crystallization and the growth of the quartz film. The formation of a silica gel is based on the reaction of a tetraethyl orthosilicate and water, catalyzed by HCl, in ethanol. However, the solution contains two additional components that are essential for preparing mesoporous epitaxial quartz films from these silica gels dip-coated on Si. Alkaline earth ions, like Sr(2+) act as glass melting agents that facilitate the crystallization of silica and in combination with cetyl trimethylammonium bromide (CTAB) amphiphilic template form a phase separation responsible of the macroporosity of the films. The good matching between the quartz and silicon cell parameters is also essential in the stabilization of quartz over other SiO2 polymorphs and is at the origin of the epitaxial growth.

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

PubMed Central

Carretero-Genevrier, Adrián; Gich, Martí

2015-01-01

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step process based on the preparation of a sol in a one-pot synthesis which is followed by the deposition of a gel film on Si(100) substrates by evaporation induced self-assembly using the dip-coating technique and ends with a thermal treatment of the material to induce the gel crystallization and the growth of the quartz film. The formation of a silica gel is based on the reaction of a tetraethyl orthosilicate and water, catalyzed by HCl, in ethanol. However, the solution contains two additional components that are essential for preparing mesoporous epitaxial quartz films from these silica gels dip-coated on Si. Alkaline earth ions, like Sr2+ act as glass melting agents that facilitate the crystallization of silica and in combination with cetyl trimethylammonium bromide (CTAB) amphiphilic template form a phase separation responsible of the macroporosity of the films. The good matching between the quartz and silicon cell parameters is also essential in the stabilization of quartz over other SiO2 polymorphs and is at the origin of the epitaxial growth. PMID:26710210

Free-carrier mobility in GaN in the presence of dislocation walls

NASA Astrophysics Data System (ADS)

Farvacque, J.-L.; Bougrioua, Z.; Moerman, I.

2001-03-01

The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp transition separating a low- from a high-mobility regime. This separation appears as soon as the carrier density exceeds a critical value that depends on the growth process. Using low-field electrical transport simulations, we show that this particular mobility behavior cannot be simply interpreted in terms of dislocation scattering or trapping mechanisms, but that it is also controlled by the collective effect of dislocation walls (the columnar structure). As the free-carrier density increases, the more efficient screening properties result in the transition from a barrier-controlled mobility regime to a pure-diffusion-process-controlled mobility regime. The model permits us to reproduce the experimental mobility collapse quantitatively.

Nucleation of uniform mono- and bilayer epitaxial graphene on SiC(0001)

NASA Astrophysics Data System (ADS)

Wu, Xiaosong; Zhang, Rui; Dong, Yunliang; Guo, Shuai; Kong, Wenjie; Liao, Zhimin; Yu, Dapeng

2012-02-01

Early stage of epitaxial graphene growth on SiC(0001) has been investigated. Using the confinement controlled sublimation (CCS) method, we has achieved well controlled growth and been able to see the formation of mono- and bilayer graphene islands. The growth features reveal the intriguing growth mechanism. In particular, a new ``stepdown'' growth mode has been identified. Graphene can propagate tens of micrometers across many SiC steps, while, most importantly, step bunching is avoided and the initial regular stepped SiC surface morphology is preserved. The stepdown growth demonstrates a route towards uniform epitaxial graphene in wafer size without sacrificing the initial substrate surface morphology.

In vacancies in InN grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Reurings, Floris; Tuomisto, Filip; Gallinat, Chad S.; Koblmüller, Gregor; Speck, James S.

2010-12-01

The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In- and N-polar InN grown by plasma-assisted molecular beam epitaxy. The results suggest that the structural quality of the material and limited diffusion of surface adatoms during growth dictate the In vacancy formation in low electron-density undoped epitaxial InN, while growth conditions and thermodynamics have a less important role, contrary to what is observed in, e.g., GaN. Furthermore, the results imply that in high quality InN, the electron mobility is likely limited not by ionized point defect scattering, but rather by threading dislocations.

Improved process for epitaxial deposition of silicon on prediffused substrates

NASA Technical Reports Server (NTRS)

Clarke, M. G.; Halsor, J. L.; Word, J. C.

1968-01-01

Process for fabricating integrated circuits uniformly deposits silicon epitaxially on prediffused substrates without affecting the sublayer diffusion pattern. Two silicon deposits from different sources, and deposited at different temperatures, protect the sublayer pattern from the silicon tetrachloride reaction.

Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

NASA Astrophysics Data System (ADS)

Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji

2017-07-01

This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.

Universal Logarithmic Law of the Wall in Turbulent Channel and Pipe Flows

NASA Astrophysics Data System (ADS)

Zanoun, E.-S.; Durst, F.; Nagib, Hassan

2003-11-01

The accuracy of obtaining parameters of velocity distribution in the inertial sub-layer of wall-bounded flows depends on evaluating the wall friction and spatial resolution of measurements. By focusing on these aspects of experiments and extending the range of available channel data by a factor of two, our work confirms the log-law over a power-law representation for Re_τ≥ 2×10^3. Measurements in a fully-developed pipe reveal that velocity instruments such as hot-wires are superior to pressure probes for several reasons including spatial resolution. No general technique for correcting Pitot probe data exists, and the MacMillan's displacement correction drastically changes the slope of the logarithmic law. Oil-film interferometry coupled with hot-wire measurements were used to demonstrate effects of channel aspect ratio on results and to reveal that initial tripping has insignificant effects on the Kármán constant in the fully developed region. Data reveal evidence on differences in the outer flow between channels and pipes. In channels, we find that the inertial sub-range may be represented by the simple approximate formula ;U^+≈e ln y^++10/e and the fully developed channel resistance by c_f=0.0624 Re_m-0.25 or √2/c_f; ≈ ; e; ln Re √c_f+10/e+e;(ln1/√2-1).

Re-design and fabrication of titanium multi-wall Thermal Protection System (TPS) test panels

NASA Technical Reports Server (NTRS)

Blair, W.; Meaney, J. E., Jr.; Rosenthal, H. A.

1984-01-01

The Titanium Multi-wall Thermal Protection System (TIPS) panel was re-designed to incorporate Ti-6-2-4-2 outer sheets for the hot surface, ninety degree side closures for ease of construction and through panel fastness for ease of panel removal. Thermal and structural tests were performed to verify the design. Twenty-five panels were fabricated and delivered to NASA for evaluation at Langley Research Center and Johnson Space Center.

Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy.

PubMed

Krichevtsov, Boris B; Gastev, Sergei V; Suturin, Sergey M; Fedorov, Vladimir V; Korovin, Alexander M; Bursian, Viktor E; Banshchikov, Alexander G; Volkov, Mikhail P; Tabuchi, Masao; Sokolov, Nikolai S

2017-01-01

Thin (4-20 nm) yttrium iron garnet (Y 3 Fe 5 O 12 , YIG) layers have been grown on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , GGG) 111-oriented substrates by laser molecular beam epitaxy in 700-1000 °C growth temperature range. The layers were found to have atomically flat step-and-terrace surface morphology with step height of 1.8 Å characteristic for YIG(111) surface. As the growth temperature is increased from 700 to 1000 °C the terraces become wider and the growth gradually changes from layer by layer to step-flow regime. Crystal structure studied by electron and X-ray diffraction showed that YIG lattice is co-oriented and laterally pseudomorphic to GGG with small rhombohedral distortion present perpendicular to the surface. Measurements of magnetic moment, magneto-optical polar and longitudinal Kerr effect (MOKE), and X-ray magnetic circular dichroism (XMCD) were used for study of magnetization reversal for different orientations of magnetic field. These methods and ferromagnetic resonance studies have shown that in zero magnetic field magnetization lies in the film plane due to both shape and induced anisotropies. Vectorial MOKE studies have revealed the presence of an in-plane easy magnetization axis. In-plane magnetization reversal was shown to occur through combination of reversible rotation and abrupt irreversible magnetization jump, the latter caused by domain wall nucleation and propagation. The field at which the flip takes place depends on the angle between the applied magnetic field and the easy magnetization axis and can be described by the modified Stoner-Wohlfarth model taking into account magnetic field dependence of the domain wall energy. Magnetization curves of individual tetrahedral and octahedral magnetic Fe 3+ sublattices were studied by XMCD.

Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy

PubMed Central

Krichevtsov, Boris B.; Gastev, Sergei V.; Suturin, Sergey M.; Fedorov, Vladimir V.; Korovin, Alexander M.; Bursian, Viktor E.; Banshchikov, Alexander G.; Volkov, Mikhail P.; Tabuchi, Masao; Sokolov, Nikolai S.

2017-01-01

Abstract Thin (4–20 nm) yttrium iron garnet (Y3Fe5O12, YIG) layers have been grown on gadolinium gallium garnet (Gd3Ga5O12, GGG) 111-oriented substrates by laser molecular beam epitaxy in 700–1000 °C growth temperature range. The layers were found to have atomically flat step-and-terrace surface morphology with step height of 1.8 Å characteristic for YIG(111) surface. As the growth temperature is increased from 700 to 1000 °C the terraces become wider and the growth gradually changes from layer by layer to step-flow regime. Crystal structure studied by electron and X-ray diffraction showed that YIG lattice is co-oriented and laterally pseudomorphic to GGG with small rhombohedral distortion present perpendicular to the surface. Measurements of magnetic moment, magneto-optical polar and longitudinal Kerr effect (MOKE), and X-ray magnetic circular dichroism (XMCD) were used for study of magnetization reversal for different orientations of magnetic field. These methods and ferromagnetic resonance studies have shown that in zero magnetic field magnetization lies in the film plane due to both shape and induced anisotropies. Vectorial MOKE studies have revealed the presence of an in-plane easy magnetization axis. In-plane magnetization reversal was shown to occur through combination of reversible rotation and abrupt irreversible magnetization jump, the latter caused by domain wall nucleation and propagation. The field at which the flip takes place depends on the angle between the applied magnetic field and the easy magnetization axis and can be described by the modified Stoner–Wohlfarth model taking into account magnetic field dependence of the domain wall energy. Magnetization curves of individual tetrahedral and octahedral magnetic Fe3+ sublattices were studied by XMCD. PMID:28685003

Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Krichevtsov, Boris B.; Gastev, Sergei V.; Suturin, Sergey M.; Fedorov, Vladimir V.; Korovin, Alexander M.; Bursian, Viktor E.; Banshchikov, Alexander G.; Volkov, Mikhail P.; Tabuchi, Masao; Sokolov, Nikolai S.

2017-12-01

Thin (4-20 nm) yttrium iron garnet (Y3Fe5O12, YIG) layers have been grown on gadolinium gallium garnet (Gd3Ga5O12, GGG) 111-oriented substrates by laser molecular beam epitaxy in 700-1000 °C growth temperature range. The layers were found to have atomically flat step-and-terrace surface morphology with step height of 1.8 Å characteristic for YIG(111) surface. As the growth temperature is increased from 700 to 1000 °C the terraces become wider and the growth gradually changes from layer by layer to step-flow regime. Crystal structure studied by electron and X-ray diffraction showed that YIG lattice is co-oriented and laterally pseudomorphic to GGG with small rhombohedral distortion present perpendicular to the surface. Measurements of magnetic moment, magneto-optical polar and longitudinal Kerr effect (MOKE), and X-ray magnetic circular dichroism (XMCD) were used for study of magnetization reversal for different orientations of magnetic field. These methods and ferromagnetic resonance studies have shown that in zero magnetic field magnetization lies in the film plane due to both shape and induced anisotropies. Vectorial MOKE studies have revealed the presence of an in-plane easy magnetization axis. In-plane magnetization reversal was shown to occur through combination of reversible rotation and abrupt irreversible magnetization jump, the latter caused by domain wall nucleation and propagation. The field at which the flip takes place depends on the angle between the applied magnetic field and the easy magnetization axis and can be described by the modified Stoner-Wohlfarth model taking into account magnetic field dependence of the domain wall energy. Magnetization curves of individual tetrahedral and octahedral magnetic Fe3+ sublattices were studied by XMCD.

Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Yu; Meng, Dechao; Wang, Jianlin

2015-07-06

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high qualitymore » Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.« less

Suppression of Rotational Twins in Epitaxial B 12P 2 on 4H-SiC

DOE PAGES

Frye, C. D.; Saw, C. K.; Padavala, Balabalaji; ...

2017-12-22

B 12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [more » $$11\\bar{20}$$] and a custom miscut 4° toward the [$$1\\bar{10}0$$]. Epitaxy on substrates miscut to the [$$11\\bar{20}$$] resulted in highly twinned B 12P 2 films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$$1\\bar{10}0$$] produced films of >99% twin orientation I. A H 2 etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B 12P 2 twin orientations. Surface steps on substrates miscut to the [$$11\\bar{20}$$] tend to be zig-zagged with steps rotated 60° from one another producing B 12P 2 crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$$1\\bar{10}0$$] tend to be parallel resulting in crystallographically aligned B 12P 2 nucleation.« less

Suppression of Rotational Twins in Epitaxial B 12P 2 on 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frye, C. D.; Saw, C. K.; Padavala, Balabalaji

B 12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [more » $$11\\bar{20}$$] and a custom miscut 4° toward the [$$1\\bar{10}0$$]. Epitaxy on substrates miscut to the [$$11\\bar{20}$$] resulted in highly twinned B 12P 2 films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$$1\\bar{10}0$$] produced films of >99% twin orientation I. A H 2 etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B 12P 2 twin orientations. Surface steps on substrates miscut to the [$$11\\bar{20}$$] tend to be zig-zagged with steps rotated 60° from one another producing B 12P 2 crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$$1\\bar{10}0$$] tend to be parallel resulting in crystallographically aligned B 12P 2 nucleation.« less

Thermal Transmittance of Porous Hollow Clay Brick by Guarded Hot Box Method

NASA Astrophysics Data System (ADS)

Kim, Joonsoo

2018-03-01

The thermal property of a porous hollow clay brick was determined by measuring the thermal transmittance of the wall made of porous hollow clay bricks. Prior to the production of porous hollow clay bricks, nonporous and porous tiny clay bricks were prepared to determine the physico-mechanical properties by modifying the amount of wood flour and firing temperature. The bricks were produced by uniaxial pressing and then fired in an electric furnace. Their physico-mechanical properties were measured by water absorption, apparent porosity, bulk density, and compressive strength. The porous tiny clay bricks were produced with three types of wood flour: coarse wood flour (1-0.36 mm), medium-sized wood flour (0.36-0.15 mm), and fine wood flour (< 0.08 mm). The thermal transmittance of porous hollow clay bricks was determined through the guarded hot box method, which measures the wall made of porous hollow clay bricks and nonporous cement bricks. The two walls had a thermal transmittance of 1.42 and 2.72 W\\cdot m^{-2}\\cdot K^{-1}, respectively. The difference in thermal transmittance was due to the pores created with fine wood flour (< 0.08 mm) as a pore-forming agent.

Induced Superconductivity and Engineered Josephson Tunneling Devices in Epitaxial (111)-Oriented Gold/Vanadium Heterostructures.

PubMed

Wei, Peng; Katmis, Ferhat; Chang, Cui-Zu; Moodera, Jagadeesh S

2016-04-13

We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultrahigh vacuum conditions, we are able to achieve (111) oriented single phase of gold (Au) thin film grown on a well-oriented vanadium (V) s-wave superconductor film with clean interface. We obtained atomically smooth Au thin films with thicknesses even down to below a nanometer showing near-ideal surface quality. The as-grown V/Au bilayer heterostructure exhibits superconducting transition at around 3.9 K. Clear Josephson tunneling and Andreev reflection are observed in S-I-S tunnel junctions fabricated from the epitaxial bilayers. The barrier thickness dependent tunneling and the associated subharmonic gap structures (SGS) confirmed the induced superconductivity in Au (111), paving the way for engineering thin film heterostructures based on p-wave superconductivity and nano devices exploiting Majorana Fermions for quantum computing.

Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

NASA Astrophysics Data System (ADS)

Schleicher, B.; Niemann, R.; Diestel, A.; Hühne, R.; Schultz, L.; Fähler, S.

2015-08-01

Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth and martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, Darrell G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong; Singh, Rakesh K.; Xi, Xiaoxing

2017-12-01

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+δ, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsipas, P.; Kassavetis, S.; Tsoutsou, D.

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lin, Chia-Hung; Abe, Ryota; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya

2012-08-01

Growth optimization toward low angle incidence microchannel epitaxy (LAIMCE) of GaN was accomplished using ammonia-based metal-organic molecular beam epitaxy (NH3-based MOMBE). Firstly, the [NH3]/[trimethylgallium (TMG)] ratio (R) dependence of selective GaN growth was studied. The growth temperature was set at 860 °C while R was varied from 5 to 200 with precursors being supplied parallel to the openings cut in the SiO2 mask. The selectivity of the growth was superior for all R, because TMG and NH3 preferably decompose on the GaN film. The formation of {112¯0}GaN or {112¯2}GaN sidewalls and (0001)GaN surface were observed by the change in R. The intersurface diffusion of Ga adatoms was also changed by a change in R. Ga adatoms migrate from the sidewalls to the top at R lower than 50, whereas the migration weakened with R greater than 100. Secondly, LAIMCE was optimized by changing the growth temperature. Consequently, 6 μm wide lateral overgrowth in the direction of precursor incidence was achieved with no pit after etching by H3PO4, which was six times wider than that in the opposite direction.

Hot Film Velocity Measurements Downstream of a Swept Backward-Facing Step

DTIC Science & Technology

1990-08-01

WR ~4’ nol w of tdl. O64" $l"uwe. suite 424 i lV~lZdO . 00 to effice at UAqeww0fl" S4 aud ’mpeom t, 0edUOM ’l~c 004 S~ a lleq~k Dc 2010). I. AGENCY USE ...Velocity measurements were made using a single component hot film anemometer. Results from this study indicate the following: the flow in the recirculation...velocity component parallel to the step face retains a finite magnitude. Coles’ law of the wall and wake was used to corralate the data from this study. The

Multiphysics Thermal-Fluid Design Analysis of a Non-Nuclear Tester for Hot-Hydrogen Materials and Component Development

NASA Technical Reports Server (NTRS)

Wang, Ten-See; Foote, John; Litchford, Ron

2006-01-01

The objective of this effort is to perform design analyses for a non-nuclear hot-hydrogen materials tester, as a first step towards developing efficient and accurate multiphysics, thermo-fluid computational methodology to predict environments for hypothetical solid-core, nuclear thermal engine thrust chamber design and analysis. The computational methodology is based on a multidimensional, finite-volume, turbulent, chemically reacting, thermally radiating, unstructured-grid, and pressure-based formulation. The multiphysics invoked in this study include hydrogen dissociation kinetics and thermodynamics, turbulent flow, convective, and thermal radiative heat transfers. The goals of the design analyses are to maintain maximum hot-hydrogen jet impingement energy and to minimize chamber wall heating. The results of analyses on three test fixture configurations and the rationale for final selection are presented. The interrogation of physics revealed that reactions of hydrogen dissociation and recombination are highly correlated with local temperature and are necessary for accurate prediction of the hot-hydrogen jet temperature.

Smooth- and rough-wall boundary layer structure from high spatial range particle image velocimetry

NASA Astrophysics Data System (ADS)

Squire, D. T.; Morrill-Winter, C.; Hutchins, N.; Marusic, I.; Schultz, M. P.; Klewicki, J. C.

2016-10-01

Two particle image velocimetry arrangements are used to make true spatial comparisons between smooth- and rough-wall boundary layers at high Reynolds numbers across a very wide range of streamwise scales. Together, the arrangements resolve scales ranging from motions on the order of the Kolmogorov microscale to those longer than twice the boundary layer thickness. The rough-wall experiments were obtained above a continuous sandpaper sheet, identical to that used by Squire et al. [J. Fluid Mech. 795, 210 (2016), 10.1017/jfm.2016.196], and cover a range of friction and equivalent sand-grain roughness Reynolds numbers (12 000 ≲δ+≲ 18000, 62 ≲ks+≲104 ). The smooth-wall experiments comprise new and previously published data spanning 6500 ≲δ+≲17 000 . Flow statistics from all experiments show similar Reynolds number trends and behaviors to recent, well-resolved hot-wire anemometry measurements above the same rough surface. Comparisons, at matched δ+, between smooth- and rough-wall two-point correlation maps and two-point magnitude-squared coherence maps demonstrate that spatially the outer region of the boundary layer is the same between the two flows. This is apparently true even at wall-normal locations where the total (inner-normalized) energy differs between the smooth and rough wall. Generally, the present results provide strong support for Townsend's [The Structure of Turbulent Shear Flow (Cambridge University Press, Cambridge, 1956), Vol. 1] wall-similarity hypothesis in high Reynolds number fully rough boundary layer flows.

Croissance epitaxiale de GaAs sur substrats de Ge par epitaxie par faisceaux chimiques

NASA Astrophysics Data System (ADS)

Belanger, Simon

La situation energetique et les enjeux environnementaux auxquels la societe est confrontee entrainent un interet grandissant pour la production d'electricite a partir de l'energie solaire. Parmi les technologies actuellement disponibles, la filiere du photovoltaique a concentrateur solaire (CPV pour concentrator photovoltaics) possede un rendement superieur et mi potentiel interessant a condition que ses couts de production soient competitifs. La methode d'epitaxie par faisceaux chimiques (CBE pour chemical beam epitaxy) possede plusieurs caracteristiques qui la rendent interessante pour la production a grande echelle de cellules photovoltaiques a jonctions multiples a base de semi-conducteurs III-V. Ce type de cellule possede la meilleure efficacite atteinte a ce jour et est utilise sur les satellites et les systemes photovoltaiques a concentrateur solaire (CPV) les plus efficaces. Une des principales forces de la technique CBE se trouve dans son potentiel d'efficacite d'utilisation des materiaux source qui est superieur a celui de la technique d'epitaxie qui est couramment utilisee pour la production a grande echelle de ces cellules. Ce memoire de maitrise presente les travaux effectues dans le but d'evaluer le potentiel de la technique CBE pour realiser la croissance de couches de GaAs sur des substrats de Ge. Cette croissance constitue la premiere etape de fabrication de nombreux modeles de cellules solaires a haute performance decrites plus haut. La realisation de ce projet a necessite le developpement d'un procede de preparation de surface pour les substrats de germanium, la realisation de nombreuses sceances de croissance epitaxiale et la caracterisation des materiaux obtenus par microscopie optique, microscopie a force atomique (AFM), diffraction des rayons-X a haute resolution (HRXRD), microscopie electronique a transmission (TEM), photoluminescence a basse temperature (LTPL) et spectrometrie de masse des ions secondaires (SIMS). Les experiences ont permis

Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Washizu, Tomoya; Ike, Shinichi; Inuzuka, Yuki; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

2017-06-01

Selective epitaxial growth of Ge and Ge1-xSnx layers on Si substrates was performed by using metal-organic chemical vapor deposition (MOCVD) with precursors of tertiary-butyl-germane (t-BGe) and tri-butyl-vinyl-tin (TBVSn). We investigated the effects of growth temperature and total pressure during growth on the selectivity and the crystallinity of the Ge and Ge1-xSnx epitaxial layers. Under low total pressure growth conditions, the dominant mechanism of the selective growth of Ge epitaxial layers is the desorption of the Ge precursors. At a high total pressure case, it is needed to control the surface migration of precursors to realize the selectivity because the desorption of Ge precursors was suppressed. The selectivity of Ge growth was improved by diffusion of the Ge precursors on the SiO2 surfaces when patterned substrates were used at a high total pressure. The selective epitaxial growth of Ge1-xSnx layer was also realized using MOCVD. We found that the Sn precursors less likely to desorb from the SiO2 surfaces than the Ge precursors.

Metal-Insulator Transitions in Epitaxial LaVO(3) and LaTiO(3) Films

DTIC Science & Technology

2012-08-01

epitaxial films of LaVO3 and LaTiO3 can exhibit metallicity though their bulk counterparts are Mott insulators. When LaTiO3 films are compressively...secondarily to interface electronic reconstruction at the LaTiO3 /SrTiO3 interface. However, when LaVO3 films are compressively strained on SrTiO3...ABSTRACT We have demonstrated that epitaxial films of LaVO3 and LaTiO3 can exhibit metallicity though their bulk counterparts are Mott insulators. When

Sharp chemical interface in epitaxial Fe{sub 3}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gálvez, S.; Rubio-Zuazo, J., E-mail: rubio@esrf.fr; Salas-Colera, E.

Chemically sharp interface was obtained on single phase single oriented Fe{sub 3}O{sub 4} (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

PubMed

Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

2009-04-01

Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

Epitaxial lateral overgrowth of GaAs: effect of doping on LPE growth behaviour

NASA Astrophysics Data System (ADS)

Zytkiewicz, Z. R.; Dobosz, D.; Pawlowska, M.

1999-05-01

Results of epitaxial lateral overgrowth (ELO) of GaAs on (001) GaAs substrates by liquid phase epitaxy are reported. We show that by introducing Si, Sn or Te impurities to the Ga-As solution the vertical growth rate is reduced while the lateral growth rate is significantly enhanced, which leads to a growth habit modification. Furthermore, the impurity incorporation into the growing layer is different on the upper and side surfaces of the ELO, reflecting the fundamental differences between the lateral and vertical growth modes. This phenomenon can be applied for studying the temporal development of ELO layers.

Ferroelectric domain structure of anisotropically strained NaNbO3 epitaxial thin films

NASA Astrophysics Data System (ADS)

Schwarzkopf, J.; Braun, D.; Schmidbauer, M.; Duk, A.; Wördenweber, R.

2014-05-01

NaNbO3 thin films have been grown under anisotropic biaxial strain on several oxide substrates by liquid-delivery spin metalorganic chemical vapor deposition. Compressive lattice strain of different magnitude, induced by the deposition of NaNbO3 films with varying film thickness on NdGaO3 single crystalline substrates, leads to modifications of film orientation and phase symmetry, which are similar to the phase transitions in Pb-containing oxides near the morphotropic phase boundary. Piezoresponse force microscopy measurements exhibit large out-of-plane polarization components, but no distinctive domain structure, while C-V measurements indicate relaxor properties in these films. When tensile strain is provoked by the epitaxial growth on DyScO3, TbScO3, and GdScO3 single crystalline substrates, NaNbO3 films behave rather like a normal ferroelectric. The application of these rare-earth scandate substrates yields well-ordered ferroelectric stripe domains of the type a1/a2 with coherent domain walls aligned along the [001] substrate direction as long as the films are fully strained. With increasing plastic lattice relaxation, initially, a 2D domain pattern with still exclusively in-plane electric polarization, and finally, domains with in-plane and out-of-plane polar components evolve.

Growth and Characterization of Epitaxial Piezoelectric and Semiconductor Films.

DTIC Science & Technology

1980-07-01

quality epitaxial films at low growth rates. This process is limited to films up to a few microns thickness. The aluminum chloride/ ammonia CVD process has... scrubber through a rotary Vacuum pump maintaining Reactions.-DEZ is an electron deficient compound a pressure of about 400 Torr inside the reaction chain

Electron mobility enhancement in epitaxial multilayer Si-Si/1-x/Ge/x/ alloy films on /100/Si

NASA Technical Reports Server (NTRS)

Manasevit, H. M.; Gergis, I. S.; Jones, A. B.

1982-01-01

Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.

Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; George, T.; Pike, W. T.

1992-01-01

We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

Simultaneous wall-shear-stress and wide-field PIV measurements in a turbulent boundary layer

NASA Astrophysics Data System (ADS)

Gomit, Guillaume; Fourrie, Gregoire; de Kat, Roeland; Ganapathisubramani, Bharathram

2015-11-01

Simultaneous particle image velocimetry (PIV) and hot-film shear stress sensor measurements were performed to study the large-scale structures associated with shear stress events in a flat plate turbulent boundary layer at a high Reynolds number (Reτ ~ 4000). The PIV measurement was performed in a streamwise-wall normal plane using an array of six high resolution cameras (4 ×16MP and 2 ×29MP). The resulting field of view covers 8 δ (where δ is the boundary layer thickness) in the streamwise direction and captures the entire boundary layer in the wall-normal direction. The spatial resolution of the measurement is approximately is approximately 70 wall units (1.8 mm) and sampled each 35 wall units (0.9 mm). In association with the PIV setup, a spanwise array of 10 skin-friction sensors (spanning one δ) was used to capture the footprint of the large-scale structures. This combination of measurements allowed the analysis of the three-dimensional conditional structures in the boundary layer. Particularly, from conditional averages, the 3D organisation of the wall normal and streamwise velocity components (u and v) and the Reynolds shear stress (-u'v') related to a low and high shear stress events can be extracted. European Research Council Grant No-277472-WBT.

Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

2000-01-01

Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

A reliable method to grow vertically-aligned silicon nanowires by a novel ramp-cooling process

NASA Astrophysics Data System (ADS)

Ho, Tzuen-Wei; Hong, Franklin Chau-Nan

2012-08-01

We have grown silicon nanowires (SiNWs) on Si (1 1 1) substrates by gold-catalyzed vapor-liquid-solid (VLS) process using tetrachlorosilane (SiCl4) in a hot-wall chemical vapor deposition reactor. Even under the optimized conditions including H2 annealing to reduce the surface native oxide, epitaxial SiNWs of 150-200 nm in diameter often grew along all four <1 1 1> family directions with one direction vertical and three others inclined to the surface. Therefore, the growth of high degree ordered SiNW arrays along [1 1 1] only was attempted on Au-coated Si (1 1 1) by a ramp-cooling process utilizing the liquid phase epitaxy (LPE) mechanism. The Au-coated Si substrate was first annealed in H2 at 650 °C to form Au-Si alloy nanoparticles, and then ramp-cooled at a controlled rate to precipitate epitaxial Si seeds on the substrate based on LPE mechanism. The substrate was further heated in SiCl4/H2 to 850 °C for the VLS growths of SiNWs on the Si seeds. Thus, almost 100% vertically-aligned SiNWs along [1 1 1] only could be reproducibly grown on Si (1 1 1), without using a template or patterning the metal catalyst. The high-density vertically-aligned SiNWs have good potentials for solar cells and nano-devices.

Plasma-assisted MBE growth kinetics and characterization studies of wide bandgap III-V epitaxial materials

NASA Astrophysics Data System (ADS)

O'Steen, Mark Lee

2000-10-01

Scope and method of study. The purpose of this research was to understand the physics of RF plasma-assisted molecular beam epitaxial growth of GaN epitaxial films and InGaN/GaN superlattice structures grown on Al2O3 (0001) substrates. The techniques used to characterize the RF-MBE grown samples include in situ reflection high energy electron diffraction (RHEED) and optical pyrometry, and ex situ spatially-resolved high resolution X-ray diffraction, spatially-resolved reflectance spectroscopy, atomic force microscopy, and low-temperature photoluminescence (PL) spectroscopy. Findings and conclusions. RF plasma-assisted molecular beam epitaxy (RF-MBE) has been used to grow GaN epitaxial films and InGaN/GaN superlattice structures. The most important growth parameters in the growth of GaN epitaxial films were identified as the substrate temperature, incident N*/Ga flux ratio, and GaN growth rate. The effect of these growth parameters on GaN growth and quality of GaN epitaxial films is discussed. Additionally, an interpretation of the effects of growth conditions on the underlying microscopic growth processes occurring is presented. All of the observed GaN growth results may be understood in terms of these microscopic growth processes. InGaN/GaN superlattice samples are grown to identify and quantitatively access the InGaN growth phenomenology. It is inferred that InN requires a higher N*/III flux ratio than does GaN for stoichiometric growth. At substrate temperatures below 590°C, the In composition of the superlattice samples is nominally constant. However, in the narrow temperature range 590--670°C, the In composition decreases by more than an order-or-magnitude at the lowest N*/III flux ratio of this study. Additionally, the incident N*/III flux ratio is found to strongly influence the In composition as well. Nearly an order-of-magnitude increase in In composition is observed despite only a 20% increase in the N*/III flux ratio at the highest temperature of this

Heliospheric structure. The bow wave and the hydrogen wall

DOE PAGES

Zank, G. P.; Heerikhuisen, J.; Wood, B. E.; ...

2012-12-28

Some recent IBEX observations indicate that the local interstellar medium (LISM) flow speed is less than previously thought (23.2 km s -1 rather than 26 km s -1). Reasonable LISM plasma parameters indicate that the LISM flow may be either marginally super-fast magnetosonic or sub-fast magnetosonic. This raises two challenging questions: (1) Can a LISM model that is barely super-fast or sub-fast magnetosonic account for Lyα observations that rely critically on the additional absorption provided by the hydrogen wall (H-wall)? and (2) If the LISM flow is weakly super-fast magnetosonic, does the transition assume the form of a traditional shockmore » or does neutral hydrogen (H) mediate shock dissipation and hence structure through charge exchange? Both questions are addressed using three three-dimensional self-consistently coupled magnetohydrodynamic plasma—kinetic H models with different LISM magnetic field strengths (2, 3, and 4 μG) as well as plasma and neutral H number densities. The 2 and 3 μG models are fast magnetosonic far upwind of the heliopause whereas the 4 μG model is fully subsonic. The 2 μG model admits a broad (~50-75 AU) bow-shock-like structure. The 3 μG model has a smooth super-fast-sub-fast magnetosonic transition that resembles a very broad, ~200 AU thick, bow wave. A theoretical analysis shows that the transition from a super-fast to a sub-fast magnetosonic downstream state is due to the charge exchange of fast neutral H and hot neutral H created in the supersonic solar wind and hot inner heliosheath, respectively. For both the 2 μG and the 3 μG models, the super-fast magnetosonic LISM flow passes through a critical point located where the fast magnetosonic Mach number M = 1 and Qe = γ/(γ - 1)UQm , where Qe and Qm are the plasma energy and momentum source terms due to charge exchange, U is the LISM flow speed, and γ is the plasma adiabatic index. Because the Mach number is only barely super-fast magnetosonic in the 3 μG case, the

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

NASA Astrophysics Data System (ADS)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp; Micro System Integration Center; Isobe, Shigehito

2015-09-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Schumann, T.; Lopes, J. M. J.; Wofford, J. M.; Oliveira, M. H.; Dubslaff, M.; Hanke, M.; Jahn, U.; Geelhaar, L.; Riechert, H.

2015-09-01

We examine how substrate selection impacts the resulting film properties in graphene growth by molecular beam epitaxy (MBE). Graphene growth on metallic as well as dielectric templates was investigated. We find that MBE offers control over the number of atomic graphene layers regardless of the substrate used. High structural quality could be achieved for graphene prepared on Ni (111) films which were epitaxially grown on MgO (111). For growth either on Al2O3 (0001) or on (6√3×6√3)R30°-reconstructed SiC (0001) surfaces, graphene with a higher density of defects is obtained. Interestingly, despite their defective nature, the layers possess a well defined epitaxial relation to the underlying substrate. These results demonstrate the feasibility of MBE as a technique for realizing the scalable synthesis of this two-dimensional crystal on a variety of substrates.

Scalding in Turkish children: comparison of burns caused by hot water and hot milk.

PubMed

Tarim, Akin; Nursal, Tarik Zafer; Basaran, Ozgür; Yildirim, Sedat; Türk, Emin; Moray, Gökhan; Haberal, Mehmet

2006-06-01

Our aim in this study was to compare the clinical differences and etiologic risk factors for hot water and hot milk scald burns in Turkish children. The retrospective study examined the cases of 140 children aged 0.1-7 years who had scald burns treated in three burn units of a Turkish hospital network between March 2000 and December 2004. The patients were categorized in two groups: hot water burns or hot milk burns. Ninety-five (67.9%) patients had hot water burns and 45 (47.1%) had hot milk burns. The proportion of patients with hot milk burns who lived in rural areas was significantly higher than the corresponding proportion for the hot water cases (75.6% versus 52.6%, respectively; p<0.01). In 20 (44%) of the hot milk cases, the burn was caused by milk being boiled in large pots outdoors for cheese production. The other 25 hot milk cases were caused by milk being boiled in the kitchen. The mean (+/-S.D.) percentage total body surface area burned in the hot milk cases was higher than that in the hot water cases (33.6+/-2.24% versus 21.42+/-1.43%, respectively; p<0.001), and the corresponding mean percentages of TBSA with full-thickness burns were 9.2+/-2.52% versus 3.13+/-0.83%, respectively; (p=0.083). The mean percentages of TBSA with second-degree burns showed the same trend (29.0+/-12.39% versus 18.8+/-1.47%, respectively; p<0.001) higher percentage of the children with hot milk burns required antibiotics (78% versus 52.8%, respectively; p<0.006). Seven (7.4%) of the hot water burn patients and 15 (33.3%) of the hot milk burn patients died during the study period (p=0.025; overall mortality rate 15.7%). Children scalded with hot milk tend to have more extensive burns, and thus have higher mortality, than those scalded with hot water. To create effective programs for preventing scald injuries in Turkey and elsewhere, it is essential to consider ethnic and cultural issues based on these characteristics. Simple precautions should be explained and methods of

Pseudorotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)

DOE PAGES

Steinrück, H. -G.; Magerl, A.; Deutsch, M.; ...

2014-10-06

The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by Å-resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% – 3% to the sapphire’s and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in themore » crystalline coherence length of the SAM’s powderlike crystallites when rotationally aligned with the sapphire’s lattice. As a result, the increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.« less

The use of heterogeneous and epitaxial nucleants to promote the growth of protein crystals

NASA Technical Reports Server (NTRS)

Mcpherson, Alexander; Shlichta, P.

1988-01-01

Fifty different mineral samples were tested as potential heterogeneous or epitaxial nucleants for four commonly crystallized proteins. It was found, using conventional protein crystallization techniques, that for each protein there was a set of mineral substrates that promoted nucleation of crystals at lower critical levels of supersaturation than required for spontaneous growth. In at least one case, the growth of lysozyme on the mineral apophyllite, it was shown by lattice analysis and X-ray diffraction that the nucleation and growth of the protein crystal on the mineral was likely to be truly epitaxial.

Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions.

PubMed

Chou, Yi-Chia; Tang, Wei; Chiou, Chien-Jyun; Chen, Kai; Minor, Andrew M; Tu, K N

2015-06-10

Effects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a Si nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.

Optical Epitaxial Growth of Gold Nanoparticle Arrays.

PubMed

Huang, Ningfeng; Martínez, Luis Javier; Jaquay, Eric; Nakano, Aiichiro; Povinelli, Michelle L

2015-09-09

We use an optical analogue of epitaxial growth to assemble gold nanoparticles into 2D arrays. Particles are attracted to a growth template via optical forces and interact through optical binding. Competition between effects determines the final particle arrangements. We use a Monte Carlo model to design a template that favors growth of hexagonal particle arrays. We experimentally demonstrate growth of a highly stable array of 50 gold particles with 200 nm diameter, spaced by 1.1 μm.

Epitaxial growth of InGaN nanowire arrays for light emitting diodes.

PubMed

Hahn, Christopher; Zhang, Zhaoyu; Fu, Anthony; Wu, Cheng Hao; Hwang, Yun Jeong; Gargas, Daniel J; Yang, Peidong

2011-05-24

Significant synthetic challenges remain for the epitaxial growth of high-quality InGaN across the entire compositional range. One strategy to address these challenges has been to use the nanowire geometry because of its strain relieving properties. Here, we demonstrate the heteroepitaxial growth of In(x)Ga(1-x)N nanowire arrays (0.06 ≤ x ≤ 0.43) on c-plane sapphire (Al(2)O(3)(001)) using a halide chemical vapor deposition (HCVD) technique. Scanning electron microscopy and X-ray diffraction characterization confirmed the long-range order and epitaxy of vertically oriented nanowires. Structural characterization by transmission electron microscopy showed that single crystalline nanowires were grown in the ⟨002⟩ direction. Optical properties of InGaN nanowire arrays were investigated by absorption and photoluminescence measurements. These measurements show the tunable direct band gap properties of InGaN nanowires into the yellow-orange region of the visible spectrum. To demonstrate the utility of our HCVD method for implementation into devices, LEDs were fabricated from In(x)Ga(1-x)N nanowires epitaxially grown on p-GaN(001). Devices showed blue (x = 0.06), green (x = 0.28), and orange (x = 0.43) electroluminescence, demonstrating electrically driven color tunable emission from this p-n junction.

A wall-free climate unit for acoustic levitators.

PubMed

Schlegel, M C; Wenzel, K-J; Sarfraz, A; Panne, U; Emmerling, F

2012-05-01

Acoustic levitation represents the physical background of trapping a sample in a standing acoustic wave with no contact to the wave generating device. For the last three decades, sample holders based on this effect have been commonly used for contact free handling of samples coupled with a number of analytical techniques. In this study, a wall-free climate unit is presented, which allows the control of the environmental conditions of suspended samples. The insulation is based on a continuous cold/hot gas flow around the sample and thus does not require any additional isolation material. This provides a direct access to the levitated sample and circumvents any influence of the climate unit material to the running analyses.

A wall-free climate unit for acoustic levitators

NASA Astrophysics Data System (ADS)

Schlegel, M. C.; Wenzel, K.-J.; Sarfraz, A.; Panne, U.; Emmerling, F.

2012-05-01

Acoustic levitation represents the physical background of trapping a sample in a standing acoustic wave with no contact to the wave generating device. For the last three decades, sample holders based on this effect have been commonly used for contact free handling of samples coupled with a number of analytical techniques. In this study, a wall-free climate unit is presented, which allows the control of the environmental conditions of suspended samples. The insulation is based on a continuous cold/hot gas flow around the sample and thus does not require any additional isolation material. This provides a direct access to the levitated sample and circumvents any influence of the climate unit material to the running analyses.

An assessment for the erosion rate of DEMO first wall

NASA Astrophysics Data System (ADS)

Tokar, M. Z.

2018-01-01

In a fusion reactor a significant fraction of plasma particles lost from the confined volume will reach the vessel wall. The recombination of these charged species, electrons and ions of hydrogen isotopes, is a source of neutral molecules and atoms, recycling back into the plasma. Here they participate, in particular, in charge-exchange (c-x) collisions with the plasma ions and, as a result, atoms of high energies with chaotically oriented velocities are generated. A significant fraction of these hot neutrals will hit the wall, leading, as well as the outflowing fuel and impurity ions, to its erosion, limiting the reactor operation time. The rate of the wall erosion in DEMO is assessed by applying a one-dimensional model which takes into account the transport of charged and neutral species across the flux surfaces in the main part of the scrape-off layer, beyond the X-point vicinity and divertor, and by considering the shift of the centers of flux surfaces, their elongation and triangularity. Atoms generated by c-x of recycling neutrals are modeled kinetically to define firmly their energy spectrum, being of particular importance for the erosion assessment. It is demonstrated the erosion rate of the DEMO wall armor of tungsten will have a pronounced ballooning character with a significant maximum of 0.3 mm per full power year at the low field side, decreasing with an increase in the anomalous perpendicular transport in the ‘far’ SOL or the plasma density at the separatrix.

Preferentially etched epitaxial liftoff of InP material

NASA Technical Reports Server (NTRS)

Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); Deangelo, Frank L. (Inventor)

1995-01-01

The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

Preferentially Etched Epitaxial Liftoff of InP Material

NASA Technical Reports Server (NTRS)

Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); DeAngelo, Frank L. (Inventor)

1997-01-01

The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

Molecular beam epitaxially grown copper indium diselenide and copper gallium diselenide films

NASA Astrophysics Data System (ADS)

Yoon, Seokhyun

2005-12-01

To eliminate the influence of grain boundaries, CuInSe2 (CIS) and CuGaSe2 (CGS) films were grown on (100) GaAs wafers. The effects of Cu to III metal ratio and dosing with Na on the growth mode and defect properties were studied at two growth temperatures. The impact of post-annealing in Se on the defect structure of CGS film was also studied. Two-dimensional simulations were used to better understand the role of grain boundary on cell performance. For growth at 360°C, the In-rich CIS films were polycrystalline, whereas the Cu-rich CIS films were epitaxial exhibiting a Stranski-Krastanov (S-K) growth mode. It is proposed that a Cu-Se secondary phase enhances the mobility of adatoms, allowing epitaxial growth to a critical thickness, at which point segregation at the nucleation sites became faster the rate of growth. Island structures, embedded in a matrix region, were oriented along the [01-1] directed edges with surface undulations apparent on the matrix surface with dominant {112} crystal planes. At the higher growth temperature of 464°C, the CIS films grew epitaxially without the need of a Cu-Se phase. Both CIS films grown at low and high temperatures were nearly relaxed. The segregation of epitaxial Cu1.5Se was also observed in the Cu-rich, Na-dosed CIS film, which is attributed to a surfactant effect of Na. At a growth temperature of 438°C, CGS films showed a S-K growth mode and nearly pseudomorphic growth. Hemispherical islands with twins were observed in the Ga-rich CGS films and epitaxial Cu1.5Se phase were identified in the top region of the island structure. From the PL analysis of Cu-rich, Na-dosed CGS film after Se-annealing, a new defect level located 20 meV above the valence band edge was identified as NaGa acceptor state. Two-dimensional simulation of the impact of grain boundaries on device performance showed that the short circuit current decreases sharply along with the other device parameters below a critical grain size due to the complete

Molecular beam epitaxy and characterization of stannic oxide

NASA Astrophysics Data System (ADS)

White, Mark Earl

Wide bandgap oxides such as tin-doped indium oxide (ITO), zinc oxide (ZnO), and tin oxide (SnO2) are currently used in a variety of technologically important applications, including gas sensors and transparent conducting films for devices such as flat panel displays and photovoltaics. Due to the focus on industrial applications, prior research did not investigate the basic material properties of SnO2 films due to unoptimized growth methods such as RF sputtering and pulsed laser deposition which produced low resistance, polycrystalline films. Beyond these applications, few attempts to enhance and control the fundamental SnO2 properties for semiconducting applications have been reported. This work develops the heteroepitaxy of SnO2 thin films on r-plane Al2O3 by plasma-assisted molecular beam epitaxy (PA-MBE) and demonstrates control of the electrical transport of those films. Phase-pure, epitaxial single crystalline films were controllably and reproducibly grown. X-ray diffraction measurements indicated that these films exhibited the highest structural quality reported. Depending on the epitaxial conditions, tin- and oxygen-rich growth regimes were observed. An unexpected growth rate decrease in the tin-rich regime was determined to be caused by volatile suboxide formation. Excellent transport properties for naturally n-type SnO2 were achieved: the electron mobility, mu, was 103 cm2/V s at a concentration, n, of 2.7 x 1017 cm-3. To control the bulk electron density, antimony was used as an intentional n-type dopant. Antimony-doped film properties showed the highest reported mobilities for doped films (mu = 36 cm2/V s for n = 2.8 x 10 20 cm-3). Films doped with indium had resistivities over five orders-of-magnitude greater than undoped films. These highly resistive films provided a method to control the electrical transport properties. Further research will facilitate detailed studies of the fundamental properties of SnO2 and its development as an oxide with full

Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

NASA Technical Reports Server (NTRS)

Radhakrishnan, G.; Mccullough, O.; Cser, J.; Katz, J.

1988-01-01

Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.

The distribution of hot spots

NASA Technical Reports Server (NTRS)

Stefanick, M.; Jurdy, D. M.

1984-01-01

Statistical analyses are compared for two published hot spot data sets, one minimal set of 42 and another larger set of 117, using three different approaches. First, the earths surface is divided into 16 equal-area fractions and the observed distribution of hot spots among them is analyzed using chi-square tests. Second, cumulative distributions about the principal axes of the hot spot inertia tensor are used to describe hot spot distribution. Finally, a hot spot density function is constructed for each of the two hot spot data sets. The methods all indicate that hot spots have a nonuniform distribution, even when statistical fluctuations are considered. To the first order, hot spots are concentrated on one half of of the earth's surface area; within that portion, the distribution is consistent with a uniform distribution. The observed hot spot densities for neither data set are explained solely by plate speed.

Automatic hot wire GTA welding of pipe offers speed and increased deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sykes, I.; Digiacomo, J.

1995-07-01

Heavy-wall pipe welding for the power and petrochemical industry must meet code requirements. Contractors strive to meet these requirements in the most productive way possible. The challenge put to orbital welding equipment manufacturers is to produce pipe welding equipment that cost-effectively produces code-quality welds. Orbital welding equipment using the GTA process has long produced outstanding quality results but has lacked the deposition rate to compete cost effectively with other manual and semiautomatic processes such as SMAW, FCAW and GMAW. In recent years, significant progress has been made with the use of narrow-groove weld joint designs to reduce weld joint volumemore » and improve welding times. Astro Arc Polysoude, an orbital welding equipment manufacturer based in Sun Valley, Calif., and Nantes, France, has combined the hot wire GTAW process with orbital welding equipment using a narrow-groove weld joint design. Field test results show this process and procedure is a good alternative for many heavy-wall-pipe welding applications.« less

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-01

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

PubMed

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-27

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Epitaxial growth mechanisms of graphene and effects of substrates

NASA Astrophysics Data System (ADS)

Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

2012-06-01

The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth.

Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Hong, Seungbum; Bowden, Mark E.

2018-02-14

Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200°C due to the low Curie temperature of the piezoelectric material. High temperature piezoelectric materials such as La2Ti2O7 (LTO) would facilitate the development of high-temperature sensors if the piezoelectric coupling coefficient could be maximized. We have deposited epitaxial LTO films on SrTiO3(001), SrTiO3(110), and rutile TiO2(110) substrates by pulsed laser deposition, and show that the crystalline orientation of the LTO film, and thus its piezoelectric coupling direction, can be controlled by epitaxial matching to the substrate. The structure and phase purity of the films were investigated by x-raymore » diffraction and scanning transmission electron microscopy. To characterize the piezoelectric properties, piezoresponse force microscopy was used to measure the in-plane and out-of-plane piezoelectric coupling in the films. We find that the strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric crystalline direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO2(110) results in epitaxial La2/3TiO3, an orthorhombic perovskite of interest as a microwave dielectric material. La2/3TiO3 can be difficult to stabilize in bulk form, and epitaxial deposition has not been previously reported. These results confirm that control of the crystalline orientation of LTO-based materials can increase the out-of-plane strength of its piezoelectric coupling, which can be exploited in piezoelectric devices.« less

Wall characterization for through-the-wall radar applications

NASA Astrophysics Data System (ADS)

Greneker, Gene; Rausch, E. O.

2008-04-01

There has been continuing interest in the penetration of multilayer building materials, such as wood walls with air gaps and concrete hollow core block, using through-the-wall (TTW) radar systems. TTW operational techniques and signal propagation paths vary depending on how the TTW system is intended to be operated. For example, the operator of a TTW radar may be required to place the radar against the intervening wall of interest while collecting data. Other operational doctrines allow the radar to be operated in a stand-off mode from the wall. The stand-off distances can vary from feet to hundreds of feet, depending on the type of radar being used. When a signal is propagated through a multilayer wall with air gaps between the material and the wall construction uses materials of radically different dielectric constants, attenuation may not be the only effect that the probing signal experiences passing through the wall. This paper presents measurements of a hollow core concrete block wall and the measurement of a standard wall constructed of siding and wallboard. Both types of walls are typically found in most U.S. homes. These limited measurements demonstrate that the type of wall being penetrated by a wideband signal can modify the probing signal.

Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

PubMed

Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

2012-09-12

By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers

NASA Astrophysics Data System (ADS)

Nguyen, Khai V.; Chaudhuri, Sandeep K.; Mandal, Krishna C.

2014-09-01

The surface leakage current of high-resolution 4H-SiC epitaxial layer Schottky barrier detectors has been improved significantly after surface passivations of 4H-SiC epitaxial layers. Thin (nanometer range) layers of silicon dioxide (SiO2) and silicon nitride (Si3N4) were deposited on 4H-SiC epitaxial layers using plasma enhanced chemical vapor deposition (PECVD) on 20 μm thick n-type 4H-SiC epitaxial layers followed by the fabrication of large area (~12 mm2) Schottky barrier radiation detectors. The fabricated detectors have been characterized through current-voltage (I-V), capacitance-voltage (C-V), and alpha pulse height spectroscopy measurements; the results were compared with that of detectors fabricated without surface passivations. Improved energy resolution of ~ 0.4% for 5486 keV alpha particles was observed after passivation, and it was found that the performance of these detectors were limited by the presence of macroscopic and microscopic crystal defects affecting the charge transport properties adversely. Capacitance mode deep level transient studies (DLTS) revealed the presence of a titanium impurity related shallow level defects (Ec-0.19 eV), and two deep level defects identified as Z1/2 and Ci1 located at Ec-0.62 and ~ Ec-1.40 eV respectively.

CT-guided percutaneous fine-needle aspiration biopsy of the inferior vena cava wall: a posterior coaxial approach.

PubMed

Kos, Sebastian; Bilecen, Deniz; Baumhoer, Daniel; Guillaume, Nicolas; Jacob, Augustinus L

2010-02-01

A 72-year-old man was referred to our department with an incidentally diagnosed bronchogenic carcinoma of the right upper lobe. Positron emission tomography (PET) combined with computed tomography (PET-CT) revealed an unexpected hot spot in the ventral wall of the infrarenal segment of the inferior vena cava (IVC). Diagnostic biopsy of this lesion was performed under CT guidance with semiautomated 20G fine-needle aspiration (FNA) through a 19G coaxial needle. Cytology revealed few carcinoma cells, which led to the remarkable diagnosis of a distant metastasis to the IVC wall. Both the immediate postinterventional CT control and the further surveillance period of the patient were unremarkable; in particular, no signs of bleeding complications were detected. We conclude that coaxial FNA of an IVC wall lesion is technically feasible and may even help diagnose distant metastasis.

CT-Guided Percutaneous Fine-Needle Aspiration Biopsy of the Inferior Vena Cava Wall: A Posterior Coaxial Approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kos, Sebastian, E-mail: skos@gmx.de; Bilecen, Deniz; Baumhoer, Daniel

A 72-year-old man was referred to our department with an incidentally diagnosed bronchogenic carcinoma of the right upper lobe. Positron emission tomography (PET) combined with computed tomography (PET-CT) revealed an unexpected hot spot in the ventral wall of the infrarenal segment of the inferior vena cava (IVC). Diagnostic biopsy of this lesion was performed under CT guidance with semiautomated 20G fine-needle aspiration (FNA) through a 19G coaxial needle. Cytology revealed few carcinoma cells, which led to the remarkable diagnosis of a distant metastasis to the IVC wall. Both the immediate postinterventional CT control and the further surveillance period of themore » patient were unremarkable; in particular, no signs of bleeding complications were detected. We conclude that coaxial FNA of an IVC wall lesion is technically feasible and may even help diagnose distant metastasis.« less

Twin-mediated epitaxial growth of highly lattice-mismatched Cu/Ag core-shell nanowires.

PubMed

Weng, Wei-Lun; Hsu, Chin-Yu; Lee, Jheng-Syun; Fan, Hsin-Hsin; Liao, Chien-Neng

2018-05-31

Lattice-mismatch is an important factor for the heteroepitaxial growth of core-shell nanostructures. A large lattice-mismatch usually leads to a non-coherent interface or a polycrystalline shell layer. In this study, a conformal Ag layer is coated on Cu nanowires with dense nanoscale twin boundaries through a galvanic replacement reaction. Despite a large lattice mismatch between Ag and Cu (∼12.6%), the Ag shell replicates the twinning structure in Cu nanowires and grows epitaxially on the nanotwinned Cu nanowire. A twin-mediated growth mechanism is proposed to explain the epitaxy of high lattice-mismatch bimetallic systems in which the misfit dislocations are accommodated by coherent twin boundaries.

Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

NASA Astrophysics Data System (ADS)

Usikov, Alexander; Soukhoveev, Vitali; Kovalenkov, Oleg; Syrkin, Alexander; Shapovalov, Liza; Volkova, Anna; Ivantsov, Vladimir

2013-08-01

We report on accumulation of background Si and O impurities measured by secondary ion mass spectrometry (SIMS) at the sub-interfaces in undoped, Zn- and Mg-doped multi-layer GaN structures grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates with growth interruptions. The impurities accumulation is attributed to reaction of ammonia with the rector quartz ware during the growth interruptions. Because of this effect, HVPE-grown GaN layers had excessive Si and O concentration on the surface that may hamper forming of ohmic contacts especially in the case of p-type layers and may complicate homo-epitaxial growth of a device structure.

Phase transition and epitaxies between hydrated orthorhombic and anhydrous monoclinic uric acid crystals

NASA Astrophysics Data System (ADS)

Boistelle, R.; Rinaudo, C.

1981-05-01

Anhydrous monoclinic and hydrated orthorhombic uric acid crystals can be nucleated and grown from pure water solutions either separately or together with epitaxial relationships. When crystals of one modification exist in the solution they can act as nucleation substrate for the crystals of the other modification. In both cases the new phase grows epitaxially on the substrate; the mutual orientations are the same but the contact planes are different. In addition, the anhydrous modification grows into the hydrated one which undergoes a phase transition by a dissolution-recrystallization process. It is likely that the same processes occur in human stones made up of uric acids.

Possible ferroelectricity in perovskite oxynitride SrTaO2N epitaxial thin films

PubMed Central

Oka, Daichi; Hirose, Yasushi; Kamisaka, Hideyuki; Fukumura, Tomoteru; Sasa, Kimikazu; Ishii, Satoshi; Matsuzaki, Hiroyuki; Sato, Yukio; Ikuhara, Yuichi; Hasegawa, Tetsuya

2014-01-01

Compressively strained SrTaO2N thin films were epitaxially grown on SrTiO3 substrates using nitrogen plasma-assisted pulsed laser deposition. Piezoresponse force microscopy measurements revealed small domains (101–102 nm) that exhibited classical ferroelectricity, a behaviour not previously observed in perovskite oxynitrides. The surrounding matrix region exhibited relaxor ferroelectric-like behaviour, with remanent polarisation invoked by domain poling. First-principles calculations suggested that the small domains and the surrounding matrix had trans-type and a cis-type anion arrangements, respectively. These experiments demonstrate the promise of tailoring the functionality of perovskite oxynitrides by modifying the anion arrangements by using epitaxial strain.

Molecular-beam epitaxy of 7-8 μm range quantum-cascade laser heterostructures

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Denisov, D. V.; Filimonov, A. V.; Nevedomsky, V. N.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Sokolovskii, G. S.; Novikov, I. I.; Bousseksou, A.; Egorov, A. Yu

2017-11-01

The method of molecular beam epitaxy demonstrates the possibility to create high quality heterostructures of quantum cascade lasers in a spectral range of 7-8 μm containing 50 quantum cascades in an active region. Design based on the principle of two-phonon resonant scattering is used. X-ray diffraction and transmission electron microscopy experiments confirm high structural properties of the created heterostructures, e.g. the identity of the composition and thickness of epitaxial layers in all 50 cascades. Edge-emitting lasers based on the grown heterostructure demonstrate lasing with threshold current density of 2.8 kA/cm2 at a temperature of 78 K.

Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, C.; Li, J.; Song, X. B.

2016-01-04

Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxial graphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphene transistor shows improved DC and RF performances including a maximum current density I{sub ds} of 4.2 A/mm, and a peak transconductance g{sub m} of 2880 mS/mm. Intrinsic current-gain cutoff frequency f{sub T} of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standingmore » bilayer epitaxial graphene transistor show the great application potential of this material system.« less

Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)

NASA Astrophysics Data System (ADS)

Lim, Z. H.; Ahmadi-Majlan, K.; Grimley, E. D.; Du, Y.; Bowden, M.; Moghadam, R.; LeBeau, J. M.; Chambers, S. A.; Ngai, J. H.

2017-08-01

We present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 °C in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.66 eV, respectively. Capacitance-voltage and current-voltage measurements on 4 nm thick films reveal low leakage current densities and an unpinned Fermi level at the interface that allows modulation of the surface potential of Ge. Ultra-thin films of epitaxial SrZrO3 can thus be explored as a potential gate dielectric for Ge.

The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

NASA Astrophysics Data System (ADS)

Zhilyaev, Yu. V.; Zelenin, V. V.; Orlova, T. A.; Panteleev, V. N.; Poletaev, N. K.; Rodin, S. N.; Snytkina, S. A.

2015-05-01

We have studied epitaxial layers of gallium nitride (GaN) in a template composition grown by surfactant-mediated hydride-chloride vapor phase epitaxy. The surfactant component was provided by 5 mass % additives of antimony and indium to the source of gallium. Comparative analysis of the obtained results shows evidence of the positive influence of surfactants on the morphology of epitaxial GaN layers.

Superconductivity and tunneling-junctions in epitaxial Nb2N/AlN/GaN heterojunctions

NASA Astrophysics Data System (ADS)

Yan, Rusen; Han, Yimo; Khalsa, Guru; Vishwanath, Suresh; Katzer, Scott; Nepal, Neeraj; Downey, Brian; Muller, David; Meyer, David; Xing, Grace; Jena, Debdeep; ECE Collaboration; AEP Collaboration; MSE Collaboration; NRL Collaboration

We have discovered that ultrathin highly crystalline Nb2N layers grown epitaxially (by MBE) on SiC and integrated with AlN and GaN heterostructures are high-quality superconductors with transition temperatures from 9-13 K. The out-of-plane critical magnetic fields are found to be 14 Tesla range, and the critical current density is 4*1E5 A/cm2 at 5 K. Preliminary in-plane magnetotransport measurements on 4 nm thin films indicate a significantly high critical magnetic field exceeding 40 T. Since Nb2N superconducting layers can be epitaxially integrated with GaN, AlN, and AlGaN, we also demonstrate Nb2N superconductivity in a layer located beneath an N-polar GaN high-electron-mobility transistor (HEMT) heterostructure that uses a 2DEG channel as a microwave amplifier; such a demonstration illustrates the potential emergence of a new paradigm where an all-epitaxial III-N/Nb2N platform could serve as the basis for microwave qubits to power quantum computation as well as quantum communications.

The stability of the epitaxially introduced metastable metallic structures of thin layers and multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cadeville, M.C.

Among the very large number of metallic thin films, sandwiches and multilayers which have been elaborated by epitaxy on various single crystalline substrates during the last decade, few new structures are reported. Limiting to the case of 3d metals, one finds with a great confidence bcc Cobalt, possibly bee Nickel and a non-compact hexagonal (hp) iron. Moreover structures existing at high temperature under ambient pressure are epitaxially stabilized at room temperature (RT) like fcc Cobalt, fcc Iron, fcc and bcc Manganese. The hcp iron which is stable under high pressure at RT would not be epitaxially stabilized at ambient pressuremore » conversely to first findings. The critical thickness of the metastable phase is generally limited to some monolayers in thin films, being slightly increased in sandwiches or multilayers, even if the phenomenological wetting criterion to build superlattices is not satisfied. No increased magnetic moment has been found up to now in the expanded lattices, contrary to band structure calculation predictions. 56 refs.« less

Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

NASA Astrophysics Data System (ADS)

Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schleicher, B., E-mail: b.schleicher@ifw-dresden.de; Niemann, R.; Schultz, L.

2015-08-07

Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg{sub 1/3}Nb{sub 2/3}){sub 0.72}Ti{sub 0.28}O{sub 3} substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth andmore » martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.« less

A Near-Wall Reynolds-Stress Closure without Wall Normals

NASA Technical Reports Server (NTRS)

Yuan, S. P.; So, R. M. C.

1997-01-01

With the aid of near-wall asymptotic analysis and results of direct numerical simulation, a new near-wall Reynolds stress model (NNWRS) is formulated based on the SSG high-Reynolds-stress model with wall-independent near-wall corrections. Only one damping function is used for flows with a wide range of Reynolds numbers to ensure that the near-wall modifications diminish away from the walls. The model is able to reproduce complicated flow phenomena induced by complex geometry, such as flow recirculation, reattachment and boundary-layer redevelopment in backward-facing step flow and secondary flow in three-dimensional square duct flow. In simple flows, including fully developed channel/pipe flow, Couette flow and boundary-layer flow, the wall effects are dominant, and the NNWRS model predicts less degree of turbulent anisotropy in the near-wall region compared with a wall-dependent near-wall Reynolds Stress model (NWRS) developed by So and colleagues. The comparison of the predictions given by the two models rectifies the misconception that the overshooting of skin friction coefficient in backward-facing step flow prevalent in those near-wall, models with wall normal is caused by he use of wall normal.

Geologic map of the Gila Hot Springs 7.5' quadrangle and the Cliff Dwellings National Monument, Catron and Grant Counties, New Mexico

USGS Publications Warehouse

Ratté, James C.; Gaskill, David L.; Chappell, James R.

2014-01-01

The Gila Hot Springs quadrangle is of geologic interest with respect to four major features, which are: 1)\tThe caves of the Gila Cliff Dwellings National Monument 2)\tThe hot springs associated with the faults of the Gila Hot Springs graben 3)\tThe Alum Mountain rhyolite dome and eruptive center 4)\tA proposed segment of the southeastern wall of the Gila Cliff Dwellings caldera The Gila Cliff Dwellings National Monument consists of two tracts. The caves that were inhabited by the Mogollon people in the 14th century are in the main tract near the mouth of Cliff Dweller Canyon in the Little Turkey Park 7.5' quadrangle adjoining the northwest corner of the Gila Hot Springs quadrangle. The second tract includes the Cliff Dwellings National Monument Visitor Center at the confluence of the West and Middle Forks of the Gila River in the northwest corner of the Gila Hot Springs quadrangle. Both quadrangles are within the Gila National Forest and the Gila Wilderness except for a narrow corridor that provides access to the National Monument and the small ranching and residential community at Gila Center in the Gila River valley. The caves in Cliff Dweller Canyon were developed in the Gila Conglomerate of probable Miocene? and Pleistocene? age in this area by processes of lateral corrosion and spring sapping along the creek in Cliff Dweller Canyon. The hot springs in the Gila River valley are localized along faults in the deepest part of the Gila Hot Springs graben, which cuts diagonally northwest-southeast across the central part of the quadrangle. Some of the springs provide domestic hot water for space heating and agriculture in the Gila River valley and represent a possible thermal resource for development at the Cliff Dwellings National Monument. The Alum Mountain rhyolite dome and eruptive center in the southwestern part of the quadrangle is a colorful area of altered and mineralized rocks that is satellitic to the larger Copperas Canyon eruptive center, both being