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Sample records for hot wall epitaxial

  1. Hot Wall Epitaxy And Characterization Of Bismuth And Antimony Thin Films On Barium Fluoride Substrates

    NASA Astrophysics Data System (ADS)

    Collazo, Ramon; Dalmau, Rafael; Martinez, Antonio

    1998-03-01

    We have grown thin films of bismuth and antimony using hot wall epitaxy. The epitaxial films were grown on (111)-BaF2 substrates. The chemical integrity of the films was established using Auger electron spectroscopy and X ray Photoelectron Spectroscopy. The thickness of the films was measured using an atomic force microscope to establish their growth rate. The crystallographic properties of the films were assessed using x-ray diffraction techniques. Both bismuth and antimony thin films were found to be oriented with the [003] direction perpendicular to the plane of the films. Pole figures of both types of films indicate the epitaxial nature of the films. Bi/Sb multilayer structures were grown using the same growth technique. We will report on the results of the characterization of these films as well as on the growth apparatus and process. Work supported in part by EPSCoR-NSF Grant EHR-9108775 and NCRADA-NSWCDD-92-01.

  2. Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor

    NASA Astrophysics Data System (ADS)

    Baker, Troy; Mayo, Ashley; Veisi, Zeinab; Lu, Peng; Schmitt, Jason

    2014-10-01

    Aluminum nitride (AlN) was grown on c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor. The surface morphology, crystal quality, and growth rate were investigated as a function of growth temperature in the range of 1450-1575 °C. AlN templates grown to a thickness of 1 μm were optimized with double axis X-ray diffraction (XRD) rocking curve full width half maximums (FWHMs) of 135″ for the (002) and 513″ for the (102).

  3. High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

    NASA Astrophysics Data System (ADS)

    Chowdhury, Iftekhar; Chandrasekhar, M. V. S.; Klein, Paul B.; Caldwell, Joshua D.; Sudarshan, Tangali

    2011-02-01

    Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0 0 0 1) 8° off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl 2, which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 μm/h, 5-15 times higher than most conventional growths. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations <1×10 14 cm -3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (μPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 μs.

  4. Structural properties of CdTe-ZnTe strained-layer superlattice grown on GaAs by hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Sugiyama, I.; Hobbs, A.; Ueda, O.; Shinohara, K.; Takigawa, H.

    1991-06-01

    CdTe-ZnTe strained-layer superlattices (SLSs) were grown on GaAs by hot-wall epitaxy. The individual layer thickness of the SLS is well controlled and the thickness fluctuation is less than ±1 monolayer. High-resolution transmission electron microscopy images show coherent SLS growth. We found that two-thirds of the threading dislocations can be reduced by inserting the SLS in CdTe/GaAs.

  5. PbSnTe double-heterostructure lasers and PbEuTe double-heterostructure lasers by hot-wall epitaxy

    SciTech Connect

    Nishijima, Y.

    1989-02-01

    Pb/sub 1-//sub x/ Sn/sub x/ Te, double-heterostructure (DH) lasers and Pb/sub 1-//sub x/ Eu/sub x/ Te DH lasers produced by hot-wall epitaxy have been studied. The growth temperature for both laser crystals is 300 /sup 0/C. This is lower than the growth temperatures obtainable by molecular-beam epitaxy and liquid phase epitaxy. By investigating the I-V characteristics of Pb/sub 1-//sub x/ Sn/sub x/ Te DH lasers with x values greater than 0.2, it was confirmed that the band structure of the p-n heterojunction is type 1'. A Pb/sub 1-//sub x/ Sn/sub x/ Te/sub 1-//sub y/ Se/sub y/ layer, rather than a PbTe/sub 1-//sub y/ Se/sub y/ layer, should be used for the cladding layer of Pb/sub 1-//sub x/ Sn/sub x/ Te DH lasers with x values greater than 0.2. One of the primary factors preventing an increase in the maximum operating temperature to 200 K is that the carrier density injected into the active layer is not sufficient for laser emissions over 200 K due to the p-n heterojunction of the type 1' band structure. The band structure of the p-n heterojunction of Pb/sub 1-//sub x/ Eu/sub x/ Te DH lasers is type 1. Therefore, the maximum operating temperatures of the Pb/sub 1-//sub x/ Eu/sub x/ Te DH lasers are expected to be greater than those of Pb/sub 1-//sub x/ Sn/sub x/ Te DH lasers. The maximum operating temperature of Pb/sub 1-//sub x/ Eu/sub x/ Te DH lasers exceeded 200 K. The maximum operating temperature of the laser with a PbTe active layer was 170 K under CW operation and 243 K under pulsed operation.

  6. In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

    NASA Astrophysics Data System (ADS)

    Takagaki, Y.; Jenichen, B.; Jahn, U.; Ramsteiner, M.; Biermann, K.

    2013-11-01

    We demonstrate the production of In2Se3 films as the growth outcome when Bi2Se3 films are deposited using the hot-wall-epitaxy method on the substrates that contain In. The Bi atoms in Bi2Se3 are substituted with the In atoms supplied from the InAs substrates. Despite a large lattice mismatch, α-In2Se3 layers grow semicoherently on InAs(1 1 1). The substitution is induced on the InP substrates only when the substrate surface is roughened. The phase of the resultant In2Se3 depends on the degree of the surface roughness. When the roughness is not strong, layered structures of α-In2Se3 are produced by semicoherent heteroepitaxy not only on (1 1 1) but also on high-index surfaces. On heavily damaged InP substrates, the layers primarily consist of γ-In2Se3. We show, in addition, that the In-induced substitution causes the incorporation of Ga atoms in the In-Se compounds on (In,Ga)As surfaces.

  7. Element substitution from substrates in Bi2Se3, Bi2Te3 and Sb2Te3 overlayers deposited by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Takagaki, Y.; Jahn, U.; Jenichen, B.; Berlin, K.; Kong, X.; Biermann, K.

    2014-09-01

    In depositing Bi2Se3, Bi2Te3 or Sb2Te3 layers on certain substrates by hot wall epitaxy, the Bi and Sb atoms in the layers are replaced by the atoms supplied from the substrates. We extend our exploration on this substitution phenomenon for a number of combinations of the layer and the substrate to infer the factors that determine the occurrence of the substitution. Using a series of Ga- and In-based III-V substrates, it is evidenced that the group III atoms substitute the group V overlayer atoms when the bonds in the substrates are weak. We demonstrate that Ag triggers the substitution more effectively than Cu as a catalyst. The competition between the catalyst-induced substitutions on ternary alloy substrates shows that the dependence on the bond strength is not as strong as to be exclusive. Additionally, defectiveness around the interface between a semicoherently grown α-In2Se3 layer produced by the substitution and the InAs substrate is demonstrated. The cathodeluminescence properties are also provided focusing on the dependence on the phase of In2Se3.

  8. Lateral Growth Expansion of 4H/6H-SiC m-plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Powell, J. A.; Spry, David J.; Raghothamachar, Balaji; Dudley, Michael

    2011-01-01

    Lateral expansion of small mixed polytype 4H/6H-SiC slivers were realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented ..11..00.. SiC boule slices containing regions of 4H and 6H SiC were exposed to HWCVD conditions using standard silane/propane chemistry for a period of up to eight hours. The slivers exhibited approximately 1500 microns (1.5 mm) of total lateral expansion. Initial analysis by synchrotron white beam x-ray topography (SWBXT) confirms, that the lateral growth was homoepitaxial, matching the polytype of the respective underlying region of the seed sliver.

  9. Study of Defect Structures in 6H-SiC a/ m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

    NASA Astrophysics Data System (ADS)

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2016-04-01

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/ m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed-epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g· b and g· b× l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed-homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Finally, the implication of these results for improving the LTC growth process is addressed.

  10. Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

    2014-01-01

    The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

  11. Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Huang, J.; Alexander-Webber, J. A.; Janssen, T. J. B. M.; Tzalenchuk, A.; Yager, T.; Lara-Avila, S.; Kubatkin, S.; Myers-Ward, R. L.; Wheeler, V. D.; Gaskill, D. K.; Nicholas, R. J.

    2015-04-01

    Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of T4 at carrier temperatures from 1.4 K up to ˜100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence n_e-1.5 in the scaling of the T4 power law is observed in bilayer graphene, in contrast to the n_e-0.5 dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems.

  12. 15. View of interior, north wall of hot cell featuring ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. View of interior, north wall of hot cell featuring radioactive materials containment box, facing east - Nevada Test Site, Reactor Maintenance & Disassembly Complex, Junior Hot Cell, Jackass Flats, Area 25, South of intersection of Roads F & G, Mercury, Nye County, NV

  13. 47. ARAI. Interior view of operating wall of hot cell ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    47. ARA-I. Interior view of operating wall of hot cell in ARA-626. Note stands for operators at viewing windows. Manipulators with hand grips extend cables and other controls into hot cell through ducts above windows. Ineel photo no. 81-27. - Idaho National Engineering Laboratory, Army Reactors Experimental Area, Scoville, Butte County, ID

  14. Experimental investigation of interaction processes between droplets and hot walls

    NASA Astrophysics Data System (ADS)

    Karl, A.; Frohn, A.

    2000-04-01

    A detailed experimental investigation of interaction processes of small liquid droplets with hot walls well above the Leidenfrost temperature has been carried out. The experimental method which uses monodisperse droplet streams in combination with a standard video camera allows very detailed observations and measurements with very high time resolution. The main intent of this paper is to study the mechanical behavior of liquid droplets impacting on hot walls well above the Leidenfrost temperature. A better understanding of this process may lead to a better modeling of two-phase flows, especially for applications in fuel preparation processes, combustion processes, and spray cooling. The loss of momentum of the droplets, the droplet deformation, and the onset of droplet disintegration have been investigated. For all experimental results correlations have been developed, which can be used to improve the numerical modeling of two-phase flows. Using the correlation for the loss of momentum a theoretical approximation for the maximum droplet deformation has been deduced, which yields a very good agreement with our own measurements as well as with results reported in the literature. A minimum impinging angle for droplet disintegration has been discovered for small impinging angles. Below this impinging angle no droplet disintegration is observed. This phenomenon is directly related to the energy dissipation at the wall during the interaction process. With the presented work the understanding of basic interaction processes between droplets and hot walls may be improved.

  15. Stress analysis for wall structure in mobile hot cell design

    NASA Astrophysics Data System (ADS)

    Bahrin, Muhammad Hannan; Rahman, Anwar Abdul; Hamzah, Mohd Arif; Mamat, Mohd Rizal; Azman, Azraf; Hasan, Hasni

    2016-01-01

    Malaysian Nuclear Agency is developing a Mobile Hot Cell (MHC) in order to handle and manage Spent High Activity Radioactive Sources (SHARS) such as teletherapy heads and irradiators. At present, there are only two units of MHC in the world, in South Africa and China. Malaysian Mobile Hot cell is developed by Malaysian Nuclear Agency with the assistance of IAEA expert, based on the design of South Africa and China, but with improved features. Stress analysis has been performed on the design in order to fulfil the safety requirement in operation of MHC. This paper discusses the loading analysis effect from the sand to the MHC wall structure.

  16. Epitaxial Engineering of Domain Walls and Distortions in Ferrite Heterostructures

    NASA Astrophysics Data System (ADS)

    Mundy, Julia

    The defining feature of ferroics is the ability of an external stimulus--electric field, magnetic field, or stress--to move domain walls. These topological defects and their motion enables many useful attributes, e.g., memories that can be reversibly written between stable states as well as enhanced conductivity, permittivity, permeability, and piezoelectricity. Although methods are known to drastically increase their density, the placement of domain walls with atomic precision has until now evaded control. Here we engineer the location of domain walls with monolayer precision and exploit this ability to create a novel multiferroic in which ferroelectricity enhances magnetism at all relevant length scales. Starting with hexagonal LuFeO3, a geometric ferroelectric with the greatest known planar rumpling, we introduce individual extra monolayers of FeO during growth to construct formula-unit-thick syntactic layers of ferrimagnetic LuFe2O4 within the LuFeO3 matrix, i.e., (LuFeO3)m /(LuFe2O4)1 superlattices. The severe rumpling imposed by the neighboring LuFeO3 drives the ferrimagnetic LuFe2O4 into a simultaneously ferroelectric state and reduces the LuFe2O4 spin frustration. This increases the magnetic transition temperature significantly--to 281 K for the (LuFeO3)9 /(LuFe2O4)1 superlattice. Moreover, LuFeO3 can form charged ferroelectric domain walls, which we align to the LuFe2O4 bilayers with monolayer precision. Charge transfers to these domain walls to alleviate the otherwise electrostatically unstable polarization arrangement, further boosting the magnetic moment. Our results demonstrate the utility of combining ferroics at the atomic-layer level with attention to domain walls, geometric frustration and polarization doping to create multiferroics by design.

  17. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide.

    PubMed

    Farokhipoor, S; Magén, C; Venkatesan, S; Íñiguez, J; Daumont, C J M; Rubi, D; Snoeck, E; Mostovoy, M; de Graaf, C; Müller, A; Döblinger, M; Scheu, C; Noheda, B

    2014-11-20

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  18. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

    NASA Astrophysics Data System (ADS)

    Farokhipoor, S.; Magén, C.; Venkatesan, S.; Íñiguez, J.; Daumont, C. J. M.; Rubi, D.; Snoeck, E.; Mostovoy, M.; de Graaf, C.; Müller, A.; Döblinger, M.; Scheu, C.; Noheda, B.

    2014-11-01

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  19. Growth of chromium carbide in a hot wall DLICVD reactor.

    PubMed

    Boisselier, G; Maury, F; Schuster, F

    2011-09-01

    Chromium carbide coatings were grown at 748 K in a hot wall CVD reactor fed by sublimation of bis(benzene)chromium, BBC (MOCVD) and by direct liquid injection using a BBC/toluene solution (DLICVD). The two types of coatings exhibit an amorphous structure and the same C content (22 at.%). DLICVD permits delivering higher mass flow rate of precursors and consequently the growth rate is 3 times higher and the thickness uniformity is better than using MOCVD. Chromium metal deposition has also been investigated by DLICVD in this hot wall reactor using BBC/toluene/additive as precursor. The purpose of the additive is to block carbide formation. Two additives have been studied: (i) hexachlorobenzene (C6Cl6) and (ii) thiophenol (C6H5SH). The ratio additive/BBC required for Cr metal deposition is a few percent. In this process, C6Cl6 is not decomposed and only traces of Cl (0.4 at.%) are found in the coatings. For a ratio C6Cl6/BBC > 27% the growth of any coating is blocked. The gas phase containing C6H5SH is more reactive since the onset of deposition occurs approximately 50 K before the temperature of the chlorinated compound. Furthermore, a sulfur contamination of 3 at.% has been analyzed in the coatings revealing a partial decomposition of the additive. The results are detailed and discussed in relation with previous works. PMID:22097571

  20. Telescopic hot double wall carbon nanotube for nanolithography

    NASA Astrophysics Data System (ADS)

    Popescu, Adrian; Woods, Lilia

    2010-03-01

    Two main challenges in improving the use of an atomic force microscope tip for nanolithography have been identified for all types of methods for surface modification. One challenge is achieving high spatial resolutions, which is directly related to the sharpness of the tip; the other one is the accurate control of the tip-surface distance, which affects the quality of the surface modification. A telescopic hot double wall carbon nanotube for nanolithography that improves the spatial resolution and successfully solves the problem of maintaining a constant tip-surface distance is proposed. The system consists of a finite length outer tube attached to an atomic force microscope cantilever, while the inner tube with length larger than the outer one is free. By studying the heat transfer in the double wall carbon nanotube/surface, it is found that the size of the thermal spot on the surface is mainly determined by the inner tube diameter indicating that high spatial resolution can be achieved if small diameter nanotubes are used. The interaction forces in the system are of van der Waals type and we show that the inner tube is located always at the same energetically favorable distance from the surface. Since the inner tube can move telescopically along the double wall carbon nanotube axis, the tip/surface distance is maintained constant due to the van der Waals interaction, which in turn eliminates the need of an active feedback loop.

  1. Determination of hot-wire position from a solid wall in an opaque channel

    NASA Astrophysics Data System (ADS)

    Tay, C. M. J.; Khoo, B. C.; Chew, Y. T.

    2012-08-01

    Hot-wire experiments sometimes require the position of the hot-wire probe with respect to a solid wall to be known, as is often the case with boundary layer flow measurements. However, optical access to determine the position of the wall visually may not always be available. The current paper describes a procedure to allow a hot wire to determine accurately the location of the solid wall with respect to any arbitrary reference position using the response of the hot wire when it approaches a solid wall under no flow conditions. An accurate probe-positioning system can then be used to position the probe with respect to this wall. The method is applied to both an aluminum wall and a Perspex wall, and both give consistent measurements with an accuracy of better than ±0.005 mm.

  2. Wall proximity corrections for hot-wire readings in turbulent flows

    NASA Technical Reports Server (NTRS)

    Hebbar, K. S.

    1980-01-01

    This note describes some details of recent (successful) attempts of wall proximity corrections for hot-wire measurements performed in a three-dimensional incompressible turbulent boundary layer. A simple and quite satisfactory method of estimating wall proximity effects on hot-wire readings is suggested.

  3. Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

    SciTech Connect

    Someya, T.; Ishida, Y.; Yoshida, R.; Iimori, T.; Yukawa, R.; Akikubo, K.; Yamamoto, Sh.; Yamamoto, S.; Kanai, T.; Itatani, J.; Komori, F.; Shin, S.; Matsuda, I.; Fukidome, H.; Funakubo, K.; Suemitsu, M.; Yamamoto, T.

    2014-04-21

    Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi–Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron–electron scattering, and the observed electronic temperature indicates cascade carrier multiplication.

  4. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

    NASA Astrophysics Data System (ADS)

    Noheda, Beatriz

    Progress in nanotechnology requires new paradigms for materials synthesis that allow controlling their functionality down to the smallest scales. Here we report a novel two-dimensional ferromagnetic phase that is synthesized at the domain walls (DWs) of the antiferromagnetic insulator TbMnO3 when grown in thin layers under epitaxial strain. This Mn oxide phase presents an atomic arrangement that does not exist in bulk and cannot be synthesized by standard chemical routes. The number of 2D ferromagnetic sheets can be controlled by tuning the thickness of the thin films, giving rise to volume fractions that go up to 25% of the total film volume. Such novel phases are driven by a unique environment induced by the symmetry breaking and large stresses present at domain walls, which function as nanoreactors. This new class of nanoscale materials may find innovative applications in nanoelectronics and spintronics. The work is published as S. Farokhipoor, C. Magén, S. Venkatesan, J. Íñiguez, C. J. M. Daumont, D. Rubi, E. Snoeck, M. Mostovoy, C. de Graaf, A. Müller, M. Döblinger, C. Scheu, B. Noheda, Nature 515, 379 (2014)

  5. High Performance Walls in Hot-Dry Climates

    SciTech Connect

    Hoeschele, M.; Springer, D.; Dakin, B.; German, A.

    2015-01-01

    High performance walls represent a high priority measure for moving the next generation of new homes to the Zero Net Energy performance level. The primary goal in improving wall thermal performance revolves around increasing the wall framing from 2x4 to 2x6, adding more cavity and exterior rigid insulation, achieving insulation installation criteria meeting ENERGY STAR's thermal bypass checklist, and reducing the amount of wood penetrating the wall cavity.

  6. A&M. TAN607. Shield wall sections and details around hot shop ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607. Shield wall sections and details around hot shop and special equipment room, showing taper, crane rail elevations, and elevation for biparting door (door no. 301) in wall between hot shop and special equipment room. Ralph M. Parsons 902-3-ANP-607-S 138. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-62-963-106782 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  7. HOT CELL BUILDING, TRA632. WHILE STEEL BEAMS DEFINE FUTURE WALLS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632. WHILE STEEL BEAMS DEFINE FUTURE WALLS OF THE BUILDING, SHEET STEEL DEFINES THE HOT CELL "BOX" ITSELF. THREE OPERATING WINDOWS ON LEFT; ONE VIEWING WINDOW ON RIGHT. TUBES WILL CONTAIN SERVICE AND CONTROL LEADS. SPACE BETWEEN INNER AND OUTER BOX WALLS WILL BE FILLED WITH SHIELDED WINDOWS AND BARETES CONCRETE. CAMERA FACES SOUTHEAST. INL NEGATIVE NO. 7933. Unknown Photographer, ca. 5/1953 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  8. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

    DOEpatents

    Iwancizko, Eugene; Jones, Kim M.; Crandall, Richard S.; Nelson, Brent P.; Mahan, Archie Harvin

    2001-01-01

    The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

  9. Response of hot element wall shear stress gages in laminar oscillating flows

    NASA Technical Reports Server (NTRS)

    Cook, W. J.; Murphy, J. D.; Giddings, T. A.

    1986-01-01

    An experimental investigation of the time-dependent response of hot element wall shear stress gages in unsteady periodic air flows is reported. The study has focused on wall shear stress in laminar oscillating flows produced on a flat plate by a free stream velocity composed of a mean component and a superposed sinusoidal variation. Two types of hot element gages, platinum film and flush wire, were tested for values of reduced frequency ranging from 0.14 to 2.36. Values of the phase angle of the wall shear stress variation relative to the free stream velocity, as indicated by the hot element gages, are compared with numerical prediction. The comparisons show that the gages indicate a wall shear stress variation that lags the true variation, and that the gages will also not indicate the correct wall shear stress variation in periodic turbulent flows.

  10. Response of hot element flush wall gauges in oscillating laminar flow

    NASA Technical Reports Server (NTRS)

    Giddings, T. A.; Cook, W. J.

    1986-01-01

    The time dependent response characteristics of flush-mounted hot element gauges used as instruments to measure wall shear stress in unsteady periodic air flows were investigated. The study was initiated because anomalous results were obtained from the gauges in oscillating turbulent flows for the phase relation of the wall shear stress variation, indicating possible gauge response problems. Flat plate laminar oscillating turbulent flows characterized by a mean free stream velocity with a superposed sinusoidal variation were performed. Laminar rather than turbulent flows were studied, because a numerical solution for the phase angle between the free stream velocity and the wall shear stress variation that is known to be correct can be obtained. The focus is on comparing the phase angle indicated by the hot element gauges with corresponding numerical prediction for the phase angle, since agreement would indicate that the hot element gauges faithfully follow the true wall shear stress variation.

  11. High Performance Walls in Hot-Dry Climates

    SciTech Connect

    Hoeschele, Marc; Springer, David; Dakin, Bill; German, Alea

    2015-01-01

    High performance walls represent a high priority measure for moving the next generation of new homes to the Zero Net Energy performance level. The primary goal in improving wall thermal performance revolves around increasing the wall framing from 2x4 to 2x6, adding more cavity and exterior rigid insulation, achieving insulation installation criteria meeting ENERGY STAR's thermal bypass checklist. To support this activity, in 2013 the Pacific Gas & Electric Company initiated a project with Davis Energy Group (lead for the Building America team, Alliance for Residential Building Innovation) to solicit builder involvement in California to participate in field demonstrations of high performance wall systems. Builders were given incentives and design support in exchange for providing site access for construction observation, cost information, and builder survey feedback. Information from the project was designed to feed into the 2016 Title 24 process, but also to serve as an initial mechanism to engage builders in more high performance construction strategies. This Building America project utilized information collected in the California project.

  12. 113. ARAI Hot cell (ARA626) Building wall sections and details ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    113. ARA-I Hot cell (ARA-626) Building wall sections and details of radio chemistry lab. Shows high-bay roof over hot cells and isolation rooms below grade storage pit for fuel elements. Norman Engineering Company: 961-area/SF-626-A-4. Date: January 1959. Ineel index code no. 068-0626-00-613-102724. - Idaho National Engineering Laboratory, Army Reactors Experimental Area, Scoville, Butte County, ID

  13. Evaluation of Tritium Behavior in the Epoxy Painted Concrete Wall of ITER Hot Cell

    SciTech Connect

    Nakamura, Hirofumi; Hayashi, Takumi; Kobayashi, Kazuhiro; Nishi, Masataka

    2005-07-15

    Tritium behavior released in the ITER hot cell has been investigated numerically using a combined analytical methods of a tritium transport analysis in the multi-layer wall (concrete and epoxy paint) with the one dimensional diffusion model and a tritium concentration analysis in the hot cell with the complete mixing model by the ventilation. As the results, it is revealed that tritium concentration decay and permeation issues are not serious problem in a viewpoint of safety, since it is expected that tritium concentration in the hot cell decrease rapidly within several days just after removing the tritium release source, and tritium permeation through the epoxy painted concrete wall will be negligible as long as the averaged realistic diffusion coefficient is ensured in the concrete wall. It is also revealed that the epoxy paint on the concrete wall prevents the tritium inventory increase in the concrete wall greatly (two orders of magnitudes), but still, the inventory in the wall is estimated to reach about 0.1 PBq for 20 years operation.

  14. Hot-electron transport and magnetic anisotropy in epitaxial spin valves

    NASA Astrophysics Data System (ADS)

    Heindl, E.; Vancea, J.; Woltersdorf, G.; Back, C. H.

    2007-09-01

    We report on ballistic electron magnetic microscopy studies at room temperature using an epitaxially grown Fe34Co66/Au/Fe34Co66 trilayer. Local hysteresis loops are obtained as a function of the in-plane magnetic field angle. In order to understand the underlying local magnetization behavior, the magnetic anisotropies were determined by ferromagnetic resonance. These results served as input for simulations of the hysteresis loops, which are compared to magneto-optic Kerr effect and ballistic electron magnetic microscopy data of the spin valve. In doing so, the relative magnetization configuration of the spin valve can be calculated as a function of the external magnetic field, and the magnetization behavior during the reversal can be explained. Since different magnetization configurations of the spin valve are available, epitaxial spin valves allow multimagnetocurrent values, when the magnetic field is applied along different directions.

  15. HOT CELL BUILDING, TRA632. ELEVATIONS. PUMICE BLOCK WALLS. BLOWER AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632. ELEVATIONS. PUMICE BLOCK WALLS. BLOWER AND FILTER LOFT PLATFORM AND LADDER ON EAST SIDE. IDAHO OPERATIONS OFFICE MTR-632-IDO-4, 11/1952. INL INDEX NO. 531-0632-00-396-110563, REV. 2. - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  16. ARCHITECTURAL WALL SECTIONS OF HOT PILOT PLANT (CPP640). INL DRAWING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    ARCHITECTURAL WALL SECTIONS OF HOT PILOT PLANT (CPP-640). INL DRAWING NUMBER 200-0640-00-279-111682. ALTERNATE ID NUMBER 8952-CPP-640-A-5. - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  17. Hot wire production of single-wall and multi-wall carbon nanotubes

    DOEpatents

    Dillon, Anne C.; Mahan, Archie H.; Alleman, Jeffrey L.

    2010-10-26

    Apparatus (210) for producing a multi-wall carbon nanotube (213) may comprise a process chamber (216), a furnace (217) operatively associated with the process chamber (216), and at least one filament (218) positioned within the process chamber (216). At least one power supply (220) operatively associated with the at least one filament (218) heats the at least one filament (218) to a process temperature. A gaseous carbon precursor material (214) operatively associated with the process chamber (216) provides carbon for forming the multi-wall carbon nanotube (213). A metal catalyst material (224) operatively associated with the process (216) catalyzes the formation of the multi-wall carbon nanotube (213).

  18. Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Storasta, L.; Bergman, J. P.; Son, N. T.; Janzén, E.

    2003-04-01

    We have studied intrinsic and impurity related defects in silicon carbide (SiC) epilayers grown with fast epitaxy using chemical vapor deposition in a vertical hot-wall reactor. Using capacitance transient techniques, we have detected low concentrations of electron traps (denoted as Z1/2, EH6/7 and titanium) and hole traps (denoted as HS1 and shallow boron) in the n-type 4H-SiC epilayers. The concentration of intrinsic defects (Z1/2, EH6/7, and HS1 centers) increases with increasing growth temperature. The incorporation of shallow boron (B) decreases at higher growth temperatures, whereas the titanium (Ti) concentration is not sensitive to the growth temperature. The concentration of shallow B and Ti increases with increasing C/Si ratio. The concentration of the EH6/7 and the HS1 centers however, decreases with increasing C/Si ratio. We have also tested graphite susceptors with TaC or SiC coating and observed that the purity of the susceptor material plays a critical role in reducing the background impurity incorporation. The correlation with the carrier lifetime of these epilayers indicates that the EH6/7 and the Z1/2 centers may be the lifetime limiting defects in the investigated epilayers.

  19. Hot film wall shear instrumentation for compressible boundary layer transition research

    NASA Technical Reports Server (NTRS)

    Schneider, Steven P.

    1992-01-01

    Experimental and analytical studies of hot film wall shear instrumentation were performed. A new hot film anemometer was developed and tested. The anemometer performance was not quite as good as that of commercial anemometers, but the cost was much less and testing flexibility was improved. The main focus of the project was a parametric study of the effect of sensor size and substrate material on the performance of hot film surface sensors. Both electronic and shock-induced flow experiments were performed to determine the sensitivity and frequency response of the sensors. The results are presented in Michael Moen's M.S. thesis, which is appended. A condensed form of the results was also submitted for publication.

  20. Convective response of a wall-mounted hot-film sensor in a shock tube

    NASA Technical Reports Server (NTRS)

    Roberts, A. S., Jr.; Ortgies, K. R.; Gartenberg, E.; Carraway, D. L.

    1990-01-01

    Shock tube experiments were performed in order to determine the response of a single hot-film element of a sensor array to transiently induced flow behind weak normal shock waves. The experiments attempt to isolate the response due only to the change in convective heat transfer at the hot-film surface mounted on the wall of the shock tube. The experiments are described, the results being correlated with transient boundary layer theory and compared with an independent set of experimental results. One of the findings indicates that the change in the air properties (temperature and pressure) precedes the air mass transport, causing an ambiguity in the sensor response to the development of the velocity boundary layer. Also, a transient, local heat transfer coefficient is formulated to be used as a forcing function in a hot-film instrument model and simulation which remains under investigation.

  1. Convective response of a wall-mounted hot-film sensor in a shock tube

    NASA Technical Reports Server (NTRS)

    Roberts, A. Sidney, Jr.; Ortgies, Kelly R.; Gartenberg, Ehud; Carraway, Debra L.

    1991-01-01

    Shock tube experiments were performed in order to determine the response of a single hot-film element of a sensor array to transiently induced flow behind weak normal shock waves. The experiments attempt to isolate the response due only to the change in convective heat transfer at the hot-film surface mounted on the wall of the shock tube. The experiments are described, the results being correlated with transient boundary layer theory and compared with an independent set of experimental results. One of the findings indicates that the change in the air properties (temperature and pressure) precedes the air mass transport, causing an ambiguity in the sensor response to the development of the velocity boundary layer. Also, a transient, local heat transfer coefficient is formulated to be used as a forcing function in an hot-film instrument model and simulation which remains under investigation.

  2. Amorphous/epitaxial superlattice for thermoelectric application

    NASA Astrophysics Data System (ADS)

    Ishida, Akihiro; Thao, Hoang Thi Xuan; Shibata, Mamoru; Nakashima, Seisuke; Tatsuoka, Hirokazu; Yamamoto, Hidenari; Kinoshita, Yohei; Ishikiriyama, Mamoru; Nakamura, Yoshiaki

    2016-08-01

    An amorphous/epitaxial superlattice system is proposed for application to thermoelectric devices, and the superlattice based on a PbGeTeS system was prepared by the alternate deposition of PbS and GeTe using a hot wall epitaxy technique. The structure was analyzed by high-resolution transmission electron microscopy (HRTEM) and X-ray analysis, and it was found that the superlattice consists of an epitaxial PbTe-based layer and a GeS-based amorphous layer by the reconstruction of the constituents. A reduction in thermal conductivity due to the amorphous/epitaxial system was confirmed by a 2ω method. Electrical and thermoelectric properties were measured for the samples.

  3. Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

    NASA Astrophysics Data System (ADS)

    Guoguo, Yan; Feng, Zhang; Yingxi, Niu; Fei, Yang; Xingfang, Liu; Lei, Wang; Wanshun, Zhao; Guosheng, Sun; Yiping, Zeng

    2016-06-01

    Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2‑SiH4‑C2H4‑HCl. The effect of the SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH4/H2 ratio and the influence mechanism of chlorine has been investigated. With the reactor pressure increasing from 40 to 100 Torr, the growth rate increased to 52 μm/hand then decreased to 47 μm/h, which is due to the joint effect of H2 and HCl etching as well as the formation of Si clusters at higher reactor pressure. The surface root mean square (RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h. The scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Project supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.

  4. Large structural, thin-wall castings made of metals subject to hot tearing, and their fabrication

    NASA Technical Reports Server (NTRS)

    Smashey, Russell W. (Inventor)

    2001-01-01

    An article, such as a gas turbine engine mixer, is made by providing a mold structure defining a thin-walled, hollow article, and a base metal that is subject to hot tear cracking when cast in a generally equiaxed polycrystalline form, such as Rene' 108 and Mar-M247. The article is fabricated by introducing the molten base metal into the mold structure, and directionally solidifying the base metal in the mold structure to form a directionally oriented structure. The directionally oriented structure may be formed of a single grain or oriented multiple grains.

  5. Strain Control of Domain-Wall Stability in Epitaxial BiFeO3 (110) Films

    NASA Astrophysics Data System (ADS)

    Cruz, M. P.; Chu, Y. H.; Zhang, J. X.; Yang, P. L.; Zavaliche, F.; He, Q.; Shafer, P.; Chen, L. Q.; Ramesh, R.

    2007-11-01

    We have studied the stability of domains and domain walls in multiferroic BiFeO3 thin films using a combination of piezoelectric force microscopy and phase-field simulations. We have discovered that a film-substrate misfit strain may result in a drastically different thermodynamic stability of two parallel domain walls with the same orientation. A fundamental understanding of the underlying physics, the stress distribution in a domain structure, leads to a novel approach to control the ferroelastic domain stability in the multiferroic BiFeO3 system.

  6. Flavin-based quasi-epitaxial organization on single walled carbon nanotubes: Separation, characterization and device integration

    NASA Astrophysics Data System (ADS)

    Abanulo, Darlington C.

    Canonically defined as one atomically thin sheet of graphite (i.e. graphene), rolled up in a tube at a specific vector designated by a pair of indices ( n,m), single walled carbon nanotubes (SWNTs) have generated much enthusiasm in the scientific community for their promise to revolutionize materials and their functionalities. Due to their exceptional electrical, optical, mechanical, chemical, thermal and electronic properties, SWNTs have already began and continue to be exploited in a number of new multi-faceted technologies in a broad range of applications. This thesis presents a working model for taking nanotubes from dispersions to devices. Utilizing comprehensive characterization and molecular simulations, we highlight the unique abilities of outfitting SWNTs with a seamless flavin sheath. The precise organization of flavin moieties on the nanotube lattice in forming a perfect helical coating around the nanotube led to the discovery of the first ever-reported quasi-epitaxial based separation scheme. We also present in this thesis the molecular origin for such selection, as well as other consequential ramifications such as enantioselection, superhelical formation and supramolecular assembly. Last but not least, the viability of FMN/SWNT integration in devices such as thin film transistors and other potential sensory applications is also discussed from a design standpoint.

  7. New chemical and magnetic structure at the domain walls of an epitaxial oxide

    NASA Astrophysics Data System (ADS)

    Farokhipoor, Saeedeh; Magen, C.; Venkatesan, S.; Iniguez, J.; Daumont, C. J. M.; Rubi, D.; Snoeck, E.; Mostovoy, M.; de Graaf, C.; Muller, A.; Doblinger, M.; Scheu, C.; Noheda, B.

    2015-03-01

    Domain walls (DWs) in multiferroic thin films are nanoscale regions presenting different properties compared to the adjacent domains. This distinct behavior originates from the broken crystal symmetry and intense strain gradients around the walls. Therefore, engineering and controlling the properties of DWs in different types of functional materials, in particular in complex oxides, can become a promising path to design and tailor novel nano-electronic and spintronic devices. In TbMnO3, an antiferromagnetic orthorhombic perovskite in bulk form, ferroelastic DWs can also be achieved in a very controlled way, with densities that increase inversely proportional to the film thickness, such that for the thinnest films, the volume fraction of DWs can become up to 25% of the total film volume. These DWs, display a net magnetic moment that originates in a unique chemical environment: a novel Mn coordination has been locally synthesized due to the local stress present at the DWs. We believe that this method can be applied more generally to obtain embedded 2D ferromagnetic sheets of interest in electronics and spintronics. S. Farokhipoor, et al., Nature (20.Nov.2014).

  8. Morphology Control of Hot-Wall MOCVD Selective Area Grown Hexagonal GaN Pyramids

    NASA Astrophysics Data System (ADS)

    Lundskog, Anders; Forsberg, Urban; Holtz, Per Olof; Janzen, Erik

    2012-11-01

    Morphological variations of gallium polar (0001)-oriented hexagonal GaN pyramids grown by hot wall metal organic chemical vapor deposition under various growth conditions are investigated. The stability of the semipolar {1 (1) over bar 02} and nonpolar {1 (1) over bar 00} facets is particularly discussed. The presence of the {1 (1) over bar 02} facets near the apex of the pyramid was found to be controllable by tuning the absolute flow rate of ammonia during the growth Vertical nonpolar {1 (1) over bar 00} facets appeared in gallium rich conditions, which automatically were created when the growth time was prolonged beyond pyramid completion. The result was attributed to a gallium passivation of the {1 (1) over bar 00} surface.

  9. Fibers comprised of epitaxially grown single-wall carbon nanotubes, and a method for added catalyst and continuous growth at the tip

    DOEpatents

    Kittrell, W. Carter; Wang, Yuhuang; Kim, Myung Jong; Hauge, Robert H.; Smalley, Richard E.; Marek leg, Irene Morin

    2010-06-01

    The present invention is directed to fibers of epitaxially grown single-wall carbon nanotubes (SWNTs) and methods of making same. Such methods generally comprise the steps of: (a) providing a spun SWNT fiber; (b) cutting the fiber substantially perpendicular to the fiber axis to yield a cut fiber; (c) etching the cut fiber at its end with a plasma to yield an etched cut fiber; (d) depositing metal catalyst on the etched cut fiber end to form a continuous SWNT fiber precursor; and (e) introducing feedstock gases under SWNT growth conditions to grow the continuous SWNT fiber precursor into a continuous SWNT fiber.

  10. Additive Manufacturing of IN100 Superalloy Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair: Process Development, Modeling, Microstructural Characterization, and Process Control

    NASA Astrophysics Data System (ADS)

    Acharya, Ranadip; Das, Suman

    2015-09-01

    This article describes additive manufacturing (AM) of IN100, a high gamma-prime nickel-based superalloy, through scanning laser epitaxy (SLE), aimed at the creation of thick deposits onto like-chemistry substrates for enabling repair of turbine engine hot-section components. SLE is a metal powder bed-based laser AM technology developed for nickel-base superalloys with equiaxed, directionally solidified, and single-crystal microstructural morphologies. Here, we combine process modeling, statistical design-of-experiments (DoE), and microstructural characterization to demonstrate fully metallurgically bonded, crack-free and dense deposits exceeding 1000 μm of SLE-processed IN100 powder onto IN100 cast substrates produced in a single pass. A combined thermal-fluid flow-solidification model of the SLE process compliments DoE-based process development. A customized quantitative metallography technique analyzes digital cross-sectional micrographs and extracts various microstructural parameters, enabling process model validation and process parameter optimization. Microindentation measurements show an increase in the hardness by 10 pct in the deposit region compared to the cast substrate due to microstructural refinement. The results illustrate one of the very few successes reported for the crack-free deposition of IN100, a notoriously "non-weldable" hot-section alloy, thus establishing the potential of SLE as an AM method suitable for hot-section component repair and for future new-make components in high gamma-prime containing crack-prone nickel-based superalloys.

  11. Gas temperature measurements inside a hot wall chemical vapor synthesis reactor

    NASA Astrophysics Data System (ADS)

    Notthoff, Christian; Schilling, Carolin; Winterer, Markus

    2012-11-01

    One key but complex parameter in the chemical vapor synthesis (CVS) of nanoparticles is the time temperature profile of the gas phase, which determines particle characteristics such as size (distribution), morphology, microstructure, crystal, and local structure. Relevant for the CVS process and for the corresponding particle characteristics is, however, not the T(t)-profile generated by an external energy source such as a hot wall or microwave reactor but the temperature of the gas carrying reactants and products (particles). Due to a complex feedback of the thermodynamic and chemical processes in the reaction volume with the external energy source, it is very difficult to predict the real gas phase temperature field from the externally applied T(t)-profile. Therefore, a measurement technique capable to determine the temperature distribution of the gas phase under process conditions is needed. In this contribution, we demonstrate with three proof of principle experiments the use of laser induced fluorescence thermometry to investigate the CVS process under realistic conditions.

  12. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    NASA Astrophysics Data System (ADS)

    Stern, E.; Cheng, G.; Guthrie, S.; Turner-Evans, D.; Broomfield, E.; Lei, B.; Li, C.; Zhang, D.; Zhou, C.; Reed, M. A.

    2006-06-01

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 °C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs.

  13. Modeling of epitaxial silicon carbide deposition

    NASA Astrophysics Data System (ADS)

    Veneroni, Alessandro; Omarini, Fabrizio; Moscatelli, Davide; Masi, Maurizio; Leone, Stefano; Mauceri, Marco; Pistone, Giuseppe; Abbondanza, Giuseppe

    2005-02-01

    The availability of reliable chemical kinetics data is still a key factor in designing epitaxial deposition reactors able to obtain electronic grade surface quality for SiC films. Here, a literature mechanism was considered for the gas phase while a new multi species surface one was introduced. That detailed mechanism was embedded in a series of reactor models of different complexity (1D-3D) to realize a multi hierarchy modeling approach. In the framework of horizontal hot wall reactor with multiwafer rotating susceptor, several process parameters were examined.

  14. Low-temperature growth of epitaxial (1 0 0) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor

    NASA Astrophysics Data System (ADS)

    Adam, T. N.; Bedell, S.; Reznicek, A.; Sadana, D. K.; Venkateshan, A.; Tsunoda, T.; Seino, T.; Nakatsuru, J.; Shinde, S. R.

    2010-11-01

    Epitaxial (1 0 0) silicon layers were grown at temperatures ranging from 500 to 800 °C in a commercial cold-wall type UHV/CVD reactor at pressures less than 7×10 -5 Torr. The substrates were 300 mm SIMOX SOI wafers and spectroscopic ellipsometry was used to assess growth rates and deposition uniformities. High-resolution atomic force microscopy (AFM) was employed to verify the atomic terrace configuration that resulted from epitaxial step-flow growth. Deposition from disilane exhibited a nearly perfect reaction limit for low temperatures and high precursor flow rates (partial pressures) with measured activation energies of ≈2.0 eV, while a linear dependence of growth rate on precursor gas flow was found for the massflow-controlled regime. A similar behavior was observed in the case of silane with substantially reduced deposition rates in the massflow-limited regime and nearly a factor of 2 reduced growth rates deep in the reaction limited regime. High growth rates of up to 50 μm/h and non-uniformities as low as 1 σ=1.45% were obtained in the massflow-limited deposition regime. Silicon layers as thin as 0.6 nm (4.5 atomic layers ) were deposited continuously as determined using a unique wet chemical etching technique as well as cross-sectional high-resolution transmission electron microscopy (HRTEM). In contrast, epitaxial silicon deposited in RPCVD at 10 Torr using disilane within the same temperature range showed imperfect reaction limitation. While activation energies similar to that of UHV/CVD were found, no partial pressure limitation could be observed. Furthermore, layers deposited using disilane in RPCVD exhibited a large number of defects that appeared to form randomly during growth. We attribute this effect to gas phase reactions that create precursor fragments and radicals—an effect that is negligible in UHV/CVD.

  15. Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint

    SciTech Connect

    Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L.

    2009-06-01

    We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures < 750..deg..C, demonstrate open-circuit voltages > 500 mV and efficiencies > 5%.

  16. Technology Solutions Case Study: High-Performance Walls in Hot-Dry Climates

    SciTech Connect

    2015-04-01

    In this project,the Alliance for Residential Building Innovation (ARBI) team worked with builders in California to implement wall assemblies meeting a U-value lower than 0.050 Btu/h-ft2-°F. ARBI and its project team members helped builders identify preferred wall designs that met the requirements of their architects, structural engineers, and purchasing agents and that were acceptable to their subcontractors. Construction methods were observed and documented and construction costs obtained from builders were used to inform cost estimates for a range of advanced wall system types and insulation types. Wall framing types of 2 × 6 (16- and 24-in. on center [o.c.]) and double stud were modeled in Building Energy Optimization (BEopt™) software with cavity insulation levels ranging from R-19 to R-33 (double stud) and exterior rigid insulation of R-4, R-6, and R-8.

  17. Dynamic analysis of moisture transport through walls and associated cooling loads in the hot/humid climate of Florianopolis, Brazil

    SciTech Connect

    Mendes, N.; Winkelmann, F.C.; Lamberts, R.; Philippi, P.C.; Da Cunha Neto, J.A.B.

    1996-04-01

    The authors describe the use of a dynamic model of combined heat and mass transfer to analyze the effects on cooling loads of transient moisture storage and transport through walls with porous building materials, under varying boundary conditions. The materials studied were brick, lime mortar and autoclaved cellular concrete. The physical properties of these materials, such as mass transport coefficients, thermal conductivity and specific heat, were taken to be functions of moisture content. The simulation results were compared to those obtained by pure conduction heat transfer without moisture effects. Also analyzed were the influence on cooling loads of high moisture content due to rain soaking of materials, and the influence of solar radiation on sunny and cloudy days. The weather used was a hot/humid summer period in Florianopolis (South Brazil). It is shown that neglecting moisture migration or assuming that the physical properties of wall materials do not depend on moisture content can result in large errors in sensible and latent heat transfer.

  18. EBSD analysis of tungsten-filament carburization during the hot-wire CVD of multi-walled carbon nanotubes.

    PubMed

    Oliphant, Clive J; Arendse, Christopher J; Camagu, Sigqibo T; Swart, Hendrik

    2014-02-01

    Filament condition during hot-wire chemical vapor deposition conditions of multi-walled carbon nanotubes is a major concern for a stable deposition process. We report on the novel application of electron backscatter diffraction to characterize the carburization of tungsten filaments. During the synthesis, the W-filaments transform to W2C and WC. W-carbide growth followed a parabolic behavior corresponding to the diffusion of C as the rate-determining step. The grain size of W, W2C, and WC increases with longer exposure time and increasing filament temperature. The grain size of the recrystallizing W-core and W2C phase grows from the perimeter inwardly and this phenomenon is enhanced at filament temperatures in excess of 1,400°C. Cracks appear at filament temperatures >1,600°C, accompanied by a reduction in the filament operational lifetime. The increase of the W2C and recrystallized W-core grain size from the perimeter inwardly is ascribed to a thermal gradient within the filament, which in turn influences the hardness measurements and crack formation. PMID:24423105

  19. Analysis of SiC Deposition Rate in a Tubular Hot-Wall Reactor with Polymeric Source Using the DoE Method

    NASA Astrophysics Data System (ADS)

    Jamali Keikha, A.; Fanaei Sheikholeslami, T.; Behzadmehr, A.

    2013-06-01

    Atmospheric-pressure chemical vapor deposition of silicon carbide in a tubular hot-wall reactor using a polymeric source was studied. A three-dimensional model of the reactor was solved numerically based on the finite-volume method. To achieve the best desired conditions, the effects of substrate temperature, mass fraction of polycarbosilane (-Si[CH3]2-), inlet velocity, and substrate location on the SiC deposition rate were considered. These effects were investigated to obtain the optimum conditions by using the design of experiments (DoE) method. Finally, several contours are presented to help designers find suitable reactor conditions for higher performance.

  20. Prototype solar heated hot water systems and double-walled heat exchangers: A collection of quarterly reports

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The plan schedule and status of multiple objectives to be achieved in the development, manufacture, installation, and maintenance of two solar heated hot water prototype systems and two heat exchangers are reported. A computer program developed to resolve problems and evaluate system performance is described.

  1. Epitaxial growth and photoluminescence of hexagonal CdS 1- xSe x alloy films

    NASA Astrophysics Data System (ADS)

    Grün, M.; Gerlach, H.; Breitkopf, Th.; Hetterich, M.; Reznitsky, A.; Kalt, H.; Klingshirn, C.

    1995-01-01

    CdSSe ternary alloy films were grown on GaAs(111) by hot-wall beam epitaxy. The hexagonal crystal phase is obtained. The composition varies from 0 to 40% selenium. Luminescence spectroscopy at low temperatures shows a dominant effect by alloy disorder. Localization of carriers, for example, is still observed at a pulsed optical excitation density of 6 mJ/cm 2. The overall quality of the CdSSe films is sufficient to use them as buffer layers for the growth of hexagonal superlattices.

  2. A Microstructure Evolution Model for the Processing of Single-Crystal Alloy CMSX-4 Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair (Part II)

    NASA Astrophysics Data System (ADS)

    Acharya, Ranadip; Bansal, Rohan; Gambone, Justin J.; Das, Suman

    2014-09-01

    Part I [Metall. Mater. Trans. B, 2014, DOI: 10.1007/s11663-014-0117-9] presented a comprehensive thermal, fluid flow, and solidification model that can predict the temperature distribution and flow characteristics for the processing of CMSX-4 alloy powder through scanning laser epitaxy (SLE). SLE is an additive manufacturing technology aimed at the creation of equiaxed, directionally solidified and single-crystal (SX) deposits of nickel-based superalloys using a fast-scanning laser beam. Part II here further explores the Marangoni convection-based model to predict the solidification microstructure as a function of the conditions at the trailing edge of the melt pool formed during the SLE process. Empirical values for several microstructural characteristics such as the primary dendrite arm spacing (PDAS), the columnar-to-equiaxed transition (CET) criterion and the oriented-to-misoriented transition (OMT) criterion are obtained. Optical microscopy provides visual information on the various microstructural characteristics of the deposited material such as melt depth, CET location, OMT location, PDAS, etc. A quantitative and consistent investigation of this complex set of characteristics is both challenging and unprecedented. A customized image-analysis technique based on active contouring is developed to automatically extract these data from experimental micrographs. Quantitative metallography verifies that even for the raster scan pattern in SLE and the corresponding line heat source assumption, the PDAS follows the growth relation w ~G -0.5 V -0.25 (w = PDAS, G = temperature gradient and V = solidification velocity) developed for marginal stability under constrained growth. Models for the CET and OMT are experimentally validated, thereby providing powerful predictive capabilities for controlling the microstructure of SX alloys processed through SLE.

  3. A Microstructure Evolution Model for the Processing of Single-Crystal Alloy CMSX-4 Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair (Part II)

    NASA Astrophysics Data System (ADS)

    Acharya, Ranadip; Bansal, Rohan; Gambone, Justin J.; Das, Suman

    2014-12-01

    Part I [Metall. Mater. Trans. B, 2014, DOI:10.1007/s11663-014-0117-9] presented a comprehensive thermal, fluid flow, and solidification model that can predict the temperature distribution and flow characteristics for the processing of CMSX-4 alloy powder through scanning laser epitaxy (SLE). SLE is an additive manufacturing technology aimed at the creation of equiaxed, directionally solidified and single-crystal (SX) deposits of nickel-based superalloys using a fast-scanning laser beam. Part II here further explores the Marangoni convection-based model to predict the solidification microstructure as a function of the conditions at the trailing edge of the melt pool formed during the SLE process. Empirical values for several microstructural characteristics such as the primary dendrite arm spacing (PDAS), the columnar-to-equiaxed transition (CET) criterion and the oriented-to-misoriented transition (OMT) criterion are obtained. Optical microscopy provides visual information on the various microstructural characteristics of the deposited material such as melt depth, CET location, OMT location, PDAS, etc. A quantitative and consistent investigation of this complex set of characteristics is both challenging and unprecedented. A customized image-analysis technique based on active contouring is developed to automatically extract these data from experimental micrographs. Quantitative metallography verifies that even for the raster scan pattern in SLE and the corresponding line heat source assumption, the PDAS follows the growth relation w ~ G -0.5 V -0.25 ( w = PDAS, G = temperature gradient and V = solidification velocity) developed for marginal stability under constrained growth. Models for the CET and OMT are experimentally validated, thereby providing powerful predictive capabilities for controlling the microstructure of SX alloys processed through SLE.

  4. Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

    NASA Astrophysics Data System (ADS)

    Lekhal, K.; Avit, G.; André, Y.; Trassoudaine, A.; Gil, E.; Varenne, C.; Bougerol, C.; Monier, G.; Castelluci, D.

    2012-10-01

    The hydride vapor phase epitaxy (HVPE) process exhibits unexpected properties when growing GaN semiconductor nanowires (NWs). With respect to the classical well-known methods such as metal organic vapor phase epitaxy and molecular beam epitaxy, this near-equilibrium process based on hot wall reactor technology enables the synthesis of nanowires with a constant cylinder shape over unusual length. Catalyst-assisted HVPE shows a record short time process (less than 20 min) coupled to very low precursor consumption. NWs are grown at a fast solidification rate (50 μm h-1), facilitated by the high decomposition frequency of the chloride molecules involved in the HVPE process as element III precursors. In this work growth temperature and V/III ratio were investigated to determine the growth mechanism which led to such long NWs. Analysis based on the Ni-Ga phase diagram and the growth kinetics of near-equilibrium HVPE is proposed.

  5. Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability.

    PubMed

    Lekhal, K; Avit, G; André, Y; Trassoudaine, A; Gil, E; Varenne, C; Bougerol, C; Monier, G; Castelluci, D

    2012-10-12

    The hydride vapor phase epitaxy (HVPE) process exhibits unexpected properties when growing GaN semiconductor nanowires (NWs). With respect to the classical well-known methods such as metal organic vapor phase epitaxy and molecular beam epitaxy, this near-equilibrium process based on hot wall reactor technology enables the synthesis of nanowires with a constant cylinder shape over unusual length. Catalyst-assisted HVPE shows a record short time process (less than 20 min) coupled to very low precursor consumption. NWs are grown at a fast solidification rate (50 μm h(-1)), facilitated by the high decomposition frequency of the chloride molecules involved in the HVPE process as element III precursors. In this work growth temperature and V/III ratio were investigated to determine the growth mechanism which led to such long NWs. Analysis based on the Ni-Ga phase diagram and the growth kinetics of near-equilibrium HVPE is proposed. PMID:22983695

  6. Epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

  7. EDITORIAL: Epitaxial graphene Epitaxial graphene

    NASA Astrophysics Data System (ADS)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

  8. Epitaxial jumps

    NASA Astrophysics Data System (ADS)

    Stura, Enrico A.; Charbonnier, Jean-Baptiste; Taussig, Michael J.

    1999-01-01

    By a combination of seeding and changing the growth medium new crystal forms may be obtained. The procedure is called an epitaxial jump. The seeds used in the seeding are from crystals of the same or related protein. For example, seeding followed by an increase in precipitant concentration has given higher diffracting crystals of the complex between tissue factor, factor VIIa and the inhibitor 5L15. For both an anti-steroid antibody fragment and human placental alkaline phosphatase a polymorph was obtained by changing a low molecular weight polyethylene glycol (PEG) with one of a higher molecular weight. In the first case, in one direction and in the latter case, in the other direction. A change of conformation could also have contributed to this. A DsbA mutant illustrates how such changes, result in a different packing from that for the wild-type. Seeding from crystals of wild-type protein yields crystals which appear to be morphologically different from both the wild-type and mutant crystal forms.

  9. Evolution of crystalline domain size and epitaxial orientation of CdTe/Si(111) quantum dots

    NASA Astrophysics Data System (ADS)

    Suela, J.; Ribeiro, I. R. B.; Ferreira, S. O.; Malachias, A.; Fontes, G. N.; Montoro, L. A.; Ramirez, A. J.

    2010-03-01

    We have investigated the crystalline configuration of CdTe quantum dots (QDs) grown on hydrogen passivated Si(111) substrates by hot wall epitaxy. Coplanar and grazing incidence diffraction were used for determination of dot strain state and the vertical and lateral dimensions of the crystalline domain. A change in aspect ratio was observed as a function of dot size. X-ray diffraction (XRD) results show that despite a mismatch of almost 20% the islands grow with a fairly good epitaxial orientation with respect to the Si(111) substrate. The dot mosaicity was also determined and was found to decrease with island size from 7° to about 4° for the samples studied, indicating an improvement in epitaxial quality even before the island coalescence. Careful observation of CdTe(22¯0) reflections in an azimuthal scan showed that an additional ensemble of islands is responsible for low-intensity peaks with a 30° symmetry besides the expected 60° symmetry. Transmission electron microscopy results have shown good accordance with atomic force microscopy and XRD and revealed the presence of an amorphous Tellurium rich oxide layer at the CdTe/Si interface, which could explain the fully unstrained QD state observed.

  10. In situ etch treatments of silicon carbide epitaxial layer for morphological quality improvement of the surfaces

    NASA Astrophysics Data System (ADS)

    de Angelis, S.; Perrone, D.; Scaltrito, L.; Ferrero, S.; Pirri, C. F.; Mauceri, M.; Leone, S.; Pistone, G.; Abbondanza, G.; Crippa, D.

    2006-07-01

    Different homo epitaxial 4H-SiC commercial wafers were undergone hydrogen etching process that was developed in the reaction chamber of a Hot Wall Chemical Vapor Deposition (HWCVD) reactor. We have studied the effects of physical desorption to point out the morphology and the structural changes of epitaxial surfaces.An optical microscopy inspection was made to trace out a map of defect areas before and after etching treatments. We have analysed the morphological evolution of the surface in every etching process step by means of marked area on the defect map. We also achieved some other important information, concerning structural and morphological changing, by performing Atomic Force Microscopy and Micro Raman spectroscopy analysis on the same defect marked area.The etched epilayers showed a significant reduction of defects density and a good surface morphology. On investigated samples we fabricated Schottky diodes, their electrical behaviour compared to the devices fabricated on not etched epitaxial layer highlights the surface quality improvement and the increasing of SBD working yield.

  11. A proposal for epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

  12. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

    NASA Astrophysics Data System (ADS)

    Kadashchuk, A.; Schols, S.; Heremans, P.; Skryshevski, Yu.; Piryatinski, Yu.; Beinik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    2009-02-01

    A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  13. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

    SciTech Connect

    Kadashchuk, A.; Schols, S.; Heremans, P.; Skryshevski, Yu.; Piryatinski, Yu.; Beinik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    2009-02-28

    A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  14. Epitaxial solar cells fabrication

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1975-01-01

    Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

  15. A Coupled Thermal, Fluid Flow, and Solidification Model for the Processing of Single-Crystal Alloy CMSX-4 Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair (Part I)

    NASA Astrophysics Data System (ADS)

    Acharya, Ranadip; Bansal, Rohan; Gambone, Justin J.; Das, Suman

    2014-12-01

    Scanning laser epitaxy (SLE) is a new laser-based additive manufacturing technology under development at the Georgia Institute of Technology. SLE is aimed at the creation of equiaxed, directionally solidified, and single-crystal deposits of nickel-based superalloys through the melting of alloy powders onto superalloy substrates using a fast scanning Nd:YAG laser beam. The fast galvanometer control movement of the laser (0.2 to 2 m/s) and high-resolution raster scanning (20 to 200 µm line spacing) enables superior thermal control over the solidification process and allows the production of porosity-free, crack-free deposits of more than 1000 µm thickness. Here, we present a combined thermal and fluid flow model of the SLE process applied to alloy CMSX-4 with temperature-dependent thermo-physical properties. With the scanning beam described as a moving line source, the instantaneous melt pool assumes a convex hull shape with distinct leading edge and trailing edge characteristics. Temperature gradients at the leading and trailing edges are of order 2 × 105 and 104 K/m, respectively. Detailed flow analysis provides insights on the flow characteristics of the powder incorporating into the melt pool, showing velocities of order 1 × 10-4 m/s. The Marangoni effect drives this velocity from 10 to 15 times higher depending on the operating parameters. Prediction of the solidification microstructure is based on conditions at the trailing edge of the melt pool. Time tracking of solidification history is incorporated into the model to couple the microstructure prediction model to the thermal-fluid flow model, and to predict the probability of the columnar-to-equiaxed transition. Qualitative agreement is obtained between simulation and experimental result.

  16. Atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Goodman, Colin H. L.; Pessa, Markus V.

    1986-08-01

    Atomic layer epitaxy (ALE) is not so much a new technique for the preparation of thin films as a novel modification to existing methods of vapor-phase epitaxy, whether physical [e.g., evaporation, at one limit molecular-beam epitaxy (MBE)] or chemical [e.g., chloride epitaxy or metalorganic chemical vapor deposition (MOCVD)]. It is a self-regulatory process which, in its simplest form, produces one complete molecular layer of a compound per operational cycle, with a greater thickness being obtained by repeated cycling. There is no growth rate in ALE as in other crystal growth processes. So far ALE has been applied to rather few materials, but, in principle, it could have a quite general application. It has been used to prepare single-crystal overlayers of CdTe, (Cd,Mn)Te, GaAs and AlAs, a number of polycrystalline films and highly efficient electroluminescent thin-film displays based on ZnS:Mn. It could also offer particular advantages for the preparation of ultrathin films of precisely controlled thickness in the nanometer range and thus may have a special value for growing low-dimensional structures.

  17. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  18. Hetero epitaxial graphene on various substrates

    NASA Astrophysics Data System (ADS)

    Harris, Gary; Kaut, Gurpreet; Taylor, Crawford

    2015-03-01

    Large-scale production of graphene is pivotal for the development of graphene-based electronics. These results focus on the synthesis and characterization of graphene layers. Two methods were used to grow graphene films. First, graphene films were epitaxially grown on silicon carbide substrates by thermal decomposition of SiC at high temperature and low pressure. In-house built reactor consisting of induction furnace was used to form epitaxial films for electronic applications. Second, chemical vapor deposition method was used for direct graphene synthesis on 3C-SiC with the use of copper as a catalyst. In thermal CVD process, hydrogen and methane gases were used as precursors. Methane acts as a carbon source and annealing and cooling were done hydrogen environment. Different polytypes of silicon carbide (6H-SiC and 3C-SiC) and their crystal orientations were exploited as substrates to form epitaxial graphene. Hetero epitaxial 3C-SiC epilayer was first deposited on Si substrate using chemical vapor deposition technique in cold wall, low pressure, and horizontal CVD reactor. The reactor temperature, argon pressure, flow rates and concentration of different gases (propane, silane, hydrogen and argon) was investigated to control the growth of 3C-SiC and silicon sublimation rate. The resulting graphene films were confirmed using Raman spectroscopy. Further, graphene films have been characterized with the tools of atomic force microscopy (AFM) and scanning electron microscopy (SEM). Mobility, electrical resistivity and carrier density measurements were taken using hall measurements. NSF_PRDM

  19. A&M. Hot cell annex (TAN633) interior under construction. Hot cells ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot cell annex (TAN-633) interior under construction. Hot cells and their doors are along concrete wall. Note side wall of pumice block. Photographer: Jack L. Anderson. Date: October 28, 1957. INEEL negative no. 57-5335 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  20. Commercial aspects of epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

  1. Soft epitaxy of nanocrystal superlattices

    NASA Astrophysics Data System (ADS)

    Rupich, Sara M.; Castro, Fernando C.; Irvine, William T. M.; Talapin, Dmitri V.

    2014-12-01

    Epitaxial heterostructures with precise registry between crystal layers play a key role in electronics and optoelectronics. In a close analogy, performance of nanocrystal (NC) based devices depends on the perfection of interfaces formed between NC layers. Here we systematically study the epitaxial growth of NC layers for the first time to enable the fabrication of coherent NC layers. NC epitaxy reveals an exceptional strain tolerance. It follows a universal island size scaling behaviour and shows a strain-driven transition from layer-by-layer to Stranski-Krastanov growth with non-trivial island height statistics. Kinetic bottlenecks play an important role in NC epitaxy, especially in the transition from sub-monolayer to multilayer coverage and the epitaxy of NCs with anisotropic shape. These findings provide a foundation for the rational design of epitaxial structures in a fundamentally and practically important size regime between atomic and microscopic systems.

  2. Vacancies in epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-08-15

    The coherent-potential method is used to consider the problem of the influence of a finite concentration of randomly arranged vacancies on the density of states of epitaxial graphene. To describe the density of states of the substrate, simple models (the Anderson model, Haldane-Anderson model, and parabolic model) are used. The electronic spectrum of free single-sheet graphene is considered in the low-energy approximation. Charge transfer in the graphene-substrate system is discussed. It is shown that, in all cases, the density of states of epitaxial graphene decreases proportionally to the vacancy concentration. At the same time, the average charge transferred from graphene to the substrate increases.

  3. Germanium epitaxy on silicon

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  4. Induced base transistor fabricated by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chang, C.-Y.; Liu, W. C.; Jame, M. S.; Wang, Y. H.; Luryi, S.

    1986-09-01

    A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy. Two-dimensional electron gas induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain alpha has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

  5. Structural and photoelectrical characterization of hot wall deposited CuInSe{sub 2} thin films and the fabrication of CuInSe{sub 2} based solar cells

    SciTech Connect

    Agilan, S.; Venkatachalam, S.; Mangalaraj, D. . E-mail: dmraj800@yahoo.com; Narayandass, Sa. K.; Velumani, S.; Mohan Rao, G.; Singh, Vijay P.

    2007-08-15

    Films of CuInSe{sub 2} were deposited onto glass substrates by a hot wall deposition method using bulk CuInSe{sub 2} as a source material. All the deposited CuInSe{sub 2} films were found to be polycrystalline in nature exhibiting the chalcopyrite structure with the crystallite orientation along (101),(112),(103),(211),(220),(312) and (400) directions. The photocurrent was found to increase with increase in film thickness and also with increase of light intensity. Photocurrent spectra show a peak related to the band-to-band transition. The spectral response of CuInSe{sub 2} thin films was studied by allowing the radiation to pass through a series of interference filters in the wavelength range 700-1200 nm. Films of higher thickness exhibited higher photosensitivity while low thickness films exhibited moderate photosensitivity. CuInSe{sub 2}-based Solar cells with different types of buffer layers such as CdS, CdSe, CuInSe{sub 2} and CdSe{sub 0.7}Te{sub 0.3} were fabricated. The current and voltage were measured using an optical power meter and an electrometer respectively. The fabricated solar cells were illuminated using 100 mW/cm2 white light under AM1 conditions.

  6. Epitaxial Approaches to Carbon Nanotube Organization

    NASA Astrophysics Data System (ADS)

    Ismach, Ariel

    Carbon nanotubes have unique electronic, mechanical, optical and thermal properties, which make them ideal candidates as building blocks in nano-electronic and electromechanical systems. However, their organization into well-defined geometries and arrays on surfaces remains a critical challenge for their integration into functional nanosystems. In my PhD, we developed a new approach for the organization of carbon nanotubes directed by crystal surfaces. The principle relies on the guided growth of single-wall carbon nanotubes (SWNTs) by atomic features presented on anisotropic substrates. We identified three different modes of surface-directed growth (or 'nanotube epitaxy'), in which the growth of carbon nanotubes is directed by crystal substrates: We first observed the nanotube unidirectional growth along atomic steps ('ledge-directed epitaxy') and nanofacets ('graphoepitaxy') on the surface of miscut C-plane sapphire and quartz. The orientation along crystallographic directions ('lattice-directed epitaxy') was subsequently observed by other groups on different crystals. We have proposed a "wake growth" mechanism for the nanotube alignment along atomic steps and nanofacets. In this mechanism, the catalyst nanoparticle slides along the step or facet, leaving the nanotube behind as a wake. In addition, we showed that the combination of surface-directed growth with external forces, such as electric-field and gas flow, can lead to the simultaneous formation of complex nanotube structures, such as grids and serpentines. The "wake growth" model, which explained the growth of aligned nanotubes, could not explain the formation of nanotube serpentines. For the latter, we proposed a "falling spaghetti" mechanism, in which the nanotube first grows by a free-standing process, aligned in the direction of the gas flow, then followed by absorption on the stepped surface in an oscillatory manner, due to the competition between the drag force caused by the gas flow on the suspended

  7. Dynamic nonlinearity in epitaxial BaTi O3 films

    NASA Astrophysics Data System (ADS)

    Tyunina, M.; Savinov, M.

    2016-08-01

    Dynamic dielectric and piezoelectric constants of ferroelectrics increase proportionally to the amplitude of alternating electric field as a result of hysteretic Rayleigh-type motion of domain walls. Here a hysteresis-free quadratic field dependence of the dynamic dielectric response is experimentally demonstrated in the absence of domain walls in epitaxial BaTi O3 films. This extraordinary behavior is related to polar entities, whose presence is confirmed by the Vogel-Fulcher relaxation. The polar entities are ascribed to polarization fluctuations associated with lattice inhomogeneity.

  8. Hot gas filter and system assembly

    DOEpatents

    Lippert, Thomas Edwin; Palmer, Kathryn Miles; Bruck, Gerald Joseph; Alvin, Mary Anne; Smeltzer, Eugene E.; Bachovchin, Dennis Michael

    1999-01-01

    A filter element for separating fine dirty particles from a hot gas. The filter element comprises a first porous wall and a second porous wall. Each porous wall has an outer surface and an inner surface. The first and second porous walls being coupled together thereby forming a substantially closed figure and open at one end. The open end is formed to be coupled to a hot gas clean up system support structure. The first and second porous walls define a channel beginning at the open end and terminate at the closed end through which a filtered clean gas can flow through and out into the clean gas side of a hot gas clean up system.

  9. Hot gas filter and system assembly

    DOEpatents

    Lippert, T.E.; Palmer, K.M.; Bruck, G.J.; Alvin, M.A.; Smeltzer, E.E.; Bachovchin, D.M.

    1999-08-31

    A filter element is described for separating fine dirty particles from a hot gas. The filter element comprises a first porous wall and a second porous wall. Each porous wall has an outer surface and an inner surface. The first and second porous walls being coupled together thereby forming a substantially closed figure and open at one end. The open end is formed to be coupled to a hot gas clean up system support structure. The first and second porous walls define a channel beginning at the open end and terminate at the closed end through which a filtered clean gas can flow through and out into the clean gas side of a hot gas clean up system. 8 figs.

  10. Ballistic electron magnetic microscopy on epitaxial spin valves

    NASA Astrophysics Data System (ADS)

    Heindl, E.; Vancea, J.; Back, C. H.

    2007-02-01

    The tip of a scanning tunneling microscope has been used as an injector of hot electrons or hot holes into a spin valve epitaxially grown on n-GaAs67P33 . Spin-dependent transport of injected and hole excited electrons has been studied in an external magnetic field at room temperature. Significant variations in the collector current due to the spin-dependent inelastic decay of the hot charge carriers have been measured for parallel and antiparallel configurations of the magnetization of the individual layers. We found magnetocurrent effects on the order of 600% and relative large transmission values compared to other ballistic electron magnetic microscopy studies. In addition, we investigated the excitation of electron-hole pairs with its subsequent electron transport in the spin valve and found a magnetocurrent effect with positive sign.

  11. Hot piston ring tests

    NASA Technical Reports Server (NTRS)

    Allen, David J.; Tomazic, William A.

    1987-01-01

    As part of the DOE/NASA Automotive Stirling Engine Project, tests were made at NASA Lewis Research Center to determine whether appendix gap losses could be reduced and Stirling engine performance increased by installing an additional piston ring near the top of each piston dome. An MTI-designed upgraded Mod I Automotive Stirling Engine was used. Unlike the conventional rings at the bottom of the piston, these hot rings operated in a high temperature environment (700 C). They were made of a high temperature alloy (Stellite 6B) and a high temperature solid lubricant coating (NASA Lewis-developed PS-200) was applied to the cylinder walls. Engine tests were run at 5, 10, and 15 MPa operating pressure over a range of operating speeds. Tests were run both with hot rings and without to provide a baseline for comparison. Minimum data to assess the potential of both the hot rings and high temperature low friction coating was obtained. Results indicated a slight increase in power and efficiency, an increase over and above the friction loss introduced by the hot rings. Seal leakage measurements showed a significant reduction. Wear on both rings and coating was low.

  12. The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface

    SciTech Connect

    Yang, Chen; Chen, Zhiming; Hu, Jichao; Ren, Zhanqiang; Lin, Shenghuang

    2012-06-15

    Highlights: ► A monocrystalline Si film was demonstrated by XRD to epitaxially grow on the 6H-SiC substrate. ► A 4:5 Si-to-SiC lattice matching structure was observed at the Si/SiC interface. ► The calculated value of the actual lattice mismatch is only 0.26%. ► Defects can be effectively reduced at the 4:5 Si-to-SiC lattice matching Si/SiC interface. -- Abstract: Due to a huge lattice mismatch of about 20% theoretically existing between SiC and Si, it is difficult for growing monocrystalline Si/SiC heterojunction to realize the light control of SiC devices. However, based on a 4:5 Si-to-SiC atomic lattice matching interface structure, the monocrystalline Si films were epitaxially prepared on the 6H-SiC (0 0 0 1) substrate by hot-wall chemical vapor deposition in our work. The film was characterized by X-ray diffraction analysis with only (1 1 1) orientation occurring. The X-ray rocking curves illustrated good symmetry with a full width at half maximum of 0.4339° omega. A 4:5 Si-to-SiC atomic matching structure of the Si/6H-SiC interface clearly observed by the transmission electron microscope revealed the essence of growing the monocrystalline Si film on the SiC substrate.

  13. Epitaxy: the motion picture

    NASA Astrophysics Data System (ADS)

    Finnie, Paul; Homma, Yoshikazu

    2002-03-01

    The engineering of many modern electronic devices demands control over a crystal down to the thickness of a single layer of atoms-and future demands will be even more challenging. Such control is achieved by the method of crystal growth known as epitaxy, and that makes this method the subject of intense study. More than that, recent advances are revolutionizing our knowledge of how surfaces grow. In fact, growing surfaces show a beautifully rich variety of phenomena, many of which are only now beginning to be uncovered. In the past few years many surface imaging techniques have been used to give us a close look at how crystals grow-while they are growing. The purpose of this article will be to illustrate some of the ways real surfaces grow and change as revealed by some of the latest in situ microscopic imaging technologies. It is often said that crystal growth is more of an art than a science. Here we will show that it is emphatically both.

  14. Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

    PubMed Central

    2012-01-01

    InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with an almost etching-pit-free surface do not require complex intermediate-layer epitaxial growth processes and large thickness typically required for conventional epitaxial growth. PMID:23176442

  15. Hot Canyon

    SciTech Connect

    2012-01-01

    This historical film footage, originally produced in the early 1950s as part of a series by WOI-TV, shows atomic research at Ames Laboratory. The work was conducted in a special area of the Laboratory known as the "Hot Canyon."

  16. Hot Tickets

    ERIC Educational Resources Information Center

    Fox, Bette-Lee; Hoffert, Barbara; Kuzyk, Raya; McCormack, Heather; Williams, Wilda

    2008-01-01

    This article describes the highlights of this year's BookExpo America (BEA) held at the Los Angeles Convention Center. The attendees at BEA had not minded that the air was recycled, the lighting was fluorescent, and the food was bad. The first hot book sighting came courtesy of Anne Rice. Michelle Moran, author of newly published novel, "The…

  17. Hot Canyon

    ScienceCinema

    None

    2013-03-01

    This historical film footage, originally produced in the early 1950s as part of a series by WOI-TV, shows atomic research at Ames Laboratory. The work was conducted in a special area of the Laboratory known as the "Hot Canyon."

  18. Layer Resolved Imaging of Magnetic Domain Motion in Epitaxial Heterostructures

    NASA Astrophysics Data System (ADS)

    Zohar, Sioan; Choi, Yongseong; Love, David; Mansell, Rhodri; Barnes, Crispin; Keavney, David; Rosenberg, Richard

    We use X-ray Excited Luminescence Microscopy (XELM) to image the elemental and layer resolved magnetic domain structure of an epitaxial Fe/Cr wedge/Co heterostructure in the presence of large magnetic fields. The observed magnetic domains exhibit several unique behaviors that depend on the Cr thickness (tCr) modulated interlayer exchange coupling (IEC) strength. For Cr thickness tCr??1.5?nm, strongly coupled parallel Co-Fe reversal and weakly coupled layer independent reversal are observed, respectively. The transition between these two reversal mechanisms for 0.34?wall motion and stationary zig zag domain walls. We observe domain walls nucleated at switching field minima are guided by IEC spatial gradients and collapse at switching field maxima.

  19. Solar Hot Water Heater

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The solar panels pictured below, mounted on a Moscow, Idaho home, are part of a domestic hot water heating system capable of providing up to 100 percent of home or small business hot water needs. Produced by Lennox Industries Inc., Marshalltown, Iowa, the panels are commercial versions of a collector co-developed by NASA. In an effort to conserve energy, NASA has installed solar collectors at a number of its own facilities and is conducting research to develop the most efficient systems. Lewis Research Center teamed with Honeywell Inc., Minneapolis, Minnesota to develop the flat plate collector shown. Key to the collector's efficiency is black chrome coating on the plate developed for use on spacecraft solar cells, the coating prevents sun heat from "reradiating," or escaping outward. The design proved the most effective heat absorber among 23 different types of collectors evaluated in a Lewis test program. The Lennox solar domestic hot water heating system has three main components: the array of collectors, a "solar module" (blue unit pictured) and a conventional water heater. A fluid-ethylene glycol and water-is circulated through the collectors to absorb solar heat. The fluid is then piped to a double-walled jacket around a water tank within the solar module.

  20. Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

    PubMed Central

    Mihnev, Momchil T.; Tolsma, John R.; Divin, Charles J.; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A.; MacDonald, Allan H.; Norris, Theodore B.

    2015-01-01

    In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. PMID:26399955

  1. Calorimetry of epitaxial thin films.

    PubMed

    Cooke, David W; Hellman, F; Groves, J R; Clemens, B M; Moyerman, S; Fullerton, E E

    2011-02-01

    Thin film growth allows for the manipulation of material on the nanoscale, making possible the creation of metastable phases not seen in the bulk. Heat capacity provides a direct way of measuring thermodynamic properties of these new materials, but traditional bulk calorimetric techniques are inappropriate for such a small amount of material. Microcalorimetry and nanocalorimetry techniques exist for the measurements of thin films but rely on an amorphous membrane platform, limiting the types of films which can be measured. In the current work, ion-beam-assisted deposition is used to provide a biaxially oriented MgO template on a suspended membrane microcalorimeter in order to measure the specific heat of epitaxial thin films. Synchrotron x-ray diffraction showed the biaxial order of the MgO template. X-ray diffraction was also used to prove the high quality of epitaxy of a film grown onto this MgO template. The contribution of the MgO layer to the total heat capacity was measured to be just 6.5% of the total addenda contribution. The heat capacity of a Fe(.49)Rh(.51) film grown epitaxially onto the device was measured, comparing favorably to literature data on bulk crystals. This shows the viability of the MgO∕SiN(x)-membrane-based microcalorimeter as a way of measuring the thermodynamic properties of epitaxial thin films. PMID:21361612

  2. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOEpatents

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  3. Method of depositing epitaxial layers on a substrate

    DOEpatents

    Goyal, Amit

    2003-12-30

    An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

  4. Wonderful Walls

    ERIC Educational Resources Information Center

    Greenman, Jim

    2006-01-01

    In this article, the author emphasizes the importance of "working" walls in children's programs. Children's programs need "working" walls (and ceilings and floors) which can be put to use for communication, display, storage, and activity space. The furnishings also work, or don't work, for the program in another sense: in aggregate, they serve as…

  5. Hot Meetings

    NASA Technical Reports Server (NTRS)

    Chiu, Mary

    2002-01-01

    A colleague walked by my office one time as I was conducting a meeting. There were about five or six members of my team present. The colleague, a man who had been with our institution (The Johns Hopkins Applied Physics Lab, a.k.a. APL) for many years, could not help eavesdropping. He said later it sounded like we we re having a raucous argument, and he wondered whether he should stand by the door in case things got out of hand and someone threw a punch. Our Advanced Composition Explorer (ACE) team was a hot group, to invoke the language that is fashionable today, although we never thought of ourselves in those terms. It was just our modus operandi. The tenor of the discussion got loud and volatile at times, but I prefer to think of it as animated, robust, or just plain collaborative. Mary Chiu and her "hot" team from the Johns Hopkins Applied Physics Laboratory built the Advanced Composition Explorer spacecraft for NASA. Instruments on the spacecraft continue to collect data that inform us about what's happening on our most important star, the Sun.

  6. Epitaxial silicon growth for solar cells

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Richman, D.

    1979-01-01

    The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

  7. Transitional Boundary Layers Under the Influence of High Free Stream Turbulence, Intensive Wall Cooling and High Pressure Gradients in Hot Gas Circulation. Ph.D. Thesis - Technische Hochschule, Karlsruhe, 1985

    NASA Technical Reports Server (NTRS)

    Rued, Klaus

    1987-01-01

    The requirements for fundamental experimental studies of the influence of free stream turbulence, pressure gradients and wall cooling are discussed. Under turbine-like free stream conditions, comprehensive tests of transitional boundary layers with laminar, reversing and turbulent flow increments were performed to decouple the effects of the parameters and to determine the effects during mutual interaction.

  8. Wall Turbulence.

    ERIC Educational Resources Information Center

    Hanratty, Thomas J.

    1980-01-01

    This paper gives an account of research on the structure of turbulence close to a solid boundary. Included is a method to study the flow close to the wall of a pipe without interferring with it. (Author/JN)

  9. Wall Shear Stress, Wall Pressure and Near Wall Velocity Field Relationships in a Whirling Annular Seal

    NASA Technical Reports Server (NTRS)

    Morrison, Gerald L.; Winslow, Robert B.; Thames, H. Davis, III

    1996-01-01

    The mean and phase averaged pressure and wall shear stress distributions were measured on the stator wall of a 50% eccentric annular seal which was whirling in a circular orbit at the same speed as the shaft rotation. The shear stresses were measured using flush mounted hot-film probes. Four different operating conditions were considered consisting of Reynolds numbers of 12,000 and 24,000 and Taylor numbers of 3,300 and 6,600. At each of the operating conditions the axial distribution (from Z/L = -0.2 to 1.2) of the mean pressure, shear stress magnitude, and shear stress direction on the stator wall were measured. Also measured were the phase averaged pressure and shear stress. These data were combined to calculate the force distributions along the seal length. Integration of the force distributions result in the net forces and moments generated by the pressure and shear stresses. The flow field inside the seal operating at a Reynolds number of 24,000 and a Taylor number of 6,600 has been measured using a 3-D laser Doppler anemometer system. Phase averaged wall pressure and wall shear stress are presented along with phase averaged mean velocity and turbulence kinetic energy distributions located 0.16c from the stator wall where c is the seal clearance. The relationships between the velocity, turbulence, wall pressure and wall shear stress are very complex and do not follow simple bulk flow predictions.

  10. Thermal breaking systems for metal stud walls -- Can metal stud walls perform as well as wood stud walls

    SciTech Connect

    Kosny, J.; Christian, J.E.; Desjarlais, A.O.

    1997-12-31

    Metal stud wall systems for residential buildings are gaining in popularity. Strong thermal bridges caused by highly conductive metal studs degrade the thermal performance of such walls. Several wall configurations have been developed to improve their thermal performance. The authors tried to evaluate some of these wall systems. The thermal performance of metal stud walls is frequently compared with that of wood stud walls. A reduction of the in-cavity R-value caused by the wood studs is about 10% in wood stud walls. In metal stud walls, thermal bridges generated by the metal components reduce their thermal performance by up to 55%. Today, metal stud walls are believed to be considerably less thermally effective than similar systems made of wood because steel has much higher thermal conductivity than wood. Relatively high R-values may be achieved by installing insulating sheathing, which is now widely recommended as the remedy for weak thermal performance of metal stud walls. A series of promising metal stud wall configurations was analyzed. Some of these walls were designed and tested by the authors, some were tested in other laboratories, and some were developed and forgotten a long time ago. Several types of thermal breaking systems were used in these walls. Two- and three-dimensional finite-difference computer simulations were used to analyze 20 metal stud wall configurations. Also, a series of hot-box tests were conducted on several of these walls. Test results for 22 additional metal stud walls were analyzed. Most of these walls contained conventional metal studs. Commonly used fiberglass and EPS were used as insulation materials. The most promising metal stud wall configurations have reductions in the center-of-cavity R-values of less than 20%.

  11. Epitaxial growth of CZT(S,Se) on silicon

    DOEpatents

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  12. Brush Seal Would Impede Flow Of Hot Gas

    NASA Technical Reports Server (NTRS)

    Carroll, Paul F.; Easter, Barry P.

    1993-01-01

    Proposed brush seal helps prevent recirculating flow of hot combustion gases from reaching bellows seal located deep in gap in wall of combustion chamber. More durable, more tolerant of irregularities, and easier to install. Seals also helpful in impeding deleterious flows of hot gases in other combustion chambers such as those of furnaces and turbomachines.

  13. Effect of substrate temperature on the magnetic properties of epitaxial sputter-grown Co/Pt

    SciTech Connect

    Mihai, A. P.; Whiteside, A. L.; Canwell, E. J.; Marrows, C. H.; Moore, T. A.; Benitez, M. J.; McGrouther, D.; McVitie, S.; McFadzean, S.

    2013-12-23

    Epitaxial Co/Pt films have been deposited by dc-magnetron sputtering onto heated C-plane sapphire substrates. X-ray diffraction, the residual resistivity, and transmission electron microscopy indicate that the Co/Pt films are highly ordered on the atomic scale. The coercive field and the perpendicular magnetic anisotropy increase as the substrate temperature is increased from 100–250 °C during deposition of the Co/Pt. Measurement of the domain wall creep velocity as a function of applied magnetic field yields the domain wall pinning energy, which scales with the coercive field. Evidence for an enhanced creep velocity in highly ordered epitaxial Co/Pt is found.

  14. HOT CELL BUILDING, TRA632, INTERIOR. CONTEXTUAL VIEW OF HOT CELL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. CONTEXTUAL VIEW OF HOT CELL NO. 2 FROM STAIRWAY ALONG NORTH WALL. OBSERVATION WINDOW ALONG WEST SIDE BENEATH "CELL 2" SIGN. DOORWAY IN LEFT OF VIEW LEADS TO CELL 1 WORK AREA OR TO EXIT OUTDOORS TO NORTH. RADIATION DETECTION MONITOR TO RIGHT OF DOOR. CAMERA FACING SOUTHWEST. INL NEGATIVE NO. HD46-28-3. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  15. 'Stucco' Walls

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This projected mosaic image, taken by the microscopic imager, an instrument located on the Mars Exploration Rover Opportunity 's instrument deployment device, or 'arm,' shows the partial clotting or cement-like properties of the sand-sized grains within the trench wall. The area in this image measures approximately 3 centimeters (1.2 inches) wide and 5 centimeters (2 inches) tall.(This image also appears as an inset on a separate image from the rover's navigation camera, showing the location of this particular spot within the trench wall.)

  16. Epitaxial growth of europium monoxide on diamond

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Fischer, M.; Gsell, S.; Schreck, M.; Awschalom, D. D.; Holländer, B.; Schubert, J.; Schlom, D. G.

    2013-11-25

    We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.

  17. Laser Induced Surface Chemical Epitaxy

    NASA Astrophysics Data System (ADS)

    Stinespring, Charter D.; Freedman, Andrew

    1990-02-01

    Studies of the thermal and photon-induced surface chemistry of dimethyl cadmium (DMCd) and dimethyl tellurium (DMTe) on GaAs(100) substrates under ultrahigh vacuum conditions have been performed for substrate temperatures in the range of 123 K to 473 K. Results indicate that extremely efficient conversion of admixtures of DMTe and DMCd to CdTe can be obtained using low power (5 - 10 mJ cm-2) 193 nm laser pulses at substrate temperatures of 123 K. Subsequent annealing at 473 K produces an epitaxial film.

  18. Wall Covering

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The attractive wall covering shown below is one of 132 styles in the Mirror Magic II line offered by The General Tire & Rubber Company, Akron, Ohio. The material is metallized plastic fabric, a spinoff from space programs. Wall coverings are one of many consumer applications of aluminized plastic film technology developed for NASA by a firm later bought by King-Seeley Thermos Company, Winchester, Massachusetts, which now produces the material. The original NASA use was in the Echo 1 passive communications satellite, a "space baloon" made of aluminized mylar; the high reflectivity of the metallized coating enabled relay of communications signals from one Earth station to another by "bouncing" them off the satellite. The reflectivity feature also made the material an extremely efficient insulator and it was subsequently widely used in the Apollo program for such purposes as temperature control of spacecraft components and insulation of tanks for fuels that must be maintained at very low temperatures. I Used as a wall covering, the aluminized material offers extra insulation, reflects light and I resists cracking. In addition to General Tire, King-Seeley also supplies wall covering material to Columbus Coated Fabrics Division of Borden, Incorporated, Columbus, Ohio, among others.

  19. Wall Art

    ERIC Educational Resources Information Center

    McGinley, Connie Q.

    2004-01-01

    The author of this article, an art teacher at Monarch High School in Louisville, Colorado, describes how her experience teaching in a new school presented an exciting visual challenge for an art teacher--monotonous brick walls just waiting for decoration. This school experienced only minimal instances of graffiti, but as an art teacher, she did…

  20. Epitaxial Growth and Characterization of Silicon Carbide Films

    SciTech Connect

    Dhanaraj,G.; Dudley, M.; Chen, Y.; Ragothamachar, B.; Wu, B.; Zhang, H.

    2006-01-01

    Silicon carbide (SiC) epitaxial layers have been grown in a chemical vapor deposition (CVD) system designed and fabricated in our laboratory. Silicon tetrachloride-propane as well as silane-propane were used as precursor gases. The hot zone was designed based on simulation by using numerical modeling. Growth rates up to 200 {mu}m could be achieved. A new growth-assisted hydrogen etching was developed to show the distribution of the micropipes present in the substrate. Higher growth rate was observed on off-axis (0 0 0 1) 4 H SiC compared to the on-axis (0 0 0 1) wafer and growth mechanism was explained.

  1. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  2. Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Mu, Wei; Kwak, Eun-Hye; Chen, Bingan; Huang, Shirong; Edwards, Michael; Fu, Yifeng; Jeppson, Kjell; Teo, Kenneth; Jeong, Goo-Hwan; Liu, Johan

    2016-05-01

    HASynthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT's growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1 - 2 tubes/ μm with high growth quality as shown by Raman analysis. [Figure not available: see fulltext.

  3. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  4. Origin and reduction of impurities at GaAs epitaxial layer-substrate interfaces

    NASA Astrophysics Data System (ADS)

    Kanber, H.; Yang, H. T.; Zielinski, T.; Whelan, J. M.

    1988-09-01

    Surface cleaning techniques used for semi-insulating GaAs substrates prior to epitaxial growth can have an important and sometimes detrimental effect on the quality and characteristics of epitaxial layers that are grown on them. We observe that a HF rinse followed by a 5:1:1 H 2SO 4:H 2O 2:H 2O etch and H 2O rinse drastically reduced the maximum concentrations and total amount of both SIMS detected S and Si for MOCVD grown GaAs undoped epitaxial layers. Subsequent final HCl and H 2O reduced the S interfacial residues to the SIMS detection limit. Total amounts of residual Si are estimated to be equivalent to 10 -2 to 10 -3 monolayers. Residual S is less. Alternately the S residue can be comparable reduced by a HF rinse followed by a NH 4OH:H 2O 2:H 2O etch and H 2O rinse. Hot aqueous HCl removes S but not Si residues. The Si residue is not electrically active and most likely exists as islands of SiO 2. The relative significance of the impurity residues is most pronounced for halide VPE, smaller for MBE and least for MOCVD grown GaAs epitaxial layers.

  5. Epitaxial growth and stress relaxation of vapor-deposited Fe-Pd magnetic shape memory films

    NASA Astrophysics Data System (ADS)

    Kühnemund, L.; Edler, T.; Kock, I.; Seibt, M.; Mayr, S. G.

    2009-11-01

    To achieve maximum performance in microscale magnetic shape memory actuation devices epitaxial films several hundred nanometers thick are needed. Epitaxial films were grown on hot MgO substrates (500 °C and above) by e-beam evaporation. Structural properties and stress relaxation mechanisms were investigated by high-resolution transmission electron microscopy, in situ substrate curvature measurements and classical molecular dynamics (MD) simulations. The high misfit stress incorporated during Vollmer-Weber growth at the beginning was relaxed by partial or perfect dislocations depending on the substrate temperature. This relaxation allowed the avoidance of a stress-induced breakdown of epitaxy and no thickness limit for epitaxy was found. For substrate temperatures of 690 °C or above, the films grew in the fcc austenite phase. Below this temperature, iron precipitates were formed. MD simulations showed how these precipitates influence the movements of partial dislocations, and can thereby explain the higher stress level observed in the experiments in the initial stage of growth for these films.

  6. Flow Characteristics of Plane Wall Jet with Side Walls on Both Sides

    NASA Astrophysics Data System (ADS)

    Imao, Shigeki; Kikuchi, Satoshi; Kozato, Yasuaki; Hayashi, Takayasu

    Flow characteristics of a two-dimensional jet with side walls have been studied experimentally. Three kinds of cylindrical walls and a flat wall were provided as the side walls, and they were combined and attached to a nozzle. Nine types of side wall conditions were investigated. Velocity was measured by a hot-wire probe and the separation point was measured by a Pitot tube. Mean velocity profiles, the growth of the jet half-width, the decay of jet maximum velocity, and the attachment distance were clarified. When cylindrical walls with different radii are installed, the flow pattern changes markedly depending on the velocity of the jet. A striking increase in the jet half-width is related to the separation of flow from the smaller cylindrical wall just behind the nozzle.

  7. Ion implanted epitaxially grown ZnSe

    NASA Technical Reports Server (NTRS)

    1974-01-01

    The epitaxial growth of ZnSe on (100) Ge using the close-spaced transport process is described. Substrate temperature of 575 C and source temperatures of 675 C yield 10 micron, single crystal layers in 10 hours. The Ge substrates provides a nonreplenishable chemical transport agent and the epitaxial layer thickness is limited to approximately 10 microns. Grown epitaxial layers show excellent photoluminescence structure at 77 K. Grown layers exhibit high resistivity, and annealing in Zn vapor at 575 C reduces the resistivity to 10-100 ohms-cm. Zinc vapor annealing quenches the visible photoluminescence.

  8. Epitaxial silicon devices for dosimetry applications

    SciTech Connect

    Bruzzi, M.; Bucciolini, M.; Casati, M.; Menichelli, D.; Talamonti, C.; Piemonte, C.; Svensson, B. G.

    2007-04-23

    A straightforward improvement of the efficiency and long term stability of silicon dosimeters has been obtained with a n{sup +}-p junction surrounded by a guard-ring structure implanted on an epitaxial p-type Si layer grown on a Czochralski substrate. The sensitivity of devices made on 50-{mu}m-thick epitaxial Si degrades by only 7% after an irradiation with 6 MeV electrons up to 1.5 kGy, and shows no significant further decay up to 10 kGy. These results prove the enhanced radiation tolerance and stability of epitaxial diodes as compared to present state-of-the-art Si devices.

  9. Electroless epitaxial etching for semiconductor applications

    DOEpatents

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  10. High throughput vacuum chemical epitaxy

    NASA Astrophysics Data System (ADS)

    Fraas, L. M.; Malocsay, E.; Sundaram, V.; Baird, R. W.; Mao, B. Y.; Lee, G. Y.

    1990-10-01

    We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated at one time. Our vacuum chemical epitaxy reactor closely resembles a molecular beam epitaxy system in that wafers are loaded into a stainless steel vacuum chamber through a load chamber. Also as in MBE, arsenic vapors are supplied as reactant by heating solid arsenic sources thereby avoiding the use of arsine. However, in our VCE reactor, a large number of wafers are coated at one time in a vacuum system by the substitution of Group III alkyl sources for the elemental metal sources traditionally used in MBE. Higher wafer throughput results because in VCE, the metal-alkyl sources for Ga, Al, and dopants can be mixed at room temperature and distributed uniformly though a large area injector to multiple substrates as a homogeneous array of mixed element molecular beams. The VCE reactor that we have built and that we shall describe here uniformly deposits films on 7 inch diameter substrate platters. Each platter contains seven two inch or three 3 inch diameter wafers. The load chamber contains up to nine platters. The vacuum chamber is equipped with two VCE growth zones and two arsenic ovens, one per growth zone. Finally, each oven has a 1 kg arsenic capacity. As of this writing, mirror smooth GaAs films have been grown at up to 4 μm/h growth rate on multiple wafers with good thickness uniformity. The background doping is p-type with a typical hole concentration and mobility of 1 × 10 16/cm 3 and 350 cm 2/V·s. This background doping level is low enough for the fabrication of MESFETs, solar cells, and photocathodes as well as other types of devices. We have fabricated MESFET devices using VCE-grown epi wafers with peak extrinsic transconductance as high as 210 mS/mm for a threshold voltage of - 3 V and a 0.6 μm gate length. We have also recently grown AlGaAs epi layers with up to 80% aluminum using TEAl as the aluminum alkyl source. The Al

  11. Epitaxial growth of silicon for layer transfer

    SciTech Connect

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  12. Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

    SciTech Connect

    Idigoras, O. Suszka, A. K.; Berger, A.; Vavassori, P.; Obry, B.; Hillebrands, B.; Landeros, P.

    2014-02-28

    This work studies the influence of crystallographic alignment onto magnetization reversal in partially epitaxial Co films. A reproducible growth sequence was devised that allows for the continuous tuning of grain orientation disorder in Co films with uniaxial in-plane anisotropy by the controlled partial suppression of epitaxy. While all stable or meta-stable magnetization states occurring during a magnetic field cycle exhibit a uniform magnetization for fully epitaxial samples, non-uniform states appear for samples with sufficiently high grain orientation disorder. Simultaneously with the occurrence of stable domain states during the magnetization reversal, we observe a qualitative change of the applied field angle dependence of the coercive field. Upon increasing the grain orientation disorder, we observe a disappearance of transient domain wall propagation as the dominating reversal process, which is characterized by an increase of the coercive field for applied field angles away from the easy axis for well-ordered epitaxial samples. Upon reaching a certain disorder threshold level, we also find an anomalous magnetization reversal, which is characterized by a non-monotonic behavior of the remanent magnetization and coercive field as a function of the applied field angle in the vicinity of the nominal hard axis. This anomaly is a collective reversal mode that is caused by disorder-induced frustration and it can be qualitatively and even quantitatively explained by means of a two Stoner-Wohlfarth particle model. Its predictions are furthermore corroborated by Kerr microscopy and by Brillouin light scattering measurements.

  13. Correlations between coercivity and exchange bias in epitaxial NiO-Co(110) bilayers

    NASA Astrophysics Data System (ADS)

    Dubourg, S.; Bobo, J. F.; Ousset, J. C.; Warot, B.; Snoeck, E.

    2002-05-01

    We have sputtered epitaxial NiO-Co samples on MgO (110) substrates. NiO epitaxially grows on the isostructural fcc MgO substrate but, due to surface energy minimization, its surface morphology is saw-tooth-like with terraces aligned along [001] direction and either (100) or (010) termination planes. The obtained nanostructures are 80-200 Å wide facets with micron-size length. Subsequently deposited Co layers adopt a fcc structure conformal with the NiO nanofacets. It consists thus in a set of connected nanostripes as evidenced by complementary structural characterizations. Shape anisotropy induces a strong easy axis along the stripe edges [001] and a hard axis along the [-110] MgO direction. Magnetization loops recorded along [001] have a total squareness. Thermal treatments were done in zero field for investigating the NiO/Co exchange thermal stability and activation. We observed thermally assisted exchange bias field (HE) variations on 1000 Oe field treated samples for various temperatures between 300 K and 400 K. Similar experiments were also performed on polycrystalline bilayers for comparison. For all samples (polycrystalline and epitaxial), thermal treatments induce a HE raise with a kinetics related to the anneal temperature. However, while the coercive field HC of epitaxial samples is significantly reduced, one of the polycrystalline samples remains constant. The ferromagnetic domain wall pinning at antiferromagnetic antiphase boundaries explains both results.

  14. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  15. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  16. MHD Electrode and wall constructions

    DOEpatents

    Way, Stewart; Lempert, Joseph

    1984-01-01

    Electrode and wall constructions for the walls of a channel transmitting the hot plasma in a magnetohydrodynamic generator. The electrodes and walls are made of a plurality of similar modules which are spaced from one another along the channel. The electrodes can be metallic or ceramic, and each module includes one or more electrodes which are exposed to the plasma and a metallic cooling bar which is spaced from the plasma and which has passages through which a cooling fluid flows to remove heat transmitted from the electrode to the cooling bar. Each electrode module is spaced from and electrically insulated from each adjacent module while interconnected by the cooling fluid which serially flows among selected modules. A wall module includes an electrically insulating ceramic body exposed to the plasma and affixed, preferably by mechanical clips or by brazing, to a metallic cooling bar spaced from the plasma and having cooling fluid passages. Each wall module is, similar to the electrode modules, electrically insulated from the adjacent modules and serially interconnected to other modules by the cooling fluid.

  17. Cooling wall

    SciTech Connect

    Nosenko, V.I.

    1995-07-01

    Protecting the shells of blast furnaces is being resolved by installing cast iron cooling plates. The cooling plates become non-operational in three to five years. The problem is that defects occur in manufacturing the cooling plates. With increased volume and intensity of work placed on blast furnaces, heat on the cast iron cooling plates reduces their reliability that limits the interim repair period of blast furnaces. Scientists and engineers from the Ukraine studied this problem for several years, developing a new method of cooling the blast furnace shaft called the cooling wall. Traditional cast iron plates were replaced by a screen of steel tubes, with the area between the tubes filled with fireproof concrete. Before placing the newly developed furnace shaft into operation, considerable work was completed such as theoretical calculations, design, research of temperature fields and tension. Continual testing over many years confirms the value of this research in operating blast furnaces. The cooling wall works with water cooling as well as vapor cooling and is operating in 14 blast furnaces in the Ukraine and two in Russia, and has operated for as long as 14 years.

  18. Epitaxial graphene quantum dots for high-performance terahertz bolometers

    NASA Astrophysics Data System (ADS)

    El Fatimy, Abdel; Myers-Ward, Rachael L.; Boyd, Anthony K.; Daniels, Kevin M.; Gaskill, D. Kurt; Barbara, Paola

    2016-04-01

    Light absorption in graphene causes a large change in electron temperature due to the low electronic heat capacity and weak electron–phonon coupling. This property makes graphene a very attractive material for hot-electron bolometers in the terahertz frequency range. Unfortunately, the weak variation of electrical resistance with temperature results in limited responsivity for absorbed power. Here, we show that, due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K‑1 below 6 K), leading to responsivities of 1 × 1010 V W‑1, a figure that is five orders of magnitude higher than other types of graphene hot-electron bolometer. The high responsivity, combined with an extremely low electrical noise-equivalent power (∼2 × 10‑16 W Hz‑1/2 at 2.5 K), already places our bolometers well above commercial cooled bolometers. Additionally, we show that these quantum dot bolometers demonstrate good performance at temperature as high as 77 K.

  19. Epitaxial graphene quantum dots for high-performance terahertz bolometers.

    PubMed

    El Fatimy, Abdel; Myers-Ward, Rachael L; Boyd, Anthony K; Daniels, Kevin M; Gaskill, D Kurt; Barbara, Paola

    2016-04-01

    Light absorption in graphene causes a large change in electron temperature due to the low electronic heat capacity and weak electron-phonon coupling. This property makes graphene a very attractive material for hot-electron bolometers in the terahertz frequency range. Unfortunately, the weak variation of electrical resistance with temperature results in limited responsivity for absorbed power. Here, we show that, due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K(-1) below 6 K), leading to responsivities of 1 × 10(10) V W(-1), a figure that is five orders of magnitude higher than other types of graphene hot-electron bolometer. The high responsivity, combined with an extremely low electrical noise-equivalent power (∼2 × 10(-16) W Hz(-1/2) at 2.5 K), already places our bolometers well above commercial cooled bolometers. Additionally, we show that these quantum dot bolometers demonstrate good performance at temperature as high as 77 K. PMID:26727199

  20. Modelling Hot Air Balloons.

    ERIC Educational Resources Information Center

    Brimicombe, M. W.

    1991-01-01

    A macroscopic way of modeling hot air balloons using a Newtonian approach is presented. Misleading examples using a car tire and the concept of hot air rising are discussed. Pressure gradient changes in the atmosphere are used to explain how hot air balloons work. (KR)

  1. 14. View of interior, north and east walls featuring sink, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. View of interior, north and east walls featuring sink, facing east (Note: B/W scale on wall in foreground is in 1/2 ft increments) - Nevada Test Site, Reactor Maintenance & Disassembly Complex, Junior Hot Cell, Jackass Flats, Area 25, South of intersection of Roads F & G, Mercury, Nye County, NV

  2. Prototype solar domestic hot water systems

    NASA Technical Reports Server (NTRS)

    1978-01-01

    Construction of a double wall heat exchanger using soft copper tube coiled around a hot water storage tank was completed and preliminary tests were conducted. Solar transport water to tank potable water heat exchange tests were performed with a specially constructed test stand. Work was done to improve the component hardware and system design for the solar water heater. The installation of both a direct feed system and a double wall heat exchanger system provided experience and site data to enable informative decisions to be made as the solar market expands into areas where freeze protection is required.

  3. Hot cell shield plug extraction apparatus

    DOEpatents

    Knapp, Philip A.; Manhart, Larry K.

    1995-01-01

    An apparatus is provided for moving shielding plugs into and out of holes in concrete shielding walls in hot cells for handling radioactive materials without the use of external moving equipment. The apparatus provides a means whereby a shield plug is extracted from its hole and then swung approximately 90 degrees out of the way so that the hole may be accessed. The apparatus uses hinges to slide the plug in and out and to rotate it out of the way, the hinge apparatus also supporting the weight of the plug in all positions, with the load of the plug being transferred to a vertical wall by means of a bolting arrangement.

  4. Effects of contamination on selective epitaxial growth

    NASA Astrophysics Data System (ADS)

    MacDonald, Brian J.; Paton, Eric; Adem, Ercan; En, Bill

    2004-06-01

    As MOSFET dimensions scale down in size, it has become increasingly difficult to maintain high drive current while suppressing the off-state leakage current. One method of avoiding short-channel effects is to scale the source/drain (S/D) junction depths proportionally with the gate length. Unfortunately, this increases the S/D resistance, which slows the circuit. To keep the S/D junction shallow without affecting the S/D resistance, a raised S/D (RSD) structure is required. Integrating RSD can be difficult. Selective epitaxial growth (SEG) is the process used to incorporate RSD. This process requires a relatively clean surface to initiate the growth. Insertion of SEG earlier in the process flow facilitates selective epitaxial growth. Insertion of SEG later in the process flow results in higher levels of contamination at the interface of the Si substrate and the RSD structure. In this paper, we identify some mechanisms that determine the quality of the selective epitaxial film. Results indicate that Si defects are not a dominant mechanism in SEG film quality. Instead, results suggest that higher levels of contamination increased the surface roughness of the epitaxial film. PMOS regions were found to have higher levels of contamination and rougher epitaxial films than NMOS regions. Hydrogen bake as high as 900 °C was required to lower the surface contamination and provide excellent epitaxial morphology. Unfortunately, this high temperature causes enhanced dopant diffusion and deactivation of the device. Previous work [H. van Meer, K. De Meyer, Symposium on VLSI Technology Digest of Technical Papers, 2002, p. 170.] identified an alternative integration that provides excellent quality selective epitaxy, without dopant diffusion and deactivation.

  5. Superconducting cuprate heterostructures for hot electron bolometers

    NASA Astrophysics Data System (ADS)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  6. Superconducting cuprate heterostructures for hot electron bolometers

    SciTech Connect

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-25

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La{sub 2−x}Sr{sub x}CuO{sub 4} layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI{sup 3}, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g{sub e−ph}≈1 W/K cm{sup 2} at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  7. Engineering epitaxial graphene with oxygen

    NASA Astrophysics Data System (ADS)

    Kimouche, Amina; Martin, Sylvain; Winkelmann, Clemens; Fruchart, Olivier; Courtois, Hervé; Coraux, Johann; Hybrid system at low dimension Team

    2013-03-01

    Almost free-standing graphene can be obtained on metals by decoupling graphene from its substrate, for instance by intercalation of atoms beneath graphene, as it was shown with oxygen atoms. We show that the interaction of oxygen with epitaxial graphene on iridium leads to the formation of an ultrathin crystalline oxide extending between graphene and the metallic substrate via the graphene wrinkles. Graphene studied in this work was prepared under ultra-high vacuum by CVD. The samples were studied by combining scanning probe microscopy (STM, AFM) and spatially resolved spectroscopy (Raman, STS). The ultrathin oxide forms a decoupling barrier layer between graphene and Ir, yielding truly free-standing graphene whose hybridization and charge transfers with the substrate have been quenched. Our work presents novel types of graphene-based nanostructures, and opens the route to the transfer-free preparation of graphene directly onto an insulating support contacted to the metallic substrate which could serve as a gate electrode. Work supported by the EU-NMP GRENADA project

  8. Spin transport in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Tbd, -

    2014-03-01

    Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

  9. Nanoimprint-lithography patterned epitaxial Fe nanowire arrays with misaligned magnetocrystalline and shape anisotropies

    SciTech Connect

    Zhang, Wei; Bowden, Mark E.; Krishnan, Kannan M.

    2013-01-01

    We fabricated large area (>1 × 1 cm2), epitaxial Fe nanowire arrays on MgO(001) substrates by nanoimprint lithography with a direct metallization of epitaxial materials through a metallic mask, which avoided the disadvantageous metal-etching process in conventional methods. The magnetization reversals, as revealed by magneto-optic Kerr effect, showed competing effects between Fe cubic magnetocrystalline anisotropy and lithographically induced uniaxial shape anisotropy. Unlike the weakly induced uniaxial anisotropy observed in continuous films, both the magnitude and direction of the uniaxial shape anisotropy can be easily modulated in the nanowires. Complex magnetization reversal processes including two-step and three-step loops were observed when magnetizing the samples along different Fe cubic easy axes, respectively. Finally, these modified magnetization reversal processes were explained by the nucleation and propagation of the domain walls along the non-superimposed easy axes of the competing magnetocrystalline and shape anisotropies.

  10. Radioactive hot cell access hole decontamination machine

    DOEpatents

    Simpson, William E.

    1982-01-01

    Radioactive hot cell access hole decontamination machine. A mobile housing has an opening large enough to encircle the access hole and has a shielding door, with a door opening and closing mechanism, for uncovering and covering the opening. The housing contains a shaft which has an apparatus for rotating the shaft and a device for independently translating the shaft from the housing through the opening and access hole into the hot cell chamber. A properly sized cylindrical pig containing wire brushes and cloth or other disks, with an arrangement for releasably attaching it to the end of the shaft, circumferentially cleans the access hole wall of radioactive contamination and thereafter detaches from the shaft to fall into the hot cell chamber.

  11. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals

    NASA Astrophysics Data System (ADS)

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-01

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni

  12. Stress-induced phase transition in ferroelectric domain walls of BaTiO3

    NASA Astrophysics Data System (ADS)

    Stepkova, V.; Marton, P.; Hlinka, J.

    2012-05-01

    The seminal paper by Zhirnov (1958 Zh. Eksp. Teor. Fiz. 35 1175-80) explained why the structure of domain walls in ferroelectrics and ferromagnets is drastically different. Here we show that the antiparallel ferroelectric walls in rhombohedral ferroelectric BaTiO3 can be switched between the Ising-like state (typical for ferroelectrics) and a Bloch-like state (unusual for ferroelectric walls but typical for magnetic ones). Phase-field simulations using a Ginzburg-Landau-Devonshire model suggest that this symmetry-breaking transition can be induced by a compressive epitaxial stress. The strain-tunable chiral properties of these domain walls promise a range of novel phenomena in epitaxial ferroelectric thin films.

  13. Epitaxial growth of two-dimensional stanene

    NASA Astrophysics Data System (ADS)

    Zhu, Feng-Feng; Chen, Wei-Jiong; Xu, Yong; Gao, Chun-Lei; Guan, Dan-Dan; Liu, Can-Hua; Qian, Dong; Zhang, Shou-Cheng; Jia, Jin-Feng

    2015-10-01

    Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and mechanical exfoliation. However, the synthesis of Sn-based stanene has proved challenging so far. Here, we report the successful fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characterization using scanning tunnelling microscopy and angle-resolved photoemission spectroscopy, in combination with first-principles calculations. The synthesis of stanene and its derivatives will stimulate further experimental investigation of their theoretically predicted properties, such as a 2D topological insulating behaviour with a very large bandgap, and the capability to support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall effect.

  14. Effect of ferroelastic twin walls on local polarization switching: Phase-field modeling

    NASA Astrophysics Data System (ADS)

    Choudhury, S.; Zhang, J. X.; Li, Y. L.; Chen, L. Q.; Jia, Q. X.; Kalinin, S. V.

    2008-10-01

    Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180° domain switching is closely related to the number of such local defects.

  15. Effect of ferroelastic twin walls on local polarizations switching - phase field modeling

    SciTech Connect

    Jia, Quanzi; Choudhury, S; Zhang, J X; Li, Y L; Chen, Q; Kalinin, S V

    2008-01-01

    Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180{sup o} domain switching is closely related to the number of such local defects.

  16. Chemical vapor deposition of epitaxial silicon

    DOEpatents

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  17. Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute

    SciTech Connect

    Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

    2011-01-01

    We have grown device-quality epitaxial silicon thin films at growth rates up to 1.85 {micro}m/min, using hot-wire chemical vapor deposition from silane, at substrate temperatures below 750 C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 {micro}m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 {micro}m thick epitaxial silicon absorber layer was grown at 0.7 {micro}m/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

  18. Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide.

    PubMed

    Laha, Apurba; Bugiel, E; Jestremski, M; Ranjith, R; Fissel, A; Osten, H J

    2009-11-25

    An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique. PMID:19875877

  19. Role of interface band structure on hot electron transport

    NASA Astrophysics Data System (ADS)

    Garramone, John J.

    Knowledge of electron transport through materials and interfaces is fundamentally and technologically important. For example, metal interconnects within integrated circuits suffer increasingly from electromigration and signal delay due to an increase in resistance from grain boundary and sidewall scattering since their dimensions are becoming shorter than the electron mean free path. Additionally, all semiconductor based devices require the transport of electrons through materials and interfaces where scattering and parallel momentum conservation are important. In this thesis, the inelastic and elastic scattering of hot electrons are studied in nanometer thick copper, silver and gold films deposited on silicon substrates. Hot electrons are electron with energy greater than kBT above the Fermi level (EF). This work was performed utilizing ballistic electron emission microscopy (BEEM) which is a three terminal scanning tunneling microscopy (STM) technique that measures the percentage of hot electrons transmitted across a Schottky barrier interface. Hot electron attenuation lengths of the metals were extracted by measuring the BEEM current as a function of metal overlayer thickness for both hot electron and hot hole injection at 80 K and under ultra high vacuum. The inelastic and elastic scattering lengths were extracted by fitting the energetic dependence of the measured attenuation lengths to a Fermi liquid based model. A sharp increase in the attenuation length is observed at low injection energies, just above the Schottky barrier height, only for metals on Si(001) substrates. In contrast, the attenuation length measured on Si(111) substrates shows a sharp decrease. These results indicate that interface band structure and parallel momentum conservation have significant impact upon the transport of hot electrons across non epitaxial metal-semiconductor interfaces. In addition, they help to separate effects upon hot electron transport that are inherent to the metal

  20. Hot Spot at Yellowstone

    ERIC Educational Resources Information Center

    Dress, Abby

    2005-01-01

    Within this huge national park (over two million acres spread across Wyoming, Montana, and Idaho) are steaming geysers, hot springs, bubbling mudpots, and fumaroles, or steam vents. Drives on the main roads of Yellowstone take tourists through the major hot attractions, which also include Norris Geyser Basin, Upper and Lower Geyser Basin, West…

  1. The Earth's Hot Spots.

    ERIC Educational Resources Information Center

    Vink, Gregory E.; And Others

    1985-01-01

    Hot spots are isolated areas of geologic activity where volcanic eruptions, earthquakes, and upwelling currents occur far from plate boundaries. These mantle plumes are relatively stable and crustal plates drift over them. The nature and location of hot spots (with particular attention to the Hawaiian Islands and Iceland) are discussed. (DH)

  2. Computer simulation of ferroelectric domain structures in epitaxial BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Zhang, J. X.; Li, Y. L.; Choudhury, S.; Chen, L. Q.; Chu, Y. H.; Zavaliche, F.; Cruz, M. P.; Ramesh, R.; Jia, Q. X.

    2008-05-01

    Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFeO3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFeO3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the {110}c-type domain wall orientation on substrate constraint for the (001)c oriented BiFeO3 thin film was also discussed.

  3. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    SciTech Connect

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V.; Sardela, Mauro; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  4. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Sardela, Mauro; Zuo, Jianmin; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting; Braun, Paul V.

    2015-12-01

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  5. Epitaxial solar-cell fabrication, phase 2

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1977-01-01

    Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

  6. Epitaxy of semiconductor-superconductor nanowires.

    PubMed

    Krogstrup, P; Ziino, N L B; Chang, W; Albrecht, S M; Madsen, M H; Johnson, E; Nygård, J; Marcus, C M; Jespersen, T S

    2015-04-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures. PMID:25581626

  7. 6. HOT AIR PORTION OF DAMPERS. Hot Springs National ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. HOT AIR PORTION OF DAMPERS. - Hot Springs National Park, Bathhouse Row, Lamar Bathhouse: Mechanical & Piping Systems, State Highway 7, 1 mile north of U.S. Highway 70, Hot Springs, Garland County, AR

  8. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals.

    PubMed

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-21

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices. PMID:27129106

  9. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  10. Rarefied gas flow behavior in micro/nanochannels under specified wall heat flux

    NASA Astrophysics Data System (ADS)

    Balaj, Mojtaba; Akhlaghi, Hassan; Roohi, Ehsan

    2015-01-01

    In this paper, we investigate the effects of convective heat transfer on the argon gas flow through micro/nanochannels subject to uniform wall heat flux (UWH) boundary condition using the direct simulation Monte Carlo (DSMC) method. Both the hot wall (qwall > 0) and the cold wall (qwall < 0) cases are considered. We consider the effect of wall heat flux on the centerline pressure, velocity profile and mass flow rate through the channel in the slip regime. The effects of rarefaction, property variations and compressibility are considered. We show that UWH boundary condition leads to the thermal transpiration. Our investigations showed that this thermal transpiration enhances the heat transfer rate at the walls in the case of hot walls and decreases it where the walls are being cooled. We also show that the deviation of the centerline pressure distribution from the linear distribution depends on the direction of the wall heat flux.

  11. HOT CELL BUILDING, TRA632, INTERIOR. HOT CELL NO. 1 (THE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. HOT CELL NO. 1 (THE FIRST BUILT) IN LABORATORY 101. CAMERA FACES SOUTHEAST. SHIELDED OPERATING WINDOWS ARE ON LEFT (NORTH) SIDE. OBSERVATION WINDOW IS AT LEFT OF VIEW (ON WEST SIDE). PLASTIC COVERS SHROUD MASTER/SLAVE MANIPULATORS AT WINDOWS IN LEFT OF VIEW. NOTE MINERAL OIL RESERVOIR ABOVE "CELL 1" SIGN, INDICATING LEVEL OF THE FLUID INSIDE THE THICK WINDOWS. HOT CELL HAS BEVELED CORNER BECAUSE A SQUARED CORNER WOULD HAVE SUPPLIED UNNECESSARY SHIELDING. NOTE PUMICE BLOCK WALL AT LEFT OF VIEW. INL NEGATIVE NO. HD46-28-1. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  12. Wall surveyor project report

    SciTech Connect

    Mullenhoff, D.J.; Johnston, B.C.; Azevedo, S.G.

    1996-02-22

    A report is made on the demonstration of a first-generation Wall Surveyor that is capable of surveying the interior and thickness of a stone, brick, or cement wall. LLNL`s Micropower Impulse Radar is used, based on emitting and detecting very low amplitude and short microwave impulses (MIR rangefinder). Six test walls were used. While the demonstrator MIR Wall Surveyor is not fieldable yet, it has successfully scanned the test walls and produced real-time images identifying the walls. It is planned to optimize and package the evaluation wall surveyor into a hand held unit.

  13. Wind tunnel wall interference

    NASA Technical Reports Server (NTRS)

    Newman, Perry A.; Mineck, Raymond E.; Barnwell, Richard W.; Kemp, William B., Jr.

    1986-01-01

    About a decade ago, interest in alleviating wind tunnel wall interference was renewed by advances in computational aerodynamics, concepts of adaptive test section walls, and plans for high Reynolds number transonic test facilities. Selection of NASA Langley cryogenic concept for the National Transonic Facility (NTF) tended to focus the renewed wall interference efforts. A brief overview and current status of some Langley sponsored transonic wind tunnel wall interference research are presented. Included are continuing efforts in basic wall flow studies, wall interference assessment/correction procedures, and adaptive wall technology.

  14. If walls could talk

    NASA Technical Reports Server (NTRS)

    Braam, J.; McIntire, L. V. (Principal Investigator)

    1999-01-01

    The plant cell wall is very complex, both in structure and function. The wall components and the mechanical properties of the wall have been implicated in conveying information that is important for morphogenesis. Proteoglycans, fragments of polysaccharides and the structural integrity of the wall may relay signals that influence cellular differentiation and growth control. Furthering our knowledge of cell wall structure and function is likely to have a profound impact on our understanding of how plant cells communicate with the extracellular environment.

  15. Epitaxial piezoelectric thick film heterostructures on silicon

    NASA Astrophysics Data System (ADS)

    Kim, Dong Min

    The significantly higher dielectric permittivity, piezoelectric coefficients and electromechanical coupling coefficients of single crystal relaxor ferroelectrics make them very attractive for medical ultrasound transducers and microelectromechanical systems (MEMS) applications. The potential impact of thin-film relaxor ferroelectrics in integrated actuators and sensor on silicon has stimulated research on the growth and characterization of epitaxial piezoelectric thin films. We have fabricated heterostructures by (1) synthesizing optimally-oriented, epitaxial thin films of Pb(Mg1/3Nb2/3)O3-PbTiO 3 (PMN-PT) on miscut (001) Si wafers with epitaxial (001) SrTiO 3 template layers, where the single crystal form is known to have the giant piezoelectric response, and (2) nano-structuring to reduce the constraint imposed by the underlying silicon substrate. Up to now, the longitudinal piezoelectric coefficient (d33) values of PMN and PMN-PT thin films range from 50 to 200 pC/N have been reported, which are far inferior to the properties of bulk single crystals value (d33 ˜ 2000 pC/N). These might be attributed to substrate constraints, pyrochlore phases and other effects. Here, we have realized the giant d33 values by fabricating epitaxial PMN-PT thick films on silicon. When the PMN-PT film was subdivided into ˜1 mum2 capacitors by focused ion beam processing, a 4 mum thick film shows a low-field d33 of 800 pm/V that increases to over 1200 pm/V under bias, which is the highest d33 value ever realized on silicon substrates. These high piezo-reponse PMN-PT epitaxial heterostructures can be used for multilayered MEMS devices which function with low driving voltage, high frequency ultrasound transducer arrays for medical imaging, and capacitors for charge and energy storage. Since these PMN-PT films are epitaxially integrated with the silicon, they can make use of the well-developed fabrication process for patterning and micromachining of this large-area, cost

  16. A&M. Hot liquid waste treatment building (TAN616). Camera facing southwest. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616). Camera facing southwest. Oblique view of east and north walls. Note three corrugated pipes at lower left indicating location of underground hot waste storage tanks. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-4 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  17. In hot water, again

    NASA Astrophysics Data System (ADS)

    Basden, Alastair; Watkins, Sheila

    2009-10-01

    Regarding Norman Willcox's letter about the problems of using solar panels for domestic heating (August p21), I also have thermal solar panels installed. However, contrary to his disappointing experience, I have found that they provide my family with a useful amount of hot water. In our system, the solar energy is used to heat a store of water, which has no other source of heat. Mains-pressure cold water passes through this store via a heat exchanger, removing heat from it and warming up. If the water becomes warm enough, an unpowered thermostatic valve allows it to go straight to the hot taps (mixing it with cold if it is too hot). However, if it is not hot enough, then the water is directed first through our previously installed gaspowered combination boiler and then to the taps.

  18. Reactor hot spot analysis

    SciTech Connect

    Vilim, R.B.

    1985-08-01

    The principle methods for performing reactor hot spot analysis are reviewed and examined for potential use in the Applied Physics Division. The semistatistical horizontal method is recommended for future work and is now available as an option in the SE2-ANL core thermal hydraulic code. The semistatistical horizontal method is applied to a small LMR to illustrate the calculation of cladding midwall and fuel centerline hot spot temperatures. The example includes a listing of uncertainties, estimates for their magnitudes, computation of hot spot subfactor values and calculation of two sigma temperatures. A review of the uncertainties that affect liquid metal fast reactors is also presented. It was found that hot spot subfactor magnitudes are strongly dependent on the reactor design and therefore reactor specific details must be carefully studied. 13 refs., 1 fig., 5 tabs.

  19. Saturn's Hot Plasma Explosions

    NASA Video Gallery

    This animation based on data obtained by NASA's Cassini Spacecraft shows how the "explosions" of hot plasma on the night side (orange and white) periodically inflate Saturn's magnetic field (white ...

  20. Hot Oiling Spreadsheet

    Energy Science and Technology Software Center (ESTSC)

    1993-10-22

    One of the most common oil-field treatments is hot oiling to remove paraffin from wells. Even though the practice is common, the thermal effectiveness of the process is not commonly understood. In order for producers to easily understand the thermodynamics of hot oiling, a simple tool is needed for estimating downhole temperatures. Such a tool has been developed that can be distributed as a compiled spreadsheet.

  1. One-dimensional domain walls in thin ferromagnetic films with fourfold anisotropy

    NASA Astrophysics Data System (ADS)

    Lund, Ross G.; Muratov, Cyrill B.

    2016-06-01

    We study the properties of domain walls and domain patterns in ultrathin epitaxial magnetic films with two orthogonal in-plane easy axes, which we call fourfold materials. In these materials, the magnetization vector is constrained to lie entirely in the film plane and has four preferred directions dictated by the easy axes. We prove the existence of {{90}\\circ} and {{180}\\circ} domain walls in these materials as minimizers of a nonlocal one-dimensional energy functional. Further, we investigate numerically the role of the considered domain wall solutions for pattern formation in a rectangular sample.

  2. Ferroelastic twin structures in epitaxial WO3 thin films

    NASA Astrophysics Data System (ADS)

    Yun, Shinhee; Woo, Chang-Su; Kim, Gi-Yeop; Sharma, Pankaj; Lee, Jin Hong; Chu, Kanghyun; Song, Jong Hyun; Chung, Sung-Yoon; Seidel, Jan; Choi, Si-Young; Yang, Chan-Ho

    2015-12-01

    Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO3 single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic <100> axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic <110> axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ˜0.6 and ˜0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.

  3. Studies of Epitaxial Silicon Nanowire Growth at Low Temperature

    NASA Astrophysics Data System (ADS)

    Joun, Hee-Joung

    Silicon nanowires were grown epitaxially on Si (100) and (111) surfaces using the Vapor-Liquid-Solid (VLS) mechanism under both thermal and plasma enhanced growth conditions. Nanowire morphology was investigated as a function of temperature, time, disilane partial pressure and substrate preparation. Silicon nanowires synthesized in low temperature plasma typically curved compared to the linear nanowires grown under simple thermal conditions. The nanowires tended bend more with increasing disilane partial gas pressure up to 25 x10 -3 mTorr. The nanowire curvature measured geometrically is correlated with the shift of the main silicon peak obtained in Raman spectroscopy. A mechanistic hypothesis was proposed to explain the bending during plasma activated growth. Additional driving forces related to electrostatic and Van der Waals forces were also discussed. Deduced from a systematic variation of a three-step experimental protocol, the mechanism for bending was associated with asymmetric deposition rate along the outer and inner wall of nanowire. The conditions leading to nanowire branching were also examined using a two-step growth process. Branching morphologies were examined as a function of plasma powers between 1.5 W and 3.5 W. Post-annealing thermal and plasma-assisted treatments in hydrogen were compared to understand the influences in the absence of an external silicon source (otherwise supplied by disilane). Longer and thicker nanowires were associated with longer annealing times due to an Ostwald-like ripening effect. The roles of surface diffusion, gas diffusion, etching and deposition rates were examined.

  4. Wafer bonded epitaxial templates for silicon heterostructures

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

    2008-01-01

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  5. Domain epitaxy for thin film growth

    DOEpatents

    Narayan, Jagdish

    2005-10-18

    A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

  6. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

    NASA Astrophysics Data System (ADS)

    Fafard, S.; York, M. C. A.; Proulx, F.; Valdivia, C. E.; Wilkins, M. M.; Arès, R.; Aimez, V.; Hinzer, K.; Masson, D. P.

    2016-02-01

    Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ˜1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

  7. Axions as hot and cold dark matter

    SciTech Connect

    Jeong, Kwang Sik; Kawasaki, Masahiro; Takahashi, Fuminobu E-mail: kawasaki@icrr.u-tokyo.ac.jp

    2014-02-01

    The presence of a hot dark matter component has been hinted at 3σ by a combination of the results from different cosmological observations. We examine a possibility that pseudo Nambu-Goldstone bosons account for both hot and cold dark matter components. We show that the QCD axions can do the job for the axion decay constant f{sub a}∼wall annihilation. We also investigate the cases of thermal QCD axions, pseudo Nambu-Goldstone bosons coupled to the standard model sector through the Higgs portal, and axions produced by modulus decay.

  8. Fluidized wall for protecting fusion chamber walls

    SciTech Connect

    Maniscalco, J.A.; Meier, W.R.

    1982-08-17

    Apparatus for protecting the inner wall of a fusion chamber from microexplosion debris, x-rays, neutrons, etc. Produced by deuterium-tritium (DT) targets imploded within the fusion chamber. The apparatus utilizes a fluidized wall similar to a waterfall comprising liquid lithium or solid pellets of lithiumceramic, the waterfall forming a blanket to prevent damage of the structural materials of the chamber.

  9. Optical Epitaxial Growth of Gold Nanoparticle Arrays.

    PubMed

    Huang, Ningfeng; Martínez, Luis Javier; Jaquay, Eric; Nakano, Aiichiro; Povinelli, Michelle L

    2015-09-01

    We use an optical analogue of epitaxial growth to assemble gold nanoparticles into 2D arrays. Particles are attracted to a growth template via optical forces and interact through optical binding. Competition between effects determines the final particle arrangements. We use a Monte Carlo model to design a template that favors growth of hexagonal particle arrays. We experimentally demonstrate growth of a highly stable array of 50 gold particles with 200 nm diameter, spaced by 1.1 μm. PMID:26230429

  10. An epitaxial ferroelectric tunnel junction on silicon.

    PubMed

    Li, Zhipeng; Guo, Xiao; Lu, Hui-Bin; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang

    2014-11-12

    Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. PMID:25200550

  11. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  12. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  13. Subcooled Boiling Near a Heated Wall

    SciTech Connect

    T.A. Trabold; C.C. Maneri; P.F. Vassallo; D.M. Considine

    2000-10-27

    Experimental measurements of void fraction, bubble frequency, and velocity are obtained in subcooled R-134a flowing over a heated flat plate near an unheated wall and compared to analytical predictions. The measurements were obtained for a fixed system pressure and mass flow rate (P = 2.4 MPa and w = 106 kg/hr) at various inlet liquid temperatures. During the experiments, electrical power was applied at a constant rate to one side of the test section. The local void fraction data, acquired with a hot-film anemometer probe, showed the existence of a significant peak near the heated wall and a smaller secondary peak near the unheated wall for the larger inlet subcoolings. Local vapor velocity data, taken with the hot-film probe and a laser Doppler velocimeter, showed broad maxima near the centerline between the heated and unheated plates. Significant temperature gradients near the heated wall were observed for large inlet subcooling. Bubble size data, inferred from measurements of void fraction, bubble frequency and vapor velocity, when combined with the measured bubble chord length distributions illustrate the transition from pure three dimensional spherical to two-dimensional planar bubble flow, the latter being initiated when the bubbles fill the gap between the plates. These various two-phase flow measurements were used for development of a multidimensional, four-field calculational method; comparisons of the data to the calculations show reasonable agreement.

  14. Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films

    PubMed Central

    Shin, Y. J.; Jeon, B. C.; Yang, S. M.; Hwang, I.; Cho, M. R.; Sando, D.; Lee, S. R.; Yoon, J.-G.; Noh, T. W.

    2015-01-01

    Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated ‘creep’ motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system’s switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode’s surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance. PMID:26014521

  15. Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films.

    PubMed

    Shin, Y J; Jeon, B C; Yang, S M; Hwang, I; Cho, M R; Sando, D; Lee, S R; Yoon, J-G; Noh, T W

    2015-01-01

    Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated 'creep' motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system's switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode's surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance. PMID:26014521

  16. Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films

    NASA Astrophysics Data System (ADS)

    Liu, Hao-Liang; Brems, Steven; Zeng, Yu-Jia; Temst, Kristiaan; Vantomme, André; Van Haesendonck, Chris

    2016-05-01

    The interplay between magnetocrystalline anisotropy and exchange bias is investigated in CoO/Co bilayer films, which are grown epitaxially on MgO (0 0 1), by magnetization reversal measurements based on the anisotropic magnetoresistance (AMR) effect. While an asymmetric magnetization reversal survives after training for cooling field (CF) along the hard axis, the magnetization reversal becomes symmetric and is dominated in both branches of the hysteresis loop by domain wall motion before and after training for CF along the easy axis. When performing an in-plane hysteresis loop perpendicular to the CF, the hysteresis loop along the easy axis becomes asymmetric: magnetization rotation dominates in the ascending branch, while there is a larger contribution of domain wall motion in the descending branch. Furthermore, the azimuthal angular dependence of the AMR shows two minima after performing a perpendicular hysteresis loop, instead of only one minimum after training. Relying on the extended Fulcomer and Charap model, these effects can be related to an increased deviation of the average uncompensated antiferromagnetic magnetization from the CF direction. This model provides a consistent interpretation of training and asymmetry of the magnetization reversal for epitaxial films with pronounced magnetocrystalline anisotropy as well as for the previously investigated polycrystalline films.

  17. Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films.

    PubMed

    Liu, Hao-Liang; Brems, Steven; Zeng, Yu-Jia; Temst, Kristiaan; Vantomme, André; Van Haesendonck, Chris

    2016-05-18

    The interplay between magnetocrystalline anisotropy and exchange bias is investigated in CoO/Co bilayer films, which are grown epitaxially on MgO (0 0 1), by magnetization reversal measurements based on the anisotropic magnetoresistance (AMR) effect. While an asymmetric magnetization reversal survives after training for cooling field (CF) along the hard axis, the magnetization reversal becomes symmetric and is dominated in both branches of the hysteresis loop by domain wall motion before and after training for CF along the easy axis. When performing an in-plane hysteresis loop perpendicular to the CF, the hysteresis loop along the easy axis becomes asymmetric: magnetization rotation dominates in the ascending branch, while there is a larger contribution of domain wall motion in the descending branch. Furthermore, the azimuthal angular dependence of the AMR shows two minima after performing a perpendicular hysteresis loop, instead of only one minimum after training. Relying on the extended Fulcomer and Charap model, these effects can be related to an increased deviation of the average uncompensated antiferromagnetic magnetization from the CF direction. This model provides a consistent interpretation of training and asymmetry of the magnetization reversal for epitaxial films with pronounced magnetocrystalline anisotropy as well as for the previously investigated polycrystalline films. PMID:27092595

  18. Optical Spin-Transfer-Torque-Driven Domain-Wall Motion in a Ferromagnetic Semiconductor

    NASA Astrophysics Data System (ADS)

    Ramsay, A. J.; Roy, P. E.; Haigh, J. A.; Otxoa, R. M.; Irvine, A. C.; Janda, T.; Campion, R. P.; Gallagher, B. L.; Wunderlich, J.

    2015-02-01

    We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. First, photocarrier spin exerts a spin-transfer torque on the magnetization via the exchange interaction. The direction of the domain-wall motion can be controlled using the helicity of the laser. Second, the domain wall is attracted to the hot spot generated by the focused laser. Unlike magnetic-field-driven domain-wall depinning, these mechanisms directly drive domain-wall motion, providing an optical tweezerlike ability to position and locally probe domain walls.

  19. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  20. Selective epitaxy using the GILD process

    SciTech Connect

    Weiner, K.H.

    1990-12-31

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge{sub x}Si{sub 1-x} grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  1. Selective epitaxy using the gild process

    DOEpatents

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  2. Electron holography of devices with epitaxial layers

    SciTech Connect

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0} = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge} = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  3. Near-wall turbulence alteration through thin streamwise riblets

    NASA Technical Reports Server (NTRS)

    Wilkinson, Stephen P.; Lazos, Barry S.

    1987-01-01

    The possibility of improving the level of drag reduction associated with near-wall riblets is considered. The methodology involves the use of a hot-wire anemometer to study various surface geometries on small, easily constructed models. These models consist of small, adjacent rectangular channels on the wall aligned in the streamwise direction. The VITA technique is modified and applied to thin-element-array and smooth flat-plate data and the results are indicated schematically.

  4. Turbulent flame-wall interaction: a DNS study

    SciTech Connect

    Chen, Jackie; Hawkes, Evatt R; Sankaran, Ramanan; Gruber, Andrea

    2010-01-01

    A turbulent flame-wall interaction (FWI) configuration is studied using three-dimensional direct numerical simulation (DNS) and detailed chemical kinetics. The simulations are used to investigate the effects of the wall turbulent boundary layer (i) on the structure of a hydrogen-air premixed flame, (ii) on its near-wall propagation characteristics and (iii) on the spatial and temporal patterns of the convective wall heat flux. Results show that the local flame thickness and propagation speed vary between the core flow and the boundary layer, resulting in a regime change from flamelet near the channel centreline to a thickened flame at the wall. This finding has strong implications for the modelling of turbulent combustion using Reynolds-averaged Navier-Stokes or large-eddy simulation techniques. Moreover, the DNS results suggest that the near-wall coherent turbulent structures play an important role on the convective wall heat transfer by pushing the hot reactive zone towards the cold solid surface. At the wall, exothermic radical recombination reactions become important, and are responsible for approximately 70% of the overall heat release rate at the wall. Spectral analysis of the convective wall heat flux provides an unambiguous picture of its spatial and temporal patterns, previously unobserved, that is directly related to the spatial and temporal characteristic scalings of the coherent near-wall turbulent structures.

  5. Enhanced heat transfer rocket combustor technology component hot-fire test results

    NASA Technical Reports Server (NTRS)

    Brown, William S.

    1990-01-01

    The evaluation of a method for enhancing combustor hot-gas wall heat extraction by using hot-fire tests of a rocket engine combustor calorimeter with hot-gas wall ribs is presented. The capability for enhanced heat extraction is required to increase available turbine drive energy for high chamber pressure operation, and therefore higher overall expander cycle engine performance. Determination of the rib effectiveness for incorporation into the design of a high-performance combustor for an advanced expander cycle combustor intended for use in an orbital transfer vehicle or advanced space engine, was the objective of these tests.

  6. Halogenation of microcapsule walls

    NASA Technical Reports Server (NTRS)

    Davis, T. R.; Schaab, C. K.; Scott, J. C.

    1972-01-01

    Procedure for halogenation of confining walls of both gelatin and gelatin-phenolic resin capsules is similar to that used for microencapsulation. Ten percent halogen content renders capsule wall nonburning; any higher content enhances flame-retardant properties of selected internal phase material. Halogenation decreases permeability of wall material to encapsulated materials.

  7. The Lamportian cell wall

    SciTech Connect

    Keiliszewski, M.; Lamport, D. )

    1991-05-01

    The Lamportian Warp-Weft hypothesis suggests a cellulose-extensin interpenetrating network where extensin mechanically couples the load-bearing cellulose microfibrils in a wall matrix that is best described as a microcomposite. This model is based on data gathered from the extensin-rich walls of tomato and sycamore cell suspension culture, wherein extensin precursors are insolubilized into the wall by undefined crosslinks. The authors recent work with cell walls isolated from intact tissue as well as walls from suspension cultured cells of the graminaceous monocots maize and rice, the non-graminaceous monocot asparagus, the primitive herbaceous dicot sugar beet, and the gymnosperm Douglas Fir indicate that although extensins are ubiquitous to all plant species examined, they are not the major structural protein component of most walls examined. Amino acid analyses of intact and HF-treated walls shows a major component neither an HRGP, nor directly comparable to the glycine-rich wall proteins such as those associated with seed coat walls or the 67 mole% glycine-rich proteins cloned from petunia and soybean. Clearly, structural wall protein alternatives to extensin exist and any cell wall model must take that into account. If we assume that extracellular matrices are a priori network structures, then new Hypless' structural proteins in the maize cell wall raise questions about the sort of network these proteins create: the kinds of crosslinks involved; how they are formed; and the roles played by the small amounts of HRGPs.

  8. IR Hot Wave

    SciTech Connect

    Graham, T. B.

    2010-04-01

    The IR Hot Wave{trademark} furnace is a breakthrough heat treatment system for manufacturing metal components. Near-infrared (IR) radiant energy combines with IR convective heating for heat treating. Heat treatment is an essential process in the manufacture of most components. The controlled heating and cooling of a metal or metal alloy alters its physical, mechanical, and sometimes chemical properties without changing the object's shape. The IR Hot Wave{trademark} furnace offers the simplest, quickest, most efficient, and cost-effective heat treatment option for metals and metal alloys. Compared with other heat treatment alternatives, the IR Hot Wave{trademark} system: (1) is 3 to 15 times faster; (2) is 2 to 3 times more energy efficient; (3) is 20% to 50% more cost-effective; (4) has a {+-}1 C thermal profile compared to a {+-}10 C thermal profile for conventional gas furnaces; and (5) has a 25% to 50% smaller footprint.

  9. Hot Oil Removes Wax

    NASA Technical Reports Server (NTRS)

    Herzstock, James J.

    1991-01-01

    Mineral oil heated to temperature of 250 degrees F (121 degrees C) found effective in removing wax from workpieces after fabrication. Depending upon size and shape of part to be cleaned of wax, part immersed in tank of hot oil, and/or interior of part flushed with hot oil. Pump, fittings, and ancillary tooling built easily for this purpose. After cleaning, innocuous oil residue washed off part by alkaline aqueous degreasing process. Serves as relatively safe alternative to carcinogenic and environmentally hazardous solvent perchloroethylene.

  10. Fluidized wall for protecting fusion chamber walls

    SciTech Connect

    Maniscalco, James A.; Meier, Wayne R.

    1982-01-01

    Apparatus for protecting the inner wall of a fusion chamber from microexplosion debris, x-rays, neutrons, etc. produced by deuterium-tritium (DT) targets imploded within the fusion chamber. The apparatus utilizes a fluidized wall similar to a waterfall comprising liquid lithium or solid pellets of lithium-ceramic, the waterfall forming a blanket to prevent damage of the structural materials of the chamber.

  11. Wall of fundamental constants

    SciTech Connect

    Olive, Keith A.; Peloso, Marco; Uzan, Jean-Philippe

    2011-02-15

    We consider the signatures of a domain wall produced in the spontaneous symmetry breaking involving a dilatonlike scalar field coupled to electromagnetism. Domains on either side of the wall exhibit slight differences in their respective values of the fine-structure constant, {alpha}. If such a wall is present within our Hubble volume, absorption spectra at large redshifts may or may not provide a variation in {alpha} relative to the terrestrial value, depending on our relative position with respect to the wall. This wall could resolve the contradiction between claims of a variation of {alpha} based on Keck/Hires data and of the constancy of {alpha} based on Very Large Telescope data. We derive the properties of the wall and the parameters of the underlying microscopic model required to reproduce the possible spatial variation of {alpha}. We discuss the constraints on the existence of the low-energy domain wall and describe its observational implications concerning the variation of the fundamental constants.

  12. Hydrothermal epitaxy of perovskite thin films

    NASA Astrophysics Data System (ADS)

    Chien, Allen T.

    1998-12-01

    This work details the discovery and study of a new process for the growth of epitaxial single crystal thin films which we call hydrothermal epitaxy. Hydrothermal epitaxy is a low temperature solution route for producing heteroepitaxial thin films through the use of solution chemistry and structurally similar substrates. The application of this synthesis route has led to the growth of a variety of epitaxial perovskite (BaTiOsb3, SrTiOsb3, and Pb(Zr,Ti)Osb3 (PZT)) thin films which provides a simple processing pathway for the formation of other materials of technological interest. BaTiOsb3 and PZT heteroepitaxial thin films and powders were produced by the hydrothermal method at 90-200sp°C using various alkali bases. XRD and TEM analysis shows that, in each case, the films and powders form epitaxially with a composition nearly identical to that of the starting precursors. Sequential growth experiments show that film formation initiates by the nucleation of submicron faceted islands at the step edges of the SrTiOsb3 substrates followed by coalescence after longer growth periods. A Ba-rich interfacial layer between the BaTiOsb3 islands and the SrTiOsb3 surface is seen by cross-section TEM during early growth periods. Electrophoretic and Basp{2+} adsorption data provide a chemical basis for the existence of the interfacial layer. Homoepitaxial growth of SrTiOsb3 on SrTiOsb3 also occurs by island growth, suggesting that the growth mode may be a consequence of the aqueous surface chemistry inherent in the process. Film formation is shown to be affected by any number of factors including type of base, pH, temperature, and substrate pretreatments. Different cation bases (Na-, K-, Rb-, Cs-, TMA-OH) demonstrated pronounced changes in powder and film morphology. For example, smaller cation bases (e.g., NaOH, KOH and RbOH) resulted the formation of 1.5 mum \\{100\\} faceted perovskite PbTiOsb3 blocks while larger cation bases (e.g., CsOH and TMA-OH) produced 500 nm sized

  13. Wall conditioning in JT-60

    NASA Astrophysics Data System (ADS)

    Arai, T.; Yamamoto, M.; Akino, N.; Kodama, K.; Nakamura, H.; Niikura, S.; Takatsu, H.; Shimizu, M.; Ohkubo, M.; Ohta, M.; JT-60 Team

    1987-02-01

    The vacuum vessel of JT-60 has a volume of 160 m 3 and a vacuum side surface of 2750 m 2 containing the surfaces of the first wall and many types of ports. The first wall is made of 20 μm TiC coated molybdenum and Inconel 625, bolted to the inner surface of the vacuum vessel. The vacuum vessel is evacuated with four identical pumping systems with a total pumping speed of 29 m 3/s for hydrogen. The wall conditioning procedure consisted of two wipes with special cloths wetted by freon after hot water and freon jet cleaning, and three bakeouts were carried out before the first plasma production. An ultimate pressure of 7.4 × 10 -7 Pa and an outgassing rate of 6.8 × 10 -10 Pa m 3/s m 2 were obtained. Low current pulse discharge cleaning (TDC) was carried out for two weeks at a vacuum vessel temperature of 200°C. The TDC is performed typically with a plasma current of 30 kA, a pulse duration of 40 ms, a repetition period in the range from 0.3 s to 1.2 s, a hydrogen pressure of 5.0 × 10 -3 Pa, and a toroidal field of 0.45 T. The TDC conditioning for 50 h removed a quantity of water vapor corresponding to approximately 0.3 g. The main residual gases consisting of hydrocarbons, were monitored in addition to hydrogen and carbon monoxide.

  14. 13. View of interior, north wall featuring fume hood, facing ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    13. View of interior, north wall featuring fume hood, facing north (Note: B/W scale on fume hood is in 1/2 ft increments) - Nevada Test Site, Reactor Maintenance & Disassembly Complex, Junior Hot Cell, Jackass Flats, Area 25, South of intersection of Roads F & G, Mercury, Nye County, NV

  15. Extrusion of small-diameter, thin-wall tungsten tubing

    NASA Technical Reports Server (NTRS)

    Blankenship, C. P.; Gyorgak, C. A.

    1967-01-01

    Small-diameter, thin-wall seamless tubing of tungsten has been fabricated in lengths of up to 10 feet by hot extrusion over a floating mandrel. Extrusion of 0.50-inch-diameter tubing over 0.4-inch-diameter mandrels was accomplished at temperatures ranging from 3000 degrees to 4000 degrees F.

  16. Silver plating technique seals leaks in thin wall tubing joints

    NASA Technical Reports Server (NTRS)

    Blenderman, W. H.

    1966-01-01

    Leaks in thin wall tubing joints are sealed by cleaning and silver plating the hot gas side of the joint in the leakage area. The pressure differential across the silver during hydrostatic test and subsequent use forces the ductile silver into the leak area and seals it.

  17. Zen Hot Dog Molecules

    ERIC Educational Resources Information Center

    Ryan, Dennis

    2009-01-01

    Substituted cycloalkanes with one branch illustrating each topic in an instructional unit can serve as summaries or reviews in courses of organic chemistry. The hungry Zen master told the hot dog vendor to make him one with everything. You can do the same for your students.

  18. Zen Hot Dog Molecules

    NASA Astrophysics Data System (ADS)

    Ryan, Dennis

    2009-04-01

    Substituted cycloalkanes with one branch illustrating each topic in an instructional unit can serve as summaries or reviews in courses of organic chemistry. The hungry Zen master told the hot dog vendor to make him one with everything. You can do the same for your students.

  19. Hot off the Press

    ERIC Educational Resources Information Center

    Brisco, Nicole D.

    2007-01-01

    In the past, the newspaper was one of the world's most used sources of information. Recently, however, its use has declined due to the popularity of cable television and the Internet. Yet the idea of reading the morning paper with a hot cup of coffee holds many warm memories for children who watched their parents in this daily ritual. In this…

  20. Horseshoe pitchers' hot hands.

    PubMed

    Smith, Gary

    2003-09-01

    Gilovich, Vallone, and Tversky's (1985) analysis of basketball data indicates that a player's chances of making a shot are not affected by the results of earlier shots. However, their basketball data do not control for several confounding influences. An analysis of horseshoe pitching, which does not have these defects, indicates that players do have modest hot and cold spells. PMID:14620374

  1. HOT GAS CLEANUP PROCESS

    EPA Science Inventory

    The report gives results of a study to identify and classify 22 hot gas cleanup (HGC) processes for desulfurizing reducing gases at above 430 C according to absorbent type into groups employing solid, molten salt, and molten metal absorbents. It describes each process in terms of...

  2. What's Hot? What's Not?

    ERIC Educational Resources Information Center

    Buczynski, Sandy

    2006-01-01

    When Goldilocks finds three bowls of porridge at different temperatures in the three bears' house, she accurately assesses the situation and comes up with one of the most recognizable lines in children's literature," This porridge is too hot; this porridge is too cold; aahh, this porridge is just right!" Goldilocks' famous line is a perfect…

  3. Sequential imposed layer epitaxy of cuprate films

    SciTech Connect

    Laguees, M.; Tebbji, H.; Mairet, V.; Hatterer, C.; Beuran, C.F.; Hass, N.; Xu, X.Z. ); Cavellin, C.D. )

    1994-02-01

    Layer-by-layer epitaxy has been used to grow cuprate films since the discovery of high-Tc compounds. This deposition technique is in principle suitable for the growth of layered crystalline structures. However, the sequential deposition of atomic layer by atomic layer of cuprate compounds has presently not been optimized. Nevertheless, this deposition process is the only one which allows one to build artificial cell structures such as Bi[sub 2]Sr[sub 2]Ca[sub (n[minus]1)]Cu[sub n]O[sub y] with n as large as 10. This process will also be the best one to grow films of the so-called infinite layer phase compounds belonging to the Sr[sub 1[minus]x]Ca[sub x]CuO[sub 2] family, in order to improve the transport properties and the morphological properties of the cuprate films. When performed at high substrate temperature (typically more than 600[degree]C), the layer-by-layer epitaxy of cuprates exhibits usually 3D aggregate nucleation. Then the growth of the film no longer obeys the layer-by-layer sequence imposed during the deposition. We present here two experimental situations of true 2D sequential imposed layer epitaxy; the growth at 500[degree]C under atomic oxygen pressure of Bi[sub 2]Sr[sub 2]CuO[sub 6] and of Sr[sub 1[minus]x]Ca[sub y]CuO[sub 2] phases. 20 refs., 2 figs.

  4. Hot seeding using large Y-123 seeds

    NASA Astrophysics Data System (ADS)

    Scruggs, S. J.; Putman, P. T.; Zhou, Y. X.; Fang, H.; Salama, K.

    2006-07-01

    There are several motivations for increasing the diameter of melt textured single domain discs. The maximum magnetic field produced by a trapped field magnet is proportional to the radius of the sample. Furthermore, the availability of trapped field magnets with large diameter could enable their use in applications that have traditionally been considered to require wound electromagnets, such as beam bending magnets for particle accelerators and electric propulsion. We have investigated the possibility of using large area epitaxial growth instead of the conventional point nucleation growth mechanism. This process involves the use of large Y123 seeds for the purpose of increasing the maximum achievable Y123 single domain size. The hot seeding technique using large Y-123 seeds was employed to seed Y-123 samples. Trapped field measurements indicate that single domain samples were indeed grown by this technique. Microstructural evaluation indicates that growth can be characterized by a rapid nucleation followed by the usual peritectic grain growth which occurs when large seeds are used. Critical temperature measurements show that no local Tc suppression occurs in the vicinity of the seed. This work supports the suggestion of using an iterative method for increasing the size of Y-123 single domains that can be grown.

  5. Large area epitaxial germanane for electronic devices

    NASA Astrophysics Data System (ADS)

    Amamou, Walid; Odenthal, Patrick M.; Bushong, Elizabeth J.; O'Hara, Dante J.; Luo, Yunqiu Kelly; van Baren, Jeremiah; Pinchuk, Igor; Wu, Yi; Ahmed, Adam S.; Katoch, Jyoti; Bockrath, Marc W.; Tom, Harry W. K.; Goldberger, Joshua E.; Kawakami, Roland K.

    2015-09-01

    We report the synthesis and transfer of epitaxial germanane (GeH) onto arbitrary substrates by electrochemical delamination and investigate its optoelectronic properties. GeH films with thickness ranging from 1 to 600 nm (2-1000 layers) and areas up to ˜1 cm2 have been reliably transferred and characterized by photoluminescence, x-ray diffraction, and energy-dispersive x-ray spectroscopy. Wavelength dependent photoconductivity measurements on few-layer GeH exhibit an absorption edge and provide a sensitive characterization tool for ultrathin germanane materials. The transfer process also enables the possibility of integrating germanane into vertically stacked heterostructures.

  6. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  7. Epitaxial growth dynamics in gallium arsenide

    NASA Astrophysics Data System (ADS)

    Ballestad, Anders

    The problem of a complete theory describing the far-from-equilibrium statistical mechanics of epitaxial crystal growth remains unsolved. Besides its academic importance, this problem is also interesting from the point of view of device manufacturing. In order to improve on the quality and performance of lateral nanostructures at the lengthscales required by today's technology, a better understanding of the physical mechanisms at play during epitaxial growth and their influence on the evolution of the large-scale morphology is required. In this thesis, we present a study of the morphological evolution of GaAs (001) during molecular beam epitaxy by experimental investigation, theoretical considerations and computational modeling. Experimental observations show that initially rough substrates smooth during growth and annealing towards a steady-state interface roughness, as dictated by kinetic roughening theory. This smoothing indicates that there is no need for a destabilizing step-edge barrier in this material system. In fact, generic surface growth models display a much better agreement with experiments when a weak, negative barrier is used. We also observe that surface features grow laterally, as well as vertically during epitaxy. A growth equation that models smoothing combined with lateral growth is the nonlinear, stochastic Kardar-Parisi-Zhang (KPZ) equation. Simulation fits match the experimentally observed surface morphologies quite well, but we argue that this agreement is coincidental and possibly a result of limited dynamic range in our experimental measurements. In light of these findings, we proceed by developing a coupled growth equations (CGE) model that describes the full morphological evolution of both flat and patterned starting surfaces. The resulting fundamental model consists of two coupled, spatially dependent rate equations that describe the interaction between diffusing adatoms and the surface through physical processes such as adatom diffusion

  8. Local transport measurements on epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Baringhaus, J.; Edler, F.; Neumann, C.; Stampfer, C.; Forti, S.; Starke, U.; Tegenkamp, C.

    2013-09-01

    Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip scanning tunneling and electron microscope (4-tip STM/SEM), the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport measurements. The systematic variation of probe spacings and substrate temperature has clearly revealed two-dimensional transport regimes of Anderson localization as well as of diffusive transport. The detailed analysis of the temperature dependent data demonstrates that the local on-top nano-sized contacts do not induce significant strain to the epitaxial graphene films.

  9. Materials issues in molecular beam epitaxy

    SciTech Connect

    Tsao, J.Y.

    1993-12-31

    The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics. In addition to its numerous device applications, MBE is also an enormously rich and interesting area of materials science in and of itself. This paper, discusses a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, or surfaces.

  10. Perspective: Oxide molecular-beam epitaxy rocks!

    NASA Astrophysics Data System (ADS)

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the "gold standard" synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  11. An experimental study of near wall flow parameters in the blade end-wall corner region

    NASA Technical Reports Server (NTRS)

    Bhargava, Rakesh K.; Raj, Rishi S.

    1989-01-01

    The near wall flow parameters in the blade end-wall corner region is investigated. The blade end-wall corner region was simulated by mounting an airfoil section (NACA 65-015 base profile) symmetric blades on both sides of the flat plate with semi-circular leading edge. The initial 7 cm from the leading edge of the flat plate was roughened by gluing No. 4 floor sanding paper to artificially increase the boundary layer thickness on the flat plate. The initial flow conditions of the boundary layer upstream of the corner region are expected to dictate the behavior of flow inside the corner region. Therefore, an experimental investigation was extended to study the combined effect of initial roughness and increased level of free stream turbulence on the development of a 2-D turbulent boundary layer in the absence of the blade. The measurement techniques employed in the present investigation included, the conventional pitot and pitot-static probes, wall taps, the Preston tube, piezoresistive transducer and the normal sensor hot-wire probe. The pitot and pitot-static probes were used to obtain mean velocity profile measurements within the boundary layer. The measurements of mean surface static pressure were obtained with the surface static tube and the conventional wall tap method. The wall shear vector measurements were made with a specially constructed Preston tube. The flush mounted piezoresistive type pressure transducer were employed to measure the wall pressure fluctuation field. The velocity fluctuation measurements, used in obtaining the wall pressure-velocity correlation data, were made with normal single sensor hot-wire probe. At different streamwise stations, in the blade end-wall corner region, the mean values of surface static pressure varied more on the end-wall surface in the corner region were mainly caused by the changes in the curvature of the streamlines. The magnitude of the wall shear stress in the blade end-wall corner region increased significantly

  12. Liquid Wall Chambers

    SciTech Connect

    Meier, W R

    2011-02-24

    The key feature of liquid wall chambers is the use of a renewable liquid layer to protect chamber structures from target emissions. Two primary options have been proposed and studied: wetted wall chambers and thick liquid wall (TLW) chambers. With wetted wall designs, a thin layer of liquid shields the structural first wall from short ranged target emissions (x-rays, ions and debris) but not neutrons. Various schemes have been proposed to establish and renew the liquid layer between shots including flow-guiding porous fabrics (e.g., Osiris, HIBALL), porous rigid structures (Prometheus) and thin film flows (KOYO). The thin liquid layer can be the tritium breeding material (e.g., flibe, PbLi, or Li) or another liquid metal such as Pb. TLWs use liquid jets injected by stationary or oscillating nozzles to form a neutronically thick layer (typically with an effective thickness of {approx}50 cm) of liquid between the target and first structural wall. In addition to absorbing short ranged emissions, the thick liquid layer degrades the neutron flux and energy reaching the first wall, typically by {approx}10 x x, so that steel walls can survive for the life of the plant ({approx}30-60 yrs). The thick liquid serves as the primary coolant and tritium breeding material (most recent designs use flibe, but the earliest concepts used Li). In essence, the TLW places the fusion blanket inside the first wall instead of behind the first wall.

  13. Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute: Preprint

    SciTech Connect

    Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

    2011-07-01

    We have grown device-quality epitaxial silicon thin films at growth rates up to 1.8 μm/min, using hot-wire chemical vapor deposition from silane at substrate temperatures below 750 degrees C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 ?m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 um epitaxial silicon absorber layer was grown at 700 nm/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

  14. Hot Tub Rash (Pseudomonas Folliculitis)

    MedlinePlus

    ... rash and rashes clinical tools newsletter | contact Share | Hot Tub Rash ( Pseudomonas Folliculitis) Information for adults A ... the skin and small pus-filled lesions. Overview Hot tub rash ( Pseudomonas folliculitis) is an infection of ...

  15. Exercising Safely in Hot Weather

    MedlinePlus

    ... www.nia.nih.gov/Go4Life Exercising Safely in Hot Weather Many people enjoy outdoor activities—walking, gardening, ... older adults and people with health problems. Being hot for too long can cause hyperthermia—a heat- ...

  16. Cell wall integrity

    PubMed Central

    Pogorelko, Gennady; Lionetti, Vincenzo; Bellincampi, Daniela; Zabotina, Olga

    2013-01-01

    The plant cell wall, a dynamic network of polysaccharides and glycoproteins of significant compositional and structural complexity, functions in plant growth, development and stress responses. In recent years, the existence of plant cell wall integrity (CWI) maintenance mechanisms has been demonstrated, but little is known about the signaling pathways involved, or their components. Examination of key mutants has shed light on the relationships between cell wall remodeling and plant cell responses, indicating a central role for the regulatory network that monitors and controls cell wall performance and integrity. In this review, we present a short overview of cell wall composition and discuss post-synthetic cell wall modification as a valuable approach for studying CWI perception and signaling pathways. PMID:23857352

  17. Graphene nanoribbons epitaxy on boron nitride

    NASA Astrophysics Data System (ADS)

    Lu, Xiaobo; Yang, Wei; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Watanabe, Kenji; Taniguchi, Takashi; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

    2016-03-01

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ˜15 nm to ˜150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ˜20 000 cm2 V-1 s-1 for ˜100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ˜15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  18. Polar domain walls trigger magnetoelectric coupling

    PubMed Central

    Fontcuberta, Josep; Skumryev, Vassil; Laukhin, Vladimir; Granados, Xavier; Salje, Ekhard K. H.

    2015-01-01

    Interface physics in oxides heterostructures is pivotal in material’s science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging properties may develop. Here we show that electric tuning of ferroelastic domain walls in SrTiO3 leads to dramatic changes of the magnetic domain structure of a neighboring magnetic layer (La1/2Sr1/2MnO3) epitaxially clamped on a SrTiO3 substrate. We show that the properties of the magnetic layer are intimately connected to the existence of polar regions at twin boundaries of SrTiO3, developing at , that can be electrically modulated. These findings illustrate that by exploiting the responsiveness of DWs nanoregions to external stimuli, even in absence of any domain contribution, prominent and adjustable macroscopic reactions of neighboring layers can be obtained. We conclude that polar DWs, known to exist in other materials, can be used to trigger tunable responses and may lead to new ways for the manipulation of interfacial emerging properties. PMID:26387597

  19. Hot Spring Metagenomics

    PubMed Central

    López-López, Olalla; Cerdán, María Esperanza; González-Siso, María Isabel

    2013-01-01

    Hot springs have been investigated since the XIX century, but isolation and examination of their thermophilic microbial inhabitants did not start until the 1950s. Many thermophilic microorganisms and their viruses have since been discovered, although the real complexity of thermal communities was envisaged when research based on PCR amplification of the 16S rRNA genes arose. Thereafter, the possibility of cloning and sequencing the total environmental DNA, defined as metagenome, and the study of the genes rescued in the metagenomic libraries and assemblies made it possible to gain a more comprehensive understanding of microbial communities—their diversity, structure, the interactions existing between their components, and the factors shaping the nature of these communities. In the last decade, hot springs have been a source of thermophilic enzymes of industrial interest, encouraging further study of the poorly understood diversity of microbial life in these habitats. PMID:25369743

  20. THE HOT CHOCOLATE EFFECT

    SciTech Connect

    Crawford, Frank S.

    1980-12-01

    The "hot chocolate effect" was investigated quantitatively, using water. If a tall glass cylinder is filled nearly completely with water and tapped on the bottom with a softened mallet one can detect the lowest longitudinal mode of the water column, for which the height of the water column is one quarter wavelength. If the cylinder is rapidly filled with hot tap water containing dissolved air the pitch of that mode may descend by nearly three octaves during the first few seconds as the air comes out of solution and forms bubbles. Then the pitch gradually rises as the bubbles float to the top. A simple theoretical expression for the pitch ratio is derived and compared with experiment. The agreement is good to within the ten percent accuracy of the experiments.

  1. Hot chocolate effect

    SciTech Connect

    Crawford, F.S.

    1982-05-01

    The ''hot chocolate effect'' was investigated quantitatively, using water. If a tall glass cylinder is filled nearly completely with water and tapped on the bottom with a softened mallet one can detect the lowest longitudinal mode of the water column, for which the height of the water column is one-quarter wavelength. If the cylinder is rapidly filled with hot tap water containing dissolved air the pitch of that mode may descend by nearly three octaves during the first few seconds as the air comes out of solution and forms bubbles. Then the pitch gradually rises as the bubbles float to the top. A simple theoretical expression for the pitch ratio is derived and compared with experiment. The agreement is good to within the 10% accuracy of the experiments.

  2. Hot Billet Surface Qualifier

    SciTech Connect

    Tzyy-Shuh Chang

    2007-04-30

    OG Technologies, Inc. (OGT), developed a prototype of a Hot Billet Surface Qualifier (“Qualifier”) based on OGT’s patented HotEye™ technology and other proprietary imaging and computing technologies. The Qualifier demonstrated its ability of imaging the cast billets in line with high definition pictures, pictures capable of supporting the detection of surface anomalies on the billets. The detection will add the ability to simplify the subsequent process and to correct the surface quality issues in a much more timely and efficient manner. This is challenging due to the continuous casting environment, in which corrosive water, temperature, vibration, humidity, EMI and other unbearable factors exist. Each installation has the potential of 249,000 MMBTU in energy savings per year. This represents a cost reduction, reduced emissions, reduced water usage and reduced mill scale.

  3. Session: Hot Dry Rock

    SciTech Connect

    Tennyson, George P. Jr.; Duchane, David V.; Ponden, Raymond F.; Brown, Donald W.

    1992-01-01

    This session at the Geothermal Energy Program Review X: Geothermal Energy and the Utility Market consisted of four presentations: ''Hot Dry Rock - Summary'' by George P. Tennyson, Jr.; ''HDR Opportunities and Challenges Beyond the Long Term Flow Test'' by David V. Duchane; ''Start-Up Operations at the Fenton Hill HDR Pilot Plant'' by Raymond F. Ponden; and ''Update on the Long-Term Flow Testing Program'' by Donald W. Brown.

  4. The ''hot'' patella

    SciTech Connect

    Kipper, M.S.; Alazraki, N.P.; Feiglin, D.H.

    1982-01-01

    Increased patellar uptake on bone scans is seen quite commonly but the possible or probable etiologies of this finding have not been previously well described. A review of 100 consecutive bone scans showed that the incidence of bilateral ''hot'' patellae is 15%. Identified etiologies include osteoarthritic degenerative disease (35%), fracture, possible metastatic disease, bursitis, Paget's disease, and osteomyelitis. The value of careful history, physical examination, and radiographs is stressed.

  5. Phase-field simulation of domain structures in epitaxial BiFeO3 films on vicinal substrates

    NASA Astrophysics Data System (ADS)

    Winchester, B.; Wu, P.; Chen, L. Q.

    2011-08-01

    The ferroelectric domain structures of epitaxial BiFeO3 thin films on miscut substrates were studied using a phase-field model. The effects of substrate vicinality towards (100) are considered by assuming charge-compensated surface and film/substrate interface. The predicted domain structures show remarkable agreement with existing experimental observations, including domain wall orientations and local topological domain configurations. The roles of elastic, electric, and gradient energies on the domain structures were analyzed. It is shown that the substrate strain anisotropy due to the miscut largely determines the domain variant selection and domain configurations.

  6. Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

    NASA Technical Reports Server (NTRS)

    Skuza, J. R.; Clavero, C.; Yang, K.; Wincheski, B.; Lukaszew, R. A.

    2009-01-01

    L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

  7. Hot electron spin attenuation lengths of bcc Fe34Co66—Room temperature Magnetocurrent of 1200%

    NASA Astrophysics Data System (ADS)

    Heindl, E.; Kefes, C.; Soda, M.; Vancea, J.; Back, C. H.

    2009-11-01

    We investigate spin-dependent hot electron transport through metallic epitaxial spin valves by ballistic electron magnetic microscopy (BEMM). By variation of the thickness of one of the ferromagnetic layers we determine the spin dependent attenuation lengths which reflect hot electron transport along the vicinity of the [1 0 0]-axis of the bcc Fe34Co66 lattice. The majority spin attenuation length is more than 6 times larger than that of the minority spins within the measured energy interval of 1.3 up to 2 eV above the Fermi level. Consequently a Magnetocurrent effect exceeding 1200% accompanied by a monotonic bias voltage behavior is observed at room temperature.

  8. Advances in Hot-Structure Development

    NASA Technical Reports Server (NTRS)

    Rivers, H. Kevin; Glass, David E.

    2006-01-01

    The National Aeronautics and Space Administration has actively participated in the development of hot structures technology for application to hypersonic flight systems. Hot structures have been developed for vehicles including the X-43A, X-37, and the Space Shuttle. These trans-atmospheric and atmospheric entry flight systems that incorporate hot-structures technology are lighter weight and require less maintenance than those that incorporate parasitic, thermal-protection materials that attach to warm or cool substructure. The development of hot structures requires a thorough understanding of material performance in an extreme environment, boundary conditions and load interactions, structural joint performance, and thermal and mechanical performance of integrated structural systems that operate at temperatures ranging from 1500 C to 3000 C, depending on the application. This paper will present recent advances in the development of hot structures, including development of environmentally durable, high temperature leading edges and control surfaces, integrated thermal protection systems, and repair technologies. The X-43A Mach-10 vehicle utilized carbon/carbon (C/C) leading edges on the nose, horizontal control surface, and vertical tail. The nose and vertical and horizontal tail leading edges were fabricated out of a 3:1 biased, high thermal conductivity C/C. The leading edges were coated with a three-layer coating comprised of a SiC conversion of the C/C, followed by a CVD layer of SiC, followed by a thin CVD layer of HfC. Work has also been performed on the development of an integrated structure and was focused on both hot and warm (insulated) structures and integrated fuselage/tank/TPS systems. The objective was to develop integrated multifunctional airframe structures that eliminate fragile external thermal-protection systems and incorporate the insulating function within the structure. The approach taken to achieve this goal was to develop candidate hypersonic

  9. Epitaxial growth of fcc Cr on Au(100)

    SciTech Connect

    Durbin, S.M.; Berman, L.E.; Batterman, B.W.; Brodsky, M.B.; Hamaker, H.C.

    1988-04-15

    Synchrotron x-ray diffraction and anomalous dispersion measurements of 25A Cr layers epitaxially grown on (100) Au surfaces indicate the presence of fcc Cr domains, while extended x-ray absorption fine-structure spectra are consistent with the usual bcc phase of Cr. Together these data suggest that the fcc phase is a major fraction of the larger epitaxial Cr domains, but that most Cr atoms are in a bcc environment with much smaller domain sizes. This unusual, epitaxially stabilized fcc Cr structure may be related to previously reported low-temperature resistance anomalies.

  10. Epitaxial EuO thin films on GaAs

    SciTech Connect

    Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K.; Mack, S.; Awschalom, D. D.

    2010-09-13

    We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

  11. Point defect balance in epitaxial GaSb

    SciTech Connect

    Segercrantz, N. Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-08-25

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  12. PREFACE: Hot Quarks 2004

    NASA Astrophysics Data System (ADS)

    Antinori, Federico; Bass, Steffen A.; Bellwied, Rene; Ullrich, Thomas; Velkovska, Julia; Wiedemann, Urs

    2005-04-01

    Why another conference devoted to ultra-relativistic heavy-ion physics? As we looked around the landscape of the existing international conferences and workshops, we realized that there was not a single one tailored to the people who are most directly involved with the actual research work: students, post-docs, and junior faculty/research scientists. Of course there are schools, but that was not what we had in mind. We wanted a meeting where young researchers could come together to discuss in depth the physics that they are working on without any hindrance. The major conferences have very limited time for discussions which is often shared amongst the most established. This leaves little room for young people to ask their questions and to get the detailed feedback which they deserve and which satisfies their curiosity. A discussion-driven workshop, centering on those without whom there will be no future—that seemed like what was needed. And thus the Hot Quarks workshop was born. The aim of Hot Quarks was to enhance the direct exchange of scientific information among the younger members of the community, from both experiment and theory. Participation was by invitation only in order to emphasize the contributions from junior researchers. This approach makes the workshop unique among the many forums in the field. For young scientists it represented an opportunity for exposure that they would not have had in one of the major conferences. The hope is that this meeting has helped to stimulate the next generation of scientists in our field and, at the same time, strengthened their sense of community. It all came together from 18 24 July 2004, when the 77 participants met at The Inn at Snakedance in the Taos Ski Valley, New Mexico, USA, for the first Hot Quarks workshop. Photograph Participants gather in the sunshine at the foot of the Taos Ski Valley chairlift. By all accounts, Hot Quarks 2004 was a great success. Every participant had the opportunity to present her or

  13. Multifunctional epitaxial systems on silicon substrates

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Prater, John Thomas; Narayan, Jagdish

    2016-09-01

    Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO3, SrTiO3 (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called "domain matching epitaxy," is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%-25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation "smart" devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a

  14. Wall Finishes; Carpentry: 901895.

    ERIC Educational Resources Information Center

    Dade County Public Schools, Miami, FL.

    The course outline is designed to provide instruction in selecting, preparing, and installing wall finishing materials. Prerequisites for the course include mastery of building construction plans, foundations and walls, and basic mathematics. Intended for use in grades 11 and 12, the course contains five blocks of study totaling 135 hours of…

  15. Thin Wall Iron Castings

    SciTech Connect

    J.F. Cuttino; D.M. Stefanescu; T.S. Piwonka

    2001-10-31

    Results of an investigation made to develop methods of making iron castings having wall thicknesses as small as 2.5 mm in green sand molds are presented. It was found that thin wall ductile and compacted graphite iron castings can be made and have properties consistent with heavier castings. Green sand molding variables that affect casting dimensions were also identified.

  16. 'Stucco' Walls-2

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This image, taken by the microscopic imager, an instrument located on the Mars Exploration Rover Opportunity 's instrument deployment device, or 'arm,' shows the partial 'clodding' or cementation of the sand-sized grains within the trench wall. The area in this image measures approximately 3 centimeters (1.2 inches) across and makes up half of the projected 'Stucco Walls' image.

  17. Interactive Word Walls

    ERIC Educational Resources Information Center

    Jackson, Julie; Narvaez, Rose

    2013-01-01

    It is common to see word walls displaying the vocabulary that students have learned in class. Word walls serve as visual scaffolds and are a classroom strategy used to reinforce reading and language arts instruction. Research shows a strong relationship between student word knowledge and academic achievement (Stahl and Fairbanks 1986). As a…

  18. Domain wall filters

    SciTech Connect

    Baer, Oliver; Narayanan, Rajamani; Neuberger, Herbert; Witzel, Oliver

    2007-03-15

    We propose using the extra dimension separating the domain walls carrying lattice quarks of opposite handedness to gradually filter out the ultraviolet fluctuations of the gauge fields that are felt by the fermionic excitations living in the bulk. This generalization of the homogeneous domain wall construction has some theoretical features that seem nontrivial.

  19. Low energy dislocation structures in epitaxy

    NASA Technical Reports Server (NTRS)

    Van Der Merwe, Jan H.; Woltersdorf, J.; Jesser, W. A.

    1986-01-01

    The principle of minimum energy was applied to epitaxial interfaces to show the interrelationship beteen misfit, overgrowth thickness and misfit dislocation spacing. The low energy dislocation configurations were presented for selected interfacial geometries. A review of the interfacial energy calculations was made and a critical assessment of the agreement between theory and experiment was presented. Modes of misfit accommodation were presented with emphasis on the distinction between kinetic effects and equilibrium conditions. Two-dimensional and three-dimensional overgrowths were treated together with interdiffusion-modified interfaces, and several models of interfacial structure were treated including the classical and the current models. The paper is concluded by indicating areas of needed investigation into interfacial structure.

  20. Transport properties of epitaxial lift off films

    NASA Technical Reports Server (NTRS)

    Mena, R. A.; Schacham, S. E.; Young, P. G.; Haugland, E. J.; Alterovitz, S. A.

    1993-01-01

    Transport properties of epitaxially lifted-off (ELO) films were characterized using conductivity, Hall, and Shubnikov-de Haas measurements. A 10-15 percent increase in the 2D electron gas concentration was observed in these films as compared with adjacent conventional samples. We believe this result to be caused by a backgating effect produced by a charge build up at the interface of the ELO film and the quartz substrate. This increase results in a substantial decrease in the quantum lifetime in the ELO samples, by 17-30 percent, but without a degradation in carrier mobility. Under persistent photoconductivity, only one subband was populated in the conventional structure, while in the ELO films the population of the second subband was clearly visible. However, the increase of the second subband concentration with increasing excitation is substantially smaller than anticipated due to screening of the backgating effect.

  1. Mechanistic study of organometallic vapor phase epitaxy

    SciTech Connect

    Stringfellow, G.B.

    1990-12-31

    Only AsH{sub 3} and PH{sub 3} have been used as the group V source molecules for organometallic vapor phase epitaxy (OMVPE) of III/V semiconductors until recently, since they have been the only precursors yielding device quality materials. This paper reviews recent work on the pyrolysis of individual organometallic molecules, with emphasis on the group V sources, including: (1) the methylarsines, di- and tri-methylarsine, (2) the ethylarsines, mono-, di-, and tri-ethylarsine, and (3) the singly substituted tertiarybutyl arsine and phosphine molecules. The pyrolysis and growth reactions occurring when both group III and group V precursors are present simultaneously, i.e., the reactions occuring during OMVPE growth of several III/V semiconductors, are also briefly reviewed.

  2. Mechanistic study of organometallic vapor phase epitaxy

    SciTech Connect

    Stringfellow, G.B.

    1990-01-01

    Only AsH{sub 3} and PH{sub 3} have been used as the group V source molecules for organometallic vapor phase epitaxy (OMVPE) of III/V semiconductors until recently, since they have been the only precursors yielding device quality materials. This paper reviews recent work on the pyrolysis of individual organometallic molecules, with emphasis on the group V sources, including: (1) the methylarsines, di- and tri-methylarsine, (2) the ethylarsines, mono-, di-, and tri-ethylarsine, and (3) the singly substituted tertiarybutyl arsine and phosphine molecules. The pyrolysis and growth reactions occurring when both group III and group V precursors are present simultaneously, i.e., the reactions occuring during OMVPE growth of several III/V semiconductors, are also briefly reviewed.

  3. Shaping metal nanocrystals through epitaxial seeded growth

    SciTech Connect

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  4. Magnetic properties of novel epitaxial films

    SciTech Connect

    Bader, S.D.; Moog, E.R.

    1986-09-01

    The surface magneto-optic Kerr effect (SMOKE) is used to explore the magnetism of ultra-thin Fe Films extending into the monolayer regime. Both bcc ..cap alpha..-Fe and fcc ..gamma..-Fe single-crystalline, multilayer films are prepared on the bulk-terminated (1 x 1) structures of Au(100) and Cu(100), respectively. The characterizations of epitaxy and growth mode are performed using low energy electron diffraction and Auger electron spectroscopy. Monolayer-range Fe/Au(100) is ferromagnetic with a lower Curie temperature than bulk ..cap alpha..-Fe. The controversial ..gamma..-Fe/Cu(100) system exhibits a striking, metastable, surface magnetic phase at temperatures above room temperature, but does not exhibit bulk ferromagnetism.

  5. Strain effect on ferroelectric polarization of epitaxial LuFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Ahn, Yoonho; Jang, Joonkyung; Son, Jong Yeog

    2016-05-01

    Epitaxial LuFeO3(LFO) thin films were deposited on La0.5Sr0.5MnO3(LSMO)/LaAlO3(LAO) substrates by pulsed laser deposition method. The LFO thin film with a thickness of 100 nm exhibited tetragonally strained structure on the LSMO/LAO substrate, in which the film showed c/ a ratio of 1.045 based on X-ray diffraction experiment. The LFO thin film had a remnant polarization of about 15.2 μC/cm2, which was higher than the previously reported values. By using piezoresponse force microscopy study, it was confirmed that the LFO thin films had mosaic ferroelectric domain structure and that their domain wall energy was estimated to be lower than that of PbTiO3 thin films.

  6. Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

    NASA Astrophysics Data System (ADS)

    Kim, Sang-Woo; Park, Hyun-Kyu; Yi, Min-Su; Park, Nae-Man; Park, Jong-Hyurk; Kim, Sang-Hyeob; Maeng, Sung-Lyul; Choi, Chel-Jong; Moon, Seung-Eon

    2007-01-01

    Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaN /c-Al2O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140nm and an average height of about 2μm were grown on a self-formed ZnO thin film during the growth on the GaN /c-Al2O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.

  7. Transient hot-film sensor response in a shock tube

    NASA Technical Reports Server (NTRS)

    Roberts, A. S., Jr.; Ortgies, K. R.; Gartenberg, E.

    1989-01-01

    Shock tube experiments were performed to determine the response of a hot-film sensor, mounted flush on the side wall of a shock tube, to unsteady flow behind a normal shock wave. The present experiments attempt to isolate the response of the anemometer due only to the change in convective heat transfer at the hot-film surface. The experiments, performed at low supersonic shock speeds in air, are described along with the data acquisition procedure. The change in convective heat transfer is deduced from the data and the results are compared with those from transient boundary layer theory and another set of experimental results. Finally, a transient local heat transfer coefficient is formulated for use as the forcing function in a hot-film sensor instrument model simulation.

  8. High frequency conductivity of hot electrons in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Amekpewu, M.; Mensah, S. Y.; Musah, R.; Mensah, N. G.; Abukari, S. S.; Dompreh, K. A.

    2016-05-01

    High frequency conductivity of hot electrons in undoped single walled achiral Carbon Nanotubes (CNTs) under the influence of ac-dc driven fields was considered. We investigated semi-classically Boltzmann's transport equation with and without the presence of the hot electrons' source by deriving the current densities in CNTs. Plots of the normalized current density versus frequency of ac-field revealed an increase in both the minimum and maximum peaks of normalized current density at lower frequencies as a result of a strong injection of hot electrons. The applied ac-field plays a twofold role of suppressing the space-charge instability in CNTs and simultaneously pumping an energy for lower frequency generation and amplification of THz radiations. These have enormous promising applications in very different areas of science and technology.

  9. Radioactive hot-cell access-hole decontamination machine

    SciTech Connect

    Not Available

    1981-04-06

    A radioactive hot cell access hole decontamination machine is disclosed. A mobile housing has an opening large enough to encircle the access hole and has a shielding door, with a door opening and closing mechanism, for uncovering and covering the opening. The housing contains a shaft which has an apparatus for rotating the shaft and a device for independently translating the shaft from the housing through the opening and access hole into the hot cell chamber. A properly sized cylindrical pig containing wire brushes and cloth or other disks, with an arrangement for releasably attaching it to the end of the shaft, circumferentially cleans the access hole wall of radioactive contamination and thereafter detaches from the shaft to fall into the hot cell chamber.

  10. Transient regimes and crossover for epitaxial surfaces.

    PubMed

    Haselwandter, Christoph A; Vvedensky, Dimitri D

    2010-02-01

    We apply a formalism for deriving stochastic continuum equations associated with lattice models to obtain equations governing the transient regimes of epitaxial growth for various experimental scenarios and growth conditions. The first step of our methodology is the systematic transformation of the lattice model into a regularized stochastic equation of motion that provides initial conditions for differential renormalization-group (RG) equations for the coefficients in the regularized equation. The solutions of the RG equations then yield trajectories that describe the original model from the transient regimes, which are of primary experimental interest, to the eventual crossover to the asymptotically stable fixed point. We first consider regimes defined by the relative magnitude of deposition noise and diffusion noise. If the diffusion noise dominates, then the early stages of growth are described by the Mullins-Herring (MH) equation with conservative noise. This is the classic regime of molecular-beam epitaxy. If the diffusion and deposition noise are of comparable magnitude, the transient equation is the MH equation with nonconservative noise. This behavior has been observed in a recent report on the growth of aluminum on silicone oil surfaces [Z.-N. Fang, Thin Solid Films 517, 3408 (2009)]. Finally, the regime where deposition noise dominates over diffusion noise has been observed in computer simulations, but does not appear to have any direct experimental relevance. For initial conditions that consist of a flat surface, the Villain-Lai-Das Sarma (VLDS) equation with nonconservative noise is not appropriate for any transient regime. If, however, the initial surface is corrugated, the relative magnitudes of terms can be altered to the point where the VLDS equation with conservative noise does indeed describe transient growth. This is consistent with the experimental analysis of growth on patterned surfaces [H.-C. Kan, Phys. Rev. Lett. 92, 146101 (2004); T

  11. Twenty years of molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, A. Y.

    1995-05-01

    The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

  12. Critical issues of complex, epitaxial oxide growth and integration with silicon by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lettieri, James

    Molecular beam epitaxy was used to grow epitaxial oxides on silicon substrates. The growth of BaO, SrO, EuO, and SrTiO3 are discussed with a focus on the general theme of integration of functional, epitaxial oxides into a silicon environment. Oxidation studies of various metal systems relevant for oxide on silicon epitaxy and integration are reported. Results demonstrate the catalytic nature of an alkaline earth metal at small concentrations to enable the oxidation of the poorly oxidizing metals at pressures lower than during deposition of the pure metal alone. Results from the deposition of various elements are presented. The aspects of the growth of alkaline earth oxides on silicon are explained. The transition from the silicon to the alkaline earth oxide as described through reflection high energy electron diffraction (RHEED) is presented and used to understand issues related to each stage of the growth. High quality, commensurate alkaline earth oxides are grown on silicon at room temperature and P O2 background ˜ 3 x 10-8 Torr. The growth of alkaline earth and rare earth oxide solid solutions and rare earth oxides (EuO) are described. The first reported epitaxial EuO on silicon is reported, enabled by the use of a thin buffer layer (13 A) of SrO. Using a strategy of transition from simple structures to the more complex, the growth of a perovskite (SrTiO3) on silicon is demonstrated. Growth of a structurally optimized perovskite structure entails the transformation of a thin interfacial alkaline earth oxide layer into the initial perovskite cells. SrTiO3 and La-doped SrTiO3 on silicon are used to integrate a piezoelectric relevant for microelectromechanical systems (MEMS) applications and a ferroelectric relevant for a ferroelectric random access memory (FRAM) architecture. A d33 value of over 400 pm/V under bias is measured for the piezoelectric (Pb(Mn1/3Nb 2/3)O3 -PbTiO3) and a remanent polarization of 25 muC/cm2 and fatigue free behavior (>1012 cycles) for a

  13. Hot oiling spreadsheet

    SciTech Connect

    Mansure, A.J.

    1996-09-01

    One of the most common oil-field treatments is hot oiling to remove paraffin from wells. Even though the practice is common, the thermal effectiveness of the process is not commonly understood. In order for producers to easily understand the thermodynamics of hot oiling, a simple tool is needed for estimating downhole temperatures. Such a tool has been developed that was distributed as a compiled, public-domain-software spreadsheet. That spreadsheet has evolved into an interactive from on the World Wide Web and has been adapted into a Windows{trademark} program by Petrolite, St. Louis MO. The development of such a tools was facilitated by expressing downhole temperatures in terms of analytic formulas. Considerable algebraic work is required to develop such formulas. Also, the data describing hot oiling is customarily a mixture of practical units that must be converted to a consistent set of units. To facilitate the algebraic manipulations and to assure unit conversions are correct, during development parallel calculations were made using the spreadsheet and a symbolic mathematics program. Derivation of the formulas considered falling film flow in the annulus and started from the transient differential equations so that the effects of the heat capacity of the tubing and casing could be included. While this approach to developing a software product does not have the power and sophistication of a finite element or difference code, it produces a user friendly product that implements the equations solved with a minimum potential for bugs. This allows emphasis in development of the product to be placed on the physics.

  14. 5. Detail of bin wall, showing the thinner exterior wall ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. Detail of bin wall, showing the thinner exterior wall next to the inner wall with its alternating courses of channel tile and hollow tile. - Saint Anthony Elevator No. 3, 620 Malcom Avenue, Southeast, Minneapolis, Hennepin County, MN

  15. 22. SIDE WALL CONSTRUCTION, NORTH TRAINING WALL, LOOKING WEST FROM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    22. SIDE WALL CONSTRUCTION, NORTH TRAINING WALL, LOOKING WEST FROM THE SAME POINT AS VIEW NO. 21. - Oakland Harbor Training Walls, Mouth of Federal Channel to Inner Harbor, Oakland, Alameda County, CA

  16. Hot Subluminous Stars

    NASA Astrophysics Data System (ADS)

    Heber, U.

    2016-08-01

    Hot subluminous stars of spectral type B and O are core helium-burning stars at the blue end of the horizontal branch or have evolved even beyond that stage. Most hot subdwarf stars are chemically highly peculiar and provide a laboratory to study diffusion processes that cause these anomalies. The most obvious anomaly lies with helium, which may be a trace element in the atmosphere of some stars (sdB, sdO) while it may be the dominant species in others (He-sdB, He-sdO). Strikingly, the distribution in the Hertzsprung–Russell diagram of He-rich versus He-poor hot subdwarf stars of the globular clusters ω Cen and NGC 2808 differ from that of their field counterparts. The metal-abundance patterns of hot subdwarfs are typically characterized by strong deficiencies of some lighter elements as well as large enrichments of heavy elements. A large fraction of sdB stars are found in close binaries with white dwarf or very low-mass main sequence companions, which must have gone through a common-envelope (CE) phase of evolution. Because the binaries are detached they provide a clean-cut laboratory to study this important but yet poorly understood phase of stellar evolution. Hot subdwarf binaries with sufficiently massive white dwarf companions are viable candidate progenitors of type Ia supernovae both in the double degenerate as well as in the single degenerate scenario as helium donors for double detonation supernovae. The hyper-velocity He-sdO star US 708 may be the surviving donor of such a double detonation supernova. Substellar companions to sdB stars have also been found. For HW Vir systems the companion mass distribution extends from the stellar into the brown dwarf regime. A giant planet to the acoustic-mode pulsator V391 Peg was the first discovery of a planet that survived the red giant evolution of its host star. Evidence for Earth-size planets to two pulsating sdB stars have been reported and circumbinary giant planets or brown dwarfs have been found around HW

  17. Hot cell examination table

    DOEpatents

    Gaal, Peter S.; Ebejer, Lino P.; Kareis, James H.; Schlegel, Gary L.

    1991-01-01

    A table for use in a hot cell or similar controlled environment for use in examining specimens. The table has a movable table top that can be moved relative to a table frame. A shaft is fixedly mounted to the frame for axial rotation. A shaft traveler having a plurality of tilted rollers biased against the shaft is connected to the table top such that rotation of the shaft causes the shaft traveler to roll along the shaft. An electromagnetic drive is connected to the shaft and the frame for controllably rotating the shaft.

  18. Hot air drum evaporator

    DOEpatents

    Black, Roger L.

    1981-01-01

    An evaporation system for aqueous radioactive waste uses standard 30 and 55 gallon drums. Waste solutions form cascading water sprays as they pass over a number of trays arranged in a vertical stack within a drum. Hot dry air is circulated radially of the drum through the water sprays thereby removing water vapor. The system is encased in concrete to prevent exposure to radioactivity. The use of standard 30 and 55 gallon drums permits an inexpensive compact modular design that is readily disposable, thus eliminating maintenance and radiation build-up problems encountered with conventional evaporation systems.

  19. MSFC hot air collectors

    NASA Technical Reports Server (NTRS)

    Anthony, K.

    1978-01-01

    A description of the hot air collector is given that includes a history of development, a history of the materials development, and a program summary. The major portion of the solar energy system cost is the collector. Since the collector is the heart of the system and the most costly subsystem, reducing the cost of producing collectors in large quantities is a major goal. This solar collector is designed to heat air and/or water cheaply and efficiently through the use of solar energy.

  20. Formation Of Ohmic Gold Contacts On Epitaxial GaAs

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, L. Doug; Kaiser, William J.

    1991-01-01

    New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.

  1. Epitaxial CoSi2 on MOS devices

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  2. Epitaxial nickel disilicide with low resistivity and excellent reliability

    NASA Astrophysics Data System (ADS)

    Hsin, Cheng-Lun; Deng, Shiu-Sheng

    2016-02-01

    Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 μΩ cm in the experimental results and up to 14.93 μΩ cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black’s equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics.

  3. Optical properties of epitaxial YAG:Yb films

    NASA Astrophysics Data System (ADS)

    Ubizskii, S. B.; Matkovskii, A. O.; Melnyk, S. S.; Syvorotka, I. M.; Müller, V.; Peters, V.; Petermann, K.; Beyertt, A.; Giesen, A.

    2004-03-01

    This work deals with the investigation of the optical properties of epitaxial YAG:Yb films and their suitability as gain media for thin disk lasers. Epitaxial films of YAG:Yb were grown by the liquid phase epitaxy method in air on the (111)-oriented YAG substrates. The thickness of the grown layers was from 30 to 260 m. The melt composition was varied to obtain the desired doping level from 10 to 15% and to optimize the optical properties. The best epitaxial films were colourless and had an Yb3+ luminescence lifetime of more than 950 s, which is very close to the intrinsic lifetime of the Yb ions in the bulk YAG single crystals. These films were tested in a thin disk laser setup with 24 absorption passes of the 940 nm pumping beam. The maximum output power at 1.03 m wavelength in CW operation reached more than 60 W and the optical efficiency was close to 30%.

  4. Epitaxy of GaN Nanowires on Graphene.

    PubMed

    Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali; Glas, Frank; Zhang, Hezhi; Oehler, Fabrice; Cavanna, Antonella; Babichev, Andrey; Travers, Laurent; Gogneau, Noelle; Tchernycheva, Maria; Harmand, Jean-Christophe

    2016-08-10

    Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures. PMID:27414518

  5. Epitaxial growth of Si deposited on (100) Si

    NASA Astrophysics Data System (ADS)

    Hung, L. S.; Lau, S. S.; von Allmen, M.; Mayer, J. W.; Ullrich, B. M.; Baker, J. E.; Williams, P.; Tseng, W. F.

    1980-11-01

    Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer-by-layer growth occurred at rates comparable to those in self-ion-implanted-amorphous Si. There is no evidence for appreciable oxygen penetration into the deposited layer during storage in air. The critical factors in achieving epitaxial growth are fast (˜50 Å/sec) deposition of Si onto a surface cleaned with a HF dip as a last rinse before loading into the vacuum system. Channeling and transmission electron microscopy measurements indicated that the epitaxial layers are essentially defect free. Secondary-ion mass spectroscopic analysis showed about 1014 oxygen/cm2 at the amorphous/crystal interface. With either higher interfacial oxygen coverage or slow (˜2 Å/sec) deposition, epitaxial growth rates are significantly slower.

  6. Coincident-site lattice matching during van der Waals epitaxy

    PubMed Central

    Boschker, Jos E.; Galves, Lauren A.; Flissikowski, Timur; Lopes, Joao Marcelo J.; Riechert, Henning; Calarco, Raffaella

    2015-01-01

    Van der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb2Te3 films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6√3 × 6√3)R30° buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D) bonded materials. It is shown that the Sb2Te3 /graphene interface is stable and that coincidence lattices are formed between the epilayers and substrate that depend on the size of the surface unit cell. This demonstrates that there is a significant, although relatively weak, interfacial interaction between the two materials. Lattice matching is thus relevant for vdW epitaxy with two 2D bonded materials and a fundamental design parameter for vdW heterostructures. PMID:26658715

  7. Improved process for epitaxial deposition of silicon on prediffused substrates

    NASA Technical Reports Server (NTRS)

    Clarke, M. G.; Halsor, J. L.; Word, J. C.

    1968-01-01

    Process for fabricating integrated circuits uniformly deposits silicon epitaxially on prediffused substrates without affecting the sublayer diffusion pattern. Two silicon deposits from different sources, and deposited at different temperatures, protect the sublayer pattern from the silicon tetrachloride reaction.

  8. Growth of epitaxial thin films by pulsed laser ablation

    SciTech Connect

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)

  9. Growth of epitaxial thin films by pulsed laser ablation

    SciTech Connect

    Lowndes, D.H.

    1992-10-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)

  10. Swimming Near the Wall

    NASA Astrophysics Data System (ADS)

    Quinn, Daniel; Moored, Keith; Dewey, Peter; Lauder, George; Smits, Alexander

    2012-11-01

    The aerodynamic loads on rectangular panels undergoing heave and pitch oscillations near a solid wall were measured using a 6-axis ATI sensor. Over a range of Strouhal numbers, reduced frequencies and flexibilities, swimming near the wall was found to increase thrust and therefore the self-propelled swimming speed. Experimental particle image velocimetry revealed an asymmetric wake structure with a momentum jet angled away from the wall. Both the thrust amplification and the asymmetric wake structure were verified and investigated further using an in-house inviscid panel method code. Supported by ONR MURI Grant N00014-08-1-0642.

  11. FDNS code to predict wall heat fluxes or wall temperatures in rocket nozzles

    NASA Technical Reports Server (NTRS)

    Karr, Gerald R.

    1993-01-01

    This report summarizes the findings on the NASA contract NAG8-212, Task No. 3. The overall project consists of three tasks, all of which have been successfully completed. In addition, some supporting supplemental work, not required by the contract, has been performed and is documented herein. Task 1 involved the modification of the wall functions in the code FDNS to use a Reynolds Analogy-based method. Task 2 involved the verification of the code against experimentally available data. The data chosen for comparison was from an experiment involving the injection of helium from a wall jet. Results obtained in completing this task also show the sensitivity of the FDNS code to unknown conditions at the injection slot. Task 3 required computation of the flow of hot exhaust gases through the P&W 40K subscale nozzle. Computations were performed both with and without film coolant injection. The FDNS program tends to overpredict heat fluxes, but, with suitable modeling of backside cooling, may give reasonable wall temperature predictions. For film cooling in the P&W 40K calorimeter subscale nozzle, the average wall temperature is reduced from 1750 R to about 1050 R by the film cooling. The average wall heat flux is reduced by a factor of three.

  12. Hot Subluminous Stars

    NASA Astrophysics Data System (ADS)

    Heber, U.

    2016-08-01

    Hot subluminous stars of spectral type B and O are core helium-burning stars at the blue end of the horizontal branch or have evolved even beyond that stage. Most hot subdwarf stars are chemically highly peculiar and provide a laboratory to study diffusion processes that cause these anomalies. The most obvious anomaly lies with helium, which may be a trace element in the atmosphere of some stars (sdB, sdO) while it may be the dominant species in others (He-sdB, He-sdO). Strikingly, the distribution in the Hertzsprung–Russell diagram of He-rich versus He-poor hot subdwarf stars of the globular clusters ω Cen and NGC 2808 differ from that of their field counterparts. The metal-abundance patterns of hot subdwarfs are typically characterized by strong deficiencies of some lighter elements as well as large enrichments of heavy elements. A large fraction of sdB stars are found in close binaries with white dwarf or very low-mass main sequence companions, which must have gone through a common-envelope (CE) phase of evolution. Because the binaries are detached they provide a clean-cut laboratory to study this important but yet poorly understood phase of stellar evolution. Hot subdwarf binaries with sufficiently massive white dwarf companions are viable candidate progenitors of type Ia supernovae both in the double degenerate as well as in the single degenerate scenario as helium donors for double detonation supernovae. The hyper-velocity He-sdO star US 708 may be the surviving donor of such a double detonation supernova. Substellar companions to sdB stars have also been found. For HW Vir systems the companion mass distribution extends from the stellar into the brown dwarf regime. A giant planet to the acoustic-mode pulsator V391 Peg was the first discovery of a planet that survived the red giant evolution of its host star. Evidence for Earth-size planets to two pulsating sdB stars have been reported and circumbinary giant planets or brown dwarfs have been found around HW

  13. Radiations from hot nuclei

    NASA Technical Reports Server (NTRS)

    Malik, F. Bary

    1993-01-01

    The investigation indicates that nuclei with excitation energy of a few hundred MeV to BeV are more likely to radiate hot nuclear clusters than neutrons. These daughter clusters could, furthermore, de-excite emitting other hot nuclei, and the chain continues until these nuclei cool off sufficiently to evaporate primarily neutrons. A few GeV excited nuclei could radiate elementary particles preferentially over neutrons. Impact of space radiation with materials (for example, spacecraft) produces highly excited nuclei which cool down emitting electromagnetic and particle radiations. At a few MeV excitation energy, neutron emission becomes more dominant than gamma-ray emission and one often attributes the cooling to take place by successive neutron decay. However, a recent experiment studying the cooling process of 396 MeV excited Hg-190 casts some doubt on this thinking, and the purpose of this investigation is to explore the possibility of other types of nuclear emission which might out-compete with neutron evaporation.

  14. Epitaxial patterning of thin-films: conventional lithographies and beyond

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Krishnan, Kannan M.

    2014-09-01

    Thin-film based novel magnetic and electronic devices have entered a new era in which the film crystallography, structural coherence, and epitaxy play important roles in determining their functional properties. The capabilities of controlling such structural and functional properties are being continuously developed by various physical deposition technologies. Epitaxial patterning strategies further allow the miniaturization of such novel devices, which incorporates thin-film components into nanoscale architectures while keeping their functional properties unmodified from their ideal single-crystal values. In the past decade, epitaxial patterning methods on the laboratory scale have been reported to meet distinct scientific inquires, in which the techniques and processes used differ from one to the other. In this review we summarize many of these pioneering endeavors in epitaxial patterning of thin-film devices that use both conventional and novel lithography techniques. These methods demonstrate epitaxial patterning for a broad range of materials (metals, oxides, and semiconductors) and cover common device length scales from micrometer to sub-hundred nanometer. Whilst we have been motivated by magnetic materials and devices, we present our outlook on developing systematic-strategies for epitaxial patterning of functional materials which will pave the road for the design, discovery and industrialization of next-generation advanced magnetic and electronic nano-devices.

  15. Hot, Dry and Cloudy

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Click on the image for movie of Hot, Dry and Cloudy

    This artist's concept shows a cloudy Jupiter-like planet that orbits very close to its fiery hot star. NASA's Spitzer Space Telescope was recently used to capture spectra, or molecular fingerprints, of two 'hot Jupiter' worlds like the one depicted here. This is the first time a spectrum has ever been obtained for an exoplanet, or a planet beyond our solar system.

    The ground-breaking observations were made with Spitzer's spectrograph, which pries apart infrared light into its basic wavelengths, revealing the 'fingerprints' of molecules imprinted inside. Spitzer studied two planets, HD 209458b and HD 189733b, both of which were found, surprisingly, to have no water in the tops of their atmospheres. The results suggest that the hot planets are socked in with dry, high clouds, which are obscuring water that lies underneath. In addition, HD209458b showed hints of silicates, suggesting that the high clouds on that planet contain very fine sand-like particles.

    Capturing the spectra from the two hot-Jupiter planets was no easy feat. The planets cannot be distinguished from their stars and instead appear to telescopes as single blurs of light. One way to get around this is through what is known as the secondary eclipse technique. In this method, changes in the total light from a so-called transiting planet system are measured as a planet is eclipsed by its star, vanishing from our Earthly point of view. The dip in observed light can then be attributed to the planet alone.

    This technique, first used by Spitzer in 2005 to directly detect the light from an exoplanet, currently only works at infrared wavelengths, where the differences in brightness between the planet and star are less, and the planet's light is easier to pick out. For example, if the experiment had been done in visible light, the total light from the system would appear to be unchanged

  16. A&M. TAN607 third floor plan for hot shop. Crane control ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607 third floor plan for hot shop. Crane control rooms and their shielding windows. Plenum. Wall rack for manipulators in hot shop. Ralph M. Parsons 902-3-ANP-607-A 103. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-00-693-106755 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  17. Anterior vaginal wall repair

    MedlinePlus

    Lentz GM. Anatomic defects of the abdominal wall and pelvic floor: abdominal and inguinal hernias, cystocele, urethrocele, ... uterine and vaginal prolapse: diagnosis and management. In: Lentz GM, Lobo RA, Gershenson DM, Katz VL, eds. ...

  18. Anterior vaginal wall repair

    MedlinePlus

    ... Cystocele Anterior vaginal wall repair (surgical treatment of urinary incontinence) - series References Lentz GM. Anatomic defects of the ... 72. Read More Anterior Inflatable artificial sphincter Stress urinary incontinence Urinary catheters Urinary incontinence - injectable implant Urinary incontinence - ...

  19. Oscillons and domain walls

    SciTech Connect

    Hindmarsh, Mark; Salmi, Petja

    2008-05-15

    Oscillons, extremely long-lived localized oscillations of a scalar field, are shown to be produced by evolving domain wall networks in {phi}{sup 4} theory in two spatial dimensions. We study the oscillons in frequency space using the classical spectral function at zero momentum, and obtain that the velocity distribution is suppressed as {gamma}{sup -2} at large Lorentz factor {gamma}, with oscillons produced up to at least {gamma}{approx}10. This leads us to speculate that oscillons are produced at cusps, regions of the domain wall travelling near the speed of light. In order to gain some insight onto the dilute oscillon 'gas' produced by the domain walls, we prepare a denser gas by filling the simulation volume with oscillons boosted in random directions. We finish the study by revisiting collisions between oscillons and between an oscillon and a domain wall, showing that in the latter case they can pass straight through with minimal distortion.

  20. Opportunity at the Wall

    NASA Technical Reports Server (NTRS)

    2004-01-01

    The navigation camera on NASA's Mars Exploration Rover Opportunity took images during the rover's 285th martian day (Nov. 11, 2004) that are combined into this panorama. Opportunity had reached the base of 'Burns Cliff,' a portion of the inner wall of 'Endurance Crater.' This view shows rock layers in the wall, with a portion of Opportunity's solar array visible at the bottom right.

  1. Enabling Technologies for Ceramic Hot Section Components

    SciTech Connect

    Venkat Vedula; Tania Bhatia

    2009-04-30

    Silicon-based ceramics are attractive materials for use in gas turbine engine hot sections due to their high temperature mechanical and physical properties as well as lower density than metals. The advantages of utilizing ceramic hot section components include weight reduction, and improved efficiency as well as enhanced power output and lower emissions as a result of reducing or eliminating cooling. Potential gas turbine ceramic components for industrial, commercial and/or military high temperature turbine applications include combustor liners, vanes, rotors, and shrouds. These components require materials that can withstand high temperatures and pressures for long duration under steam-rich environments. For Navy applications, ceramic hot section components have the potential to increase the operation range. The amount of weight reduced by utilizing a lighter gas turbine can be used to increase fuel storage capacity while a more efficient gas turbine consumes less fuel. Both improvements enable a longer operation range for Navy ships and aircraft. Ceramic hot section components will also be beneficial to the Navy's Growth Joint Strike Fighter (JSF) and VAATE (Versatile Affordable Advanced Turbine Engines) initiatives in terms of reduced weight, cooling air savings, and capability/cost index (CCI). For DOE applications, ceramic hot section components provide an avenue to achieve low emissions while improving efficiency. Combustors made of ceramic material can withstand higher wall temperatures and require less cooling air. Ability of the ceramics to withstand high temperatures enables novel combustor designs that have reduced NO{sub x}, smoke and CO levels. In the turbine section, ceramic vanes and blades do not require sophisticated cooling schemes currently used for metal components. The saved cooling air could be used to further improve efficiency and power output. The objectives of this contract were to develop technologies critical for ceramic hot section

  2. Conducting Wall Hall Thrusters

    NASA Technical Reports Server (NTRS)

    Goebel, Dan M.; Hofer, Richard R.; Mikellides, Ioannis G.; Katz, Ira; Polk, James E.; Dotson, Brandon

    2013-01-01

    A unique configuration of the magnetic field near the wall of Hall thrusters, called Magnetic Shielding, has recently demonstrated the ability to significantly reduce the erosion of the boron nitride (BN) walls and extend the life of Hall thrusters by orders of magnitude. The ability of magnetic shielding to minimize interactions between the plasma and the discharge chamber walls has for the first time enabled the replacement of insulating walls with conducting materials without loss in thruster performance. The boron nitride rings in the 6 kW H6 Hall thruster were replaced with graphite that self-biased to near the anode potential. The thruster efficiency remained over 60% (within two percent of the baseline BN configuration) with a small decrease in thrust and increase in Isp typical of magnetically shielded Hall thrusters. The graphite wall temperatures decreased significantly compared to both shielded and unshielded BN configurations, leading to the potential for higher power operation. Eliminating ceramic walls makes it simpler and less expensive to fabricate a thruster to survive launch loads, and the graphite discharge chamber radiates more efficiently which increases the power capability of the thruster compared to conventional Hall thruster designs.

  3. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  4. Method and tank for producing hot briquettes

    SciTech Connect

    Birscheidt, H.; Brasseur, Y.; Dungs, H.; Ferdinand, F.; Weber, H.

    1981-02-03

    A method for producing hot briquettes, for example, for use in blast furnaces, and using a briquetting material of non-caking components, such as low temperature coke from bituminous coal and/or lignite, coke dust and/or oil coke and caking fat coal at temperatures between 430* C. And 540* C. is described. The briquetting material is delivered to a briquetting press to form briquette blanks, tempering and degassing the blanks, by delivering the blanks into individual chambers in a closed system of several chambers having gas communication with each other so that there is partly changing amounts of gas generated in the individual chambers. The briquette blanks are formed into tempered briquettes. An overpressure is applied to the chambers to conduct the gases away from the chamber with one and the same overpressure. The equipment for the execution of the method comprises a hardening system in the form of a single cube-shaped tank having one corner which is inclined downwardly and which is divided into several substantially parallel narrow chambers by walls which are disposed parallel to the inclined outer surface and which has a channel above an upper lateral edge for charging hot briquettes into the individual chambers and also for conducting away gases formed during tempering in a path diagonally opposite to the charging channel. An emptying channel is located under the lower lateral edge of the tank.

  5. Renormalization of stochastic lattice models: epitaxial surfaces.

    PubMed

    Haselwandter, Christoph A; Vvedensky, Dimitri D

    2008-06-01

    We present the application of a method [C. A. Haselwandter and D. D. Vvedensky, Phys. Rev. E 76, 041115 (2007)] for deriving stochastic partial differential equations from atomistic processes to the morphological evolution of epitaxial surfaces driven by the deposition of new material. Although formally identical to the one-dimensional (1D) systems considered previously, our methodology presents substantial additional technical issues when applied to two-dimensional (2D) surfaces. Once these are addressed, subsequent coarse-graining is accomplished as before by calculating renormalization-group (RG) trajectories from initial conditions determined by the regularized atomistic models. Our applications are to the Edwards-Wilkinson (EW) model [S. F. Edwards and D. R. Wilkinson, Proc. R. Soc. London, Ser. A 381, 17 (1982)], the Wolf-Villain (WV) model [D. E. Wolf and J. Villain, Europhys. Lett. 13, 389 (1990)], and a model with concurrent random deposition and surface diffusion. With our rules for the EW model no appreciable crossover is obtained for either 1D or 2D substrates. For the 1D WV model, discussed previously, our analysis reproduces the crossover sequence known from kinetic Monte Carlo (KMC) simulations, but for the 2D WV model, we find a transition from smooth to unstable growth under repeated coarse-graining. Concurrent surface diffusion does not change this behavior, but can lead to extended transient regimes with kinetic roughening. This provides an explanation of recent experiments on Ge(001) with the intriguing conclusion that the same relaxation mechanism responsible for ordered structures during the early stages of growth also produces an instability at longer times that leads to epitaxial breakdown. The RG trajectories calculated for concurrent random deposition and surface diffusion reproduce the crossover sequences observed with KMC simulations for all values of the model parameters, and asymptotically always approach the fixed point corresponding

  6. Renormalization of stochastic lattice models: Epitaxial surfaces

    NASA Astrophysics Data System (ADS)

    Haselwandter, Christoph A.; Vvedensky, Dimitri D.

    2008-06-01

    We present the application of a method [C. A. Haselwandter and D. D. Vvedensky, Phys. Rev. E 76, 041115 (2007)] for deriving stochastic partial differential equations from atomistic processes to the morphological evolution of epitaxial surfaces driven by the deposition of new material. Although formally identical to the one-dimensional (1D) systems considered previously, our methodology presents substantial additional technical issues when applied to two-dimensional (2D) surfaces. Once these are addressed, subsequent coarse-graining is accomplished as before by calculating renormalization-group (RG) trajectories from initial conditions determined by the regularized atomistic models. Our applications are to the Edwards-Wilkinson (EW) model [S. F. Edwards and D. R. Wilkinson, Proc. R. Soc. London, Ser. A 381, 17 (1982)], the Wolf-Villain (WV) model [D. E. Wolf and J. Villain, Europhys. Lett. 13, 389 (1990)], and a model with concurrent random deposition and surface diffusion. With our rules for the EW model no appreciable crossover is obtained for either 1D or 2D substrates. For the 1D WV model, discussed previously, our analysis reproduces the crossover sequence known from kinetic Monte Carlo (KMC) simulations, but for the 2D WV model, we find a transition from smooth to unstable growth under repeated coarse-graining. Concurrent surface diffusion does not change this behavior, but can lead to extended transient regimes with kinetic roughening. This provides an explanation of recent experiments on Ge(001) with the intriguing conclusion that the same relaxation mechanism responsible for ordered structures during the early stages of growth also produces an instability at longer times that leads to epitaxial breakdown. The RG trajectories calculated for concurrent random deposition and surface diffusion reproduce the crossover sequences observed with KMC simulations for all values of the model parameters, and asymptotically always approach the fixed point corresponding

  7. TRUEX hot demonstration

    SciTech Connect

    Chamberlain, D.B.; Leonard, R.A.; Hoh, J.C.; Gay, E.C.; Kalina, D.G.; Vandegrift, G.F.

    1990-04-01

    In FY 1987, a program was initiated to demonstrate technology for recovering transuranic (TRU) elements from defense wastes. This hot demonstration was to be carried out with solution from the dissolution of irradiated fuels. This recovery would be accomplished with both PUREX and TRUEX solvent extraction processes. Work planned for this program included preparation of a shielded-cell facility for the receipt and storage of spent fuel from commercial power reactors, dissolution of this fuel, operation of a PUREX process to produce specific feeds for the TRUEX process, operation of a TRUEX process to remove residual actinide elements from PUREX process raffinates, and processing and disposal of waste and product streams. This report documents the work completed in planning and starting up this program. It is meant to serve as a guide for anyone planning similar demonstrations of TRUEX or other solvent extraction processing in a shielded-cell facility.

  8. Response of hot nuclei

    SciTech Connect

    Broglia, R.A.

    1986-01-01

    The dipole giant resonance is reviewed, as it is the only vibration which has been experimentally identified in the decay of hot nuclei. The mechanism of exciting the resonance and the mode of the resonance are described. The methods used to calculate the vibrations from the shell model are discussed, including the Hartree-Fock approximation and random phase approximation. Nuclei formed by compound nuclear reactions, which possess high excitation energy and angular momentum, are considered. It is argued that the stability of the dipole may be used to advantage in the study of other properties of nuclei at high excitation. It is also considered possible that the discussion of the dipole giant resonance may be extended to the gamma decay of the isovector quadrupole vibration. 26 refs., 18 figs. (LEW)

  9. Improved engine wall models for Large Eddy Simulation (LES)

    NASA Astrophysics Data System (ADS)

    Plengsaard, Chalearmpol

    Improved wall models for Large Eddy Simulation (LES) are presented in this research. The classical Werner-Wengle (WW) wall shear stress model is used along with near-wall sub-grid scale viscosity. A sub-grid scale turbulent kinetic energy is employed in a model for the eddy viscosity. To gain better heat flux results, a modified classical variable-density wall heat transfer model is also used. Because no experimental wall shear stress results are available in engines, the fully turbulent developed flow in a square duct is chosen to validate the new wall models. The model constants in the new wall models are set to 0.01 and 0.8, respectively and are kept constant throughout the investigation. The resulting time- and spatially-averaged velocity and temperature wall functions from the new wall models match well with the law-of-the-wall experimental data at Re = 50,000. In order to study the effect of hot air impinging walls, jet impingement on a flat plate is also tested with the new wall models. The jet Reynolds number is equal to 21,000 and a fixed jet-to-plate spacing of H/D = 2.0. As predicted by the new wall models, the time-averaged skin friction coefficient agrees well with experimental data, while the computed Nusselt number agrees fairly well when r/D > 2.0. Additionally, the model is validated using experimental data from a Caterpillar engine operated with conventional diesel combustion. Sixteen different operating engine conditions are simulated. The majority of the predicted heat flux results from each thermocouple location follow similar trends when compared with experimental data. The magnitude of peak heat fluxes as predicted by the new wall models is in the range of typical measured values in diesel combustion, while most heat flux results from previous LES wall models are over-predicted. The new wall models generate more accurate predictions and agree better with experimental data.

  10. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    SciTech Connect

    Zhang, Zhi; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Lu, Zhen-Yu; Chen, Ping-Ping; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-12

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  11. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Lu, Zhen-Yu; Chen, Ping-Ping; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-01

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  12. HOT CELL BUILDING, TRA632, INTERIOR. WINDOWED ROOM IS OFFICE; NEXT ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. WINDOWED ROOM IS OFFICE; NEXT DOOR WAS DARKROOM, AND THIRD DOOR LED TO ANOTHER OFFICE. ALL ARE ALONG NORTH WALL OF BUILDING (ETR EXTENSION OF 1958). CAMERA FACES NORTHEAST. PUMICE BLOCK WALLS. INL NEGATIVE NO. HD46-29-1. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  13. CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CP640) LOOKING NORTHWEST ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CP-640) LOOKING NORTHWEST SHOWING FORMING AND PLACEMENT OF REINFORCING STEEL FOR SOUTH WALLS OF CELLS 1, 3, 4 AND 5 AND WEST WALL FOR CELLS 1 AND 2; CONSTRUCTION 13 PERCENT COMPLETE. INL PHOTO NUMBER NRTS 59-6436. J. Anderson, Photographer, 12/18/1959 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  14. A&M. Hot liquid waste treatment building (TAN616). Contextual view, facing ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616). Contextual view, facing south. Wall of hot shop (TAN-607) with high bay at left of view. Lower-roofed building at left edge of view is TAN- 633, hot cell annex. Complex at center of view is TAN-616. Tall metal building with gable roof is TAN-615. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-2-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  15. Current at domain walls, roughly speaking: nanoscales studies of disorder roughening and conduction

    NASA Astrophysics Data System (ADS)

    Paruch, Patrycja

    2013-03-01

    Domain walls in (multi)ferroic materials are the thin elastic interfaces separating regions with different orientations of magnetisation, electric polarisation, or spontaneous strain. Understanding their behaviour, and controlling domain size and stability, is key for their integration into applications, while fundamentally, domain walls provide an excellent model system in which the rich physics of disordered elastic interfaces can be accesses. In addition, domain walls can present novel properties, quite different from those of their parent materials, making them potentially useful as active components in future nano-devices. Here, we present our atomic force microscopy studies of ferroelectric domain walls in epitaxial Pb(Zr0.2Ti0.8)O3 and BiFeO3 thin films, in which we use piezorespose force microscopy to show unusual domain wall roughening behaviour, with very localised disorder regions in the sample leading to a complex, multi-affine scaling of the domain wall shape. We also show the effects of temperature, environmental conditions, and defects on switching dynamics and domain wall roughness. We combine these observations with parallel conductive-tip atomic force microscopy current measurements, which also show highly localised variations in conduction, and highlight the key role played by oxygen vacancies in the observed domain wall conduction.

  16. SOURCE ASSESSMENT: ASPHALT HOT MIX

    EPA Science Inventory

    This report summarizes data on air emissions from the asphalt hot mix industry. A representative asphalt hot mix plant was defined, based on the results of an industrial survey, to assess the severity of emissions from this industry. Source severity was defined as the ratio of th...

  17. Hot hollow cathode gun assembly

    DOEpatents

    Zeren, J.D.

    1983-11-22

    A hot hollow cathode deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, the hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

  18. Numerical Simulations of Hot Vertical Displacement Events

    NASA Astrophysics Data System (ADS)

    Bunkers, K. J.; Sovinec, C. R.

    2015-11-01

    Loss of vertical positioning control in tokamaks leads to instability where hot confined plasma rests against the chamber wall. Resistive-MHD modeling with the NIMROD code is applied to model these events. After divertor-coil current is perturbed, resistive diffusion through the non-ideal wall sets the timescale as the simulated tokamak evolves from a diverted equilibrium to a limited configuration. Results show that plasma outflow along opening magnetic surfaces, just outside the confinement zone, approaches the local ion-acoustic speed. The projection of the plasma flow velocity into the surface-normal direction (n . V) near the surface exceeds the local E × B drift speed; near surfaces n × E is approximately the same as n ×Ewall in the nearly steady conditions. The safety factor of flux surfaces that remain intact is approximately constant over the evolution time, which is much shorter than the plasma resistive diffusion time. Assessment of external-kink stability and initial findings from 3D nonlinear computations are presented. This effort is supported by the U.S. Dept. of Energy, award numbers DE-FG02-06ER54850 and DE-FC02-08ER54975.

  19. Thermal Conductance of Nanoscale VOx Epitaxial Layers

    NASA Astrophysics Data System (ADS)

    Oh, Dong-Wook; Petrov, Ivan; Cahill, David

    2010-03-01

    We use time-domain thermoreflectance to measure the thermal conductance of VOx layers in epitaxial Pt/VOx/Pt structures. In particular, the metal-insulator-transition of VO2 at 70^oC allows us to systematically explore channels for heat transport between metals and correlated-electron systems. Pt/VOx/Pt layers are deposited on a sapphire substrates by reactive DC sputtering with O2 partial pressure varied from 0% to 13%. The thermal conductance has a strong dependence on thickness, 3-50 nm, and oxygen content, pure V to V2O5. The thermal conductance of ˜10 nm thick layers of V in series with the two Pt/V interfaces is 1 GW/m^2-K, comparable to what is expected based on the diffuse-mismatch model for electron transport at interfaces. The conductance of ˜10 nm thick layers of VO2 at room temperatures is remarkably high, 0.5 GW/m^2-K, for the series conductance of two metal-dielectric interfaces. At the metal-insulator-transition, the conductance of VO2 layers increases by only 10%, indicating that electrons in Pt and electrons in metallic VO2 are not strongly coupled.

  20. Thickness-Dependent Hydrophobicity of Epitaxial Graphene.

    PubMed

    Munz, Martin; Giusca, Cristina E; Myers-Ward, Rachael L; Gaskill, D Kurt; Kazakova, Olga

    2015-08-25

    This article addresses the much debated question whether the degree of hydrophobicity of single-layer graphene (1LG) is different from that of double-layer graphene (2LG). Knowledge of the water affinity of graphene and its spatial variations is critically important as it can affect the graphene properties as well as the performance of graphene devices exposed to humidity. By employing chemical force microscopy with a probe rendered hydrophobic by functionalization with octadecyltrichlorosilane (OTS), the adhesion force between the probe and epitaxial graphene on SiC has been measured in deionized water. Owing to the hydrophobic attraction, a larger adhesion force was measured on 2LG Bernal-stacked domains of graphene surfaces, thus showing that 2LG is more hydrophobic than 1LG. Identification of 1LG and 2LG domains was achieved through Kelvin probe force microscopy and Raman spectral mapping. Approximate values of the adhesion force per OTS molecule have been calculated through contact area analysis. Furthermore, the contrast of friction force images measured in contact mode was reversed to the 1LG/2LG adhesion contrast, and its origin was discussed in terms of the likely water depletion over hydrophobic domains as well as deformation in the contact area between the atomic force microscope tip and 1LG. PMID:26218503

  1. Epitaxial SrCoOx oxygen sponge

    NASA Astrophysics Data System (ADS)

    Lee, H. N.; Jeen, H.; Choi, W. S.; Biegalski, M. D.; Shin, D.; Chisholm, M. F.; Folkman, C. M.; Fong, D. D.; Freeland, J. W.; Tung, I.-C.; Ohta, H.

    2014-03-01

    Perovskite-based transition metal oxides have been actively developed as the replacements of noble metal-based electrodes in energy and environmental devices due to their high catalytic activity and ionic conductivity. However, the high thermodynamic barrier and the robust cation's oxidation state have limited the realization of fast catalysis and bulk diffusion at low temperature, which can reduce thermomechanical degradation in such devices. Here, we report a low-temperature reversible redox reaction in SrCoOx grown directly by pulsed laser epitaxy as one of two distinct crystalline phases, either the perovskite SrCoO3-δ or the brownmillerite SrCoO2.5.[2] Based on real-time temperature dependent x-ray diffraction, we found that the distinct valence state in each phase can be reversibly switched at a remarkably reduced temperature (200 ~ 300 °C) in a considerably short time (<1 min) without destroying the parent framework. Therefore, our results on low temperature reversible redox reactions provide valuable insight not only in understanding the structure-physical property relationship in multivalent oxides, but also for developing new strategies to avoid thermomechanical degradation in high temperature electrochemical devices, such as solid oxide fuel cells. The work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

  2. Epitaxial Growth of Two-Dimensional Stanene

    NASA Astrophysics Data System (ADS)

    Jia, Jinfeng

    Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth. Ge-based germanene was realized by mechanical exfoliation. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations, or can support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall (QAH) effect. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene. In cooperation with Fengfeng Zhu, Wei-jiong Chen, Yong Xu, Chun-lei Gao, Dan-dan Guan, Canhua Liu, Dong Qian, Shou-Cheng Zhang.

  3. Epitaxial Overgrowth of Platinum on Palladium Nanocrystals

    SciTech Connect

    Jiang, M.; Zhu, Y.; Lim, B.; Tao, J.; Camargo, P.H.C.; Ma, C.; Xia, Y.

    2010-11-01

    This paper describes a systematic study on the epitaxial overgrowth of Pt on well-defined Pdnanocrystals with different shapes (and exposed facets), including regular octahedrons, truncated octahedrons, and cubes. Two different reducing agents, i.e., citric acid and L-ascorbic acid, were evaluated and compared for the reduction of K{sub 2}PtCl{sub 4} in an aqueous solution in the presence of Pdnanocrystal seeds. When citric acid was used as a reducing agent, conformal overgrowth of octahedral Pt shells on regular and truncated octahedrons of Pd led to the formation of Pd-Pt core-shell octahedrons, while non-conformal overgrowth of Pt on cubic Pd seeds resulted in the formation of an incomplete octahedral Pt shell. On the contrary, localized overgrowth of Pt branches was observed when L-ascorbic acid was used as a reducing agent regardless of the facets expressed on the surface of Pdnanocrystal seeds. This work shows that both the binding affinity of a reducing agent to the Pt surface and the reduction kinetics for a Pt precursor play important roles in determining the mode of Pt overgrowth on Pdnanocrystal surface.

  4. Formation and ordering of epitaxial quantum dots

    NASA Astrophysics Data System (ADS)

    Atkinson, Paola; Schmidt, Oliver G.; Bremner, Stephen P.; Ritchie, David A.

    2008-10-01

    Single quantum dots (QDs) have great potential as building blocks for quantum information processing devices. However, one of the major difficulties in the fabrication of such devices is the placement of a single dot at a pre-determined position in the device structure, for example, in the centre of a photonic cavity. In this article we review some recent investigations in the site-controlled growth of InAs QDs on GaAs by molecular beam epitaxy. The method we use is ex-situ patterning of the GaAs substrate by electron beam lithography and conventional wet or dry etching techniques to form shallow pits in the surface which then determine the nucleation site of an InAs dot. This method is easily scalable and can be incorporated with marker structures to enable simple post-growth lithographic alignment of devices to each site-controlled dot. We demonstrate good site-control for arrays with up to 10 micron spacing between patterned sites, with no dots nucleating between the sites. We discuss the mechanism and the effect of pattern size, InAs deposition amount and growth conditions on this site-control method. Finally we discuss the photoluminescence from these dots and highlight the remaining challenges for this technique. To cite this article: P. Atkinson et al., C. R. Physique 9 (2008).

  5. Magnetic anisotropy of strained epitaxial manganite films

    SciTech Connect

    Demidov, V. V. Borisenko, I. V.; Klimov, A. A.; Ovsyannikov, G. A.; Petrzhik, A. M.; Nikitov, S. A.

    2011-05-15

    The in-plane magnetic anisotropy of epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) films is studied at room temperature by the following three independent techniques: magnetooptical Kerr effect, ferromagnetic resonance at a frequency of 9.61 GHz, and recording of absorption spectra of electromagnetic radiation at a frequency of 290.6 MHz. The films are deposited onto NdGaO{sub 3} (NGO) substrates in which the (110)NGO plane is tilted at an angle of 0-25.7 Degree-Sign to the substrate plane. The uniaxial magnetic anisotropy induced by the strain of the film is found to increase with the tilt angle of the (110)NGO plane. A model is proposed to describe the change in the magnetic anisotropy energy with the tilt angle. A sharp increase in the radio-frequency absorption in a narrow angular range of a dc magnetic field near a hard magnetization axis is detected The anisotropy parameters of the LSMO films grown on (110)NGO, (001)SrTiO{sub 3}, and (001)[(LaAlO{sub 3}){sub 0.3} + (Sr{sub 2}AlTaO{sub 6}){sub 0.7}] substrates are compared.

  6. Proximity induced Superconductivity in Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Natterer, Fabian D.; Ha, Jeonghoon; Baek, Hongwoo; Zhang, Duming; Cullen, William; Zhitenev, Nikolai B.; Kuk, Young; Stroscio, Joseph A.

    The intimate electrical contact of a superconductor with a normal metal leads to an exchange of carriers through their boundary. Cooper pairs leak into the normal metal via Andreev reflection and enable the normal metal to acquire superconducting-like properties. The electron-hole conversion process in graphene is prominent due to relativistic quantum mechanics governing low energy chiral carriers in a multi-valley system. In the present experiment, we reveal spatial measurements of the proximity effect in graphene from a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to the substrate to exposed graphene terraces. Scanning tunneling spectra measured on the graphene terraces show a clear decay of the superconducting gap width with increasing separation from the graphene-aluminum edges. The decay length for the superconducting energy gap extends beyond 400 nm. Subtle deviations in the exponentially decaying energy gap were also observed on a much smaller length scale of tens of nanometers. Funding from SNSF (project 158468), NIST/CNST Grant 70NANB10H193, and KRF-2010-00349.

  7. Supercooling and the Mpemba effect: When hot water freezes quicker than cold

    NASA Astrophysics Data System (ADS)

    Auerbach, David

    1995-10-01

    Temperature measurements taken near vessel walls show that initially hot water may well begin to freeze quicker than cold. This is not, as previously surmised, due to the cooling history of the water (e.g., air expulsion during heating). Rather, supercooling virtually always takes place. On those occasions where the cold water supercools sufficiently more than the hot the Mpemba scenario is the following: The hot water supercools, but only slightly, before spontaneously freezing. Superficially it looks completely frozen. The cold water (in larger volume than that of the hot sample) supercools to a lower local temperature than the hot before it spontaneously freezes. This scenario can occur more often for ambient cooling temperatures between -6 °C and -12 °C.

  8. Measurement of the thermal properties of electrically conducting fluids using coated transient hot wires

    SciTech Connect

    Perkins, R.A.

    1994-12-31

    Measurements of fluid thermal properties using the transient hot-wire technique are described. When bare hot wires are used in electrically conducting fluids there are additional measurement uncertainties due to the formation of electric double layers on the surfaces of the wires and the cell wall. If the electrical conductivity of the fluid is large enough there is also significant power generation in the fluid. These measurement uncertainties can be eliminated by electrically insulating the hot wires with a thin film. The use of tantalum hot wires with an anodized layer of tantalum pentoxide is demonstrated with measurements on nonpolar argon and polar 1,1,1,2 tetrafluoroethane (R134a). Although coated tantalum hot wires have been used previously in a transient mode to measure the thermal conductivity of liquids, this work is the first demonstration of the use of coated wires to measure thermal conductivity in the liquid, vapor, and supercritical gas phases.

  9. Experimental Study of Ignition by Hot Spot in Internal Combustion Engines

    NASA Technical Reports Server (NTRS)

    Serruys, Max

    1938-01-01

    In order to carry out the contemplated study, it was first necessary to provide hot spots in the combustion chamber, which could be measured and whose temperature could be changed. It seemed difficult to realize both conditions working solely on the temperature of the cooling water in a way so as to produce hot spots on the cylinder wall capable of provoking autoignition. Moreover, in the majority of practical cases, autoignition is produced by the spark plug, one of the least cooled parts in the engine. The first procedure therefore did not resemble that which most generally occurs in actual engine operation. All of these considerations caused us to reproduce similar hot spots at the spark plugs. The hot spots produced were of two kinds and designated with the name of thermo-electric spark plug and of metallic hot spot.

  10. Measurement of the thermal properties of electrically conducting fluids using coated transient hot wires

    SciTech Connect

    Perkins, R.A.

    1994-09-01

    Measurements of fluid thermal properties using the transient hot-wire technique are described. When bare hot wires are used in electrically conducting fluids there are additional measurement uncertainties due to the formation of electric double layers on the surfaces of the wires and the cell wall. If the electrical conductivity of the fluid is large enough there is also significant power generation in the fluid. These measurement uncertainties can be eliminated by electrically insulating the hot wires with a thin film. The use of tantalum hot wires with an anodized layer of tantalum pentoxide is demonstrated with measurements on nonpolar argon and polar 1,1,1,2 tetrafluorethane (R134a). Although coated tantalum hot wires have been used previously in a transient mode to measure the thermal conductivity of liquids, this work is the first demonstration of the use of coated wires to measure thermal conductivity in the liquid, vapor, and supercritical gas phases.

  11. Hot Spot Cosmic Accelerators

    NASA Astrophysics Data System (ADS)

    2002-11-01

    length of more than 3 million light-years, or no less than one-and-a-half times the distance from the Milky Way to the Andromeda galaxy, this structure is indeed gigantic. The region where the jets collide with the intergalactic medium are known as " hot spots ". Superposing the intensity contours of the radio emission from the southern "hot spot" on a near-infrared J-band (wavelength 1.25 µm) VLT ISAAC image ("b") shows three distinct emitting areas; they are even better visible on the I-band (0.9 µm) FORS1 image ("c"). This emission is obviously associated with the shock front visible on the radio image. This is one of the first times it has been possible to obtain an optical/near-IR image of synchrotron emission from such an intergalactic shock and, thanks to the sensitivity and image sharpness of the VLT, the most detailed view of its kind so far . The central area (with the strongest emission) is where the plasma jet from the galaxy centre hits the intergalactic medium. The light from the two other "knots", some 10 - 15,000 light-years away from the central "hot spot", is also interpreted as synchrotron emission. However, in view of the large distance, the astronomers are convinced that it must be caused by electrons accelerated in secondary processes at those sites . The new images thus confirm that electrons are being continuously accelerated in these "knots" - hence called "cosmic accelerators" - far from the galaxy and the main jets, and in nearly empty space. The exact physical circumstances of this effect are not well known and will be the subject of further investigations. The present VLT-images of the "hot spots" near 3C 445 may not have the same public appeal as some of those beautiful images that have been produced by the same instruments during the past years. But they are not less valuable - their unusual importance is of a different kind, as they now herald the advent of fundamentally new insights into the mysteries of this class of remote and active

  12. HVDC wall bushing studies

    SciTech Connect

    Schneider, H.M.; Lux, A.E.; Howes, D.R. )

    1990-07-01

    This report describes research conducted to determine the performance of HVDC wall bushings in different wetting conditions. The in-service behavior of these wall bushing on HVDC systems at voltages of {plus minus}450 kV and above is first described to establish the conditions under which flashovers have occurred. Laboratory tests made at the EPRI High Voltage Transmission Research Center confirm that wall bushings may flash over at rated operation voltage under conditions which are intended to be representative of those experienced on operating transmission systems. Methods for improving performance are discussed, and results of tests with several types of mitigation techniques are described. The major emphasis is placed on the application of room temperature vulcanized (RTV) silicone rubber. Clean fog is used to evaluate the characteristics of this material on post insulators. The encouraging performance of the post insulators coated with RTV is the basis for further evaluation on full scale wall bushings tested in nonuniform rain. In addition to tests on RTV coated wall bushings without pre-doposited contamination, attempts at achieving reasonable contamination layers on RV are described. By means of resistance measurements on horizontal insulators, the critical conditions which may lead to flashover on surfaces with different materials and coatings are investigated 15 refs., 39 figs., 11 tabs.

  13. Ultimate Cost of Building Walls.

    ERIC Educational Resources Information Center

    Grimm, Clayford T.; Gross, James G.

    The need for economic analysis of building walls is discussed, and the factors influencing the ultimate cost of exterior walls are studied. The present worth method is used to analyze three types of exterior non-loadbearing panel or curtain walls. Anticipated costs are expressed in terms of their present value per square foot of wall area. The…

  14. Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hyndman, Adam R.; Allen, Martin W.; Reeves, Roger J.

    2014-03-01

    Epitaxial layers of ZnO have been grown on c-plane, (0001) sapphire substrates by plasma assisted molecular beam epitaxy. The oxygen:zinc flux ratio was found to be crucial in obtaining a film with a smooth surface and good crystallinity. When increasing film thickness from ~80 to 220 nm we observed an increase in the streakiness of RHEED images, and XRD revealed a reduction in crystal strain and increase in crystal alignment. A film with surface roughness of 0.5 nm and a XRD rocking curve FWHM of 0.1 for the main ZnO peak (0002) was achieved by depositing a low temperature ZnO buffer layer at 450 °C and then growing for 120 minutes at 700 °C with a Zn-cell temperature of 320 °C and an oxygen partial pressure of 7e-7 Torr. We found novel structures on two samples grown outside of our ideal oxygen:zinc flux ratio. SEM images of a sample believed to have been grown in a Zn-rich environment showed flower like structures up to 150 um in diameter which appear to have formed during growth. Another sample believed to have been deposited in a Zn-deficient environment had rings approximately 1.5 um in diameter scattered on its surface.

  15. Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

    SciTech Connect

    Kamimura, J.; Kishino, K.; Kikuchi, A.

    2015-02-28

    Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

  16. Epitaxial Cd3As2 Thin Films Synthesized by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Schumann, Timo; Goyal, Manik; Stemmer, Susanne

    Cd3As2 is a three-dimensional (3D) Dirac semimetal, i.e. it possesses Dirac cones in a 3D bulk state where the band dispersion relation is linear near the Fermi energy. Cd3As2 is has raised considerable interest due to its high electron mobilities in bulk crystals and for novel quantum phenomena, such as chiral anomalies. However, few studies have been performed using thin films of Cd3As2. In this presentation, we report on the synthesis of Cd3As2 thin films by molecular beam epitaxy (MBE). Single phase, epitaxial films were grown on undoped GaSb(111)B substrates with the (112) facet of Cd3As2 parallel to the GaSb(111) surface. We report on the structural quality and orientation variants in the films. Electrical transport properties indicate electron mobilities exceeding 6000 cm2V-1s-1. We discuss the impact of the MBE growth parameters and substrate preparation on the structural and electrical properties of the films.

  17. Really Hot Stars

    NASA Astrophysics Data System (ADS)

    2003-04-01

    Spectacular VLT Photos Unveil Mysterious Nebulae Summary Quite a few of the most beautiful objects in the Universe are still shrouded in mystery. Even though most of the nebulae of gas and dust in our vicinity are now rather well understood, there are some which continue to puzzle astronomers. This is the case of a small number of unusual nebulae that appear to be the subject of strong heating - in astronomical terminology, they present an amazingly "high degree of excitation". This is because they contain significant amounts of ions, i.e., atoms that have lost one or more of their electrons. Depending on the atoms involved and the number of electrons lost, this process bears witness to the strength of the radiation or to the impact of energetic particles. But what are the sources of that excitation? Could it be energetic stars or perhaps some kind of exotic objects inside these nebulae? How do these peculiar objects fit into the current picture of universal evolution? New observations of a number of such unusual nebulae have recently been obtained with the Very Large Telescope (VLT) at the ESO Paranal Observatory (Chile). In a dedicated search for the origin of their individual characteristics, a team of astronomers - mostly from the Institute of Astrophysics & Geophysics in Liège (Belgium) [1] - have secured the first detailed, highly revealing images of four highly ionized nebulae in the Magellanic Clouds, two small satellite galaxies of our home galaxy, the Milky Way, only a few hundred thousand light-years away. In three nebulae, they succeeded in identifying the sources of energetic radiation and to eludicate their exceptional properties: some of the hottest, most massive stars ever seen, some of which are double. With masses of more than 20 times that of the Sun and surface temperatures above 90 000 degrees, these stars are truly extreme. PR Photo 09a/03: Nebula around the hot star AB7 in the SMC. PR Photo 09b/03: Nebula near the hot Wolf-Rayet star BAT99

  18. OT2_rvisser_2: Hot water in hot cores

    NASA Astrophysics Data System (ADS)

    Visser, R.

    2011-09-01

    As matter flows from the ice-cold envelope onto a forming protostar, it heats up from temperatures of 10 K to more than 100 K. The region where the temperature exceeds 100 K (the hot core or hot corino) is where the molecular envelope connects with both the seedling circumstellar disk and the bipolar outflow. As the envelope contracts from larger scales, a lot of material passes through the hot core before accreting onto the disk. The hot core is therefore a crucial step in establishing the physical and chemical properties of planetary building blocks. However, little is yet known about hot cores. How large and how massive are they? How hot are they? Are they exposed to strong UV or X-ray fluxes? We propose the rotationally excited 3(12)-3(03) line of H2-18O at 1095.6 GHz (E_up = 249 K) as a novel probe into the properties of hot cores. This line was detected as a narrow emission feature (FWHM ~4 km/s) in a deep integration (5 hr) in the Class 0 protostar NGC1333 IRAS2A. Comparing the line intensity to radiative transfer models, we find a tentative H2-16O hot core abundance of 4x10^-6. This is a factor of 50 lower than one would expect from simple evaporation of water ice above 100 K. Why is the hot core of IRAS2A so much "drier" than expected? Is most of the water destroyed by UV photons and/or X-rays? We propose to measure the water abundance in the hot cores of a sample of five additional Class 0 and I protostars by obtaining deep integrations of the 3(12)-3(03) lines of H2-16O and H2-18O. This mini-survey will reveal whether NGC1333 IRAS2A is unique in having a "dry" hot core, or whether "dry" hot cores are a common feature of low-mass embedded protostars. If they are a common feature, it means they are a more hostile environment than previously thought, with high fluxes of destructive UV photons and X-rays.

  19. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  20. Thermal treatment wall

    DOEpatents

    Aines, Roger D.; Newmark, Robin L.; Knauss, Kevin G.

    2000-01-01

    A thermal treatment wall emplaced to perform in-situ destruction of contaminants in groundwater. Thermal destruction of specific contaminants occurs by hydrous pyrolysis/oxidation at temperatures achievable by existing thermal remediation techniques (electrical heating or steam injection) in the presence of oxygen or soil mineral oxidants, such as MnO.sub.2. The thermal treatment wall can be installed in a variety of configurations depending on the specific objectives, and can be used for groundwater cleanup, wherein in-situ destruction of contaminants is carried out rather than extracting contaminated fluids to the surface, where they are to be cleaned. In addition, the thermal treatment wall can be used for both plume interdiction and near-wellhead in-situ groundwater treatment. Thus, this technique can be utilized for a variety of groundwater contamination problems.

  1. Musculoskeletal chest wall pain

    PubMed Central

    Fam, Adel G.; Smythe, Hugh A.

    1985-01-01

    The musculoskeletal structures of the thoracic wall and the neck are a relatively common source of chest pain. Pain arising from these structures is often mistaken for angina pectoris, pleurisy or other serious disorders. In this article the clinical features, pathogenesis and management of the various musculoskeletal chest wall disorders are discussed. The more common causes are costochondritis, traumatic muscle pain, trauma to the chest wall, “fibrositis” syndrome, referred pain, psychogenic regional pain syndrome, and arthritis involving articulations of the sternum, ribs and thoracic spine. Careful analysis of the history, physical findings and results of investigation is essential for precise diagnosis and effective treatment. ImagesFig. 3Fig. 4Fig. 5 PMID:4027804

  2. Axion domain wall baryogenesis

    SciTech Connect

    Daido, Ryuji; Kitajima, Naoya; Takahashi, Fuminobu

    2015-07-28

    We propose a new scenario of baryogenesis, in which annihilation of axion domain walls generates a sizable baryon asymmetry. Successful baryogenesis is possible for a wide range of the axion mass and decay constant, m≃10{sup 8}–10{sup 13} GeV and f≃10{sup 13}–10{sup 16} GeV. Baryonic isocurvature perturbations are significantly suppressed in our model, in contrast to various spontaneous baryogenesis scenarios in the slow-roll regime. In particular, the axion domain wall baryogenesis is consistent with high-scale inflation which generates a large tensor-to-scalar ratio within the reach of future CMB B-mode experiments. We also discuss the gravitational waves produced by the domain wall annihilation and its implications for the future gravitational wave experiments.

  3. Effects of honeycomb shaped walls on the flow regime between a rotating disk and a stationary wall

    NASA Astrophysics Data System (ADS)

    Uzkan, T.; Lipstein, N. J.

    1986-06-01

    In order to cool a gas turbine disk with a limited supply of coolant air, the radial inflow of hot gases between rotor disk and housing must be reduced. Attention is presently given to the use of different surface shapes on the stationary housing to inhibit disk pumping capacity and hence to reduce the radial influx of hot gases into the clearance. The basic geometry that was experimentally investigated was the flow field between a smooth cylindrical rotating disk parallel to a plain circular coaxial wall open to the free space at the disk periphery. The results obtained are presented in terms of the tangential and radial velocity profiles in the gap, the static pressure measurements, and the disk torque coefficients. A honeycombed stationary wall surface had a profound effect on the ingestion of external flow into the gap from the disk periphery.

  4. Galvanomagnetic Properties and Magnetic Domain Structure of Epitaxial Manganese Arsenide Films on Gallium ARSENIDE(001)

    NASA Astrophysics Data System (ADS)

    Park, Moon Chan

    We have studied galvanomagnetic properties and magnetic domain structure of epitaxial ferromagnetic MnAs thin films on GaAs(001) substrates by molecular beam epitaxy in the thickness range 20-200nm. Using data reported here on ordinary and extraordinary Hall effect to determine the field required for perpendicular saturation and using saturation magnetizations reported elsewhere, we determined the shape anisotropy constant in the basal plane of the hexagonal structure to be 3.7(0.6)times10 ^5 erg/cm^3 and the surface anisotropy constant to be -1.3(0.4) erg/cm^2. The negative sign indicates thin enough films will be perpendicularly magnetized. By using magnetic force microscopy on a 100 nm type-B MnAs film we found stripe domains with 180^circ Bloch walls parallel to the easy direction, thereby avoiding the hard c-axis, which in type-B is tilted up 39^circ. out of the film plane. The widths of the domains and the walls are 4.0(0.3) μm and 95(6) nm, respectively. Similar MFM results were obtained for a 100 nm type-A MnAs thin film having hard c-axis in plane, with an average domain width of 11.7(1.2) mum. This domain width agrees with a calculated value using the effective anisotropy constant data. Magnetoresistance versus field shows a linear past beyond the coercive field H _{c} (VSM value +/-324Oe) due to s-d electron scattering as explained by N. F. Mott. Peaks occur at the transition region observed in the vicinity of H_ {c} in the VSM hysteresis loop and are centered at about H_{c}. The peaks are attributed to electron scattering from the domain walls. The electrical resistance showed a rapid increase with temperature beginning about 5 degrees below the Curie temperature (40^circ C) caused by the change in crystal structure from hexagonal to orthorhombic. The resistivities are, respectively, 300(24) and 375(30) muOmega -cm. Comparison with bulk values indicates the large lower temperature value is partly due to the presence of some orthorhombic phase observed

  5. Head-on Quenching of a Non-premixed Flame by an Inert Wall

    NASA Astrophysics Data System (ADS)

    Bharadwaj, Nidheesh

    2005-11-01

    The quenching characteristics of a nonpremixed flame interacting with a wall have been studied via DNS. The vortex ring is generated by a brief discharge of cold methane fuel into hot air. The ignition of the vortex ring is controlled by adjusting the air temperature. The methane combustion has been modeled using detailed kinetic model GRI3.0. The flame is propelled in the axial direction by the ring induced velocity, and interacts head on with a chemically inert isothermal wall. Two wall conditions are examined, one with and one without a thermal boundary layer. The strength of the flame prior to its interaction with the wall is controlled by varying the distance of the wall from the inlet boundary. The effect of the wall on the heat release rate and the structure of the flame is studied. As the flame approaches the wall the magnitudes of vortex ring induced strain rates acting on the flame increase and the maximum wall heat flux occurs on the centerline. It is found that the increase in the strain rates affects the flame power significantly if there is no thermal boundary layer at the wall. Nondimensional wall heat flux, Peclet number, flame structure and near wall reaction mechanisms have been investigated for front flame quenching. For runs with thermal boundary layer, heat released from HO2 reactions is found to be the major contributor to heat flux at the wall.

  6. Hot Hydrogen Test Facility

    SciTech Connect

    W. David Swank

    2007-02-01

    The core in a nuclear thermal rocket will operate at high temperatures and in hydrogen. One of the important parameters in evaluating the performance of a nuclear thermal rocket is specific impulse, ISp. This quantity is proportional to the square root of the propellant’s absolute temperature and inversely proportional to square root of its molecular weight. Therefore, high temperature hydrogen is a favored propellant of nuclear thermal rocket designers. Previous work has shown that one of the life-limiting phenomena for thermal rocket nuclear cores is mass loss of fuel to flowing hydrogen at high temperatures. The hot hydrogen test facility located at the Idaho National Lab (INL) is designed to test suitability of different core materials in 2500°C hydrogen flowing at 1500 liters per minute. The facility is intended to test non-uranium containing materials and therefore is particularly suited for testing potential cladding and coating materials. In this first installment the facility is described. Automated Data acquisition, flow and temperature control, vessel compatibility with various core geometries and overall capabilities are discussed.

  7. Composite hot drape forming

    NASA Astrophysics Data System (ADS)

    Ott, Thomas

    1994-02-01

    This program was initiated to replace labor-intensive ply-by-ply layup of composite I-beam posts and angle stiffeners used in the Space Station Freedom (SSF) rack structure. Hot drape forming (HDF) has been successfully implemented by BCAG for 777 composite I-stringers and by Bell Helicopter/Textron for the V-22 I-stingers. The two companies utilize two vastly different approaches to the I-beam fabrication process. A drape down process is used by Bell Helicopter where the compacted ply charge is placed on top of a forming mandrel and heated. When the heated ply charge reached a set temperature, vacuum pressure is applied and the plies are formed over the mandrel. The BCAG 777 process utilizes an inverted forming process where the ply stack is placed on a forming table and the mandrel is inverted and placed upon the ply stack. A heating and vacuum bladder underneath the ply stack form the play stack up onto the mandrels after reaching the temperature setpoint. Both methods have their advantages, but the drape down process was selected for SSF because it was more versatile and could be fabricated from readily available components.

  8. Saturn's Hot Spot

    NASA Technical Reports Server (NTRS)

    2005-01-01

    This is the sharpest image of Saturn's temperature emissions taken from the ground; it is a mosaic of 35 individual exposures made at the W.M. Keck I Observatory, Mauna Kea, Hawaii on Feb. 4, 2004.

    The images to create this mosaic were taken with infrared radiation. The mosaic was taken at a wavelength near 17.65 microns and is sensitive to temperatures in Saturn's upper troposphere. The prominent hot spot at the bottom of the image is right at Saturn's south pole. The warming of the southern hemisphere was expected, as Saturn was just past southern summer solstice, but the abrupt changes in temperature with latitude were not expected. The tropospheric temperature increases toward the pole abruptly near 70 degrees latitude from 88 to 89 Kelvin (-301 to -299 degrees Fahrenheit) and then to 91 Kelvin (-296 degrees Fahrenheit) right at the pole.

    Ring particles are not at a uniform temperature everywhere in their orbit around Saturn. The ring particles are orbiting clockwise in this image. Particles are coldest just after having cooled down in Saturn's shadow (lower left). As they orbit Saturn, the particles increase in temperature up to a maximum (lower right) just before passing behind Saturn again in shadow.

    A small section of the ring image is missing because of incomplete mosaic coverage during the observing sequence.

  9. Composite hot drape forming

    NASA Technical Reports Server (NTRS)

    Ott, Thomas

    1994-01-01

    This program was initiated to replace labor-intensive ply-by-ply layup of composite I-beam posts and angle stiffeners used in the Space Station Freedom (SSF) rack structure. Hot drape forming (HDF) has been successfully implemented by BCAG for 777 composite I-stringers and by Bell Helicopter/Textron for the V-22 I-stingers. The two companies utilize two vastly different approaches to the I-beam fabrication process. A drape down process is used by Bell Helicopter where the compacted ply charge is placed on top of a forming mandrel and heated. When the heated ply charge reached a set temperature, vacuum pressure is applied and the plies are formed over the mandrel. The BCAG 777 process utilizes an inverted forming process where the ply stack is placed on a forming table and the mandrel is inverted and placed upon the ply stack. A heating and vacuum bladder underneath the ply stack form the play stack up onto the mandrels after reaching the temperature setpoint. Both methods have their advantages, but the drape down process was selected for SSF because it was more versatile and could be fabricated from readily available components.

  10. Really Hot Stars

    NASA Astrophysics Data System (ADS)

    2003-04-01

    Spectacular VLT Photos Unveil Mysterious Nebulae Summary Quite a few of the most beautiful objects in the Universe are still shrouded in mystery. Even though most of the nebulae of gas and dust in our vicinity are now rather well understood, there are some which continue to puzzle astronomers. This is the case of a small number of unusual nebulae that appear to be the subject of strong heating - in astronomical terminology, they present an amazingly "high degree of excitation". This is because they contain significant amounts of ions, i.e., atoms that have lost one or more of their electrons. Depending on the atoms involved and the number of electrons lost, this process bears witness to the strength of the radiation or to the impact of energetic particles. But what are the sources of that excitation? Could it be energetic stars or perhaps some kind of exotic objects inside these nebulae? How do these peculiar objects fit into the current picture of universal evolution? New observations of a number of such unusual nebulae have recently been obtained with the Very Large Telescope (VLT) at the ESO Paranal Observatory (Chile). In a dedicated search for the origin of their individual characteristics, a team of astronomers - mostly from the Institute of Astrophysics & Geophysics in Liège (Belgium) [1] - have secured the first detailed, highly revealing images of four highly ionized nebulae in the Magellanic Clouds, two small satellite galaxies of our home galaxy, the Milky Way, only a few hundred thousand light-years away. In three nebulae, they succeeded in identifying the sources of energetic radiation and to eludicate their exceptional properties: some of the hottest, most massive stars ever seen, some of which are double. With masses of more than 20 times that of the Sun and surface temperatures above 90 000 degrees, these stars are truly extreme. PR Photo 09a/03: Nebula around the hot star AB7 in the SMC. PR Photo 09b/03: Nebula near the hot Wolf-Rayet star BAT99

  11. Hot Hydrogen Test Facility

    SciTech Connect

    Swank, W. David; Carmack, Jon; Werner, James E.; Pink, Robert J.; Haggard, DeLon C.; Johnson, Ryan

    2007-01-30

    The core in a nuclear thermal rocket will operate at high temperatures and in hydrogen. One of the important parameters in evaluating the performance of a nuclear thermal rocket is specific impulse, ISP. This quantity is proportional to the square root of the propellant's absolute temperature and inversely proportional to square root of its molecular weight. Therefore, high temperature hydrogen is a favored propellant of nuclear thermal rocket designers. Previous work has shown that one of the life-limiting phenomena for thermal rocket nuclear cores is mass loss of fuel to flowing hydrogen at high temperatures. The hot hydrogen test facility located at the Idaho National Lab (INL) is designed to test suitability of different core materials in 2500 deg. C hydrogen flowing at 1500 liters per minute. The facility is intended to test low activity uranium containing materials but is also suited for testing cladding and coating materials. In this first installment the facility is described. Automated data acquisition, flow and temperature control, vessel compatibility with various core geometries and overall capabilities are discussed.

  12. Neptune's 'Hot' South Pole

    NASA Technical Reports Server (NTRS)

    2007-01-01

    These thermal images show a 'hot' south pole on the planet Neptune. These warmer temperatures provide an avenue for methane to escape out of the deep atmosphere.

    The images were obtained with the Very Large Telescope in Chile, using an imager/spectrometer for mid-infrared wavelengths on Sept. 1 and 2, 2006. The telescope is operated by the European Organization for Astronomical Research in the Southern Hemisphere (known as ESO).

    Scientists say Neptune's south pole is 'hotter' than anywhere else on the planet by about 10 degrees Celsius (50 degrees Fahrenheit). The average temperature on Neptune is about minus 200 degrees Celsius (minus 392 degrees Fahrenheit).

    The upper left image samples temperatures near the top of Neptune's troposphere (near 100 millibar pressure, which is one-tenth the Earth atmospheric pressure at sea level). The hottest temperatures are indicated at the lower part of the image, at Neptune's south pole (see the graphic at the upper right). The lower two images, taken 6.3 hours apart, sample temperatures at higher altitudes in Neptune's stratosphere. They do show generally warmer temperatures near, but not at, the south pole. They also show a distinct warm area which can be seen in the lower left image and rotated completely around the back of the planet and returned to the earth-facing hemisphere in the lower right image.

  13. Solutions for Hot Situations

    NASA Technical Reports Server (NTRS)

    2003-01-01

    From the company that brought the world an integral heating and cooling food service system after originally developing it for NASA's Apollo Program, comes yet another orbital offshoot: a product that can be as thin as paper and as strong as steel. Nextel Ceramic Textiles and Composites from 3M Company offer space-age protection and innovative solutions for hot situations, ranging from NASA to NASCAR. With superior thermal protection, Nextel fabrics, tape, and sleevings outperform other high temperature textiles such as aramids, carbon, glass, and quartz, permitting engineers and manufacturers to handle applications up to 2,500 F (1,371 C). The stiffness and strength of Nextel Continuous Ceramic Fibers make them a great match for improving the rigidity of aluminum in metal matrix composites. Moreover, the fibers demonstrate low shrinkage at operating temperatures, which allow for the manufacturing of a dimensionally stable product. These novel fibers also offer excellent chemical resistance, low thermal conductivity, thermal shock resistance, low porosity, and unique electrical properties.

  14. Techniques for hot structures testing

    NASA Technical Reports Server (NTRS)

    Deangelis, V. Michael; Fields, Roger A.

    1990-01-01

    Hot structures testing have been going on since the early 1960's beginning with the Mach 6, X-15 airplane. Early hot structures test programs at NASA-Ames-Dryden focused on operational testing required to support the X-15 flight test program, and early hot structures research projects focused on developing lab test techniques to simulate flight thermal profiles. More recent efforts involved numerous large and small hot structures test programs that served to develop test methods and measurement techniques to provide data that promoted the correlation of test data with results from analytical codes. In Nov. 1988 a workshop was sponsored that focused on the correlation of hot structures test data with analysis. Limited material is drawn from the workshop and a more formal documentation is provided of topics that focus on hot structures test techniques used at NASA-Ames-Dryden. Topics covered include the data acquisition and control of testing, the quartz lamp heater systems, current strain and temperature sensors, and hot structures test techniques used to simulate the flight thermal environment in the lab.

  15. Hot "spoments" in river networks.

    NASA Astrophysics Data System (ADS)

    Aubeneau, A. F.; Aquino, T.; Bolster, D.; Tank, J. L.; Packman, A. I.

    2014-12-01

    Hot spots and hot moments are usually studied at small scales. These small patches or periods of abnormally high biogeochemical activity have been linked to the interface between the terrestrial and aquatic environments and to the benthic ecotone in streams. Here, we revisit the concepts of hot spots and moments in river networks. We specifically consider cases of carbon and nitrogen cycling and explore the interaction between spatial and temporal signals to identify "hot spoments" in the network. We present field data showing that biogeochemical and hydrological processes alternatively control dissolved carbon and nitrogen fluxes. Field experiments and numerical simulations show that both headwater streams and rivers can be efficient at removing nutrients and carbon from the flowing water, but typically under contrasting climatic forcing. We also present new analytical models leveraging graph theory that describe how different parts of the network are biogeochemically active at different times. Taken together, our results suggest that hot-moments depend on space and hot-spots on time, and vice versa. In other words, unusually high biogeochemical activity may be found in different places at different times along river networks. Our simulations suggest that hot "spoments" impact large scale (spatial and temporal) budgets of carbon and nitrogen export from watersheds.

  16. Swift thermal steering of domain walls in ferromagnetic MnBi stripes

    PubMed Central

    Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K. U.; Berakdar, Jamal

    2016-01-01

    We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory. PMID:27076097

  17. Swift thermal steering of domain walls in ferromagnetic MnBi stripes.

    PubMed

    Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K U; Berakdar, Jamal

    2016-01-01

    We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory. PMID:27076097

  18. Swift thermal steering of domain walls in ferromagnetic MnBi stripes

    NASA Astrophysics Data System (ADS)

    Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K. U.; Berakdar, Jamal

    2016-04-01

    We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory.

  19. HOT STARS WITH HOT JUPITERS HAVE HIGH OBLIQUITIES

    SciTech Connect

    Winn, Joshua N.; Albrecht, Simon; Fabrycky, Daniel; Johnson, John Asher

    2010-08-01

    We show that stars with transiting planets for which the stellar obliquity is large are preferentially hot (T{sub eff} > 6250 K). This could explain why small obliquities were observed in the earliest measurements, which focused on relatively cool stars drawn from Doppler surveys, as opposed to hotter stars that emerged more recently from transit surveys. The observed trend could be due to differences in planet formation and migration around stars of varying mass. Alternatively, we speculate that hot-Jupiter systems begin with a wide range of obliquities, but the photospheres of cool stars realign with the orbits due to tidal dissipation in their convective zones, while hot stars cannot realign because of their thinner convective zones. This in turn would suggest that hot Jupiters originate from few-body gravitational dynamics and that disk migration plays at most a supporting role.

  20. Heteroepitaxial Growth of Single-Walled Carbon Nanotubes from Boron Nitride

    PubMed Central

    Tang, Dai-Ming; Zhang, Li-Li; Liu, Chang; Yin, Li-Chang; Hou, Peng-Xiang; Jiang, Hua; Zhu, Zhen; Li, Feng; Liu, Bilu; Kauppinen, Esko I.; Cheng, Hui-Ming

    2012-01-01

    The growth of single-walled carbon nanotubes (SWCNTs) with predefined structure is of great importance for both fundamental research and their practical applications. Traditionally, SWCNTs are grown from a metal catalyst with a vapor-liquid-solid mechanism, where the catalyst is in liquid state with fluctuating structures, and it is intrinsically unfavorable for the structure control of SWCNTs. Here we report the heteroepitaxial growth of SWCNTs from a platelet boron nitride nanofiber (BNNF), which is composed of stacked (002) planes and is stable at high temperatures. SWCNTs are found to grow epitaxially from the open (002) edges of the BNNFs, and the diameters of the SWCNTs are multiples of the BN (002) interplanar distance. In situ transmission electron microscopy observations coupled with first principles calculations reveal that the growth of SWCNTs from the BNNFs follows a vapor-solid-solid mechanism. Our work opens opportunities for the control over the structure of SWCNTs by hetero-crystallographic epitaxy. PMID:23240076

  1. Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Mazet, L.; Bachelet, R.; Louahadj, L.; Albertini, D.; Gautier, B.; Cours, R.; Schamm-Chardon, S.; Saint-Girons, G.; Dubourdieu, C.

    2014-12-01

    Integration of epitaxial complex ferroelectric oxides such as BaTiO3 on semiconductor substrates depends on the ability to finely control their structure and properties, which are strongly correlated. The epitaxial growth of thin BaTiO3 films with high interfacial quality still remains scarcely investigated on semiconductors; a systematic investigation of processing conditions is missing although they determine the cationic composition, the oxygen content, and the microstructure, which, in turn, play a major role on the ferroelectric properties. We report here the study of various relevant deposition parameters in molecular beam epitaxy for the growth of epitaxial tetragonal BaTiO3 thin films on silicon substrates. The films were grown using a 4 nm-thick epitaxial SrTiO3 buffer layer. We show that the tetragonality of the BaTiO3 films, the crystalline domain orientations, and SiO2 interfacial layer regrowth strongly depend on the oxygen partial pressure and temperature during the growth and on the post-deposition anneal. The ferroelectricity of the films, probed using piezoresponse force microscopy, is obtained in controlled temperature and oxygen pressure conditions with a polarization perpendicular to the surface.

  2. Epitaxial thin films for hyperbolic metamaterials

    NASA Astrophysics Data System (ADS)

    Fullager, D.; Alisafaee, H.; Tsu, R.; Fiddy, M. A.

    2014-02-01

    Recent progress in the area of hyperbolic metamaterials (HMMs) has sparked interest in transparent conducting oxides (TCOs) that behave as plasmonic media in the near-IR and at optical frequencies for imaging and sensing applications. It has been shown that by depositing alternating layers of negative-epsilon/positive-epsilon materials, a medium can be created with unusual index values such as near zero. HMMs support high-k waves corresponding to a diverging photonic density of states (PDOS), the quantity determining phenomena such as spontaneous and thermal emission. Also, modeling such structures allows evanescent fields containing sub-wavelength information to be coupled to propagating radiation. We investigate the optical, electronic, and physical properties of radio frequency plasma-assisted molecular beam epitaxial (RF-MBE) growth of alternating layers of ZnO and TCO of uniform thickness for HMM applications. Preliminary work creating HMMs with ZnO and Al-doped ZnO (AZO) has shown a negative real part of the permittivity at near-IR whose modulus is proportional to the number density of Al dopant. However, increasing the Al content of the AZO increases the transmission losses to unacceptable levels for device applications at industry standard wavelengths. A TCO with conductivity and physical structure superior to that of AZO is gallium-doped ZnO (GZO). Uniformly grown GZO has been demonstrated to possess improved crystal quality over AZO due to the higher diffusivity of Al in the ZnO. AZO and GZO HMM structures grown by RF-MBE are characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), Hall effect, four-point probing, deeplevel transient spectroscopy (DLTS), ellipsometry, visible and ultraviolet spectroscopy (UV-VIS) and in-situ reflection high energy electron diffraction (RHEED).

  3. Localized States Influence Spin Transport in Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Maassen, T.; van den Berg, J. J.; Huisman, E. H.; Dijkstra, H.; Fromm, F.; Seyller, T.; van Wees, B. J.

    2013-02-01

    We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

  4. Theoretical Modelling of Hot Stars

    NASA Astrophysics Data System (ADS)

    Najarro, F.; Hillier, D. J.; Figer, D. F.; Geballe, T. R.

    1999-06-01

    Recent progress towards model atmospheres for hot stars is discussed. A new generation of NLTE wind blanketed models, together with high S/N spectra of the hot star population in the central parsec, which are currently being obtained, will allow metal abundance determinations (Fe, Si, Mg, Na, etc). Metallicity studies of hot stars in the IR will provide major constraints not only on the theory of evolution of massive stars but also on our efforts to solve the puzzle of the central parsecs of the Galaxy. Preliminary results suggest that the metallicity of the Pistol Star is 3 times solar, thus indicating strong chemical enrichment of the gas in the Galactic Center.

  5. Not so hot "hot spots" in the oceanic mantle.

    PubMed

    Bonath, E

    1990-10-01

    Excess volcanism and crustal swelling associated with hot spots are generally attributed to thermal plumes upwelling from the mantle. This concept has been tested in the portion of the Mid-Atlantic Ridge between 34 degrees and 45 degrees (Azores hot spot). Peridotite and basalt data indicate that the upper mantle in the hot spot has undergone a high degree of melting relative to the mantle elsewhere in the North Atlantic. However, application of various geothermometers suggests that the temperature of equilibration of peridotites in the mantle was lower, or at least not higher, in the hot spot than elsewhere. The presence of H(2)O-rich metasomatized mantle domains, inferred from peridotite and basalt data, would lower the melting temperature of the hot spot mantle and thereby reconcile its high degree ofmelting with the lack of a mantle temperature anomaly. Thus, some so-called hot spots might be melting anomalies unrelated to abnormally high mantle temperature or thermal plumes. PMID:17808242

  6. The Wall Coverings Challenge

    ERIC Educational Resources Information Center

    Roman, Harry T.

    2012-01-01

    Students love nothing better than personalizing their space--desk, bedroom, or even their cars. This article describes a classroom challenge that gives students a chance to let their spirits soar with the invention of a new form of wall treatment. A trip to a big box store might prove to be most helpful for students to visualize their new product…

  7. Fly on the Wall

    ERIC Educational Resources Information Center

    Berry, Dave; Korpan, Cynthia

    2009-01-01

    This paper describes the implementation of a peer observation program at the University of Victoria called the Lecture Club. The observers are not interactive during the class--they are the proverbial flies on the wall. The paper identifies the program as self-developmental, discussing the attributes of this learning-to-teach and peer-sharing…

  8. A School without Walls.

    ERIC Educational Resources Information Center

    Venuti, Len Tai

    1994-01-01

    During the summer, selected students of Hawaiian ancestry who have completed seventh or eighth grade participate in a boarding program with outdoor activities such as pulling taro, star gazing, and camping. The activities eliminate walls of doubt and fear and nurture self-confidence, creativity, personal growth, leadership, and cultural awareness.…

  9. A Wall of Faces

    ERIC Educational Resources Information Center

    Stevens, Lori

    2008-01-01

    Visitors to the campus of Orland High School (OHS) will never question that they have stepped into a world of the masses: kids, activity, personalities, busyness, and playfulness--a veritable cloud of mild bedlam. The wall of ceramic faces that greets a visitor in the school office is another reminder of the organized chaos that the teachers…

  10. Wall turbulence control

    NASA Technical Reports Server (NTRS)

    Wilkinson, Stephen P.; Lindemann, A. Margrethe; Beeler, George B.; Mcginley, Catherine B.; Goodman, Wesley L.; Balasubramanian, R.

    1986-01-01

    A variety of wall turbulence control devices which were experimentally investigated are discussed; these include devices for burst control, alteration of outer flow structures, large eddy substitution, increased heat transfer efficiency, and reduction of wall pressure fluctuations. Control of pre-burst flow was demonstrated with a single, traveling surface depression which is phase-locked to elements of the burst production process. Another approach to wall turbulence control is to interfere with the outer layer coherent structures. A device in the outer part of a boundary layer was shown to suppress turbulence and reduce drag by opposing both the mean and unsteady vorticity in the boundary layer. Large eddy substitution is a method in which streamline curvature is introduced into the boundary layer in the form of streamwise vortices. Riblets, which were already shown to reduce turbulent drag, were also shown to exhibit superior heat transfer characteristics. Heat transfer efficiency as measured by the Reynolds Analogy Factor was shown to be as much as 36 percent greater than a smooth flat plate in a turbulent boundary layer. Large Eddy Break-Up (LEBU) which are also known to reduce turbulent drag were shown to reduce turbulent wall pressure fluctuation.

  11. Red-Hot Saturn

    NASA Technical Reports Server (NTRS)

    2005-01-01

    These side-by-side false-color images show Saturn's heat emission. The data were taken on Feb. 4, 2004, from the W. M. Keck I Observatory, Mauna Kea, Hawaii. Both images were taken with infrared radiation. The image on the left was taken at a wavelength near 17.65 microns and is sensitive to temperatures in Saturn's upper troposphere. The image on the right was taken at a wavelength of 8 microns and is sensitive to temperatures in Saturn's stratosphere. The prominent hot spot at the bottom of each image is at Saturn's south pole. The warming of the southern hemisphere was expected, as Saturn was just past southern summer solstice, but the abrupt changes in temperature with latitude were not expected.

    The troposphere temperature increases toward the pole abruptly near 70 degrees latitude from 88 to 89 Kelvin (-301 to -299 degrees Fahrenheit) and then to 91 Kelvin (-296 degrees Fahrenheit) right at the pole. Near 70 degrees latitude, the stratospheric temperature increases even more abruptly from 146 to 150 Kelvin (-197 to -189 degrees Fahrenheit) and then again to 151 Kelvin (-188 degrees Fahrenheit) right at the pole.

    While the rings are too faint to be detected at 8 microns (right), they show up at 17.65 microns. The ring particles are orbiting Saturn to the left on the bottom and to the right on the top. The lower left ring is colder than the lower right ring, because the particles are just moving out of Saturn's shadow where they have cooled off. As they orbit Saturn, they warm up to a maximum just before passing behind Saturn again in shadow.

  12. Ion implantation processing of GaN epitaxial layers

    SciTech Connect

    Tan, H.H.; Williams, J.S.; Zou, J.; Cockayne, D.J.H.; Pearton, S.J.; Yuan, C.

    1996-12-31

    Ion implantation induced-damage build up in epitaxial GaN layers grown on sapphire has been analyzed by ion channeling and electron microscopy techniques. The epitaxial layers are extremely resistant to ion beam damage in that substantial dynamic annealing of implantation disorder occurs even at liquid nitrogen temperatures. Amorphous layers can be formed in some cases if the implantation dose is high enough. However, the damage (amorphous or complex extended defects) that is formed is also extremely difficult to remove during annealing and required temperatures in excess of 1,100 C.

  13. Seed layer technique for high quality epitaxial manganite films

    NASA Astrophysics Data System (ADS)

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O'Shea, K.; MacLaren, D. A.; Riminucci, A.; Bergenti, I.; Fugattini, S.; Prezioso, M.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  14. Alignment-Induced Epitaxial Transition in Organic-Organic Heteroepitaxy

    SciTech Connect

    Guo Dong; Sakamoto, Kenji; Miki, Kazushi; Ikeda, Susumu; Saiki, Koichiro

    2008-12-05

    We report the epitaxial growth of thin films of a small organic molecule (pentacene) on polymer substrates with controllable photoalignment over a wide range. The pentacene molecular plane exhibited a distinct orientational change from parallel to perpendicular relative to the polymer chain with increasing substrate polymer alignment. Each orientation consists of twinlike domains. Such characteristics reveal a unique alignment-induced epitaxial transition controlled by the subtle balance of weak interactions, showing a promising approach for tuning the characteristics of organic semiconductor based electronic devices.

  15. Tailoring magnetic frustration in strained epitaxial FeRh films

    NASA Astrophysics Data System (ADS)

    Witte, Ralf; Kruk, Robert; Gruner, Markus E.; Brand, Richard A.; Wang, Di; Schlabach, Sabine; Beck, Andre; Provenzano, Virgil; Pentcheva, Rossitza; Wende, Heiko; Hahn, Horst

    2016-03-01

    We report on a strain-induced martensitic transformation, accompanied by a suppression of magnetic order in epitaxial films of chemically disordered FeRh. X-ray diffraction, transmission electron microscopy, and electronic structure calculations reveal that the lowering of symmetry (from cubic to tetragonal) imposed by the epitaxial relation leads to a further, unexpected, tetragonal-to-orthorhombic transition, triggered by a band-Jahn-Teller-type lattice instability. The collapse of magnetic order is a direct consequence of this structural change, which upsets the subtle balance between ferromagnetic nearest-neighbor interactions arising from Fe-Rh hybridization and frustrated antiferromagnetic coupling among localized Fe moments at larger distances.

  16. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  17. Electron irradiation effects in epitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Pearsall, N. M.; Robson, N.; Sambell, A. J.; Anspaugh, B.; Cross, T. A.

    1991-01-01

    Performance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1 x 1016 e/cm2 are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90 C is reported.

  18. Au-free epitaxial growth of InAs nanowires.

    PubMed

    Mandl, Bernhard; Stangl, Julian; Mårtensson, Thomas; Mikkelsen, Anders; Eriksson, Jessica; Karlsson, Lisa S; Bauer, G Uuml Nther; Samuelson, Lars; Seifert, Werner

    2006-08-01

    III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined. PMID:16895379

  19. Process for growing epitaxial gallium nitride and composite wafers

    DOEpatents

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  20. Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography.

    PubMed

    Liu, Guanxiong; Wu, Yanqing; Lin, Yu-Ming; Farmer, Damon B; Ott, John A; Bruley, John; Grill, Alfred; Avouris, Phaedon; Pfeiffer, Dirk; Balandin, Alexander A; Dimitrakopoulos, Christos

    2012-08-28

    A process for fabricating dense graphene nanoribbon arrays using self-assembled patterns of block copolymers on graphene grown epitaxially on SiC on the wafer scale has been developed. Etching masks comprising long and straight nanoribbon array structures with linewidths as narrow as 10 nm were fabricated, and the patterns were transferred to graphene. Our process combines both top-down and self-assembly steps to fabricate long graphene nanoribbon arrays with low defect counts. These are the narrowest nanoribbon arrays of epitaxial graphene on SiC fabricated to date. PMID:22780305

  1. A&M. Hot liquid waste treatment building (TAN616), south side. Camera ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616), south side. Camera facing north. Personnel door at left side of wall. Partial view of outdoor stairway to upper level platform. Note concrete construction. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-3 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  2. A&M. Hot liquid waste treatment building (TAN616). Camera facing northeast. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616). Camera facing northeast. South wall with oblique views of west sides of structure. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  3. CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP640) LOOKING NORTHEAST ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP-640) LOOKING NORTHEAST SHOWING OVERALL BLOCK EXTERIOR WALLS; CONSTRUCTION 65 PERCENT COMPLETE. INL PHOTO NUMBER NRTS-60-4976. Holmes, Photographer, 9/26/1960 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  4. CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP640) LOOKING NORTHWEST, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP-640) LOOKING NORTHWEST, SHOWING FORMING FOR NORTH WALLS OF CELLS 1, 4 AND 5; CONSTRUCTION 21 PERCENT COMPLETE. INL PHOTO NUMBER NRTS-60-1874. Holmes, Photographer, 4/21/1960 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  5. A&M. TAN607. Special service cubicle (hot cell). Details include Zpipe ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607. Special service cubicle (hot cell). Details include Z-pipe and stepped plug penetrations through shielding wall. Ralph M. Parsons 902-3-ANP-607-A116. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-693-106767 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  6. A&M. Hot cell annex (TAN633) contextual view also showing east ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot cell annex (TAN-633) contextual view also showing east facade. Camera facing west. Note corridor connecting annex to pool area of TAN-607. Pumice block walls. Date: March 2004. INEEL negative no. HD-39-2-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  7. The decay of hot nuclei

    SciTech Connect

    Moretto, L.G.; Wozniak, G.J.

    1988-11-01

    The formation of hot compound nuclei in intermediate-energy heavy ion reactions is discussed. The statistical decay of such compound nuclei is responsible for the abundant emission of complex fragments and high energy gamma rays. 43 refs., 23 figs.

  8. Do scientists trace hot topics?

    PubMed Central

    Wei, Tian; Li, Menghui; Wu, Chensheng; Yan, Xiao-Yong; Fan, Ying; Di, Zengru; Wu, Jinshan

    2013-01-01

    Do scientists follow hot topics in their scientific investigations? In this paper, by performing analysis to papers published in the American Physical Society (APS) Physical Review journals, it is found that papers are more likely to be attracted by hot fields, where the hotness of a field is measured by the number of papers belonging to the field. This indicates that scientists generally do follow hot topics. However, there are qualitative differences among scientists from various countries, among research works regarding different number of authors, different number of affiliations and different number of references. These observations could be valuable for policy makers when deciding research funding and also for individual researchers when searching for scientific projects. PMID:23856680

  9. Morpheus Lander Hot Fire Test

    NASA Video Gallery

    This video shows a successful "hot fire" test of the Morpheus lander on February 27, 2012, at the VTB Flight Complex at NASA's Johnson Space Center. The engine burns for an extended period of time ...

  10. Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Baba, M.; Toh, K.; Toko, K.; Hara, K. O.; Usami, N.; Saito, N.; Yoshizawa, N.; Suemasu, T.

    2013-09-01

    BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. The effect of post-annealing was also investigated at 760 °C for 10 min. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly increased up to approximately 4.0 μm, which is much larger than 0.2 μm, reported previously.

  11. A study on the epitaxial Bi2Se3 thin film grown by vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Cheng; Chen, Yu-Sung; Lee, Chao-Chun; Wu, Jen-Kai; Lee, Hsin-Yen; Liang, Chi-Te; Chang, Yuan Huei

    2016-06-01

    We report the growth of high quality Bi2Se3 thin films on Al2O3 substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the Al2O3 substrate. Carrier concentration in the sample is found to be 1.1 × 1019 cm-3 between T = 2 K to T = 300 K, and electron mobility can reach 954 cm2/V s at T = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state.

  12. Edge Plasma Analysis for Liquid-wall MFE Concepts

    SciTech Connect

    Moir, R W; Rensink, M; Rognlien, T D

    2000-09-21

    A thick flowing layer of liquid (e.g., flibe-a molten salt, or Sn{sub 80}Li{sub 20}--a liquid metal) protects the structural walls of the magnetic fusion configuration so that they can last the life of the plant even with intense 14 MeV neutron bombardment from the D-T fusion reaction, The surface temperature of the liquid rises as it passes from the inlet nozzles to the exit nozzles due to absorption of line and bremsstrahlung radiation, and neutrons. The surface temperature can be reduced by enhanced turbulent convection of hot surface liquid into the cooler interior. This surface temperature is affected by the temperature of liquid from a heat transport and energy recovery system. The evaporative flux from the wall driven by the surface temperature must also result in an acceptable impurity level in the core plasma. The shielding of the core by the edge plasma is modeled with a 2D-transport code for the DT and impurity ions; these impurity ions are either swept out to the divertor, or diffuse to the hot plasma core. An auxiliary plasma between the edge plasma and the liquid wall may further attenuate evaporating flux of atoms and molecules by ionization near the wall.

  13. Moisture Research - Optimizing Wall Assemblies

    SciTech Connect

    Arena, Lois; Mantha, Pallavi

    2013-05-01

    In this project, the Consortium for Advanced Residential Buildings (CARB) team evaluated several different configurations of wall assemblies to determine the accuracy of moisture modeling and make recommendations to ensure durable, efficient assemblies. WUFI and THERM were used to model the hygrothermal and heat transfer characteristics of these walls. Wall assemblies evaluated included code minimum walls using spray foam insulation and fiberglass batts, high R-value walls at least 12 in. thick (R-40 and R-60 assemblies), and brick walls with interior insulation.

  14. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ≤0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 °C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 °C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ≤ 400 °C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ≥ 500 °C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 °C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  15. DETAIL OF CROCKETT BARN WALL CONSTRUCTION, UPPER LEVEL. The wall ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    DETAIL OF CROCKETT BARN WALL CONSTRUCTION, UPPER LEVEL. The wall construction of the Crockett barn includes a layer of diagonal sheathing that is exposed on the interior. - Crockett Farm, Barn, 1056 Fort Casey Road, Coupeville, Island County, WA

  16. 4. CONSTRUCTION DETAIL, SW CORNER, SHOWING RETAINING WALL, BRIDGE WALL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. CONSTRUCTION DETAIL, SW CORNER, SHOWING RETAINING WALL, BRIDGE WALL AND EROSION ON ROAD SURFACE. - Bridalveil Fall Bridge No. 3, Spanning Bridalveil Creek on carriage road, Yosemite Village, Mariposa County, CA

  17. EAST WALL OF CRYSTALLIZER WING TO THE LEFT, END WALL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    EAST WALL OF CRYSTALLIZER WING TO THE LEFT, END WALL OF CRUSHING MILL IN CENTER. GABLE END OF BOILING HOUSE IN LEFT BACKGROUND. VIEW FROM THE SOUTH - Kekaha Sugar Company, Sugar Mill Building, 8315 Kekaha Road, Kekaha, Kauai County, HI

  18. Typical Window, Interior Wall Paint Sequence, Wall Section, and Foundation ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Typical Window, Interior Wall Paint Sequence, Wall Section, and Foundation Sections - Civilian Conservation Corps (CCC) Camp NP-5-C, Barracks No. 5, CCC Camp Historic District at Chapin Mesa, Cortez, Montezuma County, CO

  19. Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Asghar, M.; K., Mahmood; A. Hasan, M.; T. Ferguson, I.; Tsu, R.; Willander, M.

    2014-09-01

    We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current—voltage (I—V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ±0.03 eV and capture cross-section of 8.57 × 10-18 cm2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.

  20. A Tunable Magnetic Domain Wall Conduit Regulating Nanoparticle Diffusion.

    PubMed

    Tierno, Pietro; Johansen, Tom H; Sancho, José M

    2016-08-10

    We demonstrate a general and robust method to confine on a plane strongly diffusing nanoparticles in water by using size tunable magnetic channels. These virtual conduits are realized with pairs of movable Bloch walls located within an epitaxially grown ferrite garnet film. We show that once inside the magnetic conduit the particles experience an effective local parabolic potential in the transverse direction, while freely diffusing along the conduit. The stiffness of the magnetic potential is determined as a function of field amplitude that varies the width of the magnetic channel. Precise control of the degree of confinement is demonstrated by tuning the applied field. The magnetic conduit is then used to realize single files of nonpassing particles and to induce periodic condensation of an ensemble of particles into parallel stripes in a completely controllable and reversible manner. PMID:27434042

  1. Rapid Fabrication Techniques for Liquid Rocket Channel Wall Nozzles

    NASA Technical Reports Server (NTRS)

    Gradl, Paul R.

    2016-01-01

    The functions of a regeneratively-cooled nozzle are to (1) expand combustion gases to increase exhaust gas velocity while, (2) maintaining adequate wall temperatures to prevent structural failure, and (3) transfer heat from the hot gases to the coolant fluid to promote injector performance and stability. Regeneratively-cooled nozzles are grouped into two categories: tube-wall nozzles and channel wall nozzles. A channel wall nozzle is designed with an internal liner containing a series of integral coolant channels that are closed out with an external jacket. Manifolds are attached at each end of the nozzle to distribute coolant to and away from the channels. A variety of manufacturing techniques have been explored for channel wall nozzles, including state of the art laser-welded closeouts and pressure-assisted braze closeouts. This paper discusses techniques that NASA MSFC is evaluating for rapid fabrication of channel wall nozzles that address liner fabrication, slotting techniques and liner closeout techniques. Techniques being evaluated for liner fabrication include large-scale additive manufacturing of freeform-deposition structures to create the liner blanks. Abrasive water jet milling is being evaluated for cutting the complex coolant channel geometries. Techniques being considered for rapid closeout of the slotted liners include freeform deposition, explosive bonding and Cold Spray. Each of these techniques, development work and results are discussed in further detail in this paper.

  2. ELM-Induced Plasma Wall Interactions in DIII-D

    SciTech Connect

    Rudakov, D L; Boedo, J A; Yu, J H; Brooks, N H; Fenstermacher, M E; Groth, M; Hollmann, E M; Lasnier, C J; McLean, A G; Moyer, R A; Stangeby, P C; Tynan, G R; Wampler, W R; Watkins, J G; West, W P; Wong, C C; Zeng, L; Bastasz, R J; Buchenauer, D; Whaley, J

    2008-05-14

    Intense transient fluxes of particles and heat to the main chamber components induced by edge localized modes (ELMs) are of serious concern for ITER. In DIII-D, plasma interaction with the outboard chamber wall is studied using Langmuir probes and optical diagnostics including a fast framing camera. Camera data shows that ELMs feature helical filamentary structures localized at the low field side of the plasma and aligned with the local magnetic field. During the nonlinear phase of an ELM, multiple filaments are ejected from the plasma edge and propagate towards the outboard wall with velocities of 0.5-0.7 km/s. When reaching the wall, filaments result in 'hot spots'--regions of local intense plasma-material interaction (PMI) where the peak incident particle and heat fluxes are up to 2 orders of magnitude higher than those between ELMs. This interaction pattern has a complicated geometry and is neither toroidally nor poloidally symmetric. In low density/collisionality H-mode discharges, PMI at the outboard wall is almost entirely due to ELMs. In high density/collisionality discharges, contributions of ELMs and inter-ELM periods to PMI at the wall are comparable. A Midplane Material Evaluation Station (MiMES) has been recently installed in order to conduct in situ measurements of erosion/redeposition at the outboard chamber wall, including those caused by ELMs.

  3. Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications

    NASA Astrophysics Data System (ADS)

    Wenisch, J.; Schirmacher, W.; Wollrab, R.; Eich, D.; Hanna, S.; Breiter, R.; Lutz, H.; Figgemeier, H.

    2015-09-01

    Molecular beam epitaxy (MBE) growth of HgCdTe (MCT) on alternative substrates enables production of both cheaper and more versatile (third-generation) infrared (IR) detectors. After rapid progress in the development of MBE-grown MCT on GaAs in recent years, the question of whether the considerable benefits of this material system are also applicable to high-operating-temperature (HOT) applications demands attention. In this paper, we present a mid-wavelength-IR 640 × 512 pixel, 15- μm-pitch focal-plane array with operability of 99.71% at operating temperature of 120 K and low dark current density. In the second part of the paper, MBE growth of short-wavelength IR material with Cd fraction of up to 0.8 is investigated as the basis for future evaluation of the material for low-light-level imaging HOT applications.

  4. Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

    NASA Astrophysics Data System (ADS)

    Vrejoiu, I.; Himcinschi, C.; Jin, L.; Jia, C.-L.; Raab, N.; Engelmayer, J.; Waser, R.; Dittmann, R.; van Loosdrecht, P. H. M.

    2016-04-01

    Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3 film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films.

  5. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

    PubMed Central

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-01-01

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°. PMID:26442629

  6. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  7. Refrigerator with anti-sweat hot liquid loop

    SciTech Connect

    Woolley, S.J.; Cushing, D.S.; Jenkins, T.E.; Gerdes, K.W.; Sisler, R.R.

    1988-04-05

    A cabinet assembly for a refrigerator having a freezer compartment ontop with two top front corners, a fresh food compartment on the bottom, a mullion partition between the compartments and a hot liquid anti-sweat loop is described comprising; an outer sheet metal shell having a top panel, side panels and a front face, a brace located at each of the two top front corners of the cabinet and having two formed sections at right angles to each other and each section is formed as an inwardly open U-shaped channel having a base, a first leg and a second leg spaced apart and integrally joined to the base, fastening means for rigidly attaching each of the second leg of the corner braces to the flange of the third wall of the front face, and means to secure a portion of the hot liquid anti-sweat loop to the braces.

  8. High-R Walls for Remodeling. Wall Cavity Moisture Monitoring

    SciTech Connect

    Wiehagen, J.; Kochkin, V.

    2012-12-01

    The focus of the study is on the performance of wall systems, and in particular, the moisture characteristics inside the wall cavity and in the wood sheathing. Furthermore, while this research will initially address new home construction, the goal is to address potential moisture issues in wall cavities of existing homes when insulation and air sealing improvements are made.

  9. High-R Walls for Remodeling: Wall Cavity Moisture Monitoring

    SciTech Connect

    Wiehagen, J.; Kochkin, V.

    2012-12-01

    The focus of the study is on the performance of wall systems, and in particular, the moisture characteristics inside the wall cavity and in the wood sheathing. Furthermore, while this research will initially address new home construction, the goal is to address potential moisture issues in wall cavities of existing homes when insulation and air sealing improvements are made.

  10. 25. NORTH TRAINING WALL, EAST SECTION, SIDE WALL CONSTRUCTION, LOOKING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    25. NORTH TRAINING WALL, EAST SECTION, SIDE WALL CONSTRUCTION, LOOKING WEST FROM A POINT ABOUT 500 FEET FROM THE MIDDLE HARBOR PARK FISHING PIER. (Panoramic view 1 of 2). - Oakland Harbor Training Walls, Mouth of Federal Channel to Inner Harbor, Oakland, Alameda County, CA

  11. 38. NORTHEAST ROOM, SECOND FLOOR, SOUTH WALL. ROOM COMPLETELY WALLED ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    38. NORTHEAST ROOM, SECOND FLOOR, SOUTH WALL. ROOM COMPLETELY WALLED WITH RANDOM WIDTH BOARDS WHICH WERE PAPERED OR PLASTERED OVER. THIS WAS TYPICAL THROUGHOUT HOUSE EXCEPT FOR WOOD PANELED WALLS - John Mark Verdier House, 801 Bay & Scott Streets, Beaufort, Beaufort County, SC

  12. The Dielectric Wall Accelerator

    SciTech Connect

    Caporaso, George J.; Chen, Yu-Jiuan; Sampayan, Stephen E.

    2009-01-01

    The Dielectric Wall Accelerator (DWA), a class of induction accelerators, employs a novel insulating beam tube to impress a longitudinal electric field on a bunch of charged particles. The surface flashover characteristics of this tube may permit the attainment of accelerating gradients on the order of 100 MV/m for accelerating pulses on the order of a nanosecond in duration. A virtual traveling wave of excitation along the tube is produced at any desired speed by controlling the timing of pulse generating modules that supply a tangential electric field to the tube wall. Because of the ability to control the speed of this virtual wave, the accelerator is capable of handling any charge to mass ratio particle; hence it can be used for electrons, protons and any ion. The accelerator architectures, key technologies and development challenges will be described.

  13. Quasi-one-dimensional domain walls in ferroelectric ceramics: Evidence from domain dynamics and wall roughness measurements

    NASA Astrophysics Data System (ADS)

    Pertsev, N. A.; Kiselev, D. A.; Bdikin, I. K.; Kosec, M.; Kholkin, A. L.

    2011-09-01

    Direct measurements of the motion of domain walls in disordered ferroelectrics provide important information on their interaction with defects, which is crucial for the functioning of various ferroelectric devices such as high-K capacitors and ferroelectric-based memories. In this work, we report on the results of the nanoscale measurements of domain-wall velocity and static domain-wall roughness in disordered (Pb,La)(Zr,Ti)O3 (PLZT) ceramics prepared by hot press sintering. Relaxation of domain walls to their equilibrium configurations at short length scales yields the apparent roughness exponent ζ ≈ 0.67 in PLZT 9.5/65/35. At the same time, the dynamical exponent μ was found to be about 0.25 from the independent measurements of domain-wall creep under local application of electric field. An analysis of these two values points to the effective dimensionality deff = 1 for the domain walls in PLZT with high La content. This result is confirmed by the layer-by-layer polishing followed by the imaging of an artificially created domain. The origin of disorder and its dependence on La concentration in PLZT solid solutions are discussed.

  14. Investigation on the electron flux to the wall in the VENUS ion source

    NASA Astrophysics Data System (ADS)

    Thuillier, T.; Angot, J.; Benitez, J. Y.; Hodgkinson, A.; Lyneis, C. M.; Todd, D. S.; Xie, D. Z.

    2016-02-01

    The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.

  15. Investigation on the electron flux to the wall in the VENUS ion source.

    PubMed

    Thuillier, T; Angot, J; Benitez, J Y; Hodgkinson, A; Lyneis, C M; Todd, D S; Xie, D Z

    2016-02-01

    The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall. PMID:26931954

  16. Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

    NASA Astrophysics Data System (ADS)

    Ganapathy, Rajesh; Buckley, Mark R.; Gerbode, Sharon J.; Cohen, Itai

    2010-01-01

    Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

  17. Thermal Stress in HFEF Hot Cell Windows Due to an In-Cell Metal Fire

    SciTech Connect

    Solbrig, Charles W.; Warmann, Stephen A.

    2016-01-01

    This work investigates an accident during the pyrochemical extraction of Uranium and Plutonium from PWR spent fuel in an argon atmosphere hot cell. In the accident, the heavy metals (U and Pu) being extracted are accidentally exposed to air from a leaky instrument penetration which goes through the cell walls. The extracted pin size pieces of U and Pu metal readily burn when exposed to air. Technicians perform the electrochemical extraction using manipulators through a 4 foot thick hot cell concrete wall which protects them from the radioactivity of the spent fuel. Four foot thick windows placed in the wall allow the technicians to visually control the manipulators. These windows would be exposed to the heat of the metal fire. As a result, this analysis determines if the thermal stress caused by the fire would crack the windows and if the heat would degrade the window seals allowing radioactivity to escape from the cell.

  18. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  19. Depositing spacing layers on magnetic film with liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Moody, J. W.; Shaw, R. W.; Sanfort, R. M.

    1975-01-01

    Liquid phase epitaxy spacing layer is compatible with systems which are hard-bubble proofed by use of second magnetic garnet film as capping layer. Composite is superior in that: circuit fabrication time is reduced; adherence is superior; visibility is better; and, good match of thermal expansion coefficients is provided.

  20. Strained-layer epitaxy of germanium-silicon alloys.

    PubMed

    Bean, J C

    1985-10-11

    Despite the dominant position of silicon in semiconductor electronics, its use is ultimately limited by its incompatibility with other semiconducting materials. Strained-layer epitaxy overcomes problems of crystallographic compatibility and produces high-quality heterostructures of germanium-silicon layers on silicon. This opens the door to a range of electronic and photonic devices that are based on bandstructure physics. PMID:17842673

  1. Spatially Correlated Disorder in Epitaxial van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Laanait, Nouamane; Zhang, Zhan; Schleputz, Christian; Liu, Ying; Wojcik, Michael; Myers-Ward, Rachael; Gaskill, D. Kurt; Fenter, Paul; Li, Lian

    The structural cohesion of van der Waals (vdW) heterostructures relies upon a cooperative balance between strong intra-layer bonded interactions and weak inter-layer coupling. The confinement of extended defects to within a single vdW layer and competing interactions introduced by epitaxial constraints could generate fundamentally new structural disorders. Here we report on the presence of spatially correlated and localized disorder states that coexist with the near perfect crystallographic order along the growth direction of epitaxial vdW heterostructure of Bi2Se3/graphene/SiC grown by molecular beam epitaxy. With the depth penetration of hard X-ray diffraction microscopy and high-resolution surface scattering, we imaged local structural configurations from the atomic to mesoscopic length scales, and found that these disorder states result as a confluence of atomic scale modulations in the strength of vdW layer-layer interactions and nanoscale boundary conditions imposed by the substrate. These findings reveal a vast landscape of novel disorder states that can be manifested in epitaxial vdW heterostructures. Supported by the Wigner Fellowship program at Oak Ridge Nat'l Lab.

  2. Hard proximity induced superconducting gap in semiconductor - superconductor epitaxial hybrids

    NASA Astrophysics Data System (ADS)

    Jespersen, Thomas; Krogstrup, Peter; Ziino, Nino; Albrecht, Sven; Chang, Willy; Madsen, Morten; Johnson, Erik; Kuemmeth, Ferdinand; Nygård, Jesper; Marcus, Charles

    2015-03-01

    We present molecular beam epitaxy grown InAs semiconductor nanowires capped with a shell of aluminum (superconductor). The hybrid wires are grown without breaking vacuum, resulting in an epitaxial interface between the two materials as demonstrated by detailed transmission electron microscopy and simulations. The domain matching at the interface is discussed. Incorporating the epitaxial nanowire hybrids in electrical devices we performed detailed tunneling spectroscopy of the proximity induced superconducting gap in the InAs core at 20 mK. We find the sub-gap conductance being at least a factor 200 smaller than the normal state value (gap hardness). This is a significant improvement compared to devices fabricated by conventional lithographic methods and metal evaporation showing no more than a factor of ~ 5 . The epitaxial hybrids seem to solve the soft gap problem associated with the use of nanowire hybrids for future applications in topological quantum information based on Majorana zero modes. Research supported by Microsoft Station Q, Danish National Research Foundation, Villum Foundation, Lundbeck Foundation, and the European Commission.

  3. Growth of Epitaxial Oxide Thin Films on Graphene.

    PubMed

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M; Klein, Norbert; Alford, Neil M; Petrov, Peter K

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  4. Growth of Epitaxial Oxide Thin Films on Graphene

    PubMed Central

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  5. Improved epitaxial process for fabricating silicon carbide semiconductor devices

    NASA Technical Reports Server (NTRS)

    Will, H. A.; Powell, J. A.

    1974-01-01

    Process of growing expitaxial silicon carbide (SiC) layers on SiC substrates so that epitaxial growth is perpendicular to c-axis by chemical vapor deposition process at temperatures of 1590 to 1660 K minimizes variations in stacking sequence and problems associated with high temperatures.

  6. Crystallization engineering as a route to epitaxial strain control

    SciTech Connect

    Akbashev, Andrew R.; Plokhikh, Aleksandr V.; Barbash, Dmitri; Lofland, Samuel E.; Spanier, Jonathan E.

    2015-10-01

    The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001)SrTiO{sub 3} and (001)LaAlO{sub 3} substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001)BiFeO{sub 3} phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001)SrTiO{sub 3} results in a coherently strained film, the same films obtained on (001)LaAlO{sub 3} showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001)SrTiO{sub 3}. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

  7. Hot-electron energy relaxation time in Ga-doped ZnO films

    SciTech Connect

    Šermukšnis, E. Liberis, J.; Ramonas, M.; Matulionis, A.; Toporkov, M.; Liu, H. Y.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-02-14

    Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from pulsed hot-electron noise measurements at room temperature. The relaxation time increases from ∼0.17 ps to ∼1.8 ps when the electron density increases from 1.4 × 10{sup 17 }cm{sup −3} to 1.3 × 10{sup 20 }cm{sup −3}. A local minimum is resolved near an electron density of 1.4 × 10{sup 19 }cm{sup −3}. The longest energy relaxation time (1.8 ps), observed at the highest electron density, is in good agreement with the published values obtained by optical time-resolved luminescence and absorption experiments. Monte Carlo simulations provide a qualitative interpretation of our observations if hot-phonon accumulation is taken into account. The local minimum of the electron energy relaxation time is explained by the ultrafast plasmon-assisted decay of hot phonons in the vicinity of the plasmon–LO-phonon resonance.

  8. Bumper wall for plasma device

    DOEpatents

    Coultas, Thomas A.

    1977-01-01

    Operation of a plasma device such as a reactor for controlled thermonuclear fusion is facilitated by an improved bumper wall enclosing the plasma to smooth the flow of energy from the plasma as the energy impinges upon the bumper wall. The bumper wall is flexible to withstand unequal and severe thermal shocks and it is readily replaced at less expense than the cost of replacing structural material in the first wall and blanket that surround it.

  9. Domain Walls with Strings Attached

    SciTech Connect

    Shmakova, Marina

    2001-08-20

    We have constructed a bulk and brane action of IIA theory which describes a pair of BPS domain walls on S{sub 1}/Z{sub 2}, with strings attached. The walls are given by two orientifold O8-planes with coincident D8-branes and F1-D0-strings are stretched between the walls. This static configuration satisfies all matching conditions for the string and domain wall sources and has 1/4 of unbroken supersymmetry.

  10. Fluids in micropores. V. Effects of thermal motion in the walls of a slit-micropore

    SciTech Connect

    Diestler, D.J.; Schoen, M.

    1996-05-01

    Previous articles in this series have concerned the prototypal slit-pore with {ital rigid} walls, in which a Lennard-Jones (12,6) monatomic film is constrained between two plane-parallel walls comprising like atoms fixed in the face-centered-cubic (fcc) (100) configuration. The behavior of molecularly thin films in the rigid-wall prototype is governed by the template effect, whereby solid films can form epitaxially when the walls are properly aligned in the lateral directions. In this article the influence of thermal motion of the wall atoms on the template effect is investigated. The walls are treated as Einstein solids, the atoms moving independently in harmonic potentials centered on rigidly fixed equilibrium positions in the fcc (100) configuration. The force constant {ital f}{sub {ital c}} is a measure of the stiffness of the walls, the rigid-wall limit being {ital f}{sub {ital c}}={infinity}. Formal thermodynamic and statistical mechanical analyses of the system are carried out. The results of grand canonical ensemble Monte Carlo simulations indicate that for values of {ital f}{sub {ital c}} characteristic of a soft (e.g., noble-gas) crystal dynamic coupling between wall and film has a substantial influence on such equilibrium properties as normal stress (load) and interfacial tensions. In general, the softer the walls (i.e., the smaller the value of {ital f}{sub {ital c}}), the weaker the template effect and hence the softer and more disordered the confined film. {copyright} {ital 1996 American Institute of Physics.}

  11. Molded Concrete Center Mine Wall

    NASA Technical Reports Server (NTRS)

    Lewis, E. V.

    1987-01-01

    Proposed semiautomatic system forms concrete-foam wall along middle of coal-mine passage. Wall helps support roof and divides passage into two conduits needed for ventilation of coal face. Mobile mold and concrete-foam generator form sections of wall in place.

  12. Decontamination of the Plum Brook Reactor Facility Hot Cells

    SciTech Connect

    Peecook, K.M.

    2008-07-01

    The NASA Plum Brook Reactor Facility decommissioning project recently completed a major milestone with the successful decontamination of seven hot cells. The cells included thick concrete walls and leaded glass windows, manipulator arms, inter cell dividing walls, and roof slabs. There was also a significant amount of embedded conduit and piping that had to be cleaned and surveyed. Prior to work starting evaluation studies were performed to determine whether it was more cost effective to do this work using a full up removal approach (rip and ship) or to decontaminate the cells to below required clean up levels, leaving the bulk of the material in place. This paper looks at that decision process, how it was implemented, and the results of that effort including the huge volume of material that can now be used as fill during site restoration rather than being disposed of as LLRW. (authors)

  13. [Chest wall reconstruction after resection of malignant chest wall tumors].

    PubMed

    Ayabe, H; Oka, T; Akamine, S; Takahashi, T; Nagayasu, T

    1998-05-01

    Full-thickness chest wall resection is performed for complete removal of primary and secondary malignant chest wall tumors. Large defects of the chest wall after resection must be repaired to maintain adequate ventilation, to protect important intrathoracic structures, and to preserve cosmetic integrity. Various materials have been utilized over the years to replace the rigid chest wall. At present, Marlex mesh and a composite of Marlex mesh and methylmethacrylate are frequently used to reconstruct rigid chest wall defects. On the other hand, to replace the soft part of the chest wall and cover the rigid materials, pedicled muscle flaps, myocutaneous flaps, or omentum are used. Major pedicled flaps include the pectoralis major, rectus abdominis and latissimus dorsi muscular, and musculocutaneous flaps. Techniques are now available to repair any chest wall site, and to restore chest continuity in patients whose tumors are curatively resected. PMID:9656244

  14. On the density of states of disordered epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-05-15

    The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum.

  15. Development of asymmetric epitaxial structures for 65% efficiency laser diodes in the 9xx-nm range

    NASA Astrophysics Data System (ADS)

    Levy, Moshe; Karni, Yoram; Rapaport, Noam; Don, Yaroslav; Berk, Yuri; Yanson, Dan; Cohen, Shalom; Oppenheim, Jacob

    2010-02-01

    High-power single emitters have recently become a viable alternative to laser diode bars for fiber pumping applications. Single emitters offer a tenfold increase in brightness over bars, and can be optically combined to scale the power towards 100 W with high brightness. Wall-plug efficiencies >60% are needed to warrant the use of fiber-coupled single emitters in fiber laser systems, which requires careful minimization of the optical loss, electrical resistance and operating voltage of the emitters. Epitaxial wafer design necessarily involves multiple trade-offs, since doping concentrations have opposing effects on the electrical resistance and optical losses. In this paper, we report asymmetric epitaxial waveguide designs for high-efficiency laser operation at 9xx nm. We present a simulation study of the influence of design parameters such as the number of quantum wells, doping profiles, and overlap integral of each epilayer. We also show that by introducing an auxiliary waveguide into the lower cladding, we can control the overlap of the optical mode with the doping profiles - as well as the vertical far-field - without compromising the electrical resistance. The optimized structures were grown and devices fabricated, with optical losses reduced to 0.5 cm-1, and resistivity to 6.5 Ohm×sq.cm. An optical power of 10 W with >60% efficiency was achieved from 100 μm stripe emitters.

  16. Wall-to-suspension heat transfer in circulating fluidized beds

    SciTech Connect

    Wirth, K.E.

    1995-12-31

    The wall-to-suspension heat transfer in circulating fluidized beds depends on the fluid mechanics immediately near the wall and on the thermal properties of the gas used. Experimental investigations of circulating fluidized beds of low dimensionless pressure gradients with different solid particles like bronze, glass and polystyrene at ambient temperatures showed no influence of the conductivity and the heat capacity of the solids on the heat transfer coefficient. Consequently the heat transfer coefficient in the form of the dimensionless Nusselt number can be described by the dimensionless numbers which characterize the gas-solid-flow near the wall. These numbers are the Archimedes number and the pressure drop-number. The last number relates the cross-sectional average solids concentration to the solids concentration at minimum fluidization condition. With the aid of a model of segregated vertical gas-solid flow, the flow pattern in the wall region can be calculated and thus the wall heat transfer which depends only on heat conduction in the gas and on the convective heat transfer by the gas. With elevated suspension temperatures, radiation contributes additionally to the heat transfer. When the solids concentration is low, the effect of the radiation on the heat transfer is high. Increasing solids concentration results in a decrease of the radiation effect due to the wall being shielded from the radiation of the hot particles in the core region by the cold solids clusters moving down the wall. A simple correlation is presented for calculating the wall-to-suspension heat transfer in circulating fluidized beds.

  17. Left ventricular wall stress compendium.

    PubMed

    Zhong, L; Ghista, D N; Tan, R S

    2012-01-01

    Left ventricular (LV) wall stress has intrigued scientists and cardiologists since the time of Lame and Laplace in 1800s. The left ventricle is an intriguing organ structure, whose intrinsic design enables it to fill and contract. The development of wall stress is intriguing to cardiologists and biomedical engineers. The role of left ventricle wall stress in cardiac perfusion and pumping as well as in cardiac pathophysiology is a relatively unexplored phenomenon. But even for us to assess this role, we first need accurate determination of in vivo wall stress. However, at this point, 150 years after Lame estimated left ventricle wall stress using the elasticity theory, we are still in the exploratory stage of (i) developing left ventricle models that properly represent left ventricle anatomy and physiology and (ii) obtaining data on left ventricle dynamics. In this paper, we are responding to the need for a comprehensive survey of left ventricle wall stress models, their mechanics, stress computation and results. We have provided herein a compendium of major type of wall stress models: thin-wall models based on the Laplace law, thick-wall shell models, elasticity theory model, thick-wall large deformation models and finite element models. We have compared the mean stress values of these models as well as the variation of stress across the wall. All of the thin-wall and thick-wall shell models are based on idealised ellipsoidal and spherical geometries. However, the elasticity model's shape can vary through the cycle, to simulate the more ellipsoidal shape of the left ventricle in the systolic phase. The finite element models have more representative geometries, but are generally based on animal data, which limits their medical relevance. This paper can enable readers to obtain a comprehensive perspective of left ventricle wall stress models, of how to employ them to determine wall stresses, and be cognizant of the assumptions involved in the use of specific models

  18. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  19. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  20. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2015-01-06

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  1. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE PAGESBeta

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; et al

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  2. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  3. Magnetic domain wall manipulation in (Ga,Mn)As nanostructures for spintronic applications

    SciTech Connect

    Wosinski, Tadeusz; Andrearczyk, Tomasz; Figielski, Tadeusz; Olender, Karolina; Wrobel, Jerzy

    2014-02-21

    Ring-shaped nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, in a form of planar rings with a slit, were supplied with four electrical terminals and subjected to magneto-transport studies under planar weak magnetic field. Magnetoresistive effects caused by manipulation of magnetic domain walls and magnetization reversal in the nanostructures have been investigated and possible applications of the nanostructures as four-terminal spintronic devices are discussed.

  4. Periodic alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Olmedo, Mario; Martinez-Morales, Alfredo A.; Liu, Gang; Yengel, Emre; Ozkan, Cengiz S.; Lau, Chun Ning; Ozkan, Mihrimah; Liu, Jianlin

    2009-03-01

    We demonstrate a bottom up approach for the aligned epitaxial growth of Si quantum dots (QDs) on one-dimensional (1D) hafnium oxide (HfO2) ridges created by the growth of HfO2 thin film on single wall carbon nanotubes. This growth process creates a high strain 1D ridge on the HfO2 film, which favors the formation of Si seeds over the surrounding flat HfO2 area. Periodic alignment of Si QDs on the 1D HfO2 ridge was observed, which can be controlled by varying different growth conditions, such as growth temperature, growth time, and disilane flow rate.

  5. Prometheus Hot Leg Piping Concept

    SciTech Connect

    Gribik, Anastasia M.; DiLorenzo, Peter A.

    2007-01-30

    The Naval Reactors Prime Contractor Team (NRPCT) recommended the development of a gas cooled reactor directly coupled to a Brayton energy conversion system as the Space Nuclear Power Plant (SNPP) for NASA's Project Prometheus. The section of piping between the reactor outlet and turbine inlet, designated as the hot leg piping, required unique design features to allow the use of a nickel superalloy rather than a refractory metal as the pressure boundary. The NRPCT evaluated a variety of hot leg piping concepts for performance relative to SNPP system parameters, manufacturability, material considerations, and comparison to past high temperature gas reactor (HTGR) practice. Manufacturability challenges and the impact of pressure drop and turbine entrance temperature reduction on cycle efficiency were discriminators between the piping concepts. This paper summarizes the NRPCT hot leg piping evaluation, presents the concept recommended, and summarizes developmental issues for the recommended concept.

  6. Prometheus Hot Leg Piping Concept

    NASA Astrophysics Data System (ADS)

    Gribik, Anastasia M.; DiLorenzo, Peter A.

    2007-01-01

    The Naval Reactors Prime Contractor Team (NRPCT) recommended the development of a gas cooled reactor directly coupled to a Brayton energy conversion system as the Space Nuclear Power Plant (SNPP) for NASA's Project Prometheus. The section of piping between the reactor outlet and turbine inlet, designated as the hot leg piping, required unique design features to allow the use of a nickel superalloy rather than a refractory metal as the pressure boundary. The NRPCT evaluated a variety of hot leg piping concepts for performance relative to SNPP system parameters, manufacturability, material considerations, and comparison to past high temperature gas reactor (HTGR) practice. Manufacturability challenges and the impact of pressure drop and turbine entrance temperature reduction on cycle efficiency were discriminators between the piping concepts. This paper summarizes the NRPCT hot leg piping evaluation, presents the concept recommended, and summarizes developmental issues for the recommended concept.

  7. Promethus Hot Leg Piping Concept

    SciTech Connect

    AM Girbik; PA Dilorenzo

    2006-01-24

    The Naval Reactors Prime Contractor Team (NRPCT) recommended the development of a gas cooled reactor directly coupled to a Brayton energy conversion system as the Space Nuclear Power Plant (SNPP) for NASA's Project Prometheus. The section of piping between the reactor outlet and turbine inlet, designated as the hot leg piping, required unique design features to allow the use of a nickel superalloy rather than a refractory metal as the pressure boundary. The NRPCT evaluated a variety of hot leg piping concepts for performance relative to SNPP system parameters, manufacturability, material considerations, and comparison to past high temperature gas reactor (HTGR) practice. Manufacturability challenges and the impact of pressure drop and turbine entrance temperature reduction on cycle efficiency were discriminators between the piping concepts. This paper summarizes the NRPCT hot leg piping evaluation, presents the concept recommended, and summarizes developmental issues for the recommended concept.

  8. Ferroelectric domain morphologies of (001) PbZr1-xTixO3 epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Li, Y. L.; Hu, S. Y.; Chen, L. Q.

    2005-02-01

    Ferroelectric domain morphologies in (001) PbZr1-xTixO3 epitaxial thin films were studied using the phase-field approach. The film is assumed to have a stress-free top surface and is subject to a biaxial substrate constraint. Both the electrostatic open-circuit and short-circuit boundary conditions on the film surfaces were considered. The phase-field simulations indicated that in addition to the known tetragonal and rhombohedral phases, an orthorhombic phase becomes stable in films under large tensile constraints. The orthorhombic domain structure contains (100) and (010) 90° domain walls and (110) and (1-10) 180° domain walls. For the rhombohedral phase in a thin film, the domain walls are found to be along {101}, (100), and (010) of the prototypical cubic cell. It is shown that the short-circuit boundary condition and compressive substrate constraint enhance the out-of-plane polarization component while the open-circuit boundary condition and tensile substrate constraint suppress it. It is also shown that the depolarization field promotes the formation of herringbonelike morphology for the rhombohedral phase.

  9. Small-signal theory of subterahertz overmoded surface wave oscillator with distributed wall loss

    NASA Astrophysics Data System (ADS)

    Wang, Guangqiang; Wang, Jianguo; Li, Shuang; Wang, Xuefeng

    2015-09-01

    A small-signal theory of the overmoded surface wave oscillator (SWO) with distributed wall loss is presented in this letter. The wall loss considered here includes the surface resistance and surface roughness. The cold and hot characteristics of 0.14 THz SWO are studied by the small-signal theory. Numerical results show that as the increase of wall loss, the working frequency decreases slightly, the rise time and startup time of oscillation increase significantly, and the output power decreases dramatically. Particle-in-cell (PIC) simulation confirms the prediction by the small-signal theory.

  10. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  11. Anisotropic mechanism on distinct transition modes of tip-activated multipolorizaion switching in epitaxial BiFeO3 films

    NASA Astrophysics Data System (ADS)

    Shi, Y. P.; Soh, A. K.; Weng, G. J.

    2011-01-01

    Based on the extended Kittel's law, an anisotropic mechanism has been developed to investigate the complex multipolarization switching in (001) and (110) epitaxial BiFeO3 films, under a biased-tip field. Switching inhomogeneity and domain wall width evolution have been specifically accounted for. It has been found that distinct switching modes, i.e., the breakdown mode of 71°-switched domain and the activation mode of 180°/109° switching, exist and dominate the switching orders within switching process. Our predicted switching orders show excellent agreements with the existing experimental data and phase-field results. A two-step procedure is also proposed to fabricate single-phase 71° ferroelastic domain array of controllable density using (001) BiFeO3 films, which is favored in practice to significantly enhance the magnetoelectric coupling and photovoltage.

  12. Axions from wall decay

    SciTech Connect

    Chang, S; Hagmann, C; Sikivie, P

    2001-01-08

    The authors discuss the decay of axion walls bounded by strings and present numerical simulations of the decay process. In these simulations, the decay happens immediately, in a time scale of order the light travel time, and the average energy of the radiated axions is {approx_equal} 7m{sub a} for v{sub a}/m{sub a} {approx_equal} 500. is found to increase approximately linearly with ln(v{sub a}/m{sub a}). Extrapolation of this behavior yields {approx_equal} 60 m{sub a} in axion models of interest.

  13. Gullies in Crater Wall

    NASA Technical Reports Server (NTRS)

    2004-01-01

    6 April 2004 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows gullies in the wall of a large impact crater in Newton Basin near 41.9oS, 158.1oW. Such gullies may have formed by downslope movement of wet debris--i.e., water. Unfortunately, because the responsible fluid (if there was one) is no longer present today, only the geomorphology of the channels and debris aprons can be used to deduce that water might have been involved. The image covers an area about 3 km (1.9 mi) across. Sunlight illuminates the scene from the upper left.

  14. Hot Gas Halos in Galaxies

    SciTech Connect

    Mulchaey, John S.; Jeltema, Tesla E.

    2010-06-08

    We use Chandra and XMM-Newton to study how the hot gas content in early-type galaxies varies with environment. We find that the L{sub X}-L{sub K} relationship is steeper for field galaxies than for comparable galaxies in groups and clusters. This suggests that internal processes such as supernovae driven winds or AGN feedback may expel hot gas from low mass field galaxies. Such mechanisms are less effective in groups and clusters where the presence of an intragroup or intracluster medium may confine outflowing material.

  15. CONTROL HOUSE, TRA620. MASONS ERECT PUMICE BLOCK WALLS. BUILDING WILL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONTROL HOUSE, TRA-620. MASONS ERECT PUMICE BLOCK WALLS. BUILDING WILL CONTROL ACCESS TO MTR AND OTHER "HOT" AND CLASSIFIED AREAS. INL NEGATIVE NO. 577. Unknown Photographer, 9/11/1950 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  16. Production of vertical arrays of small diameter single-walled carbon nanotubes

    DOEpatents

    Hauge, Robert H; Xu, Ya-Qiong

    2013-08-13

    A hot filament chemical vapor deposition method has been developed to grow at least one vertical single-walled carbon nanotube (SWNT). In general, various embodiments of the present invention disclose novel processes for growing and/or producing enhanced nanotube carpets with decreased diameters as compared to the prior art.

  17. Hot conditioning equipment conceptual design report

    SciTech Connect

    Bradshaw, F.W., Westinghouse Hanford

    1996-08-06

    This report documents the conceptual design of the Hot Conditioning System Equipment. The Hot conditioning System will consist of two separate designs: the Hot Conditioning System Equipment; and the Hot Conditioning System Annex. The Hot Conditioning System Equipment Design includes the equipment such as ovens, vacuum pumps, inert gas delivery systems, etc.necessary to condition spent nuclear fuel currently in storage in the K Basins of the Hanford Site. The Hot Conditioning System Annex consists of the facility of house the Hot Conditioning System. The Hot Conditioning System will be housed in an annex to the Canister Storage Building. The Hot Conditioning System will consist of pits in the floor which contain ovens in which the spent nuclear will be conditioned prior to interim storage.

  18. DEVELOPMENT OF METALLIC HOT GAS FILTERS

    SciTech Connect

    Anderson, I.E.; Gleeson, B.; Terpstra, R.L.

    2003-04-23

    Successful development of metallic filters with high temperature oxidation/corrosion resistance for fly ash capture is a key to enabling advanced coal combustion and power generation technologies. Compared to ceramic filters, metallic filters can offer increased resistance to impact and thermal fatigue, greatly improving filter reliability. A beneficial metallic filter structure, composed of a thin-wall (0.5mm) tube with uniform porosity (about 30%), is being developed using a unique spherical powder processing and partial sintering approach, combined with porous sheet rolling and resistance welding. Alloy choices based on modified superalloys, e.g., Ni-16Cr-4.5Al-3Fe (wt.%), are being tested in porous and bulk samples for oxide (typically alumina) scale stability in simulated oxidizing/sulfidizing atmospheres found in PFBC and IGCC systems at temperatures up to 850 C. Recent ''hanging o-ring'' exposure tests in actual combustion systems at a collaborating DOE site (EERC) have been initiated to study the combined corrosive effects from particulate deposits and hot exhaust gases. New studies are exploring the correlation between sintered microstructure, tensile strength, and permeability of porous sheet samples.

  19. Menopausal hot flashes: Randomness or rhythmicity

    NASA Astrophysics Data System (ADS)

    Kronenberg, Fredi

    1991-10-01

    Menopausal hot flashes are episodes of flushing, increased heart rate, skin blood flow and skin temperature, and a sensation of heat. The thermoregulatory and cardiovascular concomitants of hot flashes are associated with peaks in the levels of various hormones and neurotransmitters in the peripheral circulation. Although hot flashes affect about 75% of women, and are the primary reason that women at menopause seek medical attention, the mechanism of hot flashes is still not understood. Hot flashes vary in frequency and intensity both within and between individuals, and have been thought of as occurring randomly. Yet, some women report that their hot flashes are worse at a particular time of day or year. Initial examination of subjects' recordings of their hot flashes showed diurnal patterns of hot flash occurrence. There also seems to be a diurnal rhythm of hot flash intensity. Continuous physiological monitoring of hot flashes is facilitating the analysis of these patterns, which is revealing circadian and ultradian periodicities. The occurrence of hot flashes can be modulated by external and internal factors, including ambient temperature and fever. Rhythms of thermoregulatory and endocrine functions also may influence hot flash patterns. Examination of the interrelationships between the various systems of the body involved in hot flashes, and a multidisciplinary approach to the analysis of hot flash patterns, will aid our understanding of this complex phenomenon.

  20. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kim, Hyoungsub; Chui, Chi On; Saraswat, Krishna C.; McIntyre, Paul C.

    2003-09-01

    High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ˜55-Å ZrO2 film on a Ge (100) substrate using ZrCl4 and H2O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO2 and [100] Ge//[100] ZrO2] without a distinct interfacial layer, unlike the situation observed when ZrO2 is deposited using the same method on Si. Relatively large lattice mismatch (˜10%) between ZrO2 and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (>200 mV) and high frequency dispersion were observed in capacitance-voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density.

  1. An experimental investigation of straight and curved annular wall jets

    NASA Technical Reports Server (NTRS)

    Rodman, L. C.; Wood, N. J.; Roberts, L.

    1987-01-01

    Accurate turbulence measurements taken in wall jet flows are difficult to obtain, due to high intensity turbulence and problems in achieving two-dimensionality. The problem is compounded when streamwise curvature of the flow is introduced, since the jet entrainment and turbulence levels are greatly increased over the equivalent planar values. In this experiment, two-dimensional straight and curved incompressible wall jet flows are simulated by having a jet blow axially over a cylinder. Hot wire measurements and some Laser Doppler Velocimetry measurements are presented for straight and curved wall jet flows. The results for the straight wall showed good agreement between the annular flow data and the rectangular data taken by previous researchers. For the jets with streamwise curvature, there was agreement between the annular and corresponding rectangular jets for the flow region closest to the slot exit. An integral analysis was used as a simple technique to interpret the experimental results. Integral momentum calculations were performed for both straight and curved annular and two dimensional wall jets. The results of the calculation were used to identify transverse curvature parameters and to predict the values of those parameters which would delineate the region where the annular flow can satisfactorily simulate two dimensional flow.

  2. Surface morphological evolution of epitaxial CrN(001) layers

    SciTech Connect

    Frederick, J.R.; Gall, D.

    2005-09-01

    CrN layers, 57 and 230 nm thick, were grown on MgO(001) at T{sub s}=600-800 deg. C by ultrahigh-vacuum magnetron sputter deposition in pure N{sub 2} discharges from an oblique deposition angle {alpha}=80 deg. . Layers grown at 600 deg. C nucleate as single crystals with a cube-on-cube epitaxial relationship with the substrate. However, rough surfaces with cauliflower-type morphologies cause the nucleation of misoriented CrN grains that develop into cone-shaped grains that protrude out of the epitaxial matrix to form triangular faceted surface mounds. The surface morphology of epitaxial CrN(001) grown at 700 deg. C is characterized by dendritic ridge patterns extending along the orthogonal <110> directions superposed by square-shaped super mounds with <100> edges. The ridge patterns are attributed to a Bales-Zangwill instability while the supermounds form due to atomic shadowing which leads to the formation of epitaxial inverted pyramids that are separated from the surrounding layer by tilted nanovoids. Growth at 800 deg. C yields complete single crystals with smooth surfaces. The root-mean-square surface roughness for 230-nm-thick layers decreases from 18.8 to 9.3 to 1.1 nm as T{sub s} is raised from 600 to 700 to 800 deg. C. This steep decrease is due to a transition in the roughening mechanism from atomic shadowing to kinetic roughening. Atomic shadowing is dominant at 600 and 700 deg. C, where misoriented grains and supermounds, respectively, capture a larger fraction of the oblique deposition flux in comparison to the surrounding epitaxial matrix, resulting in a high roughening rate that is described by a power law with an exponent {beta}>0.5. In contrast, kinetic roughening controls the surface morphology for T{sub s}=800 deg. C, as well as the epitaxial fraction of the layers grown at 600 and 700 deg. C, yielding relatively smooth surfaces and {beta}{<=}0.27.

  3. On the development of turbulent boundary layer with wall transpiration

    NASA Astrophysics Data System (ADS)

    Ferro, Marco; Downs, Robert S., III; Fallenius, Bengt E. G.; Fransson, Jens H. M.

    2015-11-01

    An experimental study of the development of the transpired boundary layer in zero pressure gradient is carried out on a 6.4 m long hydrodynamically smooth and perforated plate. The relatively longer development length of the present perforated plate compared to the ones used in previous studies allows us to investigate whether an asymptotic suction boundary layer with constant thickness is achieved for the turbulent state, analogously to what happens in the laminar state. Velocity profiles are obtained via hot-wire anemometry while the wall shear stress is measured at several streamwise locations with hot-film and wall-wire probes as well as with oil-film interferometry. The threshold suction coefficient above which relaminarization starts to occur is examined. The scaling of the mean velocity and of higher order velocity moments is discussed in light of the measured wall shear stress data. Support from the European Research Council of the Advanced Fluid Research On Drag reduction in Turbulence Experiments (AFRODITE) is acknowledged.

  4. Solar Hot Water Hourly Simulation

    Energy Science and Technology Software Center (ESTSC)

    2009-12-31

    The Software consists of a spreadsheet written in Microsoft Excel which provides an hourly simulation of a solar hot water heating system (including solar geometry, solar collector efficiency as a function of temperature, energy balance on storage tank and lifecycle cost analysis).

  5. Solar hot-water system

    NASA Technical Reports Server (NTRS)

    1979-01-01

    Design data brochure describes domestic solar water system that uses direct-feed system designed to produce 80 gallons of 140 F hot water per day to meet needs of single family dwelling. Brochure also reviews annual movements of sun relative to earth and explains geographic considerations in collector orientation and sizing.

  6. Enviropower hot gas desulfurization pilot

    SciTech Connect

    Ghazanfari, R.; Feher, G.; Konttinen, J.; Ghazanfari, R.; Lehtovaara, A.; Mojtahedi, W.

    1994-11-01

    The objectives of the project are to develop and demonstrate (1) hydrogen sulfide removal using regenerable zinc titanate sorbent in pressurized fluidized bed reactors, (2) recovery of the elemental sulfur from the tail-gas of the sorbent regenerator and (3) hot gas particulate removal system using ceramic candle filters. Results are presented on pilot plant design and testing and modeling efforts.

  7. Production of hot-wires

    NASA Astrophysics Data System (ADS)

    Dickinson, S. C.

    1983-04-01

    Several methods for producing hot-wire probes are described. Discussion includes the manufacture of probe bodies, soldering plated wires to the prongs etching Walaston type wires, and finishing the probe. This report is written as an instruction manual for researchers who desire to produce or repair their own sensors.

  8. Solar Technician Program Blows Hot

    ERIC Educational Resources Information Center

    Ziegler, Peg Moran

    1977-01-01

    A training program for solar heating technicians was initiated at Sonoma State College's School of Environmental Studies for CETA applicants. Among the projects designed and built were a solar alternative energy center, a solar hot water system, and a solar greenhouse. (MF)

  9. Hot, Cold, and Really Cold.

    ERIC Educational Resources Information Center

    Leyden, Michael

    1997-01-01

    Describes a physics experiment investigating temperature prediction and the relationship between the physical properties of heat units, melting, dissolving, states of matter, and energy loss. Details the experimental setup, which requires hot and cold water, a thermometer, and ice. Notes that the experiment employs a deliberate counter-intuitive…

  10. Origins of Hot Jupiters, Revisited

    NASA Astrophysics Data System (ADS)

    Batygin, Konstantin; Bodenheimer, Peter; Laughlin, Greg

    2015-12-01

    Hot Jupiters, giant extrasolar planets with orbital periods less than ~10 days, have long been thought to form at large radial distances (a > 2AU) in protostellar disks, only to subsequently experience large-scale inward migration to the small orbital radii at which they are observed. Here, we propose that a substantial fraction of the hot Jupiter population forms in situ, with the Galactically prevalent short-period super-Earths acting as the source population. Our calculations suggest that under conditions appropriate to the inner regions of protostellar disks, rapid gas accretion can be initiated for solid cores of 10-20 Earth masses, in line with the conventional picture of core-nucleated accretion. This formation scenario leads to testable consequences, including the expectation that hot Jupiters should frequently be accompanied by additional planets, reminiscent of those observed in large numbers by NASA’s Kepler Mission and Doppler velocity surveys. However, dynamical interactions during the early stages of planetary systems' evolutionary lifetimes tend to increase the mutual inclinations of exterior, low-mass companions to hot Jupiters, making transits rare. High-precision radial velocity monitoring provides the best prospect for their detection.

  11. Origins of Hot Jupiters, Revisited

    NASA Astrophysics Data System (ADS)

    Batygin, Konstantin; Bodenheimer, Peter; Laughlin, Greg

    2016-05-01

    Hot Jupiters, giant extrasolar planets with orbital periods less than ~10 days, have long been thought to form at large radial distances (a > 2AU) in protoplanetary disks, only to subsequently experience large-scale inward migration to the small orbital radii at which they are observed. Here, we propose that a substantial fraction of the hot Jupiter population forms in situ, with the Galactically prevalent short-period super-Earths acting as the source population. Our calculations suggest that under conditions appropriate to the inner regions of protoplanetary disks, rapid gas accretion can be initiated for solid cores of 10-20 Earth masses, in line with the conventional picture of core-nucleated accretion. The planetary conglomeration process, coupled with subsequent gravitational contraction and spin down of the host star, drives sweeping secular resonances through the system, increasing the mutual inclinations of exterior, low-mass companions to hot Jupiters. Accordingly, this formation scenario leads to testable consequences, including the expectation that hot Jupiters should frequently be accompanied by additional non-transiting planets, reminiscent of those observed in large numbers by NASA’s Kepler Mission and Doppler velocity surveys. High-precision radial velocity monitoring provides the best prospect for their detection.

  12. Support pedestals for interconnecting a cover and nozzle band wall in a gas turbine nozzle segment

    DOEpatents

    Yu, Yufeng Phillip; Itzel, Gary Michael; Webbon, Waylon Willard; Bagepalli, Radhakrishna; Burdgick, Steven Sebastian; Kellock, Iain Robertson

    2002-01-01

    A gas turbine nozzle segment has outer and inner band portions. Each band portion includes a nozzle wall, a cover and an impingement plate between the cover and nozzle wall defining two cavities on opposite sides of the impingement plate. Cooling steam is supplied to one cavity for flow through the apertures of the impingement plate to cool the nozzle wall. Structural pedestals interconnect the cover and nozzle wall and pass through holes in the impingement plate to reduce localized stress otherwise resulting from a difference in pressure within the chamber of the nozzle segment and the hot gas path and the fixed turbine casing surrounding the nozzle stage. The pedestals may be cast or welded to the cover and nozzle wall.

  13. Direct Imaging of Thermally Driven Domain Wall Motion in Magnetic Insulators

    NASA Astrophysics Data System (ADS)

    Jiang, Wanjun; Upadhyaya, Pramey; Fan, Yabin; Zhao, Jing; Wang, Minsheng; Chang, Li-Te; Lang, Murong; Wong, Kin L.; Lewis, Mark; Lin, Yen-Ting; Tang, Jianshi; Cherepov, Sergiy; Zhou, Xuezhi; Tserkovnyak, Yaroslav; Schwartz, Robert N.; Wang, Kang L.

    2013-04-01

    Thermally induced domain wall motion in a magnetic insulator was observed using spatiotemporally resolved polar magneto-optical Kerr effect microscopy. The following results were found: (i) the domain wall moves towards hot regime; (ii) a threshold temperature gradient (5K/mm), i.e., a minimal temperature gradient required to induce domain wall motion; (iii) a finite domain wall velocity outside of the region with a temperature gradient, slowly decreasing as a function of distance, which is interpreted to result from the penetration of a magnonic current into the constant temperature region; and (iv) a linear dependence of the average domain wall velocity on temperature gradient, beyond a threshold thermal bias. Our observations can be qualitatively explained using a magnonic spin transfer torque mechanism, which suggests the utility of magnonic spin transfer torque for controlling magnetization dynamics.

  14. Preliminary safety analysis report for the Auxiliary Hot Cell Facility, Sandia National Laboratories, Albuquerque, New Mexico

    SciTech Connect

    OSCAR,DEBBY S.; WALKER,SHARON ANN; HUNTER,REGINA LEE; WALKER,CHERYL A.

    1999-12-01

    The Auxiliary Hot Cell Facility (AHCF) at Sandia National Laboratories, New Mexico (SNL/NM) will be a Hazard Category 3 nuclear facility used to characterize, treat, and repackage radioactive and mixed material and waste for reuse, recycling, or ultimate disposal. A significant upgrade to a previous facility, the Temporary Hot Cell, will be implemented to perform this mission. The following major features will be added: a permanent shield wall; eight floor silos; new roof portals in the hot-cell roof; an upgraded ventilation system; and upgraded hot-cell jib crane; and video cameras to record operations and facilitate remote-handled operations. No safety-class systems, structures, and components will be present in the AHCF. There will be five safety-significant SSCs: hot cell structure, permanent shield wall, shield plugs, ventilation system, and HEPA filters. The type and quantity of radionuclides that could be located in the AHCF are defined primarily by SNL/NM's legacy materials, which include radioactive, transuranic, and mixed waste. The risk to the public or the environment presented by the AHCF is minor due to the inventory limitations of the Hazard Category 3 classification. Potential doses at the exclusion boundary are well below the evaluation guidelines of 25 rem. Potential for worker exposure is limited by the passive design features incorporated in the AHCF and by SNL's radiation protection program. There is no potential for exposure of the public to chemical hazards above the Emergency Response Protection Guidelines Level 2.

  15. Hot outflows in galaxy clusters

    NASA Astrophysics Data System (ADS)

    Kirkpatrick, C. C.; McNamara, B. R.

    2015-10-01

    The gas-phase metallicity distribution has been analysed for the hot atmospheres of 29 galaxy clusters using Chandra X-ray Observatory observations. All host brightest cluster galaxies (BCGs) with X-ray cavity systems produced by radio AGN. We find high elemental abundances projected preferentially along the cavities of 16 clusters. The metal-rich plasma was apparently lifted out of the BCGs with the rising X-ray cavities (bubbles) to altitudes between twenty and several hundred kiloparsecs. A relationship between the maximum projected altitude of the uplifted gas (the `iron radius') and jet power is found with the form R_Fe ∝ P_jet^{0.45}. The estimated outflow rates are typically tens of solar masses per year but exceed 100 M⊙ yr- 1 in the most powerful AGN. The outflow rates are 10-20 per cent of the cooling rates, and thus alone are unable to offset a cooling inflow. Nevertheless, hot outflows effectively redistribute the cooling gas and may play a significant role at regulating star formation and AGN activity in BCGs and presumably in giant elliptical galaxies. The metallicity distribution overall can be complex, perhaps due to metal-rich gas returning in circulation flows or being blown around in the hot atmospheres. Roughly 15 per cent of the work done by the cavities is expended lifting the metal-enriched gas, implying their nuclear black holes have increased in mass by at least ˜107-109 M⊙. Finally, we show that hot outflows can account for the broad, gas-phase metallicity distribution compared to the stellar light profiles of BCGs, and we consider a possible connection between hot outflows and cold molecular gas flows discovered in recent Atacama Large Millimeter Array observations.

  16. Impact of hydrogen surfactant on crystallinity of Ge1-xSnx epitaxial layers

    NASA Astrophysics Data System (ADS)

    Asano, Takanori; Taoka, Noriyuki; Hozaki, Koya; Takeuchi, Wakana; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2015-04-01

    The effect of a hydrogen surfactant on the crystallinity of a Ge1-xSnx epitaxial layer was investigated. The improvement of crystallinity on the in-plane uniformity of Ge1-xSnx epitaxial layer was observed by X-ray diffuse scattering and transmission electron microscopy. We also observed the decrease in the surface roughness of the Ge1-xSnx epitaxial layer. This indicates the suppression of the three-dimensional growth mode of Ge1-xSnx epitaxial layer due to a compressive strain. In addition, we observed the reduction in acceptor-like defect density in an undoped-Ge1-xSnx epitaxial layer from the capacitance-voltage characteristics of a metal-oxide-semiconductor capacitor. Consequently, introducing hydrogen during the growth leads to the improvement of the crystalline quality of the Ge1-xSnx epitaxial layer.

  17. Ferroelastic twin structures in epitaxial WO{sub 3} thin films

    SciTech Connect

    Yun, Shinhee; Woo, Chang-Su; Lee, Jin Hong; Chu, Kanghyun; Kim, Gi-Yeop; Choi, Si-Young; Sharma, Pankaj; Seidel, Jan; Song, Jong Hyun; Chung, Sung-Yoon; Yang, Chan-Ho

    2015-12-21

    Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO{sub 3} single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic 〈100〉 axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic 〈110〉 axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ∼0.6 and ∼0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.

  18. Investigation of the growth of garnet films by liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Moody, J. W.; Shaw, R. W.; Sandfort, R. M.

    1974-01-01

    Liquid phase expitaxy was investigated to determine its applicability to fabricating magnetic rare earth garnet films for spacecraft data recording systems. Two mixed garnet systems were investigated in detail: (1) Gd-Y and (2) Eu-Yb-Y. All films were deposited on Gd3Ga5012 substrates. The uniaxial anisotropy of the Gd-Y garnets is primarily stress-induced. These garnets are characterized by high-domain wall mobility, low coercivity and modest anisotropy. Characteristic length was found to be relatively sensitive to temperature. The Eu-Yb-Y garnets exhibit acceptable mobilities, good temperature stability and reasonable quality factors. The uniaxial anisotropy of these garnets is primarily growth-induced. The system is well suited for compositional "tailoring" to optimize specific desirable properties. Liquid phase epitaxy can be used to deposit Gd3Ga5012 spacing layers on magnetic garnet films and this arrangement possesses certain advantages over more conventional magnetic filmspacing layer combinations. However, it cannot be used if the magnetic film is to be ion implanted.

  19. Ferroelectric domain structure of anisotropically strained NaNbO{sub 3} epitaxial thin films

    SciTech Connect

    Schwarzkopf, J. Braun, D.; Schmidbauer, M.; Duk, A.; Wördenweber, R.

    2014-05-28

    NaNbO{sub 3} thin films have been grown under anisotropic biaxial strain on several oxide substrates by liquid-delivery spin metalorganic chemical vapor deposition. Compressive lattice strain of different magnitude, induced by the deposition of NaNbO{sub 3} films with varying film thickness on NdGaO{sub 3} single crystalline substrates, leads to modifications of film orientation and phase symmetry, which are similar to the phase transitions in Pb-containing oxides near the morphotropic phase boundary. Piezoresponse force microscopy measurements exhibit large out-of-plane polarization components, but no distinctive domain structure, while C-V measurements indicate relaxor properties in these films. When tensile strain is provoked by the epitaxial growth on DyScO{sub 3}, TbScO{sub 3}, and GdScO{sub 3} single crystalline substrates, NaNbO{sub 3} films behave rather like a normal ferroelectric. The application of these rare-earth scandate substrates yields well-ordered ferroelectric stripe domains of the type a{sub 1}/a{sub 2} with coherent domain walls aligned along the [001] substrate direction as long as the films are fully strained. With increasing plastic lattice relaxation, initially, a 2D domain pattern with still exclusively in-plane electric polarization, and finally, domains with in-plane and out-of-plane polar components evolve.

  20. Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation

    NASA Astrophysics Data System (ADS)

    Heikman, S.; Keller, S.; Mishra, U. K.

    2006-08-01

    Vapor-phase epitaxy of GaN was performed by combining ammonia with gallium evaporated into an inert gas stream by a DC arc discharge, and letting the mixture pass through a pair of heated graphite susceptors. Growth rates as high as 30 μm/h were achieved. The growth on the top sample was specular in a large area, and was of high quality as characterized by atomic force microscopy and photoluminescence spectroscopy. The bottom sample had a high density of macroscopic defects, presumably caused by Ga droplets in the gas phase resulting from the arc evaporation process. The experimental growth rate was found to be less than {1}/{3} of values predicted in a computer flow dynamic model of the growth system, and Ga-NH 3 pre-reactions were implicated as the likely cause of the discrepancy. The growth efficiency, calculated to 2%, could arguably be improved by reducing the reactor growth pressure, and by changing the reactor geometry to avoid Ga condensation on walls. Potential advantages of the described growth technique are cheap source materials of high purity and low equipment costs. Furthermore, since no corrosive gasses were used, hardware corrosion and gas-phase impurities can be reduced.

  1. Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs

    NASA Astrophysics Data System (ADS)

    Fikry, M.; Ren, Z.; Madel, M.; Tischer, I.; Thonke, K.; Scholz, F.

    2013-05-01

    This work focuses on investigations of the luminescence properties of coaxial InGaN layers grown around single GaN micro and sub-micron tubes on top of GaN micro-pyramids. The tube structure was formed after the controlled desorption of ZnO nano-pillar templates during the coaxial GaN epitaxy. A thin layer near the area around the inner diameter of the micro-tube is believed to be heavily doped with Zn impurities leading to an intense and broad photoluminescence (PL) peak centered around 2.85 eV that quenches the luminescence from coaxial InGaN quantum wells (QWs). When the thickness of the GaN tube wall before the QW growth was doubled, a clear indication of In incorporation in low temperature PL was observed via an intense peak around 3.1 eV. Moreover, as the temperature of the QW growth was changed from 830 °C to 780 °C, a shift of the peak corresponding to an increase in In incorporation from 3.5% to 7.5% was noticed.

  2. Growth-induced electronic properties of epitaxial graphene

    NASA Astrophysics Data System (ADS)

    First, Phillip

    2012-02-01

    The growth of epitaxial graphene on silicon carbide is challenging to understand and control, yet rife with scientific and technological opportunities. This is due in part to different growth-induced structures such as the ``moire'' alignment of graphene layers in multilayer epitaxial graphene on SiC(0001) and the formation of sidewall ribbons at natural and lithographically-defined SiC(0001) step-bunches (nanofacets). We apply scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the local energy bands of such growth-induced structures. STS at cryogenic temperatures and large magnetic fields creates a comb of discrete Landau level energies that we use to quantitatively characterize the local electronic properties.

  3. Carrier Transport in Epitaxial Multi-layer Graphene

    NASA Astrophysics Data System (ADS)

    Lin, Yu-Ming; Dimitrakopoulos, Christos; Farmer, Damon; Han, Shu-Jen; Wu, Yanqing; Zhu, Wenjuan; Gaskill, D. Kurt; Tedesco, Joseph; Myers-Ward, Rachael; Eddy, Charles, Jr.; Grill, Alfred; Avouris, Phaedon; Ibm Team; Nrl Team

    2011-03-01

    Significant attention has been focused recently on the electrical properties of graphene grown epitaxially on SiC substrates, because it offers an ideal platform for carbon-based electronics using conventional top-down lithography techniques. The transport properties of graphene are usually studied via Hall effect measurements, which provide information on the carrier mobility and density. Hall measurements performed at a single magnetic field yield a weighted average of carrier mobility and density, and are strictly applicable to homogeneous samples. In this study, we performed variable-field Hall and resistivity measurements on epitaxial graphene, and the results were analyzed with a multi-carrier model. Good agreements were obtained between experimental data and the model, providing further evidence of multi-carrier transport in the C-face grown MLG. This work is supported by DARPA under contract FA8650-08-C-7838 through the CERA program and by the Office of Naval Research.

  4. Nanoscale electrical properties of epitaxial Cu3Ge film

    PubMed Central

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-01-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu. PMID:27363582

  5. Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.

  6. Phase-field model of island growth in epitaxy

    NASA Astrophysics Data System (ADS)

    Yu, Yan-Mei; Liu, Bang-Gui

    2004-02-01

    Nucleation and growth of islands in epitaxy is simulated using a continuum phase-field model. In addition to local density of adatoms, a local phase-field variable, varying in the real space, is introduced to describe the epitaxial islands. Evolution of this phase field is determined by a time-dependent Ginzburg-Landau-like equation coupled to a diffusive transport equation of adatoms. When applied to nucleation and growth of islands in the submonolayer regime, this model reproduces both the scaling laws of island density and experimental size and spatial distributions of islands. For island growth in the multilayer regime, this phase-field model reproduces mound structures consistent with experimental images concerned. Accurate coarsening and roughening exponents of the mounds are obtained in this model. Compared with atomic models and mean-field models, this model can provide a fine visualized morphology of islands at large space and time scales of practical engineering interests.

  7. Phase-field model of island growth in epitaxy.

    PubMed

    Yu, Yan-Mei; Liu, Bang-Gui

    2004-02-01

    Nucleation and growth of islands in epitaxy is simulated using a continuum phase-field model. In addition to local density of adatoms, a local phase-field variable, varying in the real space, is introduced to describe the epitaxial islands. Evolution of this phase field is determined by a time-dependent Ginzburg-Landau-like equation coupled to a diffusive transport equation of adatoms. When applied to nucleation and growth of islands in the submonolayer regime, this model reproduces both the scaling laws of island density and experimental size and spatial distributions of islands. For island growth in the multilayer regime, this phase-field model reproduces mound structures consistent with experimental images concerned. Accurate coarsening and roughening exponents of the mounds are obtained in this model. Compared with atomic models and mean-field models, this model can provide a fine visualized morphology of islands at large space and time scales of practical engineering interests. PMID:14995452

  8. Oxidized Monolayers of Epitaxial Silicene on Ag(111)

    PubMed Central

    Johnson, Neil W.; Muir, David I.; Moewes, Alexander

    2016-01-01

    The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate. PMID:26936144

  9. Growth and properties of epitaxial GdN

    SciTech Connect

    Ludbrook, B. M.; Kuebel, M.; Ruck, B. J.; Preston, A. R. H.; Trodahl, H. J.; Farrell, I. L.; Reeves, R. J.; Durbin, S. M.; Ranno, L.

    2009-09-15

    Epitaxial gadolinium nitride films with well-oriented crystallites of up to 30 nm have been grown on yttria-stabilized zirconia substrates using a plasma-assisted pulsed laser deposition technique. We observe that the epitaxial GdN growth proceeds on top of a gadolinium oxide buffer layer that forms via reaction between deposited Gd and mobile oxygen from the substrate. Hall effect measurements show the films are electron doped to degeneracy, with carrier concentrations of 4x10{sup 20} cm{sup -3}. Magnetic measurements establish a T{sub C} of 70 K with a coercive field that can be tuned from 200 Oe to as low as 10 Oe.

  10. Nanoengineering of Ruddlesden-Popper phases using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haeni, Jeffrey Hewlett

    Epitaxial films including superlattices of the A n+1BnO3 n+1 Ruddlesden-Popper homologous series with A=Sr and Ba and B=Ti and Ru have been grown by reactive molecular beam epitaxy (MBE) on (LaAlO3)0.3--(SrAl0.5Ta 0.5O3)0.7 (LSAT), SrTiO3, DyScO 3 and Si substrates. The strict composition control necessary for the synthesis of these phases was achieved through the use of reflection high-energy electron diffraction (RHEED) intensity oscillations. The first five members of the Srn+1 TinO3n+1 and the Sr n+1RunO3 n+1 Ruddlesden-Popper homologous series, i.e., Sr 2TiO4, Sr3Ti2O7, Sr 4Ti3O10, Sr5Ti4O13 , and Sr6Ti5O16, and Sr2RuO 4, Sr3Ru2O7, Sr4Ru 3O10, Sr5Ru4O13, and Sr 6Ru5O16, respectively, were grown with layer-by-layer deposition. Dielectric measurements indicate that the dielectric constant tensor coefficient epsilon33 of the Srn +1TinO3n +1 series increases from a minimum of 44 +/- 4 in the n = 1 (Sr2TiO4) film to a maximum of 263 +/- 2 in the n = infinity (SrTiO3) film. XPS measurements on Sr2TiO4/SrTiO3 heterostructures indicate a type II interface between the two materials, with a valence band offset of -0.40 +/- 0.1 eV, and a conduction band offset of -0.2 +/- 0.1 eV. Epitaxial SrTiO3 thin films grown on DyScO3 and LSAT substrates show dramatically different dielectric properties, as measured with interdigitated electrodes. The film on DyScO3 is under biaxial tensile strain and shows significant room temperature tunability and a sharp Curie-Weiss peak at 293 K. Under biaxial compressive strain, the SrTiO 3 exhibits negligible room temperature tunability. Epitaxial SrTiO3/BaTiO3 short period superlattices were grown with nearly atomically-abrupt interfaces that are maintained even after annealing to high temperature. In addition, cross-sectional TEM reveals that all superlattice periods grown are coherently strained to the underlying (001) SrTiO3 and (001) LSAT substrates. Epitaxial SrRuO3 layers were grown on Si (100) on which a thin epitaxial (Ba,Sr)O/SrSi2

  11. Investigation of optical properties of epitaxial yttrium iron garnet films

    NASA Astrophysics Data System (ADS)

    Paranin, V. D.

    2016-04-01

    In work we investigated yttrium iron garnet epitaxial films with a thickness of 10 µm and 55 µm which were grown on the surface of garnet substrate. Using the polarizing microscopy method the branching domain structure of films was shown with the period of domains 21.5 µm and 42.5 µm. Disappearance of domains at presence of an external magnetic field up to 100 Oe was noted. The optical transmission of films for the polarized beam of HeNe laser is investigated and zero diffraction order and odd diffraction rings orders were shown. Interconnection of the period of chaotically oriented domains with angles of axially symmetric diffraction rings orders was shown. Diffraction patterns at various longitudinal magnetic fields are investigated. Disappearance of odd diffraction orders and increasing in intensity of zero diffraction order were fixed. Optical transmission of epitaxial films was measured in range of 500 - 900 nm.

  12. Nanoscale electrical properties of epitaxial Cu3Ge film

    NASA Astrophysics Data System (ADS)

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-07-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu.

  13. Nanoscale electrical properties of epitaxial Cu3Ge film.

    PubMed

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-01-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu. PMID:27363582

  14. Growth and characterization of YAG:Cr4+epitaxial films

    NASA Astrophysics Data System (ADS)

    Ubizskii, Sergii B.; Syvorotka, Igor M.; Melnyk, Sergii S.; Matkovskii, Andrej O.; Kopczynski, Krzysztof; Mierczyk, Zygmunt; Frukacz, Zygmunt

    1999-03-01

    Epitaxial films with thickness of 10 - 250 micrometers of yttrium aluminum garnet (YAG) doped with Cr were grown by liquid phase epitaxy technique on YAG:Nd substrates. Co-doping with Mg2+ is used to force the Cr4+ valent state formation. Dependence of absorption spectra of obtained films on melt-solution composition, growth conditions and thermal treatment in reducing and oxidizing atmospheres is studied. A very intensive absorption band in UV region with maximum at 275 nm was found both in co-doped and YAG:Mg2+ epifilms caused probably by oxygen vacancies compensating the excess charge of Mg2+. Its intensity correlates with Cr4+ content in the film in that way: it decreases with Cr4+ entering in the film. The absorption being characteristic for YAG:Cr4+ crystals is found in co-doped films grown at higher temperatures (1000 - 1100 degree(s)C). The processes occurring during annealing are discussed.

  15. On the kinetic barriers of graphene homo-epitaxy

    SciTech Connect

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-12-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size.

  16. a Study of Epitaxial Growth of Calcium Fluoride on Silicon

    NASA Astrophysics Data System (ADS)

    Howard, L. K.

    Available from UMI in association with The British Library. The alkaline earth fluorides are good insulators at room temperature and have received significant attention as epitaxial dielectrics on semiconductors, their crystal structure and lattice parameters resembling those of common semiconductors. Such dielectrics enable passivation of semiconductors lacking stable oxides, isolation of devices on one substrate, and fabrication of 3-dimensional epitaxial heterostructures. The CaF_2/Si system was the structure investigated since the room temperature lattice mismatch is only 0.6%. A vacuum system was therefore developed for the deposition of CaF_2 onto silicon, and an RBS system, incorporating detector cooling, developed to establish the dependence of epitaxy on substrate temperature using channeling of 340 keV protons (giving an enhanced depth resolution and improved sensitivity to light elements compared to 2 MeV He^{+ } analysis). Epitaxial growth was obtained on n-type Si(111) and Si(100) substrates at 400-750 ^circC and 575-675^ circC respectively. A reaction between the CaF_2 and silicon occurred at higher temperatures producing non-uniform films. The epitaxy was also dependent on film thickness, the optimum de-channelled fractions obtained in the film of 8.25% and 15.2% for Si(111) and Si(100) substrates respectively were unobtainable for films under 1200 A. The insulator surface morphology was examined using Scanning Electron Microscopy. Epitaxial films on Si(111) were generally smooth, while preferential growth along <110> directions was observed for epitaxial insulators on Si(100), possibly due to slip along the (111) fluorite cleavage planes resulting from differences in the thermal expansion coefficients of CaF_2 and silicon and an increase in lattice mismatch with substrate temperature, although no cracking of the insulator was observed. The insulation and electrical properties of the films were investigated. Film resistivities upto 5E8 Omegacm and

  17. Highly ordered growth of PTCDA on epitaxial bilayer graphene

    NASA Astrophysics Data System (ADS)

    Meissner, Matthias; Gruenewald, Marco; Sojka, Falko; Udhardt, Christian; Forker, Roman; Fritz, Torsten

    2012-11-01

    For using the unique electronic properties of graphene in future nanoelectronic devices, control of the band structure is essential. While it has been shown already in the literature that this can be achieved by the deposition of organic molecules, little attention has been paid so far to the precise structural characterization of the interface. Here, we report on the epitaxial growth of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) layers on graphene, epitaxially grown on silicon carbide (SiC). The description of low energy electron diffraction (LEED) patterns of graphene on SiC by multiscattering is revisited. By means of a home-made algorithm used to correct radial distortions of the LEED images we are able to provide precise structural data of the PTCDA layers. By that, two different point-on-line types of PTCDA could be identified, one of which has neither been reported on graphite nor on graphene before.

  18. Anti-damping spin transfer torque through epitaxial nickel oxide

    SciTech Connect

    Moriyama, Takahiro; Nagata, Masaki; Yoshimura, Yoko; Matsuzaki, Noriko; Ono, Teruo; Takei, So; Tserkovnyak, Yaroslav; Terashima, Takahito

    2015-04-20

    We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO{sub 2} films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin current injection from the Pt by the spin Hall effect revealed the change of the ferromagnetic resonance linewidth depending on the amount of the spin current injection. The results can be interpreted that there is an angular momentum transfer through the NiO. A high efficient angular momentum transfer we observed in the epitaxial NiO can be attributed to the well-defined orientation of the antiferromagnetic moments and the spin quantization axis of the injected spin current.

  19. Epitaxial growth of VO{sub 2} by periodic annealing

    SciTech Connect

    Tashman, J. W.; Paik, H.; Merz, T. A.; Lee, J. H.; Moyer, J. A.; Schiffer, P.; Misra, R.; Mundy, J. A.; Spila, T.; Schubert, J.; Muller, D. A.; Schlom, D. G.

    2014-02-10

    We report the growth of ultrathin VO{sub 2} films on rutile TiO{sub 2} (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO{sub 2} via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

  20. Molecular Beam Epitaxy Growth of Iron Phthalocyanine Nanostructures

    SciTech Connect

    Debnath, A. K.; Samanta, S.; Singh, Ajay; Aswal, D. K.; Gupta, S. K.; Yakhmi, J. V.

    2009-06-29

    FePc films of different thickness have been deposited by molecular beam epitaxy (MBE) as a function of substrate temperature (25-300 deg. C) and deposition rate (0.02-0.07 nm/s). The morphology of a 60 nm alpha-phase film has been tuned from nanobrush (nearly parallel nanorods aligned normal to the substrate plane) to nanoweb (nanowires forming a web-like structure in the plane of the substrate) by changing the deposition rate from 0.02 to 0.07 nm/s. We propose growth mechanisms of nanoweb and nanobrush morphology based on the van der Waals (vdW) epitaxy. For air exposed FePc films I-V hysteresis was observed at 300 K and it is attributed to surface traps created by chemisorbed oxygen.