Science.gov

Sample records for hydrofluoric acid etching

  1. Technical grade hydrofluoric acid etch-back. Final report

    SciTech Connect

    Voltmann, R.

    1981-11-01

    Technical grade hydrofluoric acid (TG HF) was compared with analytical reagent grade hydrofluoric acid (AG HF) in the epoxy-glass etch-back process cycle of multilayer printed wiring board (PWB) fabrication. AG HF was in short supply and TG HF was evaluated as a substitute. The two acids were compared for depth of etch-back, completeness of glass fiber removal, and surface topography. Results show that TG HF could be used as an alternate material in this process without any changes in operating parameters.

  2. Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

    NASA Astrophysics Data System (ADS)

    Costescu, Ruxandra M.; Deneke, Christoph; Thurmer, Dominic J.; Schmidt, Oliver G.

    2009-12-01

    The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The etch suppression area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.

  3. Resin microtensile bond strength to feldspathic ceramic: hydrofluoric acid etching vs. tribochemical silica coating.

    PubMed

    Pelgia, Fernanda; Valandro, Luiz Felipe; Brigago, Vinicius; Neisser, Maximiliano Piero; Bottino, Marco A

    2007-01-01

    This study aimed to compare the microtensile bond strength of resin cement to alumina-reinforced feldspathic ceramic submitted to acid etching or chairside tribochemical silica coating. Ten blocks of Vitadur-alpha were randomly divided into 2 groups according to conditioning method: (1) etching with 9.6% hydrofluoric acid or (2) chairside tribochemical silica coating. Each ceramic block was luted to the corresponding resin composite block with the resin cement (Panavia F). Next, bar specimens were produced for microtensile testing. No significant difference was observed between the 2 experimental groups (Student ttest, P > .05). Both surface treatments showed similar microtensile bond strength values. PMID:17944345

  4. Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations

    NASA Astrophysics Data System (ADS)

    Bui, P. V.; Isohashi, A.; Kizaki, H.; Sano, Y.; Yamauchi, K.; Morikawa, Y.; Inagaki, K.

    2015-11-01

    Hydrofluoric acid (HF) etching of the SiC surface assisted by Pt as a catalyst is investigated using density functional theory. Etching is initiated by the dissociative adsorption of HF on step-edge Si, forming a five-fold coordinated Si moiety as a metastable state. This is followed by breaking of the Si-C back-bond by a H-transfer process. The gross activation barrier strongly correlates with the stability of the metastable state and is reduced by the formation of Pt-O chemical bonds, leading to an enhancement of the etching reaction.

  5. Characterization and adsorption properties of diatomaceous earth modified by hydrofluoric acid etching.

    PubMed

    Tsai, Wen-Tien; Lai, Chi-Wei; Hsien, Kuo-Jong

    2006-05-15

    This work was a study of the chemical modification of diatomaceous earth (DE) using hydrofluoric acid (HF) solution. Under the experimental conditions investigated, it was found that HF under controlled conditions significantly etched inward into the interior of the existing pore structure in the clay mineral due to its high content of silica, leaving a framework possessing a larger BET surface area (ca. 10 m2 g(-1)) in comparison with that (ca. 4 m2 g(-1)) of its precursor (i.e., DE). Further, the results indicated that the HF concentration is a more determining factor in creating more open pores than other process parameters (temperature, holding time, and solid/liquid ratio). This observation was also in close agreement with the examinations by the silicon analysis, scanning electron microscopy, X-ray diffraction, and Fourier transform infrared spectroscopy. The adsorption kinetics and the adsorption isotherm of methylene blue onto the resulting clay adsorbent can be well described by a pseudo-second-order reaction model and the Freundlich model, respectively. PMID:16364353

  6. Modelling of sacrificial spin-on glass (SOG) etching in non-straight microchannels using hydrofluoric acid

    NASA Astrophysics Data System (ADS)

    Hamzah, Azrul A.; Majlis, Burhanuddin Y.; Ahmad, Ibrahim

    2006-01-01

    This paper studies spin-on glass (SOG) etching in T-shaped microchannels by hydrofluoric acid (HF). Since oxide etching by HF in microchannels is both reaction and diffusion limited, an etching model based on non-first order chemical reaction/steady-state diffusion sacrificial layer etching mechanism is presented to compensate for the etching effect at channel junction. Microchannels are formed on silicon substrate by deep reactive ion etching (DRIE). Samples with channel depth varying from 1?m to 6 ?m are prepared by varying exposure time to reactant gas in DRIE chamber. Channel widths prior to the junction are varied from 2 ?m to 10 ?m while channel width beyond the junction is fixed at 5 ?m. The channels are then filled with SOG by multiple spin, bake and cure processes. After etchback planarization using 5% HF solution, the samples are coated with 1.5 ?m thick positive photoresist. An etch window is opened at channel fronts to expose underlying SOG. The samples are then time-etched in 5% HF solution and etch front propagation is observed under optical microscope through the transparent photoresist layer. It is observed that SOG etch rate in the microchannels is independent of channel width or channel depth. SOG etch rate at channel's T-junction is 0.67 times lower than etch rate in the straight channels preceding it due to HF concentration variation and etch product transfer rate variation effects. The proposed model fits experimental data well. Offset crosses vent pattern is determined as a good candidate for removing sacrificial oxide under an enclosed cap structure.

  7. Hydrofluoric acid poisoning

    MedlinePLUS

    Chemical Emergencies: Case Definition: Hydrofluoric Acid . Centers for Disease Control and Prevention, U.S. Dept of Health and Human Services; 2005. Goldfrank LR, ed. Goldfrank's Toxicologic Emergencies . 8th ed. New York, NY: McGraw Hill; 2006. Wax ...

  8. Micro-shear bond strength and surface micromorphology of a feldspathic ceramic treated with different cleaning methods after hydrofluoric acid etching

    PubMed Central

    STEINHAUSER, Henrique Caballero; TURSSI, Cecília Pedroso; FRANÇA, Fabiana Mantovani Gomes; do AMARAL, Flávia Lucisano Botelho; BASTING, Roberta Tarkany

    2014-01-01

    Objective The aim of this study was to evaluate the effect of feldspathic ceramic surface cleaning on micro-shear bond strength and ceramic surface morphology. Material and Methods Forty discs of feldspathic ceramic were prepared and etched with 10% hydrofluoric acid for 2 minutes. The discs were randomly distributed into five groups (n=8): C: no treatment, S: water spray + air drying for 1 minute, US: immersion in ultrasonic bath for 5 minutes, F: etching with 37% phosphoric acid for 1 minute, followed by 1-minute rinse, F+US: etching with 37% phosphoric acid for 1 minute, 1-minute rinse and ultrasonic bath for 5 minutes. Composite cylinders were bonded to the discs following application of silane and hydrophobic adhesive for micro-shear bond strength testing in a universal testing machine at 0.5 mm/min crosshead speed until failure. Stereomicroscopy was used to classify failure type. Surface micromorphology of each treatment type was evaluated by scanning electron microscopy at 500 and 2,500 times magnification. Results One-way ANOVA test showed no significant difference between treatments (p=0.3197) and the most common failure types were cohesive resin cohesion followed by adhesive failure. Micro-shear bond strength of the feldspathic ceramic substrate to the adhesive system was not influenced by the different surface cleaning techniques. Absence of or less residue was observed after etching with hydrofluoric acid for the groups US and F+US. Conclusions Combining ceramic cleaning techniques with hydrofluoric acid etching did not affect ceramic bond strength, whereas, when cleaning was associated with ultrasound, less residue was observed. PMID:24676577

  9. Corrosion Behavior of Nickel Alloys in Wet Hydrofluoric Acid

    SciTech Connect

    Rebak, R B

    2004-02-06

    Hydrofluoric acid is a water solution of hydrogen fluoride (HF). Hydrofluoric acid is used widely in diverse types of industrial applications; traditionally, it is used in pickling solutions in the metal industry, in the fabrication of chlorofluorocarbon compounds, as an alkylation agent for gasoline and as an etching agent in the industry of glass. In recent years, hydrofluoric acid has extensively been used in the manufacture of semiconductors and microelectronics during the wet chemical cleaning of silicon wafers. Hydrofluoric acid can be considered a reducing acid and although it is chemically classified as weaker than, for example, sulfuric or hydrochloric acids, it is extremely corrosive. This acid is also particularly toxic and poses greater health hazard than most other acids. The corrosion behavior of metals in hydrofluoric acid has not been as systematic studied in the laboratory as for other common inorganic acids. This is largely because tests using hydrofluoric acid cannot be run in standard equipment and because of the toxic nature of this acid. Moreover, short-term weight loss laboratory corrosion tests in hydrofluoric acid can be frustrating since the results are not as highly reproducible as in the case of other acids such as sulfuric or hydrochloric. One of the reasons is because hydrofluoric acid commonly attacks the coupons used for testing in a non-uniform manner. That is, the corrosive power of this acid is not aimed to uniform thinning but mostly to localized penetration below the skin of the metal in the form of thin cracks, voids, pits, trenches and sometimes intergranular attack. Figure 1 shows the cross section of a coupon of Alloy 600 (N06600) exposed for 336 h to the vapor phase of a solution of 20% HF at 93 C. In cases where internal penetration occurs such as in Figure 1, it may not be recommended to use corrosion rates based on weight loss for material selection.

  10. The research on conformal acid etching process of glass ceramic

    NASA Astrophysics Data System (ADS)

    Wang, Kepeng; Guo, Peiji

    2014-08-01

    A series of experiments have been done to explore the effect of different conditions on the hydrofluoric acid etching. The hydrofluoric acid was used to etch the glass ceramic called "ZERODUR", which is invented by SCHOTT in Germany. The glass ceramic was processed into cylindrical samples. The hydrofluoric acid etching was done in a plastic beaker. The concentration of hydrofluoric acid and the etching time were changed to measure the changes of geometric tolerance and I observed the surface using a microscope in order to find an appropriate condition of hydrofluoric acid etching.

  11. Geochemistry of Hydrofluoric Acid in Kaolinitic Soils

    SciTech Connect

    DENHAM, MILES

    2004-05-11

    This document explores the geochemical reactions likely to occur when hydrofluoric acid is spilled on Savannah River Site (SRS) soil. In particular, we evaluate the potential of environmental damage from a one-time release of concentrated hydrofluoric acid into a trench. According to interviews with personnel involved, sometime between 1955 and 1960 drums of 50-60 per cent hydrofluoric acid were disposed in a trench in the Central Shops area. The method of disposal suggests that most of the acid would have been released at the time of burial. No evidence of drum disposal or acidic pH values was found. Therefore, the Soil and Groundwater Closure Projects group requested that we evaluate potential risk by examining the major geochemical interactions expected between hydrofluoric acid and soil. The geochemical calculations in this report were done with The Geochemist's Workbench (Registered). This program uses an extended Debye-Huckel method for calculating activity coefficients. The conclusions of this report are accurate, but some of the intermediate steps may have higher uncertainty. Hydrofluoric acid disposed in a trench in the area would have reacted with soil kaolinite to neutralize the pH to a value of about 4.2. Based on conservative assumptions, this would have occurred within the top 500 cm of soil. This analysis considers only the reaction of the acid with kaolinite. Other processes such as dilution, dispersion, and clogging of permeability would contribute to neutralization of the acid within a shorter distance. When the acid solution reached the water table, dilution would have driven the solution to saturation with gibbsite. A resulting layer enriched in aluminum may be the only remnant of the acid disposal identifiable today. However, any such layer would be difficult to identify because of the normally high aluminum concentrations in the soil. Subtle textural evidence of shallow soil dissolution may be present, but 40 years of rainfall infiltration may well have erased such evidence.

  12. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    DOEpatents

    Hankins, Matthew G. (Albuquerque, NM)

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  13. Surface characteristics of dentin experimentally exposed to hydrofluoric acid.

    PubMed

    Pioch, Thomas; Jakob, Heiko; Garca-Godoy, Franklin; Gtz, Hermann; Drfer, Christof E; Staehle, Hans J

    2003-08-01

    The purpose of this study was to test the effect of hydrofluoric acid (HF) on the surface characteristics of dentin in vitro. Dentin was exposed in 50 human molars and divided into five groups according to different etching schedules: (i) no etching, (ii) 15 s HF, (iii) 15 s H3PO4, (iv) 15 s HF and 15 s H3PO4, (v) 15 s H3PO4 and 15 s HF. Teeth were examined under a scanning electron microscope equipped with energy-dispersive X-ray (EDX) or two layers of fluorescence-labeled primer followed by the composite were applied, and the teeth were sectioned and examined using confocal laser scanning microscopy (CLSM). With scanning electron microscopy, no openings of dentinal tubules were found in groups (i), (ii), and (iv). In group (v) only a few tubules were opened and in group (iii) the smear layer was completely removed and tubules appeared open. The EDX analysis revealed that fluoride was incorporated into the dentin surface when HF was used. With CLSM, distinct hybrid layers could be detected only in group (iii). In group (v) the hybrid layer appeared less established compared with group (iii). No dentin hybridization was found in groups (i), (ii), and (iv). It is concluded that HF has the ability to close the openings of dentin tubules which were opened due to etching by phosphoric acid and cannot dissolve the smear layer. PMID:12887403

  14. Hydrofluoric acid burns: a 15-year experience.

    PubMed

    Stuke, Lance E; Arnoldo, Brett D; Hunt, John L; Purdue, Gary F

    2008-01-01

    Hydrofluoric acid (HF) is a strong inorganic acid commonly used in many domestic and industrial settings. It is one of the most common chemical burns encountered in a burn center and frequently engenders controversy in its management. We report our 15 year experience with management of HF burns. We reviewed our experience from 1990 to 2005 for patients admitted with HF burns. Primary treatment was with calcium gluconate gel. Arterial infusion of calcium and fingernail removal were reserved for unrelenting symptoms. There were 7944 acute burn admissions to our center during this study period, 204 of which were chemical burns. HF burns comprised 17% of these chemical burn admissions (35 patients). All were men, with a mean burn size of 2.1 +/- 1.5% (range, 1-6%) and hospital stay of 1.6 +/- 0.7 days (range, 0-3 days). The most common seasonal time of injury was in the summer. Twelve patients (34%) were admitted to the intensive care unit for a total of 14 intensive care unit days, primarily for arterial infusions. Ventilator support was not required in any patient. No electrolyte abnormalities occurred. All burns were either partial thickness or small full thickness with no operative intervention required and no deaths. The upper extremity was most commonly involved (29 patients, 83%). The most common cause was air conditioner cleaner (8 patients, 23%). HF is a common cause of chemical burns. Although hospital admission is usually required for vigorous treatment and pain control, burn size is usually small and does not cause electrolyte abnormalities, significant morbidity, or death. PMID:18849854

  15. Hydrofluoric acid burn: latent period was key factor

    SciTech Connect

    Stencel, J.R.; Tobin, J.S.

    1987-07-01

    To clean oxidation from silver soldering on a copper component, a technician used a commercial solution containing 15% hydrofluoric acid. At 9:30 a.m., the technician finished the job. The solution was used for approximately 1 hr. He removed his protective clothing and washed up, but not thoroughly (since there was no indication of anything out of the ordinary). It was not until 5:30 p.m. that he felt a burning sensation in one hand and his fingers started turning white (indicative of an acid burn). Because of the one day lapse of time since the exposure, specific hydrofluoric acid emergency treatment was not given. The next morning he saw the hand surgeon who injected calcium gluconate into the burned area. Later the wounds were debrided. Serious damage to the fingers could have resulted had the hydrofluoric acid reached the bone. Fortunately, the hydrofluoric acid had not penetrated as far as expected and, after debridement of the upper tissue, only a few minor scars remained. Three months after the accident, his hand was still swollen, and the use and dexterity of his fingers had not fully returned. After seven months, dexterity had returned although some swelling remained.

  16. Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO

    NASA Astrophysics Data System (ADS)

    Zhang, Zhichun; Quemener, V.; Lin, C.-H.; Svensson, B. G.; Brillson, L. J.

    2013-08-01

    We used depth-resolved cathodoluminescence spectroscopy and transient photovoltage spectroscopy (T-SPS) measurements to study the spatial distributions and densities of native point defects in bulk ZnO samples subjected to mechanical polishing and how the defects change with hydrofluoric acid (HF) etching. Mechanical polishing produces Zn vacancy-related defects that deplete free carriers at depths extending to 300-500 nm, while HF etching removes/passivates these defects as well as bulk oxygen vacancy-related defects, restoring the charge carriers below the etched surface. T-SPS defect density changes with polishing/etching correlate closely with deep level transient spectroscopy densities, demonstrating the applicability of T-SPS as a non-contact quantitative defect density measurement technique.

  17. 40 CFR 415.80 - Applicability; description of the hydrofluoric acid production subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... hydrofluoric acid production subcategory. 415.80 Section 415.80 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS INORGANIC CHEMICALS MANUFACTURING POINT SOURCE CATEGORY Hydrofluoric Acid Production Subcategory 415.80 Applicability; description of...

  18. Evaluation of optimal reuse system for hydrofluoric acid wastewater.

    PubMed

    Won, Chan-Hee; Choi, Jeongyun; Chung, Jinwook

    2012-11-15

    The treatment of hydrofluoric acid (HF) wastewater has been an important environmental issue in recent years due to the extensive use of hydrofluoric acid in the chemical and electronics industries, such as semiconductor manufacturers. Coagulation/precipitation and ion exchange technologies have been used to treat HF wastewater, but these conventional methods are ineffective in removing organics, salts, and fluorides, limiting its reuse for water quality and economic feasibility. One promising alternative is reverse osmosis (RO) after lime treatment. Based on pilot-scale experiment using real HF wastewater discharged from semiconductor facility, the spiral wound module equipped with polyamide membranes has shown excellent flux and chemical cleaning cycles. Our results suggest that coagulation/precipitation and spiral wound RO constitute the optimal combination to reuse HF wastewater. PMID:23009792

  19. Hydrofluoric acid-resistant composite window and method for its fabrication

    DOEpatents

    Ostenak, C.A.; Mackay, H.A.

    1985-07-18

    A hydrofluoric acid-resistant composite window and method for its fabrication are disclosed. The composite window comprises a window having first and second sides. The first side is oriented towards an environment containing hydrofluoric acid. An adhesive is applied to the first side. A layer of transparent hydrofluoric acid-resistant material, such as Mylar, is applied to the adhesive and completely covers the first side. The adhesive is then cured.

  20. 40 CFR 415.80 - Applicability; description of the hydrofluoric acid production subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 28 2010-07-01 2010-07-01 true Applicability; description of the hydrofluoric acid production subcategory. 415.80 Section 415.80 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS INORGANIC CHEMICALS MANUFACTURING POINT SOURCE CATEGORY Hydrofluoric Acid...

  1. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Hydrofluoric acid, reaction...

  2. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Hydrofluoric acid, reaction...

  3. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Hydrofluoric acid, reaction...

  4. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Hydrofluoric acid, reaction...

  5. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Hydrofluoric acid, reaction...

  6. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Hydrofluoric acid, reaction...

  7. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Hydrofluoric acid, reaction...

  8. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Hydrofluoric acid, reaction...

  9. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Hydrofluoric acid, reaction...

  10. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Hydrofluoric acid, reaction...

  11. Treatment of hydrofluoric acid exposure to the eye

    PubMed Central

    Atley, Katherine; Ridyard, Edward

    2015-01-01

    AIM To review the current evidence of the treatment of hydrofluoric acid (HF) exposure to the human cornea. METHODS A comprehensive manual search of the literature was conducted through the Ovid interface to assess the mechanism and efficacy of each irrigator through a variety of clinical cases and experimental studies. RESULTS Ocular exposure to HF is extremely damaging to the eye and swift recognition and decontamination with an appropriate agent forms the basis of treatment. Although there are various decontamination solutions that have efficacy against the corrosive action of HF, irrigation with Hexafluorine proved to be the most safe and effective treatment for the eye. CONCLUSION In conclusion emergency departments could benefit from the availability of Hexafluorine for the treatment of HF ocular burns in patients. PMID:25709926

  12. Shear bond strength of metal brackets to feldspathic porcelain treated by Nd:YAG laser and hydrofluoric acid.

    PubMed

    Hosseini, Mohammad Hashem; Sobouti, Farhad; Etemadi, Ardavan; Chiniforush, Nasim; Shariati, Mahsa

    2015-02-01

    Adult orthodontic treatment requires bonding orthodontic attachment to dental restorations. Ceramics are commonly used as esthetic restorative materials for the crowns and bridges. The present study evaluated the shear bond strength of metal orthodontic brackets to the feldspathic porcelain surfaces following conditioning by different powers of neodymium-doped yttrium aluminum garnet (Nd:YAG) laser and hydrofluoric acid as a conventional method. Seventy-two glazed porcelain samples were prepared and randomly attributed to six equal groups of 12. In the conventional hydrofluoric (HF) group, the specimens were etched by 9.6% hydrofluoric acid for 4 min. In laser groups, samples were conditioned by 0.75-, 1-, 1.25-, 1.5-, and 2-W Nd:YAG laser for 10 s. Metal brackets were bonded to porcelain samples and after being stored in distilled water for 24 h, they were subjected to thermocycling for 500 cycles. The debonding was carried out by a Zwick testing machine. The data were statistically analyzed by ANOVA and Tamhane multiple comparisons tests. The mean SD of the shear bond strength in the laser group 0.75, 1, 1.25, 1.5, and 2 W and HF group was 2.2??0.9, 4.2??1.1, 4.9??2.4, 7??1.7, 9.6??2.7, and 9.4??2.5, respectively. Together with the increased power of laser, the mean shear bond strength was increased continuously and no significant differences were found between the HF group and the laser groups with power of 1.5 or 2 W. Also, there was no significant difference between all test groups in ARI scores. There was no significant difference between bond strength of laser groups with power of 1.5 and 2 W and HF-etched group. So, Nd:YAG laser with appropriate parameters can be used as an alternative method for porcelain etching. PMID:24142046

  13. Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects.

    PubMed

    Grant, Nicholas E

    2016-01-01

    A procedure to measure the bulk lifetime (>100 sec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 minusing a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<10(12) cm(-3)). PMID:26779939

  14. Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment

    NASA Astrophysics Data System (ADS)

    Zhao, Xiang-Fu; Han, Ping; Zhang, Rong; Zheng, You-Dou

    2011-08-01

    After immersion in hydrofluoric acid, the sheet resistance of a 220-nm-thick silicon nanomembrane, measured in dry air by van der Pauw method, drops around two orders of magnitude initially, then increases and reaches the level of a sample with a native oxide surface in about one month. The surface component and oxidation rate are also characterized by x-ray photo electronic spectroscopy measurement. Fluorine is found to play a significant role in improving conductivity and has no apparent influence on the oxidation rate after hydrofluoric acid treatment.

  15. Hydrofluoric Acid Corrosion Study of High-Alloy Materials

    SciTech Connect

    Osborne, P.E.

    2002-09-11

    A corrosion study involving high-alloy materials and concentrated hydrofluoric acid (HF) was conducted in support of the Molten Salt Reactor Experiment Conversion Project (CP). The purpose of the test was to obtain a greater understanding of the corrosion rates of materials of construction currently used in the CP vs those of proposed replacement parts. Results of the study will help formulate a change-out schedule for CP parts. The CP will convert slightly less than 40 kg of {sup 233}U from a gas (UF{sub 6}) sorbed on sodium fluoride pellets to a more stable oxide (U{sub 3}O{sub 8}). One by-product of the conversion is the formation of concentrated HF. Six moles of highly corrosive HF are produced for each mole of UF{sub 6} converted. This acid is particularly corrosive to most metals, elastomers, and silica-containing materials. A common impurity found in {sup 233}U is {sup 232}U. This impurity isotope has several daughters that make the handling of the {sup 233}U difficult. Traps of {sup 233}U may have radiation fields of up to 400 R at contact, a situation that makes the process of changing valves or working on the CP more challenging. It is also for this reason that a comprehensive part change-out schedule must be established. Laboratory experiments involving the repeated transfer of HF through 1/2-in. metal tubing and valves have proven difficult due to the corrosivity of the HF upon contact with all wetted parts. Each batch of HF is approximately 1.5 L of 33 wt% HF and is transferred most often as a vapor under vacuum and at temperatures of up to 250 C. Materials used in the HF side of the CP include Hastelloy C-276 and Monel 400 tubing, Haynes 230 and alloy C-276 vessels, and alloy 400 valve bodies with Inconel (alloy 600) bellows. The chemical compositions of the metals discussed in this report are displayed in Table 1. Of particular concern are the almost 30 vendor-supplied UG valves that have the potential for exposure to HF. These valves have been proven to have a finite life due to failure, most often at the bellows flange ring. It was discovered that the entire bellows assembly was not all alloy 600 but that alloy 600 bellows had been welded to a stainless steel alloy 316 (SS-316) flange ring. A previous study documents and addresses this problem.1 The fabricators of the valves immediately corrected the problem and began fabricating all wetted parts of the bellows assembly from alloy 600. At the same time, the fabricators began to make alloy C-276 valve bodies and stem tips available for sale. This material is known to be superior to the alloy 400 valve bodies and stem tips of the standard UG valves that had already been installed in the CP. A decision was made to purchase alloy C-276 bodies and stem tips and to change out those alloy 400 components that had already been installed. Due to the enormity of this task (both in terms of time and money), it was desirable to determine the longevity of alloy C-276 vs alloy 400 components in a side-by-side comparison. Also of interest was the question of how long the new (all-alloy 600) bellows would last in comparison with the original alloy 600/SS-316 bellows. A basic HF corrosion test was proposed to compare corrosion rates of several high-alloy materials. Because much of the alloy 400 in the system had been gold plated, some gold-plated alloy 400 coupons were included. Due to time and funding limitations, actual CP variables such as temperature and pressure were not duplicated. Instead, a simple partial-immersion test at ambient temperature was conducted. The purpose of this test was to gain information on the rate of corrosion of different alloys in the CP and to attempt to derive some idea of their expected lifetimes in the operating environment.

  16. Hydrofluoric Acid Corrosion Testing on Unplated and Electroless Gold-Plated Samples

    SciTech Connect

    Osborne, P.E.; Icenhour, A.S.; Del Cul, G.D.

    2000-08-01

    The Molten Salt Reactor Experiment (MSRE) remediation requires that almost 40 kg of uranium hexafluoride (UF6) be converted to uranium oxide (UO). In the process of this conversion, six moles of hydrofluoric acid (HP) are produced for each mole of UF6 converted.

  17. Detection of Hydrofluoric Acid by a SiO2 Sol-Gel Coating Fiber-Optic Probe Based on Reflection-Based Localized Surface Plasmon Resonance

    PubMed Central

    Chen, I-Cherng; Lin, Shiu-Shiung; Lin, Tsao-Jen; Du, Je-Kang

    2011-01-01

    A novel fiber-optic probe based on reflection-based localized surface plasmon resonance (LSPR) was developed to quantify the concentration of hydrofluoric acid (HF) in aqueous solutions. The LSPR sensor was constructed with a gold nanoparticle-modified PMMA fiber, integrated with a SiO2 sol-gel coating. This fiber-sensor was utilized to assess the relationship between HF concentration and SiO2 sol-gel layer etching reduction. The results demonstrated the LSPR sensor was capable of detecting HF-related erosion of hydrofluoric acid solutions of concentrations ranging from 1% to 5% using Relative RI Change Rates. The development of the LSPR sensor constitutes the basis of a detector with significant sensitivity for practical use in monitoring HF solution concentrations. PMID:22319388

  18. DFT study of the energetic and noncovalent interactions between imidazolium ionic liquids and hydrofluoric acid.

    PubMed

    Velarde, Marco V; Gallo, Marco; Alonso, P A; Miranda, A D; Dominguez, J M

    2015-04-16

    In this work, we evaluated the energetic interactions between imidazolium ionic liquids (ILs) and hydrofluoric acid, as well as the cation-anion interactions in ILs. We used DFT calculations that include dispersion corrections employing the PBE and M06 functionals. We tested 22 ILs, including [C4MIM][PF6], [C4MIM][NTf2], and [C4MIM][CH3COO], obtaining interaction energies in the range of -27 to -13 kcal/mol with the PBE functional. The NCI (noncovalent interaction) index developed by Yang and collaborators ( J. Am. Chem. Soc. 2010 , 132 , 6498 - 6506 ; J. Chem. Theory Comput. 2011 , 7 , 625 - 632 ) also was used for mapping the key noncovalent interactions (hydrogen bonds, van der Waals, and steric repulsions) between the anions and cations of ILs and also for interactions of ILs with hydrofluoric acid (HF). The results obtained show that the anions have a stronger effect with respect to cations in their capacity for interacting with hydrofluoric acid, and the strongest interaction energies occur in systems where the key noncovalent interactions are mainly hydrogen bonds. The [C4MIM][PF6], [C4MIM][NTf2], and [C4MIM][BF4] ionic liquids displayed the weakest cation-anion interactions. PMID:25803741

  19. Adhesion of resin composite to hydrofluoric acid-exposed enamel and dentin in repair protocols.

    PubMed

    Saracoglu, A; Ozcan, M; Kumbuloglu, O; Turkun, M

    2011-01-01

    Intraoral repairs of ceramic fixed-dental-prostheses (FDP) often include cervical recessions that require pretreatment of the exposed tooth surfaces either before or after the ceramic is conditioned with hydrofluoric (HF) acid gel. The sequence of repair protocol may cross-contaminate the exposed etched enamel or dentin surfaces during the application or rinsing process and thereby affect the adhesion. This study evaluated the influence of HF acid gel with two concentrations on bond strengths of composite to enamel and dentin. Human third molars (N=100, n=10 per group) with similar sizes were selected and randomly divided into 10 groups. Flat surfaces of enamel and dentin were created by wet ground finishing. Before or after the enamel (E) or dentin (D) was conditioned with phosphoric acid (P), substrate surfaces were conditioned with either 9.5% HF (HF(9.5)) or 5% HF (HF(5)). Subsequently, a bonding agent (B) was applied. The experimental groups by conditioning sequence were as follows where the first letter of the group abbreviation represents the substrate (E or D) followed by the acid type and concentration: group 1 (EPHF(9.5)), group 2 (EPHF(5)), group 3 (EHF(9.5)P), group 4 (EHF(5)P), group 5 (DPHF(9.5)), group 6 (DPHF(5)), group 7 (DHF(9.5)P), and group 8 (DHF(5)P). Group 9 (EPB) and group 10 (DPB) acted as the control groups. Repair resin was adhered incrementally onto the conditioned enamel and dentin in polyethylene molds. Each layer was photo-polymerized for 40 seconds. All specimens were thermocycled (1000, 5-55C) and subjected to shear test (universal testing machine, 1 mm/min). Specimens that debonded during thermocycling were considered as 0 MPa. The bond strength data were analyzed using Kruskal-Wallis test and failure types using the chi-square test (?=0.05). Overall, the bond results (MPa) were lower on dentin than on enamel (p<0.01). EPB (25.6 6.6) and DPB (20.2 4.9) control groups showed significantly higher results than those of other groups (p<0.05). While higher mean bond strengths were obtained in group 1 (EPHF(9.5)) (11.5 2.1) and group 2 (EPHF(5)) (7.3 0.6), lower results were obtained when HF acid gels were applied prior to phosphoric acid (EHF(9.5)P: 5.0 1.1, EHF(5)P: 3.6 0.1) (p<0.05). On dentin, the results were the lowest in group 8 (DHF(5)P: 1.5 1.6), being significantly lower than those of group 5 (DPHF(9.5)) (p<0.05). Scanning electron microscope (SEM) images revealed predominantly mixed failures with less than half of the composite left on both enamel and dentin surfaces (64 out of 80) (p<0.05), indicating that in general, adhesion was not ideal. Contamination of the enamel or dentin surfaces with HF acid gel impairs the bond strength of composites. Considering both the bond strength results and failure types, when dental tissues are to be repaired next to ceramic, application of phosphoric acid before HF acid gel application can be recommended. HF acid gel concentration did not influence the results except on enamel. PMID:21859315

  20. In situ optical measurements of hydrofluoric acid aerosols

    SciTech Connect

    Holve, D.J.; Harvill, T.L.; Schatz, K.W.; Koopman, R.P.; Mobil Research and Development Corp., Princeton, NJ; Lawrence Livermore National Lab., CA )

    1989-09-01

    HF aerosol measurements were obtained in a specially developed flow chamber with a cross-section of 8 {times} 16 feet, and approximately 140 feet long. The primary objective was to determine the extent of HF aerosol mist formation in a potential accidental release of HF. A newly developed in situ optical instrument (PCSV-P) was used to obtain on-line measurements of the aerosol. A total of 86 usable aerosol data sets were obtained during the test period. As many as 10 data sets were acquired for an 11 minute duration HF release. Briefly summarizing the results, the PCSV-P measured predominately submicron aerosols at the exit of the sharp-edged orifice. The aerosol then grew to larger particles at the outlet of the flow chamber. This result points to the formation of an aerosol through vaporization-condensation as opposed to a conventional shear spray. Temperature, humidity, release pressure, radial position in the plume, and type of acid did not appear to have an significant effect in the measured size distributions for the range of conditions investigated. 7 refs., 23 figs., 2 tabs.

  1. Quantitative analysis of mixed hydrofluoric and nitric acids using Raman spectroscopy with partial least squares regression.

    PubMed

    Kang, Gumin; Lee, Kwangchil; Park, Haesung; Lee, Jinho; Jung, Youngjean; Kim, Kyoungsik; Son, Boongho; Park, Hyoungkuk

    2010-06-15

    Mixed hydrofluoric and nitric acids are widely used as a good etchant for the pickling process of stainless steels. The cost reduction and the procedure optimization in the manufacturing process can be facilitated by optically detecting the concentration of the mixed acids. In this work, we developed a novel method which allows us to obtain the concentrations of hydrofluoric acid (HF) and nitric acid (HNO(3)) mixture samples with high accuracy. The experiments were carried out for the mixed acids which consist of the HF (0.5-3wt%) and the HNO(3) (2-12wt%) at room temperature. Fourier Transform Raman spectroscopy has been utilized to measure the concentration of the mixed acids HF and HNO(3), because the mixture sample has several strong Raman bands caused by the vibrational mode of each acid in this spectrum. The calibration of spectral data has been performed using the partial least squares regression method which is ideal for local range data treatment. Several figures of merit (FOM) were calculated using the concept of net analyte signal (NAS) to evaluate performance of our methodology. PMID:20441916

  2. Spinner For Etching Of Semiconductor Wafers

    NASA Technical Reports Server (NTRS)

    Lombardi, Frank

    1989-01-01

    Simple, inexpensive apparatus coats semiconductor wafers uniformly with hydrofluoric acid for etching. Apparatus made in part from small commercial electric-fan motor. Features bowl that collects acid. Silicon wafer placed on platform and centered on axis; motor switched on. As wafer spins, drops of hydrofluoric acid applied from syringe. Centrifugal force spreads acid across wafer in fairly uniform sheet.

  3. Dynamics of proton transfer and vibrational relaxation in dilute hydrofluoric acid.

    PubMed

    Joutsuka, Tatsuya; Ando, Koji

    2011-02-10

    The molecular mechanisms in both vibrational relaxation and proton transfer (PT) associated with infrared (IR)-induced PT in a dilute hydrofluoric acid solution at ambient temperature are studied by molecular dynamics (MD) simulations with the multistate empirical valence bond model. To investigate the solvation dynamics, a collective solvent coordinate and its perpendicular bath modes are defined from the diabatic energy gap and their motions are examined by the generalized Langevin equation (GLE) formalism. The GLE analysis using the equilibrium MD simulation shows that the major solvent reorganizations in the PT are represented by the libration and hindered translation. In particular, the libration gives the stronger coupling to the solvent reorganization and the faster relaxation. The nonequilibrium MD simulation demonstrated that both the HF stretching vibration and the solvent reorganization relax on a similar time scale and thus compete in the PT. It also supported the "presolvation mechanism" for the PT in this system. PMID:21210667

  4. Hydrofluoric acid burn resulting from ignition of gas from a compressed air duster.

    PubMed

    Foster, Kevin N; Jones, LouAnn; Caruso, Daniel M

    2003-01-01

    A young female suffered burns to her hand after the ignition of gas from a compressed air duster. After debridement and dressing, the patient continued to have pain out of proportion to injury that was refractory to intravenous morphine. The material safety data sheet revealed that the chemical used was 1,1-difluoroethane. High temperatures can cause decompensation to form hydrofluoric acid. Calcium gluconate gel was applied topically to the patient's burns, which caused prompt and complete relief of her pain. A review of different compressed air duster products revealed that the main ingredient in each was a halogenated hydrocarbon. Although not considered flammable, all products have warnings regarding the possibility of ignition under various circumstances. Ignition of the gas in compressed air cleaners not only can cause flame burns, it can also cause chemical damage from exposure to hydrogen and fluoride ions. Prompt recognition and treatment is necessary to prevent severe injury. PMID:14501419

  5. The Mechanism of Electropolishing of Niobium in Hydrofluoric-Sulfuric Acid Electrolyte

    SciTech Connect

    Tian, Hui; Corcoran, Sean; Reece, Charles; Kelley, Michael

    2008-07-01

    Niobium surfaces are commonly electropolished in an effort to obtain optimal smoothness for high-field superconducting radio-frequency cavity applications. We report the use of controlled electrochemical analysis techniques to characterize electropolishing of Nb in a sulfuric and hydrofluoric acid electrolyte. Through the use of a reference electrode, we are able to clearly distinguish the anode and cathode polarization potentials as well as the electrolyte voltage drop, which together sum to the applied power supply voltage. We then identify the temperature and HF concentration dependence of each potential. We also report the use of electrochemical impedance spectroscopy (EIS) on this system. EIS results are consistent with the compact salt film mechanism for niobium electropolishing (EP) in this electrolyte and are not consistent with either the porous salt film or the absorbate-acceptor mechanism. Microscopic understanding of the basic Nb EP mechanism is expected to provide an appro

  6. Occupational Hydrofluoric Acid Injury from Car and Truck Washing--Washington State, 2001-2013.

    PubMed

    Reeb-Whitaker, Carolyn K; Eckert, Carly M; Anderson, Naomi J; Bonauto, David K

    2015-08-21

    Exposure to hydrofluoric acid (HF) causes corrosive chemical burns and potentially fatal systemic toxicity. Car and truck wash cleaning products, rust removers, and aluminum brighteners often contain HF because it is efficient in breaking down roadway matter. The death of a truck wash worker from ingestion of an HF-based wash product and 48 occupational HF burn cases associated with car and truck washing in Washington State during 2001-2013 are summarized in this report. Among seven hospitalized workers, two required surgery, and all but one worker returned to the job. Among 48 injured workers, job titles were primarily auto detailer, car wash worker, truck wash worker, and truck driver. Because HF exposure can result in potentially severe health outcomes, efforts to identify less hazardous alternatives to HF-based industrial wash products are warranted. PMID:26292206

  7. Intra-Arterial Calcium Gluconate Treatment After Hydrofluoric Acid Burn of the Hand

    SciTech Connect

    Thomas, D. Jaeger, U.; Sagoschen, I.; Lamberti, C.; Wilhelm, K.

    2009-01-15

    Hydrofluoric acid (HF) is a colorless corrosive acid used in different industrial branches. Exposure to HF typically results from spills, and most often the hand or fingers are involved. Tissue damage through cutaneous HF exposure occurs through corrosive burns due to the free hydrogen ions and through skin penetration of the fluoride ions, causing a depletion of calcium in the deep tissue layers, ultimately leading to cell death and tissue necrosis. Treatment of HF burns consists of thoroughly flushing the exposed area with water and applying calcium gluconate gel to the skin. If topical treatment does not suffice, subcutaneous injections, as well as intravascular-both intravenous and intra-arterial-calcium gluconate therapy, have been advocated. We report for the first time a case of HF burn of the hand and digits associated with vasospasm. Pain and vasospasm were successfully treated by repeated intra-arterial calcium gluconate injection. We conclude that intra-arterial calcium gluconate injection is a successful and well-tolerated therapy for HF burn associated with Raynaud's syndrome. Intra-arterial injection allows for well-controlled delivery of therapy as well as assessment of the vascular status.

  8. EXAFS study of the speciation of protactinium(V) in aqueous hydrofluoric acid solutions.

    PubMed

    De Sio, Stéphanie M; Wilson, Richard E

    2014-12-01

    The speciation of protactinium(V) in hydrofluoric acid (HF) solutions was studied using X-ray absorption spectroscopy. Extended X-ray absorption fine structure measurements were performed on an aqueous solution of 0.05 M protactinium(V) with various HF concentrations ranging from 0.5 to 27 M in order to probe the protactinium coordination sphere with respect to the identity and number of coordinating ligands. The resulting fits to the spectra suggest the presence of an eight-coordinate homoleptic fluoro complex in highly concentrated fluoride solutions (27 M), with equilibrium between seven- and eight-coordinate fluoro complexes at moderate acidities, and in more dilute solutions, results indicate that one water molecule is likely to replace a fluoride in the first coordination sphere, at a distance of 2.54-2.57 Å. Comparisons of this chemistry with group V metals, niobium and tantalum, are presented, and the potential implications for these results on the hydrolytic behavior of protactinium in aqueous systems are discussed. PMID:25389749

  9. Fluorine distribution in soil in the vicinity of an accidental spillage of hydrofluoric acid in Korea.

    PubMed

    An, Jinsung; Lee, Hyun A; Lee, Junseok; Yoon, Hye-On

    2015-01-01

    This study assessed the status of fluorine (F) in soil in the vicinity of a spillage of anhydrous hydrofluoric acid in Korea. Gaseous hydrogen fluoride dispersed was suspected to have contaminated the surrounding soil environment. Total and water soluble F concentrations in soil within a 1 km radius of the spillage were determined. Total F concentrations (mean=22270.1 mg kg(-1)) were lower than the Korean limit value (i.e., 400 mg kg(-1)) and several reported measurements of background F concentrations in soils except for a single outlying case. Soluble F concentrations ranged from 0.111 to 6.40 mg kg(-1) (mean=2.201.80 mg kg(-1)). A negative correlation between the soluble F concentration of soil and distance from the spillage was observed. This indicates that the soluble F concentration has a crucial role in fractionating the F concentration arising from a 'non natural input' i.e., the spillage. The F content of rice samples seemed to be significantly influenced by the soluble F concentrations of soils. Rice samples collected from the control and affected areas contained 41 mg kg(-1) and 578 mg kg(-1) of total F, respectively. PMID:25128889

  10. NOVEL CHARACTERIZATION OF THE ELECTROPOLISHING OF NIOBIUM WITH SULFURIC AND HYDROFLUORIC ACID MIXTURES

    SciTech Connect

    Hui Tian; Charles Reece; Michael Kelley; Sean Corcoran

    2008-02-12

    Niobium surfaces are commonly electropolished in an effort to obtain optimally smooth surfaces for high-field SRF cavity applications. We report the first use of controlled electrochemical analysis techniques to characterize electropolishing of Nb in a sulfuric and hydrofluoric acid electrolyte. Through the use of a reference electrode we are able to clearly distinguish the anode, cathode polarization potentials as well as the electrolyte voltage drop that sum to the applied power supply voltage. We then separate the temperature and HF concentration dependence of each. We also report the first use of Electrochemical Impedance Spectroscopy (EIS) on this system. EIS results are consistent with a presence of a compact salt film at the Nb/electrolyte interface that is responsible for the limiting current. Microscopic understanding of the basic Nb EP mechanism is expected to provide an appropriate foundation with which to optimize the preparation of high-field niobium cavity surfaces. The implication of EIS for monitoring Nb surface during electropolishing shows this technology could be potentially used as a source of on-line feedback.

  11. Dermal absorption and skin damage following hydrofluoric acid exposure in an ex vivo human skin model.

    PubMed

    Dennerlein, Kathrin; Kiesewetter, Franklin; Kilo, Sonja; Jäger, Thomas; Göen, Thomas; Korinth, Gintautas; Drexler, Hans

    2016-04-25

    The wide industrial use of hydrofluoric acid (HF) poses a high risk for accidental dermal exposure. Despite local and systemic hazards associated with HF, information on percutaneous penetration and tissue damage is rare. In the present ex vivo study, the dermal absorption of HF (detected in terms of fluoride ions) was quantified and the skin damaging potential as a function of concentration and exposure duration was assessed. Percutaneous penetration of HF (c=5, 30, and 50%) at 3 exposure durations (3, 5, and 10min) was investigated in a static diffusion cell model using freshly excised human skin. Alterations of skin were histologically evaluated. HF rapidly penetrated through skin under formation of a considerable intradermal reservoir (∼13-67% of total absorbed fluoride). Histologically, epidermal alterations were detected already after exposure to 5% HF for 3min. The degree of skin damage increased with rising concentration and exposure duration leading to coagulation necrosis. For HF concentrations of ≥30%, skin damage progressed into deeper skin layers. Topically applied HF concentration was the principal parameter determining HF induced skin effects. The intradermal HF retention capacity associated with progression and prolongation of HF induced skin effects must be considered in the review of skin decontamination procedures. PMID:26930472

  12. Comparison of skin effects of immediate treatment modalities in experimentally induced hydrofluoric acid skin burns.

    PubMed

    Songur, Meltem K; Akdemir, Ovunc; Lineaweaver, William C; Cavusoglu, Turker; Ozsarac, Murat; Aktug, Huseyin; Songur, Ecmel; Tiftikcioglu, Yigit O

    2015-12-01

    Hydrofluoric acid (HF) burns cause immediate damage and painful long-term sequellae. Traditionally, chelating agents have been used as the initial treatment for such burns. We have introduced epidermal growth factor (EGF) into an HF model to compare EGF with Ca(2+) and Mg(2+) treatments; 40 Sprague Dawley rats were divided into five groups. Each rat suffered a 6 4 cm(2) burn induced by 40% HF. Group 1 had no treatment, group 2 had saline injected beneath the burn, group 3 received magnesium sulphate injections, group 4 received calcium gluconate and group 5 received EGF. Specimens were evaluated via planimetry and biopsy at intervals of 4, 8, 24 and 72 hours. Fluid losses were significantly less in the Mg(2+) and EGF groups. The EGF group had the smallest burn area, least oedema, least polymorphonuclear granulocyte (PMN) infiltration, most angiogenesis and highest fibroblast proliferation of any group (P < 0005). EGF limited HF damage morphologically and histologically more effectively than Ca(2+) or Mg(2+). This finding indicates that HF treatment via growth factors may be an improvement over chelation therapy. PMID:24618130

  13. Hydrofluoric Acid Corrosion Testing on Unplated and Electroless Gold-Plated Samples

    SciTech Connect

    Osborne, P.E.

    2000-08-03

    The Molten Salt Reactor Experiment (MSRE) remediation requires that almost 40 kg of uranium hexafluoride (UF{sub 6}) be converted to uranium oxide (U{sub 3}O{sub 8}). In the process of this conversion, six moles of hydrofluoric acid (HF) are produced for each mole of UF{sub 6} converted. The entire conversion process can be summarized by the following reaction: UF{sub 6} + 3H{sub 2}O {yields} UO{sub 3} + 6HF. (The UO{sub 3} is not stable at high temperatures and therefore decomposes to U{sub 3}O{sub 8}). HF is well known for its ability to attack most metals and silica-containing compounds. It reacts rapidly to destroy protective films and can be fatal in very small quantities (e.g., 2% exposure of the body or 50 ppm in air). Because most of the conversion system is made of various metals, the sections that come in contact with HF must be able to withstand corrosion, high temperatures, elevated pressures, and radiation. Consequently, most of these sections will be plated with gold for increased protection of the metal. This report summarizes the results from the tests that were performed on the metal samples. Section 2 covers the approach to the tests, gives a general background of the sample preparation, and then reports the data from the tests. The final section presents a discussion of what was learned from the data and recommendations for uses of these metals in the MSRE conversion process.

  14. Acute health effects in a community after a release of hydrofluoric acid

    SciTech Connect

    Wing, J.S.; Brender, J.D.; Sanderson, L.M.; Perrotta, D.M.; Beauchamp, R.A. )

    1991-05-01

    {approximately} 3,000 persons were evacuated from a Texas community after 24,036 kg (53,000 lb) of caustic hydrofluoric acid (HF) were released from a nearby petrochemical plant. Emergency room and hospital records of 939 persons who were seen at two area hospitals were reviewed. Most persons who presented at the emergency rooms were female (56%) or black (60%), and their mean age was 33.9 y. The most frequently reported symptoms were eye irritation (41.5%), burning throat (21%), headache (20.6%), and shortness of breath (19.4%). Physical examination results were normal for 49% of the cases; however, irritation of the eyes, nose, throat, skin, and lungs were noted on other exams. Decreased pulmonary function was demonstrated by pulmonary function tests (forced expiratory volume in the first second, less than 80% of predicted value, 42.3%); hypoxemia (pO2 less than 80 mm Hg, 17.4%) and hypocalcemia (less than 8.5 mg/dl, 16.3%) were also noted. Ninety-four (10%) of the cases were hospitalized, and more than 83% of all cases were discharged with a primary diagnosis of HF exposure. There are several reports of individuals who are acutely and chronically exposed to HF; however, we are unaware of other published reports that describe exposure of a community to HF. This incident represented a unique opportunity to study the immediate health impact on a community of residents who were exposed to a hazardous materials release. Results of this analysis suggest that (a) initial health problems should be followed up, (b) any long-term health effects of HF exposure must be assessed, and (c) the health impact on the population at risk should be determined.

  15. Development of a continuous process for adjusting nitrate, zirconium, and free hydrofluoric acid concentrations in zirconium fuel dissolver product

    SciTech Connect

    Cresap, D.A.; Halverson, D.S.

    1993-04-01

    In the Fluorinel Dissolution Process (FDP) upgrade, excess hydrofluoric acid in the dissolver product must be complexed with aluminum nitrate (ANN) to eliminate corrosion concerns, adjusted with nitrate to facilitate extraction, and diluted with water to ensure solution stability. This is currently accomplished via batch processing in large vessels. However, to accommodate increases in projected throughput and reduce water production in a cost-effective manner, a semi-continuous system (In-line Complexing (ILC)) has been developed. The major conclusions drawn from tests demonstrating the feasibility of this concept are given in this report.

  16. Solution of rocks and refractory minerals by acids at high temperatures and pressures. Determination of silica after decomposition with hydrofluoric acid

    USGS Publications Warehouse

    May, I.; Rowe, J.J.

    1965-01-01

    A modified Morey bomb was designed which contains a removable nichromecased 3.5-ml platinium crucible. This bomb is particularly useful for decompositions of refractory samples for micro- and semimicro-analysis. Temperatures of 400-450?? and pressures estimated as great as 6000 p.s.i. were maintained in the bomb for periods as long as 24 h. Complete decompositions of rocks, garnet, beryl, chrysoberyl, phenacite, sapphirine, and kyanite were obtained with hydrofluoric acid or a mixture of hydrofluoric and sulfuric acids; the decomposition of chrome refractory was made with hydrochloric acid. Aluminum-rich samples formed difficultly soluble aluminum fluoride precipitates. Because no volatilization losses occur, silica can be determined on sample solutions by a molybdenum-blue procedure using aluminum(III) to complex interfering fluoride. ?? 1965.

  17. Acid-etched Fabry-Perot micro-cavities in optical fibres

    NASA Astrophysics Data System (ADS)

    Machavaram, V. R.; Badcock, R. A.; Fernando, G. F.

    2007-07-01

    Significant progress has been made in recent years on the design and fabrication of optical fibre-based sensor systems for applications in structural health monitoring. Two sensor designs have tended to dominate namely, fibre Bragg gratings and extrinsic fibre Fabry-Perot sensors. However, the cost and time associated with these sensors is relatively high and as a consequence, the current paper describes a simple procedure to fabricate intrinsic fibre Fabry-Perot interferometric strain sensors. The technique involves the use of hydrofluoric acid to etch a cavity in a cleaved optical fibre. Two such etched cavities were fusion spliced to create an intrinsic fibre Fabry-Perot cavity. The feasibility of using this device for strain monitoring was demonstrated. Excellent correlation was obtained between the optical and surface-mounted electrical resistance strain gauge.

  18. Development of a Multiplex Fabry-Perot Interferometer and Measurement of Atmospheric Hydrofluoric Acid and Hydrochloric Acid

    NASA Astrophysics Data System (ADS)

    Snell, Hilary Edmund

    Remote sensing of major and minor constituents in the earth's atmosphere is of great importance to the study of climate and global change. Because much of remote sensing involves placing instrumentation in environments that are not easily accessible, such as balloons, spacecraft, or remote field stations, it is usually necessary that the instrumentation be compact, lightweight, and rugged. This thesis describes the development of a new type of remote sensing instrument and measurements of trace gases in the earth's atmosphere. The Multiplex Fabry-Perot Interferometer (MFPI) consists of a Fabry-Perot interferometer in which the etalon plate separation is changed over a large optical distance. Fourier -transformation of the resultant interferogram allows one to treat the multiple reflections within the etalon cavity in a manner analogous to an array of Michelson-type interferometers. However, even for high spectral resolution measurements the scan distance required by the MFPI is much less than for the comparable Michelson. The MFPI will be ideal for remote sensing applications where weight, size, and mechanical reliability are primary considerations. Hydrofluoric acid (HF) and hydrochloric acid (HCl) are important fluorine and chlorine reservoir species in the atmosphere. We have measured the column density of HF and HCl using the techniques of solar absorption spectroscopy and their spectral lines at 4038.962 cm^ {-1} and 2925.897 cm^{ -1}. Our measurements consistently show that the HCl line is asymmetric. While previously published measurements of HCl by other groups using this spectral line claim that the asymmetry is instrumental in nature, our measurements indicate that it is caused by spectral contamination.

  19. The removal torque of titanium screw inserted in rabbit tibia treated by dual acid etching.

    PubMed

    Cho, Sung-Am; Park, Kyung-Tae

    2003-09-01

    Chemical acid etching alone of the titanium implant surface have the potential to greatly enhance osseointegration without adding particulate matter (e.g. TPS or hydroxyapatite) or embedding surface contaminants (e.g. grit particles). The aims of the present study were to evaluate any differences between the machined and dual acid etching implants with the removal torque as well as topographic analysis. A total of 40 custom-made, screw-shaped, commercially pure titanium implants with length of 5 mm and an outer diameter of 3.75 mm were divided into 4 groups, 10 screws in each, and chemical modification of the titanium implant surfaces were achieved using HF and HCl/H(2)SO(4) dual acid etching. The first exposure was to hydrofluoric acid and the second was to a combination of hydrochloric acid and sulfuric acid. The tibia metaphysics was exposed by incisions through the skin, fascia, and periosteum. One implant of each group was inserted in every rabbit, 2 in each proximal tibia metaphysics. Every rabbit received 3 implants with acid etched surfaces and 1 implant with a machined surface. Twelve weeks post-surgically, 7 rabbits were sacrificed, Subsequently, the leg was stabilized and the implant was removed under reverse torque rotation with a digital torque gauge (Mark-10 Corporation, USA) (Fig. 1). Twelve weeks after implant placement, the removal torque mean values were the dual acid etched implants (24%HF+HCl/H(2)SO(4), group C) required a higher average force (34.7 Ncm), than the machined surface implants (group A) (p=0.045) (Mann-Whiteney test). Scanning electron micrographs of acid etching of the titanium surface created an even distribution of very small (1-2 microm) peaks and valleys, while machining of the titanium surface created typical microscopically grooved surface characteristics. Nonetheless, there was no difference in surface topography between each acid etched implant groups. Therefore, chemically acid etching implant surfaces have higher strengths of osseointegration than machined implant surfaces. There is less correlation between removal torque and the difference in HF volume%. PMID:12809791

  20. Hydrofluoric-nitric-sulphuric-acid surface treatment of tungsten for carbon fibre-reinforced composite hybrids in space applications

    NASA Astrophysics Data System (ADS)

    Kanerva, M.; Johansson, L.-S.; Campbell, J. M.; Revitzer, H.; Sarlin, E.; Brander, T.; Saarela, O.

    2015-02-01

    Hybrid material systems, such as combinations of tungsten foils and carbon fibre-reinforced plastic (CFRP), are replacing metal alloy concepts in spacecraft enclosures. However, a good adhesion between the tungsten oxide scale and the epoxy resin used is required. Here, the effects of a hydrofluoric-nitric-sulphuric-acid (HFNS) treatment on tungsten oxides and subsequent adhesion to CFRP are analysed using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and fracture testing. The work shows that HFNS treatment results in decreased oxygen content, over 50% thinner tungsten trioxide (WO3) layer and increased nano-roughness on thin tungsten foils. Fracture testing established a 39% increase in the average critical strain for tungsten-CFRP specimens after HFNS treatment was carried out on tungsten. The effect of the oxide scale modification regarding the critical strain energy release rate was ?Gc? 8.4 J/m2.

  1. Shear bond strength of resin cement to an acid etched and a laser irradiated ceramic surface

    PubMed Central

    Motro, Pelin Fatma Karagoz; Yurdaguven, Haktan

    2013-01-01

    PURPOSE To evaluate the effects of hydrofluoric acid etching and Er,Cr:YSGG laser irradiation on the shear bond strength of resin cement to lithium disilicate ceramic. MATERIALS AND METHODS Fifty-five ceramic blocks (5 mm 5 mm 2 mm) were fabricated and embedded in acrylic resin. Their surfaces were finished with 1000-grit silicon carbide paper. The blocks were assigned to five groups: 1) 9.5% hydrofluoric-acid etching for 60 s; 2-4), 1.5-, 2.5-, and 6-W Er,Cr:YSGG laser applications for 60 seconds, respectively; and 5) no treatment (control). One specimen from each group was examined using scanning electron microscopy. Ceramic primer (Rely X ceramic primer) and adhesive (Adper Single Bond) were applied to the ceramic surfaces, followed by resin cement to bond the composite cylinders, and light curing. Bonded specimens were stored in distilled water at 37? for 24 hours. Shear bond strengths were determined by a universal testing machine at 1 mm/min crosshead speed. Data were analyzed using Kruskal-Wallis and Mann-Whitney U-tests (?=0.05). RESULTS Adhesion was significantly stronger in Group 2 (3.88 1.94 MPa) and Group 3 (3.65 1.87 MPa) than in Control group (1.95 1.06 MPa), in which bonding values were lowest (P<.01). No significant difference was observed between Group 4 (3.59 1.19 MPa) and Control group. Shear bond strength was highest in Group 1 (8.42 1.86 MPa; P<.01). CONCLUSION Er,Cr:YSGG laser irradiation at 1.5 and 2.5 W increased shear bond strengths between ceramic and resin cement compared with untreated ceramic surfaces. Irradiation at 6 W may not be an efficient ceramic surface treatment technique. PMID:23755333

  2. Rapid analysis of acid in etching and pickling solutions

    SciTech Connect

    Tumbina, V.P.; Chinokalov, V.Ya.

    1995-02-01

    A computational method for determining sulfuric and hydrochloric acids in two-component etching solutions has been proposed. The method makes use of linear relationships, assuming that the sum of free and bound acid in solution remains constant.

  3. Comparative behavior of titanium and zirconium in hydrofluoric-nitric acid pickling solutions

    SciTech Connect

    Sutter, E.M.M.; Hlawka, F.; Cornet, A. )

    1990-07-01

    The different behavior of titanium and zirconium in HF-HNO{sub 3} pickling solutions has been studied using electrochemical methods and Raman spectrometry. In each case, the depleting of the solutions during a pickling experiment could be correlated with the consumption of HF to form metal oxo or oxofluoro complexes. However, the mechanism of metal dissolution is quite different for the two metals. The titanium dissolution process in such solutions can be interpreted using a passivation model in which dissolution and passivation are two competing reactions at the surface of the bare metal. On the other hand, zirconium dissolution occurs through formation of an oxide film with ionic diffusion through the film being a rate-determining step. The particular role of strong acid added to the HF solution for pickling of titanium and zirconium is also discussed.

  4. HYDROFLUORIC ACID SCRUBBER SYSTEMS

    SciTech Connect

    PANESKO JV; MERRITT HD

    2011-05-18

    Each year over a million gallons of water are used to scrub hydrogen fluoride (HP) vapors from waste off-gas streams. Use of other potential scrubber solutions such as potassium hydroxide (KOH), aluminum nitrate nonahydrate (ANN), and monobasic aluminum nitrate (monoban) would result in significant volume reductions. A laboratory study was initiated to (1) demonstrate the effectiveness of these scrubber solutions to sorb HF, (2) determine if unexpected reactions occurred at flowsheet conditions, and (3) determine the consequences of deviation from flowsheet conditions. Caustic or aluminum scrubber solutions remove hydrogen fluoride from off-gas streams. Solids which appear with aluminum could be avoided by heating the scrubber solution.

  5. Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

    SciTech Connect

    Khuat, Vanthanh; Chen, Tao; Gao, Bo; Si, Jinhai Ma, Yuncan; Hou, Xun

    2014-06-16

    Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

  6. Orthodontic bonding to acid- or laser-etched prebleached enamel

    PubMed Central

    Ozdemir, Fulya; Cakan, Umut; Gonul, Nese

    2013-01-01

    Objective Bonding forces of brackets to enamel surfaces may be affected by the procedures used for bleaching and enamel etching. The aim of this study was to investigate the bonding strength of orthodontic brackets to laser-etched surfaces of bleached teeth. Methods In a nonbleached control group, acid etching (group A) or Er:YAG laser application (group B) was performed prior to bracket bonding (n = 13 in each group). Similar surface treatments were performed at 1 day (groups C and D; n = 13 in each subgroup) or at 3 weeks (groups E and F; n = 13 in each subgroup) after 38% hydrogen peroxide bleaching in another set of teeth. The specimens were debonded after thermocycling. Results Laser etching of bleached teeth resulted in clinically unacceptable low bonding strength. In the case of acid-etched teeth, waiting for 3 weeks before attachment of brackets to the bleached surfaces resulted in similar, but not identical, bond strength values as those obtained with nonbleached surfaces. However, in the laser-etched groups, the bonding strength after 3 weeks was the same as that for the nonbleached group. Conclusions When teeth bleached with 38% hydrogen peroxide are meant to be bonded immediately, acid etching is preferable. PMID:23814709

  7. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  8. In Vitro Evaluation of Microleakage Around Orthodontic Brackets Using Laser Etching and Acid Etching Methods

    PubMed Central

    Toodehzaeim, Mohammad Hossein; Yassaei, Sogra; Karandish, Maryam; Farzaneh, Sedigeh

    2014-01-01

    Objective: path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques. Materials and Method: The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1), laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2), and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3). After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test. Results: For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups. Conclusion: According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding. PMID:25628661

  9. Sulfuric acid-methanol electrolytes as an alternative to sulfuric-hydrofluoric acid mixtures for electropolishing of niobium

    SciTech Connect

    Zhao, Xin; Corcoran, Sean G.; Kelley, Michael J.

    2011-06-01

    Attainment of the greatest possible interior surface smoothness is critical to meeting the performance demands placed upon niobium superconducting radiofrequency (SRF) accelerator cavities by next generation projects. Electropolishing with HF-H{sub 2}SO{sub 4} electrolytes yields cavities that meet SRF performance goals, but a less-hazardous, more environmentally-friendly process is desirable. Reported studies of EP on chemically-similar tantalum describe the use of sulfuric acid-methanol electrolytes as an HF-free alternative. Reported here are the results of experiments on niobium samples with this electrolyte. Voltammetry experiments indicate a current plateau whose voltage range expands with increasing acid concentration and decreasing temperature. Impedance spectroscopy indicates that a compact salt film is responsible for the current plateau. Equivalent findings in electropolishing chemically-similar tantalum with this electrolyte were interpreted due to as mass transfer limitation by diffusion of Ta ions away from the anode surface. We infer that a similar mechanism is at work here. Conditions were found that yield leveling and brightening comparable to that obtained with HF-H{sub 2}SO{sub 4} mixtures.

  10. Improvement in etching rate for epilayer lift-off with surfactant

    NASA Astrophysics Data System (ADS)

    Wu, Fan-Lei; Horng, Ray-Hua; Lu, Jian-Heng; Chen, Chun-Li; Kao, Yu-Cheng

    2013-03-01

    In this study, the GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with surfactant as mixture etchant solution to etch AlAs sacrificial layer for the selective wet etching of AlAs sacrificial layer. Addiction surfactants etchant significantly enhance the etching rate in the hydrofluoric acid etching solution. It is because surfactant provides hydrophilicity to change the contact angle with enhances the fluid properties of the mixture etchant between GaAs epilayer and GaAs substrate. Arsine gas was released from the etchant solution because the critical reaction product in semiconductor etching is dissolved arsine gas. Arsine gas forms a bubble, which easily displaces the etchant solution, before the AlAs layer was undercut. The results showed that acetone and hydrofluoric acid ratio of about 1:1 for the fastest etching rate of 13.2 ?m / min. The etching rate increases about 4 times compared with pure hydrofluoric acid, moreover can shorten the separation time about 70% of GaAs epilayer with GaAs substrate. The results indicate that etching ratio and stability are improved by mixture etchant solution. It is not only saving the epilayer and the etching solution exposure time, but also reducing the damage to the epilayer structure.

  11. Use of dilute hydrofluoric acid and deep eutectic solvent systems for back end of line cleaning in integrated circuit fabrication

    NASA Astrophysics Data System (ADS)

    Padmanabhan Ramalekshmi Thanu, Dinesh

    Fabrication of current generation integrated circuits involves the creation of multilevel copper/low-k dielectric structures during the back end of line processing. This is done by plasma etching of low-k dielectric layers to form vias and trenches, and this process typically leaves behind polymer-like post etch residues (PER) containing copper oxides, copper fluorides and fluoro carbons, on underlying copper and sidewalls of low-k dielectrics. Effective removal of PER is crucial for achieving good adhesion and low contact resistance in the interconnect structure, and this is accomplished using wet cleaning and rinsing steps. Currently, the removal of PER is carried out using semi-aqueous fluoride based formulations. To reduce the environmental burden and meet the semiconductor industry's environmental health and safety requirements, there is a desire to completely eliminate solvents in the cleaning formulations and explore the use of organic solvent-free formulations. The main objective of this work is to investigate the selective removal of PER over copper and low-k (Coral and Black DiamondRTM) dielectrics using all-aqueous dilute HF (DHF) solutions and choline chloride (CC) -- urea (U) based deep eutectic solvent (DES) system. Initial investigations were performed on plasma oxidized copper films. Copper oxide and copper fluoride based PER films representative of etch products were prepared by ashing g-line and deep UV photoresist films coated on copper in CF4/O2 plasma. PER removal process was characterized using scanning electron microscopy and X-ray photoelectron spectroscopy and verified using electrochemical impedance spectroscopy measurements. A PER removal rate of ~60 A/min was obtained using a 0.2 vol% HF (pH 2.8). Deaeration of DHF solutions improved the selectivity of PER over Cu mainly due to reduced Cu removal rate. A PER/Cu selectivity of ~20:1 was observed in a 0.05 vol% deaerated HF (pH 3). DES systems containing 2:1 U/CC removed PER at a rate of ~10 and ~20 A/min at 40 and 70C respectively. A mixture of 10-90 vol% de-ionized water (W) with 2:1 U/CC in the temperature range of 20 to 40C also effectively removed PER. Importantly, etch rate of copper and low-k dielectric in DES formulations were lower than that in conventional DHF cleaning solutions.

  12. Analysis of cationic structure in some room-temperature molten fluorides and dependence of their ionic conductivity and viscosity on hydrofluoric acid concentration.

    PubMed

    Isogai, Tomohiro; Nakai, Takaaki; Inoue, Hidemi; Nakanishi, Kenta; Kohara, Shinji; Saito, Morihiro; Inaba, Minoru; Tasaka, Akimasa

    2011-08-11

    To understand the ionic and nonionic species in (CH(3))(4)NF·mHF, (CH(3))(3)N·mHF, (C(2)H(5))(4)NF·mHF, and (C(2)H(5))(3)N·mHF melts, the structures of these melts were investigated by infrared spectroscopy, NMR, and high-energy X-ray diffraction. Infrared spectra revealed that three kinds of fluorohydrogenate anions, (FH)(n)F(-) (n = 1, 2, and 3), and molecular hydrofluoric acid (HF) are present in every melt. Ionic conductivity and viscosity of these melts were measured and correlated with their cationic structure. The ionic conductivity of the R(4)N(+)-systems was higher than that of corresponding R(3)NH(+)-systems because a strong N-H···F(HF)(n) interaction prevents the motion of R(3)NH(+) cations in the R(3)N·mHF melts. (CH(3))(4)N(+) and (CH(3))(3)NH(+) cations gave higher ionic conductivity than (C(2)H(5))(4)N(+) and (C(2)H(5))(3)NH(+) cations, respectively, because the ionic radii of former cations were smaller than those of latter. It was concluded that these effects on ionic conductivity can be explained by the cationic structure and the concentration of molecular HF in the melts. PMID:21714521

  13. In-office technique for selectively etching titanium abutments to improve bonding for interim implant prostheses.

    PubMed

    Wadhwani, Chandur; Chung, Kwok-Hung

    2016-03-01

    A technique is described for increasing the surface area of a titanium abutment with hydrofluoric acid etching. This provides mechanical retention for acrylic resin and composite resins and can be easily and rapidly accomplished in both the laboratory and clinic. PMID:26553255

  14. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    PubMed Central

    Alavi, Shiva; Birang, Reza; Hajizadeh, Fatemeh

    2014-01-01

    Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS) and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG) laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under ×10 magnification and adhesive remnant index (ARI) score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa) was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa) (P = 0.41). There was no significant difference in the ARI scores between two groups (P = 0.08). However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching. PMID:25097641

  15. Biomimetic remineralization of resin-bonded acid-etched dentin.

    PubMed

    Tay, F R; Pashley, D H

    2009-08-01

    Degradation of denuded collagen within adhesive resin-infiltrated dentin is a pertinent problem in dentin bonding. A biomimetic remineralization scheme that incorporates non-classic crystallization pathways of fluidic amorphous nanoprecursors and mesoscopic transformation has been successful in remineralizing resin-free, acid-etched dentin, with evidence of intrafibrillar and interfibrillar remineralization. This study tested the hypothesis that biomimetic remineralization provides a means for remineralizing incompletely infiltrated resin-dentin interfaces created by etch-and-rinse adhesives. The remineralization medium consists of a Portland cement/simulated body fluid that includes polyacrylic acid and polyvinylphosphonic acid biomimetic analogs for amorphous calcium phosphate dimension regulation and collagen targeting. Both interfibrillar and intrafibrillar apatites became readily discernible within the hybrid layers after 2-4 months. In addition, intra-resin apatite clusters were deposited within the porosities of the adhesive resin matrices. The biomimetic remineralization scheme provides a proof-of-concept for the adoption of nanotechnology as an alternative strategy to extend the longevity of resin-dentin bonds. PMID:19734458

  16. Biomimetic Remineralization of Resin-bonded Acid-etched Dentin

    PubMed Central

    Tay, F.R.; Pashley, D.H.

    2009-01-01

    Degradation of denuded collagen within adhesive resin-infiltrated dentin is a pertinent problem in dentin bonding. A biomimetic remineralization scheme that incorporates non-classic crystallization pathways of fluidic amorphous nanoprecursors and mesoscopic transformation has been successful in remineralizing resin-free, acid-etched dentin, with evidence of intrafibrillar and interfibrillar remineralization. This study tested the hypothesis that biomimetic remineralization provides a means for remineralizing incompletely infiltrated resin-dentin interfaces created by etch-and-rinse adhesives. The remineralization medium consists of a Portland cement/simulated body fluid that includes polyacrylic acid and polyvinylphosphonic acid biomimetic analogs for amorphous calcium phosphate dimension regulation and collagen targeting. Both interfibrillar and intrafibrillar apatites became readily discernible within the hybrid layers after 2-4 months. In addition, intra-resin apatite clusters were deposited within the porosities of the adhesive resin matrices. The biomimetic remineralization scheme provides a proof-of-concept for the adoption of nanotechnology as an alternative strategy to extend the longevity of resin-dentin bonds. PMID:19734458

  17. Focused electron beam induced etching of copper in sulfuric acid solutions

    NASA Astrophysics Data System (ADS)

    Boehme, Lindsay; Bresin, Matthew; Botman, Aurélien; Ranney, James; Hastings, J. Todd

    2015-12-01

    We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.

  18. Mechanism of the etching rate change of aluminosilicate glass in HF acid with micro-indentation

    NASA Astrophysics Data System (ADS)

    Saito, Yasuhiro; Okamoto, Shinya; Inomata, Hiroyuki; Kurachi, Junji

    2008-12-01

    The etching rate of some kind of glass decreases with micro-indentation. This paper is concerned chiefly with the mechanism for aluminosilicate glass. The change of glass surface condition arising from the indentation and the etching has been examined with X-ray photoelectron spectroscopy (XPS). It was found that the leaching reaction observed through the HF acid etching at non-indented area was restricted at the indented area. The etching rate change should be attributed to the leaching mechanism.

  19. Focused electron beam induced etching of copper in sulfuric acid solutions.

    PubMed

    Boehme, Lindsay; Bresin, Matthew; Botman, Aurlien; Ranney, James; Hastings, J Todd

    2015-12-11

    We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing. PMID:26567988

  20. The Influence of Composition upon Surface Degradation and Stress Corrosion Cracking of the Ni-Cr-Mo Alloys in Wet Hydrofluoric Acid

    SciTech Connect

    Crook, P; Meck, N S; Rebak, R B

    2006-12-04

    At concentrations below 60%, wet hydrofluoric acid (HF) is extremely corrosive to steels, stainless steels and reactive metals, such as titanium, zirconium, and tantalum. In fact, only a few metallic materials will withstand wet HF at temperatures above ambient. Among these are the nickel-copper (Ni-Cu) and nickel-chromium-molybdenum (Ni-Cr-Mo) alloys. Previous work has shown that, even with these materials, there are complicating factors. For example, under certain conditions, internal attack and stress corrosion cracking (SCC) are possible with the Ni-Cr-Mo alloys, and the Ni-Cu materials can suffer intergranular attack when exposed to wet HF vapors. The purpose of this work was to study further the response of the Ni-Cr-Mo alloys to HF, in particular their external corrosion rates, susceptibility to internal attack and susceptibility to HF-induced SCC, as a function of alloy composition. As a side experiment, one of the alloys was tested in two microstructural conditions, i.e. solution annealed (the usual condition for materials of this type) and long-range ordered (this being a means of strengthening the alloy in question). The study of external corrosion rates over wide ranges of concentration and temperature revealed a strong beneficial influence of molybdenum content. However, tungsten, which is used as a partial replacement for molybdenum in some Ni-Cr-Mo alloys, appears to render the alloys more prone to internal attack. With regard to HF-induced SCC of the Ni-Cr-Mo alloys, this study suggests that only certain alloys (i.e., those containing tungsten) exhibit classical SCC. It was also discovered that high external corrosion rates inhibit HF-induced SCC, presumably due to rapid progression of the external attack front. With regard to the effects of long-range ordering, these were only evident at the highest test temperatures, where the ordered structure exhibited much higher external corrosion rates than the annealed structure.

  1. Characterization of Group V Dubnium Homologs on DGA Extraction Chromatography Resin from Nitric and Hydrofluoric Acid Matrices

    SciTech Connect

    Despotopulos, J D; Sudowe, R

    2012-02-21

    Studies of the chemical properties of superheavy elements (SHE) pose interesting challenges due to their short half-lives and low production rates. Chemical systems must have extremely fast kinetics, fast enough kinetics to be able to examine the chemical properties of interest before the SHE decays to another nuclide. To achieve chemistry on such time scales, the chemical system must also be easily automated. Most importantly however, a chemical system must be developed which provides suitable separation and kinetics before an on-line study of a SHE can be performed. Relativistic effects make studying the chemical properties of SHEs interesting due to the impact these effects could have on the SHEs chemical properties. Relativistic effects arise when the velocity of the s orbital electrons approach the speed of light. As this velocity increases, the Bohr radius of the inner electron orbitals decreases and there is an increase in the particles mass. This contraction results in a destabilization of the energy of the outer d and f electron orbitals (5f and 6d in the case of SHE), which can cause these to expand due to their increased shielding from the nuclear charge. Another relativistic effect is the spin-orbit splitting for p, d, and f orbitals into j = 1 {+-} 1/2 states. This can lead most interestingly to a possible increased stability of element 114, which due to large spin-orbit splitting of the 7p orbital and the relativistically stabilized 7p{sub 1/2} and 7s orbital gives rise to a closed shell ground state of 7s{sup 2}7p{sub 1/2}{sup 2}. The homologs of element 105, dubnium (Db), Ta and Nb and the pseudo-homolog Pa, are well known to hydrolyze and form both neutral and non-neutral monoatomic and polyatomic species that may cause issues with extraction from a given chemical system. Early ion-exchange and solvent-extraction studies show mixed results for the behavior of Db. Some studies show Db behaving most similar to Ta, while others show it behaving somewhere between Nb and Pa. Much more recent studies have examined the properties of Db from HNO{sub 3}/HF matrices, and suggest Db forms complexes similar to those of Pa. Very little experimental work into the behavior of element 114 has been performed. Thermochromatography experiments of three atoms of element 114 indicate that the element 114 is at least as volatile as Hg, At, and element 112. Lead was shown to deposit on gold at temperatures about 1000 C higher than the atoms of element 114. Results indicate a substantially increased stability of element 114. No liquid phase studies of element 114 or its homologs (Pb, Sn, Ge) or pseudo-homologs (Hg, Cd) have been performed. Theoretical predictions indicate that element 114 is should have a much more stable +2 oxidation state and neutral state than Pb, which would result in element 114 being less reactive and less metallic than Pb. The relativistic effects on the 7p{sub 1/2} electrons are predicted to cause a diagonal relationship to be introduced into the periodic table. Therefore, 114{sup 2+} is expected to behave as if it were somewhere between Hg{sup 2+}, Cd{sup 2+}, and Pb{sup 2+}. In this work two commercially available extraction chromatography resins are evaluated, one for the separation of Db homologs and pseudo?homologs from each other as well as from potential interfering elements such as Group IV Rf homologs and actinides, and the other for separation of element 114 homologs. One resin, Eichrom's DGA resin, contains a N,N,N',N'-tetra-n-octyldiglycolamide extractant, which separates analytes based on both size and charge characteristics of the solvated metal species, coated on an inert support. The DGA resin was examined for Db chemical systems, and shows a high degree of selectivity for tri-, tetra-, and hexavalent metal ions in multiple acid matrices with fast kinetics. The other resin, Eichrom's Pb resin, contains a di-t-butylcyclohexano 18-crown-6 extractant with isodecanol solvent, which separates analytes based on steric interactions between the cavity of the crown ether and electrostatic interactions between the oxygen's of the ether and cations in the mobile phase. This particular resin has been shown to have an extremely high uptake affinity for Pb, a direct homolog of element 114, and is thus a good initial extractant to examine for a potential element 114 chemical system. Figure 1.1 shows the respective extractant molecules from the DGA and Pb resins. Batch uptake experiments were conducted to examine the uptake behavior of Ta on the DGA resin. Batch uptake experiments were also conducted to examine the uptake behavior of Ge on the Pb resin. Column experiments were designed based on batch uptake experiments of Ta, Am, Pa, Np, Zr, and Nb to establish a sequential extraction of Group IV/V homologs as well as Am for potential use as a Db chemical system.

  2. Behavior of acid etching on titanium: topography, hydrophility and hydrogen concentration.

    PubMed

    Lin, Xi; Zhou, Lei; Li, Shaobing; Lu, Haibin; Ding, Xianglong

    2014-02-01

    Since acid etching is easily controlled and effective, it has become one of the most common methods of surface modification. However, the behavior of etching is seldom discussed. In this study, different surfaces of titanium were prepared by changing the etching temperature and time. Surface topography, roughness, contact angles, surface crystalline structure, hydrogen concentration and mechanical properties were observed. As a result, surface topography and roughness were more proportional to etching temperature; however, diffusion of hydrogen and tensile strength are more time-related to titanium hydride formation on the surface. Titanium becomes more hydrophilic after etching even though the micropits were not formed after etching. More and deeper cracks were found on the specimens with more hydrogen diffusion. Therefore, higher temperature and shorter time are an effective way to get a uniform surface and decrease the diffusion of hydrogen to prevent hydrogen embrittlement. PMID:24343349

  3. A Comparison of Shear Bond Strengths of Metal and Ceramic Brackets using Conventional Acid Etching Technique and Er:YAG Laser Etching

    PubMed Central

    Yassaei, Sogra; Fekrazad, Reza; Shahraki, Neda; Goldani Moghadam, Mahdjoube

    2014-01-01

    Background and aims. The aim of this study was to compare shear bond strength (SBS) of metal and ceramic brackets bonded to enamel using acid versus Er:YAG laser etching. Materials and methods. Eighty premolars were divided into 4 groups: AM (acid etching/ metal brackets), AC (acid etching/ ceramic brackets), LM (laser etching/ metal brackets) and LC (laser etching/ ceramic brackets). Enamel condition-ing was done using acid in AC and AM and Er:YAG laser in LC and LM. Brackets were debonded with a Dartec machine and the SBSs were determined. Adhesive remnant index was evaluated under a stereomicroscope. Two additional teeth were conditioned with acid and laser for scanning electron microscopy examination. Comparisons of SBS value were done by ANOVA test. Results. statistical analyses showed that SBSs of acid groups were significantly higher than that of laser groups, but dif-ferences between SBS values of AC/ AM and LC/LM were not significant. SEM examination revealed different etching pattern. Conclusion. Low power Er:YAG laser etching offers clinically acceptable SBS which besides its other superiorities to acid etching can be an appropriate alternative for bonding of ceramic brackets. PMID:25024836

  4. Controlling cone angle of the tapered tip fiber using dynamic etching

    NASA Astrophysics Data System (ADS)

    Nikbakht, H.; Latifi, H.; Amini, T.; Chenari, Z.

    2014-05-01

    In this paper, a new type of dynamic chemical etching is used to fabricate different fiber tips with different cone angles. It was done by controlling surface level of hydrofluoric acid relative to the fiber, with changing volume of the acid in the container using a syringe pump. Using this method the cone angle of the tip is effectively controlled and angles between 1 and 30 was obtained.

  5. Nanoparticle-based etching of silicon surfaces

    DOEpatents

    Branz, Howard; Duda, Anna; Ginley, David S.; Yost, Vernon; Meier, Daniel; Ward, James S.

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  6. Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates.

    PubMed

    Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Choi, Suk-Ho

    2015-11-01

    We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si. PMID:26473800

  7. Hydrogen loading and UV-irradiation induced etch rate changes in phosphorus-doped fibers.

    PubMed

    Drr, F; Kulik, G; Limberger, H; Salath, R; Semjonov, S; Dianov, E

    2004-11-15

    We show strong changes in chemical etching of phosphorus-doped fiber cores due to hydrogen loading and subsequent UV-irradiation using an atomic force microscope. The etch rate of the fiber core in a low concentration hydrofluoric acid solution (HF) is decreasing after hydrogen loading by as much as 30%. In contrast, UV-irradiation of the hydrogenated fiber increases the core etch rate to values of 27% above the etch rate of the pristine fiber. The UV-induced change in etch rate does not depend on pulse fluence, but only on total dose. We attribute the changes in etch rate to a hydrogen- and radiation-induced modification of color center population. PMID:19488214

  8. Effect of prior acid etching on bonding durability of single-step adhesives.

    PubMed

    Watanabe, Takayuki; Tsubota, Keishi; Takamizawa, Toshiki; Kurokawa, Hiroyasu; Rikuta, Akitomo; Ando, Susumu; Miyazaki, Masashi

    2008-01-01

    This study investigated the effect of prior phosphoric acid etching on the enamel bond strength of five single-step self-etch adhesive systems: Absolute, Clearfil tri-S Bond, Fluoro Bond Shake One, G-Bond and One-Up Bond F Plus. Bovine mandibular incisors were mounted in self-curing resin, and the facial surfaces were wet ground with #600 silicon carbide paper. Adhesives were applied to the enamel surfaces with or without prior phosphoric-acid etching and light irradiated. The resin composites were condensed into a mold and light irradiated. In total, 40 specimens were tested per adhesive system with and without prior acid etching and were further divided into two groups: those stored in water at 37 degrees C for 24 hours without cycling and those stored in water at 37 degrees C for 24 hours followed by thermal cycling between 5 degrees C and 55 degrees C with 10,000 repeats. After storage under each set of conditions, the specimens were tested in shear mode at a crosshead speed of 1.0 mm/minute. Two-way analysis of variance, the Student's t-test and the Tukey HSD test were used to analyze the data at a significance level of 0.05. For the specimens without prior acid etching, the mean bond strengths to enamel ranged from 11.0 to 14.6 MPa after 24-hour storage in water, while the corresponding values for specimens with prior acid etching ranged from 15.2 to 19.3 MPa. When these specimens were subjected to thermal cycling, the mean bond strengths ranged from 11.3 to 17.0 MPa without prior acid etching and from 12.3 to 23.2 MPa with prior acid etching. The changes in enamel bond strengths differed among the adhesive systems tested. After 24-hour storage in water, the most common failure modes were adhesive failure and mixed failure for specimens with and without prior acid etching, respectively. Thus, through a careful choice of adhesive system, prior acid etching can increase the bond strengths of single-step self-etch adhesive systems. PMID:18666501

  9. Effect of fluoride pretreatment on primary and permanent tooth surfaces by acid-etching.

    PubMed

    Choi, Samjin; Cheong, Youjin; Lee, Gi-Ja; Park, Hun-Kuk

    2010-01-01

    This study observed the effect of fluoride application on a 37% phosphoric acid etching for 20 s of the enamel surfaces of primary and permanent teeth based on a clinical protocol employed in dental hospitals, through atomic force microscopy and scanning electron microscopy. Enamel samples were prepared from 84 exfoliated and noncarious teeth. Primary (groups 1-4) and permanent (groups 5-8) tooth samples were assigned randomly to one of eight groups based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) treatment. Groups 1 and 5 received no fluoride application. Groups 2-4 and 6-8 were pretreated with fluoride and received acid-etching 2 weeks later (groups 2 and 6), 1 week later (groups 3 and 7), and immediately (groups 4 and 8). The acid-etching process led to a significant increase in roughness (p<0.0001), and the APF treatment led to a decrease in primary and permanent tooth surface roughness (p<0.005). An acid-etching procedure 2 weeks after performing an APF pretreatment might be recommended to obtain the maximum enamel adhesion of a resin composite. PMID:21254111

  10. Distribution of Components in Ion Exchange Materials Taken from the K East Basin and Leaching of Ion Exchange Materials by Nitric/Hydrofluoric Acid and Nitric/Oxalic Acid

    SciTech Connect

    Delegard, C.H.; Rinehart, D.E.; Hoopes, F.V.

    1999-04-02

    Laboratory tests were performed to examine the efficacy of mixed nitric/hydrofluoric acid followed by mixed nitric/oxalic acid leach treatments to decontaminate ion exchange materials that have been found in a number of samples retrieved from K East (KE)Basin sludge. The ion exchange materials contain organic ion exchange resins and zeolite inorganic ion exchange material. Based on process records, the ion exchange resins found in the K Basins is a mixed-bed, strong acid/strong base material marketed as Purolite NRW-037. The zeolite material is Zeolon-900, a granular material composed of the mineral mordenite. Radionuclides sorbed or associated with the ion exchange material can restrict its disposal to the Environmental Restoration Disposal Facility (ERDF). The need for testing to support development of a treatment process for K Basin sludge has been described in Section 4.2 of ''Testing Strategy to Support the Development of K Basins Sludge Treatment Process'' (Flament 1998). Elutriation and washing steps are designed to remove the organic resins from the K Basin sludge. To help understand the effects of the anticipated separation steps, tests were performed with well-rinsed ion exchange (IX) material from KE Basin floor sludge (sample H-08 BEAD G) and with well-rinsed IX having small quantities of added KE canister composite sludge (sample KECOMP). Tests also were performed to determine the relative quantities of organic and inorganic IX materials present in the H-08 K Basin sludge material. Based on chemical analyses of the separated fractions, the rinsed and dry IX material H-08 BEAD G was found to contain 36 weight percent inorganic material (primarily zeolite). The as-received (unrinsed) and dried H-08 material was estimated to contain 45 weight percent inorganic material.

  11. Evaluating EDTA as a substitute for phosphoric acid-etching of enamel and dentin.

    PubMed

    Imbery, Terence A; Kennedy, Matthew; Janus, Charles; Moon, Peter C

    2012-01-01

    Matrix metalloproteinases (MMPs) are proteolytic enzymes released when dentin is acid-etched. The enzymes are capable of destroying unprotected collagen fibrils that are not encapsulated by the dentin adhesive. Chlorhexidine applied after etching inhibits the activation of released MMPs, whereas neutral ethylenediamine tetra-acetic acid (EDTA) prevents the release of MMPs. The purpose of this study was to determine if conditioning enamel and dentin with EDTA can be a substitute for treating acid-etching enamel and dentin with chlorhexidine. A column of composite resin was bonded to enamel and dentin after conditioning. Shear bond strengths were evaluated after 48 hours and after accelerated aging for three hours in 12% sodium hypochlorite. Shear bond strengths ranged from 15.6 MP a for accelerated aged EDTA enamel specimens to 26.8 MPa for dentin conditioned with EDTA and tested after 48 hours. A three-way ANOVA and a Tukey HSD test found statistically significant differences among the eight groups and the three independent variables (P < 0.05). EDTA was successfully substituted for phosphoric acid-etched enamel and dentin treated with chlorhexidine. Interactions of conditioning agent and aging were significant for dentin but not for enamel. In an effort to reduce the detrimental effects of MMPs, conditioning enamel and dentin with EDTA is an alternative to treating acid-etched dentin and enamel with chlorhexidine. PMID:22414518

  12. Hybrid chemical etching of femtosecond laser irradiated structures for engineered microfluidic devices

    NASA Astrophysics Data System (ADS)

    LoTurco, S.; Osellame, R.; Ramponi, R.; Vishnubhatla, K. C.

    2013-08-01

    We report on the fabrication of 3D buried micro-structures in fused silica glass using the selective chemical etching along femtosecond laser irradiated zones. Specifically, we have exploited a novel approach combining two different etching agents in successive steps. The widely used hydrofluoric acid solution, which provides fast volume removal, and potassium hydroxide solution, which exhibits high selectivity, are used to fabricate microfluidic structures. We demonstrate that this hybrid approach takes advantage of both of the individual etchants special characteristics and facilitates prototyping and fabrication of complex geometries for microfluidic devices.

  13. A relative humidity sensing probe based on etched thin-core fiber coated with polyvinyl alcohol

    NASA Astrophysics Data System (ADS)

    Sun, Hao; Yang, Zaihang; Zhou, Libin; Liu, Nan; Gang, Tingting; Qiao, Xueguang; Hu, Manli

    2015-12-01

    A relative humidity (RH) sensing probe based on etched thin-core fiber (TCF) coated with polyvinyl alcohol (PVA) is proposed and experimentally demonstrated.This sensor is constructed by splicing a section of TCF with a single mode fiber (SMF), then part of the TCF's cladding is etched by hydrofluoric acid solution and finally the tip of TCF is coated with PVA. Experimental results demonstrate that this sensor can measure the ambient RH by demodulating the power variation of reflection spectrum. The power demodulation method make this sensor can ignore the temperature cross-sensitivity and have an extensive application prospect.

  14. Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid

    NASA Astrophysics Data System (ADS)

    Okamoto, Takeshi; Sano, Yasuhisa; Tachibana, Kazuma; Van Pho, Bui; Arima, Kenta; Inagaki, Kouji; Yagi, Keita; Murata, Junji; Sadakuni, Shun; Asano, Hiroya; Isohashi, Ai; Yamauchi, Kazuto

    2012-04-01

    We used catalyst-referred etching, which is an abrasive-free planarization method, to produce an extremely smooth surface on a 4H-SiC substrate. However, the removal rate was lower than that obtained by chemical mechanical polishing, which is the planarization method generally used for SiC substrates. To improve the removal rate, we investigated its dependence on rotational velocity and processing pressure. We found that the removal rate increases in proportion to both rotational velocity and processing pressure. A lapped 4H-SiC substrate was planarized under conditions that achieved the highest removal rate of approximately 500 nm/h. A smooth surface with a root-mean square roughness of less than 0.1 nm was fabricated within 15 min. Because the surface, which was processed under conditions of high rotational velocity and high processing pressure, consisted of a step-terrace structure, it was well ordered up to the topmost surface.

  15. Acid-etched microtexture for enhancement of bone growth into porous-coated implants.

    PubMed

    Hacking, S A; Harvey, E J; Tanzer, M; Krygier, J J; Bobyn, J D

    2003-11-01

    We designed an in vivo study to determine if the superimposition of a microtexture on the surface of sintered titanium beads affected the extent of bone ingrowth. Cylindrical titanium intramedullary implants were coated with titanium beads to form a porous finish using commercial sintering techniques. A control group of implants was left in the as-sintered condition. The test group was etched in a boiling acidic solution to create an irregular surface over the entire porous coating. Six experimental dogs underwent simultaneous bilateral femoral intramedullary implantation of a control implant and an acid etched implant. At 12 weeks, the implants were harvested in situ and the femora processed for undecalcified, histological examination. Eight transverse serial sections for each implant were analysed by backscattered electron microscopy and the extent of bone ingrowth was quantified by computer-aided image analysis. The extent of bone ingrowth into the control implants was 15.8% while the extent of bone ingrowth into the etched implants was 25.3%, a difference of 60% that was statistically significant. These results are consistent with other research that documents the positive effect of microtextured surfaces on bone formation at an implant surface. The acid etching process developed for this study represents a simple method for enhancing the potential of commonly available porous coatings for biological fixation. PMID:14653605

  16. Effect of helium ion beam treatment on the etching rate of silicon nitride

    NASA Astrophysics Data System (ADS)

    Petrov, Yu. V.; Sharov, T. V.; Baraban, A. P.; Vyvenko, O. F.

    2015-04-01

    We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. 30 keV helium ions were implanted into a 500-nm-thick silicon nitride film on silicon. Ion fluences from 1015 to 1017 cm-2 were used. Etching was performed in a hydrofluoric acid solution. All samples were investigated with a scanning electron microscope and atomic force microscope. It was found that helium ion implantation can increase the etching rate by a factor of three. This results in the formation of a well in the implanted area after etching. The maximum depth of the well is about 180 nm and is limited by the penetration depth of 30 keV helium ions. Two possible reasons for enhanced etching are suggested: enhancement by ion-induced defects and electrostatic interaction of ions of the etchant with ion-induced space charge of silicon nitride. The recombination of ion-induced defects is also discussed.

  17. Chemically Etched Open Tubular and Monolithic Emitters for Nanoelectrospray Ionization Mass Spectrometry

    SciTech Connect

    Kelly, Ryan T.; Page, Jason S.; Luo, Quanzhou; Moore, Ronald J.; Orton, Daniel J.; Tang, Keqi; Smith, Richard D.

    2006-11-15

    We have developed a new procedure for fabricating fused silica emitters for electrospray ionization-mass spectrometry (ESI-MS) in which the end of a bare fused silica capillary is immersed into aqueous hydrofluoric acid, and water is pumped through the capillary to prevent etching of the interior. Surface tension causes the etchant to climb the capillary exterior, and the etch rate in the resulting meniscus decreases as a function of distance from the bulk solution. Etching continues until the silica touching the hydrofluoric acid reservoir is completely removed, essentially stopping the etch process. The resulting emitters have no internal taper, making them much less prone to clogging compared to e.g. pulled emitters. The high aspect ratios and extremely thin walls at the orifice facilitate very low flow rate operation; stable ESI-MS signals were obtained for model analytes from 5-μm-diameter emitters at a flow rate of 5 nL/min with a high degree of inter-emitter reproducibility. In extensive evaluation, the etched emitters were found to enable approximately four times as many LC-MS analyses of proteomic samples before failing compared with conventional pulled emitters. The fabrication procedure was also employed to taper the ends of polymer monolith-containing silica capillaries for use as ESI emitters. In contrast to previous work, the monolithic material protrudes beyond the fused silica capillaries, improving the monolith-assisted electrospray process.

  18. Formation of nanostructured silicon surfaces by stain etching

    PubMed Central

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min. PMID:25435830

  19. Biomechanical comparison of the sandblasted and acid-etched and the machined and acid-etched titanium surface for dental implants.

    PubMed

    Li, Dehua; Ferguson, Stephen J; Beutler, Thomas; Cochran, David L; Sittig, Caroline; Hirt, Hans Peter; Buser, Daniel

    2002-05-01

    To make a direct biomechanical comparison between the sandblasted and acid-etched surface (SLA) and the machined and acid-etched surface (MA), a well-established animal model for implant removal torque testing was employed, using a split-mouth experimental design. All implants had an identical cylindrical solid-screw shape with the standard ITI thread configuration, without any macroscopic retentive structures. After 4, 8, and 12 weeks of bone healing, removal torque testing was performed to evaluate the interfacial shear strength of each surface type. Results showed that the SLA surface was more powerful in enhancing the interfacial shear strength of implants in comparison with the MA surface. Removal torque values of the SLA-surfaced implants were about 30% higher than those of the MA-surfaced implants (p = 0.002) except at 4 weeks, when the difference was at the threshold of statistical significance (p = 0.0519). The mean removal torque values for the SLA implants were 1.5074 Nm at 4 weeks, 1.8022 Nm at 8 weeks, and 1.7130 Nm at 12 weeks; and correspondingly, 1.1924 Nm, 1.3092 Nm, and 1.3226 Nm for the MA implants. It can be concluded that the SLA surface achieves a better bone anchorage than the MA surface, and that sandblasting before acid etching has a beneficial effect on the interfacial shear strength. As regards the bone-implant interfacial stiffness calculated from the torque-rotation curve, the SLA implants showed an overall more than 5% higher stiffness compared with the MA implants, although the difference did not reach the statistical significance level. PMID:11857440

  20. Optimization of silver-assisted nano-pillar etching process in silicon

    NASA Astrophysics Data System (ADS)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-12-01

    In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

  1. Metal etching composition

    NASA Technical Reports Server (NTRS)

    Otousa, Joseph E. (inventor); Thomas, Clark S. (inventor); Foster, Robert E. (inventor)

    1991-01-01

    The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

  2. Effect of acid etching on bond strength of nanoionomer as an orthodontic bonding adhesive

    PubMed Central

    Khan, Saba; Verma, Sanjeev K.; Maheshwari, Sandhya

    2015-01-01

    Aims: A new Resin Modified Glass Ionomer Cement known as nanoionomer containing nanofillers of fluoroaluminosilicate glass and nanofiller 'clusters' has been introduced. An in-vitro study aimed at evaluating shear bond strength (SBS) and adhesive remnant index (ARI) of nanoionomer under etching/unetched condition for use as an orthodontic bonding agent. Material and Methods: A total of 75 extracted premolars were used, which were divided into three equal groups of 25 each: 1-Conventional adhesive (Enlight Light Cure, SDS, Ormco, CA, USA) was used after and etching with 37% phosphoric acid for 30 s, followed by Ortho Solo application 2-nanoionomer (Ketac™ N100, 3M, ESPE, St. Paul, MN, USA) was used after etching with 37% phosphoric acid for 30 s 3-nanoionomer was used without etching. The SBS testing was performed using a digital universal testing machine (UTM-G-410B, Shanta Engineering). Evaluation of ARI was done using scanning electron microscopy. The SBS were compared using ANOVA with post-hoc Tukey test for intergroup comparisons and ARI scores were compared with Chi-square test. Results: ANOVA (SBS, F = 104.75) and Chi-square (ARI, Chi-square = 30.71) tests revealed significant differences between groups (P < 0.01). The mean (SD) SBS achieved with conventional light cure adhesive was significantly higher (P < 0.05) (10.59 ± 2.03 Mpa, 95% CI, 9.74-11.41) than the nanoionomer groups (unetched 4.13 ± 0.88 Mpa, 95% CI, 3.79-4.47 and etched 9.32 ± 1.87 Mpa, 95% CI, 8.58-10.06). However, nanoionomer with etching, registered SBS in the clinically acceptable range of 5.9–7.8 MPa, as suggested by Reynolds (1975). The nanoionomer groups gave significantly lower ARI values than the conventional adhesive group. Conclusion: Based on this in-vitro study, nanoionomer with etching can be successfully used as an orthodontic bonding agent leaving less adhesive remnant on enamel surface, making cleaning easier. However, in-vivo studies are needed to confirm the validity of present findings. PMID:26955629

  3. Torque Analysis of a Triple Acid-Etched Titanium Implant Surface

    PubMed Central

    Pontes, Ana Emlia Farias; de Toledo, Cssio Torres; Garcia, Valdir Gouveia; Ribeiro, Fernando Salimon; Sakakura, Celso Eduardo

    2015-01-01

    The present study aimed to evaluate the removal torque of titanium implants treated with triple acid etching. Twenty-one rats were used in this study. For all animals, the tibia was prepared with a 2?mm drill, and a titanium implant (2 4?mm) was inserted after treatment using the subtraction method of triple acid etching. The flaps were sutured. Seven animals were killed 14, 28, and 63 days after implant installation, and the load necessary for removing the implant from the bone was evaluated by using a torque meter. The torque values were as follows: 3.3 1.7?Ncm (14 days), 2.2 1.3?Ncm (28 days), and 6.7 1.4?Ncm (63 days). The torque value at the final healing period (63 days) was statistically significantly different from that at other time points tested (ANOVA, p = 0.0002). This preliminary study revealed that treatment with triple acid etching can create a promising and efficient surface for the process of osseointegration. PMID:26543898

  4. Comparison of shear bond strength of composite resin to enamel surface with laser etching versus acid etching: An in vitro evaluation

    PubMed Central

    Hoshing, Upendra A; Patil, Suvarna; Medha, Ashish; Bandekar, Siddhesh Dattatray

    2014-01-01

    Introduction: The aim of the study is in vitro evaluation of the shear bond strength of composite resin bonded to enamel which is pretreated using acid etchant and Er,Cr:Ysgg. Materials and Methods: 40 extracted human teeth were divided in two groups of 20 each (Groups A and B). In Group A, prepared surface of enamel was etched using 37% phosphoric acid (Scotchbond, 3M). In Group B, enamel was surface treated by a an Er, Cr: YSGG laser system (Waterlase MD, Biolase Technology Inc., San Clemente, CA, USA) operating at a wavelength of 2,780 nm and having a pulse duration of 140-200 microsecond with a repetition rate of 20 Hz and 40 Hz. Bonding agent ((Scotchbond Multipurpose, 3M) was applied over the test areas on 20 samples of Groups A and B each, and light cured. Composite resin (Ceram X duo Nanoceramic restorative, Densply) was applied onto the test areas as a 3 3 mm diameter bid, and light cured. The samples were tested for shear bond strength. Results: Mean shear bond strength for acid-etched enamel (26.41 0.66MPa, range 25.155 to 27.150 MPa) was significantly higher (P < 0.01) than for laser-etched enamel (16.23 0.71MPa, range 15.233 to 17.334 MPa). Conclusions: For enamel surface, mean shear bond strength of bonded composite obtained after laser etching were significantly lower than those obtained after acid etching. PMID:25125842

  5. Effects of laser and acid etching and air abrasion on mineral content of dentin.

    PubMed

    Malkoc, Meral Arslan; Ta?demir, Serife Tuba; Ozturk, A Nilgun; Ozturk, Bora; Berk, Gizem

    2011-01-01

    The aim of this study was to evaluate the mineral content of dentin prepared using an Er,Cr:YSGG laser at four different power settings, acid etching, and air abrasion. The study teeth comprised 35 molars which were randomly divided into seven equal groups. The occlusal third of the crowns were cut with a slow-speed diamond saw. The groups were as follows: group A, control group; group B, dentin etched with 35% buffered phosphoric acid for 30 s; group C, dentin abraded at 60 psi with 50-m aluminium oxide for 1 s; groups D-G, dentin irradiated with the Er,Cr:YSGG laser at 1.50 W (group D), 2.25 W (group E), 3.00 W (group F), and 3.50 W (group G). The levels of Mg, P, Ca, K and Na in each dentin slab were measured by inductively coupled plasma-atomic emission spectrometry (ICP-AES). Data were analysed by one way analysis of variance and Tukey HSD tests. There were no significant differences between the groups in the levels of Ca, P and Na, and the Ca/P ratio (p>0.05); however, there were significant differences in the levels of K (p<0.001) and Mg (p=0.13). In addition, the levels of Mg in the air abrasion group were higher than in the other groups (p<0.01). Etching with the Er,Cr:YSGG laser system, air abrasion and acid etching did not affect the levels of Ca, P and Na, or the Ca/P ratio, in the dentin surface. PMID:20084534

  6. Characterization of deep wet etching of glass

    NASA Astrophysics Data System (ADS)

    Iliescu, Ciprian; Chen, Bangtao; Tay, Francis E. H.; Xu, Guolin; Miao, Jianmin

    2006-01-01

    This paper presents a characterization of wet etching of glass in HF-based solutions with a focus on etching rate, masking layers and quality of the generated surface. The first important factor that affects the deep wet etching process is the glass composition. The presence of oxides such as CaO, MgO or Al IIO 3 that give insoluble products after reaction with HF can generate rough surface and modify the etching rate. A second factor that influences especially the etch rate is the annealing process (560C / 6 hours in N II environment). For annealed glass samples an increase of the etch rate with 50-60% was achieved. Another important factor is the concentration of the HF solution. For deep wet etching of Pyrex glass in hydrofluoric acid solution, different masking layers such as Cr/Au, PECVD amorphous silicon, LPCVD polysilicon and silicon carbide are analyzed. Detailed studies show that the stress in the masking layer is a critical factor for deep wet etching of glass. A low value of compressive stress is recommended. High value of tensile stress in the masking layer (200-300 MPa) can be an important factor in the generation of the pinholes. Another factor is the surface hydrophilicity. A hydrophobic surface of the masking layer will prevent the etching solution from flowing through the deposition defects (micro/nano channels or cracks) and the generation of pinholes is reduced. The stress gradient in the masking layer can also be an important factor in generation of the notching defects on the edges. Using these considerations a special multilayer masks Cr/Au/Photoresist (AZ7220) and amorphous silicon/silicon carbide/Photoresist were fabricated for deep wet etching of a 500 ?m and 1mm-thick respectively Pyrex glass wafers. In both cases the etching was performed through wafer. From our knowledge these are the best results reported in the literature. The quality of the generated surface is another important factor in the fabrication process. We notice that the roughness of generated surface can be significantly improved by adding HCl in HF solution (the optimal ratio between HF (49%) and HCl (37%) was 10/1).

  7. Investigation of Acid-Etched CO2 Laser Ablated Enamel Surfaces Using Polarization Sensitive Optical Coherence Tomography

    PubMed Central

    Nahm, Byung J.; Kang, Hobin; Chan, Kenneth; Fried, Daniel

    2012-01-01

    A carbon dioxide laser operating at the highly absorbed wavelength of 9.3?m with a pulse duration of 1015?s is ideally suited for caries removal and caries prevention. The enamel thermally modified by the laser has enhanced resistance to acid dissolution. This is an obvious advantage for caries prevention; however, it is often necessary to etch the enamel surface to increase adhesion to composite restorative materials and such surfaces may be more resistant to etching. The purpose of the study was to non-destructively measure the susceptibility of laser-ablated enamel surfaces to acid dissolution before and after acid-etching using Polarization Sensitive Optical Coherence Tomography (PS-OCT). PS-OCT was used to acquire images of bovine enamel surfaces after exposure to laser irradiation at ablative fluence, acid-etching, and a surface softened dissolution model. The integrated reflectivity from lesion and the lesion depth were measured using PS-OCT. Samples were also sectioned for examination by Polarized Light Microscopy (PLM). PS-OCT images showed that acid-etching greatly accelerated the formation of subsurface lesions on both laser-irradiated and non-irradiated surfaces (P<0.05). A 37.5% phosphoric acid etch removed the laser modified enamel layer after 510 seconds. PMID:23539418

  8. Investigation of acid-etched CO2 laser ablated enamel surfaces using polarization sensitive optical coherence tomography

    NASA Astrophysics Data System (ADS)

    Nahm, Byung J.; Kang, Hobin; Chan, Kenneth; Fried, Daniel

    2012-01-01

    A carbon dioxide laser operating at the highly absorbed wavelength of 9.3μm with a pulse duration of 10-15μs is ideally suited for caries removal and caries prevention. The enamel thermally modified by the laser has enhanced resistance to acid dissolution. This is an obvious advantage for caries prevention; however, it is often necessary to etch the enamel surface to increase adhesion to composite restorative materials and such surfaces may be more resistant to etching. The purpose of the study was to non-destructively measure the susceptibility of laser-ablated enamel surfaces to acid dissolution before and after acid-etching using Polarization Sensitive Optical Coherence Tomography (PS-OCT). PS-OCT was used to acquire images of bovine enamel surfaces after exposure to laser irradiation at ablative fluence, acid-etching, and a surface softened dissolution model. The integrated reflectivity from lesion and the lesion depth were measured using PS-OCT. Samples were also sectioned for examination by Polarized Light Microscopy (PLM). PS-OCT images showed that acid-etching greatly accelerated the formation of subsurface lesions on both laser-irradiated and non-irradiated surfaces (P<0.05). A 37.5% phosphoric acid etch removed the laser modified enamel layer after 5-10 seconds.

  9. Investigation of Acid-Etched CO2 Laser Ablated Enamel Surfaces Using Polarization Sensitive Optical Coherence Tomography.

    PubMed

    Nahm, Byung J; Kang, Hobin; Chan, Kenneth; Fried, Daniel

    2012-02-01

    A carbon dioxide laser operating at the highly absorbed wavelength of 9.3μm with a pulse duration of 10-15μs is ideally suited for caries removal and caries prevention. The enamel thermally modified by the laser has enhanced resistance to acid dissolution. This is an obvious advantage for caries prevention; however, it is often necessary to etch the enamel surface to increase adhesion to composite restorative materials and such surfaces may be more resistant to etching. The purpose of the study was to non-destructively measure the susceptibility of laser-ablated enamel surfaces to acid dissolution before and after acid-etching using Polarization Sensitive Optical Coherence Tomography (PS-OCT). PS-OCT was used to acquire images of bovine enamel surfaces after exposure to laser irradiation at ablative fluence, acid-etching, and a surface softened dissolution model. The integrated reflectivity from lesion and the lesion depth were measured using PS-OCT. Samples were also sectioned for examination by Polarized Light Microscopy (PLM). PS-OCT images showed that acid-etching greatly accelerated the formation of subsurface lesions on both laser-irradiated and non-irradiated surfaces (P<0.05). A 37.5% phosphoric acid etch removed the laser modified enamel layer after 5-10 seconds. PMID:23539418

  10. Uniform vertical trench etching on silicon with high aspect ratio by metal-assisted chemical etching using nanoporous catalysts.

    PubMed

    Li, Liyi; Liu, Yan; Zhao, Xueying; Lin, Ziyin; Wong, Ching-Ping

    2014-01-01

    Recently, metal-assisted chemical etching (MaCE) has been proposed as a promising wet-etching method for the fabrication of micro- and nanostructures on silicon with low cost. However, uniform vertical trench etching with high aspect ratio is still of great challenge for traditional MaCE. Here we report an innovated MaCE method, which combined the use of a nanoporous gold thin film as the catalyst and a hydrofluoric acid (HF)-hydrogen peroxide (H2O2) mixture solution with a low HF-to-H2O2 concentration ratio (?) as the etchant. The reported method successfully fabricated vertical trenches on silicon with a width down to 2 ?m and an aspect ratio of 16. The geometry of the trenches was highly uniform throughout the 3D space. The vertical etching direction was favored on both (100)- and (111)-oriented silicon substrates. The reported method was also capable of producing multiple trenches on the same substrate with individually-tunable lateral geometry. An etching mechanism including a through-catalyst mass-transport process and an electropolishing-favored charge-transport process was identified by a comparative study. The novel method fundamentally solves the problems of distortion and random movement of isolated catalysts in MaCE. The results mark a breakthrough in high-quality silicon trench-etching technology with a cost of more than 2 orders of magnitude lower than that of the currently available methods. PMID:24261312

  11. Micro/nanofabrication of poly(L-lactic acid) using focused ion beam direct etching

    NASA Astrophysics Data System (ADS)

    Oyama, Tomoko Gowa; Hinata, Toru; Nagasawa, Naotsugu; Oshima, Akihiro; Washio, Masakazu; Tagawa, Seiichi; Taguchi, Mitsumasa

    2013-10-01

    Micro/nanofabrication of biocompatible and biodegradable poly(L-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  12. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel.

    PubMed

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-02-01

    Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  13. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    PubMed Central

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  14. Wet-etching of structures with straight facets and adjustable taper into glass substrates.

    PubMed

    Pekas, Nikola; Zhang, Qing; Nannini, Matthieu; Juncker, David

    2010-02-21

    Wet etching of glass by hydrofluoric acid is widely used in microfabrication, but is limited by the isotropic nature of the process that leads to rounded sidewalls and a 90 degrees angle between the etch front and the surface of the substrate. For many applications such as microvalving, or for further processing such as spin-coating, well controlled, gently sloping sidewalls are often preferred. Here, we present a new approach for forming straight facets and for adjusting the sidewall angle in wet-etched glass substrates by controlling the lateral dissolution of an etch mask during etching. The etch mask comprises a Ti-Au bilayer where Au serves to protect the Ti. During isotropic etching of glass by HF the Ti layer is etched away laterally at the same time, which leads to straight, gently sloping sidewalls. We introduce two methods for controlling the sidewall angle. The first one is based on adjusting the thickness of Ti which controls the lateral etch rate, and thus the angle; the thinner the Ti, the slower its lateral etch rate and the steeper the angle in the etched glass. The second method involves a cathodic bias applied to the Ti-Au etch mask which again regulates the dissolution rate of Ti; the more negative the bias the slower the lateral etch rate. Both methods offer accurate control of the sidewall angle over a wide range, can be readily integrated into existing fabrication processes, and will be particularly useful for making channels with trapezoidal cross-sections, valve seats with gentle profiles, or for patterning electrodes across and inside of microfluidic channels. PMID:20126690

  15. Shear bond strength and debonding characteristics of metal and ceramic brackets bonded with conventional acid-etch and self-etch primer systems: An in-vivo study

    PubMed Central

    Mirzakouchaki, Behnam; Sharghi, Reza; Shirazi, Samaneh; Moghimi, Mahsan; Shahrbaf, Shirin

    2016-01-01

    Background Different in-vitro studies have reported various results regarding shear bond strength (SBS) of orthodontic brackets when SEP technique is compared to conventional system. This in-vivo study was designed to compare the effect of conventional acid-etching and self-etching primer adhesive (SEP) systems on SBS and debonding characteristics of metal and ceramic orthodontic brackets. Material and Methods 120 intact first maxillary and mandibular premolars of 30 orthodontic patients were selected and bonded with metal and ceramic brackets using conventional acid-etch or self-etch primer system. The bonded brackets were incorporated into the wire during the study period to simulate the real orthodontic treatment condition. The teeth were extracted and debonded after 30 days. The SBS, debonding characteristics and adhesive remnant indices (ARI) were determined in all groups. Results The mean SBS of metal brackets was 10.63±1.42 MPa in conventional and 9.38±1.53 MPa in SEP system, (P=0.004). No statistically significant difference was noted between conventional and SEP systems in ceramic brackets. The frequency of 1, 2 and 3 ARI scores and debonding within the adhesive were the most common among all groups. No statistically significant difference was observed regarding ARI or failure mode of debonded specimens in different brackets or bonding systems. Conclusions The SBS of metal brackets bonded using conventional system was significantly higher than SEP system, although the SBS of SEP system was clinically acceptable. No significant difference was found between conventional and SEP systems used with ceramic brackets. Total SBS of metal brackets was significantly higher than ceramic brackets. Due to adequate SBS of SEP system in bonding the metal brackets, it can be used as an alternative for conventional system. Key words:Shear bond strength, Orthodontic brackets, Adhesive remnant index, self-etch. PMID:26855704

  16. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin.

    PubMed

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.11.8 MPa) and acid+laser (15.63.5 MPa) groups were significantly higher than those for laser+acid (15.63.5 MPa), laser etching (14.13.4 MPa) and control (8.12.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  17. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    PubMed Central

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.11.8 MPa) and acid+laser (15.63.5 MPa) groups were significantly higher than those for laser+acid (15.63.5 MPa), laser etching (14.13.4 MPa) and control (8.12.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  18. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, S.M.; Tao, H.; Todd-Copley, J.A.

    1991-06-11

    A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

  19. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, Stephen M.; Tao, Hongyi; Todd-Copley, Judith A.

    1991-01-01

    A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

  20. Improvement of enamel bond strengths for conventional and resin-modified glass ionomers: acid-etching vs. conditioning*

    PubMed Central

    Zhang, Ling; Tang, Tian; Zhang, Zhen-liang; Liang, Bing; Wang, Xiao-miao; Fu, Bai-ping

    2013-01-01

    Objective: This study deals with the effect of phosphoric acid etching and conditioning on enamel micro-tensile bond strengths (μTBSs) of conventional and resin-modified glass ionomer cements (GICs/RMGICs). Methods: Forty-eight bovine incisors were prepared into rectangular blocks. Highly-polished labial enamel surfaces were either acid-etched, conditioned with liquids of cements, or not further treated (control). Subsequently, two matching pre-treated enamel surfaces were cemented together with one of four cements [two GICs: Fuji I (GC), Ketac Cem Easymix (3M ESPE); two RMGICs: Fuji Plus (GC), RelyX Luting (3M ESPE)] in preparation for μTBS tests. Pre-treated enamel surfaces and cement-enamel interfaces were analyzed by scanning electron microscopy (SEM). Results: Phosphoric acid etching significantly increased the enamel μTBS of GICs/RMGICs. Conditioning with the liquids of the cements produced significantly weaker or equivalent enamel μTBS compared to the control. Regardless of etching, RMGICs yielded stronger enamel μTBS than GICs. A visible hybrid layer was found at certain enamel-cement interfaces of the etched enamels. Conclusions: Phosphoric acid etching significantly increased the enamel μTBSs of GICs/RMGICs. Phosphoric acid etching should be recommended to etch the enamel margins before the cementation of the prostheses such as inlays and onlays, using GICs/RMGICs to improve the bond strengths. RMGICs provided stronger enamel bond strength than GICs and conditioning did not increase enamel bond strength. PMID:24190447

  1. Fabrication of ultra-high aspect ratio silicon nanopores by electrochemical etching

    SciTech Connect

    Schmidt, Torsten; Zhang, Miao; Linnros, Jan; Yu, Shun

    2014-09-22

    We report on the formation of ultra-high aspect ratio nanopores in silicon bulk material using photo-assisted electrochemical etching. Here, n-type silicon is used as anode in contact with hydrofluoric acid. Based on the local dissolution of surface atoms in pre-defined etching pits, pore growth and pore diameter are, respectively, driven and controlled by the supply of minority charge carriers generated by backside illumination. Thus, arrays with sub-100 nm wide pores were fabricated. Similar to macropore etching, it was found that the pore diameter is proportional to the etching current, i.e., smaller etching currents result in smaller pore diameters. To find the limits under which nanopores with controllable diameter still can be obtained, etching was performed at very low current densities (several μA cm{sup −2}). By local etching, straight nanopores with aspect ratios above 1000 (∼19 μm deep and ∼15 nm pore tip diameter) were achieved. However, inherent to the formation of such narrow pores is a radius of curvature of a few nanometers at the pore tip, which favors electrical breakdown resulting in rough pore wall morphologies. Lowering the applied bias is adequate to reduce spiking pores but in most cases also causes etch stop. Our findings on bulk silicon provide a realistic chance towards sub-10 nm pore arrays on silicon membranes, which are of great interest for molecular filtering and possibly DNA sequencing.

  2. Characterization of deep wet etching of fused silica glass for single cell and optical sensor deposition

    NASA Astrophysics Data System (ADS)

    Zhu, Haixin; Holl, Mark; Ray, Tathagata; Bhushan, Shivani; Meldrum, Deirdre R.

    2009-06-01

    The development of a high-throughput single-cell metabolic rate monitoring system relies on the use of transparent substrate material for a single cell-trapping platform. The high optical transparency, high chemical resistance, improved surface quality and compatibility with the silicon micromachining process of fused silica make it very attractive and desirable for this application. In this paper, we report the results from the development and characterization of a hydrofluoric acid (HF) based deep wet-etch process on fused silica. The pin holes and notching defects of various single-coated masking layers during the etching are characterized and the most suitable masking materials are identified for different etch depths. The dependence of the average etch rate and surface roughness on the etch depth, impurity concentration and HF composition are also examined. The resulting undercut from the deep HF etch using various masking materials is also investigated. The developed and characterized process techniques have been successfully implemented in the fabrication of micro-well arrays for single cell trapping and sensor deposition. Up to 60 m deep micro-wells have been etched in a fused silica substrate with over 90% process yield and repeatability. To our knowledge, such etch depth has never been achieved in a fused silica substrate by using a non-diluted HF etchant and a single-coated masking layer at room temperature.

  3. Ultrastructure of the surface of dental enamel with molar incisor hypomineralization (MIH) with and without acid etching.

    PubMed

    Bozal, Carola B; Kaplan, Andrea; Ortolani, Andrea; Cortese, Silvina G; Biondi, Ana M

    2015-08-01

    The aim of the present work was to analyze the ultrastructure and mineral composition of the surface of the enamel on a molar with MIH, with and without acid etching. A permanent tooth without clinical MIH lesions (control) and a tooth with clinical diagnosis of mild and moderate MIH, with indication for extraction, were processed with and without acid etching (H3PO4 37%, 20") for observation with scanning electron microscope (SEM) ZEISS (Supra 40) and mineral composition analysis with an EDS detector (Oxford Instruments). The control enamel showed normal prismatic surface and etching pattern. The clinically healthy enamel on the tooth with MIH revealed partial loss of prismatic pattern. The mild lesion was porous with occasional cracks. The moderate lesion was more porous, with larger cracks and many scales. The mineral composition of the affected surfaces had lower Ca and P content and higher O and C. On the tooth with MIH, even on normal looking enamel, the demineralization does not correspond to an etching pattern, and exhibits exposure of crystals with rods with rounded ends and less demineralization in the inter-prismatic spaces. Acid etching increased the presence of cracks and deep pores in the adamantine structure of the enamel with lesion. In moderate lesions, the mineral composition had higher content of Ca, P and Cl. Enamel with MIH, even on clinically intact adamantine surfaces, shows severe alterations in the ultrastructure and changes in ionic composition, which affect the acid etching pattern and may interfere with adhesion. PMID:26355892

  4. Facile transition from hydrophilicity to superhydrophilicity and superhydrophobicity on aluminum alloy surface by simple acid etching and polymer coating

    NASA Astrophysics Data System (ADS)

    Liu, Wenyong; Sun, Linyu; Luo, Yuting; Wu, Ruomei; Jiang, Haiyun; Chen, Yi; Zeng, Guangsheng; Liu, Yuejun

    2013-09-01

    The transition from the hydrophilic surface to the superhydrophilic and superhydrophobic surface on aluminum alloy via hydrochloric acid etching and polymer coating was investigated by contact angle (CA) measurements and scanning electron microscope (SEM). The effects of etching and polymer coating on the surface were discussed. The results showed that a superhydrophilic surface was facilely obtained after acid etching for 20 min and a superhydrophobic surface was readily fabricated by polypropylene (PP) coating after acid etching. When the etching time was 30 min, the CA was up to 157?. By contrast, two other polymers of polystyrene (PS) and polypropylene grafting maleic anhydride (PP-g-MAH) were used to coat the aluminum alloy surface after acid etching. The results showed that the CA was up to 159? by coating PP-g-MAH, while the CA was only 141? by coating PS. By modifying the surface with the silane coupling agent before PP coating, the durability and solvent resistance performance of the superhydrophobic surface was further improved. The micro-nano concave-convex structures of the superhydrophilic surface and the superhydrophobic surface were further confirmed by scanning electron microscope (SEM). Combined with the natural hydrophilicity of aluminum alloy, the rough micro-nano structures of the surface led to the superhydrophilicity of the aluminum alloy surface, while the rough surface structures led to the superhydrophobicity of the aluminum alloy surface by combination with the material of PP with the low surface free energy.

  5. Color Stability of Enamel following Different Acid Etching and Color Exposure Times

    PubMed Central

    Jahanbin, Arezoo; Basafa, Mohammad; Moazzami, Mostafa; Basafa, Behnoush; Eslami, Neda

    2014-01-01

    Background and aims. The aim of this study was to evaluate the effect of different etching times on enamel color stability after immediate versus delayed exposure to colored artificial saliva (CAS). Materials and methods. Human first premolars were divided into five groups of twenty. A colorimeter was used according to the CIE system on the mid-buccal and mid-lingual surfaces to evaluate initial tooth color. Samples in group A remained unetched. In groups B to E, buccal and lingual surfaces were initially etched with phosphoric acid for 15 and 60 seconds, respectively. Then, the samples in groups A and C were immersed in colored artificial saliva (cola+saliva). In group B, the teeth were immersed in simple artificial saliva (AS). Samples in groups D and E were immersed in AS for 24 and 72 hours, respectively before being immersed in colored AS. The teeth were immersed for one month in each solution before color measurement. During the test period, the teeth were retrieved from the staining solution and stored in AS for five minutes. This was repeated 60 times. Color changes of buccal and lingual surfaces were calculated. Kruskal-Wallis and Wilcoxon tests were used for statistical analysis (? ?0.05). Results. There were no significant differences between the groups in term of ?E of buccal (P = 0.148) and lingual surfaces (P = 0.73). Conclusion. Extended time of etching did not result in significant enamel color change. Immediate and delayed exposure of etched enamel to staining solutions did not result in clinically detectable tooth color changes. PMID:25093048

  6. Water spray mitigation of hydrofluoric acid releases

    SciTech Connect

    Schatz, K.W.; Koopman, R.P.; Lawrence Livermore National Lab., CA )

    1989-09-01

    Two series of tests were conducted in flow chambers to assess the effectiveness of water spray in mitigating releases of Hydrogen Fluoride (HF). Bench scale experiments identified key variables for testing in a larger facility. The larger scale field tests have demonstrated that HF releases can be mitigated with water and have also quantified the impact of numerous design variables on mitigation effectiveness. HF removal efficiencies of 25 to 90+{percent} have been demonstrated at water to HF liquid ratios of 6/1 to 40/1. 81 refs., 18 figs., 1 tab.

  7. Vacuum-jacketed hydrofluoric acid solution calorimeter

    USGS Publications Warehouse

    Robie, R.A.

    1965-01-01

    A vacuum-jacketed metal calorimeter for determining heats of solution in aqueous HF was constructed. The reaction vessel was made of copper and was heavily gold plated. The calorimeter has a cooling constant of 0.6 cal-deg -1-min-1, approximately 1/4 that of the air-jacketed calorimeters most commonly used with HF. It reaches equilibrium within 10 min after turning off the heater current. Measurements of the heat of solution of reagent grade KCl(-100 mesh dried 2 h at 200??C) at a mole ratio of 1 KCl to 200 H2O gave ??H = 4198??11 cal at 25??C. ?? 1965 The American Institute of Physics.

  8. Square-wave anodic-stripping voltammetric determination of Cd, Pb, and Cu in a hydrofluoric acid solution of siliceous spicules of marine sponges (from the Ligurian Sea, Italy, and the Ross Sea, Antarctica).

    PubMed

    Truzzi, C; Annibaldi, A; Illuminati, S; Bassotti, E; Scarponi, G

    2008-09-01

    Square-wave anodic-stripping voltammetry (SWASV) was set up and optimized for simultaneous determination of cadmium, lead, and copper in siliceous spicules of marine sponges, directly in the hydrofluoric acid solution (approximately 0.55 mol L(-1) HF, pH approximately 1.9). A thin mercury-film electrode (TMFE) plated on to an HF-resistant epoxy-impregnated graphite rotating-disc support was used. The optimum experimental conditions, evaluated also in terms of the signal-to-noise ratio, were as follows: deposition potential -1100 mV vs. Ag/AgCl, KCl 3 mol L(-1), deposition time 3-10 min, electrode rotation 3000 rpm, SW scan from -1100 mV to +100 mV, SW pulse amplitude 25 mV, frequency 100 Hz, DeltaE(step) 8 mV, t(step) 100 ms, t(wait) 60 ms, t(delay) 2 ms, t(meas) 3 ms. Under these conditions the metal peak potentials were Cd -654 +/- 1 mV, Pb -458 +/- 1 mV, Cu -198 +/- 1 mV. The electrochemical behaviour was reversible for Pb, quasi-reversible for Cd, and kinetically controlled (possibly following chemical reaction) for Cu. The linearity of the response with concentration was verified up to approximately 4 microg L(-1) for Cd and Pb and approximately 20 microg L(-1) for Cu. The detection limits were 5.8 ng L(-1), 3.6 ng L(-1), and 4.3 ng L(-1) for Cd, Pb, and Cu, respectively, with t(d) = 5 min. The method was applied for determination of the metals in spicules of two specimens of marine sponges (Demosponges) from the Portofino natural reserve (Ligurian Sea, Italy, Petrosia ficiformis) and Terra Nova Bay (Ross Sea, Antarctica, Sphaerotylus antarcticus). The metal contents varied from tens of ng g(-1) to approximately 1 microg g(-1), depending on the metal considered and with significant differences between the two sponge species. PMID:18642105

  9. Distinguishing shocked from tectonically deformed quartz by the use of the SEM and chemical etching

    USGS Publications Warehouse

    Gratz, A.J.; Fisler, D.K.; Bohor, B.F.

    1996-01-01

    Multiple sets of crystallographically-oriented planar deformation features (PDFs) are generated by high-strain-rate shock waves at pressures of > 12 GPa in naturally shocked quartz samples. On surfaces, PDFs appear as narrow (50-500 nm) lamellae filled with amorphosed quartz (diaplectic glass) which can be etched with hydrofluoric acid or with hydrothermal alkaline solutions. In contrast, slow-strain-rate tectonic deformation pressure produces wider, semi-linear and widely spaced arrays of dislocation loops that are not glass filled. Etching samples with HF before examination in a scanning electron microscope (SEM) allows for unambiguous visual distinction between glass-filled PDFs and glass-free tectonic deformation arrays in quartz. This etching also reveals the internal 'pillaring' often characteristic of shock-induced PDFs. This technique is useful for easily distinguishing between shock and tectonic deformation in quartz, but does not replace optical techniques for characterizing the shock features.

  10. Comparative Study of the Effect of Acid Etching on Enamel Surface Roughness between Pumiced and Non-pumiced Teeth

    PubMed Central

    Abreu, Lucas Guimarães; Paiva, Saul Martins; Pretti, Henrique; Lages, Elizabeth Maria Bastos; Júnior, João Batista Novães; Ferreira, Ricardo Alberto Neto

    2015-01-01

    Background: The objective was to perform a comparative analysis of the effect of acid etching on enamel roughness between pumiced and non-pumiced teeth. Materials and Methods: The sample was composed of 32 dental surfaces divided into two groups: Group 1-16 surfaces having received pumice prophylaxis; and Group 2-16 surfaces not having received pumice prophylaxis. The teeth were kept in saline until the first record of surface roughness prior to etching. For each surface, a roughness graph was obtained through trials using a surface roughness tester. This procedure was repeated two more times at different locations for a total of three readings which, later, were converted in a mean value. The teeth were then acid etched with a 37% phosphoric acid for 60 s, rinsed with water, air dried, and tested with the roughness tester again using the same protocol described for baseline. The Quantikov image analysis program was used to measure the length of the graphs. The average value of the lengths was recorded for each surface before and after etching. The increase in roughness caused by acid etching was calculated and compared between groups. Results: The mean increase in roughness caused by the etching was 301 µm (11.37%) in Group 1 and 214 µm (8.33%) in Group 2. No statistically significant difference was found between samples with and without pumice prophylaxis (P = 0.283). Conclusion: The present study showed that the effect of acid etching on enamel roughness was not significantly affected by prior pumice prophylaxis. PMID:26435607

  11. Reliability evaluation of alumina-blasted/acid-etched versus laser-sintered dental implants.

    PubMed

    Almeida, Erika O; Jnior, Amilcar C Freitas; Bonfante, Estevam A; Silva, Nelson R F A; Coelho, Paulo G

    2013-05-01

    Step-stress accelerated life testing (SSALT) and fractographic analysis were performed to evaluate the reliability and failure modes of dental implant fabricated by machining (surface treated with alumina blasting/acid etching) or laser sintering for anterior single-unit replacements. Forty-two dental implants (3.75 10 mm) were divided in two groups (n=21 each): laser sintered (LS) and alumina blasting/acid etching (AB/AE). The abutments were screwed to the implants and standardized maxillary central incisor metallic crowns were cemented and subjected to SSALT in water. Use-level probability Weibull curves and reliability for a mission of 50,000 cycles at 200 N were calculated. Polarized light and scanning electron microscopes were used for failure analyses. The Beta (?) value derived from use-level probability Weibull calculation of 1.48 for group AB/AE indicated that damage accumulation likely was an accelerating factor, whereas the ? of 0.78 for group LS indicated that load alone likely dictated the failure mechanism for this group, and that fatigue damage did not appear to accumulate. The reliability was not significantly different (p>0.9) between AB/AE (61 %) and LS (62 %). Fracture of the abutment and fixation screw was the chief failure mode. No implant fractures were observed. No differences in reliability and fracture mode were observed between LS and AB/AE implants used for anterior single-unit crowns. PMID:22843309

  12. Cell adhesion and in vivo osseointegration of sandblasted/acid etched/anodized dental implants.

    PubMed

    Kim, Mu-Hyon; Park, Kyeongsoon; Choi, Kyung-Hee; Kim, Soo-Hong; Kim, Se Eun; Jeong, Chang-Mo; Huh, Jung-Bo

    2015-01-01

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC) of Modi-ANO Ti (74.20%10.89%) was much greater than those of machined (33.58%8.63%), SLA (58.47%12.89), or ANO Ti (59.62%18.30%). In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant. PMID:25955650

  13. In vitro remineralization of acid-etched human enamel with Ca 3SiO 5

    NASA Astrophysics Data System (ADS)

    Dong, Zhihong; Chang, Jiang; Deng, Yan; Joiner, Andrew

    2010-02-01

    Bioactive and inductive silicate-based bioceramics play an important role in hard tissue prosthetics such as bone and teeth. In the present study, a model was established to study the acid-etched enamel remineralization with tricalcium silicate (Ca 3SiO 5, C 3S) paste in vitro. After soaking in simulated oral fluid (SOF), Ca-P precipitation layer was formed on the enamel surface, with the prolonged soaking time, apatite layer turned into density and uniformity and thickness increasingly from 250 to 350 nm for 1 day to 1.7-1.9 μm for 7 days. Structure of apatite crystals was similar to that of hydroxyapatite (HAp). At the same time, surface smoothness of the remineralized layer is favorable for the oral hygiene. These results suggested that C 3S treated the acid-etched enamel can induce apatite formation, indicating the biomimic mineralization ability, and C 3S could be used as an agent of inductive biomineralization for the enamel prosthesis and protection.

  14. Cell Adhesion and in Vivo Osseointegration of Sandblasted/Acid Etched/Anodized Dental Implants

    PubMed Central

    Kim, Mu-Hyon; Park, Kyeongsoon; Choi, Kyung-Hee; Kim, Soo-Hong; Kim, Se Eun; Jeong, Chang-Mo; Huh, Jung-Bo

    2015-01-01

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC) of Modi-ANO Ti (74.20% ± 10.89%) was much greater than those of machined (33.58% ± 8.63%), SLA (58.47% ± 12.89), or ANO Ti (59.62% ± 18.30%). In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant. PMID:25955650

  15. Stretchability of Silver Films on Thin Acid-Etched Rough Polydimethylsiloxane Substrates Fabricated by Electrospray Deposition

    NASA Astrophysics Data System (ADS)

    Mehdi, S. M.; Cho, K. H.; Kang, C. N.; Choi, K. H.

    2015-07-01

    This paper investigates the fabrication of Ag films through the electrospray deposition (ESD) technique on sub-millimeter-thick acid-etched rough polydimethylsiloxane (PDMS) substrates having both low and high modulus of elasticity. The main focus of the study is on the stretchable behavior of ESD-deposited Ag nanoparticles-based thin films on these substrates when subjected to axial strains. Experimental results suggest that the as-fabricated films on thin acid-etched rough low modulus PDMS has an average stretchability of 5.6% with an average increase in the resistance that is 23 times that of the initial resistance at electrical failure (complete rupture of the films). Comparatively, the stretchability of Ag films on the high modulus PDMS was found to be 3 times higher with 4.65 times increase in the resistance at electrical failure. Also, a high positive value of the piezoresistive coefficient for these films suggests that the resistivity changes during stretching, and thus deviation from the simplified models is inevitable. Based on these results, new models are presented that quantify the changes in resistance with strain.

  16. Restoration of obliterated engraved marks on steel surfaces by chemical etching reagent.

    PubMed

    Song, Qingfang

    2015-05-01

    Chemical etching technique is widely used for restoration of obliterated engraved marks on steel surface in the field of public security. The consumed thickness of steel surface during restoration process is considered as a major criterion for evaluating the efficiency of the chemical etching reagent. The thinner the consumed thickness, the higher the restoration efficiency. According to chemical principles, maintaining the continuous oxidative capabilities of etching reagents and increasing the kinetic rate difference of the reaction between the engraved and non-engraved area with the chemical etching reagent can effectively reduce the consumed steel thickness. The study employed steel surface from the engine case of motorcycle and the car frame of automobile. The chemical etching reagents are composed of nitric acid as the oxidizer, hydrofluoric acid as the coordination agent and mixed with glacial acetic acid or acetone as the solvents. Based on the performance evaluation of three different etching reagents, the one composed of HNO3, HF and acetone gave the best result. PMID:25771134

  17. Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching

    NASA Astrophysics Data System (ADS)

    Rabah, Hanfoug; Alain, Salesse; Claude, Alibert

    2001-02-01

    The GaAs etching by the hydrogen peroxide-succinic acid mixture in an ammoniacal medium was studied, and the activation energy of the overall reaction was determined. It was shown that diffusion influences the etching sections and the roughness of the etched surface. Optimal conditions for etching (pH, temperature, agitation, thiourea concentration) were established by observing the samples' surfaces using optical microscopy and atomic force microscopy (AFM). The addition of thiourea to the etching bath leads to a very significant reduction in the surface's roughness. The increase in the intensity of the photoluminescence at 4 K of the etched GaAs samples in the bath containing thiourea could indicate a definite reduction in nonradiative emissions, and therefore a passivation of the surface.

  18. Noble Gases and Nitrogen Released from a Lunar Soil Pyroxene Separate by Acid Etching

    NASA Astrophysics Data System (ADS)

    Rider, P. E.

    1993-07-01

    We report initial results from a series of experiments designed to measure recently implanted solar wind (SW) ions in lunar soil mineral grains [1]. An acid-etching technique similar to the CSSE method developed at ETH Zurich was used to make abundance and isotope measurements of the SW noble gas and nitrogen compositions. Among the samples examined was a pyroxene separate from soil 75081. It was first washed with H2O to remove contamination from the sample finger walls and grain surfaces. H2O also acted as a weak acid, releasing gases from near-surface sites. Treatment with H2SO3 followed the water washes. Acid pH (~1.8 to ~1.0) and temperature (~23 degrees C to ~90 degrees C) and duration of acid attack (several minutes to several days) were varied from step to step. Finally, the sample was pyrolyzed in several steps to remove the remaining gases, culminating with a high-temperature pyrolysis at 1200 degrees C. Measurements of the light noble gases were mostly consistent with those from previous CSSE experiments performed on pyroxene [2,3]. It should be noted, however, that the Zurich SEP component was not easily distinguishable in the steps where it was expected to be observed. We suspect our experimental protocol masked the SEP reservoir, preventing us from seeing its distinctive signature. The most interesting results from this sample are its Kr and Xe isotopic and elemental compositions. Pyroxene apparently retains heavy noble gases as well as ilmenite (and plagioclase [4]). The heavy noble gas element ratios from this sample along with those previously reported [5,6] are, however, considerably heavier than the theoretically determined "solar system" values [7,8]. Explanations for the difference include the possibility that the derivations are incorrect, that there is another component of lunar origin mixing with the solar component, or that some type of loss mechanism is altering the noble gas reservoirs of the grains. The Kr and Xe isotopic compositions for the two acid-etch steps most likely to have released SW gases were identical to the "solar" values reported by the Zurich group [5]. The krypton from both steps appeared to be mixtures of "solar" krypton, an isotopically heavier component (perhaps the Zurich SEP component [5]), and a spallation component. There was, however, no evidence for such a mixture in the xenon. The compositions of the two acid-etch steps were clearly combinations of a solar Xe component and a Xe spallation component. They were also identical to that of U-Xe [9] for isotopes up to 132Xe, with the exception of an ~300 per mil enhancement of the 126Xe/132Xe ratio. This anomaly does not appear to be an artifact of spallation correction. These measurements constitute the first experimental verification of the U-Xe composition for isotopes lighter than 134Xe. Persistent contamination problems and the possibility of nitrogen being held back in the acid residue during the etching process make interpretation of the nitrogen data uncertain. However, results from the steps not obviously affected by contamination show an enhancement of N over Ar by 2x to 12x the "solar" value (from [8]). References: [1] Rider P. E. and Pepin R. O. (1993) GCA, submitted. [2] Wieler R. et al. (1986) GCA, 50, 1997-2017. [3] Benkert J.-P. (1989) Ph.D. thesis, ETH Zurich (No. 8812). [4] Wieler R. (1993) personal communication. [5] Wieler R. et al. (1992) LPS XXIII, 1525-1526. [6] Wieler R. et al. (1993) LPS XXIV, 1519-1520. [7] Anders E. and Grevesse N. (1989) GCA, 53, 197-214. [8] Cameron A. G. W. (1982) In Essays in Nuclear Physics (Barnes et al., eds.), 23-43. [9] Pepin R. O.(1991) Icarus, 92, 2-79.

  19. Ultradeep fused silica glass etching with an HF-resistant photosensitive resist for optical imaging applications

    NASA Astrophysics Data System (ADS)

    Nagarah, John M.; Wagenaar, Daniel A.

    2012-03-01

    Microfluidic and optical sensing platforms are commonly fabricated in glass and fused silica (quartz) because of their optical transparency and chemical inertness. Hydrofluoric acid (HF) solutions are the etching media of choice for deep etching into silicon dioxide substrates, but processing schemes become complicated and expensive for etching times greater than 1 h due to the aggressiveness of HF migration through most masking materials. We present here etching into fused silica more than 600 m deep while keeping the substrate free of pits and maintaining a polished etched surface suitable for biological imaging. We utilize an HF-resistant photosensitive resist (HFPR) which is not attacked in 49% HF solution. Etching characteristics are compared for substrates masked with the HFPR alone and the HFPR patterned on top of Cr/Au and polysilicon masks. We used this etching process to fabricate suspended fused silica membranes, 8-16 m thick, and show that imaging through the membranes does not negatively affect image quality of fluorescence microscopy of biological tissue. Finally, we realize small through-pore arrays in the suspended membranes. Such devices will have applications in planar electrophysiology platforms, especially where optical imaging is required.

  20. Comparative evaluation of retentive properties of acid etched resin bonded fixed partial dentures

    PubMed Central

    Arora, Vimal; Sharma, M.C.; Dwivedi, Ravi

    2013-01-01

    Background Little consensus exist in suitable tooth preparation design and alloy pre-treatment methods for improving the retention of resin bonded fixed partial dentures (RBFPDs). Methods An in-vitro experiment was done with four designs. Group A: standard form, B: wings and proximal slices, C: wings, proximal slice and grooves, D: wings, proximal slice, grooves and occlusal coverage. Alloys were subjected to pre-treatment procedures like Group I: control, II: sand blasting, III: electro etching, IV: tin plating. Debonding forces of the castings were recorded in a universal testing machine and results were analyzed by student's ‘t’ test. Results Group B, C and D showed higher debonding forces compared to A. However, there were no significant differences in mean force values among Groups B, C and D. Group II, III and IV with different alloy pre-treatment methods demonstrated higher values against control. Inter group variations among Group II, III and IV were not significant. Conclusion Tooth preparation with adequate surface extensions and pre-treatment procedures of casting alloys are two parameters that play important role in determining the retentive features of RBFPDs. Different types of tooth preparation designs and alloy pre-treatment methods exert almost similar influence in increasing the retention of acid etched RBFPDs. PMID:24623948

  1. Influence of Organic Acids from the Oral Biofilm on the Bond Strength of Self-Etch Adhesives to Dentin.

    PubMed

    Amaral, Cristiane Mariote; Correa, Danielly de S; Miragaya, Luciana Meirelles; Silva, Eduardo Moreira da

    2015-10-01

    The aim of this study was to evaluate the microtensile bond strength of self-etch adhesive systems to dentin after storage in acids from oral biofilm. Three adhesive systems were used in the study: a two-step self-etch adhesive for use with a silorane-based resin composite (Filtek P90 adhesive system - P90), a two-step self-etch adhesive (Clearfil SE Bond - CSE) and a one-step self-etch adhesive (Adper Easy One - AEO). The bond strength of these products was evaluated by bonding resin composite (Filtek Z350 for CSE and AEO; and Filtek P90 for P90) to 90 bovine dentin tooth fragments, according to the manufacturer's instructions. After 24 h of water storage at 37 C, the specimens were sectioned into beams (1 mm2) divided and stored in distilled water, lactic acid and propionic acid, for 7 and 30 days. After storage, the specimens were tested for microtensile bond strength. Data were analyzed by three-way ANOVA and Tukeys test (?=0.05). CSE presented the highest microtensile bond strength after storage in distilled water for 7 and 30 days. The microtensile bond strength of all adhesive systems was lower after storage in lactic acid and propionic acid than after water storage. Significant difference was not found between storage times. PMID:26647935

  2. Comparative Evaluation of Tensile – Bond Strength of An Orthodontic Adhesive with and without Fluoride Application, After Acid Etching -An Invitro Study

    PubMed Central

    Yugandhar, G; Ramana, I Venkata; Srinivas, K; Yadav, S. Sarjeev Singh

    2015-01-01

    Background Fixed appliances hinder the effective control of plaque accumulation and white spot lesions may develop under the ill fitting bands or adjacent to the stainless steel brackets during orthodontic treatment particularly the etching process. Aims and Objectives Comparative study of tensile bond strength of an orthodontic adhesive with and without fluoride application after acid etching to know the effect of fluoride on bond strength. Materials and Methods This study is carried out on 90 non carious human premolar teeth, and divided in 6 groups with each group of 15 specimens. In those Groups I and IV were control group acid etch treatment, Group II and V is 1.23% APF gel (acid etch plus APF gel treatment,) and group III and VI is 8% SnF2 (acid etch plus SnF2 treatment). Samples of Group I, II and III bond strength were tested after 24 h and groups IV, V and VI after one month on microtechtensometer machine. The scanning electron microscope (SEM) investigation was carried out for the 2 specimens for the control group after acid etch and 4 specimens after acid etch with fluoride application for fluoride groups. Results Control and SnF2 treated groups was found to be nearly similar to the control group whereas APF treated group showed less focal holes than the other 2 groups. Conclusion Fluoride application after acid etching without having an adverse effect on bond strength but we can prevent the white spot lesions and caries. PMID:26023648

  3. Assessment of the penetration depth of dental adhesives through deproteinized acid-etched dentin using neodymium:yttrium-aluminum-garnet laser and sodium hypochlorite.

    PubMed

    Dayem, Raad Niama

    2010-01-01

    The objective of this study was to assess the penetration depth of dental adhesive systems through acid-etched dentin, deproteinized by neodymium:yttrium-aluminum-garnet (Nd:YAG) laser or 10% sodium hypochlorite (NaOCl) solution, using fluorescent light microscopy. Sixty extracted human upper premolars were selected to be given standardized buccal and lingual class V cavities. The teeth were randomly divided into two groups, each one consisting of 30 teeth and each group subdivided into three subgroups, each having ten teeth (20 cavities): group 1, Excite bonding system, which was subdivided into group 1a, acid etch/Nd:YAG laser plus Excite bond, group 1b, acid etch/10%NaOCl plus Excite bond, and group 1c, acid etch plus Excite bond; group 2, Solobond Plus bonding system, which was subdivided into group 2a, acid etch/Nd:YAG laser plus Solobond Plus bond, group 2b, acid etch/10%NaOCl plus Solobond Plus bond, and group 2c, acid etch plus Solobond Plus bond. The teeth were prepared for fluorescent light microscopy (FLM) analysis, and the results showed that treatment of the acid-etched dentin with Nd:YAG laser had led to a significant increase in the penetration depth of the adhesive bonding system, and that the maximum penetration depth of the adhesive bonding system through acid-etched, Nd:YAG-lased dentin was significantly more than that of acid-etched, 10% NaOCl-treated dentin. The Solobond Plus bonding system showed maximum penetration depth, more than that of the Excite bonding system. PMID:18648868

  4. Two-dimensional nanostructures on optical glass via nanosphere lithography and vapor HF etching

    NASA Astrophysics Data System (ADS)

    Wang, Elmer; Zhao, Yang

    2013-09-01

    It is desired to have artificial optical materials with controllable optical properties. One approach is to create composite materials with nanomachining and nanostructures. In this research, two-dimensional (2D) nanostructures were created on the surface of optical glass using nanosphere lithography. The effective refractive index of the artificial layer is smaller than the refractive index of the substrate and can be varied by changing the size of the nanoparticles and depth of etching. In comparison with conventional techniques, this approach is more efficient and cost-effective for the creation of large areas of thin surface layers as an artificial material. A uniform monolayer of 200 nm polystyrene nanospheres was deposited on soda-lime glass slides. Deposition was performed via a slide-coating technique to take advantage of capillary forces. The slides were etched with vapor-phase hydrofluoric acid (HF) to create 2D structures. Vapor-phase etching was selected in order to etch the substrate without disturbing the monolayer nanoparticle mask. The etching rate of nanostructures was studied. An atomic force microscope (AFM) was used to monitor the nanosphere monolayers and etching analysis. It was shown that the nanoparticle pattern was successfully transferred to the surface of the substrate. The resultant thin-layer of modified substrate serves as an artificial material with a desired refractive index which modifies the surface reflection and transmission properties. The substrate with the created artificial material layer demonstrated reduced reflectivity in optical wavelengths.

  5. Effect of etching time and light source on the bond strength of metallic brackets to ceramic.

    PubMed

    Gonalves, Paulo Roberto Amaral; Moraes, Rafael Ratto de; Costa, Ana Rosa; Correr, Amrico Bortolazzo; Nouer, Paulo Roberto Aranha; Sinhoreti, Mrio Alexandre Coelho; Correr-Sobrinho, Loureno

    2011-01-01

    This study evaluated the bond strength of brackets to ceramic testing different etching times and light sources for photo-activation of the bonding agent. Cylinders of feldspathic ceramic were etched with 10% hydrofluoric acid for 20 or 60 s. After application of silane on the ceramic surface, metallic brackets were bonded to the cylinders using Transbond XT (3M Unitek). The specimens for each etching time were assigned to 4 groups (n=15), according to the light source: XL2500 halogen light, UltraLume 5 LED, AccuCure 3000 argon laser, and Apollo 95E plasma arc. Light-activation was carried out with total exposure times of 40, 40, 20 and 12 s, respectively. Shear strength testing was carried out after 24 h. The adhesive remnant index (ARI) was evaluated under magnification. Data were subjected to two-way ANOVA and Tukey's test (?=0.05). Specimens etched for 20 s presented significantly lower bond strength (p<0.05) compared with those etched for 60 s. No significant differences (p>0.05) were detected among the light sources. The ARI showed a predominance of scores 0 in all groups, with an increase in scores 1, 2 and 3 for the 60 s time. In conclusion, only the etching time had significant influence on the bond strength of brackets to ceramic. PMID:21915523

  6. Mixed matrix membranes with HF acid etched ZSM-5 for ethanol/water separation: Preparation and pervaporation performance

    NASA Astrophysics Data System (ADS)

    Zhan, Xia; Lu, Juan; Tan, Tingting; Li, Jiding

    2012-10-01

    The mixed matrix membranes (MMMs) were prepared from crosslinked PDMS incorporated with HF acid etched ZSM-5. ZSM-5 zeolite was etched with a series of HF aqueous-acetone solution and characterized by SEM, BET, XRD and FT-IR. It was found that HF etching process was very effective for removing organic impurities in zeolite and micro-pores were observed out of the surface of zeolite particles, which enhanced the hydrophobicity and surface roughness of ZSM-5 successfully. Both tensile strength and swelling resistance of ZSM-5/PDMS MMMs increased with the rising concentration of HF solution, which can mainly be attributed to the improved zeolite-PDMS interfacial adhesion resulted from the intrusion of PDMS into micro-pores out of the ZSM-5 surface. Subsequently, the sorption experiment was performed with the results suggesting preferential sorption of ethanol by MMMs. Moreover, the sorption selectivity of ZSM-5/PDMS MMMs increased notably as the concentration of HF solution increased. The pervaporation performance of ethanol/water mixtures using MMMs was also investigated in detail. The MMMs filled with etched ZSM-5 showed much better selectivity than that filled with non-etched ones, with a little expense of permeability. It was found that with the same zeolite loading, increasing the HF acid concentration in etching process enhanced the zeolite-PDMS interfacial adhesion which promoted the ethanol selectivity of MMMs, while depressed the total permeation flux a little. In addition, both ethanol permeation and the selectivity increased with an increase of the zeolite loading from 10% to 30%. Nevertheless, excessive zeolite loading or decreasing thickness of selective layer led to the poor selectivity to ethanol. A decline of the ethanol selectivity was also observed as the feed ethanol concentration as well as feed temperature increased.

  7. Optimization of HNA etching parameters to produce high aspect ratio solid silicon microneedles

    NASA Astrophysics Data System (ADS)

    Hamzah, A. A.; Abd Aziz, N.; Yeop Majlis, B.; Yunas, J.; Dee, C. F.; Bais, B.

    2012-09-01

    High aspect ratio solid silicon microneedles with a concave conic shape were fabricated. Hydrofluoric acid-nitric acid-acetic acid (HNA) etching parameters were characterized and optimized to produce microneedles that have long and narrow bodies with smooth surfaces, suitable for transdermal drug delivery applications. The etching parameters were characterized by varying the HNA composition, the optical mask's window size, the etching temperature and bath agitation. An L9 orthogonal Taguchi experiment with three factors, each having three levels, was utilized to determine the optimal fabrication parameters. Isoetch contours for HNA composition with 0% and 10% acetic acid concentrations were presented and a high nitric acid region was identified to produce microneedles with smooth surfaces. It is observed that an increase in window size indiscriminately increases the etch rate in both the vertical and lateral directions, while an increase in etching temperature beyond 35 C causes the etching to become rapid and uncontrollable. Bath agitation and sample placement could be manipulated to achieve a higher vertical etch rate compared to its lateral counterpart in order to construct high aspect ratio microneedles. The Taguchi experiment performed suggests that a HNA composition of 2:7:1 (HF:HNO3:CH3COOH), window size of 500 m and agitation rate of 450 RPM are optimal. Solid silicon microneedles with an average height of 159.4 m, an average base width of 110.9 m, an aspect ratio of 1.44, and a tip angle and diameter of 19.2 and 0.38 m respectively were successfully fabricated.

  8. The impact of etching during microfabrication on the microstructure and the electrical conductivity of gadolinia-doped ceria thin films

    NASA Astrophysics Data System (ADS)

    Bieberle-Htter, Anja; Reinhard, Patrick; Rupp, Jennifer L. M.; Gauckler, Ludwig J.

    2011-08-01

    Gadolinia-doped ceria, Ce0.8Gd0.2O1.9-x (CGO), thin films deposited by spray pyrolysis and annealed to different degree of crystallinity between 0% and 95% are exposed to different etchants and etching methods. The attack of the etchants on the CGO thin films is analyzed with respect to changes in microstructure and in-plane electrical conductivity. It is found that amorphous CGO films are dissolved in hydrochloric acid after elongated etching times. Hydrofluoric acid severely attacks CGO thin films after already short times of exposure (1 min), more intense the less crystalline the thin film is. Ar ion etching smoothens the surface of the CGO thin films without considerable removal of material. No microstructural attack of NaOH, CHF3/O2 and SF6/Ar is found. The electrical conductivity is in general only affected when microstructural changes are severe. Therefore, it is concluded that CGO thin films can be well used as functional layers in micro-fabricated devices and that micro-fabrication is, with the exception of hydrofluoric, not harmful for the electrical properties of crystalline CGO thin films.

  9. Fabrication of glass micro-prisms using ultra-fast laser pulses with chemical etching process

    NASA Astrophysics Data System (ADS)

    Luo, Shao-Wei; Chang, Tien-Li; Tsai, Hung-Yin

    2012-02-01

    In this study, a new process of glass micro-prism structures is investigated by an ultra-fast laser irradiation with chemical etching process. The ultra-fast laser is employed by an all-in-one femtosecond laser (FS-laser) system with the amplifier as an excitation source for patterning the structures. Here, the center wavelength of laser is frequency-doubled to 517 nm. Besides, the repetition rate and pulse width of laser are 100 kHz and 350 fs, respectively. First, the embedded gratings of glass with different pitches can be fabricated using a FS-laser process. Afterwards, the glass samples are placed in the hydrofluoric acid (HF) solution for 15 min to develop structures. Finally, the results of this study demonstrated that the V-cut micro-prisms are successfully formed by controlling etching concentration between intrinsic glass material and modified areas.

  10. HF-(NH₄)₂S₂O₈-HCl Mixtures for HNO₃- and NOx-free Etching of Diamond Wire- and SiC-Slurry-Sawn Silicon Wafers: Reactivity Studies, Surface Chemistry, and Unexpected Pyramidal Surface Morphologies.

    PubMed

    Stapf, André; Gondek, Christoph; Lippold, Marcus; Kroke, Edwin

    2015-04-29

    The wet-chemical treatment of silicon wafers is an important production step in photovoltaic and semiconductor industries. Solutions containing hydrofluoric acid, ammonium peroxodisulfate, and hydrochloric acid were investigated as novel acidic, NOx-free etching mixtures for texturization and polishing of monocrystalline silicon wafers. Etching rates as well as generated surface morphologies and properties are discussed in terms of the composition of the etching mixture. The solutions were analyzed with Raman and UV/vis spectroscopy as well as ion chromatography (IC). The silicon surfaces were investigated by scanning electron microscopy (SEM), confocal laser scanning microscopy (CLSM), diffuse reflection infrared spectroscopy (DRIFT), and X-ray photoelectron spectroscopy (XPS). Surprisingly, pyramidal surface structures were found after etching SiC-slurry as well as diamond wire-sawn monocrystalline Si(100) wafers with hydrochloric acid-rich HF-(NH4)2S2O8-HCl mixtures. Acidic etching solutions are generally not known for anisotropic etching. Thus, the HNO3-free mixtures might allow to replace KOH/i-propanol and similar alkaline solutions for texturization of monosilicon wafers at room temperature with less surface contamination. Besides, common HNO3-based etching mixtures may be replaced by the nitrate-free system, leading to significant economic and ecological advantages. PMID:25826145

  11. Bone contact around acid-etched implants: a histological and histomorphometrical evaluation of two human-retrieved implants.

    TOXLINE Toxicology Bibliographic Information

    Degidi M; Petrone G; Iezzi G; Piattelli A

    2003-01-01

    The surface characteristics of dental implants play an important role in their clinical success. One of the most important surface characteristics of implants is their surface topography or roughness. Many techniques for preparing dental implant surfaces are in clinical use: turning, plasma spraying, coating, abrasive blasting, acid etching, and electropolishing. The Osseotite surface is prepared by a process of thermal dual etching with hydrochloric and sulfuric acid, which results in a clean, highly detailed surface texture devoid of entrapped foreign material and impurities. This seems to enhance fibrin attachment to the implant surface during the clotting process. The authors retrieved 2 Osseotite implants after 6 months to repair damage to the inferior alveolar nerve. Histologically, both implants appeared to be surrounded by newly formed bone. No gaps or fibrous tissues were present at the interface. The mean bone-implant contact percentage was 61.3% (+/- 3.8%).

  12. Porous siliconformation and etching process for use in silicon micromachining

    DOEpatents

    Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

    1991-01-01

    A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

  13. Facet dependent binding and etching: ultra-sensitive colorimetric visualization of blood uric acid by unmodified silver nanoprisms.

    TOXLINE Toxicology Bibliographic Information

    Tan K; Yang G; Chen H; Shen P; Huang Y; Xia Y

    2014-09-15

    By combination of experiments and density functional theory calculations, we present a simple but effective "facet dependent binding and etching" strategy for non-enzymatic and non-aggregated colorimetric sensing of blood uric acid (UA), using unmodified Ag nanoprisms as the signal readout. In the absence of UA, the triangular Ag nanoprisms are etched alongside (110) facets by H2O2 and form round nanodiscs, and a more than 160 nm surface plasmon resonance (SPR) blue shift is observed. Because of special affinity between UA and side facets of the Ag nanoprisms, pre-added UA can well protect the Ag nanoprisms from etching. Such protection effect can be used for well quantifying UA in the range of 10-3000 nM, based on the inverse proportion of the SPR blue shift with the added analyte. Due to very thin plate morphology (5 nm) and facet dependent binding/etching effects of the Ag nanoprisms, the sensing system has ultrahigh sensitivity. The detection limit is only 10nM, which is about 2 to 4 orders of magnitude lower than that of previous colorimetric sensing systems. In addition to accurate quantitation, the proposed strategy can conveniently discriminate the patient of hyperuricemia from normal person by naked eyes. So, the present simple, low-cost and visualized UA chemosensor has great potential in the applications for point-of-care diagnostics.

  14. Facet dependent binding and etching: ultra-sensitive colorimetric visualization of blood uric acid by unmodified silver nanoprisms.

    PubMed

    Tan, Kanghui; Yang, Guang; Chen, Huide; Shen, Pengfei; Huang, Yucheng; Xia, Yunsheng

    2014-09-15

    By combination of experiments and density functional theory calculations, we present a simple but effective "facet dependent binding and etching" strategy for non-enzymatic and non-aggregated colorimetric sensing of blood uric acid (UA), using unmodified Ag nanoprisms as the signal readout. In the absence of UA, the triangular Ag nanoprisms are etched alongside (110) facets by H2O2 and form round nanodiscs, and a more than 160 nm surface plasmon resonance (SPR) blue shift is observed. Because of special affinity between UA and side facets of the Ag nanoprisms, pre-added UA can well protect the Ag nanoprisms from etching. Such protection effect can be used for well quantifying UA in the range of 10-3000 nM, based on the inverse proportion of the SPR blue shift with the added analyte. Due to very thin plate morphology (5 nm) and facet dependent binding/etching effects of the Ag nanoprisms, the sensing system has ultrahigh sensitivity. The detection limit is only 10nM, which is about 2 to 4 orders of magnitude lower than that of previous colorimetric sensing systems. In addition to accurate quantitation, the proposed strategy can conveniently discriminate the patient of hyperuricemia from normal person by naked eyes. So, the present simple, low-cost and visualized UA chemosensor has great potential in the applications for point-of-care diagnostics. PMID:24732599

  15. Comparison of separation performance of laser-ablated and wet-etched microfluidic devices

    PubMed Central

    Baker, Christopher A.; Bulloch, Rayford; Roper, Michael G.

    2010-01-01

    Laser ablation of glass allows for production of microfluidic devices without the need of hydrofluoric acid and photolithography. The goal of this study was to compare the separation performance of microfluidic devices produced using a low-cost laser ablation system and conventional wet etching. During laser ablation, cracking of the glass substrate was prevented by heating the glass to 300C. A range of laser energy densities was found to produce channel depths ranging from 4 35 ?m and channel widths from 118 162 ?m. The electroosmotic flow velocity was lower in laser-ablated devices, 0.110 0.005 cm s?1, as compared to wet-etched microfluidic chips, 0.126 0.003 cm s?1. Separations of both small and large molecules performed on both wet- and laser-ablated devices were compared by examining limits of detection, theoretical plate count, and peak asymmetry. Laser-induced fluorescence detection limits were 10 pM fluorescein for both types of devices. Laser-ablated and wet-etched microfluidic chips had reproducible migration times with ? 2.8% RSD and peak asymmetries ranging from 1.0 1.8. Numbers of theoretical plates were between 2.8- and 6.2-fold higher on the wet-etched devices compared to laser-ablated devices. Nevertheless, resolution between small and large analytes was accomplished, which indicates that laser ablation may find an application in pedagogical studies of electrophoresis or microfluidic devices, or in settings where hydrofluoric acid cannot be used. PMID:20827468

  16. Parallel fabrication of high-aspect-ratio all-silicon grooves using femtosecond laser irradiation and wet etching

    NASA Astrophysics Data System (ADS)

    Li, Yanna; Chen, Tao; Pan, An; Li, Cunxia; Tang, Litie

    2015-11-01

    This paper introduces a simple method using 800?nm femtosecond laser irradiation and wet etching with a hydrofluoric (HF) acid solution for the parallel fabrication of high-aspect-ratio all-silicon groove arrays. In this method, one laser beam was divided into five beams by a diffractive optical element. Five laser-induced structure change (LISC) zones were formed in the silicon simultaneously with a single scan of the divided beams, and then the materials in the LISC zones were etched by HF acid solution to form groove arrays. Via this method, all-silicon grooves with aspect ratios up to 39.4 were produced, and the processing efficiency could be increased by five times in contrast with that of the single laser beam irradiation. Furthermore, high-aspect-ratio grooves with near uniform morphologies were fabricated using this method in silicon wafers with different crystal orientations.

  17. Comparison of bond strength and surface morphology of dental enamel for acid and Nd-YAG laser etching

    NASA Astrophysics Data System (ADS)

    Parmeswearan, Diagaradjane; Ganesan, Singaravelu; Ratna, P.; Koteeswaran, D.

    1999-05-01

    Recently, laser pretreatment of dental enamel has emerged as a new technique in the field of orthodontics. However, the changes in the morphology of the enamel surface is very much dependent on the wavelength of laser, emission mode of the laser, energy density, exposure time and the nature of the substance absorbing the energy. Based on these, we made a comparative in vitro study on laser etching with acid etching with reference to their bond strength. Studies were conducted on 90 freshly extracted, non carious, human maxillary or mandibular anteriors and premolars. Out of 90, 60 were randomly selected for laser irradiation. The other 30 were used for conventional acid pretreatment. The group of 60 were subjected to Nd-YAG laser exposure (1060 nm, 10 Hz) at differetn fluences. The remaining 30 were acid pretreated with 30% orthophosphoric acid. Suitable Begg's brackets were selected and bound to the pretreated surface and the bond strength were tested using Instron testing machine. The bond strength achieved through acid pretreatment is found to be appreciably greater than the laser pretreated tooth. Though the bond strength achieved through the acid pretreated tooth is found to be significantly greater than the laser pretreated specimens, the laser pretreatement is found to be successful enough to produce a clinically acceptable bond strength of > 0.60 Kb/mm. Examination of the laser pre-treated tooth under SEM showed globule formation which may produce the mechanical interface required for the retention of the resin material.

  18. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    NASA Astrophysics Data System (ADS)

    Ghulinyan, M.; Bernard, M.; Bartali, R.; Pucker, G.

    2015-12-01

    In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  19. TMAH wet etching of silicon micro- and nano-fins for selective sidewall epitaxy of III-Nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Liu, Lianci; Myasishchev, Denis; Kuryatkov, Vladimir; Nikishin, Sergey; Holtz, Mark; Harris, Rusty

    2011-10-01

    We describe formation of silicon micro- and nano-fins, with (111)-plane sidewall facets, for selective sidewall epitaxy of III-Nitride semiconductors. The fins are produced by wet etching (110)-oriented silicon wafers. Silicon dioxide is deposited using plasma enhanced chemical vapor deposition for producing a hard mask. The silicon dioxide is patterned using photo- and electron-beam lithography for micro- and nano-fins, respectively, followed by wet etching in hydrofluoric acid. Wet etching to produce the silicon fins is carried out using tetramethyl ammonium hydroxide (TMAH) diluted with isopropyl alcohol (IPA). Atomic force microscopy and scanning electron microscopy are used to determine morphology including the surface roughness of the area between fins and the etching rate of silicon. We tune the etching time, temperature, and percentage of IPA in order to get the best surface on both (111) and (110) planes. Adding IPA is found to alter the etch rate and improve the surface between the fins without adversely affecting the sidewall morphology.

  20. Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver.

    PubMed

    Chen, Chia-Yun; Wong, Ching-Ping

    2015-01-21

    Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag(+)-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag(+) and NO3(-) ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation. PMID:25489862

  1. Effect of Fluoride on the Morphology of Calcium Phosphate Crystals Grown on Acid-Etched Human Enamel

    PubMed Central

    Fan, Y.; Sun, Z.; Moradian-Oldak, J.

    2009-01-01

    The aim of this study was to examine the effect of fluoride ion concentration on the morphology of calcium phosphate crystals grown on acid-etched enamel as a model for tooth enamel erosion. Samples were immersed in calcification solution for 16 h and changes in crystal morphology were monitored by field emission scanning electron microscopy. Without fluoride, plate-like octacalcium phosphate crystals (20 nm thick, 2–10 μm wide) were formed. With 1–10 mg/l fluoride, arrays of denser needle-like nanocrystals (20–30 nm wide, >500 nm in length) were formed. We conclude that there is a minimal fluoride concentration (1 mg/l) that dramatically affects the morphology of calcium phosphate crystals grown on etched enamel in vitro. PMID:19321991

  2. Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

    SciTech Connect

    Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa; Hinata, Toru; Washio, Masakazu; Oshima, Akihiro; Tagawa, Seiichi; The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047

    2013-10-14

    Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  3. Illumination-dependent HF Etching of AlAs Sacrificial Layers for the Formation of ``Rolled Up'' Nanotubes from Strained InGaAs/GaAs Films

    NASA Astrophysics Data System (ADS)

    Costescu, Ruxandra M.

    2011-10-01

    "Rolled-up" nanostructures formed from lattice mismatched III-V heterojunction films by taking advantage of a strain-induced self-rolling mechanism represent a useful type of building blocks for nanotechnology, with possible applications in high-speed microelectronic and optoelectronic devices. This work investigated the effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up MBE grown InGaAs/GaAs bilayers. Based on this "etch suppression effect" (ESE), we propose an illumination-assisted technique that offers an advantage over other methods of rolling up nano-objects on a substrate from inherently strained films because it allows control over the positioning of rolled-up micro- and nanotubes independently from lithographic methods. For thicknesses of AlAs below 10 nm, we found two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The "etch suppression" area is well defined by the illumination spot, which can be used to realize well-controlled heterogeneously etched regions on the same sample.

  4. Deep wet etching of borosilicate glass and fused silica with dehydrated AZ4330 and a Cr/Au mask

    NASA Astrophysics Data System (ADS)

    Jin, Joo-Young; Yoo, Sunghyun; Bae, Jae-Sung; Kim, Yong-Kweon

    2014-01-01

    This research highlights a superior glass-wet-etch technique which enables a glass wafer to be etched for more than 20 h in 49 wt% hydrofluoric acid (HF) only with Cr/Au film and a common positive photoresist, AZ4330. We demonstrated that pits on the wet-etched glass wafer were generated not only due to HF diffusion through the Cr/Au film but also due to pinholes on the Cr/Au films created by the diffusion of the Cr/Au etchant through a photoresist etching-mask during the Cr/Au wet etching process. These two types of diffusion, HF diffusion and Cr/Au etchant diffusion, were eliminated by the thermal curing of a photoresist (PR), AZ4330, before the Cr/Au wet etching process. The curing process allowed the PR to dehydrate, increased the hydrophobicity, and prevented the diffusion of the hydrophilic HF and Cr/Au etchant. Optimization of the curing process was performed, showing that curing at 130 C for 20 min was the proper condition. With the optimized process, a 525 m thick borosilicate glass wafer was penetrated with 49%wt HF. A fused silica wafer 525 m thick was also wet-etched and penetrated with 49 wt% HF at 10 h. Moreover, no pits were found in wet etching of the fused silica for 20 h in 49 wt% HF. These findings demonstrate that the proposed technique allows the wet etching of a glass wafer for more than 20 h in 49%wt HF, the best result thus far. We fabricated a glass substrate with a 217.0 m deep cavity and a penetrating through-via using the proposed technique, proving the feasibility of the product as an optical component with a surface roughness of 45.5 in the cavity.

  5. Time-varying wetting behavior on copper wafer treated by wet-etching

    NASA Astrophysics Data System (ADS)

    Tu, Sheng-Hung; Wu, Chuan-Chang; Wu, Hsing-Chen; Cheng, Shao-Liang; Sheng, Yu-Jane; Tsao, Heng-Kwong

    2015-06-01

    The wet cleaning process in semiconductor fabrication often involves the immersion of the copper wafer into etching solutions and thereby its surface properties are significantly altered. The wetting behavior of a copper film deposited on silicon wafer is investigated after a short dip in various etching solutions. The etchants include glacial acetic acid and dilute solutions of nitric acid, hydrofluoric acid, and tetramethylammonium hydroxide. It was found that in most cases a thin oxide layer still remains on the surface of as-received Cu wafers when they are subject to etching treatments. However, a pure Cu wafer can be obtained by the glacial acetic acid treatment and its water contact angle (CA) is about 45. As the pure Cu wafer is placed in the ambient condition, the oxide thickness grows rapidly to the range of 10-20 within 3 h and the CA on the hydrophilic surface also rises. In the vacuum, it is surprising to find that the CA and surface roughness of the pure Cu wafer can grow significantly. These interesting results may be attributed to the rearrangement of surface Cu atoms to reduce the surface free energy.

  6. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    NASA Astrophysics Data System (ADS)

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturers instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1?W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49?mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (? = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher -TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in -TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher -TBS when compared to the suggested manufacturers technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  7. Optical fibre nanotips fabricated by a dynamic chemical etching for sensing applications

    NASA Astrophysics Data System (ADS)

    Barucci, A.; Cosi, F.; Giannetti, A.; Pelli, S.; Griffini, D.; Insinna, M.; Salvadori, S.; Tiribilli, B.; Righini, G. C.

    2015-02-01

    Nanoprobe tips are key components in many applications such as scanning probe microscopes, nanoscale imaging, nanofabrication and sensing. This paper describes a dynamic chemical etching method for the fabrication of optical nanoprobes. The tips are produced by mechanically rotating and dipping a silica optical fibre in a chemical etching solution (aqueous hydrofluoric acid) covered with a protection layer. Using different dynamic regimes of the mechanical movements during the chemical etching process, it is possible to vary the cone angle, the shape, and the roughness of the nanoprobes. It is found that the tip profiles are determined by the nonlinear dynamic evolution of the meniscus of the etchant near the fibre. Computational fluid dynamic simulations have been performed, showing that different flow regimes correspond to different shear forces acting on the forming nanotip, in agreement with experimental results. With this method, a high yield of reproducible nanotips can be obtained, thus overcoming the drawbacks of conventional etching techniques. Typical tip features are short taper length (200 ?m), large cone angle (up to 40), and small probe tip dimension (less than 30 nm).

  8. Micromorphology of ceramic etching pattern for two CAD-CAM and one conventional feldspathic porcelain and need for post-etching cleaning.

    PubMed

    Onisor, Ioana; Rocca, Giovanni Tommaso; Krejci, Ivo

    2014-01-01

    The aim of this in vitro study was to observe the effect of hydrofluoric acid (HF) on the surface of two glass ceramics for Cerec and to compare it with the effect on a conventional glass ceramic. Discs were cut from a feldspathic ceramic block (VitaMKII) and from a leucite reinforced glass ceramic (IPS EMPRESS CAD) for Cerec. 5% and 9% HF concentrations were used during 1 min and 2 min each. Afterwards samples were thoroughly water rinsed for 30 s. Half of the 9% HF 1 min samples were subsequently submitted to a complex post-etching cleaning. All samples were observed under a scanning electron microscope (SEM). The conventional feldspathic ceramic samples were built up on a refractory die and a platinum foil. They were treated with 9% HF for 2 min and water rinsed for 30 s. Half of the samples were submitted to the same post-etching cleaning protocol. All samples were examined under SEM and EDX. The Cerec ceramic samples and the platinum foil ones were clean and free of any precipitate after 30 s of water rinsing. Acid concentration, times of application and the postetching cleaning treatment did not influence the cleanliness of the samples. A thick layer of deposit was observed only on the refractory die samples. This was only diminished after the post-etching treatment. The EDX analysis detected the presence of fluoride (F) only on the refractory die samples. PMID:24757699

  9. Surface Topographical Changes of a Failing Acid-Etched Long-Term in Function Retrieved Dental Implant.

    PubMed

    Monje, Alberto; Gonzlez-Garca, Ral; Fernndez-Caldern, Mara Coronada; Hierro-Oliva, Margarita; Gonzlez-Martn, Mara Luisa; Del Amo, Fernando Suarez-Lopez; Galindo-Moreno, Pablo; Wang, Hom-Lay; Monje, Florencio

    2016-02-01

    The aim of the present study was to report the main topographical and chemical changes of a failing 18-year in function retrieved acid-etching implant in the micro- and nanoscales. A partially edentulous 45 year old rehabilitated with a dental implant at 18 years of age exhibited mobility. After careful examination, a 3.25 13-mm press-fit dental implant was retrieved. Scanning electron microscope (SEM) analysis was carried out to study topographical changes of the retrieved implant compared with an unused implant with similar topographical characteristics. Moreover, X-ray photoelectron spectroscopy (XPS) analysis was used to study the surface composition of the retrieved failing implant. Clear changes related to the dual dioxide layer are present as visible in ?500 magnification. In addition, it was found that, for the retrieved implant, the surface composition consisted mainly of Ti2p, O1s, C1s, and Al2p. Also, a meaningful decrease of N and C was noticed, whereas the peaks of Ti2p, Al2p, and O1s increased when analyzing deeper (up to 2000s) in the sample. It was shown that the superficial surface of a retrieved press-fit dual acid-etched implant 18 years after placement is impaired. However, the causes and consequences for these changes cannot be determined. PMID:25642739

  10. Effect of ceramic etching protocols on resin bond strength to a feldspar ceramic.

    PubMed

    Bottino, M A; Snellaert, A; Bergoli, C D; Özcan, M; Bottino, M C; Valandro, L F

    2015-01-01

    This study sought to evaluate the resin microtensile bond strength (MTBS) stability of a leucite-reinforced ceramic after different ceramic etching protocols. The microtensile test had 40 ceramic blocks (5×5×6 mm) assigned to five groups (n=8), in accordance with the following surface etching protocols: NE nonetched (control); 9HF: hydrofluoric (HF) acid etching (9%HF)+wash/dry; 4HF: 4%HF+wash/dry; 5HF: 5%HF+wash/dry; and 5HF+N: 5%HF+neutralizer+wash/dry+ultrasonic-cleaning. Etched ceramic surfaces were treated with a silane agent. Next, resin cement blocks were built on the prepared ceramic surface and stored for 24 hours in distilled water at 37°C. The specimens were then sectioned to obtain microtensile beams (32/block), which were randomly assigned to the following conditions, nonaged (immediate test) and aged (water storage for 150 days plus 12,000 thermal cycles), before the microtensile test. Bond strength data were submitted to one-way analysis of variance and Tukey test (α=0.05). Additional ceramic samples were subjected to the different ceramic etching protocols and evaluated using a scanning electron microscope (n=2) and atomic force microscopy (n=2). Aging led to a statistically significant decrease in the MTBS for all groups, except the untreated one (NE). Among the groups submitted to the same aging conditions, the untreated (NE) revealed inferior MTBS values compared to the 9HF and 4HF groups. The 5HF and 5HF+N groups had intermediate mean values, being statistically similar to the higher values presented by the 9HF and 4HF groups and to the lower value associated with the NE group. The neutralization procedure did not enhance the ceramic/resin cement bond strength. HF acid etching is a crucial step in resin/ceramic bonding. PMID:25535782

  11. Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment

    NASA Astrophysics Data System (ADS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Lee, Ching-Sung; Liu, Han-Yin; Tsai, Chih-Ming; Ho, Chiu-Sheng

    2013-07-01

    This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (LG) can be achieved by using nitric acid (HNO3) PME treatment owing to the high etching selectivity of HNO3 of Ni against the Au and GaN layer. Influences on LG, etched gate profiles and device characteristics with respect to different PME processing parameters by HNO3 treatment are systematically investigated. Optimum device performance is obtained as LG was reduced to 0.5 µm by using a 1 µm long gate mask by immersing the device into a 45% diluted HNO3 solution for 35 s. Improved device performances, including maximum drain-source current density (IDS, max: 657.6 mA mm-1 → 898.5 mA mm-1), drain-source saturation current density at zero gate bias (IDSS0: 448.3 mA mm-1 → 653.4 mA mm-1), maximum extrinsic transconductance (gm, max: 158.3 mS mm-1 → 219.2 mS mm-1), unity-gain cut-off frequency (fT: 12.35 GHz → 22.05 GHz), maximum oscillation frequency (fmax: 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3% → 34.5%) compared to the untreated reference device, have been successfully achieved.

  12. Surface/interface morphology and bond strength to glass ceramic etched for different periods.

    PubMed

    Naves, Lucas Z; Soares, Carlos J; Moraes, Rafael R; Gonalves, Luciano S; Sinhoreti, Mrio Alexandre C; Correr-Sobrinho, Loureno

    2010-01-01

    This study evaluated the influence of etching periods on the surface/interface morphology and bond strength to glass ceramic with or without application of an unfilled resin after silane. Ceramic discs were divided into 12 groups, defined by etching time with 10% hydrofluoric acid: G1/G7--etching for 10 seconds, G2/G8--20 seconds; G3/G9--40 seconds; G4/G10--60 seconds; G5/G11--120 seconds and G6/G12--60 + 60 seconds. All the groups were silanated after etching and G7 - G12 received a layer of unfilled resin after silane. Microshear testing using resin cement was performed, with 12 resin cylinders tested per group. The data was submitted to two-way ANOVA and the Student-Newman-Keuls' test (p<0.05). Evaluation of the etching pattern and bonding interfaces was conducted by SEM. The bond strength means (MPa) were: 19.4 +/- 3.5, 22.3 +/- 5.1, 22.2 +/- 3.2, 17.8 +/- 2.1, 15.3 +/- 3.0 and 14.3 +/- 1.8 for G1-G6 and 17.4 +/- 4.8, 21.3 +/- 2.1, 21.1 +/- 2.3, 24.7 +/- 5.8, 20.4 +/- 2.2 and 18.5 +/- 4.6 for G7-G12. Poor etching was detected after 10 seconds of conditioning; whereas deep channels were extensively observed on surfaces etched for 120 and 60 + 60 seconds. Unfilled voids underlying the ceramic-cement interface were detected when only silane was applied. Full completion of the irregularities on G11 was detected using unfilled resin. When only silane was applied, the 60-second group and those etched for longer periods showed lower bond strengths. When both silane and unfilled resin were applied, all etching periods generally showed similar values. In conclusion, the etching period influenced the surface/interface topography and bond strength to ceramic. The application of unfilled resin was able to infiltrate all unfilled voids beneath the ceramic-cement interface, except on re-etched surfaces. PMID:20672726

  13. In vitro analysis of femtosecond laser as an alternative to acid etching for achieving suitable bond strength of brackets to human enamel.

    PubMed

    Lorenzo, M C; Portillo, M; Moreno, P; Montero, J; Castillo-Oyage, R; Garca, A; Albaladejo, A

    2014-05-01

    This study aims to evaluate the effect of laser irradiation and orthophosphoric acid etching on the shear bond strength (SBS) of orthodontic brackets to enamel. Three groups (n = 20) of extracted premolar teeth were randomly established depending on the laser treatment performed on the buccal surfaces: (1) no laser (control); (2) Er:YAG laser (2,940 nm, 0.8 W, 100 ?s/pulse, 10 Hz) and; (3) Ti:Sapphire laser (795 nm, 1 W, 120 fs/pulse, 1 kHz). Each group was divided into two subgroups according to whether 37%-orthophosphoric acid etching was made after laser irradiation or not. Brackets were randomly luted with Transbond(TM) XT adhesive resin. After 72 h, a SBS test was developed in a universal testing machine (crosshead speed, 0.5 mm/min). Representative specimens from each experimental subgroup were examined by means of scanning electron microscopy. Cement residuals remaining on the premolar surfaces were assessed using the adhesive remnant index. ANOVA, post-hoc tests for intergroup comparisons, chi-square test and linear regression were run for data analyses (? = 0.05). After acid etching, SBS values did not differ regardless the laser treatment. When phosphoric acid was not applied, the SBS values of the femtosecond laser group were significantly higher than for the other groups. Femtosecond laser without acid seems to be the most suitable method to improve bond strengths at the bracket/enamel interface, thus avoiding the disadvantages inherent to acid etching. PMID:23483297

  14. UV-induced graft polymerization of acrylic acid in the sub-micronchannels of oxidized PET track-etched membrane

    NASA Astrophysics Data System (ADS)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Taltenov, Abzal A.

    2015-12-01

    In this article, we report on functionalization of track-etched membrane based on poly(ethylene terephthalate) (PET TeMs) oxidized by advanced oxidation systems and by grafting of acrylic acid using photochemical initiation technique for the purpose of increasing functionality thus expanding its practical application. Among advanced oxidation processes (H2O2/UV) system had been chosen to introduce maximum concentration of carboxylic acid groups. Benzophenone (BP) photo-initiator was first immobilized on the surfaces of cylindrical pores which were later filled with aq. acrylic acid solution. UV-irradiation from both sides of PET TeMs has led to the formation of grafted poly(acrylic acid) (PAA) chains inside the membrane sub-micronchannels. Effect of oxygen-rich surface of PET TeMs on BP adsorption and subsequent process of photo-induced graft polymerization of acrylic acid (AA) were studied by ESR. The surface of oxidized and AA grafted PET TeMs was characterized by UV-vis, ATR-FTIR, XPS spectroscopies and by SEM.

  15. Unintentional F doping of SrTiO3(001) etched in HF acid-structure and electronic properties

    SciTech Connect

    Chambers, Scott A.; Droubay, Timothy C.; Capan, Cigdem; Sun, Guangyuan

    2012-02-01

    We show that the HF acid etch commonly used to prepare SrTiO3(001) for heteroepitaxial growth of complex oxides results in a non-negligible level of F doping within the terminal surface layer of TiO2. Using a combination of x-ray photoelectron spectroscopy and scanned angle x-ray photoelectron diffraction, we determine that on average ~ 13% of the O anions in the surface layer are replaced by F, but that F does not occupy O sites in deeper layers. Despite this perturbation to the surface, the Fermi level remains unpinned, and the surface-state density, which determines the amount of band bending, is driven by factors other than F doping. The presence of F at the STO surface is expected to result in lower electron mobilities at complex oxide heterojunctions involving STO substrates because of impurity scattering. Unintentional F doping can be substantially reduced by replacing the HF-etch step with a boil in deionized water, which in conjunction with an oxygen tube furnace anneal, leaves the surface flat and TiO2 terminated.

  16. Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

    NASA Astrophysics Data System (ADS)

    Köllensperger, P. A.; Karl, W. J.; Ahmad, M. M.; Pike, W. T.; Green, M.

    2012-06-01

    The chemical and physical properties of platinum (Pt) make it a useful material for microelectromechanical systems and microfluidic applications such as lab-on-a-chip devices. Platinum thin-films are frequently employed in applications where electrodes with high chemical stability, low electrical resistance or a high melting point are needed. Due to its chemical inertness it is however also one of the most difficult metals to pattern. The gold standard for patterning is chlorine RIE etching, a capital-intensive process not available in all labs. Here we present simple fabrication protocols for wet etching Pt thin-films in hot Aqua Regia based on sputtered Ti/Pt/Cr and Cr/Pt/Cr metal multilayers. Chromium (Cr) or titanium (Ti) is used as an adhesion layer for the Pt. Cr is used as a hard masking layer during the Pt etch as it can be easily and accurately patterned with photoresist and withstands the Aqua Regia. The Cr pattern is transferred into the Pt and the Cr mask later removed. Only standard chemicals and cleanroom equipment/tools are required. Prior to the Aqua Regia etch any surface passivation on the Pt is needs to be removed. This is usually achieved by a quick dip in dilute hydrofluoric acid (HF). HF is usually also used for wet-etching the Ti adhesion layer. We avoid the use of HF for both steps by replacing the HF-dip with an argon (Ar) plasma treatment and etching the Ti layer with a hydrogen peroxide (H2O2) based etchant.

  17. Changes in the surface of bone and acid-etched and sandblasted implants following implantation and removal

    PubMed Central

    Eroglu, Cennet Neslihan; Ertugrul, Abdullah Seckin; Eskitascioglu, Murat; Eskitascioglu, Gurcan

    2016-01-01

    Objective: The aim of this study was to determine whether there are any changes in the surface of bone or implant structures following the removal of a screwed dental implant. Materials and Methods: For this, six individual samples of acid-etched and sandblasted implants from three different manufacturers’ implant systems were used. They were screwed in a D1 bovine bone, and they were removed after primary stabilization. The bone and implant surfaces are evaluated with scanning electron microscope. Results: Through examination of the surfaces of the bone prior to implantation and of the used and unused implant surfaces, it was found that inhomogeneity in the implant surface can cause microcracking in the bone. Conclusions: This is attributed to the stress induced during the implantation of self-tapping implants and suggests that a tap drill may be required in some instances to protect the implant surface. PMID:27011744

  18. Assessing Double Acid-Etched Implants Submitted to Orthodontic Forces and Used as Prosthetic Anchorages in Partially Edentulous Patients

    PubMed Central

    de Cravero Marta, Rugani; Carlos, Ibaez Juan

    2008-01-01

    Abstract: The use of implants as anchorage for orthodontic forces seems to be a good alternative in partially edentulous patients needing orthodontic treatment. This study is aimed at assessing the performance and behavior of microtextured surface endosseous implants obtained by means of a double acid etching against orthodontic forces, as well as their adequacy to be used first as anchorage and later as fixtures for the definitive prosthesis. Materials and Methods: A total of 93 double acid-etched surface parallel wall implants (Osseotite Implants, Implant Innovations Inc., Palm Beach, Florida, USA) were inserted in 38 partially edentulous patients prior to orthodontic treatment This was carried out by following two-stage surgery protocols in the maxilla as well as in the mandible. After a healing period of six months for the maxilla and four months for the mandible, the implants were used as anchorage for sliding, compression and traction orthodontic forces between 100 to 200 g by means of Ni-TI springs. Bone level and Resonance Frequency Analysis (RFA) were measured before and after the introduction of the orthodontics forces. Results: After removal of the orthodontics appliances, all the implants remained stabile and served as support for prosthetic replacement of missing teeth. The bone level showed no variationeven when a positive difference 0.02 0.38mm was noticed. The RFA scored a significant difference (p? 0.03) between the initial Implant Stability Quotient (ISQ) values (66) and the final ones (68). Conclusions: These findings showed that Osseotite implants were able to support the orthodontic forces applied during this investigation, maintaining osseointegration without significant variation in bone level. Therefore, they can be used to support dental prosthesis once they have been used as orthodontic anchorage under the cited conditions. PMID:19088880

  19. Sensing structure based on surface plasmonic resonance in single mode optical fibers chemically etched

    NASA Astrophysics Data System (ADS)

    Coelho, L.; Almeida, J. M.; Santos, J. L.; Ferreira, R. A. S.; Andr, P. S.; Viegas, D.

    2013-05-01

    Many optical systems based on Surface Plasmon Resonance (SPR) have been developed for work as refractometers, chemical sensors or even for measure the thickness of metal and dielectric thin films. These kinds of systems are usually large, expensive and cannot be used for remote sensing. Optical fiber sensors based on SPR has been widely studied for the last 20 years with several configurations mostly using multimode optical fibers with large cores and plastic claddings. Sensors based on SPR present very high sensitivity to refractive index variations when compared to the traditional refractive index sensors. Here we propose a SPR sensor based in a single mode fiber. The fiber end is chemically etched by emersion in a 48% hydrofluoric acid solution, resulting a single mode fiber with the cladding removed in a small section. A resonance dip around 1580 nm was attained in good agreement with the simulation scenario that takes into account the real characteristics of the fiber.

  20. Apparatus For Etching Or Depositing A Desired Profile Onto A Surface

    DOEpatents

    Rushford, Michael C.; Britten, Jerald A.

    2004-05-25

    An apparatus and method for modifying the surface of an object by contacting said surface with a liquid processing solution using the liquid applicator geometry and Marangoni effect (surface tension gradient-driven flow) to define and confine the dimensions of the wetted zone on said object surface. In particular, the method and apparatus involve contouring or figuring the surface of an object using an etchant solution as the wetting fluid and using real-time metrology (e.g. interferometry) to control the placement and dwell time of this wetted zone locally on the surface of said object, thereby removing material from the surface of the object in a controlled manner. One demonstrated manifestation is in the deterministic optical figuring of thin glasses by wet chemical etching using a buffered hydrofluoric acid solution and Marangoni effect.

  1. Scalable shape-controlled fabrication of curved microstructures using a femtosecond laser wet-etching process.

    PubMed

    Bian, Hao; Yang, Qing; Chen, Feng; Liu, Hewei; Du, Guangqing; Deng, Zefang; Si, Jinhai; Yun, Feng; Hou, Xun

    2013-07-01

    Materials with curvilinear surface microstructures are highly desirable for micro-optical and biomedical devices. However, realization of such devices efficiently remains technically challenging. This paper demonstrates a facile and flexible method to fabricate curvilinear microstructures with controllable shapes and dimensions. The method composes of femtosecond laser exposures and chemical etching process with the hydrofluoric acid solutions. By fixed-point and step-in laser irradiations followed by the chemical treatments, concave microstructures with different profiles such as spherical, conical, bell-like and parabola were fabricated on silica glasses. The convex structures were replicated on polymers by the casting replication process. In this work, we used this technique to fabricate high-quality microlens arrays and high-aspect-ratio microwells which can be used in 3D cell culture. This approach offers several advantages such as high-efficient, scalable shape-controllable and easy manipulations. PMID:23623098

  2. Photopolymerization of phosphoric acid ester-based self-etch dental adhesives

    PubMed Central

    ZHANG, Ying; WANG, Yong

    2014-01-01

    The objective of the study was to gain more understanding on the photopolymerization mechanism and the role of individual monomers in the polymerization behavior of a PAE-based self-etch adhesive system with the presence of HAp and water. The photo-polymerization process of the model adhesive system (2MP / HEMA) was monitored by using real-time attenuated total reflectance Fourier transform infrared (ATR/FT-IR) technique. The effect of monomer ratio, HAp incorporation, and water content were investigated. The degree of conversion (DC) and the polymerization rate (PR) of the adhesives were determined to evaluate the polymerization efficacy. The results showed that the DC and PR increased consistently as the 2MP content increased from 30% to 70%, while they declined drastically as the 2MP content was further elevated to 100%. The incorporation of HAp considerably increased the DC and PR; however, the increase in water content was found to have negative influence on the photopolymerization. PMID:23370865

  3. Effects of N-methacryloyl-omega-amino acid primer pretreatment on the bond strength of the resin to acid-etched dentin.

    PubMed

    Suzuki, K; Nishiyama, N; Nemoto, K; Asakura, T; Nakai, H

    1997-11-01

    To ascertain the adhesion mechanism of resins to etched dentin treated with hydrophilic primers such as N-methacryloyl-omega-amino acids (NM omega A), the effect of the application of NM omega A primers on the bond strength of the resin and also the characteristics of the "hybrid layer" were investigated. Here, the concept of "hybrid layer" has been proposed previously by Nakabayashi et al. When the demineralized dentin was treated with the NM omega A solution, the bond strength increased remarkably, thus indicating the formation of a hybrid layer. It can be construed that NM omega A primers allowed for diffusion of the bonding agent to the dentinal collageous layer that was exposed by acid etching, and thereby the creation of a hybrid layer. To obtain an understanding of how NM omega A primers improved bond strength at the interface between the resin and dentinal collagen, the 13C-NMR spectra of NM alpha A were observed in the absence and presence of demineralized dentin. The 13C peak intensities of all of the carbons of the NM alpha A species were dramatically reduced in the presence of the dentin. Specifically, the reduction of the carbon peak intensity of carboxylic acid in the NM alpha A species was reduced by 30%. This indicated that the unionized carboxylic acid in the NM alpha A primer interacted with the dentinal collagen. Thus, the composite resin can be considered to adhere to the dentinal collagen through the unionized NM alpha A that interacts with the dentinal collagen. PMID:9358320

  4. Magnetic field sensing based on fiber loop ring-down spectroscopy and etched fiber interacting with magnetic fluid

    NASA Astrophysics Data System (ADS)

    Wang, Qi; Liu, Xu; Zhao, Yong; Lv, Riqing; Hu, Haifeng; Li, Jin

    2015-12-01

    A novel magnetic field sensing system based on fiber loop ring-down spectroscopy (FLRDS) and etched fiber interacting with magnetic fluid (MF) is proposed and demonstrated for the first time. The enhanced evanescent field effect in the sensing part was achieved by etching the fiber with hydrofluoric acid. The influence of diameters of etched fiber to the performance of the sensor was investigated and discussed. In the sensing system, the etched fiber surrounded by MF was used as the sensing head and on account of the tunable refractive index and absorption coefficient of MF, the transmission spectrum would change with the magnetic field strength. In this letter, the FLRDS sensing system was theoretically modeled and FLRDS technique was utilized to modulate the transmission spectrum. The sensitivity of magnetic field sensing was enhanced significantly. In the experiment, performances of the magnetic field sensing system were tested by applying different measured magnetic field. The final results indicated that a sensitivity of 12.56 G/?s was achieved.

  5. Chemical analysis of acidic silicon etch solutions II. Determination of HNO(3), HF, and H(2)SiF(6) by ion chromatography.

    PubMed

    Acker, Jrg; Henge, Antje

    2007-06-15

    The processing of silicon in microelectronics and photovoltaics involves the isotropic chemical etching using HF-HNO(3) mixtures to clean the surface from contaminations, to remove the saw damage, as well as to polish or to texture the wafer surface. Key element of an effective etch process control is the knowledge of the actual etch bath composition in order to maintain a certain etch rate by replenishment of the consumed acids. The present paper describes a methods for the total analysis of the etch bath constituents HF, HNO(3), and H(2)SiF(6) by ion chromatography. First step is the measurement of the total fluoride and nitrate content in the analyte. In a second step, H(2)SiF(6) is precipitated as K(2)SiF(6). After careful filtration of the precipitate, the fluoride concentration in the filtrate is measured and the content of free HF is calculated therefrom. The K(2)SiF(6) is dissolved again and the fluoride content measured and recalculated as H(2)SiF(6). The results obtained with the presented method are discussed with respect to the results from two other, previously published methods, based on a titration using methanolic cyclohexylamine solution as titrant and based on a method using a fluoride ion selective electrode (F-ISE). An evaluation with respect to the needs for an industrial application is given. PMID:19071795

  6. Novel and low reflective silicon surface fabricated by Ni-assisted electroless etching and coated with atomic layer deposited Al2O3 film

    NASA Astrophysics Data System (ADS)

    Yue, Zhihao; Shen, Honglie; Jiang, Ye; Wang, Wei; Jin, Jiale

    2014-03-01

    In this paper, nickel nanoparticles (Ni NPs) were deposited on planar silicon and pyramidal silicon wafers by the magnetron sputtering method, and then these Ni NP-covered samples were etched in a hydrofluoric acid, hydrogen peroxide, and deionized water mixed solution at room temperature to fabricate a low reflective silicon surface. An alumina (Al2O3) film was then deposited on the surface of the as-etched pyramidal sample by atomic layer deposition to further reduce the reflectance. The morphologies and compositions of these samples were studied by using a field emission scanning electron microscope attached to an energy-dispersive X-ray spectrometer. The surface reflectance measurements were carried out with a UV-Vis-NIR spectrophotometer in a wavelength range of 200-1100 nm. The SEM images show that the as-etched planar and pyramidal silicon samples were covered with many rhombic nanostructures and that some nanostructures on the planar silicon surface were ready to exhibit a flower-like burst. The reflectances of the as-etched planar and pyramidal silicon samples were 5.22 % and 3.21 % in the wavelength range of 400-800 nm, respectively. After being coated with a 75-nm-thick Al2O3 film, the etched pyramidal silicon sample showed an even lower reflectance of 2.37 % from 400 nm to 800 nm.

  7. Comparison of Shear Bond Strength of Orthodontic Brackets Bonded to Enamel Prepared By Er:YAG Laser and Conventional Acid-Etching

    PubMed Central

    Hosseini, M.H.; Namvar, F.; Chalipa, J.; Saber, K.; Chiniforush, N.; Sarmadi, S.; Mirhashemi, A.H.

    2012-01-01

    Introduction: The purpose of this study was to compare shear bond strength (SBS) of orthodontic brackets bonded to enamel prepared by Er:YAG laser with two different powers and conventional acid-etching. Materials and Methods: Forty-five human premolars extracted for orthodontic purposes were randomly assigned to three groups based on conditioning method: Group 1- conventional etching with 37% phosphoric acid; Group 2- irradiation with Er:YAG laser at 1 W; and Group 3- irradiation with Er:YAG laser at 1.5 W. Metal brackets were bonded on prepared enamel using a light-cured composite. All groups were subjected to thermocycling process. Then, the specimens mounted in auto-cure acryle and shear bond strength were measured using a universal testing machine with a crosshead speed of 0.5 mm per second. After debonding, the amount of resin remaining on the teeth was determined using the adhesive remnant index (ARI) scored 1 to 5. One-way analysis of variance was used to compare shear bond strengths and the Kruskal-Wallis test was performed to evaluate differences in the ARI for different etching types. Results: The mean and standard deviation of conventional acid-etch group, 1W laser group and 1.5W laser group was 3.82 ± 1.16, 6.97 ± 3.64 and 6.93 ± 4.87, respectively. Conclusion: The mean SBS obtained with an Er:YAG laser operated at 1W or 1.5W is approximately similar to that of conventional etching. However, the high variability of values in bond strength of irradiated enamel should be considered to find the appropriate parameters for applying Er:YAG laser as a favorable alternative for surface conditioning. PMID:22924098

  8. Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver

    NASA Astrophysics Data System (ADS)

    Chen, Chia-Yun; Wong, Ching-Ping

    2014-12-01

    Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag+-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag+ and NO3- ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation.Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag+-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag+ and NO3- ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05949b

  9. From acid etching treatments to tribocorrosive properties of dental implants: do some experimental results on surface treatments have an influence on the tribocorrosion behaviour of dental implants?

    NASA Astrophysics Data System (ADS)

    Geringer, Jean; Demanget, Nicolas; Pellier, Julie

    2013-10-01

    Surface treatments of dental implants aim at promoting osseointegration, i.e. the anchorage of the metallic part. Titanium-, grade II-V, based material is used as a bulk material for dental implants. For promoting the anchorage of this metallic biomaterial in human jaw, some strategies have been applied for improving the surface state, i.e. roughness, topography and coatings. A case study, experimental study, is described with the method of acid etching on titanium grade 4, CpTi. The main goal is to find the right proportion in a mixture of two acids in order to obtain the best surface state. Finally, a pure theoretical prediction is quite impossible and some experimental investigations are necessary to improve the surface state. The described acid etching is compared with some other acid etching treatments and some coatings available on dental implants. Thus, the discussion is focused on the tribocorrosion behaviour of titanium-based materials. The purpose of the coating is that the lifetime under tribocorrosion is limited. Moreover, the surgery related to the implantation has a huge impact on the stability of dental implants. Thus, the performance of dental implants depends on factors related to surgery (implantation) that are difficult to predict from the biomaterial characteristics. From the tribocorrosion point of view, i.e. during the mastication step, the titanium material is submitted to some deleterious factors that cause the performance of dental implants to decrease.

  10. Creation of superhydrophobic stainless steel surfaces by acid treatments and hydrophobic film deposition.

    PubMed

    Li, Lester; Breedveld, Victor; Hess, Dennis W

    2012-09-26

    In this work, we present a method to render stainless steel surfaces superhydrophobic while maintaining their corrosion resistance. Creation of surface roughness on 304 and 316 grade stainless steels was performed using a hydrofluoric acid bath. New insight into the etch process is developed through a detailed analysis of the chemical and physical changes that occur on the stainless steel surfaces. As a result of intergranular corrosion, along with metallic oxide and fluoride redeposition, surface roughness was generated on the nano- and microscales. Differences in alloy composition between 304 and 316 grades of stainless steel led to variations in etch rate and different levels of surface roughness for similar etch times. After fluorocarbon film deposition to lower the surface energy, etched samples of 304 and 316 stainless steel displayed maximum static water contact angles of 159.9 and 146.6°, respectively. However, etching in HF also caused both grades of stainless steel to be susceptible to corrosion. By passivating the HF-etched samples in a nitric acid bath, the corrosion resistant properties of stainless steels were recovered. When a three step process was used, consisting of etching, passivation and fluorocarbon deposition, 304 and 316 stainless steel samples exhibited maximum contact angles of 157.3 and 134.9°, respectively, while maintaining corrosion resistance. PMID:22913317

  11. Ultra-Trace Detection of Fluoride Ion and Hydrofluoric Acid

    SciTech Connect

    Timothy M. Swager

    2005-03-17

    Describes general synthetic strategies developed under this grant to control interchain electronic communications within conjugated polymers (CPs). Novel chemical architectures built on iptycenes, metallorotaxanes, and canopied pyrroles restrict the dimensionality of electronic structures responsible for excition and charge transport. Structure-property relationships emerging from studies of selected systems are discussed, focusing on their implications for the sensitivity of these materials as sensors.

  12. [Superficial structure of dental cement as shown by acid etching and scanning electron microscope].

    PubMed

    Nief, L; Lamendin, H; Marie, M P

    1977-01-01

    The superficial layer of the cement is made up of a mineralised structure in which are included organic fibres which would seem to serve as the intracemental anchorage of Sharpey's fibre. The appearance seen on sweep electron microscopy after acid demineralisation confirm those seen using the electron microscope by Selvig. These fibres included in the cement have a variable diameter ranging from a few microns and 45 microns on our pictures (10 microns according to Selvig). They consist of a numerous fibrils with a diameter of the order of 0.3 microns. In the cement these fibers are parallel to the surface of the tooth, this confirming Selvig's finding. Finally, our observations show that, in the superficial part of the cement, these fibres form a markedly flattened three-dimensional network. PMID:270801

  13. No Positive Effect of Acid Etching or Plasma Cleaning on Osseointegration of Titanium Implants in a Canine Femoral Condyle Press-Fit Model

    PubMed Central

    Saks, H; Jakobsen, T; Saks, M; Baas, J; Jakobsen, SS; Soballe, K

    2013-01-01

    Purpose: Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants. Methods: In a randomized, paired animal study, four porous coated Ti implants were inserted into the femurs of each of ten dogs. PC (Porous Coating; control)PC+PSHA (Plasma Sprayed Hydroxyapatite; positive control)PC+ET (Acid Etch)PC+ET+PLCN (Plasma Cleaning) After four weeks mechanical fixation was evaluated by push-out test and osseointegration by histomorphometry. Results: The PSHA-coated implants were better osseointegrated than the three other groups on outer surface implant porosity (p<0.05) while there was no statistical difference in deep surface implant porosity when compared with nontreated implant. Within the deep surface implant porosity, there was more newly formed bone in the control group compared to the ET and ET+PCLN groups (p<0.05). In all compared groups, there was no statistical difference in any biomechanical parameter. Conclusions: In terms of osseointegration on outer surface implant porosity PC+PSHA was superior to the other three groups. Neither the acid etching nor the plasma cleaning offered any advantage in terms of implant osseointegration. There was no statistical difference in any of the biomechanical parameters among all groups in the press-fit model at 4 weeks of evaluation time. PMID:23341850

  14. Surface Properties and Osteoblastic Cytocompatibility of Two Blasted and Acid-Etched Titanium Implant Systems with Distinct Microtopography

    PubMed Central

    Mesquita, Pedro; Gomes, Pedro de Sousa; Sampaio, Paula; Juodzbalys, Gintaras; Afonso, Amrico

    2012-01-01

    ABSTRACT Objectives The aim of this study is to compare two commercially available screw-type sandblasted and acid-etched (SLA) Ti implant systems from Eckermann Laboratorium S.L., with similar geometry and distinct microtopography, regarding surface properties and osteoblastic cytocompatibility. Material and Methods Implant I (referred as a conventional SLA system) and Implant II (a system patented as Eckcyte) were characterized for macro and microtopograpphy, surface roughness and chemical composition. For the cytocompatibility studies, human bone marrow osteoblastic cells were seeded over the implants' surface, and the cell response was assessed for cell adhesion and proliferation, alkaline phosphatase (ALP) activity and matrix mineralization. Results Implant I presented a rough surface with irregularly shaped and sized cavities among flatter-appearing areas, whereas Implant II exhibited a homogeneous rough microporous surface. Compared to Implant I, Implant II presented higher Ra values (0.8 [SD 0.008] ?m and 1.21 [SD 0.15] ?m, respectively, P < 0.05) and also increased values of Rz, Rt and Rsm, a more negative value of Rsk, and similar RKu values. XPS showed the expected presence of Ti, O, C and N; Al, Si, F, P and Ca were detected in low concentrations. Implant II exhibited significantly lower Al levels. Both implants supported the adhesion, proliferation and differentiation of osteoblastic cells. Implant II showed a thicker fibrilar cell layer and an earlier onset and more abundant matrix mineralization. Conclusions The homogeneous rough and microporous surface of Implant II is most probably a main contributor for its improved cell response. PMID:24422006

  15. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method.

    PubMed

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-01-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10?m with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films. PMID:25349554

  16. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    NASA Astrophysics Data System (ADS)

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-10-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 ?m with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films.

  17. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    PubMed Central

    2014-01-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10?m with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films. PMID:25349554

  18. Nanoscopic tip sensors fabricated by gas phase etching of optical glass fibers

    NASA Astrophysics Data System (ADS)

    Bierlich, Jrg; Kobelke, Jens; Brand, David; Kirsch, Konstantin; Dellith, Jan; Bartelt, Hartmut

    2012-12-01

    Silica-based fiber tips are used in a variety of spectroscopic, micro- or nano-scopic optical sensor applications and photonic micro-devices. The miniaturization of optical sensor systems and the technical implementation using optical fibers can provide new sensor designs with improved properties and functionality for new applications. The selective-etching of specifically doped silica fibers is a promising method in order to form complex photonic micro structures at the end or within fibers such as tips and cavities in various shapes useful for the all-fiber sensor and imaging applications. In the present study, we investigated the preparation of geometrically predefined, nanoscaled fiber tips by taking advantage of the dopant concentration profiles of highly doped step-index fibers. For this purpose, a gas phase etching process using hydrofluoric acid (HF) vapor was applied. The shaping of the fiber tips was based on very different etching rates as a result of the doping characteristics of specific optical fibers. Technological studies on the influence of the etching gas atmosphere on the temporal tip shaping and the final geometry were performed using undoped and doped silica fibers. The influence of the doping characteristics was investigated in phosphorus-, germanium-, fluorine- and boron-doped glass fibers. Narrow exposed as well as protected internal fiber tips in various shapes and tip radiuses down to less than 15 nm were achieved and characterized geometrically and topologically. For investigations into surface plasmon resonance effects, the fiber tips were coated with nanometer-sized silver layers by means of vapour deposition and finally subjected to an annealing treatment.

  19. Effects of Dextrose and Lipopolysaccharide on the Corrosion Behavior of a Ti-6Al-4V Alloy with a Smooth Surface or Treated with Double-Acid-Etching

    PubMed Central

    Faverani, Leonardo P.; Assunção, Wirley G.; de Carvalho, Paulo Sérgio P.; Yuan, Judy Chia-Chun; Sukotjo, Cortino; Mathew, Mathew T.; Barao, Valentim A.

    2014-01-01

    Diabetes and infections are associated with a high risk of implant failure. However, the effects of such conditions on the electrochemical stability of titanium materials remain unclear. This study evaluated the corrosion behavior of a Ti-6Al-4V alloy, with a smooth surface or conditioned by double-acid-etching, in simulated body fluid with different concentrations of dextrose and lipopolysaccharide. For the electrochemical assay, the open-circuit-potential, electrochemical impedance spectroscopy, and potentiodynamic test were used. The disc surfaces were characterized by scanning electron microscopy and atomic force microscopy. Their surface roughness and Vickers microhardness were also tested. The quantitative data were analyzed by Pearson's correlation and independent t-tests (α = 0.05). In the corrosion parameters, there was a strong lipopolysaccharide correlation with the Ipass (passivation current density), Cdl (double-layer capacitance), and Rp (polarization resistance) values (p<0.05) for the Ti-6Al-4V alloy with surface treatment by double-acid-etching. The combination of dextrose and lipopolysaccharide was correlated with the Icorr (corrosion current density) and Ipass (p<0.05). The acid-treated groups showed a significant increase in Cdl values and reduced Rp values (p<0.05, t-test). According to the topography, there was an increase in surface roughness (R2 = 0.726, p<0.0001 for the smooth surface; R2 = 0.405, p = 0.036 for the double-acid-etching-treated surface). The microhardness of the smooth Ti-6Al-4V alloy decreased (p<0.05) and that of the treated Ti-6Al-4V alloy increased (p<0.0001). Atomic force microscopy showed changes in the microstructure of the Ti-6Al-4V alloy by increasing the surface thickness mainly in the group associated with dextrose and lipopolysaccharide. The combination of dextrose and lipopolysaccharide affected the corrosion behavior of the Ti-6Al-4V alloy surface treated with double-acid-etching. However, no dose-response corrosion behavior could be observed. These results suggest a greater susceptibility to corrosion of titanium implants in diabetic patients with associated infections. PMID:24671257

  20. Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study

    NASA Astrophysics Data System (ADS)

    Amri, Chohdi; Ouertani, Rachid; Hamdi, Abderrahmen; Ezzaouia, Hatem

    2016-03-01

    In this paper, we report a comparative study between porous silicon (pSi) and porous silicon nanowires (pSiNWs). Acid Vapor Etching (AVE) treatment has been used to perform porous structure on flat Si and SiNWs array substrates respectively. SiNW structure is prepared by the widely used Silver catalyzed etching method. SEM and TEM images show that AVE treatment induces porous structure in the whole Si wafer and the SiNW sidewall. Comparatively to pSi, pSiNWs exhibit a low reflectivity in the whole spectral range which decreases with etching duration. However, the reflectivity of pSi changes with porous layer thickness. Both pSi and pSiNWs exhibit a significant PL peak situated at 2 eV. PL peaks are attributed to the quantum confinement effect in the silicon nanocrystallites (SiNCs). We discussed the significant enhancement in the peak intensities and a shift toward lower energy displayed in Raman spectra for both pSi and pSiNWs. We reported a correlative study of the AVE treatment effect on the minority carrier life time of flat silicon and SiNW arrays with the passivation effect of chemical induced silicon oxides highlighted by FTIR spectra.

  1. Biomechanical evaluation of the interfacial strength of a chemically modified sandblasted and acid-etched titanium surface.

    PubMed

    Ferguson, S J; Broggini, N; Wieland, M; de Wild, M; Rupp, F; Geis-Gerstorfer, J; Cochran, D L; Buser, D

    2006-08-01

    The functional capacity of osseointegrated dental implants to bear load is largely dependent on the quality of the interface between the bone and implant. Sandblasted and acid-etched (SLA) surfaces have been previously shown to enhance bone apposition. In this study, the SLA has been compared with a chemically modified SLA (modSLA) surface. The increased wettability of the modSLA surface in a protein solution was verified by dynamic contact angle analysis. Using a well-established animal model with a split-mouth experimental design, implant removal torque testing was performed to determine the biomechanical properties of the bone-implant interface. All implants had an identical cylindrical shape with a standard thread configuration. Removal torque testing was performed after 2, 4, and 8 weeks of bone healing (n = 9 animals per healing period, three implants per surface type per animal) to evaluate the interfacial shear strength of each surface type. Results showed that the modSLA surface was more effective in enhancing the interfacial shear strength of implants in comparison with the conventional SLA surface during early stages of bone healing. Removal torque values of the modSLA-surfaced implants were 8-21% higher than those of the SLA implants (p = 0.003). The mean removal torque values for the modSLA implants were 1.485 N m at 2 weeks, 1.709 N m at 4 weeks, and 1.345 N m at 8 weeks; and correspondingly, 1.231 N m, 1.585 N m, and 1.143 N m for the SLA implants. The bone-implant interfacial stiffness calculated from the torque-rotation curve was on average 9-14% higher for the modSLA implants when compared with the SLA implants (p = 0.038). It can be concluded that the modSLA surface achieves a better bone anchorage during early stages of bone healing than the SLA surface; chemical modification of the standard SLA surface likely enhances bone apposition and this has a beneficial effect on the interfacial shear strength. PMID:16637025

  2. 24% Indigenously Prepared Ethylene Diamine Tetra Acetic Acid Compared to Self-Etching Adhesives and their Effect on Shear Bond Strength of Composites in Primary Teeth: An In-vitro Study

    PubMed Central

    Nagar, Priya; Tandil, Yogesh L.; T.P., Chandru; Gupta, Anamika; Kalaria, Devendra; Kumar, Prafful

    2015-01-01

    Background: Over the years, it has been known that 34% phosphoric acid is the benchmark in etchants with the best shear bond strength shown with composites in primary teeth. However, with latest technological advancements and innovations, in order to reduce the number of steps and less damage to the tooth structure, non-rinse conditioner (NRC) & Single-Etch and various other etchants have been tried and tested. These etchants have been found to have shear bond strength comparable to phosphoric acid. In this study, indigenously prepared 24% ethylenediaminetetraacetic acid (EDTA) has been compared with established etchants, as to prove if their shear bond strength was closely related. As it is a well-known fact that EDTA could be less damaging to the enamel during etching and hence can be an alternative for etching of primary teeth. Materials and Methods: For the study 60 caries-free primary molars were used, they were sectioned in the middle, after making area for bonding; the marked area was then etched using different etchants for 30 s. Each of the teeth was then rinsed and bonded with composite resin and thermocycling was done. Shear bond strength testing was done on the composite using Universal Testing Machine. Results: Results of the study showed that phosphoric acid showed the highest bond strength, closely followed by Single Etch (Adper Prompt) and NRC, then by EDTA. Conclusions: About 24% EDTA can be another comparable replacement for phosphoric acid if used with a Single Etch Primer, like Prime and Bond NT on primary teeth. 34% phosphoric acid has the highest bond strength values with composite resin. Single etch followed by NRC has the second and third highest bond strength values, which are comparable to phosphoric acid. PMID:26464540

  3. Repair strength of etched vs silica-coated metal-ceramic and all-ceramic restorations.

    PubMed

    Frankenberger, R; Krmer, N; Sindel, J

    2000-01-01

    The purpose of this in vitro study was to examine shear bond strengths of composite resin to metal-exposed porcelain-fused-to-metal (PFM) and all-ceramic restorations after silica coating or etching with 5% hydrofluoric acid (HF). Specimens were fabricated for each of the following groups: two all-ceramic materials [a feldspathic porcelain (Vita Mark II) and a leucite-reinforced glass-ceramic (IPS Empress)], and one noble metal-ceramic (Orplid Keramik I alloy; Vita VMK 68 N felspathic veneer ceramic). These groups were repaired with resin composites after different pretreatment methods. In one metal-ceramic subgroup the surface exhibited a 50% metal and 50% ceramic exposure. In the silica-coating groups, the specimen surfaces were air abraded with silica acid-modified Al2O3 (CoJet Sand) and treated corresponding to the porcelain repair with resin composite. For control groups, the surfaces were etched with 5% HF for 60 seconds and treated in the same way as the silica-coated groups. After 24 hours of storage (distilled water, 37 degrees C) and an additional 24 hours of thermocycling (1150 x 5 degrees C/55 degrees C) the specimens were debonded using a shear bond strength test (n = 15). In all groups the silica coat repair achieved equal or significantly higher bond strengths than did the etching technique (p < 0.05, Mann-Whitney U test). In the metal-exposed group, the mean bond strength increased from 7.3 MPa to 16.3 MPa following the silica-coat repair. Results indicated that silica coating represents a suitable treatment for the intraoral repair of the materials tested in the present study. PMID:11203818

  4. Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics

    NASA Astrophysics Data System (ADS)

    Srivastava, Sanjay K.; Kumar, Dinesh; Schmitt, S. W.; Sood, K. N.; Christiansen, S. H.; Singh, P. K.

    2014-05-01

    Vertically aligned silicon nanowire (SiNW) arrays have been fabricated over a large area using a silver-assisted single-step electroless wet chemical etching (EWCE) method, which involves the etching of silicon wafers in aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. A comprehensive systematic investigation on the influence of different parameters, such as the etching time (up to 15 h), solution temperature (10-80?C), AgNO3 (5-200 mM) and HF (2-22 M) concentrations, and properties of the multi-crystalline silicon (mc-Si) wafers, is presented to establish a relationship of these parameters with the SiNW morphology. A linear dependence of the NW length on the etch time is obtained even at higher temperature (10-50?C). The activation energy for the formation of SiNWs on Si(100) has been found to be equal to 0.51 eV . It has been shown for the first time that the surface area of the Si wafer exposed to the etching solution is an important parameter in determining the etching kinetics in the single-step process. Our results establish that single-step EWCE offers a wide range of parameters by means of which high quality vertical SiNWs can be produced in a very simple and controlled manner. A mechanism for explaining the influence of various parameters on the evolution of the NW structure is discussed. Furthermore, the SiNW arrays have extremely low reflectance (as low as <3% for Si(100) NWs and <12% for mc-Si NWs) compared to 35% for the polished surface in the 350-1000 nm wavelength range. The remarkably low reflection surface of SiNW arrays has great potential for use as an effective light absorber material in novel photovoltaic architectures, and other optoelectronic and photonic devices.

  5. Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics.

    PubMed

    Srivastava, Sanjay K; Kumar, Dinesh; Schmitt, S W; Sood, K N; Christiansen, S H; Singh, P K

    2014-05-01

    Vertically aligned silicon nanowire (SiNW) arrays have been fabricated over a large area using a silver-assisted single-step electroless wet chemical etching (EWCE) method, which involves the etching of silicon wafers in aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. A comprehensive systematic investigation on the influence of different parameters, such as the etching time (up to 15 h), solution temperature (10-80?C), AgNO3 (5-200 mM) and HF (2-22 M) concentrations, and properties of the multi-crystalline silicon (mc-Si) wafers, is presented to establish a relationship of these parameters with the SiNW morphology. A linear dependence of the NW length on the etch time is obtained even at higher temperature (10-50?C). The activation energy for the formation of SiNWs on Si(100) has been found to be equal to ?0.51 eV . It has been shown for the first time that the surface area of the Si wafer exposed to the etching solution is an important parameter in determining the etching kinetics in the single-step process. Our results establish that single-step EWCE offers a wide range of parameters by means of which high quality vertical SiNWs can be produced in a very simple and controlled manner. A mechanism for explaining the influence of various parameters on the evolution of the NW structure is discussed. Furthermore, the SiNW arrays have extremely low reflectance (as low as <3% for Si(100) NWs and <12% for mc-Si NWs) compared to ?35% for the polished surface in the 350-1000 nm wavelength range. The remarkably low reflection surface of SiNW arrays has great potential for use as an effective light absorber material in novel photovoltaic architectures, and other optoelectronic and photonic devices. PMID:24717841

  6. A solvent extraction approach to recover acetic acid from mixed waste acids produced during semiconductor wafer process.

    PubMed

    Shin, Chang-Hoon; Kim, Ju-Yup; Kim, Jun-Young; Kim, Hyun-Sang; Lee, Hyang-Sook; Mohapatra, Debasish; Ahn, Jae-Woo; Ahn, Jong-Gwan; Bae, Wookeun

    2009-03-15

    Recovery of acetic acid (HAc) from the waste etching solution discharged from silicon wafer manufacturing process has been attempted by using solvent extraction process. For this purpose 2-ethylhexyl alcohol (EHA) was used as organic solvent. In the pre-treatment stage >99% silicon and hydrofluoric acid was removed from the solution by precipitation. The synthesized product, Na(2)SiF(6) having 98.2% purity was considered of commercial grade having good market value. The waste solution containing 279 g/L acetic acid, 513 g/L nitric acid, 0.9 g/L hydrofluoric acid and 0.030 g/L silicon was used for solvent extraction study. From the batch test results equilibrium conditions for HAc recovery were optimized and found to be 4 stages of extraction at an organic:aqueous (O:A) ratio of 3, 4 stages of scrubbing and 4 stages of stripping at an O:A ratio of 1. Deionized water (DW) was used as stripping agent to elute HAc from organic phase. In the whole batch process 96.3% acetic acid recovery was achieved. Continuous operations were successfully conducted for 100 h using a mixer-settler to examine the feasibility of the extraction system for its possible commercial application. Finally, a complete process flowsheet with material balance for the separation and recovery of HAc has been proposed. PMID:18639982

  7. Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant

    PubMed Central

    Hu, Ya; Peng, Kui-Qing; Liu, Lin; Qiao, Zhen; Huang, Xing; Wu, Xiao-Ling; Meng, Xiang-Min; Lee, Shuit-Tong

    2014-01-01

    Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods. PMID:24413157

  8. Influence of different power outputs of erbium, chromium:yttrium-scandium-gallium-garnet laser and acid etching on shear bond strengths of a dual-cure resin cement to enamel.

    PubMed

    Ba?aran, Emine Gnc; Ayna, Emrah; Ba?aran, Gven; Beydemir, Kksal

    2011-01-01

    The purpose of the study was to determine if the irradiation of enamel with laser of different output powers might be viable alternatives to acid etching for the bonding of resin luting agents. Seventy-seven maxillary central incisors, extracted for periodontal reasons, were used. The enamel was etched with an erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser operated at one of six power outputs (0.5 W, 0.75 W, 1 W, 1.5 W, 1.75 W and 2 W) or with 38% phosphoric acid. Seventy teeth were used for the bond strength experiments, and the remaining seven (one specimen for each group) were used for scanning electron microscopy (SEM) to determine the topography and morphology of the treated enamel surface. The acid-etched group yielded the highest mean of shear bond strength (13.5 2.8 MPa). The means of the shear bond strength for the teeth irradiated at 0.5 W, 0.75 W, 1 W, 1.5 W , 1.75 W and 2 W laser were 3.28 2.4 MPa, 5.44 3.4 MPa, 8.8 4.5 MPa, 10.2 4.0 MPa, 11.4 4.8 MPa and 11.9 4.3 MPa, respectively. Laser irradiation at 1.5 W, 1.75 W and 2 W produced a type III acid-etched pattern similar to that produced by acid etching. No significant enamel surface etching was obtained by 0.5 W or 0.75 W laser irradiation. Irradiation at 0.5 W and 0.75 W produced a type V acid-etched pattern. We concluded that the mean shear bond strength and enamel surface etching obtained with Er,Cr:YSGG laser (operated at 1.5 W and 1.75 W for 15 s) is comparable to that obtained with acid etching. PMID:20016923

  9. Morphology of resin-dentin interfaces after Er,Cr:YSGG laser and acid etching preparation and application of different bonding systems.

    PubMed

    Beer, Franziska; Buchmair, Alfred; Körpert, Wolfram; Marvastian, Leila; Wernisch, Johann; Moritz, Andreas

    2012-07-01

    The goal of this study was to show the modifications in the ultrastructure of the dentin surface morphology following different surface treatments. The stability of the adhesive compound with dentin after laser preparation compared with conventional preparation using different bonding agents was evaluated. An Er,Cr:YSGG laser and 36% phosphoric acid in combination with various bonding systems were used. A total of 100 caries-free human third molars were used in this study. Immediately after surgical removal teeth were cut using a band saw and 1-mm thick dentin slices were created starting at a distance of 4 mm from the cusp plane to ensure complete removal of the enamel. The discs were polished with silicon carbide paper into rectangular shapes to a size of 6 × 4 mm (±0,2 mm).The discs as well as the remaining teeth stumps were stored in 0.9% NaCl at room temperature. The specimens were divided into three main groups (group I laser group, group II etch group, group III laser and etch group) and each group was subdivided into three subgroups which were allocated to the different bonding systems (subgroup A Excite, subgroup B Scotchbond, subgroup C Syntac). Each disc and the corresponding tooth stump were treated in the same way. After preparation the bonding composite material was applied according to the manufacturers' guidelines in a hollow tube of 2 mm diameter to the disc as well as to the corresponding tooth stump. Shear bond strength testing and environmental scanning electron microscopy were used to assess the morphology and stability of the resin-dentin interface. The self-etching bonding system showed the highest and the most constant shear values in all three main groups, thus enabling etching with phosphoric acid after laser preparation to be avoided. Thus we conclude that laser preparation creates a surface texture that allows prediction of the quality of the restoration without the risk of negative influences during the following treatment steps. This can easily and repeatedly be achieved. PMID:21948398

  10. Acidizing: A well completion reference

    SciTech Connect

    1997-11-01

    Acidizing removes near-wellbore formation damage by dissolving or bypassing drilling mud, completion fluid or other restrictions. These treatments include matrix pump rate jobs, washes and chemical injection. Matrix stimulation techniques are performed without fracturing reservoir rock. Acid is used to remove drilling, completion, workover or production damage. Solvents and surfactants like crude, condensate, diesel or mutual solvents are used to change pore fluid or formation wettability characteristics. Washes remove scale and other dispersible or soluble material from formations, perforations and casing. The purpose of the above methods is to improve well productivity by removing or mitigating formation damage. Hydrofluoric (HF) acid dissolves clay and fine particles in sandstones. Hydrochloric (HCl) acid etches wormholes that bypass damage in carbonates. Products are subdivided into groups that have similar function and performance. Where applicable, groups have been subdivided to reflect significant differences in additive chemical nature to emphasize uniqueness in the product lines of each company. Products and additives are grouped in 28 categories: water-base completion fluids; water-base polymers; friction reducers; fluid loss; diverting agents; polymer plugs; acid inhibitors; acid retarders; emulsifiers; clay stabilizers; surfactants; non-emulsifiers; fines suspender; anti-sludge agent; foamers; scale inhibitors; iron (Fe) control; oxygen scavenger; mutual solvents; corrosion inhibitors; paraffin control; miscellaneous products; acid systems; retarded acid system; mud acid plus surfactants; mud acid plus alcohol; SGMA; and retarded HF.

  11. Effects of heat treating silane and different etching techniques on glass fiber post push-out bond strength.

    PubMed

    Samimi, P; Mortazavi, V; Salamat, F

    2014-01-01

    The aims of this study were to compare two pretreatment methods of a fiber post and to evaluate the effect of heat treatment to applied silane on the push-out bond strength for different levels of root. In this in vitro study, 40 glass fiber posts were divided into five groups (n=8) according to the kind of surface treatment applied. They were then inserted into extracted and endodontically treated human canines using a self-etch resin cement (Panavia F2.0, Kuraray, Japan). Group HF+S = hydrofluoric acid (HF) etching and silane (S) application; group HF+S+WP = HF etching and heat-treated silane application and warmed posts (WP); group H2O2+S = hydrogen peroxide etching and silane application; group H2O2+S+WP = hydrogen peroxide and heat-treated-silane application and warmed post; and group C, the control group, received no pretreatment. After completion of thermal cycling (1000 cycles, 5-55C), all specimens were cut horizontally to obtain three sections. Each section was subjected to a push-out test, and the test results were analyzed using two-way analysis of variance, post-hoc Tukey honestly significant difference test, and a paired sample t-test (?=0.05). It was found that bond strength was not statistically influenced by the kind of etching material used (p=0.224), but was significantly affected by heat treatment of applied silane (p<0.001). The interaction between these two factors was not statistically significant (p=0.142). Group HF+S+WP showed the highest bond strength (12.561.73 MPa) (p<0.05). Scanning electron microscopy revealed the effect of the different treatments on the surface characteristics of posts. In the four pretreated groups, the bond strength decreased significantly from the coronal to the apical root canal sections (p?0.05). The results of this study show that the use of heat-treated silane significantly enhances the push-out bond strength of the fiber posts to root. HF acid etching with heat-treated silane application led to the highest bond strength. PMID:24809541

  12. Process for etching mixed metal oxides

    DOEpatents

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  13. Process for etching mixed metal oxides

    DOEpatents

    Ashby, Carol I. H. (Edgewood, NM); Ginley, David S. (Evergreen, CO)

    1994-01-01

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  14. Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

    PubMed

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-04-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. PMID:26918658

  15. Dry etching of metallization

    SciTech Connect

    Bollinger, D.

    1983-11-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  16. Effective Light Absorptive Layer Using Mezo-Porous Silicon by Electrochemical Etching

    NASA Astrophysics Data System (ADS)

    Kwon, Jae‑Hong; Lee, Soo‑Hong; Ju, Byeong‑Kwon

    2006-04-01

    Porous silicon (PS), an excellent light diffuser, can be used as an antireflective layer that does not need to be coated with other antireflection coating (ARC) materials. PS layers were obtained by electrochemical etching (ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/deionized (DI) water solution (HF/EtOH/H2O). This technique selectively removes Si atoms from the sample surface, forming a PS layer with adjustable optical, electrical, and mechanical properties. A PS layer with optimal antireflection characteristics was obtained for a charge density (Q) of 5.2 C/cm2. The weighted reflectance was reduced from 24 to 4% in the wavelength range from 400 to 1000 nm. The weighted reflectance with optimized PS layers is much less than that with a commercial SiNX ARC on a potassium hydroxide (KOH) pretextured multicrystalline silicon (mc-Si) surface. Therefore, it can be successfully used as an alternative way for the preparation of a PS antireflective layer for a silicon solar cell.

  17. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu2+/bicinchoninic acid pair with improved sensitivity

    NASA Astrophysics Data System (ADS)

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2015-12-01

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml-1) and a wide working range (0.5 to 1000 ?g ml-1) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications.Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml-1) and a wide working range (0.5 to 1000 ?g ml-1) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07924a

  18. Effect of dehiscences to the bone response of implants with an Acid-etched surface: an experimental study in miniature pigs.

    PubMed

    Ruehe, Baerbel; Heberer, Susanne; Bayreuther, Katja; Nelson, Katja

    2011-01-01

    Spontaneous early exposure of submerged implants during the healing phase as a factor for early crestal bone loss around the implants is still being controversially discussed. The aim of this study was to examine the potential impact of dehiscences on the osseointegration process of acid-etched dental implants with a shortened healing period in the maxilla. Five animals received a total of 15 titanium implants 8 weeks postextraction. Eight of these implants were placed in the maxilla to osseointegrate within a shortened healing period of 3 months, whereas the remaining implants were inserted in the lower jaw and served as controls with a regular healing time. Polyfluorochrome sequential labeling with xylenol orange, calcein green, and alizarin complexone was performed 2, 5, and 8 weeks after implant placement. After 12 weeks of unloaded and submerged healing, the animals were killed and the implants removed en bloc. After the processing of the undecalcified PMMA-embedded samples, thin ground sections (40-60 µm) were made. The histomorphometric determination of the bone-to-implant contact (BIC) was calculated using light microscopy. The peri-implant bone apposition rate and the direction of bone growth were determined with the fluorescence microscope. For statistical evaluation, the Mann-Whitney U test, Wilcoxon signed ranks test, and Friedman test were chosen. During the healing period, nonartificial dehiscences were observed at 9 implants. The average BIC was 54.19% (14.51%-68.97%). There were significantly lower BIC rates detected for the cervical part of the implants compared with the middle part. An influence of dehiscences on the osseointegration could not be proven. There were no significant differences between the BIC values of the upper and lower jaw. During the observation period from the third to the eighth week after implantation, the average new bone formation rate was 2.32 µm/d (1.76-2.82 µm/d). During this period, the amount of new bone growth decreased insignificantly. Based on the sequence of the polyfluorochrome labeling, an implantopetal (53.03%) as well as an implantofugal bone growth (46.97%) have been observed. It could be assumed that the acid-etched implants offered a prerequisite to osseointegrate under a shortened healing period. The observed dehiscences seemed not to have compromised the rate of osseointegration. PMID:20557147

  19. Fractal etching of graphene.

    PubMed

    Geng, Dechao; Wu, Bin; Guo, Yunlong; Luo, Birong; Xue, Yunzhou; Chen, Jianyi; Yu, Gui; Liu, Yunqi

    2013-05-01

    An anisotropic etching mode is commonly known for perfect crystalline materials, generally leading to simple Euclidean geometric patterns. This principle has also proved to apply to the etching of the thinnest crystalline material, graphene, resulting in hexagonal holes with zigzag edge structures. Here we demonstrate for the first time that the graphene etching mode can deviate significantly from simple anisotropic etching. Using an as-grown graphene film on a liquid copper surface as a model system, we show that the etched graphene pattern can be modulated from a simple hexagonal pattern to complex fractal geometric patterns with sixfold symmetry by varying the Ar/H2 flow rate ratio. The etched fractal patterns are formed by the repeated construction of a basic identical motif, and the physical origin of the pattern formation is consistent with a diffusion-controlled process. The fractal etching mode of graphene presents an intriguing case for the fundamental study of material etching. PMID:23586921

  20. Assessment of Microleakage of Class V Composite Resin Restoration Following Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) Laser Conditioning and Acid Etching with Two Different Bonding Systems

    PubMed Central

    Arbabzadeh Zavareh, Farahnaz; Samimi, Pouran; Birang, Reza; Eskini, Massoumeh; Bouraima, Stephane Ayoub

    2013-01-01

    Introduction: The use of laser for cavity preparation or conditioning of dentin and enamelsurfaces as an alternative for dental tissue acid-etch have increased in recent years. Theaim of this in vitro study was to compare microleakage at enamel-composite and dentincompositeinterfaces following Erbium-Doped Yttrium Aluminum Garnet(Er:YAG) laserconditioning or acid-etching of enamel and dentin, hybridized with different bonding systems. Methods: Class V cavities were prepared on the lingual and buccal surfaces of 50 recentlyextracted intact human posterior teeth with occlusal margin in the enamel and gingival marginin the dentin. The cavities were randomly assigned to five groups: group1:conditioned withlaser (Energy=120mJ, Frequency=10Hz, Pulse duration=100?s for Enamel and Energy=80mJ,Frequency=10Hz, Pulse duration=100?s for Dentin) + Optibond FL, group2:conditioned withlaser + etching with 35% phosphoric acid + Optibond FL, group3:conditioned with laser+ Clearfil SE Bond, group 4 (control):acid etched with 35% phosphoric acid + OptibondFL, group 5 (control): Clearfil SE Bond. All cavities were restored using Point 4 compositeresin. All samples were stored in distilled water at 37c for 24 h, then were thermocycled for500 cycles and immersed in 50% silver nitrate solution for 24 h. The teeth were sectionedbucco-lingually to evaluate the dye penetration. Kruskal-Wallis & Mann-Whitney testswere used for statistical analysis. Results: In occlusal margins, the least microleakage showed in groups 2, 4 and 5. Themaximum microleakage was observed in group 3 (P=0.009). In gingival margins, the leastmicroleakage was recorded in group2, while the most microleakage was found in group5 (P=0.001). Differences between 5 study groups were statistically significant (P<0.05).The microleakage scores were higher at the gingival margins. Conclusion: The use of the Er:YAG laser for conditioning with different dentin adhesivesystems influenced the marginal sealing of composite resin restorations. PMID:25606305

  1. Photoassisted anodic etching of gallium nitride

    SciTech Connect

    Lu, H.; Wu, Z.; Bhat, I.

    1997-01-01

    The first study of photo-assisted anodic etching of unintentionally doped n-GaN at room temperature is reported here. The electrolyte used is a mixture of buffered aqueous solution of tartaric acid and ethylene glycol. The etching rate varies from {approximately}20 {angstrom}/min to as high as 1600 {angstrom}/min. A systematic study shows that (1) the etch rate, as well as the surface roughness, increases with the current density; (2) the etching rate is the highest when the pH of the electrolyte is {approximately}7; and (3) the etching is faster when there is more ethylene glycol in the electrolyte solution. Ga-N-based III-V nitrides are important candidates for applications in blue light emitters and lasers, high voltage and high temperature electronics.

  2. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study.

    PubMed

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1?mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3?mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5?mg/mL and 1.0?mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0?mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  3. Adult Stem Cells Properties in Terms of Commitment, Aging and Biological Safety of Grit-Blasted and Acid-Etched Ti Dental Implants Surfaces

    PubMed Central

    Gardin, Chiara; Ferroni, Letizia; Bressan, Eriberto; Calvo - Guirado, José L.; Degidi, Marco; Piattelli, Adriano; Zavan, Barbara

    2014-01-01

    Titanium (Ti) is one of the most widely used biomaterials for manufacturing dental implants. The implant surface properties strongly influence osseointegration. The aim of the present study was to in vitro investigate the characteristics of Ti dental implants in terms of mutagenicity, hemocompatibility, biocompatibility, osteoinductivity and biological safety. The Ames test was used to test the mutagenicity of the Ti dental implants, and the hemolysis assay for evaluating their hemocompatibility. Human adipose - derived stem cells (ADSCs) were then seeded onto these implants in order to evaluate their cytotoxicity. Gene expression analyzing with real-time PCR was carried out to investigate the osteoinductivity of the biomaterials. Finally, the genetic stability of the cells cultured onto dental implants was determined by karyotyping. Our results demonstrated that Ti dental implants are not mutagenic, do not cause hemolysis, and are biocompatible. The MTT assay revealed that ADSCs, seeded on Ti dental implants, proliferate up to 30 days in culture. Moreover, ADSCs loaded on Ti dental implants show a substantial expression of some osteoblast specific markers, such as COL1A1, OPN, ALPL, and RUNX2, as well as chromosomal stability after 30 days of culture in a medium without osteogenic factors. In conclusion, the grit-blasted and acid-etched treatment seems to favor the adhesion and proliferation of ADSCs and improve the osteoinductivity of Ti dental implant surfaces. PMID:25635249

  4. Early bone response to machined, sandblasting acid etching (SLA) and novel surface-functionalization (SLAffinity) titanium implants: characterization, biomechanical analysis and histological evaluation in pigs.

    PubMed

    Chiang, Hsi-Jen; Hsu, Heng-Jui; Peng, Pei-Wen; Wu, Ching-Zong; Ou, Keng-Liang; Cheng, Han-Yi; Walinski, Christopher J; Sugiatno, Erwan

    2016-02-01

    The purpose of the present study was to examine early tissue response and osseointegration in the animal model. The surface morphologies of SLAffinity were characterized using scanning electron microscopy and atomic force microscopy. The microstructures were examined by X-ray diffraction, and hardness was measured by nanoindentation. Moreover, the safety and toxicity properties were evaluated using computer-aided programs and cell cytotoxicity assays. In the animal model, implants were installed in the mandibular canine-premolar area of 12 miniature pigs. Each pig received three implants: machine, sandblasted, large grit, acid-etched, and SLAffinity-treated implants. The results showed that surface treatment did affect bone-to-implant contact (BIC) significantly. At 3 weeks, the SLAffinity-treated implants were found to present significantly higher BIC values than the untreated implants. The SLAffinity treatments enhanced osseointegration significantly, especially at early stages of bone tissue healing. As described above, the results of the present study demonstrate that the SLAffinity treatment is a reliable surface modification method. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 104A: 397-405, 2016. PMID:26418567

  5. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    PubMed Central

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  6. Effect of bulk microstructure of commercially pure titanium on surface characteristics and fatigue properties after surface modification by sand blasting and acid-etching.

    PubMed

    Medvedev, A E; Ng, H P; Lapovok, R; Estrin, Y; Lowe, T C; Anumalasetty, V N

    2016-04-01

    Surface modification techniques are widely used to enhance the biological response to the implant materials. These techniques generally create a roughened surface, effectively increasing the surface area thus promoting cell adhesion. However, a negative side effect is a higher susceptibility of a roughened surface to failure due to the presence of multiple stress concentrators. The purpose of the study reported here was to examine the effects of surface modification by sand blasting and acid-etching (SLA) on the microstructure and fatigue performance of coarse-grained and ultrafine-grained (UFG) commercially pure titanium. Finer grain sizes, produced by equal channel angular pressing, resulted in lower values of surface roughness in SLA-processed material. This effect was associated with greater resistance of the UFG structure to plastic deformation. The fatigue properties of UFG Ti were found to be superior to those of coarse-grained Ti and conventional Ti-6Al-4V, both before and after SLA-treatment. PMID:26703365

  7. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu(2+)/bicinchoninic acid pair with improved sensitivity.

    PubMed

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2015-12-23

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu(2+). The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu(2+)/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu(2+) and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml(-1)) and a wide working range (0.5 to 1000 ?g ml(-1)) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications. PMID:26669539

  8. Etch pits on caprolactam

    NASA Astrophysics Data System (ADS)

    van der Heijden, A. E. D. M.; Geertman, R. M.

    1992-09-01

    As an extension of the results on the morphology, we investigated the defect structure of solution-grown caprolactam crystals by means of slight etching in cyclohexane and subsequent microscopic observation of the resulting etch pits on the 200, 110, and faces. In case of the face (which is a cleavage plane), we confirmed that the etch pits are formed around dislocation lines by performing an "etch-and-match" experiment. Information is obtained on morphology and density of etch pits, the presence of grain boundaries, as well as qualitative information on the inclination of the dislocation lines.

  9. Alkaline etch system qualification

    SciTech Connect

    Goldammer, S.E.; Pemberton, S.E.; Tucker, D.R.

    1997-04-01

    Based on the data from this qualification activity, the Atotech etch system, even with minimum characterization, was capable of etching production printed circuit products as good as those from the Chemcut system. Further characterization of the Atotech system will improve its etching capability. In addition to the improved etch quality expected from further characterization, the Atotech etch system has additional features that help reduce waste and provide for better consistency in the etching process. The programmable logic controller and computer will allow operators to operate the system manually or from pre-established recipes. The evidence and capabilities of the Atotech system made it as good as or better than the Chemcut system for etching WR products. The Printed Wiring Board Engineering Department recommended that the Atotech system be released for production. In December 1995, the Atotech system was formerly qualified for production.

  10. Spectrometric analysis of process etching solutions of the photovoltaic industry--determination of HNO3, HF, and H2SiF6 using high-resolution continuum source absorption spectrometry of diatomic molecules and atoms.

    PubMed

    Bcker, Stefan; Acker, Jrg

    2012-05-30

    The surface of raw multicrystalline silicon wafers is treated with HF-HNO(3) mixtures in order to remove the saw damage and to obtain a well-like structured surface of low reflectivity, the so-called texture. The industrial production of solar cells requires a consistent level of texturization for tens of thousands of wafers. Therefore, knowing the actual composition of the etch bath is a key element in process control in order to maintain a certain etch rate through replenishment of the consumed acids. The present paper describes a novel approach to quantify nitric acid (HNO(3)), hydrofluoric acid (HF), and hexafluosilicic acid (H(2)SiF(6)) using a high-resolution continuum source graphite furnace absorption spectrometer. The concentrations of Si (via Si atom absorption at the wavelength 251.611 nm, m(0),(Si)=130 pg), of nitrate (via molecular absorption of NO at the wavelength 214.803 nm, [Formula: see text] ), and of total fluoride (via molecular absorption of AlF at the wavelength 227.46 nm, m(0,F)=13 pg) were measured against aqueous standard solutions. The concentrations of H(2)SiF(6) and HNO(3) are directly obtained from the measurements. The HF concentration is calculated from the difference between the total fluoride content, and the amount of fluoride bound as H(2)SiF(6). H(2)SiF(6) and HNO(3) can be determined with a relative uncertainty of less than 5% and recoveries of 97-103% and 96-105%, respectively. With regards to HF, acceptable results in terms of recovery and uncertainty are obtained for HF concentrations that are typical for the photovoltaic industry. The presented procedure has the unique advantage that the concentration of both, acids and metal impurities in etch solutions, can be routinely determined by a single analytical instrument. PMID:22608457

  11. Metal etching with reactive gas cluster ion beams using pickup cell

    SciTech Connect

    Toyoda, Noriaki; Yamada, Isao

    2012-11-06

    Mixed gas cluster ion beams were formed using pickup cell for metal etching. O{sub 2} neutral clusters pick up acetic acid and formed mixed cluster beam. By using O{sub 2}-GCIB with acetic acid, enhancement of Cu etching was observed. Because of dense energy deposition by GCIB, etching of Cu proceeds by CuO formation, enhancement of chemical reaction with acetic acid and desorption of etching products. Surface roughening was not observed on poly crystalline Cu because of the small dependence of etching rate on crystal orientation. Halogen free and low-temperature metal etching with GCIB using pickup cell is possible.

  12. Sputtered gold mask for deep chemical etching of silicon

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.; Olive, R. S.

    1975-01-01

    Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

  13. Five-year retrospective radiographic follow-up study of dental implants with sandblasting with large grit, and acid etching-treated surfaces

    PubMed Central

    2015-01-01

    Objectives The purpose of this study is to evaluate five-year radiographic follow-up results of the Korean sandblasting with large grit, and acid etching (SLA)-treated implant system. Materials and Methods The subjects of the study are 54 patients who have been followed-up to date, of the patients who underwent implant surgery from May 1, 2009 to April 30, 2011. In all, 176 implant placements were performed. Radiographs were taken before the first surgery, immediately after the first and second surgeries, immediately and six months after the final prosthesis installation, and every year after that. Bone loss was evaluated by the method suggested by Romanos and Nentwig. Results A total of 176 implant placements were performed-122 in men and 54 in women. These patients have been followed-up for an average of 4.9 years. In terms of prosthetic appliances, there were 156 bridges and 20 single prostheses. Nine implants installed in the maxillary molar area, three in the mandibular molar area and two in the maxillary premolar area were included in group M, with bone loss less than 2 mm at the crestal aspect of the implant. Of these, eight implants were single prostheses. In all, six implants failed-four in the mandible and two in the maxilla. All of these failures occurred in single-implant cases. The implant survival rate was 98.1% on the maxilla and 94.3% on the mandible, with an overall survival of 96.6%. Conclusion Within the limitations of this study, implants with the SLA surface have a very superior survival rate in relatively poor bone environments such as the maxilla. PMID:26734558

  14. Investigation of the neutral-solution etch process for refractive SOE antireflective surfaces

    SciTech Connect

    Maish, A.B.

    1991-01-01

    Antireflection of optically clear glass used in photovoltaic concentrator refractive secondary optical elements (SOE's) was investigated using the neutral-solution etch process developed by Schott Glass. Test coupons and SOE's made from barium zinc glass, which does not solarize under ultraviolet exposure, were successfully etched at the center point process variable conditions of 87{degrees}C and 24 hours. Reflectance of the plano-plano dropped from 7.7% to 0.8%, with a corresponding increase in transmission from 91.7% to 98.5%. The etching process uses non-hydrofluoric, relatively non-toxic chemicals in a low-cost process well suited for use by photovoltaic system manufacturers during production. 10 refs., 4 figs., 1 tab.

  15. Incinerator ash dissolution model for the system: Plutonium, nitric acid and hydrofluoric acid

    SciTech Connect

    Brown, E V

    1988-06-01

    This research accomplished two goals. The first was to develop a computer program to simulate a cascade dissolver system. This program would be used to predict the bulk rate of dissolution in incinerator ash. The other goal was to verify the model in a single-stage dissolver system using Dy/sub 2/O/sub 3/. PuO/sub 2/ (and all of the species in the incinerator ash) was assumed to exist as spherical particles. A model was used to calculate the bulk rate of plutonium oxide dissolution using fluoride as a catalyst. Once the bulk rate of PuO/sub 2/ dissolution and the dissolution rate of all soluble species were calculated, mass and energy balances were written. A computer program simulating the cascade dissolver system was then developed. Tests were conducted on a single-stage dissolver. A simulated incinerator ash mixture was made and added to the dissolver. CaF/sub 2/ was added to the mixture as a catalyst. A 9M HNO/sub 3/ solution was pumped into the dissolver system. Samples of the dissolver effluent were analyzed for dissolved and F concentrations. The computer program proved satisfactory in predicting the F concentrations in the dissolver effluent. The experimental sparge air flow rate was predicted to within 5.5%. The experimental percentage of solids dissolved (51.34%) compared favorably to the percentage of incinerator ash dissolved (47%) in previous work. No general conclusions on model verification could be reached. 56 refs., 11 figs., 24 tabs.

  16. Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect

    PubMed Central

    2012-01-01

    We study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100?nm and length of about 125??m formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 1??m results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1??m increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of black silicon, which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing. PMID:23009051

  17. Online Etching of a Neutron-Irradiated Acid-Resistant Residue of Allende Clues to the Character and Origin of Phase Q?

    NASA Astrophysics Data System (ADS)

    Holinger, S.; Riebe, M.; Clay, P. L.; Gilmour, J. D.; Ruzie, L.; Kuga, M.; Maden, C.; Busemann, H.

    2015-07-01

    The online etching noble gas study of the n-irradiated HF/HCl-residue of Allende yields a late I-Xe age, little Q-gas and a delayed gas release compared to an unirradiated residue run. First data for a larger Vigarano residue might also be presented.

  18. Shallow Etching of GaAs/AlGaAs Heterostructures in Context of HEMT Fabrication

    NASA Astrophysics Data System (ADS)

    Kumar, Ch. Ravi; Rajaram, G.

    2011-07-01

    Gate recess etching is a key step in the fabrication process of high electron mobility transistors (HEMTs). The thin n+ cap layer needs to be etched without destroying the underlying supply layer. Conventional GaAs etch solutions based on H2SO4 or H3PO4 acids have high etch rates and hence present difficulties in the control of etch rates for shallow etches. Etches using Citric acid (CA) based solutions have been reported to have potential in such applications. Such etches with varying ratio of CA:H2O2:H2O are compared. A suitable recipe has been obtained for shallow gate recess etch and a HEMT is fabricated using the process.

  19. Pre-etching vs. grinding in promotion of adhesion to intact enamel using self-etch adhesives.

    PubMed

    Nazari, Amir; Shimada, Yasushi; Sadr, Alireza; Tagami, Junji

    2012-01-01

    This study was aimed to determine the effectiveness of grinding and pre-etching in promotion of adhesion to human intact enamel using the self-etch adhesive (SEA) Adper Easy Bond (3M ESPE). Etch-and-rinse adhesive Adper Single Bond (3M ESPE) served as control. Composite cylinders (AP-X Kuraray) were built and after 24 h micro-shear bond strengths (MSBS) were measured. Bonding interfaces were evaluated under scanning electron microscope (SEM). For evaluation of average roughness (Ra) and morphological analysis, treated enamel surfaces were observed under SEM and confocal laser scanning microscope (CLSM) with 3D surface profiling. Highest bond strengths were obtained by pre-etching and grinding showed a less significant role. Phosphoric acid (PA) etching compare to grinding created significantly rougher surface (Ra: 0.72 and 0.43 m respectively). Therefore, this study recommends pre-etching the intact enamel prior to application of the adhesive instead of grinding. PMID:22673472

  20. Electrolytic etching process provides effective bonding surface on stainless steel

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Electrolytic etching process prepares surfaces of a stainless steel shell for reliable, high strength adhesive bonding to dielectric materials. The process uses a 25 percent aqueous solution of phosphoric acid.

  1. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  2. Enhanced ferro-actuator with a porosity-controlled membrane using the sol-gel process and the HF etching method

    NASA Astrophysics Data System (ADS)

    Kim, KiSu; Ko, Seong Young; Park, Jong-Oh; Park, Sukho

    2016-01-01

    In this paper, we propose a ferro-actuator using a porous polyvinylidene difluoride (PVDF) membrane. In detail, we fabricated the silica-embedded PVDF membrane using a sol-gel process with PVDF solution and tetraethyl orthosilicate (TEOS) solution, where the size of the silica was determined by the ratio of the PVDF and TEOS solutions. Using hydrofluoric acid (HF) etching, the silica were removed from the silica-embedded PVDF membrane, and porous PVDF membranes with different porosities were obtained. Finally, through absorption of a ferrofluid on the porous PVDF membrane, the proposed ferro-actuator using porous PVDF membranes with different porosities was fabricated. We executed the characterization and actuation test as follows. First, the silica size of the silica-embedded PVDF membrane and the pore size of the porous PVDF membrane were analyzed using scanning electron microscopy (SEM) imaging. Second, energy-dispersive x-ray spectroscopy analysis showed that the silica had clearly been removed from the silica-embedded PVDF membrane by HF etching. Third, through x-ray photoelectron spectroscopy and vibrating sample magnetometer (VSM) of the ferro-actuators, we found that more ferrofluids were absorbed by the porous PVDF membrane when the pore of the membrane was smaller and uniformly distributed. Finally, we executed tip displacement and a blocking force test of the proposed ferro-actuator using the porous PVDF membrane. Similar to the VSM result, the ferro-actuator that used a porous PVDF membrane with smaller pores exhibited better actuation performance. The ferro-actuator that used a porous PVDF membrane displayed a tip displacement that was about 7.2-fold better and a blocking force that was about 6.5-fold better than the ferro-actuator that used a pure PVDF membrane. Thus, we controlled the pore size of the porous PVDF membrane and enhanced the actuation performance of the ferro-actuator using a porous PVDF membrane.

  3. Chemical downstream etching of tungsten

    SciTech Connect

    Blain, M.G.; Jarecki, R.L.; Simonson, R.J.

    1998-07-01

    The downstream etching of tungsten and tungsten oxide has been investigated. Etching of chemical vapor deposited tungsten and e-beam deposited tungsten oxide samples was performed using atomic fluorine generated by a microwave discharge of argon and NF{sub 3}. Etching was found to be highly activated with activation energies approximated to be 6.0{plus_minus}0.5thinspkcal/mol and 5.4{plus_minus}0.4thinspkcal/mol for W and WO{sub 3}, respectively. In the case of F etching of tungsten, the addition of undischarged nitric oxide (NO) directly into the reaction chamber results in the competing effects of catalytic etch rate enhancement and the formation of a nearly stoichiometric WO{sub 3} passivating tungsten oxide film, which ultimately stops the etching process. For F etching of tungsten oxide, the introduction of downstream NO reduces the etch rate. {copyright} {ital 1998 American Vacuum Society.}

  4. Epidermal lipids and the natural history of hydrofluoric acid (HF) injury.

    PubMed

    Noonan, T; Carter, E J; Edelman, P A; Zawacki, B E

    1994-06-01

    To explain several fortuitous observations, we hypothesized that there is a naturally occurring lipid 'barrier' to HF injury in guinea-pig skin and sought to characterize both the barrier and its role in the natural history of such injuries. Under anaesthesia, the dorsal trunk skin of groups of guinea-pigs was gently clipped of hair, washed with chloroform, soap and water, acetone or nothing (controls), and examined histologically for the presence of neutral lipid. Thereafter, in animal groups similarly washed, 1.5 in x 1.5 in (38 mm x 38 mm) areas were exposed to 40 per cent HF for up to 50 min and: (a) mean percentages of exposed areas with gross necrosis 5 days postinjury plotted on dose-response curves; or (b) less than 4 h after exposure to HF, intra-aortic India ink was injected and skin specimens examined to discern depth of ischaemia and necrosis. In contrast to controls, washing reduced neutral lipid in epidermis and significantly (at P < 0.001) increased susceptibility to injury by HF. With very rare (but interesting) exceptions, HF injury was found to be full thickness in depth with ischaemia and coagulative necrosis. In this study, development of guinea-pig skin necrosis due to HF was typically an 'all-or-nothing' 'barrier-penetration' phenomenon relating as much to the integrity of an epidermal lipid barrier as to the duration and intensity of noxious exposure. PMID:8054130

  5. Hydrofluoric acid dermal burns. An assessment of treatment efficacy using an experimental pig model.

    PubMed

    Dunn, B J; MacKinnon, M A; Knowlden, N F; Billmaier, D J; Derelanko, M J; Rusch, G M; Naas, D J; Dahlgren, R R

    1992-09-01

    There currently exist various opinions concerning the best therapy for managing hydrogen fluoride (HF) dermal burns. Previously reported animal studies designed to evaluate the efficacy of certain therapies are not completely convincing. Studies initially were conducted to develop a reliable animal model for assessing efficacy of treatment. Evaluation of several animal species, dosing regimens (HF concentrations, exposure periods), and application techniques showed that the most consistent and reproducible dermal lesions were produced with 38% HF applied to the skin of anesthetized pigs for exposures of 9, 12, or 15 minutes using Hill Top Chamber patches. Using this model, the efficacy of six clinically applicable treatments was assessed by subjectively scoring and statistically analyzing photographic and histopathological data obtained from treated and untreated control lesions. Photographic data analysis ranked treatments with respect to effectiveness as follows: iced Zephiran and 10% calcium acetate soaks--highly effective; 2.5% calcium gluconate gel, 5.0% calcium gluconate injection and iced Hyamine soaks--effective; 10% calcium gluconate injection--ineffective. Histopathological data analysis showed the topical treatments (2.5% calcium gluconate gel, iced Hyamine, or iced Zephiran soaks) to be most effective in reducing superficial epidermal damage, and the 5% calcium gluconate injection or 10% calcium acetate soaks to be beneficial to deeper tissues of the dermis and subdermis. Injection of 10% calcium gluconate was ineffective. This study suggests that the anesthetized pig model has good applicability for assessing efficacy of HF dermal burn therapies. In addition, it indicates that further experimentation with 10% calcium acetate soaks is warranted. PMID:1447596

  6. An incinerator ash dissolution model for the system: plutonium oxide, nitric and hydrofluoric acids

    SciTech Connect

    Brown, E.V.; Tedder, D.W. . School of Chemical Engineering); Gray, L.W. and Co., Aiken, SC . Savannah River Lab.)

    1990-03-01

    A computer model of an air-lift dissolver was developed to predict the dissolution rates for plutonium oxide (PuO{sub 2}), dysprosium oxide (Dy{sub 2}O{sub 3}), and incinerator ash. This model combines surface kinetics with mass transfer effects to obtain overall rate expressions. The mass transfer coefficients are related to several major process variables. These predictions were compared with experimental tests at Savannah River Laboratory using simulated ash and Dy{sub 2}O{sub 3} as a surrogate for refractory PuO{sub 2}. The present version of the model over estimates the residual fluoride concentrations in dissolver effluents by {approx}50% for several reasons, which are discussed. The minimum air sparge rates to achieve liquid circulation in the dissolver are predicted quite well, within {plus minus}6%. The nonvolatile dissolved solids are estimated to within {plus minus}5 to 20%.

  7. Atomic layer etching of germanium

    NASA Astrophysics Data System (ADS)

    Ikeda, Keiji; Imai, Shigeru; Matsumura, Masakiyo

    1997-03-01

    Atomic layer etching of Ge has been investigated experimentally based on the surface chemistry that Cl can adsorb on the clean Ge surface at room temperature and desorb thermally as GeCl 2 at high temperatures. The ideal etching rate of one monolayer per cycle has been achieved. The critical Cl 2 dosage for the saturated etching rate was about 7.210 6 L. Increase of the surface roughness after etching of 100 cycles was about 3.5 monolayers.

  8. Etching fission tracks in zircons

    USGS Publications Warehouse

    Naeser, C.W.

    1969-01-01

    A new technique has been developed whereby fission tracks can be etched in zircon with a solution of sodium hydroxide at 220??C. Etching time varied between 15 minutes and 5 hours. Colored zircon required less etching time than the colorless varieties.

  9. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

    PubMed

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

    2015-01-14

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods. PMID:25521615

  10. Measurement of threading dislocation densities in GaN by wet chemical etching

    NASA Astrophysics Data System (ADS)

    Chen, J.; Wang, J. F.; Wang, H.; Zhu, J. J.; Zhang, S. M.; Zhao, D. G.; Jiang, D. S.; Yang, H.; Jahn, U.; Ploog, K. H.

    2006-09-01

    We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (TDs) in GaN. Large and small etch pits are formed by phosphoric acid on the etched surfaces. The large etch pits are attributed to screw/mixed TDs and the small ones to edge TDs, according to their locations on the surface and Burgers vectors of TDs. Additionally, the origin of small etch pits is confirmed by a transmission electron microscopy. The difference in the size of etch pits is discussed in view of their origin and merging. Overetching at elevated temperatures or for a long time may result in merging of individual etch pits and underestimating of the density of TDs. Wet chemical etching has also been proved efficient in revealing the distribution of TDs in epitaxial lateral overgrowth GaN.

  11. Orthodox etching of HVPE-grown GaN

    NASA Astrophysics Data System (ADS)

    Weyher, J. L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar, R. J.; Mller, S.; Sivel, V. G. M.; Nowak, G.; Grzegory, I.

    2007-07-01

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH+NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool, it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  12. Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

    NASA Astrophysics Data System (ADS)

    Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M. P.; Hihn, J. Y.

    2015-11-01

    Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

  13. Etching of enamel for direct bonding with a thulium fiber laser

    NASA Astrophysics Data System (ADS)

    Kaba? Sarp, Ay?e S.; Glsoy, Murat

    2011-03-01

    Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

  14. Selective Etching of Semiconductor Glassivation

    NASA Technical Reports Server (NTRS)

    Casper, N.

    1982-01-01

    Selective etching technique removes portions of glassivation on a semi-conductor die for failure analysis or repairs. A periodontal needle attached to a plastic syringe is moved by a microprobe. Syringe is filled with a glass etch. A drop of hexane and vacuum pump oil is placed on microcircuit die and hexane is allowed to evaporate leaving a thin film of oil. Microprobe brings needle into contact with area of die to be etched.

  15. Optimized deep wet etching of borosilicate glass through Cr-Au-resist mask

    NASA Astrophysics Data System (ADS)

    Ilie, Mihaela; Foglietti, Vittorio; Cianci, Elena; Minotti, Antonio

    2003-10-01

    In order to obtain specific channels and reservoirs in glass for analytic systems, the structuring of borosilicate glass has been studied. We used wet etching in HF diluted solution for etching channels up to 150 ?m depth. A mask obtained by successively wet etching of previously evaporated Au and Cr layers has been used. A thick SJR 5740 type resist has been spun-on in order to accomplish the optical transfer of the pattern. A normal underetching not larger than the depth, has been obtained when adding a small amount of nitric acid, and using an appropriate annealing process after metal deposition. Neither pinholes nor cracks have been noticed after getting an etching depth of 180 ?m. Double side etching has been performed for penetrating the glass. The dependence of the etching rate vs. both HF and HNO3 concentration is outlined together with the etched surface quality.

  16. Grafting on nuclear tracks using the active sites that remain after the etching process

    NASA Astrophysics Data System (ADS)

    Mazzei, R.; Bermdez, G. Garca; Chappa, V. C.; del Grosso, M. F.; Fernandez, A.

    2006-09-01

    Poly(propylene) foils were irradiated with Ag ions and then chemically etched to produce samples with structured surfaces. After the etching procedure the active sites that remain on the latent track were used to graft acrylic acid. Nuclear tracks before grafting were visualised using a transmission electron microscope. The grafting yields were determined by weight measurements as a function of ion fluence, etching and grafting time, and were also analysed using Fourier transform infrared spectroscopy. Both measurements suggest that the acrylic acid was grafted on etched tracks using the active sites produced by the swift heavy ion beam.

  17. Effects of Acid Treatment on Dental Zirconia: An In Vitro Study

    PubMed Central

    Xie, Haifeng; Shen, Shuping; Qian, Mengke; Zhang, Feimin; Chen, Chen; Tay, Franklin R.

    2015-01-01

    The aim of this study was to evaluate the effects of hydrofluoric (HF) acid, acetic acid, and citric acid treatments on the physical properties and structure of yttria-stabilized tetragonal zirconia polycrystal (Y-TZP) at ambient temperature. In total, 110 bar-shaped zirconia specimens were randomly assigned to 11 groups. The specimens in the control group (C) received no surface treatment, while those in the Cage group were hydrothermally aged at 134C and 0.2 MPa for 20 h. Ten specimens each were immersed at ambient temperature in 5% and 40% HF acid for 2 h (40HF0), 1 day (5HF1, 40HF1), and 5 days (5HF5, 40HF5), while 10 each were immersed at ambient temperature in 10% acetic acid and 20% citric acid for 7 (AC7, CI7) and 14 days (AC14, CI14). X-ray diffraction (XRD) was used to quantitatively estimate the monoclinic phase. Furthermore, flexural strength, surface roughness, and surface Vickers hardness were measured after treatment. Scanning electron microscopy (SEM) was used to characterize the surface morphology. The Cage group specimens exhibited an increased monoclinic phase and flexural strength. Furthermore, 40% HF acid immersion decreased the flexural strength and surface hardness and deteriorated the surface finish, while 5% HF acid immersion only decreased the surface hardness. All the HF acid-immersed specimens showed an etched surface texture on SEM observations, while the other groups did not. These findings suggest that the treatment of Y-TZP with 40% HF acid at ambient temperature causes potential damage, while treatment with 5% HF acid, acetic acid, and citric acid is safe. PMID:26301413

  18. Improvement of photocatalytic activity of brookite titanium dioxide nanorods by surface modification using chemical etching

    NASA Astrophysics Data System (ADS)

    Zhang, Linjie; Menendez-Flores, Victor M.; Murakami, Naoya; Ohno, Teruhisa

    2012-05-01

    Surface morphology of brookite titanium dioxide (TiO2) nanorods was modified by chemical etching with aqueous hydrogen (H2O2)-ammonia (NH3) or sulfuric acid (H2SO4) solution. The brookite nanorods after chemical etching were characterized by TEM, SAED, FE-SEM, XRD and specific surface area measurements. Brookite nanorods after chemical etching with H2O2-NH3 solution exposed new crystal faces in the tips, and nanorods with sharper tips were observed. On the other hand, etching with H2SO4 at 200 C induced morphological changes in the tip faces and broadened the angle between tip faces as a result of dissolution along the [0 0 1] direction, though brookite nanorods were only slightly etched after etching with H2SO4 at room temperature. Photocatalytic activity of brookite nanorods was tested by toluene decomposition in gas phase under ultraviolet irradiation. Brookite nanorods etched with H2O2-NH3 solution showed higher photocatalytic activity than that of brookite nanorods before etching. In the case of H2SO4 etching at 200 C, brookite nanorods after etching exhibited lower photocatalytic activity. One reason for this may be that the formation of newly exposed crystal faces by H2O2-NH3 etching improved separation of redox sites due to their strong oxidation ability.

  19. New zinc and iron electrodes of the second kind in sulphuric acid, hydrofluoric acid and (cyclo)alkylammonium hydrogen sulphates

    NASA Astrophysics Data System (ADS)

    Beck, F.; Krohn, H.; Rashwan, S.; Litzenberger, I.

    New zinc and iron electrodes of the second kind have been examined in solutions of low pH. The electrolytes are 5 - 14 M H 2SO 4, 40 - 60% H 2F 2 and 3 - 5 M (cyclo)alkylammonium hydrogen sulphates in water, methanol or acetonitrile. The cyclic behaviour of the metals (as a layer on glassy carbon) under galvanostatic conditions ( j = 1 - 10 mA cm -2) has been investigated in detail. Optimum results are found with some of the amine salt systems. Morpholinium hydrogen sulphate allows smooth cycling of zinc up to 60 cycles. No passivation in the anodic halfcycle is observed. The corrosion current density is only 10 ?A cm -2. Current efficiency for the electroplating of zinc in the cathodic halfcycle is high. A potential difference of about 300 mV between charge and discharge indicates the presence of a protective layer. Tendency for passivation is a general problem, especially for iron, and it has been studied in greater detail. The results are interpreted in terms of a salt-like layer rather than an oxide film.

  20. ZERODUR: bending strength data for etched surfaces

    NASA Astrophysics Data System (ADS)

    Hartmann, Peter; Leys, Antoine; Carr, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  1. Submicron patterned metal hole etching

    DOEpatents

    McCarthy, Anthony M. (Menlo Park, CA); Contolini, Robert J. (Lake Oswego, OR); Liberman, Vladimir (Needham, MA); Morse, Jeffrey (Martinez, CA)

    2000-01-01

    A wet chemical process for etching submicron patterned holes in thin metal layers using electrochemical etching with the aid of a wetting agent. In this process, the processed wafer to be etched is immersed in a wetting agent, such as methanol, for a few seconds prior to inserting the processed wafer into an electrochemical etching setup, with the wafer maintained horizontal during transfer to maintain a film of methanol covering the patterned areas. The electrochemical etching setup includes a tube which seals the edges of the wafer preventing loss of the methanol. An electrolyte composed of 4:1 water: sulfuric is poured into the tube and the electrolyte replaces the wetting agent in the patterned holes. A working electrode is attached to a metal layer of the wafer, with reference and counter electrodes inserted in the electrolyte with all electrodes connected to a potentiostat. A single pulse on the counter electrode, such as a 100 ms pulse at +10.2 volts, is used to excite the electrochemical circuit and perform the etch. The process produces uniform etching of the patterned holes in the metal layers, such as chromium and molybdenum of the wafer without adversely effecting the patterned mask.

  2. Bond strength with various etching times on young permanent teeth

    SciTech Connect

    Wang, W.N.; Lu, T.C. )

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  3. Femtosecond laser etching of dental enamel for bracket bonding.

    PubMed

    Kabas, Ayse Sena; Ersoy, Tansu; Glsoy, Murat; Akturk, Selcuk

    2013-09-01

    The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique. PMID:24045693

  4. Decontamination of metals using chemical etching

    DOEpatents

    Lerch, Ronald E. (Kennewick, WA); Partridge, Jerry A. (Richland, WA)

    1980-01-01

    The invention relates to chemical etching process for reclaiming contaminated equipment wherein a reduction-oxidation system is included in a solution of nitric acid to contact the metal to be decontaminated and effect reduction of the reduction-oxidation system, and includes disposing a pair of electrodes in the reduced solution to permit passage of an electrical current between said electrodes and effect oxidation of the reduction-oxidation system to thereby regenerate the solution and provide decontaminated equipment that is essentially radioactive contamination-free.

  5. Northern Arabia Etched Terrain

    NASA Technical Reports Server (NTRS)

    2002-01-01

    (Released 23 May 2002) The Science Many places on Mars display scabby, eroded landscapes that commonly are referred to as etched terrain. These places have a ragged, tortured look that reveals a geologic history of intense deposition and erosion. This THEMIS image shows such a place. Here a 10 km diameter crater is superposed on the floor of a 40 km diameter crater, most of which is outside of the image but apparent in the MOLA context image. The rugged crater rim material intermingles with low, flat-topped mesas and layers with irregular outlines along with dune-like ridges on many of the flat surfaces. The horizontal layers that occur throughout the scene at different elevations are evidence of repeated episodes of deposition. The apparent ease with which these deposits have been eroded, most likely by wind, suggests that they are composed of poorly consolidated material. Air-fall sediments are the likely candidate for this material rather than lava flows. The dune-like ridges are probably inactive granule ripples produced from the interaction of wind and erosional debris. The large interior crater displays features that are the result of deposition and subsequent erosion. Its raised rim is barely discernable due to burial while piles and blocks of slumped material along the interior circumference attest to the action of erosion. Some of the blocks retain the same texture as the surrounding undisrupted surface. It appears as if the crater had been buried long enough for the overlying material to be eroded into the texture seen today. Then at some point this overburden foundered and collapsed into the crater. Continuing erosion has caused the upper layer to retreat back from what was probably the original rim of the crater, producing the noncircular appearance seen today. The length of time represented by this sequence of events as well as the conditions necessary to produce them are unknown. The Story Have you ever seen an ink etching, where the artistic cross-hatching of lines creates the image of a town or a landscape? Click on the large THEMIS image above, and you'll see why this scabby, eroded landscape is known as etched terrain. Etched terrain is found in lots of areas of Mars. These places have a ragged, tortured look that reveals a geologic history where material has been deposited and eroded away with great intensity over time. Much of the terrain looks like peeling, layered-on paint. In a sense, that's what it's all about. Deposits of dust and dirt settled down from the air in layer after uneven layer, while the wind kept eroding it away. Dune-like ridges also mark the surface in tiny ripples. Unlike the loose sand dunes we're familiar with on Earth, these ridges are probably harder and more stationary, They are produced by long-term interactions between the sculpting, knife-like action of the Martian wind and the deposited materials of dust and 'dirt' on the surface. What we can also see in this image is a six-mile-wide crater. If you look at the context image to the right, you can see that it is actually a crater within a crater. The larger crater is about 24 miles wide in diameter. (Students! How many times bigger is the larger crater than the one that lies inside of it? If you look at the context image, you can get a really good sense of what 'four times bigger' really means.) What's interesting about this crater is that it doesn't have typical features known to many craters: it isn't nice-and-neatly round and its raised rim is barely noticeable. That's because there's been a whole lot of depositing and eroding going on here too. After the impact crater formed, it was probably entirely buried by deposits over time. In fact, it was probably buried long enough for the overlying material to be eroded into the texture seen today. At some point, the load on top foundered and collapsed into the crater. Around the inside circumference of the crater, you can see piles of slumped material (material that has slid downslope). Some of these blocks of material have the same texture as surrounding terrain that hasn't been disrupted. That's because of continuing erosion acting on all of these features. In the upper layers, continuing erosion has also caused a retreat from the original rim of the crater, producing the noncircular shape seen today.

  6. On the influence of etch pits in the overall dissolution rate of apatite basal sections

    NASA Astrophysics Data System (ADS)

    Alencar, Igor; Guedes, Sandro; Palissari, Rosane; Hadler, Julio C.

    2015-09-01

    Determination of efficiencies for particle detection plays a central role for proper estimation of reaction rates. If chemical etching is employed in the revelation of latent particle tracks in solid-state detectors, dissolution rates and etchable lengths are important factors governing the revelation and observation. In this work, the mask method, where a reference part of the sample is protected during dissolution, was employed to measure step heights in basal sections of apatite etched with a nitric acid, HNO, solution at a concentration of 1.1 M and a temperature of 20 C. We show a drastic increase in the etching velocity as the number of etch pits in the surface augments, in accordance with the dissolution stepwave model, where the outcrop of each etch pit generates a continuous sequence of stepwaves. The number of etch pits was varied by irradiation with neutrons and perpendicularly incident heavy ions. The size dependence of the etch-pit opening with etching duration for ion (200-300 MeV 152Sm and 238U) tracks was also investigated. There is no distinction for the etch pits between the different ions, and the dissolution seems to be governed by the opening velocity when a high number of etch pits are present in the surface. Measurements of the etchable lengths of these ion tracks show an increase in these lengths when samples are not pre-annealed before irradiation. We discuss the implications of these findings for fission-track modelling.

  7. Controlled in situ etch-back

    NASA Technical Reports Server (NTRS)

    Mattauch, R. J.; Seabaugh, A. C. (inventors)

    1981-01-01

    A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

  8. High aspect ratio silicon etch: A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Pamarthy, Sharma

    2010-09-01

    High aspect ratio (HAR) silicon etch is reviewed, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology. This potential large scale application requires HAR etch with high and stable throughput, controllable profile and surface properties, and low costs.

  9. Etching and Growth of GaAs

    NASA Technical Reports Server (NTRS)

    Seabaugh, A. C.; Mattauch, R., J.

    1983-01-01

    In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

  10. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J. (Billerica, MA); Piwczyk, Bernhard P. (Dunbarton, NH)

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  11. Effect of etching on the electrical and magnetic properties of writer shield material

    NASA Astrophysics Data System (ADS)

    Han, Hongmei; Li, Yang; Su, Wencheng; Chen, Lifan; Zhang, Jinqiu

    2013-11-01

    Magnetron sputtered permalloy films are treated by wet chemical etchings with acid etchant as well as fluorine based reactive ion etch (RIE). Upon these treatments, the resistivity and coercivity of the permalloy film increase is within 10 %. No significant increase observed with prolonged etching time. The effective magnetization change of the permalloy films are within 5 % post the treatments. Atomic force microscope (AFM) and transmission electron microscope (TEM) are used to study the surface and interface evolution of permalloy film upon etching. The small impact on the electrical and magnetic properties of permalloy films can be correlated with the surface oxide protecting layer formation during the etch. Consequently, sputtered NiFe is a safe material to expose to these etching processes for write pole shield application.

  12. Which self-etch bonding systems are suitable for which clinical indications?

    PubMed

    Haller, Bernd

    2013-10-01

    Self-etch bonding systems are promoted as a time-saving and user-friendly alternative to etch-and-rinse bonding systems. Self-etch adhesives are characterized by a relatively mild etching effect, resulting in a relatively low incidence of postoperative hypersensitivity. On the other hand, their mild etching effect causes a reduction in bond strength to enamel compared to that achieved with phosphoric acid etching. All-in-one adhesives still suffer from less-than-optimal initial bond strengths and from inadequate durability of the bond. Future developments need to focus on the elimination of water deposits along the adhesive interface of all-in-one adhesives. While self-etch adhesives may yield acceptable results when applied in combination with light-cured composite resin, their acidic monomers inhibit the polymerization of auto-cured and dual-cured composite resins. Unfortunately, most "self-cure" or "dual-cure" activators do not overcome this problem. This incompatibility has to be taken into consideration when using self-etch adhesives for adhesive cementation and for core build-up restorations. When assessing self-etch bonding systems, it should be noted that they do not represent a homogenous category of materials but rather comprise a great variety of different types of products, each with specific strengths and weaknesses. PMID:23971056

  13. Dry Ice Etches Terrain

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Figure 1

    Every year seasonal carbon dioxide ice, known to us as 'dry ice,' covers the poles of Mars. In the south polar region this ice is translucent, allowing sunlight to pass through and warm the surface below. The ice then sublimes (evaporates) from the bottom of the ice layer, and carves channels in the surface.

    The channels take on many forms. In the subimage shown here (figure 1) the gas from the dry ice has etched wide shallow channels. This region is relatively flat, which may be the reason these channels have a different morphology than the 'spiders' seen in more hummocky terrain.

    Observation Geometry Image PSP_003364_0945 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on 15-Apr-2007. The complete image is centered at -85.4 degrees latitude, 104.0 degrees East longitude. The range to the target site was 251.5 km (157.2 miles). At this distance the image scale is 25.2 cm/pixel (with 1 x 1 binning) so objects 75 cm across are resolved. The image shown here has been map-projected to 25 cm/pixel . The image was taken at a local Mars time of 06:57 PM and the scene is illuminated from the west with a solar incidence angle of 75 degrees, thus the sun was about 15 degrees above the horizon. At a solar longitude of 219.6 degrees, the season on Mars is Northern Autumn.

  14. Wet Chemical Etching Survey of III-Nitrides

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hays, D.C.; MacKenzie, J.D.; Pearton, S.J.; Ren, F.; Shul, R.J.; Vartuli, C.B.; Zolper, J.C.

    1999-02-04

    Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75 C. Only KOH-based solutions were found to etch AlN and InAlN. No etchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity. The native oxide on most of the nitrides could be removed in potassium tetraborate at 75 C, or HCl/H{sub 2}O at 25 C.

  15. Adiabatic tapered optical fiber fabrication in two step etching

    NASA Astrophysics Data System (ADS)

    Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

    2016-01-01

    A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

  16. Steering the efficiency of carbon nanotube-silicon photovoltaic cells by acid vapor exposure: a real-time spectroscopic tracking.

    PubMed

    Pintossi, C; Pagliara, S; Drera, G; De Nicola, F; Castrucci, P; De Crescenzi, M; Crivellari, M; Boscardin, M; Sangaletti, L

    2015-05-13

    Hybrid carbon nanotube-silicon (CNT-Si) junctions have been investigated by angle resolved photoemission spectroscopy (AR-XPS) with the aim to clarify the effects of a nonstoichiometric silicon oxide buried interface on the overall cell efficiency. A complex silicon oxide interface has been clearly identified and its origin and role in the heterojunction have been probed by exposing the cells to hydrofluoric (HF) and nitric (HNO3) acid. Real-time monitoring of the cell efficiencies during the steps following acid exposure (up to 1 week after etching) revealed a correlation between the thickness and chemical state of the oxide layer and the cell efficiencies. By matching the AR-XPS and Raman spectroscopy with the electrical response data it has been possible to discriminate the effects on the cell efficiency of the buried SiO(x) interface from those related to CNT acid doping. The overall cell behavior recorded for different thicknesses of the SiO(x) interface indicates that the buried oxide layer is likely acting as a passivating/inversion layer in a metal-insulator-semiconductor junction. PMID:25902284

  17. Study on inductively coupled plasma etching induced damage of InSb

    NASA Astrophysics Data System (ADS)

    Wang, Liwen; Si, Junjie; Zhang, Guodong; Cheng, Caijing; Geng, Dongfeng

    2014-11-01

    InSb is an important ?-?narrow gap compound semiconductor material. It is widely used in optoelectronic devices manufacture especially mid-wave infrared detectors. With the application of ICP etching in large-scale InSb IRFPA detectors fabrication process, the influence of ICP etching induced damage on InSb IRFPA devices has been paid more attention. Surface states which reflect the characteristics of semiconductor surface play an important role in the study on etching damage of semiconductor materials. In this paper, the surface state density on three InSb samples: one sample without etching, one sample etched by ICP and another sample wet etched by lactic acid/nitric acid etchant after ICP etching, is tested and calculated by quasi-static C-V method. The characterization and removal of ICP etching induced damage are investigated. Furthermore, the method of testing and calculating the distribution of surface state density has been presented detailedly in this paper. This work plays a significant role in the development of large-scale InSb IRFPA detectors.

  18. Etching conditions for resin-modified glass ionomer cement for orthodontic brackets.

    PubMed

    Valente, Rudolfo M; De Rijk, Waldemar G; Drummond, James L; Evans, Carla A

    2002-05-01

    This study reports the tensile bond strength of orthodontic eyelets (RMO, Inc, Denver, Colo) bonded to human extracted teeth with a resin-modified glass ionomer cement (RMGIC) (Fuji Ortho LC, GC America, Alsip, Ill) and various acid etchants (Etch-37 and All-Etch, Bisco, Schaumburg, Ill; Ultra Etch, 3M Unitek, St Paul, Minn) for enamel preparation before bonding. The enamel etch conditions were as follows: 37% phosphoric acid with silica; 37% phosphoric acid, silica-free; 10% phosphoric acid, silica-free; 10% polyacrylic acid; and unetched enamel. Bond strength was measured by pulling in tension on the eyelet with a 0.018-in steel wire perpendicular to the enamel surface with a testing machine (Instron model 1125, Canton, Mass) at a speed of 2 mm/min. A light-cured resin cement (Transbond XT, 3M Unitek, Monrovia, Calif) applied to enamel etched with 37% phosphoric acid containing silica served as a control. Each group included 30 specimens. The Weibull distribution (m) was used for statistical analysis with a 90% CI. The different etchants used with RMGIC did not affect tensile bond strength. The resin cement group had the highest tensile strength. Significantly lower bond strengths were observed when glass ionomer cement was used to bond orthodontic attachments to nonetched teeth. However, unlike resin cement, RMGIC can bond effectively to etched teeth in a moist environment without an additional bonding agent. PMID:12045770

  19. ION BEAM ETCHING EFFECTS IN BIOLOGICAL MICROANALYSIS

    EPA Science Inventory

    Oxygen ion beam sputter etching used in SIMS has been shown to produce morphologic effects which have similarities and differences in comparison to rf plasma etching of biological specimens. Sputter yield variations resulting from structural microheterogeneity are illustrated (e....

  20. Semiconductor etching by hyperthermal neutral beams

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K. (Inventor); Giapis, Konstantinos P. (Inventor)

    1999-01-01

    An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

  1. Apparatus for edge etching of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Casajus, A.

    1986-01-01

    A device for use in the production of semiconductors, characterized by etching in a rapidly rotating etching bath is described. The fast rotation causes the surface of the etching bath to assume the form of a paraboloid of revolution, so that the semiconductor wafer adjusted at a given height above the resting bath surface is only attacked by etchant at the edges.

  2. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    PubMed

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG. PMID:26521000

  3. Post-Synthetic Anisotropic Wet-Chemical Etching of Colloidal Sodalite ZIF Crystals.

    PubMed

    Avci, Civan; Ariez-Soriano, Javier; Carn-Snchez, Arnau; Guillerm, Vincent; Carbonell, Carlos; Imaz, Inhar; Maspoch, Daniel

    2015-11-23

    Controlling the shape of metal-organic framework (MOF) crystals is important for understanding their crystallization and useful for myriad applications. However, despite the many advances in shaping of inorganic nanoparticles, post-synthetic shape control of MOFs and, in general, molecular crystals remains embryonic. Herein, we report using a simple wet-chemistry process at room temperature to control the anisotropic etching of colloidal ZIF-8 and ZIF-67 crystals. Our work enables uniform reshaping of these porous materials into unprecedented morphologies, including cubic and tetrahedral crystals, and even hollow boxes, by an acid-base reaction and subsequent sequestration of leached metal ions. Etching tests on these ZIFs reveal that etching occurs preferentially in the crystallographic directions richer in metal-ligand bonds; that, along these directions, the etching rate tends to be faster on the crystal surfaces of higher dimensionality; and that the etching can be modulated by adjusting the pH of the etchant solution. PMID:26458081

  4. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  5. Enamel resistance to demineralization following Er:YAG laser etching for bonding orthodontic brackets

    PubMed Central

    Ahrari, Farzaneh; Poosti, Maryam; Motahari, Pourya

    2012-01-01

    Background: Several studies have shown that laser-etching of enamel for bonding orthodontic brackets could be an appropriate alternative for acid conditioning, since a potential advantage of laser could or might be caries prevention. This study compared enamel resistance to demineralization following etching with acid phosphoric or Er:YAG laser for bonding orthodontic brackets. Materials and Methods: Fifty sound human premolars were divided into two equal groups. In the first group, enamel was etched with 37% phosphoric acid for 15 seconds. In the second group, Er:YAG laser (wavelength, 2 940 nm; 300 mJ/pulse, 10 pulses per second, 10 seconds) was used for tooth conditioning. The teeth were subjected to 4-day PH-cycling process to induce caries-like lesions. The teeth were then sectioned and the surface area of the lesion was calculated in each microphotographs and expressed in pixel. The total surface of each specimen was 196 608 pixels. Results: Mean lesion areas were 7 171 and 7532 pixels for Laser-etched and Acid-etched groups, respectively. The two sample t-test showed that there was no significant difference in lesion area between the two groups (P = 0.914). Conclusion: Although Er:YAG laser seems promising for etching enamel before bonding orthodontic brackets, it does not reduce enamel demineralization when exposed to acid challenge. PMID:23162591

  6. The effect of additional etching and curing mechanism of composite resin on the dentin bond strength

    PubMed Central

    Lee, In-Su; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon

    2013-01-01

    PURPOSE The aim of this study was to evaluate the effects of additional acid etching and curing mechanism (light-curing or self-curing) of a composite resin on the dentin bond strength and compatibility of one-step self-etching adhesives. MATERIALS AND METHODS Sixteen human permanent molars were randomly divided into eight groups according to the adhesives used (All-Bond Universal: ABU, Clearfil S3 Bond: CS3), additional acid etching (additional acid etching performed: EO, no additional acid etching performed: EX), and composite resins (Filtek Z-250: Z250, Clearfil FII New Bond: CFNB). Group 1: ABU-EO-Z250, Group 2: ABU-EO-CFNB, Group 3: ABU-EX-Z250, Group 4: ABU-EX-CFNB, Group 5: CS3-EO-Z250, Group 6: CS3-EO-CFNB, Group 7: CS3-EX-Z250, Group 8: CS3-EX-CFNB. After bonding procedures, composite resins were built up on dentin surfaces. After 24-hour water storage, the teeth were sectioned to make 10 specimens for each group. The microtensile bond strength test was performed using a microtensile testing machine. The failure mode of the fractured specimens was examined by means of an optical microscope at ×20 magnification. The data was analyzed using a one-way ANOVA and Scheffe's post-hoc test (α=.05). RESULTS Additional etching groups showed significantly higher values than the no additional etching group when using All-Bond Universal. The light-cured composite resin groups showed significantly higher values than the self-cured composite resin groups in the Clearfil S3 Bond. CONCLUSION The additional acid etching is beneficial for the dentin bond strength when using low acidic one-step self-etch adhesives, and low acidic one-step self-etch adhesives are compatible with self-cured composite resin. The acidity of the one-step self-etch adhesives is an influencing factor in terms of the dentin bonding strength and incompatibility with a self-cured composite resin. PMID:24353889

  7. Correlation between the grain orientation dependence of color etching and chemical etching.

    PubMed

    Bonyr, Attila; Szab, Peter J

    2012-12-01

    A gray cast iron specimen was investigated by color and chemical etching with optical and atomic force microscopy, and the effect of grain orientation on the effectiveness of etching was examined. It was proven that the grain orientation dependence of chemical and color etching is just the opposite, and that the specimen surface after color etching is not uniformly smooth. Explanation for the layer structure of the color etched iron specimen is given. PMID:23149222

  8. Cryogenic electron beam induced chemical etching.

    PubMed

    Martin, Aiden A; Toth, Milos

    2014-11-12

    Cryogenic cooling is used to enable efficient, gas-mediated electron beam induced etching (EBIE) in cases where the etch rate is negligible at room and elevated substrate temperatures. The process is demonstrated using nitrogen trifluoride (NF3) as the etch precursor, and Si, SiO2, SiC, and Si3N4 as the materials volatilized by an electron beam. Cryogenic cooling broadens the range of precursors that can be used for EBIE, and enables high-resolution, deterministic etching of materials that are volatilized spontaneously by conventional etch precursors as demonstrated here by NF3 and XeF2 EBIE of silicon. PMID:25333843

  9. Effect of grain orientation on chemical etching.

    PubMed

    Szab, Peter J; Bonyr, Attila

    2012-02-01

    The effect of grain orientation on the effectiveness of pre-etching before color etching was investigated by the help of electron back scattering diffraction and atomic force microscopy in case of cast iron. Strong correlation was found between the angle between the specimen normal and the [001] orientation of the ferrite grains and the depth of the etching. If the angle between the specimen normal and the [001] direction of the ferritic grain is small, then the speed of the etching is low, but the lateral variation of the etching speed within the grain is larger. PMID:22030301

  10. Secret of formulating a selective etching or cleaning solution for boron nitride (BN) thin film

    NASA Astrophysics Data System (ADS)

    Hui, Wing C.

    2004-04-01

    Boron nitride thin film has a very unique characteristic of extremely high chemical inertness. Thus, it is a better hard mask than silicon nitride for aggressive etching solutions, such as the isotropic HF/HNO3/CH3COOH (or HNA) etchant for silicon. However, because of its high chemical inertness, it is also difficult to remove it. Plasma etching with Freon gases can etch the boron nitride film, but it is unselective to silicon, silicon dioxide or silicon nitride. Cleaning up the boron nitride film with plasma etching will usually leave a damaged or foggy surface. A special wet chemical solution has been developed for etching or cleaning boron nitride film selectively. It can etch boron nitride, but not the coatings or substrates of silicon, silicon nitride and silicon dioxide. It is a very strong oxidizing agent consisting of concentrated sulfuric acid (H2SO4) and hydrogen peroxide (H2O2), but different from the common Piranha Etch. It may be even more interesting to understand the logic or secret behind of how to formulate a new selective etching solution. Various chemical and chemical engineering aspects were considered carefully in our development process. These included creating the right electrochemical potential for the etchant, ensuring large differences in chemical kinetics to make the reactions selective, providing proper mass transfer for removing the by products, etc.

  11. Plasmoids for etching and deposition

    NASA Astrophysics Data System (ADS)

    Pothiraja, Ramasamy; Bibinov, Nikita; Awakowicz, Peter

    2014-11-01

    In this manuscript we show fascinating properties of plasmoids, which are known to be self-sustained plasma entities, and can exist without being in contact with any power supply. Plasmoids are produced in a filamentary discharge in a Ar/CH4 mixture with a high production rate of about 105 s-1. It is observed that plasmoids etch the solid amorphous hydrocarbon film with high efficiency. Energy density of the plasmoid, which is estimated on the basis of glowing area of plasmoids in the photographic image and sublimation enthalpy of the etched hydrocarbon film, amounts to about 90 J m-3. This value is much lower than the energy density of observed ball lightning (natural plasmoid). A very surprising property is an attraction between plasmoids, and the formation of plasmoid-groups. Because of this attractive force, carbon material, which is collected in plasmoids by etching of the hydrocarbon film or by propagation through a methane/argon gas mixture, is compressed into crystals.

  12. Evaluation of over-etching technique in the endodontically treated tooth restoration

    PubMed Central

    Migliau, Guido; Piccoli, Luca; Besharat, Laith Konstantinos; Di Carlo, Stefano; Pompa, Giorgio

    2015-01-01

    Summary The main purpose of a post-endodontic restoration with posts is to guarantee the retention of the restorative material. The aim of the study was to examine, through the push-out test, how bond strength between the post and the dentin varied with etching time with 37% orthophosphoric acid, before cementation of a glass fiber post. Moreover, it has been examined if over-etching (application time of the acid: 2 minutes) was an effective technique to improve the adhesion to the endodontic substrate, after highlighting the problems of adhesion concerning its anatomical characteristics and the changes after the endodontic treatment. Highest bond strength values were found by etching the substrate for 30 sec., while over-etching didn’t improve bond strength to the endodontic substrate. PMID:26161247

  13. Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application.

    PubMed

    Reshak, A H; Shahimin, M M; Shaari, S; Johan, N

    2013-11-01

    The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light reflectance, enhancement of light trapping in the cell and increment of light absorption. The current work represent studies conducted in surface modification of single-crystalline silicon solar cells using wet chemical etching techniques. Two etching types are applied; alkaline etching (KOH:IPA:DI) and acidic etching (HF:HNO3:DI). The alkaline solution resulted in anisotropic profile that leads to the formation of inverted pyramids. While acidic solution formed circular craters along the front surface of silicon wafer. This surface modification will leads to the reduction of light reflectance via texturizing the surface and thereby increases the short circuit current and conversion rate of the solar cells. PMID:24139943

  14. Evaluation of over-etching technique in the endodontically treated tooth restoration.

    PubMed

    Migliau, Guido; Piccoli, Luca; Besharat, Laith Konstantinos; Di Carlo, Stefano; Pompa, Giorgio

    2015-01-01

    The main purpose of a post-endodontic restoration with posts is to guarantee the retention of the restorative material. The aim of the study was to examine, through the push-out test, how bond strength between the post and the dentin varied with etching time with 37% orthophosphoric acid, before cementation of a glass fiber post. Moreover, it has been examined if over-etching (application time of the acid: 2 minutes) was an effective technique to improve the adhesion to the endodontic substrate, after highlighting the problems of adhesion concerning its anatomical characteristics and the changes after the endodontic treatment. Highest bond strength values were found by etching the substrate for 30 sec., while over-etching didn't improve bond strength to the endodontic substrate. PMID:26161247

  15. Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits

    DOEpatents

    Kampwirth, Robert T. (Darien, IL); Schuller, Ivan K. (Woodridge, IL); Falco, Charles M. (Woodridge, IL)

    1981-01-01

    An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate, and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

  16. Fabrication of IR-transparent microfluidic devices by anisotropic etching of channels in CaF2.

    PubMed

    Lehmkuhl, Brynson; Noblitt, Scott D; Krummel, Amber T; Henry, Charles S

    2015-11-21

    A simple fabrication method for generating infrared (IR) transparent microfluidic devices using etched CaF2 is demonstrated. To etch microfluidic channels, a poly(dimethylsiloxane) (PDMS) microfluidic device was reversibly sealed on a CaF2 plate and acid was pumped through the channel network to perform anisotropic etching of the underlying CaF2 surface. To complete the CaF2 microfluidic device, another CaF2 plate was sealed over the etched channel using a 700 nm thick layer of PDMS adhesive. The impact of different acids and their concentrations on etching was studied, with HNO3 giving the best results in terms of channel roughness and etch rates. Etch rate was determined at etching times ranging from 4-48 hours and showed a linear correlation with etching time. The IR transparency of the CaF2 device was established using a Fourier Transform IR microscope and showed that the device could be used in the mid-IR region. Finally, utility of the device was demonstrated by following the reaction of N-methylacetamide and D2O, which results in an amide peak shift to 1625 cm(-1) from 1650 cm(-1), using an FTIR microscope. PMID:26450455

  17. Effect of enamel etching time on roughness and bond strength.

    PubMed

    Barkmeier, Wayne W; Erickson, Robert L; Kimmes, Nicole S; Latta, Mark A; Wilwerding, Terry M

    2009-01-01

    The current study examined the effect of different enamel conditioning times on surface roughness and bond strength using an etch-and-rinse system and four self-etch adhesives. Surface roughness (Ra) and composite to enamel shear bond strengths (SBS) were determined following the treatment of flat ground human enamel (4000 grit) with five adhesive systems: (1) Adper Single Bond Plus (SBP), (2) Adper Prompt L-Pop (PLP), (3) Clearfil SE Bond (CSE), (4) Clearfil S3 Bond (CS3) and (5) Xeno IV (X4), using recommended treatment times and an extended treatment time of 60 seconds (n = 10/group). Control groups were also included for Ra (4000 grit surface) and SBS (no enamel treatment and Adper Scotchbond Multi-Purpose Adhesive). For surface roughness measurements, the phosphoric acid conditioner of the SBP etch-and-rinse system was rinsed from the surface with an air-water spray, and the other four self-etch adhesive agents were removed with alternating rinses of water and acetone. A Proscan 2000 non-contact profilometer was used to determine Ra values. Composite (Z100) to enamel bond strengths (24 hours) were determined using Ultradent fixtures and they were debonded with a crosshead speed of 1 mm/minute. The data were analyzed with ANOVA and Fisher's LSD post-hoc test. The etch-and- rinse system (SBP) produced the highest Ra (microm) and SBS (MPa) using both the recommended treatment time (0.352 +/- 0.028 microm and 40.5 +/- 6.1 MPa) and the extended treatment time (0.733 +/- 0.122 microm and 44.2 +/- 8.2 MPa). The Ra and SBS of the etch-and-rinse system were significantly greater (p < 0.05) than all the self-etch systems and controls. Increasing the treatment time with phosphoric acid (SBP) and PLP produced greater surface roughness (p < 0.05) but did not result in significantly higher bond strengths (p > 0.05). PMID:19363978

  18. AAPSM repair utilizing transparent etch stop layer

    NASA Astrophysics Data System (ADS)

    Taylor, Darren; Cangemi, Michael; Lassiter, Matthew; Cangemi, Marc; Poortinga, Eric

    2004-12-01

    Repair of etched quartz defects on AAPSM products negatively affect manufacturability in the mask shop. Currently there are few solutions to repair etched quartz defects, two of these include mechanical removal or a combination of topography mapping and FIB milling of the defect. Both of the above methods involve large capital investments specifically for etched quartz repair. The method presented in this study readily repairs etched quartz without the need to purchase additional tools for AAPSM repair. Photronics' Advanced Materials Program has developed a transparent etch stop layer (TESL) integrated into the binary blank for the purpose of building AAPSM products with a high yield component. This etch stop layer is located under a layer of sputtered SiO2 deposited to 180 for a given lithography wavelength. These blanks can be used for a variety of etched quartz applications including cPSM and CPL. Photronics has developed software that reads in defect locations from automatic inspection tools and the jobdeck. A "repair" layer is created for the defect file and the plate is then re-exposed on the mask lithography tool. The defects are then etched away using the etch stop to control the phase of the surrounding trench. The repair method was tested using programmed defect masks from single etched 193nm AAPSM technologies. Inspection, SEM, AIMS and profilometry results will be shown.

  19. Evaluation of shear bond strength of orthodontic brackets bonded with Er-YAG laser etching

    PubMed Central

    Raji, S. Hamid; Birang, Reza; Majdzade, Fateme; Ghorbanipour, Reza

    2012-01-01

    Background: Based on contradictory findings concerning the use of lasers for enamel etching, the purpose of this study was to investigate the shear bond strength of teeth prepared for bonding with Er-YAG laser etching and compare them with phosphoric acid etching. Materials and Methods: In this in vitro study forty – eight premolars, extracted for orthodontic purposes were randomly divided in to three groups. Thirty-two teeth were exposed to laser energy for 25 s: 16 teeth at 100 mj setting and 16 teeth at 150 mj setting. Sixteen teeth were etched with 37% phosphoric acid. The shear bond strength of bonded brackets with the Transbond XT adhesive system was measured with the Zwick testing machine. Descriptive statistics, Kolmogorov–Smirnov test, of homogeneity of variances, one- way analysis of variances and Tukey's test and Kruskal Wallis were used to analyze the data. Results: The mean shear bond strength of the teeth lased with 150 mj was 12.26 ± 4.76 MPa, which was not significantly different from the group with acid etching (15.26 ± 4.16 MPa). Irradiation with 100 mj resulted in mean bond strengths of 9.05 ± 3.16 MPa, which was significantly different from that of acid etching (P < 0.001). Conclusions: laser etching at 150 and 100 mj was adequate for bond strength but the failure pattern of brackets bonded with laser etching is dominantly at adhesive – enamel interface and is not safe for enamel during debonding. PMID:23087733

  20. A Wafer-Scale Etching Technique for High Aspect Ratio Implantable MEMS Structures

    PubMed Central

    Bhandari, R; Negi, S; Rieth, L.; Solzbacher, F

    2010-01-01

    Microsystem technology is well suited to batch fabricate microelectrode arrays, such as the Utah electrode array (UEA), intended for recording and stimulating neural tissue. Fabrication of the UEA is primarily based on the use of dicing and wet etching to achieve high aspect ratio (15:1) penetrating electrodes. An important step in the array fabrication is the etching of electrodes to produce needle-shape electrodes with sharp tips. Traditional etching processes are performed on a single array, and the etching conditions are not optimized. As a result, the process leads to variable geometries of electrodes within an array. Furthermore, the process is not only time consuming but also labor-intensive. This report presents a wafer-scale etching method for the UEA. The method offers several advantages, such as substantial reduction in the processing time, higher throughput and lower cost. More importantly, the method increases the geometrical uniformity from electrode to electrode within an array (1.5 0.5 % non-uniformity), and from array to array within a wafer (2 0.3 % non-uniformity). Also, the etching rate of silicon columns, produced by dicing, are studied as a function of temperature, etching time and stirring rate in a nitric acid rich HF-HNO3 solution. These parameters were found to be related to the etching rates over the ranges studied and more-importantly affect the uniformity of the etched silicon columns. An optimum etching condition was established to achieve uniform shape electrode arrays on wafer-scale. PMID:20706618

  1. One-Year Clinical Evaluation of the Bonding Effectiveness of a One-Step, Self-Etch Adhesive in Noncarious Cervical Lesion Therapy

    PubMed Central

    Faye, Babacar; Sarr, Mouhamed; Bane, Khaly; Aidara, Adjaratou Wakha; Niang, Seydina Ousmane; Kane, Abdoul Wakhabe

    2015-01-01

    This study evaluated the one-year clinical performance of a one-step, self-etch adhesive (Optibond All-in-One, Kerr, CA, USA) combined with a composite (Herculite XRV Ultra, Kerr Hawe, CA, USA) to restore NCCLs with or without prior acid etching. Restorations performed by the same practitioner were evaluated at baseline and after 3, 6, and 12 months using modified USPHS criteria. At 6 months, the recall rate was 100%. The retention rate was 84.2% for restorations with prior acid etching, but statistically significant differences were observed between baseline and 6 months. Without acid etching, the retention rate was 77%, and no statistically significant difference was noted between 3 and 6 months. Marginal integrity (93.7% with and 87.7% without acid etching) and discoloration (95.3% with and 92.9% without acid etching) were scored as Alpha or Bravo, with better results after acid etching. After one year, the recall rate was 58.06%. Loss of pulp vitality, postoperative sensitivity, or secondary caries were not observed. After one year retention rate was of 90.6% and 76.9% with and without acid conditioning. Optibond All-in-One performs at a satisfactory clinical performance level for restoration of NCCLs after 12 months especially after acid etching. PMID:25810720

  2. Etching of glass microchips with supercritical water.

    PubMed

    Karsek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, Frantiek

    2015-01-01

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent. PMID:25372151

  3. Calibrating etch model with SEM contours

    NASA Astrophysics Data System (ADS)

    Weisbuch, François; Omran, A.; Jantzen, Kenneth

    2015-03-01

    To ensure a high patterning quality, the etch effects have to be corrected within the OPC recipe in addition to the traditional lithographic effects. This requires the calibration of an accurate etch model and optimization of its implementation in the OPC flow. Using SEM contours is a promising approach to get numerous and highly reliable measurements especially for 2D structures for etch model calibration. A 28nm active layer was selected to calibrate and verify an etch model with 50 structures in total. We optimized the selection of the calibration structures as well as the model density. The implementation of the etch model to adjust the litho target layer allows a significant reduction of weak points. We also demonstrate that the etch model incorporated to the ORC recipe and run on large design can predict many hotspots.

  4. Laser-driven fusion etching process

    DOEpatents

    Ashby, Carol I. H. (Edgewood, NM); Brannon, Paul J. (Albuquerque, NM); Gerardo, James B. (Albuquerque, NM)

    1989-01-01

    The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  5. Laser-driven fusion etching process

    DOEpatents

    Ashby, C.I.H.; Brannon, P.J.; Gerardo, J.B.

    1987-08-25

    The surfaces of solids are etched by a radiation-driven chemical reaction. The process involves exposing a substrate coated with a layer of a reactant material on its surface to radiation, e.g., a laser, to induce localized melting of the substrate which results in the occurrence of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic substrates, e.g., LiNbO/sub 3/, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  6. Etching method for photoresists or polymers

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R. (inventor); Wydeven, Theodore J., Jr. (inventor)

    1991-01-01

    A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

  7. Etching radical controlled gas chopped deep reactive ion etching

    DOEpatents

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  8. Selective etching of silicon carbide films

    DOEpatents

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  9. Controlled ion implant damage profile for etching

    DOEpatents

    Arnold, Jr., George W. (Tijeras, NM); Ashby, Carol I. H. (Edgewood, NM); Brannon, Paul J. (Albuquerque, NM)

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  10. Surface damage on GaAs induced by reactive ion etching and sputter etching

    SciTech Connect

    Pang, S.W.

    1986-04-01

    GaAs surface damage induced by reactive ion etching (RIE) using various gases is compared with sputter etching using inert gases. Anisotropic etching of GaAs with minimal surface damage can be obtained with most of the RIE conditions used. Sputter etching using inert gases introduces substantial damage on the GaAs surface, and the degree of damage is inversely proportional to the ion mass. In addition, it was found that the damage induced by Ar sputter etching can be greatly reduced by the introduction of reactive gases during etching. Recovery of the diode characteristics is observed after removing 500A of the etched surface using wet chemical solution or by removing 200A of the etched surface using RIE in Cl2 at 30V.

  11. Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching.

    PubMed

    Jiang, Bing; Li, Meicheng; Liang, Yu; Bai, Yang; Song, Dandan; Li, Yingfeng; Luo, Jian

    2016-01-28

    The etching anisotropy induced by the morphology and rotation of silver particles controls the morphology of silicon nanoporous structures, through various underlying complex etching mechanisms. The level of etching anisotropy can be modulated by controlling the morphology of the silver catalyst to obtain silicon nanoporous structures with straight pores, cone-shaped pores and pyramid-shaped pores. In addition, the structures with helical pores are obtained by taking advantage of the special anisotropic etching, which is induced by the rotation and revolution of silver particles during the etching process. An investigation of the etching anisotropy during metal assisted chemical etching will promote a deep understanding of the chemical etching mechanism of silicon, and provide a feasible approach to fabricate Si nanoporous structures with special morphologies. PMID:26785718

  12. Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Jiang, Bing; Li, Meicheng; Liang, Yu; Bai, Yang; Song, Dandan; Li, Yingfeng; Luo, Jian

    2016-01-01

    The etching anisotropy induced by the morphology and rotation of silver particles controls the morphology of silicon nanoporous structures, through various underlying complex etching mechanisms. The level of etching anisotropy can be modulated by controlling the morphology of the silver catalyst to obtain silicon nanoporous structures with straight pores, cone-shaped pores and pyramid-shaped pores. In addition, the structures with helical pores are obtained by taking advantage of the special anisotropic etching, which is induced by the rotation and revolution of silver particles during the etching process. An investigation of the etching anisotropy during metal assisted chemical etching will promote a deep understanding of the chemical etching mechanism of silicon, and provide a feasible approach to fabricate Si nanoporous structures with special morphologies.

  13. Etch challenges for DSA implementation in CMOS via patterning

    NASA Astrophysics Data System (ADS)

    Pimenta Barros, P.; Barnola, S.; Gharbi, A.; Argoud, M.; Servin, I.; Tiron, R.; Chevalier, X.; Navarro, C.; Nicolet, C.; Lapeyre, C.; Monget, C.; Martinez, E.

    2014-03-01

    This paper reports on the etch challenges to overcome for the implementation of PS-b-PMMA block copolymer's Directed Self-Assembly (DSA) in CMOS via patterning level. Our process is based on a graphoepitaxy approach, employing an industrial PS-b-PMMA block copolymer (BCP) from Arkema with a cylindrical morphology. The process consists in the following steps: a) DSA of block copolymers inside guiding patterns, b) PMMA removal, c) brush layer opening and finally d) PS pattern transfer into typical MEOL or BEOL stacks. All results presented here have been performed on the DSA Leti's 300mm pilot line. The first etch challenge to overcome for BCP transfer involves in removing all PMMA selectively to PS block. In our process baseline, an acetic acid treatment is carried out to develop PMMA domains. However, this wet development has shown some limitations in terms of resists compatibility and will not be appropriated for lamellar BCPs. That is why we also investigate the possibility to remove PMMA by only dry etching. In this work the potential of a dry PMMA removal by using CO based chemistries is shown and compared to wet development. The advantages and limitations of each approach are reported. The second crucial step is the etching of brush layer (PS-r-PMMA) through a PS mask. We have optimized this step in order to preserve the PS patterns in terms of CD, holes features and film thickness. Several integrations flow with complex stacks are explored for contact shrinking by DSA. A study of CD uniformity has been addressed to evaluate the capabilities of DSA approach after graphoepitaxy and after etching.

  14. Method for dry etching of transition metals

    DOEpatents

    Ashby, Carol I. H. (Edgewood, NM); Baca, Albert G. (Albuquerque, NM); Esherick, Peter (Albuquerque, NM); Parmeter, John E. (Albuquerque, NM); Rieger, Dennis J. (Tijeras, NM); Shul, Randy J. (Albuquerque, NM)

    1998-01-01

    A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

  15. Method for dry etching of transition metals

    DOEpatents

    Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

    1998-09-29

    A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

  16. Influence of laser etching on enamel and dentin bond strength of Silorane System Adhesive.

    PubMed

    Ustunkol, Ildem; Yazici, A Ruya; Gorucu, Jale; Dayangac, Berrin

    2015-02-01

    The aim of this in vitro study was to evaluate the shear bond strength (SBS) of Silorane System Adhesive to enamel and dentin surfaces that had been etched with different procedures. Ninety freshly extracted human third molars were used for the study. After the teeth were embedded with buccal surfaces facing up, they were randomly divided into two groups. In group I, specimens were polished with a 600-grit silicon carbide (SiC) paper to obtain flat exposed enamel. In group II, the overlying enamel layer was removed and exposed dentin surfaces were polished with a 600-grit SiC paper. Then, the teeth in each group were randomly divided into three subgroups according to etching procedures: etched with erbium, chromium:yttrium-scandium-gallium-garnet laser (a), etched with 35% phosphoric acid (b), and non-etched (c, control). Silorane System Adhesive was used to bond silorane restorative to both enamel and dentin. After 24-h storage in distilled water at room temperature, a SBS test was performed using a universal testing machine at a crosshead speed of 1 mm/min. The data were analyzed using two-way ANOVA and Bonferroni tests (p?acid treatment in dentin groups (p?etched and non-etched groups in enamel and dentin (p?>?0.05). The SBS of self-etch adhesive to dentin was not statistically different from enamel (p?>?0.05). Phosphoric acid treatment seems the most promising surface treatment for increasing the enamel and dentin bond strength of Silorane System Adhesive. PMID:23912781

  17. Effect of Selective Etch on the Bond Strength of Composite to Enamel Using a Silorane Adhesive.

    PubMed

    Bermudez, L; Wajdowicz, M; Ashcraft-Olmscheid, D; Vandewalle, K

    2015-01-01

    An improvement in bond strength to enamel has been demonstrated with the use of phosphoric acid prior to bonding with self-etch methacrylate-based adhesive agents. No research has evaluated the effect of phosphoric-acid etching of enamel with a newer self-etch silorane adhesive. The purpose of this study was to evaluate the shear-bond strength of composite to enamel using the self-etch silorane adhesive compared to other self-etching methacrylate-based adhesives, with or without a separate application of phosphoric acid. Bovine incisors were sectioned using a diamond saw and mounted in plastic pipe. The bonding agents were applied to flattened enamel surfaces with or without the application of 35% phosphoric acid. The bonded tooth specimens were inserted beneath a mold, and composite was placed incrementally and light cured. The specimens were stored for 24 hours and six months in water and tested in shear. Data were analyzed with a three-way analysis of variance (ANOVA) to evaluate the effects of surface treatment, adhesive agent, or time on the bond strength of composite to bovine enamel (α=0.05). Significant differences were found between the groups based on surface treatment (p<0.01) or adhesive agent (p<0.01), but not on time (p=0.19), with no significant interactions (p>0.14). Phosphoric-acid etching of bovine enamel significantly increased the bond strength of the self-etch methacrylate and the silorane adhesives. The methacrylate-based adhesives had significantly greater bond strength to enamel than the silorane adhesive. PMID:26244264

  18. Synthesis of Ordered Mesoporous Carbon Materials by Dry Etching.

    PubMed

    Nickel, Winfried; Oschatz, Martin; Rico-Francs, Soledad; Klosz, Stefan; Biemelt, Tim; Mondin, Giovanni; Eychmller, Alexander; Silvestre-Albero, Joaqun; Kaskel, Stefan

    2015-10-12

    A novel synthesis method for ordered mesoporous carbons is presented. The inverse replication of a silica template was achieved using the carbonization of sucrose within mesoporous KIT-6. Instead of liquid acid etching, as in classical nanocasting, a novel dry chlorine etching procedure for template removal is presented for the first time. The resultant ordered mesostructured carbon material outperforms carbons obtained by conventional hard templating with respect to high specific micro- and mesopore volumes (0.6 and 1.6 cm(3) g(-1) , respectively), due to the presence of a hierarchical pore system. A high specific surface area of 1671 m(2) g(-1) was achieved, rendering this synthesis route a highly convenient method to produce ordered mesoporous carbons. PMID:26306833

  19. Surface engineering on CeO2 nanorods by chemical redox etching and their enhanced catalytic activity for CO oxidation

    NASA Astrophysics Data System (ADS)

    Gao, Wei; Zhang, Zhiyun; Li, Jing; Ma, Yuanyuan; Qu, Yongquan

    2015-07-01

    Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications.Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications. Electronic supplementary information (ESI) available: Diameter distributions of as-prepared and etched samples, optical images, specific catalytic data of CO oxidation and comparison of CO oxidation. See DOI: 10.1039/c5nr01846c

  20. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    SciTech Connect

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  1. Strongly reduced Si surface recombination by charge injection during etching in diluted HF/HNO3.

    PubMed

    Greil, Stefanie M; Schpke, Andreas; Rappich, Jrg

    2012-08-27

    Herein, we investigate the behaviour of the surface recombination of light-induced charge carriers during the etching of Si in alkaline (KOH) and acidic etching solutions of HF/HNO(3)/CH(3)COOH (HNA) or HF/HNO(3)/H(3)PO(4) (HNP) at different concentration ratios of HF and HNO(3) by means of photoluminescence (PL) measurements. The surface recombination velocity is strongly reduced during the first stages of etching in HF/HNO(3)-containing solutions pointing to a interface well passivated by the etching process, where a positive surface charge is induced by hole injection from NO-related surface species into the Si near-surface region (back surface field effect). This injected charge leads to a change in band bending by about 150 mV that repulses the light-induced charge carriers from the surface and therefore enhances the photoluminescence intensity, since non-radiative surface recombination is reduced. PMID:22761060

  2. Selective enamel etching: effect on marginal adaptation of self-etch LED-cured bond systems in aged Class I composite restorations.

    PubMed

    Souza-Junior, E J; Prieto, L T; Arajo, C T P; Paulillo, L A M S

    2012-01-01

    The aim of this study was to evaluate the influence of previous enamel etch and light emitting diode (LED) curing on gap formation of self-etch adhesive systems in Class I composite restorations after thermomechanical aging (TMA). Thus, on 192 human molars, a box-shaped Class I cavity was prepared maintaining enamel margins. Self-etch adhesives (Clearfil SE and Clearfil S3) were used to restore the preparation with a microhybrid composite. Before application of the adhesives, half of the teeth were enamel etched for 15 seconds with 37% phosphoric acid; the other half were not etched. For the photoactivation of the adhesives and composite, three light-curing units (LCUs) were used: one polywave (Ultra-Lume LED 5, UL) and two single-peak (FlashLite 1401, FL and Radii-cal, RD) LEDs. After this, epoxy resin replicas of the occlusal surface were made, and the specimens were submitted to TMA. New replicas were made from the aged specimens for marginal adaptation analysis by scanning electron microscopy. Data were submitted to Kruskal-Wallis and Wilcoxon tests (?=0.05). Before TMA, when enamel was etched before the application of S3, no gap formation was observed; however, there were gaps at the interface for the other tested conditions, with a statistical difference (p?0.05). After TMA, the selective enamel etching previous to the S3 application, regardless of the LCU, promoted higher marginal adaptation compared to the other tested groups (p?0.05). Prior to TMA, higher marginal integrity was observed, in comparison with specimens after TMA (p?0.05). With regard to Clearfil SE and Clearfil Tri-S cured with FL, no differences of gap formation were found between before and after aging (5.3 3.8 and 7.4 7.5, respectively), especially when the Clearfil Tri-S was used in the conventional protocol. When cured with RD or UL and not etched, Clearfil Tri-S presented the higher gap formation. In conclusion, additional enamel etching promoted better marginal integrity for Clearfil Tri-S, showing it to be an efficient technique for Class I composite restorations. The two-step self-etch adhesive was not influenced by selective enamel etching or by the LED-curing unit. PMID:22313271

  3. Etching with electron beam generated plasmas

    SciTech Connect

    Leonhardt, D.; Walton, S.G.; Muratore, C.; Fernsler, R.F.; Meger, R.A.

    2004-11-01

    A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen-argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride ({approx}200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride (SiO{sub x}F{sub y}) compounds. At low incident ion energies, the Ar-SF{sub 6} mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at {approx}75 eV. Etch rates were independent of the 0.5%-50% duty factors studied in this work.

  4. Aspect ratio dependent etching lag reduction in deep silicon etch processes

    SciTech Connect

    Lai, S.L.; Johnson, D.; Westerman, R.

    2006-07-15

    Microelectromechanical system (MEMS) device fabrication often involves three dimensional structures with high aspect ratios. Moreover, MEMS designs require structures with different dimensions and aspect ratios to coexist on a single microchip. There is a well-documented aspect ratio dependent etching (ARDE) effect in deep silicon etching processes. For features with different dimensions etched simultaneously, the ARDE effect causes bigger features to be etched at faster rates. In practice, ARDE effect has many undesired complications to MEMS device fabrication. This article presents a physical model to describe the time division multiplex (TDM) plasma etch processes and thereafter the experimental results on ARDE lag reduction. The model breaks individual plasma etch cycles in the TDM plasma etch processes into polymer deposition, polymer removal, and spontaneous silicon etching stages. With the insights gained from the model and control over the passivation and etch steps, it has been demonstrated that ARDE lag can be controlled effectively. Experiments have shown that a normal ARDE lag can be changed to an inverse ARDE lag. Under optimized conditions, the ARDE lag is reduced to below 2%-3% for trenches with widths ranging from 2.5 to 100 {mu}m, while maintaining good etch profile in trenches with different dimensions. Such results are achieved at etch rates exceeding 2 {mu}m/min.

  5. Graphene nanoribbons: Relevance of etching process

    SciTech Connect

    Simonet, P. Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K.

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2?}+?Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  6. Etching Behavior of Aluminum Alloy Extrusions

    NASA Astrophysics Data System (ADS)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  7. Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

    NASA Astrophysics Data System (ADS)

    Brub, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

    2009-09-01

    The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited CaxBa(1-x)Nb2O6 (CBN) and SrTiO3 thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl2 plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl2 and BaCl2 compounds being the rate-limiting step.

  8. Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

    SciTech Connect

    Berube, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

    2009-09-15

    The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited Ca{sub x}Ba{sub (1-x)}Nb{sub 2}O{sub 6} (CBN) and SrTiO{sub 3} thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl{sub 2} plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl{sub 2} and BaCl{sub 2} compounds being the rate-limiting step.

  9. Etch-a-Sketch Nanoelectronics

    NASA Astrophysics Data System (ADS)

    Levy, Jeremy

    2009-10-01

    The popular children's toy Etch-a-Sketch has motivated the invention of a new material capable of writing and erasing wires so small they approach the spacing between atoms. The interface between two normally insulating materials, strontium titanate and lanthanum aluminate, can be switched between the insulating and conducting state with the use of the sharp metallic probe of an atomic-force microscope. By ``sketching'' this probe in various patterns, one can create electronic materials with remarkably diverse properties. This material system shows promise both for ultra-high density storage and as possible replacements for silicon-based logic (CMOS). This work is supported by the National Science Foundation, Defense Advanced Research Projects Agency, Army Research Office and Air Force Office of Scientific Research.

  10. High density plasma etching of magnetic devices

    NASA Astrophysics Data System (ADS)

    Jung, Kee Bum

    Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of 6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3-rich to achieve the highest etch rates. Several different mask materials were investigated, including photoresist, thermal oxide and deposited oxide. Photoresist etches very rapidly in CO/NH 3 and use of a hard mask is necessary to achieve pattern transfer. Due to its physically dominated nature, the CO/NH3 chemistry appears suited to shallow etch depth (?0.5mum) applications, but mask erosion leads to sloped feature sidewalls for deeper features.

  11. Surface engineering on CeO? nanorods by chemical redox etching and their enhanced catalytic activity for CO oxidation.

    PubMed

    Gao, Wei; Zhang, Zhiyun; Li, Jing; Ma, Yuanyuan; Qu, Yongquan

    2015-07-21

    Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce(3+) fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications. PMID:26098593

  12. Recovering obliterated engraved marks on aluminium surfaces by etching technique.

    PubMed

    Baharum, Mohd Izhar Mohd; Kuppuswamy, R; Rahman, Azari Abd

    2008-05-20

    A study has been made of the characteristics of restoration of obliterated engraved marks on aluminium surfaces by etching technique. By etching different reagents on 0.61mm thick sheets of aluminium (99wt%) on which some engraved marks had been erased to different depths it was found that the reagent 60% hydrochloric acid and 40% sodium hydroxide on alternate swabbing on the surfaces was found to be the most sensitive one for these metal surfaces. This reagent was able to restore marks in the above plates erased down to 0.04mm below the bottom of the engraving. The marks also presented excellent contrast with the background. This reagent was further experimented with similar aluminium surfaces, but of relatively greater thickness of 1.5mm. It was noticed that the recovery depth increased slightly to 0.06mm; this suggested the dependence of recovery depth on the thickness of the sheet metal. Further, the depth of restoration decreased in cases where the original number was erased and over which a new number was engraved; the latter results are similar to those of steel surfaces reported earlier [M.A.M. Zaili, R. Kuppuswamy, H. Harun, Restoration of engraved marks on steel surfaces by etching technique, Forensic Sci. Int. 171 (2007) 27-32]. PMID:18313246

  13. Selective Etching of Wide Bandgap Nitrides

    SciTech Connect

    Shul, R.J.; Willison, C.G.; Bridges, M.M.; Han, J.; Lee, J.W.; Pearton, S.J.; Abernathy, C.R.; MacKensie, J.D.; Donovan, S.M.

    1997-12-31

    HIGH-DENSITY PLASMA ETCHING HAS BEEN AN EFFECTIVE PATTERNING TECHNIQUE FOR THE GROUP-III NITRIDES DUE TO ION FLUXES WHICH ARE 2 TO 4 ORDERS OF MAGNITUDE HIGHER THAN MORE CONVENTIONAL REACTIVE ION ETCH (RIE) SYSTEMS. GAN ETCH RATES EXCEEDING 0.68 MICROMETER/MIN HAVE BEEN REPORTED IN C12/H2/AR INDUCTIVELY COUPLED PLASMAS (ICP) AT -280 V DC-BIAS. UNDER THESE CONDITIONS, THE ETCH MECHANISM IS DOMINATED BY ION BOMBARDMENT ENERGIES WHICH CAN INDUCE DAMAGE AND MINIMIZE ETCH SELECTIVITY. HIGH SELECTIVITY ETCH PROCESSES ARE OFTEN NECESSARY FOR HETEROSTRUCTURE DEVICES WHICH ARE BECOMING MORE PROMINENT AS GROWTH TECHNIQUES IMPROVE. IN THIS STUDY, WE WILL REPORT HIGH-DENSITY ICP ETCH RATES AND SELECTIVITIES FOR GAN, ALN, AND INN AS A FUNCTION OF CATHODE POWER, ICP-SOURCE POWER, AND CHAMBER PRESSURE. GAN:ALN SELECTIVITIES {gt} 8:1 were observed in a C12/Ar plasma at 10 mTorr pressure, 500 W ICP-source power, and 130 W cathode rf-power, while the GaN:InN selectivity was optimized at approx. 6.5:1 at 5 mTorr, 500 W ICP-source power, and 130 W cathode rf-power.

  14. Etch Characteristics of GaN using Inductively Coupled Cl2 Plasma Etching

    NASA Astrophysics Data System (ADS)

    Rosli, Siti Azlina; Aziz, A. Abdul

    2008-05-01

    In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl2/Ar plasmas were investigated. It has shown that the results of a study of inductively coupled plasma (ICP) etching of gallium nitride by using Cl2/Ar is possible to meet the requirement (anisotropy, high etch rate and high selectivity), simultaneously. We have investigated the etching rate dependency on the percentage of Argon in the gas mixture, the total pressure and DC voltage. We found that using a gas mixture with 20 sccm of Ar, the optimum etch rate of GaN was achieved. The etch rate were found to increase with voltage, attaining a maximum rate 2500 /min at -557 V. The addition of an inert gas, Ar is found to barely affect the etch rate. Surface morphology of the etched samples was verified by scanning electron microscopy and atomic force microscopy. It was found that the etched surface was anisotropic and the smoothness of the etched surface is comparable to that of polished wafer.

  15. Etch Characteristics of GaN using Inductively Coupled Cl{sub 2} Plasma Etching

    SciTech Connect

    Rosli, Siti Azlina; Aziz, A. Abdul

    2008-05-20

    In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl{sub 2}/Ar plasmas were investigated. It has shown that the results of a study of inductively coupled plasma (ICP) etching of gallium nitride by using Cl{sub 2}/Ar is possible to meet the requirement (anisotropy, high etch rate and high selectivity), simultaneously. We have investigated the etching rate dependency on the percentage of Argon in the gas mixture, the total pressure and DC voltage. We found that using a gas mixture with 20 sccm of Ar, the optimum etch rate of GaN was achieved. The etch rate were found to increase with voltage, attaining a maximum rate 2500 A/min at -557 V. The addition of an inert gas, Ar is found to barely affect the etch rate. Surface morphology of the etched samples was verified by scanning electron microscopy and atomic force microscopy. It was found that the etched surface was anisotropic and the smoothness of the etched surface is comparable to that of polished wafer.

  16. Selective, deep Si trench etching with dimensional control

    SciTech Connect

    Shul, R.J.; Willison, C.G.; Zhang, L.

    1998-08-01

    The recent development of a high-aspect ratio Si etch (HARSE) process has enabled the fabrication of a variety of Si structures where deep trench etching is necessary. The HARSE process relies on the formation of a sidewall etch inhibitor to prevent lateral etching of the Si structures during exposure to an aggressive SF{sub 6}/Ar plasma etch chemistry. The process yields highly anisotropic profiles with excellent dimensional control for high aspect ratio features. In this study, Si etch rates and etch selectivities to photoresist are reported as a function of chamber pressure, cathode rf-power, ICP source power, and gas flow. Si etch rates > 3 {micro}m/min with etch selectivities to resist > 75:1 were obtained. Lateral dimensional control, etch selectivities to SiO{sub 2} and Si{sub 3}N{sub 4}, and aspect ratio dependent etching (ARDE) will also be discussed.

  17. Research on deep silicon etching for micro-channel plates

    NASA Astrophysics Data System (ADS)

    Zhou, Shun; Hu, Jiang; Zhu, Yufeng; Nie, Jing; Du, Jiaqiang

    2015-02-01

    In recent years, deep reactive ion etching (DRIE) has become a key process in the fabrication of microelectromechanical systems (MEMS). By combining the etching power of reactive ion etching and sidewall passivation, it provides a precise anisotropic etch that can be used to create very deep etches as well as very narrow structures in silicon. The standard Bosch process for DRIE alternates between two steps: etching and passivation. This combination provides the ability to etch very deep, vertical structures. In this article, silicon was etched with the Bosch process and cryogenic processes for patterning high-aspect-ratio features. The two leading techniques were compared. The influences of process parameters on the aspect ratio, etching rate and sidewall roughness of silicon were studied. Strong dependence of etch rate on loading was observed. The result showed that the etching rate rely on the process parameters. The aspect ratio of 23 was obtained and is able to be further improved.

  18. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  19. Electroless epitaxial etching for semiconductor applications

    DOEpatents

    McCarthy, Anthony M. (Menlo Park, CA)

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  20. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H. (Seattle, WA)

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  1. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  2. Dry etching method for compound semiconductors

    DOEpatents

    Shul, Randy J. (Albuquerque, NM); Constantine, Christopher (Safety Harbor, FL)

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  3. Influence of the LED curing source and selective enamel etching on dentin bond strength of self-etch adhesives in class I composite restorations.

    PubMed

    Souza-Junior, Eduardo José; Araújo, Cíntia Tereza Pimenta; Prieto, Lúcia Trazzi; Paulillo, Luís Alexandre Maffei Sartini

    2012-11-01

    The aim of this study was to evaluate the influence of the LED curing unit and selective enamel etching on dentin microtensile bond strength (μTBS) for self-etch adhesives in class I composite restorations. On 96 human molars, box-shaped class I cavities were made maintaining enamel margins. Self-etch adhesives (Clearfil SE - CSE and Clearfil S(3) - S3) were used to bond a microhybrid composite. Before adhesive application, half of the teeth were enamel acid-etched and the other half was not. Adhesives and composites were cured with the following light curing units (LCUs): one polywave (UltraLume 5 - UL) and two single-peak (FlashLite 1401 - FL and Radii Cal - RD) LEDs. The specimens were then submitted to thermomechanical aging and longitudinally sectioned to obtain bonded sticks (0.9 mm(2)) to be tested in tension at 0.5 mm/min. The failure mode was then recorded. The μTBS data were submitted to a three-way ANOVA and Tukey's (α = 0.05). For S3, the selective enamel-etching provided lower μTBS values (20.7 ± 2.7) compared to the non-etched specimens (26.7 ± 2.2). UL yielded higher μTBS values (24.1 ± 3.2) in comparison to the photoactivation approach with FL (18.8 ±3.9) and RD (19.9 ±1.8) for CSE. The two-step CSE was not influenced by the enamel etching (p ≥ 0.05). Enamel acid etching in class I composite restorations affects the dentin μTBS of the one-step self-etch adhesive Clearfil S(3), with no alterations for Clearfil SE bond strength. The polywave LED promoted better bond strength for the two-step adhesive compared to the single-peak ones. PMID:22120471

  4. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    DOEpatents

    Ashby, Carol I. H. (Edgewood, NM); Myers, David R. (Albuquerque, NM)

    1992-01-01

    The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.

  5. Metal assisted anodic etching of silicon

    NASA Astrophysics Data System (ADS)

    Lai, Chang Quan; Zheng, Wen; Choi, W. K.; Thompson, Carl V.

    2015-06-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr01916h

  6. Epoxy bond and stop etch fabrication method

    DOEpatents

    Simmons, Jerry A. (Sandia Park, NM); Weckwerth, Mark V. (Pleasanton, CA); Baca, Wes E. (Albuquerque, NM)

    2000-01-01

    A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

  7. Incorporation of stratospheric acids into water ice

    NASA Technical Reports Server (NTRS)

    Elliott, Scott; Turco, Richard P.; Toon, Owen B.; Hamill, Patrick

    1990-01-01

    Hydrochloric and hydrofluoric acids are absorbed within the water ice lattice at mole fractions maximizing below 0.00001 and 0.0001 in a variety of solid impurity studies. The absorption mechanism may be substitutional or interstitial, leading in either case to a weak permeation of stratospheric ices by the acids at equilibrium. Impurities could also inhabit grain boundaries, and the acid content of atmospheric ice crystals will then depend on details of their surface and internal microstructures. Limited evidence indicates similar properties for the absorption of HNO3. Water ice lattices saturated with acid cannot be a significant local reservoir for HCl in the polar stratosphere.

  8. Method for anisotropic etching in the manufacture of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

  9. Method for anisotropic etching in the manufacture of semiconductor devices

    DOEpatents

    Koontz, Steven L. (Seabrook, TX); Cross, Jon B. (Santa Fe, NM)

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

  10. Enhancement of RIE: etched Diffractive Optical Elements surfaces by using Ion Beam Etching

    NASA Astrophysics Data System (ADS)

    Schmitt, J.; Bischoff, Ch.; Rädel, U.; Grau, M.; Wallrabe, U.; Völklein, F.

    2015-09-01

    Shaping of laser light intensities by using Diffractive Optical Elements allows the adaption of the incident light to its application. Fused silica is used where for example UV-light or high temperatures are mandatory. For high diffraction efficiency the quality of the etched surface areas is important. The investigation of different process parameters for Ion Beam and Reactive Ion Etching reveals that only Ion Beam Etching provides surfaces with optical quality. Measurements of the influence of the surface quality on the diffraction efficiencies prove that the surfaces generated by Reactive Ion Etching are not suitable. Due to the high selectivity of the process Reactive Ion Etching is nevertheless a reasonable choice for the fabrication of Diffractive Optical Elements. To improve the quality of the etched surfaces a post processing with Ion Beam Etching is developed. Simulations in MATLAB display that the angle dependent removal of the surface during the Ion Beam Etching causes a smoothing of the surface roughness. The positive influence of a post processing on the diffraction efficiency is outlined by measurements. The ion beam post processing leads to an increase of the etching depth. For the fabrication of high efficient Diffractive Optical Elements this has to be taken into account. The relation is investigated and transferred to the fabrication of four-level gratings. Diffraction efficiencies up to 78 % instead of the ideal 81 % underline the practicability of the developed post processing.

  11. Control of the etching reaction of digital etching using tunable UV laser irradation

    NASA Astrophysics Data System (ADS)

    Meguro, T.; Ishii, M.; Sugano, T.; Gamo, K.; Aoyagi, Y.

    1994-12-01

    Control of etching reaction in digital etching of GaAs(001) using a tunable UV laser irradiation has been studied for the purpose of atomic layer etching. It is found that the As-containing products are controlled by the surface coverage of Cl 2 and the Ga-containing products are controlled by the incident wavelength. Results of the present work give us the possibility of the ideal layer-by-layer-controlled atomic layer etching as one of the promising future device technologies.

  12. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si. PMID:26059556

  13. Plasma/Neutral-Beam Etching Apparatus

    NASA Technical Reports Server (NTRS)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  14. Plasma etching: Yesterday, today, and tomorrow

    SciTech Connect

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  15. Correlating plasma emissivity and etch depth

    SciTech Connect

    Buie, M.J.; Pender, J.T.; Spindler, H.L.; Soniker, J.; Brake, M.L.; Elta, M.

    1994-12-31

    The control and monitoring of plasma properties during the dry etch process remains important in Si-based technology. The authors will discuss how plasma emissivity and etch uniformity are related by carefully controlling the plasma conditions. Spatially resolved optical imaging experiments were performed in a parallel plate reactor known as the Gaseous Electronics Conference (GEC) RF Reference Cell. With 4 inch diameter Al electrodes and a 1 inch spacing separating them, the Reference Cell was designed and constructed as a standardized etching system, the results of which are intended to be used to compare theoretical models. In this work, the authors examine the plasma uniformity simultaneously to etching single 3 inch silicon wafers with a simple test pattern in a 30 sccm CF{sub 4}/15 sccm Ar plasma for several discharge conditions. With real-time process uniformity control as the goal, by monitoring the SR-OES during the etch process, the relationship between plasma emissivity and etch uniformity can be determined.

  16. Investigation of Nitride Morphology After Self-Aligned Contact Etch

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

  17. A simplified etching technique to improve the adhesion of fiber post

    PubMed Central

    Veeramachaneni, Chandrasekhar; Morisetty, Pradeep Kumar; Rao, Saggurti Anitha; Tummala, Muralidhar

    2014-01-01

    PURPOSE Numerous methods were used to etch the fiber posts to improve its bonding to root canal dentin. Our aim was to evaluate the efficacy of 37% phosphoric acid in etching fiber posts in comparison with 24% hydrogen peroxide. MATERIALS AND METHODS Ninety human maxillary central incisors were taken and post space preparation was done. Ninety fiber posts were taken and divided into three groups (n=30) based on the surface treatment they received (H3PO4, H2O2, distilled water) and each group was further divided (n=10) based on the time period of application (15 seconds, 30 seconds, 60 seconds). All the posts were luted into canals using Rely X UniCem-2. Each tooth was then sectioned into six slices and subjected to push out test. Data obtained was subjected to statistical analysis at P<.05. The surface topography was evaluated using scanning electron microscopy. RESULTS Highest bond strength values were noted in 15 seconds etched phosphoric acid group and 60 seconds etched hydrogen peroxide group with no significant difference between two groups. Surface topography revealed complete epoxy layer removal with no damage to its structural integrity in those groups. CONCLUSION H3PO4 etching for a period of 15 seconds is an effective alternative in improving the adhesion of fiber post to root dentin. PMID:25177473

  18. Polymorph-dependent titanium dioxide nanoparticle dissolution in acidic and alkali digestions

    EPA Science Inventory

    Multiple polymorphs (anatase, brookite and rutile) of titanium dioxide nanoparticles (TiO2-NPs) with variable structures were quantified in environmental matrices via microwave-based hydrofluoric (HF) and nitric (HNO3) mixed acid digestion and muffle furnace (MF)-based potassium ...

  19. Polymerization monitoring in plasma etching systems

    NASA Astrophysics Data System (ADS)

    Kim, Jinsoo

    1999-11-01

    In plasma etching processes, the polymers used to enhance etch anisotropy and selectivity also deposit on various parts of the reaction chamber. This polymerization on reactor surface not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. This thesis explores the development of a direct in-situ polymerization monitoring sensor to minimize the drifts in plasma etching processes. In addition, polymerization dependencies on basic processing parameters and polymerization effects on etching characteristics have been explored for the first time using a direct in-situ sensor. The polymer buildup process is a strong function of parameters such as power, base pressure, and flow rate, and is also dependent on the reactor materials used, temperature, and the hydrogen/oxygen concentrations present. Experiments performed in an Applied Materials 8300 plasma etcher show a significant increase in polymerization with increased pressure and flow rates and a decrease as a function of power. These experiments provide insight into how the chamber state changes under the different processing recipes used for etching specific material layers and also suggest how the chamber seasoning process can best be carried out. The reactor surface, which serves as both a source and a sink for reactive gas species, not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. The etch rate and selectivity variations for specific silicon dioxide and silicon nitride etching recipes have been explored as a function of the polymer thickness on the reactor walls. The etch rates of nitride and polysilicon decrease dramatically with polymer thickness up to a thickness of 60nm, while the oxide etch rate remains virtually constant due to the polymerization-suppressing nature of the oxide etch. A new sensor for monitoring polymer buildup in plasma etching systems was designed, fabricated, and tested as part of this work. The device is mounted flush in the chamber wall and uses an electrothermal oscillator to measure the thermal mass change of a micromachined dielectric window as polymer deposits on it. The variation in the oscillation pulse width (cooling time) is used as the sensor output. The device operates with a typical cooling time of 2.7msec and has a thickness resolution of <1nm. The dielectric windows are 0.5mm on a side and about 1?m thick; the overall die size is 3.5mm x 7.5mm. After initial measurements using a passive sensor, CMOS (complementary metal oxide semiconductor) control circuitry was successfully designed and integrated on-chip to provide temperature compensation and a low-impedance interface with the external world. The double-poly, single-metal CMOS process was modified to add the needed micromachining steps, and photoresist masking was explored for the first time to protect the devices from silicon etchant (tetramethyl ammonium hydroxide: TMAH) attack. A chevron-based support structure is used on the back side of the wafer to hold the devices in wafer form after micromachining to allow testing, high-yield die separation, and non-lithographic post-TMAH processing. The device metallization, package, and O-ring-based placement structure have been designed to ensure compatibility with the plasma etching environment.

  20. Influence of etching with erbium, chromium:yttrium-scandium-gallium-garnet laser on microleakage of class V restoration.

    PubMed

    Marotti, Juliana; Geraldo-Martins, Vincius Rangel; Bello-Silva, Marina Stella; de Paula Eduardo, Carlos; Apel, Christian; Gutknecht, Norbert

    2010-05-01

    The aim of this in vitro study was to evaluate some parameters of dental etching when irradiated with an erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser. One-hundred sound human third molars were selected and randomly distributed into ten groups (n = 10). The class V cavities of group 1 (control) were prepared with a bur and etched with 37% phosphoric acid, while groups G2 to G10, were prepared with laser (5 W, 88.46 J/cm(2), 90/70% air/water) and etched with the following powers: G3 and G4, 0.25 W; G5 and G6, 0.5 W; G7 and G8, 0.75 W; G9 and G10, 1 W. Group G2 received no laser etching. Prior to restoration, G2, G4, G6, G8 and G10 received acid etching. After restoration, all samples were submitted to a microleakage test. According to statistical analysis (Kruskal-Wallis and Dunn's tests), G10 presented the lowest microleakage values (P<0.05). The other groups showed no differences between them. Etching with Er,Cr:YSGG laser (1 W) followed by phosphoric acid was effective in reducing the microleakage of class V restorations. PMID:19011950

  1. Ultrahigh-Aspect-Ratio Contact Hole Etching

    NASA Astrophysics Data System (ADS)

    Ikegami, Naokatsu

    1997-10-01

    An ultrasmall, 60nm-diameter, 2um-deep contact hole pattern of BPSG film was successfully fabricated using a poly-Si mask and a magnetically enhanced reactive-ion-etching system. Significantly weaker dependence of etch rate on aspect ratio(AR) was obtained up to AR=30, showing that the energetic ions (and/or neutralized molecules) with a sufficient flux for etching reaction are supplied onto the hole bottom even in such a extremely fine feature. On the other hand, neutral supply of polymer precursors onto the hole bottom (Si substrate) is not sufficient for polymerization in holes with aspect ratios greater than 10, where several energetic particles reach the hole bottoms and contribute to the etching reaction with Si substrates. For features with dimensions below 100nm, processing of vertical profiles is extremely difficult, and problems in the form of bowing at the sidewalls of the holes can occur. The shape of the etched feature and the occurrence of etch stops were shown to be in a trade-off relationship. However, vertical profiles were successfully obtained with diameters greater than 100nm without etch stops. It is possible that ion flux is significantly influenced (reduced) when ions pass through the poly-Si mask, rather than through the BPSG hole. The bowing is associated with bending of the incident ion trajectories, where the first stage of the trajectory change occurs at the mask, and subsequent multiple scattering of ions at the sidewall of the hole can occur. Other factors include sidewall protection by redeposited Si that was sputtered from the poly-Si mask and/or the deposited fluorocarbon polymers, and the effects of ion flux and energy bombarding these deposited materials. In the future, it will be necessary to clarify the details of the mechanisms of these phenomena and to establish technologies to control them. note number.

  2. Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching

    NASA Astrophysics Data System (ADS)

    Park, Sang-Duk; Min, Kyung-Suk; Yoon, Byoung-Young; Lee, Do-Haing; Yeom, Geun-Young

    2005-01-01

    In this study, the atomic layer etching (ALE) of Si was carried out using Cl2 adsorption followed by Ar+ ion beam irradiation with a low energy Ar+ ion beam generated by an inductively coupled plasma ion gun. A saturated silicon etch rate due to chlorine ALE could be obtained when the Ar+ ion acceleration voltage of the ion gun was in the range of 70 to 90 V, as a result of the preferential etching of silicon chloride formed during the chlorine adsorption period by the Ar+ ions while the silicon sputter etch rate remains insignificant. This was attributed to the differences in the silicon-to-silicon and silicon-to-silicon chloride binding energies. The saturated silicon etch rate by ALE was dependent on the chlorine flow rate, i.e. the surface coverage of chlorine and the Ar+ ion irradiation time. In this experiment, a silicon etch rate of 1.36 /cycle, which is a (100) silicon monolayer per cycle, could be obtained by flowing more than 10 sccm chlorine gas followed by bombarding the surface by Ar+ ions with an acceleration voltage of 70 V for more than 40 seconds. Under this condition, when a 30 nm scale silicon etch profile was examined after 200 cycles, a silicon etch profile with no undercut could be obtained.

  3. Reactive Ion Etching for Randomly Distributed Texturing of Multicrystalline Silicon Solar Cells

    SciTech Connect

    ZAIDI, SALEEM H

    2002-05-01

    The quality of low-cost multicrystalline silicon (mc-Si) has improved to the point that it forms approximately 50% of the worldwide photovoltaic (PV) power production. The performance of commercial mc-Si solar cells still lags behind c-Si due in part to the inability to texture it effectively and inexpensively. Surface texturing of mc-Si has been an active field of research. Several techniques including anodic etching [1], wet acidic etching [2], lithographic patterning [3], and mechanical texturing [4] have been investigated with varying degrees of success. To date, a cost-effective technique has not emerged.

  4. Fabrication of microstructures in Foturan glass using infrared femtosecond laser pulses and chemical etching

    NASA Astrophysics Data System (ADS)

    Cheng, C. W.; Chen, J. S.; Lee, P. X.; Chien, C. W.

    2010-07-01

    In this study, a method for the fabrication of microstructures on the surface and inside Foturan glass by femtosecond laser-induced modification was developed. This technique was followed by heat treatment to crystallize the modified area, and the specimen was then placed in an 8% HF acid solution for chemical etching. The fabricated microstructures were observed using scanning electron microscopy (SEM). The results demonstrated that the etching time is an important parameter in the fabrication of microstructures on Foturan glass. An example of a tapered U-shaped microchannel with a minimized neck diameter of about 5 ?m at the central point for cell detection is presented.

  5. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    SciTech Connect

    Nakazaki, Nobuya Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-14

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{sub 2} plasmas, as a function of rf bias power or ion incident energy E{sub i}, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E{sub i}: one is the roughening mode at low E{sub i}?etched surfaces increases with increasing E{sub i}, exhibiting an almost linear increase with time during etching (t?etch rate versus ?(E{sub i}) curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing E{sub i} were found to correspond to changes in the predominant ion flux from feed gas ions Cl{sub x}{sup +} to ionized etch products SiCl{sub x}{sup +} caused by the increased etch rates at increased E{sub i}, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  6. Process capability of etched multilayer EUV mask

    NASA Astrophysics Data System (ADS)

    Takai, Kosuke; Iida nee Sakurai, Noriko; Kamo, Takashi; Morikawa, Yasutaka; Hayashi, Naoya

    2015-10-01

    With shrinking pattern size at 0.33NA EUV lithography systems, mask 3D effects are expected to become stronger, such as horizontal/vertical shadowing, best focus shifts through pitch and pattern shift through focus. Etched multilayer EUV mask structures have been proposed in order to reduce mask 3D effects. It is estimated that etched multilayer type mask is also effective in reducing mask 3D effects at 0.33NA with lithographic simulation, and it is experimentally demonstrated with NXE3300 EUV Lithography system. We obtained cross-sectional TEM image of etched multilayer EUV mask pattern. It is observed that patterned multilayer width differs from pattern physical width. This means that effective reflecting width of etched multilayer pattern is smaller than pattern width measured by CD-SEM. In this work, we evaluate mask durability against both chemical and physical cleaning process to check the feasibility of etched multilayer EUV mask patterning against mask cleaning for 0.33NA EUV extension. As a result, effective width can be controlled by suitable cleaning chemicals because sidewall film works as a passivation film. And line and space pattern collapse is not detected by DUV mask pattern inspection tool after mask physical cleaning that includes both megasonic and binary spray steps with sufficient particle removal efficiency.

  7. Plasma etching a ceramic composite. [evaluating microstructure

    NASA Technical Reports Server (NTRS)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  8. Laser etching of enamel for direct bonding with an Er,Cr:YSGG hydrokinetic laser system.

    PubMed

    U?mez, Serdar; Orhan, Metin; U?mez, Aslihan

    2002-12-01

    Irradiation of enamel with laser energy changes the physical and chemical characteristics of the enamel surface, and these alterations hold promise for the conditioning of enamel for bonding procedures. This laboratory study examined the influence of laser irradiation of enamel at 2 different power settings with an erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) hydrokinetic laser system (Millennium System, Biolase Technology, Inc; San Clemente, Calif) on the shear bond strength of orthodontic appliances and compared these with that of acid-etching. The prepared surfaces of 40 noncarious, intact, extracted premolars were exposed to laser energy: 20 teeth at 2-W setting (5.6 J/cm(2)) and 20 teeth at 1-W setting (2.7 J/cm(2)) of the commercial laser unit. Twenty teeth were etched with 37% orthophosphoric acid. Brackets were bonded with an orthodontic no-mix adhesive, and shear bond strength was determined with a universal testing machine. Data were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Etched and restored surfaces of an acid-etched tooth and a 2-W laser-irradiated tooth were examined with scanning electron microscopy (SEM). Laser treatment under 2 W resulted in bond strengths of 7.11 +/- 4.56 megapascals (MPa), which was not significantly different from that of acid etching (8.23 +/- 2.30 MPa). Laser irradiation at 1 W resulted in bond strengths of 5.64 +/- 3.19 MPa, which was significantly different from that of acid etching (P <.05). However, large SD and coefficient of variation values of both laser groups made reliability of this method as an enamel conditioner questionable. Scanning electron microscopy studies of the restored irradiated surfaces showed good surface characteristics, whereas the lased surface was still more irregular than the restored acid-etched sample. Although laser devices are effectively used in some other areas of dentistry, enamel conditioning with an Er,Cr:YSGG laser cannot be considered a successful alternative to the conventional methods of increasing bond strengths to enamel. PMID:12490877

  9. Etching of InP by H3PO4, H2O2 Solutions

    NASA Astrophysics Data System (ADS)

    Mouton, A.; Sundararaman, C. S.; Lafontaine, H.; Poulin, S.; Currie, J. F.

    1990-10-01

    This paper deals with the chemical etching of (100) InP using a phosphoric acid and hydrogen peroxide mixture. It is shown that the etching rate is strongly dependent on the relative concentration of the two species; it is maximal for an equivolumic solution, and depending on the dilution it ranges from 70 to 20 /min. The activation energy of a non-diluted solution is approximately 14 kcal/mol. The post-etch surface state of the sample analysed by SEM and XPS, shows a very smooth surface for all concentrations, and the formation of a InPO4\\cdotxH2O layer. This solution can be used as a very precise etchant in devices processes.

  10. Etched porcelain veneer restoration of a primary tooth: a clinical report.

    PubMed

    Aristidis, G A

    2000-05-01

    The treatment of a retained primary tooth in the adult dentition has always been a difficult clinical problem. In the anterior region of the mouth, the problem is further complicated by esthetic requirements. In this clinical report, a primary canine was recontoured both incisally and interproximally with an etched porcelain veneer to provide an esthetic result. The use of etched porcelain as an indirect veneer material, which has demonstrated clinical success, is an alternative to the requirements of conservative dentistry, namely, preservation of tooth substance and safeguarding primary tooth vitality. The procedure used in this clinical report differs from traditional procedures. The preparation was extended to the lingual surface of the tooth, which allowed for an increase of the incisal length and added a sufficient amount of porcelain. The etching procedure was performed twice by applying 30% phosphoric acid etchant gel to the prepared tooth. PMID:10793378

  11. Investigation of Cr etch chamber seasoning

    NASA Astrophysics Data System (ADS)

    Nesladek, Pavel; Ruhl, Guenther G.; Kristlib, Marcel

    2004-06-01

    One of the most critical steps for photomask CD off-target is the patterning of the mask. Here the instability of the dry etch process contributes directly to the stability of the CD value. The increasing demands on high-end masks cause a narrowing of both mask CD off-target and CD uniformity specifications, and accordingly the process stability has to be improved to fulfill these criteria. In this work we investigated the correlation between hardware parameters, basic etch process parameters and the corresponding CD mean-to-target value. Correlations between CD mean-to-target and Cr etch rate as well as effects of chamber seasoning after wet cleans are discussed.

  12. ICP Etching of SiC

    SciTech Connect

    Grow, J.M.; Lambers, E.S.; Ostling, M.; Pearton, S.J.; Ren, F.; Shul, R.J.; Wang, J.J.; Zetterling, C.-M.

    1999-02-04

    A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred.

  13. Pattern transfer with stabilized nanoparticle etch masks.

    PubMed

    Hogg, Charles R; Picard, Yoosuf N; Narasimhan, Amrit; Bain, James A; Majetich, Sara A

    2013-03-01

    Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiO(x) substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm. Deposition and liftoff can transform the dot array mask into an antidot mask, where the gap is determined by the nanoparticle core diameter. Reactive ion etching is used to transfer the dot and antidot patterns into the substrate. The effect of the gap size on the etching rate is modeled and compared with the experimental results. PMID:23376924

  14. Purified water etching of native oxides on heteroepitaxial CdTe thin films

    NASA Astrophysics Data System (ADS)

    Meinander, Kristoffer; Carvalho, Jessica L.; Miki, Carley; Rideout, Joshua; Jovanovic, Stephen M.; Devenyi, Gabriel A.; Preston, John S.

    2014-12-01

    The etching of native oxides on compound semiconductors is an important step in the production of electronic and optoelectronic devices. Although it is known that the native oxide on CdTe can be etched through a rinsing in purified water, a deeper investigation into this process has not been done. Here we present results on both surface morphology changes and reaction rates for purified water etching of the native oxide on heteroepitaxial CdTe thin films, as studied by atomic force microscopy and x-ray photoelectron spectroscopy. Together with a characterization of both the structure and stoichiometry of the initial native oxide, we show how an altering of the pH-level of the etchant will affect the etching rates. If oxide regrowth was allowed, constant etching rates could be observed for all etchants, while a logarithmic decrease in oxide thickness was observed if regrowth was inhibited. Both acidic and basic etchants proved to be more efficient than neutral water.

  15. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    PubMed Central

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  16. Effect of sealant viscosity on the penetration of resin into etched human enamel.

    PubMed

    Irinoda, Y; Matsumura, Y; Kito, H; Nakano, T; Toyama, T; Nakagaki, H; Tsuchiya, T

    2000-01-01

    This study was designed to investigate the relationship between the etched depth, penetration of sealants and marginal seal. Sixty unerupted lower first premolars extracted from patients for orthodontic reasons were thoroughly cleaned and stored in an antiseptic Ringer's solution at 4 degrees C. A "window" on the occlusal of 15 of the premolars, including both mesial and distal pits, was developed by painting nail varnish around the border of the occlusal surfaces. Etching was then done with 35% phosphoric acid for 60 seconds to all 60 premolars. Five of the "window" teeth were evaluated by microradiography to determine the etched depth of the superficial and subsurface enamel. Five were prepared for SEM analysis to observe the change of the superficial etched enamel surface. Another five "window" teeth were embedded in epoxy resin and sectioned parallel to the long axis of the tooth through the fissures in order to observe the subsurface depth of the etch by SEM analysis. The other 45 teeth were divided into three groups of 15 teeth each. Fissures of each group of teeth were sealed using Prisma-Shield (LD Caulk), Concise White Sealant (3M Dental Products) or Teethmate A (Kuraray) sealants and stored in water (37 degrees C) for 24 hours. They were then sectioned and demineralized before being examined by a scanning electron microscope. Photographs of secondary electron image (SEI) were done to gradate the resin-infiltrated enamel and resin tags for these sealants. After SEM observation, the 15 samples of each applied sealant were polished to a high gloss again and placed in a silver nitrate solution for 24 hours before being examined under the SEM equipped with a back-scatter electron detector. Data were then analyzed using the Welch and Student t-tests. Results showed that fissured enamel of unerupted human lower first premolars became porous after etching with 35% phosphoric acid. The low viscosity sealant Teethmate A (approximately 260 mPa.s), penetrated fully and formed a resin-infiltrated layer in enamel beyond the etched depth. However, the high viscosity sealants (Prisma-Shield and Concise White Sealant) did not penetrate enough to ensure that the acid-etched enamel was infiltrated sufficiently by the sealant to insure good marginal seals. PMID:11203831

  17. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  18. Etching Silicon Films With Xenon Difluoride

    NASA Technical Reports Server (NTRS)

    Hecht, M. H.

    1986-01-01

    Microscopic circuit structures prepared for probing. Xenon difluoride removes relatively large amounts of silicon from integratedcircuit or solar-cell structures while leaving SiO2, Si3N4, Al2O3, and other compounds intact. In Etching Apparatus, solid XeF2 sublimated in vacuum, then allowed to flow over sample at controlled rate and pressure. Wafer etched from back to expose SiO2 and Al layers for spectroscopic analysis of SiO2/Al interface. Using XeF2 technique, silicon wafer with oxide layer reduced in thickness from standard 300 micrometer to as little as 10 nanometer without adversely affecting oxide.

  19. Electron beam induced etching of carbon

    NASA Astrophysics Data System (ADS)

    Martin, Aiden A.; McCredie, Geoffrey; Toth, Milos

    2015-07-01

    Nanopatterning of graphene and diamond by low energy ( ? 30 keV) electrons has previously been attributed to mechanisms that include atomic displacements caused by knock-on, electron beam heating, sputtering by ionized gas molecules, and chemical etching driven by a number of gases that include N2. Here, we show that a number of these mechanisms are insignificant, and the nanopatterning process can instead be explained by etching caused by electron induced dissociation of residual H2O molecules. Our results have significant practical implications for gas-mediated electron beam nanopatterning techniques and help elucidate the underlying mechanisms.

  20. Scanning electron microscope study of the effects of soft drinks on etched and sealed enamel.

    PubMed

    Diner, Banu; Hazar, Serpil; Sen, Bilge Hakan

    2002-08-01

    The purpose of this study was to determine the effects of cola and other acidic drinks on etched tooth enamel in a simulated oral environment. The test beverages were cola, orange soda, lemon soda, and sparkling mineral water. Sixty extracted premolars were divided into an experimental group (n = 40) and a control group (n = 20). Half of the buccal surface of each tooth in the experimental group was coated with wax. The teeth were etched for 60 seconds with 37% phosphoric acid, and half of the teeth were also bonded. The experimental group was further divided into 4 subgroups of 5 teeth each, and each subgroup was exposed to 1 of the test beverages in a thermocycling apparatus. The apparatus was designed to keep the teeth in artificial saliva for 2 hours and in the soft drink at room temperature for 15 minutes. This procedure was performed 3 times a day for 5 days. The control group was also divided into 4 subgroups of 5 teeth each. Half of the buccal surface of each tooth in 2 subgroups was coated with wax, and the teeth in the other 2 were left uncoated. One waxed and 1 unwaxed subgroup were then etched, and the other waxed and unwaxed subgroups were etched and bonded. The waxed subgroups were stored in artificial saliva for 5 days, and the unwaxed subgroups were examined without further exposure to liquids. Surfaces exposed to acidic soft drinks were compared with control surfaces under a scanning electron microscope. Defect zone borders were observed between the exposed areas and the wax-coated areas of teeth in the experimental groups, especially the subgroups exposed to cola, orange soda, and lime soda. Fewer defect zones were observed on teeth exposed to sparkling mineral water. The results indicate that acidic soft drinks cause enamel demineralization on etched tooth surfaces. PMID:12165767

  1. Influence of voltage on etching rate of hydrogenated amorphous carbon films with HNO3 studied using surface plasmon resonance

    NASA Astrophysics Data System (ADS)

    Tunmee, Sarayut; Nakaya, Yasuyuki; Zhou, XiaoLong; Arakawa, Satoru; Komatsu, Keiji; Ito, Haruhiko; Saitoh, Hidetoshi

    2016-02-01

    Etching of hydrogenated amorphous carbon (a-C:H) films in 0.1 M nitric acid was evaluated using surface plasmon resonance at the applied voltages of 0.0, ‑1.0, and 1.0 V. The etching rates of the a-C:H films as functions of the applied voltages and etching duration were obtained to be 0.0368 (at 0.0 V), 0.0117 (at ‑1.0 V), and 0.0074 nm/min (at 1.0 V). These results clearly indicate that the etching rates decrease significantly under the conditions of applying positive or negative voltage, demonstrating the enhanced corrosion resistance of the a-C:H films upon applying voltage.

  2. Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon

    NASA Astrophysics Data System (ADS)

    Lianto, Prayudi; Yu, Sihang; Wu, Jiaxin; Thompson, C. V.; Choi, W. K.

    2012-11-01

    Metal assisted chemical etching with interconnected catalyst structures has been used to create a wide array of organized nanostructures. However, when patterned catalysts are not interconnected, but are isolated instead, vertical etching to form controlled features is difficult. A systematic study of the mechanism and catalyst stability of metal assisted chemical etching (MACE) of Si in HF and H2O2 using Au catalysts has been carried out. The effects of the etchants on the stability of Au catalysts were examined in detail. The role of excess electronic holes as a result of MACE was investigated via pit formation as a function of catalyst proximity and H2O2 concentration. We show that a suppression of excess holes can be achieved by either adding NaCl to or increasing the HF concentration of the etching solution. We demonstrate that an electric field can direct most of the excess holes to the back of the Si wafer and thus reduce pit formation at the surface of Si between the Au catalysts. The effect of hydrogen bubbles, generated as a consequence of MACE, on the stability of Au catalysts has also been investigated. We define a regime of etch chemistry and catalyst spacing for which catalyst stability and vertical etching can be achieved.Metal assisted chemical etching with interconnected catalyst structures has been used to create a wide array of organized nanostructures. However, when patterned catalysts are not interconnected, but are isolated instead, vertical etching to form controlled features is difficult. A systematic study of the mechanism and catalyst stability of metal assisted chemical etching (MACE) of Si in HF and H2O2 using Au catalysts has been carried out. The effects of the etchants on the stability of Au catalysts were examined in detail. The role of excess electronic holes as a result of MACE was investigated via pit formation as a function of catalyst proximity and H2O2 concentration. We show that a suppression of excess holes can be achieved by either adding NaCl to or increasing the HF concentration of the etching solution. We demonstrate that an electric field can direct most of the excess holes to the back of the Si wafer and thus reduce pit formation at the surface of Si between the Au catalysts. The effect of hydrogen bubbles, generated as a consequence of MACE, on the stability of Au catalysts has also been investigated. We define a regime of etch chemistry and catalyst spacing for which catalyst stability and vertical etching can be achieved. Electronic supplementary information (ESI) available. See DOI: 10.1039/c2nr32350h

  3. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    SciTech Connect

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  4. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    NASA Astrophysics Data System (ADS)

    Stráský, Josef; Havlíková, Jana; Bačáková, Lucie; Harcuba, Petr; Mhaede, Mansour; Janeček, Miloš

    2013-09-01

    Presented work aims at multi-method characterization of combined surface treatment of Ti-6Al-4V alloy for biomedical use. Surface treatment consists of consequent use of electric discharge machining (EDM), acid etching and shot peening. Surface layers are analyzed employing scanning electron microscopy and energy dispersive X-ray spectroscopy. Acid etching by strong Kroll's reagent is capable of removing surface layer of transformed material created by EDM. Acid etching also creates partly nanostructured surface and significantly contributes to the enhanced proliferation of the bone cells. The cell growth could be positively affected by the superimposed bone-inspired structure of the surface with the morphological features in macro-, micro- and nano-range. Shot peening significantly improves poor fatigue performance after EDM. Final fatigue performance is comparable to benchmark electropolished material without any adverse surface effect. The proposed three-step surface treatment is a low-cost process capable of producing material that is applicable in orthopedics.

  5. Plasma etching of the Group-III nitrides

    SciTech Connect

    Shul, R.; Pearton, S.J.; Abernathy, C.R.

    1996-01-01

    In reactive ion etching (RIE) of GaN, the ion bombardment can damage the material, so it is necessary to develop plasma etch processes. This paper reports etching of GaN in an ECR (electron cyclotron resonance) etch system using both the ECR/RIE mode and the RIE-only mode. Group III (Ga, In, Al) nitride ECR etching is reviewed as a function of plasma chemistry, power, temperature, and pressure; as the ECR microwave power increased, the ion density and etch rates increased, with the etch rate increasing the most for InN. GaN etch rates > 6500 {angstrom}/min have been observed in the ECR/RIE mode. 2 figs, 6 refs.

  6. Wettability investigating on the wet etching textured multicrystalline silicon wafer

    NASA Astrophysics Data System (ADS)

    Liu, Xiangju; Niu, Yuchao; Zhai, Tongguang; Ma, Yuying; Zhen, Yongtai; Ma, Xiaoyu; Gao, Ying

    2016-02-01

    In order to investigate the wettability properties of multicrystalline silicon (mc-Si), the different surface structures were fabricated on the as-cut p-type multi-wire slurry sawn mc-Si wafers, such as as-cut, polished and etched in various acid solutions. The contact angles and the XRD spectra of these samples were measured. It was noted that both the surface structures and the use of surfactant, such as Tween 80, made a stronger effect on wettability of the Si wafer. Due to the lipophilic groups of Tween 80 combined with the Si atoms while the hydrophilic groups of it were outward, a lipophilic surface of Si changed into a hydrophilic one and the rougher the surface, the stronger the hydrophily. Thus, it is feasible to add an appropriate surfactant into the etching solution during black-Si wafer fabrication for solar cells. In addition, different crystal plains of Si had different dangling bond density, so that their surface energies were different. A surface with higher surface energy could attract more water atoms and its wettability was better. However, the effect of crystal plain on the surface wettability was much weaker than surface morphology.

  7. Etch Profile Simulation Using Level Set Methods

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

  8. Optimization of TMAH etching for MEMS

    NASA Astrophysics Data System (ADS)

    Brida, Sebastiano; Ferrario, Lorenza; Guarnieri, Vittorio; Giacomozzi, Flavio; Margesin, Benno; Paranjape, Makarand; Verzellesi, Giovanni; Zen, Mario

    1999-03-01

    Tetra-methyl ammonium hydroxide (TMAH) is an anisotropic silicon etchant that is gaining considerable use in silicon sensor micromachining due to its excellent compatibility with CMOS processing, selectivity, anisotropy and relatively low toxicity, as compared to the more used KOH and EDP etchants. In this paper, the influence of temperature and concentration of the TMAH solution together with oxidizer additions is studied in order to optimize the anisotropic silicon etching for MEMS fabrication. In particular this optimized etchant formulation has been employed at ITC-Irst in the development of a basic fabrication process for piezoresistive pressure sensors based on a silicon membrane and four resistors connected in a Weatherstone bridge configuration. The active element of the sensor, i.e. the thin silicon membrane, is formed by etching anisotropically from the backside of the wafer. Both process and etching have to be tuned and matched in order to obtain an optimum fabrication sequence. Some improvements such as higher etch rate and better surface finish have been obtained by the addition of ammonium peroxidsulfate as oxidizing agent under different conditions. This simplifies both the post processing and the tech set-up. The process parameters and the thermo-electro-mechanical characteristics of the pressure sensors were tested and are compared with the analytical and numerical simulations.

  9. Dry etching of III-V nitrides

    SciTech Connect

    Pearton, S.J.; Shul, R.J.; McLane, G.F.; Constantine, C.

    1995-12-01

    The chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3{times}l0{sup 9}cm{sup {minus}3}) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 10{sup 9}cm{sup {minus}3} range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar, Cl{sub 2}/H{sub 2}, Cl{sub 2}/SF{sub 6}, HBr/H{sub 2} and HI/H{sub 2} plasma chemistries achieving etch rates up to {approximately}4,000{angstrom}/min at moderate dc bias voltages ({le}-150V). Ion-induced damage in the nitrides appears to be less apparent than in other III-V`s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.

  10. Macroscale Transformation Optics Enabled by Photoelectrochemical Etching.

    PubMed

    Barth, David S; Gladden, Christopher; Salandrino, Alessandro; O'Brien, Kevin; Ye, Ziliang; Mrejen, Michael; Wang, Yuan; Zhang, Xiang

    2015-10-28

    Photoelectrochemical etching of silicon can be used to form lateral refractive index gradients for transformation optical devices. This technique allows the fabrication of macroscale devices with large refractive index gradients. Patterned porous layers can also be lifted from the substrate and transferred to other materials, creating more possibilities for novel devices. PMID:26332896

  11. Technique for etching monolayer and multilayer materials

    SciTech Connect

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  12. Wet KOH etching of freestanding AlN single crystals

    NASA Astrophysics Data System (ADS)

    Bickermann, M.; Schmidt, S.; Epelbaum, B. M.; Heimann, P.; Nagata, S.; Winnacker, A.

    2007-03-01

    We investigated defect-selective wet chemical etching of freestanding aluminum nitride (AlN) single crystals and polished cuts in a molten NaOH-KOH eutectic at temperatures ranging from 240 to 400 C. Due to the strong anisotropy of the AlN wurtzite structure, different AlN faces get etched at very different etching rates. On as-grown rhombohedral and prismatic facets, defect-related etching features could not be traced, as etching these facets was found to mainly emphasize features present already on the un-etched surface. On nitrogen polar basal planes, hexagonal pyramids/hillocks exceeding 100 ?m in diameter may form within seconds of etching at 240 C. They sometimes are arranged in lines and clusters, thus we attribute them to defects on the surface, presumably originating in the bulk material. On aluminum polar basal planes, the etch pit density which saturates after approx. 2-3 min of total etching time at 350 C equals the density of a certain type of dislocations (presumably screw dislocations) threading the surface. Smaller etch pits form around annealed indentations, in the vicinity of some bigger etch pits after repeated etching, and sometimes also isolated on the surface area. Although alternate explanations exist, we attribute these etch pits to threading mixed and edge dislocations. This paper features etching parameters optimized for different planes and models on the formation of etching features especially on the polar faces. Finally, the issue of reliability and reproducibility of defect detection and evaluation by wet chemical etching is addressed.

  13. High index contrast polysiloxane waveguides fabricated by dry etching

    SciTech Connect

    Madden, S. J.; Zhang, M. Y.; Choi, D.-Y.; Luther-Davies, B.; Charters, R.

    2009-05-15

    The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG trade mark sign polysiloxane thin films. The use of a silica mask and CHF{sub 3}/O{sub 2} etch gas led to large etch selectivity between the silica and IPG trade mark sign of >20 and etch rates of >100 nm/min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

  14. Orientation Dependence of Etch Pit Density in (111) and (211) CdZnTe Everson Etch

    NASA Astrophysics Data System (ADS)

    Burgess, Lindsay; Kumar, Francis Joseph; Mackenzie, Jason

    2015-10-01

    Everson solution is widely used for dislocation etching on (111)B and (211)B facets of CdTe and CdZnTe (CZT) wafers, but (211)B etch pit density (EPD) counts are lower. In this study, the correlation between the (111) and (211) Everson EPD counts was quantified by etching incrementally misoriented (111)B and (211)B facets of CdZnTe with counting by semi-automated optical microscopy. The EPD was found to decrease exponentially with increasing misorientation angle from (111)B. The results indicate that, for EPD to be a quantitative indicator of crystalline quality, precise crystal orientation angles must be taken into account. Based on the exponential curve fit, an estimation of the (111)B EPD values can be extrapolated from the EPD measured for (211)B etching.

  15. CR-39 track etching and blow-up method

    DOEpatents

    Hankins, Dale E. (Livermore, CA)

    1987-01-01

    This invention is a method of etching tracks in CR-39 foil to obtain uniformly sized tracks. The invention comprises a step of electrochemically etching the foil at a low frequency and a "blow-up" step of electrochemically etching the foil at a high frequency.

  16. Comparison of plasma etch techniques for III V nitrides

    NASA Astrophysics Data System (ADS)

    Shul, R. J.; Vawter, G. A.; Willison, C. G.; Bridges, M. M.; Lee, J. W.; Pearton, S. J.; Abernathy, C. R.

    1998-12-01

    Fabrication of group-III nitride devices relies on the ability to pattern features to depths ranging from ˜1000 Å to >5 μm with anisotropic profiles, smooth morphologies, selective etching of one material over another and a low degree of plasma-induced damage. In this study, GaN etch rates and etch profiles are compared using reactive ion etch (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) etch systems. RIE yielded the slowest etch rates and sloped etch profiles despite dc-biases >-900 V. ECR and ICP etching yielded the highest rates with anisotropic profiles due to their high plasma flux and the ability to control ion energies independently of plasma density. RIBE etch results also showed anisotropic profiles but with slower etch rates than either ECR or ICP possibly due to lower ion flux. InN and AlN etch characteristics are also compared using ICP and RIBE.

  17. Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon.

    PubMed

    Lianto, Prayudi; Yu, Sihang; Wu, Jiaxin; Thompson, C V; Choi, W K

    2012-12-01

    Metal assisted chemical etching with interconnected catalyst structures has been used to create a wide array of organized nanostructures. However, when patterned catalysts are not interconnected, but are isolated instead, vertical etching to form controlled features is difficult. A systematic study of the mechanism and catalyst stability of metal assisted chemical etching (MACE) of Si in HF and H(2)O(2) using Au catalysts has been carried out. The effects of the etchants on the stability of Au catalysts were examined in detail. The role of excess electronic holes as a result of MACE was investigated via pit formation as a function of catalyst proximity and H(2)O(2) concentration. We show that a suppression of excess holes can be achieved by either adding NaCl to or increasing the HF concentration of the etching solution. We demonstrate that an electric field can direct most of the excess holes to the back of the Si wafer and thus reduce pit formation at the surface of Si between the Au catalysts. The effect of hydrogen bubbles, generated as a consequence of MACE, on the stability of Au catalysts has also been investigated. We define a regime of etch chemistry and catalyst spacing for which catalyst stability and vertical etching can be achieved. PMID:23099475

  18. Etched profile control in anisotropic etching of silicon by TMAH+Triton

    NASA Astrophysics Data System (ADS)

    Pal, Prem; Gosálvez, M. A.; Sato, K.

    2012-06-01

    The adverse effect of mechanical agitation (magnetic bead stirring) as well as galvanic interaction between the evolving facets of the etch front on the amount of undercutting during anisotropic etching of Si{1 0 0} wafers in surfactant-added tetramethylammonium hydroxide (TMAH) is studied by etching different mask patterns in magnetically stirred and nonstirred solutions. Triton X-100, with formula C14H22O(C2H4O)n, where n = 9-10, is used as the surfactant. The stirring results conclude that the adsorption of the surfactant on the etched silicon surfaces is predominantly physical in nature rather than chemical (physisorption versus chemisorption). The proposed model to account for the galvanic interaction between the evolving facets indicates that the underlying chemical etching process can be significantly surpassed by the onset of an electrochemical etching contribution when the relative area of the exposed {1 0 0} surface becomes relatively small in comparison to that of the developed {1 1 1} sidewalls. This study is useful for engineering applications where surfactant-added TMAH is used for the fabrication of silicon MEMS structures that should contain negligible undercutting.

  19. Modeling Wet Chemical Etching of Surface Flaws on Fused Silica

    SciTech Connect

    Feit, M D; Suratwala, T I; Wong, L L; Steele, W A; Miller, P E; Bude, J D

    2009-10-28

    Fluoride-based wet chemical etching of fused silica optical components is useful to open up surface fractures for diagnostic purposes, to create surface topology, and as a possible mitigation technique to remove damaged material. To optimize the usefulness of etching , it is important to understand how the morphology of etched features changes as a function of the amount of material removed. In this study, we present two geometric etch models that describe the surface topology evolution as a function of the amount etched. The first model, referred to as the finite-difference etch model, represents the surface as an array of points in space where at each time-step the points move normal to the local surface. The second model, referred to as the surface area-volume model, more globally describes the surface evolution relating the volume of material removed to the exposed surface area. These etch models predict growth and coalescence of surface fractures such as those observed on scratches and ground surfaces. For typical surface fractures, simulations show that the transverse growth of the cracks at long etch times scales with the square root of etch time or the net material removed in agreement with experiment. The finite-difference etch model has also been applied to more complex structures such as the etching of a CO{sub 2} laser-mitigated laser damage site. The results indicate that etching has little effect on the initial morphology of this site implying little change in downstream scatter and modulation characteristics upon exposure to subsequent high fluence laser light. In the second part of the study, the geometric etch model is expanded to include fluid dynamics and mass transport. This later model serves as a foundation for understanding related processes such as the possibility of redeposition of etch reaction products during the etching, rinsing or drying processes.

  20. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    SciTech Connect

    Garner, C.

    1987-01-01

    A chemically assisted ion beam etching (CAIBE) technique is described which employs an ion beam from an electron bombardment ion source and a directed flux of ClF/sub 3/ neutrals. This technique enables the etching of tungsten foils and films in excess of 40 ..mu.. thick with good anisotropy and pattern definition over areas 30 mm/sup 2/, and with a high degree of selectivity. (100)tungsten foils etched with this process exhibit preferred orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling wave tubes to a controlled porosity.

  1. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  2. Visible-laser photochemical etching of Cr, Mo, and W

    SciTech Connect

    Rothschild, M.; Sedlacek, J.H.C.; Black, J.G.; Ehrlich, D.J.

    1987-01-01

    Direct halogen etching of metal films by laser-induced photochemical and thermal processes at submicrometer resolution is described. The regimes in which each of the processes is prevalent are readily observed. In addition to direct definition of metal patterns, the etched metal films serve as durable resist layers for conventional etching processes. Cl/sub 2/ is photochemically dissociated at low laser power density levels, enabling direct-write etching of Cr, Mo, and W films on fragile substrates. NF/sub 3/-assisted etching is dominated by thermal reactions.

  3. ICP etching of GaAs via hole contacts

    SciTech Connect

    Shul, R.J.; Baca, A.G.; Briggs, R.D.; McClellan, G.B.; Pearton, S.J.; Constantine, C.

    1996-09-01

    Deep etching of GaAs is a critical process step required for many device applications including fabrication of through-substrate via holes for monolithic microwave integrated circuits (MMICs). Use of high-density plasmas, including inductively coupled plasmas (ICP), offers an alternative approach to etching vias as compared to more conventional parallel plate reactive ion etch systems. This paper reports ICP etching of GaAs vias at etch rates of about 5.3 {mu}m/min with via profiles ranging from highly anistropic to conical.

  4. Effect of a functional monomer (MDP) on the enamel bond durability of single-step self-etch adhesives.

    PubMed

    Tsuchiya, Kenji; Takamizawa, Toshiki; Barkmeier, Wayne W; Tsubota, Keishi; Tsujimoto, Akimasa; Berry, Thomas P; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-02-01

    The present study aimed to determine the effect of the functional monomer, 10-methacryloxydecyl dihydrogen phosphate (MDP), on the enamel bond durability of single-step self-etch adhesives through integrating fatigue testing and long-term water storage. An MDP-containing self-etch adhesive, Clearfil Bond SE ONE (SE), and an experimental adhesive, MDP-free (MF), which comprised the same ingredients as SE apart from MDP, were used. Shear bond strength (SBS) and shear fatigue strength (SFS) were measured with or without phosphoric acid pre-etching. The specimens were stored in distilled water for 24 h, 6 months, or 1 yr. Although similar SBS and SFS values were obtained for SE with pre-etching and for MF after 24 h of storage in distilled water, SE with pre-etching showed higher SBS and SFS values than MF after storage in water for 6 months or 1 yr. Regardless of the pre-etching procedure, SE showed higher SBS and SFS values after 6 months of storage in distilled water than after 24 h or 1 yr. To conclude, MDP might play an important role in enhancing not only bond strength but also bond durability with respect to repeated subcritical loading after long-term water storage. PMID:26620762

  5. Structure dependent hydrogen induced etching features of graphene crystals

    NASA Astrophysics Data System (ADS)

    Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap; Papon, Remi; Sharma, Subash; Vishwakarma, Riteshkumar; Sharma, Kamal P.; Tanemura, Masaki

    2015-06-01

    H2 induced etching of graphene is of significant interest to understand graphene growth process as well as to fabricate nanoribbons and various other structures. Here, we demonstrate the structure dependent H2 induced etching behavior of graphene crystals. We synthesized graphene crystals on electro-polished Cu foil by an atmospheric pressure chemical vapor deposition process, where some of the crystals showed hexagonal shaped snowflake-dendritic morphology. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystals by annealing in a gas mixture of H2 and Ar. The regular graphene crystals were etched anisotropically creating hexagonal holes with pronounced edges, while etching of all the dendritic crystals occurred from the branches of lobs creating symmetrical fractal structures. The etching behavior provides important clue of graphene nucleation and growth as well as their selective etching to fabricate well-defined structures for nanoelectronics.

  6. Si etching with reactive neutral beams of very low energy

    NASA Astrophysics Data System (ADS)

    Hara, Yasuhiro; Hamagaki, Manabu; Mise, Takaya; Iwata, Naotaka; Hara, Tamio

    2014-12-01

    A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF4 and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si-Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

  7. Si etching with reactive neutral beams of very low energy

    SciTech Connect

    Hara, Yasuhiro; Hamagaki, Manabu; Mise, Takaya; Iwata, Naotaka; Hara, Tamio

    2014-12-14

    A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

  8. Comparison of Buffer Effect of Different Acids During Sandstone Acidizing

    NASA Astrophysics Data System (ADS)

    Umer Shafiq, Mian; Khaled Ben Mahmud, Hisham; Hamid, Mohamed Ali

    2015-04-01

    The most important concern of sandstone matrix acidizing is to increase the formation permeability by removing the silica particles. To accomplish this, the mud acid (HF: HCl) has been utilized successfully for many years to stimulate the sandstone formations, but still it has many complexities. This paper presents the results of laboratory investigations of different acid combinations (HF: HCl, HF: H3PO4 and HF: HCOOH). Hydrofluoric acid and fluoboric acid are used to dissolve clays and feldspar. Phosphoric and formic acids are added as a buffer to maintain the pH of the solution; also it allows the maximum penetration of acid into the core sample. Different tests have been performed on the core samples before and after the acidizing to do the comparative study on the buffer effect of these acids. The analysis consists of permeability, porosity, color change and pH value tests. There is more increase in permeability and porosity while less change in pH when phosphoric and formic acids were used compared to mud acid. From these results it has been found that the buffer effect of phosphoric acid and formic acid is better than hydrochloric acid.

  9. Origin of Etch Hillocks Formed on On-Axis SiC(0001) Surfaces by Molten KOH Etching

    NASA Astrophysics Data System (ADS)

    Suda, Jun; Shoji, Haruki; Kimoto, Tsunenobu

    2011-03-01

    Molten KOH etching of 6H- and 4H-SiC0001 on-axis substrates was investigated. After molten KOH etching, etch pits originating from threading dislocations (TDs) and basal-plane dislocations (BPDs) were observed on (0001) surfaces. On the other hand, large and small hillocks were observed on (0001) surfaces. The etch hillocks consist of SiC, indicating slower etching at TDs. By comparing the (0001) side and (0001) side of the same substrate, it was found that large hillocks correspond to edge-type TDs, while small hillocks correspond to screw-type TDs.

  10. Corrosion inhibitor for well acidizing treatments

    SciTech Connect

    Briggs, G.L.

    1987-10-06

    This patent describes a treatment fluid useful for increasing the permeability of a subterranean formation in the vicinity of a borehole penetrating the formation, comprising: an aqueous solution of an acid selected from the group consisting of hydrochloric acid, hydrofluoric acid, formic acid, acetic acid, citric acid, and mixtures thereof. The acid is present in an amount effective to increase the permeability of the formation being treated; and an effective amount of a corrosion inhibiting composition which prevents the formation of sludge. The corrosion inhibiting composition comprising a mixture of: 80-90 weight percent propargyl alcohol; 5-10 weight percent 2 ethoxy ethanol; 0.5-3.0 weight percent polyethylene glycol.

  11. Influence of etching time on bond strength in dentin irradiated with erbium lasers.

    PubMed

    Ferreira, Leila Soares; Apel, Christian; Francci, Carlos; Simoes, Alyne; Eduardo, Carlos P; Gutknecht, Norbert

    2010-11-01

    The purpose of this in vitro study was to evaluate the effect of etching time on the tensile bond strength (TBS) of a conventional adhesive bonded to dentin previously irradiated with erbium:yttrium-aluminum-garnet (Er:YAG) and erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) lasers. Buccal and lingual surfaces of 45 third molars were flattened until the dentin was exposed and randomly assigned to three groups (n = 30) according to the dentin treatment: control (not irradiated), irradiated with Er:YAG (1 W; 250 mJ; 4 Hz; 80.6 J/cm(2)) laser or Er,Cr:YSGG (4 W; 200 mJ; 20 Hz; 71.4 J/cm(2)) laser, and into three subgroups (n = 10) according to acid etching time (15 s, 30 s or 60 s) for each experimental group. After acid etching, the adhesive was applied, followed by the construction of an inverted cone of composite resin. The samples were immersed in distilled water (37 degrees C for 24 h) and subjected to TBS test [50 kilogram-force (kgf), 0.5 mm/min]. Data were analyzed by analysis of variance (ANOVA) and Tukey statistical tests (P < or = 0.05). Control group samples presented significant higher TBS values than those of all lased groups. Both irradiated groups exhibited similar TBS values. Samples subjected to the different etching times in each experimental group presented similar TBS. Based on the conditions of this in vitro study we concluded that Er:YAG and Er,Cr:YSGG laser irradiation of the dentin weakens the bond strength of the adhesive. Moreover, increased etching time is not able to modify the bonding strength of the adhesive to irradiated dentin. PMID:19655225

  12. Characterization of aluminum surfaces: Sorption and etching

    NASA Astrophysics Data System (ADS)

    Polkinghorne, Jeannette Clera

    Aluminum, due to its low density and low cost, is a key material for future lightweight applications. However, like other structural materials, aluminum is subject to various forms of corrosion damage that annually costs the United States approximately 5% of its GNP [1]. The main goal is to investigate the effects of various solution anions on aluminum surfaces, and specifically probe pit initiation and inhibition. Using surface analysis techniques including X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy, results have been correlated with those obtained from electrochemical methods and a radiolabeling technique developed in the Wieckowski laboratory. Analysis of data has indicated that important variables include type of anion, solution pH, and applied electrode potential. While aggressive anions such as chloride are usually studied to elucidate corrosion processes to work ultimately toward inhibition, its corrosive properties can be successfully utilized in the drive for higher energy and smaller-scale storage devices. Fundamental information gained regarding anion interaction with the aluminum surface can be applied to tailor etch processes. Standard electrochemical techniques and SEM are respectively used to etch and analyze the aluminum substrate. Aluminum electrolytic capacitors are comprised of aluminum anode foil covered by an anodically grown aluminum oxide dielectric film, electrolytic paper impregnated with electrolyte, and aluminum cathode foil. Two main processes are involved in the fabrication of aluminum electrolytic capacitors, namely etching and anodic oxide formation. Etching of the anode foil results in a higher surface area (up to 20 times area enlargement compared to unetched foil) that translates into a higher capacitance gain, permitting more compact and lighter capacitor manufacture. Anodic oxide formation on the anode, creates the required dielectric to withstand high voltage operation. A detailed investigation of variables such as solution temperature, solution composition, and supplied charge used in these processes can lead to improved foil design and ultimately a better product.

  13. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    SciTech Connect

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical probability of damage initiation at 12 J/cm{sup 2} of an ensemble of scratches decreased from {approx}100 mm{sup -1} of scratch length to {approx}0.001 mm{sup -1}.

  14. Pattern inspection of etched multilayer EUV mask

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Hirano, Ryoichi; Amano, Tsuyoshi; Watanabe, Hidehiro

    2015-10-01

    Patterned mask inspection for an etched multilayer (ML) EUV mask was investigated. In order to optimize the mask structure from the standpoint of not only a pattern inspection by using a projection electron microscope (PEM), but also by considering the other fabrication processes using electron beam (EB) techniques such as CD metrology and mask repair, we employed a conductive layer between the ML and substrate. By measuring the secondary electron emission coefficients (SEECs) of the candidate materials for conductive layer, we evaluated the image contrast and the influence of charging effect. In the cases of 40-pair-ML, 16 nm sized extrusion and intrusion defects were found to be detectable more than 10 sigma in hp 44 nm, 40 nm, and 32 nm line and space (L/S) patterns. Reducing 40-pair-ML to 20-pair-ML degraded the image contrast and the defect detectability. However, by selecting B4C as a conductive layer, 16 nm sized defects remained detectable. These defects were also detected after the etched part was refilled with Si. Moreover, the simulation shows a high sensitivity for detecting the residual-type defects (etching residues). A double layer structure with 2.5-nm-thik B4C on metal film used as a conductive layer was found to have sufficient conductivity and also was found to be free from the surface charging effect and influence of native oxide.

  15. Shapes of agglomerates in plasma etching reactors

    SciTech Connect

    Huang, F.Y.; Kushner, M.J.

    1997-05-01

    Dust particle contamination of wafers in reactive ion etching (RIE) plasma tools is a continuing concern in the microelectronics industry. It is common to find that particles collected on surfaces or downstream of the etch chamber are agglomerates of smaller monodisperse spherical particles. The shapes of the agglomerates vary from compact, high fractal dimension structures to filamentary, low fractal dimension structures. These shapes are important with respect to the transport of particles in RIE tools under the influence electrostatic and ion drag forces, and the possible generation of polarization forces. A molecular dynamics simulation has been developed to investigate the shapes of agglomerates in plasma etching reactors. We find that filamentary, low fractal dimension structures are generally produced by smaller ({lt}100s nm) particles in low powered plasmas where the kinetic energy of primary particles is insufficient to overcome the larger Coulomb repulsion of a compact agglomerate. This is analogous to the diffusive regime in neutral agglomeration. Large particles in high powered plasmas generally produce compact agglomerates of high fractal dimension, analogous to ballistic agglomeration of neutrals. {copyright} {ital 1997 American Institute of Physics.}

  16. Sb (111) Abnormal Behavior under Ion Etching

    NASA Astrophysics Data System (ADS)

    Smirnov, A. A.; Bozhko, S. I.; Ionov, A. M.; Protasova, S. G.; Chekmazov, S. V.; Kapustin, A. A.

    Due to a strong spin-orbit interaction (SOI), the surface states of Sb (111) are similar to those for topological insulators (TI) Sugawara et al. (2006). The surface states are protected by time-reversal symmetry and energy dispersion is a linear function of momentum. Defects in crystal structure lead to a local break of the surface translational symmetry and can modify surface states. It is the primary reason to study defects of Sb crystal structure and their effect on the surface states dispersion. Etching of the Sb (111) surface using Ar+ ions is a common way to create defects both in a bulk and on the surface of the crystal. Sb (111) ion etching at room temperature reveals anomalous behavior of surface crystal structure. It results in formation of flat terraces of 2 nm in size. Investigation of electronic structure of the etched Sb (111) surface has demonstrated increase of density of states (DOS) at the Fermi level. The results are discussed in terms of local break of conditions of Peierls transition.

  17. Etching of moldavities under natural conditions

    NASA Technical Reports Server (NTRS)

    Knobloch, V.; Knoblochova, Z.; Urbanec, Z.

    1983-01-01

    The hypothesis that a part of the lechatellierites which originated by etching from a basic moldavite mass became broken off after deposition of moldavite in the sedimentation layer is advanced. Those found close to the original moldavite were measured for statistical averaging of length. The average length of lechatelierite fibers per cubic mm of moldavite mass volume was determined by measurement under a microscope in toluene. The data were used to calculate the depth of the moldavite layer that had to be etched to produce the corresponding amount of lechatelierite fragments. The calculations from five "fields" of moldavite surface, where layers of fixed lechatelierite fragments were preserved, produced values of 2.0, 3.1, 3.5, 3.9 and 4.5. Due to inadvertent loss of some fragments the determined values are somewhat lower than those found in references. The difference may be explained by the fact that the depth of the layer is only that caused by etching after moldavite deposition.

  18. Overview Of Dry-Etch Techniques

    NASA Astrophysics Data System (ADS)

    Salzer, John M.

    1986-08-01

    With pattern dimensions shrinking, dry methods of etching providing controllable degrees of anisotropy become a necessity. A number of different configurations of equipment - inline, hex, planar, barrel - have been offered, and within each type, there are numerous significant variations. Further, each specific type of machine must be perfected over a complex, interactive parameter space to achieve suitable removal of various materials. Among the most critical system parameters are the choice of cathode or anode to hold the wafers, the chamber pressure, the plasma excitation frequency, and the electrode and magnetron structures. Recent trends include the use of vacuum load locks, multiple chambers, multiple electrodes, downstream etching or stripping, and multistep processes. A major percentage of etches in production handle the three materials: polysilicon, oxide and aluminum. Recent process developments have targeted refractory metals, their silicides, and with increasing emphasis, silicon trenching. Indeed, with new VLSI structures, silicon trenching has become the process of greatest interest. For stripping, dry processes provide advantages other than anisotropy. Here, too, new configurations and methods have been introduced recently. While wet processes are less than desirable from a number of viewpoints (handling, safety, disposal, venting, classes of clean room, automatability), dry methods are still being perfected as a direct, universal replacement. The paper will give an overview of these machine structures and process solutions, together with examples of interest. These findings and the trends discussed are based on semiannual survey of manufacturers and users of the various types of equipment.

  19. Laser etching of polymer masked leadframes

    NASA Astrophysics Data System (ADS)

    Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

    1997-02-01

    A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 ?m radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

  20. Capability of etched multilayer EUV mask fabrication

    NASA Astrophysics Data System (ADS)

    Takai, Kosuke; Murano, Koji; Kamo, Takashi; Morikawa, Yasutaka; Hayashi, Naoya

    2014-09-01

    Recently, development of next generation extremely ultraviolet lithography (EUVL) equipment with high-NA (Numerical Aperture) optics for less than hp10nm node is accelerated. Increasing magnification of projection optics or mask size using conventional mask structure has been studied, but these methods make lithography cost high because of low through put and preparing new large mask infrastructures. To avoid these issues, etched multilayer EUV mask has been proposed. As a result of improvement of binary etched multilayer mask process, hp40nm line and space pattern on mask (hp10nm on wafer using 4x optics) has been demonstrated. However, mask patterns are easily collapsed by wet cleaning process due to their low durability caused by high aspect ratio. We propose reducing the number of multilayer pairs from 40 to 20 in order to increase durability against multilayer pattern collapse. With 20pair multilayer blank, durable minimum feature size of isolated line is extended from 80nm to 56nm. CD uniformity and linearity of 20pair etched multilayer pattern are catching up EUV mask requirement of 2014.

  1. Etching characteristics of LiNbO{sub 3} in reactive ion etching and inductively coupled plasma

    SciTech Connect

    Ren, Z.; Yu, S.; Heard, P. J.; Marshall, J. M.; Thomas, P. A.

    2008-02-01

    The etching characteristics of congruent LiNbO{sub 3} single crystals including doped LiNbO{sub 3} and proton-changed LiNbO{sub 3} have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO{sub 3} have been fabricated and optically measured.

  2. Scanning force microscopy study of etch pits formed during dissolution of a barite (001) surface in CDTA and EDTA solutions

    SciTech Connect

    Wang, K.S.; Resch, R.; Dunn, K.; Shuler, P.; Tang, Y.; Koel, B.E.; Yen, T.F.

    2000-01-25

    Dissolution of the barite (001) surface in aqueous solutions of 0.18 M CDTA (trans-1,2-cyclohexylenediaminetetraacetic acid) and 0.18 M EDTA (ethylenediaminetetraacetic acid) at pH 12 was investigated using ex situ scanning force microscopy. In both solutions, triangular and trapezoidal etch pits developed on the (001) surface and became deeper and longer with increasing dissolution time. The orientation of the etch pits in CDTA and EDTA solutions was elongated along the crystallographic b axis. Furthermore, dissolution of the (001) surface in a layer-by-layer fashion was observed. This resulted in the formation of alternating etch pits with heights of one half-unit cell (about 3.6 {angstrom}), with the orientations of any two consecutive etch pits pointing oppositely to each other. In CDTA, etch pits within the half-unit cell were frequently bounded along the {l{underscore}angle}120{r{underscore}angle} and {l{underscore}angle}010{r{underscore}angle} directions. However, in EDTA, etch pits within the half-unit cell were bounded along the {l{underscore}angle}110{r{underscore}angle} and {l{underscore}angle}010{r{underscore}angle} directions. The dissolution behavior of barite in these two solutions is different based on the observed differences in the etch pits geometries as an assay for specific interactions between the crystal surface and organic molecules. Thus, the authors suggest that CDTA molecules bind to one Ba{sup 2+} cation along the {l{underscore}angle}120{r{underscore}angle} and/or {l{underscore}angle}010{r{underscore}angle} directions and EDTA molecules bind along the {l{underscore}angle}110{r{underscore}angle} directions to two Ba{sup 2+} cations exposed on the (001) surface.

  3. Optimization of etching and reading procedures for the Autoscan 60 track etch system

    SciTech Connect

    McKeever, R.; Devine, R.; Coennen, C.

    1997-02-11

    The Los Alamos National Laboratory is charged with measuring the occupational exposure to radiological workers and contractors throughout the Laboratory, which includes many different sites with multiple and varied radiation fields. Of concern here are the high energy neutrons such as those generated during accelerator operations at Los Alamos Neutron Science Center (LANSCE). In 1993, the Los Alamos National Laboratory purchased an Autoscan 60 automated reader for use with chemically etched CR39 detectors. The dosimeter design employed at LANL uses a plastic, hemispherical case, encompassing a polystyrene pyramidal detector holder. The pyramidal holder supports three detectors at a 35{degree} angle. Averaging the results of the three detectors minimizes the angular dependence normally associated with a planar dosimeter. The Autoscan 60 is an automated reading system for use with CR39 chemical etch detectors. The detectors are immersed in an etch solution to enhance the visibility of the damage sites caused by recoil proton impact with the hydrogen atoms in the detector. The authors decided to increase the etch time from six hours to 15 hours, while retaining the 70 C temperature. The reason for the change in the etch is to enhance the sensitivity and precision of the CR39 detector as indicated by this study.

  4. A spin-on photosensitive polymeric etch protection mask for anisotropic wet etching of silicon

    NASA Astrophysics Data System (ADS)

    Dalvi-Malhotra, J.; Zhong, X. F.; Planje, C.; Brand, G.; Yess, K.

    2008-02-01

    Newly developed photosensitive etch protection materials have key advantages over standard photoresists typically used in today's MEMS applications. Using these new materials eliminates the need for silicon nitride (SiN) masks deposited via CVD processes, which require significant investments in processing equipment, utilize extreme processing conditions and contribute to an overall decrease in throughput. This new technology will enhance throughput by reducing the number of process steps and simplify the process flow with minimal impact on overall undercut performance. The polymeric coating serves as a SiN mask replacement for etching silicon substrates in alkaline anisotropic etchants such as KOH and TMAH. The undercut performance observed is larger than that of SiN when etched in KOH, but when alternative alkaline etchants such as TMAH are used, the undercut is identical (1-2% with respect to etch depth). Various factors, such as primer bake, topcoat final cure temperature, etchant concentration and substrate surface conditions, have all been shown to affect undercut results. An additional advantage of this new technology is that it can be easily reworked/removed by solvents, plasma etch, Nano-Strip®, Piranha and RCA cleaning solutions depending on where the removal takes place in the process.

  5. Influence of microhybrid resin and etching times on bleached enamel for the bonding of ceramic brackets.

    PubMed

    Firoozmand, Leily Macedo; Brando, Juliana Viana Pereira; Fialho, Melissa Proena Nogueira

    2013-01-01

    The aim of this study was to evaluate the shear bond strength (SBS) of polycrystalline ceramic brackets (PCB) bonded after bleaching treatment using different composite resins and enamel etching times. A total of 144 bovine incisors were randomly divided into two study groups (n = 72, each) as follows: G1, enamel bleached with 35% hydrogen peroxide, and G2 (control group), enamel unbleached. After the bleaching treatment, the samples were stored in artificial saliva for 14 days. These groups were further divided into two subgroups (n = 36, each) as follows: GA, brackets bonded with Transbond XT (3M) and GB, brackets bonded with Filtek Z250 (3M). For each resin used, three different etching times with 37% phosphoric acid (15, 30 and 60 seconds) were tested. SBS tests were performed using a universal testing machine (EMIC), and the adhesive remnant index (ARI) score was verified. Significant differences among the three experimental conditions and interactions between the groups were observed. The type of composite resin accounted for 24% of the influence on the bond strength, whereas the etching time and bleaching treatment accounted for 14.5% and 10% of the influence on bond strength, respectively. The ARI revealed that the most common area of adhesion failure was at the composite resin-bracket interface. The type of composite resin, etching time and external bleaching significantly influenced the SBS of PCB on enamel, even after 14 days of saliva storage. PMID:23538425

  6. Improving UV laser damage threshold of fused silica optics by wet chemical etching technique

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Li, Yaguo; Yuan, Zhigang; Wang, Jian; Xu, Qiao; Yang, Wei

    2015-07-01

    Fused silica is widely used in high-power laser systems because of its good optical performance and mechanical properties. However, laser damage initiation and growth induced by 355 nm laser illumination in optical elements have become a bottleneck in the development of high energy laser system. In order to improve the laser-induced damage threshold (LIDT), the fused silica optics were treated by two types of HF-based etchants: 1.7%wt. HF acid and buffer oxide etchant (BOE: the mixture of 0.4%wt. HF and 12%wt. NH4F), respectively, for varied etching time. Damage testing shows that both the etchants increase the damage threshold at a certain depth of material removal, but further removal of material lowers the LIDT markedly. The etching rates of both etchants keep steady in our processing procedure, ~58 μg/min and ~85 μg/min, respectively. The micro-surface roughness (RMS and PV) increases as etching time extends. The hardness (H) and Young's modulus (E) of the fused silica etched for diverse time, measured by nano-indenter, show no solid evidence that LIDT can be related to hardness or Young's modulus.

  7. Attachment and spreadout study of 3T3 cells onto PP track etched films

    NASA Astrophysics Data System (ADS)

    Smolko, Eduardo; Mazzei, Ruben; Tadey, Daniel; Lombardo, Daniel

    2001-12-01

    Polymer surface modifications are obtained by the application of radiation treatments and other physico-chemical methods: fission fragment (ff) irradiation and etching. The biocompatibility of the surface is then observed by cell seeding and cell adhesion experiments. Approaches to improvement of the cell adhesion are obtained by different methods: for example, in PS, cell adhesion is improved after ion implantation; in PMMA, after bombarding the polymer, the surface is reconditioned with surfactants and proteins and in PVDF, cell adhesion is assayed on nuclear tracks membranes. In this work, we obtained important cell adhesion improvements in PP films by irradiation with swift heavy ions and subsequent etching of the nuclear tracks. We use BOPP (isotactic -25 ?m thickness). Irrradiations were performed with a Cf-252 californium ff source. The source has a heavy ff and a light one, with 160-200 MeV energy divided among them corresponding to ff energies between 1 and 2 MeV/amu. A chemical etching procedure consisting of a solution of sulphuric acid and chromium three oxide at 85 C was used. The 3T3 NIH fibroblast cell line was used for the cell adhesion experiment. Here we report for the first time, the results of a series of experiments by varying the ff fluence and the etching time showing that attachment and spreadout of cells are very much improved in this cell line according to the number of pores and the pore size.

  8. ICP etching of silicon for micro and nanoscale devices

    NASA Astrophysics Data System (ADS)

    Henry, Michael David

    The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon. Although many tools have been created to do this, the most finely honed tool is the Inductively Couple Plasma Reactive Ion Etcher. This tool has the ability to finesse structures from silicon unachievable on other machines. Extracting structures such as high aspect ratio silicon nanowires requires more than just this tool, however. It requires etch masks which can adequately protect the silicon without interacting with the etching plasma and highly tuned etch chemistry able to protect the silicon structures during the etching process. In the work presented here, three highly tuned etches for silicon, and its oxide, will be described in detail. The etches presented utilize a type of etch chemistry which provides passivation while simultaneously etching, thus permitting silicon structures previously unattainable. To cover the range of applications, one etch is tuned for deep reactive ion etching of high aspect ratio micro-structures in silicon, while another is tuned for high aspect ratio nanoscale structures. The third etch described is tuned for creating structures in silicon dioxide. Following the description of these etches, two etch masks for silicon will be described. The first mask will detail a highly selective etch mask uniquely capable of protecting silicon for both etches described while being compatible with mainstream semiconductor fabrication facilities. This mask is aluminum oxide. The second mask detailed permits for a completely dry lithography on the micro and nanoscale, FIB implanted Ga etch masks. The third chapter will describe the fabrication and in situ electrical testing of silicon nanowires and nanopillars created using the methods previously described. A unique method for contacting these nanowires is also described which has enabled investigation into the world of nanoelectronics. The fourth and final chapter will detail the design and construction of high magnetic fields and integrated planar microcoils, work which was enabled by the etching detailed here. This research was directed towards creation of a portable NMR machine.

  9. Improving aluminum nitride plasma etch process for MEMS applications

    NASA Astrophysics Data System (ADS)

    Bliznetsov, Vladimir; Johari, Badrul Hisam Bin; Tahar Chentir, Mohamed; Li, Wei Hong; Wong, Lai Yin; Merugu, Srinivas; Zhang, Xiao Lin; Singh, Navab

    2013-11-01

    We present a new plasma etch process optimized for etching piezoelectric aluminum nitride (AlN) film deposited on thin molybdenum (Mo) metal electrode. Such film stack finds application in the integration of AlN-based RF microelectromechanical systems devices. The process is based on Cl2/BCl3/Ar gas chemistry with added buffer gas in inductively coupled plasma reactive ion etching system. The new gas mixture overcomes a generic problem of etched surface roughness without significant drop in AlN etch rate. Using design of experiment, the process window is optimized for improving selectivity to Mo and reducing microtrenching while maintaining smooth etched surface. Finally, an etching rate of 280 nm min-1 with reliable etch stop on Mo electrode and smooth bottom surface is reported. The integration suitability of the developed etch process is tested by etching 2.0 to 5.0 m size square shaped via holes in 1.0 m thick (0 0 2) oriented piezoelectric AlN on 0.2 m thick Mo electrode while integrating contour mode resonators.

  10. NiCr etching in a reactive gas

    SciTech Connect

    Ritter, J.; Boucher, R.; Morgenroth, W.; Meyer, H. G.

    2007-05-15

    The authors have etched NiCr through a resist mask using Cl/Ar based chemistry in an electron cyclotron resonance etch system. The optimum gas mixture and etch parameters were found for various ratios of Ni to Cr, based on the etch rate, redeposits, and the etch ratio to the mask. The introduction of O{sub 2} into the chamber, which is often used in the etching of Cr, served to both increase and decrease the etch rate depending explicitly on the etching parameters. Etch rates of >50 nm min{sup -1} and ratios of >1 (NiCr:Mask) were achieved for NiCr (80:20). Pattern transfer from the mask into the NiCr was achieved with a high fidelity and without redeposits for a Cl/Ar mix of 10% Ar (90% Cl{sub 2}) at an etch rate of {approx_equal}50 nm min{sup -1} and a ratio of 0.42 (NiCr:ZEP 7000 e-beam mask)

  11. Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

    SciTech Connect

    Muttalib, Muhammad Firdaus A. Chen, Ruiqi Y.; Pearce, Stuart J.; Charlton, Martin D. B.

    2014-07-01

    Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.

  12. Acid inhibition of CRA`s: A review

    SciTech Connect

    Walker, M.L.; Cassidy, J.M.; Lancaster, K.R.; McCoy, T.H.

    1994-12-31

    This paper will review the brief history in the literature of the inhibition of corrosion resistant alloys (CRA`s) in acidic stimulation fluids. This review primarily discusses the problems associated with inhibiting 13% Cr and 22% Cr duplex steels in hydrochloric (HCI) and hydrochloric-hydrofluoric (HCl-HF) acid systems using low alloy inhibitors and the successes achieved using high alloy inhibitors. Other areas briefly discussed are the repassivation of 13% Cr and 22% Cr, effect on nickel-based alloys and use of organic acids.

  13. Experiment and Results on Plasma Etching of SRF cavities

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Peshl, J; Vuskovic, Leposova; Popovic, Svetozar; Valente, Anne-Marie; Phillips, H Lawrence

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electro polished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  14. Development of TMAH anisotropic etching manufacturing process for MEMS

    NASA Astrophysics Data System (ADS)

    Tsaur, Jiunn-Jye; Yang, Shih-I.; Du, Chen-Hsun; Lin, Zhongshen; Huang, Cheng-Tang; Lee, Cheng-Kuo

    2000-08-01

    An investigation on the influence of etchant concentration, dissolving silicon content and additives during silicon anisotropic etching in TMAH has been carried out. Based on the Taguchi method, the etch rates of Si, Al, and SiO2 were measured via under-etch experiments using the wagon- wheel mask pattern. The improvement on the surface quality was observed by agitating solution under ultrasonic vibration in TMAH solutions with additives. Furthermore, a new approach is developed to reduce wet etching time and to control etched gap depth between the released micro membrane and the silicon substrate. This method employs a polysilicon or an amorphous silicon thin layer embedded between the micro membrane and silicon substrate as a sacrificial layer, then this layer would be fast iso tropically etched away by TMAH solution.

  15. ECR, ICP, and RIE plasma etching of GaN

    SciTech Connect

    Shul, R.J.; McClellan, G.B.; Rieger, D.J.; Hafich, M.J.

    1996-06-01

    The group III-nitrides continue to generate interest due to their wide band gaps and high dielectric constants. These materials have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs). Realization of more advanced devices; including lasers and high temperature electronics, requires dry etch processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {mu}m/min. In this paper, we compare electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) etch results for GaN. These are the first ICP etch results reported for GaN. We also report ECR etch rates for GaN as a function of growth technique.

  16. ICP dry etching of III-V nitrides

    SciTech Connect

    Vartuli, C.B.; Lee, J.W.; MacKenzie, J.D.

    1997-10-01

    Inductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH{sub 4}/H{sub 2}/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH{sub 4} based chemistries. The etch rates increased with increasing dc bias. At low rf power (150 W), the etch rates increased with increasing ICP power, while at 350 W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were {le} 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

  17. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  18. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  19. Modification of etching patterns in bovine dental enamel.

    PubMed

    Lees, S; Trombly, P L; Skobe, Z; Gariepy, E E; Trull, A F

    1979-08-01

    It is presumed that the etching pattern is controlled by the residual organic content of dental enamel. Pretreatment with 1.ON NaOH sould remove the organic material and modify the etching pattern. SEM studies and other tests for physical and chemical properties show that the predicted modification of the etching pattern, when the tooth surface is pretreated with NaOH solution, occurs apparently without other changes or properties. PMID:381342

  20. Effect of chamber seasoning on the chrome dry etch process

    NASA Astrophysics Data System (ADS)

    Clevenger, Jason O.; Buie, Melisa J.; Sandlin, Nicole L.

    2003-08-01

    Chamber surface condition in high-density plasma etch reactors can dramatically affect process performance. The well-known "first wafer effect" in wafer etch processes is often reduced by a "seasoning" process which runs an appropriate etch chemistry on a dummy wafer prior to the etch of a production wafer. The seasoning process has proven to be an effective method for minimizing wafer process shift, but it has not been examined for photomask production using typical dry etch chemistries. In this work, a series of PR/Cr/Quartz photomasks were etched in a Etec Systems, Inc. Tetra photomask etch system with the goal of quantifying the amount of change in etch rate and critical dimension (CD's) following an isopropanol "wet" cleaning of the chamber, as well as the amount of seasoning necessary to minimize the observed process shift using a standard Cl2/O2/He chemistry. The chamber seasoning and etch processes were observed via in-situ recording of optical emission from the plasma reactor with a CCD array and monochromator. Alumina coupons affixed to different areas of the chamber prior to mask seasoning/etching were subjected to X-Ray Photoelectron Spectroscopy as well as Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) to determine the identity of the chemical species deposited in the chamber during the seasoning/etching process. Results from these etching processes clearly indicated the presence of a "first mask effect," which can be reduced by a seasoning process appropriate for the particular chemistry involved. Alumina coupon surface analysis revealed a negligible amount of deposition accumulating during the experiments.

  1. Etched-multilayer phase shifting masks for EUV lithography

    DOEpatents

    Chapman, Henry N.; Taylor, John S.

    2005-04-05

    A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

  2. Influence of erbium, chromium-doped: Yttrium scandium-gallium-garnet laser etching and traditional etching systems on depth of resin penetration in enamel: A confocal laser scanning electron microscope study

    PubMed Central

    Vijayan, Vishal; Rajasigamani, K.; Karthik, K.; Maroli, Sasidharan; Chakkarayan, Jitesh; Haris, Mohamed

    2015-01-01

    Objective: This study was performed to assess the resin tag length penetration in enamel surface after bonding of brackets to identify which system was most efficient. Methodology: Our study was based on a more robust confocal microscopy for visualizing the resin tags in enamel. Totally, 100 extracted human first and second premolars have been selected for this study and were randomly divided into ten groups of 10 teeth each. In Group 1, the buccal enamel surface was etched with 37% phosphoric acid (3M ESPE), Group 2 with 37% phosphoric (Ultradent). In Groups 5, 6, and 7, erbium, chromium-doped: Yttrium scandium-gallium-garnet (Er, Cr: YSGG) laser (Biolase) was used for etching the using following specifications: Group 5 (1.5 W/20 Hz, 15 s), Group 6 (2 W/10 Hz, 15 s), and Group 7 (2 W/20 Hz, 15 s). In Groups 8, 9, and 10, Er, Cr: YSGG laser (Biolase) using same specifications and additional to this step, conventional etching on the buccal enamel surface was etched with 37% (3M ESPE) after laser etching. In Groups 1, 5, 6, 7, 8, 9, and 10 3M Unitek Transbond XT primer was mixed with Rhodamine B dye (Sigma-Aldrich, Germany) to etched surface and then cured for 20 s. In Group 2, Ultradents bonding agent was mixed with Rhodamine B. In Group 3, 3M Unitek Transbond PLUS, Monrovia, USA, which was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Group 4, with self-etching primer (Ultradent-Peak SE, USA) was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Later (3M Unitek, Transbond XT, Monrovia USA) [Figure 1] was used to bond the modified Begg brackets (T. P. Orthodontics) in Groups 1, 3, 5, 6, 7, 8, 9, and 10. In Groups 2, 4 Ultradent-Peak LC Bond was used to bond the modified brackets. After curing brackets were debonded, and enamel depth penetration was assessed using confocal laser scanning microscope. Results: Group J had a mean maximum depth of penetration of 100.876 μm, and Group D was the least having a maximum value of 44.254 μm. Conclusions: Laser alone groups had comparable depths of penetration to that of self-etching groups but much lower than conventional acid etched groups. PMID:26538930

  3. Mask undercut in deep silicon etch

    NASA Astrophysics Data System (ADS)

    Saraf, I.; Goeckner, M.; Goodlin, Brian; Kirmse, Karen; Overzet, L.

    2011-04-01

    Mask undercut in the time-multiplexed deep silicon etch process is becoming an increasingly significant issue as it is used to produce smaller critical dimension features. Models of the process must contain the necessary physics to reproduce the dependencies of mask undercut. We argue that the reason undercut develops is the dependence of the deposition step on ion flux. Our experiments of C4F8 (and CHF3 not shown) plasmas show that the film growth is dominantly ion-enhanced. This leads naturally to a mask undercut that increases in time. A more neutral flux dominant deposition step would result in reduced mask undercut.

  4. Photoinduced laser etching of a diamond surface

    SciTech Connect

    Kononenko, V V; Komlenok, M S; Pimenov, S M; Konov, V I

    2007-11-30

    Nongraphitising ablation of the surface of a natural diamond single crystal irradiated by nanosecond UV laser pulses is studied experimentally. For laser fluences below the diamond graphitisation threshold, extremely low diamond etching rates (less than 1nm/1000 pulses) are obtained and the term nanoablation is used just for this process. The dependence of the nanoablation rate on the laser fluence is studied for samples irradiated both in air and in oxygen-free atmosphere. The effect of external heating on the nanoablation rate is analysed and a photochemical mechanism is proposed for describing it. (interaction of laser radiation with matter. laser plasma)

  5. Physics and chemistry of complex oxide etching and redeposition control

    NASA Astrophysics Data System (ADS)

    Margot, Jolle

    2012-10-01

    Since its introduction in the 1970s, plasma etching has become the universal method for fine-line pattern transfer onto thin films and is anticipated to remain so in foreseeable future. Despite many success stories, plasma etching processes fail to meet the needs for several of the newest materials involved in advanced devices for photonic, electronic and RF applications like ferroelectrics, electro-optic materials, high-k dielectrics, giant magnetoresistance materials and unconventional conductors. In this context, the work achieved over the last decade on the etching of multicomponent oxides thin films such as barium strontium titanate (BST), strontium titanate (STO) and niobate of calcium and barium (CBN) will be reviewed. These materials present a low reactivity with usual etching gases such as fluorinated and chlorinated gases, their etching is mainly governed by ion sputtering and reactive gases sometimes interact with surface materials to form compounds that inhibit etching. The etching of platinum will also be presented as an example of unconventional conductor materials for which severe redeposition limits the achievable etching quality. Finally, it will be shown how simulation can help to understand the etching mechanisms and to define avenues for higher quality patterning.

  6. Wet etching fabrication of photonic quantum ring laser

    NASA Astrophysics Data System (ADS)

    Kim, Moojin; Kim, Dongkwon; Lee, Seongeun; Kwon, O'Dae

    2004-11-01

    We present a wet etching process to fabricate good vertical mesa structures that result in high quality (Q) factors up to 2104, important for smooth sidewall cavities such as the photonic quantum ring (PQR) laser. Q factor analyses also indicate that it can be improved much more once the internal scattering from the wafer materials is minimized. We use an etching solution of H3PO4:CH3OH:H2O2 with a volume ratio of 3:1:1, and a single-layer photoresist etch mask for etching GaAs /AlGaAs structures of the PQR laser several micrometer deep. As the etching temperature is varied from 20to40C, the etched surface roughness decreases from 4.690to0.703nm according to scanning electron microscope and atomic force microscopy studies. From the activation energy analysis for the above etching process and the temperature dependence, the etching process is shown to be reaction limited. The PQR lasers with an active diameter of 10?m, fabricated by the wet etching process, show the spectral linewidth of 0.04nm. Three-dimensional Rayleigh-Fabry-Perot mode spectra for the PQR laser are also reported for the angle-resolved emission modes.

  7. Molecular Dynamics Simulations Of Nanometer-Scale Feature Etch

    SciTech Connect

    Vegh, J. J.; Graves, D. B.

    2008-09-23

    Molecular dynamics (MD) simulations have been carried out to examine fundamental etch limitations. Beams of Ar{sup +}, Ar{sup +}/F and CF{sub x}{sup +} (x = 2,3) with 2 nm diameter cylindrical confinement were utilized to mimic 'perfect' masks for small feature etching in silicon. The holes formed during etch exhibit sidewall damage and passivation as a result of ion-induced mixing. The MD results predict a minimum hole diameter of {approx}5 nm after post-etch cleaning of the sidewall.

  8. Inductively coupled plasma etching of III-nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Smith, Scott Alan

    The principal focus of this research was the employment of an in-house designed and constructed inductively coupled plasma (ICP) system for integrated studies pertaining to the etching rates and etching selectivity among AlN, GaN, and AlxGa1-xN. An (ICP) system was chosen because of its high plasma density and low cost relative to other high-density plasma etching systems. The etch rates were studied as a function of ICP power, pressure, DC bias, and gas composition. The use of a mixture of 2 sccm BCl 3 and 18 sccm Cl2 resulted in a maximum etch rate of 2.2 microm/min for GaN as well as nearly vertical sidewalls with proper masking. A selectivity value, i.e. the ratio of the etch rates between two materials, as high as 48 was achieved between GaN and AlN with the addition of low concentrations of O2 to a Cl2/Ar chemistry. The use of another selectivity technique, namely, low DC biases resulted in a maximum selectivity of 38. The mechanisms responsible for the GaN etching were determined by monitoring both the ion density with a Langmuir probe and the relative Cl radical density with an optical emission spectrometer. Increasing the ion density resulted in a non-linear increase in the etch rates; increasing the Cl radical density had a minimal affect on etch rate.

  9. Kinetic Monte Carlo simulations of anisotropic Si(100) etching: Modeling the chemical origins of characteristic etch morphologies

    NASA Astrophysics Data System (ADS)

    Gupta, Ankush; Aldinger, Brandon S.; Faggin, Marc F.; Hines, Melissa A.

    2010-07-01

    An atomistic, chemically realistic, kinetic Monte Carlo simulator of anisotropic Si(100) etching was developed. Surface silicon atoms were classified on the basis of their local structure, and all atoms of each class were etched with the same rate. A wide variety of morphologies, including rough, striped, and hillocked, was observed. General reactivity trends were correlated with specific morphological features. The production of long rows of unstrained dihydride species, recently observed in NH4F (aq) etching of Si(100), could only be explained by the rapid etching of dihydrides that are adjacent to (strained) monohydridesso-called "?-dihydrides." Some etch kinetics promoted the formation of {111}-microfaceted pyramidal hillocks, similar in structure to those observed experimentally during Si(100) etching. Pyramid formation was intrinsic to the etch kinetics. In contrast with previously postulated mechanisms of pyramid formation, no masking agent (e.g., impurity, gas bubble) was required. Pyramid formation was explained in terms of the slow etch rate of the {111} sides, {110} edges, and the dihydride species that terminated the apex of the pyramid. As a result, slow etching of Si(111) surfaces was a necessary, but insufficient, criterion for microfacet formation on Si(100) surfaces.

  10. Bonding of polymers to enamel: influence of deposits formed during etching, etching time and period of water immersion.

    PubMed

    Beech, D R; Jalaly, T

    1980-07-01

    A technique for measuring the shear bond strength of composites to etched enamel was developed. The importance of thorough washing of the enamel surface to remove deposits formed during etching was demonstrated by measurements of bond strength and by scanning electron microscopy. One of three orthodontic adhesive systems showed a highly significant increase in bond strength after immersion in water for three months. Etching times as short as five seconds gave a bond strength not significantly different from that obtained after a one-minute etch. PMID:6991561

  11. Use of super acids to digest chrysotile and amosite asbestos in simple mixtures or matrices found in building materials compositions

    SciTech Connect

    Sugama, T.; Petrakis, L.; Webster, R.P.

    1999-12-21

    A composition for converting asbestos-containing material to environmentally benign components is provided. The composition comprises a fluoro acid decomposing agent which can be applied to either amosite-containing thermal insulation or chrysotile-containing fire-proof material or to any asbestos-containing material which includes of chrysotile and amosite asbestos. The fluoro acid decomposing agent includes FP{sub 0}(OH){sub 2}, hexafluorophosphoric acid, a mixture of hydrofluoric and phosphoric acid and a mixture of hexafluorophosphoric acid and phosphoric acid. A method for converting asbestos-containing material to environmentally benign components is also provided.

  12. Improving the quality of the quartz fiber postcore bond using sodium ethoxide etching and combined silane/adhesive coupling.

    PubMed

    Monticelli, Francesca; Osorio, Raquel; Toledano, Manuel; Goracci, Cecilia; Tay, Franklin R; Ferrari, Marco

    2006-05-01

    The influence of different silane/dentin adhesives on the microtensile bond strengths of a hybrid composite to sodium ethoxide-etched quartz fiber posts was investigated. A prehydrolyzed silane was applied without an adhesive and compared to two-component systems in which hydrolysis of the silane occurred after mixing with the acidic monomer present in the dentin adhesives. Nanoleakage along post/core interfaces was examined after silver nitrate tracer penetration using scanning electron microscopy. Higher interfacial strengths and more uniform adaptation between the etched fiber post surface and the composite core were recorded after post treatment with silane/adhesive couplings. The combination of silane with two-step self-etch adhesives improves the chemical retention of composites around etched fiber posts with minimal nanoleakage. Although the one-step self-etching adhesive/silane combination enhances post adhesion, the extensive nanoleakage provides channels for rapid water sorption that may expedite hydrolytic degradation of the post/core interface. PMID:16631846

  13. Depth-resolved subsurface defects in chemically etched SrTiO3

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Doutt, D.; Merz, T.; Chakhalian, J.; Kareev, M.; Liu, J.; Brillson, L. J.

    2009-03-01

    Depth-resolved cathodoluminescence spectroscopy of atomically flat TiO2-terminated SrTiO3 single crystal surfaces reveals dramatic differences in native point defects produced by conventional etching with buffered HF (BHF) and an alternative procedure using HCl-HNO3 acidic solution (HCLNO), which produces three times fewer oxygen vacancies before and nearly an order of magnitude fewer after pure oxygen annealing. BHF-produced defect densities extend hundreds of nanometers below the surface, whereas the lower HCLNO-treated densities extend less than 50 nm. This "Arkansas" HCLNO etch and anneal method avoids HF handling and provides high-quality SrTiO3 surfaces with low native defect density for complex oxide heterostructure growth.

  14. Reactive ion etching (RIE) technique for application in crystalline silicon solar cells

    SciTech Connect

    Yoo, Jinsu

    2010-04-15

    Saw damage removal (SDR) and texturing by conventional wet chemical processes with alkali solution etch about 20 micron of silicon wafer on both sides, resulting in thin wafers with which solar cell processing is difficult. Reactive ion etching (RIE) for silicon surface texturing is very effective in reducing surface reflectance of thin crystalline silicon wafers by trapping the light of longer wavelength. High efficiency solar cells were fabricated during this study using optimized RIE. Saw damage removal (SDR) with acidic mixture followed by RIE-texturing showed the decrease in silicon loss by {proportional_to}67% and {proportional_to}70% compared to conventional SDR and texturing by alkaline solution. Also, the crystalline silicon solar cells fabricated by using RIE-texturing showed conversion efficiency as high as 16.7% and 16.1% compared with 16.2%, which was obtained in the case of the cell fabricated with SDR and texturing with NaOH solution. (author)

  15. Determination of the Efficiency of Mixed-Acid Digestions of Sediments

    SciTech Connect

    Huerta Vazquez, Alejandra I.; Gill, Gary A.

    2007-01-01

    Mixed-acid digestion is a method often used for the determination of elemental analysis of sediment samples. It is crucial that efficiency details associated with the digestion method be well understood on an element by element basis. Battelle’s Marine Sciences Laboratory Standard Operating Procedure for Sediment Mixed-Acid Digestions was modified to identify conditions which produce optimal recovery of elements. The parameters that were adjusted for testing were mass of sediment, mixed-acid volume, mixed-acid composition and digestion time. Digestion involves treatment of the sediment sample with mixed-acid mixtures at 135º C ± 10º in a Teflon® digestion bomb. Typical analytical methods include Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES) and Inductively Coupled Plasma – Mass Spectrometry (ICP-MS). Initial experiments involved determining the optimal ratio of acid volume to mass of sediment. Experiments were designed to identify the point at which insufficient acid was used to effectively digest a given mass of sediment. When the mass of sediment was varied between 0.2 and 1.0 gram using a 4 mL aqua regia acid mixture (3 mL hydrochloric acid and 1 mL nitric acid), there was no effect on the recovery of the elements Al, Ba, Ca, Co, Cr, Cu, Fe, Mg, Mn, Ni, Pb, Sr, Ti, V, and Zn. The next experiments focused on a time study to resolve the shortest digestive time for optimal elemental recovery. Two masses of sediment were investigated, 0.25 and 0.7 g, again utilizing aqua regia digestion (4 mL). Maximum recovery was reached after 4 hours of digestion; additional digestion time released no or only minimal amounts of elements from the sediments. The final set of experiments was designed to identify optimal conditions for the total digestion of sediment using a mixture of hydrochloric acid, nitric acid, hydrofluoric acid, hydrogen peroxide, and boric acid. These experiments were designed to determine the optimal volume of hydrofluoric acid needed to achieve a total digestion. Utilizing two masses of sediment 0.25 and 0.5 g and varying the volume of hydrofluoric acid and boric acid. Total digestion was achieved with a minimum volume of 0.5 mL hydrofluoric acid and a .25 g of sediment. Future experiments incorporating the findings in these experiments will be executed using a heated carbon block as the source for thermal energy.

  16. Adhesion of indirect MOD resin composite inlays luted with self-adhesive and self-etching resin cements.

    PubMed

    Inukai, T; Abe, T; Ito, Y; Pilecki, P; Wilson, R F; Watson, T F; Foxton, R M

    2012-01-01

    This study investigated the effect of loading on the bond strength to dentin and microleakage of MOD indirect composite restorations bonded with self-adhesive and self-etching resin cements with or without acid etching of the proximal enamel margins. Class II MOD cavities were prepared in 48 molar teeth into dentin and divided into three groups of 16 teeth. Impressions were taken and indirect composite inlays fabricated (Estenia C & B). The enamel margins of the proximal boxes of half the specimens were phosphoric acid etched, and the inlays were cemented with one of three cements (Panavia F 2.0, SA Cement, or Rely X Unicem). After luting, eight teeth in each cement group were mechanically loaded at 2.5 cycles/s for 250,000 cycles. Unloaded teeth acted as controls. Teeth were stored in Rhodamine B solution for 24 hours, sectioned buccolingually at the proximal boxes to examine microleakage using confocal microscopy, and further sectioned for ?TBS testing of the resin-dentin interface. Analysis of variance was performed to assess the effect of loading and acid etching on microleakage and bond strength. Acid etching had no effect on microleakage. No significant difference in the dentin bond strengths between the three cements existed after loading. Panavia F 2.0 exhibited a significant reduction in bond strength. With regard to microleakage at the proximal boxes, loading had no effect on dye penetration at the cavity floor. However, at the axial walls, loading had a significant deleterious effect on Panavia F 2.0. No difference in microleakage existed between the three cements at both sites before and after loading. In conclusion, the two tested self-adhesive cements exhibited similar bond strengths before and after loading to the self-etching resin cement. Loading reduced dentin bond strengths and increased microleakage at the resin-dentin interface. However, acid etching of the enamel margins had no significant effect on microleakage in the approximal regions of the bonded inlays. PMID:22360367

  17. Bulk filling of Class II cavities with a dual-cure composite: Effect of curing mode and enamel etching on marginal adaptation

    PubMed Central

    Bortolotto, Tissiana; Roig, Miguel; Krejci, Ivo

    2014-01-01

    Objectives: This study attempted to find a simple adhesive restorative technique for class I and II cavities on posterior teeth. Study Design: The tested materials were a self-etching adhesive (Parabond, Coltène/Whaledent) and a dual-cure composite (Paracore, Coltène/Whaledent) used in bulk to restore the cavities. Class II MO cavities were performed and assigned to 4 groups depending on the orthophosphoric acid (H3PO4) conditioning of enamel and polymerization method used (chemical or dual). Specimens were subjected to quantitative marginal analysis before and after thermo-mechanical loading. Results: Higher percentages of marginal adaptation at the total margin length, both before and after thermo-mechanical loading, were found in groups in which enamel was etched with phosphoric acid, without significant differences between the chemically and dual-cured modes. The restorations performance was similar on enamel and dentin, obtaining low results of adaptation on occlusal enamel in the groups without enamel etching, the lowest scores were on cervical dentin in the group with no ortophosphoric acid and self-cured. Conclusions: A dual-cure composite applied in bulk on acid etched enamel obtained acceptable marginal adaptation results, and may be an alternative technique for the restoration of class II cavities. Key words:Dual-cure composite, bulk technique, class II restoration, selective enamel etching, marginal adaptation. PMID:25674316

  18. Rapid Dry Etching Of Photoresists Without Toxic Gases

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R.; Wydeven, Theodore

    1991-01-01

    Experimental dry etching technique strips photoresists from semiconductor wafers without damaging semiconductor materials. Makes use of afterglow existing downstream from plasma generated by radio-frequency electric field. Constituents of afterglow react with sacrificial polymer to make reactive gases that quickly etch-away photoresist. Strips quickly at room temperature; not necessary to heat substrates. No hazardous or toxic chemicals used.

  19. Reactive ion etched substrates and methods of making and using

    DOEpatents

    Rucker, Victor C. (San Francisco, CA); Shediac, Rene (Oakland, CA); Simmons, Blake A. (San Francisco, CA); Havenstrite, Karen L. (New York, NY)

    2007-08-07

    Disclosed herein are substrates comprising reactive ion etched surfaces and specific binding agents immobilized thereon. The substrates may be used in methods and devices for assaying or isolating analytes in a sample. Also disclosed are methods of making the reactive ion etched surfaces.

  20. Evaluation of bond strength of orthodontic brackets without enamel etching

    PubMed Central

    Boruziniat, Alireza; Motaghi, Shiva; Moghaddas, Mohmmadjavad

    2015-01-01

    Background To compare the shear bond strength of brackets with and without enamel etching. Material and Methods In this study, 60 sound premolars were randomly divided into four different groups: 1- TXE group: Enamel etching+Transbond XT adhesive+ Transbond XT composite. 2- TXS group: Transbond plus self-etch adhesive+ Transbond XT composite. 3- PQ1E group: Enamel etching+ PQ1 adhesive+ Transbond XT composite. 4- PQ1 group: PQ1 adhesive+ Transbond XT composite. The shear bond strengths of brackets were evaluated using universal testing machine at cross head speed of 0.5 mm/min. The Adhesive Remnant Index (ARI) was also measured. One-way ANOVA, Tukey’s post hoc, Kruskal-wallis and Mann-Witney U test were used for data analysis. Results There was a significant difference between etched and unetched groups respect to SBS and ARI (p<0.05), however; no significant difference was observed between unetched group and self-etch adhesive group (p>> 0.05). The shear bond strength of PQ1 group was the least but in acceptable range and its ARI was less than other groups. Conclusions PQ1 adhesive can be used for bracket bonding without enamel etching with adequate bond strength and minimal ARI. Key words:Bracket, shear bond strength, filled-adhesive, self-etch adhesive. PMID:26535100

  1. Laser etching: A new technology to identify Florida grapefruit

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Laser labeling of fruits and vegetables is an alternative means to label produce. Low energy CO2 laser beam etches the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allowing for pathogen entry. The long term effects of laser labeling o...

  2. Point Group Determination of Calcium Tartrate by Etch Figure

    NASA Astrophysics Data System (ADS)

    Nakatani, Noriyuki

    1991-11-01

    Etch figures of gel-grown orthorhombic calcium tartrate tetrahydrate crystals have been examined in order to determine the point group symmetry. Making a thorough investigation of etch-figure characters on natural surfaces of rhombic dodecahedron crystals, we reached the firm conclusion that the point group is nonpolar 222.

  3. Differential etching of chalcogenides for infrared photonic waveguide structures

    SciTech Connect

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2007-10-10

    Chemical etching rates for two different chalcogenide glass compositions (As2S3 and As24S38Se38) were studied using sodium hydroxide based etchant solutions. Etching was performed using a variation of standard photolithographic masking and wet-etching techniques. Variations in etch rate with NaOH concentration and glass composition were observed. The depth of etch was characterized using an optical profilometer. Etch rate differences as large as three orders of magnitude between these two glasses were observed at low NaOH concentration (0.053 M). We present a single variable etch rate curve of etch depth per time (nm/s) versus NaOH overall solution concentration (in M) for these two different chalcogenide glasses (As2S3 and As24S38Se38). This technology shows promise for fabricating highly asymmetrical photonic structures and has potential applications in fabricating novel photonic bandgap (PBG) structures that will function in the long-wave infrared (LWIR) regime.

  4. Ga(+) beam lithography for nanoscale silicon reactive ion etching.

    PubMed

    Henry, M D; Shearn, M J; Chhim, B; Scherer, A

    2010-06-18

    By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam (FIB) and an inductively coupled plasma reactive ion etcher (ICP-RIE). Silicon etch masks are patterned via Ga(+) ion implantation in a FIB and then anisotropically etched in an ICP-RIE using fluorinated etch chemistries. We determine the critical areal density of the implanted Ga layer in silicon required to achieve a desired etch depth for both a Pseudo Bosch (SF(6)/C(4)F(8)) and cryogenic fluorine (SF(6)/O(2)) silicon etching. High fidelity nanoscale structures down to 30 nm and high aspect ratio structures of 17:1 are demonstrated. Since etch masks may be patterned on uneven surfaces, we utilize this lithography to create multilayer structures in silicon. The linear selectivity versus implanted Ga density enables grayscale lithography. Limits on the ultimate resolution and selectivity of Ga lithography are also discussed. PMID:20484788

  5. Feasibility of atomic layer etching of polymer material based on sequential O{sub 2} exposure and Ar low-pressure plasma-etching

    SciTech Connect

    Vogli, Evelina; Metzler, Dominik; Oehrlein, Gottlieb S.

    2013-06-24

    We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O{sub 2} exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with Almost-Equal-To 0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

  6. Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching

    NASA Astrophysics Data System (ADS)

    Vogli, Evelina; Metzler, Dominik; Oehrlein, Gottlieb S.

    2013-06-01

    We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O2 exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with ?0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

  7. Reactive ion etching of indium-tin-oxide films

    SciTech Connect

    Calahorra, Z.; Minami, E.; White, R.M.; Muller, R.S. . Dept. of Electrical Engineering and Computer Sciences)

    1989-06-01

    Oxygen deficient indium-tin-oxide (ITO) films exhibit a high electrical conductivity combined with high transmission in the visible spectral region. This combination of properties has led to its many electo-optic applications, mainly as transparent electrode in various devices. To take full advantage of ITO films in current and future devices, fine-line patterning methods must be developed for this material. The wet etch techniques that are commonly used in etching of ITO are not satisfactory. Reactive ion etching (RIE) combines the advantages of sputter etching, which is highly anisotropic but not selective, with those of plasma etching, which is selective but not anisotropic. The combined process (RIE) is both selective and highly anisotropic. This paper describes a RIE process for ITO using HI gas as an etchant.

  8. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  9. Highly selective electroplated nickel mask for lithium niobate dry etching

    NASA Astrophysics Data System (ADS)

    Benchabane, Sarah; Robert, Laurent; Rauch, Jean-Yves; Khelif, Abdelkrim; Laude, Vincent

    2009-05-01

    A sulfur hexafluoride based reactive ion etching process allowing to etch several micron deep holes with diameters of the order of a few microns in lithium niobate is reported. Etching of deep structures with aspect ratios up to 1.5 was made possible through the use of an electroplated nickel mask exhibiting a selectivity as high as 20 with respect to lithium niobate. Several crystallograpic orientations were investigated, although particular interest was paid to Y-axis oriented substrates. Photoresist as well as metal masks were also tested and their selectivity was compared. The influence of process parameters such as applied rf power or operating pressure on the sidewall slope angle of the etched patterns was investigated. The technique has been successfully applied to the fabrication of phononic crystals consisting of periodical arrays of 9 ?m diameter, 10 ?m deep holes, with a 10 ?m period, and presenting sidewall angles as high as 73 etched in Y-axis oriented lithium niobate.

  10. Visible-laser etching of refractory metals by surface modification

    SciTech Connect

    Rothschild, M.; Sedlacek, J.H.C.; Ehrlich, D.J.

    1987-09-01

    A two-step laser etching technique for Mo and W films is described. In the first step, the laser modifies the chemical composition of the metal surface; in the second, deep etching of the pre-exposed areas is by broad-area heating in a reactive ambient. The surface modification takes place in the presence of Cl/sub 2/, which etches the native-metal oxide and replaces it with a more volatile metal halide. Deep etching is performed with NF/sub 3/. Since the native oxide is resistant toward etching with NF/sub 3/, the second step is selective with respect to the laser-halogenated area and is, in effect, a chemical amplification of the surface modification. Well-delineated, high-contrast patterns are obtained with this method.

  11. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  12. High rate ECR etching of III-V nitride materials

    SciTech Connect

    Shul, R.J.; Howard, A.J.; Kilcoyne, S.P.; Pearton, S.J.; Abernathy, C.R.; Vartuli, C.B.; Barnes, P.A.; Bozack, M.J.

    1994-12-31

    The III-V nitride compound semiconductors are attracting considerable attention for blue and ultraviolet light emitting diodes (LEDs) and lasers as well as high temperature electronics due to their wide band gaps and high dielectric constants. The recent progress observed in the growth of these materials has not been matched by progress in processing techniques to fabricate more highly sophisticated devices. Patterning these materials has been especially difficult due to the relatively inert chemical nature of the group-III nitrides. The authors review dry etch techniques which have been used to pattern these materials including electron cyclotron resonance (ECR), reactive ion etch (RIE), and chemically assisted ion beam etching (CAIBE). ECR etch rates greater than 3,800 {angstrom}/min for InN, 3,500 {angstrom}/min for GaN, and 1,170 A/min for AlN are reported. Etch anisotropy, surface morphology, and near-surface stoichiometry will be discussed.

  13. Study of high aspect ratio silicon etching based on ICP

    NASA Astrophysics Data System (ADS)

    Hu, Jiang; Zhou, Shun; Hu, Shuai; Zhu, Yufeng; Liu, Weiguo

    2015-02-01

    The etching process of the high aspect ratio of Si deep trench is the key technology in MEMS field. Having used Oxford Plasmalabsystem100 ICP-180 etcher with SF6 and C4F8 as the etching gas, the influence on the deep Si etching process of Bosch under different ICP power, bias voltage, temperature, pressure and other parameters has been studied. The experimental result shows that under appropriate parameters, the high-aspect ratio of silicon deep trench is greater than 26:1, the sidewalls' vertical degree is 89.9°, and the etching rate is greater than 2μm/min the high aspect ratio of SOI deep trench is greater than 28:1, the sidewalls' vertical degree is 89.7°, and the etching rate is greater than 2μm/min.

  14. Consideration of VT5 etch-based OPC modeling

    NASA Astrophysics Data System (ADS)

    Lim, ChinTeong; Temchenko, Vlad; Kaiser, Dieter; Meusel, Ingo; Schmidt, Sebastian; Schneider, Jens; Niehoff, Martin

    2008-03-01

    Including etch-based empirical data during OPC model calibration is a desired yet controversial decision for OPC modeling, especially for process with a large litho to etch biasing. While many OPC software tools are capable of providing this functionality nowadays; yet few were implemented in manufacturing due to various risks considerations such as compromises in resist and optical effects prediction, etch model accuracy or even runtime concern. Conventional method of applying rule-based alongside resist model is popular but requires a lot of lengthy code generation to provide a leaner OPC input. This work discusses risk factors and their considerations, together with introduction of techniques used within Mentor Calibre VT5 etch-based modeling at sub 90nm technology node. Various strategies are discussed with the aim of better handling of large etch bias offset without adding complexity into final OPC package. Finally, results were presented to assess the advantages and limitations of the final method chosen.

  15. In-situ diagnostics and characterization of etch by-product deposition on chamber walls during halogen etching of silicon

    NASA Astrophysics Data System (ADS)

    Rastgar, Neema; Sriraman, Saravanapriyan; Marsh, Ricky; Paterson, Alex

    2014-10-01

    Plasma etching is a critical technology for nanoelectronics fabrication, but the use of a vacuum chamber limits the number of in-situ, real-time diagnostics measurements that can be performed during an etch process. Byproduct deposition on chamber walls during etching can affect the run-to-run performance of an etch process if there is build-up or change of wall characteristics with time. Knowledge of chamber wall evolution and the composition of wall-deposited films are critical to understanding the performance of plasma etch processes, and an in-situ diagnostics measurement is useful for monitoring the chamber walls in real time. We report the use of attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) to perform in-situ diagnostics of a vacuum chamber's walls during plasma etching. Using ATR-FTIR, we are able to monitor the relative thickness and makeup of chamber wall deposits in real time. We then use this information to develop a chamber wall cleaning process in order to maintain reproducible etching conditions from wafer to wafer. In particular, we report mid-IR (4000-650 cm-1) absorption spectra of chamber wall-deposited silicon byproducts formed during halogen etching of silicon wafers.

  16. Optical diagnostic instrument for monitoring etch uniformity during plasma etching of polysilicon in a chlorine-helium plasma

    SciTech Connect

    Hareland, W.A.; Buss, R.J.

    1993-06-01

    Nonuniform etching is a serious problem in plasma processing of semiconductor materials and has important consequences in the quality and yield of microelectronic components. In many plasmas, etching occurs at a faster rate near the periphery of the wafer, resulting in nonuniform removal of specific materials over the wafer surface. This research was to investigate in situ optical diagnostic techniques for monitoring etch uniformity during plasma processing of microelectronic components. We measured 2-D images of atomic chlorine at 726 nm in a chlorine-helium plasma during plasma etching of polysilicon in a parallel-plate plasma etching reactor. The 3-D distribution of atomic chlorine was determined by Abel inversion of the plasma image. The experimental results showed that the chlorine atomic emission intensity is at a maximum near the outer radius of the plasma and decreases toward the center. Likewise, the actual etch rate, as determined by profilometry on the processed wafer, was approximately 20% greater near the edge of the wafer than at its center. There was a direct correlation between the atomic chlorine emission intensity and the etch rate of polysilicon over the wafer surface. Based on these analyses, 3-D imaging would be a useful diagnostic technique for in situ monitoring of etch uniformity on wafers.

  17. CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa

    NASA Astrophysics Data System (ADS)

    Della Casa, Pietro; Maadorf, Andre; Zeimer, Ute; Weyers, Markus

    2016-01-01

    In-situ etching of GaAs with CBr4 in metalorganic vapor phase epitaxy has been investigated at different temperatures using in-situ reflectivity to measure the etch rates. Deep (150 nm) etching of epitaxially-grown GaAs leads to the development of etch pits on the surface, corresponding to the emerging points of threading dislocations. Addition of trimethylgallium (TMGa) leads to a linear superposition of growth and etching. Trimethylaluminium (TMAl) added in moderate quantity enhances the etch rate and inhibits the development of etch pits. A model description for the enhanced etch rate is presented.

  18. E-beam inspection of EUV mask defects: To etch or not to etch?

    NASA Astrophysics Data System (ADS)

    Bonam, Ravi; Tien, Hung-Yu; Park, Chanro; Halle, Scott; Wang, Fei; Corliss, Daniel; Fang, Wei; Jau, Jack

    2014-04-01

    EUV Lithography is aimed to be inserted into mainstream production for sub-20nm pattern fabrication. Unlike conventional optical lithography, frequent defectivity monitors (adders, repeaters etc.) are required in EUV lithography. Due to sub-20nm pattern and defect dimensions e-beam inspection of critical pattern areas is essential for yield monitor. In previous work we showed sub-10nm defect detection sensitivity1 on patterned resist wafers. In this work we report 8-10 improvement in scan rates of etched patterns compared to resist patterns without loss in defect detection sensitivity. We observed good etch transfer of sub-10nm resist features. A combination of smart scan strategies with improved etched pattern scan rates can further improve throughput of e-beam inspection. An EUV programmed defect mask with Line/Space, Contact patterns was used to evaluate printability of defects and defect detection (Die-Die and Die-Database) capability of the e-beam inspection tool. Defect inspection tool parameters such as averaging, threshold value were varied to assess its detection capability and were compared to previously obtained results on resist patterns.

  19. Direct Visualization of Etching Trajectories in Metal-Assisted Chemical Etching of Si by the Chemical Oxidation of Porous Sidewalls.

    PubMed

    Yoon, Sung-Soo; Khang, Dahl-Young

    2015-09-29

    We demonstrate a simple method for the visualization of trajectories traced by noble metal nanoparticles during metal-assisted chemical etching (MaCE) of Si. The nanoporous Si layer formed around drilled pores is converted into SiO2 by simple chemical oxidation. Etch removal of the remaining Si using alkali hydroxide leaves SiO2 nanostructures that are the exact replica of those drilled pores or etching trajectories. The differences in etching characteristics between Ag and Au have been investigated using the proposed visualization method. The shape and chemical stability of metal nanoparticles used for MaCE have been found to be critical in determining etching paths. The proposed method would be very helpful in studying the fundamental mechanism of MaCE as well as in micro/nanostructuring of the Si surface for various applications. This approach can also be used for the generation of straight or helical SiO2 nanotubes. PMID:26352208

  20. Plasma reactive ion etching-induced damage in gallium nitride

    NASA Astrophysics Data System (ADS)

    Mouffak, Zoulikha

    Characterization of the reactive ion etching (RIE) damage in GaN has been conducted using I-V characteristics of Schottky structures made on etched GaN samples, photoluminescence and X-ray photoelectron spectroscopy (XPS). In the first part of this work, we investigated RIE- and Photo-Assisted RIE (PA-RIE)-induced damage in GaN using Schottky structures and a BCl 3/Cl2/N2 gas mixture. Schottky diode IN characteristics following different RF powers and exposure times showed significant changes due to the plasma process. There was evidence of reduced damage due to the presence of light that we explained by a photo-enhanced defect diffusion phenomenon leaving a cleaner near-surface region. In the second part of this work, we were interested in the effect of nitrogen on the etching process, and in the resulting damage. n-GaN samples were etched with RIE in BCl3/Cl 2/Ar and BCl3/Cl2/N2 plasmas. Replacing argon by nitrogen in the plasma chemistry resulted in better etch rates, and in addition reduced etch damage for relatively low values of the plasma power. By treating the samples in a nitrogen plasma following etching, we dramatically reduced surface damage, as determined from Schottky IV characteristic measurements. Further, XPS analysis showed that the N2 post-etch nitrogen decreased the Ga/N ratio. These results suggest that much of the damage induced by RIE plasma etching comes from a nitrogen loss mechanism. Photoluminescence (PL) experiments showed an increased intensity of the donor-acceptor (D-A) peak and a reduced band-edge peak due to damage. That phenomenon is reduced in the case of samples treated with a N2 post-etch plasma, indicating that etching damage of n-GaN enhances a defect level population that participates in the D-A transition. The characterization results lead to the conclusion that a significant part of the etch-induced damage is most likely related to donors created by nitrogen vacancies which result from the N2 loss from the GaN surface during the RIE etching.

  1. Role of nitrogen in the downstream etching of silicon nitride

    SciTech Connect

    Blain, M.G.; Meisenheimer, T.L.; Stevens, J.E.

    1996-07-01

    Chemical downstream etching of silicon nitride (Si{sub 3}N{sub 4}) requires the addition of nitrogen to the discharge for obtaining efficient etch rates. A 10{percent} addition of N{sub 2} to a CF{sub 4}/O{sub 2} discharge (CF{sub 4}/O{sub 2} = 1.2, 0.525 Torr) causes a factor of 6 increase in the Si{sub 3}N{sub 4} etch rate and a 8{percent} decrease in the silicon dioxide etch rate. The result is selectivities approaching 9:1. Importantly, the conversion of CF{sub 4} to F and F-containing reactive species by the discharge decreases or remains constant as nitrogen is added to the discharge mix, indicating that the etching reaction is not limited by delivery of these species to the substrate. By measuring the amount of NO and NO{sub 2} in the etch chamber, it is found that the NO concentration increases by a factor of 6 as N{sub 2} is added, while the amount of NO{sub 2} remains small and constant. The NO signal is significantly reduced during nitride etching compared to the signal observed during a discharge with an empty etch chamber, implying that the increase in Si{sub 3}N{sub 4} etch rate is related to the formation of NO in the discharge. This view is consistent with the observation that an NF{sub 3} plasma in a quartz discharge tube results in a nitride etch rate which is a factor of 2 higher than for the same discharge in a sapphire tube. The conclusion is that the oxygen liberated by erosion of the quartz tube allows the formation of NO. That NO is a key Si{sub 3}N{sub 4} etch reactant was confirmed by performing a series of experiments in which N{sub 2}, NO, NO{sub 2}, and N{sub 2}O were injected into the discharge and then downstream in the reaction chamber during a CF{sub 4}/O{sub 2} discharge. Nitride etch rates increased significantly upon injection of NO into both discharge and etch chamber as compared to injection of the other N{sub {ital x}}O{sub {ital y}} species. {copyright} {ital 1996 American Vacuum Society}

  2. Solid polymer electrolyte composite membrane comprising plasma etched porous support

    DOEpatents

    Liu, Han; LaConti, Anthony B.

    2010-10-05

    A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

  3. Comparision of Shear Bond Strength of Stainless Steel and Ceramic Brackets at 24 Hours after Etching Enamel with Different Proportions of Acidulated Phosphate Fluoride

    PubMed Central

    Abinaya; Karthikeyan; Sarvanan; Vikram, Raj

    2014-01-01

    Aims and Objectives: To evaluate and compare the shear bond strength of stainless steel brackets and ceramic brackets at 24h after etching the enamel with acidulated phosphate fluoride gel (1.23% APF) at different proportions (40%,30%,20%) incorporated in conventional etchant (37% phosphoric acid). Materials and Methods: Eighty premolars (maxillary and mandibular first and second premolars) extracted for orthodontic purpose has been selected for the study and samples were divided into 4 groups containing 10 teeth each. Comprised of teeth etched Group 1 with 40% of APF gel etchant is Group 2 teeth etched with 30% of APF gel in Group 3 teeth etched with 20% of APF gel etchant and Group 4 teeth were etched with conventional etchant (37% phosphoric acid). Results: The experimental group of Acidulated Phosphate Fluoride (APF) at different proportion (40%, 30%, 20%) incorporated with etchant application for 40s on the enamel surface at 24h indicated that group 4 showed the higher bond strength of all other remaining groups and the groups 1, 2 and 3 showed satisfactory bond strength. The statistical evaluation also revealed that the bond strength of control group (37% phosphoric acid) was greater than those of experimental groups. Conclusion: The present study results shows that the ceramic brackets have higher bond strength than stainless steel brackets (material wise). PMID:25302260

  4. Toward a durable superhydrophobic aluminum surface by etching and ZnO nanoparticle deposition.

    PubMed

    Rezayi, Toktam; Entezari, Mohammad H

    2016-02-01

    Fabrication of suitable roughness is a fundamental step for acquiring superhydrophobic surfaces. For this purpose, a deposition of ZnO nanoparticles on Al surface was carried out by simple immersion and ultrasound approaches. Then, surface energy reduction was performed using stearic acid (STA) ethanol solution for both methods. The results demonstrated that ultrasound would lead to more stable superhydrophobic Al surfaces (STA-ZnO-Al-U) in comparison with simple immersion method (STA-ZnO-Al-I). Besides, etching in HCl solution in another sample was carried out before ZnO deposition for acquiring more mechanically stable superhydrophobic surface. The potentiodynamic measurements demonstrate that etching in HCl solution under ultrasound leads to superhydrophobic surface (STA-ZnO-Al(E)-U). This sample shows remarkable decrease in corrosion current density (icorr) and long-term stability improvement versus immersion in NaCl solution (3.5%) in comparison with the sample prepared without etching (STA-ZnO-Al-U). Scanning electron micrograph (SEM) and energy-dispersive X-ray spectroscopy (EDX) confirmed a more condense and further particle deposition on Al substrate when ultrasound was applied in the system. The crystallite evaluation of deposited ZnO nanoparticles was carried out using X-ray diffractometer (XRD). Finally, for STA grafting verification on Al surface, Fourier transform infrared in conjunction with attenuated total reflection (FTIR-ATR) was used as a proper technique. PMID:26513735

  5. Long-term clinical failure rate of molar tubes bonded with a self-etching primer.

    PubMed

    Pandis, Nikolaos; Christensen, Lars; Eliades, Theodore

    2005-11-01

    The purpose of this study was to assess the long-term in vivo failure rate of tubes bonded to first and second molars with a self-etching primer (SEF). A total of 810 molar tubes (414 first molar and 396 second molar) were bonded on 135 patients (56 male, 79 female; mean age 14 years) with the 3M Transbond Plus Self Etching Primer. The first-time failures of the tubes were recorded for a mean period of 26 months (range 23-29 months). Failure rates per jaw (maxilla-mandible), tooth (first and second molar), and quadrant (left, right) were analyzed with the chi(2) at alpha = 0.05 level of significance. Significant differences were found in the failure rate between first and second molars (9.66% vs 20%, respectively) as well as maxillary and mandibular molars (7.5% vs 21%, respectively). The combined, total failure rate for first and second molars was 14.80%. No difference was found between male and female failure rates for the molar tubes. First-molar tubes bonded with an SEF may show failure rates comparable with those reported in the literature for tubes bonded with conventional acid etching. PMID:16448245

  6. An All-in-One Adhesive Does Not Etch beyond Hybrid Layers

    PubMed Central

    Kim, J.; Mai, S.; Carrilho, M.R.; Yiu, C.K.Y.; Pashley, D.H.; Tay, F.R.

    2010-01-01

    Continuous etching of aggressive all-in-one adhesives occurs in wet dentin tubules after polymerization of the adhesives. This study challenged the hypothesis that unpolymerized acidic monomers from an aggressive all-in-one self-etching adhesive continue to etch beyond dentin hybrid layers. Dentin surfaces bonded with Adper Prompt L-Pop were sectioned into 0.3-mm-thick slabs. Some of the slabs were stored in water (pH 6.8) or glycine buffer (pH 11.1) for six weeks and then examined by CLSM, SEM, and TEM. The rest were immersed in a biomimetic remineralizing medium for up to 4 months. Morphologic analysis indicated no difference in demineralization thickness between the two 6-week storage groups. However, increased permeability and loss of integrity occurred along the base of the hybrid layers in the glycine buffer group, but not in the water storage group. These findings were also confirmed by the results of biomimetic remineralization along the bases of those hybrid layers. PMID:20200420

  7. The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

    PubMed

    Lee, Chang-Hyoung; Cho, Young-Lae; Lee, Won-Pyo; Suh, Su-Jeong

    2014-11-01

    Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise. PMID:25958585

  8. Manganese-tuned chemical etching of a platinum-copper nanocatalyst with platinum-rich surfaces

    NASA Astrophysics Data System (ADS)

    Huang, Y. Y.; Zhao, T. S.; Zhao, G.; Yan, X. H.; Xu, K.

    2016-02-01

    This work presents a modified chemical etching strategy to fabricate binary metal nanocatalysts with large active areas. The strategy employs PtCu alloy particles with Pt-rich outer layers as the precursor and manganese species to manipulate the acid leaching processes. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy techniques are used to analyze the catalyst structures and the tuning mechanism of manganese species during etching. It is found that the introduction of manganese species allows more Pt active sites to be formed onto the catalyst surface after etching, possibly due to reduction in the number of Pt atoms enclosed inside particles. The electrochemically active surface area of the synthetic MnA-PtCu/C catalyst increases by 90% relative to commercial Pt/C catalyst. As a result of the increase in active areas and the additional promotion effects by Cu, the MnA-PtCu/C catalyst reveals a methanol oxidation activity 1.7 and 4.0 times higher than that of the synthetic PtCu/C and commercial Pt/C catalysts, respectively.

  9. Effects of chlorhexidine in self-etching adhesive: 24 hours results.

    PubMed

    Nishitani, Yoshihiro; Hosaka, Keiichi; Hoshika, Tomohiro; Yoshiyama, Masahiro; Pashley, David H

    2013-01-01

    It is known that chlorhexidine (CHX) does not inhibit micro-tensile bond strengths (MTBS) when it is used in etch-and-rinse adhesives. In that technique, CHX is applied to dentin as a primer after phosphoric acid-etching before bonding with Single Bond. It would be more convenient if it is possible to incorporate CHX into the adhesive. The purpose of this study was to compare the MTBS and the FT-IR percent conversion of an all-in-one self-etching adhesives contained varying concentration of CHX. Extracted human third molars were bonded with a control all-in-one adhesive or experimental versions containing 0.5, 1, 2 or 5% CHX. The MTBS and the percent conversion of experimental adhesives containing up to 1% CHX were not significantly CHX-free control adhesives. However, addition of 2 or especially 5% CHX experimental adhesives produced significant reductions in both the MTBS and the percent conversion. PMID:23719003

  10. Ultrasensitive Visual Sensing of Molybdate Based on Enzymatic-like Etching of Gold Nanorods.

    PubMed

    Zhang, Zhiyang; Chen, Zhaopeng; Chen, Lingxin

    2015-08-25

    Here, we have developed a novel approach to the visual detection of molybdate with high sensitivity and selectivity in aqueous media based on the combination of catalytic formation of iodine and iodine-mediated etching of gold nanorods. In weak acid solution, like peroxidase, molybdate can catalyze the reaction between H2O2 and I(-) to produce I2, a moderate oxidant, which then etches gold nanorods preferentially along the longitudinal direction in the presence of hexadecyltrimethylammonium bromide. The etching results in the longitudinal localized surface plasmon resonance extinction peak shifts to short wavelength, accompanied by a color change from blue to red. Under optimal conditions, this sensor exhibits good sensitivity with a detection limit of 1.0 nM. The approach is highlighted by its high selectivity and tolerance to interference, which enables the sensor to detect molybdate directly in real samples, such as tap water, drinking water, and seawater. In addition, perhaps the proposed sensing strategy can be also used for other targets that can selectively regulate the formation of I2 under given conditions. PMID:26226196

  11. Etching of oxynitride thin films using inductively coupled plasma

    NASA Astrophysics Data System (ADS)

    Kim, Byungwhan; Lee, Dukwoo; Kim, Nam Jung; Lee, Byung Teak

    2005-05-01

    In this study, silicon oxynitride (SiON) has been etched in a C2F6 inductively coupled plasma. The process parameters examined include a radio frequency source power, bias power, pressure, and C2F6 flow rate. For process optimization, a statistical experimental design was employed to investigate parameter effects under various plasma conditions. The etch rate increased almost linearly with increasing the source or bias power. Main effect analysis revealed that the etch rate is dominated by the source power. The C2F6 flow rate exerted the least impact on both etch rate and profile angle. It was estimated that the C2F6 effect is transparent only as the etchant is supplied sufficiently. Depending on the pressure levels, the etch rate varied in a complicated way. Parameter effects on the profile angle were very small and the profile angle varied between 83° and 87° for all etching experiments. In nearly all experiments, microtrenching was observed. The etch rate and profile angle, optimized at 1000 W source power, 30 W bias power, 6 mTorr pressure, and 60 sccm C2F6 flow rate, are 434 nm/min and 86°, respectively.

  12. Etching of oxynitride thin films using inductively coupled plasma

    SciTech Connect

    Kim, Byungwhan; Lee, Dukwoo; Kim, Nam Jung; Lee, Byung Teak

    2005-05-01

    In this study, silicon oxynitride (SiON) has been etched in a C{sub 2}F{sub 6} inductively coupled plasma. The process parameters examined include a radio frequency source power, bias power, pressure, and C{sub 2}F{sub 6} flow rate. For process optimization, a statistical experimental design was employed to investigate parameter effects under various plasma conditions. The etch rate increased almost linearly with increasing the source or bias power. Main effect analysis revealed that the etch rate is dominated by the source power. The C{sub 2}F{sub 6} flow rate exerted the least impact on both etch rate and profile angle. It was estimated that the C{sub 2}F{sub 6} effect is transparent only as the etchant is supplied sufficiently. Depending on the pressure levels, the etch rate varied in a complicated way. Parameter effects on the profile angle were very small and the profile angle varied between 83 deg. and 87 deg. for all etching experiments. In nearly all experiments, microtrenching was observed. The etch rate and profile angle, optimized at 1000 W source power, 30 W bias power, 6 mTorr pressure, and 60 sccm C{sub 2}F{sub 6} flow rate, are 434 nm/min and 86 deg., respectively.

  13. Super-selective cryogenic etching for sub-10 nm features

    NASA Astrophysics Data System (ADS)

    Liu, Zuwei; Wu, Ying; Harteneck, Bruce; Olynick, Deirdre

    2013-01-01

    Plasma etching is a powerful technique for transferring high-resolution lithographic masks into functional materials. Significant challenges arise with shrinking feature sizes, such as etching with thin masks. Traditionally this has been addressed with hard masks and consequently additional costly steps. Here we present a pathway to high selectivity soft mask pattern transfer using cryogenic plasma etching towards low-cost high throughput sub-10 nm nanofabrication. Cryogenic SF6/O2 gas chemistry is studied for high fidelity, high selectivity inductively coupled plasma etching of silicon. Selectivity was maximized on large features (400 nm-1.5 ?m) with a focus on minimizing photoresist etch rates. An overall anisotropic profile with selectivity around 140:1 with a photoresist mask for feature size 1.5 ?m was realized with this clean, low damage process. At the deep nanoscale, selectivity is reduced by an order of magnitude. Despite these limits, high selectivity is achieved for anisotropic high aspect ratio 10 nm scale etching with thin polymeric masks. Gentler ion bombardment resulted in planar-dependent etching and produced faceted sub-100 nm features.

  14. Cobalt-mediated crystallographic etching of graphite from defects.

    PubMed

    Wang, Rui; Wang, Jiayi; Gong, Hao; Luo, Zhiqiang; Zhan, Da; Shen, Zexiang; Thong, John T L

    2012-08-20

    Herein is reported a study of Co-assisted crystallographic etching of graphite in hydrogen environment at temperatures above 750 C. Unlike nanoparticle etching of graphite surface that leaves trenches, the Co could fill the hexagonal or triangular etch-pits that progressively enlarge, before finally balling-up, leaving well-defined etched pits enclosed by edges oriented at 60 or 120 relative to each other. The morphology and chirality of the etched edges have been carefully studied by transmission electron microscopy and Raman analysis, the latter indicating zigzag edges. By introducing defects to the graphite using an oxygen plasma or by utilizing the edges of graphene/graphite flakes (which are considered as defects), an ability to define the position of the etched edges is demonstrated. Based on these results, graphite strips are successfully etched from the edges and graphitic ribbons are fabricated which are enclosed by purely zigzag edges. These fabricated graphitic ribbons could potentially be isolated layer-by-layer and transferred to a device substrate for further processing into graphene nanoribbon transistors. PMID:22539414

  15. High-density etching of group III nitride ternary films

    SciTech Connect

    Shul, R.J.; Howard, A.J.; Pearton, S.J.; Abernathy, C.R.; Vartuli, C.B.

    1996-10-01

    Due to their wide bandgaps and high dielectric constants, group III nitrides have made significant impact on the compound semiconductor community as blue, green, and ultraviolet light emitting diodes and for their potential use in laser structures and high temperature electronics. Processing of these materials, in particular wet and dry etching, has proven to be extremely difficult due to their inert chemical nature. The authors report electron cyclotron resonance etching of In{sub x}Ga{sub 1{minus}x}N and In{sub 0.75}Al{sub 0.25}N as a function of temperature, RF power, pressure, and microwave power. Etch conditions were characterized for rate, profile, and sidewall and surface morphology and compared to etch data for GaN, InN, and AlN. Atomic force microscopy was used to quantify root-mean-square roughness of the etched surfaces. The authors observed consistent trends for the InAlN films where the etch rates increased with increasing concentration of In. The trends were less consistent for the InGaN etch rates.

  16. Porous silicon formation during Au-catalyzed etching

    SciTech Connect

    Algasinger, Michael; Bernt, Maximilian; Koynov, Svetoslav; Stutzmann, Martin

    2014-04-28

    The formation of black nano-textured Si during the Au-catalyzed wet-chemical etch process was investigated with respect to photovoltaic applications. Cross-sectional scanning electron microscopy (SEM) images recorded at different stages of the etch process exhibit an evolution of a two-layer structure, consisting of cone-like Si hillocks covered with a nano-porous Si (np-Si) layer. Optical measurements confirm the presence of a np-Si phase which appears after the first ?10?s of the etch process and continuously increases with the etch time. Furthermore, the etch process was investigated on Si substrates with different doping levels (?0.01100 ? cm). SEM images show a transition from the two-layer morphology to a structure consisting entirely of np-Si for higher doping levels (<0.1 ? cm). The experimental results are discussed on the basis of the model of a local electrochemical etch process. A better understanding of the metal-catalyzed etch process facilitates the fabrication of black Si on various Si substrates, which is of significant interest for photovoltaic applications.

  17. Plasma Etching - The Challenges Ahead in Enabling Nanoelectronics

    NASA Astrophysics Data System (ADS)

    Gottscho, Richard

    2011-10-01

    Plasma etching has enabled the perpetuation of Moore's Law from >1 ?m to now less than 20 nm. More than ever, plasma etching is used to enable the extension of semiconductor device fabrication into the nanoelectronics age. Etching is used to compensate for lithographic limitations in resolution and line width roughness; more recently, etching is used to compensate for non-uniformities in up-stream deposition processes. Yet, plasma etching has also pushed against fundamental limitations for many years: e.g., aspect ratio and more generally pattern dependent etching, atomic-scale mixing, and wafer-edge discontinuities. In this talk, I will review the origins of these limitations and what options are available going forward to circumvent them. Pulsed plasma technology, whereby a temporal separation of ion and neutral flux to the wafer is crudely achieved, has proved beneficial for reducing charging effects that contribute to aspect ratio dependent etching. Pulsing also enables tuning plasma etch processes from a neutral-limited regime to an ion-limited regime and thereby enables a more effective usage of the anisotropic transport of ions into nano-structures. Selectivity is arguably an even larger challenge as requirements for fabrication of the most advanced logic devices demand atomic layer etching. Is this feasible? Modulated plasma processing has shown some process in improving stop-layer selectivity, but how far can this method be applied? Finally, I will review the long-standing issues with finite wafer size and how the industry has coped to date with the trade-offs imposed by discontinuities on the wafer edge.

  18. Light-Cured Self-Etch Adhesives Undergo Hydroxyapatite-Triggered Self-Cure.

    PubMed

    Liu, Y; Bai, X; Liu, Y W; Wang, Y

    2016-03-01

    Light cure is a popular mode of curing for dental adhesives. However, it suffers from inadequate light delivery when the restoration site is less accessible, in which case a self-cure mechanism is desirable to salvage any compromised polymerization. We previously reported a novel self-cure system mediated by ethyl 4-(dimethylamino)-benzoate (4E) and hydroxyapatite (HAp). The present work aims to investigate if such self-cure phenomenon takes place in adhesives that underwent prior inadequate light cure and to elucidate if HAp released from the dental etching process is sufficient to trigger it. Model self-etch adhesives were formulated with various components, including bis[2-methacryloyloxy)ethyl]-phosphate (2MP) as acidic monomer and trimethylbenzoyl-diphenylphosphine oxide (TPO) as photoinitiator. In vitro evolution of degree of conversion (DC) of HAp-incorporated adhesives was monitored by infrared spectroscopy during light irradiation and dark storage. Selected adhesives were allowed to etch and extract HAp from enamel, light-cured in situ, and stored in the dark, after which Raman line mapping was used to obtain spatially resolved DC across the enamel-resin interface. Results showed that TPO+4E adhesives reached DC similar to TPO-only counterparts upon completion of light irradiation but underwent another round of initiation that boosted DC to ~100% regardless of HAp level or prior light exposure. When applied to enamel, TPO-only adhesives had ~80% DC in resin, which gradually descended to ~50% in enamel, whereas TPO+4E adhesives consistently scored ~80% DC across the enamel-resin interface. These observations suggest that polymerization of adhesives that underwent insufficient light cure is salvaged by the novel self-cure mechanism, and such salvaging effect can be triggered by HAp released from dental substrate during the etching process. PMID:26635279

  19. Selectively-etched nanochannel electrophoretic and electrochemical devices

    DOEpatents

    Surh, Michael P.; Wilson, William D.; Barbee, Jr., Troy W.; Lane, Stephen M.

    2006-06-27

    Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

  20. Selectively-etched nanochannel electrophoretic and electrochemical devices

    SciTech Connect

    Surh, Michael P.; Wilson, William D.; Barbee, Jr., Troy W.; Lane, Stephen M.

    2004-11-16

    Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.