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Sample records for hydrogen plasma etching

  1. Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

    SciTech Connect

    Hansen, T. A. R.; Weber, J. W.; Colsters, P. G. J.; Mestrom, D. M. H. G.; Sanden, M. C. M. van de; Engeln, R.

    2012-07-01

    The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (<2 eV) high flux plasmas are investigated with spectroscopic ellipsometry. The results indicate a synergistic effect for the etch rate between argon ions and atomic hydrogen, even at these extremely low kinetic energies. Ion-assisted chemical sputtering is the primary etch mechanism in both Ar/H{sub 2} and pure H{sub 2} plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

  2. Silicon homojunction solar cells via a hydrogen plasma etching process

    NASA Astrophysics Data System (ADS)

    Xiao, S. Q.; Xu, S.; Zhou, H. P.; Wei, D. Y.; Huang, S. Y.; Xu, L. X.; Sern, C. C.; Guo, Y. N.; Khan, S.; Xu, Y.

    2013-03-01

    We report on the one-step formation of an efficient Si homojunction solar cell produced by a simple exposure of p-type Si wafers to low-temperature inductively coupled hydrogen plasma. The formation of oxygen thermal donors during hydrogen plasma treatment is responsible for the conductivity type conversion and the final formation of Si homojunction. The hydrogen plasma etching with suppressed heavy ion bombardment results in a relatively flat surface, which is favourable for deposition of passivation layers such as silicon nitride. The integrated Si homojunction solar cell consisting of Al/p-c-Si/n-c-Si/SiN/Al-grid has demonstrated a maximum photovoltaic conversion efficiency of 13.6%.

  3. Stability and etching of titanium oxynitride films in hydrogen microwave plasma

    SciTech Connect

    Do Hien; Yen, Tzu-Chun; Chang Li

    2013-07-15

    Epitaxial titanium oxynitride (TiNO) films deposited on MgO by pulsed laser deposition were treated in hydrogen microwave plasma. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to examine the stability and etching of TiNO which strongly depended on hydrogen gas pressure. TiNO was very chemically stable and remained with good crystallinity under hydrogen pressure below 5300 Pa. With increase of pressure, it may lead to the formation of etch pits in inverse pyramid shape. The etch mechanism as well as the effects of gas pressure and etching time are also presented.

  4. Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Abautret, J.; Evirgen, A.; Perez, J. P.; Laaroussi, Y.; Cordat, A.; Boulard, F.; Christol, P.

    2015-06-01

    In this paper, inductively coupled plasma etching of InSb material has been investigated using methane-hydrogen chemistry. Plasma conditions were first studied in terms of bias autopolarization, partial methane quantity in a CH4/H2 mixture and chamber pressure. The surface morphology of the etched samples was analyzed using an atomic force microscope, scanning electron microscope and x-ray photoelectron spectrometry (XPS) measurements. The results highlight the difficulties in removing etching products related to In, and the surface roughness is mainly correlated with the methane ratio in the mixture. The best surface stoichiometry, with a surface roughness of 7 nm and an etch rate of 110 nm min-1, was obtained with the addition of argon. To evaluate the feasibility of high performance infrared photodiodes, InSb monopixels were fabricated by dry etching, electrically characterized under illumination and compared with devices obtained by wet etching.

  5. Metal-containing fluoropolymer films produced by simultaneous plasma etching and polymerization: Effects of hydrogen or oxygen

    NASA Astrophysics Data System (ADS)

    Kay, E.; Dilks, A.; Seybold, D.

    1980-11-01

    The formation of metal-containing fluoropolymer films by simultaneous plasma etching and polymerization in a radiofrequency diode reactor configuration is investigated as a function of additive scavenger gases. The addition of oxygen to plasmas excited in tetrafluoroethylene or perfluoropropane is found to enhance the etching rate at the excitation metal electrode and diminish the polymer film deposition rate at the grounded electrode. The overall effect is to increase the metal content of the films. The addition of hydrogen to plasmas excited in tetrafluoromethane or perfluoropropane has the opposite effect. X-ray photoelectron spectroscopy is employed to determine the composition and structure of the films, and this coupled with mass spectrometric analysis of the plasma gas phase chemistry has allowed the identification of the likely precursors to plasma polymerization for the systems studied.

  6. Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry

    SciTech Connect

    Hadjadj, Aomar Larbi, Fadila; Gilliot, Mickaël; Roca i Cabarrocas, Pere

    2014-08-28

    When atomic hydrogen interacts with hydrogenated amorphous silicon (a-Si:H), the induced modifications are of crucial importance during a-Si:H based devices manufacturing or processing. In the case of hydrogen plasma, the depth of the modified zone depends not only on the plasma processing parameters but also on the material. In this work, we exposed a-Si:H thin films to H{sub 2} plasma just after their deposition. In situ UV-visible spectroscopic ellipsometry measurements were performed to track the H-induced changes in the material. The competition between hydrogen insertion and silicon etching leads to first order kinetics in the time-evolution of the thickness of the H-modified zone. We analyzed the correlation between the steady state structural parameters of the H-modified layer and the main levers that control the plasma-surface interaction. In comparison with a simple doped layer, exposure of a-Si:H based junctions to the same plasma treatment leads to a thinner H-rich subsurface layer, suggesting a possible charged state of hydrogen diffusing.

  7. Ion-Assisted Plasma Etching

    NASA Astrophysics Data System (ADS)

    Wang, C. Daniel; Abraham-Shrauner, Barbara

    1996-11-01

    We analyze plasma etching of two-dimensional, long trenches where directed ions modeled by drifted Maxwellian distribution functions and isotropic neutral molecules contribute to the etch rate. Analytic expressions for the etch rates enable the user to plot the etch profiles by using standard computer packages for nonlinear first-order ordinary differential equations for the point and its slope. First, etch profiles are shown for ion-assisted etching where the thermal etching of the neutrals is enhanced by the ions. Second, we show etch profiles of a multiple layer device where one layer is n-type silicon (arsenic doped) that etches isotropically (G.S. Oehrlein, "Reactive Ion Etching," Handbook of Plasma Processing, Technology, Ed. S.M. Rossnagel, et al., Noyes Pub., NJ, 1990) The etch rates for the other layers are in the ion flux-limited regime. The lateral etching of the n-type silicon illustrates the necessity of sidewall passivation for this structure.

  8. Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Ohmi, Hiromasa; Funaki, Takeshi; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2016-01-01

    The silicon (Si) etching characteristics and the related efficiency of the etched Si to generate SiH4 gas in narrow-gap high-pressure microwave H2 plasma have been investigated. It was found that cooling of the Si sample is effective to obtain a high etching rate even under high pressure conditions, and the excess temperature increase of both the gas and Si sample can be suppressed even at an input power density of more than 250 W cm-3, probably because of the narrow plasma gap. The local etching depth monotonically increased with increasing H2 pressure and input plasma power, whereas the etching weight decreased with increasing H2 pressure. By simultaneously increasing the H2 pressure and input power, a maximum Si etching rate of 38 μm min-1 was achieved. This is considered to be related to the high H density generated in the narrow-gap microwave plasma at relatively low temperatures. The energy efficiency of Si etching and the utilization efficiency of the etched Si and H2 gas for SiH4 formation are discussed. Lower input power is favorable for high energy efficiency of Si etching. The Si utilization efficiency, which is defined as the molar ratio of generated SiH4 to etched Si, increases with decreasing average gas residence time in the plasma, whereas H2 utilization efficiency is independent of the gas residence time.

  9. Plasma Etching Improves Solar Cells

    NASA Technical Reports Server (NTRS)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  10. In-Plasma Photo-Assisted Etching

    NASA Astrophysics Data System (ADS)

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths <1700 Å. Among the plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  11. Plasma/Neutral-Beam Etching Apparatus

    NASA Technical Reports Server (NTRS)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  12. Pulsed plasma etching for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Economou, Demetre J.

    2014-07-01

    Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

  13. Plasma etching: Yesterday, today, and tomorrow

    SciTech Connect

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  14. High density plasma etching of magnetic devices

    NASA Astrophysics Data System (ADS)

    Jung, Kee Bum

    Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3

  15. Etching with electron beam generated plasmas

    SciTech Connect

    Leonhardt, D.; Walton, S.G.; Muratore, C.; Fernsler, R.F.; Meger, R.A.

    2004-11-01

    A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen-argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride ({approx}200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride (SiO{sub x}F{sub y}) compounds. At low incident ion energies, the Ar-SF{sub 6} mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at {approx}75 eV. Etch rates were independent of the 0.5%-50% duty factors studied in this work.

  16. Plasma etching a ceramic composite. [evaluating microstructure

    NASA Technical Reports Server (NTRS)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  17. Low radio frequency biased electron cyclotron resonance plasma etching

    NASA Astrophysics Data System (ADS)

    Samukawa, Seiji; Toyosato, Tomohiko; Wani, Etsuo

    1991-03-01

    A radio frequency (rf) biased electron cyclotron resonance (ECR) plasma etching technology has been developed to realize an efficient ion acceleration in high density and uniform ECR plasma for accurate Al-Si-Cu alloy film etching. In this technology, the substrate is located at the ECR position (875 G position) and the etching is carried out with a 400 kHz rf bias power. This Al-Si-Cu etching technology achieves a high etching rate (more than 5000 A/min), excellent etching uniformity (within ±5%), highly anisotropic etching, and Cu residue-free etching in only Cl2 gas plasma. These etching characteristics are accomplished by the combination of the dense and uniform ECR plasma generation at the ECR position with the efficient accelerated ion flux at the ECR position by using 400 kHz rf bias.

  18. Reactive Ion Etching of Polymers in Oxygen Based Plasmas: a Study of Etch Mechanisms.

    NASA Astrophysics Data System (ADS)

    Graham, Sandra Wolterman

    The reactive ion etching of polymers has been studied in oxygen-based plasmas in an effort to understand the contributions of various mechanisms to the etching of these materials. Of the four active etch mechanisms; surface damage promoted etching, chemical sputtering, chemically enhanced physical sputtering, and direct reactive ion etching; the emphasis of this work has been on determining the relative contribution of direct reactive ion etching to the overall etching process. The etching of photoresist, polyimide, and amorphous carbon in O_2-CF_4 plasmas was studied in an asymmetrical reactive ion etcher at pressures ranging from 5 to 100 mtorr. Etch yield, ion flux, and oxygen atom concentration data were collected. The fit of this data to a linear model proposed by Joubert et al. (J. Appl. Phys., 65, 1989, 5096) was compared to the fit of the data to a nonlinear model proposed by the author. The linear model accounts for contribution due to three of the four etch mechanisms, but does not include contributions due to direct reactive ion etching. The nonlinear model accounts for contributions due to all four etch mechanisms. Experimental results indicate that the nonlinear model provides a better fit to the data than does the linear model. The relative contribution of direct reactive ion etching to the etching of photoresist ranges from 27% to 81% as the pressure decreases from 100 to 5 mtorr. Similar results are obtained for polyimide and amorphous carbon.

  19. Mechanical Properties of Thermoplastic Polyurethanes Laminated Glass Treated by Acid Etching Combined with Cold Plasma

    NASA Astrophysics Data System (ADS)

    Li, Xibao; Lu, Jinshan; Luo, Junming; Zhang, Jianjun; Ou, Junfei; Xu, Haitao

    2014-10-01

    To overcome the problem of interlaminar delamination of thermoplastic polyurethane laminated glass, silicate glass was etched with hydrofluoric acid and thermoplastic polyurethane was then treated with cold plasma. Compared with the untreated samples, the interlaminar shear strength of acid etching samples, cold plasma-treated samples and acid etching combined with cold plasma-treated samples increased by 97%, 84% and 341%, respectively. Acid etching combined with cold plasma-treated samples exhibited a higher flexural strength and strain as compared with the untreated samples. The impact energy of acid etching samples, cold plasma-treated samples and acid etching combined with cold plasma-treated samples increased by 8.7%, 8.1% and 11.6%, respectively, in comparison with the untreated samples. FT-IR analysis showed that a large number of -C=O, -CO-N and -CO-O-C- groups appeared on the surface of cold plasma-treated thermoplastic polyurethane, which resulted in the formation of hydrogen bonds. SEM results showed that some pittings formed on the surface of the silicate glass treated by acid etching, which resulted in the formation of a three-dimensional interface structure between the silicate glass and polyurethane. Hydrogen bonds combined with the three-dimensional interface between silicate glass and polyurethanes co-improved the mechanical properties of thermoplastic polyurethanes laminated glass.

  20. Inductively coupled plasma etching of GaN

    SciTech Connect

    Shul, R.J.; McClellan, G.B.; Casalnuovo, S.A.; Rieger, D.J.; Pearton, S.J.; Constantine, C.; Barratt, C.; Karlicek, R.F. Jr.; Tran, C.; Schurman, M.

    1996-08-01

    Inductively coupled plasma (ICP) etch rates for GaN are reported as a function of plasma pressure, plasma chemistry, rf power, and ICP power. Using a Cl{sub 2}/H{sub 2}/Ar plasma chemistry, GaN etch rates as high as 6875 A/min are reported. The GaN surface morphology remains smooth over a wide range of plasma conditions as quantified using atomic force microscopy. Several etch conditions yield highly anisotropic profiles with smooth sidewalls. These results have direct application to the fabrication of group-III nitride etched laser facets. {copyright} {ital 1996 American Institute of Physics.}

  1. Plasma etching of chromium films in the fabrication of photomasks

    NASA Astrophysics Data System (ADS)

    Coleman, Thomas P.; Buck, Peter D.

    1995-12-01

    To meet the advanced CD uniformity and resolution requirements of state-of-the-art maskmaking, dry chrome etch processing may be required. Dry etching is a more anisotropic process, significantly reducing etch undercut. The absence of undercutting allows the lithographer to image the resist at the iso-focal point, eliminating the need to underexpose to maintain CDs. Also, dry etch parameters can be precisely controlled via a microprocessor- controlled etch system with a highly accurate parameter-metering system that ensures greater process control. Using design-of-experiment methodologies, a chrome plasma etch process (using OCG-895i) was developed. This work proves the feasibility of plasma etching chromium patterns on photomasks. The results show an etch that has excellent uniformity, is anisotropic, and has excellent edge quality. Also, resist selectivity is high for the etching of thin chrome films. SEM results show a significant reduction in the bias needed to achieve nominal CDs. As with many dry etch processes, loading and microloading effects (i.e., localized pattern density effect on etch rates) are a concern. Initial investigations of loading and microloading effects were conducted. Results suggest that due to the high anisotropy of the etch, microloading is not an issue. However, plate loading (or the amount of chrome removed) increases etch times and can result in radial etch patterns. Loading effects must be minimized or eliminated to optimize etch uniformity.

  2. Spent nuclear fuel recycling with plasma reduction and etching

    DOEpatents

    Kim, Yong Ho

    2012-06-05

    A method of extracting uranium from spent nuclear fuel (SNF) particles is disclosed. Spent nuclear fuel (SNF) (containing oxides of uranium, oxides of fission products (FP) and oxides of transuranic (TRU) elements (including plutonium)) are subjected to a hydrogen plasma and a fluorine plasma. The hydrogen plasma reduces the uranium and plutonium oxides from their oxide state. The fluorine plasma etches the SNF metals to form UF6 and PuF4. During subjection of the SNF particles to the fluorine plasma, the temperature is maintained in the range of 1200-2000 deg K to: a) allow any PuF6 (gas) that is formed to decompose back to PuF4 (solid), and b) to maintain stability of the UF6. Uranium (in the form of gaseous UF6) is easily extracted and separated from the plutonium (in the form of solid PuF4). The use of plasmas instead of high temperature reactors or flames mitigates the high temperature corrosive atmosphere and the production of PuF6 (as a final product). Use of plasmas provide faster reaction rates, greater control over the individual electron and ion temperatures, and allow the use of CF4 or NF3 as the fluorine sources instead of F2 or HF.

  3. Etching characteristics of LiNbO3 in reactive ion etching and inductively coupled plasma

    NASA Astrophysics Data System (ADS)

    Ren, Z.; Heard, P. J.; Marshall, J. M.; Thomas, P. A.; Yu, S.

    2008-02-01

    The etching characteristics of congruent LiNbO3 single crystals including doped LiNbO3 and proton-changed LiNbO3 have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO3 have been fabricated and optically measured.

  4. Atomic precision etch using a low-electron temperature plasma

    NASA Astrophysics Data System (ADS)

    Dorf, L.; Wang, J.-C.; Rauf, S.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

    2016-03-01

    Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (< 3 eV without applied bias) compared to conventional radio-frequency (RF) plasma technologies. Electron beam plasmas are characterized by higher ion-to-radical fraction compared to RF plasmas, so a separate radical source is used to provide accurate control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

  5. Experiment and Results on Plasma Etching of SRF cavities

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Peshl, J.; Vuskovic, Leposova; Popovic, Svetozar; Valente, Anne-Marie; Phillips, H. Lawrence

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electropolished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  6. Optical diagnostic instrument for monitoring etch uniformity during plasma etching of polysilicon in a chlorine-helium plasma

    SciTech Connect

    Hareland, W.A.; Buss, R.J.

    1993-06-01

    Nonuniform etching is a serious problem in plasma processing of semiconductor materials and has important consequences in the quality and yield of microelectronic components. In many plasmas, etching occurs at a faster rate near the periphery of the wafer, resulting in nonuniform removal of specific materials over the wafer surface. This research was to investigate in situ optical diagnostic techniques for monitoring etch uniformity during plasma processing of microelectronic components. We measured 2-D images of atomic chlorine at 726 nm in a chlorine-helium plasma during plasma etching of polysilicon in a parallel-plate plasma etching reactor. The 3-D distribution of atomic chlorine was determined by Abel inversion of the plasma image. The experimental results showed that the chlorine atomic emission intensity is at a maximum near the outer radius of the plasma and decreases toward the center. Likewise, the actual etch rate, as determined by profilometry on the processed wafer, was approximately 20% greater near the edge of the wafer than at its center. There was a direct correlation between the atomic chlorine emission intensity and the etch rate of polysilicon over the wafer surface. Based on these analyses, 3-D imaging would be a useful diagnostic technique for in situ monitoring of etch uniformity on wafers.

  7. Etching of photoresist with an atmospheric pressure plasma jet

    NASA Astrophysics Data System (ADS)

    West, Andrew; van der Schans, Marc; Xu, Cigang; Gans, Timo; Cooke, Mike; Wagenaars, Erik

    2014-10-01

    Low-pressure oxygen plasmas are commonly used in semiconductor industry for removing photoresist from the surface of processed wafers; a process known as plasma ashing or plasma stripping. The possible use of atmospheric-pressure plasmas instead of low-pressure ones for plasma ashing is attractive from the point of view of reduction in equipment costs and processing time. We present investigations of photoresist etching with an atmospheric-pressure plasma jet (APPJ) in helium gas with oxygen admixtures driven by radio-frequency power. In these experiments, the neutral, radical rich effluent of the APPJ is used for etching, avoiding direct contact between the active plasma and the sensitive wafer, while maintaining a high etch rate. Photoresist etch rates and etch quality are measured for a range of plasma operating parameters such as power input, driving frequency, flow rate and wafer temperature. Etch rates of up to 10 micron/min were achieved with modest input power (45 W) and gas flow rate (10 slm). Fourier Transform Infrared (FTIR) spectroscopy showed that the quality of the photoresist removal was comparable to traditional plasma ashing techniques. This work was supported by the UK Engineering and Physical Sciences Research Council Grant EP/K018388/1.

  8. Rapid recipe formulation for plasma etching of new materials

    NASA Astrophysics Data System (ADS)

    Chopra, Meghali; Zhang, Zizhuo; Ekerdt, John; Bonnecaze, Roger T.

    2016-03-01

    A fast and inexpensive scheme for etch rate prediction using flexible continuum models and Bayesian statistics is demonstrated. Bulk etch rates of MgO are predicted using a steady-state model with volume-averaged plasma parameters and classical Langmuir surface kinetics. Plasma particle and surface kinetics are modeled within a global plasma framework using single component Metropolis Hastings methods and limited data. The accuracy of these predictions is evaluated with synthetic and experimental etch rate data for magnesium oxide in an ICP-RIE system. This approach is compared and superior to factorial models generated from JMP, a software package frequently employed for recipe creation and optimization.

  9. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200-300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus √{Ei } curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  10. Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

    NASA Astrophysics Data System (ADS)

    Qiu, Rongfu; Lu, Hai; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2011-01-01

    Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested.

  11. Etching of silicon surfaces using atmospheric plasma jets

    NASA Astrophysics Data System (ADS)

    Paetzelt, H.; Böhm, G.; Arnold, Th

    2015-04-01

    Local plasma-assisted etching of crystalline silicon by fine focused plasma jets provides a method for high accuracy computer controlled surface waviness and figure error correction as well as free form processing and manufacturing. We investigate a radio-frequency powered atmospheric pressure He/N2/CF4 plasma jet for the local chemical etching of silicon using fluorine as reactive plasma gas component. This plasma jet tool has a typical tool function width of about 0.5 to 1.8 mm and a material removal rate up to 0.068 mm3 min-1. The relationship between etching rate and plasma jet parameters is discussed in detail regarding gas composition, working distance, scan velocity and RF power. Surface roughness after etching was characterized using atomic force microscopy and white light interferometry. A strong smoothing effect was observed for etching rough silicon surfaces like wet chemically-etched silicon wafer backsides. Using the dwell-time algorithm for a deterministic surface machining by superposition of the local removal function of the plasma tool we show a fast and efficient way for manufacturing complex silicon structures. In this article we present two examples of surface processing using small local plasma jets.

  12. Automated process control for plasma etching

    NASA Astrophysics Data System (ADS)

    McGeown, Margaret; Arshak, Khalil I.; Murphy, Eamonn

    1992-06-01

    This paper discusses the development and implementation of a rule-based system which assists in providing automated process control for plasma etching. The heart of the system is to establish a correspondence between a particular data pattern -- sensor or data signals -- and one or more modes of failure, i.e., a data-driven monitoring approach. The objective of this rule based system, PLETCHSY, is to create a program combining statistical process control (SPC) and fault diagnosis to help control a manufacturing process which varies over time. This can be achieved by building a process control system (PCS) with the following characteristics. A facility to monitor the performance of the process by obtaining and analyzing the data relating to the appropriate process variables. Process sensor/status signals are input into an SPC module. If trends are present, the SPC module outputs the last seven control points, a pattern which is represented by either regression or scoring. The pattern is passed to the rule-based module. When the rule-based system recognizes a pattern, it starts the diagnostic process using the pattern. If the process is considered to be going out of control, advice is provided about actions which should be taken to bring the process back into control.

  13. Modeling of the angular dependence of plasma etching

    SciTech Connect

    Guo Wei; Sawin, Herbert H.

    2009-11-15

    An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl{sub 2} plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at {approx}60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10{sup 15} atoms/cm{sup 2} on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

  14. Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF4/Ar Plasma

    SciTech Connect

    Bhardwaj, R.K.; Angra, S.K.; Bajpai, R.P.; Lal, Madan; Bharadwaj, Lalit M.

    2005-09-09

    Etching of silicon in Chemical Assisted Plasma Etching mode with CF4 gas being sprayed on the surface of wafer in process chamber and Ar fed to ECR cavity in Electron Cyclotron Resonance (ECR) source was carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/Ar ratio and substrate bias on etching rate of silicon and anisotropy of etched profile has been investigated. The variation of etch rate and anisotropy has been correlated to the availability of fluorine atoms and other radicals available for etching. Optimum parameters required for etching of silicon in chemical assisted plasma etching with self-assembled ECR plasma source has been established.

  15. Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF4/Ar Plasma

    NASA Astrophysics Data System (ADS)

    Bhardwaj, R. K.; Angra, S. K.; Bajpai, R. P.; Lal, Madan; Bharadwaj, Lalit M.

    2005-09-01

    Etching of silicon in Chemical Assisted Plasma Etching mode with CF4 gas being sprayed on the surface of wafer in process chamber and Ar fed to ECR cavity in Electron Cyclotron Resonance (ECR) source was carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/Ar ratio and substrate bias on etching rate of silicon and anisotropy of etched profile has been investigated. The variation of etch rate and anisotropy has been correlated to the availability of fluorine atoms and other radicals available for etching. Optimum parameters required for etching of silicon in chemical assisted plasma etching with self-assembled ECR plasma source has been established.

  16. Plasma & reactive ion etching to prepare ohmic contacts

    SciTech Connect

    Gessert, Timothy A.

    2002-01-01

    A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.

  17. CH4/Ar/H2/SF6 Plasma Etching for Surface Oxide Removal of Indium Bumps

    NASA Astrophysics Data System (ADS)

    Huang, Yue; Lin, Chun; Ye, Zhen-Hua; Liao, Qing-Jun; Ding, Rui-Jun

    2015-07-01

    Plasma etching for surface indium oxide removal by methane/argon/hydrogen/sulfur hexafluoride (CH4/Ar/H2/SF6) mixture has been implemented. The morphology of the indium bumps was not deteriorated after the plasma etching. High-resolution O 1 s x-ray photoelectron spectroscopy (XPS) proved that the In-O component decreased from 44.5% for the nonetched sample to 10.8% for the sample after plasma etching. The surface modification of the indium bumps might be in the form of doped fluorine according to the XPS results. The zero-bias resistance derived from current-voltage ( I- V) measurements for plasma-etched infrared detectors was comparable to that for nonetched ones, indicating that such plasma treatment is suitable for processing sensitive materials such as mercury cadmium telluride.

  18. Plasma discharge characteristics in compact SF6 radio-frequency plasma source for plasma etching application

    NASA Astrophysics Data System (ADS)

    Motomura, Taisei; Takahashi, Kazunori; Kasashima, Yuji; Uesugi, Fumihiko; Ando, Akira

    2015-09-01

    In order to create a compact plasma etching reactor, plasma discharge characteristics in compact SF6 radio-frequency (RF) plasma source which has a chamber diameter of 40 mm have been studied. Convergent magnetic field configuration produced by a solenoid coil and a permanent magnet located behind substrate is employed for efficient plasma transport downstream of plasma source. A discharge characteristics with the changes in relative emission intensity of fluorine atom of FI at 703.7 nm in compact SF6 plasma source are discussed: the dependence of relative emission intensity on the magnetic field strength, the RF input power, and the mass flow rate of the SF6 gas. The relative emission intensity was significantly increased when the RF input power is ~150 W. We present the fundamental etching performance (especially etching rate) of compact plasma source, and then the etching rate of 0.1-1.0 μm/min was obtained under the condition of a RF input power of 50-200 W, a mass flow rate of SF6 of 5.5 sccm and a bias RF power of 20 W. The results of test etching will be shown in presentation.

  19. Lissajous Electron Plasma (LEP) Generation for Dry Etching

    NASA Astrophysics Data System (ADS)

    Nomura, Noboru; Ohkuni, Mitsuhiro; Tamaki, Tokuhiko; Nakayama, Ichiro; Harafuji, Kenji; Sivaram, Srinivasan; Kubota, Masafumi

    1992-12-01

    A new concept for plasma generation which enhances plasma density at low pressures through the use of a high-frequency rotating electric field is introduced. A 50-MHz electric power was applied to three electrodes which are positioned with a triangular symmetry. A phase shift of 120° between the electrodes brought about uniform and high plasma density at a pressure of 1 Pa. The nonuniformity of Ar gas plasma generated was within 10% over a 6'' wafer using a tuned Langmuir probe electron density measurement. Polysilicon etchings were made by both SF6/O2 and Cl2/O2 plasmas. The achieved polysilicon etch-rate was over 200 nm/min for both kinds of plasmas at an electric power of 90 W along with a 13.56 MHz RF bias power of 30 W applied to the substrate. High etch-rate selectivity between polysilicon and oxide of 45 for SF6/O2 and 152 for Cl2/O2 was realized. A very low etch-rate nonuniformity of 1.5% was attained for Cl2/O2.

  20. The grand challenges of plasma etching: a manufacturing perspective

    NASA Astrophysics Data System (ADS)

    Lee, Chris G. N.; Kanarik, Keren J.; Gottscho, Richard A.

    2014-07-01

    Plasma etching has been enabling nano-electronic fabrication since the 1980s; during this time, transistor size has shrunk by nearly two orders of magnitude, starting at 1.0 µm in the mid 80s to ˜0.01 µm today. The manufacturing of these devices requires overcoming a series of challenges, ranging from continuous innovation on device integration to extend Moore's law to breaking tradeoffs on the perennial challenge of aspect ratio-dependent etching. In this paper, we will review four key areas in etch manufacturing: uniformity, defects, surface precision and ‘sticky’/non-volatile etch materials. In the uniformity section, we will discuss the challenges for microscopic uniformity, such as localized feature dimension variations; macroscopic uniformity, such as performance at the extreme edge of the wafer; and repeatable uniformity, meaning wafer-to-wafer, lot-to-lot and chamber-to-chamber performance. While defect management is successful with in situ plasma cleans, one must be cognizant of the choice of clean chemistry. In surface precision, we look at the approach of atomic layer etching and how it can be successful in a manufacturing environment. Finally, in the non-volatile material section, we review technology drivers for DRAM (dynamic random access memory) and NAND flash memory in the microelectronics Si industry, with focus on the utilization of such materials and what it means to etch equipment manufacturers.

  1. Fabrication of Glassy Carbon Molds Using Hydrogen Silsequioxane Patterned by Electron Beam Lithography as O2 Dry Etching Mask

    NASA Astrophysics Data System (ADS)

    Yasui, Manabu; Sugiyama, Yoshinari; Takahashi, Masaharu; Kaneko, Satoru; Uegaki, Jun-ichi; Hirabayashi, Yasuo; Sugimoto, Koh-ichi; Maeda, Ryutaro

    2008-06-01

    Glass is a good candidate material for optical devices because of its enhanced optical properties, the technique of die machining has not been established for the hot embossing of glass. In this study, we used the glassy carbon (GC) mold for the hot embossing of glass. An inductively coupled plasma reactive ion etching (ICP-RIE) using oxygen plasma was employed for the submicron structuring of the GC mold. Hydrogen silsesquioxane (HSQ) is a negative-type electron beam (EB) resist used to be resistant to oxygen plasma. HSQ patterns drawn by electron beam lithography (EBL) were used as the O2 dry etching mask. The etching selectivity between HSQ and GC was 35. The average of the extent of side etching was 40 nm at a depth of 300 nm. The side etching functioning as the draft angle was caused mainly by oxygen radicals, because HSQ patterns remained even after GC patterns were side-etched. We confirmed that the GC mold fabricated by O2 dry etching can be used for glass hot embossing. Since the mold lubricant was not rubbed on the mold surface, GC is the appropriate mold material for Pyrex glass.

  2. Origin of electrical signals for plasma etching endpoint detection

    SciTech Connect

    Sobolewski, Mark A.

    2011-11-14

    Electrical signals are used for endpoint detection in plasma etching, but the origin of the electrical changes observed at endpoint is not known. They may be caused by changes in the gas-phase densities of etch products and reactants or by changes in substrate surface properties such as photoemitted or ion-induced electron yield. To investigate these effects, experiments were performed in an inductively coupled, rf-biased reactor, during CF{sub 4}/Ar etches of SiO{sub 2} films on Si wafers. The rf bias impedance was measured vs. time during etching, simultaneous with Langmuir probe measurements. At endpoint, a decrease in impedance coincided with increases in ion current and electron energy. The data, analyzed by a numerical model of the discharge, indicate that changes in electron emission yield were relatively insignificant or entirely absent. Thus the impedance change is not a surface effect but is, instead, predominantly or entirely a gas-phase phenomenon.

  3. Diamond growth on Fe-Cr-Al alloy by H2-plasma enhanced graphite etching

    NASA Astrophysics Data System (ADS)

    Li, Y. S.; Hirose, A.

    2007-04-01

    Without intermediate layer and surface pretreatment, adherent diamond films with high initial nucleation density have been deposited on Fe-15Cr-5Al (wt. %) alloy substrate. The deposition was performed using microwave hydrogen plasma enhanced graphite etching in a wide temperature range from 370to740°C. The high nucleation density and growth rate of diamond are primarily attributed to the unique precursors used (hydrogen plasma etched graphite) and the chemical nature of the substrate. The improvement in diamond adhesion to steel alloys is ascribed to the important role played by Al, mitigation of the catalytic function of iron by suppressing the preferential formation of loose graphite intermediate phase on steel surface.

  4. Inductively coupled plasma etching of BZN thin films in SF6/Ar plasmas

    NASA Astrophysics Data System (ADS)

    Wang, Gang; Li, Ping; Zhang, Guojun; Li, Wei; Dai, Liping; Jiang, Jing

    2013-03-01

    Etching mechanisms and characteristics of bismuth zinc niobate (BZN) thin films were investigated in inductively coupled SF6/Ar plasmas. The influences of various etching parameters including the gas flow ratio, process pressure, and ICP power on the etching results were analyzed. It is found that the chemical etching with F radicals was more effective than the physical sputtering etching with Ar ions for the inductively coupled plasma etching of BZN thin films. The mechanism of ion assisted chemical etching of BZN thin films in SF6/Ar plasmas was proposed. A maximum etch rate of approximately 43.15 nm/min for the BZN thin film was obtained at the optimum etching conditions: 3/2 for the SF6/Ar gas flow ratio, 10 mTorr for the process pressure, and 600 W for the ICP power. The surface morphology of the etched BZN thin film was observed, where was smooth and clean and no post-etch residues were remained.

  5. Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

    SciTech Connect

    Muttalib, Muhammad Firdaus A. Chen, Ruiqi Y.; Pearce, Stuart J.; Charlton, Martin D. B.

    2014-07-01

    Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.

  6. Method of plasma etching Ga-based compound semiconductors

    SciTech Connect

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  7. Method of plasma etching GA-based compound semiconductors

    SciTech Connect

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  8. Behavior of acid etching on titanium: topography, hydrophility and hydrogen concentration.

    PubMed

    Lin, Xi; Zhou, Lei; Li, Shaobing; Lu, Haibin; Ding, Xianglong

    2014-02-01

    Since acid etching is easily controlled and effective, it has become one of the most common methods of surface modification. However, the behavior of etching is seldom discussed. In this study, different surfaces of titanium were prepared by changing the etching temperature and time. Surface topography, roughness, contact angles, surface crystalline structure, hydrogen concentration and mechanical properties were observed. As a result, surface topography and roughness were more proportional to etching temperature; however, diffusion of hydrogen and tensile strength are more time-related to titanium hydride formation on the surface. Titanium becomes more hydrophilic after etching even though the micropits were not formed after etching. More and deeper cracks were found on the specimens with more hydrogen diffusion. Therefore, higher temperature and shorter time are an effective way to get a uniform surface and decrease the diffusion of hydrogen to prevent hydrogen embrittlement. PMID:24343349

  9. Plasma-etching science meets technology in the MDL

    SciTech Connect

    Greenberg, K.E.; Miller, P.A.; Patteson, R.; Smith, B.K.

    1993-03-01

    Results from fundamental investigations of low-temperature plasma systems were used to improve chamber-to-chamber reproducibility and reliability in commercial plasma-etching equipment. The fundamental studies were performed with a GEC RF Reference Cell, a laboratory research system designed to facilitate experimental and theoretical studies of plasma systems. Results and diagnostics from the Reference Cell studies were then applied to analysis and rectification of chamber-to-chamber variability on a commercial, multichamber, plasma reactor. Pertinent results were transferred to industry.

  10. Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces

    SciTech Connect

    King, Sean W. Davis, Robert F.; Carter, Richard J.; Schneider, Thomas P.; Nemanich, Robert J.

    2015-09-15

    The desorption kinetics of molecular hydrogen (H{sub 2}) from silicon (001) surfaces exposed to aqueous hydrogen fluoride and remote hydrogen plasmas were examined using temperature programmed desorption. Multiple H{sub 2} desorption states were observed and attributed to surface monohydride (SiH), di/trihydride (SiH{sub 2/3}), and hydroxide (SiOH) species, subsurface hydrogen trapped at defects, and hydrogen evolved during the desorption of surface oxides. The observed surface hydride species were dependent on the surface temperature during hydrogen plasma exposure with mono, di, and trihydride species being observed after low temperature exposure (150 °C), while predominantly monohydride species were observed after higher temperature exposure (450 °C). The ratio of surface versus subsurface H{sub 2} desorption was also found to be dependent on the substrate temperature with 150 °C remote hydrogen plasma exposure generally leading to more H{sub 2} evolved from subsurface states and 450 °C exposure leading to more H{sub 2} desorption from surface SiH{sub x} species. Additional surface desorption states were observed, which were attributed to H{sub 2} desorption from Si (111) facets formed as a result of surface etching by the remote hydrogen plasma or aqueous hydrogen fluoride treatment. The kinetics of surface H{sub 2} desorption were found to be in excellent agreement with prior investigations of silicon surfaces exposed to thermally generated atomic hydrogen.

  11. Reactive Plasma Etching of SiC in a Tetrafluoroethane / Oxygen Plasma

    NASA Astrophysics Data System (ADS)

    Galloway, Heather C.; Radican, Kevin P.; Donnelly, David; Koeck, Deborah C.

    2003-03-01

    The etch rate as a function of oxygen concentration was investigated in the RF magnetron plasma etching of SiC with tetrafluoroethane gas. The etch rate and surface roughness was measured with atomic force microscopy, while evidence of polymer deposition was analyzed with FTIR. Etch rates of > 10 nm/sec can be achieved with high selectivity with respect to an aluminum mask, near infinite selectivity with respect to silicon. This has also been found to be compatible with some low-k dielectric films. Tetrafluoroethane is of interest due to its high fluorine content. It is also a nontoxic, ozone friendly gas with a short atmospheric lifetime. The role of oxygen in the etching process will be discussed and this etching process will be compared to other SiC etches that have been previously reported

  12. Characterization of Plasma Generated in a Commercial Grade Plasma Etching system

    NASA Astrophysics Data System (ADS)

    Bessinger, Gabriella; Drake, Dereth; Popovic, Svetozar; Vuskovic, Leposava

    2014-10-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academicians use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  13. Optical Characterization of Plasma Generated in a Commercial Grade Plasma Etching System

    NASA Astrophysics Data System (ADS)

    Hardy, Ashley; Drake, Dereth

    2015-11-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academics use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  14. Etching characteristics of LiNbO{sub 3} in reactive ion etching and inductively coupled plasma

    SciTech Connect

    Ren, Z.; Yu, S.; Heard, P. J.; Marshall, J. M.; Thomas, P. A.

    2008-02-01

    The etching characteristics of congruent LiNbO{sub 3} single crystals including doped LiNbO{sub 3} and proton-changed LiNbO{sub 3} have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO{sub 3} have been fabricated and optically measured.

  15. Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Roychowdhury, A.; Dana, R.; Dreyer, M.; Anderson, J. R.; Lobb, C. J.; Wellstood, F. C.

    2014-07-01

    We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF6 plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi2Se3 at temperatures ranging from 30 mK to 9 K.

  16. Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

    SciTech Connect

    Roychowdhury, A.; Dana, R.; Dreyer, M.; Anderson, J. R.; Lobb, C. J.; Wellstood, F. C.

    2014-07-07

    We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF₆ plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi₂Se₃ at temperatures ranging from 30 mK to 9 K.

  17. Ion orbits in plasma etching of semiconductors

    SciTech Connect

    Madziwa-Nussinov, Tsitsi G.; Arnush, Donald; Chen, Francis F.

    2008-01-15

    Fabrication of high-speed semiconductor circuits depends on etching submicron trenches and holes with straight walls, guided by sheath accelerated ions, which strike the substrate at a normal angle. Electrons accumulate at the nonconductive entrance of each trench, charging it negatively and preventing the penetration of electrons to the bottom of the trench. This 'electron shading' effect causes an ion charge at the bottom, which is well known to cause damage to thin oxide layers. In addition, the deflection of ions by electric fields in the trench can cause deformation of the trench shape. To study this effect, the ion orbits are computed self-consistently with their charging of the trench walls. It is found that (a) the orbits depend only on the electric fields at the entrance and are sensitive to changes in the shape of the photoresist layer there; (b) there is an 'ion shading' effect that protects part of the wall; and (c) the number of ions striking the wall is too small to cause any deformation thereof.

  18. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    NASA Astrophysics Data System (ADS)

    Ji, Jing; Tay, Francis E. H.; Miao, Jianmin; Sun, Jianbo

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  19. GaN etching in BCl{sub 3}Cl{sub 2} plasmas

    SciTech Connect

    Shul, R.J.; Ashby, C.I.H.; Willison, C.G.; Zhang, L.; Han, J.; Bridges, M.M.; Pearton, S.J.; Lee, J.W.; Lester, L.F.

    1998-04-01

    GaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaCl{sub 3} and NCl etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, the authors report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl{sub 3}:Cl{sub 2} flow ratio, dc-bias, chamber-pressure, and ICP source power. GaN etch rates ranging from {approximately}100 {angstrom}/min to > 8,000 {angstrom}/min were obtained with smooth etch morphology and anisotropic profiles.

  20. Real-time Control and Modeling of Plasma Etching

    NASA Astrophysics Data System (ADS)

    Sarfaty, M.; Baum, C.; Harper, M.; Hershkowitz, N.; Shohet, J. L.

    1997-10-01

    The relatively high process rates in high density plasma tools as well as the shrinking thickness of the films, require fast estimate of the process state in order to implement real-time advanced process control. The fast etch rate estimate, within one second, in a single spot size of 1-2 mm and the time averaged rates across the wafer are obtained by a combined use of an in-situ two-color laser interferometer and a full wafer image interferometer, respectively. The gas phase state is monitored by optical emission spectroscopy and a residual gas analyzer. The magnetically confined ICP tool state, including gas flow, pressure, and RF power to the antenna and the electrostatic chuck, is computer controlled and monitored. The absolute thickness of the film is determined during the process, thus providing an end-point prediction. The advantages of two-color laser interferometry for real-time process monitoring, development and control will be described. Langmuir kinetics modeling of the measured etch rates of polysilicon and SiO2 films in Cl2 and CF4 discharges using tool state parameters will be described. The etch rate model enabled us to develop a model-based real-time control algorithm. The achieved real-time control of plasma etch rates of un-patterned SiO2 and polysilicon films will be described. This work is funded by NSF grant No. EEC-8721545.

  1. Plasma-etched nanostructures for optical applications (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Schulz, Ulrike; Rickelt, Friedrich; Munzert, Peter; Kaiser, Norbert

    2015-08-01

    A basic requirement for many optical applications is the reduction of Fresnel-reflections. Besides of interference coatings, nanostructures with sub-wavelength size as known from the eye of the night-flying moth can provide antireflective (AR) properties. The basic principle is to mix a material with air on a sub-wavelength scale to decrease the effective refractive index. To realize AR nanostructures on polymers, the self-organized formation of stochastically arranged antireflective structures using a low-pressure plasma etching process was studied. An advanced procedure involves the use of additional deposition of a thin oxide layer prior etching. A broad range of different structure morphologies exhibiting antireflective properties can be generated on almost all types of polymeric materials. For applications on glass, organic films are used as a transfer medium. Organic layers as thin film materials were evaluated to identify compounds suitable for forming nanostructures by plasma etching. The vapor deposition and etching of organic layers on glass offers a new possibility to achieve antireflective properties in a broad spectral range and for a wide range of light incidence.

  2. Etch Process Sensitivity To An Inductively Coupled Plasma Etcher Treated With Fluorine-Based Plasma

    NASA Astrophysics Data System (ADS)

    Xu, Songlin; Sun, Zhiwen; Qian, Xueyu; Yin, Gerald

    1997-10-01

    Significant etch rate drop after the treatment of an etch chamber with Fluorine-based plasma has been found for some silicon etch processes on an inductively coupled plasma reactor, which might cause problems in IC production line once the etch chamber runs alternative processes with F-based and F-free chemistry, or needs frequent cleaning with F-plasma. In this work, a systematic study of the root cause of process sensitivity to the etch chamber treated with F-plasma has been conducted. The experimental results show that pressure is a key factor to affect the etch rate drop. Processes at high pressure are more sensitive than those at low pressure because the quenching of neutral reactive species becomes more severe after the F-treatment. O2 addition also increases the etch rate sensitivity, basically due to higher O2(subscript: )concentration after F-treatment which enhances the oxidation of silicon. The EDX and XPS elemental analysis of the chamber interior wall reveals a significant composition change after the interaction with F-plasma, the altered surface might accelerate the recombination of free radical species.

  3. Sub millimeter absorption spectroscopy of oxygen containing fluorocarbon etching plasmas

    NASA Astrophysics Data System (ADS)

    Benck, Eric; Siegrist, Karen

    2004-09-01

    The role of oxygen in fluorocarbon etching plasmas is investigated using sub millimeter wavelength absorption spectroscopy. The plasmas were created in a specially modified capacitively coupled Gaseous Electronics Conference (GEC) Reference Reactor with a commercial electrostatic chuck. Photoresist and SiO2 blanket coated wafers were etched in C_4F_8/O_2/Ar, C_5F_8/O_2/Ar, and C_4F_6/O_2/Ar discharges. The absolute density of various radicals (CF, CF_2, CHF_3, COF_2, CO, etc.) were measured as a function of the percentage of oxygen in the feed gas mixture using a sub millimeter source based on a 48x frequency multiplication chain. These results are also compared with C_xF_y/O_2/Xe mixtures.

  4. Nanopillar ITO electrodes via argon plasma etching

    SciTech Connect

    Van Dijken, Jaron G.; Brett, Michael J.

    2012-07-15

    The authors demonstrate the formation of vertically aligned indium tin oxide (ITO) nanopillars by exposing planar ITO films to Ar plasma, the conditions of which determine the size, spacing, and aspect ratio of the pillars. Annealing in air and forming gas is used to recover and optimize the optical transmittance and electrical conductivity of the nanopillar films. The final product is an ITO film whose superior optical transmittance and strong electrical conductivity combine with its robust columnar morphology and processing scalability to make it suitable for use in highly absorbing organic solar cells.

  5. Mechanism for Plasma Etching of Shallow Trench Isolation Features in an Inductively Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Agarwal, Ankur; Rauf, Shahid; He, Jim; Choi, Jinhan; Collins, Ken

    2011-10-01

    Plasma etching for microelectronics fabrication is facing extreme challenges as processes are developed for advanced technological nodes. As device sizes shrink, control of shallow trench isolation (STI) features become more important in both logic and memory devices. Halogen-based inductively coupled plasmas in a pressure range of 20-60 mTorr are typically used to etch STI features. The need for improved performance and shorter development cycles are placing greater emphasis on understanding the underlying mechanisms to meet process specifications. In this work, a surface mechanism for STI etch process will be discussed that couples a fundamental plasma model to experimental etch process measurements. This model utilizes ion/neutral fluxes and energy distributions calculated using the Hybrid Plasma Equipment Model. Experiments are for blanket Si wafers in a Cl2/HBr/O2/N2 plasma over a range of pressures, bias powers, and flow rates of feedstock gases. We found that kinetic treatment of electron transport was critical to achieve good agreement with experiments. The calibrated plasma model is then coupled to a string-based feature scale model to quantify the effect of varying process parameters on the etch profile. We found that the operating parameters strongly influence critical dimensions but have only a subtle impact on the etch depths.

  6. Inductively coupled plasma etch of DUV MoSi photomasks: a designed study of etch chemistries and process results

    NASA Astrophysics Data System (ADS)

    Constantine, Chris; Johnson, David J.; Westerman, Russell J.; Hourd, Andrew C.

    1998-12-01

    The continuing requirements for high resolution, critical dimension control and linearity on photomasks necessitates highly anisotropic and uniform etching of the absorber material. Plasma etching has seen strong increases in popularity to improve the above mentioned requirements. Also recently popular is the inclusion of Embedded Phase Shift materials such as Molybdenum Silicide (MoSi); these materials allow for an engineered 180 degree shift in the phase of the exposure light at the wafer pane, affording enhanced contrast at the edges of a line or feature. This article studies the effect of ICP-based plasma conditions on the CD Uniformity, MoSi etch rate and post-etch Quartz roughness of 6 X 6 DUV MoSi Embedded Phase Shift mask structures through use of carefully Designed Experiments. This Design of Experiment (DOE) makes it possible to screen plasma chemistry, optimize resultant plasma parameters and present an overlayed Simultaneous Solution which is used as a centerpoint for Device Plate etch tuning. The high plasma density, independent ion energy control and low pressure operation of Inductively Coupled Plasmas make this technology well suited to minimizing undercut of the MoSi and affords a vehicle for the realization of a zero-basis etch process.

  7. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    PubMed

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG. PMID:26521000

  8. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  9. Performance enhancement of IPMC by anisotropic plasma etching process

    NASA Astrophysics Data System (ADS)

    Lee, Seok Hwan; Kim, Chul-Jin; Hwang, Hyun-Woo; Kim, Sung-Joo; Yang, Hyun-Seok; Park, No-Cheol; Park, Young-Pil; Park, Kang-Ho; Lee, Hyung-Kun; Choi, Nak-Jin

    2009-03-01

    Ionic Polymer-Metal Composites (IPMCs) of EAP actuators is famous for its good property of response and durability. The performance of Ionic Polymer-Metal Composites (IPMCs) is an important issue which is affected by many factors. There are two factors for deciding the performance of IPMC. By treating anisotropic plasma etching process to 6 models of the IPMCs, enhanced experimental displacement and force results are obtained. Plasma patterning processes are executed by changing the groove and the land length of 6 patterns. The purpose of the present investigation is to find out the major factor which mainly affects the IPMC performance. Simulations using ANSYS have been executed to compare with the experimental results about the values and the tendency of data. Experimental and simulating data of the performances seem to have similar tendency. In the next part of the paper, we observed the other properties like capacitance, resistance and stiffness of 6 plasma patterned IPMCs. And we observed that the stiffness is the major factor which affects the performance of IPMCs. As we seen, our problem has been reduced to investigate about the property of stiffness. We suggest that the stiffness is largely changed mainly because of the different thickness of Platinum stacked of the groove and the land part which are produced by anisotropic plasma etching processes. And we understand that anisotropic plasma patterned IPMCs of better performance can be applied to various applications.

  10. Isotropic plasma etching of Ge Si and SiNx films

    DOE PAGESBeta

    Henry, Michael David; Douglas, Erica Ann

    2016-05-01

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  11. Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas

    NASA Astrophysics Data System (ADS)

    Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu

    2014-01-01

    The etching-limiting step in slow Si etching with HCl/H2 at atmospheric pressure was investigated. The etching was performed at a low etching rate below 10 nm/min in the temperature range of 1000-1100 °C. In the case of bare Si etching, it was confirmed that the etching rate showed little temperature dependence and was proportional to the equilibrium pressure of the etching by-product SiCl2 calculated by thermochemical analysis. In addition, the etching rates of Si(100) and (110) faces were almost the same. These results indicate that SiCl2 diffusion in the gas phase is the rate-limiting step. In the etching of the Si surface with SiO2 mask patterns, a strong loading effect (mask/opening pattern dependence of the etching rate) was observed. The simulation of the diffusion of gas species immediately above the Si surface revealed that the loading effect was attributed to the pattern-dependent diffusion of SiCl2.

  12. Optical and electrical diagnostics of fluorocarbon plasma etching processes

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul

    1999-05-01

    This article reviews recent work concerning the role of CF and CF2 radicals in etching and polymerization processes occurring in capacitively coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO2 layers in microelectronic device fabrication. Laser-induced fluorescence (LIF) was used to determine time-resolved axial concentration profiles of these species in continuous and pulse-modulated CF4 and C2F6 plasmas. Calibration techniques, including broad-band UV absorption spectroscopy, were developed to put the LIF measurements on an absolute scale. A novel technique was used to determine the ion flux to the reactor walls in these polymerizing environments. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer. It was found that CFx radicals are produced predominantly by the reflection of neutralized and dissociated CFx+ ions at the powered electrode surface. When the fluorine atom concentration is high, the CFx radicals are destroyed effectively by recombination catalysed by the reactor walls. When the fluorine atom concentration is lowered, the CF2 concentration rises markedly, and it participates in gas-phase oligomerization processes, forming large CxFy molecules and, after ionization, large CxFy+ ions. These species appear to be the true polymer precursors. This mechanism explains the well known correlation between high CF2 concentrations, polymer deposition and SiO2 over Si etch selectivity.

  13. Understanding anisotropic plasma etching of two-dimensional polystyrene opals for advanced materials fabrication.

    PubMed

    Akinoglu, Eser M; Morfa, Anthony J; Giersig, Michael

    2014-10-21

    Anisotropic deformation of polystyrene particles in an oxygenated (O2/Ar) plasma is observed for radio frequency (rf) plasma and inductively coupled plasma (ICP). A facile model based on a ratio of completely isotropic and completely anisotropic etching is presented to describe the anisotropy of the etching process and is implemented to determine the height of the spheroid-shaped polystyrene particles. In our systems, we find the plasma etching to be 54% isotropic in the rf plasma and 79% isotropic in the ICP. With this model, the maximum material deposition thickness for nanofabrication with plasma-etched nanosphere lithography or colloid lithography can be predicted. Moreover, the etching of polystyrene particles in an oxygenated plasma is investigated versus the etching time, gas flow, gas composition, temperature, substrate material, and particle size. The results of this study allow precise shape tuning during the fabrication of nanostructured surfaces with size-dependent properties for bionic, medical, and photonic applications. PMID:24580644

  14. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    NASA Technical Reports Server (NTRS)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  15. Structure dependent hydrogen induced etching features of graphene crystals

    NASA Astrophysics Data System (ADS)

    Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap; Papon, Remi; Sharma, Subash; Vishwakarma, Riteshkumar; Sharma, Kamal P.; Tanemura, Masaki

    2015-06-01

    H2 induced etching of graphene is of significant interest to understand graphene growth process as well as to fabricate nanoribbons and various other structures. Here, we demonstrate the structure dependent H2 induced etching behavior of graphene crystals. We synthesized graphene crystals on electro-polished Cu foil by an atmospheric pressure chemical vapor deposition process, where some of the crystals showed hexagonal shaped snowflake-dendritic morphology. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystals by annealing in a gas mixture of H2 and Ar. The regular graphene crystals were etched anisotropically creating hexagonal holes with pronounced edges, while etching of all the dendritic crystals occurred from the branches of lobs creating symmetrical fractal structures. The etching behavior provides important clue of graphene nucleation and growth as well as their selective etching to fabricate well-defined structures for nanoelectronics.

  16. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching

    NASA Astrophysics Data System (ADS)

    Li, Zhiqin; Chen, Yiqin; Zhu, Xupeng; Zheng, Mengjie; Dong, Fengliang; Chen, Peipei; Xu, Lihua; Chu, Weiguo; Duan, Huigao

    2016-09-01

    Single-crystal silicon nanostructures have attracted much attention in recent years due in part to their unique optical properties. In this work, we demonstrate direct fabrication of single-crystal silicon nanotubes with sub-10 nm walls which show low reflectivity. The fabrication was based on a cryogenic inductively coupled plasma reactive ion etching process using high-resolution hydrogen silsesquioxane nanostructures as the hard mask. Two main etching parameters including substrate low-frequency power and SF6/O2 flow rate ratio were investigated to determine the etching mechanism in the process. With optimized etching parameters, high-aspect-ratio silicon nanotubes with smooth and vertical sub-10 nm walls were fabricated. Compared to commonly-used antireflection silicon nanopillars with the same feature size, the densely packed silicon nanotubes possessed a lower reflectivity, implying possible potential applications of silicon nanotubes in photovoltaics.

  17. Tantalum Etching with an Atmospheric Pressure Plasma Jet

    NASA Astrophysics Data System (ADS)

    Teslow, Hilary; Herrmann, Hans; Rosocha, Louis

    2002-10-01

    The APPJ is a non-thermal, atmospheric-pressure, glow discharge. A feedgas, composed of an inert carrier gas (e.g., He) and small concentrations of additives (e.g., O2, or CF4), flows between closely spaced electrodes powered at 13.56 MHz rf in a coaxial or parallel plate arrangement. The plasma has Te ˜ 2 eV and ne ˜ 10^11 cm-3. Electrons are not in thermal equilibrium with ions and neutrals: the electrons are ``hot", while the overall gas temperature is quite ``cold", typically 50-300 C. In the plasma, the gas is excited, dissociated or ionized by energetic electron impact. As the gas exits the discharge volume, ions and electrons are rapidly lost by recombination, leaving metastables (e.g. O2*, He*) and radicals (e.g. O, F, OF, O2F, CFO). These reactive species are then directed onto a surface to be processed. The APPJ has been developed for decontaminating nuclear, chemical, and biological agents. Atomic fluorine, and possibly other reactive species, can be used to convert actinides (e.g., U and Pu), into volatile fluorides (e.g., UF6, PuF6) that can be trapped, resulting in significant volume reduction of radioactive waste. In this talk, we will present results on using Ta as a surrogate for Pu in He/O2/CF4 etching plasmas. Results of experimental measurements of Ta etch rates for various gas mixtures and plasma jet standoff distance will be compared with plasma chemistry modeling of the concentrations of several active species produced in the plasma.

  18. Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

    NASA Astrophysics Data System (ADS)

    Shim, Kyu-Hwan; Yang, Ha Yong; Kil, Yeon-Ho; Yang, Hyeon Deok; Yang, Jong-Han; Hong, Woong-Ki; Kang, Sukill; Jeong, Tae Soo; Kim, Taek Sung

    2012-08-01

    The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ˜200 mC/cm2. When ICP Power was 200W, CF4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ˜1.5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.

  19. Particle contamination characterization in a helicon plasma etching tool

    SciTech Connect

    Selwyn, G.S.

    1996-03-01

    There is much current interest regarding the formation, transport, charging, and behavior of particulate contamination in high density plasma tools, as these tools are generally regarded as the future of plasma processing for the semiconductor industry due to the need to obtain greater anisotropy and faster process rates concurrently with reduced surface damage. Because of the low pressures in which these tools typically operate ({lt}5 mTorr), the likelihood of homogeneous nucleation processes leading to particle contamination problems is low. Similarly, the effect of ion drag is also expected to be greater, possibly leading to reduced particle trapping effects. Yet, few laser light scatter studies have been performed in high density plasma tools. This study is the first {ital in} {ital situ} characterization of particle contamination in a plasma etching tool using a helicon source. It was performed during normal process conditions for poly-Si etching and also under intentionally altered process conditions designed to produce particles. The effect of a bipolar, electrostatic chuck on wafer particle deposition was also investigated. Results showed that under normal process conditions, few particles were deposited onto the wafer; those that were observed were attributed to thermal stress effects resulting in flaking of deposition films, probably on the quartz bell jar of the source. Results also suggest that the electrostatic chuck increased particle deposition when the clamping voltage was applied. No trapping was observed over the wafer or near the source. However, some trapped particles were observed below the wafer platform. These particles showed unusual motion, but probably have minimal effect on wafer contamination. The issues pertaining to particle contamination formation and transport in this high density plasma tool are discussed. {copyright} {ital 1996 American Vacuum Society}

  20. Feasibility of atomic layer etching of polymer material based on sequential O{sub 2} exposure and Ar low-pressure plasma-etching

    SciTech Connect

    Vogli, Evelina; Metzler, Dominik; Oehrlein, Gottlieb S.

    2013-06-24

    We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O{sub 2} exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with Almost-Equal-To 0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

  1. The study of FTO surface texturing fabrication using Argon plasma etching technique for DSSC applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Lindha; Kusumandari; Sujitno, Tjipto; Suryana, Risa

    2016-02-01

    This paper is aimed to investigate the fabrication of the fluorine-doped tin oxide (FTO) texturing by using Argon (Ar) plasma etching. The pressure and temperature of Ar gas during plasma etching were 1.6 mbar and 240-285oC, respectively. The plasma etching time was varied from 3 and 10 min. We also prepared without etching samples as reference. UV-Vis spectrophotometer showed that the transmittances of etching samples are higher than the without etching samples. The root mean square roughness (Rq) of etching samples are lower than the without etching samples. It is considered that the Ar ions bombardment can modify the FTO surfaces. However, the etching time does not significantly affect the FTO surfaces for 3 min and 10 min. The Rq of the without etching sample, the etching sample for 3 min, and the etching sample for 10 min are 11.697 nm, 9.859 nm, and 9.777 nm, respectively. These results are good agreement with the four point probe measurement that indicated that the sheet resistance (RS) for each the without sample, the etching sample for 3 min, and the etching sample for 10 min are 16.817 Ωsq, 16.067 Ω/sq, and 15.990 Ω/sq. In addition, the optical transmittance of the etching sample for 3 min and the etching sample for 10 min at wavelengths of 350 - 850 nm are almost similar. This is evidence that the etching time below 10 min cannot significantly change the morphology, optical and electrical properties.

  2. Plasma surface kinetics studies of silicon dioxide etch process in inductively coupled fluorocarbon plasmas

    NASA Astrophysics Data System (ADS)

    Chang, Won-Seok; Yu, Dong-Hun; Cho, Deog-Gyun; Yook, Yeong-Geun; Chun, Poo-Reum; Lee, Se-Ah; Kwon, Deuk-Chul; Im, Yeon-Ho

    2013-09-01

    With continuous decrease of nanoscale design rule, plasma etching processes to form high aspect ratio contact hole still remains a challenge to overcome their inherent drawbacks such as bowing and twisted feature. Due to their complexities there still exist big gaps between current research status and predictable modeling of this process. To address this issue, we proposed a surface kinetic model of silicon nitride etch process under inductively coupled fluorocarbon plasmas. For this work, the cut-off probe and quadrapole mass spectroscopy were used for measuring electrical plasma properties, the ion and neutral radical species. Furthermore, the systematic surface analysis was performed to investigate the thickness and chemical bonding of polymer passivation layer during the etch process. The proposed semi-global surface kinetic model can consider deposition of polymer passivation layer and silicon nitride etching self-consistently. The predicted modeling results showed good agreement with experimental data. We believe that our research will provide valuable information to avoid the empirical development of plasma etching process.

  3. In situ technique for measurement and control of transistor characteristics during remote plasma etching

    NASA Astrophysics Data System (ADS)

    Lishan, David; Hu, Evelyn

    1991-09-01

    In situ electrical monitoring has been carried out in a remote plasma etching system allowing accurate control of device electrical parameters. We have used this technique to gate recess-etch two different high electron mobility transistor structures while recording device source-drain I-V characteristics throughout the etching. Current versus etching time data and time elapsed I-V curves are presented.

  4. Radical surface interactions in industrial silicon plasma etch reactors

    NASA Astrophysics Data System (ADS)

    Cunge, G.; Vempaire, D.; Ramos, R.; Touzeau, M.; Joubert, O.; Bodard, P.; Sadeghi, N.

    2010-06-01

    Silicon etching in Cl2-based plasmas is an important step for the fabrication of IC circuits but the plasma surface interactions involved in this process remain poorly understood. Based on the developments in plasma and reactor wall diagnostics, this paper reviews the recent progress in the understanding of radicals' interactions with surfaces during silicon etching processes. X-ray photoelectron spectroscopy analysis of the reactor walls shows that during Si etching in Cl2/O2 plasmas, the initial Al2O3 chamber walls are coated with a thin SiOCl layer. Broadband absorption spectroscopy with UV light emitting diodes is used to measure the densities of SiClX radicals (X = 0-2) and Cl2 molecules in steady state plasmas running with the chamber walls coated with different materials. To estimate the surface sticking/recombination probability of these radicals on different surfaces, we have performed time-resolved absorption measurements in the afterglow of pulsed discharges. Our work, in agreement with previous results, shows that the Cl2/Cl density ratio in the discharge is driven mainly by the chemical nature of the chamber walls explaining why process drifts are often observed in Cl2/O2 plasmas. The recombination coefficient of Cl atoms on SiOCl surfaces is about 0.007, while it is about 0.1 on clean walls (AlF3). Based on these results, we discuss the best strategy leading to reproducible process control, the present strategy being a systematic reactor cleaning/conditioning between wafers. The SiOCl layer deposition mechanism is then discussed in detail. The sticking coefficient of SiCl on this surface is near unity, while SiCl2 appears to be weakly reactive toward it. Therefore, SiCl (and SiCl+ ions) are the main vectors of Si deposition on the reactor walls, where their subsequent oxidization by O atoms leads to the formation of a SiOCl deposit. Furthermore, we show that SiCl reaction in the plasma volume with Cl2, through the exchange reaction SiCl + Cl2 → Si

  5. Particle behavior in an ECR plasma etch tool

    SciTech Connect

    Blain, M.G.; Tipton, G.D.; Holber, W.M.; Westerfield, P.L.; Maxwell, K.L.

    1993-09-01

    Sources of particles in a close-coupled electron cyclotron resonance (ECR) polysilicon plasma etch source include flaking of films deposited on chamber surfaces, and shedding of material from electrostatic wafer chucks. A large, episodic increase in the number of particles added to a wafer in a clean system is observed more frequently for a plasma-on than for a gas-only source condition. For polymer forming process conditions, particles were added to wafers by a polymer film which was observed to fracture and flake away from chamber surfaces. The presence of a plasma, especially when rf bias is applied to the wafer, caused more particles to be ejected from the walls and added to wafers than the gas-only condition; however, no significant influence was observed with different microwave powers. A study of effect of electrode temperatures on particles added showed that thermophoretic forces are not significant for this ECR configuration. Particles originating from the electrostatic chuck were observed to be deposited on wafers in much larger numbers in the presence of the plasma as compared to gas-only conditions.

  6. Reactive Plasma Etching of SiC in a Tetrafluoroethane / Oxygen Plasma

    NASA Astrophysics Data System (ADS)

    McDonald, James S.; Radican, Kevin; Botello, Eric; Koeck, Deborah C.; Donnelly, David; Geerts, Wilhelmus; Spencer, Gregory; Galloway, Heather C.

    2003-10-01

    Fabrication of waveguides for electrical characterization of dielectric thin films requires a method of etching SiC and SiCN. A method of RF plasma etching was developed to ensure proper ground contact between the substrate and the ground lines. A constant flow of HFC 134a was investigated as compared to various oxygen flow rates, in order to determine the right mixture of HFC 134a and O_2, and the respective etch rate. This presentation will describe the method and techniques that were implemented using a magnetron gun attached to an RF network as a plasma source and a mixture of tetrafluoroethane or HFC 134a and O2 as the process gas.

  7. Fabrication of resonator-quantum well infrared photodetector focal plane array by inductively coupled plasma etching

    NASA Astrophysics Data System (ADS)

    Sun, Jason; Choi, Kwong-Kit

    2016-02-01

    Inductively coupled plasma (ICP) etching has distinct advantages over reactive ion etching in that the etching rates are considerably higher, the uniformity is much better, and the sidewalls of the etched material are highly anisotropic due to the higher plasma density and lower operating pressure. Therefore, ICP etching is a promising process for pattern transfer required during microelectronic and optoelectronic fabrication. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). To fabricate R-QWIP focal plane arrays (FPAs), two optimized ICP etching processes are developed. Using these etching techniques, we have fabricated R-QWIP FPAs of several different formats and pixel sizes with the required dimensions and completely removed the substrates of the FPAs. Their QE spectra were tested to be 30 to 40%. The operability and spectral nonuniformity of the FPA is ˜99.5 and 3%, respectively.

  8. High-Density Plasma Etching of Group-III Nitride Films for Device Application

    SciTech Connect

    Baca, A.G.; Crawford, M.H.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-02-17

    As III-V nitride device structures become more complicated and design rules shrink, well-controlled etch processes are necessary. Due to limited wet chemical etch results for the group-III nitrides, a significant amount of effort has been devoted to the development of dry etch processing. Dry etch development was initially focused on mesa structures where high etch rates, anisotropic profiles, smooth sidewalls, and equi-rate etching of dissimilar materials were required. For example, commercially available LEDs and laser facets for GaN-based laser diodes have been patterned using reactive ion etching (RIE). With the recent interest in high power, high temperature electronic devices, etch characteristics may also require smooth surface morphology, low plasma-induced damage, and selective etching of one layer over another. The principal criteria for any plasma etch process is its utility in the fabrication of a device. In this study, we will report plasma etch results for the group-III nitrides and their application to device structures.

  9. Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaolong; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Xu, Xiangdong; Hong, Yilin; Fu, Shaojun

    2015-11-01

    In this work, we introduce an optimum ICP etching technique that successfully removes the subsurface damage (SSD) layer of fused silica without causing plasma induced surface damage (PISD) or lateral etching of SSD. As one of the commonest PISD initiators, metal contamination from reactor chamber is prevented by employing a simple isolation device. Based on this device, a unique low-density pitting damage is discovered and subsequently eliminated by optimizing the etching parameters. Meanwhile etching anisotropy also improves a lot, thus preventing the lateral etching of SSD. Using this proposed technique, SSD layer of fused silica is successfully removed with a surface roughness of 0.23 nm.

  10. LOW TEMPERATURE PLASMA ETCHING OF COPPER FOR MINIMIZING SIZE EFFECTS IN SUB-100 NM FEATURES

    SciTech Connect

    Kulkarni, Nagraj S; Tamirisa, Prabhakar; Levitin, Galit; Kasica, Richard J; Hess, Dennis W

    2006-01-01

    A low temperature plasma etching process for patterning copper interconnects is proposed as a solution to the size effect issue in the resistivity of copper. Key features of this etching process based on a previous thermochemical analysis of the Cu-Cl-H system are discussed. Potential benefits of a subtractive etching scheme based on this process in comparison with the damascene scheme for copper-based interconnect processing in sub-100 nm features are presented in the context of the ITRS roadmap. Preliminary experimental work on plasma etching of Cu thin films using the proposed process is discussed.

  11. Hydrogen manufacturing using plasma reformers

    SciTech Connect

    Bromberg, L.; Cohn, D.R.; Rabinovich, A.; Hochgreb, S.; O`Brien, C.

    1996-10-01

    Manufacturing of hydrogen from hydrocarbon fuels is needed for a variety of applications. These applications include fuel cells used in stationary electric power production and in vehicular propulsion. Hydrogen can also be used for various combustion engine systems. There is a wide range of requirements on the capacity of the hydrogen manufacturing system, the purity of the hydrogen fuel, and capability for rapid response. The overall objectives of a hydrogen manufacturing facility are to operate with high availability at the lowest possible cost and to have minimal adverse environmental impact. Plasma technology has potential to significantly alleviate shortcomings of conventional means of manufacturing hydrogen. These shortcomings include cost and deterioration of catalysts; limitations on hydrogen production from heavy hydrocarbons; limitations on rapid response; and size and weight requirements. In addition, use of plasma technology could provide for a greater variety of operating modes; in particular the possibility of virtual elimination of CO{sub 2} production by pyrolytic operation. This mode of hydrogen production may be of increasing importance due to recent additional evidence of global warming.

  12. Formation of plasma induced surface damage in silica glass etching for optical waveguides

    NASA Astrophysics Data System (ADS)

    Choi, D. Y.; Lee, J. H.; Kim, D. S.; Jung, S. T.

    2004-06-01

    Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP (inductively coupled plasma) with chrome etch masks, which were patterned by reactive ion etching (RIE) using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough (root-mean square roughness greater than 100 nm) and we call this phenomenon plasma induced surface damage (PISD). Rough surface cannot be used as a platform for hybrid integration because of difficulty in alignment and bonding of active devices. PISD reduces the etch rate of glass and it is very difficult to remove residues on a rough surface. The objective of this study is to elucidate the mechanism of PISD formation. To achieve this goal, PISD formation during different etching conditions of chrome etch mask and silica glass was investigated. In most cases, PISD sources are formed on a glass surface after chrome etching, and metal compounds are identified in theses sources. Water rinse after chrome etching reduces the PISD, due to the water solubility of metal chlorides. PISD is decreased or even disappeared at high power and/or low pressure in glass etching, even if PISD sources were present on the glass surface before etching. In conclusion, PISD sources come from the chrome etching process, and polymer deposition on these sources during the silica etching cause the PISD sources to grow. In the area close to the PISD source there is a higher ion flux, which causes an increase in the etch rate, and results in the formation of a pit.

  13. Novel spin-on organic hardmask with high plasma etch resistance

    NASA Astrophysics Data System (ADS)

    Oh, Chang-Il; Lee, Jin-Kuk; Kim, Min-Soo; Yoon, Kyong-Ho; Cheon, Hwan-Sung; Tokareva, Nataliya; Song, Jee-Yun; Kim, Jong-Seob; Chang, Tu-Won

    2008-03-01

    In recent years for memory devices under 70nm using ArF lithography, spin-on organic hardmask has become an attractive alternative process to amorphous carbon layer hardmark (ACL) in mass production due to ACL hardmask's limited capacity, high cost-of-ownership, and low process efficiency in spite of its excellent etch performance. However, insufficient plasma etch resistance of spin-on hardmask makes the etch process an issue resulting in inadequate vertical profiles, large CD bias, and narrow etch process window compared to ACL hardmask. In order to be able to apply these spin on hardmasks to varies layers including critical layers, the aforementioned problems need to be resolved and verified using several evaluation methods including etch pattern evaluation. In this paper, we report the synthesis of novel organic spin-on hardmasks (C-SOH) that incorporate various fused aromatic moieties into polymer chain and the evaluation of etch performance using dry etch tools. Organic spin-on hardmasks with 79-90 wt% carbon contents were synthesized in-house. Oxygen and fluorine based plasma etch processes were used to evaluate the etch resistance of the C-SOH. The results show our 3rd generation C-SOH has etch profiles comparable to that of ACL in a 1:1 dense pattern.

  14. Etching mechanism of niobium in coaxial Ar/Cl{sub 2} radio frequency plasma

    SciTech Connect

    Upadhyay, J.; Im, Do; Popović, S.; Vušković, L.; Valente-Feliciano, A.-M.; Phillips, L.

    2015-03-21

    The understanding of the Ar/Cl{sub 2} plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial radio-frequency (rf) discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, rf power, dc bias, Cl{sub 2} concentration, diameter of the inner electrode, temperature of the outer cylinder, and position of the samples in the structure is determined. To understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  15. Etching mechanism of niobium in coaxial Ar/Cl2 radio frequency plasma

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Popovic, Svetozar; Valente-Feliciano, Anne -Marie; Phillips, H. Larry; Vuskovic, Leposova

    2015-03-18

    The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial radio-frequency (rf) discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, rf power, dc bias, Cl2 concentration, diameter of the inner electrode, temperature of the outer cylinder, and position of the samples in the structure is determined. Furthermore, to understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  16. A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

    SciTech Connect

    Gul, Banat; Aman-ur-Rehman

    2015-10-15

    Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr{sup +}, Br{sup +}, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBr by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.

  17. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

    SciTech Connect

    SHUL,RANDY J.; ZHANG,LEI; BACA,ALBERT G.; WILLISON,CHRISTI LEE; HAN,JUNG; PEARTON,S.J.; REN,F.

    1999-11-03

    Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V.

  18. Etching of organosilicate glass low-k dielectric films in halogen plasmas

    NASA Astrophysics Data System (ADS)

    Vitale, Steven A.; Sawin, Herbert H.

    2002-05-01

    The chemistry and kinetics of alternative etching chemistries for low-k dielectric materials are explored to improve the anisotropy of the etching process and to reduce the problems associated with postetch clean-up. Etching rates, selectivities, and etching yields of Black Diamond and Coral organosilicate glasses (OSGs) have been measured. Black Diamond and Coral are etched rapidly in F2, Cl2, and HBr high density plasmas, and Cl2+HBr plasmas have been identified as a viable process chemistry with several advantages over traditional fluorocarbon plasmas. The OSG films are not spontaneously etched by F2, Cl2, HBr molecules, Cl, or Br atoms, however, F atoms etch the OSGs spontaneously. F, Cl, and H atoms extract a substantial amount of carbon from the films, but Cl and H do not attack the OSG oxide matrix. The Coral films are more strongly depleted of carbon after halogen plasma etching than the Black Diamond. In addition, oxygen atoms extract nearly all of the carbon and nitrogen from the OSGs, leaving a stoichiometric SiO2 layer.

  19. Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

    SciTech Connect

    Zhu, Weiye; Sridhar, Shyam; Liu, Lei; Hernandez, Eduardo; Donnelly, Vincent M. Economou, Demetre J.

    2014-05-28

    Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.

  20. Model Etch Profiles for Ion Energy Distribution Functions in an Inductively Coupled Plasma Reactor

    SciTech Connect

    Abraham-Shrauner, B.; Chen, W.; Woodworth, J.R.

    1998-12-14

    Rectangular trench profiles are modeled with analytic etch rates determined from measured ion distribution functions. The pattern transfer step for this plasma etch is for trilayer lithography. Argon and chlorine angular ion energy distribution functions measured by a spherical collector ring analyzer are fit to a sum of drifting Maxwellian velocity distribution functions with anisotropic temperatures. The fit of the model ion distribution functions by a simulated annealing optimization procedure converges adequately for only two drifting Maxwellians. The etch rates are proportional to analytic expressions for the ion energy flux. Numerical computation of the etch profiles by integration of the characteristic equations for profile points and connection of the profiles points is efficient.

  1. Solid polymer electrolyte composite membrane comprising plasma etched porous support

    DOEpatents

    Liu, Han; LaConti, Anthony B.

    2010-10-05

    A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

  2. Extreme monolayer-selectivity of hydrogen-plasma reactions with graphene.

    PubMed

    Diankov, Georgi; Neumann, Michael; Goldhaber-Gordon, David

    2013-02-26

    We study the effect of remote hydrogen plasma on graphene deposited on SiO₂. We observe strong monolayer selectivity for reactions with plasma species, characterized by isotropic hole formation in the basal plane of monolayers and etching from the sheet edges. The areal density of etch pits on monolayers is 2 orders of magnitude higher than on bilayers or thicker sheets. For bilayer or thicker sheets, the etch pit morphology is also quite different: hexagonal etch pits of uniform size, indicating that etching is highly anisotropic and proceeds from pre-existing defects rather than nucleating continuously as on monolayers. The etch rate displays a pronounced dependence on sample temperature for monolayer and multilayer graphene alike: very slow at room temperature, peaking at 400 °C and suppressed entirely at 700 °C. Applying the same hydrogen plasma treatment to graphene deposited on the much smoother substrate mica leads to very similar phenomenology as on the rougher SiO₂, suggesting that a factor other than substrate roughness controls the reactivity of monolayer graphene with hydrogen plasma species. PMID:23327591

  3. Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

    NASA Astrophysics Data System (ADS)

    Matsutani, Akihiro; Ishiwari, Fumitaka; Shoji, Yoshiaki; Kajitani, Takashi; Uehara, Takuya; Nakagawa, Masaru; Fukushima, Takanori

    2016-06-01

    We report the etching properties of tripodal paraffinic triptycene (TripC12) used as a thermal nanoimprint lithography (TNIL) resist mask in Cl2 plasma etching. Using thermally nanoimprinted TripC12 films, we achieved microfabrication of a GaAs substrate by Cl2-based inductively coupled plasma (ICP) etching. Attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy confirmed that the chemical structure of TripC12 remains intact after the ICP etching process using Cl2. We believe that TNIL using TripC12 films is useful for fabricating optical/electrical devices and micro-electro-mechanical systems (MEMSs).

  4. Deep GaN etching by inductively coupled plasma and induced surface defects

    SciTech Connect

    Ladroue, J.; Meritan, A.; Boufnichel, M.; Lefaucheux, P.; Ranson, P.; Dussart, R.

    2010-09-15

    GaN etching was studied in Cl{sub 2}/Ar plasmas as a function of process parameters. In addition, for a better understanding of the etching mechanisms, Langmuir probe measurements and optical emission spectroscopy were carried out. Etch rate was found to depend strongly on bias power. After optimization, an etch rate greater than 1000 nm/min was achieved. A second part of this work is dedicated to the etched surface defects. An original method to estimate GaN dislocation density and to localize nanopipes in the material is presented. Columnar defects could also appear with impurities in the etching reactor. The authors also present a possible formation mechanism of those columnar defects.

  5. Inductively coupled plasma etching of HgCdTe IRFPAs detectors at cryogenic temperature

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Zhang, S.; Hu, X. N.; Ding, R. J.; He, L.

    2016-05-01

    To fabricate various advanced structures with HgCdTe material, the Inductively Coupled Plasma enhanced Reactive Ion Etching system is indispensable. However, due to low damage threshold and complicated behaviors of mercury in HgCdTe, the lattice damage and induced electrical conversion is very common. According to the diffusion model during etching period, the mercury interstitials, however, may not diffuse deep into the material at cryogenic temperature. In this report, ICP etching of HgCdTe at cryogenic temperature was implemented. The etching system with cryogenic assembly is provided by Oxford Instrument. The sample table was cooled down to 123K with liquid nitrogen. The mask of SiO2 with a contact layer of ZnS functioned well at this temperature. The selectivity and etching velocity maintained the same as reported in the etching of room temperature. Smooth and clean surfaces and profiles were achieved with an optimized recipe.

  6. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-05-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1-x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1-x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1-x Cd x Te etch rate. It is also observed that the exposed Hg1-x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1-x Cd x Te etch rate. Further, the exposed Hg1-x Cd x Te area is shown to affect the etch rate of the Hg1-x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1-x Cd x Te are listed, herein.

  7. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  8. Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10Boron films

    SciTech Connect

    Voss, L F; Reinhardt, C E; Graff, R T; Conway, A M; Nikolic, R J; Deo, N; Cheung, C L

    2009-02-23

    Isotopically enriched {sup 10}boron films have been successfully etched in an ECR etching tool using CF{sub 4} and SF{sub 6} based plasmas. Comparisons between the two are made with regards to etch rate, selectivity to the underlying Si device structure, and morphology of the {sup 10}boron post-etching. The present film etching development is expected to be critical for the fabrication of next generation thermal neutron solid state detectors based on {sup 10}boron.

  9. Effects of plasma etching on orientation ratio for longitudinal recording media

    NASA Astrophysics Data System (ADS)

    Huang, L.; Wang, J. P.

    2002-05-01

    Studies on the effects of rf plasma etching treatment on textured NiP/Al substrate on the properties of CoCrTaPt/CrMo longitudinal recording media were carried out. The dependence of coercivity (Hc), coercivity orientation ratio (OR), and disk surface roughness (Ra) on etching parameters, i.e., etching time, pressure, and power, were presented. It was found that by optimizing the etching process parameters, an increase of Hc and OR and a decrease of Ra could be achieved. It was observed that good preferred orientation is necessary for obtaining high OR. The increase of OR could be attributed to the cleaning effect or surface modification by the rf plasma etching treatment on the textured substrate.

  10. Plasma etching of Hf-based high-k thin films. Part III. Modeling the reaction mechanisms

    SciTech Connect

    Martin, Ryan M.; Chang, Jane P.

    2009-03-15

    A generalized etch rate model was formulated to describe metal oxide etching in complex plasma chemistries, based on the understanding gained from detailed plasma characterization and experimental investigation into the metal oxide etching mechanisms. Using a surface site balance-based approach, the correct etch rate dependencies on neutral-to-ion flux ratio, ion energy, competing deposition and etching reaction pathways, and film properties were successfully incorporated into the model. The applicability of the model was assessed by fitting to experimental etch rate data in both Cl{sub 2} and BCl{sub 3} chemistries. Plasma gas phase analysis as well as etch and deposition rate measurements were used to calculate initial values and appropriate ranges for model parameter variation. Physically meaningful parameter values were extracted from the modeling fitting to the experimental data, thereby demonstrating the applicability of this model in assessing the plasma etching of other complex materials systems.

  11. Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

    SciTech Connect

    Kuboi, Nobuyuki Tatsumi, Tetsuya; Kinoshita, Takashi; Shigetoshi, Takushi; Fukasawa, Masanaga; Komachi, Jun; Ansai, Hisahiro

    2015-11-15

    The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness, etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching

  12. Insights into Plasma Etch Profile Evolution with 3D Profile Simulation

    NASA Astrophysics Data System (ADS)

    Sriraman, Saravanapriyan; Paterson, Alex; Zhang, Yiting; Kushner, Mark

    2014-10-01

    Plasma etching is critical for pattern transfer in microelectronics fabrication. For planar devices, efforts in 2D etch profile simulations were sufficient to understand critical etch process mechanisms. In contrast, to understand the complex mechanisms in etching 3D structures of current technology nodes such as FinFETs, 2D profile simulators are inadequate. In this paper, we report on development of a 3D profile simulation platform, the Monte Carlo Feature Profile Model (MCFPM-3D). The MCFPM-3D builds upon the 2D MCFPM platform that includes aspects such as mixing, implantation, and photon assisted processes and addresses reaction mechanisms in surface etching, sputtering, and deposition to predict profile evolution. Model inputs include fluxes of species from plasma derived from the Hybrid Plasma Equipment Model (HPEM). Test cases of Si/SiO2 etching in Ar/Cl2 and Ar/CF4/O2 plasmas for representative 2D/3D feature topographies are considered and phenomena such as selectivity and aspect ratio dependent etching will be discussed.

  13. Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3

    NASA Astrophysics Data System (ADS)

    Cao, Yu-Chao; Zhao, Lei; Luo, Jin; Wang, Ke; Zhang, Bo-Ping; Yokota, Hiroki; Ito, Yoshiyasu; Li, Jing-Feng

    2016-03-01

    The plasma etching behavior of Y2O3 coating was investigated and compared with that of Al2O3 coating under various conditions, including chemical etching, mixing etching and physical etching. The etching rate of Al2O3 coating declined with decreasing CF4 content under mixing etching, while that of Y2O3 coating first increased and then decreased. In addition, the Y2O3 coating demonstrated higher erosion-resistance than Al2O3 coating after exposing to fluorocarbon plasma. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formations of YF3 and AlF3 on the Y2O3 and Al2O3 coatings, respectively, which acted as the protective layer to prevent the surface from further erosion with fluorocarbon plasma. It was revealed that the etching behavior of Y2O3 depended not only on the surface fluorination but also on the removal of fluoride layer. To analyze the effect of porosity, Y2O3 bulk samples with high density were prepared by spark plasma sintering, and they demonstrated higher erosion-resistances compared with Y2O3 coating.

  14. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    NASA Astrophysics Data System (ADS)

    Tamulevičius, Tomas; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-01

    We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6-12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet-visible light (UV-VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2-6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined processing employing aluminum mask resulted in nanocomposite material (DLC:Ag) micropatterns.

  15. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    NASA Astrophysics Data System (ADS)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

    2015-03-01

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  16. A photoluminescence study of plasma reactive ion etching-induced damage in GaN

    NASA Astrophysics Data System (ADS)

    Mouffak, Z.; Bensaoula, A.; Trombetta, L.

    2014-11-01

    GaN films with reactive ion etching (RIE) induced damage were analyzed using photoluminescence (PL). We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with previous studies. While both the control and damaged samples have their band-edge peak location change with temperature following the Varshni formula, its intensity however decreases with damage while the D—A peak increases considerably. Nitrogen post-etch plasma was shown to improve the band edge peak and decrease the D—A peak. This suggests that the N2 plasma has helped reduce the number of trapped carriers that were participating in the D—A transition and made the D°X transition more active, which reaffirms the N2 post-etch plasma treatment as a good technique to heal the GaN surface, most likely by filling the nitrogen vacancies previously created by etch damage.

  17. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    SciTech Connect

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  18. A statistical approach to optimization of alumina etching in a high density plasma

    SciTech Connect

    Li Xiao; Gupta, Subhadra; Highsmith, Alton; Paranjpe, Ajit; Rook, Katrina

    2008-08-01

    Inductively coupled plasma (ICP) reactive ion etching of Al{sub 2}O{sub 3} with fluorine-based gas chemistry in a high density plasma reactor was carried out in an initial investigation aimed at data storage applications. A statistical design of experiments was implemented to optimize etch performance with respect to process variables such as ICP power, platen power, direct current (dc) bias, and pressure. Both soft photoresist masks and hard metal masks were investigated in terms of etch selectivity and surface properties. The reverse power dependence of dc bias on the ratio of ICP to platen power was elucidated. Etch mechanisms in terms of physical and ion enhanced chemical etchings were discussed. The F-based chemistry greatly enhances the etch rate of alumina compared to purely physical processes such as ion milling. Etch rates as high as 150 nm/min were achieved using this process. A practical process window was developed for high etch rates, with reasonable selectivity to hard masks, with the desired profile, and with low substrate bias for minimal damage.

  19. Fabrication of vertical mirrors using plasma etch and KOH:IPA polishing

    NASA Astrophysics Data System (ADS)

    Agarwal, R.; Samson, S.; Bhansali, S.

    2007-01-01

    A new approach to etch structures with vertical sidewalls in Si is presented in this paper. This process reduces the loading effect in deep reactive ion etching (DRIE) and maintains a uniform etch profile and etch rate throughout the wafer. Shallow areas were patterned under the regions to be removed. The wafer was then bonded to a pyrex wafer which acts as a handle wafer and as a package lid for packaging MEMS devices. Uniform width narrow channels encompassing these shallow patterns were then subjected to long through wafer DRIE. These narrow channels maintain uniform etch rates while patterning structures with various fill factors on the same wafer. Various structures were etched with vertical side walls across the 550 µm thick Si wafer. Average side wall angles of 89.8° were obtained with just 0.3° variation across the 4'' Si wafer. The process showed resistance to slight variations in DRIE parameters with a negligible effect on the sidewall profile. Additionally, the verticality of the structures was improved to 90.08° by performing KOH:IPA wet etching on the plasma etched surfaces. Once characterized, the same processes can be used for various shape/size structures. These etched vertical mirrors were used to assemble a corner cube retroreflector.

  20. Suppression of plasma-induced damage on GaN etched by a Cl2 plasma at high temperatures

    NASA Astrophysics Data System (ADS)

    Liu, Zecheng; Pan, Jialin; Kako, Takashi; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

    2015-06-01

    Plasma-induced damage (PID) during plasma-etching processes was suppressed by the application of Cl2 plasma etching at an optimal temperature of 400 °C, based on results of evaluations of photoluminescence (PL), stoichiometric composition, and surface roughness. The effects of ions, photons, and radicals on damage formation were separated from the effects of plasma using the pallet for plasma evaluation (PAPE) method. The PID was induced primarily by energetic ion bombardments at temperatures lower than 400 °C and decreased with increasing temperature. Irradiations by photons and radicals were enhanced to form the PID and to develop surface roughness at temperatures higher than 400 °C. Consequently, Cl2 plasma etching at 400 °C resulted optimally in low damage and a stoichiometric and smooth GaN surface.

  1. Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation

    NASA Astrophysics Data System (ADS)

    Fukasawa, Masanaga; Miyawaki, Yudai; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Sekine, Makoto; Matsugai, Hiroyasu; Honda, Takayoshi; Minami, Masaki; Uesawa, Fumikatsu; Hori, Masaru; Tatsumi, Tetsuya

    2012-02-01

    Photon-enhanced etching of SiNx:H films caused by the interaction between vacuum ultraviolet (VUV)/ultraviolet (UV) radiation and radicals in the fluorocarbon plasma was investigated by a technique with a novel sample setup of the pallet for plasma evaluation. The simultaneous injection of UV radiation and radicals causes a dramatic etch rate enhancement of SiNx:H films. Only UV radiation causes the film shrinkage of SiNx:H films owing to hydrogen desorption from the film. Capacitance-voltage characteristics of SiNx:H/Si substrates were studied before and after UV radiation. The interface trap density increased monotonically upon irradiating the UV photons with a wavelength of 248 nm. The estimated effective interface trap generation probability is 4.74 ×10-7 eV-1·photon-1. Therefore, the monitoring of the VUV/UV spectra during plasma processing and the understanding of its impact on the surface reaction, film damage and electrical performance of underlying devices are indispensable to fabricate advanced devices.

  2. Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

    NASA Technical Reports Server (NTRS)

    Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

    1998-01-01

    The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

  3. Charging effect simulation model used in simulations of plasma etching of silicon

    SciTech Connect

    Ishchuk, Valentyn; Volland, Burkhard E.; Hauguth, Maik; Rangelow, Ivo W.; Cooke, Mike

    2012-10-15

    Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching. We have developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process. The model is fully integrated into ViPER (Virtual Plasma Etch Reactor)-a full featured plasma processing simulation software developed at Ilmenau University of Technology. As a consequence, we show that local surface charge concurrently evolves with the feature profile to affect the final shape of the etched feature. Using gas chopping (sometimes called time-multiplexed) etch process for experimental validation of the simulation, we show that the model provides excellent fits to the experimental data and both, bowing and notching effects are captured-as long as the evolving profile and surface charge are simultaneously simulated. In addition, this new model explains that surface scallops, characteristic of gas chopping technique, are eroded and often absent in the final feature profile due to surface charging. The model is general and can be applied across many etching chemistries.

  4. The effect of temperature and flow rate on aluminum etch rates in RF plasmas

    SciTech Connect

    Danner, D.A.; Hess, D.W.

    1986-01-01

    The effect of sample temperature and etch gas flow rate on the etching of aluminum in BCl/sub 3//Cl/sub 2/ and CCl/sub 4//Cl/sub 2/ mixtures in a parallel-plate plasma etcher was investigated. Through the use of a thermally conductive epoxy to ensure good heat-transfer, sample heating due to exothermic chemical reactions and plasma heating was found to result in a temperature difference of more than 100/sup 0/C between bonded and unbonded samples. Thus, considerable increases in etch rate were observed for the unbonded samples. Etch nonuniformities during both the inhibition period and metal etching were studied, using different plasma conditions and a nozzle to deliver chlorine directly to the aluminum surface. Oxide etching depended upon ion flux and/or energy and upon the concentration of BCl/sub X/ or CCl/sub X/ species, while Cl/sub 2/ concentration at the sample surface determined the relative aluminum etch rates across the aluminum sample.

  5. Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

    SciTech Connect

    Li, Hu; Muraki, Yu; Karahashi, Kazuhiro; Hamaguchi, Satoshi

    2015-07-15

    Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +} or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.

  6. Formation of PtSi Schottky barrier MOSFETs using plasma etching

    SciTech Connect

    Woo, Young Min; Hwang, Wan Sik; Yoo, Won Jong

    2015-03-15

    PtSi Schottky barrier (SB) MOSFETs were fabricated and their device performance was characterized. PtSi was selected instead of NiSi to form the p-type SB junction since such a configuration would be easy to fabricate through SF{sub 6} based plasma etching. The addition of He-O{sub 2} in SF{sub 6} decreases the etching rate of PtSi while the etching rate of Pt remains unchanged. The retardation in the etching rate of PtSi in He-O{sub 2}/SF{sub 6} is attributed to the formation of a metal oxide on the etched PtSi surface, as evidenced by the x-ray photoelectron spectroscopy results. Optical emission spectroscopy was conducted to establish the endpoint where the wavelength from the feed gas was traced instead of tracing the etching by-products since the by-products have little association with the plasma reaction. The I{sub DS}–V{sub DS} curves at various V{sub G}–V{sub TH} indicate that plasma etching resulted in the successful removal of the Pt on the sidewall region, with negligible damage to the S/D area.

  7. Charging effect simulation model used in simulations of plasma etching of silicon

    NASA Astrophysics Data System (ADS)

    Ishchuk, Valentyn; Volland, Burkhard E.; Hauguth, Maik; Cooke, Mike; Rangelow, Ivo W.

    2012-10-01

    Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching. We have developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process. The model is fully integrated into ViPER (Virtual Plasma Etch Reactor)—a full featured plasma processing simulation software developed at Ilmenau University of Technology. As a consequence, we show that local surface charge concurrently evolves with the feature profile to affect the final shape of the etched feature. Using gas chopping (sometimes called time-multiplexed) etch process for experimental validation of the simulation, we show that the model provides excellent fits to the experimental data and both, bowing and notching effects are captured—as long as the evolving profile and surface charge are simultaneously simulated. In addition, this new model explains that surface scallops, characteristic of gas chopping technique, are eroded and often absent in the final feature profile due to surface charging. The model is general and can be applied across many etching chemistries.

  8. 3-Dimensional Modeling of Capacitively and Inductively Coupled Plasma Etching Systems

    NASA Astrophysics Data System (ADS)

    Rauf, Shahid

    2008-10-01

    Low temperature plasmas are widely used for thin film etching during micro and nano-electronic device fabrication. Fluid and hybrid plasma models were developed 15-20 years ago to understand the fundamentals of these plasmas and plasma etching. These models have significantly evolved since then, and are now a major tool used for new plasma hardware design and problem resolution. Plasma etching is a complex physical phenomenon, where inter-coupled plasma, electromagnetic, fluid dynamics, and thermal effects all have a major influence. The next frontier in the evolution of fluid-based plasma models is where these models are able to self-consistently treat the inter-coupling of plasma physics with fluid dynamics, electromagnetics, heat transfer and magnetostatics. We describe one such model in this paper and illustrate its use in solving engineering problems of interest for next generation plasma etcher design. Our 3-dimensional plasma model includes the full set of Maxwell equations, transport equations for all charged and neutral species in the plasma, the Navier-Stokes equation for fluid flow, and Kirchhoff's equations for the lumped external circuit. This model also includes Monte Carlo based kinetic models for secondary electrons and stochastic heating, and can take account of plasma chemistry. This modeling formalism allows us to self-consistently treat the dynamics in commercial inductively and capacitively coupled plasma etching reactors with realistic plasma chemistries, magnetic fields, and reactor geometries. We are also able to investigate the influence of the distributed electromagnetic circuit at very high frequencies (VHF) on the plasma dynamics. The model is used to assess the impact of azimuthal asymmetries in plasma reactor design (e.g., off-center pump, 3D magnetic field, slit valve, flow restrictor) on plasma characteristics at frequencies from 2 -- 180 MHz. With Jason Kenney, Ankur Agarwal, Ajit Balakrishna, Kallol Bera, and Ken Collins.

  9. Inductively Coupled Plasma Etching of III-V Antimonides in BCl(3)/Ar and Cl(2)/Ar

    SciTech Connect

    Leavitt, R.P.; Lester, L.F.; Shul, R.J.; Willison, C.G.; Zhang, L.

    1998-11-04

    Inductively coupled plasma (ICP) etching characteristics of GaSb and AIGaAsSb have been investigated in BC13/Ar and Clz/Ar plasmas. The etch rates and selectivity between GaSb and AIGaAsSb are reported as functions of plasma chemistry, ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering resorption of the etch products plays a dominant role in BC13/Ar ICP etching, while in Clz/Ar plasma, the chemical reaction dominates the etching. GaSb etch rates exceeding 2 ~rnhnin are achieved in Clz/Ar plasmas with smooth surfaces and anisotropic profiles. In BC13/Ar plasmas, etch rates of 5100 Mmin and 4200 Mmin are obtained for GaSb and AIGaAsSb, respectively. The surfaces of both GaSb and AIGaAsSb etched in BC13/Ar plasmas remain smooth and stoichiometric over the entire range of plasma conditions investigated. This result is attributed to effective removal of etch products by physical sputtering. For a wide range of plasma conditions, the selectivity between GaSb and AIGaAsSb is close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-IR laser diodes.

  10. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas

    PubMed Central

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

  11. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    SciTech Connect

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  12. Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN

    SciTech Connect

    Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R.; Shul, R.J.; McLane, G.F.; Ren, F.

    1996-04-01

    Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

  13. Atomic-layer etching of Ge using an ultraclean ECR plasma

    NASA Astrophysics Data System (ADS)

    Sugiyama, Takayuki; Matsuura, Takashi; Murota, Junichi

    1997-03-01

    Self-limited atomic-layer etching of Ge(100) has been investigated by alternated chlorine adsorption and Ar + ion irradiation using an ultraclean ECR plasma. With short Ar + ion irradiation, about a quarter of atomic-layer thickness was etched in each cycle under the saturated adsorption condition, which corresponds with the case of Si(100). With increasing irradiation amount of Ar + ions, the etch rate per cycle increases and tends to saturate to the atomic-layer thickness of Ge(100). Taking Ar + ion induced reaction into consideration, a simple exponentially-saturating equation well describes the atomic-layer etch rate of Ge. From measured Ar + ion flux density distribution, it is estimated that the energy of Ar + ions predominantly contributing to the atomic-layer etching of Ge is higher than the order of ˜13 eV.

  14. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect

    Shin, H.; Srivastava, S. N.; Ruzic, D. N.

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  15. Sensitivity Enhancement of RF Plasma Etch Endpoint Detection With K-means Cluster Analysis

    NASA Astrophysics Data System (ADS)

    Lee, Honyoung; Jang, Haegyu; Lee, Hak-Seung; Chae, Heeyeop

    2015-09-01

    Plasma etching process is the core process in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist, dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0% oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD. Plasma Etch, EPD, K-means Cluster Analysis.

  16. Effect of post-annealing on the plasma etching of graphene-coated-copper.

    PubMed

    Hui, L S; Whiteway, E; Hilke, M; Turak, A

    2014-01-01

    High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resistance to etching under plasma was examined to assess the mechanical robustness of the graphene on the Cu surface, analyzed using optical and Raman microscopies. We found a correlation between the post-annealing time and etching time for the complete removal of graphene from Cu. Etching rates, minimum etch times, and surface appearance were observed to vary depending on the etching plasma (air, oxygen or nitrogen). Oxygen plasmas were found to be the least aggressive, emphasizing the improved adhesion with post-annealing treatments. Our results imply that the etching of graphene on Cu, and hence the adhesion of graphene, can be controlled by proper annealing and choice of plasma gas. PMID:25465275

  17. Collector optic cleaning by in-situ hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Elg, Daniel T.; Panici, Gianluca A.; Srivastava, Shailendra N.; Ruzic, D. N.

    2015-03-01

    Extreme ultraviolet (EUV) lithography sources produce EUV photons by means of a hot, dense, highly-ionized Sn plasma. This plasma expels high-energy Sn ions and neutrals, which deposit on the collector optic used to focus the EUV light. This Sn deposition lowers the reflectivity of the collector optic, necessitating downtime for collector cleaning and replacement. A method is being developed to clean the collector with an in-situ hydrogen plasma, which provides hydrogen radicals that etch the Sn by forming gaseous SnH4. This method has the potential to significantly reduce collector-related source downtime. EUV reflectivity restoration and Sn cleaning have been demonstrated on multilayer mirror samples attached to a Sn-coated 300mm-diameter steel dummy collector driven at 300W RF power with 500sccm H2 and a pressure of 260mTorr. Use of the in-situ cleaning method is also being studied at industriallyapplicable high pressure (1.3 Torr). Plasma creation across the dummy collector surface has been demonstrated at 1.3 Torr with 1000sccm H2 flow, and etch rates have been measured. Additionally, etching has been demonstrated at higher flow rates up to 3200sccm. A catalytic probe has been used to measure radical density at various pressures and flows. The results lend further credence to the hypothesis that Sn removal is limited not by radical creation but by the removal of SnH4 from the plasma. Additionally, further progress has been made in an attempt to model the physical processes behind Sn removal.

  18. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

    SciTech Connect

    Economou, Demetre J.; Donnelly, Vincent M.

    2014-05-13

    Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

  19. o Dry etching characteristics of amorphous As2S3 film in CHF3 plasma

    NASA Astrophysics Data System (ADS)

    Choi, Duk-Yong; Madden, Steve; Rode, Andrei; Wang, Rongping; Luther-Davies, Barry

    2008-12-01

    The authors describe the dry etching characteristics of amorphous As2S3 films in CHF3 plasma and the development of an optimized fabrication process for compact waveguides. The observed etching behavior is due to the relative densities of fluorine atoms, polymer precursors, and ions in the plasma which are controlled by the process parameters. In particular, the flow rate of the CHF3 gas has a significant influence on the etched profile and surface roughness as well as the etch rate of the As2S3. The profile evolves from isotropic to vertical with the flow rate due to passivation by increasing polymer deposition on the sidewalls. Such passivation also helps achieve smooth sidewalls because it inhibits differential etching between the phases in the inherently phase-separated As2S3 film, which otherwise results in a grainy and rough etched surface. At the highest flow rate, however, excessive polymer deposition occurs and this results in positive-sloped sidewall and grassy etched surface due to micromasking.

  20. Correlation of plasma characteristics to etch rate and via sidewall angle in a deep reactive ion etch system using Langmuir probe and optical emission spectroscopy

    SciTech Connect

    Koirala, S. P.; Awaah, I.; Burkett, S. L.; Gordon, M. H.

    2011-01-15

    A Langmuir probe and optical emission spectroscopy were used in a deep reactive ion etch system to correlate plasma parameters (atomic fluorine and argon emission, electron density, ion density, and electron average energy) with the etch rate and via sidewall angle. All data were obtained for coil powers ranging from 200 to 800 W, platen powers ranging from 7 to 16 W, and pressure ranging from 3.8 to 62 mTorr with constant SF{sub 6} and Ar flow rates of 112 and 18 SCCM (SCCM denotes cubic centimeter per minute at STP), respectively. Results indicate that there is a correlation with etch rate for all plasma parameters except for argon emission. For argon emission, the etch rate exhibits a double-valued relation where the etch rate can either increase or decrease with increasing argon emission intensity due to changes in pressure which affect the energy coupling efficiency. As expected, the etch rate increases for measured increases in fluorine emission, electron density, and ion density. The etch rate, however, decreases with increasing average electron energy due to collision processes. In contrast, no correlation is observed between any of the measured plasma parameters with sidewall angle. The last result is consistent with the idea that sidewall angle is primarily controlled by the passivation cycle as opposed to the etching cycle, where all the authors' data were obtained.

  1. Plasma etching of HfO{sub 2} at elevated temperatures in chlorine-based chemistry

    SciTech Connect

    Helot, M.; Chevolleau, T.; Vallier, L.; Joubert, O.; Blanquet, E.; Pisch, A.; Mangiagalli, P.; Lill, T.

    2006-01-15

    Plasma etching of HfO{sub 2} at an elevated temperature is investigated in chlorine-based plasmas. Thermodynamic studies are performed in order to determine the most appropriate plasma chemistry. The theoretical calculations show that chlorocarbon gas chemistries (such as CCl{sub 4} or Cl{sub 2}-CO) can result in the chemical etching of HfO{sub 2} in the 425-625 K temperature range by forming volatile effluents such as HfCl{sub 4} and CO{sub 2}. The etching of HfO{sub 2} is first studied on blanket wafers in a high density Cl{sub 2}-CO plasma under low ion energy bombardment conditions (no bias power). Etch rates are presented and discussed with respect to the plasma parameters. The evolution of the etch rate as function of temperature follows an Arrhenius law indicating that the etching comes from chemical reactions. The etch rate of HfO{sub 2} is about 110 A /min at a temperature of 525 K with a selectivity towards SiO{sub 2} of 15. x-ray photoelectron spectroscopy analyses (XPS) reveal that neither carbon nor chlorine is detected on the HfO{sub 2} surface, whereas a chlorine-rich carbon layer is formed on top of the SiO{sub 2} surface leading to the selectivity between HfO{sub 2} and SiO{sub 2}. A drift of the HfO{sub 2} etch process is observed according to the chamber walls conditioning due to chlorine-rich carbon coatings formed on the chamber walls in a Cl{sub 2}-CO plasma. To get a very reproducible HfO{sub 2} etch process, the best conditioning strategy consists in cleaning the chamber walls with an O{sub 2} plasma between each wafer. The etching of HfO{sub 2} is also performed on patterned wafers using a conventional polysilicon gate. The first result show a slight HfO{sub 2} foot at the bottom of the gate and the presence of hafnium oxide-based residues in the active areas.

  2. O2 Plasma Etch Rate Reduction on Synchrotron Radiation Exposed PMMA Film

    NASA Astrophysics Data System (ADS)

    Saito, Kunio; Yoshikawa, Akira

    1987-09-01

    The etch rate of PMMA film in O2 plasma is found to be reduced by synchrotron radiation (SR) exposure. This phenomenon is accompanied by a reduction in film thickness. IR and XPS analyses reveal that this thickness reduction is caused by scission and removal of the ester side chain. Etch rate of the SR-exposed film decreases to about 1/3 of the unexposed film. This characteristic makes dry-development possible.

  3. Negative Ion Metal Etching by Employing Magnetic Filter in Halogen Plasma

    NASA Astrophysics Data System (ADS)

    Horiike, Y.

    1998-10-01

    To neutralize the positively charged-up bottom surfaces of high aspect ratio holes or gaps, generation of negative ions in halogen downstream plasmas and their alternate irradiation by the transformer coupling of the RF field with the electrode have been studied. In the previous work, the Si etching employing negative ions revealed the high etching reactivity which resulted from the fact that dominant negative species were formed by ions of atoms like F^- in SF6 and Cl^- in Cl2 plasmas. It is expected that the negative ion etching is more effective for metals because the metal bonding is weakened by supply of negative charge. Indeed, the Al-Si-Cu etch rate of 130 nm/sec was achieved. However, the negative ions are difficult to be introduced to an electrode covered by insulators such as an electrostatic chucking due to generation of the self biasing. To overcome this problem, the trapping of electrons was examined in the downstream choline plasma by employing a magnetic filter, which consisted of a pair of water-cooled high current coils set in the etching chamber. The ratio of positively biasing to negatively biasing saturation currents was reduced as low as several. However, at present still remained electrons generate a little self biasing, thus lowering Al etch rates.

  4. Uniform Plasma Etching of Complex Shaped Three Dimensional Niobium Structures for Particle Accelerators

    NASA Astrophysics Data System (ADS)

    Upadhyay, Janardan; Im, Do; Peshl, Jeremy; Popovic, Svetozar; Vuskovic, Lepsha; Phillips, Larry; Valente-Felliciano, Anne-Marie

    2014-10-01

    Complex shaped three dimensional niobium structures are used in particle accelerators as super conducting radio frequency (SRF) cavities. The inner surfaces of these structures have to be chemically etched for better performance, as SRF performance parameters are very sensitive to their properties. Plasma etching of inner surface of three dimensional niobium structures has not been reported even though plasma etching of niobium has been reported earlier for Josephson junction and other applications. We are proposing an RF capacitively coupled coaxial (ccp) plasma etching method for nano machining of niobium structures for SRF applications. We are using gas mixture of Argon and Chlorine. We report the effects of the pressure, RF power, gas concentration, shape and size of the inner electrode, temperature of the structure, DC bias voltage and residence time on the etch rate of the niobium. We also show the method to reduce the asymmetry effect in coaxial ccp by changing the shape of the inner electrode in cylindrical structure, as well as a method to overcome the severe loading effect in etching of 3D structures for uniform mass removal purpose. Supported by DOE under Grant No. DE-SC0007879. J.U. acknowledges support by JSA/DOE via DE-AC05-06OR23177.

  5. Etching of Niobium Sample Placed on Superconducting Radio Frequency Cavity Surface in Ar/CL2 Plasma

    SciTech Connect

    Janardan Upadhyay, Larry Phillips, Anne-Marie Valente

    2011-09-01

    Plasma based surface modification is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. It has been proven with flat samples that the bulk Niobium (Nb) removal rate and the surface roughness after the plasma etchings are equal to or better than wet etching processes. To optimize the plasma parameters, we are using a single cell cavity with 20 sample holders symmetrically distributed over the cell. These holders serve the purpose of diagnostic ports for the measurement of the plasma parameters and for the holding of the Nb sample to be etched. The plasma properties at RF (100 MHz) and MW (2.45 GHz) frequencies are being measured with the help of electrical and optical probes at different pressures and RF power levels inside of this cavity. The niobium coupons placed on several holders around the cell are being etched simultaneously. The etching results will be presented at this conference.

  6. Study of organic polymer thin-film etching by plasma beam irradiation

    SciTech Connect

    Kurihara, Kazuaki; Egami, Akihiro; Nakamura, Moritaka

    2005-10-15

    We investigated the etching characteristics of three kinds of methacrylate polymer films which have the same main chain with a different side chain using a plasma beam irradiation apparatus. The polymers are polytbutylmethacrylate (PtBuMA), polybenzylmethacrylate (PBMA), and polycyclohexylmethacrylate (PCHMA). The etch yield (EY) of PtBuMA was higher than those of the others in the case of N{sub 2} plasma beam. The EYs of PBMA and PCHMA increased with an increase in the ion energy of up to 330 eV and saturated at over 330 eV. On the other hand, that of PtBuMA was almost constant at the ion energy higher than 130 eV. It was supposed that nitridation of the polymer plays an important role in the enhancement of etching by N{sub 2} plasma. In the case of Ar plasma, EY increased linearly with an increase in the square root of ion energy for every polymer. In the case of H{sub 2} plasmas, EY scarcely depended on the ion energy regardless of the polymers. Etching behaviors with Ar and H{sub 2} plasma irradiation showed physical sputtering and chemical sputtering, respectively. The order of the magnitude of EY was PtBuMA, PCHMA, and PBMA for all of the Ar, H{sub 2}, and N{sub 2} plasmas.

  7. Insight into hydrogenation of graphene: Effect of hydrogen plasma chemistry

    SciTech Connect

    Felten, A.; Nittler, L.; Pireaux, J.-J.; McManus, D.; Rice, C.; Casiraghi, C.

    2014-11-03

    Plasma hydrogenation of graphene has been proposed as a tool to modify the properties of graphene. However, hydrogen plasma is a complex system and controlled hydrogenation of graphene suffers from a lack of understanding of the plasma chemistry. Here, we correlate the modifications induced on monolayer graphene studied by Raman spectroscopy with the hydrogen ions energy distributions obtained by mass spectrometry. We measure the energy distribution of H{sup +}, H{sub 2}{sup +}, and H{sub 3}{sup +} ions for different plasma conditions showing that their energy strongly depends on the sample position, pressure, and plasma power and can reach values as high as 45 eV. Based on these measurements, we speculate that under specific plasma parameters, protons should possess enough energy to penetrate the graphene sheet. Therefore, a graphene membrane could become, under certain conditions, transparent to both protons and electrons.

  8. Angular etching yields of polysilicon and dielectric materials in Cl{sub 2}/Ar and fluorocarbon plasmas

    SciTech Connect

    Yin Yunpeng; Sawin, Herbert H.

    2008-01-15

    The angular etching yields of polysilicon in Cl{sub 2}/Ar plasmas, and dielectric materials (thermal silicon dioxide and low-k dielectric coral) in fluorocarbon plasmas, have been characterized in an inductively coupled plasma beam apparatus. The effects of ion energy, feed gas composition, and plasma source pressure are studied. The experimental results showed that these etching parameters had a significant impact on the resulting angular etching yield curve. In particular, the angular etching yield curve was more sputteringlike at low plasma source pressure and/or low effective gas percentage (Cl{sub 2} and C{sub 4}F{sub 8}), with a peak around 60 deg. -70 deg. off-normal ion incident angle. In contrast, ion-enhanced-etching-like angular curves, which dropped gradually with off-normal angle, were formed at high plasma source pressure and/or high effective gas percentage. Further analysis indicated that the effective neutral-to-ion flux ratio reaching the surface was the primary factor influencing the angular etching yield curve. More specifically, the angular etching yield curve had physical sputtering characteristics at low neutral-to-ion flux ratios; while etching process was really dominated by ion-enhanced etching at high ratios and the angular curve was ion-enhanced-etching-like. The polymer deposition effects are also discussed in this article.

  9. Thermodynamic properties of hydrogen-helium plasmas

    NASA Technical Reports Server (NTRS)

    Nelson, H. F.

    1971-01-01

    The thermodynamic properties of an atomic hydrogen-helium plasma are calculated and tabulated for temperatures from 10,000 to 100,000 K as a function of the mass fraction ratio of atomic hydrogen. The tabulation is for densities from 10 to the minus 10th power to 10 to the minus 6th power gm/cu cm and for hydrogen mass fraction ratios of 0, 0.333, 0.600, 0.800, and 1.0, which correspond to pure helium, 50 percent hydrogen per unit volume, 75 percent hydrogen per unit volume, 89 percent hydrogen per unit volume, and pure hydrogen plasmas, respectively. From an appended computer program, calculations can be made at other densities and mass fractions. The program output agrees well with previous thermodynamic property calculations for limiting cases of pure hydrogen and pure helium plasmas.

  10. Impact of the etching gas on vertically oriented single wall and few walled carbon nanotubes by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gohier, A.; Minea, T. M.; Djouadi, M. A.; Granier, A.

    2007-03-01

    Vertically oriented single wall nanotubes (SWNTs) and few walled nanotubes (FWNTs) have been grown by electronic cyclotron resonance plasma enhanced chemical vapor deposition (PECVD) on silica flat substrates. The impact of the plasma parameters on SWNT and FWNT growth has been investigated using two different etching gas mixtures, namely, C2H2/NH3 and C2H2/H2 with various ratios and applied bias voltages. Kinetic studies are also proposed in order to describe the FWNT growth mechanism by plasma techniques. A key role played by the reactive gas (NH3 and H2) is observed in the PECVD process, contrary to multiwalled nanotube growth. It is demonstrated that the balance between FWNT growth versus FWNT etching can be widely modulated by varying the gas mixture and bias voltage. It is shown that the use of hydrogen for hydrocarbon gas dilution restricts the destruction of SWNT and FWNT by the plasma species (ions and radicals).

  11. Controlled MoS2 layer etching using CF4 plasma

    NASA Astrophysics Data System (ADS)

    Jeon, Min Hwan; Ahn, Chisung; Kim, HyeongU; Kim, Kyong Nam; Zhe LiN, Tai; Qin, Hongyi; Kim, Yeongseok; Lee, Sehan; Kim, Taesung; Yeom, Geun Young

    2015-09-01

    A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS2 layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy showed that one monolayer of MoS2 was etched by exposure to a CF4 plasma for 20 s after an initial incubation time of 20 s, i.e., the number of MoS2 layers could be controlled by exposure to the CF4 plasma for a certain processing time. However, XPS data showed that exposure to CF4 plasma induced a certain amount of damage and contamination by fluorine of the remaining MoS2 surface. After exposure to a H2S plasma for more than 10 min, the damage and fluorine contamination of the etched MoS2 surface could be effectively removed.

  12. III-Nitride Dry Etching - Comparison of Inductively Coupled Plasma Chemistries

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Donovan, S.M.; Hahn, Y-B.; Han, J.; Hays, D.C.; MacKenzie, J.D.; Pearton, S.J.; Shul, R.J.

    1998-11-10

    A systematic study of the etch characteristics of GaN, AlN and InN has been performed with boron halides- (BI{sub 3} and BBr{sub 3}) and interhalogen- (ICl and IBr) based Inductively Coupled Plasmas. Maximum etch selectivities of -100:1 were achieved for InN over both GaN and AlN in the BI{sub 3} mixtures due to the relatively high volatility of the InN etch products and the lower bond strength of InN. Maximum selectivies of- 14 for InN over GaN and >25 for InN over AlN were obtained with ICl and IBr chemistries. The etched surface morphologies of GaN in these four mixtures are similar or better than those of the control sample.

  13. Mechanisms for plasma etching of RRAM SiO2 with diblock copolymer selectivity

    NASA Astrophysics Data System (ADS)

    Ge, Jie; Yang, Yi; Li, Xiao-Ning; Ren, Tianling

    2014-07-01

    To minimize the critical dimension of resistive switching random access memory (RRAM), good anisotropy and selectivity with diblock copolymer are required for silicon dioxide etching. Inductively coupled plasma (ICP) etcher using CHF3/H2 mixture is used for effective etching of SiO2. In this paper, a commercial software CFD-ACE+ was used to simulate reactor scale and feature scale model of SiO2, diblock copolymer and Pt. Etch properties of SiO2 at different chamber conditions were discussed. It was found that etch rate increased at the expense of selectivity as ICP power increased, which was the opposite trend for pressure. Selectivity and anisotropy are achieved at neutral to ion flux ratio 100:1. Moreover, the appropriate overetch time for SiO2 layer to Pt layer was discussed.

  14. Microwave Plasma Hydrogen Recovery System

    NASA Technical Reports Server (NTRS)

    Atwater, James; Wheeler, Richard, Jr.; Dahl, Roger; Hadley, Neal

    2010-01-01

    A microwave plasma reactor was developed for the recovery of hydrogen contained within waste methane produced by Carbon Dioxide Reduction Assembly (CRA), which reclaims oxygen from CO2. Since half of the H2 reductant used by the CRA is lost as CH4, the ability to reclaim this valuable resource will simplify supply logistics for longterm manned missions. Microwave plasmas provide an extreme thermal environment within a very small and precisely controlled region of space, resulting in very high energy densities at low overall power, and thus can drive high-temperature reactions using equipment that is smaller, lighter, and less power-consuming than traditional fixed-bed and fluidized-bed catalytic reactors. The high energy density provides an economical means to conduct endothermic reactions that become thermodynamically favorable only at very high temperatures. Microwave plasma methods were developed for the effective recovery of H2 using two primary reaction schemes: (1) methane pyrolysis to H2 and solid-phase carbon, and (2) methane oligomerization to H2 and acetylene. While the carbon problem is substantially reduced using plasma methods, it is not completely eliminated. For this reason, advanced methods were developed to promote CH4 oligomerization, which recovers a maximum of 75 percent of the H2 content of methane in a single reactor pass, and virtually eliminates the carbon problem. These methods were embodied in a prototype H2 recovery system capable of sustained high-efficiency operation. NASA can incorporate the innovation into flight hardware systems for deployment in support of future long-duration exploration objectives such as a Space Station retrofit, Lunar outpost, Mars transit, or Mars base. The primary application will be for the recovery of hydrogen lost in the Sabatier process for CO2 reduction to produce water in Exploration Life Support systems. Secondarily, this process may also be used in conjunction with a Sabatier reactor employed to

  15. General fabrication of ordered nanocone arrays by one-step selective plasma etching

    NASA Astrophysics Data System (ADS)

    Wang, Qiang; Tian, Zhaoshuo; Li, Yunlong; Tian, Shibing; Li, Yunming; Ren, Shoutian; Gu, Changzhi; Li, Junjie

    2014-03-01

    One-step selective direct current (DC) plasma etching technology is employed to fabricate large-area well-aligned nanocone arrays on various functional materials including semiconductor, insulator and metal. The cones have nanoscale apexes (˜2 nm) with high aspect ratios, which were achieved by a selective plasma etching process using only CH4 and H2 in a bias-assisted hot filament chemical vapor deposition (HFCVD) system without any masked process. The CH_{3}^{+} ions play a major role to etch the roughened surface into a conical structure under the auxiliary of H+ ions. Randomly formed nano-carbon may act as an original mask on the smooth surface to initiate the following selective ions sputtering. Physical impinging of energetic ions onto the concave regions is predominant in comparison with the etching of convex parts on the surface, which is identified as the key mechanism for the formation of conical nanostructures. This one-step maskless plasma etching technology enables the universal formation of uniform nanocone structures on versatile substrates for many promising applications.

  16. Influence of environmental humidity on plasma etching polyamide 6 films

    NASA Astrophysics Data System (ADS)

    Gao, Zhiqiang

    2012-05-01

    The environmental humidity (EH) may have potential influence on atmospheric pressure plasma treatment. In order to investigate how the environmental humidity affects atmospheric pressure plasma treatment, polyamide 6 (PA 6) films were treated by helium/oxygen (He/O2) plasmas using atmospheric pressure plasma jet (APPJ) at different environmental humidity. The plasma treated samples had lower contact angles than the control. Atomic force microscopy (AFM) showed increased surface roughness, while X-ray photoelectron spectroscopy (XPS) revealed increased oxygen contents after the plasma treatments. The plasma treated films had higher T-peel strength than that of the control as revealed by T-peel strength tests. It was shown that the addition of environmental humidity increased effectiveness of the plasma in polymer surface modification after the treatment.

  17. Etching in Chlorine Discharges Using an Integrated Feature Evolution-Plasma Model

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Etching of semiconductor materials is reliant on plasma properties. Quantities such as ion and neutral fluxes, both in magnitude and in direction, are often determined by reactor geometry (height, radius, position of the coils, etc.) In order to obtain accurate etching profiles, one must also model the plasma as a whole to obtain local fluxes and distributions. We have developed a set of three models that simulates C12 plasmas for etching of silicon, ion and neutral trajectories in the plasma, and feature profile evolution. We have found that the location of the peak in the ion densities in the reactor plays a major role in determining etching uniformity across the wafer. For a stove top coil inductively coupled plasma (ICP), the ion density is peaked at the top of the reactor. This leads to nearly uniform neutral and ion fluxes across the wafer. A side coil configuration causes the ion density to peak near the sidewalls. Ion fluxes are thus greater toward the wall's and decrease toward the center. In addition, the ions bombard the wafer at a slight angle. This angle is sufficient to cause slanted profiles, which is highly undesirable.

  18. Investigation of modulated radio frequency plasma etching of GaAs using Langmuir probes

    SciTech Connect

    Law, V.J.; Braithwaite, N.St.J.; Ingram, S.G.

    1994-11-01

    Radio frequency ClCH{sub 3}/H{sub 2} plasma etching of GaAs is examined in the 10-140 mTorr pressure ranging using square-wave modulation of the excitation source to control the etching. A Langmuir probe is used to measure time-resolved electron density, characteristic temperature, and floating potential during the plasma afterglow period. The ClCH{sub 3}/H{sub 2} plasma electron energy is found to be 1.2 {+-} 0.3 eV. The near afterglow plasma density decay has a time constant in the order of {tau}=30 {mu}s at 140 mTorr for 10%-20% ClCh{sub 3} in H{sub 2} and {tau}=100 {mu}s for H{sub 2}. The floating potential continues to decay into the far afterglow, with a characteristic time of the order of milliseconds. The Langmuir probe measurements indicate that the ClCH{sub 3} plasmas the near afterglow is dominated by electron attachment, whereas the far afterglow is dominated by ambipolar diffusion. The GaAs etch rate experiments show that surface reactions continue into the far afterglow, dominating the behavior of the time average etch rate. 11 refs., 5 figs., 1 tab.

  19. Etching Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1983-01-01

    20-page report reviews methods available for etching specific layers on wafers and discusses automation techniques and features on one particular automated system. Compares two major etching methods, chemical (wet) and plasma (dry), and discusses areas in need of development. Methods covered include "dip-and-dunk" manual method of chemical etching, automated chemical etching, and plasma etching.

  20. Measurement of desorbed products during organic polymer thin film etching by plasma beam irradiation

    SciTech Connect

    Kurihara, Kazuaki; Karahashi, Kazuhiro; Egami, Akihiro; Nakamura, Moritaka

    2006-11-15

    The authors investigated the etching characteristics of three kinds of methacrylate polymer films, which have the same main chain but with different side chains, using a plasma beam irradiation apparatus. The polymers are polytbutylmethacrylate, polybenzylmethacrylate, and polycyclohexylmethacrylate. The major desorbed products during nitrogen plasma beam etching were found to be HCN and C{sub 2}N{sub 2} for all methacrylate polymer films. The desorbed products originating from the polymer structure, namely, the main chain and the side chain, were hardly observed. The energy distributions of desorbed products were mainly composed of Maxwell-Boltzmann distribution with a small component of collision cascade distribution for all three polymers and were slightly dependent on the ion energy. It is concluded that chemical sputtering, which can be defined as the production of weakly bound species by ion bombardment, followed by thermal desorption, is the significant ion induced mechanism of organic polymer etching.

  1. Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

    SciTech Connect

    Khare, Rohit; Srivastava, Ashutosh; Donnelly, Vincent M.

    2012-09-15

    The interplay between chlorine inductively coupled plasmas (ICP) and reactor walls coated with silicon etching products has been studied in situ by Auger electron spectroscopy and line-of-sight mass spectrometry using the spinning wall method. A bare silicon wafer mounted on a radio frequency powered electrode (-108 V dc self-bias) was etched in a 13.56 MHz, 400 W ICP. Etching products, along with some oxygen due to erosion of the discharge tube, deposit a Si-oxychloride layer on the plasma reactor walls, including the rotating substrate surface. Without Si-substrate bias, the layer that was previously deposited on the walls with Si-substrate bias reacts with Cl-atoms in the chlorine plasma, forming products that desorb, fragment in the plasma, stick on the spinning wall and sometimes react, and then desorb and are detected by the mass spectrometer. In addition to mass-to-charge (m/e) signals at 63, 98, 133, and 168, corresponding to SiCl{sub x} (x = 1 - 4), many Si-oxychloride fragments with m/e = 107, 177, 196, 212, 231, 247, 275, 291, 294, 307, 329, 345, 361, and 392 were also observed from what appear to be major products desorbing from the spinning wall. It is shown that the evolution of etching products is a complex 'recycling' process in which these species deposit and desorb from the walls many times, and repeatedly fragment in the plasma before being detected by the mass spectrometer. SiCl{sub 3} sticks on the walls and appears to desorb for at least milliseconds after exposure to the chlorine plasma. Notably absent are signals at m/e = 70 and 72, indicating little or no Langmuir-Hinshelwood recombination of Cl on this surface, in contrast to previous studies done in the absence of Si etching.

  2. Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

    SciTech Connect

    Abernathy, C.R.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

    1998-11-04

    Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.

  3. Plasma-surface interactions during Si etching in Cl- and Br-based plasmas: An empirical and atomistic study

    NASA Astrophysics Data System (ADS)

    Tsuda, Hirotaka; Nagaoka, Tatsuya; Miyata, Hiroki; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2009-10-01

    Nanometer-scale control of Si etching in Cl2- and HBr-containing plasmas is indispensable in the fabrication of gate electrodes and shallow trench isolation. There are profile anomalies of sidewalls such as tapering, bowing, footing (or corner rounding), and notching, which largely affect the critical dimension. There are also anomalies of bottom surfaces such as microtrenching and roughness (or residues), which affect the bottom uniformity, and lead to recess and damage in gate fabrication. Atomic-scale cellular model (ASCeM) based on the Monte Carlo method has been developed to simulate plasma-surface interactions and the profile evolution during etching, including passivation layer formation, and also ion reflection and penetration on feature surfaces. We have also studied atomistic plasma-surface interactions by classical molecular dynamics (MD) simulation, where an improved Stillinger-Weber interatomic potential was newly developed. The numerical results were compared with etching experiments and also with surface diagnostics including in-situ Fourier-transform-infrared reflection absorption spectroscopy (FTIR-RAS), to reveal the origin of profile anomalies on feature surfaces during etching, and then to achieve the precise control of etched profiles.

  4. Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms

    SciTech Connect

    Martin, Ryan M.; Blom, Hans-Olof; Chang, Jane P.

    2009-03-15

    The mechanism for ion-enhanced chemical etching of hafnium aluminate thin films in Cl{sub 2}/BCl{sub 3} plasmas was investigated in this work, specifically how the film composition, ion energy, and plasma chemistry determine their etch rates. Several compositions of Hf{sub 1-x}Al{sub x}O{sub y} thin films ranging from pure HfO{sub 2} to pure Al{sub 2}O{sub 3} were etched in BCl{sub 3}/Cl{sub 2} plasmas and their etch rates were found to scale with {radical}(E{sub ion}) in both Cl{sub 2} and BCl{sub 3} plasmas. In Cl{sub 2} plasmas, a transition point was observed around 50 eV, where the etch rate was significantly enhanced while the linear dependence to {radical}(E{sub ion}) was maintained, corresponding to a change in the removal of fully chlorinated to less chlorinated reaction products. In BCl{sub 3} plasma, deposition dominates at ion energies below 50 eV, while etching occurs above that energy with an etch rate of three to seven times that in Cl{sub 2}. The faster etch rate in BCl{sub 3} was attributed to a change in the dominant ion from Cl{sub 2}{sup +} in Cl{sub 2} plasma to BCl{sub 2}{sup +} in BCl{sub 3}, which facilitated the formation of more volatile etch products and their removal. The surface chlorination (0-3 at. %) was enhanced with increasing ion energy while the amount of boron on the surface increases with decreasing ion energy, highlighting the effect of different plasma chemistries on the etch rates, etch product formation, and surface termination.

  5. Plasma chemical modification of track-etched membrane surface layer for improvement of their biomedical properties

    NASA Astrophysics Data System (ADS)

    Kravets, Liubov I.; Ryazantseva, Tatyana V.

    2013-12-01

    The morphological and clinical studies of poly(ethylene terephthalate) track-etched membrane modified by plasma of non-polymerizing gases as drainage materials for antiglaucomatous operations were performed. It was demonstrated their compatibility with eye tissues. Moreover, it was shown that a new drainage has a good lasting hypotensive effect and can be used as operation for refractory glaucoma surgery.

  6. Silicon layer transfer using plasma hydrogenation

    SciTech Connect

    Chen Peng; Lau, S.S.; Chu, Paul K.; Henttinen, K.; Suni, T.; Suni, I.; Theodore, N. David; Alford, T.L.; Mayer, J.W.; Shao Lin; Nastasi, M.

    2005-09-12

    In this work, we demonstrate a novel approach for the transfer of Si layers onto handle wafers, induced by plasma hydrogenation. In the conventional ion-cut process, hydrogen ion implantation is used to initiate layer delamination at a desired depth, which leads to ion damage in the transferred layer. In this study, we investigated the use of plasma hydrogenation to achieve high-quality layer transfer. To place hydrogen atoms introduced during plasma hydrogenation at a specific depth, a uniform trapping layer for H atoms must be prepared in the substrate before hydrogenation. The hydrogenated Si wafer was then bonded to another Si wafer coated with a thermal oxide, followed by thermal annealing to induce Si layer transfer. Cross-section transmission electron microscopy showed that the transferred Si layer was relatively free of lattice damage. The H trapping during plasma hydrogenation, and the subsequent layer delamination mechanism, are discussed. These results show direct evidence of the feasibility of using plasma hydrogenation to transfer relatively defect-free Si layers.

  7. Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications

    NASA Astrophysics Data System (ADS)

    Ekinci, Huseyin; Kuryatkov, Vladimir V.; Mauch, Daniel L.; Dickens, James C.; Nikishin, Sergey A.

    2015-05-01

    Photoconductive semiconductor switches (PCSS) fabricated on high-purity semi-insulating 4H-SiC substrates (000) are capable of switching high currents in compact packages with long device lifetimes. A heavily doped n-type SiC epitaxial layer of appropriate thickness is required to form low-resistance ohmic contacts with these devices. In addition, to enhance the performance of the PCSSs, the SiC surface between the ohmic contacts must be extremely smooth. We report a chlorine-based, inductively coupled plasma reactive ion-etching process yielding n-type SiC epitaxial layers with the required smoothness. The rate of etching and post-etching surface morphology were dependent on plasma conditions. We found that the surface smoothness of epitaxial layers can be improved by including BCl3 in the argon-chlorine mixture. The optimum etching process yielded very smooth surfaces (˜0.3 nm RMS) at a relatively high rate of etching of ˜220 nm/min. This new fabrication approach significantly reduced the on-state resistance of the PCSS device and improved its durability of operation.

  8. Etching of uranium dioxide in nitrogen trifluoride RF plasma glow discharge

    NASA Astrophysics Data System (ADS)

    Veilleux, John Mark

    1999-10-01

    A series of room temperature, low pressure (10.8 to 40 Pa), low power (25 to 210 W) RF plasma glow discharge experiments with UO2 were conducted to demonstrate that plasma treatment is a viable method for decontaminating UO2 from stainless steel substrates. Experiments were conducted using NF3 gas to decontaminate depleted uranium dioxide from stainless-steel substrates. Results demonstrated that UO2 can be completely removed from stainless-steel substrates after several minutes processing at under 200 W. At 180 W and 32.7 Pa gas pressure, over 99% of all UO2 in the samples was removed in just 17 minutes. The initial etch rate in the experiments ranged from 0.2 to 7.4 mum/min. Etching increased with the plasma absorbed power and feed gas pressure in the range of 10.8 to 40 Pa. A different pressure effect on UO2 etching was also noted below 50 W in which etching increased up to a maximum pressure, ˜23 Pa, then decreased with further increases in pressure. A computer simulation, CHEMKIN, was applied to predict the NF3 plasma species in the experiments. The code was validated first by comparing its predictions of the NF3 plasma species with mass spectroscopy etching experiments of silicon. The code predictions were within +/-5% of the measured species concentrations. The F atom radicals were identified as the primary etchant species, diffusing from the bulk plasma to the UO2 surface and reacting to form a volatile UF6, which desorbed into the gas phase to be pumped away. Ions created in the plasma were too low in concentration to have a major effect on etching, but can enhance the etch rate by removing non-volatile reaction products blocking the reaction of F with UO2. The composition of these non-volatile products were determined based on thermodynamic analysis and the electronic structure of uranium. Analysis identified possible non-volatile products as the uranium fluorides, UF2-5, and certain uranium oxyfluorides UO2F, UO2F2, UOF3, and UOF 4 which form over the

  9. High-speed anisotropic etching of quartz using SF 6/C 4F 8/Ar/O II based chemistry in inductively coupled plasma reactive ion etching system

    NASA Astrophysics Data System (ADS)

    Goyal, Abhijat; Hood, Vincent; Tadigadapa, Srinivas

    2006-01-01

    Etching of quartz and glass for microsystems applications requires optimization of the etch process for high etch rates, high aspect ratios and low rms surface roughness of the etched features. Typically, minimum surface roughness of the etched feature accompanied with maximum etch rate and anisotropy are desired. In this article, we investigate the effect of different gas chemistries on the etch rate and rms surface roughness of the Pyrex(R) 7740 in an inductively coupled plasma reactive ion etching (ICP-RIE) system. The gases considered were SF6 and c-C4F8, with additives gases comprising of O2, Ar, and CH4. A standard factorial design of experiment (DOE) methodology was used for finding the effect of variation of process parameters on the etch rate and rms surface roughness. By use of 2000 W of ICP power, 475 W of substrate power, SF6 flow rate of 5 sccm, Ar flow rate of 50 sccm, substrate holder temperature of 20°C, and distance of substrate holder from ICP source to be 120 mm, we were able to obtain an etch rate of 0.536 μm/min and a rms surface roughness of ~1.97 nm. For an etch process optimized for high etch rate and minimum surface roughness using C4F8/SF6/O2/Ar gases, an etch rate of 0.55 μm/min and a rms surface roughness of ~25 nm was obtained for SF6 flow rate of 5 sccm, C4F8 flow rate of 5 sccm, O2 flow rate of 50 sccm, Ar flow rate of 50 sccm. Keeping all other process parameters the same, increasing the SF6 flow rate to 50 sccm resulted in an etch rate of 0.7 μm/min at an rms surface roughness of ~800 nm whereas increasing the C4F8 flow rate to 50 sccm resulted in an etch rate of 0.67 μm/min at an rms surface roughness of ~450 nm . Addition of CH4 did not contribute significantly to the etch rate while at the same time causing significant increase in the rms surface roughness. Regression or least square fit was used define an arbitrary etch rate number (Wetch) and rms surface roughness number (Wrms). These numbers were calculated by least

  10. Controlling the relative rates of adlayer formation and removal during etching in inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Fuller, Nicholas Colvin Masi

    Laser desorption (LD) of the adlayer coupled with laser induced fluorescence (LIF) and plasma induced emission (PIE) of desorbed adsorbates is used to investigate the relative rates of chlorination and sputtering during the etching of Si in inductively coupled Cl2-Ar plasmas. Such an analysis is a two-fold process: surface analysis and plasma characterization. Surface analysis of Si etching using LD-LIF and LD-PIE techniques combined with etch rate measurements have revealed that the coverage of SiCl2 and etch rate increases and coverage of Si decreases abruptly for a chlorine fraction of 75% and ion energy of 80 eV. The precise Cl2 fraction for which these abrupt changes occur increases with an increase in ion energy. These changes may be caused by local chemisorption-induced reconstruction of Si <100>. Furthermore, the chlorination and sputtering rates are increased by ˜ an order of magnitude as the plasma is changed from Ar-dominant to Cl-dominant. Characterization of the plasma included determination of the dominant ion in Cl2 plasmas using LIF and a Langmuir probe and measurement of the absolute densities of Cl2, Cl, Cl+, and At + in Cl2-Ar discharges using optical emission actinometry. These studies reveal that Cl+ is the dominant positive ion in the H-mode and the dissociation of Cl2 to Cl increases with an increase in Ar fraction due to an increase in electron temperature. Furthermore, for powers exceeding 600 W, the neutral to ion flux ratio is strongly dependent on Cl2 fraction and is attributed mostly to the decrease in Cl density. Such dependence of the flux ratio on Cl2 fraction is significant in controlling chlorination and sputtering rates not only for Si etching, but for etching other key technological materials. ICP O2 discharges were also studied for low-kappa polymeric etch applications. These studies reveal that the electron temperature is weakly dependent on rf power and O2 dissociation is low (˜2%) at the maximum rf power density of 5.7 Wcm

  11. Parametric study of compound semiconductor etching utilizing inductively coupled plasma source

    SciTech Connect

    Constantine, C.; Johnson, D.; Barratt, C.

    1996-07-01

    Inductively Coupled Plasma (ICP) sources are extremely promising for large-area, high-ion density etching or deposition processes. In this review the authors compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same single-wafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.

  12. High-transmittance surface textures formed by plasma etching of metallophthalocyanine films

    SciTech Connect

    Sakata, Hajime

    2001-06-15

    The effect of rf-induced plasma etching on thermally evaporated metallophthalocyanine films is investigated. Etching by a gas mixture of nitrogen and CF{sub 4} results in a transparent microstructuring residue with a grain size in the 100 nm range. The residue-covered surface increases visible transmittance up to 3%{endash}4% over the glass substrate. The high-transmittance effect, which is nearly insensitive to wavelength, is characterized by modeling a gradient refractive-index profile bounded on discrete interfaces with surrounding media. {copyright} 2001 American Institute of Physics.

  13. Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

    PubMed Central

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time. Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  14. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants.

    PubMed

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation.The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  15. Experimental investigation of a hydrogen plasma railgun

    SciTech Connect

    Harden, B.; Howell, J.R. . Center for Energy Studies)

    1991-10-01

    This paper reports that the plasma velocity and temperature and composition distributions in a hydrogen plasma railgun were measured. Typical velocities near the muzzle were {approximately}95 km/s at an initial capacitor bank stored energy of 4.1 kJ. Temperatures ranged from a peak of {approximately}24000 K in the current-carrying plasma, to {approximately}85000 K in the tail. The current-carrying plasma was composed of roughly equal parts of hydrogen and copper. Also, computer modeling of armature B-dot probe signals has yielded a simple interpretation of the signal.

  16. Etching of UO{sub 2} in NF{sub 3} RF Plasma Glow Discharge

    SciTech Connect

    John M. Veilleux

    1999-08-01

    A series of room temperature, low pressure (10.8 to 40 Pa), low power (25 to 210 W) RF plasma glow discharge experiments with UO{sub 2} were conducted to demonstrate that plasma treatment is a viable method for decontaminating UO{sub 2} from stainless steel substrates. Experiments were conducted using NF{sub 3} gas to decontaminate depleted uranium dioxide from stainless-steel substrates. Depleted UO{sub 2} samples each containing 129.4 Bq were prepared from 100 microliter solutions of uranyl nitrate hexahydrate solution. The amorphous UO{sub 2} in the samples had a relatively low density of 4.8 gm/cm{sub 3}. Counting of the depleted UO{sub 2} on the substrate following plasma immersion was performed using liquid scintillation counting with alpha/beta discrimination due to the presence of confounding beta emitting daughter products, {sup 234}Th and {sup 234}Pa. The alpha emission peak from each sample was integrated using a gaussian and first order polynomial fit to improve quantification. The uncertainties in the experimental measurement of the etched material were estimated at about {+-} 2%. Results demonstrated that UO{sub 2} can be completely removed from stainless-steel substrates after several minutes processing at under 200 W. At 180 W and 32.7 Pa gas pressure, over 99% of all UO{sub 2} in the samples was removed in just 17 minutes. The initial etch rate in the experiments ranged from 0.2 to 7.4 {micro}m/min. Etching increased with the plasma absorbed power and feed gas pressure in the range of 10.8 to 40 Pa. A different pressure effect on UO{sub 2} etching was also noted below 50 W in which etching increased up to a maximum pressure, {approximately}23 Pa, then decreased with further increases in pressure.

  17. In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors

    SciTech Connect

    Belen, Rodolfo Jun; Gomez, Sergi; Kiehlbauch, Mark; Aydil, Eray S.

    2006-11-15

    The authors propose and demonstrate a technique to determine the ion incidence angle dependence of the ion-enhanced etching yield under realistic plasma conditions and in situ in an arbitrary plasma reactor. The technique is based on measuring the etch rate as a function of position along the walls of features that initially have nearly semicircular cross sections. These initial feature shapes can be easily obtained by wet or isotropic plasma etching of holes patterned through a mask. The etch rate as a function of distance along the feature profile provides the etching yield as a function of the ion incidence angle. The etch rates are measured by comparing digitized scanning electron micrograph cross sections of the features before and after plasma etching in gas mixtures of interest. The authors have applied this technique to measure the ion incidence angle dependence of the Si etching yield in HBr, Cl{sub 2}, SF{sub 6}, and NF{sub 3} plasmas and binary mixtures of SF{sub 6} and NF{sub 3} with O{sub 2}. Advantages and limitations of this method are also discussed.

  18. Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

    NASA Astrophysics Data System (ADS)

    Hübner, M.; Lang, N.; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.; Röpcke, J.; van Helden, J. H.

    2015-01-01

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF2 radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF2 radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm-1. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν3 fundamental band of CF2 with the aid of an improved simulation of the line strengths. We found that the CF2 radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  19. Investigation of Asymmetries in Inductively Coupled Plasma Etching Reactors Using a 3-Dimensional Hybrid Model

    NASA Astrophysics Data System (ADS)

    Kushner, Mark J.; Grapperhaus, Michael J.

    1996-10-01

    Inductively Coupled Plasma (ICP) reactors have the potential for scaling to large area substrates while maintaining azimuthal symmetry or side-to-side uniformity across the wafer. Asymmetric etch properties in these devices have been attributed to transmission line properties of the coil, internal structures (such as wafer clamps) and non-uniform gas injection or pumping. To investigate the origins of asymmetric etch properties, a 3-dimensional hybrid model has been developed. The hybrid model contains electromagnetic, electric circuit, electron energy equation, and fluid modules. Continuity and momentum equations are solved in the fluid module along with Poisson's equation. We will discuss results for ion and radical flux uniformity to the substrate while varying the transmission line characteristics of the coil, symmetry of gas inlets/pumping, and internal structures. Comparisons will be made to expermental measurements of etch rates. ^*Work supported by SRC, NSF, ARPA/AFOSR and LAM Research.

  20. Plasma heating power dissipation in low temperature hydrogen plasmas

    SciTech Connect

    Komppula, J. Tarvainen, O.

    2015-10-15

    A theoretical framework for power dissipation in low temperature plasmas in corona equilibrium is developed. The framework is based on fundamental conservation laws and reaction cross sections and is only weakly sensitive to plasma parameters, e.g., electron temperature and density. The theory is applied to low temperature atomic and molecular hydrogen laboratory plasmas for which the plasma heating power dissipation to photon emission, ionization, and chemical potential is calculated. The calculated photon emission is compared to recent experimental results.

  1. Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-05-01

    Classical molecular dynamics (MD) simulations have been performed for SiClx+ (x = 0-4) ions incident on Si(100) surfaces, using an improved Stillinger-Weber (SW) potential form, to understand the surface reaction kinetics of etch byproduct ion incidence during Si etching in Cl-based plasmas. The ions were normally incident on surfaces with translational energies in the range of Ei = 20-500 eV, and the surface reaction kinetics of Clx+ (x = 1, 2) ion incidence were also simulated for reference. The etch yields and thresholds presently simulated were in agreement with the experimental results previously reported for the respective ion beam incidences on Si. Numerical results indicated that the etch yields y* per halogen (or per constituent Cl atom of incident ions), thresholds, surface coverages of Cl atoms adsorbed, and thicknesses of chlorinated surface layers are almost the same, when compared at the same translational energy e_{\\text{i}}^{*} per halogen; moreover, the stoichiometries of product species desorbed, stoichiometries of chlorinated surface layers, and their depth profiles are also similar when compared at the same e_{\\text{i}}^{*}. Thus, it follows that the etching characteristics for SiClx+ as well as Clx+ incidences on Si are determined primarily or scaled universally by e_{\\text{i}}^{*}, unless the deposition is significant at low Ei or e_{\\text{i}}^{*} for SiCl+ and SiCl2+.

  2. Atomic-layer soft plasma etching of MoS2.

    PubMed

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya Ken

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

  3. Atomic-layer soft plasma etching of MoS2

    PubMed Central

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

  4. Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.; Ranade, R.

    2002-01-01

    Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

  5. Atomic-layer soft plasma etching of MoS2

    NASA Astrophysics Data System (ADS)

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.

  6. Plasma etch patterning of EUV lithography: balancing roughness and selectivity trade off

    NASA Astrophysics Data System (ADS)

    Rastogi, Vinayak; Beique, Genevieve; Sun, Lei; Cottle, Hongyun; Feurprier, Yannick; Metz, Andrew; Kumar, Kaushik; Labelle, Cathy; Arnold, John; Colburn, Matthew; Ranjan, Alok

    2016-03-01

    EUV based patterning is one of the frontrunner candidates enabling scaling for future technology nodes. However it poses the common challenges of `pattern roughness' and `etch resistance' aspect which are getting even more critical as we work on smaller dimension features. Continuous efforts are ongoing to improve resist materials and lithography process but the industry is slowly moving to introduce it at high volume manufacturing. Plasma Etch processes have the potential to improvise upon the incoming pattern roughness and provide improved LER/LWR downstream to expedite EUV progress. In this work we demonstrate the specific role of passivation control in the dualfrequency Capacitively Coupled Plasma (CCP) for EUV patterning process with regards to improving LER/LWR, resist selectivity and CD tunability for line/space patterns. We draw the implicit commonalities between different passivation chemistry and their effectiveness for roughness improvement. The effect of relative C:F and C:H ratio in feed gas on CFx and CHx plasma species and in turn the evolution of pattern roughness is drawn. Data that shows the role of plasma etch parameters impacting the key patterning metrics of CD, resist selectivity and LER/LWR is presented.

  7. Plasma-induced-damage of GaAs during etching of refractory metal contacts

    SciTech Connect

    Shul, R.J.; Lovejoy, M.L.; Baca, A.G.; Zolper, J.C.; Rieger, D.J.; Hafich, M.J.; Corless, R.F.; Vartuli, C.R.

    1994-10-01

    The effect of plasma-induced-damage on the majority carrier transport properties of GaAs has been studied by monitoring changes in sheet resistance (R{sub s}) of thin conducting layers under various plasma conditions including etch conditions for refractory metal contacts. R{sub s} determined from transmission line measurements are used to evaluate plasma-induced-damage for electron cyclotron resonance (ECR) and reactive ion etch (RIE) conditions by varying the thickness of doped epitaxial layers. The authors speculate that plasma-induced-damage in the near surface region plays a major role in explaining the damage mechanism observed in this study. Very consistent trends have been observed where R{sub s} increases with increasing ECR and RIE dc-bias, increasing microwave power, and decreasing pressure, thus showing R{sub s} increases as either the ion energy or ion flux increases. The authors have also observed that R{sub s} is lower for samples exposed to the RIE than the ECR, possibly due to higher ion and electron densities generated in the ECR and higher pressures in the RIE. It has also been observed R{sub s} dependence on ECR plasma chemistry where, R{sub s} is lower in SF{sub 6}/Ar plasmas than Ar and N{sub 2} plasmas possibly related to interactions of F or S atoms with the GaAs surface. Moderate anneal temperatures (200 to 500{degrees}C) have shown significant R{sub s} recovery.

  8. High density plasma etching of ultrananocrystalline diamond films in O2/CF4 and O2/SF6 inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Park, Jong Cheon; Kim, Seong Hak; Kim, Tae Gyu; Kim, Jin Kon; Cho, Hyun; Lee, Byeong Woo

    2015-03-01

    Inductively coupled plasma etching of ultrananocrystalline diamond (UNCD) films was performed in O2/CF4 and O2/SF6 discharges. Higher etch rates were produced for the O2/SF6 discharges and the films etched in the 10O2/5CF4 discharges retained smooth surface morphology similar to the unetched control sample. Al mask showed a good etch selectivity to the UNCD for both plasma chemistries and highly anisotropic pattern transfer with a vertical sidewall profile was achieved.

  9. Thermodynamic properties of hydrogen-helium plasmas.

    NASA Technical Reports Server (NTRS)

    Nelson, H. F.

    1972-01-01

    Calculation of the thermodynamic properties of an atomic hydrogen-helium plasma for postulated conditions present in a stagnation shock layer of a spacecraft entering the atmosphere of Jupiter. These properties can be used to evaluate transport properties, to calculate convective heating, and to investigate nonequilibrium behavior. The calculations have been made for temperatures from 10,000 to 100,000 K, densities of 10 to the minus 7th and .00001 g cu cm, and three plasma compositions: pure hydrogen, 50% hydrogen/50% helium, and pure helium. The shock layer plasma consists of electrons, protons, atomic hydrogen, atomic helium, singly ionized helium, and doubly atomized helium. The thermodynamic properties which have been investigated are: pressure, average molecular weight, internal energy, enthalpy, entropy, specific heat, and isentropic speed of sound. A consistent model was used for the reduction of the ionization potential in the calculation of the partition functions.

  10. Optical emission spectroscopy analysis for Ge2Sb2Te5 etching endpoint detection in HBr/He plasma

    NASA Astrophysics Data System (ADS)

    Li, Juntao; Liu, Bo; Song, Zhitang; Feng, Gaoming; Wu, Guanping; He, Aodong; Yang, Zuoya; Zhu, Nanfei; Xu, Jia; Ren, Jiadong; Feng, Songlin

    In the fabrication of phase change memory devices, HBr/He gas is employed in patterning Ge2Sb2Te5 (GST) because it is damage free to GST sidewall. Accurate and reproducible endpoint detection methods are necessary in this etching process. In-situ optical emission spectroscopy (OES) is collected and analyzed to control the GST etching process due to its non-invasiveness. By analyzing the light emitted from plasma, we report an effective etch endpoint detection method for GST etching process is developed and the results are also confirmed using scanning electron micrographs.

  11. Electron-beam-assisted dry etching for GaAs using electron cyclotron resonance plasma electron source

    NASA Astrophysics Data System (ADS)

    Watanabe, Heiji; Matsui, Shinji

    1992-12-01

    Electron-beam (EB)-assisted dry etching of GaAs using Ar electron cyclotron resonance (ECR) plasma as an electron shower source is developed to achieve a low energy and high current density electron beam (EB). The rate of EB-assisted dry etching is more than ten times larger than for Cl2 gas etching.It is confirmed, through photoluminescence measurement, that this etching method causes less damage than ion beam techniques and is very effective for damaged layer removal. Using this technique, a 0.4 μm linewidth low-damage fine structure of GaAs was fabricated.

  12. Patterning of titanium oxide nanostructures by electron-beam lithography combined with plasma etching

    NASA Astrophysics Data System (ADS)

    Hotovy, I.; Kostic, I.; Nemec, P.; Predanocy, M.; Rehacek, V.

    2015-07-01

    Patterning of metal oxide nanostructures with precisely controlled geometries and spacings can play an important role in the improvement of sensors for gas detection. Titanium oxide thin films were deposited on oxidized silicon substrates by reactive magnetron sputtering at room temperature. Patterning of TiO2 nanostructures was conducted by electron beam lithography combined with plasma etching. It was found that for 120 nm-thick TiO2 nanostructure formation, HSQ e-beam resists and Cr films prove to be suitable mask materials. Experimental results showed that the size of TiO2 nanostructures depends mainly on the e-beam lithography process and they can be controlled by the design geometry and the exposure dose. TiO2 nanostructures with a minimal diameter of 70 nm and spacing of 200 nm were successfully fabricated by ICP etching in CF4/Ar plasma through negative e-beam resist HSQ.

  13. Effects of oxygen plasma etching on Sb2Te3 explored by torque detected quantum oscillations

    NASA Astrophysics Data System (ADS)

    Yan, Yuan; Heintze, Eric; Pracht, Uwe S.; Blankenhorn, Marian; Dressel, Martin

    2016-04-01

    De Haas-van Alphen measurements evidence that oxygen plasma etching strongly affects the properties of the three-dimensional topological insulator Sb2Te3. The quantum oscillations in magnetization down to low temperature (T ≥ 2 K) and high magnetic field (B ≤ 7 T) have been systematically investigated using a high-sensitive cantilever torque magnetometer. The effective mass and the oscillation frequency obtained from de Haas-van Alphen measurements first increase and then decrease as the oxygen plasma etching time increases from 0 to 12 min, corresponding to an up- and down-shift of the Dirac point. We establish the cantilever torque magnetometer as a powerful contactless tool to investigate the oxygen sensitivity of the surface state in topological insulators.

  14. The effects of polymer side-chain structure on roughness formation of ArF photoresist in plasma etching processes

    NASA Astrophysics Data System (ADS)

    Uesugi, Takuji; Okada, Takeru; Wada, Akira; Kato, Keisuke; Yasuda, Atsushi; Maeda, Shinichi; Samukawa, Seiji

    2012-02-01

    Low etching resistance and roughness formation of ArF photoresist during plasma etching are serious problems. We have previously found that decisive factors affecting the plasma resistance and roughness formation in an ArF photoresist are determined by ultraviolet/vacuum ultraviolet radiation and roughness formation is dominated by chemical reactions. In this paper, on the basis of our previous findings on the interaction between radiation species from plasma and ArF photoresist polymers, we investigated the polymer structural dependence for the degradation mechanism of ArF photoresist in the plasma etching processes. The etching resistance of ArF photoresist was improved by controlling the elemental ratio of oxygen atoms and ring structures in photoresist polymer. Furthermore, lactone C=O bond is found to be a key factor for roughness formation during the etching process. We have revealed the importance of the molecular structure of ArF photoresist for improving the surface roughness and etching resistance during the plasma etching process.

  15. Experimental investigation of hydrogen peroxide RF plasmas

    NASA Astrophysics Data System (ADS)

    Barni, R.; Decina, A.; Zanini, S.; D'Orazio, A.; Riccardi, C.

    2016-04-01

    This work reports a detailed experimental study of the plasma properties in low pressure RF discharges in hydrogen peroxide and a comparison with argon under the same operating conditions. H2O2 plasmas have been proposed for sterilization purposes. Electrical properties of the discharge were shown to be similar, as for the RF and DC voltages of the driving electrode. Bulk plasma volume remains stable, concentrated in an almost cylindrical region between the two facing electrodes. It was found that the electron temperature is almost uniform across the plasma and independent of the power level. This is higher than in argon discharges: T e  =  4.6  ±  0.9 eV versus T e  =  3.3  ±  1.1 eV. The plasma density increases almost linearly with the power level and a substantial negative ion component has been ruled out in hydrogen peroxide. Dissociation in the plasma gas phase was revealed by atomic hydrogen and hydroxyl radical emission in the discharge spectra. Emission from hydroxyl and atomic oxygen demonstrates that oxidizing radicals are produced by hydrogen peroxide discharges, revealing its usefulness for plasma processing other than sterilization, for instance to increase polymer film surface energy. On the other hand, argon could be considered as a candidate for the sterilization purposes due to the intense production of UV radiation.

  16. Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching

    SciTech Connect

    Kokkoris, George; Boudouvis, Andreas G.; Gogolides, Evangelos

    2006-11-15

    An integrated framework for the neutral flux calculation inside trenches and holes during plasma etching is described, and a comparison between the two types of structure in a number of applications is presented. First, a detailed and functional set of equations for the neutral and ion flux calculations inside long trenches and holes with cylindrical symmetry is explicitly formulated. This set is based on early works [T. S. Cale and G. B. Raupp, J. Vac. Sci. Technol. B 8, 1242 (1990); V. K. Singh et al., J. Vac. Sci. Technol. B 10, 1091 (1992)], and includes new equations for the case of holes with cylindrical symmetry. Second, a method for the solution of the respective numerical task, i.e., one or a set of linear or nonlinear integral equations, is described. This method includes a coupling algorithm with a surface chemistry model and resolves the singularity problem of the integral equations. Third, the fluxes inside trenches and holes are compared. The flux from reemission is the major portion of the local flux at the bottom of both types of structure. The framework is applied in SiO{sub 2} etching by fluorocarbon plasmas to predict the increased intensity of reactive ion etching lag in SiO{sub 2} holes compared to trenches. It is also applied in deep Si etching: By calculating the flux of F atoms at the bottom of very high aspect ratio (up to 150) Si trenches and holes during the gas chopping process, the aspect ratio at which the flux of F atoms is eliminated and etching practically stops is estimated.

  17. Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    Gray, David C.

    1992-01-01

    A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14

  18. Hydrogen ionic plasma generated using Al plasma grid

    NASA Astrophysics Data System (ADS)

    Oohara, W.; Anegawa, N.; Egawa, M.; Kawata, K.; Kamikawa, T.

    2016-08-01

    Negative hydrogen ions are produced in the apertures of a plasma grid made of aluminum under the irradiation of positive ions, generating an ionic plasma consisting of positive and negative ions. The saturation current ratio obtained using a Langmuir probe reflects the existence ratio of electrons and is found to increase in connection with the diffusion of the ionic plasma. The local increment of the current ratio suggests the collapse of negative ions and the replacement of detached electrons.

  19. Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

    SciTech Connect

    Hirota, Kosa Itabashi, Naoshi; Tanaka, Junichi

    2014-11-01

    The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaning method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.

  20. 200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching

    SciTech Connect

    Kubota, Tomohiro; Nukaga, Osamu; Ueki, Shinji; Sugiyama, Masakazu; Inamoto, Yoshimasa; Ohtake, Hiroto; Samukawa, Seiji

    2010-09-15

    The authors developed a neutral beam source consisting of a 200-mm-diameter inductively coupled plasma etcher and a graphite neutralization aperture plate based on the design of a neutral beam source that Samukawa et al. [Jpn. J. Appl. Phys., Part 2 40, L779 (2001)] developed. They measured flux and energy of neutral particles, ions, and photons using a silicon wafer with a thermocouple and a Faraday cup and calculated the neutralization efficiency. An Ar neutral beam flux of more than 1 mA/cm{sup 2} in equivalent current density and a neutralization efficiency of more than 99% were obtained. The spatial uniformity of the neutral beam flux was within {+-}6% within a 100 mm diameter. Silicon etching using a F{sub 2}-based neutral beam was done at an etch rate of about 47 nm/min, while Cl{sub 2}-based neutral beam realized completely no undercut. The uniformity of etch rate was less than {+-}5% within the area. The etch rate increased by applying bias power to the neutralization aperture plate, which shows that accelerated neutral beam was successfully obtained. These results indicate that the neutral beam source is scalable, making it possible to obtain a large-diameter and uniform neutral beam, which is inevitable for application to mass production.

  1. Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

    SciTech Connect

    Jinnai, Butsurin; Koyama, Koji; Kato, Keisuke; Yasuda, Atsushi; Momose, Hikaru; Samukawa, Seiji

    2009-03-01

    ArF excimer laser lithography was introduced to fabricate nanometer-scale devices and uses chemically amplified photoresist polymers including photoacid generators (PAGs). Because plasma-etching processes cause serious problems related to the use of ArF photoresists, such as line-edge roughness and low etching selectivity, we have to understand the interaction between plasma and ArF photoresist polymers. Investigating the effects of surface temperature and the irradiation species from plasma, we have found that ion irradiation by itself did not drastically increase the roughness or etching rate of ArF photoresist films unless it was combined with ultraviolet/vacuum ultraviolet (UV/VUV) photon irradiation. The structures of ArF photoresist polymers were largely unchanged by ion irradiation alone but were destroyed by combinations of ion and UV/VUV-photon irradiation. Our results suggested that PAG-mediated deprotection induced by UV/VUV-photon irradiation was amplified at surface temperatures above 100 deg. C. The etching rate and surface roughness of plasma-etched ArF photoresists are affected by the irradiation species and surface temperature during plasma etching. UV/VUV-photon irradiation plays a particularly important role in the interaction between plasma and ArF photoresist polymers.

  2. Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

    SciTech Connect

    Shin, Hyungjoo; Zhu Weiye; Liu Lei; Sridhar, Shyam; Donnelly, Vincent M.; Economou, Demetre J.; Lenox, Chet; Lii, Tom

    2013-05-15

    Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaN etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.

  3. Fiber optic hydrogen sensor based on an etched Bragg grating coated with palladium.

    PubMed

    Coelho, L; de Almeida, J M M M; Santos, J L; Viegas, D

    2015-12-10

    A study of a sensor for hydrogen (H2) detection based on fiber Bragg gratings coated with palladium (Pd) with self-temperature compensation is presented. The cladding around the gratings was reduced down to 50 μm diameter by a chemical etching process. One of the gratings was left uncoated, and the other was coated with 150 nm of Pd. It was observed that palladium hydride has unstable behavior in environments with high humidity level. A simple solution to overcome this problem based on a Teflon tape is presented. The sensing device studied was able to respond to H2 concentrations in the range 0%-1% v/v at room temperature and atmospheric pressure, achieving sensitivities larger than 20 pm/% v/v. Considering H2 concentrations in nitrogen up to 1%, the performance of the sensing head was characterized for different thicknesses of Pd coating ranging from 50 to 200 nm. PMID:26836856

  4. Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Kumar, Kaushik

    2013-09-01

    For multiple generations of semiconductor technologies, RF plasmas have provided a reliable platform for critical and non-critical patterning applications. The electron temperature of processes in a RF plasma is typically several electron volts. A substantial portion of the electron population is within the energy range accessible for different types of electron collision processes, such as electron collision dissociation and dissociative electron attachment. When these electron processes occur within a small distance above the wafer, the neutral species, radicals and excited molecules, generated from these processes take part in etching reactions impacting selectivity, ARDE and micro-loading. The introduction of finFET devices at 22 nm technology node at Intel marks the transition of planar devices to 3-dimensional devices, which add to the challenges to etch process in fabricating such devices. In the sub-32 nm technology node, Back-end-of-the-line made a change with the implementation of Trench First Metal Hard Mask (TFMHM) integration scheme, which has hence gained traction and become the preferred integration of low-k materials for BEOL. This integration scheme also enables Self-Aligned Via (SAV) patterning which prevents via CD growth and confines via by line trenches to better control via to line spacing. In addition to this, lack of scaling of 193 nm Lithography and non-availability of EUV based lithography beyond concept, has placed focus on novel multiple patterning schemes. This added complexity has resulted in multiple etch schemes to enable technology scaling below 80 nm Pitches, as shown by the memory manufacturers. Double-Patterning and Quad-Patterning have become increasingly used techniques to achieve 64 nm, 56 nm and 45 nm Pitch technologies in Back-end-of-the-line. Challenges associated in the plasma etching of these multiple integration schemes will be discussed in the presentation. In collaboration with A. Ranjan, TEL Technology Center, America

  5. Restructured graphene sheets embedded carbon film by oxygen plasma etching and its tribological properties

    NASA Astrophysics Data System (ADS)

    Guo, Meiling; Diao, Dongfeng; Yang, Lei; Fan, Xue

    2015-12-01

    An oxygen plasma etching technique was introduced for improving the tribological properties of the graphene sheets embedded carbon (GSEC) film in electron cyclotron resonance plasma processing system. The nanostructural changing in the film caused by oxygen plasma etching was examined by transmission electron microscope, Raman spectroscopy and X-ray photoelectron spectroscopy, showing that the 3 nm thick top surface layer was restructured with smaller graphene nanocrystallite size as well as higher sp3 bond fraction. The surface roughness, mechanical behavior and tribological properties of the original GSEC and oxygen plasma treated GSEC films were compared. The results indicated that after the oxygen plasma treatment, the average roughness decreased from 20.8 ± 1.1 nm to 1.9 ± 0.1 nm, the hardness increased from 2.3 ± 0.1 GPa to 2.9 ± 0.1 GPa, the nanoscratch depth decreased from 64.5 ± 5.4 nm to 9.9 ± 0.9 nm, and the wear life increased from 930 ± 390 cycles to more than 15,000 frictional cycles. The origin of the improved tribological behavior was ascribed to the 3 nm thick graphene nanocrystallite film. This finding can be expected for wide applications in nanoscale surface engineering.

  6. Absolute radical densities in etching plasmas determined by broad-band UV absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul; Cunge, Gilles; Neuilly, François; Sadeghi, Nader

    1998-08-01

    Broad-band UV absorption spectroscopy was used to determine radical densities in reactive gas plasmas generated in a 13.56 MHz capacitively coupled parallel plate reactor. Five radical species were detected: 0963-0252/7/3/021/img1, CF, AlF, 0963-0252/7/3/021/img2 and 0963-0252/7/3/021/img3. Absolute (line-integrated) 0963-0252/7/3/021/img1 densities were determined in 0963-0252/7/3/021/img5 and 0963-0252/7/3/021/img6 plasmas, as were the 0963-0252/7/3/021/img1 vibrational and rotational temperatures in the latter case. In 0963-0252/7/3/021/img5 plasmas the CF radical was also detected, along with the etch products AlF (from the Al powered electrode) and 0963-0252/7/3/021/img2 (when an Si substrate was present). The fraction that 0963-0252/7/3/021/img2 comprises of the total etch products was estimated. Finally, the 0963-0252/7/3/021/img3 dimer was detected in an 0963-0252/7/3/021/img12 plasma in the presence of an Si substrate. This simple technique allows absolute concentrations of many key reactive species to be determined in reactive plasmas, without the need to analyse the complex rotational spectra of these polyatomic molecules.

  7. Novel ArF photoresist polymer to suppress the roughness formation in plasma etching processes

    NASA Astrophysics Data System (ADS)

    Kato, Keisuke; Yasuda, Atsushi; Maeda, Shin-ichi; Uesugi, Takuji; Okada, Takeru; Wada, Akira; Samukawa, Seiji

    2013-03-01

    The serious problem associated with 193-nm lithography using an ArF photoresist is roughness formation of photoresist polymer during plasma processes. We have previously investigated the mechanism of roughness formation caused by plasma. The main deciding factor for roughness formation is a chemical reaction between photoresist polymer and reactive species from plasma. The lactone group in photoresist polymer is highly chemically reactive, and shrinking the lactone structure enhances the roughness formation. In this paper, on the basis of the mechanism of roughness formation, we propose a novel ArF photoresist polymer. The roughness formation was much more suppressed in the novel photoresist polymer during plasma etching process than in the previous type. In the novel photoresist polymer, chemical reactions were spread evenly on the photoresist film surface by adding the polar structure. As a result, decreases in the lactone group were inhibited, leading to suppressing ArF photoresist roughness.

  8. Effect of damage removal etch (DRE) on plasma textured, multi-crystalline solar cells

    NASA Astrophysics Data System (ADS)

    Majumdar, S.; Pathak, M.; Chahar, N.; Sharan, A.; Saxena, A. K.; Bhattacharya, S.

    2014-10-01

    In the present work, a self-masked, dry, plasma texturing process for multi crystalline silicon (mc-Si) wafers has been developed that results in a higher cell performance than that with un-textured wafers. Plasma textured samples prepared have low levels (∼4%) of reflectance. Plasma damage of textured wafers has been eliminated by a damage removal etch (DRE). The improvement in efficiency of mc-Si solar cells up to 15.1% has been attributed to complete suppression of reflectivity (4-5%) in a broad spectral range (350-800 nm) leading to black silicon surface. Also, DRE on plasma textured wafers has been found to result in reduced surface damage compared to cells without DRE leading to higher cell efficiencies.

  9. Role of hydrogen plasma pretreatment in improving passivation of the silicon surface for solar cells applications.

    PubMed

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yanjian; Wei, Changchun; Sun, Jian; Zhao, Ying

    2014-09-10

    We have investigated the role of hydrogen plasma pretreatment in promoting silicon surface passivation, in particular examining its effects on modifying the microstructure of the subsequently deposited thin hydrogenated amorphous silicon (a-Si:H) passivation film. We demonstrate that pretreating the silicon surface with hydrogen plasma for 40 s improves the homogeneity and compactness of the a-Si:H film by enhancing precursor diffusion and thus increasing the minority carrier lifetime (τ(eff)). However, excessive pretreatment also increases the density of dangling bond defects on the surface due to etching effects of the hydrogen plasma. By varying the duration of hydrogen plasma pretreatment in fabricating silicon heterojunction solar cells based on textured substrates, we also demonstrate that, although the performance of the solar cells shows a similar tendency to that of the τ(eff) on polished wafers, the optimal duration is prolonged owing to the differences in the surface morphology of the substrates. These results suggest that the hydrogen plasma condition must be carefully regulated to achieve the optimal level of surface atomic hydrogen coverage and avoid the generation of defects on the silicon wafer. PMID:25141300

  10. Roughness formation on photoresist during etching examined by HBr plasma-beam

    NASA Astrophysics Data System (ADS)

    Sekine, Makoto; Zhang, Yan; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Hori, Masaru; Plasma Nanotechnology Team

    2014-10-01

    For highly precise patterning in device fabrication, it is required to suppress roughness formations on photoresist (PR) polymers during plasma etching. HBr plasma treatment called ``plasma cure'' was proposed to reduce the roughness. By using a beam irradiation, we reported the PR roughness formation in fluorocarbon plasma, and the effect of HBr cure. We report the roughness formation mechanism by surface analyses and power spectral density (PSD) of the roughness. Average slope and roll-off frequency of PSD are characterized by frequency components, the high-frequency roughness. We treated the data for six samples: a) pristine, b) after Ar plasma irradiation, c) after Ar plasma followed by HBr cure, d) after HBr cure, e) after HBr followed by Ar plasma beam, and f) after HBr followed by H2 and Ar plasma beam irradiations. The PSD slopes were changed by each process. Based on the results, we speculated that the Ar-plasma beam formed a crust layer on the PR surface with unrelieved stress and HBr cure may soften the bulk PR to relieve the stress and cause agglomeration of polymers at the size over 10 nm.

  11. Plasma-induced damage of GaAs during etching of refractory metal contacts

    SciTech Connect

    Shul, R.J.; Lovejoy, M.L.; Baca, A.G.; Zolper, J.C.; Rieger, D.J.; Hafich, M.J.; Corless, R.F.; Vartuli, C.B.

    1995-05-01

    The effect of plasma-induced damage on the majority carrier transport properties of {ital p}-type GaAs has been studied by monitoring changes in sheet resistance ({ital R}{sub {ital s}}) of thin conducting layers under various plasma conditions including etch conditions for refractory metal contacts. {ital R}{sub {ital s}} determined from transmission line measurements are used to evaluate plasma-induced damage for electron cyclotron resonance (ECR) and reactive ion etch (RIE) conditions by varying the thickness and doping of epitaxial layers. Damage depths calculated from {ital R}{sub {ital s}} data show a strong dependence on doping levels. This can be explained by a plasma-damage-induced trap density profile which tails off into the sample. Consistent trends have been observed where {ital R}{sub {ital s}} increases with increasing dc bias, increasing microwave power, and decreasing pressure, thus showing {ital R}{sub {ital s}} increases as either the ion energy or ion flux increases. The lowest plasma-induced damage observed in this study occurs with ECR at low microwave power and no rf biasing. Under rf-bias conditions, samples exposed to the ECR (1 mTorr total pressure) show more damage than those exposed to the RIE (8 mTorr total pressure) at comparable dc bias. We have also observed {ital R}{sub {ital s}} dependence on ECR plasma chemistry where {ital R}{sub {ital s}} is lower in SF{sub 6}/Ar plasmas than Ar and N{sub 2} plasmas possibly related to interactions of F or S atoms with the GaAs surface. Moderate anneal temperatures (200--500 {degree}C) have shown significant {ital R}{sub {ital s}} recovery. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}

  12. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  13. Etching characteristics and mechanisms of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Lim, Nomin; Efremov, Alexander; Yeom, Geun Young; Choi, Bok-Gil; Kwon, Kwang-Ho

    2014-11-01

    The etching characteristics and mechanism of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas under the same operating conditions (pressure, 6 mTorr; input power, 700 W; bias power, 200 W) were investigated. For both gas mixtures, an increase in the Ar fraction or gas pressure at a fixed gas mixing ratio was found to cause a non-monotonic change in the Mo etching rates. The X-ray photoelectron spectroscopy (XPS) diagnostics indicated contamination of the etched surfaces by reaction products. The Cl2/Ar and CF4/Ar plasma parameters were also investigated using a combination of a zero-dimensional plasma model and plasma diagnostics using Langmuir probes. An analysis of the etching kinetics with the model-predicted fluxes of the plasma active species suggests that: 1) the Mo etching process occurs in the transitional regime of the ion-assisted chemical reaction, and 2) the non-monotonic Mo etching rate is probably associated with opposing changes in the fluxes of the reactive neutral species and ion energy.

  14. The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

    NASA Astrophysics Data System (ADS)

    Steglich, Martin; Käsebier, Thomas; Zilk, Matthias; Pertsch, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2014-11-01

    Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) in a gas mixture of SF6 and O2 at non-cryogenic temperatures. The structure evolution and the dependency of final structure geometry on the main processing parameters gas composition and working pressure are investigated and explained comprehensively. The optical properties of the produced Black Silicon structures, a distinct antireflection and light trapping effect, are resolved by optical spectroscopy and conclusively illustrated by optical simulations of accurate models of the real nanostructures. By that the structure sidewall roughness is found to be critical for an elevated reflectance of Black Silicon resulting from non-optimized etching processes. By analysis of a multitude of structures fabricated under different conditions, approximate limits for the range of feasible nanostructure geometries are derived. Finally, the technological applicability of Black Silicon fabrication by ICP-RIE is discussed.

  15. Etching and structural changes in nitrogen plasma immersion ion implanted polystyrene films

    NASA Astrophysics Data System (ADS)

    Gan, B. K.; Bilek, M. M. M.; Kondyurin, A.; Mizuno, K.; McKenzie, D. R.

    2006-06-01

    Plasma immersion ion implantation (PIII), with nitrogen ions of energy 20 keV in the fluence range of 5 × 1014-2 × 1016 ions cm-2, is used to modify 100 nm thin films of polystyrene on silicon wafer substrates. Ellipsometry is used to study changes in thickness with etching and changes in optical constants. Two distinctly different etch rates are observed as the polymer structure is modified. FTIR spectroscopy data reveals the structural changes, including changes in aromatic and aliphatic groups and oxidation and carbonisation processes, occurring in the polystyrene film as a function of the ion fluence. The transformation to a dense amorphous carbon-like material was observed to progress through an intermediate structural form containing a high concentration of Cdbnd C and Cdbnd O bonds.

  16. Effect of Rare Gas Dilution of SF6 Plasma on RIE Etching Characteristics of SiC

    NASA Astrophysics Data System (ADS)

    Ganguly, J. D.; Bletzinger, B. N.

    1999-10-01

    The etch rates and the anisotropy of etched features of hexagonal 6H-SiC have been measured in a capacitively coupled rf discharge using SF_6+Ar and SF_6+He diluted gas mixtures. These measurements provide evidence for the generic nature of utilizing gas mixtures to modify electrical characteristics of rf discharges to optimize power coupling efficiency, although etch rates and surface morphology do not necessarily scale only with the plasma power coupling efficiency. In spite of the measured lower power deposition with He dilution compared to Ar, He diluted SF6 plasma resulted in 1.5 greater etch rates (up to 300 nm/min) with 50% He dilution, with better anisotropy and surface texture than comparable SF_6+Ar mixtures. Superior SiC etch performance was obtained with He dilution, compared to Ar, over the entire 10% up to 90% range despite lower power coupling efficiency and the notion that Ar^+ ions are expected to enhance ion assisted etch mechanism. The differences in dc self bias and volume plasma E/n leading to the conversion of SF_5^+ ions to SF_3^+ along with Penning ionization of SF6 by metastable He atoms may be responsible for the observed superior etch characteristics.

  17. Surface structure of Si(001) treated by hydrogen and argon electron cyclotron resonance plasmas

    NASA Astrophysics Data System (ADS)

    Diani, M.; Bischoff, J. L.; Kubler, L.; Bolmont, D.

    Si(001) surfaces subjected to H 2 or Ar ECR plasma irradiation are studied, in situ, from the standpoints of both impurity removal and induced crystallographic damage. The atomic cleanliness is checked by XPS (X-ray photoelectron spectroscopy) and UPS (ultra-violet photoelectron spectroscopy), while surface crystallographic information given by LEED and XPD (X-ray photoelectron diffraction) experiments. As an H ion-source, the ECR plant appears to be a convenient hydrogenation source, with low damage, able to passivate the surface in the usual hydrogenated LEED phases (dihydride 1 × 1 or monohydride 2 × 1) depending on the employed substrate temperature T. It presents nevertheless poor etching properties concerning the dioxide overlayer in our low plasma pressure domain (<5×10 -4 mbar). On the other hand, as an Ar ion source, the ECR plasma is more efficient to etch physically and clean, particularly at low working pressure and aided by a DC negative bias voltage and Ts increase but suffers from more crystallographic perturbations checked by the LEED disappearance and quantified by the decrease of the anisotropy factor related to the XPD contrast. Finally, a procedure which combines exposures to the cleaning Ar ions followed by a refinement Si etching of the damaged overlayers using the H plasma allows the attainment of clean reconstructed 2 × 1 surfaces with processing temperatures limited at 500°C and suitable for subsequent epitaxial growths.

  18. Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma

    SciTech Connect

    Zhang Guodong; Sun Weiguo; Xu Shuli; Zhao Hongyan; Su Hongyi; Wang Haizhen

    2009-07-15

    InSb is an important material for optoelectronic devices. Most InSb devices are currently wet etched, and the etching geometries are limited due to the isotropic nature of wet etching. Inductively coupled plasma (ICP)-reactive ion etching (RIE) is a more desirable alternative because it offers a means of producing small anisotropic structures especially needed in large format infrared focal plane arrays. This work describes the novel use of ICP-RIE for fabricating InSb mesas with CH{sub 4}/H{sub 2}/Ar plasma and presents the influences of the process parameters on the etch rate and surface morphology. The parameters investigated include bias radio frequency power (50-250 W), %CH{sub 4} in H{sub 2} (10-50), argon (Ar) partial pressure (0-0.3 Pa with total pressure of 1.0 Pa), and total pressure (0.35-4 Pa). With the process parameters optimized in this investigated ranges, good etching results have been achieved with etch rates up to 80 nm/min, and etch features with sidewall angles of about 80 degree sign , the etched surface is as smooth as before the RIE process.

  19. Ohmic contacts to plasma etched n-Al{sub 0.58}Ga{sub 0.42}N

    SciTech Connect

    Miller, M. A.; Mohney, S. E.; Nikiforov, A.; Cargill, G. S. III; Bogart, K. H. A.

    2006-09-25

    Plasma etching is required to expose n-Al{sub x}Ga{sub 1-x}N layers for bottom-emitting ultraviolet light emitting diodes grown on sapphire. However, etching can increase the difficulty of forming Ohmic contacts. X-ray photoelectron spectroscopy and cathodoluminescence reveal how the semiconductor changes with etching and help explain why it becomes more difficult to form an Ohmic contact. A V/Al/V/Au metallization has been investigated for Ohmic contacts to n-Al{sub 0.58}Ga{sub 0.42}N etched with a BCl{sub 3}/Cl{sub 2}/Ar chemistry. Increased V thickness and higher annealing temperatures were required to obtain a specific contact resistance of 4.7x10{sup -4} {omega} cm{sup 2} for etched n-Al{sub 0.58}Ga{sub 0.42}N compared to optimized contacts on unetched films.

  20. Oxide etch dusty plasma studies in the GEC reference cell using dynamic laser light scattering techniques

    SciTech Connect

    Anderson, H.M.; Radovanov, S.

    1995-12-31

    Particulate generation has been studied during reactive on etching (RIE) of oxide wafers in CF{sub 4}/CHF{sub 3} plasmas using the GEC Reference Cell. Under certain discharge process conditions, copious amounts of submicron particles form due to plasma interaction with the oxide substrate. Particles were observed in situ by laser light scattering (LLS) and dynamic laser light scattering (DLSS). DLLS can be used to determine information about particle size, motion, and growth dynamics. DLSS measurements show process-induced dust particles confined in an electrostatic trap exhibit low-frequency oscillatory motion consistent with charge density wave (CDW) motion. These results are also consistent with the plasma dust particles forming a strongly coupled Coulomb liquid phase.

  1. Low-damage low-k etching with an environmentally friendly CF{sub 3}I plasma

    SciTech Connect

    Soda, Eiichi; Kondo, Seiichi; Saito, Shuichi; Ichihashi, Yoshinari; Sato, Aiko; Ohtake, Hiroto; Samukawa, Seiji

    2008-07-15

    The feasibility of etching Cu/low-k interconnects by using a low global warming potential CF{sub 3}I plasma was studied. Low-damage etching was done and porous SiOC (p-SiOC, k<2.6) film with low roughness was produced. Exposing p-SiOC film to CF{sub 3}I plasma was found to suppress the decrease in the CH{sub 3} group and the increase in the k value compared to those of conventional CF{sub 4} and C{sub 4}F{sub 6} plasmas. These effects are due to the low UV intensity and small amount of F radicals of CF{sub 3}I plasma. The authors also found that the etching profile of CF{sub 3}I plasma was comparable with that of CF{sub 4} plasma. Since the etching selectivity (p-SiOC/ArF photoresist) of CF{sub 3}I plasma is higher than that of CF{sub 4} plasma, the remaining photoresist thickness increases after etching, thus suppressing line edge roughness (LER). The decreased LER mitigated degradation of IV and time dependent dielectric breakdown characteristics in Cu interconnects. They also found that the roughness on the bottom surface of the p-SiOC trench was reduced. These benefits are due to CF{sub 3}I plasma's low reactivity with the carbon in photoresists and p-SiOC films. Based on these findings, they believe that the environmentally friendly CF{sub 3}I gas has great promise as a p-SiOC etching material.

  2. Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O2/N2/CHF3 Plasma.

    PubMed

    Jeon, Min Hwan; Park, Jin Woo; Yun, Deok Hyun; Kim, Kyong Nam; Yeom, Geun Young

    2015-11-01

    The amorphous carbon layer (ACL), used as the hardmask for the etching of nanoscale semi-conductor materials, was etched using O2/CHF3 in addition to O2/N2 using pulsed dual-frequency capacitively coupled plasmas, and the effects of source power pulsing for different gas combinations on the characteristics of the plasmas and ACL etching were investigated. As the etch mask for ACL, a patterned SiON layer was used. The etch rates of ACL were decreased with the decrease of pulse duty percentage for both O2/N2 and O2/CHF3 due to decrease of the reactive radicals, such as F and O, with decreasing pulse duty percentage. In addition, at the same pulse duty percentage, the etch selectivity of ACL/SiON with O2/CHF3 was also significantly lower than that with O2/N2. However, the etch profiles of ACL with O2/CHF3 was more anisotropic and the etch profiles were further improved with decreasing the pulse duty percentage than those of ACL with O2/N2. The improved anisotropic etch profiles of ACL with decreasing pulse duty percentage for O2/CHF3 were believed to be related to the formation of a more effective passivation layer, such as a thick fluorocarbon layer, on the sidewall of the ACL during the etching with O2/CHF3, compared to the weak C-N passivation layer formed on the sidewall of ACL when using O2/N2. PMID:26726555

  3. Characterization of plasma etching induced interface states at Ti/p-SiGe Schottky contacts

    SciTech Connect

    Mamor, M.; Sellai, A.

    2008-07-15

    The authors have used current-voltage (I-V) data measured over a wide temperature range (100-300 K) complemented by deep level transient spectroscopy (DLTS) for the assessment of the defects introduced in Si{sub 0.95}Ge{sub 0.05} by argon plasma sputter etching. From DLTS, defect concentration depth profiling was extracted and revealed that the main defect introduced during argon plasma sputtering is located very close to the surface. I-V-T analysis shows that the electrical characteristics deviated from the ideal case and indicate the presence of interface states, resulting from the plasma etching induced surface states at Ti/Si{sub 0.95}Ge{sub 0.05} interface. The interface state density as well as its temperature dependence were obtained from forward bias I-V-T measurements by considering the bias dependence of effective barrier height {phi}{sub e}. It is found that interface states density is temperature dependent although weakly.

  4. Laser-induced gas plasma etching of fused silica under ambient conditions

    NASA Astrophysics Data System (ADS)

    Elhadj, Selim; Guss, Gabe; Matthews, Manyalibo J.; Bass, Isaac

    2012-11-01

    Laser machining of optics to mitigate surface defects has greatly enhanced the ability to process large optics such as those found in fusion-class lasers. Recently, the use of assist reactive gases has shown promise in enhancing manifold etching rates relative to ambient conditions for CW-laser exposures. However, these methods still require significant heating of the substrate that induce residual stress, redeposit coverage, material flow, and compromise the final surface finish and damage threshold. While very reactive fluorinated gases are capable to reduce treatment temperatures even further, they are also inherently toxic and not readily transferable to large processing facilities. In this report, we look at whether a short-lived gas plasma could provide the safe and effective etchant sought, while still reducing the thermal load on the surface. We test this approach using a YAG laserinduced gas plasma to act as a source of the etchant for fused silica, a common optical material. The configuration and orientation of the beam and optical apparatus with respect to the surface was critical in preventing surface damage while etching the surface. Results with N2 and air gas plasmas are shown, along with a description of the various experimental implementations attempted.

  5. Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

    NASA Astrophysics Data System (ADS)

    Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

    2015-03-01

    Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

  6. Absolute Intensities of the Vacuum Ultraviolet Spectra in a Metal-Etch Plasma Processing Discharge

    SciTech Connect

    Aragon, B.P.; Blain, M.G.; Hamilton, T.W.; Jarecki, R.L.; Woodworth, J.R.

    1998-12-09

    In this paper we report absolute intensities of vacuum ultraviolet and near ultraviolet emission lines (4.8 eV to 18 eV ) for aluminum etching discharges in an inductively coupled plasma reactor. We report line intensities as a function of wafer type, pressure, gas mixture and rf excitation level. IrI a standard aluminum etching mixture containing C12 and BC13 almost all the light emitted at energies exceeding 8.8 eV was due to neutral atomic chlorine. Optical trapping of the WV radiation in the discharge complicates calculations of VUV fluxes to the wafer. However, we see total photon fluxes to the wailer at energies above 8.8 eV on the order of 4 x 1014 photons/cm2sec with anon- reactive wafer and 0.7 x 10 `4 photons/cm2sec with a reactive wtier. The maj ority of the radiation observed was between 8.9 and 9.3 eV. At these energies, the photons have enough energy to create electron-hole pairs in Si02, but may penetrate up to a micron into the Si02 before being absorbed. Relevance of these measurements to vacuum-W photon-induced darnage of Si02 during etching is discussed.

  7. Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge

    SciTech Connect

    Woodworth, J.R.; Blain, M.G.; Jarecki, R.L.; Hamilton, T.W.; Aragon, B.P.

    1999-11-01

    In this article we report absolute intensities of vacuum ultraviolet (VUV) and near ultraviolet emission lines (4.8{endash}18 eV) for discharges used to etch aluminum in a commercial inductively coupled plasma reactor. We report line intensities as functions of wafer type, pressure, gas mixture, and radio frequency excitation level. In a standard aluminum etching mixture containing Cl{sub 2} and BCl{sub 3} almost all the light emitted at energies exceeding 8.8 eV was due to neutral atomic chlorine. Optical trapping of the VUV radiation in the discharge complicates calculations of VUV fluxes to the wafer. However, we measured total photon fluxes to the wafer at energies above 8.8 eV on the order of 4{times}10{sup 14}&hthinsp;photons/cm{sup 2}&hthinsp;s with a nonreactive wafer and 0.7{times}10{sup 14}&hthinsp;photons/cm{sup 2}&hthinsp;s with a reactive wafer. The majority of the radiation was between 8.9 and 9.3 eV. At these energies, the photons have enough energy to create electron-hole pairs in SiO{sub 2} and may penetrate up to a micron into the SiO{sub 2} before being absorbed. Relevance of these measurements to VUV photon-induced damage of SiO{sub 2} during etching is discussed. {copyright} {ital 1999 American Vacuum Society.}

  8. Nanometer fabrication in mercury cadmium telluride by electron cyclotron resonance microwave plasma reactive ion etching

    NASA Astrophysics Data System (ADS)

    Eddy, C. R.; Hoffman, C. A.; Meyer, J. R.; Dobisz, E. A.

    1993-08-01

    It has been recently reported (J.R. Meyer, F.J. Bartoli, C.A. Hoffman, and L.R. Ram-Mohan, Phys. Rev. Lett. 64, 1963 [1990]) that novel electronic and optical effects are anticipated in nanometer scale features of narrow band gap semiconductors such as mercury cadmium telluride (MCT). These efforts could lead to the creation of non-linear optical switches, high efficiency infrared lasers, and unique nanoelectronic devices. This work reports on the first realization of MCT nanostructures through the application of e-beam lithography and reactive ion etching with an electron cyclotron resonance (ECR) microwave plasma source. It is shown that the low energy ions produced by an ECR system can etch MCT with good selectivity over an e-beam resist mask and with high resolution. Using these fabrication methods, 40 70 nm features with aspect ratios of 3 5∶1 and sidewall angles greater than 88° have been demonstrated. Qualitative investigations of some of the etch mechanisms of this technique are made, and results suggest a desorption limited process.

  9. Electron cyclotron resonance plasma etching of native TiO{sub 2} on TiN

    SciTech Connect

    Day, M.E.; Delfino, M.

    1996-01-01

    Thin-film polycrystalline Tin with an approximate 2 nm thick native TiO{sub 2} overlayer is bombarded with 50 to 200 eV Ar ions in an electron cyclotron resonance plasma. In situ X-ray photoelectron spectroscopy and static secondary ion mass spectrometry suggest complete removal of oxygen from the planar surface, independent of ion energy, with TiO{sub 2} remaining on the columnar grain boundaries. The TiN etching rate increases from 6 to 14 nm/min as the ion energy is raised from 100 to 200 eV. The TiN stoichiometry does not change with ion bombardment.

  10. Dry etching characteristics of amorphous As{sub 2}S{sub 3} film in CHF{sub 3} plasma

    SciTech Connect

    Choi, Duk-Yong; Madden, Steve; Rode, Andrei; Wang, Rongping; Luther-Davies, Barry

    2008-12-01

    The authors describe the dry etching characteristics of amorphous As{sub 2}S{sub 3} films in CHF{sub 3} plasma and the development of an optimized fabrication process for compact waveguides. The observed etching behavior is due to the relative densities of fluorine atoms, polymer precursors, and ions in the plasma which are controlled by the process parameters. In particular, the flow rate of the CHF{sub 3} gas has a significant influence on the etched profile and surface roughness as well as the etch rate of the As{sub 2}S{sub 3}. The profile evolves from isotropic to vertical with the flow rate due to passivation by increasing polymer deposition on the sidewalls. Such passivation also helps achieve smooth sidewalls because it inhibits differential etching between the phases in the inherently phase-separated As{sub 2}S{sub 3} film, which otherwise results in a grainy and rough etched surface. At the highest flow rate, however, excessive polymer deposition occurs and this results in positive-sloped sidewall and grassy etched surface due to micromasking.

  11. Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

    NASA Astrophysics Data System (ADS)

    Altamore, C.; Tringali, C.; Sparta', N.; Di Marco, S.; Grasso, A.; Ravesi, S.

    2010-02-01

    In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (105) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 101 Hz to 106 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl2/Ar chemistry. The relationship between the etch rate and the Cl2/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl2/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

  12. Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

    SciTech Connect

    Park, Y. R.; Ahn, J. H.; Kim, J. S.; Kwon, B. S.; Lee, N.-E.; Kang, H. Y.; Hwangbo, C. K.; Ahn, Jinho; Seo, Hwan Seok

    2010-07-15

    Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl{sub 2}/Ar gas flow ratio, dc self-bias voltage (V{sub dc}), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl{sub 2}/Ar plasma even with a very high overetch time.

  13. Plasma probe characteristics in low density hydrogen pulsed plasmas

    NASA Astrophysics Data System (ADS)

    Astakhov, D. I.; Goedheer, W. J.; Lee, C. J.; Ivanov, V. V.; Krivtsun, V. M.; Zotovich, A. I.; Zyryanov, S. M.; Lopaev, D. V.; Bijkerk, F.

    2015-10-01

    Probe theories are only applicable in the regime where the probe’s perturbation of the plasma can be neglected. However, it is not always possible to know, a priori, that a particular probe theory can be successfully applied, especially in low density plasmas. This is especially difficult in the case of transient, low density plasmas. Here, we applied probe diagnostics in combination with a 2D particle-in-cell model, to an experiment with a pulsed low density hydrogen plasma. The calculations took into account the full chamber geometry, including the plasma probe as an electrode in the chamber. It was found that the simulations reproduce the time evolution of the probe IV characteristics with good accuracy. The disagreement between the simulated and probe measured plasma density is attributed to the limited applicability of probe theory to measurements of low density pulsed plasmas on a similarly short time scale as investigated here. Indeed, in the case studied here, probe measurements would lead to, either a large overestimate, or underestimate of the plasma density, depending on the chosen probe theory. In contrast, the simulations of the plasma evolution and the probe characteristics do not suffer from such strict applicability limits. These studies show that probe theory cannot be justified through probe measurements. However, limiting cases of probe theories can be used to estimate upper and lower bounds on plasma densities. These theories include and neglect orbital motion, respectively, with different collisional terms leading to intermediate estimates.

  14. Plasma treatment of dentin surfaces for improving self-etching adhesive/dentin interface bonding

    PubMed Central

    Dong, Xiaoqing; Li, Hao; Chen, Meng; Wang, Yong; Yu, Qingsong

    2015-01-01

    This study is to evaluate plasma treatment effects on dentin surfaces for improving self-etching adhesive and dentin interface bonding. Extracted unerupted human third molars were used after crown removal to expose dentin. One half of each dentin surface was treated with atmospheric non-thermal argon plasmas, while another half was untreated and used as the same tooth control. Self-etching adhesive and universal resin composite was applied to the dentin surfaces as directed. After restoration, the adhesive-dentin bonding strength was evaluated by micro-tensile bonding strength (μTBS) test. Bonding strength data was analyzed using histograms and Welch’s t-test based on unequal variances. μTBS test results showed that, with plasma treatment, the average μTBS value increased to 69.7±11.5 MPa as compared with the 57.1±17.5 MPa obtained from the untreated controls. After 2 months immersion of the restored teeth in 37 °C phosphate buffered saline (PBS), the adhesive-dentin bonding strengths of the plasma-treated specimens slightly decreased from 69.7±11.5 MPa to 63.9±14.4 MPa, while the strengths of the untreated specimens reduced from 57.1±17.5 MPa to 48.9±14.6 MPa. Water contact angle measurement and scanning electron microscopy (SEM) examination verified that plasma treatment followed by water rewetting could partially open dentin tubules, which could enhance adhesive penetration to form thicker hybrid layer and longer resin tags and consequently improve the adhesive/dentin interface quality. PMID:26273561

  15. Effect of Cl{sub 2}/Ar gas mixing ratio on (Pb,Sr)TiO{sub 3} thin film etching behavior in inductively coupled plasma

    SciTech Connect

    Kim, Gwan-Ha; Kim, Chang-Il

    2006-07-15

    The development of anisotropic etching process for (Pb,Sr)TiO{sub 3} (PST) thin films is an important task to provide a small feature size and an accurate pattern transfer. Etching characteristics of PST thin films were investigated using inductively coupled plasma etching system as functions of Cl{sub 2}/Ar gas mixing ratio. The PST etch rate increased with the increase of chlorine radical and ion energy intensity. It was found that the increasing of Ar content in gas mixture lead to sufficient increasing of etch rate. The maximum etch rate of PST film is 56.2 nm/min at Cl{sub 2}/(Cl{sub 2}+Ar) of 0.2. It was proposed that the sputter etching is a dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

  16. Optimization of time on CF4/O2 etchant for inductive couple plasma reactive ion etching of TiO2 thin film

    NASA Astrophysics Data System (ADS)

    Adzhri, R.; Arshad, M. K. Md.; Fathil, M. F. M.; Hashim, U.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; M. Nuzaihan M., N.; Azman, A. H.; Zaki, M.

    2016-07-01

    In this work, we investigate the optimum etching of titanium dioxide (TiO2) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF4/O2 gases as plasma etchant with ratio of 3:1, three samples of TiO2 thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF4 gases with plasma enhancement by O2 gas able to break the oxide bond of TiO2 and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

  17. Impact of the etching gas on vertically oriented single wall and few walled carbon nanotubes by plasma enhanced chemical vapor deposition

    SciTech Connect

    Gohier, A.; Minea, T. M.; Djouadi, M. A.; Granier, A.

    2007-03-01

    Vertically oriented single wall nanotubes (SWNTs) and few walled nanotubes (FWNTs) have been grown by electronic cyclotron resonance plasma enhanced chemical vapor deposition (PECVD) on silica flat substrates. The impact of the plasma parameters on SWNT and FWNT growth has been investigated using two different etching gas mixtures, namely, C{sub 2}H{sub 2}/NH{sub 3} and C{sub 2}H{sub 2}/H{sub 2} with various ratios and applied bias voltages. Kinetic studies are also proposed in order to describe the FWNT growth mechanism by plasma techniques. A key role played by the reactive gas (NH{sub 3} and H{sub 2}) is observed in the PECVD process, contrary to multiwalled nanotube growth. It is demonstrated that the balance between FWNT growth versus FWNT etching can be widely modulated by varying the gas mixture and bias voltage. It is shown that the use of hydrogen for hydrocarbon gas dilution restricts the destruction of SWNT and FWNT by the plasma species (ions and radicals)

  18. Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

    NASA Astrophysics Data System (ADS)

    Lu, J.; Meng, X.; Springthorpe, A. J.; Shepherd, F. R.; Poirier, M.

    2004-05-01

    A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated ``T electrodes'' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ~0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 °C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes. .

  19. Plasma etching and ashing: a technique for demonstrating internal structures of helminths using scanning electron microscopy.

    PubMed

    Veltkamp, C J; Chubb, J C

    2006-03-01

    Plasma etching and ashing for demonstrating the three-dimensional ultrastructure of the internal organs of helminths is described. Adult worms of the cestode Caryophyllaeides fennica were dehydrated through an ethanol series, critical point dried (Polaron E3000) and sputter coated with 60% gold-palladium (Polaron E5100) and glued to a standard scanning electron microscope (SEM) stub positioned as required for ashing. After initial SEM viewing of worm surfaces for orientation, stubs were placed individually in the reactor chamber of a PT7150 plasma etching and ashing machine. Worms were exposed to a radio frequency (RF) potential in a low pressure (0.2 mbar) oxygen atmosphere at room temperature. The oxidation process was controlled by varying the times of exposure to the RF potential between 2 to 30 min, depending on the depth of surface tissue to be removed to expose target organs or tissues. After each exposure the oxidized layer was blown from the surface with compressed air, the specimen sputter-coated, and viewed by SEM. The procedure was repeated as necessary, to progressively expose successive layers. Fine details of organs, cells within, and cell contents were revealed. Ashing has the advantage of providing three dimensional images of the arrangement of organs that are impossible to visualize by any other procedure, for example facilitating testes counts in cestodes. Both freshly-fixed and long-term stored helminths can be ashed. Ashing times to obtain the desired results were determined by trial so that some duplicate material was needed. PMID:16469178

  20. Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

    NASA Astrophysics Data System (ADS)

    Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  1. Formation mechanism of graphite hexagonal pyramids by argon plasma etching of graphite substrates

    NASA Astrophysics Data System (ADS)

    Glad, X.; de Poucques, L.; Bougdira, J.

    2015-12-01

    A new graphite crystal morphology has been recently reported, namely the graphite hexagonal pyramids (GHPs). They are hexagonally-shaped crystals with diameters ranging from 50 to 800 nm and a constant apex angle of 40°. These nanostructures are formed from graphite substrates (flexible graphite and highly ordered pyrolytic graphite) in low pressure helicon coupling radiofrequency argon plasma at 25 eV ion energy and, purportedly, due to a physical etching process. In this paper, the occurrence of peculiar crystals is shown, presenting two hexagonal orientations obtained on both types of samples, which confirms such a formation mechanism. Moreover, by applying a pretreatment step with different time durations of inductive coupling radiofrequency argon plasma, for which the incident ion energy decreases at 12 eV, uniform coverage of the surface can be achieved with an influence on the density and size of the GHPs.

  2. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    SciTech Connect

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  3. Etching mechanism of MgO thin films in inductively coupled Cl{sub 2}/Ar plasma

    SciTech Connect

    Efremov, A.M.; Koo, Seong-Mo; Kim, Dong-Pyo; Kim, Kyoung-Tae; Kim, Chang-Il

    2004-09-01

    The etching mechanism of MgO thin films in Cl{sub 2}/Ar plasma was investigated. It was found that the increasing Ar in the mixing ratio of Cl{sub 2}/Ar plasma causes nonmonotonic MgO etch rate, which reaches a maximum value at 70%Ar+30%Cl{sub 2}. Langmuir probe measurement showed the noticeable influence of Cl{sub 2}/Ar mixing ratio on electron temperature and electron density. The zero-dimensional plasma model indicated monotonic changes of both densities and fluxes of active species. At the same time, analyses of surface kinetics showed the possibility of nonmonotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction.

  4. Origin of electrical signals for plasma etching end point detection: Comparison of end point signals and electron density

    SciTech Connect

    Sobolewski, Mark A.; Lahr, David L.

    2012-09-15

    Electrical signals are used for end point detection in plasma etching, but the origin of the electrical changes observed at end point is not well understood. As an etch breaks through one layer and exposes an underlayer, the fluxes and densities of etch products and reactants in the gas phase will change. The resulting perturbation in gas composition may alter the plasma electron density, which in turn may affect the electrical signals. Alternatively, changes in substrate electrical properties or surface properties, such as work function or emitted electron yield, may be involved. To investigate these effects, experiments were performed in a radio-frequency (rf)-biased, inductively coupled reactor, during CF{sub 4}/Ar plasma etching of silicon dioxide films on silicon substrates. A complete set of electrical parameters, for the bias as well as the inductive source, was measured and compared. The most useful end point signal was found to be the fundamental rf bias impedance, which decreases when the oxide is removed. A simultaneous increase in plasma electron density was measured by a wave cutoff probe. Analytical sheath models indicate that the measured change in electron density accounts for nearly all of the impedance decrease. The change in electron density can in turn be explained by the effects of etch products or reactants on gas composition. In contrast, electrons emitted from the wafer surface play at most a minor role in the changes in electron density and impedance observed at end point.

  5. Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma

    SciTech Connect

    Kwon, Kwang-Ho; Efremov, Alexander; Ham, Yong-Hyun; Min, Nam Ki; Lee, Hyun Woo; Hong, Mun Pyo; Kim, Kwangsoo

    2010-01-15

    The investigations of etch characteristics and mechanisms for indium tin oxide (In{sub 2}O{sub 3}){sub 0.9}:(SnO{sub 2}){sub 0.1} (ITO) thin films using HBr/Ar inductively coupled plasma were carried out. The ITO etch rate was measured in the range of 0%-100% Ar in the HBr/Ar mixture at fixed gas pressure (6 mTorr), input power (700 W), and bias power (200 W). Plasma parameters and composition were examined with a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. It was found that the ITO etch rate follows the behavior of Br atom flux but contradicts with that for H atoms and positive ions. This suggests that the ITO etch process is not limited by the ion-surface interaction kinetics and appears in the reaction-rate-limited etch regime with the Br atoms as the main chemically active species.

  6. Producing Hydrogen by Plasma Pyrolysis of Methane

    NASA Technical Reports Server (NTRS)

    Atwater, James; Akse, James; Wheeler, Richard

    2010-01-01

    Plasma pyrolysis of methane has been investigated for utility as a process for producing hydrogen. This process was conceived as a means of recovering hydrogen from methane produced as a byproduct of operation of a life-support system aboard a spacecraft. On Earth, this process, when fully developed, could be a means of producing hydrogen (for use as a fuel) from methane in natural gas. The most closely related prior competing process - catalytic pyrolysis of methane - has several disadvantages: a) The reactor used in the process is highly susceptible to fouling and deactivation of the catalyst by carbon deposits, necessitating frequent regeneration or replacement of the catalyst. b) The reactor is highly susceptible to plugging by deposition of carbon within fixed beds, with consequent channeling of flow, high pressure drops, and severe limitations on mass transfer, all contributing to reductions in reactor efficiency. c) Reaction rates are intrinsically low. d) The energy demand of the process is high.

  7. Etching of graphene in a Hydrogen-rich Atmosphere towards the Formation of Hydrocarbons in Circumstellar Clouds

    PubMed Central

    Martínez, José I.; Martín-Gago, José A.; Cernicharo, José; de Andres, Pedro L.

    2015-01-01

    We describe a mechanism that explains the formation of hydrocarbons and hydrocarbyls from hydrogenated graphene/graphite; hard C–C bonds are weakened and broken by the synergistic effect of chemisorbed hydrogen and high temperature vibrations. Total energies, optimized structures, and transition states are obtained from Density Functional Theory simulations. These values have been used to determine the Boltzman probability for a thermal fluctuation to overcome the kinetic barriers, yielding the time scale for an event to occur. This mechanism can be used to rationalize the possible routes for the creation of small hydrocarbons and hydrocarbyls from etched graphene/graphite in stellar regions. PMID:26709358

  8. Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas

    NASA Astrophysics Data System (ADS)

    Li, Juntao; Xia, Yangyang; Liu, Bo; Feng, Gaoming; Song, Zhitang; Gao, Dan; Xu, Zhen; Wang, Weiwei; Chan, Yipeng; Feng, Songlin

    2016-08-01

    Chalcogenide glasses based on Ge-Te-Sb are processed using reactive ion etching (RIE) in the fabrication of phase change memory (PCM). These materials are known to be halogenated easily and apt to be damaged when exposed to halogen gas based plasmas which can cause severe halogenation-induced degradation. In this paper, we investigate the RIE induced damage of popular phase change material Ge2Sb2Te5 (GST) in different halogen based plasmas (CF4, Cl2 and HBr) highly diluted by argon. After blanket etching, results of scanning electron microscopy and atomic force microscopy directly showed that the surface of Cl2 etched samples were roughest with a Ge deficient damaged layer. X-ray photoelectron spectroscopy was performed to investigate the chemical shift of constituent elements. Selected scans over the valence band peaks of Te 3d revealed that electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on the GST etched by CF4. The GST films masked with patterned TiN were also etched. High-resolution transmission electron microscopy and surface scan directly showed the line profile and the damaged layer. Almost vertical and smooth sidewall without damaged layer makes HBr a promising gas for GST etch in the fabrication of high-density memory devices.

  9. Dry etching of metallization

    NASA Technical Reports Server (NTRS)

    Bollinger, D.

    1983-01-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  10. Plasma and ion etching for failure analysis. Part 1: Review of current theory and techniques

    NASA Astrophysics Data System (ADS)

    Hardman, M.; Mapper, D.; Farren, J.; Stephen, J. H.

    1985-07-01

    The state-of-the-art for the etching of semiconductor device materials, as applied to failure analysis, is reviewed. The basic mechanisms and techniques of dry etching were studied. Process parameters, such as rf power, gas mixture, pressure, and temperature and their effect on the etch process are reported. The Giga-Etch 100 E method of dry etching is recommended. Equipment available on the market is listed.

  11. Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

    SciTech Connect

    Tokuda, Yutaka; Shimada, Hitoshi

    1998-12-31

    Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E{sub c} {minus} 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen.

  12. Microwave plasma torches used for hydrogen production

    NASA Astrophysics Data System (ADS)

    Dias, F. M.; Bundaleska, N.; Henriques, J.; Tatarova, E.; Ferreira, C. M.

    2014-06-01

    A microwave plasma torch operating at 2.45 GHz and atmospheric pressure has been used as a medium and a tool for decomposition of alcohol in order to produce molecular hydrogen. Plasma in a gas mixture of argon and ethanol/methanol, with or without water, has been created using a waveguide surfatron launcher and a microwave generator delivering a power in the range 0.2-2.0 kW. Mass, Fourier Transform Infrared, and optical emission spectrometry have been applied as diagnostic tools. The decomposition yield of methanol was nearly 100 % with H2, CO, CO2, H2O, and solid carbon as the main reaction products. The influence of the fraction of Ar flow through the liquid ethanol/methanol on H2, CO, and CO2 partial pressures has been investigated, as well as the dependence of the produced H2 flow on the total flow and power. The optical emission spectrum in the range 250-700 nm has also been detected. There is a decrease of the OH(A-X) band intensity with the increase of methanol in the mixture. The emission of carbon atoms in the near UV range (240-300 nm) exhibits a significant increase as the amount of alcohol in the mixture grows. The obtained results clearly show that this microwave plasma torch at atmospheric pressure provides an efficient plasma environment for hydrogen production.

  13. Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

    NASA Astrophysics Data System (ADS)

    Wang, Cong; Li, Yang; Yao, Zhao; Kim, Hong-Ki; Kim, Hyung-Jun; Kim, Nam-Young

    2014-09-01

    Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/ 2 , Ba 3d 3/ 2 , Ti 2p 3/ 2 , Ti 2p 1/ 2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively.

  14. Plasma etching of SiO2 using remote-type pin-to-plate dielectric barrier discharge

    NASA Astrophysics Data System (ADS)

    Park, Jae Beom; Kyung, Se Jin; Yeom, Geun Young

    2008-10-01

    Atmospheric pressure plasma etching of SiO2 was examined using a modified remote-type dielectric barrier discharge (DBD), called "pin-to-plate DBD." The effect of adding four gases CF4, C4F8, O2, and Ar to the base gas mixture containing N2 (60 slm) (slm denotes standard liters per minute)/NF3 (600 SCCM) (SCCM denotes cubic centimeter per minute at STP) on the SiO2 etch characteristics was investigated. The results showed that the SiO2 etch rate decreased continuously with increasing C4F8 (200-800 SCCM) addition, whereas the SiO2 etch rate increased with increasing CF4 (1-10 slm) addition up to 7 slm CF4. This increase in the SiO2 etch rate up to 7 slm CF4 was attributed to the effective removal of Si in SiO2 by F atoms through the removal of oxygen in SiO2 by carbon in the CFX in the plasma. However, the decrease in SiO2 etch rate with further increases in CF4 flow rate above 7 slm was attributed to the formation of a thick C-F polymer layer on the SiO2 surface. A SiO2 etch rate of approximately 243 nm/min was obtained with a gas mixture of N2 (60 slm)/NF3 (600 SCCM)/CF4 (7 slm), and an input voltage and operating frequency to the source of 10 kV and 30 kHz, respectively. The addition of 200 SCCM Ar to the above gas mixture increased the SiO2 etch rate to approximately 263 nm/min. This is possibly due to the increased ionization and dissociation of reactive species through penning ionization of Ar.

  15. Polysilicon planarization and plug recess etching in a decoupled plasma source chamber using two endpoint techniques

    NASA Astrophysics Data System (ADS)

    Kaplita, George A.; Schmitz, Stefan; Ranade, Rajiv; Mathad, Gangadhara S.

    1999-09-01

    The planarization and recessing of polysilicon to form a plug are processes of increasing importance in silicon IC fabrication. While this technology has been developed and applied to DRAM technology using Trench Storage Capacitors, the need for such processes in other IC applications (i.e. polysilicon studs) has increased. Both planarization and recess processes usually have stringent requirements on etch rate, recess uniformity, and selectivity to underlying films. Additionally, both processes generally must be isotropic, yet must not expand any seams that might be present in the polysilicon fill. These processes should also be insensitive to changes in exposed silicon area (pattern factor) on the wafer. A SF6 plasma process in a polysilicon DPS (Decoupled Plasma Source) reactor has demonstrated the capability of achieving the above process requirements for both planarization and recess etch. The SF6 process in the decoupled plasma source reactor exhibited less sensitivity to pattern factor than in other types of reactors. Control of these planarization and recess processes requires two endpoint systems to work sequentially in the same recipe: one for monitoring the endpoint when blanket polysilicon (100% Si loading) is being planarized and one for monitoring the recess depth while the plug is being recessed (less than 10% Si loading). The planarization process employs an optical emission endpoint system (OES). An interferometric endpoint system (IEP), capable of monitoring lateral interference, is used for determining the recess depth. The ability of using either or both systems is required to make these plug processes manufacturable. Measuring the recess depth resulting from the recess process can be difficult, costly and time- consuming. An Atomic Force Microscope (AFM) can greatly alleviate these problems and can serve as a critical tool in the development of recess processes.

  16. Effect of plasma etching on destructive adsorption properties of polypropylene fibers containing magnesium oxide nanoparticles.

    PubMed

    Lange, Laura E; Obendorf, S Kay

    2012-02-01

    Dermal absorption of pesticides poses a danger for agricultural workers. Use of personal protection equipment (PPE) is required to provide protection; some of the current PPE involves impermeable barriers. In these barrier materials, the same mechanism that prevents the penetration of toxic chemicals also blocks the passage of water vapor and air from flowing through the material, making the garments uncomfortable. Fibers that degrade organophosphate pesticides, such as methyl parathion, were developed by incorporating metal oxides. These modified fibers can be incorporated into conventional fabric structures that allow water vapor to pass through, thereby maintaining comfort. Fibers with self-decontamination functionality were developed by incorporating magnesium oxide (MgO) nanoparticles into a polypropylene (PP) melt-extruded fiber. These fibers were then treated with plasma etching to expose increased surface area of the MgO nanoparticles. Three steps were involved in this research project: (1) determining the reactivity of MgO and methyl parathion, (2) making melt-spun MgO/PP fibers, and (3) testing the reactivity of MgO/PP composite fibers and methyl parathion. It was confirmed that MgO stoichiometrically degrades methyl parathion by way of destructive adsorption. The etching of the PP fibers containing MgO nanoparticles increased the chemical accessibility of MgO reactive sites, therefore making them more effective in degrading methyl parathion. These fibers can enhance the protection provided by PPE to agricultural and horticultural workers and military personnel. PMID:21850511

  17. Single-crystal superconducting nanowires of NbSe{sub 2} fabricated by reactive plasma etching

    SciTech Connect

    Mills, Shaun A.; Staley, Neal E.; Wisser, Jacob J.; Shen, Chenyi; Xu, Zhuan; Liu, Ying

    2014-02-03

    We present the preparation and measurements of nanowires of single-crystal NbSe{sub 2}. These nanowires were prepared on ultrathin (≲10 nm) flakes of NbSe{sub 2} mechanically exfoliated from a bulk single crystal using a process combining electron beam lithography and reactive plasma etching. The electrical contacts to the nanowires were prepared using Ti/Au. Our technique, which overcomes several limitations of methods developed previously for fabricating superconducting nanowires, also allows for the preparation of complex superconducting nanostructures with a desired geometry. Current-voltage characteristics of individual superconducting single-crystal nanowires with widths down to 30 nm and cross-sectional areas as low as 270 nm{sup 2} were measured.

  18. Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides.

    PubMed

    Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

    2015-10-01

    We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectroscopy and atomic force microscopy that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. PMID:26480176

  19. Dry etching method for compound semiconductors

    DOEpatents

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  20. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  1. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

    PubMed

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2014-01-01

    We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching. PMID:24521208

  2. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

    PubMed Central

    2014-01-01

    We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching. PMID:24521208

  3. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

    NASA Astrophysics Data System (ADS)

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2014-02-01

    We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

  4. Particle formation and its control in dual frequency plasma etching reactors

    SciTech Connect

    Kim, Munsu; Cheong, Hee-Woon; Whang, Ki-Woong

    2015-07-15

    The behavior of a particle cloud in plasma etching reactors at the moment when radio frequency (RF) power changes, that is, turning off and transition steps, was observed using the laser-light-scattering method. Two types of reactors, dual-frequency capacitively coupled plasma (CCP) and the hybrid CCP/inductively coupled plasma (ICP), were set up for experiments. In the hybrid CCP/ICP reactor (hereafter ICP reactor), the position and shape of the cloud were strongly dependent on the RF frequency. The particle cloud becomes larger and approaches the electrode as the RF frequency increases. By turning the lower frequency power off later with a small delay time, the particle cloud is made to move away from the electrode. Maintaining lower frequency RF power only was also helpful to reduce the particle cloud size during this transition step. In the ICP reactor, a sufficient bias power is necessary to make a particle trap appear. A similar particle cloud to that in the CCP reactor was observed around the sheath region of the lower electrode. The authors can also use the low-frequency effect to move the particle cloud away from the substrate holder if two or more bias powers are applied to the substrate holder. The dependence of the particle behavior on the RF frequencies suggests that choosing the proper frequency at the right moment during RF power changes can reduce particle contamination effectively.

  5. Argon plasma inductively coupled plasma reactive ion etching study for smooth sidewall thin film lithium niobate waveguide application

    NASA Astrophysics Data System (ADS)

    Ulliac, G.; Calero, V.; Ndao, A.; Baida, F. I.; Bernal, M.-P.

    2016-03-01

    Lithium Niobate (LN) exhibits unique physical properties such as remarkable electro-optical coefficients and it is thus an excellent material for a wide range of fields like optic communications, lasers, nonlinear optical applications, electric field optical sensors etc. In order to further enhance the optical device performance and to be competitive with silicon photonics, sub-micrometric thickness lithium niobate films are crucial. A big step has been achieved with the development of LN thin films by using smart cut technology and wafer bonding and these films are nowadays available in the market. However, it is a challenge to obtain the requirements of the high quality thin LN film waveguide. In this letter, we show smooth ridge waveguides fabricated on 700 nm thickness thin film lithium niobate (TFLN). The fabrication has been done by developing and optimizing three steps of the technological process, the mask fabrication, the plasma etching, and a final cleaning wet etching step in order to remove the lithium niobate redeposition on the side walls. We have obtained single mode propagation with light overall losses of only 5 dB/cm.

  6. Hydrogen alpha laser ablation plasma diagnostics.

    PubMed

    Parigger, C G; Surmick, D M; Gautam, G; El Sherbini, A M

    2015-08-01

    Spectral measurements of the H(α) Balmer series line and the continuum radiation are applied to draw inferences of electron density, temperature, and the level of self-absorption in laser ablation of a solid ice target in ambient air. Electron densities of 17 to 3.2×10(24) m(-3) are determined from absolute calibrated emission coefficients for time delays of 100-650 ns after generation of laser plasma using Q-switched Nd:YAG radiation. The corresponding temperatures of 4.5-0.95 eV were evaluated from the absolute spectral radiance of the continuum at the longer wavelengths. The redshifted, Stark-broadened hydrogen alpha line emerges from the continuum radiation after a time delay of 300 ns. The electron densities inferred from power law formulas agree with the values obtained from the plasma emission coefficients. PMID:26258326

  7. Impact of etching kinetics on the roughening of thermal SiO{sub 2} and low-k dielectric coral films in fluorocarbon plasmas

    SciTech Connect

    Yin Yunpeng; Sawin, Herbert H.

    2007-07-15

    The impact of etching kinetics and etching chemistries on surface roughening was investigated by etching thermal silicon dioxide and low-k dielectric coral materials in C{sub 4}F{sub 8}/Ar plasma beams in an inductive coupled plasma beam reactor. The etching kinetics, especially the angular etching yield curves, were measured by changing the plasma pressure and the feed gas composition which influence the effective neutral-to-ion flux ratio during etching. At low neutral-to-ion flux ratios, the angular etching yield curves are sputteringlike, with a peak around 60 deg. -70 deg. off-normal angles; the surface at grazing ion incidence angles becomes roughened due to ion scattering related ion-channeling effects. At high neutral-to-ion flux ratios, ion enhanced etching dominates and surface roughening at grazing angles is mainly caused by the local fluorocarbon deposition induced micromasking mechanism. Interestingly, the etched surfaces at grazing angles remain smooth for both films at intermediate neutral-to-ion flux ratio regime. Furthermore, the oxygen addition broadens the region over which the etching without roughening can be performed.

  8. Fluid-Plasma Coupling in Hydrogen Flames

    NASA Astrophysics Data System (ADS)

    Massa, Luca; Retter, Jonathan; Glumac, Nick; Elliot, Gregg; Freund, Jonathan

    2015-11-01

    Recent experiments show that hydrogen diffusion flames at low Reynolds number can be markedly affected by a dielectric barrier discharge (DBD) plasma. The flame surface deforms and flattens, and light emissions increase. We develop a simulation model to analyze the mechanisms that causes these changes, and apply it to numerical calculations of axisymmetric flames with co-annular DBD, matching the corresponding experiments. Body forces due to charge sheaths are found to be the main mechanism, with radicals produced by plasma excitation playing a secondary role for the present conditions. The non-actuated flame flickers at approximately 10 Hz, in good agreement with the experiments. As the DBD voltage is increased, the flame flattens and oscillations decrease, eventually ceasing above a threshold value. The fully flattened case has a stoichiometric surface lying flat across the fuel orifice, with flame temperature exceeding significantly the adiabatic flame value. A force based on a linearized plasma sheath model, calibrated against air experiments, reproduces the main features of the experiments and provides a good estimate for the threshold flattening potential. In faster flowing regimes, radical production by the plasma becomes more important.

  9. Negative ion extraction from hydrogen plasma bulk

    SciTech Connect

    Oudini, N.; Taccogna, F.; Minelli, P.

    2013-10-15

    A two-dimensional particle-in-cell/Monte Carlo collision model has been developed and used to study low electronegative magnetized hydrogen plasma. A configuration characterized by four electrodes is used: the left electrode is biased at V{sub l} = −100 V, the right electrode is grounded, while the upper and lower transversal electrodes are biased at an intermediate voltage V{sub ud} between 0 and −100 V. A constant and homogeneous magnetic field is applied parallel to the lateral (left/right) electrodes. It is shown that in the magnetized case, the bulk plasma potential is close to the transversal electrodes bias inducing then a reversed sheath in front of the right electrode. The potential drop within the reversed sheath is controlled by the transversal electrodes bias allowing extraction of negative ions with a significant reduction of co-extracted electron current. Furthermore, introducing plasma electrodes, between the transversal electrodes and the right electrode, biased with a voltage just above the plasma bulk potential, increases the negative ion extracted current and decreases significantly the co-extracted electron current. The physical mechanism on basis of this phenomenon has been discussed.

  10. Etching of new phase change material Ti0.5Sb2Te3 by Cl2/Ar and CF4/Ar inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Zhang, Zhonghua; Song, Sannian; Song, Zhitang; Cheng, Yan; Zhu, Min; Li, Xiaoyun; Zhu, Yueqin; Guo, Xiaohui; Yin, Weijun; Wu, Liangcai; Liu, Bo; Feng, Songlin; Zhou, Dong

    2014-08-01

    The etching characteristics of new phase change material Ti0.5Sb2Te3 (TST) were studied with the Cl2/Ar or CF4/Ar gas mixture using inductively coupled plasmas system. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. Furthermore, X-ray photoelectron spectroscopy (XPS) compositional depth profiling was used to determine the surface degradation of etched TST using Cl2/Ar and CF4/Ar gas mixture. The etched TST shows a shift of the peaks related to Sb and Te to a higher energy for both etching gas, indicating the surface degradation of TST after etching. TST etched by Cl2 shows a thicker chloride layer remaining on the etched surface than fluorinate layer etched by CF4 owing to the higher reactivity. In the case of CF4, a thinner C-F polymer layer was observed on the etched surface, indicating lower etch rate due to the difficulty in making F diffusion into the TST through the C-F layer.

  11. Oxygen and nitrogen plasma etching of three-dimensional hydroxyapatite/chitosan scaffolds fabricated by additive manufacturing

    NASA Astrophysics Data System (ADS)

    Myung, Sung-Woon; Kim, Byung-Hoon

    2016-01-01

    Three-dimensional (3D) chitosan and hydroxyapatite (HAp)/chitosan (CH) scaffolds were fabricated by additive manufacturing, then their surfaces were etched with oxygen (O2) and nitrogen (N2) plasma. O2 and N2 plasma etching was performed to increase surface properties such as hydrophilicity, roughness, and surface chemistry on the scaffolds. After etching, hydroxyapatite was exposed on the surface of 3D HAp/CH scaffolds. The surface morphology and chemical properties were characterized by contact angle measurement, scanning electron microscopy, X-ray diffraction, and attenuated total reflection Fourier infrared spectroscopy. The cell viability of 3D chitosan scaffolds was examined by 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay. The differentiation of preosteoblast cells was evaluated by alkaline phosphatase assay. The cell viability was improved by O2 and N2 plasma etching of 3D chitosan scaffolds. The present fabrication process for 3D scaffolds might be applied to a potential tool for preparing biocompatible scaffolds.

  12. Effect of source frequency and pulsing on the SiO2 etching characteristics of dual-frequency capacitive coupled plasma

    NASA Astrophysics Data System (ADS)

    Kim, Hoe Jun; Jeon, Min Hwan; Mishra, Anurag Kumar; Kim, In Jun; Sin, Tae Ho; Yeom, Geun Young

    2015-01-01

    A SiO2 layer masked with an amorphous carbon layer (ACL) has been etched in an Ar/C4F8 gas mixture with dual frequency capacitively coupled plasmas under variable frequency (13.56-60 MHz)/pulsed rf source power and 2 MHz continuous wave (CW) rf bias power, the effects of the frequency and pulsing of the source rf power on the SiO2 etch characteristics were investigated. By pulsing the rf power, an increased SiO2 etch selectivity was observed with decreasing SiO2 etch rate. However, when the rf power frequency was increased, not only a higher SiO2 etch rate but also higher SiO2 etch selectivity was observed for both CW and pulse modes. A higher CF2/F ratio and lower electron temperature were observed for both a higher source frequency mode and a pulsed plasma mode. Therefore, when the C 1s binding states of the etched SiO2 surfaces were investigated using X-ray photoelectron spectroscopy (XPS), the increase of C-Fx bonding on the SiO2 surface was observed for a higher source frequency operation similar to a pulsed plasma condition indicating the increase of SiO2 etch selectivity over the ACL. The increase of the SiO2 etch rate with increasing etch selectivity for the higher source frequency operation appears to be related to the increase of the total plasma density with increasing CF2/F ratio in the plasma. The SiO2 etch profile was also improved not only by using the pulsed plasma but also by increasing the source frequency.

  13. Effect of temperature on layer separation by plasma hydrogenation

    SciTech Connect

    Di, Z. F.; Wang, Y. Q.; Nastasi, M.; Rossi, F.; Shao, L.; Thompson, P. E.

    2008-12-22

    We have studied hydrogen diffusion in plasma hydrogenated Si/SiGe/Si heterostructure at different temperatures. At low temperature, intrinsic point defects in the molecular beam epitaxy grown Si capping layer are found to compete with the buried strain SiGe layer for hydrogen trapping. The interaction of hydrogen with point defects affects the hydrogen long-range diffusion, and restricts the amount of hydrogen available for trapping by the SiGe layer. However, hydrogen trapping by the capping layer is attenuated with increasing hydrogenation temperature allowing more hydrogen to be trapped in the strain SiGe layer with subsequent surface blister formation. A potential temperature window for plasma hydrogenation induced layer separation is identified based on the combined considerations of trap-limited diffusion at low temperature and outdiffusion of H{sub 2} molecule together with the dissociation of Si-H bonds inside of H platelet at high temperature.

  14. Effect of temperature on layer separation by plasma-hydrogenation

    SciTech Connect

    Di, Zengfeng; Michael, Nastasi A; Wang, Yongqiang

    2008-01-01

    We have studied hydrogen diffusion in plasma hydrogenated Si/SiGe/Si heterostructure at different temperatures. At low temperature, intrinsic point defects in the molecular beam epitaxy grown Si capping layer are found to compete with the buried strain SiGe layer for hydrogen trapping. The interaction of hydrogen with point defects affects the hydrogen long-range diffusion, and restricts the amount of hydrogen available for trapping by the SiGe layer. However, hydrogen trapping by the capping layer is attenuated with increasing hydrogenation temperature allowing more hydrogen to be trapped in the strain SiGe layer with subsequent surface blister formation. A potential temperature window for plasma hydrogenation induced layer separation is identified based on the combined considerations of trap-limited diffusion at low temperature and outdiffusion of H{sub 2} molecule together with the dissociation of Si-H bonds inside of H platelet at high temperature.

  15. Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics

    SciTech Connect

    Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

    2002-10-01

    In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

  16. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

    1998-11-23

    A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

  17. Electron Recombination in a Dense Hydrogen Plasma

    SciTech Connect

    Jana, M.R.; Johnstone, C.; Kobilarcik, T.; Koizumi, G.M.; Moretti, A.; Popovic, M.; Tollestrup, A.V.; Yonehara, K.; Leonova, M.A.; Schwarz, T.A.; Chung, M.; /Unlisted /IIT, Chicago /Fermilab /MUONS Inc., Batavia /Turin Polytechnic

    2012-05-01

    A high pressure hydrogen gas filled RF cavity was subjected to an intense proton beam to study the evolution of the beam induced plasma inside the cavity. Varying beam intensities, gas pressures and electric fields were tested. Beam induced ionized electrons load the cavity, thereby decreasing the accelerating gradient. The extent and duration of this degradation has been measured. A model of the recombination between ionized electrons and ions is presented, with the intent of producing a baseline for the physics inside such a cavity used in a muon accelerator. Analysis of the data taken during the summer of 2011 shows that self recombination takes place in pure hydrogen gas. The decay of the number of electrons in the cavity once the beam is turned off indicates self recombination rather than attachment to electronegative dopants or impurities. The cross section of electron recombination grows for larger clusters of hydrogen and so at the equilibrium of electron production and recombination in the cavity, processes involving H{sub 5}{sup +} or larger clusters must be taking place. The measured recombination rates during this time match or exceed the analytic predicted values. The accelerating gradient in the cavity recovers fully in time for the next beam pulse of a muon collider. Exactly what the recombination rate is and how much the gradient degrades during the 60 ns muon collider beam pulse will be extrapolated from data taken during the spring of 2012.

  18. A new reactive atom plasma technology (RAPT) for precision machining: the etching of ULE optical surfaces

    NASA Astrophysics Data System (ADS)

    Fanara, Carlo; Shore, Paul; Nicholls, John R.; Lyford, Nicholas; Sommer, Phil; Fiske, Peter

    2006-06-01

    The next generation of 30-100 metre diameter extremely large telescopes (ELTs) requires large numbers of hexagonal primary mirror segments. As part of the Basic Technology programme run jointly by UCL and Cranfield University, a reactive atomic plasma technology (RAP(tm)) emerged from the US Lawrence Livermore National Laboratory (LLNL), is employed for the finishing of these surfaces. Results are presented on this novel etching technology. The Inductively Coupled Plasma (ICP) operated at atmospheric pressure using argon, activates the chemical species injected through its centre and promotes the fluorine-based chemical reactions at the surface. Process assessment trials on Ultra Low Expansion (ULE(tm)) plates, previously ground at high material removal rates, have been conducted. The quality of the surfaces produced on these samples using the RAP process are discussed. Substantial volumetric material removal rates of up to 0.446(21) mm 3/s at the highest process speed (1,200 mm/min) were found to be possible without pre-heating the substrate. The influences of power transfer, process speed and gas concentration on the removal rates have been determined. The suitability of the RAP process for revealing and removing sub-surface damage induced by high removal rate grinding is discussed. The results on SiC samples are reported elsewhere in this conference.

  19. Dependence of electric potentials at trench surfaces on ion angular distribution in plasma etching processes

    NASA Astrophysics Data System (ADS)

    Palov, A. P.; Mankelevich, Yu A.; Rakhimova, T. V.; Baklanov, M. R.

    2016-03-01

    Ion-stimulated etching of dielectrics in radio frequency plasma results in positive charging of a trench bottom because of the significant difference in the angular distribution functions of ions and electrons. They are anisotropic for ions and quasi-isotropic for electrons. The charging leads to a decrease in the energy of the ions bombarding the trench bottom and to undesirable sputtering of the walls near the trench bottom because of the curving of the ion trajectories. This process is normally investigated by Monte Carlo methods in the absence of experimental data. In this paper the analytical dependence of the ion flux bombarding the trench bottom on a trench aspect ratio and ion angular distribution function is obtained. Numerical calculations of the electric potential on the trench bottom for a set of trench aspect ratios and angles of the ion angular distribution function were performed based on a Monte Carlo method to demonstrate the ion flux and electric potential correlated well with each other. The proposed formula for an ion flux is suggested to be helpful for analyzing charging the trenches with different aspect ratios in plasma with an arbitrary angular ion distribution function.

  20. Roughening of Polyimide Surface for Inkjet Printing by Plasma Etching Using the Polyimide Masked with Polystyrene Nanosphere Array.

    PubMed

    Mun, Mu Kyeom; Park, Jin Woo; Ahn, Jin Ho; Kim, Ki Kang; Yeom, Geun Young

    2015-10-01

    Two key conditions are required for the application of fine-line inkjet printing onto a flexible substrate such as polyimide (PI): linewidth control during the inkjetting process, and a strong adhesion of the polyimide surface to the ink after the ink solidifies. In this study, the properties of a polyimide surface that was roughened through etching in a He/SF6 plasma, using a polystyrene nanosphere array as the etch mask, were investigated. The near-atmospheric-pressure plasma system of the He/SF6 plasma that was used exhibits two notable properties in this context: similar to an atmospheric-pressure plasma system, it can easily handle inline substrate processing; and, similar to a vacuum system, it can control the process gas environment. Through the use of plasma etching, the polyimide surface masked the 120-nm-diameter polystyrene nanospheres, thereby forming a roughened nanoscale polyimide surface. This surface exhibited not only a greater hydrophobicity--with a contact angle of about 150° for water and about 30° for silver ink, indicating better silver linewidth control during the silver inkjetting process--but also a stronger adhesion to the silver ink sprayed onto it when compared with the flat polyimide surface. PMID:26726483

  1. Electromigration study of copper lines on steps prepared by a plasma-based etch process

    SciTech Connect

    Lin, Chi-Chou; Kuo Yue

    2012-03-15

    The electromigration phenomenon of the copper line etched with a plasma-based process over the SiN{sub x} step has been investigated. Two important factors, i.e., the dielectric topography and the stress temperature, were examined using the accelerated isothermal electromigration method. The activation energy of 0.73 eV to 0.89 eV indicates two possible mass transport pathways: interfacial and copper surface diffusions. The copper line on the SiN{sub x} step has a shorter lifetime and a smaller activation energy than the copper line on the flat surface has. For the former, voids were formed at the cusp region and perpendicular to the current flow direction. For the latter, voids were formed in series and parallel to the current flow direction. The ''neck'' structure at the cusp region, which is a result of the inappropriate etching condition, further decreased the lifetime and the activation energy. The lifetime of the ''neck-free'' copper line over the SiN{sub x} step was estimated to be 7.1 x 10{sup 9} s under the high-speed IC operation condition. The thermal stress mismatch between the copper layer and TiW barrier layer as well as the underneath dielectric layer facilitated the void formation. The step effect on the lifetime was reduced when the test temperature was high because of the change of the local stress. In summary, the topography and the test temperature are critical factors for the copper line's lifetime.

  2. Quantum cascade laser based monitoring of CF{sub 2} radical concentration as a diagnostic tool of dielectric etching plasma processes

    SciTech Connect

    Hübner, M.; Lang, N.; Röpcke, J.; Helden, J. H. van; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.

    2015-01-19

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF{sub 2} radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF{sub 2} radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm{sup −1}. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν{sub 3} fundamental band of CF{sub 2} with the aid of an improved simulation of the line strengths. We found that the CF{sub 2} radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  3. Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring

    NASA Astrophysics Data System (ADS)

    Barzen, Lars; Kleinschmidt, Ann-Kathrin; Strassner, Johannes; Doering, Christoph; Fouckhardt, Henning; Bock, Wolfgang; Wahl, Michael; Kopnarski, Michael

    2015-12-01

    Reflectance anisotropy spectroscopy (RAS) can be used to monitor (reactive) ion etching (RIE) of semiconductor samples. We present results on the influence of the Cl2 content of the plasma gas on the RAS spectra during reactive ion etching. In a first step GaAs samples have been used and the RAS spectra are compared to results of secondary ion mass spectrometry (SIMS) on sample surfaces and depth profiles. In a second step a III-V semiconductor multilayer system has been investigated using the time-evolution of the average reflected intensity as an indication for the etch rate. In both cases usually even a high amount of Cl2 does not disturb the surface-sensitivity of the RAS signal.

  4. Plasma processing methods for hydrogen production

    NASA Astrophysics Data System (ADS)

    Mizeraczyk, Jerzy; Jasiński, Mariusz

    2016-08-01

    In the future a transfer from the fossil fuel-based economy to hydrogen-based economy is expected. Therefore the development of systems for efficient H2 production becomes important. The several conventional methods of mass-scale (or central) H2 production (methane, natural gas and higher hydrocarbons reforming, coal gasification reforming) are well developed and their costs of H2 production are acceptable. However, due to the H2 transport and storage problems the small-scale (distributed) technologies for H2 production are demanded. However, these new technologies have to meet the requirement of producing H2 at a production cost of (1-2)/kg(H2) (or 60 g(H2)/kWh) by 2020 (the U.S. Department of Energy's target). Recently several plasma methods have been proposed for the small-scale H2 production. The most promising plasmas for this purpose seems to be those generated by gliding, plasmatron and nozzle arcs, and microwave discharges. In this paper plasma methods proposed for H2 production are briefly described and critically evaluated from the view point of H2 production efficiency. The paper is aiming at answering a question if any plasma method for the small-scale H2 production approaches such challenges as the production energy yield of 60 g(H2)/kWh, high production rate, high reliability and low investment cost. Contribution to the topical issue "6th Central European Symposium on Plasma Chemistry (CESPC-6)", edited by Nicolas Gherardi, Ester Marotta and Cristina Paradisi

  5. Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

    NASA Astrophysics Data System (ADS)

    Chen, P.-C.; Lin, P.-T.; Mikolas, D. G.; Tsai, Y.-W.; Wang, Y.-L.; Fu, C.-C.; Chang, S.-L.

    2015-01-01

    To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.

  6. Optimization of an electron cyclotron resonance plasma etch process for n{sup +} polysilicon: HBr process chemistry

    SciTech Connect

    Tipton, G.D.; Blain, M.G.; Westerfield, P.L.; Trutna, L.S.; Maxwell, K.L.

    1993-08-01

    Designed experiments were employed to characterize a process for etching phosphorus doped polycrystalline silicon with HBr in a close-coupled ECR plasma reactor configured for 200 mm wafers. A fractional factorial screening experiment was employed to determine the principal input factors and the main etch effects. Linear models of the process responses indicate RF power, O{sub 2} flow rate, and the position of the resonance zone (with respect to the wafer) as the three strongest factors influencing process performance. Response surfaces generated using data from a follow-on response surface methodology (RSM) experiment predicted an optimum operating region characterized by relatively low RF power, a small O{sub 2} flow, and a resonance zone position close to the wafer. The optimized process demonstrated a polysilicon etch rate of 270 nm/min, an etch rate non-uniformity of 2.2% (1s), an etch selectivity to oxide greater than 100:1, and anisotropic profiles. Particle test results for the optimized process indicated that careful selection of the O{sub 2} fraction is required to avoid polymer deposition and particle formation.

  7. Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases

    SciTech Connect

    Rawal, Dipendra Singh Arora, Henika; Sehgal, Bhupender Kumar; Muralidharan, Rangarajan

    2014-05-15

    GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2 μm/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

  8. Etch mechanism of In{sub 2}O{sub 3} and SnO{sub 2} thin films in HBr-based inductively coupled plasmas

    SciTech Connect

    Kwon, Kwang-Ho; Efremov, Alexander; Kim, Moonkeun; Min, Nam Ki; Jeong, Jaehwa; Hong, MunPyo; Kim, Kwangsoo

    2010-03-15

    The investigations of etch characteristics and mechanisms for both In{sub 2}O{sub 3} and SnO{sub 2} thin films in the HBr-based inductively coupled plasmas were carried out. The etch rates were measured as functions of gas mixing ratio (0%-100% Ar), input power (400-700 W), and gas pressure (4-10 mTorr) at fixed bias power (200 W) and gas flow rate [40 SCCM (SCCM denotes cubic centimeter per minute at STP)]. Plasma parameters and composition were determined using a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. The correlations between the behaviors of etch rates and fluxes of plasma active species allow one to infer both In{sub 2}O{sub 3} and SnO{sub 2} etch mechanisms as the transitional regime of ion-assisted chemical reaction, which is controlled by neutral and charged fluxes together.

  9. Diagnostics of expanding mesoplasmas originated from a miniaturized inductively coupled plasma and their application to Si etching

    NASA Astrophysics Data System (ADS)

    Chen, Qiang; Tsuchiya, Shoichi; Ichiki, Takanori

    2014-01-01

    A miniaturized inductively coupled plasma (m-ICP) was generated at atmospheric pressure and introduced into an expansion chamber at a reduced pressure ranging from 10 to 1000 Pa to produce expanded mesoplasmas. The fundamental parameters of the m-ICP and the downstream mesoplasma were investigated by optical emission spectroscopy and Langmuir probe measurement. When the m-ICP entered the expansion chamber, it diffused into the surrounding area and the electron density decreased from 1013 to 109-1010 cm-3. Furthermore, Si etching in mesoplasmas was performed by adding SF6 to Ar plasmas. By changing the gas pressure, anisotropic etching with a vertical-to-horizontal etch rate ratio of 2.5 was achieved at 60 Pa with a vertical etch rate of 2.7 µm/min. In addition, the anisotropy was improved to 8 by introducing 10 sccm H2 into the Ar/SF6, which is ascribed to the reduction of sidewall undercutting resulting from the scavenging effect of fluorine atoms by atomic H.

  10. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    SciTech Connect

    Bouchoule, Sophie Cambril, Edmond; Guilet, Stephane; Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  11. Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas

    NASA Astrophysics Data System (ADS)

    Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2011-08-01

    Addition of oxygen to Cl2 discharge is widely used in Si etching for the fabrication of gate electrodes and shallow trench isolation. As the control of etching processes becomes more critical, a deeper understanding of plasma-surface interactions is required for the formation of roughened surfaces during etching. In particular, a small amount of O2 often leads to profile anomalies such as residues, micropillars, and roughened surfaces. In this study, we focus on the mechanism underlying local surface oxidation during Si etching in Cl2/O2 plasmas, and analyze the relationship between local surface oxidation and surface roughness on the nanometer scale, by a classical molecular dynamics (MD) simulation. The numerical results indicated that O radicals tend to break Si-Si bonds and distort the Si lattice structure; thus, nanometer-scale micromasks tend to be formed on convex roughened surfaces, owing to the reactivity of O radicals with substrate Si atoms and Cl atoms. The results also imply that the nanometer-scale micromasks significantly affect the formation of roughened surfaces and evolution of micropillars.

  12. Feasibility study of monitoring of plasma etching chamber conditions using superimposed high-frequency signals on rf power transmission line.

    PubMed

    Kasashima, Y; Uesugi, F

    2015-10-01

    An in situ monitoring system that can detect changes in the conditions of a plasma etching chamber has been developed. In the system, low-intensity high-frequency signals are superimposed on the rf power transmission line used for generating plasma. The system measures reflected high-frequency signals and detects the change in their frequency characteristics. The results indicate that the system detects the changes in the conditions in etching chambers caused by the changes in the electrode gap and the inner wall condition and demonstrate the effectiveness of the system. The system can easily be retrofitted to mass-production equipment and it can be used with or without plasma discharge. Therefore, our system is suitable for in situ monitoring of mass-production plasma etching chambers. The system is expected to contribute to development of predictive maintenance, which monitors films deposited on the inner wall of the chamber and prevents equipment faults caused by misalignment of chamber parts in mass-production equipment. PMID:26520984

  13. Rapid, Nonmechanical, Damage-Free Figuring Of Optical Surfaces Using Plasma-Assisted Chemical Etching (PACE): Part I Experimental Results

    NASA Astrophysics Data System (ADS)

    Bollinger, L. D.; Zarowin, Charles B.

    1989-01-01

    We present experimental results of an ongoing investigation demonstrating that Plasma Assisted Chemical Etching (PACE) can rapidly and controllably figure and smooth optical surfaces without mechanical contact; thus, removing the constraints on the design of optical elements imposed by mechanical processes, and, allowing higher quality optical surfaces. This process employs a plasma etch process originally developed to pattern micro-electronic circuits by etching through a relatively non-erodable lithographically patterned mask. The PACE process shapes the optical surface by removing material in a small area under a confined reactive gas plasma moved over the surface. Rates of removal as high as 10 m per minute are obtainable with accurate control. The removal footprint can be varied during the process. PACE inherently smooths or polishes while removing material, exposing a virgin surface free of process generated contamination and subsurface damage. Although other materials can also be figured by a PACE process, for this study, apparatus and processes were developed to explore the figuring of fused silica. Results will be shown demonstrating: repeatability and control of removal rate and footprint; predictability of material removal with plasma "tool" motion; and smoothing.

  14. Characterization of hydrogen environment anisotropic thermal etching and application to GaN nanostructure fabrication

    NASA Astrophysics Data System (ADS)

    Kita, Ryo; Hachiya, Ryo; Mizutani, Tomoya; Furuhashi, Hiroki; Kikuchi, Akihiko

    2015-04-01

    We report a new GaN etching technique with high anisotropy involving a thermal decomposition reaction in a low-pressure H2 environment. A GaN microridge stripe structure (5 µm in width and 1.2 µm in height) with extremely smooth sidewalls was fabricated at 1,050 °C and a H2 pressure of 10 Pa for 15 min using a SiO2 mask. The activation energy of the vertical etching was calculated to be 62-77 kcal/mol. In the GaN nanoridge stripe structure, the side etching under the SiO2 mask was less than 5 nm in depth and showed top width and height of ˜40 and ˜180 nm, respectively. The sidewall was extremely smooth and tilted by ˜15° from the m-plane along the a-axis, while being slightly rough and tilted by ˜30° from the a-plane along the m-axis. The \\{ n\\bar{n}02\\} (n = 4,5,6,7) planes were relatively stable in this etching technique.

  15. Hydrogen transport through stainless steel under plasma irradiation

    NASA Astrophysics Data System (ADS)

    Airapetov, A. A.; Begrambekov, L. B.; Kaplevsky, A. S.; Sadovskiy, Ya A.

    2016-01-01

    The paper presents the results of investigation of gas exchange through stainless steel surface of the plasma chamber under irradiation with hydrogen atoms in oxygen atmosphere or oxygen contaminated hydrogen plasma. Dependence of this process on various irradiation parameters, such as the metal temperature, energy of irradiating ions, gas composition of plasma are studied. It is shown, that desorption from stainless steel is activated with the increase of the plasma chamber walls temperature and energy of irradiating ions. Hydrogen release occurs also under irradiation of the walls by helium and argon plasmas added with oxygen, however the amount of released hydrogen is several times lower than in the case of irradiation with oxygen contaminated deuterium plasma.

  16. Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges

    SciTech Connect

    WOODWORTH,JOSEPH R.; RILEY,MERLE E.; AMATUCCI,VINCENT A.; HAMILTON,THOMAS W.; ARAGON,BEN P.

    2000-05-01

    In this paper, the authors report the absolute intensities of ultraviolet light between 4.9 eV and 24 eV ( 250 nm to 50 mn ) striking a silicon wafer in a number of oxide-etch processing discharges. The emphasis is on photons with energies greater than 8.8 eV, which have enough energy to damage SiO{sub 2}. These discharges were in an inductively-driven Gaseous Electronics Conference reference cell which had been modified to more closely resemble commercial etching tools. Comparisons of measurements made through a side port in the cell and through a hole in the wafer indicate that the VUV light in these discharges is strongly trapped. For the pure halocarbon gases examined in these experiments (C{sub 2}F{sub 6}, CHF{sub 3}, C{sub 4}F{sub 8}), the fluxes of VUV photons to the wafer varied from 1 x 10{sup 15} to 3 x 10{sup 15} photons/cm{sup 2} sec or equivalently from 1.5 to 5 mW/cm{sup 2}. These measurements imply that 0.1% to 0.3% of the rf source power to these discharges ends up hitting the wafer as VUV photons for the typical 20 mT, 200 W rf discharges. For typical ashing discharges containing pure oxygen, the VUV intensities are slightly higher--about 8 mW/cm{sup 2} . As argon or hydrogen diluents are added to the fluorocarbon gases, the VUV intensities increase dramatically, with a 10/10/10 mixture of Ar/C{sub 2}F{sub 6}/H{sub 2} yielding VUV fluxes on the wafer 26 mW/cm{sup 2} and pure argon discharges yielding 52 mW/cm{sup 2} . Adding an rf bias to the wafer had only a small effect on the VUV observed through a side-port of the GEC cell.

  17. Electrochemical characteristics of plasma-etched black silicon as anodes for Li-ion batteries

    SciTech Connect

    Lee, Gibaek; Wehrspohn, Ralf B.; Schweizer, Stefan L.

    2014-11-01

    Nanostructured silicon as an anode material for Li-ion batteries is produced for the first time by inductively coupled plasma–plasma etching of Si wafers in the black silicon regime. The microscopic structure strongly resembles other types of nanostructured silicon, with a well-arranged nanostructure possessing a sufficient porosity for accommodating large volume expansion. Despite these features, however, a high first-cycle irreversible capacity loss and a poor cycle life are observed. The main reason for these poor features is the formation of a thick solid-electrolyte interphase (SEI) layer related to the surface condition of the pristine nanostructured black silicon (b-Si) electrode. Therefore, the cycle life of the b-Si electrode is heavily influenced by the constant reformation of the SEI layer depending upon the surface composition in spite of the presence of nanostructured Si. In the fast lithiation experiments, the nanostructure region of the b-Si electrode is detached from the Si substrate owing to the kinetics difference between the lithium ion diffusion and the electron injection and phase transformation in the nanostructured Si region. This means that more Si substrate is involved in lithiation at high current rates. It is therefore important to maintain balance in the chemical kinetics during the lithiation of nanostructured Si electrodes with a Si substrate.

  18. Plasma Boosted Hydrogen Generation for Vehicle Pollution Reduction

    NASA Astrophysics Data System (ADS)

    Cohn, Daniel R.

    1999-11-01

    Plasma boosted hydrogen generators could improve the environmental quality of vehicles onboard production of hydrogen. (Bromberg,L, Cohn DR, Rabinovich A, Surma JE, Virden J, Compact plasmatron boosted hydrogen generation for vehicular applications. Int J Hydrogen Energy 1999;24) Plasma based devices can provide a rapid response and compact means of converting a wide range of fuels into hydrogen-rich gas. Spark ignition engine operation could facilitate an order of magnitude reduction in Nox generation during the entire driving cycle. Hydrogen-rich gas might also be employed to reduce pollution in Diesel engine vehicles. There also may be applications to fuel cell and turbine vehicles. In addition, plasma boosted hydrogen generation might be employed to facilitate the use of biomass derived oils by onboard conversion into hydrogen-rich gas. Use of biomass derived oils could lead to a net reduction in CO2 production. Plasma based devices facilitate hydrogen production from partial oxidation of hydrocarbon fuels by providing additional enthalpy, reactive species and mixing. Experimental studies of hydrogen production from compact plasma based devices will be discussed.

  19. Synergistic Effect of Atmospheric Pressure Plasma Pre-Treatment on Alkaline Etching of Polyethylene Terephthalate Fabrics and Films

    NASA Astrophysics Data System (ADS)

    A. Elabid Amel, E.; Guo, Ying; Shi, Jianjun; Ding, Ke; Zhang, Jing

    2016-04-01

    Dyeing of PET materials by traditional methods presents several problems. Plasma technology has received enormous attention as a solution for the environmental problems related with textile surface modifications, and there has been a rapid development and commercialization of plasma technology over the past decade. In this work, the synergistic effect of atmospheric pressure plasma on alkaline etching and deep coloring of dyeing properties on polyethylene terephthalate (PET) fabrics and films was investigated. The topographical changes of the PET surface were investigated by atomic force microscopy (AFM) images, which revealed a smooth surface morphology of the untreated sample whereas a high surface roughness for the plasma and/or alkaline treated samples. The effects of atmospheric pressure plasma on alkaline etching of the structure and properties of PET were investigated by means of differential scanning calorimetry (DSC), the main objective of performing DSC was to investigate the effect of the plasma pre-treatment on the Tg and Tm. Using a tensile strength tester YG065H and following a standard procedure the maximum force and elongation at maximum force of PET materials was investigated. Oxygen and argon plasma pre-treatment was found to increase the PET fabric weight loss rate. The color strength of PET fabrics was increased by various plasma pre-treatment times. The penetration of plasma and alkaline reactive species deep into the PET structure results in better dyeability and leaves a significant effect on the K/S values of the plasma pre-treated PET. It indicated that plasma pre-treatment has a great synergistic effect with the alkaline treatment of PET.

  20. Measurement of the Ion Distribution Function in a Dual Frequency Plasma Etch Tool

    NASA Astrophysics Data System (ADS)

    Gekelman, Walter; Moore, Nathaniel; Pribyl, Patrick; Kushner, Mark

    2015-09-01

    The ion energy distribution function, (IEDF) was measured in detail in an industrial etch tool. The plasma was made with an ICP source (440 kHz, 500 W) and two independently controlled bias sources. The Si wafer was placed on a ceramic electrostatic chuck with an embedded capacitor plate. The first source ran at 2.2 MHz (600 Vpp and 2500 W) with a maximum sheath potential drop of 650 V or 2000V. The second source ran at 19 MHz with Vpp of 600 V. The principal diagnostic was Laser Induced Fluorescence on Argon using 611.49 nm light from a tunable dye laser with ions responding to Doppler shifted light. Using cylindrical lens combinations the laser light was transformed into a sheet 15 cm wide and 0.5 cm thick. The beam could be transverse or parallel to the normal of the wafer. The glowing ions (at 461 nm) were photographed by a CCD camera with 400 micron resolution. The laser was phase locked to the 2.2 MHz rf and the IDDF measured as a function of radial position, height above the wafer and at 8 phases. With Vpp = 600 V the highest energy ions observed were 500 eV, 1.2 mm above the wafer. These observations as well as the angular distribution agreed well with a computer simulation. In the dual frequency case when the potential of the wafer was most negative wrt the bulk plasma the IEDF structure 0.8 mm above the wafer was well fitted by 4 Gaussians. The ion flux to the wafer was far more uniform in the dual frequency case. This research supported by the NSF and DOE.

  1. Analysis of hydrogen plasma in MPCVD reactor

    NASA Astrophysics Data System (ADS)

    Shivkumar, Gayathri

    The aim of this work is to build a numerical model that can predict the plasma properties of hydrogen plasmas inside a Seki Technotron Corp. AX5200S MPCVD system so that it may be used to understand and optimize the conditions for the growth of carbon nanostructures. A 2D model of the system is used in the finite element high frequency Maxwell solver and heat trasfer solver in COMSOL Multiphysics, where the solvers are coupled with user defined functions to analyze the plasma. A simplified chemistry model is formulated in order to determine the electron temperature in the plasma. This is used in the UDFs which calculate the electron number density as well as electron temperature. A Boltzmann equation solver for electrons in weakly ionized gases under uniform electric fields, called BOLSIG+, is used to obtain certain input parameters required for these UDFs. The system is modeled for several reactor geometries at pressures of 10 Torr and 30 Torr and powers ranging from 300 W to 700 W. The variation of plasma characteristics with changes in input conditions is studied and the electric field, electron number density, electron temperature and gas temperature are seen to increase with increasing power. Electric field, electron number density and electron temperature decrease and gas temperature increases with increasing pressure. The modeling results are compared with experimental measurements and a good agreement is found after calibrating the parameter gamma in Funer's model to match experimental electron number densities. The gas temperature is seen to have a weak dependence on power and a strong dependence on gas pressure. On an average, the gas temperature at a point 5 mm above the center of the puck increases from about 1000 K at a pressure of 10 Torr to about 1500 K at 30 Torr. The inclusion of the pillar produces an increase in the maximum electron number density of approximately 50%; it is higher under some conditions. It increases the maximum electron

  2. Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon

    NASA Astrophysics Data System (ADS)

    Tinck, Stefan; Bogaerts, Annemie

    2016-06-01

    In this work, the role of vibrationally excited HBr (HBr(vib)) is computationally investigated for a HBr/He inductively coupled plasma applied for Si etching. It is found that at least 50% of all dissociations of HBr occur through HBr(vib). This additional dissociation pathway through HBr(vib) makes the plasma significantly more atomic. It also results in a slightly higher electron temperature (i.e. about 0.2 eV higher compared to simulation results where HBr(vib) is not included), as well as a higher gas temperature (i.e. about 50 K higher than without including HBr(vib)), due to the enhanced Franck–Condon heating through HBr(vib) dissociation, at the conditions investigated. Most importantly, the calculated etch rate with HBr(vib) included in the model is a factor 3 higher than in the case without HBr(vib), due to the higher fluxes of etching species (i.e. H and Br), while the chemical composition of the wafer surface shows no significant difference. Our calculations clearly show the importance of including HBr(vib) for accurate modeling of HBr-containing plasmas.

  3. The sub-micron hole array in sapphire produced by inductively-coupled plasma reactive ion etching.

    PubMed

    Shiao, Ming-Hua; Chang, Chun-Ming; Huang, Su-Wei; Lee, Chao-Te; Wu, Tzung-Chen; Hsueh, Wen-Jeng; Ma, Kung-Jeng; Chiang, Donyau

    2012-02-01

    The sub-micron hole array in a sapphire substrate was fabricated by using nanosphere lithography (NSL) combined with inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. Polystyrene nanospheres of about 600 nm diameter were self-assembled on c-plane sapphire substrates by the spin-coating method. The diameter of polystyrene nanosphere was modified by using oxygen plasma in ICP-RIE system. The size of nanosphere modified by oxygen plasma was varied from 550 to 450 nm with different etching times from 15 to 35 s. The chromium thin film of 100 nm thick was then deposited on the shrunk nanospheres on the substrate by electron-beam evaporation system. The honeycomb type chromium mask can be obtained on the sapphire substrate after the polystyrene nanospheres were removed. The substrate was further etched in two sets of chlorine/Argon and boron trichloride/Argon mixture gases at constant pressure of 50 mTorr in ICP-RIE processes. The 400 nm hole array in diameter can be successfully produced under suitable boron trichloride/Argon gas flow ratio. PMID:22630019

  4. Edge morphology evolution of graphene domains during chemical vapor deposition cooling revealed through hydrogen etching.

    PubMed

    Zhang, Haoran; Zhang, Yanhui; Zhang, Yaqian; Chen, Zhiying; Sui, Yanping; Ge, Xiaoming; Yu, Guanghui; Jin, Zhi; Liu, Xinyu

    2016-02-21

    During cooling, considerable changes such as wrinkle formation and edge passivation occur in graphene synthesized on the Cu substrate. Wrinkle formation is caused by the difference in the thermal expansion coefficients of graphene and its substrate. This work emphasizes the cooling-induced edge passivation. The graphene-edge passivation can limit the regrowth of graphene at the domain edge. Our work shows that silicon-containing particles tend to accumulate at the graphene edge, and the formation of these particles is related to cooling. Furthermore, a clear curvature can be observed at the graphene edge on the Cu substrate, indicating the sinking of the graphene edge into the Cu substrate. Both the sinking of the graphene edge and the accumulation of silicon-containing particles are responsible for edge passivation. In addition, two kinds of graphene edge morphologies are observed after etching, which were explained by different etching mechanisms that illustrate the changes of the graphene edge during cooling. PMID:26866950

  5. Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

    PubMed

    Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

    2016-05-01

    In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern. PMID:27483889

  6. Reaction-diffusion analysis for one-step plasma etching and bonding of microfluidic devices

    SciTech Connect

    Rosso, Michel; Steijn, Volkert van; Smet, Louis C. P. M. de; Sudhoelter, Ernst J. R.; Kreutzer, Michiel T.; Kleijn, Chris R.

    2011-04-25

    A self-similar reaction front develops in reactive ion etching when the ions penetrate channels of shallow height h. This relates to the patterning of microchannels using a single-step etching and bonding, as described by Rhee et al. [Lab Chip 5, 102 (2005)]. Experimentally, we report that the front location scales as x{sub f{approx}}ht{sup 1/2} and the width is time-invariant and scales as {delta}{approx}h. Mean-field reaction-diffusion theory and Knudsen diffusion give a semiquantitative understanding of these observations and allow optimization of etching times in relation to bonding requirements.

  7. Genotoxicity studies in semiconductor industry. 1. In vitro mutagenicity and genotoxicity studies of waste samples resulting from plasma etching

    SciTech Connect

    Braun, R.; Huettner, E.M.; Merten, H.; Raabe, F. )

    1993-07-01

    Solid waste samples taken from the etching reactor, the turbo pump, and the waste air system of a plasma etching technology line in semiconductor production were studied as to their genotoxic properties in a bacterial repair test, in the Ames/Salmonella microsome assay, in the SOS chromotest, in primary mouse hepatocytes, and in Chinese hamster V79 cell cultures. All three waste samples were found to be active by inducing of unscheduled DNA-synthesis in mouse hepatocytes in vitro. In the bacterial rec-type repair test with Proteus mirabilis, waste samples taken from the turbo pump and the vacuum pipe system were not genotoxic. The waste sample taken from the chlorine-mediated plasma reactor was clearly positive in the bacterial repair assay and in the SOS chromotest with Escherichia coli. Mutagenic activity was demonstrated for all samples in the presence and absence of S9 mix made from mouse liver homogenate. Again, highest mutagenic activity was recorded for the waste sample taken from the plasma reactor, while samples collected from the turbo pump and from the waste air system before dilution and liberation of the air were less mutagenic. For all samples chromosomal damage in V79 cells was not detected, indicating absence of clastogenic activity in vitro. Altogether, these results indicate generation of genotoxic and mutagenic products as a consequence of chlorine-mediated plasma etching in the microelectronics industry and the presence of genotoxins even in places distant from the plasma reactor. Occupational exposure can be expected both from the precipitated wastes and from chemicals reaching the environment with the air stream.

  8. Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films.

    PubMed

    Zhou, H P; Xu, M; Xu, S; Liu, L L; Liu, C X; Kwek, L C; Xu, L X

    2016-01-01

    Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based on high-density hydrogen plasma. A model integrating the three processes of hydrogen insertion, etching, and diffusion, which jointly determined the hydrogenation depth of the excess hydrogen into the treated micrometer thick a-Si:H, is proposed to elucidate the hydrogenation depth evolution and the crystallization mechanism. The effective temperature deduced from the hydrogen diffusion coefficient is far beyond the substrate temperature of 300 °C, which implies additional driving forces for crystallization, i.e., the chemical annealing/plasma heating and the high plasma sheath electric field. The features of LFICP (low-frequency inductively coupled plasma) and LFICP-grown a-Si:H are also briefly discussed to reveal the underlying mechanism of rapid crystallization at low temperatures. PMID:27600866

  9. Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films

    PubMed Central

    Zhou, H. P.; Xu, M.; Xu, S.; Liu, L. L.; Liu, C. X.; Kwek, L. C.; Xu, L. X.

    2016-01-01

    Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based on high-density hydrogen plasma. A model integrating the three processes of hydrogen insertion, etching, and diffusion, which jointly determined the hydrogenation depth of the excess hydrogen into the treated micrometer thick a-Si:H, is proposed to elucidate the hydrogenation depth evolution and the crystallization mechanism. The effective temperature deduced from the hydrogen diffusion coefficient is far beyond the substrate temperature of 300 °C, which implies additional driving forces for crystallization, i.e., the chemical annealing/plasma heating and the high plasma sheath electric field. The features of LFICP (low-frequency inductively coupled plasma) and LFICP-grown a-Si:H are also briefly discussed to reveal the underlying mechanism of rapid crystallization at low temperatures. PMID:27600866

  10. Edge morphology evolution of graphene domains during chemical vapor deposition cooling revealed through hydrogen etching

    NASA Astrophysics Data System (ADS)

    Zhang, Haoran; Zhang, Yanhui; Zhang, Yaqian; Chen, Zhiying; Sui, Yanping; Ge, Xiaoming; Yu, Guanghui; Jin, Zhi; Liu, Xinyu

    2016-02-01

    During cooling, considerable changes such as wrinkle formation and edge passivation occur in graphene synthesized on the Cu substrate. Wrinkle formation is caused by the difference in the thermal expansion coefficients of graphene and its substrate. This work emphasizes the cooling-induced edge passivation. The graphene-edge passivation can limit the regrowth of graphene at the domain edge. Our work shows that silicon-containing particles tend to accumulate at the graphene edge, and the formation of these particles is related to cooling. Furthermore, a clear curvature can be observed at the graphene edge on the Cu substrate, indicating the sinking of the graphene edge into the Cu substrate. Both the sinking of the graphene edge and the accumulation of silicon-containing particles are responsible for edge passivation. In addition, two kinds of graphene edge morphologies are observed after etching, which were explained by different etching mechanisms that illustrate the changes of the graphene edge during cooling.During cooling, considerable changes such as wrinkle formation and edge passivation occur in graphene synthesized on the Cu substrate. Wrinkle formation is caused by the difference in the thermal expansion coefficients of graphene and its substrate. This work emphasizes the cooling-induced edge passivation. The graphene-edge passivation can limit the regrowth of graphene at the domain edge. Our work shows that silicon-containing particles tend to accumulate at the graphene edge, and the formation of these particles is related to cooling. Furthermore, a clear curvature can be observed at the graphene edge on the Cu substrate, indicating the sinking of the graphene edge into the Cu substrate. Both the sinking of the graphene edge and the accumulation of silicon-containing particles are responsible for edge passivation. In addition, two kinds of graphene edge morphologies are observed after etching, which were explained by different etching mechanisms that

  11. Modification of surface energy, dry etching, and organic film removal using atmospheric-pressure pulsed-corona plasma

    SciTech Connect

    Yamamoto, Toshiaki; Newsome, J.R.; Ensor, D.S.

    1995-05-01

    A laboratory-scale atmospheric-pressure plasma reactor, using a nanosecond pulsed corona, was constructed to demonstrate potential applications ranging from modification of surface energy to removal of surface organic films. For surface modification studies, three different substrates were selected to evaluate the surface energies: bare aluminum, polyurethane, and silicon coated with photoresist. The critical surface energy for all materials studied significantly increased after the plasma treatment. The effects of gas composition and plasma treatment time were also investigated. Photoresist, ethylene glycol, and Micro surfactant were used as test organic films. The etching rate of a photoresist coating on silicon was 9 nm/min. Organic film removal using atmospheric pressure plasma technology was shown to be feasible.

  12. Hydrogen uptake into silicon from an ECR plasma

    SciTech Connect

    Wampler, W.R.; Barbour, J.C.

    1993-12-01

    The concentration of hydrogen in solution near the surface of silicon exposed to an electron cyclotron resonance (ECR) plasma was determined by measuring the flux of hydrogen permeating to subsurface microcavities. The energy and flux of hydrogen impinging onto the surface from the plasma was also measured. A model is described which predicts the concentration of hydrogen in solution from the energy and flux of the impinging hydrogen. The measured solution concentrations were {approximately}10{sup {minus}9} H/Si at 600{degrees}C and {approximately}10{sup {minus}8} H/Si at 400{degrees}C, in fairly good agreement with the model. The absence of accumulation of immobile hydrogen near the surface indicates that lattice defects, which strongly trap hydrogen, were not produced by the ECR plasma. This study establishes a connection between the properties of the ECR plasma and the concentration of hydrogen in silicon samples exposed to the plasma, which allows improved control over passivation of defects and dopants.

  13. Modeling of implantation and mixing damage during etching of SiO{sub 2} over Si in fluorocarbon plasmas

    SciTech Connect

    Wang Mingmei; Kushner, Mark J.

    2011-09-15

    Energetic ion bombardment during plasma etching of microelectronics devices is necessary to activate chemical process and define features through the ions' anisotropic trajectories. These energetic fluxes can also cause damage and mixing of the constituents of crystalline lattices. These properties are likely best modeled using molecular dynamics (MD) simulations. The computational expense of these techniques makes feature scale simulations difficult, and so motivates development of approximate methods that can be used to model full features. In this regard, an implantation and mixing model has been developed and implemented into a Monte Carlo feature profile model to simulate the mixing and damage to the underlying Si during high aspect ratio (HAR) etching of SiO{sub 2} trenches. Fluxes to the surface were provided by a reactor scale model. The feature scale model was validated by comparison to the mixing produced by Ar{sup +} bombardment of Si with and without F and CF fluxes as predicted by MD simulations. Scaling of mixing damage of underlying Si during HAR of SiO{sub 2} etching in Ar/C{sub 4}F{sub 8}/O{sub 2} plasmas for rf bias powers of 1-4 kW was investigated. The authors found that mixing damage at the bottom of HAR features, though increasing in magnitude with increasing ion energy, does not scale as dramatically as on flat surfaces. This is due to the reflection of ions off of sidewalls which moderate the ion energies.

  14. Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns.

    PubMed

    Lee, Junmyung; Efremov, Alexander; Yeom, Geun Young; Lim, Nomin; Kwon, Kwang-Ho

    2015-10-01

    An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0-50% at a constant Ar fraction of 50% resulted in slightly non-monotonic Si and SiO2 etching rates in CF4-rich plasmas and greatly decreasing etching rates in C4F8-rich plasmas. The zero-dimensional plasma model, Langmuir probe diagnostics, and optical emission spectroscopy provided information regarding the formation-decay kinetics for the plasma active species, along with their densities and fluxes. The model-based analysis of the etching kinetics indicated that the non-monotonic etching rates were caused not by the similar behavior of the fluorine atom density but rather by the opposite changes of the fluorine atom flux and ion energy flux. It was also determined that the great decrease in both the Si and SiO2 etching rates during the transition from the CF4/Ar to C4F8/Ar gas system was due to the deposition of the fluorocarbon polymer film. PMID:26726514

  15. Efficient design of experiments for complex response surfaces with application to etching uniformity in a plasma reactor

    NASA Astrophysics Data System (ADS)

    Tatavalli Mittadar, Nirmal

    Plasma etching uniformity across silicon wafers is of paramount importance in the semiconductor industry. The complexity of plasma etching, coupled with lack of instrumentation to provide real-time process information (that could be used for feedback control), necessitate that optimal conditions for uniform etching must be designed into the reactor and process recipe. This is often done empirically using standard design of experiments which, however, are very costly and time consuming. The objective of this study was to develop a general purpose efficient design strategy that requires a minimum number of experiments, and can handle complex constraints in the presence of uncertainties. Traditionally, Response Surface Methodology (RSM) is used in these applications to design experiments to determine the optimal value of decision variables or inputs. We demonstrated that standard RSM, when applied to the problem of plasma etching uniformity, has the following drawbacks (1) inefficient search due to process nonlinearities, (2) lack of converge to the optimum, and, (3) inability to handle complex inequality constraints. We developed a four-phase Efficient Design Strategy (EDS) based on the DACE paradigm (Design and Analysis of Computer Experiments) and Bayesian search algorithms. The four phases of EDS are: (1) exploration of the design space by maximizing information, (2) exploration of the design space for feasible points by maximizing probability of constraint satisfaction, (3) optimization of the objective and (4) constrained local search. We also designed novel algorithms to switch between the different phases. The choice of model parameters for DACE predictors is usually determined by the Maximum Likelihood Estimation (MLE) method. Depending on the dataset, MLE could result in unrealistic predictors that show a peak-and-dip behavior. To solve this problem we developed techniques to detect the presence of peak-and-dip behavior and a new scheme based on Maximum a

  16. Protein adsorption and cell adhesion on three-dimensional polycaprolactone scaffolds with respect to plasma modification by etching and deposition techniques

    NASA Astrophysics Data System (ADS)

    Myung, Sung Woon; Ko, Yeong Mu; Kim, Byung Hoon

    2014-11-01

    In this work, protein adsorption and cell adhesion on three-dimensional (3D) polycaprolactone (PCL) scaffolds treated by plasma etching and deposition were performed. The 3D PCL scaffold used as a substrate of a bone tissue was fabricated by recent rapid prototype techniques. To increase surface properties, such as hydrophilicity, roughness, and surface chemistry, through good protein adhesion on scaffolds, oxygen (O2) plasma etching and acrylic acid or allyamine plasma deposition were performed on the 3D PCL scaffolds. The O2 plasma etching induced the formation of random nanoporous structures on the roughened surfaces of the 3D PCL scaffolds. The plasma deposition with acrylic acid and allyamine induced the chemical modification for introducing a functional group. The protein adsorption increased on the O2 plasma-etched surface compared with an untreated 3D PCL scaffold. MC3T3-E1 cells adhered bioactively on the etched and deposited surface compared with the untreated surface. The present plasma modification might be sought as an effective technique for enhancing protein adsorption and cell adhesion.

  17. Modeling of Hydrogen Retention in Metallic Plasma Facing Components

    NASA Astrophysics Data System (ADS)

    Guterl, Jerome; Smirnov, R.

    2012-10-01

    The retention of hydrogen isotopes in the vacuum vessel of the ITER device is a critical plasma wall interaction issue for safety (tritium inventory) and operational reasons (hydrogen recycling). In particular, long-term retention of hydrogen have been observed both in the near-surface region and in the bulk of material in experiments reproducing ITER first wall conditions [1]. In this work, we present a modeling of the long-term hydrogen retention in a plasma exposed metallic walltaking into account processes both at the wall surface (material erosion, hydrogen adsorption, etc.) and in the bulk (hydrogen implantation, creation of trap sites, etc.). Using numerical simulations, the model is applied to analyze retention as a function of various parameters of the wall irradiated by hydrogen plasma for beryllium wall. Depth profiles of retained hydrogen for several ion energies as well as dependencies of retained hydrogen amount on wall temperature are obtained, showing good agreement with experimental data. The role of radiation-induced point-defects in the hydrogen retention as well as other aspects of retention are discussed in application to ITER conditions. [4pt] [1] R.A. Anderl, et al., J. Nucl. Mater. 273 (1999) 1

  18. SiN etching characteristics of Ar/CH3F/O2 plasma and dependence on SiN film density

    NASA Astrophysics Data System (ADS)

    Ohtake, Hiroto; Wanifuchi, Tomiko; Sasaki, Masaru

    2016-08-01

    We evaluated the silicon nitride (SiN) etching characteristics of Ar/O2/hydrofluorocarbon plasma. Ar/CH3F/O2 plasma achieved a high etching selectivity of SiN to SiO2 by increasing the oxygen flow rate. We also evaluated the dependence of SiN etching characteristics on SiN film density. A low-density film deposited at a low temperature of 200 °C (by plasma-enhanced CVD, PECVD) showed an 8–20% lower etching rate of SiN than a high-density film deposited at a high temperature of 780 °C (by low-pressure CVD, LPCVD) when we had a low RF bias of 30 W. This PECVD film might move the competitive balance to oxidation from fluorination, reducing the SiN etching rate. However, when we have a high RF bias of more than 50 W, the SiN etching rate is 2–15% higher in the PECVD film than in the LPCVD film. The etching rate of SiN at various densities depends on the balance between oxidation and ion bombardment.

  19. EED f and IED f of the non-ambipolar e--beam plasma and their effects on etch

    NASA Astrophysics Data System (ADS)

    Chen, Lee

    2014-10-01

    The control of electron shading is crucial in achieving the super-high aspect ratio contact (HARC); precise ion-energy control is essential in the selective etching of lamella diblock copolymers to develop the nano-lines for Direct Self Assembly (DSA). The plasma EED f not only determines the chemistry but also dictates the shading level of the features. The above processes are presented as examples to illustrate the effects of EED f and the surgical surface-excitation by a controlled IED f. In addition to demonstrating the methods of achieving a prescribed IED f through external bias, the properties of the non-ambipolar electron plasma (NEP) will be presented. NEP is heated by the non-ambipolar beam-current density in the range of 10s Acm-2 through beam-plasma instabilities. Its EED f has a Maxwellian bulk followed by a broad energy-continuum connecting to the most energetic group with energies above the beam-energy and such EED f seems consistent with that required for deep-contact etching. The remnant of the injected electron-beam power terminates at the NEP end-boundary (i.e., wafer) could set up a controllable DC sheath potential resulting in mono-energetic surface excitation by the charge-neutral plasma beam without the application of external bias. In collaboration with Zhiying Chen, Tokyo Electron America, Inc., Austin, TX 78741.

  20. Effect of argon addition on plasma parameters and dust charging in hydrogen plasma

    SciTech Connect

    Kakati, B. Kausik, S. S.; Saikia, B. K.; Bandyopadhyay, M.; Saxena, Y. C.

    2014-10-28

    Experimental results on effect of adding argon gas to hydrogen plasma in a multi-cusp dusty plasma device are reported. Addition of argon modifies plasma density, electron temperature, degree of hydrogen dissociation, dust current as well as dust charge. From the dust charging profile, it is observed that the dust current and dust charge decrease significantly up to 40% addition of argon flow rate in hydrogen plasma. But beyond 40% of argon flow rate, the changes in dust current and dust charge are insignificant. Results show that the addition of argon to hydrogen plasma in a dusty plasma device can be used as a tool to control the dust charging in a low pressure dusty plasma.

  1. Microwave plasma generation of hydrogen atoms for rocket propulsion

    NASA Technical Reports Server (NTRS)

    Chapman, R.; Filpus, J.; Morin, T.; Snellenberger, R.; Asmussen, J.; Hawley, M.; Kerber, R.

    1981-01-01

    A flow microwave plasma reaction system is used to study the conversion of hydrogen to hydrogen atoms as a function of pressure, power density, cavity tuning, cavity mode, and time in the plasma zone. Hydrogen atom concentration is measured down-stream from the plasma by NOCl titration. Extensive modeling of the plasma and recombination zones is performed with the plasma zone treated as a backmix reaction system and the recombination zone treated as a plug flow. The thermodynamics and kinetics of the recombination process are examined in detail to provide an understanding of the conversion of recombination energy to gas kinetic energy. It is found that cavity tuning, discharge stability, and optimum power coupling are critically dependent on the system pressure, but nearly independent of the flow rate.

  2. Modelling spectral properties of non-equilibrium atomic hydrogen plasma

    NASA Astrophysics Data System (ADS)

    D'Ammando, G.; Pietanza, L. D.; Colonna, G.; Longo, S.; Capitelli, M.

    2010-02-01

    A model to predict the emissivity and absorption coefficient of atomic hydrogen plasma is presented in detail. Non-equilibrium plasma is studied through coupling of the model with a collisional-radiative code for the excited states population as well as with the Boltzmann equation for the electron energy distribution function.

  3. Real-time control of ion density and ion energy in chlorine inductively coupled plasma etch processing

    NASA Astrophysics Data System (ADS)

    Chang, Cheng-Hung; Leou, Keh-Chyang; Lin, Chaung; Lin, Tsan-Lang; Tseng, Chih-Wei; Tsai, Chuen-Horng

    2003-07-01

    In this study, we have experimentally demonstrated the real-time closed-loop control of both ion density and ion energy in a chlorine inductively coupled plasma etcher. To measure positive ion density, the trace rare gases-optical emission spectroscopy is used to measure the chlorine positive ion density. An rf voltage probe is adopted to measure the root-mean-square rf voltage on the electrostatic chuck which is linearly dependent on sheath voltage. One actuator is a 13.56 MHz rf generator to drive the inductive coil seated on a ceramic window. The second actuator is also a 13.56 MHz rf generator to power the electrostatic chuck. The closed-loop controller is designed to compensate for process drift, process disturbance, and pilot wafer effect and to minimize steady-state error of plasma parameters. This controller has been used to control the etch process of unpatterned polysilicon. The experimental results showed that the closed-loop control had a better repeatability of plasma parameters compared with open-loop control. The closed-loop control can eliminate the process disturbance resulting from reflected power. In addition, experimental results also demonstrated that closed-loop control has a better reproducibility in etch rate as compared with open-loop control.

  4. Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

    NASA Astrophysics Data System (ADS)

    Miyawaki, Yudai; Shibata, Emi; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Okamoto, Hidekazu; Sekine, Makoto; Hori, Masaru

    2013-02-01

    The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C5F10O plasma etching in dual-frequency (60 MHz/2 MHz)-excited parallel plate capacitively coupled plasma. Previously, perfluoropropyl vinyl ether [C5F10O] provided a very high density of CF3+ ions [Nagai et al.: Jpn. J. Appl. Phys. 45 (2006) 7100]. Surface nitridation on the p-SiOCH surface exposed to Ar/N2 plasma led to the etching of larger amounts of p-SiOCH in Ar/C5F10O plasma, which depended on the formation of bonds such as =C(sp2)=N(sp2)- and -C(sp)≡N(sp).

  5. A Multi-Scale Study on Silicon-Oxide Etching Processes in C4F8/Ar Plasmas

    NASA Astrophysics Data System (ADS)

    Sui, Jiaxing; Zhang, Saiqian; Liu, Zeng; Yan, Jun; Dai, Zhongling

    2016-06-01

    A multi-scale numerical method coupled with the reactor, sheath and trench model is constructed to simulate dry etching of SiO2 in inductively coupled C4F8 plasmas. Firstly, ion and neutral particle densities in the reactor are decided using the CFD-ACE+ commercial software. Then, the ion energy and angular distributions (IEDs and IADs) are obtained in the sheath model with the sheath boundary conditions provided with CFD-ACE+. Finally, the trench profile evolution is simulated in the trench model. What we principally focus on is the effects of the discharge parameters on the etching results. It is found that the discharge parameters, including discharge pressure, radio-frequency (rf) power, gas mixture ratios, bias voltage and frequency, have synergistic effects on IEDs and IADs on the etched material surface, thus further affecting the trench profiles evolution. supported by National Natural Science Foundation of China (No. 11375040) and the Important National Science & Technology Specific Project of China (No. 2011ZX02403-002)

  6. Atomic layer etching of SiO2 under Ar/ C4F8 plasmas with pulsed bias

    NASA Astrophysics Data System (ADS)

    Zhang, Sai-Qian; Dai, Zhong-Ling; Wang, You-Nian; Plasma Simulation; Experiment Group (PSEG) Team

    2015-09-01

    The purge steps in the atomic layer etching (ALE) reduce the throughput and increase the costs. By elaborately choosing bias pulse waveforms, ALE can be achieved without alternating feedstock gas, although compromises are needed between throughput and precision. In this study, a multi-scale model is used to simulate ALE of SiO2 with a pulsed bias in Ar/C4F8 plasmas. Firstly, a commercial software CFD-ACE + is used to calculate the reactant fluxes towards the substrate in a CCP reactor. The ion bombardment energy and angular distributions at substrate are calculated with a hybrid sheath model, where electric field is got from fluid equations, and the ion-neutral collisions are considered applying the Monte Carlo(MC) method. Then, the reactant transport and surface MC reaction algorithm are coupled in a feature scale model. Influences of bias pulse frequency and duty ratio on atomic precision control are studied. Also, comparisons are made between conventional ALE and pulsed bias etching. Results show that when pulsed bias is used instead of alternating the feedstock gas, we can still achieve certain self-limiting nature in etching, with higher throughput and acceptable loss of precision. Supported by National Natural Science Foundation of China (No. 11375040).

  7. Investigation of InP etching mechanisms in a Cl{sub 2}/H{sub 2} inductively coupled plasma by optical emission spectroscopy

    SciTech Connect

    Gatilova, L.; Bouchoule, S.; Guilet, S.; Chabert, P.

    2009-03-15

    Optical emission spectroscopy (OES) has been used in order to investigate the InP etching mechanisms in a Cl{sub 2}-H{sub 2} inductively coupled plasma. The authors have previously shown that anisotropic etching of InP could be achieved for a H{sub 2} percentage in the 35%-45% range where the InP etch rate also presents a local maximum [J. Vac. Sci. Technol. B 24, 2381 (2006)], and that anisotropic etching was due to an enhanced passivation of the etched sidewalls by a silicon oxide layer [J. Vac. Sci. Technol. B 26, 666 (2008)]. In this work, it is shown that this etching behavior is related to a maximum in the H atom concentration in the plasma. The possible enhancement of the sidewall passivation process in the presence of H is investigated by comparing OES measurements and etching results obtained for Cl{sub 2}-H{sub 2} and Cl{sub 2}-Ar gas mixtures.

  8. Effect of Cl{sub 2}- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

    SciTech Connect

    Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

    2012-05-15

    A Cl{sub 2}-HBr-O{sub 2}/Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate ({approx}600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO{sub x} passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl{sub 2}-based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be {approx}1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl{sub 2}-based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl{sub 2}-based ICP etching for the recovery of the InP material.

  9. Hydrogen Generation from the Dissociation of Water Using Microwave Plasmas

    NASA Astrophysics Data System (ADS)

    Yong, Ho Jung; Soo Ouk, Jang; Hyun Jong, You

    2013-06-01

    Hydrogen is produced by direct dissociation of water vapor, i.e., splitting water molecules by the electrons in water plasma at low pressure (<10-50 Torr) using microwave plasma discharge. This condition generates a high electron temperature, which facilitates the direct dissociation of water molecules. A microwave plasma source is developed, utilizing the magnetron of a microwave oven and a TE10 rectangular waveguide. The quantity of the generated hydrogen is measured using a residual gas analyzer. The electron density and temperature are measured by a Langmuir probe, and the neutral temperature is calculated from the OH line intensity.

  10. Resonances in positron-hydrogen scattering in dense quantum plasmas

    SciTech Connect

    Jiang, Zishi; Zhang, Yong-Zhi; Kar, Sabyasachi

    2015-05-15

    We have investigated the S-wave resonance states in positron-hydrogen system embedded in dense quantum plasmas using Hylleraas-type wave functions within the framework of the stabilization method. The effect of quantum plasmas has been incorporated using the exponential-cosine-screened Coulomb (modified Yukawa-type) potential. Resonance parameters (both position and width) below the Ps n = 2 threshold are reported as functions of plasma screening parameters.

  11. Investigation of the etching mechanisms of Ar/Cl2/O2 inductively coupled plasmas on silicon by means of modelling and experiments

    NASA Astrophysics Data System (ADS)

    Tinck, Stefan

    2009-10-01

    In this topic, the etching behaviour of Cl2/O2/Ar inductively coupled plasmas on a silicon substrate, as used in shallow trench isolation for the production of electronic devices, is investigated by means of modelling and experiments. A hybrid plasma model is applied to calculate the plasma characteristics in the reactor chamber and two additional Monte Carlo simulations are performed to predict the fluxes, angles and energy of the plasma species bombarding the silicon substrate, as well as the resulting surface processes such as etching and deposition. Experimentally, it is found that when the fraction of oxygen in the gas mixture of the plasma is too high, the deposition of oxygen species becomes superior to the etching of silicon by chlorine species, resulting in an etch rate close to zero. In the surface simulations, special attention is paid to the potential distribution and the composition of the surface layers during etching or deposition to provide a better insight in these silicon surface processes.

  12. Effect of gas mixing ratio on etch behavior of ZrO{sub 2} thin films in Cl{sub 2}-based inductively coupled plasmas

    SciTech Connect

    Efremov, Alexander; Min, Nam-Ki; Yun, Sun Jin; Kwon, Kwang-Ho

    2008-11-15

    The analysis of the ZrO{sub 2} thin film etch mechanism in the Cl{sub 2}/Ar, Cl{sub 2}/He, and Cl{sub 2}/N{sub 2} inductively coupled plasmas was carried out. It was found that an increase in additive gas fraction at fixed gas pressure and input power results in increasing ZrO{sub 2} etch rate, which changes from 1.2 nm/min for pure Cl{sub 2} plasma up to 3.15, 2.40, and 2.31 nm/min for 80% Ar, N{sub 2}, and He, respectively. Langmuir probe diagnostics and zero-dimensional plasma modeling indicated that both plasma parameters and active species kinetics are noticeably influenced by the initial composition of the gas mixture. From the model-based analysis of etch kinetics, it was shown that, similarly to the case of BCl{sub 3}-based plasmas, the behavior of the ZrO{sub 2} etch rate corresponds to the ion-flux-limited etch regime.

  13. Etching characteristics and mechanism of Ge{sub 2}Sb{sub 2}Te{sub 5} thin films in inductively coupled Cl{sub 2}/Ar plasma

    SciTech Connect

    Min, Nam-Ki; Efremov, Alexander; Kim, Yun-Ho; Kim, Mansu; Park, Hyung-Ho; Lee, Hyun Woo; Kwon, Kwang-Ho

    2008-03-15

    This work reports the investigations of both etch characteristics and mechanisms for the Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) thin films in the Cl{sub 2}/Ar inductively coupled plasma. The GST etch rates and etch selectivities over SiO{sub 2} were measured as functions of the Cl{sub 2}/Ar mixing ratio (43%-86% Ar), gas pressure (4-10 mTorr), and source power (400-700 W). Langmuir probe diagnostics and zero-dimensional (global) plasma modeling provided the information on plasma parameters and behaviors of plasma active species. From the model-based analysis of surface kinetics, it was found that with variations of the Cl{sub 2}/Ar mixing ratio and gas pressure, the GST etch rate follows the changes of Cl atom density and flux but contradicts with those for positive ions. The GST etch mechanism in the Cl{sub 2}-containing plasmas represents a combination of spontaneous and ion-assisted chemical reactions with no limitation by ion-surface interaction kinetics such as physical sputtering of the main material or the ion-stimulated desorption of low volatile reaction products.

  14. Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application

    SciTech Connect

    Lee, J. H.; Kim, M. J.; Yoon, Y. S.

    2013-04-15

    The floating harmonic method was developed for in situ plasma diagnostics of allowing real time measurement of electron temperature (T{sub e}) and ion flux (J{sub ion}) without contamination of the probe from surface modification by reactive species. In this study, this novel non-invasive diagnostic system was studied to characterize inductively coupled plasma of reactive gases monitoring T{sub e} and J{sub ion} for investigating the optimum plasma etching conditions and controlling of the real-time plasma surface reaction in the range of 200-900 W source power, 10-100 W bias power, and 3-15 mTorr chamber pressure, respectively.

  15. Optical properties of high aspect ratio plasma etched silicon nanowires: fabrication-induced variability dramatically reduces reflectance

    NASA Astrophysics Data System (ADS)

    Smyrnakis, A.; Almpanis, E.; Constantoudis, V.; Papanikolaou, N.; Gogolides, E.

    2015-02-01

    In this work we investigate both experimentally and theoretically the optical properties of aligned, perpendicular to the substrate, high aspect ratio (AR), plasma etched Si nanowires (SiNWs) with controlled variability. We focus on the role of imperfections in fabrication, which manifest themselves as dimensional variability of SiNW, lattice defects or positional randomization. SiNW arrays are fabricated by e-beam lithography (perfectly ordered array) or colloidal particle self-assembly (quasi-ordered array) followed by cryogenic Si plasma etching, which offers fast etch rate (up to 3 μm min-1) combined with clean, smooth, and controllable sidewall profile, but induces some dimensional variability on the diameters of the SiNWs. Sub-200 nm diameter SiNWs having AR as high as 37:1 are demonstrated. The total reflectance of SiNWs is below 2% in a wide range of the optical spectrum. We experimentally demonstrate improved light absorption when moving from a perfectly ordered (after e-beam lithography) to a defective and quasi-ordered (after colloidal self-assembly) SiNW array. In addition our measured reflectivity (for both ordered and quasi-ordered SiNWs) is much lower compared to the one predicted theoretically for a perfect SiNWs array, using full-electrodynamic calculations with the layer-multiple-scattering method. To explain such low reflectivity, we model the influence of disorder using the average T-matrix approximation and show that even small dimensional variability (10-20%) leads to dramatic reduction of the reflectance (matching the experimental results) and increased light trapping inside the SiNW justifying their possible application in photovoltaic devices.

  16. Optical properties of high aspect ratio plasma etched silicon nanowires: fabrication-induced variability dramatically reduces reflectance.

    PubMed

    Smyrnakis, A; Almpanis, E; Constantoudis, V; Papanikolaou, N; Gogolides, E

    2015-02-27

    In this work we investigate both experimentally and theoretically the optical properties of aligned, perpendicular to the substrate, high aspect ratio (AR), plasma etched Si nanowires (SiNWs) with controlled variability. We focus on the role of imperfections in fabrication, which manifest themselves as dimensional variability of SiNW, lattice defects or positional randomization. SiNW arrays are fabricated by e-beam lithography (perfectly ordered array) or colloidal particle self-assembly (quasi-ordered array) followed by cryogenic Si plasma etching, which offers fast etch rate (up to 3 μm min(-1)) combined with clean, smooth, and controllable sidewall profile, but induces some dimensional variability on the diameters of the SiNWs. Sub-200 nm diameter SiNWs having AR as high as 37:1 are demonstrated. The total reflectance of SiNWs is below 2% in a wide range of the optical spectrum. We experimentally demonstrate improved light absorption when moving from a perfectly ordered (after e-beam lithography) to a defective and quasi-ordered (after colloidal self-assembly) SiNW array. In addition our measured reflectivity (for both ordered and quasi-ordered SiNWs) is much lower compared to the one predicted theoretically for a perfect SiNWs array, using full-electrodynamic calculations with the layer-multiple-scattering method. To explain such low reflectivity, we model the influence of disorder using the average T-matrix approximation and show that even small dimensional variability (10-20%) leads to dramatic reduction of the reflectance (matching the experimental results) and increased light trapping inside the SiNW justifying their possible application in photovoltaic devices. PMID:25648611

  17. An experimental study of laser supported hydrogen plasmas

    NASA Technical Reports Server (NTRS)

    Vanzandt, D. M.; Mccay, T. D.; Eskridge, R. H.

    1984-01-01

    The rudiments of a rocket thruster which receives its enthalpy from an energy source which is remotely beamed from a laser is described. An experimental study now partially complete is discussed which will eventually provide a detailed understanding of the physics for assessing the feasibility of using hydrogen plasmas for accepting and converting this energy to enthalpy. A plasma ignition scheme which uses a pulsed CO2 laser has been developed and the properties of the ignition spark documented, including breakdown intensities in hydrogen. A complete diagnostic system capable of determining plasma temperature and the plasma absorptivity for subsequent steady state absorption of a high power CO2 laser beam are developed and demonstrative use is discussed for the preliminary case study, a two atmosphere laser supported argon plasma.

  18. An interatomic potential model for molecular dynamics simulation of silicon etching by Br{sup +}-containing plasmas

    SciTech Connect

    Ohta, H.; Iwakawa, A.; Eriguchi, K.; Ono, K.

    2008-10-01

    An interatomic potential model for Si-Br systems has been developed for performing classical molecular dynamics (MD) simulations. This model enables us to simulate atomic-scale reaction dynamics during Si etching processes by Br{sup +}-containing plasmas such as HBr and Br{sub 2} plasmas, which are frequently utilized in state-of-the-art techniques for the fabrication of semiconductor devices. Our potential form is based on the well-known Stillinger-Weber potential function, and the model parameters were systematically determined from a database of potential energies obtained from ab initio quantum-chemical calculations using GAUSSIAN03. For parameter fitting, we propose an improved linear scheme that does not require any complicated nonlinear fitting as that in previous studies [H. Ohta and S. Hamaguchi, J. Chem. Phys. 115, 6679 (2001)]. In this paper, we present the potential derivation and simulation results of bombardment of a Si(100) surface using a monoenergetic Br{sup +} beam.

  19. High-energy negative ion beam obtained from pulsed inductively coupled plasma for charge-free etching process

    NASA Astrophysics Data System (ADS)

    Vozniy, O. V.; Yeom, G. Y.

    2009-06-01

    Negative ions in conventional inductively coupled plasma are often more chemically active than positive ions (for example, in CF4 or SF6 plasmas), but inconveniently they are trapped inside the sheath and cannot be used for high-energy surface etching in sources with a grid-type acceleration system. In this work we describe a method of positive and negative ion extraction that allows the energy and flux of oppositely charged particles to be varied independently. Then by scattering the ions off from a metal surface, it is possible to form a high-energy beam of neutrals from the negative ions by using the low-energy positive component of the beam current for better charge compensation.

  20. Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

    SciTech Connect

    Uchida, Saburo; Takashima, Seigo; Hori, Masaru; Fukasawa, Masanaga; Ohshima, Keiji; Nagahata, Kazunori; Tatsumi, Tetsuya

    2008-04-01

    Low dielectric constant (low-k) films have been widely used as insulating materials in ultra-large-scale integrated circuits. Low-k films receive heavy damage during the plasma processes of etching or ashing, resulting in an increase in their dielectric constant. In order to realize damage-free plasma processes for low-k films, it is essential to determine the influence of radiation, radicals, and ions emitted in the plasma process on the characteristics of low-k films. We have developed a technique to evaluate the influence of radiation, radicals, ions, and their synergies on films in real plasma processes and have named it pallet for plasma evaluation (PAPE). Using the PAPE, plasma-induced damage on porous SiOCH films were investigated in dual-frequency capacitively coupled H{sub 2}/N{sub 2} plasmas. The damage was characterized by ellipsometry, Fourier-transform infrared spectroscopy, and thermal desorption spectroscopy. On the basis of the results, the damage mechanisms associated with vacuum ultraviolet (VUV) and UV radiation, radicals, and ions were clarified. The damage was caused not only by ions and radicals but also by VUV and UV radiation emitted by the plasmas. Moreover, it was found that the synergy between the radiation and the radicals enhanced the damage.

  1. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    DOE PAGESBeta

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Othermore » critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

  2. Effects of hydrogen surface processes on hydrogen retention in plasma facing components

    NASA Astrophysics Data System (ADS)

    Guterl, Jerome; Smirnov, Roman; Krasheninnikov, Sergei

    2014-10-01

    Hydrogen retention and recycling on metallic plasma-facing components (PFCs) are among the key-issues for future fusion devices due to both safety and operational reasons. For tungsten, which has been chosen as divertor material in ITER, parameters of hydrogen desorption from Wsurfaces, experimentally measured for fusion-related conditions, show a large discrepancy. Indeed, various complex phenomena may affect hydrogen desorption (e.g atomic islands, roughness, surface reconstruction, impurities, ect). In this work, we investigate effects of hydrogen desorption from W surfaces on hydrogen retention in W material. Two regimes of hydrogen surface desorption (readsorption-limited and recombination-limited) can be identified and may affect the kinetic order of desorption. Within these desorption regimes, it is shown that release of hydrogen from W material in fusion-related conditions may be surface-limited at low temperature and diffusion-limited at high temperature. Analyses of hydrogen release regimes for thermodesorption experiments and plasma operations in fusion reactors show that surface processes may strongly affect retention and release of hydrogen from W material. In this context, effects of W surface coverage with oxygen on hydrogen desorption are discussed since high concentrations of oxygen on PFCs surfaces are expected in future fusion devices. This work is performed under the auspices of USDOE Grant No. DE-FG02-04ER54739 and the PSI Science Center Grant DE-SC0001999 at UCSD.

  3. Strength of plasma coating and effect of a plasma coating on hydrogen entry

    NASA Astrophysics Data System (ADS)

    Nishiguchi, Hiroshi; Ohshima, Tamiko; Kawasaki, Hiroharu; Fukuda, Takayuki

    2016-01-01

    The strength of a plasma coating and the effect of the plasma coating on hydrogen entry were investigated to establish a method that provides a base material with highly resistant to hydrogen entry and embrittlement. Aluminum alloy A6061, which is highly resistant to hydrogen gas atmosphere, was employed as the coating material (300 W, 17 h, ∼40 µm thickness). Two types of specimen prepared by the hydrogen-charging method were adopted: the coated and uncoated specimens were (1) immersed in 20 mass % ammonium thiocyanate aqueous solution at 313 K for 48 h, or (2) exposed to hydrogen gas atmosphere at 100 MPa and 270 °C for 200 h. Hydrogen content measurements revealed that the A6061 plasma coating is highly resistant to hydrogen entry in corrosive environments. The coating reduced hydrogen entry by ∼50% during exposure to hydrogen gas atmosphere at 100 MPa and 270 °C. Moreover, the plasma coating method was found to be applicable in the elastic deformation region of the base material.

  4. Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

    SciTech Connect

    King, Sean W. Tanaka, Satoru; Davis, Robert F.; Nemanich, Robert J.

    2015-09-15

    Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700–1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200–550 °C) as well as higher temperatures (>700 °C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ∼750 °C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C–O and

  5. In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO{sub 2}

    SciTech Connect

    Gerung, Henry; Brinker, C. Jeffrey; Brueck, Steven R.J.; Han, Sang M.

    2005-03-01

    We have employed attenuated total reflection Fourier transforms infrared spectroscopy (ATR-FTIRS) to monitor the profile evolution of patterned mesoporous, low-dielectric-constant SiO{sub 2} films in situ and in real time during plasma etching. A stack of patterned photoresist, anti-reflective coating, and mesoporous SiO{sub 2} is etched in an inductively coupled plasma reactor, using CHF{sub 3} and Ar. During etching, the IR absorbance of Si-O-Si stretching modes near 1080 cm{sup -1} decreases, and the rate of decrease in Si-O-Si absorbance translates to the SiO{sub 2} removal rate. When corrected for the exponentially decaying evanescent electric field, the removal rate helps monitor the profile evolution and predict the final etch profile. The predicted profiles are in excellent agreement with the cross-sectional images taken by scanning electron microscopy. In a similar approach, we calculate the absolute total number of C-F bonds in the sidewall passivation and observe its formation rate as a function of time. Assuming that the thickness of the sidewall passivation tapers down towards the trench bottom, we deduce that C-F formation occurs mostly in the final stage of etching when the trench bottom meets the Ge ATR crystal and that a critical amount of C-F buildup is necessary to maintain the anisotropic etch profile.

  6. Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL

    NASA Astrophysics Data System (ADS)

    Lee, Changwoo; Nagabhirava, Bhaskar; Goss, Michael; Wang, Peng; Friddle, Phil; Schmitz, Stafan; Wu, Jian; Yang, Richard; Mignot, Yann; Rassoul, Nouradine; Hamieh, Bassem; Beique, Genevieve; Labonte, Andre; Labelle, Catherine; Arnold, John; Mucci, John

    2015-03-01

    As feature critical dimension (CD) shrinks towards and beyond the 7nm node, patterning techniques for optical lithography with double and triple exposure will be replaced by EUV patterning. EUV enables process and overlay improvement, as well as a potential cost reduction due to fewer wafer passes and masks required for patterning. However, the EUV lithography technique introduces newer types of resists that are thinner and softer compared to conventional 193nm resists currently being used. The main challenge is to find the key etch process parameters to improve the EUV resist selectivity, reduce LER and LWR, minimize line end shrink, improve tip-to-tip degradation, and avoid line wiggling while still enabling previous schemes such as trench-first-metal-hard-mask (TFMHM), self-aligned via (SAV) and self-aligned contact (SAC). In this paper, we will discuss some of the approaches that we have investigated to define the best etch process adjustments to enable EUV patterning. RF pulsing is one of the key parameters utilized to overcome most of the previously described challenges, and has also been coupled with stack optimization. This study will focus on RF pulsing (high vs. low frequency results) and bias control (RF frequency dependence). In particular, pulsing effects on resist morphology, selectivity and profile management will be reported, as well as the role of aspect ratio and etch chemistry on organic mask wiggling and collapse. This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities.

  7. Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching

    PubMed Central

    Makaryan, Taron; Enderle, Fabian; Wiedemann, Stefan; Plettl, Alfred; Marti, Othmar; Ziemann, Paul

    2011-01-01

    Summary We present two routes for the fabrication of plasmonic structures based on nanosphere lithography templates. One route makes use of soft-lithography to obtain arrays of epoxy resin hemispheres, which, in a second step, can be coated by metal films. The second uses the hexagonal array of triangular structures, obtained by evaporation of a metal film on top of colloidal crystals, as a mask for reactive ion etching (RIE) of the substrate. In this way, the triangular patterns of the mask are transferred to the substrate through etched triangular pillars. Making an epoxy resin cast of the pillars, coated with metal films, allows us to invert the structure and obtain arrays of triangular holes within the metal. Both fabrication methods illustrate the preparation of large arrays of nanocavities within metal films at low cost. Gold films of different thicknesses were evaporated on top of hemispherical structures of epoxy resin with different radii, and the reflectance and transmittance were measured for optical wavelengths. Experimental results show that the reflectivity of coated hemispheres is lower than that of coated polystyrene spheres of the same size, for certain wavelength bands. The spectral position of these bands correlates with the size of the hemispheres. In contrast, etched structures on quartz coated with gold films exhibit low reflectance and transmittance values for all wavelengths measured. Low transmittance and reflectance indicate high absorbance, which can be utilized in experiments requiring light confinement. PMID:22003451

  8. GaN Etch Rates Compared with Atomic Chlorine Density and Ion Flux in an Argon/Chlorine Inductively Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Mahony, C. M. O.; Rizvi, S. A.; Maguire, P. D.; Garcia, F.; Graham, W. G.

    2004-09-01

    We present GaN etch rates (maximum 700nm/min), atomic chlorine densities (via Laser Induced Fluorescence at 200W RF power), positive ion densities (Langmuir probe) and positive ion wall flux (capacitive planar probe) using an Inductively Coupled Plasma as a function of chlorine in argon gas fraction from 0% to 100% at maximum RF power and pressure of 400 W and 20 mTorr respectively. In general, with chlorine addition, etch rates rise initially then tend to saturate at fractions above 50% Cl_2. Wall flux and n^+ approximate the inverse of this behaviour. The atomic chlorine density at 200W RF power rises monotonically with a pronounced inflection near 50% Cl_2. The positive ion wall flux - atomic chlorine density product strongly correlates with etch rate suggesting physical etching dominates below 50% Cl2 and chemical processes above. This is reflected in changes of the Ga/N surface stoichiometry, determined by XPS analysis.

  9. Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

    NASA Astrophysics Data System (ADS)

    Liu, Zuwei; Gu, Xiaodan; Hwu, Justin; Sassolini, Simone; Olynick, Deirdre L.

    2014-07-01

    The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology. Despite the advances in BCP lithography, plasma pattern transfer remains a major challenge. We use controlled and low substrate temperatures during plasma etching of a chromium hard mask and then the underlying substrate as a route to high aspect ratio sub-10 nm silicon features derived from BCP lithography. Siloxane masks were fabricated using poly(styrene-b-siloxane) (PS-PDMS) BCP to create either line-type masks or, with the addition of low molecular weight PS-OH homopolymer, dot-type masks. Temperature control was essential for preventing mask migration and controlling the etched feature’s shape. Vertical silicon wire features (15 nm with feature-to-feature spacing of 26 nm) were etched with aspect ratios up to 17 : 1; higher aspect ratios were limited by the collapse of nanoscale silicon structures. Sub-10 nm fin structures were etched with aspect ratios greater than 10 : 1. Transmission electron microscopy images of the wires reveal a crystalline silicon core with an amorphous surface layer, just slightly thicker than a native oxide.

  10. Effect of gas mixing ratio on etch behavior of ZrO{sub 2} thin films in BCl{sub 3}/He inductively coupled plasma

    SciTech Connect

    Kim, Mansu; Min, Nam-Ki; Yun, Sun Jin; Lee, Hyun Woo; Efremov, Alexander; Kwon, Kwang-Ho

    2008-05-15

    This article reports a study carried out on a model-based analysis of the etch mechanism for ZrO{sub 2} thin films in a BCl{sub 3}/He inductively coupled plasma. It was found that an increase in the He mixing ratio at a fixed gas pressure and input power results in an increase in the ZrO{sub 2} etch rate, which changes from 36 to 57 nm/min for 0-83% He. Langmuir probe diagnostics and zero-dimensional plasma modeling indicated that both plasma parameters and active species kinetics were noticeably influenced by the initial composition of the BCl{sub 3}/He mixture, resulting in the nonmonotonic or nonlinear behaviors of species densities. Using the model-based analysis of etch kinetics, it was demonstrated that the behavior of the ZrO{sub 2} etch rate corresponds to the ion-flux-limited etch regime of the ion-assisted chemical reaction.

  11. Measurement of energy distribution in flowing hydrogen microwave plasmas

    NASA Technical Reports Server (NTRS)

    Chapman, R.; Morin, T.; Finzel, M.; Hawley, M. C.

    1985-01-01

    An electrothermal propulsion concept utilizing a microwave plasma system as the mechanism to convert electromagnetic energy into kinetic energy of a flowing gas is investigated. A calorimetry system enclosing a microwave plasma system has been developed to accurately measure the energy inputs and outputs of the microwave plasma system. The rate of energy transferred to the gas can be determined to within + or - 1.8 W from an energy balance around the microwave plasma system. The percentage of the power absorbed by the microwave plasma system transferred to the hydrogen gas as it flows through the system is found to increase with the increasing flow rate, to decrease with the increasing pressure, and to be independent of the absorbed power. An upper bound for the hydrogen gas temperature is estimated from the energy content, heat capacity, and flow rate of the gas stream. A lower bound for an overall heat-transfer coefficient is then calculated, characterizing the energy loss from the hydrogen gas stream to the air cooling of the plasma discharge tube wall. The heat-transfer coefficient is found to increase with the increasing flow rate and pressure and to be independent of the absorbed power. This result indicates that a convective-type mechanism is responsible for the energy transfer.

  12. On the optical and morphological properties of microstructured Black Silicon obtained by cryogenic-enhanced plasma reactive ion etching

    NASA Astrophysics Data System (ADS)

    Nguyen, K. N.; Basset, P.; Marty, F.; Leprince-Wang, Y.; Bourouina, T.

    2013-05-01

    Motivated by the need for obtaining low reflectivity silicon surfaces, we report on (sub-) micro-texturing of silicon using a high throughput fabrication process involving SF6/O2 reactive ion etching at cryogenic temperatures, leading to Black Silicon (BS). The corresponding high aspect ratio conical spikes of the microstructured surface give rise to multiple reflections and hence, enhanced absorption under electromagnetic radiation. Aiming a better understanding of this mechanism, we performed a systematic study by varying several plasma process parameters: O2/SF6 gas flow rate ratio, silicon temperature, bias voltage, and etching time. We determined the process window which leads to BS formation and we studied the influence of the process parameters on the surface morphology of the obtained BS samples, through analysis of scanning electron microscopy images. The measured optical reflectance of BS is in the order of 1% in the visible and near infrared ranges (400-950 nm). We noticed that the lowest reflectance is obtained close to the threshold parameters of BS formation. Absorptance spectral response of BS is measured from 1.3 to 17 μm, and we observed a great enhancement of absorptance up to about 75% compared to flat silicon. We also obtained through these experiments, a clear evidence of a correlation between the excellent optical properties and the aspect ratio of the BS conical microstructures in the measured wavelength ranges.

  13. Three-Dimensional Polymeric Mechanical Metamaterials Fabricated by Multibeam Interference Lithography with the Assistance of Plasma Etching.

    PubMed

    Kang, Da-Young; Lee, Wooju; Kim, Dongchoul; Moon, Jun Hyuk

    2016-08-23

    The pentamode structure is a type of mechanical metamaterial that displays dramatically different bulk and shear modulus responses. In this study, a face-centered cubic (FCC) polymeric microstructure was fabricated by using SU8 negative-type photoresists and multibeam interference exposure. Isotropic plasma etching is used to control the solid-volume fraction; for the first time, we obtained a structure with the minimum solid-volume fraction as low as 15% that still exhibited high structural integrity. Using this method, we reduced the width of atom-to-atom connections by up to 40 nm. We characterize the effect of the connection area on the anisotropy of the mechanical properties using simulations. Nanoindentation measurements were also conducted to evaluate the energy dissipation by varying the connection area. The Young's/shear modulus ratio is 5 times higher for the etched microstructure than that of the bulk SU8 materials. The use of interference lithography may enable the properties of microscale materials to be engineered for various applications, such as MEMS. PMID:27466084

  14. A structure zone diagram including plasma based deposition and ion etching

    SciTech Connect

    Anders, Andre

    2009-10-14

    An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition?structure relationships.

  15. Negative hydrogen ion yields at plasma grid surface in a negative hydrogen ion source

    SciTech Connect

    Wada, M.; Kenmotsu, T.; Sasao, M.

    2015-04-08

    Negative hydrogen (H{sup −}) ion yield from the plasma grid due to incident hydrogen ions and neutrals has been evaluated with the surface collision cascade model, ACAT (Atomic Collision in Amorphous Target) coupled to a negative surface ionization models. Dependence of negative ion fractions upon the velocity component normal to the surface largely affect the calculation results of the final energy and angular distributions of the H{sup −} ions. The influence is particularly large for H{sup −} ions desorbed from the surface due to less than several eV hydrogen particle implact. The present calculation predicts that H{sup −} ion yield can be maximized by setting the incident angle of hydrogen ions and neutrals to be 65 degree. The Cs thickness on the plasma grid should also affect the yields and mean energies of surface produced H{sup −} ions by back scattering and ion induced desorption processes.

  16. Positron scattering from hydrogen atom embedded in dense quantum plasma

    SciTech Connect

    Bhattacharya, Arka; Kamali, M. Z. M.; Ghoshal, Arijit; Ratnavelu, K.

    2013-08-15

    Scattering of positrons from the ground state of hydrogen atoms embedded in dense quantum plasma has been investigated by applying a formulation of the three-body collision problem in the form of coupled multi-channel two-body Lippmann-Schwinger equations. The interactions among the charged particles in dense quantum plasma have been represented by exponential cosine-screened Coulomb potentials. Variationally determined hydrogenic wave function has been employed to calculate the partial-wave scattering amplitude. Plasma screening effects on various possible mode of fragmentation of the system e{sup +}+H(1s) during the collision, such as 1s→1s and 2s→2s elastic collisions, 1s→2s excitation, positronium formation, elastic proton-positronium collisions, have been reported in the energy range 13.6-350 eV. Furthermore, a comparison has been made on the plasma screening effect of a dense quantum plasma with that of a weakly coupled plasma for which the plasma screening effect has been represented by the Debye model. Our results for the unscreened case are in fair agreement with some of the most accurate results available in the literature.

  17. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    NASA Astrophysics Data System (ADS)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  18. Charge transfer in proton-hydrogen collisions under Debye plasma

    SciTech Connect

    Bhattacharya, Arka; Kamali, M. Z. M.; Ghoshal, Arijit; Ratnavelu, K.

    2015-02-15

    The effect of plasma environment on the 1s → nlm charge transfer, for arbitrary n, l, and m, in proton-hydrogen collisions has been investigated within the framework of a distorted wave approximation. The effect of external plasma has been incorporated using Debye screening model of the interacting charge particles. Making use of a simple variationally determined hydrogenic wave function, it has been possible to obtain the scattering amplitude in closed form. A detailed study has been made to investigate the effect of external plasma environment on the differential and total cross sections for electron capture into different angular momentum states for the incident energy in the range of 20–1000 keV. For the unscreened case, our results are in close agreement with some of the most accurate results available in the literature.

  19. Absorption coefficients of a hydrogen plasma for laser radiation

    NASA Technical Reports Server (NTRS)

    Stallcop, J. R.

    1974-01-01

    The formalism for the calculation of the absorption of radiation by a hydrogen plasma at common laboratory conditions is summarized. The hydrogen plasma absorption coefficient for laser radiation has been computed for a wide range of electron densities and temperatures (10,000-40,000 K). The results of this computation are presented in a graphical form that permits a determination of the absorption coefficient for the following laser wavelengths: 0.176, 0.325, 0.337, 0.442, 0.488, 0.515, 0.633, 0.694, 1.06, 1.15, 2.36, 3.39, 5.40 and 10.6 microns. The application of these results and laser radiation absorption measurements to plasma diagnostics is discussed briefly.

  20. Charge transfer in proton-hydrogen collisions under Debye plasma

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Arka; Kamali, M. Z. M.; Ghoshal, Arijit; Ratnavelu, K.

    2015-02-01

    The effect of plasma environment on the 1s → nlm charge transfer, for arbitrary n, l, and m, in proton-hydrogen collisions has been investigated within the framework of a distorted wave approximation. The effect of external plasma has been incorporated using Debye screening model of the interacting charge particles. Making use of a simple variationally determined hydrogenic wave function, it has been possible to obtain the scattering amplitude in closed form. A detailed study has been made to investigate the effect of external plasma environment on the differential and total cross sections for electron capture into different angular momentum states for the incident energy in the range of 20-1000 keV. For the unscreened case, our results are in close agreement with some of the most accurate results available in the literature.

  1. The contribution of H ion etching under different substrate bias to the orientation degree of diamond films

    SciTech Connect

    Zhang, W.J.; Jiang, X.

    1998-12-31

    An etching process of hydrogen ions was performed during the initial growth stage of diamond films. The H{sup +} ion etching was performed by applying a negative substrate bias during a microwave plasma chemical vapor deposition process, using only hydrogen as a reactant gas. The contribution of H{sup +} etching under different substrate bias and for different etching time to the orientation degree of diamond films was investigated by scanning electron microscopy and atomic force microscopy. It was found that an additional H{sup +} etching process had influence on the orientation degree of deposited (001)-oriented diamond films. To achieve a significant improvement of crystal orientation, the bias voltage and etching time should be adjusted concerning the situation of diamond films.

  2. Investigation of plasma hydrogenation and trapping mechanism for layer transfer

    NASA Astrophysics Data System (ADS)

    Chen, Peng; Chu, Paul K.; Höchbauer, T.; Lee, J.-K.; Nastasi, M.; Buca, D.; Mantl, S.; Loo, R.; Caymax, M.; Alford, T.; Mayer, J. W.; Theodore, N. David; Cai, M.; Schmidt, B.; Lau, S. S.

    2005-01-01

    Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si wafers coated with thermal oxide. In this work, we studied the feasibility of using plasma hydrogenation to replace high dose H implantation for layer transfer. Boron ion implantation was used to introduce H-trapping centers into Si wafers to illustrate the idea. Instead of the widely recognized interactions between boron and hydrogen atoms, this study showed that lattice damage, i.e., dangling bonds, traps H atoms and can lead to surface blistering during hydrogenation or upon postannealing at higher temperature. The B implantation and subsequent processes control the uniformity of H trapping and the trap depths. While the trap centers were introduced by B implantation in this study, there are many other means to do the same without implantation. Our results suggest an innovative way to achieve high quality transfer of Si layers without H implantation at high energies and high doses.

  3. Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry

    NASA Astrophysics Data System (ADS)

    Yamada, Takahiro; Ohmi, Hiromasa; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2016-02-01

    The density of hydrogen (H) atoms in the narrow-gap microwave hydrogen plasma generated under high-pressure conditions is expected to be very high because of the high input power density of the order of 104 W/cm3. For measuring the H atom density in such a high-pressure and high-density plasma, power-balance calorimetry is suited since a sufficient signal to noise ratio is expected. In this study, H atom density in the narrow-gap microwave hydrogen plasma has been determined by the power-balance calorimetry. The effective input power to the plasma is balanced with the sum of the powers related to the out-going energy per unit time from the plasma region via heat conduction, outflow of high-energy particles, and radiation. These powers can be estimated by simple temperature measurements using thermocouples and optical emission spectroscopy. From the power-balance data, the dissociation fraction of H2 molecules is determined, and the obtained maximum H atom density is (1.3 ± 0.2) × 1018 cm-3. It is found that the H atom density increases monotonically with increasing the energy invested per one H2 molecule within a constant plasma volume.

  4. Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

    NASA Astrophysics Data System (ADS)

    Dussart, R.; Tillocher, T.; Lefaucheux, P.; Boufnichel, M.

    2014-03-01

    The evolution of silicon cryoetching is reported in this topical review, from its very first introduction by a Japanese team to today's advanced technologies. The main advances in terms of the performance and comprehension of the mechanisms are chronologically presented. After presenting the principle of silicon cryoetching, the main defects encountered in cryoetching (such as undercut, bowing and crystal orientation dependent etching) are presented and discussed. Mechanisms involved in SiOxFy passivation layer growth in standard cryoetching are investigated through several in situ characterization experiments. The STiGer process and alternative cryoetching processes for high-aspect-ratio structures are also proposed to enhance the process robustness. The over-passivation regime, which can provide self-organized columnar microstructures, is presented and discussed. Finally, advanced technologies, such as the cryoetching of sub-20 nm features and porous OSG low-k cryoetching, are described.

  5. ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2/Ar and Cl2/BCl3/Ar plasma chemistry and surface pretreatment

    NASA Astrophysics Data System (ADS)

    Shah, Amit P.; Azizur Rahman, A.; Bhattacharya, Arnab

    2015-01-01

    We report a comprehensive investigation of inductively-coupled plasma reactive ion etching (ICP-RIE) of polar (0001) c-plane, semi-polar (11-22) and non-polar (11-20) a-plane AlN epilayers and show that under optimized conditions a combination of BCl3-based surface oxide removal pretreatment and Cl2/Ar ICP etching allows fast etch rates (750 nm min-1) with a smooth surface morphology. We compare samples of different orientation etched in Cl2/Ar and Cl2/BCl3/Ar plasmas, with and without BCl3/Ar ICP pretreatment, and show that the effective removal of surface oxide is a crucial step for reliable ICP-RIE etching of AlN layers. For such pretreated samples, optimization of etch parameters such as RF power, ICP power, and chamber pressure then permit very high etch rates to be obtained with a smooth surface morphology. We also study the effect of varying the BCl3 fraction in BCl3/Cl2/Ar plasmas on the etch rate and surface morphology and find that increasing the BCl3 fraction reduces the etch rate for AlN. However, above 20% BCl3 content, samples with and without pre-treatment show similar etch rates.

  6. Dry-etching properties of TiN for metal/high-k gate stack using BCl{sub 3}-based inductively coupled plasma

    SciTech Connect

    Kim, Dong-Pyo; Yang Xue; Woo, Jong-Chang; Um, Doo-Seung; Kim, Chang-Il

    2009-11-15

    The etch rate of TiN film and the selectivities of TiN/SiO{sub 2} and TiN/HfO{sub 2} were systematically investigated in Cl{sub 2}/BCl{sub 3}/Ar plasmas as functions of Cl{sub 2} flow rate, radio-frequency (rf) power, and direct-current (dc) bias voltage under different substrate temperatures of 10 and 80 degree sign C. The etch rate of TiN films increased with increasing Cl{sub 2} flow rate, rf power, and dc-bias voltage at a fixed substrate temperature. In addition, the etch rate of TiN films at 80 degree sign C were higher than that at 10 degree sign C when other plasma parameters were fixed. However, the selectivities of TiN/SiO{sub 2} and TiN/HfO{sub 2} showed different tendencies compared with etch-rate behavior as a function of rf power and dc bias voltage. The relative-volume densities of Ar (750.0 nm), Cl (725.2 nm), and Cl{sup +} (386.6 nm) were monitored with an optical-emission spectroscopy. When rf power increased, the relative-volume densities of all studied particles were increased. X-ray photoelectron spectroscopy was carried out to detect nonvolatile etch by-products from the surface, and nonvolatile peaks (TiCl{sub x} bonds) in Ti 2p and Cl 2p were observed due to their high melting points. Based on the experimental results, we can conclude that the TiN etch is dependent on the substrate temperature when other plasma parameters are fixed. This can be explained by the enhanced chemical pathway with the assistance of ion bombardment.

  7. Room temperature hydrogen gas sensing characteristics of porous quaternary AlInGaN film prepared via UV-assisted photo-electrochemical etching

    NASA Astrophysics Data System (ADS)

    Quah, Hock Jin; Ahmed, Naser Mahmoud; Zainal, Norzaini; Yam, Fong Kwong; Hassan, Zainuriah; Lim, Way Foong

    2016-07-01

    This paper reports room temperature hydrogen gas sensing characteristics of porous quaternary AlInGaN prepared via ultraviolet-assisted photo-electrochemical etching in 1-4% diluted potassium hydroxide (KOH) solution. The highest sensitivity (S), the lowest response time and recovery time were obtained by the 4% KOH etched sample, owing to good adsorption and desorption of adsorbed H atoms over the largest surface area provided by the highest pore density. An increase in forward bias to 2.0 V has enhanced S (98.0%) of the sample while a relatively low bias of 0.5 V was sufficient to yield S of 81.9% in the sample.

  8. Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport

    NASA Astrophysics Data System (ADS)

    Ohmi, Hiromasa; Hori, Takahiro; Mori, Tetsuya; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2011-06-01

    The synthesis of microcrystalline 3C-SiC films on glass substrates at relatively low temperatures (<=600 °C) by the plasma-enhanced chemical transport method was carried out using a high-pressure pure hydrogen glow discharge. This method used the chemical erosion products of graphite and silicon in the hydrogen plasma as the deposition source. The temperature dependence of the etching rate of graphite and the generated volatile C-species were investigated by exposing sintered graphite to a pure hydrogen plasma at 100 Torr. Infrared absorption gas analysis indicated that the C-related film precursor generated from the graphite was mainly CH4. The etch rate of graphite reached a maximum at a sample temperature of 200 °C. The deposition rate of the SiC film prepared at a hydrogen pressure of 200 Torr increased monotonically from 14 to 29 nm min-1 with an increase in substrate temperature (Tsub) from 100 to 600 °C. The Si/C composition ratio in the films was independent of Tsub and all the film compositions were nearly stoichiometric. The prepared SiC films were microcrystalline 3C-SiC. Raman spectroscopy indicated that the film quality significantly depends on Tsub. The electrical conductivity of the films at room temperature was found to increase exponentially from 3 × 10-4 to 1.7 S cm-1 with Tsub.

  9. Optical emission spectroscopy of argon and hydrogen-containing plasmas

    NASA Astrophysics Data System (ADS)

    Siepa, Sarah; Danko, Stephan; Tsankov, Tsanko V.; Mussenbrock, Thomas; Czarnetzki, Uwe

    2015-09-01

    Optical emission spectroscopy (OES) on neutral argon is applied to investigate argon, hydrogen and hydrogen-silane plasmas. The spectra are analyzed using an extensive collisional-radiative model (CRM), from which the electron density and the electron temperature (or mean energy) can be calculated. The CRM also yields insight into the importance of different excited species and kinetic processes. The OES measurements are performed on pure argon plasmas at intermediate pressure. Besides, hydrogen and hydrogen-silane plasmas are investigated using argon as a trace gas. Especially for the gas mixture discharges, CRMs for low and high pressure differ substantially. The commonly used line-ratio technique is found to lose its sensitivity for gas mixture discharges at higher pressure. A solution using absolutely calibrated line intensities is proposed. The effect of radiation trapping and the shape of the electron energy distribution function on the results are discussed in detail, as they have been found to significantly influence the results. This work was supported by the Ruhr University Research School PLUS, funded by Germany's Excellence Initiative [DFG GSC 98/3].

  10. Analysis of a microwave-heated planar propagating hydrogen plasma

    SciTech Connect

    Knecht, J.P.; Micci, M.M.

    1988-02-01

    The heating of a gas to high temperatures by absorption of microwave radiation has been proposed as a potential electrothermal rocket propulsion system. One possible mode of microwave energy absorption is by means of a planar plasma region propagating toward the source of the microwave radiation. Such a planar propagating plasma can be spatially stabilized by a gas stream flowing in the same direction as the microwave radiation with a velocity equal to the plasma propagation velocity. A one-dimensional analysis of the microwave-heated planar propagating plasma for hydrogen gas was developed to predict maximum gas temperatures and propagation velocities. The governing electromagnetic and energy equations were numerically integrated with temperature-dependent thermodynamic properties of equilibrium hydrogen. The propagation velocity eigenvalue was solved by means of an iterative technique. Temperature distribution in the gas, propagation velocities, and percent power absorbed, reflected and transmitted, were obtained as a function of incident microwave power at a frequency of 2.45 GHza for hydrogen gas pressures of 1 and 10 atm. 19 references.

  11. The hydrogen atom in plasmas with an external electric field

    SciTech Connect

    Bahar, M. K.; Soylu, A.

    2014-09-15

    We numerically solve the Schrödinger equation, using a more general exponential cosine screened Coulomb (MGECSC) potential with an electric field, in order to investigate the screening and weak external electric field effects on the hydrogen atom in plasmas. The MGECSC potential is examined for four different cases, corresponding to different screening parameters of the potential and the external electric field. The influences of the different screening parameters and the weak external electric field on the energy eigenvalues are determined by solving the corresponding equations using the asymptotic iteration method (AIM). It is found that the corresponding energy values shift when a weak external electric field is applied to the hydrogen atom in a plasma. This study shows that a more general exponential cosine screened Coulomb potential allows the influence of an applied, weak, external electric field on the hydrogen atom to be investigated in detail, for both Debye and quantum plasmas simultaneously. This suggests that such a potential would be useful in modeling similar effects in other applications of plasma physics, and that AIM is an appropriate method for solving the Schrödinger equation, the solution of which becomes more complex due to the use of the MGECSC potential with an applied external electric field.

  12. Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N{sub 2}, O{sub 2} plasmas

    SciTech Connect

    Efremov, Alexander; Kang, Sungchil; Kwon, Kwang-Ho; Seok Choi, Won

    2011-11-15

    Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N{sub 2}, and HBr-O{sub 2} inductively-coupled plasmas were studied using a combination of experimental and modeling methods. The etch rates of SiC thin films were measured as functions of the additive gas fraction in the range of 0-100% for Ar, N{sub 2}, and O{sub 2} at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using Langmuir probe diagnostics and a global (zero-dimensional) plasma model. The good agreement between the behaviors of the SiC etch rate and the H atom flux could suggest that a chemical etch pathway is rather controlled by the gasification of carbon through the CH{sub x} or CH{sub x}Br{sub y} compounds.

  13. Numerical simulation of hydrogen plasma in MPCVD reactor

    NASA Astrophysics Data System (ADS)

    Huang, Di

    A numerical study was conducted to build a model able to estimate the plasma properties under different working conditions for pure hydrogen plasma in a MPCVD reactor. A plasma model based on standing wave assumption and a linear estimation of ne and coupled the EM simulation, heat transfer simulation and UDF calculations of plasma properties was built in COMSOL Muitiphysics and tested with six different working conditions. The reliability of COMSOL EM solver was tested through comparing the simulation results with a benchmark EM solver, ANSYS HFSS. The validities of two assumptions made about the electrical field, standing wave assumption and sinusoidal oscillation field assumption, were tested by a PDE solver in COMSOL for utilizing the drift-diffusion model of ne.

  14. Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

    NASA Astrophysics Data System (ADS)

    Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

    2013-01-01

    Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

  15. Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits--A model prediction of damage in three dimensional structures

    NASA Astrophysics Data System (ADS)

    Eriguchi, Koji

    2014-10-01

    An increasing demand for high performance field-effect transistors (FETs) leads to the aggressive critical dimension shrinkage and the currently-emerging three dimensional (3D) geometry. Plasma processing is widely used also in the scaled- and 3D-FET (e.g. FinFET) manufacturing, where precise control of the reaction on the (sidewall) surfaces is a prime issue. In this study, damage creation mechanism during plasma etching--plasma-induced physical damage (PPD)--was investigated in such structures on the basis of the PPD range theory, atomistic simulations, and experiments. Compared to PPD in planar FETs (e.g. Si recess [2,3]), a stochastic modeling and atomistic simulations predicted that, during etching of ``fins'' in a 3D-FET, the following two mechanisms are responsible for damage creation in addition to an ion impact on the sidewall at an oblique incident angle: 1) incoming ions penetrate into the Si substrate and undergo scattering by Si atoms in the lateral direction even if the incident angle is normal to the surface and 2) some of Si atoms and ions sputtered at the surface being etched impact on the sidewall with energies sufficient to break Si-Si bonds. These straggling and sputtering processes are stochastic and fundamental, thus, result in 3D structure damage (``fin-damage''). The ``fin-damage'' induced by straggling was modeled by the PPD range theory. Molecular dynamics simulations clarified the mechanisms under the various plasma conditions. Quantum mechanical calculations showed that created defect structures play the role of a carrier trap site, which was experimentally verified by an electrical measurement. Since they are intrinsic natures of etching, both straggling and sputtering noted here should be implemented to design a low-damage etching process. This work was supported in part by Grant-in-Aid for Scientific Research (B) 23360321 from JSPS and STARC project.

  16. Ultrahigh-speed etching of SiO{sub 2} with ultrahigh selectivity over Si in microwave-excited non equilibrium atmospheric pressure plasma

    SciTech Connect

    Yamakawa, Koji; Hori, Masaru; Goto, Toshio; Den, Shoji; Katagiri, Toshirou; Kano, Hiroyuki

    2004-07-26

    Etching of a SiO{sub 2} film [Boro-phospho silicate glass (BPSG)] has been performed in a continuous-wave microwave-excited nonequilibrium atmospheric pressure plasma using a microgap discharge. A NF{sub 3}/He gas mixture with added H{sub 2}O was employed as the feed gas. An ultrahigh etch rate for SiO{sub 2} (BPSG) of 14 {mu}m/min and an ultrahigh selectivity over Si(SiO{sub 2}/Si) of 200 was obtained. A mechanism for the selective etching is proposed based on results obtained using Fourier transform infrared spectroscopy and spatially imaged optical emission spectroscopy with an intensified charge-coupled device camera. This process could offer a breakthrough for ultrahigh-speed, damage-free micromachining of SiO{sub 2} in microelectromechanical system devices.

  17. Effect of Hydrogen Plasma on Model Corrosion Layers of Bronze

    NASA Astrophysics Data System (ADS)

    Fojtíková, P.; Sázavská, V.; Mika, F.; Krčma, F.

    2016-05-01

    Our work is about plasmachemical reduction of model corrosion layers. The model corrosion layers were produced on bronze samples with size of 10 × 10 × 5 mm3, containing Cu and Sn. Concentrated hydrochloric acid was used as a corrosive environment. The application of reduction process in low-pressure low-temperature hydrogen plasma followed. A quartz cylindrical reactor with two outer copper electrodes was used. Plasma discharge was generated in pure hydrogen by a RF generator. Each corroded sample was treated in different conditions (supplied power and a continual or pulsed regime with a variable duty cycle mode). Process monitoring was ensured by optical emission spectroscopy. After treatment, samples were analyzed by SEM and EDX.

  18. Hydrogen plasma dynamics in the spherical theta pinch plasma target for heavy ion stripping

    SciTech Connect

    Loisch, G.; Jacoby, J.; Xu, G.; Blazevic, A.; Cihodariu-Ionita, B.

    2015-05-15

    Due to the superior ability of dense and highly ionised plasmas to ionise penetrating heavy ion beams to degrees beyond those reachable by common gas strippers, many experiments have been performed to find suitable plasma generators for this application. In the field of gas discharges, mainly z-pinch devices have been investigated so far, which are known to be limited by the nonlinear focusing effects of the plasma columns sustaining current and by electrode erosion. The spherical theta pinch has therefore been proposed as a substitution for the z-pinch, promising progress by inductive rather than capacitive coupling and displacement of the outer magnetic field by the dense, diamagnetic discharge plasma. As yet mainly experiments with argon/hydrogen mixture gas have been performed, which is not suitable for the application as a plasma stripper, this paper describes the first detailed analysis of the plasma parameters and dynamics of a hydrogen plasma created by the spherical theta pinch. These include the time integrated and time resolved electron density, the dynamics of the plasma in the discharge vessel, the comparison with the argon dominated plasma, and an outlook to reachable characteristics with similar devices.

  19. Hydrogen plasma dynamics in the spherical theta pinch plasma target for heavy ion stripping

    NASA Astrophysics Data System (ADS)

    Loisch, G.; Xu, G.; Blazevic, A.; Cihodariu-Ionita, B.; Jacoby, J.

    2015-05-01

    Due to the superior ability of dense and highly ionised plasmas to ionise penetrating heavy ion beams to degrees beyond those reachable by common gas strippers, many experiments have been performed to find suitable plasma generators for this application. In the field of gas discharges, mainly z-pinch devices have been investigated so far, which are known to be limited by the nonlinear focusing effects of the plasma columns sustaining current and by electrode erosion. The spherical theta pinch has therefore been proposed as a substitution for the z-pinch, promising progress by inductive rather than capacitive coupling and displacement of the outer magnetic field by the dense, diamagnetic discharge plasma. As yet mainly experiments with argon/hydrogen mixture gas have been performed, which is not suitable for the application as a plasma stripper, this paper describes the first detailed analysis of the plasma parameters and dynamics of a hydrogen plasma created by the spherical theta pinch. These include the time integrated and time resolved electron density, the dynamics of the plasma in the discharge vessel, the comparison with the argon dominated plasma, and an outlook to reachable characteristics with similar devices.

  20. A study of increasing radical density and etch rate using remote plasma generator system

    NASA Astrophysics Data System (ADS)

    Lee, Jaewon; Kim, Kyunghyun; Cho, Sung-Won; Chung, Chin-Wook

    2013-09-01

    To improve radical density without changing electron temperature, remote plasma generator (RPG) is applied. Multistep dissociation of the polyatomic molecule was performed using RPG system. RPG is installed to inductively coupled type processing reactor; electrons, positive ions, radicals and polyatomic molecule generated in RPG and they diffused to processing reactor. The processing reactor dissociates the polyatomic molecules with inductively coupled power. The polyatomic molecules are dissociated by the processing reactor that is operated by inductively coupled power. Therefore, the multistep dissociation system generates more radicals than single-step system. The RPG was composed with two cylinder type inductively coupled plasma (ICP) using 400 kHz RF power and nitrogen gas. The processing reactor composed with two turn antenna with 13.56 MHz RF power. Plasma density, electron temperature and radical density were measured with electrical probe and optical methods.

  1. High aspect ratio silicon etch: A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Pamarthy, Sharma

    2010-09-01

    High aspect ratio (HAR) silicon etch is reviewed, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology. This potential large scale application requires HAR etch with high and stable throughput, controllable profile and surface properties, and low costs.

  2. Amphiphobicity of polyvinylidene fluoride porous films after atmospheric pressure plasma intermittent etching

    NASA Astrophysics Data System (ADS)

    Liu, Xuyan; Choi, Ho-Suk; Park, Bo-Ryoung; Lee, Hyung-Keun

    2011-08-01

    This study modified the surface of polyvinylidene fluoride (PVDF) films and characterized their surface physicochemical properties. The main aim of this study was to examine how to provide the surface with a specific property, e.g., not only hydrophobic but also oleophobic (amphiphobicity) after argon atmospheric pressure plasma (APP) treatment. The surface free energy calculated using the Owens-Wendt (OW) method decreased significantly while showing a very small value of the polar component. Scanning electron microscopy indicated that a small amount of hydrophilic solid spines and many superamphiphobic uniform micro air pockets formed in the plasma-modified PVDF film, which made it amphiphobic but not superamphiphobic.

  3. Fluid hydrogen at high density - The plasma phase transition

    NASA Technical Reports Server (NTRS)

    Saumon, D.; Chabrier, G.

    1989-01-01

    A new model equation of state is applied, based on realistic interparticle potentials and a self-consistent treatment of the internal levels, to fluid hydrogen at high density. This model shows a strong connection between molecular dissociation and pressure ionization. The possibility of a first-order plasma phase transition is considered, and for which both the evolution in temperature and the critical point is given.

  4. Hydrogenation of Zr-2.5Nb alloy after plasma-immersion titanium implantation

    NASA Astrophysics Data System (ADS)

    Sutygina, A. N.; Kashkarov, E. B.; Nikitenkov, N. N.; Tyurin, Yu I.; Syrtanov, M. S.

    2016-02-01

    The study results of the influence of plasma-immersion ion implantation of titanium in Zr-2.5Nb on hydrogenation are presented. The titanium implantation was carried out in two modes: with active plasma filtering (APF) and passive plasma filtering (PPF). The results of total hydrogen concentration, absorption rate, XRD analyses and depth distribution of elements revealed that modified surface layer after titanium ion implantation is formed hydrogen diffusion barrier reduces hydrogen absorption by Zr-2.5Nb.

  5. Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

    PubMed

    Zhu, Hui; Qin, Xiaoye; Cheng, Lanxia; Azcatl, Angelica; Kim, Jiyoung; Wallace, Robert M

    2016-07-27

    Exfoliated molybdenum disulfide (MoS2) is shown to chemically oxidize in a layered manner upon exposure to a remote O2 plasma. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and atomic force microscopy (AFM) are employed to characterize the surface chemistry, structure, and topography of the oxidation process and indicate that the oxidation mainly occurs on the topmost layer without altering the chemical composition of underlying layer. The formation of S-O bonds upon short, remote plasma exposure pins the surface Fermi level to the conduction band edge, while the MoOx formation at high temperature modulates the Fermi level toward the valence band through band alignment. A uniform coverage of monolayer amorphous MoO3 is obtained after 5 min or longer remote O2 plasma exposure at 200 °C, and the MoO3 can be completely removed by annealing at 500 °C, leaving a clean ordered MoS2 lattice structure as verified by XPS, LEED, AFM, and scanning tunneling microscopy. This work shows that a remote O2 plasma can be useful for both surface functionalization and a controlled thinning method for MoS2 device fabrication processes. PMID:27386734

  6. Fluorocarbon assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

    SciTech Connect

    Metzler, Dominik; Oehrlein, Gottlieb S.; Bruce, Robert L.; Engelmann, Sebastian; Joseph, Eric A.

    2014-03-15

    The authors demonstrate atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. C{sub 4}F{sub 8} injection enables control of the deposited fluorocarbon (FC) layer thickness in the one to several Ångstrom range and chemical modification of the SiO{sub 2} surface. For low energy Ar{sup +} ion bombardment conditions, the physical sputter rate of SiO{sub 2} vanishes, whereas SiO{sub 2} can be etched when FC reactants are present at the surface. The authors have measured for the first time the temporal variation of the chemically enhanced etch rate of SiO{sub 2} for Ar{sup +} ion energies below 30 eV as a function of fluorocarbon surface coverage. This approach enables controlled removal of Ångstrom-thick SiO{sub 2} layers. Our results demonstrate that development of atomic layer etching processes even for complex materials is feasible.

  7. Production and loss mechanisms of SiCl{sub X} etch products during silicon etching in a high density HBr/Cl{sub 2}/O{sub 2} plasma

    SciTech Connect

    Cunge, G.; Kogelschatz, M.; Sadeghi, N.

    2004-10-15

    SiCl{sub X} (X=0-2) radicals' concentrations have been measured by broadband ultraviolet absorption spectroscopy during the etching of 200 mm diameter silicon wafers in HBr/Cl{sub 2}/O{sub 2} plasmas. We report the variations of the concentrations of these radicals as a function of the radio frequency (rf) source power and rf-bias power. The silicon wafer etch rate is measured simultaneously. From the measured radicals densities and using electron impact ionization cross sections found in the literature, the densities of SiCl{sub X}{sup +} ions are calculated and are found to be in good agreement with ion densities measured by mass spectrometry. The upper limit for the SiCl{sub 2} radical concentration is calculated from the wafer etch rate. By comparison with the measured SiCl{sub 2} radical concentration it is concluded that SiCl{sub 2} radicals should also be produced by the reactor walls due to the etching of silicon containing species adsorbed on the reactor walls. Finally, using electron impact dissociation cross sections, the densities of SiCl and Si are calculated from the measured densities of SiCl{sub 2} and SiCl, respectively. The comparison between the calculated and measured values of SiCl{sub X} densities allowed us to conclude that SiCl (and Si) are produced both in the gas phase by electron impact dissociation of SiCl{sub 2} (SiCl) radicals and at the reactor wall surfaces by the neutralization and reflection of {approx_equal}50% of the flux of SiCl{sup +} (Si{sup +}) ions impinging on these surfaces. At the same time SiCl and Si are estimated to be lost (adsorption and abstraction reactions) on the reactor walls with a probability ranging between 0.2 and 1.

  8. Nanotransfer Printing Using Plasma Etched Silicon Stamps and Mediated by In-Situ Deposited Fluoropolyme

    SciTech Connect

    Bhandari, Deepak; Kravchenko, Ivan I; Lavrik, Nickolay V; Sepaniak, Michael J

    2011-01-01

    This communication describes a simple method that uses a thin film of octafluorocyclobutane (OFCB) polymer for efficient nanoscale transfer printing (nTP). Plasma polymerization of OFCB produces a Teflon-like fluoropolymer which strongly adheres and conformally covers 3-D inorganic stamp. The inherently low surface energy of in-situ deposited OFCB polymer on nanoscale silicon features is demonstrated as a unique nanocomposite stamp to fabricate various test structures with improved nTP feature resolution down to sub 100 nm.

  9. Line shape modeling in warm and dense hydrogen plasmas

    NASA Astrophysics Data System (ADS)

    Ferri, S.; Calisti, A.; Mossé, C.; Talin, B.; Gigosos, M. A.; González, M. A.

    2007-05-01

    A study of hydrogen lines emitted in warm ( T˜1eV) and dense ( N≥1018cm -3) plasmas is presented. Under such plasma conditions, the electronic and the ionic contributions to the line width are comparable, and the general question related to a transition from impact to quasi-static broadening arises not only for the far wings but also for the core of spectral lines. The transition from impact to quasi-static broadening for electrons is analyzed by means of Frequency Fluctuation Model (FFM). In parallel, direct integration of the semi-classical evolution equation is performed using electron electric fields calculated by Molecular Dynamics (MD) simulations that permit one to correctly describe the emitter environment. New cross comparisons between benchmark MD simulations and FFM are carried out for electron broadening of the Balmer series lines, and, especially, for the Hα line, for which a few experiments in the warm and dense plasma regimes are available.

  10. Plasma Depolymerization of Chitosan in the Presence of Hydrogen Peroxide

    PubMed Central

    Ma, Fengming; Wang, Zhenyu; Zhao, Haitian; Tian, Shuangqi

    2012-01-01

    The depolymerization of chitosan by plasma in the presence of hydrogen peroxide (H2O2) was investigated. The efficiency of the depolymerization was demonstrated by means of determination of viscosity-average molecular weight and gel permeation chromatography (GPC). The structure of the depolymerized chitosan was characterized by Fourier-transform infrared spectra (FT-IR), ultraviolet spectra (UV) and X-ray diffraction (XRD). The results showed that chitosan can be effectively degradated by plasma in the presence of H2O2. The chemical structure of the depolymerized chitosan was not obviously modified. The combined plasma/H2O2 method is significantly efficient for scale-up manufacturing of low molecular weight chitosan. PMID:22837727

  11. Enhanced magnetic ionization in hydrogen reflex discharge plasma source

    SciTech Connect

    Toader, E.I.; Covlea, V.N.

    2005-03-01

    The effect of enhanced magnetic ionization on the external and internal parameters of a high-density, low pressure reflex plasma source operating in hydrogen is studied. The Langmuir probe method and Druyvesteyn procedure coupled with suitable software are used to measure the internal parameters. The bulk plasma region is free of an electric field and presents a high degree of uniformity. The electron energy distribution function is bi-Maxwellian with a dip/shoulder structure around 5.5 eV, independent of external parameters and radial position. Due to the enhanced hollow cathode effect by the magnetic trapping of electrons, the electron density n{sub e} is as high as 10{sup 18} m{sup -3}, and the electron temperature T{sub e} is as low as a few tens of an electron volt, for dissipated energy of tens of Watts. The bulk plasma density scales with the dissipated power.

  12. ION BEAM ETCHING EFFECTS IN BIOLOGICAL MICROANALYSIS

    EPA Science Inventory

    Oxygen ion beam sputter etching used in SIMS has been shown to produce morphologic effects which have similarities and differences in comparison to rf plasma etching of biological specimens. Sputter yield variations resulting from structural microheterogeneity are illustrated (e....

  13. Plasma electron temperature and the entropy effect on hydrogen production

    NASA Astrophysics Data System (ADS)

    Chakartnarodom, Parinya

    The thesis is that the interaction between the microwave induced electric field and a conductive material will produce plasma with high effective temperature such that it is thermodynamically and kinetically possible to produce small molecules from large molecules. The high effective temperature increases the potency of the entropy term such that small molecules are produced from large molecules even though the enthalpy for the process is positive. This hypothesis will be tested in several reactions for which the entropy change is positive. The plasma enhanced chemical reactions examined here may also be important in the practical application of alternative fuel production. The specific reactions of interest to this thesis are: (1) H 2O→H2 + 1/2 O2; DeltaGo ( kJ) = 247.5--0.056T, (2) 1/2 N2 + H2O→ H2 + NO; DeltaGo (kJ) = 338.45--0.069T, (3) C + H2O →Fe H2 + CO; Delta Go(kJ) = 135.8--0.143 T, (4) C6H 10O5 → 5H2 + C + 5CO; DeltaGo( kJ) = 711.3--2.48T. Experiments are carried out to examine the chemical species present within the plasma by the optical emission spectrometer (OES) and in the resultant gas outflow by the flue gas analyzer as a function of incoming gas composition and composition of the solid materials at the point of plasma initiation. The chemical and plasma reactions observed experimentally will be compared to thermodynamic calculations as a method to test the hypothesis. In addition, hydrogen production from water and from water and nitrogen at elevated effective temperature produces products, which recombine with negative free energy change at lower temperatures. Based on our initial results, it is also necessary to hypothesize that spatiotemporal plasma discharges can produce molecular hydrogen and an associated oxidant at an elevated effective temperature such that the mixture is 'quenched' to a lower temperature where said mixture is kinetically stabilized against spontaneous recombination. In all experiments, the results from OES show

  14. Novel Composite Hydrogen-Permeable Membranes for Nonthermal Plasma Reactors for the Decomposition of Hydrogen Sulfide

    SciTech Connect

    Morris Argyle; John Ackerman; Suresh Muknahallipatna; Jerry Hamann; Stanislaw Legowski; Gui-Bing Zhao; Sanil John; Ji-Jun Zhang; Linna Wang

    2007-09-30

    The goal of this experimental project was to design and fabricate a reactor and membrane test cell to dissociate hydrogen sulfide (H{sub 2}S) in a nonthermal plasma and to recover hydrogen (H{sub 2}) through a superpermeable multi-layer membrane. Superpermeability of hydrogen atoms (H) has been reported by some researchers using membranes made of Group V transition metals (niobium, tantalum, vanadium, and their alloys), but it was not achieved at the moderate pressure conditions used in this study. However, H{sub 2}S was successfully decomposed at energy efficiencies higher than any other reports for the high H{sub 2}S concentration and moderate pressures (corresponding to high reactor throughputs) used in this study.

  15. Highly roughened polycaprolactone surfaces using oxygen plasma-etching and in vitro mineralization for bone tissue regeneration: fabrication, characterization, and cellular activities.

    PubMed

    Kim, YongBok; Kim, GeunHyung

    2015-01-01

    Herein, poly(ɛ-caprolactone) (PCL) surfaces were treated to form various roughness values (R(a)=290-445 nm) and polar functional groups on the surfaces using a plasma-etching process, followed by immersion into simulated body fluid (SBF) for apatite formation. The surface morphology, chemical composition, and mean roughness of the plasma-etched PCL surfaces were measured, and various physical and morphological properties (water contact angles, protein absorption ability, and crystallite size of the apatite layer) of the in vitro mineralized PCL surfaces were evaluated. The roughened PCL surface P-3, which was treated with a sufficient plasma exposure time (4 h), achieved homogeneously distributed apatite formation after soaking in SBF for 7 days, as compared with other surfaces that were untreated or plasma-treated for 30 min or 2 h. Furthermore, to demonstrate their feasibility as a biomimetic surface, pre-osteoblast cells (MC3T3-E1) were cultured on the mineralized PCL surfaces, and cell viability, DAPI-phalloidin fluorescence assay, and alizarin red-staining of the P-3 surface were highly improved compared to the P-1 surface treated with a 30-min plasma exposure time; compared to untreated mineralized PCL surface (N-P), P-3 showed even greater improvements in cell viability and DAPI-phalloidin fluorescence assay. Based on these results, we found that the mineralized PCL surface supplemented with the appropriate plasma treatment can be implicitly helpful to achieve rapid hard tissue regeneration. PMID:25486326

  16. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  17. Negative hydrogen ion production in a helicon plasma source

    SciTech Connect

    Santoso, J. Corr, C. S.; Manoharan, R.; O'Byrne, S.

    2015-09-15

    In order to develop very high energy (>1 MeV) neutral beam injection systems for applications, such as plasma heating in fusion devices, it is necessary first to develop high throughput negative ion sources. For the ITER reference source, this will be realised using caesiated inductively coupled plasma devices, containing either hydrogen or deuterium discharges, operated with high rf input powers (up to 90 kW per driver). It has been suggested that due to their high power coupling efficiency, helicon devices may be able to reduce power requirements and potentially obviate the need for caesiation due to the high plasma densities achievable. Here, we present measurements of negative ion densities in a hydrogen discharge produced by a helicon device, with externally applied DC magnetic fields ranging from 0 to 8.5 mT at 5 and 10 mTorr fill pressures. These measurements were taken in the magnetised plasma interaction experiment at the Australian National University and were performed using the probe-based laser photodetachment technique, modified for the use in the afterglow of the plasma discharge. A peak in the electron density is observed at ∼3 mT and is correlated with changes in the rf power transfer efficiency. With increasing magnetic field, an increase in the negative ion fraction from 0.04 to 0.10 and negative ion densities from 8 × 10{sup 14 }m{sup −3} to 7 × 10{sup 15 }m{sup −3} is observed. It is also shown that the negative ion densities can be increased by a factor of 8 with the application of an external DC magnetic field.

  18. X-ray photoelectron spectroscopic study of Ge2Sb2Te5 etched by fluorocarbon inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Kang, S.-K.; Oh, J. S.; Park, B. J.; Kim, S. W.; Lim, J. T.; Yeom, G. Y.; Kang, C. J.; Min, G. J.

    2008-07-01

    X-ray photoelectron spectroscopy was used to determine the level of surface fluorination damage of Ge2Sb2Te5 (GST) etched by fluorocarbon gases at different F/C ratios. When blank GST was etched, the gas with a higher F/C ratio produced a thinner C-F polymer on the etched surface but fluorinated Ge, Sb, and Te compounds were observed in the remaining GST. When the sidewall of the etched GST features was investigated, a thicker fluorinated layer was observed on the GST sidewall etched by the higher F/C ratio gas, indicating more fluorination due to the difficulty in preventing F diffusion into the GST through the thinner C-F layer.

  19. Status of the GEC RF Reference Cell/laser diagnostics of plasma etching discharges

    SciTech Connect

    Hargis, P.J. Jr.; Greenerg, K.E.; Miller, P.A.

    1991-01-01

    The Gaseous Electronics Conference (GEC) RF Reference Cell was developed to enhance studies of radiofrequency (rf) discharge systems analogous to those used to fabricate microelectronic devices. The Reference Cell concept includes both a standard discharge-chamber design and a set of diagnostic tools that can be used to verify that different Cells behave similarly. Voltage and current measurements in Reference Cells in the United States show that, with proper care, plasmas that behave in a similar manner can be generated in different Cells. The versatility of the Reference Cell is illustrated by results on the use of planar laser-induced fluorescence imaging to obtain two-dimensional spatial profiles of SO{sub 2} in an SF{sub 6}/O{sub 2} rf discharge. 4 refs., 5 figs.

  20. Ultralow field emission from thinned, open-ended, and defected carbon nanotubes by using microwave hydrogen plasma processing

    NASA Astrophysics Data System (ADS)

    Deng, Jian-Hua; Cheng, Lin; Wang, Fan-Jie; Yu, Bin; Li, Guo-Zheng; Li, De-Jun; Cheng, Guo-An

    2015-01-01

    Ultralow field emission is achieved from carbon nanotubes (CNTs) by using microwave hydrogen plasma processing. After the processing, typical capped CNT tips are removed, with thinned, open-ended, and defected CNTs left. Structural analyses indicate that the processed CNTs have more SP3-hybridized defects as compared to the pristine ones. The morphology of CNTs can be readily controlled by adjusting microwave powers, which change the shape of CNTs by means of hydrogen plasma etching. Processed CNTs with optimal morphology are found to have an ultralow turn-on field of 0.566 V/μm and threshold field of 0.896 V/μm, much better than 0.948 and 1.559 V/μm of the as-grown CNTs, respectively. This improved FE performance is ascribed to the structural changes of CNTs after the processing. The thinned and open-ended shape of CNTs can facilitate electron tunneling through barriers and additionally, the increased defects at tube walls can serve as new active emission sites. Furthermore, our plasma processed CNTs exhibit excellent field emission stability at a large emission current density of 10.36 mA/cm2 after being perfectly aged, showing promising prospects in applications as high-performance vacuum electron sources.

  1. Modeling hydrogen isotope behavior in fusion plasma-facing components

    NASA Astrophysics Data System (ADS)

    Hu, Alice; Hassanein, Ahmed

    2014-03-01

    In this work, we focus on understanding hydrogen isotope retention in plasma-facing materials in fusion devices. Three common simulation methods are usually used to study this problem that includes Monte Carlo, molecular dynamics, and numerical/analytical methods. A system of partial differential equations describing deuterium behavior in tungsten under various conditions is solved numerically to explain recent data compared to other methods. The developed model of hydrogen retention in metals includes classic, intercrystalline and trapped-induced Gorsky effects. The bombardment and depth profile of 200 eV deuterium in single crystal tungsten are simulated and compared with recent work. The total deuterium retention at various temperatures and fluences are also calculated and compared with available data. The results are in reasonable agreement with data and therefore, this model can be used to estimate deuterium inventory and recovery in future fusion devices.

  2. Positive ion polymerization in hydrogen diluted silane plasmas

    SciTech Connect

    Nunomura, S.; Kondo, M.

    2008-12-08

    Mass spectra of positive ions (cations) and neutrals have been measured in hydrogen diluted silane plasmas at gas pressures of 0.1-10 Torr. The mass spectrum of ions changes with the pressure, while that of neutrals maintains a similar shape. The dominant ion species varies from a hydrogen ion group at < or approx. 0.5 Torr to a monosilicon hydride ion group at {approx_equal}0.5-1 Torr and polysilicon hydride ion groups at > or approx. 1 Torr, which is determined from ionization channels and consecutive ion-molecule reactions. The ion bombardment is suppressed with the pressure, from several tens of eV at < or approx. 1 Torr to a few eV at > or approx. 7 Torr.

  3. Atomic layer etching of Al2O3 using sequential, self-limiting thermal reactions with Sn(acac)2 and hydrogen fluoride.

    PubMed

    Lee, Younghee; George, Steven M

    2015-02-24

    The atomic layer etching (ALE) of Al2O3 was demonstrated using sequential, self-limiting thermal reactions with tin(II) acetylacetonate (Sn(acac)2) and hydrogen fluoride (HF) as the reactants. The Al2O3 samples were Al2O3 atomic layer deposition (ALD) films grown using trimethylaluminum and H2O. The HF source was HF-pyridine. Al2O3 was etched linearly with atomic level precision versus number of reactant cycles. The Al2O3 ALE was monitored at temperatures from 150 to 250 °C. Quartz crystal microbalance (QCM) studies revealed that the sequential Sn(acac)2 and HF reactions were self-limiting versus reactant exposure. QCM measurements also determined that the mass change per cycle (MCPC) increased with temperature from -4.1 ng/(cm(2) cycle) at 150 °C to -18.3 ng/(cm(2) cycle) at 250 °C. These MCPC values correspond to etch rates from 0.14 Å/cycle at 150 °C to 0.61 Å/cycle at 250 °C based on the Al2O3 ALD film density of 3.0 g/cm(3). X-ray reflectivity (XRR) analysis confirmed the linear removal of Al2O3 and measured an Al2O3 ALE etch rate of 0.27 Å/cycle at 200 °C. The XRR measurements also indicated that the Al2O3 films were smoothed by Al2O3 ALE. The overall etching reaction is believed to follow the reaction Al2O3 + 6Sn(acac)2 + 6HF → 2Al(acac)3 + 6SnF(acac) + 3H2O. In the proposed reaction mechanism, the Sn(acac)2 reactant donates acac to the substrate to produce Al(acac)3. The HF reactant allows SnF(acac) and H2O to leave as reaction products. The thermal ALE of many other metal oxides using Sn(acac)2 or other metal β-diketonates, together with HF, should be possible by a similar mechanism. This thermal ALE mechanism may also be applicable to other materials such as metal nitrides, metal phosphides, metal sulfides and metal arsenides. PMID:25604976

  4. Modeling of Stark-Zeeman Lines in Magnetized Hydrogen Plasmas

    NASA Astrophysics Data System (ADS)

    Rosato, J.; Bufferand, H.; Capes, H.; Koubiti, M.; Godbert-Mouret, L.; Marandet, Y.; Stamm, R.

    2015-12-01

    The action of electric and magnetic fields on atomic species results in a perturbation of the energy level structure, which alters the shape of spectral lines. In this work, we present the Zeeman-Stark line shape simulation method and perform new calculations of hydrogen Lyman and Balmer lines, in the framework of magnetic fusion research. The role of the Zeeman effect, fine structure and the plasma's non-homogeneity along the line-of-sight are investigated. Under specific conditions, our results are applicable to DA white dwarf atmospheres.

  5. Electrical properties of Hg1-xCdxTe by different etching techniques

    NASA Astrophysics Data System (ADS)

    Chen, X. T.; Qiao, H.; Liu, X. Y.; Yang, K. J.

    2015-11-01

    Effects on the electrical properties of HgCdTe photoconductive devices etched by inductively coupled plasma (ICP) based on CH4-Ar mixture, ion beam milling (IBM) and bromine-hydrogen bromide solution (Br2/HBr) have been investigated. Magnetic-field-dependent Hall measurement and optoelectronic performance measurement at liquid nitrogen temperature were performed. Mobility spectrum analysis (MSA) and multicarrier fitting (MCF) were applied to evaluate the carrier characteristics. Sample etched by ICP indicated a higher mobility and the carrier scattering mechanism was dominated by polar optical phonon (POP) which could lead to superior detector performance accordingly. Meanwhile, sample etched by IBM was found to have large amount of electron concentration and sample etched by Br2/HBr showed a very low mobility. The dominant mechanism of Br2/HBr etched sample was ionized impurity scattering for the carriers which meant inferior resultant detector performance.

  6. Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

    SciTech Connect

    Tasaka, Akimasa; Kotaka, Yuki; Oda, Atsushi; Saito, Morihiro; Tojo, Tetsuro; Inaba, Minoru

    2014-09-01

    In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the number of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.

  7. Secret of formulating a selective etching or cleaning solution for boron nitride (BN) thin film

    NASA Astrophysics Data System (ADS)

    Hui, Wing C.

    2004-04-01

    Boron nitride thin film has a very unique characteristic of extremely high chemical inertness. Thus, it is a better hard mask than silicon nitride for aggressive etching solutions, such as the isotropic HF/HNO3/CH3COOH (or HNA) etchant for silicon. However, because of its high chemical inertness, it is also difficult to remove it. Plasma etching with Freon gases can etch the boron nitride film, but it is unselective to silicon, silicon dioxide or silicon nitride. Cleaning up the boron nitride film with plasma etching will usually leave a damaged or foggy surface. A special wet chemical solution has been developed for etching or cleaning boron nitride film selectively. It can etch boron nitride, but not the coatings or substrates of silicon, silicon nitride and silicon dioxide. It is a very strong oxidizing agent consisting of concentrated sulfuric acid (H2SO4) and hydrogen peroxide (H2O2), but different from the common Piranha Etch. It may be even more interesting to understand the logic or secret behind of how to formulate a new selective etching solution. Various chemical and chemical engineering aspects were considered carefully in our development process. These included creating the right electrochemical potential for the etchant, ensuring large differences in chemical kinetics to make the reactions selective, providing proper mass transfer for removing the by products, etc.

  8. Blistering of implanted crystalline silicon by plasma hydrogenation investigated by Raman scattering spectroscopy

    SciTech Connect

    Duengen, W.; Job, R.; Mueller, T.; Ma, Y.; Fahrner, W. R.; Keller, L. O.; Horstmann, J. T.; Fiedler, H.

    2006-12-15

    Czochralski silicon wafers were implanted with H{sup +} ions at a dose of 1x10{sup 16} cm{sup -2} followed by hydrogen plasma treatments at different temperatures. The minimum hydrogen implantation dose required for silicon surface exfoliation of 3x10{sup 16} H{sup +}/cm{sup 2} without further hydrogen incorporation was reduced to one-third by subsequent plasma hydrogenation. The corresponding local vibrational modes of hydrogen molecules, vacancy-hydrogen complexes, and Si-H bonds on surfaces have been analyzed by micro-Raman scattering spectroscopy to investigate blistering and platelet formation. The surface profile has been studied by atomic force microscopy and scanning electron microscopy. The plasma treated samples were annealed to investigate the mechanism and applicability of the induced exfoliation. <111>-platelet formation occurred below plasma hydrogenation temperatures of 350 deg. C. At temperatures above 450 deg. C, <100>-platelet nucleation induced blistering.

  9. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    PubMed

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C. PMID:27295338

  10. Low-pressure hydrogen plasmas explored using a global model

    NASA Astrophysics Data System (ADS)

    Samuell, Cameron M.; Corr, Cormac S.

    2016-02-01

    Low-pressure hydrogen plasmas have found applications in a variety of technology areas including fusion, neutral beam injection and material processing applications. To better understand these discharges, a global model is developed to predict the behaviour of electrons, ground-state atomic and molecular hydrogen, three positive ion species (H+, \\text{H}2+ , and \\text{H}3+ ), a single negative ion species (H-), and fourteen vibrationally excited states of molecular hydrogen ({{\\text{H}}2}≤ft(\\upsilon =1\\right. -14)). The model is validated by comparison with experimental results from a planar inductively coupled GEC reference cell and subsequently applied to the MAGPIE linear helicon reactor. The MAGPIE reactor is investigated for a range of pressures from 1 to 100 mTorr and powers up to 5 kW. With increasing power between 50 W and 5 kW at 10 mTorr the density of all charged species increases as well as the dissociative fraction while the electron temperature remains almost constant at around 3 eV. For gas pressures from 1-100 mTorr at an input power of 1 kW, the electron density remains almost constant, the electron temperature and dissociative fraction decreases, while \\text{H}3+ density increases in density and also dominates amongst ion species. Across these power and pressure scans, electronegativity remains approximately constant at around 2.5%. The power and pressure determines the dominant ion species in the plasma with \\text{H}3+ observed to dominate at high pressures and low powers whereas H+ tends to be dominant at low pressures and high powers. A sensitivity analysis is used to demonstrate how experimental parameters (power, pressure, reactor wall material, geometry etc) influence individual species’ density as well as the electron temperature. Physical reactor changes including the length, radius and wall recombination coefficient are found to have the largest influence on outputs obtained from the model.

  11. Direct photo-etching of poly(methyl methacrylate) using focused extreme ultraviolet radiation from a table-top laser-induced plasma source

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus

    2007-06-15

    In order to perform material interaction studies with intense extreme ultraviolet (EUV) radiation, a Schwarzschild mirror objective coated with Mo/Si multilayers was adapted to a compact laser-based EUV plasma source (pulse energy 3 mJ at {lambda}=13.5 nm, plasma diameter {approx}300 {mu}m). By 10x demagnified imaging of the plasma a pulse energy density of {approx}75 mJ/cm{sup 2} at a pulse length of 6 ns can be achieved in the image plane of the objective. As demonstrated for poly(methyl methacrylate) (PMMA), photoetching of polymer surfaces is possible at this EUV fluence level. This paper presents first results, including a systematic determination of PMMA etching rates under EUV irradiation. Furthermore, the contribution of out-of-band radiation to the surface etching of PMMA was investigated by conducting a diffraction experiment for spectral discrimination from higher wavelength radiation. Imaging of a pinhole positioned behind the plasma accomplished the generation of an EUV spot of 1 {mu}m diameter, which was employed for direct writing of surface structures in PMMA.

  12. Surface pH and bond strength of a self-etching primer/adhesive system to intracoronal dentin after application of hydrogen peroxide bleach with sodium perborate.

    PubMed

    Elkhatib, Hanadi; Nakajima, Masatoshi; Hiraishi, Noriko; Kitasako, Yuichi; Tagami, Junji; Nomura, Satoshi

    2003-01-01

    This study compared the dentin bond strength of a self-etching primer/adhesive system with dentin surface pH with or without bleaching and observed the morphological changes in bleached dentin treated with a self-etching primer. Dentin disks were prepared from the coronal-labial region of 32 human anterior teeth. The pulpal surfaces of the dentin disks were polished with 600-grit SiC paper under running water. The dentin surfaces on all specimens were bleached with a mixture of 30% hydrogen peroxide and sodium perborate in 100% humidity at 37 degrees C for one week. The bleaching agent was then rinsed off with water for 5, 15 or 30 seconds. All specimens were stored in water at 37 degrees C. Half of the five-second rinsing specimens were stored in water for an additional week. Dentin surface pH with or without bleaching was examined using a pH-imaging microscope (SCHEM-100). A self-etching primer/adhesive system (Clearfil SE Bond) was applied to bleached or unbleached dentin according to the manufacturer's instructions. After 24-hour water storage, the bonded specimens were prepared for microtensile testing. Microtensile bond strength (microTBS) to dentin was measured using a universal-testing machine (EZ test, Shimadzu, Japan) at a crosshead speed of 1.0 mm/minute. Data were analyzed by one-way ANOVA and Scheffe's test (alpha=0.05). The pH values of the dentin surfaces of the 5 and 15 second rinsing groups were significantly higher than the control group (p<0.05), while the 30-second rinsing and one-week water storage groups had similar surface pH values to the control group (p<0.05). The microTBS of 5, 15 and 30 second rinsing specimens after bleaching were significantly lower than the control specimens (p<0.05). However, after one-week of water storage, the microTBS returned to the control group. The application of a bleaching agent increased the pH value of the dentin surface and decreased the bond strength of the self-etching primer/adhesive system. One

  13. Analysis of hydrogen plasma in a microwave plasma chemical vapor deposition reactor

    NASA Astrophysics Data System (ADS)

    Shivkumar, G.; Tholeti, S. S.; Alrefae, M. A.; Fisher, T. S.; Alexeenko, A. A.

    2016-03-01

    The aim of this work is to build a numerical model of hydrogen plasma inside a microwave plasma chemical vapor deposition system. This model will help in understanding and optimizing the conditions for the growth of carbon nanostructures. A 2D axisymmetric model of the system is implemented using the finite element high frequency Maxwell solver and the heat transfer solver in COMSOL Multiphysics. The system is modeled to study variation in parameters with reactor geometry, microwave power, and gas pressure. The results are compared with experimental measurements from the Q-branch of the H2 Fulcher band of hydrogen using an optical emission spectroscopy technique. The parameter γ in Füner's model is calibrated to match experimental observations at a power of 500 W and 30 Torr. Good agreement is found between the modeling and experimental results for a wide range of powers and pressures. The gas temperature exhibits a weak dependence on power and a strong dependence on gas pressure. The inclusion of a vertical dielectric pillar that concentrates the plasma increases the maximum electron temperature by 70%, the maximum gas temperature by 50%, and the maximum electron number density by 70% when compared to conditions without the pillar at 500 W and 30 Torr. Experimental observations also indicate intensified plasma with the inclusion of a pillar.

  14. Plasma-screening effects on the electron-impact excitation of hydrogenic ions in dense plasmas

    NASA Technical Reports Server (NTRS)

    Jung, Young-Dae

    1993-01-01

    Plasma-screening effects are investigated on electron-impact excitation of hydrogenic ions in dense plasmas. Scaled cross sections Z(exp 4) sigma for 1s yields 2s and 1s yields 2p are obtained for a Debye-Hueckel model of the screened Coulomb interaction. Ground and excited bound wave functions are modified in the screened Coulomb potential (Debye-Hueckel model) using the Ritz variation method. The resulting atomic wave functions and their eigenenergies agree well with the numerical and high-order perturbation theory calculations for the interesting domain of the Debye length not less than 10. The Born approximation is used to describe the continuum states of the projectile electron. Plasma screening effects on the atomic electrons cannot be neglected in the high-density cases. Including these effects, the cross sections are appreciably increased for 1s yields 2s transitions and decreased for 1s yields 2p transitions.

  15. Nanofabrication of sharp diamond tips by e-beam lithography and inductively coupled plasma reactive ion etching.

    SciTech Connect

    Moldovan, N.; Divan, R.; Zeng, H.; Carlisle, J. A.; Advanced Diamond Tech.

    2009-12-07

    Ultrasharp diamond tips make excellent atomic force microscopy probes, field emitters, and abrasive articles due to diamond's outstanding physical properties, i.e., hardness, low friction coefficient, low work function, and toughness. Sharp diamond tips are currently fabricated as individual tips or arrays by three principal methods: (1) focused ion beam milling and gluing onto a cantilever of individual diamond tips, (2) coating silicon tips with diamond films, or (3) molding diamond into grooves etched in a sacrificial substrate, bonding the sacrificial substrate to another substrate or electrodepositing of a handling chip, followed by dissolution of the sacrificial substrate. The first method is tedious and serial in nature but does produce very sharp tips, the second method results in tips whose radius is limited by the thickness of the diamond coating, while the third method involves a costly bonding and release process and difficulties in thoroughly filling the high aspect ratio apex of molding grooves with diamond at the nanoscale. To overcome the difficulties with these existing methods, this article reports on the feasibility of the fabrication of sharp diamond tips by direct etching of ultrananocrystalline diamond (UNCD{reg_sign}) as a starting and structural material. The UNCD is reactive ion etched using a cap-precursor-mask scheme. An optimized etching recipe demonstrates the formation of ultrasharp diamond tips ({approx} 10 nm tip radius) with etch rates of 650 nm/min.

  16. Effect of pre-deposition RF plasma etching on wafer surface morphology and crystal orientation of piezoelectric AlN thin films.

    PubMed

    Felmetsger, V; Mikhov, M; Laptev, P

    2015-02-01

    In this work, we describe the design and operation of a planarized capacitively coupled RF plasma module and investigate the effects of non-reactive RF plasma etching on Si (100) wafer surface morphology and crystal orientation of Al bottom electrodes and subsequently deposited AlN films. To ensure formation of highly (111) textured Al electrode, a thin 25-nm AlN seed layer was grown before the Al deposition. The seed layer's orientation efficiency improved with increasing the RF power from 70 to 300 W and resulted in narrowing the Al (111) rocking curves. AFM and XRD data have shown that crystal orientations of both the electrode and reactively sputtered AlN film are considerably improved when the substrate micro roughness is reduced from an ordinary level of a few nanometers to atomic level corresponding to root mean square roughness as low as about 0.2 to 0.3 nm. The most perfectly crystallized film stacks of 100-nm Al and 500-nm AlN were obtained in this work using etching in Ar plasma optimized to create an atomically smooth, epi-ready Si surface morphology that enables superior AlN seed layer nucleation conditions. X-ray rocking curves around the Al (111) and AlN (0002) diffraction peaks exhibited extremely low FWHM values of 0.68° and 1.05°, respectively. PMID:25643087

  17. Effect of input power and gas pressure on the roughening and selective etching of SiO2/Si surfaces in reactive plasmas

    NASA Astrophysics Data System (ADS)

    Zhong, X. X.; Tam, E.; Huang, X. Z.; Colpo, P.; Rossi, F.; Ostrikov, K.

    2010-09-01

    We report on the application low-temperature plasmas for roughening Si surfaces which is becoming increasingly important for a number of applications ranging from Si quantum dots to cell and protein attachment for devices such as "laboratory on a chip" and sensors. It is a requirement that Si surface roughening is scalable and is a single-step process. It is shown that the removal of naturally forming SiO2 can be used to assist in the roughening of the surface using a low-temperature plasma-based etching approach, similar to the commonly used in semiconductor micromanufacturing. It is demonstrated that the selectivity of SiO2/Si etching can be easily controlled by tuning the plasma power, working gas pressure, and other discharge parameters. The achieved selectivity ranges from 0.4 to 25.2 thus providing an effective means for the control of surface roughness of Si during the oxide layer removal, which is required for many advance applications in bio- and nanotechnology.

  18. Effect of input power and gas pressure on the roughening and selective etching of SiO{sub 2}/Si surfaces in reactive plasmas

    SciTech Connect

    Zhong, X. X.; Huang, X. Z.; Tam, E.; Ostrikov, K.; Colpo, P.; Rossi, F.

    2010-09-15

    We report on the application low-temperature plasmas for roughening Si surfaces which is becoming increasingly important for a number of applications ranging from Si quantum dots to cell and protein attachment for devices such as 'laboratory on a chip' and sensors. It is a requirement that Si surface roughening is scalable and is a single-step process. It is shown that the removal of naturally forming SiO{sub 2} can be used to assist in the roughening of the surface using a low-temperature plasma-based etching approach, similar to the commonly used in semiconductor micromanufacturing. It is demonstrated that the selectivity of SiO{sub 2}/Si etching can be easily controlled by tuning the plasma power, working gas pressure, and other discharge parameters. The achieved selectivity ranges from 0.4 to 25.2 thus providing an effective means for the control of surface roughness of Si during the oxide layer removal, which is required for many advance applications in bio- and nanotechnology.

  19. Quantum states of confined hydrogen plasma species: Monte Carlo calculations

    NASA Astrophysics Data System (ADS)

    Micca Longo, G.; Longo, S.; Giordano, D.

    2015-12-01

    The diffusion Monte Carlo method with symmetry-based state selection is used to calculate the quantum energy states of \\text{H}2+ confined into potential barriers of atomic dimensions (a model for these ions in solids). Special solutions are employed, permitting one to obtain satisfactory results with rather simple native code. As a test case, {{}2}{{\\Pi}u} and {{}2}{{\\Pi}g} states of \\text{H}2+ ions under spherical confinement are considered. The results are interpreted using the correlation of \\text{H}2+ states to atomic orbitals of H atoms lying on the confining surface and perturbation calculations. The method is straightforwardly applied to cavities of any shape and different hydrogen plasma species (at least one-electron ones, including H) for future studies with real crystal symmetries.

  20. Hydrogen Balmer-alpha broadening in dense plasmas.

    PubMed

    Alexiou, S; Leboucher-Dalimier, E

    1999-09-01

    This work presents a theoretical analysis of experimental results for the hydrogen Balmer-alpha line in dense plasmas, with electron densities between 2x10(18) and 9x10(18) e/cm(3) A simulation of both electrons and ions is employed to produce reliable theoretical widths. These results are essentially in agreement with standard theory results and, for the most part, disagree with the experimental results. Consequently, either mechanisms not accounted for in the theoretical results (such as quadrupoles) are more important than previously thought at these densities, or else there is a problem in the experimental data (such as a possible reabsorption, which is not ruled out by the experimental data). PMID:11970167

  1. Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures

    NASA Astrophysics Data System (ADS)

    Constantine, C.; Barratt, C.; Pearton, S. J.; Ren, F.; Lothian, J. R.

    1992-12-01

    Electron cyclotron resonance microwave (2.45 GHz) discharges of Cl2/CH4/H2 with low additional dc biases (-80 to -150 V) on the sample are shown to provide smooth, anisotropic dry etching of InP at ˜150 °C. Rates of 2500 Å min-1 are obtained at a pressure of 0.5 mTorr and ˜80 V dc bias. SiO2 masks show no discernible erosion under these conditions, yielding a process that is extremely well suited for laser mesa fabrication. The CH4 addition promotes the anisotropy of the etching by a sidewall polymer mechanism, while the H2 addition significantly enhances the etch rate at low pressure.

  2. Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

    NASA Technical Reports Server (NTRS)

    Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

    2016-01-01

    The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

  3. On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices.

    PubMed

    Lim, Nomin; Efremov, Alexander; Yeom, Geun Young; Kwon, Kwang-Ho

    2014-12-01

    The study of etching characteristics and mechanisms for HfO2 and Si in CF4/O2/Ar and CHF3/O2/Ar inductively-coupled plasmas was carried out. The etching rates of HfO2 thin films as well as the HfO2/Si etching selectivities were measured as functions of Ar content in a feed gas (0-50% Ar) at fixed fluorocarbon gas content (50%), gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters as well as the differences in plasma chemistries for CF4- and CHF3-based plasmas were analyzed using Langmuir probe diagnostics and 0-dimensional plasma modeling. It was found that, in both gas systems, the non-monotonic (with a maximum at about 15-20% Ar) HfO2 etching rate does not correlate with monotonic changes of F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the HfO2 etching process is affected by the factors determining the formation and decomposition kinetics of the fluorocarbon polymer layer. These factor are the fluxes of CF(x) (x = 1, 2) radicals, O atoms and H atoms. PMID:25971118

  4. Impact of hydrogen isotope species on microinstabilities in helical plasmas

    NASA Astrophysics Data System (ADS)

    Nakata, Motoki; Nunami, Masanori; Sugama, Hideo; Watanabe, Tomo-Hiko

    2016-07-01

    The impact of isotope ion mass on ion-scale and electron-scale microinstabilities such as ion temperature gradient (ITG) mode, trapped electron mode (TEM), and electron temperature gradient (ETG) mode in helical plasmas are investigated by using gyrokinetic Vlasov simulations with a hydrogen isotope and real-mass kinetic electrons. Comprehensive scans for the equilibrium parameters and magnetic configurations clarify the transition from ITG mode to TEM instability, where a significant TEM enhancement is revealed in the case of inward-shifted plasma compared to that in the standard configuration. It is elucidated that the ion-mass dependence on the ratio of the electron–ion collision frequency to the ion transit one, i.e. {ν\\text{ei}}/{ω\\text{ti}}\\propto {{≤ft({{m}\\text{i}}/{{m}\\text{e}}\\right)}1/2} , leads to a stabilization of the TEM for heavier isotope ions. The ITG growth rate indicates a gyro-Bohm-like ion-mass dependence, where the mixing-length estimate of diffusivity yields γ /k\\bot2\\propto m\\text{i}1/2 . On the other hand, a weak isotope dependence of the ETG growth rate is identified. A collisionality scan also reveals that the TEM stabilization by the isotope ions becomes more significant for relatively higher collisionality in a banana regime.

  5. Correlation of H/sup -/ production and the work function of a surface in a hydrogen plasma

    SciTech Connect

    Wada, M.

    1983-03-01

    Surface-plasma negative hydrogen ion sources are being developed as possible parts for future neutral beam systems. In these ion sources, negative hydrogen ions (H/sup -/) are produced at low work function metal surfaces immersed in hydrogen plasmas. To investigate the correlation between the work function and the H/sup -/ production at the surface with a condition similar to the one in the actual plasma ion source, these two parameters were simultaneously measured in the hydrogen plasma environment.

  6. Rapid, Non-Mechanical, Damage Free Figuring Of Optical Surfaces Using Plasma Assisted Chemical Etching (PACE): Part Ii Theory & Process Control

    NASA Astrophysics Data System (ADS)

    Zarowin, C. B.; Bollinger, L. D.

    1989-01-01

    We describe an application of Plasma Assisted Chemical Etching (PACE) to rapid and controllable figuring and smoothing of optical surfaces without mechanical contact. This removes the usual constraints on the design of optical elements imposed by mechanical pro-cesses, such as substrate deformation, edge distortion and subsurface damage or contamination. This process employs a process originally developed to pattern microelectronic circuits by ion enhanced chemical etching of a solid (Si02, Si, Al, Au, etc.) through a relatively nonerodeable photolithographically patterned mask1,-2. The PACE process shapes the optical surface by removing material in a small area under a confined reactive gas plasma (a "puck") moved over this surface. Rates of removal of such processes in microelectronic applications are as high as 10 pm per minute and are very accurately controllable and repeatable. The removal "footprint" of PACE may be varied during the process and it inherently smooths or polishes while exposing a virgin surface free of process generated contamination and subsurface damage. It can operate in two modes: (1) in "contact" with the plasma, where the chemical reaction is driven by the kinetic energy given up at the reacting surface by short lived species such as ions; and (2) downstream of the plasma, by the stored energy freed at the surface by longer lived species such as excited metastable neutrals. Since control of this process is so important to this application, we sketch the generic physics and chemi hi stry1,2 of the PACE figuring and smoothing process, identifying the quantitative relations between the plasma and chemical parameters that control it:rf power density reactive gas pressure reactive gas flow the reactor surface temperatures and the pertinent transport chemistry.

  7. Evolution of metal-compound residues on the walls of plasma etching reactor and their effect on critical dimensions of high-k/metal gate

    SciTech Connect

    Iwakoshi, Takehisa; Ono, Tetsuo; Aoyama, Takayuki; Nara, Yasuo; Ohji, Yuzuru

    2009-05-15

    It was found that critical dimensions of high-k/metal gates obey the multivariate linear approximation with the precision of 3{sigma}={+-}0.86 nm, whose explanatory variables are amounts of metal compounds remaining on the plasma reactor walls. To measure their amounts, the authors assumed they are proportional to amounts of atoms sputtered out by Ar plasma and falling onto a Si wafers placed on a wafer stage. In this study, effects of metal compounds of W, Ti, Ta, and Hf, which are used to construct full-metal/high-k gates, were measured. It was found that Ti and Ta compounds dominate the fluctuation of critical dimensions and the dependency of their amount on wafer numbers being etched obeys a simple difference equation. From these results, they can estimate and minimize the fluctuations of critical dimensions in mass fabrications.

  8. In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

    SciTech Connect

    Marchack, Nathan; Kim, Taeseung; Chang, Jane P.; Blom, Hans-Olof

    2015-05-15

    The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy and the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.

  9. Operating characteristics of a hydrogen-argon plasma torch for supersonic combustion applications

    NASA Technical Reports Server (NTRS)

    Barbi, E.; Mahan, J. R.; O'Brien, W. F.; Wagner, T. C.

    1989-01-01

    The residence time of the combustible mixture in the combustion chamber of a scramjet engine is much less than the time normally required for complete combustion. Hydrogen and hydrocarbon fuels require an ignition source under conditions typically found in a scramjet combustor. Analytical studies indicate that the presence of hydrogen atoms should greatly reduce the ignition delay in this environment. Because hydrogen plasmas are prolific sources of hydrogen atoms, a low-power, uncooled hydrogen plasma torch has been built and tested to evaluate its potential as a possible flame holder for supersonic combustion. The torch was found to be unstable when operated on pure hydrogen; however, stable operation could be obtained by using argon as a body gas and mixing in the desired amount of hydrogen. The stability limits of the torch are delineated and its electrical and thermal behavior documented. An average torch thermal efficiency of around 88 percent is demonstrated.

  10. Operating characteristics of a hydrogen-argon plasma torch for supersonic combustion applications

    SciTech Connect

    Barbi, E.; Mahan, J.R.; O'brien, W.F.; Wagner, T.C.

    1989-04-01

    The residence time of the combustible mixture in the combustion chamber of a scramjet engine is much less than the time normally required for complete combustion. Hydrogen and hydrocarbon fuels require an ignition source under conditions typically found in a scramjet combustor. Analytical studies indicate that the presence of hydrogen atoms should greatly reduce the ignition delay in this environment. Because hydrogen plasmas are prolific sources of hydrogen atoms, a low-power, uncooled hydrogen plasma torch has been built and tested to evaluate its potential as a possible flame holder for supersonic combustion. The torch was found to be unstable when operated on pure hydrogen; however, stable operation could be obtained by using argon as a body gas and mixing in the desired amount of hydrogen. The stability limits of the torch are delineated and its electrical and thermal behavior documented. An average torch thermal efficiency of around 88 percent is demonstrated. 10 references.

  11. TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

    NASA Astrophysics Data System (ADS)

    Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

    2009-03-01

    An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The

  12. Etching characteristics and mechanism of SiN(x) films for nano-devices in CH2F2/O2/Ar inductively coupled plasma: effect of O2 mixing ratio.

    PubMed

    Son, Jinyoung; Efremov, Alexander; Yun, Sun Jin; Yeom, Geun Young; Kwonl, Kwang-ho

    2014-12-01

    Etching characteristics and mechanisms of low-temperature SiN(x) thin films for nano-devices in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN(x) thin films as well as the etching selectivities over Si and photoresist were measured in the range of 25-75% O2 in a feed gas at fixed CH2F2 content (25%), gas pressure (6 mTorr), input power (900 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters were analyzed using the Langmuir probe diagnostics and optical emission spectroscopy. The chemical states of the etched surfaces were examined by the X-ray photoelectron spectroscopy. It was found that the non-monotonic (with a maximum at about 50-60% O2) SiN(x) etching rate does not correlate with monotonically decreasing F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the SiN(x) etching process is also controlled by the O and H atom fluxes through the destruction of the fluorocarbon polymer layer. PMID:25971095

  13. Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Plasmas

    NASA Astrophysics Data System (ADS)

    Lee, Hack Joo; Kwon, Bong Soo; Kim, Hyun Woo; Kim, Seon Il; Yoo, Dong-Geun; Boo, Jin-Hyo; Lee, Nae-Eung

    2008-08-01

    ZnO and Al-doped ZnO (AZO) were etched in Cl2/CH4/H2/Ar (Cl2-based) and BCl3/CH4/H2/Ar (BCl3-based), inductively coupled plasmas (ICPs) and their etching characteristics were compared by varying the Cl2/(Cl2+CH4) and BCl3/(BCl3+CH4) flow ratios, top electrode power and dc self-bias voltage (Vdc). The etch rates of both ZnO and AZO layers were higher in the Cl2-based chemistry than in the BCl3-based chemistry. The AZO and ZnO etch rates were increased and decreased, respectively, with increasing Cl2 or BCl3 flow ratio. Optical emission measurements of the radical species in the plasma and surface binding states by optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS), respectively, indicated that, with increasing Cl2 or BCl3 flow ratio; the effective removal of Al in the AZO enhanced the AZO etch rate, whereas the reduced removal of Zn by the Zn(CHx)y products reduced the ZnO etch rate.

  14. Temperature of hydrogen radio frequency plasma under dechlorination process of polychlorinated biphenyls

    SciTech Connect

    Inada, Y. Abe, K.; Kumada, A.; Hidaka, K.; Amano, K.; Itoh, K.; Oono, T.

    2014-10-27

    It has been reported that RF (radio frequency) hydrogen plasmas promote the dechlorination process of PCBs (polychlorinated biphenyls) under irradiation of MW (microwave). A relative emission intensity spectroscope system was used for single-shot imaging of two-dimensional temperature distributions of RF hydrogen plasmas generated in chemical solutions with several mixing ratios of isopropyl alcohol (IPA) and insulation oil under MW irradiation. Our experimental results showed that the plasma generation frequencies for the oil-contaminating solutions were higher than that for the pure IPA solution. In addition, the plasma temperature in the compound liquids including both oil and IPA was higher than that in the pure IPA and oil solutions. A combination of the plasma temperature measurements and plasma composition analysis indicated that the hydrogen radicals generated in a chemical solution containing the equal volumes of IPA and oil were almost the same amounts of H and H{sup +}, while those produced in the other solutions were mainly H.

  15. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  16. Simplified Etching

    ERIC Educational Resources Information Center

    Saranovitz, Norman S.

    1969-01-01

    The process for making a celluoid etching (drypaint technique) is feasible for the high school art room because the use of acid is avoided. The procedure outlined includes; 1) preparation of the plate, 2) inking the plate, 3) printing the plate, 4) tools necessary for the preceding. (BF)

  17. Hydrogen Balmer Series Self-Absorption Measurement in Laser-Induced Air Plasma

    NASA Astrophysics Data System (ADS)

    Gautam, Ghaneshwar; Parigger, Christian

    2015-05-01

    In experimental studies of laser-induced plasma, we use focused Nd:YAG laser radiation to generate optical breakdown in laboratory air. A Czerny-Turner type spectrometer and an ICCD camera are utilized to record spatially and temporally resolved spectra. Time-resolved spectroscopy methods are employed to record plasma dynamics for various time delays in the range of 0.300 microsecond to typically 10 microsecond after plasma initiation. Early plasma emission spectra reveal hydrogen alpha and ionized nitrogen lines for time delays larger than 0.3 microsecond, the hydrogen beta line emerges from the free-electron background radiation later in the plasma decay for time delays in excess of 1 microsecond. The self-absorption analyses include comparisons of recorded data without and with the use of a doubling mirror. The extent of self-absorption of the hydrogen Balmer series is investigated for various time delays from plasma generation. There are indications of self-absorption of hydrogen alpha by comparison with ionized nitrogen lines at a time delay of 0.3 microsecond. For subsequent time delays, self-absorption effects on line-widths are hardly noticeable, despite the fact of the apparent line-shape distortions. Of interest are comparisons of inferred electron densities from hydrogen alpha and hydrogen beta lines as the plasma decays, including assessments of spatial variation of electron density.

  18. MHD plasma physics in rail accelerators for hydrogen-pellet injection in fusion reactors

    SciTech Connect

    Azzerboni, B.; Becherini, G.; Cardelli, E.; Tellini, A.

    1989-06-01

    In this paper the behavior of the electromagnetic and thermal qualitities in a plasma arc placed between two conducting rails is analyzed. The plasma hydrogen armature drives the hydrogen pellets for the refueling of magnetic fusion reactors. Considering the general equations of electromagnetic and of plasma fluid dynamics and assuming steady-state conditions in a frame which is moving at the same rate as the plasma arc armature, as monodimensional model is deduced. The effects of an applied magnetic field on the behavior of all flow variables are particularly investigated.

  19. A two-dimensional model of the hydrogen plasma for a laser powered rocket

    NASA Technical Reports Server (NTRS)

    Keefer, D.; Crowder, H.; Elkins, R.

    1982-01-01

    A two-dimensional, closed-form model originally developed by Batteh and Keefer (1974) is modified and applied to the absorption of laser radiation by a hydrogen plasma. The model is used to predict the power absorbed by plasmas at one- and ten-atmosphere pressure as a function of laser beam radius. Predicted isotherms are given for one- and ten-atmosphere plasmas, together with thermal loading of the absorption chamber wall. The model is also used in predicting the laser power required to sustain a hydrogen plasma as a function of the absorption coefficient.

  20. Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH{sub 2}F{sub 2}/H{sub 2} plasmas

    SciTech Connect

    Kim, J. S.; Kwon, B. S.; Heo, W.; Jung, C. R.; Park, J. S.; Shon, J. W.; Lee, N.-E.

    2010-01-15

    A multilevel resist (MLR) structure can be fabricated based on a very thin amorphous carbon (a-C) layer ( congruent with 80 nm) and Si{sub 3}N{sub 4} hard-mask layer ( congruent with 300 nm). The authors investigated the selective etching of the Si{sub 3}N{sub 4} layer using a physical-vapor-deposited (PVD) a-C mask in a dual-frequency superimposed capacitively coupled plasma etcher by varying the process parameters in the CH{sub 2}F{sub 2}/H{sub 2}/Ar plasmas, viz., the etch gas flow ratio, high-frequency source power (P{sub HF}), and low-frequency source power (P{sub LF}). They found that under certain etch conditions they obtain infinitely high etch selectivities of the Si{sub 3}N{sub 4} layers to the PVD a-C on both the blanket and patterned wafers. The etch gas flow ratio played a critical role in determining the process window for infinitely high Si{sub 3}N{sub 4}/PVD a-C etch selectivity because of the change in the degree of polymerization. The etch results of a patterned ArF photoresisit/bottom antireflective coating/SiO{sub x}/PVD a-C/Si{sub 3}N{sub 4} MLR structure supported the idea of using a very thin PVD a-C layer as an etch-mask layer for the Si{sub 3}N{sub 4} hard-mask pattern with a pattern width of congruent with 80 nm and high aspect ratio of congruent with 5.

  1. Inactivation of possible micromycete food contaminants using the low-temperature plasma and hydrogen peroxide

    NASA Astrophysics Data System (ADS)

    Čeřovský, M.; Khun, J.; Rusová, K.; Scholtz, V.; Soušková, H.

    2013-09-01

    The inhibition effect of hydrogen peroxide aerosol, low-temperature plasma and their combinations has been studied on several micromycetes spores. The low-temperature plasma was generated in corona discharges in the open air apparatus with hydrogen peroxide aerosol. Micromycete spores were inoculated on the surface of agar plates, exposed solely to the hydrogen peroxide aerosol, corona discharge or their combination. After incubation the diameter of inhibition zone was measured. The solely positive corona discharge exhibits no inactivation effect, the solely negative corona discharge and solely hydrogen peroxide aerosol exhibit the inactivation effect, however their combinations exhibit to be much more effective. Low-temperature plasma and hydrogen peroxide aerosol present a possible alternative method of microbial decontamination of food, food packages or other thermolabile materials.

  2. Inactivation of possible micromycete food contaminants using the low-temperature plasma and hydrogen peroxide

    SciTech Connect

    Čeřovský, M.; Khun, J.; Rusová, K.; Scholtz, V.; Soušková, H.

    2013-09-15

    The inhibition effect of hydrogen peroxide aerosol, low-temperature plasma and their combinations has been studied on several micromycetes spores. The low-temperature plasma was generated in corona discharges in the open air apparatus with hydrogen peroxide aerosol. Micromycete spores were inoculated on the surface of agar plates, exposed solely to the hydrogen peroxide aerosol, corona discharge or their combination. After incubation the diameter of inhibition zone was measured. The solely positive corona discharge exhibits no inactivation effect, the solely negative corona discharge and solely hydrogen peroxide aerosol exhibit the inactivation effect, however their combinations exhibit to be much more effective. Low-temperature plasma and hydrogen peroxide aerosol present a possible alternative method of microbial decontamination of food, food packages or other thermolabile materials.

  3. Effect of hydrogen plasma pretreatment on the growth of silicon nanowires and their employment as the anode material of lithium secondary batteries.

    PubMed

    Kim, Jung Sub; Byun, Dongjin; Lee, Joong Kee

    2012-02-01

    Silicon nanowires were grown from a silane and argon gas mixture directly on a stainless steel substrate by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) and used without any further treatment as the anode in the fabrication of lithium ion batteries. It was found that suitable pretreatment of the stainless steel substrate was required for the satisfactory growth of the silicon nanowires. In this study, the substrates were polished, etched in HF solution, coated with an aluminum catalyst layer with a thickness of c.a. 10 nm and then treated with a hydrogen plasma before the growth of the silicon nanowires. SEM (Scanning Electron Microscopy) and AFM (Atomic Force Microscopy) analyses showed that the grain size and surface roughness were increased after the hydrogen plasma pretreatment. The electrochemical performance of the silicon nanowires anode was also improved when the aluminum coated stainless steel substrate was exposed to the plasma for 20 min or longer; the initial coulombic efficiency was increased from 69.7% to 82% at a current density of 30 mA cm(-2). PMID:22629972

  4. [The Clinical Application Status and Development Trends of Hydrogen Peroxide Low Temperature Plasma Sterilizers].

    PubMed

    Zhuang, Min; Zheng, Yunxin; Chen, Ying; Hou, Bin; Xu, Zitian

    2016-01-01

    The hydrogen peroxide low temperature plasma sterilization technology solved the problems of thermo-sensitive materials' disinfection and sterilization based on its development and unique characteristics. This paper introduced the researches of clinical application quality control, and showed the hydrogen peroxide low temperature plasma sterilizers were being widely used in hospitals and highly recognized. According to the clinical data and the literatures of the domestic equipment in preliminary application, it could be concluded that the technology maturity of domestic hydrogen peroxide low temperature plasma sterilizers was in a high level. The advantages of using domestic hydrogen peroxide low temperature plasma sterilizers to do disinfection and sterilization included lower cost, safer, faster and non-toxic, etc. Also the management system should be improved and the clinical staff should master the technical essentials, obey the procedures strictly, verify periodically and offer full monitoring to upgrade the quality of sterilization. PMID:27197500

  5. Hydrogen production from alcohol reforming in a microwave ‘tornado’-type plasma

    NASA Astrophysics Data System (ADS)

    Tatarova, E.; Bundaleska, N.; Dias, F. M.; Tsyganov, D.; Saavedra, R.; Ferreira, C. M.

    2013-12-01

    In this work, an experimental investigation of microwave plasma-assisted reforming of different alcohols is presented. A microwave (2.45 GHz) ‘tornado’-type plasma with a high-speed tangential gas injection (swirl) at atmospheric pressure is applied to decompose alcohol molecules, namely methanol, ethanol and propanol, and to produce hydrogen-rich gas. The reforming efficiency is investigated both in Ar and Ar+ water vapor plasma environments. The hydrogen yield dependence on the partial alcohol flux is analyzed. Mass spectrometry and Fourier transform infrared spectroscopy are used to detect the outlet gas products from the decomposition process. Hydrogen, carbon monoxide, carbon dioxide and solid carbon are the main decomposition by-products. A significant increase in the hydrogen production rate is observed with the addition of a small amount of water. Furthermore, optical emission spectroscopy is applied to detect the radiation emitted by the plasma and to estimate the gas temperature and electron density.

  6. Enhancement of the photocatalytic efficiency of WO3 nanoparticles via hydrogen plasma treatment

    NASA Astrophysics Data System (ADS)

    Rahimnejad, Sara; He, Jing Hui; Pan, Feng; Lee, Xue'er; Chen, Wei; Wu, Kai; Xu, Guo Qin

    2014-12-01

    Surface defect engineering is able to effectively enhance the photocatalytic performance of WO3 nanoparticles. In this paper, radio frequency hydrogen plasma was employed to create surface defects on WO3 nanoparticles. X-ray photoelectron spectroscopy (XPS) and electron spin resonance (ESR) analysis confirmed that hydrogen plasma modification increases the density of oxygen vacancies on the surface of WO3. The broadening of characteristic WO3 peaks in Raman spectra indicates the increase of oxygen vacancies by increasing voltage in hydrogen plasma treatment. The sample treated with hydrogen plasma at 20 volts shows enhancement in photocurrent density by an order of magnitude, attributable to the band-gap narrowing and subsequent increase of quantum yield in the visible range. Consistent results were also obtained from photocatalytic O2 evolution from water oxidation.

  7. Hydrogen-dominated plasma, due to silane depletion, for microcrystalline silicon deposition

    SciTech Connect

    Howling, A. A.; Sobbia, R.; Hollenstein, Ch.

    2010-07-15

    Plasma conditions for microcrystalline silicon deposition generally require a high flux of atomic hydrogen, relative to SiH{sub {alpha}=0{yields}3} radicals, on the growing film. The necessary dominant partial pressure of hydrogen in the plasma is conventionally obtained by hydrogen dilution of silane in the inlet flow. However, a hydrogen-dominated plasma environment can also be obtained due to plasma depletion of the silane in the gas mixture, even up to the limit of pure silane inlet flow, provided that the silane depletion is strong enough. At first sight, it may seem surprising that the composition of a strongly depleted pure silane plasma consists principally of molecular hydrogen, without significant contribution from the partial pressure of silane radicals. The aim here is to bring some physical insight by means of a zero-dimensional, analytical plasma chemistry model. The model is appropriate for uniform large-area showerhead reactors, as shown by comparison with a three-dimensional numerical simulations. The SiH{sub {alpha}} densities remain very low because of their rapid diffusion and surface reactivity, contributing to film growth which is the desired scenario for efficient silane utilization. Significant SiH{sub {alpha}} densities due to poor design of reactor and gas flow, on the other hand, would result in powder formation wasting silane. Conversely, hydrogen atoms are not deposited, but recombine on the film surface and reappear as molecular hydrogen in the plasma. Therefore, in the limit of extremely high silane depletion fraction (>99.9%), the silane density falls below the low SiH{sub {alpha}} densities, but only the H radical can eventually reach significant concentrations in the hydrogen-dominated plasma.

  8. Optimum plasma grid bias for a negative hydrogen ion source operation with Cs

    NASA Astrophysics Data System (ADS)

    Bacal, Marthe; Sasao, Mamiko; Wada, Motoi; McAdams, Roy

    2016-02-01

    The functions of a biased plasma grid of a negative hydrogen (H-) ion source for both pure volume and Cs seeded operations are reexamined. Proper control of the plasma grid bias in pure volume sources yields: enhancement of the extracted negative ion current, reduction of the co-extracted electron current, flattening of the spatial distribution of plasma potential across the filter magnetic field, change in recycling from hydrogen atomic/molecular ions to atomic/molecular neutrals, and enhanced concentration of H- ions near the plasma grid. These functions are maintained in the sources seeded with Cs with additional direct emission of negative ions under positive ion and neutral hydrogen bombardment onto the plasma electrode.

  9. Production of hydrogen via conversion of hydrocarbons using a microwave plasma

    NASA Astrophysics Data System (ADS)

    Jasiński, Mariusz; Dors, Mirosław; Nowakowska, Helena; Nichipor, Gerietta V.; Mizeraczyk, Jerzy

    2011-05-01

    In this paper, results of hydrogen production from hydrocarbons in an atmospheric pressure microwave plasma are presented. As sources of hydrogen, both methane CH4 and tetrafluoroethane C2H2F4 were tested. A new waveguide-based nozzleless cylinder-type microwave plasma source was used to convert hydrocarbons into hydrogen. The processed gaseous hydrocarbons were introduced into the plasma by four gas ducts which formed a swirl flow in the plasma reactor. The absorbed microwave power was up to 5 kW. The gas flow rate was up to 212 L min-1. The hydrogen mass yield rate and the corresponding energetic hydrogen mass yield were up to 866 g[H2] h-1 and 577 g [H2] kWh-1 of microwave energy absorbed by the plasma, respectively. These parameters are better than our previous results when nitrogen was used as a swirl gas and much better than those typical for other plasma methods of hydrogen production (electron beam, gliding arc, plasmatron).

  10. Plasma test on industrial diamond powder in hydrogen and air for fracture strength study

    NASA Astrophysics Data System (ADS)

    Chary, Rohit Asuri Sudharshana

    Diamonds are the most precious material all over the world. Ever since their discovery, the desire for natural diamonds has been great; recently, the demand has steeply increased, leading to scarcity. For example, in 2010, diamonds worth $50 billion were marketed. This increased demand has led to discovering alternative sources to replace diamonds. The diamond, being the hardest material on earth, could be replaced with no other material except another diamond. Thus, the industrial or synthetic diamond was invented. Because of extreme hardness is one of diamond's properties, diamonds are used in cutting operations. The fracture strength of diamond is one of the crucial factors that determine its life time as a cutting tool. Glow discharge is one of the techniques used for plasma formation. The glow discharge process is conducted in a vacuum chamber by ionizing gas atoms. Ions penetrate into the atomic structure, ejecting a secondary electron. The objective of this study is to determine the change in fracture strength of industrial diamond powder before and after plasma treatment. This study focuses mainly on the change in crystal defects and crushing strength (CS) of industrial diamond powder after the penetration of hydrogen gas, air and hydrogen-air mixture ions into the sample powder. For this study, an industrial diamond powder sample of 100 carats weight, along with its average fracture strength value was received from Engis Corporation, Illinois. The sample was divided into parts, each weighing 10-12 carats. At the University of Nevada, Las Vegas (UNLV), a plasma test was conducted on six sample parts for a total of 16 hours on each part. The three gas types mentioned above were used during plasma tests, with the pressure in vacuum chamber between 200 mTorr and 2 Torr. The plasma test on four sample parts was in the presence of hydrogen-air mixture. The first sample had chamber pressures between 200 mTorr and 400 mTorr. The remaining three samples had chamber

  11. Graphene nanoribbons: Relevance of etching process

    SciTech Connect

    Simonet, P. Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K.

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  12. Review of the methods to form hydrogen peroxide in electrical discharge plasma with liquid water

    NASA Astrophysics Data System (ADS)

    Locke, Bruce R.; Shih, Kai-Yuan

    2011-06-01

    This paper presents a review of the literature dealing with the formation of hydrogen peroxide from plasma processes. Energy yields for hydrogen peroxide generation by plasma from water span approximately three orders of magnitude from 4 × 10-2 to 80 g kWh-1. A wide range of plasma processes from rf to pulsed, ac, and dc discharges directly in the liquid phase have similar energy yields and may thus be limited by radical quenching processes at the plasma-liquid interface. Reactor modification using discharges in bubbles and discharges over the liquid phase can provide modest improvements in energy yield over direct discharge in the liquid, but the interpretation is complicated by additional chemical reactions of gas phase components such as ozone and nitrogen oxides. The highest efficiency plasma process utilizes liquid water droplets that may enhance efficiency by sequestering hydrogen peroxide in the liquid and by suppressing decomposition reactions by radicals from the gas and at the interface. Kinetic simulations of water vapor reported in the literature suggest that plasma generation of hydrogen peroxide should approach 45% of the thermodynamics limit, and this fact coupled with experimental studies demonstrating improvements with the presence of the condensed liquid phase suggest that further improvements in energy yield may be possible. Plasma generation of hydrogen peroxide directly from water compares favorably with a number of other methods including electron beam, ultrasound, electrochemical and photochemical methods, and other chemical processes.

  13. Spectroscopic ellipsometry on Si/SiO{sub 2}/graphene tri-layer system exposed to downstream hydrogen plasma: Effects of hydrogenation and chemical sputtering

    SciTech Connect

    Eren, Baran; Fu, Wangyang; Marot, Laurent Calame, Michel; Steiner, Roland; Meyer, Ernst

    2015-01-05

    In this work, the optical response of graphene to hydrogen plasma treatment is investigated with spectroscopic ellipsometry measurements. Although the electronic transport properties and Raman spectrum of graphene change after plasma hydrogenation, ellipsometric parameters of the Si/SiO2/graphene tri-layer system do not change. This is attributed to plasma hydrogenated graphene still being electrically conductive, since the light absorption of conducting 2D materials does not depend on the electronic band structure. A change in the light transmission can only be observed when higher energy hydrogen ions (30 eV) are employed, which chemically sputter the graphene layer. An optical contrast is still apparent after sputtering due to the remaining traces of graphene and hydrocarbons on the surface. In brief, plasma treatment does not change the light transmission of graphene; and when it does, this is actually due to plasma damage rather than plasma hydrogenation.

  14. Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen-Plasma-Induced Chemical Transport

    NASA Astrophysics Data System (ADS)

    Ohmi, Hiromasa; Yamada, Takahiro; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2011-08-01

    A purified Si film is prepared directly from metallurgical-grade (MG) Si by chemical transport using sub-atmospheric pressure H2 plasma. The purification mechanism is based on the selective etching of Si using atomic H. It is demonstrated that the concentrations of most metal impurities (e.g., Fe, Cr, Ni, Ti, and Mn) in the prepared Si film are in the acceptable range for solar-grade Si material, or below the determination limit of the several impurity measuring methods employed in this study. From the infrared absorption measurements of the etching product produced by the reaction between H2 plasma and MG-Si, it is found that the main etching product is SiH4. Therefore, a remote-type chemical transport process is developed to produce SiH4 gas directly from MG-Si. Using other purifying principles (such as a pyrolysis filter in combination with this process), it is demonstrated that purified Si films about B, P and metal atoms can be produced from metallurgical-grade Si (<98% purity).

  15. Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

    SciTech Connect

    Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng

    2010-07-15

    This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

  16. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N–H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  17. Replacement of hydrogen peroxide cleaning with oxygen plasma

    NASA Astrophysics Data System (ADS)

    Adams, B. E.

    1992-03-01

    Comparison between the standard peroxide cleaning method and an oxygen plasma modified version was run on thin film bond monitors. The plasma modified version substituted oxygen plasma for the peroxide cleaning step in the process and reduced the DI rinse water temperature from 75 C to 25 C. A direct surface cleanliness comparison was made between the two cleaning methods using Auger spectroscopy. A beam lead and ribbon bonding experiment was also run on plasma-cleaned networks. Results of both experiments indicate that plasma cleaning is superior to peroxide cleaning and that reliable bonding can be done on plasma-cleaned thin film networks.

  18. Development of cesium-free negative hydrogen ion source by using sheet plasma

    NASA Astrophysics Data System (ADS)

    Hase, Takuya; Iijima, Takaaki; Tanaka, Yuta; Takimoto, Tosikio; Tonegawa, Akira; Sato, Kohnosuke; Kawamura, Kazutaka

    2015-09-01

    We demonstrated the production of hydrogen negative ions in cesium-free discharge by using the magnetized sheet plasma. Plasma crossed with a vertical gas flow system and extracting H- beams from the sheet plasma. Under a secondary hydrogen gas entering the hydrogen plasma, the peak position of the hydrogen plasma is localized in the periphery of the sheet plasma. The maximum negative ion beam is successfully extracted using grids located in the periphery of the sheet plasma. The extraction current density is about 8 mA/cm2 at extraction voltage is 2 kV and discharge current of 30 A. The extraction negative ion current density is saturated at the extraction voltage is 2 kV for the limit of the negative ion density in the periphery region of the sheet plasma. On the other hand, the extraction current is saturated (3 mA/cm2) with increasing extraction voltage and the negative ions are not detected without the secondary gas flow (0 sccm). This curve depends on the electrons present. Therefore, it is considered that the negative ion current against the extraction current is around 60% from the ratio of the extraction current and the extraction electron current.

  19. Etching method for photoresists or polymers

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

    1991-01-01

    A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

  20. Detector and energy analyzer for energetic-hydrogen in beams and plasmas

    DOEpatents

    Bastasz, R.J.; Hughes, R.C.; Wampler, W.R.

    1988-11-01

    A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicon-dioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies. 4 figs.

  1. Detector and energy analyzer for energetic-hydrogen in beams and plasmas

    DOEpatents

    Bastasz, Robert J.; Hughes, Robert C.; Wampler, William R.

    1988-01-01

    A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.

  2. Energy density dependence of hydrogen combustion efficiency in atmospheric pressure microwave plasma

    SciTech Connect

    Yoshida, T.; Ezumi, N.; Sawada, K.; Tanaka, Y.; Tanaka, M.; Nishimura, K.

    2015-03-15

    The recovery of tritium in nuclear fusion plants is a key issue for safety. So far, the oxidation procedure using an atmospheric pressure plasma is expected to be part of the recovery method. In this study, in order to clarify the mechanism of hydrogen oxidation by plasma chemistry, we have investigated the dependence of hydrogen combustion efficiency on gas flow rate and input power in the atmospheric pressure microwave plasma. It has been found that the combustion efficiency depends on energy density of absorbed microwave power. Hence, the energy density is considered as a key parameter for combustion processes. Also neutral gas temperatures inside and outside the plasma were measured by an optical emission spectroscopy method and thermocouple. The result shows that the neutral gas temperature in the plasma is much higher than the outside temperature of plasma. The high neutral gas temperature may affect the combustion reaction. (authors)

  3. Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J.; Shul, R.J.

    1998-12-17

    The effects of the additive noble gases He, Ar and Xe on chlorine-based Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs were studied as a function of source power, chuck power and discharge composition. The etch rates of all materials with C12/He and C12/Xe are greater than with C12/Ar. Etch rates in excess of 4.8 pndmin for InP and InSb with C12/He or C12/Xe, 0.9 pndmin for InGaP with C12/Xe, and 3.8 prdmin for InGaAs with Clz/Xe were obtained at 750 W ICP power, 250 W rf power, - 1570 C12 and 5 mTorr. All three plasma chemistries produced smooth morphologies for the etched InGaP surfaces, while the etched surface of InP showed rough morphology under all conditions.

  4. Hydrogen Storage in Diamond Powder Utilizing Plasma NaF Surface Treatment for Fuel Cell Applications

    SciTech Connect

    Leal, David A.; Leal-Quiros, E.; Velez, Angel; Prelas, Mark A.; Gosh, Tushar

    2006-12-04

    Hydrogen Fuel Cells offer the vital solution to the world's socio-political dependence on oil. Due to existing difficulty in safe and efficient hydrogen storage for fuel cells, storing the hydrogen in hydrocarbon compounds such as artificial diamond is a realistic solution. By treating the surface of the diamond powder with a Sodium Fluoride plasma exposure, the surface of the diamond is cleaned of unwanted molecules. Due to fluorine's electro negativity, the diamond powder is activated and ready for hydrogen absorption. These diamond powder pellets are then placed on a graphite platform that is heated by conduction in a high voltage circuit made of tungsten wire. Then, the injection of hydrogen gas into chamber allows the storage of the Hydrogen on the surface of the diamond powder. By neutron bombardment in the nuclear reactor, or Prompt Gamma Neutron Activation Analysis, the samples are examined for parts per million amounts of hydrogen in the sample. Sodium Fluoride surface treatment allows for higher mass percentage of stored hydrogen in a reliable, resistant structure, such as diamond for fuel cells and permanently alters the diamonds terminal bonds for re-use in the effective storage of hydrogen. The highest stored amount utilizing the NaF plasma surface treatment was 22229 parts per million of hydrogen in the diamond powder which amounts to 2.2229% mass increase.

  5. Role of C{sub 2}F{sub 4}, CF{sub 2}, and ions in C{sub 4}F{sub 8}/Ar plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor

    SciTech Connect

    Barela, Marcos J.; Anderson, Harold M.; Oehrlein, Gottlieb S.

    2005-05-01

    Utilizing infrared diode-laser absorption spectroscopy (IRDLAS) and UV-Visible absorption spectroscopy (UV-Vis), we show that it is possible to make a near complete mass balance of etch reactants and products in a GEC inductively coupled fluorocarbon discharge while actively etching SiO{sub 2} substrates. Langmuir probe measurements were performed to measure the total ion current density. C{sub 2}F{sub 4} and CF{sub 2} are shown to be the main dissociation products in a C{sub 4}F{sub 8} plasma discharge. The C{sub 2}F{sub 4} concentration decreases as the SiO{sub 2} etching rate increases, along with CF{sub 2} and CF radicals, suggesting a role in the SiO{sub 2} etching process. The addition of Ar to the C{sub 4}F{sub 8} discharge increased the ion flux at the wafer surface, and the consumption rate of C{sub 2}F{sub 4} relative to CF{sub 2}. The increased ion flux enhanced the SiO{sub 2} etching rate, until at a very high degree of Ar dilution of C{sub 4}F{sub 8}/Ar the etching rate became neutral limited. We also monitored SiF{sub 2} using UV-Vis absorption and CO by IRDLAS. In our work we found SiF{sub 2} and CO to be the prevalent Si and C gas phase etch products for the SiO{sub 2} etching process.

  6. Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

    SciTech Connect

    Berube, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

    2009-09-15

    The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited Ca{sub x}Ba{sub (1-x)}Nb{sub 2}O{sub 6} (CBN) and SrTiO{sub 3} thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl{sub 2} plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl{sub 2} and BaCl{sub 2} compounds being the rate-limiting step.

  7. Synthesis of superlow friction carbon films from highly hydrogenated methane plasmas.

    SciTech Connect

    Erdemir, A.; Eryilmaz, O. L.; Nilufer, I. B.; Fenske, G. R.

    2000-10-13

    In this study, we investigated the friction and wear performance of diamondlike carbon films (DLC) derived from increasingly hydrogenated methane plasmas. The films were deposited on steel substrates by a plasma-enhanced chemical vapor deposition process at room temperature and the tribological tests were performed in dry nitrogen. Tests results revealed a close correlation between the hydrogen in source gas plasma and the friction and wear coefficients of the DLC films. Specifically, films grown in plasmas with higher hydrogen-to-carbon ratios had much lower friction coefficients and wear rates than did films derived from source gases with lower hydrogen-to-carbon ratios. The lowest friction coefficient (0.003) was achieved with a film derived from 25% methane--75% hydrogen, while a coefficient of 0.015 was found for films derived from pure methane. Similar correlations were observed for wear rates. Films derived from hydrogen-rich plasmas had the least wear, while films derived from pure methane suffered the highest wear. We used a combination of surface analytical methods to characterize the structure and chemistry of the DLC films and worn surfaces.

  8. Hydrogen and oxygen trapping and retention in stainless steel and graphite materials irradiated in plasma

    NASA Astrophysics Data System (ADS)

    Begrambekov, L.; Ayrapetov, A.; Ermakov, V.; Kaplevsky, A.; Sadovsky, Ya.; Shigin, P.

    2013-11-01

    The paper presents the results of experimental investigation of energy and flux dependences of hydrogen isotopes and oxygen trapping in carbon materials (carbon fiber composite and pyrolitic graphite), and metals (stainless steel and nickel) under irradiation in the deuterium gas discharge plasma with and without oxygen addition. The dependence of hydrogen trapping on ion energy, ion current density, oxygen addition in deuterium plasma are presented and analyzed. The sorbed molecules, containing hydrogen atoms from the residual gas and deuterium atoms of the working gas are shown to be the important source of hydrogen trapping in both carbon based materials and stainless steel. Irradiation of the SS vacuum vessel with the neutrals or/and ions of (D2 + O2) plasma initiate the hydrogen diffusion from the vessel wall and H2, HD, D2O, HDO, H2O molecule formation on the wall surface. Trapping of the low energy plasma particles and the particles from the sorbed molecules as well as modification of working gas composition are considered as the processes provided at the expense of the potential energy of plasma particles with respect to the surface and occurred through their inelastic collisions with the surface. The hydrogen trapping occurred due to “potential” processes was named as “potential”, and in contrast the trapping of fast particles due to their kinetic energy was labeled as “kinetic”.

  9. The contribution of dissociative processes to the production of atomic lines in hydrogen plasmas

    NASA Technical Reports Server (NTRS)

    Kunc, J. A.

    1985-01-01

    The contribution of molecular dissociative processes to the production of atomic lines is considered for a steady-state hydrogen plasma. If the contribution of dissociative processes is dominant, a substantial simplification in plasma diagnostics can be achieved. Numerical calculations have been performed for the production of Balmer alpha, beta, and gamma lines in hydrogen plasmas with medium and large degrees of ionization (x greater than about 0.0001) and for electron temperatures of 5000-45,000 K and electron densities of 10 to the 10th to 10 to the 16th/cu cm.

  10. Interaction of impurity ions with a weakly non-Maxwellian simple hydrogenic plasma. [None

    SciTech Connect

    Terry, W.K.

    1988-03-01

    The average acceleration of an ensemble of /open quotes/test particles/close quotes/ in a plasma is called the /open quotes/dynamical friction/close quotes/; the average rate at which their velocity vectors spread out in velocity-space diffusion-rate tensor. These quantities are derived for impurity ions intereacting with a weakly non-Maxwellian simple hydrogenic plasma. The distribution functions for the plasma ions and electrons are written explicitly.

  11. Hydrogen recycling study by Balmer lines emissions in linear plasma machine TPE

    NASA Astrophysics Data System (ADS)

    Shimada, K.; Tanabe, T.; Causey, R.; Venhaus, T.; Okuno, K.

    2001-03-01

    We have investigated the influence of target materials and temperatures on Balmer series emission in a linear plasma apparatus, Tritium Plasma Experiment (TPE). The intensities of the Balmer series emission in front of the target were higher for heavier mass target and also for lower target temperature, showing rather linear relationship between the emission intensity and hydrogen reflection coefficient. For exothermic hydrogen occluders of Ti and Ta, the intensity ratio of Dβ/ Dα increased with the target temperature markedly, whereas the intensity ratio stayed rather constant for endothermic hydrogen occluders of Ni, Cu and W. This is a clear demonstration that the target materials and temperatures modify the boundary plasma. In addition the intensity ratio Dβ/Dα is not simply a function of plasma temperature but has clear target temperature dependence.

  12. Experimental studies of the interactions between a hydrogen plasma and a carbon or tungsten wall

    NASA Astrophysics Data System (ADS)

    Ouaras, K.; Colina Delacqua, L.; Quirós, C.; Lombardi, G.; Redolfi, M.; Vrel, D.; Hassouni, K.; Bonnin, X.

    2015-03-01

    We present work done at LSPM (Laboratory of Sciences of Processes and Material Sciences), using the CASIMIR ECR plasma reactor device, aimed at answering questions about hydrogen isotope fuel retention and dust production in the context of the plasma-facing components (PFCs) of the International Thermonuclear Experimental Reactor (ITER). The plasma is characterized by means of optical spectroscopy, mass spectrometry and electrostatic probe; furthermore the dust density and size distribution will be measured by a laser diagnostic system. We present some early results obtained from hydrogen plasma exposure of pure tungsten samples, as well as samples of ITER-relevant tungsten-rich powders, produced inhouse by the ball-milling technique, which are likely to be a by-product of material erosion and migration during tokamak operation. In particular, we have performed measurements of the specific surface area of these powders as a proxy to their capacity to absorb hydrogen.

  13. Thermodynamic assessment and experimental verification of reactive ion etching of magnetic metal elements

    SciTech Connect

    Kim, Taeseung; Chen, Jack Kun-Chieh; Chang, Jane P.

    2014-07-01

    A thermodynamic analysis of etch chemistries for Co, Fe, and Ni using a combination of hydrogen, oxygen, and halogen gases suggested that a single etchant does not work at 300 K; however, a sequential exposure to multiple etchants results in sufficiently high partial pressure of the reaction products for the process to be considered viable. This sequential dose utilized the two reactions, a surface halogenation followed by the secondary etchant exposure. (MX{sub 2} (c) + 3Y →MY(g) + 2XY(g), where M = Co, Fe, Ni; X = F, Cl, Br; Y = O, H) The volatilization reaction induced by sequential plasma exposure changed the equilibrium point, increasing the partial pressure of the etch product. Amongst all combinations, Cl{sub 2} or Br{sub 2} plasmas followed by H{sub 2} plasma were the most effective. From both the gas phase diagnostics and surface composition analysis, H{sub 2} plasma alone could not etch metallic Co, Fe, and Ni films but alternating doses of Cl{sub 2} and H{sub 2} plasmas resulted in more effective removal of chlorinated metals and increased the overall etch rate.

  14. Method for dry etching of transition metals

    DOEpatents

    Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

    1998-01-01

    A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

  15. Method for dry etching of transition metals

    DOEpatents

    Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

    1998-09-29

    A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

  16. Effect of Ar and N{sub 2} addition on CH{sub 4}-H{sub 2} based chemistry inductively coupled plasma etching of HgCdTe

    SciTech Connect

    Boulard, F.; Baylet, J.; Cardinaud, C.

    2009-07-15

    Mercury cadmium telluride (MCT) CH{sub 4}-H{sub 2} based chemistry inductively coupled plasma (ICP) etching mechanisms are investigated. The effect of Ar and N{sub 2} addition in the mixture on plasma and MCT surface characteristics are studied by Langmuir probe, mass spectrometry, and x-ray photoelectron spectroscopy (XPS). In the authors' conditions, the HgTe faster removal than CdTe leads to the formation of a CdTe rich layer in the first 30 s of plasma exposure. Ion flux intensity and composition are only slightly influenced by N{sub 2} addition while a strong effect is shown on neutral species by the formation of NH{sub 3}, HCN, and the increase in CH{sub 3} radical density. At the opposite, Ar addition to the gas mixture leads to a total ion flux increase and promote CH{sub 3}{sup +} formation while small changes are observed on neutral species. In our low pressure and high density conditions, same order of magnitude of ion and neutral CH{sub 3} flux on MCT surface is found, suggesting a chemical contribution of CH{sub 3}{sup +} ions in MCT etching. This is confirmed by a strong correlation of the MCT etching yield versus total (neutral and ionic) CH{sub 3} flux. These results suggest that the etching is limited by the supply of CH{sub 3} to the surface.

  17. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    SciTech Connect

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.

  18. Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors.

    PubMed

    Ma, Yingjie; Zhang, Yonggang; Gu, Yi; Chen, Xingyou; Shi, Yanhui; Ji, Wanyan; Xi, Suping; Du, Ben; Li, Xiaoliang; Tang, Hengjing; Li, Yongfu; Fang, Jiaxiong

    2016-04-01

    Effects of mesa etching and geometry on InGaAs/InAlAs avalanche photodiodes (APDs) were investigated by using both wet and inductively coupled plasma (ICP) etching with different mesa shapes as well as etchants. It was found that the mesa geometry had no evident impact on APDs' characteristics regardless of the etching techniques applied. Besides, ICP-etched APDs showed faster punch-through, suppressed premature surface breakdown and lower dark current behaviors compared to the wet-etched devices. Substantially suppressed surface leakage was also observed for ICP-etched devices, showing 1 and 3 orders of magnitude better at room temperature and 77 K respectively, and over 1 order of magnitude higher surface resistivity up to 4×107 Ω cm, in comparison to the wet-etched APDs. Introduction of extra hydrogen and Ar plasma in ICP etching led to detrimental effects to APDs' performance by enhancing the tunneling or recombination at surfaces. Those experimental results were clearly interpreted based on the surface state theories. PMID:27137065

  19. [Study on the Emission Spectrum of Hydrogen Production with Microwave Discharge Plasma in Ethanol Solution].

    PubMed

    Sun, Bing; Wang, Bo; Zhu, Xiao-mei; Yan, Zhi-yu; Liu, Yong-jun; Liu, Hui

    2016-03-01

    Hydrogen is regarded as a kind of clean energy with high caloricity and non-pollution, which has been studied by many experts and scholars home and abroad. Microwave discharge plasma shows light future in the area of hydrogen production from ethanol solution, providing a new way to produce hydrogen. In order to further improve the technology and analyze the mechanism of hydrogen production with microwave discharge in liquid, emission spectrum of hydrogen production by microwave discharge plasma in ethanol solution was being studied. In this paper, plasma was generated on the top of electrode by 2.45 GHz microwave, and the spectral characteristics of hydrogen production from ethanol by microwave discharge in liquid were being studied using emission spectrometer. The results showed that a large number of H, O, OH, CH, C2 and other active particles could be produced in the process of hydrogen production from ethanol by microwave discharge in liquid. The emission spectrum intensity of OH, H, O radicals generated from ethanol is far more than that generated from pure water. Bond of O-H split by more high-energy particles from water molecule was more difficult than that from ethanol molecule, so in the process of hydrogen production by microwave discharge plasma in ethanol solution; the main source of hydrogen was the dehydrogenation and restructuring of ethanol molecules instead of water decomposition. Under the definite external pressure and temperature, the emission spectrum intensity of OH, H, O radicals increased with the increase of microwave power markedly, but the emission spectrum intensity of CH, C2 active particles had the tendency to decrease with the increase of microwave power. It indicated that the number of high energy electrons and active particles high energy electron energy increased as the increase of microwave power, so more CH, C2 active particles were split more thoroughly. PMID:27400531

  20. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity.

    PubMed

    Zeniou, A; Ellinas, K; Olziersky, A; Gogolides, E

    2014-01-24

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min(-1) using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing. PMID:24346308

  1. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

    NASA Astrophysics Data System (ADS)

    Zeniou, A.; Ellinas, K.; Olziersky, A.; Gogolides, E.

    2014-01-01

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min-1 using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  2. Structure and hydrogen bonding in plasma deposited polymorphous silicon thin films

    NASA Astrophysics Data System (ADS)

    Lebib, S.; Cabarrocas, P. Roca I.

    2004-04-01

    We present a detailed study of the structure and hydrogen bonding in silicon thin films ranging from amorphous to microcrystalline. We emphasize the results for hydrogenated polymorphous silicon films obtained under plasma conditions close to powder formation where silicon clusters and nanocrystals contribute to growth. Fourier Transform Infra-Red (FTIR) spectroscopy, Raman spectroscopy, X-Ray-Diffraction (XRD), and hydrogen evolution measurements are performed to characterize the hydrogen bonding and the structure of the films in their as-deposited state and after isochronal annealing at increasing temperature in the range of 300 to 600 °C. While Raman spectroscopy and XRD give an average information on the structure of the films, without clear evidence of the presence of crystallites in the polymorphous films, infrared spectroscopy and hydrogen evolution measurements which probe the local hydrogen related structure are shown to be perfectly adapted to characterize polymorphous silicon films. In particular, IR spectroscopy measurements, reveal the presence of a stretching band at 2030 cm^{-1}, associated with a peak at 873 cm^{-1} in the bending region and a downward shift in the Si-H wagging mode from 640 cm^{-1} to 622 cm^{-1}. We attribute the 2030 cm^{-1} mode to the presence of hydrogen bonded at the surface of the plasma produced silicon clusters and nanocrystals. This assignment is supported by hydrogen evolution measurements in which a sharp low-temperature hydrogen evolution peak appears at around 420 °C followed by up to five peaks at higher temperatures. This particular hydrogen bonding in polymorphous silicon films is also supported by isochronal annealing studies which show that the bands at 2030 cm^{-1} and 873 cm^{-1} vanish at annealing temperatures corresponding to the low temperature hydrogen evolution peak. Based on these results and their correlation with the hydrogen-related material structure, we propose a picture for the structure of

  3. Reduction and dephosphorization of molten iron oxide with hydrogen-argon plasma

    SciTech Connect

    Nakamura, Y.; Ishikawa, H.; Ito, M.

    1981-06-01

    A laboratory-scale test was made in which iron oxide contained in a water-cooled crucible was melted and reduced by using a 10-50% H/sub 2/-Ar transferred arc plasma. The degree of reduction was found to be proportional to the amount of hydrogen fed. The efficiency of hydrogen utilization for the reduction was 50-70%, which is much higher than equilibrium values below 3000 K. This high efficiency was attributable partially to the reactivity of the hydrogen atom in a plasma and partially to the continuous contact of the hydrogen plasma with the molten iron oxide layer floating over the liquid iron formed. During the plasma reduction, evaporative loss of phosphorus was observed. The degree of phosphorus removal depended on the weight ratio, CaO/(SiO/sub 2/+Al/sub 2/O/sub 3/). H/sub 2/-Ar plasma was shown to be far superior for the phosphorus removal, compared with Ar and Ar-N/sub 2/ plasma.

  4. Simulation of DBD plasma actuators, and nanoparticle-plasma interactions in argon-hydrogen CCP RF discharges

    NASA Astrophysics Data System (ADS)

    Mamunuru, Meenakshi

    The focus of this work is modeling and simulation of low temperature plasma discharges (LTPs). The first part of the thesis consists of the study of dielectric barrier (DBD) plasma actuators. Use of DBD plasma actuators on airfoil surfaces is a promising method for increasing airfoil efficiency. Actuators produce a surface discharge that causes time averaged thrust in the neutral gas. The thrust modifies the boundary layer properties of the flow and prevents the occurrence of separation bubbles. In simulating the working of an actuator, the focus is on the spatial characteristics of the thrust produced by the discharge over very short time and space scales. The results provide an understanding of the causes of thrust, and the basic principles behind the actuator operation. The second part of this work focusses on low pressure plasma discharges used for silicon nanoparticle synthesis. When reactive semiconductor precursor gases are passed through capacitively coupled plasma (CCP) radio frequency (RF) reactors, nano sized particles are formed. When the reactors are operated at high enough powers, a very high fraction of the nanoparticles are crystallized in the chamber. Nanoparticle crystallization in plasma is a very complex process and not yet fully understood. It can be inferred from experiments that bulk and surface processes initiated due to energetic ion impaction of the nanoparticles are responsible for reordering of silicon atoms, causing crystallization. Therefore, study of plasma-particle interactions is the first step towards understanding how particles are crystallized. The specific focus of this work is to investigate the experimental evidence that hydrogen gas presence in argon discharges used for silicon nanocrystal synthesis, leads to a superior quality of nanocrystals. Influence of hydrogen gas on plasma composition and discharge characteristics is studied. Via Monte Carlo simulation, distribution of ion energy impacting particles surface is studied

  5. Multiple diagnostics in a high-pressure hydrogen microwave plasma torch

    SciTech Connect

    Torres, J.; Mullen, J. J. A. M. van der; Gamero, A.; Sola, A.

    2010-02-01

    We present an experimental study of a hydrogen plasma produced by a microwave axial injection torch, launching the plasma in a helium-filled chamber. Three different diagnostic methods have been used to obtain the electron density and temperature as follows: The Stark intersection method of Balmer spectral lines (already tested in argon and helium plasmas); the modified Boltzmann-plot showing that the plasma is far from the local thermodynamic equilibrium but ruled by the excitation-saturation balance; and a study by the disturbed bilateral relations theory. All of these diagnostic techniques show a good agreement.

  6. Hydrogen manufacturing using plasma reformers. [Annual progress report], May 1, 1995--December 31, 1995

    SciTech Connect

    Cohn, D.R.; Bromberg, L.; Hochgreb, S.; O`Brien, C.; Rabinovich, A.

    1995-12-31

    Manufacturing of hydrogen from hydrocarbon fuels is needed for a variety of applications. These applications include fuel cells used in stationary electric power production and in vehicular propulsion. Hydrogen can also be used for various combustion engine systems. There is a wide range of requirements on the capacity of the hydrogen manufacturing system, the purity of the hydrogen fuel, and capability for rapid response. The overall objectives of a hydrogen manufacturing facility are to operate with high availability at the lowest possible cost and to have minimal adverse environmental impact. Plasma technology has potential to significantly alleviate shortcomings of conventional means of manufacturing hydrogen. These shortcomings include cost and deterioration of catalysts; limitations on hydrogen production from heavy hydrocarbons; limitations on rapid response; and size and weight requirements. In addition, use of plasma technology could provide for a greater variety of operating modes in particular the possibility of virtual elimination Of C0{sub 2} production by pyrolytic operation. This mode of hydrogen production may be of increasing importance due to recent additional evidence of global warming.

  7. Wafer-level fabrication of a high-silica v-groove for fiber-optic packaging using deep dry-etching with a dual-frequency high-density plasma

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Won; Heo, Gi-Seok; Choi, Bum-Ho; Kim, Young-Baek; Oh, Jin-Kyoung; Lee, Hyung-Jong

    2015-10-01

    We developed a procedure for fabricating deep silica v-grooves of about 70 μm for fiber-optic applications by using a deep dry-etching with a dual-frequency high-density plasma source. This procedure has the advantages of sub-micron precision with wafer-level productivity and a high etching speed of 0.7 μm/sec. An electro-plated hard mask as thick as 8 μm that can endure the deep dry-etch was also developed. In particular, the angular inclination of the etched groove was controllable by using the flow of C4F8 gas. A fiber array block was assembled by using a v-groove chip. The location error of the fiber cores in the block was measured to be less than 0.3 μm. This confirms that the dry-etched silica v-grooves can be applied to the packaging of optical devices with wafer-level productivity and high precision.

  8. Laser-induced plasma spectroscopy of hydrogen Balmer series in laboratory air.

    PubMed

    Swafford, Lauren D; Parigger, Christian G

    2014-01-01

    Stark-broadened emission profiles for the hydrogen alpha and beta Balmer series lines in plasma are measured to characterize electron density and temperature. Plasma is generated using a typical laser-induced breakdown spectroscopy (LIBS) arrangement that employs a focused Q-switched neodymium-doped yttrium aluminum garnet (Nd : YAG) laser, operating at the fundamental wavelength of 1064 nm. The temporal evolution of the hydrogen Balmer series lines is explored using LIBS. Spectra from the plasma are measured following laser-induced optical breakdown in laboratory air. The electron density is primarily inferred from the Stark-broadened experimental data collected at various time delays. Due to the presence of nitrogen and oxygen in air, the hydrogen alpha and beta lines become clearly discernible from background radiation for time delays of 0.4 and 1.4 μs, respectively. PMID:25226255

  9. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  10. Optimization of the output and efficiency of a high power cascaded arc hydrogen plasma source

    SciTech Connect

    Vijvers, W. A. J.; Gils, C. A. J. van; Goedheer, W. J.; Meiden, H. J. van der; Veremiyenko, V. P.; Westerhout, J.; Lopes Cardozo, N. J.; Rooij, G. J. van; Schram, D. C.

    2008-09-15

    The operation of a cascaded arc hydrogen plasma source was experimentally investigated to provide an empirical basis for the scaling of this source to higher plasma fluxes and efficiencies. The flux and efficiency were determined as a function of the input power, discharge channel diameter, and hydrogen gas flow rate. Measurements of the pressure in the arc channel show that the flow is well described by Poiseuille flow and that the effective heavy particle temperature is approximately 0.8 eV. Interpretation of the measured I-V data in terms of a one-parameter model shows that the plasma production is proportional to the input power, to the square root of the hydrogen flow rate, and is independent of the channel diameter. The observed scaling shows that the dominant power loss mechanism inside the arc channel is one that scales with the effective volume of the plasma in the discharge channel. Measurements on the plasma output with Thomson scattering confirm the linear dependence of the plasma production on the input power. Extrapolation of these results shows that (without a magnetic field) an improvement in the plasma production by a factor of 10 over where it was in van Rooij et al. [Appl. Phys. Lett. 90, 121501 (2007)] should be possible.

  11. Plasma And Beam Homogeneity Of The RF-Driven Negative Hydrogen Ion Source For ITER NBI

    SciTech Connect

    Fantz, U.; Franzen, P.; Kraus, W.; Wuenderlich, D.; Gutser, R.; Berger, M.

    2009-03-12

    The neutral beam injection (NBI) system of ITER is based on a large RF driven negative hydrogen ion source. For good beam transmission ITER requires a beam homogeneity of better than 10%. The plasma uniformity and the correlation with the beam homogeneity are being investigated at the prototype ion sources at IPP. Detailed studies are carried out at the long pulse test facility MANITU with a source of roughly 1/8 of the ITER source size. The plasma homogeneity close to plasma grid is measured by optical emission spectroscopy and by fixed Langmuir probes working in the ion saturation region. The beam homogeneity is measured with a spatially resolved H{sub {alpha}} Doppler-shifted beam spectroscopy system. The plasma top-to-bottom symmetry improves with increasing RF power and increasing bias voltage which is applied to suppress the co-extracted electron current. The symmetry is better in deuterium than in hydrogen. The boundary layer near the plasma grid determines the plasma symmetry. At high ion currents with a low amount of co-extracted electrons the plasma is symmetrical and the beam homogeneity is typically 5-10%(RMS). The size scaling and the influence of the magnetic field strength of the filter field created by a plasma grid current is studied at the test facility RADI (roughly a 1/2 size ITER source) at ITER relevant RF power levels. In volume operation in deuterium (non-cesiated source), the plasma illumination of the grid is satisfying.

  12. Impact of combined hydrogen plasma and transient heat loads on the performance of tungsten as plasma facing material

    NASA Astrophysics Data System (ADS)

    Wirtz, M.; Bardin, S.; Huber, A.; Kreter, A.; Linke, J.; Morgan, T. W.; Pintsuk, G.; Reinhart, M.; Sergienko, G.; Steudel, I.; De Temmerman, G.; Unterberg, B.

    2015-11-01

    Experiments were performed in three different facilities in order to investigate the impact of combined steady state deuterium plasma exposure and ELM-like thermal shock events on the performance of ultra high purity tungsten. The electron beam facility JUDITH 1 was used to simulate pure thermal loads. In addition the linear plasma devices PSI-2 and Pilot-PSI have been used for successive as well as simultaneous exposure where the transient heat loads were applied by a high energy laser and the pulsed plasma operation, respectively. The results show that the damage behaviour strongly depends on the loading conditions and the sequence of the particle and heat flux exposure. This is due to hydrogen embrittlement and/or a higher defect concentration in the tungsten near surface region due to supersaturation of hydrogen. The different results in terms of damage formation from both linear plasma devices indicate that also the plasma parameters such as particle energy, flux and fluence, plasma impurities and the pulse shape have a strong influence on the damage performance. In addition, the different loading methods such as the scanning with the electron beam in contrast to the homogeneous exposure by the laser leads to an faster increase of the surface roughness due to plastic deformation.

  13. Reduction of a thin chromium oxide film on Inconel surface upon treatment with hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Vesel, Alenka; Mozetic, Miran; Balat-Pichelin, Marianne

    2016-11-01

    Inconel samples with a surface oxide film composed of solely chromium oxide with a thickness of approximately 700 nm were exposed to low-pressure hydrogen plasma at elevated temperatures to determine the suitable parameters for reduction of the oxide film. The hydrogen pressure during treatment was set to 60 Pa. Plasma was created by a surfaguide microwave discharge in a quartz glass tube to allow for a high dissociation fraction of hydrogen molecules. Auger electron depth profiling (AES) was used to determine the decay of the oxygen in the surface film and X-ray diffraction (XRD) to measure structural modifications. During hydrogen plasma treatment, the oxidized Inconel samples were heated to elevated temperatures. The reduction of the oxide film started at temperatures of approximately 1300 K (considering the emissivity of 0.85) and the oxide was reduced in about 10 s of treatment as revealed by AES. The XRD showed sharper substrate peaks after the reduction. Samples treated in hydrogen atmosphere under the same conditions have not been reduced up to approximately 1500 K indicating usefulness of plasma treatment.

  14. Calculation of optical properties for hot plasmas using a screened hydrogenic model

    NASA Astrophysics Data System (ADS)

    Rubiano, J. G.; Rodríguez, R.; Florido, R.; Mendoza, M. A.; Gil, J. M.; Martel, P.; Mínguez, E.

    2006-06-01

    In work a hydrogenic versions of the code ATOM3R-OP is presented. This flexible code has been developed to obtain optical properties for plasmas in a wide range of densities and temperatures named and the Hydrogenic versions is intended to couple with hydrodynamic codes. The code is structured in three modules devoted to the calculation of the atomic magnitudes, the ionic abundances and the optical properties, respectively, which are briefly described. Finally, bound-bound opacities and emissivities of Carbon plasma computed with this model are compared with more sophisticated self-consistent codes.

  15. Improvement of Electron Field Emission in Patterned Carbon Nanotubes by High Temperature Hydrogen Plasma Treatment

    PubMed Central

    Wang, Sigen; Sellin, Paul. J.; Lian, Jun; Özsan, Ersin; Chang, Sha

    2009-01-01

    In this paper, we report a significant improvement of electron field emission property in patterned carbon nanotubes films by using a high temperature (650 °C) hydrogen plasma treatment. This treatment was found to greatly increase the emission current, emission uniformity and stability. The mechanism study showed that these enhanced properties are attributed to the lowering of the potential barrier and the creation of geometrical features through the removal of amorphous carbon, catalyst particles and the saturation of dangling bonds after such a hydrogen plasma treatment. PMID:19946566

  16. Research progress on ionic plasmas generated in an intense hydrogen negative ion source

    SciTech Connect

    Takeiri, Y. Tsumori, K.; Nagaoka, K.; Kaneko, O.; Ikeda, K.; Nakano, H.; Kisaki, M.; Tokuzawa, T.; Osakabe, M.; Kondo, T.; Sato, M.; Shibuya, M.; Komada, S.; Sekiguchi, H.; Geng, S.

    2015-04-08

    Characteristics of ionic plasmas, observed in a high-density hydrogen negative ion source, are investigated with a multi-diagnostics system. The ionic plasma, which consists of hydrogen positive- and negative-ions with a significantly low-density of electrons, is generated in the ion extraction region, from which the negative ions are extracted through the plasma grid. The negative ion density, i.e., the ionic plasma density, as high as the order of 1×10{sup 17}m{sup −3}, is measured with cavity ring-down spectroscopy, while the electron density is lower than 1×10{sup 16}m{sup −3}, which is confirmed with millimeter-wave interferometer. Reduction of the negative ion density is observed at the negative ion extraction, and at that time the electron flow into the ionic plasma region is observed to conserve the charge neutrality. Distribution of the plasma potential is measured in the extraction region in the direction normal to the plasma grid surface with a Langmuir probe, and the results suggest that the sheath is formed at the plasma boundary to the plasma grid to which the bias voltage is applied. The beam extraction should drive the negative ion transport in the ionic plasma across the sheath formed on the extraction surface. Larger reduction of the negative ions at the beam extraction is observed in a region above the extraction aperture on the plasma grid, which is confirmed with 2D image measurement of the Hα emission and cavity ring-down spectroscopy. The electron distribution is also measured near the plasma grid surface. These various properties observed in the ionic plasma are discussed.

  17. Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

    NASA Astrophysics Data System (ADS)

    Yokoyama, Meiso; Li, Jiin; Su, Shui; Su, Yan

    1994-12-01

    Indium-tin oxide (ITO) films coated on glass have been etched by reactive ion etching (RIE) with a gas mixture of Ar and Cl2. The etching rates of ITO films depend strongly on power density, gas pressure, the composition of reactive gases, and the total flow rate of etchants. According to the results from the study, we can postulate that the ITO films' etching follows the ion-assisted chemical etching. A high etching rate above 100 Å/min can be achieved, and an etching mechanism will be proposed. The selectivity of ITO films to glass reaches 35 with a 30 line/mm pattern. After exposure of ITO films to an Ar/Cl2 mixed gas plasma discharge, their sheet resistance does not markedly change. The residue of Cl atoms exists only in the region near the surface. By means of parameter control, we can obtain good pattern images of ITO films measured by scanning electron microscopy (SEM).

  18. Effects of laser radiation field on energies of hydrogen atom in plasmas

    NASA Astrophysics Data System (ADS)

    Bahar, M. K.

    2015-09-01

    In this study, for the first time, the Schrödinger equation with more general exponential cosine screened Coulomb (MGECSC) potential is solved numerically in the presence of laser radiation field within the Ehlotzky approximation using the asymptotic iteration method. The MGECSC potential includes four different potential forms in consideration of different sets of the parameters in the potential. By applying laser field, the total interaction potential of hydrogen atom embedded in plasmas converts to double well-type potential. The plasma screening effects under the influence of laser field as well as confinement effects of laser field on hydrogen atom in Debye and quantum plasmas are investigated by solving the Schrödinger equation with the laser-dressed MGECSC potential. It is resulted that since applying a monochromatic laser field on hydrogen atom embedded in a Debye and quantum plasma causes to shift in the profile of the total interaction potential, the confinement effects of laser field on hydrogen atom in plasmas modeled by the MGECSC potential change localizations of energy states.

  19. Effects of laser radiation field on energies of hydrogen atom in plasmas

    SciTech Connect

    Bahar, M. K.

    2015-09-15

    In this study, for the first time, the Schrödinger equation with more general exponential cosine screened Coulomb (MGECSC) potential is solved numerically in the presence of laser radiation field within the Ehlotzky approximation using the asymptotic iteration method. The MGECSC potential includes four different potential forms in consideration of different sets of the parameters in the potential. By applying laser field, the total interaction potential of hydrogen atom embedded in plasmas converts to double well-type potential. The plasma screening effects under the influence of laser field as well as confinement effects of laser field on hydrogen atom in Debye and quantum plasmas are investigated by solving the Schrödinger equation with the laser-dressed MGECSC potential. It is resulted that since applying a monochromatic laser field on hydrogen atom embedded in a Debye and quantum plasma causes to shift in the profile of the total interaction potential, the confinement effects of laser field on hydrogen atom in plasmas modeled by the MGECSC potential change localizations of energy states.

  20. Surface modification of optical materials with hydrogen plasma for fabrication of Bragg gratings.

    PubMed

    Salgaeva, Uliana O; Volyncev, Anatoliy B; Mendes, Sergio B

    2016-01-20

    We investigate the hydrogen plasma process as a route for creating Bragg gratings (BGs) on optoelectronic materials such as undoped lithium niobate (LiNbO(3)), proton-exchanged LiNbO(3), and soda-lime glass. Photopatterns (periodic modulations, Λ=323-2000  nm) were created on those substrates and the hydrogen plasma process was investigated for its ability to transfer the microstructures and the underlying mechanisms involved in this process. The diffraction efficiency and surface topology of the BG were characterized, as well as the optical properties of corresponding bulk materials undergoing the same plasma treatment. It is shown that the hydrogen plasma treatment changes the complex refractive index and modifies the surface topology with a volume expansion in the near-surface region, and both features are connected to the appearance of structural defects in the materials. The hydrogen plasma offers unique flexibility and advantages that can be explored for the fabrication of integrated photonic components. PMID:26835921