Pressure-stabilized binary compounds of magnesium and silicon

NASA Astrophysics Data System (ADS)

Huan, Tran Doan

2018-02-01

The family of binary compounds composed of magnesium and silicon is rather rich. In addition to the well-known magnesium silicide Mg2Si , other compounds, including MgSi2, Mg4Si7 , Mg5Si6 , MgSi, and Mg9Si5 , have also been identified and/or proposed in precipitated Al-Mg-Si solid solutions. Nevertheless, computational studies show that only Mg2Si is thermodynamically stable at ambient conditions while certain nonzero hydrostatic pressure can stabilize Mg9Si5 so that it can coexist with Mg2Si . We conduct a comprehensive search for viable binary compounds of MgxSi1 -x (1 /3 ≤x ≤2 /3 ) , discovering numerous low-energy structures for all the compounds. On one hand, we find that MgSi2, MgSi, and Mg9Si5 are likely pressure-stabilized materials, while, on the other hand, supporting previous studies, we raise doubt on the existence of Mg5Si6 , and claim that the existence of Mg4Si7 remains an open question. Therefore, we recommend that (hydrostatic and/or nonhydrostatic) pressure should be explicitly considered when discussing the stability of these solids (and maybe other solids as well) by computations. We also find that MgSi2 can potentially exhibit superconducting behaviors within a wide range of pressure with the critical temperature of up to 7 K.

Metal organic chemical vapor deposition of 111-v compounds on silicon

DOEpatents

Vernon, Stanley M.

1986-01-01

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

A stable silicon(0) compound with a Si=Si double bond.

PubMed

Wang, Yuzhong; Xie, Yaoming; Wei, Pingrong; King, R Bruce; Schaefer, Henry F; von R Schleyer, Paul; Robinson, Gregory H

2008-08-22

Dative, or nonoxidative, ligand coordination is common in transition metal complexes; however, this bonding motif is rare in compounds of main group elements in the formal oxidation state of zero. Here, we report that the potassium graphite reduction of the neutral hypervalent silicon-carbene complex L:SiCl4 {where L: is:C[N(2,6-Pri2-C6H3)CH]2 and Pri is isopropyl} produces L:(Cl)Si-Si(Cl):L, a carbene-stabilized bis-silylene, and L:Si=Si:L, a carbene-stabilized diatomic silicon molecule with the Si atoms in the formal oxidation state of zero. The Si-Si bond distance of 2.2294 +/- 0.0011 (standard deviation) angstroms in L:Si=Si:L is consistent with a Si=Si double bond. Complementary computational studies confirm the nature of the bonding in L:(Cl)Si-Si(Cl):L and L:Si=Si:L.

Organosilicon compounds. XVIII - Silicon-containing dianhydrides

NASA Technical Reports Server (NTRS)

Pratt, J. R.; Thames, S. F.

1973-01-01

Description of four new silicon-containing dianhydrides synthetized in an attempt to provide useful silicon-containing polyimide precursors. They were prepared by aqueous potassium permanganate-pyridine oxidations of corresponding tetramethyl intermediates to form tetracarboxylic acids, which were dehydrated to the dianhydrides.

Attachment chemistry of aromatic compounds on a Silicon(100) surface

NASA Astrophysics Data System (ADS)

Henriksson, Anders; Nishiori, Daiki; Maeda, Hiroaki; Miyachi, Mariko; Yamanoi, Yoshinori; Nishihara, Hiroshi

2018-03-01

A mild method was developed for the chemical attachment of aromatic compounds directly onto a hydrogen-terminated Si(100) (H-Si(100)) surface. In the presence of palladium catalyst and base, 4-iodophenylferrocene and a π-conjugated iron complex were attached to H-Si(100) electrodes and hydrogen-terminated silicon nanowires (H-SiNWs), both of which have predominant dihydride species on their surfaces. The reactions were conducted in 1,4-dioxane at 100 °C and the immobilization of both 4-ferrocenylphenyl group and π-conjugated molecular wires were confirmed and quantified by XPS and electrochemical measurements. We reported densely packed monolayer whose surface coverage (Γ), estimated from the electrochemical measurements are in analogue to similar monolayers prepared via thermal or light induced hydrosilylation reactions with alkenes or alkynes. The increase in electrochemical response observed on nanostructured silicon surfaces corresponds well to the increase in surface area, those strongly indicating that this method may be applied for the functionalization of electrodes with a variety of surface topographies.

Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements

NASA Astrophysics Data System (ADS)

Savenkov, G. G.; Kardo-Sysoev, A. F.; Zegrya, A. G.; Os'kin, I. A.; Bragin, V. A.; Zegrya, G. G.

2017-10-01

The first findings concerning the initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds via the electrical explosion of a semiconductor bridge are presented. The obtained results indicate that the energy parameters of an explosive conversion depend on the mass of a combustible agent—namely, nanoporous silicon—and the silicon-doping type.

Method of making silicon carbide-silicon composite having improved oxidation resistance

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2002-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Volatile organic silicon compounds in biogases: development of sampling and analytical methods for total silicon quantification by ICP-OES.

PubMed

Chottier, Claire; Chatain, Vincent; Julien, Jennifer; Dumont, Nathalie; Lebouil, David; Germain, Patrick

2014-01-01

Current waste management policies favor biogases (digester gases (DGs) and landfill gases (LFGs)) valorization as it becomes a way for energy politics. However, volatile organic silicon compounds (VOSiCs) contained into DGs/LFGs severely damage combustion engines and endanger the conversion into electricity by power plants, resulting in a high purification level requirement. Assessing treatment efficiency is still difficult. No consensus has been reached to provide a standardized sampling and quantification of VOSiCs into gases because of their diversity, their physicochemical properties, and the omnipresence of silicon in analytical chains. Usually, samplings are done by adsorption or absorption and quantification made by gas chromatography-mass spectrometry (GC-MS) or inductively coupled plasma-optical emission spectrometry (ICP-OES). In this objective, this paper presents and discusses the optimization of a patented method consisting in VOSiCs sampling by absorption of 100% ethanol and quantification of total Si by ICP-OES.

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

PubMed

Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2015-07-08

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

Silicon carbide-silicon composite having improved oxidation resistance and method of making

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

1999-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Volatile Organic Silicon Compounds in Biogases: Development of Sampling and Analytical Methods for Total Silicon Quantification by ICP-OES

PubMed Central

Julien, Jennifer; Dumont, Nathalie; Lebouil, David; Germain, Patrick

2014-01-01

Current waste management policies favor biogases (digester gases (DGs) and landfill gases (LFGs)) valorization as it becomes a way for energy politics. However, volatile organic silicon compounds (VOSiCs) contained into DGs/LFGs severely damage combustion engines and endanger the conversion into electricity by power plants, resulting in a high purification level requirement. Assessing treatment efficiency is still difficult. No consensus has been reached to provide a standardized sampling and quantification of VOSiCs into gases because of their diversity, their physicochemical properties, and the omnipresence of silicon in analytical chains. Usually, samplings are done by adsorption or absorption and quantification made by gas chromatography-mass spectrometry (GC-MS) or inductively coupled plasma-optical emission spectrometry (ICP-OES). In this objective, this paper presents and discusses the optimization of a patented method consisting in VOSiCs sampling by absorption of 100% ethanol and quantification of total Si by ICP-OES. PMID:25379538

A study of the dynamic flammability of radiation cross-linked flame-retardant HDPE/EPDM/silicon-elastomer compound

NASA Astrophysics Data System (ADS)

Jia, Shaojin; Zhang, Zhicheng; Du, Zhiwen; Teng, Renrui; Wang, Zhengzhou

2003-04-01

A dynamic flammability study of flame-retardant compound consisting of HDPE, EPDM and silicon elastomer blended with additives, as wire and cable insulation was made before and after irradiation. The data of RHR, EHC, SEC and the concentration of CO and CO 2 from cone colorimeter shown in the burning process were accessed. By blending silicon elastomer, CO release rate was reduced and the thermal endurance was improved. Oxygen index, mechanical property, morphology of the char formed in dynamical flame and thermal stability were also investigated.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, Ken

1994-01-01

An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, K.

1994-12-27

An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, K.

1992-01-01

This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, R.; Baik, S.

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, Rishi; Baik, Sunggi

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

Novel drift structures for silicon and compound semiconductor X-ray and gamma-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, B.E.; Iwanczyk, J.S.

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X-rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that the authors discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector. The main features of the silicon drift structures for X rays and light detection aremore » very small anode capacitance independent of the overall detector size, low noise, and high throughput. To take advantage of the small detector capacitance, the first stage of the electronics needs to be integrated into the detector anode. In the gamma-ray application, factors other than electronic noise dominate, and there is no need to integrate the electronics into the anode. Thus, a different drift structure is needed in conjunction with a high-Z material. The main features in this case are large active detector volume and electron-only induced signal.« less

Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

NASA Technical Reports Server (NTRS)

Tanaka, Hidehiko

1987-01-01

A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum

NASA Technical Reports Server (NTRS)

Kuramoto, N.; Takiguchi, H.

1984-01-01

The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed. The reaction temperature to produce the powder containing 40% of 2H-type silicon carbide is set at above 1550 degrees C in an atmosphere of aluminum or aluminum compounds and nitrogen gas or an antioxidation atmosphere containing nitrogen gas. The mixture ratio of silicon dioxide and carbon powder is 0.55 - 1:2.0 and the contents of aluminum or aluminum compounds within silicon dioxide is less than 3% in weight.

Use of free silicon in liquid phase sintering of silicon nitrides and sialons

DOEpatents

Raj, R.; Baik, S.

1985-11-12

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

Use of free silicon in liquid phase sintering of silicon nitrides and sialons

DOEpatents

Raj, Rishi; Baik, Sunggi

1985-11-12

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

Organic silicon compounds anf hydrogen sulfide removal from biogas by mineral and adsorbent

NASA Astrophysics Data System (ADS)

Choi, J.

2015-12-01

Biogas utilized for energy production needs to be free from organic silicon compounds and hydrogen sulfide , as their burning has damaging effects on utilities and humans; organic silicon compounds and hydrogen sulfide can be found in biogas produced from biomass wastes, due to their massive industrial use in synthetic product,such as cosmetics, detergents and paints.Siloxanes and hydrogen sulfide removal from biogas can be carried out by various methods (Ajhar et al., 2010); aim of the present work is to find a single practical andeconomic way to drastically and simultaneously reduce both hydrogen sulfide and the siloxanes concentration to less than 1 ppm. Some commercial activated carbons previously selected (Monteleoneet al., 2011) as being effective in hydrogen sulfide up taking have been tested in an adsorption measurement apparatus, by flowing both hydrogen sulphide and volatile siloxane (Decamethycyclopentasiloxane or D5) in a nitrogen stream,typically 25-300 ppm D5 over N2, through an clay minerals, Fe oxides and Silica; the adsorption process was analyzed by varying some experimental parameters (concentration, grain size, bed height). The best silica shows an adsorption capacity of 0.2 g D5 per gram of silica. The next thermo gravimetric analysis (TGA) confirms the capacity data obtained experimentally by the breakthrough curve tests.The capacity results depend on D5 and hydrogen sulphide concentrations. A regenerative silica process is then carried out byheating the silica bed up to 200 ° C and flushing out the adsorbed D5 and hydrogen sulphide samples in a nitrogen stream in athree step heating procedure up to 200 ° C. The adsorption capacity is observed to degrade after cyclingthe samples through several adsorption-desorption cycles.

A study of the role of fillers in silicone rubber compounds for outdoor insulation

NASA Astrophysics Data System (ADS)

Meyer, Luiz Henrique

Polymeric materials are being used as a housing material on high voltage outdoor insulation as an alternative to porcelain or glass in line insulators, surge arresters, station posts, and bushings. Among the polymeric materials in use, silicone rubber has proven to have good aging performance under polluted conditions by keeping low levels of leakage current by virtue of its hydrophobicity. However, the exposure of polymeric materials to contaminated and humid environments can lead to certain surface conditions that reduces hydrophobicity increasing leakage current levels, giving rise to dry band arcing. Dry band arcing produces heat, which can result in tracking or erosion of the housing material. Although this dry band arcing does not harm porcelain or glass housings, it will erode pure silicone rubber to such an extent that its application in outdoor environments is not, practical. Fillers are added to silicone rubber to improve tracking and erosion resistance. Among the filler choices, alumina trihydrate (ATH) and silica have been extensively adopted in the compounding of polymeric housings. ATH is a flame retardant that has a molecular water in its formulation. Whenever the surface temperature of an ATH filled polymer reaches approximately 220°C, the water of hydration is released from the ATH molecule, what is recognized as an efficient way to cool down the surface, for example, in the case of dry band arcing. Alternatively, silica has very good bonding with the polymer backbone, imparting mechanical strength to the composite matrix. In addition, fillers such as ATH or silica increase the thermal conductivity of silicone rubber composites, which facilitates moving the heat away from its source, that is, from the origin of dry band arcing. Although heat is considered to be the main degradation factor when dry band arcing occurs, very little information is available on the thermal performance of filled silicone rubber. The standard methods available to test

Self-Assembly in Systems Containing Silicone Compounds

NASA Astrophysics Data System (ADS)

Ferreira, Maira Silva; Loh, Watson

2009-01-01

Chemical systems formed by silicone solvents and surfactants have potential applications in a variety of industrial products. In spite of their technological relevance, there are few reports on the scientific literature that focus on characterizing such ternary systems. In this work, we have aimed to develop a general, structural investigation on the phase diagram of one system that typically comprises silicone-based chemicals, by means of the SAXS (small-angle X-ray scattering) technique. Important features such as the presence of diverse aggregation states in the overall system, either on their own or in equilibrium with other structures, have been detected. As a result, optically isotropic chemical systems (direct and/or reversed microemulsions) and liquid crystals with lamellar or hexagonal packing have been identified and characterized.

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

PubMed Central

Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

2013-01-01

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. PMID:24326774

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

NASA Technical Reports Server (NTRS)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Influence of silicon defects on the adsorption of thiophene-like compounds on polycyclic aromatic hydrocarbons: a theoretical study using thiophene + coronene as the simplest model.

PubMed

Galano, Annia

2007-03-08

Physisorption and chemisorption processes of thiophene on coronene and 2Si-coronene have been studied using density functional theory and MP2 methods. These systems have been chosen as the simplest models to describe the adsorption of thiophene-like compounds on polycyclic aromatic hydrocarbons (PAHs). The calculated data suggest that the presence of silicon atoms in PAHs could favor their interaction with thiophene and similar compounds. Small stabilization energies have been found for several physisorbed complexes. The thiophene chemisorption on coronene seems very unlikely to occur, while that on 2Si-coronene leads to addition products which are very stable, with respect to the isolated reactants. These chemisorption processes were found to be exoergic (DeltaG < 0) in the gas phase and in the nonpolar liquid phase. The results reported in this work suggest that silicon defects on extended polycyclic aromatic hydrocarbons, such as graphite, soot, and large-diameter carbon nanotubes, could make them useful in the removal processes of aromatic sulfur compounds from oil hydrocarbons.

Method of and apparatus for removing silicon from a high temperature sodium coolant

DOEpatents

Yunker, Wayne H.; Christiansen, David W.

1987-05-05

A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

Method of and apparatus for removing silicon from a high temperature sodium coolant

DOEpatents

Yunker, Wayne H.; Christiansen, David W.

1987-01-01

A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

Method of and apparatus for removing silicon from a high temperature sodium coolant

DOEpatents

Yunker, W.H.; Christiansen, D.W.

1983-11-25

This patent discloses a method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

Determination of low solvent concentration by nano-porous silicon photonic sensors using volatile organic compound method.

PubMed

Bui, Huy; Pham, Van Hoi; Pham, Van Dai; Hoang, Thi Hong Cam; Pham, Thanh Binh; Do, Thuy Chi; Ngo, Quang Minh; Nguyen, Thuy Van

2018-05-07

A vast majority of the organic solvents used in industry and laboratories are volatile, hazardous and toxic organic compounds, they are considered as a potent problem for human health and a cause of environmental pollution. Although analytical laboratory methods can determine extremely low solvent concentration, the sensing method with low cost and high sensitivity remains a conundrum. This paper presents and compares three methods (volatile organic compound (VOC), liquid drop and saturated vapour pressure) for determination of organic solvents in liquid environment by using photonic sensor based on nano-porous silicon (pSi) microcavity structures. Among those, the VOC method provides the highest sensitivity at low solvent volume concentrations because it can create a high vapour pressure of the analyte on the sensor surface owing to the capillary deposition of organic solvent into the silicon pores. This VOC method consists of three steps: heating the solution with its particular boiling temperature, controlling the flowing gas through liquid and cooling sensor. It delivers the highest sensitivity of 6.9 nm/% at concentration of 5% and the limit of detection (LOD) of pSi-sensor is 0.014% in case of ethanol in water when using an optical system with a resolution of 0.1 nm. Especially, the VOC method is capable of detecting low volume concentration of methanol in two tested ethanol solutions of 30% (v/v) and 45% (v/v) with the LOD of pSi-sensor up to 0.01% and 0.04%, respectively. This result will help pave a way to control the quality of contaminated liquor beverages.

Neutron absorbing room temperature vulcanizable silicone rubber compositions

DOEpatents

Zoch, Harold L.

1979-11-27

A neutron absorbing composition comprising a one-component room temperature vulcanizable silicone rubber composition or a two-component room temperature vulcanizable silicone rubber composition in which the composition contains from 25 to 300 parts by weight based on the base silanol or vinyl containing diorganopolysiloxane polymer of a boron compound or boron powder as the neutron absorbing ingredient. An especially useful boron compound in this application is boron carbide.

The Electrochemical Fluorination of Organosilicon Compounds

NASA Technical Reports Server (NTRS)

Seaver, Robert E.

1961-01-01

The electrochemical fluorination of tetramethylsilane, hexamethyl-disiloxane, diethyldichlorosilane, amyltrichlorosilane, and phenyltri-chlorosilane was conducted in an Inconel cell equipped with nickel electrodes. A potential of approximately 5.0 volts and a current of approximately 1.0 ampere were used for the electrolysis reaction. In all cases the fluorinations resulted in considerable scission of the carbon-silicon bonds yielding hydrogen and the various fluorinated decomposition products; no fluoroorganosilicon compounds were identified. The main decomposition products were silicon tetrafluoride, the corresponding fluorinated carbon compounds, and the various organofluorosilanes. It is suggested that this is due to the nucleophilic attack of the fluoride ion (or complex fluoride ion) on the carbon-silicon bond.

Laser-induced phase separation of silicon carbide

PubMed Central

Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

2016-01-01

Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. PMID:27901015

Silicone Wristbands as Personal Passive Samplers

PubMed Central

2014-01-01

Active-sampling approaches are commonly used for personal monitoring, but are limited by energy usage and data that may not represent an individual’s exposure or bioavailable concentrations. Current passive techniques often involve extensive preparation, or are developed for only a small number of targeted compounds. In this work, we present a novel application for measuring bioavailable exposure with silicone wristbands as personal passive samplers. Laboratory methodology affecting precleaning, infusion, and extraction were developed from commercially available silicone, and chromatographic background interference was reduced after solvent cleanup with good extraction efficiency (>96%). After finalizing laboratory methods, 49 compounds were sequestered during an ambient deployment which encompassed a diverse set of compounds including polycyclic aromatic hydrocarbons (PAHs), consumer products, personal care products, pesticides, phthalates, and other industrial compounds ranging in log Kow from −0.07 (caffeine) to 9.49 (tris(2-ethylhexyl) phosphate). In two hot asphalt occupational settings, silicone personal samplers sequestered 25 PAHs during 8- and 40-h exposures, as well as 2 oxygenated-PAHs (benzofluorenone and fluorenone) suggesting temporal sensitivity over a single work day or week (p < 0.05, power =0.85). Additionally, the amount of PAH sequestered differed between worksites (p < 0.05, power = 0.99), suggesting spatial sensitivity using this novel application. PMID:24548134

Silicone wristbands as personal passive samplers.

PubMed

O'Connell, Steven G; Kincl, Laurel D; Anderson, Kim A

2014-03-18

Active-sampling approaches are commonly used for personal monitoring, but are limited by energy usage and data that may not represent an individual's exposure or bioavailable concentrations. Current passive techniques often involve extensive preparation, or are developed for only a small number of targeted compounds. In this work, we present a novel application for measuring bioavailable exposure with silicone wristbands as personal passive samplers. Laboratory methodology affecting precleaning, infusion, and extraction were developed from commercially available silicone, and chromatographic background interference was reduced after solvent cleanup with good extraction efficiency (>96%). After finalizing laboratory methods, 49 compounds were sequestered during an ambient deployment which encompassed a diverse set of compounds including polycyclic aromatic hydrocarbons (PAHs), consumer products, personal care products, pesticides, phthalates, and other industrial compounds ranging in log K(ow) from -0.07 (caffeine) to 9.49 (tris(2-ethylhexyl) phosphate). In two hot asphalt occupational settings, silicone personal samplers sequestered 25 PAHs during 8- and 40-h exposures, as well as 2 oxygenated-PAHs (benzofluorenone and fluorenone) suggesting temporal sensitivity over a single work day or week (p < 0.05, power =0.85). Additionally, the amount of PAH sequestered differed between worksites (p < 0.05, power = 0.99), suggesting spatial sensitivity using this novel application.

Theory-Guided Innovation of Noncarbon Two-Dimensional Nanomaterials

DTIC Science & Technology

2016-05-24

unique structures and exceptional properties, such as Be5C2 monolayers with quasi -planaer pentacoordinate carbon, FeB6 monolayers hypercoordinate...properties, such as Be5C2 monolayers with quasi -planaer pentacoordinate carbon, FeB6 monolayers hypercoordinate transition metal, semiconducting Group 15...theoretical and experimental studies, we have developed a convenient chemical approach to etch hexagonal boron nitride monolayers to achieve holes

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

NASA Astrophysics Data System (ADS)

Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

2016-12-01

A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

NASA Technical Reports Server (NTRS)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

Photoluminescent silicon nanocrystals with chlorosilane surfaces - synthesis and reactivity

NASA Astrophysics Data System (ADS)

Höhlein, Ignaz M. D.; Kehrle, Julian; Purkait, Tapas K.; Veinot, Jonathan G. C.; Rieger, Bernhard

2014-12-01

We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place.We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place. Electronic supplementary information (ESI) available: Detailed experimental procedures and additional NMR, PL, EDX, DLS and TEM data. See DOI: 10.1039/C4NR05888G

Generation of low work function, stable compound thin films by laser ablation

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2001-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Process for removal of water and silicon mu-oxides from chlorosilanes

DOEpatents

Tom, Glenn M.; McManus, James V.

1992-03-10

A scavenger composition having utility for removal of water and silicon mu-oxide impurities from chlorosilanes, such scavenger composition comprising: (a) a support; and (b) associated with the support, one or more compound(s) selected from the group consisting of compounds of the formula: R.sub.a-x MCl.sub.x wherein: M is a metal selected from the group consisting of the monovalent metals lithium, sodium, and potassium; the divalent metals magnesium, strontium, barium, and calcium; and the trivalent metal aluminum; R is alkyl; a is a number equal to the valency of metal M; and x is a number having a value of from 0 to a, inclusive; and wherein said compound(s) of the formula R.sub.a-x MCl.sub.x have been activated for impurity-removal service by a reaction scheme selected from those of the group consisting of: (i) reaction of such compound(s) with hydrogen chloride to form a first reaction product therefrom, followed by reaction of the first reaction product with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y, wherein y is a number having a value of from 1 to 3, inclusive; and (ii) reaction of such compound(s) with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y wherein y is a number having a value of 1 to 3, inclusive. A corresponding method of making the scavenger composition, and of purifying a chlorosilane which contains oxygen and silicon mu-oxide impurities, likewise are disclosed, together with a purifier apparatus, in which a bed of the scavenger composition is disposed. The composition, purification process, and purifier apparatus of the invention have utility in purifying gaseous chlorosilanes which are employed in the semiconductor industry as silicon source reagents for forming epitaxial silicon layers.

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor

Silicone Resin Applications for Ceramic Precursors and Composites

PubMed Central

Narisawa, Masaki

2010-01-01

This article reviews the applications of silicone resins as ceramic precursors. The historical background of silicone synthesis chemistry is introduced to explain the production costs and supply availability of various silicones. Thermal degradation processes of silicones are classified in terms of the main chain structure and cyclic oligomer expulsion process, which determine the resulting ceramic yield and the chemical composition. The high temperature decomposition of Si-O-C beyond 1,400 °C in an inert atmosphere and formation of a protective silica layer on material surfaces beyond 1,200 °C in an oxidative atmosphere are discussed from the viewpoints of the wide chemical composition of the Si-O-C materials. Applications of the resins for binding agents, as starting materials for porous ceramics, matrix sources with impregnation, fiber spinning and ceramic adhesions are introduced. The recent development of the process of filler or cross-linking agent additions to resin compounds is also introduced. Such resin compounds are useful for obtaining thick coatings, MEMS parts and bulk ceramics, which are difficult to obtain by pyrolysis of simple organometallic precursors without additives.

Covalent Surface Modification of Silicon Oxides with Alcohols in Polar Aprotic Solvents.

PubMed

Lee, Austin W H; Gates, Byron D

2017-09-05

Alcohol-based monolayers were successfully formed on the surfaces of silicon oxides through reactions performed in polar aprotic solvents. Monolayers prepared from alcohol-based reagents have been previously introduced as an alternative approach to covalently modify the surfaces of silicon oxides. These reagents are readily available, widely distributed, and are minimally susceptible to side reactions with ambient moisture. A limitation of using alcohol-based compounds is that previous reactions required relatively high temperatures in neat solutions, which can degrade some alcohol compounds or could lead to other unwanted side reactions during the formation of the monolayers. To overcome these challenges, we investigate the condensation reaction of alcohols on silicon oxides carried out in polar aprotic solvents. In particular, propylene carbonate has been identified as a polar aprotic solvent that is relatively nontoxic, readily accessible, and can facilitate the formation of alcohol-based monolayers. We have successfully demonstrated this approach for tuning the surface chemistry of silicon oxide surfaces with a variety of alcohol containing compounds. The strategy introduced in this research can be utilized to create silicon oxide surfaces with hydrophobic, oleophobic, or charged functionalities.

Highly crosslinked silicon polymers for gas chromatography columns

NASA Technical Reports Server (NTRS)

Shen, Thomas C. (Inventor)

1994-01-01

A new highly crosslinked silicone polymer particle for gas chromatography application and a process for synthesizing such copolymer are described. The new copolymer comprises vinyltriethoxysilane and octadecyltrichlorosilane. The copolymer has a high degree of crosslinking and a cool balance of polar to nonpolar sites in the porous silicon polymer assuring fast separation of compounds of variable polarity.

Electronic structures and thermochemical properties of the small silicon-doped boron clusters B(n)Si (n=1-7) and their anions.

PubMed

Tai, Truong Ba; Kadłubański, Paweł; Roszak, Szczepan; Majumdar, Devashis; Leszczynski, Jerzy; Nguyen, Minh Tho

2011-11-18

We perform a systematic investigation on small silicon-doped boron clusters B(n)Si (n=1-7) in both neutral and anionic states using density functional (DFT) and coupled-cluster (CCSD(T)) theories. The global minima of these B(n)Si(0/-) clusters are characterized together with their growth mechanisms. The planar structures are dominant for small B(n)Si clusters with n≤5. The B(6)Si molecule represents a geometrical transition with a quasi-planar geometry, and the first 3D global minimum is found for the B(7)Si cluster. The small neutral B(n)Si clusters can be formed by substituting the single boron atom of B(n+1) by silicon. The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B(7)Si cluster is constructed by doping Si-atoms on the symmetry axis of the B(n) host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B(n)Si(0/-) clusters, such as binding energies (BE), heats of formation at 0 K (ΔH(f)(0)) and 298 K (ΔH(f)([298])), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D(e)), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches. The differences of heats of formation (at 0 K) between the G4 and CBS approaches for the B(n)Si clusters vary in the range of 0.0-4.6 kcal mol(-1). The largest difference between two approaches for ADE values is 0.15 eV. Our theoretical predictions also indicate that the species B(2)Si, B(4)Si, B(3)Si(-) and B(7)Si(-) are systems with enhanced stability, exhibiting each a double (σ and π) aromaticity. B(5)Si(-) and B(6)Si are doubly antiaromatic (σ and π) with lower stability. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Double stabilization of nanocrystalline silicon: a bonus from solvent

NASA Astrophysics Data System (ADS)

Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A.

2016-01-01

Double stabilization of the silicon nanocrystals was observed for the first time by 29Si and 13C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C-O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

In-situ formation of nanoparticles within a silicon-based matrix

DOEpatents

Thoma, Steven G [Albuquerque, NM; Wilcoxon, Jess P [Albuquerque, NM; Abrams, Billie L [Albuquerque, NM

2008-06-10

A method for encapsulating nanoparticles with an encapsulating matrix that minimizes aggregation and maintains favorable properties of the nanoparticles. The matrix comprises silicon-based network-forming compounds such as ormosils and polysiloxanes. The nanoparticles are synthesized from precursors directly within the silicon-based matrix.

Incorporation of dopant impurities into a silicon oxynitride matrix containing silicon nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehrhardt, Fabien; Muller, Dominique; Slaoui, Abdelilah, E-mail: abdelilah.slaoui@unistra.fr

2016-05-07

Dopant impurities, such as gallium (Ga), indium (In), and phosphorus (P), were incorporated into silicon-rich silicon oxynitride (SRSON) thin films by the ion implantation technique. To form silicon nanoparticles, the implanted layers were thermally annealed at temperatures up to 1100 °C for 60 min. This thermal treatment generates a phase separation of the silicon nanoparticles from the SRSON matrix in the presence of the dopant atoms. We report on the position of the dopant species within the host matrix and relative to the silicon nanoparticles, as well as on the effect of the dopants on the crystalline structure and the size ofmore » the Si nanoparticles. The energy-filtered transmission electron microscopy technique is thoroughly used to identify the chemical species. The distribution of the dopant elements within the SRSON compound is determined using Rutherford backscattering spectroscopy. Energy dispersive X-ray mapping coupled with spectral imaging of silicon plasmons was performed to spatially localize at the nanoscale the dopant impurities and the silicon nanoparticles in the SRSON films. Three different behaviors were observed according to the implanted dopant type (Ga, In, or P). The In-doped SRSON layers clearly showed separated nanoparticles based on indium, InOx, or silicon. In contrast, in the P-doped SRSON layers, Si and P are completely miscible. A high concentration of P atoms was found within the Si nanoparticles. Lastly, in Ga-doped SRSON the Ga atoms formed large nanoparticles close to the SRSON surface, while the Si nanoparticles were localized in the bulk of the SRSON layer. In this work, we shed light on the mechanisms responsible for these three different behaviors.« less

Toxic Compounds in Our Food: Arsenic Uptake By Rice and Potential Mitigation By Silicon

NASA Astrophysics Data System (ADS)

Seyfferth, A.; Gill, R.; Penido, E.

2014-12-01

Arsenic is a ubiquitous element in soils worldwide and has the potential to negatively impact human and ecosystem health under certain biogeochemical conditions. While arsenic is relatively immobile in most oxidized soils due to a high affinity for soil solids, arsenic becomes mobilized under reduced soil conditions due to the reductive dissolution of iron(III) oxides thereby releasing soil-bound arsenic. Since arsenic is a well-known carcinogen, this plant-soil process has the potential to negatively impact the lives of billions of rice consumers worldwide upon plant uptake and grain storage of released arsenic. Moreover, arsenic uptake by rice is excacerbated by the use of As-laden groundwater for rice irrigation. One proposed strategy to decrease arsenic uptake by rice plants is via an increase in dissolved silicon in paddy soil solution (pore-water), since silicic acid and arsenous acid share an uptake pathway. However, several soil processes that influence arsenic cycling may be affected by silicon including desorption from bulk soil, formation and mineralogy of iron(III) oxide plaque, and adsorption/desorption onto/from iron plaque; the effect of silicon on these soil processes will ultimately dictate the effectiveness of altered dissolved silicon in decreasing arsenic uptake at the root, which in turn dictates the concentration of arsenic found in grains. Furthermore, the source of silicon may impact carbon cycling and, in particular, methane emissions. Here, impacts of altered dissolved silicon on processes that affect rhizospheric biogeochemical cycling of arsenic and subsequent plant-uptake, and how it influences other biogeochemical cycles such as carbon and iron are investigated. We show that silicon can decrease arsenic uptake and grain storage under certain conditions, and that altered silicon affects the type of iron (III) oxide that comprises iron plaque.

Photovoltaic applications of Compound Parabolic Concentrator (CPC)

NASA Technical Reports Server (NTRS)

Winston, R.

1975-01-01

The use of a compound parabolic concentrator as field collector, in conjunction with a primary focusing concentrator for photovoltaic applications is studied. The primary focusing concentrator can be a parabolic reflector, an array of Fresnel mirrors, a Fresnel lens or some other lens. Silicon solar cell grid structures are proposed that increase efficiency with concentration up to 10 suns. A ray tracing program has been developed to determine energy distribution at the exit of a compound parabolic concentrator. Projected total cost of a CPC/solar cell system will be between 4 and 5 times lower than for flat plate silicon cell arrays.

The Failure of Absorption of DC Silicone Fluid 703 from the Gastrointestinal Tract of Rats

PubMed Central

Paul, J.; Pover, W. F. R.

1960-01-01

The intestinal absorption of silicone fluid 703, a methyl phenyl polysiloxane, has been studied in the rat. This silicone was chosen for the present investigation because of its lipid-like character and its solubility in olive oil. The experimental findings demonstrate that very little, if any, silicone is absorbed when fed in olive oil. No silicone was found in the lymph lipids of cannulated rats fed the silicone, and balance experiments by recovery of the organosilicon compound and triglyceride after feeding to rats for three hours showed that 85% of silicone fluid 703 was recovered from the gastrointestinal tract, whereas 70% of the fed triglyceride was absorbed. The unabsorbed silicone was concentrated chiefly in the intestinal lumen. Balance experiments by recovery of the organosilicon compound after long-term feeding gave recoveries of 96% of the silicone. This amount was recovered entirely from the lower part of the gastrointestinal tract and the faeces. No silicon fluid 703 was found in the liver, kidneys, or fat depots. The urine contained no soluble silica. PMID:14430986

Interior phase transformations and mass-radius relationships of silicon-carbon planets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilson, Hugh F.; Militzer, Burkhard, E-mail: hughfw@gmail.com

2014-09-20

Planets such as 55 Cancri e orbiting stars with a high carbon-to-oxygen ratio may consist primarily of silicon and carbon, with successive layers of carbon, silicon carbide, and iron. The behavior of silicon-carbon materials at the extreme pressures prevalent in planetary interiors, however, has not yet been sufficiently understood. In this work, we use simulations based on density functional theory to determine high-pressure phase transitions in the silicon-carbon system, including the prediction of new stable compounds with Si{sub 2}C and SiC{sub 2} stoichiometry at high pressures. We compute equations of state for these silicon-carbon compounds as a function of pressure,more » and hence derive interior structural models and mass-radius relationships for planets composed of silicon and carbon. Notably, we predict a substantially smaller radius for SiC planets than in previous models, and find that mass radius relationships for SiC planets are indistinguishable from those of silicate planets. We also compute a new equation of state for iron. We rederive interior models for 55 Cancri e and are able to place more stringent restrictions on its composition.« less

Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

NASA Astrophysics Data System (ADS)

Oulachgar, El Hassane

. This work has demonstrated that a polysilane polymeric source can be used to deposit a wide range of thin film materials exhibiting similar properties with conventional ceramic materials such as silicon carbide (SiC), silicon oxynitride (SiON), silicon oxycarbide (SiOC) silicon dioxide (SiO2) and silicon nitride (Si3N4). The strict control of the deposition process allows precise control of the electrical, optical and chemical properties of polymer-based thin films within a broad range. This work has also demonstrated for the first time that poly(dimethylsilmaes) polymers deposited by CVD can be used to effectively passivate both silicon and gallium arsenide MOS devices. This finding makes polymer-based thin films obtained by CVD very promising for the development of high-kappa dielectric materials for next generation high-mobility CMOS technology. Keywords. Thin films, Polymers, Vapor Phase Deposition, CVD, Nanodielectrics, Organosilanes, Polysilanes, GaAs Passivation, MOSFET, Silicon Oxynitride, Integrated Waveguide, Silicon Carbide, Compound Semiconductors.

Wet-chemical systems and methods for producing black silicon substrates

DOEpatents

Yost, Vernon; Yuan, Hao-Chih; Page, Matthew

2015-05-19

A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

The effect of silicone-gel on the immune response.

PubMed

Naim, J O; Lanzafame, R J; van Oss, C J

1995-01-01

Silicone materials have been used in medical applications for at least 30 years. Despite this long history of use the question whether silicones can mediate an immunological reaction that may be detrimental to the host remains unanswered. Most studies on the biocompatability of silicones conclude that silicones are chemically stable compounds, which however are often capable of eliciting a benign chronic inflammatory response. Recently, our laboratory has conducted a series of animal experiments aimed at determining the immunological adjuvancy potential of silicone-gel taken from commercial breast implants. Our previous studies have indicated that silicone-gel is a potent humoral (antibody) adjuvant. Our present studies have found that silicone-gel is capable of eliciting auto-antibodies to rat thyroglobulin and bovine collagen II. However this immune response did not produce any histological evidence of thyroiditis or arthritis. Theories to explain why silicone-gel behaves as an adjuvant are discussed along with discussion of the hypothesis on the desirability of replacing silicone-gel with a more hydrophilic material in bioimplants.

Novel axially disubstituted non-aggregated silicon phthalocyanines.

PubMed

Bıyıklıoğlu, Zekeriya; Cakır, Dilek

2012-12-01

This paper describes the synthesis, spectroscopic characterization of a range of new axially-disubstituted silicon phthalocyanines with 2-[2-(dimethylamino)ethoxy] or 2-[2-(1,4,7,10,13-pentaoxa-16-azacyclooctadecan-16-yl)ethoxy] groups as axial ligands. 2-[2-(Dimethylamino)ethoxy]ethanol 2, 2-[2-(1,4,7,10,13-pentaoxa-16-azacyclooctadecan-16-yl)ethoxy]ethanol 4 are reacted with silicon phthalocyanine 1, to give an axially-disubstituted silicon phthalocyanines 3 and 5. Axially-disubstituted silicon phthalocyanine complexes were synthesized at the first time. Newly synthesized silicon phthalocyanines were characterized by UV-Vis, IR, (1)H NMR, (13)C NMR spectroscopy, ESI mass spectrometry. These new silicon(IV) phthalocyanines 3 and 5 showed excellent solubility in organic solvents such as CHCl(3), CH(2)Cl(2), acetone, DMF, DMSO, THF, EtOAc. The aggregation behavior of these compounds were investigated in different concentrations of DMSO. The effect of solvents on absorption spectra were studied in various organic solvents. The thermal stabilities of the silicon(IV) phthalocyanines 3 and 5 were determined by thermogravimetric analysis. Copyright © 2012 Elsevier B.V. All rights reserved.

Composition, process, and apparatus, for removal of water and silicon mu-oxides from chlorosilanes

DOEpatents

Tom, Glenn M.; McManus, James V.

1991-10-15

A scavenger composition having utility for removal of water and silicon mu-oxide impurities from chlorosilanes, such scavenger composition comprising: (a) a support; and (b) associated with the support, one or more compound(s) selected from the group consisting of compounds of the formula: R.sub.a-x MCl.sub.x wherein: M is a metal selected from the group consisting of the monovalent metals lithium, sodium, and potassium; the divalent metals magnesium, strontium, barium, and calcium; and the trivalent metal aluminum; R is alkyl; a is a number equal to the valency of metal M; and x is a number having a value from 0 to a, inclusive; and wherein said compound(s) of the formula R.sub.a-x MCl.sub.x have been activated for impurity-removal service by a reaction scheme selected from those of the group consisting of: (i) reaction of such compound(s) with hydrogen chloride to form a first reaction product therefrom, followed by reaction of the first reaction product with a chlorosilane of the formula: SiH.sub.4"y Cl.sub.y, wherein y is a number having a value of from 1 to 3, inclusive; and (ii) reaction of such compound(s) with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y wherein y is a number having a value of 1 to 3, inclusive. A corresponding method of making the scavenger composition, and of purifying a chlorosilane which contains oxygen and silicon mu-oxide impurities, likewise are disclosed, together with a purifier apparatus, in which a bed of the scavenger composition is disposed. The composition, purification process, and purifier apparatus of the invention have utility in purifying gaseous chlorosilanes which are employed in the semiconductor industry as silicon source reagents for forming epitaxial silicon layers.

A general classification of silicon utilizing organisms

NASA Astrophysics Data System (ADS)

Das, P.; Das, S.

2010-12-01

Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges

Rapid Covalent Modification of Silicon Oxide Surfaces through Microwave-Assisted Reactions with Alcohols.

PubMed

Lee, Austin W H; Gates, Byron D

2016-07-26

We demonstrate the method of a rapid covalent modification of silicon oxide surfaces with alcohol-containing compounds with assistance by microwave reactions. Alcohol-containing compounds are prevalent reagents in the laboratory, which are also relatively easy to handle because of their stability against exposure to atmospheric moisture. The condensation of these alcohols with the surfaces of silicon oxides is often hindered by slow reaction kinetics. Microwave radiation effectively accelerates this condensation reaction by heating the substrates and/or solvents. A variety of substrates were modified in this demonstration, such as silicon oxide films of various thicknesses, glass substrates such as microscope slides (soda lime), and quartz. The monolayers prepared through this strategy demonstrated the successful formation of covalent surface modifications of silicon oxides with water contact angles of up to 110° and typical hysteresis values of 2° or less. An evaluation of the hydrolytic stability of these monolayers demonstrated their excellent stability under acidic conditions. The techniques introduced in this article were successfully applied to tune the surface chemistry of silicon oxides to achieve hydrophobic, oleophobic, and/or charged surfaces.

Density functional theory calculation of refractive indices of liquid-forming silicon oil compounds

NASA Astrophysics Data System (ADS)

Lee, Sanghun; Park, Sung Soo; Hagelberg, Frank

2012-02-01

A combination of quantum chemical calculation and molecular dynamics simulation is applied to compute refractive indices of liquid-forming silicon oils. The densities of these species are obtained from molecular dynamics simulations based on the NPT ensemble while the molecular polarizabilities are evaluated by density functional theory. This procedure is shown to yield results well compatible with available experimental data, suggesting that it represents a robust and economic route for determining the refractive indices of liquid-forming organic complexes containing silicon.

Quantitation of buried contamination by use of solvents. [degradation of silicone polymers by amine solvents

NASA Technical Reports Server (NTRS)

Pappas, S. P.; Hsiao, Y. C.; Hill, L. W.

1973-01-01

Spore recovery form cured silicone potting compounds using amine solvents to degrade the cured polymers was investigated. A complete list of solvents and a description of the effect of each on two different silicone polymers is provided.

Multi-stir bar sorptive extraction for analysis of odor compounds in aqueous samples.

PubMed

Ochiai, Nobuo; Sasamoto, Kikuo; Ieda, Teruyo; David, Frank; Sandra, Pat

2013-11-08

As reproducible coating of stir bars with more polar phases was found to be very difficult, a supporting grid was used in the development of an ethyleneglycol-modified Silicone (EG Silicone) coated stir bar. This new polar coating showed good performance for the extraction of polar solutes, but long term use also showed degradation of the coating due to friction while stirring. In order to address the lower robustness of the EG Silicone stir bar which has a much softer coating compared to a conventional polydimethylsiloxane (PDMS) stir bar, a novel SBSE procedure termed multi-SBSE ((m)SBSE) was developed. (m)SBSE consists of the robust PDMS stir bar stirring at the bottom of the vial and the EG Silicone stir bar attached on the inner side wall of the vial (a magnetic clip is used for the set-up). After extraction, the two stir bars are placed in a single glass desorption liner and are simultaneously thermally desorbed. The desorbed compounds were analyzed by thermal desorption-gas chromatography-mass spectrometry (TD-GC-MS). Compared to conventional SBSE, (m)SBSE provides more uniform enrichment of a wide range of odor compounds in aqueous sample since both stir bars can complement each other, while eliminating the damage of the EG Silicone phase during the extraction. The robustness of the EG Silicone stir bar was dramatically increased and more than 30 extraction and desorption cycles were possible without loss in performance. The recoveries for polar solutes such as 2-acetyl pyrrole (logKow: 0.55), benzyl alcohol (logKow: 1.08), guaiacol (logKow: 1.34), and indole (logKow: 2.05) were increased by a factor of about 2-7. The (m)SBSE-TD-GC-MS method showed good linearity (r(2)>0.9913) and high sensitivity (limit of detection: 0.011-0.071 ng mL(-1)) for the test compounds spiked in water. The feasibility and benefit of the method was demonstrated with analysis of odor compounds in roasted green tea. The normalized areas obtained from (m)SBSE showed the best

Liquid phase sintering of silicon carbide

DOEpatents

Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

1989-05-09

Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

Liquid phase sintering of silicon carbide

DOEpatents

Cutler, Raymond A.; Virkar, Anil V.; Hurford, Andrew C.

1989-01-01

Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

1995-01-01

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

Using silicone wristbands to evaluate preschool children’s exposure to flame retardants

PubMed Central

Kile, Molly L.; Scott, Richard P.; O’Connell, Steven G.; Lipscomb, Shannon; MacDonald, Megan; McClelland, Megan; Anderson, Kim A.

2016-01-01

Silicone wristbands can be used as passive sampling tools for measuring personal environmental exposure to organic compounds. Due to the lightweight and simple design, the wristband may be a useful technique for measuring children’s exposure. In this study, we tested the stability of flame retardant compounds in silicone wristbands and developed an analytical approach for measuring 41 flame retardants in the silicone wristband in order to evaluate exposure to these compounds in preschool-aged children. To evaluate the robustness of using wristbands to measure flame retardants, we evaluated the stability of 3 polybrominated diphenyl ethers (BDEs), and 2 organophosphate flame retardants (OPFRs) in wristbands over 84 days and did not find any evidence of significant loss over time at either 4 or −20°C (p > 0.16). We recruited a cohort of 92 preschool aged children in Oregon to wear the wristband for 7 days in order to characterize children’s acceptance of the technology, and to characterize their exposure to flame retardants. Seventy-seven parents returned the wristbands for analysis of 35 BDEs, 4 OPFRs, and 2 other brominated flame retardants although 5 were excluded from the exposure assessment due to protocol deviations (n=72). A total of 20 compounds were detected above the limit of quantitation, and 11 compounds including 4 OPFRs and 7 BDEs were detected in over 60% of the samples. Children’s gender, age, race, recruitment site, and family context were not significantly associated with returning wristbands or compliance with protocols. Comparisons between flame retardant data and socio-demographic information revealed significant differences in total exposures to both ΣBDEs and ΣOPFRs based on age of house, vacuuming frequency, and family context. These results demonstrate that preschool children in Oregon are exposed to BDEs that are no longer being produced in the United States and to OPFRs that have been used as an alternative to polybrominated

Incorporation of capsaicin in silicone coatings for enhanced antifouling performance

NASA Astrophysics Data System (ADS)

Reddy Jaggari, Karunakar; Zhang Newby, Bi-Min

2002-03-01

Successful use of capsaicin as insect and animal repellant propelled us to use it as a possible antifouling agent. Its non-toxic, non-biocidal, non-leaching properties make it a viable alternative to organotin compounds. In order to optimize the anti-fouling performance of the coating, silicone, the most effective foul-release marine coating, was chosen as the carrier. We have incorporated capsaicin into silicone coating, by both bulk entrapment and surface immobilization. Contact angle measurements on capsaicin-incorporated silicone exhibited an increase in wettability, owing to the presence of capsaicin. FTIR study further confirmed the incorporation of capsaicin in silicone. Bacterial attachment studies were conducted using lake Erie water. While bacteria liberally inhabited the control coating, their presence on the capsaicin-incorporated coating was found to be minimal. These preliminary studies indicate that capsaicin incorporated silicone could be a viable environment friendly alternative to currently used antifouling coatings.

Tunable, antibacterial activity of silicone polyether surfactants.

PubMed

Khan, Madiha F; Zepeda-Velazquez, Laura; Brook, Michael A

2015-08-01

Silicone surfactants are used in a variety of applications, however, limited data is available on the relationship between surfactant structure and biological activity. A series of seven nonionic, silicone polyether surfactants with known structures was tested for in vitro antibacterial activity against Escherichia coli BL21. The compounds varied in their hydrophobic head, comprised of branched silicone structures with 3-10 siloxane linkages and, in two cases, phenyl substitution, and hydrophilic tail of 8-44 poly(ethylene glycol) units. The surfactants were tested at three concentrations: below, at, and above their Critical Micelle Concentrations (CMC) against 5 concentrations of E. coli BL21 in a three-step assay comprised of a 14-24h turbidometric screen, a live-dead stain and viable colony counts. The bacterial concentration had little effect on antibacterial activity. For most of the surfactants, antibacterial activity was higher at concentrations above the CMC. Surfactants with smaller silicone head groups had as much as 4 times the bioactivity of surfactants with larger groups, with the smallest hydrophobe exhibiting potency equivalent to sodium dodecyl sulfate (SDS). Smaller PEG chains were similarly associated with higher potency. These data link lower micelle stability and enhanced permeability of smaller silicone head groups to antibacterial activity. The results demonstrate that simple manipulation of nonionic silicone polyether structure leads to significant changes in antibacterial activity. Copyright © 2015 Elsevier B.V. All rights reserved.

K- and L-edge X-ray absorption spectrum calculations of closed-shell carbon, silicon, germanium, and sulfur compounds using damped four-component density functional response theory.

PubMed

Fransson, Thomas; Burdakova, Daria; Norman, Patrick

2016-05-21

X-ray absorption spectra of carbon, silicon, germanium, and sulfur compounds have been investigated by means of damped four-component density functional response theory. It is demonstrated that a reliable description of relativistic effects is obtained at both K- and L-edges. Notably, an excellent agreement with experimental results is obtained for L2,3-spectra-with spin-orbit effects well accounted for-also in cases when the experimental intensity ratio deviates from the statistical one of 2 : 1. The theoretical results are consistent with calculations using standard response theory as well as recently reported real-time propagation methods in time-dependent density functional theory, and the virtues of different approaches are discussed. As compared to silane and silicon tetrachloride, an anomalous error in the absolute energy is reported for the L2,3-spectrum of silicon tetrafluoride, amounting to an additional spectral shift of ∼1 eV. This anomaly is also observed for other exchange-correlation functionals, but it is seen neither at other silicon edges nor at the carbon K-edge of fluorine derivatives of ethene. Considering the series of molecules SiH4-XFX with X = 1, 2, 3, 4, a gradual divergence from interpolated experimental ionization potentials is observed at the level of Kohn-Sham density functional theory (DFT), and to a smaller extent with the use of Hartree-Fock. This anomalous error is thus attributed partly to difficulties in correctly emulating the electronic structure effects imposed by the very electronegative fluorines, and partly due to inconsistencies in the spurious electron self-repulsion in DFT. Substitution with one, or possibly two, fluorine atoms is estimated to yield small enough errors to allow for reliable interpretations and predictions of L2,3-spectra of more complex and extended silicon-based systems.

Electronuclear paths in the nuclear conversion of molecular hydrogen in silicon

NASA Astrophysics Data System (ADS)

Ilisca, Ernest; Ghiglieno, Filippo

2017-01-01

The ortho-para conversion of hydrogen molecules oscillating inside tetrahedral cages of silicon compounds relies on the interaction of the nuclear protons with the silicon electrons. At each collision against the cage hard walls, the electron repulsion changes the molecular rotation while projecting a valence electron in the antibonding molecular state dressed by a group of conduction ones. That «bridge» facilitates the hyperfine contact of the electrons with the protons. At room temperature, the angular momentum transfer is enhanced by electron fluctuations that overcome the silicon gap and accelerate the nuclear rates by more than one order of magnitude.

Internal energy deposition with silicon nanoparticle-assisted laser desorption/ionization (SPALDI) mass spectrometry

NASA Astrophysics Data System (ADS)

Dagan, Shai; Hua, Yimin; Boday, Dylan J.; Somogyi, Arpad; Wysocki, Ronald J.; Wysocki, Vicki H.

2009-06-01

The use of silicon nanoparticles for laser desorption/ionization (LDI) is a new appealing matrix-less approach for the selective and sensitive mass spectrometry of small molecules in MALDI instruments. Chemically modified silicon nanoparticles (30 nm) were previously found to require very low laser fluence in order to induce efficient LDI, which raised the question of internal energy deposition processes in that system. Here we report a comparative study of internal energy deposition from silicon nanoparticles to previously explored benzylpyridinium (BP) model compounds during LDI experiments. The internal energy deposition in silicon nanoparticle-assisted laser desorption/ionization (SPALDI) with different fluorinated linear chain modifiers (decyl, hexyl and propyl) was compared to LDI from untreated silicon nanoparticles and from the organic matrix, [alpha]-cyano-4-hydroxycinnamic acid (CHCA). The energy deposition to internal vibrational modes was evaluated by molecular ion survival curves and indicated that the ions produced by SPALDI have an internal energy threshold of 2.8-3.7 eV. This is slightly lower than the internal energy induced using the organic CHCA matrix, with similar molecular survival curves as previously reported for LDI off silicon nanowires. However, the internal energy associated with desorption/ionization from the silicon nanoparticles is significantly lower than that reported for desorption/ionization on silicon (DIOS). The measured survival yields in SPALDI gradually decrease with increasing laser fluence, contrary to reported results for silicon nanowires. The effect of modification of the silicon particle surface with semifluorinated linear chain silanes, including fluorinated decyl (C10), fluorinated hexyl (C6) and fluorinated propyl (C3) was explored too. The internal energy deposited increased with a decrease in the length of the modifier alkyl chain. Unmodified silicon particles exhibited the highest analyte internal energy

Nanoscale doping of compound semiconductors by solid phase dopant diffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Jaehyun, E-mail: jaehyun.ahn@utexas.edu; Koh, Donghyi; Roy, Anupam

2016-03-21

Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiO{sub x}) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration ofmore » 1.4 × 10{sup 18 }cm{sup −3}. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.« less

Soft chemical synthesis of silicon nanosheets and their applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakano, Hideyuki; Ikuno, Takashi

2016-12-15

Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat andmore » smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.« less

Metalloid compounds as drugs

PubMed Central

Sekhon, B. S.

2013-01-01

The six elements commonly known as metalloids are boron, silicon, germanium, arsenic, antimony, and tellurium. Metalloid containing compounds have been used as antiprotozoal drugs. Boron-based drugs, the benzoxaboroles have been exploited as potential treatments for neglected tropical diseases. Arsenic has been used as a medicinal agent and arsphenamine was the main drug used to treat syphilis. Arsenic trioxide has been approved for the treatment of acute promyelocytic leukemia. Pentavalent antimonials have been the recommended drug for visceral leishmaniasis and cutaneous leishmaniasis. Tellurium (IV) compounds may have important roles in thiol redox biological activity in the human body, and ammonium trichloro (dioxoethylene-O, O’-)tellurate (AS101) may be a promising agent for the treatment of Parkinson’s disease. Organosilicon compounds have been shown to be effective in vitro multidrug-resistance reverting agents. PMID:24019824

Fabrication of sinterable silicon nitride by injection molding

NASA Technical Reports Server (NTRS)

Quackenbush, C. L.; French, K.; Neil, J. T.

1982-01-01

Transformation of structural ceramics from the laboratory to production requires development of near net shape fabrication techniques which minimize finish grinding. One potential technique for producing large quantities of complex-shaped parts at a low cost, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material. Binder selection methodology, compounding of ceramic and binder components, injection molding techniques, and problems in binder removal are discussed. Strength, oxidation resistance, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material.

Silicon nitride/silicon carbide composite powders

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-06-11

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Gluing silicon with silicone

NASA Astrophysics Data System (ADS)

Abt, I.; Fox, H.; Moshous, B.; Richter, R. H.; Riechmann, K.; Rietz, M.; Riedl, J.; Denis, R. St; Wagner, W.

1998-02-01

Problems and solutions concerning the gluing of silicon detectors are discussed. The R & D work for the HERA- B vertex detector system led to gluing studies with epoxy and silicone-based adhesives used on ceramics and carbon fibre. The HERA- B solution using a silicone glue is presented.

Modified silicon carbide whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1991-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Modified silicon carbide whiskers

DOEpatents

Tiegs, T.N.; Lindemer, T.B.

1991-05-21

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

1995-01-01

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

Spectral parameters and Hamaker constants of silicon hydride compounds and organic solvents.

PubMed

Masuda, Takashi; Matsuki, Yasuo; Shimoda, Tatsuya

2009-12-15

Cyclopentasilane (CPS) and polydihydrosilane, which consist of hydrogen and silicon only, are unique materials that can be used to produce intrinsic silicon film in a liquid process, such as spin coating or an ink-jet method. Wettability and solubility of general organic solvents including the above can be estimated by Hamaker constants, which are calculated according to the Lifshitz theory. In order to calculate a Hamaker constant by the simple spectral method (SSM), it is necessary to obtain absorption frequency and function of oscillator strength in the ultraviolet region. In this report, these physical quantities were obtained by means of an optical method. As a result of examination of the relation between molecular structures and ultraviolet absorption frequencies, which were obtained from various liquid materials, it was concluded that ultraviolet absorption frequencies became smaller as electrons were delocalized. In particular, the absorption frequencies were found to be very small for CPS and polydihydrosilane due to sigma-conjugate of their electrons. The Hamaker constants of CPS and polydihydrosilane were successfully calculated based on the obtained absorption frequency and function of oscillator strength.

Neutral six-coordinate bis(dithiocarbamato)silicon(iv) complexes with an SiCl2S4 skeleton.

PubMed

Baus, Johannes A; Tacke, Reinhold

2017-07-11

Treatment of SiCl 4 with lithium dithiocarbamates of the formula type Li[R 2 NCS 2 ] (R = Ph, iPr) in a molar ratio of 1 : 2 afforded the respective six-coordinate silicon(iv) complexes [Ph 2 NCS 2 ] 2 SiCl 2 (3) and [iPr 2 NCS 2 ] 2 SiCl 2 (4), which were isolated as the solvates 3·MeCN and 4·MeCN. Compounds 3·MeCN and 4·MeCN were structurally characterised by single-crystal X-ray diffraction and multinuclear NMR spectroscopic studies in the solid state and in solution. In this study, dithiocarbamato ligands were implemented in silicon coordination chemistry for the first time. Compounds 3 and 4 represent the first six-coordinate silicon(iv) complexes with an SiCl 2 S 4 skeleton.

Single Stage Silicone Border Molded Closed Mouth Impression Technique-Part II.

PubMed

Solomon, E G R

2011-09-01

Functioning of a complete denture depends to a great extent on the impression technique. Several impression techniques have been described in the literature since the turn of this century when Greene [Clinical courses in dental prothesis, 1916] brothers introduced the first scientific system of recording dental impression. Advocates of each technique have their own claim of superiority over the other. The introduction of elastomeric impression materials [Skinner and Cooper, J Am Dent Assoc 51:523-536, 1955] has made possible new techniques of recording impression for complete denture construction. These rubber like materials are of two types; one has a polysulfide base and is popularily known as polysulfide rubber (Thiokol and Mercaptan). The other variety has a silicone base known as silicone rubber or silicone elastomer. Silicone elastomers are available in four different consistencies; a thin easy flowing light bodied material,a creamy medium bodied material, a highly viscous heavy bodied material and a kneadable putty material. This paper describes an active closed mouth impression technique with one stage border molding using putty silicone material as a substitute for low fusing compound.

Lewis Acidity of Bis(perfluorocatecholato)silane: Aldehyde Hydrosilylation Catalyzed by a Neutral Silicon Compound

DOE PAGES

Liberman-Martin, Allegra L.; Bergman, Robert G.; Tilley, T. Don

2015-04-16

Bis(perfluorocatecholato)silane Si(cat( F) 2 was prepared, and stoichiometric binding to Lewis bases was demonstrated with fluoride, triethylphosphine oxide, and N,N'-diisopropylbenzamide. The potent Lewis acidity of Si(cat( F) 2 was suggested from catalytic hydrosilylation and silylcyanation reactions with aldehydes. Mechanistic studies of hydrosilylation using an optically active silane substrate, R-(+)-methyl-(1-naphthyl)phenylsilane, proceeded with predominant stereochemical retention at silicon, consistent with a carbonyl activation pathway. The enantiospecificity was dependent on solvent and salt effects, with increasing solvent polarity or addition of NBu 4BAr( F) 4 leading to a diminished enantiomeric ratio. The medium effects are consistent with an ionic mechanism, wherein hydride transfermore » occurs prior to silicon-oxygen bond formation.« less

Adhesion of Silicone Elastomer Seals for NASA's Crew Exploration Vehicle

NASA Technical Reports Server (NTRS)

deGroh, Henry C., III; Miller, Sharon K. R.; Smith, Ian M.; Daniels, Christopher C.; Steinetz, Bruce M

2008-01-01

Silicone rubber seals are being considered for a number of interfaces on NASA's Crew Exploration Vehicle (CEV). Some of these joints include the docking system, hatches, and heat shield-to-back shell interface. A large diameter molded silicone seal is being developed for the Low Impact Docking System (LIDS) that forms an effective seal between the CEV and International Space Station (ISS) and other future Constellation Program spacecraft. Seals between the heat shield and back shell prevent high temperature reentry gases from leaking into the interface. Silicone rubber seals being considered for these locations have inherent adhesive tendencies that would result in excessive forces required to separate the joints if left unchecked. This paper summarizes adhesion assessments for both as-received and adhesion-mitigated seals for the docking system and the heat shield interface location. Three silicone elastomers were examined: Parker Hannifin S0899-50 and S0383-70 compounds, and Esterline ELA-SA-401 compound. For the docking system application various levels of exposure to atomic oxygen (AO) were evaluated. Moderate AO treatments did not lower the adhesive properties of S0899-50 sufficiently. However, AO pretreatments of approximately 10(exp 20) atoms/sq cm did lower the adhesion of S0383-70 and ELA-SA-401 to acceptable levels. For the heat shield-to-back shell interface application, a fabric covering was also considered. Molding Nomex fabric into the heat shield pressure seal appreciably reduced seal adhesion for the heat shield-to-back shell interface application.

Development of a model and computer code to describe solar grade silicon production processes

NASA Technical Reports Server (NTRS)

Srivastava, R.; Gould, R. K.

1979-01-01

Mathematical models, and computer codes based on these models were developed which allow prediction of the product distribution in chemical reactors in which gaseous silicon compounds are converted to condensed phase silicon. The reactors to be modeled are flow reactors in which silane or one of the halogenated silanes is thermally decomposed or reacted with an alkali metal, H2 or H atoms. Because the product of interest is particulate silicon, processes which must be modeled, in addition to mixing and reaction of gas-phase reactants, include the nucleation and growth of condensed Si via coagulation, condensation, and heterogeneous reaction.

Progress in the medicinal chemistry of silicon: C/Si exchange and beyond.

PubMed

Fujii, Shinya; Hashimoto, Yuichi

2017-04-01

Application of silyl functionalities is one of the most promising strategies among various 'elements chemistry' approaches for the development of novel and distinctive drug candidates. Replacement of one or more carbon atoms of various biologically active compounds with silicon (so-called sila-substitution) has been intensively studied for decades, and is often effective for alteration of activity profile and improvement of metabolic profile. In addition to simple C/Si exchange, several novel approaches for utilizing silicon in medicinal chemistry have been suggested in recent years, focusing on the intrinsic differences between silicon and carbon. Sila-substitution offers great potential for enlarging the chemical space of medicinal chemistry, and provides many options for structural development of drug candidates.

Silicon surface passivation by silicon nitride deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

Nonlinear conductivity in silicon nitride

NASA Astrophysics Data System (ADS)

Tuncer, Enis

2017-08-01

To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

Field Evaluation of Anti-Biofouling Compounds on Optical Instrumentation

NASA Technical Reports Server (NTRS)

McLean, Scott; Schofield, Bryan; Zibordi, Giuseppe; Lewis, Marlon; Hooker, Stanford; Weidemann, Alan

1997-01-01

Biofouling has been a serious question in the stability of optical measurements in the ocean, particularly in moored and drifting buoy applications. Many investigators coat optical surfaces with various compounds to reduce the amount of fouling; to our knowledge, however, there are no objective, in-situ comparative testing of these compounds to evaluate their effectiveness with respect to optical stability relative to untreated controls. We have tested a wide range of compounds at in-situ locations in Halifax Harbour and in the Adriatic Sea on passive optical sensors. Compounds tested include a variety of TBT formulations, antifungal agents, and low-friction silicone-based compounds; time-scales of up to four months were evaluated. The results of these experiments are discussed.

Method for producing silicon nitride/silicon carbide composite

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-07-23

Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

Silicone metalization

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter [Pleasanton, CA; Hamilton, Julie [Tracy, CA

2006-12-05

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Silicone metalization

DOEpatents

Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

NASA Astrophysics Data System (ADS)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

PubMed Central

Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

2016-01-01

Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

Metal-Element Compounds of Titanium, Zirconium, and Hafnium as Pyrotechnic Fuels

DTIC Science & Technology

2015-05-04

including ceramic materials in this role has been far less common. Following the development of boron carbide-based pyrotechnics in our laboratories, we...ameliorate these problems. Commercially available group 4 compounds containing hydrogen, boron , carbon, nitrogen, silicon, and phosphorus were obtained for...predicted behavior suggests that these compounds may be useful for a variety of pyrotechnic applications. 1. INTRODUCTION The recent use of boron

Silicon solar cells: Past, present and the future

NASA Astrophysics Data System (ADS)

Lee, Youn-Jung; Kim, Byung-Sung; Ifitiquar, S. M.; Park, Cheolmin; Yi, Junsin

2014-08-01

There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an oversupply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL — structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon — based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon — based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon

PubMed Central

Girel, Kseniya V.; Panarin, Andrei; Terekhov, Sergei N.

2018-01-01

The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy. PMID:29883382

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.

PubMed

Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N

2018-05-21

The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Particle size distribution of aerosols sprayed from household hand-pump sprays containing fluorine-based and silicone-based compounds.

PubMed

Kawakami, Tsuyoshi; Isama, Kazuo; Ikarashi, Yoshiaki

2015-01-01

Japan has published safety guideline on waterproof aerosol sprays. Furthermore, the Aerosol Industry Association of Japan has adopted voluntary regulations on waterproof aerosol sprays. Aerosol particles of diameter less than 10 µm are considered as "fine particles". In order to avoid acute lung injury, this size fraction should account for less than 0.6% of the sprayed aerosol particles. In contrast, the particle size distribution of aerosols released by hand-pump sprays containing fluorine-based or silicone-based compounds have not been investigated in Japan. Thus, the present study investigated the aerosol particle size distribution of 16 household hand-pump sprays. In 4 samples, the ratio of fine particles in aerosols exceeded 0.6%. This study confirmed that several hand-pump sprays available in the Japanese market can spray fine particles. Since the hand-pump sprays use water as a solvent and their ingredients may be more hydrophilic than those of aerosol sprays, the concepts related to the safety of aerosol-sprays do not apply to the hand pump sprays. Therefore, it may be required for the hand-pump spray to develop a suitable method for evaluating the toxicity and to establish the safety guideline.

Biological and therapeutic effects of ortho-silicic acid and some ortho-silicic acid-releasing compounds: New perspectives for therapy.

PubMed

Jurkić, Lela Munjas; Cepanec, Ivica; Pavelić, Sandra Kraljević; Pavelić, Krešimir

2013-01-08

Silicon (Si) is the most abundant element present in the Earth's crust besides oxygen. However, the exact biological roles of silicon remain unknown. Moreover, the ortho-silicic acid (H4SiO4), as a major form of bioavailable silicon for both humans and animals, has not been given adequate attention so far. Silicon has already been associated with bone mineralization, collagen synthesis, skin, hair and nails health atherosclerosis, Alzheimer disease, immune system enhancement, and with some other disorders or pharmacological effects. Beside the ortho-silicic acid and its stabilized formulations such as choline chloride-stabilized ortho-silicic acid and sodium or potassium silicates (e.g. M2SiO3; M= Na,K), the most important sources that release ortho-silicic acid as a bioavailable form of silicon are: colloidal silicic acid (hydrated silica gel), silica gel (amorphous silicon dioxide), and zeolites. Although all these compounds are characterized by substantial water insolubility, they release small, but significant, equilibrium concentration of ortho-silicic acid (H4SiO4) in contact with water and physiological fluids. Even though certain pharmacological effects of these compounds might be attributed to specific structural characteristics that result in profound adsorption and absorption properties, they all exhibit similar pharmacological profiles readily comparable to ortho-silicic acid effects. The most unusual ortho-silicic acid-releasing agents are certain types of zeolites, a class of aluminosilicates with well described ion(cation)-exchange properties. Numerous biological activities of some types of zeolites documented so far might probably be attributable to the ortho-silicic acid-releasing property. In this review, we therefore discuss biological and potential therapeutic effects of ortho-silicic acid and ortho-silicic acid -releasing silicon compounds as its major natural sources.

Roles of Acetone and Diacetone Alcohol in Coordination and Dissociation Reactions of Uranyl Complexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rios, Daniel; Schoendorff, George E.; Van Stipdonk, Michael J.

2012-12-03

Combined collision-induced dissociation mass-spectrometry experiments and DFT calculations were employed to elucidate the molecular structure of "hypercoordinated" species and the energetics of water-elimination reactions of uranyl acetone complexes observed in earlier work (Rios, D.; Rutkowski, P. X.; Van Stipdonk, M. J.; Gibson, J. K. Inorg. Chem. 2011, 50, 4781). It is shown that the "hypercoordinated" species contain diacetone alcohol ligands bonded in either bidentate or monodentate fashion, which are indistinguishable from (acetone)2 in mass spectrometry. Calculations confirm that four diacetone ligands can form stable complexes, but that the effective number of atoms coordinating with uranium in the equatorial plane doesmore » not exceed five. Diacetone alcohol ligands are shown to form mesityl oxide ligands and alkoxide species through the elimination of water, providing an explanation for the observed water-elimination reactions.« less

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

NASA Technical Reports Server (NTRS)

Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

1986-01-01

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

Retention Indices for Frequently Reported Compounds of Plant Essential Oils

NASA Astrophysics Data System (ADS)

Babushok, V. I.; Linstrom, P. J.; Zenkevich, I. G.

2011-12-01

Gas chromatographic retention indices were evaluated for 505 frequently reported plant essential oil components using a large retention index database. Retention data are presented for three types of commonly used stationary phases: dimethyl silicone (nonpolar), dimethyl silicone with 5% phenyl groups (slightly polar), and polyethylene glycol (polar) stationary phases. The evaluations are based on the treatment of multiple measurements with the number of data records ranging from about 5 to 800 per compound. Data analysis was limited to temperature programmed conditions. The data reported include the average and median values of retention index with standard deviations and confidence intervals.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

NASA Astrophysics Data System (ADS)

Naddaf, M.

2017-01-01

Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film

DOEpatents

Carlson, David E.

1980-01-01

The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.

Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces.

PubMed

Zhukhovitskiy, Aleksandr V; Mavros, Michael G; Queeney, K T; Wu, Tony; Voorhis, Troy Van; Johnson, Jeremiah A

2016-07-13

Surface passivation has enabled the development of silicon-based solar cells and microelectronics. However, a number of emerging applications require a paradigm shift from passivation to functionalization, wherein surface functionality is installed proximal to the silicon surface. To address this need, we report here the use of persistent aminocarbenes to functionalize hydrogen-terminated silicon surfaces via Si-H insertion reactions. Through the use of model compounds (H-Si(TMS)3 and H-Si(OTMS)3), nanoparticles (H-SiNPs), and planar Si(111) wafers (H-Si(111)), we demonstrate that among different classes of persistent carbenes, the more electrophilic and nucleophilic ones, in particular, a cyclic (alkyl)(amino)carbene (CAAC) and an acyclic diaminocarbene (ADAC), are able to undergo insertion into Si-H bonds at the silicon surface, forming persistent C-Si linkages and simultaneously installing amine or aminal functionality in proximity to the surface. The CAAC (6) is particularly notable for its clean insertion reactivity under mild conditions that produces monolayers with 21 ± 3% coverage of Si(111) atop sites, commensurate with the expected maximum of ∼20%. Atomic force and transmission electron microscopy, nuclear magnetic resonance, X-ray photoelectron, and infrared spectroscopy, and time-of-flight secondary ion mass spectrometry provided evidence for the surface Si-H insertion process. Furthermore, computational studies shed light on the reaction energetics and indicated that CAAC 6 should be particularly effective at binding to silicon dihydride, trihydride, and coupled monohyride motifs, as well as oxidized surface sites. Our results pave the way for the further development of persistent carbenes as universal ligands for silicon and potentially other nonmetallic substrates.

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Method for removing oxide contamination from silicon carbide powders

DOEpatents

Brynestad, J.; Bamberger, C.E.

1984-08-01

The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

Bio-inspired hemispherical compound eye camera

NASA Astrophysics Data System (ADS)

Xiao, Jianliang; Song, Young Min; Xie, Yizhu; Malyarchuk, Viktor; Jung, Inhwa; Choi, Ki-Joong; Liu, Zhuangjian; Park, Hyunsung; Lu, Chaofeng; Kim, Rak-Hwan; Li, Rui; Crozier, Kenneth B.; Huang, Yonggang; Rogers, John A.

2014-03-01

Compound eyes in arthropods demonstrate distinct imaging characteristics from human eyes, with wide angle field of view, low aberrations, high acuity to motion and infinite depth of field. Artificial imaging systems with similar geometries and properties are of great interest for many applications. However, the challenges in building such systems with hemispherical, compound apposition layouts cannot be met through established planar sensor technologies and conventional optics. We present our recent progress in combining optics, materials, mechanics and integration schemes to build fully functional artificial compound eye cameras. Nearly full hemispherical shapes (about 160 degrees) with densely packed artificial ommatidia were realized. The number of ommatidia (180) is comparable to those of the eyes of fire ants and bark beetles. The devices combine elastomeric compound optical elements with deformable arrays of thin silicon photodetectors, which were fabricated in the planar geometries and then integrated and elastically transformed to hemispherical shapes. Imaging results and quantitative ray-tracing-based simulations illustrate key features of operation. These general strategies seem to be applicable to other compound eye devices, such as those inspired by moths and lacewings (refracting superposition eyes), lobster and shrimp (reflecting superposition eyes), and houseflies (neural superposition eyes).

Determination of silicone rubber and low-density polyethylene diffusion and polymer/water partition coefficients for emerging contaminants.

PubMed

Pintado-Herrera, Marina G; Lara-Martín, Pablo A; González-Mazo, Eduardo; Allan, Ian J

2016-09-01

There is a growing interest in assessing the concentration and distribution of new nonregulated organic compounds (emerging contaminants) in the environment. The measurement of freely dissolved concentrations using conventional approaches is challenging because of the low concentrations that may be encountered and their temporally variable emissions. Absorption-based passive sampling enables the estimation of freely dissolved concentrations of hydrophobic contaminants of emerging concern in water. In the present study, calibration was undertaken for 2 polymers, low-density polyethylene (LDPE) and silicone rubber for 11 fragrances, 5 endocrine-disrupting compounds, 7 ultraviolet (UV) filters, and 8 organophosphate flame retardant compounds. Batch experiments were performed to estimate contaminant diffusion coefficients in the polymers (Dp ), which in general decreased with increasing molecular weight. The values for fragrances, endocrine-disrupting compounds, and UV filters were in ranges similar to those previously reported for polycyclic aromatic hydrocarbons, but were 1 order of magnitude lower for organophosphate flame retardant compounds. Silicone rubber had higher Dp values than LDPE and was therefore selected for further experiments to calculate polymer/water partition coefficients (KPW ). The authors observed a positive correlation between log KPW and log octanol/water partition coefficient values. Field testing of silicone rubber passive samplers was undertaken though exposure in the River Alna (Norway) for an exposure time of 21 d to estimate freely dissolved concentration. Some fragrances and UV filters were predominant over other emerging and regulated contaminants, at levels up to 1600 ng L(-1) for galaxolide and 448 ng L(-1) for octocrylene. Environ Toxicol Chem 2016;35:2162-2172. © 2016 SETAC. © 2016 SETAC.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Study on Silicon Microstructure Processing Technology Based on Porous Silicon

NASA Astrophysics Data System (ADS)

Shang, Yingqi; Zhang, Linchao; Qi, Hong; Wu, Yalin; Zhang, Yan; Chen, Jing

2018-03-01

Aiming at the heterogeneity of micro - sealed cavity in silicon microstructure processing technology, the technique of preparing micro - sealed cavity of porous silicon is proposed. The effects of different solutions, different substrate doping concentrations, different current densities, and different etching times on the rate, porosity, thickness and morphology of the prepared porous silicon were studied. The porous silicon was prepared by different process parameters and the prepared porous silicon was tested and analyzed. For the test results, optimize the process parameters and experiments. The experimental results show that the porous silicon can be controlled by optimizing the parameters of the etching solution and the doping concentration of the substrate, and the preparation of porous silicon with different porosity can be realized by different doping concentration, so as to realize the preparation of silicon micro-sealed cavity, to solve the sensor sensitive micro-sealed cavity structure heterogeneous problem, greatly increasing the application of the sensor.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

2002-01-01

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

1999-01-01

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Effect of organo-clay on the dielectric relaxation response of silicone rubber

NASA Astrophysics Data System (ADS)

Gharavi, N.; Razzaghi-Kashani, M.; Golshan-Ebrahimi, N.

2010-02-01

Dielectric elastomers are light weight, low-cost, highly deformable and fast response smart materials capable of converting electrical energy into mechanical work or vice versa. Silicone rubber is a well-known dielectric elastomer which is used as actuator, and in order to enhance the efficiency of this smart material, compounding of silicone rubber with various fillers can be carried out. The effect of organically modified montmorillonite (OMMT) nano-clay on improvement of dielectric properties, actuation stress and its relaxation response was considered in this study. OMMT was dispersed in room temperature vulcanized (RTV) silicone rubber, and a composite film was cast. Using an in-house actuation set-up, it was shown that the actuation stress for a given electric field intensity is higher for composites than that for pristine silicone rubber. Also, the time-dependent actuation response of the samples was evaluated, and it was shown that the characteristic relaxation time of the actuation stress for composites is less than for the pristine rubber as a result of OMMT addition.

Silicon nitride/silicon carbide composite densified materials prepared using composite powders

DOEpatents

Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

1997-07-01

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Solution immersed silicon (SIS)-based biosensors: a new approach in biosensing.

PubMed

Diware, M S; Cho, H M; Chegal, W; Cho, Y J; Jo, J H; O, S W; Paek, S H; Yoon, Y H; Kim, D

2015-02-07

A novel, solution immersed silicon (SIS)-based sensor has been developed which employs the non-reflecting condition (NRC) for a p-polarized wave. The SIS sensor's response is almost independent of change in the refractive index (RI) of a buffer solution (BS) which makes it capable of measuring low-concentration and/or low-molecular-weight compounds.

IMPROVEMENTS IN POLLUTANT MONITORING: OPTIMIZING SILICONE FOR CO-DEPLOYMENT WITH POLYETHYLENE PASSIVE SAMPLING DEVICES

PubMed Central

O’Connell, Steven G.; McCartney, Melissa A.; Paulik, L. Blair; Allan, Sarah E.; Tidwell, Lane G.; Wilson, Glenn; Anderson, Kim A.

2014-01-01

Sequestering semi-polar compounds can be difficult with low-density polyethylene (LDPE), but those pollutants may be more efficiently absorbed using silicone. In this work, optimized methods for cleaning, infusing reference standards, and polymer extraction are reported along with field comparisons of several silicone materials for polycyclic aromatic hydrocarbons (PAHs) and pesticides. In a final field demonstration, the most optimal silicone material is coupled with LDPE in a large-scale study to examine PAHs in addition to oxygenated-PAHs (OPAHs) at a Superfund site. OPAHs exemplify a sensitive range of chemical properties to compare polymers (log Kow 0.2–5.3), and transformation products of commonly studied parent PAHs. On average, while polymer concentrations differed nearly 7-fold, water-calculated values were more similar (about 3.5-fold or less) for both PAHs (17) and OPAHs (7). Individual water concentrations of OPAHs differed dramatically between silicone and LDPE, highlighting the advantages of choosing appropriate polymers and optimized methods for pollutant monitoring. PMID:25009960

Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

1984-01-01

Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

Aminosilane functionalizations of mesoporous oxidized silicon for oligonucleotide synthesis and detection

PubMed Central

De Stefano, Luca; Oliviero, Giorgia; Amato, Jussara; Borbone, Nicola; Piccialli, Gennaro; Mayol, Luciano; Rendina, Ivo; Terracciano, Monica; Rea, Ilaria

2013-01-01

Direct solid phase synthesis of peptides and oligonucleotides (ONs) requires high chemical stability of the support material. In this work, we have investigated the passivation ability of porous oxidized silicon multilayered structures by two aminosilane compounds, 3-aminopropyltriethoxysilane and 3-aminopropyldimethylethoxysilane (APDMES), for optical label-free ON biosensor fabrication. We have also studied by spectroscopic reflectometry the hybridization between a 13 bases ON, directly grown on the aminosilane modified porous oxidized silicon by in situ synthesis, and its complementary sequence. Even if the results show that both devices are stable to the chemicals (carbonate/methanol) used, the porous silica structure passivated by APDMES reveals higher functionalization degree due to less steric hindrance of pores. PMID:23536541

[Determination of organotin compounds in plastic products by GC/MS after ethyl derivatization with sodium tetraethylborate].

PubMed

Ohno, Hiroyuki; Suzuki, Masako; Nakashima, Shigehito; Aoyama, Taiki; Mitani, Kazunori

2002-08-01

A simultaneous determination method for 9 organotin compounds in polyvinyl chloride (PVC) and silicone products used as kitchen utensils and food packages was developed using ethyl derivatization with sodium tetraethylborate (NaBEt4). Organotin compounds were extracted with acetone-hexane (3:7) from the samples after acidification and the extract was filtered and concentrated at under 40 degrees C. After centrifugal separation, these compounds were derivatized with 2% NaBEt4 solution and determined by GC/MS. This method was applicable for simple routine analysis. Recoveries of spiked compounds were 49.1-118.1% for 3 PVC products and 88.8-102.2% for a siliconized paper. Monooctyltin, dioctyltin and trioctyltin compounds were found in all PVC food containers at the levels of 123-1,380 micrograms/g, 1,770-13,200 micrograms/g and 6.6-139 micrograms/g, respectively. They also were found in 3 gloves, 5 spouts, 1 hose and 5 pipes. Some PVC products contained monomethyltin, dimethyltin, trimethyltin, monobutyltin and dibutyltin compounds at the levels of 97.3-433 micrograms/g, 96.5-5,120 micrograms/g, 8.5-24.9 micrograms/g, 1.2-852 micrograms/g and 1.2-29.4 micrograms/g, respectively.

Analysis of periprosthetic capsular tissue from women with silicone breast implants by magic-angle spinning NMR.

PubMed

Garrido, L; Young, V L

1999-09-01

The amount of silicone (polydimethylsiloxane [PDMS]) in capsular tissue surgically removed from women with breast implants was measured by using (29)Si and (1)H magic-angle spinning solid-state NMR spectroscopy. Twelve women having smooth surface silicone gel-filled implants, including a subject with "low-bleed" double-lumen implants, had detectable levels of PDMS ranging from 0. 05 to 9.8% silicon in wet tissue (w/w). No silicon-containing compounds other than PDMS were detected. No correlation was found between the amount of PDMS measured in the capsular tissue and the length of implantation time (Pearson correlation coefficient, r = 0. 22). The results showed no relationship between higher amounts of PDMS and capsular contracture (p = 0.74) or other symptoms (p = 0. 53). Magn Reson Med 42:436-441, 1999. Copyright 1999 Wiley-Liss, Inc.

Silicone rubber selection for passive sampling of pesticides in water.

PubMed

Martin, A; Margoum, C; Randon, J; Coquery, M

2016-11-01

Silicone rubber can extract organic compounds with a broad range of polarities (logKow>2-3) from aqueous samples. Such compounds include substances of major concern in the protection of aquatic ecosystems and human health, e.g. pesticides. Silicone rubbers (SRs) with various characteristics have been successfully used in sorptive methods for water sample extraction in the laboratory (SPME, SBSE), and for passive sampling in aquatic environments. However, only few studies have evaluated variability in organic compound sorption due to the origin of SRs, particularly for pesticides. The aim of this study was to select an SR for the extraction of pesticides from water samples by passive sampling. To this end we measured the impact of seven SR formulations on sorption capacity, defined by the partition coefficient (Ksw). Kinetic experiments and sorption isotherms were performed to determine extraction recovery as a selection criterion for SRs, and pesticide partition coefficients. Very large differences in affinity for pesticides were found between two kinds of SRs: "Polymerized SR kits" and "Manufactured SRs". One SR was chosen among the "Manufactured SRs", and the Ksw values of 21 pesticides were determined, filling a gap in the literature (1.50

Organic filler from golden apple snails shells to improve the silicone rubber insulator properties

NASA Astrophysics Data System (ADS)

Tepsila, Sujirat; Suksri, Amnart

2018-02-01

This paper investigates the effect of an addition of filler compound using golden apple snail shell as an organic filler to the silicone rubber insulator. The filler obtained from golden apple snail shell is found mostly contained calcium carbonate. The organic calcium carbonate (CaCO3) with particle size of 45, 75, 100 and 300 micron were prepared. Sample of silicone rubber that were filled with fillers were tested under ASTM D638-02a type standard for mechanical test. Also, electrical test such as I-V characteristics (ASTM D257-07) and dry arc test according to ASTM D495-14 have been performed. The results revealed that using larger particle size of organic filler obtained from the golden apple snail shell resulted to higher value of dielectric constant as well as higher dielectric strength. Also, the filler helps slow down the tracking activity at an insulator surface due to its crystals of calcium carbonate. However, when using excessive amount of filler, the sample will have a drawbacks in mechanical properties. By using agriculture waste as a filler compound, one can reduced the usage of commercial CaCO3 as an inorganic materials and to lower the investment cost to a final silicone rubber product.

Glass-silicon column

DOEpatents

Yu, Conrad M.

2003-12-30

A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

Silicon-Containing Amino Acids: Synthetic Aspects, Conformational Studies, and Applications to Bioactive Peptides.

PubMed

Rémond, Emmanuelle; Martin, Charlotte; Martinez, Jean; Cavelier, Florine

2016-10-12

Unnatural α-amino acids form a family of essential molecules used for, among other applications, the synthesis of modified peptides, to improve resistance to proteolytic enzyme degradation, and to modulate physico- and biochemical properties of bioactive peptides as well as chiral inducers in asymmetric synthesis. Among them, silicon-containing unnatural amino acids are becoming an interesting new class of building blocks. The replacement of carbon atoms in bioactive substances with silicon is becoming increasingly popular. Peptides containing silyl amino acids hold great promise for maintaining or reinforcing the biological activity of active compounds, while they simultaneously enhance their resistance to enzyme degradation. In addition, the lipophilicity of the silicon atom facilitates their membrane crossing and their bioavailability. Nowadays, the interest of the pharmaceutical industry in peptide- and protein-based therapies is increasing. In this respect, silicon-containing amino acids and peptides are likely to be a significant part of future innovations in this area, and more generally in the area of biomolecules. In this process, commercial availability of silicon-containing amino acids is necessary: new syntheses have been developed, and work in this area is ongoing. This review aims to be a comprehensive and general summary of the different methods used to prepare silicon-containing amino acids and their implications on conformational structures and biological applications when they are incorporated into bioactive molecules.

In vivo contaminant partitioning to silicone implants: Implications for use in biomonitoring and body burden.

PubMed

O'Connell, Steven G; Kerkvliet, Nancy I; Carozza, Susan; Rohlman, Diana; Pennington, Jamie; Anderson, Kim A

2015-12-01

Silicone polymers are used for a wide array of applications from passive samplers in environmental studies, to implants used in human augmentation and reconstruction. If silicone sequesters toxicants throughout implantation, it may represent a history of exposure and potentially reduce the body burden of toxicants influencing the risk of adverse health outcomes such as breast cancer. Objectives of this research included identifying a wide variety of toxicants in human silicone implants, and measuring the in vivo absorption of contaminants into silicone and surrounding tissue in an animal model. In the first study, eight human breast implants were analyzed for over 1400 organic contaminants including consumer products, chemicals in commerce, and pesticides. A total of 14 compounds including pesticides such as trans-nonachlor (1.2-5.9ng/g) and p,p'-DDE (1.2-34ng/g) were identified in human implants, 13 of which have not been previously reported in silicone prostheses. In the second project, female ICR mice were implanted with silicone and dosed with p,p'-DDE and PCB118 by intraperitoneal injection. After nine days, silicone and adipose samples were collected, and all implants in dosed mice had p,p'-DDE and PCB118 present. Distribution ratios from silicone and surrounding tissue in mice compare well with similar studies, and were used to predict adipose concentrations in human tissue. Similarities between predicted and measured chemical concentrations in mice and humans suggest that silicone may be a reliable surrogate measure of persistent toxicants. More research is needed to identify the potential of silicone implants to refine the predictive quality of chemicals found in silicone implants. Copyright © 2015 Elsevier Ltd. All rights reserved.

Silicon Utilizing Microbial Bioactivities in the Biosphere

NASA Astrophysics Data System (ADS)

Sen, M. M.; Das, S.

2012-12-01

Diatoms are unicellular eukaryotic algae and an important member of the silicon utilizing organisms, that generate ~20% of the ~100 billion metric tons of organic carbon produced through photosynthesis on Earth each year. Fragilariopsis is a dominating psychrophilic diatom genus in polar sea ice. The two species Fragilariopsis cylindrus and Fragilariopsis curta are able to grow and divide below freezing temperature. Antifreeze proteins (AFPs), involved in cold adaptation in several psychrophilic organisms, are widespread in this two polar species. Achanthes minutissima isolated as dominant diatom has degradable effects involving petroleum hydocarbons. Phaeodactylum tricornutum, have antibacterial activity and the fatty acid, eicosapentaenoic acid (EPA), has been identified as one compound responsible for this activity. Other antibacterial compounds are monounsaturated fatty acid (9Z)-hexadecenoic acid (palmitoleic acid; C16:1 n-7) and the relatively unusual polyunsaturated fatty acid (6Z, 9Z, 12Z)-hexadecatrienoic acid (HTA; C16:3 n-4). Both are active against Gram-positive bacteria and many Gram-negative pathogen. Palmitoleic acid is active at micro-molar concentrations, kills bacteria rapidly, and is highly active against multidrug-resistant Staphylococcus aureus. Domoic acid -a neurotoxin produced by Pseudo-nitzschia accumulates in marine invertebrates. Evidences of sea lion (Zalophus californianus) and human poisoning following consumption of contaminated blue mussels (Mytilus edulis) is mainly due to this toxin. Among the most prominent features described in human beings was memory impairment which led to the name Amnesic Shellfish Poisoning [ASP]. Silicon utilizing organisms can act as a bioindicator of environmental contamination, thus a rapid change in phytochelatins to both the increase in and the withdrawal of environmental Cd stress was found in Thalassiosira nordenskioeldii. Some of them also can produce biofuels particularly diatoms have significant

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

High precision measurement of silicon in naphthas by ICP-OES using isooctane as diluent.

PubMed

Gazulla, M F; Rodrigo, M; Orduña, M; Ventura, M J; Andreu, C

2017-03-01

An analytical protocol for the accurate and precise determination of Si in naphthas is presented by using ICP-OES, optimizing from the sample preparation to the measurement conditions, in order to be able to analyze for the first time silicon contents below 100µgkg -1 in a relatively short time thus being used as a control method. In the petrochemical industry, silicon can be present as a contaminant in different petroleum products such as gasoline, ethanol, or naphthas, forming different silicon compounds during the treatment of these products that are irreversibly adsorbed onto catalyst surfaces decreasing its time life. The complex nature of the organic naphtha sample together with the low detection limits needed make the analysis of silicon quite difficult. The aim of this work is to optimize the measurement of silicon in naphthas by ICP-OES introducing as an improvement the use of isooctane as diluent. The set up was carried out by optimizing the measurement conditions (power, nebulizer flow, pump rate, read time, and viewing mode) and the sample preparation (type of diluent, cleaning process, blanks, and studying various dilution ratios depending on the sample characteristics). Copyright © 2016 Elsevier B.V. All rights reserved.

Purified silicon production system

DOEpatents

Wang, Tihu; Ciszek, Theodore F.

2004-03-30

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

NASA Astrophysics Data System (ADS)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Low cost silicon solar array project silicon materials task

NASA Technical Reports Server (NTRS)

1977-01-01

A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant will be injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon will be developed using standard engineering approaches, and the salt vapor will later be electrolytically separated into its elemental constituents for recycle. Preliminary technical evaluations and economic projections indicate not only that this process appears to be feasible, but that it also has the advantages of rapid, high capacity production of good quality molten silicon at a nominal cost.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Ceramic composites reinforced with modified silicon carbide whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1990-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tripodal penta(p-phenylene) for the biofunctionalization of alkynyl-modified silicon surfaces

NASA Astrophysics Data System (ADS)

Sánchez-Molina, María; Díaz, Amelia; Valpuesta, María; Contreras-Cáceres, Rafael; López-Romero, J. Manuel; López-Ramírez, M. Rosa

2018-07-01

Here we report the optimization on the covalent grafting methodology of a tripod-shaped penta(p-phenylene), 1, on alkynyl-terminated silicon surfaces, and the incorporation of an active theophylline derivative, 2, for the specific immobilization of proteins. The tripodal molecule presents azide-terminal groups to be attached onto a silicon surface containing an alkynyl monolayer. Initially, compound 1 has been covalently incorporated on alkynyl-terminated Si wafers, by the copper catalyzed alkyne-azide 1,3-dipolar cycloaddition (CuAAC, a click reaction). The tripod density on the silicon surface is tuned by performing the CuAAC reaction at different concentrations of 1, as well as under different experimental conditions (T, base, copper source, shaking). Then, tripod 1-modified surface has also been biofunctionalized with 2. The effective preparation of this silicon-modified surface allowed us to study the streptavidin immobilization on the surface. Characterization of the different surfaces has been carried out by X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM) and Bright-Field Optical Transmission Microscopy (Confocal) techniques. We also include density functional theory (DFT) analysis of the organic structures to confirm the height-profile and the tripod-surface relative configuration extracted from AFM images.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Anisotropic etching of silicon in solutions containing tensioactive compounds

NASA Astrophysics Data System (ADS)

Zubel, Irena

2016-12-01

The results of investigations concerning anisotropic etching in 3M KOH and 25% TMAH solutions modified by tensioactive compounds such as alcohols, diols and a typical surfactant Triton X100 have been compared. Etching anisotropy was assessed on the basis of etch rates ratio V(110)/V(100). It was stated that the relation between surface tension of the solutions and etch rates of particular planes depend not only on the kind of surfactant but also on the kind of etching solution (KOH, TMAH). It points out an important role of TMA+ ions in the etching process, probably in the process of forming an adsorption layer, consisting of the molecules of tensioactive compounds on Si surface, which decides about etch rate. We have observed that this phenomenon occurs only at high concentration of TMA+ ions (25% TMAH). Reduction of TMAH concentration changes the properties of surfactant containing TMAH solutions. From all investigated solutions, the solutions that assured developing of (110) plane inclined at the angle of 45° to (100) substrate were selected. Such planes can be used as micromirrors in MOEMS structures. The solutions provide the etch rate ratio V(110)/V(100)<0.7, thus they were selected from hydroxide solutions containing surfactants. A simple way for etch rate anisotropy V(110)/V(100) assessment based on microscopic images etched structures has been proposed.

Locking of electron spin coherence above 20 ms in natural silicon carbide

NASA Astrophysics Data System (ADS)

Simin, D.; Kraus, H.; Sperlich, A.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2017-04-01

We demonstrate that silicon carbide (SiC) with a natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over an unexpectedly long time exceeding 20 ms. The spin-locked subspace with a drastically reduced decoherence rate is attained through the suppression of heteronuclear spin crosstalking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. Furthermore, we identify several phonon-assisted mechanisms of spin-lattice relaxation and find that it can be extremely long at cryogenic temperatures, equal to or even longer than 10 s. Our approach may be extended to other polyatomic compounds and opens a path towards improved qubit memory for wafer-scale quantum technologies.

Direct Human Contact with Siloxanes (Silicones) – Safety or Risk Part 1. Characteristics of Siloxanes (Silicones)

PubMed Central

Mojsiewicz-Pieńkowska, Krystyna; Jamrógiewicz, Marzena; Szymkowska, Katarzyna; Krenczkowska, Dominika

2016-01-01

Siloxanes are commonly known as silicones. They belong to the organosilicon compounds and are exclusively obtained by synthesis. Their chemical structure determines a range of physicochemical properties which were recognized as unique. Due to the susceptibility to chemical modifications, ability to create short, long or complex polymer particles, siloxanes found an application in many areas of human life. Siloxanes differ in particle size, molecular weight, shape and chemical groups. As a result, this determines the different physico-chemical properties, that directly affect the safety or the risk of their use. The areas that can be a source of danger to human health will be commented in this paper. PMID:27303296

High-efficiency THz modulator based on phthalocyanine-compound organic films

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Ting; Zhang, Bo, E-mail: bzhang@cnu.edu.cn, E-mail: sjl-phy@cnu.edu.cn; Shen, Jingling, E-mail: bzhang@cnu.edu.cn, E-mail: sjl-phy@cnu.edu.cn

2015-02-02

We report a high efficiency, broadband terahertz (THz) modulator following a study of phthalocyanine-compound organic films irradiated with an external excitation laser. Both transmission and reflection modulations of each organic/silicon bilayers were measured using THz time-domain and continuous-wave systems. For very low intensities, the experimental results show that AlClPc/Si can achieve a high modulation factor for transmission and reflection, indicating that AlClPc/Si has a superior modulation efficiency compared with the other films (CuPc and SnCl{sub 2}Pc). In contrast, the strong attenuation of the transmitted and reflected THz waves revealed that a nonlinear absorption process takes place at the organic/silicon interface.

Origami silicon optoelectronics for hemispherical electronic eye systems.

PubMed

Zhang, Kan; Jung, Yei Hwan; Mikael, Solomon; Seo, Jung-Hun; Kim, Munho; Mi, Hongyi; Zhou, Han; Xia, Zhenyang; Zhou, Weidong; Gong, Shaoqin; Ma, Zhenqiang

2017-11-24

Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based sensors with high-spatial resolution into such format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations of polygons to fold into spherical formats. Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex hemisphere. These two electronic eye prototypes represent simple and low-cost methods as well as flexible optimization parameters in terms of pixel density and design. Results demonstrated in this work combined with miniature size and simplicity of the design establish practical technology for integration with conventional electronic devices.

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

NASA Technical Reports Server (NTRS)

Srivastava, R.; Gould, R. K.

1979-01-01

The program aims at developing mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon. The major interest is in collecting silicon as a liquid on the reactor walls and other collection surfaces. Two reactor systems are of major interest, a SiCl4/Na reactor in which Si(l) is collected on the flow tube reactor walls and a reactor in which Si(l) droplets formed by the SiCl4/Na reaction are collected by a jet impingement method. During this quarter the following tasks were accomplished: (1) particle deposition routines were added to the boundary layer code; and (2) Si droplet sizes in SiCl4/Na reactors at temperatures below the dew point of Si are being calculated.

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

NASA Technical Reports Server (NTRS)

Srivastava, R.; Gould, R. K.

1979-01-01

Mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon were developed. The following tasks were accomplished: (1) formulation of a model for silicon vapor separation/collection from the developing turbulent flow stream within reactors of the Westinghouse (2) modification of an available general parabolic code to achieve solutions to the governing partial differential equations (boundary layer type) which describe migration of the vapor to the reactor walls, (3) a parametric study using the boundary layer code to optimize the performance characteristics of the Westinghouse reactor, (4) calculations relating to the collection efficiency of the new AeroChem reactor, and (5) final testing of the modified LAPP code for use as a method of predicting Si(1) droplet sizes in these reactors.

Silicon entering through silicon utilizing organisms has biological effects in human beings

NASA Astrophysics Data System (ADS)

Shraddhamayananda, S.

2012-12-01

Except in the lungs, there is no evidence that silicon can do any harm in our body and Silicon is as essential as magnesium and calcium for us. It helps in proper activities of the bone tissues and all of the components in the human skeletal system. It can prevent osteoporosis in bones and also helps in lowering of blood pressure. Silicon can also inhibit fungal disease by physically inhibiting fungal germ tube penetration of the epidermis. Many of our foods which are associated with silicon utilizing organisms like rice, vegetables, wheat etc, contain plenty silicon, however, during processing most silicon get lost. In alternative medicine silicon is used to promote expulsion of foreign bodies from tissue, in formation of suppuration and finally expulsion of pus from abscesses. Silicon is also used to remove fibrotic lesions and scar tissue and in this way it can prevent formation of keloids. Sometimes it is also used to treat chronic otitis media, and chronic fistula,

Research and preparation of ultra purity silicon tetrachloride

NASA Astrophysics Data System (ADS)

Wan, Ye; Zhao, Xiong; Yan, Dazhou; Yang, Dian; Li, Yunhao; Guo, Shuhu

2017-10-01

This article demonstrated a technology for producing ultra-purity silicon tetrachloride, which using the high purity SiCl4 as raw material through the method of combination ray reaction with purification. This technology could remove metal impurities and compounds impurities contained hydrogen effectively. The purity of product prepared by this technology can reach at 99.9999%, content of metal impurities can be low at 0.3PPb, meeting the requirement of industry easily. This technology has the advantages of simple process, continuous operation, and stable performance.

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

Crystalline silicon growth in nickel/a-silicon bilayer

NASA Astrophysics Data System (ADS)

Mohiddon, Md Ahamad; Naidu, K. Lakshun; Dalba, G.; Rocca, F.; Krishna, M. Ghanashyam

2013-02-01

The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 °C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Improvements in pollutant monitoring: optimizing silicone for co-deployment with polyethylene passive sampling devices.

PubMed

O'Connell, Steven G; McCartney, Melissa A; Paulik, L Blair; Allan, Sarah E; Tidwell, Lane G; Wilson, Glenn; Anderson, Kim A

2014-10-01

Sequestering semi-polar compounds can be difficult with low-density polyethylene (LDPE), but those pollutants may be more efficiently absorbed using silicone. In this work, optimized methods for cleaning, infusing reference standards, and polymer extraction are reported along with field comparisons of several silicone materials for polycyclic aromatic hydrocarbons (PAHs) and pesticides. In a final field demonstration, the most optimal silicone material is coupled with LDPE in a large-scale study to examine PAHs in addition to oxygenated-PAHs (OPAHs) at a Superfund site. OPAHs exemplify a sensitive range of chemical properties to compare polymers (log Kow 0.2-5.3), and transformation products of commonly studied parent PAHs. On average, while polymer concentrations differed nearly 7-fold, water-calculated values were more similar (about 3.5-fold or less) for both PAHs (17) and OPAHs (7). Individual water concentrations of OPAHs differed dramatically between silicone and LDPE, highlighting the advantages of choosing appropriate polymers and optimized methods for pollutant monitoring. Copyright © 2014 Elsevier Ltd. All rights reserved.

Silicon micro-mold

DOEpatents

Morales, Alfredo M [Livermore, CA

2006-10-24

The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

PubMed

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

LiBSi2: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels.

PubMed

Zeilinger, Michael; van Wüllen, Leo; Benson, Daryn; Kranak, Verina F; Konar, Sumit; Fässler, Thomas F; Häussermann, Ulrich

2013-06-03

Silicon swallows up boron: The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi2 was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels (see picture). LiBSi2 is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts.

Mathematical model of silicon smelting process basing on pelletized charge from technogenic raw materials

NASA Astrophysics Data System (ADS)

Nemchinova, N. V.; Tyutrin, A. A.; Salov, V. M.

2018-03-01

The silicon production process in the electric arc reduction furnaces (EAF) is studied using pelletized charge as an additive to the standard on the basis of the generated mathematical model. The results obtained due to the model will contribute to the analysis of the charge components behavior during melting with the achievement of optimum final parameters of the silicon production process. The authors proposed using technogenic waste as a raw material for the silicon production in a pelletized form using liquid glass and aluminum production dust from the electrostatic precipitators as a binder. The method of mathematical modeling with the help of the ‘Selector’ software package was used as a basis for the theoretical study. A model was simulated with the imitation of four furnace temperature zones and a crystalline silicon phase (25 °C). The main advantage of the created model is the ability to analyze the behavior of all burden materials (including pelletized charge) in the carbothermic process. The behavior analysis is based on the thermodynamic probability data of the burden materials interactions in the carbothermic process. The model accounts for 17 elements entering the furnace with raw materials, electrodes and air. The silicon melt, obtained by the modeling, contained 91.73 % wt. of the target product. The simulation results showed that in the use of the proposed combined charge, the recovery of silicon reached 69.248 %, which is in good agreement with practical data. The results of the crystalline silicon chemical composition modeling are compared with the real silicon samples of chemical analysis data, which showed the results of convergence. The efficiency of the mathematical modeling methods in the studying of the carbothermal silicon obtaining process with complex interphase transformations and the formation of numerous intermediate compounds using a pelletized charge as an additive to the traditional one is shown.

Determination of Hydrophobic Contact Angle of Epoxy Resin Compound Silicon Rubber and Silica

NASA Astrophysics Data System (ADS)

Syakur, Abdul; Hermawan; Sutanto, Heri

2017-04-01

Epoxy resin is a thermosetting polymeric material which is very good for application of high voltage outdoor insulator in electrical power system. This material has several advantages, i.e. high dielectric strength, light weight, high mechanical strength, easy to blend with additive, and easy maintenance if compared to that of porcelain and glass outdoor insulators which are commonly used. However, this material also has several disadvantages, i.e. hydrophilic property, very sensitive to aging and easily degraded when there is a flow of contaminants on its surface. The research towards improving the performance of epoxy resin insulation materials were carried out to obtain epoxy resin insulating material with high water repellent properties and high surface tracking to aging. In this work, insulating material was made at room temperature vulcanization, with material composition: Diglycidyl Ether Bisphenol A (DGEBA), Metaphenylene Diamine (MPDA) as hardener with stoichiometric value of unity, and nanosilica mixed with Silicon Rubber (SiR) with 10% (RTV21), 20% (RTV22), 30% (RTV23), 40% (RTV24) and 50% (RTV25) variation. The usage of nanosilica and Silicon Rubber (SIR) as filler was expected to provide hydrophobic properties and was able to increase the value of surface tracking of materials. The performance of the insulator observed were contact angle of hydrophobic surface materials. Tests carried out using Inclined Plane Tracking procedure according to IEC 60-587: 1984 with Ammonium Chloride (NH4Cl) as contaminants flowed using peristaltic pumps. The results show that hydrophobic contact angle can be determined from each sample, and RTV25 has maximum contact angle among others.

Release of low molecular weight silicones and platinum from silicone breast implants.

PubMed

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2

NASA Astrophysics Data System (ADS)

Gavrilov, G. E.; Vakhtel, V. M.; Maysuzenko, D. A.; Tavtorkina, T. A.; Fetisov, A. A.; Shvetsova, N. Yu.

2017-12-01

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO2 and a 60%Ar + 30%CO2 + 10%CF4 working mixture was stimulated by a 90Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF4 + 20%CO2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO2 compounds was obtained.

The evaporation study of silicon-containing ionic liquid

NASA Astrophysics Data System (ADS)

Chilingarov, Norbert S.; Medvedev, Artem A.; Deyko, Grigoriy S.; Kustov, Leonid M.; Chernikova, Elena A.; Glukhov, Lev M.; Polyakova, Marina V.; Ioutsi, Vitaliy A.; Markov, Vitaliy Yu.; Sidorov, Lev N.

2016-07-01

1,2-Dimethyl-3-(1‧,1‧,3‧,3‧-tetramethyl-3‧-phenyldisiloxanyl)methylimidazolium bis(trifluoromethanesulfonyl)amide ([PhC5OSi2MMIm+][Tf2N-]) is the first silicon-containing ionic liquid which was characterized with the vaporization enthalpy, (138.5 ± 1.8) kJ mol-1, and saturated vapor pressure, ln(p/Pa) = -(16656 ± 219)/(T/K) + (30.69 ± 0.92). This compound is a unique ionic liquid giving ions, retaining both cationic and anionic portions, in the electron impact ionization (EI) mass spectrum.

Silicon-on-Insulator Pin Diodes.

DTIC Science & Technology

1987-12-01

Thin (0.5 Micron) Silicon-on-Oxidized Silicon Fig. 2.8 SEM Photographs of CVD Silicon Dioxide on Aluminum 28 After 1500 0 C Anneal in Oxygen...silicon nitride over the silicon dioxide encapsu- -9- lation layer and by depositing the silicon dioxide with a plasma CVD process which uses N20 as...relief via thermal expansion matching varies lin- -27- A B Figure 2.8: SEM Photographs of CVD Silicon Dioxide on Aluminum after 15000 C Anneal in Oxygen

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Evaluation of the Effect of Silicone Contamination on Various Bond Systems and the Feasibility of Removing the Contamination

NASA Technical Reports Server (NTRS)

Stanley, Stephanie D.

2008-01-01

Silicone is a contaminant that can cause catastrophic failure of a bond system depending on the materials and processes used to fabricate the bond system, Unfortunately, more and more materials are fabricated using silicone. The purpose of this testing was to evaluate which bond systems are sensitive to silicone contamination and whether or not a cleaning process could be utilized to remove the silicone to bring the bond system performance back to baseline. Due to the extensive nature of the testing attempts will be made to generalize the understanding within classes of substrates, bond systems, and surface preparation and cleaning methods. This study was done by contaminating various meta! (steel, inconel, and aluminum), phenolic (carbon cloth phenolic and glass cloth phenolic), and rubber (natural rubber, asbestos-silicone dioxide filled natural butyldiene rubber, silica-filled ethylene propylenediene monomer, and carbon-filled ethylene propylenediene monomer) substrates which were then bonded using various adhesives and coatings (epoxy-based adhesives, paints, ablative compounds, and Chemlok adhesives) to determine the effect silicone contamination has on a given bond system's performance. The test configurations depended on the bond system being evaluated. The study also evaluated the feasibility of removing the silicone contamination by cleaning the contaminated substrate prior to bonding. The cleaning processes also varied depending on bond system.

Recurrent laryngeal nerve regeneration through a silicone tube produces reinnervation without vocal fold mobility in rats.

PubMed

Kumai, Yoshihiko; Aoyama, Takashi; Nishimoto, Kohei; Sanuki, Tetsuji; Minoda, Ryosei; Yumoto, Eiji

2013-01-01

We established an animal model of recurrent laryngeal nerve reinnervation with persistent vocal fold immobility following recurrent laryngeal nerve injury. In 36 rats, the left recurrent laryngeal nerve was transected and the stumps were abutted in a silicone tube with a 1-mm interspace, facilitating regeneration. The mobility of the vocal folds was examined endoscopically 5, 10, and 15 weeks later. Electromyography of the thyroarytenoid muscle was performed. Reinnervation was assessed by means of a quantitative immunohistologic evaluation with anti-neurofilament antibody in the nerve both proximal and distal to the silicone tube. The atrophy of the thyroarytenoid muscle was assessed histologically. We observed that all animals had a fixed left vocal fold throughout the study. The average neurofilament expression in the nerve both distal and proximal to the silicone tube, the muscle area, and the amplitude of the compound muscle action potential recorded from the thyroarytenoid muscle on the treated side increased significantly (p < 0.05) over time, demonstrating regeneration through the silicone tube. Recurrent laryngeal nerve regeneration through a silicone tube produced reinnervation without vocal fold mobility in rats. The efficacy of new laryngeal reinnervation treatments can be assessed with this model.

Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanova, E. V., E-mail: Ivanova@mail.ioffe.ru; Sitnikova, A. A.; Aleksandrov, O. V.

2016-06-15

It is found for the first time that silicon nanoclusters are formed in the surface layer of thermal silicon dioxide under high-temperature annealing (T = 1150°C) in dried nitrogen. Analysis of the cathodoluminescence spectra shows that an imperfect surface layer appears upon such annealing of silicon dioxide, with silicon nanoclusters formed in this layer upon prolonged annealing. Transmission electron microscopy demonstrated that the silicon clusters are 3–5.5 nm in size and lie at a depth of about 10 nm from the surface. Silicon from the thermal film of silicon dioxide serves as the material from which the silicon nanoclusters aremore » formed. This method of silicon-nanocluster formation is suggested for the first time.« less

Diamond-silicon carbide composite

DOEpatents

Qian, Jiang; Zhao, Yusheng

2006-06-13

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m^1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Study on real-time images compounded using spatial light modulator

NASA Astrophysics Data System (ADS)

Xu, Jin; Chen, Zhebo; Ni, Xuxiang; Lu, Zukang

2007-01-01

Image compounded technology is often used on film and its facture. In common, image compounded use image processing arithmetic, get useful object, details, background or some other things from the images firstly, then compounding all these information into one image. When using this method, the film system needs a powerful processor, for the process function is very complex, we get the compounded image for a few time delay. In this paper, we introduce a new method of image real-time compounded, use this method, we can do image composite at the same time with movie shot. The whole system is made up of two camera-lens, spatial light modulator array and image sensor. In system, the spatial light modulator could be liquid crystal display (LCD), liquid crystal on silicon (LCoS), thin film transistor liquid crystal display (TFTLCD), Deformable Micro-mirror Device (DMD), and so on. Firstly, one camera-lens images the object on the spatial light modulator's panel, we call this camera-lens as first image lens. Secondly, we output an image to the panel of spatial light modulator. Then, the image of the object and image that output by spatial light modulator will be spatial compounded on the panel of spatial light modulator. Thirdly, the other camera-lens images the compounded image to the image sensor, and we call this camera-lens as second image lens. After these three steps, we will gain the compound images by image sensor. For the spatial light modulator could output the image continuously, then the image will be compounding continuously too, and the compounding procedure is completed in real-time. When using this method to compounding image, if we will put real object into invented background, we can output the invented background scene on the spatial light modulator, and the real object will be imaged by first image lens. Then, we get the compounded images by image sensor in real time. The same way, if we will put real background to an invented object, we can output the

Emergence of two lamellas during impact of compound droplets

NASA Astrophysics Data System (ADS)

Liu, Dongdong; Tran, Tuan

2018-05-01

A compound droplet consisting of water and silicone oil either spreads or splashes upon impacting a solid surface. We show that the transition from spreading to splashing of this type of compound droplet can be changed by varying the volumetric oil ratio in the droplets. In the spreading regime, we observe a surprising emergence of two lamellas spreading one after the other: the first spreading lamella consists of only oil and the trailing one water. We show that the two lamellas eventually meet, significantly affecting the spreading dynamics. Finally, we quantify the maximum spreading radius and show that it is a function of both the impact velocity and the volumetric oil ratio.

Henry`s law constant for selected volatile organic compounds in high-boiling oils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poddar, T.K.; Sirkar, K.K.

Absorption systems are often used to remove and recover organic vapors from process air/gas streams. A high boiling and inert liquid like silicone oil is an excellent absorbent for volatile organic compounds in air. Henry`s law constants of four different volatile organic compounds, namely, acetone, methanol, methylene chloride, and toluene between air and high-boiling oils were determined experimentally by the headspace-GC technique over a temperature range. The Henry`s law constants were fitted as a function of temperature to an equation.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Chemical and Sensory Evaluation of Silicone and Polylactic Acid-Based Remedial Treatments for Elevated Methoxypyrazine Levels in Wine.

PubMed

Botezatu, Andreea; Kemp, Belinda S; Pickering, Gary J

2016-09-16

Alkylmethoxypyrazines (MPs) are a class of compounds that can elicit undesirable aroma and flavor characteristics in wine, and resist remediation using traditional wine making approaches. MPs are grape-derived constituents as well as contaminants from Coccinellidae beetles present during wine processing; the latter eliciting an off-flavor referred to as 'ladybug taint'. In this study we investigated the capacity of two plastic polymers-one silicone-based, the other polylactic acid-based-applied with varying surface areas to reduce concentrations of isopropylmethoxypyrazine (IPMP), sec-butylmethoxypyrazine (SBMP) and isobutylmethoxypyrazine (IBMP) in a Merlot wine using multi-dimensional gas chromatography coupled with mass spectrometry and headspace solid phase microextraction (SPME-MDGCMS). The impact of treatments on the sensory characteristics of the wine (descriptive analysis) and volatile aroma compounds (VOCs) (SPME-MDGCMS) was also investigated. Results showed substantial reductions for all of the target odorants: up to 38%, 44% and 39% for IPMP, SBMP and IBMP, respectively, for the silicone polymer, and up to 75%, 78% and 77% for IPMP, SBMP and IBMP, respectively, for the polylactic acid polymer. These polymers had no or minimal effect on VOCs at applications of 200 cm²/L for silicone or for all polylactic acid treatments. Sensory impacts were less clear, but generally showed minimal effect from the treatments. Taken overall, the data confirm the utility of both polylactic acid and silicone polymers in reducing elevated levels of grape-derived MPs, as well as potentially improving wine contaminated by ladybug taint.

Dislocation-free strained silicon-on-silicon by in-place bonding

NASA Astrophysics Data System (ADS)

Cohen, G. M.; Mooney, P. M.; Paruchuri, V. K.; Hovel, H. J.

2005-06-01

In-place bonding is a technique where silicon-on-insulator (SOI) slabs are bonded by hydrophobic attraction to the underlying silicon substrate when the buried oxide is undercut in dilute HF. The bonding between the exposed surfaces of the SOI slab and the substrate propagates simultaneously with the buried oxide etching. As a result, the slabs maintain their registration and are referred to as "bonded in-place". We report the fabrication of dislocation-free strained silicon slabs from pseudomorphic trilayer Si/SiGe/SOI by in-place bonding. Removal of the buried oxide allows the compressively strained SiGe film to relax elastically and induce tensile strain in the top and bottom silicon films. The slabs remain bonded to the substrate by van der Waals forces when the wafer is dried. Subsequent annealing forms a covalent bond such that when the upper Si and the SiGe layer are removed, the bonded silicon slab remains strained.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results of a study for Task 3 of the Low Cost Solar Array Project, directed toward the development of a cost effective encapsulation system for photovoltaic modules using silicon based materials, are reported. Results of the following are discussed: (1) weather-ometer stressing vs. weathering history of silicon and silicon modified materials; (2) humidity/temperature cycling exposure; (3) exposure at high humidity/high temperature; (4) outdoor exposure stress; (5) thermal cycling stress; and (6) UV screening agents. The plans for the next quarter are outlined.

A silicon Brillouin laser

NASA Astrophysics Data System (ADS)

Otterstrom, Nils T.; Behunin, Ryan O.; Kittlaus, Eric A.; Wang, Zheng; Rakich, Peter T.

2018-06-01

Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Jalali, Bahram

2009-03-01

We propose a new class of photonic devices based on periodic stress fields in silicon that enable second-order nonlinearity as well as quasi-phase matching. Periodically poled silicon (PePSi) adds the periodic poling capability to silicon photonics and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on second-order nonlinear effects. As an example of the utility of the PePSi technology, we present simulations showing that midwave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50%.

A silicon micromachined resonant pressure sensor

NASA Astrophysics Data System (ADS)

Tang, Zhangyang; Fan, Shangchun; Cai, Chenguang

2009-09-01

This paper describes the design, fabrication and test of a silicon micromachined resonant pressure sensor. A square membrane and a doubly clamped resonant beam constitute a compound structure. The former senses the pressure directly, while the latter changes its resonant frequency according to deformation of the membrane. The final output relation between the resonant frequency and the applied pressure is deducted according to the structure mechanical properties. Sensors are fabricated by micromachining technology, and then sealed in vaccum. These sensors are tested by open-loop and close-loop system designed on purpose. The experiment results demonstrate that the sensor has a sensitivity of 49.8Hz/kPa and repeatability of 0.08%.

Evolution of Non-metallic Inclusions and Precipitates in Oriented Silicon Steel

NASA Astrophysics Data System (ADS)

Luo, Yan; Yang, Wen; Ren, Qiang; Hu, Zhiyuan; Li, Ming; Zhang, Lifeng

2018-06-01

The evolution of inclusions in oriented silicon steel during the manufacturing process was carried out by chemical composition analysis, non-aqueous electrolytic corrosion, and thermodynamic calculation. The morphology, composition, and size of inclusions were analyzed introducing field emission scanning electron microscope. The oxides were mainly formed during the secondary refining, and the nitrides, sulfides, and compounds were formed during the solidification and cooling of steel in the processes of continuous casting and hot rolling.

Micromachined silicon electrostatic chuck

DOEpatents

Anderson, R.A.; Seager, C.H.

1996-12-10

An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

Micromachined silicon electrostatic chuck

DOEpatents

Anderson, Robert A.; Seager, Carleton H.

1996-01-01

An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

Fabrication of semiconductor-polymer compound nonlinear photonic crystal slab with highly uniform infiltration based on nano-imprint lithography technique.

PubMed

Qin, Fei; Meng, Zi-Ming; Zhong, Xiao-Lan; Liu, Ye; Li, Zhi-Yuan

2012-06-04

We present a versatile technique based on nano-imprint lithography to fabricate high-quality semiconductor-polymer compound nonlinear photonic crystal (NPC) slabs. The approach allows one to infiltrate uniformly polystyrene materials that possess large Kerr nonlinearity and ultrafast nonlinear response into the cylindrical air holes with diameter of hundred nanometers that are perforated in silicon membranes. Both the structural characterization via the cross-sectional scanning electron microscopy images and the optical characterization via the transmission spectrum measurement undoubtedly show that the fabricated compound NPC samples have uniform and dense polymer infiltration and are of high quality in optical properties. The compound NPC samples exhibit sharp transmission band edges and nondegraded high quality factor of microcavities compared with those in the bare silicon PC. The versatile method can be expanded to make general semiconductor-polymer hybrid optical nanostructures, and thus it may pave the way for reliable and efficient fabrication of ultrafast and ultralow power all-optical tunable integrated photonic devices and circuits.

Electron-irradiation-induced crystallization at metallic amorphous/silicon oxide interfaces caused by electronic excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagase, Takeshi, E-mail: t-nagase@uhvem.osaka-u.ac.jp; Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871; Yamashita, Ryo

2016-04-28

Irradiation-induced crystallization of an amorphous phase was stimulated at a Pd-Si amorphous/silicon oxide (a(Pd-Si)/SiO{sub x}) interface at 298 K by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Under irradiation, a Pd-Si amorphous phase was initially formed at the crystalline face-centered cubic palladium/silicon oxide (Pd/SiO{sub x}) interface, followed by the formation of a Pd{sub 2}Si intermetallic compound through irradiation-induced crystallization. The irradiation-induced crystallization can be considered to be stimulated not by defect introduction through the electron knock-on effects and electron-beam heating, but by the electronic excitation mechanism. The observed irradiation-induced structural change at the a(Pd-Si)/SiO{sub x} and Pd/SiO{sub x}more » interfaces indicates multiple structural modifications at the metal/silicon oxide interfaces through electronic excitation induced by the electron-beam processes.« less

A Microsystem Based on Porous Silicon-Glass Anodic Bonding for Gas and Liquid Optical Sensing

PubMed Central

De Stefano, Luca; Malecki, Krzysztof; Della Corte, Francesco G.; Moretti, Luigi; Rea, Ilaria; Rotiroti, Lucia; Rendina, Ivo

2006-01-01

We have recently presented an integrated silicon-glass opto-chemical sensor for lab-on-chip applications, based on porous silicon and anodic bonding technologies. In this work, we have optically characterized the sensor response on exposure to vapors of several organic compounds by means of reflectivity measurements. The interaction between the porous silicon, which acts as transducer layer, and the organic vapors fluxed into the glass sealed microchamber, is preserved by the fabrication process, resulting in optical path increase, due to the capillary condensation of the vapors into the pores. Using the Bruggemann theory, we have calculated the filled pores volume for each substance. The sensor dynamic has been described by time-resolved measurements: due to the analysis chamber miniaturization, the response time is only of 2 s. All these results have been compared with data acquired on the same PSi structure before the anodic bonding process.

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

PubMed

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

Improved toughness of silicon carbide

NASA Technical Reports Server (NTRS)

Palm, J. A.

1976-01-01

Impact energy absorbing layers (EALs) comprised of partially densified silicon carbide were formed in situ on fully sinterable silicon carbide substrates. After final sintering, duplex silicon carbide structures resulted which were comprised of a fully sintered, high density silicon carbide substrate or core, overlayed with an EAL of partially sintered silicon carbide integrally bonded to its core member. Thermal cycling tests proved such structures to be moderately resistant to oxidation and highly resistant to thermal shock stresses. The strength of the developed structures in some cases exceeded but essentially it remained the same as the fully sintered silicon carbide without the EAL. Ballistic impact tests indicated that substantial improvements in the toughness of sintered silicon carbide were achieved by the use of the partially densified silicon carbide EALs.

Novel axially carborane-cage substituted silicon phthalocyanine photosensitizer; synthesis, characterization and photophysicochemical properties

NASA Astrophysics Data System (ADS)

Atmaca, Göknur Yaşa; Dizman, Cemil; Eren, Tarık; Erdoğmuş, Ali

2015-02-01

The novel axially dicarborane substituted silicon (IV) (SiPc-DC) phthalocyanine was synthesized by treating silicon phthalocyanine dichloride SiPc(Cl)2 (SiPc) with o-Carborane monool. The compound was characterized by mass spectrometry, UV-Vis, FT-IR, 1H and 11B Nuclear Magnetic Resonance Spectroscopy (NMR). Spectral, photophysical (fluorescence quantum yield) and photochemical (singlet oxygen (ΦΔ) and photodegradation quantum yield (Φd)) properties of the complex were reported in different solutions (Dimethyl sulfoxide (DMSO), Dimethylformamide (DMF) and Toluene). The results of spectral measurements showed that both SiPc and carborane cage can have potential to be used as sensitizers in photodynamic therapy (PDT) and boron neutron capture therapy (BNCT) by their singlet oxygen efficiencies (ΦΔ = 0.41, 0.39).

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George C. (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1982-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fluidized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1984-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Adsorption and desorption characteristics of gradient distributed Bragg reflector porous silicon layers.

PubMed

Um, Sungyong; Lee, Sung Gi; Woo, Hee-Gweon; Cho, Sungdong; Sohn, Honglae

2013-01-01

Adsorption and desorption characteristics of gradient distributed Bragg reflector (DBR) porous silicon (PSi) were investigated under the exposure of organic vapors. Gradient DBR PSi whose average pore size decreased as the lateral distance from the Pt electrode increased was generated by using an asymmetric etching configuration. The reflection resonances were measured as a function of lateral distance from a point closest to the plate Pt electrode to a position on the silicon surface. Two types of gradient DBR PSi (H- and HO-terminated gradient DBR PSi) were used in this study. The detection of volatile organic compounds (VOCs) using the gradient DBR PSi had been achieved. When the vapor of VOCs condensed in the nanopores, the gradient DBR PSi modified with hydrophobic and hydrophilic functionality exhibited different pore adsorption and desorption characteristics.

Accuracy and Precision of Silicon Based Impression Media for Quantitative Areal Texture Analysis

PubMed Central

Goodall, Robert H.; Darras, Laurent P.; Purnell, Mark A.

2015-01-01

Areal surface texture analysis is becoming widespread across a diverse range of applications, from engineering to ecology. In many studies silicon based impression media are used to replicate surfaces, and the fidelity of replication defines the quality of data collected. However, while different investigators have used different impression media, the fidelity of surface replication has not been subjected to quantitative analysis based on areal texture data. Here we present the results of an analysis of the accuracy and precision with which different silicon based impression media of varying composition and viscosity replicate rough and smooth surfaces. Both accuracy and precision vary greatly between different media. High viscosity media tested show very low accuracy and precision, and most other compounds showed either the same pattern, or low accuracy and high precision, or low precision and high accuracy. Of the media tested, mid viscosity President Jet Regular Body and low viscosity President Jet Light Body (Coltène Whaledent) are the only compounds to show high levels of accuracy and precision on both surface types. Our results show that data acquired from different impression media are not comparable, supporting calls for greater standardisation of methods in areal texture analysis. PMID:25991505

Silicone-containing composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohamed, Mustafa

A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selectedmore » from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.« less

Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

NASA Technical Reports Server (NTRS)

Vandersande, Jan W. (Inventor); Wood, Charles (Inventor); Draper, Susan L. (Inventor)

1989-01-01

The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

DTIC Science & Technology

2009-07-01

making III–V FETs has been different than for silicon FETs. Growth techniques such as molecular beam epitaxy (MBE) are used to create heterostructures in...lities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures...article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

NASA Technical Reports Server (NTRS)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Silicon halide-alkali metal flames as a source of solar grade silicon

NASA Technical Reports Server (NTRS)

Olsen, D. B.; Miller, W. J.

1979-01-01

The feasibility of using alkali metal-silicon halide diffusion flames to produce solar-grade silicon in large quantities and at low cost is demonstrated. Prior work shows that these flames are stable and that relatively high purity silicon can be produced using Na + SiCl4 flames. Silicon of similar purity is obtained from Na + SiF4 flames although yields are lower and product separation and collection are less thermochemically favored. Continuous separation of silicon from the byproduct alkali salt was demonstrated in a heated graphite reactor. The process was scaled up to reduce heat losses and to produce larger samples of silicon. Reagent delivery systems, scaled by a factor of 25, were built and operated at a production rate of 0.5 kg Si/h. Very rapid reactor heating rates are observed with wall temperatures reaching greater than 2000 K. Heat release parameters were measured using a cooled stainless steel reactor tube. A new reactor was designed.

Bond Sensitivity to Silicone Contamination

NASA Technical Reports Server (NTRS)

Caldwell, G. A.; Hudson, W. D.; Hudson, W. D.; Cash, Stephen F. (Technical Monitor)

2003-01-01

Currently during fabrication of the Space Shuttle booster rocket motors, the use of silicone and silicone-containing products is prohibited in most applications. Many shop aids and other materials containing silicone have the potential, if they make contact with a bond surface, to transfer some of the silicone to the substrates being bonded. Such transfer could result in a reduction of the bond strength or even failure of the subsequent bonds. This concern is driving the need to understand the effect of silicones and the concentration needed to affect a given bond-line strength. Additionally, as silicone detection methods used for materials acceptance improve what may have gone unnoticed earlier is now being detected. Thus, realistic silicone limits for process materials (below which bond performance is satisfactory) are needed rather than having an absolute no silicone permitted policy.

Form of silicon and method of making the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strobel, Timothy A.; Kim, Duck Young; Kurakevych, Oleksandr O.

The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. N.sub.a4Si.sub.24 may be used as a precursor to make Si.sub.24.

Silicone-specific blood lymphocyte response in women with silicone breast implants.

PubMed Central

Ojo-Amaize, E A; Conte, V; Lin, H C; Brucker, R F; Agopian, M S; Peter, J B

1994-01-01

A blinded cross-sectional study was carried out with 99 women, 44 of whom had silicone breast implants. Group I consisted of 55 healthy volunteer women without breast implants; group II comprised 13 volunteer women with breast implants or explants who felt healthy; group III comprised 21 volunteer women with breast implants who had chronic fatigue, musculoskeletal symptoms, and skin disorders; and group IV comprised 10 women who had their prostheses explanted but still presented with clinical symptoms similar to those of the women in group III. Proliferative responses of peripheral blood mononuclear cells from all 99 women were measured by [3H]thymidine uptake after exposure to SiO2 silicon, or silicone gel. The levels of proliferative responses were expressed as stimulation indices, which were obtained by dividing the counts per minute of stimulated cells by the counts per minute of unstimulated cells. Abnormal responses to SiO2, silicon, or silicone gel were defined as a stimulation index of > 2.8, > 2.1, or > 2.4, respectively. Abnormal responses were observed in 0% of group I, 15% of group II, 29% of group III, and 30% of group IV (P < 0.0005 for group I versus groups II and IV). Thirty-one percent of symptomatic women with silicone gel breast implants had elevated serum silicon levels ( > 0.18 mg/liter); however, there was no significant correlation between abnormal cellular responses and silicon levels in blood serum, type of implant, time since first implantation, prosthesis explantation, number of implants, or report of implant leakage or rupture.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:8556522

Low temperature solution synthesis of silicon, germanium and Si-Ge axial heterostructures in nanorod and nanowire form.

PubMed

Flynn, G; Stokes, K; Ryan, K M

2018-05-31

Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.

Evaluation of the Effect of Silicone Contamination on Various Bond Systems and the Feasibility of Removing the Contamination

NASA Technical Reports Server (NTRS)

Stanley, Stephanie D.

2008-01-01

Silicone is a contaminant that can cause catastrophic failure of a bond system depending on the materials and processes used to fabricate the bond system. Unfortunately, more and more materials are fabricated using silicone. The purpose of this testing was to evaluate which bond systems are sensitive to silicone contamination and whether or not a cleaning process could be utilized to remove the silicone to bring the bond system performance back to baseline. Due to the extensive nature of the testing, attempts will be made to generalize the understanding within classes of substrates, bond systems, and surface preparation and cleaning methods. This study was done by contaminating various metal (steel, Inconel, and aluminum), phenolic (carbon-cloth phenolic [CCP] and glass-cloth phenolic [GCP]), and rubber (natural rubber, asbestos-silicone dioxide filled natural butyldiene rubber [ASNBR]; silica-filled ethylene propylenediene monomer [SFEPDM], and carbon-filled ethylene propylenediene monomer [CFEPDM]) substrates which were then bonded using various adhesives and coatings (epoxy-based adhesives, paints, ablative compounds, and Chemlok adhesives) to determine the effect silicone contamination has on a given bond system's performance. The test configurations depended on the bond system being evaluated. The study also evaluated the feasibility of removing the silicone contamination by cleaning the contaminated substrate prior to bonding. The cleaning processes also varied depending on bond system.

Stability and rheology of dispersions of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1987-01-01

The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

Development of a silicone-membrane passive sampler for monitoring cylindrospermopsin and microcystin LR-YR-RR in natural waters

NASA Astrophysics Data System (ADS)

Nyoni, Hlengilizwe; Mamba, Bhekie B.; Msagati, Titus A. M.

2017-08-01

Silicone membrane tubes were functionalised by filling them with synthesised γ-Fe2O3 nanoparticles and used as a passive sampling device for monitoring microcystins and cylindrospermopsin in aquatic environments. This novel device was calibrated for the measurement of microcystin and cylindrospermopsin concentrations in water. The effect of temperature and hydrodynamics on the sampler performance was studied in a flow-through system under controlled conditions. The chemical uptake of microcystins (MCs) and cylindrospermopsin (CYN) into the passive sampler remained linear and integrative throughout the exposure period. The rate of accumulation of most of the MC compounds tested was dependent on temperature and flow velocity. The use of 13C labelled polychlorinated biphenyls as performance reference compounds (PRCs) in silicone membrane/γ-Fe2O3 nanoparticle passive sampler, Chemcatcher and polar organic chemical integrative sampler (POCIS) was evaluated. The majority of PRCs improved the semi quantitative nature of water concentration estimated by the three samplers. The corrected sampling rate values of model biotoxin compounds were used to estimate the time-weighted average concentrations in natural cyanobacterial water blooms of the Hartbeespoort dam. The corrected sampling rates RScorr values varied from 0.1140 to 0.5628 Ld-1 between samplers with silicone membrane having the least RScorr values compared to the Chemcatcher and POCIS. The three passive sampling devises provided a more relevant picture of the biotoxin concentration in the Hartbeespoort dam. The results suggested that the three sampling devices are suitable for use in monitoring microcystins and cylindrospermopsin concentrations in aquatic environments.

Fluoroethylene Carbonate as a Directing Agent in Amorphous Silicon Anodes: Electrolyte Interface Structure Probed by Sum Frequency Vibrational Spectroscopy and Ab Initio Molecular Dynamics.

PubMed

Horowitz, Yonatan; Han, Hui-Ling; Soto, Fernando A; Ralston, Walter T; Balbuena, Perla B; Somorjai, Gabor A

2018-02-14

Fluorinated compounds are added to carbonate-based electrolyte solutions in an effort to create a stable solid electrolyte interphase (SEI). The SEI mitigates detrimental electrolyte redox reactions taking place on the anode's surface upon applying a potential in order to charge (discharge) the lithium (Li) ion battery. The need for a stable SEI is dire when the anode material is silicon as silicon cracks due to its expansion and contraction upon lithiation and delithiation (charge-discharge) cycles, consequently limiting the cyclability of a silicon-based battery. Here we show the molecular structures for ethylene carbonate (EC): fluoroethylene carbonate (FEC) solutions on silicon surfaces by sum frequency generation (SFG) vibrational spectroscopy, which yields vibrational spectra of molecules at interfaces and by ab initio molecular dynamics (AIMD) simulations at open circuit potential. Our AIMD simulations and SFG spectra indicate that both EC and FEC adsorb to the amorphous silicon (a-Si) through their carbonyl group (C═O) oxygen atom with no further desorption. We show that FEC additives induce the reorientation of EC molecules to create an ordered, up-right orientation of the electrolytes on the Si surface. We suggest that this might be helpful for Li diffusion under applied potential. Furthermore, FEC becomes the dominant species at the a-Si surface as the FEC concentration increases above 20 wt %. Our finding at open circuit potential can now initiate additive design to not only act as a sacrificial compound but also to produce a better suited SEI for the use of silicon anodes in the Li-ion vehicular industry.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

NASA Technical Reports Server (NTRS)

Ciszek, T. F.; Schwuttke, G. H. (Inventor)

1979-01-01

A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density

PubMed Central

Son, In Hyuk; Hwan Park, Jong; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H.; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-man; Doo, Seok-Gwang; Chang, Hyuk

2015-01-01

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology. PMID:26109057

Porous Silicon Nanowires

PubMed Central

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Stir bar sorptive extraction with EG-Silicone coating for bisphenols determination in personal care products by GC-MS.

PubMed

Cacho, Juan Ignacio; Campillo, Natalia; Viñas, Pilar; Hernández-Córdoba, Manuel

2013-05-05

An easy to perform analytical method for the determination of three bisphenol compounds (BPs) in commonly used personal care products (PCPs) is presented. Ethylene glycol-silicone (EG-Silicone) coated stir bars, which have recently become commercially available, are evaluated in this study for the simultaneous determination of bisphenol A (BPA), bisphenol F (BPF) and bisphenol Z (BPZ) by stir bar sorptive extraction (SBSE) in combination with thermal desorption-gas chromatography-mass spectrometry (TD-GC-MS). This new sorptive extraction phase allows the analysis of these compounds without any previous derivatization procedure. Different parameters affecting both SBSE extraction and thermal desorption were carefully optimized, using experimental designs based on the Taguchi orthogonal arrays. The procedure was applied to analyzing easily bought PCPs, providing detection limits of about 8 ng g(-1), with precisions lower than 11% in terms of relative standard deviation. Recovery studies performed at two different concentration levels provided satisfactory values for all the compounds. The analyzed personal care samples contained BPA at concentration levels ranging from 30.9 to 88.3 ng g(-1). Copyright © 2013 Elsevier B.V. All rights reserved.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Silicone Migration From Baked-on Silicone Layers. Particle Characterization in Placebo and Protein Solutions.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2016-12-01

A significant number of therapeutic proteins are marketed as pre-filled syringes or other drug/device combination products and have been safely used in these formats for years. Silicone oil, which is used as lubricant, can migrate into the drug product and may interact with therapeutic proteins. In this study, particles in the size range of 0.2-5 μm and ≥1 μm as determined by resonant mass measurement and micro-flow imaging/light obscuration, respectively, resulted from silicone sloughing off the container barrel after agitation. The degree of droplet formation correlated well with the applied baked-on silicone levels of 13 μg and 94 μg per cartridge. Silicone migration was comparable in placebo, 2 mg/mL and 33 mg/mL IgG1 formulations containing 0.04% (w/v) polysorbate 20. Headspace substantially increased the formation of silicone droplets during agitation. The highest particle concentrations reached, however, were still very low compared to numbers described for spray-on siliconized containers. When applying adequate baked-on silicone levels below 100 μg, bake-on siliconization efficiently limits silicone migration into the drug product without compromising device functionality. Copyright © 2016 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Through-silicon via-induced strain distribution in silicon interposer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vianne, B., E-mail: benjamin.vianne@st.com; STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles; Richard, M.-I.

2015-04-06

Strain in silicon induced by Through-Silicon Via (TSV) integration is of particular interest in the frame of the integration of active devices in silicon interposer. Nano-focused X-ray beam diffraction experiments were conducted using synchrotron radiation to investigate the thermally induced strain field in silicon around copper filled TSVs. Measurements were performed on thinned samples at room temperature and during in situ annealing at 400 °C. In order to correlate the 2D strain maps with finite elements analysis, an analytical model was developed, which takes into account beam absorption in the sample for a given diffraction geometry. The strain field along themore » [335] direction is found to be in the 10{sup −5} range at room temperature and around 10{sup −4} at 400 °C. Simulations support the expected plastification in some regions of the TSV during the annealing step.« less

Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Whitehead, A. B.; Zook, J. D.; Grung, B. L.; Heaps, J. D.; Schmit, F.; Schuldt, S. B.; Chapman, P. W.

1981-01-01

The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

Theoretical considerations for Reaction-Formed Silicon Carbide (RFSC) formation by molten silicon infiltration into slurry-derived preforms

NASA Technical Reports Server (NTRS)

Behrendt, D. R.; Singh, M.

1993-01-01

For reaction-formed silicon carbide (RFSC) ceramics produced by silicon melt infiltration of porous carbon preforms, equations are developed to relate the amount of residual silicon to the initial carbon density. Also, for a slurry derived preform containing both carbon and silicon powder, equations are derived which relate the amount of residual silicon in the RFSC to the relative density of the carbon in the preform and to the amount of silicon powder added to the slurry. For a porous carbon preform that does not have enough porosity to prevent choking-off of the silicon infiltration, these results show that complete silicon infiltration can occur by adding silicon powder to the slurry mixture used to produce these preforms.

Silicon oxidation in fluoride solutions

NASA Technical Reports Server (NTRS)

Sancier, K. M.; Kapur, V.

1980-01-01

Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

Process for producing silicon

DOEpatents

Olson, J.M.; Carleton, K.L.

1982-06-10

A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

Process for producing silicon

DOEpatents

Olson, Jerry M.; Carleton, Karen L.

1984-01-01

A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

NASA Astrophysics Data System (ADS)

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-09-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

PubMed Central

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-01-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage. PMID:27659796

Silicon-graphene photonic devices

NASA Astrophysics Data System (ADS)

Yin, Yanlong; Li, Jiang; Xu, Yang; Tsang, Hon Ki; Dai, Daoxin

2018-06-01

Silicon photonics has attracted much attention because of the advantages of CMOS (complementary-metal-oxide-semiconductor) compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been regarded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning. Project supported by the National Major Research and Development Program (No. 2016YFB0402502), the National Natural Science Foundation of China (Nos. 11374263, 61422510, 61431166001, 61474099, 61674127), and the National Key Research and Development Program (No. 2016YFA0200200).

Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

1977-01-01

The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

Electrodeposition of molten silicon

DOEpatents

De Mattei, Robert C.; Elwell, Dennis; Feigelson, Robert S.

1981-01-01

Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

NASA Astrophysics Data System (ADS)

Cunning, Benjamin V.; Ahmed, Mohsin; Mishra, Neeraj; Ranjbar Kermany, Atieh; Wood, Barry; Iacopi, Francesca

2014-08-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

Process for purification of silicon

NASA Technical Reports Server (NTRS)

Rath, H. J.; Sirtl, E.; Pfeiffer, W.

1981-01-01

The purification of metallurgically pure silicon having a silicon content of more than 95% by weight is accomplished by leaching with an acidic solution which substantially does not attack silicon. A mechanical treatment leading to continuous particle size reduction of the granulated silicon to be purified is combined with the chemical purification step.

Cleanroom Garment Silicone Contamination

NASA Technical Reports Server (NTRS)

Geer, Wayne; Lepage, Colette

2006-01-01

The slide presentation reviews actions taken at Goddard Space Flight Center (GSFC) to eliminate contamination by silicone in clean rooms. Background information includes facilities and hardware affected by silicon contamination, a discussion of the negative aspects of silicone contamination, clean room garments, and how the problem was identified at GSFC. Actions taken by the GSFC Contamination Engineering Group and lessons learned are detailed. Results include: awareness of the silicone issue in laundry, increase in infrastructure and support of the testing lab, establishment of protocols for garment verification, closer relationship established with laundry and converter, specifications for laundry services and garments were strengthened, all consumables are tested before use in clean rooms, and established procedures were used to identify and treat silicone found on face masks.

Improved toughness of silicon carbide

NASA Technical Reports Server (NTRS)

Palm, J. A.

1975-01-01

Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antoniadis, H.

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink highmore » efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.« less

Electrochemical Synthesis of Binary and Ternary Refractory Compounds in the System Ti-Si-B from Chloride-Fluoride Melts

NASA Astrophysics Data System (ADS)

Devyatkin, Sergei V.

2007-09-01

Electrochemical synthesis of binary and ternary compounds in the system Ti-Si-B from chloridefluoride melts has been investigated by voltammetry and electrolysis. Electrochemical syntheses of titanium diboride, four titanium silicides (TiSi2, TiSi, Ti5Si4, Ti5Si3), silicon tetraboride and a new ternary compound, Ti5Si3B3, have been found to be one-step processes. The stoichiometry of the deposited compounds has been found to correlate with the bulk concentration of Ti, Si and B ions in the melt.

[Study of purity tests for silicone resins].

PubMed

Sato, Kyoko; Otsuki, Noriko; Ohori, Akio; Chinda, Mitsuru; Furusho, Noriko; Osako, Tsutomu; Akiyama, Hiroshi; Kawamura, Yoko

2012-01-01

In the 8th edition of Japan's Specifications and Standards for Food Additives, the purity test for silicone resins requires the determination of the refractive index and kinetic viscosity of the extracted silicone oil, and allows for only a limited amount of silicon dioxide. In the purity test, carbon tetrachloride is used to separate the silicone oil and silicon dioxide. To exclude carbon tetrachloride, methods were developed for separating the silicone oil and silicon dioxide from silicone resin, which use hexane and 10% n-dodecylbenzenesulfonic acid in hexane. For silicone oil, the measured refractive index and kinetic viscosity of the silicone oil obtained from the hexane extract were shown to be equivalent to those of the intact silicone oil. In regard to silicon dioxide, it was confirmed that, following the separation with 10% n-dodecylbenzenesulfonic acid in hexane, the level of silicon dioxide in silicone resin can be accurately determined. Therefore, in this study, we developed a method for testing the purity of silicone resins without the use of carbon tetrachloride, which is a harmful reagent.

Assessment of silicone as support to investigate the transformation routes of organic chemicals under environmental conditions and UV exposure. Application to selected fungicides.

PubMed

Rodríguez-Cabo, T; Rodríguez, I; Ramil, M; Cela, R

2013-05-01

The suitability of bulk silicone as support to follow the degradation of chemical compounds under environmental conditions and UV radiation is illustrated selecting three fungicides (fenhexamid, FEN; triadimenol, TRI and difenoconazole, DIF) as model compounds. These precursor species were first absorbed in silicone supports (10 mm length × 2 mm i.d. and 0.5 mm thickness) and then kept outdoors for several days (up to 2 months) or exposed to UV radiation (254 nm), from a low pressure mercury lamp, in the laboratory. Degradation of precursor fungicides and by-products formation was followed by liquid chromatography (LC) quadrupole time-of-flight (QTOF) mass spectrometry (MS), after desorption of silicone supports using 0.5 mL of acetonitrile. Half-lives (t(1/2)) measured under UV exposure varied from 5 to 100 min. As regards environmental conditions, the most stable fungicide was DIF, degraded by just 15 % after 2 months; whereas, t(1/2) values of 30 and 83 h were calculated for FEN during summer and autumn, respectively. Supports contained by-products arising from precursor species through de-chlorination, cleavage, hydroxylation, intra-molecular cyclation and oligomerization reactions. Most of them have been previously identified in soil surface, vegetable leaves and water after application of fungicides in agriculture fields. The low cost of silicone tubes (ca. 0.4 Euros), added to their excellent chemical stability and capability to retain precursor species and their by-products, make them ideal supports to follow the transformation routes of organic compounds under environmental and simulated conditions, even for relatively stable species with t(1/2) in the range of weeks or months.

III-V compound semiconductor growth on silicon via germanium buffer and surface passivation for CMOS technology

NASA Astrophysics Data System (ADS)

Choi, Donghun

Integration of III-V compound semiconductors on silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, it is well known that there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%), and (ii) the formation of antiphase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge-on-Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor deposition (CVD). We then grew III-V materials on the Ge/Si virtual substrates using molecular-beam epitaxy (MBE). The relationship between initial Ge surface configuration and antiphase boundary formation was investigated using surface reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) image analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve the Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition (ALD) system after HCl native oxide etching and ALD in-situ pre

Silicon web process development

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

1981-01-01

The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

Chemical Reactions and Properties of Organosilicon Compounds Related to New Materials.

DTIC Science & Technology

1985-10-31

out. The compound behaves like an olefin in some reactions, for in- stance addition of hydrogen halides or chlorine: C1 2 HCI Mes 2 SiCl-SiClMes2...polymers have been synthesized which contain some silicon atoms bonded to hydrogen . These become crosslinked when mixed with substances containing several...and highly efficient catalysts, very small amounts are required in this process. Moreover, photocatalysis using polysilanes produces polymers with

Analysis of Silicones Released from Household Items and Baby Articles by Direct Analysis in Real Time-Mass Spectrometry

NASA Astrophysics Data System (ADS)

Gross, Jürgen H.

2015-03-01

Direct analysis in real time-mass spectrometry (DART-MS) enables screening of articles of daily use made of polydimethylsiloxanes (PDMS), commonly known as silicone rubber, to assess their tendency to release low molecular weight silicone oligomers. DART-MS analyses were performed on a Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometer. Flexible silicone baking molds, a watch band, and a dough scraper, as baby articles different brands of pacifiers, nipples, and a teething ring have been examined. While somewhat arbitrarily chosen, the set can be regarded as representative of household items, baby articles, and other objects made of silicone rubber. For comparison, two brands of silicone septa and as blanks a glass slide and a latex pacifier were included. Differences between the objects were mainly observed in terms of molecular weight distribution and occasional release of other compounds in addition to PDMS. Other than that, all objects made of silicone rubber released significant amounts of PDMS during DART analysis. To provide a coarse quantification, a calibration based on silicone oil was established, which delivered PDMS losses from 20 μg to >100 μg during the 16-s period per measurement. Also, the extraction of baking molds in rapeseed oil demonstrated a PDMS release at the level of 1 μg mg-1. These findings indicate a potential health hazard from frequent or long-term use of such items. This work does not intend to blame certain brands of such articles. Nonetheless, a higher level of awareness of this source of daily silicone intake is suggested.

Analysis of silicones released from household items and baby articles by direct analysis in real time-mass spectrometry.

PubMed

Gross, Jürgen H

2015-03-01

Direct analysis in real time-mass spectrometry (DART-MS) enables screening of articles of daily use made of polydimethylsiloxanes (PDMS), commonly known as silicone rubber, to assess their tendency to release low molecular weight silicone oligomers. DART-MS analyses were performed on a Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometer. Flexible silicone baking molds, a watch band, and a dough scraper, as baby articles different brands of pacifiers, nipples, and a teething ring have been examined. While somewhat arbitrarily chosen, the set can be regarded as representative of household items, baby articles, and other objects made of silicone rubber. For comparison, two brands of silicone septa and as blanks a glass slide and a latex pacifier were included. Differences between the objects were mainly observed in terms of molecular weight distribution and occasional release of other compounds in addition to PDMS. Other than that, all objects made of silicone rubber released significant amounts of PDMS during DART analysis. To provide a coarse quantification, a calibration based on silicone oil was established, which delivered PDMS losses from 20 μg to >100 μg during the 16-s period per measurement. Also, the extraction of baking molds in rapeseed oil demonstrated a PDMS release at the level of 1 μg mg(-1). These findings indicate a potential health hazard from frequent or long-term use of such items. This work does not intend to blame certain brands of such articles. Nonetheless, a higher level of awareness of this source of daily silicone intake is suggested.

Method for one-to-one polishing of silicon nitride and silicon oxide

NASA Technical Reports Server (NTRS)

Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

2009-01-01

The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

Silicon influence on resistance induction against Bemisia tabaci biotype B (Genn.) (Hemiptera: Aleyrodidae) and on vegetative development in two soybean cultivars.

PubMed

Ferreira, R S; Moraes, J C; Antunes, C S

2011-01-01

The potential of populations of Bemisia tabaci (Genn.) to become resistant to insecticides has stimulated research into alternative tactics of integrated pest management such as the induction of host-plant resistance. Recent data have shown that silicon can increase the degree of resistance of host plants to insect pests. Therefore the aim of our work was to study the effects of silicon application on the vegetative development of soybean plants and on the induction of resistance to the silverleaf whitefly, B. tabaci biotype B. We performed choice and no-choice tests of oviposition preference on two soybean cultivars, IAC-19 (moderately resistant to B. tabaci biotype B) and MONSOY-8001 (susceptible), with and without application of silicon. Silicon did not affect silverleaf whitefly oviposition preferences, but caused significant mortality in nymphs. Thus, silicon increased the degree of resistance to silverleaf whitefly. Silicon decreased the production of phenolic compounds, but did not affect lignin production. However, when applied to cultivar IAC-19, it increased the production of non-protein organic nitrogen. Silicon had no effect on the vegetative development of soybean plants, but it increased the degree of resistance to the silverleaf whitefly. We conclude that silicon applications combined with cultivar IAC-19 can significantly decrease silverleaf whitefly populations, having a positive impact both on the soybean plant and on the environment.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Jones (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Workshop summary: New silicon cells

NASA Technical Reports Server (NTRS)

Meulenberg, A.; Iles, P. A.

1993-01-01

The workshop on new silicon cells held during SPRAT12 is summarized. A smaller than average group attended this workshop reflecting the reduction in research dollars available to this portion of the photovoltaics community. Despite the maturity of the silicon technology, a core of the group maintained an excitement about new developments and potential opportunities. The group addressed both the implications and the applications of recent developments. Topics discussed include: light trapping and ultrathin silicon cells; different uses for silicon cells; new silicon cell developments; and radiation tolerant high efficiency cells.

Immobilization of kojic acid in ZnAl-hydrotalcite like compounds

NASA Astrophysics Data System (ADS)

Ambrogi, Valeria; Perioli, Luana; Nocchetti, Morena; Latterini, Loredana; Pagano, Cinzia; Massetti, Elena; Rossi, Carlo

2012-01-01

Kojic acid (KOJ) is a melanin synthesis inhibitor widely used as skin lightening agent in topical preparations. Unfortunately it is easily susceptible to photo-oxidation, phenomenon responsible for chemical and organoleptic modifications. The aim of this work was the intercalation of KOJ in hydrotalcite-like compounds (HTlc) in order to stabilize KOJ and to reduce its photolability. Hydrotalcite containing Zn and Al (ZnAl-HTlc) was used as host to obtain the final compound ZnAl-HTlc-KOJ. The intercalation was carried out, after many attempts, by ionic exchange mechanism by means of the strong base EtO- in anhydrous ethanol/dimethylsulfoxide (DMSO) mixture as solvent in order to generate KOJ- anions. The final product was characterized by the X-ray powder diffraction (XRPD), FT-IR spectroscopy, thermogravimetric analysis (TGA), differential scanning calorimetry (DSC) and elemental analysis. The intercalated compound was formulated in a siliconic water free self-emulsifying ointment and the in vitro release profile was evaluated. All samples (intercalation compound and its formulation) were submitted also to spectrophotometric assays in order to evaluate the matrix protective effect towards ultraviolet rays.

EPITAXIAL GROWTH OF SILICON

DTIC Science & Technology

Epitaxial growth of silicon on a silicon substrate by hydrogen reduction of SiCl4 was investigated. The chemical and physical processes involved in...silicon layers were produced at temperatures between 1100 and 1300 C. The effects of the concentration of SiCl4 in H2, the flow rate of the gas, the

Microstructure of SiC-Si-Al2O3 composites derived from silicone resin - metal aluminum filler compounds by low temperature reduction process

NASA Astrophysics Data System (ADS)

Narisawa, M.; Abe, Y.

2011-06-01

Concentrated slurry of a silicone resin with low carbon content, 3 μm aluminum particles and ethanol were prepared. After casting, addition of cross-linking agent and drying, silicone resin-aluminum composite with thick sheet form was obtained. The prepared sheet was heat-treated at 933 or 1073K with various holding times to characterize formed phases during the heat treatments. XRD patterns and FT-IR spectra revealed free Si formation and existence of Si-O-Si bond at 933K. The Si-O-Si bond, however, disappeared and silicon carbide was formed at 1073K. SEM observation indicated formation of cracks bridged with a number of tiny struts at 933K and conversion to wholly porous structure at 1073K.

A novel preparation method for silicone oil nanoemulsions and its application for coating hair with silicone

PubMed Central

Hu, Zhenhua; Liao, Meiling; Chen, Yinghui; Cai, Yunpeng; Meng, Lele; Liu, Yajun; Lv, Nan; Liu, Zhenguo; Yuan, Weien

2012-01-01

Background Silicone oil, as a major component in conditioner, is beneficial in the moisture preservation and lubrication of hair. However, it is difficult for silicone oil to directly absorb on the hair surface because of its hydrophobicity. Stable nanoemulsions containing silicone oil may present as a potential solution to this problem. Methods Silicone oil nanoemulsions were prepared using the oil-in-water method with nonionic surfactants. Emulsion particle size and distribution were characterized by scanning electron microscopy. The kinetic stability of this nanoemulsion system was investigated under accelerated stability tests and long-term storage. The effect of silicone oil deposition on hair was examined by analyzing the element of hair after treatment of silicone oil nanoemulsions. Results Nonionic surfactants such as Span 80 and Tween 80 are suitable emulsifiers to prepare oil-in-water nanoemulsions that are both thermodynamically stable and can enhance the absorption of silicone oil on hair surface. Conclusion The silicone oil-in-water nanoemulsions containing nonionic surfactants present as a promising solution to improve the silicone oil deposition on the hair surface for hair care applications. PMID:23166436

Atomic Oxygen Interactions With Silicone Contamination on Spacecraft in Low Earth Orbit Studied

NASA Technical Reports Server (NTRS)

Banks, Bruce A.

2001-01-01

Silicones have been widely used on spacecraft as potting compounds, adhesives, seals, gaskets, hydrophobic surfaces, and atomic oxygen protective coatings. Contamination of optical and thermal control surfaces on spacecraft in low Earth orbit (LEO) has been an ever-present problem as a result of the interaction of atomic oxygen with volatile species from silicones and hydrocarbons onboard spacecraft. These interactions can deposit a contaminant that is a risk to spacecraft performance because it can form an optically absorbing film on the surfaces of Sun sensors, star trackers, or optical components or can increase the solar absorptance of thermal control surfaces. The transmittance, absorptance, and reflectance of such contaminant films seem to vary widely from very transparent SiOx films to much more absorbing SiOx-based films that contain hydrocarbons. At the NASA Glenn Research Center, silicone contamination that was oxidized by atomic oxygen has been examined from LEO spacecraft (including the Long Duration Exposure Facility and the Mir space station solar arrays) and from ground laboratory LEO simulations. The findings resulted in the development of predictive models that may help explain the underlying issues and effects. Atomic oxygen interactions with silicone volatiles and mixtures of silicone and hydrocarbon volatiles produce glassy SiOx-based contaminant coatings. The addition of hydrocarbon volatiles in the presence of silicone volatiles appears to cause much more absorbing (and consequently less transmitting) contaminant films than when no hydrocarbon volatiles are present. On the basis of the LDEF and Mir results, conditions of high atomic oxygen flux relative to low contaminant flux appear to result in more transparent contaminant films than do conditions of low atomic oxygen flux with high contaminant flux. Modeling predictions indicate that the deposition of contaminant films early in a LEO flight should depend much more on atomic oxygen flux than

Aquaporins Mediate Silicon Transport in Humans.

PubMed

Garneau, Alexandre P; Carpentier, Gabriel A; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J; Bélanger, Richard; Côté, François; Isenring, Paul

2015-01-01

In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

Low loss poly-silicon for high performance capacitive silicon modulators.

PubMed

Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric

2018-03-05

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.

Silicon isotope fractionation in bamboo and its significance to the biogeochemical cycle of silicon

NASA Astrophysics Data System (ADS)

Ding, T. P.; Zhou, J. X.; Wan, D. F.; Chen, Z. Y.; Wang, C. Y.; Zhang, F.

2008-03-01

A systematic investigation on silica contents and silicon isotope compositions of bamboos was undertaken. Seven bamboo plants and related soils were collected from seven locations in China. The roots, stem, branch and leaves for each plant were sampled and their silica contents and silicon isotope compositions were determined. The silica contents and silicon isotope compositions of bulk and water-soluble fraction of soils were also measured. The silica contents of studied bamboo organs vary from 0.30% to 9.95%. Within bamboo plant the silica contents show an increasing trend from stem, through branch, to leaves. In bamboo roots the silica is exclusively in the endodermis cells, but in stem, branch and leaves, the silica is accumulated mainly in epidermal cells. The silicon isotope compositions of bamboos exhibit significant variation, from -2.3‰ to 1.8‰, and large and systematic silicon isotope fractionation was observed within each bamboo. The δ 30Si values decrease from roots to stem, but then increase from stem, through branch, to leaves. The ranges of δ 30Si values within each bamboo vary from 1.0‰ to 3.3‰. Considering the total range of silicon isotope composition in terrestrial samples is only 7‰, the observed silicon isotope variation in single bamboo is significant and remarkable. This kind of silicon isotope variation might be caused by isotope fractionation in a Rayleigh process when SiO 2 precipitated in stem, branches and leaves gradually from plant fluid. In this process the Si isotope fractionation factor between dissolved Si and precipitated Si in bamboo ( αpre-sol) is estimated to be 0.9981. However, other factors should be considered to explain the decrease of δ 30Si value from roots to stem, including larger ratio of dissolved H 4SiO 4 to precipitated SiO 2 in roots than in stem. There is a positive correlation between the δ 30Si values of water-soluble fractions in soils and those of bulk bamboos, indicating that the dissolved

Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

NASA Astrophysics Data System (ADS)

Wang, Chenlei

The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

Review Application of Nanostructured Black Silicon

NASA Astrophysics Data System (ADS)

Lv, Jian; Zhang, Ting; Zhang, Peng; Zhao, Yingchun; Li, Shibin

2018-04-01

As a widely used semiconductor material, silicon has been extensively used in many areas, such as photodiode, photodetector, and photovoltaic devices. However, the high surface reflectance and large bandgap of traditional bulk silicon restrict the full use of the spectrum. To solve this problem, many methods have been developed. Among them, the surface nanostructured silicon, namely black silicon, is the most efficient and widely used. Due to its high absorption in the wide range from UV-visible to infrared, black silicon is very attractive for using as sensitive layer of photodiodes, photodetector, solar cells, field emission, luminescence, and other photoelectric devices. Intensive study has been performed to understand the enhanced absorption of black silicon as well as the response extended to infrared spectrum range. In this paper, the application of black silicon is systematically reviewed. The limitations and challenges of black silicon material are also discussed. This article will provide a meaningful introduction to black silicon and its unique properties.

Hall mobility in multicrystalline silicon

NASA Astrophysics Data System (ADS)

Schindler, F.; Geilker, J.; Kwapil, W.; Warta, W.; Schubert, M. C.

2011-08-01

Knowledge of the carrier mobility in silicon is of utmost importance for photovoltaic applications, as it directly influences the diffusion length and thereby the cell efficiency. Moreover, its value is needed for a correct quantitative evaluation of a variety of lifetime measurements. However, models that describe the carrier mobility in silicon are based on theoretical calculations or fits to experimental data in monocrystalline silicon. Multicrystalline (mc) silicon features crystal defects such as dislocations and grain boundaries, with the latter possibly leading to potential barriers through the trapping of charge carriers and thereby influencing the mobility, as shown, for example, by Maruska et al. [Appl. Phys. Lett. 36, 381 (1980)]. To quantify the mobilities in multicrystalline silicon, we performed Hall measurements in p-type mc-Si samples of various resistivities and different crystal structures and compared the data to majority carrier Hall mobilities in p-type monocrystalline floatzone (FZ) silicon. For lack of a model that provides reliable values of the Hall mobility in silicon, an empirical fit similar to existing models for conductivity mobilities is proposed based on Hall measurements of monocrystalline p-type FZ silicon. By comparing the measured Hall mobilities obtained from mc silicon with the corresponding Hall mobilities in monocrystalline silicon of the same resistivity, we found that the mobility reduction due to the presence of crystal defects in mc-Si ranges between 0% and 5% only. Mobility decreases of up to 30% as reported by Peter et al. [Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008], or even of a factor of 2 to 3 as detected by Palais et al. [Mater. Sci. Eng. B 102, 184 (2003)], in multicrystalline silicon were not observed.

Fibers based on polyethylene with silicon and silicon carbide nanoparticles

NASA Astrophysics Data System (ADS)

Olkhov, A. A.; Krutikova, A. A.; Kovaleva, A. N.; Rychagov, O. V.; Ischenko, A. A.

2017-12-01

In the paper, fibrous materials based on polyethylene with nanosized silicon and silicon carbide obtained by the plasma chemical method have been obtained. The concentration of nanosilicon nanoparticles was 0.1-1.5%. Fibers absorb UV radiation in the range 200-400 nm. The size of silicon nanoparticles and dispersion in fibers are estimated by X-ray diffraction. It is shown that silicon nanoparticles exert no effect on the formation of the internal structure of the PE matrix. The degree of crystallinity, melting and crystallization temperatures remain constant. The surface properties of films are investigated by triboelectric methods and by determining the wetting angle. The surface properties of composite films do not differ from the properties of PE films with the concentration of nanoparticles from 0.1 to 1.0%. At a 1.5% content of n-SiC, the microrelief of the surface changes, and the friction coefficient of the films increases. The resulting films are recommended for application as a UV protective coating.

Process for making silicon

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Silicone Gel-Filled Breast Implants

MedlinePlus

... and Medical Procedures Implants and Prosthetics Breast Implants Silicone Gel-Filled Breast Implants Share Tweet Linkedin Pin ... sharing options Linkedin Pin it Email Print Description: Silicone gel-filled breast implants have a silicone outer ...

Modulating the band structure and sub-bandgap absorption of Co-hyperdoped silicon by co-doping with shallow-level elements

NASA Astrophysics Data System (ADS)

Dong, Xiao; Fang, Xiuxiu; Wang, Yongyong; Song, Xiaohui; Lu, Zhansheng

2018-06-01

Hyperdoped group-III elements can lower the Fermi energy in the band structures of Co-hyperdoped silicon. When the Co-to-X (X = B, Al, Ga) ratio is 2:1, the intermediate band (IB) in the bandgap includes the Fermi energy and is partially filled by electrons, which is in accordance with the requirement of an IB material. The hyperdoped X atoms can cause the blueshift of the sub-bandgap absorption of the compound compared with the material with no shallow-level elements, which is due to the enlargement of the electronic excitation energy of the Co,X-co-doped silicon.

Aquaporins Mediate Silicon Transport in Humans

PubMed Central

Garneau, Alexandre P.; Carpentier, Gabriel A.; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F.; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J.; Bélanger, Richard; Côté, François; Isenring, Paul

2015-01-01

In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates. PMID:26313002

Surface reaction of silicon chlorides during atomic layer deposition of silicon nitride

NASA Astrophysics Data System (ADS)

Yusup, Luchana L.; Park, Jae-Min; Mayangsari, Tirta R.; Kwon, Young-Kyun; Lee, Won-Jun

2018-02-01

The reaction of precursor with surface active site is the critical step in atomic layer deposition (ALD) process. We performed the density functional theory calculation with DFT-D correction to study the surface reaction of different silicon chloride precursors during the first half cycle of ALD process. SiCl4, SiH2Cl2, Si2Cl6 and Si3Cl8 were considered as the silicon precursors, and an NH/SiNH2*-terminated silicon nitride surface was constructed to model the thermal ALD processes using NH3 as well as the PEALD processes using NH3 plasma. The total energies of the system were calculated for the geometry-optimized structures of physisorption, chemisorption, and transition state. The order of silicon precursors in energy barrier, from lowest to highest, is Si3Cl8 (0.92 eV), Si2Cl6 (3.22 eV), SiH2Cl2 (3.93 eV) and SiCl4 (4.49 eV). Silicon precursor with lower energy barrier in DFT calculation showed lower saturation dose in literature for both thermal and plasma-enhanced ALD of silicon nitride. Therefore, DFT calculation is a promising tool in predicting the reactivity of precursor during ALD process.

Consequences of Atomic Oxygen Interaction With Silicone and Silicone Contamination on Surfaces in Low Earth Orbit

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; deGroh, Kim K.; Rutledge, Sharon K.; Haytas, Christy A.

1999-01-01

The exposure of silicones to atomic oxygen in low Earth orbit causes oxidation of the surface, resulting in conversion of silicone to silica. This chemical conversion increases the elastic modulus of the surface and initiates the development of a tensile strain. Ultimately, with sufficient exposure, tensile strain leads to cracking of the surface enabling the underlying unexposed silicone to be converted to silica resulting in additional depth and extent of cracking. The use of silicone coatings for the protection of materials from atomic oxygen attack is limited because of the eventual exposure of underlying unprotected polymeric material due to deep tensile stress cracking of the oxidized silicone. The use of moderate to high volatility silicones in low Earth orbit has resulted in a silicone contamination arrival at surfaces which are simultaneously being bombarded with atomic oxygen, thus leading to conversion of the silicone contaminant to silica. As a result of these processes, a gradual accumulation of contamination occurs leading to deposits which at times have been up to several microns thick (as in the case of a Mir solar array after 10 years in space). The contamination species typically consist of silicon, oxygen and carbon. which in the synergistic environment of atomic oxygen and UV radiation leads to increased solar absorptance and reduced solar transmittance. A comparison of the results of atomic oxygen interaction with silicones and silicone contamination will be presented based on the LDEF, EOIM-111, Offeq-3 spacecraft and Mir solar array in-space results. The design of a contamination pin-hole camera space experiment which uses atomic oxygen to produce an image of the sources of silicone contamination will also be presented.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

NASA Astrophysics Data System (ADS)

Hussain, Muhammad M.; Rojas, Jhonathan P.; Torres Sevilla, Galo A.

2013-05-01

Today's information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor - heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon - industry's darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%).

An FPGA-Based Silicon Neuronal Network with Selectable Excitability Silicon Neurons

PubMed Central

Li, Jing; Katori, Yuichi; Kohno, Takashi

2012-01-01

This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN) and the transmitter release based silicon synapse, allow us to tune the excitability of silicon neurons and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with 256 full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs. PMID:23269911

Production development of organic nonflammable spacecraft potting, encapsulating and conformal coating compounds. Volume 1: Discussion, figures, and references

NASA Technical Reports Server (NTRS)

Lieberman, S. L.

1974-01-01

Based upon extensive contacts with vendors, a broad array of non-flammable polymeric specie, and additives generally noted to have flame retarding properties, were considered. The following polymeric matrices were examined: modified silicone and fluorosilicone RTV's polyesters, epoxies, urethanes, and epoxy-urethanes. Optimization of formulations to obtain a suitable balance between the various properties and flammability resistance led to the final selection of a silicone RTV/additive-loaded compound which meets almost all program requirements. The very low valued properties found are within a realistic level of design toleration. Complete formulation, processing, and test data is provided for this compound, EPOCAST 87517-A/B, and the other formulations prepared by the project. Details of those test methods are presented along with procedures utilized in the program. In addition, a description of the special flammability facility previously designed and then modified for this program is also presented.

Nanostructured silicon for thermoelectric

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

1366 Project Silicon: Reclaiming US Silicon PV Leadership

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorenz, Adam

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling ofmore » 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. Sun

Investigation of silicon surface passivation by silicon nitride film deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

Comparison of the surface charge behavior of commercial silicon nitride and silicon carbide powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1988-01-01

The adsorption and desorption of protons from aqueous solution onto the surfaces of a variety of commercial silicon carbide and silicon nitride powders has been examined using a surface titration methodology. This method provides information on some colloidal characteristics, such as the point of zero charge (pzc) and the variation of proton adsorption with dispersion pH, useful for the prediction of optimal ceramic-processing conditions. Qualitatively, the magnitude of the proton adsorption from solution reveals small differences among all of the materials studied. However, the results show that the pzc for the various silicon nitride powders is affected by the powder synthesis route. Complementary investigations have shown that milling can also act to shift the pzc exhibited by silicon nitride powder. Also, studies of the role of the electrolyte in the development of surface charge have indicated no evidence of specific adsorption of ammonium ion on either silicon nitride or silicon carbide powders.

Holographic detection of hydrocarbon gases and other volatile organic compounds.

PubMed

Martínez-Hurtado, J L; Davidson, C A B; Blyth, J; Lowe, C R

2010-10-05

There is a need to develop sensors for real-time monitoring of volatile organic compounds (VOCs) and hydrocarbon gases in both external and indoor environments, since these compounds are of growing concern in human health and welfare. Current measurement technology for VOCs requires sophisticated equipment and lacks the prospect for rapid real-time monitoring. Holographic sensors can give a direct reading of the analyte concentration as a color change. We report a technique for recording holographic sensors by laser ablation of silver particles formed in situ by diffusion. This technique allows a readily available hydrophobic silicone elastomer to be transformed into an effective sensor for hydrocarbon gases and other volatile compounds. The intermolecular interactions present between the polymer and molecules are used to predict the sensor performance. The hydrophobicity of this material allows the sensor to operate without interference from water and other atmospheric gases and thus makes the sensor suitable for biomedical, industrial, or environmental analysis.

Endoscopic dacryocystorhinostomy without silicone stent.

PubMed

Yeon, Je Yeob; Shim, Woo Sub

2012-06-01

In nasolacrimal duct (NLD) obstruction patients that undergo endoscopic dacryocystorhinostomy (DCR), creation of a patent rhinostomy with adequate epithelialization can be accomplished without a stent. However, in common canalicular obstruction patients, a silicone stent seems to have a beneficial role and to bear more favorable results. The aim of this study was to evaluate the surgical outcome of endoscopic DCR without the use of a silicone stent. In all, 36 patients (41 eyes) who underwent endoscopic DCR were enrolled in this study. The patients were classified into a DCR with silicone stent group and a DCR without silicone stent group. Then each of the groups was subdivided into common canalicular obstruction group and NLD obstruction group. Surgical outcomes were evaluated by postoperative symptom improvement and patency of the rhinostomy under nasal endoscopic exam. The epiphora was improved in 84.2% of the silicone stent group and 81.8% of the non-silicone stent group. Categorized by the level of obstruction, in common canalicular obstruction, the success rate was 84.5% (11/13) in the silicone stent group and 57.1% (4/7) in the no stent group. In NLD obstruction, the success rate was 83.0% (5/6) in the silicone stent group and 93.3% (14/15) in the no stent group.

Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

NASA Technical Reports Server (NTRS)

1986-01-01

The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

Porous silicon carbide (SIC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Narrow band gap amorphous silicon semiconductors

DOEpatents

Madan, A.; Mahan, A.H.

1985-01-10

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Roadmap on silicon photonics

NASA Astrophysics Data System (ADS)

Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

2016-07-01

Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

Silicon isotope fractionation in rice and cucumber plants over a life cycle: Laboratory studies at different external silicon concentrations

NASA Astrophysics Data System (ADS)

Sun, Yan; Wu, Lianghuan; Li, Xiaoyan; Sun, Li; Gao, Jianfei; Ding, Tiping

2016-11-01

Understanding the variations of silicon isotopes in terrestrial higher plants can be helpful toward elucidating the global biogeochemical silicon cycle. We studied silicon isotope fractionation in rice and cucumber plants over their entire life cycles. These two different silicon-absorbing plants were grown hydroponically at different external silicon concentrations. The ranges of δ30Si values in rice were -1.89‰ to 1.69‰, -1.81‰ to 1.96‰, and -2.08‰ to 2.02‰ at 0.17 mM, 1.70 mM, and 8.50 mM silicon concentrations, respectively. The ranges of δ30Si values in cucumber were -1.38‰ to 1.21‰, -1.33‰ to 1.26‰, and -1.62‰ to 1.40‰ at 0.085 mM, 0.17 mM, and 1.70 mM external silicon concentrations, respectively. A general increasing trend in δ30Si values from lower to upper plant parts reflected the preferential incorporation of lighter silicon isotopes from transpired water to biogenic opal. Furthermore, the active uptake mechanism regulated by several transporters might have also played an important role in the preferential transport of heavy silicon isotopes into aboveground plant parts. This suggested that silicon isotope fractionation in both rice and cucumber was a Rayleigh-like process. The data on δ30Si values for the whole plants and nutrient solutions indicated that biologically mediated silicon isotope fractionation occurred during silicon uptake by roots. At lower external silicon concentrations, heavy silicon isotopes entered plants more readily than light silicon isotopes. Conversely, at higher external silicon concentrations, light silicon isotopes entered plants more readily than heavy silicon isotopes.

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Engineering functionalized multi-phased silicon/silicon oxide nano-biomaterials to passivate the aggressive proliferation of cancer

PubMed Central

Premnath, P.; Tan, B.; Venkatakrishnan, K.

2015-01-01

Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy. PMID:26190009

Removal of inclusions from silicon

NASA Astrophysics Data System (ADS)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n-type silicon/n-type silicon

NASA Astrophysics Data System (ADS)

Ikedo, Akihito; Kawashima, Takahiro; Kawano, Takeshi; Ishida, Makoto

2009-07-01

Repeated vapor-liquid-solid (VLS) growth with Au and PH3-Si2H6 mixture gas as the growth catalyst and silicon source, respectively, was used to construct n-type silicon/n-type silicon wire arrays of various lengths. Silicon wires of various lengths within an array could be grown by employing second growth over the first VLS grown wire. Additionally, the junction at the interface between the first and the second wires were examined. Current-voltage measurements of the wires exhibited linear behavior with a resistance of 850 Ω, confirming nonelectrical barriers at the junction, while bending tests indicated that the mechanical properties of the wire did not change.

Silicon-on ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Grung, B. L.; Heaps, J. D.; Schmit, F. M.; Schuldt, S. B.; Zook, J. D.

1981-01-01

The technical feasibility of producing solar-cell-quality sheet silicon to meet the Department of Energy (DOE) 1986 overall price goal of $0.70/watt was investigated. With the silicon-on-ceramic (SOC) approach, a low-cost ceramic substrate is coated with large-grain polycrystalline silicon by unidirectional solidification of molten silicon. This effort was divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating designated SCIM-coating, and acronym for Silicon Coating by an Inverted Meniscus (SCIM); (3) material characterization; (4) cell fabrication and evaluation; and (5) theoretical analysis. Both coating approaches were successful in producing thin layers of large grain, solar-cell-quality silicon. The dip-coating approach was initially investigated and considerable effort was given to this technique. The SCIM technique was adopted because of its scale-up potential and its capability to produce more conventiently large areas of SOC.

Clathrate compounds and method of manufacturing

DOEpatents

Nolas, George S [Tampa, FL; Witanachchi, Sarath [Tampa, FL; Mukherjee, Pritish [Tampa, FL

2009-05-19

The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si.sub.136-yGe.sub.y, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.

Compensated amorphous silicon solar cell

DOEpatents

Devaud, Genevieve

1983-01-01

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Silicon microfabricated beam expander

NASA Astrophysics Data System (ADS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Silicon production process evaluations

NASA Technical Reports Server (NTRS)

1982-01-01

Engineering design of the third distillation column in the process was accomplished. The initial design is based on a 94.35% recovery of dichlorosilane in the distillate and a 99.9% recovery of trichlorosilane in the bottoms. The specified separation is achieved at a reflux ratio of 15 with 20 trays (equilibrium stages). Additional specifications and results are reported including equipment size, temperatures and pressure. Specific raw material requirements necessary to produce the silicon in the process are presented. The primary raw materials include metallurgical grade silicon, silicon tetrachloride, hydrogen, copper (catalyst) and lime (waste treatment). Hydrogen chloride is produced as by product in the silicon deposition. Cost analysis of the process was initiated during this reporting period.

Corrosion Characteristics of Silicon Carbide and Silicon Nitride

PubMed Central

Munro, R. G.; Dapkunas, S. J.

1993-01-01

The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags. PMID:28053489

Development and application of a non-targeted extraction method for the analysis of migrating compounds from plastic baby bottles by GC-MS.

PubMed

Onghena, Matthias; van Hoeck, Els; Vervliet, Philippe; Scippo, Marie Louise; Simon, Coraline; van Loco, Joris; Covaci, Adrian

2014-01-01

In 2011, the European Union prohibited the production of polycarbonate (PC) baby bottles due to the toxic effects of the PC monomer bisphenol-A. Therefore, baby bottles made of alternative materials, e.g. polypropylene (PP) or polyethersulphone (PES), are currently marketed. The principal aim of the study was the identification of major compounds migrating from baby bottles using a liquid-liquid extraction followed by GC/MS analysis. A 50% EtOH in water solution was selected as a simulant for milk. After sterilisation of the bottle, three migration experiments were performed during 2 h at 70°C. A non-targeted liquid-liquid extraction with ethyl acetate-n-hexane (1:1) was performed on the simulant samples. Identification of migrants from 24 baby bottles was done using commercially available WILEY and NIST mass spectra libraries. Differences in the migrating compounds and their intensities were observed between the different types of plastics, but also between the same polymer from a different producer. Differences in the migration patterns were perceived as well between the sterilisation and the migrations and within the different migrations. Silicone, Tritan™ and PP exhibited a wide variety of migrating compounds, whereas PES and polyamide (PA) showed a lower amount of migrants, though sometimes in relatively large concentrations (azacyclotridecan-2-one up to 250 µg kg⁻¹). Alkanes (especially in PP bottles), phthalates (dibutylphthalate in one PP bottle (±40 µg kg⁻¹) and one silicone bottle (±25 µg kg⁻¹); diisobutylphthalate in one PP (±10 µg kg⁻¹), silicone (up to ±80 µg kg⁻¹); and Tritan™ bottle (±30 µg kg⁻¹)), antioxidants (Irgafos 168, degradation products of Irganox 1010 and Irganox 1076), etc. were detected for PP, silicone and Tritan™ bottles. Although the concentrations were relatively low, some compounds not authorised by European Union Regulation No. 10/2011, such as 2,4-di-tert-butylphenol (10-100 µg kg⁻¹) or 2

Chemistry challenges in lead optimization: silicon isosteres in drug discovery.

PubMed

Showell, Graham A; Mills, John S

2003-06-15

During the lead optimization phase of drug discovery projects, the factors contributing to subsequent failure might include poor portfolio decision-making and a sub-optimal intellectual property (IP) position. The pharmaceutical industry has an ongoing need for new, safe medicines with a genuine biomedical benefit, a clean IP position and commercial viability. Inherent drug-like properties and chemical tractability are also essential for the smooth development of such agents. The introduction of bioisosteres, to improve the properties of a molecule and obtain new classes of compounds without prior art in the patent literature, is a key strategy used by medicinal chemists during the lead optimization process. Sila-substitution (C/Si exchange) of existing drugs is an approach to search for new drug-like candidates that have beneficial biological properties and a clear IP position. Some of the fundamental differences between carbon and silicon can lead to marked alterations in the physicochemical and biological properties of the silicon-containing analogues and the resulting benefits can be exploited in the drug design process.

Extracting Silicon From Sodium-Process Products

NASA Technical Reports Server (NTRS)

Kapur, V.; Sanjurjo, A.; Sancier, K. M.; Nanis, L.

1982-01-01

New acid leaching process purifies silicon produced in reaction between silicon fluoride and sodium. Concentration of sodium fluoride and other impurities and byproducts remaining in silicon are within acceptable ranges for semi-conductor devices. Leaching process makes sodium reduction process more attractive for making large quantities of silicon for solar cells.

Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

PubMed

Ikeda, Kazuhiro; Saperstein, Robert E; Alic, Nikola; Fainman, Yeshaiahu

2008-08-18

We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

Colloidal characterization of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Electrolytic photodissociation of chemical compounds by iron oxide electrodes

DOEpatents

Somorjai, Gabor A.; Leygraf, Christofer H.

1984-01-01

Chemical compounds can be dissociated by contacting the same with a p/n type semi-conductor diode having visible light as its sole source of energy. The diode consists of low cost, readily available materials, specifically polycrystalline iron oxide doped with silicon in the case of the n-type semi-conductor electrode, and polycrystalline iron oxide doped with magnesium in the case of the p-type electrode. So long as the light source has an energy greater than 2.2 electron volts, no added energy source is needed to achieve dissociation.

Long-Term Stability of Mold Compounds and the Influence on Semiconductor Device Reliability

NASA Astrophysics Data System (ADS)

Mahler, Joachim; Mengel, Manfred

2012-07-01

Lifetimes of semiconductor devices are specified according to the products and their applications to ensure safe operation, for instance as part of an automobile product. The long-term stability of the device is strongly dependent on the chip encapsulation and its adhesion to the chip and substrate. Molded silicon strips that act as a model system for molded chips inside semiconductor devices were investigated. Four commercially available mold compounds were applied on silicon strips and stored over 5 years at room temperature (RT), and changes in the thermomechanical behavior were analyzed. After storage, all molded strips exhibited warpage reduction in the range of 11% to 14% at RT with respect to the initial warpage. The temperatures for the stress-free state also changed during storage and were located between 228°C and 235°C for each mold. Additional stress applied to the stored modules, by temperature cycling as well as high-temperature storage, increased the warpage of the molded silicon samples. For further interpretation of measured results, finite-element method calculations were performed.

Micromachining of silicon carbide on silicon fabricated by low-pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Behrens, Ingo; Peiner, Erwin; Bakin, Andrey S.; Schlachetzki, Andreas

2002-07-01

We describe the fabrication of silicon carbide layers for micromechanical applications using low-pressure metal-organic chemical vapour deposition at temperatures below 1000 °C. The layers can be structured by lift-off using silicon dioxide as a sacrificial layer. A large selectivity with respect to silicon can be exploited for bulk micromachining. Thin membranes are fabricated which exhibit high mechanical quality, as necessary for applications in harsh environments.

Application of compound parabolic concentrators to solar photovoltaic conversion. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cole, R.L.; Gorski, A.J.; Graven, R.M.

1977-02-01

The final results of an analytical and experimental study of the application of nonimaging concentrators to solar photovoltaic conversion are presented. Two versions of the Compound Parabolic Concentrator (CPC) were considered, the Dielectric Compound Parabolic Concentrator (DCPC) in which the concentrator is filled with a dielectric material that satisfies requirements for Total Internal Reflection (TIR), and a conventional CPC in which metallic reflection is used for the mirror surfaces. Two working prototype panels were constructed and tested during the course of the program. The first was a 1.22 m by 1.22 m DCPC panel that requires only ten adjustments/year, hasmore » a panel utilization factor (packing factor) of 96%, and delivered the equivalent of 138 W (peak) under 1 kW/m/sup 2/ direct insolation. The net energy conversion efficiency was 10.3% over the entire panel area. The second panel was a conventional CPC panel measuring 1.22 m by 1.22 m. This panel requires thirty-six adjustments per year, and delivers the equivalent of 97 W when under 1 kW/m/sup 2/ direct insolation. The results of a cost-effectiveness analysis of the concept of using nonimaging concentrators for photovoltaic conversion are also presented. The concentrator panels showed a decided savings in comparison to the cost of flat plate photovoltaic panels, both at present-day silicon costs ($2000/m/sup 2/) and projected lower silicon costs ($200/m/sup 2/). At a silicon cost of $200/m/sup 2/, a two-dimensional (cone) version of the collector has the potential for achieving from $0.60-2.00 per average watt (about $0.15-0.50 per peak watt) while requiring only crude (+-4.5/sup 0/) tracking.« less

Silicone nasal prosthesis retained by an intranasal stent: a clinical report.

PubMed

Goveas, Reiyal; Puttipisitchet, Ongart; Shrestha, Binit; Thaworanunta, Sita; Srithavaj, M L Theerathavaj

2012-08-01

Nasal defects after tumor excision can leave a patient functionally and esthetically impaired. Loss of nasal septal cartilage support causes the soft tissue to collapse or undergo stenosis, further compounding the problem. Intranasal stents can be used to maintain the patency of such nasal defects. This clinical report describes the use of an acrylic resin nasal stent bonded to a silicone nasal prosthesis to rehabilitate a patient with a nasal defect. Copyright © 2012 The Editorial Council of the Journal of Prosthetic Dentistry. Published by Mosby, Inc. All rights reserved.

Pinpoint and bulk electrochemical reduction of insulating silicon dioxide to silicon.

PubMed

Nohira, Toshiyuki; Yasuda, Kouji; Ito, Yasuhiko

2003-06-01

Silicon dioxide (SiO(2)) is conventionally reduced to silicon by carbothermal reduction, in which the oxygen is removed by a heterogeneous-homogeneous reaction sequence at approximately 1,700 degrees C. Here we report pinpoint and bulk electrochemical methods for removing oxygen from solid SiO(2) in a molten CaCl(2) electrolyte at 850 degrees C. This approach involves a 'contacting electrode', in which a metal wire supplies electrons to a selected region of the insulating SiO(2). Bulk reduction of SiO(2) is possible by increasing the number of contacting points. The same method was also demonstrated with molten LiCl-KCl-CaCl(2) at 500 degrees C. The novelty and relative simplicity of this method might lead to new processes in silicon semiconductor technology, as well as in high-purity silicon production. The methodology may be applicable to electrochemical processing of a wide variety of insulating materials, provided that the electrolyte dissolves the appropriate constituent ion(s) of the material.

Enhanced Raman scattering in porous silicon grating.

PubMed

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

Evaluation of Porous Silicon Oxide on Silicon Microcantilevers for Sensitive Detection of Gaseous HF.

PubMed

Wallace, Ryan A; Sepaniak, Michael J; Lavrik, Nickolay V; Datskos, Panos G

2017-06-06

Sensitive detection of harmful chemicals in industrial applications is pertinent to safety. In this work, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the MCs that have been mechanically manipulated to increase sensitivity. Included is the evaluation of porous silicon oxide present on different geometries of MCs and exposed to varying concentrations of hydrogen fluoride in humid air. Profilometry and the signal generated by the stress-induced porous silicon oxide (PSO) coating and bending of the MC were used as methods of evaluation.

Evaluation of Porous Silicon Oxide on Silicon Microcantilevers for Sensitive Detection of Gaseous HF

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wallace, Ryan A.; Sepaniak, Michael J.; Lavrik, Nickolay V.

Sensitive detection of harmful chemicals in industrial applications is pertinent to safety. In this paper, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the MCs that have been mechanically manipulated to increase sensitivity. Included is the evaluation of porous silicon oxide present on different geometries of MCs and exposed to varying concentrations of hydrogen fluoride in humid air. Finally, profilometry and the signal generated by the stress-induced porous silicon oxide (PSO) coating and bending of the MC were used as methods of evaluation.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Evaluation of Porous Silicon Oxide on Silicon Microcantilevers for Sensitive Detection of Gaseous HF

DOE PAGES

Wallace, Ryan A.; Sepaniak, Michael J.; Lavrik, Nickolay V.; ...

2017-05-10

Sensitive detection of harmful chemicals in industrial applications is pertinent to safety. In this paper, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the MCs that have been mechanically manipulated to increase sensitivity. Included is the evaluation of porous silicon oxide present on different geometries of MCs and exposed to varying concentrations of hydrogen fluoride in humid air. Finally, profilometry and the signal generated by the stress-induced porous silicon oxide (PSO) coating and bending of the MC were used as methods of evaluation.

Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

NASA Technical Reports Server (NTRS)

Biedenbender, M. D.; Kapoor, V. J.

1990-01-01

A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

Methods for producing silicon carbide fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garnier, John E.; Griffith, George W.

Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Silicon Technologies Adjust to RF Applications

NASA Technical Reports Server (NTRS)

Reinecke Taub, Susan; Alterovitz, Samuel A.

1994-01-01

Silicon (Si), although not traditionally the material of choice for RF and microwave applications, has become a serious challenger to other semiconductor technologies for high-frequency applications. Fine-line electron- beam and photolithographic techniques are now capable of fabricating silicon gate sizes as small as 0.1 micron while commonly-available high-resistivity silicon wafers support low-loss microwave transmission lines. These advances, coupled with the recent development of silicon-germanium (SiGe), arm silicon integrated circuits (ICs) with the speed required for increasingly higher-frequency applications.

Ultrasonic Measurement Of Silicon-Growth Interface

NASA Technical Reports Server (NTRS)

Heyser, Richard C.

1988-01-01

Position of interface between silicon melt and growing ribbon of silicon measured with aid of reflected ultrasound, according to proposal. Reflections reveal characteristics of ribbon and melt. Ultrasound pulses travel through rods to silicon ribbon growing by dendritic-web process. Rods return reflections of pulses to sonic transducers. Isolate transducers thermally, but not acoustically, from hot silicon melt.

Adjustable Lid Aids Silicon-Ribbon Growth

NASA Technical Reports Server (NTRS)

Mchugh, J. P.; Steidensticker, R. G.; Duncan, C. S.

1985-01-01

Closely-spaced crucible cover speeds up solidification. Growth rate of dendritic-web silicon ribbon from molten silicon increased by controlling distance between crucible susceptor lid and liquid/solid interface. Lid held in relatively high position when crucible newly filled with chunks of polycrystalline silicon. As silicon melts and forms pool of liquid at lower level, lid gradually lowered.

Synthesis and electrochemical characterization of Silicon clathrates as anode materials for Lithium ion batteries

NASA Astrophysics Data System (ADS)

Raghavan, Rahul

Novel materials for Li-ion batteries is one of the principle thrust areas for current research in energy storage, more so than most, considering its widespread use in portable electronic gadgets and plug-in electric and hybrid cars. One of the major limiting factors in a Li-ion battery's energy density is the low specific capacities of the active materials in the electrodes. In the search for high-performance anode materials for Li-ion batteries, many alternatives to carbonaceous materials have been studied. Both cubic and amorphous silicon can reversibly alloy with lithium and have a theoretical capacity of 3500 mAh/g, making silicon a potential high density anode material. However, a large volume expansion of 300% occurs due to changes in the structure during lithium insertion, often leading to pulverization of the silicon. To this end, a class of silicon based cage compounds called clathrates are studied for electrochemical reactivity with lithium. Silicon-clathrates consist of silicon covalently bonded in cage structures comprised of face sharing Si20, Si24 and/or Si28 clusters with guest ions occupying the interstitial positions in the polyhedra. Prior to this, silicon clathrates have been studied primarily for their superconducting and thermoelectric properties. In this work, the synthesis and electrochemical characterization of two categories of silicon clathrates - Type-I silicon clathrate with aluminum framework substitution and barium guest ions (Ba8AlxSi46-x) and Type-II silicon clathrate with sodium guest ions (Nax Si136), are explored. The Type-I clathrate, Ba8AlxSi46-x consists of an open framework of aluminium and silicon, with barium (guest) atoms occupying the interstitial positions. X-ray diffraction studies have shown that a crystalline phase of clathrate is obtained from synthesis, which is powdered to a fine particle size to be used as the anode material in a Li-ion battery. Electrochemical measurements of these type of clathrates have shown

Silicon nitride boundary lubrication: Effect of oxygenates

NASA Astrophysics Data System (ADS)

Gates, Richard S.; Hsu, Stephen M.

1995-07-01

A ball-on-three-flat (BTF) wear tester was used to investigate the boundary lubricating characteristics of oxygenates on a commercial silicon nitride. A wide variety of oxygen-containing compounds containing hydroxyl functioal groups were more effective compared to a base case of neat paraffin oil. Decreases of up to 58% in friction coefficient, and 95% in wear were obtained. In most cases, films were obseved in and around the wear scar, suggesting chemical reactions had taken place in the contact. Additional wear tests, conducted using neat shorter-chain linear primary alcohols, i.e., 6-10 carbons, demonstrated boundary lubrication protection, with longer chain length providing better antiwear performance. A study of several C8 compounds with specific oxygen-containing functional groups (primary alcohol, secondary alcohols, acid, aldehyde, and ketone) demonstrated that the primary alcohol had the strongest boundary lubricating effect. Varying the amount of water in the alcohols had little effect on friction and wear, suggesting that the boundary lubrication effects observed were not merely due to dissolved water in these fluids, but some characteristic chemical interaction with the hydroxyl functional group of the alcohols and acids.

High purity silane and silicon production

NASA Technical Reports Server (NTRS)

Breneman, William C. (Inventor)

1987-01-01

Silicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

NASA Astrophysics Data System (ADS)

Youroukov, S.; Kitova, S.; Danev, G.

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

Synthesis and characterization of silicon nanorod on n-type porous silicon.

PubMed

Behzad, Kasra; Mat Yunus, Wan Mahmood; Bahrami, Afarin; Kharazmi, Alireza; Soltani, Nayereh

2016-03-20

This work reports a new method for growing semiconductor nanorods on a porous silicon substrate. After preparation of n-type porous silicon samples, a thin layer of gold was deposited on them. Gold deposited samples were annealed at different temperatures. The structural, thermal, and optical properties of the samples were studied using a field emission scanning electron microscope (FESEM), photoacoustic spectroscopy, and photoluminescence spectroscopy, respectively. FESEM analysis revealed that silicon nanorods of different sizes grew on the annealed samples. Thermal behavior of the samples was studied using photoacoustic spectroscopy. Photoluminescence spectroscopy showed that the emission peaks were degraded by gold deposition and attenuated for all samples by annealing.

Determination of Silicon in Hydrazine

NASA Technical Reports Server (NTRS)

McClure, Mark B.; Mast, Dion; Greene, Ben; Maes, Miguel J.

2006-01-01

Inductively coupled plasma-mass spectrometry (ICP-MS) is a highly sensitive technique sometimes used for the trace determination of silicon at a mass-to-charge (m/z) ratio of 28, the most abundant natural isotope of silicon. Unfortunately, ICP-MS is unable to differentiate between other sources of m/z 28 and false positive results for silicon will result when other sources of m/z 28 are present. Nitrogen was a major source of m/z 28 and contributes to the m/z 28 signal when hydrazine sample or nitric acid preservative is introduced into the plasma. Accordingly, this work was performed to develop a sample preparation step coupled with an ICP-MS analysis that minimized non-silicon sources of m/z 28. In the preparatory step of this method, the hydrazine sample was first decomposed predominately to nitrogen gas and water with copper-catalyzed hydrogen peroxide. In the analysis step, ICP-MS was used without nitric acid preservative in samples or standards. Glass, a potential source of silicon contamination, was also avoided where possible. The method was sensitive, accurate, and reliable for the determination of silicon in monopropellant grade hydrazine (MPH) in AF-E-332 elastomer leaching tests. Results for silicon in MPH were comparable to those reported in the literature for other studies.

High specific activity silicon-32

DOEpatents

Phillips, Dennis R.; Brzezinski, Mark A.

1996-01-01

A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

High specific activity silicon-32

DOEpatents

Phillips, D.R.; Brzezinski, M.A.

1996-06-11

A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidation state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

Silicon quantum dots for energetic material applications

NASA Astrophysics Data System (ADS)

Adams, Sarah K.; Piekiel, Nicholas W.; Ervin, Matthew H.; Morris, Christopher J.

2018-06-01

In its history as an energetic material, porous silicon has demonstrated flame speeds in excess of 3 km s-1, tunable combustion behavior, and high energy output, which in theory makes it a very attractive energetic system. In practice, its application within the field is limited by porous silicon's typical substrate-adhered form and caustic chemical processing requirements that limit how and when porous silicon is made. In this work, we have relieved porous silicon of these constraints by creating reactive silicon quantum dots from free-standing porous silicon films. The resulting material is composed of crystalline silicon nanoparticles with diameters as small as 2 nm that retain the chemical properties of the original films including the SiH2 termination layer. The fabricated silicon particles were characterized using FTIR Spectroscopy, TEM, and EDS for determining the size and the chemical composition. For testing as an energetic material fuel, porous silicon was mixed with an oft used oxidizer, sodium perchlorate. During open-channel combustion tests, silicon quantum dots mixed with sodium perchlorate demonstrated flame speeds over 2.5 km s-1, while bomb calorimetry tests showed an average heat of combustion of 7.4 kJ g-1. These results demonstrate the ability to retain the porous silicon material properties that allow for highly energetic material reactions to occur, despite the additional processing steps to create silicon quantum dots. This opens the door for the use of porous silicon in the bulk of the energetic material application space, much of which was previously limited due to the substrate-attached nature of typical porous silicon.

Silicon nanocrystal inks, films, and methods

DOEpatents

Wheeler, Lance Michael; Kortshagen, Uwe Richard

2015-09-01

Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

Liquid- and solid-state high-resolution NMR methods for the investigation of aging processes of silicone breast implants.

PubMed

Birkefeld, Anja Britta; Bertermann, Rüdiger; Eckert, Hellmut; Pfleiderer, Bettina

2003-01-01

To investigate aging processes of silicone gel breast implants, which may include migration of free unreacted material from the gel and rubber to local (e.g. connective tissue capsule) or distant sites in the body, chemical alteration of the polymer and infiltration of body compounds, various approaches of multinuclear nuclear magnetic resonance (NMR) experiments (29Si, 13C, 1H) were evaluated. While 29Si, 13C, and 1H solid-state magic angle spinning (MAS) NMR techniques performed on virgin and explanted envelopes of silicone prostheses provided only limited information, high-resolution liquid-state NMR techniques of CDCl(3) extracts were highly sensitive analytical tools for the detection of aging related changes in the materials. Using 2D 1H, 1H correlation spectroscopy (COSY) and 29Si, 1H heteronuclear multiple bond coherence (HMBC) experiments with gradient selection, it was possible to detect lipids (mainly phospholipids) as well as silicone oligomer species in explanted envelopes and gels. Silicone oligomers were also found in connective tissue capsules, indicating that cyclic polysiloxanes can migrate from intact implants to adjacent and distant sites. Furthermore, lipids can permeate the implant and modify its chemical composition. Copyright 2002 Elsevier Science Ltd.

Process for forming retrograde profiles in silicon

DOEpatents

Weiner, K.H.; Sigmon, T.W.

1996-10-15

A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates

DOEpatents

Branagan, Daniel J [Idaho Falls, ID; Hyde, Timothy A [Idaho Falls, ID; Fincke, James R [Los Alamos, NM

2008-03-11

The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

Cleaning up Silicon

NASA Technical Reports Server (NTRS)

2000-01-01

A development program that started in 1975 between Union Carbide and JPL, led to Advanced Silicon Materials LLC's, formerly ASiMI, commercial process for producing silane in viable quantities. The process was expanded to include the production of high-purity polysilicon for electronic devices. The technology came out of JPL's Low Cost Silicon Array Project.

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

DOE PAGES

Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; ...

2015-03-24

With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm 2 2-terminal monolithic perovskite/silicon multijunction solar cell with a V OC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

Polycrystalline silicon on tungsten substrates

NASA Technical Reports Server (NTRS)

Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

1979-01-01

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Method of forming a relatively stable slip of silicon metal particles and yttrium containing particles

DOEpatents

Dickie, Ray A.; Mangels, John A.

1984-01-01

The method concerns forming a relatively stable slip of silicon metal particles and yttrium containing particles. In one embodiment, a casting slip of silicon metal particles is formed in water. Particles of a yttrium containing sintering aid are added to the casting slip. The yttrium containing sintering aid is a compound which has at least some solubility in water to form Y.sup.+3 ions which have a high potential for totally flocculating the silicon metal particles into a semiporous solid. A small amount of a fluoride salt is added to the casting slip which contains the yttrium containing sintering aid. The fluoride salt is one which will produce fluoride anions when dissolved in water. The small amount of the fluoride anions produced are effective to suppress the flocculation of the silicon metal particles by the Y.sup.+3 ions so that all particles remain in suspension in the casting slip and the casting slip has both an increased shelf life and can be used to cast articles having a relatively thick cross-section. The pH of the casting slip is maintained in a range from 7.5 to 9. Preferably, the fluoride salt used is one which is based on a monovalent cation such as sodium or ammonia. The steps of adding the yttrium containing sintering aid and the fluoride salt may be interchanged if desired, and the salt may be added to a solution containing the sintering aid prior to addition of the silicon metal particles.

Solar silicon via improved and expanded metallurgical silicon technology

NASA Technical Reports Server (NTRS)

Hunt, L. P.; Dosaj, V. D.; Mccormick, J. R.

1977-01-01

A completed preliminary survey of silica sources indicates that sufficient quantities of high-purity quartz are available in the U.S. and Canada to meet goals. Supply can easily meet demand for this little-sought commodity. Charcoal, as a reductant for silica, can be purified to a sufficient level by high-temperature fluorocarbon treatment and vacuum processing. High-temperature treatment causes partial graphitization which can lead to difficulty in smelting. Smelting of Arkansas quartz and purified charcoal produced kilogram quantities of silicon having impurity levels generally much lower than in MG-Si. Half of the goal was met of increasing the boron resistivity from 0.03 ohm-cm in metallurgical silicon to 0.3 ohm-cm in solar silicon. A cost analysis of the solidification process indicate $3.50-7.25/kg Si for the Czochralski-type process and $1.50-4.25/kg Si for the Bridgman-type technique.

Process for forming a porous silicon member in a crystalline silicon member

DOEpatents

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Short Shot Tower for Silicon

NASA Technical Reports Server (NTRS)

Bates, H. E.; Hill, D. M.; Jewett, D. N.

1983-01-01

Drop length necessary to convert molten silicon to shot reduced by proposed new process. Conversion of silicon from powder or chunks to shot often simplifies processing. Shot is more easily handled in most processing equipment. Drops of liquid silicon fall through protective cloud of argon, then through rapidly cooling bath of methanol, where they quickly turn into solid shot.

Hybrid Integrated Platforms for Silicon Photonics

PubMed Central

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Gamma radiation effects on silicon photonic waveguides.

PubMed

Grillanda, Stefano; Singh, Vivek; Raghunathan, Vivek; Morichetti, Francesco; Melloni, Andrea; Kimerling, Lionel; Agarwal, Anuradha M

2016-07-01

To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad.

Silicon crystal growth in vacuum

NASA Technical Reports Server (NTRS)

Khattak, C. P.; Schmid, F.

1982-01-01

The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.

Silicon Qubits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ladd, Thaddeus D.; Carroll, Malcolm S.

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of amore » single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.« less

Microstructured silicon radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Derzon, Mark S.; Draper, Bruce L.

2017-03-14

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

Recrystallization of polycrystalline silicon

NASA Technical Reports Server (NTRS)

Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

1981-01-01

Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

Prevention of postsurgical scars: comparsion of efficacy and convenience between silicone gel sheet and topical silicone gel.

PubMed

Kim, Sue-Min; Choi, Jung-Sik; Lee, Jung-Ho; Kim, Young-Jin; Jun, Young-Joon

2014-11-01

To date, few studies have compared the effectiveness of topical silicone gels versus that of silicone gel sheets in preventing scars. In this prospective study, we compared the efficacy and the convenience of use of the 2 products. We enrolled 30 patients who had undergone a surgical procedure 2 weeks to 3 months before joining the study. These participants were randomly assigned to 2 treatment arms: one for treatment with a silicone gel sheet, and the other for treatment with a topical silicone gel. Vancouver Scar Scale (VSS) scores were obtained for all patients; in addition, participants completed scoring patient questionnaires 1 and 3 months after treatment onset. Our results reveal not only that no significant difference in efficacy exists between the 2 products but also that topical silicone gels are more convenient to use. While previous studies have advocated for silicone gel sheets as first-line therapies in postoperative scar management, we maintain that similar effects can be expected with topical silicone gel. The authors recommend that, when clinicians have a choice of silicone-based products for scar prevention, they should focus on each patient's scar location, lifestyle, and willingness to undergo scar prevention treatment.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitancemore » behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.« less

Mitotic trafficking of silicon microparticles†

PubMed Central

Serda, Rita E.; Ferrati, Silvia; Godin, Biana; Tasciotti, Ennio; Liu, XueWu

2010-01-01

Multistage carriers were recently introduced by our laboratory, with the concurrent objectives of co-localized delivery of multiple therapeutic agents, the “theranostic” integration of bioactive moieties with imaging contrast, and the selective, potentially personalized bypassing of the multiplicity of biological barriers that adversely impact biodistribution of vascularly injected particulates. Mesoporous (“nanoporous”) silicon microparticles were selected as primary carriers in multi-stage devices, with targets including vascular endothelia at pathological lesions. The objective of this study was to evaluate biocompatibility of mesoporous silicon microparticles with endothelial cells using in vitro assays with an emphasis on microparticle compatibility with mitotic events. We observed that vascular endothelial cells, following internalization of silicon microparticles, maintain cellular integrity, as demonstrated by cellular morphology, viability and intact mitotic trafficking of vesicles bearing silicon microparticles. The presence of gold or iron oxide nanoparticles within the porous matrix did not alter the cellular uptake of particles or the viability of endothelial cells subsequent to engulfment of microparticles. Endothelial cells maintained basal levels of IL-6 and IL-8 release in the presence of silicon microparticles. This is the first study that demonstrates polarized, ordered partitioning of endosomes based on tracking microparticles. The finding that mitotic sorting of endosomes is unencumbered by the presence of nanoporous silicon microparticles advocates the use of silicon microparticles for biomedical applications. PMID:20644846

Dip-coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Gutter, C. D.; Schuldt, S. B.

1977-01-01

The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. The past quarter demonstrated significant progress in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L sub n from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which we believe to be due to an unidentified source of impurities.

Lewis-Base-Mediated Diastereoselective Silylations of Alcohols: Synthesis of Silicon-Stereogenic Dialkoxysilanes Controlled by Chiral Aryl BINMOLs.

PubMed

Bai, Xing-Feng; Zou, Jin-Feng; Chen, Mu-Yi; Xu, Zheng; Li, Li; Cui, Yu-Ming; Zheng, Zhan-Jiang; Xu, Li-Wen

2017-07-18

In the past years, stereoselective functionalizations of hydroxyl groups of alcohol substrates with chlorosilanes leading to silyl ether formation have evolved from a functional-group protection to an enantioselective synthetic strategy. This work comprises a controlled desymmetrization of dichlorosilanes by using a family of structurally specific chiral diols, chiral 1,1'-binaphthalene-2-α-arylmethanol-2'-ol (Ar-BINMOL). This process led to the facile construction of silicon-stereogenic organosilicon compounds with high yields and good diastereoselectivities. In addition, the diasteroselective silylation of chiral diols might not only be of interest for the development of highly stereoselective nucleophilic silylation, but also shed light on the construction of novel chiral phosphine ligands bearing a silicon-stereogenic center. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Pentosanpolysulfate coating of silicone reduces encrustation.

PubMed

Zupkas, P; Parsons, C L; Percival, C; Monga, M

2000-08-01

A significant problem associated with catheterization in the urinary tract is the encrustation of the catheter materials. One approach to reducing encrustation is to alter the surface properties of the catheters. We evaluated the effectiveness of coating with pentosanpolysulfate (PPS), a semisynthetic polysaccharide similar to heparin, in reducing encrustation and the foreign-body inflammatory response to silicone stents in the bladders of male New Zealand White rabbits. Sixteen rabbits were divided into three groups to receive placement in their bladders of uncoated (N = 7), PPS-coated (N = 7), or sham matrix-processed silicone rings (N = 2) via open cystotomy. After 50 days of maintenance on normal food and water, all rabbits were sacrificed, and the air-dried, unfixed silicone ring surfaces were examined by scanning electron microscopy. Bladders and remaining silicone rings were removed and preserved separately. Silicone rings, cleaned of all encrustation, were stained with toluidene blue to determine the presence or absence of PPS coating on the surface. Histologic examination revealed normal tissue in bladder sections exposed to coated silicone rings and an inflammatory response in sections from bladders having uncoated silicone rings. Coating with PPS was associated with an eightfold reduction in the amount of encrustation of silicone and a marked reduction in the inflammatory response of the bladder wall to the foreign body. A PPS coating may be useful in reducing the encrustation of long-term indwelling silicone stents or catheters in the human urinary tract.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Silicon micromachined vibrating gyroscopes

NASA Astrophysics Data System (ADS)

Voss, Ralf

1997-09-01

This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

Mode-converting coupler for silicon-on-sapphire devices

NASA Astrophysics Data System (ADS)

Zlatanovic, S.; Offord, B. W.; Owen, M.; Shimabukuro, R.; Jacobs, E. W.

2015-02-01

Silicon-on-sapphire devices are attractive for the mid-infrared optical applications up to 5 microns due to the low loss of both silicon and sapphire in this wavelength band. Designing efficient couplers for silicon-on-sapphire devices presents a challenge due to a highly confined mode in silicon and large values of refractive index of both silicon and sapphire. Here, we present design, fabrication, and measurements of a mode-converting coupler for silicon-on-sapphire waveguides. We utilize a mode converter layout that consists of a large waveguide that is overlays a silicon inverse tapered waveguide. While this geometry was previously utilized for silicon-on-oxide devices, the novelty is in using materials that are compatible with the silicon-on-sapphire platform. In the current coupler the overlaying waveguide is made of silicon nitride. Silicon nitride is the material of choice because of the large index of refraction and low absorption from near-infrared to mid-infrared. The couplers were fabricated using a 0.25 micron silicon-on-sapphire process. The measured coupling loss from tapered lensed silica fibers to the silicon was 4.8dB/coupler. We will describe some challenges in fabrication process and discuss ways to overcome them.

Method for processing silicon solar cells

DOEpatents

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Method for processing silicon solar cells

DOEpatents

Tsuo, Y. Simon; Landry, Marc D.; Pitts, John R.

1997-01-01

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

Transmutation doping of silicon solar cells

NASA Technical Reports Server (NTRS)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Anisotropic Tribological Properties of Silicon Carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

Silicon on insulator self-aligned transistors

DOEpatents

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

Creep analysis of silicone for podiatry applications.

PubMed

Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

2016-10-01

This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

Three dimensional amorphous silicon/microcrystalline silicon solar cells

DOEpatents

Kaschmitter, James L.

1996-01-01

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

Three dimensional amorphous silicon/microcrystalline silicon solar cells

DOEpatents

Kaschmitter, J.L.

1996-07-23

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Computational and Physical Analysis of Catalytic Compounds

NASA Astrophysics Data System (ADS)

Wu, Richard; Sohn, Jung Jae; Kyung, Richard

2015-03-01

Nanoparticles exhibit unique physical and chemical properties depending on their geometrical properties. For this reason, synthesis of nanoparticles with controlled shape and size is important to use their unique properties. Catalyst supports are usually made of high-surface-area porous oxides or carbon nanomaterials. These support materials stabilize metal catalysts against sintering at high reaction temperatures. Many studies have demonstrated large enhancements of catalytic behavior due to the role of the oxide-metal interface. In this paper, the catalyzing ability of supported nano metal oxides, such as silicon oxide and titanium oxide compounds as catalysts have been analyzed using computational chemistry method. Computational programs such as Gamess and Chemcraft has been used in an effort to compute the efficiencies of catalytic compounds, and bonding energy changes during the optimization convergence. The result illustrates how the metal oxides stabilize and the steps that it takes. The graph of the energy computation step(N) versus energy(kcal/mol) curve shows that the energy of the titania converges faster at the 7th iteration calculation, whereas the silica converges at the 9th iteration calculation.

Electrolytic photodissociation of chemical compounds by iron oxide photochemical diodes

DOEpatents

Somorjai, Gabor A.; Leygraf, Christofer H.

1985-01-01

Chemical compounds can be dissociated by contacting the same with a p/n type semi-conductor photochemical diode having visible light as its sole source of energy. The photochemical diode consists of low cost, readily available materials, specifically polycrystalline iron oxide doped with silicon in the case of the n-type semi-conductor electrode, and polycrystalline iron oxide doped with magnesium in the case of the p-type electrode. So long as the light source has an energy greater than 2.2 electron volts, no added energy source is needed to achieve dissociation.

Confined in-fiber solidification and structural control of silicon and silicon-germanium microparticles.

PubMed

Gumennik, Alexander; Levy, Etgar C; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-07-11

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon-germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon-germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

1999-01-01

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

NASA Astrophysics Data System (ADS)

Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

2018-05-01

The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide

NASA Astrophysics Data System (ADS)

Ivanova, E. V.; Dementev, P. A.; Sitnikova, A. A.; Aleksandrov, O. V.; Zamoryanskaya, M. V.

2018-07-01

A method for the growth of nanocomposite layers in stoichiometric amorphous silicon dioxide is proposed. It is shown that, after annealing at a temperature of 1150°C in nitrogen atmosphere, a layer containing silicon nanoclusters is formed. Silicon nanoclusters have a crystal structure and a size of 3-6 nm. In a film grown on a n-type substrate, a layer of silicon nanoclusters with a thickness of about 10 nm is observed. In the case of a film grown on a p-type substrate, a nanocomposite layer with a thickness of about 100 nm is observed. The difference in the formation of a nanocomposite layer in films on various substrates is associated with the doping of silicon dioxide with impurities from the substrate during the growth of the film. The formation of the nanocomposite layer was confirmed by transmission electron microscopy, XPS and local cathodoluminescence studies.

Dynamic Silicon Nanophotonics

DTIC Science & Technology

2013-07-31

sensitive to fabrication imperfections and small temperature changes, therefore they are challenging to integrate into high yield mass production ... Cocoa Beach, Florida, September 2012. 15. Ali Wanis Elshaari, “Photon Manipulation in Silicon Nanophotonic Circuits,” Ph.D. Dissertation, Rochester...1.5-micron Light using Silicon Nanocrystals,” 2012 IEEE Avionics, Fiber Optics and Photonics Conference (AVFOP 2012), ThB3, Cocoa Beach, Florida

Chemical effect on diffusion in intermetallic compounds

NASA Astrophysics Data System (ADS)

Chen, Yi-Ting

With the trend of big data and the Internet of things, we live in a world full of personal electronic devices and small electronic devices. In order to make the devices more powerful, advanced electronic packaging such as wafer level packaging or 3D IC packaging play an important role. Furthermore, ?-bumps, which connect silicon dies together with dimension less than 10 ?m, are crucial parts in advanced packaging. Owing to the dimension of ?-bumps, they transform into intermetallic compound from tin based solder after the liquid state bonding process. Moreover, many new reliability issues will occur in electronic packaging when the bonding materials change; in this case, we no longer have tin based solder joint, instead, we have intermetallic compound ?-bumps. Most of the potential reliability issues in intermetallic compounds are caused by the chemical reactions driven by atomic diffusion in the material; thus, to know the diffusivities of atoms inside a material is significant and can help us to further analyze the reliability issues. However, we are lacking these kinds of data in intermetallic compound because there are some problems if used traditional Darken's analysis. Therefore, we considered Wagner diffusivity in our system to solve the problems and applied the concept of chemical effect on diffusion by taking the advantage that large amount of energy will release when compounds formed. Moreover, by inventing the holes markers made by Focus ion beam (FIB), we can conduct the diffusion experiment and obtain the tracer diffusivities of atoms inside the intermetallic compound. We applied the technique on Ni3Sn4 and Cu3Sn, which are two of the most common materials in electronic packaging, and the tracer diffusivities are measured under several different temperatures; moreover, microstructure of the intermetallic compounds are investigated to ensure the diffusion environment. Additionally, the detail diffusion mechanism was also discussed in aspect of diffusion

Preventing Freezeup in Silicon Ribbon Growth

NASA Technical Reports Server (NTRS)

Mackintosh, B.

1983-01-01

Carefully-shaped heat conductor helps control thermal gradients crucial to growth of single-crystal silicon sheets for solar cells. Ends of die through which silicon sheet is drawn as ribbon from molten silicon. Profiled heat extractor prevents ribbon ends from solidifying prematurely and breaking.

Elemental and compound semiconductor surface chemistry: Intelligent interfacial design facilitated through novel functionalization and deposition strategies

NASA Astrophysics Data System (ADS)

Porter, Lon Alan, Jr.

The fundamental understanding of silicon surface chemistry is an essential tool for silicon's continued dominance of the semiconductor industry in the years to come. By tapping into the vast library of organic functionalities, the synthesis of organic monolayers may be utilized to prepare interfaces, tailored to a myriad of applications ranging from silicon VLSI device optimization and MEMS to physiological implants and chemical sensors. Efforts in our lab to form stable organic monolayers on porous silicon through direct silicon-carbon linkages have resulted in several efficient functionalization methods. In the first chapter of this thesis a comprehensive review of these methods, and many others is presented. The following chapter and the appendix serve to demonstrate both potential applications and studies aimed at developing a fundamental understanding of the chemistry behind the organic functionalization of silicon surfaces. The remainder of this thesis attempts to demonstrate new methods of metal deposition onto both elemental and compound semiconductor surfaces. Currently, there is considerable interest in producing patterned metallic structures with reduced dimensions for use in technologies such as ULSI device fabrication, MEMS, and arrayed nanosensors, without sacrificing throughput or cost effectiveness. Research in our laboratory has focused on the preparation of precious metal thin films on semiconductor substrates via electroless deposition. Continuous metallic films form spontaneously under ambient conditions, in the absence of a fluoride source or an externally applied current. In order to apply this metallization method toward the development of useful technologies, patterning utilizing photolithography, microcontact printing, and scanning probe nanolithography has been demonstrated.

Desorption of biocides from renders modified with acrylate and silicone.

PubMed

Styszko, Katarzyna; Bollmann, Ulla E; Wangler, Timothy P; Bester, Kai

2014-01-01

Biocides are used in the building industry to prevent algal, bacterial and fungal growth on polymericrenders and thus to protect buildings. However, these biocides are leached into the environment. To better understand this leaching, the sorption/desorption of biocides in polymeric renders was assessed. In this study the desorption constants of cybutryn, carbendazim, iodocarb, isoproturon, diuron, dichloro-N-octylisothiazolinone and tebuconazole towards acrylate and silicone based renders were assessed at different pH values. At pH 9.5 (porewater) the constants for an acrylate based render varied between 8 (isoproturon) and 9634 (iodocarb) and 3750 (dichloro-N-octylisothiazolinone), respectively. The values changed drastically with pH value. The results for the silicone based renders were in a similar range and usually the compounds with high sorption constants for one polymer also had high values for the other polymer. Comparison of the octanol water partitioning constants (Kow) with the render/water partitioning constants (Kd) revealed similarities, but no strong correlation. Adding higher amounts of polymer to the render material changed the equilibria for dichloro-N-octylisothiazolinone, tebuconazole, cybutryn, carbendazim but not for isoproturon and diuron. Copyright © 2013 Elsevier Ltd. All rights reserved.

Method for fracturing silicon-carbide coatings on nuclear-fuel particles

DOEpatents

Turner, Lloyd J.; Willey, Melvin G.; Tiegs, Sue M.; Van Cleve, Jr., John E.

1982-01-01

This invention is a device for fracturing particles. It is designed especially for use in "hot cells" designed for the handling of radioactive materials. In a typical application, the device is used to fracture a hard silicon-carbide coating present on carbon-matrix microspheres containing nuclear-fuel material, such as uranium or thorium compounds. To promote remote control and facilitate maintenance, the particle breaker is pneumatically operated and contains no moving parts. It includes means for serially entraining the entrained particles on an anvil housed in a leak-tight chamber. The flow rate of the gas is at a value effecting fracture of the particles; preferably, it is at a value fracturing them into product particulates of fluidizable size. The chamber is provided with an outlet passage whose cross-sectional area decreases in the direction away from the chamber. The outlet is connected tangentially to a vertically oriented vortex-flow separator for recovering the product particulates entrained in the gas outflow from the chamber. The invention can be used on a batch or continuous basis to fracture the silicon-carbide coatings on virtually all of the particles fed thereto.

Device for fracturing silicon-carbide coatings on nuclear-fuel particles

DOEpatents

Turner, L.J.; Willey, M.G.; Tiegs, S.M.; Van Cleve, J.E. Jr.

This invention is a device for fracturing particles. It is designed especially for use in hot cells designed for the handling of radioactive materials. In a typical application, the device is used to fracture a hard silicon-carbide coating present on carbon-matrix microspheres containing nuclear-fuel materials, such as uranium or thorium compounds. To promote remote control and facilitate maintenance, the particle breaker is pneumatically operated and contains no moving parts. It includes means for serially entraining the entrained particles on an anvil housed in a leak-tight chamber. The flow rate of the gas is at a value effecting fracture of the particles; preferably, it is at a value fracturing them into product particulates of fluidizable size. The chamber is provided with an outlet passage whose cross-sectional area decreases in the direction away from the chamber. The outlet is connected tangentially to a vertically oriented vortex-flow separator for recovering the product particulates entrained in the gas outflow from the chamber. The invention can be used on a batch or continuous basis to fracture the silicon-carbide coatings on virtually all of the particles fed thereto.

Silicon: Child and Progenitor of Revolution

NASA Astrophysics Data System (ADS)

Cahn, R. W.

Antoine Lavoisier, the pioneering French chemist who (together with Joseph Priestley in England) identified oxygen as an element and gave it its name, in 1789 concluded that quartz was probably a compound with an as-yet undiscovered but presumably extremely common element. That was also the year in which the French Revolution broke out. Five years later, the Jacobins accused Lavoisier of offences against the people and cut off his head, thereby nearly cutting off the new chemistry. It was not until 1824 that Jöns Berzelius in Sweden succeeded in confirming Lavoisier's speculation by isolating silicon. Argument at once broke out among the scientific elite as to whether the newly found element was a metal or an insulator. It took more than a century to settle that disagreement decisively: As so often, when all-or-nothing alternatives are fiercely argued, the truth turned out to be neither all nor nothing.

Silicon nitride sintered body

NASA Technical Reports Server (NTRS)

Suzuki, K.; Shinohara, N.

1984-01-01

The sintering of silicon carbide and it production are described. The method of production is by calcination in which molding is followed by sintering without compression. The invention improves the composition of the silicon carbide ceramic. Six examples of the invention are illustrated and discussed.

Silicon carbide ceramic production

NASA Technical Reports Server (NTRS)

Suzuki, K.; Shinohara, N.

1984-01-01

A method to produce sintered silicon carbide ceramics in which powdery carbonaceous components with a dispersant are mixed with silicon carbide powder, shaped as required with or without drying, and fired in nonoxidation atmosphere is described. Carbon black is used as the carbonaceous component.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

PubMed

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Studies of SERS efficiency of gold coated porous silicon formed on rough silicon backside

NASA Astrophysics Data System (ADS)

Dridi, H.; Haji, L.; Moadhen, A.

2017-12-01

Starting from a rough backside of silicon wafer, we have formed a porous layer by electrochemical anodization and then coated by a thin film of gold. The morphological characteristics of the porous silicon and in turn the metal film are governed by the anodization process and also by the starting surface. So, in order to investigate the Plasmonic aspect of such rough surface which combines roughness inherent to the porous nature and that due to rough starting surface, we have used a dye target molecule to study its SERS signal using a porous silicon layer obtained on the rough backside surface. The use of unusual backside of silicon wafer could be, beside the others, an interesting way to made SERS effective substrate thanks to reproducible rough porous gold on porous layer from this starting face. The morphological results correspond to the silicon rough surface as a function of the crystallographic orientation showed the presence of two different substrate structure. The optical reflectivity results obtained of gold deposited on oxidized porous silicon showed a dependence of its Localized Surface Plasmon band frequency of the deposit time. SERS results, obtained for a dye target molecule (Rhodamine 6G), show a higher intensities in the case of the 〈110〉 orientation, which characterized by the higher roughness surface. Voici "the most relevant and important aspects of our work".

Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon-hydrogen bonding on silicon nanocrystal surface under illumination

NASA Astrophysics Data System (ADS)

Kim, Ka-Hyun; Johnson, Erik V.; Cabarrocas, Pere Roca i.

2016-07-01

Hydrogenated polymorphous silicon (pm-Si:H) is a material consisting of a small volume fraction of nanocrystals embedded in an amorphous matrix. pm-Si:H solar cells demonstrate interesting initial degradation behaviors such as rapid initial change in photovoltaic parameters and self-healing after degradation during light-soaking. The precise dynamics of the light-induced degradation was studied in a series of light-soaking experiments under various illumination conditions such as AM1.5G and filtered 570 nm yellow light. Hydrogen effusion experiment before and after light-soaking further revealed that the initial degradation of pm-Si:H solar cells originate from the modification of silicon-hydrogen bonding on the surface of silicon nanocrystals in pm-Si:H.

Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix

NASA Astrophysics Data System (ADS)

Coscia, U.; Ambrosone, G.; Basa, D. K.

2008-03-01

The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity.

Millimeter-wave silicon-based ultra-wideband automotive radar transceivers

NASA Astrophysics Data System (ADS)

Jain, Vipul

Since the invention of the integrated circuit, the semiconductor industry has revolutionized the world in ways no one had ever anticipated. With the advent of silicon technologies, consumer electronics became light-weight and affordable and paved the way for an Information-Communication-Entertainment age. While silicon almost completely replaced compound semiconductors from these markets, it has been unable to compete in areas with more stringent requirements due to technology limitations. One of these areas is automotive radar sensors, which will enable next-generation collision-warning systems in automobiles. A low-cost implementation is absolutely essential for widespread use of these systems, which leads us to the subject of this dissertation---silicon-based solutions for automotive radars. This dissertation presents architectures and design techniques for mm-wave automotive radar transceivers. Several fully-integrated transceivers and receivers operating at 22-29 GHz and 77-81 GHz are demonstrated in both CMOS and SiGe BiCMOS technologies. Excellent performance is achieved indicating the suitability of silicon technologies for automotive radar sensors. The first CMOS 22-29-GHz pulse-radar receiver front-end for ultra-wideband radars is presented. The chip includes a low noise amplifier, I/Q mixers, quadrature voltage-controlled oscillators, pulse formers and variable-gain amplifiers. Fabricated in 0.18-mum CMOS, the receiver achieves a conversion gain of 35-38.1 dB and a noise figure of 5.5-7.4 dB. Integration of multi-mode multi-band transceivers on a single chip will enable next-generation low-cost automotive radar sensors. Two highly-integrated silicon ICs are designed in a 0.18-mum BiCMOS technology. These designs are also the first reported demonstrations of mm-wave circuits with high-speed digital circuits on the same chip. The first mm-wave dual-band frequency synthesizer and transceiver, operating in the 24-GHz and 77-GHz bands, are demonstrated. All

Hybrid III-V/silicon lasers

NASA Astrophysics Data System (ADS)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

PubMed

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Antifuse with a single silicon-rich silicon nitride insulating layer

DOEpatents

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

Study of properties of modified silicones at solid-liquid interface: fabric-silicone interactions.

PubMed

Purohit, P; Somasundaran, P; Kulkarni, R

2006-06-15

Silicones are special reagents that impart desired surface properties such as softness, bounciness and antiwrinkle properties to fabrics and related materials. Although these finishing processes have been practiced routinely, very little is known about the mechanisms involved in modification so that they could be improved. The current study was undertaken to develop basic understanding of the mechanisms responsible for surface modification of fibers using silicones. PDMS based amino silicone emulsions, quaternized to various degrees using dimethyl sulphate, were used in the present study. The electrokinetic properties of the modified silicones were studied as a function of pH. It was expected that the silicone emulsions would show a steady positive zeta potential throughout the pH range due to the quaternization by dimethyl sulphate. Surprisingly, a sudden drop in the zeta potential was observed around pH 8 with the samples turning hazy in the pH range of 8-10. Turbidimetric studies also showed a sudden increase in the turbidity in the pH range 8-10 where commercial processes also encounter problems. It was concluded that the emulsions were destabilized at pH 8-10 thus rendering them ineffective for surface treatment. In order to identify reason for the improvement in fabric properties, fiber structure was monitored using atomic force microscopy. It was observed that the treated fibers were far smoother, relaxed and uniform as compared to the untreated fibers. Thus the morphology of the fabric is modified in a specific way by treatment with specialty silicones.

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

EDITORIAL: Special issue on silicon photonics

NASA Astrophysics Data System (ADS)

Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

2008-06-01

The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

Silicon carbide fibers and articles including same

DOEpatents

Garnier, John E; Griffith, George W

2015-01-27

Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Intermediate Bandgap Solar Cells From Nanostructured Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Marcie

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Process of preparing tritiated porous silicon

DOEpatents

Tam, Shiu-Wing

1997-01-01

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

Sources and transport of silicone NVR

NASA Technical Reports Server (NTRS)

Harvey, Gale A.

1992-01-01

The retrieved LDEF had varying amounts of visible contamination films (brown stains) at many locations. FTIR spectra of heavy film deposits at vents and of optical windows from tray E5 indicated methyl silicone and silica in the contaminant films. Two possible sources of the methyl silicone are DC-710 phenyl methyl silicone in the shuttle-bay-liner beta cloth, and the shuttle tile waterproofing silane. It is concluded that much of the silicon and silica contamination came from ground operations and the orbiter.

Core-based intrinsic fiber-optic absorption sensor for the detection of volatile organic compounds

NASA Astrophysics Data System (ADS)

Klunder, Gregory L.; Russo, Richard E.

1995-03-01

A core-based intrinsic fiber-optic absorption sensor has been developed and tested for the detection of volatile organic compounds. The distal ends of transmitting and receiving fibers are connected by a small cylindrical section of an optically clear silicone rubber. The silicone rubber acts both as a light pipe and as a selective membrane into which the analyte molecules can diffuse. The sensor has been used to detect volatile organics (trichloroethylene, 1,1-dichloroethylene, and benzene) in both aqueous solutions and in the vapor phase or headspace. Absorption spectra obtained in the near-infrared (near-IR) provide qualitative and quantitative information about the analyte. Water, which has strong broad-band absorption in the near-IR, is excluded from the spectra because of the hydrophobic properties of the silicone rubber. The rate-limiting step is shown to be the diffusion through the Nernstian boundary layer surrounding the sensor and not the diffusion through the silicone polymer. The rate of analyte diffusion into the sensor, as measured by the t(sub 90) values (the time required for the sensor to reach 90% of the equilibrium value), is 30 min for measurements in aqueous solutions and approximately 3 min for measurements made in the headspace. The limit of detection obtained with this sensor is approximately 1.1 ppm for trichloroethylene in an aqueous solution.

Silicon photonics and challenges for fabrication

NASA Astrophysics Data System (ADS)

Feilchenfeld, N. B.; Nummy, K.; Barwicz, T.; Gill, D.; Kiewra, E.; Leidy, R.; Orcutt, J. S.; Rosenberg, J.; Stricker, A. D.; Whiting, C.; Ayala, J.; Cucci, B.; Dang, D.; Doan, T.; Ghosal, M.; Khater, M.; McLean, K.; Porth, B.; Sowinski, Z.; Willets, C.; Xiong, C.; Yu, C.; Yum, S.; Giewont, K.; Green, W. M. J.

2017-03-01

Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.

Silicone oil migration into the orbit.

PubMed

Ali Bautista, Sana; Wladis, Edward J; Farber, Martha; Falk, Naomi S; Phelps, Paul O

2018-01-04

To report a case in of intravitreal silicone oil migration into the inferior orbit. Silicone oil tamponade is commonly used in retinal detachment repair and extrusion into the orbital tissues is very rare. A 70-year-old male with a remote history of repair of a right ruptured globe and retinal detachment surgery presented with progressive right lower eyelid edema. There was a known history of intravitreal silicone oil instillation and removal. An elective right inferior orbitotomy with excisional biopsy was performed. Histopathology confirmed the presence of silicone oil intermixed with necrotic fat. The patient had excellent cosmetic and functional outcome. The presence of silicone oil within the orbital fat may be a result of increased intraocular pressure and extrusion through presumably water-tight sclerotomy sites.

Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

NASA Astrophysics Data System (ADS)

Fonseca, Luis; Santos, Jose-Domingo; Roncaglia, Alberto; Narducci, Dario; Calaza, Carlos; Salleras, Marc; Donmez, Inci; Tarancon, Albert; Morata, Alex; Gadea, Gerard; Belsito, Luca; Zulian, Laura

2016-08-01

Micro and nanotechnologies are called to play a key role in the fabrication of small and low cost sensors with excellent performance enabling new continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). Harvesting devices providing energy autonomy to those large numbers of microsensors will be essential. In those scenarios where waste heat sources are present, thermoelectricity will be the obvious choice. However, miniaturization of state of the art thermoelectric modules is not easy with the current technologies used for their fabrication. Micro and nanotechnologies offer an interesting alternative considering that silicon in nanowire form is a material with a promising thermoelectric figure of merit. This paper presents two approaches for the integration of large numbers of silicon nanowires in a cost-effective and practical way using only micromachining and thin-film processes compatible with silicon technologies. Both approaches lead to automated physical and electrical integration of medium-high density stacked arrays of crystalline or polycrystalline silicon nanowires with arbitrary length (tens to hundreds microns) and diameters below 100 nm.

Hot Electron Injection into Uniaxially Strained Silicon

NASA Astrophysics Data System (ADS)

Kim, Hyun Soo

In semiconductor spintronics, silicon attracts great attention due to the long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process of diamond crystal structure such as silicon is dominant by Elliot-Yafet mechanism. Yafet shows that intravalley scattering process is dominant. The conduction electron spin lifetime measured by electron spin resonance measurement and electronic measurement using ballistic hot electron method well agrees with Yafet's theory. However, the recent theory predicts a strong contribution of intervalley scattering process such as f-process in silicon. The conduction band minimum is close the Brillouin zone edge, X point which causes strong spin mixing at the conduction band. A recent experiment of electric field-induced hot electron spin relaxation also shows the strong effect of f-process in silicon. In uniaxially strained silicon along crystal axis [100], the suppression of f-process is predicted which leads to enhance electron spin lifetime. By inducing a change in crystal structure due to uniaxial strain, the six fold degeneracy becomes two fold degeneracy, which is valley splitting. As the valley splitting increases, intervalley scattering is reduced. A recent theory predicts 4 times longer electron spin lifetime in 0.5% uniaxially strained silicon. In this thesis, we demonstrate ballistic hot electron injection into silicon under various uniaxial strain. Spin polarized hot electron injection under strain is experimentally one of the most challenging part to measure conduction electron spin lifetime in silicon. Hot electron injection adopts tunnel junction which is a thin oxide layer between two conducting materials. Tunnel barrier, which is an oxide layer, is only 4 ˜ 5 nm thick. Also, two conducting materials are only tens of nanometer. Therefore, under high pressure to apply 0.5% strain on silicon, thin films on silicon substrate can be easily

Rough SERS substrate based on gold coated porous silicon layer prepared on the silicon backside surface

NASA Astrophysics Data System (ADS)

Dridi, H.; Haji, L.; Moadhen, A.

2017-04-01

We report in this paper a novel method to elaborate rough Surface Enhanced Raman Scattering (SERS) substrate. A single layer of porous silicon was formed on the silicon backside surface. Morphological characteristics of the porous silicon layer before and after gold deposition were influenced by the rough character (gold size). The reflectance measurements showed a dependence of the gold nano-grains size on the surface nature, through the Localized Surface Plasmon (LSP) band properties. SERS signal of Rhodamine 6G used as a model analyte, adsorbed on the rough porous silicon layer revealed a marked enhancement of its vibrational modes intensities.

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

NASA Astrophysics Data System (ADS)

Ahmad, I.; Temple, M. P.; Kallis, A.; Wojdak, M.; Oton, C. J.; Barbier, D.; Saleh, H.; Kenyon, A. J.; Loh, W. H.

2008-12-01

Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.

Dry etch method for texturing silicon and device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gershon, Talia S.; Haight, Richard A.; Kim, Jeehwan

2017-07-25

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

Choosing a Silicone Encapsulant for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Velderrain, Michelle

2011-12-01

Growth in the solar industry has resulted in newer technologies, specifically concentrator photovoltaic (CPV) modules, to explore using new types of materials such as silicone encapsulants. CPV and LCPV module designs are to achieve the most efficient energy conversion possible however it is equally important to demonstrate long term reliability. Silicone is a material of interest due to its thermal stability and ability to absorb stresses incurred during thermal cycling. The refractive index of clear silicone adhesives is advantageous because it can be optimized using phenyl groups to match BK7 glass and other substrates to minimize light loss at the interfaces but it is relatively unknown how the optical properties change over time possibly yellowing in such a harsh environment. A 1.41 silicone encapsulant is compared to a 1.52 refractive index silicone. Optical Absorption (300 nm-1300 nm), Water Vapor Permeability, Moisture Absorption and effects of oxidation at elevated temperatures will be compared of these materials to aid the engineer in choosing a silicone for their CPV application. Non-phenyl containing 1.41 RI silicones have been used for several years for bonding solar arrays in the satellite industry. Phenyl groups on the siloxane polymer can change various properties of the silicone. Understanding how phenyl affects these properties allows the engineer to understand the benefits and risks when using a RI matching silicone to minimize light loss versus a non-phenyl containing silicone.

Silicon Micromachined Microlens Array for THz Antennas

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

2013-01-01

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1991-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

DOEpatents

Tiegs, T.N.; Lindemer, T.B.

1991-02-19

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, P.E.D.; Pugar, E.A.

1985-11-12

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, Peter E. D.; Pugar, Eloise A.

1985-01-01

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

Femtosecond laser fabricating black silicon in alkaline solution

NASA Astrophysics Data System (ADS)

Meng, Jiao; Song, Haiying; Li, Xiaoli; Liu, Shibing

2015-03-01

An efficient approach for enhancing the surface antireflection is proposed, in which a black silicon is fabricated by a femtosecond laser in alkaline solution. In the experiment, 2 wt% NaOH solution is formulated at room temperature (22 ± 1 °C). Then, a polished silicon is scanned via femtosecond laser irradiation in 2 wt% NaOH solution. Jungle-like microstructures on the black silicon surface are characterized using an atomic force microscopy. The reflectance of the black silicon is measured at the wavelengths ranging from 400 to 750 nm. Compared to the polished silicon, the black silicon can significantly suppress the optical reflection throughout the visible region (<5 %). Meanwhile, we also investigated the factors of the black silicon, including the femtosecond laser pulse energy and the scanning speed. This method is simple and effective to acquire the black silicon, which probably has a large advantage in fast and cost-effective black silicon fabrication.

Porous silicon-based direct hydrogen sulphide fuel cells.

PubMed

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

Porous silicon nanocrystals in a silica aerogel matrix

PubMed Central

2012-01-01

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation. PMID:22805684

Porous silicon nanocrystals in a silica aerogel matrix.

PubMed

Amonkosolpan, Jamaree; Wolverson, Daniel; Goller, Bernhard; Polisski, Sergej; Kovalev, Dmitry; Rollings, Matthew; Grogan, Michael D W; Birks, Timothy A

2012-07-17

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation.

Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shuleiko, D. V., E-mail: shuleyko.dmitriy@physics.msu.ru; Zabotnov, S. V.; Zhigunov, D. M.

2017-02-15

The photoluminescence properties of silicon nitride and oxide superlattices fabricated by plasmaenhanced chemical vapor deposition are studied. In the structures annealed at a temperature of 1150°C, photoluminescence peaks at about 1.45 eV are recorded. The peaks are defined by exciton recombination in silicon nanocrystals formed upon annealing. Along with the 1.45-eV peaks, a number of peaks defined by recombination at defects at the interface between the nanocrystals and silicon-nitride matrix are detected. The structures annealed at 900°C exhibit a number of photoluminescence peaks in the range 1.3–2.0 eV. These peaks are defined by both the recombination at defects and excitonmore » recombination in amorphous silicon nanoclusters formed at an annealing temperature of 900°C. The observed features of all of the photoluminescence spectra are confirmed by the nature of the photoluminescence kinetics.« less

Morphological Characterization of Silicone Hydrogels

NASA Astrophysics Data System (ADS)

Gido, Samuel

2007-03-01

Silicone hydrogel materials are used in the latest generation of extended wear soft contact lenses. To ensure comfort and eye health, these materials must simultaneously exhibit high oxygen permeability and high water permeability / hydrophilicity. The materials achieve these opposing requirements based on bicontinuous composite of nanoscale domains of oxygen permeable (silicones) and hydrophilic (water soluble polymer) materials. The microphase separated morphology of silicone hydrogel contact lens materials was imaged using field emission gun scanning transmission electron microscopy (FEGSTEM), and atomic force microscopy (AFM). Additional morphological information was provided by small angle X-ray scattering (SAXS). These results all indicate a nanophase separated structure of silicone rich (oxygen permeable) and carbon rich (water soluble polymer) domains separated on a length scale of about 10 nm.

Process of preparing tritiated porous silicon

DOEpatents

Tam, S.W.

1997-02-18

A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Silicon production in a fluidized bed reactor

NASA Technical Reports Server (NTRS)

Rohatgi, N. K.

1986-01-01

Part of the development effort of the JPL in-house technology involved in the Flat-Plate Solar Array (FSA) Project was the investigation of a low-cost process to produce semiconductor-grade silicon for terrestrial photovoltaic cell applications. The process selected was based on pyrolysis of silane in a fluidized-bed reactor (FBR). Following initial investigations involving 1- and 2-in. diameter reactors, a 6-in. diameter, engineering-scale FBR was constructed to establish reactor performance, mechanism of silicon deposition, product morphology, and product purity. The overall mass balance for all experiments indicates that more than 90% of the total silicon fed into the reactor is deposited on silicon seed particles and the remaining 10% becomes elutriated fines. Silicon production rates were demonstrated of 1.5 kg/h at 30% silane concentration and 3.5 kg/h at 80% silane concentration. The mechanism of silicon deposition is described by a six-path process: heterogeneous deposition, homogeneous decomposition, coalescence, coagulation, scavenging, and heterogeneous growth on fines. The bulk of the growth silicon layer appears to be made up of small diameter particles. This product morphology lends support to the concept of the scavenging of homogeneously nucleated silicon.

1D silicon refractive lenses for surface scattering with high energy x-rays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bertram, F.; Gutowski, O.; Schroer, C.

2016-07-27

At the high energy X-ray beamline P07 at PETRA III, 1D focusing down to 4 micrometer vertical beam height while preserving a horizontal beam width of 0.5 mm was established by refractive lenses etched into a silicon wafer. A single wafer with 8 different lens structures can cover the full energy range between 50 and 120 keV. For surface diffraction on ultrathin films a factor of 4 in intensity can be achieved compared to the already established Al-compound refractive 2D-lenses.

Fabricating solar cells with silicon nanoparticles

DOEpatents

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

The effect of axial ligands on the quantum yield of singlet oxygen of new silicon phthalocyanine

NASA Astrophysics Data System (ADS)

Lv, Huafei; Zhang, Xuemei; Yu, Xinxin; Pan, Sujuan; Xie, Shusen; Yang, Hongqin; Peng, Yiru

2016-10-01

The singlet oxygen (1O2) production abilitity is an important factor to assess their potential as effective of photosensitizers. In this paper, the 1O2 production rate, production rate constant and quantum yield of silicon(IV) phthalocyanine axially bearing 1-3 generation dendritic substituents were evaluated by a high performance liquid chromatographic method. The results show that the 1O2 production rate and production rate constant of these compounds increase gradually with dendritic generations increase. And the 1O2 quantum yield of silicon(IV) phthalocyanine with first generation dendritic ligand was the highest. This may be due to the isolation effect of the dendritic ligands on the phthalocyanine core. The parameters of the observed 1O2 production properties will provide valuable data for these dendrimer phthalocyanines as promising photosensitizer in PDT application.

Tandem junction amorphous silicon solar cells

DOEpatents

Hanak, Joseph J.

1981-01-01

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Solid-dielectric compound parabolic concentrators: on their use with photovoltaic devices.

PubMed

Goodman, N B; Ignatius, R; Wharton, L; Winston, R

1976-10-01

Prototype solid dielectric compound parabolic concentrators have been made and tested. By means of the geometry and refractive properties of a transparent solid they provide a technique for increasing the power output of silicon solar cells exposed to the sun by an amount nearly equal to the increase in effective collecting area. The response is uniform over a large angle which eliminates the necessity of diurnal tracking of the sun. The technique can be applied to the construction of thin panels and has the potential for significantly reducing, their cost per unit area.

Rapid fabrication of a silicon modification layer on silicon carbide substrate.

PubMed

Bai, Yang; Li, Longxiang; Xue, Donglin; Zhang, Xuejun

2016-08-01

We develop a kind of magnetorheological (MR) polishing fluid for the fabrication of a silicon modification layer on a silicon carbide substrate based on chemical theory and actual polishing requirements. The effect of abrasive concentration in MR polishing fluid on material removal rate and removal function shape is investigated. We conclude that material removal rate will increase and tends to peak value as the abrasive concentration increases to 0.3 vol. %, and the removal function profile will become steep, which is a disadvantage to surface frequency error removal at the same time. The removal function stability is also studied and the results show that the prepared MR polishing fluid can satisfy actual fabrication requirements. An aspheric reflective mirror of silicon carbide modified by silicon is well polished by combining magnetorheological finishing (MRF) using two types of MR polishing fluid and computer controlled optical surfacing (CCOS) processes. The surface accuracy root mean square (RMS) is improved from 0.087λ(λ=632.8  nm) initially to 0.020λ(λ=632.8  nm) in 5.5 h total and the tool marks resulting from MRF are negligible. The PSD analysis results also shows that the final surface is uniformly polished.