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Sample records for hypercoordinate silicon compounds

  1. On the nature of hypercoordination in dihalogenated perhalocyclohexasilanes.

    PubMed

    Vedha, Swaminathan Angeline; Solomon, Rajadurai Vijay; Venuvanalingam, Ponnambalam

    2013-04-25

    Hypercoordination in silicon has long been reviewed. Dihalogenated perhalocyclohexasilane inverse sandwich complexes (ISCs) are the only group of hypercoordinate Si complexes with anion donors that contact six neutral silicon atoms; opening prospective applications in Si self-assembled nanostructures. Hypercoordinate bonds in 16 such ISCs were studied and their anion ring interactions have been understood with respect to halides. μ(6) mode of coordination was confirmed by the presence of 6 equivalent (3,-1) bond critical points through Bader's QTAIM perspective. The presence of Lewis acid sites above and below the flat Si rings were examined through a reduced density gradient (RDG) analysis, and the ability of halide anions (X' = F, Cl, Br, I) to hypercoordinate has been understood. Role of the ring halides (X) in tuning size and acidity of Lewis sites has been addressed. While the total interaction between the two anions and the ring is quantified through EDA, each SiX' hypercoordinate bond was identified as either purely ionic or transient through QTAIM computations. CDA shows that these complexes are of donor-acceptor type with significant back-donation. The analysis shows that BrF' and IF' were found to reach maximum covalency within the group. Hence in future, tuning these ISCs for construction of nanocrystalline Si structures for optoelectronic properties can essentially utilize the collective, weak yet hypercoordinate Si in these complexes. PMID:23530734

  2. Compounding with Silicones.

    PubMed

    Allen, Loyd V

    2015-01-01

    Since the 1940s, methylchlorosilanes have been used to treat glassware to prevent blood from clotting. The use of silicones in pharmaceutical and medical applications has grown to where today they are used in many life-saving devices (pacemakers, hydrocephalic shunts) and pharmaceutical applications from tubing, to excipients in topical formulations, to adhesives to affix transdermal drug delivery systems, and are also being used in products as active pharmaceutical ingredients, such as antiflatulents. About 60% of today's skin-care products now contain some type of silicone where they are considered safe and are known to provide a pleasant "silky-touch," non-greasy, and non-staining feel. Silicones exhibit many useful characteristics, and the safety of these agents supports their numerous applications; their biocompatibility is partially due to their low-chemical reactivity displayed by silicones, low-surface energy, and their hydrophobicity. Silicones are used both as active ingredients and as excipients. In addition is their use for "siliconization," or surface treatment, of many parenteral packaging components. Dimethicone and silicone oil are used as lubricants on stoppers to aid machineability, in syringes to aid piston movement, or on syringe needles to reduce pain upon injection. Silicones are also useful in pharmaceutical compounding as is discussed in this artiele included with this article are in developing formulations with silicones. PMID:26714363

  3. Silicon compounds in the Jupiter atmosphere

    NASA Technical Reports Server (NTRS)

    Howland, G.; Harteck, P.; Reeves, R. R., Jr.

    1979-01-01

    The formation of colored silicon compounds under nonequilibrium conditions is discussed with reference to the composition of the Jupiter atmosphere. It is shown that many of these reactions produce strongly colored intermediates that are relatively stable and similar in appearance to those observed on Jupiter. It is suggested that the silicon compounds could substantially contribute to the colors observed on Jupiter. The colored intermediates may be the result of relatively rapid amorphous silicon monoxide formation in vertical atmospheric currents in the region near the red spot and in the red spot itself.

  4. [Biological function of some elements and their compounds. IV. Silicon, silicon acids, silicones].

    PubMed

    Puzanowska-Tarasiewicz, Helena; Kuźmicka, Ludmiła; Tarasiewicz, Mirosław

    2009-11-01

    The review is devoted for the occurance, meaning of silicon and their compounds, especially silicon acids and silicones. Silicon participates in biosynthesis of collagen, the basic component of connective tissue. It strengthens and makes the walls of blood vessels more flexible, diminishes capillaries permeability, accelerates healing processes, has a sebostatic activity, strengthens hair and nails. This element has a beneficial effect on phosphorylation of proteins saccharides, and nucleotides. It is also essential for the formation of cytoskeleton and other cellular structures of mechanical or supportive function. Silicon is an initial substrate for obtaining silicones. These are synthetic polymers, in which silicon atoms are bound by oxygen bridges. They are used in almost all kinds of products due to their most convenient physical and chemical properties: moistening and film-forming, giving liquid form increasing solubility. Silicon acids form colloid gel, silica gel, with absorptive abilities, like active carbon. PMID:19999810

  5. Compound FDTD method for silicon photonics

    NASA Astrophysics Data System (ADS)

    Olyaee, Abbas; Hamadani, Farzad T.

    2011-09-01

    Attempt to manufacture photonics devices on silicon requires theoretical and numerical prediction. This essay presents Compound FDTD (C-FDTD) method for comprehensive simulation of silicon photonics devices. Although this method is comprehensive, it maintains conventional Yee algorithm. The method involves variation of refractive index due to nonlinear effects. With the help of this simulator, refractive index change due to free-carriers created through two photon absorption and Kerr effect in silicon waveguide is considered. Results indicate how to choose pump pulse shape to optimum operation of active photonics devices. Also conductivity variation of Si waveguide due to change in free-carrier density is studied. By considering variations in conductivity profile, we are able to design better schemes for sweep free carriers away with reverse bias or nonlinear photovoltaic effect for fast devices and Raman amplifiers.

  6. Dilithium hexaorganostannate(IV) compounds.

    PubMed

    Schrader, Ireen; Zeckert, Kornelia; Zahn, Stefan

    2014-12-01

    Hypercoordination of main-group elements such as the heavier Group 14 elements (silicon, germanium, tin, and lead) usually requires strong electron-withdrawing ligands and/or donating groups. Herein, we present the synthesis and characterization of two hexaaryltin(IV) dianions in form of their dilithium salts [Li2(thf)2{Sn(2-py(Me))6}] (py(Me)=C5H3N-5-Me) (2) and [Li2{Sn(2-py(OtBu))6}] (py(OtBu)=C5H3N-6-OtBu) (3). Both complexes are stable in the solid state and solution under inert conditions. Theoretical investigations of compound 2 reveal a significant valence 5s-orbital contribution of the tin atom forming six strongly polarized tin-carbon bonds. PMID:25314245

  7. Silicones As Connector-Potting Compounds

    NASA Technical Reports Server (NTRS)

    Bouquet, Frank L.; Bickler, Marjorie S.

    1988-01-01

    Report evaluates silicone potting materials for electrical connectors. Describes tests of connector specimens made with CV-2510 and DC-6-1104 silicones with dibutyl tin dilaurate catalyst and evaluates test results in light of previously published test results for polyurethanes. Discusses requirements for connector-potting materials, methods used to evaluate silicones, techniques for preparing specimens, and results of tests. Identifies commercial sources of silicone potting materials.

  8. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    SciTech Connect

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  9. FeB6 Monolayers: The Graphene-like Material with Hypercoordinate Transition Metal.

    PubMed

    Zhang, Haijun; Li, Yafei; Hou, Jianhua; Tu, Kaixiong; Chen, Zhongfang

    2016-05-01

    By means of density functional theory (DFT) computations and global minimum search using particle-swarm optimization (PSO) method, we predicted three FeB6 monolayers, namely α-FeB6, β-FeB6 and γ-FeB6, which consist of the Fe©Bx (x = 6, 8) wheels with planar hypercoordinate Fe atoms locating at the center of six- or eight-membered boron rings. In particular, the α-FeB6 sheet constructed by Fe©B8 motifs is the global minimum due to completely shared and well delocalized electrons. The two-dimensional (2D) boron networks are dramatically stabilized by the electron transfer from Fe atoms, and the FeB6 monolayers have pronounced stabilities. The α-FeB6 monolayer is metallic, while the β-FeB6 and γ-FeB6 sheets are semiconductors with indirect band gaps and significant visible-light absorptions. Besides the novel chemical bonding, the high feasibility for experimental realization, and unique electronic and optical properties, render them very welcome new members to the graphene-like materials family. PMID:27035286

  10. Volatile organic silicon compounds: the most undesirable contaminants in biogases.

    PubMed

    Ohannessian, Aurélie; Desjardin, Valérie; Chatain, Vincent; Germain, Patrick

    2008-01-01

    Recently a lot of attention has been focused on volatile organic silicon compounds (VOSiC) present in biogases. They induce costly problems due to silicate formation during biogas combustion in valorisation engine. The cost of converting landfill gas and digester gas into electricity is adversely affected by this undesirable presence. VOSiC in biogases spark off formation of silicate deposits in combustion chambers. They engender abrasion of the inner surfaces leading to serious damage, which causes frequent service interruptions, thus reducing the economic benefit of biogases. It is already known that these VOSiC originate from polydimethylsiloxanes (PDMS) hydrolysis. PDMS (silicones) are used in a wide range of consumer and industrial applications. PDMS are released into the environment through landfills and wastewater treatment plants. There is a lack of knowledge concerning PDMS biodegradation during waste storage. Consequently, understanding PDMS behaviour in landfill cells and in sludge digester is particularly important. In this article, we focused on microbial degradation of PDMS through laboratory experiments. Preliminary test concerning anaerobic biodegradation of various PDMS have been investigated. Results demonstrate that the biotic step has an obvious influence on PDMS biodegradation. PMID:19029718

  11. Sputtering of silicon and its compounds in the electronic stopping region

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Griffith, J. E.; Meng, W. J.; Tombrello, T. A.

    1983-01-01

    Silicon, silicon dioxide, and silicon nitride have been sputtered with chlorine ions at 5 MeV and 20 MeV. While the yield from the silicon target was unmeasurably low, the insulating compounds exhibited the enhanced yields observed in other insulating targets. The yield follows the electronic stopping power and seems to be independent of the target's thermal properties. Some of the data suggest that the enhanced sputtering mechanism may be active in extremely thin films (not less than 3 monolayers).

  12. Modifying a silicone potting compound for space flight applications

    NASA Technical Reports Server (NTRS)

    Park, J. J.; Clatterbuck, C. H.

    1982-01-01

    RTV-615 has been devolatilized by subjecting the uncatalyzed resin to a temperature of between 125 and 150 C for 24 hours in a vacuum of about 10 to the -6th torr. The resultant resin can be catalyzed and after a room temperature cure the outgassing of the resin is sufficiently low when tested according to ASTM E-595 that it is suitable for space flight use. Tests of physical properties of the cured devolatilized resin were compared with those of the as received silicone. The devolatilized silicones are slightly harder, have a higher tear resistance and higher tensile strengths.

  13. A Technique for Reducing the Outgassing of Silicone Compounds

    NASA Technical Reports Server (NTRS)

    Park, J. J.; Clatterbuck, C. H.

    1982-01-01

    A technique was developed to heat silicone resins in vacuum and thereby remove the low molecular weight molecules which contribute to the high outgassing of the untreated resins. The technique was successfully applied to two silicone resins. Heating the monomer to a temperature about 398 K (125 C) in a vacuum of about 0.0001 N/sq m removes about 10% of the resin weight, and the resultant resin when catalyzed can meet the outgassing requirements when tested according to ASTM E-595. The physical properties of RTV-615 when devolatilized at 398 K (125 C) or at 423 K (150 C) were measured.

  14. Self-Assembly in Systems Containing Silicone Compounds

    SciTech Connect

    Ferreira, Maira Silva; Loh, Watson

    2009-01-29

    Chemical systems formed by silicone solvents and surfactants have potential applications in a variety of industrial products. In spite of their technological relevance, there are few reports on the scientific literature that focus on characterizing such ternary systems. In this work, we have aimed to develop a general, structural investigation on the phase diagram of one system that typically comprises silicone-based chemicals, by means of the SAXS (small-angle X-ray scattering) technique. Important features such as the presence of diverse aggregation states in the overall system, either on their own or in equilibrium with other structures, have been detected. As a result, optically isotropic chemical systems (direct and/or reversed microemulsions) and liquid crystals with lamellar or hexagonal packing have been identified and characterized.

  15. Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

    NASA Astrophysics Data System (ADS)

    Huang, Rao; Ma, Li-Bo; Ye, Jian-Ping; Wang, Yong-Qian; Cao, Ze-Xian

    2008-06-01

    High-density silicon nanoparticles with well-controlled sizes were grown onto cold substrates in amorphous SiN x and SiC matrices by plasma-enhanced chemical vapor deposition. Strong, tunable photoluminescence across the whole visible light range has been measured at room temperature from such samples without invoking any post-treatment, and the spectral features can find a qualitative explanation in the framework of quantum confinement effect. Moreover, the decay time was for the first time brought down to within one nanosecond. These excellent features make the silicon nanostructures discussed here very promising candidates for light-emitting units in photonic and optoelectronic applications.

  16. Volatile Organic Silicon Compounds in Biogases: Development of Sampling and Analytical Methods for Total Silicon Quantification by ICP-OES

    PubMed Central

    Julien, Jennifer; Dumont, Nathalie; Lebouil, David; Germain, Patrick

    2014-01-01

    Current waste management policies favor biogases (digester gases (DGs) and landfill gases (LFGs)) valorization as it becomes a way for energy politics. However, volatile organic silicon compounds (VOSiCs) contained into DGs/LFGs severely damage combustion engines and endanger the conversion into electricity by power plants, resulting in a high purification level requirement. Assessing treatment efficiency is still difficult. No consensus has been reached to provide a standardized sampling and quantification of VOSiCs into gases because of their diversity, their physicochemical properties, and the omnipresence of silicon in analytical chains. Usually, samplings are done by adsorption or absorption and quantification made by gas chromatography-mass spectrometry (GC-MS) or inductively coupled plasma-optical emission spectrometry (ICP-OES). In this objective, this paper presents and discusses the optimization of a patented method consisting in VOSiCs sampling by absorption of 100% ethanol and quantification of total Si by ICP-OES. PMID:25379538

  17. Volatile organic silicon compounds in biogases: development of sampling and analytical methods for total silicon quantification by ICP-OES.

    PubMed

    Chottier, Claire; Chatain, Vincent; Julien, Jennifer; Dumont, Nathalie; Lebouil, David; Germain, Patrick

    2014-01-01

    Current waste management policies favor biogases (digester gases (DGs) and landfill gases (LFGs)) valorization as it becomes a way for energy politics. However, volatile organic silicon compounds (VOSiCs) contained into DGs/LFGs severely damage combustion engines and endanger the conversion into electricity by power plants, resulting in a high purification level requirement. Assessing treatment efficiency is still difficult. No consensus has been reached to provide a standardized sampling and quantification of VOSiCs into gases because of their diversity, their physicochemical properties, and the omnipresence of silicon in analytical chains. Usually, samplings are done by adsorption or absorption and quantification made by gas chromatography-mass spectrometry (GC-MS) or inductively coupled plasma-optical emission spectrometry (ICP-OES). In this objective, this paper presents and discusses the optimization of a patented method consisting in VOSiCs sampling by absorption of 100% ethanol and quantification of total Si by ICP-OES. PMID:25379538

  18. Standard operating procedure (SOP) for the quantitative determination of organic silicon compounds at the surface of elastomeric sealants

    NASA Astrophysics Data System (ADS)

    Gross, Th; Treu, D.; Unger, W.

    2001-07-01

    Elastomeric sealants may contain organic silicon compounds. The use of these sealants for housings for electronic components is harmful for the reliability of electric contacts inside. In order to prevent electronic components from malfunction, quality control of elastomeric sealants is required. An analytical procedure developed to fulfil this requirement was developed. It is based on electron spectroscopy for chemical analysis (ESCA). Information on the silicon compounds existing at the surface of elastomeric sealants is provided by this method. Silicon in organic and inorganic compounds can be differentiated with the help of Si 2p photoelectron spectra. Quantitative results can be obtained too. The uncertainty budget of the quantitative procedure is estimated.

  19. Interaction of 1,2,5-chalcogenadiazole derivatives with thiophenolate: hypercoordination with formation of interchalcogen bond versus reduction to radical anion.

    PubMed

    Suturina, Elizaveta A; Semenov, Nikolay A; Lonchakov, Anton V; Bagryanskaya, Irina Yu; Gatilov, Yuri V; Irtegova, Irina G; Vasilieva, Nadezhda V; Lork, Enno; Mews, Rüdiger; Gritsan, Nina P; Zibarev, Andrey V

    2011-05-12

    According to the DFT calculations, [1,2,5]thiadiazolo[3,4-c][1,2,5]thiadiazole (4), [1,2,5]selenadiazolo[3,4-c][1,2,5]thiadiazole (5), 3,4-dicyano-1,2,5-thiadiazole (6), and 3,4-dicyano-1,2,5-selenadiazole (7) have nearly the same positive electron affinity (EA). Under the CV conditions they readily produce long-lived π-delocalized radical anions (π-RAs) characterized by EPR. Whereas 4 and 5 were chemically reduced into the π-RAs with thiophenolate (PhS(-)), 6 did not react and 7 formed a product of hypercoordination at the Se center (9) isolated in the form of the thermally stable salt [K(18-crown-6)][9] (10). The latter type of reactivity has never been observed previously for any 1,2,5-chalcogenadiazole derivatives. The X-ray structure of salt 10 revealed that the Se-S distance in the anion 9 (2.722 Å) is ca. 0.5 Å longer than the sum of the covalent radii of these atoms but ca. 1 Å shorter than the sum of their van der Waals radii. According to the QTAIM and NBO analysis, the Se-S bond in 9 can be considered a donor-acceptor bond whose formation leads to transfer of ca. 40% of negative charge from PhS(-) onto the heterocycle. For various PhS(-)/1,2,5-chalcogenadiazole reaction systems, thermodynamics and kinetics were theoretically studied to rationalize the interchalcogen hypercoordination vs reduction to π-RA dichotomy. It is predicted that interaction between PhS(-) and 3,4-dicyano-1,2,5-telluradiazole (12), whose EA slightly exceeds that of 6 and 7, will lead to hypercoordinate anion (17) with the interchalcogen Te-S bond being stronger than the Se-S bond observed in anion 9. PMID:21500829

  20. Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

    NASA Technical Reports Server (NTRS)

    Allevato, C. E.; Vining, Cronin B.

    1992-01-01

    The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

  1. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOEpatents

    Vernon, Stanley M.

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  2. Evaluation of a Silicone Membrane as an Alternative to Human Skin for Determining Skin Permeation Parameters of Chemical Compounds.

    PubMed

    Uchida, Takashi; Yakumaru, Masafumi; Nishioka, Keisuke; Higashi, Yoshihiro; Sano, Tomohiko; Todo, Hiroaki; Sugibayashi, Kenji

    2016-01-01

    We evaluated the effectiveness of a silicone membrane as an alternative to human skin using the skin permeation parameters of chemical compounds. An in vitro permeation study using 15 model compounds was conducted, and permeation parameters comprising permeability coefficient (P), diffusion parameter (DL(-2)), and partition parameter (KL) were calculated from each permeation profile. Significant correlations were obtained in log P, log DL(-2), and log KL values between the silicone membrane and human skin. DL(-2) values of model compounds, except flurbiprofen, in the silicone membrane were independent of the lipophilicity of the model compounds and were 100-fold higher than those in human skin. For antipyrine and caffeine, which are hydrophilic, KL values in the silicone membrane were 100-fold lower than those in human skin, and P values, calculated as the product of a DL(-2) and KL, were similar. For lipophilic compounds, such as n-butyl paraben and flurbiprofen, KL values for silicone were similar to or 10-fold higher than those in human skin, and P values for silicone were 100-fold higher than those in human skin. Furthermore, for amphiphilic compounds with log Ko/w values from 0.5 to 3.5, KL values in the silicone membrane were 10-fold lower than those in human skin, and P values for silicone were 10-fold higher than those in human skin. The silicone membrane was useful as a human skin alternative in an in vitro skin permeation study. However, depending on the lipophilicity of the model compounds, some parameters may be over- or underestimated. PMID:27581638

  3. Detection of high-energy compounds using photoluminescent silicon nanocrystal paper based sensors

    NASA Astrophysics Data System (ADS)

    Gonzalez, Christina M.; Iqbal, Muhammad; Dasog, Mita; Piercey, Davin G.; Lockwood, Ross; Klapötke, Thomas M.; Veinot, Jonathan G. C.

    2014-02-01

    Luminescent silicon nanocrystals (Si-NCs) surface functionalized with dodecyl groups were exposed to solutions of nitroaromatic compounds including nitrobenzene, nitrotoluene, and dinitrotoluene. It was found that Si-NC luminescence was quenched upon exposure to nitroaromatics via an electron transfer mechanism as indicated by Stern-Volmer analysis. This quenching was exploited and a straightforward paper-based Si-NC sensor was developed. This paper motif was found to be sensitive to solution, vapor, and solid phase nitroaromatics, as well as solution borne RDX and PETN.Luminescent silicon nanocrystals (Si-NCs) surface functionalized with dodecyl groups were exposed to solutions of nitroaromatic compounds including nitrobenzene, nitrotoluene, and dinitrotoluene. It was found that Si-NC luminescence was quenched upon exposure to nitroaromatics via an electron transfer mechanism as indicated by Stern-Volmer analysis. This quenching was exploited and a straightforward paper-based Si-NC sensor was developed. This paper motif was found to be sensitive to solution, vapor, and solid phase nitroaromatics, as well as solution borne RDX and PETN. Electronic supplementary information (ESI) available: Experimental details, Si-NC characterization, fluorescence spectra, solid residue testing and vapor study images. See DOI: 10.1039/c3nr06271f

  4. Ionisation effects on the permeation of pharmaceutical compounds through silicone membrane.

    PubMed

    Waters, L J; Bhuiyan, A K M M H

    2016-05-01

    Silicone membrane is frequently used as an in vitro skin mimic whereby experiments incorporate a range of buffered media which may vary in pH. As a consequence of such variability in pH there is a corresponding variability in the degree of ionisation which in turn, could influence permeation through the mainly hydrophobic-rich membrane structure. This study reports the effect of pH on the permeation of five model compounds (benzoic acid, benzotriazole, ibuprofen, ketoprofen and lidocaine). For the five compounds analysed, each at three distinct percentages of ionisation, it was found that the greater extent of permeation was always for the more 'neutral', i.e. more greatly unionised, species rather than the anionic or cationic species. These findings fit with the theory that the hydrophobic membrane encourages permeation of 'lipid-like' structures, i.e. the more unionised form of compounds. However, results obtained with an Inverse Gas Chromatography Surface Energy Analyser (iGC SEA) indicate the membrane surface to be an electron dense environment. In the knowledge that unionised forms of compounds permeate (rather than the charged species) this negatively charged surface was not anticipated, i.e. the basic membrane surface did not appear to affect permeation. PMID:26896663

  5. Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

    PubMed

    Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

    2015-07-01

    Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si. PMID:26057208

  6. Organic silicon compounds anf hydrogen sulfide removal from biogas by mineral and adsorbent

    NASA Astrophysics Data System (ADS)

    Choi, J.

    2015-12-01

    Biogas utilized for energy production needs to be free from organic silicon compounds and hydrogen sulfide , as their burning has damaging effects on utilities and humans; organic silicon compounds and hydrogen sulfide can be found in biogas produced from biomass wastes, due to their massive industrial use in synthetic product,such as cosmetics, detergents and paints.Siloxanes and hydrogen sulfide removal from biogas can be carried out by various methods (Ajhar et al., 2010); aim of the present work is to find a single practical andeconomic way to drastically and simultaneously reduce both hydrogen sulfide and the siloxanes concentration to less than 1 ppm. Some commercial activated carbons previously selected (Monteleoneet al., 2011) as being effective in hydrogen sulfide up taking have been tested in an adsorption measurement apparatus, by flowing both hydrogen sulphide and volatile siloxane (Decamethycyclopentasiloxane or D5) in a nitrogen stream,typically 25-300 ppm D5 over N2, through an clay minerals, Fe oxides and Silica; the adsorption process was analyzed by varying some experimental parameters (concentration, grain size, bed height). The best silica shows an adsorption capacity of 0.2 g D5 per gram of silica. The next thermo gravimetric analysis (TGA) confirms the capacity data obtained experimentally by the breakthrough curve tests.The capacity results depend on D5 and hydrogen sulphide concentrations. A regenerative silica process is then carried out byheating the silica bed up to 200 ° C and flushing out the adsorbed D5 and hydrogen sulphide samples in a nitrogen stream in athree step heating procedure up to 200 ° C. The adsorption capacity is observed to degrade after cyclingthe samples through several adsorption-desorption cycles.

  7. A study of the dynamic flammability of radiation cross-linked flame-retardant HDPE/EPDM/silicon-elastomer compound

    NASA Astrophysics Data System (ADS)

    Jia, Shaojin; Zhang, Zhicheng; Du, Zhiwen; Teng, Renrui; Wang, Zhengzhou

    2003-04-01

    A dynamic flammability study of flame-retardant compound consisting of HDPE, EPDM and silicon elastomer blended with additives, as wire and cable insulation was made before and after irradiation. The data of RHR, EHC, SEC and the concentration of CO and CO 2 from cone colorimeter shown in the burning process were accessed. By blending silicon elastomer, CO release rate was reduced and the thermal endurance was improved. Oxygen index, mechanical property, morphology of the char formed in dynamical flame and thermal stability were also investigated.

  8. Behavior of tensioactive compounds in the solutions for silicon anisotropic etching

    NASA Astrophysics Data System (ADS)

    Zubel, Irena; Rola, Krzysztof; Zalewska, Joanna

    2013-07-01

    In this work, results of measurements of surface tension of KOH and TMAH solutions containing alcohol additives were used to assess the behavior of the alcohols during silicon anisotropic etching. Surface tension of KOH and TMAH solutions containing additives of alcohols with one or more hydroxyl groups as well as etching rates and surface roughness of Si(100) and Si(110) surfaces etched in these solutions were analyzed. An improvement in roughness of both the planes was observed after addition of the alcohols to the KOH and TMAH solutions, however reduction of etching rates of Si(110) planes occurred only in KOH solutions. Based on surface tension measurements, it was stated that reduction of etching rates results from selective adsorption of the surface active compound on Si surfaces, which is possible due to adsorption layer formed on the solution surface of KOH etchant. The adsorption layer does not appear in TMAH + alcohols solutions, which accounts for a different behavior of TMAH-based etchants.

  9. Corrosion Processes of the CANDU Steam Generator Materials in the Presence of Silicon Compounds

    SciTech Connect

    Lucan, Dumitra; Fulger, Manuela; Velciu, Lucian; Lucan, Georgiana; Jinescu, Gheorghita

    2006-07-01

    The feedwater that enters the steam generators (SG) under normal operating conditions is extremely pure but, however, it contains low levels (generally in the {mu}g/l concentration range) of impurities such as iron, chloride, sulphate, silicate, etc. When water is converted into steam and exits the steam generator, the non-volatile impurities are left behind. As a result of their concentration, the bulk steam generator water is considerably higher than the one in the feedwater. Nevertheless, the concentrations of corrosive impurities are in general sufficiently low so that the bulk water is not significantly aggressive towards steam generator materials. The impurities and corrosion products existing in the steam generator concentrate in the porous deposits on the steam generator tubesheet. The chemical reactions that take place between the components of concentrated solutions generate an aggressive environment. The presence of this environment and of the tubesheet crevices lead to localized corrosion and thus the same tubes cannot ensure the heat transfer between the fluids of the primary and secondary circuits. Thus, it becomes necessary the understanding of the corrosion process that develops into SG secondary side. The purpose of this paper is the assessment of corrosion behavior of the tubes materials (Incoloy-800) at the normal secondary circuit parameters (temperature = 2600 deg C, pressure = 5.1 MPa). The testing environment was demineralized water containing silicon compounds, at a pH=9.5 regulated with morpholine and cyclohexyl-amine (all volatile treatment - AVT). The paper presents the results of metallographic examinations as well as the results of electrochemical measurements. (authors)

  10. Toxic Compounds in Our Food: Arsenic Uptake By Rice and Potential Mitigation By Silicon

    NASA Astrophysics Data System (ADS)

    Seyfferth, A.; Gill, R.; Penido, E.

    2014-12-01

    Arsenic is a ubiquitous element in soils worldwide and has the potential to negatively impact human and ecosystem health under certain biogeochemical conditions. While arsenic is relatively immobile in most oxidized soils due to a high affinity for soil solids, arsenic becomes mobilized under reduced soil conditions due to the reductive dissolution of iron(III) oxides thereby releasing soil-bound arsenic. Since arsenic is a well-known carcinogen, this plant-soil process has the potential to negatively impact the lives of billions of rice consumers worldwide upon plant uptake and grain storage of released arsenic. Moreover, arsenic uptake by rice is excacerbated by the use of As-laden groundwater for rice irrigation. One proposed strategy to decrease arsenic uptake by rice plants is via an increase in dissolved silicon in paddy soil solution (pore-water), since silicic acid and arsenous acid share an uptake pathway. However, several soil processes that influence arsenic cycling may be affected by silicon including desorption from bulk soil, formation and mineralogy of iron(III) oxide plaque, and adsorption/desorption onto/from iron plaque; the effect of silicon on these soil processes will ultimately dictate the effectiveness of altered dissolved silicon in decreasing arsenic uptake at the root, which in turn dictates the concentration of arsenic found in grains. Furthermore, the source of silicon may impact carbon cycling and, in particular, methane emissions. Here, impacts of altered dissolved silicon on processes that affect rhizospheric biogeochemical cycling of arsenic and subsequent plant-uptake, and how it influences other biogeochemical cycles such as carbon and iron are investigated. We show that silicon can decrease arsenic uptake and grain storage under certain conditions, and that altered silicon affects the type of iron (III) oxide that comprises iron plaque.

  11. Effect of embedded metal compound on porosity of silica colloids prepared by spray reaction of silicon tetrachloride.

    PubMed

    Isobe, Hiroshi; Hattori, Yoshiyuki; Hayano, Tomoe; Kanoh, Hirofumi; Yamamoto, Kohzoh; Kaneko, Katsumi

    2006-03-15

    Attempts to prepare macroporous silica particles and metal-compound-nanoparticle-embedded silica microspheres were carried out using reactions between silicon tetrachloride and ultrasonic generating microdroplets including metal (Na, K, Al, Ni, Ti, Pt) compounds. Samples were collected by dry and wet processes. In the case of using nickel and aluminum compounds, acid-treated samples were also prepared. The obtained samples were characterized by scanning electron microscopy, X-ray fluorescence spectroscopy, powder X-ray diffractometry, mercury porosimetry, and the nitrogen adsorption method. The macroporous silica particles were prepared by removing the salt crystals, such as NaCl and KCl, formed in the silica frame. For acid-resistant metals, platinum- and titanium-compound nanoparticles are easily embedded in silica microspheres using these metal-compound solutions. For acid-soluble metals, aluminum- and nickel-compound-nanoparticle-embedded silicas were prepared by applying neutralization of the collection water. Micropores and mesopores were produced in wet-process samples. Acid treatment induced the increase of micropore volumes. PMID:16246356

  12. Coordination compounds of tetravalent silicon, germanium and tin: the structure, chemical bonding and intermolecular interactions in them

    NASA Astrophysics Data System (ADS)

    Korlyukov, A. A.

    2015-04-01

    The review is devoted to analysis and generalization of the results of (i) quantum chemical studies on the structure, chemical bonding and intermolecular interactions in coordination compounds of tetravalent silicon, germanium and tin in crystals, in solutions and in the gas phase and (ii) experimental investigations of the electron density distribution in these systems. The bibliography includes 147 references. In memoriam of Corresponding Member of the Russian Academy of Sciences M Yu Antipin (1951 - 2013), Academician of the Russian Academy of Sciences M G Voronkov (1921 - 2014) and Dr. S P Knyazev, Lomonosov Moscow University of Fine Chemical Technology (1949 - 2012).

  13. Structural and magnetothermal properties of compounds: ytterbium silicon germanium, samarium silicon germanium, europium monooxide, and europium tetroxide

    NASA Astrophysics Data System (ADS)

    Ahn, Kyunghan

    The family of R5Si xGe4-x alloys demonstrates a variety of unique physical phenomena related to magneto-structural transitions associated with reversible breaking and reforming of specific bonds that can be controlled by numerous external parameters such as chemical composition, magnetic field, temperature, and pressure. Therefore, R 5SixGe4-x systems have been extensively studied to uncover the mechanism of the extraordinary magneto-responsive properties including the giant magnetoresistance (GMR) and colossal magnetostriction, as well as giant magnetocaloric effect (GMCE). Here, we report on phase relationships and structural, magnetic, and thermodynamic properties in the Yb5SixGe4- x and Sm5SixGe 4-x pseudobinary systems, which may exhibit mixed valence states. The crystallography, phase relationships, and physical properties of Yb5SixGe4- x alloys with 0 ≤ x ≤ 4 have been examined by using single crystal and powder x-ray diffraction at room temperature, and dc magnetization and heat capacity measurements between 1.8 K and 400 K in magnetic fields ranging from 0 to 7 T. Both the crystallographic and magnetic property data indicate that Yb5SixGe 4-x alloys are mixed valence systems, in which the majority (60%) of Yb atoms is divalent, while the minority (40%) is trivalent. This finding is supported by recent Mossbauer spectroscopy data. The magnetic properties of the Sm5SixGe 4-x compounds can be well described by considering the temperature-independent Van Vleck term due to small energy separation between the ground state and the first excited state of Sm3+ ions. All Sm5SixGe4- x compounds have unusually high magnetic ordering temperatures. The change in both the magnetic and structural behaviors with the substitution of Ge by Si is similar to that observed in the Gd5Si xGe4-x system. The external magnetic field seems to have no effect on the magnetism of the Sm5Si xGe4-x alloys. Europium oxides, EuO with the divalent state and Eu3O 4 with the mixed

  14. Lewis Acidity of Bis(perfluorocatecholato)silane: Aldehyde Hydrosilylation Catalyzed by a Neutral Silicon Compound

    SciTech Connect

    Liberman-Martin, Allegra L.; Bergman, Robert G.; Tilley, T. Don

    2015-04-16

    Bis(perfluorocatecholato)silane Si(cat(F)2 was prepared, and stoichiometric binding to Lewis bases was demonstrated with fluoride, triethylphosphine oxide, and N,N'-diisopropylbenzamide. The potent Lewis acidity of Si(cat(F)2 was suggested from catalytic hydrosilylation and silylcyanation reactions with aldehydes. Mechanistic studies of hydrosilylation using an optically active silane substrate, R-(+)-methyl-(1-naphthyl)phenylsilane, proceeded with predominant stereochemical retention at silicon, consistent with a carbonyl activation pathway. The enantiospecificity was dependent on solvent and salt effects, with increasing solvent polarity or addition of NBu4BAr(F)4 leading to a diminished enantiomeric ratio. The medium effects are consistent with an ionic mechanism, wherein hydride transfer occurs prior to silicon-oxygen bond formation.

  15. Lewis Acidity of Bis(perfluorocatecholato)silane: Aldehyde Hydrosilylation Catalyzed by a Neutral Silicon Compound

    DOE PAGESBeta

    Liberman-Martin, Allegra L.; Bergman, Robert G.; Tilley, T. Don

    2015-04-16

    Bis(perfluorocatecholato)silane Si(cat(F)2 was prepared, and stoichiometric binding to Lewis bases was demonstrated with fluoride, triethylphosphine oxide, and N,N'-diisopropylbenzamide. The potent Lewis acidity of Si(cat(F)2 was suggested from catalytic hydrosilylation and silylcyanation reactions with aldehydes. Mechanistic studies of hydrosilylation using an optically active silane substrate, R-(+)-methyl-(1-naphthyl)phenylsilane, proceeded with predominant stereochemical retention at silicon, consistent with a carbonyl activation pathway. The enantiospecificity was dependent on solvent and salt effects, with increasing solvent polarity or addition of NBu4BAr(F)4 leading to a diminished enantiomeric ratio. The medium effects are consistent with an ionic mechanism, wherein hydride transfer occurs prior to silicon-oxygen bond formation.

  16. Elastic and Thermal Properties of Silicon Compounds from First-Principles Calculations

    NASA Astrophysics Data System (ADS)

    Hou, Haijun; Zhu, H. J.; Cheng, W. H.; Xie, L. H.

    2016-07-01

    The structural and elastic properties of V-Si (V3Si, VSi2, V5Si3, and V6Si5) compounds are studied by using first-principles method. The calculated equilibrium lattice parameters and formation enthalpy are in good agreement with the available experimental data and other theoretical results. The calculated results indicate that the V-Si compounds are mechanically stable. Elastic properties including bulk modulus, shear modulus, Young's modulus, and Poisson's ratio are also obtained. The elastic anisotropies of V-Si compounds are investigated via the three-dimensional (3D) figures of directional dependences of reciprocals of Young's modulus. Finally, based on the quasi-harmonic Debye model, the internal energy, Helmholtz free energy, entropy, heat capacity, thermal expansion coefficient, Grüneisen parameter, and Debye temperature of V-Si compounds have been calculated.

  17. Photoluminescence-based measurement technique of surface recombination velocity for high efficiency silicon and compound semiconductor solar cells

    SciTech Connect

    Saitoh, T.; Nakagawa, T.; Yoh, K.; Hasegawa, H.

    1994-12-31

    This paper shows that the recently proposed photoluminescence surface state spectroscopy (PLS{sup 3}) technique allows an in-situ, contactless and non-destructive determination of the value of the effective surface recombination velocity (S) under sunlight illumination and the surface/interface state density (N{sub ss}) distributions. This technique is successfully applied to measurement of the values of S at variously passivated Si surfaces. A best value of 3,000 cm/s is obtained under 1 sun condition for thermal oxidation. S is greatly reduced under concentrated sunlight. N{sub ss} distributions at compound semiconductor surfaces and heterointerfaces are also characterized to optimize the fabrication process of compound semiconductor solar cells. Formation of Si interface control layer (ICL) between InGaAs and SiO{sub 2} greatly reduces the interface states. Growth interruption at AlGaAs/GaAs hetero-interface produces high density of interface states. InAlAs/InGaAs heterointerfaces are also investigated. These results indicate that the new PLS{sup 3} technique is useful for the characterization and optimization of the fabrication processes of the silicon and compound semiconductor solar cells.

  18. Development of a silicone membrane tube equilibrator for measuring partial pressures of volatile organic compounds in natural water.

    PubMed

    Ooki, Atsushi; Yokouchi, Yoko

    2008-08-01

    Methods for determining volatile organic compounds (VOCs) in water and air are required so that the VOCs' fluxes in water environments can be estimated. We developed a silicone membrane tube equilibrator for collecting gas-phase samples containing VOCs at equilibrium with natural water. The equilibrator consists of six silicone tubes housed in a polyvinyl chloride pipe. Equilibrated air samples collected from the equilibrator were analyzed with an automated preconcentration gas chromatography-mass spectrometry system for hourly measurements of VOC partial pressures. The partial pressures of all the target VOCs reached equilibrium within 1 h in the equilibrator. The system was used to determine VOC partial pressures in Lake Kasumigaura, a shallow eutrophic lake with a high concentration of suspended particulate matter (SPM). Compressed air was used daily to remove SPM deposited on the inner wall of the equilibrator and to maintain the equilibrium conditions for more than a week without the need to shut the system down. CH2Br2, CHCl3, CHBrCl2, CH2BrCl, C2H5I, C2Cl4, CH3I, and CH3Br in the lake were supersaturated with respect to the air, whereas CH3CI was undersaturated. CHCl3 had the highest flux (6.2 nmol m(-2) hr(-1)) during the observation period. PMID:18754497

  19. Structural, elastic, and electronic properties of sodium atoms encapsulated type-I silicon-clathrate compound under high pressure

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Chen, Qing-Yun; Zeng, Zhao-Yi; Cai, Ling-Cang

    2015-10-01

    We calculated the structural, elastic, and electronic properties of alkali metal Na atoms doped type-I silicon-clathrate compound (Na8Si46) under pressure using first-principles methods. The obtained dependencies of bond lengths and bond angles on pressure show heterogeneous behaviors which may bring out a structural transition. By using the elastic stability criteria from the calculated elastic constants, we confirm that the Na8Si46 is elastically unstable under high pressure. Some of the mechanical and thermal quantities include bulk modulus, shear modulus, Young’s modulus, Debye temperature, sound velocity, melting point, and hardness, which are also derived from the elastic constants. The calculated total and partial electron densities of states of Na8Si46 indicate a weak interaction between the encapsulated Na atoms and the silicon framework. Moreover, the effect of pressure on its electronic structure is also investigated, which suggests that pressure is not a good choice to enhance the thermoelectricity performance of Na8Si46. Project supported by National Natural Science Foundation of China (Grant Nos. 11347134 and 11304254) and the Doctor Foundation of Southwest University of Science and Technology, China (Grant No. 13zx7125).

  20. Low power consumption silicon photonics tuning filters based on compound microring resonators

    NASA Astrophysics Data System (ADS)

    Vázquez, C.; Contreras, P.; Vargas, S.

    2013-02-01

    Scalable integrated optics platforms based on silicon-on-insulator allow to develop optics and electronics functions on the same chip. Developments in this area are fostered by its potential as an I/O technology that can meet the throughputs demand of future many-core processors. Most of the optical interconnect designs rely on small footprint and high power efficiency microring resonators. They are used to filter out individual channels from a shared bus guide. Second-order microring filters enable denser channel packing by having sharper pass-band to stop-band slopes. Taking advantage of using a single physical ring with clockwise and counter-clockwise propagation, we implement second order filters with lower tuning energy consumption as being more resilient to some fabrication errors. Cascade ability, remote stabilization potential, energy efficiency along with simple design equations on coupling coefficients are described. We design second-order filters with FWHM from 45 GHz to 20 GHz, crosstalk between channels from -40 dB to -20 dB for different channel spacing at a specific FSR, with energy efficiencies of single ring configurations and compatible with silicon-on-insulator (SOI) state of the art platforms.

  1. Incorporation of the silicon germanium carbon compound in the realization of a bipolar inversion channel field-effect transistor (BICFET)

    NASA Astrophysics Data System (ADS)

    Sharer, Deborah Louise

    The feasibility of fabrication of an inversion base transistor in the BICFET (Bipolar Inversion Channel Field Effect Transistor) configuration is investigated in this project. The requisite heterostructure will be realized through the extensive use of the silicon germanium carbon compound Si1-x-yGexCy. It is anticipated that band offsets comparable to Si1-xGex(x ˜ 0.5) will be achieved without the inherent difficulties associated with induced strains and epilayer thickness limitations present in this system. Initial explorations will be carried out through utilization of software acquired from Technology Modeling Associates, Sunnyvale, California. Simulations will be accomplished through the use of the Medici software, which is capable of modeling semiconductor devices comprised of conventional and/or user defined materials, impurities, structures and operating conditions. The Medici package, in conjunction with the Heterojunction Device Advanced Application Module (AAM), the Lattice Temperature AAK the Trapped Charge AAK and the Anisotropic Material AAK will also allow prediction of the electrical properties and characteristics of semiconductor devices composed of anisotropic media that possess a discontinuous band structure and inevitable defect constraints under variable thermal conditions. Through the capability of user defined compounds, the effect of incorporating carbon into Si1--xGex will be explored and internal device operation, as well as any breakdown or failure mechanisms allowed for in the software, will be determined.

  2. Polar intermetallic compounds of the silicon and arsenic family elements and their ternary hydrides and fluorides

    SciTech Connect

    Leon-Escamilla, E.A.

    1996-10-17

    An investigation has been made on the effects of hydrogen and fluoride in the solid state chemistry of alkaline-earth and divalent rare-earth metal pnictide (Pn) and tetrelide (Tt) phases A{sub 5}(Pn,Tt,){sub 3}Z{sub x}, where A = Ca, Sr, Ba, Sm, Eu, Yb; Pn = As, Sb, Bi; Tt = Si, Ge, Sn, Pb and Z = H, F. Several trivalent rare-earth-metal pnictides, RE{sub 5}Pn{sub 3} (RE = Y, La, Gd, Tb, Dy, Ho, Er, Tm) and alkaline-earth-metal trielides, A{sub 5}Tr{sub 3}Z{sub x} (Tr = Ga, In, Tl) have been included in an effort to complete observed structural trends. Two main experimental techniques were followed throughout this work, (a) reactions in absence of hydrogen or under continuous high vacuum, and (b) reactions with binary metal hydrides, AH{sub x}, in closed containers. The results demonstrate that all the phases reported with the {beta}-Yb{sub 5}Sb{sub 3}-type structure in the A{sub 5}Pn{sub 3} systems are hydrogen-stabilized compounds. Reactions in absence of hydrogen lead to compounds with the Mn{sub 5}Si{sub 3}-type structure. The structure type {beta}-Yb{sub 5}Sb{sub 3} (= Ca{sub 5}SB{sub 3}F) was found to be characteristic of ternary systems and inaccurately associated with phases that form in the Y{sub 5}Bi{sub 3}-type. A new series of isomorphous Zintl compounds with the Ca{sub 16}Sb{sub 11}-type structure were prepared and studied as well. All the alkaline-earth-metal tetrelides, A{sub 5}Tt{sub 3}, that crystallize in the Cr{sub 5}B{sub 3}-type structure can be interstitially derivatized by hydrogen or fluoride. Binary and ternary compounds were characterized by Guinier powder patterns, single crystal X-ray and powder neutron diffraction techniques. In an effort to establish property-structure relationships, electrical resistivity and magnetic measurements were performed on selected systems, and the results were explained in terms of the Zintl concepts, aided by extended Hueckel band calculations.

  3. Silicon- and Tin-Containing Open-Chain and Eight-Membered-Ring Compounds as Bicentric Lewis Acids toward Anions.

    PubMed

    Wendji, Anicet Siakam; Dietz, Christina; Kühn, Silke; Lutter, Michael; Schollmeyer, Dieter; Hiller, Wolf; Jurkschat, Klaus

    2016-01-01

    Herein, we report the syntheses of silicon- and tin-containing open-chain and eight-membered-ring compounds Me2 Si(CH2 SnMe2 X)2 (2, X=Me; 3, X=Cl; 4, X=F), CH2 (SnMe2 CH2 I)2 (7), CH2 (SnMe2 CH2 Cl)2 (8), cyclo-Me2 Sn(CH2 SnMe2 CH2 )2 SiMe2 (6), cyclo-(Me2 SnCH2 )4 (9), cyclo-Me(2-n) Xn Sn(CH2 SiMe2 CH2 )2 SnXn Me(2-n) (5, n=0; 10, n=1, X=Cl; 11, n=1, X=F; 12, n=2, X=Cl), and the chloride and fluoride complexes NEt4 [cyclo- Me(Cl)Sn(CH2 SiMe2 CH2 )2 Sn(Cl)Me⋅F] (13), PPh4 [cyclo-Me(Cl)Sn(CH2 SiMe2 CH2 )2 Sn(Cl)Me⋅Cl] (14), NEt4 [cyclo-Me(F)Sn(CH2 SiMe2 CH2 )2 Sn(F)Me⋅F] (15), [NEt4 ]2 [cyclo-Cl2 Sn(CH2 SiMe2 CH2 )2 SnCl2 ⋅2 Cl] (16), M[Me2 Si(CH2 Sn(Cl)Me2 )2 ⋅Cl] (17 a, M=PPh4 ; 17 b, M=NEt4 ), NEt4 [Me2 Si(CH2 Sn(Cl)Me2 )2 ⋅F] (18), NEt4 [Me2 Si(CH2 Sn(F)Me2 )2 ⋅F] (19), and PPh4 [Me2 Si(CH2 Sn(Cl)Me2 )2 ⋅Br] (20). The compounds were characterised by electrospray mass-spectrometric, IR and (1) H, (13) C, (19) F, (29) Si, and (119) Sn NMR spectroscopic analysis, and, except for 15 and 18, single-crystal X-ray diffraction studies. PMID:26616743

  4. Study of properties of SiC layer in TRISO coated particles grown using different alkyl-silicon compounds

    NASA Astrophysics Data System (ADS)

    Prakash, Jyoti; Ghosh, Sunil; Venugopalan, Ramani; Sathiyamoorthy, D.

    2013-06-01

    The silicon carbide (SiC) layer used for the formation of Tri-isostatic (TRISO) coated fuel particles is normally produced at high temperatures via fluidized bed chemical vapor deposition from methyltrichlorosilane (MTS) in a hydrogen environment. In this work, we show the deposition of uniform SiC layers using different organosilicon precursors such as MTS and hexamethyldisilane (HMDS) via spouted bed chemical vapor deposition. From the X-ray diffraction pattern it could be inferred that the SiC deposits obtained through different precursors have the β-SiC phase. The microstructure and mechanical properties of the fabricated SiC coating were studied. The hardness and fracture toughness of the fabricated SiC coatings using MTS and HMDS were nearly the same and close to the theoretical value for pure silicon carbide.

  5. Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

    NASA Technical Reports Server (NTRS)

    Vandersande, Jan W. (Inventor); Wood, Charles (Inventor); Draper, Susan L. (Inventor)

    1989-01-01

    The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

  6. Boron-silicon solid solution: synthesis and crystal structure of a carbon-doped boron-rich SiB{sub n} (n{approx}30) compound

    SciTech Connect

    Roger, Jerome; Babizhetskyy, Volodymyr; Halet, Jean-Francois; Guerin, Roland . E-mail: roland.guerin@univ-rennes1.fr

    2004-11-01

    The carbon-doped SiB{sub 3}{approx}{sub 30} compound was obtained during attempts to synthesize by arc-melting boron-rich binaries belonging to the SiB{sub n} solid solution (13n<32). Its crystal structure was determined from X-ray single-crystal intensity data (R-3m, Z=1, a=11.0152(3)A, and c=23.8625(8)A) and led to the final formula SiB{sub {approx}}{sub 30}C{sub 0.35}. Carbon is incorporated fortuitously in the structure. The boron framework of these phases slightly differs from that encountered in {beta}-boron. The salient characteristic is the partial occupancy of three interstitial boron sites by silicon and one by carbon atoms. This is in contrast with the structurally related compounds such as SiB{sub {approx}}{sub 36}, CrB{sub {approx}}{sub 41}, or FeB{sub {approx}}{sub 40}, in which only two interstitial sites are partially occupied.

  7. Contrasting effect of silicon on iron, zinc and manganese status and accumulation of metal-mobilizing compounds in micronutrient-deficient cucumber.

    PubMed

    Bityutskii, Nikolai; Pavlovic, Jelena; Yakkonen, Kirill; Maksimović, Vuk; Nikolic, Miroslav

    2014-01-01

    Although the beneficial role of silicon (Si) in alleviation of abiotic stress is well established, little is known of the relevance of Si nutrition under microelement deficiency. The aim of our work was to investigate the physiological role of Si in relation to micronutrient (Fe, Zn and Mn) deficiencies in cucumber (Cucumis sativus L.). Cucumber (cv. Semkross) plants were grown hydroponically in a complete nutrient solution (control) and in nutrient solutions free from Fe, Zn or Mn, with or without Si supply. Plant tissue concentrations of microelements, organic acids and phenolics were measured. Si supply effectively mitigated the symptoms of Fe deficiency, but only in part, the symptoms of Zn- or Mn deficiency. Leaf Fe concentration significantly increased in plants deprived of Fe but treated with Si, whereas the concentrations of other microelements were not affected by Si supply. The effects of Si supply in increasing accumulation of both organic acids and phenolic compounds in cucumber tissues were exclusively related to Fe nutrition. Enhancement of Fe distribution towards apical shoot parts, along with the tissue accumulation of Fe-mobilizing compounds such as citrate (in leaves and roots) or cathechin (in roots) appears to be the major alleviating effect of Si. Si nutrition, however, was without effect on the mobility and tissue distribution of either Zn or Mn. PMID:24316009

  8. Hypercoordinate ketone adducts of electrophilic η3-H2SiRR' ligands on ruthenium as key intermediates for efficient and robust catalytic hydrosilation.

    PubMed

    Lipke, Mark C; Tilley, T Don

    2014-11-19

    The electrophilic η(3)-H2SiRR' σ-complexes [PhBP(Ph)3]RuH(η(3)-H2SiRR') (RR' = MePh, 1a; Ph2, 1b; [PhBP(Ph)3](-) = [PhB(CH2PPh2)3](-)) are efficient catalysts (0.01-2.5 mol % loading) for the hydrosilation of ketones with PhMeSiH2, Ph2SiH2, or EtMe2SiH. An alkoxy complex [PhBP(Ph)3]Ru-OCHPh2 (4b) was observed (by (31)P{(1)H} NMR spectroscopy) as the catalyst resting state during hydrosilation of benzophenone with EtMe2SiH. A different catalyst resting state was observed for reactions using PhMeSiH2 or Ph2SiH2, and was identified as a silane σ-complex [PhBP(Ph)3]RuH[η(2)-H-SiRR'(OCHPh2)] (RR' = MePh, 5a; Ph2, 5b) using variable temperature multinuclear NMR spectroscopy (-80 to 20 °C). The hydrosilation of benzophenone with PhMeSiH2 and 1a was examined by (1)H NMR spectroscopy at -18 °C (in CD2Cl2), and this revealed that either 1a, 5a, or both 1a and 5a could be observed as resting states of the catalytic cycle, depending on the initial [PhMeSiH2]:[benzophenone] ratio. Kinetic studies revealed two possible expressions for the rate of product formation, depending on which catalyst resting state was present (rate = kobs[PhMeSiH2][5a] and rate = k'obs[benzophenone][1a]). Computational methods (DFT, b3pw91, 6-31G(d,p)/LANL2DZ) were used to determine a model catalytic cycle for the hydrosilation of acetone with PhMeSiH2. A key step in this mechanism involves coordination of acetone to the silicon center of 1a-DFT, which leads to insertion of the carbonyl group into an Si-H bond (that is part of a Ru-H-Si 3c-2e bond). This generates an intermediate analogous to 5a (5a-i-DFT), and the final product is displaced from 5a-i-DFT by an associative process involving PhMeSiH2. PMID:25347044

  9. High piezoelectricity of Pb(Zr,Ti)O{sub 3}-based ternary compound thin films on silicon substrates

    SciTech Connect

    Zhang Tao; Zhang Shuyi; Chen Zhaojiang; Zhou Fengmei; Zhang Zhongning; Yang Yuetao; Wasa, Kiyotaka

    2009-03-23

    Pb(Zr,Ti)O{sub 3} (PZT)-based ternary compound thin films, 0.06PMnN-0.94PZT(50/50) (PMnN-PZT), are deposited on Si-based heterostructures by rf magnetron sputtering system. The intrinsic PZT(50/50) thin films are also deposited on the same kind of substrates for comparison. The PMnN-PZT thin films show the similar polycrystalline structures as those of PZT with highly (111) oriented perovskite phase. The PMnN-PZT thin films show excellent piezoelectricity and ferroelectricity which are distinctly better than those of PZT thin films prepared with the same deposition conditions. Besides, the cantilevers of PMnN-PZT thin films on the heterostructure substrates also exhibit higher sensitivities than the PZT thin film cantilevers.

  10. Superconductivity, Magnetism, and Charge Density Wave Formation in Ternary Compounds with the SCANDIUM(5)COBALT(4)SILICON(10) - Structure.

    NASA Astrophysics Data System (ADS)

    Yang, Hung-Duen

    1987-05-01

    The variation of the superconducting transition temperature T(,c) with hydrostatic pressure up to 23.7 kbar is reported for eleven compounds with the Sc(,5)Co(,4)Si(,10) -type structure. Most of these compounds display a modest linear depression of T(,c) with pressure (dT(,c)/dp (TURN) 10('-5) K/bar), however, two materials, Lu(,5)Ir(,4)Si(,10) and Lu(,5)Rh(,4)Si(,10), undergo a discontinuous transformation above a critical pressure of about 20 kbar to a state with a significantly higher T(,c). The resistivity and magnetic susceptibility show an anomaly in Lu(,5)Ir(,4)Si(,10) and Lu(,5)Rh(,4)Si(,10) at T(,o) = 83 K and 155 K respectively. It is interpreted that this phase transformation may involve a charge density wave (CDW) formation that opens an energy gap over a portion of the Fermi surface. The P-T phase diagram for Lu(,5)Ir(,4)Si(,10), given to demonstrate the correlation between T(,o) and T(,c), provides the clear evidence that the pressure enhancement of T(,c) is due to a progressive removal of the charge density wave in the crystal. Combining the magnetic susceptibility and heat capacity data, we give a quantitative estimate of a 36% loss in the electronic density of states at the Fermi level due to this energy gap in Lu(,5)Ir(,4)Si(,10). The pseudoternary system (Lu(,1-x)Sc(,x))(,5)Ir(,4)Si(,10), 0 (LESSTHEQ) x (LESSTHEQ) 0.05, is used to study the doping (impurity) effect on the CDW and the competition between T(,o) and T(,c) in Lu(,5)Ir(,4)Si(,10). It is found that (dT(,o)/dx)(,x=0) = -18.5 K/at % and (dT(,c)/dx)(,x=0) = 0.5 K/at %, are comparable to another CDW system (Ta(,1 -x)Nb(,x))S(,3). The electrical and magnetic properties for R(,5)Ir(,4)Si(,10) (R = Dy-Yb) are also reported. All of these compounds exhibit an anomaly in resistivity, which is considered to be due to the formation of a CDW, similar to the one observed in Lu(,5)Ir(,4)Si(,10). Two distinct magnetic transitions with different features, seen in the ac magnetic susceptibility and heat

  11. Particle size distribution of aerosols sprayed from household hand-pump sprays containing fluorine-based and silicone-based compounds.

    PubMed

    Kawakami, Tsuyoshi; Isama, Kazuo; Ikarashi, Yoshiaki

    2015-01-01

    Japan has published safety guideline on waterproof aerosol sprays. Furthermore, the Aerosol Industry Association of Japan has adopted voluntary regulations on waterproof aerosol sprays. Aerosol particles of diameter less than 10 µm are considered as "fine particles". In order to avoid acute lung injury, this size fraction should account for less than 0.6% of the sprayed aerosol particles. In contrast, the particle size distribution of aerosols released by hand-pump sprays containing fluorine-based or silicone-based compounds have not been investigated in Japan. Thus, the present study investigated the aerosol particle size distribution of 16 household hand-pump sprays. In 4 samples, the ratio of fine particles in aerosols exceeded 0.6%. This study confirmed that several hand-pump sprays available in the Japanese market can spray fine particles. Since the hand-pump sprays use water as a solvent and their ingredients may be more hydrophilic than those of aerosol sprays, the concepts related to the safety of aerosol-sprays do not apply to the hand pump sprays. Therefore, it may be required for the hand-pump spray to develop a suitable method for evaluating the toxicity and to establish the safety guideline. PMID:26821469

  12. 1-Boraadamantane: reactivity towards di(1-alkynyl)silicon and -tin compounds: first access to 7-metalla-2,5-diboranorbornane derivatives.

    PubMed

    Wrackmeyer, B; Milius, W; Klimkina, E V; Bubnov, Y N

    2001-01-01

    1-Boraadamantane (1) reacts with di(1-alkynyl)silicon and -tin compounds 2 (Me2M(C...CR)2: M=Si; R=Me (a), tBu (b), SiMe3 (c); M=Sn, R=SiMe3 (e)) in a 1:1 ratio by intermolecular 1,1-alkylboration, followed by intramolecular 1,1-vinylboration, to give siloles 5a-c and the stannole 5e, respectively, in which the tricyclic 1-boraadamantane system is enlarged by two carbon atoms. Owing to the high reactivity of 1, a second fast intermolecular 1,1-alkylboration competes with the intramolecular 1,1-vinylboration as the second major step in the reaction if the substituent R at the C...C bond is small (2a) and/or if the M-C... bond is also highly reactive, as in 2d (M=Sn, R= Me) and 2e (M=Sn, R=SiMe3). This leads finally to the novel octacyclic 7-metalla-2,5-diboranorbornane derivatives 8a, 8d, and 8e, of which 8e was characterized by X-ray analysis in the solid state. 1,1,2,2-Tetramethyldi(1-propynyl)disilane, MeC...C-SiMe2SiMe2-C...CMe (3), reacts with 1 to give mainly a 1,2-dihydro-1,2,5-disilaborepine derivative 9 and the octacyclic compound 11, which is analogous to 8a but with an Me4Si2 bridge. All new products were characterized in solution by 1H, 11B, 13C, 29Si, and 119Sn NMR spectroscopy. For 8 and 11, highly resolved 29Si and 119Sn NMR spectra revealed the first two-bond isotope-induced chemical shifts, 2delta10/11B(29Si) and 2delta10/11B(119Sn) respectively, to be reported. PMID:11288867

  13. Silicon carbide-silicon composite having improved oxidation resistance and method of making

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    1999-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  14. Method of making silicon carbide-silicon composite having improved oxidation resistance

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    2002-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  15. K- and L-edge X-ray absorption spectrum calculations of closed-shell carbon, silicon, germanium, and sulfur compounds using damped four-component density functional response theory.

    PubMed

    Fransson, Thomas; Burdakova, Daria; Norman, Patrick

    2016-05-21

    X-ray absorption spectra of carbon, silicon, germanium, and sulfur compounds have been investigated by means of damped four-component density functional response theory. It is demonstrated that a reliable description of relativistic effects is obtained at both K- and L-edges. Notably, an excellent agreement with experimental results is obtained for L2,3-spectra-with spin-orbit effects well accounted for-also in cases when the experimental intensity ratio deviates from the statistical one of 2 : 1. The theoretical results are consistent with calculations using standard response theory as well as recently reported real-time propagation methods in time-dependent density functional theory, and the virtues of different approaches are discussed. As compared to silane and silicon tetrachloride, an anomalous error in the absolute energy is reported for the L2,3-spectrum of silicon tetrafluoride, amounting to an additional spectral shift of ∼1 eV. This anomaly is also observed for other exchange-correlation functionals, but it is seen neither at other silicon edges nor at the carbon K-edge of fluorine derivatives of ethene. Considering the series of molecules SiH4-XFX with X = 1, 2, 3, 4, a gradual divergence from interpolated experimental ionization potentials is observed at the level of Kohn-Sham density functional theory (DFT), and to a smaller extent with the use of Hartree-Fock. This anomalous error is thus attributed partly to difficulties in correctly emulating the electronic structure effects imposed by the very electronegative fluorines, and partly due to inconsistencies in the spurious electron self-repulsion in DFT. Substitution with one, or possibly two, fluorine atoms is estimated to yield small enough errors to allow for reliable interpretations and predictions of L2,3-spectra of more complex and extended silicon-based systems. PMID:27136720

  16. Silicone metalization

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  17. Silicone metalization

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  18. Use of silicon in liquid sintered silicon nitrides and sialons

    DOEpatents

    Raj, R.; Baik, S.

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  19. Use of silicon in liquid sintered silicon nitrides and sialons

    DOEpatents

    Raj, Rishi; Baik, Sunggi

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  20. Group-IV semiconductor compounds

    SciTech Connect

    Berding, M.A.; Sher, A.; van Schilfgaarde, M.

    1997-08-01

    Properties of ordered group-IV compounds containing carbon, silicon, and germanium are calculated within the local density approximation. Twenty-seven fully relaxed compounds represented by seven different compound structures are compared and, with the exception of SiC, all compounds are found to be metastable. Two trends emerge: carbon-germanium bonds are disfavored, and compounds that have carbon on a common sublattice are the least unbound because of their relatively low strain. When carbon shares a sublattice with silicon or germanium, the large strain results in a narrowing of the band gap, and in some cases the compound is metallic. The most promising structures with the lowest excess energy contain carbon on one sublattice and although they do not lattice match to silicon, they match rather well to silicon carbide. {copyright} {ital 1997} {ital The American Physical Society}

  1. Replacement of silicone polymer A with silicone polymer B and the subsequent characterization of the new cellular silicone materials

    SciTech Connect

    Schneider, J.W.

    1994-04-01

    The purpose of this project is to replace silicone polymer A with silicone polymer B produced by Vendor B. Silicone polymer B and the resulting B-50 cellular silicone have been used to produce cushions for the W87 program. Approximately 5.5 years of stress relaxation aging study data as well as actual part surveillance data have been collected, characterizing the stockpile life performance of the B-50 cellular silicone cushion material. Process characterization of new cellular silicone materials as a result of replacing silicone polymer A with silicone polymer B has been completed. Load deflection requirements for the new cellular silicone materials based on silicone polymer B have been met. The silicone polymer B based cellular silicone materials must be compounded at densities of approximately 0.03 g/cm{sup 3} less than the silicone polymer A based cellular silicone materials in order to achieve the same load deflection requirements has also been demonstrated. The change in silicone polymers from A to B involved a decrease in volatile content as well as a decrease in part shrinkage.

  2. Silicon applications in photonics

    NASA Astrophysics Data System (ADS)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  3. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, Ken

    1994-01-01

    An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

  4. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1992-01-01

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  5. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1994-12-27

    An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

  6. Liquid-phase-sintering phenomena of non-oxide silicon compounds. Technical progress report, 1 July 1979-29 February 1980

    SciTech Connect

    Clarke, D.R.; Lange, F.F.

    1980-03-01

    The noncrystalline intergranular phase in three hot-pressed silicon nitride alloys containing MgO has been found to have a composition close to the SiO/sub 2/-Mg/sub 2/SiO/sub 3/ tie line. This finding of a composition removed from the ternary eutectic in the Si/sub 3/N/sub 4/-Si/sub 2/N/sub 2/O-Mg/sub 2/SiO/sub 4/ phase field suggests that phase equilibrium during hot-pressing is not totally attained despite the x-ray diffraction evidence that the bulk of the materials has reached equilibrium. The exact composition of the noncrystalline phase varies from one location to another in the microstructure and incorporates impurities including Ca, Al, and Cl. These impurities will unquestionably affect the high temperature properties of the intergranular phase.

  7. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOEpatents

    Yunker, Wayne H.; Christiansen, David W.

    1987-01-01

    A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  8. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOEpatents

    Yunker, Wayne H.; Christiansen, David W.

    1987-05-05

    A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  9. High-temperature- and high-pressure-induced formation of the Laves-phase compound XeS2

    NASA Astrophysics Data System (ADS)

    Yan, Xiaozhen; Chen, Yangmei; Xiang, Shikai; Kuang, Xiaoyu; Bi, Yan; Chen, Haiyan

    2016-06-01

    We explore the reactivity of xenon with sulfur under high pressure, using unbiased structure searching techniques combined with first-principles calculations, which identify a stable XeS2 compound crystallized in a Laves phase with hypercoordinated (16-fold) Xe at 191 GPa and 0 K. Taking the thermal effects into account, we find that increasing the temperature could further stabilize it. The formation of XeS2 is a consequence of pressure-induced charge transfer from Xe to S atoms and the delocalization of Xe 5 p and S 3 p electrons. Meanwhile, the stabilization into a Laves phase of XeS2 is the result of delocalized chemical bonding and the need for optimum structure packing. The present discussion of the formation mechanism in XeS2 is general, and conclusions can be used to understand the formation of other Laves-phase compounds and the Xe chemistry that allows closed-shell Xe to participate in chemical reactions.

  10. Ionization of the Nitroaromatic Compounds in an Ion Mobility Spectrometer with an Ion Source based on Porous Silicon Under Laser Irradiation

    NASA Astrophysics Data System (ADS)

    Martynov, Igor; Kuzishchin, Yury; Dovzhenko, Dmitriy; Kotkovskii, Genadii; Chistyakov, Alexander

    Nowadays surface assisted laser desorption/ionization is widely used in different analytical methods. Some of the most interest methods are based on laser irradiation of nanostructured surfaces, porous silicon (pSi) in particular. This method already proved itself in mass spectrometry due to the combination of high sensitivity and possibility of investigation of small molecules because of the absence of the influence of a substrate on the ion signal. In this work we present summarized results of our investigations dedicated to the use of the surface assisted laser desorption/ionization on pSi in ion mobility spectrometry (IMS), which is one of the most promising analytical methods in the area of fast detection of low concentrations of organic molecules. We use trinitrotoluene (TNT) as a substance to be investigated. Obtained results show that TNT ionization mechanism under laser irradiation is complicated and relates both to the electron emission process from the pSi surface and subsequent ion-molecular reactions in gas phase and to the surface proton transfer as well.

  11. Syntheses and studies of organosilicon compounds

    SciTech Connect

    Xie, R.

    1999-02-12

    The syntheses of polycarbosilanes and polysilanes as silicon carbide ceramic precursors have been active research areas in the Barton Research Group. In this thesis, the work is focused on the preparation of polycarbosilanes and polysilanes as stoichiometric silicon carbide precursor polymers. The syntheses of the precursor polymers are discussed and the conversions of these precursors to silicon carbide via pyrolysis are reported. The XRD pattern and elemental analyses of the resulting silicon carbide ceramics are presented. Silicon monoxide is an important intermediate in the production of silicon metal. The existence of silicon monoxide in gap phase has been widely accepted. In the second part of this thesis, the generation of gaseous silicon monoxide in four different reactors and the reactions of gaseous silicon monoxide towards organic compounds are discussed.

  12. Vinyl ether silicones

    SciTech Connect

    Herzig, C.; Dauth, J.; Deubzer, B.; Weis, J.

    1995-12-01

    Siloxanes with vinyl ether groups are prepared by hydrosilylation reaction of dihydrosiloxanes with divinyl ethers in excess. Different stoichiometry, produces linear copolymers of different viscosities and double bond concentrations always with an active vinyl ether group at each chain end. Polymerisations triggered by UV light were done with mixtures of these compounds and a series of onium salts. Very fast cure is observed even with low doses at 290 nm. V.E. silicones are found to cure essentially quantitative. The comparison with other highly reactive cationic monomers revealed that compounds are among the fastest curing prepolymers in cationic chemistry.

  13. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    NASA Astrophysics Data System (ADS)

    Agosto, William N.

    1993-03-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  14. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    NASA Technical Reports Server (NTRS)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  15. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  16. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOEpatents

    Raj, Rishi; Baik, Sunggi

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  17. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOEpatents

    Raj, R.; Baik, S.

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  18. Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum

    NASA Technical Reports Server (NTRS)

    Kuramoto, N.; Takiguchi, H.

    1984-01-01

    The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed. The reaction temperature to produce the powder containing 40% of 2H-type silicon carbide is set at above 1550 degrees C in an atmosphere of aluminum or aluminum compounds and nitrogen gas or an antioxidation atmosphere containing nitrogen gas. The mixture ratio of silicon dioxide and carbon powder is 0.55 - 1:2.0 and the contents of aluminum or aluminum compounds within silicon dioxide is less than 3% in weight.

  19. Quantitation of buried contamination by use of solvents. [degradation of silicone polymers by amine solvents

    NASA Technical Reports Server (NTRS)

    Pappas, S. P.; Hsiao, Y. C.; Hill, L. W.

    1973-01-01

    Spore recovery form cured silicone potting compounds using amine solvents to degrade the cured polymers was investigated. A complete list of solvents and a description of the effect of each on two different silicone polymers is provided.

  20. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOEpatents

    Yunker, W.H.; Christiansen, D.W.

    1983-11-25

    This patent discloses a method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  1. Modified silicon carbide whiskers

    DOEpatents

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  2. Modified silicon carbide whiskers

    DOEpatents

    Tiegs, Terry N.; Lindemer, Terrence B.

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  3. Silicon microdosimetry.

    PubMed

    Agosteo, Stefano; Pola, Andrea

    2011-02-01

    Silicon detectors are being studied as microdosemeters since they can provide sensitive volumes of micrometric dimensions. They can be applied for assessing single-event effects in electronic instrumentation exposed to complex fields around high-energy accelerators or in space missions. When coupled to tissue-equivalent converters, they can be used for measuring the quality of radiation therapy beams or for dosimetry. The use of micrometric volumes avoids the contribution of wall effects to the measured spectra. Further advantages of such detectors are their compactness, cheapness, transportability and a low sensitivity to vibrations. The following problems need to be solved when silicon devices are used for microdosimetry: (i) the sensitive volume has to be confined in a region of well-known dimensions; (ii) the electric noise limits the minimum detectable energy; (iii) corrections for tissue-equivalency should be made; (iv) corrections for shape equivalency should be made when referring to a spherical simulated site of tissue; (v) the angular response should be evaluated carefully; (vi) the efficiency of a single detector of micrometric dimensions is very poor and detector arrays should be considered. Several devices have been proposed as silicon microdosemeters, based on different technologies (telescope detectors, silicon on insulator detectors and arrays of cylindrical p-n junctions with internal amplification), in order to satisfy the issues mentioned above. PMID:21112892

  4. Silicon surface passivation by silicon nitride deposition

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.

    1984-01-01

    Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

  5. INSTRUMENTS AND METHODS OF INVESTIGATION: Impurity ion implantation into silicon single crystals: efficiency and radiation damage

    NASA Astrophysics Data System (ADS)

    Vavilov, V. S.; Chelyadinskii, Aleksei R.

    1995-03-01

    The ion implantation method is analysed from the point of view of its efficiency as a technique for doping silicon with donor and acceptor impurities, for synthesising silicon-based compounds and for producing gettering layers and optoelectronic structures. The introduction, agglomeration, and annealing of radiation-produced defects in ion-implanted silicon are considered. The role of interstitial defects in radiation-related defect formation is estimated. Mechanisms of athermal migration of silicon atoms in the silicon lattice are analysed.

  6. A general classification of silicon utilizing organisms

    NASA Astrophysics Data System (ADS)

    Das, P.; Das, S.

    2010-12-01

    Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges

  7. Metalloid compounds as drugs

    PubMed Central

    Sekhon, B. S.

    2013-01-01

    The six elements commonly known as metalloids are boron, silicon, germanium, arsenic, antimony, and tellurium. Metalloid containing compounds have been used as antiprotozoal drugs. Boron-based drugs, the benzoxaboroles have been exploited as potential treatments for neglected tropical diseases. Arsenic has been used as a medicinal agent and arsphenamine was the main drug used to treat syphilis. Arsenic trioxide has been approved for the treatment of acute promyelocytic leukemia. Pentavalent antimonials have been the recommended drug for visceral leishmaniasis and cutaneous leishmaniasis. Tellurium (IV) compounds may have important roles in thiol redox biological activity in the human body, and ammonium trichloro (dioxoethylene-O, O’-)tellurate (AS101) may be a promising agent for the treatment of Parkinson’s disease. Organosilicon compounds have been shown to be effective in vitro multidrug-resistance reverting agents. PMID:24019824

  8. Reversible transformation of a stable monomeric silicon(II) compound into a stable disilene by phase transfer: experimental and theoretical studies of the system {[(Me3Si)2N](Me5C5)Si}n with n = 1,2.

    PubMed

    Jutzi, Peter; Mix, Andreas; Neumann, Beate; Rummel, Britta; Schoeller, Wolfgang W; Stammler, Hans-Georg; Rozhenko, A B

    2009-09-01

    The salt (eta(5)-pentamethylcyclopentadienyl)silicon(II) tetrakis(pentafluorophenyl)borate (5) reacts at -78 degrees C with lithium bis(trimethylsilyl)amide in dimethoxyethane (DME) as solvent to give quantitatively the compound [bis(trimethylsilyl)amino][pentamethylcyclopentadienyl]silicon(II) 6A in the form of a colorless viscous oil. The reaction performed at -40 degrees C leads to the silicon(IV) compound 7, the formal oxidative addition product of 6A with DME. Cycloaddition is observed in the reaction of 6A with 2,3-dimethylbutadiene to give the silicon(IV) compound 8. Upon attempts to crystallize 6A from organic solvents such as hexane, THF, or toluene, the deep yellow compound trans-1,2-bis[bis(trimethylsilyl)amino]-1,2-bis(pentamethylcyclopentadienyl)disilene (6B), the formal dimer of 6A, crystallizes from the colorless solution, but only after several days or even weeks. Upon attempts to dissolve the disilene 6B in the described organic solvents, a colorless solution is obtained after prolonged vigorous shaking or ultrasound treatment. From this solution, pure 6A can be recovered after solvent evaporation. This transformation process can be repeated several times. In a mass spectroscopic investigation of 6B, Si=Si bond cleavage is observed to give the molecular ion with the composition of 6A as the fragment with the highest mass. The X-ray crystal structure analysis of the disilene 6B supports a molecule with a short Si=Si bond (2.168 A) with efficiently packed, rigid sigma-bonded cyclopentadienyl substituents and silylamino groups. The conformation of the latter does not allow electron donation to the central silicon atom. Theoretical calculations at the density functional level (RI-BP86 and B3LYP, TZVP basis set) confirm the structure of 6B and reveal for silylene 6A the presence of an eta(2)-bonded cyclopentadienyl ligand and of a silylamino group in a conformation that prevents electron back-donation. Further theoretical calculations for the silicon

  9. Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

    NASA Technical Reports Server (NTRS)

    Tanaka, Hidehiko

    1987-01-01

    A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

  10. Determination of silicon in petroleum products by ICP-AES

    SciTech Connect

    Salmon, S.G.; Williams, M.C.

    1994-12-31

    The determination of silicon in petroleum and related products is an important issue due to the effects it has in its various compound forms. Silicone fluids are used in many lubricants as foam inhibitors and serve a vital function as performance additives. Likewise, silicates are used in coolant formulations. The beneficial effects of these additives can be seen at very low treatment levels. Silicon can also occur as an unwanted contaminant in refined products as carryover of foam inhibitor used in refinery units or as silica deposited as fines from catalyst supports. Silicon compounds can poison refinery catalysts and their presence in certain products can ruin machinery. Traditionally, the presence of foam inhibitor in lubricants has been indicated by a foam test (ASTMD 8924P 146) rather than by spectroscopic determination of silicon. Aspects of determining silicon by inductively coupled plasma atomic emission spectroscopy in petroleum and related products will be presented.

  11. Crystalline Silicon Solar Cells

    NASA Astrophysics Data System (ADS)

    Green, Martin A.

    2015-10-01

    The following sections are included: * Overview * Silicon cell development * Substrate production * Cell processing * Cell costs * Opportunities for improvement * Silicon-supported thin films * Summary * Acknowledgement * References

  12. Emerging heterogeneous integrated photonic platforms on silicon

    NASA Astrophysics Data System (ADS)

    Fathpour, Sasan

    2015-05-01

    Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with

  13. High performance compound semiconductor SPAD arrays

    NASA Astrophysics Data System (ADS)

    Harmon, Eric S.; Naydenkov, Mikhail; Bowling, Jared

    2016-05-01

    Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 - 25 microns, with thousands of SPADs per array.

  14. Highly crosslinked silicon polymers for gas chromatography columns

    NASA Technical Reports Server (NTRS)

    Shen, Thomas C. (Inventor)

    1994-01-01

    A new highly crosslinked silicone polymer particle for gas chromatography application and a process for synthesizing such copolymer are described. The new copolymer comprises vinyltriethoxysilane and octadecyltrichlorosilane. The copolymer has a high degree of crosslinking and a cool balance of polar to nonpolar sites in the porous silicon polymer assuring fast separation of compounds of variable polarity.

  15. Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments

    DOEpatents

    Brun, Milivoj Konstantin; Luthra, Krishan Lal

    2003-01-01

    While silicon-containing ceramics or ceramic composites are prone to material loss in combustion gas environments, this invention introduces a method to prevent or greatly reduce the thickness loss by injecting directly an effective amount, generally in the part per million level, of silicon or silicon-containing compounds into the combustion gases.

  16. Neutron absorbing room temperature vulcanizable silicone rubber compositions

    DOEpatents

    Zoch, Harold L.

    1979-11-27

    A neutron absorbing composition comprising a one-component room temperature vulcanizable silicone rubber composition or a two-component room temperature vulcanizable silicone rubber composition in which the composition contains from 25 to 300 parts by weight based on the base silanol or vinyl containing diorganopolysiloxane polymer of a boron compound or boron powder as the neutron absorbing ingredient. An especially useful boron compound in this application is boron carbide.

  17. Compound matrices

    NASA Astrophysics Data System (ADS)

    Kravvaritis, Christos; Mitrouli, Marilena

    2009-02-01

    This paper studies the possibility to calculate efficiently compounds of real matrices which have a special form or structure. The usefulness of such an effort lies in the fact that the computation of compound matrices, which is generally noneffective due to its high complexity, is encountered in several applications. A new approach for computing the Singular Value Decompositions (SVD's) of the compounds of a matrix is proposed by establishing the equality (up to a permutation) between the compounds of the SVD of a matrix and the SVD's of the compounds of the matrix. The superiority of the new idea over the standard method is demonstrated. Similar approaches with some limitations can be adopted for other matrix factorizations, too. Furthermore, formulas for the n - 1 compounds of Hadamard matrices are derived, which dodge the strenuous computations of the respective numerous large determinants. Finally, a combinatorial counting technique for finding the compounds of diagonal matrices is illustrated.

  18. Upgrading Metallurgical-Grade Silicon

    NASA Technical Reports Server (NTRS)

    Woerner, L. M.; Moore, E. B.

    1985-01-01

    Closed-loop process produces semiconductor-grade silicon. Metallurgical-grade silicon converted to ultrapure silicon by reacting with hydrogen and silicon tetrahalide to form trihalosilane, purifying this intermediate and again decomposing to high purity silicon in third stage. Heterogeneously and homogeneously nucleated polycrystalline silicon used in semiconductor device applications and in silicon photovoltaic solar cell fabrication.

  19. Silicon Micromachining

    NASA Astrophysics Data System (ADS)

    Elwenspoek, Miko; Jansen, Henri V.

    2004-08-01

    This comprehensive book provides an overview of the key techniques used in the fabrication of micron-scale structures in silicon. Recent advances in these techniques have made it possible to create a new generation of microsystem devices, such as microsensors, accelerometers, micropumps, and miniature robots. The authors underpin the discussion of each technique with a brief review of the fundamental physical and chemical principles involved. They pay particular attention to methods such as isotropic and anisotropic wet chemical etching, wafer bonding, reactive ion etching, and surface micromachining. There is a special section on bulk micromachining, and the authors also discuss release mechanisms for movable microstructures. The book is a blend of detailed experimental and theoretical material, and will be of great interest to graduate students and researchers in electrical engineering and materials science whose work involves the study of micro-electromechanical systems (MEMS).

  20. Preparation of Graphene Encapsulated Silicon Nanoball.

    PubMed

    Kim, Huijin; So, Deasup; Park, Sungjin; Huh, Hoon

    2016-02-01

    Concerning application of graphene, a lot of efforts have been made to improve performance of nanomaterials in many fields, such as electric and electronic devices. Some examples are preparation of 3-dimension structured nanomaterials like nanoballs by CVD process and hybridizing with silicon. These graphene-based materials are proven to be available for secondary battery, EMI and ACF in electronics. Especially, some research has shown that they were very effective to enhance safety and volumetric capacity when they were used as anode materials of secondary battery. Although graphite and its compound with metal have been used as an anode material due to their high stability and reversibility, it still has lower charge capacity. On the contrary, silicon is known as a material which increases the charge capacity up to four times, compared with carbon-based materials, but it has lower stability and reversibility. For that reason, a few researchers just started to improve the charge capacity by hybridization of carbon-based material with silicon. In this paper, we prepared nanocarbon based material which has a new structure of graphene encapsulated silicon nanoball as an anode material which is applicable to high-capacity secondary battery. In order to form a graphene encapsulated silicon nanoballs, the polystyrene encapsulated silicon nanoballs were prepared by emulsion polymerization of styrene monomer with silicon nanoparticles. The resulting nanoballs were immersed in iron chloride solution and then dried. Finally they were treated in high temperature through CVD and etched by hydrogen chloride. Morphology of the graphene encapsulated silicon nanoballs was observed by the field emission scanning electron microscope (FESEM) and the field emission transmission electron microscope (FETEM) to search for core-shell structured nanoball. Spherical structure of graphene encapsulated silicon nanoball was investigated by the Raman, the X-ray Photoelectron Spectroscopy to

  1. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  2. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  3. Preparation and characterization of silicone rubber/functionalized carbon nanotubes composites via in situ polymerization.

    PubMed

    Kim, Hun-Sik; Kwon, Soon-Min; Lee, Kwang Hee; Yoon, Jin-San; Jin, Hyoung-Joon

    2008-10-01

    The dispersion of the nanometer-sized multiwalled carbon nanotubes (MWCNTs) in a silicone matrix leads to a marked improvement in the properties of the silicone based composite. In this study, silicone rubber/MWCNTs nanocomposite was successfully prepared by functionalizing MWCNTs with silane compound. This allowed a homogeneous dispersion of functionalized MWCNTs in the silicone matrix. The morphology of functionalized MWCNTs was observed using transmission electron microscopy and scanning electron microscopy with energy dispersive spectrometer. The silicone rubber/functionalized MWCNTs (1 wt%) composites showed that the tensile strength and modulus of the composites improved dramatically by about 50% and 28%, respectively, compared with silicone rubber. PMID:19198496

  4. Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

    NASA Technical Reports Server (NTRS)

    Ferguson, Frank T.; Nuth, Joseph A., III

    2012-01-01

    The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

  5. Purified silicon production system

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  6. Process for producing silicon

    DOEpatents

    Olson, Jerry M.; Carleton, Karen L.

    1984-01-01

    A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  7. Polybenzimidazole compounds

    DOEpatents

    Klaehn, John R.; Peterson, Eric S.; Wertsching, Alan K.; Orme, Christopher J.; Luther, Thomas A.; Jones, Michael G.

    2010-08-10

    A PBI compound that includes imidazole nitrogens, at least a portion of which are substituted with an organic-inorganic hybrid moiety. At least 85% of the imidazole nitrogens may be substituted. The organic-inorganic hybrid moiety may be an organosilane moiety, for example, (R)Me.sub.2SiCH.sub.2--, where R is selected from among methyl, phenyl, vinyl, and allyl. The PBI compound may exhibit similar thermal properties in comparison to the unsubstituted PBI. The PBI compound may exhibit a solubility in an organic solvent greater than the solubility of the unsubstituted PBI. The PBI compound may be included in separatory media. A substituted PBI synthesis method may include providing a parent PBI in a less than 5 wt % solvent solution. Substituting may occur at about room temperature and/or at about atmospheric pressure. Substituting may use at least five equivalents in relation to the imidazole nitrogens to be substituted or, preferably, about fifteen equivalents.

  8. Electrodeposition of molten silicon

    DOEpatents

    De Mattei, Robert C.; Elwell, Dennis; Feigelson, Robert S.

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  9. Tunable, antibacterial activity of silicone polyether surfactants.

    PubMed

    Khan, Madiha F; Zepeda-Velazquez, Laura; Brook, Michael A

    2015-08-01

    Silicone surfactants are used in a variety of applications, however, limited data is available on the relationship between surfactant structure and biological activity. A series of seven nonionic, silicone polyether surfactants with known structures was tested for in vitro antibacterial activity against Escherichia coli BL21. The compounds varied in their hydrophobic head, comprised of branched silicone structures with 3-10 siloxane linkages and, in two cases, phenyl substitution, and hydrophilic tail of 8-44 poly(ethylene glycol) units. The surfactants were tested at three concentrations: below, at, and above their Critical Micelle Concentrations (CMC) against 5 concentrations of E. coli BL21 in a three-step assay comprised of a 14-24h turbidometric screen, a live-dead stain and viable colony counts. The bacterial concentration had little effect on antibacterial activity. For most of the surfactants, antibacterial activity was higher at concentrations above the CMC. Surfactants with smaller silicone head groups had as much as 4 times the bioactivity of surfactants with larger groups, with the smallest hydrophobe exhibiting potency equivalent to sodium dodecyl sulfate (SDS). Smaller PEG chains were similarly associated with higher potency. These data link lower micelle stability and enhanced permeability of smaller silicone head groups to antibacterial activity. The results demonstrate that simple manipulation of nonionic silicone polyether structure leads to significant changes in antibacterial activity. PMID:26057244

  10. Liquid phase sintering of silicon carbide

    DOEpatents

    Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

    1989-05-09

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

  11. Liquid phase sintering of silicon carbide

    DOEpatents

    Cutler, Raymond A.; Virkar, Anil V.; Hurford, Andrew C.

    1989-01-01

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

  12. The Electrochemical Fluorination of Organosilicon Compounds

    NASA Technical Reports Server (NTRS)

    Seaver, Robert E.

    1961-01-01

    The electrochemical fluorination of tetramethylsilane, hexamethyl-disiloxane, diethyldichlorosilane, amyltrichlorosilane, and phenyltri-chlorosilane was conducted in an Inconel cell equipped with nickel electrodes. A potential of approximately 5.0 volts and a current of approximately 1.0 ampere were used for the electrolysis reaction. In all cases the fluorinations resulted in considerable scission of the carbon-silicon bonds yielding hydrogen and the various fluorinated decomposition products; no fluoroorganosilicon compounds were identified. The main decomposition products were silicon tetrafluoride, the corresponding fluorinated carbon compounds, and the various organofluorosilanes. It is suggested that this is due to the nucleophilic attack of the fluoride ion (or complex fluoride ion) on the carbon-silicon bond.

  13. Glass-silicon column

    DOEpatents

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  14. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M.

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  15. Silicone wristbands as personal passive samplers.

    PubMed

    O'Connell, Steven G; Kincl, Laurel D; Anderson, Kim A

    2014-03-18

    Active-sampling approaches are commonly used for personal monitoring, but are limited by energy usage and data that may not represent an individual's exposure or bioavailable concentrations. Current passive techniques often involve extensive preparation, or are developed for only a small number of targeted compounds. In this work, we present a novel application for measuring bioavailable exposure with silicone wristbands as personal passive samplers. Laboratory methodology affecting precleaning, infusion, and extraction were developed from commercially available silicone, and chromatographic background interference was reduced after solvent cleanup with good extraction efficiency (>96%). After finalizing laboratory methods, 49 compounds were sequestered during an ambient deployment which encompassed a diverse set of compounds including polycyclic aromatic hydrocarbons (PAHs), consumer products, personal care products, pesticides, phthalates, and other industrial compounds ranging in log K(ow) from -0.07 (caffeine) to 9.49 (tris(2-ethylhexyl) phosphate). In two hot asphalt occupational settings, silicone personal samplers sequestered 25 PAHs during 8- and 40-h exposures, as well as 2 oxygenated-PAHs (benzofluorenone and fluorenone) suggesting temporal sensitivity over a single work day or week (p < 0.05, power =0.85). Additionally, the amount of PAH sequestered differed between worksites (p < 0.05, power = 0.99), suggesting spatial sensitivity using this novel application. PMID:24548134

  16. Silicone Wristbands as Personal Passive Samplers

    PubMed Central

    2014-01-01

    Active-sampling approaches are commonly used for personal monitoring, but are limited by energy usage and data that may not represent an individual’s exposure or bioavailable concentrations. Current passive techniques often involve extensive preparation, or are developed for only a small number of targeted compounds. In this work, we present a novel application for measuring bioavailable exposure with silicone wristbands as personal passive samplers. Laboratory methodology affecting precleaning, infusion, and extraction were developed from commercially available silicone, and chromatographic background interference was reduced after solvent cleanup with good extraction efficiency (>96%). After finalizing laboratory methods, 49 compounds were sequestered during an ambient deployment which encompassed a diverse set of compounds including polycyclic aromatic hydrocarbons (PAHs), consumer products, personal care products, pesticides, phthalates, and other industrial compounds ranging in log Kow from −0.07 (caffeine) to 9.49 (tris(2-ethylhexyl) phosphate). In two hot asphalt occupational settings, silicone personal samplers sequestered 25 PAHs during 8- and 40-h exposures, as well as 2 oxygenated-PAHs (benzofluorenone and fluorenone) suggesting temporal sensitivity over a single work day or week (p < 0.05, power =0.85). Additionally, the amount of PAH sequestered differed between worksites (p < 0.05, power = 0.99), suggesting spatial sensitivity using this novel application. PMID:24548134

  17. Multipurpose Compound

    NASA Technical Reports Server (NTRS)

    1983-01-01

    Specially formulated derivatives of an unusual basic compound known as Alcide may be the answer to effective treatment and prevention of the disease bovine mastitis, a bacterial inflammation of a cow's mammary gland that results in loss of milk production and in extreme cases, death. Manufactured by Alcide Corporation the Alcide compound has killed all tested bacteria, virus and fungi, shortly after contact, with minimal toxic effects on humans or animals. Alcide Corporation credits the existence of the mastitis treatment/prevention products to assistance provided the company by NERAC, Inc.

  18. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2001-01-01

    Seawater and natural brines accounted for about 63% of US magnesium compounds production during 2000. Premier Services in Florida, Dow Chemical in Michigan, Martin Marietta Magnesia Specialties, and Rohm & Haas recovered dead-burned and caustic-calcined magnesias from seawater. And Premier Services' recoveries, in Nevada, were from magnasite.

  19. A Comprehensive Evaluation of the Performance and Materials Chemistry of a Sililcone-Based Replicating Compound

    SciTech Connect

    Kalan, Michael

    2014-05-01

    The objective of this project was to characterize the performance and chemistry of a siliconebased replicating compound. Some silicone replicating compounds are useful for critical inspection of surface features. Common applications are for examining micro-cracks, surface pitting, scratching, and other surface defects. Materials characterization techniques were used: FTIR, XPS, ToF-SIMS, AFM, and Confocal Microscopy to evaluate the replicating compound. These techniques allowed for the characterization and verification of the resolution capabilities and surface contamination that may be a result of using the compound. FTIR showed the compound is entirely made from silicone constituents. The AFM and Confocal Microscopy results showed the compound does accurately replicate the surface features to the claimed resolution. XPS and ToF-SIMS showed there is a silicone contaminant layer left behind when a cured replica is peeled off a surface. Attempts to clean off the contamination could not completely remove all silicone residues.

  20. Silicone Contamination Camera for Developed for Shuttle Payloads

    NASA Technical Reports Server (NTRS)

    1996-01-01

    On many shuttle missions, silicone contamination from unknown sources from within or external to the shuttle payload bay has been a chronic problem plaguing experiment payloads. There is currently a wide range of silicone usage on the shuttle. Silicones are used to coat the shuttle tiles to enhance their ability to shed rain, and over 100 kg of RTV 560 silicone is used to seal white tiles to the shuttle surfaces. Silicones are also used in electronic components, potting compounds, and thermal control blankets. Efforts to date to identify and eliminate the sources of silicone contamination have not been highly successful and have created much controversy. To identify the sources of silicone contamination on the space shuttle, the NASA Lewis Research Center developed a contamination camera. This specially designed pinhole camera utilizes low-Earth-orbit atomic oxygen to develop a picture that identifies sources of silicone contamination on shuttle-launched payloads. The volatile silicone species travel through the aperture of the pinhole camera, and since volatile silicone species lose their hydrocarbon functionalities under atomic oxygen attack, the silicone adheres to the substrate as SiO_x. This glassy deposit should be spatially arranged in the image of the sources of silicone contamination. To view the contamination image, one can use ultrasensitive thickness measurement techniques, such as scanning variable-angle ellipsometry, to map the surface topography of the camera's substrate. The demonstration of a functional contamination camera would resolve the controversial debate concerning the amount and location of contamination sources, would allow corrective actions to be taken, and would demonstrate a useful tool for contamination documentation on future shuttle payloads, with near negligible effect on cost and weight.

  1. Incorporation of capsaicin in silicone coatings for enhanced antifouling performance

    NASA Astrophysics Data System (ADS)

    Reddy Jaggari, Karunakar; Zhang Newby, Bi-Min

    2002-03-01

    Successful use of capsaicin as insect and animal repellant propelled us to use it as a possible antifouling agent. Its non-toxic, non-biocidal, non-leaching properties make it a viable alternative to organotin compounds. In order to optimize the anti-fouling performance of the coating, silicone, the most effective foul-release marine coating, was chosen as the carrier. We have incorporated capsaicin into silicone coating, by both bulk entrapment and surface immobilization. Contact angle measurements on capsaicin-incorporated silicone exhibited an increase in wettability, owing to the presence of capsaicin. FTIR study further confirmed the incorporation of capsaicin in silicone. Bacterial attachment studies were conducted using lake Erie water. While bacteria liberally inhabited the control coating, their presence on the capsaicin-incorporated coating was found to be minimal. These preliminary studies indicate that capsaicin incorporated silicone could be a viable environment friendly alternative to currently used antifouling coatings.

  2. Carbonitriding of silicon using plasma focus device

    SciTech Connect

    Jabbar, S.; Khan, I. A.; Ahmad, R.; Zakaullah, M.; Pan, J. S.

    2009-03-15

    Carbonitride thin films have been deposited on silicon substrate by the irradiation of energetic nitrogen ions emanated from dense plasma focus device. The carbon ions are ablated by the irradiation of relativistic electrons from the insert material (graphite) placed at the anode tip. The x-ray diffraction analysis demonstrates that a polycrystalline thin film consisting of various compounds such as Si{sub 3}N{sub 4}, SiC, and C{sub 3}N{sub 4} is formed on the silicon (100) substrate. Crystallinity of different compounds decreases with the increase in angular positions (0 deg., 10 deg., and 20 deg. ). Raman spectroscopy shows the appearance of graphitic and disordered bands with silicon nitride and silicon carbide indicating the formation of carbonitride. Raman spectra also indicate that broadening of bands increases with the increase in focus deposition shots, leading to the amorphization of the thin film. The amorphization of the thin films depends on the ion energy flux as well as on the sample angular position. The scanning electron microscopy exhibits the damaging of the substrate surface at 0 deg. angular position. The microstructure shows the tubular shape for higher ion dose (40 focus shots). At 10 deg. angular position, a two phase phenomenon is observed with the ordered phase in the solid solution. A smooth and uniform surface morphology showing a small cluster is observed for the 20 deg. angular position.

  3. Silicon micro-mold

    DOEpatents

    Morales, Alfredo M.

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  4. [Silicone breast implants].

    PubMed

    Nielsen, M; Brandt, B; Breiting, V B; Christensen, L H; Thomsen, J L

    1989-12-18

    A brief review of the use of silicone breast implants, their structure, methods of implantation and complications is presented. Acute complications are rare, being mainly infection and hematoma. Long-term complications, on the contrary, are common, consisting mainly of capsular contracture around the prosthesis with subsequent pain and deformation of the breast. More rarely silicone granulomas form, and prosthesis rupture or herniation occurs. The importance of silicone leakage for these complications is discussed separately as well as the treatment of and prevention of capsular contracture and demonstration of silicone in tissue. A critical attitude towards the use of silicone breast implants, when these are used for purely cosmetic purposes, is recommended at present. New improved types of silicone breast implants are currently being tested clinically. PMID:2692262

  5. Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface

    SciTech Connect

    Carlotti, J.-F.; Touboul, A.D.; Ramonda, M.; Caussanel, M.; Guasch, C.; Bonnet, J.; Gasiot, J.

    2006-01-23

    Thin silicon oxide layers on silicon substrates are investigated by scanning probe microscopy before and after irradiation with 210 MeV Au+ ions. After irradiation and complete chemical etching of the silicon oxide layer, silicon bumps grown on the silicon surface are observed. It is shown that each impinging ion induces one silicon bump at the interface. This observation is consistent with the thermal spike theory. Ion energy loss is transferred to the oxide and induces local melting. Silicon-bump formation is favored when the oxide and oxide-silicon interface are silicon rich.

  6. Mist Ejection of Silicon Microparticle Using a Silicon Nozzle

    NASA Astrophysics Data System (ADS)

    Yokoyama, Yoshinori; Murakami, Takaaki; Yoshida, Yukihisa; Itoh, Toshihiro

    The novel mist-jet technology using a silicon nozzle and a silicon reflector has been developed. Ejection of water mist containing the silicon microparticles is demonstrated. Impurities of the silicon microparticles ejected on the substrate are analyzed. It has been verified for the first time that the contamination is reduced by the silicon head. The silicon pattern drawn by the head is successfully formed.

  7. Heat-treatment effects in neutron transmutation doped epitaxial silicon

    SciTech Connect

    Cleland, J.W.

    1983-01-01

    Chemical vapor deposition (CVD) of silicon from a gaseous silicon compound onto a heated silicon substrate may be used to deposit an epitaxial SI layer and to obtain an electrical p-n junction. The dopant concentration in the epi-Si layer is a function of the gaseous dopant ion content, flow rate, temperature gradient, and any migration of impurities (autodoping) from the heated substrate. This technical note describes some results of carrier concentration, mobility, and resistivity measurements on small (0.5 cm/sup 2/) epi-Si samples using the van der Pauw (vdP) technique.

  8. Micromachined Silicon Waveguides

    NASA Technical Reports Server (NTRS)

    Mcgrath, William R.; Tai, Yu-Chong; Yap, Markus; Walker, Christopher K.

    1994-01-01

    Components that handle millimeter and submillimeter wavelengths fabricated conveniently. Micromachining rectangular waveguide involves standard steps of masking, etching, and deposition of metal on silicon. Parts made assembled into half-waveguide and finally into full waveguide. Silicon-micromachining approach enables simultaneous fabrication of several versions of waveguide, with variations in critical parameter, on single wafer of silicon. Performances of versions compared and optimized more quickly and at lower cost than is possible if different versions are fabricated sequentially, by conventional machining techniques.

  9. Highly porous silicon membranes fabricated from silicon nitride/silicon stacks.

    PubMed

    Qi, Chengzhu; Striemer, Christopher C; Gaborski, Thomas R; McGrath, James L; Fauchet, Philippe M

    2014-07-23

    Nanopore formation in silicon films has previously been demonstrated using rapid thermal crystallization of ultrathin (15 nm) amorphous Si films sandwiched between nm-thick SiO2 layers. In this work, the silicon dioxide barrier layers are replaced with silicon nitride, resulting in nanoporous silicon films with unprecedented pore density and novel morphology. Four different thin film stack systems including silicon nitride/silicon/silicon nitride (NSN), silicon dioxide/silicon/silicon nitride (OSN), silicon nitride/silicon/silicon dioxide (NSO), and silicon dioxide/silicon/silicon dioxide (OSO) are tested under different annealing temperatures. Generally the pore size, pore density, and porosity positively correlate with the annealing temperature for all four systems. The NSN system yields substantially higher porosity and pore density than the OSO system, with the OSN and NSO stack characteristics fallings between these extremes. The higher porosity of the Si membrane in the NSN stack is primarily due to the pore formation enhancement in the Si film. It is hypothesized that this could result from the interfacial energy difference between the silicon/silicon nitride and silicon/silicon dioxide, which influences the Si crystallization process. PMID:24623562

  10. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2003-01-01

    Seawater and natural brines accounted for about 60 percent of U.S. magnesium compounds production during 2002. Dead-burned and caustic-calcined magnesias were recovered from seawater by Premier Chemicals in Florida. They were also recovered from well brines in Michigan by Dow Chemical, Martin Marietta Magnesia Specialties and Rohm & Haas. And they were recovered from magnesite in Nevada by Premier Chemicals.

  11. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2006-01-01

    In 2005, seawater and natural brines accounted for 51% of US magnesium compounds production. World magnesia production was estimated to be 14.5 Mt. Most of the production came from China, North Korea, Russia and Turkey. Although no specific production figures are available, Japan and the United States are estimated to account for almost one-half of the world's capacity from seawater and brines.

  12. Silicon web process development

    NASA Technical Reports Server (NTRS)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  13. The CDFII Silicon Detector

    SciTech Connect

    Julia Thom

    2004-07-23

    The CDFII silicon detector consists of 8 layers of double-sided silicon micro-strip sensors totaling 722,432 readout channels, making it one of the largest silicon detectors in present use by an HEP experiment. After two years of data taking, we report on our experience operating the complex device. The performance of the CDFII silicon detector is presented and its impact on physics analyses is discussed. We have already observed measurable effects from radiation damage. These results and their impact on the expected lifetime of the detector are briefly reviewed.

  14. Micromachined silicon electrostatic chuck

    DOEpatents

    Anderson, Robert A.; Seager, Carleton H.

    1996-01-01

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  15. Micromachined silicon electrostatic chuck

    DOEpatents

    Anderson, R.A.; Seager, C.H.

    1996-12-10

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  16. Silicone-Rubber Tooling for Hollow Panels

    NASA Technical Reports Server (NTRS)

    Gallimore, F. H.

    1985-01-01

    Wave-free contour surface obtained by using flexible mold. Silicone-rubber layup tool, when used in conjunction with hard plastic laminating mold defining desired contour, produces panel with wave-free surface that accurately reproduces shape of mold. In addition to providing porous hollow-panel wing structure that acts as duct for transporting sucked boundary layer tooling, also used to fabricate high-strength lightweight door panels and any single-or compound-contour panel.

  17. Improved Cure-in-Place Silicone Adhesives

    NASA Technical Reports Server (NTRS)

    Blevins, C. E.; Sweet, J.; Gonzalez, R.

    1982-01-01

    Two improved cure-in-place silicone-elastomer-based adhesives have low thermal expansion and low thermal conductivity. Adhesives are flexible at low temperature and withstand high temperatures without disintegrating. New ablative compounds were initially developed for in-flight repair of insulating tile on Space Shuttle orbiter. Could find use in other applications requiring high-performance adhesives, such as sealants for solar collectors.

  18. Dianionic species with a bond consisting of two pentacoordinated silicon atoms

    NASA Astrophysics Data System (ADS)

    Kano, Naokazu; Miyake, Hideaki; Sasaki, Keishi; Kawashima, Takayuki; Mizorogi, Naomi; Nagase, Shigeru

    2010-02-01

    Silicon can form bonds to other tetracoordinated silicon atoms and these bonds form the framework of many organosilicon compounds and crystalline silicon. Silicon can also form a pentacoordinated anionic structure-a so-called `silicate'. No compounds containing a direct bond between two silicate moieties-`disilicates' where two silicate structures are combined in one species-have been reported because of the electronic repulsion between the anionic halves and difficulty preventing the release of anions. Here we report the synthesis of thermally stable and isolable disilicates by the reductive coupling reaction of a silane bearing two electron-withdrawing bidentate ligands. Two pentacoordinated silicons, positively charged despite the formal negative charge, constitute a single σ-bond and bind eight negatively charged atoms. They can be reversibly protonated, cleaving two Si-O bonds, to afford a tetracoordinated disilane. Their unique electronic properties could be promising for the construction of functional materials with silicon wire made up of silicate chains.

  19. Incorporation of dopant impurities into a silicon oxynitride matrix containing silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Ehrhardt, Fabien; Ulhaq-Bouillet, Corinne; Muller, Dominique; Slaoui, Abdelilah; Ferblantier, Gérald

    2016-05-01

    Dopant impurities, such as gallium (Ga), indium (In), and phosphorus (P), were incorporated into silicon-rich silicon oxynitride (SRSON) thin films by the ion implantation technique. To form silicon nanoparticles, the implanted layers were thermally annealed at temperatures up to 1100 °C for 60 min. This thermal treatment generates a phase separation of the silicon nanoparticles from the SRSON matrix in the presence of the dopant atoms. We report on the position of the dopant species within the host matrix and relative to the silicon nanoparticles, as well as on the effect of the dopants on the crystalline structure and the size of the Si nanoparticles. The energy-filtered transmission electron microscopy technique is thoroughly used to identify the chemical species. The distribution of the dopant elements within the SRSON compound is determined using Rutherford backscattering spectroscopy. Energy dispersive X-ray mapping coupled with spectral imaging of silicon plasmons was performed to spatially localize at the nanoscale the dopant impurities and the silicon nanoparticles in the SRSON films. Three different behaviors were observed according to the implanted dopant type (Ga, In, or P). The In-doped SRSON layers clearly showed separated nanoparticles based on indium, InOx, or silicon. In contrast, in the P-doped SRSON layers, Si and P are completely miscible. A high concentration of P atoms was found within the Si nanoparticles. Lastly, in Ga-doped SRSON the Ga atoms formed large nanoparticles close to the SRSON surface, while the Si nanoparticles were localized in the bulk of the SRSON layer. In this work, we shed light on the mechanisms responsible for these three different behaviors.

  20. Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

    NASA Technical Reports Server (NTRS)

    Cohen, R. A.; Wheeler, R. K. (Inventor)

    1974-01-01

    A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

  1. Wet-chemical systems and methods for producing black silicon substrates

    DOEpatents

    Yost, Vernon; Yuan, Hao-Chih; Page, Matthew

    2015-05-19

    A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

  2. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2010-01-01

    Seawater and natural brines accounted for about 40 percent of U.S. magnesium compounds production in 2009. Dead-burned magnesia was produced by Martin Marietta Magnesia Specialties from well brines in Michigan. Caustic-calcined magnesia was recovered from seawater by Premier Chemicals in Florida, from well brines in Michigan by Martin Marietta and from magnesite in Nevada by Premier Chemicals. Intrepid Potash-Wendover, and Great Salt Lake Minerals Corp. recovered magnesium chloride brines from the Great Salt Lake in Utah. Magnesium hydroxide was produced from seawater by SPI Pharma in Delaware and Premier Chemicals in Florida, and by Martin Marietta from its operation mentioned above.

  3. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2002-01-01

    Seawater and natural brines accounted for about 60% of US magnesium compounds production in 2001. Dead-burned and caustic-calcined magnesias were recovered from seawater in Florida by Premier Chemicals. They were also recovered from Michigan well brines by Dow Chemical, Martin Marietta Magnesia Specialties and Rohm & Haas. And Premier Chemicals recovered dead-burned and caustic-calcined magnesias from magnesite in Nevada. Reilly Industries and Great Salt Lake Minerals recovered magnesium chloride brines from the Great Salt Lake in Utah.

  4. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2011-01-01

    Seawater and natural brines accounted for about 54 percent of U.S. magnesium compounds production in 2010. Dead-burned magnesia was produced by Martin Marietta Magnesia Specialties from well brines in Michigan. Caustic-calcined magnesia was recovered from seawater by Premier Magnesia in Florida, from well brines in Michigan by Martin Marietta and from magnesite in Nevada by Premier Magnesia. Intrepid Potash-Wendover and Great Salt Lake Minerals Corp. recovered magnesium chloride brines from the Great Salt Lake in Utah. Magnesium hydroxide was produced from seawater by SPI Pharma in Delaware and Premier Magnesia in Florida, and by Martin Marietta from its operation mentioned above.

  5. Silicon research and technology

    NASA Technical Reports Server (NTRS)

    Meulenberg, A.

    1982-01-01

    The development of solar cells suitable for space applications are discussed, along with the advantages and disadvantages of silicon and gallium arsenide solar cells. The goal of a silicon solar cell with 18% efficiency has not been reached and does not appear promising in the near future.

  6. Producing silicon continuously

    NASA Technical Reports Server (NTRS)

    Ingle, W. M.; Rosler, R. S.; Thompson, S.

    1981-01-01

    Fluid-bed vaporization followed by chemical vapor deposition generates large, semiconductor-grade silicon particles. Method is economical, high-volume alternative to conventional batch-processing methods. Harvested chunks, extracted in cyclone separator, are about 0.5 to 1.3 centimeters in diameter. Process is not limited to polymer feedstock; it utilizes any halosilane intermediate used in silicon production.

  7. Microgravity silicon zoning investigation

    NASA Technical Reports Server (NTRS)

    Kern, E. L.; Gill, G. L., Jr.

    1983-01-01

    A resistance heated zoner, suitable for early zoning experiments with silicon, was designed and put into operation. The initial power usage and size was designed for an shown to be compatible with payload carriers contemplated for the Shuttle. This equipment will be used in the definition and development of flight experiments and apparatus for float zoning silicon and other materials in microgravity.

  8. Cervical silicone lymphadenopathy.

    PubMed

    Gilbert, Latoni Kaysha; Thiruchelvam, Janavikulam

    2016-07-01

    A patient presented to the department of oral and maxillofacial surgery with a rare case of cervical silicone lymphadenopathy. She had a painless ovoid mass in the left side of her neck and had had cosmetic breast augmentation 10 years before. Radiological imaging and core biopsy examination were consistent with silicone lymphadenopathy. PMID:26830068

  9. Silicon carbide ceramic production

    NASA Technical Reports Server (NTRS)

    Suzuki, K.; Shinohara, N.

    1984-01-01

    A method to produce sintered silicon carbide ceramics in which powdery carbonaceous components with a dispersant are mixed with silicon carbide powder, shaped as required with or without drying, and fired in nonoxidation atmosphere is described. Carbon black is used as the carbonaceous component.

  10. Silicon nitride sintered body

    NASA Technical Reports Server (NTRS)

    Suzuki, K.; Shinohara, N.

    1984-01-01

    The sintering of silicon carbide and it production are described. The method of production is by calcination in which molding is followed by sintering without compression. The invention improves the composition of the silicon carbide ceramic. Six examples of the invention are illustrated and discussed.

  11. Biologically active compounds of semi-metals.

    PubMed

    Rezanka, Tomás; Sigler, Karel

    2008-02-01

    Semi-metals (boron, silicon, arsenic and selenium) form organo-metal compounds, some of which are found in nature and affect the physiology of living organisms. They include, e.g., the boron-containing antibiotics aplasmomycin, borophycin, boromycin, and tartrolon or the silicon compounds present in "silicate" bacteria, relatives of the genus Bacillus, which release silicon from aluminosilicates through the secretion of organic acids. Arsenic is incorporated into arsenosugars and arsenobetaines by marine algae and invertebrates, and fungi and bacteria can produce volatile methylated arsenic compounds. Some prokaryotes can use arsenate as a terminal electron acceptor while others can utilize arsenite as an electron donor to generate energy. Selenium is incorporated into selenocysteine that is found in some proteins. Biomethylation of selenide produces methylselenide and dimethylselenide. Selenium analogues of amino acids, antitumor, antibacterial, antifungal, antiviral, anti-infective drugs are often used as analogues of important pharmacological sulfur compounds. Other metalloids, i.e. the rare and toxic tellurium and the radioactive short-lived astatine, have no biological significance. PMID:17991498

  12. Intermetallic Compounds

    NASA Astrophysics Data System (ADS)

    Takagiwa, Y.; Matsuura, Y.; Kimura, K.

    2014-06-01

    We have focused on the binary narrow-bandgap intermetallic compounds FeGa3 and RuGa3 as thermoelectric materials. Their crystal structure is FeGa3-type (tetragonal, P42/ mnm) with 16 atoms per unit cell. Despite their simple crystal structure, their room temperature thermal conductivity is in the range 4-5-W-m-1-K-1. Both compounds have narrow-bandgaps of approximately 0.3-eV near the Fermi level. Because their Seebeck coefficients are quite large negative values in the range 350-<-| S 373K|-<-550- μV-K-1 for undoped samples, it should be possible to obtain highly efficient thermoelectric materials both by adjusting the carrier concentration and by reducing the thermal conductivity. Here, we report the effects of doping on the thermoelectric properties of FeGa3 and RuGa3 as n and p-type materials. The dimensionless figure of merit, ZT, was significantly improved by substitution of Sn for Ga in FeGa3 (electron-doping) and by substitution of Zn for Ga in RuGa3 (hole-doping), mainly as a result of optimization of the electronic part, S 2 σ.

  13. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2007-01-01

    Seawater and natural brines accounted for about 52 percent of U.S. magnesium compounds production in 2006. Dead-burned magnesia was produced by Martin Marietta Magnesia Specialties from well brines in Michigan. Caustic-calcined magnesia was recovered from sea-water by Premier Chemicals in Florida; from well brines in Michigan by Martin Marietta and Rohm and Haas; and from magnesite in Nevada by Premier Chemicals. Intrepid Potash-Wendover and Great Salt Lake Minerals recovered magnesium chloride brines from the Great Salt Lake in Utah. Magnesium hydroxide was produced from brucite by Applied Chemical Magnesias in Texas, from seawater by SPI Pharma in Delaware and Premier Chemicals in Florida, and by Martin Marietta and Rohm and Haas from their operations mentioned above. About 59 percent of the magnesium compounds consumed in the United States was used for refractories that are used mainly to line steelmaking furnaces. The remaining 41 percent was consumed in agricultural, chemical, construction, environmental and industrial applications.

  14. Reversible Cycling of Silicon and Silicon Alloys

    NASA Astrophysics Data System (ADS)

    Obrovac, Mark

    2012-02-01

    Lithium ion batteries typically use a graphite negative electrode. Silicon can store more lithium than any other element and has long been considered as an attractive replacement for graphite. The theoretical lithium storage capacity of silicon is nearly ten times higher than graphite volumetrically and three times higher gravimetrically. The equilibrium Si-Li binary system is well known. Completely new phase behaviors are observed at room temperature. This includes the formation of a new phase, Li15Si4, which is the highest lithium containing phase at room temperature [1]. The formation of Li15Si4 is accompanied by a 280 percent volume expansion of silicon. During de-alloying this phase contracts, forming amorphous silicon. The volume expansion of alloys can cause intra-particle fracture and inter-particle disconnection; leading to loss of cycle life. To overcome issues with volume expansion requires a detailed knowledge of Li-Si phase behavior, careful design of the composition and nanostructure of the alloy and the microstructure of the negative electrode [2]. In this presentation the phase behavior of the Li-Si system will be described. Using this knowledge alone, strategies can be developed so that silicon can be reversibly cycled in a battery hundreds of times. Further increases in energy density and efficiency can be gained by alloying silicon with other elements, while controlling microstructure [2]. Coupled with negative electrode design strategies, practical negative electrodes for lithium ion cells can be developed based on bulk materials, with significant energy density improvement over conventional electrodes. [4pt] [1] M.N. Obrovac and L.J. Krause, J. Electrochem. Soc., 154 (2007) A103. [0pt] [2] M.N. Obrovac, Leif Christensen, Dinh Ba Le, and J.R. Dahn, J. Electrochem. Soc., 154 (2007) A849

  15. Spin Transport in Silicon

    NASA Astrophysics Data System (ADS)

    Appelbaum, Ian

    2008-03-01

    Silicon has been broadly viewed as the ideal material for spintronics due to its low atomic weight, lattice inversion symmetry, and near lack of nuclear spin, resulting in exceptionally long spin lifetime. Despite this appeal, however, the experimental difficulties of achieving coherent spin transport in silicon were overcome for the first time only recently, by using unique spin-polarized hot-electron injection and detection techniques. [1] Our subsequent observations of very long spin lifetimes and transit lengths [2] have impact on prospects for Silicon spintronics as the basis for a new paradigm of information processing. [1] Ian Appelbaum, Biqin Huang, and Douwe J. Monsma, ``Electronic measurement and control of spin transport in silicon,'' Nature 447, 295 (2007). [2] Biqin Huang, Douwe J. Monsma, and Ian Appelbaum, ``Coherent spin transport through a 350-micron-thick silicon wafer,'' Phys. Rev. Lett. 99, 177209 (2007).

  16. Intraventricular Silicone Oil

    PubMed Central

    Mathis, Stéphane; Boissonnot, Michèle; Tasu, Jean-Pierre; Simonet, Charles; Ciron, Jonathan; Neau, Jean-Philippe

    2016-01-01

    Abstract Intracranial silicone oil is a rare complication of intraocular endotamponade with silicone oil. We describe a case of intraventricular silicone oil fortuitously observed 38 months after an intraocular tamponade for a complicated retinal detachment in an 82 year-old woman admitted in the Department of Neurology for a stroke. We confirm the migration of silicone oil along the optic nerve. We discuss this rare entity with a review of the few other cases reported in the medical literature. Intraventricular migration of silicone oil after intraocular endotamponade is usually asymptomatic but have to be known of the neurologists and the radiologists because of its differential diagnosis that are intraventricular hemorrhage and tumor. PMID:26735537

  17. Silicone-containing composition

    DOEpatents

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  18. Generation of low work function, stable compound thin films by laser ablation

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2001-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  19. In-situ formation of nanoparticles within a silicon-based matrix

    DOEpatents

    Thoma, Steven G.; Wilcoxon, Jess P.; Abrams, Billie L.

    2008-06-10

    A method for encapsulating nanoparticles with an encapsulating matrix that minimizes aggregation and maintains favorable properties of the nanoparticles. The matrix comprises silicon-based network-forming compounds such as ormosils and polysiloxanes. The nanoparticles are synthesized from precursors directly within the silicon-based matrix.

  20. Method for producing silicon nitride/silicon carbide composite

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-07-23

    Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

  1. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect

    Kovačević, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  2. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2012-01-01

    Seawater and natural brines accounted for about 57 percent of magnesium compounds produced in the United States in 2011. Dead-burned magnesia was produced by Martin Marietta Magnesia Specialties LLC from well brines in Michigan. Caustic-calcined magnesia was recovered from seawater by Premier Magnesia LLC in Florida, from well brines in Michigan by Martin Marietta and from magnesite in Nevada by Premier Magnesia. Intrepid Potash Wendover LLC and Great Salt Lake Minerals Corp. recovered magnesium chloride brines from the Great Salt Lake in Utah. Magnesium hydroxide was produced from seawater by SPI Pharma Inc. in Delaware and Premier Magnesia in Florida, and by Martin Marietta from its brine operation in Michigan.

  3. Bismaleimide compounds

    DOEpatents

    Adams, Johnnie E.; Jamieson, Donald R.

    1986-01-14

    Bismaleimides of the formula ##STR1## wherein R.sub.1 and R.sub.2 each independently is H, C.sub.1-4 -alkyl, C.sub.1-4 -alkoxy, C1 or Br, or R.sub.1 and R.sub.2 together form a fused 6-membered hydrocarbon aromatic ring, with the proviso that R.sub.1 and R.sub.2 are not t-butyl or t-butoxy; X is O, S or Se; n is 1-3; and the alkylene bridging group, optionally, is substituted by 1-3 methyl groups or by fluorine, form polybismaleimide resins which have valuable physical properties. Uniquely, these compounds permit extended cure times, i.e., they remain fluid for a time sufficient to permit the formation of a homogeneous melt prior to curing.

  4. Bismaleimide compounds

    DOEpatents

    Adams, J.E.; Jamieson, D.R.

    1986-01-14

    Bismaleimides of the formula shown in the diagram wherein R[sub 1] and R[sub 2] each independently is H, C[sub 1-4]-alkyl, C[sub 1-4]-alkoxy, Cl or Br, or R[sub 1] and R[sub 2] together form a fused 6-membered hydrocarbon aromatic ring, with the proviso that R[sub 1] and R[sub 2] are not t-butyl or t-butoxy; X is O, S or Se; n is 1--3; and the alkylene bridging group, optionally, is substituted by 1--3 methyl groups or by fluorine, form polybismaleimide resins which have valuable physical properties. Uniquely, these compounds permit extended cure times, i.e., they remain fluid for a time sufficient to permit the formation of a homogeneous melt prior to curing.

  5. Process for purification of silicon

    NASA Technical Reports Server (NTRS)

    Rath, H. J.; Sirtl, E.; Pfeiffer, W.

    1981-01-01

    The purification of metallurgically pure silicon having a silicon content of more than 95% by weight is accomplished by leaching with an acidic solution which substantially does not attack silicon. A mechanical treatment leading to continuous particle size reduction of the granulated silicon to be purified is combined with the chemical purification step.

  6. Hydrogen in amorphous silicon

    SciTech Connect

    Peercy, P. S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH/sub 1/) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon.

  7. Transformational silicon electronics.

    PubMed

    Rojas, Jhonathan Prieto; Torres Sevilla, Galo Andres; Ghoneim, Mohamed Tarek; Inayat, Salman Bin; Ahmed, Sally M; Hussain, Aftab Mustansir; Hussain, Muhammad Mustafa

    2014-02-25

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry's most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. PMID:24476361

  8. Process for making silicon

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  9. Monitoring of Malodorous Compounds from a Swine Waste Lagoon by an Equilibrium Technique

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The levels of malodorous compounds in the air above an anaerobic lagoon of a large swine farrowing operation were measured. Compounds were adsorbed onto silicone stir bars and retained compounds measured by gas chromatography-mass spectroscopy. Equilibration times were previously determined by exper...

  10. Roadmap on silicon photonics

    NASA Astrophysics Data System (ADS)

    Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O’Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

    2016-07-01

    Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

  11. Note: A portable laser induced breakdown spectroscopy instrument for rapid sampling and analysis of silicon-containing aerosols.

    PubMed

    McLaughlin, R P; Mason, G S; Miller, A L; Stipe, C B; Kearns, J D; Prier, M W; Rarick, J D

    2016-05-01

    A portable instrument has been developed for measuring silicon-containing aerosols in near real-time using laser-induced breakdown spectroscopy (LIBS). The instrument uses a vacuum system to collect and deposit airborne particulate matter onto a translatable reel of filter tape. LIBS is used to analyze the deposited material, determining the amount of silicon-containing compounds present. In laboratory testing with pure silica (SiO2), the correlation between LIBS intensity for a characteristic silicon emission and the concentration of silica in a model aerosol was determined for a range of concentrations, demonstrating the instrument's plausibility for identifying hazardous levels of silicon-containing compounds. PMID:27250478

  12. Note: A portable laser induced breakdown spectroscopy instrument for rapid sampling and analysis of silicon-containing aerosols

    NASA Astrophysics Data System (ADS)

    McLaughlin, R. P.; Mason, G. S.; Miller, A. L.; Stipe, C. B.; Kearns, J. D.; Prier, M. W.; Rarick, J. D.

    2016-05-01

    A portable instrument has been developed for measuring silicon-containing aerosols in near real-time using laser-induced breakdown spectroscopy (LIBS). The instrument uses a vacuum system to collect and deposit airborne particulate matter onto a translatable reel of filter tape. LIBS is used to analyze the deposited material, determining the amount of silicon-containing compounds present. In laboratory testing with pure silica (SiO2), the correlation between LIBS intensity for a characteristic silicon emission and the concentration of silica in a model aerosol was determined for a range of concentrations, demonstrating the instrument's plausibility for identifying hazardous levels of silicon-containing compounds.

  13. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Pitts, J.R.

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  14. Advanced silicon on insulator technology

    NASA Technical Reports Server (NTRS)

    Godbey, D.; Hughes, H.; Kub, F.

    1991-01-01

    Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

  15. Silicon Nitride For Gallium Arsenide Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Nagle, J.; Morgan, David V.

    1987-04-01

    Gallium Arsenide, unlike silicon does not have a natural oxide with the dielectric and interface qualities of SiO2. As a consequence alternative techniques have to be developed for device and IC processing applications. Plasma deposited silicon nitride films are currently being investigated in many laboratories. This paper will deal with the characterization of such films deposited under a range of gas and plasma deposition conditions. The techniques of Infra Red Spectroscopy and Rutherford backscattering have been used for characterization of both "as deposited layers" and layers which have been annealed up to temperatures of 800 °C, after deposition. The use of RBS for silicon nitride on GaAs is limited since the relatively small nitride spectrum is superimposed on much larger GaAs spectrum. The problem can be removed by placing carbon test substrates alongside the GaAs wafers. This separates the silicon and nitrogen spectra from the substrate enabling enhanced accuracy to be obtained. In this paper the range of results obtained will be discussed in the context of the deposition condition in order to identify the optimum conditions for obtaining a stoichiometric compound and a high quality interface.

  16. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  17. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  18. Respiratory Disease following Illicit Injection of Silicone: A Case Report

    PubMed Central

    Essenmacher, Alex Charles; Astani, Seyed Amin

    2013-01-01

    Unregulated, pseudomedical procedures risk serious sequelae even when otherwise safe compounds are used. Silicone is commonly used legally in cosmetic procedures owing to its durability, resistance to heat and aging, and low immunogenicity. However, inappropriate or illegal silicone injection can pose severe local and systemic complications including serious pulmonary compromise. We describe the case of a 30-year-old female who presented with hemoptysis and progressive shortness of breath following illicit silicone injections to the gluteal fat and was found to have new, diffuse, bilateral, ground-glass opacities on contrast-enhanced pulmonary computed tomography. Transbronchial biopsy elucidated that this was a lipoid pneumonia-type injury secondary to silicone infiltration. PMID:23956752

  19. Respiratory Disease following Illicit Injection of Silicone: A Case Report.

    PubMed

    Essenmacher, Alex Charles; Astani, Seyed Amin

    2013-01-01

    Unregulated, pseudomedical procedures risk serious sequelae even when otherwise safe compounds are used. Silicone is commonly used legally in cosmetic procedures owing to its durability, resistance to heat and aging, and low immunogenicity. However, inappropriate or illegal silicone injection can pose severe local and systemic complications including serious pulmonary compromise. We describe the case of a 30-year-old female who presented with hemoptysis and progressive shortness of breath following illicit silicone injections to the gluteal fat and was found to have new, diffuse, bilateral, ground-glass opacities on contrast-enhanced pulmonary computed tomography. Transbronchial biopsy elucidated that this was a lipoid pneumonia-type injury secondary to silicone infiltration. PMID:23956752

  20. Novel axially disubstituted non-aggregated silicon phthalocyanines

    NASA Astrophysics Data System (ADS)

    Bıyıklıoğlu, Zekeriya; Çakır, Dilek

    2012-12-01

    This paper describes the synthesis, spectroscopic characterization of a range of new axially-disubstituted silicon phthalocyanines with 2-[2-(dimethylamino)ethoxy] or 2-[2-(1,4,7,10,13-pentaoxa-16-azacyclooctadecan-16-yl)ethoxy] groups as axial ligands. 2-[2-(Dimethylamino)ethoxy]ethanol 2, 2-[2-(1,4,7,10,13-pentaoxa-16-azacyclooctadecan-16-yl)ethoxy]ethanol 4 are reacted with silicon phthalocyanine 1, to give an axially-disubstituted silicon phthalocyanines 3 and 5. Axially-disubstituted silicon phthalocyanine complexes were synthesized at the first time. Newly synthesized silicon phthalocyanines were characterized by UV-Vis, IR, 1H NMR, 13C NMR spectroscopy, ESI mass spectrometry. These new silicon(IV) phthalocyanines 3 and 5 showed excellent solubility in organic solvents such as CHCl3, CH2Cl2, acetone, DMF, DMSO, THF, EtOAc. The aggregation behavior of these compounds were investigated in different concentrations of DMSO. The effect of solvents on absorption spectra were studied in various organic solvents. The thermal stabilities of the silicon(IV) phthalocyanines 3 and 5 were determined by thermogravimetric analysis.

  1. Silicon production process evaluations

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Engineering design of the third distillation column in the process was accomplished. The initial design is based on a 94.35% recovery of dichlorosilane in the distillate and a 99.9% recovery of trichlorosilane in the bottoms. The specified separation is achieved at a reflux ratio of 15 with 20 trays (equilibrium stages). Additional specifications and results are reported including equipment size, temperatures and pressure. Specific raw material requirements necessary to produce the silicon in the process are presented. The primary raw materials include metallurgical grade silicon, silicon tetrachloride, hydrogen, copper (catalyst) and lime (waste treatment). Hydrogen chloride is produced as by product in the silicon deposition. Cost analysis of the process was initiated during this reporting period.

  2. Silicon microfabricated beam expander

    SciTech Connect

    Othman, A. Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  3. Silicone azide fireproof material

    NASA Technical Reports Server (NTRS)

    1978-01-01

    Finely powdered titanium oxide was added to silicone azide as the sintering agent to produce a nonflammable material. Mixing proportions, physical properties, and chemical composition of the fireproofing material are included.

  4. Silicon microfabricated beam expander

    NASA Astrophysics Data System (ADS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  5. Towards silicon speciation in light petroleum products using gas chromatography coupled to inductively coupled plasma mass spectrometry equipped with a dynamic reaction cell

    NASA Astrophysics Data System (ADS)

    Chainet, Fabien; Lienemann, Charles-Philippe; Ponthus, Jeremie; Pécheyran, Christophe; Castro, Joaudimir; Tessier, Emmanuel; Donard, Olivier François Xavier

    2014-07-01

    Silicon speciation has recently gained interest in the oil and gas industry due to the significant poisoning problems caused by silicon on hydrotreatment catalysts. The poisoning effect clearly depends on the structure of the silicon species which must be determined and quantified. The hyphenation of gas chromatography (GC) coupled to inductively coupled plasma mass spectrometry (ICP-MS) allows a specific detection to determine the retention times of all silicon species. The aim of this work is to determine the retention indices of unknown silicon species to allow their characterization by a multi-technical approach in order to access to their chemical structure. The optimization of the dynamic reaction cell (DRC) of the ICP-MS using hydrogen as reactant gas successfully demonstrated the resolution of the interferences (14N14N+ and 12C16O+) initially present on 28Si. The linearity was excellent for silicon compounds and instrumental detection limits ranged from 20 to 140 μg of Si/kg depending on the response of the silicon compounds. A continuous release of silicon in the torch was observed most likely due to the use of a torch and an injector which was made of quartz. A non-universal response for silicon was observed and it was clearly necessary to use response coefficients to quantify silicon compounds. Known silicon compounds such as cyclic siloxanes (D3-D16) coming from PDMS degradation were confirmed. Furthermore, more than 10 new silicon species never characterized before in petroleum products were highlighted in polydimethylsiloxane (PDMS) degradation samples produced under thermal cracking of hydrocarbons. These silicon species mainly consisted of linear and cyclic structures containing reactive functions such as ethoxy, peroxide and hydroxy groups which can be able to react with the alumina surface and hence, poison the catalyst. This characterization will further allow the development of innovative solutions such as trapping silicon compounds or

  6. Turbulent flow model for vapor collection efficiency of a high-purity silicon reactor

    NASA Technical Reports Server (NTRS)

    Srivastava, R.; Gould, R. K.

    1985-01-01

    In this study a mathematical model and a computer code based on this model was developed to allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon. Specifically, the model formulated describes the silicon vapor separation/collection from the developing turbulent flow stream within reactors of the Westinghouse type. Migration of the silicon vapor to the reactor walls was described by the parametric solutions presented here, in order to reduce the experimentation necessary in the design of such reactors. Calculations relating to the collection efficiencies of such reactors are presented as a function of the reactor throughflow and distance along its length.

  7. Silicon sheet surface studies

    NASA Astrophysics Data System (ADS)

    Danyluk, S.

    1985-06-01

    Results of the program are presented on developing an understanding of the basic mechanisms of abrasion and wear of silicon and on the nondestructive measurement of residual stresses in sheet silicon. Experiments were conducted at various temperatures and in the presence of various fluids. In abrasive wear, it was shown that dislocations, microtwins, and cracks are generated beneath the contact surface. Residual stresses in ribbon by the edge defined film growth process were measured by use of a shadow moire interferometry technique.

  8. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  9. Material properties of silicon and silicon carbide foams

    NASA Astrophysics Data System (ADS)

    Jacoby, Marc T.; Goodman, William A.

    2005-08-01

    Silicon and silicon carbide foams provide the lightweighting element for Schafer Corporation's silicon and silicon carbide lightweight mirror systems (SLMSTM and SiC-SLMSTM). SLMSTM and SiC-SLMSTM provide the enabling technology for manufacturing lightweight, athermal optical sub-assemblies and instruments. Silicon and silicon carbide foam samples were manufactured and tested under a Schafer-funded Internal Research and Development program in various configurations to obtain mechanical and thermal property data. The results of the mechanical tests that are reported in this paper include Young's modulus, compression strength, tensile strength, Poisson's ratio and vibrational damping. The results of the thermal tests include thermal conductivity and coefficient of thermal expansion.

  10. Oxygen defect processes in silicon and silicon germanium

    SciTech Connect

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  11. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  12. Oxygen defect processes in silicon and silicon germanium

    NASA Astrophysics Data System (ADS)

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  13. Silicon and silicone: theoretical and clinical implications of breast implants.

    PubMed

    Yoshida, S H; Chang, C C; Teuber, S S; Gershwin, M E

    1993-02-01

    In the past 10 years, there have been multiple published reports associating silicone breast implants with scleroderma, morphea, SLE, rheumatoid arthritis, CREST syndrome and "human adjuvant disease." The alleged offending material, silicone, is a synthetic polymer containing a silicon-oxygen backbone. Beginning with the heating of SiO2 in the presence of carbon, elemental silicon is produced. Methylchloride is added and the resulting product is hydrolyzed to form low molecular weight prepolymers which are linked to form linear silicone polymers and cross-linked to yield silicone rubbers or elastomers. The polymeric and hydrophobic characteristics of silicone and the presence of electrostatic charges and organic sidegroups make silicone a potentially ideal immunogen, leading to cross-reactivity with autoantigens. Silicon is an essential constituent of proteoglycans which theoretically could result in immunological cross-reactions between silicone and connective tissues. Although the literature contains numerous examples of silicone-associated autoimmune disease, there is no consistent pattern of immunological abnormalities observed. There are, however, some intriguing and interesting observations. Further large-scale studies are needed to determine if a link between silicone exposure and autoimmunity exists. Also, since the inducing events of autoimmune diseases are unknown, studies on silicone could provide a model for autoimmune diseases associated with toxicological factors. PMID:8441826

  14. Electronic structure and stability of some silicon compounds

    NASA Astrophysics Data System (ADS)

    Novak, Igor; Abu-Izneid, Tareq; Kovač, Branka

    2010-05-01

    The electronic structures of N,1,3-tris(1,1-dimethylethyl)-cyclodisilazan-2-amine ( I) and 2,3,5,5-tetrakis(trimethylsilyl)cyclopentadiene ( II) have been investigated by HeI and HeII UV photoelectron spectroscopy (UPS) and quantum chemical calculations. We discuss the influence of substituent effects on their electronic structure and thermodynamic stability. Our study shows that trimethylsilyl substituents have strong influence on the electronic structure of cyclopentadiene via inductive effect. Their influence on thermodynamic stability is also pronounced. In substituted cyclodisilazanes hyperconjugative influence of alkylsilyl groups was shown to cause relative thermodynamic stabilization of the cyclodisilazane system.

  15. Improved mold release for filled-silicone compounds

    NASA Technical Reports Server (NTRS)

    Accountius, O. E.

    1973-01-01

    Ceramic and filled-plastic materials used for fabrication of tiles are relatively brittle and easily break as they are being removed from molds. Dusting mold surfaces with commercially available glass microspheres provides mold release superior to existing spray releases. Glass-microsphere dusting also permits removal of uncured tile which has very little strength.

  16. Very high temperature silicon on silicon pressure transducers

    NASA Technical Reports Server (NTRS)

    Kurtz, Anthony D.; Nunn, Timothy A.; Briggs, Stephen A.; Ned, Alexander

    1992-01-01

    A silicon on silicon pressure sensor has been developed for use at very high temperatures (1000 F). The design principles used to fabricate the pressure sensor are outlined and results are presented of its high temperature performance.

  17. Silicone breast implant materials.

    PubMed

    Daniels, A U

    2012-01-01

    This opinion article has been written on request because of the recent public controversy over silicone breast implants produced by a now-defunct company, Poly Implant Prosthese (PIP) in France. More than 300,000 PIP devices have been implanted. The purposes of my article are to (1.) provide a general overview of silicone breast implant materials, (2.) to describe the general safety of these materials as reported to date, and (3.) to summarise current publicly available information about these aspects of the PIP prostheses. The materials covered are the silicone rubber from which the implant shells are made and the silicone gel used to fill the shell. The materials safety issues are biocompatibility (especially of the gel) and biodurability of the shell. The literature reviewed indicates that biocompatibility is not an issue with other current generation implants. However, biodurability is. A rough estimate of implant shell rupture rate is ~10+% at 10 years. Information is still emerging about the PIP implants. Initial regulatory disclosures suggest the PIP implants may have both biocompatibility and biodurability problems. They also suggest that PIP implants may have been produced using silicone materials not certified as medical grade. Governmental health and regulatory agencies are just now in the process of deciding what actions should be taken to protect patients. PMID:22826101

  18. Bondability of RTV silicon rubber

    NASA Technical Reports Server (NTRS)

    Delollis, N. J.; Montoya, O.

    1972-01-01

    Glow discharge method for producing a bondable Room Temperature Vulcanizing (RTV) silicone is described. Mechanical and chemical properties of silicone specimens are described. Theory concerning the relationship between surface characteristics and bondability is examined with respect to the polymer specimen.

  19. Improved toughness of silicon carbide

    NASA Technical Reports Server (NTRS)

    Palm, J. A.

    1976-01-01

    Impact energy absorbing layers (EALs) comprised of partially densified silicon carbide were formed in situ on fully sinterable silicon carbide substrates. After final sintering, duplex silicon carbide structures resulted which were comprised of a fully sintered, high density silicon carbide substrate or core, overlayed with an EAL of partially sintered silicon carbide integrally bonded to its core member. Thermal cycling tests proved such structures to be moderately resistant to oxidation and highly resistant to thermal shock stresses. The strength of the developed structures in some cases exceeded but essentially it remained the same as the fully sintered silicon carbide without the EAL. Ballistic impact tests indicated that substantial improvements in the toughness of sintered silicon carbide were achieved by the use of the partially densified silicon carbide EALs.

  20. Liquidus of Silicon Binary Systems

    NASA Astrophysics Data System (ADS)

    Safarian, Jafar; Kolbeinsen, Leiv; Tangstad, Merete

    2011-08-01

    Thermodynamic knowledge about liquid silicon is crucial for the production of solar-grade silicon feedstock from molten silicon. In the current study, liquidus for silicon binary alloys is formulated using a previously developed method in which the liquidus curve is calculated using two constants. The liquidus measurements for the silicon portion of the silicon alloys with Al, Ca, Mg, Fe, Ti, Zn, Cu, Ag, Au, Pt, Sn, Pb, Bi, Sb, Ga, In, Ni, Pd, Mn, and Rh are reviewed, and the consistent data were used to determine the liquidus constants. The liquidus curves for silicon binary systems are calculated and plotted. It is indicated that the calculated liquidus curves fit well with the experimental data. A correlation between the determined liquidus constants is also observed, which can be used to gain a better understanding of the thermodynamics of the silicon binary melts.

  1. Bond Sensitivity to Silicone Contamination

    NASA Technical Reports Server (NTRS)

    Caldwell, G. A.; Hudson, W. D.; Hudson, W. D.; Cash, Stephen F. (Technical Monitor)

    2003-01-01

    Currently during fabrication of the Space Shuttle booster rocket motors, the use of silicone and silicone-containing products is prohibited in most applications. Many shop aids and other materials containing silicone have the potential, if they make contact with a bond surface, to transfer some of the silicone to the substrates being bonded. Such transfer could result in a reduction of the bond strength or even failure of the subsequent bonds. This concern is driving the need to understand the effect of silicones and the concentration needed to affect a given bond-line strength. Additionally, as silicone detection methods used for materials acceptance improve what may have gone unnoticed earlier is now being detected. Thus, realistic silicone limits for process materials (below which bond performance is satisfactory) are needed rather than having an absolute no silicone permitted policy.

  2. Silicon carbide thyristor

    NASA Technical Reports Server (NTRS)

    Edmond, John A. (Inventor); Palmour, John W. (Inventor)

    1996-01-01

    The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

  3. Scriber for silicon wafers

    NASA Technical Reports Server (NTRS)

    Yamakawa, K. A.; Fortier, E. P. (Inventor)

    1981-01-01

    A device for dividing silicon wafers into rectangular chips is characterized by a base including a horizontally oriented bed with a planar support surface, a vacuum chuck adapted to capture a silicon wafer seated on the support for translation in mutually perpendicular directions. A stylus support mounted on the bed includes a shaft disposed above and extended across the bed and a truck mounted on the shaft and supported thereby for linear translation along a path extended across the bed a vertically oriented scribe has a diamond tip supported by the truck also adapted as to engage a silicon wafer captured by the chuck and positioned beneath it in order to form score lines in the surface of the wafer as linear translation is imparted to the truck. A chuck positioning means is mounted on the base and is connected to the chuck for positioning the chuck relative to the stylus.

  4. Neuromorphic silicon neuron circuits.

    PubMed

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin-Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  5. Emissivity of microstructured silicon.

    PubMed

    Maloney, Patrick G; Smith, Peter; King, Vernon; Billman, Curtis; Winkler, Mark; Mazur, Eric

    2010-03-01

    Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively. PMID:20197803

  6. The electrophotonic silicon biosensor.

    PubMed

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E; Scullion, Mark G; Krauss, Thomas F; Johnson, Steven D

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  7. Thick silicon growth techniques

    NASA Technical Reports Server (NTRS)

    Bates, H. E.; Mlavsky, A. I.; Jewett, D. N.

    1973-01-01

    Hall mobility measurements on a number of single crystal silicon ribbons grown from graphite dies have shown some ribbons to have mobilities consistent with their resistivities. The behavior of other ribbons appears to be explained by the introduction of impurities of the opposite sign. Growth of a small single crystal silicon ribbon has been achieved from a beryllia dia. Residual internal stresses of the order of 7 to 18,000 psi have been determined to exist in some silicon ribbon, particularly those grown at rates in excess of 1 in./min. Growth experiments have continued toward definition of a configuration and parameters to provide a reasonable yield of single crystal ribbons. High vacuum outgassing of graphite dies and evacuation and backfilling of growth chambers have provided significant improvements in surface quality of ribbons grown from graphite dies.

  8. Palladium contamination in silicon

    NASA Astrophysics Data System (ADS)

    Polignano, M. L.; Mica, I.; Ceresoli, M.; Codegoni, D.; Somaini, F.; Bianchi, I.; Volonghi, D.

    2015-04-01

    In this work palladium is characterized as a silicon contaminant by recombination lifetime, DLTS, C-V and C-t measurements of palladium-implanted wafers. Palladium introduced by ion implantation is found to remain in the solid solution in silicon after rapid thermal treatments, and to be a very effective recombination center. For this reason recombination lifetime measurements are the most sensitive method to detect palladium in silicon. Two palladium-related levels were found by DLTS in p-type material. One of these levels corresponds to a level reported in the literature as the single donor level of substitutional palladium. For what concerns MOS capacitors, palladium is responsible for negative oxide charge and for degradation of the generation lifetime. In addition, palladium is confirmed to be a very fast diffuser, which segregates at the wafer surface even with low temperature treatments (250 °C). Microscopy inspections showed that palladium precipitates and surface defects were formed upon segregation.

  9. Neuromorphic Silicon Neuron Circuits

    PubMed Central

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  10. Floating Silicon Method

    SciTech Connect

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  11. Microgravity silicon zoning investigation

    NASA Technical Reports Server (NTRS)

    Kern, E. L.; Gill, G. L., Jr.

    1985-01-01

    The flow instabilities in floating zones of silicon were investigated and methods for investigation of these instabilities in microgravity were defined. Three principal tasks were involved: (1) characterization of the float zone in small diameter rods; (2) investigation of melt flow instabilities in circular melts in silicon disks; and (3) the development of a prototype of an apparatus that could be used in near term space experiments to investigate flow instabilities in a molten zone. It is shown that in a resistance heated zoner with 4 to 7 mm diameter silicon rods that the critical Marangoni number is about 1480 compared to a predicted value of 14 indicative that viable space experiments might be performed. The prototype float zone apparatus is built and specifications are prepared for a flight zoner should a decision be reached to proceed with a space flight experimental investigation.

  12. Micromachined silicon electrostatic chuck

    SciTech Connect

    Anderson, R.A.; Seager, C.H.

    1994-12-31

    In the field of microelectronics, and in particular the fabrication of microelectronics during plasma etching processes, electrostatic chucks have been used to hold silicon wafers during the plasma etching process. Current electrostatic chucks that operate by the {open_quotes}Johnson-Rahbek Effect{close_quotes} consist of a metallic base plate that is typically coated with a thick layer of slightly conductive dielectric material. A silicon wafer of approximately the same size as the chuck is placed on top of the chuck and a potential difference of several hundred volts is applied between the silicon and the base plate of the electrostatic chuck. This causes an electrostatic attraction proportional to the square of the electric field in the gap between the silicon wafer and the chuck face. When the chuck is used in a plasma filled chamber the electric potential of the wafer tends to be fixed by the effective potential of the plasma. The purpose of the dielectric layer on the chuck is to prevent the silicon wafer from coming into direct electrical contact with the metallic part of the chuck and shorting out the potential difference. On the other hand, a small amount of conductivity appears to be desirable in the dielectric coating so that much of its free surface between points of contact with the silicon wafer is maintained near the potential of the metallic base plate; otherwise, a much larger potential difference would be needed to produce a sufficiently large electric field in the vacuum gap between the wafer and chuck. Typically, the face of the chuck has a pattern of grooves in which about 10 torr pressure of helium gas is maintained. This gas provides cooling (thermal contact) between the wafer and the chuck. A pressure of 10 torr is equivalent to about 0.2 psi.

  13. Nanoscale doping of compound semiconductors by solid phase dopant diffusion

    NASA Astrophysics Data System (ADS)

    Ahn, Jaehyun; Chou, Harry; Koh, Donghyi; Kim, Taegon; Roy, Anupam; Song, Jonghan; Banerjee, Sanjay K.

    2016-03-01

    Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiOx) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration of 1.4 × 1018 cm-3. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.

  14. Silicon sheet technologies

    SciTech Connect

    Ciszek, T.F.

    1982-09-01

    A classification of silicon sheet growth methods by meniscus geometry permits them to be discussed in three groups: short meniscus techniques, high meniscus techniques, and extended meniscus or large solid/liquid interface area techniques. A second parameter, meniscus shaper interaction with the liquid silicon, is also instrumental in determining the characteristics of the various sheet processes. The current status of each process is discussed in the context of meniscus geometry and shaper/melt interaction. One aspect of sheet growth, surface area generation rate, is quantitatively compared with combined ingot growth and wafering surface area generation rates.

  15. Electrochemical thinning of silicon

    DOEpatents

    Medernach, John W.

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  16. Electrochemical thinning of silicon

    SciTech Connect

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  17. Hybrid Silicon Nanophotonic Devices: Enhancing Light Emission, Modulation, and Confinement

    NASA Astrophysics Data System (ADS)

    Briggs, Ryan Morrow

    Silicon has become an increasingly important photonic material for communications, information processing, and sensing applications. Silicon is inexpensive compared to compound semiconductors, and it is well suited for confining and guiding light at standard telecommunication wavelengths due to its large refractive index and minimal intrinsic absorption. Furthermore, silicon-based optical devices can be fabricated alongside microelectronics while taking advantage of advanced silicon processing technologies. In order to realize complete chip-based photonic systems, certain critical components must continue to be developed and refined on the silicon platform, including compact light sources, modulators, routers, and sensing elements. However, bulk silicon is not necessarily an ideal material for many active devices because of its meager light emission characteristics, limited refractive index tunability, and fundamental limitations in confining light beyond the diffraction limit. In this thesis, we present three examples of hybrid devices that use different materials to bring additional optical functionality to silicon photonics. First, we analyze high-index-contrast silicon slot waveguides and their integration with light-emitting erbium-doped glass materials. Theoretical and experimental results show significant enhancement of spontaneous emission rates in slot structures. We then demonstrate the integration of vanadium dioxide, a thermochromic phase-change material, with silicon waveguides to form micron-scale absorption modulators. It is shown experimentally that a 2-mum long waveguide-integrated device exhibits broadband modulation of more than 6.5 dB at wavelengths near 1550 nm. Finally, we demonstrate polymer-on-gold dielectric-loaded surface-plasmon waveguides and ring resonators coupled to silicon waveguides with 1.0+/-0.1 dB insertion loss. The plasmonic waveguides are shown to support a single surface mode at telecommunication wavelengths, with strong

  18. Light emission from porous silicon

    NASA Astrophysics Data System (ADS)

    Penczek, John

    The continuous evolution of silicon microelectronics has produced significant gains in electronic information processing. However, greater improvements in performance are expected by utilizing optoelectronic techniques. But these techniques have been severely limited in silicon- based optoelectronics due to the lack of an efficient silicon light emitter. The recent observation of efficient light emission from porous silicon offer a promising opportunity to develop a suitable silicon light source that is compatible with silicon microelectronics. This dissertation examined the porous silicon emission mechanism via photoluminescence, and by a novel device structure for porous silicon emitters. The investigation first examined the correlation between porous silicon formation conditions (and subsequent morphology) with the resulting photoluminescence properties. The quantum confinement theory for porous silicon light emission contends that the morphology changes induced by the different formation conditions determine the optical properties of porous silicon. The photoluminescence spectral shifts measured in this study, in conjunction with TEM analysis and published morphological data, lend support to this theory. However, the photoluminescence spectral broadening was attributed to electronic wavefunction coupling between adjacent silicon nanocrystals. An novel device structure was also investigated in an effort to improve current injection into the porous silicon layer. The selective etching properties of porous silicon were used to create a p-i-n structure with crystalline silicon contacts to the porous silicon layer. The resulting device was found to have unique characteristics, with a negative differential resistance region and current-induced emission that spanned from 400 nm to 5500 nm. The negative differential resistance was correlated to resistive heating effects in the device. A numerical analysis of thermal emission spectra from silicon films, in addition to

  19. Hydrogenated microcrystalline silicon electrodes connected by indium phosphide nanowires

    NASA Astrophysics Data System (ADS)

    Kobayashi, Nobuhiko P.; VJ, Logeeswaran; Saif Islam, M.; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Stanley Williams, R.; Chen, Yong

    2007-09-01

    The authors report the connection of two planar hydrogenated silicon (Si:H) electrodes by intersecting and bridging indium phosphide nanowires (InP NWs). A simple metal-semiconductor-metal photoconductor was used as a test vehicle to measure electrical and optical characteristics of the connected InP NWs. This implementation of III-V compound semiconductor nanowires on Si:H combines the characteristics of a direct bandgap semiconductor with the flexible fabrication processes of non-single-crystal silicon platforms that do not require single-crystal substrates.

  20. Fabrication of sinterable silicon nitride by injection molding

    NASA Technical Reports Server (NTRS)

    Quackenbush, C. L.; French, K.; Neil, J. T.

    1982-01-01

    Transformation of structural ceramics from the laboratory to production requires development of near net shape fabrication techniques which minimize finish grinding. One potential technique for producing large quantities of complex-shaped parts at a low cost, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material. Binder selection methodology, compounding of ceramic and binder components, injection molding techniques, and problems in binder removal are discussed. Strength, oxidation resistance, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material.

  1. Integration of InP-based optoelectronics with silicon waveguides

    NASA Astrophysics Data System (ADS)

    Aalto, Timo; Harjanne, Mikko; Kapulainen, Markku; Ylinen, Sami; Ollila, Jyrki; Vilokkinen, Ville; Mörl, Ludwig; Möhrle, Martin; Hamelin, Régis

    2009-02-01

    Compound semiconductors provide state-of-the-art performance in optoelectronics, while silicon-on-insulator (SOI) is an ideal platform for many passive functions in integrated optics. By combining them one can realise optical devices with high performance and low cost. This paper discusses the various applications and technologies for integrating InP chips with SOI waveguides. Bonding of lasers, SOA arrays and detectors for practical applications is described. Experimental results are given for visually aligned thermo-compression bonding and self-aligned flip-chip bonding with Indium bumps. Flip-chip bonding is reported directly on SOI chips, as well as on a separate silicon-optical-bench.

  2. Silicon carbide reinforced silicon carbide composite

    NASA Technical Reports Server (NTRS)

    Lau, Sai-Kwing (Inventor); Calandra, Salvatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    2001-01-01

    This invention relates to a process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  3. Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial

    SciTech Connect

    Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

    2004-11-08

    In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

  4. Characterization of high purity Silicon derived from Rice husk through improved Leaching process

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Awodugba, Ayodeji; Raimi, Adepoju; Babatola, Babatunde

    2014-03-01

    Rice husk is an abundant source of silicon and silicon compounds. High purity Silicon are required in high technology products such as semiconductors and solar cell. In this work, the possibility of obtaining pure silicon compounds through leaching process was investigated. Mesoporous silica nanoparticles with amorphous morphology have been synthesized from rice husk which was further subjected to improved leaching process to obtain pure silicon. XRD analysis shows the crystal structure of the as-received RHA with major reflections or peaks of crystalline quartz from ICSD powder diffraction occur at Bragg 2 θ angles of 20.856°, 26.636° and 36.541°. The purity of silicon obtained in terms of silica content was improved by leaching in 10 wt% hydrochloric acid. Advance future works on characterizing the electrical properties of the refined Rice Husk will eventually add value to the Rice Husk Silicon product and make it more attractive not only to the Photovoltaic industry but also other industries that require high purity silicon at reasonable cost. We wish to thank the Managements of Osun state Polytechnic-Iree and Ladoke Akintola University of Technology-Ogbomoso for creating enabling environment for this research work.

  5. Silicon cladding for mirror substrates

    NASA Astrophysics Data System (ADS)

    Duston, Christopher J.; Gunda, Nilesh; Schwartz, Jay R.; Robichaud, Joseph L.

    2009-08-01

    To reduce the finishing costs of silicon carbide mirror substrates, silicon claddings are applied allowing the surfaces to be more easily diamond turned and polished than the bare chemical vapor deposited (CVD) silicon carbide or bimodal reaction bonded SiC (RB-SiC). The benefits of using silicon as the optical face will be reviewed as will the process for applying plasma enhanced chemical vapor (PE-CVD) deposited amorphous silicon cladding on substrates. Using one mirror as an example, the successful finishing results will be shared.

  6. Plasma Deposition of Amorphous Silicon

    NASA Technical Reports Server (NTRS)

    Calcote, H. F.

    1982-01-01

    Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.

  7. Selective formation of porous silicon

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  8. Selective formation of porous silicon

    NASA Technical Reports Server (NTRS)

    Fathauer, Jones (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  9. Electroluminescence from silicon nanowires

    NASA Astrophysics Data System (ADS)

    Huo, J.; Solanki, R.; Freeouf, J. L.; Carruthers, J. R.

    2004-12-01

    Room temperature electroluminescence has been demonstrated from undoped silicon nanowires that were grown from disilane. Ensembles of nanowires were excited by capacitively coupling them to an ac electric field. The emission peak occurred at about 600 nm from wires of average diameter of about 4 nm. The emission appears to result from band-to-band electron-hole recombination.

  10. Composition Comprising Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  11. The LHCb Silicon Tracker

    NASA Astrophysics Data System (ADS)

    Tobin, Mark

    2013-12-01

    The LHCb experiment is designed to perform high-precision measurements of CP violation and search for new physics using the enormous flux of beauty and charm hadrons produced at the LHC. The LHCb detector is a single-arm spectrometer with excellent tracking and particle identification capabilities. The Silicon Tracker is part of the tracking system and measures very precisely the particle trajectories coming from the interaction point in the region of high occupancies around the beam axis. The LHCb Silicon Tracker covers a total sensitive area of about 12 m2 using silicon micro-strip detectors with long readout strips. It consists of one four-layer tracking station before the LHCb dipole magnet and three stations after. The detector has performed extremely well since the start of the LHC operation despite the fact that the experiment is collecting data at instantaneous luminosities well above the design value. This paper reports on the operation and performance of the Silicon Tracker during the Physics data taking at the LHC during the last two years.

  12. Sintering silicon nitride

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P. (Inventor); Levine, Stanley R. (Inventor); Sanders, William A. (Inventor)

    1993-01-01

    Oxides having a composition of (Ba(1-x)Sr(x))O-Al2O3-2SiO2 are used as sintering aids for producing an improved silicon nitride ceramic material. The x must be greater than 0 to insure the formation of the stable monoclinic celsian glass phase.

  13. Silicone/Acrylate Copolymers

    NASA Technical Reports Server (NTRS)

    Dennis, W. E.

    1982-01-01

    Two-step process forms silicone/acrylate copolymers. Resulting acrylate functional fluid is reacted with other ingredients to produce copolymer. Films of polymer were formed by simply pouring or spraying mixture and allowing solvent to evaporate. Films showed good weatherability. Durable, clear polymer films protect photovoltaic cells.

  14. Silicone containing solid propellant

    NASA Technical Reports Server (NTRS)

    Ramohalli, K. N. R. (Inventor)

    1980-01-01

    The addition of a small amount, for example 1% by weight, of a liquid silicone oil to a metal containing solid rocket propellant provides a significant reduction in heat transfer to the inert nozzle walls. Metal oxide slag collection and blockage of the nozzle are eliminated and the burning rate is increased by about 5% to 10% thus improving ballistic performance.

  15. Amorphous silicon photovoltaic devices

    SciTech Connect

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  16. Silicon oxidation in fluoride solutions

    NASA Technical Reports Server (NTRS)

    Sancier, K. M.; Kapur, V.

    1980-01-01

    Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

  17. Improved toughness of silicon carbide

    NASA Technical Reports Server (NTRS)

    Palm, J. A.

    1975-01-01

    Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

  18. Channeling of aluminum in silicon

    SciTech Connect

    Wilson, R.G.; Hopkins, C.G.

    1985-05-15

    A systematic study of channeling of aluminum in the silicon crystal is reported. Depth distributions measured by secondary ion mass spectrometry are reported for 40-, 75-, and 150-keV aluminum channeled in the <100> and <110> directions of silicon. The profile dependence on alignment angle is shown for 150-keV aluminum in the <110> of silicon. Aluminum has low electronic stopping in silicon and corresponding deep channeled profiles are observed for aligned implants and deep channeling tails are observed on random implants. The maximum channeling range for 150-keV Al in <100> silicon is about 2.8 ..mu..m and is about 6.4 ..mu..m in <110> silicon. Some ions will reach the maximum channeling range even for 2/sup 0/ misalignment. Many of the deep channeling tails and ''supertails'' reported in earlier literature can be explained by the normal channeling of aluminum in silicon.

  19. Silicon Nanowire Devices

    NASA Astrophysics Data System (ADS)

    Kamins, Theodore

    2006-03-01

    Metal-catalyzed, self-assembled, one-dimensional semiconductor nanowires are being considered as possible device elements to augment and supplant conventional electronics and to extend the use of CMOS beyond the physical and economic limits of conventional technology. Such nanowires can create nanostructures without the complexity and cost of extremely fine scale lithography. The well-known and controllable properties of silicon make silicon nanowires especially attractive. Easy integration with conventional electronics will aid their acceptance and incorporation. For example, connections can be formed to both ends of a nanowire by growing it laterally from a vertical surface formed by etching the top silicon layer of a silicon-on-insulator structure into isolated electrodes. Field-effect structures are one class of devices that can be readily built in silicon nanowires. Because the ratio of surface to volume in a thin nanowire is high, conduction through the nanowire is very sensitive to surface conditions, making it effective as the channel of a field-effect transistor or as the transducing element of a gas or chemical sensor. As the nanowire diameter decreases, a greater fraction of the mobile charge can be modulated by a given external charge, increasing the sensitivity. Having the gate of a nanowire transistor completely surround the nanowire also enhances the sensitivity. For a field-effect sensor to be effective, the charge must be physically close to the nanowire so that the majority of the compensating charge is induced in the nanowire and so that ions in solution do not screen the charge. Because only induced charge is being sensed, a coating that selectively binds the target species should be added to the nanowire surface to distinguish between different species in the analyte. The nanowire work at Hewlett-Packard Laboratories was supported in part by the Defense Advanced Research Projects Agency.

  20. Pnictogen-Silicon Analogues of Benzene.

    PubMed

    Seitz, Andreas E; Eckhardt, Maria; Erlebach, Andreas; Peresypkina, Eugenia V; Sierka, Marek; Scheer, Manfred

    2016-08-24

    Since the discovery of the first "inorganic benzene" (borazine, B3N3H6), the synthesis of other noncarbon derivatives is an ongoing challenge in Inorganic Chemistry. Here we report on the synthesis of the first pnictogen-silicon congeners of benzene, the triarsa- and the triphospha-trisilabenzene [(PhC(NtBu)2)3Si3E3] (E = P (1a), As (1b)) by a simple metathesis reaction. These compounds are formed by the reaction of [Cp″2Zr(η(1:1)-E4)] (E = P, As; Cp″ = C5H3tBu2) with [PhC(NtBu)2SiCl] in toluene at room temperature along with the silicon pnictogen congeners of the cyclobutadiene, [(PhC(NtBu)2)2Si2E2] (E = P (2a), As (2b)), which is unprecedented for the arsenic system 2b. All compounds were comprehensively characterized, and density functional theory calculations were performed to verify the stability and the aromatic character of the triarsa- and the triphospha-trisilabenzene. PMID:27513314

  1. Amorphous silicon-tellurium alloys

    NASA Astrophysics Data System (ADS)

    Shufflebotham, P. K.; Card, H. C.; Kao, K. C.; Thanailakis, A.

    1986-09-01

    Amorphous silicon-tellurium alloy thin films were fabricated by coevaporation over the composition range of 0-82 at. % Te. The electronic and optical properties of these films were systematically investigated over this same range of composition. The optical gap of these films was found to decrease monotonically with increasing Te content. Conduction near room temperature was due to extended state conduction, while variable range hopping dominated below 250 K. The incorporation of Te in concentrations of less than 1 at. % was found to produce an increase in the density of localized states at the Fermi level and a decrease in the activation energy. This was attributed to the Te being incorporated as a substitutional, fourfold coordinated, double donor in a-Si. At approximately 60 at. % Te, a decrease in the density of localized states at the Fermi level, and an increase in the activation energy and photoresponse was indicated. This was attributed to the possible formation of a less defective a-Si:Te compound.

  2. Compounding in Ukraine.

    PubMed

    Zdoryk, Oleksandr A; Georgiyants, Victoriya A; Gryzodub, Oleksandr I; Schnatz, Rick

    2013-01-01

    Pharmaceutical compounding in modern Ukraine has a rich history and goes back to ancient times. Today in the Ukraine, there is a revival of compounding practice, the opening of private compounding pharmacies, updating of legislative framework and requirements of the State Pharmacopeia of Ukraine for compounding preparations, and the introduction of Good Pharmaceutical Practice. PMID:23696172

  3. New doping method to obtain n-type silicon ribbons

    NASA Astrophysics Data System (ADS)

    Silva, J. A.; Platte, B.; Brito, M. C.; Serra, J. M.

    2015-10-01

    A method to dope silicon ribbons is presented. The method consists on the spraying of the ribbons with a phosphoric acid solution followed by a recrystallization in an optical heating furnace. During the sample heating, as phosphoric acid is dehydrated the resulting phosphorous compounds are either evaporated or serve as source for phosphorous diffusion. Phosphorous is efficiently incorporated in silicon by solid-state diffusion during heating and directly mixed in the melted silicon. Experimental results show significant incorporation gradients along the samples' length. The origin of the incorporation gradient is analysed, by testing the effect of experimental parameters such as the argon flux and the recrystallization velocity and direction. It is shown that samples recrystallized in a downward direction have homogeneous doping profiles over most of the length.

  4. Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

  5. Top-Coating Silicon Onto Ceramic

    NASA Technical Reports Server (NTRS)

    Heaps, J. D.; Nelson, L. D.; Zook, J. D.

    1985-01-01

    Polycrystalline silicon for solar cells produced at low cost. Molten silicon poured from quartz trough onto moving carbon-coated ceramic substrate. Doctor blade spreads liquid silicon evenly over substrate. Molten material solidifies to form sheet of polycrystalline silicon having photovoltaic conversion efficiency greater than 10 percent. Method produces 100-um-thick silicon coatings at speed 0.15 centimeter per second.

  6. Friction, wear, and thermal stability studies of some organotin and organosilicon compounds

    NASA Technical Reports Server (NTRS)

    Jones, W. R., Jr.

    1973-01-01

    Thermal decomposition temperatures were determined for a number of organotin and organosilicon compounds. A ball-on-disk sliding friction apparatus was used to determine the friction and wear characteristics of two representative compounds, (1) 3-tri-n-butylstannyl (diphenyl) and (2) 3-tri-n-butylsilyl (diphenyl). Friction and wear test conditions included a 1-kg load, 25 to 225 C disk temperatures, and a dry air atmosphere. The tin and silicon compounds yielded friction and wear results either lower than or similar to those obtained with a polyphenyl ether and a C-ether. The maximum thermal decomposition temperatures obtained in the silicon and tin series were 358 and 297 C, respectively. Increasing the steric hindrance around the silicon or tin atoms increased the thermal stability. Future work with these compounds will emphasize their use as antiwear additives rather than base fluids.

  7. The LHCb silicon tracker

    NASA Astrophysics Data System (ADS)

    Adeva, B.; Agari, M.; Bauer, C.; Baumeister, D.; Bay, A.; Bernhard, R. P.; Bernet, R.; Blouw, J.; Carron, B.; Ermoline, Y.; Esperante, D.; Frei, R.; Gassner, J.; Hofmann, W.; Jimenez-Otero, S.; Knöpfle, K. T.; Köstner, S.; Lehner, F.; Löchner, S.; Lois, C.; Needham, M.; Pugatch, V.; Schmelling, M.; Schwingenheuer, B.; Siegler, M.; Steinkamp, O.; Straumann, U.; Tran, M. T.; Vazquez, P.; Vollhardt, A.; Volyanskyy, D.; Voss, H.

    2005-07-01

    LHCb is a dedicated B-physics and CP-violation experiment for the Large Hadron Collider at CERN. Efficient track reconstruction and excellent trigger performances are essential in order to exploit fully its physics potential. Silicon strip detectors providing fast signal generation, high resolution and fine granularity are used for this purpose in the large area Trigger Tracker station in front of the spectrometer magnet and the LHCb Inner Tracker covering the area close to the beam pipe behind the magnet. Long read-out strips of up to 38 cm are used together with fast signal shaping adapted to the 25 ns LHC bunch crossing. The design of these tracking stations, the silicon sensor strip geometries and the latest test results are presented here.

  8. Multicolored Vertical Silicon Nanowires

    SciTech Connect

    Seo, Kwanyong; Wober, Munib; Steinvurzel, P.; Schonbrun, E.; Dan, Yaping; Ellenbogen, T.; Crozier, K. B.

    2011-04-13

    We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.

  9. Silicon Carbide Electronic Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  10. Making silicon stronger.

    SciTech Connect

    Boyce, Brad Lee

    2010-11-01

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.