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Sample records for implement dynamic wafer

  1. Implementation strategy of wafer-plane and aerial-plane inspection for advanced mask manufacture

    NASA Astrophysics Data System (ADS)

    Kim, Won-Sun; Chung, Dong-Hoon; Jeon, Chan-Uk; Cho, HanKu; Huang, William; Miller, John; Inderhees, Gregg; Pinto, Becky; Hur, Jiuk; Park, Kihun; Han, Jay

    2009-04-01

    Inspection of aggressive Optical Proximity Correction (OPC) designs, improvement of usable sensitivity, and reduction of cost of ownership are the three major challenges for today's mask inspection methodologies. In this paper we will discuss using aerial-plane inspection and wafer-plane inspection as novel approaches to address these challenges for advanced reticles. Wafer-plane inspection (WPI) and aerial-plane inspection (API) are two lithographic inspection modes. This suite of new inspection modes is based on high resolution reflected and transmitted light images in the reticle plane. These images together with scanner parameters are used to generate the aerial plane image using either vector or scalar models. Then information about the resist is applied to complete construction of the wafer plane image. API reports defects based on intensity differences between test and reference images at the aerial plane, whereas WPI applies a resist model to the aerial image to enhance discrimination between printable and non-printable defects at the wafer plane. The combination of WPI and API along with the industry standard Reticle Plane Inspection (RPI) is designed to handle complex OPC features, improve usable sensitivity and reduce the cost of ownership. This paper will explore the application of aerial-plane and wafer-plane die-to-die inspections on advanced reticles. Inspection sensitivity, inspectability, and comparison with Aerial Imaging Measurement System (AIMSTM[1]) or wafer-print-line will be analyzed. Most importantly, the implementation strategy of a combination of WPI and API along with RPI leading-edge mask manufacturing will be discussed.

  2. Modeling of hydrophilic wafer bonding by molecular dynamics simulations

    SciTech Connect

    Litton, David A.; Garofalini, Stephen H.

    2001-06-01

    The role of moisture in hydrophilic wafer bonding was modeled using molecular dynamics computer simulations of interface formation between amorphous silica surfaces. Three different surface treatments were used in order to determine the effect of moisture on the formation of siloxane (Si{endash}O{endash}Si) bridges across the interface at two temperatures. The three surface conditions that were studied were: (a) wet interfaces containing 1 monolayer of water adsorbed at the interface (based on the room temperature bulk density of water), (b) hydroxylated interfaces with concentrations of 3{endash}5 silanols/nm2 on each surface and no excess water molecules initially in the system, and (c) pristine interfaces that had only Si and O and no water or H present. The surfaces were slowly brought together and siloxane bond formation was monitored. In the pristine interfaces, siloxane bridges formed across the interface by the coalescence of various defect species in each surface. A bimodal distribution of siloxane bond angles formed during the first 2.5 Aa of approach after the first siloxane bond was formed. These bond angles were much lower than and higher than the bulk average, indicating the formation of less stable bonds. The hydroxylated (with no excess water) and wet surfaces showed a more uniform distribution of siloxane bond angles, with no highly reactive small bond angles forming. The presence of water molecules enhanced H-bond formation across the interface, but trapped water molecules inhibited formation of the strong siloxane bridges across the interface. In real systems, high temperatures are required to remove this trapped moisture. {copyright} 2001 American Institute of Physics.

  3. Implementation of a gap-closing differential capacitive sensing Z-axis accelerometer on an SOI wafer

    NASA Astrophysics Data System (ADS)

    Hsu, Chia-Pao; Yip, Ming-Chuen; Fang, Weileun

    2009-07-01

    This study presents a novel capacitive-type Z-axis (out-of-plane) accelerometer implemented on an SOI wafer. This accelerometer contains special designed gap-closing differential sensing electrodes. The present Z-axis accelerometer has four merits: (1) mass of the proof mass is increased by combining both device and handle silicon layers of the SOI wafer, (2) the sensitivity is improved by the gap-closing differential electrodes design, (3) the electrical interconnection between the device and handle silicon layers of the SOI wafer is available by means of the metal-vias, and (4) the sensing gap thickness is precisely defined by the buried-oxide layer of the SOI wafer. In application, the Z-axis accelerometer is fabricated and characterized. Typical measurement results demonstrate that the presented Z-axis accelerometer has a sensitivity of 196.3 mV G-1 (42.5 fF G-1) and a maximum nonlinearity of 2% over the range of 0.1-1 G.

  4. Glass Transition of Polystyrene Thin Films on Silicon Wafer Measured by Dynamic Mechanical Analysis and Ellipsometry

    NASA Astrophysics Data System (ADS)

    Jackson, Catheryn; Lan, Tian; Caporale, Stefan; Torkelson, John

    Measuring the glass transition temperature, Tg, of polymer films in the thickness range of 20-500 nm is non-routine but commercially important for polymer films used in applications such as membranes and electronic circuit boards. Various specialized methods have been used or developed to determine Tg in thin films, including thermal ellipsometry and many others. Differential scanning calorimetry (DSC) is a more conventional method that has been used to measure Tg, but since the thin films must be scraped from the wafer, consolidation and annealing can occur in the pan and may negate effects due to film thickness. Here we report results for polystyrene (PS) spin coated on silicon wafers in the range of 20-500 nm using a benchtop dynamic mechanical analyzer (DMA) in the 3-point bending mode. For the DMA, the peak tan δ temperature is related to the polymer Tg and effects due to confinement as a function of film thickness are compared to literature values. We use thermal ellipsometry as a control method to measure film thickness and Tg in parallel. Low level additives present in commercial PS were observed to strongly affect the results for thin films and are described.

  5. Wafer-scale fabrication and growth dynamics of suspended graphene nanoribbon arrays

    NASA Astrophysics Data System (ADS)

    Suzuki, Hiroo; Kaneko, Toshiro; Shibuta, Yasushi; Ohno, Munekazu; Maekawa, Yuki; Kato, Toshiaki

    2016-06-01

    Adding a mechanical degree of freedom to the electrical and optical properties of atomically thin materials can provide an excellent platform to investigate various optoelectrical physics and devices with mechanical motion interaction. The large scale fabrication of such atomically thin materials with suspended structures remains a challenge. Here we demonstrate the wafer-scale bottom-up synthesis of suspended graphene nanoribbon arrays (over 1,000,000 graphene nanoribbons in 2 × 2 cm2 substrate) with a very high yield (over 98%). Polarized Raman measurements reveal graphene nanoribbons in the array can have relatively uniform-edge structures with near zigzag orientation dominant. A promising growth model of suspended graphene nanoribbons is also established through a comprehensive study that combined experiments, molecular dynamics simulations and theoretical calculations with a phase-diagram analysis. We believe that our results can contribute to pushing the study of graphene nanoribbons into a new stage related to the optoelectrical physics and industrial applications.

  6. Clean solutions to the incoming wafer quality impact on lithography process yield limits in a dynamic copper/low-k research and development environment

    NASA Astrophysics Data System (ADS)

    Lysaght, Patrick S.; Ybarra, Israel; Sax, Harry; Gupta, Gaurav; West, Michael; Doros, Theodore G.; Beach, James V.; Mello, Jim

    2000-06-01

    The continued growth of the semiconductor manufacturing industry has been due, in large part, to improved lithographic resolution and overlay across increasingly larger chip areas. Optical lithography continues to be the mainstream technology for the industry with extensions of optical lithography being employed to support 180 nm product and process development. While the industry momentum is behind optical extensions to 130 nm, the key challenge will be maintaining an adequate and affordable process latitude (depth of focus/exposure window) necessary for 10% post-etch critical dimension (CD) control. If the full potential of optical lithography is to be exploited, the current lithographic systems can not be compromised by incoming wafer quality. Impurity specifications of novel Low-k dielectric materials, plating solutions, chemical-mechanical planarization (CMP) slurries, and chemical vapor deposition (CVD) precursors are not well understood and more stringent control measures will be required to meet defect density targets as identified in the National Technology Roadmap for Semiconductors (NTRS). This paper identifies several specific poor quality wafer issues that have been effectively addressed as a result of the introduction of a set of flexible and reliable wafer back surface clean processes developed on the SEZ Spin-Processor 203 configured for processing of 200 mm diameter wafers. Patterned wafers have been back surface etched by means of a novel spin process contamination elimination (SpCE) technique with the wafer suspended by a dynamic nitrogen (N2) flow, device side down, via the Bernoulli effect. Figure 1 illustrates the wafer-chuck orientation within the process chamber during back side etch processing. This paper addresses a number of direct and immediate benefits to the MicraScan IIITM deep-ultraviolet (DUV) step-and-scan system at SEMATECH. These enhancements have resulted from the resolution of three significant problems: (1) back surface

  7. Wafer-scale fabrication and growth dynamics of suspended graphene nanoribbon arrays

    PubMed Central

    Suzuki, Hiroo; Kaneko, Toshiro; Shibuta, Yasushi; Ohno, Munekazu; Maekawa, Yuki; Kato, Toshiaki

    2016-01-01

    Adding a mechanical degree of freedom to the electrical and optical properties of atomically thin materials can provide an excellent platform to investigate various optoelectrical physics and devices with mechanical motion interaction. The large scale fabrication of such atomically thin materials with suspended structures remains a challenge. Here we demonstrate the wafer-scale bottom–up synthesis of suspended graphene nanoribbon arrays (over 1,000,000 graphene nanoribbons in 2 × 2 cm2 substrate) with a very high yield (over 98%). Polarized Raman measurements reveal graphene nanoribbons in the array can have relatively uniform-edge structures with near zigzag orientation dominant. A promising growth model of suspended graphene nanoribbons is also established through a comprehensive study that combined experiments, molecular dynamics simulations and theoretical calculations with a phase-diagram analysis. We believe that our results can contribute to pushing the study of graphene nanoribbons into a new stage related to the optoelectrical physics and industrial applications. PMID:27250877

  8. Wafer screening device and methods for wafer screening

    DOEpatents

    Sopori, Bhushan; Rupnowski, Przemyslaw

    2014-07-15

    Wafer breakage is a serious problem in the photovoltaic industry because a large fraction of wafers (between 5 and 10%) break during solar cell/module fabrication. The major cause of this excessive wafer breakage is that these wafers have residual microcracks--microcracks that were not completely etched. Additional propensity for breakage is caused by texture etching and incomplete edge grinding. To eliminate the cost of processing the wafers that break, it is best to remove them prior to cell fabrication. Some attempts have been made to develop optical techniques to detect microcracks. Unfortunately, it is very difficult to detect microcracks that are embedded within the roughness/texture of the wafers. Furthermore, even if such detection is successful, it is not straightforward to relate them to wafer breakage. We believe that the best way to isolate the wafers with fatal microcracks is to apply a stress to wafers--a stress that mimics the highest stress during cell/module processing. If a wafer survives this stress, it has a high probability of surviving without breakage during cell/module fabrication. Based on this, we have developed a high throughput, noncontact method for applying a predetermined stress to a wafer. The wafers are carried on a belt through a chamber that illuminates the wafer with an intense light of a predetermined intensity distribution that can be varied by changing the power to the light source. As the wafers move under the light source, each wafer undergoes a dynamic temperature profile that produces a preset elastic stress. If this stress exceeds the wafer strength, the wafer will break. The broken wafers are separated early, eliminating cost of processing into cell/module. We will describe details of the system and show comparison of breakage statistics with the breakage on a production line.

  9. Investigation of optically injected charge carrier dynamics in silicon wafers using terahertz spectroscopic imaging

    NASA Astrophysics Data System (ADS)

    Arnold, Thomas; De Biasio, Martin; Muehleisen, Wolfgang; Leitner, Raimund

    2012-06-01

    Terahertz (THz) time-domain spectroscopy has proven to be a promising technology for a wide range of applications, such as inspection of nished products or materials, quality control, biomedical imaging and diagnostics, counterfeit detection and characterization of semiconductors. This paper investigates the applicability of THz time-domain spectroscopy for the characterization of silicon solar cell properties such as: conductivity, charge carrier mobility and density. Moreover, the possibilities for THz spectroscopy and imaging for the defect analysis in semiconductor and photovoltaic materials are investigated. THz-pump/THz-probe measurements were carried out on silicon wafers which were illuminated by a halogen light source to inject free charge carriers. Initial results indicate that THz time-domain spectroscopy is a promising technique for the characterization of silicon wafers for the photovoltaic industry.

  10. Machining lead wafers

    SciTech Connect

    Schamaun, R.T.

    1987-09-01

    Recently, MEC-6 machined some 4-inch-diameter lead wafers to precision tolerances. The tolerance on the wafer thickness was +-0.000080 inch. A diamond tool was used to machine the wafers on a Moore No. 3 lathe. This report discusses the methods used to machine the wafers, the fixtures used to hold the wafers, and the inspection methods and results.

  11. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

    SciTech Connect

    Kim, Jeonghee Laurent, Matthew A.; Li, Haoran; Lal, Shalini; Mishra, Umesh K.

    2015-01-12

    This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V{sub GS} = 0 V and L{sub go} = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials.

  12. Performance Evaluations of Ceramic Wafer Seals

    NASA Technical Reports Server (NTRS)

    Dunlap, Patrick H., Jr.; DeMange, Jeffrey J.; Steinetz, Bruce M.

    2006-01-01

    Future hypersonic vehicles will require high temperature, dynamic seals in advanced ramjet/scramjet engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Seal temperatures in these locations can exceed 2000 F, especially when the seals are in contact with hot ceramic matrix composite sealing surfaces. NASA Glenn Research Center is developing advanced ceramic wafer seals to meet the needs of these applications. High temperature scrub tests performed between silicon nitride wafers and carbon-silicon carbide rub surfaces revealed high friction forces and evidence of material transfer from the rub surfaces to the wafer seals. Stickage between adjacent wafers was also observed after testing. Several design changes to the wafer seals were evaluated as possible solutions to these concerns. Wafers with recessed sides were evaluated as a potential means of reducing friction between adjacent wafers. Alternative wafer materials are also being considered as a means of reducing friction between the seals and their sealing surfaces and because the baseline silicon nitride wafer material (AS800) is no longer commercially available.

  13. Organizational Readiness for Stage-Based Dynamics of Innovation Implementation

    ERIC Educational Resources Information Center

    Simpson, D. Dwayne

    2009-01-01

    Implementing innovations in social and health-related service programs is a dynamic stage-based process. This article discusses training, adoption, implementation, and practice as sequential elements of a conceptual framework for effective preparation and implementation of evidence-based innovations. However, systems need to be prepared for change…

  14. Wafer-level reliability characterization for wafer-level packaged microbolometer with ultra-small array size

    NASA Astrophysics Data System (ADS)

    Kim, Hee Yeoun; Yang, Chungmo; Park, Jae Hong; Jung, Ho; Kim, Taehyun; Kim, Kyung Tae; Lim, Sung Kyu; Lee, Sang Woo; Mitchell, Jay; Hwang, Wook Joong; Lee, Kwyro

    2013-06-01

    For the development of small and low cost microbolometer, wafer level reliability characterization techniques of vacuum packaged wafer are introduced. Amorphous silicon based microbolometer-type vacuum sensors fabricated in 8 inch wafer are bonded with cap wafer by Au-Sn eutectic solder. Membrane deflection and integrated vacuum sensor techniques are independently used to characterize the hermeticity in a wafer-level. For the packaged wafer with membrane thickness below 100um, it is possible to determine the hermeticity as screening test by optical detection technique. Integrated vacuum sensor having the same structure as bolometer pixel shows the vacuum level below 100mTorr. All steps from packaging process to fine hermeticity test are implemented in wafer level to prove the high volume and low cost production.

  15. Scriber for silicon wafers

    NASA Technical Reports Server (NTRS)

    Yamakawa, K. A.; Fortier, E. P. (Inventor)

    1981-01-01

    A device for dividing silicon wafers into rectangular chips is characterized by a base including a horizontally oriented bed with a planar support surface, a vacuum chuck adapted to capture a silicon wafer seated on the support for translation in mutually perpendicular directions. A stylus support mounted on the bed includes a shaft disposed above and extended across the bed and a truck mounted on the shaft and supported thereby for linear translation along a path extended across the bed a vertically oriented scribe has a diamond tip supported by the truck also adapted as to engage a silicon wafer captured by the chuck and positioned beneath it in order to form score lines in the surface of the wafer as linear translation is imparted to the truck. A chuck positioning means is mounted on the base and is connected to the chuck for positioning the chuck relative to the stylus.

  16. Wafer characteristics via reflectometry

    DOEpatents

    Sopori, Bhushan L.

    2010-10-19

    Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.

  17. Reciprocating Saw for Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Morrison, A. D.; Collins, E. R., Jr.

    1985-01-01

    Concept increases productivity and wafer quality. Cutting wafers from silicon ingots produces smooth wafers at high rates with reduced blade wear. Involves straight reciprocating saw blade and slight rotation of ingot between cutting strokes. Many parallel blades combined to cut many wafers simultaneously from ingot.

  18. A User Driven Dynamic Circuit Network Implementation

    SciTech Connect

    Guok, Chin; Robertson, David; Chaniotakis, Evangelos; Thompson, Mary; Johnston, William; Tierney, Brian

    2008-10-01

    The requirements for network predictability are becoming increasingly critical to the DoE science community where resources are widely distributed and collaborations are world-wide. To accommodate these emerging requirements, the Energy Sciences Network has established a Science Data Network to provide user driven guaranteed bandwidth allocations. In this paper we outline the design, implementation, and secure coordinated use of such a network, as well as some lessons learned.

  19. Stable wafer-carrier system

    DOEpatents

    Rozenzon, Yan; Trujillo, Robert T; Beese, Steven C

    2013-10-22

    One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.

  20. Investigation of intrinsic gettering for germanium doped Czochralski silicon wafer

    NASA Astrophysics Data System (ADS)

    Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Wang, Weiyan; Zeng, Yuheng; Que, Duanlin

    2007-06-01

    The intrinsic gettering (IG) effects in a germanium-doped Czochralski (GCz) silicon wafer have been investigated through a processing simulation of dynamic random access memory making and an evaluation on IG capability for copper contamination. It has been suggested that both the good quality defect-free denuded zones (DZs) and the high-density bulk microdefect (BMD) regions could be generated in GCz silicon wafer during device fabrication. Meanwhile, it was also indicated that the tiny oxygen precipitates were hardly presented in DZs of silicon wafer with the germanium doping. Furthermore, it was found in GCz silicon wafer that the BMDs were higher in density but smaller in size in contrast to that in conventional Cz silicon wafer. Promoted IG capability for metallic contamination was therefore induced in the germanium-doped Cz silicon wafer. A mechanism of the germanium doping on oxygen precipitation in Cz silicon was discussed, which was based on the hypothesis of germanium-related complexes.

  1. Structured wafer for device processing

    SciTech Connect

    Okandan, Murat; Nielson, Gregory N

    2014-05-20

    A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

  2. Structured wafer for device processing

    SciTech Connect

    Okandan, Murat; Nielson, Gregory N

    2014-11-25

    A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

  3. Within-wafer CD variation induced by wafer shape

    NASA Astrophysics Data System (ADS)

    Huang, Chi-hao; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

    2016-03-01

    In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked vertical flash cell array has been proposed. In constructing 3D NAND flash memories, the bit number per unit area is increased as increasing the number of stacked layers. However, the increased number of stacked layers has made the film stress control extremely important for maintaining good process quality. The residual film stress alters the wafer shape accordingly several process impacts have been readily observed across wafer, such as film deposition non-uniformity, etch rate non-uniformity, wafer chucking error on scanner, materials coating/baking defects, overlay degradation and critical dimension (CD) non-uniformity. The residual tensile and compressive stresses on wafers will result in concave and convex wafer shapes, respectively. This study investigates within-wafer CD uniformity (CDU) associated with wafer shape change induced by the 3D NAND flash memory processes. Within-wafer CDU was correlated with several critical parameters including different wafer bow heights of concave and convex wafer shapes, photo resists with different post exposure baking (PEB) temperature sensitivities, and DoseMapper compensation. The results indicated the trend of within-wafer CDU maintains flat for convex wafer shapes with bow height up to +230um and concave wafer shapes with bow height ranging from 0 ~ -70um, while the within-wafer CDU trends up from -70um to -246um wafer bow heights. To minimize the within-wafer CD distribution induced by wafer warpage, carefully tailoring the film stack and thermal budget in the process flow for maintaining the wafer shape at CDU friendly range is indispensable and using photo-resist materials with lower PEB temperature sensitivity is also suggested. In addition, DoseMapper compensation is also an alternative to greatly suppress the within-wafer CD non-uniformity but the photo-resist profile variation induced by across-wafer

  4. Dynamically tuned high-Q AC-dipole implementation

    SciTech Connect

    Oddo, P.; Bai, M.; Dawson, W.C.; Meng, W.; Mernick, K.; Pai, C.; Roser, T.; Russo, T.

    2010-05-02

    AC-dipole magnets are typically implemented as a parallel LC resonant circuit. To maximize efficiency, it's beneficial to operate at a high Q. This, however, limits the magnet to a narrow frequency range. Current designs therefore operate at a low Q to provide a wider bandwidth at the cost of efficiency. Dynamically tuning a high Q resonant circuit tries to maintain a high efficiency while providing a wide frequency range. The results of ongoing efforts at BNL to implement dynamically tuned high-Q AC dipoles will be presented.

  5. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  6. Minimum wafer thickness by rotated ingot ID wafering. [Inner Diameter

    NASA Technical Reports Server (NTRS)

    Chen, C. P.; Leipold, M. H.

    1984-01-01

    The efficient utilization of materials is critical to certain device applications such as silicon for photovoltaics or diodes and gallium-gadolinium-garnet for memories. A variety of slicing techniques has been investigated to minimize wafer thickness and wafer kerf. This paper presents the results of analyses of ID wafering of rotated ingots based on predicted fracture behavior of the wafer as a result of forces during wafering and the properties of the device material. The analytical model indicated that the minimum wafer thickness is controlled by the depth of surface damage and the applied cantilever force. Both of these factors should be minimized. For silicon, a minimum thickness was found to be approximately 200 x 10 - 6th m for conventional sizes of rotated ingot wafering. Fractures through the thickness of the wafer rather than through the center supporting column were found to limit the minimum wafer thickness. The model suggested that the use of a vacuum chuck on the wafer surface to enhance cleavage fracture of the center supporting core and, with silicon, by using 111-line-type ingots could have potential for reducing minimum wafer thickness.

  7. Wafer level warpage characterization of 3D interconnect processing wafers

    NASA Astrophysics Data System (ADS)

    Chang, Po-Yi; Ku, Yi-Sha

    2012-03-01

    We present a new metrology system based on a fringe reflection method for warpage characterizations during wafer thinning and temporary bonding processes. A set of periodic fringe patterns is projected onto the measuring wafer and the reflected fringe images are captured by a CCD camera. The fringe patterns are deformed due to the slope variation of the wafer surface. We demonstrate the use of phase-shit algorithms, the wafer surface slope variation and quantitative 3D surface profile even tiny dimples and dents on a wafer can be reconstructed. The experimental results show the warpages of the bonded wafer are below 20 μm after thinning down to the nominal thickness of 75 μm and 50 μm. The measurement precision is better than 2 um.

  8. Augmented reality for wafer prober

    NASA Astrophysics Data System (ADS)

    Gilgenkrantz, Pascal

    2011-03-01

    The link between wafer manufacturing and wafer test is often weak: without common information system, Test engineers have to read locations of test structures from reference documents and search them on the wafer prober screen. Mask Data Preparation team is ideally placed to fill this gap, given its relationship with both design and manufacturing sides. With appropriate design extraction scripts and design conventions, mask engineers can provide exact wafer locations of all embedded test structures to avoid a painful camera search. Going a step further, it would be a great help to provide to wafer probers a "map" of what was build on wafers. With this idea in mind, mask design database can simply be provided to Test engineers; but the real added value would come from a true integration of real-wafer camera views and design database used for wafer manufacturing. As proven by several augmented reality applications, like Google Maps' mixed Satellite/Map view, mixing a real-world view with its theoretical model is very useful to understand the reality. The creation of such interface can only be made by a wafer prober manufacturer, given the high integration of these machines with their control panel. But many existing software libraries could be used to plot the design view matching the camera view. Standard formats for mask design are usually GDSII and OASIS (SEMI P39 standard); multiple free software and commercial viewers/editors/libraries for these formats are available.

  9. Equipment and wafer modeling of batch furnaces by neural networks

    NASA Astrophysics Data System (ADS)

    Benesch, N.; Schneider, Claus; Lehnert, Wolfgang; Pfitzner, Lothar; Ryssel, Heiner

    1999-04-01

    In semiconductor manufacturing there is a great demand for innovations towards higher cost-effectiveness. The increasing employment of advanced control systems for process and equipment control is one means to improve manufacturing processes effectively and, hence, to lower costs. A precondition for an accurate and fast control is the availability of process models. In this paper neural networks are applied to non-linear system identification as an alternative or addition to physical models. Neural empirical models are developed with the help of measured input and output data of a system or process. After a brief summary of the theory of neural networks their application to system identification is described in detail. The capabilities of the neural network models are demonstrated by several examples. The temperature dynamics of a vertical furnace for the oxidation of 300 mm wafers as well as the zone temperatures of a 150 mm LPCVD furnace are simulated and the results are verified by measurements. Moreover, in order to control wafer temperatures in batch furnaces, an appropriate model was developed and implemented in a model- based controller.

  10. Design Study of Wafer Seals for Future Hypersonic Vehicles

    NASA Technical Reports Server (NTRS)

    Dunlap, Patrick H.; Finkbeiner, Joshua R.; Steinetz, Bruce M.; DeMange, Jeffrey J.

    2005-01-01

    Future hypersonic vehicles require high temperature, dynamic seals in advanced hypersonic engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Current seals do not meet the demanding requirements of these applications, so NASA Glenn Research Center is developing improved designs to overcome these shortfalls. An advanced ceramic wafer seal design has shown promise in meeting these needs. Results from a design of experiments study performed on this seal revealed that several installation variables played a role in determining the amount of leakage past the seals. Lower leakage rates were achieved by using a tighter groove width around the seals, a higher seal preload, a tighter wafer height tolerance, and a looser groove length. During flow testing, a seal activating pressure acting behind the wafers combined with simulated vibrations to seat the seals more effectively against the sealing surface and produce lower leakage rates. A seal geometry study revealed comparable leakage for full-scale wafers with 0.125 and 0.25 in. thicknesses. For applications in which lower part counts are desired, fewer 0.25-in.-thick wafers may be able to be used in place of 0.125-in.-thick wafers while achieving similar performance. Tests performed on wafers with a rounded edge (0.5 in. radius) in contact with the sealing surface resulted in flow rates twice as high as those for wafers with a flat edge. Half-size wafers had leakage rates approximately three times higher than those for full-size wafers.

  11. Implementation of the force decomposition machine for molecular dynamics simulations.

    PubMed

    Borštnik, Urban; Miller, Benjamin T; Brooks, Bernard R; Janežič, Dušanka

    2012-09-01

    We present the design and implementation of the force decomposition machine (FDM), a cluster of personal computers (PCs) that is tailored to running molecular dynamics (MD) simulations using the distributed diagonal force decomposition (DDFD) parallelization method. The cluster interconnect architecture is optimized for the communication pattern of the DDFD method. Our implementation of the FDM relies on standard commodity components even for networking. Although the cluster is meant for DDFD MD simulations, it remains general enough for other parallel computations. An analysis of several MD simulation runs on both the FDM and a standard PC cluster demonstrates that the FDM's interconnect architecture provides a greater performance compared to a more general cluster interconnect. PMID:23085166

  12. Gettering Silicon Wafers with Phosphorus

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.

    1983-01-01

    Silicon wafers subjected to gettering in phosphorus atmosphere have longer diffusion lengths and higher solar-cell efficiencies than untreated wafers. Gettering treatment improves properties of solar cells manufactured from impure silicon and is compatible with standard solar-cell processing.

  13. High-speed dynamic domino circuit implemented with gaas mesfets

    NASA Technical Reports Server (NTRS)

    Yang, Long (Inventor); Long, Stephen I. (Inventor)

    1990-01-01

    A dynamic logic circuit (AND or OR) utilizes one depletion-mode metal-semiconductor FET for precharging an internal node A, and a plurality of the same type of FETs in series, or a FET in parallel with one or more of the series connected FETs for implementing the logic function. A pair of FETs are connected to provide an output inverter with two series diodes for level shift. A coupling capacitor may be employed with a further FET to provide level shifting required between the inverter and the logic circuit output terminal. These circuits may be cascaded to form a domino chain.

  14. Design and implementation of dynamic hybrid Honeypot network

    NASA Astrophysics Data System (ADS)

    Qiao, Peili; Hu, Shan-Shan; Zhai, Ji-Qiang

    2013-05-01

    The method of constructing a dynamic and self-adaptive virtual network is suggested to puzzle adversaries, delay and divert attacks, exhaust attacker resources and collect attacking information. The concepts of Honeypot and Honeyd, which is the frame of virtual Honeypot are introduced. The techniques of network scanning including active fingerprint recognition are analyzed. Dynamic virtual network system is designed and implemented. A virtual network similar to real network topology is built according to the collected messages from real environments in this system. By doing this, the system can perplex the attackers when Hackers attack and can further analyze and research the attacks. The tests to this system prove that this design can successfully simulate real network environment and can be used in network security analysis.

  15. Wafer-level vacuum/hermetic packaging technologies for MEMS

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Hyun; Mitchell, Jay; Welch, Warren; Lee, Sangwoo; Najafi, Khalil

    2010-02-01

    An overview of wafer-level packaging technologies developed at the University of Michigan is presented. Two sets of packaging technologies are discussed: (i) a low temperature wafer-level packaging processes for vacuum/hermeticity sealing, and (ii) an environmentally resistant packaging (ERP) technology for thermal and mechanical control as well as vacuum packaging. The low temperature wafer-level encapsulation processes are implemented using solder bond rings which are first patterned on a cap wafer and then mated with a device wafer in order to encircle and encapsulate the device at temperatures ranging from 200 to 390 °C. Vacuum levels below 10 mTorr were achieved with yields in an optimized process of better than 90%. Pressures were monitored for more than 4 years yielding important information on reliability and process control. The ERP adopts an environment isolation platform in the packaging substrate. The isolation platform is designed to provide low power oven-control, vibration isolation and shock protection. It involves batch flip-chip assembly of a MEMS device onto the isolation platform wafer. The MEMS device and isolation structure are encapsulated at the wafer-level by another substrate with vertical feedthroughs for vacuum/hermetic sealing and electrical signal connections. This technology was developed for high performance gyroscopes, but can be applied to any type of MEMS device.

  16. Through-wafer optical probe characterization for microelectromechanical systems positional state monitoring and feedback control

    NASA Astrophysics Data System (ADS)

    Dawson, Jeremy M.; Chen, Jingdong; Brown, Kolin S.; Famouri, Parviz F.; Hornak, Lawrence A.

    2000-12-01

    Implementation of closed-loop microelectromechanical system (MEMS) control enables mechanical microsystems to adapt to the demands of the environment that they are actuating, opening a broad range of new opportunities for future MEMS applications. Integrated optical microsystems have the potential to enable continuous in situ optical interrogation of MEMS microstructure position fully decoupled from the means of mechanical actuation that is necessary for realization of feedback control. We present the results of initial research evaluating through-wafer optical microprobes for surface micromachined MEMS integrated optical position monitoring. Results from the through-wafer free-space optical probe of a lateral comb resonator fabricated using the multiuser MEMS process service (MUMPS) indicate significant positional information content with an achievable return probe signal dynamic range of up to 80% arising from film transmission contrast. Static and dynamic deflection analysis and experimental results indicate a through-wafer probe positional signal sensitivity of 40 mV/micrometers for the present setup or 10% signal change per micrometer. A simulation of the application of nonlinear sliding control is presented illustrating position control of the lateral comb resonator structure given the availability of positional state information.

  17. Influence of the bonding front propagation on the wafer stack curvature

    SciTech Connect

    Navarro, E.; Bréchet, Y.; Barthelemy, A.; Radu, I.; Pardoen, T.; Raskin, J.-P.

    2014-08-11

    The influence of the dynamics of the direct wafer bonding process on the curvature of the final wafer stack is investigated. An analytical model for the final curvature of the bonded wafers is developed, as a function of the different load components acting during the bonding front propagation, using thin plate theory and considering a strain discontinuity locked at the bonding interface. Experimental profiles are measured for different bonding conditions and wafer thicknesses. A very good agreement with the model prediction is obtained and the influence of the thin air layer trapped in-between the two wafers is demonstrated. The proposed model contributes to further improvement of the bonding process, in particular, for the stacking of layers of electronic devices, which requires a high accuracy of wafer-to-wafer alignment and a very low distortion level.

  18. Dynamics of the public concern and risk communication program implementation.

    PubMed

    Zaryabova, Victoria; Israel, Michel

    2015-09-01

    The public concern about electromagnetic field (EMF) exposure varies due to different reasons. A part of them are connected with the better and higher quality of information that people receive from science, media, Internet, social networks, industry, but others are based on good communication programs performed by the responsible institutions, administration and persons. Especially, in Bulgaria, public concern follows interesting changes, some of them in correlation with the European processes of concern, but others following the economic and political processes in the country. Here, we analyze the dynamics of the public concern over the last 10 years. Our explanation of the decrease of the people's complaints against EMF exposure from base stations for mobile communication is as a result of our risk communication program that is in implementation for >10 years. PMID:26444205

  19. Granular Flow and Dynamics of Lunar Simulants in Excavating Implements

    NASA Technical Reports Server (NTRS)

    Agui, Juan H.; Wilkinson, R. Allen

    2010-01-01

    The exploration of the lunar surface will rely on properly designed excavation equipment for surface preparations and for collection of lunar regolith in In-Situ Resource Utilization (ISRU) processes. Performance efficiency, i.e minimizing loading forces while maximizing material collection, and mass and volume reductions are major design goals. The NASA Glenn Research Center has embarked on an experimental program to determine the flow characteristics and dynamic forces produced by excavation operations using various excavator bucket designs. A new large scale soil bin facility, 2.27 m x 5.94 m x 0.76 m (nominally 8 ft. x 20 ft. x 27 in.) in size, capable of accommodating moderately large test implements was used for the simulations of lunar operations. The soil bin is filled with GRC-3simulant (a mixture of industrial sands and silt with a particle size distribution and the bulk mechanical (shear) strength representative of an average of lunar regolith from different regions) and uses motorized horizontal rails and a vertical actuator to drive the implement through the lunar simulant soil. A six-axis load cell and encoders provide well resolved measurements of the three dimensional forces and torques and motion of the bucket. In addition, simultaneous video allows for the analysis of the flow behavior and structure formation of the regolith during excavation. The data may be useful in anchoring soil mechanic models and to provide engineering data for design consideration.

  20. Highly parallel implementation of non-adiabatic Ehrenfest molecular dynamics

    NASA Astrophysics Data System (ADS)

    Kanai, Yosuke; Schleife, Andre; Draeger, Erik; Anisimov, Victor; Correa, Alfredo

    2014-03-01

    While the adiabatic Born-Oppenheimer approximation tremendously lowers computational effort, many questions in modern physics, chemistry, and materials science require an explicit description of coupled non-adiabatic electron-ion dynamics. Electronic stopping, i.e. the energy transfer of a fast projectile atom to the electronic system of the target material, is a notorious example. We recently implemented real-time time-dependent density functional theory based on the plane-wave pseudopotential formalism in the Qbox/qb@ll codes. We demonstrate that explicit integration using a fourth-order Runge-Kutta scheme is very suitable for modern highly parallelized supercomputers. Applying the new implementation to systems with hundreds of atoms and thousands of electrons, we achieved excellent performance and scalability on a large number of nodes both on the BlueGene based ``Sequoia'' system at LLNL as well as the Cray architecture of ``Blue Waters'' at NCSA. As an example, we discuss our work on computing the electronic stopping power of aluminum and gold for hydrogen projectiles, showing an excellent agreement with experiment. These first-principles calculations allow us to gain important insight into the the fundamental physics of electronic stopping.

  1. Laser wafering for silicon solar.

    SciTech Connect

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  2. Wafer handling and placement tool

    DOEpatents

    Witherspoon, Linda L.

    1988-01-05

    A spring arm tool is provided for clamp engaging and supporting wafers while the tool is hand held. The tool includes a pair of relatively swingable jaw element supporting support arms and the jaw elements are notched to enjoy multiple point contact with a wafer peripheral portion. Also, one disclosed form of the tool includes remotely operable workpiece ejecting structure carried by the jaw elements thereof.

  3. Wafer Replacement Cluster Tool (Presentation);

    SciTech Connect

    Branz, H. M.

    2008-04-01

    This presentation on wafer replacement cluster tool discusses: (1) Platform for advanced R and D toward SAI 2015 cost goal--crystal silicon PV at area costs closer to amorphous Si PV, it's 15% efficiency, inexpensive substrate, and moderate temperature processing (<800 C); (2) Why silicon?--industrial and knowledge base, abundant and environmentally benign, market acceptance, and good efficiency; and (3) Why replace wafers?--expensive, high embedded energy content, and uses 50-100 times more silicon than needed.

  4. Design and implementation of high dynamic GNSS digital receiver

    NASA Astrophysics Data System (ADS)

    Li, Hanmei; Geng, Shengqun; Wang, Ce; Xu, Yong; Zhang, Qishan

    2007-11-01

    The paper presents a scheme of high dynamic GNSS digital receiver using FPGA xc4vsx55 of XILINX and DSP TMS320VC6701 of TI as core controller. Besides brief introduction of scheme design and hardware structure, the paper comprehensively introduces design and implementation of algorithms of fast acquisition and tracking of spread spectrum signal in high dynamic environment. Through optimized design, fast acquisition and tracking of both C code (coarse ranging code) and P code (precision ranging code) are realized in one chip of FPGA, under the control of DSP. Employing FFT-based fast acquisition algorithm, acquisition unit realizes the fast acquisition by duplicated using two FFT/IFFT units with time-sharing fashion, and other optimized FFT calculation structures. Carrier tracking loop is realized by adopting FLL+PLL method which using FLL tracking carrier Doppler shift with greater bandwidth making loop closed rapidly and using PLL precisely tracking carrier phase so as to achieve perfect tracking effects. PN code tracking loop is realized by using multiple non-coherent DLLs with various correlation spacing, which satisfying the requirements of larger tracking range as well as higher tracking precision by using broad spacing accomplishing initial tracking and narrow spacing realizing high precision tracking.

  5. Note: Near infrared interferometric silicon wafer metrology

    NASA Astrophysics Data System (ADS)

    Choi, M. S.; Park, H. M.; Joo, K. N.

    2016-04-01

    In this investigation, two near infrared (NIR) interferometric techniques for silicon wafer metrology are described and verified with experimental results. Based on the transparent characteristic of NIR light to a silicon wafer, the fiber based spectrally resolved interferometry can measure the optical thickness of the wafer and stitching low coherence scanning interferometry can reconstruct entire surfaces of the wafer.

  6. Strategy optimization for mask rule check in wafer fab

    NASA Astrophysics Data System (ADS)

    Yang, Chuen Huei; Lin, Shaina; Lin, Roger; Wang, Alice; Lee, Rachel; Deng, Erwin

    2015-07-01

    Photolithography process is getting more and more sophisticated for wafer production following Moore's law. Therefore, for wafer fab, consolidated and close cooperation with mask house is a key to achieve silicon wafer success. However, generally speaking, it is not easy to preserve such partnership because many engineering efforts and frequent communication are indispensable. The inattentive connection is obvious in mask rule check (MRC). Mask houses will do their own MRC at job deck stage, but the checking is only for identification of mask process limitation including writing, etching, inspection, metrology, etc. No further checking in terms of wafer process concerned mask data errors will be implemented after data files of whole mask are composed in mask house. There are still many potential data errors even post-OPC verification has been done for main circuits. What mentioned here are the kinds of errors which will only occur as main circuits combined with frame and dummy patterns to form whole reticle. Therefore, strategy optimization is on-going in UMC to evaluate MRC especially for wafer fab concerned errors. The prerequisite is that no impact on mask delivery cycle time even adding this extra checking. A full-mask checking based on job deck in gds or oasis format is necessary in order to secure acceptable run time. Form of the summarized error report generated by this checking is also crucial because user friendly interface will shorten engineers' judgment time to release mask for writing. This paper will survey the key factors of MRC in wafer fab.

  7. Automated reticle inspection data analysis for wafer fabs

    NASA Astrophysics Data System (ADS)

    Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

    2009-04-01

    To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity Defect(R) data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

  8. Automated reticle inspection data analysis for wafer fabs

    NASA Astrophysics Data System (ADS)

    Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

    2008-10-01

    To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefecTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

  9. Automated reticle inspection data analysis for wafer fabs

    NASA Astrophysics Data System (ADS)

    Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

    2009-03-01

    To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefectTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

  10. Improving on-wafer CD correlation analysis using advanced diagnostics and across-wafer light-source monitoring

    NASA Astrophysics Data System (ADS)

    Alagna, Paolo; Zurita, Omar; Rechtsteiner, Gregory; Lalovic, Ivan; Bekaert, Joost

    2014-04-01

    With the implementation of multi-patterning ArF-immersion for sub 20nm integrated circuits (IC), advances in equipment monitoring and control are needed to support on-wafer yield performance. These in-situ equipment monitoring improvements, along with advanced litho-cell corrections based on on-wafer measurements, enable meeting stringent overlay and CD control requirements for advanced lithography patterning. The importance of light-source performance on lithography pattering (CD and overlay) has been discussed in previous publications.[1-3] Recent developments of Cymer ArF light-source metrology and on-board monitoring enable end-users to detect, for each exposed wafer, changes in the near-field and far-field spatial profiles and polarization performance, [4-6] in addition to the key `optical' scalar parameters, such as bandwidth, wavelength and energy. The major advantage of this capability is that the key performance metrics are sampled at rates matched to wafer performance, e.g. every exposure field across the wafer, which is critical for direct correlation with on-wafer performance for process control and excursion detection.

  11. Implementation of Green's function molecular dynamics: An extension to LAMMPS

    NASA Astrophysics Data System (ADS)

    Kong, Ling Ti; Bartels, Guido; Campañá, Carlos; Denniston, Colin; Müser, Martin H.

    2009-06-01

    The Green's function molecular dynamics method, which enables one to study the elastic response of a three-dimensional solid to an external stress field by taking into consideration only the surface atoms, was implemented as an extension to an open source classical molecular dynamics simulation code LAMMPS. This was done in the style of fixes. The first fix, FixGFC, measures the elastic stiffness coefficients for a (small) solid block of a given material by making use of the fluctuation-dissipation theorem. With the help of the second fix, FixGFMD, the coefficients obtained from FixGFC can then be used to compute the elastic forces for a (large) block of the same material. Both fixes are designed to be run in parallel and to exploit the functions provided by LAMMPS. Program summaryProgram title: FixGFC/FixGFMD Catalogue identifier: AECW_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AECW_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: yes No. of lines in distributed program, including test data, etc.: 33 469 No. of bytes in distributed program, including test data, etc.: 1 383 631 Distribution format: tar.gz Programming language: C++ Computer: All Operating system: Linux Has the code been vectorized or parallelized?: Parallelized via MPI RAM: Depends on the problem Classification: 7.7 External routines: MPI, FFTW 2.1.5 ( http://www.fftw.org/), LAMMPS version May 21, 2008 ( http://lammps.sandia.gov/) Nature of problem: Using molecular dynamics to study elastically deforming solids imposes very high computational costs because portions of the solid far away from the interface or contact points need to be included in the simulation to reproduce the effects of long-range elastic deformations. Green's function molecular dynamics (GFMD) incorporates the full elastic response of semi-infinite solids so that only surface atoms have to be considered in molecular dynamics simulations, thus

  12. Wafer sampling by regression for systematic wafer variation detection

    NASA Astrophysics Data System (ADS)

    Moon, Byungsool; McNames, James; Whitefield, Bruce; Rudolph, Paul; Zola, Jeff

    2005-05-01

    In-line measurements are used to monitor semiconductor manufacturing processes for excessive variation using statistical process control (SPC) chart techniques. Systematic spatial wafer variation often occurs in a recognizable pattern across the wafer that is characteristic of a particular manufacturing step. Visualization tools are used to associate these patterns with specific manufacturing steps preceding the measurement. Acquiring the measurements is an expensive and slow process. The number of sites measured on a wafer must be minimized while still providing sufficient data to monitor the process. We address two key challenges to effective wafer-level monitoring. The first challenge is to select a small sample of inspection sites that maximize detection sensitivity to the patterns of interest, while minimizing the confounding effects of other types of wafer variation. The second challenge is to develop a detection algorithm that maximizes sensitivity to the patterns of interest without exceeding a user-specified false positive rate. We propose new sampling and detection methods. Both methods are based on a linear regression model with distinct and orthogonal components. The model is flexible enough to include many types of systematic spatial variation across the wafer. Because the components are orthogonal, the degree of each type of variation can be estimated and detected independently with very few samples. A formal hypothesis test can then be used to determine whether specific patterns are present. This approach enables one to determine the sensitivity of a sample plan to patterns of interest and the minimum number of measurements necessary to adequately monitor the process.

  13. A practical approach to LWIR wafer-level optics for thermal imaging systems

    NASA Astrophysics Data System (ADS)

    Symmons, Alan; Pini, Ray

    2013-06-01

    The development and implementation of wafer level packaging for commercial microbolometers has opened the pathway towards full wafer-based thermal imaging systems. The next challenge in development is moving from discrete element LWIR imaging systems to a wafer based optical system, similar to lens assemblies found in cell phone cameras. This paper will compare a typical high volume thermal imaging design manufactured from discrete lens elements to a similar design optimized for manufacture through a wafer based approach. We will explore both performance and cost tradeoffs as well as review the manufacturability of all designs.

  14. Performance of a 10 Gbps FSO System Implementing Novel Beam Tracking a Dynamic Buffering Modem

    NASA Technical Reports Server (NTRS)

    Kiriazes, John; Valencia, J. Emilio; Peach, Robert; Visone, Chris; Burdge, Geoffrey; Vickers, John; Leclerc, Troy; Sauer, Paul; Andrews, Larry; Phillips, Ron

    2012-01-01

    A 10 Gbps Free space optical (FSO) system implements beam tracking, a high dynamic range optical receiver, and a dynamic buffering packet modem. Performance was characterized at the 4.5 km Shuttle Landing Facility at Kennedy Space Center Florida.

  15. Heating device for semiconductor wafers

    DOEpatents

    Vosen, Steven R.

    1999-01-01

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

  16. Heating device for semiconductor wafers

    DOEpatents

    Vosen, S.R.

    1999-07-27

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

  17. Allowable silicon wafer thickness versus diameter for ingot rotation ID wafering

    NASA Technical Reports Server (NTRS)

    Chen, C. P.; Leipold, M. H.

    1982-01-01

    Inner diameter (ID) wafering of ingot rotation reduce the ID saw blade diameter was investigated. The blade thickness can be reduced, resulting in minimal kerf loss. However, significant breakage of wafers occurs during the rotation wafering as the wafer thickness decreases. Fracture mechanics was used to develop an equation relating wafer thickness, diameter and fracture behavior at the point of fracture by using a model of a wafer, supported by a center column and subjected to a cantilever force. It is indicated that the minimum allowable wafer thickness does not increase appreciably with increasing wafer diameter and that fracture through the thickness rather than through the center supporting column limits the minimum allowable wafer thickness. It is suggested that the minimum allowable wafer thickness can be reduced by using a vacuum chuck on the wafer surface to enhance cleavage fracture of the center core and by using 111 ingots.

  18. Relative unitary implementability of perturbed quantum field dynamics on de-Sitter space

    NASA Astrophysics Data System (ADS)

    Poon, Gary K.

    In this article, we study the quantum dynamics of a Klein-Gordon field on de-Sitter space. We prove time evolution is not unitarily implementable. We also consider a Klein-Gordon field perturbed by a local potential V. In this case we prove that the deviation from the V = 0 dynamics is unitarily implementable.

  19. Determination of wafer center position during the transfer process by using the beam-breaking method

    NASA Astrophysics Data System (ADS)

    Chen, Yi-Cheng; Wang, Zhi-Gen; Huang, Bo-Kai

    2014-09-01

    A wafer on a robot blade may slip due to inertia sliding during the acceleration or deceleration process. This study presents the implementation and experimental verification of a novel real-time wafer positioning system to be used during the transfer process. A system-integration computer program involving a human-machine interface (HMI) was also developed, exhibiting the following functions: (a) moving direction judgment; (b) notch-passing judgment; (c) indicating the sensor by which the notch passes; and (d) computing the wafer center in real time. The position of the wafer center is calculated based on the time-sequence of the beam-breaking signals from two optical sensors, and the geometric relations among the sensing points of the robot blade and wafer. When using eight-inch wafers, the experimental results indicated the capabilities of the proposed positioning system under various conditions, including distinct parameters regarding the moving direction, wafer displacement and notch-passing sensors. The accuracy and precision (repeatability) of the measurement in various conditions were calculated and discussed. Furthermore, the experimental results demonstrate that, after combining the novel wafer positioning system and HMI program, the proposed method can be used to compute the position of the wafer center in real time in various conditions.

  20. Wafering economies for industrialization from a wafer manufacturer's viewpoint

    NASA Astrophysics Data System (ADS)

    Rosenfield, T. P.; Fuerst, F. P.

    1982-02-01

    The key technical limitations which inhibit the lowering of value-added costs for state-of-the-art wafering techniques are assessed. From the best experimental results to date, a projection was made to identify those parts of each system which need to be developed in order to meet or improve upon the value-added cost reduction necessary for $0.70/Wp photovoltaics modules.

  1. Wafering economies for industrialization from a wafer manufacturer's viewpoint

    NASA Technical Reports Server (NTRS)

    Rosenfield, T. P.; Fuerst, F. P.

    1982-01-01

    The key technical limitations which inhibit the lowering of value-added costs for state-of-the-art wafering techniques are assessed. From the best experimental results to date, a projection was made to identify those parts of each system which need to be developed in order to meet or improve upon the value-added cost reduction necessary for $0.70/Wp photovoltaics modules.

  2. Temperature Dependent Electrical Properties of PZT Wafer

    NASA Astrophysics Data System (ADS)

    Basu, T.; Sen, S.; Seal, A.; Sen, A.

    2016-04-01

    The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.

  3. Support apparatus for semiconductor wafer processing

    DOEpatents

    Griffiths, Stewart K.; Nilson, Robert H.; Torres, Kenneth J.

    2003-06-10

    A support apparatus for minimizing gravitational stress in semiconductor wafers, and particularly silicon wafers, during thermal processing. The support apparatus comprises two concentric circular support structures disposed on a common support fixture. The two concentric circular support structures, located generally at between 10 and 70% and 70 and 100% and preferably at 35 and 82.3% of the semiconductor wafer radius, can be either solid rings or a plurality of spaced support points spaced apart from each other in a substantially uniform manner. Further, the support structures can have segments removed to facilitate wafer loading and unloading. In order to withstand the elevated temperatures encountered during semiconductor wafer processing, the support apparatus, including the concentric circular support structures and support fixture can be fabricated from refractory materials, such as silicon carbide, quartz and graphite. The claimed wafer support apparatus can be readily adapted for use in either batch or single-wafer processors.

  4. An Approach for Dynamic Optimization of Prevention Program Implementation in Stochastic Environments

    NASA Astrophysics Data System (ADS)

    Kang, Yuncheol; Prabhu, Vittal

    The science of preventing youth problems has significantly advanced in developing evidence-based prevention program (EBP) by using randomized clinical trials. Effective EBP can reduce delinquency, aggression, violence, bullying and substance abuse among youth. Unfortunately the outcomes of EBP implemented in natural settings usually tend to be lower than in clinical trials, which has motivated the need to study EBP implementations. In this paper we propose to model EBP implementations in natural settings as stochastic dynamic processes. Specifically, we propose Markov Decision Process (MDP) for modeling and dynamic optimization of such EBP implementations. We illustrate these concepts using simple numerical examples and discuss potential challenges in using such approaches in practice.

  5. Simulational nanoengineering: Molecular dynamics implementation of an atomistic Stirling engine.

    PubMed

    Rapaport, D C

    2009-04-01

    A nanoscale-sized Stirling engine with an atomistic working fluid has been modeled using molecular dynamics simulation. The design includes heat exchangers based on thermostats, pistons attached to a flywheel under load, and a regenerator. Key aspects of the behavior, including the time-dependent flows, are described. The model is shown to be capable of stable operation while producing net work at a moderate level of efficiency. PMID:19518394

  6. Simulational nanoengineering: Molecular dynamics implementation of an atomistic Stirling engine

    NASA Astrophysics Data System (ADS)

    Rapaport, D. C.

    2009-04-01

    A nanoscale-sized Stirling engine with an atomistic working fluid has been modeled using molecular dynamics simulation. The design includes heat exchangers based on thermostats, pistons attached to a flywheel under load, and a regenerator. Key aspects of the behavior, including the time-dependent flows, are described. The model is shown to be capable of stable operation while producing net work at a moderate level of efficiency.

  7. An SSM-Based Approach to Implement a Dynamic Performance Management System

    NASA Astrophysics Data System (ADS)

    da Piedade Francisco, Roberto; Azevedo, Américo

    This paper underlines how the use of Soft Systems Methodology (SSM) for an efficient planning, implementation and monitoring of a dynamic performance management system supported by a conceptual scheme that enables a conscious and prepared implementation, can provide instances of performance of a collaborative network, and also promote alignment among the partners. A systematic way to implement it and a review on two practical applications in Brazilian collaborative networks of SMEs are also presented.

  8. Dynamic Training Elements in a Circuit Theory Course to Implement a Self-Directed Learning Process

    ERIC Educational Resources Information Center

    Krouk, B. I.; Zhuravleva, O. B.

    2009-01-01

    This paper reports on the implementation of a self-directed learning process in a circuit theory course, incorporating dynamic training elements which were designed on the basis of a cybernetic model of cognitive process management. These elements are centrally linked in a dynamic learning frame, created on the monitor screen, which displays the…

  9. Dynamic Visualizations: How Attraction, Motivation and Communication Affect Streaming Video Tutorial Implementation

    ERIC Educational Resources Information Center

    Boger, Claire

    2011-01-01

    The rapid advancement in the capabilities of computer technologies has made it easier to design and deploy dynamic visualizations in web-based learning environments; yet, the implementation of these dynamic visuals has been met with mixed results. While many guidelines exist to assist instructional designers in the design and application of…

  10. Wafer-bonded surface plasmon waveguides

    NASA Astrophysics Data System (ADS)

    Berini, Pierre; Mattiussi, Greg; Lahoud, Nancy; Charbonneau, Robert

    2007-02-01

    Direct wafer bonding and thinning were explored as an approach for constructing long-range surface plasmon waveguides. The structures consist of a thin metal stripe deposited into a shallow trench etched into one of the claddings, to which another cladding of the same material is directly bonded. The approach was developed first using Pyrex wafers in order to assess feasibility and then using lithium niobate wafers. Optical and electro-optical measurements validate the approach.

  11. Stress Voiding During Wafer Processing

    SciTech Connect

    Yost, F.G.

    1999-03-01

    Wafer processing involves several heating cycles to temperatures as high as 400 C. These thermal excursions are known to cause growth of voids that limit reliability of parts cut from the wafer. A model for void growth is constructed that can simulate the effect of these thermal cycles on void growth. The model is solved for typical process steps and the kinetics and extent of void growth are determined for each. It is shown that grain size, void spacing, and conductor line width are very important in determining void and stress behavior. For small grain sizes, stress relaxation can be rapid and can lead to void shrinkage during subsequent heating cycles. The effect of rapid quenching from process temperatures is to suppress void growth but induce large remnant stress in the conductor line. This stress can provide the driving force for void growth during storage even at room temperature. For isothermal processes the model can be solved analytically and estimates of terminal void size a nd lifetime are obtained.

  12. MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

    SciTech Connect

    Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H; Peterson, Tracy C; Shul, Randy J; Ahlers, Catalina; Plut, Thomas A; Patrizi, Gary A

    2013-12-03

    In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

  13. An optimized ultrasound digital beamformer with dynamic focusing implemented on FPGA.

    PubMed

    Almekkawy, Mohamed; Xu, Jingwei; Chirala, Mohan

    2014-01-01

    We present a resource-optimized dynamic digital beamformer for an ultrasound system based on a field-programmable gate array (FPGA). A comprehensive 64-channel receive beamformer with full dynamic focusing is embedded in the Altera Arria V FPGA chip. To improve spatial and contrast resolution, full dynamic beamforming is implemented by a novel method with resource optimization. This was conceived using the implementation of the delay summation through a bulk (coarse) delay and fractional (fine) delay. The sampling frequency is 40 MHz and the beamformer includes a 240 MHz polyphase filter that enhances the temporal resolution of the system while relaxing the Analog-to-Digital converter (ADC) bandwidth requirement. The results indicate that our 64-channel dynamic beamformer architecture is amenable for a low power FPGA-based implementation in a portable ultrasound system. PMID:25570695

  14. LQR Control of Thin Shell Dynamics: Formulation and Numerical Implementation

    NASA Technical Reports Server (NTRS)

    delRosario, R. C. H.; Smith, R. C.

    1997-01-01

    A PDE-based feedback control method for thin cylindrical shells with surface-mounted piezoceramic actuators is presented. Donnell-Mushtari equations modified to incorporate both passive and active piezoceramic patch contributions are used to model the system dynamics. The well-posedness of this model and the associated LQR problem with an unbounded input operator are established through analytic semigroup theory. The model is discretized using a Galerkin expansion with basis functions constructed from Fourier polynomials tensored with cubic splines, and convergence criteria for the associated approximate LQR problem are established. The effectiveness of the method for attenuating the coupled longitudinal, circumferential and transverse shell displacements is illustrated through a set of numerical examples.

  15. Implementing efficient dynamic formal verification methods for MPI programs.

    SciTech Connect

    Vakkalanka, S.; DeLisi, M.; Gopalakrishnan, G.; Kirby, R. M.; Thakur, R.; Gropp, W.; Mathematics and Computer Science; Univ. of Utah; Univ. of Illinois

    2008-01-01

    We examine the problem of formally verifying MPI programs for safety properties through an efficient dynamic (runtime) method in which the processes of a given MPI program are executed under the control of an interleaving scheduler. To ensure full coverage for given input test data, the algorithm must take into consideration MPI's out-of-order completion semantics. The algorithm must also ensure that nondeterministic constructs (e.g., MPI wildcard receive matches) are executed in all possible ways. Our new algorithm rewrites wildcard receives to specific receives, one for each sender that can potentially match with the receive. It then recursively explores each case of the specific receives. The list of potential senders matching a receive is determined through a runtime algorithm that exploits MPI's operation ordering semantics. Our verification tool ISP that incorporates this algorithm efficiently verifies several programs and finds bugs missed by existing informal verification tools.

  16. Analysis of a color space conversion engine implemented using dynamic partial reconfiguration

    NASA Astrophysics Data System (ADS)

    Toukatly, Ryan; Patru, Dorin; Saber, Eli; Peskin, Eric; Roylance, Gene; Larson, Brad

    2013-02-01

    Dynamic Partial Reconfiguration allows parts of a Field Programmable Gate Array to be reconfigured, while the rest of the system continues uninterrupted operation. A Color Space Conversion Engine is a digital image-processing pipeline, which requires frequent reconfiguration of some, but not all of its stages. Therefore, it is a digital signal processing system that presumably can take advantage of dynamic partial reconfiguration. This paper describes the necessary design changes, testing, and performance analysis of a color space conversion engine implemented onto a field programmable gate array using dynamic partial reconfiguration. The analysis provides insight into the operational scenarios in which dynamic partial reconfiguration is advantageous or not.

  17. Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm

    NASA Astrophysics Data System (ADS)

    Onuma, Takeyoshi; Chichibu, Shigefusa F.; Aoyama, Toyomi; Nakajima, Kiyomi; Ahmet, Parhat; Azuhata, Takashi; Chikyow, Toyohiro; Sota, Takayuki; Nagahama, Shin-ichi; Mukai, Takashi

    2003-12-01

    Optical and structural properties of an InGaN double-quantum-well (DQW) laser diode (LD) wafer that lased at 450 nm were investigated to discuss an enormous impact of a polarization-induced electric field on the recombination dynamics in InGaN quantum structures. The quantum-well (QW) structure was shown to have the well thickness as thin as approximately 1 nm and InN molar fraction x of approximately 14%. The gross effective electric field in the QW (FQW) was estimated to be 490 kV/cm from the Franz-Keldysh oscillation (FKO) period in the electroreflectance (ER) spectrum, implying that an internal piezoelectric field (Fpiz) of approximately 1.4 MV/cm was cancelled by the pn junction built-in field (Fbi) and Coulomb screening due to carriers in the DQW. The magnitude of FQW can be further weakened by applying reverse bias (VR) on the junction; the decrease in the photoluminescence (PL) lifetime at low temperature measured under VR was explained to be due to a recovery of electron-hole wavefunction overlap for small VR (|VR|<4 V), and due mainly to the tunneling escape of carriers through the barriers for larger VR. By applying an appropriate VR smaller than 4 V, electron-hole wavefunction overlap, which had been separated vertically along the c-axis due to quantum-confined Stark effect, could be partially recovered, and then the time-resolved PL signals exhibited a less-pronounced stretched exponential decay, giving a scaling parameter (β) of 0.85 and effective in-plane localization depth (E0) of 40-50 meV for the spontaneous emission. These values were closer to those of much homogeneous QWs compared to those reported previously for InGaN QWs having similar InN molar fractions. The use of very thin QWs is considered to bring easier Coulomb screening of FQW and population inversion under high excitation conditions.

  18. Methane production using resin-wafer electrodeionization

    DOEpatents

    Snyder, Seth W; Lin, YuPo; Urgun-Demirtas, Meltem

    2014-03-25

    The present invention provides an efficient method for creating natural gas including the anaerobic digestion of biomass to form biogas, and the electrodeionization of biogas to form natural gas and carbon dioxide using a resin-wafer deionization (RW-EDI) system. The method may be further modified to include a wastewater treatment system and can include a chemical conditioning/dewatering system after the anaerobic digestion system. The RW-EDI system, which includes a cathode and an anode, can either comprise at least one pair of wafers, each a basic and acidic wafer, or at least one wafer comprising of a basic portion and an acidic portion. A final embodiment of the RW-EDI system can include only one basic wafer for creating natural gas.

  19. Modeling human target reaching with an adaptive observer implemented with dynamic neural fields.

    PubMed

    Fard, Farzaneh S; Hollensen, Paul; Heinke, Dietmar; Trappenberg, Thomas P

    2015-12-01

    Humans can point fairly accurately to memorized states when closing their eyes despite slow or even missing sensory feedback. It is also common that the arm dynamics changes during development or from injuries. We propose a biologically motivated implementation of an arm controller that includes an adaptive observer. Our implementation is based on the neural field framework, and we show how a path integration mechanism can be trained from few examples. Our results illustrate successful generalization of path integration with a dynamic neural field by which the robotic arm can move in arbitrary directions and velocities. Also, by adapting the strength of the motor effect the observer implicitly learns to compensate an image acquisition delay in the sensory system. Our dynamic implementation of an observer successfully guides the arm toward the target in the dark, and the model produces movements with a bell-shaped velocity profile, consistent with human behavior data. PMID:26559472

  20. A system dynamics evaluation model: implementation of health information exchange for public health reporting

    PubMed Central

    Merrill, Jacqueline A; Deegan, Michael; Wilson, Rosalind V; Kaushal, Rainu; Fredericks, Kimberly

    2013-01-01

    Objective To evaluate the complex dynamics involved in implementing electronic health information exchange (HIE) for public health reporting at a state health department, and to identify policy implications to inform similar implementations. Materials and methods Qualitative data were collected over 8 months from seven experts at New York State Department of Health who implemented web services and protocols for querying, receipt, and validation of electronic data supplied by regional health information organizations. Extensive project documentation was also collected. During group meetings experts described the implementation process and created reference modes and causal diagrams that the evaluation team used to build a preliminary model. System dynamics modeling techniques were applied iteratively to build causal loop diagrams representing the implementation. The diagrams were validated iteratively by individual experts followed by group review online, and through confirmatory review of documents and artifacts. Results Three casual loop diagrams captured well-recognized system dynamics: Sliding Goals, Project Rework, and Maturity of Resources. The findings were associated with specific policies that address funding, leadership, ensuring expertise, planning for rework, communication, and timeline management. Discussion This evaluation illustrates the value of a qualitative approach to system dynamics modeling. As a tool for strategic thinking on complicated and intense processes, qualitative models can be produced with fewer resources than a full simulation, yet still provide insights that are timely and relevant. Conclusions System dynamics techniques clarified endogenous and exogenous factors at play in a highly complex technology implementation, which may inform other states engaged in implementing HIE supported by federal Health Information Technology for Economic and Clinical Health (HITECH) legislation. PMID:23292910

  1. One-step implementation of a Toffoli gate of separated superconducting qubits via quantum Zeno dynamics

    NASA Astrophysics Data System (ADS)

    Chen, Mei-Feng; Chen, Yong-Fa; Ma, Song-She

    2016-04-01

    Based on the quantum Zeno dynamics, a scheme is presented to implement a Toffoli gate of three separated superconducting qubits (SQs) by one step. Three separated SQs are connected by two resonators. The scheme is insensitive to the resonator decay because the Zeno subspace does not include the state of the resonators being excited. Numerical simulations indicate that the scheme is robust to the fluctuation of the parameters and the Toffoli gate can be implemented with high fidelity.

  2. Parallel implementation of three-dimensional molecular dynamic simulation for laser-cluster interaction

    SciTech Connect

    Holkundkar, Amol R.

    2013-11-15

    The objective of this article is to report the parallel implementation of the 3D molecular dynamic simulation code for laser-cluster interactions. The benchmarking of the code has been done by comparing the simulation results with some of the experiments reported in the literature. Scaling laws for the computational time is established by varying the number of processor cores and number of macroparticles used. The capabilities of the code are highlighted by implementing various diagnostic tools. To study the dynamics of the laser-cluster interactions, the executable version of the code is available from the author.

  3. Molecular Dynamics implementation of BN2D or 'Mercedes Benz' water model

    NASA Astrophysics Data System (ADS)

    Scukins, Arturs; Bardik, Vitaliy; Pavlov, Evgen; Nerukh, Dmitry

    2015-05-01

    Two-dimensional 'Mercedes Benz' (MB) or BN2D water model (Naim, 1971) is implemented in Molecular Dynamics. It is known that the MB model can capture abnormal properties of real water (high heat capacity, minima of pressure and isothermal compressibility, negative thermal expansion coefficient) (Silverstein et al., 1998). In this work formulas for calculating the thermodynamic, structural and dynamic properties in microcanonical (NVE) and isothermal-isobaric (NPT) ensembles for the model from Molecular Dynamics simulation are derived and verified against known Monte Carlo results. The convergence of the thermodynamic properties and the system's numerical stability are investigated. The results qualitatively reproduce the peculiarities of real water making the model a visually convenient tool that also requires less computational resources, thus allowing simulations of large (hydrodynamic scale) molecular systems. We provide the open source code written in C/C++ for the BN2D water model implementation using Molecular Dynamics.

  4. Automated Array Assembly Task In-depth Study of Silicon Wafer Surface Texturizing

    NASA Technical Reports Server (NTRS)

    Jones, G. T.; Rhee, S. S.

    1979-01-01

    Several aspects of silicon wafer surface texturizing were studied. A low cost cleaning method that utilizes recycled Freon in an ultrasonic vapor degreaser to remove organic and inorganic contaminants from the surface of silicon wafers as received from silicon suppliers was investigated. The use of clean dry air and high throughout wafer batch drying techniques was shown to lower the cost of wafer drying. A two stage texturizing process was examined for suitability in large scale production. Also, an in-depth gettering study with the two stage texturizing process was performed for the enhancement of solar cell efficiency, minimization of current versus voltage curve dispersion, and improvement in process reproducibility. The 10% efficiency improvement goal was exceeded for the near term implementation of flat plate photovoltaic cost reduction.

  5. Diffusion length and resistivity distribution characteristics of silicon wafer by photoluminescence

    SciTech Connect

    Baek, Dohyun; Lee, Jaehyeong; Choi, Byoungdeog

    2014-10-15

    Highlights: • Analytical photoluminescence efficiency calculation and PL intensity ratio method are developed. • Wafer resistivity and diffusion length characteristics are investigated by PL intensity ratio. • PL intensity is well correlated with resistivity, diffusion length or defect density on wafer measurement. - Abstract: Photoluminescence is a convenient, contactless method to characterize semiconductors. Its use for room-temperature silicon characterization has only recently been implemented. We have developed the PL efficiency theory as a function of substrate doping densities, bulk trap density, photon flux density, and reflectance and compared it with experimental data initially for bulk Si wafers. New developed PL intensity ratio method is able to predict the silicon wafer properties, such as doping densities, minority carrier diffusion length and bulk trap density.

  6. Development of megasonic cleaning for silicon wafers

    NASA Technical Reports Server (NTRS)

    Mayer, A.

    1980-01-01

    A cleaning and drying system for processing at least 2500 three in. diameter wafers per hour was developed with a reduction in process cost. The system consists of an ammonia hydrogen peroxide bath in which both surfaces of 3/32 in. spaced, ion implanted wafers are cleaned in quartz carriers moved on a belt past two pairs of megasonic transducers. The wafers are dried in the novel room temperature, high velocity air dryer in the same carriers used for annealing. A new laser scanner was used effectively to monitor the cleaning ability on a sampling basis.

  7. Three wafer stacking for 3D integration.

    SciTech Connect

    Greth, K. Douglas; Ford, Christine L.; Lantz, Jeffrey W.; Shinde, Subhash L.; Timon, Robert P.; Bauer, Todd M.; Hetherington, Dale Laird; Sanchez, Carlos Anthony

    2011-11-01

    Vertical wafer stacking will enable a wide variety of new system architectures by enabling the integration of dissimilar technologies in one small form factor package. With this LDRD, we explored the combination of processes and integration techniques required to achieve stacking of three or more layers. The specific topics that we investigated include design and layout of a reticle set for use as a process development vehicle, through silicon via formation, bonding media, wafer thinning, dielectric deposition for via isolation on the wafer backside, and pad formation.

  8. Implementation of Abstract Data Types in Dynamic Sketches for Learning Geometry

    ERIC Educational Resources Information Center

    Jasute, Egle; Dagiene, Valentina

    2014-01-01

    A long-term observation of students' usage of a dynamic geometry in a classroom at all grade levels has challenged to develop an approach for learning and understanding mathematics in an easier way for both students and teachers. The paper deals with the results of a study that investigates the process and outcomes of the implementation of…

  9. Evolution of Ada technology in the flight dynamics area: Implementation/testing phase analysis

    NASA Technical Reports Server (NTRS)

    Quimby, Kelvin L.; Esker, Linda; Miller, John; Smith, Laurie; Stark, Mike; Mcgarry, Frank

    1989-01-01

    An analysis is presented of the software engineering issues related to the use of Ada for the implementation and system testing phases of four Ada projects developed in the flight dynamics area. These projects reflect an evolving understanding of more effective use of Ada features. In addition, the testing methodology used on these projects has changed substantially from that used on previous FORTRAN projects.

  10. Enhanced capture rate for haze defects in production wafer inspection

    NASA Astrophysics Data System (ADS)

    Auerbach, Ditza; Shulman, Adi; Rozentsvige, Moshe

    2010-03-01

    Photomask degradation via haze defect formation is an increasing troublesome yield problem in the semiconductor fab. Wafer inspection is often utilized to detect haze defects due to the fact that it can be a bi-product of process control wafer inspection; furthermore, the detection of the haze on the wafer is effectively enhanced due to the multitude of distinct fields being scanned. In this paper, we demonstrate a novel application for enhancing the wafer inspection tool's sensitivity to haze defects even further. In particular, we present results of bright field wafer inspection using the on several photo layers suffering from haze defects. One way in which the enhanced sensitivity can be achieved in inspection tools is by using a double scan of the wafer: one regular scan with the normal recipe and another high sensitivity scan from which only the repeater defects are extracted (the non-repeater defects consist largely of noise which is difficult to filter). Our solution essentially combines the double scan into a single high sensitivity scan whose processing is carried out along two parallel routes (see Fig. 1). Along one route, potential defects follow the standard recipe thresholds to produce a defect map at the nominal sensitivity. Along the alternate route, potential defects are used to extract only field repeater defects which are identified using an optimal repeater algorithm that eliminates "false repeaters". At the end of the scan, the two defect maps are merged into one with optical scan images available for all the merged defects. It is important to note, that there is no throughput hit; in addition, the repeater sensitivity is increased relative to a double scan, due to a novel runtime algorithm implementation whose memory requirements are minimized, thus enabling to search a much larger number of potential defects for repeaters. We evaluated the new application on photo wafers which consisted of both random and haze defects. The evaluation procedure

  11. Analysis of organic contaminants from silicon wafer and disk surfaces by thermal desorption-GC-MS

    NASA Astrophysics Data System (ADS)

    Camenzind, Mark J.; Ahmed, Latif; Kumar, Anurag

    1999-03-01

    Organic contaminants can affect semiconductor wafer processing including gate oxide integrity, polysilicon growth, deep ultraviolet photoresist line-width, and cleaning & etching steps. Organophosphates are known to counter dope silicon wafers. Organic contaminants in disk drives can cause failures due to stiction or buildup on the heads. Therefore, it is important to identify organic contaminants adsorbed on wafer or disk surfaces and find their sources so they can be either completely eliminated or at least controlled. Dynamic headspace TD-GC-MS (Thermal Desorption-Gas Chromatography-Mass Spectrometry) methods are very sensitive and can be used to identify organic contaminants on disks and wafers, in air, or outgassing from running drives or their individual components.

  12. Grand-Canonical Adaptive Resolution Centroid Molecular Dynamics: Implementation and application

    NASA Astrophysics Data System (ADS)

    Agarwal, Animesh; Delle Site, Luigi

    2016-09-01

    We have implemented the Centroid Molecular Dynamics scheme (CMD) into the Grand Canonical-like version of the Adaptive Resolution Simulation Molecular Dynamics (GC-AdResS) method. We have tested the implementation on two different systems, liquid parahydrogen at extreme thermodynamic conditions and liquid water at ambient conditions; the reproduction of structural as well as dynamical results of reference systems are highly satisfactory. The capability of performing GC-AdResS CMD simulations allows for the treatment of a system characterized by some quantum features and open boundaries. This latter characteristic not only is of computational convenience, allowing for equivalent results of much larger and computationally more expensive systems, but also suggests a tool of analysis so far not explored, that is the unambiguous identification of the essential degrees of freedom required for a given property.

  13. Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy

    NASA Astrophysics Data System (ADS)

    Altan, Hakan

    All optical, THz-Time Domain Spectroscopic (THz-TDS) methods were employed towards determining the electrical characteristics of Single Walled Carbon Nanotubes, Ion Implanted Si nanoclusters and Si1-xGe x, HFO2, SiO2 on p-type Si wafers. For the nanoscale composite materials, Visible Pump/THz Probe spectroscopy measurements were performed after observing that the samples were not sensitive to the THz radiation alone. The results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photo-induced localized states from 0.2 to 0.7THz. The THz transmission is modeled through the photoexcited layer with an effective dielectric constant described by a Drude + Lorentz model and given by Maxwell-Garnett theory. Comparisons are made with other prevalent theories that describe electronic transport. Similar experiments were repeated for ion-implanted, 3-4nm Si nanoclusters in fused silica for which a similar behavior was observed. In addition, a change in reflection from Si1-xGex on Si, 200mm diameter semiconductor heterostructure wafers with 10% or 15% Ge content, was measured using THz-TDS methods. Drude model is utilized for the transmission/reflection measurements and from the reflection data the mobility of each wafer is estimated. Furthermore, the effect of high-kappa dielectric material (HfO2) on the electrical properties of p-type silicon wafers was characterized by utilizing non-contact, differential (pump-pump off) spectroscopic methods to differ between HfO2 and SiO 2 on Si wafers. The measurements are analyzed in two distinct transmission models, where one is an exact representation of the layered structure for each wafer and the other assumed that the response observed from the differential THz transmission was solely due to effects from interfacial traps between the dielectric layer and the substrate. The latter gave a more accurate picture of the carrier dynamics. From these measurements the effect of interfacial defects on

  14. Improvement of process control using wafer geometry for enhanced manufacturability of advanced semiconductor devices

    NASA Astrophysics Data System (ADS)

    Lee, Honggoo; Lee, Jongsu; Kim, Sang Min; Lee, Changhwan; Han, Sangjun; Kim, Myoungsoo; Kwon, Wontaik; Park, Sung-Ki; Vukkadala, Pradeep; Awasthi, Amartya; Kim, J. H.; Veeraraghavan, Sathish; Choi, DongSub; Huang, Kevin; Dighe, Prasanna; Lee, Cheouljung; Byeon, Jungho; Dey, Soham; Sinha, Jaydeep

    2015-03-01

    Aggressive advancements in semiconductor technology have resulted in integrated chip (IC) manufacturing capability at sub-20nm half-pitch nodes. With this, lithography overlay error budgets are becoming increasingly stringent. The delay in EUV lithography readiness for high volume manufacturing (HVM) and the need for multiple-patterning lithography with 193i technology has further amplified the overlay issue. Thus there exists a need for technologies that can improve overlay errors in HVM. The traditional method for reducing overlay errors predominantly focused on improving lithography scanner printability performance. However, processes outside of the lithography sector known as processinduced overlay errors can contribute significantly to the total overlay at the current requirements. Monitoring and characterizing process-induced overlay has become critical for advanced node patterning. Recently a relatively new technique for overlay control that uses high-resolution wafer geometry measurements has gained significance. In this work we present the implementation of this technique in an IC fabrication environment to monitor wafer geometry changes induced across several points in the process flow, of multiple product layers with critical overlay performance requirement. Several production wafer lots were measured and analyzed on a patterned wafer geometry tool. Changes induced in wafer geometry as a result of wafer processing were related to down-stream overlay error contribution using the analytical in-plane distortion (IPD) calculation model. Through this segmentation, process steps that are major contributors to down-stream overlay were identified. Subsequent process optimization was then isolated to those process steps where maximum benefit might be realized. Root-cause for the within-wafer, wafer-to-wafer, tool-to-tool, and station-to-station variations observed were further investigated using local shape curvature changes - which is directly related to

  15. Adhesive wafer bonding for MEMS applications

    NASA Astrophysics Data System (ADS)

    Dragoi, Viorel; Glinsner, Thomas; Mittendorfer, Gerald; Wieder, Bernhard; Lindner, Paul

    2003-04-01

    Low temperature wafer bonding is a powerful technique for MEMS/MOEMS devices fabrication and packaging. Among the low temperature processes adhesive bonding focuses a high technological interest. Adhesive wafer bonding is a bonding approach using an intermediate layer for bonding (e.g. glass, polymers, resists, polyimides). The main advantages of this method are: surface planarization, encapsulation of structures on the wafer surface, particle compensation and decrease of annealing temperature after bonding. This paper presents results on adhesive bonding using spin-on glass and Benzocyclobutene (BCB) from Dow Chemicals. The advantages of using adhesive bonding for MEMS applications will be illustrated be presenting a technology of fabricating GaAs-on-Si substrates (up to 150 mm diameter) and results on BCB bonding of Si wafers (200 mm diameter).

  16. Modelling deformation and fracture in confectionery wafers

    SciTech Connect

    Mohammed, Idris K.; Charalambides, Maria N.; Williams, J. Gordon; Rasburn, John

    2015-01-22

    The aim of this research is to model the deformation and fracture behaviour of brittle wafers often used in chocolate confectionary products. Three point bending and compression experiments were performed on beam and circular disc samples respectively to determine the 'apparent' stress-strain curves in bending and compression. The deformation of the wafer for both these testing types was observed in-situ within an SEM. The wafer is modeled analytically and numerically as a composite material with a core which is more porous than the skins. X-ray tomography was used to generate a three dimensional volume of the wafer microstructure which was then meshed and used for quantitative analysis. A linear elastic material model, with a damage function and element deletion, was used and the XMT generated architecture was loaded in compression. The output from the FE simulations correlates closely to the load-deflection deformation observed experimentally.

  17. Modelling deformation and fracture in confectionery wafers

    NASA Astrophysics Data System (ADS)

    Mohammed, Idris K.; Charalambides, Maria N.; Williams, J. Gordon; Rasburn, John

    2015-01-01

    The aim of this research is to model the deformation and fracture behaviour of brittle wafers often used in chocolate confectionary products. Three point bending and compression experiments were performed on beam and circular disc samples respectively to determine the 'apparent' stress-strain curves in bending and compression. The deformation of the wafer for both these testing types was observed in-situ within an SEM. The wafer is modeled analytically and numerically as a composite material with a core which is more porous than the skins. X-ray tomography was used to generate a three dimensional volume of the wafer microstructure which was then meshed and used for quantitative analysis. A linear elastic material model, with a damage function and element deletion, was used and the XMT generated architecture was loaded in compression. The output from the FE simulations correlates closely to the load-deflection deformation observed experimentally.

  18. Design and implementation of the flight dynamics system for COMS satellite mission operations

    NASA Astrophysics Data System (ADS)

    Lee, Byoung-Sun; Hwang, Yoola; Kim, Hae-Yeon; Kim, Jaehoon

    2011-04-01

    The first Korean multi-mission geostationary Earth orbit satellite, Communications, Ocean, and Meteorological Satellite (COMS) was launched by an Ariane 5 launch vehicle in June 26, 2010. The COMS satellite has three payloads including Ka-band communications, Geostationary Ocean Color Imager, and Meteorological Imager. Although the COMS spacecraft bus is based on the Astrium Eurostar 3000 series, it has only one solar array to the south panel because all of the imaging sensors are located on the north panel. In order to maintain the spacecraft attitude with 5 wheels and 7 thrusters, COMS should perform twice a day wheel off-loading thruster firing operations, which affect on the satellite orbit. COMS flight dynamics system provides the general on-station functions such as orbit determination, orbit prediction, event prediction, station-keeping maneuver planning, station-relocation maneuver planning, and fuel accounting. All orbit related functions in flight dynamics system consider the orbital perturbations due to wheel off-loading operations. There are some specific flight dynamics functions to operate the spacecraft bus such as wheel off-loading management, oscillator updating management, and on-station attitude reacquisition management. In this paper, the design and implementation of the COMS flight dynamics system is presented. An object oriented analysis and design methodology is applied to the flight dynamics system design. Programming language C# within Microsoft .NET framework is used for the implementation of COMS flight dynamics system on Windows based personal computer.

  19. Finite element implementation of a dynamic residual-based LES model

    NASA Astrophysics Data System (ADS)

    Madonna, Nicholas

    We are introduced to a new dynamic model for k, the filtered fine-scale kinetic energy, in the context of the Residual-Based Variational Multiscale method (RBVMS) for Large Eddy Simulation (LES). We transform the strong form of the equation for k into its stabilized finite element form. With this result, we take strides toward implementing this model into PHASTA, an open source code for solving compressible and incompressible flows. Three test cases are conducted to verify the proper implementation of various components of the model. The results of these tests provide evidence to suggest that the current implementation of this new model into PHASTA is correct thus far. We conclude with a number of steps to take in the future to fully implement the model.

  20. Response to Intervention and Dynamic Assessment: Implementing Systematic, Dynamic and Individualised Interventions in Primary School

    ERIC Educational Resources Information Center

    Gustafson, Stefan; Svensson, Idor; Fälth, Linda

    2014-01-01

    In recent years, response to intervention (RTI) has been the focus of research, debate and educational implementations, especially regarding early reading instruction. RTI provides an educational framework characterised by different tiers or layers of instruction, providing increasingly more intense and individualised interventions for children in…

  1. Genesis Ultrapure Water Megasonic Wafer Spin Cleaner

    NASA Technical Reports Server (NTRS)

    Allton, Judith H.; Stansbery, Eileen K.; Calaway, Michael J.; Rodriquez, Melissa C.

    2013-01-01

    A device removes, with high precision, the majority of surface particle contamination greater than 1-micron-diameter in size from ultrapure semiconductor wafer materials containing implanted solar wind samples returned by NASA's Genesis mission. This cleaning device uses a 1.5-liter/minute flowing stream of heated ultrapure water (UPW) with 1- MHz oscillating megasonic pulse energy focused at 3 to 5 mm away from the wafer surface spinning at 1,000 to 10,000 RPM, depending on sample size. The surface particle contamination is removed by three processes: flowing UPW, megasonic cavitations, and centripetal force from the spinning wafer. The device can also dry the wafer fragment after UPW/megasonic cleaning by continuing to spin the wafer in the cleaning chamber, which is purged with flowing ultrapure nitrogen gas at 65 psi (.448 kPa). The cleaner also uses three types of vacuum chucks that can accommodate all Genesis-flown array fragments in any dimensional shape between 3 and 100 mm in diameter. A sample vacuum chuck, and the manufactured UPW/megasonic nozzle holder, replace the human deficiencies by maintaining a consistent distance between the nozzle and wafer surface as well as allowing for longer cleaning time. The 3- to 5-mm critical distance is important for the ability to remove particles by megasonic cavitations. The increased UPW sonication time and exposure to heated UPW improve the removal of 1- to 5-micron-sized particles.

  2. Analyzes Data from Semiconductor Wafers

    Energy Science and Technology Software Center (ESTSC)

    2002-07-23

    This program analyzes reflectance data from semiconductor wafers taken during the deposition or evolution of a thin film, typically via chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). It is used to determine the growth rate and optical constants of the deposited thin films using a virtual interface concept. Growth rates and optical constants of multiple-layer structures is possible by selecting appropriate sections in the reflectance vs time waveform. No prior information or estimatesmore » of growth rates and materials properties is required if an absolute reflectance waveform is used. If the optical constants of a thin film are known, then the growth rate may be extracted from a relative reflectance data set. The analysis is valid for either s or p polarized light at any incidence angle and wavelength. The analysis package is contained within an easy-to-use graphical user interface. The program is based on the algorighm described in the following two publications: W.G. Breiland and K.P. Killen, J. Appl. Phys. 78 (1995) 6726, and W. G. Breiland, H.Q. Hou, B.E. Hammons, and J.F. Klem, Proc. XXVIII SOTAPOCS Symp. Electrochem. Soc. San Diego, May 3-8, 1998. It relies on the fact that any multiple-layer system has a reflectance spectrum that is mathematically equivalent to a single-layer thin film on a virtual substrate. The program fits the thin film reflectance with five adjustable parameters: 1) growth rate, 2) real part of complex refractive index, 3) imaginary part of refractive index, 4) amplitude of virtual interface reflectance, 5) phase of virtual interface reflectance.« less

  3. Implementation of Parallel Dynamic Simulation on Shared-Memory vs. Distributed-Memory Environments

    SciTech Connect

    Jin, Shuangshuang; Chen, Yousu; Wu, Di; Diao, Ruisheng; Huang, Zhenyu

    2015-12-09

    Power system dynamic simulation computes the system response to a sequence of large disturbance, such as sudden changes in generation or load, or a network short circuit followed by protective branch switching operation. It consists of a large set of differential and algebraic equations, which is computational intensive and challenging to solve using single-processor based dynamic simulation solution. High-performance computing (HPC) based parallel computing is a very promising technology to speed up the computation and facilitate the simulation process. This paper presents two different parallel implementations of power grid dynamic simulation using Open Multi-processing (OpenMP) on shared-memory platform, and Message Passing Interface (MPI) on distributed-memory clusters, respectively. The difference of the parallel simulation algorithms and architectures of the two HPC technologies are illustrated, and their performances for running parallel dynamic simulation are compared and demonstrated.

  4. ThermoData Engine (TDE): software implementation of the dynamic data evaluation concept. 3. Binary mixtures.

    PubMed

    Diky, Vladimir; Chirico, Robert D; Kazakov, Andrei F; Muzny, Chris D; Frenkel, Michael

    2009-02-01

    ThermoData Engine (TDE) is the first full-scale software implementation of the dynamic data evaluation concept, as reported recently in this journal. The present paper describes the first application of this concept to the evaluation of thermophysical properties for binary chemical systems. Five activity-coefficient models have been implemented for representation of phase-equilibrium data (vapor-liquid, liquid-liquid, and solid-liquid equilibrium): NRTL, UNIQUAC, Van Laar, Margules/Redlich-Kister, and Wilson. Implementation of these models in TDE is fully described. Properties modeled individually are densities, surface tensions, critical temperatures, critical pressures, excess enthalpies, and the transport properties-viscosity and thermal conductivity. Extensions to the class structure of the program are described with emphasis on special features allowing close linkage between mixture and pure-component properties required for implementation of the models. Details of gas-phase models used in conjunction with the activity-coefficient models are shown. Initial implementation of the dynamic data evaluation concept for reactions is demonstrated with evaluation of enthalpies of formation for compounds containing carbon, hydrogen, oxygen, and nitrogen. Directions for future enhancements are outlined. PMID:19434848

  5. An easy implementation of displacement calculations in 3D discrete dislocation dynamics codes

    NASA Astrophysics Data System (ADS)

    Fivel, Marc; Depres, Christophe

    2014-10-01

    Barnett's coordinate-free expression of the displacement field of a triangular loop in an isotropic media is revisited in a view to be implemented in 3D discrete dislocation dynamics codes. A general meshing procedure solving the problems of non-planar loops is presented. The method is user-friendly and can be used in numerical simulations since it gives the contribution of each dislocation segment to the global displacement field without defining the connectivity of closed loops. Easy to implement in parallel calculations, this method is successfully applied to large-scale simulations.

  6. Multiscale molecular dynamics/hydrodynamics implementation of two dimensional "Mercedes Benz" water model

    NASA Astrophysics Data System (ADS)

    Scukins, A.; Nerukh, D.; Pavlov, E.; Karabasov, S.; Markesteijn, A.

    2015-09-01

    A multiscale Molecular Dynamics/Hydrodynamics implementation of the 2D Mercedes Benz (MB or BN2D) [1] water model is developed and investigated. The concept and the governing equations of multiscale coupling together with the results of the two-way coupling implementation are reported. The sensitivity of the multiscale model for obtaining macroscopic and microscopic parameters of the system, such as macroscopic density and velocity fluctuations, radial distribution and velocity autocorrelation functions of MB particles, is evaluated. Critical issues for extending the current model to large systems are discussed.

  7. Porous solid ion exchange wafer for immobilizing biomolecules

    DOEpatents

    Arora, Michelle B.; Hestekin, Jamie A.; Lin, YuPo J.; St. Martin, Edward J.; Snyder, Seth W.

    2007-12-11

    A porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer. Also disclosed is a porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer containing a biomolecule with a tag. A separate bioreactor is also disclosed incorporating the wafer described above.

  8. Improvement of focus accuracy on processed wafer

    NASA Astrophysics Data System (ADS)

    Higashibata, Satomi; Komine, Nobuhiro; Fukuhara, Kazuya; Koike, Takashi; Kato, Yoshimitsu; Hashimoto, Kohji

    2013-04-01

    As feature size shrinkage in semiconductor device progress, process fluctuation, especially focus strongly affects device performance. Because focus control is an ongoing challenge in optical lithography, various studies have sought for improving focus monitoring and control. Focus errors are due to wafers, exposure tools, reticles, QCs, and so on. Few studies are performed to minimize the measurement errors of auto focus (AF) sensors of exposure tool, especially when processed wafers are exposed. With current focus measurement techniques, the phase shift grating (PSG) focus monitor 1) has been already proposed and its basic principle is that the intensity of the diffraction light of the mask pattern is made asymmetric by arranging a π/2 phase shift area on a reticle. The resist pattern exposed at the defocus position is shifted on the wafer and shifted pattern can be easily measured using an overlay inspection tool. However, it is difficult to measure shifted pattern for the pattern on the processed wafer because of interruptions caused by other patterns in the underlayer. In this paper, we therefore propose "SEM-PSG" technique, where the shift of the PSG resist mark is measured by employing critical dimension-scanning electron microscope (CD-SEM) to measure the focus error on the processed wafer. First, we evaluate the accuracy of SEM-PSG technique. Second, by applying the SEM-PSG technique and feeding the results back to the exposure, we evaluate the focus accuracy on processed wafers. By applying SEM-PSG feedback, the focus accuracy on the processed wafer was improved from 40 to 29 nm in 3σ.

  9. MPI implementation of PHOENICS: A general purpose computational fluid dynamics code

    SciTech Connect

    Simunovic, S.; Zacharia, T.; Baltas, N.; Spalding, D.B.

    1995-04-01

    PHOENICS is a suite of computational analysis programs that are used for simulation of fluid flow, heat transfer, and dynamical reaction processes. The parallel version of the solver EARTH for the Computational Fluid Dynamics (CFD) program PHOENICS has been implemented using Message Passing Interface (MPI) standard. Implementation of MPI version of PHOENICS makes this computational tool portable to a wide range of parallel machines and enables the use of high performance computing for large scale computational simulations. MPI libraries are available on several parallel architectures making the program usable across different architectures as well as on heterogeneous computer networks. The Intel Paragon NX and MPI versions of the program have been developed and tested on massively parallel supercomputers Intel Paragon XP/S 5, XP/S 35, and Kendall Square Research, and on the multiprocessor SGI Onyx computer at Oak Ridge National Laboratory. The preliminary testing results of the developed program have shown scalable performance for reasonably sized computational domains.

  10. MPI implementation of PHOENICS: A general purpose computational fluid dynamics code

    NASA Astrophysics Data System (ADS)

    Simunovic, S.; Zacharia, T.; Baltas, N.; Spalding, D. B.

    1995-03-01

    PHOENICS is a suite of computational analysis programs that are used for simulation of fluid flow, heat transfer, and dynamical reaction processes. The parallel version of the solver EARTH for the Computational Fluid Dynamics (CFD) program PHOENICS has been implemented using Message Passing Interface (MPI) standard. Implementation of MPI version of PHOENICS makes this computational tool portable to a wide range of parallel machines and enables the use of high performance computing for large scale computational simulations. MPI libraries are available on several parallel architectures making the program usable across different architectures as well as on heterogeneous computer networks. The Intel Paragon NX and MPI versions of the program have been developed and tested on massively parallel supercomputers Intel Paragon XP/S 5, XP/S 35, and Kendall Square Research, and on the multiprocessor SGI Onyx computer at Oak Ridge National Laboratory. The preliminary testing results of the developed program have shown scalable performance for reasonably sized computational domains.

  11. Cost-Effective Silicon Wafers for Solar Cells: Direct Wafer Enabling Terawatt Photovoltaics

    SciTech Connect

    2010-01-15

    Broad Funding Opportunity Announcement Project: 1366 is developing a process to reduce the cost of solar electricity by up to 50% by 2020—from $0.15 per kilowatt hour to less than $0.07. 1366’s process avoids the costly step of slicing a large block of silicon crystal into wafers, which turns half the silicon to dust. Instead, the company is producing thin wafers directly from molten silicon at industry-standard sizes, and with efficiencies that compare favorably with today’s state-of-the-art technologies. 1366’s wafers could directly replace wafers currently on the market, so there would be no interruptions to the delivery of these products to market. As a result of 1366’s technology, the cost of silicon wafers could be reduced by 80%.

  12. Implementing molecular dynamics on hybrid high performance computers - Particle-particle particle-mesh

    NASA Astrophysics Data System (ADS)

    Brown, W. Michael; Kohlmeyer, Axel; Plimpton, Steven J.; Tharrington, Arnold N.

    2012-03-01

    The use of accelerators such as graphics processing units (GPUs) has become popular in scientific computing applications due to their low cost, impressive floating-point capabilities, high memory bandwidth, and low electrical power requirements. Hybrid high-performance computers, machines with nodes containing more than one type of floating-point processor (e.g. CPU and GPU), are now becoming more prevalent due to these advantages. In this paper, we present a continuation of previous work implementing algorithms for using accelerators into the LAMMPS molecular dynamics software for distributed memory parallel hybrid machines. In our previous work, we focused on acceleration for short-range models with an approach intended to harness the processing power of both the accelerator and (multi-core) CPUs. To augment the existing implementations, we present an efficient implementation of long-range electrostatic force calculation for molecular dynamics. Specifically, we present an implementation of the particle-particle particle-mesh method based on the work by Harvey and De Fabritiis. We present benchmark results on the Keeneland InfiniBand GPU cluster. We provide a performance comparison of the same kernels compiled with both CUDA and OpenCL. We discuss limitations to parallel efficiency and future directions for improving performance on hybrid or heterogeneous computers.

  13. Implementing Molecular Dynamics on Hybrid High Performance Computers - Particle-Particle Particle-Mesh

    SciTech Connect

    Brown, W Michael; Kohlmeyer, Axel; Plimpton, Steven J; Tharrington, Arnold N

    2012-01-01

    The use of accelerators such as graphics processing units (GPUs) has become popular in scientific computing applications due to their low cost, impressive floating-point capabilities, high memory bandwidth, and low electrical power requirements. Hybrid high-performance computers, machines with nodes containing more than one type of floating-point processor (e.g. CPU and GPU), are now becoming more prevalent due to these advantages. In this paper, we present a continuation of previous work implementing algorithms for using accelerators into the LAMMPS molecular dynamics software for distributed memory parallel hybrid machines. In our previous work, we focused on acceleration for short-range models with an approach intended to harness the processing power of both the accelerator and (multi-core) CPUs. To augment the existing implementations, we present an efficient implementation of long-range electrostatic force calculation for molecular dynamics. Specifically, we present an implementation of the particle-particle particle-mesh method based on the work by Harvey and De Fabritiis. We present benchmark results on the Keeneland InfiniBand GPU cluster. We provide a performance comparison of the same kernels compiled with both CUDA and OpenCL. We discuss limitations to parallel efficiency and future directions for improving performance on hybrid or heterogeneous computers.

  14. Silicon Wafer-Scale Substrate for Microshutters and Detector Arrays

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzy; Franz, David E.; Ewin, Audrey J.; Jhabvala, Christine; Babu, Sachi; Snodgrass, Stephen; Costen, Nicholas; Zincke, Christian

    2009-01-01

    The silicon substrate carrier was created so that a large-area array (in this case 62,000+ elements of a microshutter array) and a variety of discrete passive and active devices could be mounted on a single board, similar to a printed circuit board. However, the density and number of interconnects far exceeds the capabilities of printed circuit board technology. To overcome this hurdle, a method was developed to fabricate this carrier out of silicon and implement silicon integrated circuit (IC) technology. This method achieves a large number of high-density metal interconnects; a 100-percent yield over a 6-in. (approximately equal to 15-cm) diameter wafer (one unit per wafer); a rigid, thermally compatible structure (all components and operating conditions) to cryogenic temperatures; re-workability and component replaceability, if required; and the ability to precisely cut large-area holes through the substrate. A method that would employ indium bump technology along with wafer-scale integration onto a silicon carrier was also developed. By establishing a silicon-based version of a printed circuit board, the objectives could be met with one solution. The silicon substrate would be 2 mm thick to survive the environmental loads of a launch. More than 2,300 metal traces and over 1,500 individual wire bonds are required. To mate the microshutter array to the silicon substrate, more than 10,000 indium bumps are required. A window was cut in the substrate to allow the light signal to pass through the substrate and reach the microshutter array. The substrate was also the receptacle for multiple unpackaged IC die wire-bonded directly to the substrate (thus conserving space over conventionally packaged die). Unique features of this technology include the implementation of a 2-mmthick silicon wafer to withstand extreme mechanical loads (from a rocket launch); integrated polysilicon resistor heaters directly on the substrate; the precise formation of an open aperture

  15. Wafer-fused semiconductor radiation detector

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  16. Wafer plane inspection evaluated for photomask production

    NASA Astrophysics Data System (ADS)

    Gallagher, Emily; Badger, Karen; Lawliss, Mark; Kodera, Yutaka; Azpiroz, Jaione Tirapu; Pang, Song; Zhang, Hongqin; Eugenieva, Eugenia; Clifford, Chris; Goonesekera, Arosha; Tian, Yibin

    2008-10-01

    Wafer Plane Inspection (WPI) is a novel approach to inspection, developed to enable high inspectability on fragmented mask features at the optimal defect sensitivity. It builds on well-established high resolution inspection capabilities to complement existing manufacturing methods. The production of defect-free photomasks is practical today only because of informed decisions on the impact of defects identified. The defect size, location and its measured printing impact can dictate that a mask is perfectly good for lithographic purposes. This inspection - verification - repair loop is timeconsuming and is predicated on the fact that detectable photomask defects do not always resolve or matter on wafer. This paper will introduce and evaluate an alternative approach that moves the mask inspection to the wafer plane. WPI uses a high NA inspection of the mask to construct a physical mask model. This mask model is used to create the mask image in the wafer plane. Finally, a threshold model is applied to enhance sensitivity to printing defects. WPI essentially eliminates the non-printing inspection stops and relaxes some of the pattern restrictions currently placed on incoming photomask designs. This paper outlines the WPI technology and explores its application to patterns and substrates representative of 32nm designs. The implications of deploying Wafer Plane Inspection will be discussed.

  17. Environmentally benign processing of YAG transparent wafers

    NASA Astrophysics Data System (ADS)

    Yang, Yan; Wu, Yiquan

    2015-12-01

    Transparent yttrium aluminum garnet (YAG) wafers were successfully produced via aqueous tape casting and vacuum sintering techniques using a new environmentally friendly binder, a copolymer of isobutylene and maleic anhydride with the commercial name ISOBAM (noted as ISOBAM). Aqueous YAG slurries were mixed by ball-milling, which was followed by de-gassing and tape casting of wafers. The final YAG green tapes were homogenous and flexible, and could be bent freely without cracking. After the drying and sintering processes, transparent YAG wafers were achieved. The microstructures of both the green tape and vacuum-sintered YAG ceramic were observed by scanning electronic microscopy (SEM). Phase compositions were examined by X-ray diffraction (XRD). Optical transmittance was measured in UV-VIS regions with the result that the transmittance is 82.6% at a wavelength of 800 nm.

  18. Video-rate fuzzy Golay processor for wafer scale integration

    SciTech Connect

    Steinvorth, R.H.

    1987-01-01

    The fuzzy Golay transformation is a novel approach for gray-level image processing. Fuzzy-set theory is used to modify the binary image processing techniques developed by M. J. Golay to permit direct gray-level image processing without thresholding. The comparison between gray-level pixels is accomplished with the Pixel Closeness Value (PCV) while comparison between gray-level neighborhoods uses the Neighborhood Closeness Value (NCV). Feature extraction is done by comparing the gray-level image neighborhood to a subset of the fourteen Golay neighborhoods using the NCV function. The Fuzzy Golay Processor (FGP) is an architecture designed to implement the fuzzy Golay transformation. The design of the FGP has been optimized to permit a successful implementation in Wafer Scale Integration (WSI). A system containing four FGPs is capable of performing thirty fuzzy Golay transformations per second on a 256 by 256 eight-bit pixel image. Such a system could fit on a four-inch wafer with enough redundant dies to allow a 30% die yield. The required dies are four Input-Output Modules (IOM) and 56 Neighborhood Evaluation Modules (NEM).

  19. Making Porous Luminescent Regions In Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W.; Jones, Eric W.

    1994-01-01

    Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

  20. Laser furnace and method for zone refining of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Griner, Donald B. (Inventor); zur Burg, Frederick W. (Inventor); Penn, Wayne M. (Inventor)

    1988-01-01

    A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).

  1. Design and implementation of a fault-tolerant and dynamic metadata database for clinical trials

    NASA Astrophysics Data System (ADS)

    Lee, J.; Zhou, Z.; Talini, E.; Documet, J.; Liu, B.

    2007-03-01

    In recent imaging-based clinical trials, quantitative image analysis (QIA) and computer-aided diagnosis (CAD) methods are increasing in productivity due to higher resolution imaging capabilities. A radiology core doing clinical trials have been analyzing more treatment methods and there is a growing quantity of metadata that need to be stored and managed. These radiology centers are also collaborating with many off-site imaging field sites and need a way to communicate metadata between one another in a secure infrastructure. Our solution is to implement a data storage grid with a fault-tolerant and dynamic metadata database design to unify metadata from different clinical trial experiments and field sites. Although metadata from images follow the DICOM standard, clinical trials also produce metadata specific to regions-of-interest and quantitative image analysis. We have implemented a data access and integration (DAI) server layer where multiple field sites can access multiple metadata databases in the data grid through a single web-based grid service. The centralization of metadata database management simplifies the task of adding new databases into the grid and also decreases the risk of configuration errors seen in peer-to-peer grids. In this paper, we address the design and implementation of a data grid metadata storage that has fault-tolerance and dynamic integration for imaging-based clinical trials.

  2. A multiply parallel implementation of finite element-based discrete dislocation dynamics for arbitrary geometries

    NASA Astrophysics Data System (ADS)

    Crone, Joshua C.; Chung, Peter W.; Leiter, Kenneth W.; Knap, Jaroslaw; Aubry, Sylvie; Hommes, Gregg; Arsenlis, Athanasios

    2014-04-01

    Discrete dislocation dynamics (DD) approaches have proven useful in modeling the dynamics of large ensembles of dislocations. Continuing interest in finite body effects via image stresses has extended DD numerical approaches to improve the handling of surfaces. However, a physically accurate, yet computationally scalable, implementation has been elusive. This paper presents a new framework and implementation of a finite element-based discrete DD code that (1) treats arbitrarily shaped non-convex surfaces through image tractions, (2) allows for systematic refinement of the finite element mesh both in the bulk and on the surface and (3) provides a platform to scale to relatively larger and lengthier simulations. The approach is based on the capabilities of the Parallel Dislocation Simulator coupled through a distributed shared memory implementation for the calculation of large numbers of dislocation segments interacting with an independently large number of surface finite elements. Surface tracking approaches enable topological features at surfaces to be modeled. We verify the computed results via comparisons with analytical solutions for an infinite screw dislocation and prismatic loop near a surface and examine surface effects on a Frank-Read source. Convergence of the image force error with h- and p-refinement is shown to indicate the computational robustness. Additionally, through larger numerical experiments, we demonstrate the new capabilities in a three-dimensional elastic body of finite extent.

  3. A canonical replica exchange molecular dynamics implementation with normal pressure in each replica

    NASA Astrophysics Data System (ADS)

    Peter, Emanuel K.; Pivkin, Igor V.; Shea, Joan-Emma

    2016-07-01

    In this paper, we present a new canonical replica exchange molecular dynamics (REMD) simulation method with normal pressure for all replicas (REMD-NV(p) T). This method is suitable for systems for which conventional constant NPT-setups are difficult to implement. In this implementation, each replica has an individual volume, with normal pressure maintained for each replica in the simulation. We derive a novel exchange term and validate this method on the structural properties of SPC/E water and dialanine (Ala2) in the bulk and in the presence of a graphene layer. Compared to conventional constant NPT-REMD and NVT-REMD simulations, we find that the structural properties of our new method are in good agreement with simulations in the NPT-ensemble at all temperatures. The structural properties of the systems considered are affected by high pressures at elevated temperatures in the constant NVT-ensemble, an effect that our method corrects for. Unprojected distributions reveal that essential motions of the peptide are affected by the presence of the barostat in the NPT implementation but that the dynamical eigenmodes of the NV(p)T method are in close quantitative agreement with the NVT-ensemble.

  4. A canonical replica exchange molecular dynamics implementation with normal pressure in each replica.

    PubMed

    Peter, Emanuel K; Pivkin, Igor V; Shea, Joan-Emma

    2016-07-28

    In this paper, we present a new canonical replica exchange molecular dynamics (REMD) simulation method with normal pressure for all replicas (REMD-NV(p) T). This method is suitable for systems for which conventional constant NPT-setups are difficult to implement. In this implementation, each replica has an individual volume, with normal pressure maintained for each replica in the simulation. We derive a novel exchange term and validate this method on the structural properties of SPC/E water and dialanine (Ala2) in the bulk and in the presence of a graphene layer. Compared to conventional constant NPT-REMD and NVT-REMD simulations, we find that the structural properties of our new method are in good agreement with simulations in the NPT-ensemble at all temperatures. The structural properties of the systems considered are affected by high pressures at elevated temperatures in the constant NVT-ensemble, an effect that our method corrects for. Unprojected distributions reveal that essential motions of the peptide are affected by the presence of the barostat in the NPT implementation but that the dynamical eigenmodes of the NV(p)T method are in close quantitative agreement with the NVT-ensemble. PMID:27475393

  5. Wafer-to-wafer bonding of nonplanarized MEMS surfaces using solder

    NASA Astrophysics Data System (ADS)

    Sparks, D.; Queen, G.; Weston, R.; Woodward, G.; Putty, M.; Jordan, L.; Zarabadi, S.; Jayakar, K.

    2001-11-01

    The fabrication and reliability of a solder wafer-to-wafer bonding process is discussed. Using a solder reflow process allows vacuum packaging to be accomplished with unplanarized complementary metal-oxide semiconductor (CMOS) surface topography. This capability enables standard CMOS processes, and integrated microelectromechanical systems devices to be packaged at the chip-level. Alloy variations give this process the ability to bond at lower temperatures than most alternatives. Factors affecting hermeticity, shorts, Q values, shifting cavity pressure, wafer saw cleanliness and corrosion resistance will be covered.

  6. Effect of wafer geometry on lithography chucking processes

    NASA Astrophysics Data System (ADS)

    Turner, Kevin T.; Sinha, Jaydeep K.

    2015-03-01

    Wafer flatness during exposure in lithography tools is critical and is becoming more important as feature sizes in devices shrink. While chucks are used to support and flatten the wafer during exposure, it is essential that wafer geometry be controlled as well. Thickness variations of the wafer and high-frequency wafer shape components can lead to poor flatness of the chucked wafer and ultimately patterning problems, such as defocus errors. The objective of this work is to understand how process-induced wafer geometry, resulting from deposited films with non-uniform stress, can lead to high-frequency wafer shape variations that prevent complete chucking in lithography scanners. In this paper, we discuss both the acceptable limits of wafer shape that permit complete chucking to be achieved, and how non-uniform residual stresses in films, either due to patterning or process non-uniformity, can induce high spatial frequency wafer shape components that prevent chucking. This paper describes mechanics models that relate non-uniform film stress to wafer shape and presents results for two example cases. The models and results can be used as a basis for establishing control strategies for managing process-induced wafer geometry in order to avoid wafer flatness-induced errors in lithography processes.

  7. Apparatus for edge etching of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Casajus, A.

    1986-01-01

    A device for use in the production of semiconductors, characterized by etching in a rapidly rotating etching bath is described. The fast rotation causes the surface of the etching bath to assume the form of a paraboloid of revolution, so that the semiconductor wafer adjusted at a given height above the resting bath surface is only attacked by etchant at the edges.

  8. Methanol Steam Reformer on a Silicon Wafer

    SciTech Connect

    Park, H; Malen, J; Piggott, T; Morse, J; Sopchak, D; Greif, R; Grigoropoulos, C; Havstad, M; Upadhye, R

    2004-04-15

    A study of the reforming rates, heat transfer and flow through a methanol reforming catalytic microreactor fabricated on a silicon wafer are presented. Comparison of computed and measured conversion efficiencies are shown to be favorable. Concepts for insulating the reactor while maintaining small overall size and starting operation from ambient temperature are analyzed.

  9. Development of a rubber component model suitable for being implemented in railway dynamic simulation programs

    NASA Astrophysics Data System (ADS)

    Alonso, A.; Gil-Negrete, N.; Nieto, J.; Giménez, J. G.

    2013-06-01

    Rubber elements are widely used in the railway industry in order to achieve vibration transmission requirements. Although they are critical components in railway vehicles, their modelling in the dynamic models of railway vehicles is usually relatively simple: it is usual to characterise them using a simple linear model formed by a spring and a viscous dashpot in parallel. In this paper the behaviour of typical rubber elements is analysed and a model that allows more accurately the prediction of its behaviour is proposed. The methodology to implement this model in railway simulation programs is also discussed.

  10. Reconfigurable Flight Control Using Nonlinear Dynamic Inversion with a Special Accelerometer Implementation

    NASA Technical Reports Server (NTRS)

    Bacon, Barton J.; Ostroff, Aaron J.

    2000-01-01

    This paper presents an approach to on-line control design for aircraft that have suffered either actuator failure, missing effector surfaces, surface damage, or any combination. The approach is based on a modified version of nonlinear dynamic inversion. The approach does not require a model of the baseline vehicle (effectors at zero deflection), but does require feedback of accelerations and effector positions. Implementation issues are addressed and the method is demonstrated on an advanced tailless aircraft. An experimental simulation analysis tool is used to directly evaluate the nonlinear system's stability robustness.

  11. Studying chemical reactions in biological systems with MBN Explorer: implementation of molecular mechanics with dynamical topology

    NASA Astrophysics Data System (ADS)

    Sushko, Gennady B.; Solov'yov, Ilia A.; Verkhovtsev, Alexey V.; Volkov, Sergey N.; Solov'yov, Andrey V.

    2016-01-01

    The concept of molecular mechanics force field has been widely accepted nowadays for studying various processes in biomolecular systems. In this paper, we suggest a modification for the standard CHARMM force field that permits simulations of systems with dynamically changing molecular topologies. The implementation of the modified force field was carried out in the popular program MBN Explorer, and, to support the development, we provide several illustrative case studies where dynamical topology is necessary. In particular, it is shown that the modified molecular mechanics force field can be applied for studying processes where rupture of chemical bonds plays an essential role, e.g., in irradiation- or collision-induced damage, and also in transformation and fragmentation processes involving biomolecular systems. Contribution to the Topical Issue "COST Action Nano-IBCT: Nano-scale Processes Behind Ion-Beam Cancer Therapy", edited by Andrey V. Solov'yov, Nigel Mason, Gustavo Garcia and Eugene Surdutovich.

  12. Inspection of mechanical and electrical properties of silicon wafers using terahertz tomography and spectroscopy

    NASA Astrophysics Data System (ADS)

    Arnold, Thomas; Muehleisen, Wolfgang; Schicker, Johannes; Hirschl, Christina

    2015-05-01

    Two different THz applications in the semiconductor industry were explored and validated against established reference measurement techniques and simulations. The first application investigated the possibility of measuring mechanical deformation behaviour of silicon wafers. Time-domain THz tomography mapping scans were carried out to measure wafer thickness and flatness, both in the native state and under different external mechanical loads. These measurements were carried out for a variety of wafers, and the ensuing deformation maps used to validate newly developed numerical simulation models for wafer deformation, and vice versa. In the second part of this paper, carrier dynamics of optically injected charges were investigated by THz spectroscopy. THz pump/probe measurements were carried out in transmission and reflection arrangements on silicon wafers illuminated by a metal halide light source. The light source generates free charge carriers in the semiconductor material that affect the transmission and reflection properties of the semiconductor material. The results of the THz measurements are compared to established standard techniques, like microwave-detected photo-conductance decay (MWPCD) or quasi-steady-state photo conductance (QSSPC) measurements. The defective areas identified with the THz measurements are in good agreement with the defective areas identified by the reference methods. A common benefit of time-domain THz measurements is that the wafer thickness, which is an important measure for the interaction volume of the THz radiation with the semiconductor material, can be calculated from the time- domain signals. The results indicate that THz spectroscopy and imaging can be valuable tools for defect analysis and quality control of silicon wafers, especially since the measurement is fully contact-free and can determine mechanical and electrical properties within a single modality.

  13. Wafer capping of MEMS with fab-friendly metals

    NASA Astrophysics Data System (ADS)

    Martin, Jack

    2007-01-01

    Inertial MEMS (Micro Electro Mechanical System) sensors are normally sealed in hermetic enclosures. Some are assembled in hermetic packages but wafer level packaging has become much more important in recent years. Anodic bonding can be used to achieve wafer level seals between silicon and glass but most suppliers of inertial sensors screen print glass frit onto silicon cap wafers. After removing the organic vehicle, these patterned cap wafers are sealed to device wafer prior to wafer singulation and plastic packaging. Anodic and glass frit bonding are both cost-effective. However, they impose size, quality and performance limitations. Wafer level sealing with a metal removes some of these limitations but introduces other concerns. This paper will review the current wafer level hermetic processes followed by a description of a thermocompression metal seal technology that is compatible with IC fabrication.

  14. Wafer plane inspection for advanced reticle defects

    NASA Astrophysics Data System (ADS)

    Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

    2008-05-01

    Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

  15. Analysis of the Noble Metals on Silicon Wafers by Chemical Collection and ICPMS

    NASA Astrophysics Data System (ADS)

    Fontaine, H.; Hureau, D.; Groz, M.; Despois, D.; Louis, C.

    2011-11-01

    The measurement of Ag, Pt and Au on wafer surfaces was addressed by a liquid phase chemical collection coupled to ICPMS analysis. Three chemistries were evaluated from intentionally contaminated wafers in the E12 to E15 at/cm2 concentration range. Different modes of voluntary wafer contamination allowed us to consider both the chemical form of the contaminant (i.e. ionic and metal forms) and its localization (i.e. on the surface and included in the oxide layer). Diluted HNO3 was used for Ag collection on the wafer surface allowing a collection efficiency (CE) higher than 90%. Regarding Pt and Au, diluted aqua regia and diluted HF/aqua regia were used. The first solution leads to a good collection of Au and Pt on the wafer surface (CE >90%) and is inefficient for contamination included in the oxide layer while the second one addresses the two cases with collection rates higher than 94%. Finally, detection limits of few E10 at/cm2 were determined showing the relevance of the technique implemented.

  16. Evaluation of water based intelligent fluids for resist stripping in single wafer cleaning tools

    NASA Astrophysics Data System (ADS)

    Rudolph, Matthias; Esche, Silvio; Hohle, Christoph; Schumann, Dirk; Steinke, Philipp; Thrun, Xaver; von Sonntag, Justus

    2016-03-01

    The application of phasefluid based intelligent fluids® in the field of photoresist stripping was studied. Due to their highly dynamic inner structure, phasefluids penetrate into the polymer network of photoresists and small gaps between resist layer and substrate and lift off the material from the surface. These non-aggressive stripping fluids were investigated regarding their efficiency in various resist stripping applications including initial results on copper metallization. Furthermore intelligent fluids® have been evaluated on an industry standard high volume single wafer cleaner. A baseline process on 300 mm wafers has been developed and characterized in terms of metallic and ionic impurities and defect level. Finally a general proof of concept for removal of positive tone resist from 300 mm silicon wafers is demonstrated.

  17. Method to reduce particles and defects on unprocessed wafers caused by clusterization and cross contamination from processed wafers

    NASA Astrophysics Data System (ADS)

    Sant, Sanket

    2012-10-01

    One of the leading problems in the semiconductor industry with device scaling is defects and particles. Of this the most important ones are particles that can clusterize (condensate) with exposure to atmosphere. These clusters can be formed by residual halides or halide structures on the wafer surface reacting with surface moisture which is unavoidable. Such clusters can prove detrimental to the processed wafer, but more interestingly can migrate inside the FOUP onto unetched wafers. This migration of clusters can cause micro masking and other defects when these wafers are processed. This reduces the wafer yield and is challenging to resolve as we move towards smaller nodes. In this work, different methods of eliminating cross condensation defects and avoiding cluster formation on processed wafers are discussed. UV, Ozone and heat are the primary candidates explored and the mechanism behind each method is explored and optimized. Impact of each mechanism on wafer yield, part corrosion in a reactor platform and wafer throughput has been studied.

  18. Process variation monitoring (PVM) by wafer inspection tool as a complementary method to CD-SEM for mapping LER and defect density on production wafers

    NASA Astrophysics Data System (ADS)

    Shabtay, Saar; Blumberg, Yuval; Levi, Shimon; Greenberg, Gadi; Harel, Daniel; Conley, Amiad; Meshulach, Doron; Kan, Kobi; Dolev, Ido; Kumar, Surender; Mendel, Kalia; Goto, Kaori; Yamaguchi, Naoaki; Iriuchijima, Yasuhiro; Nakamura, Shinichi; Nagaoka, Shirou; Sekito, Toshiyuki

    2009-03-01

    As design rules shrink, Critical Dimension Uniformity (CDU) and Line Edge Roughness (LER) constitute a higher percentage of the line-width and hence the need to control these parameters increases. Sources of CDU and LER variations include: scanner auto-focus accuracy and stability, lithography stack thickness and composition variations, exposure variations, etc. These process variations in advanced VLSI manufacturing processes, specifically in memory devices where CDU and LER affect cell-to-cell parametric variations, are well known to significantly impact device performance and die yield. Traditionally, measurements of LER are performed by CD-SEM or Optical Critical Dimension (OCD) metrology tools. Typically, these measurements require a relatively long time and cover only a small fraction of the wafer area. In this paper we present the results of a collaborative work of the Process Diagnostic & Control Business Unit of Applied Materials® and Nikon Corporation®, on the implementation of a complementary method to the CD-SEM and OCD tools, to monitor post litho develop CDU and LER on production wafers. The method, referred to as Process Variation Monitoring (PVM), is based on measuring variations in the light reflected from periodic structures, under optimized illumination and collection conditions, and is demonstrated using Applied Materials DUV brightfield (BF) wafer inspection tool. It will be shown that full polarization control in illumination and collection paths of the wafer inspection tool is critical to enable to set an optimized Process Variation Monitoring recipe.

  19. Non-linear dynamics in recurrently connected neural circuits implement Bayesian inference by sampling

    NASA Astrophysics Data System (ADS)

    Ticchi, Alessandro; Faisal, Aldo A.; Brain; Behaviour Lab Team

    2015-03-01

    Experimental evidence at the behavioural-level shows that the brains are able to make Bayes-optimal inference and decisions (Kording and Wolpert 2004, Nature; Ernst and Banks, 2002, Nature), yet at the circuit level little is known about how neural circuits may implement Bayesian learning and inference (but see (Ma et al. 2006, Nat Neurosci)). Molecular sources of noise are clearly established to be powerful enough to pose limits to neural function and structure in the brain (Faisal et al. 2008, Nat Rev Neurosci; Faisal et al. 2005, Curr Biol). We propose a spking neuron model where we exploit molecular noise as a useful resource to implement close-to-optimal inference by sampling. Specifically, we derive a synaptic plasticity rule which, coupled with integrate-and-fire neural dynamics and recurrent inhibitory connections, enables a neural population to learn the statistical properties of the received sensory input (prior). Moreover, the proposed model allows to combine prior knowledge with additional sources of information (likelihood) from another neural population, and to implement in spiking neurons a Markov Chain Monte Carlo algorithm which generates samples from the inferred posterior distribution.

  20. Dissipative Particle Dynamics Simulations at Extreme Scale: GPU Algorithms, Implementation and Applications

    NASA Astrophysics Data System (ADS)

    Tang, Yu-Hang; Karniadakis, George; Crunch Team

    2014-03-01

    We present a scalable dissipative particle dynamics simulation code, fully implemented on the Graphics Processing Units (GPUs) using a hybrid CUDA/MPI programming model, which achieves 10-30 times speedup on a single GPU over 16 CPU cores and almost linear weak scaling across a thousand nodes. A unified framework is developed within which the efficient generation of the neighbor list and maintaining particle data locality are addressed. Our algorithm generates strictly ordered neighbor lists in parallel, while the construction is deterministic and makes no use of atomic operations or sorting. Such neighbor list leads to optimal data loading efficiency when combined with a two-level particle reordering scheme. A faster in situ generation scheme for Gaussian random numbers is proposed using precomputed binary signatures. We designed custom transcendental functions that are fast and accurate for evaluating the pairwise interaction. Computer benchmarks demonstrate the speedup of our implementation over the CPU implementation as well as strong and weak scalability. A large-scale simulation of spontaneous vesicle formation consisting of 128 million particles was conducted to illustrate the practicality of our code in real-world applications. This work was supported by the new Department of Energy Collaboratory on Mathematics for Mesoscopic Modeling of Materials (CM4). Simulations were carried out at the Oak Ridge Leadership Computing Facility through the INCITE program under project BIP017.

  1. On the implementation of error handling in dynamic interfaces to scientific codes

    SciTech Connect

    Solomon, C.J.

    1993-11-01

    With the advent of powerful workstations with windowing systems, the scientific community has become interested in user friendly interfaces as a means of promoting the distribution of scientific codes to colleagues. Distributing scientific codes to a wider audience can, however, be problematic because scientists, who are familiar with the problem being addressed but not aware of necessary operational details, are encouraged to use the codes. A more friendly environment that not only guides user inputs, but also helps catch errors is needed. This thesis presents a dynamic graphical user interface (GUI) creation system with user controlled support for error detection and handling. The system checks a series of constraints defining a valid input set whenever the state of the system changes and notifies the user when an error has occurred. A naive checking scheme was implemented that checks every constraint every time the system changes. However, this method examines many constraints whose values have not changed. Therefore, a minimum evaluation scheme that only checks those constraints that may have been violated was implemented. This system was implemented in a prototype and user testing was used to determine if it was a success. Users examined both the GUI creation system and the end-user environment. The users found both to be easy to use and efficient enough for practical use. Moreover, they concluded that the system would promote distribution.

  2. ThermoData Engine (TDE) software implementation of the dynamic data evaluation concept. 7. Ternary mixtures.

    PubMed

    Diky, Vladimir; Chirico, Robert D; Muzny, Chris D; Kazakov, Andrei F; Kroenlein, Kenneth; Magee, Joseph W; Abdulagatov, Ilmutdin; Kang, Jeong Won; Frenkel, Michael

    2012-01-23

    ThermoData Engine (TDE) is the first full-scale software implementation of the dynamic data evaluation concept, as reported in this journal. The present paper describes the first application of this concept to the evaluation of thermophysical properties for ternary chemical systems. The method involves construction of Redlich-Kister type equations for individual properties (excess volume, thermal conductivity, viscosity, surface tension, and excess enthalpy) and activity coefficient models for phase equilibrium properties (vapor-liquid and liquid-liquid equilibrium). Constructed ternary models are based on those for the three pure component and three binary subsystems evaluated on demand through the TDE software algorithms. All models are described in detail, and extensions to the class structure of the program are provided. Reliable evaluation of properties for the binary subsystems is essential for successful property evaluations for ternary systems, and algorithms are described to aid appropriate parameter selection and fitting for the implemented activity coefficient models (NRTL, Wilson, Van Laar, Redlich-Kister, and UNIQUAC). Two activity coefficient models based on group contributions (original UNIFAC and NIST-KT-UNIFAC) are also implemented. Novel features of the user interface are shown, and directions for future enhancements are outlined. PMID:22107452

  3. Efficient implementation of constant pH molecular dynamics on modern graphics processors.

    PubMed

    Arthur, Evan J; Brooks, Charles L

    2016-09-15

    The treatment of pH sensitive ionization states for titratable residues in proteins is often omitted from molecular dynamics (MD) simulations. While static charge models can answer many questions regarding protein conformational equilibrium and protein-ligand interactions, pH-sensitive phenomena such as acid-activated chaperones and amyloidogenic protein aggregation are inaccessible to such models. Constant pH molecular dynamics (CPHMD) coupled with the Generalized Born with a Simple sWitching function (GBSW) implicit solvent model provide an accurate framework for simulating pH sensitive processes in biological systems. Although this combination has demonstrated success in predicting pKa values of protein structures, and in exploring dynamics of ionizable side-chains, its speed has been an impediment to routine application. The recent availability of low-cost graphics processing unit (GPU) chipsets with thousands of processing cores, together with the implementation of the accurate GBSW implicit solvent model on those chipsets (Arthur and Brooks, J. Comput. Chem. 2016, 37, 927), provide an opportunity to improve the speed of CPHMD and ionization modeling greatly. Here, we present a first implementation of GPU-enabled CPHMD within the CHARMM-OpenMM simulation package interface. Depending on the system size and nonbonded force cutoff parameters, we find speed increases of between one and three orders of magnitude. Additionally, the algorithm scales better with system size than the CPU-based algorithm, thus allowing for larger systems to be modeled in a cost effective manner. We anticipate that the improved performance of this methodology will open the door for broad-spread application of CPHMD in its modeling pH-mediated biological processes. © 2016 Wiley Periodicals, Inc. PMID:27405884

  4. Innovative optical alignment technique for CMP wafers

    NASA Astrophysics Data System (ADS)

    Sugaya, Ayako; Kanaya, Yuho; Nakajima, Shinichi; Nagayama, Tadashi; Shiraishi, Naomasa

    2002-07-01

    Detecting position of the wafers such as after CMP process is critical theme of current and forthcoming IC manufacturing. The alignment system must be with high accuracy for any process. To satisfy such requirements, we have studied and analyzed factors that have made alignment difficult. From the result of the studies, we have developed new optical alignment techniques which improve the accuracy of FIA (alignment sensor of Nikon's NSR series) and examined them. The approaches are optimizing the focus position, developing an advanced algorithm for position detection, and selecting a suitable mark design. For experiment, we have developed the special wafers that make it possible to evaluate the influence of CMP processes. The experimental results show that the overlay errors decrease dramatically with the new alignment techniques. FIA with these new techniques will be much accurate and suitable alignment sensor for CMP and other processes of future generation ULSI production.

  5. Optical cavity furnace for semiconductor wafer processing

    DOEpatents

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  6. Devices using resin wafers and applications thereof

    DOEpatents

    Lin, YuPo J.; Henry, Michael P.; Snyder, Seth W.; St. Martin, Edward; Arora, Michelle; de la Garza, Linda

    2009-03-24

    Devices incorporating a thin wafer of electrically and ionically conductive porous material made by the method of introducing a mixture of a thermoplastic binder and one or more of anion exchange moieties or cation exchange moieties or mixtures thereof and/or one or more of a protein capture resin and an electrically conductive material into a mold. The mixture is subjected to temperatures in the range of from about 60.degree. C. to about 170.degree. C. at pressures in the range of from about 0 to about 500 psig for a time in the range of from about 1 to about 240 minutes to form thin wafers. Devices include electrodeionization and separative bioreactors in the production of organic and amino acids, alcohols or esters for regenerating cofactors in enzymes and microbial cells.

  7. TOPICAL REVIEW: Wafer level packaging of MEMS

    NASA Astrophysics Data System (ADS)

    Esashi, Masayoshi

    2008-07-01

    Wafer level packaging plays many important roles for MEMS (micro electro mechanical systems), including cost, yield and reliability. MEMS structures on silicon chips are encapsulated between bonded wafers or by surface micromachining, and electrical interconnections are made from the cavity. Bonding at the interface, such as glass-Si anodic bonding and metal-to-metal bonding, requires electrical interconnection through the lid vias in many cases. On the other hand, lateral electrical interconnections on the surface of the chip are used for bonding with intermediate melting materials, such as low melting point glass and solder. The cavity formed by surface micromachining is made using sacrificial etching, and the openings needed for the sacrificial etching are plugged using deposition sealing methods. Vacuum packaging methods and the structures for electrical feedthrough for the interconnection are discussed in this review.

  8. Wafer dicing utilizing unique beam shapes

    NASA Astrophysics Data System (ADS)

    Lizotte, Todd; Ohar, Orest

    2007-09-01

    Laser dicing of wafers is of keen interest to the semiconductor and LED industry. Devices such as ASICs, Ultra-thin Wafer Scale Packages and LEDS are unique in that they typically are formed from various materials in a multilayered structure. Many of these layers include active device materials, passivation coatings, conductors and dielectric films all deposited on top of a bulk wafer substrate and all potentially having differing ablation thresholds. These composite multi-layered structures require high finesse laser processes to ensure yields, cut quality and low process cost. Such processes have become very complex over the years as new devices have become miniaturized, requiring smaller kerf sizes. Of critical concern is the need to minimize substrate micro-cracking or lift off of upper layers along the dicing streets which directly corresponds to bulk device strength and device operational integrity over its projected lifetime. Laser processes involving the sequential use of single or multiple diode pumped solid state (DPSS) lasers, such as UV DPSS (355nn, 266nm, 532 nm), VIS DPSS (~532 nm) and IR DPSS (1064nm, 1070nm) as well as (UV, VIS, NIR, FIR and Eye Safe Wavelengths) DPFL (Diode Pumped Fiber Lasers) lasers to penetrate various and differing material layers and substrates including Silicon Carbide (SiC), Silicon, GaAs and Sapphire. Development of beam shaping optics with the purpose of permitting two or more differing energy densities within a single focused or imaged beam spot would provide opportunities for pre-processing or pre-scribing of thinner cover layers, while following through with a higher energy density segment to cut through the bulk base substrates. This paper will describe the development of beam shaping optical elements with unique beam shapes that could benefit dicing and patterning of delicate thin film coatings. Various designs will be described, with processing examples using LED wafer materials.

  9. Precipitating Chromium Impurities in Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Salama, A. M.

    1982-01-01

    Two new treatments for silicon wafers improve solar-cell conversion efficiency by precipitating electrically-active chromium impurities. One method is simple heat treatment. Other involves laser-induced damage followed by similar heat treatment. Chromium is one impurity of concern in metallurgical-grade silicon for solar cells. In new treatment, chromium active centers are made electrically inactive by precipitating chromium from solid solution, enabling use of lower grade, lower cost silicon in cell manufacture.

  10. Wafer plane inspection with soft resist thresholding

    NASA Astrophysics Data System (ADS)

    Hess, Carl; Shi, Rui-fang; Wihl, Mark; Xiong, Yalin; Pang, Song

    2008-10-01

    Wafer Plane Inspection (WPI) is an inspection mode on the KLA-Tencor TeraScaTM platform that uses the high signalto- noise ratio images from the high numerical aperture microscope, and then models the entire lithographic process to enable defect detection on the wafer plane[1]. This technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. WPI accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. There are several advantages to this approach: (1) the high fidelity of the images provide a sensitivity advantage over competing approaches; (2) the ability to perform defect detection on the wafer plane allows one to only see those defects that have a printing impact on the wafer; (3) the use of modeling on the lithographic portion of the flow enables unprecedented flexibility to support arbitrary illumination profiles, process-window inspection in unit time, and combination modes to find both printing and non-printing defects. WPI is proving to be a valuable addition to the KLA-Tencor detection algorithm suite. The modeling portion of WPI uses a single resist threshold as the final step in the processing. This has been shown to be adequate on several advanced customer layers, but is not ideal for all layers. Actual resist chemistry has complicated processes including acid and base-diffusion and quench that are not consistently well-modeled with a single resist threshold. We have considered the use of an advanced resist model for WPI, but rejected it because the burdensome requirements for the calibration of the model were not practical for reticle inspection. This paper describes an alternative approach that allows for a "soft" resist threshold to be applied that provides a more robust solution for the most challenging processes. This approach is just

  11. VLED for Si wafer-level packaging

    NASA Astrophysics Data System (ADS)

    Chu, Chen-Fu; Chen, Chiming; Yen, Jui-Kang; Chen, Yung-Wei; Tsou, Chingfu; Chang, Chunming; Doan, Trung; Tran, Chuong Anh

    2012-03-01

    In this paper, we introduced the advantages of Vertical Light emitting diode (VLED) on copper alloy with Si-wafer level packaging technologies. The silicon-based packaging substrate starts with a <100> dou-ble-side polished p-type silicon wafer, then anisotropic wet etching technology is done to construct the re-flector depression and micro through-holes on the silicon substrate. The operating voltage, at a typical cur-rent of 350 milli-ampere (mA), is 3.2V. The operation voltage is less than 3.7V under higher current driving conditions of 1A. The VLED chip on Si package has excellent heat dissipation and can be operated at high currents up to 1A without efficiency degradation. The typical spatial radiation pattern emits a uniform light lambertian distribution from -65° to 65° which can be easily fit for secondary optics. The correlated color temperature (CCT) has only 5% variation for daylight and less than 2% variation for warm white, when the junction temperature is increased from 25°C to 110°C, suggesting a stable CCT during operation for general lighting application. Coupled with aspheric lens and micro lens array in a wafer level process, it has almost the same light distribution intensity for special secondary optics lighting applications. In addition, the ul-tra-violet (UV) VLED, featuring a silicon substrate and hard glass cover, manufactured by wafer level pack-aging emits high power UV wavelengths appropriate for curing, currency, document verification, tanning, medical, and sterilization applications.

  12. Mask-to-wafer alignment system

    DOEpatents

    Sweatt, William C.; Tichenor, Daniel A.; Haney, Steven J.

    2003-11-04

    A modified beam splitter that has a hole pattern that is symmetric in one axis and anti-symmetric in the other can be employed in a mask-to-wafer alignment device. The device is particularly suited for rough alignment using visible light. The modified beam splitter transmits and reflects light from a source of electromagnetic radiation and it includes a substrate that has a first surface facing the source of electromagnetic radiation and second surface that is reflective of said electromagnetic radiation. The substrate defines a hole pattern about a central line of the substrate. In operation, an input beam from a camera is directed toward the modified beam splitter and the light from the camera that passes through the holes illuminates the reticle on the wafer. The light beam from the camera also projects an image of a corresponding reticle pattern that is formed on the mask surface of the that is positioned downstream from the camera. Alignment can be accomplished by detecting the radiation that is reflected from the second surface of the modified beam splitter since the reflected radiation contains both the image of the pattern from the mask and a corresponding pattern on the wafer.

  13. Wafer level test solutions for IR sensors

    NASA Astrophysics Data System (ADS)

    Giessmann, Sebastian; Werner, Frank-Michael

    2014-05-01

    Wafer probers provide an established platform for performing electrical measurements at wafer level for CMOS and similar process technologies. For testing IR sensors, the requirements are beyond the standard prober capabilities. This presentation will give an overview about state of the art IR sensor probing systems reaching from flexible engineering solutions to automated production needs. Cooled sensors typically need to be tested at a target temperature below 80 K. Not only is the device temperature important but also the surrounding environment is required to prevent background radiation from reaching the device under test. To achieve that, a cryogenic shield is protecting the movable chuck. By operating that shield to attract residual gases inside the chamber, a completely contamination-free test environment can be guaranteed. The use of special black coatings are furthermore supporting the removal of stray light. Typically, probe card needles are operating at ambient (room) temperature when connecting to the wafer. To avoid the entrance of heat, which can result in distorted measurements, the probe card is fully embedded into the cryogenic shield. A shutter system, located above the probe field, is designed to switch between the microscope view to align the sensor under the needles and the test relevant setup. This includes a completely closed position to take dark current measurements. Another position holds a possible filter glass with the required aperture opening. The necessary infrared sources to stimulate the device are located above.

  14. Wafer-scale micro-optics fabrication

    NASA Astrophysics Data System (ADS)

    Voelkel, Reinhard

    2012-07-01

    Micro-optics is an indispensable key enabling technology for many products and applications today. Probably the most prestigious examples are the diffractive light shaping elements used in high-end DUV lithography steppers. Highly-efficient refractive and diffractive micro-optical elements are used for precise beam and pupil shaping. Micro-optics had a major impact on the reduction of aberrations and diffraction effects in projection lithography, allowing a resolution enhancement from 250 nm to 45 nm within the past decade. Micro-optics also plays a decisive role in medical devices (endoscopes, ophthalmology), in all laser-based devices and fiber communication networks, bringing high-speed internet to our homes. Even our modern smart phones contain a variety of micro-optical elements. For example, LED flash light shaping elements, the secondary camera, ambient light and proximity sensors. Wherever light is involved, micro-optics offers the chance to further miniaturize a device, to improve its performance, or to reduce manufacturing and packaging costs. Wafer-scale micro-optics fabrication is based on technology established by the semiconductor industry. Thousands of components are fabricated in parallel on a wafer. This review paper recapitulates major steps and inventions in wafer-scale micro-optics technology. The state-of-the-art of fabrication, testing and packaging technology is summarized.

  15. Wrinkled bilayer graphene with wafer scale mechanical strain

    NASA Astrophysics Data System (ADS)

    Mikael, Solomon; Seo, Jung-Hun; Javadi, Alireza; Gong, Shaoqin; Ma, Zhenqiang

    2016-05-01

    Wafer-scale strained bilayer graphene is demonstrated by employing a silicon nitride (Si3N4) stressor layer. Different magnitudes of compressive stress up to 840 MPa were engineered by adjusting the Si3N4 deposition recipes, and different strain conditions were analyzed using Raman spectroscopy. The strained graphene displayed significant G peak shifts and G peak splitting with 16.2 cm-1 and 23.0 cm-1 of the G band and two-dimensional band shift, which corresponds to 0.26% of strain. Raman mapping of large regions of the graphene films found that the largest shifts/splitting occurred near the bilayer regions of the graphene films. The significance of our approach lies in the fact that it can be performed in a conventional microfabrication process, i.e., the plasma enhanced chemical vapor deposition system, and thus easily implemented for large scale production.

  16. Wafer weak point detection based on aerial images or WLCD

    NASA Astrophysics Data System (ADS)

    Ning, Guoxiang; Philipp, Peter; Litt, Lloyd C.; Ackmann, Paul; Crell, Christian; Chen, Norman

    2015-10-01

    Aerial image measurement is a key technique for model based optical proximity correction (OPC) verification. Actual aerial images obtained by AIMS (aerial image measurement system) or WLCD (wafer level critical dimension) can detect printed wafer weak point structures in advance of wafer exposure and defect inspection. Normally, the potential wafer weak points are determined based on optical rule check (ORC) simulation in advance. However, the correlation to real wafer weak points is often not perfect due to the contribution of mask three dimension (M3D) effects, actual mask errors, and scanner lens effects. If the design weak points can accurately be detected in advance, it will reduce the wafer fab cost and improve cycle time. WLCD or AIMS tools are able to measure the aerial images CD and bossung curve through focus window. However, it is difficult to detect the wafer weak point in advance without defining selection criteria. In this study, wafer weak points sensitive to mask mean-to-nominal values are characterized for a process with very high MEEF (normally more than 4). Aerial image CD uses fixed threshold to detect the wafer weak points. By using WLCD through threshold and focus window, the efficiency of wafer weak point detection is also demonstrated. A novel method using contrast range evaluation is shown in the paper. Use of the slope of aerial images for more accurate detection of the wafer weak points using WLCD is also discussed. The contrast range can also be used to detect the wafer weak points in advance. Further, since the mean to nominal of the reticle contributes to the effective contrast range in a high MEEF area this work shows that control of the mask error is critical for high MEEF layers such as poly, active and metal layers. Wafer process based weak points that cannot be detected by wafer lithography CD or WLCD will be discussed.

  17. A scalable implementation of a finite-volume dynamical core in the Community Atmosphere Model

    SciTech Connect

    Mirin, A A; Sawyer, W B

    2004-09-24

    A distributed memory message-passing parallel implementation of a finite-volume discretization of the primitive equations in the Community Atmosphere Model is presented. Due to the data dependencies resulting from the polar singularity of the latitude-longitude coordinate system, we employ two separate domain decompositions within the dynamical core--one in latitude/level space, and the other in longitude/latitude space. This requires that the data be periodically redistributed between these two decompositions. In addition, the domains contain halo regions that cover the nearest neighbor data dependencies. A combination of several techniques, such as one-sided communication and multithreading, are presented to optimize data movements. The resulting algorithm is shown to scale to very large machine configurations, even for relatively coarse resolutions.

  18. Dynamic detection of window starting positions and its implementation within an activity recognition framework.

    PubMed

    Ni, Qin; Patterson, Timothy; Cleland, Ian; Nugent, Chris

    2016-08-01

    Activity recognition is an intrinsic component of many pervasive computing and ambient intelligent solutions. This has been facilitated by an explosion of technological developments in the area of wireless sensor network, wearable and mobile computing. Yet, delivering robust activity recognition, which could be deployed at scale in a real world environment, still remains an active research challenge. Much of the existing literature to date has focused on applying machine learning techniques to pre-segmented data collected in controlled laboratory environments. Whilst this approach can provide valuable ground truth information from which to build recognition models, these techniques often do not function well when implemented in near real time applications. This paper presents the application of a multivariate online change detection algorithm to dynamically detect the starting position of windows for the purposes of activity recognition. PMID:27392647

  19. Steering quantum dynamics via bang-bang control: Implementing optimal fixed-point quantum search algorithm

    NASA Astrophysics Data System (ADS)

    Bhole, Gaurav; Anjusha, V. S.; Mahesh, T. S.

    2016-04-01

    A robust control over quantum dynamics is of paramount importance for quantum technologies. Many of the existing control techniques are based on smooth Hamiltonian modulations involving repeated calculations of basic unitaries resulting in time complexities scaling rapidly with the length of the control sequence. Here we show that bang-bang controls need one-time calculation of basic unitaries and hence scale much more efficiently. By employing a global optimization routine such as the genetic algorithm, it is possible to synthesize not only highly intricate unitaries, but also certain nonunitary operations. We demonstrate the unitary control through the implementation of the optimal fixed-point quantum search algorithm in a three-qubit nuclear magnetic resonance (NMR) system. Moreover, by combining the bang-bang pulses with the crusher gradients, we also demonstrate nonunitary transformations of thermal equilibrium states into effective pure states in three- as well as five-qubit NMR systems.

  20. Implementation of a protein reduced point charge model toward molecular dynamics applications.

    PubMed

    Leherte, Laurence; Vercauteren, Daniel P

    2011-11-17

    A reduced point charge model was developed in a previous work from the study of extrema in smoothed charge density distribution functions generated from the Amber99 molecular electrostatic potential. In the present work, such a point charge distribution is coupled with the Amber99 force field and implemented in the program TINKER to allow molecular dynamics (MD) simulations of proteins. First applications to two polypeptides that involve α-helix and β-sheet motifs are analyzed and compared to all-atom MD simulations. Two types of coarse-grained (CG)-based trajectories are generated using, on one hand, harmonic bond stretching terms and, on the other hand, distance restraints. Results show that the use of the unrestrained CG conditions are sufficient to preserve most of the secondary structure characteristics but restraints lead to a better agreement between CG and all-atom simulation results such as rmsd, dipole moment, and time-dependent mean square deviation functions. PMID:21800922

  1. A Scalable Implementation of a Finite-Volume Dynamical Core in the Community Atmosphere Model

    SciTech Connect

    Sawyer, W; Mirin, A

    2004-06-25

    A distributed memory message-passing parallel implementation of a finite-volume discretization of the primitive equations in the Community Atmosphere Model is presented. Due to the data dependencies resulting from the polar singularity of the latitude-longitude coordinate system, it is necessary to employ two separate domain decompositions within the dynamical core. Data must be periodically redistributed between these two decompositions. In addition, the domains contain halo regions that cover the nearest neighbor data dependencies. A combination of several techniques, such as one-sided communication and multithreading, are presented to optimize data movements. The resulting algorithm is shown to scale to very large machine configurations, even for relatively coarse resolutions.

  2. Implementation of non-uniform FFT based Ewald summation in dissipative particle dynamics method

    NASA Astrophysics Data System (ADS)

    Wang, Yong-Lei; Laaksonen, Aatto; Lu, Zhong-Yuan

    2013-02-01

    The ENUF method, i.e., Ewald summation based on the non-uniform FFT technique (NFFT), is implemented in dissipative particle dynamics (DPD) simulation scheme to fast and accurately calculate the electrostatic interactions at mesoscopic level. In a simple model electrolyte system, the suitable ENUF-DPD parameters, including the convergence parameter α, the NFFT approximation parameter p, and the cut-offs for real and reciprocal space contributions, are carefully determined. With these optimized parameters, the ENUF-DPD method shows excellent efficiency and scales as O(NlogN). The ENUF-DPD method is further validated by investigating the effects of charge fraction of polyelectrolyte, ionic strength and counterion valency of added salts on polyelectrolyte conformations. The simulations in this paper, together with a separately published work of dendrimer-membrane complexes, show that the ENUF-DPD method is very robust and can be used to study charged complex systems at mesoscopic level.

  3. FPGA implementation of dynamic channel assignment algorithm for cognitive wireless sensor networks

    NASA Astrophysics Data System (ADS)

    Martínez, Daniela M.; Andrade, Ángel G.

    2015-07-01

    The reliability of wireless sensor networks (WSNs) in industrial applications can be thwarted due to multipath fading, noise generated by industrial equipment or heavy machinery and particularly by the interference generated from other wireless devices operating in the same spectrum band. Recently, cognitive WSNs (CWSNs) were proposed to improve the performance and reliability of WSNs in highly interfered and noisy environments. In this class of WSN, the nodes are spectrum aware, that is, they monitor the radio spectrum to find channels available for data transmission and dynamically assign and reassign nodes to low-interference condition channels. In this work, we present the implementation of a channel assignment algorithm in a field-programmable gate array, which dynamically assigns channels to sensor nodes based on the interference and noise levels experimented in the network. From the results obtained from the performance evaluation of the CWSN when the channel assignment algorithm is considered, it is possible to identify how many channels should be available in the network in order to achieve a desired percentage of successful transmissions, subject to constraints on the signal-to-interference plus noise ratio on each active link.

  4. Clinical implementation of dynamic intensity-modulated radiotherapy: Dosimetric aspects and initial experience

    PubMed Central

    Sivakumar, S. S.; Krishnamurthy, K.; Davis, C. A.; Ravichandran, R.; Kannadhasan, S.; Biunkumar, J. P.; El Ghamrawy, Kamal

    2008-01-01

    This paper describes the initial experience of quality assurance (QA) tests performed on the millennium multi-leaf collimator (mMLC) for clinical implementation of intensity-modulated radiotherapy (IMRT) using sliding window technique. The various QA tests verified the mechanical and dosimetric stability of the mMLC of linear accelerator when operated in dynamic mode (dMLC). The mechanical QA tests also verified the positional accuracy and kinetic properties of the dMLC. The stability of dMLC was analyzed qualitatively and quantitatively using radiographic film and Omnipro IMRT software. The output stability, variation in output for different sweeping gap widths, and dosimetric leaf separation were measured. Dose delivery with IMRT was verified against the dose computed by the treatment planning system (TPS). Monitor units (MUs) calculated by the planning system for the IMRT were cross-checked with independent commercial dose management software. Visual inspection and qualitative analysis showed that the leaf positioning accuracy was well within the acceptable limits. Dosimetric QA tests confirmed the dosimetric stability of the mMLC in dynamic mode. The verification of MUs using commercial software confirmed the reliability of the IMRT planning system for dose computation. The dosimetric measurements validated the fractional dose delivery. PMID:19893693

  5. Thinning of PLZT ceramic wafers for sensor integration

    NASA Astrophysics Data System (ADS)

    Jin, Na; Liu, Weiguo

    2010-08-01

    Characteristics of transparent PLZT ceramics can be tailored by controlling the component of them, and therefore showed excellent dielectric, piezoelectric, pyroelectric and ferroelectric properties. To integrate the ceramics with microelectronic circuit to realize integrated applications, the ceramic wafers have to be thinned down to micrometer scale in thickness. A7/65/35 PLZT ceramic wafer was selected in this study for the thinning process. Size of the wafer was 10×10mm with an initial thickness of 300μm. A novel membrane transfer process (MTP) was developed for the thinning and integration of the ceramic wafers. In the MTP process, the ceramic wafer was bonded to silicon wafer using a polymer bonding method. Mechanical grinding method was applied to reduce the thickness of the ceramic. To minimize the surface damage in the ceramic wafer caused by the mechanical grinding, magnetorheological finishing (MRF) method was utilized to polish the wafer. White light interference (WLI) apparatus was used to monitor the surface qualities of the grinded and ploished ceramic wafers. For the PLZT membrane obtained from the MTP process, the final thickness of the thinned and polished wafer was 10μm, the surface roughness was below 1nm in rms, and the flatness was better than λ/5.

  6. Electrooptic shutter devices utilizing PLZT ceramic wafers

    SciTech Connect

    Thornton, A.L.

    1981-01-01

    Optical transparency was achieved in lead zirconate-titanate ferroelectric ceramics by substituting moderate amounts of the element lanthanum (8 to 12%) for lead. These compositions exhibit the quadratic (Kerr) electrooptic effect. The excellent optical qualities of these materials (designated PLZT) has permitted the practical utilization of their electrooptic properties in a number of devices. All of these devices utilize the classic Kerr cell arrangement. A PLZT wafer with optical axis oriented at 45/sup 0/ with respect to the axes of polarization is sandwiched between crossed polarizers. Application of an electric field via an interdigital array of electrodes on opposing wafer surfaces forces the PLZT material into a tetragonal state with the resulting induced birefringence proportional to the square of the applied electric field. Hence, the electrooptic wafer provides a retardation of light so that a component is passed by the second crossed polarizer to achieve an ON or open state. Maximum transmission is achieved when the retardation is half-wave. Shutter devices developed by Sandia and those in continuing development are described with respect to operational characteristics and physical configuration. The devices range in size from very small apertures of 50 ..mu..m x 2 mm with center-to-center repeat dimensions of 125 ..mu..m - to very large - apertures of 15.2 cm in single pieces and mosaics with apertures of 15.2 cm x 20.3 cm. Major efforts have centered on shutter development for the protection of aircrew from eye-damaging weapon effects. Other devices are also described which: provide eye protection for welders, protect vidicon tubes, function as page composers for holographic memories serve as large aperture photographic shutters, provide stereoscopic three-dimensional TV displays, and serve as data links in a fiber-optic transmission path.

  7. Understanding the dynamics of information technology implementation: a study of clinical information systems.

    PubMed

    Paré, G; Elam, J J

    1995-01-01

    the work of a variety of clinicians. Finally, we study a nursing assessment system used by two groups of nurses (intensive care unit and resuscitation unit) at a state-of-the-art, newly established Trauma Center. Qualitative was gathered through semi-structured interviews with people involved in the implementation process as well as a sample of user representatives. More than 90 interviews were conducted over a period of six months. Observational data completed our qualitative assessment. Quantitative evidence was gathered through questionnaires administered to a small sample of key informants. Three techniques of qualitative data analysis are being used in combination, namely, coding, analytical memos and displays. Data analysis is still in its infancy at this point. Regarding its relevance to the role of the administrator, this study will allow general and health care management as well as IT professionals to gain insight into the dynamics of the implementation of innovative technologies. In other words, results from this study will provide clear and relevant answers to the questions of how and why the outcome of the information system project is influenced by the way in which the technology is introduced. PMID:8591258

  8. Super-flat wafer chucks: from simulation and testing to a complete 300mm wafer chuck with low wafer deformation between pins

    NASA Astrophysics Data System (ADS)

    Müller, Renate; Afanasiev, Kanstantin; Ziemann, Marcel; Schmidt, Volker

    2014-04-01

    Berliner Glas is a privately owned, mid-sized manufacturer of precision opto-mechanics in Germany. One specialty of Berliner Glas is the design and production of high performance vacuum and electrostatic wafer chucks. Driven by the need of lithography and inspection for smaller overlay values, we pursue the production of an ideally flat wafer chuck. An ideally flat wafer chuck holds a wafer with a completely flat backside and without lateral distortion within the wafer surface. Key parameters in influencing the wafer chucks effective flatness are thermal performance and thermal management, roughness of the surface, choice of materials and the contact area between wafer and wafer chuck. In this presentation we would like to focus on the contact area. Usually this is decreased as much as possible to avoid sticking effects and the chance of trapped particles between the chuck surface and the backside of the wafer. This can be realized with a pin structure on the chuck surface. Making the pins smaller and moving pins further apart from each other makes the contact area ever smaller but also adds new challenges to achieve a flat and undistorted wafer on the chuck. We would like to address methods of designing and evaluating such a pin structure. This involves not only the capability to simulate the ideal pattern of pins on the chuck's surface, for which we will present 2D and 3D simulation results. As well, we would like to share first results of our functional models. Finally, measurement capability has to be ensured, which means improving and further development of Fizeau flatness test interferometers.

  9. Photoluminescence method of testing double heterostructure wafers

    SciTech Connect

    Besomi, P.R.; Wilt, D.P.

    1984-04-10

    Under photoluminescence (PL) excitation, the lateral spreading of photo-excited carriers can suppress the photoluminescence signal from double heterostructure (DH) wafers containing a p-n junction. In any DH with a p-n junction in the active layer, PL is suppressed if the power of the excitation source does not exceed a threshold value. This effect can be advantageously used for a nondestructive optical determination of the top cladding layer sheet conductance as well as p-n junction misplacement, important parameters for injection lasers and LEDs.

  10. Wafer-scale aluminum nano-plasmonics

    NASA Astrophysics Data System (ADS)

    George, Matthew C.; Nielson, Stew; Petrova, Rumyana; Frasier, James; Gardner, Eric

    2014-09-01

    The design, characterization, and optical modeling of aluminum nano-hole arrays are discussed for potential applications in surface plasmon resonance (SPR) sensing, surface-enhanced Raman scattering (SERS), and surface-enhanced fluorescence spectroscopy (SEFS). In addition, recently-commercialized work on narrow-band, cloaked wire grid polarizers composed of nano-stacked metal and dielectric layers patterned over 200 mm diameter wafers for projection display applications is reviewed. The stacked sub-wavelength nanowire grid results in a narrow-band reduction in reflectance by 1-2 orders of magnitude, which can be tuned throughout the visible spectrum for stray light control.

  11. A new dynamic tactile display for reconfigurable braille: implementation and tests

    PubMed Central

    Motto Ros, Paolo; Dante, Vittorio; Mesin, Luca; Petetti, Erminio; Del Giudice, Paolo; Pasero, Eros

    2014-01-01

    Different tactile interfaces have been proposed to represent either text (braille) or, in a few cases, tactile large-area screens as replacements for visual displays. None of the implementations so far can be customized to match users' preferences, perceptual differences and skills. Optimal choices in these respects are still debated; we approach a solution by designing a flexible device allowing the user to choose key parameters of tactile transduction. We present here a new dynamic tactile display, a 8 × 8 matrix of plastic pins based on well-established and reliable piezoelectric technology to offer high resolution (pin gap 0.7mm) as well as tunable strength of the pins displacement, and refresh rate up to 50s−1. It can reproduce arbitrary patterns, allowing it to serve the dual purpose of providing, depending on contingent user needs, tactile rendering of non-character information, and reconfigurable braille rendering. Given the relevance of the latter functionality for the expected average user, we considered testing braille encoding by volunteers a benchmark of primary importance. Tests were performed to assess the acceptance and usability with minimal training, and to check whether the offered flexibility was indeed perceived by the subject as an added value compared to conventional braille devices. Different mappings between braille dots and actual tactile pins were implemented to match user needs. Performances of eight experienced braille readers were defined as the fraction of correct identifications of rendered content. Different information contents were tested (median performance on random strings, words, sentences identification was about 75%, 85%, 98%, respectively, with a significant increase, p < 0.01), obtaining statistically significant improvements in performance during the tests (p < 0.05). Experimental results, together with qualitative ratings provided by the subjects, show a good acceptance and the effectiveness of the proposed solution

  12. Parallel implementation of the particle simulation method with dynamic load balancing: Toward realistic geodynamical simulation

    NASA Astrophysics Data System (ADS)

    Furuichi, M.; Nishiura, D.

    2015-12-01

    Fully Lagrangian methods such as Smoothed Particle Hydrodynamics (SPH) and Discrete Element Method (DEM) have been widely used to solve the continuum and particles motions in the computational geodynamics field. These mesh-free methods are suitable for the problems with the complex geometry and boundary. In addition, their Lagrangian nature allows non-diffusive advection useful for tracking history dependent properties (e.g. rheology) of the material. These potential advantages over the mesh-based methods offer effective numerical applications to the geophysical flow and tectonic processes, which are for example, tsunami with free surface and floating body, magma intrusion with fracture of rock, and shear zone pattern generation of granular deformation. In order to investigate such geodynamical problems with the particle based methods, over millions to billion particles are required for the realistic simulation. Parallel computing is therefore important for handling such huge computational cost. An efficient parallel implementation of SPH and DEM methods is however known to be difficult especially for the distributed-memory architecture. Lagrangian methods inherently show workload imbalance problem for parallelization with the fixed domain in space, because particles move around and workloads change during the simulation. Therefore dynamic load balance is key technique to perform the large scale SPH and DEM simulation. In this work, we present the parallel implementation technique of SPH and DEM method utilizing dynamic load balancing algorithms toward the high resolution simulation over large domain using the massively parallel super computer system. Our method utilizes the imbalances of the executed time of each MPI process as the nonlinear term of parallel domain decomposition and minimizes them with the Newton like iteration method. In order to perform flexible domain decomposition in space, the slice-grid algorithm is used. Numerical tests show that our

  13. Wafer-Level Membrane-Transfer Process for Fabricating MEMS

    NASA Technical Reports Server (NTRS)

    Yang, Eui-Hyeok; Wiberg, Dean

    2003-01-01

    A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

  14. Wafer level reliability testing: An idea whose time has come

    NASA Technical Reports Server (NTRS)

    Trapp, O. D.

    1987-01-01

    Wafer level reliability testing has been nurtured in the DARPA supported workshops, held each autumn since 1982. The seeds planted in 1982 have produced an active crop of very large scale integration manufacturers applying wafer level reliability test methods. Computer Aided Reliability (CAR) is a new seed being nurtured. Users are now being awakened by the huge economic value of the wafer reliability testing technology.

  15. Verification Benchmarks to Assess the Implementation of Computational Fluid Dynamics Based Hemolysis Prediction Models.

    PubMed

    Hariharan, Prasanna; D'Souza, Gavin; Horner, Marc; Malinauskas, Richard A; Myers, Matthew R

    2015-09-01

    As part of an ongoing effort to develop verification and validation (V&V) standards for using computational fluid dynamics (CFD) in the evaluation of medical devices, we have developed idealized flow-based verification benchmarks to assess the implementation of commonly cited power-law based hemolysis models in CFD. Verification process ensures that all governing equations are solved correctly and the model is free of user and numerical errors. To perform verification for power-law based hemolysis modeling, analytical solutions for the Eulerian power-law blood damage model (which estimates hemolysis index (HI) as a function of shear stress and exposure time) were obtained for Couette and inclined Couette flow models, and for Newtonian and non-Newtonian pipe flow models. Subsequently, CFD simulations of fluid flow and HI were performed using Eulerian and three different Lagrangian-based hemolysis models and compared with the analytical solutions. For all the geometries, the blood damage results from the Eulerian-based CFD simulations matched the Eulerian analytical solutions within ∼1%, which indicates successful implementation of the Eulerian hemolysis model. Agreement between the Lagrangian and Eulerian models depended upon the choice of the hemolysis power-law constants. For the commonly used values of power-law constants (α  = 1.9-2.42 and β  = 0.65-0.80), in the absence of flow acceleration, most of the Lagrangian models matched the Eulerian results within 5%. In the presence of flow acceleration (inclined Couette flow), moderate differences (∼10%) were observed between the Lagrangian and Eulerian models. This difference increased to greater than 100% as the beta exponent decreased. These simplified flow problems can be used as standard benchmarks for verifying the implementation of blood damage predictive models in commercial and open-source CFD codes. The current study only used power-law model as an illustrative example to emphasize the need

  16. Dominant factors of the laser gettering of silicon wafers

    SciTech Connect

    Bokhan, Yu. I. E-mail: yuibokhan@gmail.com; Kamenkov, V. S.; Tolochko, N. K.

    2015-02-15

    The laser gettering of silicon wafers is experimentally investigated. The typical gettering parameters are considered. The surfaces of laser-treated silicon wafers are investigated by microscopy. When studying the effect of laser radiation on silicon wafers during gettering, a group of factors determining the conditions of interaction between the laser beam and silicon-wafer surface and affecting the final result of treatment are selected. The main factors determining the gettering efficiency are revealed. Limitations on the desired value of the getter-layer capacity on surfaces with insufficiently high cleanness (for example, ground or matte) are established.

  17. Particulate contamination removal from wafers using plasmas and mechanical agitation

    DOEpatents

    Selwyn, G.S.

    1998-12-15

    Particulate contamination removal from wafers is disclosed using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer`s position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates. 4 figs.

  18. Micro-miniature gas chromatograph column disposed in silicon wafers

    DOEpatents

    Yu, Conrad M.

    2000-01-01

    A micro-miniature gas chromatograph column is fabricated by forming matching halves of a circular cross-section spiral microcapillary in two silicon wafers and then bonding the two wafers together using visual or physical alignment methods. Heating wires are deposited on the outside surfaces of each wafer in a spiral or serpentine pattern large enough in area to cover the whole microcapillary area inside the joined wafers. The visual alignment method includes etching through an alignment window in one wafer and a precision-matching alignment target in the other wafer. The two wafers are then bonded together using the window and target. The physical alignment methods include etching through vertical alignment holes in both wafers and then using pins or posts through corresponding vertical alignment holes to force precision alignment during bonding. The pins or posts may be withdrawn after curing of the bond. Once the wafers are bonded together, a solid phase of very pure silicone is injected in a solution of very pure chloroform into one end of the microcapillary. The chloroform lowers the viscosity of the silicone enough that a high pressure hypodermic needle with a thumbscrew plunger can force the solution into the whole length of the spiral microcapillary. The chloroform is then evaporated out slowly to leave the silicone behind in a deposit.

  19. The impact of wafering on organic and inorganic surface contaminations

    NASA Astrophysics Data System (ADS)

    Meyer, S.; Wahl, S.; Timmel, S.; Köpge, R.; Jang, B.-Y.

    2016-08-01

    Beside the silicon feedstock material, the crystallization process and the cell processing itself, the wafer sawing process can strongly determine the final solar cell quality. Especially surface contamination is introduced in this process step because impurities from sawing meet with a virgin silicon surface which is highly reactive until the oxide layer is formed. In this paper we quantitatively analysed both, the organic and inorganic contamination on wafer surfaces and show that changes of process parameters during wafering may cause dramatic changes in surface purity. We present powerful techniques for the monitoring of wafer surface quality which is essential for the production of high efficiency and high quality solar cells.

  20. Wafer-scale Mitochondrial Membrane Potential Assays

    PubMed Central

    Lim, Tae-Sun; Davila, Antonio; Zand, Katayoun; Douglas, Wallace C.; Burke, Peter J.

    2012-01-01

    It has been reported that mitochondrial metabolic and biophysical parameters are associated with degenerative diseases and the aging process. To evaluate these biochemical parameters, current technology requires several hundred milligrams of isolated mitochondria for functional assays. Here, we demonstrate manufacturable wafer-scale mitochondrial functional assay lab-on-a-chip devices, which require mitochondrial protein quantities three orders of magnitude less than current assays, integrated onto 4” standard silicon wafer with new fabrication processes and materials. Membrane potential changes of isolated mitochondria from various well-established cell lines such as human HeLa cell line (Heb7A), human osteosarcoma cell line (143b) and mouse skeletal muscle tissue were investigated and compared. This second generation integrated lab-on-a-chip system developed here shows enhanced structural durability and reproducibility while increasing the sensitivity to changes in mitochondrial membrane potential by an order of magnitude as compared to first generation technologies. We envision this system to be a great candidate to substitute current mitochondrial assay systems. PMID:22627274

  1. Mask qualification strategies in a wafer fab

    NASA Astrophysics Data System (ADS)

    Jaehnert, Carmen; Kunowski, Angela

    2007-02-01

    Having consistent high quality photo masks is one of the key factors in lithography in the wafer fab. Combined with stable exposure- and resist processes, it ensures yield increases in production and fast learning cycles for technology development and design evaluation. Preventive controlling of incoming masks and quality monitoring while using the mask in production is essential for the fab to avoid yield loss or technical problems caused by mask issues, which eventually result in delivery problems to the customer. In this paper an overview of the procedures used for mask qualification and production release, for both logic and DRAM, at Infineon Dresden is presented. Incoming qualification procedures, such as specification checks, incoming inspection, and inline litho process window evaluation, are described here. Pinching and electrical tests, including compatibility tests for mask copies for high volume products on optimized litho processes, are also explained. To avoid mask degradation over lifetime, re-inspection checks are done for re-qualification while using the mask in production. The necessity of mask incoming inspection and re-qualification, due to the repeater printing from either the processing defects of the original mask or degrading defects of being used in the fab (i.e. haze, ESD, and moving particles, etc.), is demonstrated. The need and impact of tight mask specifications, such as CD uniformity signatures and corresponding electrical results, are shown with examples of mask-wafer CD correlation.

  2. Capabilities and performance of the Automated Planet Finder telescope with the implementation of a dynamic scheduler

    NASA Astrophysics Data System (ADS)

    Burt, Jennifer; Holden, Bradford; Hanson, Russell; Laughlin, Greg; Vogt, Steve; Butler, Paul; Keiser, Sandy; Deich, William

    2015-10-01

    We report initial performance results emerging from 600 h of observations with the Automated Planet Finder (APF) telescope and Levy spectrometer located at UCO/Lick Observatory. We have obtained multiple spectra of 80 G, K, and M-type stars, which comprise 4954 individual Doppler radial velocity (RV) measurements with a median internal uncertainty of 1.35 ms-1. We find a strong, expected correlation between the number of photons accumulated in the 5000 to 6200 Å iodine region of the spectrum and the resulting internal uncertainty estimates. Additionally, we find an offset between the population of G and K stars and the M stars within the dataset when comparing these parameters. As a consequence of their increased spectral line densities, M-type stars permit the same level of internal uncertainty with 2× fewer photons than G-type and K-type stars. When observing M stars, we show that the APF/Levy has essentially the same speed-on-sky as Keck/high resolution echelle spectrometer (HIRES) for precision RVs. In the interest of using the APF for long-duration RV surveys, we have designed and implemented a dynamic scheduling algorithm. We discuss the operation of the scheduler, which monitors ambient conditions and combines on-sky information with a database of survey targets to make intelligent, real-time targeting decisions.

  3. Using System Dynamics to Define, Study, and Implement Smart Control Strategies on the Electric Power Grid

    SciTech Connect

    Lyle G. Roybal; Robert F Jeffers

    2013-07-01

    The United States electric power grid is the most complex and expansive control system in the world. Local generation control occurs at individual units based on response time and unit economics, larger regional control coordinates unit response to error conditions, and high level large-area regional control is ultimately administered by a network of humans guided by economic and resiliency related factors. Under normal operating conditions, the grid is a relatively slow moving entity that exhibits high inertia to outside stimuli, and behaves along repeatable diurnal and seasonal patterns. However, that paradigm is quickly changing because of the increasing implementation of renewable generation sources. Renewable generators by nature cannot be tightly controlled or scheduled. They appear like a negative load to the system with all of the variability associated with load on a larger scale. Also, grid-reactive loads (i.e. smart devices) can alter their consumption based on price or demand rules adding more variability to system behavior. This paper demonstrates how a systems dynamic modeling approach capable of operating over multiple time scales, can provide valuable insight into developing new “smart-grid” control strategies and devices needed to accommodate renewable generation and regulate the frequency of the grid.

  4. A Dynamic Era-Based Time-Symmetric Block Time-Step Algorithm with Parallel Implementations

    NASA Astrophysics Data System (ADS)

    Kaplan, Murat; Saygin, Hasan

    2012-06-01

    The time-symmetric block time-step (TSBTS) algorithm is a newly developed efficient scheme for N-body integrations. It is constructed on an era-based iteration. In this work, we re-designed the TSBTS integration scheme with a dynamically changing era size. A number of numerical tests were performed to show the importance of choosing the size of the era, especially for long-time integrations. Our second aim was to show that the TSBTS scheme is as suitable as previously known schemes for developing parallel N-body codes. In this work, we relied on a parallel scheme using the copy algorithm for the time-symmetric scheme. We implemented a hybrid of data and task parallelization for force calculation to handle load balancing problems that can appear in practice. Using the Plummer model initial conditions for different numbers of particles, we obtained the expected efficiency and speedup for a small number of particles. Although parallelization of the direct N-body codes is negatively affected by the communication/calculation ratios, we obtained good load-balanced results. Moreover, we were able to conserve the advantages of the algorithm (e.g., energy conservation for long-term simulations).

  5. Combined aerodynamic and structural dynamic problem emulating routines (CASPER): Theory and implementation

    NASA Technical Reports Server (NTRS)

    Jones, William H.

    1985-01-01

    The Combined Aerodynamic and Structural Dynamic Problem Emulating Routines (CASPER) is a collection of data-base modification computer routines that can be used to simulate Navier-Stokes flow through realistic, time-varying internal flow fields. The Navier-Stokes equation used involves calculations in all three dimensions and retains all viscous terms. The only term neglected in the current implementation is gravitation. The solution approach is of an interative, time-marching nature. Calculations are based on Lagrangian aerodynamic elements (aeroelements). It is assumed that the relationships between a particular aeroelement and its five nearest neighbor aeroelements are sufficient to make a valid simulation of Navier-Stokes flow on a small scale and that the collection of all small-scale simulations makes a valid simulation of a large-scale flow. In keeping with these assumptions, it must be noted that CASPER produces an imitation or simulation of Navier-Stokes flow rather than a strict numerical solution of the Navier-Stokes equation. CASPER is written to operate under the Parallel, Asynchronous Executive (PAX), which is described in a separate report.

  6. Using Sociocultural Perspectives: The Dynamic Process of Designing and Implementing Class Activities in an Online Japanese Language Course

    ERIC Educational Resources Information Center

    Shibakawa, Mayumi

    2012-01-01

    The study documented the dynamic process of designing and implementing instructional interventions in an online course of Japanese language and culture at a two-year college. The results have impact in three distinct areas: pedagogical, theoretical, and methodological. First, the interventions that encouraged student agency with rich…

  7. Implementation of a Research-Based Lab Module in a High School Chemistry Curriculum: A Study of Classroom Dynamics

    ERIC Educational Resources Information Center

    Pilarz, Matthew

    2013-01-01

    For this study, a research-based lab module was implemented in two high school chemistry classes for the purpose of examining classroom dynamics throughout the process of students completing the module. A research-based lab module developed for use in undergraduate laboratories by the Center for Authentic Science Practice in Education (CASPiE) was…

  8. Implementation of window shading models into dynamic whole-building simulation

    NASA Astrophysics Data System (ADS)

    Lomanowski, Bartosz Aleksander

    resistances of sealed cavities between glazing/shading layers are calculated at each time-step for various fill gases and mixtures. In addition to modeling glazing/shading layer combinations, the CFC type also provides an alternate method of modeling unshaded windows without relying on third party software to supply the solar optics and cavity resistances. To build confidence in the CFC code implementation, two comparison studies were carried out to compare the CFC type against other models. The first study compared the CFC models for unshaded windows with the standard ESP-r transparent multi-layer construction (TMC) models. The second study compared the CFC slat-type blind models with EnergyPlus 2.0. Good agreement was seen in the simulation results in both studies. The successful implementation of the Complex Fenestration Construction within ESP-r has been demonstrated in the current research. In order for ESP-r users to fully exploit the capabilities of the CFC framework, it is recommended that the current models be extended to include a facility for dynamic shading control as well as the treatment of other types of shading layers. The coupling of daylighting models with the CFC type would provide a useful tool for modeling luminance control in combination with shading control strategies. With these enhancements, it is anticipated that the CFC implementation will be of significant value to practitioners.

  9. Photolithography diagnostic expert systems: a systematic approach to problem solving in a wafer fabrication facility

    NASA Astrophysics Data System (ADS)

    Weatherwax Scott, Caroline; Tsareff, Christopher R.

    1990-06-01

    One of the main goals of process engineering in the semiconductor industry is to improve wafer fabrication productivity and throughput. Engineers must work continuously toward this goal in addition to performing sustaining and development tasks. To accomplish these objectives, managers must make efficient use of engineering resources. One of the tools being used to improve efficiency is the diagnostic expert system. Expert systems are knowledge based computer programs designed to lead the user through the analysis and solution of a problem. Several photolithography diagnostic expert systems have been implemented at the Hughes Technology Center to provide a systematic approach to process problem solving. This systematic approach was achieved by documenting cause and effect analyses for a wide variety of processing problems. This knowledge was organized in the form of IF-THEN rules, a common structure for knowledge representation in expert system technology. These rules form the knowledge base of the expert system which is stored in the computer. The systems also include the problem solving methodology used by the expert when addressing a problem in his area of expertise. Operators now use the expert systems to solve many process problems without engineering assistance. The systems also facilitate the collection of appropriate data to assist engineering in solving unanticipated problems. Currently, several expert systems have been implemented to cover all aspects of the photolithography process. The systems, which have been in use for over a year, include wafer surface preparation (HMDS), photoresist coat and softbake, align and expose on a wafer stepper, and develop inspection. These systems are part of a plan to implement an expert system diagnostic environment throughout the wafer fabrication facility. In this paper, the systems' construction is described, including knowledge acquisition, rule construction, knowledge refinement, testing, and evaluation. The roles

  10. 1366 Direct Wafer: Demolishing the Cost Barrier for Silicon Photovoltaics

    SciTech Connect

    Lorenz, Adam

    2013-08-30

    The goal of 1366 Direct Wafer™ is to drastically reduce the cost of silicon-based PV by eliminating the cost barrier imposed by sawn wafers. The key characteristics of Direct Wafer are 1) kerf-free, 156-mm standard silicon wafers 2) high throughput for very low CAPEX and rapid scale up. Together, these characteristics will allow Direct Wafer™ to become the new standard for silicon PV wafers and will enable terawatt-scale PV – a prospect that may not be possible with sawn wafers. Our single, high-throughput step will replace the expensive and rate-limiting process steps of ingot casting and sawing, thereby enabling drastically lower wafer cost. This High-Impact PV Supply Chain project addressed the challenges of scaling Direct Wafer technology for cost-effective, high-throughput production of commercially viable 156 mm wafers. The Direct Wafer process is inherently simple and offers the potential for very low production cost, but to realize this, it is necessary to demonstrate production of wafers at high-throughput that meet customer specifications. At the start of the program, 1366 had demonstrated (with ARPA-E funding) increases in solar cell efficiency from 10% to 15.9% on small area (20cm2), scaling wafer size up to the industry standard 156mm, and demonstrated initial cell efficiency on larger wafers of 13.5%. During this program, the throughput of the Direct Wafer furnace was increased by more than 10X, simultaneous with quality improvements to meet early customer specifications. Dedicated equipment for laser trimming of wafers and measurement methods were developed to feedback key quality metrics to improve the process and equipment. Subsequent operations served both to determine key operating metrics affecting cost, as well as generating sample product that was used for developing downstream processing including texture and interaction with standard cell processing. Dramatic price drops for silicon wafers raised the bar significantly, but the

  11. A molecular dynamics implementation of the 3D Mercedes-Benz water model

    NASA Astrophysics Data System (ADS)

    Hynninen, T.; Dias, C. L.; Mkrtchyan, A.; Heinonen, V.; Karttunen, M.; Foster, A. S.; Ala-Nissila, T.

    2012-02-01

    The three-dimensional Mercedes-Benz model was recently introduced to account for the structural and thermodynamic properties of water. It treats water molecules as point-like particles with four dangling bonds in tetrahedral coordination, representing H-bonds of water. Its conceptual simplicity renders the model attractive in studies where complex behaviors emerge from H-bond interactions in water, e.g., the hydrophobic effect. A molecular dynamics (MD) implementation of the model is non-trivial and we outline here the mathematical framework of its force-field. Useful routines written in modern Fortran are also provided. This open source code is free and can easily be modified to account for different physical context. The provided code allows both serial and MPI-parallelized execution. Program summaryProgram title: CASHEW (Coarse Approach Simulator for Hydrogen-bonding Effects in Water) Catalogue identifier: AEKM_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEKM_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 20 501 No. of bytes in distributed program, including test data, etc.: 551 044 Distribution format: tar.gz Programming language: Fortran 90 Computer: Program has been tested on desktop workstations and a Cray XT4/XT5 supercomputer. Operating system: Linux, Unix, OS X Has the code been vectorized or parallelized?: The code has been parallelized using MPI. RAM: Depends on size of system, about 5 MB for 1500 molecules. Classification: 7.7 External routines: A random number generator, Mersenne Twister ( http://www.math.sci.hiroshima-u.ac.jp/m-mat/MT/VERSIONS/FORTRAN/mt95.f90), is used. A copy of the code is included in the distribution. Nature of problem: Molecular dynamics simulation of a new geometric water model. Solution method: New force-field for

  12. Eutectic bonds on wafer scale by thin film multilayers

    NASA Astrophysics Data System (ADS)

    Christensen, Carsten; Bouwstra, Siebe

    1996-09-01

    The use of gold based thin film multilayer systems for forming eutectic bonds on wafer scale is investigated and preliminary results will be presented. On polished 4 inch wafers different multilayer systems are developed using thin film techniques and bonded afterwards under reactive atmospheres and different bonding temperatures and forces. Pull tests are performed to extract the bonding strengths.

  13. Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

    PubMed Central

    Thomson, Stephen R. D.; Perron, Justin K.; Kimball, Mark O.; Mehta, Sarabjit; Gasparini, Francis M.

    2014-01-01

    Measurements of the heat capacity and superfluid fraction of confined 4He have been performed near the lambda transition using lithographically patterned and bonded silicon wafers. Unlike confinements in porous materials often used for these types of experiments3, bonded wafers provide predesigned uniform spaces for confinement. The geometry of each cell is well known, which removes a large source of ambiguity in the interpretation of data. Exceptionally flat, 5 cm diameter, 375 µm thick Si wafers with about 1 µm variation over the entire wafer can be obtained commercially (from Semiconductor Processing Company, for example). Thermal oxide is grown on the wafers to define the confinement dimension in the z-direction. A pattern is then etched in the oxide using lithographic techniques so as to create a desired enclosure upon bonding. A hole is drilled in one of the wafers (the top) to allow for the introduction of the liquid to be measured. The wafers are cleaned2 in RCA solutions and then put in a microclean chamber where they are rinsed with deionized water4. The wafers are bonded at RT and then annealed at ~1,100 °C. This forms a strong and permanent bond. This process can be used to make uniform enclosures for measuring thermal and hydrodynamic properties of confined liquids from the nanometer to the micrometer scale. PMID:24457563

  14. Analysis of wafer heating in 14nm DUV layers

    NASA Astrophysics Data System (ADS)

    Subramany, Lokesh; Chung, Woong Jae; Samudrala, Pavan; Gao, Haiyong; Aung, Nyan; Gomez, Juan Manuel; Minghetti, Blandine; Lee, Shawn

    2016-03-01

    To further shrink the contact and trench dimensions, Negative Tone Development (NTD) has become the de facto process at these layers. The NTD process uses a positive tone resist and an organic solvent-based negative tone developer which leads to improved image contrast, larger process window and smaller Mask Error Enhancement Factor (MEEF)[1]. The NTD masks have high transmission values leading to lens heating and as observed here wafer heating as well. Both lens and wafer heating will contribute to overlay error, however the effects of lens heating can be mitigated by applying lens heating corrections while no such corrections exist for wafer heating yet. Although the magnitude of overlay error due to wafer heating is low relative to lens heating; ever tightening overlay requirements imply that the distortions due to wafer heating will quickly become a significant part of the overlay budget. In this work the effects, analysis and observations of wafer heating on contact and metal layers of the 14nm node are presented. On product wafers it manifests as a difference in the scan up and scan down signatures between layers. An experiment to further understand wafer heating is performed with a test reticle that is used to monitor scanner performance.

  15. Particulate contamination removal from wafers using plasmas and mechanical agitation

    DOEpatents

    Selwyn, Gary S.

    1998-01-01

    Particulate contamination removal from wafers using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer's position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates.

  16. Piezoresistive stress sensors on (110) silicon wafers

    NASA Technical Reports Server (NTRS)

    Kang, Y. L.; Suhling, J. C.; Jaeger, R. C.

    1992-01-01

    Structural reliability of electronic packages has become an increasing concern for a variety of reasons including the advent of higher integrated circuit densities, power density levels, and operating temperatures. A powerful method for experimental evaluation of die stress distributions is the use of test chips incorporating integral piezoresistive sensors. In this paper, the basic equations needed for the design of stress sensors fabricated on the surface of (110) oriented silicon wafers have been presented. Several sensor rosette configurations have been explored, including the familiar three-element 0-45-90 rosette. Rosette designs have been found which minimize the necessary calibration procedures and permit more stress components to be measured. It has been established that stress sensors on the surface of (110) test chips are sensitive to four out of the six stress components at a point.

  17. Wafer Mapping Using Deuterium Enhanced Defect Characterization

    NASA Astrophysics Data System (ADS)

    Hossain, K.; Holland, O. W.; Hellmer, R.; Vanmil, B.; Bubulac, L. O.; Golding, T. D.

    2010-07-01

    Deuterium (as well as other hydrogen isotopes) binds with a wide range of morphological defects in semiconductors and, as such, becomes distributed similarly to those defects. Thus, the deuterium profile within the sample serves as the basis of a technique for defect mapping known as amethyst wafer mapping (AWM). The efficiency of this technique has been demonstrated by evaluation of ion-induced damage in implanted Si, as well as as-grown defects in HgCdTe (MCT) epilayers. The defect tagging or decoration capability of deuterium is largely material independent and applicable to a wide range of defect morphologies. A number of analytical techniques including ion channeling and etch pit density measurements were used to evaluate the AWM results.

  18. Implementation of Speed Variation in the Structural Dynamic Assessment of Turbomachinery Flow-Path Components

    NASA Technical Reports Server (NTRS)

    Brown, Andrew M.; Davis, R. Benjamin; DeHaye, Michael K.

    2013-01-01

    During the design of turbomachinery flow path components, the assessment of possible structural resonant conditions is critical. Higher frequency modes of these structures are frequently found to be subject to resonance, and in these cases, design criteria require a forced response analysis of the structure with the assumption that the excitation speed exactly equals the resonant frequency. The design becomes problematic if the response analysis shows a violation of the HCF criteria. One possible solution is to perform "finite-life" analysis, where Miner's rule is used to calculate the actual life in seconds in comparison to the required life. In this situation, it is beneficial to incorporate the fact that, for a variety of turbomachinery control reasons, the speed of the rotor does not actually dwell at a single value but instead dithers about a nominal mean speed and during the time that the excitation frequency is not equal to the resonant frequency, the damage accumulated by the structure is diminished significantly. Building on previous investigations into this process, we show that a steady-state assumption of the response is extremely accurate for this typical case, resulting in the ability to quickly account for speed variation in the finite-life analysis of a component which has previously had its peak dynamic stress at resonance calculated. A technique using Monte Carlo simulation is also presented which can be used when specific speed time histories are not available. The implementation of these techniques can prove critical for successful turbopump design, as the improvement in life when speed variation is considered is shown to be greater than a factor of two.

  19. Implementation of Speed Variation in the Structural Dynamic Assessment of Turbomachinery Flow-Path Components

    NASA Technical Reports Server (NTRS)

    Brown, Andrew M.; Davis, R. Benjamin; DeHaye, Michael

    2013-01-01

    During the design of turbomachinery flow path components, the assessment of possible structural resonant conditions is critical. Higher frequency modes of these structures are frequently found to be subject to resonance, and in these cases, design criteria require a forced response analysis of the structure with the assumption that the excitation speed exactly equals the resonant frequency. The design becomes problematic if the response analysis shows a violation of the HCF criteria. One possible solution is to perform "finite-life" analysis, where Miner's rule is used to calculate the actual life in seconds in comparison to the required life. In this situation, it is beneficial to incorporate the fact that, for a variety of turbomachinery control reasons, the speed of the rotor does not actually dwell at a single value but instead dithers about a nominal mean speed and during the time that the excitation frequency is not equal to the resonant frequency, the damage accumulated by the structure is diminished significantly. Building on previous investigations into this process, we show that a steady-state assumption of the response is extremely accurate for this typical case, resulting in the ability to quickly account for speed variation in the finite-life analysis of a component which has previously had its peak dynamic stress at resonance calculated. A technique using Monte Carlo simulation is also presented which can be used when specific speed time histories are not available. The implementation of these techniques can prove critical for successful turbopump design, as the improvement in life when speed variation is considered is shown to be greater than a factor of two

  20. Electron arc therapy: design, implementation and evaluation of a dynamic multi-vane collimator system.

    PubMed

    Leavitt, D D; Stewart, J R; Moeller, J H; Lee, W L; Takach, G A

    1989-11-01

    Innovative techniques in motion control technology have been applied to the design and implementation of a portable computer-controlled multi-vane collimator for use in electron arc therapy. The collimator, consisting of 18 independently controlled vanes, is inserted into the standard accessory mount assembly of a linear accelerator, in the same fashion as standard field shaping blocks. Power is supplied to the collimator vane motors via a self-contained battery system. The range of motion of the vanes, symmetrically mounted nine on each side, provides a variable aperture width projected to isocenter of 2 cm minimum to 8 cm maximum. The projected length of the aperture at isocenter is 38 cm. The transition time between vane positions is less than 1 second, corresponding to gantry movement of less than 1 degree. The movement of each of the 18 vanes is monitored and controlled by six individually addressed three axis processors that are shielded from the electron beam. A table of collimator vane positions versus gantry angle, as determined by dose optimization calculations, is stored in a data file. The desired collimator vane position corresponding to the current arc segment is conveyed from the control console to each vane controller via packets within a token passing network. Communication between the computer in the console area and the vane controllers is accomplished through encoded infra-red pulse transmission, eliminating the need for additional communication lines between the console and the accelerator. This dynamic collimator offers improved dose uniformity while simplifying the delivery of electron arc therapy. PMID:2808043

  1. Overlay Tolerances For VLSI Using Wafer Steppers

    NASA Astrophysics Data System (ADS)

    Levinson, Harry J.; Rice, Rory

    1988-01-01

    In order for VLSI circuits to function properly, the masking layers used in the fabrication of those devices must overlay each other to within the manufacturing tolerance incorporated in the circuit design. The capabilities of the alignment tools used in the masking process determine the overlay tolerances to which circuits can be designed. It is therefore of considerable importance that these capabilities be well characterized. Underestimation of the overlay accuracy results in unnecessarily large devices, resulting in poor utilization of wafer area and possible degradation of device performance. Overestimation will result in significant yield loss because of the failure to conform to the tolerances of the design rules. The proper methodology for determining the overlay capabilities of wafer steppers, the most commonly used alignment tool for the production of VLSI circuits, is the subject of this paper. Because cost-effective manufacturing process technology has been the driving force of VLSI, the impact on productivity is a primary consideration in all discussions. Manufacturers of alignment tools advertise the capabilities of their equipment. It is notable that no manufacturer currently characterizes his aligners in a manner consistent with the requirements of producing very large integrated circuits, as will be discussed. This has resulted in the situation in which the evaluation and comparison of the capabilities of alignment tools require the attention of a lithography specialist. Unfortunately, lithographic capabilities must be known by many other people, particularly the circuit designers and the managers responsible for the financial consequences of the high prices of modern alignment tools. All too frequently, the designer or manager is confronted with contradictory data, one set coming from his lithography specialist, and the other coming from a sales representative of an equipment manufacturer. Since the latter generally attempts to make his

  2. Multiagent Systems Based Modeling and Implementation of Dynamic Energy Management of Smart Microgrid Using MACSimJX

    PubMed Central

    Raju, Leo; Milton, R. S.; Mahadevan, Senthilkumaran

    2016-01-01

    The objective of this paper is implementation of multiagent system (MAS) for the advanced distributed energy management and demand side management of a solar microgrid. Initially, Java agent development environment (JADE) frame work is used to implement MAS based dynamic energy management of solar microgrid. Due to unstable nature of MATLAB, when dealing with multithreading environment, MAS operating in JADE is linked with the MATLAB using a middle ware called Multiagent Control Using Simulink with Jade Extension (MACSimJX). MACSimJX allows the solar microgrid components designed with MATLAB to be controlled by the corresponding agents of MAS. The microgrid environment variables are captured through sensors and given to agents through MATLAB/Simulink and after the agent operations in JADE, the results are given to the actuators through MATLAB for the implementation of dynamic operation in solar microgrid. MAS operating in JADE maximizes operational efficiency of solar microgrid by decentralized approach and increase in runtime efficiency due to JADE. Autonomous demand side management is implemented for optimizing the power exchange between main grid and microgrid with intermittent nature of solar power, randomness of load, and variation of noncritical load and grid price. These dynamics are considered for every time step and complex environment simulation is designed to emulate the distributed microgrid operations and evaluate the impact of agent operations. PMID:27127802

  3. Multiagent Systems Based Modeling and Implementation of Dynamic Energy Management of Smart Microgrid Using MACSimJX.

    PubMed

    Raju, Leo; Milton, R S; Mahadevan, Senthilkumaran

    2016-01-01

    The objective of this paper is implementation of multiagent system (MAS) for the advanced distributed energy management and demand side management of a solar microgrid. Initially, Java agent development environment (JADE) frame work is used to implement MAS based dynamic energy management of solar microgrid. Due to unstable nature of MATLAB, when dealing with multithreading environment, MAS operating in JADE is linked with the MATLAB using a middle ware called Multiagent Control Using Simulink with Jade Extension (MACSimJX). MACSimJX allows the solar microgrid components designed with MATLAB to be controlled by the corresponding agents of MAS. The microgrid environment variables are captured through sensors and given to agents through MATLAB/Simulink and after the agent operations in JADE, the results are given to the actuators through MATLAB for the implementation of dynamic operation in solar microgrid. MAS operating in JADE maximizes operational efficiency of solar microgrid by decentralized approach and increase in runtime efficiency due to JADE. Autonomous demand side management is implemented for optimizing the power exchange between main grid and microgrid with intermittent nature of solar power, randomness of load, and variation of noncritical load and grid price. These dynamics are considered for every time step and complex environment simulation is designed to emulate the distributed microgrid operations and evaluate the impact of agent operations. PMID:27127802

  4. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

    NASA Astrophysics Data System (ADS)

    Cunning, Benjamin V.; Ahmed, Mohsin; Mishra, Neeraj; Ranjbar Kermany, Atieh; Wood, Barry; Iacopi, Francesca

    2014-08-01

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

  5. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers.

    PubMed

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Wood, Barry; Iacopi, Francesca

    2014-08-15

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. PMID:25053702

  6. Reduction of Thermal Conductivity in Wafer-Bonded Silicon

    SciTech Connect

    ZL Liau; LR Danielson; PM Fourspring; L Hu; G Chen; GW Turner

    2006-11-27

    Blocks of silicon up to 3-mm thick have been formed by directly bonding stacks of thin wafer chips. These stacks showed significant reductions in the thermal conductivity in the bonding direction. In each sample, the wafer chips were obtained by polishing a commercial wafer to as thin as 36 {micro}m, followed by dicing. Stacks whose starting wafers were patterned with shallow dots showed greater reductions in thermal conductivity. Diluted-HF treatment of wafer chips prior to bonding led to the largest reduction of the effective thermal conductivity, by approximately a factor of 50. Theoretical modeling based on restricted conduction through the contacting dots and some conduction across the planar nanometer air gaps yielded fair agreement for samples fabricated without the HF treatment.

  7. Backside EBR process performance with various wafer properties

    NASA Astrophysics Data System (ADS)

    Goto, Tomohiro; Shigemori, Kazuhito; Vangheluwe, Rik; Erich, Daub; Sanada, Masakazu

    2009-03-01

    In immersion lithography process, film stacking architecture will be necessary to avoid top coat film peeling. To achieve suitable stacking architecture for immersion lithography process, an EBR process that delivers tightly controlled film edge position and good uniformity around the wafer circumference is needed. We demonstrated a new bevel rinse system on a SOKUDO RF3 coat-and-develop track for immersion lithography. The performance of the new bevel rinse system for various wafer properties was evaluated. It was found that the bevel rinse system has a good controllability of film edge position and good uniformity around the wafer circumference. The results indicate that the bevel rinse system has a large margin for wafer centering accuracy, back side particles, wafer shape and substrates with good film edge position controllability, uniformity and clean apex. The system has been demonstrated to provide a suitable film stacking architecture for immersion lithography mass production process.

  8. Interferometric metrology of wafer nanotopography for advanced CMOS process integration

    NASA Astrophysics Data System (ADS)

    Valley, John F.; Koliopoulos, Chris L.; Tang, Shouhong

    2001-12-01

    According to industry standards (SEMI M43, Guide for Reporting Wafer Nanotopography), Nanotopography is the non- planar deviation of the whole front wafer surface within a spatial wavelength range of approximately 0.2 to 20 mm and within the fixed quality area (FQA). The need for precision metrology of wafer nanotopography is being actively addressed by interferometric technology. In this paper we present an approach to mapping the whole wafer front surface nanotopography using an engineered coherence interferometer. The interferometer acquires a whole wafer raw topography map. The raw map is then filtered to remove the long spatial wavelength, high amplitude shape contributions and reveal the nanotopography in the filtered map. Filtered maps can be quantitatively analyzed in a variety of ways to enable statistical process control (SPC) of nanotopography parameters. The importance of tracking these parameters for CMOS gate level processes at 180-nm critical dimension, and below, is examined.

  9. Rapid defect detections of bonded wafer using near infrared polariscope

    NASA Astrophysics Data System (ADS)

    Ng, Chi Seng; Asundi, Anand K.

    2011-10-01

    In modern field of microelectronics and MEMS, wafer bonding has emerged as an important processing step in wide range of manufacturing applications. During the manufacturing process, even in the modern clean room, small defects result from trapped particles and gas bubbles exist at bonded interface. Defects and trapped particles may exist on the top and bottom of the wafers, or at the interface of bonded wafer pair. These inclusions will generate high stress around debond region at the wafers bonded interface. In this paper, inspection at the bonded interface will be the interest of investigation. Since silicon wafer is opaque to visible light, defect detection at the bonded interface of silicon wafer is not possible. Due to the fact that silicon wafer is transparent to wavelength greater than 1150nm, an Near Infrared Polariscope which has showed some promises on residual stress measurement on silicon devices has been adapted and developed. This method is based on the well known photoelastic principles, where the stress variations are measured based on the changes of light propagation velocity in birefringence material. The results are compared and contrast with conventional Infrared Transmission Imaging tool (IRT) which is widely used to inspect the bonded silicon wafer. In this research, the trapped particles that are not visible via conventional infrared transmission method are identified via the generated residual stress pattern. The magnitude of the residual stress fields associated with each defect is examined qualitatively and quantitatively. The stress field generated at the wafers bonded interface will looks like a 'butterfly' pattern. Wafer pairs Pyrex-Si and Si-Si bonded interface will be examined.

  10. Implementation of the SCC-DFTB Method for Hybrid QM/MM Simulations within the Amber Molecular Dynamics Package

    PubMed Central

    de M. Seabra, Gustavo; Walker, Ross C.; Elstner, Marcus; Case, David A.; Roitberg, Adrian E.

    2011-01-01

    Self-Consistent Charge Density Functional Tight Binding (SCC-DFTB) is a semi-empirical method based on Density Functional Theory, and has in many cases been shown to provide relative energies and geometries comparable in accuracy to full DFT or ab-initio MP2 calculations using large basis sets. This article shows an implementation of the SCC-DFTB method as part of the new QM/MM support in the AMBER 9 molecular dynamics program suite. Details of the implementation and examples of applications are shown. PMID:17521173

  11. Recent progress in wafer-fused VECSELs emitting in the 1310nm waveband

    NASA Astrophysics Data System (ADS)

    Sirbu, A.; Rantamaki, A.; Iakovlev, V.; Mereuta, A.; Caliman, A.; Volet, N.; Lyytikäinen, J.; Okhotnikov, O.; Kapon, E.

    2015-03-01

    Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.

  12. Measurement of small angle based on a (1 0 0) silicon wafer and heterodyne interferometer

    NASA Astrophysics Data System (ADS)

    Hsieh, Meng-Chang; Lin, Jiun-You; Chen, Yu-Fong; Chang, Chia-Ou

    2016-06-01

    In this paper, a new optical material application and a heterodyne interferometer are proposed for measuring small angles. In the proposed interferometer, the optical material is a (1 0 0) silicon wafer applied to compose a new architecture of small angle sensor. The small angle measurement used the phase difference which is dependent on the incident angle at the silicon wafer surface to deduce the angular variation. The proposed architecture is simple and uses the common path method to compare test and reference signals; thus, small angles can be easily and accurately measured by estimating the phase difference. The experimental results demonstrate the feasibility of this method. The angular resolution and sensitivity levels superior to 7 × 10-5° (1.3 × 10-6 rad) and 150 (deg/deg), respectively, were attainable in a dynamic range of 0.45°.

  13. The Dynamics of Implementing and Sustaining Standards-Based Mathematics Curricula in Middle Schools.

    ERIC Educational Resources Information Center

    Bay, Jennifer M.

    This study examined both district-level and teacher-level considerations in the implementation of standards-based middle school mathematics curriculum. In particular, the following questions were addressed: (1) What district-level constraints and considerations impact decisions regarding implementation of a standards-based middle school…

  14. Development of optical automatic positioning and wafer defect detection system

    NASA Astrophysics Data System (ADS)

    Tien, Chuen-Lin; Lai, Qun-Huang; Lin, Chern-Sheng

    2016-02-01

    The data of a wafer with defects can provide engineers with very important information and clues to improve the yield rate and quality in manufacturing. This paper presents a microscope automatic positioning and wafer detection system with human-machine interface based on image processing and fuzzy inference algorithms. In the proposed system, a XY table is used to move the position of each die on 6 inch or 8 inch wafers. Then, a high-resolution CCD and one set of two-axis optical linear encoder are used to accurately measure the position on the wafer. Finally, the developed human-machine interface is used to display the current position of an actual wafer in order to complete automatic positioning, and a wafer map database can be created. In the process of defect detection, CCD is used for image processing, and during preprocessing, it is required to filter noise, acquire the defect characteristics, define the defective template, and then take the characteristic points of the defective template as the reference input for fuzzy inference. A high-accuracy optical automatic positioning and wafer defect detection system is thus constructed. This study focused on automatic detection of spots, scratches, and bruises, and attempted to reduce the time to detect defective die and improve the accuracy of determining the defects of semiconductor devices.

  15. Multifunctional medicated lyophilised wafer dressing for effective chronic wound healing.

    PubMed

    Pawar, Harshavardhan V; Boateng, Joshua S; Ayensu, Isaac; Tetteh, John

    2014-06-01

    Wafers combining weight ratios of Polyox with carrageenan (75/25) or sodium alginate (50/50) containing streptomycin and diclofenac were prepared to improve chronic wound healing. Gels were freeze-dried using a lyophilisation cycle incorporating an annealing step. Wafers were characterised for morphology, mechanical and in vitro functional (swelling, adhesion, drug release in the presence of simulated wound fluid) characteristics. Both blank (BLK) and drug-loaded (DL) wafers were soft, flexible, elegant in appearance and non-brittle in nature. Annealing helped to improve porous nature of wafers but was affected by the addition of drugs. Mechanical characterisation demonstrated that the wafers were strong enough to withstand normal stresses but also flexible to prevent damage to newly formed skin tissue. Differences in swelling, adhesion and drug release characteristics could be attributed to differences in pore size and sodium sulphate formed because of the salt forms of the two drugs. BLK wafers showed relatively higher swelling and adhesion than DL wafers with the latter showing controlled release of streptomycin and diclofenac. The optimised dressing has the potential to reduce bacterial infection and can also help to reduce swelling and pain associated with injury due to the anti-inflammatory action of diclofenac and help to achieve more rapid wound healing. PMID:24700434

  16. Techniques for the evaluation of outgassing from polymeric wafer pods

    SciTech Connect

    McIntyre, D.C.; Liang, A.; Thornberg, S.M.; Bender, S.F.; Lujan, R.D.; Blewer, R.S.; Bowers, W.D.

    1994-03-01

    In recent years there has been increasing interest in using wafer-level isolation environments or pods (microenvironments) to provide a more controllable, cleaner wafer environment during wafer processing. It has been shown that pods can be effective in reducing the amount of particulate contamination on wafers during manufacturing. However, there have also been studies that indicate that pods and wafer boxes can be the source of condensible, molecular organic contamination. This paper summarizes the work that has been performed during the past year at Sandia National Laboratories` Contamination Free Manufacturing Research Center (CFMRC) on (1) devising standard, low-temperature, high sensitivity techniques to detect outgassing of volatile organic compounds (VOCs) from polymers used to construct wafer pods and (2) development of a technique that can be used to continuously measure the condensible contamination within pods so that the pod environment can be monitored during manufacturing. Although these techniques have been developed specifically for assessing contamination threats from wafer pods, they can be used to evaluate other potential contamination sources. The high sensitivity outgassing techniques can be used to evaluate outgassing of volatiles from other clean-room materials and the real-time outgassing sensor can be used to monitor contamination condensation in non-pod environments such as ballroom-type cleanrooms and minienvironments.

  17. A study on wafer level vacuum packaging for MEMS devices

    NASA Astrophysics Data System (ADS)

    Lee, Byeungleul; Seok, Seonho; Chun, Kukjin

    2003-09-01

    A new vacuum packaging process at the wafer level is developed for the surface micromachining devices using glass-silicon anodic bonding technology. The rim for the glass-silicon bonding process which is needed to prevent vacuum leakage is built up simultaneously as the structure is being etched. The mechanical resonator is used as a tool for evaluating the vacuum level of the packaging. The inside pressure of the packaged device was measured indirectly by measuring the quality factor of the mechanical resonator. The measured Q factor was about 5 × 104 and the estimated inner pressure was about 1 mTorr. It is also possible to change the inside pressure of the packaged devices from 2 Torr to 1 mTorr by varying the amount of Ti getter material. The yield of the vacuum packaging process is about 80% and vacuum degradation was not observed after 1000 h had passed. The developed vacuum packaging process is also applied to resonant accelerometers which need a high vacuum environment to implement higher performance.

  18. Surface quality of silicon wafer improved by hydrodynamic effect polishing

    NASA Astrophysics Data System (ADS)

    Peng, Wenqiang; Guan, Chaoliang; Li, Shengyi

    2014-08-01

    Differing from the traditional pad polishing, hydrodynamic effect polishing (HEP) is non-contact polishing with the wheel floated on the workpiece. A hydrodynamic lubricated film is established between the wheel and the workpiece when the wheel rotates at a certain speed in HEP. Nanoparticles mixed with deionized water are employed as the polishing slurry, and with action of the dynamic pressure, nanoparticles with high chemisorption due to the high specific surface area can easily reacted with the surface atoms forming a linkage with workpiece surface. The surface atoms are dragged away when nanoparticles are transported to separate by the flow shear stress. The development of grand scale integration put extremely high requirements on the surface quality on the silicon wafer with surface roughness at subnanometer and extremely low surface damage. In our experiment a silicon sample was processed by HEP, and the surface topography before and after polishing was observed by the atomic force microscopy. Experiment results show that plastic pits and bumpy structures on the initial surface have been removed away clearly with the removal depth of 140nm by HEP process. The processed surface roughness has been improved from 0.737nm RMS to 0.175nm RMS(10μm×10μm) and the section profile shows peaks of the process surface are almost at the same height. However, the machining ripples on the wheel surface will duplicate on the silicon surface under the action of the hydrodynamic effect. Fluid dynamic simulation demonstrated that the coarse surface on the wheel has greatly influence on the distribution of shear stress and dynamic pressure on the workpiece surface.

  19. The uses of Man-Made diamond in wafering applications

    NASA Technical Reports Server (NTRS)

    Fallon, D. B.

    1982-01-01

    The continuing, rapid growth of the semiconductor industry requires the involvement of several specialized industries in the development of special products geared toward the unique requirements of this new industry. A specialized manufactured diamond to meet various material removal needs was discussed. The area of silicon wafer slicing has presented yet anothr challenge and it is met most effectively. The history, operation, and performance of Man-Made diamond and particularly as applied to silicon wafer slicing is discussed. Product development is underway to come up with a diamond specifically for sawing silicon wafers on an electroplated blade.

  20. Ulnar Impaction Syndrome: Ulnar Shortening vs. Arthroscopic Wafer Procedure

    PubMed Central

    Smet, Luc De; Vandenberghe, Lore; Degreef, Ilse

    2014-01-01

    The outcome of ulnar shortenings was compared with that of arthroscopic wafer resections for ulnar impaction (or abutment) syndrome in patients with a positive ulnar variance. The outcome was measured by DASH score, visual analog scale for pain, and working incapacity. The mean DASH score in the ulnar shortening group was 26; in the wafer group it was 36. The VAS scores were respectively 4.4 and 4.6. The working incapacity was 7?months in the ulnar shortening group and 6.1 months in the wafer group. The differences between the two groups were not statistically significant. PMID:25032075

  1. Wafer warpage characterization measurement with modified fringe reflection method

    NASA Astrophysics Data System (ADS)

    Chang, Po-Yi; Ku, Yi-Sha

    2015-05-01

    We have demonstrated a modified fringe reflection method to compensate the warpage measurement errors caused by the height difference between optical reference mirror and wafer sample surface. We have used a linearity analysis approach to obtain the parabolic height errors for a 4-inch sapphire wafer warpage measurement, which is around 1.48 μm of 100 μm height difference. The experimental results shows the warp discrepancy of 6-inch sapphire wafer is less than 1 μm compared with the reference Tropel instrument.

  2. Identification of continuous-time dynamical systems: Neural network based algorithms and parallel implementation

    SciTech Connect

    Farber, R.M.; Lapedes, A.S.; Rico-Martinez, R.; Kevrekidis, I.G.

    1993-06-01

    Time-delay mappings constructed using neural networks have proven successful performing nonlinear system identification; however, because of their discrete nature, their use in bifurcation analysis of continuous-tune systems is limited. This shortcoming can be avoided by embedding the neural networks in a training algorithm that mimics a numerical integrator. Both explicit and implicit integrators can be used. The former case is based on repeated evaluations of the network in a feedforward implementation; the latter relies on a recurrent network implementation. Here the algorithms and their implementation on parallel machines (SIMD and MIMD architectures) are discussed.

  3. Identification of continuous-time dynamical systems: Neural network based algorithms and parallel implementation

    SciTech Connect

    Farber, R.M.; Lapedes, A.S. ); Rico-Martinez, R.; Kevrekidis, I.G. . Dept. of Chemical Engineering)

    1993-01-01

    Time-delay mappings constructed using neural networks have proven successful performing nonlinear system identification; however, because of their discrete nature, their use in bifurcation analysis of continuous-tune systems is limited. This shortcoming can be avoided by embedding the neural networks in a training algorithm that mimics a numerical integrator. Both explicit and implicit integrators can be used. The former case is based on repeated evaluations of the network in a feedforward implementation; the latter relies on a recurrent network implementation. Here the algorithms and their implementation on parallel machines (SIMD and MIMD architectures) are discussed.

  4. Low-temperature full wafer adhesive bonding

    NASA Astrophysics Data System (ADS)

    Niklaus, Frank; Enoksson, Peter; Kälvesten, Edvard; Stemme, Göran

    2001-03-01

    We have systematically investigated the influence of different bonding parameters on void formation in a low-temperature adhesive bonding process. As a result of these studies we present guidelines for void free adhesive bonding of 10 cm diameter wafers. We have focused on polymer coatings with layer thicknesses between 1 µm and 18 µm. The tested polymer materials were benzocyclobutene (BCB) from Dow Chemical, a negative photoresist (ULTRA-i 300) and a positive photoresist (S1818) from Shipley, a polyimide (HTR3) from Arch Chemical and two different polyimides (PI2555 and PI2610) from DuPont. The polymer material, the bonding pressure and the pre-curing time and temperature for the polymer significantly influence void formation at the bond interface. High bonding pressure and optimum pre-curing times/temperatures counteract void formation. We present the process parameters to achieve void-free bonding with the BCB coating and with the ULTRA-i 300 photoresist coating as adhesive materials. Excellent void-free and strong bonds have been achieved by using BCB as the bonding material which requires a minimum bonding temperature of 180 °C.

  5. Use of dMLC for implementation of dynamic respiratory-gated radiation therapy

    SciTech Connect

    Pepin, Eric W.; Wu, Huanmei; Shirato, Hiroki

    2013-10-15

    Purpose: To simulate and evaluate the use of dynamic multileaf collimators (dMLC) in respiratory gating to compensate for baseline drift.Methods: Tumor motion tracking data from 30 lung tumors over 322 treatment fractions was analyzed with the finite state model. A dynamic respiratory gating window was established in real-time by determining the average positions during the previous two end-of-expiration breathing phases and centering the dMLC aperture on a weighted average of these positions. A simulated dMLC with physical motion constraints was used in dynamic gating treatment simulations. Fluence maps were created to provide a statistical description of radiation delivery for each fraction. Duty cycle was also calculated for each fraction.Results: The average duty cycle was 2.3% greater under dynamic gating conditions. Dynamic gating also showed higher fluences and less tumor obstruction. Additionally, dynamic gating required fewer beam toggles and each delivery period was longer on average than with static gating.Conclusions: The use of dynamic gating showed better performance than static gating and the physical constraints of a dMLC were shown to not be an impediment to dynamic gating.

  6. Efficient data transmission from silicon wafer strip detectors

    SciTech Connect

    Cooke, B.J.; Lackner, K.S.; Palounek, A.P.T.; Sharp, D.H.; Winter, L.; Ziock, H.J.

    1991-12-31

    An architecture for on-wafer processing is proposed for central silicon-strip tracker systems as they are currently designed for high energy physics experiments at the SSC, and for heavy ion experiments at RHIC. The data compression achievable with on-wafer processing would make it possible to transmit all data generated to the outside of the detector system. A set of data which completely describes the state of the wafer for low occupancy events and which contains important statistical information for more complex events can be transmitted immediately. This information could be used in early trigger decisions. Additional data packages which complete the description of the state of the wafer vary in size and are sent through a second channel. By buffering this channel the required bandwidth can be kept far below the peak data rates which occur in rate but interesting events. 18 refs.

  7. Proceedings of the Low-Cost Solar Array Wafering Workshop

    NASA Technical Reports Server (NTRS)

    Morrison, A. D.

    1982-01-01

    The technology and economics of silicon ingot wafering for low cost solar arrays were discussed. Fixed and free abrasive sawing wire, ID, and multiblade sawing, materials, mechanisms, characterization, and innovative concepts were considered.

  8. Surface defects in GaAs wafer processes

    NASA Astrophysics Data System (ADS)

    Matsushita, H.; Ishida, M.; Kikawa, J.

    1990-06-01

    The causes of micro- and macro-irregularities observed on GaAs(100) polished wafers were investigated. From the results, the wafer processes were improved so that a high-quality surface was obtained without orange peel, haze, or pits. For 3-inch wafers the flatness was improved to less than 2 μm in TTV and the warp to less than 5 μm. Improvements in the wafer processes were: development of a better polishing solution, filtering of this solution with maintenance of the pad conditions, thereby eliminating scratches, annealing at high temperature to eliminate pits, advances in slicing and lapping to reduce warp, and three-stage double-sided polishing to eliminate dimples and to improve TTV.

  9. Particle-wafer interactions in semiaqueous silicon cleaning systems

    NASA Astrophysics Data System (ADS)

    Hupka, Lukasz

    During the semiconductor chip manufacturing process, a silicon wafer goes through a number of cycles in both hydrophilic and hydrophobic environments. As silicon chips become more sophisticated, the manufacturing process becomes more involved and new challenges are imposed by size reduction, increase in the aspect ratio and the formation of multilayer structures. Wafer cleaning processes emerge several times in one manufacturing cycle. By rule of thumb, it is necessary to remove wafer contamination by particles which are half of a feature size. This is an enormous challenge, keeping in mind that currently wafer structures are of nanometer size. The cleaning procedures which worked for the last 40 years are becoming ineffective and obsolete. The industry calls for more efficient cleaning procedures in terms of particle contamination removal, and at the same time less aggressive procedures to prevent damage/dissolution of the fragile and narrow wafer structures. Atomic Force Microscopy (AFM), besides being an imaging tool with nano resolution, proves to be an indispensable instrument to characterize interaction forces, lateral forces, and adhesion between micron and submicron contaminant particles and the wafer surfaces both in air and liquid. Using the AFM colloidal probe technique interaction forces were measured between a contaminant particle and a wafer surface. These measurements were done for the silica---silica hydrophilic system and for the silanated silica---silanated silica hydrophobic system. The influence of the nonaqueous component in semiconductor wafer cleaning solution on interaction forces was also investigated under both hydrophilic and hydrophobic conditions. In addition the effect of particle size on the interaction forces as well as particle removal rate under both conditions is addressed. While force/radius normalization of measured interaction forces works great for hydrophilic systems, it was found to significantly underestimate the influence

  10. Development of Megasonic cleaning for silicon wafers. Final report

    SciTech Connect

    Mayer, A.

    1980-09-01

    The major goals to develop a cleaning and drying system for processing at least 2500 three-in.-diameter wafers per hour and to reduce the process cost were achieved. The new system consists of an ammonia-hydrogen peroxide bath in which both surfaces of 3/32-in.-spaced, ion-implanted wafers are cleaned in quartz carriers moved on a belt past two pairs of Megasonic transducers. The wafers are dried in the novel room-temperature, high-velocity air dryer in the same carriers used for annealing. A new laser scanner was used effectively to monitor the cleaning ability on a sampling basis. The following factors contribute to the improved effectiveness of the process: (1) recirculation and filtration of the cleaning solution permit it to be used for at least 100,000 wafers with only a relatively small amount of chemical make-up before discarding; (2) uniform cleanliness is achieved because both sides of the wafer are Megasonically scrubbed to remove particulate impurities; (3) the novel dryer permits wafers to be dried in a high-velocity room-temperature air stream on a moving belt in their quartz carriers; and (4) the personnel safety of such a system is excellent and waste disposal has no adverse ecological impact. With the addition of mechanical transfer arms, two systems like the one developed will produce enough cleaned wafers for a 30-MW/year production facility. A projected scale-up well within the existing technology would permit a system to be assembled that produces about 12,745 wafers per hour; about 11 such systems, each occupying about 110 square feet, would be needed for each cleaning stage of a 500-MW/year production facility.

  11. Dynamic partial reconfiguration implementation of the SVM/KNN multi-classifier on FPGA for bioinformatics application.

    PubMed

    Hussain, Hanaa M; Benkrid, Khaled; Seker, Huseyin

    2015-08-01

    Bioinformatics data tend to be highly dimensional in nature thus impose significant computational demands. To resolve limitations of conventional computing methods, several alternative high performance computing solutions have been proposed by scientists such as Graphical Processing Units (GPUs) and Field Programmable Gate Arrays (FPGAs). The latter have shown to be efficient and high in performance. In recent years, FPGAs have been benefiting from dynamic partial reconfiguration (DPR) feature for adding flexibility to alter specific regions within the chip. This work proposes combing the use of FPGAs and DPR to build a dynamic multi-classifier architecture that can be used in processing bioinformatics data. In bioinformatics, applying different classification algorithms to the same dataset is desirable in order to obtain comparable, more reliable and consensus decision, but it can consume long time when performed on conventional PC. The DPR implementation of two common classifiers, namely support vector machines (SVMs) and K-nearest neighbor (KNN) are combined together to form a multi-classifier FPGA architecture which can utilize specific region of the FPGA to work as either SVM or KNN classifier. This multi-classifier DPR implementation achieved at least ~8x reduction in reconfiguration time over the single non-DPR classifier implementation, and occupied less space and hardware resources than having both classifiers. The proposed architecture can be extended to work as an ensemble classifier. PMID:26738068

  12. Thermomechanical global response of the EUVL wafer during exposure

    NASA Astrophysics Data System (ADS)

    Chang, Jaehyuk; Martin, Carl J.; Engelstad, Roxann L.; Lovell, Edward G.

    2002-07-01

    Extreme ultraviolet lithography (EUVL) is one of the leading technologies for Next-Generation Lithography. Continued progress in its development will be facilitated by characterizing all sources of distortion in the chip fabrication process. These include the thermal distortions of the wafer caused by deposited EUVL energy during scanning exposure. Absorbed energy from the beam produces temperature increases and structural displacements in the wafer, which directly contribute to pattern placement errors and image blur. Because of the vacuum conditions of EUVL systems, wafer chucking will be electrostatic, which has a number of advantages over mechanical clamping systems. The goals of this research are to predict the transient temperature increases and corresponding displacements (locally and globally) consistent with the thermomechanical boundary conditions of the wafer. Both thermal and structural finite element models were constructed to numerically simulate wafer exposure. The response of the wafer is relatively sensitive to the interface conditions between the substrate and electrostatic chuck. Thus, parametric studies of the response to changes in the contact conductance and the friction coefficient were performed and are presented in this paper.

  13. Further investigation of EUV process sensitivities for wafer track processing

    NASA Astrophysics Data System (ADS)

    Bradon, Neil; Nafus, K.; Shite, H.; Kitano, J.; Kosugi, H.; Goethals, M.; Cheng, S.; Hermans, J.; Hendrickx, E.; Baudemprez, B.; Van Den Heuvel, D.

    2010-04-01

    As Extreme ultraviolet (EUV) lithography technology shows promising results below 40nm feature sizes, TOKYO ELECTRON LTD.(TEL) is committed to understanding the fundamentals needed to improve our technology, thereby enabling customers to meet roadmap expectations. TEL continues collaboration with imec for evaluation of Coater/Developer processing sensitivities using the ASML Alpha Demo Tool for EUV exposures. The results from the collaboration help develop the necessary hardware for EUV Coater/Developer processing. In previous work, processing sensitivities of the resist materials were investigated to determine the impact on critical dimension (CD) uniformity and defectivity. In this work, new promising resist materials have been studied and more information pertaining to EUV exposures was obtained. Specifically, post exposure bake (PEB) impact to CD is studied in addition to dissolution characteristics and resist material hydrophobicity. Additionally, initial results show the current status of CDU and defectivity with the ADT/CLEAN TRACK ACTTM 12 lithocluster. Analysis of a five wafer batch of CDU wafers shows within wafer and wafer to wafer contribution from track processing. A pareto of a patterned wafer defectivity test gives initial insight into the process defects with the current processing conditions. From analysis of these data, it's shown that while improvements in processing are certainly possible, the initial results indicate a manufacturable process for EUV.

  14. Development of a Whole-Wafer, Macroscale Inspection Software Method for Semiconductor Wafer Analysis

    SciTech Connect

    Tobin, K.W.

    2003-05-22

    This report describes the non CRADA-protected results of the project performed between Nova Measuring Systems, Ltd., and the Oak Ridge National Laboratory to test and prototype defect signature analysis method for potential incorporation into an in-situ wafer inspection microscope. ORNL's role in this activity was to collaborate with Nova on the analysis and software side of the effort, wile Nova's role was to build the physical microscope and provide data to ORNL for test and evaluation. The objective of this project was to adapt and integrate ORNL's SSA and ADC methods and technologies in the Nova imaging environment. ORNL accomplished this objective by modifying the existing SSA technology for use as a wide-area signature analyzer/classifier on the Nova macro inspection tool (whole-wafer analysis). During this effort ORNL also developed a strategy and methodology for integrating and presenting the results of SSA/ADC analysis to the tool operator and/or data management system (DMS) used by the semiconductor manufacturer (i.e., the end-user).

  15. Electrochemical method for defect delineation in silicon-on-insulator wafers

    DOEpatents

    Guilinger, Terry R.; Jones, Howland D. T.; Kelly, Michael J.; Medernach, John W.; Stevenson, Joel O.; Tsao, Sylvia S.

    1991-01-01

    An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

  16. Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage

    PubMed Central

    Rack, Alexander; Scheel, Mario; Danilewsky, Andreas N.

    2016-01-01

    Fracture and breakage of single crystals, particularly of silicon wafers, are multi-scale problems: the crack tip starts propagating on an atomic scale with the breaking of chemical bonds, forms crack fronts through the crystal on the micrometre scale and ends macroscopically in catastrophic wafer shattering. Total wafer breakage is a severe problem for the semiconductor industry, not only during handling but also during temperature treatments, leading to million-dollar costs per annum in a device production line. Knowledge of the relevant dynamics governing perfect cleavage along the {111} or {110} faces, and of the deflection into higher indexed {hkl} faces of higher energy, is scarce due to the high velocity of the process. Imaging techniques are commonly limited to depicting only the state of a wafer before the crack and in the final state. This paper presents, for the first time, in situ high-speed crack propagation under thermal stress, imaged simultaneously in direct transmission and diffraction X-ray imaging. It shows how the propagating crack tip and the related strain field can be tracked in the phase-contrast and diffracted images, respectively. Movies with a time resolution of microseconds per frame reveal that the strain and crack tip do not propagate continuously or at a constant speed. Jumps in the crack tip position indicate pinning of the crack tip for about 1–2 ms followed by jumps faster than 2–6 m s−1, leading to a macroscopically observed average velocity of 0.028–0.055 m s−1. The presented results also give a proof of concept that the described X-ray technique is compatible with studying ultra-fast cracks up to the speed of sound. PMID:27006774

  17. Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage.

    PubMed

    Rack, Alexander; Scheel, Mario; Danilewsky, Andreas N

    2016-03-01

    Fracture and breakage of single crystals, particularly of silicon wafers, are multi-scale problems: the crack tip starts propagating on an atomic scale with the breaking of chemical bonds, forms crack fronts through the crystal on the micrometre scale and ends macroscopically in catastrophic wafer shattering. Total wafer breakage is a severe problem for the semiconductor industry, not only during handling but also during temperature treatments, leading to million-dollar costs per annum in a device production line. Knowledge of the relevant dynamics governing perfect cleavage along the {111} or {110} faces, and of the deflection into higher indexed {hkl} faces of higher energy, is scarce due to the high velocity of the process. Imaging techniques are commonly limited to depicting only the state of a wafer before the crack and in the final state. This paper presents, for the first time, in situ high-speed crack propagation under thermal stress, imaged simultaneously in direct transmission and diffraction X-ray imaging. It shows how the propagating crack tip and the related strain field can be tracked in the phase-contrast and diffracted images, respectively. Movies with a time resolution of microseconds per frame reveal that the strain and crack tip do not propagate continuously or at a constant speed. Jumps in the crack tip position indicate pinning of the crack tip for about 1-2 ms followed by jumps faster than 2-6 m s(-1), leading to a macroscopically observed average velocity of 0.028-0.055 m s(-1). The presented results also give a proof of concept that the described X-ray technique is compatible with studying ultra-fast cracks up to the speed of sound. PMID:27006774

  18. A wafer-level vacuum package using glass-reflowed silicon through-wafer interconnection for nano/micro devices.

    PubMed

    Jin, Joo-Young; Yoo, Seung-Hyun; Yoo, Byung-Wook; Kim, Yong-Kweon

    2012-07-01

    We propose a vacuum wafer-level packaging (WLP) process using glass-reflowed silicon via for nano/micro devices (NMDs). A through-wafer interconnection (TWIn) substrate with silicon vias and reflowed glass is introduced to accomplish a vertical feed-through of device. NMDs are fabricated in the single crystal silicon (SCS) layer which is formed on the TWIn substrate by Au eutectic bonding including Cr adhesion layer. The WLPof the devices is achieved with the capping glass wafer anodically bonded to the SCS layer. In order to demonstrate the successful hermetic packaging, we fabricated the micro-Pirani gauge in the SCS layer, and packaged it in the wafer-level. The vacuum level inside the packaging was measured to be 3.1 Torr with +/- 0.12 Torr uncertainty, and the packaging leakage was not detected during 24 hour after the packaging. PMID:22966554

  19. Implementation and Test of the Automatic Flight Dynamics Operations for Geostationary Satellite Mission

    NASA Astrophysics Data System (ADS)

    Park, Sangwook; Lee, Young-Ran; Hwang, Yoola; Javier Santiago Noguero Galilea

    2009-12-01

    This paper describes the Flight Dynamics Automation (FDA) system for COMS Flight Dynamics System (FDS) and its test result in terms of the performance of the automation jobs. FDA controls the flight dynamics functions such as orbit determination, orbit prediction, event prediction, and fuel accounting. The designed FDA is independent from the specific characteristics which are defined by spacecraft manufacturer or specific satellite missions. Therefore, FDA could easily links its autonomous job control functions to any satellite mission control system with some interface modification. By adding autonomous system along with flight dynamics system, it decreases the operator’s tedious and repeated jobs but increase the usability and reliability of the system. Therefore, FDA is used to improve the completeness of whole mission control system’s quality. The FDA is applied to the real flight dynamics system of a geostationary satellite, COMS and the experimental test is performed. The experimental result shows the stability and reliability of the mission control operations through the automatic job control.

  20. Using Dynamic Value Stream Mapping and Lean Accounting Box Scores to Support Lean Implementation

    ERIC Educational Resources Information Center

    Woehrle, Stephen L.; Abou-Shady, Louay

    2010-01-01

    Lean has proven to be an effective management philosophy for improving businesses in a competitive market by eliminating waste and improving operations. An impact of implementing lean projects is the rapid reduction in inventory levels, which gives management the false impression that profits are decreasing while workers on the shop floor observe…

  1. Organizational Strategies for Promoting Instructional Change: Implementation Dynamics in Schools Working with Comprehensive School Reform Providers

    ERIC Educational Resources Information Center

    Rowan, Brian; Miller, Robert J.

    2007-01-01

    This article develops a conceptual framework for studying how three comprehensive school reform (CSR) programs organized schools for instructional change and how the distinctive strategies they pursued affected implementation outcomes. The conceptual model views the Accelerated Schools Project as using a system of cultural control to produce…

  2. Dynamic Sustainability: Practitioners' Perspectives on Housing First Implementation Challenges and Model Fidelity Over Time

    ERIC Educational Resources Information Center

    Stergiopoulos, Vicky; Zerger, Suzanne; Jeyaratnam, Jeyagobi; Connelly, Jolynn; Kruk, Katherine; O'Campo, Patricia; Hwang, Stephen

    2016-01-01

    Objectives: Although Housing First (HF) is a popular evidence-based intervention for persons experiencing homelessness and mental illness, research exploring its sustainability over time is scant. This mixed methods study captures practitioners' perspectives on key shifts in implementation of Housing First in a large urban center, and factors…

  3. ThermoData Engine (TDE): software implementation of the dynamic data evaluation concept. 6. Dynamic web-based data dissemination through the NIST Web Thermo Tables.

    PubMed

    Kroenlein, Kenneth; Muzny, Chris D; Diky, Vladimir; Kazakov, Andrei F; Chirico, Robert D; Magee, Joseph W; Abdulagatov, Ilmutdin; Frenkel, Michael

    2011-06-27

    ThermoData Engine (TDE) is the first full-scale software implementation of the dynamic data evaluation concept, as reported recently in this journal. In the present paper, we describe the development of a World Wide Web-based interface to TDE evaluations of pure compound properties, including critical properties, phase boundary equilibria (vapor pressures, sublimation pressures, and crystal-liquid boundary pressures), densities, energetic properties, and transport properties. This includes development of a system for caching evaluation results to maintain high availability and an advanced window-in-window interface that leverages modern Web-browser technologies. Challenges associated with bringing the principal advantages of the TDE technology to the Web are described, as are compromises to maintain general access and speed of interaction while remaining true to the tenets of dynamic data evaluation. Future extensions of the interface and associated Web-services are outlined. PMID:21517125

  4. Implementation of malaria dynamic models in municipality level early warning systems in Colombia. Part I: description of study sites.

    PubMed

    Ruiz, Daniel; Cerón, Viviana; Molina, Adriana M; Quiñónes, Martha L; Jiménez, Mónica M; Ahumada, Martha; Gutiérrez, Patricia; Osorio, Salua; Mantilla, Gilma; Connor, Stephen J; Thomson, Madeleine C

    2014-07-01

    As part of the Integrated National Adaptation Pilot project and the Integrated Surveillance and Control System, the Colombian National Institute of Health is working on the design and implementation of a Malaria Early Warning System framework, supported by seasonal climate forecasting capabilities, weather and environmental monitoring, and malaria statistical and dynamic models. In this report, we provide an overview of the local ecoepidemiologic settings where four malaria process-based mathematical models are currently being implemented at a municipal level. The description includes general characteristics, malaria situation (predominant type of infection, malaria-positive cases data, malaria incidence, and seasonality), entomologic conditions (primary and secondary vectors, mosquito densities, and feeding frequencies), climatic conditions (climatology and long-term trends), key drivers of epidemic outbreaks, and non-climatic factors (populations at risk, control campaigns, and socioeconomic conditions). Selected pilot sites exhibit different ecoepidemiologic settings that must be taken into account in the development of the integrated surveillance and control system. PMID:24891460

  5. Implementation of Malaria Dynamic Models in Municipality Level Early Warning Systems in Colombia. Part I: Description of Study Sites

    PubMed Central

    Ruiz, Daniel; Cerón, Viviana; Molina, Adriana M.; Quiñónes, Martha L.; Jiménez, Mónica M.; Ahumada, Martha; Gutiérrez, Patricia; Osorio, Salua; Mantilla, Gilma; Connor, Stephen J.; Thomson, Madeleine C.

    2014-01-01

    As part of the Integrated National Adaptation Pilot project and the Integrated Surveillance and Control System, the Colombian National Institute of Health is working on the design and implementation of a Malaria Early Warning System framework, supported by seasonal climate forecasting capabilities, weather and environmental monitoring, and malaria statistical and dynamic models. In this report, we provide an overview of the local ecoepidemiologic settings where four malaria process-based mathematical models are currently being implemented at a municipal level. The description includes general characteristics, malaria situation (predominant type of infection, malaria-positive cases data, malaria incidence, and seasonality), entomologic conditions (primary and secondary vectors, mosquito densities, and feeding frequencies), climatic conditions (climatology and long-term trends), key drivers of epidemic outbreaks, and non-climatic factors (populations at risk, control campaigns, and socioeconomic conditions). Selected pilot sites exhibit different ecoepidemiologic settings that must be taken into account in the development of the integrated surveillance and control system. PMID:24891460

  6. High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband.

    PubMed

    Sirbu, Alexei; Rantamäki, Antti; Saarinen, Esa J; Iakovlev, Vladimir; Mereuta, Alexandru; Lyytikäinen, Jari; Caliman, Andrei; Volet, Nicolas; Okhotnikov, Oleg G; Kapon, Eli

    2014-12-01

    We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of gain mirror structure, maximum output power values reach 7.1 W with intracavity diamond gain mirrors and 5.6 W with flip-chip gain mirrors, using a pump spot diameter of 300 µm, exhibiting a beam quality factor M(2)< 1.25 in the full operation range. These results confirm previously published theoretical modeling of these types of SDLs. PMID:25606874

  7. Development of a wafer positioning system for the Sandia extreme ultraviolet lithography tool

    SciTech Connect

    Wronosky, J.B.; Smith, T.G.; Darnold, J.R.

    1995-12-01

    A wafer positioning system was recently developed by Sandia National Laboratories for an Extreme Ultraviolet Lithography (EUVL) tool. The system, which utilizes a magnetically levitated fine stage to provide ultra-precise positioning in all six degrees of freedom, incorporates technological improvements resulting from four years of prototype development. This paper describes the design, implementation, and functional capability of the system. Specifics regarding control system electronics, including software and control algorithm structure, as well as performance design goals and test results are presented. Potential system enhancements, some of which are in process, are also discussed.

  8. Development of a Wafer Positioning System for the Sandia Extreme Ultraviolet Lithography Tool

    NASA Technical Reports Server (NTRS)

    Wronosky, John B.; Smith, Tony G.; Darnold, Joel R.

    1996-01-01

    A wafer positioning system was recently developed by Sandia National Laboratories for an Extreme Ultraviolet Lithography (EUVL) tool. The system, which utilizes a magnetically levitated fine stage to provide ultra-precise positioning in all six degrees of freedom, incorporates technological improvements resulting from four years of prototype development. This paper describes the design, implementation, and functional capability of the system. Specifics regarding control system electronics, including software and control algorithm structure, as well as performance design goals and test results are presented. Potential system enhancements, some of which are in process, are also discussed.

  9. Implementation and characterisation of new neutron imaging system for dynamic processes investigation at the Es-Salam research reactor.

    PubMed

    Kharfi, F; Denden, O; Abdelkader, A

    2011-10-01

    Neutron imaging is a powerful method for non-destructive investigations where high penetration through metals and in particular high contrast for hydrogenous materials maybe exploited. Due to the complexity of digital neutron static or video image formation, image capture conditions and parameters must be accurately selected. In this work, implementation of a new neutron imaging system based on CCD camera and LiF-ZnS scintillator is presented. The image characteristics in terms of contrast, noise and dynamic range and investigation limits of this new imaging system were studied as a function of the neutron source properties. PMID:21640596

  10. One-step implementation of the 1->3 orbital state quantum cloning machine via quantum Zeno dynamics

    SciTech Connect

    Shao Xiaoqiang; Wang Hongfu; Zhang Shou; Chen Li; Zhao Yongfang; Yeon, Kyu-Hwang

    2009-12-15

    We present an approach for implementation of a 1->3 orbital state quantum cloning machine based on the quantum Zeno dynamics via manipulating three rf superconducting quantum interference device (SQUID) qubits to resonantly interact with a superconducting cavity assisted by classical fields. Through appropriate modulation of the coupling constants between rf SQUIDs and classical fields, the quantum cloning machine can be realized within one step. We also discuss the effects of decoherence such as spontaneous emission and the loss of cavity in virtue of master equation. The numerical simulation result reveals that the quantum cloning machine is especially robust against the cavity decay, since all qubits evolve in the decoherence-free subspace with respect to cavity decay due to the quantum Zeno dynamics.

  11. Guidelines for Implementing a Dynamic Warm-Up for Physical Education

    ERIC Educational Resources Information Center

    Faigenbaum, Avery; McFarland, James E., Jr.

    2007-01-01

    Since recent studies have not found substantial evidence to support the use of static stretching during the warm-up period, there has been a growing interest in dynamic warm-up procedures that can enhance physical fitness, improve performance, and better prepare students for the main part of physical education. In this article, the potential…

  12. Design implementation and control of MRAS error dynamics. [Model-Reference Adaptive System

    NASA Technical Reports Server (NTRS)

    Colburn, B. K.; Boland, J. S., III

    1974-01-01

    Use is made of linearized error characteristic equation for model-reference adaptive systems to determine a parameter adjustment rule for obtaining time-invariant error dynamics. Theoretical justification of error stability is given and an illustrative example included to demonstrate the utility of the proposed technique.

  13. Heuristic Implementation of Dynamic Programming for Matrix Permutation Problems in Combinatorial Data Analysis

    ERIC Educational Resources Information Center

    Brusco, Michael J.; Kohn, Hans-Friedrich; Stahl, Stephanie

    2008-01-01

    Dynamic programming methods for matrix permutation problems in combinatorial data analysis can produce globally-optimal solutions for matrices up to size 30x30, but are computationally infeasible for larger matrices because of enormous computer memory requirements. Branch-and-bound methods also guarantee globally-optimal solutions, but computation…

  14. Teachers' Critical Evaluations of Dynamic Geometry Software Implementation in 1:1 Classrooms

    ERIC Educational Resources Information Center

    Ware, Jennifer; Stein, Sarah

    2014-01-01

    Although the use of dynamic software in high school mathematics in the United States has emerged as a research topic, little research has been conducted on how teachers integrate new software in relation to at-home technology networks. Interviews with eight mathematics teachers from four North Carolina counties participating in 1:1 laptop…

  15. The Implementation of the Finite-Volume Dynamical Core in the Community Atmosphere Model

    SciTech Connect

    Sawyer, W B; Mirin, A A

    2005-07-26

    A distributed memory message-passing parallel implementation of a finite-volume discretization of the primitive equations in the Community Atmosphere Model 3.0 is presented. These three-dimensional equations can be decoupled into a set of two-dimensional equations by the introduction of a floating vertical coordinate, resulting in considerable potential parallelism. Subsequent analysis of the data dependencies --in particular those arising from the polar singularity of the latitude-longitude coordinate system--suggests that two separate domain decompositions should be employed, each tailored for a different part of the model. The implementation requires that data be periodically redistributed between these two decompositions. Furthermore, data from nearest neighbors are kept in halo regions, which are updated between iterations. These data movements are optimized through one-sided communication primitives and multithreading. The resulting algorithm is shown to scale to very large machine configurations, even for relatively coarse resolutions.

  16. The Implementation of the Finite-Volume Dynamical Core in the Community Atmosphere Model

    SciTech Connect

    Sawyer, W B; Mirin, A A

    2004-11-30

    A distributed memory message-passing parallel implementation of a finite-volume discretization of the primitive equations in the Community Atmosphere Model is presented. These three-dimensional equations can be decoupled into a set of two-dimensional equations by the introduction of a floating vertical coordinate, resulting in considerable potential parallelism. Subsequent analysis of the data dependencies--in particular those arising from the polar singularity of the latitude-longitude coordinate system--suggests that two separate domain decompositions should be employed, each tailored for a different part of the model. The implementation requires that data be periodically redistributed between these two decompositions. Furthermore, data from nearest neighbors are kept in halo regions, which are updated between iterations. These data movements are optimized through one-sided communication primitives and multithreading. The resulting algorithm is shown to scale to very large machine configurations, even for relatively coarse resolutions.

  17. A simplified implementation of van der Waals density functionals for first-principles molecular dynamics applications

    NASA Astrophysics Data System (ADS)

    Wu, Jun; Gygi, François

    2012-06-01

    We present a simplified implementation of the non-local van der Waals correlation functional introduced by Dion et al. [Phys. Rev. Lett. 92, 246401 (2004)] and reformulated by Román-Pérez et al. [Phys. Rev. Lett. 103, 096102 (2009)]. The proposed numerical approach removes the logarithmic singularity of the kernel function. Complete expressions of the self-consistent correlation potential and of the stress tensor are given. Combined with various choices of exchange functionals, five versions of van der Waals density functionals are implemented. Applications to the computation of the interaction energy of the benzene-water complex and to the computation of the equilibrium cell parameters of the benzene crystal are presented. As an example of crystal structure calculation involving a mixture of hydrogen bonding and dispersion interactions, we compute the equilibrium structure of two polymorphs of aspirin (2-acetoxybenzoic acid, C9H8O4) in the P21/c monoclinic structure.

  18. Model implementation for dynamic computation of system cost for advanced life support

    NASA Technical Reports Server (NTRS)

    Levri, J. A.; Vaccari, D. A.

    2004-01-01

    Life support system designs for long-duration space missions have a multitude of requirements drivers, such as mission objectives, political considerations, cost, crew wellness, inherent mission attributes, as well as many other influences. Evaluation of requirements satisfaction can be difficult, particularly at an early stage of mission design. Because launch cost is a critical factor and relatively easy to quantify, it is a point of focus in early mission design. The method used to determine launch cost influences the accuracy of the estimate. This paper discusses the appropriateness of dynamic mission simulation in estimating the launch cost of a life support system. This paper also provides an abbreviated example of a dynamic simulation life support model and possible ways in which such a model might be utilized for design improvement. c2004 COSPAR. Published by Elsevier Ltd. All rights reserved.

  19. The Effect of the Dynamic Skills Protocol RTI Model on Reading Achievement in an Elementary School and the Predictive Validity of Phonics Screening Measures Implemented in the Model

    ERIC Educational Resources Information Center

    Laben, Joyce

    2012-01-01

    With the implementation of RTI, educators are attempting to find models that are the best fit for their schools. The problem solving and standard protocol models are the two most common. This study of 65 students examines a new model, the dynamic skills protocol implemented in an elementary school starting in their fourth quarter of kindergarten…

  20. Combining Dynamic and Electrocardiogram-gated 82Rb-PET for Practical Implementation in the Clinic

    PubMed Central

    Sayre, George A.; Bacharach, Stephen L.; Dae, Michael W.; Seo, Youngho

    2011-01-01

    Objectives For many cardiac clinics, list-mode PET is impractical. Thus, separate dynamic and electrocardiogram-gated (ECG-gated) acquisitions are needed to detect harmful stenoses; indicate affected coronary arteries; and estimate stenosis severity. However, physicians usually order gated studies only due to dose, time, and cost limitations and are limited to detection. In an effort to remove these limitations, we developed a novel curve-fitting algorithm (ICD) to accurately calculate coronary flow reserve (CFR) from a combined dynamic-ECG protocol of length equal to one typical gated scan. Methods We shortened several retrospective dynamic studies to simulate shortened dynamic acquisitions of the combined protocol and compared: 1) the accuracy of ICD and a nominal method in extrapolating the complete functional form of arterial input functions (AIFs); and 2) the accuracy of ICD and ICD-AP (ICD with a posteriori knowledge of complete-data AIFs) in predicting CFRs. Results AIFs predicted by ICD were more accurate than those predicted by the nominal method in 11/12 studies according to the Akaike Information Criterion. CFRs predicted by ICD and ICD-AP were similar to compete-data predictions (pICD = 0.94 and pICD-AP = 0.91) and had similar average errors (eICD = 2.82% and eICD-AP = 2.79%). Conclusions Both ICD and ICD-AP predicted CFR values with sufficient accuracy for the clinic according to a nuclear cardiologist and an expert analyst of PET data. Therefore, by using our method, physicians in cardiac clinics would have access to the necessary amount of information to differentiate between single-and triple- vessel disease for treatment decision-making. PMID:21934541

  1. Implementing and Simulating Dynamic Traffic Assignment with Intelligent Transportation Systems in Cube Avenue

    NASA Technical Reports Server (NTRS)

    Foytik, Peter; Robinson, Mike

    2010-01-01

    As urban populations and traffic congestion levels increase, effective use of information and communication tools and intelligent transportation systems as becoming increasingly important in order to maximize the efficiency of transportation networks. The appropriate placement and employment of these tools within a network is critical to their effectiveness. This presentation proposes and demonstrates the use of a commercial transportation simulation tool to simulate dynamic traffic assignment and rerouting to model route modifications as a result of traffic information.

  2. Implementing Molecular Dynamics for Hybrid High Performance Computers - 1. Short Range Forces

    SciTech Connect

    Brown, W Michael; Wang, Peng; Plimpton, Steven J; Tharrington, Arnold N

    2011-01-01

    The use of accelerators such as general-purpose graphics processing units (GPGPUs) have become popular in scientific computing applications due to their low cost, impressive floating-point capabilities, high memory bandwidth, and low electrical power requirements. Hybrid high performance computers, machines with more than one type of floating-point processor, are now becoming more prevalent due to these advantages. In this work, we discuss several important issues in porting a large molecular dynamics code for use on parallel hybrid machines - 1) choosing a hybrid parallel decomposition that works on central processing units (CPUs) with distributed memory and accelerator cores with shared memory, 2) minimizing the amount of code that must be ported for efficient acceleration, 3) utilizing the available processing power from both many-core CPUs and accelerators, and 4) choosing a programming model for acceleration. We present our solution to each of these issues for short-range force calculation in the molecular dynamics package LAMMPS. We describe algorithms for efficient short range force calculation on hybrid high performance machines. We describe a new approach for dynamic load balancing of work between CPU and accelerator cores. We describe the Geryon library that allows a single code to compile with both CUDA and OpenCL for use on a variety of accelerators. Finally, we present results on a parallel test cluster containing 32 Fermi GPGPUs and 180 CPU cores.

  3. Low-temperature titanium-based wafer bonding

    NASA Astrophysics Data System (ADS)

    Yu, Jian

    This thesis presents novel methods of metal-based wafer bonding at back-end-of-the-line (BEOL) compatible conditions (≤450°C). For the first time to our knowledge, 200 mm diameter oxidized Si wafers are bonded with prime Si wafers using 10-300 nm thick Ti as bonding intermediate at 300-450°C. Nearly void-free bonding with strong mechanical integrity has been confirmed. Moreover, microcavity formation has been demonstrated by bonding of patterned wafers. Both Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) show clear evidence of Si and Ti interdiffusion, whereas high-resolution transmission electron microscopy (HRTEM) reveals an approximately 8 nm thick amorphous layer at the bonding interface. Those results indicate that the strong adhesion at the Ti/Si bonding interface is attributed to a solid-state amorphization (SSA) assisted by interdiffusion. A key effort is devoted to fundamental investigation of low-temperature transition metal(TM)/Si-based wafer bonding. With the extensive work on Ti/Si system, additional experiments are performed with six other TM/Si systems, namely Ni/Si, Co/Si, Pd/Si, Hf/Si, Au/Si and Ta/Si. The results indicate there are two principal requirements for TM/Si-based wafer bonding: (1) intimate contact (able to break through kinetic barriers), and (2) adequate chemical bonding. Three kinetic barriers addressed in this thesis are: (1) enclosed microvoids due to surface roughness, (2) gas molecules at the bonding interface, and (3) interfacial oxides. Presence of these barriers can prevent formation of intimate contact, consequently retarding or even blocking interfacial interactions for chemical bonding. The unique properties of Group IVA metals (e.g., Ti and Hf) to reduce native SiO2 on Si surfaces and their exceptionally large solid solubility for O2 and N2, help overcome those issues. Once kinetic barriers are surmounted, the key for strong metal/Si-based wafer bonding is formation of chemical bonds

  4. Investigation of the Relationship between Whole-Wafer Strength and Control of Its Edge Engineering

    NASA Astrophysics Data System (ADS)

    Chen, Po-Ying; Tsai, Ming-Hsing; Yeh, Wen-Kuan; Jing, Ming-Haw; Chang, Yukon

    2009-12-01

    Silicon wafer breakage has become a major concern for all semiconductor fabrication lines because it is brittle, and thus high stresses are easily induced in its manufacture. The production cost of devices significantly increases even for a breakage loss of a few percent if wafers are broken near completion. Even wafer breakage near the beginning of the process is significant. In this investigation, we develop a brand new approach to reducing breakage by using a charge-coupled device (CCD) to capture the cross-section image of the wafer at its edge; the data measured at the edge can be used to determine overall wafer strength. Analysis of the image of the wafer edge is used to characterize silicon strength, and a simple drop test is conducted to elucidate wafer failure, improving our understanding of the accumulation of stress in the wafer bulk before failure. We also describe many of the improvements that have resulted in the virtual elimination of wafer breakage due to unidentified causes. Our analysis gives the optimal front size (B1), edge widths (A1,A2), and bevel angle (θ) for the edge profiles of wafers to prevent wafer breakage. Briefly, when a suitable material and suitable process control approaches are utilized, silicon wafer breakage can be prevented. This is the first investigation providing evidence that whole-wafer strength is an important issue. We present a physical model to explain why wafer fracture has become an increasingly serious problem as the diameter of wafers has increased. The control of wafer edge geometry has been demonstrated to be an effective means of protecting wafers with large diameters against breakage. This model reveals that the breakage rate of wafers can be reduced by controlling the uniformity of the differences between the front size and the rear edge widths during the wafer manufacturing process.

  5. Analog Electronic Implementation of a Class of Hybrid Dissipative Dynamical System

    NASA Astrophysics Data System (ADS)

    Ontañón-García, L. J.; Campos-Cantón, E.; Femat, R.

    An analog electronic implementation by means of operational amplifiers of a class of hybrid dissipative systems in R3 is presented. The switching systems have two unstable hyperbolic focus-saddle equilibria with the same stability index, a positive real eigenvalue and a pair of complex conjugated eigenvalues with negative real part. The analog circuit generates signals that oscillate in an attractor located between the two unstable equilibria, and may present saturation states at the moment of energizing it, i.e. if the initial voltage on the capacitors do not belong to the basin of attraction the circuit will end on a saturation state.

  6. Measuring Radiation Patterns of Reconfigurable Patch Antennas on Wafers

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.

    2004-01-01

    An apparatus and technique have been devised for measuring the radiation pattern of a microwave patch antenna that is one of a number of identical units that have been fabricated in a planar array on a high-resistivity silicon wafer. The apparatus and technique are intended, more specifically, for application to such an antenna that includes a DC-controlled microelectromechanical system (MEMS) actuator for switching the antenna between two polarization states or between two resonance frequencies. Prior to the development of the present apparatus and technique, patch antennas on wafers were tested by techniques and equipment that are more suited to testing of conventional printed-circuit antennas. The techniques included sawing of the wafers to isolate individual antennas for testing. The equipment included custom-built test fixtures that included special signal launchers and transmission-line transitions. The present apparatus and technique eliminate the need for sawing wafers and for custom-built test fixtures, thereby making it possible to test antennas in less time and at less cost. Moreover, in a production setting, elimination of the premature sawing of wafers for testing reduces loss from breakage, thereby enhancing yield.

  7. Silicon wafer-based tandem cells: The ultimate photovoltaic solution?

    NASA Astrophysics Data System (ADS)

    Green, Martin A.

    2014-03-01

    Recent large price reductions with wafer-based cells have increased the difficulty of dislodging silicon solar cell technology from its dominant market position. With market leaders expected to be manufacturing modules above 16% efficiency at 0.36/Watt by 2017, even the cost per unit area (60-70/m2) will be difficult for any thin-film photovoltaic technology to significantly undercut. This may make dislodgement likely only by appreciably higher energy conversion efficiency approaches. A silicon wafer-based cell able to capitalize on on-going cost reductions within the mainstream industry, but with an appreciably higher than present efficiency, might therefore provide the ultimate PV solution. With average selling prices of 156 mm quasi-square monocrystalline Si photovoltaic wafers recently approaching 1 (per wafer), wafers now provide clean, low cost templates for overgrowth of thin, wider bandgap high performance cells, nearly doubling silicon's ultimate efficiency potential. The range of possible Si-based tandem approaches is reviewed together with recent results and ultimate prospects.

  8. Simple and accurate optical height sensor for wafer inspection systems

    NASA Astrophysics Data System (ADS)

    Shimura, Kei; Nakai, Naoya; Taniguchi, Koichi; Itoh, Masahide

    2016-02-01

    An accurate method for measuring the wafer surface height is required for wafer inspection systems to adjust the focus of inspection optics quickly and precisely. A method for projecting a laser spot onto the wafer surface obliquely and for detecting its image displacement using a one-dimensional position-sensitive detector is known, and a variety of methods have been proposed for improving the accuracy by compensating the measurement error due to the surface patterns. We have developed a simple and accurate method in which an image of a reticle with eight slits is projected on the wafer surface and its reflected image is detected using an image sensor. The surface height is calculated by averaging the coordinates of the images of the slits in both the two directions in the captured image. Pattern-related measurement error was reduced by applying the coordinates averaging to the multiple-slit-projection method. Accuracy of better than 0.35 μm was achieved for a patterned wafer at the reference height and ±0.1 mm from the reference height in a simple configuration.

  9. Quantitative phase measurement for wafer-level optics

    NASA Astrophysics Data System (ADS)

    Qu, Weijuan; Wen, Yongfu; Wang, Zhaomin; Yang, Fang; Huang, Lei; Zuo, Chao

    2015-07-01

    Wafer-level-optics now is widely used in smart phone camera, mobile video conferencing or in medical equipment that require tiny cameras. Extracting quantitative phase information has received increased interest in order to quantify the quality of manufactured wafer-level-optics, detect defective devices before packaging, and provide feedback for manufacturing process control, all at the wafer-level for high-throughput microfabrication. We demonstrate two phase imaging methods, digital holographic microscopy (DHM) and Transport-of-Intensity Equation (TIE) to measure the phase of the wafer-level lenses. DHM is a laser-based interferometric method based on interference of two wavefronts. It can perform a phase measurement in a single shot. While a minimum of two measurements of the spatial intensity of the optical wave in closely spaced planes perpendicular to the direction of propagation are needed to do the direct phase retrieval by solving a second-order differential equation, i.e., with a non-iterative deterministic algorithm from intensity measurements using the Transport-of-Intensity Equation (TIE). But TIE is a non-interferometric method, thus can be applied to partial-coherence light. We demonstrated the capability and disability for the two phase measurement methods for wafer-level optics inspection.

  10. ThermoData Engine (TDE): software implementation of the dynamic data evaluation concept. 5. Experiment planning and product design.

    PubMed

    Diky, Vladimir; Chirico, Robert D; Kazakov, Andrei F; Muzny, Chris D; Magee, Joseph W; Abdulagatov, Ilmutdin; Kang, Jeong Won; Kroenlein, Kenneth; Frenkel, Michael

    2011-01-24

    ThermoData Engine (TDE) is the first full-scale software implementation of the dynamic data evaluation concept, as reported recently in this journal. In the present paper, we describe development of an algorithmic approach to assist experiment planning through assessment of the existing body of knowledge, including availability of experimental thermophysical property data, variable ranges studied, associated uncertainties, state of prediction methods, and parameters for deployment of prediction methods and how these parameters can be obtained using targeted measurements, etc., and, indeed, how the intended measurement may address the underlying scientific or engineering problem under consideration. A second new feature described here is the application of the software capabilities for aid in the design of chemical products through identification of chemical systems possessing desired values of thermophysical properties within defined ranges of tolerance. The algorithms and their software implementation to achieve this are described. Finally, implementation of a new data validation and weighting system is described for vapor-liquid equilibrium (VLE) data, and directions for future enhancements are outlined. PMID:21166466

  11. Practical implementation of enhanced dynamic wedge in the CadPlan treatment planning system.

    PubMed

    Samuelsson, A; Johansson, K A; Mattsson, O; Palm, A; Puurunen, H; Sernbo, G

    1997-01-01

    The Varian CadPlan algorithm for computation of relative dose distributions and monitor unit calculations for Enhanced Dynamic Wedge (EDW) fields is based on a combination of open field beam data and Segmented Treatment data Tables. Calculation of dose by the pencil beam convolution model uses scatter kernels and boundary kernels to create the distribution. The principles of the pencil beam convolution model is presented. Comparison of measured and calculated monitor units and relative dose distributions showed good agreement and the deviations are within international accepted tolerans. Test results indicate that the EDW model works satisfactorily for all energies and wedge angles. PMID:9307952

  12. Implementation of the North American Forest Dynamics (NAFD) Project: Current Progress and Future Plans

    NASA Astrophysics Data System (ADS)

    Thomas, N. E.; Goward, S. N.; Masek, J. G.; Cohen, W. B.; Moisen, G. G.; Huang, C.; Healey, S.; Kennedy, R.; Powell, S.; Schleeweis, K.; Rishmawi, K.; Hinds, A.

    2008-12-01

    Through the North American Forest Dynamics (NAFD) project we are evaluating forest disturbance and regrowth patterns by combining U.S. Forest Service Forest Inventory and Analysis (FIA) field observations with biennial time series Landsat imagery. Phase I of the NAFD study examined forest dynamics and disturbance history from Landsat time series stacks (LTSS) for 23 sample locations within the United States. These samples were selected with known inclusion probability to allow derivation of unbiased national estimates of disturbance rates with known uncertainty boundaries. FIA field plot data were used to validate the changes mapped in the Landsat data by the vegetation change tracker (VCT) algorithm. Additional accuracy assessment was performed on selected sample LTSS using visual analysis of the time series compared with high resolution imagery. Results of NAFD disturbance mapping to date reveal generally high rates of forest disturbance across the U.S., with these rates varying both spatially and temporally. Ongoing work for the Phase II NAFD study expands on this initial work, in several ways, to meet NACP goals. We are adding additional sample locations in the conterminous U.S. to reduce error in nationwide estimates of disturbance. We are also now partnering with Canada and Mexico to improve our understanding of continent- wide forest dynamics. The NAFD study has also developed collaborative relationships with other NACP- funded scientists who are using our analyses to inform their carbon assessment. In addition, we are currently developing nationwide maps of disturbance rates from model-based estimators combined with the sample site locations to better meet the needs of carbon modelers. The NAFD project is also extending forest dynamics analyses by examining regrowth patterns. We are doing so by converting Landsat data stacks to biomass to better characterize the carbon significance of forest disturbance and regrowth. We are also employing radiative transfer

  13. Optical wafer metrology sensors for process-robust CD and overlay control in semiconductor device manufacturing

    NASA Astrophysics Data System (ADS)

    den Boef, Arie J.

    2016-06-01

    This paper presents three optical wafer metrology sensors that are used in lithography for robustly measuring the shape and position of wafers and device patterns on these wafers. The first two sensors are a level sensor and an alignment sensor that measure, respectively, a wafer height map and a wafer position before a new pattern is printed on the wafer. The third sensor is an optical scatterometer that measures critical dimension-variations and overlay after the resist has been exposed and developed. These sensors have different optical concepts but they share the same challenge that sub-nm precision is required at high throughput on a large variety of processed wafers and in the presence of unknown wafer processing variations. It is the purpose of this paper to explain these challenges in more detail and give an overview of the various solutions that have been introduced over the years to come to process-robust optical wafer metrology.

  14. Ab initio implementation of quantum trajectory mean-field approach and dynamical simulation of the N2CO photodissociation.

    PubMed

    Xie, Binbin; Liu, Lihong; Cui, Ganglong; Fang, Wei-Hai; Cao, Jun; Feng, Wei; Li, Xin-qi

    2015-11-21

    In this work, the recently introduced quantum trajectory mean-field (QTMF) approach is implemented and employed to explore photodissociation dynamics of diazirinone (N2CO), which are based on the high-level ab initio calculation. For comparison, the photodissociation process has been simulated as well with the fewest-switches surface hopping (FSSH) and the ab initio multiple spawning (AIMS) methods. Overall, the dynamical behavior predicted by the three methods is consistent. The N2CO photodissociation at λ > 335 nm is an ultrafast process and the two C-N bonds are broken in a stepwise way, giving birth to CO and N2 as the final products in the ground state. Meanwhile, some noticeable differences were found in the QTMF, FSSH, and AIMS simulated time constants for fission of the C-N bonds, excited-state lifetime, and nonadiabatic transition ratios in different intersection regions. These have been discussed in detail. The present study provides a clear evidence that direct ab initio QTMF approach is one of the reliable tools for simulating nonadiabatic dynamics processes. PMID:26590527

  15. Dynamics of the Earth's fluid core: implementation of a Clairaut coordinate system

    NASA Astrophysics Data System (ADS)

    Seyed-Mahmoud, B.; Moradi, A.

    2013-12-01

    If the reference state of a rotating and self gravitating fluid body is one of hydrostatic equilibrium then the figure of the body is a spheroid such that a cross sectional area parallel to the equatorial plane of the body is a circle while that parallel to a meridional plane is an ellipse. The effect of the fluid body's flattened (spheroidal) figure is small on the frequencies of the body's short-period (shorter than a few hours in the case of the Earth) normal modes. For the log-period normal modes, however, these effects must be considered. Furthermore, the body's wobble and nutation modes owe their existence to its ellipsoidal figure. In the conventional approach to computing these frequencies, an orthogonal coordinate system is usually considered. It is then necessary to have the knowledge of the derivatives of the material properties of the body, such as the density and Lamé parameters, in order to include the effects of the ellipticity in the dynamical equations. In the available Earth models, however, these derivatives are not well defined. In order to minimize the effects of these derivatives in the treatment of the dynamical problems we use a non-orthogonal (Clairaut) coordinate system. Using this approach, we compute the frequencies and displacement eigenfunctions for some of the inertial modes of a realistic spheroidal model of the Earth's fluid core and compare them to the known results for an Earth model with a homogeneous and incompressible fluid core.

  16. Implementation of remote sensing data in research of coastal dynamics at the Baydaratskaya Bay, Kara Sea

    NASA Astrophysics Data System (ADS)

    Kuznetsov, D. E.; Belova, N.; Noskov, A.; Ogorodov, S.

    2011-12-01

    The development of Arctic coastal regions is now in progress due to significant amount of hydrocarbon deposits discovered. In high latitudes, natural hazards such as coastal erosion and thermoerosion, deflation, linear erosion and thermal denudation, ice gouging can make petroleum production and transport unprofitable. A prominent feature of Kara Sea, as well as other Arctic seas, is the development of coast in permafrost conditions. Despite the long ice period (up to 9 months), during the ice free period coastal dynamics are very intensive. If pipeline landfall site occurs at a shore section with high retreat rate (1 - 3m/year and higher), danger of pipeline damage due to exposure, line sagging and mechanical deformations becomes high. Protective measures may appear inefficient, since shore sections with active coastal erosion are subject not only to bluff retreat, but also to nearshore zone and coastal slope erosion. Exposed pipeline sections also get in danger of sea ice effect. For correct definition of coastal dynamics setting we use dual approach. The first part is perennial instrumental monitoring of shore morphology, relying on system of benchmarks used for repeated measures, together with in-field geomorphologic expertise. Measures include direct observations and geodetic leveling onshore and echosounding offshore. Being the most precise method, direct measurements are expensive. The other drawback is that they can't give an overview of long-span tendencies of coastal evolution for prolonged shore sections, which is essential for shore deformation forecast complying with lifetime of structures (usually 30 to 50 years). This is where the importance of the 2nd part, analysis of the different time remote sensing data, becomes decisive. Most important sources of remote sensing data include Corona imagery from 1960s - 70s, aerial photos of different times (but most of them are inaccessible for Russian Arctic coast), Landsat imagery (covering a long time span

  17. Microwave Induced Direct Bonding of Single Crystal Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Budraa, N. K.; Jackson, H. W.; Barmatz, M.

    1999-01-01

    We have heated polished doped single-crystal silicon wafers in a single mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates. A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry's at positions of high magnetic field. This process was conducted in vacuum to exclude plasma effects. This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.

  18. Nano-particle laser removal from silicon wafers

    NASA Astrophysics Data System (ADS)

    Lee, J. M.; Cho, S. H.; Kim, T. H.; Park, Jin-Goo; Busnaina, Ahmed A.

    2003-11-01

    A laser shock cleaning (LSC) technique as a new dry cleaning methodology has been applied to remove micro and nano-scale inorganic particulate contaminants. Shock wave is generated in the air just above the wafer surface by focusing intensive laser beam. The velocity of shock wave can be controlled to 10,000 m/sec. The sub-micron sized silica and alumina particles are attempted to remove from bare silicon wafer surfaces. More than 95% of removal efficiency of the both particles are carried out by the laser-induced airborne shock waves. In the final, a removal of nano-scale slurry particles from real patterned wafers are successfully demonstrated by LSC after chemical-mechanical polishing (CMP) process.

  19. On-wafer magnetic resonance of magnetite nanoparticles

    NASA Astrophysics Data System (ADS)

    Little, Charles A. E.; Russek, Stephen E.; Booth, James C.; Kabos, Pavel; Usselman, Robert J.

    2015-11-01

    Magnetic resonance measurements of ferumoxytol and TEMPO were made using an on-wafer transmission line technique with a vector network analyzer, allowing for broadband measurements of small sample volumes (4 nL) and small numbers of spins (1 nmol). On-wafer resonance measurements were compared with standard single-frequency cavity-based electron paramagnetic resonance (EPR) measurements using a new power conservation approach and the results show similar line shape. On-wafer magnetic resonance measurements using integrated microfluidics and microwave technology can significantly reduce the cost and sample volumes required for EPR spectral analysis and allow for integration of EPR with existing lab-on-a-chip processing and characterization techniques for point-of-care medical diagnostic applications.

  20. Silicon-wafer-surface damage revealed by surface photovoltage measurements

    NASA Astrophysics Data System (ADS)

    Goodman, Alvin M.

    1982-11-01

    Anomalous results of surface photovoltage (SPV) measurements on Si wafers are shown to be associated with a damaged region beneath the illuminated surface of the wafer being measured. The anomaly is a concave-upward curvature of the I0(α-1) plot with an r2 value, derived from linear regression analysis, less than the normally observed minimum value (˜0.98). Removal of the damaged region by an appropriate etching procedure allows subsequent SPV measurements whose results are substantially free of the previously observed anomaly. The qualitative character of the anomaly can be reproduced by a simple theoretical model in which only one effect of the damage is considered; this effect is a diminished quantum efficiency for hole-electron pair generation by photon absorption in the damaged region. The results suggest the use of SPV measurements as a test procedure for revealing the presence of surface damage in Si wafers.

  1. Silicon carbide wafer bonding by modified surface activated bonding method

    NASA Astrophysics Data System (ADS)

    Suga, Tadatomo; Mu, Fengwen; Fujino, Masahisa; Takahashi, Yoshikazu; Nakazawa, Haruo; Iguchi, Kenichi

    2015-03-01

    4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding between the SiC wafers with tensile strength greater than 32 MPa was demonstrated at room temperature under 5 kN force for 300 s. Almost the entire wafer has been bonded very well except a small peripheral region and few voids. The interface structure was analyzed to verify the bonding mechanism. It was found an amorphous layer existed as an intermediate layer at the interface. After annealing at 1273 K in vacuum for 1 h, the bonding tensile strength was still higher than 32 MPa. The interface changes after annealing were also studied. The results show that the thickness of the amorphous layer was reduced to half after annealing.

  2. IGBT scaling principle toward CMOS compatible wafer processes

    NASA Astrophysics Data System (ADS)

    Tanaka, Masahiro; Omura, Ichiro

    2013-02-01

    A scaling principle for trench gate IGBT is proposed. CMOS technology on large diameter wafer enables to produce various digital circuits with higher performance and lower cost. The transistor cell structure becomes laterally smaller and smaller and vertically shallower and shallower. In contrast, latest IGBTs have rather deeper trench structure to obtain lower on-state voltage drop and turn-off loss. In the aspect of the process uniformity and wafer warpage, manufacturing such structure in the CMOS factory is difficult. In this paper, we show the scaling principle toward shallower structure and better performance. The principle is theoretically explained by our previously proposed "Structure Oriented" analytical model. The principle represents a possibility of technology direction and roadmap for future IGBT for improving the device performance consistent with lower cost and high volume productivity with CMOS compatible large diameter wafer technologies.

  3. 450mm wafer patterning with jet and flash imprint lithography

    NASA Astrophysics Data System (ADS)

    Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

    2013-09-01

    The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

  4. Study on a new chaotic bitwise dynamical system and its FPGA implementation

    NASA Astrophysics Data System (ADS)

    Wang, Qian-Xue; Yu, Si-Min; Guyeux, C.; Bahi, J.; Fang, Xiao-Le

    2015-06-01

    In this paper, the structure of a new chaotic bitwise dynamical system (CBDS) is described. Compared to our previous research work, it uses various random bitwise operations instead of only one. The chaotic behavior of CBDS is mathematically proven according to the Devaney's definition, and its statistical properties are verified both for uniformity and by a comprehensive, reputed and stringent battery of tests called TestU01. Furthermore, a systematic methodology developing the parallel computations is proposed for FPGA platform-based realization of this CBDS. Experiments finally validate the proposed systematic methodology. Project supported by China Postdoctoral Science Foundation (Grant No. 2014M552175), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Chinese Education Ministry, the National Natural Science Foundation of China (Grant No. 61172023), and the Specialized Research Foundation of Doctoral Subjects of Chinese Education Ministry (Grant No. 20114420110003).

  5. The implementation of a modernized Dynamic Digital Map on Gale Crater, Mars

    NASA Astrophysics Data System (ADS)

    McBeck, J.; Condit, C. D.

    2012-12-01

    Currently, geology instructors present information to students via PowerPoint, Word, Excel and other programs that are not designed to parse or present geologic data. More tech-savvy, and perhaps better-funded, instructors use Google Earth or ArcGIS to display geologic maps and other visual information. However, Google Earth lacks the ability to present large portions of text, and ArcGIS restricts such functionality to labels and annotations. The original Dynamic Digital Map, which we have renamed Dynamic Digital Map Classic (DDMC), allows instructors to represent both visual and large portions of textual information to students. This summer we generalized the underlying architecture of DDMC, redesigned the user interface, modernized the analytical functionality, renamed the older version and labeled this new creature Dynamic Digital Map Extended (DDME). With the new DDME instructors can showcase maps, images, articles and movies, and create digital field trips. They can set the scale, coordinate system and caption of maps and images, add symbol links to maps and images that can transport the user to any specified destination—either internally (to data contained within the DDME) or externally (to a website address). Instructors and students can also calculate non-linear distances and irregular areas of maps and images, and create digital field trips with any number of stops—complete with notes and driving directions. DDMEs are perhaps best described as a sort of computerized, self-authored, interactive textbook. To display the vast capabilities of DDME, we created a DDME of Gale Crater (DDME-GC), which is the landing site of the most sophisticated NASA Mars Rover—Curiosity. DDME-GC hosts six thematic maps: a detailed geologic map provided by Brad Thompson of the Boston University Center for Remote Sensing (Thompson, et al., 2010), and five maps maintained in ASU's JMARS system, including global mosaics from Mars Global Surveyor's Mars Orbiter Laser Altimeter

  6. Wafer CD variation for random units of track and polarization

    NASA Astrophysics Data System (ADS)

    Ning, Guoxiang; Ackmann, Paul; Richter, Frank; Kurth, Karin; Maelzer, Stephanie; Hsieh, Michael; Schurack, Frank; GN, Fang Hong

    2012-03-01

    After wafer processing in a scanner the process of record (POR) flows in a photo track are characterized by a random correlation between post exposure bake (PEB) and development (DEV) units of the photo track. The variation of the critical dimensions (CD) of the randomly correlated units used for PEB and DEV should be as small as possible - especially for technology nodes of 28nm and below. Even a point-to-point error of only 1nm could affect the final product yield results due to the relatively narrow process window of 28nm tech-node. The correlation between reticle measurements to target (MTT) and wafer MTT may in addition be influenced by the random correlation between units used for PEB and DEV. The polarization of the light source of the scanner is one of the key points for the wafer CD performance too - especially for the critical dimensions uniformity (CDU) performance. We have investigated two track flows, one with fixed and one with random unit correlation. The reticle used for the experiments is a 28nm active layer sample reticle. The POR track flow after wafer process in the scanner is characterized by a random correlation between PEB- and DEV-units. The set-up of the engineering (ENG) process flow is characterized by a fixed unit correlation between PEB- and development-units. The critical dimension trough pitch (CDTP) and linearity performance is demonstrated; also the line-end performance for two dimensional (2D) structures is shown. The sub-die of intra-field CDU for isolated and dense structures is discussed as well as the wafer intra-field CD performance. The correlation between reticle MTT and wafer intra-field MTT is demonstrated for track POR and ENG processes. For different polarization conditions of the scanner source, the comparison of CDU for isolated and dense features has been shown. The dependency of the wafer intra-field MTT with respect to different polarization settings of the light source is discussed. The correlation between reticle

  7. An application of selective electrochemical wafer thinning for silicon characterization

    SciTech Connect

    Medernach, J.W.; Stein, H.J.; Stevenson, J.O.

    1990-01-01

    A new technique is reported for the rapid determination of interstitial oxygen (O{sub i}) in heavily doped n{sup +} and p{sup +} silicon. This technique includes application of a selective electrochemical thinning (SET) process and FTIR transmittance measurement on a limited area of a silicon wafer. The O{sub i} is calculated using ASTM F1188--88 with the IOC 88 calibration factor. An advantage of SET over mechanical thinning is that the original wafer thickness and diameter are maintained for additional processing. 1 tab.

  8. Recovery Act: Novel Kerf-Free PV Wafering that provides a low-cost approach to generate wafers from 150um to 50um in thickness

    SciTech Connect

    Fong, Theodore E.

    2013-05-06

    The technical paper summarizes the project work conducted in the development of Kerf-Free silicon wafering equipment for silicon solar wafering. This new PolyMax technology uses a two step process of implantation and cleaving to exfoliate 50um to 120um wafers with thicknesses ranging from 50um to 120um from a 125mm or 156mm pseudo-squared silicon ingot. No kerf is generated using this method of wafering. This method of wafering contrasts with the current method of making silicon solar wafers using the industry standard wire saw equipment. The report summarizes the activity conducted by Silicon Genesis Corporation in working to develop this technology further and to define the roadmap specifications for the first commercial proto-type equipment for high volume solar wafer manufacturing using the PolyMax technology.

  9. Apparatus and method for measuring the thickness of a semiconductor wafer

    DOEpatents

    Ciszek, T.F.

    1995-03-07

    Apparatus for measuring thicknesses of semiconductor wafers is discussed, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light. 4 figs.

  10. Entropic lattice Boltzmann model for gas dynamics: Theory, boundary conditions, and implementation

    NASA Astrophysics Data System (ADS)

    Frapolli, N.; Chikatamarla, S. S.; Karlin, I. V.

    2016-06-01

    We present in detail the recently introduced entropic lattice Boltzmann model for compressible flows [N. Frapolli et al., Phys. Rev. E 92, 061301(R) (2015), 10.1103/PhysRevE.92.061301]. The model is capable of simulating a wide range of laminar and turbulent flows, from thermal and weakly compressible flows to transonic and supersonic flows. The theory behind the construction of the model is laid out and its thermohydrodynamic limit is discussed. Based on this theory and the hydrodynamic limit thereof, we also construct the boundary conditions necessary for the simulation of solid walls. We present the inlet and outlet boundary conditions as well as no-slip and free-slip boundary conditions. Details necessary for the implementation of the compressible lattice Boltzmann model are also reported. Finally, simulations of compressible flows are presented, including two-dimensional supersonic and transonic flows around a diamond and a NACA airfoil, the simulation of the Schardin problem, and the three-dimensional simulation of the supersonic flow around a conical geometry.

  11. Development and Implementation of Dynamic Scripts to Execute Cycled WRF/GSI Forecasts

    NASA Technical Reports Server (NTRS)

    Zavodsky, Bradley; Srikishen, Jayanthi; Berndt, Emily; Li, Quanli; Watson, Leela

    2014-01-01

    Automating the coupling of data assimilation (DA) and modeling systems is a unique challenge in the numerical weather prediction (NWP) research community. In recent years, the Development Testbed Center (DTC) has released well-documented tools such as the Weather Research and Forecasting (WRF) model and the Gridpoint Statistical Interpolation (GSI) DA system that can be easily downloaded, installed, and run by researchers on their local systems. However, developing a coupled system in which the various preprocessing, DA, model, and postprocessing capabilities are all integrated can be labor-intensive if one has little experience with any of these individual systems. Additionally, operational modeling entities generally have specific coupling methodologies that can take time to understand and develop code to implement properly. To better enable collaborating researchers to perform modeling and DA experiments with GSI, the Short-term Prediction Research and Transition (SPoRT) Center has developed a set of Perl scripts that couple GSI and WRF in a cycling methodology consistent with the use of real-time, regional observation data from the National Centers for Environmental Prediction (NCEP)/Environmental Modeling Center (EMC). Because Perl is open source, the code can be easily downloaded and executed regardless of the user's native shell environment. This paper will provide a description of this open-source code and descriptions of a number of the use cases that have been performed by SPoRT collaborators using the scripts on different computing systems.

  12. Probing and exploiting the chaotic dynamics of a hydrodynamic photochemical oscillator to implement all the basic binary logic functions.

    PubMed

    Hayashi, Kenta; Gotoda, Hiroshi; Gentili, Pier Luigi

    2016-05-01

    The convective motions within a solution of a photochromic spiro-oxazine being irradiated by UV only on the bottom part of its volume, give rise to aperiodic spectrophotometric dynamics. In this paper, we study three nonlinear properties of the aperiodic time series: permutation entropy, short-term predictability and long-term unpredictability, and degree distribution of the visibility graph networks. After ascertaining the extracted chaotic features, we show how the aperiodic time series can be exploited to implement all the fundamental two-inputs binary logic functions (AND, OR, NAND, NOR, XOR, and XNOR) and some basic arithmetic operations (half-adder, full-adder, half-subtractor). This is possible due to the wide range of states a nonlinear system accesses in the course of its evolution. Therefore, the solution of the convective photochemical oscillator results in hardware for chaos-computing alternative to conventional complementary metal-oxide semiconductor-based integrated circuits. PMID:27249942

  13. Probing and exploiting the chaotic dynamics of a hydrodynamic photochemical oscillator to implement all the basic binary logic functions

    NASA Astrophysics Data System (ADS)

    Hayashi, Kenta; Gotoda, Hiroshi; Gentili, Pier Luigi

    2016-05-01

    The convective motions within a solution of a photochromic spiro-oxazine being irradiated by UV only on the bottom part of its volume, give rise to aperiodic spectrophotometric dynamics. In this paper, we study three nonlinear properties of the aperiodic time series: permutation entropy, short-term predictability and long-term unpredictability, and degree distribution of the visibility graph networks. After ascertaining the extracted chaotic features, we show how the aperiodic time series can be exploited to implement all the fundamental two-inputs binary logic functions (AND, OR, NAND, NOR, XOR, and XNOR) and some basic arithmetic operations (half-adder, full-adder, half-subtractor). This is possible due to the wide range of states a nonlinear system accesses in the course of its evolution. Therefore, the solution of the convective photochemical oscillator results in hardware for chaos-computing alternative to conventional complementary metal-oxide semiconductor-based integrated circuits.

  14. Numerical implementation of mathematical model of the dynamics of a porous medium on supercomputers of cluster architecture

    NASA Astrophysics Data System (ADS)

    Sadovskaya, O. V.; Sadovskii, V. M.

    2015-10-01

    The parallel computational algorithm for analysis of the processes of elastic-plastic deformation of a porous medium under the action of external dynamic loads is developed. This algorithm is based on the mathematical model taking into account threshold nature of change in the strength of a material under the collapse of pores. The algorithm is implemented in Fortran by means of functions of the MPI library. The parallel program system has been tested on clusters in computations of the propagation of plane longitudinal shock waves of the compression and in computations of the expansion of a cylindrical cavity in an infinite porous medium. The comparison of numerical results and exact solutions has shown their good qualitative and quantitative correspondence. Using the obtained algorithm, the process of propagation of elastic-plastic waves of the compression in a homogenous porous medium, accompanied by the deformation of a skeleton and the collapse of pores, is analyzed.

  15. Real-time dynamic simulation of the Cassini spacecraft using DARTS. Part 2: Parallel/vectorized real-time implementation

    NASA Technical Reports Server (NTRS)

    Fijany, A.; Roberts, J. A.; Jain, A.; Man, G. K.

    1993-01-01

    Part 1 of this paper presented the requirements for the real-time simulation of Cassini spacecraft along with some discussion of the DARTS algorithm. Here, in Part 2 we discuss the development and implementation of parallel/vectorized DARTS algorithm and architecture for real-time simulation. Development of the fast algorithms and architecture for real-time hardware-in-the-loop simulation of spacecraft dynamics is motivated by the fact that it represents a hard real-time problem, in the sense that the correctness of the simulation depends on both the numerical accuracy and the exact timing of the computation. For a given model fidelity, the computation should be computed within a predefined time period. Further reduction in computation time allows increasing the fidelity of the model (i.e., inclusion of more flexible modes) and the integration routine.

  16. Nonadiabatic dynamics with intersystem crossings: A time-dependent density functional theory implementation

    NASA Astrophysics Data System (ADS)

    Franco de Carvalho, F.; Tavernelli, I.

    2015-12-01

    In this work, we derive a method to perform trajectory-based nonadiabatic dynamics that is able to describe both nonadiabatic transitions and intersystem crossing events (transitions between states of different spin-multiplicity) at the same level of theory, namely, time-dependent density functional theory (TDDFT). To this end, we combined our previously developed TDDFT-based trajectory surface hopping scheme with an accurate and efficient algorithm for the calculation of the spin-orbit coupling (SOC) matrix elements. More specifically, we designed two algorithms for the calculation of intersystem crossing transitions, one based on an extended Tully's surface hopping scheme including SOC and the second based on a Landau-Zener approximation applied to the spin sector of the electronic Hilbert space. This development allows for the design of an efficient on-the-fly nonadiabatic approach that can handle, on an equal footing, nonadiabatic and intersystem crossing transitions. The method is applied to the study of the photophysics of sulfur dioxide (SO2) in gas and liquid phases.

  17. Development and Implementation of Dynamic Scripts to Execute Cycled GSI/WRF Forecasts

    NASA Technical Reports Server (NTRS)

    Zavodsky, Bradley; Srikishen, Jayanthi; Berndt, Emily; Li, Xuanli; Watson, Leela

    2014-01-01

    The Weather Research and Forecasting (WRF) numerical weather prediction (NWP) model and Gridpoint Statistical Interpolation (GSI) data assimilation (DA) are the operational systems that make up the North American Mesoscale (NAM) model and the NAM Data Assimilation System (NDAS) analysis used by National Weather Service forecasters. The Developmental Testbed Center (DTC) manages and distributes the code for the WRF and GSI, but it is up to individual researchers to link the systems together and write scripts to run the systems, which can take considerable time for those not familiar with the code. The objective of this project is to develop and disseminate a set of dynamic scripts that mimic the unique cycling configuration of the operational NAM to enable researchers to develop new modeling and data assimilation techniques that can be easily transferred to operations. The current version of the SPoRT GSI/WRF Scripts (v3.0.1) is compatible with WRF v3.3 and GSI v3.0.

  18. Bloodstain Pattern Analysis: implementation of a fluid dynamic model for position determination of victims

    NASA Astrophysics Data System (ADS)

    Laan, Nick; de Bruin, Karla G.; Slenter, Denise; Wilhelm, Julie; Jermy, Mark; Bonn, Daniel

    2015-06-01

    Bloodstain Pattern Analysis is a forensic discipline in which, among others, the position of victims can be determined at crime scenes on which blood has been shed. To determine where the blood source was investigators use a straight-line approximation for the trajectory, ignoring effects of gravity and drag and thus overestimating the height of the source. We determined how accurately the location of the origin can be estimated when including gravity and drag into the trajectory reconstruction. We created eight bloodstain patterns at one meter distance from the wall. The origin’s location was determined for each pattern with: the straight-line approximation, our method including gravity, and our method including both gravity and drag. The latter two methods require the volume and impact velocity of each bloodstain, which we are able to determine with a 3D scanner and advanced fluid dynamics, respectively. We conclude that by including gravity and drag in the trajectory calculation, the origin’s location can be determined roughly four times more accurately than with the straight-line approximation. Our study enables investigators to determine if the victim was sitting or standing, or it might be possible to connect wounds on the body to specific patterns, which is important for crime scene reconstruction.

  19. Nonadiabatic dynamics with intersystem crossings: A time-dependent density functional theory implementation

    SciTech Connect

    Franco de Carvalho, F.; Tavernelli, I.

    2015-12-14

    In this work, we derive a method to perform trajectory-based nonadiabatic dynamics that is able to describe both nonadiabatic transitions and intersystem crossing events (transitions between states of different spin-multiplicity) at the same level of theory, namely, time-dependent density functional theory (TDDFT). To this end, we combined our previously developed TDDFT-based trajectory surface hopping scheme with an accurate and efficient algorithm for the calculation of the spin-orbit coupling (SOC) matrix elements. More specifically, we designed two algorithms for the calculation of intersystem crossing transitions, one based on an extended Tully’s surface hopping scheme including SOC and the second based on a Landau-Zener approximation applied to the spin sector of the electronic Hilbert space. This development allows for the design of an efficient on-the-fly nonadiabatic approach that can handle, on an equal footing, nonadiabatic and intersystem crossing transitions. The method is applied to the study of the photophysics of sulfur dioxide (SO{sub 2}) in gas and liquid phases.

  20. Dynamics, Analysis and Implementation of a Multiscroll Memristor-Based Chaotic Circuit

    NASA Astrophysics Data System (ADS)

    Alombah, N. Henry; Fotsin, Hilaire; Ngouonkadi, E. B. Megam; Nguazon, Tekou

    This article introduces a novel four-dimensional autonomous multiscroll chaotic circuit which is derived from the actual simplest memristor-based chaotic circuit. A fourth circuit element — another inductor — is introduced to generate the complex behavior observed. A systematic study of the chaotic behavior is performed with the help of some nonlinear tools such as Lyapunov exponents, phase portraits, and bifurcation diagrams. Multiple scroll attractors are observed in Matlab, Pspice environments and also experimentally. We also observe the phenomenon of antimonotonicity, periodic and chaotic bubbles, multiple periodic-doubling bifurcations, Hopf bifurcations, crises and the phenomenon of intermittency. The chaotic dynamics of this circuit is realized by laboratory experiments, Pspice simulations, numerical and analytical investigations. It is observed that the results from the three environments agree to a great extent. This topology is likely convenient to be used to intentionally generate chaos in memristor-based chaotic circuit applications, given the fact that multiscroll chaotic systems have found important applications as broadband signal generators, pseudorandom number generators for communication engineering and also in biometric authentication.

  1. Nonadiabatic dynamics with intersystem crossings: A time-dependent density functional theory implementation.

    PubMed

    Franco de Carvalho, F; Tavernelli, I

    2015-12-14

    In this work, we derive a method to perform trajectory-based nonadiabatic dynamics that is able to describe both nonadiabatic transitions and intersystem crossing events (transitions between states of different spin-multiplicity) at the same level of theory, namely, time-dependent density functional theory (TDDFT). To this end, we combined our previously developed TDDFT-based trajectory surface hopping scheme with an accurate and efficient algorithm for the calculation of the spin-orbit coupling (SOC) matrix elements. More specifically, we designed two algorithms for the calculation of intersystem crossing transitions, one based on an extended Tully's surface hopping scheme including SOC and the second based on a Landau-Zener approximation applied to the spin sector of the electronic Hilbert space. This development allows for the design of an efficient on-the-fly nonadiabatic approach that can handle, on an equal footing, nonadiabatic and intersystem crossing transitions. The method is applied to the study of the photophysics of sulfur dioxide (SO2) in gas and liquid phases. PMID:26671356

  2. Modeling Urban Dynamics Using Random Forest: Implementing Roc and Toc for Model Evaluation

    NASA Astrophysics Data System (ADS)

    Ahmadlou, M.; Delavar, M. R.; Shafizadeh-Moghadam, H.; Tayyebi, A.

    2016-06-01

    The importance of spatial accuracy of land use/cover change maps necessitates the use of high performance models. To reach this goal, calibrating machine learning (ML) approaches to model land use/cover conversions have received increasing interest among the scholars. This originates from the strength of these techniques as they powerfully account for the complex relationships underlying urban dynamics. Compared to other ML techniques, random forest has rarely been used for modeling urban growth. This paper, drawing on information from the multi-temporal Landsat satellite images of 1985, 2000 and 2015, calibrates a random forest regression (RFR) model to quantify the variable importance and simulation of urban change spatial patterns. The results and performance of RFR model were evaluated using two complementary tools, relative operating characteristics (ROC) and total operating characteristics (TOC), by overlaying the map of observed change and the modeled suitability map for land use change (error map). The suitability map produced by RFR model showed 82.48% area under curve for the ROC model which indicates a very good performance and highlights its appropriateness for simulating urban growth.

  3. Implementation and characterization of flow injection in dissolution dynamic nuclear polarization NMR spectroscopy.

    PubMed

    Chen, Hsueh-Ying; Hilty, Christian

    2015-08-24

    The use of dissolution dynamic nuclear polarization (D-DNP) offers substantially increased signals in liquid-state NMR spectroscopy. A challenge in realizing this potential lies in the transfer of the hyperpolarized sample to the NMR detector without loss of hyperpolarization. Here, the use of a flow injection method using high-pressure liquid leads to improved performance compared to the more common gas-driven injection, by suppressing residual fluid motions during the NMR experiment while still achieving a short injection time. Apparent diffusion coefficients are determined from pulsed field gradient echo measurements, and are shown to fall below 1.5 times the value of a static sample within 0.8 s. Due to the single-scan nature of D-DNP, pulsed field gradients are often the only choice for coherence selection or encoding, but their application requires stationary fluid. Sample delivery driven by a high-pressure liquid will improve the applicability of these types of D-DNP advanced experiments. PMID:26139513

  4. Silicon Alignment Pins: An Easy Way to Realize a Wafer-to-Wafer Alignment

    NASA Technical Reports Server (NTRS)

    Jung-Kubiak, Cecile; Reck, Theodore J.; Lin, Robert H.; Peralta, Alejandro; Gill, John J.; Lee, Choonsup; Siles, Jose; Toda, Risaku; Chattopadhyay, Goutam; Cooper, Ken B.; Mehdi, Imran; Thomas, Bertrand

    2013-01-01

    Submillimeter heterodyne instruments play a critical role in addressing fundamental questions regarding the evolution of galaxies as well as being a crucial tool in planetary science. To make these instruments compatible with small platforms, especially for the study of the outer planets, or to enable the development of multi-pixel arrays, it is essential to reduce the mass, power, and volume of the existing single-pixel heterodyne receivers. Silicon micromachining technology is naturally suited for making these submillimeter and terahertz components, where precision and accuracy are essential. Waveguide and channel cavities are etched in a silicon bulk material using deep reactive ion etching (DRIE) techniques. Power amplifiers, multiplier and mixer chips are then integrated and the silicon pieces are stacked together to form a supercompact receiver front end. By using silicon micromachined packages for these components, instrument mass can be reduced and higher levels of integration can be achieved. A method is needed to assemble accurately these silicon pieces together, and a technique was developed here using etched pockets and silicon pins to align two wafers together.

  5. Process variation monitoring (PVM) by wafer inspection tool as a complementary method to CD-SEM for mapping field CDU on advanced production devices

    NASA Astrophysics Data System (ADS)

    Kim, Dae Jong; Yoo, Hyung Won; Kim, Chul Hong; Lee, Hak Kwon; Kim, Sung Su; Bae, Koon Ho; Spielberg, Hedvi; Lee, Yun Ho; Levi, Shimon; Bustan, Yariv; Rozentsvige, Moshe

    2010-03-01

    As design rules shrink, Critical Dimension Uniformity (CDU) and Line Edge Roughness (LER) have a dramatic effect on printed final lines and hence the need to control these parameters increases. Sources of CDU and LER variations include scanner auto-focus accuracy and stability, layer stack thickness, composition variations, and exposure variations. Process variations, in advanced VLSI production designs, specifically in memory devices, attributed to CDU and LER affect cell-to-cell parametric variations. These variations significantly impact device performance and die yield. Traditionally, measurements of LER are performed by CD-SEM or OCD metrology tools. Typically, these measurements require a relatively long time to set and cover only selected points of wafer area. In this paper we present the results of a collaborative work of the Process Diagnostic & Control Business Unit of Applied Materials and Hynix Semiconductor Inc. on the implementation of a complementary method to the CDSEM and OCD tools, to monitor defect density and post litho develop CDU and LER on production wafers. The method, referred to as Process Variation Monitoring (PVM) is based on measuring variations in the scattered light from periodic structures. The application is demonstrated using Applied Materials DUV bright field (BF) wafer inspection tool under optimized illumination and collection conditions. The UVisionTM has already passed a successful feasibility study on DRAM products with 66nm and 54nm design rules. The tool has shown high sensitivity to variations across an FEM wafer in both exposure and focus axes. In this article we show how PVM can help detection of Field to Field variations on DRAM wafers with 44nm design rule during normal production run. The complex die layout and the shrink in cell dimensions require high sensitivity to local variations within Dies or Fields. During normal scan of production wafers local Process variations are translated into GL (Grey Level) values

  6. Implementation and evaluation of modified dynamic conformal arc (MDCA) technique for lung SBRT patients following RTOG protocols

    SciTech Connect

    Shi, Chengyu; Tazi, Adam; Fang, Deborah Xiangdong; Iannuzzi, Christopher

    2013-10-01

    To implement modified dynamic conformal arc (MDCA) technique and Radiation Therapy Oncology Group (RTOG) protocols in our clinic for stereotactic body radiation therapy (SBRT) treatment of patients with Stage I/II non–small cell lung cancer. Five patients with non–small cell lung cancer have been treated with SBRT. All the patients were immobilized using CIVCO Body Pro-Lok system and scanned using GE 4-slice computed tomography. The MDCA technique that was previously published was adopted as our planning technique, and RTOG protocols for the lung SBRT were followed. The patients were treated on Novalis Tx system with cone-beam computed tomography imaging guidance. All the patient plans passed the RTOG criteria. The conformal index ranges from 0.99 to 1.12 for the planning target volume, and the biological equivalent dose for the planning target volume is overall 100 Gy. Critical structures (lung, spinal cord, brachial plexus, skin, and chest wall) also meet RTOG protocols or published data. A 6-month follow-up of one of the patients shows good local disease control. We have successfully implemented the MDCA technique into our clinic for the lung SBRT program. It shows that the MDCA is useful and efficient for the lung SBRT planning, with the plan quality meeting the RTOG protocols.

  7. Implementation of propeller, spiral, and variable density spiral methods for dynamic contrast enhanced magnetic resonance imaging

    NASA Astrophysics Data System (ADS)

    Ahunbay, Ergun Emin

    2001-09-01

    Previous studies showed that dynamic contrast enhanced magnetic resonance imaging (DCE-MRI) is a valuable tool for the prognosis and diagnosis of cancer, however it requires a tradeoff between temporal and spatial resolution. The ultimate goal of this dissertation is to compare the temporal performance of three methods (spiral, propeller and variable density spiral), given a certain spatial resolution requirement, for the DCE-MRI. These methods show distinction from the conventional MRI methods in their k-space coverage. Propeller and Variable Density Spiral methods use an approach of oversampling the center of k-space, updating the central 13-20% of the radial k-space more frequently than the peripheries. The reason for this is that most of the image data resides in the central part of k-space. Spiral method, on the other hand approaches the problem by updating the overall k-space as fast as possible, faster than the conventional methods. Comparison is performed mainly by computer simulations, where ground truth is known. In addition to computer simulations, these three methods are compared in- vivo, by tracking the DCE-MRI signal amplitude variation with time for each method on a healthy volunteer's liver. One limitation of the spiral and variable density spiral imaging methods is the effect of off-resonance frequencies on image quality. For these spiral based methods, long readout times are desired to have short overall imaging times and high temporal resolution. However, for long readout times, off resonance frequencies blur the images and reduce the spatial resolution. In this dissertation a new method is proposed which is less complicated than most other methods, and reaches an acceptable level of accuracy with less amount of CPU time compared to previously effective methods.

  8. Parallel implementation of 3D FFT with volumetric decomposition schemes for efficient molecular dynamics simulations

    NASA Astrophysics Data System (ADS)

    Jung, Jaewoon; Kobayashi, Chigusa; Imamura, Toshiyuki; Sugita, Yuji

    2016-03-01

    Three-dimensional Fast Fourier Transform (3D FFT) plays an important role in a wide variety of computer simulations and data analyses, including molecular dynamics (MD) simulations. In this study, we develop hybrid (MPI+OpenMP) parallelization schemes of 3D FFT based on two new volumetric decompositions, mainly for the particle mesh Ewald (PME) calculation in MD simulations. In one scheme, (1d_Alltoall), five all-to-all communications in one dimension are carried out, and in the other, (2d_Alltoall), one two-dimensional all-to-all communication is combined with two all-to-all communications in one dimension. 2d_Alltoall is similar to the conventional volumetric decomposition scheme. We performed benchmark tests of 3D FFT for the systems with different grid sizes using a large number of processors on the K computer in RIKEN AICS. The two schemes show comparable performances, and are better than existing 3D FFTs. The performances of 1d_Alltoall and 2d_Alltoall depend on the supercomputer network system and number of processors in each dimension. There is enough leeway for users to optimize performance for their conditions. In the PME method, short-range real-space interactions as well as long-range reciprocal-space interactions are calculated. Our volumetric decomposition schemes are particularly useful when used in conjunction with the recently developed midpoint cell method for short-range interactions, due to the same decompositions of real and reciprocal spaces. The 1d_Alltoall scheme of 3D FFT takes 4.7 ms to simulate one MD cycle for a virus system containing more than 1 million atoms using 32,768 cores on the K computer.

  9. Implementing molecular dynamics on hybrid high performance computers—Three-body potentials

    NASA Astrophysics Data System (ADS)

    Brown, W. Michael; Yamada, Masako

    2013-12-01

    The use of coprocessors or accelerators such as graphics processing units (GPUs) has become popular in scientific computing applications due to their low cost, impressive floating-point capabilities, high memory bandwidth, and low electrical power requirements. Hybrid high-performance computers, defined as machines with nodes containing more than one type of floating-point processor (e.g. CPU and GPU), are now becoming more prevalent due to these advantages. Although there has been extensive research into methods to use accelerators efficiently to improve the performance of molecular dynamics (MD) codes employing pairwise potential energy models, little is reported in the literature for models that include many-body effects. 3-body terms are required for many popular potentials such as MEAM, Tersoff, REBO, AIREBO, Stillinger-Weber, Bond-Order Potentials, and others. Because the per-atom simulation times are much higher for models incorporating 3-body terms, there is a clear need for efficient algorithms usable on hybrid high performance computers. Here, we report a shared-memory force-decomposition for 3-body potentials that avoids memory conflicts to allow for a deterministic code with substantial performance improvements on hybrid machines. We describe modifications necessary for use in distributed memory MD codes and show results for the simulation of water with Stillinger-Weber on the hybrid Titan supercomputer. We compare performance of the 3-body model to the SPC/E water model when using accelerators. Finally, we demonstrate that our approach can attain a speedup of 5.1 with acceleration on Titan for production simulations to study water droplet freezing on a surface.

  10. Implementing Molecular Dynamics on Hybrid High Performance Computers - Three-Body Potentials

    SciTech Connect

    Brown, W Michael; Yamada, Masako

    2013-01-01

    The use of coprocessors or accelerators such as graphics processing units (GPUs) has become popular in scientific computing applications due to their low cost, impressive floating-point capabilities, high memory bandwidth, and low electrical power re- quirements. Hybrid high-performance computers, defined as machines with nodes containing more than one type of floating-point processor (e.g. CPU and GPU), are now becoming more prevalent due to these advantages. Although there has been extensive research into methods to efficiently use accelerators to improve the performance of molecular dynamics (MD) employing pairwise potential energy models, little is reported in the literature for models that include many-body effects. 3-body terms are required for many popular potentials such as MEAM, Tersoff, REBO, AIREBO, Stillinger-Weber, Bond-Order Potentials, and others. Because the per-atom simulation times are much higher for models incorporating 3-body terms, there is a clear need for efficient algo- rithms usable on hybrid high performance computers. Here, we report a shared-memory force-decomposition for 3-body potentials that avoids memory conflicts to allow for a deterministic code with substantial performance improvements on hybrid machines. We describe modifications necessary for use in distributed memory MD codes and show results for the simulation of water with Stillinger-Weber on the hybrid Titan supercomputer. We compare performance of the 3-body model to the SPC/E water model when using accelerators. Finally, we demonstrate that our approach can attain a speedup of 5.1 with acceleration on Titan for production simulations to study water droplet freezing on a surface.

  11. Interaction of an argon plasma jet with a silicon wafer

    NASA Astrophysics Data System (ADS)

    Engelhardt, Max; Pothiraja, Ramasamy; Kartaschew, Konstantin; Bibinov, Nikita; Havenith, Martina; Awakowicz, Peter

    2016-04-01

    A filamentary discharge is ignited in an argon plasma jet under atmospheric pressure conditions. The gas discharge is characterized with voltage-current measurements, optical emission spectroscopy and an ICCD-camera with a high temporal resolution down to 10 ns. In the effluent of the plasma jet, filaments come into contact with the surface of a silicon wafer and modify it, namely etching traces are produced and microcrystals are deposited. These traces are studied with optical and electron microscopes. The material of the deposited microcrystals and the surface modifications of the silicon wafer are analyzed with Raman microspectroscopy. Amorphous silicon is found within the etching traces. The largest part of the deposited microcrystals are composed of nitratine (NaNO3) and some of them are calcite (CaCO3). Analyzing the possible reasons for the silicon wafer modifications we come to the conclusion that plasmoids, which are produced near the substrate surface by interaction with ionization waves, are a plausible explanation for the observed surface modifications of the silicon wafer.

  12. Ultra-Gradient Test Cavity for Testing SRF Wafer Samples

    SciTech Connect

    N.J. Pogue, P.M. McIntyre, A.I. Sattarov, C. Reece

    2010-11-01

    A 1.3 GHz test cavity has been designed to test wafer samples of superconducting materials. This mushroom shaped cavity, operating in TE01 mode, creates a unique distribution of surface fields. The surface magnetic field on the sample wafer is 3.75 times greater than elsewhere on the Niobium cavity surface. This field design is made possible through dielectrically loading the cavity by locating a hemisphere of ultra-pure sapphire just above the sample wafer. The sapphire pulls the fields away from the walls so the maximum field the Nb surface sees is 25% of the surface field on the sample. In this manner, it should be possible to drive the sample wafer well beyond the BCS limit for Niobium while still maintaining a respectable Q. The sapphire's purity must be tested for its loss tangent and dielectric constant to finalize the design of the mushroom test cavity. A sapphire loaded CEBAF cavity has been constructed and tested. The results on the dielectric constant and loss tangent will be presented

  13. A reclaiming process for solar cell silicon wafer surfaces.

    PubMed

    Pa, P S

    2011-01-01

    The low yield of epoxy film and Si3N4 thin-film deposition is an important factor in semiconductor production. A new design system using a set of three lamination-shaped electrodes as a machining tool and micro electro-removal as a precision reclaiming process of the Si3N4 layer and epoxy film removal from silicon wafers of solar cells surface is presented. In the current experiment, the combination of the small thickness of the anode and cathodes corresponds to a higher removal rate for the thin films. The combination of the short length of the anode and cathodes combined with enough electric power produces fast electroremoval. A combination of the small edge radius of the anode and cathodes corresponds to a higher removal rate. A higher feed rate of silicon wafers of solar cells combined with enough electric power produces fast removal. A precise engineering technology constructed a clean production approach for the removal of surface microstructure layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers from solar cells that can reduce pollution and lower cost. PMID:21446525

  14. Multi-wafer slicing with a fixed abrasive

    NASA Technical Reports Server (NTRS)

    Schmid, Frederick (Inventor); Khattak, Chandra P. (Inventor); Smith, Maynard B. (Inventor)

    1988-01-01

    A wafering machine having a multiplicity of wire cutting blades supported by a bladehead reciprocally moving past a workpiece supported by a holder that rocks about an axis perpendicular to the wires at a frequency less than the reciprocation of the bladehead.

  15. Crack propagation and fracture in silicon wafers under thermal stress

    PubMed Central

    Danilewsky, Andreas; Wittge, Jochen; Kiefl, Konstantin; Allen, David; McNally, Patrick; Garagorri, Jorge; Elizalde, M. Reyes; Baumbach, Tilo; Tanner, Brian K.

    2013-01-01

    The behaviour of microcracks in silicon during thermal annealing has been studied using in situ X-ray diffraction imaging. Initial cracks are produced with an indenter at the edge of a conventional Si wafer, which was heated under temperature gradients to produce thermal stress. At temperatures where Si is still in the brittle regime, the strain may accumulate if a microcrack is pinned. If a critical value is exceeded either a new or a longer crack will be formed, which results with high probability in wafer breakage. The strain reduces most efficiently by forming (hhl) or (hkl) crack planes of high energy instead of the expected low-energy cleavage planes like {111}. Dangerous cracks, which become active during heat treatment and may shatter the whole wafer, can be identified from diffraction images simply by measuring the geometrical dimensions of the strain-related contrast around the crack tip. Once the plastic regime at higher temperature is reached, strain is reduced by generating dislocation loops and slip bands and no wafer breakage occurs. There is only a small temperature window within which crack propagation is possible during rapid annealing. PMID:24046487

  16. National solar technology roadmap: Wafer-silicon PV

    SciTech Connect

    Sopori, Bhushan

    2007-06-01

    This report applies to all bulk-silicon-based PV technologies, including those based on Czochralski, multicrystalline, float-zone wafers, and melt-grown crystals that are 100 μm or thicker, such as ribbons, sheet, or spheral silicon.

  17. Virtual fab flow for wafer topography aware OPC

    NASA Astrophysics Data System (ADS)

    Stock, Hans-Jürgen; Bomholt, Lars; Krüger, Dietmar; Shiely, James; Song, Hua; Voznesenskiy, Nikolay

    2010-04-01

    Small feature sizes down to the current 45 nm node and precision requirements of patterning in 193 nm lithography as well as layers where the wafer stack does not allow any BARC require - not only correction of optical proximity (OPC) effects originating from mask topography and imaging system, but also correction of wafer topography proximity (WTPC) effects as well. In spite of wafer planarization process steps, wafer topography (proximity) effects induced by different optical properties of the patterned materials start playing a significant role, and correction techniques need to be applied in order to minimize the impact. In this paper, we study a methodology to create fast models intended for effective use in OPC and WTPC procedures. In order to be short we use the terms "OPCWTPC modeling" and "OPCWTPC models" through the paper although it would be more correctly to take the terms "mask synthesis modeling" and "mask synthesis models". A comprehensive data set is required to build a reliable OPC model. We present a "virtual fab" concept using extensive test pattern sets with both 1D and 2D structures to capture optical proximity effects as well as wafer topography effects. A rigorous lithography simulator taking into account exposure tool source maps, topographic mask effects as well as wafer topography is used to generate virtual measurement data, which are used for model calibration as well as for model validation. For model building, we use a two step approach: in a first step, an OPC model is built using test patterns on a planar, homogenous substrate; in a second step a WTPC model is calibrated, using results from simulated test patterns on shallow trench isolation (STI) layer. This approach allows building models from experimental data, including hybrid approaches where only experimental data from planar substrates is available and a corresponding OPC model for the planar case can be retrofitted with capabilities for correcting wafer topography effects. We

  18. Evolutionary dynamics of highly pathogenic avian influenza A/H5N1 HA clades and vaccine implementation in Vietnam

    PubMed Central

    Nguyen, Nga Thi Bich

    2014-01-01

    Based on hemagglutinin (HA) and neuraminidase (NA), influenza A virus is divided into 18 different HA (H1 to H18) and 11 NA types (N1 to N11), opening the possibility for reassortment between the HA and NA genes to generate new HxNy subtypes (where x could be any HA and y is any NA, possibly). In recent four years, since 2010, highly pathogenic avian influenza (HPAI) viruses of H5N1 subtype (HPAI A/H5N1) have become highly enzootic and dynamically evolved to form multiple H5 HA clades, particularly in China, Vietnam, Indonesia, Egypt, Cambodia, and Bangladesh. So far, after more than 10 years emerged in Vietnam (since late 2003), HPAI A/H5N1 is still posing a potential risk of causing outbreaks in poultry, with high frequency of annual endemics. Intragenic variation (referred to as antigenic drift) in HA (e.g., H5) has given rise to form numerous clades, typically marking the major timelines of the evolutionary status and vaccine application in each period. The dominance of genetically and antigenically diversified clade 2.3.2.1 (of subgroups a, b, c), clade 1.1 (1.1.1/1.1.2) and re-emergence of clade 7.1/7.2 at present, has urged Vietnam to the need for dynamically applied antigenicity-matching vaccines, i.e., the plan of importing Re-6 vaccine for use in 2014, in parallel use of Re-1/Re-5 since 2006. In this review, we summarize evolutionary features of HPAI A/H5N1 viruses and clade formation during recent 10 years (2004-2014). Dynamic of vaccine implementation in Vienam is also remarked. PMID:25003084

  19. The role of biodiversity for the carbon cycle: Implementation of functional diversity in a dynamic vegetation model

    NASA Astrophysics Data System (ADS)

    Sakschewski, Boris; Boit, Alice; von Bloh, Werner; Rammig, Anja; Thonicke, Kirsten

    2013-04-01

    Most dynamic global vegetation models (DGVMs) condense natural plant diversity to plant functional types (PFTs). A single PFT usually represents a whole biome, e.g. the PFT "tropical broadleaved evergreen tree" and its constant set of functional trait parameters covers entire regions in the model. This approach minimizes functional diversity and neglects the effects of functional diversity on the modeled vegetation and carbon dynamics. Our work aims to overcome this limitation and extend functional diversity in the vegetation model LPJmL to explore the role of biodiversity in climate change mitigation. Our approach improves the representation of biodiversity in the model by incorporating the natural ranges and eco-physiological interrelations of relevant plant traits. Empirical data on plant traits is provided by the TRY data base (www.try-db.org) and the ROBIN project (www.robinproject.info). A first sensitivity analysis revealed that simulated carbon stocks are very stable under a large range of trait combinations. However, several model output variables appeared highly sensitive to small changes of plant trait parameters and thus the introduction of trait ranges requires several improvements of the PFT concept of LPJmL. One possible way of improvement is to implement missing plant-trait tradeoffs, which will be used to simulate the growth of individual plants with flexible parameter combinations at the landscape scale. Our improved model will enable for the simulation of local competition and complementarity of individual plants which, according to their trait values and ranges, can then be categorized into a much broader variety of PFTs. This modeling approach will allow for investigating the role of bio- and functional diversity in the global carbon cycle as well as in regional vegetation dynamics.

  20. Bonding silicon-on-insulator to glass wafers for integrated bio-electronic circuits

    NASA Astrophysics Data System (ADS)

    Kim, Hyun S.; Blick, Robert H.; Kim, D. M.; Eom, C. B.

    2004-09-01

    We report a method for bonding silicon-on-insulator wafers onto glass wafers. After pre-cleaning the wafers by an ozone and ultraviolet exposure, followed by mega-sonic water rinse, the SOI wafers are bonded to glass wafers in a vacuum chamber. This is performed at a temperature of 400 °C under an applied voltage of 700 V. The interface between the glass and SOI wafer is tested mechanically and inspected by electron beam microscopy. Furthermore, we demonstrate removal of the silicon bulk layer after wafer bonding. The quality of the single crystalline Si thin film on the glass wafers has been verified by four-circle x-ray diffraction and scanning electron microscopy. This process will allow us the integration of thin-film electronics in biological sensor applications.

  1. A domain decomposition approach to implementing fault slip in finite-element models of quasi-static and dynamic crustal deformation

    USGS Publications Warehouse

    Aagaard, B.T.; Knepley, M.G.; Williams, C.A.

    2013-01-01

    We employ a domain decomposition approach with Lagrange multipliers to implement fault slip in a finite-element code, PyLith, for use in both quasi-static and dynamic crustal deformation applications. This integrated approach to solving both quasi-static and dynamic simulations leverages common finite-element data structures and implementations of various boundary conditions, discretization schemes, and bulk and fault rheologies. We have developed a custom preconditioner for the Lagrange multiplier portion of the system of equations that provides excellent scalability with problem size compared to conventional additive Schwarz methods. We demonstrate application of this approach using benchmarks for both quasi-static viscoelastic deformation and dynamic spontaneous rupture propagation that verify the numerical implementation in PyLith.

  2. In-situ detection method for wafer movement and micro-arc discharge around a wafer in plasma etching process using electrostatic chuck wafer stage with built-in acoustic emission sensor

    NASA Astrophysics Data System (ADS)

    Kasashima, Yuji; Tabaru, Tatsuo; Yasaka, Mitsuo; Kobayashi, Yoshikazu; Akiyama, Morito; Nabeoka, Natsuko; Motomura, Taisei; Sakamoto, Shingo; Uesugi, Fumihiko

    2014-01-01

    We report an electrostatic chuck (ESC) wafer stage with a built-in acoustic emission (AE) sensor for detecting anomalies occurring around a wafer during plasma etching. The built-in AE sensor detects acoustic waves caused by wafer movement and micro-arc discharge with high sensitivity, and identifies these anomalies based on the frequency characteristics of the waves. The results demonstrate the effectiveness of using an ESC wafer stage with a built-in AE sensor for in-situ anomaly detection, which can improve the production yield and overall equipment efficiency in large scale integrated circuit (LSI) manufacturing.

  3. Rinsing of wafers after wet processing: Simulation and experiments

    NASA Astrophysics Data System (ADS)

    Chiang, Chieh-Chun

    In semiconductor manufacturing, a large amount (50 billion gallons for US semiconductor fabrication plants in 2006) of ultrapure water (UPW) is used to rinse wafers after wet chemical processing to remove ionic contaminants on surfaces. Of great concern are the contaminants left in narrow (tens of nm), high-aspect-ratio (5:1 to 20:1) features (trenches, vias, and contact holes). The International Technology Roadmap for Semiconductors (ITRS) stipulates that ionic contaminant levels be reduced to below ˜ 10 10 atoms/cm2. Understanding the bottlenecks in the rinsing process would enable conservation of rinse water usage. A comprehensive process model has been developed on the COMSOL platform to predict the dynamics of rinsing of narrow structures on patterned SiO 2 substrates initially cleaned with NH4OH. The model considers the effect of various mass-transport mechanisms, including convection and diffusion/dispersion, which occur simultaneously with various surface phenomena, such as adsorption and desorption of impurities. The influences of charged species in the bulk and on the surface, and their induced electric field that affect both transport and surface interactions, have been addressed. Modeling results show that the efficacy of rinsing is strongly influenced by the rate of desorption of adsorbed contaminants, mass transfer of contaminants from the mouth of the feature to the bulk liquid, and the trench aspect ratio. Detection of the end point of rinsing is another way to conserve water used for rinsing after wet processing. The applicability of electrochemical impedance spectroscopy (EIS) to monitor rinsing of Si processed in HF with and without copper contaminant was explored. In the first study, the effect of the nature of surface state (flat band, depletion, or accumulation) of silicon on rinsing rate was investigated. The experimental results show that the state of silicon could affect rinsing kinetics through modulation of ion adsorption. In the second

  4. Optimal mask characterization by Surrogate Wafer Print (SWaP) method

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.; Hoellein, Ingo; Peters, Jan Hendrick; Ackmann, Paul; Connolly, Brid; West, Craig

    2008-10-01

    Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scope of designs and in absolute complexity, the inevitable partnership between wafer lithographers and mask makers has strengthened as well. This is reflected in the jointly owned mask facilities and device manufacturers' continued maintenance of fully captive mask shops which foster the closer mask-litho relationships. However, while some device manufacturers have leveraged this to optimize mask specifications before the mask is built and, therefore, improve mask yield and cost, the opportunity for post-fabrication partnering on mask characterization is more apparent and compelling. The Advanced Mask Technology Center (AMTC) has been investigating the concept of assessing how a mask images, rather than the mask's physical attributes, as a technically superior and lower-cost method to characterize a mask. The idea of printing a mask under its intended imaging conditions, then characterizing the imaged wafer as a surrogate for traditional mask inspections and measurements represents the ultimate method to characterize a mask's performance, which is most meaningful to the user. Surrogate wafer print (SWaP) is already done as part of leading-edge wafer fab mask qualification to validate defect and dimensional performance. In the past, the prospect of executing this concept has generally been summarily discarded as technically untenable and logistically intractable. The AMTC published a paper at BACUS 2007 successfully demonstrating the performance of SWaP for the characterization of defects as an alternative to traditional mask inspection [1]. It showed that this concept is not only feasible, but, in some cases, desirable. This paper expands on last year's work at AMTC to assess the full implementation of SWaP as an

  5. Wafer bonding process for building MEMS devices

    NASA Astrophysics Data System (ADS)

    Pabo, Eric F.; Meiler, Josef; Matthias, Thorsten

    2014-06-01

    The technology for the measurement of colour rendering and colour quality is not new, but many parameters related to this issue are currently changing. A number of standard methods were developed and are used by different specialty areas of the lighting industry. CIE 13.3 has been the accepted standard implemented by many users and used for many years. Light-emitting Diode (LED) technology moves at a rapid pace and, as this lighting source finds wider acceptance, it appears that traditional colour-rendering measurement methods produce inconsistent results. Practical application of various types of LEDs yielded results that challenged conventional thinking regarding colour measurement of light sources. Recent studies have shown that the anatomy and physiology of the human eye is more complex than formerly accepted. Therefore, the development of updated measurement methodology also forces a fresh look at functioning and colour perception of the human eye, especially with regard to LEDs. This paper includes a short description of the history and need for the measurement of colour rendering. Some of the traditional measurement methods are presented and inadequacies are discussed. The latest discoveries regarding the functioning of the human eye and the perception of colour, especially when LEDs are used as light sources, are discussed. The unique properties of LEDs when used in practical applications such as luminaires are highlighted.

  6. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    NASA Astrophysics Data System (ADS)

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, Sanghyeon; Choi, Won Jun

    2016-02-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  7. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    PubMed Central

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-01-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates. PMID:26864968

  8. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.

    PubMed

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-01-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called "Si photonics"). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates. PMID:26864968

  9. Method for implementation of back-illuminated CMOS or CCD imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor)

    2008-01-01

    A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

  10. Wafer-scale process and materials optimization in cross-flow atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lecordier, Laurent Christophe

    The exceptional thickness control (atomic scale) and conformality (uniformity over nanoscale 3D features) of atomic layer deposition (ALD) has made it the process of choice for numerous applications from microelectronics to nanotechnology, and for a wide variety of ALD processes and resulting materials. While its benefits derive from self-terminated chemisorbed reactions of alternatively supplied gas precursors, identifying a suitable process window in which ALD's benefits are realized can be a challenge, even in favorable cases. In this work, a strategy exploiting in-situ gas phase sensing in conjunction with ex-situ measurements of the film properties at the wafer scale is employed to explore and optimize the prototypical Al2O3 ALD process. Downstream mass-spectrometry is first used to rapidly identify across the [H2O x Al(CH3)3] process space the exposure conditions leading to surface saturation. The impact of precursor doses outside as well as inside the parameter space outlined by mass-spectrometry is then investigated by characterizing film properties across 100 mm wafer using spectroscopic ellipsometry, CV and IV electrical characterization, XPS and SIMS. Under ideal dose conditions, excellent thickness uniformity was achieved (1sigma/mean<1%) in conjunction with a deposition rate and electrical properties in good agreement with best literature data. As expected, under-dosing of precursor results in depletion of film growth in the flow direction across the wafer surface. Since adsorbed species are reactive with respect to subsequent dose of the complementary precursor, such depletion magnifies non-uniformities as seen in the cross-flow reactor, thereby decorating deviations from a suitable ALD process recipe. Degradation of the permittivity and leakage current density across the wafer was observed though the film composition remained unchanged. Upon higher water dose in the over-exposure regime, deposition rates increased by up to 40% while the uniformity

  11. Formation and combustion characteristics of elephantgrass and energycane wafers

    NASA Astrophysics Data System (ADS)

    Mofleh, Mohamad I.

    Elephantgrass (Pennisetum purpureum Schum.) and energycane (Saccharum Spp.) are two cane type grasses. These are tall-growing perennial bunchgrasses that produce long hardened stems and grow in the tropics and subtropics. Traditionally, they have been used for forage and, in some regions, have been randomly burned on fields or disposed of uselessly. However, these plants have high dry matter yield and, thus, are excellent candidates as energy crops. Elephantgrass and energycane have been used for direct combustion in their loose form in large-scale applications. Several problems, many of which were attributed to their low bulk density, were encountered with using the materials. Consequently, this project was initiated to investigate the formation and combustion characteristics of the two materials in the form of small compact units called wafers. A hydraulic press that applied axial stresses on the material in four different dies was used. A load cell and a displacement transducer were utilized to measure the stresses and material detection. Wafer quality was evaluated using a tumbler built according to the American Society of Agricultural Engineers standards. In addition, a small stove was built to test wafer combustion. Thermocouples were used to measure temperatures during combustion. All the data gathered was transferred to a computer using a data acquisition system. It was found that the stress-deformation and stress-density relationships of elephantgrass and energycane were of exponential nature. Compaction energy required, which was calculated from the area under the force-deformation curves, ranged from 0.1 to 0.3% of their energy content. It was also found that wafer quality (durability) was mainly a function of wafer size and its final (relaxed) density in addition to material stem-to-leaf ratio and its crude protein content. Wafers possessed poor ignition quality but once ignited, they burned satisfactorily. The results indicated that sufficient and

  12. Height inspection of wafer bumps without explicit 3D reconstruction

    NASA Astrophysics Data System (ADS)

    Dong, Mei; Chung, Ronald; Zhao, Yang; Lam, Edmund Y.

    2006-02-01

    The shrunk dimension of electronic devices leads to more stringent requirement on process control and quality assurance of their fabrication. For instance, direct die-to-die bonding requires placement of solder bumps not on PCB but on the wafer itself. Such wafer solder bumps, which are much miniaturized from the counterparts on PCB, still need to have their heights meet the specification, or else the electrical connection could be compromised, or the dies be crushed, or even the manufacturing equipments be damaged. Yet the tiny size, typically tens of microns in diameter, and the textureless and mirror nature of the bumps pose great challenge to the 3D inspection process. This paper addresses how a large number of such wafer bumps could have their heights massively checked against the specification. We assume ball bumps in this work. We propose a novel inspection measure about the collection of bump heights that possesses these advantages: (1) it is sensitive to global and local disturbances to the bump heights, thus serving the bump height inspection purpose; (2) it is invariant to how individual bumps are locally displaced against one another on the substrate surface, thus enduring 2D displacement error in soldering the bumps onto the wafer substrate; and (3) it is largely invariant to how the wafer itself is globally positioned relative to the imaging system, thus having tolerance to repeatability error in wafer placement. This measure makes use of the mirror nature of the bumps, which used to cause difficulty in traditional inspection methods, to capture images of two planes. One contains the bump peaks and the other corresponds to the substrate. With the homography matrices of these two planes and fundamental matrix of the camera, we synthesize a matrix called Biplanar Disparity Matrix. This matrix can summarize the bumps' heights in a fast and direct way without going through explicit 3D reconstruction. We also present a design of the imaging and

  13. The PEPR GeneChip data warehouse, and implementation of a dynamic time series query tool (SGQT) with graphical interface.

    PubMed

    Chen, Josephine; Zhao, Po; Massaro, Donald; Clerch, Linda B; Almon, Richard R; DuBois, Debra C; Jusko, William J; Hoffman, Eric P

    2004-01-01

    Publicly accessible DNA databases (genome browsers) are rapidly accelerating post-genomic research (see http://www.genome.ucsc.edu/), with integrated genomic DNA, gene structure, EST/ splicing and cross-species ortholog data. DNA databases have relatively low dimensionality; the genome is a linear code that anchors all associated data. In contrast, RNA expression and protein databases need to be able to handle very high dimensional data, with time, tissue, cell type and genes, as interrelated variables. The high dimensionality of microarray expression profile data, and the lack of a standard experimental platform have complicated the development of web-accessible databases and analytical tools. We have designed and implemented a public resource of expression profile data containing 1024 human, mouse and rat Affymetrix GeneChip expression profiles, generated in the same laboratory, and subject to the same quality and procedural controls (Public Expression Profiling Resource; PEPR). Our Oracle-based PEPR data warehouse includes a novel time series query analysis tool (SGQT), enabling dynamic generation of graphs and spreadsheets showing the action of any transcript of interest over time. In this report, we demonstrate the utility of this tool using a 27 time point, in vivo muscle regeneration series. This data warehouse and associated analysis tools provides access to multidimensional microarray data through web-based interfaces, both for download of all types of raw data for independent analysis, and also for straightforward gene-based queries. Planned implementations of PEPR will include web-based remote entry of projects adhering to quality control and standard operating procedure (QC/SOP) criteria, and automated output of alternative probe set algorithms for each project (see http://microarray.cnmcresearch.org/pgadatatable.asp). PMID:14681485

  14. Implementation of a research-based lab module in a high school chemistry curriculum: A study of classroom dynamics

    NASA Astrophysics Data System (ADS)

    Pilarz, Matthew

    For this study, a research-based lab module was implemented in two high school chemistry classes for the purpose of examining classroom dynamics throughout the process of students completing the module. A research-based lab module developed for use in undergraduate laboratories by the Center for Authentic Science Practice in Education (CASPiE) was modified and implemented in two high school settings. This module consisted of four phases: Skill Building, Experimental Design, Independent Research, and Results and Poster Presentation. Classroom dynamics were studied by considering the students' and teachers' perceptions of their experiences during the completion of the module and by examining the interactions between students and teachers that took place throughout the module. The results reveal that there are shifts in classroom dynamics throughout the four phases of the module. In the Skill Building phase there was a great deal of dependence on the teacher for help in completing tasks. However, there is a slight contrast to what the students and teachers reported about their experiences during this phase. The teachers describe the students as being very dependent on them and asking questions constantly during the Skill Building experiments. The students report that they tried to figure out their problems with their lab partners and students in other lab groups before asking the teacher for help. The teachers perceived that students came to them immediately for help and did not realize that students were coming to them as sort of a last resort when they could not solve problems on their own. In the Experimental Design phase the students and teachers both report that the lab groups were working together as groups to design their experiments, and rarely had interactions with anyone outside of their lab group. For the Independent Research phase both students and teachers report that lab groups worked very independently of any outside assistance and that they began to

  15. Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity

    NASA Astrophysics Data System (ADS)

    Olson, Kurt A.; Kotecki, David E.; Ricci, Anthony J.; Lassig, Stephan E.; Husain, Anwar

    1995-02-01

    The resulting temperature distribution of a silicon wafer held by an electrostatic chuck (ESC) in an electron-cyclotron-resonance chemical vapor deposition (ECR-CVD) reactor is characterized and modeled. The effects of the clamping voltage VESC, pressure between the ESC and wafer PHe, and the surface finish and pattern on the ESC are investigated. Heat transfer coefficients between the wafer and various ESCs are determined experimentally. A model is developed to predict the temperature distribution at the surface of the wafer, and used to explain the experimentally observed temperature variations both within wafer and between different chucks. The model is then used to aid in the design of an ESC which provides improved temperature uniformity at the wafer surface. The results of this study indicate: (a) the thermal resistances across the interface between the wafer and ESC control both the absolute wafer temperature and the wafer temperature uniformity; (b) the surface roughness of the ESC and the size of the ``contact'' regions are major design factors controlling the absolute temperature of the wafer—the temperature can be adjusted by varying the value of VESC and fine tuned by adjusting the value of PHe; (c) the nonuniform temperature distribution across the wafer surface is dictated by the surface pattern on the ESC, the variation in surface roughness, and the size of the ESC relative to the wafer; (d) wafer temperature variations from chuck to chuck are reduced by controlling the surface finish of the ESC and by ensuring that PHe is a dominant heat transfer mechanism; and (e) maximum uniformity in the temperature of the wafer is obtained when the radius of the ESC is matched as closely as possible to that of the wafer. We have shown that numerical heat transfer models can be used to optimize the geometry of the ESC to provide a uniform distribution of temperature across the surface of the wafer.

  16. Wafer-level packaging with compression-controlled seal ring bonding

    SciTech Connect

    Farino, Anthony J

    2013-11-05

    A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

  17. A gas chromatographic air analyzer fabricated on a silicon wafer

    NASA Technical Reports Server (NTRS)

    Terry, S. C.; Jerman, J. H.; Angell, J. B.

    1979-01-01

    A miniature gas analysis system has been built based on the principles of gas chromatography (GC). The major components are fabricated in silicon using photolithography and chemical etching techniques, which allows size reductions of nearly three orders of magnitude compared to conventional laboratory instruments. The chromatography system consists of a sample injection valve and a 1.5-m-long separating capillary column, which are fabricated on a substrate silicon wafer. The output thermal conductivity detector is separately batch fabricated and integrably mounted on the substrate wafer. The theory of gas chromatography has been used to optimize the performance of the sensor so that separations of gaseous hydrocarbon mixtures are performed in less than 10 s. The system is expected to find application in the areas of portable ambient air quality monitors, implanted biological experiments, and planetary probes.

  18. A silicon wafer packaging solution for HB-LEDs

    NASA Astrophysics Data System (ADS)

    Murphy, Tom; Weichel, Steen; Isaacs, Steven; Kuhmann, Jochen

    2007-09-01

    In this paper we present HyLED, a silicon wafer packaging solution for high-brightness LEDs. The associated technology is batch micro-machining/metallisation processing of silicon wafers allowing significant reduction of the final device size. The presented package is multi-functional where the micro-machined cavity acts as reflector, thermal conductor and reservoir for the silicone/colour conversion substance. The base material, silicon, has excellent mechanical and thermal properties and enables direct integration of intelligence. We present customer specific solutions, open tool samples and performance data for optical and thermal parameters and reliability testing. Thermal resistance values of R<5 K/W, junction-to-board are demonstrated.

  19. Wafer level reliability for high-performance VLSI design

    NASA Technical Reports Server (NTRS)

    Root, Bryan J.; Seefeldt, James D.

    1987-01-01

    As very large scale integration architecture requires higher package density, reliability of these devices has approached a critical level. Previous processing techniques allowed a large window for varying reliability. However, as scaling and higher current densities push reliability to its limit, tighter control and instant feedback becomes critical. Several test structures developed to monitor reliability at the wafer level are described. For example, a test structure was developed to monitor metal integrity in seconds as opposed to weeks or months for conventional testing. Another structure monitors mobile ion contamination at critical steps in the process. Thus the reliability jeopardy can be assessed during fabrication preventing defective devices from ever being placed in the field. Most importantly, the reliability can be assessed on each wafer as opposed to an occasional sample.

  20. Chemical method for producing smooth surfaces on silicon wafers

    SciTech Connect

    Yu, Conrad

    2003-01-01

    An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

  1. Implementation and characterization of a quartz tuning fork based probe consisted of discrete resonators for dynamic mode atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Akiyama, Terunobu; de Rooij, Nicolaas F.; Staufer, Urs; Detterbeck, Manfred; Braendlin, Dominik; Waldmeier, Simon; Scheidiger, Martin

    2010-06-01

    The quartz tuning fork based probe {e.g., Akiyama et al. [Appl. Surf. Sci. 210, 18 (2003)]}, termed "A-Probe," is a self-sensing and self-actuating (exciting) probe for dynamic mode atomic force microscope (AFM) operation. It is an oscillatory force sensor consisting of the two discrete resonators. This paper presents the investigations on an improved A-Probe: its batch fabrication and assembly, mounting on an AFM head, electrical setup, characterization, and AFM imaging. The fundamental features of the A-Probe are electrically and optically characterized in "approach-withdraw" experiments. Further investigations include the frequency response of an A-Probe to small mechanical vibrations externally applied to the tip and the effective loading force yielding between the tip and the sample during the periodic contact. Imaging of an electronic chip, a compact disk stamper, carbon nanotubes, and Si beads is demonstrated with this probe at ambient conditions in the so-called frequency modulation mode. A special probe substrate, which can snap on a receptacle fixed on an AFM head, and a special holder including a preamplifier electronic are introduced. We hope that the implementation and characterization of the A-Probe described in this paper will provide hints for new scanning probe techniques.

  2. Implementation of an integrated op-amp based chaotic neuron model and observation of its chaotic dynamics

    SciTech Connect

    Jung, Jinwoo; Lee, Jewon; Song, Hanjung

    2011-03-15

    This paper presents a fully integrated circuit implementation of an operational amplifier (op-amp) based chaotic neuron model with a bipolar output function, experimental measurements, and analyses of its chaotic behavior. The proposed chaotic neuron model integrated circuit consists of several op-amps, sample and hold circuits, a nonlinear function block for chaotic signal generation, a clock generator, a nonlinear output function, etc. Based on the HSPICE (circuit program) simulation results, approximated empirical equations for analyses were formulated. Then, the chaotic dynamical responses such as bifurcation diagrams, time series, and Lyapunov exponent were calculated using these empirical equations. In addition, we performed simulations about two chaotic neuron systems with four synapses to confirm neural network connections and got normal behavior of the chaotic neuron such as internal state bifurcation diagram according to the synaptic weight variation. The proposed circuit was fabricated using a 0.8-{mu}m single poly complementary metal-oxide semiconductor technology. Measurements of the fabricated single chaotic neuron with {+-}2.5 V power supplies and a 10 kHz sampling clock frequency were carried out and compared with the simulated results.

  3. Sputter deposition of SiC coating on silicon wafers

    NASA Technical Reports Server (NTRS)

    Robson, M. T.; Blue, C. A.; Warrier, S. G.; Lin, R. Y.

    1992-01-01

    A study is conducted of the effect of substrate temperature during coating on the properties of coated SiC films on Si wafers, using a scratch test technique. While specimen temperature during coating has little effect on deposition rate, it significantly affects the durability of the coating. Scratch test damage to both film coating and substrate decreased with increasing deposition temperature, perhaps due to the rapid diffusion of the deposited atoms.

  4. Wafer-scale plasmonic and photonic crystal sensors

    NASA Astrophysics Data System (ADS)

    George, M. C.; Liu, J.-N.; Farhang, A.; Williamson, B.; Black, M.; Wangensteen, T.; Fraser, J.; Petrova, R.; Cunningham, B. T.

    2015-08-01

    200 mm diameter wafer-scale fabrication, metrology, and optical modeling results are reviewed for surface plasmon resonance (SPR) sensors based on 2-D metallic nano-dome and nano-hole arrays (NHA's) as well as 1-D photonic crystal sensors based on a leaky-waveguide mode resonance effect, with potential applications in label free sensing, surface enhanced Raman spectroscopy (SERS), and surface-enhanced fluorescence spectroscopy (SEFS). Potential markets include micro-arrays for medical diagnostics, forensic testing, environmental monitoring, and food safety. 1-D and 2-D nanostructures were fabricated on glass, fused silica, and silicon wafers using optical lithography and semiconductor processing techniques. Wafer-scale optical metrology results are compared to FDTD modeling and presented along with application-based performance results, including label-free plasmonic and photonic crystal sensing of both surface binding kinetics and bulk refractive index changes. In addition, SEFS and SERS results are presented for 1-D photonic crystal and 2-D metallic nano-array structures. Normal incidence transmittance results for a 550 nm pitch NHA showed good bulk refractive index sensitivity, however an intensity-based design with 665 nm pitch was chosen for use as a compact, label-free sensor at both 650 and 632.8 nm wavelengths. The optimized NHA sensor gives an SPR shift of about 480 nm per refractive index unit when detecting a series of 0-40% glucose solutions, but according to modeling shows about 10 times greater surface sensitivity when operating at 532 nm. Narrow-band photonic crystal resonance sensors showed quality factors over 200, with reasonable wafer-uniformity in terms of both resonance position and peak height.

  5. High resolution inspection with wafer plane die: database defect detection

    NASA Astrophysics Data System (ADS)

    Hess, Carl; Wihl, Mark; Shi, Rui-fang; Xiong, Yalin; Pang, Song

    2008-10-01

    High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yieldlimiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements. Historically, RAPID products have enabled detection of both classes of these defects. The newlydeveloped Wafer Plane Inspection (WPI) detector technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. Wafer Plane Inspection accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. This has the effect of reducing sensitivity to non-printing defects while enabling higher sensitivity focused in high MEEF areas where small reticle defects still yield significant printing defects on wafers. This approach has several important features. The ability to ignore non-printing defects and to apply additional effective sensitivity in high MEEF areas enables advanced node development. In addition, the modeling allows the inclusion of important polarization effects that occur in the resist for high NA operation. This allows for the results to better match wafer print results compared to alternate approaches. Finally, the simulation easily allows for the application of arbitrary illumination profiles. With this approach, users of WPI can make use of unique or custom scanner illumination profiles. This allows the more precise modeling of profiles without inspection system hardware modification or loss of company intellectual property. A previous paper [1] introduced WPI in D:D mode. This paper examines the operation and results for WPI in Die:Database mode.

  6. Cost of Czochralski wafers as a function of diameter

    SciTech Connect

    Leipold, M.H.; Radics, C.; Kachare, A.

    1980-02-15

    The impact of diameter in the range of 10 to 15 cm on the cost of wafers sliced from Czochralski ingots is analyzed. Increasing silicon waste and decreasing ingot cost with increasing ingot size are estimated along with projected costs. Results indicate a small but continuous decrease in sheet cost with increasing ingot size in this size range. Sheet costs including silicon are projected to be $50 to $60/m/sup 2/ (1980 $) depending upon technique used.

  7. Wafer-level radiometric performance testing of uncooled microbolometer arrays

    NASA Astrophysics Data System (ADS)

    Dufour, Denis G.; Topart, Patrice; Tremblay, Bruno; Julien, Christian; Martin, Louis; Vachon, Carl

    2014-03-01

    A turn-key semi-automated test system was constructed to perform on-wafer testing of microbolometer arrays. The system allows for testing of several performance characteristics of ROIC-fabricated microbolometer arrays including NETD, SiTF, ROIC functionality, noise and matrix operability, both before and after microbolometer fabrication. The system accepts wafers up to 8 inches in diameter and performs automated wafer die mapping using a microscope camera. Once wafer mapping is completed, a custom-designed quick insertion 8-12 μm AR-coated Germanium viewport is placed and the chamber is pumped down to below 10-5 Torr, allowing for the evaluation of package-level focal plane array (FPA) performance. The probe card is electrically connected to an INO IRXCAM camera core, a versatile system that can be adapted to many types of ROICs using custom-built interface printed circuit boards (PCBs). We currently have the capability for testing 384x288, 35 μm pixel size and 160x120, 52 μm pixel size FPAs. For accurate NETD measurements, the system is designed to provide an F/1 view of two rail-mounted blackbodies seen through the Germanium window by the die under test. A master control computer automates the alignment of the probe card to the dies, the positioning of the blackbodies, FPA image frame acquisition using IRXCAM, as well as data analysis and storage. Radiometric measurement precision has been validated by packaging dies measured by the automated probing system and re-measuring the SiTF and Noise using INO's pre-existing benchtop system.

  8. A photo-sensor on thin polysilicon membrane embedded in wafer level package LED

    NASA Astrophysics Data System (ADS)

    Kim, Jin Kwan; Lee, Hee Chul

    2012-06-01

    A wafer level packaging LED with photo-sensor which is fabricated on thin poly-silicon membrane located on the corner of silicon cavity is presented in this paper. The wafer substrate was fabricated with (100) orientation silicon wafer and a cavity was etched on the top of the wafer with wet chemical anisotropic etching process for mounting a LED chip. A thin polysilicon membrane was fabricated on the corner of the cavity and a MSM (Metal Semiconductor Metal) type photo-sensor was fabricated on the thin polysilicon membrane. The photo-sensor fabrication and LED packaging were completed on wafer level. The embedded photo-sensor in a wafer level packaging LED is designed to measure light intensity of a LED. The membrane structure photo-sensor can sense the light of the mounted LED directly, so it can measure accurate light intensity of the wafer level packing LED.

  9. Physical mechanisms of copper-copper wafer bonding

    SciTech Connect

    Rebhan, B.; Hingerl, K.

    2015-10-07

    The study of the physical mechanisms driving Cu-Cu wafer bonding allowed for reducing the bonding temperatures below 200 °C. Metal thermo-compression Cu-Cu wafer bonding results obtained at such low temperatures are very encouraging and suggest that the process is possible even at room temperature if some boundary conditions are fulfilled. Sputtered (PVD) and electroplated Cu thin layers were investigated, and the analysis of both metallization techniques demonstrated the importance of decreasing Cu surface roughness. For an equal surface roughness, the bonding temperature of PVD Cu wafers could be even further reduced due to the favorable microstructure. Their smaller grain size enhances the length of the grain boundaries (observed on the surface prior bonding), acting as efficient mass transfer channels across the interface, and hence the grains are able to grow over the initial bonding interface. Due to the higher concentration of random high-angle grain boundaries, this effect is intensified. The model presented is explaining the microstructural changes based on atomic migration, taking into account that the reduction of the grain boundary area is the major driving force to reduce the Gibbs free energy, and predicts the subsequent microstructure evolution (grain growth) during thermal annealing.

  10. Method for making circular tubular channels with two silicon wafers

    DOEpatents

    Yu, C.M.; Hui, W.C.

    1996-11-19

    A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si{sub 3}N{sub 4}) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO{sub 3}/CH{sub 3}COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary. 11 figs.

  11. Method for making circular tubular channels with two silicon wafers

    DOEpatents

    Yu, Conrad M.; Hui, Wing C.

    1996-01-01

    A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si.sub.3 N.sub.4) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO.sub.3 /CH.sub.3 COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary.

  12. Wafer-scale aluminum plasmonics for fluorescence based biodetection

    NASA Astrophysics Data System (ADS)

    Farhang, Arash; George, Matthew C.; Williamson, Brent; Black, Mike; Wangensteen, Ted; Fraser, James; Petrova, Rumyana; Prestgard, Kent

    2015-08-01

    Moxtek has leveraged existing capabilities in wafer-scale patterning of sub-wavelength wire grid polarizers into the fabrication of 1D and 2D periodic aluminum plasmonic structures. This work will discuss progress in 200 mm diameter wafer-scale fabrication, with detailed emphasis within the realm of microarray based fluorescence detection. Aluminum nanohole arrays in a hexagonal lattice are first numerically investigated. The nanohole array geometry and periodicity are specifically tuned to coincide both with the excitation of the fluorophore Cy3, and to provide a high field enhancement within the nanoholes where labeled biomolecules are captured. This is accomplished through numerical modelling, nanofabrication, SEM imaging, and optical characterization. A 200mm diameter wafer, patterned with the optically optimized nanohole array, is cut into standard 1x3 inch microscope slide pieces and then subsequently printed with various antigens at 9 different concentrations. A sandwich bioassay is then carried out, using the corresponding conjugate antibodies in order to demonstrate specificity. The nanohole array exhibit a 3-4 times total fluorescence enhancement of Cy3, when compared to a leading commercial microarray glass slide.

  13. Wettability investigating on the wet etching textured multicrystalline silicon wafer

    NASA Astrophysics Data System (ADS)

    Liu, Xiangju; Niu, Yuchao; Zhai, Tongguang; Ma, Yuying; Zhen, Yongtai; Ma, Xiaoyu; Gao, Ying

    2016-02-01

    In order to investigate the wettability properties of multicrystalline silicon (mc-Si), the different surface structures were fabricated on the as-cut p-type multi-wire slurry sawn mc-Si wafers, such as as-cut, polished and etched in various acid solutions. The contact angles and the XRD spectra of these samples were measured. It was noted that both the surface structures and the use of surfactant, such as Tween 80, made a stronger effect on wettability of the Si wafer. Due to the lipophilic groups of Tween 80 combined with the Si atoms while the hydrophilic groups of it were outward, a lipophilic surface of Si changed into a hydrophilic one and the rougher the surface, the stronger the hydrophily. Thus, it is feasible to add an appropriate surfactant into the etching solution during black-Si wafer fabrication for solar cells. In addition, different crystal plains of Si had different dangling bond density, so that their surface energies were different. A surface with higher surface energy could attract more water atoms and its wettability was better. However, the effect of crystal plain on the surface wettability was much weaker than surface morphology.

  14. Process Control By Automated In-Process Wafer Inspection

    NASA Astrophysics Data System (ADS)

    Harris, K. L.; Sandland, P.; Singleton, R. M.

    1984-06-01

    This is the introduction of new technology developed specifically for the inprocess pattern inspection and measurement of very large scale integrated (VLSI) wafers. There is a current need for significant improvements in pattern inspection instrumentation in order to tighten process control and achieve more competitive yields and therefore die costs. For the tedious and detailed task of pattern inspection and measurement, automation is the indicated solution. The future of computerized manufacturing requires, most fundamentally, the automation of the instrumentation and control function. In this paper, a system, designated the KLA 2020 Wafer Inspector, is described which incorporates the basic functions required to measure variations in the patterning process: linear and area dimensional measurements, registration error measurement, comparison for defects down to submicron in size. It is capable of inspecting in-process wafers in order to gain the most immediate process feedback. The speed with which it does each of these tests, less than a second, allows significant increases in sample size and therefore statistical control. It is this technology which will make computer-controlled photo processing possible.

  15. Very large scale heterogeneous integration (VLSHI) and wafer-level vacuum packaging for infrared bolometer focal plane arrays

    NASA Astrophysics Data System (ADS)

    Forsberg, Fredrik; Roxhed, Niclas; Fischer, Andreas C.; Samel, Björn; Ericsson, Per; Hoivik, Nils; Lapadatu, Adriana; Bring, Martin; Kittilsland, Gjermund; Stemme, Göran; Niklaus, Frank

    2013-09-01

    Imaging in the long wavelength infrared (LWIR) range from 8 to 14 μm is an extremely useful tool for non-contact measurement and imaging of temperature in many industrial, automotive and security applications. However, the cost of the infrared (IR) imaging components has to be significantly reduced to make IR imaging a viable technology for many cost-sensitive applications. This paper demonstrates new and improved fabrication and packaging technologies for next-generation IR imaging detectors based on uncooled IR bolometer focal plane arrays. The proposed technologies include very large scale heterogeneous integration for combining high-performance, SiGe quantum-well bolometers with electronic integrated read-out circuits and CMOS compatible wafer-level vacuum packing. The fabrication and characterization of bolometers with a pitch of 25 μm × 25 μm that are arranged on read-out-wafers in arrays with 320 × 240 pixels are presented. The bolometers contain a multi-layer quantum well SiGe thermistor with a temperature coefficient of resistance of -3.0%/K. The proposed CMOS compatible wafer-level vacuum packaging technology uses Cu-Sn solid-liquid interdiffusion (SLID) bonding. The presented technologies are suitable for implementation in cost-efficient fabless business models with the potential to bring about the cost reduction needed to enable low-cost IR imaging products for industrial, security and automotive applications.

  16. Output blue light evaluation for phosphor based smart white LED wafer level packages.

    PubMed

    Kolahdouz, Zahra; Rostamian, Ali; Kolahdouz, Mohammadreza; Ma, Teng; van Zeijl, Henk; Zhang, Kouchi

    2016-02-22

    This study presents a blue light detector for evaluating the output light of phosphor based white LED package. It is composed of a silicon stripe-shaped photodiode designed and implemented in a 2 μm BiCMOS process which can be used for wafer level integration of different passive and active devices all in just 5 lithography steps. The final device shows a high selectivity to blue light. The maximum responsivity at 480 nm is matched with the target blue LED illumination. The designed structure have better responsivity compared to simple photodiode structure due to reducing the effect of dead layer formation close to the surface because of implantation. It has also a two-fold increase in the responsivity and quantum efficiency compared to previously similar published sensors. PMID:26906985

  17. Investigation of optimized wafer sampling with multiple integrated metrology modules within photolithography equipment

    NASA Astrophysics Data System (ADS)

    Taylor, Ted L.; Makimura, Eri

    2007-03-01

    Micron Technology, Inc., explores the challenges of defining specific wafer sampling scenarios for users of multiple integrated metrology modules within a Tokyo Electron Limited (TEL) CLEAN TRACK TM LITHIUS TM. With the introduction of integrated metrology (IM) into the photolithography coater/developer, users are faced with the challenge of determining what type of data is required to collect to adequately monitor the photolithography tools and the manufacturing process. Photolithography coaters/developers have a metrology block that is capable of integrating three metrology modules into the standard wafer flow. Taking into account the complexity of multiple metrology modules and varying across-wafer sampling plans per metrology module, users must optimize the module wafer sampling to obtain their desired goals. Users must also understand the complexity of the coater/developer handling systems to deliver wafers to each module. Coater/developer systems typically process wafers sequentially through each module to ensure consistent processing. In these systems, the first wafer must process through a module before the next wafer can process through a module, and the first wafer must return to the cassette before the second wafer can return to the cassette. IM modules within this type of system can reduce throughput and limit flexible wafer selections. Finally, users must have the ability to select specific wafer samplings for each IM module. This case study explores how to optimize wafer sampling plans and how to identify limitations with the complexity of multiple integrated modules to ensure maximum metrology throughput without impact to the productivity of processing wafers through the photolithography cell (litho cell).

  18. Adhesive wafer bonding using a molded thick benzocyclobutene layer for wafer-level integration of MEMS and LSI

    NASA Astrophysics Data System (ADS)

    Makihata, M.; Tanaka, S.; Muroyama, M.; Matsuzaki, S.; Yamada, H.; Nakayama, T.; Yamaguchi, U.; Mima, K.; Nonomura, Y.; Fujiyoshi, M.; Esashi, M.

    2011-08-01

    This paper describes a wafer bonding process using a 50 µm thick benzocyclobutene (BCB) layer which has vias and metal electrodes. The vias were fabricated by molding BCB using a glass mold. During the molding, worm-like voids grew between BCB and the mold due to the shrinkage of polymerizing BCB. They were completely removed by subsequent reflowing in N2. After patterning Al on the reflowed BCB for the electrodes and via connections, bonding with a glass substrate was performed. Voidless bonding without damage in the vias and electrodes was achieved. Through the process, the control of the polymerization degree of BCB is important, and thus the polymerization degree was evaluated by Fourier transform infrared spectroscopy. The developed process is useful for the wafer-bonding-based integration of different devices, e.g. micro electro mechanical systems and large-scale integrated circuits.

  19. Failure And Yield Analysis Techniques For Readout Devices Tested In A High Throughput Automated Wafer Probing Environment

    NASA Astrophysics Data System (ADS)

    Jolivet, Noel D.; Holoien, Lee D.

    1990-01-01

    Failure and yield analysis capabilities were developed for focal plane array (FPA) readout devices probe tested at wafer level instead of merely performing production rate testing and cataloging data. Innovative test strategies have been combined with software techniques to provide tools which accomplish these analyses while maintaining high throughput in test. This approach has been beneficial and valuable in saving test time when searching for hardware faults, investigating design susceptibilities, revealing foundry process variations from wafer to wafer and/or lot to lot, and creating a yield model for the parts tested. Testing of readout devices has historically been viewed as a major obstacle in high volume production of reliable components for focal plane systems. Thorough testing in a high throughput automated wafer probe environment may be achieved, but often at the expense of real-time analysis of failures and yield factors. Production testing has been established with these goals in mind rather than as an afterthought. This enables one to identify failure mechanisms as they occur in order to reduce yield loss and unnecessary test time. In addition to performing requisite data base management, routines have been created to re-sort data and reevaluate yield through varying performance parameter limits, to track and map failure mechanisms as they are encountered, to examine acquired data as a function of limits, and to provide yield information for feedback response to foundry processing. Ideas for aiding operators in recognizing and diagnosing possible test set hardware problems (as opposed to on-chip failures) have also been implemented.

  20. Bulk Laser Material Modification: Towards a Kerfless Laser Wafering Process

    NASA Astrophysics Data System (ADS)

    LeBeau, James

    Due to the ever increasing relevance of finer machining control as well as necessary reduction in material waste by large area semiconductor device manufacturers, a novel bulk laser machining method was investigated. Because the cost of silicon and sapphire substrates are limiting to the reduction in cost of devices in both the light emitting diode (LED) and solar industries, and the present substrate wafering process results in >50% waste, the need for an improved ingot wafering technique exists. The focus of this work is the design and understanding of a novel semiconductor wafering technique that utilizes the nonlinear absorption properties of band-gapped materials to achieve bulk (subsurface) morphological changes in matter using highly focused laser light. A method and tool was designed and developed to form controlled damage regions in the bulk of a crystalline sapphire wafer leaving the surfaces unaltered. The controllability of the subsurface damage geometry was investigated, and the effect of numerical aperture of the focusing optic, energy per pulse, wavelength, and number of pulses was characterized for a nanosecond pulse length variable wavelength Nd:YAG OPO laser. A novel model was developed to describe the geometry of laser induced morphological changes in the bulk of semiconducting materials for nanosecond pulse lengths. The beam propagation aspect of the model was based on ray-optics, and the full Keldysh multiphoton photoionization theory in conjuncture with Thornber's and Drude's models for impact ionization were used to describe high fluence laser light absorption and carrier generation ultimately resulting in permanent material modification though strong electron-plasma absorption and plasma melting. Although the electron-plasma description of laser damage formation is usually reserved for extremely short laser pulses (<20 ps), this work shows that it can be adapted for longer pulses of up to tens of nanoseconds. In addition to a model

  1. Mechanical Properties of Photovoltaic Silicon in Relation to Wafer Breakage

    NASA Astrophysics Data System (ADS)

    Kulshreshtha, Prashant Kumar

    This thesis focuses on the fundamental understanding of stress-modified crack-propagation in photovoltaic (PV) silicon in relation to the critical issue of PV silicon "wafer breakage". The interactions between a propagating crack and impurities/defects/residual stresses have been evaluated for consequential fracture path in a thin PV Si wafer. To investigate the mechanism of brittle fracture in silicon, the phase transformations induced by elastic energy released at a propagating crack-tip have been evaluated by locally stressing the diamond cubic Si lattice using a rigid Berkovich nanoindenter tip (radius ≈50 nm). Unique pressure induced phase transformations and hardness variations have been then related to the distribution of precipitates (O, Cu, Fe etc.), and the local stresses in the wafer. This research demonstrates for the first time the "ductile-like fracture" in almost circular crack path that significantly deviates from its energetically favorable crystallographic [110](111) system. These large diameter (≈ 200 mm) Si wafers were sliced to less than 180 microm thickness from a Czochralski (CZ) ingot that was grown at faster than normal growth rates. The vacancy (vSi) driven precipitation of oxygen at enhanced thermal gradients in the wafer core develops large localized stresses (upto 100 MPa) which we evaluated using Raman spectral analysis. Additional micro-FTIR mapping and microscopic etch pit measurements in the wafer core have related the observed crack path deviations to the presence of concentric ring-like distributions of oxygen precipitates (OPs). To replicate these "real-world" breakage scenarios and provide better insight on crack-propagation, several new and innovative tools/devices/methods have been developed in this study. An accurate quantitative profiling of local stress, phase changes and load-carrying ability of Si lattice has been performed in the vicinity of the controlled micro-cracks created using micro-indentations to represent

  2. Wafer-scale, three-dimensional helical porous thin films deposited at a glancing angle

    NASA Astrophysics Data System (ADS)

    Huang, Zhifeng; Bai, Fan

    2014-07-01

    Minimization of helices opens a door to impose novel functions derived from the dimensional shrinkage of optical, mechanical and electronic devices. Glancing angle deposition (GLAD) enables one to deposit three-dimensional helical porous thin films (HPTFs) composed of separated spiral micro/nano-columns. GLAD integrates a series of advantageous features, including one-step deposition, wafer-scale production with mono-handedness of spirals, flexible engineering of spiral materials and dimensions, and the adaption to various kinds of substrates. Herein, we briefly review the fabrication of HPTFs by GLAD, specific growth mechanisms, physical properties in structures, mechanics and chiral optics, and the emerging applications in green energy. A prospective outlook is presented to illuminate some promising developments in enantioselection, bio-dynamic analyses, wirelessly-controlled drug delivery and mass production.

  3. Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale.

    PubMed

    Berman, Diana; Deshmukh, Sanket A; Narayanan, Badri; Sankaranarayanan, Subramanian K R S; Yan, Zhong; Balandin, Alexander A; Zinovev, Alexander; Rosenmann, Daniel; Sumant, Anirudha V

    2016-01-01

    The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the process can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. In addition, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics. PMID:27373740

  4. Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

    PubMed Central

    Berman, Diana; Deshmukh, Sanket A.; Narayanan, Badri; Sankaranarayanan, Subramanian K. R. S.; Yan, Zhong; Balandin, Alexander A.; Zinovev, Alexander; Rosenmann, Daniel; Sumant, Anirudha V.

    2016-01-01

    The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the process can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. In addition, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics. PMID:27373740

  5. Characterization of guided wave propagation with piezoelectric wafer actuators in prestressed plates

    NASA Astrophysics Data System (ADS)

    Song, F.; Huang, G. L.

    2011-04-01

    Plate-like aerospace engineering structures are prone to mechanical/residual load during flight operation. The mechanical/residual prestresses can cause significant changes in guided-wave (GW) propagation for structural health monitoring (SHM) systems. The paper focuses on the characterization of the GW propagation using surfacebonded piezoelectric wafer actuators in metallic spacecraft plates under prestresses. First, a new in-plane analytical model with coupled piezo-elastodynamics is proposed to quantitatively capture the dynamic load transfer between a thin piezoelectric actuator bonded onto an isotropic plate that is subject to prestresses. Based on the developed model, effects of prestresses on the GW propagation generated by piezoelectric actuators are then analyzed and demonstrated. It can be found that the both time-of-flight and amplitude of wave responses can be affected by the presence of prestresses in plates. The results hopefully provide useful information for the real-time SHM.

  6. Clinical implementation of enhanced dynamic wedges into the Pinnacle treatment planning system: Monte Carlo validation and patient-specific QA

    NASA Astrophysics Data System (ADS)

    Ahmad, Munir; Deng, Jun; Lund, Molly W.; Chen, Zhe; Kimmett, James; Moran, Meena S.; Nath, Ravinder

    2009-01-01

    The goal of this work is to present a systematic Monte Carlo validation study on the clinical implementation of the enhanced dynamic wedges (EDWs) into the Pinnacle3 (Philips Medical Systems, Fitchburg, WI) treatment planning system (TPS) and QA procedures for patient plan verification treated with EDWs. Modeling of EDW beams in the Pinnacle3 TPS, which employs a collapsed-cone convolution superposition (CCCS) dose model, was based on a combination of measured open-beam data and the 'Golden Segmented Treatment Table' (GSTT) provided by Varian for each photon beam energy. To validate EDW models, dose profiles of 6 and 10 MV photon beams from a Clinac 2100 C/D were measured in virtual water at depths from near-surface to 30 cm for a wide range of field sizes and wedge angles using the Profiler 2 (Sun Nuclear Corporation, Melbourne, FL) diode array system. The EDW output factors (EDWOFs) for square fields from 4 to 20 cm wide were measured in virtual water using a small-volume Farmer-type ionization chamber placed at a depth of 10 cm on the central axis. Furthermore, the 6 and 10 MV photon beams emerging from the treatment head of Clinac 2100 C/D were fully modeled and the central-axis depth doses, the off-axis dose profiles and the output factors in water for open and dynamically wedged fields were calculated using the Monte Carlo (MC) package EGS4. Our results have shown that (1) both the central-axis depth doses and the off-axis dose profiles of various EDWs computed with the CCCS dose model and MC simulations showed good agreement with the measurements to within 2%/2 mm; (2) measured EDWOFs used for monitor-unit calculation in Pinnacle3 TPS agreed well with the CCCS and MC predictions within 2%; (3) all the EDW fields satisfied our validation criteria of 1% relative dose difference and 2 mm distance-to-agreement (DTA) with 99-100% passing rate in routine patient treatment plan verification using MapCheck 2D diode array.

  7. Clinical implementation of enhanced dynamic wedges into the Pinnacle treatment planning system: Monte Carlo validation and patient-specific QA.

    PubMed

    Ahmad, Munir; Deng, Jun; Lund, Molly W; Chen, Zhe; Kimmett, James; Moran, Meena S; Nath, Ravinder

    2009-01-21

    The goal of this work is to present a systematic Monte Carlo validation study on the clinical implementation of the enhanced dynamic wedges (EDWs) into the Pinnacle(3) (Philips Medical Systems, Fitchburg, WI) treatment planning system (TPS) and QA procedures for patient plan verification treated with EDWs. Modeling of EDW beams in the Pinnacle(3) TPS, which employs a collapsed-cone convolution superposition (CCCS) dose model, was based on a combination of measured open-beam data and the 'Golden Segmented Treatment Table' (GSTT) provided by Varian for each photon beam energy. To validate EDW models, dose profiles of 6 and 10 MV photon beams from a Clinac 2100 C/D were measured in virtual water at depths from near-surface to 30 cm for a wide range of field sizes and wedge angles using the Profiler 2 (Sun Nuclear Corporation, Melbourne, FL) diode array system. The EDW output factors (EDWOFs) for square fields from 4 to 20 cm wide were measured in virtual water using a small-volume Farmer-type ionization chamber placed at a depth of 10 cm on the central axis. Furthermore, the 6 and 10 MV photon beams emerging from the treatment head of Clinac 2100 C/D were fully modeled and the central-axis depth doses, the off-axis dose profiles and the output factors in water for open and dynamically wedged fields were calculated using the Monte Carlo (MC) package EGS4. Our results have shown that (1) both the central-axis depth doses and the off-axis dose profiles of various EDWs computed with the CCCS dose model and MC simulations showed good agreement with the measurements to within 2%/2 mm; (2) measured EDWOFs used for monitor-unit calculation in Pinnacle(3) TPS agreed well with the CCCS and MC predictions within 2%; (3) all the EDW fields satisfied our validation criteria of 1% relative dose difference and 2 mm distance-to-agreement (DTA) with 99-100% passing rate in routine patient treatment plan verification using MapCheck 2D diode array. PMID:19098353

  8. Grid integration and smart grid implementation of emerging technologies in electric power systems through approximate dynamic programming

    NASA Astrophysics Data System (ADS)

    Xiao, Jingjie

    A key hurdle for implementing real-time pricing of electricity is a lack of consumers' responses. Solutions to overcome the hurdle include the energy management system that automatically optimizes household appliance usage such as plug-in hybrid electric vehicle charging (and discharging with vehicle-to-grid) via a two-way communication with the grid. Real-time pricing, combined with household automation devices, has a potential to accommodate an increasing penetration of plug-in hybrid electric vehicles. In addition, the intelligent energy controller on the consumer-side can help increase the utilization rate of the intermittent renewable resource, as the demand can be managed to match the output profile of renewables, thus making the intermittent resource such as wind and solar more economically competitive in the long run. One of the main goals of this dissertation is to present how real-time retail pricing, aided by control automation devices, can be integrated into the wholesale electricity market under various uncertainties through approximate dynamic programming. What distinguishes this study from the existing work in the literature is that whole- sale electricity prices are endogenously determined as we solve a system operator's economic dispatch problem on an hourly basis over the entire optimization horizon. This modeling and algorithm framework will allow a feedback loop between electricity prices and electricity consumption to be fully captured. While we are interested in a near-optimal solution using approximate dynamic programming; deterministic linear programming benchmarks are use to demonstrate the quality of our solutions. The other goal of the dissertation is to use this framework to provide numerical evidence to the debate on whether real-time pricing is superior than the current flat rate structure in terms of both economic and environmental impacts. For this purpose, the modeling and algorithm framework is tested on a large-scale test case

  9. On finding and using identifiable parameter combinations in nonlinear dynamic systems biology models and COMBOS: a novel web implementation.

    PubMed

    Meshkat, Nicolette; Kuo, Christine Er-zhen; DiStefano, Joseph

    2014-01-01

    Parameter identifiability problems can plague biomodelers when they reach the quantification stage of development, even for relatively simple models. Structural identifiability (SI) is the primary question, usually understood as knowing which of P unknown biomodel parameters p1,…, pi,…, pP are-and which are not-quantifiable in principle from particular input-output (I-O) biodata. It is not widely appreciated that the same database also can provide quantitative information about the structurally unidentifiable (not quantifiable) subset, in the form of explicit algebraic relationships among unidentifiable pi. Importantly, this is a first step toward finding what else is needed to quantify particular unidentifiable parameters of interest from new I-O experiments. We further develop, implement and exemplify novel algorithms that address and solve the SI problem for a practical class of ordinary differential equation (ODE) systems biology models, as a user-friendly and universally-accessible web application (app)-COMBOS. Users provide the structural ODE and output measurement models in one of two standard forms to a remote server via their web browser. COMBOS provides a list of uniquely and non-uniquely SI model parameters, and-importantly-the combinations of parameters not individually SI. If non-uniquely SI, it also provides the maximum number of different solutions, with important practical implications. The behind-the-scenes symbolic differential algebra algorithms are based on computing Gröbner bases of model attributes established after some algebraic transformations, using the computer-algebra system Maxima. COMBOS was developed for facile instructional and research use as well as modeling. We use it in the classroom to illustrate SI analysis; and have simplified complex models of tumor suppressor p53 and hormone regulation, based on explicit computation of parameter combinations. It's illustrated and validated here for models of moderate complexity, with

  10. Wafer shape compensation at the track PEB for improved CD uniformity

    NASA Astrophysics Data System (ADS)

    Michaelson, Timothy; Dai, Junyan; Chen, Lu; Cervera, Hiram; Lue, Brian; Herchen, Harald; Vellore, Kim; Bekiaris, Nikolaos

    2008-03-01

    This paper investigates the feasibility of using an electrostatic chuck (ESC) on a post exposure bake (PEB) plate in the track to improve the critical dimension uniformity (CDU) for bowed wafers. Although it is more conventional to consider vacuum chucking during PEB, electrostatic chucking offers some potential advantages, chief among which is the fact that electrostatic chucking does not require any type of a seal between the wafer and the PEB plate whereas vacuum chucking does. Such a seal requires contact and therefore has the potential to generate backside particles on the wafer. Electrostatic chucking therefore has the potential for a cleaner overall process. Three different PEB plates were tested in the course of this investigation, a non-chucking PEB plate (SRHP), a PEB plate equipped with a vacuum chuck (VRHP), and a PEB plate equipped with an ESC (eBHP). It was found that CD uniformities were up to 84 percent lower for bowed wafers that were chucked during PEB relative to wafers that were not chucked. In every case tested, wafers processed through chucking PEB plates showed lower CDUs than wafers processed through the non-chucking plate. CDU results were similar between vacuum chucked wafers and electrostatic chucked wafers. Based on the results presented in this paper, it can be concluded that electrostatic chucking during PEB is a feasible method for controlling CD uniformities on bowed wafers.

  11. Wafer sub-layer impact in OPC/ORC models for 2x nm node implant layers

    NASA Astrophysics Data System (ADS)

    Le-Denmat, Jean-Christophe; Martinelli, Catherine; Sungauer, Elodie; Michel, Jean-Christophe; Yesilada, Emek; Robert, Frederic

    2013-04-01

    From 28nm technology node and below, Optical Proximity Correction (OPC) needs to take into account light scattering effects from prior layers when bottom anti-reflective coating (BARC) is not used, which is typical for implant layers. In this paper, we implement a sub-layer aware simulation method into a verification tool for Optical Rule Check (ORC) that is used on full 28nm test chip. The sub-layer aware verification can predict defects that are missed by standard ORC. SEM-CD review and defectivity analysis were used to confirm the validity of the sub-layer aware model on wafer.

  12. Transfer of InP epilayers by wafer bonding

    NASA Astrophysics Data System (ADS)

    Hjort, Klas

    2004-08-01

    Wafer bonding increases the freedom of design in the integration of dissimilar materials. For example, it is interesting to combine III-V compounds that have direct band gap and high mobility with silicon (Si) that is extensively used in microelectronic applications. The interest to integrate III-V-based materials with Si arises primarily from two types of applications: smart pixels for optical intra- and inter-chip interconnects in the so-called optoelectronic integrated circuits, and optoelectronic devices using some material advantages of combining III-V with Si. Also, in the III-V industry larger substrates are crucial for higher efficiency in high-volume production, and especially so for monolithic microwave integrated circuits (MMIC). For indium phosphide (InP) the development of large-area substrates has not been able to keep up with market demands. One way to circumvent this problem is to use silicon substrates that are large-area, low-cost, and mechanically strong with high thermal conductivity. In addition, silicon is transparent at the emission wavelengths most often used in InP-based optoelectronics. Unfortunately, the large lattice-mismatch, 8.1%, between silicon and InP, has limited the success of heteroepitaxial growth. Hence, one alternative to be reviewed is InP-to-Si wafer bonding. When a direct semiconductor interface is not needed there are several other means of wafer bonding, e.g. adhesive, eutectic, and solid-state. These processes can be used for direct integration of small islets of epitaxially thin InP microelectronics onto other substrates, e.g. by transferring of InP-based epilayers to a Si-based microwave circuit by pick-and-place, BCB resist adhesive bonding and sacrificing of the InP substrate.

  13. High transmittance silicon terahertz polarizer using wafer bonding technology

    NASA Astrophysics Data System (ADS)

    Yu, Ting-Yang; Tsai, Hsin-Cheng; Wang, Shiang-Yu; Luo, Chih-Wei; Chen, Kuan-Neng

    2015-08-01

    Due to the difficulties faced in fabricating robust Terahertz (THz) optical components with low Fresnel reflection loss, the need to increase the efficiency of THz system with reduced cost is still considered as one of the most essential tasks. In this report, a new low cost THz polarizer with robust structure is proposed and demonstrated. This new THz wire grid polarizer was based on an anti-reflection (AR) layer fabricated with low temperature metal bonding and deep reactive ion etching (DRIE). After patterning Cu wire gratings and the corresponding In/Sn solder ring on the individual silicon wafers, the inner gratings were sealed by wafer-level Cu to In/Sn guard ring bonding, providing the protection against humidity oxidation and corrosion. With the low eutectic melting point of In/Sn solder, wafers could be bonded face to face below 150°C. Two anti-reflection layers on both outward surfaces were fabricated by DRIE. With the mixing of empty holes and silicon, the effective refractive index was designed to be the square root of the silicon refractive index. The central frequency of the anti-reflection layers was designed between 0.5THz to 2THz with an approximate bandwidth of 0.5THz. The samples were measured with a commercial free-standing wire grid polarizer by a THz time domain spectroscopy (THz-TDS) from 0.2THz to 2.2THz. The power transmittance is close to 100% at central frequency. Extinction ratio of the polarizer is between 20dB to 40dB depending on the frequency. The advantages of this new polarizer include high transmittance, robust structure and low cost with no precision optical alignment required.

  14. Wafer-level manufacturing technology of glass microlenses

    NASA Astrophysics Data System (ADS)

    Gossner, U.; Hoeftmann, T.; Wieland, R.; Hansch, W.

    2014-08-01

    In high-tech products, there is an increasing demand to integrate glass lenses into complex micro systems. Especially in the lighting industry LEDs and laser diodes used for automotive applications require encapsulated micro lenses. To enable low-cost production, manufacturing of micro lenses on wafer level base using a replication technology is a key technology. This requires accurate forming of thousands of lenses with a diameter of 1-2 mm on a 200 mm wafer compliant with mass production. The article will discuss the technical aspects of a lens manufacturing replication process and the challenges, which need to be solved: choice of an appropriate master for replication, thermally robust interlayer coating, choice of replica glass, bonding and separation procedure. A promising approach for the master substrate material is based on a lens structured high-quality glass wafer with high melting point covered by a coating layer of amorphous silicon or germanium. This layer serves as an interlayer for the glass bonding process. Low pressure chemical vapor deposition and plasma enhanced chemical vapor deposition processes allow a deposition of layer coatings with different hydrogen and doping content influencing their chemical and physical behavior. A time reduced molding process using a float glass enables the formation of high quality lenses while preserving the recyclability of the mother substrate. The challenge is the separation of the replica from the master mold. An overview of chemical methods based on optimized etching of coating layer through small channels will be given and the impact of glass etching on surface roughness is discussed.

  15. Implementation of dynamic crop growth processes into a land surface model: evaluation of energy, water and carbon fluxes under corn and soybean rotation

    NASA Astrophysics Data System (ADS)

    Song, Y.; Jain, A. K.; McIsaac, G. F.

    2013-12-01

    Worldwide expansion of agriculture is impacting the earth's climate by altering carbon, water, and energy fluxes, but the climate in turn is impacting crop production. To study this two-way interaction and its impact on seasonal dynamics of carbon, water, and energy fluxes, we implemented dynamic crop growth processes into a land surface model, the Integrated Science Assessment Model (ISAM). In particular, we implemented crop-specific phenology schemes and dynamic carbon allocation schemes. These schemes account for light, water, and nutrient stresses while allocating the assimilated carbon to leaf, root, stem, and grain pools. The dynamic vegetation structure simulation better captured the seasonal variability in leaf area index (LAI), canopy height, and root depth. We further implemented dynamic root distribution processes in soil layers, which better simulated the root response of soil water uptake and transpiration. Observational data for LAI, above- and belowground biomass, and carbon, water, and energy fluxes were compiled from two AmeriFlux sites, Mead, NE, and Bondville, IL, USA, to calibrate and evaluate the model performance. For the purposes of calibration and evaluation, we use a corn-soybean (C4-C3) rotation system over the period 2001-2004. The calibrated model was able to capture the diurnal and seasonal patterns of carbon assimilation and water and energy fluxes for the corn-soybean rotation system at these two sites. Specifically, the calculated gross primary production (GPP), net radiation fluxes at the top of the canopy, and latent heat fluxes compared well with observations. The largest bias in model results was in sensible heat flux (SH) for corn and soybean at both sites. The dynamic crop growth simulation better captured the seasonal variability in carbon and energy fluxes relative to the static simulation implemented in the original version of ISAM. Especially, with dynamic carbon allocation and root distribution processes, the model

  16. Self-assembly of Epitaxial Monolayers for Vacuum Wafer Bonding.

    NASA Astrophysics Data System (ADS)

    Altfeder, Igor; Huang, Biqin; Appelbaum, Ian; Walker, Barry

    2007-03-01

    Self-assembled epitaxial metal monolayers can be used for hetero-integration of mismatched semiconductors, leading to simultaneously low interfacial resistance and high optical transparency. Lattice-mismatched wafers of Si(100) and Si(111) were bonded at room temperature in situ after vacuum deposition of a single atomic layer of Ag on them. The interfacial resistance was measured to be 3.9x 10-4 ohm. cm^ 2 and the optical transmission of the interface at 2500 nm is approximately 98%. We discuss the important role of electron confinement in ultrathin Ag layers as a possible contributor to the bonding energy.

  17. Self-assembly of epitaxial monolayers for vacuum wafer bonding

    NASA Astrophysics Data System (ADS)

    Altfeder, Igor; Huang, Biqin; Appelbaum, Ian; Walker, B. C.

    2006-11-01

    Self-assembled epitaxial metal monolayers can be used for heterointegration of mismatched semiconductors, leading to simultaneously low interfacial resistance and high optical transparency. Lattice-mismatched wafers of Si(100) and Si(111) were bonded at room temperature in situ after vacuum deposition of a single atomic layer of Ag. The interfacial resistance was measured to be 3.9×10-4Ωcm2 and the optical transmission of the interface at 2500nm is approximately 98%. Electron confinement in ultrathin Ag layers as a possible contributor to the bonding energy.

  18. Wafer-level assembly of carbon nanotube networks using dielectrophoresis

    NASA Astrophysics Data System (ADS)

    Monica, A. H.; Papadakis, S. J.; Osiander, R.; Paranjape, M.

    2008-02-01

    We use dielectrophoresis (DEP) to controllably and simultaneously assemble multiple carbon nanotube (CNT) networks at the wafer level. By an appropriate choice of electrode dimensions and geometry, an electric field is generated that captures CNTs from a sizable volume of suspension, resulting in good CNT network uniformity and alignment. During the DEP process, the electrical characteristics of the CNT network are measured and correlated with the network morphology. These experiments give novel insight into the physics of DEP assembly of CNT networks, and demonstrate the scalability of DEP for future device applications.

  19. A sliding wafer-OMVPE scheme for fabricating subnanometer superlattices

    NASA Astrophysics Data System (ADS)

    Minagawa, S.; Satoh, S.; Nakatsuka, S.; Kakibayashi, H.

    1988-03-01

    A sliding wafer-OMVPE (Organometallic Vapor Phase Epitaxy) reactor suitable for growing superlattices is developed. The reactor is a two-channel horizontal reactor with a susceptor placed across the two channels. A slider is used to transport the substrate by sliding it along the susceptor surface from one channel to the other. This scheme makes it possible to set the temperature of the susceptor in each channel independently by utilizing the skin effect of radio wave in graphite. The performance of this scheme is demonstrated by growing a superlattice of ten periods of GaAs(3.5 Å)/AlAs(7 Å).

  20. Network analyzer calibration for cryogenic on-wafer measurements

    SciTech Connect

    Hietala, V.M.; Housel, M.S.; Caldwell, R.B.

    1994-04-01

    A cryogenic probe station for on-wafer microwave measurements has been developed at Sandia National Laboratories to explore the basic device physics and characterize advanced components for low-temperature applications. The station was designed to operate over a temperature range of 20 to 300 K with a frequency range of DC to 50 GHz. Due to the vacuum and the low temperature environment, the use of microwave probes and the calibration of network analyzer measurements are somewhat elaborate. This paper presents guidelines for probe use and calibration in this environment.

  1. Sub-micron texturing of silicon wafer with fiber laser

    NASA Astrophysics Data System (ADS)

    Farrokhi, Hamid; Zhou, Wei; Zheng, Hong Yu; Li, Zhongli

    2011-03-01

    Laser texturing is extensively investigated for modifying surface properties. A continuous wave (CW) fiber laser (λ= 1090nm) was used to pattern a silicon wafer surface in ambient and O2 atmosphere respectively. The O2 gas stream was delivered through a coaxial nozzle to the laser spot. Characterization of the patterned features was carried out by surface profiling, scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS or EDX), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Formation of laser-induced silicon oxide sub-micron bumps was observed, which were analyzed and shown to cause changes in surface wetability and reflectivity.

  2. Addressable Inverter Matrix Tests Integrated-Circuit Wafer

    NASA Technical Reports Server (NTRS)

    Buehler, Martin G.

    1988-01-01

    Addressing elements indirectly through shift register reduces number of test probes. With aid of new technique, complex test structure on silicon wafer tested with relatively small number of test probes. Conserves silicon area by reduction of area devoted to pads. Allows thorough evaluation of test structure characteristics and of manufacturing process parameters. Test structure consists of shift register and matrix of inverter/transmission-gate cells connected to two-by-ten array of probe pads. Entire pattern contained in square area having only 1.6-millimeter sides. Shift register is conventional static CMOS device using inverters and transmission gates in master/slave D flip-flop configuration.

  3. Enhancing Scheduling Performance for a Wafer Fabrication Factory: The Biobjective Slack-Diversifying Nonlinear Fluctuation-Smoothing Rule

    PubMed Central

    Chen, Toly; Wang, Yu Cheng

    2012-01-01

    A biobjective slack-diversifying nonlinear fluctuation-smoothing rule (biSDNFS) is proposed in the present work to improve the scheduling performance of a wafer fabrication factory. This rule was derived from a one-factor bi-objective nonlinear fluctuation-smoothing rule (1f-biNFS) by dynamically maximizing the standard deviation of the slack, which has been shown to benefit scheduling performance by several previous studies. The efficacy of the biSDNFS was validated with a simulated case; evidence was found to support its effectiveness. We also suggested several directions in which it can be exploited in the future. PMID:23509446

  4. Dynamic analysis and implementation of a digital signal processor of a fractional-order Lorenz-Stenflo system based on the Adomian decomposition method

    NASA Astrophysics Data System (ADS)

    (王会海, H. H. Wang; (孙克辉, K. H. Sun; (贺少波, S. B. He

    2015-01-01

    By adopting the Adomian decomposition method, the fractional-order Lorenz-Stenflo (LS) system is solved and implemented in a digital signal processor (DSP). The discrete iterative formula of the system is deduced, and a Lyapunov exponent spectrum algorithm is designed. The dynamics of the fractional-order LS system with sets of parameters are analyzed by means of Lyapunov exponent spectra, bifurcation diagrams and 0-1 test. The results illustrate that the fractional-order LS system has rich dynamic behaviors, and both the system parameter and the fractional order can be taken as bifurcation parameters. We implement the fractional-order LS system on a DSP platform. Phase portraits of the fractional-order LS system generated in the DSP agree well with those obtained by computer simulations. This lays a good foundation for the application of the fractional-order LS system.

  5. On Finding and Using Identifiable Parameter Combinations in Nonlinear Dynamic Systems Biology Models and COMBOS: A Novel Web Implementation

    PubMed Central

    DiStefano, Joseph

    2014-01-01

    Parameter identifiability problems can plague biomodelers when they reach the quantification stage of development, even for relatively simple models. Structural identifiability (SI) is the primary question, usually understood as knowing which of P unknown biomodel parameters p1,…, pi,…, pP are-and which are not-quantifiable in principle from particular input-output (I-O) biodata. It is not widely appreciated that the same database also can provide quantitative information about the structurally unidentifiable (not quantifiable) subset, in the form of explicit algebraic relationships among unidentifiable pi. Importantly, this is a first step toward finding what else is needed to quantify particular unidentifiable parameters of interest from new I–O experiments. We further develop, implement and exemplify novel algorithms that address and solve the SI problem for a practical class of ordinary differential equation (ODE) systems biology models, as a user-friendly and universally-accessible web application (app)–COMBOS. Users provide the structural ODE and output measurement models in one of two standard forms to a remote server via their web browser. COMBOS provides a list of uniquely and non-uniquely SI model parameters, and–importantly-the combinations of parameters not individually SI. If non-uniquely SI, it also provides the maximum number of different solutions, with important practical implications. The behind-the-scenes symbolic differential algebra algorithms are based on computing Gröbner bases of model attributes established after some algebraic transformations, using the computer-algebra system Maxima. COMBOS was developed for facile instructional and research use as well as modeling. We use it in the classroom to illustrate SI analysis; and have simplified complex models of tumor suppressor p53 and hormone regulation, based on explicit computation of parameter combinations. It’s illustrated and validated here for models of moderate complexity

  6. Automated Array Assembly Task In-depth Study of Silicon Wafer Surface Texturizing

    NASA Technical Reports Server (NTRS)

    Jones, G. T.; Chitre, S.; Rhee, S. S.; Allison, K. L.

    1979-01-01

    A low cost wafer surface texturizing process was studied. An investigation of low cost cleaning operations to clean residual wax and organics from the surface of silicon wafers was made. The feasibility of replacing dry nitrogen with clean dry air for drying silicon wafers was examined. The two stage texturizing process was studied for the purpose of characterizing relevant parameters in large volume applications. The effect of gettering solar cells on photovoltaic energy conversion efficiency is described.

  7. Implementation of dynamic crop growth processes into a land surface model: evaluation of energy, water and carbon fluxes under corn and soybean rotation

    NASA Astrophysics Data System (ADS)

    Song, Y.; Jain, A. K.; McIsaac, G. F.

    2013-06-01

    Worldwide expansion of agriculture is impacting Earth's climate by altering the carbon, water and energy fluxes, but climate in turn is impacting crop production. To study this two-way interaction and its impact on seasonal dynamics of carbon, water and energy fluxes, we implemented dynamic crop growth processes into a land surface model, the Integrated Science Assessment Model (ISAM). In particular, we implement crop specific phenology schemes, which account for light, water, and nutrient stresses while allocating the assimilated carbon to leaf, root, stem and grain pools; dynamic vegetation structure growth, which better simulate the LAI and canopy height; dynamic root distribution processes in the soil layers, which better simulate the root response of soil water uptake and transpiration; and litter fall due to fresh and old dead leaves to better represent the water and energy interception by both stem and brown leaves of the canopy during leaf senescence. Observational data for LAI, above and below ground biomass, and carbon, water and energy fluxes were compiled from two Ameri-Flux sites, Mead, NE and Bondville, IL, to calibrate and evaluate the model performance under corn (C4)-soybean (C3) rotation system over the period 2001-2004. The calibrated model was able to capture the diurnal and seasonal patterns of carbon assimilation, water and energy fluxes under the corn-soybean rotation system at these two sites. Specifically, the calculated GPP, net radiation fluxes at the top of canopy and latent heat fluxes compared well with observations. The largest bias in model results is in sensible heat flux (H) for corn and soybean at both sites. With dynamic carbon allocation and root distribution processes, model simulated GPP and latent heat flux (LH) were in much better agreement with observation data than for the without dynamic case. Modeled latent heat improved by 12-27% during the growing season at both sites, leading to the improvement in modeled GPP by 13

  8. EUV mask and wafer defectivity: strategy and evaluation for full die defect inspection

    NASA Astrophysics Data System (ADS)

    Bonam, Ravi; Tien, Hung-Yu; Chou, Acer; Meli, Luciana; Halle, Scott; Wu, Ivy; Huang, Xiaoxia; Lei, Chris; Kuan, Chiyan; Wang, Fei; Corliss, Daniel; Fang, Wei; Jau, Jack; Qi, Zhengqing John; Badger, Karen; Turley, Christina; Rankin, Jed

    2016-03-01

    Over the past few years numerous advancements in EUV Lithography have proven its feasibility of insertion into High Volume Manufacturing (HVM).1, 2 A lot of progress is made in the area of pellicle development but a commercially solution with related infrastructure is currently unavailable.3, 4 Due to current mask structure and unavailability of a pellicle, a comprehensive strategy to qualify (native defects) and monitor (adder defects) defectivity on mask and wafer is required for implementing EUV Lithography in High Volume Manufacturing. In this work, we assess multiple strategies for mask and wafer defect inspection including a two-fold solution to leverage resolution of e-beam inspection along with throughput of optical inspection are evaluated. Defect capture rates for inspections based on full-die, critical areas based on priority and hotspots based on design and prior inspection data are evaluated. Each strategy has merits and de-merits, particularly related to throughput, effective die coverage and computational overhead. A production ready EUV Exposure tool was utilized to perform exposures at the IBM EUV Center of Excellence in Albany, NY for EUV Lithography Development along with a fully automated line of EUV Mask Infrastructure tools. We will present strategies considered in this study and discuss respective results. The results from the study indicate very low transfer rate of defect detection events from optical mask inspection. They also suggest a hybrid strategy of utilizing both optical and e-beam inspection can provide a comprehensive defect detection which can be employed in High Volume Manufacturing.

  9. Effect of internal stresses on the mechanical parameters of silicon wafers

    SciTech Connect

    Oksanich, A.P.; Cherner, V.M.; Tuzovskii, K.A.

    1988-12-01

    The authors examined how the mechanical parameters of silicon wafers vary with the stress area. The polished (100) wafers were cut from a billet grown by Czochralski's method. The internal stresses were produced by moving the wafers in and out of an oven having a working zone at 1420 K. Then the oxide film was removed. The area of the stressed parts was determined by photoelasticity. The mechanical parameters were measured with contactless pneumatic loading and continuous central deflection measurement. The internal stresses affect the properties; at a given load the central deflection in an unstressed wafer is larger than in a stressed one.

  10. Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

    NASA Astrophysics Data System (ADS)

    Avizemer, Dan; Sharoni, Ofir; Oshemkov, Sergey; Cohen, Avi; Dayan, Asaf; Khurana, Ranjan; Kewley, Dave

    2015-07-01

    Requirements for control of critical dimension (CD) become more demanding as the integrated circuit (IC) feature size specifications become tighter and tighter. Critical dimension control, also known as CDC, is a well-known laser-based process in the IC industry that has proven to be robust, repeatable, and efficient in adjusting wafer CD uniformity (CDU) [Proc. SPIE 6152, 615225 (2006)]. The process involves locally and selectively attenuating the deep ultraviolet light which goes through the photomask to the wafer. The input data for the CDC process in the wafer fab is typically taken from wafer CDU data, which is measured by metrology tools such as wafer-critical dimension-scanning electron microscopy (CD-SEM), wafer optical scatterometry, or wafer level CD (WLCD). The CD correction process uses the CDU data in order to create an attenuation correction contour, which is later applied by the in-situ ultrashort laser system of the CDC to locally change the transmission of the photomask. The ultrashort pulsed laser system creates small, partially scattered, Shade-In-Elements (also known as pixels) by focusing the laser beam inside the quartz bulk of the photomask. This results in the formation of a localized, intravolume, quartz modified area, which has a different refractive index than the quartz bulk itself. The CDC process flow for improving wafer CDU in a wafer fab with detailed explanations of the shading elements formation inside the quartz by the ultrashort pulsed laser is reviewed.

  11. Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

    PubMed

    Soo, M Teng; Zheng, Kun; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Zou, Jin

    2016-07-13

    Development of heteroepitaxy growth of catalyst-free vertical III-V nanowires on Si wafers is highly desirable for future nanoscale Si-based electronic and optoelectronic devices. In this study, a proof-of-concept approach is developed for catalyst-free heteroepitaxy growth of InAs nanowires on Si wafers. Before the growth of InAs nanowires, a Si-compatible metallic film with a thickness of several tens of nanometers was predeposited on a Si wafer and then annealed to form nanosize openings so as to obtain a metallic mask. These nano-openings exposed the surface of the Si wafer, which allowed subsequent nucleation and growth of epitaxial InAs nanowires directly on the surface of the Si wafer. The small size of the nano-openings limits the lateral growth of the nanostructures but promotes their axial growth. Through this approach, catalyst-free InAs nanowires were grown on both Si (111) and (001) wafers successfully at different growth temperatures. In particular, ultralong defect-free InAs nanowires with the wurtzite structure were grown the Si (111) wafers at 550 °C using the Ni mask. This study offers a simple, cost-effective, and scalable method to grow catalyst-free III-V nanowires on Si wafers. The simplicity of the approach opens a new avenue for the growth and integration of catalyst-free high-quality heteroepitaxial III-V nanowires on Si wafers. PMID:27248817

  12. The optimization of CD uniformity and measurement on mask and wafer

    NASA Astrophysics Data System (ADS)

    Choi, Yongkyoo; Kim, Munsik; Han, Oscar

    2007-05-01

    As pattern size is shrinking, required mask CD specification is tighter and its effect on wafer patterning is more severe. To enhance the device performance, wafer CD uniformity should be enhanced and controlled by mask global CD uniformity. Mask global CD uniformity usually can be enhanced by mask process and optimal fogging effect correction. To enhance the mask global CD uniformity on mask, resist process and FEC (Fogging Effect Correction), reliable CD measurement tool and methods are necessary. Recently, group CD using OCD(Spectroscopic Ellipsometer) or AIMS(Aerial Image Measurement and Simulation) is used to represent global CD variation on mask. These methods are removing local CD variation on mask. Because local CD variation on wafer is large compared with the effect of local CD variation of mask, global CD uniformity can be measured with suppressed local CD variation [1]. In this paper, local CD variation of mask and wafer is evaluated, and area CD and smoothing methods are used to measure CD on mask and wafer, and the correlation of global CD of mask and field CD of wafer are evaluated. By these methods, CD measurement repeatability can be enhanced to get closer correlation of mask and wafer. Close correlation makes fine CD correction on mask to get better field CD uniformity on wafer. And the repeatability of field to field CD uniformity of wafer is evaluated according to measurement tool of CD-SEM and scatterometry.

  13. Wafer-scale fabrication of nanoapertures using corner lithography

    NASA Astrophysics Data System (ADS)

    Burouni, Narges; Berenschot, Erwin; Elwenspoek, Miko; Sarajlic, Edin; Leussink, Pele; Jansen, Henri; Tas, Niels

    2013-07-01

    Several submicron probe technologies require the use of apertures to serve as electrical, optical or fluidic probes; for example, writing precisely using an atomic force microscope or near-field sensing of light reflecting from a biological surface. Controlling the size of such apertures below 100 nm is a challenge in fabrication. One way to accomplish this scale is to use high resolution tools such as deep UV or e-beam. However, these tools are wafer-scale and expensive, or only provide series fabrication. For this reason, in this study a versatile method adapted from conventional micromachining is investigated to fabricate protruding apertures on wafer-scale. This approach is called corner lithography and offers control of the size of the aperture with diameter less than 50 nm using a low-budget lithography tool. For example, by tuning the process parameters, an estimated mean size of 44.5 nm and an estimated standard deviation of 2.3 nm are found. The technique is demonstrated—based on a theoretical foundation including a statistical analysis—with the nanofabrication of apertures at the apexes of micromachined pyramids. Besides apertures, the technique enables the construction of wires, slits and dots into versatile three-dimensional structures.

  14. UV/Ozone Cleaning For Organics Removal On Silicon Wafers

    NASA Astrophysics Data System (ADS)

    Zafonte, Leo; Chiu, Rafael

    1984-06-01

    The feasibility for using a combination of ultraviolet light and ozone - UV/Ozone Cleaning - for organics removal and photoresist residue cleaning from silicon semiconductor wafers was investigated. The process generates a highly oxidative atmosphere that is specific for removing trace organic residues. Product of the reactions are carbon dioxide and water. In most cases, stable inorganic materials such as oxide coatings remain unaffected. UV/Ozone exposure of silicon causes formation of a thin layer of silicon oxide that tends to retard further oxidation of the silicon. Based on the expected photochemistry o," this process, specific enhancements to accelerate the cleaning rates were tested. The enhancements involved the use of both gas phase and liquio phase additives, and comparative rates of removal were determined. The technique was tested on several photoresists, potential organic residues, and common solvent systems. The photoresists studies were primarily positive resists and were tested at several levels of ion implantation. The results of the testing suggests that the highest potential applications of UV/Ozone Cleaning in the processing of semiconductor wafers include: a) Removal of solvent residues and process contaminants. b) A pre-process step to insure cleanliness by removal of residual organic or airborne organic contaminants. c) As a post-process step to insure cleanliness or to remove trace organics.

  15. Cryogenic wafer-level MWIR camera: laboratory demonstration

    NASA Astrophysics Data System (ADS)

    Druart, G.; De La Barrière, F.; Chambon, M.; Guérineau, N.; Lasfargues, G.; Fendler, M.

    2013-06-01

    We present a compact infrared cryogenic multichannel camera with a wide field of view equal to 120°. By merging the optics with the detector, the concept has to be compatible with both cryogenic constraints and wafer-level fabrication. For this, we take advantage of the progress in micro-optics to design a multichannel optical architecture directly integrated on the detector. This wafer-level camera uses state of art microlenses with a high sag height. The additional mass of the optics is sufficiently small to be compatible with the cryogenic environment of the Dewar. The performance of this camera will be discussed. Its characterization has been carried out in terms of modulation transfer function and noise equivalent temperature difference (NETD). The optical system is limited by the diffraction. By cooling the optics, we achieve a very low NETD equal to 15 mK compared with traditional infrared cameras. A postprocessing algorithm that aims at reconstructing a well-sampled image from the set of undersampled raw subimages produced by the camera is proposed and validated on experimental images.

  16. Micropeak array in the scribe line on a wafer

    NASA Astrophysics Data System (ADS)

    Chiba, Teiichirou; Komura, Ryuusuke; Mori, Akira

    2000-11-01

    Small dot matrix marking on a silicon wafer has been performed using an second-harmonic generation (SHG) laser of yttrium aluminum garnet (YAG), liquid-crystal-display (LCD) mask, and projection optics. A marked image was obtained after laser irradiation through the pattern on the LCD mask. The each dot is a square with sides of 3.6micrometers , the pitch of each dot is 4.5micrometers and the height (not the depth) of each dot is approximately 0.5micrometers . The topography of each dot is unique, and features a central peak and peripheral depression. We have named this topography micropeak and have proposed a hypothesis for the micropeak formation mechanism, based on the density of liquid silicon and the congelation of molten silicon. In this report, micropeaks were formed in the scribe line on a wafer covered with oxide layers. Without being torn, these oxide layers were pushed up by micropeak generation and rose. Silicon particle scattering around the laser irradiation area was prevented completely. Clear dot images were observed through the transparent oxide layers. The conditions forc lean marking by laser irradiation greatly depend on the thickness of the oxide layers.

  17. Deposition and removal of sodium contamination on silicon wafers

    NASA Astrophysics Data System (ADS)

    Constant, I.; Tardif, F.; Derrien, J.

    2000-01-01

    In this paper investigations are performed in order to understand the source of sodium contamination in clean-room environments and to find different cleaning processes able to limit or suppress sodium deposition. In a clean-room environment, the human being has been identified as one of the major sources of sodium. The airborne sodium contamination is essentially transmitted in particle form. In order to limit sodium deposition from the air, the wafers awaiting subsequent processing need to be stored in a protective box or placed far from the human environment and should not be left for much more than 1 week in a class 1 clean room. Also, wet chemistries could cause sodium contamination on wafers particularly during the deionized water rinse. In order to limit the possible contamination, the sodium deposition mechanisms have been studied: they show the typical characteristics of Langmuir adsorption. Temperature and ionic concentration are both parameters which influence the deposition. In water, sodium deposition can be avoided by introducing acid or alkaline solutions or increasing the temperature: it can be drastically reduced by adding traces of HCl (0.01%). Finally, other cleaning chemistries such as SC1 (NH4 OH-H2 O2 -H2 O) in 0.25:1:5 proportion, SC2 (HCl-H2 O2 -H2 O) in 1:1:5 proportion, 0.1% HF and SPM (H2 SO4 -H2 O2 ) in 3:1 proportion reduce the contamination as well.

  18. Wafer-fused orientation-patterned GaAs

    NASA Astrophysics Data System (ADS)

    Li, Jin; Fenner, David B.; Termkoa, Krongtip; Allen, Mark G.; Moulton, Peter F.; Lynch, Candace; Bliss, David F.; Goodhue, William D.

    2008-02-01

    The fabrication of thick orientation-patterned GaAs (OP-GaAs) films is reported using a two-step process where an OP-GaAs template with the desired crystal domain pattern was prepared by wafer fusion bonding and then a thick film was grown over the template by low pressure hydride vapor phase epitaxy (HVPE). The OP template was fabricated using molecular beam epitaxy (MBE) followed by thermocompression wafer fusion, substrate removal, and lithographic patterning. On-axis (100) GaAs substrates were utilized for fabricating the template. An approximately 350 μm thick OP-GaAs film was grown on the template at an average rate of ~70 μm/hr by HVPE. The antiphase domain boundaries were observed to propagate vertically and with no defects visible by Nomarski microscopy in stain-etched cross sections. The optical loss at ~2 μm wavelength over an 8 mm long OP-GaAs grating was measured to be no more than that of the semi-insulating GaAs substrate. This template fabrication process can provide more flexibility in arranging the orientation of the crystal domains compared to the Ge growth process and is scalable to quasi-phase-matching (QPM) devices operating from the IR to terahertz frequencies utilizing existing industrial foundries.

  19. Mechanical Properties of Photovoltaic Silicon in Relation to Wafer Breakage

    NASA Astrophysics Data System (ADS)

    Kulshreshtha, Prashant Kumar

    This thesis focuses on the fundamental understanding of stress-modified crack-propagation in photovoltaic (PV) silicon in relation to the critical issue of PV silicon "wafer breakage". The interactions between a propagating crack and impurities/defects/residual stresses have been evaluated for consequential fracture path in a thin PV Si wafer. To investigate the mechanism of brittle fracture in silicon, the phase transformations induced by elastic energy released at a propagating crack-tip have been evaluated by locally stressing the diamond cubic Si lattice using a rigid Berkovich nanoindenter tip (radius ≈50 nm). Unique pressure induced phase transformations and hardness variations have been then related to the distribution of precipitates (O, Cu, Fe etc.), and the local stresses in the wafer. This research demonstrates for the first time the "ductile-like fracture" in almost circular crack path that significantly deviates from its energetically favorable crystallographic [110](111) system. These large diameter (≈ 200 mm) Si wafers were sliced to less than 180 microm thickness from a Czochralski (CZ) ingot that was grown at faster than normal growth rates. The vacancy (vSi) driven precipitation of oxygen at enhanced thermal gradients in the wafer core develops large localized stresses (upto 100 MPa) which we evaluated using Raman spectral analysis. Additional micro-FTIR mapping and microscopic etch pit measurements in the wafer core have related the observed crack path deviations to the presence of concentric ring-like distributions of oxygen precipitates (OPs). To replicate these "real-world" breakage scenarios and provide better insight on crack-propagation, several new and innovative tools/devices/methods have been developed in this study. An accurate quantitative profiling of local stress, phase changes and load-carrying ability of Si lattice has been performed in the vicinity of the controlled micro-cracks created using micro-indentations to represent

  20. Dual-Side Wafer Processing and Resonant Tunneling Transistor Applications

    SciTech Connect

    Moon, J.S.; Simmons, J.A.; Wendt, J.R.; Hietala, V.M.; Reno, J.L.; Baca, W.E.; Blount, M.A.

    1999-07-20

    We describe dual-side wafer processing and its application to resonant tunneling transistors in a planar configuration. The fabrication technique utilizes a novel flip-chip, wafer thinning process called epoxy-bond and stop-etch (EBASE) process, where the substrate material is removed by selective wet etching and stopped at an etch-stop layer. This EBASE method results in a semiconductor epitaxial layer that is typically less than a micron thick and has a mirror-finish, allowing backside gates to be placed in close proximity to frontside gates. Utilizing this technique, a resonant tunneling transistor--the double electron layer tunneling transistor (DELTT)--can be fabricated in a fully planar configuration, where the tunneling between two selectively-contacted 2DEGs in GaAs or InGaAs quantum wells is modulated by surface Schottky gate. Low temperature electrical characterization yields source-drain I-V curves with a gate-tunable negative differential resistance.

  1. An Analysis of How and Why High School Geometry Teachers Implement Dynamic Geometry Software Tasks for Student Engagement

    ERIC Educational Resources Information Center

    Nirode, Wayne

    2012-01-01

    This study examined teachers' use of student tasks involving dynamic geometry software, in which a figure is constructed then altered while maintaining its constructed properties. Although researchers, professional organizations, and policy makers generally have been proponents of dynamic geometry for instruction, there is little research…

  2. Analysis of the Implementation of a Dynamic Assessment Device of Processes Involved in Reading with Learning-Disabled Children

    ERIC Educational Resources Information Center

    Navarro, Juan-Jose; Mora, Joaquin

    2011-01-01

    The renewed interest in the dynamic assessment of specific domains has led to reconsideration of this theory and the technique's contribution to the learning-teaching process. In this article, we analyze some elements concerning the internal structure of a dynamic assessment device of processes involved in reading tasks, establishing some of the…

  3. An On-the-Fly Surface-Hopping Program JADE for Nonadiabatic Molecular Dynamics of Polyatomic Systems: Implementation and Applications.

    PubMed

    Du, Likai; Lan, Zhenggang

    2015-04-14

    Nonadiabatic dynamics simulations have rapidly become an indispensable tool for understanding ultrafast photochemical processes in complex systems. Here, we present our recently developed on-the-fly nonadiabatic dynamics package, JADE, which allows researchers to perform nonadiabatic excited-state dynamics simulations of polyatomic systems at an all-atomic level. The nonadiabatic dynamics is based on Tully's surface-hopping approach. Currently, several electronic structure methods (CIS, TDHF, TDDFT(RPA/TDA), and ADC(2)) are supported, especially TDDFT, aiming at performing nonadiabatic dynamics on medium- to large-sized molecules. The JADE package has been interfaced with several quantum chemistry codes, including Turbomole, Gaussian, and Gamess (US). To consider environmental effects, the Langevin dynamics was introduced as an easy-to-use scheme into the standard surface-hopping dynamics. The JADE package is mainly written in Fortran for greater numerical performance and Python for flexible interface construction, with the intent of providing open-source, easy-to-use, well-modularized, and intuitive software in the field of simulations of photochemical and photophysical processes. To illustrate the possible applications of the JADE package, we present a few applications of excited-state dynamics for various polyatomic systems, such as the methaniminium cation, fullerene (C20), p-dimethylaminobenzonitrile (DMABN) and its primary amino derivative aminobenzonitrile (ABN), and 10-hydroxybenzo[h]quinoline (10-HBQ). PMID:26574348

  4. New fabrication method of glass packages with inclined optical windows for micromirrors on wafer level

    NASA Astrophysics Data System (ADS)

    Stenchly, Vanessa; Quenzer, Hans-Joachim; Hofmann, Ulrich; Janes, Joachim; Jensen, Björn; Benecke, Wolfgang

    2013-03-01

    For many applications it is inevitable to protect MEMS devices against environmental impacts like humidity which can affect their performance. Moreover recent publications demonstrates that micro mirrors can achieve very large optical scan angles at moderate driving voltages even exceeding 100 degrees when hermetically sealed under vacuum. While discrete chips may be evacuated and sealed on single die level using small can packages like TO housings, it is obvious that for high volume production a much more economical solution for the realisation of transparent optical packages already on wafer level must be developed. However, since any laser beam crossing a transparent glass surface is partly reflected even when anti-reflective coatings are applied, the construction of a wafer level optical housing suitable for laser projection purpose requires more than the integration of simple plane glass cap. The use of inclined optical windows avoids the occurrence of intense reflections of the incident laser beam in the projected images. This paper describes a unique technology to fabricate glass packages with inclined optical windows for micro mirrors on 8 inch wafers. The new process uses a high temperature glass forming process based on subsequent wafer bonding. A borosilicate glass wafer is bonded together with two structured silicon wafers. By grinding both sides of the wafer stack, a pattern of isolated silicon structures is defined. This preprocessed glass wafer is bonded thereon on a third structured silicon wafer, wherein the silicon islands are inserted into the cavities. By setting a defined pressure level inside the cavities during the final wafer bonding, the silicon glass stack extruded and it is out of plane during a subsequent annealing process at temperatures above the softening point of the glass. Finally the silicon is selectively removed in a wet etching process. This technique allows the fabrication of 8 inch glass wafers with oblique optical surfaces

  5. Strategy For Yield Control And Enhancement In VLSI Wafer Manufacturing

    NASA Astrophysics Data System (ADS)

    Neilson, B.; Rickey, D.; Bane, R. P.

    1988-01-01

    In most fully utilized integrated circuit (IC) production facilities, profit is very closely linked with yield. In even the most controlled manufacturing environments, defects due to foreign material are a still major contributor to yield loss. Ideally, an IC manufacturer will have ample engineering resources to address any problem that arises. In the real world, staffing limitations require that some tasks must be left undone and potential benefits left unrealized. Therefore, it is important to prioritize problems in a manner that will give the maximum benefit to the manufacturer. When offered a smorgasbord of problems to solve, most people (engineers included) will start with what is most interesting or the most comfortable to work on. By providing a system that accurately predicts the impact of a wide variety of defect types, a rational method of prioritizing engineering effort can be made. To that effect, a program was developed to determine and rank the major yield detractors in a mixed analog/digital FET manufacturing line. The two classical methods of determining yield detractors are chip failure analysis and defect monitoring on drop in test die. Both of these methods have short comings: 1) Chip failure analysis is painstaking and very time consuming. As a result, the sample size is very small. 2) Drop in test die are usually designed for device parametric analysis rather than defect analysis. To provide enough wafer real estate to do meaningful defect analysis would render the wafer worthless for production. To avoid these problems, a defect monitor was designed that provided enough area to detect defects at the same rate or better than the NMOS product die whose yield was to be optimized. The defect monitor was comprehensive and electrically testable using such equipment as the Prometrix LM25 and other digital testers. This enabled the quick accumulation of data which could be handled statistically and mapped individually. By scaling the defect densities

  6. Alternative fabrication process for edgeless detectors on 6 in. wafers

    NASA Astrophysics Data System (ADS)

    Kalliopuska, Juha; Eränen, Simo; Virolainen, Tuula

    2011-05-01

    VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process avoids all slow process steps, such as polysilicon growth, planarization and additional ICP-etching. We have successfully fabricated 150 μm thick p-on-n and n-on-n prototypes of edgeless detectors having dead layers at the edge with a thickness below a micron. Fabrication was done on high resistivity n-type FZ-silicon wafers. The prototypes include 5×5 and 1×1 cm2 edgeless microstrip detectors with DC-, FOXFET- and PT-couplings. In addition 1.4×1.4 cm2 Medipix2 edgeless pixel detectors were also fabricated.This paper presents leakage current, capacitance and breakdown voltage measurements of different DC-coupled microstrip designs and compares them with respect to the active edge distance and polarity of the detector. The active edge distances were 20, 50 and 100 μm from the strips. Electrical characterization of these detectors on the wafer level gave promising results. A good uniformity in the measured parameters was observed for the inner strips. The parameters of the adjacent strip to the edge showed a dramatic dependence on the active edge distance. Leakage current and capacitance of the inner microstrips were 50-70 nA/cm2 and 580-660 pF/cm2 at, respectively, 40 V reverse bias for the p-on-n. For the n-on-n design these parameters were 116-118 nA/cm2 and 930-960 pF/cm2. The breakdown voltages were above 150 V for p-on-n prototypes and increased as a function of active edge distance. To fully deplete the p-on-n detectors required twice as much reverse bias as was needed for the n-on-n detectors, i.e. 13-28 V.

  7. Lattice constants of pure methane and carbon dioxide hydrates at low temperatures. Implementing quantum corrections to classical molecular dynamics studies

    NASA Astrophysics Data System (ADS)

    Costandy, Joseph; Michalis, Vasileios K.; Tsimpanogiannis, Ioannis N.; Stubos, Athanassios K.; Economou, Ioannis G.

    2016-03-01

    We introduce a simple correction to the calculation of the lattice constants of fully occupied structure sI methane or carbon dioxide pure hydrates that are obtained from classical molecular dynamics simulations using the TIP4PQ/2005 water force field. The obtained corrected lattice constants are subsequently used in order to obtain isobaric thermal expansion coefficients of the pure gas hydrates that exhibit a trend that is significantly closer to the experimental behavior than previously reported classical molecular dynamics studies.

  8. Wafer-scale integration and two-level pipelined implementations of systolic arrays

    SciTech Connect

    Kung, H.T.; Lam, M.S.

    1984-08-01

    For problems that have been solved exclusively by systolic arrays with feedback cycles, this paper introduces a new class of systolic algorithms based on a ring architecture. These systolic rings have the property that the throughput degrades gracefully as the number of failed cells in the rings increases. Furthermore, as a byproduct of the ring architecture approach, the authors have derived several new systolic algorithms which require only one-third to one-half of the cells used in previous designs while achieving the same throughput. They have shown that the two-level pipelining problem in systolic arrays are solved by the same techniques used to solve the fault-tolerance problem. An important task left for the future is the development of software to solve both problems automatically.

  9. Low target power wafer sputtering regime identified during magnetron tantalum barrier physical vapor deposition

    SciTech Connect

    Stout, Phillip J.; Denning, Dean J.; Michaelson, Lynne M.; Bagchi, Sandeep; Zhang Da; Ventzek, Peter L. G.

    2005-07-15

    A wafer sputtering regime has been identified during tantalum barrier deposition using a magnetron physical vapor deposition (MPVD) tool. The MPVD tools are designed to operate at high target powers (tens of kW) where the highly directed energetic metal (athermal metal) is the dominant metal species incident on the wafer. Although athermal metal gives better coverage than neutral metal (thermal) due to the narrower range of incident strike angles to the wafer, shadowing by the feature geometries is still a concern. Having available a wafer sputter regime or 'resputter' regime in a PVD tool allows for redistribution of metal from horizontal surfaces in the feature exposed to the plasma to vertical surfaces in the feature. The key in obtaining a wafer sputter regime is the operation of the plasma source in a range that the wafer bias power is effective at generating a sufficient self-bias for sputtering to occur. Discussed are modeling results which predict the wafer sputtering regime and the experimental confirmation that the low target power wafer sputter regime exists. The identified sputter regime in MPVD is such that there is a net deposition of metal at the field. Metal thickness reduction does occur at the trench and via bottoms where much of the unionized metal is being shadowed yielding a lower deposition to sputtering ratio compared to the field.

  10. The influence of carmustine wafer implantation on tumor bed cysts and peritumoral brain edema.

    PubMed

    Hasegawa, Yuzo; Iuchi, Toshihiko; Sakaida, Tsukasa; Yokoi, Sana; Kawasaki, Koichiro

    2016-09-01

    The development of perifocal edema and tumor bed cyst has been reported after implantation of biodegradable carmustine wafers for the treatment of malignant gliomas. We retrospectively evaluated these changes in a series of patients; 19 consecutive patients with malignant glioma who received carmustine wafer implantation at our hospital from January 2013 through July 2013, and 28 patients who underwent surgery prior to our institution's initiation of carmustine wafer implantation, as historical controls. The volume of the tumor bed cyst and perifocal edema was calculated on MRI acquired at four time points: ⩽72hours after surgery for baseline, and at 1-4, 5-8, and 9-12weeks after surgery. The volume of the tumor bed cyst in the wafer group increased significantly relative to the control group at all time points (p=0.04). Opening of the ventricle was inversely correlated with enlargement of the tumor bed cyst in the wafer group (p=0.04). The change in the volume of perifocal edema in the wafer group was not significantly different (p=0.48), but exhibited a considerable increase in patients with anaplastic oligodendroglioma relative to glioblastoma patients in the wafer group (p=0.01). We demonstrated significant enlargement of the tumor bed cyst volume after carmustine wafer implantation, as well as the development of marked perifocal edema in patients with anaplastic oligodendroglioma. PMID:27430412

  11. High-accuracy inspection of defects and profile of wafers by phase measuring deflectometry

    NASA Astrophysics Data System (ADS)

    Yue, Huimin; Wu, Yuxiang; Zhao, Biyu; Ou, Zhonghua; Liu, Yong

    2014-09-01

    The demands of the less-defective and high-flatness wafers are urgent in many wafer based technologies ranging from micro-electronics to the current photovoltaic industry. As the wafer becomes thinner and larger to cope with the advances in those industries, there is an increasing possibility of the emerging of crack and warp on the wafer surface. High-accuracy inspection of defects and profile are thus necessary to ensure the reliability of device. Phase measuring deflectometry(PMD) is a fast, cost-effective and high accuracy measurement technology which has been developed in recent years. As a slope measurement technology, PMD possesses a high sensitivity. Very small slope variation will lead to a large variation of the phase. PMD is very possible to have a good performance in the wafer inspection. In this paper, the requirements of the wafer inspection in the industries are discussed, and compatibility of PMD and those requirements is analyzed. In the experimental work, PMD gets the slope information of the wafer surface directly. The curvature or height information can be acquired simply by the derivation or integral of the slope. PMD is proved to make a superior result in high-precision defect detecting and shape measurement of wafer by the analysis of experiment results.

  12. The application of a crosslinked pectin-based wafer matrix for gradual buccal drug delivery.

    PubMed

    Shaikh, Rubina P; Pillay, Viness; Choonara, Yahya E; Du Toit, Lisa C; Ndesendo, Valence M K; Kumar, Pradeep; Khan, Riaz A

    2012-05-01

    The purpose of this study was to develop crosslinked wafer matrices and establish the influence of the crosslinker type and processing sequence on achieving gradual buccal drug delivery. Three sets of drug-loaded crosslinked pectin wafers were produced employing the model water-soluble antihistamine, diphenhydramine and were compared with noncrosslinked wafers. The formulations were crosslinked with CaCl(2), BaCl(2), or ZnSO(4) pre- or postlyophilization (sets 1 and 2) as well as pre- and postlyophilization (set 3), respectively. The surface morphology, porositometry, molecular vibrational transitions, textural attributes, thermal and in vitro drug release were characterized and supported by in silico molecular mechanics simulations. Results revealed that crosslinked wafers produced smaller pore sizes (107.63 Å) compared with noncrosslinked matrices (180.53 Å) due to molecular crosslinks formed between pectin chains. Drug release performance was dependent on the wafer crosslinking production sequence. Noncrosslinked wafers displayed burst-release with 82% drug released at t(30min) compared with first-order kinetic profiles obtained for prelyophilized crosslinked matrices (50% released at t(30min) followed by steady release). Wafers crosslinked postlyophilization displayed superior control of drug release (40% at t(30min)). Molecular mechanics simulations corroborated with the experimental data and established that Ba(++), having the largest atomic radii (1.35 Å) formed a number of ionic bridges producing wafers of higher porosity (0.048 cm(2)/g) and had more influence on drug release. PMID:22323418

  13. Nanotribology of nanooxide materials in ionic liquids on silicon wafers

    NASA Astrophysics Data System (ADS)

    Hamidunsani, Ahmad Termizi; Radiman, Shahidan; Hassan, Masjuki Haji; Rahman, Irman Abdul

    2015-09-01

    Nanotribological properties have a significant impact on daily life. Ionic liquids (ILs) are becoming new favourable lubricants currently in researches. Addition of nanooxide materials in lubricants provide improvements to new technology. In this study, we determine nanotribological properties of BMIM+BF4- IL addition of different amount of ZnO nanomaterial on single crystals silicon wafer (Si110). The viscosity changes of IL samples against temperature increase were determined by rheological method. Nanotribological properties were determined by changes in friction coefficient and wear rate on silicon substrate surfaces using a reciprocating friction and wear monitor in 1 hour duration time. Aluminium cylinders acted as pins used to rub Si (110) substrate sample surfaces. Thus, on range between 0 mg to 3.5 mg of ZnO nanooxide material dispersed in 10ml BMIM+BF4- showed a good friction coefficient, wear and surface roughness reduction.

  14. Chemical strategies for die/wafer submicron alignment and bonding.

    SciTech Connect

    Martin, James Ellis; Baca, Alicia I.; Chu, Dahwey; Rohwer, Lauren Elizabeth Shea

    2010-09-01

    This late-start LDRD explores chemical strategies that will enable sub-micron alignment accuracy of dies and wafers by exploiting the interfacial energies of chemical ligands. We have micropatterned commensurate features, such as 2-d arrays of micron-sized gold lines on the die to be bonded. Each gold line is functionalized with alkanethiol ligands before the die are brought into contact. The ligand interfacial energy is minimized when the lines on the die are brought into registration, due to favorable interactions between the complementary ligand tails. After registration is achieved, standard bonding techniques are used to create precision permanent bonds. We have computed the alignment forces and torque between two surfaces patterned with arrays of lines or square pads to illustrate how best to maximize the tendency to align. We also discuss complex, aperiodic patterns such as rectilinear pad assemblies, concentric circles, and spirals that point the way towards extremely precise alignment.

  15. Coherent Spin Transport through a 350Micron Thick Silicon Wafer

    NASA Astrophysics Data System (ADS)

    Huang, Biqin; Monsma, Douwe J.; Appelbaum, Ian

    2007-10-01

    We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13π precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

  16. Wafer-scale micro-optics replication technology

    NASA Astrophysics Data System (ADS)

    Rossi, Markus; Rudmann, Hartmut; Marty, Brigitte; Maciossek, Andreas

    2003-11-01

    For many high-volume applications of micro-optical elements and systems the most cost-effective fabrication technology is replication in polymer materials with techniques such as UV embossing, hot embossing, and injection molding. Replication significantly reduces the cost in volume production in comparison to silicon-based etched components. However, the temperature and humidity stability of most commercial polymers is not suitable for the application of replicated elements in areas such as telecom or datacom. A process based on UV-replication in chemically durable polymers has been developed. Technologies for all fabrication steps from mastering over tooling to replication on wafer-scale, post-processing and characterization are described. We present results of various projects with double-sided micro-optics for telecom/datacom and various sensor applications.

  17. Visible luminescence from silicon wafers subjected to stain etches

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; George, T.; Ksendzov, A.; Vasquez, R. P.

    1992-01-01

    Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. In this work, photoluminescence peaked in the red from stain-etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O was observed. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.

  18. Effect of lubricant environment on saw damage in silicon wafers

    NASA Technical Reports Server (NTRS)

    Kuan, T. S.; Shih, K. K.; Vanvechten, J. A.; Westdorp, W. A.

    1982-01-01

    The chemomechanical effect of lubricant environments on the inner diameter (ID) sawing induced surface damage in Si wafers was tested for four different lubricants: water, dielectric oil, and two commercial cutting solutions. The effects of applying different potential on Si crystals during the sawing were also tested. It is indicated that the number and depth of surface damage are sensitive to the chemical nature of the saw lubricant. It is determined that the lubricants that are good catalysts for breaking Si bonds can dampen the out of plane blade vibration more effectively and produce less surface damage. Correlations between the applied potential and the depth of damage in the dielectric oil and one of the commercial cutting solutions and possible mechanisms involved are discussed.

  19. Wafer-level hysteresis-free resonant carbon nanotube transistors.

    PubMed

    Cao, Ji; Bartsch, Sebastian T; Ionescu, Adrian M

    2015-03-24

    We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing. PMID:25752991

  20. Patterned wafer inspection using spatial filtering for the cluster environment.

    PubMed

    Taubenblatt, M A; Batchelder, J S

    1992-06-10

    Automated-process tool clusters are becoming increasingly prevalent in advanced semiconductor manufacturing plants, necessitating integrated inspection of patterned semiconductor wafers for defects and particulates. Integrated inspection tools must be small, sensitive, inexpensive, and fast in order to be compatible with the cluster environment. We show that intensity spatial filtering, with some refinements, can provide the required sensitivity and speed in a small, inexpensive package. By using dark-field illumination and a nonrectangular azimuthal orientation (e.g., 45 degrees ) to the primarily rectangular pattern, we show that the strongest diffraction from the pattern can be made to bypass the optical system entirely. This technique alleviates stringent scatter and antireflection requirements on the optics, and it permits the use of off-the-shelf components. PMID:20725290

  1. Arthroscopic wafer resection for ulnar impaction syndrome: prediction of outcomes.

    PubMed

    Meftah, Morteza; Keefer, Eric P; Panagopoulos, Georgia; Yang, S Steven

    2010-01-01

    Twenty-six patients with mean age of 38.5 (range 18-59), from 1998 to 2005, with ulnar impaction syndrome who failed nonoperative treatments were included in our study. Patients' age, history of previous wrist fracture, presence of MRI signs and ulnar variance were recorded as variables. Also, patients' postoperative strength (compared to the contralateral wrist) and pain relief were collected as outcome measurements. Twenty-two patients (84.6%) had either good or excellent pain relief (median 4, range 1-4). Significant correlation was found between MRI findings and postop pain relief (r = 0.53, p < or = 0.01). History of previous distal radius fractures was negatively correlated with pain relief (r = -0.50, p < or = 0.01). No correlation was found between postop strength and any of the variables. Presence of MRI signs of UIS is a predictor of good outcome in arthroscopic wafer resection. PMID:20672395

  2. A Wafer Transfer Technology for MEMS Adaptive Optics

    NASA Technical Reports Server (NTRS)

    Yang, Eui-Hyeok; Wiberg, Dean V.

    2001-01-01

    Adaptive optics systems require the combination of several advanced technologies such as precision optics, wavefront sensors, deformable mirrors, and lasers with high-speed control systems. The deformable mirror with a continuous membrane is a key component of these systems. This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. This technology is developed for the fabrication of a compact deformable mirror with a continuous facet. A 1 (mu)m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.5 (mu)m shows a vertical deflection of 0.37 (mu)m at 55 V.

  3. Characterization of semiconductor surface-emitting laser wafers

    SciTech Connect

    Gourley, P.L.; Vawter, G.A.; Brennan, T.M.; Hammons, B.E.

    1990-01-01

    The development of epitaxial semiconductor surface-emitting lasers has begun in recent years. These lasers are ultra-short (few {mu}m) Fabry-Perot resonators comprising epitaxial multilayer semiconductor mirrors and quantum well active regions. The resonators are single crystals grown along the lasing axis by molecular beam epitaxy (MBE) or chemical vapor deposition (CVD). They offer significant advances over conventional cleaved, edge-emitting lasers for creating lasers with single elements of 2 dimensional arrays, low beam divergence, engineered active regions, single longitudinal modes, and improved temperature characteristics. To realize the high potential of these new laser structures, techniques for characterizing the laser wafer after growth and between fabrication steps must be developed. In this paper we discuss several optical techniques that we have developed for this emerging surface-emitting laser technology.

  4. Institutional pressures, dynamic capabilities and environmental management systems: investigating the ISO 9000--environmental management system implementation linkage.

    PubMed

    Zhu, Qinghua; Cordeiro, James; Sarkis, Joseph

    2013-01-15

    We hypothesize a model where domestic and international institutional pressures lead to the successful implementation of ISO 9000 and can in turn lead to the successful implementation of environmental management systems such as ISO 14001 environmental certification systems or total quality environmental management (TQEM) systems. Using appropriate tests for mediation with dichotomous mediators and outcomes, we find that the model holds for a sample of 377 Chinese manufacturers in six major industrial groups in Suzhou, Dalian, and Tianjin. Our findings are consistent with the theory linking internal capabilities to heterogeneous external (in this case, institutional) pressures on organizations for environmentally proactive efforts. Our findings suggest that institutions in developing countries with significant environmental concerns such as China as well as foreign suppliers and partners to firms in these countries should encourage and support ISO 9000 implementations by local firms. These findings may influence other developing nations' adoption of quality and environmental process systems. PMID:23127965

  5. Magnetometory of AlGaN/GaN heterostructure wafers

    NASA Astrophysics Data System (ADS)

    Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

    2005-06-01

    AlGaN/GaN heterostructure wafers are becoming a key technology for next generation cellar-phone telecommunication system because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the extraordinary Hall effect measurement and the SQUID magnetometory of AlGaN/GaN heterostructure wafer at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540cm2/V s and 6.6 × 1012cm-2, respectively. In the extraordinary Hall effect measurement of AlGaN/GaN heterostructures, the hysteresis of Hall resistance appeared below 4.5 K and disappeared above 4.5 K. On the other hand, the hysteresis of magnetometric data obtained by SQUID magnetometory appears near zero magnetic field when the temperature is lower than 4.5 K. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears. And the slopes of magnetometric data with respect to magnetic field become lower as obeying Currie-Weiss law and the Curie temperature TC is 4.5 K. Agreement of TC measured by the extraordinary Hall effect and the SQUID magnetometory implies the ferromagnetism at the AlGaN/GaN heterojunction. However, the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

  6. Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process: Preprint

    SciTech Connect

    Johnston, S.; Yan, F.; Zaunbracher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

    2011-07-01

    Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finished cell performance.

  7. Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process

    SciTech Connect

    Johnston, S.; Yan, F.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

    2011-01-01

    Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finished cell performance.

  8. High performance LWIR microbolometer with Si/SiGe quantum well thermistor and wafer level packaging

    NASA Astrophysics Data System (ADS)

    Roer, Audun; Lapadatu, Adriana; Bring, Martin; Wolla, Erik; Hohler, Erling; Kittilsland, Gjermund

    2011-11-01

    An uncooled microbolometer with peak responsivity in the long wave infrared region of the electromagnetic radiation is developed at Sensonor Technologies. It is a 384 x 288 focal plane array with a pixel pitch of 25μm, based on monocrystalline Si/SiGe quantum wells as IR sensitive material. The high sensitivity (TCR) and low 1/f noise are the main performance characteristics of the product. The frame rate is maximum 60Hz and the output interface is digital (LVDS). The quantum well thermistor material is transferred to the read-out integrated circuit (ROIC) by direct wafer bonding. The ROIC wafer containing the released pixels is bonded in vacuum with a silicon cap wafer, providing hermetic encapsulation at low cost. The resulting wafer stack is mounted in a standard ceramic package. In this paper the architecture of the pixels and the ROIC, the wafer packaging and the electro-optical measurement results are presented.

  9. A universal process development methodology for complete removal of residues from 300mm wafer edge bevel

    NASA Astrophysics Data System (ADS)

    Randall, Mai; Linnane, Michael; Longstaff, Chris; Ueda, Kenichi; Winter, Tom

    2006-03-01

    Many yield limiting, etch blocking defects are attributed to "flake" type contamination from the lithography process. The wafer edge bevel is a prime location for generation of this type of defect. Wafer bevel quality is not readily observed with top down or even most off axis inspection equipment. Not all chemistries are removed with one "universal" cleaning process. IC manufacturers must maximize usable silicon area as well. These requirements have made traditional chemical treatments to clean the wafer edge inadequate for many chemistry types used in 193nm processing. IBM has evaluated a method to create a robust wafer bevel and backside cleaning process. An August Technology AXi TM Series advanced macro inspection tool with E20 TM edge inspection module has been used to check wafer bevel cleanliness. Process impact on the removal of post apply residues has been investigated. The new process used backside solvent rinse nozzles only and cleaned the wafer bevel completely. The use of the topside edge solvent clean nozzles was eliminated. Thickness, wet film defect measurements (wet FM), and pattern wafer defect monitors showed no difference between the new backside rinse edge bead removal process and the process of record. Solvent topside edge bead removal of both bottom anti-reflective coatings and resist materials showed better cut width control and uniformity. We conclude that the topside solvent edge bead removal nozzle can be removed from the process. Backside solvent rinse nozzles can clean the backside of the wafer, the wafer bevel, and can wrap to the front edge of the wafer to provide a uniform edge bead removal cut width that is not sensitive to coater module tolerances. Recommendations are made for changes to the typical preventive maintenance procedures.

  10. Teachers' Implementation of Pre-Constructed Dynamic Geometry Tasks in Technology-Intensive Algebra 1 Classrooms

    ERIC Educational Resources Information Center

    Cayton, Charity Sue-Adams

    2012-01-01

    Technology use and a focus on 21st century skills, coupled with recent adoption of Common Core State Standards for Mathematics, marks a new challenge for mathematics teachers. Communication, discourse, and tools for enhancing discourse (NCTM, 1991, 2000) play an integral role in successful implementation of technology and mathematics standards.…

  11. Creating a single twin boundary between two CdTe (111) wafers with controlled rotation angle by wafer bonding

    SciTech Connect

    Sun, Ce; Lu, Ning; Wang, Jinguo; Lee, Jihyung; Peng, Xin; Kim, Moon J.; Klie, Robert F.

    2013-12-16

    The single twin boundary with crystallographic orientation relationship (1{sup ¯}1{sup ¯}1{sup ¯})//(111) [01{sup ¯}1]//[011{sup ¯}] was created by wafer bonding. Electron diffraction patterns and high-resolution transmission electron microscopy images demonstrated the well control of the rotation angle between the bonded pair. At the twin boundary, one unit of wurtzite structure was found between two zinc-blende matrices. High-angle annular dark-field scanning transmission electron microscopy images showed Cd- and Te-terminated for the two bonded portions, respectively. The I-V curve across the twin boundary showed increasingly nonlinear behavior, indicating a potential barrier at the bonded twin boundary.

  12. Lattice constants of pure methane and carbon dioxide hydrates at low temperatures. Implementing quantum corrections to classical molecular dynamics studies.

    PubMed

    Costandy, Joseph; Michalis, Vasileios K; Tsimpanogiannis, Ioannis N; Stubos, Athanassios K; Economou, Ioannis G

    2016-03-28

    We introduce a simple correction to the calculation of the lattice constants of fully occupied structure sI methane or carbon dioxide pure hydrates that are obtained from classical molecular dynamics simulations using the TIP4PQ/2005 water force field. The obtained corrected lattice constants are subsequently used in order to obtain isobaric thermal expansion coefficients of the pure gas hydrates that exhibit a trend that is significantly closer to the experimental behavior than previously reported classical molecular dynamics studies. PMID:27036466

  13. Infrared differential interference contrast microscopy for overlay metrology on 3D-interconnect bonded wafers

    NASA Astrophysics Data System (ADS)

    Ku, Yi-sha; Shyu, Deh-Ming; Lin, Yeou-Sung; Cho, Chia-Hung

    2013-04-01

    Overlay metrology for stacked layers will be playing a key role in bringing 3D IC devices into manufacturing. However, such bonded wafer pairs present a metrology challenge for optical microscopy tools by the opaque nature of silicon. Using infrared microscopy, silicon wafers become transparent to the near-infrared (NIR) wavelengths of the electromagnetic spectrum, enabling metrology at the interface of bonded wafer pairs. Wafers can be bonded face to face (F2F) or face to back (F2B) which the stacking direction is dictated by how the stacks are carried in the process and functionality required. For example, Memory stacks tend to use F2B stacking enables a better managed design. Current commercial tools use single image technique for F2F bonding overlay measurement because depth of focus is sufficient to include both surfaces; and use multiple image techniques for F2B overlay measurement application for the depth of focus is no longer sufficient to include both stacked wafer surfaces. There is a need to specify the Z coordinate or stacking wafer number through the silicon when visiting measurement wafer sites. Two shown images are of the same (X, Y) but separate Z location acquired at focus position of each wafer surface containing overlay marks. Usually the top surface image is bright and clear; however, the bottom surface image is somewhat darker and noisier as an adhesive layer is used in between to bond the silicon wafers. Thus the top and bottom surface images are further processed to achieve similar brightness and noise level before merged for overlay measurement. This paper presents a special overlay measurement technique, using the infrared differential interference contrast (DIC) microscopy technique to measure the F2B wafer bonding overlay by a single shot image. A pair of thinned wafers at 50 and 150 μm thickness is bonded on top of a carrier wafer to evaluate the bonding overlay. It works on the principle of interferometry to gain information about the

  14. A coarse-graining approach for molecular simulation that retains the dynamics of the all-atom reference system by implementing hydrodynamic interactions

    SciTech Connect

    Markutsya, Sergiy; Lamm, Monica H

    2014-11-07

    We report on a new approach for deriving coarse-grained intermolecular forces that retains the frictional contribution that is often discarded by conventional coarse-graining methods. The approach is tested for water and an aqueous glucose solution, and the results from the new implementation for coarse-grained molecular dynamics simulation show remarkable agreement with the dynamics obtained from reference all-atom simulations. The agreement between the structural properties observed in the coarse-grained and all-atom simulations is also preserved. We discuss how this approach may be applied broadly to any existing coarse-graining method where the coarse-grained models are rigorously derived from all-atom reference systems.

  15. Implementation of 3-D isoparametric finite elements on supercomputer for the formulation of recursive dynamical equations of multi-body systems

    NASA Technical Reports Server (NTRS)

    Shareef, N. H.; Amirouche, F. M. L.

    1991-01-01

    A computational algorithmic procedure is developed and implemented for the dynamic analysis of a multibody system with rigid/flexible interconnected bodies. The algorithm takes into consideration the large rotation/translation and small elastic deformations associated with the rigid-body degrees of freedom and the flexibility of the bodies in the system respectively. Versatile three-dimensional isoparametric brick elements are employed for the modeling of the geometric configurations of the bodies. The formulation of the recursive dynamical equations of motion is based on the recursive Kane's equations, strain energy concepts, and the techniques of component mode synthesis. In order to minimize CPU-intensive matrix multiplication operations and speed up the execution process, the concepts of indexed arrays is utilized in the formulation of the equations of motion. A spin-up maneuver of a space robot with three flexible links carrying a solar panel is used as an illustrative example.

  16. Constant pH Replica Exchange Molecular Dynamics in Explicit Solvent Using Discrete Protonation States: Implementation, Testing, and Validation

    PubMed Central

    2015-01-01

    By utilizing Graphics Processing Units, we show that constant pH molecular dynamics simulations (CpHMD) run in Generalized Born (GB) implicit solvent for long time scales can yield poor pKa predictions as a result of sampling unrealistic conformations. To address this shortcoming, we present a method for performing constant pH molecular dynamics simulations (CpHMD) in explicit solvent using a discrete protonation state model. The method involves standard molecular dynamics (MD) being propagated in explicit solvent followed by protonation state changes being attempted in GB implicit solvent at fixed intervals. Replica exchange along the pH-dimension (pH-REMD) helps to obtain acceptable titration behavior with the proposed method. We analyzed the effects of various parameters and settings on the titration behavior of CpHMD and pH-REMD in explicit solvent, including the size of the simulation unit cell and the length of the relaxation dynamics following protonation state changes. We tested the method with the amino acid model compounds, a small pentapeptide with two titratable sites, and hen egg white lysozyme (HEWL). The proposed method yields superior predicted pKa values for HEWL over hundreds of nanoseconds of simulation relative to corresponding predicted values from simulations run in implicit solvent. PMID:24803862

  17. Design and Effectiveness of Intelligent Tutors for Operators of Complex Dynamic Systems: A Tutor Implementation for Satellite System Operators.

    ERIC Educational Resources Information Center

    Mitchell, Christine M.; Govindaraj, T.

    1990-01-01

    Discusses the use of intelligent tutoring systems as opposed to traditional on-the-job training for training operators of complex dynamic systems and describes the computer architecture for a system for operators of a NASA (National Aeronautics and Space Administration) satellite control system. An experimental evaluation with college students is…

  18. MATLAB implementation of a dynamic clamp with bandwidth >125 KHz capable of generating INa at 37°C

    PubMed Central

    Clausen, Chris; Valiunas, Virginijus; Brink, Peter R.; Cohen, Ira S.

    2012-01-01

    We describe the construction of a dynamic clamp with bandwidth >125 KHz that utilizes a high performance, yet low cost, standard home/office PC interfaced with a high-speed (16 bit) data acquisition module. High bandwidth is achieved by exploiting recently available software advances (code-generation technology, optimized real-time kernel). Dynamic-clamp programs are constructed using Simulink, a visual programming language. Blocks for computation of membrane currents are written in the high-level matlab language; no programming in C is required. The instrument can be used in single- or dual-cell configurations, with the capability to modify programs while experiments are in progress. We describe an algorithm for computing the fast transient Na+ current (INa) in real time, and test its accuracy and stability using rate constants appropriate for 37°C. We then construct a program capable of supplying three currents to a cell preparation: INa, the hyperpolarizing-activated inward pacemaker current (If), and an inward-rectifier K+ current (IK1). The program corrects for the IR drop due to electrode current flow, and also records all voltages and currents. We tested this program on dual patch-clamped HEK293 cells where the dynamic clamp controls a current-clamp amplifier and a voltage-clamp amplifier controls membrane potential, and current-clamped HEK293 cells where the dynamic clamp produces spontaneous pacing behavior exhibiting Na+ spikes in otherwise passive cells. PMID:23224681

  19. Evaluation of the Technical Feasibility and Effective Cost of Various Wafer Thicknesses for the Manufacture of Solar Cells

    NASA Technical Reports Server (NTRS)

    1979-01-01

    Fourteen wafering characterization runs were completed on a wire saw. Wafer thickness/taper uniformity was excellent. Several alternations and design adjustments were made, facilitating saw operation. A wafering characterization cycle was initiated, and is close to completion. A cell characterization cycle was initiated.

  20. Evaluation of the technical feasibility and effective cost of various wafer thicknesses for the manufacture of solar cells

    NASA Technical Reports Server (NTRS)

    1978-01-01

    Three wafering demonstration runs were completed on the Yasunaga wire saw. Wafer thickness/taper uniformity is excellent. Many small problems were encountered with Yasunaga accessories, slowing the effort. A wafer characterization cycle was defined and will be initiated during the next period.

  1. Brush Scrub Cleaning after Spraying Ozonized Water on Si Wafer Treated by Chemical Mechanical Polishing

    NASA Astrophysics Data System (ADS)

    Kurokawa, Yoshiaki; Hayashi, Kounosuke; Nishimura, Eriko; Saito, Reiko; Maki, Kunisuke

    2008-09-01

    To clean the surface of 300-mm-diameter silicon wafers treated by chemical mechanical polishing (CMP), the following steps were performed: (1) the wafer surfaces were first terminated with hydrogen using an etching solution of hydrofluoric acid, and (2) the wafers were then spun while ozonized water was sprayed before brush scrub cleaning was performed. The number of particles more than 100 nm in diameter remaining on the wafer decreased linearly with increasing time after spraying ozonized water for approximately 5 s before brush scrub cleaning. The wafers had fewer than 10 particles after spraying ozonized water for approximately 15 s followed by brush scrub cleaning. Such a cleaning effect was not accomplished when the ozonized water was not sprayed. A model of the brush scrub cleaning process is discussed from the view point that an oxide film is first formed on the wafer surface where no particles are adhered, and then grows laterally beneath the particles. The force then applied by the brush scrubber overcomes the adhesion force between the particles and the wafer, which results in their removal when the oxide layer reaches a sufficient thickness. The growth of the oxide film was confirmed by observing the spectra obtained by attenuated total reflectance spectroscopy (ATR) using a Fourier transform infrared spectroscope (FTIR) and by X-ray photoelectron spectroscopy (XPS).

  2. Therml & Gravitational Stress in Si Wafers; Lim. on Process Htg & Cool. Rates

    Energy Science and Technology Software Center (ESTSC)

    1997-01-14

    The MacWafer code determines maximum allowable processing temperatures and maximum heating and cooling rates for thermal processing of silicon semiconductor wafers in single and multiple wafer furnaces. The program runs interactively on Macintosh, PC, and workstation computers. Execution time is typically 20 seconds on a Macintosh 68040 processor operating at 33 MHz. Gravitational stresses and displacements are first calculated based on the user''s input of a support system consisting of a ring beneath the wafermore » and/or arbitrarily placed point supports. The maximum operating temperature is then deduced by comparing the calculated gravitational stresses with the temperature-dependent wafer strength. At lower temperatures, the difference between wafer strength and gravitational stress is used to determine the allowable thermal stress, and hence the allowable radial temperature difference across the wafer. Finally, an analytical model of radial heat transfer in a batch furnace yields the maximum heating or cooling rate as a function of the allowable temperature difference based on the user''s inputs of wafer spacing and furnace power. Outputs to the screen include plots of stress components and vertical displacement, as well as tables of maximum stresses and maximum heating and cooling rates as a function of temperature. All inputs and outputs may be directed to user-named files for further processing or graphical display.« less

  3. Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss

    PubMed Central

    Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

    2014-01-01

    The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping. PMID:24820403

  4. AWV: high-throughput cross-array cross-wafer variation mapping

    NASA Astrophysics Data System (ADS)

    Yeo, Jeong-Ho; Lee, Byoung-Ho; Lee, Tae-Yong; Greenberg, Gadi; Meshulach, Doron; Ravid, Erez; Levi, Shimon; Kan, Kobi; Shabtay, Saar; Cohen, Yehuda; Rotlevi, Ofer

    2008-03-01

    Minute variations in advanced VLSI manufacturing processes are well known to significantly impact device performance and die yield. These variations drive the need for increased measurement sampling with a minimal impact on Fab productivity. Traditional discrete measurements such as CDSEM or OCD, provide, statistical information for process control and monitoring. Typically these measurements require a relatively long time and cover only a fraction of the wafer area. Across array across wafer variation mapping ( AWV) suggests a new approach for high throughput, full wafer process variation monitoring, using a DUV bright-field inspection tool. With this technique we present a full wafer scanning, visualizing the variation trends within a single die and across the wafer. The underlying principle of the AWV inspection method is to measure variations in the reflected light from periodic structures, under optimized illumination and collection conditions. Structural changes in the periodic array induce variations in the reflected light. This information is collected and analyzed in real time. In this paper we present AWV concept, measurements and simulation results. Experiments were performed using a DUV bright-field inspection tool (UVision (TM), Applied Materials) on a memory short loop experiment (SLE), Focus Exposure Matrix (FEM) and normal wafers. AWV and CDSEM results are presented to reflect CD variations within a memory array and across wafers.

  5. Kerfless Silicon Precursor Wafer Formed by Rapid Solidification: October 2009 - March 2010

    SciTech Connect

    Lorenz, A.

    2011-06-01

    1366 Direct Wafer technology is an ultra-low-cost, kerfless method of producing crystalline silicon wafers compatible with the existing dominant silicon PV supply chain. By doubling utilization of silicon and simplifying the wafering process and equipment, Direct Wafers will support drastic reductions in wafer cost and enable module manufacturing costs < $1/W. This Pre-Incubator subcontract enabled us to accelerate the critical advances necessary to commercialize the technology by 2012. Starting from a promising concept that was initially demonstrated using a model material, we built custom equipment necessary to validate the process in silicon, then developed sufficient understanding of the underlying physics to successfully fabricate wafers meeting target specifications. These wafers, 50 mm x 50 mm x 200 ..mu..m thick, were used to make prototype solar cells via standard industrial processes as the project final deliverable. The demonstrated 10% efficiency is already impressive when compared to most thin films, but still offers considerable room for improvement when compared to typical crystalline silicon solar cells.

  6. Improvement of surface roughness in silicon-on-insulator wafer fabrication using a neutral beam etching

    NASA Astrophysics Data System (ADS)

    Min, T. H.; Park, B. J.; Kang, S. K.; Gweon, G. H.; Kim, Y. Y.; Yeom, G. Y.

    2009-08-01

    Silicon-on-insulator (SOI) wafers were etched by an energetic chlorine neutral beam obtained by the low-angle forward reflection of an ion beam, and the surface roughness of the etched wafers was compared with that of the SOI wafers etched by an energetic chlorine ion beam. When the ion beam was used to etch the silicon layer of the SOI wafers, the surface roughness was not significantly changed even though the use of higher ion bombardment energy slightly decreased the surface roughness of the SOI wafer. However, when the chlorine neutral beam was used instead of the chlorine ion beam having a similar beam energy, the surface roughness of the SOI wafer was significantly improved compared with that etched by the chlorine ion beam. By etching about 150 nm silicon from the SOI wafer having a 300 nm-thick top silicon layer with the chlorine neutral beam at the energy of 500 eV, the rms surface roughness of 1.5 Å could be obtained with the etch rate of about 750 Å min-1.

  7. Method and Apparatus for Obtaining a Precision Thickness in Semiconductor and Other Wafers

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor)

    2002-01-01

    A method and apparatus for processing a wafer comprising a material selected from an electrical semiconducting material and an electrical insulating material is presented. The wafer has opposed generally planar front and rear sides and a peripheral edge, wherein said wafer is pressed against a pad in the presence of a slurry to reduce its thickness. The thickness of the wafer is controlled by first forming a recess such as a dimple on the rear side of the wafer. A first electrical conducting strip extends from a first electrical connection means to the base surface of the recess to the second electrical connector. The first electrical conducting strip overlies the base surface of the recess. There is also a second electrical conductor with an electrical potential source between the first electrical connector and the second electrical connector to form. In combination with the first electrical conducting strip, the second electrical conductor forms a closed electrical circuit, and an electrical current flows through the closed electrical circuit. From the front side of the wafer the initial thickness of the wafer is reduced by lapping until the base surface of the recess is reached. The conductive strip is at least partially removed from the base surface to automatically stop the lapping procedure and thereby achieve the desired thickness.

  8. Carboxymethyl cellulose wafers containing antimicrobials: a modern drug delivery system for wound infections.

    PubMed

    Ng, Shiow-Fern; Jumaat, Nafisah

    2014-01-23

    Lyophilised wafers have been shown to have potential as a modern dressing for mucosal wound healing. The wafer absorbs wound exudates and transforms into a gel, thus providing a moist environment which is essential for wound healing. The objective of this study was to develop a carboxymethyl cellulose wafer containing antimicrobials to promote wound healing and treat wound infection. The pre-formulation studies began with four polymers, sodium carboxymethyl cellulose (NaCMC), methylcellulose (MC), sodium alginate and xanthan gum, but only NaCMC and MC were chosen for further investigation. The wafers were characterised by physical assessments, solvent loss, microscopic examination, swelling and hydration properties, drug content uniformity, drug release and efficacy of antimicrobials. Three of the antimicrobials, neomycin trisulphate salt hydrate, sulphacetamide sodium and silver nitrate, were selected as model drugs. Among the formulations, NaCMC wafer containing neomycin trisulphate exhibited the most desirable wound dressing characteristics (i.e., flexibility, sponginess, uniform wafer texture, high content drug uniformity) with the highest in vitro drug release and the greatest inhibition against both Gram positive and Gram negative bacteria. In conclusion, we successfully developed a NaCMC lyophilised wafer containing antimicrobials, and this formulation has potential for use in mucosal wounds infected with bacteria. PMID:24076463

  9. A self-priming, high performance, check valve diaphragm micropump made from SOI wafers

    NASA Astrophysics Data System (ADS)

    Kang, Jianke; Mantese, Joseph V.; Auner, Gregory W.

    2008-12-01

    In this paper, we describe a self-priming high performance piezoelectrically actuated check valve diaphragm micropump. The micropump was fabricated from three wafers: two silicon-on-insulator (SOI) wafers and one silicon wafer. A process named 'SOI/SOI wafer bonding and etching back followed by a second wafer bonding' was developed in order to make the core components of this device which included an inlet check valve, an outlet check valve, a diaphragm and a chamber. The movable structures of this device, i.e. the check valves and the diaphragm, were fabricated from the device layers of the two bonded SOI wafers. Taking advantages of SOI wafer technology and etch-stop layers, the vertical parameters of the movable structures were precisely controlled in fabrication. The micropump was self-priming without any pre-filling process. The pumping rate of the micropump was linearly adjustable from 0 to 650l µm min-1 by adjusting frequency. The maximum pumping rate was 860 µl min-1 and the maximum pumping pressure was approximately 10.5 psi. The power consumption of the device was less than 1.2 mW.

  10. Mystic: Implementation of the Static Dynamic Optimal Control Algorithm for High-Fidelity, Low-Thrust Trajectory Design

    NASA Technical Reports Server (NTRS)

    Whiffen, Gregory J.

    2006-01-01

    Mystic software is designed to compute, analyze, and visualize optimal high-fidelity, low-thrust trajectories, The software can be used to analyze inter-planetary, planetocentric, and combination trajectories, Mystic also provides utilities to assist in the operation and navigation of low-thrust spacecraft. Mystic will be used to design and navigate the NASA's Dawn Discovery mission to orbit the two largest asteroids, The underlying optimization algorithm used in the Mystic software is called Static/Dynamic Optimal Control (SDC). SDC is a nonlinear optimal control method designed to optimize both 'static variables' (parameters) and dynamic variables (functions of time) simultaneously. SDC is a general nonlinear optimal control algorithm based on Bellman's principal.

  11. Non-Hamiltonian molecular dynamics implementation of the Gibbs ensemble method. II. Molecular liquid-vapor results for carbon dioxide.

    PubMed

    Bratschi, Christoph; Huber, Hanspeter; Searles, Debra J

    2007-04-28

    The Gibbs ensemble molecular dynamics algorithm introduced in the preceding paper (paper I) [C. Bratschi and H. Huber, J. Chem. Phys. v126, 164104 (2007)] is applied to two recently published CO2 ab initio pair potentials, the Bock-Bich-Vogel and symmetry-adapted perturbation theory site-site potentials. The critical properties of these potentials are calculated for the first time. Critical values and points in the single and two-phase zones are compared with Monte Carlo results to demonstrate the accuracy of the molecular dynamics algorithm, and are compared with experiment to test the accuracy of the potentials. Pressure calculations in the liquid, gas, and supercritical states are carried out and are used to explain potential-related effects and systematic discrepancies. The best ab initio potential yields results in good agreement with experiment. PMID:17477587

  12. Non-Hamiltonian molecular dynamics implementation of the Gibbs ensemble method. II. Molecular liquid-vapor results for carbon dioxide

    NASA Astrophysics Data System (ADS)

    Bratschi, Christoph; Huber, Hanspeter; Searles, Debra J.

    2007-04-01

    The Gibbs ensemble molecular dynamics algorithm introduced in the preceding paper (paper I) [C. Bratschi and H. Huber, J. Chem. Phys. v126, 164104 (2007)] is applied to two recently published CO2 ab initio pair potentials, the Bock-Bich-Vogel and symmetry-adapted perturbation theory site-site potentials. The critical properties of these potentials are calculated for the first time. Critical values and points in the single and two-phase zones are compared with Monte Carlo results to demonstrate the accuracy of the molecular dynamics algorithm, and are compared with experiment to test the accuracy of the potentials. Pressure calculations in the liquid, gas, and supercritical states are carried out and are used to explain potential-related effects and systematic discrepancies. The best ab initio potential yields results in good agreement with experiment.

  13. Universal set of dynamically protected gates for bipartite qubit networks: Soft pulse implementation of the [[5,1,3

    NASA Astrophysics Data System (ADS)

    De, Amrit; Pryadko, Leonid P.

    2016-04-01

    We model repetitive quantum error correction (QEC) with the single-error-correcting five-qubit code on a network of individually controlled qubits with always-on Ising couplings. We use our previously designed universal set of quantum gates based on sequences of shaped decoupling pulses. In addition to being accurate quantum gates, the sequences also provide dynamical decoupling (DD) of low-frequency phase noise. The simulation involves integrating the unitary dynamics of six qubits over the duration of tens of thousands of control pulses, using classical stochastic phase noise as a source of decoherence. The combined DD and QEC protocol dramatically improves the coherence, with the QEC alone being responsible for more than an order of magnitude infidelity reduction.

  14. A physical framework for implementing virtual models of intracranial pressure and cerebrospinal fluid dynamics in hydrocephalus shunt testing.

    PubMed

    Venkataraman, Pranav; Browd, Samuel R; Lutz, Barry R

    2016-09-01

    OBJECTIVE The surgical placement of a shunt designed to resolve the brain's impaired ability to drain excess CSF is one of the most common treatments for hydrocephalus. The use of a dynamic testing platform is an important part of shunt testing that can faithfully reproduce the physiological environment of the implanted shunts. METHODS A simulation-based framework that serves as a proof of concept for enabling the application of virtual intracranial pressure (ICP) and CSF models to a physical shunt-testing system was engineered. This was achieved by designing hardware and software that enabled the application of dynamic model-driven inlet and outlet pressures to a shunt and the subsequent measurement of the resulting drainage rate. RESULTS A set of common physiological scenarios was simulated, including oscillations in ICP due to respiratory and cardiac cycles, changes in baseline ICP due to changes in patient posture, and transient ICP spikes caused by activities such as exercise, coughing, sneezing, and the Valsalva maneuver. The behavior of the Strata valve under a few of these physiological conditions is also demonstrated. CONCLUSIONS Testing shunts with dynamic ICP and CSF simulations can facilitate the optimization of shunts to be more failure resistant and better suited to patient physiology. PMID:27203135

  15. Nonlinear effect of debonding of wafer type piezoelectric actuator on the behaviour of Lamb wave

    NASA Astrophysics Data System (ADS)

    Yelve, Nitesh P.; Mitra, Mira; Mujumdar, P. M.

    2014-03-01

    In Lamb wave based techniques for damage detection, Piezoelectric Wafer (PW) transducers are often used for actuating Lamb wave. They offer advantages such as portability and, cost effectiveness. However, because of prolonged use, excessive voltage supply, or improper bonding onto the host structure, these PW actuators may get partially debonded from the host structure. In this paper, the nonlinear effect of this debonding on the behavior of Lamb wave manifested in the form of higher harmonics, is studied both experimentally and through Finite Element (FE) simulation. Augmented Lagrangian algorithm is used in FE simulation to solve the contact problem at the breathing debond. Three higher harmonics are observed in the experiments and also in the FE simulation. Morlet wavelet transform is implemented in the study for time-frequency analysis and the results are reported in the paper. Nonlinearity parameter β obtained from fundamental and second harmonics in the experiments and the simulation, is found to be increasing with increase in the debonding area. This shows that actuator debonding produces contact nonlinearity and thereby induces higher harmonics in the Lamb wave. Therefore, in damage detection using Lamb wave based nonlinear techniques, the higher harmonics produced may get influenced by the false higher harmonics produced by actuator debonding, leading to incorrect results. Also these false higher harmonics resulting from actuator debonding may show illusory presence of defect in a pristine material, if bonding of the actuator is not taken care of properly.

  16. Wafer-scale metasurface for total power absorption, local field enhancement and single molecule Raman spectroscopy

    PubMed Central

    Wang, Dongxing; Zhu, Wenqi; Best, Michael D.; Camden, Jon P.; Crozier, Kenneth B.

    2013-01-01

    The ability to detect molecules at low concentrations is highly desired for applications that range from basic science to healthcare. Considerable interest also exists for ultrathin materials with high optical absorption, e.g. for microbolometers and thermal emitters. Metal nanostructures present opportunities to achieve both purposes. Metal nanoparticles can generate gigantic field enhancements, sufficient for the Raman spectroscopy of single molecules. Thin layers containing metal nanostructures (“metasurfaces”) can achieve near-total power absorption at visible and near-infrared wavelengths. Thus far, however, both aims (i.e. single molecule Raman and total power absorption) have only been achieved using metal nanostructures produced by techniques (high resolution lithography or colloidal synthesis) that are complex and/or difficult to implement over large areas. Here, we demonstrate a metasurface that achieves the near-perfect absorption of visible-wavelength light and enables the Raman spectroscopy of single molecules. Our metasurface is fabricated using thin film depositions, and is of unprecedented (wafer-scale) extent. PMID:24091825

  17. Yield-driven multi-project reticle design and wafer dicing

    NASA Astrophysics Data System (ADS)

    Kahng, Andrew B.; Mandoiu, Ion; Xu, Xu; Zelikovsky, Alex

    2005-11-01

    The aggressive scaling of VLSI feature size and the pervasive use of advanced reticle enhancement technologies has lead to dramatic increases in mask costs, pushing prototype and low volume production designs at the limit of economic feasibility. Multiple project wafers (MPW), or "shuttle" runs, provide an attractive solution for such low volume designs, by providing a mechanism to share the cost of mask tooling among up to tens of designs. However, MPW reticle design and wafer dicing introduce complexities not encountered in typical, single-project wafers. Recent works on wafer dicing adopt some assumptions to reduce the problem complexity. Although using one or more assumptions makes the problem solvable, the feasibility or performance of the solutions may be degraded. Also, the delay cost associated with schedule alignment was ignored in all previous works. In this paper we propose a general MPW flow including four main steps: (1) schedule-aware project partitioning (2) multi-project reticle floorplanning, (3) wafer shot-map definition, and (4) wafer dicing plan definition. Our project partitioner provides the best trade-off between the mask cost and delay cost. Our reticle floorplaner can automatically clone a design to better fit given production volumes. The round wafer shot-map definition step allows extracting functional dies from partially printed reticle images. Finally, our dicing planner allows multiple side-to-side dicing plans for different wafers and image rows/columns within a wafer. Experiments on industry testcases show that our methods outperform significantly not only previous methods in the literature, but also reticle floorplans manually designed by experienced engineers.

  18. Multi-wafer bonding technology for the integration of a micromachined Mirau interferometer

    NASA Astrophysics Data System (ADS)

    Wang, Wei-Shan; Lullin, Justine; Froemel, Joerg; Wiemer, Maik; Bargiel, Sylwester; Passilly, Nicolas; Gorecki, Christophe; Gessner, Thomas

    2015-02-01

    The paper presents the multi-wafer bonding technology as well as the integration of electrical connection to the zscanner wafer of the micromachined array-type Mirau interferometer. A Mirau interferometer, which is a key-component of optical coherence tomography (OCT) microsystem, consists of a microlens doublet, a MOEMS Z-scanner, a focusadjustment spacer and a beam splitter plate. For the integration of this MOEMS device heterogeneous bonding of Si, glass and SOI wafers is necessary. Previously, most of the existing methods for multilayer wafer bonding require annealing at high temperature, i.e., 1100°C. To be compatible with MEMS devices, bonding of different material stacks at temperatures lower than 400°C has also been investigated. However, if more components are involved, it becomes less effective due to the alignment accuracy or degradation of surface quality of the not-bonded side after each bonding operation. The proposed technology focuses on 3D integration of heterogeneous building blocks, where the assembly process is compatible with the materials of each wafer stack and with position accuracy which fits optical requirement. A demonstrator with up to 5 wafers bonded lower than 400°C is presented and bond interfaces are evaluated. To avoid the complexity of through wafer vias, a design which creates electrical connections along vertical direction by mounting a wafer stack on a flip chip PCB is proposed. The approach, which adopts vertically-stacked wafers along with electrical connection functionality, provides not only a space-effective integration of MOEMS device but also a design where the Mirau stack can be further integrated with other components of the OCT microsystem easily.

  19. Ultrasound-assisted handling force reduction during the solar silicon wafers production.

    PubMed

    Saffar, S; Abdullah, A; Gouttebroze, S; Zhang, Z L

    2014-04-01

    Surface adhesion between wet wafers poses great challenges for silicon wafer handling. It has been shown that both the shear and normal handling forces of the solar silicon wafers can be dramatically reduced by using the ultrasound energy. Approximately 20 and 5 times reduction in horizontal and vertical forces were achieved by as low power as 10W, and a good agreement was found between the measured values and the predictions of a simple model for the effect of longitudinal vibration we developed. PMID:24434116

  20. W-Band On-Wafer Measurement of Uniplanar Slot-Type Antennas

    NASA Technical Reports Server (NTRS)

    Raman, Sanjay; Gauthier, Gildas P.; Rebeiz, Gabriel M.

    1997-01-01

    Uniplanar slot-type antennas such as coplanar waveguide fed single- and dual-polarized slot-ring antennas and double folded-slot antennas are characterized using a millimeter-wave network analyzer and on-wafer measurement techniques. The antennas are designed to be mounted on a dielectric lens to minimize power loss into substrate modes and realize high-gain antenna patterns. On-wafer measurements are performed by placing the antenna wafer on a thick dielectric spacer of similar e(sub t) and eliminating the reflection from the probe station chuck with time-domain gating. The measured results agree well with method-of-moments simulations.

  1. Wafer chamber having a gas curtain for extreme-UV lithography

    DOEpatents

    Kanouff, Michael P.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

  2. Development of a fixed abrasive slicing technique (FAST) for reducing the cost of photovoltaic wafers

    SciTech Connect

    Schmid, F. )

    1991-12-01

    This report examines a wafer slicing technique developed by Crystal Systems, Inc. that reduces the cost of photovoltaic wafers. This fixed, abrasive slicing technique (FAST) uses a multiwire bladepack and a diamond-plated wirepack; water is the coolant. FAST is in the prototype production stage and reduces expendable material costs while retaining the advantages of a multiwire slurry technique. The cost analysis revealed that costs can be decreased by making more cuts per bladepack and slicing more wafers per linear inch. Researchers studied the degradation of bladepacks and increased wirepack life. 21 refs.

  3. The removal of deformed submicron particles from silicon wafers by spin rinse and megasonics

    NASA Astrophysics Data System (ADS)

    Zhang, Fan; Busnaina, Ahmed A.; Fury, Michael A.; Wang, Shi-Qing

    2000-02-01

    In order to successfully clean particulate contamination from wafer surfaces, it is necessary to understand the adhesion and deformation between the particles and the substrate in contact. The adhesion and removal mechanisms of deformed submicron particles have not been addressed in many previous studies. Submicron polystyrene latex particles (0.1-0.5 µm) were deposited on silicon wafers and removed by spin rinse and megasonic cleanings. Particle rolling is identified as the major removal mechanism for the deformed submicron particles from silicon wafers. Megasonics provides larger streaming velocity because of the extremely thin boundary layer resulting in a larger removal force that is capable of achieving complete removal of contamination particles.

  4. Low temperature solder process to join a copper tube to a silicon wafer

    NASA Astrophysics Data System (ADS)

    Versteeg, Christo; Scarpim de Souza, Marcio

    2014-06-01

    With the application for wafer level packages, which could be Complementary Metal-Oxide-Semiconductor (CMOS) based, and which requires a reduced atmosphere, a copper tube connection to a vacuum pump and the package is proposed. The method evaluated uses laser assisted brazing of a solder, to join the copper tube to a silicon wafer. The method was applied to a silicon wafer coated with a metallic interface to bond to the solder. The hermeticity of the joint was tested with a helium leak rate tester and the bonding energy thermal extent was verified with a thin layer of indium that melted wherever the substrate temperature rose above its melting temperature.

  5. Hybrid MPI/OpenMP Implementation of the ORAC Molecular Dynamics Program for Generalized Ensemble and Fast Switching Alchemical Simulations.

    PubMed

    Procacci, Piero

    2016-06-27

    We present a new release (6.0β) of the ORAC program [Marsili et al. J. Comput. Chem. 2010, 31, 1106-1116] with a hybrid OpenMP/MPI (open multiprocessing message passing interface) multilevel parallelism tailored for generalized ensemble (GE) and fast switching double annihilation (FS-DAM) nonequilibrium technology aimed at evaluating the binding free energy in drug-receptor system on high performance computing platforms. The production of the GE or FS-DAM trajectories is handled using a weak scaling parallel approach on the MPI level only, while a strong scaling force decomposition scheme is implemented for intranode computations with shared memory access at the OpenMP level. The efficiency, simplicity, and inherent parallel nature of the ORAC implementation of the FS-DAM algorithm, project the code as a possible effective tool for a second generation high throughput virtual screening in drug discovery and design. The code, along with documentation, testing, and ancillary tools, is distributed under the provisions of the General Public License and can be freely downloaded at www.chim.unifi.it/orac . PMID:27231982

  6. Fast wafer-level detection and control of interconnect reliability

    NASA Astrophysics Data System (ADS)

    Foley, Sean; Molyneaux, James; Mathewson, Alan

    2000-08-01

    Many of the technological advances in the semiconductor industry have led to dramatic increases in device density and performance in conjunction with enhanced circuit reliability. As reliability is improved, the time taken to characterize particular failure modes with traditional test methods is getting substantially longer. Furthermore, semiconductor customers expect low product cost and fast time-to-market. The limits of traditional reliability testing philosophies are being reached and new approaches need to be investigated to enable the next generation of highly reliable products to be tested. This is especially true in the area of IC interconnect, where significant challenges are predicted for the next decade. A number of fast, wafer level test methods exist for interconnect reliability evaluation. The relative abilities of four such methods to detect the quality and reliability of IC interconnect over very short test times are evaluated in this work. Four different test structure designs are also evaluated and the results are bench-marked against conventional package level Median Time to Failure results. The Isothermal test method combine with SWEAT-type test structures is shown to be the most suitable combination for defect detection and interconnect reliability control over very short test times.

  7. Wafer-Scale Microwire Transistor Array Fabricated via Evaporative Assembly.

    PubMed

    Park, Jae Hoon; Sun, Qijun; Choi, Yongsuk; Lee, Seungwoo; Lee, Dong Yun; Kim, Yong Hoon; Cho, Jeong Ho

    2016-06-22

    One-dimensional (1D) nano/microwires have attracted significant attention as promising building blocks for various electronic and optical device applications. The integration of these elements into functional device networks with controlled alignment and density presents a significant challenge for practical device applications. Here, we demonstrated the fabrication of wafer-scale microwire field-effect transistor (FET) arrays based on well-aligned inorganic semiconductor microwires (indium-gallium-zinc-oxide (IGZO)) and organic polymeric insulator microwires fabricated via a simple and large-area evaporative assembly technique. This microwire fabrication method offers a facile approach to precisely manipulating the channel dimensions of the FETs. The resulting solution-processed monolithic IGZO microwire FETs exhibited a maximum electron mobility of 1.02 cm(2) V(-1) s(-1) and an on/off current ratio of 1 × 10(6). The appropriate choice of the polymeric microwires used to define the channel lengths enabled fine control over the threshold voltages of the devices, which were employed to fabricate high-performance depletion-load inverters. Low-voltage-operated microwire FETs were successfully fabricated on a plastic substrate using a high-capacitance ion gel gate dielectric. The microwire fabrication technique involving evaporative assembly provided a facile, effective, and reliable method for preparing flexible large-area electronics. PMID:27228025

  8. Adhesive disbond detection using piezoelectric wafer active sensors

    NASA Astrophysics Data System (ADS)

    Roth, William; Giurgiutiu, Victor

    2015-04-01

    The aerospace industry continues to increase the use of adhesives for structural bonding due to the increased joint efficiency (reduced weight), even distribution of the load path and decreases in stress concentrations. However, the limited techniques for verifying the strength of adhesive bonds has reduced its use on primary structures and requires an intensive inspection schedule. This paper discusses a potential structural health monitoring (SHM) technique for the detection of disbonds through the in situ inspection of adhesive joints. This is achieved through the use of piezoelectric wafer active sensors (PWAS), thin unobtrusive sensors which are permanently bonded to the aircraft structure. The detection method discussed in this study is electromechanical impedance spectroscopy (EMIS), a local vibration method. This method detects disbonds from the change in the mechanical impedance of the structure surrounding the disbond. This paper will discuss how predictive modeling can provide valuable insight into the inspection method, and provide better results than empirical methods alone. The inspection scheme was evaluated using the finite element method, and the results were verified experimentally using a large aluminum test article, and included both pristine and disbond coupons.

  9. Evolution of grain structures during directional solidification of silicon wafers

    NASA Astrophysics Data System (ADS)

    Lin, H. K.; Wu, M. C.; Chen, C. C.; Lan, C. W.

    2016-04-01

    The evolution of grain structures, especially the types of grain boundaries (GBs), during directional solidification is crucial to the electrical properties of multicrystalline silicon used for solar cells. To study this, the electric molten zone crystallization (EMZC) of silicon wafers at different drift speeds from 2 to 6 mm/min was considered. It was found that <111> orientation was dominant at the lower drift velocity, while <112> orientation at the higher drift velocity. Most of the non-∑GBs tended to align with the thermal gradient, but some tilted toward the unfavorable grains having higher interfacial energies. On the other hand, the tilted ∑3GBs tended to decrease during grain competition, except at the higher speed, where the twin nucleation became frequent. The competition of grains separated by ∑GBs could be viewed as the interactions of GBs that two coherent ∑3n GBs turned into one ∑3nGB following certain relations as reported before. On the other hand, when ∑ GBs met non-∑ GBs, the non-∑ GBs remained which explained the decrease of ∑ GBs at the lower speed.

  10. Designing defect spins for wafer-scale quantum technologies

    SciTech Connect

    Koehl, William F.; Seo, Hosung; Galli, Giulia; Awschalom, David D.

    2015-11-27

    The past decade has seen remarkable progress in the development of the nitrogen-vacancy (NV) defect center in diamond, which is one of the leading candidates for quantum information technologies. The success of the NV center as a solid-state qubit has stimulated an active search for similar defect spins in other technologically important and mature semiconductors, such as silicon carbide. If successfully combined with the advanced microfabrication techniques available to such materials, coherent quantum control of defect spins could potentially lead to semiconductor-based, wafer-scale quantum technologies that make use of exotic quantum mechanical phenomena like entanglement. In this article, we describe the robust spin property of the NV center and the current status of NV center research for quantum information technologies. We then outline first-principles computational modeling techniques based on density functional theory to efficiently search for potential spin defects in nondiamond hosts suitable for quantum information applications. The combination of computational modeling and experimentation has proven invaluable in this area, and we describe the successful interplay between theory and experiment achieved with the divacancy spin qubit in silicon carbide.

  11. Wafer-level self-packaged infrared microsensors

    NASA Astrophysics Data System (ADS)

    Mahmoud, Aamer; Dave, Aasutosh; Celik-Butler, Zeynep; Butler, Donald P.

    2004-08-01

    One common requirement of microbolometers fabricated on both rigid and flexible substrates is the need for vacuum packaging to eliminate the thermal conductivity of air and achieve high performance. However, vacuum packaging of microbolometers is expensive and is a limiting factor in achieving truly low-cost uncooled infrared detection. Vacuum packing of microbolometers on flexible substrates requires a novel approach unless flexibility is to be sacrificed. This paper explores the vacuum packaging of microbolometers through self-packaging. In this case, the micromachined encapsulation in a vacuum cavity is investigated through computer simulation of microbolometers in flexible polyimide films and through the encapsulation of microbolometers on rigid Si substrates with a Si3N4 shell. In this manner, self packaged uncooled microbolometers were fabricated on a Si wafer with semiconducting yttrium barium copper oxide (YBCO) as the infrared sensing material. The self-packaged structure is designed such that it can be covered with a superstrate, yielding low stress in the flexible skin sensors and better detection figures of merit. The devices have demonstrated voltage responsivities over 103 V/W, detectivities above 106 cm Hz1/2/W and temperature coefficient of resistance around -3.3% K-1. Computer simulations using CoventorWare and MEMulator have been used to determine suitable materials for the process, the optimum design of a vacuum element and a streamlined process flow.

  12. Wafer-level vacuum packaged resonant micro-scanning mirrors for compact laser projection displays

    NASA Astrophysics Data System (ADS)

    Hofmann, Ulrich; Oldsen, Marten; Quenzer, Hans-Joachim; Janes, Joachim; Heller, Martin; Weiss, Manfred; Fakas, Georgios; Ratzmann, Lars; Marchetti, Eleonora; D'Ascoli, Francesco; Melani, Massimiliano; Bacciarelli, Luca; Volpi, Emilio; Battini, Francesco; Mostardini, Luca; Sechi, Francesco; De Marinis, Marco; Wagner, Bernd

    2008-02-01

    Scanning laser projection using resonant actuated MEMS scanning mirrors is expected to overcome the current limitation of small display size of mobile devices like cell phones, digital cameras and PDAs. Recent progress in the development of compact modulated RGB laser sources enables to set up very small laser projection systems that become attractive not only for consumer products but also for automotive applications like head-up and dash-board displays. Within the last years continuous progress was made in increasing MEMS scanner performance. However, only little is reported on how mass-produceability of these devices and stable functionality even under harsh environmental conditions can be guaranteed. Automotive application requires stable MEMS scanner operation over a wide temperature range from -40° to +85°Celsius. Therefore, hermetic packaging of electrostatically actuated MEMS scanning mirrors becomes essential to protect the sensitive device against particle contamination and condensing moisture. This paper reports on design, fabrication and test of a resonant actuated two-dimensional micro scanning mirror that is hermetically sealed on wafer level. With resonant frequencies of 30kHz and 1kHz, an achievable Theta-D-product of 13mm.deg and low dynamic deformation <20nm RMS it targets Lissajous projection with SVGA-resolution. Inevitable reflexes at the vacuum package surface can be seperated from the projection field by permanent inclination of the micromirror.

  13. Thickness mode EMIS of constrained proof-mass piezoelectric wafer active sensors

    NASA Astrophysics Data System (ADS)

    Kamas, Tuncay; Giurgiutiu, Victor; Lin, Bin

    2015-11-01

    This paper addresses theoretical and experimental work on thickness-mode electromechanical (E/M) impedance spectroscopy (EMIS) of proof-mass piezoelectric wafer active sensors (PMPWAS). The proof-mass (PM) concept was used to develop a new method for tuning the ultrasonic wave modes and for relatively high frequency local modal sensing by the PM affixed on PWAS. In order to develop the theoretical basis of the PMPWAS tuning concept, analytical analyses were conducted by applying the resonator theory to derive the EMIS of a PWAS constrained on one and both surfaces by isotropic elastic materials. The normalized thickness-mode shapes were obtained for the normal mode expansion (NME) method to eventually predict the thickness-mode EMIS using the correlation between PMPWAS and the structural dynamic properties of the substrate. Proof-masses of different sizes and materials were used to tune the system resonance towards an optimal frequency point. The results were verified by coupled-field finite element analyses (CF-FEA) and experimental results. An application of the tuning effect of PM on the standing wave modes was discussed as the increase in PM thickness shifts the excitation frequency of the wave mode toward the surface acoustic wave (SAW) mode.

  14. Engine dynamic analysis with general nonlinear finite element codes. Part 2: Bearing element implementation overall numerical characteristics and benchmaking

    NASA Technical Reports Server (NTRS)

    Padovan, J.; Adams, M.; Fertis, J.; Zeid, I.; Lam, P.

    1982-01-01

    Finite element codes are used in modelling rotor-bearing-stator structure common to the turbine industry. Engine dynamic simulation is used by developing strategies which enable the use of available finite element codes. benchmarking the elements developed are benchmarked by incorporation into a general purpose code (ADINA); the numerical characteristics of finite element type rotor-bearing-stator simulations are evaluated through the use of various types of explicit/implicit numerical integration operators. Improving the overall numerical efficiency of the procedure is improved.

  15. Ab initio implementation of quantum trajectory mean-field approach and dynamical simulation of the N{sub 2}CO photodissociation

    SciTech Connect

    Xie, Binbin; Liu, Lihong; Cui, Ganglong; Fang, Wei-Hai; Cao, Jun; Feng, Wei; Li, Xin-qi

    2015-11-21

    In this work, the recently introduced quantum trajectory mean-field (QTMF) approach is implemented and employed to explore photodissociation dynamics of diazirinone (N{sub 2}CO), which are based on the high-level ab initio calculation. For comparison, the photodissociation process has been simulated as well with the fewest-switches surface hopping (FSSH) and the ab initio multiple spawning (AIMS) methods. Overall, the dynamical behavior predicted by the three methods is consistent. The N{sub 2}CO photodissociation at λ > 335 nm is an ultrafast process and the two C—N bonds are broken in a stepwise way, giving birth to CO and N{sub 2} as the final products in the ground state. Meanwhile, some noticeable differences were found in the QTMF, FSSH, and AIMS simulated time constants for fission of the C—N bonds, excited-state lifetime, and nonadiabatic transition ratios in different intersection regions. These have been discussed in detail. The present study provides a clear evidence that direct ab initio QTMF approach is one of the reliable tools for simulating nonadiabatic dynamics processes.

  16. Fabrication of capacitive absolute pressure sensor using Si-Au eutectic bonding in SOI wafer

    NASA Astrophysics Data System (ADS)

    Ryeol Lee, Kang; Kim, Kunnyun; Park, Hyo-Derk; Kim, Yong Kook; Choi, Seung-Woo; Choi, Woo-Beom

    2006-04-01

    A capacitive absolute pressure sensor was fabricated using a large deflected diaphragm with a sealed vacuum cavity formed by removing handling silicon wafer and oxide layers from a SOI wafer after eutectic bonding of a silicon wafer to the SOI wafer. The deflected displacements of the diaphragm formed by the vacuum cavity in the fabricated sensor were similar to simulation results. Initial capacitance values were about 2.18pF and 3.65pF under normal atmosphere, where the thicknesses of the diaphragm used to fabricate the vacuum cavity were 20 µm and 30 µm, respectively. Also, it was confirmed that the differences of capacitance value from 1000hPa to 5hPa were about 2.57pF and 5.35pF, respectively.

  17. On-wafer vector network analyzer measurements in the 220-325 Ghz frequency band

    NASA Technical Reports Server (NTRS)

    Fung, King Man Andy; Dawson, D.; Samoska, L.; Lee, K.; Oleson, C.; Boll, G.

    2006-01-01

    We report on a full two-port on-wafer vector network analyzer test set for the 220-325 GHz (WR3) frequency band. The test set utilizes Oleson Microwave Labs frequency extenders with the Agilent 8510C network analyzer. Two port on-wafer measurements are made with GGB Industries coplanar waveguide (CPW) probes. With this test set we have measured the WR3 band S-parameters of amplifiers on-wafer, and the characteristics of the CPW wafer probes. Results for a three stage InP HEMT amplifier show 10 dB gain at 235 GHz [1], and that of a single stage amplifier, 2.9 dB gain at 231 GHz. The approximate upper limit of loss per CPW probe range from 3.0 to 4.8 dB across the WR3 frequency band.

  18. {ital In} {ital situ} wafer temperature monitoring of silicon etching using diffuse reflectance spectroscopy

    SciTech Connect

    Booth, J.L.; Beard, B.T.; Stevens, J.E.; Blain, M.G.; Meisenheimer, T.L.

    1996-07-01

    Real time, {ital in} {ital situ} temperature measurements during chemical downstream etching of silicon wafers have been performed using a diffuse reflectance spectroscopy based sensor [Weilmeier {ital et} {ital al}., Can. J. Phys. {bold 69}, 422 (1991)]. The spectrometer has a spatial resolution of 1 cm{sup 2}, updates the temperature every 2 s, and has a temperature resolution of better than 1{degree}C. The thermal time constant the wafers and the thermally regulated electrostatic chuck (10{degree}C{lt}{ital T}{lt}90{degree}C) varied between 7 and 30 s depending on clamping and backside gas pressure. The exothermic etch process is accompanied by increases in the silicon wafer temperature consistent with the thermal conductivity conditions and with the etch chemistry. The temperature uniformity across the wafers was better than 2{degree}C during the entire etch process. {copyright} {ital 1996 American Vacuum Society}

  19. Photocatalytic water disinfection by simple and low-cost monolithic and heterojunction ceramic wafers.

    PubMed

    Makwana, Neel M; Hazael, Rachael; McMillan, Paul F; Darr, Jawwad A

    2015-06-01

    In this work, the photocatalytic disinfection of Escherichia coli (E. coli) using dual layer ceramic wafers, prepared by a simple and low-cost technique, was investigated. Heterojunction wafers were prepared by pressing TiO2 and WO3 powders together into 2 layers within a single, self-supported monolith. Data modelling showed that the heterojunction wafers were able to sustain the formation of charged species (after an initial "charging" period). In comparison, a wafer made from pure TiO2 showed a less desirable bacterial inactivation profile in that the rate decreased with time (after being faster initially). The more favourable kinetics of the dual layer system was due to superior electron-hole vectorial charge separation and an accumulation of charges beyond the initial illumination period. The results demonstrate the potential for developing simplified photocatalytic devices for rapid water disinfection. PMID:25976167

  20. Surface self-assembly of N-fluorenyl-9-methoxycarbonyl diphenylalanine on silica wafer.

    PubMed

    Liu, Yun; Xu, Xiao-Ding; Chen, Jing-Xiao; Cheng, Han; Zhang, Xian-Zheng; Zhuo, Ren-Xi

    2011-10-01

    N-Fluorenyl-9-methoxycarbonyl diphenylalanine (Fmoc-FF-OH) was chemically immobilized to the surface of silica wafer as the "seed". When immersing this peptide attached silica wafer into the dipeptide aqueous solution, the occurrence of a pH triggered surface self-assembly resulted in the formation of peptide nanorods on the surface of silica wafer. This surface self-assembly exhibited a dependence on the concentration of the dipeptide aqueous solution. It was proposed that the self-assembly of this dipeptide on the surface of silica wafer was similar to that in aqueous solution. In comparison with the conventional physical adsorption on the substrates, the chemically attached self-assembled nanorods exhibited much improved adsorption capacity on the substrate surface. PMID:21612897

  1. Influence of thermal load on 450 mm Si-wafer IPD during lithographic patterning

    NASA Astrophysics Data System (ADS)

    Peschel, Thomas; Kalkowski, Gerhard; Eberhardt, Ramona

    2012-03-01

    We report on Finite Element Modeling (FEM) of the influence of heat load due to the lithographic exposure on the inplane distortion (IPD) of 450 mm Si-wafers and hence on the effect of the heat load on the achievable image placement accuracy. Based on a scenario of electron beam writing at an exposure power of 20 mW, the thermo-mechanical behavior of the chuck and the attached Si wafer is modeled and used to derive corresponding IPD values. To account for the pin structured chuck surface, an effective layer model is derived. Different materials for the wafer chuck are compared with respect to their influence on wafer IPD and thermal characteristics of the exposure process. Guidelines for the selection of the chuck material und suggestions for its cooling and corrective strategies on e-beam steering during exposure are derived.

  2. A study of defects on EUV mask using blank inspection, patterned mask inspection, and wafer inspection

    SciTech Connect

    Huh, S.; Ren, L.; Chan, D.; Wurm, S.; Goldberg, K. A.; Mochi, I.; Nakajima, T.; Kishimoto, M.; Ahn, B.; Kang, I.; Park, J.-O.; Cho, K.; Han, S.-I.; Laursen, T.

    2010-03-12

    The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. yet link data is available for understanding native defects on real masks. In this paper, a full-field EUV mask is fabricated to investigate the printability of various defects on the mask. The printability of defects and identification of their source from mask fabrication to handling were studied using wafer inspection. The printable blank defect density excluding particles and patterns is 0.63 cm{sup 2}. Mask inspection is shown to have better sensitivity than wafer inspection. The sensitivity of wafer inspection must be improved using through-focus analysis and a different wafer stack.

  3. Electromagnetic field modeling for defect detection in 7 nm node patterned wafers

    NASA Astrophysics Data System (ADS)

    Zhu, Jinlong; Zhang, Kedi; Davoudzadeh, Nima; Wang, Xiaozhen; Goddard, Lynford L.

    2016-03-01

    By 2017, the critical dimension in patterned wafers will shrink down to 7 nm, which brings great challenges to optics-based defect inspection techniques, due to the ever-decreasing signal to noise ratio with respect to defect size. To continue pushing forward the optics-based metrology technique, it is of great importance to analyze the full characteristics of the scattering field of a wafer with a defect and then to find the most sensitive signal type. In this article, the vector boundary element method is firstly introduced to calculate the scattering field of a patterned wafer at a specific objective plane, after which a vector imaging theory is introduced to calculate the field at an image plane for an imaging system with a high numerical aperture objective lens. The above methods enable the effective modeling of the image for an arbitrary vectorial scattering electromagnetic field coming from the defect pattern of the wafer.

  4. Nanoetching process on silicon solar cell wafers during mass production for surface texture improvement.

    PubMed

    Ahn, Chisung; Kulkarni, Atul; Ha, Soohyun; Cho, Yujin; Kim, Jeongin; Park, Heejin; Kim, Taesung

    2014-12-01

    Major challenge in nanotechnology is to improve the solar cells efficiency. This can be achieved by controlling the silicon solar cell wafer surface structure. Herein, we report a KOH wet etching process along with an ultrasonic cleaning process to improve the surface texture of silicon solar cell wafers. We evaluated the KOH temperature, concentration, and ultra-sonication time. It was observed that the surface texture of the silicon solar wafer changed from a pyramid shape to a rectangular shape under edge cutting as the concentration of the KOH solution was increased. We controlled the etching time to avoid pattern damage and any further increase of the reflectance. The present study will be helpful for the mass processing of silicon solar cell wafers with improved reflectance. PMID:25971104

  5. Hydrogen-induced program threshold voltage degradation analysis in SONOS wafer

    NASA Astrophysics Data System (ADS)

    Lin, Qing; Zhao, Crystal; Sheng, Nan

    2016-02-01

    This paper studies the hydrogen-induced program state threshold voltage degradation in SONOS wafers, which ultimately impacts wafer sort test yield. During wafer sort step, all individual integrated circuits noted as die are tested for functional defects by applying special test patterns to them. The proportion between the passing die (good die) and the non-passing die (bad die) is sort yield. The different N2/H2 ratio in IMD1 alloy process yields differently at flash checkerboard test. And the SIMS curves were also obtained to depict the distribution profile of H+ in SONOS ONO stack structure. It is found that, the H+ accumulated in the interface between the Tunnel oxide and Si layer, contributes the charge loss in Oxynitride layer, which leads to the program threshold voltage degradation and even fall below lower specification limit, and then impacts the sort yield of SONOS wafers.

  6. Multi-wire slurry wafering demonstrations. [slicing silicon ingots for solar arrays

    NASA Technical Reports Server (NTRS)

    Chen, C. P.

    1978-01-01

    Ten slicing demonstrations on a multi-wire slurry saw, made to evaluate the silicon ingot wafering capabilities, reveal that the present sawing capabilities can provide usable wafer area from an ingot 1.05m/kg (e.g. kerf width 0.135 mm and wafer thickness 0.265 mm). Satisfactory surface qualities and excellent yield of silicon wafers were found. One drawback is that the add-on cost of producing water from this saw, as presently used, is considerably higher than other systems being developed for the low-cost silicon solar array project (LSSA), primarily because the saw uses a large quantity of wire. The add-on cost can be significantly reduced by extending the wire life and/or by rescue of properly plated wire to restore the diameter.

  7. Eutectic bonding of a Ti sputter coated, carbon aerogel wafer to a Ni foil

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; Kanna, R.L.

    1994-06-01

    The formation of high energy density, storage devices is achievable using composite material systems. Alternate layering of carbon aerogel wafers and Ni foils with rnicroporous separators is a prospective composite for capacitor applications. An inherent problem exists to form a physical bond between Ni and the porous carbon wafer. The bonding process must be limited to temperatures less than 1000{degrees}C, at which point the aerogel begins to degrade. The advantage of a low temperature eutectic in the Ni-Ti alloy system solves this problem. Ti, a carbide former, is readily adherent as a sputter deposited thin film onto the carbon wafer. A vacuum bonding process is then used to join the Ni foil and Ti coating through eutectic phase formation. The parameters required for successfld bonding are described along with a structural characterization of the Ni foil-carbon aerogel wafer interface.

  8. [The implementation of computer model in research of dynamics of proliferation of cells of thyroid gland follicle].

    PubMed

    Abduvaliev, A A; Gil'dieva, M S; Khidirov, B N; Saĭdalieva, M; Khasanov, A A; Musaeva, Sh N; Saatov, T S

    2012-04-01

    The article deals with the results of computational experiments in research of dynamics of proliferation of cells of thyroid gland follicle in normal condition and in the case of malignant neoplasm. The model studies demonstrated that the chronic increase of parameter of proliferation of cells of thyroid gland follicle results in abnormal behavior of numbers of cell cenosis of thyroid gland follicle. The stationary state interrupts, the auto-oscillations occur with transition to irregular oscillations with unpredictable cell proliferation and further to the "black hole" effect. It is demonstrated that the present medical biologic experimental data and theory propositions concerning the structural functional organization of thyroid gland on cell level permit to develop mathematical models for quantitative analysis of numbers of cell cenosis of thyroid gland follicle in normal conditions. The technique of modeling of regulative mechanisms of living systems and equations of cell cenosis regulations was used PMID:22768711

  9. Wafer dependence of Johnsen-Rahbek type electrostatic chuck for semiconductor processes

    NASA Astrophysics Data System (ADS)

    Qin, Shu; McTeer, Allen

    2007-09-01

    A Johnsen-Rahbek (J-R type) type electrostatic chuck (ESC) was found to be more sensitive to wafer conditions than classic ESC, including backside dielectric quality and thickness and doping level. The wafer backside dielectric may reduce the clamp force and increase the declamping time, depending on dielectric quality, dielectric thickness, and ESC configurations. These issues and their mechanisms are studied extensively and potential solutions are proposed.

  10. Fast integral rigorous modeling applied to wafer topography effect prediction on 2x nm bulk technologies

    NASA Astrophysics Data System (ADS)

    Michel, J.-C.; Le Denmat, J.-C.; Tishchenko, A.; Jourlin, Y.

    2014-03-01

    Reflection by wafer topography and underlying layers during optical lithography can cause unwanted overexposure in the resist [1]. In most cases, the use of bottom anti reflective coating limits this effect. However, this solution is not always suitable because of process complexity, cost and cycle time penalty, as for ionic implantation lithography process in 28nm bulk technology. As a consequence, computational lithography solutions are currently under development to simulate and correct wafer topographical effects [2], [3]. For ionic implantation source drain (SD) photolithography step, wafer topography influences resulting in implant pattern variation are various: active silicon areas, Poly patterns, Shallow Trench Isolation (STI) and topographical transitions between these areas. In 28nm bulk SD process step, the large number of wafer stack variations involved in implant pattern modulation implies a complex modeling of optical proximity effects. Furthermore, those topography effects are expected to increase with wafer stack complexity through technology node downscaling evolution. In this context, rigorous simulation can bring significant value for wafer topography modeling evolution in R and D process development environment. Unfortunately, classical rigorous simulation engines are rapidly run time and memory limited with pattern complexity for multiple under layer wafer topography simulation. A presentation of a fast rigorous Maxwell's equation solving algorithm integrated into a photolithography proximity effects simulation flow is detailed in this paper. Accuracy, run time and memory consumption of this fast rigorous modeling engine is presented through the simulation of wafer topography effects during ionic implantation SD lithography step in 28nm bulk technology. Also, run time and memory consumption comparison is shown between presented fast rigorous modeling and classical rigorous RCWA method through simulation of design of interest. Finally

  11. A front-end wafer-level microsystem packaging technique with micro-cap array

    NASA Astrophysics Data System (ADS)

    Chiang, Yuh-Min

    2002-09-01

    The back-end packaging process is the remaining challenge for the micromachining industry to commercialize microsystem technology (MST) devices at low cost. This dissertation presents a novel wafer level protection technique as a final step of the front-end fabrication process for MSTs. It facilitates improved manufacturing throughput and automation in package assembly, wafer level testing of devices, and enhanced device performance. The method involves the use of a wafer-sized micro-cap array, which consists of an assortment of small caps micro-molded onto a material with adjustable shapes and sizes to serve as protective structures against the hostile environments during packaging. The micro-cap array is first constructed by a micromachining process with micro-molding technique, then sealed to the device wafer at wafer level. Epoxy-based wafer-level micro cap array has been successfully fabricated and showed good compatibility with conventional back-end packaging processes. An adhesive transfer technique was demonstrated to seal the micro cap array with a MEMS device wafer. No damage or gross leak was observed while wafer dicing or later during a gross leak test. Applications of the micro cap array are demonstrated on MEMS, microactuators fabricated using CRONOS MUMPS process. Depending on the application needs, the micro-molded cap can be designed and modified to facilitate additional component functions, such as optical, electrical, mechanical, and chemical functions, which are not easily achieved in the device by traditional means. Successful fabrication of a micro cap array comprised with microlenses can provide active functions as well as passive protection. An optical tweezer array could be one possibility for applications of a micro cap with microlenses. The micro cap itself could serve as micro well for DNA or bacteria amplification as well.

  12. Mask CD uniformity metrology for logic patterning and its correlation to wafer data

    NASA Astrophysics Data System (ADS)

    Le Gratiet, Bertrand; Zékri, Raphaël.; Sundermann, Frank; Trautzsch, Thomas; Thaler, Thomas; Birkner, Robert; Buttgereit, Ute

    2012-06-01

    With the next technology nodes 193nm lithography is pushed to its utmost limits. The industry is forced to print at low k1 factor which goes along with a high MEEF. Additionally, new blank materials are being introduced for smaller nodes. From 4x node and beyond, global CD uniformity on wafer is getting more critical and becomes key factor to ensure a high yield in chip production. Advanced process control is required and correction strategies are applied to maintain tight wafer CD uniformity. Beside other parameters, like scanner and etch process, mask CD uniformity is one main contributor to the intra-field CD on wafer. To enable effective CDU correction strategies it is necessary to establish a mask CD uniformity metrology which shows a good correlation to wafer prints. Especially for logic pattern mask uniformity measurements to control intra-field CD uniformity becomes challenging. In this paper we will focus on mask CD uniformity measurement for logic application utilizing WLCD, which is based on aerial image technology. We will investigate 40nm node and 28nm node gate masks using 6% MoSi phase shifting mask and MoSi binary mask respectively. Furthermore, we will correlate the mask CD uniformity data to wafer data to evaluate the capability of WLCD to predict the intra-field wafer CD uniformity correctly in order to support feedforward correction strategies. We will show that WLCD shows an excellent correlation to wafer data. Additionally, we will provide an outlook on logic contact-hole masks showing first CD uniformity data and wafer correlation data.

  13. Electronically and ionically conductive porous material and method for manufacture of resin wafers therefrom

    DOEpatents

    Lin, YuPo J.; Henry, Michael P.; Snyder, Seth W.

    2011-07-12

    An electrically and ionically conductive porous material including a thermoplastic binder and one or more of anion exchange moieties or cation exchange moieties or mixtures thereof and/or one or more of a protein capture resin and an electrically conductive material. The thermoplastic binder immobilizes the moieties with respect to each other but does not substantially coat the moieties and forms the electrically conductive porous material. A wafer of the material and a method of making the material and wafer are disclosed.

  14. Electronically and ionically conductive porous material and method for manufacture of resin wafers therefrom

    DOEpatents

    Lin, YuPo J.; Henry, Michael P.; Snyder, Seth W.

    2008-11-18

    An electrically and ionically conductive porous material including a thermoplastic binder and one or more of anion exchange moieties or cation exchange moieties or mixtures thereof and/or one or more of a protein capture resin and an electrically conductive material. The thermoplastic binder immobilizes the moieties with respect to each other but does not substantially coat the moieties and forms the electrically conductive porous material. A wafer of the material and a method of making the material and wafer are disclosed.

  15. Implementation of a Phase Detection Algorithm for Dynamic Cardiac Computed Tomography Analysis Based on Time Dependent Contrast Agent Distribution

    PubMed Central

    Kendziorra, Carsten; Meyer, Henning; Dewey, Marc

    2014-01-01

    This paper presents a phase detection algorithm for four-dimensional (4D) cardiac computed tomography (CT) analysis. The algorithm detects a phase, i.e. a specific three-dimensional (3D) image out of several time-distributed 3D images, with high contrast in the left ventricle and low contrast in the right ventricle. The purpose is to use the automatically detected phase in an existing algorithm that automatically aligns the images along the heart axis. Decision making is based on the contrast agent distribution over time. It was implemented in KardioPerfusion – a software framework currently being developed for 4D CT myocardial perfusion analysis. Agreement of the phase detection algorithm with two reference readers was 97% (95% CI: 82–100%). Mean duration for detection was 0.020 s (95% CI: 0.018–0.022 s), which was times less than the readers needed (s, ). Thus, this algorithm is an accurate and fast tool that can improve work flow of clinical examinations. PMID:25545863

  16. Implementation of interior micro-CT on a carbon nanotube dynamic micro-CT scanner for lower radiation dose

    NASA Astrophysics Data System (ADS)

    Gong, Hao; Lu, Jianping; Zhou, Otto; Cao, Guohua

    2015-03-01

    Micro-CT is a high-resolution volumetric imaging tool that provides imaging evaluations for many preclinical applications. However, the relatively high cumulative radiation dose from micro-CT scans could lead to detrimental influence on the experimental outcomes or even the damages of specimens. Interior micro-computed tomography (micro- CT) produces exact tomographic images of an interior region-of-interest (ROI) embedded within an object from truncated projection data. It holds promises for many biomedical applications with significantly reduced radiation doses. Here, we present our first implementation of an interior micro-CT system using a carbon nanotube (CNT) field-emission microfocus x-ray source. The system has two modes - interior micro-CT mode and global micro-CT mode, which is realized with a detachable x-ray beam collimator at the source side. The interior mode has an effective field-of-view (FOV) of about 10mm in diameter, while for the global mode the FOV is about 40mm in diameter. We acquired CT data in these two modes from a mouse-sized phantom, and compared the reconstructed image qualities and the associated radiation exposures. Interior ROI reconstruction was achieved by using our in-house developed reconstruction algorithm. Overall, interior micro-CT demonstrated comparable image quality to the conventional global micro-CT. Radiation doses measured by an ion chamber show that interior micro-CT yielded significant dose reduction (up to 83%).

  17. Quantitative Myocardial Perfusion with Dynamic Contrast-Enhanced Imaging in MRI and CT: Theoretical Models and Current Implementation

    PubMed Central

    Handayani, A.; Dijkstra, H.; Prakken, N. H. J.; Slart, R. H. J. A.; Oudkerk, M.; Van Ooijen, P. M. A.; Vliegenthart, R.; Sijens, P. E.

    2016-01-01

    Technological advances in magnetic resonance imaging (MRI) and computed tomography (CT), including higher spatial and temporal resolution, have made the prospect of performing absolute myocardial perfusion quantification possible, previously only achievable with positron emission tomography (PET). This could facilitate integration of myocardial perfusion biomarkers into the current workup for coronary artery disease (CAD), as MRI and CT systems are more widely available than PET scanners. Cardiac PET scanning remains expensive and is restricted by the requirement of a nearby cyclotron. Clinical evidence is needed to demonstrate that MRI and CT have similar accuracy for myocardial perfusion quantification as PET. However, lack of standardization of acquisition protocols and tracer kinetic model selection complicates comparison between different studies and modalities. The aim of this overview is to provide insight into the different tracer kinetic models for quantitative myocardial perfusion analysis and to address typical implementation issues in MRI and CT. We compare different models based on their theoretical derivations and present the respective consequences for MRI and CT acquisition parameters, highlighting the interplay between tracer kinetic modeling and acquisition settings. PMID:27088083

  18. Quantitative Myocardial Perfusion with Dynamic Contrast-Enhanced Imaging in MRI and CT: Theoretical Models and Current Implementation.

    PubMed

    Pelgrim, G J; Handayani, A; Dijkstra, H; Prakken, N H J; Slart, R H J A; Oudkerk, M; Van Ooijen, P M A; Vliegenthart, R; Sijens, P E

    2016-01-01

    Technological advances in magnetic resonance imaging (MRI) and computed tomography (CT), including higher spatial and temporal resolution, have made the prospect of performing absolute myocardial perfusion quantification possible, previously only achievable with positron emission tomography (PET). This could facilitate integration of myocardial perfusion biomarkers into the current workup for coronary artery disease (CAD), as MRI and CT systems are more widely available than PET scanners. Cardiac PET scanning remains expensive and is restricted by the requirement of a nearby cyclotron. Clinical evidence is needed to demonstrate that MRI and CT have similar accuracy for myocardial perfusion quantification as PET. However, lack of standardization of acquisition protocols and tracer kinetic model selection complicates comparison between different studies and modalities. The aim of this overview is to provide insight into the different tracer kinetic models for quantitative myocardial perfusion analysis and to address typical implementation issues in MRI and CT. We compare different models based on their theoretical derivations and present the respective consequences for MRI and CT acquisition parameters, highlighting the interplay between tracer kinetic modeling and acquisition settings. PMID:27088083

  19. A wafer mapping technique for residual stress in surface micromachined films

    NASA Astrophysics Data System (ADS)

    Schiavone, G.; Murray, J.; Smith, S.; Desmulliez, M. P. Y.; Mount, A. R.; Walton, A. J.

    2016-09-01

    The design of MEMS devices employing movable structures is crucially dependant on the mechanical behaviour of the deposited materials. It is therefore important to be able to fully characterize the micromachined films and predict with confidence the mechanical properties of patterned structures. This paper presents a characterization technique that enables the residual stress in MEMS films to be mapped at the wafer level by using microstructures released by surface micromachining. These dedicated MEMS test structures and the associated measurement techniques are used to extract localized information on the strain and Young’s modulus of the film under investigation. The residual stress is then determined by numerically coupling this data with a finite element analysis of the structure. This paper illustrates the measurement routine and demonstrates it with a case study using electrochemically deposited alloys of nickel and iron, particularly prone to develop high levels of residual stress. The results show that the technique enables wafer mapping of film non-uniformities and identifies wafer-to-wafer differences. A comparison between the results obtained from the mapping technique and conventional wafer bow measurements highlights the benefits of using a procedure tailored to films that are non-uniform, patterned and surface-micromachined, as opposed to simple standard stress extraction methods. The presented technique reveals detailed information that is generally unexplored when using conventional stress extraction methods such as wafer bow measurements.

  20. Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance: Preprint

    SciTech Connect

    Johnston, S.; Yan, F.; Dorn, D.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Ounadjela, K.

    2012-06-01

    Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and defect-band emissions, which are longer-wavelength emissions from sub-bandgap transitions, are used to characterize wafer quality and defect content on starting multicrystalline silicon wafers and neighboring wafers processed at each step through completion of finished cells. Both PL imaging techniques spatially highlight defect regions that represent dislocations and defect clusters. The relative intensities of these imaged defect regions change with processing. Band-to-band PL on wafers in the later steps of processing shows good correlation to cell quality and performance. The defect band images show regions that change relative intensity through processing, and better correlation to cell efficiency and reverse-bias breakdown is more evident at the starting wafer stage as opposed to later process steps. We show that thermal processing in the 200 degrees - 400 degrees C range causes impurities to diffuse to different defect regions, changing their relative defect band emissions.