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Sample records for in2o3 thin films

  1. Preparation and characterization of oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites and their calcined thin films

    NASA Astrophysics Data System (ADS)

    Wang, Li-ping; Xu, Xu-dong; Wang, Jia-xing

    2015-05-01

    Oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites were prepared in oleylamine via decomposition of metal acetylacetonate precursors. Thin films of In2O3 and In2O3-SnO2 were obtained by spin-coating solutions of the oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites onto substrates and then calcining them. Transmission electron microspectroscopy, scanning electron microspectroscopy, atomic force microspectroscopy, X-ray diffraction, ultraviolet-visible absorption, and photoluminescence spectroscopy were used to investigate the properties of the nanoparticles and thin films. The In2O3 nanoparticles were cubic-phased spheres with a diameter of ~8 nm; their spectra exhibited a broad emission peak centered at 348 nm. The In2O3-SnO2 nanocomposites were co-particles composed of smaller In2O3 particles and larger SnO2 particles; their spectra exhibited a broad emission peak at 355 nm. After the In2O3-SnO2 nanocomposites were calcined at 400°C, the obtained thin films were highly transparent and conductive, with a thickness of 30-40 nm; the surfaces of the thin films were smooth and crack-free.

  2. Room temperature magneto-transport properties of nanocomposite Fe-In2O3 thin films

    NASA Astrophysics Data System (ADS)

    Tambasov, Igor A.; Gornakov, Kirill O.; Myagkov, Victor G.; Bykova, Liudmila E.; Zhigalov, Victor S.; Matsynin, Alexey A.; Yozhikova, Ekaterina V.

    2015-12-01

    A ferromagnetic Fe-In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe-In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe-In2O3 thin film had n=1.94·1020 cm-3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~-0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.

  3. Film thickness effect on fractality of tin-doped In2O3 thin films

    NASA Astrophysics Data System (ADS)

    Ţălu, Ştefan; Stach, Sebastian; Raoufi, Davood; Hosseinpanahi, Fayegh

    2015-09-01

    In this paper, based on atomic force microscopy (AFM) data the surface morphology of tin-doped In2O3 (ITO) thin films, prepared by electron beam deposition method on float glass substrates, was systematically investigated using the multifractal analysis. Topographical characterization of the ITO film surfaces was realized by a novel multifractal approach which may be applied for AFM data. Detailed surface characterization of the 3D surface topography was obtained using statistical parameters, according to the ISO 25178-2: 2012. Multifractal analysis of the film surfaces revealed that ITO thin films have a multifractal geometry. The generalized dimension D q and the singularity spectrum f( α) provided quantitative values that characterize the local scale properties of film surfaces at nanometer scale. Our results showed that the larger spectrum width Δ α (Δ α = α max - α min) of the multifractal spectra f( α) is related to the larger surface roughness. [Figure not available: see fulltext.

  4. Transport properties of transparent conducting oxide thin film, Nb:In2O3

    NASA Astrophysics Data System (ADS)

    Lozano, O.; Chen, Q. Y.; Chinta, P. V.; Wadekar, P. V.; Chu, L. H.; Wijesundera, D.; Chu, Wei-Kan; Seo, H. W.; Tu, L. W.; Chang, Y. S.; Pang, W. Y.; Lo, I. K.; Yeh, S. W.; Ho, N. J.

    2009-03-01

    Thin films of Nb-doped In2O3 were deposited on YSZ(001) by magnetron co-sputtering. The well-oriented thin films were studied as a function of Nb doping by x-ray diffraction, optical absorption spectroscopy and magneto-transport measurement. The optical transparency in the visible and infrared spectral ranges is 97-99% while the electrical resistivity is about 0.4 mφ-cm. The variation of these properties with respect to doping will be discussed in the context of scattering and optical transition mechanisms. *Also with Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China.

  5. Surface modification and characterization of electrosprayed Sn-doped In2O3 thin films.

    PubMed

    Koo, Bon-Ryul; Ahn, Hyo-Jin

    2014-12-01

    We synthesized Sn-doped In2O3 (Indium tin oxide, ITO) thin films using electrospray and spin-coating. Scanning electron microscopy, atomic force spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Hall-effect measurement, and UV-vis spectrophotometry measurements were performed to investigate the morphological, structural, chemical, electrical, and optical properties of the electrosprayed ITO films with a sol-layer coating for surface modification. To obtain the optimum performance of the resultant ITO thin films after surface modification, we heat-treated them at four different temperatures of 450 degrees C (sample A), 550 degrees C (sample B), 650 degrees C (sample C), and 750 degrees C (sample D) using microwave heating. Surface modified ITO thin films calcined at 550 degrees C (sample B) using electrospray and spin-coating are observed to have superior resistivity (9.9 x 10(-3) 2 Ω x cm) and optical transmittance (-92.08%) owing to the improved densification of the ITO surface by spin-coating and the formation of uniform ITO thin films by electrospraying. PMID:25971111

  6. Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films

    NASA Astrophysics Data System (ADS)

    Beji, Nasreddine; Ajili, Mejda; Turki, Najoua Kamoun

    2016-07-01

    Fluorine-doped indium oxide thin films (In2O3:F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed that fluorine doped In2O3 thin films exhibit a centered cubic structure with the (400) preferential orientation. The change of the preferential reflection plane from (222) to (400) was found after doping. The doping optimum concentration of thin film crystal structure is obtained witha fluorine ratio equal to 2 at.%. The crystallinity improvement of In2O3:F (2 at.%) film is detected after annealing at 200°C, 300°C, and 400°C in nitrogen gas for 45 min. Transmission and reflection spectra measurements were performed over the wavelength range of 250-2500 nm. The band gap energy increase from 3.10 eV to 3.45 eV was detected after treatment at 400°C. In parallel, the electrical resistivity, deduced from Hall effect measurements, decreases from 428.90 × 10-4 Ω cm to 6.58 × 10-4 Ω cm.

  7. Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films

    NASA Astrophysics Data System (ADS)

    Beji, Nasreddine; Ajili, Mejda; Turki, Najoua Kamoun

    2016-04-01

    Fluorine-doped indium oxide thin films (In2O3:F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed that fluorine doped In2O3 thin films exhibit a centered cubic structure with the (400) preferential orientation. The change of the preferential reflection plane from (222) to (400) was found after doping. The doping optimum concentration of thin film crystal structure is obtained witha fluorine ratio equal to 2 at.%. The crystallinity improvement of In2O3:F (2 at.%) film is detected after annealing at 200°C, 300°C, and 400°C in nitrogen gas for 45 min. Transmission and reflection spectra measurements were performed over the wavelength range of 250-2500 nm. The band gap energy increase from 3.10 eV to 3.45 eV was detected after treatment at 400°C. In parallel, the electrical resistivity, deduced from Hall effect measurements, decreases from 428.90 × 10-4 Ω cm to 6.58 × 10-4 Ω cm.

  8. Optical properties of undoped and tin-doped nanostructured In2O3 thin films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Fellahi, Nabil; Addou, Mohammed; Kachouane, Amina; El Jouad, Mohamed; Sofiani, Zouhair

    2016-05-01

    Tin-doped indium oxide (In2O3:Sn) thin films in different concentrations (Sn = 0, 3, 5, 8 at.%) were deposited by reactive chemical pulverisation spray pyrolysis on heated glass substrates at 500 °C. The effect of the tin dopant on the nonlinear optical properties was investigated using X-ray diffraction, transmission, electrical resistivity and third harmonic generation (THG). All films were polycrystalline, and crystallised in a cubic structure with a preferential orientation along the (400) direction. The Sn (5 at.%) doped In2O3 thin films exhibited a lower resistivity of 3 × 10-4 Ω cm, and higher transmission in the visible region of about 94%. Optical parameters, such as the extinction coefficient (k), refractive index (n) and energy band gap (Eg), were also studied to show the composition-dependence of tin-doped indium oxide films. The nonlinear properties of the In2O3:Sn thin films have been found to be influenced by doping concentration, and the best value of χ(3) = 3 × 10-11 (esu) was found for the 5 at.% doped sample. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  9. Influence of growth time on crystalline structure, morphologic and optical properties of In2O3 thin films

    NASA Astrophysics Data System (ADS)

    Attaf, A.; Bouhdjar, A.; Saidi, H.; Benkhetta, Y.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

    2015-03-01

    Indium oxide (In2O3) thin films are successfully deposited on glass substrate at different deposition timings by ultrasonic spray technique using Indium chloride (InCl3) material source witch is prepared with dissolvent Ethanol (C2H5-OH), the physical properties of these films are characterized by XRD, MEB,UV-visible. XRD analysis revealed that the films are polycrystalline in nature having centered cubic crystal structure and symmetry space group I213 with a preferred grain orientation along to (222) plane when the deposition time changes from 4 to 10 min but after t = 10 min, especially when t = 13 min we found that the majority of grains preferred the plane (400). The maximum value of grain size D = 61,51 nm is attained for In2O3 films grown at t =10 min. the average transmittance is about 72%, The optical gap energy is found to decrease from 3.8 to 3.66 eV with growth time Increased from 4 to 10 min but after t = 10 min the value of Eg will increase to 3.72 eV. A systematic study on the influence of growth time on the properties of In2O3 thin films deposited by ultrasonic spray at 400 °C has been reported.

  10. Sputtered In2O3 and ITO Thin Films Containing Zirconium

    SciTech Connect

    Gessert, T. A.; Yoshida, Y.; Fesenmaier, C. C.; Coutts, T. J.

    2009-01-01

    Additions of Zr to In{sub 2}O{sub 3} (IO) and In{sub 2}O{sub 3}:SnO{sub 2} (ITO) sputtered thin films are studied. We find that Zr allows IO-based films to maintain optical transparency as oxygen partial pressure in the sputter ambient decreases, and it also maintains high carrier concentration as the oxygen partial pressure increases. Applying this guidance could indicate pathways to improve film properties in large-area deposition systems. We also find that for films deposited at optimum oxygen partial pressure, the optical transparency of the IO-based films improves as Zr is added, especially in the near-infrared spectral region. Analysis of these films using Drude theory approximations indicate that optical improvement is due to an increase in dielectric permittivity caused by Zr addition. We propose that controlling dielectric permittivity may be an important strategy in improving other transparent conducting oxides (TCOs), as well as indicative of an important pathway to developing new TCOs.

  11. Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Suzuki, Norihiro; Kaneko, Kentaro; Fujita, Shizuo

    2013-02-01

    We report the fabrication of rhombohedral corundum-structured indium oxide (α-In2O3) thin films, which can complete a semiconductor quaternary alloy system with α-Al2O3 and α-Ga2O3, on sapphire substrates with α-Fe2O3 buffer layers. X-ray diffraction showed the formation of α-In2O3, and the α-In2O3 film exhibited n-type semiconductor properties with electron concentration of 1.2×1018 cm-3 and electron mobility of 83 cm2/Vs. The α-In2O3 took grain structure with the lateral sizes of 300-600 nm, and in a grain area α-In2O3 grew epitaxially on a sapphire substrate.

  12. Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors

    NASA Astrophysics Data System (ADS)

    Fujii, Mami N.; Ishikawa, Yasuaki; Ishihara, Ryoichi; van der Cingel, Johan; Mofrad, Mohammad R. T.; Bermundo, Juan Paolo Soria; Kawashima, Emi; Tomai, Shigekazu; Yano, Koki; Uraoka, Yukiharu

    2016-06-01

    In a previous work, we reported the high field effect mobility of ZnO-doped In2O3 (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii et al., Appl. Phys. Lett. 102, 122107 (2013)]. However, a deeper understanding of the effect of ELA on the IZO film characteristics based on crystallinity, carrier concentrations, and optical properties is needed to control localized carrier concentrations for fabricating self-aligned structures in the same oxide film and to adequately explain the physical characteristics. In the case of as-deposited IZO film used as the channel, a high carrier concentration due to a high density of oxygen vacancies was observed; such a film does not show the required TFT characteristics but can act as a conductive film. We achieved a decrease in the carrier concentration of IZO films by crystallization using ELA. This means that ELA can form localized conductive or semi-conductive areas on the IZO film. We confirmed that the reason for the carrier concentration decrease was the decrease of oxygen-deficient regions and film crystallization. The annealed IZO films showed nano-crystalline phase, and the temperature at the substrate was substantially less than the temperature limit for flexible films such as plastic, which is 50°C. This paves the way for the formation of self-aligned structures and separately formed conductive and semi-conductive regions in the same oxide film.

  13. Characterization of prepared In2O3 thin films: The FT-IR, FT-Raman, UV-Visible investigation and optical analysis.

    PubMed

    Panneerdoss, I Joseph; Jeyakumar, S Johnson; Ramalingam, S; Jothibas, M

    2015-08-01

    In this original work, the Indium oxide (In2O3) thin film is deposited cleanly on microscope glass substrate at different temperatures by spray pyrolysis technique. The physical properties of the films are characterized by XRD, SEM, AFM and AFM measurements. The spectroscopic investigation has been carried out on the results of FT-IR, FT-Raman and UV-Visible. XRD analysis exposed that the structural transformation of films from stoichiometric to non-stoichiometric orientation of the plane vice versa and also found that, the film is polycrystalline in nature having cubic crystal structure with a preferred grain orientation along (222) plane. SEM and AFM studies revealed that, the film with 0.1M at 500°C has spherical grains with uniform dimension. The complete vibrational analysis has been carried out and the optimized parameters are calculated using HF and DFT (CAM-B3LYP, B3LYP and B3PW91) methods with 3-21G(d,p) basis set. Furthermore, NMR chemical shifts are calculated by using the gauge independent atomic orbital (GIAO) technique. The molecular electronic properties; absorption wavelengths, excitation energy, dipole moment and frontier molecular orbital energies, molecular electrostatic potential energy (MEP) analysis and Polarizability first order hyperpolarizability calculations are performed by time dependent DFT (TD-DFT) approach. The energy excitation on electronic structure is investigated and the assignment of the absorption bands in the electronic spectra of steady compound is discussed. The calculated HOMO and LUMO energies showed the enhancement of energy gap by the addition of substitutions with the base molecule. The thermodynamic properties (heat capacity, entropy, and enthalpy) at different temperatures are calculated and interpreted in gas phase. PMID:25827760

  14. Characterization of prepared In2O3 thin films: The FT-IR, FT-Raman, UV-Visible investigation and optical analysis

    NASA Astrophysics Data System (ADS)

    Panneerdoss, I. Joseph; Jeyakumar, S. Johnson; Ramalingam, S.; Jothibas, M.

    2015-08-01

    In this original work, the Indium oxide (In2O3) thin film is deposited cleanly on microscope glass substrate at different temperatures by spray pyrolysis technique. The physical properties of the films are characterized by XRD, SEM, AFM and AFM measurements. The spectroscopic investigation has been carried out on the results of FT-IR, FT-Raman and UV-Visible. XRD analysis exposed that the structural transformation of films from stoichiometric to non-stoichiometric orientation of the plane vice versa and also found that, the film is polycrystalline in nature having cubic crystal structure with a preferred grain orientation along (2 2 2) plane. SEM and AFM studies revealed that, the film with 0.1 M at 500 °C has spherical grains with uniform dimension. The complete vibrational analysis has been carried out and the optimized parameters are calculated using HF and DFT (CAM-B3LYP, B3LYP and B3PW91) methods with 3-21G(d,p) basis set. Furthermore, NMR chemical shifts are calculated by using the gauge independent atomic orbital (GIAO) technique. The molecular electronic properties; absorption wavelengths, excitation energy, dipole moment and frontier molecular orbital energies, molecular electrostatic potential energy (MEP) analysis and Polarizability first order hyperpolarizability calculations are performed by time dependent DFT (TD-DFT) approach. The energy excitation on electronic structure is investigated and the assignment of the absorption bands in the electronic spectra of steady compound is discussed. The calculated HOMO and LUMO energies showed the enhancement of energy gap by the addition of substitutions with the base molecule. The thermodynamic properties (heat capacity, entropy, and enthalpy) at different temperatures are calculated and interpreted in gas phase.

  15. Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.

    PubMed

    Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Song, Hui; Kim, Tae Heon; Choi, Boran; Jung, Gun Young

    2016-06-01

    We demonstrated the effect of active layer (channel) thickness and annealing temperature on the electrical performances of Ga2O3-In2O3-ZnO (GIZO) thin film transistor (TFT) having nanoscale channel width (W/L: 500 nm/100 μm). We found that the electron carrier concentration of the channel was decreased significantly with increasing the annealing temperature (100 degrees C to 300 degrees C). Accordingly, the threshold voltage (V(T)) was shifted towards positive voltage (-12.2 V to 10.8 V). In case of channel thickness, the V(T) was shifted towards negative voltage with increasing the channel thickness. The device with channel thickness of 90 nm annealed at 200 degrees C revealed the best device performances in terms of mobility (10.86 cm2/Vs) and V(T) (0.8 V). The effect of channel length was also studied, in which the channel width, thickness and annealing temperature were kept constant such as 500 nm, 90 nm and 200 degrees C, respectively. The channel length influenced the on-current level significantly with small variation of V(T), resulting in lower value of on/off current ratio with increasing the channel length. The device with channel length of 0.5 μm showed enhanced on/off current ratio of 10(6) with minimum V(T) of 0.26 V. PMID:27427719

  16. High-Transparency Sputtered In2O3 and ITO Films Containing Zirconium (Presentation)

    SciTech Connect

    Gessert, T. A.; Yoshida, Y.; Fesenmaier, C. C.; Coutts, T. J.

    2007-10-01

    Our recent investigations have identified a method to produce ITO-like films that are less sensitive to variations in the oxygen-containing deposition ambient. Specifically, we are studying the effect of adding small amounts of Zr to both In2O3 and ITO ceramic sputtering targets.

  17. Thickness-Dependent Structural and Optoelectronic Properties of In2O3 Films Prepared by Spray Pyrolysis Technique

    NASA Astrophysics Data System (ADS)

    Khan, M. A. Majeed; Khan, Wasi

    2016-08-01

    In this work, nanostructured In2O3 thin films with thickness in the range of 40-160 nm were deposited on glass substrates by the chemical spray pyrolysis technique. The microstructural, surface morphology and optical properties were investigated as a function of film thickness through x-ray diffraction, scanning electron microscopy equipped with energy dispersive spectroscopy, atomic force microscopy, Raman spectroscopy, UV-visible spectroscopy and photoluminescence measurements. The x-ray diffraction analysis showed that the deposited films were polycrystalline in nature with a cubic structure having (222) as preferred orientation. The morphological analyses of the samples exhibited uniform and smooth surface of the films with systematical increments in the surface roughness with increasing film thickness. The grain size increased from 9 nm to 13 nm with increasing film thickness. Raman spectroscopy has been employed to study the crystalline quality and the structural disorder of the films. A blue-shift in the energy band gap ( E g) from 3.74 eV to 3.98 eV was observed with the increase of film thickness. Moreover, photoluminescence peaks of the In2O3 films appeared at 443 nm and 527 nm for all films. The thickness had a substantial influence on the microstructural and optical properties as well as on the luminescence intensity of the films. The strategy presented here indicates that the prepared films could be suitable candidates for optoelectronic device applications.

  18. Thickness-Dependent Structural and Optoelectronic Properties of In2O3 Films Prepared by Spray Pyrolysis Technique

    NASA Astrophysics Data System (ADS)

    Khan, M. A. Majeed; Khan, Wasi

    2016-05-01

    In this work, nanostructured In2O3 thin films with thickness in the range of 40-160 nm were deposited on glass substrates by the chemical spray pyrolysis technique. The microstructural, surface morphology and optical properties were investigated as a function of film thickness through x-ray diffraction, scanning electron microscopy equipped with energy dispersive spectroscopy, atomic force microscopy, Raman spectroscopy, UV-visible spectroscopy and photoluminescence measurements. The x-ray diffraction analysis showed that the deposited films were polycrystalline in nature with a cubic structure having (222) as preferred orientation. The morphological analyses of the samples exhibited uniform and smooth surface of the films with systematical increments in the surface roughness with increasing film thickness. The grain size increased from 9 nm to 13 nm with increasing film thickness. Raman spectroscopy has been employed to study the crystalline quality and the structural disorder of the films. A blue-shift in the energy band gap (E g) from 3.74 eV to 3.98 eV was observed with the increase of film thickness. Moreover, photoluminescence peaks of the In2O3 films appeared at 443 nm and 527 nm for all films. The thickness had a substantial influence on the microstructural and optical properties as well as on the luminescence intensity of the films. The strategy presented here indicates that the prepared films could be suitable candidates for optoelectronic device applications.

  19. Correlation between oxygen vacancies and magnetism in Fe-doped In2O3 films

    NASA Astrophysics Data System (ADS)

    An, Yukai; Wang, Shiqi; Feng, Deqiang; Wu, Zhonghua; Liu, Jiwen

    2013-07-01

    Correlation between oxygen vacancies and magnetic property in the as-deposited and annealed (In0.93Fe0.07)2O3 films has been investigated by X-ray diffraction, magnetization measurement, X-ray absorption near-edge structure and extend X-ray absorption fine structure. Magnetic measurement reveals that clear room temperature ferromagnetism is observed for the as-deposited film, in which the doped Fe ions substitute for In sites of the In2O3 lattice and Fe-related secondary phases or clusters as the source of ferromagnetism is safely ruled out. After high-temperature annealing in air, the crystalline structure of film and occupation sites of Fe ions keep unchanged, whereas the magnetic property has a dramatic decrease. Based on X-ray absorption near-edge spectroscopy analysis and multiple-scattering theoretical calculations, it is found that the content of oxygen vacancy of film remarkably decreases, even disappears by annealing in air, which resulting in greatly decreasing the ferromagnetism. These results further provide strong evidence that the oxygen vacancies play an important role in activating the ferromagnetic interactions in Fe-doped In2O3.

  20. In2O3-based multicomponent metal oxide films and their prospects for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Korotcenkov, G.; Brinzari, V.; Cho, B. K.

    2016-02-01

    Thermoelectric properties of In2O3-SnO2-based multi-component metal oxide films formed by spray pyrolysis method are studied. It is shown that the introduction of additional components such as gallium and zinc can control the parameters of the deposited layers. At that, the doping with gallium is more effective for optimization of the efficiency of the thermoelectric conversion. The explanation of the observed changes in the electro-physical and thermoelectric properties of the films at the composition change is given. It is found that the main changes in the properties of multicomponent metal oxide films take place at concentrations of dopants which correspond to their limit solubility in the dominant oxide.

  1. Tungsten-doped In 2O 3 transparent conductive films with high transmittance in near-infrared region

    NASA Astrophysics Data System (ADS)

    Yang, Ming; Feng, Jiahan; Li, Guifeng; Zhang, Qun

    2008-07-01

    Polycrystalline tungsten-doped In 2O 3 (IWO) thin films prepared by dc reactive magnetron sputtering exhibit the high transparency in near-infrared region. The optoelectrical properties of the films were investigated in terms of different oxygen contents. The average transmittance of the films at oxygen content from 3.3% to 8.3% is approximately 90% in near-infrared region from 700 to 2500 nm, and about 94% in visible region from 400 to 700 nm. The high transparency is ascribed to the low carrier concentration of less than 3.8×10 20 cm -3 of IWO films. The as-deposited IWO films with minimum resistivity of 3.1×10 -4 Ω cm were obtained at 6.7% oxygen content. Carrier mobility reaches its highest value of 67 cm 2 V -1 s -1. Indium tin oxide (ITO) thin film prepared under the same sputtering condition shows a similar resistivity of 3.2×10 -4 Ω cm but a much lower mobility of 21 cm 2 V -1 s -1 and high carrier concentration of 9.4×10 20 cm -3, with the average transmittance of about 48% in near-infrared region and about 92% in visible region.

  2. Effect of vacuum-annealing on the d0 ferromagnetism of undoped In2O3 films

    NASA Astrophysics Data System (ADS)

    Sun, Shaohua; Wu, Ping; Xing, Pengfei

    2012-09-01

    Vacuum-annealing was carried out on the pure indium oxide films deposited on Si (100) substrates by radiofrequency magnetron sputtering. Oxygen-deficiency states and room temperature d0 ferromagnetism were both detected in the as-grown and vacuum-annealed films. With more oxygen vacancies appeared through vacuum-annealing, the saturation magnetization increased rapidly from 0.5 to 5.5 emu/cm3. The connection between the highly oxygen-deficiency states and the strong magnetic moment suggests that oxygen vacancies play a crucial role in mediating the ferromagnetism in In2O3 films. We think that this d0 ferromagnetism mainly stems from V0+ and oxygen vacancy clusters in the interfaces or grain boundaries.

  3. High performance ethanol sensing films fabricated from ZnO and In2O3 nanofibers with a double-layer structure

    NASA Astrophysics Data System (ADS)

    Zhang, Xiao-Juan; Qiao, Guan-Jun

    2012-06-01

    ZnO and In2O3 nanofibers are synthesized via electrospinning methods, and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), infrared (IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The nanofibers are deposited on ceramic substrates to form sensing films with various structures (ZnO nanofiber films, ZnO-In2O3 nanofiber films, and ZnO-In2O3-ZnO nanofiber films), and their sensing properties are investigated at different temperatures. Compared with ZnO nanofiber films and ZnO-In2O3-ZnO nanofiber films, the obtained ZnO-In2O3 nanofiber films exhibit improved and excellent sensing properties to ethanol. The highest sensitivity (the ratio of sensor resistance in air to that in target ambience) of 25 is obtained when the ZnO-In2O3 films are exposed to 100 ppm ethanol at 210 °C, while the corresponding values are only 8 for ZnO nanofiber films at 300 °C and 17 for ZnO-In2O3-ZnO nanofiber films at 210 °C. Rapid sensing reactions are also obtained as the response and recovery times of ZnO-In2O3 nanofiber films to 100 ppm ethanol are only about 2 and 1 s, respectively. These high sensing performances are explained by referring the heterocontacts formed by the double-layer structure.

  4. ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber photovoltaics

    SciTech Connect

    Kaspar, Tiffany C.; Droubay, Timothy C.; Jaffe, John E.

    2011-12-28

    Band alignments were measured by x-ray photoelectron spectroscopy for thin films of ZnO on polycrystalline Sn:In2O3 (ITO) and single crystal CdTe. Hybrid density functional theory calculations of epitaxial zinc blende ZnO(001) on CdTe(001) were performed to compare with experiment. A conduction band offset of -0.6 eV was measured for ZnO/ITO, which is larger than desired for efficient electron injection. For ZnO/CdTe, the experimental conduction band offset of 0.25 eV is smaller than the calculated value of 0.67 eV, likely due to the TeOx layer at the ZnO/CdTe interface. The measured conduction band offset for ZnO/CdTe is favorable for photovoltaic devices.

  5. Fabrication of High-Performance Ultrathin In2O3 Film Field-Effect Transistors and Biosensors Using Chemical Lift-Off Lithography.

    PubMed

    Kim, Jaemyung; Rim, You Seung; Chen, Huajun; Cao, Huan H; Nakatsuka, Nako; Hinton, Hannah L; Zhao, Chuanzhen; Andrews, Anne M; Yang, Yang; Weiss, Paul S

    2015-01-01

    We demonstrate straightforward fabrication of highly sensitive biosensor arrays based on field-effect transistors, using an efficient high-throughput, large-area patterning process. Chemical lift-off lithography is used to construct field-effect transistor arrays with high spatial precision suitable for the fabrication of both micrometer- and nanometer-scale devices. Sol-gel processing is used to deposit ultrathin (∼4 nm) In2O3 films as semiconducting channel layers. The aqueous sol-gel process produces uniform In2O3 coatings with thicknesses of a few nanometers over large areas through simple spin-coating, and only low-temperature thermal annealing of the coatings is required. The ultrathin In2O3 enables construction of highly sensitive and selective biosensors through immobilization of specific aptamers to the channel surface; the ability to detect subnanomolar concentrations of dopamine is demonstrated. PMID:25798751

  6. Investigation of local structural environments and room-temperature ferromagnetism in (Fe,Cu)-codoped In2O3 diluted magnetic oxide films.

    PubMed

    An, Yukai; Xing, Yaya; Pan, Fei; Wu, Zhonghua; Liu, Jiwen

    2016-05-11

    The local structural, optical, magnetic and transport properties of (In0.95-xFexCu0.05)2O3 (0.06 ≤ x ≤ 0.20) films deposited by RF-magnetron sputtering have been systemically studied by different experimental techniques. Detailed structural analyses using XRD, XPS, EXAFS and full multiple-scattering ab initio theoretical calculations of Fe K-edge XANES show that the (In0.95-xFexCu0.05)2O3 films have the same cubic bixbyite structure as pure In2O3. The doped Fe ions exist at both +2 and +3 oxidation states, substituting for the In(3+) sites in the In2O3 lattice and forming a FeIn + 2VO complex with the O vacancy in the first coordination shell of Fe. However, the co-doped Cu atoms are not incorporated into the In2O3 lattice and form the Cu metal clusters due to high ionization energy. UV-Vis measurements show that the optical band gap Eg decreases monotonically with the increase of Fe concentration, implying an increasing s-pd exchange interaction in the films. All the films display intrinsic room-temperature (RT) ferromagnetism and the saturated magnetization (Ms) increases monotonically with Fe doping. The temperature dependence of the resistivity data suggests the conduction mechanism of Mott variable-range hopping (VRH) at low temperature, confirming that the carriers are localized. It can be concluded that the observed RT ferromagnetism in the films originates from the overlapping of polarons mediated by oxygen vacancies based on the bound magnetic polaron (BMP) model. The variation of the localization effect of carriers with Fe doping can obviously adjust the magnetic exchange interaction in the (In0.95-xFexCu0.05)2O3 films. PMID:27139011

  7. Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell

    PubMed Central

    Mahalingam, S.; Abdullah, H.; Shaari, S.; Muchtar, A.; Asshari, I.

    2015-01-01

    Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC. PMID:26146652

  8. Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell.

    PubMed

    Mahalingam, S; Abdullah, H; Shaari, S; Muchtar, A; Asshari, I

    2015-01-01

    Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450 °C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450 °C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC. PMID:26146652

  9. Influence of heat treatment on characteristics of In2O3/Ag/MoO3 multilayer films as transparent anode for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Varnamkhasti, Mohsen Ghasemi; Shahriari, Esmaeil

    2015-09-01

    In this study, In2O3/Ag/MoO3 (IAM) nano-multilayer films are designed, and optimum thickness of each layer is calculated. These films were deposited by thermal evaporation technique and then annealed in air atmosphere at different temperatures for 1 h. The effects of annealing temperature on electrical, optical, and structural properties of the IAM system were investigated. The UV-visible-near-IR transmittance and reflectance spectra confirmed that the annealing temperature has significant influence on the electro-optical characteristics of IAM films. High-quality IAM films with a low sheet resistance of 8.2 (Ω/□) and the maximum optical transmittance of 85 % at 120 °C annealing temperature were obtained. The effect of heat treatment on surface roughness of the layers was also investigated. Figure-of-merit quantity showed that the IAM films annealed at 120 °C have the best performance. X-ray diffraction patterns showed that the crystallinity of the structures enhanced with increase in annealing temperature. Organic light-emitting diodes (OLEDs) were fabricated on IAM anodes. The current density-voltage-luminance (J-V-L) characteristic measurements show that the electroluminescence performances of OLED with IAM anode are improved compared with the conventional ITO-based device. The results indicate that the designed system is suitable for use as transparent conductive anode in optoelectronic devices.

  10. Investigation of extended-gate field-effect transistor pH sensors based on different-temperature-annealed bi-layer MWCNTs-In2O3 films

    PubMed Central

    2014-01-01

    In this paper, indium (In) films were deposited on glass substrates using DC sputtering method. Multiwalled carbon nanotubes (MWCNTs) and dispersant were dissolved in alcohol, and the mixed solution was deposited on the In films using the spray method. The bi-layer MWCNTs-In2O3 films were annealed at different temperatures (from room temperature to 500°C) in O2 atmosphere. The influences of annealing temperature on the characteristics of the bi-layer MWCNTs-In2O3 films were investigated by scanning electron microscopy, X-ray diffraction pattern, Fourier transform infrared (FT-IR) spectroscopy, and Raman spectroscopy. A separative extended-gate field-effect transistor (EGFET) device combined with a bi-layer MWCNTs-In2O3 film was constructed as a pH sensor. The influences of different annealing temperatures on the performances of the EGFET-based pH sensors were investigated. We would show that the pH sensitivity was dependent on the thermal oxygenation temperature of the bi-layer MWCNTs-In2O3 films. PMID:25288911

  11. Compensating vacancy defects in Sn- and Mg-doped In2O3

    NASA Astrophysics Data System (ADS)

    Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; Galazka, Z.

    2014-12-01

    MBE-grown Sn- and Mg-doped epitaxial In2O3 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy and compared to a bulk crystal reference. Samples were subjected to oxygen or vacuum annealing and the effect on vacancy type defects was studied. Results indicate that after oxygen annealing the samples are dominated by cation vacancies, the concentration of which changes with the amount of doping. In highly Sn-doped In2O3 , however, these vacancies are not the main compensating acceptor. Vacuum annealing increases the size of vacancies in all samples, possibly by clustering them with oxygen vacancies.

  12. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  13. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  14. Transparent electrically conducting thin films for spacecraft temperature control applications

    NASA Technical Reports Server (NTRS)

    Hass, G.; Heaney, J. B.; Toft, A. R.

    1979-01-01

    Thin transparent films of In2O3 or In2O3 + SnO2 prepared by evaporation or sputtering have been tested for use as surface layers for spacecraft temperature control coatings. The films are intended to prevent nonuniform electric charge buildup on the spacecraft exterior. Film thicknesses of 300 to 500 A were found to be optimal in terms of durability and minimum impact on the solar absorptance and the thermal emissivity of the underlayers. As a verification of their suitability for long-duration space missions, the films were subjected to simulated solar UV plus proton irradiation in a vacuum.

  15. Influence of SiO2/In2O3 film acoustical waveguide on the mode index of Ti:LiNbO3 optical waveguide in acousto-optical mode converter

    NASA Astrophysics Data System (ADS)

    Lin, Hang-you; Ning, Ji-ping; Geng, Fan

    2004-04-01

    TE/TM mode converter is a key element of integrated acoustooptical tunable filter (AOTF). Employing SiO2/In2O3 film as acoustical waveguide can suppress sidelobes effectively and simplify fabrication technique in integrated quasi-collinear AOTF. In this report, the eigenvalue equation and the field solution of such configuration has been obtained by using modified Wenzel-Kramers-Brillouin (WKB) method. The results are compared with those by using vector finite element method (VFEM). When the optical waveguides are covered by such oxide film, the difference of mode indices of both polarizations and the effective propagation velocity of surface acoustical wave (SAW) will decrease, and these decreases lead the shift of optical wavelength, which mainly results in the change of the former.

  16. Thin Films

    NASA Astrophysics Data System (ADS)

    Naffouti, Wafa; Nasr, Tarek Ben; Mehdi, Ahmed; Kamoun-Turki, Najoua

    2014-11-01

    Titanium dioxide (TiO2) thin films were synthesized on glass substrates by spray pyrolysis. The effect of solution flow rate on the physical properties of the films was investigated by use of x-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy (AFM), and spectrophotometry techniques. XRD analysis revealed the tetragonal anatase phase of TiO2 with highly preferred (101) orientation. AFM images showed that grain size on top of TiO2 thin films depended on solution flow rate. An indirect band gap energy of 3.46 eV was determined by means of transmission and reflection measurements. The envelope method, based on the optical transmission spectrum, was used to determine film thickness and optical constants, for example real and imaginary parts of the dielectric constant, refractive index, and extinction coefficient. Ultraviolet and visible photoluminescence emission peaks were observed at room temperature. These peaks were attributed to the intrinsic emission and to the surface defect states, respectively.

  17. Synthesis, characterization, photocatalytic activity and ethanol-sensing properties of In2O3 and Eu3+:In2O3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Anand, Kanica; Thangaraj, R.; Kumar, Praveen; Kaur, Jasmeet; Singh, R. C.

    2015-05-01

    In the present endeavor, Indium oxide (In2O3) and Europium doped In2O3 (In2O3:0.5%Eu3+ and In2O3:5%Eu3+) nanoparticles were prepared by co-precipitation method. Synthesized nanoparticles were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and UV-Visible spectrophotometry (UV-vis). XRD revealed that nanoparticles were of pure bixbyite-type cubic phase and the crystallite size decreased with the Eu3+ doping. SEM micrographs showed that particles were spherical in shape. Synthesized nanoparticles were used for photo degradation of methylene blue (MB) dye under sunlight and the results clearly showed that In2O3:5%Eu3+ nanoparticles exhibited higher activity than pure In2O3 nanoparticles. For gas sensing characteristics, the nanoparticles were applied as thick film onto alumina substrate and tested at different operating temperatures. The results showed that the optimum operating temperature of the gas sensors prepared from synthesized nanoparticles is 300°C. The investigations revealed that the addition of Eu3+ as a dopant enhanced the sensing response of In2O3 nanoparticles appreciably.

  18. Structural, electrical, and optical properties of ZnInO alloy thin films

    NASA Astrophysics Data System (ADS)

    Cai, Xi-Kun; Yuan, Zi-Jian; Zhu, Xia-Ming; Wang, Xiong; Zhang, Bing-Po; Qiu, Dong-Jiang; Wu, Hui-Zhen

    2011-10-01

    Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In2O3 target powers are investigated. IZO thin films grown at different In2O3 target sputtering powers show evident morphological variation and different grain sizes. As the In2O3 sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In2O3 target power of 100 W displays the highest electrical mobility of 13.5 cm·V-1·s-1 and the lowest resistivity of 2.4 × 10-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In2O3 target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein—Moss shift theory.

  19. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  20. A thermochromic low-emittance coating: Calculations for nanocomposites of In2O3:Sn and VO2

    NASA Astrophysics Data System (ADS)

    Li, S.-Y.; Niklasson, G. A.; Granqvist, C. G.

    2011-09-01

    Calculations based on the Bruggeman effective medium theory were applied to thin films comprising a heavily doped wide band gap semiconductor (specifically In2O3:Sn (ITO)) and VO2. Films with ˜20 vol. % of VO2 can combine a 10% thermochromic modulation of the solar energy throughput with a luminous transmittance of 50%-60% and low thermal emittance. The maximum thermochromic modulation is ˜13% and occurs at ˜35 vol. % VO2. Coatings of ITO-VO2 are of interest for energy efficient fenestration.

  1. A uniform porous multilayer-junction thin film for enhanced gas-sensing performance.

    PubMed

    Zhang, Ping-Ping; Zhang, Hui; Sun, Xu-Hui

    2016-01-21

    Highly-uniform In2O3/CuO bilayer and multilayer porous thin films were successfully fabricated using a self-assembled soft template and a simple sputtering deposition technique. The sensor based on the In2O3/CuO bilayer porous thin film shows obviously improved sensing performance to ethanol at a lower working temperature, compared to its single layer counterpart sensors. The response of the In2O3/CuO bilayer sensors exhibit nearly 3 and 5 times higher performance than those of the single layer In2O3 and CuO porous film sensors over the same ethanol concentration, respectively. The sensing mechanism based on the p-n hetero-junction, which contributed to the enhanced sensing performance, was also experimentally confirmed by a control experiment in which an SiO2 insulation layer was inserted between the In2O3 and CuO layers to break the p-n junction. In addition, the sensing performance can be further enhanced by increasing the number of In2O3/CuO junction layers. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors for practical sensing applications. PMID:26673658

  2. Muonium Diffusion in In2O3

    NASA Astrophysics Data System (ADS)

    Baker, Brittany; Lichti, Roger; Celebi, Y. Gurkan; Mengyan, Patrick

    2015-03-01

    Indium oxide (In2O3) is a transparent conducting oxide (TCO) commonly found in mixtures used as windows and transparent electrodes in optical semiconductor devices (i.e. LEDs and solar cells). Hydrogen diffusion in the TCO layer and across the interface between the TCO and the semiconductor device plays an important role in the degradation of the transparency of TCO windows or electrodes. Theoretical calculations show positive H as the only stable, interstitial H charge state above the neutral H ionization temperature. Muon Spin Relaxation measurements were performed to investigate positive muon (Mu+) diffusion which are an experimentally accessible analog to H+. Three distinct Mu+ states are identified between 2 K and 1000 K; a static low temperature state, a dynamic state above room temperature, and a trapping state from 400 K to 800 K. The trap component creates complex dynamics and has been modeled assuming the Mu+ transfers between the dynamic state and the trapping state. Fits of the model to the data provide information about capture and release rates and energy barriers into and out of the trap state. Here we present and discuss results from these fits, possible site locations for each state and likely diffusion paths.

  3. A uniform porous multilayer-junction thin film for enhanced gas-sensing performance

    NASA Astrophysics Data System (ADS)

    Zhang, Ping-Ping; Zhang, Hui; Sun, Xu-Hui

    2016-01-01

    Highly-uniform In2O3/CuO bilayer and multilayer porous thin films were successfully fabricated using a self-assembled soft template and a simple sputtering deposition technique. The sensor based on the In2O3/CuO bilayer porous thin film shows obviously improved sensing performance to ethanol at a lower working temperature, compared to its single layer counterpart sensors. The response of the In2O3/CuO bilayer sensors exhibit nearly 3 and 5 times higher performance than those of the single layer In2O3 and CuO porous film sensors over the same ethanol concentration, respectively. The sensing mechanism based on the p-n hetero-junction, which contributed to the enhanced sensing performance, was also experimentally confirmed by a control experiment in which an SiO2 insulation layer was inserted between the In2O3 and CuO layers to break the p-n junction. In addition, the sensing performance can be further enhanced by increasing the number of In2O3/CuO junction layers. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors for practical sensing applications.Highly-uniform In2O3/CuO bilayer and multilayer porous thin films were successfully fabricated using a self-assembled soft template and a simple sputtering deposition technique. The sensor based on the In2O3/CuO bilayer porous thin film shows obviously improved sensing performance to ethanol at a lower working temperature, compared to its single layer counterpart sensors. The response of the In2O3/CuO bilayer sensors exhibit nearly 3 and 5 times higher performance than those of the single layer In2O3 and CuO porous film sensors over the same ethanol concentration, respectively. The sensing mechanism based on the p-n hetero-junction, which contributed to the enhanced sensing performance, was also experimentally confirmed by a control experiment in which an SiO2 insulation layer was inserted between the In2O3 and CuO layers to break the p-n junction. In addition, the sensing

  4. Thin film metrology.

    PubMed

    Nitsch, Gerald; Flinn, Gregory

    2007-10-01

    Thin film metrology is suitable for characterising and performing quality control of a variety of coatings and films used in medical applications. The capabilities of today's systems are described. PMID:18078184

  5. In2O3-based micro gas sensor for detecting NO x gases

    NASA Astrophysics Data System (ADS)

    Kim, Bum-Joon; Song, In-Gyu; Kim, Jung-Sik

    2014-03-01

    In this study, NO x micro gas sensors for monitoring the indoor atmosphere of automobile were fabricated using MEMS (microelectromechanical system) technology and a sol-gel process. The sensing electrode and micro heater were designed to have a co-planar typed structure in a Pt thin film layer. The thermal characteristics of a micro heater array were analyzed using a finite element method (FEM). The chip size of the gas sensor was approximately 2 mm × 2 mm. Indium oxide as a sensing material for NO x gas was synthesized by a sol-gel process with indium isopropoxide as a precursor. Field emission Scanning electron microscopy and x-ray diffraction showed that particle size of the synthesized In2O3 was approximately 17-45 nm. The maximum gas sensitivity as the relative resistance ( R s = R gas / R air ) was observed at 275°C with a value of 8.0 at 1 ppm NO2 gas. The response (80% saturation) and recovery times were within 1 min. The sensing properties of NO2 gas exhibited linear behavior with increasing gas concentration. The sensing mechanism of the gas sensor was explained by the variations in the electron depletion layers and the adsorption of gas molecules on the In2O3 particle surface. These results suggest that in the future, MEMS-based gas sensors can be used as automotive-exhaust-gas sensors.

  6. Study of band offsets at the Cu2SnS3/In2O3: Sn interface using x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Dias, Sandra; Krupanidhi, S. B.

    2015-06-01

    Cu2SnS3 thins films were deposited onto In2O3: Sn coated soda lime glass substrates by spin coating technique. The films have been structurally characterized using x-ray Diffraction (XRD) and Atomic Force Microscopy (AFM). The morphology of the films was studied using Field Emission Scanning Electron Microscopy (FESEM). The optical properties of the films were determined using UV-vis-NIR spectrophotometer. The electrical properties were measured using Hall effect measurements. The energy band offsets at the Cu2SnS3/In2O3: Sn interface were calculated using x-ray photoelectron spectroscopy (XPS). The valence band offset was found to be -3.4 ± 0.24 eV. From the valence band offset value, the conduction band offset is calculated to be -1.95 ± 0.34 eV. The energy band alignment indicates a type-II misaligned heterostructure formation.

  7. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  8. Surface photovoltage spectroscopy of thin films

    NASA Astrophysics Data System (ADS)

    Leibovitch, M.; Kronik, L.; Fefer, E.; Burstein, L.; Korobov, V.; Shapira, Yoram

    1996-06-01

    The surface photovoltage (SPV) spectrum due to subband-gap illumination of thin films is theoretically studied. It is shown that this SPV is inherently sensitive to buried interfaces just as it is sensitive to the external semiconductor surface. The different contributions to the SPV from all the optically active gap states present within a sample, consisting of a bulk substrate covered by a thin film, are analyzed. Analytical expressions are obtained in the low illumination intensity and the depletion approximation regime. The evolution of the SPV spectrum with film thickness is examined and is found to depend on both site and population of the gap states. Three modes of evolution are found, according to the relative importance of gap state population changes with film thickness. These modes are confirmed by a numerical simulation of a thin film of pseudomorphic InAlAs on InP substrates and by experiments conducted on the same system. The approach is also applied to the InP/In2O3 system, revealing gap state formation, followed by filling with electrons, thereby explaining previous observations of nearly ideal I-V behavior at this junction.

  9. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  10. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  11. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  12. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  13. High temperature nitrogen oxides sensing enabled by indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Kannan, Srinivasan

    Generation of power using fossil fuel combustion invariably results in formation of undesirable gas species (NOx, SOx, CO, CO2, etc.) at high-temperatures which are harmful to the environment. Thus, there is a continual need to develop sensitive, responsive, stable, selective, robust and low-cost sensor systems and sensor materials for combustion monitoring. This work investigates the viability of microfabricated NO x sensors based on sputtered indium oxide (In2O3) utilizing microhotplate structures. The material becomes resistive when exposed to oxidizing gases like NOx, with its conductivity dependent upon the temperature, partial pressure of the test gas and morphological structure. We believe this device would help increase efficiency and decrease emissions through improved combustion process control, leading to a comparably economic and responsive sensor. In this work, more than 600 sensors were fabricated and tested, including RF and pulsed-DC sputtered films. About 50 unique sensor conditions were characterized and related to the gas sensor response. The sensor conditions included deposition parameters (power, pressure, time, etc.) and postdeposition processes (anneals, promoter layers, etc.). In2O3 thin films were RF sputter deposited on microhotplate structures with different thickness (40 to 300 nm) in pure Ar. Additionally, a combination of reactive and RF sputtering of In2O3 material was-deposited in Ar and O2 (10% and 25%) mixture. In2O3 films without promoter layers and with gold or TiOx promoter layers (~ 3 nm) were investigated for NOx sensing. Selectivity, stability and repeatability of indium oxide (In2O3) thin film sensor to detect NOx (25 ppm) in presence of other exhaust gas pollutants including H2, NH3 and CO2 at high operating temperatures (greater than 350 °C) was investigated in N2 carrier gas. In2O 3 films (150nm thick) deposited in Ar and O2 (25% O 2) presented the highest response (S ~ 50) to 25 ppm NOx at 500 °C when compared to films

  14. Preparation of transparent and conductive multicomponent Zn-In-Sn oxide thin films by vacuum arc plasma evaporation

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Tsukada, Satoshi; Minamino, Youhei; Miyata, Toshihiro

    2005-07-01

    This article describes the preparation of transparent conducting oxide (TCO) thin films by a vacuum arc plasma evaporation (VAPE) method using multicomponent oxide materials composed of any combination of two of the following binary compounds: ZnO, In2O3, and SnO2. The resulting TCO thin films were prepared with high deposition rates with the desired chemical composition in the ZnO-In2O3, In2O3-SnO2, and SnO2-ZnO systems by altering the composition of the sintered oxide fragments used as the source materials. Minimum resistivities were obtained in amorphous In2O3-ZnO, SnO2-In2O3, and ZnO-SnO2 thin films that were prepared with a Zn content of about 8.5 at. %, an In content of about 46 at. %, and a Sn content of about 78 at. %, respectively. It was found that the electrical, optical and chemical properties in ZnO-SnO2 thin films prepared using the VAPE method could be controlled by altering the Sn content.

  15. Multifunctional thin film surface

    SciTech Connect

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  16. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  17. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.

    PubMed

    Yu, Xinge; Zhou, Nanjia; Smith, Jeremy; Lin, Hui; Stallings, Katie; Yu, Junsheng; Marks, Tobin J; Facchetti, Antonio

    2013-08-28

    We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 °C are ~5tmex larger (~2.6 cm(2)/(V s)) than those of single-layer IGO TFTs (~0.5 cm(2)/(V s)), reaching values comparable to single-layer combustion-processed In2O3 TFTs (~3.2 cm(2)/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ~0.0 V, and the current on/off ratio is significantly enhanced to ~1 × 10(8) (vs ~1 × 10(4) for In2O3). The microstructure and morphology of the In2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance. PMID:23876148

  18. Evaporated VOx Thin Films

    NASA Astrophysics Data System (ADS)

    Stapinski, Tomasz; Leja, E.

    1989-03-01

    VOx thin films on glass were obtained by thermal evaporation of V205, powder. The structural investigations were carried out with the use of X-ray diffractometer. The electrical properties of the film were examined by means of temperature measurements of resistivity for the samples heat-treated in various conditions. Optical transmission and reflection spectra of VOX films of various composition showed the influence of the heat treatment.

  19. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  20. Thin film photovoltaics

    SciTech Connect

    Zweibel, K; Ullal, H S

    1989-05-01

    Thin films are considered a potentially attractive technological approach to making cost-effective electricity by photovoltaics. Over the last twenty years, many have been investigated and some (cadmium telluride, copper indium diselenide, amorphous silicon) have become leading candidates for future large-scale commercialization. This paper surveys the past development of these key thin films and gives their status and future prospects. In all cases, significant progress toward cost-effective PV electricity has been made. If this progress continues, it appears that thin film PV could provide electricity that is competitive for summer daytime peaking power requirements by the middle of the 1990s; and electricity in a range that is competitive with fossil fuel costs (i.e., 6 cents/kilowatt-hour) should be available from PV around the turn of the century. 22 refs., 9 figs.

  1. Sensor properties of the nanostructured In2O3-CeO2 system in detection of reducing gases

    NASA Astrophysics Data System (ADS)

    Gerasimov, G. N.; Gromov, V. F.; Trakhtenberg, L. I.; Belysheva, T. V.; Spiridonova, E. Yu.; Rozenbaum, V. M.

    2014-03-01

    The sensor properties of nanostructured In2O3-CeO2 composite films with different compositions in hydrogen and carbon monoxide detection in air in the temperature range 280-500°C were studied. The temperature curves of the sensor effect S have a shape typical for metal oxide sensors with maxima S max at definite temperatures Tmax. The maxima characterize the sensor properties of the films and increased considerably when small amounts of CeO2 were added to In2O3. The highest sensitivity was found in composite films with 3-10 wt % CeO2. When the composite was further enriched with ceric oxide, the sensitivity decreased; at 40 wt % CeO2 it was considerably lower than that of pure In2O3. The introduction of CeO2 in In2O3 also caused a shift of Tmax toward lower temperatures. The mechanism of the sensitivity of the In2O3-CeO2 composite was considered; it includes the promotion of sensor reactions by small CeO2 nanoclusters lying on the surface of In2O3 crystals and an electron transfer from In2O3 to CeO2.

  2. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  3. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  4. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  5. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  6. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  7. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  8. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  9. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  10. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  11. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  12. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  13. Thin film scintillators

    NASA Astrophysics Data System (ADS)

    McDonald, Warren; McKinney, George; Tzolov, Marian

    2015-03-01

    Scintillating materials convert energy flux (particles or electromagnetic waves) into light with spectral characteristic matching a subsequent light detector. Commercial scintillators such as yttrium aluminum garnet (YAG) and yttrium aluminum perovskite (YAP) are commonly used. These are inefficient at lower energies due to the conductive coating present on their top surface, which is needed to avoid charging. We hypothesize that nano-structured thin film scintillators will outperform the commercial scintillators at low electron energies. We have developed alternative thin film scintillators, zinc tungstate and zinc oxide, which show promise for higher sensitivity to lower energy electrons since they are inherently conductive. Zinc tungstate films exhibit photoluminescence quantum efficiency of 74%. Cathodoluminescence spectroscopy was applied in transmission and reflection geometries. The comparison between the thin films and the YAG and YAP commercial scintillators shows much higher light output from the zinc tungstate and zinc oxide at electron energies less than 5 keV. Our films were integrated in a backscattered electron detector. This detector delivers better images than an identical detector with commercial YAG scintillator at low electron energies. Dr. Nicholas Barbi from PulseTor LLC, Dr. Anura Goonewardene, NSF Grants: #0806660, #1058829, #0923047.

  14. Resistive switching of Ag/In2O3/Pt heterostructures for non volatile memory applications

    NASA Astrophysics Data System (ADS)

    Mistry, Bhaumik V.; Joshi, U. S.; Pinto, R.

    2012-06-01

    Resistance switching properties of nanostructured In2O3 films grown on Pt bottom electrode have been investigated for non volatile memory applications. Ag/In2O3/Pt/Ti/SiO2/Si heterostructures were fabricated by pulsed laser deposition and e-beam evaporation techniques. Polycrystalline growth of oxides In2O3 was confirmed by grazing incidence X-ray diffraction, where as AFM show nanostructured growth with smooth surface morphology. Two terminal I-V characteristics showed reproducible hysteresis with a sharp resistive switching, suggesting two distinct resistance states in the film and bipolar type switching. Typical resistance switching ratio (Ron/Roff) of the order of 72% has been estimated at room temperature. The mechanism of the observed resistance switching is analyzed by space charge limited current (SCLS) and the Schottky-like barrier formation at Ag/In2O3 interface in the off states, where as, Pool-Frankel type conduction mechanism seems valid in the on state.

  15. Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

    PubMed

    Park, Jee Ho; Oh, Jin Young; Han, Sun Woong; Lee, Tae Il; Baik, Hong Koo

    2015-03-01

    A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (Jleak) of 4.38 × 10(-8) A/cm(2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (Ion/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices. PMID:25664940

  16. Thin-Film Deposition of Metal Oxides by Aerosol-Assisted Chemical Vapour Deposition: Evaluation of Film Crystallinity

    NASA Astrophysics Data System (ADS)

    Takeuchi, Masahiro; Maki, Kunisuke

    2007-12-01

    Sn-doped In2O3 (ITO) thin films are deposited on glass substrates using 0.2 M aqueous and methanol solutions of InCl3(4H2O) with 5 mol % SnCl2(2H2O) by aerosol-assisted chemical vapour deposition under positive and negative temperature gradient conditions. The film crystallinity is evaluated by determining the film thickness dependence of X-ray diffraction peak height. When using aqueous solution, the ITO films grow with the same crystallinity during the deposition, but when using methanol solution, the preferred orientation of ITO changes during the deposition.

  17. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  18. Thin film superconductor magnetic bearings

    SciTech Connect

    Weinberger, B.R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft that is subject to a load (L) and rotatable around an axis of rotation, a magnet mounted to the shaft, and a stator in proximity to the shaft. The stator has a superconductor thin film assembly positioned to interact with the magnet to produce a levitation force on the shaft that supports the load (L). The thin film assembly includes at least two superconductor thin films and at least one substrate. Each thin film is positioned on a substrate and all the thin films are positioned such that an applied magnetic field from the magnet passes through all the thin films. A similar bearing in which the thin film assembly is mounted on the shaft and the magnet is part of the stator also can be constructed. 8 figs.

  19. Chiral atomically thin films

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm–1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  20. Chiral atomically thin films.

    PubMed

    Kim, Cheol-Joo; Sánchez-Castillo, A; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm(-1)) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra. PMID:26900756

  1. Deposition of Nanostructured Indium Oxide Thin Films for Ethanol Sensing Applications

    NASA Astrophysics Data System (ADS)

    Abbasi, M.; Rozati, S. M.

    2016-06-01

    We present the preparation of a semiconductor gas sensor based on porous nanostructured In2O3 thin films. The In2O3 thin films have been deposited on preheated glass substrates by a spray pyrolysis technique at three substrate temperatures (i.e., 400°C, 450°C, and 500°C). The structural and morphological properties of the films were investigated by means of x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and fourier transform infrared spectroscopy. The substrate temperature during the film synthesis is found to be the most important factor and must be controlled with precision. It was observed that grain size of the films increased, and the surface roughness decreased with elevating substrate temperature. The sensitivity of the synthesized films was also measured across a range of operating temperature and ethanol concentration. Gas-sensing properties of ethanol shows that the cubic In2O3 nanostructures deposited at the lowest substrate temperature had the highest response.

  2. Advanced thin film thermocouples

    NASA Astrophysics Data System (ADS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-10-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  3. Biomimetic thin film deposition

    SciTech Connect

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  4. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  5. thin films as absorber

    NASA Astrophysics Data System (ADS)

    González, J. O.; Shaji, S.; Avellaneda, D.; Castillo, G. A.; Das Roy, T. K.; Krishnan, B.

    2014-09-01

    Photovoltaic structures were prepared using AgSb(S x Se1- x )2 as absorber and CdS as window layer at various conditions via a hybrid technique of chemical bath deposition and thermal evaporation followed by heat treatments. Silver antimony sulfo selenide thin films [AgSb(S x Se1- x )2] were prepared by heating multilayers of sequentially deposited Sb2S3/Ag dipped in Na2SeSO3 solution, glass/Sb2S3/Ag/Se. For this, Sb2S3 thin films were deposited from a chemical bath containing SbCl3 and Na2S2O3. Then, Ag thin films were thermally evaporated on glass/Sb2S3, followed by selenization by dipping in an acidic solution of Na2SeSO3. The duration of dipping was varied as 3, 4 and 5 h. Two different heat treatments, one at 350 °C for 20 min in vacuum followed by a post-heat treatment at 325 °C for 2 h in Ar, and the other at 350 °C for 1 h in Ar, were applied to the multilayers of different configurations. X-ray diffraction results showed the formation of AgSb(S x Se1- x )2 thin films as the primary phase and AgSb(S,Se)2 and Sb2S3 as secondary phases. Morphology and elemental detection were done by scanning electron microscopy and energy dispersive X-ray analysis. X-ray photoelectron spectroscopic studies showed the depthwise composition of the films. Optical properties were determined by UV-vis-IR transmittance and reflection spectral analysis. AgSb(S x Se1- x )2 formed at different conditions was incorporated in PV structures glass/FTO/CdS/AgSb(S x Se1- x )2/C/Ag. Chemically deposited post-annealed CdS thin films of various thicknesses were used as window layer. J- V characteristics of the cells were measured under dark and AM1.5 illumination. Analysis of the J- V characteristics resulted in the best solar cell parameters of V oc = 520 mV, J sc = 9.70 mA cm-2, FF = 0.50 and η = 2.7 %.

  6. Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, YongJin; Sadofev, Sergey; Fernández-Garrido, Sergio; Calarco, Raffaella; Riechert, Henning; Galazka, Zbigniew; Uecker, Reinhard; Brandt, Oliver

    2016-04-01

    We study the growth of InN films on In2O3(111) substrates by plasma-assisted molecular beam epitaxy under N excess. InN films deposited directly on In2O3(111) exhibit a strongly faceted morphology. A nitridation step prior to growth is found to convert the In2O3(111) surface to InN{0001}. The morphology of InN films deposited on such nitridated In2O3(111) substrates is characteristic for growth by instable step-flow and is thus drastically different from the three-dimensional growth obtained without nitridation. We show that this change originates from the different polarity of the films: while InN films deposited directly on In2O3(111) are In-polar, they are N-polar when grown on the nitridated substrate.

  7. Polycrystalline thin film photovoltaics

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Ullal, H. S.; Mitchell, R. L.

    Significant progress has recently been made towards improving the efficiencies of polycrystalline thin-film solar cells and modules using CuInSe2 and CdTe. The history of using CuInSe2 and CdTe for solar cells is reviewed. Initial outdoor stability tests of modules are encouraging. Progress in semiconductor deposition techniques has also been substantial. Both CuInSe2 and CdTe are positioned for commercialization during the 1990s. The major participants in developing these materials are described. The US DOE/SERI (Solar Energy Research Institute) program recognizes the rapid progress and important potential of polycrystalline thin films to meet ambitious cost and performance goals. US DOE/SERI is in the process of funding an initiative in this area with the goal of ensuring US leadership in the development of these technologies. The polycrystalline thin-film module development initiative, the modeling and stability of the devices, and health and safety issues are discussed.

  8. Thin film mechanics

    NASA Astrophysics Data System (ADS)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  9. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  10. Center for thin film studies

    NASA Astrophysics Data System (ADS)

    Shannon, Robert P.; Gibson, Ursula J.

    1987-11-01

    This report covers the first year of operation of the URI Thin Film Center (TFC), and describes a diverse array of studies on thin-film materials, substrates, and their processing and analysis. Individual efforts are highlighted in sections on nucleation studies, ion-assisted deposition, Rutherford backscattering spectrometry, Brillouin scattering, a continuum theory of the evolution of structure in thin films, a study of polishing parameters relevant to the preparation of substrates, and the setup of a characterization facility for the Center.

  11. Polycrystalline thin-films

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Mitchell, R.

    1986-02-01

    This annual report summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Major subcontracted work in this area has concentrated on development of CuInSe2 and CdTe technologies. During FY 1985, major progress was achieved by subcontractors in: (1) developing a new, low-cost method of fabricating CuInSe2, and (2) improving the efficiency of CuInSe2 devices by about 10% (relative). The report also lists research planned to meet the Department of Energy's goals in these technologies.

  12. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  13. A phosphor-free white light-emitting diode using In2O3 : Tb transparent conductive light converter

    NASA Astrophysics Data System (ADS)

    Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian

    2011-04-01

    Tb-doped indium oxide (In2O3 : Tb) films were deposited on a GaN-based near-ultraviolet (NUV) light-emitting diode (LED) as a transparent conductive light converter to form a white LED. The transmittance of the In2O3 : Tb film (Tb at 10 wt%) exceeded 80% in visible light and the resistivity was 0.325 Ω cm. The In2O3 : Tb transparent conductive light converter was also employed on GaN-based LEDs. GaN-based NUV-LEDs with In2O3 : Tb film (Tb at 10 wt%) produced forward biases of 3.42 V at an injection current of 20 mA. With increasing temperature, increasing Tb3+ concentration and increasing injection current from 20 to 100 mA, the chromaticity coordinates barely changed in the white light area. Therefore, the GaN-based NUV-LED with In2O3 : Tb film had a stable white light colour, when temperature and injection current changed, and is suitable for solid-state lighting.

  14. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  15. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  16. Electrical compensation by Ga vacancies in Ga2O3 thin films

    NASA Astrophysics Data System (ADS)

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-01

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as Oi.

  17. Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition.

    PubMed

    Macco, Bart; Knoops, Harm C M; Kessels, Wilhelmus M M

    2015-08-01

    Hydrogen-doped indium oxide (In2O3:H) has recently emerged as an enabling transparent conductive oxide for solar cells, in particular for silicon heterojunction solar cells because its high electron mobility (>100 cm(2)/(V s)) allows for a simultaneously high electrical conductivity and optical transparency. Here, we report on high-quality In2O3:H prepared by a low-temperature atomic layer deposition (ALD) process and present insights into the doping mechanism and the electron scattering processes that limit the carrier mobility in such films. The process consists of ALD of amorphous In2O3:H at 100 °C and subsequent solid-phase crystallization at 150-200 °C to obtain large-grained polycrystalline In2O3:H films. The changes in optoelectronic properties upon crystallization have been monitored both electrically by Hall measurements and optically by analysis of the Drude response. After crystallization, an excellent carrier mobility of 128 ± 4 cm(2)/(V s) can be obtained at a carrier density of 1.8 × 10(20) cm(-3), irrespective of the annealing temperature. Temperature-dependent Hall measurements have revealed that electron scattering is dominated by unavoidable phonon and ionized impurity scattering from singly charged H-donors. Extrinsic defect scattering related to material quality such as grain boundary and neutral impurity scattering was found to be negligible in crystallized films indicating that the carrier mobility is maximized. Furthermore, by comparison of the absolute H-concentration and the carrier density in crystallized films, it is deduced that <4% of the incorporated H is an active dopant in crystallized films. Therefore, it can be concluded that inactive H atoms do not (significantly) contribute to defect scattering, which potentially explains why In2O3:H films are capable of achieving a much higher carrier mobility than conventional In2O3:Sn (ITO). PMID:26168056

  18. Thin film atomic hydrogen detectors

    NASA Technical Reports Server (NTRS)

    Gruber, C. L.

    1977-01-01

    Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

  19. Polysilicon thin films and interfaces

    SciTech Connect

    Kamins, T. ); Raicu, B. ); Thompson, C.V. )

    1990-01-01

    This volume contains the proceedings of a symposium on polysilicon thin films and interfaces, held as part of the 1990 Materials Research Society Spring Meeting. Topics covered include: crystal grown fo silicon and germanium wafers for photovoltaic devices, microanalysis of tungsten silicide interface, thermal processing of polysilicon thin films, and electrical and optical properties of polysilicon sheets for photovoltaic devices.

  20. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  1. Polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Mitchell, R.; Ullal, H.

    1987-02-01

    This annual report for fiscal year 1986 summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Subcontracted work in this area has concentrated on the development of CuInSe2 and CdTe technologies. During FY 1986, major progress was achieved by subcontractors in (1) achieving 10.5% (SERI-verified) efficiency with CdTe, (2) improving the efficiency of selenized CuInSe2 solar cells to nearly 8%, and (3) developing a transparent contact to CdTe cells for potential use in the top cells of tandem structures.

  2. Polyimide Aerogel Thin Films

    NASA Technical Reports Server (NTRS)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  3. Ferromagnetic thin films

    DOEpatents

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  4. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  5. Ultraviolet detecting properties of amorphous MgInO thin film phototransistors

    NASA Astrophysics Data System (ADS)

    Lu, Huiling; Bi, Xiaobin; Zhang, Shengdong; Zhou, Hang

    2015-12-01

    The ultraviolet (UV) detecting properties of Mg doped In2O3 (MgInO or MIO) bottom gate thin film transistors (TFTs) were investigated. The optical measurements show that the introduction of Mg dopants effectively widens the optical band gap of In2O3. The cutoff wavelength of MIO films is pushed to deep UV as Mg content increases. Fabricated MIO TFTs with high Mg content demonstrate appraisable UV detecting properties with a dark current of 10-14 A, a UV to visible rejection ratio of 103, a responsivity of 3.2 A/W (300 nm) and a cutoff wavelength of 320 nm, which can be put to good use in deep UV detection. The dynamic photo-response measurement shows that the persistent photo-conductivity (PPC) effect can be alleviated by imposing a transient positive gate pulse.

  6. Solution-Processed Indium Oxide Based Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Xu, Wangying

    Oxide thin-film transistors (TFTs) have attracted considerable attention over the past decade due to their high carrier mobility and excellent uniformity. However, most of these oxide TFTs are usually fabricated using costly vacuum-based techniques. Recently, the solution processes have been developed due to the possibility of low-cost and large-area fabrication. In this thesis, we have carried out a detailed and systematic study of solution-processed oxide thin films and TFTs. At first, we demonstrated a passivation method to overcome the water susceptibility of solution-processed InZnO TFTs by utilizing octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs). The unpassivated InZnO TFTs exhibited large hysteresis in their electrical characteristics due to the adsorbed water at the semiconductor surface. Formation of a SAM of ODPA on the top of InZnO removed water molecules weakly absorbed at the back channel and prevented water diffusion from the surroundings. Therefore the passivated devices exhibited significantly reduced hysteretic characteristics. Secondly, we developed a simple spin-coating approach for high- k dielectrics (Al2O3, ZrO2, Y 2O3 and TiO2). These materials were used as gate dielectrics for solution-processed In2O3 or InZnO TFTs. Among the high-k dielectrics, the Al2O3-based devices showed the best performance, which is attributed to the smooth dielectric/semiconductor interface and the low interface trap density besides its good insulating property. Thirdly, the formation and properties of Al2O3 thin films under various annealing temperatures were intensively studied, revealing that the sol-gel-derived Al2O3 thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide. Besides, the Al2O 3 film was used as gate dielectric for solution-processed oxide TFTs, resulting in high mobility and low operating voltage. Finally, we proposed a green route for

  7. Thin-film microextraction.

    PubMed

    Bruheim, Inge; Liu, Xiaochuan; Pawliszyn, Janusz

    2003-02-15

    The properties of a thin sheet of poly(dimethylsiloxane) (PDMS) membrane as an extraction phase were examined and compared to solid-phase microextraction (SPME) PDMS-coated fiber for application to semivolatile analytes in direct and headspace modes. This new PDMS extraction approach showed much higher extraction rates because of the larger surface area to extraction-phase volume ratio of the thin film. Unlike the coated rod formats of SPME using thick coatings, the high extraction rate of the membrane SPME technique allows larger amounts of analytes to be extracted within a short period of time. Therefore, higher extraction efficiency and sensitivity can be achieved without sacrificing analysis time. In direct membrane SPME extraction, a linear relationship was found between the initial rate of extraction and the surface area of the extraction phase. However, for headspace extraction, the rates were somewhat lower because of the resistance to analyte transport at the sample matrix/headspace barrier. It was found that the effect of this barrier could be reduced by increasing either agitation, temperature, or surface area of the sample matrix/headspace interface. A method for the determination of PAHs in spiked lake water samples was developed based on the membrane PDMS extraction coupled with GC/MS. A linearity of 0.9960 and detection limits in the low-ppt level were found. The reproducibility was found to vary from 2.8% to 10.7%. PMID:12622398

  8. Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor.

    PubMed

    Nguyen, Manh-Cuong; Jang, Mi; Lee, Dong-Hwi; Bang, Hyun-Jun; Lee, Minjung; Jeong, Jae Kyeong; Yang, Hoichang; Choi, Rino

    2016-01-01

    Lithium (Li)-assisted indium oxide (In2O3) thin films with ordered structures were prepared on solution-processed zirconium oxide (ZrO2) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different Li nitrate loadings. It was found that the Li-assisted In precursor films on ZrO2 dielectrics could form crystalline structures even at processing temperatures (T) below 200 °C. Different In oxidation states were observed in the Li-doped films, and the development of such states was significantly affected by both temperature and the mol% of Li cations, [Li(+)]/([In(3+)] + [Li(+)]), in the precursor solutions. Upon annealing the Li-assisted precursor films below 200 °C, metastable indium hydroxide and/or indium oxyhydroxide phases were formed. These phases were subsequently transformed into crystalline In2O3 nanostructures after thermal dehydration and oxidation. Finally, an In2O3 film doped with 13.5 mol% Li(+) and annealed at 250 °C for 1 h exhibited the highest electron mobility of 60 cm(2) V(-1) s(-1) and an on/off current ratio above 10(8) when utilized in a thin film transistor. PMID:27121951

  9. Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor

    PubMed Central

    Nguyen, Manh-Cuong; Jang, Mi; Lee, Dong-Hwi; Bang, Hyun-Jun; Lee, Minjung; Jeong, Jae Kyeong; Yang, Hoichang; Choi, Rino

    2016-01-01

    Lithium (Li)-assisted indium oxide (In2O3) thin films with ordered structures were prepared on solution-processed zirconium oxide (ZrO2) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different Li nitrate loadings. It was found that the Li-assisted In precursor films on ZrO2 dielectrics could form crystalline structures even at processing temperatures (T) below 200 °C. Different In oxidation states were observed in the Li-doped films, and the development of such states was significantly affected by both temperature and the mol% of Li cations, [Li+]/([In3+] + [Li+]), in the precursor solutions. Upon annealing the Li-assisted precursor films below 200 °C, metastable indium hydroxide and/or indium oxyhydroxide phases were formed. These phases were subsequently transformed into crystalline In2O3 nanostructures after thermal dehydration and oxidation. Finally, an In2O3 film doped with 13.5 mol% Li+ and annealed at 250 °C for 1 h exhibited the highest electron mobility of 60 cm2 V−1 s−1 and an on/off current ratio above 108 when utilized in a thin film transistor. PMID:27121951

  10. Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor

    NASA Astrophysics Data System (ADS)

    Nguyen, Manh-Cuong; Jang, Mi; Lee, Dong-Hwi; Bang, Hyun-Jun; Lee, Minjung; Jeong, Jae Kyeong; Yang, Hoichang; Choi, Rino

    2016-04-01

    Lithium (Li)-assisted indium oxide (In2O3) thin films with ordered structures were prepared on solution-processed zirconium oxide (ZrO2) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different Li nitrate loadings. It was found that the Li-assisted In precursor films on ZrO2 dielectrics could form crystalline structures even at processing temperatures (T) below 200 °C. Different In oxidation states were observed in the Li-doped films, and the development of such states was significantly affected by both temperature and the mol% of Li cations, [Li+]/([In3+] + [Li+]), in the precursor solutions. Upon annealing the Li-assisted precursor films below 200 °C, metastable indium hydroxide and/or indium oxyhydroxide phases were formed. These phases were subsequently transformed into crystalline In2O3 nanostructures after thermal dehydration and oxidation. Finally, an In2O3 film doped with 13.5 mol% Li+ and annealed at 250 °C for 1 h exhibited the highest electron mobility of 60 cm2 V‑1 s‑1 and an on/off current ratio above 108 when utilized in a thin film transistor.

  11. Transparent Thin Film Transistors based on Pristine and Doped Indium Oxide Nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Po-Chiang; Shen, Guozhen; Sukcharoenchoke, Saowalak; Zhou, Chongwu

    2009-03-01

    The key to the realization of transparent electronics is the development of transparent thin film transistors (TTFT) with good device performance, in terms of high device mobility, low temperature fabrication, and optical transparency. We present our work on the fabrication of high performance TTFTs using both pristine In2O3 nanowires and doped In2O3 nanowires. In2O3 nanowire TTFTs were made on glass and PET substrates with Al2O3 as gate insulator and ITO source/drain electrodes. These devices showed a transparency of about 80% and n-type transistor performance. The device characteristics exhibit a subthreshold slope of 0.2 V/dec, a current on/off ratio of 10^6, and a field-effect mobility of 514 cm^2V-1S-1. We also fabricated TTFTs wbuilt on Arsenic-doped In2O3 nanowires with a field-effect mobility of 1,183.8 cm^2V-1S-1 without any post-treatments. In addition, we integrated TTFTs with organic light emitting diode (OLED) to make an active matrix organic light emitting diode (AMOLED) display, and thus made an animation by controlling the OLED light output.

  12. Organic solar cells with carbon nanotubes replacing In2O3:Sn as the transparent electrode

    NASA Astrophysics Data System (ADS)

    van de Lagemaat, Jao; Barnes, Teresa M.; Rumbles, Garry; Shaheen, Sean E.; Coutts, Timothy J.; Weeks, Chris; Levitsky, Igor; Peltola, Jorma; Glatkowski, Paul

    2006-06-01

    We report two viable organic excitonic solar cell structures where the conventional In2O3:Sn (ITO) hole-collecting electrode was replaced by a thin single-walled carbon nanotube layer. The first structure includes poly(3,4-ethylenedioxythiophene) (PEDOT) and gave a nonoptimized device efficiency of 1.5%. The second did not use PEDOT as a hole selective contact and had an efficiency of 0.47%. The strong rectifying behavior of the device shows that nanotubes are selective for holes and are not efficient recombination sites. The reported excitonic solar cell, produced without ITO and PEDOT, is an important step towards a fully printable solar cell.

  13. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  14. Effect of pH on particles size and gas sensing properties of In2O3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Anand, Kanica; Thangaraj, Rengasamy; Singh, Ravi Chand

    2016-05-01

    In this work, indium oxide (In2O3) nanoparticles have been synthesized by co-precipitation method and the effect of pH on the structural and sensor response values of In2O3 nanoparticles has been reported. X-ray diffraction pattern (XRD) revealed the formation of cubic phase In2O3 nanoparticles. FESEM results indicate the formation of nearly spherical shape In2O3 nanoparticles. The band gap energy value changed with change in pH value and found to have highest value at pH 9. Indium oxide nanoparticles thus prepared were deposited as thick films on alumina substrates to act as gas sensors and their sensing response to ethanol vapors and LPG at 50 ppm was investigated at different operating temperatures. It has been observed that all sensors exhibited optimum response at 300°C towards ethanol and at 400°C towards LPG. In2O3 nanoparticles prepared at pH 9, being smallest in size as compared to other, exhibit highest sensor response (SR).

  15. Thin film cell development workshop report

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1991-01-01

    The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

  16. Transparent Flexible Zinc-Indium-Tin Oxide Thin-Film Transistors Fabricated on Polyarylate Films

    NASA Astrophysics Data System (ADS)

    Cheong, Woo-Seok; Bak, Jun-Yong; Kim, Hong Seung

    2010-05-01

    Transparent flexible displays can be realized using active matrix organic light emitting device (AMOLED) with transparent electrodes on transparent plastic substrates. In this study, we developed low-temperature, high-performance [ZITO, ZnO:In2O3:SnO2=3:1:1 molar ratio] thin-film transistors (TFTs) on polyarylate films. After optimizing the sputtering condition, the ZITO TFT with an ITO electrode had a high mobility of 16.93 cm2 V-1 s-1, and an SS of 0.39, while the ZITO TFT with a ZTO:B electrode showed no hysteresis on sweeping, a mobility of 2.29 cm2 V-1 s-1 and an SS of 0.18.

  17. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  18. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  19. Calorimetry of epitaxial thin films.

    PubMed

    Cooke, David W; Hellman, F; Groves, J R; Clemens, B M; Moyerman, S; Fullerton, E E

    2011-02-01

    Thin film growth allows for the manipulation of material on the nanoscale, making possible the creation of metastable phases not seen in the bulk. Heat capacity provides a direct way of measuring thermodynamic properties of these new materials, but traditional bulk calorimetric techniques are inappropriate for such a small amount of material. Microcalorimetry and nanocalorimetry techniques exist for the measurements of thin films but rely on an amorphous membrane platform, limiting the types of films which can be measured. In the current work, ion-beam-assisted deposition is used to provide a biaxially oriented MgO template on a suspended membrane microcalorimeter in order to measure the specific heat of epitaxial thin films. Synchrotron x-ray diffraction showed the biaxial order of the MgO template. X-ray diffraction was also used to prove the high quality of epitaxy of a film grown onto this MgO template. The contribution of the MgO layer to the total heat capacity was measured to be just 6.5% of the total addenda contribution. The heat capacity of a Fe(.49)Rh(.51) film grown epitaxially onto the device was measured, comparing favorably to literature data on bulk crystals. This shows the viability of the MgO∕SiN(x)-membrane-based microcalorimeter as a way of measuring the thermodynamic properties of epitaxial thin films. PMID:21361612

  20. Highly sensitive alcohol sensor based on a single Er-doped In2O3 nanoribbon

    NASA Astrophysics Data System (ADS)

    Qin, Zhaojun; Liu, Yingkai; Chen, Weiwu; Ai, Peng; Wu, Yuemei; Li, Shuanghui; Yu, Dapeng

    2016-02-01

    Pure In2O3 NBs and Er-In2O3 NBs have been successfully synthesized by carbon thermal reduction. The doping of Er leads the optimal temperature of the In2O3 to decrease. The response of the Er-In2O3 sensor to 100 ppm of alcohol is 4.8 at 220 °C, which is twice larger than that of the pure In2O3 sensor. It is also found that the doping of Er has increased the performance of the sensors. Moreover, Er-In2O3 sensor has a fast response (recovery) time to different concentration of alcohol at 220 °C. In addition, the mechanism of pure In2O3 sensor and Er-In2O3 sensor are discussed.

  1. The Thin Oil Film Equation

    NASA Technical Reports Server (NTRS)

    Brown, James L.; Naughton, Jonathan W.

    1999-01-01

    A thin film of oil on a surface responds primarily to the wall shear stress generated on that surface by a three-dimensional flow. The oil film is also subject to wall pressure gradients, surface tension effects and gravity. The partial differential equation governing the oil film flow is shown to be related to Burgers' equation. Analytical and numerical methods for solving the thin oil film equation are presented. A direct numerical solver is developed where the wall shear stress variation on the surface is known and which solves for the oil film thickness spatial and time variation on the surface. An inverse numerical solver is also developed where the oil film thickness spatial variation over the surface at two discrete times is known and which solves for the wall shear stress variation over the test surface. A One-Time-Level inverse solver is also demonstrated. The inverse numerical solver provides a mathematically rigorous basis for an improved form of a wall shear stress instrument suitable for application to complex three-dimensional flows. To demonstrate the complexity of flows for which these oil film methods are now suitable, extensive examination is accomplished for these analytical and numerical methods as applied to a thin oil film in the vicinity of a three-dimensional saddle of separation.

  2. Thin-film metal hydrides.

    PubMed

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis. PMID:18980236

  3. Effects of nitrogen flow rate on the properties of indium oxide thin films.

    PubMed

    Cho, Shinho; Kim, Moonhwan

    2013-11-01

    Indium oxide thin films are deposited on glass substrates at nitrogen flow rates of 0-50% by rf reactive magnetron sputtering and are characterized for their structural, morphological, electrical, and optical properties. The experimental results showed that the control of nitrogen flow rate has a significant effect on the properties of the In2O3 thin films. The change in the preferred growth orientation from (222) to (400) planes is observed above a nitrogen flow rate of 10%. The average optical transmittance in the wavelength range of 400-1100 nm is increased from 85.4% at 0% to 86.7% at 50%, where the smallest value of the optical band gap energy is obtained. In addition to the improvement in crystallinity of the films, the nitrogen flow rate plays a crucial role in the fabrication of high-quality indium oxide films and devices. PMID:24245335

  4. Thin film of biocompatible polysaccharides

    NASA Astrophysics Data System (ADS)

    Richert, Ludovic; Lavalle, Philippe; Schaaf, Pierre; Voegel, Jean-Claude; Picart, Catherine

    2003-03-01

    The layer-by-layer deposition method proposed by Decher et al. (1991) is a very simple and versatile method used to build thin films. These films are of interest for bioengineering because of their unique properties and of the possible insertion of bioactive molecules. We present here the peculiar properties of a new kind of film formed with natural biopolymers, namely hyaluronan (HA)and chitosan (CHI). The films may be used as biomimetic substrates to control bacterial and cell adhesion. These polysaccharides are of particular interest because they are biodegradable, non toxic, and can be found in various tissues. Hyaluronan is also a natural ligand for a numerous type of cells through the CD44 receptor. Chitosan has already largely been used for its biological and anti-microbial properties. (CHI/HA) films were built in acidic pH at different ionic strength. The buildup was followed in situ by optical waveguide lightmode spectroscopy (OWLS), quartz crystal microbalance, streaming potential measurements and atomic force microscopy. The kinetics of adsorption and desorption of the polyelectrolytes depended on the ionic strength. Small islands were initially present on the surface which grew by mutual coalescence until becoming a flat film. The films were around 200 nm in thickness. These results suggest that different types of thin films constituted of polysaccharides can be built on any type of surface. These films are currently investigated toward their cell adhesion and bacterial adhesion properties.

  5. (Thin films under chemical stress)

    SciTech Connect

    Not Available

    1990-01-01

    As stated above the purpose of this research is to enable workers in a variety of fields to understand the chemical and physical changes which take place when thin films (primarily organic films) are placed under chemical stress. This stress may occur because the film is being swelled by penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). These questions are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers, which might have unique functional properties. In the past year we have concentrated on the following objectives: (1) understanding how the two possible diffusion mechanisms contribute to the swelling of thin films of organic polymers place in solution, (2) identifying systems which are appropriate polymer media for the construction of composite membranes for use in aqueous environments, and (3) understanding the self-assembly process for long chain fatty acids at model surfaces. Progress in meeting each of these objectives will be described in this report. 4 figs.

  6. Thin-film forces in pseudoemulsion films

    SciTech Connect

    Bergeron, V.; Radke, C.J. |

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  7. Morphology-controlled In2O3 nanostructures enhance the performance of photoelectrochemical water oxidation.

    PubMed

    Chen, Changlong; Moir, Jonathon; Soheilnia, Navid; Mahler, Benoit; Hoch, Laura; Liao, Kristine; Hoepfner, Veronika; O'Brien, Paul; Qian, Chenxi; He, Le; Ozin, Geoffrey A

    2015-02-28

    Nanotower- and nanowall-like indium oxide structures were grown directly on fluorine-doped tin oxide (FTO)/In2O3 seeded substrates and pristine FTO substrates, respectively, by a straightforward solvothermal method. The tower-like nanostructures are proposed to form via a self-assembly process on the In2O3 seeds. The wall-like nanostructures are proposed to form via epitaxial growth from the exposed edges of SnO2 crystals of the FTO substrate. The nanotowers and nanowalls are composed of highly crystalline and ordered nanocrystals with preferred orientations in the [111] and [110] directions, respectively. The two structures display remarkably different activities when used as photoanodes in solar light-driven water splitting. X-ray photoelectron spectroscopy results suggest an increased density of hydroxyl groups in the nanowalls, which results in a decrease of the work function and a concomitant shift in the onset potential of the photocurrent in the linear sweep voltammograms, which is further confirmed by Mott-Schottky and flat-band potential measurements, indicating the importance of hydroxyl content in determining the photoelectrochemical properties of the films. Morphology-controlled, nanostructured transparent conducting oxide electrodes of the kind described in this paper are envisioned to provide valuable platforms for supporting catalysts and co-catalysts that are intentionally tailored for efficient light-assisted oxidation of water and reduction of carbon dioxide. PMID:25641562

  8. Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis.

    PubMed

    Faber, Hendrik; Lin, Yen-Hung; Thomas, Stuart R; Zhao, Kui; Pliatsikas, Nikos; McLachlan, Martyn A; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

    2015-01-14

    The use of ultrasonic spray pyrolysis is demonstrated for the growth of polycrystalline, highly uniform indium oxide films at temperatures in the range of 200-300 °C in air using an aqueous In(NO3)3 precursor solution. Electrical characterization of as-deposited films by field-effect measurements reveals a strong dependence of the electron mobility on deposition temperature. Transistors fabricated at ∼250 °C exhibit optimum performance with maximum electron mobility values in the range of 15-20 cm(2) V (-1) s(-1) and current on/off ratio in excess of 10(6). Structural and compositional analysis of as-grown films by means of X-ray diffraction, diffuse scattering, and X-ray photoelectron spectroscopy reveal that layers deposited at 250 °C are denser and contain a reduced amount of hydroxyl groups as compared to films grown at either lower or higher temperatures. Microstructural analysis of semiconducting films deposited at 250 °C by high resolution cross-sectional transmission electron microscopy reveals that as-grown layers are extremely thin (∼7 nm) and composed of laterally large (30-60 nm) highly crystalline In2O3 domains. These unique characteristics of the In2O3 films are believed to be responsible for the high electron mobilities obtained from transistors fabricated at 250 °C. Our work demonstrates the ability to grow high quality low-dimensional In2O3 films and devices via ultrasonic spray pyrolysis over large area substrates while at the same time it provides guidelines for further material and device improvements. PMID:25490965

  9. Thin films under chemical stress

    SciTech Connect

    Not Available

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  10. Beryllium thin films for resistor applications

    NASA Technical Reports Server (NTRS)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  11. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  12. Thin film-coated polymer webs

    DOEpatents

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  13. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  14. Low work function, stable thin films

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  15. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  16. Thin Film Solid Lubricant Development

    NASA Technical Reports Server (NTRS)

    Benoy, Patricia A.

    1997-01-01

    Tribological coatings for high temperature sliding applications are addressed. A sputter-deposited bilayer coating of gold and chromium is investigated as a potential solid lubricant for protection of alumina substrates during sliding at high temperature. Evaluation of the tribological properties of alumina pins sliding against thin sputtered gold films on alumina substrates is presented.

  17. Hybrid thin-film amplifier

    NASA Technical Reports Server (NTRS)

    Cleveland, G.

    1977-01-01

    Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.

  18. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, Dora K.; Arnold, Jr., Charles; Delnick, Frank M.

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  19. Thin films and uses

    DOEpatents

    Baskaran, Suresh; Graff, Gordon L.; Song, Lin

    1998-01-01

    The invention provides a method for synthesizing a titanium oxide-containing film comprising the following steps: (a) preparing an aqueous solution of a titanium chelate with a titanium molarity in the range of 0.01M to 0.6M. (b) immersing a substrate in the prepared solution, (c) decomposing the titanium chelate to deposit a film on the substrate. The titanium chelate maybe decomposed acid, base, temperature or other means. A preferred method provides for the deposit of adherent titanium oxide films from C2 to C5 hydroxy carboxylic acids. In another aspect the invention is a novel article of manufacture having a titanium coating which protects the substrate against ultraviolet damage. In another aspect the invention provides novel semipermeable gas separation membranes, and a method for producing them.

  20. Polyimide thin-film dielectrics on ferroelectrics

    NASA Technical Reports Server (NTRS)

    Galiardi, R. V.

    1977-01-01

    Conducting layers of multi-layered thin-film ferroelectric device, such as is used in liquid crystal/ferroelectric display, can be electrically isolated using thin-film layer of polyimide. Ease of application and high electrical-breakdown strength allow dependable and economical means of providing dielectric for other thin-film microelectronic devices.

  1. Electrical and optical characterization of multilayered thin film based on pulsed laser deposition of metal oxides

    NASA Astrophysics Data System (ADS)

    Marotta, V.; Orlando, S.; Parisi, G. P.; Giardini, A.; Perna, G.; Santoro, A. M.; Capozzi, V.

    2000-12-01

    Thin films of semiconducting oxides such as In2O3, SnO2, and multilayers of these two compounds have been deposited by reactive pulsed laser ablation, with the aim to produce toxic gas sensors. Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser (λ=532 nm) on silicon (1 0 0) substrates. A comparison, among indium oxide, tin oxide, and multilayers of indium and tin oxides, has been performed. The influence of physical parameters such as substrate temperature, laser fluence and oxygen pressure in the deposition chamber has been investigated. The deposited films have been characterized by X-ray diffraction (XRD), optical and electric resistance measurements.

  2. Phase Coarsening in Thin Films

    NASA Astrophysics Data System (ADS)

    Wang, K. G.; Glicksman, M. E.

    2015-08-01

    Phase coarsening (Ostwald ripening) phenomena are ubiquitous in materials growth processes such as thin film formation. The classical theory explaining late-stage phase coarsening phenomena was developed by Lifshitz and Slyozov, and by Wagner in the 1960s. Their theory is valid only for a vanishing volume fraction of the second phase in three dimensions. However, phase coarsening in two-dimensional systems is qualitatively different from that in three dimensions. In this paper, the many-body concept of screening length is reviewed, from which we derive the growth law for a `screened' phase island, and develop diffusion screening theory for phase coarsening in thin films. The coarsening rate constant, maximum size of phase islands in films, and their size distribution function will be derived from diffusion screening theory. A critical comparison will be provided of prior coarsening concepts and improvements derived from screening approaches.

  3. Growth and surface characterization of tin-doped indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Morales, Erie

    The geometrical and electronic surface properties of In2O 3 and Sn-doped In2O3 (ITO) have been investigated. Sn-doped In2O3 is widely used as a transparent conducting oxide in flat panel displays, organic-light-emitting-diodes, solar cells, and electrochromic windows. Despite the fact that surface and interfaces are important in all these applications, a fundamental understanding of the surface properties of this material is lacking. Meaningful surface investigations are best conducted on single-crystalline samples, thus epitaxial thin films of In2O3 and ITO were grown and used as samples for the surface investigations. This work focuses on two low-index surfaces of ITO, the non-polar (111) orientation and the (100) orientation, which, in its bulk-terminated form, is polar. The epitaxial films were grown with oxygen-plasma assisted molecular beam epitaxy (MBE) on yttria-stabilized zirconia, which exhibits a cube-on-cube epitaxy as well as a small lattice mismatch with respect to In2O 3. The YSZ(111) substrate was characterized with Re ection-high-electron-energy-diffraction (RHEED) and Low-energy-electron-diffraction (LEED) and its surface was found to be (1x1) terminated. RHEED and LEED measurements on the substrate were possible if the substrate was kept at 300°C in order to avoid charging effects of this insulating material. RHEED exhibited 2-dimensional growth mode for the Sn-doped In2O3 thin films. Using LEED it was found that the surface of In2O3 and Sn-doped In 2O3 poses a (1x1) terminated surface. A de-convolution of X-ray core level photoemission (XPS) of In 3d peaks; into one component that is due to regular photoemission and one that is due to interaction of core holes with electronic plasmons, provided the plasmon energy, E p; From Ep the electron density n of the doped films was obtained. For an ITO film with 6.2 at% of Sn, it was found that 1/3 of the Sn atoms contribute one electron to the conduction band. Scanning-tunneling-microscopy (STM) was

  4. Au-modified three-dimensional In2O3 inverse opals: synthesis and improved performance for acetone sensing toward diagnosis of diabetes

    NASA Astrophysics Data System (ADS)

    Xing, Ruiqing; Li, Qingling; Xia, Lei; Song, Jian; Xu, Lin; Zhang, Jiahuan; Xie, Yi; Song, Hongwei

    2015-07-01

    Analyzing the volatile organic compounds (VOCs) in exhaled breath effectively is crucial to medical treatment, which can provide a fast and noninvasive way to diagnose disease. Well-designed materials with controlled structures have great influence on the sensing performance. In this work, the ordered three dimensional inverse opal (3DIO) macroporous In2O3 films with additional via-hole architectures were fabricated and different amounts of gold nanoparticles (Au NPs) were loaded on the In2O3 films aiming at enhancing their electrical responses. The gas sensing to acetone toward diabetes diagnosis in exhaled breath was performed with different Au/In2O3 electrodes. Representatively, the best 3DIO Au/In2O3 sensor can detect acetone effectively at 340 °C with response of 42.4 to 5 ppm, the actual detection limit is as low as 20 ppb, and it holds a dynamic response of 11 s and a good selectivity. Moreover, clinical tests proved that the as-prepared 3DIO Au/In2O3 IO sensor could distinguish acetone biomarkers in human breath clearly. The excellent gas sensing properties of the Au/In2O3 electrodes were attributed to the ``spillover effects'' between Au and In2O3 and the special 3DIO structure. This work indicates that 3DIO Au/In2O3 composite is a promising electrode material for actual application in the monitoring and detection of diabetes through exhaled breath.Analyzing the volatile organic compounds (VOCs) in exhaled breath effectively is crucial to medical treatment, which can provide a fast and noninvasive way to diagnose disease. Well-designed materials with controlled structures have great influence on the sensing performance. In this work, the ordered three dimensional inverse opal (3DIO) macroporous In2O3 films with additional via-hole architectures were fabricated and different amounts of gold nanoparticles (Au NPs) were loaded on the In2O3 films aiming at enhancing their electrical responses. The gas sensing to acetone toward diabetes diagnosis in exhaled

  5. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    PubMed Central

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  6. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    PubMed

    Veal, Boyd W; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M; Eastman, Jeffrey A

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  7. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-06-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  8. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J.

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  9. Thin film buried anode battery

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  10. Effects of Sn doping on the morphology, structure, and electrical property of In2O3 nanofiber networks

    NASA Astrophysics Data System (ADS)

    Wu, Xu; Wang, Yihua; Yang, Bin

    2014-07-01

    This paper studies the effect of Sn doping on the morphological, structural, and electrical properties of the Sn-doping In2O3 nanofiber networks. In2O3-based nanofibers with various relative concentration of Sn precursor (0-20 mol%) were fabricated through the electrospinning method. Scanning electron microscopy observations show that, depending on the relative concentration of SnCl4 in the starting materials, the doped nanofibers with different morphologies, from smooth to corn-like and then to accidented, are fabricated. Transmission electron microscopy and X-ray diffraction analyses reveal that the Sn dopants influence the growth direction of seeds, resulting in doped nanoparticles having diverse shapes and sizes, which are critical for the formation of doped nanofiber with different morphology. From these nanofiber networks, we fabricated several thin sheets to characterize the effect of Sn concentration on the electrical resistivity. The resistivity of thin sheets decreased significantly before the doping concentration up to 12.5 mol%, and then increased slightly at a larger addition. This work will assist further understanding the formation of Sn-doped In2O3 nanofibers and is expected to be extended to other transparent conductive oxides.

  11. Thin film concentrator panel development

    NASA Astrophysics Data System (ADS)

    Zimmerman, D. K.

    1982-07-01

    The development and testing of a rigid panel concept that utilizes a thin film reflective surface for application to a low-cost point-focusing solar concentrator is discussed. It is shown that a thin film reflective surface is acceptable for use on solar concentrators, including 1500 F applications. Additionally, it is shown that a formed steel sheet substrate is a good choice for concentrator panels. The panel has good optical properties, acceptable forming tolerances, environmentally resistant substrate and stiffeners, and adaptability to low to mass production rates. Computer simulations of the concentrator optics were run using the selected reflector panel design. Experimentally determined values for reflector surface specularity and reflectivity along with dimensional data were used in the analysis. The simulations provided intercept factor and net energy into the aperture as a function of aperture size for different surface errors and pointing errors. Point source and Sun source optical tests were also performed.

  12. Superconducting UBe 13 thin films

    NASA Astrophysics Data System (ADS)

    Quateman, J. H.; Tedrow, P. M.

    1985-12-01

    Of the known heavy fermion superconductors only UBe 13 can have a low resistivity ratio and still go superconducting. In addition, it is a line compound with a melting temperature of nearly twice that of the constituents. These facts make UBe 13 a promising choice for fabrication in thin film form. We have successfully made 2000 Å UBe 13 films by coevaporation of uranium and beryllium on 700°C substrates which were then heated in situ to 1100°C. These films were polycrystalline as shown by X-ray diffraction and have Tc's of 0.85 K, that of the bulk. The resistivity rise at approximately 2 K and the strong negative magnetoresistance were also of the same magnitude as that of the bulk, as were both the perpendicular and parallel critical fields. Thin films of UBe 13 will make more accessible tunneling and proximity effect experiments which can help elucidate the nature of the superconductivity of this compound.

  13. Porous Nd-doped In2O3 nanotubes with excellent formaldehyde sensing properties

    NASA Astrophysics Data System (ADS)

    Wang, Xuesong; Zhang, Jinbao; He, Yue; Wang, Lianyuan; Liu, Li; Wang, Han; Guo, Xuexin; Lian, Hongwei

    2016-08-01

    Pure and Nd-doped porous In2O3 nanotubes have been successfully synthesized by single-capillary electrospinning method. The SEM images displays the novel structure of Nd-doped In2O3 which has pores distributed on the surface of nanotubes. The subsequent test results demonstrate that Nd-doped porous In2O3 nanotubes possess excellent gas-sensing properties to formaldehyde. The response of Nd-doped porous In2O3 nanotubes to 100 ppm formaldehyde is 44.6 at the optimum operating temperature of 240 °C, which is 3.6 times larger than that of pure porous In2O3 nanotubes (12.5), and the response and recovery times to 100 ppm formaldehyde are 15 and 50 s, respectively.

  14. Magnetic properties of In2O3 containing Fe3O4 nanoparticles

    NASA Astrophysics Data System (ADS)

    Alshammari, Marzook S.; Alqahtani, Mohammed S.; Albargi, Hasan B.; Alfihed, Salman A.; Alshetwi, Yaser A.; Alghihab, Abdulrahman A.; Alsamrah, Abdullah M.; Alshammari, Nawaf M.; Aldosari, Mohammed A.; Alyamani, Ahmed; Hakimi, Ali M. H. R.; Heald, Steve M.; Blythe, Harry J.; Blamire, Mark G.; Fox, A. Mark; Gehring, Gillian A.

    2014-10-01

    Films of Fe-doped In2O3 that were deliberately fabricated so they contained Fe3O4 nanoparticles were deposited on sapphire substrates by pulsed laser deposition at low oxygen pressure. The concentration of Fe was varied between 1% and 5%, and the effect of including 5% of Sn and vacuum annealing were also investigated. Structural analysis indicated a high concentration of Fe3O4 nanoparticles that caused substantial values of the coercive field at room temperature. Transport measurements indicated that the films were metallic, and an anomalous Hall effect was observed for the sample with 5% of Fe. The concentration of nanoparticles was reduced dramatically by the inclusion of 5% of Sn. Magnetic circular dichroism spectra taken in field and at remanence were analyzed to show that the samples had a magnetically polarized defect band located below the conduction band as well as magnetic Fe3O4 nanoparticles. The signal from the defect states near the band edge was enhanced by increasing the number of carriers by either including Sn or by annealing in vacuum.

  15. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  16. Zinc oxide thin film acoustic sensor

    NASA Astrophysics Data System (ADS)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Mansour, Hazim Louis; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah

    2013-12-01

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  17. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  18. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  19. Effect of deposition temperature on the properties of ZnO-doped indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Lee, Seung Jin; Cho, Shinho

    2014-05-01

    ZnO-doped In2O3 (ZIO) thin films were deposited on quartz substrates at various deposition temperatures by radio-frequency magnetron sputtering. All the ZIO thin films showed a significant dependence on the deposition temperature. A strong preferential growth orientation was observed for all samples except the one deposited at 25 °C. As the deposition temperature was increased, the crystalline orientation of the main (222) plane did not change, but the full width at half maximum got smaller and the intensity increased rapidly. The ZIO thin film deposited at 100 °C showed the highest figure of merit with an average particle size of 60 nm, a bandgap energy of 3.51 eV, an electrical resistivity of 2.63 × 10-3 Ωcm, and an electron concentration of 4.99 × 1020 cm-3. A blue-shift of optical bandgap enegy was observed with increasing deposition temperature. These results suggest that the optimum deposition temperature for growing high-quality ZIO films is 100 °C and that the structural, optical, and electrical properties of ZIO thin films can be modulated by controlling the deposition temperature.

  20. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  1. Thin film based plasmon nanorulers

    NASA Astrophysics Data System (ADS)

    Taylor, Alexander D.; Lu, Chang; Geyer, Scott; Carroll, D. L.

    2016-07-01

    In this work, isolated metal nanoparticles are supported on a dielectric thin film that is placed on a conducting plane. The optical scattering characteristics of these metal nanoparticles are directly correlated with the localized surface plasmon states of the nanoparticle—image particle dimer, formed in the conducting plane below. Quantification of plasmon resonance shifts can be directly correlated with the application of the plasmon nanoruler equation. This simple geometry shows that direct optical techniques can be used to resolve thickness variations in dielectrics of only a few nanometers.

  2. Electrical, structural, and optical properties of sulfurized Sn-doped In2O 3 nanowires.

    PubMed

    Zervos, M; Mihailescu, C N; Giapintzakis, J; Othonos, A; Travlos, A; Luculescu, C R

    2015-12-01

    Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing the Sn:In2O3 nanowires to H2S at 300 °C but also cubic bixbyite In2O3, which remains dominant, and the emergence of rhombohedral In2(SO4)3 at 400 °C. The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4 eV corresponding to band edge emission from In2O3. In contrast, Sn:In2O3 nanowires grown on glass at 500 °C can be treated under H2S only below 200 °C which is important for the fabrication of Cu2S/Sn:In2O3 core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells. PMID:26231685

  3. In2O3 Nanotower Hydrogen Gas Sensors Based on Both Schottky Junction and Thermoelectronic Emission

    NASA Astrophysics Data System (ADS)

    Zheng, Zhao Qiang; Zhu, Lian Feng; Wang, Bing

    2015-07-01

    Indium oxide (In2O3) tower-shaped nanostructure gas sensors have been fabricated on Cr comb-shaped interdigitating electrodes with relatively narrower interspace of 1.5 μm using thermal evaporation of the mixed powders of In2O3 and active carbon. The Schottky contact between the In2O3 nanotower and the Cr comb-shaped interdigitating electrode forms the Cr/In2O3 nanotower Schottky diode, and the corresponding temperature-dependent I- V characteristics have been measured. The diode exhibits a low Schottky barrier height of 0.45 eV and ideality factor of 2.93 at room temperature. The In2O3 nanotower gas sensors have excellent gas-sensing characteristics to hydrogen concentration ranging from 2 to 1000 ppm at operating temperature of 120-275 °C, such as high response (83 % at 240 °C to 1000 ppm H2), good selectivity (response to H2, CH4, C2H2, and C3H8), and small deviation from the ideal value of power exponent β (0.48578 at 240 °C). The sensors show fine long-term stability during exposure to 1000 ppm H2 under operating temperature of 240 °C in 30 days. Lots of oxygen vacancies and chemisorbed oxygen ions existing in the In2O3 nanotowers according to the x-ray photoelectron spectroscopy (XPS) results, the change of Schottky barrier height in the Cr/In2O3 Schottky junction, and the thermoelectronic emission due to the contact between two In2O3 nanotowers mainly contribute for the H2 sensing mechanism. The growth mechanism of the In2O3 nanotowers can be described to be the Vapor-Solid (VS) process.

  4. New devices using ferroelectric thin films

    SciTech Connect

    Land, C.E.; Butler, M.A.; Martin, S.J.

    1989-01-01

    Recent developments in the fabrication technologies of ferroelectric thin films in general and of PZT (lead zirconate titanate) and PLZT (lead lanthanum zirconate titanate) thin films in particular have suggested the feasibility of several new devices. Integrated optical devices for information processing and high-speed switching, high-density optical information processing and storage devices and spatial light modulators are some of the applications currently being investigated for these films. Ongoing studies of the longitudinal electrooptic effects and the photosensitivities of PZT and PLZT thin films have established the feasibility of erasable/rewritable optical memories with fast switching and potentially long lifetimes compared to current magneto-optic thin film devices. Some properties of PZT thin films and of new devices based on those properties are described in this paper. 15 refs., 5 figs., 1 tab.

  5. Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.

    PubMed

    Swisher, Sarah L; Volkman, Steven K; Subramanian, Vivek

    2015-05-20

    Semiconducting metal oxides (ZnO, SnO2, In2O3, and combinations thereof) are a uniquely interesting family of materials because of their high carrier mobilities in the amorphous and generally disordered states, and solution-processed routes to these materials are of particular interest to the printed electronics community. Colloidal nanocrystal routes to these materials are particularly interesting, because nanocrystals may be formulated with tunable surface properties into stable inks, and printed to form devices in an additive manner. We report our investigation of an In2O3 nanocrystal synthesis for high-performance solution-deposited semiconductor layers for thin-film transistors (TFTs). We studied the effects of various synthesis parameters on the nanocrystals themselves, and how those changes ultimately impacted the performance of TFTs. Using a sintered film of solution-deposited In2O3 nanocrystals as the TFT channel material, we fabricated devices that exhibit field effect mobility of 10 cm(2)/(V s) and an on/off current ratio greater than 1 × 10(6). These results outperform previous air-stable nanocrystal TFTs, and demonstrate the suitability of colloidal nanocrystal inks for high-performance printed electronics. PMID:25915094

  6. Structural, optical and electrical properties of Zr-doped In₂O₃ thin films.

    PubMed

    Manoharan, C; Jothibas, M; Jeyakumar, S Johnson; Dhanapandian, S

    2015-06-15

    Undoped and zirconium doped indium oxide (ZrIO) thin films were deposited on glass substrate at a substrate temperature of 450°C by spray pyrolysis method. The effect of zirconium (Zr) dopant concentration (0-11 at.%) on the structural, morphological, optical and electrical properties of n-type ZrIO films were studied. X-ray diffraction (XRD) results confirmed the polycrystalline nature of the ZrIO thin film with cubic structure. The grain size was decreased from 25 to 15.75 nm with Zr doping. The scanning electron microscopy (SEM) showed that the surface morphology of the films were changed with Zr doping. The surface roughness of the films was investigated by atomic force microscopy (AFM) and was found to be increased with the increasing of Zr doping percentage. A blue shift of the optical band gap was observed. The optical band was gap decreased from 3.50 to 3.0eV with increase in Zr concentrations. Room temperature photoluminescence (PL) measurement of the deposited films indicated the incorporation of Zr in In2O3 lattice. The film had low resistivity of 6.4 × 10(-4)Ωcm and higher carrier concentration of 2.5 × 10(20) was obtained at a doping ratio of 7 at.%. PMID:25766478

  7. Electrostatic thin film chemical and biological sensor

    DOEpatents

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  8. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  9. High performance In2O3 nanowire transistors using organic gate nanodielectrics

    NASA Astrophysics Data System (ADS)

    Ju, Sanghyun; Ishikawa, Fumiaki; Chen, Pochiang; Chang, Hsiao-Kang; Zhou, Chongwu; Ha, Young-geun; Liu, Jun; Facchetti, Antonio; Marks, Tobin J.; Janes, David B.

    2008-06-01

    We report the fabrication of high performance nanowire transistors (NWTs) using In2O3 nanowires as the active channel and a self-assembled nanodielectric (SAND) as the gate insulator. The SAND-based single In2O3 NWTs are controlled by individually addressed gate electrodes. These devices exhibit n-type transistor characteristics with an on-current of ˜25μA for a single In2O3 nanowire at 2.0Vds, 2.1Vgs, a subthreshold slope of 0.2V/decade, an on-off current ratio of 106, and a field-effect mobility of ˜1450cm2/Vs. These results demonstrate that SAND-based In2O3 NWTs are promising candidates for high performance nanoscale logic technologies.

  10. Characteristics Of Vacuum Deposited Sucrose Thin Films

    NASA Astrophysics Data System (ADS)

    Ungureanu, F.; Predoi, D.; Ghita, R. V.; Vatasescu-Balcan, R. A.; Costache, M.

    Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p ~ 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

  11. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  12. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1993-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  13. Electronic Structure of In2O3 from Resonant X-ray Emission Spectroscopy

    SciTech Connect

    Piper, L.; DeMasi, A; Cho, S; Smith, K; Fuchs, F; Bechstedt, F; Korber, C; Klein, A; Payne, D; Egdell, R

    2009-01-01

    The valence and conduction band structures of In2O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2O3.

  14. Preparation and Characterization of PZT Thin Films

    SciTech Connect

    Bose, A.; Sreemany, M.; Bhattacharyya, D. K.; Sen, Suchitra; Halder, S. K.

    2008-07-29

    In analogy with Piezoelectric Wafer Active Sensors (PWAS), Lead Zirconate Titanate (PZT) thin films also seem to be promising for Structural Health Monitoring (SHM) due to a number of reasons. Firstly, PZT thin films with well oriented domains show enhanced piezoelectric response. Secondly, PWAS requires comparatively large voltage leading to a demand for thin PZT films (<< {mu}m in thickness) for low voltage operation at {<=}10 V. This work focuses on two different aspects: (a) growing oriented PZT thin films in ferroelectric perovskite phase in the range of (80-150) nm thickness on epitaxial Si/Pt without a seed layer and (b) synthesizing perovskite phase in PZT thin films on Corning glass 1737 using a seed layer of TiO{sub x} (TiO{sub x} thickness ranging between 30 nm to 500 nm)

  15. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. . Electro-Optics Technology Center); Wei, G. ); Yu, P.C. )

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  16. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K.; Wei, G.; Yu, P.C.

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  17. Metal-catalyzed growth of In2O3 nanotowers using thermal evaporation and oxidation method

    NASA Astrophysics Data System (ADS)

    Jian, Liu; Shihua, Huang; Lü, He

    2015-12-01

    Large-scale In2O3 nanotowers with different cross sections were synthesized by a thermal evaporation and oxidation technique using metal as the catalyst. The morphologies and structural characterizations of In2O3 nanotowers are dependent on growth processes, such as different metal (Au, Ag or Sn) catalysts, the relative position of the substrate and evaporation source, growth temperature, gas flow rate, and growth time. In2O3 nanotowers cannot be observed using Sn as the catalyst, which indicates that metal liquid droplets play an important role in the initial stages of the growth of In2O3 nanotowers. The formation of an In2O3 nanotower is attributed to the competitive growth model between a lateral growth controlled by vapor-solid mechanism and an axial vapor-liquid-solid growth mechanism mediated by metal liquid nanodroplets. The synthesized In2O3 nanostructures with novel tower-shaped morphology may have potential applications in optoelectronic devices and gas sensors. Project supported by the National Natural Science Foundation of China (No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  18. Effects of Particle Size on the Gas Sensitivity and Catalytic Activity of In2O3

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoshui; Gu, Ruiqin; Zhao, Jinling; Jin, Guixin; Zhao, Mengke; Xue, Yongliang

    2015-10-01

    Nanosized In2O3 powders with different particle sizes were prepared by the microemulsion synthetic method. The effects of particle size on the gas-sensing and catalytic properties of the as-prepared In2O3 were investigated. Reductions in particle size to nanometer levels improved the sensitivity and catalytic activity of In2O3 to i-C4H10 and C2H5OH. The sensitivity of nanosized In2O3 (<42 nm) sensors to i-C4H10, H2 and C2H5OH was 2-4 times higher than that of chemically precipitated In2O3 (130 nm) sensor. A nearly linear relationship was observed between the catalytic activity and specific surface area of In2O3 for the oxidation of i-C4H10 and C2H5OH at 275 °C. The relationship between gas sensitivity and catalytic activity was further discussed. The results of this work reveal that catalytic activity plays a key role in enhancing the sensitivity of gas-sensing materials.

  19. Electrical and optical properties of thin films consisting of tin-doped indium oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Ederth, J.; Johnsson, P.; Niklasson, G. A.; Hoel, A.; Hultåker, A.; Heszler, P.; Granqvist, C. G.; van Doorn, A. R.; Jongerius, M. J.; Burgard, D.

    2003-10-01

    Electrical transport and optical properties were investigated in porous thin films consisting of In2O3:Sn (indium tin oxide, ITO) nanoparticles with an initial crystallite size of ˜16 nm and a narrow size distribution. Temperature dependent resistivity was measured in the 77130 K and negative at t<130 K. Effects of annealing on the ITO nanoparticles were investigated by analyzing the spectral optical reflectance and transmittance using effective medium theory and accounting for ionized impurity scattering. Annealing was found to increase both charge carrier concentration and mobility. The ITO nanoparticles were found to have a resistivity as low as 2×10-4 Ω cm, which is comparable to the resistivity of dense high quality In2O3:Sn films. Particulate samples with a luminous transmittance exceeding 90% and a resistivity of ˜10-2 Ω cm were obtained.

  20. Structural and optical characterization of In2O3/PANI nanocomposite prepared by in-situ polymerization

    NASA Astrophysics Data System (ADS)

    Janeoo, Shashi; Sharma, Mamta; Singh, Gurinder; Goswamy, J.

    2016-05-01

    Polyaniline-indium oxide (In2O3/PANI) nanocomposite have been prepared by in-situ polymerization of aniline and as-synthesized In2O3 nanoparticles. X-ray diffraction (XRD), Transmission electron microscopy (TEM), Fourier transformation infrared (FTIR) and UV/Vis spectroscopy techniques are used to investigate the structural and optical properties of In2O3/PANI nanocomposite. TEM analysis shows In2O3 nanoparticles are embedded in PANI nanofibers. FTIR spectra show the good interactions between PANI nanofibers and In2O3 nanoparticles. The band gap and electronic transitions in In2O3/PANI nanocomposite is determined by using UV/Vis spectra.

  1. Thin-film optical shutter

    NASA Astrophysics Data System (ADS)

    Matlow, S. L.

    1981-02-01

    The ideal solution to the excessive solar gain problem is an optical shutter, a device which switches from being highly transmissive to solar radiation to being highly reflective to solar radiation when a critical temperature is reached in the enclosure. The switching occurs because one or more materials in the device undergo a phase transition at the critical temperature. A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, was chosen as the one most likely to meet all of the requirements of the thin film optical shutter project (TFOS). The reason for this choice is explored. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a quantum mechanical method, the equilibrium bond length (EBL) theory, was developed. Some results of EBL theory are included.

  2. Thin film bioreactors in space

    NASA Technical Reports Server (NTRS)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  3. Wrinkle motifs in thin films

    PubMed Central

    Budrikis, Zoe; Sellerio, Alessandro L.; Bertalan, Zsolt; Zapperi, Stefano

    2015-01-01

    On length scales from nanometres to metres, partial adhesion of thin films with substrates generates a fascinating variety of patterns, such as ‘telephone cord’ buckles, wrinkles, and labyrinth domains. Although these patterns are part of everyday experience and are important in industry, they are not completely understood. Here, we report simulation studies of a previously-overlooked phenomenon in which pairs of wrinkles form avoiding pairs, focusing on the case of graphene over patterned substrates. By nucleating and growing wrinkles in a controlled way, we characterize how their morphology is determined by stress fields in the sheet and friction with the substrate. Our simulations uncover the generic behaviour of avoiding wrinkle pairs that should be valid at all scales. PMID:25758174

  4. BDS thin film damage competition

    SciTech Connect

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  5. Dynamic delamination of patterned thin films

    NASA Astrophysics Data System (ADS)

    Kandula, Soma S. V.; Tran, Phuong; Geubelle, Philippe H.; Sottos, Nancy R.

    2008-12-01

    We investigate laser-induced dynamic delamination of a patterned thin film on a substrate. Controlled delamination results from our insertion of a weak adhesion region beneath the film. The inertial forces acting on the weakly bonded portion of the film lead to stable propagation of a crack along the film/substrate interface. Through a simple energy balance, we extract the critical energy for interfacial failure, a quantity that is difficult and sometimes impossible to characterize by more conventional methods for many thin film/substrate combinations.

  6. AES analysis of barium fluoride thin films

    NASA Astrophysics Data System (ADS)

    Kashin, G. N.; Makhnjuk, V. I.; Rumjantseva, S. M.; Shchekochihin, Ju. M.

    1993-06-01

    AES analysis of thin films of metal fluorides is a difficult problem due to charging and decomposition of such films under electron bombardment. We have developed a simple algorithm for a reliable quantitative AES analysis of metal fluoride thin films (BaF 2 in our work). The relative AES sensitivity factors for barium and fluorine were determined from BaF 2 single-crystal samples. We have investigated the dependence of composition and stability of barium fluoride films on the substrate temperature during film growth. We found that the instability of BaF 2 films grown on GaAs substrates at high temperatures (> 525°C) is due to a loss of fluorine. Our results show that, under the optimal electron exposure conditions, AES can be used for a quantitative analysis of metal fluoride thin films.

  7. Infrared radiation of thin plastic films.

    NASA Technical Reports Server (NTRS)

    Tien, C. L.; Chan, C. K.; Cunnington, G. R.

    1972-01-01

    A combined analytical and experimental study is presented for infrared radiation characteristics of thin plastic films with and without a metal substrate. On the basis of the thin-film analysis, a simple analytical technique is developed for determining band-averaged optical constants of thin plastic films from spectral normal transmittance data for two different film thicknesses. Specifically, the band-averaged optical constants of polyethylene terephthalate and polyimide were obtained from transmittance measurements of films with thicknesses in the range of 0.25 to 3 mil. The spectral normal reflectance and total normal emittance of the film side of singly aluminized films are calculated by use of optical constants; the results compare favorably with measured values.

  8. Thin film nitinol microstent for aneurysm occlusion.

    PubMed

    Chun, Youngjae; Levi, Daniel S; Mohanchandra, K P; Vinuela, Fernando; Vinuela, Fernando; Carman, Gregory P

    2009-05-01

    Thin film nitinol produced by sputter deposition was used in the design of microstents intended to treat small vessel aneurysms. Thin film microstents were fabricated by "hot-target" dc sputter deposition. Both stress-strain curves and differential scanning calorimetry curves were generated for the film used to fabricate stents. The films used for stents had an A(f) temperature of approximately 36 degrees C allowing for body activated response from a microcatheter. The 10 microm film was only slightly radio-opaque; thus, a Td marker was attached to the stents to guide fluoroscopic delivery. Thin film microstents were tested in a flow loop with and without nitinol support skeletons to give additional radial support. Stents could be compressed into and easily delivered with <3 Fr catheters. Theoretical frictional and wall drag forces on a thin film nitinol small vessel vascular stent were calculated, and the radial force exerted by thin film stents was evaluated theoretically and experimentally. In vivo studies in swine confirmed that thin film nitinol microstents could be deployed accurately and consistently in the swine cranial vasculature. PMID:19388784

  9. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors

    NASA Astrophysics Data System (ADS)

    Chen, Bin; Li, Mi; Liu, Yiwei; Zuo, Zhenghu; Zhuge, Fei; Zhan, Qing-Feng; Li, Run-Wei

    2011-05-01

    We investigated capacitors based on polycrystalline narrow-band-gap BiFeO3 (BFO) thin films with different top electrodes. The photovoltaic response for the capacitor with a Sn-doped In2O3 (ITO) top electrode is about 25 times higher than that with a Au top electrode, which indicates that the electrode plays a key role in determining the photovoltaic response of ferroelectric thin film capacitors, as simulated by Qin et al (2009 Appl. Phys. Lett. 95 22912). The light-to-electricity photovoltaic efficiency for the ITO/polycrystalline BFO/Pt capacitor can reach 0.125%. Furthermore, under incident light of 450 µW cm - 2 and zero bias, the corresponding photocurrent varies from 0.2 to 200 pA, that is, almost a 1000-fold photoconductivity enhancement. Our experiments suggest that polycrystalline BFO films are promising materials for application in photo-sensitive and energy-related devices.

  10. Method of producing thin cellulose nitrate film

    DOEpatents

    Lupica, S.B.

    1975-12-23

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent.

  11. Optical information storage in PLZT thin films

    SciTech Connect

    Land, C.E.

    1989-01-01

    The feasibility of storing and reading high density optical information in lead zirconate titanate (PZT) and in lead lanthanum zirconate titanate (PLZT) thin films depends on both the longitudinal electrooptic coefficients and the photosensitivities of the films. This paper describes the methods used to measure both the longitudinal electrooptic effects and the photosensitivities of the thin films. The results of these measurements were used to evaluate a longitudinal quadratic electrooptic R coefficient, a linear electrooptic r/sub c/ coefficient and the wavelength dependence of the photosensitivity of a composition of PZT polycrystalline thin film. The longitudinal electrooptic R and r/sub c/ coefficients are about an order of magnitude less than the transverse R and R/sub c/ coefficients of the bulk ceramics of similar compositions. This is attributed to clamping of the film by the rigid substrate. The large birefringence after poling (>10/sup /minus/2/) suggests that the optic axes of the films are preferentially oriented normal to the film surface. The techniques used for evaluating the photosensitivities of the thin films are based on measuring the photocurrent generated rather than the reduction in coercive voltage (used previously for bulk ceramics) when the film is exposed to light. The thin film photosensitivities appear to be about three orders of magnitude higher than those of bulk ceramics of similar compositions. 14 refs., 12 figs., 1 tab.

  12. Thin film solar cell module

    SciTech Connect

    Gay, R.R.

    1987-01-20

    A thin film solar cell module is described comprising a first solar cell panel containing an array of solar cells consisting of a TFS semiconductor sandwiched between a transparent conductive zinc oxide layer and a transparent conductive layer selected from the group consisting of tin oxide, indium tin oxide, and zinc oxide deposited upon a transparent superstrate, and a second solar cell panel containing an array of solar cells consisting of a CIS semiconductor layer sandwiched between a zinc oxide semiconductor layer and a conductive metal layer deposited upon an insulating substrate. The zinc oxide semiconductor layer contains a first relatively thin layer of high resistivity zinc oxide adjacent the CIS semiconductor and a second relatively thick layer of low resistivity zinc oxide overlying the high resistivity zinc oxide layer. The transparent conductive zinc oxide layer of the first panel faces the low resistivity zinc oxide layer of the second panel, the first and second panels being positioned optically in series and separated by a transparent insulating layer.

  13. VUV thin films, chapter 7

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.

    1993-01-01

    The application of thin film technology to the vacuum ultraviolet (VUV) wavelength region from 120 nm to 230 nm has not been fully exploited in the past because of absorption effects which complicate the accurate determination of the optical functions of dielectric materials. The problem therefore reduces to that of determining the real and imaginary parts of a complex optical function, namely the frequency dependent refractive index n and extinction coefficient k. We discuss techniques for the inverse retrieval of n and k for dielectric materials at VUV wavelengths from measurements of their reflectance and transmittance. Suitable substrate and film materials are identified for application in the VUV. Such applications include coatings for the fabrication of narrow and broadband filters and beamsplitters. The availability of such devices open the VUV regime to high resolution photometry, interferometry and polarimetry both for space based and laboratory applications. This chapter deals with the optics of absorbing multilayers, the determination of the optical functions for several useful materials, and the design of VUV multilayer stacks as applied to the design of narrow and broadband reflection and transmission filters and beamsplitters. Experimental techniques are discussed briefly, and several examples of the optical functions derived for selected materials are presented.

  14. Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method

    NASA Astrophysics Data System (ADS)

    Lau, L. N.; Ibrahim, N. B.; Baqiah, H.

    2015-08-01

    This research was carried out to study the effect of different precursor concentrations on the physical properties of indium oxide (In2O3) thin film. In2O3 is a promising n-type semiconductor material that has been used in optoelectronic applications because of its highly transparent properties. It is a transparent conducting oxide with a wide band gap (∼3.7 eV). The experiment was started by preparing different precursor concentrations of indium nitrate hydrate (In (NO3)·H2O) solution and followed by the spin coating technique prior to an annealing process at 500 °C. Indium oxide thin films were characterized using an X-ray diffractometer, an ultraviolet-visible spectroscopy, a field emission scanning electron microscope and a Hall Effect Measurement System in order to determine the influence caused by the different molarities of indium oxide. The result showed that the film thickness increased with the indium oxide molarity. Film thicknesses were in the range of 0.3-135.1 nm and optical transparency of films was over 94%. Lowest resistivity of 2.52 Ω cm with a mobility of 26.60 cm2 V-1 S-1 and carrier concentration of 4.27 × 1017 cm-3 was observed for the indium oxide thin film prepared at 0.30 M.

  15. Synthesis of periodic mesoporous silica thin films

    SciTech Connect

    Anderson, M.T.; Martin, J.E.; Odinek, J.G.; Newcomer, P.

    1996-06-01

    We have synthesized periodic mesoporous silica thin films from homogeneous solutions. To synthesize the films, a thin layer of a pH 7 micellar coating solution that contains TMOS (tetramethoxysilane) is dip or spin-coated onto Si wafers, borosilicate glass, or quartz substrates. NH3 gas is diffused into the solution and causes rapid hydrolysis and condensation of the TMOS and the formation of periodic mesoporous thin films within 10 seconds. Combination of homogenous solutions and rapid product formation maximizes the concentration of the desired product and provides a controlled, predictable microstructure. The films have been made continuous and crack-free by optimizing initial silica concentration and film thickness. The films are being evaluated as high surface area, size-selective coatings for surface acoustic wave (SAW) sensors.

  16. Flexible thin metal film thermal sensing system

    NASA Technical Reports Server (NTRS)

    Thomsen, Donald L. (Inventor)

    2010-01-01

    A flexible thin metal film thermal sensing system is provided. A self-metallized polymeric film has a polymeric film region and a metal surface disposed thereon. A layer of electrically-conductive metal is deposited directly onto the self-metallized polymeric film's metal surface. Coupled to at least one of the metal surface and the layer of electrically-conductive metal is a device/system for measuring an electrical characteristic associated therewith as an indication of temperature.

  17. Surface roughness evolution of nanocomposite thin films

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; Hosson, J. Th. M. de

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growing interface is explained by ballistic effects resulting from impingements of ions to the growing thin film. These ballistic effects are sensitive to the flux and energy of impinging ions. The predictions of the model are compared with experimental data, and it is concluded that the thin film roughness can be further controlled by adjusting waveform, frequency, and width of dc pulses.

  18. Macro stress mapping on thin film buckling

    SciTech Connect

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  19. Excellent performance of gas sensor based on In2O3-Fe2O3 nanotubes

    NASA Astrophysics Data System (ADS)

    Li, Liu; Shouchun, Li; Xin, Guo; Yue, He; Lianyuan, Wang

    2016-01-01

    In2O3-Fe2O3 nanotubes are synthesized by an electrospinning method. The as-synthesized materials are characterized by scanning electron microscope and X-ray powder diffraction. The gas sensing results show that In2O3-Fe2O3 nanotubes exhibit excellent sensing properties to acetone and formaldehyde at different operating temperatures. The responses of gas sensors based on In2O3-Fe2O3 nanotubes to 100 ppm acetone and 100 ppm formaldehyde are 25 (240 °C) and 15 (260 °C), and the response/recovery times are 3/7 s and 4/7 s, respectively. The responses of In2O3-Fe2O3 nanotubes to 1 ppm acetone (240 °C) and formaldehyde (260 °C) are 3.5 and 1.8, respectively. Moreover, the gas sensor based on In2O3-Fe2O3 nanotubes also possesses an excellent selectivity to acetone and formaldehyde. Project supported by the Jilin Provincial Science and Technology Department (No. 20140204027GX).

  20. An investigation into the conversion of In2O3 into InN nanowires

    PubMed Central

    2011-01-01

    Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding to the body centred cubic crystal structure of In2O3 while the photoluminescence (PL) spectrum at 300 K consisted of two broad peaks, centred around 400 and 550 nm. The post-growth nitridation of In2O3 NWs was systematically investigated by varying the nitridation temperature between 500 and 900°C, flow of NH3 and nitridation times between 1 and 6 h. The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In2O3 to InN. We find that the nitridation of In2O3 is effective by using NH3 and H2 or a two-step temperature nitridation process using just NH3 and slower ramp rates. We discuss the nitridation mechanism and its effect on the PL. PMID:21711836

  1. A simple large-scale synthesis of mesoporous In2O3 for gas sensing applications

    NASA Astrophysics Data System (ADS)

    Zhang, Su; Song, Peng; Yan, Huihui; Yang, Zhongxi; Wang, Qi

    2016-08-01

    In this paper, large-scale mesoporous In2O3 nanostructures were synthesized by a facile Lewis acid catalytic the furfural alcohol resin (FAR) template route for the high-yield. Their morphology and structure were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), differential thermal and thermogravimetry analysis (DSC-TG) and the Brunauer-Emmett-Teller (BET) approach. The as-obtained mesoporous In2O3 nanostructures possess excellent mesoporous and network structure, which increases the contact area with the gases, it is conducive for adsorption-desorption of gas on the surface of In2O3. The In2O3 particles and pores were both about 15 nm and very uniform. In gas-sensing measurements with target gases, the gas sensor based on mesoporous In2O3 nanostructures showed a good response, short response-recovery time, good selectivity and stability to ethanol. These properties are due to the large specific surface area of mesoporous structure. This synthetic method could use as a new design concept for functional mesoporous nanomaterials and for mass production.

  2. Photonics applications of nanostructured thin films

    NASA Astrophysics Data System (ADS)

    Kennedy, Scott Ronald

    Using an advanced thin film fabrication technique known as Glancing Angle Deposition (GLAD), it is possible to fabricate unique thin film nanostructures with characteristic dimensions on the order of a wavelength of light. By tailoring the morphologies of the films, they can be designed to exhibit particular optical properties that can be customized through advanced substrate motion and highly oblique flux incidence angles. In applications to photonics, controlling the flow of light for a specified task, GLAD thin films can be fabricated to provide the ability to manipulate incident light through controlled interactions of optical frequency electromagnetic radiation with the thin film nanostructures. Tetragonal square spiral photonic band gap crystals, a new class of periodic dielectric material that is characterized by the elimination of the density of states for frequencies lying in the stop gap of the crystal, can be fabricated using GLAD in a virtual single step process. The design and fabrication of these unique devices has been performed and the resultant crystals characterized in terms of optical response with respect to forbidden propagation modes, material properties, and advanced deposition techniques used to improve the overall structure. Chiral or helical thin films deposited using GLAD were also investigated, and have been shown to exhibit optical activity and circular birefringence due to their inherent structural anisotropy. It has been shown that the addition of nematic liquid crystals (LCs) to chiral thin films enhances the overall device performance due to order induced in the LCs by the film structure. This effect was investigated for a variety of materials and film structures. Finally, by developing a modified GLAD technique whereby the deposited film porosity is controlled through the angle of flux incidence, porous broadband antireflection coatings were produced. Using an appropriate effective medium theory to describe the index of refraction

  3. Passivation Effects in Copper Thin Films

    SciTech Connect

    Wiederhirn, G.; Nucci, J.; Richter, G.; Arzt, E.; Balk, T. J.; Dehm, G.

    2006-02-07

    We studied the influence of a 10 nm AlxOy passivation on the stress-temperature behavior of 100 nm and 1 {mu}m thick Cu films. At low temperatures, the passivation induces a large tensile stress increase in the 100 nm film; however, its effect on the 1 {mu}m film is negligible. At high temperatures, the opposite behavior is observed; while the passivation does not change the 100 nm film behavior, it strengthens the 1 {mu}m film by driving it deeper into compression. These observations are explained in light of a combination of constrained diffusional creep and dislocation dynamics unique to ultra-thin films.

  4. Research on Advanced Thin Film Batteries

    SciTech Connect

    Goldner, Ronald B.

    2003-11-24

    During the past 7 years, the Tufts group has been carrying out research on advanced thin film batteries composed of a thin film LiCo02 cathode (positive electrode), a thin film LiPON (lithium phosphorous oxynitride) solid electrolyte, and a thin film graphitic carbon anode (negative electrode), under grant DE FG02-95ER14578. Prior to 1997, the research had been using an rfsputter deposition process for LiCoOi and LiPON and an electron beam evaporation or a controlled anode arc evaporation method for depositing the carbon layer. The pre-1997 work led to the deposition of a single layer cell that was successfully cycled for more than 400 times [1,2] and the research also led to the deposition of a monolithic double-cell 7 volt battery that was cycled for more than 15 times [3]. Since 1997, the research has been concerned primarily with developing a research-worthy and, possibly, a production-worthy, thin film deposition process, termed IBAD (ion beam assisted deposition) for depositing each ofthe electrodes and the electrolyte of a completely inorganic solid thin film battery. The main focus has been on depositing three materials - graphitic carbon as the negative electrode (anode), lithium cobalt oxide (nominally LiCoCb) as the positive electrode (cathode), and lithium phosphorus oxynitride (LiPON) as the electrolyte. Since 1998, carbon, LiCoOa, and LiPON films have been deposited using the IBAD process with the following results.

  5. Performance Characterization of Monolithic Thin Film Resistors

    NASA Astrophysics Data System (ADS)

    Yin, Rong

    Thin film resistors have a large resistance range and stable performance under high temperature operating condition. Thin film resistors trimmed by laser beam are able to achieve very high precision on resistance value. As a result, thin film resistors have been widely used to improve the performance of integrated circuits such as operational amplifier, analog-to-digital (A/D) and digital -to-analog (D/A) converters, etc. In this dissertation, a new class of thin film resistors, silicon chrome (SiCr) thin film resistors, has been investigated at length. From thin film characterization to aging behavior modelling, we have carried out a series of engineering activities. The characteristics of the SiCr thin film incorporated into three bipolar processes were first determined. After laser trimming, we have measured a couple of physical parameters of the SiCr film in the heat affected zone (HAZ). This is the first time the sheet resistance and the temperature coefficient of resistance (TCR) of thin film in the HAZ have been characterized. Both thermal and d.c. load accelerated aging tests were performed. The test structures were subjected to the aging for 1000 hours. Based on the test data, we not only evaluated the classical thermal aging model for untrimmed thin film resistors, but also established several empirical thermal aging models for trimmed resistors and d.c. load aging models for both trimmed and untrimmed thin film resistors. All the experiments were carried out for both conventional bar resistors and our new Swiss Cheese (SC) resistors. For the first time, the performance of laser trimmed SC resistors, which was experimentally evaluated, shown a clear superiority over that of trimmed bar resistors. Besides these experiments, we have examined different die attach techniques and their effects on thin film resistors. Also, we have developed a number of hardware systems and software tools, such as a temperature controller, d.c. current source, temperature

  6. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  7. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  8. Ferromagnetic properties of fcc Gd thin films

    SciTech Connect

    Bertelli, T. P. Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y.

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  9. Analysis of the laser oxidation kinetics process of In-In(2)O(3) MTMO photomasks by laser direct writing.

    PubMed

    Xia, Feng; Zhang, Xinzheng; Wang, Meng; Liu, Qian; Xu, Jingjun

    2015-11-01

    One kind of novel grayscale photomask based on Metal-transparent-metallic-oxides (MTMOs) system fabricated by laser direct writing was demonstrated recently. Here, a multilayer oxidation model of In-In(2)O(3) film with a glass substrate was proposed to study the pulsed laser-induced oxidation mechanism. The distribution of the electromagnetic field in the film is calculated by the transfer matrix method. Temperature fields of the model are simulated based on the heat transfer equations with the Finite-Difference Time-Domain method. The oxidation kinetics process is studied based on the laser-induced Cabrera-Mott theory. The simulated oxidation processes are consistent with the experimental results, which mean that our laser-induced oxidation model can successfully interpret the fabrication mechanism of MTMO grayscale photomasks. PMID:26561189

  10. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  11. Recent developments in thin film solar cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    The present status of the development of thin film solar cells is reviewed, with emphasis on important areas for further research. The following aperture-area efficiencies were measured for thin film modules: a-Si:H, 9.8 percent, 933 sq cm; CuIn(Ga)Se2, 11.1 percent, 938 sq cm; and CdTe, 7.3 percent, 838 sq cm. CuIn(Ga)Se2 cells and modules demonstrated excellent efficiencies and stability. The cost advantage of thin film modules and the higher efficiency and improved stability resulting from multijunctions are shown. Engineering solutions are found to minimize light-induced degradation of a-Si:H solar cells. CdTe cells and modules, and cleaved epitaxial thin film III-V compound cells showed remarkable efficiencies.

  12. Thin film production method and apparatus

    DOEpatents

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  13. Highly stretchable wrinkled gold thin film wires

    NASA Astrophysics Data System (ADS)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  14. Mechanical Properties of Silicon Carbonitride Thin Films

    NASA Astrophysics Data System (ADS)

    Peng, Xiaofeng; Hu, Xingfang; Wang, Wei; Song, Lixin

    2003-02-01

    Silicon carbonitride thin films were synthesized by reactive rf sputtering a silicon carbide target in nitrogen and argon atmosphere, or sputtering a silicon nitride target in methane and argon atmosphere, respectively. The Nanoindentation technique (Nanoindenter XP system with a continuous stiffness measurement technique) was employed to measure the hardness and elastic modulus of thin films. The effects of sputtering power on the mechanical properties are different for the two SiCN thin films. With increasing sputtering power, the hardness and the elastic modulus decrease for the former but increase for the latter. The tendency is similar to the evolution trend of Si-C bonds in SiCN materials. This reflects that Si-C bonds provide greater hardness for SiCN thin films than Si-N and C-N bonds.

  15. Microstructure Related Properties of Optical Thin Films.

    NASA Astrophysics Data System (ADS)

    Wharton, John James, Jr.

    Both the optical and physical properties of thin film optical interference coatings depend upon the microstructure of the deposited films. This microstructure is strongly columnar with voids between the columns. Computer simulations of the film growth process indicate that the two most important factors responsible for this columnar growth are a limited mobility of the condensing molecules and self-shadowing by molecules already deposited. During the vacuum deposition of thin films, the microstructure can be influenced by many parameters, such as substrate temperature and vacuum pressure. By controlling these parameters and introducing additional ones, thin film coatings can be improved. In this research, ultraviolet irradiation and ion bombardment were examined as additional parameters. Past studies have shown that post-deposition ultraviolet irradiation can be used to relieve stress and reduce absorption in the far ultraviolet of silicon dioxide films. Ion bombardment has been used to reduce stress, improve packing density, and increase resistance to moisture penetration. Three refractory oxide materials commonly used in thin film coatings were studied; they are silicon dioxide, titanium dioxide, and zirconium dioxide. Both single-layer films and narrowband filters made of these materials were examined. A 1000-watt mercury-xenon lamp was used to provide ultraviolet irradiation. An inverted magnetron ion source was used to produce argon and oxygen ions. Ultraviolet irradiation was found to reduce the absorption and slightly increase the index of refraction in zirconium oxide films. X-ray diffraction analysis revealed that ultraviolet irradiation caused titanium oxide films to become more amorphous; their absorption in the ultraviolet was slightly reduced. No changes were noted in film durability. Ion bombardment enhanced the tetragonal (lll) peak of zirconium oxide but increased the absorption of both zirconium oxide and titanium oxide films. The titanium oxide

  16. Thin-film reliability and engineering overview

    NASA Technical Reports Server (NTRS)

    Ross, R. G., Jr.

    1984-01-01

    The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

  17. Epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

  18. Review of CdO thin films

    NASA Astrophysics Data System (ADS)

    Chandiramouli, R.; Jeyaprakash, B. G.

    2013-02-01

    Cadmium Oxide (CdO) thin film is one of the first transparent conducting oxide semiconductors. Its excellent optical and electronic properties have made CdO a promising material for flat panel displays. In this article, we provide a comprehensive review of the state-of-the-art research activities related to the 'preparation-property-application' triangle of CdO thin films.

  19. Advances in CZTS thin films and nanostructured

    NASA Astrophysics Data System (ADS)

    Ali, N.; Ahmed, R.; Bakhtiar-Ul-Haq; Shaari, A.

    2015-06-01

    Already published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.

  20. Thin wetting film lensless imaging

    NASA Astrophysics Data System (ADS)

    Allier, C. P.; Poher, V.; Coutard, J. G.; Hiernard, G.; Dinten, J. M.

    2011-03-01

    Lensless imaging has recently attracted a lot of attention as a compact, easy-to-use method to image or detect biological objects like cells, but failed at detecting micron size objects like bacteria that often do not scatter enough light. In order to detect single bacterium, we have developed a method based on a thin wetting film that produces a micro-lens effect. Compared with previously reported results, a large improvement in signal to noise ratio is obtained due to the presence of a micro-lens on top of each bacterium. In these conditions, standard CMOS sensors are able to detect single bacterium, e.g. E.coli, Bacillus subtilis and Bacillus thuringiensis, with a large signal to noise ratio. This paper presents our sensor optimization to enhance the SNR; improve the detection of sub-micron objects; and increase the imaging FOV, from 4.3 mm2 to 12 mm2 to 24 mm2, which allows the detection of bacteria contained in 0.5μl to 4μl to 10μl, respectively.

  1. Microstructural evolution of tungsten oxide thin films

    NASA Astrophysics Data System (ADS)

    Hembram, K. P. S. S.; Thomas, Rajesh; Rao, G. Mohan

    2009-10-01

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a "instability wheel" model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  2. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  3. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2013-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film solar cells have been considered as the most promising alternatives to crystalline silicon solar cells because of their high photo-electricity conversion efficiency, reliability, and stability. However, many fabrication methods of CIGS thin film are based on vacuum processes such as evaporation and sputtering techniques which are not cost efficient. This work develops a solution method using paste or ink liquid spin-coated on glass that would be competitive to conventional ways in terms of cost effective, non-vacuum needed, and quick processing. A mixture precursor was prepared by dissolving appropriate amounts of composition chemicals. After the mixture solution was cooled, a viscous paste was prepared and ready for spin-coating process. A slight bluish CIG thin film on substrate was then put in a tube furnace with evaporation of metal Se followed by depositing CdS layer and ZnO nanoparticle thin film coating to complete a solar cell fabrication. Structure, absorption spectrum, and photo-electricity conversion efficiency for the as-grown CIGS thin film solar cell are under study.

  4. Carbon Nanotube Thin-Film Antennas.

    PubMed

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed. PMID:27454334

  5. Laser processing for thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Compaan, Alvin D.

    1995-04-01

    Over the past decade major advances have occurred in the field of thin- film photovoltaics (PV) with many of them a direct consequence of the application of laser processing. Improved cell efficiencies have been achieved in crystalline and polycrystalline Si, in hydrogenated amorphous silicon, and in two polycrystalline thin-film materials. The use of lasers in photovoltaics includes laser hole drilling for emitter wrap-through, laser trenching for buried bus lines, and laser texturing of crystalline and polycrystalline Si cells. In thin-film devices, laser scribing is gaining increased importance for module interconnects. Pulsed laser recrystallization of boron-doped hydrogenated amorphous silicon is used to form highly conductive p-layers in p-i-n amorphous silicon cells and in thin-film transistors. Optical beam melting appears to be an attractive method for forming metal semiconductor alloys for contact formation. Finally, pulsed lasers are used for deposition of the entire semiconductor absorber layer in two types of polycrystalline thin-film cells-those based on copper indium diselenide and those based on cadmium telluride. In our lab we have prepared and studied heavily doped polycrystalline silicon thin films and also have used laser physical vapor deposition (LPVD) to prepare 'all-LPVD' CdS/CdTe solar cells on glass with efficiencies tested at NREL at 10.5%. LPVD is highly flexible and ideally suited for prototyping PV cells using ternary or quaternary alloys and for exploring new dopant combinations.

  6. Investigation of the dipole formation and growth behavior at In2O3|TiO2 heterojunctions using photoemission spectroscopy and atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Schaefer, Michael; Halpegamage, Sandamali; Batzill, Matthias; Schlaf, Rudy

    2016-02-01

    This paper discusses the investigation of the dipole formation at In2O3|TiO2 heterojunctions depending on preparation conditions, i.e., cleaning methods. In2O3 films were deposited using atomic layer deposition (ALD) onto solvent and in situ cleaned anatase and rutile film substrates. The interface dipole strength and film thickness were evaluated by photoemission spectroscopy. Our results indicate the formation of a large intrinsic and film thickness dependent interface dipole that reaches its maximum strength at monolayer thick ALD films. In addition, it was observed that UV photoelectron spectroscopy measurements introduced UV induced surface hydroxylation, which resulted in dipole potentials of -0.70 eV and -0.50 eV on solvent cleaned anatase and rutile, respectively. The overlayers also introduced small amounts of band bending (˜0.10 eV) at the interfaces. Taking these effects into account, the total dipole strength at monolayer thick In2O3 films was determined to be -0.96 eV for solvent cleaned anatase and rutile and -0.81 eV for in situ cleaned rutile. The deposition of single ALD cycles on differently cleaned rutile substrates resulted in similar work function values, suggesting little influence of the sample preparation method prior to ALD deposition on the dipole formation. This was assigned to the fact that ALD oxides benefit from ambient water related contamination by integrating the molecules into the growing ALD layer. Highest initial growth was observed on solvent cleaned rutile, followed by in-situ cleaned rutile and solvent cleaned anatase. The In2O3 growth converged at 0.3 Å/c past the nucleation regime.

  7. Multilayered metal oxide thin film gas sensors obtained by conventional and RF plasma-assisted laser ablation

    NASA Astrophysics Data System (ADS)

    Mitu, B.; Marotta, V.; Orlando, S.

    2006-04-01

    Multilayered thin films of In 2O 3 and SnO 2 have been deposited by conventional and RF plasma-assisted reactive pulsed laser ablation, with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser ( λ = 532 nm, τ = 7 ns) on Si(1 0 0) substrates, in O 2 atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported.

  8. Thin-Film Nanocapacitor and Its Characterization

    ERIC Educational Resources Information Center

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-01-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

  9. An Extension of Thin Film Optics

    NASA Astrophysics Data System (ADS)

    Apell, P.

    1985-10-01

    The classical McIntyre formula for p-polarized light incident on a thin film on a substrate is extended in general terms to include a realistic description of the interfaces and the possible excitation of plasma waves in the film. An earlier extension is critized and criteria are given for when the classical result is applicable.

  10. Thin films, asphaltenes, and reservoir wettability

    SciTech Connect

    Kaminsky, R.; Bergeron, V.; Radke, C.J. |

    1993-04-01

    Reservoir wettability impacts the success of oil recovery by waterflooding and other methods. To understand wettability and its alteration, thin-film forces in solid-aqueous-oil systems must be elucidated. Upon rupture of thick aqueous films separating the oil and rock phases, asphaltene components in the crude oil adsorb irreversibly on the solid surface, changing it from water-wet to oil-wet. Conditions of wettability alteration can be found by performing adhesion tests, in which an oil droplet is brought into contact with a solid surface. Exceeding a critical capillary pressure destabilizes the film, causing spontaneous film rupture to a molecularly adsorbed layer and oil adhesion accompanied by pinning at the three-phase contact line. The authors conduct adhesion experiments similar to those of Buckley and Morrow and simultaneously examine the state of the underlying thin film using optical microscopy and microinterferometry. Aqueous thin films between an asphaltic Orcutt crude oil and glass surfaces are studied as a function of aqueous pH and salinity. For the first time, they prove experimentally that strongly water-wet to strongly oil-wet wettability alteration and contact-angle pinning occur when thick aqueous films thin to molecularly adsorbed films and when the oil phase contains asphaltene molecules.

  11. Thin transparent films formed from powdered glass

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Glass film less than five mils thick is formed from powdered glass dispersed in an organic liquid, deposited on a substrate, and fused into place. The thin films can be cut and shaped for contact lenses, optical filters and insulating layers.

  12. Liquid phase deposition of electrochromic thin films

    SciTech Connect

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  13. Adhesion and friction of thin metal films

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  14. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  15. Redox Chemistries and Plasmon Energies of Photodoped In2O3 and Sn-Doped In2O3 (ITO) Nanocrystals

    SciTech Connect

    Schimpf, AM; Lounis, SD; Runnerstrom, EL; Milliron, DJ; Gamelin, DR

    2015-01-14

    Plasmonic doped semiconductor nanocrystals promise exciting opportunities for new technologies, but basic features of the relationships between their structures, compositions, electronic structures, and optical properties remain poorly understood. Here, we report a quantitative assessment of the impact of composition on the energies of localized surface plasmon resonances (LSPRs) in colloidal tin-doped indium oxide (Sn:In2O3, or ITO) nanocrystals. Using a combination of aliovalent doping and photodoping, the effects of added electrons and impurity ions on the energies of LSPRs in colloidal In2O3 and ITO nanocrystals have been evaluated. Photodoping allows electron densities to be tuned post-synthetically in ITO nanocrystals, independent of their Sn content. Because electrons added photochemically are easily titrated, photodoping also allows independent quantitative determination of the dependence of the LSPR energy on nanocrystal composition and changes in electron density. The data show that ITO LSPR energies are affected by both electron and Sn concentrations, with composition yielding a broader plasmon tuning range than achievable by tuning carrier densities alone. Aspects of the photodoping energetics, as well as magneto-optical properties of these ITO LSPRs, are also discussed.

  16. Thin porous indium tin oxide nanoparticle films: effects of annealing in vacuum and air

    NASA Astrophysics Data System (ADS)

    Ederth, J.; Hultåker, A.; Niklasson, G. A.; Heszler, P.; van Doorn, A. R.; Jongerius, M. J.; Burgard, D.; Granqvist, C. G.

    2005-11-01

    Electrical and optical properties were investigated in porous thin films consisting of In2O3:Sn (indium tin oxide; ITO) nanoparticles. The temperature-dependent resistivity was successfully described by a fluctuation-induced tunneling model, indicating a sample morphology dominated by clusters of ITO nanoparticles separated by insulating barriers. An effective-medium model, including the effect of ionized impurity scattering, was successfully fitted to measured reflectance and transmittance. Post-deposition treatments were carried out at 773 K for 2 h in both air and vacuum. It is shown that vacuum annealing increases either the barrier width or the area between two conducting clusters in the samples and, furthermore, an extra optical absorption occurs close to the band gap. A subsequent air annealing then reduces the effect of the barriers on the electrical properties and diminishes the absorption close to the band gap.

  17. Flexible Thin Metal Film Thermal Sensing System

    NASA Technical Reports Server (NTRS)

    Thomsen, Donald Laurence (Inventor)

    2012-01-01

    A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

  18. Microcrystalline organic thin-film solar cells.

    PubMed

    Verreet, Bregt; Heremans, Paul; Stesmans, Andre; Rand, Barry P

    2013-10-11

    Microcrystalline organic films with tunable thickness are produced directly on an indium-tin-oxide substrate, by crystallizing a thin amorphous rubrene film followed by its use as a template for subsequent homoepitaxial growth. These films, with exciton diffusion lengths exceeding 200 nm, produce solar cells with increasing photocurrents at thicknesses up to 400 nm with a fill factor >65%, demonstrating significant potential for microcrystalline organic electronic devices. PMID:23939936

  19. Transparent with wide band gap InZnO nano thin film: Preparation and characterizations

    NASA Astrophysics Data System (ADS)

    Sugumaran, Sathish; Ahmad, Mohd Noor Bin; Jamlos, Mohd Faizal; Bellan, Chandar Shekar; Pattiyappan, Sagadevan; Rajamani, Ranjithkumar; Sivaraman, Rathish Kumar

    2015-11-01

    Novel indium zinc oxide (InZnO) thin film of 100 nm thickness was prepared onto pre-cleaned glass plate by thermal evaporation technique from InZnO nanoparticles. The metal oxide (In-O and Zn-O) bond and In, Zn and O elements present in the films were confirmed by Fourier transform infrared spectroscopy and energy dispersive X-ray spectroscopy. The X-ray diffraction patterns revealed the mixed phase of cubic In2O3 and wurzite-hexagonal ZnO structure. SEM images showed smooth surface with uniform distribution of grains (201-240 nm) over the entire film surface. High transparency and low absorption obtained from optical study. The band gap energy was evaluated to be about 3.46-3.55 eV by Tauc's plot. The structure, smooth surface and high transparency with wide band gap energy lead the thermally evaporated InZnO nano thin film to be used for transparent layer in optoelectronic devices in the future.

  20. Process for making thin film solar cell

    SciTech Connect

    Eberspacher, C.; Ermer, J.H.; Mitchell, K.W.

    1991-09-03

    This paper describes a semiconducting thin film forced on a substrate by the method. It comprises: depositing a composite film of copper and indium on a substrate, the film having an atomic copper to indium ratio of about one, depositing a film of selenium on the composite copper indium film, the selenium film thickness selected to provide an atomic ratio of selenium to copper and indium of less than one, and heating the substrate with the composite copper indium film and the selenium film in the presence of H{sub 2}S gas for a time and at a temperature sufficient to cause interdiffusion of copper, indium, selenium and sulfur to form a semiconductor of the class CuInSe{sub 2{minus}x}S{sub x} where x is less than two.

  1. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments Database

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  2. Thin-film rechargeable lithium batteries

    SciTech Connect

    Dudney, N.J.; Bates, J.B.; Lubben, D.

    1995-06-01

    Thin-film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin-film battery.

  3. Thin Ice Films at Mineral Surfaces.

    PubMed

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood. PMID:27377606

  4. The preparation of ACEL thin films

    NASA Astrophysics Data System (ADS)

    Vecht, Aron

    1990-05-01

    Although thin film ACEL devices have become commercially available, the number of companies producing these displays has continued to diminish. The cause of their demise was not display performance, as both sufficient brightness and efficiency has been achieved, but the low return on the heavy capital investment due to the poor yields obtained in production. In order to make ACEL thin film devices more viable, the capital investment needs to be low and/or the production yields high. Opting for relatively expensive sputtering or ALE techniques as the sole methods of fabricating EL structures, is both commercially and scientifically ill-advised. Considerable effort was spent in developing cheaper alternative techniques for thin film deposition. The main objectives of the contract can be summarized as follows: (1) to deposit high quality ZnS thin films by MOCVD, (2) to dope the ZnS thin film with Mn, (3) to deposit high quality dielectric films using a novel spray pyrolysis process, (4) to evaluate optimized insulator/ZnS-Mn/insulator structures, and (5) the fabrication of large area XY matrix ACEL structures.

  5. Thin film absorber for a solar collector

    DOEpatents

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  6. Carrier lifetimes in thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  7. Adhesive transfer of thin viscoelastic films.

    PubMed

    Shull, Kenneth R; Martin, Elizabeth F; Drzal, Peter L; Hersam, Mark C; Markowitz, Alison R; McSwain, Rachel L

    2005-01-01

    Micellar suspensions of acrylic diblock copolymers are excellent model materials for studying the adhesive transfer of viscoelastic solids. The micellar structure is maintained in films with a variety of thicknesses, giving films with a well-defined structure and viscoelastic character. Thin films were cast onto elastomeric silicone substrates from micellar suspensions in butanol, and the adhesive interactions between these coated elastomeric substrates and a rigid indenter were quantified. By controlling the adhesive properties of the film/indenter and film/substrate interfaces we were able to obtain very clean transfer of the film from the substrate to the portion of the glass indenter with which the film was in contact. Adhesive failure at the film/substrate interface occurs when the film/indenter interface is able to support an applied energy release rate that is sufficient to result in cavity nucleation at the film/substrate interface. Cavity formation is rapidly followed by delamination of the entire region under the indenter. The final stage in the transfer process involves the failure of the film that bridges the indenter and the elastomeric substrate. This film is remarkably robust and is extended to three times its original width prior to failure. Failure of this film occurs at the periphery of the indenter, giving a transferred film that conforms to the original contact area between the indenter and the coated substrate. PMID:15620300

  8. Method for making thin polypropylene film

    DOEpatents

    Behymer, R.D.; Scholten, J.A.

    1985-11-21

    An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

  9. Simulated Thin-Film Growth and Imaging

    NASA Astrophysics Data System (ADS)

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  10. Coalescence and percolation in thin metal films

    SciTech Connect

    Yu, X.; Duxbury, P.M.; Jeffers, G.; Dubson, M.A. Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824-1116 )

    1991-12-15

    Metals thermally evaporated onto warm insulating substrates evolve to the thin-film state via the morphological sequence: compact islands, elongated islands, percolation, hole filling, and finally the thin-film state. The coverage at which the metal percolates ({ital p}{sub {ital c}}) is often considerably higher than that predicted by percolation models, such as inverse swiss cheese or lattice percolation. Using a simple continuum model, we show that high-{ital p}{sub {ital c}}'s arise naturally in thin films that exhibit a crossover from full coalescence of islands at early stages of growth to partial coalescence at later stages. In this interrupted-coalescence model, full coalescence of islands occurs up to a critical island radius {ital R}{sub {ital c}}, after which islands overlap, but do not fully coalesce. We present the morphology of films and the critical area coverages generated by this model.

  11. Tungsten-doped thin film materials

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  12. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOEpatents

    Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  13. Niobium Thin Film Characterization for Thin Film Technology Used in Superconducting Radiofrequency Cavities

    NASA Astrophysics Data System (ADS)

    Dai, Yishu; Valente-Feliciano, Anne-Marie

    2015-10-01

    Superconducting RadioFrequency (SRF) penetrates about 40-100 nm of the top surface, making thin film technology possible in producing superconducting cavities. Thin film is based on the deposition of a thin Nb layer on top of a good thermal conducting material such as Al or Cu. Thin film allows for better control of the surface and has negligible response to the Earth's magnetic field, eliminating the need for magnetic shielding of the cavities. Thin film superconductivity depends heavily on coating process conditions, involving controllable parameters such as crystal plane orientation, coating temperature, and ion energy. MgO and Al2O3 substrates are used because they offer very smooth surfaces, ideal for studying film growth. Atomic Force Microscopy is used to characterize surface's morphology. It is evident that a lower nucleation energy and a long coating time increases the film quality in the r-plane sapphire crystal orientation. The quality of the film increases with thickness. Nb films coated on r-plane, grow along the (001) plane and yield a much higher RRR compared to the films grown on a- and c-planes. This information allows for further improvement on the research process for thin film technology used in superconducting cavities for the particle accelerators. National Science Foundation, Department of Energy, Jefferson Lab, Old Dominion University.

  14. Oxygen partial pressure influence on the character of InGaZnO thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    Lu, Yi; Wang, Li

    2012-11-01

    The amorphous oxide semiconductors (AOSs) are promising for emerging large-area optoelectronic applications because of capability of large-area, uniform deposition at low temperatures such as room temperature (RT). Indium-gallium-zinc oxide (InGaZnO) thin film is a promising amorphous semiconductors material in thin film transistors (TFT) for its excellent electrical properties. In our work, the InGaZnO thin films are fabricated on the SiO2 glass using pulsed laser deposition (PLD) in the oxygen partial pressure altered from 1 to 10 Pa at RT. The targets were prepared by mixing Ga2O3, In2O3, and ZnO powder at a mol ratio of 1: 7: 2 before the solid-state reactions in a tube furnace at the atmospheric pressure. The targets were irradiated by an Nd:YAG laser(355nm). Finally, we have three films of 270nm, 230nm, 190nm thick for 1Pa, 5Pa, 10Pa oxygen partial pressure. The product thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall-effect investigation. The comparative study demonstrated the character changes of the structure and electronic transport properties, which is probably occurred as a fact of the different oxygen partial pressure used in the PLD.

  15. Mirrorlike pulsed laser deposited tungsten thin film

    SciTech Connect

    Mostako, A. T. T.; Khare, Alika; Rao, C. V. S.

    2011-01-15

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10{sup -5} Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness {approx}782 nm.

  16. Mirrorlike pulsed laser deposited tungsten thin film.

    PubMed

    Mostako, A T T; Rao, C V S; Khare, Alika

    2011-01-01

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10(-5) Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness ∼782 nm. PMID:21280810

  17. Corrosion Behaviour of Sputtered Alumina Thin Films

    NASA Astrophysics Data System (ADS)

    Reddy, I. Neelakanta; Dey, Arjun; Sridhara, N.; Anoop, S.; Bera, Parthasarathi; Rani, R. Uma; Anandan, Chinnasamy; Sharma, Anand Kumar

    2015-10-01

    Corrosion studies of sputtered alumina thin films grown on stainless steel (SS) 304 were carried out by linear polarization and electrochemical impedance spectroscopy. Noticeable changes were not observed in morphology and surface roughness of films after carrying out the corrosion test. Corrosion current density (icorr) of alumina coated SS decreased up to 10-10 A cm-2 while icorr value in the range of 10-5-10-6 A cm-2 was observed for bare SS. The direct sputtered film showed superior corrosion resistance behaviour than the reactive sputtered film. This might be attributed to the difference in thickness of the films sputtered by direct and reactive methods. The electronic structure of deposited alumina films was studied both before and after corrosion test by X-ray photoelectron spectroscopy technique which also confirmed no structural changes of alumina film after exposing it to corrosive environment.

  18. A high performance thin film thermoelectric cooler

    SciTech Connect

    Rowe, D.M.; Min, G.; Volklein, F.

    1998-07-01

    Thin film thermoelectric devices with small dimensions have been fabricated using microelectronics technology and operated successfully in the Seebeck mode as sensors or generators. However, they do not operate successfully in the Peltier mode as coolers, because of the thermal bypass provided by the relatively thick substrate upon which the thermoelectric device is fabricated. In this paper a processing sequence is described which dramatically reduces this thermal bypass and facilitates the fabrication of high performance integrated thin film thermoelectric coolers. In the processing sequence a very thin amorphous SiC (or SiO{sub 2}SiN{sub 4}) film is deposited on a silicon substrate using conventional thin film deposition and a membrane formed by removing the silicon substrate over a desired region using chemical etching or micro-machining. Thermoelements are deposited on the membrane using conventional thin film deposition and patterning techniques and configured so that the region which is to be cooled is abutted to the cold junctions of the Peltier thermoelements while the hot junctions are located at the outer peripheral area which rests on the silicon substrate rim. Heat is pumped laterally from the cooled region to the silicon substrate rim and then dissipated vertically through it to an external heat sink. Theoretical calculations of the performance of a cooler described above indicate that a maximum temperature difference of about 40--50K can be achieved with a maximum heat pumping capacity of around 10 milliwatts.

  19. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-11-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 {Angstrom}), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 {Angstrom} of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.

  20. Thin film dielectric composite materials

    DOEpatents

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  1. Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor.

    PubMed

    Pham, Hien Thu; Yang, Jin Ho; Lee, Don-Sung; Lee, Byoung Hun; Jeong, Hyun-Dam

    2016-03-23

    Barium titanate nanocrystals (BT NCs) were prepared under solvothermal conditions at 200 °C for 24 h. The shape of the BT NCs was tuned from nanodot to nanocube upon changing the polarity of the alcohol solvent, varying the nanosize in the range of 14-22 nm. Oleic acid-passivated NCs showed good solubility in a nonpolar solvent. The effect of size and shape of the BT NCs on the ferroelectric properties was also studied. The maximum polarization value of 7.2 μC/cm(2) was obtained for the BT-5 NC thin film. Dielectric measurements of the films showed comparable dielectric constant values of BT NCs over 1-100 kHz without significant loss. Furthermore, the bottom gate In2O3 NC thin film transistors exhibited outstanding device performance with a field-effect mobility of 11.1 cm(2) V(-1) s(-1) at a low applied gate voltage with BT-5 NC/SiO2 as the gate dielectric. The low-density trapped state was observed at the interface between the In2O3 NC semiconductor and the BT-5 NCs/SiO2 dielectric film. Furthermore, compensation of the applied gate field by an electric dipole-induced dipole field within the BT-5 NC film was also observed. PMID:26927618

  2. Indium oxide (In2O3) nanoparticles induce progressive lung injury distinct from lung injuries by copper oxide (CuO) and nickel oxide (NiO) nanoparticles.

    PubMed

    Jeong, Jiyoung; Kim, Jeongeun; Seok, Seung Hyeok; Cho, Wan-Seob

    2016-04-01

    Indium is an essential element in the manufacture of liquid crystal displays and other electronic devices, and several forms of indium compounds have been developed, including nanopowders, films, nanowires, and indium metal complexes. Although there are several reports on lung injury caused by indium-containing compounds, the toxicity of nanoscale indium oxide (In2O3) particles has not been reported. Here, we compared lung injury induced by a single exposure to In2O3 nanoparticles (NPs) to that caused by benchmark high-toxicity nickel oxide (NiO) and copper oxide (CuO) NPs. In2O3 NPs at doses of 7.5, 30, and 90 cm(2)/rat (50, 200, and 600 µg/rat) were administered to 6-week-old female Wistar rats via pharyngeal aspiration, and lung inflammation was evaluated 1, 3, 14, and 28 days after treatment. Neutrophilic inflammation was observed on day 1 and worsened until day 28, and severe pulmonary alveolar proteinosis (PAP) was observed on post-aspiration days 14 and 28. In contrast, pharyngeal aspiration of NiO NPs showed severe neutrophilic inflammation on day 1 and lymphocytic inflammation with PAP on day 28. Pharyngeal aspiration of CuO NPs showed severe neutrophilic inflammation on day 1, but symptoms were completely resolved after 14 days and no PAP was observed. The dose of In2O3 NPs that produced progressive neutrophilic inflammation and PAP was much less than the doses of other toxic particles that produced this effect, including crystalline silica and NiO NPs. These results suggest that occupational exposure to In2O3 NPs can cause severe lung injury. PMID:25731971

  3. Crystallization of zirconia based thin films.

    PubMed

    Stender, D; Frison, R; Conder, K; Rupp, J L M; Scherrer, B; Martynczuk, J M; Gauckler, L J; Schneider, C W; Lippert, T; Wokaun, A

    2015-07-28

    The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C. PMID:26119755

  4. Capillary stress in microporous thin films

    SciTech Connect

    Samuel, J.; Hurd, A.J.; Frink, L.J.D.; Swol, F. van; Brinker, C.J. |; Raman, N.K.

    1996-06-01

    Development of capillary stress in porous xerogels, although ubiquitous, has not been systematically studied. The authors have used the beam bending technique to measure stress isotherms of microporous thin films prepared by a sol-gel route. The thin films were prepared on deformable silicon substrates which were then placed in a vacuum system. The automated measurement was carried out by monitoring the deflection of a laser reflected off the substrate while changing the overlying relative pressure of various solvents. The magnitude of the macroscopic bending stress was found to reach a value of 180 MPa at a relative pressure of methanol, P/Po = 0.001. The observed stress is determined by the pore size distribution and is an order of magnitude smaller in mesoporous thin films. Density Functional Theory (DFT) indicates that for the microporous materials, the stress at saturation is compressive and drops as the relative pressure is reduced.

  5. Vibration welding system with thin film sensor

    DOEpatents

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  6. Thin film ferroelectric electro-optic memory

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)

    1993-01-01

    An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.

  7. Mesoscale morphologies in polymer thin films.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  8. Thin Film Transistors On Plastic Substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  9. Method for synthesizing thin film electrodes

    DOEpatents

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  10. Toward High Performance Integrated Semiconductor Micro and Nano Lasers Enabled by Transparent Conducting Materials: from Thick Structure to Thin Film

    NASA Astrophysics Data System (ADS)

    Ou, Fang

    Integrated semiconductor lasers working at the wavelength around 1.3 microm and 1.55 microm are of great interest for the research of photonic integrated circuit (PIC) since they are the crucial components for optical communications and many other applications. To satisfy the requirement of the next generation optical communication and computing systems, integrated semiconductor lasers are expected to have high device performance like very low lasing threshold, high output powers, high speed and possibility of being integrated with electronics. This dissertation focuses on the design and realization of InP based high performance electrically pumped integrated semiconductor lasers. In the dissertation, we first design the tall structure based electrically pumped integrated micro-lasers. Those lasers are capable of giving >10 mW output power with a moderate low threshold current density (0.5--5 kA/cm 2). Besides, a new enhanced radiation loss based coupler design is demonstrated to realize single directional output for curvilinear cavities. Second, the thin film structure based integrated semiconductor laser designs are proposed. Both structures use the side conduction geometry to enable the electrical injection into the thin film laser cavity. The performance enhancement of the thin film structure based lasers is analyzed compared to the tall structure. Third, we investigate the TCO materials. CdO deposited by PLD and In 2O3 deposited by IAD are studied from aspects of their physical, optical and electrical properties. Those materials can give a wide range of tunability in their conductivity (1--5000 S/cm) and optical transparency (loss 200--5000 cm-1), which is of great interest in realizing novel nanophotonic devices. In addition, the electrical contact properties of those materials to InP are also studied. Experiment result shows that both CdO and In2O3 can achieve good ohmic contact to n-InP with contact resistance as low as 10-6O·cm 2. At last, we investigate

  11. Thermal (Kapitza) resistance of interfaces in compositional dependent ZnO-In2O3 superlattices

    NASA Astrophysics Data System (ADS)

    Liang, Xin; Baram, Mor; Clarke, David R.

    2013-06-01

    Compositionally dependent superlattices, In2O3(ZnO)k, form in the ZnO-rich portion of the ZnO-In2O3 phase diagram, decreasing thermal conductivity and altering both the electron conductivity and Seebeck coefficient over a wide range of composition and temperature. With increasing indium concentration, isolated point defects first form in ZnO and then superlattice structures with decreasing interface spacing evolve. By fitting the temperature and indium concentration dependence of the thermal conductivity to the Klemens-Callaway model, incorporating interface scattering and accounting for conductivity anisotropy, the Kapitza resistance due to the superlattice interfaces is found to be 5.0 ± 0.6 × 10-10 m2K/W. This finding suggests that selecting oxides with a compositionally dependent superlattice structure can be a viable approach, unaffected by grain growth, to maintaining low thermal conductivity at high temperatures.

  12. Reducing the In2O3(111) Surface Results in Ordered Indium Adatoms

    SciTech Connect

    Wagner, Margareta; Seiler, Steffen; Meyer, Bernd; Boatner, Lynn A; Schmid, M.; Diebold, U.

    2014-01-01

    The In2O3(111) surface can be transformed from an oxidized bulk termination to one that is covered by single In adatoms. As each adatom sits at one specific site within the surface unit cell they form a well-ordered (1 1) superstructure. Annealing at 500 C in O2 or in ultrahigh vacuum results in a fully reversible conversion between these two surface terminations; this transformation and intermediate stages were followed with Scanning Tunneling Microscopy (STM). Formation of this novel surface structure under reducing conditions is corroborated by Density Functional Theory (DFT). The reduced adatom-covered and the oxidized In2O3(111) surfaces are expected to exhibit different chemical and electronic properties, which can easily be exploited by the facile and reversible switching between the two terminations.

  13. Self catalytic growth of indium oxide (In2O3) nanowires by resistive thermal evaporation.

    PubMed

    Kumar, R Rakesh; Rao, K Narasimha; Rajanna, K; Phani, A R

    2014-07-01

    Self catalytic growth of Indium Oxide (In2O3) nanowires (NWs) have been grown by resistive thermal evaporation of Indium (In) in the presence of oxygen without use of any additional metal catalyst. Nanowires growth took place at low substrate temperature of 370-420 degrees C at an applied current of 180-200 A to the evaporation boat. Morphology, microstructures, and compositional studies of the grown nanowires were performed by employing field emission scanning electron microscopy (FESEM), X-Ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) respectively. Nanowires were uniformly grown over the entire Si substrate and each of the nanowire is capped with a catalyst particle at their end. X-ray diffraction study reveals the crystalline nature of the grown nanowires. Transmission electron microscopy study on the nanowires further confirmed the single crystalline nature of the nanowires. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirmed that Indium act as catalyst for In2O3 nanowires growth. A self catalytic Vapor-Liquid-Solid (VLS) growth mechanism was responsible for the growth of In2O3 nanowires. Effect of oxygen partial pressure variation and variation of applied currents to the evaporation boat on the nanowires growth was systematically studied. These studies concluded that at oxygen partial pressure in the range of 4 x 10(-4), 6 x 10(-4) mbar at applied currents to the evaporation boat of 180-200 A were the best conditions for good nanowires growth. Finally, we observed another mode of VLS growth along with the standard VLS growth mode for In2O3 nanowires similar to the growth mechanism reported for GaAs nanowires. PMID:24758054

  14. Thin film oxygen partial pressure sensor

    NASA Technical Reports Server (NTRS)

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  15. Solid-state thin-film supercapacitor with ruthenium oxide and solid electrolyte thin films

    NASA Astrophysics Data System (ADS)

    Yoon, Y. S.; Cho, W. I.; Lim, J. H.; Choi, D. J.

    Direct current reactive sputtering deposition of ruthenium oxide thin films (bottom and top electrodes) at 400°C are performed to produce a solid-state thin-film supercapacitor (TFSC). The supercapacitor has a cell structure of RuO 2/Li 2.94PO 2.37N 0.75 (Lipon)/RuO 2/Pt. Radio frequency, reactive sputtering deposition of an Li 2.94PO 2.37N 0.75 electrolyte film is performed on the bottom RuO 2 film at room temperature to separate the bottom and top RuO 2 electrodes electrically. The stoichiometry of the RuO 2 thin film is investigated by Rutherford back-scattering spectrometry (RBS). X-ray diffraction (XRD) shows that the as-deposited RuO 2 thin film is an amorphous phase. Scanning electron microscopy (SEM) measurements reveal that the RuO 2/Lipon/RuO 2 hetero-interfaces have no inter-diffusion problems. Charge-discharge measurements with constant current at room temperature clearly reveal typical supercapacitor behaviour for a RuO 2/Lipon/RuO 2/Pt cell structure. Since the electrolyte thin film has low ionic mobility, the capacity and cycle performance are inferior to those of a bulk type of supercapacitor. These results indicate that a high performance, TFSC can be fabricated by a solid electrolyte thin film with high ionic conductivity.

  16. Feasibility Study of Thin Film Thermocouple Piles

    NASA Technical Reports Server (NTRS)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  17. Borocarbide thin films and tunneling measurements.

    SciTech Connect

    Iavarone, M.; Andreone, A.; Cassinese, A.; Dicapual, R.; giannil, L.; Vagliol, R.; DeWilde, Y.; Crabtree, G. W.

    2000-06-15

    The results obtained by their group in thin film fabrication and STM tunneling on superconducting borocarbides YNi{sub 2}B{sub 2}C have been be briefly reviewed. Results concerning the microwave surface impedance and the S/N planar junctions on LuNi{sub 2}B{sub 2}C thin films have been also presented and analyzed. These new data unambiguously confirm the full BCS nature of the superconducting gap in borocarbides and the absence of significant pair-breaking effects in LuNi{sub 2}B{sub 2}C.

  18. Emittance Theory for Thin Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  19. TDPAC measurements in pure and Fe-doped In 2 O 3

    NASA Astrophysics Data System (ADS)

    Sena, C.; Costa, M. S.; Cabrera-Pasca, G. A.; Saxena, R. N.; Carbonari, A. W.

    2013-05-01

    Measurements of the electric quadrupole interactions were used to characterize pure and Fe-doped In2O3 samples using perturbed γ- γ angular correlation (PAC) technique with 111In-111Cd radioactive probe. The samples of pure as well as 1 % and 5 % Fe-doped In2O3 were prepared by sol-gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive x-ray spectroscopy (EDS). The PAC measurements were carried out with a conventional fast-slow coincidence set-up using four BaF2 detectors as a function of temperature from 295 K to 1073 K. The powder XRD spectra analyzed with Rietveld method as well as SEM and EDS results showed that Fe-doped samples are homogeneous without any secondary iron oxide phases. The PAC spectra of pure and 1 % Fe-doped In2O3 show well-known characteristic quadrupole frequencies for the two non-equivalent sites in the bixbyte structure. The hyperfine parameters in these cases change little with temperature. For the 5 % Fe-doped sample however the PAC spectra changed significantly and a third frequency with large η appears.

  20. Optical and vibrational properties of (ZnO)k In2O3 natural superlattice nanostructures

    NASA Astrophysics Data System (ADS)

    Margueron, Samuel; Pokorny, Jan; Skiadopoulou, Stella; Kamba, Stanislav; Liang, Xin; Clarke, David R.

    2016-05-01

    A thermodynamically stable series of superlattices, (ZnO)kIn2O3, form in the ZnO-In2O3 binary oxide system for InO1.5 concentrations from about 13 up to about 33 mole percent (m/o). These natural superlattices, which consist of a periodic stacking of single, two-dimensional sheets of InO6 octahedra, are found to give rise to systematic changes in the optical and vibrational properties of the superlattices. Low-frequency Raman scattering provides the evidence for the activation of acoustic phonons due to the folding of Brillouin zone. New vibrational modes at 520 and 620 cm-1, not present in either ZnO or In2O3, become Raman active. These new modes are attributed to collective plasmon oscillations localized at the two-dimensional InO1.5 sheets. Infrared reflectivity experiments, and simulations taking into account a negative dielectric susceptibility due to electron carriers in ZnO and interface modes of the dielectric layer of InO2, explain the occurrence of these new modes. We postulate that a localized electron gas forms at the ZnO/InO2 interface due to the electron band alignment and polarization effects. All our observations suggest that there are quantum contributions to the thermal and electrical conductivity in these natural superlattices.

  1. Hydrogen centers and the conductivity of In2O3 single crystals

    DOE PAGESBeta

    Yin, Weikai; Smithe, Kirby; Weiser, Philip; Stavola, Michael; Fowler, W. Beall; Boatner, Lynn A.; Pearton, Stephen J.; Hays, David C.; Koch, Sandro G.

    2015-02-24

    A series of infrared absorption experiments and complementary theory have been performed in order to determine the properties of OH and OD centers in In2O3 single crystals. Annealing In2O3 samples in H2 or D2 at temperatures near 450°C produces an n-type layer ≈0.06mm thick with an n-type doping of 1.6×1019 cm-3. The resulting free-carrier absorption is correlated with an OH center with a vibrational frequency of 3306 cm-1 that we associate with interstitial H+. Additional O-H (O-D) vibrational lines are assigned to metastable configurations of the interstitial H+(D+) center and complexes of H (D) with In vacancies. In addition, unlikemore » other oxides studied recently where H trapped at an oxygen vacancy is the dominant shallow donor (ZnO and SnO2, for example), interstitial H+ is found to be the dominant H-related shallow donor in In2O3.« less

  2. Field emission properties and growth mechanism of In2O3 nanostructures

    PubMed Central

    2014-01-01

    Four kinds of nanostructures, nanoneedles, nanohooks, nanorods, and nanotowers of In2O3, have been grown by the vapor transport process with Au catalysts or without any catalysts. The morphology and structure of the prepared nanostructures are determined on the basis of field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM). The growth direction of the In2O3 nanoneedles is along the [001], and those of the other three nanostructures are along the [100]. The growth mechanism of the nanoneedles is the vapor-liquid–solid (VLS), and those of the other three nanostructures are the vapor-solid (VS) processes. The field emission properties of four kinds of In2O3 nanostructures have been investigated. Among them, the nanoneedles have the best field emission properties with the lowest turn-on field of 4.9 V/μm and the threshold field of 12 V/μm due to possessing the smallest emitter tip radius and the weakest screening effect. PMID:24612921

  3. Field emission properties and growth mechanism of In2O3 nanostructures

    NASA Astrophysics Data System (ADS)

    Wang, Bing; Zheng, Zhaoqiang; Wu, Huanyu; Zhu, Lianfeng

    2014-03-01

    Four kinds of nanostructures, nanoneedles, nanohooks, nanorods, and nanotowers of In2O3, have been grown by the vapor transport process with Au catalysts or without any catalysts. The morphology and structure of the prepared nanostructures are determined on the basis of field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM). The growth direction of the In2O3 nanoneedles is along the [001], and those of the other three nanostructures are along the [100]. The growth mechanism of the nanoneedles is the vapor-liquid-solid (VLS), and those of the other three nanostructures are the vapor-solid (VS) processes. The field emission properties of four kinds of In2O3 nanostructures have been investigated. Among them, the nanoneedles have the best field emission properties with the lowest turn-on field of 4.9 V/μm and the threshold field of 12 V/μm due to possessing the smallest emitter tip radius and the weakest screening effect.

  4. Annealed CVD molybdenum thin film surface

    DOEpatents

    Carver, Gary E.; Seraphin, Bernhard O.

    1984-01-01

    Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

  5. Dynamics of liquid films and thin jets

    NASA Technical Reports Server (NTRS)

    Zak, M.

    1979-01-01

    The theory of liquid films and thin jets as one- and two-dimensional continuums is examined. The equations of motion have led to solutions for the characteristic speeds of wave propagation for the parameters characterizing the shape. The formal analogy with a compressible fluid indicates the possibility of shock wave generation in films and jets and the formal analogy to the theory of threads and membranes leads to the discovery of some new dynamic effects. The theory is illustrated by examples.

  6. Superconducting thin films on potassium tantalate substrates

    DOEpatents

    Feenstra, Roeland; Boatner, Lynn A.

    1992-01-01

    A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  7. Hydrogenated nanocrystalline silicon germanium thin films

    NASA Astrophysics Data System (ADS)

    Yusoff, A. R. M.; Syahrul, M. N.; Henkel, K.

    2007-08-01

    Hydrogenated nanocrystalline silicon germanium thin films (nc-SiGe:H) is an interesting alternative material to replace hydrogenated nanocrystalline silicon (nc-Si:H) as the narrow bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc-Si) triple-junction solar cell due to its higher optical absorption in the wavelength range of interest. In this paper, we present results of optical, structural investigations and electrical characterization of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HWCVD) with a coil-shaped tungsten filament and with a disilane/germane/hydrogen gas mixture. The optical band gaps of a-SiGe:H and nc-SiGe:H thin-films, which are deposited with the same disilane/germane/hydrogen gas mixture ratio of 3.4:1.7:7, are about 1.58 eV and 2.1 eV, respectively. The nc-SiGe:H thin film exhibits a larger optical absorption coefficient of about 2-4 in the 600-900 nm range when compared to nc-Si:H thin film. Therefore, a thinner nc-SiGe:H layer of sim500 nm thickness may be sufficient for the narrow bandgap absorber in an a-Si based multiple-junction solar cell. We enhanced the transport properties as measured by the photoconductivity frequency mixing technique. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.

  8. Oriented thin films of perylenetetracarboxylic diimide on frictiontransferred polymer films

    NASA Astrophysics Data System (ADS)

    Tanigaki, Nobutaka; Heck, Claire; Mizokuro, Toshiko

    Perylenetetracarboxylic diimide (PTCDI) is a promising material for application in organic electronics. In this study we report on the preparation of oriented thin films of PTCDI on the surface of oriented polymer substrates, which were prepared by friction transfer method. Two polymers, poly(tetrafluoroethylene) (PTFE) and poly(p-phenylene) (PPP) were used as the orienting substrate for PTCDI for comparison studies. Characterization by polarized UV-vis absorption shows that the orienting ability of PPP is larger than that of PTFE substrate. Furthermore, polarization-sensitive photoelectric conversion devices were fabricated by using the oriented PTCDI thin film on the PPP substrate.

  9. The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Raoufi, Davood; Taherniya, Atefeh

    2015-06-01

    In this work, Sn doping In2O3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300-800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap Eg for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

  10. Gas adsorption on microporous carbon thin films

    SciTech Connect

    O'Shea, S.; Pailthorpe, B.A.; Collins, R.E.; Furlong, D.N. )

    1992-05-01

    A gas adsorption study was performed on amorphous hydrogenated carbon thin films which are deposited by reactive magnetron sputtering using acetylene gas. It is found that the films are highly microporous. Annealing significantly increases the adsorption capacity of the films and decreases the effects of low-pressure hysteresis in the adsorption isotherms. The general gas adsorption behavior closely resembles that of powdered activated carbons. The Dubinin-Radushkevich equation can be used to model the submonolayer adsorption isotherm for a variety of gases. 38 refs., 9 figs., 3 tabs.

  11. Study of iron mononitride thin films

    SciTech Connect

    Tayal, Akhil Gupta, Mukul Phase, D. M. Reddy, V. R. Gupta, Ajay

    2014-04-24

    In this work we have studied the crystal structural and local ordering of iron and nitrogen in iron mononitride thin films prepared using dc magnetron sputtering at sputtering power of 100W and 500W. The films were sputtered using pure nitrogen to enhance the reactivity of nitrogen with iron. The x-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and soft x-ray absorption spectroscopy (SXAS) studies shows that the film crystallizes in ZnS-type crystal structure.

  12. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    SciTech Connect

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  13. Microstructural characterization in nanocrystalline ceramic thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hakkwan

    The primary objective of this research is to investigate the effects of process variables on microstructure in several fluoride and oxide thin films prepared by vapor deposition, in order to predict the properties and behaviors of nanocrystalline thin film materials. There are three distinct stages of this research. The first stage focuses on measuring of the porosity in polycrystalline thin films of a variety of fluorides as a function of the substrate temperature during deposition, and discussing the mechanism by which the porosity varies as a function of the process variables. We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF 2) and calcium fluoride (CaF2) using an atomic force microscope (AFM) and a quartz crystal thickness monitor. The porosity is very sensitive to the substrate temperature and decreases as the substrate temperature increases. Consistent behavior is observed among all of the materials in this study. The second stage is to understand the film microstructure including grain growth and texture development, because these factors are known to influence the behavior and stability of polycrystalline thin films. This study focuses on grain growth and texture development in polycrystalline lithium fluoride thin films using dark field (DF) transmission electron microscopy (TEM). It is demonstrated that we can isolate the size distribution of <111> surface normal grains from the overall size distribution, based on simple and plausible assumptions about the texture. The {111} texture formation and surface morphology were also observed by x-ray diffraction (XRD) and AFM, respectively. The grain size distributions become clearly bimodal as the annealing time increases, and we deduce that the short-time size distributions are also a sum of two overlapping peaks. The smaller grain-size peak in the distribution corresponds to the {111}-oriented grains which do not grow significantly, while

  14. Rim instability of bursting thin smectic films

    NASA Astrophysics Data System (ADS)

    Trittel, Torsten; John, Thomas; Tsuji, Kinko; Stannarius, Ralf

    2013-05-01

    The rupture of thin smectic bubbles is studied by means of high speed video imaging. Bubbles of centimeter diameter and film thicknesses in the nanometer range are pierced, and the instabilities of the moving rim around the opening hole are described. Scaling laws describe the relation between film thickness and features of the filamentation process of the rim. A flapping motion of the retracting smectic film is assumed as the origin of the observed filamentation instability. A comparison with similar phenomena in soap bubbles is made. The present experiments extend studies on soap films [H. Lhuissier and E. Villermaux, Phys. Rev. Lett. 103, 054501 (2009), 10.1103/PhysRevLett.103.054501] to much thinner, uniform films of thermotropic liquid crystals.

  15. Residual stress measurement in YBCO thin films.

    SciTech Connect

    Cheon, J. H.; Singh, J. P.

    2002-05-13

    Residual stress in YBCO films on Ag and Hastelloy C substrates was determined by using 3-D optical interferometry and laser scanning to measure the change in curvature radius before and after film deposition. The residual stress was obtained by appropriate analysis of curvature measurements. Consistent with residual thermal stress calculations based on the thermal expansion coefficient mismatch between the substrates and YBCO film, the measured residual stress in the YBCO film on Hastelloy C substrate was tensile, while it was compressive on the Ag substrate. The stress values measured by the two techniques were generally in good agreement, suggesting that optical interferometry and laser scanning have promise for measuring residual stresses in thin films.

  16. Thin film thermocouples for high temperature measurement

    NASA Astrophysics Data System (ADS)

    Kreider, Kenneth G.

    1989-05-01

    Thin film thermocouples have unique capabilities for measuring surface temperatures at high temperatures (above 800 K) under harsh conditions. Their low mass, approximately 2 x 10(-5) g/mm permits very rapid response and very little disturbance of heat transfer to the surface being measured. This has led to applications inside gas turbine engines and diesel engines measuring the surface temperature of first stage turbine blades and vanes and ceramic liners in diesel cylinders. The most successful high temperature (up to 1300 K) thin film thermocouples are sputter deposited from platinum and platinum-10 percent rhodium targets although results using base metal alloys, gold, and platinel will also be presented. The fabrication techniques used to form the thermocouples, approaches used to solve the high temperature insulation and adherence problems, current applications, and test results using the thin film thermocouples are reviewed. In addition a discussion will be presented on the current problems and future trends related to applications of thin film thermocouples at higher temperatures up to 1900 K.

  17. US polycrystalline thin film solar cells program

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L. )

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  18. New techniques for producing thin boron films

    SciTech Connect

    Thomas, G.E.

    1988-01-01

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs.

  19. Microwave-enhanced thin-film deposition

    NASA Technical Reports Server (NTRS)

    Chitre, S.

    1984-01-01

    The deposition of semiconducting and insulating thin films at low temperatures using microwave technology was explored. The method of plasma formations, selection of a power source, the design of the microwave plasma cavity, the microwave circuitry, impedance matching, plasma diagnostics, the deposition chamber and the vacuum system were studied.

  20. Semiconductor cooling by thin-film thermocouples

    NASA Technical Reports Server (NTRS)

    Tick, P. A.; Vilcans, J.

    1970-01-01

    Thin-film, metal alloy thermocouple junctions do not rectify, change circuit impedance only slightly, and require very little increase in space. Although they are less efficient cooling devices than semiconductor junctions, they may be applied to assist conventional cooling techniques for electronic devices.

  1. Refracting boundaries in thin film glass lightguides

    NASA Astrophysics Data System (ADS)

    Turner, A. F.; Browning, S. D.

    1980-02-01

    The paper describes experimental studies of refraction at a straightline boundary between evaporated glass lightguides and evaporated thin film overlays of SbO3 with index 2.10. Attention is given to sample preparation, measurement procedures, and computations. It is noted that Snell's law gives the total change of mode indices on each side of the boundary are used.

  2. US Polycrystalline Thin Film Solar Cells Program

    NASA Astrophysics Data System (ADS)

    Ullal, Harin S.; Zweibel, Kenneth; Mitchell, Richard L.

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R and D on copper indium diselenide and cadmium telluride thin films. The objective of the program is to support research to develop cells and modules that meet the U.S. Department of Energy's long-term goals by achieving high efficiencies (15 to 20 percent), low-cost ($50/m(sup 2)), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe2 and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The U.S. Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe2 and CdTe with subcontracts to start in spring 1990.

  3. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  4. Flexoelectricity in barium strontium titanate thin film

    SciTech Connect

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning; Shu, Longlong; Maria, Jon-Paul

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  5. UV absorption control of thin film growth

    DOEpatents

    Biefeld, Robert M.; Hebner, Gregory A.; Killeen, Kevin P.; Zuhoski, Steven P.

    1991-01-01

    A system for monitoring and controlling the rate of growth of thin films in an atmosphere of reactant gases measures the UV absorbance of the atmosphere and calculates the partial pressure of the gases. The flow of reactant gases is controlled in response to the partial pressure.

  6. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  7. Rechargeable Thin-film Lithium Batteries

    DOE R&D Accomplishments Database

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  8. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    SciTech Connect

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  9. Deuterium storage in nanocrystalline magnesium thin films

    NASA Astrophysics Data System (ADS)

    Checchetto, R.; Bazzanella, N.; Miotello, A.; Brusa, R. S.; Zecca, A.; Mengucci, A.

    2004-02-01

    Nanocrystalline magnesium deuteride thin films with the β-MgD2 structure were prepared by vacuum evaporation of hexagonal magnesium (h-Mg) samples and thermal annealing in 0.15 MPa D2 atmosphere at 373 K. Thermal desorption spectroscopy analysis indicated that the rate-limiting step in the deuterium desorption was given by the thermal decomposition of the deuteride phase. The activation energy Δg of the β-MgD2→h-Mg+D2 reaction scaled from 1.13±0.03 eV in 650-nm-thick films to 1.01±0.02 eV in 75-nm-thick films most likely as consequence of different stress and defect level. Positron annihilation spectroscopy analysis of the thin-film samples submitted to deuterium absorption and desorption cycles reveal the presence of a high concentration of void-like defects in the h-Mg layers after the very first decomposition of the β-MgD2 phase, the presence of these open volume defects reduces the D2 absorption capacity of the h-Mg thin film.

  10. Estimation of Chemical States and Carrier Density of Sn-doped In2O3 (ITO) by Mössbauer Spectrometry

    NASA Astrophysics Data System (ADS)

    Yamada, N.; Shigesato, Y.; Yasui, I.; Li, H.; Ujihira, Y.; Nomura, K.

    1998-12-01

    Chemical states of Sn in Sn-doped In2O3 (ITO) powders and films were studied by Mössbauer spectrometry. From the deconvolution analysis of the spectra it was found that there were 7- and 8-fold coordinated, electrically inactive Sn4+ species in the host lattice in addition to two electrically active Sn4+ species. The concentration of the electrically inactive dopants and the carrier densities could be estimated by Mössbauer spectra. The estimated carrier densities for the powders and films were in good agreement with the measured values.

  11. MISSE 5 Thin Films Space Exposure Experiment

    NASA Technical Reports Server (NTRS)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  12. Hematite thin films: growth and characterization

    NASA Astrophysics Data System (ADS)

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Giratá, D.; Morales, A. L.; Devia, A.; Gómez, M. E.; Ramirez, J. G.; Gancedo, J. R.

    2006-04-01

    We have grown hematite (α Fe 2 O 3) thin films on stainless steel and (001)-silicon single-crystal substrates by RF magnetron sputtering process in argon atmosphere at substrate temperatures from 400 to 800°C. Conversion Electron Mössbauer (CEM) spectra of the sample grown on stainless steel at 400°C exhibit values for hyperfine parameter characteristic of bulk hematite phase in the weak ferromagnetic state. Also, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The X-ray diffraction (XRD) pattern of the polycrystalline thin film grown on steel substrates also corresponds to α Fe 2 O 3. The samples were also analyzed by Atomic Force Microscopy (AFM), those grown on stainless steel reveal a morphology consisting of columnar grains with random orientation, given the inhomogeneity of the substrate surface.

  13. Hematite thin films: growth and characterization

    NASA Astrophysics Data System (ADS)

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Giratá, D.; Morales, A. L.; Devia, A.; Gómez, M. E.; Ramirez, J. G.; Gancedo, J. R.

    We have grown hematite (α - Fe 2 O 3) thin films on stainless steel and (001)-silicon single-crystal substrates by RF magnetron sputtering process in argon atmosphere at substrate temperatures from 400 to 800°C. Conversion Electron Mössbauer (CEM) spectra of the sample grown on stainless steel at 400°C exhibit values for hyperfine parameter characteristic of bulk hematite phase in the weak ferromagnetic state. Also, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The X-ray diffraction (XRD) pattern of the polycrystalline thin film grown on steel substrates also corresponds to α - Fe 2O3. The samples were also analyzed by Atomic Force Microscopy (AFM), those grown on stainless steel reveal a morphology consisting of columnar grains with random orientation, given the inhomogeneity of the substrate surface.

  14. A Single Eu-Doped In2O3 Nanobelt Device for Selective H2S Detection

    PubMed Central

    Chen, Weiwu; Liu, Yingkai; Qin, Zhaojun; Wu, Yuemei; Li, Shuanghui; Ai, Peng

    2015-01-01

    Eu-doped In2O3 nanobelts (Eu-In2O3 NBs) and pure In2O3 nanobelts (In2O3 NBs) are synthesized by the carbon thermal reduction method. Single nanobelt sensors are fabricated via an ion beam deposition system with a mesh-grid mask. The gas-sensing response properties of the Eu-In2O3 NB device and its undoped counterpart are investigated with several kinds of gases (including H2S, CO, NO2, HCHO, and C2H5OH) at different concentrations and different temperatures. It is found that the response of the Eu-In2O3 NB device to 100 ppm of H2S is the best among these gases and the sensitivity reaches 5.74, which is five times that of pure In2O3 NB at 260 °C. We also found that the former has an excellent sensitive response and great selectivity to H2S compared to the latter. Besides, there is a linear relationship between the response and H2S concentration when its concentration changes from 5 to 100 ppm and from 100 to 1000 ppm. The response/recovery time is quite short and remains stable with an increase of H2S concentration. These results mean that the doping of Eu can improve the gas-sensing performance of In2O3 NB effectually. PMID:26633404

  15. The fabrication of In2O3/In2S3/Ag nanocubes for efficient photoelectrochemical water splitting.

    PubMed

    Xu, Rui; Li, Haohua; Zhang, Wenwen; Yang, Zepeng; Liu, Guiwu; Xu, Ziwei; Shao, Haicheng; Qiao, Guanjun

    2016-01-28

    In this work, for the first time, a three-component In2O3/In2S3/Ag nanocomposite heterostructured photoanode is prepared on a F-doped SnO2 (FTO) glass substrate. The three-component photoanode exhibits significantly enhanced photoelectrochemical properties compared with the single-component (In2O3) and two-component (In2O3/In2S3 or In2O3/Ag) systems. Ag nanoparticles deposited on the surface of In2O3/In2S3 nanocubes can facilitate the separation of photogenerated charge carriers and enhance the absorption of visible light. In I-V curves, the In2O3/In2S3/Ag photoanode generates a remarkable photocurrent density of 8.75 mA cm(-2) (at 0 V vs. SCE), which is higher than those of the two-component In2O3/In2S3 (4.47 mA cm(-2)) and In2O3/Ag (3.50 mA cm(-2)). Furthermore, it also gives efficiency as high as 67% around 350 nm in the incident photon to electron conversion efficiency (IPCE) spectrum. These results open up a promising avenue for the design and fabrication of novel heterojunctions for photoelectrochemical water splitting. PMID:26725370

  16. Fabrication of In2O3@In2S3 core-shell nanocubes for enhanced photoelectrochemical performance

    NASA Astrophysics Data System (ADS)

    Li, Haohua; Chen, Cong; Huang, Xinyou; Leng, Yang; Hou, Mengnan; Xiao, Xiaogu; Bao, Jie; You, Jiali; Zhang, Wenwen; Wang, Yukun; Song, Juan; Wang, Yaping; Liu, Qinqin; Hope, Gregory A.

    2014-02-01

    Herein, we report the facile synthesis of In2O3@In2S3 core-shell nanocubes and their improved photoelectrochemical property. In2O3@In2S3 core-shell nanocubes are grown on a F-doped SnO2 (FTO) glass substrate by a two-step process, which involves the electrodeposition of In2O3 nanocubes and a subsequent ion-exchange treatment. The improved light-harvesting ability and the suitable band alignment of the In2O3@In2S3 core-shell nanocubes generate a remarkable photocurrent density of 6.19 mA cm-2 (at 0 V vs. Ag/AgCl), which is substantially higher than the pristine In2O3 nanocubes. These results provide a new insight into the design of a high-performance photoanode for photoelectrochemical water splitting.

  17. A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements

    SciTech Connect

    Arnalds, U. B.; Agustsson, J. S.; Ingason, A. S.; Eriksson, A. K.; Gylfason, K. B.; Gudmundsson, J. T.; Olafsson, S.

    2007-10-15

    We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks.

  18. A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements.

    PubMed

    Arnalds, U B; Agustsson, J S; Ingason, A S; Eriksson, A K; Gylfason, K B; Gudmundsson, J T; Olafsson, S

    2007-10-01

    We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks. PMID:17979429

  19. Thin blend films of cellulose and polyacrylonitrile

    NASA Astrophysics Data System (ADS)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  20. Electrochromism in oxyfluoride thin films

    SciTech Connect

    Azens, A.; Gutarra, A.; Stjerna, B.; Granqvist, C.G.; Gabrusenoks, J.; Lusis, A.

    1994-12-31

    Oxyfluoride films based on W and Ti were prepared by reactive sputtering in plasmas containing O{sub 2} + CF{sub 4}. The deposition rate was large, particularly when chemical sputtering was promoted by heating the target. The films could show large charge insertion/extraction, high coloration efficiency, and good cycling durability. Electrochromic devices have several potential and practical applications in contemporary technology. Among the foremost of these one notes smart windows with variable throughput of radiant energy, anti-dazzling rear-view mirrors for cars and trucks, elements for non-emissive information display, and surfaces for variable thermal emittance. Smart windows technology, that is presently emerging, may have a pervasive and benign influence on building design and management.

  1. Synthesis and characterization of transparent conducting indium iron oxide bulk and thin film materials

    NASA Astrophysics Data System (ADS)

    Fahed, Charbel T.

    2009-12-01

    In this dissertation, solid solutions of indium-iron oxide (In2-xFexO3) with varying compositions were prepared and a new ultra-fast microwave method was used for deposition of thin films of this material. Non-destructive characterization methods were used for studying these transparent conducting oxide (TCO) materials. In this work, the linear thermal expansion coefficients of bulk In 2-xFexO3 have been determined using high resolution x-ray diffraction measurements. The addition of Fe2O3 to In2O3 resulted in the formation of solid solutions in body centered cubic phase. The thermal expansion coefficients for solid solutions of In2-xFexO3 showed increased values in comparison to that of pure In2O3 phase. The study of thermal properties of these TCO materials is crucial for their potential applications in photovoltaic and spintronic devices operating at various temperatures. In addition, the bulk samples of In2-xFexO 3 were studied for their structural, transport, and magnetic properties, as a function of composition. The lattice parameters of the solid solutions decrease with increasing Fe-content. The four-probe electrical measurements showed reduced conductivities for higher Fe compositions. The magnetic data displayed ferromagnetism in these solid solutions, and that can be attributed to the presence of trace amounts of Fe2O3 or Fe 3O4. These results might be important for the use of TCOs in spintronic applications as well as structural materials such as ceramic coatings intended to withstand harsh environments. Thin films of Indium-iron oxide compositions were deposited by using ultra-fast microwave heating. This is a new method of deposition of TCOs that has never been done before. The advantage of microwave heating deposition over other deposition techniques is that it is extremely fast and can be used for materials of high evaporation temperature. In this work, the deposition was done in 50-120 seconds at 1950-2000°C. Characteristics of these transparent

  2. Borides in Thin Film Technology

    NASA Astrophysics Data System (ADS)

    Mitterer, Christian

    1997-10-01

    The borides of transition and rare-earth metals are considered for application as wear- and corrosion-resistant, decorative or thermionic coatings. After a review of physical vapor deposition (PVD) techniques used for the deposition of these coatings, a survey of investigations to apply these coatings is given. As a result of the strong directionality of covalent boron-boron bonds, boride coatings show an increasing tendency to amorphous film growth with increasing B/Meatomic ratio and, for rare-earth hexaborides, with decreasing metallic radius of the rare-earth metal. Mechanical and optical properties are strongly influenced by the crystallographic structure of the boride phase. Because of their high hardness combined with good adhesion, crystalline films based on the diborides of transition metals seem to be promising candidates for wear resistant coatings on cutting tools. Alloying of these films with nitrogen by reactive PVD processes results in the formation of extremely fine-grained multiphase hard coatings with excellent tribological and corrosion behavior, thus offering new applications in the coating of engineering components. Because of their distinct colorations, some of the hexaborides of rare-earth elements may be used as decorative coatings on consumer products like wristwatch casings or eyeglass frames. Another promising field is the development of thermionic coatings based on rare-earth hexaborides, which may offer the possibility of the production of inexpensive and simple high emission filaments.

  3. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  4. Thin film phase transition materials development program

    NASA Astrophysics Data System (ADS)

    Case, W. E.

    1985-04-01

    A number of application concepts have emerged based on the idea that a phase transition thin film such as vanadium dioxide provides a high resolution, two-dimensional format for switching, recording, and processing optical signals. These applications range from high density optical disk recording systems and optical data processing to laser protection devices, infrared FLIRS and seekers, laser radar systems and IR scene simulators. All application candidates have a potential for providing either a totally new capability, an improved performance, a lower cost, or combinations of the three. Probably of greatest significance is the emergence of agile sensor concepts arising out of some of the film's special properties. These are represented by the above FLIRs, seekers and laser radar systems. A three year research program has been completed to advance the state-of-the-art in the preparation and characterization of selected thin film phase transition materials. The objectives of the program were: (1) to expand the data base and improve operational characteristics of Vought prepared vanadium dioxide thin films, (2) to evolve process chemistry and subsequently characterize several new program materials, including rare-earth chalcogenides, organic semiconductor charge complexes, alloys of transition metal oxides, and metal-insulator cermets, and (3) to spin-off new applications and concepts.

  5. Polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  6. Thin-film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  7. Thin-film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    1986-09-01

    This is the final technical progress report of a research program entitled Thin-Film Cadmium Telluride Solar Cells. The major objective was to demonstrate chemical vapor deposition (CVD)-grown CdTe devices with a photovoltaic efficiency of at least 10%. The work included: (1) CVD and characterization of p-CdTe films of controlled resistivity; (2) deposition and characterization of heterojunction partners; (3) surface passivation of CdTe; and (4) preparation and characterization of thin-film solar cells. The CVD of p-CdTe was optimized with emphasis on resistivity control through nonstoichiometry and extrinsic doping. Both carbon and oxygen were identified as acceptors. The use of thermal oxidation for surface passivation of CdTe was investigated using capacitance-voltage measurement. Device-quality thermal oxide can be prepared by hydrogen annealing of CdTe before oxidation. Deposition and characterization of CdS, CdO, and ZnO:In were also carried out. The best thin-film cell to date had a conversion efficiency near 9%.

  8. Deformation behavior of metallic glass thin films

    NASA Astrophysics Data System (ADS)

    Liu, Y. H.; Zhao, F.; Li, Y. L.; Chen, M. W.

    2012-09-01

    We report room-temperature deformation behavior of damage-free metallic glass films characterized by nanoindentation and atomic force microscopy. The glass films with thicknesses ranging from 5 μm down to ˜60 nm plastically deform by shear bands when subjected to both spherical and sharp Berkovich indenters. Importantly, we found that gallium contamination from focus ion beam (FIB) milling significantly suppresses shear band formation, indicating that the absence of shear bands in FIB milled samples may be caused by gallium irradiation damage, rather than sample size effect. Finite element simulation reveals that a high stress gradient at the film/substrate interface promotes the plastic deformation of the thin films but does not give rise to significant strain inhomogeneity.

  9. Dynamics of polymer thin films and surfaces

    NASA Astrophysics Data System (ADS)

    Fakhraai, Zahra

    2007-12-01

    The dynamics of thin polymer films display many differences from the bulk dynamics. Different modes of motions in polymers are affected by confinement in different ways. The enhancement in the dynamics of some modes of motion can cause anomalies in the glass transition temperature (Tg) of thin films, while other modes of motion such as diffusion can be substantially slowed down due to the confinement effects. In this thesis, different modes of dynamics are probed using different techniques. The interface healing of two identical polymer surfaces is used as a probe of segmental motion in the direction normal to the plane of the films and it is shown that this mode of motion is slowed down at temperatures above bulk glass transition, while the glass transition itself is decreased indicating that the type of motion responsible for the glass transition is enhanced. The glass transition measurements at different cooling rates indicate that this enhancement only happens at temperatures close to or below bulk glass transition temperature and it is not expected to be detected at higher temperatures where the system is in the melt state. It is shown that the sample preparation technique is not a factor in observing this enhanced dynamics, while the existence of the free surface can be important in observed reductions in the glass transition temperature. The dynamics near the free surface is further studied using a novel nano-deformation technique, and it is shown that the dynamics near the free surface is in fact enhanced compared to the bulk dynamics and this enhancement is increased as the temperature is decreased further below Tg. It is also shown that this mode of relaxation is much different from the bulk modes of relaxations, and a direct relationship between this enhanced motion and Tg reduction in thin films can be established. The results presented in this thesis can lead to a possible universal picture that can resolve the behavior of different modes of motions in

  10. Thin Film...Large Payoff

    NASA Technical Reports Server (NTRS)

    1998-01-01

    SRS Technologies is currently the only company licensed by Langley Research Center to produce colorless polyimides. They currently produce two polyimides, the LaRC-CP1 and LaRC-CP2 developed by Langley Research Center. These polyimides offer many advantages over other commercially available materials including excellent thermal stability, radiation resistance, solubility, and transparency. The SRS polyimides can be used in laminates, films, molded parts, and stock shapes. The polyimide technology has also helped the company further their development of solar arrays.

  11. Temperature dependence of LRE-HRE-TM thin films

    NASA Astrophysics Data System (ADS)

    Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

    2003-04-01

    Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

  12. A close correlation between induced ferromagnetism and oxygen deficiency in Fe doped In 2O 3

    NASA Astrophysics Data System (ADS)

    Singhal, R. K.; Samariya, A.; Kumar, Sudhish; Sharma, S. C.; Xing, Y. T.; Deshpande, U. P.; Shripathi, T.; Saitovitch, E.

    2010-11-01

    We report on the reversible manipulation of room temperature ferromagnetism in Fe (5%) doped In 2O 3 polycrystalline magnetic semiconductor. The X-ray diffraction and photoemission measurements confirm that the Fe ions are well incorporated into the lattice, substituting the In 3+ ions. The magnetization measurements show that the host In 2O 3 has a diamagnetic ground state, while it shows weak ferromagnetism at 300 K upon Fe doping. The as-prepared sample was then sequentially annealed in hydrogen, air, vacuum and finally in air. The ferromagnetic signal shoots up by hydrogenation as well as vacuum annealing and bounces back upon re-annealing the samples in air. The sequence of ferromagnetism shows a close inter-relationship with the behavior of oxygen vacancies ( Vo). The Fe ions tend to a transform from 3+ to 2+ state during the giant ferromagnetic induction, as revealed by photoemission spectroscopy. A careful characterization of the structure, purity, magnetic, and transport properties confirms that the ferromagnetism is due to neither impurities nor clusters but directly related to the oxygen vacancies. The ferromagnetism can be reversibly controlled by these vacancies while a parallel variation of carrier concentration, as revealed by resistance measurements, appears to be a side effect of the oxygen vacancy variation.

  13. Enhanced absorption in tandem solar cells by applying hydrogenated In2O3 as electrode

    NASA Astrophysics Data System (ADS)

    Yin, Guanchao; Steigert, Alexander; Manley, Phillip; Klenk, Reiner; Schmid, Martina

    2015-11-01

    To realize the high efficiency potential of perovskite/chalcopyrite tandem solar cells in modules, hydrogenated In2O3 (IO:H) as electrode is investigated. IO:H with an electron mobility of 100 cm2 V-1 s-1 is demonstrated. Compared to the conventional Sn doped In2O3 (ITO), IO:H exhibits a decreased electron concentration and leads to almost no sub-bandgap absorption up to the wavelength of 1200 nm. Without a trade-off between transparency and lateral resistance in the IO:H electrode, the tandem cell keeps increasing in efficiency as the IO:H thickness increases and efficiencies above 22% are calculated. In contrast, the cells with ITO as electrode perform much worse due to the severe parasitic absorption in ITO. This indicates that IO:H has the potential to lead to high efficiencies, which is otherwise constrained by the parasitic absorption in conventional transparent conductive oxide electrode for tandem solar cells in modules.

  14. Thermal conductivities of thin, sputtered optical films

    SciTech Connect

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO{sub 2}/Si{sub 3}N{sub 4}){sup n} and Al(Al{sub 2}O{sub 3}/AIN){sup n}. Sputtered films of more conventional materials like SiO{sub 2}, Al{sub 2}O{sub 3}, Ta{sub 2}O{sub 5}, Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented.

  15. Electrohydrodynamic instabilities in thin liquid trilayer films

    SciTech Connect

    Roberts, Scott A.; Kumar, Satish

    2010-12-09

    Experiments by Dickey and Leach show that novel pillar shapes can be generated from electrohydrodynamic instabilities at the interfaces of thin polymer/polymer/air trilayer films. In this paper, we use linear stability analysis to investigate the effect of free charge and ac electric fields on the stability of trilayer systems. Our work is also motivated by our recent theoretical study which demonstrates how ac electric fields can be used to increase control over the pillar formation process in thin liquid bilayer films. For perfect dielectric films, the effect of an AC electric field can be understood by considering an equivalent DC field. Leaky dielectric films yield pillar configurations that are drastically different from perfect dielectric films, and AC fields can be used to control the location of free charge within the trilayer system. This can alter the pillar instability modes and generate smaller diameter pillars when conductivities are mismatched. The results presented may be of interest for the creation of complex topographical patterns on polymer coatings and in microelectronics.

  16. Electrohydrodynamic instabilities in thin liquid trilayer films

    DOE PAGESBeta

    Roberts, Scott A.; Kumar, Satish

    2010-12-09

    Experiments by Dickey and Leach show that novel pillar shapes can be generated from electrohydrodynamic instabilities at the interfaces of thin polymer/polymer/air trilayer films. In this paper, we use linear stability analysis to investigate the effect of free charge and ac electric fields on the stability of trilayer systems. Our work is also motivated by our recent theoretical study which demonstrates how ac electric fields can be used to increase control over the pillar formation process in thin liquid bilayer films. For perfect dielectric films, the effect of an AC electric field can be understood by considering an equivalent DCmore » field. Leaky dielectric films yield pillar configurations that are drastically different from perfect dielectric films, and AC fields can be used to control the location of free charge within the trilayer system. This can alter the pillar instability modes and generate smaller diameter pillars when conductivities are mismatched. The results presented may be of interest for the creation of complex topographical patterns on polymer coatings and in microelectronics.« less

  17. Nonlinear viscoelastic characterization of thin polyethylene film

    NASA Technical Reports Server (NTRS)

    Wilbeck, J. S.

    1981-01-01

    In order to understand the state of stress and strain in a typical balloon fabricated from thin polyethylene film, experiment data in the literature reviewed. It was determined that the film behaves as a nonlinear viscoelasticity material and should be characterized accordingly. A simple uniaxial, nonlinear viscoelastic model was developed for predicting stress given a certain strain history. The simple model showed good qualitative agreement with results of constant rate, uniaxial accurately predicting stresses for cyclic strain histories typical of balloon flights. A program was outlined which will result in the development of a more complex nonlinear viscoelastic model.

  18. Electrochromism in copper oxide thin films

    SciTech Connect

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  19. Thin film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  20. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  1. Study of microstructure and electroluminescence of zinc sulfide thin film

    NASA Astrophysics Data System (ADS)

    Zhao-hong, Liu; Yu-jiang, Wang; Mou-zhi, Chen; Zhen-xiang, Chen; Shu-nong, Sun; Mei-chun, Huang

    1998-03-01

    The electroluminscent zinc sulfide thin film doped with erbium, fabricated by thermal evaporation with two boats, are examined. The surface and internal electronic states of ZnS thin film are measured by means of x-ray diffraction and x-ray photoemission spectroscopy. The information on the relations between electroluminescent characteristics and internal electronic states of the film is obtained. And the effects of the microstructure of thin film doped with rare earth erbium on electroluminescence are discussed as well.

  2. Domain switching of fatigued ferroelectric thin films

    SciTech Connect

    Tak Lim, Yun; Yeog Son, Jong E-mail: hoponpop@ulsan.ac.kr; Shin, Young-Han E-mail: hoponpop@ulsan.ac.kr

    2014-05-12

    We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  3. Techniques for Connecting Superconducting Thin Films

    NASA Technical Reports Server (NTRS)

    Mester, John; Gwo, Dz-Hung

    2006-01-01

    Several improved techniques for connecting superconducting thin films on substrates have been developed. The techniques afford some versatility for tailoring the electronic and mechanical characteristics of junctions between superconductors in experimental electronic devices. The techniques are particularly useful for making superconducting or alternatively normally conductive junctions (e.g., Josephson junctions) between patterned superconducting thin films in order to exploit electron quantum-tunneling effects. The techniques are applicable to both low-Tc and high-Tc superconductors (where Tc represents the superconducting- transition temperature of a given material), offering different advantages for each. Most low-Tc superconductors are metallic, and heretofore, connections among them have been made by spot welding. Most high-Tc superconductors are nonmetallic and cannot be spot welded. These techniques offer alternatives to spot welding of most low-Tc superconductors and additional solutions to problems of connecting most high-Tc superconductors.

  4. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  5. Nanoporous piezo- and ferroelectric thin films.

    PubMed

    Ferreira, Paula; Hou, Ru Z; Wu, Aiying; Willinger, Marc-Georg; Vilarinho, Paula M; Mosa, Jadra; Laberty-Robert, Christel; Boissière, Cédric; Grosso, David; Sanchez, Clément

    2012-02-01

    Nanoporous barium titanate and lead titanate thin films (∼100 nm calculated from ellipsometric data) are prepared starting from sol-gel solutions modified with a commercially available block-copolymer and evaporation-induced self-assembly methodology. The tuning of the thermal treatment followed by in situ ellipsometry allows the decomposition of the organic components and of the structuring agent leading to the formation of porous tetragonal crystalline perovskite structures as observed by XRD, HRTEM, SEM, and ellipsoporosimetry. Both nanoporous barium titanate and lead titanate thin films present local piezoelectric and ferroelectric behavior measured by piezoresponse force microscopy (PFM), being promising platforms for the preparation of the generation of new multifunctional systems. PMID:22206407

  6. Thin film strain gage development program

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.; Anderson, W. L.; Claing, R. G.

    1983-01-01

    Sputtered thin-film dynamic strain gages of 2 millimeter (0.08 in) gage length and 10 micrometer (0.0004 in) thickness were fabricated on turbojet engine blades and tested in a simulated compressor environment. Four designs were developed, two for service to 600 K (600 F) and two for service to 900 K (1200 F). The program included a detailed study of guidelines for formulating strain-gage alloys to achieve superior dynamic and static gage performance. The tests included gage factor, fatigue, temperature cycling, spin to 100,000 G, and erosion. Since the installations are 30 times thinner than conventional wire strain gage installations, and any alteration of the aerodynamic, thermal, or structural performance of the blade is correspondingly reduced, dynamic strain measurement accuracy higher than that attained with conventional gages is expected. The low profile and good adherence of the thin film elements is expected to result in improved durability over conventional gage elements in engine tests.

  7. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  8. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  9. Substrate heater for thin film deposition

    DOEpatents

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  10. Superconducting thin films on potassium tantalate substrates

    SciTech Connect

    Feenstra, R.; Boatner, L.A.

    1992-05-05

    This patent describes a composition for the lossless transmission of electrical current, it comprises: a superconducting thin film epitaxially deposited on a oriented surface of a single crystal KTa{sub 1{minus}z}Nb{sub 2}O{sub 3} substrate, where z is 0 to 1, wherein the superconducting thin film is selected from the group consisting of YBa{sub 2{minus}}Cu{sub 3}O{sub 7}, Y{sub 2}Ba{sub 4}Cu{sub 8}O{sub 20}, a compound wherein a trivalent rare earth element replaces yttrium in compound YBa{sub 2}Cu{sub 3}O{sub 7}, and a compound wherein scandium replaces yttrium in the compound YBa{sub 2}Cu{sub 3}O{sub 7}.

  11. Radiation effects on thin film solar cells

    SciTech Connect

    Gay, C.F.; Anspaugh, B.E.; Potter, R.R.; Tanner, D.P.

    1984-05-01

    A study has been undertaken to assess the effects of 1 MeV electron radiation on two types of thin film solar cells, thin-film silicon:hydrogen alloy (TFS) and copper indium diselenide (CIS). Using TFS devices with efficiencies between 8-9% AM 0 (9-10% AM 1.5), and CIS devices with efficiencies between 7-8% AM 0 (8-9% AM 1.5), the results show the devices are more stable to electron radiation than the typical crystalline silicon aerospace cells. In fact the CIS showed no degradation at all and with low temperature annealing the TFS could be restored to within 97% of initial power output.

  12. Generalized Ellipsometry on Ferromagnetic Sculptured Thin Films.

    NASA Astrophysics Data System (ADS)

    Schmidt, Daniel; Hofmann, Tino; Mok, Kah; Schmidt, Heidemarie; Skomski, Ralf; Schubert, Eva; Schubert, Mathias

    2011-03-01

    We present and discuss generalized ellipsometry and generalized vector-magneto-optic ellipsometry investigations on cobalt nanostructured thin films with slanted, highly-spatially coherent, columnar arrangement. The samples were prepared by glancing angle deposition. The thin films are highly transparent and reveal strong form-induced birefringence. We observe giant Kerr rotation in the visible spectral region, tunable by choice of the nanostructure geometry. Spatial magnetization orientation hysteresis and magnetization magnitude hysteresis properties are studied using a 3-dimensional Helmholtz coil arrangement allowing for arbitrary magnetic field direction at the sample position for field strengths up to 0.4 Tesla. Analysis of data obtained within this novel vector-magneto-optic setup reveals magnetization anisotropy of the Co slanted nanocolumns supported by mean-field theory modeling.

  13. Electrostatic Discharge Effects on Thin Film Resistors

    NASA Technical Reports Server (NTRS)

    Sampson, Michael J.; Hull, Scott M.

    1999-01-01

    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  14. Thin film photovoltaic panel and method

    DOEpatents

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  15. Silver nanowire composite thin films as transparent electrodes for Cu(In,Ga)Se₂/ZnS thin film solar cells.

    PubMed

    Tan, Xiao-Hui; Chen, Yu; Liu, Ye-Xiang

    2014-05-20

    Solution processed silver nanowire indium-tin oxide nanoparticle (AgNW-ITONP) composite thin films were successfully applied as the transparent electrodes for Cu(In,Ga)Se₂ (CIGS) thin film solar cells with ZnS buffer layers. Properties of the AgNW-ITONP thin film and its effects on performance of CIGS/ZnS thin film solar cells were studied. Compared with the traditional sputtered ITO electrodes, the AgNW-ITONP thin films show comparable optical transmittance and electrical conductivity. Furthermore, the AgNW-ITONP thin film causes no physical damage to the adjacent surface layer and does not need high temperature annealing, which makes it very suitable to use as transparent conductive layers for heat or sputtering damage-sensitive optoelectronic devices. By using AgNW-ITONP electrodes, the required thickness of the ZnS buffer layers for CIGS thin film solar cells was greatly decreased. PMID:24922214

  16. Thin-film optical shutter. Final report

    SciTech Connect

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  17. Large-area thin-film modules

    NASA Technical Reports Server (NTRS)

    Tyan, Y. S.; Perez-Albuerne, E. A.

    1985-01-01

    The low cost potential of thin film solar cells can only be fully realized if large area modules can be made economically with good production yields. This paper deals with two of the critical challenges. A scheme is presented which allows the simple, economical realization of the long recognized, preferred module structure of monolithic integration. Another scheme reduces the impact of shorting defects and, as a result, increases the production yields. Analytical results demonstrating the utilization and advantages of such schemes are discussed.

  18. Packaging material for thin film lithium batteries

    DOEpatents

    Bates, John B.; Dudney, Nancy J.; Weatherspoon, Kim A.

    1996-01-01

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  19. Structures for dense, crack free thin films

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2011-03-08

    The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

  20. Thin Film Sensors for Surface Measurements

    NASA Technical Reports Server (NTRS)

    Martin, Lisa C.; Wrbanek, John D.; Fralick, Gustave C.

    2001-01-01

    Advanced thin film sensors that can provide accurate surface temperature, strain, and heat flux measurements have been developed at NASA Glenn Research Center. These sensors provide minimally intrusive characterization of advanced propulsion materials and components in hostile, high-temperature environments as well as validation of propulsion system design codes. The sensors are designed for applications on different material systems and engine components for testing in engine simulation facilities. Thin film thermocouples and strain gauges for the measurement of surface temperature and strain have been demonstrated on metals, ceramics and advanced ceramic-based composites of various component configurations. Test environments have included both air-breathing and space propulsion-based engine and burner rig environments at surface temperatures up to 1100 C and under high gas flow and pressure conditions. The technologies developed for these sensors as well as for a thin film heat flux gauge have been integrated into a single multifunctional gauge for the simultaneous real-time measurement of surface temperature, strain, and heat flux. This is the first step toward the development of smart sensors with integrated signal conditioning and high temperature electronics that would have the capability to provide feedback to the operating system in real-time. A description of the fabrication process for the thin film sensors and multifunctional gauge will be provided. In addition, the material systems on which the sensors have been demonstrated, the test facilities and the results of the tests to-date will be described. Finally, the results will be provided of the current effort to demonstrate the capabilities of the multifunctional gauge.

  1. Stable localized patterns in thin liquid films

    NASA Technical Reports Server (NTRS)

    Deissler, Robert J.; Oron, Alexander

    1991-01-01

    We study a 2-D nonlinear evolution equation which describes the 3-D spatiotemporal behavior of the air-liquid interface of a thin liquid film lying on the underside of a cooled horizontal plate. We show that the Marangoni effect can stabilize the destabilizing effect of gravity (the Rayleigh-Taylor instability) allowing for the existence of stable localized axisymmetric solutions for a wide range of parameter values. Various properties of these structures are discussed.

  2. Molecular theory of liquid crystal thin films

    NASA Astrophysics Data System (ADS)

    Meng, Shihong

    A molecular theory has been developed to describe the isotropic-nematic transitoon of model nematogens in bulk and in thin films. The surfaces of thin films can be hard surfaces or coated with surfactant monolayers. The theory only includes hard body interactions between all molecule species: solvent, nematogens and surfactants. We have studied the influence of the separation between confining walls, concentration of nematogens, as well as the surface anchoring and areal density of surfactant at the interface upon the phases of nematogens. We have explained the possible existence of planar degenerate phase through entropic pictures and have confirmed close to the bulk isotropic-nematic transition point, the order of the phases of nematogens from isotropic to nematic then back to isotropic when varying the areal density of surfactant monolayers at interfaces. From the results obtained, we believe that we have captured the main competing interactions between surfactants and nematogens and our molecular level theory is capable of describing these two interactions of different natures. Our results can provide a guideline for molecular design of biosensors. We have modeled the molecular systems with as much simplification as possible while retaining the main features. The thesis is arranged into introduction, results on bulk, thin films confined between hard walls and between surfactant monolayers.

  3. Hydrothermal epitaxy of perovskite thin films

    NASA Astrophysics Data System (ADS)

    Chien, Allen T.

    1998-12-01

    This work details the discovery and study of a new process for the growth of epitaxial single crystal thin films which we call hydrothermal epitaxy. Hydrothermal epitaxy is a low temperature solution route for producing heteroepitaxial thin films through the use of solution chemistry and structurally similar substrates. The application of this synthesis route has led to the growth of a variety of epitaxial perovskite (BaTiOsb3, SrTiOsb3, and Pb(Zr,Ti)Osb3 (PZT)) thin films which provides a simple processing pathway for the formation of other materials of technological interest. BaTiOsb3 and PZT heteroepitaxial thin films and powders were produced by the hydrothermal method at 90-200sp°C using various alkali bases. XRD and TEM analysis shows that, in each case, the films and powders form epitaxially with a composition nearly identical to that of the starting precursors. Sequential growth experiments show that film formation initiates by the nucleation of submicron faceted islands at the step edges of the SrTiOsb3 substrates followed by coalescence after longer growth periods. A Ba-rich interfacial layer between the BaTiOsb3 islands and the SrTiOsb3 surface is seen by cross-section TEM during early growth periods. Electrophoretic and Basp{2+} adsorption data provide a chemical basis for the existence of the interfacial layer. Homoepitaxial growth of SrTiOsb3 on SrTiOsb3 also occurs by island growth, suggesting that the growth mode may be a consequence of the aqueous surface chemistry inherent in the process. Film formation is shown to be affected by any number of factors including type of base, pH, temperature, and substrate pretreatments. Different cation bases (Na-, K-, Rb-, Cs-, TMA-OH) demonstrated pronounced changes in powder and film morphology. For example, smaller cation bases (e.g., NaOH, KOH and RbOH) resulted the formation of 1.5 mum \\{100\\} faceted perovskite PbTiOsb3 blocks while larger cation bases (e.g., CsOH and TMA-OH) produced 500 nm sized

  4. Oriented lead zirconate titanate thin films: Characterization of film crystallization

    SciTech Connect

    Voigt, J.A.; Tuttle, B.A.; Headley, T.J.; Eatough, M.O.; Lamppa, D.L.; Goodnow, D.

    1993-11-01

    Film processing temperature and time was varied to characterize the pyrochlore-to-perovskite crystallization of solution-derived PZT 20/80 thin films. 3000 {Angstrom} thick films were prepared by spin deposition using <100> single crystal MgO as substrate. By controlled rapid thermal processing, films at different stages in the perovskite crystallization process were prepared with the tetragonal PZT 20/80 phase being <100>/<001> oriented relative to the MgO surface. An activation energy for the conversion process of 326 kJ/mole was determined by use of an Arrhenius expression using rate constants found by application of the method of Avrami. Activation energy for formation of the PZT 20/80 perovskite phase of the solution-derived films compared favorably with that calculated from data by Kwok and Desu for sputter-deposited 3500 {Angstrom} thick PZT 55/45 films. Similarity in activation energies indicates that the energetics of the conversion process are not strongly dependent on the method used for film deposition.

  5. Low-temperature, solution-processed indium-oxide thin-film transistors fabricated by using an ultraviolet-ozone treatment

    NASA Astrophysics Data System (ADS)

    Kim, Hoon; Kang, Chan-mo; Oh, Yeon-Wha; Ryu, Jin Hwa; Baek, Kyu-Ha; Do, Lee-Mi

    2016-04-01

    For the fabrication of low-temperature solution-processed metal-oxide thin-film transistors (TFTs), alternative annealing processes have recently been studied for reduced fabrication cost and applications to flexible devices. Indium nitrate solution has been proposed as a precursor for the low-temperature solution-processed TFTs. However, due to its high decomposition temperature, achieving a high-performance indium-oxide (In2O3) TFT at temperatures below 200°C is still difficult. In this study, for improved metal-oxide formation in low-temperature solution-processed In2O3 TFT, indium nitrate film was exposed to UV-ozone for 30 min before annealing at 200°C. The smooth scanning electron microscopy (SEM) image of the UV-ozone treated film implies that the indium nitrates are condensed after treatment. In addition, X-ray photoemission spectroscopy (XPS) data suggest that UV-ozone decreases the number of oxygen vacancies and increases the number of metal-oxygen-metal bonds in the indium-oxide films. As a result, high electrical device performance was achieved with an improved Ion/off ratio (˜107) and mobility (1.25 cm2V -1s -1).

  6. Thin Dielectric Films Containing Tb{sup 3+} Ions For Application In Thin Film Solar Cells

    SciTech Connect

    Sendova-Vassileva, M.; Angelov, O.; Dimova-Malmovska, D.; Baumgartner, K.; Carius, R.; Hollaender, B.

    2010-01-21

    Thin transparent dielectric films containing Tb{sup 3+} are developed for application as spectral converters of the solar spectrum in thin film silicon solar cells. The results on the deposition and characterization of thin SiO{sub 2} and Al{sub 2}O{sub 3} films containing Tb{sup 3+} ions are presented. The films are prepared by RF magnetron co-sputtering, a well established technique for large area coatings. Photoluminescence (PL) is measured at room temperature, using the 488 nm line of an Ar laser and a nitrogen-cooled CCD camera attached to a monochromator. The dependence of the PL intensity on the concentration of Tb in the film is studied. It is found that the intensity exhibits a maximum at about 1 at.%. Annealing studies are performed on SiO{sub 2}:Tb with two different methods to improve the PL intensity. In both regimes of annealing, the best results for thin SiO{sub 2}:Tb films are obtained in the temperature range of 650-700 deg. C. After treatment at this temperature the Tb PL increases 2.5-3 times.

  7. Thin Dielectric Films Containing Tb3+ Ions For Application In Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Sendova-Vassileva, M.; Baumgartner, K.; Angelov, O.; Holländer, B.; Dimova-Malmovska, D.; Carius, R.

    2010-01-01

    Thin transparent dielectric films containing Tb3+ are developed for application as spectral converters of the solar spectrum in thin film silicon solar cells. The results on the deposition and characterization of thin SiO2 and Al2O3 films containing Tb3+ ions are presented. The films are prepared by RF magnetron co-sputtering, a well established technique for large area coatings. Photoluminescence (PL) is measured at room temperature, using the 488 nm line of an Ar laser and a nitrogen-cooled CCD camera attached to a monochromator. The dependence of the PL intensity on the concentration of Tb in the film is studied. It is found that the intensity exhibits a maximum at about 1 at.%. Annealing studies are performed on SiO2:Tb with two different methods to improve the PL intensity. In both regimes of annealing, the best results for thin SiO2:Tb films are obtained in the temperature range of 650-700° C. After treatment at this temperature the Tb PL increases 2.5-3 times.

  8. Bauschinger effect in unpassivated freestanding thin films

    NASA Astrophysics Data System (ADS)

    Shishvan, Siamak Soleymani; Nicola, Lucia; Van der Giessen, Erik

    2010-05-01

    Two-dimensional (2D) discrete dislocation plasticity simulations are carried out to investigate the Bauschinger effect (BE) in freestanding thin films. The BE in plastic flow of polycrystalline materials is generally understood to be caused by inhomogeneous deformation during loading, leading to residual stress upon unloading. This inhomogeneity can be caused by dislocation pile-ups, variations in texture, grain orientations, and grain size. To study the BE, columnar-grained films as well as films with multiple grains across the thickness are considered. The film is modeled in a 2D framework by a unit cell consisting of an array of grains with different orientation. In order to capture the interaction among grains, we motivate and explore the use of an affine deformation assumption on the grain level to mimic the three-dimensional geometry in this framework. It is shown that the dispersion of grain size in a film together with the size-dependence of yield strength leads to significant BEs in bare films. Quantitative comparison of simulations with experimental data is provided.

  9. Evaporated CaS thin films for AC electroluminescence devices

    NASA Astrophysics Data System (ADS)

    Kobayashi, H.; Tanaka, S.; Shanker, V.; Shiiki, M.; Deguchi, H.

    1985-08-01

    The growth behavior of evaporated CaS thin films has been investigated to achieve bright electroluminescence. The crystallinity of CaS films is improved with substrate temperature and for temperatures higher than 300°C, the films orient to the (200) plane. Sulfur coevaporation further helps to form a more perfect film even at lower temperatures. A CaS: Ce,Cl electroluminescent thin film device has been fabricated with a brightness of 650 cd/m 2.

  10. Thin film cadmium telluride photovoltaic cells

    SciTech Connect

    Compaan, A.; Bohn, R. )

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  11. Active superconducting devices formed of thin films

    DOEpatents

    Martens, Jon S.; Beyer, James B.; Nordman, James E.; Hohenwarter, Gert K. G.

    1991-05-28

    Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.

  12. Dynamic Characterization of Thin Film Magnetic Materials

    NASA Astrophysics Data System (ADS)

    Gu, Wei

    A broadband dynamic method for characterizing thin film magnetic material is presented. The method is designed to extract the permeability and linewidth of thin magnetic films from measuring the reflection coefficient (S11) of a house-made and short-circuited strip line testing fixture with or without samples loaded. An adaptive de-embedding method is applied to remove the parasitic noise of the housing. The measurements were carried out with frequency up to 10GHz and biasing magnetic fields up to 600 Gauss. Particular measurement setup and 3-step experimental procedures are described in detail. The complex permeability of a 330nm thick continuous FeGaB, 435nm thick laminated FeGaB film and a 100nm thick NiFe film will be induced dynamically in frequency-biasing magnetic field spectra and compared with a theoretical model based on Landau-Lifshitz-Gilbert (LLG) equations and eddy current theories. The ferromagnetic resonance (FMR) phenomenon can be observed among these three magnetic materials investigated in this thesis.

  13. Nanocrystalline silicon based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  14. Supramolecular structure of electroactive polymer thin films

    NASA Astrophysics Data System (ADS)

    Kornilov, V. M.; Lachinov, A. N.; Karamov, D. D.; Nabiullin, I. R.; Kul'velis, Yu. V.

    2016-05-01

    This paper presents the results of an experimental investigation of the supramolecular structure of polydiphenylenephthalide thin films that exhibit effects of resistive switching. The supramolecular structure of the polymer has been investigated using small-angle neutron scattering in conjunction with atomic force microscopy. It has been found that the internal structure of polymer films consists of structural elements in the form of spheroids. The sizes of the structural elements, which were obtained from the neutron scattering data and analysis of the atomic force microscopy images, correlate well with each other. A model of the formation of polymer layers has been proposed. The observed structural elements in polymer films are formed due to the association of macromolecules in the initial polymer solution.

  15. Electrohydrodynamic instabilities in thin trilayer liquid films.

    SciTech Connect

    Roberts, Scott A.; Kumar, Satish

    2010-11-01

    When DC or AC electric fields are applied to a thin liquid film, the interface may become unstable and form a series of pillars. We examine how the presence of a second liquid interface influences pillar dynamics and morphologies. For perfect dielectric films, linear stability analysis of a lubrication-approximation-based model shows that the root mean square voltage governs the pillar behavior. For leaky dielectric films, Floquet theory is applied to carry out the linear stability analysis, and reveals that the accumulation of free charge at each interface depends on the conductivities in the adjoining phases and that high frequencies of the AC electric field may be used to control this accumulation at each interface independently. The results presented here may of interest for the controlled creation of surface topographical features in applications such as patterned coatings and microelectronics.

  16. Magnetization relaxation in sputtered thin permalloy films

    NASA Astrophysics Data System (ADS)

    Oliveira, R. C.; Rodríguez-Suárez, R. L.; Aguiar, F. M. De; Rezende, S. M.; Fermin, J. R.; Azevedo, A.

    2004-05-01

    In order to understand the underlying phenomena of magnetization damping in metallic thin films, samples of permalloy films were grown by magnetron sputtering, and their 8.6-GHz ferromagnetic resonance linewidth ΔH has been measured as a function of the Permalloy (Py) film thickness t, at room temperature. We made samples of Py(t)/Si(001) and X/Py(t)/X/Si(001), with X=Pd (40Å), and Cr (25Å), with 20Å < t < 200Å. While ΔH scales with t-2 in the bare Py/Si series, it is shown that the damping behavior strongly depends on X in the sandwich samples.

  17. Preface: Thin films of molecular organic materials

    NASA Astrophysics Data System (ADS)

    Fraxedas, J.

    2008-03-01

    This special issue is devoted to thin films of molecular organic materials and its aim is to assemble numerous different aspects of this topic in order to reach a wide scientific audience. Under the term 'thin films', structures with thicknesses spanning from one monolayer or less up to several micrometers are included. In order to narrow down this relaxed definition (how thin is thin?) I suggest joining the stream that makes a distinction according to the length scale involved, separating nanometer-thick films from micrometer-thick films. While the physical properties of micrometer-thick films tend to mimic those of bulk materials, in the low nanometer regime new structures (e.g., crystallographic and substrate-induced phases) and properties are found. However, one has to bear in mind that some properties of micrometer-thick films are really confined to the film/substrate interface (e.g. charge injection), and are thus of nanometer nature. Supported in this dimensionality framework, this issue covers the most ideal and model 0D case, a single molecule on a surface, through to the more application-oriented 3D case, placing special emphasis on the fascinating 2D domain that is monolayer assembly. Thus, many aspects will be reviewed, such as single molecules, self-organization, monolayer regime, chirality, growth, physical properties and applications. This issue has been intentionally restricted to small molecules, thus leaving out polymers and biomolecules, because for small molecules it is easier to establish structure--property relationships. Traditionally, the preparation of thin films of molecular organic materials has been considered as a secondary, lower-ranked part of the more general field of this class of materials. The coating of diverse surfaces such as silicon, inorganic and organic single crystals, chemically modified substrates, polymers, etc., with interesting molecules was driven by the potential applications of such molecular materials

  18. Competitive growth of In2O3 nanorods with rectangular cross sections

    NASA Astrophysics Data System (ADS)

    Yan, Youguo; Zhou, Lixia

    2008-08-01

    In2O3 nanorods with rectangular cross sections have been successfully synthesized using Au as a catalyst through chemical vapor deposition methods. The synthesized nanorods possessed larger size than that of the catalyst particle. The growth process was discussed through detailed theory analysis and experimental validation, and a competitive growth model between axial growth under the vapor liquid solid (VLS) mechanism and lateral growth controlled by the vapor solid (VS) mechanism was proposed to explain the formation of a rectangular cross section and the size change of the nanorods. The research regarding controlled growth under the two mechanisms, viz. VLS and VS, was beneficial for exploration into the controlled growth of complicated functional nanomaterials. Furthermore, the photoluminescence property was also studied.

  19. The formation and analysis of thin film high temperature superconductors

    SciTech Connect

    Nastasi, M.; Muenchausen, R.E.; Arendt, P.N.

    1989-01-01

    Thin films of high temperature superconductors have been fabricated using a variety of physical vapor deposition techniques. Recent results of HTS thin films produced by coevaporation, sputtering and laser deposition will be briefly reviewed. In addition some examples of the utility of high energy ion backscattering for the analysis of film stoichiometry will be given. 34 refs., 6 figs.

  20. The formation and analysis of thin film high temperature superconductors

    NASA Astrophysics Data System (ADS)

    Nastasi, Michael; Muenchausen, Ross E.; Arendt, Paul N.

    Thin films of high temperature superconductors have been fabricated using a variety of physical vapor deposition techniques. Recent results of HTS thin films produced by coevaporation, sputtering and laser deposition will be briefly reviewed. In addition some examples of the utility of high energy ion backscattering for the analysis of film stoichiometry will be given.

  1. Dynamics of Bimodal Growth in Pentacene Thin Films

    SciTech Connect

    Mayer, Alex C.; Malliaras, George G.; Kazimirov, Alexander

    2006-09-08

    Previous studies have established that pentacene films deposited on silicon oxide consist of a substrate-induced 'thin-film' phase, with the bulk phase of pentacene detected in thicker films only. We show that the bulk phase nucleates as early as the first monolayer, and continues to nucleate as film growth progresses, shadowing the growth of the thin-film phase. Moreover, we find that the transition between the 'thin-film' and the bulk phase is not a continuous one, as observed in heteroepitaxial systems, but rather the two phases nucleate and grow independently.

  2. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin-Film Solar Cells: Preprint

    SciTech Connect

    Pern, F. J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01

    The stability of intrinsic and Al-doped single- and bi-layer ZnO for thin-film CuInGaSe2 solar cells, along with Al-doped Zn1-xMgxO alloy and Sn-doped In2O3 (ITO) and F-doped SnO2, was evaluated by direct exposure to damp heat (DH) at 85oC and 85% relative humidity. The results show that the DH-induced degradation rates followed the order of Al-doped ZnO and Zn1-xMgxO >> ITO > F:SnO2. The degradation rates of Al:ZnO were slower for films of higher thickness, higher substrate temperature in sputter-deposition, and with dry-out intervals. As inferred from the optical micro-imaging showing the initiation and propagation of degrading patterns and regions, the degradation behavior appears similar for all TCOs, despite the obvious difference in the degradation rate. A degradation mechanism is proposed to explain the temporal process involving thermal hydrolysis.

  3. LiMn2O4-based cathode thin films for Li thin-film batteries

    NASA Astrophysics Data System (ADS)

    Yim, Haena; Shin, Dong-Wook; Choi, Ji-Won

    2016-01-01

    Substitution methods for Mn3+ in a spinel lithium manganese oxide with other cations have been used to prevent capacity degradation during the electrochemical charge and discharge of Li-batteries by increasing the average valence of Mn. In particular, in this review we outlin the effects of Sn substitution on the cycling performance of LiMn2O4 thin films that can be used as positive electrode in Li-batteries. The thin films were prepared by using pulsed laser deposition and solution deposition with regard to the structural and the electro-chemical characteristics.

  4. Metallic Thin-Film Bonding and Alloy Generation

    NASA Technical Reports Server (NTRS)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  5. Low-Cost Detection of Thin Film Stress during Fabrication

    NASA Technical Reports Server (NTRS)

    Nabors, Sammy A.

    2015-01-01

    NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.

  6. Investigating the interfacial dynamics of thin films

    NASA Astrophysics Data System (ADS)

    Rosenbaum, Aaron W.

    This thesis probes the interfacial dynamics and associated phenomena of thin films. Surface specific tools were used to study the self-assembly of alkanethiols, the mono- and bilayer dynamics of SF6, and the surface motion of poly(methyl methacrylate). Non-pertubative helium atom scattering was the principal technique used to investigate these systems. A variety of other complementary tools, including scanning tunneling microscopy, electron diffraction, Auger spectroscopy, atomic force microscopy, and ellipsometry were used in tandem with the neutral atom scattering studies. Controlling the spontaneous assembly of alkanethiols on Au(111) requires a better fundamental understanding of the adsorbate-adsorbate and substrate-adsorbate interactions. Our characterization focused on two key components, the surface structure and adsorbate vibrations. The study indicates that the Au(111) reconstruction plays a larger role than anticipated in the low-density phase of alkanethiol monolayers. A new structure is proposed for the 1-decanethiol monolayer that impacts the low-energy vibrational mode. Varying the alkane chain lengths imparts insight into the assembly process via characterization of a dispersionless phonon mode. Studies of SF6 physisorbed on Au(111) bridge surface research on rare gas adsorbates with complicated dynamical organic thin films. Mono- and bilayer coverages of SF6/Au(111) were studied at cryogenic temperatures. Our experiments probed the surface properties of SF6 yielding insights into substrate and coverage effects. The study discovered a dispersionless Einstein oscillation with multiple harmonic overtones. A second layer of SF6 softened the mode, but did not show any indications of bulk or cooperative interactions. The vibrational properties of SF 6 showed both striking similarities and differences when compared with physisorbed rare gases. Lastly, this thesis will discuss studies of thin film poly(methyl methacrylate) on Si. The non-pertubative and

  7. Pulsed laser deposition of pepsin thin films

    NASA Astrophysics Data System (ADS)

    Kecskeméti, G.; Kresz, N.; Smausz, T.; Hopp, B.; Nógrádi, A.

    2005-07-01

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ( λ = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm 2. The pressure in the PLD chamber was 2.7 × 10 -3 Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm 2. The protein digesting capacity of the transferred pepsin was tested by adapting a modified "protein cube" method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  8. Physical Properties of Thin Film Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Bouras, N.; Djebbouri, M.; Outemzabet, R.; Sali, S.; Zerrouki, H.; Zouaoui, A.; Kesri, N.

    2005-10-01

    The physics and chemistry of semiconducting materials is a continuous question of debate. We can find a large stock of well-known properties but at the same time, many things are not understood. In recent years, porous silicon (PS-Si), diselenide of copper and indium (CuInSe2 or CIS) and metal oxide semiconductors like tin oxide (SnO2) and zinc oxide (ZnO) have been subjected to extensive studies because of the rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, in biocompatible materials, in Li-based batteries, in new generation of MOSFETS. Bulk structure and surface and interface properties play important roles in all of these applications. A deeper understanding of these fundamental properties would impact largely on technological application performances. In our laboratory, thin films of undoped and antimony-doped films of tin oxide have been deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS was prepared by flash evaporation or close-space vapor transport. Some of the deposition parameters have been varied, such as substrate temperature, time of deposition (or anodization), and molar concentration of bath preparation. For some samples, thermal annealing was carried out under oxygen (or air), under nitrogen gas and under vacuum. Deposition and post-deposition parameters are known to strongly influence film structure and electrical resistivity. We investigated the influence of film thickness and thermal annealing on structural optical and electrical properties of the films. Examination of SnO2 by x-ray diffraction showed that the main films are polycrystalline with rutile structure. The x-ray spectra of ZnO indicated a hexagonal wurtzite structure. Characterizations of CIS films with compositional analysis, x-ray diffraction, scanning microscopy, spectrophotometry, and photoluminescence were carried out.

  9. High- Tc thin-film magnetometer

    SciTech Connect

    Miklich, A.H.; Wellstood, F.C.; Kingston, J.J.; Clarke, J. ); Colclough, M.S. ); Cardona, A.H.; Bourne, L.C.; Olson, W.L.; Eddy, M.M. )

    1990-09-01

    We have constructed and tested high-{Tc} magnetometers by coupling a high-{Tc} thin-film Superconducting QUantum Interference Device (SQUID) to two different high-{Tc} thin-film flux transformers. The SQUID was made from Tl{sub 2}CaBa{sub 2}Cu{sub 2}O{sub 8+y} films grown on MgO, with junctions consisting of native grain boundaries. The flux transformers were made from YBa{sub 2}Cu{sub 3}O{sub 7-x}, and each had 10-turn input coils and a single-turn pickup loop. The first transformer, which was patterned with a combination of shadow masks and photolithography, yielded a magnetic field gain of about {minus}7.5, functioned up to 79 K, and gave a magnetic field sensitivity B{sub N} (10 Hz) {approx} 3.1 pT Hz{sup {minus}1/2}at 38 K. The second transformer, which was patterned entirely by photolithography, yielded a gain of about {minus}8.7, functioned up to 25 K, and had a sensitivity B{sub N} (10 Hz) {approx} 3.5 pT Hz{sup {minus}1/2} at 4.2 K. In both cases, the limiting noise arose in the SQUID. 10 refs., 5 figs., 1 tab.

  10. Strain Tuning of Ferroelectric Thin Films *

    NASA Astrophysics Data System (ADS)

    Schlom, Darrell G.; Chen, Long-Qing; Eom, Chang-Beom; Rabe, Karin M.; Streiffer, Stephen K.; Triscone, Jean-Marc

    2007-08-01

    Predictions and measurements of the effect of biaxial strain on the properties of epitaxial ferroelectric thin films and superlattices are reviewed. Results for single-layer ferroelectric films of biaxially strained SrTiO3, BaTiO3, and PbTiO3 as well as PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices are described. Theoretical approaches, including first principles, thermodynamic analysis, and phase-field models, are applied to these biaxially strained materials, the assumptions and limitations of each technique are explained, and the predictions are compared. Measurements of the effect of biaxial strain on the paraelectric-to-ferroelectric transition temperature (TC) are shown, demonstrating the ability of percent-level strains to shift TC by hundreds of degrees in agreement with the predictions that predated such experiments. Along the way, important experimental techniques for characterizing the properties of strained ferroelectric thin films and superlattices, as well as appropriate substrates on which to grow them, are mentioned.

  11. Thin-film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  12. PZT Thin Film Piezoelectric Traveling Wave Motor

    NASA Technical Reports Server (NTRS)

    Shen, Dexin; Zhang, Baoan; Yang, Genqing; Jiao, Jiwei; Lu, Jianguo; Wang, Weiyuan

    1995-01-01

    With the development of micro-electro-mechanical systems (MEMS), its various applications are attracting more and more attention. Among MEMS, micro motors, electrostatic and electromagnetic, are the typical and important ones. As an alternative approach, the piezoelectric traveling wave micro motor, based on thin film material and integrated circuit technologies, circumvents many of the drawbacks of the above mentioned two types of motors and displays distinct advantages. In this paper we report on a lead-zirconate-titanate (PZT) piezoelectric thin film traveling wave motor. The PZT film with a thickness of 150 micrometers and a diameter of 8 mm was first deposited onto a metal substrate as the stator material. Then, eight sections were patterned to form the stator electrodes. The rotor had an 8 kHz frequency power supply. The rotation speed of the motor is 100 rpm. The relationship of the friction between the stator and the rotor and the structure of the rotor on rotation were also studied.

  13. Orthogonal Thin Film Photovoltaics on Vertical Nanostructures.

    PubMed

    Ahnood, Arman; Zhou, H; Suzuki, Y; Sliz, R; Fabritius, T; Nathan, Arokia; Amaratunga, G A J

    2015-12-01

    Decoupling paths of carrier collection and illumination within photovoltaic devices is one promising approach for improving their efficiency by simultaneously increasing light absorption and carrier collection efficiency. Orthogonal photovoltaic devices are core-shell type structures consisting of thin film photovoltaic stack on vertical nanopillar scaffolds. These types of devices allow charge collection to take place in the radial direction, perpendicular to the path of light in the vertical direction. This approach addresses the inherently high recombination rate of disordered thin films, by allowing semiconductor films with minimal thicknesses to be used in photovoltaic devices, without performance degradation associated with incomplete light absorption. This work considers effects which influence the performance of orthogonal photovoltaic devices. Illumination non-uniformity as light travels across the depth of the pillars, electric field enhancement due to the nanoscale size and shape of the pillars, and series resistance due to the additional surface structure created through the use of pillars are considered. All of these effects influence the operation of orthogonal solar cells and should be considered in the design of vertically nanostructured orthogonal photovoltaics. PMID:26676997

  14. Orthogonal Thin Film Photovoltaics on Vertical Nanostructures

    NASA Astrophysics Data System (ADS)

    Ahnood, Arman; Zhou, H.; Suzuki, Y.; Sliz, R.; Fabritius, T.; Nathan, Arokia; Amaratunga, G. A. J.

    2015-12-01

    Decoupling paths of carrier collection and illumination within photovoltaic devices is one promising approach for improving their efficiency by simultaneously increasing light absorption and carrier collection efficiency. Orthogonal photovoltaic devices are core-shell type structures consisting of thin film photovoltaic stack on vertical nanopillar scaffolds. These types of devices allow charge collection to take place in the radial direction, perpendicular to the path of light in the vertical direction. This approach addresses the inherently high recombination rate of disordered thin films, by allowing semiconductor films with minimal thicknesses to be used in photovoltaic devices, without performance degradation associated with incomplete light absorption. This work considers effects which influence the performance of orthogonal photovoltaic devices. Illumination non-uniformity as light travels across the depth of the pillars, electric field enhancement due to the nanoscale size and shape of the pillars, and series resistance due to the additional surface structure created through the use of pillars are considered. All of these effects influence the operation of orthogonal solar cells and should be considered in the design of vertically nanostructured orthogonal photovoltaics.

  15. Porous Organic Cage Thin Films and Molecular-Sieving Membranes.

    PubMed

    Song, Qilei; Jiang, Shan; Hasell, Tom; Liu, Ming; Sun, Shijing; Cheetham, Anthony K; Sivaniah, Easan; Cooper, Andrew I

    2016-04-01

    Porous organic cage molecules are fabricated into thin films and molecular-sieving membranes. Cage molecules are solution cast on various substrates to form amorphous thin films, with the structures tuned by tailoring the cage chemistry and processing conditions. For the first time, uniform and pinhole-free microporous cage thin films are formed and demonstrated as molecular-sieving membranes for selective gas separation. PMID:26800019

  16. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  17. Form Birefringence in Thin Films with Oblique Columnar Structures

    NASA Astrophysics Data System (ADS)

    Wang, Jian-Guo; Shao, Jian-Da; Wang, Su-Mei; He, Hong-Bo; Fan, Zheng-Xiu

    2005-08-01

    Effective medium theory is useful for designing optical elements with form birefringent subwavelength structures. Thin films fabricated by oblique deposition are similar to the two-dimensional surface relief subwavelength gratings. We use the effective medium theory to calculate the anisotropic optical properties of the thin films with oblique columnar structures. The effective refractive indices and the directions are calculated from effective medium theory. It is shown that optical thin films with predetermined refractive indices and birefringence may be engineered.

  18. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  19. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  20. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, Raoul B.

    1988-01-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  1. Dye-Sensitization Of Nanocrystalline ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Ajimsha, R. S.; Tyagi, M.; Das, A. K.; Misra, P.; Kukreja, L. M.

    2010-12-01

    Nannocrystalline and nanoporus thin films of ZnO were synthesized on glass substrates by using wet chemical drop casting method. X-ray diffraction measurements on these samples confirmed the formation of ZnO nanocrystallites in hexagonal wurtzite phase with mean size of ˜20 nm. Photo sensitization of these nanostructured ZnO thin films was carried out using three types of dyes Rhodamine 6 G, Chlorophyll and cocktail of Rhodamine 6 G and Chlorophyll in 1:1 ratio. Dye sensitized ZnO thin films showed enhanced optical absorption in visible spectral region compared to the pristine ZnO thin films.

  2. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    DOEpatents

    Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

    1999-01-01

    A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

  3. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  4. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  5. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  6. Piezoelectric thin films and their applications for electronics

    NASA Astrophysics Data System (ADS)

    Yoshino, Yukio

    2009-03-01

    ZnO and AlN piezoelectric thin films have been studied for applications in bulk acoustic wave (BAW) resonator. This article introduces methods of forming ZnO and AlN piezoelectric thin films by radio frequency sputtering and applications of BAW resonators considering the relationship between the crystallinity of piezoelectric thin films and the characteristics of the BAW resonators. Using ZnO thin films, BAW resonators were fabricated for a contour mode at 3.58 MHz and thickness modes from 200 MHz to 5 GHz. The ZnO thin films were combined with various materials, substrates, and thin films to minimize the temperature coefficient of frequency (TCF). The minimum TCF of BAW resonators was approximately 2 ppm/°C in the range -20 to 80 °C. The electromechanical coupling coefficient (k2) in a 1.9 GHz BAW resonator was 6.9%. Using AlN thin films, 5-20 GHz BAW resonators with an ultrathin membrane were realized. The membrane thickness of a 20 GHz BAW resonator was about 200 nm, k2 was 6.1%, and the quality factor (Q) was about 280. Q decreased with increasing resonant frequency. The value of k2 is almost the same for 5-20 GHz resonators. This result could be obtained by improving the thickness uniformity, by controlling internal stress of thin films, and by controlling the crystallinity of AlN piezoelectric thin film.

  7. Dye-Sensitization Of Nanocrystalline ZnO Thin Films

    SciTech Connect

    Ajimsha, R. S.; Tyagi, M.; Das, A. K.; Misra, P.; Kukreja, L. M.

    2010-12-01

    Nannocrystalline and nanoporus thin films of ZnO were synthesized on glass substrates by using wet chemical drop casting method. X-ray diffraction measurements on these samples confirmed the formation of ZnO nanocrystallites in hexagonal wurtzite phase with mean size of {approx}20 nm. Photo sensitization of these nanostructured ZnO thin films was carried out using three types of dyes Rhodamine 6 G, Chlorophyll and cocktail of Rhodamine 6 G and Chlorophyll in 1:1 ratio. Dye sensitized ZnO thin films showed enhanced optical absorption in visible spectral region compared to the pristine ZnO thin films.

  8. Rechargeable thin film battery and method for making the same

    DOEpatents

    Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

    2006-01-03

    A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

  9. Role of asphaltenes in stabilizing thin liquid emulsion films.

    PubMed

    Tchoukov, Plamen; Yang, Fan; Xu, Zhenghe; Dabros, Tadeusz; Czarnecki, Jan; Sjöblom, Johan

    2014-03-25

    Drainage kinetics, thickness, and stability of water-in-oil thin liquid emulsion films obtained from asphaltenes, heavy oil (bitumen), and deasphalted heavy oil (maltenes) diluted in toluene are studied. The results show that asphaltenes stabilize thin organic liquid films at much lower concentrations than maltenes and bitumen. The drainage of thin organic liquid films containing asphaltenes is significantly slower than the drainage of the films containing maltenes and bitumen. The films stabilized by asphaltenes are much thicker (40-90 nm) than those stabilized by maltenes (∼10 nm). Such significant variation in the film properties points to different stabilization mechanisms of thin organic liquid films. Apparent aging effects, including gradual increase of film thickness, rigidity of oil/water interface, and formation of submicrometer size aggregates, were observed for thin organic liquid films containing asphaltenes. No aging effects were observed for films containing maltenes and bitumen in toluene. The increasing stability and lower drainage dynamics of asphaltene-containing thin liquid films are attributed to specific ability of asphaltenes to self-assemble and form 3D network in the film. The characteristic length of stable films is well beyond the size of single asphaltene molecules, nanoaggregates, or even clusters of nanoaggregates reported in the literature. Buildup of such 3D structure modifies the rheological properties of the liquid film to be non-Newtonian with yield stress (gel like). Formation of such network structure appears to be responsible for the slower drainage of thin asphaltenes in toluene liquid films. The yield stress of liquid film as small as ∼10(-2) Pa is sufficient to stop the drainage before the film reaches the critical thickness at which film rupture occurs. PMID:24564447

  10. Rechargeable thin-film electrochemical generator

    DOEpatents

    Rouillard, Roger; Domroese, Michael K.; Hoffman, Joseph A.; Lindeman, David D.; Noel, Joseph-Robert-Gaetan; Radewald, Vern E.; Ranger, Michel; Sudano, Anthony; Trice, Jennifer L.; Turgeon, Thomas A.

    2000-09-15

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  11. Levan nanostructured thin films by MAPLE assembling.

    PubMed

    Sima, Felix; Mutlu, Esra Cansever; Eroglu, Mehmet S; Sima, Livia E; Serban, Natalia; Ristoscu, Carmen; Petrescu, Stefana M; Oner, Ebru Toksoy; Mihailescu, Ion N

    2011-06-13

    Synthesis of nanostructured thin films of pure and oxidized levan exopolysaccharide by matrix-assisted pulsed laser evaporation is reported. Solutions of pure exopolysaccharides in dimethyl sulfoxide were frozen in liquid nitrogen to obtain solid cryogenic pellets that have been used as targets in pulsed laser evaporation experiments with a KrF* excimer source. The expulsed material was collected and assembled onto glass slides and Si wafers. The contact angle studies evidenced a higher hydrophilic behavior in the case of oxidized levan structures because of the presence of acidic aldehyde-hydrogen bonds of the coating formed after oxidation. The obtained films preserved the base material composition as confirmed by Fourier transform infrared spectroscopy. They were compact with high specific surface areas, as demonstrated by scanning electron and atomic force microscopy investigations. In vitro colorimetric assays revealed a high potential for cell proliferation for all coatings with certain predominance for oxidized levan. PMID:21520921

  12. Galvanostatic Ion Detrapping Rejuvenates Oxide Thin Films.

    PubMed

    Arvizu, Miguel A; Wen, Rui-Tao; Primetzhofer, Daniel; Klemberg-Sapieha, Jolanta E; Martinu, Ludvik; Niklasson, Gunnar A; Granqvist, Claes G

    2015-12-01

    Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvanostatic treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. Here we report on amorphous electrochromic (EC) WO3 thin films prepared by sputtering and electrochemically cycled in a lithium-containing electrolyte under conditions leading to severe loss of charge exchange capacity and optical modulation span. Time-of-flight elastic recoil detection analysis (ToF-ERDA) documented pronounced Li(+) trapping associated with the degradation of the EC properties and, importantly, that Li(+) detrapping, caused by a weak constant current drawn through the film for some time, could recover the original EC performance. Thus, ToF-ERDA provided direct and unambiguous evidence for Li(+) detrapping. PMID:26599729

  13. Electron impinging on metallic thin film targets

    NASA Astrophysics Data System (ADS)

    Rouabah, Z.; Bouarissa, N.; Champion, C.

    2010-03-01

    Based on the Vicanek and Urbassek theory [M. Vicanek, H.M. Urbassek, Phys. Rev. B 44 (1991) 7234] combined to a home-made Monte Carlo simulation, the present work deals with backscattering coefficients, mean penetration depths and stopping profiles for 1-4 keV electrons normally incident impinging on Al and Cu thin film targets. The cross-sections used to describe the electron transport are calculated via the appropriate analytical expression given by Jablonski [A. Jablonski, Phys. Rev. B 58 (1998) 16470] whose new improved version has been recently given [Z. Rouabah, N. Bouarissa, C. Champion, N. Bouaouadja, Appl. Surf. Sci. 255 (2009) 6217]. The behavior of the backscattering coefficient, mean penetration depth and stopping profiles versus the metallic film thickness at the nanometric scale and beyond is here analyzed and discussed.

  14. Exchange stiffness in thin film Co alloys

    NASA Astrophysics Data System (ADS)

    Eyrich, C.; Huttema, W.; Arora, M.; Montoya, E.; Rashidi, F.; Burrowes, C.; Kardasz, B.; Girt, E.; Heinrich, B.; Mryasov, O. N.; From, M.; Karis, O.

    2012-04-01

    The exchange stiffness (Aex) is one of the key parameters controlling magnetization reversal in magnetic materials. We used a method based on the spin spiral formation in two ferromagnetic films antiferromagnetically coupled across a non-magnetic spacer layer and Brillouin scattering to measure Aex for a series of Co1-δXδ (X = Cr, Ni, Ru, Pd, Pt) thin film alloys. The results show that Aex of Co alloys does not necessarily scale with Ms; Aex approximately decreases at the rate of 1.1%, 1.5%, 2.1%, 3.5%, and 5.6%, while Ms decreases at the rate of 1.1%, 0.5%, 1.1%, 3.7%, and 2.5% per addition of 1 at % of Pt, Ni, Pd, Cr, and Ru, respectively.

  15. Thermoviscoelastic models for polyethylene thin films

    NASA Astrophysics Data System (ADS)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-02-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach is that the experimentally inaccessible out-of-plane material properties are determined by fitting the model predictions to the measured nonlinear behavior of the film. Creep tests, uniaxial tension tests, and biaxial bubble tests are used to determine the material parameters. The model has been validated experimentally, against data obtained from uniaxial tension tests and biaxial cylindrical tests at a wide range of temperatures and strain rates spanning two orders of magnitude.

  16. Process for making dense thin films

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

    2005-07-26

    Provided are low-cost, mechanically strong, highly electronically conductive porous substrates and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical device substrates of novel composition and techniques for forming thin electrode/membrane/electrolyte coatings on the novel or more conventional substrates. In particular, in one embodiment the invention provides techniques for firing of device substrate to form densified electrolyte/membrane films 5 to 20 microns thick. In another embodiment, densified electrolyte/membrane films 5 to 20 microns thick may be formed on a pre-sintered substrate by a constrained sintering process. In some cases, the substrate may be a porous metal, alloy, or non-nickel cermet incorporating one or more of the transition metals Cr, Fe, Cu and Ag, or alloys thereof.

  17. High Performance Airbrushed Organic Thin Film Transistors

    SciTech Connect

    Chan, C.; Richter, L; Dinardo, B; Jaye, C; Conrad, B; Ro, H; Germack, D; Fischer, D; DeLongchamp, D; Gunlach, D

    2010-01-01

    Spray-deposited poly-3-hexylthiophene (P3HT) transistors were characterized using electrical and structural methods. Thin-film transistors with octyltrichlorosilane treated gate dielectrics and spray-deposited P3HT active layers exhibited a saturation regime mobility as high as 0.1 cm{sup 2} V{sup -1} s{sup -1}, which is comparable to the best mobilities observed in high molecular mass P3HT transistors prepared using other methods. Optical and atomic force microscopy showed the presence of individual droplets with an average diameter of 20 {micro}m and appreciable large-scale film inhomogeneities. Despite these inhomogeneities, near-edge x-ray absorption fine structure spectroscopy of the device-relevant channel interface indicated excellent orientation of the P3HT.

  18. Interface Effects in Perovskite Thin Films

    NASA Astrophysics Data System (ADS)

    Lepetit, Marie-Bernadette; Mercey, Bernard; Simon, Charles

    2012-02-01

    The control of matter properties (transport, magnetic, dielectric,…) using synthesis as thin films is strongly hindered by the lack of reliable theories, able to guide the design of new systems, through the understanding of the interface effects and of the way the substrate constraints are imposed on the material. The present Letter analyzes the energetic contributions at the interfaces, and proposes a model describing the microscopic mechanisms governing the interactions at an epitaxial interface between a manganite and another transition metal oxide in perovskite structure (as for instance SrTiO3). The model is checked against experimental results and literature analysis.

  19. Nanostructured thin films and their macrobehaviors

    NASA Astrophysics Data System (ADS)

    Lo, Mei-Ling; Liao, Shih-Fang; Lee, Cheng-Chung

    2014-08-01

    The iridescence green band and cyan tail of the wing on Papilio blumei butterfly were investigated. The bi-color phenomenon on the scales of butterfly wings was found and analyzed. The spectral change with thickness of chitin-air layers, width of air hole, total layer numbers and incident angle of light were simulated by FDTD method. 2D photonic-crystal model was applied to explain the change of reflectance spectra and color with angle. The replica of structural color and nanostructured thin films for Papilio blumei butterflies was fabricated successfully by three main techniques, PS spheres bedding, electron-beam gun evaporation and ICP etching.

  20. Robust, Thin Optical Films for Extreme Environments

    NASA Technical Reports Server (NTRS)

    2006-01-01

    The environment of space presents scientists and engineers with the challenges of a harsh, unforgiving laboratory in which to conduct their scientific research. Solar astronomy and X-ray astronomy are two of the more challenging areas into which NASA scientists delve, as the optics for this high-tech work must be extremely sensitive and accurate, yet also be able to withstand the battering dished out by radiation, extreme temperature swings, and flying debris. Recent NASA work on this rugged equipment has led to the development of a strong, thin film for both space and laboratory use.

  1. Thin film photovoltaic device with multilayer substrate

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1984-01-01

    A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

  2. Polydiacetylene thin films for nonlinear optical applications

    NASA Technical Reports Server (NTRS)

    Paley, Mark S.

    1993-01-01

    One very promising class of organic compounds for nonlinear optical (NLO) applications are polydiacetylenes, which are novel in that they are highly conjugated polymers which can also be crystalline. Polydiacetylenes offer several advantages over other organic materials: because of their highly conjugated electronic structures, they are capable of possessing large optical nonlinearities with fast response times; because they are crystalline, they can be highly ordered, which is essential for optimizing their NLO properties; and, last, because they are polymeric, they can be formed as thin films, which are useful for device fabrication. We have actively been carrying out ground-based research on several compounds of interest.

  3. Articles including thin film monolayers and multilayers

    SciTech Connect

    Li, DeQuan; Swanson, B.I.

    1992-12-31

    This invention pertains to thin film assemblies or devices useful as sensors, nonlinear optical materials, and trace material scavengers. It claims a base substrate having an oxide surface layer, and a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate. A metal species may be provided attached to the ligand, and a multifunctional organic ligand may be provided attached to the metal species. A second metal species may be provided attached to the multifunctional ligand.

  4. Thin film dielectric microstrip kinetic inductance detectors

    NASA Astrophysics Data System (ADS)

    Mazin, Benjamin A.; Sank, Daniel; McHugh, Sean; Lucero, Erik A.; Merrill, Andrew; Gao, Jiansong; Pappas, David; Moore, David; Zmuidzinas, Jonas

    2010-03-01

    Microwave kinetic inductance detectors, or MKIDs, are a type of low temperature detector that exhibit intrinsic frequency domain multiplexing at microwave frequencies. We present the first theory and measurements on a MKID based on a microstrip transmission line resonator. A complete characterization of the dielectric loss and noise properties of these resonators is performed, and agrees well with the derived theory. A competitive noise equivalent power of 5×10-17 W Hz-1/2 at 10 Hz has been demonstrated. The resonators exhibit the highest quality factors known in a microstrip resonator with a deposited thin film dielectric.

  5. Thin-Film Photovoltaic Device Fabrication

    NASA Technical Reports Server (NTRS)

    Scofield, John H.

    2003-01-01

    This project will primarily involve the fabrication and characterization of thin films and devices for photovoltaic applications. The materials involved include Il-VI materials such as zinc oxide, cadmium sulfide, and doped analogs. The equipment ot be used will be sputtering and physical evaporations. The types of characterization includes electrical, XRD, SEM and CV and related measurements to establish the efficiency of the devices. The faculty fellow will be involved in a research team composed of NASA and University researchers as well as students and other junior researchers.

  6. Effective dynamics for ferromagnetic thin films

    SciTech Connect

    Garcia-Cervera, Carlos J.; E, Weinan

    2001-07-01

    In a ferromagnetic material, the dynamics of the relaxation process are affected by the presence of a strong shape or material anisotropy. In this article, we systematically explore this fact to derive the effective dynamical equation for a soft ferromagnetic thin film. We show that, as a consequence of the interplay between shape anisotropy and damping, the gyromagnetic term is effectively also a damping term for the in-plane components of the magnetization distribution. We validate our result through numerical simulation of the original Landau{endash}Lifshitz equation and our effective equation. {copyright} 2001 American Institute of Physics.

  7. Sensitive detection of NMR for thin films.

    PubMed

    Lee, Soonchil

    2015-10-01

    NMR can provide valuable information about thin films, but its relatively low sensitivity allows data acquisition only from bulk samples. The sensitivity problem is circumvented by detection schemes with higher sensitivity and/or enhanced polarization. In most of these ingenious techniques, electrons play a central role through hyperfine interactions with the nuclei of interest or the conversion of the spin orientation to an electric charge. The state of the art in NMR is the control of a single nuclear spin state, the complete form of which is one of the ultimate goals of nanotechnology. PMID:26549846

  8. Stable localized patterns in thin liquid films

    NASA Technical Reports Server (NTRS)

    Deissler, Robert J.; Oron, Alexander

    1992-01-01

    A two-dimensional nonlinear evolution equation is studied which describes the three-dimensional spatiotemporal behavior of the air-liquid interface of a thin liquid film lying on the underside of a cooled horizontal plate. It is shown that the equation has a Liapunov functional, and this fact is exploited to demonstrate that the Marangoni effect can stabilize the destabilizing effect of gravity (the Rayleigh-Taylor instability), allowing for the existence of stable localized axisymmetric solutions for a wide range of parameter values. Various properties of these structures are discussed.

  9. Directed Assembly of Nanofilled Polymer Thin Films

    NASA Astrophysics Data System (ADS)

    Karim, Alamgir

    Facile directed self-assembly (DSA) of multicomponent thin films is important for potential technological applications. This requires a fine control of a complex interplay of processing parameters that need to be properly optimized for different organized structures. This talk will discuss some of our recent success towards realizing tunable DSA of soft matter multicomponent systems involving a dispersion of polymer-grafted nanoparticles in block copolymer or homopolymer matrices. DSA methods for such multicomponent films will be discussed. These include the use of zone-annealing with soft-shear to create highly anisotropic nanoparticle arrays, while direct immersion annealing (DIA) has been used to order nanoparticle filled films by dipping the films into controlled solvent quality solvent mixtures. A recently observed phenomena of confinement driven entropic order and phase segregation of polymer grafted nanoparticles in similar and dissimilar polymer matrices in melt state will be discussed. A high density of nano particles of different types ranging from metallic to inorganic to organic were patterned almost exclusively into channels via topographical soft confinement using entropic forces. Enthalpic interactions between the nanoparticle grafted layer and the polymer matrix could be used as a further handle to tune the directed assembly of the nanoparticles. The phenomena will be discussed in terms of confinement parameters, partition coefficient, free energy gain and entropic versus enthalpic interactions.

  10. Organic thin films. Rational synthesis of organic thin films with exceptional long-range structural integrity.

    PubMed

    Seiki, Noriya; Shoji, Yoshiaki; Kajitani, Takashi; Ishiwari, Fumitaka; Kosaka, Atsuko; Hikima, Takaaki; Takata, Masaki; Someya, Takao; Fukushima, Takanori

    2015-06-01

    Highly oriented, domain-boundary-free organic thin films could find use in various high-performance organic materials and devices. However, even with state-of-the-art supramolecular chemistry, it is difficult to construct organic thin films with structural integrity in a size regime beyond the micrometer length scale. We show that a space-filling design, relying on the two-dimensional (2D) nested hexagonal packing of a particular type of triptycene, enables the formation of large-area molecular films with long-range 2D structural integrity up to the centimeter length scale by vacuum evaporation, spin-coating, and cooling from the isotropic liquid of the triptycene. X-ray diffraction analysis and microscopic observations reveal that triptycene molecules form a completely oriented 2D (hexagonal triptycene array) + 1D (layer stacking) structure, which is key for the long-range propagation of structural order. PMID:26045433

  11. Readout Circuit System for In2O3/RGO Nanocomposite Gas Sensors

    NASA Astrophysics Data System (ADS)

    Lin, Cheng-Yi

    A readout circuit system for In2O3/RGO nanocomposite gas sensors using open-source software has been developed for the first time. The readout system adopts a Raspberry Pi as an electronic control unit and incorporates different electronics components to realize the function of a source measure unit (SMU). During the operation, real-time results of measured gas concentrations can be accessed through the Internet and alarm functions are also included. All control programs were written in Python language. Using this readout system, current response of gas sensors toward oxygen concentrations (2,000---32,000 ppm) in argon environment at 140 °C are in a good agreement with the data measured by Agilent SMU (B2902A). Furthermore, temperature effects and transient response of the proposed system are investigated. The success of this readout system demonstrates the potential use of open-source hardware to construct scientific instruments with the advantages of miniaturization, low cost, flexible design, and Internet access.

  12. Electrodeposited CulnSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1998-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  13. Electrodeposited CuInSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1997-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  14. Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

    SciTech Connect

    Genfa Wu; Anne-Marie Valente; H. Phillips; Haipeng Wang; Andy Wu; T. J. Renk; P Provencio

    2004-05-01

    An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV. The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.

  15. Antimony selenide thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang

    2016-06-01

    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  16. Micromagnetic studies of thin metallic films (invited)

    NASA Astrophysics Data System (ADS)

    Zhu, Jian-Gang; Bertram, H. Neal

    1988-04-01

    A computer simulation model has been developed to conduct micromagnetic studies of thin magnetic films. Thin-film media are modeled as a planar hexagonal array of hexagonally shaped grains. Each grain is a single domain particle whose magnetization reverses by coherent rotation. The computation utilizes coupled gyromagnetic dynamic equations with phenomenological Landau-Lifshitz damping. In particular, the effects of particle interactions are investigated. The effect of media microstructure on magnetic hysteresis is examined as well as the effect of intergranular exchange coupling. The difference between planar and completely random orientation of the crystalline anisotropy axes is discussed. Recorded transitions are simulated by allowing a pair of perfect transitions to relax. With no intergranular exchange coupling, the transitions show profound irregularity and zig-zag structure. Intergranular exchange coupling produces more uniform transitions with increased zig-zag structure amplitude. For a closely spaced transition pair, the equilibrium configuration yields percolated transition boundaries with stable reverse island domains. The effect of gyromagnetic precession also has been examined.

  17. thin films toward less leakage currents

    NASA Astrophysics Data System (ADS)

    Yao, Zhao; Wang, Cong; Li, Yang; Kim, Hong-Ki; Kim, Nam-Young

    2014-08-01

    To prepare high-density integrated capacitors with low leakage currents, 0.2-μm-thick BaTiO3 thin films were successfully deposited on integrated semiconductor substrates at room temperature by the aerosol deposition (AD) method. In this study, the effects of starting powder size were considered in an effort to remove macroscopic defects. A surface morphology of 25.3 nm and an interface roughness of less than 50 nm were obtained using BT-03B starting powder. The nano-crystalline thin films achieved after deposition were annealed at various temperatures to promote crystallization and densification. Moreover, the influence of rapid thermal annealing process on the surface morphology and crystal growth was evaluated. As the annealing temperature increased from room temperature to 650°C, the root mean square (RMS) roughness decreased from 25.3 to 14.3 nm. However, the surface was transformed into rough performance at 750°C, which agreed well with the surface microstructure trend. Moreover, the crystal growth also reveals the changes in surface morphology via surface energy analysis.

  18. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments Database

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

    1993-11-01

    Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

  19. Dynamic interfaces in an organic thin film

    PubMed Central

    Tao, Chenggang; Liu, Qiang; Riddick, Blake C.; Cullen, William G.; Reutt-Robey, Janice; Weeks, John D.; Williams, Ellen D.

    2008-01-01

    Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid on Ag(111), have been visualized in real time and measured quantitatively using scanning tunneling microscopy. The boundaries fluctuate via molecular exchange with exchange time constants of 10–30 ms at room temperature, with length-mode fluctuations that should yield characteristic f−1/2 signatures for frequencies less than ≈100 Hz. Although acridine-9-carboxylic acid has highly anisotropic intermolecular interactions, it forms islands that are compact in shape with crystallographically distinct boundaries that have essentially identical thermodynamic and kinetic properties. The physical basis of the modified symmetry is shown to arise from significantly different substrate interactions induced by alternating orientations of successive molecules in the condensed phase. Incorporating this additional set of interactions in a lattice–gas model leads to effective multicomponent behavior, as in the Blume–Emery–Griffiths model, and can straightforwardly reproduce the experimentally observed isotropic behavior. The general multicomponent description allows the domain shapes and boundary fluctuations to be tuned from isotropic to highly anisotropic in terms of the balance between intermolecular interactions and molecule–substrate interactions. PMID:18765797

  20. Optical thin film metrology for optoelectronics

    NASA Astrophysics Data System (ADS)

    Petrik, Peter

    2012-12-01

    The manufacturing of optoelectronic thin films is of key importance, because it underpins a significant number of industries. The aim of the European joint research project for optoelectronic thin film characterization (IND07) in the European Metrology Research Programme of EURAMET is to develop optical and X-ray metrologies for the assessment of quality as well as key parameters of relevant materials and layer systems. This work is intended to be a step towards the establishment of validated reference metrologies for the reliable characterization, and the development of calibrated reference samples with well-defined and controlled parameters. In a recent comprehensive study (including XPS, AES, GD-OES, GD-MS, SNMS, SIMS, Raman, SE, RBS, ERDA, GIXRD), Abou-Ras et al. (Microscopy and Microanalysis 17 [2011] 728) demonstrated that most characterization techniques have limitations and bottle-necks, and the agreement of the measurement results in terms of accurate, absolute values is not as perfect as one would expect. This paper focuses on optical characterization techniques, laying emphasis on hardware and model development, which determine the kind and number of parameters that can be measured, as well as their accuracy. Some examples will be discussed including optical techniques and materials for photovoltaics, biosensors and waveguides.

  1. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  2. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, B.E.; McLean, W. II

    1996-02-13

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  3. ``Verso'' laser cleaning of mechanically thin films

    NASA Astrophysics Data System (ADS)

    Barone, Alberto; Bloisi, Francesco; Vicari, Luciano

    2003-03-01

    In usual dry laser cleaning of opaque samples, short laser pulses are projected onto the sample surface to be cleaned. Energy transferred from light ejects extraneous particles away from the surface. Laser beam fluence is limited by the damage reached by high temperature that the sample surface can produce. We have experimentally shown that for thin samples, the thermo-elastic wave propagates within the whole sample thickness, thus also the rear surface, while temperature effects are limited to the front surface. Therefore, the proposed "verso" laser cleaning technique (the pulsed laser beam impinges on rear sample surface) can be applied to any opaque "mechanically thin" film and is useful for samples having delicate treatments on the surface to be cleaned (e.g. written paper, painted tiles, magnetic films). We have applied our technique to paper sheets showing that it is possible to efficiently clean the surface without damaging ink marks on it. Using a probe beam deflection (PBD) technique in both direct and reverse configuration we have shown that the "verso" cleaning effect is due to the higher penetration depth of the thermo-elastic wave with respect to the temperature profile propagation.

  4. Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression.

    PubMed

    Liu, Yong; Xu, Wei; Liu, Da-Bo; Yu, Meijuan; Lin, Yuan-Hua; Nan, Ce-Wen

    2015-05-01

    Ga doped In2O3-based thermoelectric materials were prepared by spark plasma sintering (SPS) using sintered powders in the low temperature solid phase. The solubility of Ga in In2O3 is about 10 at%, much larger than other elements such as Ge, Ce, etc. The larger solubility of Ga allows us to optimize the thermal and electrical transport properties of Ga doped In2O3 in a wider window. While tuning the concentration of dopants, the thermoelectric performance of Ga doped In2O3 was enhanced through a synergistic approach combining band-gap engineering and phonon suppression. The power factor increases from ∼0.5 × 10(-4) to ∼9.6 × 10(-4) W mK(-2) at 700 °C while thermal conductivity reduces from ∼4 to ∼2 W mK(-1) at 700 °C in In1.9Ga0.1O3. The maximum ZT of 0.37, increased by a factor of 4 from the pristine In2O3, is achieved in In1.9Ga0.1O3 at 700 °C. PMID:25829235

  5. Band gap and electronic structure of cubic, rhombohedral, and orthorhombic In2O3 polymorphs: Experiment and theory

    NASA Astrophysics Data System (ADS)

    de Boer, T.; Bekheet, M. F.; Gurlo, A.; Riedel, R.; Moewes, A.

    2016-04-01

    Recent studies on In2O3 have revealed a rich phase diagram and have led to the discovery of new In2O3 polymorphs, including the synthesis and ambient recovery of Pbcn In2O3 . The electronic properties of this new phase are studied together with other better-known polymorphs (I a 3 ¯ and R 3 ¯c ) using soft x-ray absorption and emission spectroscopy, directly probing the partial density of states and transition matrix elements. Together with complementary full-potential all-electron density functional theory calculations, this allows important material parameters, such as the electronic band gap and partial density of states, to be elucidated. Excellent agreement between experiment and theory is obtained, with band gaps of 3.2 ±0.3 ,3.1 ±0.3 , and 2.9 ±0.3 eV determined for the I a 3 ¯ , R 3 ¯c , and Pbcn In2O3 polymorphs, respectively. The effective mass of carriers in Pbcn In2O3 is predicted to be 12% less than in the widely used I a 3 ¯ polymorph while having a similar effective optical band gap.

  6. Ti-Cr-Al-O Thin Film Resistors

    SciTech Connect

    Jankowski, A F; Hayes, J P

    2002-03-21

    Thin films of Ti-Cr-Al-O are produced for use as an electrical resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O{sub 2}. Vertical resistivity values from 10{sup 4} to 10{sup 10} Ohm-cm are measured for Ti-Cr-Al-O films. The film resistivity can be design selected through control of the target composition and the deposition parameters. The Ti-Cr-Al-O thin film resistor is found to be thermally stable unlike other metal-oxide films.

  7. Method of improving field emission characteristics of diamond thin films

    DOEpatents

    Krauss, Alan R.; Gruen, Dieter M.

    1999-01-01

    A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

  8. The role of microstructural phenomena in magnetic thin films

    SciTech Connect

    Laughlin, D.E.; Lambeth, D.N.

    1992-12-31

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  9. The role of microstructural phenomena in magnetic thin films

    SciTech Connect

    Laughlin, D.E.; Lambeth, D.N.

    1992-01-01

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  10. Method of improving field emission characteristics of diamond thin films

    DOEpatents

    Krauss, A.R.; Gruen, D.M.

    1999-05-11

    A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

  11. The role of microstructural phenomena in magnetic thin films

    NASA Astrophysics Data System (ADS)

    Laughlin, D. E.; Lambeth, D. N.

    Magnetic recording media is studied. Results during the first 2 years are presented under the following headings: atomic resolution transmission electron microscopy (TEM) of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The high resolution electron microscopy (HREM) results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  12. Microstructural and mechanical characteristics of Ni–Cr thin films

    SciTech Connect

    Petley, Vijay; Sathishkumar, S.; Thulasi Raman, K.H.; Rao, G.Mohan; Chandrasekhar, U.

    2015-06-15

    Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.

  13. Use of thin films in high-temperature superconducting bearings.

    SciTech Connect

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  14. Reactive thin film flows over spinning discs

    NASA Astrophysics Data System (ADS)

    Zhao, Kun; Wray, Alex; Yang, Junfeng; Matar, Omar

    2015-11-01

    We consider the dynamics of a thin film flowing over a spinning disc in the presence of a chemical reaction, and associated heat and mass transfer. We use a boundary-layer approximation in conjunction with the Karman-Polhausen approximation for the velocity distribution in the film to derive a set of coupled one-dimensional evolution equations for the film thickness, radial and azimuthal flow rates, concentration of the reagents and products, and temperature. These highly nonlinear partial differential equations are solved numerically to reveal the formation of large-amplitude waves that travel from the disc inlet to its periphery. The influence of these waves on the concentration and temperature profiles is analysed for a wide range of system parameters: the Damkohler and Schmidt numbers, the thermal Peclet numbers, and the dimensionless disc radius (a surrogate for the Eckman number). It is shown that these waves lead to significant enhancement of the rates of heat and mass transfer associated with the reactive flow; these are measured by tracking the temporal evolution of local and spatially-averaged Nusselt and Sherwood numbers, respectively. EPSRC Programme Grant, MEMPHIS, EP/K0039761/1.

  15. Controlled nanostructuration of polycrystalline tungsten thin films

    SciTech Connect

    Girault, B.; Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O.; Sauvage, T.

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  16. Vertically aligned biaxially textured molybdenum thin films

    SciTech Connect

    Krishnan, Rahul; Riley, Michael; Lee, Sabrina; Lu, Toh-Ming

    2011-09-15

    Vertically aligned, biaxially textured molybdenum nanorods were deposited using dc magnetron sputtering with glancing flux incidence (alpha = 85 degrees with respect to the substrate normal) and a two-step substrate-rotation mode. These nanorods were identified with a body-centered cubic crystal structure. The formation of a vertically aligned biaxial texture with a [110] out-of-plane orientation was combined with a [-110] in-plane orientation. The kinetics of the growth process was found to be highly sensitive to an optimum rest time of 35 seconds for the two-step substrate rotation mode. At all other rest times, the nanorods possessed two separate biaxial textures each tilted toward one flux direction. While the in-plane texture for the vertical nanorods maintains maximum flux capture area, inclined Mo nanorods deposited at alpha = 85 degrees without substrate rotation display a [-1-1-4] in-plane texture that does not comply with the maximum flux capture area argument. Finally, an in situ capping film was deposited with normal flux incidence over the biaxially textured vertical nanorods resulting in a thin film over the porous nanorods. This capping film possessed the same biaxial texture as the nanorods and could serve as an effective substrate for the epitaxial growth of other functional materials.

  17. Amorphous molybdenum silicon superconducting thin films

    SciTech Connect

    Bosworth, D. Sahonta, S.-L.; Barber, Z. H.; Hadfield, R. H.

    2015-08-15

    Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using W{sub x}Si{sub 1−x}, though other amorphous superconductors such as molybdenum silicide (Mo{sub x}Si{sub 1−x}) offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc) reaches a maximum of 7.6 K at a composition of Mo{sub 83}Si{sub 17}. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz), there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  18. Oxynitride Thin Film Barriers for PV Packaging

    SciTech Connect

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  19. Pressureless Bonding Using Sputtered Ag Thin Films

    NASA Astrophysics Data System (ADS)

    Oh, Chulmin; Nagao, Shijo; Suganuma, Katsuaki

    2014-12-01

    To improve the performance and reliability of power electronic devices, particularly those built around next-generation wide-bandgap semiconductors such as SiC and GaN, the bonding method used for packaging must change from soldering to solderless technology. Because traditional solders are problematic in the harsh operating conditions expected for emerging high-temperature power devices, we propose a new bonding method in this paper, namely a pressureless, low-temperature bonding process in air, using abnormal grain growth on sputtered Ag thin films to realize extremely high temperature resistance. To investigate the mechanisms of this bonding process, we characterized the microstructural changes in the Ag films over various bonding temperatures and times. We measured the bonding properties of the specimens by a die-shear strength test, as well as by x-ray diffraction measurements of the residual stress in the Ag films to show how the microstructural developments were essential to the bonding technology. Sound bonds with high die strength can be achieved only with abnormal grain growth at optimum bonding temperature and time. Pressureless bonding allows for production of reliable high-temperature power devices for a wide variety of industrial, energy, and environmental applications.

  20. Eutectic bonds on wafer scale by thin film multilayers

    NASA Astrophysics Data System (ADS)

    Christensen, Carsten; Bouwstra, Siebe

    1996-09-01

    The use of gold based thin film multilayer systems for forming eutectic bonds on wafer scale is investigated and preliminary results will be presented. On polished 4 inch wafers different multilayer systems are developed using thin film techniques and bonded afterwards under reactive atmospheres and different bonding temperatures and forces. Pull tests are performed to extract the bonding strengths.

  1. Applications of Thin Film Thermocouples for Surface Temperature Measurement

    NASA Technical Reports Server (NTRS)

    Martin, Lisa C.; Holanda, Raymond

    1994-01-01

    Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.

  2. Tools to Synthesize the Learning of Thin Films

    ERIC Educational Resources Information Center

    Rojas, Roberto; Fuster, Gonzalo; Slusarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase…

  3. Progress in polycrystalline thin-film solar cells

    SciTech Connect

    Zweibel, K; Hermann, A; Mitchell, R

    1983-07-01

    Photovoltaic devices based on several polycrystalline thin-film materials have reached near and above 10% sunlight-to-electricity conversion efficiencies. This paper examines the various polycrystalline thin-film PV materials including CuInSe/sub 2/ and CdTe in terms of their material properties, fabrication techniques, problems, and potentials.

  4. Design of Selective Gas Sensors Using Additive-Loaded In2O3 Hollow Spheres Prepared by Combinatorial Hydrothermal Reactions

    PubMed Central

    Kim, Sun-Jung; Hwang, In-Sung; Kang, Yun Chan; Lee, Jong-Heun

    2011-01-01

    A combinatorial hydrothermal reaction has been used to prepare pure and additive (Sb, Cu, Nb, Pd, and Ni)-loaded In2O3 hollow spheres for gas sensor applications. The operation of Pd- and Cu-loaded In2O3 sensors at 371 °C leads to selective H2S detection. Selective detection of CO and NH3 was achieved by the Ni-In2O3 sensor at sensing temperatures of 371 and 440 °C, respectively. The gas responses of six different sensors to NH3, H2S, H2, CO and CH4 produced unique gas sensing patterns that can be used for the artificial recognition of these gases. PMID:22346661

  5. Fracture of nanoporous organosilicate thin films

    NASA Astrophysics Data System (ADS)

    Gage, David Maxwell

    Nanoporous organosilicate thin films are attractive candidates for a number of emerging technologies, ranging from biotechnology to optics and microelectronics. However, integration of these materials is challenged by their fragile nature and susceptibility to mechanical failure. Debonding and cohesive cracking of the organosilicate film are principal concerns that threaten the reliability and yield of device structures. Despite the intense interest in these materials, there is currently a need for greater understanding of the relationship between glass structure and thermomechanical integrity. The objective of this research was to investigate strategies for improving mechanical performance through variations in film chemistry, process conditions, and pore morphology. Several approaches to effecting improvements in elastic and fracture properties were examined in depth, including post-deposition curing, molecular reinforcement using hydrocarbon network groups, and manipulation of pore size and architecture. Detailed structural characterization was employed along with quantitative fracture mechanics based testing methods. It was shown that ultra-violet irradiation and electron bombardment post-deposition treatments can significantly impact glass structure in ways that cannot be achieved through thermal activation alone. Both techniques demonstrated high porogen removal efficiency and enhanced the glass matrix through increased network connectivity and local bond rearrangements. The increases in network connectivity were achieved predominantly through the replacement of terminal groups, particularly methyl and silanol groups, with Si-O network bonds. Nuclear magnetic resonance spectroscopy was shown to be a powerful and quantitative method for gaining new insight into the underlying cure reactions and mechanisms. It was demonstrated that curing leads to significant progressive enhancement of elastic modulus and adhesive fracture energies due to increased network bond

  6. Effect of film thickness and texture morphology on the physical properties of lead sulfide thin films

    NASA Astrophysics Data System (ADS)

    Azadi Motlagh, Z.; Azim Araghi, M. E.

    2016-02-01

    Lead sulfide (PbS) thin films were prepared onto ultra-clean quartz substrate by the electron beam gun (EBG) evaporation method. The thicknesses of the thin films were 50, 100, 150 and 200 nm. They were annealed at 423 K for 2 h. Field emission scanning electron microscopy (FESEM) images of the thin films showed their texture morphology at the surface of the quartz substrate. X-ray diffraction (XRD) patterns of the thin films showed that they have a cubic phase and rock-salt structure after annealing. The average crystallite size for the thin films was in the range of 32-100 nm. Optical measurements confirmed that crystalline thin films have a direct band gap that increases by decreasing the film thickness. This blue shift of the band gap of thin films compared to the bulk structure can be attributed to the quantum confinement effects in the nanoparticles. A decrease in conductivity by increasing the temperature confirmed the positive temperature coefficient of resistance in the thin films that showed the dominant conduction mechanism is via a band-like transition. The density of localized states at the Fermi level increases by increasing the film thickness. Current-voltage behavior of the thin films showed an increase in both dark current and photocurrent by increasing the crystallite size which is discussed, based on the presence of trap states and barriers in nanostructures.

  7. Bulk and surface characterization of In2O3(001) single crystal

    SciTech Connect

    Hagleitner, D.; Jacobson, Peter; Blomberg, Sara; Schulte, Karina; Lundgren, Edvin; Kubicek, Markus; Fleig, Jürgen; Kubel, Frank; Puls, Christoph; Limbeck, Andreas; Hutter, Herbert; Boatner, Lynn A; Schmid, M.; Diebold, U.

    2012-01-01

    A comprehensive bulk and surface investigation of high-quality In2O3(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. ICP-MS measurements reveal small residues of Pb, Mg and Pt in the crystals. Four-point-probe measurements show a resistivity of 2 0.5 105 cm, which translates into a carrier concentration of 1012 cm-3. The results from X-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5) from the previously accepted value of 10.117 . Scanning Tunneling Microscopy (STM) images of a reduced (sputtered/annealed) surface show a step height of 5 , which indicates a preference for one type of surface termination. A combination of low-energy ion scattering (LEIS) and atomically resolved STM indicates an indium-terminated surface with small islands of 2.5 height, which corresponds to a strongly distorted indium lattice. Scanning Tunneling Spectroscopy (STS) reveals a pronounced surface state at the Fermi Level (EF). Photoelectron Spectroscopy (PES) shows additional, deep-lying band gap states, which can be removed by exposure of the surface to activated oxygen. Oxidation also results in a shoulder at the O 1s core level at a higher binding energy, possibly indicative of a surface peroxide species. A downward band bending of 0.4 eV and an upward band bending of ~0.1 eV is observed for the reduced and oxidized surfaces, respectively.

  8. A Model for Tear Film Thinning With Osmolarity and Fluorescein

    PubMed Central

    Braun, Richard J.; Gewecke, Nicholas R.; Begley, Carolyn G.; King-Smith, P. Ewen; Siddique, Javed I.

    2014-01-01

    Purpose. We developed a mathematical model predicting dynamic changes in fluorescent intensity during tear film thinning in either dilute or quenching regimes and we model concomitant changes in tear film osmolarity. Methods. We solved a mathematical model for the thickness, osmolarity, fluorescein concentration, and fluorescent intensity as a function of time, assuming a flat and spatially uniform tear film. Results. The tear film thins to a steady-state value that depends on the relative importance of the rates of evaporation and osmotic supply, and the resulting increase of osmolarity and fluorescein concentrations are calculated. Depending on the initial thickness, the rate of osmotic supply and the tear film thinning rate, the osmolarity increase may be modest or it may increase by as much as a factor of eight or more from isosmotic levels. Regarding fluorescent intensity, the quenching regime occurs for initial concentrations at or above the critical fluorescein concentration where efficiency dominates, while lower concentrations show little change in fluorescence with tear film thinning. Conclusions. Our model underscores the importance of using fluorescein concentrations at or near the critical concentration clinically so that quenching reflects tear film thinning and breakup. In addition, the model predicts that, depending on tear film and osmotic factors, the osmolarity within the corneal compartment of the tear film may increase markedly during tear film thinning, well above levels that cause marked discomfort. PMID:24458153

  9. Tailoring Thin Film-Lacquer Coatings for Space Application

    NASA Technical Reports Server (NTRS)

    Peters, Wanda C.; Harris, George; Miller, Grace; Petro, John

    1998-01-01

    Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's thermal control requirements, there is often a need for a variation of solar absorptance (Alpha(s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of Alpha(s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

  10. Physical properties in thin films of iron oxides.

    SciTech Connect

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Girata, D.; Morales, A. L.; Hoffmann, A.; Materials Science Division; Univ. de Antioquia

    2008-01-01

    We have grown hematite ({alpha}-Fe{sub 2}O{sub 3}) thin films on stainless steel substrates and magnetite (Fe{sub 3}O{sub 4}) thin films on (0 0 1)-Si single crystal substrates by a RF magnetron sputtering process. {alpha}-Fe{sub 2}O{sub 3} thin films were grown in an Ar atmosphere at substrate temperatures around 400 C, and Fe{sub 3}O{sub 4} thin films in an Ar/O{sub 2} reactive atmosphere at substrate temperatures around 500 C. Conversion electron Moessbauer (CEM) spectra of {alpha}-Fe{sub 2}O{sub 3} thin films exhibit values for hyperfine parameter characteristic of the hematite stoichiometric phase in the weak ferromagnetic state [R.E. Vandenberghe, in: Moessbauer Spectroscopy and Applications in Geology, University Gent, Belgium, 1990. [1

  11. Microstructural evolution during stress relaxation of gold thin films

    NASA Astrophysics Data System (ADS)

    Syarbaini, Luthfia Amra

    Microstructure evolution in metal thin films for use in microelectronic devices was studied due to the formation of defects such as whiskers and hillocks that may cause problems in electrical circuits. Thin film stress relaxation can occur through a variety of processes. Understanding such mechanisms and the conditions under which certain mechanism dominate can potentially lead to the improved control of thin film stability. Studies of the 3D microstructural changes in Au thin films on silicon and other substrates with different thermal expansion coefficients aid us in understanding thin film relaxation phenomena such as hillock/whisker formation. Techniques such as in-situ scanning electron microscopy (SEM) heating and cooling experiments, electron backscattered diffraction (EBSD), focus ion beam (FIB) cross sections and atomic force microscopy (AFM) enabled us to quantify the kinetic relationships between relaxation mechanisms and local morphological changes.

  12. Development of Thin-Film Battery Powered Transdermal Medical Devices

    SciTech Connect

    Bates, J.B.; Sein, T.

    1999-07-06

    Research carried out at ORNL has led to the development of solid state thin-film rechargeable lithium and lithium-ion batteries. These unique devices can be fabricated in a variety of shapes and to any required size, large or small, on virtually any type of substrate. Because they have high energies per unit of volume and mass and because they are rechargeable, thin-film lithium batteries have potentially many applications as small power supplies in consumer and special electronic products. Initially, the objective of this project was to develop thin-film battery powered products. Initially, the objective of this project was to develop thin-film battery powered transdermal electrodes for recording electrocardiograms and electroencephalograms. These ''active'' electrode would eliminate the effect of interference and improve the reliability in diagnosing heart or brain malfunctions. Work in the second phase of this project was directed at the development of thin-film battery powered implantable defibrillators.

  13. Nonlinear optical microscopy for imaging thin films and surfaces

    SciTech Connect

    Smilowitz, L.B.; McBranch, D.W.; Robinson, J.M.

    1995-03-01

    We have used the inherent surface sensitivity of second harmonic generation to develop an instrument for nonlinear optical microscopy of surfaces and interfaces. We have demonstrated the use of several nonlinear optical responses for imaging thin films. The second harmonic response of a thin film of C{sub 60} has been used to image patterned films. Two photon absorption light induced fluorescence has been used to image patterned thin films of Rhodamine 6G. Applications of nonlinear optical microscopy include the imaging of charge injection and photoinduced charge transfer between layers in semiconductor heterojunction devices as well as across membranes in biological systems.

  14. Method of producing solution-derived metal oxide thin films

    DOEpatents

    Boyle, Timothy J.; Ingersoll, David

    2000-01-01

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  15. Fully Solution-Processed and Foldable Metal-Oxide Thin-Film Transistor.

    PubMed

    Lee, Su Jeong; Ko, Jieun; Nam, Ki-Ho; Kim, Taehee; Lee, Sang Hoon; Kim, Jung Han; Chae, Gee Sung; Han, Hs; Kim, Youn Sang; Myoung, Jae-Min

    2016-05-25

    Flexible and foldable thin-film transistors (TFTs) have been widely studied with the objective of achieving high-performance and low-cost flexible TFTs for next-generation displays. In this study, we introduced the fabrication of foldable TFT devices with excellent mechanical stability, high transparency, and high performance by a fully solution process including PI, YOx, In2O3, SWCNTs, IL-PVP, and Ag NWs. The fabricated fully solution-processed TFTs showed a higher transmittance above 86% in the visible range. Additionally, the charge-carrier mobility and Ion/Ioff ratio of them were 7.12 ± 0.43 cm(2)/V·s and 5.53 ± 0.82 × 10(5) at a 3 V low voltage operating, respectively. In particular, the fully solution-processed TFTs showed good electrical characteristics under tensile strain with 1 mm bending and even extreme folding up to a strain of 26.79%. Due to the good compatibility of each component layer, it maintained the charge-carrier mobility over 79% of initial devices after 5,000 cycles of folding test in both the parallel and perpendicular direction with a bending radius of 1 mm. These results show the potential of the fully solution-processed TFTs as flexible TFTs for a next generation devices because of the robust mechanical flexibility, transparency, and high electrical performance of it. PMID:27120010

  16. Porous thin films of functionalized mesoporous silica nanoparticles.

    PubMed

    Kobler, Johannes; Bein, Thomas

    2008-11-25

    The synthesis of extremely small mesoporous silica nanoparticles via a specific co-condensation process with phenyl groups is demonstrated. The suspensions are ideally suited for the production of nanoscale thin films by spin-coating. Thanks to the small particle size and the resulting low surface roughness, the films show excellent optical qualities and exhibit good diffusion properties and a highly accessible pore system. The availability of such homogeneous porous thin films made it possible to use ellipsometric porosimetry (EP) as a convenient method to determine the effective porosity of the films on their original support without destroying it. It was possible to record sorption isotherms of the thin films with ellipsometry and to correlate the data with nitrogen sorption data of dried powders of the same material. The thin films showed very low refractive indices of around 1.2. PMID:19206399

  17. Thermally induced optical nonlinearity during transient heating of thin films

    SciTech Connect

    Chen, G. ); Tien, C.L. )

    1994-05-01

    This work studies the temperature field and the optical response of weakly absorbing thin films with thermally induced optical nonlinearity during picosecond to nanosecond pulsed-laser heating. A one-dimensional model is presented that examines the effects of the temperature dependent optical constants and the nonuniform absorption caused by interference. The energy equation is solved numerically, coupled with the matrix method in optical multilayer theory. Both cadmium sulfide (CdS) thin films and a zinc selenide (ZnSe) interference filter are considered. The computational results compare favorably with available experimental data on the ZnSe interference filter. This study shows that the transient temperature distributions in the films are highly nonuniform. Such nonuniformity yields Airy's formulae for calculating the thin-film reflectance and transmittance inapplicable. Applications of the work include optical bistability, localized change of the film structure, and measurement of the thermal diffusivity of thin films. 31 refs., 7 figs., 1 tab.

  18. A versatile platform for magnetostriction measurements in thin films

    NASA Astrophysics Data System (ADS)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  19. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    PubMed

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses <100 nm were grown at 3 and 10 °C between 0.5 and 3 h, with mean grain sizes between ∼20 and 30 nm. The method is compatible with plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces. PMID:24999923

  20. An overview of thin film nitinol endovascular devices.

    PubMed

    Shayan, Mahdis; Chun, Youngjae

    2015-07-01

    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications. PMID:25839120

  1. Characterization of reliability of printed indium tin oxide thin films.

    PubMed

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments. PMID:24245331

  2. Altering properties of cerium oxide thin films by Rh doping

    SciTech Connect

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír; and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  3. Interconnected Si nanocrystals forming thin films with controlled bandgap values

    SciTech Connect

    Nychyporuk, T.; Zakharko, Yu.; Lysenko, V.; Lemiti, M.

    2009-08-24

    Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust nanoparticle growth. Structural and optical properties of the deposited nanostructured films are described in details. These nanocrystalline Si thin films seem to be promising candidates for all-Si tandem solar cell applications.

  4. Thin film coatings for space electrical power system applications

    NASA Technical Reports Server (NTRS)

    Gulino, Daniel A.

    1989-01-01

    This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

  5. Thin film coatings for space electrical power system applications

    NASA Technical Reports Server (NTRS)

    Gulino, Daniel A.

    1988-01-01

    This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

  6. Fabricating Thin-Film High-Temperature Thermoset Resins

    NASA Technical Reports Server (NTRS)

    Dickerson, G. E.; Long, E. R. J.; Kitts, R., G.

    1982-01-01

    To prepare an epoxy thin film, quantity of uncured epoxy to be cast placed in vacuum oven and heated to melting temperature. Vacuum of about 30 mm Hg is applied to deaerate epoxy charge. Pressure is cycled with each foaming until all air and excess volatiles are revoved. thermoset (cross-linked) resin is cast between thin, flexible, releasing substrate films. Films less than 0.025 mm in thickness are made routinely with this facility.

  7. Stress distribution in Si under patterned thin film structures

    SciTech Connect

    Wong, S.P.; Huang, L.; Guo, W.S.; Cheung, W.Y.; Zhao, S.

    1997-05-01

    The authors have employed the infrared photoelasticity (PE) method to study the stress distribution in Si substrates under patterned thin film structures such as thermal oxide layers partially covered by metal films and oxide layers with long trench openings. It is demonstrated that a lot of information on the two dimensional stress distribution in the substrate under patterned thin film structures can be obtained from PE experiments. The capability, limitation, and further development of the PE method for semiconductor applications are discussed.

  8. Phase-modulated beams technique for thin photorefractive films characterization

    NASA Astrophysics Data System (ADS)

    Barmenkov, Yu. O.; Kir'yanov, A. V.; Starodumov, A. N.; Kozhevnikov, N. M.; Lemmetyinen, H.

    2000-04-01

    The phase-modulated beams technique is developed for nonlinear thin photorefractive films characterization. In the Raman-Nath diffraction approximation, the formulas are deduced, allowing us to measure the amplitude of phase grating recorded in a film and its nonlinear refractive index n2. The method is applied for studying Langmuir-Blodgett multilayer thin (˜0.6 μm) films of Bacteriorhodopsin at wavelength 633 nm.

  9. Thin film adhesion by nanoindentation-induced superlayers. Final report

    SciTech Connect

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  10. Transferable and flexible thin film devices for engineering applications

    NASA Astrophysics Data System (ADS)

    Mutyala, Madhu Santosh K.; Zhou, Jingzhou; Li, Xiaochun

    2014-05-01

    Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc. However, these thin film sensors/devices are normally fabricated on rigid silicon substrates, thus neither flexible nor transferrable for engineering applications. This paper reports an innovative approach to transfer polyimide (PI) embedded thin film devices, which were fabricated on glass, to thin metal foils. Thin film thermocouples (TFTCs) were fabricated on a thin PI film, which was spin coated and cured on a glass substrate. Another layer of PI film was then spin coated again on TFTC/PI and cured to obtain the embedded TFTCs. Assisted by oxygen plasma surface coarsening of the PI film on the glass substrate, the PI embedded TFTC was successfully transferred from the glass substrate to a flexible copper foil. To demonstrate the functionality of the flexible embedded thin film sensors, they were transferred to the sonotrode tip of an ultrasonic metal welding machine for in situ process monitoring. The dynamic temperatures near the sonotrode tip were effectively measured under various ultrasonic vibration amplitudes. This technique of transferring polymer embedded electronic devices onto metal foils yield great potentials for numerous engineering applications.

  11. The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

    NASA Astrophysics Data System (ADS)

    Harris Odum, Nicole Latrice

    Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

  12. Patterns and conformations in molecularly thin films

    NASA Astrophysics Data System (ADS)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  13. Amperometric noise at thin film band electrodes.

    PubMed

    Larsen, Simon T; Heien, Michael L; Taboryski, Rafael

    2012-09-18

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive polymers and measured the current noise in physiological buffer solution for a wide range of different electrode areas. The noise measurements could be modeled by an analytical expression, representing the electrochemical cell as a resistor and capacitor in series. The studies revealed three domains; for electrodes with low capacitance, the amplifier noise dominated, for electrodes with large capacitances, the noise from the resistance of the electrochemical cell was dominant, while in the intermediate region, the current noise scaled with electrode capacitance. The experimental results and the model presented here can be used for choosing an electrode material and dimensions and when designing chip-based devices for low-noise current measurements. PMID:22928986

  14. In-situ thin films by MOCVD

    SciTech Connect

    Norris, P.E.; Orlando, G.W. )

    1990-01-01

    This paper reports on the growth of high quality yttrium barium copper oxide (YBCO) thin films by MOCVD. Three MOCVD processes have been studied: a two-step (growth/post anneal) process requiring O{sub 2} anneal at 950--980 C, an in-situ (one step, no post growth anneal) process at 800--850 C and a plasma-enhanced, in-situ process (PE-MOCVD), which is operable at still lower substrate temperatures. The in-situ PE-MOCVD process is of great interest since, to a substantial degree, the growth temperature determines the degree of compatibility of a process with substrate materials and existing device technologies, such as VLSI-SilicoVLSI-Silicon.

  15. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  16. Glow discharge plasma deposition of thin films

    DOEpatents

    Weakliem, Herbert A.; Vossen, Jr., John L.

    1984-05-29

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  17. Characterization of lithium phosphorous oxynitride thin films

    SciTech Connect

    Yu, Xiaohua; Bates, J.B.; Jellison, G.E. Jr.

    1996-01-01

    Electrical and electrochemical properties of an amorphous thin-film lithium electrolyte, lithium phosphorous oxynitride (Lipon), have been studied with emphasis on the stability window vs Li metal and the behavior of the Li/Lipon interface. Ion conductivity of Lipon exhibits Arrhenius behavior at {minus}26 to +140 C, with a conductivity of 1.7 {times} 10{sup {minus}6}S/cm at 25 C and an activity energy of 0.50 {plus_minus} 0.01 eV. A stability window of 5.5 V was observed with respect to a Li{sup +}/Li reference, and no detectable reaction or degradation was evident at the Li/Lipon interface upon lithium cycling.

  18. Electrochromism: from oxide thin films to devices

    NASA Astrophysics Data System (ADS)

    Rougier, A.; Danine, A.; Faure, C.; Buffière, S.

    2014-03-01

    In respect of their adaptability and performance, electrochromic devices, ECDs, which are able to change their optical properties under an applied voltage, have received significant attention. Target applications are multifold both in the visible region (automotive sunroofs, smart windows, ophthalmic lenses, and domestic appliances (oven, fridge…)) and in the infrared region (Satellites Thermal Control, IR furtivity). In our group, focusing on oxide thin films grown preferentially at room temperature, optimization of ECDs performances have been achieved by tuning the microstructure, the stoichiometry and the cationic composition of the various layers. Herein, our approach for optimized ECDs is illustrated through the example of WO3 electrochromic layer in the visible and in the IR domain as well as ZnO based transparent conducting oxide layer. Targeting the field of printed electronics, simplification of the device architecture for low power ECDs is also reported.

  19. Nanocrystalline silicon thin films for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Queen, Daniel; Jugdersuren, Battogtokh; Culberston, Jim; Wang, Qi; Nemeth, William; Metcalf, Tom; Liu, Xiao

    2014-03-01

    Recent advances in thermoelectric materials have come from reductions in thermal conductivity by manipulating both chemical composition and nanostructure to limit the phonon mean free path. However, wide spread applications for some of these materials may be limited due to high raw material and integration costs. In this talk we will discuss our recent results on nanocrystalline silicon thin films deposited by both hot-wire and plasma enhanced chemical vapor deposition where the nanocrystal size and crystalline volume fraction are varied by dilution of the silane precursor gas with hydrogen. Nanocyrstalline silicon is an established material technology used in multijunction amorphous silicon solar cells and has the potential to be a low cost and scalable material for use in thermoelectric devices. This work supported by the Office of Naval Research and the National Research Council.

  20. Mesoscopic thin-film magnetic rings (invited)

    NASA Astrophysics Data System (ADS)

    Ross, C. A.; Castaño, F. J.; Morecroft, D.; Jung, W.; Smith, Henry I.; Moore, T. A.; Hayward, T. J.; Bland, J. A. C.; Bromwich, T. J.; Petford-Long, A. K.

    2006-04-01

    The magnetic properties and magnetoresistance of thin-film circular and elliptical magnetic rings made from Co, NiFe, NiFe/FeMn, and Co/Cu/NiFe have been explored. Single-layer rings show stable onion and vortex states and metastable twisted states containing a 360° wall. For NiFe rings, four-point magnetotransport results can be explained quantitatively by anisotropic magnetoresistance. NiFe/FeMn exchange-biased rings show offset hysteresis loops, and the easy axis is determined by a combination of the ring ellipticity and the exchange coupling. In Co/Cu/NiFe multilayer rings the behavior is dominated by the magnetostatic coupling between the domain walls in the Co and NiFe. In the major loop the giant magnetoresistance varies between three distinct levels corresponding to combinations of onion and vortex states in the NiFe and Co layers.