Sample records for indium 113

  1. In vivo red blood cell compatibility testing using indium-113m tropolone-labeled red blood cells

    SciTech Connect

    Morrissey, G.J.; Gravelle, D.; Dietz, G.; Driedger, A.A.; King, M.; Cradduck, T.D.

    1988-05-01

    In vivo radionuclide crossmatch is a method for identifying compatible blood for transfusion when allo- or autoantibodies preclude the use of conventional crossmatching techniques. A technique for labeling small volumes of donor red blood cells with (/sup 113m/In)tropolone is reported. The use of /sup 113m/In minimizes the accumulation of background radioactivity and the radiation dose especially so when multiple crossmatches are performed. Labeling red cells with (/sup 113m/In)tropolone is faster and easier to perform than with other radionuclides. Consistently high labeling efficiencies are obtained and minimal /sup 113m/In activity elutes from the labeled red blood cells. A case study involving 22 crossmatches is presented to demonstrate the technique. The radiation dose equivalent from /sup 113m/In is significantly less than with other radionuclides that may be used to label red cells.

  2. Some applications of the indium-113m-transferrin technique for gamma-radiation detection of microvascular effects of serotonin and ischemia.

    PubMed

    Hultkvist, U; Westergren, G; Norrgren, K; Lewan, L

    1987-01-01

    The distribution of systematically injected In-113m (t1/2 = 100 min) in organs of the rat was analyzed, and the use of the isotope for in vivo and in vitro gamma-radiation detection studies of blood plasma protein extravasation was demonstrated in skin, muscle, and tumor. In-113m was slowly excreted from rats. One to 6 h after injection the blood held 3% and 2%, respectively, of injected radioactivity/g tissue wet weight; skin and muscle held 0.1%-0.2%/g; liver, colon, and spleen held approximately 1%/g; lungs 1.5%-1.3%/g and kidneys 2.8%-3.3%/g. Scintillation camera technique revealed 40%-80% extraaccumulation of In-113m in a control extremity upon local administration of serotonin and 20%-40% in an extremity with a transplanted tumor, thus indicating a lower effect of serotonin in tumor microvascular circulation than in muscle and skin. In vitro detection of In-113m radiation by a well-counter in dissected tissues showed no effects of serotonin in the tumor and a four- to five-fold increase of radioactivity in muscle and skin, thus confirming blood protein extravasation upon serotonin treatment in these tissues. External analyses of In-113m in the vascular system using one miniaturized probe directed toward an area of interest showed that the method was too sensitive to movements of the animal, and second probe directed toward a control area is needed. PMID:3575883

  3. DPLACEMENT ISOTOPIQUE DANS LE SPECTRE DE L'INDIUM I (1) Par DEREK A. JACKSON.

    E-print Network

    Paris-Sud XI, Université de

    459. DÃ?PLACEMENT ISOTOPIQUE DANS LE SPECTRE DE L'INDIUM I (1) Par DEREK A. JACKSON. Laboratoire A. - La structure hyperfine dans le spectre d'arc, et dans le premier spectre d'6tincelle de 1'indium'intensit6 (1'indium naturel contient seu- lement 4,1 % de 113In) conduisant a des raies de 113In trop

  4. LE JOURNAL DE PHYSIQUE STRUCTURE HYPERFINE DANS LE SPECTRE DE L'INDIUM II

    E-print Network

    Paris-Sud XI, Université de

    LE JOURNAL DE PHYSIQUE ET LE RADIUM STRUCTURE HYPERFINE DANS LE SPECTRE DE L'INDIUM II Par D. A. JACKSON, Laboratoire Aimé-Cotton, C. N. R. S., Bellevue (Seine-et-Oise). TOME 18 No 8 MARS 1957 L'indium utilise dans la cathode creuse etait de 1'indium naturel contenant 96 % de 115In et 4 % de 113In ; on n

  5. Indium fluoride glass fibers

    NASA Astrophysics Data System (ADS)

    Saad, Mohammed

    2012-03-01

    Fluoride glasses are the only material that transmit light from ultraviolet to mid-infrared and can be drawn into industrial optical fibers. The mechanical and optical properties of new indium fluoride glass fibers have been investigated. Multimode fiber 190 microns, has very high mechanical strength greater than 100 kpsi and optical loss as low as 45 dB/km between 2 and 4 microns. Unlike chalcogenide glass fibers, indium fluoride fiber has a wide transmission window from 0.3 to 5.5 microns without any absorption peak. Indium fluoride glass fibers are the technology of choice for all application requiring transmission up to 5 micron such as infrared contour measure (IRCM) and chemical sensing. Furthermore, Indium fluoride glasses have low phonon energy and can be heavily doped and co-doped whit rare-earth elements. Therefore they are very promising candidates for infrared fiber lasers.

  6. Device to extrude indium wires

    Microsoft Academic Search

    M. Ece; R. Devito; G. Vidali

    1986-01-01

    A homemade, versatile, low-cost device to extrude indium wire for vacuum seals is described. It has the advantage that no boule of indium has to be made in advance, thereby reducing the amount of poisonous indium vapors, and that wires of different sizes can be made.

  7. Device to extrude indium wires

    NASA Astrophysics Data System (ADS)

    Ece, M.; DeVito, R.; Vidali, G.

    1986-12-01

    A homemade, versatile, low-cost device to extrude indium wire for vacuum seals is described. It has the advantage that no boule of indium has to be made in advance, thereby reducing the amount of poisonous indium vapors, and that wires of different sizes can be made.

  8. Indium Lung Disease

    PubMed Central

    Nakano, Makiko; Omae, Kazuyuki; Takeuchi, Koichiro; Chonan, Tatsuya; Xiao, Yong-long; Harley, Russell A.; Roggli, Victor L.; Hebisawa, Akira; Tallaksen, Robert J.; Trapnell, Bruce C.; Day, Gregory A.; Saito, Rena; Stanton, Marcia L.; Suarthana, Eva; Kreiss, Kathleen

    2012-01-01

    Background: Reports of pulmonary fibrosis, emphysema, and, more recently, pulmonary alveolar proteinosis (PAP) in indium workers suggested that workplace exposure to indium compounds caused several different lung diseases. Methods: To better understand the pathogenesis and natural history of indium lung disease, a detailed, systematic, multidisciplinary analysis of clinical, histopathologic, radiologic, and epidemiologic data for all reported cases and workplaces was undertaken. Results: Ten men (median age, 35 years) who produced, used, or reclaimed indium compounds were diagnosed with interstitial lung disease 4-13 years after first exposure (n = 7) or PAP 1-2 years after first exposure (n = 3). Common pulmonary histopathologic features in these patients included intraalveolar exudate typical of alveolar proteinosis (n = 9), cholesterol clefts and granulomas (n = 10), and fibrosis (n = 9). Two patients with interstitial lung disease had pneumothoraces. Lung disease progressed following cessation of exposure in most patients and was fatal in two. Radiographic data revealed that two patients with PAP subsequently developed fibrosis and one also developed emphysematous changes. Epidemiologic investigations demonstrated the potential for exposure to respirable particles and an excess of lung abnormalities among coworkers. Conclusions: Occupational exposure to indium compounds was associated with PAP, cholesterol ester crystals and granulomas, pulmonary fibrosis, emphysema, and pneumothoraces. The available evidence suggests exposure to indium compounds causes a novel lung disease that may begin with PAP and progress to include fibrosis and emphysema, and, in some cases, premature death. Prospective studies are needed to better define the natural history and prognosis of this emerging lung disease and identify effective prevention strategies. PMID:22207675

  9. Low mass dimuon production in proton-nucleus and Indium-Indium collisions

    E-print Network

    Paris-Sud XI, Université de

    Low mass dimuon production in proton-nucleus and Indium-Indium collisions Hermine K. Wöhri in proton-nucleus and indium-indium collisions at the CERN SPS. While the p-A data can be well described mass dimuon production in proton-nucleus and Indium-Indium collisions Hermine K. Wöhri QCD matter

  10. J/ suppression in indium-indium collisions at SPS Carlos Loureno for the NA60 Collaboration

    E-print Network

    Paris-Sud XI, Université de

    J/ suppression in indium-indium collisions at SPS energies Carlos Lourenço for the NA60, Armenia In 2003, NA60 collected data on dimuon production in indium-indium collisions at 158 GeV per/ suppression in indium-indium collisions at SPS energies Carlos Lourenço J/ suppression is generally considered

  11. Indium Sorption to Iron Oxides

    NASA Astrophysics Data System (ADS)

    White, S. J.; Sacco, S. A.; Hemond, H.; Hussain, F. A.; Runkel, R. L.; Walton-Day, K. E.; Kimball, B. A.; Shine, J. P.

    2014-12-01

    Indium is an increasingly important metal in semiconductors and electronics, and its use is growing rapidly as a semiconductive coating (as indium tin oxide) for liquid crystal displays (LCDs) and flat panel displays. It also has uses in important energy technologies such as light emitting diodes (LEDs) and photovoltaic cells. Despite its rapid increase in use, very little is known about the environmental behavior of indium, and concerns are being raised over the potential health effects of this emerging metal contaminant. One source of indium to the environment is acid mine drainage from the mining of lead, zinc, and copper sulfides. In our previous studies of a stream in Colorado influenced by acid mine drainage from lead and zinc mining activities, indium concentrations were found to be 10,000 times those found in uncontaminated rivers. However, the speciation and mobility of indium could not be reliably modeled because sorption constants to environmental sorbents have not been determined. In this study, we generate sorption constants for indium to ferrihydrite in the laboratory over a range of pHs, sorbent to sorbate ratios, and ionic strengths. Ferrihydrite is one of the most important sorbents in natural systems, and sorption to amorphous iron oxides such as ferrihydrite is thought to be one of the main removal mechanisms of metals from the dissolved phase in aqueous environments. Because of its relatively low solubility, we also find that indium hydroxide precipitation can dominate indium's partitioning at micromolar concentrations of indium. This precipitation may be important in describing indium's behavior in our study stream in Colorado, where modeling sorption to iron-oxides does not explain the complete removal of indium from the dissolved phase when the pH of the system is artificially raised to above 8. This study contributes much-needed data about indium's aqueous behavior, in order to better understand its fate, transport, and impacts in the environment.

  12. 9 CFR 113.113 - Autogenous biologics.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...product from each serial and subserial shall be tested for viable bacteria and fungi as provided in § 113.26. When the number of final...production of autogenous biologics shall be identified as follows: Bacteria, fungi, and mycoplasma shall be identified at least...

  13. Processing of indium: a review

    Microsoft Academic Search

    A. M. Alfantazi; R. R. Moskalyk

    2003-01-01

    Indium is an important by-product of zinc metal processing operations. Indium and other metal values are recovered during the production of primary commodities such as zinc by means of complex procedures, many of which are proprietary to each producer. One zinc recovery method consists of the Waelz process followed by leaching and purification prior to electrolytic recovery of zinc as

  14. Chelated Indium Activable Tracers for Geothermal Reservoirs

    E-print Network

    Stanford University

    SGP-TR-99 Chelated Indium Activable Tracers for Geothermal Reservoirs Constantinos V. Indium was se1ecti:d to be the most promising activable tracer. The thermal stability of indium tracer of the soluble indium concentration was made as a f'unction of time by neutron activation analysis. From the data

  15. Discovery of the Indium Isotopes

    E-print Network

    S. Amos; M. Thoennessen

    2010-09-08

    Thirty-eight indium isotopes (A = 98-135) have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

  16. Ferromagnetism and spin polarization in indium nitride, indium oxynitride, and Cr substituted indium oxynitride films

    NASA Astrophysics Data System (ADS)

    Thapa, P.; Lawes, G.; Nadgorny, B.; Naik, R.; Sudakar, C.; Schaff, W. J.; Dixit, A.

    2014-03-01

    We have investigated the structural, electrical, and magnetic properties of both sputter deposited indium oxynitride and Cr substituted indium oxynitride films as well as InN films grown by molecular beam epitaxy. The degenerate oxynitride films exhibit n-type carrier concentrations in excess of 1020 cm-3 and remain conducting to low temperatures, while the InN samples have much lower carrier concentrations and are insulating at low temperatures. At the same time all of these films show a room temperature ferromagnetic signal, with saturation magnetization ranging from 0.05 emu cm-3 for the indium oxynitride and InN films to 0.30 emu cm-3 for the Cr substituted film. Low temperature point contact Andreev reflection measurements find a spin polarizations from 46 ± 2% for indium oxynitride to 50 ± 2% for the Cr substituted films. These results highlight the potential of nitrides for spintronic applications.

  17. INDIUM--1997 37.1 By Robert D. Brown, Jr.

    E-print Network

    INDIUM--1997 37.1 INDIUM By Robert D. Brown, Jr. There was no known production of indium at domestic mines, and none was recovered from ores in the United States in 1997. Domestic indium production and Rhode Island, were the major producers of indium metal and indium products in 1997. Several smaller

  18. Intermediate mass dimuon production in Indium-Indium collisions at the CERN SPS

    E-print Network

    Paris-Sud XI, Université de

    Intermediate mass dimuon production in Indium-Indium collisions at the CERN SPS Ruben Shahoyan-NonCommercial-ShareAlike Licence. http://pos.sissa.it/ PoS(HEP2005)131 #12;Intermediate mass dimuon production in Indium-Indium

  19. Indium Foil Serves As Thermally Conductive Gasket

    NASA Technical Reports Server (NTRS)

    Eastman, G. Yale; Dussinger, Peter M.

    1993-01-01

    Indium foil found useful as gasket to increase thermal conductance between bodies clamped together. Deforms to fill imperfections on mating surfaces. Used where maximum temperature in joint less than melting temperature of indium. Because of low melting temperature of indium, most useful in cryogenic applications.

  20. Noninterpenetrating Indium Sulfide Supertetrahedral Cristobalite Framework

    E-print Network

    Yaghi, Omar M.

    Noninterpenetrating Indium Sulfide Supertetrahedral Cristobalite Framework Hailian Li, Mohamed indium sulfide clusters has been reported, it has an interpenetrating structure, thus precluding the presence of large cavities.7,8 Here, we describe how the same T3 indium sulfide clusters can be assembled

  1. Formation of copper-indium-selenide and\\/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Microsoft Academic Search

    Calvin J. Curtis; Alexander Miedaner; Maikel Van Hest; David S. Ginley; Jennifer A. Nekuda

    2011-01-01

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and\\/or copper indium gallium selenide films (66) on substrates (52).

  2. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    SciTech Connect

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  3. Indium Fluor Sauerstoff Kulturleistung Chemie

    E-print Network

    Zürich, Universität

    In F O 49 9 8 Indium Fluor Sauerstoff Kulturleistung Chemie Tag der Chemie Samstag, 18. Juni 2011;Liebe Besucherin, lieber Besucher Hiermit möchten wir Sie herzlich zu unserem «Tag der Chemie» auf dem Experimental- vorführung spannender und verblüffender Phänomene aus der Chemie. Für die Kinder, die gern einmal

  4. INDIUM--1999 37.1 By Robert D. Brown

    E-print Network

    INDIUM--1999 37.1 INDIUM By Robert D. Brown Domestic survey data and tables were prepared by Carolyn F. Crews, statistical assistant. Indium production in the United States during 1999 was confined, were the major producers of indium metal and indium products in 1999. A number of smaller firms also

  5. INDIUM--2000 38.1 By Robert D. Brown, Jr.

    E-print Network

    INDIUM--2000 38.1 INDIUM By Robert D. Brown, Jr. Domestic survey data and table were prepared by Carolyn F. Crews, statistical assistant. Indium production in the United States during 2000 was confined, were the major producers of indium metal and indium products in 2000. A number of smaller firms also

  6. tel-00278554,version1-13May2008 tel-00278554,version1-13May2008

    E-print Network

    Paris-Sud XI, Université de

    tel-00278554,version1-13May2008 #12;tel-00278554,version1-13May2008 #12;tel-00278554,version1-13May2008 #12;tel-00278554,version1-13May2008 #12;tel-00278554,version1-13May2008 #12;tel-00278554,version1-13May2008 #12;tel-00278554,version1-13May2008 #12;tel-00278554,version1-13May2008 #12;tel-00278554

  7. tel-00278546,version1-13May2008 tel-00278546,version1-13May2008

    E-print Network

    Boyer, Edmond

    tel-00278546,version1-13May2008 #12;tel-00278546,version1-13May2008 #12;tel-00278546,version1-13May2008 #12;tel-00278546,version1-13May2008 #12;tel-00278546,version1-13May2008 #12;tel-00278546,version1-13May2008 #12;tel-00278546,version1-13May2008 #12;tel-00278546,version1-13May2008 #12;tel-00278546

  8. Registration of 'TAM 113' wheat

    Technology Transfer Automated Retrieval System (TEKTRAN)

    ‘TAM 113’ (Reg. No. CV-1081, PI 666125), a hard red winter wheat (Triticum aestivum L.) cultivar with experimental designation TX02A0252, was developed and released by Texas AgriLife Research in 2010. TAM 113 is an F5–derived line from the cross TX90V6313/TX94V3724 made at Vernon, TX in 1995. Both T...

  9. 13 CFR 113.540 - Advertising.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...2014-01-01 2014-01-01 false Advertising. 113.540 Section 113.540 Business...Or Activities Prohibited § 113.540 Advertising. A recipient shall not in any advertising related to employment indicate...

  10. 41 CFR 101-25.113 - [Reserved

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    41 Public Contracts and Property Management...113 Section 101-25.113 Public Contracts and Property Management...MANAGEMENT REGULATIONS SUPPLY AND PROCUREMENT 25-GENERAL 25.1-General Policies § 101-25.113...

  11. 46 CFR 113.43-1 - Applicability.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...113.43-1 Section 113.43-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Steering Failure Alarm Systems § 113.43-1...

  12. 46 CFR 113.25-1 - Applicability.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...113.25-1 Section 113.25-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-1...

  13. 46 CFR 113.50-1 - Applicability.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...113.50-1 Section 113.50-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Public Address Systems § 113.50-1...

  14. 46 CFR 113.35-1 - Definitions.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...113.35-1 Section 113.35-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Engine Order Telegraph Systems § 113.35-1...

  15. 46 CFR 113.25-1 - Applicability.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...113.25-1 Section 113.25-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-1...

  16. 5 CFR 9401.113 - Waivers.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...113 Section 9401.113 Administrative Personnel BUREAU OF CONSUMER FINANCIAL PROTECTION SUPPLEMENTAL STANDARDS OF ETHICAL CONDUCT FOR EMPLOYEES OF THE BUREAU OF CONSUMER FINANCIAL PROTECTION § 9401.113 Waivers. The DAEO...

  17. 5 CFR 9401.113 - Waivers.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...113 Section 9401.113 Administrative Personnel BUREAU OF CONSUMER FINANCIAL PROTECTION SUPPLEMENTAL STANDARDS OF ETHICAL CONDUCT FOR EMPLOYEES OF THE BUREAU OF CONSUMER FINANCIAL PROTECTION § 9401.113 Waivers. The DAEO...

  18. 29 CFR 1917.113 - Clearance heights.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...2014-07-01 2014-07-01 false Clearance heights. 1917.113 Section 1917.113 Labor ...Terminal Facilities § 1917.113 Clearance heights. Clearance heights shall be prominently posted where the height...

  19. 29 CFR 1917.113 - Clearance heights.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...2011-07-01 2011-07-01 false Clearance heights. 1917.113 Section 1917.113 Labor ...Terminal Facilities § 1917.113 Clearance heights. Clearance heights shall be prominently posted where the height...

  20. 29 CFR 1917.113 - Clearance heights.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...2013-07-01 2013-07-01 false Clearance heights. 1917.113 Section 1917.113 Labor ...Terminal Facilities § 1917.113 Clearance heights. Clearance heights shall be prominently posted where the height...

  1. 29 CFR 1917.113 - Clearance heights.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...2010-07-01 2010-07-01 false Clearance heights. 1917.113 Section 1917.113 Labor ...Terminal Facilities § 1917.113 Clearance heights. Clearance heights shall be prominently posted where the height...

  2. 29 CFR 1917.113 - Clearance heights.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...2012-07-01 2012-07-01 false Clearance heights. 1917.113 Section 1917.113 Labor ...Terminal Facilities § 1917.113 Clearance heights. Clearance heights shall be prominently posted where the height...

  3. 28 CFR 551.113 - Counseling.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...2014-07-01 2014-07-01 false Counseling. 551.113 Section 551.113 ...MISCELLANEOUS Pretrial Inmates § 551.113 Counseling. (a) When consistent with institution...be allowed the opportunity to receive counseling services with convicted...

  4. 28 CFR 551.113 - Counseling.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...2011-07-01 2011-07-01 false Counseling. 551.113 Section 551.113 ...MISCELLANEOUS Pretrial Inmates § 551.113 Counseling. (a) When consistent with institution...be allowed the opportunity to receive counseling services with convicted...

  5. 28 CFR 551.113 - Counseling.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...2010-07-01 2010-07-01 false Counseling. 551.113 Section 551.113 ...MISCELLANEOUS Pretrial Inmates § 551.113 Counseling. (a) When consistent with institution...be allowed the opportunity to receive counseling services with convicted...

  6. 28 CFR 551.113 - Counseling.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...2012-07-01 2012-07-01 false Counseling. 551.113 Section 551.113 ...MISCELLANEOUS Pretrial Inmates § 551.113 Counseling. (a) When consistent with institution...be allowed the opportunity to receive counseling services with convicted...

  7. 28 CFR 551.113 - Counseling.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...2013-07-01 2013-07-01 false Counseling. 551.113 Section 551.113 ...MISCELLANEOUS Pretrial Inmates § 551.113 Counseling. (a) When consistent with institution...be allowed the opportunity to receive counseling services with convicted...

  8. 38 CFR 75.113 - Data breach.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...Relief 2 2012-07-01 2012-07-01 false Data breach. 75.113 Section 75.113 Pensions...AFFAIRS (CONTINUED) INFORMATION SECURITY MATTERS Data Breaches § 75.113 Data breach. Consistent with the definition of...

  9. 38 CFR 75.113 - Data breach.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...Relief 2 2014-07-01 2014-07-01 false Data breach. 75.113 Section 75.113 Pensions...AFFAIRS (CONTINUED) INFORMATION SECURITY MATTERS Data Breaches § 75.113 Data breach. Consistent with the definition of...

  10. 38 CFR 75.113 - Data breach.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...Relief 2 2013-07-01 2013-07-01 false Data breach. 75.113 Section 75.113 Pensions...AFFAIRS (CONTINUED) INFORMATION SECURITY MATTERS Data Breaches § 75.113 Data breach. Consistent with the definition of...

  11. INDIUM PHOSPHIDE WINDOW LAYERS FOR INDIUM GALLIUM ARSENIDE SOLAR CELLS

    Microsoft Academic Search

    Raj K. Jain

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells re- sulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (InxGa1-xAs) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates

  12. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...2014-07-01 2014-07-01 false Copper gallium indium selenide. 721.10391...Chemical Substances § 721.10391 Copper gallium indium selenide. (a) Chemical...The chemical substance identified as copper gallium indium selenide (PMN...

  13. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...2012-07-01 2012-07-01 false Copper gallium indium selenide. 721.10391...Chemical Substances § 721.10391 Copper gallium indium selenide. (a) Chemical...The chemical substance identified as copper gallium indium selenide (PMN...

  14. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...2013-07-01 2013-07-01 false Copper gallium indium selenide. 721.10391...Chemical Substances § 721.10391 Copper gallium indium selenide. (a) Chemical...The chemical substance identified as copper gallium indium selenide (PMN...

  15. Thermal Conductivity of Indium–Graphene and Indium-Gallium–Graphene Composites

    Microsoft Academic Search

    K. Jagannadham

    2011-01-01

    Samples of graphene composites with a matrix of indium or indium-gallium alloy were prepared in the form of foils using exfoliated\\u000a graphene dispersions. The thermal conductivity of the composite samples with different thicknesses was determined using the\\u000a three-omega method. Indium–graphene composite samples with a thickness of 430 ?m exhibited a twofold increase in thermal conductivity, whereas indium-gallium–graphene composite samples with a

  16. Mineral resource of the month: indium

    USGS Publications Warehouse

    Tolcin, Amy C.

    2011-01-01

    Geologically, the occurrence of indium minerals is rare. The element most often occurs as a sulfide inclusion or substitutes in other base-metal minerals, including cassiterite, chalcopyrite, sphalerite and stannite. Indium’s abundance in the crust is estimated to be 0.05 parts per million, which makes it more abundant than silver, but it is so widely disseminated that it does not occur in high enough concentrations to form mineable deposits. Therefore, indium is most often recovered from byproduct residues produced during the refining of lead and zinc. But only about one-quarter of the indium mined worldwide is refined into metal, as many indium-bearing concentrates are sent to refineries that do not have the capability of recovering the metal.

  17. Electron mobility in indium nitride

    Microsoft Academic Search

    B. R Nag

    2004-01-01

    Electron mobility in indium nitride is computed for the temperature of 300 and 500K, taking into account all the scattering mechanisms, degeneracy, screening and the energy-band nonparabolicity. The band gap, effective mass, static dielectric constant and high-frequency dielectric constant are taken as 0.7, 0.05, 11 and 6.7eV, respectively. The results are significantly different from those obtained earlier. Experimental results may

  18. Nitrogen-rich indium nitride

    Microsoft Academic Search

    K. S. A. Butcher; M. Wintrebert-Fouquet; P. P.-T. Chen; T. L. Tansley; H. Dou; S. K. Shrestha; H. Timmers; M. Kuball; K. E. Prince; J. E. Bradby

    2004-01-01

    Elastic recoil detection analysis, using an incident beam of 200 MeV Au ions, has been used to measure indium nitride films grown by radio-frequency sputtering. It is shown that the films have nitrogen-rich stoichiometry. Nitrogen vacancies are therefore unlikely to be responsible for the commonly observed high background carrier concentration. Ultraviolet Raman and secondary ion mass spectroscopy measurements are used

  19. Thermal properties of indium nitride

    Microsoft Academic Search

    S. Krukowski; A. Witek; J. Adamczyk; J. Jun; M. Bockowski; I. Grzegory; B. Lucznik; G. Nowak; M. Wróblewski; A. Presz; S. Gierlotka; S. Stelmach; B. Palosz; S. Porowski; P. Zinn

    1998-01-01

    Indium nitride single crystals, grown by the nitrogen microwave plasma method have been used in the determination of thermal properties of InN. Specific heat of InN was measured in the temperature interval between 150 and 300 K. InN Debye temperature and Grüneisen parameter calculated from these data are: ? = 660 K and ? = 0.77.Thermal conductivity of InN has

  20. Viscoelastic DampingViscoelastic Damping Characteristics of Indium-Tin/Characteristics of Indium-Tin/SiCSiC

    E-print Network

    Swan Jr., Colby Corson

    1 Viscoelastic DampingViscoelastic Damping Characteristics of Indium-Tin/Characteristics of Indium Approach: · Based on past experience, indium-tin has well- characterized stiffness/damping. · Fabricate

  1. On the solar abundance of indium

    E-print Network

    N. Vitas; I. Vince; M. Lugaro; O. Andriyenko; M. Gosic; R. J. Rutten

    2007-11-14

    The generally adopted value for the solar abundance of indium is over six times higher than the meteoritic value. We address this discrepancy through numerical synthesis of the 451.13 nm line on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure and Zeeman splitting in detail. The results, as well as a re-appraisal of indium nucleosynthesis, suggest that the solar indium abundance is close to the meteoritic value, and that some unidentified ion line causes the 451.13 nm feature in the quiet-sun spectrum.

  2. STS-113 Crew Training Clip

    NASA Astrophysics Data System (ADS)

    2002-01-01

    The STS-113 crew consists of Commander Jim Weatherbee, Pilot Paul Lockhart, and Mission Specialists Michael Lopez-Alegria and John Herrington. The goal of the STS-113 mission is to deliver the Expedition Six crew to the International Space Station and return the Expedition Five crew to Earth. Also, the P1 Truss will be installed on the International Space Station. The STS-113 crew is shown getting suited for Pre-Launch Ingress and Egress. The Neutral Buoyancy Lab Extravehicular Activity training (NBL) (EVA), CETA Bolt Familiarization, and Photography TV instruction are also presented.

  3. Heat capacity of indium nitride

    Microsoft Academic Search

    Iwona Zi?borak-Tomaszkiewicz; R. ?wierzewski; P. Gierycz

    2008-01-01

    The heat capacity of the solid indium nitride was measured, using the Calvet TG-DSC 111 differential scanning microcalorimeter\\u000a (Setaram, France), in the temperature between (314–978 K). The temperature dependence of the heat capacity can be presented\\u000a in the following form: C\\u000a p=41.400+0.499·10?3\\u000a T?135502T\\u000a ?2?26169900 T\\u000a ?3.

  4. INDIUM--2001 37.1 By Robert D. Brown, Jr.

    E-print Network

    INDIUM--2001 37.1 INDIUM By Robert D. Brown, Jr. Domestic survey data and tables were prepared by Carolyn F. Crews, statistical assistant. All domestic production of indium in the United States was confined to the upgrading of imported indium metal and the recycling of scrap. Two refineries, one each

  5. INDIUM--2002 37.1 By John D. Jorgenson

    E-print Network

    INDIUM--2002 37.1 INDIUM By John D. Jorgenson Domestic survey data and tables were prepared not maintain adequate hazardous material dismantling facilities (Schaffer, 2003). An estimated 37 t of indium, written commun., October 24, 2002). Production U.S. production of indium in 2002 consisted of raising

  6. INDIUM--1998 37.1 By Robert D. Brown, Jr.

    E-print Network

    INDIUM--1998 37.1 INDIUM By Robert D. Brown, Jr. Domestic survey data and tables were prepared by Carolyn F. Crews, statistical assistant. There was no known production of indium at domestic mines, and none was recovered from ores in the United States in 1998. Domestic indium production was confined

  7. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2009. Indium-containing

    E-print Network

    74 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2009. Indium-containing zinc concentrates produced in Alaska, produced indium metal and indium products by upgrading lower grade imported indium metal. High

  8. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2008. Indium-containing

    E-print Network

    76 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2008. Indium-containing zinc concentrates produced in Alaska, produced indium metal and indium products by upgrading lower grade imported indium metal. High

  9. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2006. Indium-containing

    E-print Network

    78 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2006. Indium-containing zinc concentrates produced in Alaska, produced indium metal and indium products by upgrading lower grade imported indium metal. High

  10. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2005. Indium-

    E-print Network

    82 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2005. Indium- containing zinc concentrates produced in Alaska, produced indium metal and indium products by upgrading lower grade imported indium metal. High

  11. FM 3-04.113 (FM 1-113) Utility and Cargo Helicopter Operations

    E-print Network

    US Army Corps of Engineers

    FM 3-04.113 (FM 1-113) Utility and Cargo Helicopter Operations December 2007 DISTRIBUTION Helicopter Operations Contents Page PREFACE ........................................................................................ 1-3 Assault Helicopter Battalion

  12. Decomposition of indium nitride by ion bombardment with the formation of indium tungstate

    Microsoft Academic Search

    M. S. Wong; F. G. Karioris; L. Cartz

    1985-01-01

    Bombardment by Kr (3 MeV) ions of a fine powder of InN on a W substrate results in decomposition to indium and to the formation of indium tungstate In 0.4WO3 or InW3O9.By contrast, bombardments at 150 keV results in the decomposition but no further reaction. The formation of Indium tungstate is considered an ion mixing reaction induced by the 3

  13. 13 CFR 113.505 - Employment criteria.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    13 Business Credit and Assistance...2010-01-01 false Employment criteria. 113...Section 113.505 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION...Basis of Sex in Employment in Education...

  14. 13 CFR 113.505 - Employment criteria.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    13 Business Credit and Assistance...2013-01-01 false Employment criteria. 113...Section 113.505 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION...Basis of Sex in Employment in Education...

  15. 13 CFR 113.505 - Employment criteria.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    13 Business Credit and Assistance...2011-01-01 false Employment criteria. 113...Section 113.505 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION...Basis of Sex in Employment in Education...

  16. 13 CFR 113.505 - Employment criteria.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    13 Business Credit and Assistance...2014-01-01 false Employment criteria. 113...Section 113.505 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION...Basis of Sex in Employment in Education...

  17. 13 CFR 113.505 - Employment criteria.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    13 Business Credit and Assistance...2012-01-01 false Employment criteria. 113...Section 113.505 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION...Basis of Sex in Employment in Education...

  18. 9 CFR 113.2 - Testing aids.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    9 Animals and Animal Products 1 2012-01-01 2012-01-01 false Testing aids. 113.2 Section 113.2 Animals and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES,...

  19. 9 CFR 113.2 - Testing aids.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    9 Animals and Animal Products 1 2014-01-01 2014-01-01 false Testing aids. 113.2 Section 113.2 Animals and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES,...

  20. Flow modulation epitaxy of indium gallium nitride

    Microsoft Academic Search

    S. Keller; U. K. Mishra; S. P. Denbaars

    1997-01-01

    InGaN layers were grown on GaN films by flow modulation epitaxy (FME) using the precursors trimethylgallium, trimethylindium,\\u000a and ammonia. The indium composition of the FME grown layers was generally lower than of films grown under the same conditions\\u000a in the continuous growth mode, but which had been of poor optical quality. The indium incorporation efficiency increased with\\u000a decreasing ammonia flush

  1. Indium Single-Ion Frequency Standard

    NASA Technical Reports Server (NTRS)

    Nagourney, Warren

    2001-01-01

    A single laser-cooled indium ion is a promising candidate for an ultimate resolution optical time or frequency standard. It can be shown that single ions from group IIIA of the periodic table (indium, thallium, etc.) can have extremely small systematic errors. In addition to being free from Doppler, transit-time and collisional shifts, these ions are also quite insensitive to perturbations from ambient magnetic and electric fields (mainly due to the use of a J=0-0 transition for spectroscopy). Of all group IIIA ions, indium seems to be the most practical, since it is heavy enough to have a tolerable intercombination cooling transition rate and (unlike thallium) has transitions which are easily accessible with frequency multiplied continuous-wave lasers. A single indium ion standard has a potential inaccuracy of one part in 10(exp 18) for integration times of 10(exp 6) seconds. We have made substantial progress during the grant period in constructing a frequency standard based upon a single indium ion. At the beginning of the grant period, single indium ions were being successfully trapped, but the lasers and optical systems were inadequate to achieve the desired goal. We have considerably improved the stability of the dye laser used to cool the ions and locked it to a molecular resonance line, making it possible to observe stable cooling-line fluorescence from a single indium ion for reasonable periods of time, as required by the demands of precision spectroscopy. We have substantially improved the single-ion fluorescence signal with significant benefits for the detection efficiency of forbidden transitions using the 'shelving' technique. Finally, we have constructed a compact, efficient UV 'clock' laser and observed 'clock' transitions in single indium ions using this laser system. We will elaborate on these accomplishments.

  2. 21 CFR 113.5 - Current good manufacturing practice.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ...2012-04-01 2012-04-01 false Current good manufacturing practice. 113.5 Section 113.5 Food and Drugs...CONTAINERS General Provisions § 113.5 Current good manufacturing practice. The criteria in §§ 113.10,...

  3. 21 CFR 113.5 - Current good manufacturing practice.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ...2014-04-01 2014-04-01 false Current good manufacturing practice. 113.5 Section 113.5 Food and Drugs...CONTAINERS General Provisions § 113.5 Current good manufacturing practice. The criteria in §§ 113.10,...

  4. 21 CFR 113.5 - Current good manufacturing practice.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ...2013-04-01 2013-04-01 false Current good manufacturing practice. 113.5 Section 113.5 Food and Drugs...CONTAINERS General Provisions § 113.5 Current good manufacturing practice. The criteria in §§ 113.10,...

  5. Indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  6. Fabrication and characterization of an indium tin oxide acoustoelectric hydrophone

    E-print Network

    Witte, Russell S.

    Fabrication and characterization of an indium tin oxide acoustoelectric hydrophone Pier Ingram*1 the device. In this study a number of different hydrophone designs were created using indium tin oxide (ITO

  7. Neutron configurations in 113Pd

    NASA Astrophysics Data System (ADS)

    Kurpeta, J.; Urban, W.; P?ochocki, A.; Rza̧ca-Urban, T.; Smith, A. G.; Smith, J. F.; Simpson, G. S.; Ahmad, I.; Greene, J. P.; Jokinen, A.; Penttilä, H.

    2014-12-01

    Excited states in 113Pd, populated in ?- decay of 113Rh and in spontaneous fission of 248Cm and 252Cf, have been studied by means of ? spectroscopy at the IGISOL facility of Jyväskylä University and using large arrays of Ge detectors (Eurogam2 and Gammasphere, respectively). The position of the 11/2- yrast excitation in 113Pd, proposed recently at 166.1 keV by other authors, has been corrected to 98.9 keV. The decay of this level has been discussed to explain the observed transition intensities. The 7/2- member of the yrast, unique-parity configuration has been identified at 84.9 keV and a band on top of this level proposed. On top of the 1/2+, first excited state a band has been built and a new 3/2+ bandhead has been proposed at 151.9 keV. A possible oblate-shape origin of these low-energy bandsheads has been discussed.

  8. Thermal Stability of Chelated Indium Activable Tracers

    SciTech Connect

    Chrysikopoulos, Costas; Kruger, Paul

    1986-01-21

    The thermal stability of indium tracer chelated with organic ligands ethylenediaminetetraacetic acid (EDTA) and nitrilotriacetic acid (NTA) was measured for reservoir temperatures of 150, 200, and 240 C. Measurements of the soluble indium concentration was made as a function of time by neutron activation analysis. From the data, approximate thermal decomposition rates were estimated. At 150 C, both chelated tracers were stable over the experimental period of 20 days. At 200 C, the InEDTA concentration remained constant for 16 days, after which the thermal decomposition occurred at a measured rate constant of k = 0.09 d{sup -1}. The thermal decomposition of InNTA at 200 C showed a first order reaction with a measured rate constant of k = 0.16 d{sup -1}. At 240 C, both indium chelated tracers showed rapid decomposition with rate constants greater than 1.8 d{sup -1}. The data indicate that for geothermal reservoir with temperatures up to about 200 C, indium chelated tracers can be used effectively for transit times of at least 20 days. These experiments were run without reservoir rock media, and do not account for concomitant loss of indium tracer by adsorption processes.

  9. Structures of indium oxide nanobelts Xiang Yang Konga,b

    E-print Network

    Wang, Zhong L.

    Structures of indium oxide nanobelts Xiang Yang Konga,b , Zhong Lin Wanga,* a Department by D.E. Van Dyck Abstract Indium oxide nanobelts of growth directions of [100] type (majority) and [120; 81.07. 2 b; 07.10.Cm Keywords: A. Nanobelt; A. In2O3 Indium oxide is an important transparent

  10. Optoelectronic and microwave characteristics of silver coated indium

    E-print Network

    Park, Seong-Ook

    Optoelectronic and microwave characteristics of silver coated indium bumps for low temperature flip of silver coating on pure indium bumps for low temperature and high speed flip-chip applications and resistance [2]. Alloys containing indium are common in applications where rela- tively low processing

  11. Indium Phosphide Planar Integrated Optics Comes of Age Jens Noeckel

    E-print Network

    Nöckelm, Jens

    Indium Phosphide Planar Integrated Optics Comes of Age Jens Noeckel Tom Pierson Jane Zucker exceeds supply. Indium Phosphide: Adapting Form to Function PLCs can serve many roles in fiberoptic of the spectrum, the current material of choice is indium phosphide. When compared with the sophistication

  12. Robust room temperature persistent photoconductivity in polycrystalline indium oxide films

    E-print Network

    Avrutsky, Ivan

    Robust room temperature persistent photoconductivity in polycrystalline indium oxide films A. Dixit be associated with glassy behavior. © 2009 American Institute of Physics. DOI: 10.1063/1.3159623 Indium oxide indium tin oxide, in light emitting diodes, liquid crystal displays, and solar cells.1 However, despite

  13. Vacuum-evaporated indium tin oxide layers

    NASA Astrophysics Data System (ADS)

    Venkatasubramanian, S.; Murali, K. R.; Rangarajan, N.; Subramanian, V.; Elango, T.

    1995-08-01

    Indium tin oxide (ITO) film has been prepared by sequential vacuum deposition of indium and tin on plain glass followed by oxidation at temperatures around 400 degrees - 650 degrees Celsius. By a proper control of the time of evaporation and the heating current the concentration of vacuum evaporated indium was maintained constant and tin concentration was varied in the range of 10 - 60% by weight. ITO films with good optical and electrical properties can be obtained by adjusting the ratio of Sn:In in the range of 1:9 to 1:35 after heat- treatment at 400 degrees to 600 degrees Celsius. The films exhibit a sheet resistance of 20 ohms per square with an optical transmission of 60% at 500 nm when the Sn:In ratio was maintained at 1:9. The film was found suitable for ITO/Si solar cells and as substrates for photo anodes in PEC cells.

  14. Indium-111 leukocyte scanning and fracture healing

    SciTech Connect

    Mead, L.P.; Scott, A.C.; Bondurant, F.J.; Browner, B.D. (Univ. of Texas Medical School, Houston (USA))

    1990-01-01

    This study was undertaken to determine the specificity of indium-111 leukocyte scans for osteomyelitis when fractures are present. Midshaft tibial osteotomies were performed in 14 New Zealand white rabbits, seven of which were infected postoperatively with Staphylococcus aureus per Norden's protocol. All 14 rabbits were scanned following injection with 75 microCi of indium 111 at 72 h after osteotomy and at weekly intervals for 4 weeks. Before the rabbits were killed, the fracture sites were cultured to document the presence or absence of infection. The results of all infected osteotomy sites were positive, whereas no positive scans were found in the noninfected osteotomies. We concluded from this study that uncomplicated fracture healing does not result in a positive indium-111 leukocyte scan.

  15. The Anthrobiogeochemical Cycle of Indium: A Review of the Natural and Anthropogenic Cycling of Indium in the Environment

    Microsoft Academic Search

    SARAH JANE O. WHITE; HAROLD F. HEMOND

    2012-01-01

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known about the natural or industrial cycling of indium, and toxicological data are incomplete. This review presents the existing state of knowledge of indium's natural and industrial fluxes, chemical behavior, toxicity, and analytical methods by

  16. Transport in indium-decorated graphene

    NASA Astrophysics Data System (ADS)

    Chandni, U.; Henriksen, Erik A.; Eisenstein, J. P.

    2015-06-01

    The electronic-transport properties of single-layer graphene that has a dilute coating of indium adatoms have been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed over a wide density range after In doping. The low-field magnetoresistance carries signatures of quantum interference effects which are significantly altered by the adatoms.

  17. STS-113 payload in Endeavour's payload bay

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. - The payload on mission STS-113 rests inside Space Shuttle Endeavour's payload bay prior to closing of the doors. The 16th assembly flight to the International Space Station, STS-113 will carry the Port 1 (P1) truss aboard Space Shuttle Endeavour as well as the Expedition 6 crew, who will replace Expedition 5 on the Station. Mission STS-113 is scheduled to launch Nov. 10, 2002.

  18. Xblog 1.1.3

    NSDL National Science Digital Library

    With all of the blogs available online, many users may be interested in putting their own up too -- if they haven't done so already. This handy little application allows users to publish their blog quickly by setting the server, creating a template, and adding their entries, all with just a few clicks. Users will appreciate the simplicity of the application, although there is little documentation about the application currently available online. Xblog 1.1.3 is compatible with all systems running Mac OS X.

  19. A kinetic study of indium nitride formation from indium oxide powders

    Microsoft Academic Search

    Amith K Murali; Anirudha D Barve; Subhash H Risbud

    2002-01-01

    Indium oxide powders were reacted in flowing ammonia at various temperatures and times to form indium nitride (InN), and the kinetics of the oxide- to- nitride reaction was quantitatively determined by X-ray diffraction analysis. The quantity of the InN phase formed increased expectedly at higher temperatures and longer times showing a stretched-out exponential dependence. The reaction rate constant at a

  20. Sinterless Formation Of Contacts On Indium Phosphide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

  1. Thermal Conductivity of Liquid Tin and Indium

    Microsoft Academic Search

    M. V. Peralta-Martinez; W. A. Wakeham

    2001-01-01

    The present paper reports new measurements of the thermal conductivity of liquid tin and indium. The measurements have been performed at atmospheric pressure in a range of temperatures from 450 to 750 K using a new experimental method based on the principle of the transient hot wire technique. The particular version of the technique employed for molten metals has been

  2. 21 CFR 113.3 - Definitions.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ...2012-04-01 false Definitions. 113.3 Section...THERMALLY PROCESSED LOW-ACID FOODS PACKAGED IN HERMETICALLY...Provisions § 113.3 Definitions. For the purposes...part, the following definitions apply: (a) Aseptic...code. (n) Low-acid foods means any...

  3. 21 CFR 113.3 - Definitions.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ...2013-04-01 false Definitions. 113.3 Section...THERMALLY PROCESSED LOW-ACID FOODS PACKAGED IN HERMETICALLY...Provisions § 113.3 Definitions. For the purposes...part, the following definitions apply: (a) Aseptic...code. (n) Low-acid foods means any...

  4. 21 CFR 113.3 - Definitions.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ...2014-04-01 false Definitions. 113.3 Section...THERMALLY PROCESSED LOW-ACID FOODS PACKAGED IN HERMETICALLY...Provisions § 113.3 Definitions. For the purposes...part, the following definitions apply: (a) Aseptic...code. (n) Low-acid foods means any...

  5. REGISTRATION OF NC113 SOYBEAN MAPPING POPULATION

    Technology Transfer Automated Retrieval System (TEKTRAN)

    NC113 Soybean Mapping Population was developed by the U.S. Department of Agriculture, Agricultural Research Service (USDA-ARS) and the North Carolina Agricultural Research Service (NCARS). The genetic marker data for NC113 were collected at the Georgia Agricultural Experiment Stations. This popula...

  6. 9 CFR 113.44 - Swine safety test.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...2010-01-01 false Swine safety test. 113.44 Section 113...and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT...Procedures § 113.44 Swine safety test. The swine safety test provided in this...

  7. 9 CFR 113.44 - Swine safety test.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...2011-01-01 false Swine safety test. 113.44 Section 113...and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT...Procedures § 113.44 Swine safety test. The swine safety test provided in this...

  8. 9 CFR 113.45 - Sheep safety test.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...2010-01-01 false Sheep safety test. 113.45 Section 113...and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT...Procedures § 113.45 Sheep safety test. The sheep safety test provided in this...

  9. 9 CFR 113.45 - Sheep safety test.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...2011-01-01 false Sheep safety test. 113.45 Section 113...and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT...Procedures § 113.45 Sheep safety test. The sheep safety test provided in this...

  10. 7 CFR 1150.113 - Fluid milk products.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...Agriculture 9 2011-01-01 2011-01-01 false Fluid milk products. 1150.113 Section 1150.113...and Research Order Definitions § 1150.113 Fluid milk products. Fluid milk products means those milk products...

  11. 7 CFR 1150.113 - Fluid milk products.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...Agriculture 9 2012-01-01 2012-01-01 false Fluid milk products. 1150.113 Section 1150.113...and Research Order Definitions § 1150.113 Fluid milk products. Fluid milk products means those milk products...

  12. 7 CFR 1150.113 - Fluid milk products.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...Agriculture 9 2014-01-01 2013-01-01 true Fluid milk products. 1150.113 Section 1150.113...and Research Order Definitions § 1150.113 Fluid milk products. Fluid milk products means those milk products...

  13. 7 CFR 1150.113 - Fluid milk products.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...Agriculture 9 2013-01-01 2013-01-01 false Fluid milk products. 1150.113 Section 1150.113...and Research Order Definitions § 1150.113 Fluid milk products. Fluid milk products means those milk products...

  14. 7 CFR 1150.113 - Fluid milk products.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...Agriculture 9 2010-01-01 2009-01-01 true Fluid milk products. 1150.113 Section 1150.113...and Research Order Definitions § 1150.113 Fluid milk products. Fluid milk products means those milk products...

  15. 29 CFR 780.113 - Seeds, spawn, etc.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...Labor 3 2013-07-01 2013-07-01 false Seeds, spawn, etc. 780.113 Section 780.113 ...Agricultural Or Horticultural Commodities § 780.113 Seeds, spawn, etc. Seeds and seedlings of agricultural and horticultural...

  16. 29 CFR 780.113 - Seeds, spawn, etc.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...Labor 3 2011-07-01 2011-07-01 false Seeds, spawn, etc. 780.113 Section 780.113 ...Agricultural Or Horticultural Commodities § 780.113 Seeds, spawn, etc. Seeds and seedlings of agricultural and horticultural...

  17. 29 CFR 780.113 - Seeds, spawn, etc.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...Labor 3 2014-07-01 2014-07-01 false Seeds, spawn, etc. 780.113 Section 780.113 ...Agricultural Or Horticultural Commodities § 780.113 Seeds, spawn, etc. Seeds and seedlings of agricultural and horticultural...

  18. 29 CFR 780.113 - Seeds, spawn, etc.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...Labor 3 2012-07-01 2012-07-01 false Seeds, spawn, etc. 780.113 Section 780.113 ...Agricultural Or Horticultural Commodities § 780.113 Seeds, spawn, etc. Seeds and seedlings of agricultural and horticultural...

  19. 29 CFR 780.113 - Seeds, spawn, etc.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...Labor 3 2010-07-01 2010-07-01 false Seeds, spawn, etc. 780.113 Section 780.113 ...Agricultural Or Horticultural Commodities § 780.113 Seeds, spawn, etc. Seeds and seedlings of agricultural and horticultural...

  20. 46 CFR 113.45-5 - General requirements.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...113.45-5 Section 113.45-5 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Refrigerated Spaces Alarm Systems § 113.45-5...

  1. 46 CFR 113.05-5 - Approved equipment.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...113.05-5 Section 113.05-5 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Provisions § 113.05-5 Approved...

  2. 46 CFR 113.45-5 - General requirements.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...113.45-5 Section 113.45-5 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Refrigerated Spaces Alarm Systems § 113.45-5...

  3. 46 CFR 113.05-5 - Approved equipment.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...113.05-5 Section 113.05-5 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Provisions § 113.05-5 Approved...

  4. 9 CFR 113.65 - Brucella Abortus Vaccine.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 2013-01-01 false Brucella Abortus Vaccine. 113.65 Section 113.65 Animals and...VECTORS STANDARD REQUIREMENTS Live Bacterial Vaccines § 113.65 Brucella Abortus Vaccine. Brucella Abortus Vaccine shall be...

  5. 9 CFR 113.65 - Brucella Abortus Vaccine.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 2012-01-01 false Brucella Abortus Vaccine. 113.65 Section 113.65 Animals and...VECTORS STANDARD REQUIREMENTS Live Bacterial Vaccines § 113.65 Brucella Abortus Vaccine. Brucella Abortus Vaccine shall be...

  6. 28 CFR 115.113 - Supervision and monitoring.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...Supervision and monitoring. 115.113 Section 115.113 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) PRISON RAPE ELIMINATION ACT NATIONAL STANDARDS Standards for Lockups Prevention Planning § 115.113 Supervision and...

  7. 46 CFR 113.30-3 - Means of communications.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 2013-10-01 false Means of communications. 113.30-3 Section 113.30-3...CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Internal Communications § 113.30-3 Means of...

  8. 10 CFR 26.113 - Splitting the urine specimen.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...2010-01-01 false Splitting the urine specimen. 26.113 Section 26.113 Energy NUCLEAR REGULATORY COMMISSION FITNESS FOR DUTY PROGRAMS Collecting Specimens for Testing § 26.113 Splitting the urine specimen. (a) Licensees...

  9. 7 CFR 1709.113 - Limitations on grant awards.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...2014-01-01 2014-01-01 false Limitations on grant awards. 1709.113 Section 1709.113...ENERGY COST COMMUNITIES RUS High Energy Cost Grant Program § 1709.113 Limitations on grant awards. (a) The Administrator may...

  10. 7 CFR 1709.113 - Limitations on grant awards.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...2013-01-01 2013-01-01 false Limitations on grant awards. 1709.113 Section 1709.113...ENERGY COST COMMUNITIES RUS High Energy Cost Grant Program § 1709.113 Limitations on grant awards. (a) The Administrator may...

  11. 12 CFR 238.113 - Confidentiality of proceedings.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...2014-01-01 false Confidentiality of proceedings. 238.113 Section 238.113 Banks...COMPANIES (REGULATION LL) Investigative Proceedings and Formal Examination Proceedings § 238.113 Confidentiality of...

  12. 12 CFR 238.113 - Confidentiality of proceedings.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...2013-01-01 false Confidentiality of proceedings. 238.113 Section 238.113 Banks...COMPANIES (REGULATION LL) Investigative Proceedings and Formal Examination Proceedings § 238.113 Confidentiality of...

  13. 12 CFR 238.113 - Confidentiality of proceedings.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...2012-01-01 false Confidentiality of proceedings. 238.113 Section 238.113 Banks...COMPANIES (REGULATION LL) Investigative Proceedings and Formal Examination Proceedings § 238.113 Confidentiality of...

  14. 9 CFR 113.42 - Detection of lymphocytic choriomeningitis contamination.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...2011-01-01 false Detection of lymphocytic choriomeningitis contamination. 113.42 Section 113.42 Animals and Animal Products... § 113.42 Detection of lymphocytic choriomeningitis contamination. The test for detection of lymphocytic...

  15. 26 CFR 509.113 - Government wages, salaries, and pensions.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ...true Government wages, salaries, and pensions. 509.113 Section 509.113 Internal...113 Government wages, salaries, and pensions. (a) General. Under Article...salary, or similar compensation, or any pension, paid by Switzerland or...

  16. 26 CFR 509.113 - Government wages, salaries, and pensions.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ...false Government wages, salaries, and pensions. 509.113 Section 509.113 Internal...113 Government wages, salaries, and pensions. (a) General. Under Article...salary, or similar compensation, or any pension, paid by Switzerland or...

  17. 26 CFR 509.113 - Government wages, salaries, and pensions.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ...true Government wages, salaries, and pensions. 509.113 Section 509.113 Internal...113 Government wages, salaries, and pensions. (a) General. Under Article...salary, or similar compensation, or any pension, paid by Switzerland or...

  18. 26 CFR 509.113 - Government wages, salaries, and pensions.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ...true Government wages, salaries, and pensions. 509.113 Section 509.113 Internal...113 Government wages, salaries, and pensions. (a) General. Under Article...salary, or similar compensation, or any pension, paid by Switzerland or...

  19. 26 CFR 509.113 - Government wages, salaries, and pensions.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ...true Government wages, salaries, and pensions. 509.113 Section 509.113 Internal...113 Government wages, salaries, and pensions. (a) General. Under Article...salary, or similar compensation, or any pension, paid by Switzerland or...

  20. 46 CFR 113.30-3 - Means of communications.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 2010-10-01 false Means of communications. 113.30-3 Section 113.30-3...CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Internal Communications § 113.30-3 Means of...

  1. 49 CFR 1542.113 - Airport tenant security programs.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...tenant security programs. 1542.113 Section 1542.113 Transportation Other Regulations Relating to Transportation (Continued) TRANSPORTATION SECURITY ADMINISTRATION, DEPARTMENT OF HOMELAND SECURITY CIVIL AVIATION SECURITY...

  2. 49 CFR 1542.113 - Airport tenant security programs.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...tenant security programs. 1542.113 Section 1542.113 Transportation Other Regulations Relating to Transportation (Continued) TRANSPORTATION SECURITY ADMINISTRATION, DEPARTMENT OF HOMELAND SECURITY CIVIL AVIATION SECURITY...

  3. 49 CFR 1542.113 - Airport tenant security programs.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...tenant security programs. 1542.113 Section 1542.113 Transportation Other Regulations Relating to Transportation (Continued) TRANSPORTATION SECURITY ADMINISTRATION, DEPARTMENT OF HOMELAND SECURITY CIVIL AVIATION SECURITY...

  4. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...Applicability: Description of the secondary indium subcategory. 421.190 Section...MANUFACTURING POINT SOURCE CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium subcategory. The provisions...

  5. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...Applicability: Description of the secondary indium subcategory. 421.190 Section...MANUFACTURING POINT SOURCE CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium subcategory. The provisions...

  6. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...Applicability: Description of the secondary indium subcategory. 421.190 Section...MANUFACTURING POINT SOURCE CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium subcategory. The provisions...

  7. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...Applicability: Description of the secondary indium subcategory. 421.190 Section...MANUFACTURING POINT SOURCE CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium subcategory. The provisions...

  8. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...Applicability: Description of the secondary indium subcategory. 421.190 Section...MANUFACTURING POINT SOURCE CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium subcategory. The provisions...

  9. (Data in metric tons, unless noted) Domestic Production and Use: No indium was recovered from ores in the United States in 1995. Domestic indium

    E-print Network

    78 INDIUM (Data in metric tons, unless noted) Domestic Production and Use: No indium was recovered from ores in the United States in 1995. Domestic indium production was derived from the upgrading of lower-grade imported indium metal. Two companies, one each in New York and Rhode Island, were the major

  10. Directly deposited lead-indium-gold composite solder

    Microsoft Academic Search

    Yi-Chia Chen; Chen Y. Wang; Chin C. Lee

    1993-01-01

    Lead-indium-gold multilayer composite solder has been developed for bonding electronic devices. The composite is deposited directly on GaAs wafers in high vacuum to prevent indium oxidation. The gold layer on the composite further protects the indium layer from oxidation in the atmosphere. The GaAs dies are bonded to a gold-coated alumina substrate at a process temperature of 250°C. Nearly perfect

  11. Directly deposited fluxless lead-indium-gold composite solder

    Microsoft Academic Search

    Chen Y. Wang; Yi C. Chen; Chin C. Lee

    1993-01-01

    Lead-indium-gold multilayer composite solder has been developed for bonding electronic devices without the use of flux. The composite is deposited directly on GaAs wafers in high vacuum to inhibit indium oxidation. The gold layer on the composite further protects the indium layer from oxidation in atmosphere. Using the composite solder without flux, GaAs dies have been successfully bonded to alumina

  12. Pseudopotential band structure of indium nitride

    Microsoft Academic Search

    C. P. Foley; T. L. Tansley

    1986-01-01

    The band structure, density of states and the imaginary part of the dielectric function have been calculated for indium nitride by a pseudopotential method. Comparison with published reflectance data permits the identification of principal optical transitions at the GAMMA,M,K, and H symmetry points and we have been able to correct previous transition assignments. The calculated long-wavelength refractive index of 2.88

  13. Carrier mass measurements in degenerate indium nitride

    Microsoft Academic Search

    G. Pettinari; A. Polimeni; M. Capizzi; J. H. Blokland; P. C. M. Christianen; J. C. Maan; V. Lebedev; V. Cimalla; O. Ambacher

    2009-01-01

    We present photoluminescence measurements under intense magnetic fields ( B up to 30 T) in n -doped indium nitride samples with carrier concentration ranging from about 7.5×1017cm-3 to 5×1018cm-3 . The observation of transitions involving several Landau levels permits to determine the carrier-reduced mass mu around the Gamma point. Depending on the carrier concentration, we find mu ranging between 0.093m0

  14. InP (Indium Phosphide): Into the future

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.

    1989-01-01

    Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

  15. Method to Improve Indium Bump Bonding via Indium Oxide Removal Using a Multi-Step Plasma Process

    NASA Technical Reports Server (NTRS)

    Greer, H. Frank (Inventor); Jones, Todd J. (Inventor); Vasquez, Richard P. (Inventor); Hoenk, Michael E. (Inventor); Dickie, Matthew R. (Inventor); Nikzad, Shouleh (Inventor)

    2012-01-01

    A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.

  16. Thermoelectric Properties of Indium-Filled Skutterudites

    SciTech Connect

    He, Tao; Chen, Jiazhong; Rosenfeld, H. David; Subramanian, M.A. (Dupont)

    2008-09-18

    Structural, electrical, and thermal transport properties of CoSb{sub 3} partially filled with indium are reported. Polycrystalline samples of In{sub x}Co{sub 4}Sb{sub 12} (0 {le} x {le} 0.3) were prepared by solid-state reaction under a gas mixture of 5% H{sub 2} and 95% Ar. The solubility limit of the indium filling voids in CoSb{sub 3} was found to be close to 0.22. Synchrotron X-ray diffraction refinement of the x = 0.2 sample showed that the indium is located in the classic rattler site and has a substantially larger thermal factor than those of Co and Sb. The electrical resistivity, Seebeck coefficients, and thermal conductivity of the In{sub x}Co{sub 4}Sb{sub 12} samples were measured in the temperature range of 300-600 K. All samples showed metal-like behavior, and the large negative Seebeck coefficients indicated n-type conduction. The thermal conductivity decreased with increasing temperature for all samples. A thermoelectric figure-of-merit (ZT) {ge} 1 (n-type) has been achieved when x {ge} 0.2 in In{sub x}Co{sub 4}Sb{sub 12} at 575 K.

  17. Low Mass Dimuon Production in Indium-Indium Collisions at the CERN SPS

    E-print Network

    NA60 Collaboration; M. Floris; R. Arnaldi; R. Averbeck; K. Banicz; J. Castor; B. Chaurand; C. Cicalo; A. Colla; P. Cortese; S. Damjanovic; A. David; A. de Falco; A. Devaux; A. Dress; L. Ducroux; J. Farjeix; H. En'yo; A. Ferretti; A. Förster; P. Force; N. Guettet; A. Guichard; H. Gulkanian; J. Heuser; M. Keil; L. Kluberg; J. Lozano; C. Lourenço; F. Manso; A. Masoni; P. Martins; A. Neves; H. Ohnishi; C. Oppedisano; P. Parracho; P. Pillot; G. Puddu; E. Radermacher; P. Ramalhete; P. Rosinsky; E. Scomparin; J. Seixas; S. Serci; R. Shahoyan; P. Sonderegger; H. J. Specht; R. Tieulent; G. Usai; R. Veenhof; H. K. Wöhri

    2006-06-19

    NA60 is a fixed-target experiment at the CERN SPS which measured dimuon production in nucleus-nucleus and proton-nucleus collisions. In this paper we report on a precision measurement of low-mass muon pairs in 158 AGeV indium-indium collisions. A significant excess of pairs is observed above the yield expected from neutral meson decays. The excess can be isolated by subtraction of expected sources, thanks to the excellent mass resolution and large sample size.

  18. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    NASA Astrophysics Data System (ADS)

    Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; Wu, Yuh-Renn

    2014-09-01

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  19. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect

    Yang, Tsung-Jui; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shivaraman, Ravi; Speck, James S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  20. 49 CFR 385.113 - Administrative review.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...385.113 Transportation Other...Relating to Transportation (Continued...DEPARTMENT OF TRANSPORTATION FEDERAL...Monitoring System for Mexico-Domiciled...documents that support its argument...Administrator's decision will...

  1. 9 CFR 113.407 - Pullorum antigen.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...Reagents § 113.407 Pullorum antigen. Pullorum Antigen shall be produced from a culture of representative strains of Salmonella pullorum which are of known antigenic composition, high agglutinability, but are not sensitive to negative and...

  2. 36 CFR 1150.113 - Amicable resolution.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...Section 1150.113 Parks, Forests, and Public Property ARCHITECTURAL AND TRANSPORTATION BARRIERS COMPLIANCE BOARD PRACTICE...resolution is consistent with the provisions and objectives of the Architectural Barriers Act and section 502 of the Rehabilitation...

  3. 36 CFR 1150.113 - Amicable resolution.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...Section 1150.113 Parks, Forests, and Public Property ARCHITECTURAL AND TRANSPORTATION BARRIERS COMPLIANCE BOARD PRACTICE...resolution is consistent with the provisions and objectives of the Architectural Barriers Act and section 502 of the Rehabilitation...

  4. 13 CFR 113.515 - Compensation.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    13 Business Credit and Assistance 1...515 Section 113.515 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  5. 13 CFR 113.540 - Advertising.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    13 Business Credit and Assistance 1...540 Section 113.540 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  6. 13 CFR 113.510 - Recruitment.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    13 Business Credit and Assistance 1...510 Section 113.510 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  7. 13 CFR 113.540 - Advertising.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    13 Business Credit and Assistance 1...540 Section 113.540 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  8. 13 CFR 113.540 - Advertising.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    13 Business Credit and Assistance 1...540 Section 113.540 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  9. 13 CFR 113.525 - Fringe benefits.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    13 Business Credit and Assistance 1...525 Section 113.525 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  10. 13 CFR 113.525 - Fringe benefits.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    13 Business Credit and Assistance 1...525 Section 113.525 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  11. 13 CFR 113.525 - Fringe benefits.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    13 Business Credit and Assistance 1...525 Section 113.525 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  12. 13 CFR 113.525 - Fringe benefits.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    13 Business Credit and Assistance 1...525 Section 113.525 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  13. 13 CFR 113.515 - Compensation.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    13 Business Credit and Assistance 1...515 Section 113.515 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  14. 13 CFR 113.510 - Recruitment.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    13 Business Credit and Assistance 1...510 Section 113.510 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  15. 13 CFR 113.510 - Recruitment.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    13 Business Credit and Assistance 1...510 Section 113.510 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  16. 13 CFR 113.510 - Recruitment.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    13 Business Credit and Assistance 1...510 Section 113.510 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  17. 13 CFR 113.515 - Compensation.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    13 Business Credit and Assistance 1...515 Section 113.515 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  18. 13 CFR 113.510 - Recruitment.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    13 Business Credit and Assistance 1...510 Section 113.510 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  19. 13 CFR 113.515 - Compensation.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    13 Business Credit and Assistance 1...515 Section 113.515 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  20. 13 CFR 113.525 - Fringe benefits.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    13 Business Credit and Assistance 1...525 Section 113.525 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  1. 13 CFR 113.515 - Compensation.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    13 Business Credit and Assistance 1...515 Section 113.515 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION IN...Discrimination on the Basis of Sex in Employment in Education Programs...

  2. 27 CFR 479.113 - Conditional importation.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ...Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS Importation and Exportation Importation § 479.113 Conditional...

  3. 27 CFR 479.113 - Conditional importation.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ...Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS Importation and Exportation Importation § 479.113 Conditional...

  4. 27 CFR 479.113 - Conditional importation.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ...Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS Importation and Exportation Importation § 479.113 Conditional...

  5. 27 CFR 479.113 - Conditional importation.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ...Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS Importation and Exportation Importation § 479.113 Conditional...

  6. 27 CFR 479.113 - Conditional importation.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ...Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS Importation and Exportation Importation § 479.113 Conditional...

  7. 40 CFR 113.5 - Exclusions.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...PROTECTION AGENCY (CONTINUED) WATER PROGRAMS LIABILITY LIMITS FOR SMALL ONSHORE STORAGE FACILITIES Oil Storage Facilities § 113.5 Exclusions...is more than their fixed oil storage capacity. (b) Vehicles and...

  8. 40 CFR 113.1 - Purpose.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...PROTECTION AGENCY (CONTINUED) WATER PROGRAMS LIABILITY LIMITS FOR SMALL ONSHORE STORAGE FACILITIES Oil Storage Facilities § 113.1...limits for small onshore oil storage facilities with fixed capacity of 1,000 barrels or...

  9. 40 CFR 113.2 - Applicability.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...AGENCY (CONTINUED) WATER PROGRAMS LIABILITY...FOR SMALL ONSHORE STORAGE FACILITIES Oil Storage Facilities § 113...to all onshore oil storage facilities with fixed capacity of 1,000 barrels...discharge to the waters of the United...

  10. 9 CFR 113.327 - Bronchitis Vaccine.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...be tested for pathogens by the chicken embryo inoculation test prescribed in § 113...For each dilution, inject at least five embryos, 9 to 11 days old, in the allantoic...days incubation, examine the surviving embryos for evidence of infection....

  11. 46 CFR 113.25-1 - Applicability.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General...vessels. (b) Section 113.25-25 applies to each manned ocean and coastwise barge of over 100 gross tons if the crew...

  12. 49 CFR 383.113 - Required skills.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...FEDERAL MOTOR CARRIER SAFETY REGULATIONS COMMERCIAL DRIVER'S LICENSE STANDARDS; REQUIREMENTS AND PENALTIES Required Knowledge and Skills § 383.113 Required skills. (a) Basic vehicle control skills. All applicants for a CDL...

  13. 9 CFR 113.114 - Tetanus Toxoid.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...a) Purity test. Final container samples of completed product from each serial and subserial shall be tested for viable bacteria and fungi as provided in § 113.26. (b) Safety test. Bulk or final container samples of completed product from...

  14. 9 CFR 113.406 - Tuberculin, Intradermic.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...for purity as provided in this paragraph. (1) Final container samples of completed product shall be tested for viable bacteria and fungi as prescribed in § 113.26. (2) A 20 ml sample shall be centrifuged and the sediment examined...

  15. 9 CFR 113.406 - Tuberculin, Intradermic.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...for purity as provided in this paragraph. (1) Final container samples of completed product shall be tested for viable bacteria and fungi as prescribed in § 113.26. (2) A 20 ml sample shall be centrifuged and the sediment examined...

  16. 9 CFR 113.114 - Tetanus Toxoid.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...a) Purity test. Final container samples of completed product from each serial and subserial shall be tested for viable bacteria and fungi as provided in § 113.26. (b) Safety test. Bulk or final container samples of completed product from...

  17. 9 CFR 113.406 - Tuberculin, Intradermic.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...Final container samples of completed product shall be tested for viable bacteria and fungi as prescribed in § 113.26. (2) A 20 ml sample shall be centrifuged and the sediment examined microscopically for the presence of acidfast...

  18. OCEAN DRILLING PROGRAM LEG 113 PRELIMINARY REPORT

    E-print Network

    James P Kennett Co-Chief Scientist, Leg 113 Graduate School of Oceanography University of Rhode Island, University of Rhode Island, Narraganett, Rhode Island 02882-1197) Suzanne 0'Connell, ODP Staff Scientist

  19. 13 CFR 113.410 - Comparable facilities.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...Activities Prohibited § 113.410 Comparable facilities. A recipient may provide separate toilet, locker room, and shower facilities on the basis of sex, but such facilities provided for students of one sex shall be comparable to such facilities...

  20. 12 CFR 708a.113 - Voting guidelines.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...Banks § 708a.113 Voting guidelines. A converting credit...NCUA provides the following guidelines as suggestions to help a...regulatory obligations. These guidelines are not an exhaustive checklist...conversion may have substantive and procedural requirements that...

  1. 12 CFR 708a.113 - Voting guidelines.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...Banks § 708a.113 Voting guidelines. A converting credit...NCUA provides the following guidelines as suggestions to help a...regulatory obligations. These guidelines are not an exhaustive checklist...conversion may have substantive and procedural requirements that...

  2. 12 CFR 708a.113 - Voting guidelines.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...Banks § 708a.113 Voting guidelines. A converting credit...NCUA provides the following guidelines as suggestions to help a...regulatory obligations. These guidelines are not an exhaustive checklist...conversion may have substantive and procedural requirements that...

  3. 29 CFR 1985.113 - Judicial enforcement.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...DEPARTMENT OF LABOR (CONTINUED) PROCEDURES FOR HANDLING RETALIATION COMPLAINTS UNDER THE EMPLOYEE PROTECTION PROVISION OF THE CONSUMER FINANCIAL PROTECTION ACT OF 2010 Miscellaneous Provisions § 1985.113 Judicial enforcement. Whenever...

  4. 46 CFR 113.37-1 - Applicability.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Shaft Speed and Thrust Indicators § 113.37-1 Applicability. This subpart applies to all self-propelled...

  5. 46 CFR 113.37-1 - Applicability.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Shaft Speed and Thrust Indicators § 113.37-1 Applicability. This subpart applies to all self-propelled...

  6. 46 CFR 113.37-1 - Applicability.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Shaft Speed and Thrust Indicators § 113.37-1 Applicability. This subpart applies to all self-propelled...

  7. 46 CFR 113.37-1 - Applicability.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Shaft Speed and Thrust Indicators § 113.37-1 Applicability. This subpart applies to all self-propelled...

  8. 46 CFR 113.50-15 - Loudspeakers.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...AND EQUIPMENT Public Address Systems § 113.50-15 Loudspeakers. (a) Loudspeakers must be located to eliminate feedback or other interference which would degrade communication. (b) Loudspeakers must be located to provide...

  9. 46 CFR 113.50-15 - Loudspeakers.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...AND EQUIPMENT Public Address Systems § 113.50-15 Loudspeakers. (a) Loudspeakers must be located to eliminate feedback or other interference which would degrade communication. (b) Loudspeakers must be located to provide...

  10. 40 CFR 11.3 - Responsibilities.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... Section 11.3 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GENERAL SECURITY CLASSIFICATION...Heads of Staff Offices, Directors of National Environmental Research Centers are responsible for designating an...

  11. 40 CFR 11.3 - Responsibilities.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... Section 11.3 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GENERAL SECURITY CLASSIFICATION...Heads of Staff Offices, Directors of National Environmental Research Centers are responsible for designating an...

  12. 40 CFR 11.3 - Responsibilities.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... Section 11.3 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GENERAL SECURITY CLASSIFICATION...Heads of Staff Offices, Directors of National Environmental Research Centers are responsible for designating an...

  13. 40 CFR 11.3 - Responsibilities.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... Section 11.3 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GENERAL SECURITY CLASSIFICATION...Heads of Staff Offices, Directors of National Environmental Research Centers are responsible for designating an...

  14. 49 CFR 585.113 - Applicability.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...NATIONAL HIGHWAY TRAFFIC SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) PHASE-IN REPORTING REQUIREMENTS Roof Crush Resistance Phase-in Reporting Requirements § 585.113 Applicability. This subpart applies to manufacturers of...

  15. 49 CFR 585.113 - Applicability.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...NATIONAL HIGHWAY TRAFFIC SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) PHASE-IN REPORTING REQUIREMENTS Roof Crush Resistance Phase-in Reporting Requirements § 585.113 Applicability. This subpart applies to manufacturers of...

  16. 49 CFR 585.113 - Applicability.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...NATIONAL HIGHWAY TRAFFIC SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) PHASE-IN REPORTING REQUIREMENTS Roof Crush Resistance Phase-in Reporting Requirements § 585.113 Applicability. This subpart applies to manufacturers of...

  17. 49 CFR 585.113 - Applicability.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...NATIONAL HIGHWAY TRAFFIC SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) PHASE-IN REPORTING REQUIREMENTS Roof Crush Resistance Phase-in Reporting Requirements § 585.113 Applicability. This subpart applies to manufacturers of...

  18. 29 CFR 1980.113 - Judicial enforcement.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...PROCEDURES FOR THE HANDLING OF DISCRIMINATION COMPLAINTS UNDER SECTION 806 OF THE CORPORATE AND CRIMINAL FRAUD ACCOUNTABILITY ACT OF 2002, TITLE VIII OF THE SARBANES-OXLEY ACT OF 2002 Miscellaneous Provisions § 1980.113 Judicial...

  19. 49 CFR 383.113 - Required skills.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...FEDERAL MOTOR CARRIER SAFETY REGULATIONS COMMERCIAL DRIVER'S LICENSE STANDARDS; REQUIREMENTS AND PENALTIES Required Knowledge and Skills § 383.113 Required skills. (a) Pre-trip vehicle inspection skills. Applicants for a CDL...

  20. 49 CFR 383.113 - Required skills.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...FEDERAL MOTOR CARRIER SAFETY REGULATIONS COMMERCIAL DRIVER'S LICENSE STANDARDS; REQUIREMENTS AND PENALTIES Required Knowledge and Skills § 383.113 Required skills. (a) Pre-trip vehicle inspection skills. Applicants for a CDL...

  1. 49 CFR 383.113 - Required skills.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...FEDERAL MOTOR CARRIER SAFETY REGULATIONS COMMERCIAL DRIVER'S LICENSE STANDARDS; REQUIREMENTS AND PENALTIES Required Knowledge and Skills § 383.113 Required skills. (a) Pre-trip vehicle inspection skills. Applicants for a CDL...

  2. 49 CFR 383.113 - Required skills.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...FEDERAL MOTOR CARRIER SAFETY REGULATIONS COMMERCIAL DRIVER'S LICENSE STANDARDS; REQUIREMENTS AND PENALTIES Required Knowledge and Skills § 383.113 Required skills. (a) Pre-trip vehicle inspection skills. Applicants for a CDL...

  3. 46 CFR 171.113 - Trunks.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...OF HOMELAND SECURITY (CONTINUED) SUBDIVISION AND STABILITY SPECIAL RULES PERTAINING TO VESSELS CARRYING PASSENGERS Penetrations and Openings in Watertight Bulkheads § 171.113 Trunks. (a) For the purpose of this section, “trunk”...

  4. 46 CFR 171.113 - Trunks.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...OF HOMELAND SECURITY (CONTINUED) SUBDIVISION AND STABILITY SPECIAL RULES PERTAINING TO VESSELS CARRYING PASSENGERS Penetrations and Openings in Watertight Bulkheads § 171.113 Trunks. (a) For the purpose of this section, “trunk”...

  5. 46 CFR 171.113 - Trunks.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...OF HOMELAND SECURITY (CONTINUED) SUBDIVISION AND STABILITY SPECIAL RULES PERTAINING TO VESSELS CARRYING PASSENGERS Penetrations and Openings in Watertight Bulkheads § 171.113 Trunks. (a) For the purpose of this section, “trunk”...

  6. 46 CFR 171.113 - Trunks.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...OF HOMELAND SECURITY (CONTINUED) SUBDIVISION AND STABILITY SPECIAL RULES PERTAINING TO VESSELS CARRYING PASSENGERS Penetrations and Openings in Watertight Bulkheads § 171.113 Trunks. (a) For the purpose of this section, “trunk”...

  7. 46 CFR 171.113 - Trunks.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...OF HOMELAND SECURITY (CONTINUED) SUBDIVISION AND STABILITY SPECIAL RULES PERTAINING TO VESSELS CARRYING PASSENGERS Penetrations and Openings in Watertight Bulkheads § 171.113 Trunks. (a) For the purpose of this section, “trunk”...

  8. 9 CFR 113.5 - General testing.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Applicability § 113.5 General testing. (a) No biological product shall be...

  9. 9 CFR 113.2 - Testing aids.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Applicability § 113.2 Testing aids. To better ensure consistent and...

  10. 9 CFR 113.1 - Compliance.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Applicability § 113.1 Compliance. The regulations in this part apply to each serial or...

  11. 9 CFR 113.2 - Testing aids.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Applicability § 113.2 Testing aids. To better ensure consistent and...

  12. Comparison of indium metrology using LEXES and SIMS [semiconductor doping

    Microsoft Academic Search

    Dimitry Kouzminov; Yupu Li; Jerry Hunter; Houda Graoui; Amir Al-Bayati; Majeed Foad; P. Staub; C. Hombourger; M. Schuhmacher

    2002-01-01

    There has been increasing interest in using Indium (In+) as the channel and substrate dopant in place of the lighter boron atom. Indium is a heavier atom and hence yields a more controllable and steeper dopant profile, which is extremely important to reduce short channel effects (SCE) in modem MOSFETs. Studies have been done on using In as the channel

  13. Two-Step Plasma Process for Cleaning Indium Bonding Bumps

    NASA Technical Reports Server (NTRS)

    Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

    2009-01-01

    A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

  14. Preparation and Characterization of Indium Oxide and Indium Tin Oxide Films by Activated Reactive Evaporation

    Microsoft Academic Search

    K. Narasimha Rao; Sanjay Kashyap

    2006-01-01

    Transparent and conducting oxide films find many applications because of their excellent properties such as high optical transparency, low surface resistance, high infrared reflectance, etc. Realization of these properties depend upon the choice of the deposition technique and the control of deposition parameters. In this paper, we report the preparation of highly transparent and conducting films of indium oxide (In2O3)

  15. J/{psi} production in indium-indium collisions at SPS energies

    SciTech Connect

    Pillot, P.; Ducroux, L.; Guichard, A.; Tieulent, R. [IPN-Lyon, Univ. Claude Bernard Lyon-I, Lyon (France); CNRS-IN2P3, Lyon (France); Arnaldi, R.; Colla, A.; Cortese, P.; Ferretti, A.; Oppedisano, C.; Scomparin, E. [Univ. di Torino (Italy); INFN (Italy); Averbeck, R.; Drees, A. [SUNY Stony Brook, New York (United States); Banicz, K.; Keil, M. [CERN, Geneva (Switzerland); Univ. Heidelberg, Heidelberg (Germany); Castor, J.; Devaux, A.; Force, P.; Manso, F. [LPC, Univ. Blaise Pascal, Clermont-Ferrand (France); CNRS-IN2P3, Clermont-Ferrand (France); Chaurand, B. [LLR and CNRS-IN2P3, Palaiseau (France); Cicalo, C. [Univ. di Cagliari, Cagliari (Italy); INFN, Cagliari (Italy)] (and others)

    2006-01-12

    The NA60 experiment collected data on dimuon production in indium-indium collisions at 158 GeV/c per incident nucleon, in year 2003, to contribute to the clarification of several questions raised by previous experiments studying high-energy heavy-ion physics at the CERN SPS in search of the quark gluon plasma. Among these previous results stands the observation, by NA50, that the production yield of J/{psi} mesons is suppressed in central Pb-Pb collisions beyond the normal nuclear absorption defined by proton-nucleus data. By comparing the centrality dependence of the suppression pattern between different colliding systems, S-U, Pb-Pb and In-In, we should be able to identify the corresponding scaling variable, and the physics mechanism driving the suppression. In this paper, we will present the ratio of J/{psi} and Drell-Yan production cross-sections in indium-indium collisions, in three centrality bins, and how these values compare to previous measurements. We will also present a study of the transverse momentum distributions of the J/{psi} mesons, in seven centrality bins.

  16. Indium selenides: structural characteristics, synthesis and their thermoelectric performances.

    PubMed

    Han, Guang; Chen, Zhi-Gang; Drennan, John; Zou, Jin

    2014-07-23

    Indium selenides have attracted extensive attention in high-efficiency thermoelectrics for waste heat energy conversion due to their extraordinary and tunable electrical and thermal properties. This Review aims to provide a thorough summary of the structural characteristics (e.g. crystal structures, phase transformations, and structural vacancies) and synthetic methods (e.g. bulk materials, thin films, and nanostructures) of various indium selenides, and then summarize the recent progress on exploring indium selenides as high-efficiency thermoelectric materials. By highlighting challenges and opportunities in the end, this Review intends to shine some light on the possible approaches for thermoelectric performance enhancement of indium selenides, which should open up an opportunity for applying indium selenides in the next-generation thermoelectric devices. PMID:24729463

  17. Fabrication, structure and mechanical properties of indium nanopillars

    SciTech Connect

    Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2010-01-01

    Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

  18. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2010. Two companies,

    E-print Network

    74 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium Island, produced indium metal and indium products by upgrading lower grade imported indium metal. High-purity indium shapes, alloys, and compounds were also produced from imported indium by several additional firms

  19. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2004. Two companies,

    E-print Network

    80 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium Island, produced indium metal and indium products by upgrading lower grade imported indium metal. High-purity indium shapes, alloys, and compounds were also produced from imported indium by several additional firms

  20. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2012. Two companies,

    E-print Network

    74 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium Island, produced indium metal and indium products by upgrading lower grade imported indium metal. High-purity indium shapes, alloys, and compounds were also produced from imported indium by several additional firms

  1. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2011. Two companies,

    E-print Network

    74 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium Island, produced indium metal and indium products by upgrading lower grade imported indium metal. High-purity indium shapes, alloys, and compounds were also produced from imported indium by several additional firms

  2. By Robert D. Brown, Jr. Domestic indium production was confined 227, containing 20% indium, 2.8% silver, and

    E-print Network

    to domestic mines. Two companies, one each in conventional 63% tin-37% lead solder. New York and Rhode Island at domestic mines; all the standard grade indium was imported. Indium can be refined to purities up to 99, video monitors, etc. They are also used to defog aircraft and locomotive windshields and to keep glass

  3. Organoindium azides: new precursors to indium nitride

    Microsoft Academic Search

    Roland A. Fischer; Harald Sussek; Alexander Miehr; Hans Pritzkow; Eberhard Herdtweck

    1997-01-01

    The synthesis, properties and the molecular structure in the solid state of triazido(tripyridino)indium (1), the mixed coordination polymer {(CF3SO3)In[(CH2)3NMe2)]2(?-N3)In[(CH2)3NMe2)]2}. (2) and the polymeric monoazide {(N3)In[(CH2)3NMe2)]2} (3) are reported. Some aspects of the precursor chemistry of 1–3 related to the synthesis of InN thin films are discussed, with special emphasis on the aspect of the accessible chemical purity of the precursors.

  4. Low frequency pressure modulation of indium antimonide

    SciTech Connect

    Hallock, Gary A. [University of Texas at Austin, Austin, Texas 78712-0240 (United States); Meier, Mark A. [ExxonMobil Upstream Research Company, Houston, Texas 77252-2189 (United States)

    2012-07-15

    A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient {alpha} of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

  5. Indium oxide film formation by O 2 cluster ion-assisted deposition

    Microsoft Academic Search

    Wei Qin; Ronald Philip Howson; Makoto Akizuki; Jiro Matsuo; Gikan Takaoka; Isao Yamada

    1998-01-01

    It has been difficult to deposit high quality indium tin oxide (ITO) films on to substrates at low temperature (below 100 °C) or subjected to post-deposition annealing. We have developed a new process based on O2 cluster ion assisted deposition of metallic indium and carried out deposition of high quality indium oxide films. At optimized indium deposition rate, a film

  6. Development of a 20x20cm2 'hot' indium-alloy hermetic seal

    E-print Network

    1 Development of a 20x20cm2 'hot' indium-alloy hermetic seal in an inert atmosphere for photo Use indium alloys: - industry standard approach - soft metal - low melting point - essentially zero into the ceramic body and filled with indium alloy (InBi) Indium alloy wets copper surface and makes a strong Ni

  7. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs

    E-print Network

    Pearton, Stephen J.

    RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs Yu, North Carolina 27709, USA Depletion-mode indium zinc oxide channel thin film transistors TFTs with gate semiconductors such as zinc oxide, zinc tin oxide, indium gallium oxide, and indium gallium zinc tin oxide have

  8. Patterning of Indium Tin Oxide Films

    NASA Technical Reports Server (NTRS)

    Immer, Christopher

    2008-01-01

    A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

  9. Discovery of Cadmium, Indium, and Tin Isotopes

    NASA Astrophysics Data System (ADS)

    Amos, Stephanie; Thoennessen, Michael

    2009-10-01

    As of today, no comprehensive study has been made covering the initial observations and identifications of isotopes. A project has been undertaken at MSU to document the discovery of all the known isotopes. The criteria defining discovery of a given isotope is the publication of clear mass and element assignment in a refereed journal. Prior to the current work the documentation of the discovery of eleven elements had been completed^1. These elements are cerium^2, arsenic, gold, tungsten, krypton, silver, vanadium, einsteinium, iron, barium, and cobalt. We will present the new documentation for the cadmium, indium, and tin isotopes. Thirty-seven cadmium isotopes, thirty-eight indium isotopes, and thirty-eight tin isotopes have been discovered so far. The description for each discovered isotope includes the year of discovery, the article published on the discovery, the article's author, the method of production, the method of identification, and any previous information concerning the isotope discovery. A summary and overview of all ˜500 isotopes documented so far as a function of discovery year, method and place will also be presented. ^1http://www.nscl.msu.edu/˜thoennes/2009/discovery.htm ^2J.Q. Ginepro, J. Snyder, and M. Thoennessen, At. Data Nucl. Data. Tables, in press (2009), doi:10.1016/j.adt.2009.06.002

  10. Tumour scanning with indium-111 dihaematoporphyrin ether.

    PubMed Central

    Quastel, M. R.; Richter, A. M.; Levy, J. G.

    1990-01-01

    Photofrin II (dihaematoporphyrin ether/ester, DHE) was labelled with indium-111 and its biodistribution in tumour bearing mice compared with that of 111In chloride. The uptake and clearance of 111In labelled DHE differed markedly from that of indium-111 chloride in that the former was not taken up by the tissues as much as the latter. Scintillation scanning with a gamma-camera showed marked uptake of both 111In agents at the site of the tumour, but a much lower tissue background (excluding the abdominal organs) for the mice given 111In DHE. Tumour:muscle ratios of dissected tissues were 2-3 times higher in 111In DHE treated animals as compared to the uptake of 111In chloride. There was a distinct difference in the pattern of distribution of the two 111In preparations in the tissues. The major accumulation of 111In chloride was in the kidneys, whereas the highest uptake of 111In DHE was in the liver, the organ in which unlabelled porphyrins accumulate. Extraction and testing of materials from tumours of 111In DHE treated animals indicated that most of the tumour extractable 111In had remained associated with the porphyrin in vivo up to 4 days after injection. Images Figure 1 PMID:2147858

  11. STS-113 crew breakfast before launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- The STS-113 crew enjoys a snack before suiting up for launch. Seated left to right are Mission Specialists John Herrington and Michael Lopez-Alegria, Pilot Paul Lockhart and Commander James Wetherbee; Expedition 6 flight engineer Donald Pettit, Commander Ken Bowersox and flight engineer Nikolai Budarin. STS-113 is the 16th American assembly flight to the International Space Station. The primary mission is bringing the Expedition 6 crew to the Station and returning the Expedition 5 crew to Earth. The major objective of the mission is delivery of the Port 1 (P1) Integrated Truss Assembly, which will be attached to the port side of the S0 truss. Three spacewalks are planned to install and activate the truss and its associated equipment. Launch of Space Shuttle Endeavour on mission STS-113 is scheduled for Nov. 11 at 12:58 a.m. EST.

  12. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- As the clouds of smoke and steam roll away beneath it, Space Shuttle Endeavour blazes into the night sky on mission STS-113. Liftoff from Launch Pad 39A occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  13. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- Launch Pad 39A is illuminated as Space Shuttle Endeavour blazes into the sky on mission STS-113. Liftoff from Launch Pad 39A occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  14. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -Space Shuttle Endeavour roars into the black sky on columns of fire as it lifts off Launch Pad 39A on mission STS-113. Liftoff occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey. [Photo by Scott Andrews

  15. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- Space Shuttle Endeavour climbs into the black sky as it lifts off Launch Pad 39A on mission STS-113. Liftoff occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey. [Photo by Scott Andrews

  16. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- Space Shuttle Endeavour, painting a swath of light on nearby water, blazes into the night sky on mission STS-113. Liftoff from Launch Pad 39A occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  17. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. - Blue mach diamonds appear behind the main engine nozzles on Space Shuttle Endeavour as it roars off the launch pad on mission STS-113. Liftoff from Launch Pad 39A occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  18. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- Space Shuttle Endeavour blazes into the night sky on mission STS-113. Liftoff from Launch Pad 39A occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  19. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. - From a blaze of fire and smoke, Space Shuttle Endeavour roars off the launch pad on mission STS-113. Liftoff from Launch Pad 39A occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  20. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- From a blaze of fire and smoke, Space Shuttle Endeavour roars off the launch pad on mission STS-113. Liftoff from Launch Pad 39A occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  1. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. - Launch Pad 39A is illuminated as Space Shuttle Endeavour blazes into the sky on mission STS-113. Liftoff from Launch Pad 39A occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  2. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. - As the clouds of smoke and steam roll away into the darkness, Space Shuttle Endeavour blazes into the night sky on mission STS-113. Liftoff from Launch Pad 39A occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  3. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. - Water near Launch Pad 39A provides a mirror image of Space Shuttle Endeavour blazing a path into the night sky after launch on mission STS-113. Liftoff occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey.

  4. Determination of indium in rocks by substoichiometric radioisotope dilution analysis

    USGS Publications Warehouse

    Paul, Greenland L.; Campbell, E.Y.

    1973-01-01

    Rocks containing 10-140 ng of indium per g are decomposed with hydrofluoric and nitric acids in the presence of 114In. Indium is separated from other constituents by sequential extractions of the bromide, cupferronate, and acetylacetonate, and is then reacted with a substoichiometric amont of EDTA. Excess of indium is removed by acetylacetone extraction and the specific activity of the complexed fraction is determined by counting 114In. Analyses of the U.S.G.S. standard rocks are reported. These show good agreement with previous neutron activation analyses. Repetitive rock analyses indicated an analytical precision of ??4-7%. ?? 1973.

  5. High-efficiency indium tin oxide/indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

    1989-01-01

    Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

  6. Mn-implanted, polycrystalline indium tin oxide and indium oxide films

    NASA Astrophysics Data System (ADS)

    Scarlat, Camelia; Vinnichenko, Mykola; Xu, Qingyu; Bürger, Danilo; Zhou, Shengqiang; Kolitsch, Andreas; Grenzer, Jörg; Helm, Manfred; Schmidt, Heidemarie

    2009-05-01

    Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2/Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

  7. Convection sensitivity and thermal analyses for indium and indium-lead mixing experiment (74-18)

    NASA Technical Reports Server (NTRS)

    Bourgeois, S. V.; Doty, J. P.

    1976-01-01

    Sounding rocket Experiment 74-18 was designed to demonstrate the effects of the Black Brandt rocket acceleration levels (during the low-g coast phase of its flight) on the motion of a liquid metal system to assist in preflight design. Some post flight analyses were also conducted. Preflight studies consisted of heat transfer analysis and convection sensitivity and convection modeling analyses which aided in the: (1) final selection of fluid materials (indium-lead melts rather than paraffins); (2) design and timing of heater and quench system; and (3) preflight predictions of the degree of lead penetration into the pure indium segment of the fluid. Postflight studies involved: (1) updating the convection sensitivity calculations by utilizing actual flight gravity levels; and (2) modeling the mixing in the flight samples.

  8. Preparation and Characterization of Indium Oxide and Indium Tin Oxide Films by Activated Reactive Evaporation

    NASA Astrophysics Data System (ADS)

    Rao, K. Narasimha; Kashyap, Sanjay

    Transparent and conducting oxide films find many applications because of their excellent properties such as high optical transparency, low surface resistance, high infrared reflectance, etc. Realization of these properties depend upon the choice of the deposition technique and the control of deposition parameters. In this paper, we report the preparation of highly transparent and conducting films of indium oxide (In2O3) and indium tin oxide (ITO) by activated reactive evaporation on glass substrates. These films were deposited by evaporating pure indium and 90% In + 10% Sn alloy using an electron gun in the presence of oxygen ions at ambient temperature. Films of different thickness have been prepared and their optical, electrical and structural properties are studied. In2O3 films showed higher transparency (90%) compared to ITO films (85%) but the electrical resistivity was observed to be little higher (2.5 × 10-3 ? cm) compared to ITO films (6 × 10-4 ?cm). Hall measurements on aged ITO films gave the charge density of 3 × 1020 per cm3 and mobility 35.6 cm2/V-s. The refractive index and extinction coefficient were found to be around 2.0 and 0.005 for ITO films and 2.10 and 0.001 for In2O3 films at 550 nm respectively. ITO and In2O3 films were amorphous in nature for lesser thickness, but for thicker films, the partial crystallinity was observed.

  9. TUDE DES NIVEAUX EXCITS DE L'INDIUM-115 C 1-165 TUDE DES NIVEAUX EXCITS DE L'INDIUM-115

    E-print Network

    Paris-Sud XI, Université de

    �TUDE DES NIVEAUX EXCIT�S DE L'INDIUM-115 C 1- 165 �TUDE DES NIVEAUX EXCIT�S DE L'INDIUM-115 par R gamma directe et en coïncidence, on étudie la désexcitation des niveaux de l'indium-115entre 900et 1600 keV, qui peuvent être considérés comme des étatsvibra- tionnels. Abstract. -De-excitation of indium

  10. 9 CFR 113.30 - Detection of Salmonella contamination.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...2012-01-01 false Detection of Salmonella contamination. 113.30 Section...Procedures § 113.30 Detection of Salmonella contamination. The test for detection of Salmonella contamination provided in this...

  11. 9 CFR 113.30 - Detection of Salmonella contamination.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

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  12. 9 CFR 113.30 - Detection of Salmonella contamination.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

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  13. 13 CFR 113.545 - Pre-employment inquiries.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

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  14. 13 CFR 113.435 - Employment assistance to students.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

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  15. 13 CFR 113.435 - Employment assistance to students.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

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  16. 13 CFR 113.545 - Pre-employment inquiries.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

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  17. 13 CFR 113.435 - Employment assistance to students.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

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  18. 13 CFR 113.545 - Pre-employment inquiries.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

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  19. 13 CFR 113.545 - Pre-employment inquiries.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

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  20. 13 CFR 113.545 - Pre-employment inquiries.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

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  1. 13 CFR 113.435 - Employment assistance to students.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

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    Code of Federal Regulations, 2014 CFR

    2014-01-01

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  3. 9 CFR 113.33 - Mouse safety tests.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...2010-01-01 false Mouse safety tests. 113.33 Section...Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE...Procedures § 113.33 Mouse safety tests. One of the mouse safety tests provided in...

  4. 9 CFR 113.33 - Mouse safety tests.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

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  5. 23 CFR 470.113 - National Highway System procedures.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    23 Highways 1 2014-04-01 2014-04-01 false National Highway System procedures. 470.113 Section 470.113 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION PLANNING AND RESEARCH HIGHWAY...

  6. 23 CFR 470.113 - National Highway System procedures.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

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  7. 23 CFR 470.113 - National Highway System procedures.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

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  8. 23 CFR 470.113 - National Highway System procedures.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

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  9. 23 CFR 470.113 - National Highway System procedures.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

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  10. 7 CFR 1421.113 - Recourse marketing assistance loans.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

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    Code of Federal Regulations, 2013 CFR

    2013-01-01

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  12. 7 CFR 1421.113 - Recourse marketing assistance loans.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

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  13. 9 CFR 113.115 - Staphylococcus Aureus Bacterin-Toxoid.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

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  14. 9 CFR 113.115 - Staphylococcus Aureus Bacterin-Toxoid.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

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  15. 9 CFR 113.115 - Staphylococcus Aureus Bacterin-Toxoid.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

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  16. 48 CFR 432.113 - Customary contract financing.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...2011-10-01 false Customary contract financing. 432.113...Regulations System DEPARTMENT OF AGRICULTURE GENERAL CONTRACTING REQUIREMENTS CONTRACT FINANCING Non-Commercial... 432.113 Customary contract financing. The...

  17. 46 CFR 113.25-15 - Distribution panels.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...2010-10-01 2010-10-01 false Distribution panels. 113.25-15 Section...ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-15 Distribution panels. Each distribution...

  18. 46 CFR 113.25-16 - Overcurrent protection.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...25-16 Section 113.25-16 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-16...

  19. 46 CFR 113.30-20 - General requirements.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...30-20 Section 113.30-20 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Internal Communications § 113.30-20 General...

  20. 46 CFR 113.25-16 - Overcurrent protection.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...25-16 Section 113.25-16 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-16...

  1. 46 CFR 113.25-20 - Marking of equipment.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...25-20 Section 113.25-20 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-20...

  2. 46 CFR 113.50-20 - Distribution of cable runs.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...50-20 Section 113.50-20 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Public Address Systems § 113.50-20 Distribution...

  3. 40 CFR 65.113 - Standards: Sampling connection systems.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...Sampling connection systems. 65.113 Section 65.113 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED...Sampling connection systems. (a) Compliance...process line or to a fuel gas system; or...

  4. 40 CFR 65.113 - Standards: Sampling connection systems.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...Sampling connection systems. 65.113 Section 65.113 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED...Sampling connection systems. (a) Compliance...process line or to a fuel gas system; or...

  5. 24 CFR 206.113 - Late charge and interest.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 2 2010-04-01 2010-04-01 false Late charge and interest. 206.113 Section 206...Obligations Mortgage Insurance Premiums § 206.113 Late charge and interest. (a) Late charge. Initial MIP remitted to the...

  6. 46 CFR 113.05-7 - Environmental tests.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...2012-10-01 false Environmental tests. 113.05-7...CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM...Provisions § 113.05-7 Environmental tests. Communication...monitoring equipment must meet the environmental tests of—...

  7. 46 CFR 113.05-7 - Environmental tests.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...2011-10-01 false Environmental tests. 113.05-7...CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM...Provisions § 113.05-7 Environmental tests. Communication...monitoring equipment must meet the environmental tests of—...

  8. 46 CFR 113.05-7 - Environmental tests.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...2013-10-01 false Environmental tests. 113.05-7...CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM...Provisions § 113.05-7 Environmental tests. Communication...monitoring equipment must meet the environmental tests of—...

  9. 36 CFR 251.113 - Instrument of authorization.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 251.113 Section 251.113 Parks, Forests, and Public Property FOREST SERVICE, DEPARTMENT OF AGRICULTURE LAND...authority to construct and/or use facilities and structures on National Forest System lands for access to non-Federal...

  10. 36 CFR 251.113 - Instrument of authorization.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 251.113 Section 251.113 Parks, Forests, and Public Property FOREST SERVICE, DEPARTMENT OF AGRICULTURE LAND...authority to construct and/or use facilities and structures on National Forest System lands for access to non-Federal...

  11. 46 CFR 113.05-7 - Environmental tests.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...2014-10-01 false Environmental tests. 113.05-7...CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM...Provisions § 113.05-7 Environmental tests. Communication...monitoring equipment must meet the environmental tests of—...

  12. 46 CFR 113.05-7 - Environmental tests.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...2010-10-01 false Environmental tests. 113.05-7...CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM...Provisions § 113.05-7 Environmental tests. Communication...monitoring equipment must meet the environmental tests of—...

  13. 7 CFR 1421.113 - Recourse marketing assistance loans.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...2010-01-01 false Recourse marketing assistance loans. 1421.113...AND SIMILARLY HANDLED COMMODITIES-MARKETING ASSISTANCE LOANS AND LOAN DEFICIENCY PAYMENTS FOR 2008 THROUGH 2012 Marketing Assistance Loans § 1421.113...

  14. 7 CFR 1421.113 - Recourse marketing assistance loans.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...2011-01-01 false Recourse marketing assistance loans. 1421.113...AND SIMILARLY HANDLED COMMODITIES-MARKETING ASSISTANCE LOANS AND LOAN DEFICIENCY PAYMENTS FOR 2008 THROUGH 2012 Marketing Assistance Loans § 1421.113...

  15. STS-113 Flight Day 8 Highlights

    NASA Astrophysics Data System (ADS)

    2002-12-01

    The STS-113 eigth flight day begins with Michael Lopez Alegria exiting the Quest Airlock to begin working on the P1 truss structure. Michael Lopez alegria is installing spool positioning devices (SPD) on the P1 truss structure. John Herrington is also seen working outside of the International Space Station. A good view of the deployed UHF radio antenna is shown.

  16. 33 CFR 127.113 - Warning signs.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...33 Navigation and Navigable Waters 2 2011-07-01 2011-07-01...113 Navigation and Navigable Waters COAST GUARD, DEPARTMENT...be seen from the shore and the water; and (3) Have the following... (1) Block style; (2) Black on a white background;...

  17. 33 CFR 127.113 - Warning signs.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01...113 Navigation and Navigable Waters COAST GUARD, DEPARTMENT...be seen from the shore and the water; and (3) Have the following... (1) Block style; (2) Black on a white background;...

  18. 33 CFR 127.113 - Warning signs.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...33 Navigation and Navigable Waters 2 2013-07-01 2013-07-01...113 Navigation and Navigable Waters COAST GUARD, DEPARTMENT...be seen from the shore and the water; and (3) Have the following... (1) Block style; (2) Black on a white background;...

  19. 33 CFR 127.113 - Warning signs.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...33 Navigation and Navigable Waters 2 2014-07-01 2014-07-01...113 Navigation and Navigable Waters COAST GUARD, DEPARTMENT...be seen from the shore and the water; and (3) Have the following... (1) Block style; (2) Black on a white background;...

  20. 7 CFR 900.113 - Submission.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...Disputes Relating to Sales of Milk or Its Products § 900.113...a)(1) Within a reasonable time after the receipt of the...statement as to the period of time during which the award shall...Name of arbitrator; (vi) Time and place of arbitration,...

  1. 7 CFR 900.113 - Submission.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...Disputes Relating to Sales of Milk or Its Products § 900.113...a)(1) Within a reasonable time after the receipt of the...statement as to the period of time during which the award shall...Name of arbitrator; (vi) Time and place of arbitration,...

  2. 9 CFR 113.54 - Sterile diluent.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...records, test reports, and on the final container label. (c) Final container samples from each serial shall be tested for bacteria and fungi in accordance with the test provided in § 113.26. Any serial found to be unsatisfactory shall not be...

  3. Updated 1-13 Jodi Greene

    E-print Network

    on general defense and foreign policy development and is responsible for coordination with the OfficeUpdated 1-13 Jodi Greene Senior Director for Policy Office of the Deputy Under Secretary of the Navy for Plans, Policy, Oversight, and Integration Ms. Jodi Greene is the Senior Director for Policy

  4. Synthesis and characterization of single-crystal indium nitride nanowires

    E-print Network

    Zhou, Chongwu

    Synthesis and characterization of single-crystal indium nitride nanowires Tao Tang, Song Han, Wu semiconducting III-V nitrides have long been viewed as promising materials for electronic and optoelectronic

  5. The natural and industrial cycling of indium in the environment

    E-print Network

    White, Sarah Jane O'Connell

    2012-01-01

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known, however, about the natural or industrial cycling ...

  6. Doping of indium phosphide with group IV elements

    SciTech Connect

    Zakharenkov, L.F.; Samorukov, B.E.; Zykov, A.M.

    1985-06-01

    This paper studies the doping of single crystals of indium phosphide (InP) with group IV elements using data obtained by measuring the total charge concentration of additives and carriers. Single crystals of indium phosphide were grown by the Czochralski method from liquid melts with a liquid hermetic seal in quartz cubicles. The total impurity concentration was determined by atomic-absorption analysis with + or - 10% error. In order to explain the behavior of germanium and tin in indium phosphide, the authors consider the bond energies of additives in indium phosphide and their tetrahedral radii. The authors conclude that the established higher amphoteric character of germanium with respect to tin is probably explained by the moduli of elasticity of the doped crystal.

  7. Indium foil with beryllia washer improves transistor heat dissipation

    NASA Technical Reports Server (NTRS)

    Hilliard, J.; John, J. E. A.

    1964-01-01

    Indium foil, used as an interface material in transistor mountings, greatly reduces the thermal resistance of beryllia washers. This method improves the heat dissipation of power transistors in a vacuum environment.

  8. 9 CFR 113.44 - Swine safety test.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...Products 1 2014-01-01 2014-01-01 false Swine safety test. 113.44 Section 113.44 Animals...REQUIREMENTS Standard Procedures § 113.44 Swine safety test. The swine safety test provided in this section shall...

  9. 9 CFR 113.44 - Swine safety test.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...Products 1 2013-01-01 2013-01-01 false Swine safety test. 113.44 Section 113.44 Animals...REQUIREMENTS Standard Procedures § 113.44 Swine safety test. The swine safety test provided in this section shall...

  10. 19 CFR 113.34 - Co-principals.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ...Duties 1 2011-04-01 2011-04-01 false Co-principals. 113.34 Section 113.34 Customs...CUSTOMS BONDS Principals and Sureties § 113.34 Co-principals. A bond with a co-principal may be used by a person having...

  11. 19 CFR 113.34 - Co-principals.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ...Duties 1 2010-04-01 2010-04-01 false Co-principals. 113.34 Section 113.34 Customs...CUSTOMS BONDS Principals and Sureties § 113.34 Co-principals. A bond with a co-principal may be used by a person having...

  12. 21 CFR 58.113 - Mixtures of articles with carriers.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ...2012-04-01 2012-04-01 false Mixtures of articles with carriers. 58.113 Section 58.113...NONCLINICAL LABORATORY STUDIES Test and Control Articles § 58.113 Mixtures of articles with carriers. (a) For each test or...

  13. 21 CFR 58.113 - Mixtures of articles with carriers.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ...2010-04-01 2010-04-01 false Mixtures of articles with carriers. 58.113 Section 58.113...NONCLINICAL LABORATORY STUDIES Test and Control Articles § 58.113 Mixtures of articles with carriers. (a) For each test or...

  14. 21 CFR 58.113 - Mixtures of articles with carriers.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ...2013-04-01 2013-04-01 false Mixtures of articles with carriers. 58.113 Section 58.113...NONCLINICAL LABORATORY STUDIES Test and Control Articles § 58.113 Mixtures of articles with carriers. (a) For each test or...

  15. 21 CFR 58.113 - Mixtures of articles with carriers.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ...2011-04-01 2011-04-01 false Mixtures of articles with carriers. 58.113 Section 58.113...NONCLINICAL LABORATORY STUDIES Test and Control Articles § 58.113 Mixtures of articles with carriers. (a) For each test or...

  16. 21 CFR 58.113 - Mixtures of articles with carriers.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ...2014-04-01 2014-04-01 false Mixtures of articles with carriers. 58.113 Section 58.113...NONCLINICAL LABORATORY STUDIES Test and Control Articles § 58.113 Mixtures of articles with carriers. (a) For each test or...

  17. 49 CFR 238.113 - Emergency window exits.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...2014-10-01 2014-10-01 false Emergency window exits. 238.113 Section 238.113...Requirements § 238.113 Emergency window exits. (a) Number and location...shall have a minimum of four emergency window exits. At least one emergency...

  18. 49 CFR 238.113 - Emergency window exits.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...2011-10-01 2011-10-01 false Emergency window exits. 238.113 Section 238.113...Requirements § 238.113 Emergency window exits. (a) Number and location...shall have a minimum of four emergency window exits. At least one emergency...

  19. 49 CFR 238.113 - Emergency window exits.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...2012-10-01 2012-10-01 false Emergency window exits. 238.113 Section 238.113...Requirements § 238.113 Emergency window exits. (a) Number and location...shall have a minimum of four emergency window exits. At least one emergency...

  20. 49 CFR 238.113 - Emergency window exits.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...2010-10-01 2010-10-01 false Emergency window exits. 238.113 Section 238.113...Requirements § 238.113 Emergency window exits. (a) Number and location...shall have a minimum of four emergency window exits. At least one emergency...

  1. 49 CFR 238.113 - Emergency window exits.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...2013-10-01 2013-10-01 false Emergency window exits. 238.113 Section 238.113...Requirements § 238.113 Emergency window exits. (a) Number and location...shall have a minimum of four emergency window exits. At least one emergency...

  2. Continuing Architecture Students who take Calculus (113) taking Math

    E-print Network

    Bieber, Michael

    Continuing Architecture Students who take Calculus (113) Currently taking Math 107 or 101 Grade D, F, W Math 107 Currently taking Math 113 Grade D, F, W Repeat Math 113 * Math 115 and 1 hour stats Math 107 Grade Any grade Currently taking Math 098 or 106 Grade D, F, W C or better C or better D, F, W

  3. 49 CFR 230.113 - Wheels and tire defects.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...2011-10-01 2011-10-01 false Wheels and tire defects. 230.113 Section 230.113 Transportation...STANDARDS Steam Locomotives and Tenders Wheels and Tires § 230.113 Wheels and tire defects. Steam locomotive and tender wheels...

  4. Dr. Campbell's Bio113 Exam #1 Fall 2013 Biology 113 Closed Book Take-Home Exam #1 Information Part 1

    E-print Network

    Campbell, A. Malcolm

    Dr. Campbell's Bio113 Exam #1 ­ Fall 2013 1 Biology 113 Closed Book Take-Home Exam #1 ­ Information which nucleotides you would choose as your promoter if you were going to clone it and test it the way

  5. Dr. Campbell's Bio113 Exam #2 Fall 2013 Biology 113 Closed Book Take-Home Exam #2 Chapters 4 -6

    E-print Network

    Campbell, A. Malcolm

    Dr. Campbell's Bio113 Exam #2 ­ Fall 2013 1 Biology 113 Closed Book Take-Home Exam #2 ­ Chapters 4 to the student as KFC. KFC cloned two different promoters and tested their effectiveness relative to a positive

  6. Melting behavior of as-deposited and recrystallized indium nanocrystals

    Microsoft Academic Search

    M. K. Zayed; H. E. Elsayed-Ali

    2005-01-01

    Melting behavior of as-deposited and recrystallized indium nanocrystals is studied using reflection high-energy electron diffraction in its transmission mode. Indium films with mean thickness ranging from 1.5 to 10 monolayers (ML) deposited on highly oriented graphite at different substrate temperatures are studied. Atomic force microscopy is used to study the crystal size and morphology of the as-deposited and recrystallized nanocrystals.

  7. Pyroelectric and dielectric properties of lead indium niobate ceramics

    Microsoft Academic Search

    S. S. Park; W. K. Choo

    1991-01-01

    Perovskite lead indium niobate free of pyrochlore phase has been synthesized by a novel calcination process. The process is described, and the dielectric constant and pyroelectric coefficient of the ceramic body have been determined as a function of temperature. X-ray diffraction investigation shows no obvious indium\\/niobium atom ordering at the B-site on isothermal annealing. This lack of extended ordering is

  8. Preparation and characterisation of tin-doped indium oxide films

    Microsoft Academic Search

    A. Kachouane; M. Addou; A. Bougrine; B. El idrissi; R. Messoussi; M. Regragui; J. C. Bérnede

    2001-01-01

    Tin-doped In2O3 (ITO) thin films were prepared by reactive evaporation from new pulverulent mixture of indium oxide, tin oxide and metallic indium at different partial pressures of oxygen. The films were annealed in a secondary vacuum just after deposition. Under optimal conditions of evaporation, these films are stoichiometric, show a good crystallinity and feature high transmission in visible region (T>90%)

  9. Determination of indium in standard rocks by neutron activation analysis.

    PubMed

    Johansen, O; Steinnes, E

    1966-08-01

    A rapid neutron activation method for the determination of indium in rocks, based on 54 min (116m)In, is described. The method has been applied to a series of geochemical standards including granite G-1 and diabase W-1. The precision is better than +/- 5% for samples containing more than 5 x 10(-10)g indium. Good agreement with previously published values for G-1 and W-1 has been obtained. PMID:18959988

  10. Status of indium phosphide solar cell development at Spire

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.

    1987-01-01

    On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

  11. Indium acetate toxicity in male reproductive system in rats.

    PubMed

    Lee, Kuo-Hsin; Chen, Hsiu-Ling; Leung, Chung-Man; Chen, Hsin-Pao; Hsu, Ping-Chi

    2014-07-01

    Indium, a rare earth metal characterized by high plasticity, corrosion resistance, and a low melting point, is widely used in the electronics industry, but has been reported to be an environmental pollutant and a health hazard. We designed a study to investigate the effects of subacute exposure of indium compounds on male reproductive function. Twelve-week old male Sprague-Dawley rats were randomly divided into test and control groups, and received weekly intraperitoneal injections of indium acetate (1.5 mg/kg body weight) and normal saline, respectively, for 8 weeks. Serum indium levels, cauda epididymal sperm count, motility, morphology, chromatin DNA structure, mitochondrial membrane potential, oxidative stress, and testis DNA content were investigated. The indium acetate-treated group showed significant reproductive toxicity, as well as an increased percentage of sperm morphology abnormality, chromatin integrity damage, and superoxide anion generation. Furthermore, positive correlations among sperm morphology abnormalities, chromatin DNA damage, and superoxide anion generation were also noted. The results of this study demonstrated the toxic effect of subacute low-dose indium exposure during the period of sexual maturation on male reproductive function in adulthood, through an increase in oxidative stress and sperm chromatin DNA damage during spermiogenesis, in a rodent model. © 2014 Wiley Periodicals, Inc. Environ Toxicol, 2014. PMID:25044390

  12. SCHOOL OF MATHEMATICS AND STATISTICS Spring Semester MAS113 Introduction to Probability and Statistics 2 hours

    E-print Network

    MAS113 SCHOOL OF MATHEMATICS AND STATISTICS Spring Semester 2012­2013 MAS113 Introduction from U-Card (9 digits) to be completed by student MAS113 1 Turn Over #12;MAS113 Blank MAS113 2 Continued #12;MAS113 1 Let S be the set of outcomes that could result from rolling a six-sided die: S = {1

  13. Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

    Microsoft Academic Search

    László Korösi; Szilvia Papp; Imre Dékány

    2011-01-01

    Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol–gel technique involving the use of aqueous InCl3, SnCl4 and NH3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability

  14. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect

    Yoshimura, Masatoshi, E-mail: yoshimura@rciqe.hokudai.ac.jp; Nakai, Eiji; Fukui, Takashi [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan)] [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan); Tomioka, Katsuhiro [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan) [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan); PRESTO, Japan Science and Technology Agency (JST), Honcho Kawaguchi, 332–0012 Saitama (Japan)

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436?V, short-circuit current of 24.8?mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5?G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  15. ELLIPSOMETRIC AND ELECTROCHEMICAL STUDIES OF THE STATE OF THE SURFACE OF COBALT, NICKEL AND INDIUM ELECTRODES

    E-print Network

    Paris-Sud XI, Université de

    ELLIPSOMETRIC AND ELECTROCHEMICAL STUDIES OF THE STATE OF THE SURFACE OF COBALT, NICKEL AND INDIUM'ellipsométrie est utilisée pour suivre le comportement anodique du cobalt, du nickel et de l'indium en solution

  16. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  17. Materials flow of indium in the United States in 2008 and 2009

    USGS Publications Warehouse

    Goonan, Thomas G.

    2012-01-01

    Indium is a material that has many applications. It is used by anyone who watches television or views a computer screen. It is found in solar energy arrays and in soldering applications that are required to be lead free. In 2009, about 550 metric tons (t) of indium metal was produced from primary sources world-wide; it was estimated that the United States consumed about 110 t of indium metal (20 percent of world primary production). However, when imports of consumer products that contain indium are considered, the United States consumed about 200 t of indium (36 percent of world primary production). When one considers the recovery from the low-efficiency sputtering process that coats indium-tin oxide onto glass and other surfaces, the recycling rate (within the manufacturing process that uses indium-tin oxide in flat panel displays approaches 36 percent. However, indium recovery from old scrap generated from end-of-life consumer products is not sufficiently economic to add significantly to secondary production. Between 1988 and 2010, indium prices averaged $381 per kilogram (in constant 2000 dollars). However, prices have been quite volatile (deviating from the average of $381 per kilogram by ±$199 per kilogram, a 52 percent difference from the average), reflecting short-term disequilibrium of supply and demand but also responsiveness of supply to demand. The dynamics of zinc smelting govern the primary supply of indium because indium is a byproduct of zinc smelting. Secondary indium supply, which accounts for about one-half of total indium supply, is governed by indium prices and technological advances in recovery. Indium demand is expected to grow because the number and volume of cutting edge technology applications that depend on indium are expected to grow.

  18. Nitrogen-rich indium nitride K. S. A. Butcher,a)

    E-print Network

    Timmers, Heiko

    Nitrogen-rich indium nitride K. S. A. Butcher,a) M. Wintrebert-Fouquet, P. P.-T. Chen, T. L an incident beam of 200 MeV Au ions, has been used to measure indium nitride films grown by radio defect structure. The highest mo- bility indium nitride ever produced had a high room tempera- ture value

  19. Variable-Temperature Electrical Measurements of Zinc Oxide/Tin Oxide-Cosubstituted Indium Oxide

    E-print Network

    Poeppelmeier, Kenneth R.

    Variable-Temperature Electrical Measurements of Zinc Oxide/Tin Oxide-Cosubstituted Indium Oxide A-), undoped In2O3, and indium-tin oxide (ITO) were studied vs cation composition, state of reduction of choice, tin-doped indium oxide (ITO) has a typical conductivity of 1-5 × 103 S/cm and a transpar- ency

  20. In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature on ITO

    E-print Network

    Paris-Sud XI, Université de

    In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature October 2008 DOI: 10.1039/b813046a In situ generation of indium catalyst droplets and subsequent growth with this metal is above 450 C. Indium, the melting point of which is 156.6 C, can noticeably lower the growth

  1. The Race To Replace Tin-Doped Indium Oxide: Which Material Will Win?

    E-print Network

    Zhou, Chongwu

    The Race To Replace Tin-Doped Indium Oxide: Which Material Will Win? Akshay Kumar and Chongwu Zhou affecting the light out-coupling efficiency. Doped metal oxide films such as tin-doped indium oxide (ITO, restricting their use in flexible optoelectronic devices.4 In addition, the limited availability of indium

  2. Surface Science Letters Surface electron accumulation in indium nitride layers grown

    E-print Network

    Dietz, Nikolaus

    Surface Science Letters Surface electron accumulation in indium nitride layers grown by high­H ter- mination with no indium overlayer or droplets and indicate that the layer is N-polar. Broad accumulation. These results indi- cate that surface electron accumulation on InN does not require excess indium

  3. Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition

    E-print Network

    Dietz, Nikolaus

    Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical of the surface was observed, N-polarity indium nitride is indicated. © 2006 American Institute of Physics. DOI: 10.1063/1.2187513 Research on the growth and characterization of indium nitride InN has increased

  4. INDIUM ANTIMONIDE INFRARED IMAGING C.I.D. LINEAR AND MATRIX ARRAYS (*)

    E-print Network

    Boyer, Edmond

    637 INDIUM ANTIMONIDE INFRARED IMAGING C.I.D. LINEAR AND MATRIX ARRAYS (*) J. P. CHATARD, A with transfer read-out, Indium Antimonide has been selected owing to its interesting physical properties [7 to decrease the subsequent fixed pattern noise [10]. 2. Processing techniques. - Single crystals N type Indium

  5. Copyright by Ming Zhang, 2003 THERMAL PROPERTIES OF INDIUM NANOPARTICLES AND GOLD SILICIDE

    E-print Network

    Allen, Leslie H.

    i © Copyright by Ming Zhang, 2003 #12;ii THERMAL PROPERTIES OF INDIUM NANOPARTICLES AND GOLD of Illinois at Urbana-Champaign, 2003 Urbana, Illinois #12;iii THERMAL PROPERTIES OF INDIUM NANOPARTICLES is an experimental work on the thermal properties of indium nanoparticles and the interaction characteristics between

  6. Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells

    E-print Network

    Van Stryland, Eric

    Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in revised form 15 June 2012 Accepted 18 June 2012 Keywords: Ablation Femtosecond laser Indium tin oxide a b s t r a c t Finding ways to scribe indium-tin oxide (ITO) coating plays an important role

  7. Indium phosphide ,,001...-,,21...: Direct evidence for a hydrogen-stabilized surface reconstruction

    E-print Network

    Li, Lian

    Indium phosphide ,,001...-,,2Ã1...: Direct evidence for a hydrogen-stabilized surface 2003 The surface structure of the indium phosphide (001)-(2 1) reconstruction has been clarified. DOI: 10.1103/PhysRevB.68.121303 PACS number s : 68.35.Bs, 31.15.Ar, 78.55.Cr, 78.30. j Indium

  8. INDIUM--2003 36.1 References that include a section mark () are found in the Internet

    E-print Network

    INDIUM--2003 36.1 1 References that include a section mark (§) are found in the Internet References Cited section. INDIUM By Micheal W. George Domestic survey data and table were prepared by Carolyn F, international data coordinator. All refined indium production in the United States during 2003 came from

  9. High-Performance Single-Crystalline Arsenic-Doped Indium Oxide Nanowires

    E-print Network

    Zhou, Chongwu

    High-Performance Single-Crystalline Arsenic-Doped Indium Oxide Nanowires for Transparent Thin 20 V).14 17 For instance, TTFTs with amorphous indium gallium oxide (a- IGO) films display device (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation

  10. Fabrication, structure and mechanical properties of indium nanopillars Gyuhyon Lee a

    E-print Network

    Greer, Julia R.

    Fabrication, structure and mechanical properties of indium nanopillars Gyuhyon Lee a , Ju-Young Kim and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars

  11. Molar volumes of molten indium at high pressures measured in a diamond Guoyin Shen,a)

    E-print Network

    Shen, Guoyin

    Molar volumes of molten indium at high pressures measured in a diamond anvil cell Guoyin Shen for publication 18 June 2002 Molar volumes of molten indium have been measured in an isothermal compression up the molar volume of amorphous materials in a DAC and report the results on molten indium in an isothermal

  12. P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene

    E-print Network

    Cairns, Darran

    P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene Terephthalate The wear mechanisms of the Indium Tin Oxide (ITO) coated Polyethylene Terephthalate (PET) topsheet used for resistive touchscreen applications is Indium Tin Oxide (ITO). The TCO layer must have high

  13. Laser Direct Write Patterned Indium Tin Oxide Films for Photomasks and Anisotropic Resist Applications

    E-print Network

    Chapman, Glenn H.

    Laser Direct Write Patterned Indium Tin Oxide Films for Photomasks and Anisotropic Resist bimetallic Sn/In film into a indium tin oxide layer. Sn over In films (15-120nm thick) with a 1:10 thickness mask, etch resist. 1. Introduction The transparent and conductive films like indium tin oxide (ITO

  14. P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide

    E-print Network

    P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide Sputtering Targets M. Schlott, M from indium-oxide tin-oxide (ITO) targets [1]. Unfor- tunately, black growths, or nodules, commonly isostatic pressing partly reduced powder mixtures of 90 wt.% indium-oxide and 10 wt.% tin-oxide [4

  15. Advanced Surface Modification of Indium Tin Oxide for Improved Charge Injection in Organic Devices

    E-print Network

    Schwartz, Jeffrey

    Advanced Surface Modification of Indium Tin Oxide for Improved Charge Injection in Organic Devices and involves sequential formation of a monolayer of a -conjugated organic semiconductor on the indium tin oxide, indium tin oxide, ITO) and cathode of organic light emitting diodes (OLEDs), or at electrodes in other

  16. Characteristics of Organic Light Emitting Diodes with Tetrakis(Ethylmethylamino) Hafnium Treated Indium Tin Oxide

    E-print Network

    Boo, Jin-Hyo

    Indium Tin Oxide Sunyoung SOHN, Keunhee PARK, Donggeun JUNG, Hyoungsub KIM1Ã , Heeyeop CHAE2 , Hyunmin December 11, 2006; accepted April 9, 2007; published online May 11, 2007) The surface of indium tin oxide consumption.1­7) In fabricating OLED devices, indium tin oxide (ITO) film is widely used as an anode layer

  17. Micro-second infra-red beam bending in photorefractive Iron doped Indium N. Fressengeasa

    E-print Network

    Paris-Sud XI, Université de

    Micro-second infra-red beam bending in photorefractive Iron doped Indium Phosphide N. Fressengeasa of a single beam in photorefractive iron doped indium phosphide is provided down to the microsecond range-conductors such as iron doped Indium Phos- phide [17] where micro-second response times can be ob- tained for intensities

  18. Arsenic adsorption and exchange with phosphorus on indium phosphide ,,001... D. C. Law,1

    E-print Network

    Li, Lian

    Arsenic adsorption and exchange with phosphorus on indium phosphide ,,001... C. H. Li,1 L. Li,2 D adsorption and exchange with phosphorus on indium phosphide 001 have been studied by scan- ning tunneling prepared by growing indium phosphide films, 0.5 m thick, on InP 001 substrates in an MOVPE reactor.12 After

  19. The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films

    E-print Network

    Shahriar, Selim

    MRSEC The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films D Science & Engineering Center For zinc-indium-tin oxide (ZITO) films, grown by pulsed-laser deposition, ZITO-50 and ZITO-70 in which, respectively, 30%, 50% and 70% of the indium in the In2O3 structure

  20. Anion photoelectron spectroscopy of small indium phosphide clusters (ln*P;; x,+-4)

    E-print Network

    Neumark, Daniel M.

    Anion photoelectron spectroscopy of small indium phosphide clusters (ln*P;; x,+-4) Cangshan Xu Laboratory, Berkeley, California 94720 (Received 20 May 1994; accepted 13 July 1994) Small indium phosphide a matrix.7 In this Communi- cation, we report the photoelectron spectra of a series of size-selected indium

  1. Photoluminescence from localized states in disordered indium nitride Bhavtosh Bansal,1,2,a

    E-print Network

    Moshchalkov, Victor V.

    Photoluminescence from localized states in disordered indium nitride Bhavtosh Bansal,1,2,a Abdul that the value of energy gap of bulk indium nitride is about 0.7 eV.1,2 While it is now generally agreed probably due to indium oxide contamination.9 A characteristic that distinguishes a band-edge state from

  2. PROPRITS OPTIQUES DES COUCHES MINCES D'INDIUM Par M. VAN DE VOORDE et A. JONES,

    E-print Network

    Boyer, Edmond

    543. PROPRIÉTÉS OPTIQUES DES COUCHES MINCES D'INDIUM Par M. VAN DE VOORDE et A. JONES, Centre de Physique Nucléaire, Université de Louvain. Résumé. 2014 Les propriétés optiques des couches minces d'indium. 2014 The optical properties of thin layers of indium have been studied by Burtin [1], Motulevich

  3. The electron stimulated oxidation of indium in a vacuum

    NASA Astrophysics Data System (ADS)

    Ashkhotov, O. G.; Krymshokalova, D. A.; Ashkhotova, I. B.

    2010-12-01

    Auger electron spectroscopy was used to study electron stimulated adsorption from residual ultra-high vacuum medium on the atomically pure surface of indium. In the absence of irradiation of the surface of indium by a beam of electrons, adsorption processes were much weaker or almost absent. Electron stimulation considerably increased the rate of adsorption. Irradiation by electrons caused the dissociation of the adsorbate; as a result, a layer of carbon formed on the surface of indium. The conclusion is drawn that, in modeling electron stimulated adsorption, not only electronic excitation and/or dissociation of molecules in the gas phase, but also the excitation of surface particles or adsorbent defects should be taken into account.

  4. Recalibration of indium foil for personnel screening in criticality accidents.

    PubMed

    Takada, C; Tsujimura, N; Mikami, S

    2011-03-01

    At the Nuclear Fuel Cycle Engineering Laboratories of the Japan Atomic Energy Agency (JAEA), small pieces of indium foil incorporated into personal dosemeters have been used for personnel screening in criticality accidents. Irradiation tests of the badges were performed using the SILENE reactor to verify the calibration of the indium activation that had been made in the 1980s and to recalibrate them for simulated criticalities that would be the most likely to occur in the solution process line. In addition, Monte Carlo calculations of the indium activation using the badge model were also made to complement the spectral dependence. The results lead to a screening level of 15 kcpm being determined that corresponds to a total dose of 0.25 Gy, which is also applicable in posterior-anterior exposure. The recalibration based on the latest study will provide a sounder basis for the screening procedure in the event of a criticality accident. PMID:21062798

  5. Diffusion parameters of indium for silicon process modeling

    NASA Astrophysics Data System (ADS)

    Kizilyalli, I. C.; Rich, T. L.; Stevie, F. A.; Rafferty, C. S.

    1996-11-01

    The diffusion parameters of indium in silicon are investigated. Systematic diffusion experiments in dry oxidizing ambients at temperatures ranging from 800 to 1050 °C are conducted using silicon wafers implanted with indium. Secondary-ion-mass spectrometry (SIMS) is used to analyze the dopant distribution before and after heat treatment. The oxidation-enhanced diffusion parameter [R. B. Fair, in Semiconductor Materials and Process Technology Handbook, edited by G. E. McGuire (Noyes, Park Ridge, NJ, 1988); A. M. R. Lin, D. A. Antoniadis, and R. W. Dutton, J. Electrochem. Soc. Solid-State Sci. Technol. 128, 1131 (1981); D. A. Antoniadis and I. Moskowitz, J. Appl. Phys. 53, 9214 (1982)] and the segregation coefficient at the Si/SiO2 interface [R. B. Fair and J. C. C. Tsai, J. Electrochem. Soc. Solid-State Sci. Technol. 125, 2050 (1978)] (ratio of indium concentration in silicon to that in silicon dioxide) are extracted as a function of temperature using SIMS depth profiles and the silicon process simulator PROPHET [M. Pinto, D. M. Boulin, C. S. Rafferty, R. K. Smith, W. M. Coughran, I. C. Kizilyalli, and M. J. Thoma, in IEDM Technical Digest, 1992, p. 923]. It is observed that the segregation coefficient of indium at the Si/SiO2 interface is mIn?1, similar to boron; however, unlike boron, the segregation coefficient of indium at the Si/SiO2 interface decreases with increasing temperature. Extraction results are summarized in analytical forms suitable for incorporation into other silicon process simulators. Finally, the validity of the extracted parameters is verified by comparing the simulated and measured SIMS profiles for an indium implanted buried-channel p-channel metal-oxide-semiconductor field-effect-transistor [I. C. Kizilyalli, F. A. Stevie, and J. D. Bude, IEEE Electron Device Lett. (1996)] process that involves a gate oxidation and various other thermal processes.

  6. Indium-111-Photofrin-II scintillation scan

    SciTech Connect

    Origitano, T.C.; Karesh, S.M.; Reichman, O.H.; Henkin, R.E.; Caron, M.J.

    1989-04-01

    Photodynamic therapy is under intense investigation as an adjuvant treatment for malignant glial tumors of the central nervous system. Photofrin-II (HpD-II) is currently the most actively investigated photosensitizing agent. A crucial issue regarding the safe and efficacious usage of HpD-II-based photodynamic therapy is the individual in vivo kinetics of tumor uptake and retention, compared with normal brain clearance. The optimal time for photoactivation of sensitized tumor must be known to ensure a high target-to-nontarget ratio, resulting in the maximal tumor destruction while preserving normal brain. Our laboratory developed a radionuclide scan based on 111indium (111In)-labeled HpD-II to evaluate HpD-II localization and clearance noninvasively within a canine model of intracerebral gliosarcoma. Synthesis of the 111In-HpD-II complex in greater than 90% yield is achieved by a simple, rapid labeling method. Radiochemical purity and stability were verified by high-performance liquid chromatography. Using the canine model of intracerebral gliosarcoma, we followed the uptake of 111In-HpD-II in tumors with serial scintillation scanning. Localization of the tumor by 111In-HpD-II has been verified by contrast-enhanced computed tomographic scan followed by gross and histological examination of the enhancing brain region. Total body biodistribution of 111In-HpD-II at various times after injection has been evaluated. The ratio of uptake in tumor compared with surrounding brain peaked at 72 hours after injection. The knowledge of regional distribution and concentration of a photosensitizing agent within a tumor mass and surrounding brain allows for the most efficacious timing and localization of a photoactivating source.

  7. Deformed intruder band in [sup 113]I

    SciTech Connect

    Paul, E.S.; Beausang, C.W.; Forbes, S.A.; Gale, S.J.; James, A.N.; Jones, P.M.; Joyce, M.J. (Oliver Lodge Laboratory, University of Liverpool, P.O. Box 147, Liverpool L693BX (United Kingdom)); Clark, R.M.; Hauschild, K.; Hibbert, I.M.; Wadsworth, R. (Department of Physics, University of York, Heslington, York Y015DD (United Kingdom)); Cunningham, R.A.; Simpson, J. (SERC Daresbury Laboratory, Daresbury, Warrington WA44AD (United Kingdom)); Davinson, T.; Page, R.D.; Sellin, P.J.; Woods, P.J. (Department of Physics, University of Edinburgh, Edinburgh EH93JZ (United Kingdom)); Fossan, D.B.; LaFosse, D.R.; Schnare, H.; Waring, M.P. (Department of Physics, State University of New York at Stony Brook, New York 11794 (United States)); Gizon, A.; Gizon, J. (Institut des Sciences Nucleaires, Institute National de Physique Nucleaire et de Physique des Particules-Centre National de le Recherche Scientifique, Universite Joseph Fourier, Grenoble (France))

    1993-08-01

    High-spin states in the neutron-deficient [sup 113]I nucleus have been investigated for the first time using the [sup 58]Ni([sup 58]Ni,3[ital p][gamma]) reaction. Gamma-ray coincidence data were acquired with the Eurogam spectrometer in conjunction with the Daresbury recoil mass separator. A deformed intruder band has been established extending to a spin approaching 40[h bar] and excitation energy 30 MeV. A possible structure for the band is discussed. This is the first evidence for such a band in this mass region with [ital Z][gt]51.

  8. STS-113 Endeavour flow line welding

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- James Stickley and Kristin Rumpf, both with United Space Alliance - Main Propulsion System Engineering, discuss procedures about welding the minute cracks on Endeavour's flow liners. Endeavour is scheduled to fly on mission STS-113 in November. The mission payload is the P1 Integrated Truss Structure, the first portside truss to go to the International Space Station, and will be attached to the central truss segment, S0, on the Station. Also additional cooling radiators will be delivered but will remain stowed until flight 12A.1.

  9. STS-113 Endeavour flow line welding

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. - Welder Jerry Goudy (left), with United Space Alliance, and his backup Jack Weeks, with Marshall Space Flight Center - Boeing, are ready to begin welding the minute cracks on Endeavour's flow liners. Endeavour is scheduled to fly on mission STS-113 in November. The mission payload is the P1 Integrated Truss Structure, the first portside truss to go to the International Space Station, and will be attached to the central truss segment, S0, on the Station. Also additional cooling radiators will be delivered but will remain stowed until flight 12A.1.

  10. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- Brilliant clouds of smoke and steam roll away from Launch Pad 39A as Space Shuttle Endeavour blazes into the black sky. Liftoff occurred ontime at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey. [Photo by Scott Andrews

  11. STS-113 Endeavour flow line welding

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- Kristin Rumpf, with United Space Alliance - Main Propulsion System Engineering, looks over part of Endeavour before welding of the flow liner begins. Endeavour is scheduled to fly on mission STS-113 in November. The mission payload is the P1 Integrated Truss Structure, the first portside truss to go to the International Space Station, and will be attached to the central truss segment, S0, on the Station. Also additional cooling radiators will be delivered but will remain stowed until flight 12A.1.

  12. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. -- Against a black moonless sky, Space Shuttle Endeavour blazes into space after an ontime liftoff at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey. [Photo by Ray Yost

  13. STS-113 Space Shuttle Endeavour launch

    NASA Technical Reports Server (NTRS)

    2002-01-01

    KENNEDY SPACE CENTER, FLA. - Against a black moonless sky, Space Shuttle Endeavour lights up the night as it blazes into space after an ontime liftoff at 7:49:47 p.m. EST. The launch is the 19th for Endeavour, and the 112th flight in the Shuttle program. Mission STS-113 is the 16th assembly flight to the International Space Station, carrying another structure for the Station, the P1 integrated truss. Also onboard are the Expedition 6 crew, who will replace Expedition 5. Endeavour is scheduled to land at KSC after an 11-day journey. [Photo by Scott Andrews

  14. Transition Properties of Low Lying States in Atomic Indium

    E-print Network

    Sahoo, B K

    2011-01-01

    We present here the results of our relativistic many-body calculations of various properties of the first six low-lying excited states of indium. The calculations were performed using the relativistic coupled-cluster method in the framework of the singles, doubles and partial triples approximation. We obtain a large lifetime ~10s for the [4p^6]5s^2 5p_{3/2} state, which had not been known earlier. Our precise results could be used to shed light on the reliability of the lifetime measurements of the excited states of atomic indium that we have considered in the present work.

  15. Pulmonary Alveolar Proteinosis in Workers at an Indium Processing Facility

    PubMed Central

    Cummings, Kristin J.; Donat, Walter E.; Ettensohn, David B.; Roggli, Victor L.; Ingram, Peter; Kreiss, Kathleen

    2010-01-01

    Two cases of pulmonary alveolar proteinosis, including one death, occurred in workers at a facility producing indium-tin oxide (ITO), a compound used in recent years to make flat panel displays. Both workers were exposed to airborne ITO dust and had indium in lung tissue specimens. One worker was tested for autoantibodies to granulocytemacrophage–colonystimulating factor (GM-CSF) and found to have an elevated level. These cases suggest that inhalational exposure to ITO causes pulmonary alveolar proteinosis, which may occur via an autoimmune mechanism. PMID:20019344

  16. Discovery of the calcium, indium, tin, and platinum isotopes

    SciTech Connect

    Amos, S.; Gross, J.L.; Thoennessen, M., E-mail: thoennessen@nscl.msu.edu

    2011-07-15

    Currently, twenty-four calcium, thirty-eight indium, thirty-eight tin, and thirty-nine platinum isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. - Highlights: Documentation of the discovery of all calcium, indium, tin and platinum isotopes. {yields} Summary of author, journal, year, place and country of discovery for each isotope. {yields} Brief description of discovery history of each isotope.

  17. 13 CFR 113.130 - Effect of employment opportunities.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    13 Business Credit and Assistance...false Effect of employment opportunities...Section 113.130 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION...130 Effect of employment...

  18. 13 CFR 113.130 - Effect of employment opportunities.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    13 Business Credit and Assistance...false Effect of employment opportunities...Section 113.130 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION...130 Effect of employment...

  19. 13 CFR 113.130 - Effect of employment opportunities.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    13 Business Credit and Assistance...false Effect of employment opportunities...Section 113.130 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION...130 Effect of employment...

  20. 13 CFR 113.130 - Effect of employment opportunities.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    13 Business Credit and Assistance...false Effect of employment opportunities...Section 113.130 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NONDISCRIMINATION...130 Effect of employment...

  1. 49 CFR 227.113 - Noise operational controls.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION OCCUPATIONAL NOISE EXPOSURE Occupational Noise Exposure for Railroad Operating Employees. § 227.113 Noise operational controls. (a)...

  2. 9 CFR 113.50 - Ingredients of biological products.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Ingredient Requirements § 113.50 Ingredients of biological products. All...

  3. 9 CFR 113.452 - Erysipelothrix Rhusiopathiae Antibody.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Antibody Products § 113.452 Erysipelothrix Rhusiopathiae Antibody. Erysipelothrix...

  4. 9 CFR 113.42 - Detection of lymphocytic choriomeningitis contamination.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Standard Procedures § 113.42 Detection of lymphocytic choriomeningitis...

  5. 9 CFR 113.105 - Leptospira Hardjo Bacterin.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Inactivated Bacterial Products § 113.105 Leptospira Hardjo Bacterin. Leptospira...

  6. 9 CFR 113.50 - Ingredients of biological products.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Ingredient Requirements § 113.50 Ingredients of biological products. All...

  7. 9 CFR 113.452 - Erysipelothrix Rhusiopathiae Antibody.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Antibody Products § 113.452 Erysipelothrix Rhusiopathiae Antibody. Erysipelothrix...

  8. 9 CFR 113.452 - Erysipelothrix Rhusiopathiae Antibody.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE VIRUSES, SERUMS, TOXINS, AND ANALOGOUS PRODUCTS; ORGANISMS AND VECTORS STANDARD REQUIREMENTS Antibody Products § 113.452 Erysipelothrix Rhusiopathiae Antibody. Erysipelothrix...

  9. 49 CFR 227.113 - Noise operational controls.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION OCCUPATIONAL NOISE EXPOSURE Occupational Noise Exposure for Railroad Operating Employees. § 227.113 Noise operational controls....

  10. 49 CFR 227.113 - Noise operational controls.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION OCCUPATIONAL NOISE EXPOSURE Occupational Noise Exposure for Railroad Operating Employees. § 227.113 Noise operational controls....

  11. 49 CFR 227.113 - Noise operational controls.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION OCCUPATIONAL NOISE EXPOSURE Occupational Noise Exposure for Railroad Operating Employees. § 227.113 Noise operational controls....

  12. 49 CFR 227.113 - Noise operational controls.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION OCCUPATIONAL NOISE EXPOSURE Occupational Noise Exposure for Railroad Operating Employees. § 227.113 Noise operational controls....

  13. Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption

    SciTech Connect

    Choi, Soojeong [Department of Physics, Duke University, Durham, North Carolina 27708 (United States); Kim, Tong-Ho; Wolter, Scott; Brown, April [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Everitt, Henry O. [Department of Physics, Duke University, Durham, North Carolina 27708 (United States); Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Losurdo, Maria; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas-CNR, via Orabona, 4-70126 Bari (Italy)

    2008-03-15

    Indium kinetics and evidence for indium segregation on the GaN (0001) surface are investigated via in situ spectroscopic ellipsometry. Indium deposition exhibits two stable states at coverages of 1.0 and 1.7 ML within the temperature range of 630-688 deg. C. Formation of each layer is governed by two kinetic processes: nuclei formation and nuclei-mediated layer adsorption. The measured desorption activation energies of nuclei of the first (2.04 eV) and second (2.33 eV) monolayers are lower than the desorption activation energies of the aggregated first (2.64 eV) and second (2.53 eV) monolayers, respectively. This suggests that adatoms preferentially interact with the nuclei and laterally aggregate.

  14. Indium segregation measured in InGaN quantum well layer

    PubMed Central

    Deng, Zhen; Jiang, Yang; Wang, Wenxin; Cheng, Liwen; Li, Wei; Lu, Wei; Jia, Haiqiang; Liu, Wuming; Zhou, Junming; Chen, Hong

    2014-01-01

    The indium segregation in InGaN well layer is confirmed by a nondestructive combined method of experiment and numerical simulation, which is beyond the traditional method. The pre-deposited indium atoms before InGaN well layer growth are first carried out to prevent indium atoms exchange between the subsurface layer and the surface layer, which results from the indium segregation. The uniform spatial distribution of indium content is achieved in each InGaN well layer, as long as indium pre-deposition is sufficient. According to the consistency of the experiment and numerical simulation, the indium content increases from 16% along the growth direction and saturates at 19% in the upper interface, which cannot be determined precisely by the traditional method. PMID:25339386

  15. Chemical interactions at polymer interfaces: poly( p-xylylene-?-tetrahydrothiophene-bromide, chloride) on indium–tin-oxide

    Microsoft Academic Search

    A Andersson; Th Kugler; M Lögdlund; A. B Holmes; X Li; W. R Salaneck

    1999-01-01

    Chemical interactions, at the interface between a precursor polymer for poly(p-phenylenevinylene), namely poly(p-xylylene-?-tetrahydrothiophene-chloride), and an indium–tin-oxide transparent electrode, are identified using X-ray photoelectron spectroscopy. The HCl eliminated in the conversion process interacts with the surface of the indium–tin-oxide substrate leading to the formation of indium chloride which then diffuses into the polymer. It appears that indium–tin-oxide, or possibly the indium

  16. Cross-current leaching of indium from end-of-life LCD panels.

    PubMed

    Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

    2015-08-01

    Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2M sulfuric acid at 80°C for 10min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85-90%, and with 6 steps it was about 50-55%. Indium concentration in the leachate was about 35mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO2 (with 10 steps we assessed that the emission of about 90kg CO2-Eq. could be avoided) thanks to the recovery of indium. This new strategy represents a useful approach for secondary production of indium from waste LCD panels. PMID:25997989

  17. Use of and Occupational Exposure to Indium in the United States

    PubMed Central

    Hines, Cynthia J.; Roberts, Jennifer L.; Andrews, Ronnee N.; Jackson, Matthew V.; Deddens, James A.

    2015-01-01

    Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009–2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m3 for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH REL. Given recent findings of adverse health effects in workers, research is needed to determine if the current REL sufficiently protects workers against indium-related diseases. PMID:24195539

  18. Visible light electroluminescent diodes of indium-gallium phosphide

    NASA Technical Reports Server (NTRS)

    Clough, R.; Richman, D.; Tietjen, J.

    1970-01-01

    Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

  19. RECOVERY OF INDIUM FROM AQUEOUS SOLUTIONS BY SOLVENT EXTRACTION

    Microsoft Academic Search

    A. P. Paiva

    2001-01-01

    This review identifies the most significant knowledge acquired on the recovery of indium from aqueous solutions using solvent extraction. Research on the efficient and selective recovery of this valuable element from aqueous solutions is particularly emphasized, as this information is useful for potential hydrometallurgical applications. A good comprehension of the extraction reactions involved can be important for further development; therefore,

  20. Defect levels in indium and gallium doped zinc selenide

    NASA Astrophysics Data System (ADS)

    Qidwai, A. A.; Woods, J.

    1982-09-01

    Indium and gallium dopants in ZnSe display unusual properties in that although they act as shallow donors in low concentration, complex compensation effects appear to occur at high concentration, so that the resistivity increases with increasing impurity content. In order to investigate these effects, the techniques of transient photocapacitance and transient photocurrent have been used to study the incidence of deep levels in Schottky diodes formed on ZnSe: In and ZnSe: Ga. Shallow levels have also been investigated using the photocapacitance method advocated by Marfaing. In indium doped crystals, acceptor levels were found at 0.59 and 0.41 eV above the valence band. The acceptor at 0.59 eV is identified as the zinc vacancy-substitutional indium complex part of the self-activated luminescence centre. The 0.41 eV acceptor became more apparent as the indium content was increased and presumably contributes to the observed donor compensation effects. For comparison diodes fabricated on copper doped ZnSe were examined and found to exhibit an acceptor level at 0.67 eV.

  1. Defect levels in indium and gallium doped zinc selenide

    Microsoft Academic Search

    A. A. Qidwai; J. Woods

    1982-01-01

    Indium and gallium dopants in ZnSe display unusual properties in that although they act as shallow donors in low concentration, complex compensation effects appear to occur at high concentration, so that the resistivity increases with increasing impurity content. In order to investigate these effects, the techniques of transient photocapacitance and transient photocurrent have been used to study the incidence of

  2. Detection of accessory spleens with indium 111-labeled autologous platelets

    Microsoft Academic Search

    Harmon H. Davis; Ajit Varki; W. A. Heaton; B. A. Siegel

    1980-01-01

    In two patients with recurrent immune thrombocytopenia, accessory splenic tissue was demonstrated by radionuclide imaging following administration of indium 111-labeled autologous platelets. In one of these patients, no accessory splenic tissue was seen on images obtained with technetium 99m sulfur colloid. This new technique provides a simple means for demonstrating accessory spleens and simultaneously evaluating the life-span of autologous platelets.

  3. Sub-micronewton thrust measurements of indium field emission thrusters

    NASA Technical Reports Server (NTRS)

    Ziemer, J. K.

    2003-01-01

    The performance of three indium field emission thrusters (In-FETs) developed by the Austrian Research Center Seibersdorf (ARCS) have been measured up to 200 muN, 2 mA, and 20 W using a submicronewton resolution thrust stand.

  4. Indium-111 labeled anti-melanoma monoclonal antibodies

    DOEpatents

    Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

    1984-04-30

    A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

  5. Indium phosphide solar cells for laser power beaming applications

    Microsoft Academic Search

    Raj K. Jain; Geoffrey A. Landis

    1992-01-01

    Lasers can be used to transmit power to photovoltaic cells. Solar cell efficiencies are enhanced significantly under monochromatic light, and therefore a laser beam of proper wavelength could be a very effective source of illumination for a solar array operating at very high efficiencies. This work reviews the modeling studies made on indium phosphide solar cells for such an application.

  6. Technique for depositing silicon dioxide on indium arsenide improves adhesion

    NASA Technical Reports Server (NTRS)

    1970-01-01

    Planar array processing of indium arsenide wafers includes dicing into a prescribed geometry, then cleaning and drying, and finally pre-oxidizing in an oxygen atmosphere at 500 degrees C. The last step forms an oxide interface between the InAs surface and a glow discharge deposited layer of silicon dioxide.

  7. Growth and the Phase Transition of Indium Sulfide Ultrafine Particle

    NASA Astrophysics Data System (ADS)

    Ueda, Masahiro; Suzuki, Hitoshi; Kido, Osamu; Shintaku, Masayuki; Kurumada, Mami; Sato, Takeshi; Saito, Yoshio; Kaito, Chihiro

    2005-05-01

    Indium sulfide particles produced in smoke have been analyzed by transmission electron microscopy. Three phases, ?, ? and ?' with the different external shapes were produced. A mixture phase of ? and ?' was found and the lattice relation was elucidated. The phase transition temperatures were assigned to be 400°C (? to ?) and 500°C (?' to ?).

  8. GALLIUM ARSENIDE, INDIUM PHOSPHIDE. CHEMICAL VAPOR DEPOSITION AND PHOTOLUMINESCENCE PROPERTIES

    E-print Network

    Boyer, Edmond

    783 GALLIUM ARSENIDE, INDIUM PHOSPHIDE. CHEMICAL VAPOR DEPOSITION AND PHOTOLUMINESCENCE PROPERTIES production and its good control of growth and impurity incorporation, vapor phase epitaxy seems to be more the near band gap photoluminescence (PL) of vapor grown layers needs to be improved. Since the luminescence

  9. TEMPERATURE DEPENDENCE OF MICROWAVE EMISSION FROM INDIUM ANTIMONIDE

    Microsoft Academic Search

    T. O. Poehler

    1967-01-01

    The microwave emission characteristics of n-type indium antimonide have been studied as a function of temperature and magnetic field intensity. Microwave emission at 10 GHz has been detected at temperatures as high as 250°K in a magnetic field of 6.5 kOe.

  10. The thermal conductivities of liquid lead and indium

    Microsoft Academic Search

    M. J. Duggin

    1972-01-01

    Thermal conductivity measurements have been made on lead over the range 620-880K and on indium over the range 520-845K using a new apparatus of the axial flow type. In each case, the Lorentz number for the liquid metal falls steadily with increasing temperature.

  11. 111Indium autologous leucocytes in inflammatory bowel disease

    Microsoft Academic Search

    S H Saverymuttu; A M Peters; J P Lavender; H J Hodgson; V S Chadwick

    1983-01-01

    A non-invasive method of imaging and assessing inflammatory bowel disease is described. 111Indium labelled leucocyte scans were performed on 33 patients with a wide variety of inflammatory bowel diseases and 25 control patients. All patients with moderate or severe inflammatory bowel disease had positive scans with localisation of abnormal activity corresponding to the sites assessed to be diseased by radiology

  12. 49 CFR 215.113 - Defective plain bearing wedge.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...2014-10-01 false Defective plain bearing wedge. 215.113 Section 215...System § 215.113 Defective plain bearing wedge. A railroad may not place...continue in service a car, if a plain bearing wedge on that car is— (a)...

  13. 49 CFR 215.113 - Defective plain bearing wedge.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...2012-10-01 false Defective plain bearing wedge. 215.113 Section 215...System § 215.113 Defective plain bearing wedge. A railroad may not place...continue in service a car, if a plain bearing wedge on that car is— (a)...

  14. 49 CFR 215.113 - Defective plain bearing wedge.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...2013-10-01 false Defective plain bearing wedge. 215.113 Section 215...System § 215.113 Defective plain bearing wedge. A railroad may not place...continue in service a car, if a plain bearing wedge on that car is— (a)...

  15. 49 CFR 215.113 - Defective plain bearing wedge.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...2010-10-01 false Defective plain bearing wedge. 215.113 Section 215...System § 215.113 Defective plain bearing wedge. A railroad may not place...continue in service a car, if a plain bearing wedge on that car is— (a)...

  16. 49 CFR 215.113 - Defective plain bearing wedge.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...2011-10-01 false Defective plain bearing wedge. 215.113 Section 215...System § 215.113 Defective plain bearing wedge. A railroad may not place...continue in service a car, if a plain bearing wedge on that car is— (a)...

  17. Molecular & Biochemical Parasitology 113 (2001) 337340 Short communication

    E-print Network

    Beverley, Stephen M.

    2001-01-01

    Molecular & Biochemical Parasitology 113 (2001) 337­340 Short communication A survey); Expression profiling; Gene discovery; Transcriptional regulation; Chromatin www.parasitology-6851(01)00227-4 #12;N.S. Akopyants et al. / Molecular & Biochemical Parasitology 113 (2001) 337­340338 (intergenic

  18. 9 CFR 202.113 - Rule 13: Written hearing.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    9 Animals and Animal Products 2 2014-01-01 2014-01-01... 202.113 Section 202.113 Animals and Animal Products GRAIN INSPECTION, PACKERS...shall constitute a waiver of the right to file such evidence. (g)...

  19. 9 CFR 202.113 - Rule 13: Written hearing.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    9 Animals and Animal Products 2 2012-01-01 2012-01-01... 202.113 Section 202.113 Animals and Animal Products GRAIN INSPECTION, PACKERS...shall constitute a waiver of the right to file such evidence. (g)...

  20. 9 CFR 202.113 - Rule 13: Written hearing.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    9 Animals and Animal Products 2 2011-01-01 2011-01-01... 202.113 Section 202.113 Animals and Animal Products GRAIN INSPECTION, PACKERS...shall constitute a waiver of the right to file such evidence. (g)...

  1. 9 CFR 202.113 - Rule 13: Written hearing.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    9 Animals and Animal Products 2 2013-01-01 2013-01-01... 202.113 Section 202.113 Animals and Animal Products GRAIN INSPECTION, PACKERS...shall constitute a waiver of the right to file such evidence. (g)...

  2. 9 CFR 113.331 - Bursal Disease Vaccine.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...Master Seed Virus shall be tested for pathogens by the chicken embryo inoculation test prescribed in § 113.37, except that...from each serial shall be tested for pathogens by the chicken embryo inoculation test prescribed in § 113.37, except that,...

  3. 9 CFR 113.331 - Bursal Disease Vaccine.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...Master Seed Virus shall be tested for pathogens by the chicken embryo inoculation test prescribed in § 113.37, except that...from each serial shall be tested for pathogens by the chicken embryo inoculation test prescribed in § 113.37, except that,...

  4. 9 CFR 113.331 - Bursal Disease Vaccine.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ...Master Seed Virus shall be tested for pathogens by the chicken embryo inoculation test prescribed in § 113.37, except that...from each serial shall be tested for pathogens by the chicken embryo inoculation test prescribed in § 113.37, except that,...

  5. 9 CFR 113.212 - Bursal Disease Vaccine, Killed Virus.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...applicable requirements prescribed in § 113.200. (b) Each lot of Master Seed shall be tested for pathogens by the chicken embryo inoculation test prescribed in § 113.37, except that, if the test is inconclusive because of a vaccine virus...

  6. 9 CFR 113.212 - Bursal Disease Vaccine, Killed Virus.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ...applicable requirements prescribed in § 113.200. (b) Each lot of Master Seed shall be tested for pathogens by the chicken embryo inoculation test prescribed in § 113.37, except that, if the test is inconclusive because of a vaccine virus...

  7. 23 CFR 635.113 - Bid opening and bid tabulations.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ...2010-04-01 2010-04-01 false Bid opening and bid tabulations. 635.113 Section...Contract Procedures § 635.113 Bid opening and bid tabulations. (a...contractors, during the period following the opening of bids and before the award of the...

  8. 9 CFR 113.32 - Detection of Brucella contamination.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ...contamination. 113.32 Section 113.32 Animals and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT...One ml of the minced tissue used as the source of cells or 1 ml of the extract of the tissue prior...

  9. 9 CFR 113.32 - Detection of Brucella contamination.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ...contamination. 113.32 Section 113.32 Animals and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT...One ml of the minced tissue used as the source of cells or 1 ml of the extract of the tissue prior...

  10. 46 CFR 113.27-1 - Engineers' assistance-needed alarm.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...113.27-1 Section 113.27-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT Engineers' Assistance-Needed Alarm § 113.27-1...

  11. 50 CFR 86.113 - What if I have recently completed a boat access survey?

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...have recently completed a boat access survey? 86.113 Section 86.113 Wildlife...How States Will Complete Access Needs Surveys § 86.113 What if I have recently completed a boat access survey? If the recent survey...

  12. 46 CFR 67.113 - Managing owner designation; address; requirement to report change of address.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...2010-10-01 false Managing owner designation; address; requirement to report change of address. 67.113 Section 67.113 Shipping... § 67.113 Managing owner designation; address; requirement to report change of...

  13. 46 CFR 67.113 - Managing owner designation; address; requirement to report change of address.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...2011-10-01 false Managing owner designation; address; requirement to report change of address. 67.113 Section 67.113 Shipping... § 67.113 Managing owner designation; address; requirement to report change of...

  14. 46 CFR 67.113 - Managing owner designation; address; requirement to report change of address.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...2012-10-01 false Managing owner designation; address; requirement to report change of address. 67.113 Section 67.113 Shipping... § 67.113 Managing owner designation; address; requirement to report change of...

  15. 46 CFR 67.113 - Managing owner designation; address; requirement to report change of address.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...2014-10-01 false Managing owner designation; address; requirement to report change of address. 67.113 Section 67.113 Shipping... § 67.113 Managing owner designation; address; requirement to report change of...

  16. 46 CFR 67.113 - Managing owner designation; address; requirement to report change of address.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...2013-10-01 false Managing owner designation; address; requirement to report change of address. 67.113 Section 67.113 Shipping... § 67.113 Managing owner designation; address; requirement to report change of...

  17. 13 CFR 113.425 - Counseling and use of appraisal and counseling materials.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 2010-01-01 2010-01-01 false Counseling and use of appraisal and counseling materials. 113.425 Section 113.425...Programs Or Activities Prohibited § 113.425 Counseling and use of appraisal and counseling...

  18. 13 CFR 113.425 - Counseling and use of appraisal and counseling materials.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 2013-01-01 2013-01-01 false Counseling and use of appraisal and counseling materials. 113.425 Section 113.425...Programs Or Activities Prohibited § 113.425 Counseling and use of appraisal and counseling...

  19. 13 CFR 113.425 - Counseling and use of appraisal and counseling materials.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 2014-01-01 2014-01-01 false Counseling and use of appraisal and counseling materials. 113.425 Section 113.425...Programs Or Activities Prohibited § 113.425 Counseling and use of appraisal and counseling...

  20. 13 CFR 113.425 - Counseling and use of appraisal and counseling materials.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 2011-01-01 2011-01-01 false Counseling and use of appraisal and counseling materials. 113.425 Section 113.425...Programs Or Activities Prohibited § 113.425 Counseling and use of appraisal and counseling...

  1. 13 CFR 113.425 - Counseling and use of appraisal and counseling materials.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 2012-01-01 2012-01-01 false Counseling and use of appraisal and counseling materials. 113.425 Section 113.425...Programs Or Activities Prohibited § 113.425 Counseling and use of appraisal and counseling...

  2. 19 CFR 113.41 - Entry made prior to production of documents.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ...false Entry made prior to production of documents. 113.41 Section 113.41 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.41 Entry made prior to production of documents. When entry is made prior to the...

  3. 19 CFR 113.42 - Time period for production of documents.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... false Time period for production of documents. 113.42 Section 113.42 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.42 Time period for production of documents. Except when another period is...

  4. 19 CFR 113.41 - Entry made prior to production of documents.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ...false Entry made prior to production of documents. 113.41 Section 113.41 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.41 Entry made prior to production of documents. When entry is made prior to the...

  5. 19 CFR 113.42 - Time period for production of documents.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... false Time period for production of documents. 113.42 Section 113.42 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.42 Time period for production of documents. Except when another period is...

  6. 19 CFR 113.41 - Entry made prior to production of documents.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ...false Entry made prior to production of documents. 113.41 Section 113.41 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.41 Entry made prior to production of documents. When entry is made prior to the...

  7. 19 CFR 113.41 - Entry made prior to production of documents.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ...false Entry made prior to production of documents. 113.41 Section 113.41 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.41 Entry made prior to production of documents. When entry is made prior to the...

  8. 19 CFR 113.41 - Entry made prior to production of documents.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ...false Entry made prior to production of documents. 113.41 Section 113.41 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.41 Entry made prior to production of documents. When entry is made prior to the...

  9. 19 CFR 113.42 - Time period for production of documents.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... false Time period for production of documents. 113.42 Section 113.42 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.42 Time period for production of documents. Except when another period is...

  10. 19 CFR 113.42 - Time period for production of documents.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... false Time period for production of documents. 113.42 Section 113.42 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.42 Time period for production of documents. Except when another period is...

  11. 19 CFR 113.42 - Time period for production of documents.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... false Time period for production of documents. 113.42 Section 113.42 Customs...TREASURY CUSTOMS BONDS Production of Documents § 113.42 Time period for production of documents. Except when another period is...

  12. 48 CFR 1371.113 - Department of Labor occupational safety and health standards for ship repair.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...of Labor occupational safety and health standards for ship repair. 1371.113 Section 1371.113 Federal...DEPARTMENT SUPPLEMENTAL REGULATIONS ACQUISITIONS INVOLVING SHIP CONSTRUCTION AND SHIP REPAIR Provisions and Clauses 1371.113...

  13. 48 CFR 1371.113 - Department of Labor occupational safety and health standards for ship repair.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...of Labor occupational safety and health standards for ship repair. 1371.113 Section 1371.113 Federal...DEPARTMENT SUPPLEMENTAL REGULATIONS ACQUISITIONS INVOLVING SHIP CONSTRUCTION AND SHIP REPAIR Provisions and Clauses 1371.113...

  14. 48 CFR 1371.113 - Department of Labor occupational safety and health standards for ship repair.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...of Labor occupational safety and health standards for ship repair. 1371.113 Section 1371.113 Federal...DEPARTMENT SUPPLEMENTAL REGULATIONS ACQUISITIONS INVOLVING SHIP CONSTRUCTION AND SHIP REPAIR Provisions and Clauses 1371.113...

  15. 48 CFR 1371.113 - Department of Labor occupational safety and health standards for ship repair.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...of Labor occupational safety and health standards for ship repair. 1371.113 Section 1371.113 Federal...DEPARTMENT SUPPLEMENTAL REGULATIONS ACQUISITIONS INVOLVING SHIP CONSTRUCTION AND SHIP REPAIR Provisions and Clauses 1371.113...

  16. 48 CFR 1371.113 - Department of Labor occupational safety and health standards for ship repair.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...of Labor occupational safety and health standards for ship repair. 1371.113 Section 1371.113 Federal...DEPARTMENT SUPPLEMENTAL REGULATIONS ACQUISITIONS INVOLVING SHIP CONSTRUCTION AND SHIP REPAIR Provisions and Clauses 1371.113...

  17. 50 CFR 86.113 - What if I have recently completed a boat access survey?

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...have recently completed a boat access survey? 86.113 Section 86.113 Wildlife...How States Will Complete Access Needs Surveys § 86.113 What if I have recently completed a boat access survey? If the recent survey...

  18. 50 CFR 86.113 - What if I have recently completed a boat access survey?

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...have recently completed a boat access survey? 86.113 Section 86.113 Wildlife...How States Will Complete Access Needs Surveys § 86.113 What if I have recently completed a boat access survey? If the recent survey...

  19. 50 CFR 86.113 - What if I have recently completed a boat access survey?

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ...have recently completed a boat access survey? 86.113 Section 86.113 Wildlife...How States Will Complete Access Needs Surveys § 86.113 What if I have recently completed a boat access survey? If the recent survey...

  20. 50 CFR 86.113 - What if I have recently completed a boat access survey?

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ...have recently completed a boat access survey? 86.113 Section 86.113 Wildlife...How States Will Complete Access Needs Surveys § 86.113 What if I have recently completed a boat access survey? If the recent survey...

  1. Optimization of Indium Bump Morphology for Improved Flip Chip Devices

    NASA Technical Reports Server (NTRS)

    Jones, Todd J.; Nikzad, Shouleh; Cunningham, Thomas J.; Blazejewski, Edward; Dickie, Matthew R.; Hoenk, Michael E.; Greer, Harold F.

    2011-01-01

    Flip-chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices that directly connects an active element or detector to a substrate readout face-to-face, eliminating the need for wire bonding. In order to make conductive links between the two parts, a solder material is used between the bond pads on each side. Solder bumps, composed of indium metal, are typically deposited by thermal evaporation onto the active regions of the device and substrate. While indium bump technology has been a part of the electronic interconnect process field for many years and has been extensively employed in the infrared imager industry, obtaining a reliable, high-yield process for high-density patterns of bumps can be quite difficult. Under the right conditions, a moderate hydrogen plasma exposure can raise the temperature of the indium bump to the point where it can flow. This flow can result in a desirable shape where indium will efficiently wet the metal contact pad to provide good electrical contact to the underlying readout or imager circuit. However, it is extremely important to carefully control this process as the intensity of the hydrogen plasma treatment dramatically affects the indium bump morphology. To ensure the fine-tuning of this reflow process, it is necessary to have realtime feedback on the status of the bumps. With an appropriately placed viewport in a plasma chamber, one can image a small field (a square of approximately 5 millimeters on each side) of the bumps (10-20 microns in size) during the hydrogen plasma reflow process. By monitoring the shape of the bumps in real time using a video camera mounted to a telescoping 12 magnifying zoom lens and associated optical elements, an engineer can precisely determine when the reflow of the bumps has occurred, and can shut off the plasma before evaporation or de-wetting takes place.

  2. Plasma Treatment to Remove Carbon from Indium UV Filters

    NASA Technical Reports Server (NTRS)

    Greer, Harold F.; Nikzad, Shouleh; Beasley, Matthew; Gantner, Brennan

    2012-01-01

    The sounding rocket experiment FIRE (Far-ultraviolet Imaging Rocket Experiment) will improve the science community fs ability to image a spectral region hitherto unexplored astronomically. The imaging band of FIRE (.900 to 1,100 Angstroms) will help fill the current wavelength imaging observation hole existing from approximately equal to 620 Angstroms to the GALEX band near 1,350 Angstroms. FIRE is a single-optic prime focus telescope with a 1.75-m focal length. The bandpass of 900 to 1100 Angstroms is set by a combination of the mirror coating, the indium filter in front of the detector, and the salt coating on the front of the detector fs microchannel plates. Critical to this is the indium filter that must reduce the flux from Lymanalpha at 1,216 Angstroms by a minimum factor of 10(exp -4). The cost of this Lyman-alpha removal is that the filter is not fully transparent at the desired wavelengths of 900 to 1,100 Angstroms. Recently, in a project to improve the performance of optical and solar blind detectors, JPL developed a plasma process capable of removing carbon contamination from indium metal. In this work, a low-power, low-temperature hydrogen plasma reacts with the carbon contaminants in the indium to form methane, but leaves the indium metal surface undisturbed. This process was recently tested in a proof-of-concept experiment with a filter provided by the University of Colorado. This initial test on a test filter showed improvement in transmission from 7 to 9 percent near 900 with no process optimization applied. Further improvements in this performance were readily achieved to bring the total transmission to 12% with optimization to JPL's existing process.

  3. Inverse Photoemission study of Au(113)

    NASA Astrophysics Data System (ADS)

    Häberle, P.; Ibañez, W.; Vargas, P.

    1997-03-01

    We have used inverse photoemission (IPE) in the isochromat mode to study the (1x5) clean surface reconstruction of Au(113). Our data show several surface resonances which disperse strongly as a function of k_//. Using LMTO formalism we have performed a band structure calculation and used these results to predict the dispersion of bulk-derived features on the IPE spectra of this surface. The comparison of the calculation and experimental data has allowed us to clearly identify a new unoccupied surface state in the band gap along the [33bar2] direction and also the origin of several other resonances present in our spectra. This research has been partially funded by FONDECYT, USACH and UTFSM, Chile.

  4. MOCVD growth of gallium nitride with indium surfactant

    NASA Astrophysics Data System (ADS)

    Won, Dong Jin

    In this thesis research, the effect of indium surfactant on Ga-polar and N-polar GaN films grown at 950 °C by MOCVD on various substrates such as Si-face SiC, bulk GaN, Si(111), and C-face SiC was studied to investigate the stress relaxation mechanism, structural, and optical properties of GaN films which were modified by the indium surfactant. The effect of indium surfactant on GaN films grown on SiC was studied first. In the 1.8 microm thick Ga-polar GaN films grown on lattice-mismatched Si-face SiC substrates utilizing indium surfactant at 950 °C, inverted hexagonal pyramid surface defects, so-called V-defects which consist of six (1011) planes, formed at threading dislocations on the GaN surface, which gave rise to the relaxation of compressive misfit stress in an elastic way. Simultaneously, enhanced surface mobility of Ga and N adatoms with indium surfactant lead to improved 2D growth, which may be contradictory to the formation of surface defects like V-defects. In order to find the driving force for V-defect formation in the presence of indium, a nucleation and growth model was developed, taking into consideration the strain, surface, and dislocation energies modified by indium surfactant. This model found that the V-defect formation can be energetically preferred since indium reduces the surface energy of the (1011) plane, which gives rise to the V-defect formation and growth that can overcome the energy barrier at the critical radius of the V-defect. These Ga-polar GaN films were found to be unintentionally doped with Si. Thus, an investigation into the effect of intentional Si doping at a constant TMIn flow rate on GaN films was also performed. Si turned out to be another important factor in the generation of V-defects because Si may be captured at the threading dislocation cores by forming Si -- N bonds, acting as a mask to locally prevent GaN growth. This behavior appeared to assist the initiation of the V-defect which enables V-defects to easily grow beyond the critical radius. Thus, introduction of indium surfactant and Si doping was found to be the most favorable conditions for V-defect formation in Ga-polar GaN films grown on Si-face SiC substrates. The nucleation and growth model predicted that V-defects may not form in homoepitaxy because the energy barrier for V-defect formation approaches infinity due to zero misfit stress. When indium surfactant and Si dopant were introduced simultaneously during the homoepitaxial growth, V-defects did not form in 1.8 microm thick Ga-polar GaN films grown at 950 °C on bulk GaN that had very low threading dislocation density, as predicted by the nucleation and growth model. Ga-polar GaN films grown on Si(111) substrates using indium surfactant showed that additional tensile stress was induced by indium with respect to the reference GaN. Since cracking is known to be a stress relaxation mechanism for tension, the In-induced additional tensile stress is thus detrimental to the GaN films which experience the tensile thermal stress associated with the difference in coefficient of thermal expansion between GaN and the substrate during cooling after growth. The generation of tensile stress by indium seemed correlated with a reduction of V-defects since a high density of V-defects formed under the initial compressive stress at the GaN nucleation stage and then V-defect density decreased as the film grew. Even though the initial misfit stress of the GaN film grown on Si(111) was lower than that of GaN grown on SiC, a high density of V-defects were created under the initial compressive stress. Therefore, the high density of threading dislocations was believed to strongly drive the V-defect formation under In-rich conditions. Consequently, without using high quality bulk GaN substrates, V-defects could not be avoided in Ga-polar GaN films grown on foreign substrates such as Si-face SiC and Si(111) in the presence of indium surfactant and Si dopants during growth. Thus, N-polar GaN films were investigated using vicinal C-face SiC substrates because a theoretical study utiliz

  5. Palladium-indium catalyzed reduction of N-nitrosodimethylamine: indium as a promoter metal.

    PubMed

    Davie, Matthew G; Shih, Kaimin; Pacheco, Federico A; Leckie, James O; Reinhard, Martin

    2008-04-15

    An emerging technology for the removal of N-nitrosodimethylamine (NDMA) from drinking and groundwater is reductive destruction using noble metal catalysts and hydrogen gas as a reducing agent. Bimetallic palladium-indium (Pd-In) supported on alumina combines the ability of Into activate NDMA with the hydrogen activating properties of Pd. This study examined the effect of In addition to a commercial 5% Pd by weight on gamma-Al2O3 catalyst on the efficacy of NDMA reduction. The pseudo-first-order rate constant increased proportionately to In loading from 0.057 h(-1) for 0% In to a maximum of 0.25 h(-1) for 1% In and then decreased with additional in loading. Data suggest that hydrogen activation occurred only on Pd surfaces and In activated NDMA 20 times more effectively than Pd on a mass basis. The rate-limiting factor was NDMA activation for In loadings below 1%. The decrease at higher loadings is interpreted as In blocking pore spaces and limiting access to Pd sites, suggesting monatomic hydrogen limitation. The only products detected were dimethylamine and ammonium with carbon and nitrogen balances in excess of 92%, consistent with a mechanism involving reductive N-N bond cleavage. Results from this study serve as a basis for optimizing bimetallic catalysts for treating NDMA contaminated waters. PMID:18497163

  6. lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells

    E-print Network

    Fejer, Martin M.

    lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord extended. However, the lattice mismatch of InGaAs and AlGaAs limits the range of use- ful indium content in InGaAs/AlGaAs quantum wells of up to 15% indium concentration.8 By using a linearly composi- tionally

  7. ATTNUATION D'ONDES ULTRASONORES DANS L'ANTIMONIURE D'INDIUM DGNR

    E-print Network

    Paris-Sud XI, Université de

    397 ATT�NUATION D'ONDES ULTRASONORES DANS L'ANTIMONIURE D'INDIUM D�G�N�R� J. Y. PRIEUR Laboratoire longitudinales de 9 GHz se propageant suivant l'axe (111) d'un cristal d'antimoniure d'indium dégénéré sous l along (111) axis, in a degenerate Indium Antimonide crystal. This crystal was placed at 2 °K in a high

  8. Sprthesis of Iil)O Using Indium-Mediated Allylation of

    E-print Network

    Prentiss, Mara

    37L4 Sprthesis of Iil)O Using Indium-Mediated Allylation of 2,324,5-Dt-o-t Til:eo1tJff ffi,3:4,5-dt-O- isopropylidene-o-arabinose (2) srith ethyl 2-(bromo- methyl)acrylate and indium.3{bromomethyl)acrylate,5 and formic acid in aqueousacetonitrile was stirred at 0 oC,and indium metal was addedin

  9. The infrared spectrum of indium in silicon revisited A. Tardella and B. Pajot

    E-print Network

    Paris-Sud XI, Université de

    1789 The infrared spectrum of indium in silicon revisited A. Tardella and B. Pajot Groupe de Le spectre d'absorption de l'indium dans le silicium a été mesuré dans des conditions où l concentration d'indium dans le silicium par une méthode spectroscopique, nous trouvons que l'élargissement par

  10. PHNOMNES DE TRANSPORT ATOMIQUE DANS LES ALLIAGES LIQUIDES INDIUM-PLOMB

    E-print Network

    Boyer, Edmond

    PAGE L-89 PHÉNOMÈNES DE TRANSPORT ATOMIQUE DANS LES ALLIAGES LIQUIDES INDIUM-PLOMB J. F. RIALLAND le système indium- plomb à l'aide d'un modèle de sphères dures. A partir des données expérimentales, on obtient des diamètres de c0153ur dur de 3,04 Å pour l'indium et 3,40 Å pour le plomb. Les distances entre

  11. Blocking of indium incorporation by antimony in III-V-Sb nanostructures

    NASA Astrophysics Data System (ADS)

    Sanchez, A. M.; Beltran, A. M.; Beanland, R.; Ben, T.; Gass, M. H.; de la Peña, F.; Walls, M.; Taboada, A. G.; Ripalda, J. M.; Molina, S. I.

    2010-04-01

    The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

  12. Geology, geochemistry and mineralogy of indium resources at Mount Pleasant, New Brunswick, Canada

    Microsoft Academic Search

    W. D. Sinclair; G. J. A. Kooiman; D. A. Martin; I. M. Kjarsgaard

    2006-01-01

    Indium-bearing deposits at Mount Pleasant, New Brunswick represent one of two major episodes of mineralization associated with granitic intrusions near the southwest margin of the Late Devonian Mount Pleasant caldera. Porphyry tungsten–molybdenum deposits, with negligible indium content, are associated with the earliest stage of intrusion and represent the first mineralization episode. Indium-bearing vein, replacement and breccia-hosted tin-base metal deposits are

  13. Fluorine-Doped Indium Oxide Thin Films Prepared by Chemical Vapor Deposition

    Microsoft Academic Search

    Toshiro Maruyama; Kunihiro Fukui

    1990-01-01

    Transparent conductive fluorine-doped indium oxide thin films were prepared by an atmospheric-pressure chemical vapor deposition method without using an oxygen donor. The raw materials were indium 2-ethylhexanoate and indium fluoride. The polycrystalline films were obtained at a reaction temperature in the range of 330-430°C. For the 57.8-nm-thick film deposited at 400°C, the resistivity was 2.89× 10-4 Omega\\\\cdotcm, and the transmittance

  14. Absorption of ac fields in amorphous indium-oxide films

    SciTech Connect

    Ovadyahu, Z. [Racah Institute of Physics, the Hebrew University, Jerusalem 91904 (Israel)

    2014-08-20

    Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (In{sub x}O) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In{sub 2}O{sub 3?x}) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

  15. Determination of series resistance of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Weinberg, Irving

    1991-01-01

    The series resistance of a solar cell is an important parameter, which must be minimized to achieve high cell efficiencies. The cell series resistance is affected by the starting material, its design, and processing. The theoretical approach proposed by Jia, et. al., is used to calculate the series resistance of indium phosphide solar cells. It is observed that the theoretical approach does not predict the series resistance correctly in all cases. The analysis was modified to include the use of effective junction ideality factor. The calculated results were compared with the available experimental results on indium phosphide solar cells processed by different techniques. It is found that the use of process dependent junction ideality factor leads to better estimation of series resistance. An accurate comprehensive series resistance model is warranted to give proper feedback for modifying the cell processing from the design state.

  16. Enhanced superconducting pairing interaction in indium-doped tin telluride

    SciTech Connect

    Erickson, A.S.

    2010-05-03

    The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

  17. Enhanced superconducting pairing interaction in indium-doped tin telluride

    SciTech Connect

    Erickson, A.S.; Chu, J.-H.; /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Toney, M.F.; Geballe, T.H.; Fisher, I.R.; /SLAC, SSRL /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.

    2010-02-15

    The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

  18. Preparation and photoluminescence study of mesoporous indium hydroxide nanorods

    SciTech Connect

    Li, Changyu [College of Material Science and Engineering, Northeast Forestry University, Harbin 150040 (China)] [College of Material Science and Engineering, Northeast Forestry University, Harbin 150040 (China); Lian, Suoyuan [Functional Nano and Soft Materials Laboratory, Soochow University, No. 199 Renai Road, Suzhou, Jiangsu 215123 (China) [Functional Nano and Soft Materials Laboratory, Soochow University, No. 199 Renai Road, Suzhou, Jiangsu 215123 (China); School of Chemical Engineering and Materials, Dalian Polytechnic University, Dalian 116034 (China); Liu, Yang [Functional Nano and Soft Materials Laboratory, Soochow University, No. 199 Renai Road, Suzhou, Jiangsu 215123 (China)] [Functional Nano and Soft Materials Laboratory, Soochow University, No. 199 Renai Road, Suzhou, Jiangsu 215123 (China); Liu, Shouxin, E-mail: liushouxin@126.com [College of Material Science and Engineering, Northeast Forestry University, Harbin 150040 (China)] [College of Material Science and Engineering, Northeast Forestry University, Harbin 150040 (China); Kang, Zhenhui, E-mail: zhkang@suda.edu.cn [Functional Nano and Soft Materials Laboratory, Soochow University, No. 199 Renai Road, Suzhou, Jiangsu 215123 (China)] [Functional Nano and Soft Materials Laboratory, Soochow University, No. 199 Renai Road, Suzhou, Jiangsu 215123 (China)

    2010-02-15

    Mesoporous indium hydroxide nanorods were successfully synthesized by a mild one-step one-pot method. The obtained samples were characterized by X-ray diffraction, transmission electron microscopy with selected area electron diffraction, N{sub 2} adsorption, ultraviolet-visible absorption and photoluminescence, respectively. Transmission electron microscopy showed that there were some pores in the samples, which were mainly composed of rod-like shapes with length of 300 nm and diameter of 90 nm. N{sub 2} adsorption/desorption measurements confirmed that the prepared powder was mesoporous with average pore diameter of 3.1 nm. The ultraviolet-visible absorption spectroscopy analysis indicated that the band gap energy of the samples was 5.15 eV. Photoluminescence spectrum showed that there were two strong emissions under ultraviolet light irradiation. The growth mechanism of indium hydroxide nanorods and the role of cetyltrimethyl ammonium bromide were also discussed.

  19. The Calibration of the DD Neutron Indium Activation Diagnostic

    NASA Astrophysics Data System (ADS)

    Song, Zifeng; Chen, Jiabin; Liu, Zhongjie; Zhan, Xiayu; Tang, Qi

    2015-04-01

    The indium activation diagnostic was calibrated using an accelerator neutron source to facilitate the diagnosis of deuterium-deuterium (DD) neutron yields of implosion experiments in the Shenguang-III facility. The scattered neutron background of the accelerator room was measured by placing a polypropylene shadow bar in front of the indium sample, so as to correct the calibrated factor of this activation diagnostic. The proper size of the shadow bar was given by Monte Carlo simulation. The calibration results showed that the scattered neutron background of the accelerator room was about 9% of the incident neutrons on the sample. Subtracting the portion induced by the neutron background, the calibrated factor for this sample condition was 4.52×10?7 counts/n with an uncertainty of 4.3%.

  20. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOEpatents

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.