Science.gov

Sample records for induced metal-insulator transition

  1. Pressure-induced metal-insulator transition in spinel compound CuV 2S 4

    NASA Astrophysics Data System (ADS)

    Okada, H.; Koyama, K.; Hedo, M.; Uwatoko, Y.; Watanabe, K.

    2008-04-01

    In order to investigate the pressure effect on electrical properties of CuV 2S 4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV 2S 4 at 8 GPa.

  2. Metal-insulator-transition in SrTiO3 induced by argon bombardment combined with field effect

    SciTech Connect

    Xu, Jie; Zhu, Zhengyong; Zhao, Hengliang; Luo, Zhijiong

    2014-12-15

    By fabricating the Field-Effect-Transistors on argon bombardment SrTiO3 substrates, not only we have achieved one of the best mobility for Field-Effect-Transistors fabricated on SrTiO3, but also realized strong field induced Metal-Insulator-Transition. The critical sheet resistance for the Metal-Insulator-Transition is only 1/7 of the value obtained in the former experiments, indicating a different mechanism. Further study shows that the Metal-Insulator-Transition can be attributed to the oxygen vacancies formed after the bombardment becoming the electron donor under the electric field modulation, increasing SrTiO3 surface electron density and transforming the substrate into metallic state.

  3. Local Peltier-effect-induced reversible metal-insulator transition in VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

    2016-06-01

    We report anomalous resistance leaps and drops in VO2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal-insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

  4. Metal-insulator transition at lanthanum aluminate-strontium titanate interface induced by oxygen plasma treatment

    NASA Astrophysics Data System (ADS)

    Dai, Weitao; Cen, Cheng

    The formation of two-dimensional electron gas (2DEG) at lanthanum aluminate (LAO)-strontium titanate (STO) interface, as well as the 2DEG's unique characters in metal-insulator transition, have evoked widespread interest. Highly insulating interfaces are obtained for the structures with LAO thickness below 3 unit cell (uc) and abrupt transition from an insulating to conducting interface was observed for samples with thicker LAO layers. For 3uc LAO/STO samples, reversible nanoscale control of the metal-insulator transition was implemented by a conductive AFM writing. Our research furtherly discovered a very stable metal-insulator transition can be achieved by oxygen plasma (OP) treatment for samples with thicker LAO layers. AFM imaging and XPS measurement demonstrated the low energy OP treatment altered only the surface bonds, which confirmed the importance of surface properties in the heterostructures. Then microscale Hall bars were patterned at the interface and imaged by electrostatic force microscope. Their transport and magnetic properties were measured. This research will promote deeper understanding about the interfacial metal-insulator transition mechanism and open new device opportunities. This work is supported by the Department of Energy Grant No. DE-SC-0010399 and National Science Foundation Grant No. NSF-1454950.

  5. Oxygen vacancy induced metal-insulator transition in LaNiO3

    NASA Astrophysics Data System (ADS)

    Misra, Debolina; Kundu, Tarun Kumar

    2016-01-01

    First principle calculations were carried out to examine the metal-insulator transition in LaNiO3 due to changes in oxygen content and consequent alteration of valence state of nickel. The optical properties of all the oxygen deficient LaNiO3-x compounds were calculated to illustrate the electronic structures of the compounds and the change they undergo during the metal-insulator transition. The metallic nature of LaNiO3 is characterized by the Drude peak in the optical conductivity spectra and the high reflectivity it exhibits in the low frequency region. The complex dielectric function and the optical conductivity spectra clearly show that, for x = 0.25, i.e., LaNiO2.75 becomes a semiconductor. As x increases further to 0.5, a gap in the optical spectra appears, indicating the insulating nature of LaNiO2.5. The insulating state of LaNiO2.5 is best described by the GW+HSE method which gives a good estimation of the optical gap of the material. The absorption spectra of LaNiO2.5 clearly reveal that this material is transparent in the low frequency region. This metal-insulator transition is followed by another insulator to semiconductor transition, as x is increased further to 1 i.e., in case of LaNiO2. The metal-insulator transition is then explained on the basis of electron localization function calculations, which show the increase in the covalent bonding in the system as the transition to the insulating state sets in.

  6. Approximating metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Danieli, Carlo; Rayanov, Kristian; Pavlov, Boris; Martin, Gaven; Flach, Sergej

    2015-12-01

    We consider quantum wave propagation in one-dimensional quasiperiodic lattices. We propose an iterative construction of quasiperiodic potentials from sequences of potentials with increasing spatial period. At each finite iteration step, the eigenstates reflect the properties of the limiting quasiperiodic potential properties up to a controlled maximum system size. We then observe approximate Metal-Insulator Transitions (MIT) at the finite iteration steps. We also report evidence on mobility edges, which are at variance to the celebrated Aubry-André model. The dynamics near the MIT shows a critical slowing down of the ballistic group velocity in the metallic phase, similar to the divergence of the localization length in the insulating phase.

  7. Metal-insulator transition induced in CaVO{sub 3} thin films

    SciTech Connect

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  8. Strain-induced significant increase in metal-insulator transition temperature in oxygen-deficient Fe oxide epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Hirai, Kei; Kan, Daisuke; Ichikawa, Noriya; Mibu, Ko; Yoda, Yoshitaka; Andreeva, Marina; Shimakawa, Yuichi

    2015-01-01

    Oxygen coordination of transition metals is a key for functional properties of transition-metal oxides, because hybridization of transition-metal d and oxygen p orbitals determines correlations between charges, spins and lattices. Strain often modifies the oxygen coordination environment and affects such correlations in the oxides, resulting in the emergence of unusual properties and, in some cases, fascinating behaviors. While these strain effects have been studied in many of the fully-oxygenated oxides, such as ABO3 perovskites, those in oxygen-deficient oxides consisting of various oxygen coordination environments like tetrahedra and pyramids as well as octahedra remain unexplored. Here we report on the discovery of a strain-induced significant increase, by 550 K, in the metal-insulator transition temperature of an oxygen-deficient Fe oxide epitaxial thin film. The observed transition at 620 K is ascribed to charge disproportionation of Fe3.66+ into Fe4+ and Fe3+, associated with oxygen-vacancy ordering. The significant increase in the metal-insulator transition temperature, from 70 K in the bulk material, demonstrates that epitaxial growth of oxygen-deficient oxides under substrate-induced strain is a promising route for exploring novel functionality.

  9. Strain-induced significant increase in metal-insulator transition temperature in oxygen-deficient Fe oxide epitaxial thin films

    PubMed Central

    Hirai, Kei; Kan, Daisuke; Ichikawa, Noriya; Mibu, Ko; Yoda, Yoshitaka; Andreeva, Marina; Shimakawa, Yuichi

    2015-01-01

    Oxygen coordination of transition metals is a key for functional properties of transition-metal oxides, because hybridization of transition-metal d and oxygen p orbitals determines correlations between charges, spins and lattices. Strain often modifies the oxygen coordination environment and affects such correlations in the oxides, resulting in the emergence of unusual properties and, in some cases, fascinating behaviors. While these strain effects have been studied in many of the fully-oxygenated oxides, such as ABO3 perovskites, those in oxygen-deficient oxides consisting of various oxygen coordination environments like tetrahedra and pyramids as well as octahedra remain unexplored. Here we report on the discovery of a strain-induced significant increase, by 550 K, in the metal-insulator transition temperature of an oxygen-deficient Fe oxide epitaxial thin film. The observed transition at 620 K is ascribed to charge disproportionation of Fe3.66+ into Fe4+ and Fe3+, associated with oxygen-vacancy ordering. The significant increase in the metal-insulator transition temperature, from 70 K in the bulk material, demonstrates that epitaxial growth of oxygen-deficient oxides under substrate-induced strain is a promising route for exploring novel functionality. PMID:25600001

  10. Field-Induced Metal-Insulator Transition in a Two-Dimensional Organic Superconductor

    SciTech Connect

    Wosnitza, J.; Wanka, S.; Hagel, J.; Lo''hneysen, H. v.; Qualls, J. S.; Brooks, J. S.; Balthes, E.; Schlueter, J. A.; Geiser, U.; Mohtasham, J.

    2001-01-15

    The quasi-two-dimensional organic superconductor {beta}''-( BEDT-TTF){sub 2}SF{sub 5} CH{sub 2}CF {sub 2}SO{sub 3} (T{sub c}{approx}4.4 K) shows very strong Shubnikov--de Haas (SdH) oscillations which are superimposed on a highly anomalous steady background magnetoresistance, R{sub b} . Comparison with de Haas--van Alphen oscillations allows a reliable estimate of R{sub b} which is crucial for the correct extraction of the SdH signal. At low temperatures and high magnetic fields insulating behavior evolves. The magnetoresistance data violate Kohler's rule, i.e., cannot be described within the framework of semiclassical transport theory, but converge onto a universal curve appropriate for dynamical scaling at a metal-insulator transition.

  11. Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.

    2014-06-01

    Low-disorder and high-mobility two-dimensional (2D) electron (or hole) systems confined in semiconductor heterostructures undergo an apparent metal-insulator transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. The goal of the current work is to obtain the critical density (nc) for the 2D MIT with the system being an effective metal (Anderson insulator) for density n above (below) nc. We study the 2D MIT phenomenon theoretically as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, kFl=1, where kF(n) is the 2D Fermi wave vector and l (n) is the disorder-limited quantum mean free path on the metallic side. Calculating the quantum mean free path in the effective metallic phase from a realistic Boltzmann transport theory including disorder scattering effects, we solve the integral equation (with l depending on n through multidimensional integrals) defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density nc as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the critical density is the density dependence of the screened Coulomb disorder. Our calculated results for the crossover critical density nc appear to be in qualitative and semiquantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We also compare the calculated critical density obtained from the Ioffe-Regel criterion with that obtained from a

  12. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl.

    PubMed

    Naka, Takashi; Nikitin, Artem M; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-20

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) (γ) . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state. PMID:27218143

  13. Mott metal-insulator transition induced by utilizing a glasslike structural ordering in low-dimensional molecular conductors

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Müller, Jens; Sasaki, Takahiko

    2014-11-01

    We utilize a glasslike structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt κ -(BEDT-TTF)2Cu [N (CN)2Br ]. In this material, the terminal ethylene groups of the BEDT-TTF molecules can adopt two different structural orientations within the crystal structure, namely eclipsed (E) and staggered (S) with the relative orientation of the outer C-C bonds being parallel and canted, respectively. These two conformations are thermally disordered at room temperature and undergo a glasslike ordering transition at Tg˜75 K. When cooling through Tg, a small fraction that depends on the cooling rate remains frozen in the S configuration, which is of slightly higher energy, corresponding to a controllable degree of structural disorder. We demonstrate that, when thermally coupled to a low-temperature heat bath, a pulsed heating current through the sample causes a very fast relaxation with cooling rates at Tg of the order of several 1000 K /min . The freezing of the structural degrees of freedom causes a decrease of the electronic bandwidth W with increasing cooling rate, and hence a Mott metal-insulator transition as the system crosses the critical ratio (W/U ) c of bandwidth to on-site Coulomb repulsion U . Due to the glassy character of the transition, the effect is persistent below Tg and can be reversibly repeated by melting the frozen configuration upon warming above Tg. Both by exploiting the characteristics of slowly changing relaxation times close to this temperature and by controlling the heating power, the materials can be fine-tuned across the Mott transition. A simple model allows for an estimate of the energy difference between the E and S state as well as the accompanying degree of frozen disorder in the population of the two orientations.

  14. Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film

    NASA Astrophysics Data System (ADS)

    Liao, G. M.; Chen, S.; Fan, L. L.; Chen, Y. L.; Wang, X. Q.; Ren, H.; Zhang, Z. M.; Zou, C. W.

    2016-04-01

    Insulator to metal phase transitions driven by external electric field are one of the hottest topics in correlated oxide study. While this electric triggered phenomena always mixes the electric field switching effect and joule thermal effect together, which are difficult to clarify the intrinsic mechanism. In this paper, we investigate the dynamical process of voltage-triggered metal-insulator transition (MIT) in a VO2 crystal film and observe the temperature dependence of the threshold voltages and switching delay times, which can be explained quite well based on a straightforward joule thermal model. By conducting the voltage controlled infrared transmittance measurement, the delayed infrared transmission change is also observed, further confirming the homogeneous switching process for a large-size film. All of these results show strong evidences that joule thermal effect plays a dominated role in electric-field-induced switching of VO2 crystal.

  15. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model. PMID:27136956

  16. Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Yoon, Joonseok; Kim, Howon; Mun, Bongjin Simon; Park, Changwoo; Ju, Honglyoul

    2016-03-01

    The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO2) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO2. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT in various-sized devices. Our findings on VO2 can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.

  17. Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

    NASA Astrophysics Data System (ADS)

    Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

    2007-03-01

    We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

  18. Field-induced quantum metal-insulator transition in the pyrochlore iridate Nd2Ir2O7

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming; Kohama, Yoshimitsu; Tomita, Takahiro; Ishizuka, Hiroaki; Hsieh, Timothy H.; Ishikawa, Jun J.; Kindo, Koichi; Balents, Leon; Nakatsuji, Satoru

    2016-02-01

    The metal-insulator transition (MIT) is a hallmark of strong correlation in solids. Quantum MITs at zero temperature have been observed in various systems tuned by either carrier doping or bandwidth. However, such transitions have rarely been induced by application of magnetic field, as normally the field scale is too small in comparison with the charge gap, whose size is a fraction of the Coulomb repulsion energy (~1 eV). Here we report the discovery of a quantum MIT tuned by a field of ~10 T, whose magnetoresistance exceeds 60,000%. In particular, our anisotropic magnetotransport measurements on the cubic insulator Nd2Ir2O7 (ref. ) reveal that the insulating state can be suppressed by such a field to a zero-temperature quantum MIT, but only for fields near the [001] axis. The strong sensitivity to the field direction is remarkable for a cubic crystal, as is the fact that the MIT can be driven by such a small magnetic field, given the 45 meV gap energy, which is of order of 50 times the Zeeman energy for an Ir4+ spin. The systematic change in the MIT from continuous near zero field to first order under fields indicates the existence of a tricritical point proximate to the quantum MIT. We argue that these phenomena imply both strong correlation effects on the Ir electrons and an active role for the Nd spins.

  19. Plasmonic effects on the laser-induced metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; MacQuarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconducting to metallic phase transition that can be induced thermally, optically, or electrically. When switched to the high-temperature (T > 68°C) metallic phase, the greatest contrast in the optical properties occurs at wavelengths in the near-to-mid-infrared and beyond. In the visible to near-infrared, however, upon switching for wavelengths between ~500-1000 nm, VO2 transmits more light in the metallic phase. In this paper, we report studies of the effect of near-IR irradiation (785 nm) on lithographically prepared arrays of gold nanoparticles (NPs) covered with a thin film of VO2 and find that the presence of the NPs substantially lowers the laser threshold for low-power induction of the phase transition. Hybrid Au::VO2 structures were created by coating lithographically prepared arrays of gold nanoparticles (NPs) (diameters 140 and 200 nm, array spacing 450 nm) with 60 nm thick films of VO2 by pulsed laser deposition. Due to resonant absorption of the Au particle-plasmon resonance (PPR) at 785 nm, a temperature-dependent shift in the PPR can be generated by switching the VO2 from one phase to another. We have measured the switching behavior of VO2 and Au::VO2 structures using shuttered CW laser irradiation in order to study both optical and thermal mechanisms of the phase transition. Transient absorption measurements using a shuttered 785 nm pump laser corresponding to the PPR resonance of the Au NPs and 1550 nm CW probe show that the presence of the Au NPs lowers the threshold laser power required to induce the phase transition.

  20. Optically induced metal-insulator transition in gold::vanadium dioxide hybrid structures

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Kaye, Anthony; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semi-conducting to metallic phase transition that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameters up to 200 nm with 60 nm thick films of VO2 via pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a chopped 780 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Additionally, pump-probe measurements were conducted on the structures using a Ti:sapphire oscillator with 100-fs pulses. Results show that the presence of Au NPs lowers the threshold laser power required to induce the phase transition. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  1. Ferroelectric control of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    He, Xu; Jin, Kui-juan; Ge, Chen; Ma, Zhong-shui; Yang, Guo-zhen

    2016-03-01

    We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with another ferroelectric material based on first principle calculations. The operating principle is that the rotation of oxygen octahedra tuned by the ferroelectric polarization can modulate the superexchange interaction in this perovskite. We designed a tri-color superlattice of (BiFeO3)N/LaNiO3/LaTiO3, in which the BiFeO3 layers are ferroelectric, the LaNiO3 layer is the layer of which the electronic structure is to be tuned, and LaTiO3 layer is inserted to enhance the inversion asymmetry. By reversing the ferroelectric polarization in this structure, there is a metal-insulator transition of the LaNiO3 layer because of the changes of crystal field splitting of the Ni eg orbitals and the bandwidth of the Ni in-plane eg orbital. It is highly expected that a metal-transition can be realized by designing the structures at the interfaces for more materials.

  2. Low-power laser induced metal-insulator transition in gold::vanadium dioxide nanoarrays

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F.

    2010-10-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconductor-to-metal transition (SMT) that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameter 140 nm with a 60 nm thick film of VO2 by pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a mechanically shuttered 785 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Results show that the presence of Au NPs significantly lowers the threshold laser power required to induce the SMT. Measurements on arrays of different grating constants (350 nm and 500 nm) support the hypothesis that the particles are acting as ``nano-radiators'' that absorb and redeposit thermal energy by scattering light back into the film. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  3. Metal Insulator transition in Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Jovaini, Azita; Fujita, Shigeji; Suzuki, Akira; Godoy, Salvador

    2012-02-01

    MAR12-2011-000262 Abstract Submitted for the MAR12 Meeting of The American Physical Society Sorting Category: 03.9 (T) On the metal-insulator-transition in vanadium dioxide AZITA JOVAINI, SHIGEJI FUJITA, University at Buffalo, SALVADOR GODOY, UNAM, AKIRA SUZUKI, Tokyo University of Science --- Vanadium dioxide (VO2) undergoes a metal-insulator transition (MIT) at 340 K with the structural change from tetragonal to monoclinic crystal. The conductivity _/ drops at MIT by four orders of magnitude. The low temperature monoclinic phase is known to have a lower ground-state energy. The existence of the k-vector k is prerequisite for the conduction since the k appears in the semiclassical equation of motion for the conduction electron (wave packet). The tetragonal (VO2)3 unit is periodic along the crystal's x-, y-, and z-axes, and hence there is a three-dimensional k-vector. There is a one-dimensional k for a monoclinic crystal. We believe this difference in the dimensionality of the k-vector is the cause of the conductivity drop. Prefer Oral Session X Prefer .

  4. Magnetic field induced lattice effects in a quasi-two-dimensional organic conductor close to the Mott metal-insulator transition

    NASA Astrophysics Data System (ADS)

    de Souza, Mariano; Brühl, Andreas; Strack, Christian; Schweitzer, Dieter; Lang, Michael

    2012-08-01

    We present ultra-high-resolution dilatometric studies in magnetic fields on a quasi-two-dimensional organic conductor κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br, which is located close to the Mott metal-insulator (MI) transition. The obtained thermal expansion coefficient, α(T), reveals two remarkable features: (i) the Mott MI transition temperature TMI=(13.6±0.6) K is insensitive to fields up to 10 T, the highest applied field; (ii) for fields along the interlayer b axis, a magnetic field induced (FI) phase transition at TFI=(9.5±0.5) K is observed above a threshold field Hc˜1 T, indicative of a spin reorientation with strong magnetoelastic coupling.

  5. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    NASA Astrophysics Data System (ADS)

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-11-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system.

  6. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    PubMed Central

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  7. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.

    PubMed

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Tok, Eng Soon; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  8. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition. PMID:26618885

  9. Metal-insulator transition in films of doped semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Chen, Ting; Reich, K. V.; Kramer, Nicolaas J.; Fu, Han; Kortshagen, Uwe R.; Shklovskii, B. I.

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  10. Metal-insulator transition near a superconducting state

    NASA Astrophysics Data System (ADS)

    Kaveh, M.; Mott, N. F.

    1992-03-01

    We show that when the metal-insulation transition occurs near a superconducting state it results in a different critical behavior from that of amorphous metals or uncompensated doped semiconductors. This difference results from the enhancement of the effective electron-electron interaction caused by fluctuations to the superconducting state. This explains the recent experiments of Micklitz and co-workers on amorphous superconducting mixtures Ga-Ar and Bi-Kr.

  11. The metal-insulator transition in magnetite.

    NASA Technical Reports Server (NTRS)

    Cullen, J. R.; Callen, E.

    1972-01-01

    We describe an electronic model for the low temperature transition in magnetite, in which the average number of electrons on a site is non-integral. The solution of the one-dimensional problem is reviewed, and the connection of the model with the Verwey ordering is discussed. Some of the implication of the three dimensional problem are discussed.

  12. Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.

    PubMed

    Shekhawat, Ashivni; Papanikolaou, Stefanos; Zapperi, Stefano; Sethna, James P

    2011-12-30

    Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones. PMID:22243320

  13. Strain-induced metal-insulator transition in t2 g electron system of perovskite titanate S m0.5C a0.5Ti O3 films

    NASA Astrophysics Data System (ADS)

    Yoshimatsu, K.; Okabe, H.; Oshima, T.; Ueda, S.; Ohtomo, A.

    2016-05-01

    We have demonstrated a strain-induced metal-insulator transition for weak Jahn-Teller effects in a t2 g electron system of S m0.5C a0.5Ti O3 , which has metallic ground states in the bulk. A clear variation of electronic properties in S m0.5C a0.5Ti O3 thin films was investigated as a function of epitaxial stain by changing a substrate and the film thickness. Under strong biaxial tensile strain, metallic behaviors were completely eliminated, as evidenced by the temperature dependence of resistivity. The observed metal-insulator transition was consistent with the behavior of the Ti 3 d density of states at the Fermi level seen in valence band hard x-ray photoemission spectra.

  14. Anderson localization effects near the Mott metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Bragança, Helena; Aguiar, M. C. O.; Vučičević, J.; Tanasković, D.; Dobrosavljević, V.

    2015-09-01

    The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean-field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar to that in the clean case. However, as we increase disorder, Anderson localization effects are responsible for shrinking the coexistence region, and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature Tc abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.

  15. Anderson metal-insulator transitions with classical magnetic impurities

    NASA Astrophysics Data System (ADS)

    Jung, Daniel; Kettemann, Stefan; Slevin, Keith

    2016-04-01

    We study numerically the effects of classical magnetic impurities on the Anderson metal-insulator transition. We find that a small concentration of Heisenberg impurities enhances the critical disorder amplitude Wc with increasing exchange coupling strength J . The resulting scaling with J is analyzed which supports an anomalous scaling prediction by Wegner due to the combined breaking of time-reversal and spin-rotational symmetry. Moreover, we find that the presence of magnetic impurities lowers the critical correlation length exponent ν and enhances the multifractality parameter α0. The new value of ν improves the agreement with the value measured in experiments on the metal-insulator transition (MIT) in doped semiconductors like phosphor-doped silicon, where a finite density of magnetic moments is known to exist in the vicinity of the MIT. The results are obtained by a finite-size scaling analysis of the geometric mean of the local density of states which is calculated by means of the kernel polynomial method. We establish this combination of numerical techniques as a method to obtain critical properties of disordered systems quantitatively.

  16. In-plane magnetic-field-induced metal-insulator transition in (311)A GaAs two-dimensional hole systems probed by thermopower

    NASA Astrophysics Data System (ADS)

    Faniel, S.; Moldovan, L.; Vlad, A.; Tutuc, E.; Bishop, N.; Melinte, S.; Shayegan, M.; Bayot, V.

    2007-10-01

    We report thermopower measurements in dilute (311)A GaAs two-dimensional holes subjected to an in-plane magnetic field B that drives the system through a metal-insulator transition (MIT). The diffusion thermopower Sd decreases linearly with temperature at low B for both low-mobility [011¯] and high-mobility [2¯33] directions, as expected for metallic systems. At high B , in the insulating phase, Sd changes sign along [011¯] , while Sd drops to zero along [2¯33] . This behavior suggests that the system does not undergo any ground-state modification but, rather, that the apparent MIT transition is accompanied by a dramatic change in the dominant scattering mechanisms.

  17. Metal-insulator and charge ordering transitions in oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Singh, Sujay Kumar

    Strongly correlated oxides are a class of materials wherein interplay of various degrees of freedom results in novel electronic and magnetic phenomena. Vanadium oxides are widely studied correlated materials that exhibit metal-insulator transitions (MIT) in a wide temperature range from 70 K to 380 K. In this Thesis, results from electrical transport measurements on vanadium dioxide (VO2) and vanadium oxide bronze (MxV 2O5) (where M: alkali, alkaline earth, and transition metal cations) are presented and discussed. Although the MIT in VO2 has been studied for more than 50 years, the microscopic origin of the transition is still debated since a slew of external parameters such as light, voltage, and strain are found to significantly alter the transition. Furthermore, recent works on electrically driven switching in VO2 have shown that the role of Joule heating to be a major cause as opposed to electric field. We explore the mechanisms behind the electrically driven switching in single crystalline nanobeams of VO2 through DC and AC transport measurements. The harmonic analysis of the AC measurement data shows that non-uniform Joule heating causes electronic inhomogeneities to develop within the nanobeam and is responsible for driving the transition in VO2. Surprisingly, field assisted emission mechanisms such as Poole-Frenkel effect is found to be absent and the role of percolation is also identified in the electrically driven transition. This Thesis also provides a new insight into the mechanisms behind the electrolyte gating induced resistance modulation and the suppression of MIT in VO2. We show that the metallic phase of VO2 induced by electrolyte gating is due to an electrochemical process and can be both reversible and irreversible under different conditions. The kinetics of the redox processes increase with temperature; a complete suppression of the transition and the stabilization of the metallic phase are achievable by gating in the rutile metallic phase

  18. Electrocaloric effect of metal-insulator transition in VO{sub 2}

    SciTech Connect

    Matsunami, Daichi; Fujita, Asaya

    2015-01-26

    The electrocaloric effect was observed in association with an electric-field induced metal-insulator transition in VO{sub 2} using a calorimetric measurement under an applied voltage. For a VO{sub 2} plate with a 0.4 mm thickness located in the center of a capacitor-like structure, the metal-insulator transition was manipulated by applying a few volts. The occurrence of a transition in such a thick sample with relatively low voltage indicates that a surface charge accumulation mechanism is effective. The isothermal entropy change reached 94 J kg{sup −1} K{sup −1}, while the adiabatic temperature change was calculated as −3.8 K under a voltage change of 0–3 V. The large entropy change is attributed to correlation of the complex freedom among spin, charge, and lattice.

  19. The metal-insulator transition in vanadium dioxide nanobeams

    NASA Astrophysics Data System (ADS)

    Cobden, David

    2009-05-01

    Solid materials in which electron-electron correlations are strong can exhibit dramatic phase transitions, at which an abrupt change in the electronic properties occurs with a small accompanying distortion of the lattice. Such transitions could be harnessed to make electronic or optoelectronic devices or sensors embodying different principles from those in present semiconductor technology. A famous example is the metal-insulator transition in vanadium dioxide which occurs at 67 ^oC at ambient pressure. VO2 is a stable, strong material with a simple structure. Unfortunately though, applications and methodical studies of this and other phase transitions are hindered by broadening, hysteresis and mechanical degradation at the transition, caused by the inevitable domain structure. Nanostructures of the material which are smaller than the characteristic domain size do not show these problems. Using devices made from nanobeams of VO2 we have been able to achieve good control of the transition and to determine a number of its properties for the first time. For instance, we find that the metallic phase can be supercooled by more than 50 ^oC; that the resistivity of the insulator in coexistence with the metal is independent of temperature; and that the transition occurs via the intermediate M2 phase. We also study nanoelectromechanical effects where reversible buckling of the nanobeam is coupled to the phase transition, and we investigate methods of controlling the phase transition, for example using a gate voltage.

  20. Second critical point in first order metal-insulator transitions.

    PubMed

    Kostadinov, Ivan Z; Patton, Bruce R

    2008-11-28

    For first order metal-insulator transitions we show that, together with the dc conductance zero, there is a second critical point where the dielectric constant becomes zero and further turns negative. At this point the metallic reflectivity sharply increases. The two points can be separated by a phase separation state in a 3D disordered system but may tend to merge in 2D. For illustration we evaluate the dielectric function in a simple effective medium approximation and show that at the second point it turns negative. We reproduce the experimental data on a typical Mott insulator such as MnO, demonstrating the presence of the two points clearly. We discuss other experiments for studies of the phase separation state and a similar phase separation in superconductors with insulating inclusions. PMID:19113498

  1. Chiral phase transition in lattice QCD as a metal-insulator transition

    SciTech Connect

    Garcia-Garcia, Antonio M.; Osborn, James C.

    2007-02-01

    We investigate the lattice QCD Dirac operator with staggered fermions at temperatures around the chiral phase transition. We present evidence of a metal-insulator transition in the low lying modes of the Dirac operator around the same temperature as the chiral phase transition. This strongly suggests the phenomenon of Anderson localization drives the QCD vacuum to the chirally symmetric phase in a way similar to a metal-insulator transition in a disordered conductor. We also discuss how Anderson localization affects the usual phenomenological treatment of phase transitions a la Ginzburg-Landau.

  2. Metal insulator transitions in perovskite SrIrO{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Jeong, Yoon Hee; Kim, Ki-Seok

    2014-12-07

    Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO{sub 3} thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO{sub 3} (110), DyScO{sub 3} (110), SrTiO{sub 3} (001), and NdGaO{sub 3} (110) with increasing lattice mismatch, in order to carry out a systematic study on the transport properties. We found that metal insulator transitions can be induced in this system; by either reducing thickness (on best lattice matched substrate) or changing degree of lattice strain (by lattice mismatch between film and substrates) of films. Surprisingly these two pathways seek two distinct types of metal insulator transitions; the former falls into disorder driven Anderson type whereas the latter turns out to be of unconventional Mott-Anderson type with the interplay of disorder and correlation. More interestingly, in the metallic phases of SrIrO{sub 3}, unusual non-Fermi liquid characteristics emerge in resistivity as Δρ ∝ T{sup ε} with ε evolving from 4/5 to 1 to 3/2 with increasing lattice strain. We discuss theoretical implications of these phenomena to shed light on the metal insulator transitions.

  3. Quantum capacitance in thin film vanadium dioxide metal insulator transition

    NASA Astrophysics Data System (ADS)

    Wu, Zhe; Knighton, Talbot; Tarquini, Vinicio; Torres, David; Wang, Tongyu; Sepulveda, Nelson; Huang, Jian

    We present capacitance measurements of the electronic density of states performed in high quality vanadium dioxide (VO2) thin films on sapphire (Al2O3) substrate. These films show the expected metal insulator transition near 60 °C with resistivity changing by 3 orders of magnitude with a hysteresis of 10 °C. To make a capacitive probe, a gate is suspended above the film surface using a flip-chip method with microfabricated supports. The geometric capacitance per-area reached is 40 pF/mm2. Such a large capacitance can be significantly modified by electron interaction and band charging/discharging which appear as an extra term known as the quantum capacitance (Cq). An AC signal applied to the gate allows measurement of the changing density of states (DOS) across the MIT. The DOS abruptly increases as the sample is heated through the transition point. Conversely the low temperature drop of d μ / d n is consistent with an energy gap opening in the insulating phase. These parameters shed light on the transition mechanism. NSF DMR-1105183, NSF ECCS 1306311.

  4. Correlation-induced metal-insulator transitions in d0 magnetic superlattices based on alkaline-earth monoxides: Insights from ab initio calculations

    NASA Astrophysics Data System (ADS)

    Lu, Yi-Lin; Dong, Shengjie; Zhou, Baozeng; Zhao, Hui; Wu, Ping

    2015-06-01

    Using first-principles density functional theory calculations, we have investigated the electronic structure and magnetic properties of four superlattices (MO)1/(MX)1 (001) (M=Ca and Sr; X=N and C). Our results show that compared with standard GGA approach, the GGA plus effective Ueff scheme can correct electronic structure and magnetic properties in some extent. With enhancing electronic correlation, for (CaO)1/(CaN)1, (SrO)1/(SrN)1, and (SrO)1/(SrC)1, the bands across Fermi level are divided into two parts and the shape of isotropic spherical spin atmosphere becomes anisotropic dumbbell-like with specific orientation, accompanying metal-insulator transitions. For (CaO)1/(CaC)1, the states just smearing with the Fermi level shift to lower energy region below Fermi level, indicating the transformation from a nearly half metal to an actual half metal occurs. The different behavior of (CaO)1/(CaC)1 compared with three other compounds may be caused by the larger ionization energy of calcium than that of strontium and the smaller electronegativity of carbon than that of nitrogen.

  5. Anderson metal-insulator transitions with classical magnetic impurities

    SciTech Connect

    Jung, Daniel; Kettemann, Stefan

    2014-08-20

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude W{sub c}, in the presence of Heisenberg impurities, W{sub c} is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  6. Anderson metal-insulator transitions with classical magnetic impurities

    NASA Astrophysics Data System (ADS)

    Jung, Daniel; Kettemann, Stefan

    2014-08-01

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude Wc, in the presence of Heisenberg impurities, Wc is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  7. Metal-insulator transition in low dimensional La{sub 0.75}Sr{sub 0.25}VO{sub 3} thin films

    SciTech Connect

    Dao, Tran M.; Mondal, Partha S.; Takamura, Y.; Arenholz, E.; Lee, Jaichan

    2011-06-15

    We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La{sub 0.75}Sr{sub 0.25}VO{sub 3} films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electronelectron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

  8. Metal-insulator transitions in IZO, IGZO, and ITZO films

    SciTech Connect

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  9. DC current induced metal-insulator transition in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3}/LaAlO{sub 3} thin film

    SciTech Connect

    Huang, Haoliang; Luo, Zhenlin Yang, Yuanjun; Yang, Mengmeng; Wang, Haibo; Hu, Sixia; Bao, Jun; Yun, Yu; Meng, Dechao; Lu, Yalin; Gao, Chen

    2014-05-15

    The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3} (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO{sub 3} substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The T{sub MI} of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 10{sup 9} A•m{sup −2} to 4.9 × 10{sup 9} A•m{sup −2}. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

  10. Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

    NASA Astrophysics Data System (ADS)

    Bhobe, P. A.; Kumar, A.; Taguchi, M.; Eguchi, R.; Matsunami, M.; Takata, Y.; Nandy, A. K.; Mahadevan, P.; Sarma, D. D.; Neroni, A.; Şaşıoǧlu, E.; Ležaić, M.; Oura, M.; Senba, Y.; Ohashi, H.; Ishizaka, K.; Okawa, M.; Shin, S.; Tamasaku, K.; Kohmura, Y.; Yabashi, M.; Ishikawa, T.; Hasegawa, K.; Isobe, M.; Ueda, Y.; Chainani, A.

    2015-10-01

    Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K2Cr8O16 , which exhibits a temperature-dependent (T -dependent) paramagnetic-to-ferromagnetic-metal transition at TC=180 K and transforms into a ferromagnetic insulator below TMI=95 K . We observe clear T -dependent dynamic valence (charge) fluctuations from above TC to TMI , which effectively get pinned to an average nominal valence of Cr+3.75 (Cr4 +∶Cr3 + states in a 3 ∶1 ratio) in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T -dependent BCS-type energy gap, with 2 G (0 )˜3.5 (kBTMI)˜35 meV . First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U ˜4 eV , establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d -electrons/Cr ) and the half-metallic ferromagnetism in the t2 g up-spin band favor a low-energy Peierls metal-insulator transition.

  11. Mesoscopic Metal-Insulator Transition at Ferroelastic Domain Walls in VO2

    SciTech Connect

    Jones, Keith M; Kalinin, Sergei V; Kolmakov, Andrei; Luk'yanchuk, Prof. Igor A.; Meunier, Vincent; Proksch, Roger; Shelton Jr, William Allison; Strelcov, Evgheni; Tselev, Alexander

    2010-01-01

    The novel phenomena induced by symmetry breaking at homointerfaces between ferroic variants in ferroelectric and ferroelastic materials have attracted recently much attention. Using variable temperature scanning microwave microscopy, we demonstrate the mesoscopic strain-induced metal-insulator phase transitions in the vicinity of ferroelastic domain walls in the semiconductive VO2 that nucleated at temperatures as much as 10-12 C below bulk transition, resulting in the formation of conductive channels in the material. Density functional theory is used to rationalize the process low activation energy. This behavior, linked to the strain inhomogeneity inherent in ferroelastic materials, can strongly affect interpretation of phase-transition studies in VO2 and similar materials with symmetry-lowering transitions, and can also be used to enable new generations of electronic devices though strain engineering of conductive and semiconductive regions.

  12. Metal-insulator transition in trans-polyacetylene

    NASA Astrophysics Data System (ADS)

    Conwell, E. M.; Mizes, H. A.; Jeyadev, S.

    1989-07-01

    We have calculated the band structure for a chain of doped trans-polyacetylene using the electronic part of the Su-Schrieffer-Heeger Hamiltonian plus the Coulomb potential arising from ions and charged solitons surrounding the chain. The lattice structure used was that determined by x rays for Na-doped polyacetylene. To agree with a number of experimental observations the donated electrons were taken to be in soliton states at all dopant concentrations. In obtaining the potential of a point charge on a chain in the metallic state, the confinement of the free electrons to a chain was taken into account. Because screening depends on the calculated energy levels, specifically on the density of states at the Fermi energy, η(EF), in the metallic state, which, in turn, depend on the potential used to obtain them, self-consistency was required in the calculations. The energy-level structure was found to depend strongly on the ion spacing, conveniently measured in terms of the average spacing a of C-H's along the chain. For ion spacing 5a, characteristic of the Na-ion-rich regions up to an average dopant concentration of ~6%, the chain remained semiconducting. For ion spacing 4a, which appears to characterize the next phase for Na doping, metallic behavior was found for a doped chain length of ~100 sites or more. Self-consistency was fulfilled with η(EF) equal to the value obtained from the saturation spin susceptibility in the metallic state. In addition to sufficiently long chains that the level spacing is comparable to kT, the metal-insulator transition is found to require considerable overlap of electron wave functions on adjacent solitons and a fairly deep potential well. The transition is best described as a Mott transition. Our model predicts that a sample in the metallic state at room temperature becomes semiconducting at lower temperature. Evidence for this is found in the temperature variation of the spin susceptibility and of ESR linewidth. It is argued that

  13. Controlling the metal insulator transition using the ferroelectric field effect in rare earth nickelates

    NASA Astrophysics Data System (ADS)

    Marshall, Matthew; Disa, Ankit; Kumah, Divine; Chen, Hanghui; Ismail-Beigi, Sohrab; Walker, Fred; Ahn, Charles

    2013-03-01

    A ferroelectric field effect transistor (FE-FET) modulates conductivity in a non-volatile manner by electrostatically accumulating and depleting charge carriers at the interface between a conducting channel and ferroelectric gate. The rare earth nickelate LaNiO3 is metallic in bulk, while other rare earth nickelates, such as NdNiO3, exhibit metal-insulator transitions and anti-ferromagnetic behavior in the bulk. Here, we show that by coupling the ferroelectric polarization of Pb0.8Zr0.2TiO3 (PZT) to the carriers in a nickelate, we can dynamically induce a metal- insulator transition in ultra-thin films of LaNiO3, and induce large changes in the MIT transition temperature in NdNiO3. Density functional theory is used to determine changes in the physical and electronic Ni-O-Ni bond angle of the nickelate at the interface between PZT and LaNiO3. The effect of the ferroelectric polarization is to decrease the Ni-O-Ni bond angle from 180 degrees and increase the carrier effective mass. Related to this change in electronic structure, we observe a change in resistivity of approximately 80% at room temperature for an ultra-thin 3 unit cell thick film of LaNiO3. Work supported by FENA and the NSF under MRSEC DMR 1119826.

  14. Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott and band insulators

    NASA Astrophysics Data System (ADS)

    Omori, Yukiko; Rüegg, Andreas; Sigrist, Manfred

    2014-10-01

    Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott and a band insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both on-site and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.

  15. Metal-insulator transitions of bulk and domain-wall states in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, Kentaro

    A family of pyrochlore iridates R2Ir2O7 offers an ideal platform to explore intriguing phases such as topological Mott insulator and Weyl semimetal. Here we report transport and spectroscopic studies on the metal-insulator transition (MIT) induced by the modulations of effective electron correlation and magnetic structures, which is finely tuned by external pressure, chemical substitutions (R = Nd1-x Prx and SmyNd1-y) , and magnetic field. A reentrant insulator-metal-insulator transition is observed near the paramagnetic insulator-metal phase boundary reminiscent of a first-order Mott transition for R = SmyNd1-y compounds (y~0.8). The metallic states on the magnetic domain walls (DWs), which are observed for R = Nd in real space as well as in transport properties, is simultaneously turned into the insulating one. These findings imply that the DW electronic state is intimately linked to the bulk states. For the mixed R = Nd1-x Prx compounds, the divergent behavior of resistivity with antiferromagnetic order is significantly suppressed by applying a magnetic field along [001] direction. It is attributed to the phase transition from the antiferromagnetic insulating state to the novel Weyl (semi-)metal state accompanied by the change of magnetic structure. The present study combined with experiment and theory suggests that there are abundant exotic phases with physical parameters such as electron correlation and Ir-5 d magnetic order pattern. Work performed in collaboration with J. Fujioka, B.-J. Yang, C. Terakura, N. Nagaosa, Y. Tokura (University of Tokyo, RIKEN CEMS), J. Shiogai, A. Tsukazaki, S. Nakamura, S. Awaji (Tohoku University). 1This work was supported by JSPS FIRST Program and Grant-in-Aid for Scientific Research (Grants No. 80609488 and No. 24224009).

  16. Metal-insulator transition in SrTi1-xVxO3 thin films

    NASA Astrophysics Data System (ADS)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-11-01

    Epitaxial SrTi1-xVxO3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  17. Enhanced ferromagnetic and metal insulator transition in Sm0.55Sr0.45MnO3 thin films: Role of oxygen vacancy induced quenched disorder

    NASA Astrophysics Data System (ADS)

    Srivastava, M. K.; Siwach, P. K.; Kaur, A.; Singh, H. K.

    2010-11-01

    Effect of quenched disorder (QD) caused by oxygen vacancy (OV) and substrate induced inhomogeneous compressive strain, on the magnetic and transport properties of oriented polycrystalline Sm0.55Sr0.45MnO3 thin films is investigated. QD is related intimately to the ordering/disordering of the OVs and controls the paramagnetic-ferromagnetic/insulator-metal transition. OV ordered films show enhanced TC/TIM˜165 K, which is depressed by oxygen annealing. OV disordering realized by quenching reduces TC/TIM. The first order IM transition observed in SSMO single crystals is transformed into nonhysteretic and continuous one in the OV ordered films. QD appears to be diluted by OV disorder/annihilation and results in stronger carrier localization.

  18. Pure electronic metal-insulator transition at the interface of complex oxides

    PubMed Central

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  19. Pure electronic metal-insulator transition at the interface of complex oxides.

    PubMed

    Meyers, D; Liu, Jian; Freeland, J W; Middey, S; Kareev, M; Kwon, Jihwan; Zuo, J M; Chuang, Yi-De; Kim, J W; Ryan, P J; Chakhalian, J

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  20. Pure electronic metal-insulator transition at the interface of complex oxides

    NASA Astrophysics Data System (ADS)

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-06-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

  1. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    PubMed Central

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-01-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system. PMID:26860789

  2. Selective electrochemical reactivity of rutile VO2 towards the suppression of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Singh, Sujay; Abtew, Tesfaye A.; Horrocks, Gregory; Kilcoyne, Colin; Marley, Peter M.; Stabile, Adam A.; Banerjee, Sarbajit; Zhang, Peihong; Sambandamurthy, G.

    2016-03-01

    We demonstrate through electrolyte gating measurements of a single nanobeam that the rultile phase of VO2 is electrochemically more reactive than the monoclinic phase. Our results show that the complete suppression of the metal-insulator transition and stabilization of the metallic phase is possible when gate voltage is applied in the rutile metallic phase. The results are discussed based on the formation of oxygen vacancies wherein accommodation of a high concentration of vacancies in the rutile phase selectively stabilizes it by disrupting dimerization of adjacent V-V pairs required for a transition to the monoclinic phase. The creation of oxygen vacancies is proposed to proceed through the oxidation of the electrolyte. Raman spectroscopy data suggest surface metallization upon electrolyte gating with an initial coexistence of insulating monoclinic and metallic domains. The selective electrochemical reactivity of the rutile phase and the resulting defect-induced stabilization of this phase across a vastly expanded temperature window suggest a facile defect engineering route to tune electronic phase transitions.

  3. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-02-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system.

  4. Buckley Prize Talk: The Suprerconductor-(Metal)-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kapitulnik, Aharon

    2015-03-01

    While the classical theory of phase transitions has been extraordinarily successful, there are several reasons to exercise caution when applying this approach to the zero temperature superconducting transition. First, experimental identification of the relevant phases requires extrapolation to zero temperature, which becomes complicated, especially when one needs to identify sources of dissipation. In addition, since superconductivity may be highly inhomogeneous as appreciable superconducting order parameter may be concentrated in ``superconducting puddles'' due to disorder and/or spontaneous phase separation, the nature of the quantum phase transition to a superconducting state may be highly anomalous, where the system attempts to optimizes the formation of puddles with the Josephson coupling among them to obtain global superconductivity. In this talk we will review some of the consequences of these considerations, emphasizing the possible emergence of anomalous metallic phases close to the superconductor-insulator transition.

  5. Metal-insulator transition in Na{sub x}WO{sub 3}: Photoemission spectromicroscopy study

    SciTech Connect

    Paul, Sanhita Ghosh, Anirudha Raj, Satyabrata

    2014-04-24

    We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, Na{sub x}WO{sub 3} by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of Na{sub x}WO{sub 3} reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in Na{sub x}WO{sub 3}.

  6. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    NASA Astrophysics Data System (ADS)

    Menges, F.; Dittberner, M.; Novotny, L.; Passarello, D.; Parkin, S. S. P.; Spieser, M.; Riel, H.; Gotsmann, B.

    2016-04-01

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  7. Disorder and Metal-Insulator Transitions in Weyl Semimetals.

    PubMed

    Chen, Chui-Zhen; Song, Juntao; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X C

    2015-12-11

    The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has Weyl nodes in bulk excitations and Fermi arc surface states. We study the effects of disorder and localization in WSMs and find three novel phase transitions. (i) Two Weyl nodes near the Brillouin zone boundary can be annihilated pairwise by disorder scattering, resulting in the opening of a topologically nontrivial gap and a transition from a WSM to a three-dimensional quantum anomalous Hall state. (ii) When the two Weyl nodes are well separated in momentum space, the emergent bulk extended states can give rise to a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (iii) Two Weyl nodes can emerge near the zone center when an insulating gap closes with increasing disorder, enabling a direct transition from a normal band insulator to a WSM. We determine the phase diagram by numerically computing the localization length and the Hall conductivity, and propose that the novel phase transitions can be realized on a photonic lattice. PMID:26705648

  8. ARPES studies on metal-insulator-transition in NiS2-xSex

    NASA Astrophysics Data System (ADS)

    Han, Garam; Kim, Y. K.; Kyung, W. S.; Kim, Chul; Koh, Y. Y.; Lee, K. D.; Kim, C.

    2012-02-01

    Understanding Metal insulator transition (MIT) is one of the most challenging issues in condensed matter physics. NiS2-xSex (NSS) is a well known system for band width controlled MIT studies while most of High-Tc superconductors (HTSCs) are described within band filling MIT picture. Cubic pyrite NiS2 is known as a charge-transfer (CT) insulator and easily forms a solid solution with NiSe2, which is a good metal even though it is isostrucural and isoelectronic to NiS2. MIT is induced by Se alloying and is observed at a low temperature for x=0.5. The important merit is that there is no structure transition which often accompanies MIT. In spite of the importance of the system, even the experimental band dispersion is not known so far along with many controversies. For this reason, we performed angle resolved photoemission spectroscopy on high quality single crystals and successfully obtained Fermi surface maps of x=0.5, x=0.7 and x=0.8 systems (the metallic side). By doping dependent systematic studies on NSS and comparison with LDA calculation, we try to explain the relationship between band width and the MIT.

  9. Percolative metal-insulator transition in LaMnO3

    NASA Astrophysics Data System (ADS)

    Sherafati, M.; Baldini, M.; Malavasi, L.; Satpathy, S.

    2016-01-01

    We show that the pressure-induced metal-insulator transition (MIT) in LaMnO3 is fundamentally different from the Mott-Hubbard transition and is percolative in nature, with the measured resistivity obeying the percolation scaling laws. Using the Gutzwiller method to treat correlation effects in a model Hamiltonian that includes both Coulomb and Jahn-Teller interactions, we show, one, that the MIT is driven by a competition between electronic correlation and the electron-lattice interaction, an issue that has been long debated, and two, that with compressed volume, the system has a tendency towards phase separation into insulating and metallic regions, consisting, respectively, of Jahn-Teller distorted and undistorted octahedra. This tendency manifests itself in a mixed phase of intermixed insulating and metallic regions in the experiment. Conduction in the mixed phase occurs by percolation and the MIT occurs when the metallic volume fraction, steadily increasing with pressure, exceeds the percolation threshold vc≈0.29 . Measured high-pressure resistivity follows the percolation scaling laws quite well, and the temperature dependence follows the Efros-Shklovskii variable-range hopping behavior for granular materials.

  10. Unraveling metal-insulator transition mechanism of VO₂ triggered by tungsten doping.

    PubMed

    Tan, Xiaogang; Yao, Tao; Long, Ran; Sun, Zhihu; Feng, Yajuan; Cheng, Hao; Yuan, Xun; Zhang, Wenqing; Liu, Qinghua; Wu, Changzheng; Xie, Yi; Wei, Shiqiang

    2012-01-01

    Understanding the mechanism of W-doping induced reduction of critical temperature (T(C)) for VO(2) metal-insulator transition (MIT) is crucial for both fundamental study and technological application. Here, using synchrotron radiation X-ray absorption spectroscopy combined with first-principles calculations, we unveil the atomic structure evolutions of W dopant and its role in tailoring the T(C) of VO(2) MIT. We find that the local structure around W atom is intrinsically symmetric with a tetragonal-like structure, exhibiting a concentration-dependent evolution involving the initial distortion, further repulsion, and final stabilization due to the strong interaction between doped W atoms and VO(2) lattices across the MIT. These results directly give the experimental evidence that the symmetric W core drives the detwisting of the nearby asymmetric monoclinic VO(2) lattice to form rutile-like VO(2) nuclei, and the propagations of these W-encampassed nuclei through the matrix lower the thermal energy barrier for phase transition. PMID:22737402

  11. Metal-insulator transition by holographic charge density waves.

    PubMed

    Ling, Yi; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu; Zhang, Hongbao

    2014-08-29

    We construct a gravity dual for charge density waves (CDWs) in which the translational symmetry along one spatial direction is spontaneously broken. Our linear perturbation calculation on the gravity side produces the frequency dependence of the optical conductivity, which exhibits the two familiar features of CDWs, namely, the pinned collective mode and gapped single-particle excitation. These two features indicate that our gravity dual also provides a new mechanism to implement the metal to insulator phase transition by CDWs, which is further confirmed by the fact that dc conductivity decreases with the decreased temperature below the critical temperature. PMID:25215974

  12. Control of plasmonic nanoantennas by reversible metal-insulator transition.

    PubMed

    Abate, Yohannes; Marvel, Robert E; Ziegler, Jed I; Gamage, Sampath; Javani, Mohammad H; Stockman, Mark I; Haglund, Richard F

    2015-01-01

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique features open up promising novel applications in active nanophotonics. PMID:26358623

  13. Control of plasmonic nanoantennas by reversible metal-insulator transition

    PubMed Central

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-01-01

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique features open up promising novel applications in active nanophotonics. PMID:26358623

  14. Metal-insulator transition in SrTi1-xVxO3 thin films

    NASA Astrophysics Data System (ADS)

    Gu, Man; Wolf, Stuart; Lu, Jiwei

    2014-03-01

    Epitaxial SrTi1-xVxO3 (0 <= x <= 1) thin films with thicknesses of ~ 16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for the film with x = 0.67. The films with higher vanadium concentration (x >0.67) were metallic, and the electrical resistivity followed the T2 law corresponding to a Fermi liquid system. In the insulating region of x <0.67, the temperature dependence of electrical resistivity for the x = 0.5 and 0.33 films can be scaled with Mott's variable range hopping model. The possible mechanism behind the observed MIT might be associated the interplay between electron-electron interactions and disorder-induced localization. The Ti4+ ion substitution introduces Anderson-localized states as well as lattice distortions that result in a reduction in the effective 3d bandwidth W. We gratefully acknowledge the financial support from the Army Research Office through MURI grant No. W911-NF-09-1-0398.

  15. Novel Electronic Behavior Driving NdNiO3 Metal-Insulator Transition.

    PubMed

    Upton, M H; Choi, Yongseong; Park, Hyowon; Liu, Jian; Meyers, D; Chakhalian, J; Middey, S; Kim, Jong-Woo; Ryan, Philip J

    2015-07-17

    We present evidence that the metal-insulator transition (MIT) in a tensile-strained NdNiO3 (NNO) film is facilitated by a redistribution of electronic density and that it neither requires Ni charge disproportionation nor a symmetry change [U. Staub et al., Phys. Rev. Lett. 88, 126402 (2002); R. Jaramillo et al., Nat. Phys. 10, 304 (2014)]. Given that epitaxial tensile strain in thin NNO films induces preferential occupancy of the e(g) d(x(2)-y(2)) orbital we propose that the larger transfer integral of this orbital state with the O 2p orbital state mediates a redistribution of electronic density from the Ni atom. A decrease in the Ni d(x(2)-y(2)) orbital occupation is directly observed by resonant inelastic x-ray scattering below the MIT temperature. Furthermore, an increase in the Nd charge occupancy is measured by x-ray absorption at the Nd L(3) edge. Both spin-orbit coupling and crystal field effects combine to break the degeneracy of the Nd 5d states, shifting the energy of the Nd e(g) d(x(2)-y(2)) orbit towards the Fermi level, allowing the A site to become an active acceptor during the MIT. This work identifies the relocation of electrons from the Ni 3d to the Nd 5d orbitals across the MIT. We propose that the insulating gap opens between the Ni 3d and O 2p states, resulting from Ni 3d electron localization. The transition seems to be neither a purely Mott-Hubbard transition nor a simple charge transfer. PMID:26230808

  16. Quantum-critical conductivity scaling for a metal-insulator transition

    PubMed

    Lee; Carini; Baxter; Henderson; Gruner

    2000-01-28

    Temperature (T)- and frequency (omega)-dependent conductivity measurements are reported here in amorphous niobium-silicon alloys with compositions (x) near the zero-temperature metal-insulator transition. There is a one-to-one correspondence between the frequency- and temperature-dependent conductivity on both sides of the critical concentration, thus establishing the quantum-critical nature of the transition. The analysis of the conductivity leads to a universal scaling function and establishes the critical exponents. This scaling can be described by an x-, T-, and omega-dependent characteristic length, the form of which is derived by experiment. PMID:10649993

  17. Light-induced resistive switching in silicon-based metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N.; Antonov, I. N.; Kasatkin, A. P.

    2016-05-01

    We have studied light-induced resistive switching in metal-insulator-semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.

  18. Tuning the metal-insulator transition temperature of Sm0.5Nd0.5NiO3 thin films via strain

    NASA Astrophysics Data System (ADS)

    Gardner, H. Jeffrey; Singh, Vijay; Zhang, Le; Hong, Xia

    2014-03-01

    We have investigated the effect of substrate induced strain and film thickness on the metal-insulator transition of the correlated oxide Sm0.5Nd0.5NiO3 (SNNO). We have fabricated epitaxial 3 - 40 nm thick SNNO films on (001) LaAlO3 (LAO), (001) SrTiO3 (STO), and (110) NdGaO3 (NGO) via off-axis RF magnetron sputtering. The SNNO films are atomically smooth with (001) orientation as determined by atomic force microscopy and x-ray diffraction. SNNO films grown on LAO, subject to compressive strain, exhibit a sharp metal-insulator transition at lower temperatures. Conversely, films grown on STO and NGO, subject to tensile strain, exhibit a smeared albeit above room temperature metal-insulator transition. For all substrates, we have observed that the metal-insulator transition temperature (TMI) increases monotonically with decreasing film thickness until the electrically dead layer is reached (below 4 nm). We discuss the effect of strain and oxygen deficiencies on the TMI of SNNO thin films.

  19. Origin of the metal-insulator transition of indium atom wires on Si(111)

    NASA Astrophysics Data System (ADS)

    Kim, Sun-Woo; Cho, Jun-Hyung

    2016-06-01

    As a prototypical one-dimensional electron system, self-assembled indium (In) nanowires on the Si(111) surface have been believed to drive a metal-insulator transition by a charge-density-wave (CDW) formation due to Fermi surface nesting. Here, our first-principles calculations demonstrate that the structural phase transition from the high-temperature 4 ×1 phase to the low-temperature 8 ×2 phase occurs through an exothermic reaction with the consecutive bond-breaking and bond-making processes, giving rise to an energy barrier between the two phases as well as a gap opening. This atomistic picture for the phase transition not only identifies its first-order nature but also solves a long-standing puzzle of the origin of the metal-insulator transition in terms of the ×2 periodic lattice reconstruction of In hexagons via bond breakage and new bond formation, not by the Peierls-instability-driven CDW formation.

  20. Cryogenic microwave imaging of metal-insulator transition in doped silicon

    NASA Astrophysics Data System (ADS)

    Kundhikanjana, Worasom; Lai, Keji; Kelly, Michael A.; Shen, Zhi-Xun

    2011-03-01

    We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases.

  1. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  2. The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

    SciTech Connect

    Bubel, Simon; Glaudell, Anne M.; Mates, Thomas E.; Chabinyc, Michael L.; Hauser, Adam J.; Stemmer, Susanne

    2015-03-23

    For physical studies of correlated electron systems and for realizing novel device concepts, electrostatic modulation of metal-insulator transitions (MITs) is desired. The inherently high charge densities needed to modulate MITs make this difficult to achieve. The high capacitance of ionic liquids are attractive but, voltages are needed that can be in excess of the electrochemical stability of the system. Here, we show temperature/resistivity data that suggest electrostatic modulation of the MIT temperature of NdNiO{sub 3} in a wide regime. However, additional voltammetric and x-ray photoelectron spectroscopy measurements demonstrate the electrochemical impact of the electrostatic doping approach with ionic liquids.

  3. Metal-Insulator Transition in the Hubbard Model: Correlations and Spiral Magnetic Structures

    NASA Astrophysics Data System (ADS)

    Timirgazin, Marat A.; Igoshev, Petr A.; Arzhnikov, Anatoly K.; Irkhin, Valentin Yu.

    2016-03-01

    The metal-insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the t-t^' Hubbard model at half-filling by using both the generalized for the case of spiral order Hartree-Fock approximation (HFA) and Kotliar-Ruckenstein slave-boson approach. It turns out that the magnetic scenario of MIT becomes superior over the non-magnetic one. The electron correlations lead to some suppression of the spiral phases in comparison with HFA. We found the presence of a metallic antiferromagnetic (spiral) phase in the case of three-dimensional lattices.

  4. Critical Slowing Down of the Charge Carrier Dynamics at the Mott Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Zielke, David; Polzin, Jana; Sasaki, Takahiko; Müller, Jens

    2015-05-01

    We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical end point, we observe a divergent increase of the resistance fluctuations accompanied by a drastic shift of spectral weight to low frequencies, demonstrating the critical slowing down of the order parameter (doublon density) fluctuations. The slow dynamics is accompanied by non-Gaussian fluctuations, indicative of correlated charge carrier dynamics. A possible explanation is a glassy freezing of the electronic system as a precursor of the Mott MIT.

  5. Metal-insulator transition in the Pr substituted Bi-2212 bulk textured crystals

    NASA Astrophysics Data System (ADS)

    Prabhakaran, D.; Subramanian, C.

    1997-02-01

    Bulk textured crystals of Bi 2.2Sr 1.9Ca 1- xPr xCu 2O 8 (0.0 ≤ x ≤ 0.6) were grown by the platinum strip heater floating zone technique. The effect of Pr on the growth and superconducting properties was studied. From the X-ray diffraction studies, variation of lattice constants, phase purity and texturing quantification with respect to Pr substitution were calculated. Variation in the Sr/Ca ratio upon Pr doping was observed. Metal insulator transition was observed in the higher order Pr substituted crystals.

  6. Dimensional-Crossover-Driven Metal-Insulator Transition in SrVO3 Ultrathin Films

    SciTech Connect

    Yoshimatsu, K; Okabe, K; Kumigashira, H; Okamoto, Satoshi; Aizaki, S; Fujimori, A; Oshima, M

    2010-01-01

    We have investigated the changes occurring in the electronic structure of digitally controlled SrVO3 ultrathin films across the dimensionality-controlled metal-insulator transition (MIT) by in situ photoemission spectroscopy. With decreasing film thickness, a pseudogap is formed at EF through spectral weight transfer from the coherent part to the incoherent part. The pseudogap finally evolves into an energy gap that is indicative of the MIT in a SrVO3 ultrathin film. The observed spectral behavior is reproduced by layer dynamical-mean-field-theory calculations, and it indicates that the observed MIT is caused by the reduction in the bandwidth due to the dimensional crossover.

  7. First-order metal-insulator transition not accompanied by the structural phase transition observed in VO2-based devices

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Tak; Chae, Byung-Gyu; Kim, Bong-Jun; Lee, Yong-Wook; Yun, Sun-Jin; Kang, Kwang-Yong

    2006-03-01

    An abrupt first-order metal-insulator transition (MIT) is observed during the application of a switching pulse voltage to VO2-based two-terminal devices. When the abrupt MIT occurs, the structural phase transition (SPT) is investigated by a micro- Raman spectroscopy and a micro-XRD. The result shows that the MIT is not accompanied with the structural phase transition (SPT); the abrupt MIT is prior to the SPT. Moreover, any switching pulse over a threshold voltage of 7.1 V for the MIT enabled the device material to transform efficiently from an insulator to a metal. The measured delay time from the source switching pulse to an induced MIT pulse is an order of 20 nsec which is much less than a delay time of about one msec deduced by thermal model. This indicates that the first-order MIT does not occur due to thermal. We think this MIT is the Mott transition. (Reference: New J. Phys. 6 (1994) 52 (www.njp.org), Appl. Phys. Lett. 86 (2005) 242101, Physica B 369 (2005. December) xxxx)

  8. Metal-insulator transition in NiS2-x Se x : chemical vs external pressure effects

    NASA Astrophysics Data System (ADS)

    Marini, C.; Valentini, M.; Perucchi, A.; Dore, P.; Sarma, D. D.; Lupi, S.; Postorino, P.

    2011-03-01

    The Se alloying (x)- and the pressure (P)-induced metal-insulator transitions on the strongly correlated NiS2-x Se x system have been investigated through Raman and infrared (IR) spectroscopies. Raman and IR responses of NiS2 to lattice compression are correlated to a metallization transition, occurring at ∼4 GPa. This result suggests a strong interaction between lattice and electronic degrees of freedom. In particular, IR measurements carried out by applying P on NiS2 (i.e. lattice contraction) and on Se alloying (i.e. lattice expansion) reveal that in both cases a metallic state is obtained. Our optical spectroscopy results deviate from the idea of a simple scaling factor between P and x previously claimed by transport measurements, but, on the contrary, point out the substantially different microscopic origin of the two transitions.

  9. Cooperative phonon effects in the metal-insulator transitions of manganite and nickelate perovskites

    NASA Astrophysics Data System (ADS)

    Brierley, Richard T.; Guzmán Verri, Gian G.; Littlewood, Peter B.

    Metal-insulator transitions in manganite and nickelate perovskites depend on the competition between the electron kinetic energy, which favors the metallic phase, and the electron-phonon coupling and Coulomb interaction, which favor localization. The size of the A-site cation controls the relative rotation of the octahedral structural units of the perovskite in the range of 0 - 15°. This is accompanied by changes in the metal-insulator transition temperature from 0 - 600K . This effect is commonly attributed to modification in the electron bandwidth from changes in orbital overlap. Although previous theoretical studies of these materials include the electron-phonon interaction, they typically do not consider cooperative phonon effects. Using a phenomenological model of the perovskite structure, we show that the long-range anisotropic forces arising from inter-site phonon interactions are modulated by changes in the octahedral rotation. We demonstrate using statistical mechanical calculations that these changes in the strain interaction can capture the variation in transition temperature with tolerance factor observed in both the manganites and nickelates.

  10. Moderate pressure synthesis of rare earth nickelate with metal-insulator transition using polymeric precursors

    NASA Astrophysics Data System (ADS)

    Napierala, C.; Lepoittevin, C.; Edely, M.; Sauques, L.; Giovanelli, F.; Laffez, P.; VanTedeloo, G.

    2010-07-01

    Rare earth nickelates exhibit a reversible metal-semiconductor phase transition that is, in the infrared range, responsible for a thermo-optical contrast. The state of the art synthesis of these compounds usually requires high oxygen pressure to stabilize Ni in the oxidation state 3 +. In this work, using polymeric precursor associated with moderate pressure annealing, we show that it is possible to obtain fully oxidized rare earth nickelate with metal-insulator transition. Using thermogravimetric analysis, X-ray diffraction and transmission electronic microscopy we compare different samples synthesized at different oxygen pressures and demonstrate their structural similarity. Thermo-optical properties were measured, in the infrared range, using reflectance measurements and confirmed the metal-insulator transition at 60 °C in both samples.TEM observations lead to the conclusion that the structure commonly obtained at 175 bar is perfectly observed in the 20 bar sample without major structural defects. The two samples exhibit a thermochromic behavior and thermo-optical properties of the two samples are equivalent.

  11. Correlation Between Metal-Insulator Transition Characteristics and Electronic Structure Changes in Vanadium Oxide Thin Films

    SciTech Connect

    Ruzmetov,D.; Senanayake, S.; Narayanamurti, V.; Ramanathan, S.

    2008-01-01

    We correlate electron transport data directly with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition. A set of vanadium oxide thin films were prepared by reactive dc sputtering from a V target at various oxygen partial pressures (O2 p.p.). Metal-insulator transition (MIT) characteristic to VO2 can be seen from the temperature dependence of electrical resistance of the films sputtered at optimal O2 p.p. Lower and higher O2 p.p. result in disappearance of the MIT. The results of the near edge x-ray absorption fine structure spectroscopy of the O K edge in identical VO films are presented. Redistribution of the spectral weight from {sigma}* to {pi}* bands is found in the vanadium oxide films exhibiting stronger VO2 MIT. This is taken as evidence of the strengthening of the metal-metal ion interaction with respect to the metal-ligand and indirect V-O-V interaction in vanadium oxide films featuring sharp MIT. We also observe a clear correlation between MIT and the width and area of the lower {pi}* band, which is likely to be due to the emergence of the d|| band overlapping with {pi}*. The strengthening of this d|| band near the Fermi level only in the vanadium oxide compounds displaying the MIT points out the importance of the role of the d|| band and electron correlations in the phase transition.

  12. Thermally driven analog of the Barkhausen effect at the metal-insulator transition in vanadium dioxide

    SciTech Connect

    Huber-Rodriguez, Benjamin; Ji, Heng; Chen, Chih-Wei; Kwang, Siu Yi; Hardy, Will J.; Morosan, Emilia; Natelson, Douglas

    2014-09-29

    The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO{sub 2} material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO{sub 2} powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.

  13. Thermal Conductivity and Thermopower near the 2D Metal-Insulator transition, Final Technical Report

    SciTech Connect

    SARACHIK, MYRIAM P

    2015-02-20

    STUDIES OF STRONGLY-INTERACTING 2D ELECTRON SYSTEMS – There is a great deal of current interest in the properties of systems in which the interaction between electrons (their potential energy) is large compared to their kinetic energy. We have investigated an apparent, unexpected metal-insulator transition inferred from the behavior of the temperature-dependence of the resistivity; moreover, detailed analysis of the behavior of the magnetoresistance suggests that the electrons’ effective mass diverges, supporting this scenario. Whether this is a true phase transition or crossover behavior has been strenuously debated over the past 20 years. Our measurements have now shown that the thermoelectric power of these 2D materials diverges at a finite density, providing clear evidence that this is, in fact, a phase transition to a new low-density phase which may be a precursor or a direct transition to the long sought-after electronic crystal predicted by Eugene Wigner in 1934.

  14. Redox chemistry and metal-insulator transitions intertwined in a nano-porous material

    NASA Astrophysics Data System (ADS)

    Maximoff, Sergey N.; Smit, Berend

    2014-06-01

    Metal-organic frameworks are nano-porous adsorbents of relevance to gas separation and catalysis, and separation of oxygen from air is essential to diverse industrial applications. The ferrous salt of 2,5-dihydroxy-terephthalic acid, a metal-organic framework of the MOF74 family, can selectively adsorb oxygen in a manner that defies the classical picture: adsorption sites either do or do not share electrons over a long range. Here we propose, and then justify phenomenologically and computationally, a mechanism. Charge-transfer-mediated adsorption of electron acceptor oxygen molecules in the metal-organic framework, which is a quasi-one-dimensional electron-donor semiconductor, drives and is driven by quasi-one-dimensional metal-insulator-metal transitions that localize or delocalize the quasi-one-dimensional electrons. This mechanism agrees with the empirical evidence, and predicts a class of nano-porous semiconductors or metals and potential adsorbents and catalysts in which chemistry and metal-insulator-metal transitions intertwine.

  15. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    SciTech Connect

    Lysenko, Sergiy Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph; Aparicio, Joaquin; Sepúlveda, Nelson

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  16. Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors

    SciTech Connect

    Sai, N.; Li, Z.Q.; Martin, M.C.; Basov, D.N.; Di Ventra, M.

    2006-11-07

    We carry out a comprehensive theoretical and experimentalstudy of charge injection in poly(3-hexylthiophene) (P3HT) to determinethe most likely scenario for metal-insulator transition in this system.Wecalculate the optical-absorption frequencies corresponding to a polaronand a bipolaron lattice in P3HT. We also analyze the electronicexcitations for three possible scenarios under which a first- or asecond-order metal-insulator transition can occur in doped P3HT. Thesetheoretical scenarios are compared with data from infrared absorptionspectroscopy on P3HT thin-film field-effect transistors (FETs). Ourmeasurements and theoretical predictions suggest that charge-inducedlocalized states in P3HT FETs are bipolarons and that the highest dopinglevel achieved in our experiments approaches that required for afirst-order metal-insulator transition.

  17. The Effect of Enhanced Spin-Orbit Scattering on the Superconducting - Nonsuperconducting Transition and the Metal-Insulator Transition in Granular Aluminum.

    NASA Astrophysics Data System (ADS)

    Miller, Theodore A.

    A small amount of bismuth was added to a set of granular aluminum samples to increase the spin-orbit scattering rate. This set is compared with a second set with no bismuth added. With the addition of bismuth, both the metal-insulator transition and the threshold for the presence of superconductivity were shifted a similar amount to higher values of resistivity. The shift of the metal-insulator transition can be explained as a result of the effect of increased spin -orbit scattering at an Anderson transiton. The fact that the superconducting threshold also shifts indicates that it is the proximity to the metal-insulator transition that depresses superconductivity.

  18. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    PubMed

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  19. Hybridization wave as the cause of the metal-insulator transition in rare earth nickelates

    NASA Astrophysics Data System (ADS)

    Park, Hyowon; Marianetti, Chris A.; Millis, Andrew J.

    2012-02-01

    The metal-insulator transition driven by varying rare earth (Re) ion in ReNiO3 has been a longstanding challenge to materials theory. Experimental evidence suggesting charge order is seemingly incompatible with the strong Mott-Hubbard correlations characteristic of transition metals. We present density functional, Hartree-Fock and Dynamical Mean field calculations showing that the origin of the insulating phase is a hybridization wave, in which a two sublattice ordering of the oxygen breathing mode produces two Ni sites with almost identical Ni d-charge densities but very different magnetic moments and other properties. The high temperature crystal structure associated with smaller Re ions such as Lu is shown to be more susceptible to the distortion than the high temperature structure associated with larger Re ions such as La.

  20. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    PubMed Central

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  1. Low-energy description of the metal-insulator transition in the rare-earth nickelates

    NASA Astrophysics Data System (ADS)

    Subedi, Alaska; Peil, Oleg E.; Georges, Antoine

    2015-02-01

    We propose a simple theoretical description of the metal-insulator transition of rare-earth nickelates. The theory involves only two orbitals per nickel site, corresponding to the low-energy antibonding eg states. In the monoclinic insulating state, bond-length disproportionation splits the manifold of eg bands, corresponding to a modulation of the effective on-site energy. We show that, when subject to a local Coulomb repulsion U and Hund's coupling J , the resulting bond-disproportionated state is a paramagnetic insulator for a wide range of interaction parameters. Furthermore, we find that when U -3 J is small or negative, a spontaneous instability to bond disproportionation takes place for large enough J . This minimal theory emphasizes that a small or negative charge-transfer energy, a large Hund's coupling, and a strong coupling to bond disproportionation are the key factors underlying the transition. Experimental consequences of this theoretical picture are discussed.

  2. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    NASA Astrophysics Data System (ADS)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  3. Role of magnetic and orbital ordering at the metal-insulator transition in NdNiO{sub 3}

    SciTech Connect

    Scagnoli, V.; Staub, U.; Mulders, A. M.; Janousch, M.; Meijer, G. I.; Hammerl, G.; Tonnerre, J. M.; Stojic, N.

    2006-03-01

    Soft x-ray resonant scattering at the Ni L{sub 2,3} edges is used to test models of magnetic- and orbital-ordering below the metal-insulator transition in NdNiO{sub 3}. The large branching ratio of the L{sub 3} to L{sub 2} intensities of the (1/2 0 1/2) reflection and the observed azimuthal angle and polarization dependence originates from a noncollinear magnetic structure. The absence of an orbital signal and the noncollinear magnetic structure show that the nickelates are materials for which orbital ordering is absent at the metal-insulator transition.

  4. Tuning directional dependent metal-insulator transitions in quasi-1D quantum wires with spin-orbit density wave instability.

    PubMed

    Das, Tanmoy

    2016-07-27

    We study directional dependent band gap evolutions and metal-insulator transitions (MITs) in model quantum wire systems within the spin-orbit density wave (SODW) model. The evolution of MIT is studied as a function of varying anisotropy between the intra-wire hopping ([Formula: see text]) and inter-wire hopping ([Formula: see text]) with Rashba spin-orbit coupling. We find that as long as the anisotropy ratio ([Formula: see text]) remains below 0.5, and the Fermi surface nesting is tuned to [Formula: see text], an exotic SODW induced MIT easily develops, with its critical interaction strength increasing with increasing anisotropy. As [Formula: see text] (2D system), the nesting vector switches to [Formula: see text], making this state again suitable for an isotropic MIT. Finally, we discuss various physical consequences and possible applications of the directional dependent MIT. PMID:27248294

  5. Metal-insulator transition in nanocomposite VOx films formed by anodic electrodeposition

    NASA Astrophysics Data System (ADS)

    Tsui, Lok-kun; Hildebrand, Helga; Lu, Jiwei; Schmuki, Patrik; Zangari, Giovanni

    2013-11-01

    The ability to grow VO2 films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VOx films by anodic electrodeposition of V2O5, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO2 stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ˜ -2.4%/ °C from 20 to 140 °C.

  6. The metal-insulator phase transition in the strained GdBiTe3

    NASA Astrophysics Data System (ADS)

    Van Quang, Tran; Kim, Miyoung

    2013-05-01

    In this work, we investigated the electronic structures and magnetic properties of the GdBiTe3 alloy employing a first-principles all-electron density-functional approach, aiming to understand the magnetic phase stability and electronic structure dependences on the exchange correlation potential and the strain. The results show that the ferromagnetic phase is energetically more stable over the paramagnetic phase and the metal-insulator phase transition occurs upon the lattice distortion via the strain along the perpendicular c direction, which is not influenced by the strength of correlation energy introduced to describe the localized f orbitals. Thermoelectric transport properties are also investigated to reveal that the compressive strain markedly enhances the Seebeck coefficient, which is reduced in comparison with the Bismuth telluride due to the Gd doping.

  7. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    SciTech Connect

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni; Hildebrand, Helga; Schmuki, Patrik

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  8. Experimental Observation of a Metal-insulator Transition in 2D at Zero Magnetic Field

    NASA Astrophysics Data System (ADS)

    Kravchenko, S. V.

    1996-03-01

    The scaling theory of Abrahams et al. ^1 has had considerable success in describing many features of metal-insulator transitions. Within this theory, which was developed for non-interacting electrons, no such transition is possible in two-dimensional electron systems (2DES) in the absence of a magnetic field. However, we show experimentally that an ultra-high-mobility 2DES on the surface of silicon does exhibit the signature of a true metal-insulator phase transition at zero magnetic field at a critical electron density n_c ~10^11 cm-2. The energy of electron-electron interactions, ignored in the scaling theory,^1 is the dominant parameter in this 2DES. The resistivity, ρ, is empirically found to scale near the critical point both with temperature T and electric field E so that it can be represented by the form ρ(T,n_s)=ρ(T/T_0(n_s)) as Earrow0 or ρ(E,n_s)=ρ(E/E_0(n_s)) as Tarrow0. At the transition, the resistivity is close to 3h/e^2. Both scaling parameters, T0 and E_0, show power law behavior at the critical point. This is characteristic of a true phase transition and strongly resembles, in particular, the superconductor-insulator transition in disordered thin films,^2 as well as the transition between quantum Hall liquid and insulator.^3 Many high-mobility samples from two different sources (Institute for Metrological Service, Russia, and Siemens AG, Germany) with different oxide thicknesses and gate materials have been studied and similar results were found. Work done in collaboration with J. E. Furneaux, Whitney Mason, V. M. Pudalov, and M. D'Iorio, supported by NSF. ^1 E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979). ^2 Y. Liu, K. A. McGreer, B. Nease, D. B. Haviland, G. Martinez, J. W. Halley, and A. M. Goldman, Phys. Rev. Lett. 67, 2068 (1991). ^3 T. Wang, K. P. Clark, G. F. Spencer, A. M. Mack, and W. P. Kirk, Phys. Rev. Lett. 72, 709 (1994).

  9. Systematics in the metal-insulator transition temperatures in vanadium oxides

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Reisner, G. M.

    2016-01-01

    Nine of the known vanadium oxides, VO 2 - 1 / n (n - a positive or negative integer) with n = 2 - 6 , 8 , 9 , ∞ and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures TMIT (V7O13 is metallic above T=0). Among the persistent efforts to determine the driving force(s) of these transitions, electron-electron (Mott-like) and electron-phonon (Peierls-like) interactions, there were several attempts to find systematics in TMIT as function of n. Here we present an unexpectedly simple and illuminating systematics that holds for positive n: if TMIT is the absolute value of the difference between TM(n) and TP(n), which represent the contributions of electron-electron and electron-phonon interactions, respectively, all data points of TM-TP versus 1/n lie on, or close to, two simple straight lines; one is TM -TP =T∞(7 / n - 1) for V3O5, V4O7, V5O9, V7O13, V8O15, V9O17 and VO2 and the other is TM -TP =T∞(3 / n - 1) for V2O3, V6O11 and VO2.

  10. Metal-Insulator Transition in nanoparticle solids: a kinetic Monte Carlo study

    NASA Astrophysics Data System (ADS)

    Zimanyi, Gergely; Qu, Luman; Voros, Marton

    Nanoparticle (NP) solids recently emerged as a promising platform for high performance electronic/optoelectronic devices, including third generation solar cells, light emitting diodes and field effect transistors. A challenge of NP films is that their charge transport is in the unfavorable hopping/insulating regime. Recent experiments showed that it is possible to tune the NP solids through a Metal-Insulator Transition (MIT) via ligand engineering and ALD matrix infilling. However, the microscopic understanding of this transition is not yet clear. To address this challenge, we developed a Kinetic Monte Carlo transport modeling framework that builds on determining NP parameters from ab initio-based calculations of the energy level structures, charging energies and overlaps, and then uses these to compute the hopping mobility across a disordered NP array by the Marcus and Miller-Abrahams mechanisms. We reproduced and explained the observed non-monotonous dependence of the mobility on the NP diameter. Centrally, we extended our platform to be able to capture the MIT. We determined the MIT phase boundary on the (NP-NP overlap - Electron density) plane. We demonstrated that all mobilities fall on a universal scaling curve, allowing us to determine the critical behavior across the MIT. Supported by: UC Davis Office of Research RISE ANSWER Grant.

  11. Infrared evidence of a Slater metal-insulator transition in NaOsO₃.

    PubMed

    Vecchio, I Lo; Perucchi, A; Di Pietro, P; Limaj, O; Schade, U; Sun, Y; Arai, M; Yamaura, K; Lupi, S

    2013-01-01

    The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO₃ 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO₃ is the first known 3D Slater insulator. PMID:24141899

  12. Infrared evidence of a Slater metal-insulator transition in NaOsO3

    PubMed Central

    Vecchio, I. Lo; Perucchi, A.; Di Pietro, P.; Limaj, O.; Schade, U.; Sun, Y.; Arai, M.; Yamaura, K.; Lupi, S.

    2013-01-01

    The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO3 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO3 is the first known 3D Slater insulator. PMID:24141899

  13. Nanoscale Electrical Imaging of Metal-Insulator Transition in Ion-Gel Gated ZnO Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Ren, Yuan; Yuan, Hongtao; Wu, Xiaoyu; Iwasa, Yoshihiro; Cui, Yi; Hwang, Harold; Lai, Keji

    2015-03-01

    Electric double-layer transistors (EDLTs) using ionic liquid as the gate dielectric have demonstrated a remarkably wide range of density modulation, a condition crucial for the study of novel electronic phases in complex quantum materials. Yet little is known microscopically when carriers are modulated in the EDLT structure because of the technical challenge to image the buried electrolyte-semiconductor interface with nanoscale resolution. Using a cryogenic microwave impedance microscope, we demonstrate the real-space conductivity mapping in ZnO EDLTs with a spatial resolution of 100nm. A thin layer of ion gel, which solidifies below the glass transition temperature of 200K, was spin-coated on the ZnO surface to induce the metal-insulator transition. The microwave images acquired at different channel conductance clearly showed the spatial evolution of local conductivity through the transition. In addition, by applying a large source-drain bias, electrical inhomogeneity was also observed across the source and drain electrodes.

  14. Metal-insulator transition in a spin-orbital-lattice coupled Mott system: K2V8O16

    NASA Astrophysics Data System (ADS)

    Kim, Sooran; Kim, Beom Hyun; Kim, Kyoo; Min, B. I.

    2016-01-01

    We have explored the underlying mechanism of the metal-insulator transition (MIT) in hollandite-type vanadate, K2V8O16 , which has a quasi-one-dimensional chain structure and undergoes the MIT and Peierls-like structural transition upon cooling. For this purpose, we have investigated its electronic and magnetic properties in comparison to those of Rb2V8O16 that also undergoes the MIT but without the Peierls-like structural distortion. We have found that K2V8O16 is a spin-orbital-lattice coupled Mott system and manifests the orbital-selective Mott transition. The interplay of on-site Coulomb interaction, the magnetic-exchange interaction, and the Jahn-Teller-type tetragonal distortion plays an essential role in driving the MIT of K2V8O16 , inducing the the charge ordering (CO) and orbital ordering of V t2 g bands. The CO of V+3 and V+4 occurs in separate chains, preserving the inversion symmetry of the crystal. The dx y orbitals form the spin-singlet state along the chain direction. The Peierls-like distortion does not play an essential role in the MIT.

  15. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Bohnenbuck, B.; Chuang, Y.-D.; Geck, J.; Tokura, Y.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Sawatzky, G. A.; Damascelli, A.

    2010-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr3(Ru1-xMnx)2O7, performed at both Ru and Mn L-edges. Resonant magnetic superstructure reflections, which indicate an incipient instability of the parent compound, are detected below the transition. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x˜0.05 Mn substitution. In collaboration with A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley Lab), I. Zegkinoglou, M.W. Haverkort (MPI, Stuttgart), I.S. Elfimov, D.G. Hawthorn (UBC), R. Mathieu, S. Satow, H. Takagi (Tokyo), H.-H. Wu and C. Sch"ußler-Langeheine (Cologne).

  16. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Hippalgaonkar, Kedar; Lee, Sangwook; Ko, Changhyun; Yang, Fan; Suh, Joonki; Liu, Kai; Wang, Kevin; Zhang, Xiang; Dames, Chris; Wu, Junqiao

    In an electrically conductive solid, the Wiedemann-Franz (WF) law requires the electronic contribution to thermal conductivity to be proportional to the product of electrical conductivity and absolute temperature , where the ratio is the Lorenz number, typically not much different from the Sommerfeld value L0 = 2.44x10-8 W-ohm-K-2 at room temperature. The WF law reflects a basic property of metals where charge and heat are both carried by the same quasiparticles that both experience elastic scattering. At temperatures below the Debye temperature, the WF law has been experimentally shown to be robust in conventional conductors, with violations theoretically predicted or experimentally observed in strongly correlated electron systems or Luttinger liquids. However, the experimentally observed violations are at very low temperatures. Here we report breakdown of the WF law in a strongly correlated metal, in which the electronic thermal conductivity and L nearly vanish at temperatures above room temperature, where the electronic thermal conductivity amounts to only <~5% of the value expected from the WF law. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition.

  17. Temperature dependence of thermal conductivity of VO2 thin films across metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Kizuka, Hinako; Yagi, Takashi; Jia, Junjun; Yamashita, Yuichiro; Nakamura, Shinichi; Taketoshi, Naoyuki; Shigesato, Yuzo

    2015-05-01

    Thermal conductivity of a 300-nm-thick VO2 thin film and its temperature dependence across the metal-insulator phase transition (TMIT) were studied using a pulsed light heating thermoreflectance technique. The VO2 and Mo/VO2/Mo films with a VO2 thickness of 300 nm were prepared on quartz glass substrates: the former was used for the characterization of electrical properties, and the latter was used for the thermal conductivity measurement. The VO2 films were deposited by reactive rf magnetron sputtering using a V2O3 target and an Ar-O2 mixture gas at 645 K. The VO2 films consisted of single phase VO2 as confirmed by X-ray diffraction and electron beam diffraction. With increased temperature, the electrical resistivity of the VO2 film decreased abruptly from 6.3 × 10-1 to 5.3 × 10-4 Ω cm across the TMIT of around 325-340 K. The thermal conductivity of the VO2 film increased from 3.6 to 5.4 W m-1 K-1 across the TMIT. This discontinuity and temperature dependence of thermal conductivity can be explained by the phonon heat conduction and the Wiedemann-Franz law.

  18. Universal and Non-universal Behavior at the Metal Insulator Transition.

    NASA Astrophysics Data System (ADS)

    Helgren, Erik; Zeng, Li; Querlioz, Damien; Hellman, Frances

    2006-03-01

    A metal-insulator transition in amorphous metal semiconductor alloys is known to exist at dopant concentrations much higher (˜ 12 at. %) than their crystalline counterparts[1]. We have studied the MIT in alloys grown using MBE for a series of semiconductor matrices, Si, Ge and both C and H-C (hydrogenated carbon) for various dopants (magnetic Gd and non-magnetic Y and Nb), as a function of concentration and magnetic field tuning. We compare the temperature dependence of the DC conductivity in the magnetically doped systems to the non-magnetic systems and to crystalline doped semiconductors (i.e. Si:P). Results are discussed in terms of a theoretical model that incorporates both disorder and electronic correlations[2]. This model correctly describes many universally observed aspects including the remarkably similar temperature dependence of the metallic and insulating DC conductivity of crystalline and amorphous systems, despite the vastly different disorder and electron concentration. There are however very significant variations in the prefactors that control the magnitude of the conductivity, which we correlate with the microscopic physics of each system. [1] F. Hellman et al. PRL 77, 4652 [2] Lee and Ramakrishnan RMP 57, 287

  19. Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy.

    PubMed

    Zhang, Chenxi; Kc, Santosh; Nie, Yifan; Liang, Chaoping; Vandenberghe, William G; Longo, Roberto C; Zheng, Yongping; Kong, Fantai; Hong, Suklyun; Wallace, Robert M; Cho, Kyeongjae

    2016-08-23

    Metal-insulator transitions in low-dimensional materials under ambient conditions are rare and worth pursuing due to their intriguing physics and rich device applications. Monolayer MoTe2 and WTe2 are distinguished from other TMDs by the existence of an exceptional semimetallic distorted octahedral structure (T') with a quite small energy difference from the semiconducting H phase. In the process of transition metal alloying, an equal stability point of the H and the T' phase is observed in the formation energy diagram of monolayer WxMo1-xTe2. This thermodynamically driven phase transition enables a controlled synthesis of the desired phase (H or T') of monolayer WxMo1-xTe2 using a growth method such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Furthermore, charge mediation, as a more feasible method, is found to make the T' phase more stable than the H phase and induce a phase transition from the H phase (semiconducting) to the T' phase (semimetallic) in monolayer WxMo1-xTe2 alloy. This suggests that a dynamic metal-insulator phase transition can be induced, which can be exploited for rich phase transition applications in two-dimensional nanoelectronics. PMID:27415610

  20. XPS and ARPES study of the metal-insulator transition in Mn-substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Zhu, Zhihuai; Levy de Castro, G.; Hossain, M. A.; Manju, U.; McCheyney, J. L.; Bostwick, A.; Rotenberg, E.; Yoshida, Y.; Elfimov, I. S.; Panaccione, G.; Damascelli, A.

    2010-03-01

    We have studied the metal-insulator transition in Mn-substituted Sr3Ru2O7 by core-level x-ray photoemission (XPS) and angle-resolved photoemission spectroscopy (ARPES). In XPS, both the surface- and bulk-sensitive spectra show a two-peak structure, corresponding to the well screened and the unscreened excitations. The intensity of the well-screened peak is suppressed upon increasing the concentration of Mn, reflecting a metal-to-insulator transition induced by Mn impurities. In ARPES, changes in Fermi surface topology and band dispersions are observed as the system crosses over from a metal to a - possibly Mott - insulator. We observed a variation and enhancement of the Fermi-surface nesting upon Mn substitution, which might be connected to the emergence of the magnetic superstructure revealed by our resonant elastic soft x-ray scattering results [1].[4pt] [1] M.A. Hossain et al., arXiv:0906.0035 (2009).

  1. Mg doping of thermochromic VO2 films enhances the optical transmittance and decreases the metal-insulator transition temperature

    NASA Astrophysics Data System (ADS)

    Mlyuka, N. R.; Niklasson, G. A.; Granqvist, C. G.

    2009-10-01

    Thermochromic films of MgxV1-xO2 were made by reactive dc magnetron sputtering onto heated glass. The metal-insulator transition temperature decreased by ˜3 K/at. %Mg, while the optical transmittance increased concomitantly. Specifically, the transmittance of visible light and of solar radiation was enhanced by ˜10% when the Mg content was ˜7 at. %. Our results point at the usefulness of these films for energy efficient fenestration.

  2. Variation of optical conductivity spectra in the course of bandwidth-controlled metal-insulator transitions in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, K.; Fujioka, J.; Tokura, Y.

    2016-06-01

    We spectroscopically investigate a series of pyrochlore iridates R2Ir2O7 (R : rare-earth and Y ions) where the metal-insulator transitions are induced by systematic bandwidth control via chemical substitutions of R ions. We establish the phase diagram of R2Ir2O7 , as endorsed by the variation of the optical conductivity spectra, in which the competing phases including paramagnetic insulator (PI), paramagnetic metal (PM), and antiferromagnetic insulator (AFI) show up as a function of bandwidth and temperature. For small R -ionic radius (R = Y-Sm), i.e., strongly correlated region, pronounced peaks on the edge of the optical gap are discerned below the magnetic transition temperature TN, which is attributable to exciton and magnon sideband absorptions. It turns out that the estimated nearest-neighbor exchange interaction increases as R -ionic radius increases, whereas TN monotonically decreases, indicating that the all-in all-out magnetic order arises from the interplay among several exchange interactions inherent to extended 5 d orbitals on the frustrated lattice. For larger R -ionic radius (R = Sm-Pr), i.e., relatively weakly correlated region, the optical conductivity spectra markedly change below 0.3 eV in the course of PM-AFI transition, implying that the magnetic order induces the insulating state. In particular, we have found distinct electrodynamics in the composition of R =Nd0.5Pr0.5 which is located on the boundary of the quantum PM-AFI transition, pointing to the possible emergence of unconventional topological electronic phases related possibly to the correlated Weyl electrons.

  3. Mid-infrared properties of a VO2 film near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Choi, H. S.; Ahn, J. S.; Jung, J. H.; Noh, T. W.; Kim, D. H.

    1996-08-01

    A VO2 film was grown on a sapphire(0001) substrate using pulsed laser deposition. The film showed a first-order metal-insulator (MI) transition and its dc conductivity started to increase drastically near 68 °C and changed by three orders of magnitude. Mid-infrared transmittance and reflectance spectra of the VO2 film were measured between 20 °C and 90 °C. Using the intensity transfer-matrix method, the frequency-dependent dielectric constant ɛf(ω) and the conductivity σf(ω) of the film were obtained between 1600 and 4000 cm-1 from the measured transmittance and reflectance spectra. With the ɛf(ω) and σf(ω) spectra, mid-infrared properties of the VO2 film near the MI transition region were investigated in detail. Above 78 °C, ɛf(ω)<0 and dɛf/dω>0, which is a typical metallic behavior. In particular, ɛf(ω) and σf(ω) at 88 °C were analyzed in terms of extended Drude model in which the frequency-dependent scattering rate and the effective mass could be obtained. The mean free path of charge carriers in the dc limit was estimated to be larger by an order of magnitude than the previously reported value, i.e., 4 Å. Below 74 °C, ɛf(ω)>0 and dɛf/dω~=0, which is characteristic of an insulator. Interestingly, ɛf in the insulating region increased as the temperature approached the MI transition temperature. To explain this anomalous behavior, the MI transition of the VO2 film was modeled with coexistence of metallic and insulating domains and their dynamic evolution. Then the behaviors of ɛf(ω) and σf(ω) were explained using the effective medium approximation, which is a mean-field theory predicting a percolation transition. This work clearly demonstrates that the transport and optical properties near the MI transition region are strongly influenced by the connectivity of the metallic domains.

  4. Metal--Insulator Transition in Bi{sub 2}Sr{sub 2}Cu{sub 1}O{sub 6+d}(Bi-2201) Thin Films

    SciTech Connect

    Pop, Aurel V.

    2009-05-22

    We have studied the influence of disorder induced by oxygen on the normal state resistivity of under doped Bi{sub 2}Sr{sub 2}Cu{sub 1}O{sub 6+d}(Bi-2201) thin films, deposited in situ onto heated SrTiO{sub 3}(100) substrates by using DC magnetron sputtering for an off-stoichiometric target. The compositions and structural characterization for the deposited films were carried by (EDX), (XPS) and X-ray diffraction measurements. The effect of partial oxygen pressure in the sputtering gas on the metal-insulator transition are presented.

  5. Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

    2016-03-01

    This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

  6. Tuning the metal-insulator transition in NdNiO3 heterostructures via Fermi surface instability and spin fluctuations

    NASA Astrophysics Data System (ADS)

    Dhaka, R. S.; Das, Tanmoy; Plumb, N. C.; Ristic, Z.; Kong, W.; Matt, C. E.; Xu, N.; Dolui, Kapildeb; Razzoli, E.; Medarde, M.; Patthey, L.; Shi, M.; Radović, M.; Mesot, Joël

    2015-07-01

    We employed in situ pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO3 (NNO) thin films, grown on NdGaO3(110) and LaAlO3(100) substrates. In the metallic phase, we observe three-dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized bands with well-defined quasiparticles. Upon cooling across the MIT in NNO/NGO sample, the quasiparticles lose coherence via a spectral weight transfer from near the Fermi level to localized states forming at higher binding energies. In the case of NNO/LAO, the bands are apparently shifted upward with an additional holelike pocket forming at the corner of the Brillouin zone. We find that the renormalization effects are strongly anisotropic and are stronger in NNO/NGO than NNO/LAO. Our study reveals that substrate-induced strain tunes the crystal field splitting, which changes the FS properties, nesting conditions, and spin-fluctuation strength, and thereby controls the MIT via the formation of an electronic order parameter with QAF˜(1 /4 ,1 /4 ,1 /4 ±δ ) .

  7. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    PubMed Central

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-01-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films. PMID:26975328

  8. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    NASA Astrophysics Data System (ADS)

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-03-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films.

  9. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    NASA Astrophysics Data System (ADS)

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-08-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture.

  10. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.

    PubMed

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  11. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    PubMed Central

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  12. Metal-insulator transition in an one-dimensional half-filled interacting mesoscopic ring with spinless fermions: Exact results

    NASA Astrophysics Data System (ADS)

    Saha, Madhumita; Maiti, Santanu K.

    2016-04-01

    We calculate persistent current of one-dimensional rings of fermions neglecting the spin degrees of freedom considering only nearest-neighbor Coulomb interactions with different electron fillings in both ordered and disordered cases. We treat the interaction exactly and find eigenenergies by exact diagonalization of many-body Hamiltonian and compute persistent current by numerical derivative method. We also determine Drude weight to estimate the conducting nature of the system. From our numerical results, we obtain a metal-insulator transition in half-filled case with increasing correlation strength U but away from half-filling no such transition is observed even for large U.

  13. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    SciTech Connect

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  14. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide.

    PubMed

    Booth, Jamie M; Drumm, Daniel W; Casey, Phil S; Smith, Jackson S; Seeber, Aaron J; Bhargava, Suresh K; Russo, Salvy P

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  15. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    PubMed Central

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  16. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-05-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.

  17. Structural and metal-insulator transitions in ionic liquid-gated Ca3Ru2O7 surface

    NASA Astrophysics Data System (ADS)

    Puls, Conor P.; Cai, Xinxin; Zhang, Yuhe; Peng, Jin; Mao, Zhiqiang; Liu, Ying

    2014-06-01

    We report the fabrication and measurements of ionic liquid gated Hall bar devices prepared on the ab face of a thin Ca3Ru2O7 flake exfoliated from bulk single crystals that were grown by a floating zone method. The devices were categorized into two types: those with their electrical transport properties dominated by c-axis transport in type A or that of the in-plane in type B devices. Bulk physical phenomena, including a magnetic transition near 56 K, a structural and metal-insulator transition at a slightly lower temperature, as well as the emergence of a highly unusual metallic state as the temperature is further lowered, were found in both types of devices. However, the Shubnikov-de Haas oscillations were found in type A but not type B devices, most likely due to enhanced disorder on the flake surface. Finally, the ionic liquid gating of a type B device revealed a shift in critical temperature of the structural and metal-insulator transition, suggesting that this transition is tunable by the electric field effect.

  18. Metal insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

    NASA Astrophysics Data System (ADS)

    Silwal, Punam; Miao, Ludi; Stern, Ilan; Zhou, Xiaolan; Hu, Jin; Ho Kim, Dae

    2012-01-01

    We have grown epitaxial thin films of spinel NiCo2O4 on single crystalline MgAl2O4 (001) substrates by pulsed laser deposition. Magnetization measurement revealed hysteresis loops consistent with the reported ferrimagnetic order. The electrical transport exhibits a metallic behavior with the lowest resistivity of 0.8 mΩ cm and a metal insulator transition around the Néel temperature. The systematic variation in the properties of the films grown at different growth temperatures indicates a close relationship between the magnetic order and electrical transport.

  19. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    PubMed

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  20. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-08-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or `Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  1. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    PubMed Central

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  2. Magnetic and Metal-Insulator Transition in natural Transition Metal Sulfides

    NASA Astrophysics Data System (ADS)

    Wang, Renxiong; Metz, Tristin; Liu, I.-Lin; Wang, Kefeng; Wang, Xiangfeng; Jeffries, J. R.; Saha, S. R.; Greene, R. L.; Paglione, J.; Santelli, C. C.; Post, J.,

    In collaboration with the Smithsonian Institution's National Museum of Natural History, we present detailed studies of a class of natural minerals with potential to harbor correlated behavior. Transition metal sulfide minerals, such as Bornite (Cu5FeS4), are an important family of compounds known for their thermoelectric properties. We will present low temperature experimental studies of magnetic transitions and focus on a compound that exhibits a metal to insulator transition concident with entrance to an antiferromagnetic ground state, suggesting a potentially interesting system with promise for realizing new correlated states of matter in a naturally occurring mineral.

  3. Bond formation effects on the metal-insulator transition in the half-filled kagome Hubbard model

    NASA Astrophysics Data System (ADS)

    Higa, Ryota; Asano, Kenichi

    2016-06-01

    We study the metal-insulator transition in the half-filled Hubbard model on a Kagome lattice using the variational cluster approximation. The strong coupling limit of the model corresponds to the S =1 /2 Kagome Heisenberg antiferromagnet, which is known to have a singlet ground state, although its detail is still debated. As the results of the cluster methods generally depend much on the choice of the unit cluster, we have chosen the clusters that are compatible with these singlet ground states in the strong coupling case found so far, which basically consist of even number of sites. It is found that the correlated electrons on the Kagome lattice have a strong tendency to form valence-bond structures, which are the resonation of electrons on a single bond or several bonds forming loops. The zero-temperature metal-insulator transition at some interaction strength is possibly driven by the formation of such short range valence bonds and shows a second order character, which is distinctive from the Brinkman-Rice scenario. The electrons on these valence bonds further localizes onto each site as the interaction increases, and the valence bonds of electrons finally turn into magnetic singlet bonds between localized S =1 /2 spins, which are consistent with the ground states of the Kagome antiferromagnet.

  4. Relative Influence of Intrinsic and Extrinsic Factors on the Metal-Insulator Transition of VO2 Nanowires

    NASA Astrophysics Data System (ADS)

    Kim, In Soo

    The influence of stoichiometry on the metal-insulator transition of vanadium dioxide (VO2) nanowires was investigated using Raman spectroscopy. Controlled reduction of nominally strain-free suspended VO2 nanowires was conducted by rapid thermal annealing (RTA). The deficiency in oxygen assisted in the unprecedented suppression of the metallic (R) phase to temperatures as low as 103 K through generation of free electrons. In a complementary manner, oxygen-rich conditions stabilized the metastable monoclinic (M2) and triclinic (T) phases. A pseudo-phase diagram with dimensions of temperature and stoichiometry was established, highlighting the accessibility of new phases in the nanowire geometry. Detection of the dynamic elastic response across the metal-insulator transition in suspended VO2 nanowires was enabled by fiber-coupled polarization dependent interferometry. Dual-beam Raman spectroscopy was developed to determine the local domain/phase structure of VO2 nanowires, which allowed for accurate modeling using COMSOL finite element analysis (FEA). The Young's moduli of the single crystal insulating (M1) and metallic (R) phases without artifacts were determined for the first time. The sources of dissipation were identified as clamping losses, structural losses, thermoelastic damping, and domain wall motion. While contribution of thermoelastic damping was found to be dominant in the terminal phases, extraordinary dissipation was observed upon formation and movement of domain walls. Finally, it was shown that creation of local defects could lead to new classes of tunable sensors with a discrete and programmable frequency response with temperature.

  5. Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

    NASA Astrophysics Data System (ADS)

    Gold, A.

    1991-10-01

    Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

  6. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3 Ru 2 O 7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Zhu, Z. H.; Bohnenbuck, B.; Chuang, Y.-D.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Elfimov, I. S.; Sawatzky, G. A.; Damascelli, A.

    2011-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr 3 (Ru 1-x Mn x)2 O7 , performed at both Ru and Mn L -edges. Resonant magnetic superstructure reflections together with ab-initio density functional theory calculations identify the ground state as a spin checkerboard with blocks of 4 spins up and 4 spins down. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x ~ 0.05 Mn substitution. Perhaps more important, our results suggest that the same checkerboard instability might be present already in the parent compound Sr 3 Ru 2 O7 . In collaboration with: A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley) I. Zegkinoglou, M.W. Haverkort (MPI) J. Geck, D.G. Hawthorn (UBC) R. Mathieu, Y. Tokura, S. Satow, H. Takagi (Tokyo) H.-H. Wu and C. Schussler-Langeheine (Cologne).

  7. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    SciTech Connect

    Wangoh, L.; Quackenbush, N. F.; Marley, P. M.; Banerjee, S.; Sallis, S.; Fischer, D. A.; Woicik, J. C.; Piper, L. F. J.

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  8. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    PubMed Central

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  9. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    NASA Astrophysics Data System (ADS)

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems.

  10. Density functional plus dynamical mean-field theory of the metal-insulator transition in early transition-metal oxides

    NASA Astrophysics Data System (ADS)

    Dang, Hung T.; Ai, Xinyuan; Millis, Andrew J.; Marianetti, Chris A.

    2014-09-01

    The combination of density functional theory and single-site dynamical mean-field theory, using both Hartree and full continuous-time quantum Monte Carlo impurity solvers, is used to study the metal-insulator phase diagram of perovskite transition-metal oxides of the form ABO3 with a rare-earth ion A =Sr, La, Y and transition metal B =Ti, V, Cr. The correlated subspace is constructed from atomiclike d orbitals defined using maximally localized Wannier functions derived from the full p-d manifold; for comparison, results obtained using a projector method are also given. Paramagnetic DFT + DMFT computations using full charge self-consistency along with the standard "fully localized limit" (FLL) double counting are shown to incorrectly predict that LaTiO3, YTiO3, LaVO3, and SrMnO3 are metals. A more general examination of the dependence of physical properties on the mean p-d energy splitting, the occupancy of the correlated d states, the double-counting correction, and the lattice structure demonstrates the importance of charge-transfer physics even in the early transition-metal oxides and elucidates the factors underlying the failure of the standard approximations. If the double counting is chosen to produce a p-d splitting consistent with experimental spectra, single-site dynamical mean-field theory provides a reasonable account of the materials properties. The relation of the results to those obtained from "d-only" models in which the correlation problem is based on the frontier orbital p-d antibonding bands is determined. It is found that if an effective interaction U is properly chosen the d-only model provides a good account of the physics of the d1 and d2 materials.

  11. Theory of the metal-insulator transition in Pr Ru4 P12 and Pr Fe4 P12

    NASA Astrophysics Data System (ADS)

    Curnoe, S. H.; Harima, H.; Takegahara, K.; Ueda, K.

    2004-12-01

    All symmetry-allowed couplings between the 4f2 -electron ground state doublet of trivalent praseodymium in PrRu4P12 and PrFe4P12 and displacements of the phosphorus, iron, or ruthenium ions are considered. Two types of displacements can change the crystal lattice from body-centred cubic to simple orthorhombic or to simple cubic. The first type lowers the point group symmetry from tetrahedral to orthorhombic, while the second type leaves it unchanged, with corresponding space group reductions Im3¯→Pmmm and Im3¯→Pm3¯ , respectively. In former case, the lower point group symmetry splits the degeneracy of the 4f2 doublet into states with opposite quadrupole moment, which then leads to antiquadrupolar ordering, as in PrFe4P12 . Either kind of displacement may conspire with nesting of the Fermi surface to cause the metal-insulator or partial metal-insulator transition observed in PrFe4P12 and PrRu4P12 . We investigate this scenario using band-structure calculations, and it is found that displacements of the phosphorus ions in PrRu4P12 (with space-group reduction Im3¯→Pm3¯ ) open a gap everywhere on the Fermi surface.

  12. Pressure-driven metal-insulator transition in BiFeO3 from dynamical mean-field theory

    NASA Astrophysics Data System (ADS)

    Shorikov, A. O.; Lukoyanov, A. V.; Anisimov, V. I.; Savrasov, S. Y.

    2015-07-01

    A metal-insulator transition (MIT) in BiFeO3 under pressure was investigated by a method combining generalized gradient corrected local density approximation with dynamical mean-field theory (GGA+DMFT). Our paramagnetic calculations are found to be in agreement with the experimental phase diagram: Magnetic and spectral properties of BiFeO3 at ambient and high pressures were calculated for three experimental crystal structures R 3 c , P b n m , and P m 3 ¯m . At ambient pressure in the R 3 c phase, an insulating gap of 1.2 eV was obtained in good agreement with its experimental value. Both R 3 c and P b n m phases have a metal-insulator transition that occurs simultaneously with a high-spin (HS) to low-spin (LS) transition. The critical pressure for the P b n m phase is 25-33 GPa, which agrees well with the experimental observations. The high-pressure and -temperature P m 3 ¯m phase exhibits a metallic behavior observed experimentally as well as in our calculations in the whole range of considered pressures and undergoes the LS state at 33 GPa, where a P b n m to P m 3 ¯m transition is experimentally observed. The antiferromagnetic GGA+DMFT calculations carried out for the P b n m structure result in simultaneous MIT and HS-LS transitions at a critical pressure of 43 GPa in agreement with the experimental data.

  13. Full-configuration-interaction study of the metal-insulator transition in model systems: Peierls dimerization in H(n) rings and chains.

    PubMed

    Giner, Emmanuel; Bendazzoli, Gian Luigi; Evangelisti, Stefano; Monari, Antonio

    2013-02-21

    The Peierls dimerization with associated metal-insulator transition is studied in a model systems with ab initio methods. These are chains and rings H(N) of hydrogen atoms treated by full CI using a minimal STO-3G atomic orbital basis for N = 6 to N = 14. We describe and discuss in some detail the potential energy surface governing Peierls' dimerization and study the localization tensor as the indicator of the metal-insulator transition. Results for linear chains and rings are compared. PMID:23445017

  14. Superconductor-Metal-Insulator Transitions in two dimensional amorphous NbxSi1-x

    NASA Astrophysics Data System (ADS)

    Humbert, Vincent; Couëdo, François; Crauste, Olivier; Bergé, Laurent; Drillien, Anne-Aelle; Akiko Marrache-Kikuchi, Claire; Dumoulin, Louis

    2014-12-01

    We report on the study of the two-dimensional Disorder-induced Superconductor- Insulator Transition (D-SIT) in NbxSi1-x thin films. In this proceeding, we present new results on the emergence of an insulating state from a 2d metallic state.

  15. Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 films

    NASA Astrophysics Data System (ADS)

    Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.; Beaumont, A.; Mayet, R.; Mennai, A.; Cosset, F.; Bessaudou, A.; Fabert, M.

    2016-05-01

    The metal-insulator switching characteristics of VO2 play a crucial role in the performances of VO2-based devices. In this paper we study high-quality (010)-oriented epitaxial films grown on (001) sapphire substrates by means of electron-beam evaporation and investigate the role of interface defects and thermal strain on the parallel evolution of the metal-insulator transition (MIT) and structural phase transition (SPT) between the monoclinic (insulator) and rutile (metal) phases. It is demonstrated that the highly-mismatched VO2/Al2O3 interface promotes a domain-matching epitaxial growth process where the film grows in a strain-relaxed state and the lattice distortions are confined at the interface in regions with limited spatial extent. Upon cooling down from the growth temperature, tensile strain is stored in the films as a consequence of the thermal expansion mismatch between VO2 and Al2O3 . The thinnest films exhibit the highest level of tensile strain in the interfacial plane resulting in a shift of both the MIT and the SPT temperatures towards higher values, pointing to a stabilization of the monoclinic/insulating phase. Concomitantly, the electrical switching characteristics are altered (lower resistivity ratio and broader transition) as a result of the presence of structural defects located at the interface. The SPT exhibits a similar evolution with, additionally, a broader hysteresis due to the formation of an intermediate, strain-stabilized phase in the M1-R transition. Films with thickness ranging between 100-300 nm undergo a partial strain relaxation and exhibit the best performances, with a sharp (10°C temperature range) and narrow (hysteresis <4°C) MIT extending over more than four orders of magnitude in resistivity (6 ×104 ).

  16. The finite size effect on the metal-insulator transition of MOCVD grown VO{sub 2} films

    SciTech Connect

    Kim, Hyung Kook; Chiarello, R.P.; You, Hoydoo; Chang, M.H.L.; Zhang, T.J.; Lam, D.J.

    1991-11-01

    We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO{sub 2} films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO{sub 2} films with out-of-plane particle size ranging from 60--310 {Angstrom}. Each Vo{sub 2} film was grown on a thin TiO{sub 2} buffer layer, which in turn was grown by MOCVD on a polished sapphire (112) substrate. The transition was found to be first order. As the out-of-plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60{Angstrom} film the transition was observed at {approximately}61{degrees}C with a transition width if {approximately}10{degrees}C, while for the 310{Angstrom} film the transition temperature was {approximately}59{degrees}C and the transition width {approximately} 2{degree}C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

  17. The finite size effect on the metal-insulator transition of MOCVD grown VO sub 2 films

    SciTech Connect

    Kim, Hyung Kook; Chiarello, R.P.; You, Hoydoo; Chang, M.H.L.; Zhang, T.J.; Lam, D.J.

    1991-11-01

    We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO{sub 2} films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO{sub 2} films with out-of-plane particle size ranging from 60--310 {Angstrom}. Each Vo{sub 2} film was grown on a thin TiO{sub 2} buffer layer, which in turn was grown by MOCVD on a polished sapphire (112) substrate. The transition was found to be first order. As the out-of-plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60{Angstrom} film the transition was observed at {approximately}61{degrees}C with a transition width if {approximately}10{degrees}C, while for the 310{Angstrom} film the transition temperature was {approximately}59{degrees}C and the transition width {approximately} 2{degree}C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

  18. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    SciTech Connect

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  19. Sr{sub 2}CrOsO{sub 6}: End point of a spin-polarized metal-insulator transition by 5d band filling

    SciTech Connect

    Krockenberger, Y.; Mogare, K.; Jansen, M.; Reehuis, M.; Tovar, M.; Vaitheeswaran, G.; Kanchana, V.; Bultmark, F.; Delin, A.; Wilhelm, F.; Rogalev, A.; Winkler, A.; Alff, L.

    2007-01-01

    In the search for new spintronic materials with high spin polarization at room temperature, we have synthesized an osmium-based double perovskite with a Curie temperature of 725 K. Our combined experimental results confirm the existence of a sizable induced magnetic moment at the Os site, supported by band-structure calculations, in agreement with a proposed kinetic-energy-driven mechanism of ferrimagnetism in these compounds. The intriguing property of Sr{sub 2}CrOsO{sub 6} is that it is at the end point of a metal-insulator transition due to 5d band filling and at the same time ferrimagnetism and high-spin polarization are preserved.

  20. Effect of crystal-field splitting and interband hybridization on the metal-insulator transitions of strongly correlated systems

    NASA Astrophysics Data System (ADS)

    Poteryaev, Alexander I.; Ferrero, Michel; Georges, Antoine; Parcollet, Olivier

    2008-07-01

    We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.

  1. Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

    PubMed

    Fan, L L; Chen, S; Liao, G M; Chen, Y L; Ren, H; Zou, C W

    2016-06-29

    As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future. PMID:27168422

  2. Resistance noise spectroscopy across the thermally and electrically driven metal-insulator transitions in VO2 nanobeams

    NASA Astrophysics Data System (ADS)

    Alsaqqa, Ali; Kilcoyne, Colin; Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

    Vanadium dioxide (VO2) is a strongly correlated material that exhibits a sharp thermally driven metal-insulator transition at Tc ~ 340 K. The transition can also be triggered by a DC voltage in the insulating phase with a threshold (Vth) behavior. The mechanisms behind these transitions are hotly discussed and resistance noise spectroscopy is a suitable tool to delineate different transport mechanisms in correlated systems. We present results from a systematic study of the low frequency (1 mHz < f < 10 Hz) noise behavior in VO2 nanobeams across the thermally and electrically driven transitions. In the thermal transition, the power spectral density (PSD) of the resistance noise is unchanged as we approach Tc from 300 K and an abrupt drop in the magnitude is seen above Tc and it remains unchanged till 400 K. However, the noise behavior in the electrically driven case is distinctly different: as the voltage is ramped from zero, the PSD gradually increases by an order of magnitude before reaching Vth and an abrupt increase is seen at Vth. The noise magnitude decreases above Vth, approaching the V = 0 value. The individual roles of percolation, Joule heating and signatures of correlated behavior will be discussed. This work is supported by NSF DMR 0847324.

  3. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

    PubMed

    Martens, K; Jeong, J W; Aetukuri, N; Rettner, C; Shukla, N; Freeman, E; Esfahani, D N; Peeters, F M; Topuria, T; Rice, P M; Volodin, A; Douhard, B; Vandervorst, W; Samant, M G; Datta, S; Parkin, S S P

    2015-11-01

    The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2). PMID:26588400

  4. Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2014-10-01

    The electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x =0-0.06) grown on α-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S | values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in a good linear relation with MI transition temperatures. |S| values of V1-xWxO2 films at T>TS were constant at low values of 23μVK-1 independently of x, which reflects a metallic electronic structure, whereas those at T

  5. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    NASA Astrophysics Data System (ADS)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  6. Giant oxygen isotope effect on the metal-insulator transition of RNiO{sub 3} perovskites

    SciTech Connect

    Medarde, M.; Fauth, F.; Furrer, A.; Lacorre, P.; Conder, K.

    1998-08-01

    The metal to insulator transition displayed by all the members of the perovskite family RNiO{sub 3} (R = 4f rare earth different from La) has attracted a lot of interest since it constitutes one of the few examples of this phenomenon in perfectly stoichiometric compounds. In spite of the great deal of work performed during the last six years, the mechanism responsible for the electronic localization is still a matter of controversy. The observation of unusually large O isotope shifts on the metal-insulator temperature T{sub MI} reported in this study represents an important advance since it clearly proves the dominant role of the electron lattice interaction as driving force for the transition. Moreover, the good agreement between this observation and a simple model based on the existence of Jahn-Teller polarons in the metallic state gives further qualitative and quantitative support to the polaronic picture recently suggested to account for O isotope effects in other 3d transition metal oxides containing Jahn-Teller ions.

  7. Linear-in-temperature resistivity close to a topological metal insulator transition in ultra-multi valley fcc-ytterbium

    NASA Astrophysics Data System (ADS)

    Enderlein, Carsten; Fontes, Magda; Baggio-Saitovich, Elisa; Continentino, Mucio A.

    2016-01-01

    The semimetal-to-semiconductor transition in fcc-Yb under modest pressure can be considered a picture book example of a metal-insulator transition of the Lifshitz type. We have performed transport measurements at low temperatures in the closest vicinity of the transition and related DFT calculations of the Fermi surface. Our resistivity measurements show a linear temperature dependence with an unusually low dρ / dT at low temperatures approaching the MIT. The calculations suggest fcc-ytterbium being an ultra-multi valley system with 24 electron and 6 hole pockets in the Brillouin zone. Such Fermi surface topology naturally supports the appearance of strongly correlated phases. An estimation of the quasiparticle-enhanced effective mass shows that the scattering rate is by at least two orders of magnitude lower than in other materials which exhibit linear-in-T behavior at a quantum critical point. However, we cannot exclude an excessive effective mass enhancement, when the van Hove singularity touches the Fermi level.

  8. Dynamic phase coexistence and non-Gaussian resistance fluctuations in VO2 near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Samanta, Sudeshna; Raychaudhuri, A. K.; Zhong, Xing; Gupta, A.

    2015-11-01

    We have carried out an extensive investigation on the resistance fluctuations (noise) in an epitaxial thin film of VO2 encompassing the metal-insulator transition (MIT) region to investigate the dynamic phase coexistence of metal and insulating phases. Both flicker noise as well as the Nyquist noise (thermal noise) were measured. The experiments showed that flicker noise, which has a 1 /f spectral power dependence, evolves with temperature in the transition region following the evolution of the phase fractions and is governed by activated kinetics. Importantly, closer to the insulating end of the transition, when the metallic phase fraction is low, the magnitude of the noise shows an anomaly and a strong non-Gaussian component of noise develops. In this region, the local electron temperature (as measured through the Nyquist noise thermometry) shows a deviation from the equilibrium bath temperature. It is proposed that this behavior arises due to current crowding where a substantial amount of the current is carried through well separated small metallic islands leading to a dynamic correlated current path redistribution and an enhanced effective local current density. This leads to a non-Gaussian component to the resistance fluctuation and an associated local deviation of the electron temperature from the bath. Our experiment establishes that phase coexistence leads to a strong inhomogeneity in the region of MIT that makes the current transport strongly inhomogeneous and correlated.

  9. Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO{sub 3} thin films

    SciTech Connect

    Kumar, Yogesh; Choudhary, R. J.; Kumar, Ravi

    2012-10-01

    We report here the strain dependent structural and electrical transport properties of epitaxial NdNiO{sub 3} thin films. Pulsed laser deposition technique was used to grow the NdNiO{sub 3} thin films on c-axis oriented SrTiO{sub 3} single crystals. Deposited films were irradiated using 200 MeV Ag{sup 15+} ion beam at the varying fluence (1 Multiplication-Sign 10{sup 11}, 5 Multiplication-Sign 10{sup 11}, and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2}). X-ray diffraction studies confirm the epitaxial growth of the deposited films, which is maintained even up to the highest fluence. Rise in the in-plane compressive strain has been observed after the irradiation. All the films exhibit metal-insulator transition, however, a systematic decrease in the transition temperature (T{sub MI}) has been observed after irradiation, which may be attributed to the increase in the in-plane compression. Raman spectroscopy data reveal that this reduction in T{sub MI}, with the irradiation, is related to the decrease in band gap due to the stress generated by the in-plane compressive strain.

  10. Spatial Inhomogeneity in Oxygen Modulated Potassium Tungsten Oxide Thin Films: implications for superconductivity and metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Munakata, Ko; Luna, Katherine; Tsukada, Akio; Risbud, Subhash; Geballe, Theodore; Beasley, Malcolm

    2012-02-01

    High quality potassium tungsten oxide (K0.33 WOy) films were synthesized by pulsed laser deposition followed by annealing in vacuum. Oxygen concentration modulated anomalous correlation of metal-insulator and superconductivity transitions were studied; a similar scenario was recently suggested in the literature [1] for polycrystalline rubidium tungsten oxide samples. Detailed studies of the transport properties below and above the superconducting transition temperature exhibit a diversity of unexpected behavior. Some of our results can be interpreted as a signature of reduced dimensionality in the ab-plane in oxygen-rich insulating samples, implying a formation of spatially inhomogeneous electronic structure. We compare such phenomenology to the behavior of other materials with strong electron-phonon interactions, and discuss its implication for the possible high temperature superconducting anomaly in sodium tungsten oxides reported in the literature [2]. [1] D. C. Ling et. al., J. Phys. Conf. Ser. 150, 052141 (2009). [2] S. Reich, and Y. Tsabba, Eur. Phys. J. B 9, 1 (1999).

  11. Metal-insulator transition in nanostructured SrTiO3/LaAlO3

    NASA Astrophysics Data System (ADS)

    Zhuang, Houlong; Cooper, Valentino R.; Ganesh, P.; Xu, Haixuan; Kent, P. R. C.

    2015-03-01

    It is well known that an insulator-to-metal transition occurs at SrTiO3/LaAlO3 epitaxial heterostructures when the number of LaAlO3 layers reaches a critical value of four. With first-principles calculations, we show that instead of requiring the threshold number of layers to trigger metallicity, the so-called 1+2 overlayer heterostructure also exhibits metallic states. Interestingly, we demonstrate that these metallic states form a two-dimensional electron gas at the overlayer heterostructure. We understand that these fascinating phenomena originate from a modified ``polar catastrophe'' model, where the overlayer heterostructure accumulates an electrostatic potential more rapidly than regular heterostructures, leading to the reduction of number of LAO layers. Using this model, we further show that the thinner 1+1 overlayer heterostructure exhibits a similar 2DEG. Our work provides a novel approach of inducing 2DEGs in oxide heterostructures, which are beneficial for modern electronics applications. HZ, PRCK, VRC and PG were sponsored by the LDRD at ORNL for the U.S. DOE and HX by the University of Tennessee JDRD and UT/ORNL-JIAM programs.

  12. Metal-insulator transition in Nd1-xEuxNiO3: Entropy change and electronic delocalization

    NASA Astrophysics Data System (ADS)

    Jardim, R. F.; Barbeta, V. B.; Andrade, S.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-01

    The metal-insulator (MI) phase transition in Nd1-xEuxNiO3, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat CP(T). The MI transition temperature (TMI) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dTMI/dP were found: (i) for x ≤ 0.15, dTMI/dP is nearly constant and ˜-4.3 K/kbar; (ii) for x ≥ 0.15, dTMI/dP increases with x and it seems to reach a saturation value ˜-6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of TMI. The entropy change (ΔS) at TMI for the sample x = 0, estimated by using the dTMI/dP data and the Clausius-Clapeyron equation, resulted in ΔS ˜ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔSM ˜ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and CP(T) data indicates that the entropy change at TMI is mainly due to the electronic delocalization and not related to the AF transition.

  13. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  14. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  15. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  16. Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics

    SciTech Connect

    Zhou You; Ramanathan, Shriram

    2012-10-01

    Monolithic integration of correlated oxide and nitride semiconductors may open up new opportunities in solid-state electronics and opto-electronics that combine desirable functional properties of both classes of materials. Here, we report on epitaxial growth and phase transition-related electrical properties of vanadium dioxide (VO{sub 2}) thin films on GaN epitaxial layers on c-sapphire. The epitaxial relation is determined to be (010){sub vo{sub 2}} parallel (0001){sub GaN} parallel (0001){sub A1{sub 2O{sub 3}}} and [100]{sub vo{sub 2}} parallel [1210]{sub GaN} parallel [0110]{sub A1{sub 2O{sub 3}}} from x-ray diffraction. VO{sub 2} heteroepitaxial growth and lattice mismatch are analyzed by comparing the GaN basal plane (0001) with the almost close packed corrugated oxygen plane in vanadium dioxide and an experimental stereographic projection describing the orientation relationship is established. X-ray photoelectron spectroscopy suggests a slightly oxygen rich composition at the surface, while Raman scattering measurements suggests that the quality of GaN layer is not significantly degraded by the high-temperature deposition of VO{sub 2}. Electrical characterization of VO{sub 2} films on GaN indicates that the resistance changes by about four orders of magnitude upon heating, similar to epitaxial VO{sub 2} films grown directly on c-sapphire. It is shown that the metal-insulator transition could also be voltage-triggered at room temperature and the transition threshold voltage scaling variation with temperature is analyzed in the framework of a current-driven Joule heating model. The ability to synthesize high quality correlated oxide films on GaN with sharp phase transition could enable new directions in semiconductor-photonic integrated devices.

  17. Disordered RuO2 exhibits two dimensional, low-mobility transport and a metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Krowne, C. M.; Charipar, K. M.; Bussmann, K.; Chervin, C. N.; Pala, I. R.; Rolison, D. R.

    2016-02-01

    The discovery of low-dimensional metallic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, and conducting oxide interfaces (e.g., LaAlO3/SrTiO3) has stimulated research into the nature of electronic transport in two-dimensional systems given that the seminal theory for transport in disordered metals predicts that the metallic state cannot exist in two dimensions (2D). In this report, we demonstrate the existence of a metal-insulator transition (MIT) in highly disordered RuO2 nanoskins with carrier concentrations that are one-to-six orders of magnitude higher and with mobilities that are one-to-six orders of magnitude lower than those reported previously for 2D oxides. The presence of an MIT and the accompanying atypical electronic characteristics place this form of the oxide in a highly diffusive, strong disorder regime and establishes the existence of a metallic state in 2D that is analogous to the three-dimensional case.

  18. Growth temperature-dependent metal-insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

    NASA Astrophysics Data System (ADS)

    Wang, Liangxin; Yang, Yuanjun; Zhao, Jiangtao; Hong, Bin; Hu, Kai; Peng, Jinlan; Zhang, Haibin; Wen, Xiaolei; Luo, Zhenlin; Li, Xiaoguang; Gao, Chen

    2016-04-01

    Vanadium dioxide (VO2) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO3) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal-insulator transition (MIT) behavior of the VO2 epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 102 to 104 with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thus larger grain size in the (010)-VO2/(111)-SrTiO3 epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO2 films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO2 epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO2 films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO2 can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.

  19. The Si(1 1 1) (7 × 7) reconstruction: A surface close to a Mott Hubbard metal insulator transition?

    NASA Astrophysics Data System (ADS)

    Fick, D.; Bromberger, C.; Jänsch, H. J.; Kühlert, O.; Schillinger, R.; Weindel, C.

    2006-09-01

    Li adsorption at extremely low coverages on the "metallic" Si(1 1 1)-(7 × 7) surface has been experimentally studied recently by β-NMR experiments. Instead of increasing linearly with the sample temperature, as expected for a metallic system, the relaxation rate α = 1/ T1 is almost constant in between 50 K and 300 K sample temperature and rises Arrhenius like above. In order to understand this behaviour in a transparent way a closed form analysis is presented using rectangular density of states distributions. The almost temperature independent relaxation rate below 300 K points to an extremely localized and thus narrow band (width about 10 meV) which pins the Fermi energy. Because of the steeply rising relaxation rate beyond 300 K it is located energetically within a gap (about 380 meV wide) in between a lower filled and an upper empty (Hubbard) band. In dynamical mean field theories based on Hubbard Hamiltonians this kind of density of states is typical for correlated electron systems close to a Mott-Hubbard metal-insulator transition.

  20. Metallic Si (111) - (7×7) -reconstruction: A surface close to a Mott-Hubbard metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Schillinger, R.; Bromberger, C.; Jänsch, H. J.; Kleine, H.; Kühlert, O.; Weindel, C.; Fick, D.

    2005-09-01

    Li adsorption at extremely low coverages ( 10-3 ML and below) on the metallic Si(111)-(7×7) surface has been studied by β -NMR experiments (measurement of T1 -times). Instead of increasing linearly with the sample temperature, as expected for a metallic system, the relaxation rate α=1/T1 is almost constant in between 50K and 300K sample temperature and rises considerably above. Comparison with T1 -times around 900K (observed with Li6 -NMR) excludes adsorbate diffusion as the cause of the relaxation rate. Thus the almost temperature independent relaxation rate below 300K points to an extremely localized and thus narrow band (width about 10meV ) which pins the Fermi energy. It is responsible for the metallicity of the (7×7) -reconstruction. Because of the steeply rising relaxation rate beyond 300K this narrow band is located energetically within a gap (approximately 100-500meV wide) in between a lower filled and an upper empty (Hubbard) band. Due to its extremely narrow width it can hardly be detected in photo electron experiments. In dynamical mean field theories based on Hubbard Hamiltonians this kind of density of states is typical for correlated electron systems close to a Mott-Hubbard metal-insulator transition.

  1. Electronic properties and the nature of metal-insulator transition in NdNiO3 prepared at ambient oxygen pressure

    NASA Astrophysics Data System (ADS)

    Hooda, M. K.; Yadav, C. S.

    2016-06-01

    We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m*~8me) in the metallic state indicates the narrow character of the 3d band. The electric conduction at low temperatures (T=2-20 K) is governed by the variable range hopping of the charge carriers.

  2. A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

    PubMed Central

    Lee, Hong Sub; Choi, Sun Gyu; Park, Hyung-Ho; Rozenberg, M. J.

    2013-01-01

    Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr0.7Ca0.3MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

  3. Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variation

    NASA Astrophysics Data System (ADS)

    Crunteanu, Aurelian; Fabert, Marc; Cornette, Julie; Colas, Maggy; Orlianges, Jean-Christophe; Bessaudou, Annie; Cosset, Françoise

    2014-03-01

    We present the vanadium dioxide (VO2) thin films deposition using e-beam evaporation of a vanadium target under oxygen atmosphere on different substrates (sapphire, Si, SiO2/Si…) and we focus on their electrical and optical properties variations as the material undergoes a metal-insulator transition under thermal and electrical stimuli. The phase transition induces extremely abrupt changes in the electronic and optical properties of the material: the electrical resistivity increases up to 5 orders of magnitude while the optical properties (transmission, reflection, refractive index) are drastically modified. We present the integration of these films in simple planar optical devices and we demonstrate electrical-activated optical modulators for visible-infrared signals with high discrimination between the two states. We will highlight a peculiar behavior of the VO2 material in the infrared and far infrared regions (2- 20 μm), namely its anomalous emissivity change under thermal- end electrical activation (negative differential emittance phenomenon) with potential applications in active coatings for thermal regulation, optical limiting or camouflage coatings.

  4. Metal-Insulator Transition in VO2 : A DFT +DMFT Perspective

    NASA Astrophysics Data System (ADS)

    Brito, W. H.; Aguiar, M. C. O.; Haule, K.; Kotliar, G.

    2016-07-01

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M1 and M2 monoclinic (insulating) phases of VO2 employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO2 , and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO2 : undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M2 phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M1 phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M1 phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments.

  5. Metal-Insulator Transition in VO_{2}: A DFT+DMFT Perspective.

    PubMed

    Brito, W H; Aguiar, M C O; Haule, K; Kotliar, G

    2016-07-29

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M_{1} and M_{2} monoclinic (insulating) phases of VO_{2} employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO_{2}, and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO_{2}: undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M_{2} phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M_{1} phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M_{1} phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments. PMID:27517782

  6. Tunable Anderson metal-insulator transition in quantum spin-Hall insulators

    NASA Astrophysics Data System (ADS)

    Chen, Chui-Zhen; Liu, Haiwen; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X. C.

    2015-06-01

    We numerically study disorder effects in the Bernevig-Hughes-Zhang (BHZ) model, and we find that the Anderson transition of a quantum spin-Hall insulator (QSHI) is determined by model parameters. The BHZ Hamiltonian is equivalent to two decoupled spin blocks that belong to the unitary class. In contrast to the common belief that a two-dimensional unitary system scales to an insulator except at certain critical points, we find, through calculations scaling properties of the localization length, level statistics, and participation ratio, that a possible exotic metallic phase emerges between the QSHI and normal insulator phases in the InAs/GaSb-type BHZ model. On the other hand, direct transition from a QSHI to a normal insulator is found in the HgTe/CdTe-type BHZ model. Furthermore, we show that the metallic phase originates from the Berry phase and can survive both inside and outside the gap.

  7. Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates.

    PubMed

    Hou, Jiwei; Wang, Xi; Fu, Deyi; Ko, Changhyun; Chen, Yabin; Sun, Yufei; Lee, Sangwook; Wang, Kevin X; Dong, Kaichen; Sun, Yinghui; Tongay, Sefaattin; Jiao, Liying; Yao, Jie; Liu, Kai; Wu, Junqiao

    2016-08-01

    The atomic thickness and flatness allow properties of 2D semiconductors to be modulated with influence from the substrate. Reversible modulation of these properties requires an "active," reconfigurable substrate, i.e., a substrate with switchable functionalities that interacts strongly with the 2D overlayer. In this work, the photoluminescence (PL) of monolayer molybdenum disulfide (MoS2 ) is modulated by interfacing it with a phase transition material, vanadium dioxide (VO2 ). The MoS2 PL intensity is enhanced by a factor of up to three when the underlying VO2 undergoes the thermally driven phase transition from the insulating to metallic phase. A nonvolatile, reversible way to rewrite the PL pattern is also demonstrated. The enhancement effect is attributed to constructive optical interference when the VO2 turns metallic. This modulation method requires no chemical or mechanical processes, potentially finding applications in new switches and sensors. PMID:27335137

  8. Unusual M2-mediated metal-insulator transition in epitaxial VO2 thin films on GaN substrates

    NASA Astrophysics Data System (ADS)

    Yang, Hyoung Woo; Inn Sohn, Jung; Yang, Jae Hoon; Jang, Jae Eun; Cha, Seung Nam; Kim, Jongmin; Kang, Dae Joon

    2015-01-01

    We report on the epitaxial growth of vanadium dioxide (\\text{VO}2) thin films on (0001) GaN substrates using a radio frequency magnetron sputtering method and discuss their unusual M2-mediated metal-insulator transition (MIT) properties. We found that large lattice misfits between the \\text{VO}2 film and the GaN substrate could favor the stabilization of the intermediate insulating \\text{M}2 phase, which is known to be observed only in either doped or uniaxially strained samples. We demonstrated that the MIT in \\text{VO}2 films on GaN substrates could be mediated via a monoclinic \\text{M}2 phase during the transition from a monoclinic \\text{M}1 to a rutile R phase. This was confirmed by temperature-dependent Raman studies that exhibited both an evident upshift of a high-frequency phonon mode (ω\\text{V-O}) from 618 \\text{cm}-1 (\\text{M}1) to 645 \\text{cm}-1 (\\text{M}2) and a distinct peak splitting of a low-frequency phonon mode (ω\\text{V-V}) at 221 \\text{cm}-1 (\\text{M}2) for increasing temperatures. Moreover, a resistance change of four orders of magnitude was observed for \\text{VO}2 thin films on GaN substrates, being indicative of the high quality of \\text{VO}2 thin films. This study may offer great opportunities not only to improve the understanding of M2-mediated MIT behavior in \\text{VO}2 thin films, but also to realize novel electronic and optoelectronic devices.

  9. Universal role of quantum uncertainty in Anderson metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Cheng, W. W.; Zhang, Z. J.; Gong, L. Y.; Zhao, S. M.

    2016-07-01

    We explore quantum uncertainty, based on Wigner-Yanase skew information, in various one-dimensional single-electron wave functions. For the power-law function and eigenfunctions in the Aubry-André model, the electronic localization properties are well-defined. For them, we find that quantum uncertainty is relatively small and large for delocalized and localized states, respectively. And around the transition points, the first-order derivative of the quantum uncertainty exhibits singular behavior. All these characters can be used as signatures of the transition from a delocalized phase to a localized one. With this criterion, we also study the quantum uncertainty in one-dimensional disorder system with long-range correlated potential. The results show that the first-order derivative of spectrum-averaged quantum uncertainty is minimal at a certain correlation exponent αm for a finite system, and has perfect finite-size scaling behaviors around αm. By extrapolating αm, the threshold value αc ≃ 1.56 ± 0.02 is obtained for the infinite system. Thus we give another perspective and propose a consistent interpretation for the discrepancies about localization property in the long-range correlated potential model. These results suggest that the quantum uncertainty can provide us with a new physical intuition to the localization transition in these models.

  10. Disproportionation, Metal-Insulator Transition, and Critical Interaction Strength in Na1/2CoO2

    NASA Astrophysics Data System (ADS)

    Kunes, Jan

    2006-03-01

    Spontaneous breaking of symmetry is one of the key concepts of solid state physics related to phase transitions. Charge/spin density wave, or charge/spin ordering if the propagation vector is commensurate, are notorious examples of broken symmetry. The charge disproportionation in Na0.5CoO2 is the main theme of the present work. The results of LDA+U calculations will be presented, exhibiting a charge disproportionation transition at U 3eV. NaxCoO2 attracted considerable attention mainly due to superconductivity of its hydrated form Na0.3CoO2.1.3H2O [1]. Besides the superconductivity NaxCoO2 exhibits several intriguing properties throughout its phase diagram, such crossover from Pauli-like to Curie-Weiss susceptibility at x=0.5, spin-density wave around x=0.7 or several phase transitions for x=0.5 including metal-insulator transition, charge ordering and magnetic ordering [2]. The NaxCoO2 lattice consists of triangular CoO2 layers separated by Na layer. The mobility of Na ions and fractional occupation of Na sublattice provides an additional complication. Using LDA+U functional within FPLO [3] bandstructure method we have performed series of supercell calculations allowing for breaking of the symmetry between different Co sites. We have found that for large enough, but physically realistic, values of the on-site Coulomb interaction U the Co sublattice disproportionates into sites with formal valencies Co^4+ and Co^3+. We have found that at the same time a gap opens in the excitation spectrum. Details of the bandstructure across the transition as well as the driving forces of the transition in the LDA+U mean field picture will be discussed. [1] K. Takada et al., Nature (London) 422, 53 (2003).[2] M. L. Foo et al., Phys. Rev. Lett. 92, 247001 (2004).[3] K. Koepernik and H. Eschrig, Phys. Rev. B 59, 1743 (1999).

  11. Covalency and the metal-insulator transition in titanate and vanadate perovskites

    NASA Astrophysics Data System (ADS)

    Dang, Hung T.; Millis, Andrew J.; Marianetti, Chris A.

    2014-04-01

    A combination of density functional and dynamical mean-field theory is applied to the perovskites SrVO3, LaTiO3, and LaVO3. We show that DFT + DMFT in conjunction with the standard fully localized-limit (FLL) double-counting predicts that LaTiO3 and LaVO3 are metals even though experimentally they are correlation-driven ("Mott") insulators. In addition, the FLL double counting implies a splitting between oxygen p and transition metal d levels, which differs from experiment. Introducing into the theory an ad hoc double counting correction, which reproduces the experimentally measured insulating gap leads also to a p-d splitting consistent with experiment if the on-site interaction U is chosen in a relatively narrow range (˜6±1 eV). The results indicate that these early transition metal oxides will serve as critical test for the formulation of a general ab initio theory of correlated electron metals.

  12. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    SciTech Connect

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-07

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  13. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    NASA Astrophysics Data System (ADS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  14. Exotic topological states near a quantum metal-insulator transition in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming

    Pyrochlore iridates have attracted great interest as prime candidates that may host topologically nontrivial states, spin ice ordering and quantum spin liquid states, in particular through the interplay between different degrees of freedom, such as local moments and mobile electrons. Based on our extensive study using our high quality single crystals, we will discuss such examples, i.e. chiral spin liquid in a quadratic band touching state, Weyl semimetallic state and chiral domain wall transport nearby a quantum insulator-semimetal transition in pyrochlore iridates. This work is based on the collaboration with Nakatsuji Satoru, Kohama Yoshimitsu, Tomita Takahiro, Kindo Koichi, Jun J. Ishikawa, Balents Leon, Ishizuka Hiroaki, Timothy H. Hsieh. ZM. Tian was supported by JSPS Postdoctoral Fellowship (No.P1402).

  15. Volume-based considerations for the metal-insulator transition of CMR oxides

    SciTech Connect

    Neumeier, J.J.; Hundley, M.F.; Cornelius, A.L.; Andres, K.

    1998-03-01

    The sensitivity of {rho} [electrical resistivity] to changes in volume which occur through: (1) applied pressure, (2) variations in temperature, and (3) phase transitions, is evaluated for some selected CMR oxides. It is argued that the changes in volume associated with phase changes are large enough to produce self pressures in the range of 0.18 to 0.45 GPa. The extreme sensitivity of the electrical resistivity to pressure indicates that these self pressures are responsible for large features in the electrical resistivity and are an important component for occurrence the metallicity below {Tc}. It is suggested that this is related to a strong volume dependence of the electron phonon coupling in the CMR oxides.

  16. Structurally-driven metal-insulator transition in Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} (0{<=}x<0.14): A single crystal X-ray diffraction study

    SciTech Connect

    Qi, T.F.; Ge, M.; Korneta, O.B.; Parkin, S.; De Long, L.E.; Cao, G.

    2011-04-15

    Correlation between structure and transport properties are investigated in high-quality single-crystals of Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} with 0metal-insulator (MI) transition at 357 K. Upon chromium doping on the ruthenium site, the metal-insulator transition temperature (T{sub MI}) was drastically reduced, and is related to the competition between structural changes that occur upon Cr doping and with decreasing temperature. A strong suppression of structural distortions with increasing Cr substitution was identified. No clear T{sub MI} can be observed when x>13.5% and the system behaves as an insulator. Such a large, sharp metal-insulator transition and tuneable transition temperature may have potential applications in electronic devices. -- Graphical abstract: The metal-insulator transition temperature (T{sub MI}) was drastically reduced by Cr doping, and is closely related to the distortion of structure. Display Omitted Research highlights: {yields} The metal-insulator transition temperature (T{sub MI}) was drastically reduced by doping Cr into Ca{sub 2}RuO{sub 4} single crystal. {yields} Detailed single crystal structural analysis provided important insight into this structurally-driven metal-insulator transition. {yields} Negative Volume Thermal Expansion (NVTE) was observed with increasing temperature.

  17. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    NASA Astrophysics Data System (ADS)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  18. Directing colloidal assembly and a metal-insulator transition using quenched-disordered polymeric networks

    NASA Astrophysics Data System (ADS)

    Phan, Anh; Jadrich, Ryan; Schweizer, Kenneth

    2015-03-01

    Replica integral equation and effective medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly and realize equilibrium states of high electrical conductivity at low physical volume fractions. This is achieved by employing variable mesh size networks of rigid rod or semiflexible polymers as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low dimensional network and fluctuation-driven colloid clustering in the pore spaces, distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. Polymer conformational fluctuations are found to significantly modify the physical adsorption process and hence the ability of colloids to organize along the filamentary network strands. Qualitatively new physical behavior can emerge as the pore size approaches the colloid diameter, reflecting strong frustrating constraints of the template on colloidal assembly.

  19. Heavy holes localization, metal-insulator transition and superconductivity of HTSC oxides

    SciTech Connect

    Golovashkin, A.I.; Anshukova, N.V.; Ivanova, L.I.; Maljuchkov, O.T.; Rusakov, A.P.

    1996-12-31

    On the basis of experimental studies of specific heat, magnetic properties and thermal expansion it was shown that dielectric-metal phase transition was the consequence of delocalization of heavy holes located on metal-apical oxygen bonds in the high-temperature superconducting (HTSC) oxide systems. The dielectric gaps in electronic spectrum of the oxide systems appear owing to the charge density waves (CDW) of the ordered arrays of such localized (heavy) holes. The CDW is the microscopic reason of the negative thermal expansion observed in dielectric phases of some HTSC systems. The free carriers introduced in the oxide systems by doping can couple through excitations of these localized holes (local bosons). Such free carriers pairing leads to the high-temperature superconductivity with small coherence length and anomalous (with positive curvature) temperature dependence of H{sub c2}(T). The suggested localized holes on the metal-apical oxygen bonds and local bosons in addition to the usual phonons are the basis for the explanation of the experimental data presented in this report.

  20. Topological textures and metal-insulator transition in Reentrant Integer Quantum Hall Effect: role of disorder

    NASA Astrophysics Data System (ADS)

    Lyanda-Geller, Yuli; Simion, George

    2015-03-01

    We investigate a ground state of the two-dimensional (2D) electron liquid in the presence of disorder for Landau level filling factors, for which the re-entrant integer quantum Hall effect is observed. Our particular interest is the range of filling factors, which in a clean 2D system is favorable to formation of the two-electron (2e) bubble crystal. For the smooth random potential due to charged impurities placed far away from the 2D gas, the ground state is a lightly distorted 2e bubble crystal. However, for positively or negatively charged residual impurities located approximately within about three magnetic lengths from the 2D electrons, the ground state contains charged 2e complexes formed either by positively charged impurity and 3e defect bubble, or negatively charged impurity and 2e defect bubble. In the vicinity of 1e and 3e defect bubbles, the 2e bubbles of the crystal change their shape from round to elongated forming hedgehog (for 1e defect) or vortex (for 3e defect) textures. The topological textures due to these complexes interact with vortex and hedgehog excitations, generated as temperature increases that are not bound by residual impurities. The temperature of insulator to metal transition calculated with both bound and unbound defects agrees with experiment. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.

  1. Probing the Metal-Insulator Transition in BaTiO3 by Electrostatic Doping

    NASA Astrophysics Data System (ADS)

    Raghavan, Santosh; Zhang, Jack Y.; Shoron, Omor F.; Stemmer, Susanne

    2016-07-01

    The metal-to-insulator transition in BaTiO3 is investigated using electrostatic doping, which avoids effects from disorder and strain that would accompany chemical doping. SmTiO3/BaTiO3/SrTiO3 heterostructures are doped with a constant sheet carrier density of 3 ×1014 cm-2 that is introduced via the polar SmTiO3/BaTiO3 interface. Below a critical BaTiO3 thickness, the structures exhibit metallic behavior with high carrier mobilities at low temperatures, similar to SmTiO3/SrTiO3 interfaces. Above this thickness, data indicate that the BaTiO3 layer becomes ferroelectric. The BaTiO3 lattice parameters increase to a value consistent with a strained, tetragonal unit cell, the structures are insulating below ˜125 K , and the mobility drops by more than an order of magnitude, indicating self-trapping of carriers. The results shed light on the interplay between charge carriers and ferroelectricity.

  2. Tunneling Spectroscopy of Amorphous Magnetic Rare Earth-Si Alloys near the Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Xiong, P.; Zink, B. L.; Tran, M. Q.; Gebala, A. E.; Wilcox, E. M.; Hellman, F.; Dynes, R. C.

    1997-03-01

    Amorphous dilute magnetic semiconductors exhibit striking differences in the electrical and magneto-transport behavior from their crystalline or nonmagnetic analogs.(F. Hellman et al., Phys. Rev. Lett. 77, 4652 (1996).) Magnetic impurities cause a large suppression of conductivity below 50 K in a-Si_xGd_1-x and a-Si_xTb_1-x relative to the nonmagnetic a-Si_xY_1-x (x ~ 0.85-0.9). Application of a magnetic field increases the conductivity by orders of magnitude. We have fabricated good quality tunnel junctions on a-Si:Gd and the nonmagnetic a-Si:Y to probe the electronic density of states in these two systems. We present the results of the tunneling spectroscopy and its magnetic field dependence for a series of the two alloys at different compositions. We will discuss the correlation between the tunneling spectra and the transport properties and its implications on the possible origin of the magnetic field tuned insulator-metal transition in a-Si:Gd. Research Supported by ONR Grant No. N000149151320 and NSF Grant No. DMR-9208599.

  3. The Unusual Metal-Insulator Transition in Ca(2-x)Sr(x)RuO(4)

    NASA Astrophysics Data System (ADS)

    Rice, T. Maurice

    2002-03-01

    The isoelectronic compounds Ca_2-xSr_xRuO4 offer a rare opportunity to follow the evolution of the electronic structure from a multiband metal, Sr_2RuO_4, to a Mott insulator, Ca_2RuO_4. The evolution is not at all monotonic but proceeds through a series of intermediate regions with unexpected behavior [1]. Sr_2RuO4 is a good metal with the 4 electrons in the t_2g-subshell of the Ru^4+-ions distributed equally in 3 bands. These in turn separate into a d_xy-band which disperses in both directions in the RuO_2-planes and d_xz/d_yz-bands dispersing only in one direction. The hybridization between these components occurs only through very weak interplanar processes. Substituting Ca for Sr leads to band narrowing through a rotation of the RuO_4-octahedra. A series of electronic structure calculations [2] using the LDA+DMFT method to incorporate strong correlations, predict an unusual state with 3 electrons localizing in the narrower d_xz/d_yz bands while the last electron remains itinerant in the broader d_xy-band. The observation of a strongly enhanced and temperature dependent spin susceptibility in the metallic state at x=0.5 is attributed to the S=1/2 local moments of the localized hole in the d_xz/d_yz-orbitals. The superexchange interaction between the local moments is strongly dependent on the specific orbital occupation and so glassy behavior in the orbital ordering can account for the glassy behavior observed in the susceptibility in the range 0.2 < x < 0.5. The final transition to a Mott insulator at x < 0.2 is driven by a compression of the RuO_4-octahedra and a switch to an electronic configuration with a filled d_xy-orbital and 2 electrons in the d_xz/d_yz orbitals which has a S=1 local moment expected for a Ru^4+-ion. [1] S. Nakatsuji and Y. Maeno, Phys. Rev. Lett. 84, 2666 (2000). [2] V.I. Anisimov, I.A. Nekrasov, D.E. Kondakov, T.M. Rice, and M. Sigrist, cond-mat0107095 and Eur. Phys. Jour. B (in press).

  4. Metal-Insulator Transitions.

    ERIC Educational Resources Information Center

    Mott, Nevill

    1978-01-01

    Explains how changes in temperature, pressure, magnetic field or alloy composition can affect the electronic band structure of substances, leading in some cases to dramatic changes in conductivity. (GA)

  5. First-principles study of Sr2Ir1-xRhxO4: charge transfer, spin-orbit coupling change, and the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Sim, Jae-Hoon; Kim, Heung-Sik; Han, Myung Joon

    2015-03-01

    Using first-principles density functional theory (DFT) calculations, we investigated the electronic structure of Rh-doped iridate, Sr2Ir1-xRhxO4 for which the doping (x) dependent metal-insulator transition (MIT) has been reported experimentally and the controversial discussion developed regarding the origin of this transition. Our DFT+U calculation shows that the value of < L . S > remains largely intact over the entire doping range considered here (x = 0 . 0 , 0 . 125 , 0 . 25 , 0 . 50 , 0 . 75 , and 1 . 0) in good agreement with the branching ratio measured by x-ray absorption spectroscopy. Also contrary to a previous picture to explain MIT based on the charge transfer between the transition-metal sites, our calculation clearly shows that those sites remain basically isoelectronic while the impurity bands of predominantly rhodium character are introduced near the Fermi level. As the doping increases, this impurity band overlaps with lower Hubbard band of iridium, leading to metal-insulator transition. The results will be discussed with comparison to the case of Ru doping. Computational resources were suported by The National Institute of Supercomputing and Networking/Korea Institute of Science and Technology Information with supercomputing resources including technical spport (Grant No. KSC-2013-C2-23).

  6. Fano response induced by the interference between localized plasmons and interface reflections in metal-insulator-metal waveguide structure

    NASA Astrophysics Data System (ADS)

    Li, Hong-Ju; Wang, Ling-Ling; Zhai, Xiang

    2016-06-01

    The original Fano response induced by the interference between the localized plasmons and interface-reflected surface plasmon polaritons in a single metal-insulator-metal waveguide with two parallel separated metal strips is predicted theoretically through the coupled mode theory combined with the Fano function. The prominent asymmetric line shape resulting from the coupling between the discrete dipole resonance formed between metal strips and an interface-reflected-induced continuum is confirmed by the performed numerical simulations. The novel Fano spectrum is tuned easily by varying the length and coupling distance of metal strips. By introducing another separated metal strip, the outstanding double Fano behavior is obtained, and the corresponding underlying physics is illustrated. In particular, based on the performed refractive index sensing spectra, the high sensitivity of 855 nm/RIU and figure of merit up to 30 are achieved via the double Fano resonance. Undoubtedly, such ingenious structure may benefit the fabrications of nano-integrated plasmonic devices for optical switching and sensing.

  7. Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2016-02-01

    Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

  8. Magnetic, electrical, and structural studies on the metal-insulator transition in CuIr2S4-xSex (0⩽x⩽4)

    NASA Astrophysics Data System (ADS)

    Somasundaram, P.; Kim, D.; Honig, J. M.; Pekarek, T. M.; Gu, T.; Goldman, A. I.

    1998-06-01

    Magnetic transitions and structural transformations have been investigated in CuIr2S4-xSex (0⩽x⩽4). It is found from magnetic, resistivity, and thermopower studies that the transition temperature decreases as the Se concentration is increased. The change in magnetization occurs over a 10-15 K range at lower Se concentration, while it broadens to 30 K for an Se concentration of x=0.5. Low-temperature studies proved that beyond the composition corresponding to x=0.5 the cubic structure is stabilized. The metal-insulator transition beyond the x=0.5 composition arises from the electronic rather than from the lattice contribution.

  9. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions.

    PubMed

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-14

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases. PMID:27083708

  10. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions

    NASA Astrophysics Data System (ADS)

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-01

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases.

  11. Low-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal-insulator transition

    SciTech Connect

    Okimura, Kunio; Mian, Md.Suruz

    2012-09-15

    The authors achieved oriented growth of vanadium dioxide (VO{sub 2}) films on CoCrTa metal template grown on an Si substrate. Low-temperature ({approx}250 Degree-Sign C) deposition of VO{sub 2} films using inductively coupled-plasma-assisted sputtering technique realized an abrupt interface between VO{sub 2} and CoCrTa layers, suppressing the oxidation and diffusion of metal components. The films revealed a metal-insulator transition with resistance change of over 2 orders of magnitude. The CoCrTa film, in which Co hexagonal crystalline grains with c-axis orientation were surrounded by segregated Cr and Ta, serves for the oriented growth of VO{sub 2} crystalline film, enabling higher orders of transition in resistance and low voltage switching, even for the vertical (out-of-plane) direction.

  12. Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO3 thin films grown by polymer-assisted deposition

    NASA Astrophysics Data System (ADS)

    Yao, Dan; Shi, Lei; Zhou, Shiming; Liu, Haifeng; Zhao, Jiyin; Li, Yang; Wang, Yang

    2016-01-01

    The epitaxial NdNi1-xCoxO3 (0 ≤ x ≤ 0.10) thin films on (001) LaAlO3 and (001) SrTiO3 substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO3 thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (TMI) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

  13. Detailed mapping of the local Ir4+ dimers through the metal-insulator transitions of CuIr2S4 thiospinel by X-ray atomic pair distribution function measurements.

    PubMed

    Božin, E S; Masadeh, A S; Hor, Y S; Mitchell, J F; Billinge, S J L

    2011-01-28

    The evolution of the short-range structural signature of the Ir4+ dimer state in CuIr2S4 thiospinel has been studied across the metal-insulator phase transitions as the metallic state is induced by temperature, Cr doping, and x-ray fluence. An atomic pair distribution function (PDF) approach reveals that there are no local dimers that survive into the metallic phase when this is invoked by temperature and doping. The PDF shows Ir4+ dimers when they exist, regardless of whether or not they are long-range ordered. At 100 K, exposure to a 98 keV x-ray beam melts the long-range dimer order within a few seconds, though the local dimers remain intact. This shows that the metallic state accessed on warming and doping is qualitatively different from the state obtained under x-ray irradiation. PMID:21405330

  14. Testing the universality of the many-body metal-insulator transition by time evolution of a disordered one-dimensional ultracold fermionic gas

    NASA Astrophysics Data System (ADS)

    Tezuka, Masaki; García-García, Antonio M.

    2012-03-01

    It is now possible to study experimentally the combined effect of disorder and interactions in cold atom physics. Motivated by these developments we investigate the dynamics around the metal-insulator transition (MIT) in a one-dimensional Fermi gas with short-range interactions in a quasiperiodic potential by the time-dependent density-matrix renormalization group technique. By tuning disorder and interactions we study the MIT from the weakly to the strongly interacting limit. The MIT is not universal as time evolution, well described by a process of anomalous diffusion, depends qualitatively on the interaction strength. By using scaling ideas we relate the parameter that controls the diffusion process with the critical exponent that describes the divergence of the localization length. In the limit of strong interactions theoretical arguments suggest that the motion at the MIT tends to ballistic and critical exponents approach mean-field predictions.

  15. Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates

    SciTech Connect

    Martens, Koen; Aetukuri, Nagaphani; Jeong, Jaewoo; Samant, Mahesh G.; Parkin, Stuart S. P.

    2014-02-24

    Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750  °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.

  16. Cu(Ir1 − xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    PubMed Central

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-01-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 − xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states. PMID:24518384

  17. Disorder Driven Metal-Insulator Transition in BaPb1-xBixO3 and Inference of Disorder-Free Critical Temperature

    NASA Astrophysics Data System (ADS)

    Luna, Katherine; Giraldo-Gallo, Paula; Geballe, Theodore; Fisher, Ian; Beasley, Malcolm

    2014-10-01

    We performed point-contact spectroscopy tunneling measurements on single crystal BaPb1-xBixO3 for 0≤x ≤0.28 at temperatures T =2-40 K and find a suppression in the density of states at low bias voltages that is characteristic of disordered metals. Both the correlation gap and the zero-temperature conductivity are zero at a critical concentration xc=0.30. Not only does this suggests that a disorder driven metal-insulator transition occurs before the onset of the charge disproportionated charge density wave insulator, but we also explore whether a scaling theory is applicable. In addition, we estimate the disorder-free critical temperature and compare these results to Ba1-xKxBiO3.

  18. Metal-insulator transition characteristics of vanadium dioxide thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture

    NASA Astrophysics Data System (ADS)

    Bharathi, R.; Naorem, Rameshwari; Umarji, A. M.

    2015-08-01

    We report the synthesis of high quality vanadium dioxide (VO2) thin films by a novel spray pyrolysis technique, namely ultrasonic nebulized spray pyrolysis of aqueous combustion mixture (UNSPACM). This simple and cost effective two step process involves synthesis of a V2O5 film on an LaAlO3 substrate followed by a controlled reduction to form single phase VO2. The formation of M1 phase (P21/c) is confirmed by Raman spectroscopic studies. A thermally activated metal-insulator transition (MIT) was observed at 61 ^\\circ C, where the resistivity changes by four orders of magnitude. Activation energies for the low conduction phase and the high conduction phase were obtained from temperature variable resistance measurements. The infrared spectra also show a dramatic change in reflectance from 13% to over 90% in the wavelength range of 7-15 μ m. This indicates the suitability of the films for optical switching applications at infrared frequencies.

  19. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.

    PubMed

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  20. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    NASA Astrophysics Data System (ADS)

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-06-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain.

  1. Cu(Ir1 - xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-02-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 - xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states.

  2. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    PubMed Central

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  3. Fluctuations of the order parameter in R 0.55Sr0.45MnO3 manganites near the metal-insulator phase transition

    NASA Astrophysics Data System (ADS)

    Bukhanko, F. N.; Bukhanko, A. F.

    2013-06-01

    The magnetic phase transformations induced by changes of the composition, external magnetic field strength, and temperature in manganites with a nearly half-filled conduction band in the vicinity of the metal-insulator phase transition have been investigated experimentally. It has been found that the substitution of rare-earth ions (Sm) for Nd ions with a larger ionic radius in R 0.55Sr0.45MnO3 manganites leads to a linear decrease in the Curie temperature T C from 270 to 130 K and a transformation of the second-order ferromagnetic (FM) phase transition into a first-order phase transition. The results of measurements of the alternating-current (ac) magnetic susceptibility in the (Nd1 - y Sm y )0.55Sr0.45MnO3 system indicate the existence of a Griffiths-like phase in samples with a samarium concentration y > 0.5 in the temperature range T C < T < T* (where T* ˜ 220 K). For samples with y > 0.5, the magnetization isotherms at temperatures above T C exhibit specific features in the form of reversible metamagnetic phase transitions associated with strong fluctuations of the short-range ferromagnetic order in the system of Mn spins in the high-temperature Griffiths phase consisting of ferromagnetic clusters. According to the results of measurements of the ac magnetic susceptibility in the (Sm1 - y Gd y )0.55Sr0.45MnO3 system for a gadolinium concentration y = 0.5, there is an antiferromagnetic (AFM) phase with an unusually low critical temperature of the spin ordering T N ≊ 48.5 K. An increase in the external static magnetic field at 4.2 K leads to an irreversible induction of the ferromagnetic phase, which is stable in the temperature range 4.2-60 K. In the temperature range 60 K < T < 150 K, there exists a high-temperature Griffiths-like phase consisting of clusters (correlations) with a local charge/orbital ordering. The metastable antiferromagnetic structure is retained in samples with gadolinium concentrations y = 0.6 and 0.7, but it is destroyed with a further

  4. Distinctive Finite Size Effects on the Phase Diagram and Metal-insulator Transitions of Tungsten-doped Vanadium(IV) Oxide

    SciTech Connect

    L Whittaker; T Wu; C Patridge; S Ganapathy; S Banerjee

    2011-12-31

    The influence of finite size in altering the phase stabilities of strongly correlated materials gives rise to the interesting prospect of achieving additional tunability of solid-solid phase transitions such as those involved in metal-insulator switching, ferroelectricity, and superconductivity. We note here some distinctive finite size effects on the relative phase stabilities of insulating (monoclinic) and metallic (tetragonal) phases of solid-solution W{sub x}V{sub 1-x}O{sub 2}. Ensemble differential scanning calorimetry and individual nanobelt electrical transport measurements suggest a pronounced hysteresis between metal {yields} insulator and insulator {yields} metal phase transformations. Both transitions are depressed to lower critical temperatures upon the incorporation of substitutional tungsten dopants but the impact on the former transition seems far more prominent. In general, the depression in the critical temperatures upon tungsten doping far exceeds corresponding values for bulk W{sub x}V{sub 1-x}O{sub 2} of the same composition. Notably, the depression in phase transition temperature saturates at a relatively low dopant concentration in the nanobelts, thought to be associated with the specific sites occupied by the tungsten substitutional dopants in these structures. The marked deviations from bulk behavior are rationalized in terms of a percolative model of the phase transition taking into account the nucleation of locally tetragonal domains and enhanced carrier delocalization that accompany W{sup 6+} doping in the W{sub x}V{sub 1-x}O{sub 2} nanobelts.

  5. Tunable metal-insulator transition in Nd1-xYxNiO3 (x = 0.3, 0.4) perovskites thin film at near room temperature

    NASA Astrophysics Data System (ADS)

    Shao, Tao; Qi, Zeming; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Wang, Yu; Zhang, Guobin; Liu, Miao

    2015-07-01

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd1-XYXNiO3 (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340-360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  6. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

    PubMed

    Kim, Min-Woo; Ha, Sung-Soo; Seo, Okkyun; Noh, Do Young; Kim, Bong-Joong

    2016-07-13

    Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT. PMID:27253750

  7. Phonon mode spectroscopy, electron-phonon coupling, and the metal-insulator transition in quasi-one-dimensional M2Mo6Se6

    NASA Astrophysics Data System (ADS)

    Petrović, A. P.; Lortz, R.; Santi, G.; Decroux, M.; Monnard, H.; Fischer, Ø.; Boeri, L.; Andersen, O. K.; Kortus, J.; Salloum, D.; Gougeon, P.; Potel, M.

    2010-12-01

    We present electronic-structure calculations, electrical resistivity data, and the first specific-heat measurements in the normal and superconducting states of quasi-one-dimensional M2Mo6Se6 (M=Tl,In,Rb) . Rb2Mo6Se6 undergoes a metal-insulator transition at ˜170K : electronic-structure calculations indicate that this is likely to be driven by the formation of a dynamical charge-density wave. However, Tl2Mo6Se6 and In2Mo6Se6 remain metallic down to low temperature, with superconducting transitions at Tc=4.2K and 2.85 K, respectively. The absence of any metal-insulator transition in these materials is due to a larger in-plane bandwidth, leading to increased interchain hopping which suppresses the density wave instability. Electronic heat-capacity data for the superconducting compounds reveal an exceptionally low density of states DEF=0.055 states eV-1atom-1 , with BCS fits showing 2Δ/kBTc≥5 for Tl2Mo6Se6 and 3.5 for In2Mo6Se6 . Modeling the lattice specific heat with a set of Einstein modes, we obtain the approximate phonon density of states F(ω) . Deconvolving the resistivity for the two superconductors then yields their electron-phonon transport coupling function αtr2F(ω) . In Tl2Mo6Se6 and In2Mo6Se6 , F(ω) is dominated by an optical “guest ion” mode at ˜5meV and a set of acoustic modes from ˜10 to 30 meV. Rb2Mo6Se6 exhibits a similar spectrum; however, the optical phonon has a lower intensity and is shifted to ˜8meV . Electrons in Tl2Mo6Se6 couple strongly to both sets of modes, whereas In2Mo6Se6 only displays significant coupling in the 10-18 meV range. Although pairing is clearly not mediated by the guest ion phonon, we believe it has a beneficial effect on superconductivity in Tl2Mo6Se6 , given its extraordinarily large coupling strength and higher Tc compared to In2Mo6Se6 .

  8. Hopping conduction in p-type MoS{sub 2} near the critical regime of the metal-insulator transition

    SciTech Connect

    Park, Tae-Eon; Jang, Chaun E-mail: presto@kist.re.kr; Suh, Joonki; Wu, Junqiao; Seo, Dongjea; Park, Joonsuk; Lin, Der-Yuh; Huang, Ying-Sheng; Choi, Heon-Jin; Chang, Joonyeon E-mail: presto@kist.re.kr

    2015-11-30

    We report on temperature-dependent charge and magneto transport of chemically doped MoS{sub 2}, p-type molybdenum disulfide degenerately doped with niobium (MoS{sub 2}:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T{sup −0.25}, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS{sub 2}:Nb on the insulating side of the M-I transition.

  9. Interfacial reaction between metal-insulator transition material NbO2 thin film and wide band gap semiconductor GaN

    NASA Astrophysics Data System (ADS)

    Posadas, Agham; Kvit, Alexander; Demkov, Alexander

    Materials that undergo a metal-insulator transition (MIT) are potentially useful for a wide variety of applications including electronic and opto-electronic switches, memristors, sensors, and coatings. In most such materials, the MIT is driven by temperature. In one such material, NbO2, the MIT mechanism is primarily of the Peierls-type, in which the dimerization of the Nb atoms without electron correlation causes the transition from metallic to semiconducting. We describe our initial work at combining NbO2 and GaN in epitaxial form, which could be potentially useful in resistive switching devices operating at very high temperatures. We grow NbO2 films on GaN(0001)/Si(111) substrates using reactive molecular beam epitaxy from a metal evaporation source and molecular oxygen. X-ray diffraction shows that the films are found to grow with a single out of plane orientation but with three symmetry-related orientation domains in the plane. In situ x-ray photoelectron spectroscopy confirms that the phase pure NbO2 is formed but that a chemical reaction occurs between the GaN and NbO2 during the growth forming a polycrystalline interfacial layer. We perform STEM-EELS analysis of the film and the interface to further elucidate their chemical and structural properties.

  10. Charge disproportionation without charge transfer in the rare-earth-element nickelates as a possible mechanism for the metal-insulator transition.

    PubMed

    Johnston, Steve; Mukherjee, Anamitra; Elfimov, Ilya; Berciu, Mona; Sawatzky, George A

    2014-03-14

    We study a model for the metal-insulator (M-I) transition in the rare-earth-element nickelates RNiO3, based upon a negative charge transfer energy and coupling to a rocksaltlike lattice distortion of the NiO6 octahedra. Using exact diagonalization and the Hartree-Fock approximation we demonstrate that electrons couple strongly to these distortions. For small distortions the system is metallic, with a ground state of predominantly d8L character, where L_ denotes a ligand hole. For sufficiently large distortions (δdNi-O∼0.05-0.10  Å), however, a gap opens at the Fermi energy as the system enters a periodically distorted state alternating along the three crystallographic axes, with (d8L_2)S=0(d8)S=1 character, where S is the total spin. Thus the M-I transition may be viewed as being driven by an internal volume "collapse" where the NiO6 octahedra with two ligand holes shrink around their central Ni, while the remaining octahedra expand accordingly, resulting in the (1/2, 1/2, 1/2) superstructure observed in x-ray diffraction in the insulating phase. This insulating state is an example of charge ordering achieved without any actual movement of the charge. PMID:24679313

  11. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br

    NASA Astrophysics Data System (ADS)

    Brandenburg, Jens; Müller, Jens; Schlueter, John A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  12. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in kappa-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br.

    SciTech Connect

    Brandenburg, J.; Muller, J.; Schlueter, J. A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt {kappa}-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  13. Massive Temperature-Induced Metal—Insulator Transition in Individual Nanowires of a Non-Stoichiometric Vanadium Oxide Bronze

    SciTech Connect

    Patridge, C.; Wu, T; Jaye, C; Ravel, B; Takeuchi, E; Fischer, D; Sambandamurthy, G; Banerjee, S

    2010-01-01

    Metal-insulator transitions in strongly correlated materials, induced by varying either temperature or dopant concentration, remain a topic of enduring interest in solid-state chemistry and physics owing to their fundamental importance in answering longstanding questions regarding correlation effects. We note here the unprecedented observation of a four-orders-of-magnitude metal-insulator transition in single nanowires of {delta}-K{sub x}V{sub 2}O{sub 5}, when temperature is varied, which thus represents a rare new addition to the pantheon of materials exhibiting pronounced metal-insulator transitions in proximity to room temperature.

  14. NMR studies of metal-insulator transition in the spinel-type Cu(Ir1-xVx)2S4

    NASA Astrophysics Data System (ADS)

    Niki, H.; Okuda, H.; Okada, Y.; Higa, K.; Oshiro, M.; Fukuyoshi, N.; Mahoe, R.; Yogi, M.; Nakama, T.; Yagasaki, K.; Ebisu, S.; Nagata, S.

    2011-01-01

    In order to investigate the physical properties of a metal-insulator transition (MIT) on Ir rich side in Cu(Ir1-xVx)2S4 from a microscopic point of view, 63Cu NMR measurements for Cu(Ir1-xVx)2S4 (x = 0.00, 0.03 and 0.05) have been carried out from 4.2 to 300 K. The temperature dependences of the line width, Knight shift and spin-lattice relaxation time (T1) have been measured for these samples. A sudden decreases of the 1/T1T and the negative contribution to the Knight shift from the core polarization of Cu conduction electrons for x = 0.00 and 0.03 samples show clearly the existence of the MIT at TMI = 226 and 175 K, respectively, being attributed to the opening of a band gap below TMI. However, the temperature dependences of the 1/T1T and the Knight shift for x = 0.05 sample change continuously as the band gap is remarkably suppressed below TMI. The density of states at Fermi level in the insulating phase is reduced to about 20 % of that in the metallic phase.

  15. Chromium-niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kenichi; Shibuya, Keisuke; Suzuki, Megumi; Sakai, Kenichi; Fujita, Jun-ichi; Sawa, Akihito

    2016-05-01

    We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal-insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1-x-yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  16. Epitaxial growth of in-plane-dimerized, single phase NbO2 thin films for metal-insulator transition applications

    NASA Astrophysics Data System (ADS)

    Posadas, Agham; Hadamek, Tobias; O'Hara, Andy; Demkov, Alexander

    2015-03-01

    NbO2 is a exhibits a metal-insulator transition that may have potential applications in electronic devices. The strong conductivity change in NbO2 occurs along the dimerization direction and for devices utilizing NbO2 as a channel material (in-plane transport) such as transistors, one would like the dimerization direction to be in the plane of the film. The electrical properties of Nb oxides are strongly dependent on the oxidation state of Nb. It is therefore critical to be able to control the oxidation state of Nb during growth. Here, we describe the epitaxial growth of in-plane-dimerized NbO2 using molecular beam epitaxy on a variety of substrates (STO, LSAT, MgO, BTO and GaN), growth temperatures, and oxygen-to-niobium flux ratios. We show that the particular substrate used significantly affects the bulk and surface crystallinity, as well as the degree of oxidation. We also show the evolution of the valence and core level photoemission spectra of Nb oxides as a function of oxygen-to-niobium flux ratio and point out the optimum growth conditions to achieve phase-pure, epitaxial NbO2 films.

  17. Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

    2016-06-01

    The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

  18. Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2015-07-01

    Insulator-to-metal (MI) phase transition in vanadium dioxide (V O2) thin films with controlled lattice distortion was investigated by thermopower measurements. V O2 epitaxial films with different crystallographic orientations, grown on (0001 ) α -A l2O3 , (11 2 ¯0 ) α -A l2O3 , and (001 ) Ti O2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S ) from ˜200 to 23 μ V K-1 , along with a sharp drop in electrical resistivity (ρ ) , due to the transition from an insulator to a metal. The MI transition temperatures observed both in ρ (Tρ) and S (TS) for the V O2 films systematically decrease with lattice shrinkage in the pseudorutile structure along the c axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset TS, where the insulating phase starts to become metallic, is much lower than the onset Tρ. This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in ρ measurements. Consequently, S measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in V O2 .

  19. Metal-insulator transition in AC{sub 60}:RbC{sub 60} and KC{sub 60}

    SciTech Connect

    Khazeni, K.; Crespi, V.H.; Hone, J.; Zettl, A.; Cohen, M.L. |

    1997-09-01

    At zero pressure polymerized RbC{sub 60} is an insulator, whereas polymerized KC{sub 60} is a metal with a slight low-temperature resistive upturn. We report measurements of the resistivity of RbC{sub 60} under pressure, finding a hysteretic resistive transition in RbC{sub 60} near 200 K at 5 kbar, at which point the material transforms from insulator to metal. Correcting the resistivity to constant volume, both materials are metallic below the transition with a common low-temperature resistive upturn which is suppressed under compression. {copyright} {ital 1997} {ital The American Physical Society}

  20. Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

    SciTech Connect

    Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

    2003-01-24

    Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase.

  1. Size-dependent metal-insulator transition in platinum-dispersed silicon dioxide thin film: A candidate for future non-volatile memory

    NASA Astrophysics Data System (ADS)

    Chen, Albert B. K.

    Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, the goal of this study is to use a model material to delineate the intrinsic features of the electronic metal/insulator transition in random systems and to demonstrate their relevance to reliable memory storage and retrieval. We fabricated amorphous SiO2 thin films embedded with randomly dispersed Pt atoms. Macroscopically, this random material exhibits a percolation transition in electric conductivity similar to the one found in various insulator/metal granular materials. However, at Pt concentrations well below the bulk percolation limit, a distinct insulator to metal transition occurs in the thickness direction as the film thickness falls below electron's "diffusion" distance, which is the tunneling distance at 0K. The thickness-triggered metal- to-insulator transition (MIT) can be similarly triggered by other conditions: (a) a changing Pt concentration (a concentration-triggered MIT), (b) a changing voltage/polarity (voltage-triggered MIT), and (c) an UV irradiation (photon-triggered MIT). The resistance switching characteristics of this random material were further investigated in several device configurations under various test conditions. These include: materials for the top and bottom electrodes, fast pulsing, impedance spectroscopy, static stressing, retention, fatigue and temperature from 10K to 448K. The SiO2-Pt

  2. Metal-insulator transition in Nd{sub 1−x}Eu{sub x}NiO{sub 3}: Entropy change and electronic delocalization

    SciTech Connect

    Jardim, R. F. Andrade, S.; Barbeta, V. B.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-07

    The metal-insulator (MI) phase transition in Nd{sub 1–x}Eu{sub x}NiO{sub 3}, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat C{sub P}(T). The MI transition temperature (T{sub MI}) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dT{sub MI}/dP were found: (i) for x ≤ 0.15, dT{sub MI}/dP is nearly constant and ∼−4.3 K/kbar; (ii) for x ≥ 0.15, dT{sub MI}/dP increases with x and it seems to reach a saturation value ∼−6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of T{sub MI}. The entropy change (ΔS) at T{sub MI} for the sample x = 0, estimated by using the dT{sub MI}/dP data and the Clausius-Clapeyron equation, resulted in ΔS ∼ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔS{sub M} ∼ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and C{sub P}(T) data indicates that the entropy change at T{sub MI} is mainly due to the electronic delocalization and not related to the AF transition.

  3. Directing Colloidal Assembly and a Metal-Insulator Transition Using a Quench-Disordered Porous Rod Template

    NASA Astrophysics Data System (ADS)

    Jadrich, Ryan B.; Schweizer, Kenneth S.

    2014-11-01

    Replica and effective-medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly to achieve globally homogeneous, strongly clustered, and percolated equilibrium states of high electrical conductivity at low physical volume fractions. A key idea is to employ a quench-disordered, large-mesh rigid-rod network as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low-dimensional network and fluctuation-driven colloid clustering in the pore spaces, two distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. The approach is generalizable to more complicated template or colloidal architectures.

  4. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    NASA Astrophysics Data System (ADS)

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.

  5. Continuous metal-insulator transition at 410 K of the antiferromagnetic perovskite NaOsO3

    NASA Astrophysics Data System (ADS)

    Yamaura, K.; Shi, Y. G.; Guo, Y. F.; Yu, S.; Arai, M.; Belik, A. A.; Sato, A.; Takayama-Muromachi, E.; Tian, H. F.; Yang, H. X.; Li, J. Q.; Varga, T.; Mitchell, J. F.; Okamoto, S.

    2010-03-01

    Newly synthesized perovskite NaOsO3 shows a Curie-Weiss metallic nature at high temperature and suddenly goes into an antiferromagnetically insulating state at 410 K on cooling. Electronic specific heat at the low temperature limit is absent, indicating that the band gap fully opens. In situ observation in electron microscopy undetected any lattice anomalies in the vicinity of the transition temperature. It is most likely that the antiferromagnetic correlation plays an essential role in the gap opening. Use of the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. This research was supported in part by the WPI Initiative on Materials Nanoarchitectonics from MEXT, Japan, and the Grants-in-Aid for Scientific Research (20360012) from JSPS.

  6. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    PubMed Central

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-01-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent. PMID:27033955

  7. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  8. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    DOE PAGESBeta

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Here, bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Usingmore » space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.« less

  9. Polarity and the Metal-Insulator Transition in ultrathin LaNiO3 on SrTiO3

    NASA Astrophysics Data System (ADS)

    Freeland, J. W.; Tung, I. C.; Luo, G.; Zhou, H.; Lee, J. H.; Chang, S. H.; Morgan, D.; Bedzyk, M. J.; Fong, D. D.

    Dimensionality and strain control of nickelates has been shown as a route for control of interesting electronic and magnetic phases. However, little is know about the evolution of atomic structure in these layered architectures and the interplay with these states. Here we present, a detailed study of lattice structures measured real time during the layer-by-layer growth of LaNiO3 on SrTiO3. Using hard X-rays coupled with oxide MBE, we have tracked the lattice structure evolution as a function of depth across the regime where transport shows a clear metal to insulator transition. At the same time X-ray absorption shows the films are closer to LaNiO2.5 when thin and evolve to LaNiO3 by 10 unit cells thickness. Analysis of the structure during growth displays a very complex evolution throughout the film of the lattice parameter and displacement of the B-site from the unit cell center, which theory connects with pathways of compensating the polar mismatch at the surface and interface. Work at the APS, Argonne is supported by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  10. The metal-insulator transition in vanadium dioxide: A view at bulk and surface contributions for thin films and the effect of annealing

    SciTech Connect

    Yin, W.; West, K. G.; Lu, J. W.; Pei, Y.; Wolf, S. A.; Reinke, P.; Sun, Y.

    2009-06-01

    Vanadium dioxide is investigated as potential oxide barrier in spin switches, and in order to incorporate VO{sub 2} layers in complex multilayer devices, it is necessary to understand the relation between bulk and surface/interface properties. Highly oriented VO{sub 2} thin films were grown on (0001) sapphire single crystal substrates with reactive bias target ion beam deposition. In the analysis of the VO{sub 2} films, bulk-sensitive methods [x-ray diffraction (XRD) and transport measurements] and surface sensitive techniques [photoelectron spectroscopy (PES) and scanning tunneling microscopy and spectroscopy] were employed. The samples were subjected to heating cycles with annealing temperatures of up to 425 and 525 K. Prior to annealing the VO{sub 2} films exhibit the transition from the monoclinic to the tetragonal phase with the concurrent change in conductivity by more than a factor of 10{sup 3} and their phase purity is confirmed by XRD. Annealing to 425 K and thus cycling across the metal-insulator transition (MIT) temperature has no impact on the bulk properties of the VO{sub 2} film but the surface undergoes irreversible electronic changes. The observation of the valence band with PES during the annealing illustrates that the surface adopts a partially metallic character, which is retained after cooling. Annealing to a higher temperature (525 K) triggers a modification of the bulk, which is evidenced by a considerable reduction in the MIT characteristics, and a degradation in crystallite morphology. The local measurement of the conductivity with scanning tunneling spectroscopy shows the transition of the surface from predominantly semiconducting surface prior to annealing to a surface with an overwhelming contribution from metallic sections afterward. The spatial distribution of metallic regions cannot be linked in a unique manner to the crystallite size or location within the crystallites. The onset of oxygen depletion at the surface is held responsible

  11. Localization of Metal-Induced Gap States at the Metal-Insulator Interface: Origin of Flux Noise in SQUIDs and Superconducting Qubits

    NASA Astrophysics Data System (ADS)

    Choi, Sangkook; Lee, Dung-Hai; Louie, Steven G.; Clarke, John

    2010-03-01

    The origin of magnetic flux noise in dc Superconducting Quantum Interference Devices (SQUIDs) with a power spectrum scaling as 1/f (f is frequency) has been a puzzle for over 25 years. This noise limits both the low frequency performance of SQUIDs and the decoherence time of flux-sensitive superconducting qubits, making scaling-up for quantum computing problematic. Recent calculations and experiments indicate that the noise is generated by electrons that randomly reverse their spin directions. Their areal density of ˜ 5 x 10^17 m-2 is relatively insensitive to the nature of the superconductor and substrate. Here, we propose that the local magnetic moments originate in metal-induced gap states (MIGSs) localized by potential disorder at the metal-insulator interface. MIGSs are particularly sensitive to such disorder, so that the localized states have a Coulomb repulsion sufficiently large to make them singly occupied. Our calculations demonstrate that a modest level of disorder generates the required areal density of localized moments. This result suggests that magnetic flux noise could be reduced by fabricating superconductor-insulator interfaces with less disorder. Support: NSF DMR07-05941, US DOE De-AC02-05CH11231, Samsung Foundation, Teragrid, NERSC.

  12. Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1 -xSbxTe2 studied by angle-resolved photoemission

    NASA Astrophysics Data System (ADS)

    Trang, Chi Xuan; Wang, Zhiwei; Yamada, Keiko; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Segawa, Kouji; Ando, Yoichi

    2016-04-01

    We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1 -xSbxTe2 which is bulk insulating at 0.5 ≲x ≲0.9 and undergoes a metal-insulator-metal transition with the Sb content x . We found that this transition is characterized by a systematic hole doping with increasing x , which results in the Fermi-level crossings of the bulk conduction and valence bands at x ˜0 and x ˜1 , respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1 -xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.

  13. Valence and origin of metal-insulator transition in Mn doped SrRuO 3 studied by electrical transport, X-ray photoelectron spectroscopy and LSDA+ U calculation

    NASA Astrophysics Data System (ADS)

    Sahu, Ranjan K.; Pandey, Sudhir K.; Pathak, L. C.

    2011-03-01

    We have studied the valence and electronic properties of Mn doped SrRuO 3 using electrical transport measurement, X-ray photoelectron spectroscopy (XPS) and local (spin) density approximation plus Coulomb interaction strength calculation (LSDA+ U). The resistivity data revealed that the system undergoes transition from metal to insulator at the critical Mn doping level, x˜0.2, which is accompanied by the structural transition from orthorhombic to tetragonal crystal symmetry. Besides, the significant reduction of the spectral weight at the coherent zone (0.8 eV) of the valence band is observed for x>0.2. The core XPS spectra suggest that both the transition elements exist in the mixed ionic pair, Ru +4/Ru +5↔Mn +3/Mn +4. The detail analysis of the results suggests that the Coulomb correlation effect in conjugation with localization of the charge carriers predominate over the mixed ionic pair effect and responsible for the metal-insulator transition in the series.

  14. Finite-size driven topological and metal-insulator transition in (Bi1-xInx)2 Se3thin films

    NASA Astrophysics Data System (ADS)

    Salehi, Maryam; Shapourian, Hassan; Koirala, Nikesh; Brahlek, Matthew; Moon, Jisoo; Oh, Seongshik

    In a topological insulator (TI), if one of its heavy elements is replaced by a light one, the spin-orbit coupling (SOC) strength decreases and eventually the TI transforms into a normal insulator beyond a critical level of substitution.This is the standard description of the topological phase transition (TPT). However, this notion of TPT, driven solely by the SOC (or something equivalent), is not complete for finite size samples considering that the thickness of the topological surface states diverges at the critical point. Here, on specially-engineered (BixIn1-x)2 Se3 thin films, using systematic transport measurments we show that not only the SOC but also the finite sample size can induce TPT. This study sheds light on the role of spatial confinement as an extra tuning parameter controlling the topological critical point.

  15. Anomalous behavior of the surface tension at the interface of the metallic and insulating phases in the vicinity of the metal-insulator phase transition in a magnetic field

    NASA Astrophysics Data System (ADS)

    Dubovskii, L. B.

    2014-03-01

    Mean-field equations describing the metal-insulator (MI) transition are formulated. They involve two coupled order parameters characterizing this transition: (i) a scalar order parameter describing the density change accompanying the transition from the insulating state to the metallic one and (ii) an order parameter (a two-component vector) describing the electron density in the metallic or semimetallic phase affected by the applied magnetic field. Two components of this vector correspond to different possible spin states of electrons in the applied magnetic field. The transition in the density of metallic and insulating phases being a first order phase transition is treated in terms of the Cahn-Hilliard-type gradient expansion. The transition in the electron density is a second order phase described by the Ginzburg-Landau-type functional. The coupling of these two parameters is described by the term linearly dependent on the electron density n in the metal with the proportionality factor being a function of the density of the metallic phase. The derived equations are solved in the case of the MI interface in the presence of both parallel and perpendicular uniform magnetic fields. The calculated surface tension Σmi between the metallic and insulating phases has a singular behavior. In the limit of zero electron density n ⟹ 0, Σmi ˜ n 3/2. Near the MI transition point T c( h) in the applied magnetic field, Σmi ˜ [ T - T c( h)]3/2. The singular behavior of the surface tension at the MI interface results in the clearly pronounced hysteresis accompanying the transition from the insulating to metallic state and vice versa.

  16. Metal-insulator transition in antiferromagnetic Ba1−xKxMn2As2 (0≤x≤0.4) single crystals studied by 55Mn and 75As NMR

    SciTech Connect

    Yeninas, Steven; Pandey, Abhishek; Ogloblichev, V.; Mikhalev, K.; Johnston, David C.; Furukawa, Yuji

    2013-12-23

    The magnetic structure and metal-insulator transition in antiferromagnetic (AFM) BaMn2As2 and Ba1−xKxMn2As2 single crystals have been investigated by 55Mn and 75As nuclear magnetic resonance (NMR) measurements. In the parent AFM insulator BaMn2As2 with a Néel temperature TN=625 K, we observed a 55Mn zero-field NMR (ZFNMR) spectrum and confirmed the G-type AFM structure from the field dependence of the 55Mn spectra and 75As NMR spectra below TN. In hole-doped crystals with x>0.01, similar 55Mn ZFNMR spectra were observed and the AFM state was revealed to be robust up to x=0.4 with the ordered moment nearly independent of x. The nuclear spin-lattice relaxation rates (1/T1) for both nuclei in the doped samples follow the Korringa relation T1T=const, indicating a metallic state. This confirms the coexistence of AFM ordered localized Mn spins and conduction carriers from a microscopic point of view. From the x dependence of (T1T)−1/2 for both nuclei, we conclude that this transition is caused by vanishing of the hole concentration as the transition is approached from the metallic side.

  17. Metal-Insulator Transition of the New One-Dimensional Organic Conductors with Complete Uniform Stacks: (DMEDO-TTF)2X (X = ClO4 and BF4)

    NASA Astrophysics Data System (ADS)

    Kumeta, Shohei; Kawamoto, Tadashi; Shirahata, Takashi; Misaki, Yohji; Mori, Takehiko

    2016-09-01

    The structural, transport, and magnetic properties of the new organic conductors (DMEDO-TTF)2X (X = ClO4 and BF4), where DMEDO-TTF is dimethyl(ethylenedioxy)tetrathiafulvalene, have been investigated. These compounds have a complete uniform stack structure, indicating that a quasi-one-dimensional 3/4-filled band without a dimerization gap is realized. The ClO4 and BF4 salts show a first-order metal-insulator (MI) transition at approximately 190 and 210 K, respectively, in the cooling process. The ground state is a nonmagnetic insulator on the basis of magnetic susceptibility measurements. Low-temperature X-ray diffraction measurements show that the MI transition originates in the anion ordering transition with a superstructure wave vector of q = (0,1/2,0) corresponding to the stacking direction; the uniform donor stacking structure changes to the tetramerized structure with a large shift of the donors. The shift of the anion toward the central two donors in a tetramer indicates that the insulating phase is a charge-density-wave state.

  18. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    SciTech Connect

    Shao, Tao; Qi, Zeming Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin; Wang, Yu; Liu, Miao

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  19. Magnetism variations and susceptibility hysteresis at the metal-insulator phase transition temperature of VO2 in a composite film containing vanadium and tungsten oxides

    NASA Astrophysics Data System (ADS)

    Akande, Amos A.; Rammutla, Koena E.; Moyo, Thomas; Osman, Nadir S. E.; Nkosi, Steven S.; Jafta, Charl J.; Mwakikunga, Bonex W.

    2015-02-01

    We report on the magnetic property of 0.67-WO3+0.33-VOx mixture film deposit on the corning glass substrate using the chemical sol-gel and atmospheric pressure chemical vapor deposition (APCVD) methods. The XRD and Raman spectroscopy confirm species of both materials, and the morphological studies with FIB-SEM and TEM reveal segregation of W and V atoms. XPS reveals that V4+ from VO2 forms only 11% of the film; V3+ in the form of V2O3 form 1% of the film, 21% is V5+ from V2O5 and 67% is given to W6+ from WO3. The analysis of the ESR data shows some sharp changes in the magnetism near the metal-to-insulator (MIT), which could be theoretically interpreted as the ordering or alignment of electron spins from net moment nature to parallel alignment of magnetic moment. The derivatives of magnetic susceptibility established the thermally induced magnetic property: two distinct transitions of 339 K for heating data and 338 K for cooling data for 151.2 mT field were obtained. Similar results were also obtained for 308.7 mT field, 336 K for heating data and 335 K for cooling data. VSM results confirm a paramagnetic phase with a small amount of magnetically ordered phase.

  20. Metal-insulator transition and emergence of spontaneous polarization in (La1-xSrxMnO3)m /(LaNiO3)n superlattices constructed from metallic building blocks

    NASA Astrophysics Data System (ADS)

    Ghosh, Saurabh; Mishra, Rohan; Hoffman, Jason; Bhattacharya, Anand; Borisevich, Albina Y.; Pantelides, Sokrates T.

    La0.7Sr0.3MnO3 and LaNiO3 are metallic oxides. However, short-period superlattices of the form (La0.7Sr0.3MnO3)m /(LaNiO3)n show insulating behavior depending on m and n. In particular, the insulating property is robust when m = n = 2 (SL 2/2). Here, using first-principles density functional theory (DFT) and DFT+U (static d - d Coulomb interaction), we explain the experimental observation and discuss a general mechanism that underlies such metal-insulator transition for different m and n. The general mechanism is based on the finding that disproportionation on Ni sites is the key. Further, we predict that insulating SL 2/2 is ferroelectric with large spontaneous polarization. The ferroelectric distortion persists in the cases where the superlattices are metallic, which leads to the possibility of designing a new family of 'polar metals'. Finally, we discuss the origin of such polar distortion and its coupling with the magnetic properties (by considering spin-phonon coupling) of the material. This work is supported by DOE Grant Number DE-FG02-09ER46554 and DOE BES DMSE.

  1. Controlling the sharpness of metal-insulator transition in epitaxial (La1-xPrx)0.67Ca0.33MnO3 (0 ≤ x ≤ 0.35) films

    NASA Astrophysics Data System (ADS)

    Chen, Pingfan; Huang, Zhen; Tan, Xuelian; Chen, Binbin; Zhi, Bowen; Gao, Guanyin; Chen, Feng; Wu, Wenbin

    2014-10-01

    We report that epitaxial strain and chemical doping can be used cooperatively to tune the sharpness of metal-insulator transition (MIT) in epitaxial (La1-xPrx)0.67Ca0.33MnO3 (LPCMO) films. Compared to multiple MITs in anisotropically strained LPCMO/(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(001)C (LSAT) films with a phase-separated ground state, the lattice-matched LPCMO/NdGaO3(110)Or (NGO) films show a sharp MIT near the Curie temperature (TC), with a ferromagnetic-metallic ground state. The sharpness of MIT, as evaluated by the temperature coefficient of resistance (TCR), can be two times larger in LPCMO/NGO films than in LPCMO/LSAT films. Moreover, for LPCMO/NGO films, TCR greatly relies on the Pr doping level x, where a maximum TCR value of 88.17% K-1 can be obtained at x = 0.25, but shows less dependence on the film thicknesses. These results suggest that the combination of epitaxial strain and chemical doping could be employed to control not only the ground state of the manganite films, but the sharpness of MIT at various TC, providing the feasibility to design manganite-based infrared devices in a broad temperature range.

  2. Active Metal-Insulator-Metal Plasmonic Devices

    NASA Astrophysics Data System (ADS)

    Diest, Kenneth Alexander

    As the field of photonics constantly strives for ever smaller devices, the diffraction limit of light emerges as a fundamental limitation in this pursuit. A growing number of applications for optical "systems on a chip" have inspired new ways of circumventing this issue. One such solution to this problem is active plasmonics. Active plasmonics is an emerging field that enables light compression into nano-structures based on plasmon resonances at a metal-dielectric interface and active modulation of these plasmons with an applied external field. One area of active plasmonics has focused on replacing the dielectric layer in these waveguides with an electro-optic material and designing the resulting structures in such a way that the transmitted light can be modulated. These structures can be utilized to design a wide range of devices including optical logic gates, modulators, and filters. This thesis focuses on replacing the dielectric layer within a metal-insulator-metal plasmonic waveguide with a range of electrically active materials. By applying an electric field between the metal layers, we take advantage of the electro-optic effect in lithium niobate, and modulating the carrier density distribution across the structure in n-type silicon and indium tin oxide. The first part of this thesis looks at fabricating metal-insulator-metal waveguides with ion-implantation induced layer transferred lithium niobate. The process is analyzed from a thermodynamic standpoint and the ion-implantation conditions required for layer transfer are determined. The possible failure mechanisms that can occur during this process are analyzed from a thin-film mechanics standpoint, and a metal-bonding method to improve successful layer transfer is proposed and analyzed. Finally, these devices are shown to naturally filter white light into individual colors based on the interference of the different optical modes within the dielectric layer. Full-field electromagnetic simulations show that

  3. Electric-field-driven Mott metal-insulator transition in correlated thin films: An inhomogeneous dynamical mean-field theory approach

    NASA Astrophysics Data System (ADS)

    Bakalov, P.; Nasr Esfahani, D.; Covaci, L.; Peeters, F. M.; Tempere, J.; Locquet, J.-P.

    2016-04-01

    Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied transverse electric field. Application of a sufficiently strong field to a thin film at half filling leads to the appearance of conducting regions near the surfaces of the film, whereas in doped slabs the application of a field leads to a conductivity enhancement on one side of the film and a gradual transition to the insulating state on the opposite side. In addition to the inhomogeneous DMFT, a local density approximation (LDA) is considered in which the particle density n , quasiparticle residue Z , and spectral weight at the Fermi level A (ω =0 ) of each layer are approximated by a homogeneous bulk environment. A systematic comparison between the two approaches reveals that the less expensive LDA results are in good agreement with the DMFT approach, except close to the metal-to-insulator transition points and in the layers immediately at the film surfaces. LDA values for n are overall more reliable than those for Z and A (ω =0 ) . The hysteretic behavior (memory effect) characteristic of the bulk doping driven Mott transition persists in the slab.

  4. Metal-insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films

    NASA Astrophysics Data System (ADS)

    Capon, F.; Laffez, P.; Bardeau, J.-F.; Simon, P.; Lacorre, P.; Zaghrioui, M.

    2002-07-01

    Nd0.7Eu0.3NiO3 thin films are deposited by rf sputtering and subsequent oxygen pressure annealing on (100) oriented silicon substrate. We characterize the thermochromic properties of films by measuring electrical transition, infrared transmittance, and reflectance. The thermochromic effect at room temperature is observed. Resistivity measurements exhibit a sharper hysteresis loop than is usually observed in NdNiO3 thin films. Infrared properties in the 8-14 mum wavelength range spectra reveal a contrast of 30% in reflectance and 55% in transmittance.

  5. Metal insulator transition and magnetotransport anomalies in perovskite SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Lee, Yong Woo; Kim, Sang Woo; Jeong, Yoon Hee

    2015-03-21

    We investigated the nature of transport and magnetic properties in SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} (SIRO), which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (e.g., SrTiO{sub 3} (001), (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7} (001), and LaAlO{sub 3} (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures (T{sub MIT} ∼ 80 K on SrTiO{sub 3}, ∼90 K on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7}, and ∼100 K on LaAlO{sub 3}) in resistivity. At temperature 300 K ≥ T ≥ T{sub MIT}, SIRO is metallic and its resistivity follows a T{sup 3/2} power law, whereas insulating nature at T < T{sub MIT} is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO{sub 3} (001) shows negative MR at T < 25 K and positive MR at T > 25 K, with negative MR ∝ B{sup 1/2} and positive MR ∝ B{sup 2}; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO{sub 3} (001) at T < 25 K in the localized regime validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.

  6. Effect of Screening on electronic properties of Boron Nitride Nanotube under an electric field in the proximity of a possible metal insulator transition

    NASA Astrophysics Data System (ADS)

    Sau, Jay

    2005-03-01

    Previous theoretical calculations have shown that the band gap of boron nitride nanotubes can change significantly in a transverse electric field. For large nanotubes it is possible to close the LDA gap with moderately high field strengths. The conduction and valence states in this system are spatially separated creating the possibilty of long-lived excitons. LDA calculations indicate a metallic screening of the field after gap closure. However due to the innately weak screening in Boron Nitride and 1D geometry one can also expect excitonic and other correlation effects to be strong in this system. The screening properties are critical to understanding whether metallic ground state can be reached and whether the possibly long-lived excitons have large binding energies. We estimate the field induced modification of the screening using a tight-binding approach similar to the tight-binding GW/Bethe-Salpeter approach that has previously been used for nanocrystals. The implications of the screening on the possible electronic structures are also examined. This research is supported by National Science Foundation Grant No. DMR-39768, Office of Energy Research, the Office of Basic Energy Sciences and Materials Sciences Division of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098. Computational Resources were provided by NPACI and by NERSC.

  7. Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure

    NASA Astrophysics Data System (ADS)

    Hao, Rulong; Li, Yi; Liu, Fei; Sun, Yao; Tang, Jiayin; Chen, Peizu; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

    2016-03-01

    A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I-V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.

  8. Thin Nanoporous Metal-Insulator-Metal Membranes.

    PubMed

    Aramesh, Morteza; Djalalian-Assl, Amir; Yajadda, Mir Massoud Aghili; Prawer, Steven; Ostrikov, Kostya Ken

    2016-02-01

    Insulating nanoporous materials are promising platforms for soft-ionizing membranes; however, improvement in fabrication processes and the quality and high breakdown resistance of the thin insulator layers are needed for high integration and performance. Here, scalable fabrication of highly porous, thin, silicon dioxide membranes with controlled thickness is demonstrated using plasma-enhanced chemical-vapor-deposition. The fabricated membranes exhibit good insulating properties with a breakdown voltage of 1 × 10(7) V/cm. Our calculations suggest that the average electric field inside a nanopore of the membranes can be as high as 1 × 10(6) V/cm; sufficient for ionization of wide range of molecules. These metal-insulator-metal nanoporous arrays are promising for applications such soft ionizing membranes for mass spectroscopy. PMID:26846250

  9. Gravitationally induced quantum transitions

    NASA Astrophysics Data System (ADS)

    Landry, A.; Paranjape, M. B.

    2016-06-01

    In this paper, we calculate the probability for resonantly inducing transitions in quantum states due to time-dependent gravitational perturbations. Contrary to common wisdom, the probability of inducing transitions is not infinitesimally small. We consider a system of ultracold neutrons, which are organized according to the energy levels of the Schrödinger equation in the presence of the Earth's gravitational field. Transitions between energy levels are induced by an oscillating driving force of frequency ω . The driving force is created by oscillating a macroscopic mass in the neighborhood of the system of neutrons. The neutron lifetime is approximately 880 sec while the probability of transitions increases as t2. Hence, the optimal strategy is to drive the system for two lifetimes. The transition amplitude then is of the order of 1.06 ×10-5, and hence with a million ultracold neutrons, one should be able to observe transitions.

  10. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values. PMID:27172429

  11. metal-insulator-metal (MIM) devices

    NASA Astrophysics Data System (ADS)

    Khaldi, O.; Jomni, F.; Gonon, P.; Mannequin, C.; Yangui, B.

    2014-09-01

    This paper is devoted to the study of the electrical properties of Au/HfO2/TiN metal-insulator-metal (MIM) capacitors in three distinctive modes: (1) alternative mode ( C- f), (2) dynamic regime [thermally stimulated currents, TSCs I( T)] and (3) static mode [ I( V)]. The electrical parameters are investigated for different temperatures. It is found that capacitance frequency C- f characteristic possesses a low-frequency dispersion that arises for high temperature ( T > 300 °C). Accordingly, the loss factor exhibits a dielectric relaxation (with an activation energy E a ~ 1.13 eV) which is intrinsically related to the diffusion of oxygen vacancies. The relaxation mechanisms of electrical defects in a dynamic regime (TSCs) analysis show that defect related to the TSC peak observed at 148.5 °C ( E a ~ 1 eV) is in agreement with impedance spectroscopy ( C- f). On the other hand, when the MIM structures are analyzed in static mode, the I- V plots are governed by Schottky emission. The extrapolation of the curve at zero field gives a barrier height of 1.7 eV.

  12. Transient slip behaviour of metal/insulator pairs at 4.2 K

    NASA Astrophysics Data System (ADS)

    Kensley, R. S.; Maeda, H.; Iwasa, Y.

    Experiments have been conducted to observe the sliding behaviour, at 4.2 K, of freshly prepared metal/insulator combinations during a set of sequential slip tests. Measurements of the tangential force versus displacement, as well as displacement and acoustic emission rate versus time, were recorded. A triboelectric effect was also monitored. Depending on the particular metal/insulator pair tested, completely stable (slow velocity), completely unstable (rapid velocity), or a transition from unstable to stable sliting behaviour was observed. This transition behaviour was noticed for several metal/insulator combinations commonly used in superconducting magnet windings. An asperity plowing model is proposed to account for this behaviour, and is based upon the abrasive action of rubbing materials poorly matched in hardness against each other. The training phenomenon in unimpregnated superconducting magnet windings may be attributable to this wearing-in of frictional surfaces. A simple epoxy coating technique was successful in eliminating initial rapid slip events, thereby completely stabilizing the sliding behaviour of a conductor/insulator combination.

  13. Suppression of the metal-insulator transition by magnetic field in (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} (y = 0.0625)

    SciTech Connect

    Naito, Tomoyuki Fujishiro, Hiroyuki; Nishizaki, Terukazu; Kobayashi, Norio; Hejtmánek, Jiří; Knížek, Karel; Jirák, Zdeněk

    2014-06-21

    The (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} compound (y = 0.0625, T{sub MI-SS}=40 K), at the lower limit for occurrence of the first-order metal-insulator (MI) and simultaneous spin-state (SS) transitions, has been studied using electrical resistivity and magnetization measurements in magnetic fields up to 17 T. The isothermal experiments demonstrate that the low-temperature insulating phase can be destabilized by an applied field and the metallic phase returns well below the transition temperature T{sub MI-SS}. The reverse process with decreasing field occurs with a significant hysteresis. The temperature scans taken at fixed magnetic fields reveal a parabolic-like decrease in T{sub MI-SS} with increasing field strength and a complete suppression of the MI-SS transition in fields above 9 T.

  14. Ultrafast compact silicon-based ring resonator modulators using metal-insulator switching of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Nag, Joyeeta; Ryckman, Judson D.; Hertkorn, Michael T.; Choi, Bo K.; Haglund, Richard F., Jr.; Weiss, Sharon M.

    2010-02-01

    We present an optical modulator based on a silicon ring resonator coated with vanadium-dioxide (VO2) motivated by the need for compact silicon-compatible optical switches operating at THz speeds. VO2 is a functional oxide undergoing metal-insulator transition (MIT) near 67°C, with huge changes in electrical resistivity and near-infrared transmission. The MIT can be induced thermally, optically (by ultra-fast laser excitation in less than 100 fs), and possibly with electric field. VO2 is easily deposited on silicon and its ultrafast switching properties in the near-infrared can be used to tune the effective index of ring resonators in the telecommunication frequencies instead of depending on the weak electro-optic properties of silicon. The VO2-silicon hybrid ring resonator is expected to operate at speeds up to 10 THz at low Q-factor and with shorter cavity lifetimes, thus enabling compact, faster, more robust devices. We have made ring resonator structures on SOI substrates with rings varying in diameter from 3-10 μm coupled to 5 mm-long nanotapered waveguides at separations of 200 nm. Rings were coated with 80 nm of VO2 by pulsed laser deposition. As proof-of-concept, by switching the VO2 top layer thermally, we were able to modulate the resonance frequency of the ring to match with the predictions from our FDTD simulations.

  15. Ground-state tuning of metal-insulator transition by compositional variations in BaI r1 -xR uxO3(0 ≤x ≤1 )

    NASA Astrophysics Data System (ADS)

    Yuan, S. J.; Butrouna, K.; Terzic, J.; Zheng, H.; Aswartham, S.; DeLong, L. E.; Ye, Feng; Schlottmann, P.; Cao, G.

    2016-04-01

    Hexagonal BaIr O3 is a magnetic insulator driven by the spin-orbit interaction (SOI), whereas BaRu O3 is an enhanced paramagnetic metal. Our investigation of structural, magnetic, transport, and thermal properties reveals that substitution of R u4 + (4 d4 ) ions for I r4 + (5 d5 ) ions in BaIr O3 reduces the magnitudes of the SOI and a monoclinic structural distortion and rebalances the competition between the SOI and the lattice degrees of freedom to render an evolution from a magnetic insulting state to a robust metallic state. The central findings of this paper are as follows: (1) light Ru doping (0 induces a robust metallic state without any long-range magnetic order. All results suggest a critical role of the lattice degrees of freedom in determining the ground state in the heavy transition-metal oxides.

  16. Quantum Magnetic Oscillations of the Surface Tension at a Metal-Insulator Interface

    NASA Astrophysics Data System (ADS)

    Dubovskii, L. B.

    2016-03-01

    Any metal-insulator transition (MI transition) in a crystalline material must be a transition from a situation in which electronic bands overlap to a situation when they do not (Mott, Metal-insulator, 2nd edn. Taylor@Francis, London, 1990). For this case the self-consistent equations for the two-band conductor are formulated (cf. Dubovskii, JETP Lett. 99(1):22-26, 2014). The description of the MI phase transition is based on two order parameters. The first one is the material density distribution at the MI boundary ρ ({vec {r}}). The second one is a four-component complex vector in spin space Upsilon ({vec {r}}). The value Upsilon ({vec {r}}) determines the electron density in the metallic or semimetallic phase in the presence of an external magnetic field. Two different components of the vector describe possible spin states of electrons and holes inserted in the external magnetic field. The solution gives a singular behavior of the surface tension at the MI interface in the vicinity of the MI phase transition. At low temperature quantum oscillations of the surface tension in the magnetic field take place.

  17. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  18. Nonpercolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1 -xCaxMnO3

    NASA Astrophysics Data System (ADS)

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-01

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x =0.18 ,0.22 ). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS˜720 K. The study utilized explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1 -xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ˜1 nm with observably smaller distortions. In the x =0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ˜1050 K), where they are crystallographically prohibited. Their magnitude and subnanometer spatial extent remain unchanged.

  19. Non percolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1-xCaxMnO3

    DOE PAGESBeta

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-25

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x = 0.18,0.22). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS~720 K. The study utilizedmore » explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1–xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ~1 nm with observably smaller distortions. In the x = 0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ~1050 K), where they are crystallographically prohibited. As a result, their magnitude and subnanometer spatial extent remain unchanged.« less

  20. Uniaxial pressure effect of Metal-Insulator Transition (TMI) in oriented Sm0.55(Sr0.5Ca0.5)0.45MnO3

    NASA Astrophysics Data System (ADS)

    Arumugam, Sonachalam; Mohan Radheep, D.; Sarkar, P.; Mandal, P.; Arumugam Team; Prabhat Mandal Collaboration

    2013-06-01

    Perovskite type manganites R1 - xAxMnO3 (R: rare earth ions, A: alkaline earth ions) exhibit various fundamental phenomena like colossal magnetoresistance (CMR), phase separation, and first-order ferromagnetic (FM) to paramagnetic (PM) phase transition etc. Similar to CMR, piezoresistance (PR), the change in electrical resistance in response to external pressure, can also be important parameter for various technological applications. Several studies shows that the order of phase transition can be changed either by applying external perturbations like magnetic field, pressure (P) , etc. or internally like doping etc. SSCMO single crystal was grown using floating zone technique and the quality was carefully checked and aligned along the c axis as well as ab-plane. We have investigated the effect of uniaxial pressure (P) on electrical resistivity along the ab-plane and c - axis in a single crystal of SSCMO. A huge PR ~107 % at P = 90 MPa and a remarkable increase (~79 K/GPa) of TMI have been observed with the application of P || c - axis, while TMI decreases at the rate of ~77 K/GPa for P⊥ c axis. These values of PR and dTMI /dP are much larger than those observed in other perovskite and bilayer manganites. Hence, these materials may be used for various technological applications. The authors SA and DMR wishes to thank DST, UGC and CSIR-SRF scheme (India) for the financial support to carry out the research work.

  1. Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Zhan, J. M.; Li, P. G.; Liu, H.; Tao, S. L.; Ma, H.; Shen, J. Q.; Pan, M. J.; Zhang, Z. J.; Wang, S. L.; Yuan, G. L.

    2016-04-01

    La0.67Sr0.33MnO3 (LSMO) thin films were deposited on (001)SrTiO3(STO) and n-type doped Nb:SrTiO3(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(TMI) of LSMO film on NSTO is lower than that on STO, and the TMI of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics.

  2. Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si{sub 0.02}Zn{sub 0.98}O thin films grown by pulsed laser deposition

    SciTech Connect

    Das, Amit K. Ajimsha, R. S.; Kukreja, L. M.

    2014-05-21

    Metal to insulator transition was observed in Si{sub 0.02}Zn{sub 0.98}O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ∼40 to 15 nm. The SZO film with thickness of ∼40 nm showed typical metallic behavior in temperature dependent resistivity measurements. On the contrary, the SZO film with thickness of ∼15 nm was found to exhibit strong localization where the transport at low temperature was dominated by variable range hopping conduction. In the intermediate thickness regime, quantum corrections were important and a dimensional crossover from 3D to 2D weak localization occurred in the SZO film with thickness of 20 nm.

  3. Metal-insulator transitions, structural and microstructural evolution of RNiO{sub 3} (R = Sm, Eu, Gd, Dy, Ho, Y) perovskites: Evidence for room-temperature charge disproportionation in monoclinic HoNiO{sub 3} and YNiO{sub 3}

    SciTech Connect

    Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.; Arangda, M.A.G.; Fernandez-Diaz, M.T.

    1999-05-26

    RNiO{sub 3} nickelates have been prepared under high oxygen pressure (R = Sm, Eu, Gd) or high hydrostatic pressure (R = Dy, Ho, Y) in the presence of KClO{sub 4}. The samples have been investigated at room temperature (RT) by synchrotron X-ray powder diffraction to follow the evolution of the crystal structures and microstructures along the series. The distortion of the orthorhombic (space group Pbnm) perovskite progressively increases along the series, leading for the smallest Ho{sup 3+} and Y{sup 3+} cations to a subtle monoclinic distortion (space group P2{sub 1}/n) which implies the splitting of the Ni positions in the crystal. This symmetry was confirmed by neutron powder diffraction; the crystal structures for R = Ho and Y were refined simultaneously from RT synchrotron and neutron powder diffraction data. In both perovskites the oxygen octahedra around Ni1 and Ni2 positions are significantly distorted, suggesting the manifestation of Jahn-Teller effect, which is almost absent in the nickelates` of lighter rare earths. The very distinct mean Ni-O bond distances observed for Ni1 and Ni2 atoms at RT, in the insulating regime, suggest the presence of a charge disproportionation effect, considered as driving force for the splitting of the Ni positions. The metal-insulator (MI) transitions for RNiO{sub 3} (R = Gd, Dy, Ho, Y), above room temperature, have been characterized by DSC. The transition temperatures for Gd, Dy, Ho, and Y oxides in the heating runs are 510.7, 563.9, 572.7, and 581.9 K, respectively. The increasing rate of T{sub MI} for Dy, Ho, and Y materials is lower than that expected from the variation of T{sub MI} for the larger rare earth perovskites. This is probably related to the subtle monoclinic distortion found for Ho and Y nickelates. The high-resolution synchrotron X-ray powder patterns have revealed changes in the microstructure along the series. Powder patterns for orthorhombic RNiO{sub 3} (R = Sm, Eu, Gd, Dy) display asymmetric tails for

  4. Mott metal-insulator transition on compressible lattices.

    PubMed

    Zacharias, Mario; Bartosch, Lorenz; Garst, Markus

    2012-10-26

    The critical properties of the finite temperature Mott end point are drastically altered by a coupling to crystal elasticity, i.e., whenever it is amenable to pressure tuning. Similar as for critical piezoelectric ferroelectrics, the Ising criticality of the electronic system is preempted by an isostructural instability, and long-range shear forces suppress microscopic fluctuations. As a result, the end point is governed by Landau criticality. Its hallmark is, thus, a breakdown of Hooke's law of elasticity with a nonlinear strain-stress relation characterized by a mean-field exponent. Based on a quantitative estimate, we predict critical elasticity to dominate the temperature range ΔT*/T(c)≃8%, close to the Mott end point of κ-(BEDT-TTF)(2)X. PMID:23215206

  5. Low-voltage current noise in long quantum superconductor/insulator/normal-metal/insulator/superconductor junctions.

    SciTech Connect

    Kopnin, N. B.; Galperin, Y. M.; Vinokur, V.; Materials Science Division; Helsinki Univ. Tech.; L.D. Landau Inst. for Theoretical Physics; Univ. Oslo; A.F. Ioffe Physico-Tech. Inst. of Russian Academy of Sciences

    2007-01-01

    The current noise in long superconductor/insulator/normal-metal/insulator/superconductor junctions at low temperatures is sensitive to the population of the subgap states, which is far from equilibrium even at low bias voltages. A nonequilibrium distribution is established due to an interplay between voltage-driven interlevel Landau-Zener transitions and intralevel inelastic relaxation. The Fano factor (the ratio of the zero-frequency noise to the dc current) is enhanced drastically, being proportional to the number of times which a particle flies along the Andreev trajectory before it escapes from the level due to inelastic scattering. For weak Landau-Zener transitions, the enhancement is even larger due to a smaller dc current.

  6. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    PubMed Central

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  7. Plasmonic mode interferences and Fano resonances in Metal-Insulator-Metal nanostructured interface.

    PubMed

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  8. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    NASA Astrophysics Data System (ADS)

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-09-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range.

  9. Surface polaritons of a metal-insulator-metal curved slab

    NASA Astrophysics Data System (ADS)

    Moradi, Afshin

    2016-09-01

    The properties of s- and p-polarized surface polariton modes propagating circumferentially around a portion of a cylindrical metal-insulator-metal structure are studied, theoretically. By using the Maxwell equations in conjunction with the Drude model for the dielectric function of the metals and applying the appropriate boundary conditions, the dispersion relations of surface waves for two types of modes, are derived and numerically solved. The effects of the slab curvature and insulator thickness on the propagation of electromagnetic modes are investigated. The differences of the s- and p-polarized surface modes are also shown.

  10. Mid-infrared intersubband polaritons in dispersive metal-insulator-metal resonators

    SciTech Connect

    Manceau, J.-M. Ongarello, T.; Colombelli, R.; Zanotto, S.; Sorba, L.; Tredicucci, A.; Biasiol, G.

    2014-08-25

    We demonstrate room-temperature strong coupling between a mid-infrared (λ = 9.9 μm) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k = 0 where—potentially—polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states and—simultaneously—to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the strong critical coupling concept is highlighted.

  11. Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

    SciTech Connect

    Chaudhuri, S.; Maasilta, I. J.

    2014-03-24

    We report the development of superconducting tantalum nitride (TaN{sub x}) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO{sub x} and TaO{sub x} (Cu-AlO{sub x}-Al-TaN{sub x} and Cu-TaO{sub x}-TaN{sub x}), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature T{sub C} of the TaN{sub x} film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.

  12. Metal-insulator quantum critical point beneath the high Tc superconducting dome

    PubMed Central

    Sebastian, Suchitra E.; Harrison, N.; Altarawneh, M. M.; Mielke, C. H.; Liang, Ruixing; Bonn, D. A.; Lonzarich, G. G.; Hardy, W. N.

    2010-01-01

    An enduring question in correlated systems concerns whether superconductivity is favored at a quantum critical point (QCP) characterized by a divergent quasiparticle effective mass. Despite such a scenario being widely postulated in high Tc cuprates and invoked to explain non-Fermi liquid transport signatures, experimental evidence is lacking for a critical divergence under the superconducting dome. We use ultrastrong magnetic fields to measure quantum oscillations in underdoped YBa2Cu3O6+x, revealing a dramatic doping-dependent upturn in quasiparticle effective mass at a critical metal-insulator transition beneath the superconducting dome. Given the location of this QCP under a plateau in Tc in addition to a postulated QCP at optimal doping, we discuss the intriguing possibility of two intersecting superconducting subdomes, each centered at a critical Fermi surface instability. PMID:20304800

  13. Percolation behavior in metallic-insulator composite systems and the filling factor near the percolation threshold

    NASA Astrophysics Data System (ADS)

    Mukherjee, Rupam; Mishra, Debabrata; Huang, Zhifeng; Nadgorny, Boris

    2012-10-01

    We investigate the percolation behavior in various composite metal -- insulator systems including LiCoO2/ CrO2, MgB2/Al2O3, CrO2/Al2O3, CrO2/ CaCO3. The effect of particle size and shapes in these systems has been studied to better understand the geometrical phase transitions. The power law exponent around the percolation threshold has been found to be 2.0±0.04 in all the cases, which agrees well with the theoretical result. Interestingly, the filling factor of these composite systems also exhibits the power law dependence near the percolation threshold with the value found to be dependent on the shape of the insulating particle. The exponent ranges from 0.2 to 0.4 depending on size of particles of a given shape in the composite system.

  14. Electric-field-induced Spontaneous Magnetization and Phase Transitions in Zigzag Boron Nitride Nanotubes

    PubMed Central

    Bai, Lang; Gu, Gangxu; Xiang, Gang; Zhang, Xi

    2015-01-01

    We demonstrate an alternative scheme for realizing spin polarizations in semiconductor nanostructures by an all-electric way. The electronic and magnetic properties of the model system, zigzag pristine boron nitride nanotubes (BNNTs), are investigated under a transverse electric field (E) through spin-polarized density functional theory calculations. As E increases, the band gap of BNNTs is reduced due to charge redistribution induced by the asymmetry of electrostatic potential energy, and BNNTs experience rich phase transitions, such as semiconductor-metal transition and nonmagnetic (NM) metal-ferromagnetic (FM) metal transitions. Electric-field-induced magnetization occurs when a sufficiently high density of states at the Fermi level in the vicinity of metal-insulator transition is reached due to the redistribution of electronic bands and charge transferring across the BNNTs. Further analysis show that the spontaneous magnetization is derived from the localized nature of the 2p states of B and N, and the ferromagnetic coupling is stabilized by Zener’s double-exchange mechanism. Our results may provide a viable way to realize spintronic devices for applications. PMID:26206393

  15. Stability of La2O3 Metal-Insulator-Metal Capacitors under Constant Voltage Stress

    NASA Astrophysics Data System (ADS)

    Shu-Hua Wu,; Chih-Kang Deng,; Tuo-Hung Hou,; Bi-Shiou Chiou,

    2010-04-01

    In this study, we demonstrate the stability of high-κ La2O3 metal-insulator-metal (MIM) capacitors under constant voltage stress (CVS). It was found that the variation in capacitance caused by CVS strongly depends on the injected charges regardless of stress biases. Furthermore, the quadratic voltage coefficient of capacitance (α) decreases with a logarithmic increase in dielectric loss. Charge trapping contributes to the relative capacitance variation under CVS while the reduced carrier mobility due to the stress-induced traps is responsible for the reduction of α. Additionally, high stability of 10-year lifetime is achieved for a 10-nm La2O3 MIM capacitor with an 11.4 fF/μm2 capacitance density.

  16. Stability of La2O3 Metal-Insulator-Metal Capacitors under Constant Voltage Stress

    NASA Astrophysics Data System (ADS)

    Wu, Shu-Hua; Deng, Chih-Kang; Hou, Tuo-Hung; Chiou, Bi-Shiou

    2010-04-01

    In this study, we demonstrate the stability of high-κ La2O3 metal-insulator-metal (MIM) capacitors under constant voltage stress (CVS). It was found that the variation in capacitance caused by CVS strongly depends on the injected charges regardless of stress biases. Furthermore, the quadratic voltage coefficient of capacitance (α) decreases with a logarithmic increase in dielectric loss. Charge trapping contributes to the relative capacitance variation under CVS while the reduced carrier mobility due to the stress-induced traps is responsible for the reduction of α. Additionally, high stability of 10-year lifetime is achieved for a 10-nm La2O3 MIM capacitor with an 11.4 fF/µm2 capacitance density.

  17. Magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect

    NASA Astrophysics Data System (ADS)

    Zhou, X.; Ma, L.; Shi, Z.; Fan, W. J.; Zheng, Jian-Guo; Evans, R. F. L.; Zhou, S. M.

    2015-08-01

    We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic γ -IrMn3/Y3Fe5O12(YIG ) and Pt/YIG heterostructures. For γ -IrMn3/YIG , the EAMR and the AHLE resistivity change sign with temperature due to the competition between the spin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE) induced by the interfacial antiferromagnetic uncompensated magnetic moment. In contrast, for Pt/YIG, the AHLE resistivity changes sign with temperature whereas no sign change is observed in the EAMR. This is because the MPE and the SMR play a dominant role in the AHLE and the EAMR, respectively. As different types of galvanomagnetic properties, the AHLE and the EAMR have proved vital in disentangling the MPE and the SMR in metal/insulating-ferromagnet heterostructures.

  18. Metal-insulator-metal waveguides for particle trapping and separation.

    PubMed

    Khan, Saara A; Chang, Chia-Ming; Zaidi, Zain; Shin, Wonseok; Shi, Yu; Ellerbee Bowden, Audrey K; Solgaard, Olav

    2016-06-21

    Optical particle trapping and separation are essential techniques in the fields of biology and chemistry. In many applications, it is important to identify passive separation techniques that only rely on intrinsic forces in a system with a fixed device geometry. We present a dual-waveguide sorter that utilizes the loss of metal-insulator-metal (MIM) waveguides for completely passive particle trapping and separation and is created using a unique angle sidewall deposition process. Our experiments show that an inner Au-Si3N4-Au waveguide is able to trap particles within the propagation distance of its dominant modes and release the particles into an outer Au-H2O-Au waveguide. The outer waveguide then propels the particles and separates them by size. The separation results are accurately modeled by a first-principles, analytical model. PMID:27216706

  19. Graphene oxide-based flexible metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Bag, A.; Hota, M. K.; Mallik, S.; Maiti, C. K.

    2013-05-01

    This work explores the fabrication of graphene oxide (GO)-based metal-insulator-metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ˜4 fF µm-2 measured at 1 MHz and permittivity of ˜6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending.

  20. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO x

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Antonov, I. N.; Kasatkin, A. P.; Korolev, D. S.; Belov, A. I.; Mikhaylov, A. N.; Tetel'baum, D. I.

    2016-05-01

    The change of the immitance of the metal-insulator-metal memristive structures based on SiOx, which is observed during electroforming and resistive switching, confirms the formation of conducting channels (filaments) in the insulator during forming and their rupture upon a transition of the structure to a highresistance state. The observed switching of the differential capacitance and conductivity synchronously with the switching of current (resistance) can substantially extend the functional applications of memristive devices of this type.

  1. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE PAGESBeta

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  2. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  3. Nanoengineering strategies for metal-insulator-metal electrostatic nanocapacitors.

    PubMed

    Haspert, Lauren C; Lee, Sang Bok; Rubloff, Gary W

    2012-04-24

    Nanostructures can improve the performance of electrical energy storage devices. Recently, metal-insulator-metal (MIM) electrostatic capacitors fabricated in a three-dimensional cylindrical nanotemplate of anodized aluminum oxide (AAO) porous film have shown profound increase in device capacitance (100× or more) over planar structures. However, inherent asperities at the top of the nanostructure template cause locally high field strengths and lead to low breakdown voltage. This severely limits the usable voltage, the associated energy density (1/2 CV(2)), and thus the operational charge-discharge window of the device. We describe an electrochemical technique, complementary to the self-assembled template pore formation process in the AAO film, that provides nanoengineered topographies with significantly reduced local electric field concentrations, enabling breakdown fields up to 2.5× higher (to >10 MV/cm) while reducing leakage current densities by 1 order of magnitude (to ∼10(-10) A/cm(2)). In addition, we consider and optimize the AAO template and nanopore dimensions, increasing the capacitance per planar unit area by another 20%. As a result, the MIM nanocapacitor devices achieve an energy density of ∼1.5 Wh/kg--the highest reported. PMID:22394362

  4. Metal-Insulator Photocathode Heterojunction for Directed Electron Emission

    SciTech Connect

    Droubay, Timothy C.; Chambers, Scott A.; Joly, Alan G.; Hess, Wayne P.; Nemeth, Karoly; Harkay, Katherine C.; Spentzouris, Linda

    2014-02-14

    New photocathode materials capable of producing intense and directed electron pulses are needed for development of next generation light sources and dynamic transmission electron microscopy. Ideal photocathodes should have high photoemission quantum efficiency (QE) and be capable of delivering collimated and well-shaped pulses of consistent charge under high-field operating conditions. High-brightness and low-intrinsic emittance electron pulses have been predicted for hybrid metal-insulator photocathode designs constructed from three to four monolayer MgO films on atomically flat silver. Here we use angle-resolved photoelectron spectroscopy to confirm directional photoemission and a large increase in QE under ultraviolet laser excitation of an ultrathin MgO film on Ag(001). We observe new low-binding energy photoemission, not seen for Ag(001), and greater electron emission in the normal direction. Under 4.66 eV laser excitation, the photoemission quantum efficiency of the MgO/Ag(001) hybrid photocathode is a factor of seven greater than that for clean Ag(001).

  5. Strains and photovoltaic response in Ta-sputtered Si metal-insulator-semiconductor solar cells

    NASA Astrophysics Data System (ADS)

    Lalevic, B.; Murty, K.; Ito, T.; Kalman, Z. H.; Weissmann, S.

    1981-07-01

    Deformation by bending of Si or Si-SiO2 wafers is achieved by sputter deposition of tantalum films. Strains induced at Si-SiO2 interface and in Ta films are investigated using a combination of X-ray diffraction, electron diffraction, and transmission electron microscopy. Thin Ta film deposits are found to have predominantly a fcc structure, while thicker films have the normal bcc structure with certain admixture of fcc. Film strains generated by the coexistence of the polymorph structure are accommodated by formation of misfit dislocations at the film-Si substrate interface. The effect of the induced stress on the electronic parameters characterizing the Si-SiO2 interface is studied in the metal-oxide-semiconductor structure, and for the effect on photovoltaic response a metal-insulator-semiconductor solar cell configuration is used. Large changes with increasing stress are observed in the values of recombination time, capture cross section, and diffusion length and in sharply decreased conversion efficiency, fill factor, open-circuit voltage, and short-circuit current.

  6. Intrinsic carrier effects in HfO2-Ge metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Dimoulas, A.; Vellianitis, G.; Mavrou, G.; Evangelou, E. K.; Sotiropoulos, A.

    2005-05-01

    Germanium metal-insulator-semiconductor capacitors with HfO2 or other high-κ gate dielectrics show unusual low frequency behavior of the high frequency (1 kHz or higher) capacitance-voltage characteristics when biased in inversion. Here, we provide evidence that this effect is partly due to the high intrinsic carrier concentration ni in Ge. We show in particular that the ac conductance in inversion is thermally activated and it is governed either by generation-recombination processes in depletion, varying proportional to ni or by diffusion-limited processes varying as ni2, depending on whether the temperature is below or above 45 °C, respectively. From these measurements, we also show that the minority carrier response time in Ge is very short, in the microsecond range (much shorter than in Si), depending inversely proportional to ni at room temperature. This means that due to high ni, the inversion charge is built fast in response to high frequency signals at the gate, inducing the observed low frequency behavior.

  7. Optical properties and solar selectivity of metal-insulator composite films

    NASA Astrophysics Data System (ADS)

    Craighead, H. G.

    1980-03-01

    The results of an experimental study of metal-insulator composite films are described. A description of the entire process of sample production, characterization, experimental examination and ultimate demonstration of an application is included. The problem considered was to measure the optical constants of metal insulator-composite materials and check the applicability of effective medium-composite materials and check the applicability of effective medium theories in predicting their optical properties. With this knowledge, there was also the goal of designing and fabricating efficient and durable solar photothermal absorber surfaces. The method used for controlled coevaporation of microscopically segregated metal-insulator composites is described. With this technique many different composites were produced; the most notable ones were Ni/Al2O3, Au/Al2O3, Au/MgO, Ag/MgO and Pt/Al2O3.

  8. Advanced piezoresistance of extended metal-insulator core-shell nanoparticle assemblies.

    PubMed

    Athanassiou, E K; Krumeich, F; Grass, R N; Stark, W J

    2008-10-17

    Assembled metal-insulator nanoparticles with a core-shell geometry provide access to materials containing a large number (>10(6)) of tunneling barriers. We demonstrate the production of ceramic coated metal nanoparticles exhibiting an exceptional pressure-sensitive conductivity. We further show that graphene bi- and trilayers on 20 nm copper nanoparticles are insulating in such a core-shell geometry and show a similar pressure-dependent conductivity. This demonstrates that core-shell metal-insulator assemblies offer a route to alternative sensing materials. PMID:18999701

  9. Fano Resonance Based on Metal-Insulator-Metal Waveguide-Coupled Double Rectangular Cavities for Plasmonic Nanosensors.

    PubMed

    Zhang, Zhidong; Luo, Liang; Xue, Chenyang; Zhang, Wendong; Yan, Shubin

    2016-01-01

    A refractive index sensor based on metal-insulator-metal (MIM) waveguides coupled double rectangular cavities is proposed and investigated numerically using the finite element method (FEM). The transmission properties and refractive index sensitivity of various configurations of the sensor are systematically investigated. An asymmetric Fano resonance lineshape is observed in the transmission spectra of the sensor, which is induced by the interference between a broad resonance mode in one rectangular and a narrow one in the other. The effect of various structural parameters on the Fano resonance and the refractive index sensitivity of the system based on Fano resonance is investigated. The proposed plasmonic refractive index sensor shows a maximum sensitivity of 596 nm/RIU. PMID:27164101

  10. Fano Resonance Based on Metal-Insulator-Metal Waveguide-Coupled Double Rectangular Cavities for Plasmonic Nanosensors

    PubMed Central

    Zhang, Zhidong; Luo, Liang; Xue, Chenyang; Zhang, Wendong; Yan, Shubin

    2016-01-01

    A refractive index sensor based on metal-insulator-metal (MIM) waveguides coupled double rectangular cavities is proposed and investigated numerically using the finite element method (FEM). The transmission properties and refractive index sensitivity of various configurations of the sensor are systematically investigated. An asymmetric Fano resonance lineshape is observed in the transmission spectra of the sensor, which is induced by the interference between a broad resonance mode in one rectangular and a narrow one in the other. The effect of various structural parameters on the Fano resonance and the refractive index sensitivity of the system based on Fano resonance is investigated. The proposed plasmonic refractive index sensor shows a maximum sensitivity of 596 nm/RIU. PMID:27164101

  11. Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds

    NASA Astrophysics Data System (ADS)

    Kim, Jeongwoo; Jhi, Seung-Hoon

    2015-05-01

    The mechanism for the fast switching between amorphous, metastable, and crystalline structures in chalcogenide phase-change materials has been a long-standing puzzle. Based on first-principles calculations, we study the atomic and electronic properties of metastable Ge2Sb2Te5 and investigate the atomic disorder to understand the transition between crystalline hexagonal and cubic structures. In addition, we study the topological insulating property embedded in these compounds and its evolution upon structural changes and atomic disorder. We also discuss the role of the surface-like states arising from the topological insulating property in the metal-insulator transition observed in the hexagonal structure.

  12. Novel Way to Characterize Metal-Insulator-Metal Devices via Nanoindentation: Preprint

    SciTech Connect

    Periasamy, P.; Packard, C. E.; O?Hayre, R. P.; Berry, J. J.; Parilla, P. A.; Ginley, D. S.

    2011-07-01

    Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is the point-contact diode where a metal tip serves as one of the metals in the MIM device. The intrinsic advantage of the point-contact configuration is that it is possible to achieve very small contact areas for the device thereby allowing very high-frequency operation. In this study, precise control over the contact area and penetration depth of an electrically conductive tip into a metal/insulator combination is achieved using a nanoindenter with in-situ electrical contact resistance measurement capabilities. A diamond probe tip, doped (degeneratively) with boron for conductivity, serves as the point contact and second 'metal' (b-Diamond) of the MIM diode. The base layer consists of Nb/Nb2O5 thin films on Si substrates and serves as the first metal /insulator combination of the MIM structure. The current-voltage response of the diodes is measured under a range of conditions to assess the validity and repeatability of the technique. Additionally, we compare the results of this technique to those acquired using a bent-wire approach and find that Nb/Nb2O5/b-Diamond MIM devices show an excellent asymmetry (60-300) and nonlinearity values (~6-9). This technique shows great promise for screening metal-insulator combinations for performance without the uncertainty that stems from a typical bent-wire point-contact.

  13. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  14. Contemporary Research of Dynamically Induced Phase Transitions

    NASA Astrophysics Data System (ADS)

    Hull, Lawrence

    2015-06-01

    Dynamically induced phase transitions in metals, within the present discussion, are those that take place within a time scale characteristic of the shock waves and any reflections or rarefactions involved in the loading structure along with associated plastic flow. Contemporary topics of interest include the influence of loading wave shape, the effect of shear produced by directionality of the loading relative to the sample dimensions and initial velocity field, and the loading duration (kinetic effects, hysteresis) on the appearance and longevity of a transformed phase. These topics often arise while considering the loading of parts of various shapes with high explosives, are typically two or three-dimensional, and are often selected because of the potential of the transformed phase to significantly modify the motion. In this paper, we look at current work on phase transitions in metals influenced by shear reported in the literature, and relate recent work conducted at Los Alamos on iron's epsilon phase transition that indicates a significant response to shear produced by reflected elastic waves. A brief discussion of criteria for the occurrence of stress induced phase transitions is provided. Closing remarks regard certain physical processes, such as fragmentation and jet formation, which may be strongly influenced by phase transitions. Supported by the DoD/DOE Joint Munitions Technology Development Program.

  15. Electrically induced phase transition in α -(BEDT-TTF)2I3 : Indications for Dirac-like hot charge carriers

    NASA Astrophysics Data System (ADS)

    Peterseim, T.; Ivek, T.; Schweitzer, D.; Dressel, M.

    2016-06-01

    The two-dimensional organic conductor α -(BEDT-TTF)2I3 undergoes a metal-insulator transition at TCO=135 K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties in order to explore the field- and temperature-dependent dynamics. At a certain threshold field, the system switches from a low-conducting to a high-conducting state, accompanied by a negative differential resistance. Our time-dependent infrared investigations indicate that close to TCO, the strong electric field pushes the crystal into a metallic state with optical properties similar to the one for T >TCO . Well into the insulating state, however, at T =80 K , the spectral response evidences a completely different electronically induced high-conducting state. Applying a two-state model of hot electrons explains the observations by excitation of charge carriers with a high mobility. They resemble the Dirac-like charge carriers with a linear dispersion of the electronic bands found in α -(BEDT-TTF)2I3 at high pressure. Extensive numerical simulations quantitatively reproduce our experimental findings in all details.

  16. Pressure-induced phase transition in pentacene

    NASA Astrophysics Data System (ADS)

    Farina, L.; Brillante, A.; Della Valle, R. G.; Venuti, E.; Amboage, M.; Syassen, K.

    2003-07-01

    We have recently studied two solid phases of bulk pentacene (polymorphs H and C) by means of lattice phonon Raman spectroscopy. The assignment, previously based on lattice dynamics calculations alone, is now verified by X-ray diffraction measurements, conclusively confirming the existence of both polymorphs. Furthermore, Raman phonon spectra indicate a pressure-induced phase transition where the polymorph C (lower density phase) transforms to the H form (higher density phase). The onset pressure for the phase transition is only 0.2 GPa. The phase change is irreversible.

  17. Large epitaxial bi-axial strain induces a Mott-like phase transition in VO{sub 2}

    SciTech Connect

    Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

    2014-08-18

    The metal insulator transition (MIT) in vanadium dioxide (VO{sub 2}) has been an important topic for recent years. It has been generally agreed upon that the mechanism of the MIT in bulk VO{sub 2} is considered to be a collaborative Mott-Peierls transition, however, the effect of strain on the phase transition is much more complicated. In this study, the effect of the large strain on the properties of VO{sub 2} films was investigated. One remarkable result is that highly strained epitaxial VO{sub 2} thin films were rutile in the insulating state as well as in the metallic state. These highly strained VO{sub 2} films underwent an electronic phase transition without the concomitant Peierls transition. Our results also show that a very large tensile strain along the c-axis of rutile VO{sub 2} resulted in a phase transition temperature of ∼433 K, much higher than in any previous report. Our findings elicit that the metal insulator transition in VO{sub 2} can be driven by an electronic transition alone, rather the typical coupled electronic-structural transition.

  18. Directional coupler and nonlinear Mach-Zehnder interferometer based on metal-insulator-metal plasmonic waveguide.

    PubMed

    Pu, Mingbo; Yao, Na; Hu, Chenggang; Xin, Xuecheng; Zhao, Zeyu; Wang, Changtao; Luo, Xiangang

    2010-09-27

    Directional coupler (DC) and nonlinear Mach-Zehnder interferometer (MZI) based on metal-insulator-metal (MIM) plasmonic waveguide are investigated numerically. We show that the coupling length increases almost linearly with the wavelength and this property is utilized in the design of wavelength division multiplexer (WDM). A nonlinear MZI, with one branch filled with Kerr nonlinear medium, is built to ensure controlling light with light. Employing nonlinear processes including self-phase modulation (SPM) and cross-phase modulation (XPM), intensity-based router and all-optical switch are realized. PMID:20940998

  19. A Refractive Index Sensor Based on a Metal-Insulator-Metal Waveguide-Coupled Ring Resonator

    PubMed Central

    Yan, Shu-Bin; Luo, Liang; Xue, Chen-Yang; Zhang, Zhi-Dong

    2015-01-01

    A refractive index sensor composed of two straight metal-insulator-metal waveguides and a ring resonator is presented. One end of each straight waveguide is sealed and the other end acts as port. The transmission spectrum and magnetic field distribution of this sensor structure are simulated using finite-difference time-domain method (FDTD). The results show that an asymmetric line shape is observed in the transmission spectrum, and that the transmission spectrum shows a filter-like behavior. The quality factor and sensitivity are taken to characterize its sensing performance and filter properties. How structural parameters affect the sensing performance and filter properties is also studied. PMID:26610491

  20. A Refractive Index Sensor Based on a Metal-Insulator-Metal Waveguide-Coupled Ring Resonator.

    PubMed

    Yan, Shu-Bin; Luo, Liang; Xue, Chen-Yang; Zhang, Zhi-Dong

    2015-01-01

    A refractive index sensor composed of two straight metal-insulator-metal waveguides and a ring resonator is presented. One end of each straight waveguide is sealed and the other end acts as port. The transmission spectrum and magnetic field distribution of this sensor structure are simulated using finite-difference time-domain method (FDTD). The results show that an asymmetric line shape is observed in the transmission spectrum, and that the transmission spectrum shows a filter-like behavior. The quality factor and sensitivity are taken to characterize its sensing performance and filter properties. How structural parameters affect the sensing performance and filter properties is also studied. PMID:26610491

  1. Metal/insulator/semiconductor tunnel diodes formed by the oxidation of polycrystaline diamond films

    NASA Astrophysics Data System (ADS)

    Gonon, P.; Deneuville, A.; Gheeraert, E.; Fontaine, F.; Lenormand, F.

    1994-09-01

    Polycrystalline diamond films have been annealed under O2 at 600 C, or have been dipped in a H2SO4/CrO3 solution. Both treatments result in the formation of a thin electrically insulating layer at the top of the films. Subsequent metallization results in the formation of a metal/insulator/diamond tunnel diode with a potential barrier for holes of 0.85 eV, and with a Fermi level localized at about 0.45 eV above the diamond valence band.

  2. Metal-insulator-metal capacitors' current instability improvement using dielectric stacks to prevent oxygen vacancies formation

    NASA Astrophysics Data System (ADS)

    Manceau, J.-P.; Bruyere, S.; Jeannot, S.; Sylvestre, A.; Gonon, P.

    2007-09-01

    Current instability in metal-oxide-semiconductor and metal-insulator-metal (MIM) capacitors has been previously reported to be a potential reliability issue. This letter intends to study a particular way to reduce these current instabilities with time in high-κ MIM capacitors. It consists in the introduction of a stable dielectric layer between the high-κ dielectric and the electrodes in order to prevent oxygen vacancy formation at interfaces. When applied to Ta2O5 capacitors, the deposition of a thin layer of Al2O3 in the range of a few tens of angstroms enables the strong reduction of current instabilities while maintaining good electrical performances.

  3. Reliability of HfO2 metal-insulator-metal capacitors under AC stress

    NASA Astrophysics Data System (ADS)

    Kassmi, M.; Jomni, F.; Gonon, P.; Khaldi, O.; Latu-Romain, L.; Mannequin, C.; Bsiesy, A.; Basrour, S.; Yangui, B.

    2016-04-01

    The electrical reliability of HfO2 based metal-insulator-metal capacitors is investigated under AC stress voltage. The capacitance-time (C-t) and conductance-time (G-t) responses are studied for different stress amplitudes and frequencies. Time-to-breakdown is observed to strongly depend on the electrode nature. Electrical degradation is discussed via a model based on oxygen vacancy/oxygen ions generation. Defect generation is controlled by the injecting nature of electrodes. Partial recovery, and so time-to-breakdown, are controlled by the ability of electrodes to store oxygen.

  4. Metal-insulator-semi-conductor studies of lead telluride. [capacitance and conductance-voltage characteristics

    NASA Technical Reports Server (NTRS)

    Lilly, D. A.; Joslin, D. E.; Kan, H. K. A.

    1976-01-01

    The capacitance and conductance-voltage characteristics were measured on metal-insulator-semiconductor capacitors fabricated with zirconium dioxide films on single-crystal lead telluride. At 77 K, on both n- and p-type substrates, evidence of surface potential control was obtained. Comparison of the measured capacitance-voltage characteristics with those calculated from the equilibrium solution of the one-dimensional Poisson equation indicated qualitative agreement, although the slope of the measured capacitance in the region near the capacitance minimum was less steep than calculated.

  5. Flexible metal-insulator-metal capacitors on polyethylene terephthalate plastic substrates

    NASA Astrophysics Data System (ADS)

    Hota, M. K.; Bera, M. K.; Maiti, C. K.

    2012-10-01

    Realization of flexible electronic devices on polyethylene terephthalate flexible plastic substrates is reported. Metal-insulator-metal capacitors have been fabricated using radio frequency sputtered deposited thin films of Nb2O5 on the flexible substrate. Good electrical characteristics have been obtained in terms of quadratic voltage coefficient of capacitance, high capacitance density (˜ 11 fF µm-2), high dielectric constant (˜37) and low dissipation factor (<0.1). Besides, in repetitive bending test, the devices show excellent electrical stability and high mechanical flexibility due to the high ductility of niobium and low-temperature processing used in this study.

  6. Conduction Mechanism and Reliability Characteristics of a Metal-Insulator-Metal Capacitor with Single ZrO2 Layer

    NASA Astrophysics Data System (ADS)

    Kwon, Hyuk-Min; Han, In-Shik; Park, Sang-Uk; Bok, Jung-Deuk; Jung, Yi-Jung; Shin, Hong-Sik; Kang, Chang-Yong; Lee, Byoung-Hun; Jammy, Raj; Lee, Ga-Won; Lee, Hi-Deok

    2011-04-01

    In this paper, the electrical characteristics and reliability of ZrO2-based metal-insulator-metal (MIM) capacitors are investigated. High capacitance density of 15.3 fF/µm2 was achieved for ZrO2 MIM capacitors, which is acceptable for the reported MIM capacitors. Schottky emission at the low field region is not a dominant mechanism, and Frenkel-Poole emission is the dominant mechanism at the high electric field region. The extracted dynamic constant and trap energy level were 4.013 and 0.963 eV, respectively. The reduced trap energy level with increasing electric field is due to a rise in the field-induced barrier-lowering effect. The variation of α as a function of stress time under constant voltage stress (CVS) gradually decreases, while the variation of ΔCstress/C0 under CVS increases because the generation of new dipoles in the high-κ dielectric under CVS may cause charge trapping in the high-κ dielectric.

  7. Fingerprints of the field-induced Berezinskii-Kosterlitz-Thouless transition in quasi-two-dimensional quantum magnets

    NASA Astrophysics Data System (ADS)

    Orendáčová, Alžbeta

    The two-dimensional (2d) easy-plane (XY) model provides a prototypical description of 2d systems exhibiting topological excitations, which drive the Berezinskii-Kosterlitz-Thouless (BKT) transition that occurs in 2d superfluids, electron plasmas, Josephson junction arrays, ultracold atomic 2d Bose gasses, etc. The excitations in the 2d XY model are spin waves and vortices. In the BKT scenario, at low temperatures, all vortices (V) and antivortices (AV) are bound to V-AV pairs, and spin waves dominate in this quasi-long-range-ordered phase with an infinite correlation length, ξ, and an algebraic decay of correlations. At a critical temperature, TBKT, the V-AV pairs start to unbind, driving the transition to a free vortex phase above TBKT, characterized by an exponential divergence of ξ. Vortices remain stable also in quantum 2d anisotropic Heisenberg systems with a very weak XY anisotropy. The BKT scenario appears even in 2d isotropic Heisenberg magnets due to frustration or an external magnetic field. I will focus on quasi-2d spin 1/2 Heisenberg antiferromagnets with extremely weak spin anisotropy. These highly anisotropic layered Cu(II) organo-metallic insulators with relatively low saturation fields, about 6 T, enabled a comprehensive study in a wide range of magnetic fields and temperatures. A response of all compounds to the application of a magnetic field mimics 2d behavior with fingerprints of a field-induced Berezinskii-Kosterlitz-Thouless phase transition. ITMS 26220120005, VEGA 1/0143/13 and APVV-14-0073 are acknowledged for a financial support.

  8. All-Graphene Planar Self-Switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes

    PubMed Central

    Al-Dirini, Feras; Hossain, Faruque M.; Nirmalathas, Ampalavanapillai; Skafidas, Efstratios

    2014-01-01

    Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of nano-scale planar devices named Graphene Self-Switching MISFEDs (Metal-Insulator-Semiconductor Field-Effect Diodes), in which Graphene is used as the metal and the semiconductor concurrently. The presented devices exhibit excellent current-voltage characteristics while occupying an ultra-small area with sub-10 nm dimensions and an ultimate thinness of a single atom. Quantum mechanical simulation results, based on the Extended Huckel method and Nonequilibrium Green's Function Formalism, show that a Graphene Self-Switching MISFED with a channel as short as 5 nm can achieve forward-to-reverse current rectification ratios exceeding 5000. PMID:24496307

  9. Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

    NASA Astrophysics Data System (ADS)

    Vilan, Ayelet

    2016-01-01

    Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

  10. Shear induced phase transitions induced in edible fats

    NASA Astrophysics Data System (ADS)

    Mazzanti, Gianfranco; Welch, Sarah E.; Marangoni, Alejandro G.; Sirota, Eric B.; Idziak, Stefan H. J.

    2003-03-01

    The food industry crystallizes fats under different conditions of temperature and shear to obtain products with desired crystalline phases. Milk fat, palm oil, cocoa butter and chocolate were crystallized from the melt in a temperature controlled Couette cell. Synchrotron x-ray diffraction studies were conducted to examine the role of shear on the phase transitions seen in edible fats. The shear forces on the crystals induced acceleration of the alpha to beta-prime phase transition with increasing shear rate in milk fat and palm oil. The increase was slow at low shear rates and became very strong above 360 s-1. In cocoa butter the acceleration between beta-prime-III and beta-V phase transition increased until a maximum of at 360 s-1, and then decreased, showing competition between enhanced heat transfer and viscous heat generation.

  11. Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds

    SciTech Connect

    Kim, Jeongwoo; Jhi, Seung-Hoon

    2015-05-21

    The mechanism for the fast switching between amorphous, metastable, and crystalline structures in chalcogenide phase-change materials has been a long-standing puzzle. Based on first-principles calculations, we study the atomic and electronic properties of metastable Ge{sub 2}Sb{sub 2}Te{sub 5} and investigate the atomic disorder to understand the transition between crystalline hexagonal and cubic structures. In addition, we study the topological insulating property embedded in these compounds and its evolution upon structural changes and atomic disorder. We also discuss the role of the surface-like states arising from the topological insulating property in the metal-insulator transition observed in the hexagonal structure.

  12. First-principles study of metal-insulator control by ion adsorption on Ti2C MXene dioxide monolayers

    NASA Astrophysics Data System (ADS)

    Ando, Yasunobu; Watanabe, Satoshi

    2016-01-01

    Through first-principles calculations using density functional theory, we investigate the possibility of controlling the metal-insulator properties of the Ti2C MXene dioxide Ti2CO2 by ion adsorption. Our simulation reveals that Ti2CO2 is insulating with an indirect band gap of 0.44 eV. Upon atomic adsorption of H, Li, or Na, Ti2CO2 becomes metallic. This metal-insulator change may be used to produce switching devices with a high on/off ratio and low energy consumption by controlling ionic movement, as in ion batteries.

  13. Quantum criticality at the Anderson transition: A typical medium theory perspective

    NASA Astrophysics Data System (ADS)

    Mahmoudian, Samiyeh; Tang, Shao; Dobrosavljević, Vladimir

    2015-10-01

    We present a complete analytical and numerical solution of the typical medium theory (TMT) for the Anderson metal-insulator transition. This approach self-consistently calculates the typical amplitude of the electronic wave functions, thus representing the conceptually simplest order-parameter theory for the Anderson transition. We identify all possible universality classes for the critical behavior, which can be found within such a mean-field approach. This provides insights into how interaction-induced renormalizations of the disorder potential may produce qualitative modifications of the critical behavior. We also formulate a simplified description of the leading critical behavior, thus obtaining an effective Landau theory for Anderson localization.

  14. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    DOE PAGESBeta

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; Zhou, Shengqiang; Li, Aidong; Wu, Di

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variablemore » range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.« less

  15. Resistance noise at the metal-insulator transition in thermochromic VO2 films

    NASA Astrophysics Data System (ADS)

    Topalian, Zareh; Li, Shu-Yi; Niklasson, Gunnar A.; Granqvist, Claes G.; Kish, Laszlo B.

    2015-01-01

    Thermochromic VO2 films were prepared by reactive DC magnetron sputtering onto heated sapphire substrates and were used to make 100-nm-thick samples that were 10 μm wide and 100 μm long. The resistance of these samples changed by a factor ˜2000 in the 50 < Ts < 70 °C range of temperature Ts around the "critical" temperature Tc between a low-temperature semiconducting phase and a high-temperature metallic-like phase of VO2. Power density spectra S(f) were extracted for resistance noise around Tc and demonstrated unambiguous 1/f behavior. Data on S(10 Hz)/Rs2 scaled as Rsx, where Rs is sample resistance; the noise exponent x was -2.6 for Ts < Tc and +2.6 for Ts > Tc. These exponents can be reconciled with the Pennetta-Trefán-Reggiani theory [Pennetta et al., Phys. Rev. Lett. 85, 5238 (2000)] for lattice percolation with switching disorder ensuing from random defect generation and healing in steady state. Our work hence highlights the dynamic features of the percolating semiconducting and metallic-like regions around Tc in thermochromic VO2 films.

  16. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    SciTech Connect

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance the binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.

  17. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    DOE PAGESBeta

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance themore » binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.« less

  18. Metal-Insulator Transition Associated with [0110] Charge Ordering in (EDO-TTF)_2X

    NASA Astrophysics Data System (ADS)

    Drozdova, O.; Tanner, D. B.; Yakushi, K.; Ota, A.; Yamochi, H.; Saito, G.

    2002-03-01

    Optical (polarized infrared-visible reflectance and Raman) spectra of (EDO-TTF)_2X (X= PF_6, T_MI= 280 K; AsF_6, T_MI= 268 K) have been measured at temperatures above and below T_MI. From the frequencies of three charge-sensitive C=C stretching modes of EDO-TTF, the molecular charge was estimated as uniform +0.5 split below T_MI to (0, +1). In the electronic spectra along the stack, the main conductivity peak vanishes and instead, two charge transfer bands CT1 (4500 cm-1) and CT2 (11150 cm-1) appear corresponding to D^0D^+...D^+D^0 and D^+D^+...D^2+D^0 processes, respectively. For the first time, the electron-molecular vibration (EMV) coupling between two C=C modes of D^+ and CT2 was observed in the polarized Raman spectra. The optical data point out the importance of the EMV coupling in the formation of the [0110] charge-ordering pattern.

  19. The Two-Commponent Model and 2d Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Castner, Theodore G.

    2004-03-01

    Fermi liquid theory for the 2d MIT is extended to include the soft correlation gap (CG) in the density-of-states N(E) from carrier interactions [N(E)α(E-E_F)^t] producing a minimum in N(E) at E_F. The results are consistent with the scaling form g=g_cexp(xT_o/T) in a limited T-regime, but not as Tarrow0 ruling out the perfect conductor scenario. The two-component model of itinerant plus localized electrons n_i+n_loc=n=n_c(1+x) for n>nc is an essential feature and allows a full explanation of the T-dependence of the metallic resistivity ratio ρ_i(T)/ρ_i(0) [ρ_i= 1/(σ-σ_c)] including the maximum at T_max. The results explain the Hanein et al. data^1 for p-type GaAs and show p_i(T)/p_i(0)=1+T/T_phi in a restricted T-range where T_phi=xTc [T_c=E_c/k, E_c=mobility edge] as x=p/p_c-1 goes to 0. The correction to EF from the soft CG [of width |Delta_c] yields a constant ratio E_F/Δc as x goes to 0. The origin of the nonuniversal gc [ρc at x=0] and implications for the beta function β(g)=ln(g/g_c) and single particle scaling will be discussed. 1. Y. Hanein et al., PRL80, 1288 (1998);Phys.Rev.B58, R13338 (1998).

  20. Magnetism and metal-insulator transition in oxygen deficient SrTiO3

    NASA Astrophysics Data System (ADS)

    Lopez-Bezanilla, Alejandro; Ganesh, P.; Littlewood, Peter

    2015-03-01

    We report new findings in the electronic structure and magnetism of oxygen vacancies in SrTiO3. By means of first-principles calculations we show that the appearance of magnetism in oxygen-deficient SrTiO3 is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. While an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state with emergent local moments. Strong local lattice distortions enhance the binding of this state. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient SrTiO3, which may have important implications in the design of switchable magneto-optic devices. AL-B and PBL were supported by DOE-BES under Contract No. DE-AC02-06CH11357. PG was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT- Battelle, LLC, for the US Department of Energy.

  1. Does sex induce a phase transition?

    NASA Astrophysics Data System (ADS)

    de Oliveira, P. M. C.; Moss de Oliveira, S.; Stauffer, D.; Cebrat, S.; Pękalski, A.

    2008-05-01

    We discovered a dynamic phase transition induced by sexual reproduction. The dynamics is a pure Darwinian rule applied to diploid bit-strings with both fundamental ingredients to drive Darwin's evolution: (1) random mutations and crossings which act in the sense of increasing the entropy (or diversity); and (2) selection which acts in the opposite sense by limiting the entropy explosion. Selection wins this competition if mutations performed at birth are few enough, and thus the wild genotype dominates the steady-state population. By slowly increasing the average number m of mutations, however, the population suddenly undergoes a mutational degradation precisely at a transition point mc. Above this point, the “bad” alleles (represented by 1-bits) spread over the genetic pool of the population, overcoming the selection pressure. Individuals become selectively alike, and evolution stops. Only below this point, m < mc, evolutionary life is possible. The finite-size-scaling behaviour of this transition is exhibited for large enough “chromosome” lengths L, through lengthy computer simulations. One important and surprising observation is the L-independence of the transition curves, for large L. They are also independent on the population size. Another is that mc is near unity, i.e. life cannot be stable with much more than one mutation per diploid genome, independent of the chromosome length, in agreement with reality. One possible consequence is that an eventual evolutionary jump towards larger L enabling the storage of more genetic information would demand an improved DNA copying machinery in order to keep the same total number of mutations per offspring.

  2. Amplification of hot electron flow by the surface plasmon effect on metal-insulator-metal nanodiodes.

    PubMed

    Lee, Changhwan; Nedrygailov, Ievgen I; Lee, Young Keun; Ahn, Changui; Lee, Hyosun; Jeon, Seokwoo; Park, Jeong Young

    2015-11-01

    Au-TiO2-Ti nanodiodes with a metal-insulator-metal structure were used to probe hot electron flows generated upon photon absorption. Hot electrons, generated when light is absorbed in the Au electrode of the nanodiode, can travel across the TiO2, leading to a photocurrent. Here, we demonstrate amplification of the hot electron flow by (1) localized surface plasmon resonance on plasmonic nanostructures fabricated by annealing the Au-TiO2-Ti nanodiodes, and (2) reducing the thickness of the TiO2. We show a correlation between changes in the morphology of the Au electrodes caused by annealing and amplification of the photocurrent. Based on the exponential dependence of the photocurrent on TiO2 thickness, the transport mechanism for the hot electrons across the nanodiodes is proposed. PMID:26451470

  3. Amplification of hot electron flow by the surface plasmon effect on metal-insulator-metal nanodiodes

    NASA Astrophysics Data System (ADS)

    Lee, Changhwan; Nedrygailov, Ievgen I.; Lee, Young Keun; Ahn, Changui; Lee, Hyosun; Jeon, Seokwoo; Park, Jeong Young

    2015-11-01

    Au-TiO2-Ti nanodiodes with a metal-insulator-metal structure were used to probe hot electron flows generated upon photon absorption. Hot electrons, generated when light is absorbed in the Au electrode of the nanodiode, can travel across the TiO2, leading to a photocurrent. Here, we demonstrate amplification of the hot electron flow by (1) localized surface plasmon resonance on plasmonic nanostructures fabricated by annealing the Au-TiO2-Ti nanodiodes, and (2) reducing the thickness of the TiO2. We show a correlation between changes in the morphology of the Au electrodes caused by annealing and amplification of the photocurrent. Based on the exponential dependence of the photocurrent on TiO2 thickness, the transport mechanism for the hot electrons across the nanodiodes is proposed.

  4. Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

    PubMed

    Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

    2016-03-01

    We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination. PMID:26886870

  5. Microrefrigeration by a pair of normal metal/insulator/superconductor junctions

    NASA Technical Reports Server (NTRS)

    Leivo, M. M.; Pekola, J. P.; Averin, D. V.

    1995-01-01

    We suggest and demonstrate experimentally that two normal metal/insulator/superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal-state junction resistences of 1.0 and 1.1 kOmega is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 micrometers(exp 2) at T = 300 mK. This cooling power density implies that scaling of junction area up to about 1 mm(exp 2) should bring the cooling power into the microW range.

  6. Influence of graphene oxide on metal-insulator-semiconductor tunneling diodes

    PubMed Central

    2012-01-01

    In recent years, graphene studies have increased rapidly. Graphene oxide, which is an intermediate product to form graphene, is insulating, and it should be thermally reduced to be electrically conductive. We herein describe an attempt to make use of the insulating properties of graphene oxide. The graphene oxide layers are deposited onto Si substrates, and a metal-insulator-semiconductor tunneling structure is formed and its optoelectronic properties are studied. The accumulation dark current and inversion photocurrent of the graphene oxide device are superior to the control device. The introduction of graphene oxide improves the rectifying characteristic of the diode and enhances its responsivity as a photodetector. At 2 V, the photo-to-dark current ratio of the graphene oxide device is 24, larger than the value of 15 measured in the control device. PMID:22734469

  7. Detuned Plasmonic Bragg Grating Sensor Based on a Defect Metal-Insulator-Metal Waveguide

    PubMed Central

    Qu, Shinian; Song, Ci; Xia, Xiushan; Liang, Xiuye; Tang, Baojie; Hu, Zheng-Da; Wang, Jicheng

    2016-01-01

    A nanoscale Bragg grating reflector based on the defect metal-insulator-metal (MIM) waveguide is developed and numerically simulated by using the finite element method (FEM). The MIM-based structure promises a highly tunable broad stop-band in transmission spectra. The narrow transmission window is shown to appear in the previous stop-band by changing the certain geometrical parameters. The central wavelengths can be controlled easily by altering the geographical parameters. The development of surface plasmon polarition (SPP) technology in metallic waveguide structures leads to more possibilities of controlling light at deep sub-wavelengths. Its attractive ability of breaking the diffraction limit contributes to the design of optical sensors. PMID:27240381

  8. Densely-tiled metal-insulator-metal metamaterial resonators with quasi- monochromatic thermal emission.

    PubMed

    Ito, Kota; Toshiyoshi, Hiroshi; Iizuka, Hideo

    2016-06-13

    Metal-insulator-metal metamaterial thermal emitters strongly radiate at multiple resonant wavelengths. The fundamental mode, whose wavelength is the longest among resonances, is generally utilized for selective emission. In this paper, we show that parasitic modes at shorter wavelengths are suppressed by newly employed densely-tiled resonators, and that the suppression enables quasi-monochromatic thermal emission. The second-order harmonics, which is excited at half the fundamental wavelength in conventional emitters, shifts toward shorter wavelength. The blue-shift reduces the amplitude of the second-order emission by taking a distance from the Wien wavelength. Other parasitic modes are eliminated by the small spacing between resonators. The densely-tiled resonators are fabricated, and the measured emission spectra agree well with numerical simulations. The methodology presented here for the suppression of parasitic modes adds flexibility to metamaterial thermal emitters. PMID:27410299

  9. Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

    SciTech Connect

    Alimardani, Nasir; Conley, John F.

    2014-08-25

    Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.

  10. Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Yu, Hao; Schaekers, Marc; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron Voon-Yew; De Meyer, Kristin

    2016-04-01

    Applying simulations and experiments, this paper systematically compares contact resistivities (ρc) of metal-insulator-semiconductor (MIS) contacts and metal-semiconductor (MS) contacts with various semiconductor doping concentrations (Nd). Compared with the MS contacts, the MIS contacts with the low Schottky barrier height are more beneficial for ρc on semiconductors with low Nd, but this benefit diminishes gradually when Nd increases. With high Nd, we find that even an "ideal" MIS contact with optimized parameters cannot outperform the MS contact. As a result, the MIS contacts mainly apply to devices that use relatively low doped semiconductors, while we need to focus on the MS contacts to meet the sub-1 × 10-8 Ω cm2 ρc requirement for future Complementary Metal-Oxide-Semiconductor (CMOS) technology.

  11. Metal-insulator crossover behavior at the surface of NiS2

    NASA Astrophysics Data System (ADS)

    Sarma, D. D.; Krishnakumar, S. R.; Weschke, E.; Schüßler-Langeheine, C.; Mazumdar, Chandan; Kilian, L.; Kaindl, G.; Mamiya, K.; Fujimori, S.-I.; Fujimori, A.; Miyadai, T.

    2003-04-01

    We have performed a detailed high-resolution electron spectroscopic investigation of NiS2 and related Se-substituted compounds, NiS2-xSex, which are known to be gapped insulators in the bulk at all temperatures. A large spectral weight at the Fermi energy of the room temperature spectrum, in conjunction with the extreme surface sensitivity of the experimental probe, however, suggests that the surface layer is metallic at about 300 K. Interestingly, the evolution of the spectral function with decreasing temperature is characterized by a continuous depletion of the single-particle spectral weight at the Fermi energy and the development of a gap-like structure below a characteristic temperature, providing evidence for a metal-insulator crossover behavior at the surfaces of NiS2 and of related compounds. These results provide a consistent description of the unusual transport properties observed in these systems.

  12. Investigation of 90° submicrometer radius bends of metal-insulator-silicon-insulator-metal waveguides.

    PubMed

    Kwon, Min-Suk; Shin, Jin-Soo

    2014-02-01

    We theoretically and experimentally investigate 90° submicrometer radius bends (SRB) of metal-insulator-silicon-insulator-metal (MISIM) waveguides that are plasmonic waveguides fabricated with standard CMOS technology. We focus on the bends of MISIM waveguides with a wide (e.g., 160-220 nm) silicon line. This study shows that the bend efficiently turns the direction of the MISIM waveguide by 90° if its radius is about 0.7 μm. Moreover, we discuss the fact that the bend may be superior to a SRB of a silicon photonic waveguide when it is used to implement a ring resonator with a high quality factor and small volume. PMID:24487907

  13. Detuned Plasmonic Bragg Grating Sensor Based on a Defect Metal-Insulator-Metal Waveguide.

    PubMed

    Qu, Shinian; Song, Ci; Xia, Xiushan; Liang, Xiuye; Tang, Baojie; Hu, Zheng-Da; Wang, Jicheng

    2016-01-01

    A nanoscale Bragg grating reflector based on the defect metal-insulator-metal (MIM) waveguide is developed and numerically simulated by using the finite element method (FEM). The MIM-based structure promises a highly tunable broad stop-band in transmission spectra. The narrow transmission window is shown to appear in the previous stop-band by changing the certain geometrical parameters. The central wavelengths can be controlled easily by altering the geographical parameters. The development of surface plasmon polarition (SPP) technology in metallic waveguide structures leads to more possibilities of controlling light at deep sub-wavelengths. Its attractive ability of breaking the diffraction limit contributes to the design of optical sensors. PMID:27240381

  14. Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states

    NASA Astrophysics Data System (ADS)

    Lu, Tingyu; Zhou, Jun; Nakayama, Tsuneyoshi; Yang, Ronggui; Li, Baowen

    2016-02-01

    We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992), 10.1103/PhysRevLett.68.1563] and most recently by Hohensee et al. [Nat. Commun. 6, 6578 (2015), 10.1038/ncomms7578].

  15. Metal-Insulator-Semiconductor (MIS) Structure with AlN Dielectric

    SciTech Connect

    Mahyuddin, A.; Hassan, Z.; Cheong, K. Y.

    2009-06-01

    In this paper, we present the study of the structural and electrical properties of AlN/GaN thin films grown on Si (111) substrates by plasma-assisted molecular beam epitaxy (RF-MBE) with AlN buffer layer. The performance of aluminum nitride (AlN) as insulator and aluminum (Al) contacts is presented. The thickness of GaN film and AlN insulating film as seen from SEM cross section are about 357.3 nm and 63.38 nm respectively. The presence of Ga, Al and N are confirmed by energy dispersive X-ray (EDX) measurement. The X-ray diffraction (XRD) measurement reveals that the samples are all wurtzite hexagonal AlN and GaN structure. The fabricated metal-insulator-semiconductor (MIS) structure was characterized using capacitance-voltage (C-V) measurements.

  16. Electrical Characteristics and Interface Properties of III Nitride-Based Metal-Insulator-Semiconductor Structure

    SciTech Connect

    Mahyuddin, A.; Hassan, Z.; Yusof, Y.; Cheong, K. Y.

    2010-07-07

    In this work, III-Nitride based metal-insulator-semiconductor (MIS) structure has been studied using AlN/GaN heterostructures on Si (111) with AlN buffer layer grown by plasma-assisted molecular beam epitaxy (MBE). The structural and electrical characteristics of the films were studied through high resolution x-ray diffraction (HRXRD), capacitance-voltage (C-V) and current-voltage (I-V) measurements. The value of flat-band voltage was -0.7 V. A total fixed oxide charge density of 2.73x10{sup 11} cm{sup -2} was estimated. Terman's method was used to obtain the density of interface state in the MIS structure. The analysis showed low interface state density values of 3.66x10{sup 11} cm{sup -2} eV{sup -1}.

  17. Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

    SciTech Connect

    Golubev, Dmitri; Kuzmin, Leonid

    2001-06-01

    The operation of the hot-electron bolometer with normal metal-insulator-superconductor (NIS) tunnel junction as a temperature sensor is analyzed theoretically. The responsivity and the noise equivalent power (NEP) of the bolometer are obtained numerically for typical experimental parameters. Relatively simple approximate analytical expressions for these values are derived. The time constant of the device is also found. We demonstrate that the effect of the electron cooling by the NIS junction, which serves as a thermometer, can improve the sensitivity. This effect is also useful in the presence of the finite background power load. We discuss the effect of the correlation of the shot noise and the heat flow noise in the NIS junction. {copyright} 2001 American Institute of Physics.

  18. Flow-induced delayed Freedericksz transition

    NASA Astrophysics Data System (ADS)

    Mottram, N. J.; McKay, G.; Brown, C. V.; Russell, C. T.; Sage, I. C.; Tsakonas, C.

    2016-03-01

    We demonstrate that a compact manometer experiment allows direct observation of a delay to the classical electric-field-induced Freedericksz transition produced by flow in a highly dispersive nematic liquid crystal layer. The Ericksen-Leslie equations are used to show that a flow aligning torque generated in the nematic layer under Poiseuille flow competes with the orthogonal electric-field reorientation torque. This model fully reproduces the experimental results using only self-consistently determined viscosity values, and predicts a more generally applicable expression for the dependence of the delay Ec∝√{ζ /Δ χe } on the shear rate ζ and on the electric susceptibility anisotropy Δ χe .

  19. Exciton and electron transport in metal oxide and metal-insulator nanostructures

    NASA Astrophysics Data System (ADS)

    Hess, Wayne; Joly, Alan; Halliday, Matthew; Shluger, Alexander; Sushko, Peter

    2014-03-01

    Understanding the dynamics of electronic excited states in solids is essential to forming mechanistic models relevant to electron and energy transport in materials. Irradiation of materials by ultraviolet (UV) photons, produces energetic species such as holes and free electrons, that relax to form electron-hole pairs and excitons capable of driving surface and bulk reactions such as atomic desorption. Photostimulated desorption experiments, when combined with ab-initio calculations, can be used to develop models for exciton transport and subsequent excited state dynamics. We use pulsed UV lasers to excite specific surface and bulk states of nano-structured metal oxides and measure velocities of desorbed atoms under controlled conditions. By measuring O-atom kinetic energy distributions, as a function of laser frequency, we demonstrate exciton transport on the surface and in the bulk of metal-oxides. We further interrogate electron and exciton dynamics at the metal-insulator interface of thin CsBr films grown on Cu(100). Photoexcitation at 6.4 eV specifically excites the CsBr surface exciton which leads to desorption of neutral Br-atoms with hyperthermal kinetic energies. In dramatic contrast, we observe thermal energy Br atoms from CsBr grown on Cu. The hyperthermal desorption channel is entirely quenched for UV laser desorption of Br atoms even for thick (>60 nm) CsBr films on Cu. Possible models for electron transport and exciton relaxation will be discussed.

  20. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry.

    PubMed

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  1. Photoelectric energy conversion of plasmon-generated hot carriers in metal-insulator-semiconductor structures.

    PubMed

    García de Arquer, F Pelayo; Mihi, Agustín; Kufer, Dominik; Konstantatos, Gerasimos

    2013-04-23

    Plasmonic excitation in metals has received great attention for light localization and control of light-matter interactions at the nanoscale with a plethora of applications in absorption enhancement, surface-enhanced Raman scattering, or biosensing. Electrically active plasmonic devices, which had remained underexplored, have recently become a growing field of interest. In this report we introduce a metal-insulator-semiconductor heterostructure for plasmo-electric energy conversion, a novel architecture to harvest hot-electrons derived from plasmonic excitations. We demonstrate external quantum efficiency (EQE) of 4% at 460 nm using a Ag nanostructured electrode and EQE of 1.3% at 550 nm employing a Au nanostructured electrode. The insulator interfacial layer has been found to play a crucial role in interface passivation, a requisite in photovoltaic applications to achieving both high open-circuit voltages (0.5 V) and fill-factors (0.5), but its introduction simultaneously modifies hot-electron injection and transport. We investigate the influence passivation has on these processes for different material configurations, and characterize different types of transport depending on the initial plasmon energy band, reporting power conversion efficiencies of 0.03% for nanopatterned silver electrodes. PMID:23495769

  2. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  3. Nitride-Based UV Metal-Insulator-Semiconductor Photodetector with Liquid-Phase-Deposition Oxide

    NASA Astrophysics Data System (ADS)

    Hwang, J. D.; Yang, Gwo Huei; Yang, Yuan Yi; Yao, Pin Cuan

    2005-11-01

    A low-temperature (30-40°C), low-cost and reliable method of liquid phase deposition (LPD) has been employed to grow SiO2 layers on GaN. The LPD process uses a supersaturated acid aqueous solution of hydrofluosilicic (H2SiF6) as a source liquid and an aqueous solution of boric acid (H3BO3) as a deposition rate controller. In this study, the LPD SiO2 was prepared at 40°C with concentrations of H2SiF6 and H3BO3 at 0.2 and 0.01 M, respectively. The minimum interface-trap density, Dit, of a metal-insulator-semiconductor (MIS) capacitor with a structure of Al/20 nm LPD-SiO2/n-GaN was estimated to be 8.4× 1011 cm-2 V-1. Furthermore, a MIS photodetector with a 10-nm-thick LPD-SiO2 layer has been fabricated successfully. The dark current density was as low as 4.41× 10-6 A/cm2 for an applied field of 4 MV/cm. A maximum responsivity of 0.112 A/W was observed for incident ultraviolet light of 366 nm with an intensity of 4.15 mW/cm2. Defect-assisted tunneling was invoked to explain these results.

  4. Effects of Atomic Scale Roughness at Metal/insulator Interfaces on Metal Work Function

    SciTech Connect

    Ling, Sanliang; Watkins, M. B.; Shlyuger, Alexander L.

    2013-09-26

    We evaluate the performance of different van der Waals (vdW) corrected density functional theory (DFT) methods in predicting the structure of perfect interfaces between the LiF(001), MgO(001), NiO(001) films on the Ag(001) surface and the resulting work function shift of Ag(001). The results demonstrate that including the van der Waals interaction is important for obtaining accurate interface structures and the metal work function shift. The work function shift results from a subtle interplay of several effects strongly affected by even small changes in the interface geometry. This makes the accuracy of theoretical methods insufficient for predicting the shift values better than within 0.2 eV. Most of the existing van der Waals corrected functionals are not particularly suited for studying metal/insulator interfaces. The lack of accurate experimental data on the interface geometries and surface rumpling of insulators hampers the calibration of existing and novel density functionals.

  5. An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation.

    PubMed

    Hill, James C; Landers, Alan T; Switzer, Jay A

    2015-11-01

    The photoelectrochemical splitting of water into hydrogen and oxygen requires a semiconductor to absorb light and generate electron-hole pairs, and a catalyst to enhance the kinetics of electron transfer between the semiconductor and solution. A crucial question is how this catalyst affects the band bending in the semiconductor, and, therefore, the photovoltage of the cell. We introduce a simple and inexpensive electrodeposition method to produce an efficient n-Si/SiOx/Co/CoOOH photoanode for the photoelectrochemical oxidation of water to oxygen. The photoanode functions as a solid-state, metal-insulator-semiconductor photovoltaic cell with spatially non-uniform barrier heights in series with a low overpotential water-splitting electrochemical cell. The barrier height is a function of the Co coverage; it increases from 0.74 eV for a thick, continuous film to 0.91 eV for a thin, inhomogeneous film that has not reached coalescence. The larger barrier height leads to a 360 mV photovoltage enhancement relative to a solid-state Schottky barrier. PMID:26366847

  6. An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation

    NASA Astrophysics Data System (ADS)

    Hill, James C.; Landers, Alan T.; Switzer, Jay A.

    2015-11-01

    The photoelectrochemical splitting of water into hydrogen and oxygen requires a semiconductor to absorb light and generate electron-hole pairs, and a catalyst to enhance the kinetics of electron transfer between the semiconductor and solution. A crucial question is how this catalyst affects the band bending in the semiconductor, and, therefore, the photovoltage of the cell. We introduce a simple and inexpensive electrodeposition method to produce an efficient n-Si/SiOx/Co/CoOOH photoanode for the photoelectrochemical oxidation of water to oxygen. The photoanode functions as a solid-state, metal-insulator-semiconductor photovoltaic cell with spatially non-uniform barrier heights in series with a low overpotential water-splitting electrochemical cell. The barrier height is a function of the Co coverage; it increases from 0.74 eV for a thick, continuous film to 0.91 eV for a thin, inhomogeneous film that has not reached coalescence. The larger barrier height leads to a 360 mV photovoltage enhancement relative to a solid-state Schottky barrier.

  7. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico

    2016-01-01

    This paper presents an analysis of the high voltage trapping processes that take place in high-electron mobility transistors based on GaN, with a metal-insulator-semiconductor (MIS) structure. The study is based on combined pulsed and transient measurements, carried out with trapping voltages in the range from 50 to 500 V. The results indicate that: (i) dynamic Ron is maximum for trapping voltages between 200 and 300 V, and decreases for higher voltage levels; (ii) Ron-transient measurements reveal the presence of a dominant trap with activation energy Ea1 = 0.93 eV and of a second trap with activation energy equal to Ea2 = 0.61 eV; (iii) the deep level transient spectroscopy (DLTS) signal associated to trap Ea1 is completely suppressed for high trapping voltages (VDS = 500 V). The results are interpreted by considering that the trap Ea1 is located in the buffer, and originates from CN defects. The exposure to high drain voltages may favor the depletion of such traps, due to a field-assisted de-trapping process or to the presence of vertical leakage paths.

  8. Elastoplasmonic interaction in metal-insulator-metal localized surface plasmon systems

    NASA Astrophysics Data System (ADS)

    Mrabti, Abdelali; Lévêque, Gaëtan; Akjouj, Abdellatif; Pennec, Yan; Djafari-Rouhani, Bahram; Nicolas, Rana; Maurer, Thomas; Adam, Pierre-Michel

    2016-08-01

    We investigate theoretically and numerically the coupling between elastic and localized surface plasmon modes in a system of gold nanocylinders separated from a thin gold film by a dielectric spacer of few nanometers thickness. That system supports plasmon modes confined in between the bottom of the nanocylinder and the top of the gold film, which arise from the formation of interference patterns by short-wavelength metal-insulator-metal propagating plasmon. First, we present the plasmonic properties of the system though computer-simulated extinction spectra and field maps associated to the different optical modes. Next, a simple analytical model is introduced, which allows to correctly reproduce the shape and wavelengths of the plasmon modes. This model is used to investigate the efficiency of the coupling between an elastic deformation and the plasmonic modes. In the last part of the paper, we present the full numerical simulations of the elastic properties of the system, and then compute the acousto-plasmonic coupling between the different plasmon modes and five acoustic modes of very different shape. The efficiency of the coupling is assessed first by evaluating the modulation of the resonance wavelength, which allows comparison with the analytical model, and finally in term of time-modulation of the transmission spectra on the full visible range, computed for realistic values of the deformation of the nanoparticle.

  9. Magnetic modulation of surface plasmon modes in magnetoplasmonic metal-insulator-metal cavities.

    PubMed

    Ferreiro-Vila, E; García-Martín, J M; Cebollada, A; Armelles, G; González, M U

    2013-02-25

    The magnetic modulation of the surface plasmon-polariton (SPP) wavevector is experimentally and theoretically studied for the plasmonic modes excited in metal-insulator-metal (MIM) magnetoplasmonic cavities. For this purpose, Ag/SiO₂/Ag multilayers with different SiO₂ layer thickness in which a thin Co layer is positioned near the top Ag/SiO₂ interface, near the bottom SiO₂/Ag one, or near both of them, are studied. The magnetoplasmonic MIM cavities present symmetric (SM) and antisymmetric (AM) plasmonic modes, of different wavevector and electromagnetic field profiles inside the MIM cavity. We show that the magnetic SPP wavevector modulation strongly depends on which mode is considered, the cavity thickness, and the number and specific location of Co layers within the structure. With only one ferromagnetic layer, a net modulation is obtained, of higher magnitude as we reduce the SiO₂ layer thickness. The introduction of a second Co layer in the structure reduces the modulation due to the non-reciprocal character of SPP modes under an applied magnetic field. Moreover, we demonstrate that the non-reciprocal nature of the SPP modulation can be experimentally visualized in the magnetic hysteresis loops under plasmon excitation conditions by using two Co layers with different magnetization switching fields. PMID:23482025

  10. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    PubMed Central

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  11. Thin-film palladium and silver alloys and layers for metal-insulator-semiconductor sensors

    NASA Astrophysics Data System (ADS)

    Hughes, R. C.; Schubert, W. K.; Zipperian, T. E.; Rodriguez, J. L.; Plut, T. A.

    1987-08-01

    The addition of Ag to Pd in the gate metal of a metal-insulator-semiconductor gas sensing diode can improve the performance and change the selectivity of the sensors for a variety of reactions. Data on the response of diodes with 12 different ratios of Ag to Pd in alloys and layers of Pd and Ag to hydrogen and other gases are reported. Diodes with as much as 32% Ag respond very well to H2 gas and the films are much more durable to high hydrogen exposure than pure Pd films. Improvements in the rate of response and aging behavior are found for certain Ag combinations; others give poorer performance. The presence of Ag on the surface changes the catalytic activity in some cases and examples of H2 mixed with O2 and/or NO2, propylene oxide, ethylene, and formic acid are given. Such selectivity forms the basis for miniature chemical sensor arrays which could analyze complex gas mixtures.

  12. Scaling behavior and surface-plasmon modes in metal-insulator composites

    NASA Astrophysics Data System (ADS)

    Koss, R. S.; Stroud, D.

    1987-06-01

    The ac dielectric response of metal-insulator composites is studied numerically, using the transfer-matrix algorithm of Derrida and Vannimenus. For two-dimensional random composites with site percolation, we verify numerically that the effective dielectric function can be written numerically in the form ɛe/ɛ1=ξ-t/νG+/-((ɛ2/ɛ1)ξ(t+s)/νξ/L, where ɛ1 and ɛ2 are the dielectric functions, ξ is the correlation length, L is the system size (or wavelength of the electric field), G+ and G- are universal functions above and below percolation, and t, s, and ν are standard percolation exponents. A similar form has been previously verified for bond percolation by Bug et al. We also study surface-plasmon resonances in a two-dimensional lattice model of a composite of Drude metal and insulator. The effective conductivity of the composite in this case is found to consist of a Drude peak which disappears below the metal percolation threshold, plus a band of surface-plasmon states separated from zero frequency by a gap which appears to vanish near the percolation threshold. The results in this case agree qualitatively with effective-medium predictions. The potential relation of these results to experiment, and the possibility of a Lifshitz tail in the surface-plasmon density of states, are briefly discussed.

  13. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  14. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

    2014-08-25

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  15. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil

    NASA Astrophysics Data System (ADS)

    Yang, D. G.; Choi, Y. H.; Kim, Y. G.; Song, J. B.; Lee, H. G.

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25Ic), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid.

  16. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil.

    PubMed

    Yang, D G; Choi, Y H; Kim, Y G; Song, J B; Lee, H G

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25I(c)), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid. PMID:27036797

  17. Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

    NASA Astrophysics Data System (ADS)

    Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

    2015-12-01

    Electron doped SrTiO3, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO3 systems show reasonably strong rectification even when SrTiO3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlOx in between the metal and n-SrTiO3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO3) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO3. The non-linear permittivity of n-SrTiO3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

  18. Angular dependence of optical modes in metal-insulator-metal coupled quantum well infrared photodetector

    NASA Astrophysics Data System (ADS)

    Jing, YouLiang; Li, ZhiFeng; Li, Qian; Chen, PingPing; Zhou, XiaoHao; Wang, Han; Li, Ning; Lu, Wei

    2016-04-01

    We report the dependence of the near-field optical modes in metal-insulator-metal quantum well infrared photodetector (MIM-QWIP) on the incident angles. Three optical modes are observed and attributed to the 2nd- and the 3rd-order surface plasmon polariton (SPP) modes and the localized surface polariton (LSP) mode. In addition to the observation of a responsivity enhancement of 14 times by the LSP mode, the varying pattern of the three modes against the incident angle are revealed, in which the LSP mode is fixed while the 2nd SPP mode splits into two branches and the 3rd SPP mode red-shifts. The detailed mechanisms are analyzed and numerically simulated. The results fit the experiments very well, demonstrating the wavevector coupling effect between the incident light and the metal gratings on the SPP modes. Our work will pave the way to fully understanding the influence of incident angles on a detector's response for applying the MIM-QWIP to focal plane arrays.

  19. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Bullock, J.; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-01

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO2/a-Si:H and Al2O3/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n+) contacts, with SiO2 thicknesses of ˜1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρc of ˜3 mΩ cm2 and a recombination current density J0c of ˜40 fA/cm2. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p+) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  20. Numerical study of optical absorption in two-dimensional metal-insulator and normal-superconductor composites

    SciTech Connect

    Zeng, X.C.; Hui, P.M.; Stroud, D.

    1989-01-15

    We analyze a random resistor-inductor-capacitor (RLC) lattice model for the optical properties of a two-dimensional normal-metal--insulator composite, using the Y-..delta.. transformation algorithm developed by Frank and Lobb. Within such a model, the surface plasmon resonances of a Drude-metal--insulator composite are modeled by the ac resonances of a random RLC network. The real part of the effective conductance is found to show a broad surface plasmon resonance peak below and above the metal percolation threshold, and a Drude peak above the threshold. An effective-medium-approximation (EMA) calculation is in excellent agreement with the results of the simulations. We also calculate the far-infrared absorption in a model composite of normal metal and superconductor, using a lattice model. The absorption shows a strong absorption below the superconducting energy gap. An approximate calculation based on the EMA is again in excellent agreement with these results.

  1. High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer

    NASA Astrophysics Data System (ADS)

    Jorel, C.; Vallée, C.; Gonon, P.; Gourvest, E.; Dubarry, C.; Defay, E.

    2009-06-01

    Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance (α). A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high-k materials with opposite α, it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3/ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of -60 ppm/V2 associated with a density of 11.5 fF/μm2. These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors.

  2. Complexity in Transition Metal Oxides

    NASA Astrophysics Data System (ADS)

    Dagotto, Elbio; Alvarez, Gonzalo; Moreo, Adriana

    2004-03-01

    Recent computational results in the context of models for manganites and cuprates will be briefly discussed. It is argued that correlations in quenched disorder -- needed to mimic cooperative Jahn-Teller effects -- are important to have colossal magnetoresistance in 3D. A related recently discussed metal-insulator transition induced by disorder in a one-orbital model with cooperative phonons is intuitively explained [1]. In addition, it is argued that colossal effects should be far more common than currently known, and they may appear in cuprate superconductors as well [2]. [1] J. Burgy et al., cond-mat/0308456; C. Sen, G. Alvarez, and E. Dagotto, preprint. [2] See also Adriana Moreo, invited talk, March APS 04; G. Alvarez, M. Mayr et al., preprint.

  3. Quiescent and flow-induced transitional behavior of hydroxypropylcellulose solutions

    NASA Astrophysics Data System (ADS)

    Grizzuti, Nino; Maffettone, Pier Luca

    2003-03-01

    The flow-induced transition of liquid crystalline polymers (LCPs) is studied by rheological techniques. Aqueous solutions of hydroxypropylcellulose (HPC) in water are adopted as a model LCP system. Nonisothermal oscillatory tests are first used to quantitatively determine the "rheological" phase diagram of the HPC/water system under quiescent conditions. The phase diagram compares well with those obtained by other, more conventional techniques. Superposition of oscillatory and steady shear flow is then used to describe the nonisothermal flow-induced transition. In this case, it is shown that a critical shear stress must be reached to effectively induce the isotropic/mesophase transition. Stress-loop experiments are also used to identify the isothermal flow-induced transition, and to provide information on the transition kinetics.

  4. Improved Stress Reliability of Analog TiHfO Metal-Insulator-Metal Capacitors Using High-Work-Function Electrode

    NASA Astrophysics Data System (ADS)

    Cheng, Chun-Hu; Chiang, Kuo-Cheng; Pan, Han-Chang; Hsiao, Chien-Nan; Chou, Chang-Pin; McAlister, Sean P.; Chin, Albert

    2007-11-01

    We have studied the reliability of high-κ (κ ˜ 49) TixHf1-xO (x ˜ 0.67) metal-insulator-metal (MIM) capacitors after constant voltage stress induction. The use of a high-work-function Ni top electrode improves not only the leakage current, and temperature- and voltage-coefficients of capacitance, but also the long-term capacitance variation after stress induction.

  5. Electric field-induced transport modulation in VO2 FETs with high-k oxide/organic parylene-C hybrid gate dielectric

    NASA Astrophysics Data System (ADS)

    Wei, Tingting; Kanki, Teruo; Fujiwara, Kohei; Chikanari, Masashi; Tanaka, Hidekazu

    2016-02-01

    We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.

  6. Pressure-Induced Mott Transition Followed by a 24-K Superconducting Phase in BaFe2S3

    NASA Astrophysics Data System (ADS)

    Yamauchi, Touru; Hirata, Yasuyuki; Ueda, Yutaka; Ohgushi, Kenya

    2015-12-01

    We performed high-pressure study for a Mott insulator BaFe2S3 , by measuring dc resistivity and ac susceptibility up to 15 GPa. We found that the antiferromagnetic insulating state at the ambient pressure is transformed into a metallic state at the critical pressure, Pc=10 GPa , and the superconductivity with the optimum Tc=24 K emerges above Pc. Furthermore, we found that the metal-insulator transition (Mott transition) boundary terminates at a critical point around 10 GPa and 75 K. The obtained pressure-temperature (P -T ) phase diagram is similar to those of the organic and fullerene compounds; namely, BaFe2S3 is the first inorganic superconductor in the vicinity of bandwidth control type Mott transition.

  7. Random Field Driven Spatial Complexity at the Mott Transition in VO2

    NASA Astrophysics Data System (ADS)

    Carlson, Erica; Liu, Shuo; Phillabaum, Benjamin; Dahmen, Karin; Vidhyadhiraja, Narsimhamurthy; Qazilbash, Mumtaz; Basov, Dimitri

    We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

  8. Electromechanical actuation and current-induced metastable states in suspended single-crystalline VO2 nanoplatelets

    SciTech Connect

    Tselev, Alexander; Budai, John D; Strelcov, Evgheni; Tischler, Jonathan Zachary; Kolmakov, Andrei; Kalinin, Sergei V

    2011-01-01

    Current-induced electromechanical actuation enabled by the metal-insulator transition in VO{sub 2} nanoplatelets is demonstrated. The Joule heating by a sufficient current flowing through suspended nanoplatelets results in formation of heterophase domain patterns and is accompanied by nanoplatelet deformation. The actuation action can be achieved in a wide temperature range below the bulk phase transition temperature (68 C). The observed current-sustained heterophase domain structures should be interpreted as distinct metastable states in free-standing and end-clamped VO{sub 2} samples. We analyze the main prerequisites for the realization of a current-controlled actuator based on the proposed concept.

  9. Discreteness-induced transitions in multibody reaction systems.

    PubMed

    Saito, Yohei; Sughiyama, Yuki; Kaneko, Kunihiko; Kobayashi, Tetsuya J

    2016-08-01

    A decrease in system size can induce qualitatively different behavior compared to the macroscopic behavior of the corresponding large-size system. The mechanisms of this transition, which is known as the small-size transition, can be attributed to either a relative increase in the noise intensity or to the discreteness of the state space due to the small system size. The former mechanism has been intensively investigated using several toy and realistic models. However, the latter has rarely been analyzed and is sometimes confused with the former, because a toy model that extracts the essence of the discreteness-induced transition mechanism is lacking. In this work, we propose a one- and three-body reaction system as a minimal model of the discreteness-induced transition and derive the conditions under which this transition occurs in more complex systems. This work enriches our understanding of the influence of small system size on system behavior. PMID:27627279

  10. Pressure induced phase transitions in ceramic compounds containing tetragonal zirconia

    SciTech Connect

    Sparks, R.G.; Pfeiffer, G.; Paesler, M.A.

    1988-12-01

    Stabilized tetragonal zirconia compounds exhibit a transformation toughening process in which stress applied to the material induces a crystallographic phase transition. The phase transition is accompanied by a volume expansion in the stressed region thereby dissipating stress and increasing the fracture strength of the material. The hydrostatic component of the stress required to induce the phase transition can be investigated by the use of a high pressure technique in combination with Micro-Raman spectroscopy. The intensity of Raman lines characteristic for the crystallographic phases can be used to calculate the amount of material that has undergone the transition as a function of pressure. It was found that pressures on the order of 2-5 kBar were sufficient to produce an almost complete transition from the original tetragonal to the less dense monoclinic phase; while a further increase in pressure caused a gradual reversal of the transition back to the original tetragonal structure.

  11. Metal-insulator-metal diodes towards THz and optical energy harvesting: Development of materials design principles

    NASA Astrophysics Data System (ADS)

    Periasamy, Prakash

    Metal-Insulator-Metal (MIM) structures are attractive candidates for high-frequency rectification applications such as THz imaging and sensors, and infrared/visible energy harvesting (rectenna) devices. This thesis develops materials selection principles to guide the choice of material pairs for MIM stacks with desired rectification performance. In particular, a first-of-its kind MIM materials space map is developed that correlates materials properties to rectification performance for different MIM combinations. The materials space diagram is generated based on systematic experimental studies that explore the role of both the metals and the insulator in the MIM stack in determining MIM device performance by evaluating the current-voltage response of a combinatorial set of MIM materials at low frequencies. A novel modified point-contact geometry is developed to rapidly examine a number of MIM material combinations. Material properties such as work function (phiM) of the metals and electron affinity (chi) of the insulator, as well as the thermodynamic chemical stability of the interface are identified as crucial elements for MIM materials selection. Investigations performed to identify the role of metals revealed that it is sufficient to choose the metals such that their Deltaphi is > ~ 300 meV to achieve desired rectification characteristics (high asymmetry and nonlinearity). Using the Nb/Nb2O5 bilayer as the model system, the asymmetry and the nonlinearity were found to be only weakly dependent on Deltaphi above ˜ 0.4 eV. A hypothesis is developed and tested that guides the insulator selection criteria. The proposed hypothesis states that, "to minimize the turn-on voltage and maximize asymmetry and nonlinearity, the electron affinity of the insulator should be close to one of the metal work function values so as to produce a low barrier height". Although the study validated the hypothesis across the material systems studied, preliminary experiments on two

  12. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  13. Comment on ``Induced transitions and energy of a damped oscillator''

    NASA Astrophysics Data System (ADS)

    Papadopoulos, George J.; Hadjiagapiou, Ioannis A.

    1999-04-01

    In a recent paper Croxson [Phys. Rev. A 49, 588 (1994)] reported dissipation-induced transition probabilities from the ground state to higher states for a quantum harmonic oscillator. A partial approximate result was given for the oscillator to remain in its ground state, while for higher transitions the situation became complicated. Our approach provides an exact simple form closed expression for any order of transition. In addition, we supply the evolution of the work done by the system on its environment.

  14. Metal—Insulator Transition in Bi2Sr2Cu1O6+d (Bi-2201) Thin Films

    NASA Astrophysics Data System (ADS)

    Pop, Aurel V.

    2009-05-01

    We have studied the influence of disorder induced by oxygen on the normal state resistivity of under doped Bi2Sr2Cu1O6+d (Bi-2201) thin films, deposited in situ onto heated SrTiO3 (100) substrates by using DC magnetron sputtering for an off-stoichiometric target. The compositions and structural characterization for the deposited films were carried by (EDX), (XPS) and X-ray diffraction measurements. The effect of partial oxygen pressure in the sputtering gas on the metal-insulator transition are presented.

  15. Noise-induced transitions in optomechanical synchronization

    NASA Astrophysics Data System (ADS)

    Weiss, Talitha; Kronwald, Andreas; Marquardt, Florian

    2016-01-01

    We study how quantum and thermal noise affects synchronization of two optomechanical limit-cycle oscillators. Classically, in the absence of noise, optomechanical systems tend to synchronize either in-phase or anti-phase. Taking into account the fundamental quantum noise, we find a regime where fluctuations drive transitions between these classical synchronization states. We investigate how this ‘mixed’ synchronization regime emerges from the noiseless system by studying the classical-to-quantum crossover and we show how the time scales of the transitions vary with the effective noise strength. In addition, we compare the effects of thermal noise to the effects of quantum noise.

  16. Mass-induced transition in fermion number

    SciTech Connect

    Aragao de Carvalho, C.; Pureza, J. M.

    1989-05-15

    We show that if we increase the mass of fermions in interaction with a topological (kink) scalar background in 1+1 dimensions, the fractional fermion number of the system will eventually vanish. The transition is sharp and corresponds to the disappearance of localized states from the spectrum of a Dirac operator which is exactly solvable. Possible applications to different physical systems are discussed.

  17. Pressure-induced phase transition in CrO2.

    PubMed

    Alptekin, Sebahaddin

    2015-12-01

    The ab initio constant pressure molecular dynamics technique and density functional theory with generalized gradient approximation (GGA) was used to study the pressure-induced phase transition of CrO2. The phase transition of the rutile (P42/mnm) to the orthorhombic CaCl2 (Pnnm) structure at 30 GPa was determined successfully in a constant pressure simulation. This phase transition was analyzed from total energy calculations and, from the enthalpy calculation, occurred at around 17 GPa. Structural properties such as bulk modules, lattice parameters and phase transition were compared with experimental results. The phase transition at 12 ± 3 GPa was in good agreement with experimental results, as was the phase transition from the orthorhombic CaCl2 (Pnnm) to the monoclinic (P21/c) structure also found at 35 GPa. PMID:26541468

  18. Performance evaluation of a metal-insulator-metal surface plasmon resonance optical gas sensor under the effect of Gaussian beams.

    PubMed

    Anous, Noha H; Khalil, Diaa A

    2014-04-10

    In this work, the performance of a nonconventional IR surface plasmon resonance (SPR) gas sensor structure based on the use of a metal-insulator-metal (MIM) structure is studied. This MIM-based sensor structure gives enhanced performance five times better than the conventional MI SPR optical gas sensors. The performance of the SPR gas sensors is studied under the effect of oblique incident Gaussian beams with different spot sizes, and the performance enhancement of the MIM structure is confirmed for different spot sizes. The simulation technique used to generate the results is also verified by comparing them to actual experimental results available in the literature. PMID:24787425

  19. Scaling behavior and surface-plasmon resonances in a model three-dimensional metal-insulator composite

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Stroud, D.

    1993-09-01

    We calculate the ac dielectric function of a model Drude metal-insulator composite, using a three-dimensional (d=3) transfer-matrix algorithm. The real part of the effective conductivity, Rege(ω), reveals (i) a Drude peak that appears only above the percolation threshold pc; and (ii) a broad spectrum of surface-plasmon resonances whose lower edge approaches zero frequency at pc. Sufficiently near pc, the dielectric function is consistent with an expected scaling form previously verified in d=2. The surface-plasmon spectrum resembles effective-medium predictions except for a weak but persistent peak near 0.4ω/ωp.

  20. Transmission characteristics and transmission line model of a metal-insulator-metal waveguide with a stub modified by cuts.

    PubMed

    Shen, Xinru; Wang, Yueke; Yan, Xin; Yuan, Lin; Sang, Tian

    2016-08-10

    We propose a structure of a metal-insulator-metal (MIM) waveguide with a stub modified by cuts. Our simulation results, conducted by the finite element method, show that the wavelengths of transmission dip vary with the position of the cuts and form the zigzag lines. A transmission line model is also presented, and it agrees with simulation results well. It is believed that our findings provide a smart way to design a plasmonic waveguide filter at the communication region based on MIM structures. PMID:27534492

  1. Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Gonon, P.; Vallée, C.

    2007-04-01

    Metal-insulator-metal capacitors using high-k oxides are known to display nonlinear capacitance-voltage (C-V) characteristics. In the present work it is proposed that such nonlinearities arise from an electrode polarization mechanism. By considering a field activated hopping conduction in the bulk (related to oxygen vacancies), a simple analytical expression is derived which relates the capacitance to the applied bias. The model is able to predict voltage coefficients of capacitance and is found to be in good agreement with experimental C-V.

  2. Strain induced fragility transition in metallic glass

    PubMed Central

    Yu, Hai-Bin; Richert, Ranko; Maaß, Robert; Samwer, Konrad

    2015-01-01

    Relaxation dynamics are the central topic in glassy physics. Recently, there is an emerging view that mechanical strain plays a similar role as temperature in altering the relaxation dynamics. Here, we report that mechanical strain in a model metallic glass modulates the relaxation dynamics in unexpected ways. We find that a large strain amplitude makes a fragile liquid become stronger, reduces dynamical heterogeneity at the glass transition and broadens the loss spectra asymmetrically, in addition to speeding up the relaxation dynamics. These findings demonstrate the distinctive roles of strain compared with temperature on the relaxation dynamics and indicate that dynamical heterogeneity inherently relates to the fragility of glass-forming materials. PMID:25981888

  3. Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal-ferroelectric-metal-insulator-semiconductor FET and its dynamic behaviour based on Landau theory

    NASA Astrophysics Data System (ADS)

    Li, Yang; Lian, Yong; Samudra, Ganesh S.

    2015-04-01

    Due to internal voltage amplification induced by the negative capacitance of ferroelectrics, the metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FET has been widely investigated to explore its potential application in low power devices. Based on Landau theory and stability criterion, a simulation program is implemented and MFMIS structure is quantitatively analyzed. The results show that it can be appropriately designed for both integrated circuits and memory devices by tuning capacitances contributed by MOSFET dielectric stack and ferroelectrics. Our simulation results on electrical characteristics of ferroelectric devices agree well with both quasi-static and dynamic experimental observations. The influence of the ferroelectric/dielectric layer thickness and area as well as temperature on hysteretic polarization-electric field characteristic of a ferroelectric are successfully explained. For a C-V loop sweeping over the gate voltage in MFMIS, possible asymmetry in the accessible negative capacitance region is also interpreted. Moreover, experimentally observed reduction in the equivalent capacitance of the ferroelectric-dielectric bilayer at high frequency is confirmed by Landau-Khalatnikov theory based simulation. Our work provides a more complete and explicit analytical treatment to understand the effect of negative capacitance of a ferroelectric on device performance.

  4. Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

    NASA Astrophysics Data System (ADS)

    Hanna, Mina J.; Zhao, Han; Lee, Jack C.

    2012-10-01

    We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

  5. Electro-plasmonic 2 × 2 channel-routing switch arranged on a thin-Si-doped metal/insulator/semiconductor/metal structure.

    PubMed

    Moazzam, Mostafa Keshavarz; Kaatuzian, Hassan

    2016-01-20

    Plasmonics as a new field of chip-scale technology is the interesting substrate of this study to propose and numerically investigate a metal/insulator/semiconductor/metal (MISM)-structure 2×2 plasmonic routing switch. As a planar subwavelength arrangement, the presented design has two npn-doped side-coupled dual waveguides whose duty is to route the propagating surface plasmon polaritons through the device. Relying on the MISM structure, which has a MOS-like thin-film arrangement of typically 45 nm doped silicon covered by a layer of 8 nm thick HfO(2) gate insulator, the routing configuration is electrically addressed based on the carrier-induced plasma dispersion effects as an external electro-plasmonic switching control. Finite-element-method-conducted electromagnetic simulations are employed to evaluate the switch optical response at telecom wavelength of λ=1550  nm, due to which the balanced operation measure of extinction ratios larger than 10 dB and insertion losses of around -1.8  dB are obtained for both channels of CROSS and STRAIGHT. Compared with other photonic and plasmonic switching counterparts, this configuration, besides its potential for CMOS compatibility, can be utilized as a high-speed compact building block to sustain higher-speed, more miniaturized, and less consuming electro-optic routing/switching protocols toward complicated optical integrated circuits and systems. PMID:26835932

  6. High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric

    NASA Astrophysics Data System (ADS)

    Wu, Yung-Hsien; Lin, Chia-Chun; Chen, Lun-Lun; Hu, Yao-Chung; Wu, Jia-Rong; Wu, Min-Lin

    2011-01-01

    A Ge-stabilized tetragonal ZrO2 dielectric with a permittivity (κ) value of 36.5 has been obtained by annealing a ZrO2/Ge/ZrO2 laminate at 500 °C and it is a more reliable approach toward stabilizing a tetragonal ZrO2 film. However, metal-insulator-metal (MIM) capacitors with the sole tetragonal ZrO2 film as an insulator achieve a high capacitance density of 27.8 fF/μm2 at the price of a degraded quadratic voltage coefficient of capacitance (VCC) of 81 129 ppm/V2 and unacceptably high leakage current. By capping an amorphous La-doped ZrO2 layer with a κ value of 26.3 to block grain boundaries-induced leakage paths of the crystalline ZrO2 dielectric, high-performance MIM capacitors in terms of a capacitance density of 19.8 fF/μm2, a VCC of 3135 ppm/V2, leakage current of 6.5×10-8 A/cm2 at -1 V, as well as a satisfactory capacitance change of 1.21% after ten-year operation can be realized.

  7. Interaction-induced Landau-Zener transitions

    NASA Astrophysics Data System (ADS)

    Larson, Jonas

    2014-08-01

    By considering a quantum-critical Lipkin-Meshkov-Glick model we analyze a new type of Landau-Zener transitions where the population transfer is mediated by interaction rather than from a direct diabatic coupling. For this scenario, at a mean-field level the dynamics is greatly influenced by quantum interferences. In particular, regardless of how slow the Landau-Zener sweep is, for certain parameters almost no population transfer occurs, which is in stark contrast to the regular Landau-Zener model. For moderate system sizes, this counterintuitive mean-field behaviour is not duplicated in the quantum case. This can be attributed to quantum fluctuations and to the fact that multi-level Landau-Zener-Stückelberg interferences have a “dephasing” effect on the above-mentioned phenomenon. We also find a discrepancy between the quantum and mean-field models in terms of how the transfer probabilities scale with the sweep velocity.

  8. Anderson transition in ultracold atoms: Signatures and experimental feasibility

    SciTech Connect

    Garcia-Garcia, Antonio M.; Wang Jiao

    2006-12-15

    Kicked rotators with certain nonanalytic potentials avoid dynamical localization and undergo a metal-insulator transition. We show that typical properties of this transition are still present as the nonanalyticity is progressively smoothed out provided that the smoothing is less than a certain limiting value. We have identified a smoothing-dependent time scale such that full dynamical localization is absent and the quantum momentum distribution develops power-law tails with anomalous decay exponents as in the case of a conductor at the metal-insulator transition. We discuss under what conditions these findings may be verified experimentally by using ultracold atom techniques. It is found that ultracold atoms can indeed be utilized for the experimental investigation of the metal-insulator transition.

  9. Stress induced reversible crystal transition in poly(butylene succinate)

    NASA Astrophysics Data System (ADS)

    Liu, Guoming; Zheng, Liuchun; Zhang, Xiuqin; Li, Chuncheng; Wang, Dujin

    2015-03-01

    The plastic deformation mechanism of semi-crystalline polymers is a long-studied topic, which is crucial for establishing structure/property relationships. For polymers with stress induced crystal transition, some open questions still need to be answered, such as on which stage of plastic deformation does the crystal transition take place, and more importantly, what happens on the lamellar structure during crystal transition. In this talk, stress-induced reversible crystal transition in poly(butylene succinate) was systematically investigated by in-situ WAXS and SAXS. A ``lamellar thickening'' phenomenon was observed during stretching, which was shown to mainly originated from the reversible crystal transition. This mechanism was shown to be valid in poly(ethylene succinate). The critical stress for the transition was measured in a series of PBS-based crystalline-amorphous multi-block copolymers. Interestingly, these PBS copolymers exhibited identical critical stress independent of amorphous blocks. The universal critical stress for crystal transition was interpreted through a single-microfibril-stretching mechanism. The work is financially supported by the National Natural Science Foundation of China (Grant No. 51203170).

  10. Mechanically Induced Helix-Coil Transition in Biopolymer Networks

    PubMed Central

    Courty, Sebastien; Gornall, Joanne L.; Terentjev, Eugene M.

    2006-01-01

    The quasi-equilibrium evolution of the helical fraction occurring in a biopolymer network (gelatin gel) under an applied stress has been investigated by observing modulation in its optical activity. Its variation with the imposed chain extension is distinctly nonmonotonic and corresponds to the transition of initially coiled strands to induced left-handed helices. The experimental results are in qualitative agreement with theoretical predictions of helices induced on chain extension. This new effect of mechanically stimulated helix-coil transition has been studied further as a function of the elastic properties of the polymer network: crosslink density and network aging. PMID:16239334

  11. Nature of Pressure-induced Insulating States in Simple Metals

    NASA Astrophysics Data System (ADS)

    Naumov, Ivan; Hemley, Russell

    As experimentally established, all the alkali metals and heavy alkaline earth metals (Ca, Sr and Ba) become progressively less conductive on compression, at least up to some critical limit over a broad pressure range. Of these metals, Li and Na clearly undergo pressure-induced metal-insulator transitions, which may also be called reverse Mott transitions. Here, using group theory arguments and first-principles calculations, we show that such transitions can be understood in terms of band representations introduced by Zak. The valence bands in the insulating states are described by simple and composite band representations constructed from localized Wannier functions centered on points unoccupied by atoms. The character of the Wannier functions is closely related to the degree of s-p(-d) hybridization and reflects multi-center chemical bonding in these insulating states. The conditions under which an insulating state is allowed for structures having an integer number of atoms per primitive unit cell as well as re-entrant (i.e., metal-insulator-metal) transition sequences are detailed, resulting in predictions of semimetallic phases with flat surface states. The general principles developed are tested and applied to the alkali and alkaline earth metals, including elements where high-pressure insulating phases have been identified or reported (e.g., Li, Na, and Ca). This research was supported by EFree, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award DESC0001057.

  12. General observation of the memory effect in metal-insulator-ITO structures due to indium diffusion

    NASA Astrophysics Data System (ADS)

    Wu, Xiaojing; Xu, Huihua; Wang, Yu; Rogach, Andrey L.; Shen, Yingzhong; Zhao, Ni

    2015-07-01

    Resistive random access memory (RRAM) devices based on metal oxides, organic molecules and inorganic nanocrystals (NCs) have been studied extensively in recent years. Different memory switching mechanisms have been proposed and shown to be closely related to the device architectures. In this work, we demonstrate that the use of an ITO/active layer/InGa structure can yield nonvolatile resistive memory behavior in a variety of active materials, including polymers, organic small molecules, and colloidal NCs. Through the electrode material and thickness-dependent study, we show that the ON state of the devices is associated with filamentary conduction induced by indium diffusion from the ITO electrode, occurring mostly within around 40-50 nm from the ITO/active layer interface. A negative differential resistance (NDR) regime is observed during transition from the ON to OFF state, and is explained by the space charge limited current (SCLC) effect due to hole injection at the ITO/active layer interface. Our study reveals the impact of indium diffusion at the ITO/active layer interface, an important factor that should be taken into consideration when designing thin printed RRAM devices.

  13. Gap Filler Induced Transition on the Mars Science Laboratory Heatshield

    NASA Technical Reports Server (NTRS)

    Yoon, Seokkwan; Barnhardt, Michael D.; Tang, Chun Y.; Sozer, Emre; Candler, Graham

    2012-01-01

    Detached Eddy Simulations have been performed to investigate the effects of high-fidelity turbulence modeling on roughness-induced transition to turbulence during Mars entry. Chemically reacting flow solutions will be obtained for a gap filler of Mars Science Laboratory at the peak heating condition.

  14. Glycyrrhetinic acid-induced permeability transition in rat liver mitochondria.

    PubMed

    Salvi, Mauro; Fiore, Cristina; Armanini, Decio; Toninello, Antonio

    2003-12-15

    Glycyrrhetinic acid, a hydrolysis product of one of the main constituents of licorice, the triterpene glycoside of glycyrrhizic acid, when added to rat liver mitochondria at micromolar concentrations induces swelling, loss of membrane potential, pyridine nucleotide oxidation, and release of cytochrome c and apoptosis inducing factor. These changes are Ca(2+) dependent and are prevented by cyclosporin A, bongkrekic acid, and N-ethylmaleimide. All these observations indicate that glycyrrhetinic acid is a potent inducer of mitochondrial permeability transition and can trigger the pro-apoptotic pathway. PMID:14637195

  15. Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal-insulator-metal and similar devices.

    PubMed

    Diesing, Detlef; Hasselbrink, Eckart

    2016-07-01

    Metal heterostructures have been used in recent years to gain insights into the relevance of energy dissipation into electronic degrees of freedom in surface chemistry. Non-adiabaticity in the surface chemistry results in the creation of electron-hole pairs, the number and energetic distribution of which need to be studied in detail. Several types of devices, such as metal-insulator-metal, metal-semiconductor and metal-semiconductor oxide-semiconductor, have been used. These devices operate by spatially separating the electrons from the holes, as an internal barrier allows only - or at least favours - transport from the top to the back electrode for one kind of carrier. An introduction into the matter, a survey of the literature and a critical discussion of the state of research is attempted. PMID:27186600

  16. Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Vallée, C.; Gonon, P.; Jorel, C.; El Kamel, F.

    2010-06-01

    This work highlights the influence of the oxygen affinity of the metal electrodes used in high-k metal-insulator-metal capacitors. Several metallic electrodes are tested in order to investigate the role of the metal work function, and the role of the electrode oxygen-affinity in nonlinear behavior of HfO2 and BaTiO3 capacitors. It is shown that the magnitude of the quadratic coefficient of nonlinearity is better explained by the electrode oxygen-affinity rather than by its work function. It is thought that electrode oxidation increases the number of oxygen vacancies at the electrode/dielectric interface, and so increases the magnitude of nonlinearity.

  17. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  18. Electrical parameters of niobium-based overdamped superconductor-normal metal-insulator-superconductor Josephson junctions for digital applications

    NASA Astrophysics Data System (ADS)

    Febvre, Pascal; Bouis, David; De Leo, Natascia; Fretto, Matteo; Sosso, Andrea; Lacquaniti, Vincenzo

    2010-05-01

    We have demonstrated superconductor-normal metal-insulator-superconductor Nb/Al-AlOX/Nb Josephson junctions developed with Al layer thicknesses between 30 and 100 nm, resulting in nonhysteretic current-voltage characteristics for critical current densities between 20 and 60 kA/cm2. Specific capacitances ranged from 180 to 480 fF/μm2, depending on temperature and of barrier deposition conditions. It is shown that the high capacitance seen by the junction depends on the Josephson junction barrier but only to a least extent on the parasitic environment. Although the specific capacitance is unusually high, Stewart-McCumber parameters from 1 to 3, at 4.2 K, optimum for digital single-flux-quantum applications were obtained without external shunting.

  19. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

    SciTech Connect

    Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M.

    2014-11-03

    Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

  20. An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

    NASA Astrophysics Data System (ADS)

    Cortese, Simone; Khiat, Ali; Carta, Daniela; Light, Mark E.; Prodromakis, Themistoklis

    2016-01-01

    Resistive random access memory (ReRAM) crossbar arrays have become one of the most promising candidates for next-generation non volatile memories. To become a mature technology, the sneak path current issue must be solved without compromising all the advantages that crossbars offer in terms of electrical performances and fabrication complexity. Here, we present a highly integrable access device based on nickel and sub-stoichiometric amorphous titanium dioxide (TiO2-x), in a metal insulator metal crossbar structure. The high voltage margin of 3 V, amongst the highest reported for monolayer selector devices, and the good current density of 104 A/cm2 make it suitable to sustain ReRAM read and write operations, effectively tackling sneak currents in crossbars without compromising fabrication complexity in a 1 Selector 1 Resistor (1S1R) architecture. Furthermore, the voltage margin is found to be tunable by an annealing step without affecting the device's characteristics.

  1. Pressure induced structural phase transition in IB transition metal nitrides compounds

    NASA Astrophysics Data System (ADS)

    Soni, Shubhangi; Kaurav, Netram; Jain, A.; Shah, S.; Choudhary, K. K.

    2015-06-01

    Transition metal mononitrides are known as refractory compounds, and they have, relatively, high hardness, brittleness, melting point, and superconducting transition temperature, and they also have interesting optical, electronic, catalytic, and magnetic properties. Evolution of structural properties would be an important step towards realizing the potential technological scenario of this material of class. In the present study, an effective interionic interaction potential (EIOP) is developed to investigate the pressure induced phase transitions in IB transition metal nitrides TMN [TM = Cu, Ag, and Au] compounds. The long range Coulomb, van der Waals (vdW) interaction and the short-range repulsive interaction upto second-neighbor ions within the Hafemeister and Flygare approach with modified ionic charge are properly incorporated in the EIOP. The vdW coefficients are computed following the Slater-Kirkwood variational method, as both the ions are polarizable. The estimated value of the phase transition pressure (Pt) and the magnitude of the discontinuity in volume at the transition pressure are consistent as compared to the reported data.

  2. Pressure induced structural phase transition in IB transition metal nitrides compounds

    SciTech Connect

    Soni, Shubhangi; Kaurav, Netram Jain, A.; Shah, S.; Choudhary, K. K.

    2015-06-24

    Transition metal mononitrides are known as refractory compounds, and they have, relatively, high hardness, brittleness, melting point, and superconducting transition temperature, and they also have interesting optical, electronic, catalytic, and magnetic properties. Evolution of structural properties would be an important step towards realizing the potential technological scenario of this material of class. In the present study, an effective interionic interaction potential (EIOP) is developed to investigate the pressure induced phase transitions in IB transition metal nitrides TMN [TM = Cu, Ag, and Au] compounds. The long range Coulomb, van der Waals (vdW) interaction and the short-range repulsive interaction upto second-neighbor ions within the Hafemeister and Flygare approach with modified ionic charge are properly incorporated in the EIOP. The vdW coefficients are computed following the Slater-Kirkwood variational method, as both the ions are polarizable. The estimated value of the phase transition pressure (Pt) and the magnitude of the discontinuity in volume at the transition pressure are consistent as compared to the reported data.

  3. Giant modification of atomic transition probabilities induced by a magnetic field: forbidden transitions become predominant

    NASA Astrophysics Data System (ADS)

    Sargsyan, Armen; Tonoyan, Ara; Hakhumyan, Grant; Papoyan, Aram; Mariotti, Emilio; Sarkisyan, David

    2014-05-01

    The magnetic field-induced giant modification of probabilities for seven components of 6S1/2, Fg = 3 → 6P3/2, Fe = 5 transition of the Cs D2 line, forbidden by selection rules, is observed experimentally for the first time. For the case of excitation with circularly polarized laser radiation, the probability of a Fg = 3, mF = -3 → Fe = 5, mF = -2 transition becomes the largest of 25 transitions of the Fg = 3 → Fe = 2,3,4,5 group in a wide-range magnetic field of 200-3200 G. Moreover, the modification is the largest among D2 lines of alkali metals. A half-wave-thick cell (the length along the beam propagation axis L = 426 nm) filled with Cs has been used in order to achieve sub-Doppler resolution, which allows the large number of atomic transitions that appear in the absorption spectrum to be separated when an external magnetic field is applied. For B > 3000 G the group of seven transitions Fg = 3 → Fe = 5 is completely resolved and is located at the high frequency level of Fg= 3 → Fe = 2,3,4 transitions. The applied theoretical model describes very well the experimental curves.

  4. Hydration-Induced Phase Transitions in Surfactant and Lipid Films.

    PubMed

    Björklund, Sebastian; Kocherbitov, Vitaly

    2016-05-31

    For several surfactant and lipid systems, it is crucial to understand how hydration influences the physical and chemical properties. When humidity changes, it affects the degree of hydration by adding or removing water molecules. In many cases, this process induces transitions between liquid crystalline phases. This phenomenon is of general interest for numerous applications simply because of the fact that humidity variations are ubiquitous. Of particular interest are hydration-induced phase transitions in amphiphilic films, which in many cases appear as the frontier toward a vapor phase with changing humidity. Considering this, it is important to characterize the film thickness needed for the formation of 3D liquid crystalline phases and the lyotropic phase behavior of this kind of film. In this work, we study this issue by employing a recently developed method based on the humidity scanning quartz crystal microbalance with dissipation monitoring (HS QCM-D), which enables continuous scanning of the film hydration. We investigate five surfactants films (DDAO, DTAC, CTAC, SDS, and n-octylβ-d-glucoside) and one lipid film (monoolein) and show that HS QCM-D enables the fast characterization of hydration-induced phase transitions with small samples. Film thicknesses range from tens to hundreds of nanometers, and clear phase transitions are observed in all cases. It is shown that phase transitions in films occur at the same water activities as for corresponding bulk samples. This allows us to conclude that surfactant and lipid films, with a thickness of as low as 50 nm, are in fact assembled as 3D-structured liquid crystalline phases. Furthermore, liquid crystalline phases of surfactant films show liquidlike behavior, which decreases the accuracy of the absorbed water mass measurement. On the other hand, the monoolein lipid forms more rigid liquid crystalline films, allowing for an accurate determination of the water sorption isotherm, which is also true for the

  5. The role of ultra-thin SiO2 layers in metal-insulator-semiconductor (MIS) photoelectrochemical devices (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Esposito, Daniel V.

    2015-08-01

    Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps "un-pin" the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.

  6. Stress Induces Pain Transition by Potentiation of AMPA Receptor Phosphorylation

    PubMed Central

    Li, Changsheng; Yang, Ya; Liu, Sufang; Fang, Huaqiang; Zhang, Yong; Furmanski, Orion; Skinner, John; Xing, Ying; Johns, Roger A.

    2014-01-01

    Chronic postsurgical pain is a serious issue in clinical practice. After surgery, patients experience ongoing pain or become sensitive to incident, normally nonpainful stimulation. The intensity and duration of postsurgical pain vary. However, it is unclear how the transition from acute to chronic pain occurs. Here we showed that social defeat stress enhanced plantar incision-induced AMPA receptor GluA1 phosphorylation at the Ser831 site in the spinal cord and greatly prolonged plantar incision-induced pain. Interestingly, targeted mutation of the GluA1 phosphorylation site Ser831 significantly inhibited stress-induced prolongation of incisional pain. In addition, stress hormones enhanced GluA1 phosphorylation and AMPA receptor-mediated electrical activity in the spinal cord. Subthreshold stimulation induced spinal long-term potentiation in GluA1 phosphomimetic mutant mice, but not in wild-type mice. Therefore, spinal AMPA receptor phosphorylation contributes to the mechanisms underlying stress-induced pain transition. PMID:25297100

  7. Pressure-induced phase transitions and metallization in VO2

    NASA Astrophysics Data System (ADS)

    Bai, Ligang; Li, Quan; Corr, Serena A.; Meng, Yue; Park, Changyong; Sinogeikin, Stanislav V.; Ko, Changhyun; Wu, Junqiao; Shen, Guoyin

    2015-03-01

    We report the results of pressure-induced phase transitions and metallization in VO2 based on synchrotron x-ray diffraction, electrical resistivity, and Raman spectroscopy. Our isothermal compression experiments at room temperature and 383 K show that the room temperature monoclinic phase (M 1 ,P 21/c ) and the high-temperature rutile phase (R ,P 42/m n m ) of VO2 undergo phase transitions to a distorted M 1 monoclinic phase (M 1' ,P 21/c ) above 13.0 GPa and to an orthorhombic phase (CaCl2-like, P n n m ) above 13.7 GPa, respectively. Upon further compression, both high-pressure phases transform into a new phase (phase X ) above 34.3 and 38.3 GPa at room temperature and 383 K, respectively. The room temperature M 1 -M 1' phase transition structurally resembles the R -CaCl2 phase transition at 383 K, suggesting a second-order displacive type of transition. Contrary to previous studies, our electrical resistivity results, Raman measurements, as well as ab initio calculations indicate that the new phase X , rather than the M 1' phase, is responsible for the metallization under pressure. The metallization mechanism is discussed based on the proposed crystal structure.

  8. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    SciTech Connect

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; Zhou, Shengqiang; Li, Aidong; Wu, Di

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variable range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.

  9. Metal-insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

    NASA Astrophysics Data System (ADS)

    Silwal, Punam; Miao, Ludi; Stern, Ilan; Zhou, Xiaolan; Hu, Jin; Spinu, Leonard; Kim, Dae Ho; Talbayev, Diyar

    2014-03-01

    Spinel NiCo2O4 is attractive for various technological applications but is less studied partly because of the unavailability of NiCo2O4 single crystal or epitaxial thin film. We have grown high-quality crystalline epitaxial NiCo2O4 thin films on MgAl2O4 (001) substrates. The systematic investigation of the films grown at various temperatures reveals a strong correlation between the structural, magnetic, and electrical transport properties. The low-temperature grown films show metallic behavior with strong ferrimagnetic ordering while the high temperature grown films are insulating with suppressed magnetic order. In addition, these films show excellent transport and magnetic properties down to 2 unit-cell thickness. Our study of temperature- and growth-condition dependent optical conductivity provides further insight in the carrier transport of these films. We observed coherent band-like transport in both low- and high temperature grown films, whereas only thermally activated hopping conductivity was reported in previous studies. The confirmation of coherent band like transport provides a basis for further improving NiCo2O4 for the application as transparent conducting oxide.

  10. Metal-Insulator Transition and Superconductivity in the Two-Orbital Hubbard-Holstein Model for Iron-Based Superconductors

    NASA Astrophysics Data System (ADS)

    Yamada, Takemi; Ishizuka, Jun; Ōno, Yoshiaki

    2014-04-01

    We investigate a two-orbital model for iron-based superconductors to elucidate the effect of interplay between electron correlation and Jahn-Teller electron-phonon coupling by using the dynamical mean-field theory combined with the exact diagonalization method. When the intra- and inter-orbital Coulomb interactions, U and U', increase with U = U', both the local spin and orbital susceptibilities, χs and χo, increase with χs = χo in the absence of the Hund’s rule coupling J and the electron-phonon coupling g. In the presence of J and g, there are distinct two regimes: for J ≳ 2g2/ω 0 with the phonon frequency ω0, χs is enhanced relative to χo and shows a divergence at J = Jc above which the system becomes Mott insulator, while for J ≲ 2g2/ω 0, χo is enhanced relative to χs and shows a divergence at g = gc above which the system becomes bipolaronic insulator. In the former regime, the superconductivity is mediated by antiferromagnetic fluctuations enhanced due to Fermi-surface nesting and is found to be largely dependent on carrier doping. On the other hand, in the latter regime, the superconductivity is mediated by ferro-orbital fluctuations and is observed for wide doping region including heavily doped case without the Fermi-surface nesting.

  11. Real-space observation of metal-insulator transition at complex oxide heterointerface with cross-sectional STM

    NASA Astrophysics Data System (ADS)

    Chiu, Ya-Ping; Lin, Jheng-Cyuan; Thanh, Tra-Vu; Lin, Tai-Te; Huang, Po-Cheng; Huang, Bo-Chao; Lin, Jiunn-Yuan; Chu, Ying-Hao

    We report the direct observation of tunable electronic property through visible light at LaAlO3 / SrTiO3 (LAO/STO) complex oxide heterointerface using cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S). Many researches have shown that for the interface to be conducting, the thickness of LAO should be equal to or greater than the critical value 4 unit cells (u.c.). With LAO surface modification by Au clusters, interfacial two-dimensional electron gas presents a giant optical switching effect under visible light illuminated. In this study, through the interaction between photons and electrons system, a direct observation of the evolution of electronic structures from insulating to conducting has been revealed in the LAO (3u.c.)/STO model using the technique of cross-sectional scanning tunneling microscopy and spectroscopy. Results clearly reveal the changes in the built-in electric field in LAO and the band bending in the STO adjacent to the interface after light illumination. National Sun Yat-sen University, Taiwan; Academia Sinica, Taiwan.

  12. Capacitively induced high mobility two-dimensional electron gas in undoped Si /Si1-xGex heterostructures with atomic-layer-deposited dielectric

    NASA Astrophysics Data System (ADS)

    Lu, T. M.; Liu, J.; Kim, J.; Lai, K.; Tsui, D. C.; Xie, Y. H.

    2007-04-01

    The authors demonstrate that a high mobility two-dimensional electron gas can be capacitively induced in an undoped Si /Si1-xGex heterostructure using atomic-layer-deposited Al2O3 as the dielectric. The density is tuned up to 4.2×1011/cm2, limited by the gate leakage current. The mobility increases with the density rapidly and reaches 5.5×104cm2/Vs at the highest density. The observation of well developed quantum Hall states and two-dimensional metal-insulator transition shows that the devices are suitable for two-dimensional electron physics studies.

  13. Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

    2016-04-01

    VO2 is a unique material that undergoes a reversible phase transformation around 68∘C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32∘C. In addition, the VO2 film possesses a typical metal-insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

  14. Multiple mechanisms underlying troglitazone-induced mitochondrial permeability transition

    SciTech Connect

    Okuda, Takuya; Norioka, Misaki; Shitara, Yoshihisa; Horie, Toshiharu

    2010-11-01

    Troglitazone, a thiazolidinedione class antidiabetic drug, was withdrawn from the market because of its severe idiosyncratic hepatotoxicity. It causes a mitochondrial permeability transition (MPT), which may in part contribute to its hepatotoxicity. In the present study, the mechanism of troglitazone mitochondrial toxicity was investigated in isolated rat liver mitochondria. Mitochondrial swelling induced by 10 {mu}M troglitazone was attenuated by bromoenol lactone (BEL), an inhibitor of Ca{sup 2+}-independent phospholipase A{sub 2} (iPLA{sub 2}). In contrast, that induced by 50 {mu}M troglitazone was exacerbated by BEL. This exacerbation was diminished by addition of 2 mM glutathione, an antioxidant. Oxygen consumption by state 3 respiration in isolated mitochondria was also decreased by troglitazone, but it was not affected by BEL. Mitochondrial swelling induced by 10 {mu}M troglitazone was completely attenuated in the absence of Ca{sup 2+} while that induced by 50 {mu}M troglitazone was not affected. Addition of 1 {mu}M cyclosporin A (CsA), an inhibitor of MPT pores, completely attenuated swelling induced by 10 {mu}M troglitazone while it only partly diminished that induced by 50 {mu}M troglitazone. Thus, the MPT induced by 10 and 50 {mu}M troglitazone are regulated by different mechanism; the MPT induced by 10 {mu}M troglitazone is regulated by the activation of iPLA{sub 2} and caused by the opening of CsA-regulating MPT pores followed by accumulation of Ca{sup 2+} in mitochondria, while that induced by 50 {mu}M troglitazone is partly regulated by reactive oxygen species and mainly caused by the opening of CsA-insensitive MPT pores.

  15. Bending-induced phase transition in monolayer black phosphorus

    NASA Astrophysics Data System (ADS)

    Pan, Dou-Xing; Wang, Tzu-Chiang; Guo, Wan-Lin

    2015-08-01

    Bending-induced phase transition in monolayer black phosphorus is investigated through first principles calculations. By wrapping the layer into nanotubes along armchair and zigzag directions with different curvatures, it is found that phase transitions of the tubes occur when radius of curvature is smaller than 5 Å in bending along the zigzag direction, while the tubes remain stable along the armchair direction. Small zigzag tubes with odd numbered monolayer unit cells tend to transfer toward armchair-like phases, but the tubes with even numbered monolayer unit cells transfer into new complex bonding structures. The mechanism for the bending-induced phase transition is revealed by the comprehensive analyses of the bending strain energies, electron density distributions, and band structures. The results show significant anisotropic bending stability of black phosphorus and should be helpful for its mechanical cleavage fabrication in large size. Project supported by the National Natural Science Foundation of China (Grant Nos. 11021262, 11172303, and 11132011) and the National Basic Research Program of China (Grant No.2012CB937500).

  16. Laser-induced topological transitions in phosphorene with inversion symmetry

    NASA Astrophysics Data System (ADS)

    Dutreix, C.; Stepanov, E. A.; Katsnelson, M. I.

    2016-06-01

    Recent ab initio calculations and experiments reported insulating-semimetallic phase transitions in multilayer phosphorene under a perpendicular dc field, pressure, or doping, as a possible route to realize topological phases. In this work, we show that even a monolayer phosphorene may undergo Lifshitz transitions toward semimetallic and topological insulating phases, provided it is rapidly driven by in-plane time-periodic laser fields. Based on a four-orbital tight-binding description, we give an inversion-symmetry-based prescription in order to apprehend the topology of the photon-renormalized band structure, up to the second order in the high-frequency limit. Apart from the initial band insulating behavior, two additional phases are thus identified. A semimetallic phase with massless Dirac electrons may be induced by linear polarized fields, whereas elliptic polarized fields are likely to drive the material into an anomalous quantum Hall phase.

  17. Size Segregation in Granular Media Induced by Phase Transition

    NASA Astrophysics Data System (ADS)

    Tarzia, M.; Fierro, A.; Nicodemi, M.; Ciamarra, M. Pica; Coniglio, A.

    2005-08-01

    In order to study analytically the nature of the size segregation in granular mixtures, we introduce a mean field theory in the framework of a statistical mechanics approach, based on Edwards’ original ideas. For simplicity we apply the theory to a lattice model for a hard sphere binary mixture under gravity, and we find a new purely thermodynamic mechanism that gives rise to the size segregation phenomenon. By varying the number of small grains and the mass ratio, we find a crossover from the Brazil nut to the reverse Brazil nut effect, which becomes a true phase transition when the number of small grains is larger then a critical value. We suggest that this transition is induced by the effective attraction between large grains due to the presence of small ones (depletion force). Finally the theoretical results are confirmed by numerical simulations of the 3d system under taps.

  18. Surface Effects on the Mott-Hubbard Transition in Archetypal V{2}O{3}.

    PubMed

    Lantz, G; Hajlaoui, M; Papalazarou, E; Jacques, V L R; Mazzotti, A; Marsi, M; Lupi, S; Amati, M; Gregoratti, L; Si, L; Zhong, Z; Held, K

    2015-12-01

    We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V{2}O{3}. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and x-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density-functional theory plus dynamical mean-field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic, surface states, which explains our experimental observations. PMID:26684133

  19. Surface Effects on the Mott-Hubbard Transition in Archetypal V2O3

    NASA Astrophysics Data System (ADS)

    Lantz, G.; Hajlaoui, M.; Papalazarou, E.; Jacques, V. L. R.; Mazzotti, A.; Marsi, M.; Lupi, S.; Amati, M.; Gregoratti, L.; Si, L.; Zhong, Z.; Held, K.

    2015-12-01

    We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V2O3. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and x-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density-functional theory plus dynamical mean-field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic, surface states, which explains our experimental observations.

  20. Alignment-Induced Epitaxial Transition in Organic-Organic Heteroepitaxy

    SciTech Connect

    Guo Dong; Sakamoto, Kenji; Miki, Kazushi; Ikeda, Susumu; Saiki, Koichiro

    2008-12-05

    We report the epitaxial growth of thin films of a small organic molecule (pentacene) on polymer substrates with controllable photoalignment over a wide range. The pentacene molecular plane exhibited a distinct orientational change from parallel to perpendicular relative to the polymer chain with increasing substrate polymer alignment. Each orientation consists of twinlike domains. Such characteristics reveal a unique alignment-induced epitaxial transition controlled by the subtle balance of weak interactions, showing a promising approach for tuning the characteristics of organic semiconductor based electronic devices.

  1. Neuronal excitability level transition induced by electrical stimulation

    NASA Astrophysics Data System (ADS)

    Florence, G.; Kurths, J.; Machado, B. S.; Fonoff, E. T.; Cerdeira, H. A.; Teixeira, M. J.; Sameshima, K.

    2014-12-01

    In experimental studies, electrical stimulation (ES) has been applied to induce neuronal activity or to disrupt pathological patterns. Nevertheless, the underlying mechanisms of these activity pattern transitions are not clear. To study these phenomena, we simulated a model of the hippocampal region CA1. The computational simulations using different amplitude levels and duration of ES revealed three states of neuronal excitability: burst-firing mode, depolarization block and spreading depression wave. We used the bifurcation theory to analyse the interference of ES in the cellular excitability and the neuronal dynamics. Understanding this process would help to improve the ES techniques to control some neurological disorders.

  2. Impurity-induced phase transition in quantum paraelectrics

    NASA Astrophysics Data System (ADS)

    Wang, Y. G.; Kleemann, W.; Zhong, W. L.; Zhang, L.

    1998-06-01

    The transverse Ising model is applied to LixK1-xTaO3-like quantum paraelectrics using different kinds of pseudospins representing different perovskite unit cells. Impurity-induced paraelectric-ferroelectric phase transitions are found for appropriate parameters. The substitutional ions act as pinning centers in the system. The dependences of the Curie temperature, spontaneous polarization, and dielectric susceptibility on the concentration of the substitutional ions are calculated. The theoretical results are compared with experimental ones and good agreement is obtained.

  3. Impact-induced glass transition in elastomeric coatings

    NASA Astrophysics Data System (ADS)

    Bogoslovov, R. B.; Roland, C. M.; Gamache, R. M.

    2007-05-01

    Polybutadiene (PB) has a low glass temperature Tg and exhibits rubbery behavior during mechanical perturbation. The corresponding PB-based polyurea (PU) has a higher Tg and fails in a brittle mode for high strain rates. However, unlike in glasses, this brittle failure is accompanied by large energy dissipation. Dielectric relaxation measurements demonstrate that whereas the PB segmental dynamics are faster than the strain rate during impact loading, for PU these motions are on the order of the strain rate, ˜105s-1. Consequently, impact induces a transition to the glassy state, with the accompanying response markedly different from that of a rubber.

  4. Gate induced superconductivity in layered material based electronic double layer field effect transistors

    NASA Astrophysics Data System (ADS)

    Ye, J. T.; Inoue, S.; Kobayashi, K.; Kasahara, Y.; Yuan, H. T.; Shimotani, H.; Iwasa, Y.

    2010-12-01

    Applying the principle of field effect transistor to layered materials provides new opportunities to manipulate their electronic properties for interesting sciences and applications. Novel gate dielectrics like electronic double layer (EDL) formed by ionic liquids are demonstrated to achieve an electrostatic surface charge accumulation on the order of 1014 cm-2. To realize electric field-induced superconductivity, we chose a layered compound: ZrNCl, which is known to be superconducting by introducing electrons through intercalation of alkali metals into the van der Waals gaps. A ZrNCl-based EDL transistor was micro fabricated on a thin ZrNCl single crystal made by mechanical micro-cleavage. Accumulating charges using EDL gate dielectrics onto the channel surface of ZrNCl shows effective field effect modulation of its electronic properties. Sheet resistance of ZrNCl EDL transistor is reduced by applying a gate voltage from 0 to 4.5 V. Temperature dependence of sheet resistance showed clear evidence of metal-insulator transition upon gating, observed at a gate voltage higher than 3.5 V. Furthermore, gate-induced superconductivity took place after metal-insulator transition when the transistor is cooled down to about 15 K.

  5. Roughness Induced Transition in a Supersonic Boundary Layer

    NASA Technical Reports Server (NTRS)

    Balakumar, Ponnampalam; Kergerise, Michael A.

    2013-01-01

    Direct numerical simulation is used to investigate the transition induced by threedimensional isolated roughness elements in a supersonic boundary layer at a free stream Mach number of 3.5. Simulations are performed for two different configurations: one is a square planform roughness and the other is a diamond planform roughness. The mean-flow calculations show that the roughness induces counter rotating streamwise vortices downstream of the roughness. These vortices persist for a long distance downstream and lift the low momentum fluid from the near wall region and place it near the outer part of the boundary layer. This forms highly inflectional boundary layer profiles. These observations agree with recent experimental observations. The receptivity calculations showed that the amplitudes of the mass-flux fluctuations near the neutral point for the diamond shape roughness are the same as the amplitude of the acoustic disturbances. They are three times smaller for the square shape roughness.

  6. Design of a compact and high sensitive refractive index sensor base on metal-insulator-metal plasmonic Bragg grating.

    PubMed

    Binfeng, Yun; Guohua, Hu; Ruohu, Zhang; Yiping, Cui

    2014-11-17

    A nanometric and high sensitive refractive index sensor based on the metal-insulator-metal plasmonic Bragg grating is proposed. The wavelength encoded sensing characteristics of the refractive index sensor were investigated by analyzing its transmission spectrum. The numerical results show that a good linear relationship between the Bragg wavelength and the refractive index of the sensing material can be obtained, which is in accordance with the analytical results very well. A high refractive index sensitivity of 1,488 nm/RIU around Bragg resonance wavelength of 1,550 nm was obtained. Besides, the simulation results show that the sensitivity is depended on the Bragg resonance wavelength and the longer the Bragg resonance wavelength, the higher sensitivity can be obtained. Furthermore, the figure of merit of the refractive index sensor can be greatly increased by introducing a nano-cavity in the proposed plasmonic Bragg grating structure. This work pave the way for high sensitive nanometric refractive index sensor design and application. PMID:25402107

  7. Indium-Tin-Oxide Metal-Insulator-Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide

    NASA Astrophysics Data System (ADS)

    Yang, Gow-Huei; Hwang, Jun-Dar; Lan, Chih-Hsueh; Chan, Chien-Mao; Chen, Hone-Zem; Chang, Shoou-Jinn

    2007-08-01

    A low-cost and reliable SiO2 insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H2SiF6 and H3BO3 solutions. The interface-trap density, Dit, was estimated to be 1.2× 1012 cm-2 eV-1 for the as-grown, not annealed LPD-SiO2 layers. It was found that the leakage current density was 2.06× 10-5 A/cm2 at a negative bias of 10 V for the as-grown Al/20 nm LPD-SiO2/GaN metal-insulator-semiconductor (MIS) capacitors. It was also found that the LPD-SiO2 layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium-tin-oxide (ITO)/LPD-SiO2/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.

  8. Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

    SciTech Connect

    Pandey, Sumeet C. Meade, Roy; Sandhu, Gurtej S.

    2015-02-07

    We present numerical results from atomistic simulations of Cu in SiO{sub 2} and Al{sub 2}O{sub 3}, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 10{sup 20 }cm{sup −3} and 3.41 × 10{sup 22 }cm{sup −3}) in bulk oxides are presented. The metal-insulator interfaces result in up to a ∼4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

  9. A metal-insulator-metal electron emitter based on a porous Al{sub 2}O{sub 3} film

    SciTech Connect

    Xue, Tao; Liang, Zhi-Hu Zhang, Xiao-Ning; Liu, Chun-Liang

    2015-04-20

    A metal-insulator-metal electron emitter containing a sandwiched insulator layer composed of porous aluminum oxide Al{sub 2}O{sub 3} was fabricated. The electron emission characteristics of the electron emitter were investigated under vacuum and xenon. Treatment with H{sub 3}PO{sub 4} and rapid thermal oxidation increased the electric field inside the insulator and improved the quality of porous Al{sub 2}O{sub 3}, resulting in higher efficiency and less fluctuation of electron emission. The maximum current and efficiency of electron emission reached 1.05 mA/cm{sup 2} and 51.2%, respectively, under a pressure of 1.0×10{sup −4} Pa. In addition, electrons were injected into xenon and 147 nm vacuum ultraviolet emission was detected in xenon at a pressure of 5.0 × 10{sup 2 }Pa. This electron emitter has a great potential for use as an ultraviolet radiation source.

  10. Studies of Large-Area Inversion-Layer Metal-Insulator-Semiconductor (IL/MIS) Solar Cells and Arrays

    NASA Technical Reports Server (NTRS)

    Ho, Fat Duen

    1996-01-01

    Many inversion-layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. There are around eighteen 1 cm(exp 2) IL/MIS solar cells which have efficiencies greater than 7%. There are only about three 19 cm(exp 2) IL/MIS cells which have efficiencies greater than 4%. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved. A lot of effort and progress have been made in this area. A comprehensive model for MIS contacts under dark conditions has been developed that covers a wide range of parameters. It has been applied to MIS solar cells. One of the main advantages of these models is the prediction of the range of the thin oxide thickness versus the maximum efficiencies of the MIS solar cells. This is particularly important when the thickness is increased to 25 A. This study is very useful for our investigation of the IL/MIS solar cells. The two-dimensional numerical model for the IL/MIS solar cells has been tried to develop and the results are presented in this report.

  11. Electro-Mechanical Properties of Metal-Insulator-Metal Device Fabricated on Polymer Substrate Using Low-Temperature Process

    NASA Astrophysics Data System (ADS)

    Park, Sung Kyu; Han, Jeong In; Kim, Won Keun; Hong, Sung Jei; Kwak, Min Gi; Lee, Myung Jae; Chung, Kwan Soo

    2002-02-01

    High-performance metal-insulator-metal (MIM) devices on flexible polymer substrates were successfully fabricated without any defects such as cracks, delamination and blistering. This work examines the mechanical and electrical properties of MIM devices constructed using anodic Ta2O5 films. Using newly developed methods including stepped heating process and low-temperature post-annealing below 180°C, we obtained high-performances MIM devices on polymer substrates. Here, we propose the use of stacked bottom electrode and water barrier layer in order to enhance the ductility of the Ta electrode and to prevent blistering problems, respectively. Rutherford backscattering spectroscopy (RBS), auger electron spectroscopy (AES) and transmission electronic microscope (TEM) observations were performed for the structural investigation of the MIM devices on polymer substrates. Electrical measurements were also carried out for as-deposited and thermally treated MIM devices including Al/Ta/Ta2O5/Cr or Ti structures. They exhibit a low leakage current (below 10-7 A/cm2 at 2 MV) and reasonable breakdown voltage (5-7 MV/cm) with a uniformity of 92%. Finally, under low-temperature post-annealing conditions, The Current-Voltage (I-V) behaviors and conduction mechanisms of MIM devices on polymer substrates are discussed based on the results of electrical measurements, structural investigations and conduction band modeling.

  12. Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    El Kamel, F.; Gonon, P.; Vallée, C.; Jorel, C.

    2009-09-01

    The impact of top-electrode metal on the conduction mechanisms of HfO2 thin films-based metal-insulator-metal capacitors was investigated at temperature ranging from 25 to 150 °C. Al, Cr, and Au are considered as top electrodes whereas Pt constitutes the commune bottom electrode. It was found for both capacitors that in the high field region, the leakage mechanism is electrode-limited. The leakage current, measured at the Al/HfO2 and Cr/HfO2 interfaces, was largely governed by Fowler-Nordheim tunneling in the whole measured temperature range. The barrier heights, at the Al/HfO2 and the Cr/HfO2 interfaces, were around 0.77 and 0.95 eV, respectively. In the case of Au/HfO2/Pt capacitors, the Au/HfO2 interface acts as a Schottky barrier with a height of 1.06 eV.

  13. Electrostatic analysis of n-doped SrTiO{sub 3} metal-insulator-semiconductor systems

    SciTech Connect

    Kamerbeek, A. M. Banerjee, T.; Hueting, R. J. E.

    2015-12-14

    Electron doped SrTiO{sub 3}, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO{sub 3} systems show reasonably strong rectification even when SrTiO{sub 3} is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO{sub x} in between the metal and n-SrTiO{sub 3} interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO{sub 3}) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO{sub 3}. The non-linear permittivity of n-SrTiO{sub 3} leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

  14. Design and fabrication of a high-density multilayer metal-insulator-metal capacitor based on selective etching

    SciTech Connect

    Tseng, VFG; Xie, H

    2013-02-06

    This paper presents a novel and cost-effective method for fabricating high-density multilayer metal-insulator-metal (MIM) integrated capacitors. To eliminate the usage of numerous photolithography steps when parallel stacking multiple capacitors layers, a unique process has been developed based on depositing the MIM layers onto a substrate with two protruding pillars, polishing down the pillars to expose the multilayer cross sections and then selectively etching the metal layers on each pillar to form the alternating capacitor plate electrodes. For demonstration purpose, only capacitors with two dielectric layers were fabricated, and the measurement results were verified by a compact analytical model together with finite element simulations. With 200 nm thick silicon nitride/oxide dielectric layers, a capacitance density of 0.6 fF mu m(-2) was achieved, which can be easily increased by scaling down the layer thicknesses and/or stacking more layers. A low equivalent series resistance (ESR) of 300-700 m Omega was measured, and the self-resonance frequency was above measurement limits (> 100 MHz). Further design optimization shows that the ESR can be reduced to below 80 m Omega, while the operation frequency extended to above 2.6 GHz.

  15. Schottky barrier height of Ni/TiO2/4H-SiC metal-insulator-semiconductor diodes

    NASA Astrophysics Data System (ADS)

    Kaufmann, Ivan R.; Pereira, Marcelo B.; Boudinov, Henri I.

    2015-12-01

    Ni/TiO2/4H-SiC diodes were analysed through measurements of current-voltage curves varying the temperature. The Schottky Barrier Height (SBH) which increased with temperature was studied by simulation of the Thermionic Emission Model, considering Ni/SiC Schottky structures with an insulator layer between the metal and semiconductor. This model shows that a new method of calculation should be applied to diodes that have a metal-insulator-semiconductor structure. Misleading results for SBH are obtained if the thin insulator layer is not considered. When applying the suggested method to the Ni/TiO2/4H-SiC diodes it was necessary to consider not only the deposited TiO2 layer, but also a second dielectric layer of native SiCxOy at the surface of SiC. By measuring I-V-T curves for two samples with different thicknesses of TiO2, the suggested method allows one to estimate the thicknesses of both dielectric layers: TiO2 and SiOxCy.

  16. Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

    NASA Technical Reports Server (NTRS)

    Johnson, Gregory A.; Kapoor, Vik J.

    1991-01-01

    Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

  17. Compact all-optical interferometric logic gates based on one-dimensional metal-insulator-metal structures

    NASA Astrophysics Data System (ADS)

    Bian, Yusheng; Gong, Qihuang

    2014-02-01

    The whole set of fundamental all-optical logic gates is realized theoretically using a multi-channel configuration based on one-dimensional (1D) metal-insulator-metal (MIM) structures by leveraging the linear interference between surface plasmon polariton modes. The working principle and conditions for different logic functions are analyzed and demonstrated numerically by means of the finite element method. In contrast to most of the previous studies that require more than one type of configuration to achieve different logic functions, a single geometry with fixed physical dimensions can realize all fundamental functions in our case studies. It is shown that by switching the optical signals to different input channels, the presented device can realize simple logic functions such as OR, AND and XOR. By adding signal in the control channel, more functions including NOT, XNOR, NAND and NOR can be implemented. For these considered logic functions, high intensity contrast ratios between Boolean logic states "1" and "0" can be achieved at the telecom wavelength. The presented all-optical logic device is simple, compact and efficient. Moreover, the proposed scheme can be applied to many other nano-photonic logic devices as well, thereby potentially offering useful guidelines for their designs and further applications in on-chip optical computing and optical interconnection networks.

  18. Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film

    NASA Astrophysics Data System (ADS)

    Wu, Yung-Hsien; Chen, Bo-Yu; Chen, Lun-Lun; Wu, Jia-Rong; Wu, Min-Lin

    2009-09-01

    Thin amorphous and orthorhombic ZrTiO4 film with a high-work-function Ni top electrode has been explored in metal-insulator-metal (MIM) capacitors for analog circuit applications. It has been found that even though the permittivity can be as high as 78.9 for orthorhombic ZrTiO4, the extraordinarily high quadratic voltage coefficient of capacitance (VCC), and leakage current make it ineligible for reliable MIM capacitors. On the other hand, amorphous ZrTiO4 demonstrates a high capacitance density of 29.12 fF/μm2 and a low VCC of 2341 ppm/V2. Because of the amorphous phase and the conduction mechanism of Schottky emission, a low leakage current of 1.3×10-7 A/cm2 at -2 V and a good thermal leakage up to 125 °C has also been obtained. Besides these promising characteristics, amorphous ZrTiO4 holds a great potential for high-performance MIM capacitors not only in its process simplicity but also in the full compatibility with incumbent backend integrated circuit technology.

  19. Electrical properties of the Sm2Ti2O7 thin films for metal-insulator-metal capacitor applications

    NASA Astrophysics Data System (ADS)

    Jeong, Y. H.; Kim, J. C.; Lim, J. B.; Hong, K. P.; Nahm, S.; Sun, H. J.; Ghong, T. H.; Kim, Y. D.; Lee, H. J.

    2007-04-01

    A homogeneous crystalline Sm2Ti2O7 (ST) phase was formed in films grown at temperatures ranging between 100 and 200 °C and subsequently annealed at 900 °C. The ST film had a large dielectric constant of 58, which is similar to that of ST ceramics. The leakage current density of the ST film was low and the Poole-Frenkel emission was suggested as being the leakage current mechanism. The ST film had a negative quadratic voltage coefficient of capacitance (VCC), possibly due to the dipolar relaxation. The 100-nm-thick ST film had a high capacitance density of 5.2 fF/μm2 with a low leakage current density of 1.34 nA/cm2 at 2 V. Its quadratic and linear VCCs were -99.5 ppm/V2 and 11 ppm/V, respectively, with a low temperature coefficient of capacitance of 135 ppm/°C at 100 kHz. These results confirmed the potential for the ST film to be used as a high performance metal-insulator-metal capacitor.

  20. Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

    NASA Astrophysics Data System (ADS)

    Hu, Hang; Zhu, Chunxiang; Lu, Y. F.; Wu, Y. H.; Liew, T.; Li, M. F.; Cho, B. J.; Choi, W. K.; Yakovlev, N.

    2003-07-01

    Thin films of HfO2 high-k dielectric have been prepared by pulsed-laser deposition at various substrate temperatures and pressures. X-ray diffraction, atomic force microscopy, secondary ion mass spectroscopy and ellipsometry were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. It is also found that the optical properties of the HfO2 thin films have strong dependence on both the deposition temperature and pressure. The electrical properties of HfO2 metal-insulator-metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200 °C shows an overall high performance, such as a high capacitance density of ˜3.0 fF/μm2, a low leakage current of 2×10-9 A/cm2 at 3 V, low-voltage coefficients of capacitance, and good-frequency dispersion properties. All of these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

  1. BaTi4O9 thin films for high-performance metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Jang, Bo-Yun; Kim, Beom-Jong; Lee, Suk-Jin; Lee, Kyong-Jae; Nahm, Sahn; Sun, Ho-Jung; Lee, Hwack-Joo

    2005-09-01

    The dielectric and electrical properties of a BaTi4O9 film were investigated in order to evaluate its potential use in metal-insulator-metal (MIM) capacitors for rf/mixed signal integrated circuits. A high capacitance density of 4.62fF/μm2 along with a low tanδ of 0.0025 were obtained at 100 kHz. A high capacitance density of 4.12fF /μm2 and a high quality factor of 322 were also achieved at 2 GHz. The leakage current density was approximately 1nA/cm2 at ±2V. Small linear and quadratic voltage coefficients of capacitance of 110ppm/V and 40.05ppm/V2, respectively, and a small temperature coefficient of capacitance of -92.157ppm/°C at 100 kHz were obtained. These results demonstrate that the BaTi4O9 film is a good candidate material for MIM capacitors.

  2. Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices.

    PubMed

    Chen, Chao; Wang, Ti; Wu, Hao; Zheng, He; Wang, Jianbo; Xu, Yang; Liu, Chang

    2015-01-01

    Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is deposited on the m-plane ZnO thin films. It is interesting to observe the near-infrared random lasing from the metal-insulator-semiconductor devices. PMID:25852396

  3. Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Chen, Chao; Wang, Ti; Wu, Hao; Zheng, He; Wang, Jianbo; Xu, Yang; Liu, Chang

    2015-03-01

    Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is deposited on the m-plane ZnO thin films. It is interesting to observe the near-infrared random lasing from the metal-insulator-semiconductor devices.

  4. Mott transitions in a three-component Falicov-Kimball model: A slave boson mean-field study

    NASA Astrophysics Data System (ADS)

    Le, Duc-Anh; Tran, Minh-Tien

    2015-05-01

    Metal-insulator transitions in a three-component Falicov-Kimball model are investigated within the Kotliar-Ruckenstein slave boson mean-field approach. The model describes a mixture of two interacting fermion atom species loaded into an optical lattice at ultralow temperature. One species is two-component atoms, which can hop in the optical lattice, and the other is single-component atoms, which are localized. Different correlation-driven metal-insulator transitions are observed depending on the atom filling conditions and local interactions. These metal-insulator transitions are classified by the band renormalization factors and the double occupancies of the atom species. The filling conditions and the critical value of the local interactions for these metal-insulator transitions are also analytically established. The obtained results not only are in good agreement with the dynamical mean-field theory for the three-component Falicov-Kimball model but also clarify the nature and properties of the metal-insulator transitions in a simple physics picture.

  5. Impact-Induced Glass Transition in Elastomeric Coatings

    NASA Astrophysics Data System (ADS)

    Roland, C. M.

    2013-03-01

    When an elastomer layer is applied to the front surface of steel, the resistance to penetration by hard projectiles increases significantly. It is not obvious why a soft polymer should affect this property of metals, and most rubbers do not. However, we have found that a few are very effective; the requirement is that the polymer undergo a viscoelastic phase transition upon impact. This means that the frequency of its segmental dynamics correspond to the impact frequency. The latter is estimated as the ratio of the projectile velocity to the coating thickness, and is on the order of 105 s-1 for the experiments herein. Our data and a non-linear dynamics finite-element analysis offer support for this resonance condition as a primary mechanism underlying the penetration-resistance of elastomer-coated metal substrates. The impact-induced phase transition causes large energy absorption, decreasing the kinetic energy of the impacting projectile. However, this energy absorption only accounts for about half the enhanced stopping power of the elastomer/steel bilayer. An additional mechanism is lateral spreading of the impact force, resulting from the transient hardening of the elastomeric during its transition to the glassy state - the modulus of the rubber increases 1000-fold over a time period of microseconds. The penetration-resistance is a very nonlinear function of the coating thickness. Moreover, tests on various metals show that hardness is the principal substrate parameter controlling the contribution of the coating. This work was supported by the Office of Naval Research.

  6. Multiscale Modeling of Shock-Induced Phase Transitions in Iron

    NASA Astrophysics Data System (ADS)

    Carter, Emily; Caspersen, Kyle; Lew, Adrian; Ortiz, Michael

    2004-03-01

    Multiscale Modeling of Shock-Induced Phase Transitions in Iron Emily Carter, Kyle Caspersen, Adrian Lew and Michael Ortiz We investigate the bcc to hcp phase transition in iron under both pressure and shear. We use DFT to map out the energy landscape of uniformly deformed iron, including its equation of state and its elastic moduli as a function of volume. >From these data we construct a nonlinear-elastic energy density which gives the energy density for arbitrary - not necessarily small - deformations. The energy density contains two wells corresponding to the bcc and hcp phases. We take this multi-well energy density as a basis for the investigation of the effect of shear on the phase diagram of iron. We allow for mixed states consisting alternating lamellae of bcc and hcp phases, and, for each macroscopic deformation, we determine the optimal microstructure of the mixed state by energy minimization using a sequential-lamination algorithm. We find that the superposition of shearing deformation on a volume change has the effect of inducing mixed states of varying spatial complexity, and of markedly lowering the critical transformation pressure. Indeed, we find that shear must be taken into consideration in order to obtain agreement with measured transformation pressures. Finally, we demonstrate how the microstructure model can be integrated into large-scale finite element calculations of shocked iron.

  7. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  8. Electrical properties of random metal-insulator composite near the percolation threshold

    SciTech Connect

    Chen, I.G.

    1987-01-01

    The electrical properties of three different systems of metal particles randomly dispersed in an insulator host near the percolation threshold were studied. The effects of the matrix phase as well as the metal-particle shape on the conductivity and dielectric properties of these random composites were investigated and compared as a function of metal-volume fraction and as a function of applied external d.c. field. Particle distribution and cluster shape, as well as the phase nature of the constituents of the composite, have been characterized by using electron microscopy (SEM, TEM, STEM), x-ray spectrum (EDS), and computer-aided image analysis. The results show an insulator-metal transition at a critical volume fraction, i.e. percolation threshold, and at a critical external field. The resistivity, dielectric constant, and dielectric loss tangent generally follow the prediction of percolation theory when metal volume fraction approaches the percolation threshold, i.e. a power-law dependence between electric properties and the distance from the percolation threshold. The critical exponents also agree with the theoretical predictions except in one case where filamentary shaped Ni particles were dispersed in polypropylene. These samples showed a deviation from the universal critical exponents predicted by the classic percolation theory. A reversible switching effect of conductivity with increasing external d.c. potential was also observed.

  9. Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

    PubMed

    Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

    2016-08-23

    Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications. PMID:27464073

  10. Mechanisms of TGFβ-Induced Epithelial-Mesenchymal Transition.

    PubMed

    Moustakas, Aristidis; Heldin, Carl-Henrik

    2016-01-01

    Transitory phenotypic changes such as the epithelial-mesenchymal transition (EMT) help embryonic cells to generate migratory descendants that populate new sites and establish the distinct tissues in the developing embryo. The mesenchymal descendants of diverse epithelia also participate in the wound healing response of adult tissues, and facilitate the progression of cancer. EMT can be induced by several extracellular cues in the microenvironment of a given epithelial tissue. One such cue, transforming growth factor β (TGFβ), prominently induces EMT via a group of specific transcription factors. The potency of TGFβ is partly based on its ability to perform two parallel molecular functions, i.e. to induce the expression of growth factors, cytokines and chemokines, which sequentially and in a complementary manner help to establish and maintain the EMT, and to mediate signaling crosstalk with other developmental signaling pathways, thus promoting changes in cell differentiation. The molecules that are activated by TGFβ signaling or act as cooperating partners of this pathway are impossible to exhaust within a single coherent and contemporary report. Here, we present selected examples to illustrate the key principles of the circuits that control EMT under the influence of TGFβ. PMID:27367735

  11. Mechanisms of TGFβ-Induced Epithelial–Mesenchymal Transition

    PubMed Central

    Moustakas, Aristidis; Heldin, Carl-Henrik

    2016-01-01

    Transitory phenotypic changes such as the epithelial–mesenchymal transition (EMT) help embryonic cells to generate migratory descendants that populate new sites and establish the distinct tissues in the developing embryo. The mesenchymal descendants of diverse epithelia also participate in the wound healing response of adult tissues, and facilitate the progression of cancer. EMT can be induced by several extracellular cues in the microenvironment of a given epithelial tissue. One such cue, transforming growth factor β (TGFβ), prominently induces EMT via a group of specific transcription factors. The potency of TGFβ is partly based on its ability to perform two parallel molecular functions, i.e. to induce the expression of growth factors, cytokines and chemokines, which sequentially and in a complementary manner help to establish and maintain the EMT, and to mediate signaling crosstalk with other developmental signaling pathways, thus promoting changes in cell differentiation. The molecules that are activated by TGFβ signaling or act as cooperating partners of this pathway are impossible to exhaust within a single coherent and contemporary report. Here, we present selected examples to illustrate the key principles of the circuits that control EMT under the influence of TGFβ. PMID:27367735

  12. Random Field Driven Spatial Complexity at the Mott Transition in VO2

    NASA Astrophysics Data System (ADS)

    Liu, Shuo; Phillabaum, B.; Carlson, E. W.; Dahmen, K. A.; Vidhyadhiraja, N. S.; Qazilbash, M. M.; Basov, D. N.

    2016-01-01

    We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

  13. Random Field Driven Spatial Complexity at the Mott Transition in VO(2).

    PubMed

    Liu, Shuo; Phillabaum, B; Carlson, E W; Dahmen, K A; Vidhyadhiraja, N S; Qazilbash, M M; Basov, D N

    2016-01-22

    We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system. PMID:26849604

  14. A transition in brain state during propofol-induced unconsciousness.

    PubMed

    Mukamel, Eran A; Pirondini, Elvira; Babadi, Behtash; Wong, Kin Foon Kevin; Pierce, Eric T; Harrell, P Grace; Walsh, John L; Salazar-Gomez, Andres F; Cash, Sydney S; Eskandar, Emad N; Weiner, Veronica S; Brown, Emery N; Purdon, Patrick L

    2014-01-15

    Rhythmic oscillations shape cortical dynamics during active behavior, sleep, and general anesthesia. Cross-frequency phase-amplitude coupling is a prominent feature of cortical oscillations, but its role in organizing conscious and unconscious brain states is poorly understood. Using high-density EEG and intracranial electrocorticography during gradual induction of propofol general anesthesia in humans, we discovered a rapid drug-induced transition between distinct states with opposite phase-amplitude coupling and different cortical source distributions. One state occurs during unconsciousness and may be similar to sleep slow oscillations. A second state occurs at the loss or recovery of consciousness and resembles an enhanced slow cortical potential. These results provide objective electrophysiological landmarks of distinct unconscious brain states, and could be used to help improve EEG-based monitoring for general anesthesia. PMID:24431442

  15. Shock induced phase transition of water: Molecular dynamics investigation

    NASA Astrophysics Data System (ADS)

    Neogi, Anupam; Mitra, Nilanjan

    2016-02-01

    Molecular dynamics simulations were carried out using numerous force potentials to investigate the shock induced phenomenon of pure bulk liquid water. Partial phase transition was observed at single shock velocity of 4.0 km/s without requirement of any external nucleators. Change in thermodynamic variables along with radial distribution function plots and spectral analysis revealed for the first time in the literature, within the context of molecular dynamic simulations, the thermodynamic pathway leading to formation of ice VII from liquid water on shock loading. The study also revealed information for the first time in the literature about the statistical time-frame after passage of shock in which ice VII formation can be observed and variations in degree of crystallinity of the sample over the entire simulation time of 100 ns.

  16. TGF-β induced epithelial-mesenchymal transition modeling

    NASA Astrophysics Data System (ADS)

    Xenitidis, P.; Seimenis, I.; Kakolyris, S.; Adamopoulos, A.

    2015-09-01

    Epithelial cells may undergo a process called epithelial to mesenchymal transition (EMT). During EMT, cells lose their epithelial characteristics and acquire a migratory ability. Transforming growth factor-beta (TGF-β) signaling is considered to play an important role in EMT by regulating a set of genes through a gene regulatory network (GRN). This work aims at TGF-β induced EMT GRN modeling using publicly available experimental data (gene expression microarray data). The time-series network identification (TSNI) algorithm was used for inferring the EMT GRN. Receiver operating characteristic (ROC) and precision-recall (P-R) curves were constructed and the areas under them were used for evaluating the algorithm performance regarding network inference.

  17. Properties of a ``phase transition'' induced by antiangiogenetic therapeutical protocols

    NASA Astrophysics Data System (ADS)

    Scalerandi, M.; Peggion, F.

    2002-09-01

    Inhibiting angiogenesis has been found to be an interesting therapeutical strategy against cancer. In fact, the success of tumor growth is subordinated to the corresponding increase of the vascular system feeding the neoplasm. However, optimization and design of proper antiangiogenetic therapeutical strategies is still an open problem. We apply a recently developed angiogenesis model to study how variations in the relevant parameters, e.g., induced by chemicals, may cause a ``phase transition'' to a region in the parameter space in which angiogenesis is not succesful. To demonstrate the reliability of our approach and its usefulness, we will study some specific drugs and use our model to investigate the influence of the main variables involved in a clinical treatment: the administration time, the duration of the drug effect, and the drug dose.

  18. A Pt-Ti-O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

    NASA Astrophysics Data System (ADS)

    Usagawa, Toshiyuki; Kikuchi, Yota

    2010-10-01

    A hydrogen gas sensor based on platinum-titanium-oxygen (Pt-Ti-O) gate silicon-metal-insulator-semiconductor field-effect transistors (Si-MISFETs) was developed. The sensor has a unique gate structure composed of titanium and oxygen accumulated around platinum grains on top of a novel mixed layer of nanocrystalline TiOx and superheavily oxygen-doped amorphous titanium formed on SiO2/Si substrates. The FET hydrogen sensor shows high reliability and high sensing amplitude (Δ Vg) defined by the magnitude of the threshold voltage shift. Δ Vg is well fitted by a linear function of the logarithm of air-diluted hydrogen concentration C (ppm), i.e., Δ Vg(V) =0.355 log C(ppm ) -0.610 , between 100 ppm and 1%. This high gradient coefficient of Δ Vg for the wide sensing range demonstrates that the sensor is suitable for most hydrogen-safety-monitoring sensor systems. The Pt-Ti-O structures of the sensor are typically realized by annealing Pt (15 nm)/Ti (5 nm)-gate Si-metal-oxide-semiconductor structures in air at 400 °C for 2 h. The Pt-Ti-O gate MIS structures were analyzed by transmission electron microscope (TEM), x-ray diffraction, Auger electron spectroscopy, and TEM energy dispersive x-ray spectroscopy. From the viewpoint of practical sensing applications, hydrogen postannealing of the Pt-Ti-O gate Si-MISFETs is necessary to reduce the residual sensing amplitudes with long tailing profiles.

  19. The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Miao, Bing; Mahapatra, Rajat; Wright, Nick; Horsfall, Alton

    2008-09-01

    The effect of carbon contamination on the electrical properties of metal-insulator-metal (MIM) capacitor using HfO2 dielectric has been reported. The HfO2 film with lower carbon contamination shows an overall high performance, such as a higher capacitance density of 5.21 fF/μm2, a lower leakage current of 1.3×10-7 A/cm2 at 1 V, lower-voltage coefficients of capacitance, and better frequency and temperature dispersion properties compared with the capacitor of theHfO2 film with higher carbon contamination. The calculated ac barrier heights by electrode polarization model from capacitance-voltage (C-V) characteristics are 0.58 eV for the HfO2 film with high carbon contamination and 0.95 eV for the HfO2 film with negligible carbon contamination. The dc barrier heights extracted from current-voltage (I-V) characteristics are 0.26 eV for the HfO2 film with high carbon contamination and 1.1 eV for the HfO2 film with negligible carbon contamination. All of these experimental results exhibit that the increase in defect density in HfO2 films generated from carbon impurities results in the degradation of barrier heights and poor performance of the MIM capacitor. It is important to point out that, during the fabrication process of the MIM capacitor, the carbon contamination must be minimized.

  20. Solid-solid transitions induced by repulsive interactions revisited.

    PubMed

    Navascués, G; Velasco, E; Mederos, L

    2016-10-19

    We revisit a problem already studied 15 years ago by us in collaboration with Stell and Hemmer: the isostructural solid-solid transitions induced by repulsive particle interactions exhibited by classical systems interacting via the Stell-Hemmer potentials. The full phase diagram in the crystal region is obtained by applying a perturbation theory for classical solids used during our collaboration with Stell. Also, the performance of such a theory is now tested by comparing the perturbative phase diagram with that obtained from computer simulations. The latter was calculated using a recently refined method to obtain the free-energy of crystals by means of Monte Carlo simulations. The perturbation theory captures the correct topology and correctly identifies the stable, fcc and bcc, phases. In addition, the theory predicts the occurrence of special points: a point where the two stable structures coexist at the same density, and two critical points terminating the corresponding isostructural phase transitions for fcc and bcc phases. The location of some of these features in the phase diagram is predicted almost quantitatively. However, phase boundaries involving the non-compact bcc phase are much less accurate, a problem that can be traced to the poor representation used for the bcc phase of the reference, hard-sphere, system. PMID:27546295

  1. Temperature-induced Lifshitz transition in WTe2

    DOE PAGESBeta

    Wu, Yun; Jo, Na Hyun; Ochi, Masayuki; Huang, Lunan; Mou, Daixiang; Bud’ko, Sergey L.; Canfield, P. C.; Trivedi, Nandini; Arita, Ryotaro; Kaminski, Adam

    2015-10-12

    In this study, we use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X–Γ–X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T≃160 K, associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ(T)more » due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T≈175 K and a breakdown of Kohler’s rule in the 70–140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals.« less

  2. Temperature-Induced Lifshitz Transition in WTe2

    NASA Astrophysics Data System (ADS)

    Wu, Yun; Jo, Na Hyun; Ochi, Masayuki; Huang, Lunan; Mou, Daixiang; Bud'ko, Sergey L.; Canfield, P. C.; Trivedi, Nandini; Arita, Ryotaro; Kaminski, Adam

    2015-10-01

    We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X -Γ -X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T ≃160 K , associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ (T ) due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T ≈175 K and a breakdown of Kohler's rule in the 70-140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals.

  3. Temperature-Induced Lifshitz Transition in WTe2.

    PubMed

    Wu, Yun; Jo, Na Hyun; Ochi, Masayuki; Huang, Lunan; Mou, Daixiang; Bud'ko, Sergey L; Canfield, P C; Trivedi, Nandini; Arita, Ryotaro; Kaminski, Adam

    2015-10-16

    We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X-Γ-X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T≃160  K, associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ(T) due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T≈175  K and a breakdown of Kohler's rule in the 70-140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals. PMID:26550889

  4. Temperature-driven and photo-induced MIT behaviors of VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Sohn, Ahrum; Kim, Dong-Wook; Byun, Ji-Won; Baik, Jeong Min

    2014-03-01

    VO2 shows a metal-insulator transition (MIT) and structural phase transition (SPT) at critical temperature (Tc) of 343K. It has been known that the MIT and SPT behaviors of VO2 can be tuned by external stimuli such as light, electric-field, and strain. We carried out comparative studies of MIT behaviors of VO2 nanowires during heating-cooling cycles with and without illumination using several light sources (red, blue, and UV). Light can induce change in Tc and hysteresis width of the resistance change. We have investigated influences of light on SPT during MIT. In this presentation, we will discuss possible physical origins for the photo-induced effects on the MIT behaviors of the VO2 nanowires.

  5. Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal-insulator-semiconductor (MIS) diode at high temperature range

    NASA Astrophysics Data System (ADS)

    Rajagopal Reddy, V.

    2016-05-01

    The electrical and transport mechanisms of a fabricated Au/Ba0.6Sr0.4TiO3 (BST)/GaN metal-insulator-semiconductor (MIS) diode have been studied in the temperature range of 280-430 K by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements. The barrier heights (BHs) of the Au/BST/GaN MIS diode are found to be 0.85 eV ( I- V)/1.35 ( C- V) at 280 K and 1.14 eV ( I- V)/1.17 ( C- V) at 430 K. The series resistance ( R S) values determined by Cheung's functions are in good agreement with each other. The difference between BHs estimated by I- V and C- V methods are also discussed. Results show that the estimated interface state density ( N SS) of MIS diode decreases with an increase in temperature. Observations have indicated that the BH increases whereas ideality factor R S and N SS decreases with increasing temperature. Results have demonstrated that the reverse leakage current is dominated by Poole-Frenkel emission at temperatures of 280-340 K and by Schottky emission at temperatures of 370-430 K. It is also noted that there is a transition of the conduction mechanism in Au/BST/GaN MIS diode from Poole-Frenkel to Schottky emission at temperatures of 340-370 K.

  6. Griffiths singularity of quantum phase transition in ion-gated ZrNCl

    NASA Astrophysics Data System (ADS)

    Saito, Yu; Nojima, Tsutomu; Iwasa, Yoshihiro

    Recent technological advances of thin films fabrication, especially mechanical exfoliation, led to discoveries of less-disordered highly-crystalline two-dimensional (2D) superconductors; atomically thin NbSe2 and ion-gated 2D materials, which show intrinsic properties of 2D superconductors with minimal disorder; for example, metallic ground state, and unconventional 2D Ising superconductivity due to pure spin-valley locking effect. In this talk, we focus on magnetotransport properties of an ionic-liquid gated ZrNCl, which exhibited Griffiths singularity-like behavior in superconductor-metal-insulator transition induced by magnetic fields at low carrier concentrations. The overall behavior is quite similar to the recent results of superconducting Ga thin films, in which quantum Griffiths singularity was observed in vortex-glass state. We will discuss the relationship between Griffiths singularity and quantum tunneling or flux flow of vortices phase (vortex liquid) in our system

  7. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

    SciTech Connect

    Alimardani, Nasir; Tan, Cheng; Lampert, Benjamin P.; Conley, John F.; King, Sean W.; French, Benjamin L.

    2014-07-14

    The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb{sub 2}O{sub 5}, Ta{sub 2}O{sub 5}, ZrO{sub 2}, HfO{sub 2}, Al{sub 2}O{sub 3}, and SiO{sub 2} amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss spectroscopy (REELS) is utilized to measure the band-gap energy (E{sub G}) and energy position of intrinsic sub-gap defect states for each insulator. E{sub G} of as-deposited ALD insulators are found to be Nb{sub 2}O{sub 5} = 3.8 eV, Ta{sub 2}O{sub 5} = 4.4 eV, ZrO{sub 2} = 5.4 eV, HfO{sub 2} = 5.6 eV, Al{sub 2}O{sub 3} = 6.4 eV, and SiO{sub 2} = 8.8 eV with uncertainty of ±0.2 eV. Current vs. voltage asymmetry, non-linearity, turn-on voltage, and dominant conduction mechanisms are compared. Al{sub 2}O{sub 3} and SiO{sub 2} are found to operate based on Fowler-Nordheim tunneling. Al{sub 2}O{sub 3} shows the highest asymmetry. ZrO{sub 2}, Nb{sub 2}O{sub 5}, and Ta{sub 2}O{sub 5} based diodes are found to be dominated by Frenkel-Poole emission at large biases and exhibit lower asymmetry. The electrically estimated trap energy levels for defects that dominate Frenkel-Poole conduction are found to be consistent with the energy levels of surface oxygen vacancy defects observed in REELS measurements. For HfO{sub 2}, conduction is found to be a mix of trap assisted tunneling and Frenkel-Poole emission. Insulator selection criteria in regards to MIM diodes applications are discussed.

  8. Shear-induced discontinuous and continuous topological transitions in a hyperswollen membrane system.

    PubMed

    Tanaka, Hajime; Isobe, Mamoru; Miyazawa, Hideyuki

    2006-02-01

    Here we demonstrate that both discontinuous and continuous transition between the sponge and lamellar phase can be induced by steady shear flow for a hyperswollen membrane system. The discontinuous nature of the transition is revealed by a distinct hysteresis in the rheological behavior between shear-rate increasing and decreasing measurements at a constant temperature. This discontinuity becomes weaker with an increase in the shear rate and temperature, and the transition eventually becomes a continuous one without any hysteresis. We also found another shear-induced transition in a one-phase lamellar region. The dynamic phase diagram in a nonequilibrium steady state under shear is constructed for the sponge-lamellar transition as well as another transition in a stable lamellar phase. Possible physical mechanisms for these shear-induced transitions are discussed. PMID:16605338

  9. Hyperoxia induces alveolar epithelial-to-mesenchymal cell transition

    PubMed Central

    Wang, Wenyi; Kato, Satomi; Colvocoresses-Dodds, Jennifer; Fifadara, Nimita H.; Gauthier, Theresa W.; Helms, My N.; Carlton, David P.; Brown, Lou Ann S.

    2013-01-01

    Myofibroblast accumulation is a pathological feature of lung diseases requiring oxygen therapy. One possible source for myofibroblasts is through the epithelial-to-mesenchymal transition (EMT) of alveolar epithelial cells (AEC). To study the effects of oxygen on alveolar EMT, we used RLE-6TN and ex vivo lung slices and found that hyperoxia (85% O2, H85) decreased epithelial proteins, presurfactant protein B (pre-SpB), pro-SpC, and lamellar protein by 50% and increased myofibroblast proteins, α-smooth muscle actin (α-SMA), and vimentin by over 200% (P < 0.05). In AEC freshly isolated from H85-treated rats, mRNA for pre-SpB and pro-SpC was diminished by ∼50% and α-SMA was increased by 100% (P < 0.05). Additionally, H85 increased H2O2 content, and H2O2 (25–50 μM) activated endogenous transforming growth factor-β1 (TGF-β1), as evident by H2DCFDA immunofluorescence and ELISA (P < 0.05). Both hyperoxia and H2O2 increased SMAD3 phosphorylation (260% of control, P < 0.05). Treating cultured cells with TGF-β1 inhibitors did not prevent H85-induced H2O2 production but did prevent H85-mediated α-SMA increases and E-cadherin downregulation. Finally, to determine the role of TGF-β1 in hyperoxia-induced EMT in vivo, we evaluated AEC from H85-treated rats and found that vimentin increased ∼10-fold (P < 0.05) and that this effect was prevented by intraperitoneal TGF-β1 inhibitor SB-431542. Additionally, SB-431542 treatment attenuated changes in alveolar histology caused by hyperoxia. Our studies indicate that hyperoxia promotes alveolar EMT through a mechanism that is dependent on activation of TGF-β1 signaling. PMID:24375795

  10. Hyperoxia induces alveolar epithelial-to-mesenchymal cell transition.

    PubMed

    Vyas-Read, Shilpa; Wang, Wenyi; Kato, Satomi; Colvocoresses-Dodds, Jennifer; Fifadara, Nimita H; Gauthier, Theresa W; Helms, My N; Carlton, David P; Brown, Lou Ann S

    2014-02-15

    Myofibroblast accumulation is a pathological feature of lung diseases requiring oxygen therapy. One possible source for myofibroblasts is through the epithelial-to-mesenchymal transition (EMT) of alveolar epithelial cells (AEC). To study the effects of oxygen on alveolar EMT, we used RLE-6TN and ex vivo lung slices and found that hyperoxia (85% O2, H85) decreased epithelial proteins, presurfactant protein B (pre-SpB), pro-SpC, and lamellar protein by 50% and increased myofibroblast proteins, α-smooth muscle actin (α-SMA), and vimentin by over 200% (P < 0.05). In AEC freshly isolated from H85-treated rats, mRNA for pre-SpB and pro-SpC was diminished by ∼50% and α-SMA was increased by 100% (P < 0.05). Additionally, H85 increased H2O2 content, and H2O2 (25-50 μM) activated endogenous transforming growth factor-β1 (TGF-β1), as evident by H2DCFDA immunofluorescence and ELISA (P < 0.05). Both hyperoxia and H2O2 increased SMAD3 phosphorylation (260% of control, P < 0.05). Treating cultured cells with TGF-β1 inhibitors did not prevent H85-induced H2O2 production but did prevent H85-mediated α-SMA increases and E-cadherin downregulation. Finally, to determine the role of TGF-β1 in hyperoxia-induced EMT in vivo, we evaluated AEC from H85-treated rats and found that vimentin increased ∼10-fold (P < 0.05) and that this effect was prevented by intraperitoneal TGF-β1 inhibitor SB-431542. Additionally, SB-431542 treatment attenuated changes in alveolar histology caused by hyperoxia. Our studies indicate that hyperoxia promotes alveolar EMT through a mechanism that is dependent on activation of TGF-β1 signaling. PMID:24375795

  11. Metal-to-insulator transition in Y1-xPrxBa2Cu3O7-δ single crystals with various praseodymium contents

    NASA Astrophysics Data System (ADS)

    Vovk, R. V.; Nazyrov, Z. F.; Goulatis, I. L.; Chroneos, A.

    2013-02-01

    We investigate the influence of praseodymium content on the basis plane conductivity of Y1-хPrхBa2Cu3O7-δ single crystals. An increase of the praseodymium concentration leads to the enhancement of the localization effects and the appearance of a metal-insulator transition in the system, which always precedes the superconducting transition. The increase of the concentration of praseodymium, leads to a significant displacement of the point of the metal-insulator transition in the low temperature region.

  12. Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    El Kamel, F.; Gonon, P.; Vallée, C.

    2007-10-01

    This work reports on voltage nonlinearities in metal-insulator-metal (MIM) capacitors using amorphous barium titanate (a-BaTiO3) thin films. It is experimentally demonstrated that voltage nonlinearity is related to the formation of a double layer at electrodes (electrode polarization mechanism). The magnitude of nonlinearities is shown to be controlled by the nature of the metal contacts (Al, Cu, Au, and Ag), as well as by the presence of oxygen during film deposition. It is thought that oxygen vacancies are the defects responsible for the nonlinear character of high-k oxide-based MIM capacitors.

  13. A Surface Plasmon Polariton Electro-Optic Switch Based on a Metal-Insulator-Metal Structure with a Strip Waveguide and Two Side-Coupled Cavities

    NASA Astrophysics Data System (ADS)

    Zhu, Yun-Jin; Huang, Xu-Guang; Mei, Xian

    2012-06-01

    We propose and numerically simulate a nanoscale electro-optic (EO) switch based on a metal-insulator-metal structure composed of a strip waveguide and two side-coupled cavities filled with an EO material of 4-dimethyl-amino-N-methyl-4-stilbazolium tosylate, using the finite difference time domain method. It is found that the structure can be operated as an EO switch at a wavelength of 945 nm, with a modulation depth of 27 dB, a half-wave voltage of 5.3 V and a switching time of about 50 ps.

  14. Defect-induced semiconductor to metal transition in graphene monoxide.

    PubMed

    Woo, Jungwook; Yun, Kyung-Han; Cho, Sung Beom; Chung, Yong-Chae

    2014-07-14

    This study investigates the influence of point defects on the geometric and electronic structure of graphene monoxide (GMO) via density functional theory calculations. In aspects of defect formation energy, GMOs with oxygen vacancies and bridge interstitial defects are more likely to form when compared to GMOs with defects such as carbon vacancies and hollow interstitial defects. It was also found that the oxygen vacancy or the hollow interstitial defect induces local tensile strain around the defective site and this strain increases the band gap energy of the defective GMO. In addition, the band gaps of GMO with carbon vacancies or bridge interstitial defects decreased mainly due to the dangling bonds, not due to the strain effect. It is noted that the dangling bond derived from the defects forms the defect-level in the band gap of GMO. The semiconductor to metal transition by the band gap change (0-0.7 eV) implies the possibility for band gap engineering of GMO by vacancies and interstitial defects. PMID:24886723

  15. Induce magnetism into silicene by embedding transition-metal atoms

    SciTech Connect

    Sun, Xiaotian; Wang, Lu E-mail: yyli@suda.edu.cn; Lin, Haiping; Hou, Tingjun; Li, Youyong E-mail: yyli@suda.edu.cn

    2015-06-01

    Embedding transition-metal (TM) atoms into nonmagnetic nanomaterials is an efficient way to induce magnetism. Using first-principles calculations, we systematically investigated the structural stability and magnetic properties of TM atoms from Sc to Zn embedded into silicene with single vacancy (SV) and double vacancies (DV). The binding energies for different TM atoms correlate with the TM d-shell electrons. Sc, Ti, and Co show the largest binding energies of as high as 6 eV, while Zn has the lowest binding energy of about 2 eV. The magnetic moment of silicene can be modulated by embedding TM atoms from V to Co, which mainly comes from the 3d orbitals of TM along with partly contributions from the neighboring Si atoms. Fe atom on SV and Mn atom on DV have the largest magnetic moment of more than 3 μB. In addition, we find that doping of N or C atoms on the vacancy site could greatly enhance the magnetism of the systems. Our results provide a promising approach to design silicene-based nanoelectronics and spintronics device.

  16. Temperature-Induced Lifshitz Transition in WTe2

    NASA Astrophysics Data System (ADS)

    Jo, Na Hyun; Wu, Yun; Ochi, Masayuki; Huang, Lunan; Mou, Daixiang; Bud'Ko, Sergey L.; Canfield, P. C.; Trivedi, Nandini; Arita, Ryotaro; Kaminski, Adam

    We use thermoeletric power (TEP), temperature- and field-dependent resistivity, and ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X - Γ - X direction. We find a rare example of a temperature-induced Lifshitz transition at T ~ 160 K. Temperature dependent TEP shows a change of slope at T ~ 175 K and Kohler's rule was breakdown in the 70-140 K range. ARPES temperature scans confirm that the hole pockets completely disappear around 160 K. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ (T) due to the semimetal nature of this material driven by modest changes in temperature. [PRL 115, 166602 (2015)] This work is supported by the US DOE, Basic Energy Sciences under Contract No. DE-AC02-07CH11358; Betty Moore Foundation EPiQS Initiative (Grant No. GBMF4411); and CEM, a NSF MRSEC, under Grant No. DMR-1420451.

  17. Extensional Flow-Induced Dynamic Phase Transitions in Isotactic Polypropylene.

    PubMed

    Ju, Jianzhu; Wang, Zhen; Su, Fengmei; Ji, Youxin; Yang, Haoran; Chang, Jiarui; Ali, Sarmad; Li, Xiangyang; Li, Liangbin

    2016-09-01

    With a combination of fast extension rheometer and in situ synchrotron radiation ultra-fast small- and wide-angle X-ray scattering, flow-induced crystallization (FIC) of isotactic polypropylene (iPP) is studied at temperatures below and above the melting point of α crystals (Tmα). A flow phase diagram of iPP is constructed in strain rate-temperature space, composing of melt, non-crystalline shish, α and α&β coexistence regions, based on which the kinetic and dynamic competitions among these four phases are discussed. Above Tmα , imposing strong flow reverses thermodynamic stabilities of the disordered melt and the ordered phases, leading to the occurrence of FIC of β and α crystals as a dynamic phase transition. Either increasing temperature or stain rate favors the competiveness of the metastable β over the stable α crystals, which is attributed to kinetic rate rather than thermodynamic stability. The violent competitions among four phases near the boundary of crystal-melt may frustrate crystallization and result in the non-crystalline shish winning out. PMID:27376630

  18. On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Bakeroot, B.; You, S.; Wu, T.-L.; Hu, J.; Van Hove, M.; De Jaeger, B.; Geens, K.; Stoffels, S.; Decoutere, S.

    2014-10-01

    It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.

  19. On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

    SciTech Connect

    Bakeroot, B.; You, S.; Van Hove, M.; De Jaeger, B.; Geens, K.; Stoffels, S.; Decoutere, S.; Wu, T.-L.; Hu, J.

    2014-10-07

    It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.

  20. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    PubMed Central

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-01-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films. PMID:27033718