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Sample records for ingaas qds structures

  1. Nuclear magnetic resonance inverse spectra of InGaAs quantum dots: Atomistic level structural information

    NASA Astrophysics Data System (ADS)

    Bulutay, Ceyhun; Chekhovich, E. A.; Tartakovskii, A. I.

    2014-11-01

    A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational study of the recently introduced inverse spectra nuclear magnetic resonance technique to assess its suitability for extracting such structural information. We observe marked spectral differences between the compound InAs and alloy InGaAs QDs. These are linked to the local biaxial and shear strains, and the local bonding configurations. The cation alloying plays a crucial role especially for the arsenic nuclei. The isotopic line profiles also largely differ among nuclear species: While the central transition of the gallium isotopes have a narrow linewidth, those of arsenic and indium are much broader and oppositely skewed with respect to each other. The statistical distributions of electric field gradient (EFG) parameters of the nuclei within the QD are analyzed. The consequences of various EFG axial orientation characteristics are discussed. Finally, the possibility of suppressing the first-order quadrupolar shifts is demonstrated by simply tilting the sample with respect to the static magnetic field.

  2. Preparation and Effect of Lighting on Structures and Properties of GSH Capped ZnSe QDs.

    PubMed

    Ding, Ling; Peng, Zeze; Zhou, Peijiang; Cheng, Gary J; Nian, Qiong; Lin, Dong; Zhou, Jinhui; Liang, Yuhe

    2015-11-01

    L-glutathione (GSH) capped ZnSe quantum dots (QDs) were prepared by microwave-assisted aqueous synthesis. Then, the resulting QDs were illuminated under dark, ultraviolet light and incandescent light, respectively. Thereby effect of lighting on the structures and properties of QDs were studied systematically. It was revealed that particle size and element content of QDs took a sharp change after irradiation, while the crystal structure maintains nearly unaffected. Comparing to the ZnSe QDs under dark condition, counterparts irradiated by UV light possessed outstanding sphericity, size distribution and dispersion. And the content of sulfur (S) in ZnSe QDs irradiated by UV light was much higher relatively. The effect of lighting on vibration peaks of O-H was considerable. However, this effect was observed to be weak on other chemical bonds. The possible explanation ascribes to photo-chemical interactions can occur between S-H and O-H bonds on the surface of GSH ligand. The lighting induced GSH to occur photocatalytic oxidation on the surface of ZnSe QDs, which improved the optical properties of QDs. The effects of lighting rely on irradiation types, the sequence is UV light, incandescent light and dark from high to low. PMID:26377128

  3. Formation of columnar (In,Ga)As quantum dots on GaAs(100)

    SciTech Connect

    He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2004-10-04

    Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced.

  4. Study of InGaAs based MODFET structures using variable angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1991-01-01

    Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures. Strained and unstrained InGaAs channels were made by MBE on InP substrates and by MOCVD on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth calibration results. The MBE made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice matched concentration.

  5. Structural, optical and photovoltaic properties of co-doped CdTe QDs for quantum dots sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Ayyaswamy, Arivarasan; Ganapathy, Sasikala; Alsalme, Ali; Alghamdi, Abdulaziz; Ramasamy, Jayavel

    2015-12-01

    Zinc and sulfur alloyed CdTe quantum dots (QDs) sensitized TiO2 photoelectrodes have been fabricated for quantum dots sensitized solar cells. Alloyed CdTe QDs were prepared in aqueous phase using mercaptosuccinic acid (MSA) as a capping agent. The influence of co-doping on the structural property of CdTe QDs was studied by XRD analysis. The enhanced optical absorption of alloyed CdTe QDs was studied using UV-vis absorption and fluorescence emission spectra. The capping of MSA molecules over CdTe QDs was confirmed by the FTIR and XPS analyses. Thermogravimetric analysis confirms that the prepared QDs were thermally stable up to 600 °C. The photovoltaic performance of alloyed CdTe QDs sensitized TiO2 photoelectrodes were studied using J-V characteristics under the illumination of light with 1 Sun intensity. These results show the highest photo conversion efficiency of η = 1.21%-5% Zn & S alloyed CdTe QDs.

  6. Giant Up-Conversion Efficiency of InGaAs Quantum Dots in a Planar Microcavity

    PubMed Central

    Xu, Qinfeng; Piermarocchi, Carlo; Pershin, Yuriy V.; Salamo, G. J.; Xiao, Min; Wang, Xiaoyong; Shih, Chih-Kang

    2014-01-01

    Self-assembled InGaAs quantum dots (QDs) were fabricated inside a planar microcavity with two vertical cavity modes. This allowed us to excite the QDs coupled to one of the vertical cavity modes through two propagating cavity modes to study their down- and up-converted photoluminescence (PL). The up-converted PL increased continuously with the increasing temperature, reaching an intensity level comparable to that of the down-converted PL at ~120 K. This giant efficiency in the up-converted PL of InGaAs QDs was enhanced by about 2 orders of magnitude with respect to a similar structure without cavity. We tentatively explain the enhanced up-converted signal as a direct consequence of the modified spontaneous emission properties of the QDs in the microcavity, combined with the phonon absorption and emission effects. PMID:24492329

  7. Structural, morphological and optical properties of PEDOT:PSS/QDs nano-composite films prepared by spin-casting

    NASA Astrophysics Data System (ADS)

    Najeeb, Mansoor Ani; Abdullah, Shahino Mah; Aziz, Fakhra; Ahmad, Zubair; Rafique, Saqib; Wageh, S.; Al-Ghamdi, Ahmed A.; Sulaiman, Khaulah; Touati, Farid; Shakoor, R. A.; Al-Thani, N. J.

    2016-09-01

    This paper describes the structural, morphological and optical properties of the nano-composite of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and quantum dots (QDs). The ZnSe and CdSe QDs have been synthesized, with the aid of Mercaptoacetic acid (MAA), by a colloidal method with an average size of ~5 to 7 nm. QDs have been embedded in PEDOT:PSS using a simple solution processing approach and has been deposited as thin films by spin coating technique. The QDs embedded PEDOT:PSS enhances the light absorption spectra of samples, prominently in terms of absorption intensity which may consequently improve sensitivity of the optoelectronic devices.

  8. Structural effects on heat dissipation in InGaAs MHEMTs

    NASA Astrophysics Data System (ADS)

    Noh, Jinhyun; Ryoo, Yeonmi; Jeon, Namcheol; Cha, Ho-Young; Seo, Kwang-Seok

    2013-04-01

    Since the high thermal resistance of InGaAs metamorphic high electron mobility transistors (MHEMTs) limits their applicability, thermal management should be taken into account when designing the device structure. In this study, structural effects on heat dissipation in InGaAs MHEMTs were carefully investigated and experimentally validated. With an air bridge thickness of 10 µm and a gate pitch distance of 24 µm, the maximum channel temperature in a flip-chip bonded device was noticeably reduced from 132 to 106 °C (i.e. corresponding thermal resistance from 252.17 to 178.14 K W-1). Improved heat dissipation with the proposed structure was experimentally validated using backside-mounted devices by an infrared temperature measurement method.

  9. Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal

    SciTech Connect

    Urbanczyk, A.; Hamhuis, G. J.; Noetzel, R.

    2010-07-26

    The authors report the coupling of single InGaAs quantum dots (QDs) to the surface plasmon resonance of a metal nanocrystal. Clear enhancement of the photoluminescence (PL) in the spectral region of the surface plasmon resonance is observed which splits up into distinct emission lines from single QDs in micro-PL. The hybrid metal-semiconductor structure is grown by molecular beam epitaxy on GaAs (100) utilizing the concept of self-organized anisotropic strain engineering for realizing ordered arrays with nanometer-scale precise positioning of the metal nanocrystals with respect to the QDs.

  10. Radiation performance of AlGaAs and InGaAs concentrator cells and expected performance of cascade structures

    NASA Technical Reports Server (NTRS)

    Curtis, H. B.; Swartz, C. K.; Hart, R. E., Jr.

    1987-01-01

    Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1-MeV electrons and 37-MeV protons. These cells are candidates for individual cells in a cascade structure. Data are presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AM0. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series-connected and separately connected structures are investigated.

  11. The influence of growth temperature on structural and optical properties of sputtered ZnO QDs embedded in SiO2 matrix

    NASA Astrophysics Data System (ADS)

    Samavati, Alireza; Othaman, Zulkafli; Ghoshal, S. K.; Mustafa, M. K.

    2015-10-01

    We report the influence of growth temperature on surface morphology, structural and optical properties of ZnO QDs embedded with SiO2/Si matrix fabricated by radio frequency (RF) magnetron sputtering method. The fragmentation due to elastic strain relaxation compensate adatom diffusion length at higher temperature causes the decrement of the ZnO QDs sizes from ∼41 nm to ∼12 nm and number density enhancement from ∼0.2 to ∼15.4 × 1010 cm-2 by increasing the growth temperature. ZnO QDs shows a well-defined hexagonal close packed wurtzite structure with lattice parameters close to those of bulk ZnO, confirming their high crystalline quality. Increasing growth parameters causes to decrease the lattice parameters due to change in interatomic distances explained by elimination of defects and structural relaxation. The room temperature photoluminescence (PL) spectra shows strong UV accompanied by weaker green peak originated from recombination of free excitons and dominative deep-level emissions respectively. As the growth temperature increased to 500 °C, an emission intensity in the ultraviolet and green region enhanced which is due to increment in the numbers of photo-carriers by increasing the number density of QDs. Calculated band gap using an optical transmittance measurement indicates that the bandgap shift to higher energies is not taken placed because of large size of dots. The Urbach energy increases considerably in samples with increasing growth temperature which is attributed to higher degree of surface disorder in smaller QDs. The excellent features of the results suggest that our systematic analysis method may constitute a basis for the tunable growth of ZnO QDs suitable in nanophotonics.

  12. Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

    NASA Astrophysics Data System (ADS)

    David, S.; Roque, J.; Rochat, N.; Bernier, N.; Piot, L.; Alcotte, R.; Cerba, T.; Martin, M.; Moeyaert, J.; Bogumilowizc, Y.; Arnaud, S.; Bertin, F.; Bassani, F.; Baron, T.

    2016-05-01

    Structural and optical properties of InGaAs quantum well fins (QWFs) selectively grown on Si using the aspect ratio trapping (ART) method in 200 nm deep SiO2 trenches are studied. A new method combining cathodoluminescence, transmission electron microscopy, and precession electron diffraction techniques is developed to spatially correlate the presence of defects and/or strain with the light emission properties of a single InGaAs QWF. Luminescence losses and energy shifts observed at the nanoscale along InGaAs QWF are correlated with structural defects. We show that strain distortions measured around threading dislocations delimit both high and low luminescent areas. We also show that trapped dislocations on SiO2 sidewalls can also result in additional distortions. Both behaviors affect optical properties of QWF at the nanoscale. Our study highlights the need to improve the ART growth method to allow integration of new efficient III-V optoelectronic components on Si.

  13. Beyond hydrostatic strain in empirical pseudopotentials for the electronic structure of InGaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Bulutay, Ceyhun; Cakan, Asli

    2015-03-01

    Self-assembled quantum dots (SAQDs) are among the prime candidates for realizing semiconductor qubits. Even though much progress has been achieved toward understanding their electronic structure, more efforts are needed to reach the desired quantitative level for a precise control of the carrier and nuclear spin degrees of freedom. In this respect, the empirical pseudopotential method has been highly successful for structures involving more than hundred thousand atoms. However, due to lack of self-consistency, their use in strained environments, as in SAQDS, requires vital improvement. The main contribution of this work is to develop empirical pseudopotentials valid for inhomogeneous strain environments caused by cation alloying in InGaAs SAQDs. In our presentation, we first validate our approach with the ab initio density functional theory results based on Projector Augmented-Wave technique. This is followed by a comparison of the electronic structure results with and without strain-dependent pseudopotentials for InGaAs SAQDs having an alloy composition of 20-30% indium, which is typically the case in the current samples. Supported by TUBITAK with the Project No. 112T178.

  14. Effect of surface plasmon resonance in TiO2/Au thin films on the fluorescence of self-assembled CdTe QDs structure

    NASA Astrophysics Data System (ADS)

    Moura, I.; Cerqueira, M. F.; Melnikau, D.; Savateeva, D.; Rakovich, Y.; Borges, J.; Vaz, F.; Vasilevskiy, M.

    2015-04-01

    The exceptional properties of localised surface plasmons (LSPs), such as local field enhancement and confinement effects, resonant behavior, make them ideal candidates to control the emission of luminescent nanoparticles. In the present work, we investigated the LSP effect on the steady-state and time-resolved emission properties of quantum dots (QDs) by organizing the dots into self-assembled dendrite structures deposited on plasmonic nanostructures. Self-assembled structures consisting of water-soluble CdTe mono-size QDs, were developed on the surface of co-sputtered TiO2 thin films doped with Au nanoparticles (NPs) annealed at different temperatures. Their steady-state fluorescence properties were probed by scanning the spatially resolved emission spectra and the energy transfer processes were investigated by the fluorescence lifetime imaging (FLIM) microscopy. Our results indicate that a resonant coupling between excitons confined in QDs and LSPs in Au NPs located beneath the self-assembled structure indeed takes place and results in (i) a shift of the ground state luminescence towards higher energies and onset of emission from excited states in QDs, and (ii) a decrease of the ground state exciton lifetime (fluorescence quenching).

  15. Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature

    SciTech Connect

    Shah, S.; Ghosh, K.; Jejurikar, S.; Mishra, A.; Chakrabarti, S.

    2013-08-01

    Graphical abstract: - Highlights: • Investigation of ground state energy in single and multi-layered InAs/GaAs QD. • Strain reducing layer (InGaAs) prevents the formation of non-radiative. • Strain reducing layer (InGaAs) is responsible for high activation energy. • Significant deviation from the Varshni model, E(T) = E − αT{sup 2}/T + β. - Abstract: Vertically coupled, multilayered InAs/GaAs quantum dots (QDs) covered with thin InGaAs strain-reducing layers (SRLs) are in demand for various technological applications. We investigated low temperature photoluminescence of single and multilayered structures in which the SRL thickness was varied. The SRL layer was responsible for high activation energies. Deviation of experimental data from the Varshni (1967) model, E(T) = E − ∞ T{sup 2}/T + β, suggests that the InAs-layered QDs have properties different from those in bulk material. Anomalous ground-state peak linewidths (FWHM), especially for annealed multilayer structures, were observed. A ground-state peak blue-shift with a broadened linewidth was also observed. Loss of intensity was detected in samples annealed at 800 °C. Presence of SRLs prevents formation of non-radiative centers under high temperature annealing. The results indicate the potential importance of such structures in optoelectronic applications.

  16. Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Treu, J.; Speckbacher, M.; Saller, K.; Morkötter, S.; Döblinger, M.; Xu, X.; Riedl, H.; Abstreiter, G.; Finley, J. J.; Koblmüller, G.

    2016-02-01

    We delineate the optimized growth parameter space for high-uniformity catalyst-free InGaAs nanowire (NW) arrays on Si over nearly the entire alloy compositional range using selective area molecular beam epitaxy. Under the required high group-V fluxes and V/III ratios, the respective growth windows shift to higher growth temperatures as the Ga-content x(Ga) is tuned from In-rich to Ga-rich InGaAs NWs. Using correlated x-ray diffraction, transmission electron microscopy, and micro-photoluminescence spectroscopy, we identify structural defects to govern luminescence linewidths in In-rich (x(Ga) < 0.4) and Ga-rich (x(Ga) > 0.6) NWs, whereas limitations at intermediate Ga-content (0.4 < x(Ga) < 0.6) are mainly due to compositional inhomogeneities. Most remarkably, the catalyst-free InGaAs NWs exhibit a characteristic transition in crystal structure from wurtzite to zincblende (ZB) dominated phase near x(Ga) ˜ 0.4 that is further reflected in a cross-over from blue-shifted to red-shifted photoluminescence emission relative to the band edge emission of the bulk ZB InGaAs phase.

  17. Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure.

    PubMed

    Wang, Peng; Chen, Qimiao; Wu, Xiaoyan; Cao, Chunfang; Wang, Shumin; Gong, Qian

    2016-12-01

    InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL) emission of the InAs/InGaAs DWELL structure. A linear followed by a saturation behavior of the emission redshift was observed as a function of the SBL and SRL thickness, respectively. The PL intensity is greatly enhanced by applying both of the SRL and SBL. Finite element analysis simulation and transmission electron microscopy (TEM) measurement were carried out to analyze the strain distribution in the InAs QD and the InGaAs SBL. The results clearly indicate the strain reduction in the QD induced by the SBL, which are likely the main cause for the emission redshift. PMID:26932758

  18. Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

    PubMed

    Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

    2016-03-01

    Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links. PMID:26901448

  19. In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures

    NASA Astrophysics Data System (ADS)

    Pi, T. W.; Lin, Y. H.; Fanchiang, Y. T.; Chiang, T. H.; Wei, C. H.; Lin, Y. C.; Wertheim, G. K.; Kwo, J.; Hong, M.

    2015-04-01

    The electronic structure of single-crystal (In)GaAs deposited with tri-methylaluminum (TMA) and water via atomic layer deposition (ALD) is presented with high-resolution synchrotron radiation core-level photoemission and capacitance-voltage (CV) characteristics. The interaction of the precursor atoms with (In)GaAs is confined at the topmost surface layer. The Ga-vacant site on the GaAs(111)A-2 × 2 surface is filled with Al, thereby effectively passivating the As dangling bonds. The As-As dimers on the GaAs(001)-2 × 4 surface are entirely passivated by one cycle of TMA and water. The presumed layerwise deposition fails to happen in GaAs(001)-4 × 6. In In0.20Ga0.80As(001)-2 × 4, the edge row As atoms are partially bonded with the Al, and one released methyl then bonds with the In. It is suggested that the unpassivated surface and subsurface atoms cause large frequency dispersions in CV characteristics under the gate bias. We also found that the (In)GaAs surface is immune to water in ALD. However, the momentary exposure of it to air (less than one minute) introduces significant signals of native oxides. This indicates the necessity of in situ works of high κ/(In)GaAs-related experiments in order to know the precise interfacial atomic bonding and thus know the electronic characteristics. The electric CV measurements of the ALD-Al2O3 on these (In)GaAs surfaces are correlated with their electronic properties.

  20. In situ tuning biexciton antibinding-binding transition and fine structure splitting through hydrostatic pressure in single InGaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Wei, Hai; Wu, Xuefei; Dou, Xiuming; Ding, Kun; Yu, Ying; Ni, Haiqiao; Niu, Zhichuan; Ji, Yang; Li, Shushen; Jiang, Desheng; Guo, Guang-Can; He, Lixin; Sun, Baoquan; Institute of Semiconductors, CAS, PR China Team; Key Laboratory of Quantum Information, University of Science; Technology of China, PR China Team

    2014-03-01

    We demonstrate that the exciton and biexciton emission energies as well as exciton fine structure splitting (FSS) in single (In,Ga)As/GaAs quantum dots (QDs) can be efficiently tuned using hydrostatic pressure in situ in an optical cryostat at up to 4.4 GPa. The maximum exciton emission energy shift is up to 380 meV, and the FSS is up to 150 μeV. We successfully produce a biexciton antibinding-binding transition in QDs, which is the key experimental condition that generates color- and polarization-indistinguishable photon pairs from the cascade of biexciton emissions and that generates entangled photons via a time-reordering scheme. We also perform the atomistic pseudopotential calculations on realistic (In,Ga)As/GaAs QDs to understand the physical mechanism underlying the hydrostatic pressure-induced effects.

  1. Narrow optical line width from site-controlled InGaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Yang, Lily; Yakes, Michael; Sweeney, Timothy; Carter, Samuel; Kim, Chulsoo; Kim, Mijin; Bracker, Allan; Gammon, Daniel

    2013-03-01

    The incorporation of self-assembled quantum dots (QDs) in systematically scalable quantum devices requires a method of nucleating dots with nanometer-scale spatial accuracy while preserving their narrow optical line width. We have developed a technique combining e-beam lithography, wet etching, and molecular beam epitaxial (MBE) growth to deterministically position InGaAs QDs with spectrometer limited photoluminescence line widths. Our technique takes advantage of the anisotropy in GaAs growth to evolve an etched pattern of holes and lines into faceted structures in which dots nucleate. Using this technique, we were able to grow a buffer layer of pure GaAs up to 90 nm in thickness between the processed surface and the dot nucleation surface, effectively separating the QDs from unavoidable residual defects and impurities on the patterned surface that broaden their optical line widths. Additionally, we demonstrate control over the number of dots nucleating per site, from single to a chain of several, by varying the dimensions of the original pattern. Our dots are grown in a Schottky diode structure. Their PL spectrum shows discrete charging transitions, with narrow linewidths near the spectrometer's resolution limit of 20 micro eV.

  2. InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 band k → · p → theory

    NASA Astrophysics Data System (ADS)

    Pham, Anh-Tuan; Jin, Seonghoon; Choi, Woosung; Lee, Myoung-Jae; Cho, Seong-Ho; Kim, Young-Tae; Lee, Keun-Ho; Park, Youngkwan

    2015-11-01

    8 band k → · p → method is used to calculate subband structures of InGaAs inversion layers accounting for strong coupling between conduction and valence bands around Γ point as well as quantum confinement. Inversion layer mobility is computed employing Kubo-Greenwood formalism. Scatterings due to acoustic phonons, polar optical phonons, ionized impurities, interface fixed charges, surface roughness, and alloy disorder are included. The simulated low-field electron mobility results are in good agreement with experimental data with and without an InP capping layer.

  3. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Wu, X. F.; Wei, H.; Dou, X. M.; Ding, K.; Yu, Y.; Ni, H. Q.; Niu, Z. C.; Ji, Y.; Li, S. S.; Jiang, D. S.; Guo, G.-C.; He, L. X.; Sun, B. Q.

    2014-07-01

    Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single (In,Ga)As/GaAs quantum dots (QDs) have been continuously tuned using hydrostatic pressure up to 4.4 GPa. The blue shift of excitonic emission and the increase of FSS are 320 meV and 150\\ \\mu\\text{eV} , respectively, which are significantly greater than those that could be achieved by previously reported techniques. We successfully produce a biexciton antibinding-binding transition along with a detailed polarization-resolved emission spectra. It is shown that the biexciton binding energy linearly increases with increasing pressure and tends to be sublinear at high pressure. We have performed atomistic pseudopotential calculations on realistic QDs to understand the pressure-induced effects.

  4. Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

    NASA Astrophysics Data System (ADS)

    Yang, V. K.; Ting, S. M.; Groenert, M. E.; Bulsara, M. T.; Currie, M. T.; Leitz, C. W.; Fitzgerald, E. A.

    2003-05-01

    In order to study the luminescent efficiency of InGaAs quantum wells on Si via SiGe interlayers, identical In0.2Ga0.8As quantum well structures with GaAs and Al0.25Ga0.75As cladding layers were grown on several substrates by an atmospheric metalorganic vapor deposition system. The substrates used include GaAs, Si, Ge, and SiGe virtual substrates. The SiGe virtual substrates were graded from Si substrates to 100% Ge content. Because of the small lattice mismatch between GaAs and Ge (0.07%), high-quality GaAs-based thin films with threading dislocation densities <3×106 cm-2 were realized on these SiGe substrates. Quantitative cathodoluminescence was used to compare the luminescent efficiency of the quantum well structure on the different substrates and cross-sectional transmission electron microscopy was used to characterize dislocation densities. Our results show that the InGaAs quantum wells grown on the GaAs substrates have the highest luminescent efficiencies due to the lowest dislocation densities. Interestingly, InGaAs quantum wells grown on the SiGe virtual substrates outperform those on Ge substrates, both in terms of luminescent efficiency and dislocation density. This difference is attributed to the variation in thermal expansion coefficient (α) and its impact on defect structure during the process cycle. The SiGe virtual substrate has a smaller α compared to a Ge substrate because of the smaller α of the Si substrate, which helps minimize compressive strain in the quantum well layer during the temperature decrease from the growth temperature. Consequently, fewer misfit dislocations are created between the quantum well and cladding interfaces. These misfits can greatly affect the luminescent efficiency since they can act as recombination sites. In general, the efficiencies of the quantum wells on the SiGe and Ge substrates were affected only by higher misfit dislocation densities, whereas the quantum wells on the Si substrate had low efficiency due to

  5. Colloidal QDs-polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Gordillo, H.; Suárez, I.; Rodríguez-Cantó, P.; Abargues, R.; García-Calzada, R.; Chyrvony, V.; Albert, S.; Martínez-Pastor, J.

    2012-04-01

    Nanometer-size colloidal semiconductor nanocrystals, or Quantum Dots (NQD), are very prospective active centers because their light emission is highly efficient and temperature-independent. Nanocomposites based on the incorporation of QDs inside a polymer matrix are very promising materials for application in future photonic devices because they combine the properties of QDs with the technological feasibility of polymers. In the present work some basic applications of these new materials have been studied. Firstly, the fabrication of planar and linear waveguides based on the incorporation of CdS, CdSe and CdTe in PMMA and SU-8 are demonstrated. As a result, photoluminescence (PL) of the QDs are coupled to a waveguide mode, being it able to obtain multicolor waveguiding. Secondly, nanocomposite films have been evaluated as photon energy down-shifting converters to improve the efficiency of solar cells.

  6. Research and experiment of InGaAs shortwave infrared imaging system based on FPGA

    NASA Astrophysics Data System (ADS)

    Ren, Ling; Min, Chaobo; Sun, Jianning; Gu, Yan; Yang, Feng; Zhu, Bo; Pan, Jingsheng; Guo, Yiliang

    2015-04-01

    The design and imaging characteristic experiment of InGaAs shortwave infrared imaging system are introduced. Through the adoption of InGaAs focal plane array, the real time image process structure of InGaAs shortwave infrared imaging system is researched. The hardware circuit and image process software of the imaging system based on FPGA are researched. The InGaAs shortwave infrared imaging system is composed of shortwave infrared lens, InGaAs focal plane array, temperature controller module, power supply module, analog-to-digital converter module, digital-to-analog converter module, FPGA image processing module and optical-mechanical structure. The main lock frequency of InGaAs shortwave infrared imaging system is 30MHz. The output mode of the InGaAs shortwave infrared imaging system is PAL analog signal. The power dissipation of the imaging system is 2.6W. The real time signal process in InGaAs shortwave infrared imaging system includes non-uniformly correction algorithm, bad pixel replacement algorithm, and histogram equalization algorithm. Based on the InGaAs shortwave infrared imaging system, the imaging characteristic test of shortwave infrared is carried out for different targets in different conditions. In the foggy weather, the haze and fog penetration are tested. The InGaAs shortwave infrared imaging system could be used for observing humans, boats, architecture, and mountains in the haze and foggy weather. The configuration and performance of InGaAs shortwave infrared imaging system are respectively logical and steady. The research on the InGaAs shortwave infrared imaging system is worthwhile for improving the development of night vision technology.

  7. Photoexcited-induced sensitivity of InGaAs surface QDs to environment.

    PubMed

    Milla, M J; Ulloa, J M; Guzmán, A

    2014-11-01

    A detailed analysis of the impact of illumination on the electrical response of In0.5Ga0.5As surface nanostructures is carried out as a function of different relative humidity conditions. The importance of the surface-to-volume ratio for sensing applications is once more highlighted. From dark-to-photo conditions, the sheet resistance (SR) of a three-dimensional In0.5Ga0.5As nanostructure decays two orders of magnitude compared with that of a two-dimensional nanostructure. The electrical response is found to be vulnerable to the energy of the incident light and the external conditions. Illuminating with high energy light translates into an SR reduction of one order of magnitude under humid atmospheres, whereas it remains nearly unchanged under dry environments. Conversely, lighting with energy below the bulk energy bandgap, shows a negligible effect on the electrical properties regardless the local moisture. Both illumination and humidity are therefore needed for sensing. Photoexcited carriers can only contribute to conductivity if surface states are inactive due to water physisorption. The strong dependence of the electrical response on the environment makes these nanostructures very suitable for the development of highly sensitive and efficient sensing devices. PMID:25325146

  8. Electrostatic assembles and optical properties of Au CdTe QDs and Ag/Au CdTe QDs

    NASA Astrophysics Data System (ADS)

    Yang, Dongzhi; Wang, Wenxing; Chen, Qifan; Huang, Yuping; Xu, Shukun

    2008-09-01

    Au-CdTe and Ag/Au-CdTe assembles were firstly investigated through the static interaction between positively charged cysteamine-stabilized CdTe quantum dots (QDs) and negatively charged Au or core/shell Ag/Au nano-particles (NCs). The CdTe QDs synthesized in aqueous solution were capped with cysteamine which endowed them positive charges on the surface. Both Au and Ag/Au NCs were prepared through reducing precursors with gallic acid obtained from the hydrolysis of natural plant poly-phenols and favored negative charges on the surface of NCs. The fluorescence spectra of CdTe QDs exhibited strong quenching with the increase of added Au or Ag/Au NCs. Railey resonance scattering spectra of Au or Ag/Au NCs increased firstly and decreased latter with the concentration of CdTe QDs, accompanied with the solution color changing from red to purple and colorless at last. Experimental results on the effects of gallic acid, chloroauric acid tetrahydrate and other reagents demonstrated the static interaction occurred between QDs and NCs. This finding reveals the possibilities to design and control optical process and electromagnetic coupling in hybrid structures.

  9. Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure

    NASA Astrophysics Data System (ADS)

    Kurtze, H.; Bayer, M.

    2016-07-01

    Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock-Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.

  10. Low dark current InGaAs detector arrays for night vision and astronomy

    NASA Astrophysics Data System (ADS)

    MacDougal, Michael; Geske, Jon; Wang, Chad; Liao, Shirong; Getty, Jonathan; Holmes, Alan

    2009-05-01

    Aerius Photonics has developed large InGaAs arrays (1K x 1K and greater) with low dark currents for use in night vision applications in the SWIR regime. Aerius will present results of experiments to reduce the dark current density of their InGaAs detector arrays. By varying device designs and passivations, Aerius has achieved a dark current density below 1.0 nA/cm2 at 280K on small-pixel, detector arrays. Data is shown for both test structures and focal plane arrays. In addition, data from cryogenically cooled InGaAs arrays will be shown for astronomy applications.

  11. InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

    SciTech Connect

    Lee, J. H.; Wang, Zh. M.; Strom, N. W.; Mazur, Yu. I.; Salamo, G. J.

    2006-11-13

    Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals.

  12. Crosstalk study of near infrared InGaAs detectors

    NASA Astrophysics Data System (ADS)

    Li, Xue; Tang, Hengjing; Li, Tao; Fan, Cui; Shao, Xiumei; Li, Jianwei; Wei, Jun; Gong, Haimei

    2016-05-01

    Crosstalk characteristics of high density FPA detectors attract widespread attention in the application of electro-optical systems. Crosstalk characteristics of near-infrared (NIR) InGaAs photodiodes and focal plane arrays (FPAs) were studied in this paper. The mesa type detector was investigated by using laser beam induced current technique (LBIC) to measure the absorption outside the designed photosensitive area, and the results show that the excess absorption enlarges the crosstalk of the adjacent pixels. The structure optimization using the effective absorption layer between the pixels can effectively reduce the crosstalk to 2.5%. The major crosstalk components of the optimization photodiode come from the electronic signal caused by carrier lateral diffusion. For the planar type detectors, test structures were used to compare the crosstalk of different structures, and the guard ring structure shows good suppression of the crosstalk. Then the back-illuminated 32x32 InGaAs photodiodes with 30μm pitch were designed, and LBIC was used to measure its lateral diffusion of the effective carriers and fill factor of photosensitive area. The results indicate that the fill factor of detectors can reach up to 98% when the diffusion region is optimized, and the minimum response exists between two neighborhood pixels. Based on these crosstalk measurement results and optimizing structure designs, the linear InGaAs photodiodes were designed and thus the InGaAs FPA assembly was fabricated. The assembly shows higher electro-optical performance and good improvement on crosstalk. The assembly was applied in infrared imaging system and modulation transfer function (MTF) of FPA assembly was calculated to be above 0.50. The clear image based on FPA assembly was obtained.

  13. Dielectric function of InGaAs in the visible

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. E.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1990-01-01

    Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

  14. Dielectric function of InGaAs in the visible

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Yao, H. D.; Snyder, P. G.; Woolam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.; Sieg, R. E.

    1990-01-01

    Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

  15. Metastable growth of pure wurtzite InGaAs microstructures.

    PubMed

    Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu; Chang-Hasnain, Connie J

    2014-08-13

    III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller than certain critical values. However, thin nanowires are more vulnerable to surface recombination, and this can ultimately limit their performances as practical devices. In this work, we study a metastable growth mechanism that can yield purely WZ-phased InGaAs microstructures on silicon. InGaAs nucleates as sharp nanoneedles and expand along both axial and radial directions simultaneously in a core-shell fashion. While the base can scale from tens of nanometers to over a micron, the tip can remain sharp over the entire growth. The sharpness maintains a high local surface-to-volume ratio, favoring hexagonal lattice to grow axially. These unique features lead to the formation of microsized pure WZ InGaAs structures on silicon. To verify that the WZ microstructures are truly metastable, we demonstrate, for the first time, the in situ transformation from WZ to the energy-favorable ZB phase inside a transmission electron microscope. This unconventional core-shell growth mechanism can potentially be applied to other III-V materials systems, enabling the effective utilization of the extraordinary properties of the metastable wurtzite crystals. PMID:24988280

  16. Multijunction InGaAs thermophotovoltaic devices

    SciTech Connect

    Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.; Wilt, D.M.; Murray, C.S.

    1998-12-31

    A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. MIMs were fabricated with an active area of 0.9 {times} 1 cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm{sup 2}, under flashlamp testing. The 0.55 eV MIMs demonstrated a Voc of 4.85 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. Electrical performance results for these MIMs are presented.

  17. Antibacterial potential of rutin conjugated with thioglycolic acid capped cadmium telluride quantum dots (TGA-CdTe QDs)

    NASA Astrophysics Data System (ADS)

    Ananth, Devanesan Arul; Rameshkumar, Angappan; Jeyadevi, Ramachandran; Jagadeeswari, Sivanadanam; Nagarajan, Natarajan; Renganathan, Rajalingam; Sivasudha, Thilagar

    2015-03-01

    Quantum dots not only act as nanocarrier but also act as stable and resistant natural fluorescent bio markers used in various in vitro and in vivo photolabelling and biological applications. In this study, the antimicrobial potential of TGA-CdTe QDs and commercial phenolics (rutin and caffeine) were investigated against Escherichiacoli. UV absorbance and fluorescence quenching study of TGA-CdTe QDs with rutin and caffeine complex was measured by spectroscopic technique. QDs-rutin conjugate exhibited excellent quenching property due to the -OH groups present in the rutin structure. But the same time caffeine has not conjugated with QDs because of lacking of -OH group in its structure. Photolabelling of E. coli with QDs-rutin and QDs-caffeine complex was analyzed by fluorescent microscopic method. Microbe E. coli cell membrane damage was assessed by atomic force (AFM) and confocal microscopy. Based on the results obtained, it is suggested that QDs-rutin conjugate enhance the antimicrobial activity more than the treatment with QDs, rutin and caffeine alone.

  18. Antibacterial potential of rutin conjugated with thioglycolic acid capped cadmium telluride quantum dots (TGA-CdTe QDs).

    PubMed

    Ananth, Devanesan Arul; Rameshkumar, Angappan; Jeyadevi, Ramachandran; Jagadeeswari, Sivanadanam; Nagarajan, Natarajan; Renganathan, Rajalingam; Sivasudha, Thilagar

    2015-03-01

    Quantum dots not only act as nanocarrier but also act as stable and resistant natural fluorescent bio markers used in various in vitro and in vivo photolabelling and biological applications. In this study, the antimicrobial potential of TGA-CdTe QDs and commercial phenolics (rutin and caffeine) were investigated against Escherichiacoli. UV absorbance and fluorescence quenching study of TGA-CdTe QDs with rutin and caffeine complex was measured by spectroscopic technique. QDs-rutin conjugate exhibited excellent quenching property due to the -OH groups present in the rutin structure. But the same time caffeine has not conjugated with QDs because of lacking of -OH group in its structure. Photolabelling of E. coli with QDs-rutin and QDs-caffeine complex was analyzed by fluorescent microscopic method. Microbe E. coli cell membrane damage was assessed by atomic force (AFM) and confocal microscopy. Based on the results obtained, it is suggested that QDs-rutin conjugate enhance the antimicrobial activity more than the treatment with QDs, rutin and caffeine alone. PMID:25544184

  19. Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma

    SciTech Connect

    Lescaut, B.; Nissim, Y.I.; Bresse, J.F.

    1996-12-31

    Stable and optimum characteristics of micro-optoelectronic devices and circuits require the passivation of the free surface of the III-V materials. An integrated process using a combination of surface cleaning and photochemical dielectric encapsulation is proposed for passivation. The passivation of InGaAs with a short ammonia plasma cleaning has been obtained. The treated surface has been protected with a photochemical dielectric encapsulation. MIS structures fabricated on treated InGaAs surfaces have shown a low density of interface traps and a small hysteresis. This process is an integration of two cold processes that enable its use at the end of the process fabrication of circuits.

  20. Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns

    PubMed Central

    2011-01-01

    InAs quantum dots (QDs) grown on InGaAs cross-hatch pattern (CHP) by molecular beam epitaxy are characterized by photoluminescence (PL) at 20 K. In contrast to QDs grown on flat GaAs substrates, those grown on CHPs exhibit rich optical features which comprise as many as five ground-state emissions from [1-10]- and [110]-aligned QDs, two wetting layers (WLs), and the CHP. When subject to in situ annealing at 700°C, the PL signals rapidly degrades due to the deterioration of the CHP which sets the upper limit of overgrowth temperature. Ex situ hydrogen annealing at a much lower temperature of 350°C, however, results in an overall PL intensity increase with a significant narrowing and a small blueshift of the high-energy WL emission due to hydrogen bonding which neutralizes defects and relieves associated strains. PMID:21849063

  1. Development and characterization of PCDTBT:CdSe QDs hybrid solar cell

    SciTech Connect

    Dixit, Shiv Kumar Bhatnagar, Chhavi Kumari, Anita Madhwal, Devinder Bhatnagar, P. K. Mathur, P. C.

    2014-10-15

    Solar cell consisting of low band gap polymer poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10, 30-benzothiadiazole)] (PCDTBT) as donor and cadmium selenide/zinc sulphide (CdSe/ZnS) core shell quantum dots (QDs) as an acceptor has been developed. The absorption measurements show that the absorption coefficient increases in bulk heterojunction (BHJ) structure covering broad absorption spectrum (200nm–700nm). Also, the photoluminescence (PL) of the PCDTBT:QDs film is found to decrease by an order of magnitude showing a significant transfer of electrons to the QDs. With this approach and under broadband white light with an irradiance of 8.19 mW/cm{sup 2}, we have been able to achieve a power conversion efficiency (PCE) of 3.1 % with fill factor 0.42 for our typical solar cell.

  2. Development and characterization of PCDTBT:CdSe QDs hybrid solar cell

    NASA Astrophysics Data System (ADS)

    Dixit, Shiv Kumar; Bhatnagar, Chhavi; Kumari, Anita; Madhwal, Devinder; Bhatnagar, P. K.; Mathur, P. C.

    2014-10-01

    Solar cell consisting of low band gap polymer poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] (PCDTBT) as donor and cadmium selenide/zinc sulphide (CdSe/ZnS) core shell quantum dots (QDs) as an acceptor has been developed. The absorption measurements show that the absorption coefficient increases in bulk heterojunction (BHJ) structure covering broad absorption spectrum (200nm-700nm). Also, the photoluminescence (PL) of the PCDTBT:QDs film is found to decrease by an order of magnitude showing a significant transfer of electrons to the QDs. With this approach and under broadband white light with an irradiance of 8.19 mW/cm2, we have been able to achieve a power conversion efficiency (PCE) of 3.1 % with fill factor 0.42 for our typical solar cell.

  3. Aligned ZnO nanorod arrays growth on GaN QDs for excellent optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sang, Dandan; Li, Hongdong; Wang, Qinglin

    2016-02-01

    Uniformly aligned ZnO nanorod (NR) arrays grown on GaN quantum dots (QDs) as preferred nucleation sites are imperative for designing field emission emitters, ultraviolet photodetectors and light-emitting diodes for a wide range of new optoelectronic applications. In a recent study (2015 Nanotechnology 26 415601), Qi et al reported a novel method of fabricating ZnO NRs arrays with uniform shape, the density of which is easily tunable by adjusting the density of GaN QDs. This approach opens a door to obtaining a combination of 0D and 1D structures for optoelectronic applications.

  4. 256×1 element linear InGaAs short wavelength near-infrared detector arrays

    NASA Astrophysics Data System (ADS)

    Li, Xue; Tang, Hengjing; Fan, Guangyu; Liu, Dafu; Shao, Xiumei; Zhang, Yonggang; Zhang, Haiyan; Chen, Xinyu; Zhu, Sangen; Gong, Haimei; Fang, Jiaxiong

    2008-03-01

    256×1 element linear InGaAs detector arrays assembly have been fabricated for the short wave infrared band(0.9~1.7μm), including the detector, CMOS readout circuits, thermoelectric cooler in a sealed package. The InGaAs detectors were achieved by mesa structure on the p-InP/i-InGaAs/n-InP double hetero-structure epitaxial material. 256×1 element linear InGaAs detectors were wire-bonded to 128×1 element odd and even ROIC, which were packaged in a dual-in-line package by parallel sealing. The characteristics of detectors and detector arrays module were investigated at the room temperature. The detector shows response peak at 1.62μm with 50% cutoff wavelength of 1.73μm and average R0A with 5.02KΩ•cm2. Response non-uniformity and average peak detectivity of 256×1 element linear InGaAs detector arrays are 3.10% and 1.38×10 12cmHz 1/2/W, respectively.

  5. Ellipsometric study of InGaAs MODFET material

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. E.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.

    1990-01-01

    In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements.

  6. Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

    NASA Astrophysics Data System (ADS)

    Suzuki, Rena; Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang-Hyeon; Hoshii, Takuya; Maeda, Tatsuro; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi

    2012-10-01

    We have studied the impact of atomic-layer-deposition (ALD) temperature on the HfO2/InGaAs metal-oxide-semiconductor (MOS) interface with a comparison to the Al2O3/InGaAs interface. It is found that the interface properties such as the C-V characteristics and the interface trap density (Dit) and the interface structure of HfO2/InGaAs have strong dependence on the ALD temperature, while the Al2O3/InGaAs interfaces hardly depend on it. As a result, we have achieved the HfO2/InGaAs interfaces with low Dit comparable to that in the Al2O3/InGaAs interface by lowering the ALD temperature down to 200 °C or less. Also, we have found that As2O3 and Ga2O3 formed at the interface during ALD increase with a decrease in the ALD temperature. Combined with the ALD temperature dependence of the electrical characteristics, the better C-V characteristics and the lower Dit obtained at the lower ALD temperature can be explained by the As2O3 and Ga2O3 passivation of the HfO2/InGaAs interfaces, which is consistent with a reported theoretical result on the effective passivation of III-V MOS interfaces by trivalent oxides.

  7. Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control

    PubMed Central

    2011-01-01

    The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively. PMID:22136595

  8. Dark current reduction for 2.5 {micro}m wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature

    SciTech Connect

    D`Hondt, M.; Moerman, I.; Demeester, P.

    1996-12-31

    Optical components with wavelengths ranging between 1.5 and 2.5{micro}m are becoming increasingly important. Applications include various earth observation missions, NIR spectroscopy and fiber-optic communications at 2.55{micro}m. A possible material candidate for devices at 2.5{micro}m wavelength is In{sub .82}Ga{sub .18}As with a lattice mismatch of {+-}2% with respect to the InP-substrate. To improve optical and electrical performances of a mismatched device an effective buffer layer structure is wanted: a good buffer layer prevents the generated dislocations to propagate towards the mismatched active layer. Especially the dark current, which needs to be very low for space applications (low noise), is strongly influenced by those dislocations which act as generation-recombination centers. The authors describe the influence of growth temperature, bufferlayer structure and substrate orientation on the dark current density of test devices. All growth runs were performed by means of low-pressure MOVPE, using a horizontal liner. The processing of these devices consisted of deposition of TiAu contacts, by using a removable Ni mask, with openings of different size and shape. These metal contacts were in turn used as a mask for the etching of the mesa. Afterwards a AuGe/Ni back contact was deposited.

  9. Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

    SciTech Connect

    Chang, C.-Y. Takenaka, M.; Takagi, S.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.

    2015-08-28

    We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

  10. Dimensionality of InGaAs nonlinear optical response

    SciTech Connect

    Bolton, S.R. |

    1995-07-01

    In this thesis the ultrafast optical properties of a series of InGaAs samples ranging from the two to the three dimensional limit are discussed. An optical system producing 150 fs continuum centered at 1.5 microns was built. Using this system, ultrafast pump-probe and four wave mixing experiments were performed. Carrier thermalization measurements reveal that screening of the Coulomb interaction is relatively unaffected by confinement, while Pauli blocking nonlinearities at the band edge are approximately twice as strong in two dimensions as in three. Carrier cooling via phonon emission is influenced by confinement due both to the change in electron distribution function and the reduction in electron phonon coupling. Purely coherent band edge effects, as measured by the AC Stark effect and four wave mixing, are found to be dominated by the changes in excitonic structure which take place with confinement.

  11. Site-Controlled Growth of Single InP QDs

    SciTech Connect

    Vlasov, A. S. Mintairov, A. M.; Kalyuzhnyy, N. A.; Mintairov, S. A.; Salii, R. A.; Denisyuk, A. I.; Babunts, R. A.

    2015-08-15

    The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate “defects” formed by a focused beam of Ga{sup +} ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (μm){sup −2} can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.

  12. Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission

    SciTech Connect

    Urbanczyk, A.; Hamhuis, G. J.; Noetzel, R.

    2010-03-15

    We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.

  13. n/p/n Tunnel Junction InGaAs Monolithic Interconnected Module (MIM)

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Murray, Christopher S.; Fatemi, Navid S.; Weizer, Victor

    2005-01-01

    The Monolithic Interconnected Module (MIM), originally introduced at the First NREL thermophotovoltaic (TPV) conference, consists of low-bandgap indium gallium arsenide (InGaAs) photovoltaic devices, series interconnected on a common semi-insulating indium phosphide (inP) substrate. An infrared reflector is deposited on the back surface of the substrate to reflect photons, which were not absorbed in the first pass through the structure. The single largest optical loss in the current device occurs int he heavily doped p-type emitter. A new MIM design (pat.pend.) has been developed which flips the polarity of the conventional MIM cell (i.e., n/p rather than p/n), eliminating the need for the high conductivity p-type emitter. The p-type base of the cell is connected to the n-type lateral conduction layer through a thin InGaAs tunnel junction. 0.58 eV and 0.74 eV InGaAs devices have demonstrated reflectances above 90% for wavelengths beyond the bandgap (greater than 95% for unprocessed structures). Electrical measurements indicate minimal voltage drops across the tunnel junction (less than mV/junction under 1200K-blackbody illumnination) and fill factors that are above 70% at current densities (J(sub sc)) above 8 Angstroms per square centimeters for the 0.74eV devices.

  14. n/p/n tunnel junction InGaAs Monolithic Interconnected Module (MIM)

    SciTech Connect

    Wilt, D.M.; Murray, C.S.; Fatemi, N.S.; Weizer, V.

    1999-03-01

    The Monolithic Interconnected Module (MIM), originally introduced at the First NREL thermophotovoltaic (TPV) conference, consists of low-bandgap indium gallium arsenide (InGaAs) photovoltaic devices, series interconnected on a common semi-insulating indium phosphide (InP) substrate. An infrared reflector is deposited on the back surface of the substrate to reflect photons, which were not absorbed in the first pass through the structure. The single largest optical loss in the current device occurs in the heavily doped {ital p}-type emitter. A new MIM design (pat pend.) has been developed which flips the polarity of the conventional MIM cell (i.e., n/p rather than p/n), eliminating the need for the high conductivity {ital p}-type emitter. The {ital p}-type base of the cell is connected to the {ital n}-type lateral conduction layer through a thin InGaAs tunnel junction. 0.58 eV and 0.74 eV InGaAs devices have demonstrated reflectances above 90{percent} for wavelengths beyond the bandgap ({gt}95{percent} for unprocessed structures). Electrical measurements indicate minimal voltage drops across the tunnel junction ({lt}3 mV/junction under 1200 K-blackbody illumination) and fill factors that are above 70{percent} at current densities (J{sub sc}) above 8 A/cm{sup 2} for the 0.74 eV devices. {copyright} {ital 1999 American Institute of Physics.}

  15. Fluorescence of colloidal PbSe/PbS QDs in NIR luminescent solar concentrators.

    PubMed

    Aeberhard, Urs; Vaxenburg, Roman; Lifshitz, Efrat; Tomić, Stanko

    2012-12-21

    For applications in luminescent solar concentrators harvesting subgap photons, either via direct irradiation of solar cells with optimized band gap or via sensitization of an up-conversion process, exact knowledge and tunability of both the spectral shape and the intensity of the emission are of paramount importance. In this work, we investigate theoretically the photoluminescence spectra of colloidal core-shell PbSe/PbS QDs with type II alignments in the valence band. The method builds on a steady-state formulation of the non-equilibrium Greens function theory for a microscopic system of coupled electrons, photons and phonons interfaced with electronic structure calculations based on a k·p model for PbSe/PbS core-shell QDs. The resulting output spectral density of photons in a realistic QD ensemble is obtained via the renormalization of the incident spectrum according to the polarization of the system. PMID:23080206

  16. Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates

    SciTech Connect

    Selcuk, E.; Hamhuis, G. J.; Noetzel, R.

    2007-11-01

    Self-organized anisotropic strain engineering guided on shallow- and deep-patterned GaAs (311)B substrates is exploited for formation of complex laterally ordered architectures of connected InGaAs quantum dot (QD) arrays and isolated InAs QD groups by molecular beam epitaxy. The combination of strain and step engineerings on shallow stripe-patterned substrates transforms the periodic spotlike arrangement of the InGaAs QD arrays and InAs QD groups (on planar substrates) into a zigzag arrangement of periodic stripes which are well ordered over macroscopic areas on zigzag mesa-patterned substrates. In contrast, the formation of slow-growing facets on deep-patterned substrates produces QD-free mesa sidewalls, while InGaAs QD arrays and InAs QD groups form on the GaAs (311)B top and bottom planes with arrangements modified only close to the sidewalls depending on the sidewall orientation. The QDs on the shallow- and deep-patterned substrates exhibit excellent optical properties up to room temperature. Therefore, the concept of guided self-organization demonstrated on shallow-patterned (due to steps) and deep-patterned (due to facets) substrates is highlighted for creation of complex architectures of laterally ordered QDs for future quantum functional devices.

  17. Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Murray, Christopher S.; Riley, David R.

    1997-01-01

    There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

  18. Lattice mismatched InGaAs on silicon photodetectors grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Papanicolaou, N. A.; Anderson, G. W.; Iliadis, A. A.; Christou, A.

    1993-02-01

    In0.5Ga0.5As on silicon photodetectors, including three types of interdigitated-finger devices as well as linear photoconductors, were fabricated and measured. The InGaAs/Si structure was grown by molecular beam epitaxy and utilized a 100 Å GaAs intervening nucleation layer between the silicon substrate and the InGaAs layers, step-graded InxGa1-xAs layers, and an in-situ grown 40 Å thick GaAs surface layer, which substantially enhanced the metal-semiconductor barrier height (Φb = 0.67 V) for the InGaAs. Schottky diodes fabricated independently of the photodetectors had nearly ideal characteristics with an ideality factor (n) of 1.02 and a reverse breakdown voltage of 40 V. The interdigitated Schottky photodetectors showed dark currents between <3nA and 54 μA at a 3 V bias and initial photoresponse rise times in the range of 600 to 725 ps, comparable to similar InGaAs metal-semiconductor-metal photodetectors grown lattice matched on InP. The photoconductors fabricated in the same material had rise times in the range of 575 to 1300 ps, thus being slightly slower, and had dark currents of 7 to 80 mA. The responsivity of the photoconductors was typically greater than that of the diodes by a factor of five to fifteen. The results show potential for monolithic integration of InGaAs photodetectors on silicon substrates.

  19. Molecualr-scale multicoordinating ligands for coating luminescent QDs and gold nanoparticles

    NASA Astrophysics Data System (ADS)

    Zhan, Naiqian

    Colloidal semiconductor quantum dots (QDs) are inorganic nanocrystals that possess several unique photophysical properties, including tunable narrow emission and remarkable photo- and chemical stability. They have large surface area, and thus can be decorated with large numbers and a variety of molecular vectors. These properties combined offer a potentially superior alternative to traditional organic fluorophore for advanced applications in bio-imaging and bio-sensing. Herein, our effort has centered on developing a series of metal coordinating ligands with controllable structures to modify the QD surfaces and construct biocompatible nanocrystals. The ligand architecture accounts for several factors: (i) variable coordination number, (ii) nature of the hydrophilic moiety, polyethylene glycol (PEG) or zwitterion, and (iii) versatility of end-reactive groups including amine, azide, carboxylic acid and aldehyde. The ligand design is combined with a newly developed photoligation strategy to promote the dispersion of luminescent QDs in buffer media. The dissertation is organized in six chapters: In chapter 1, we provide a brief introduction of the basic photophysical properties of QDs and the synthesis history for growing high quality semiconductor nanocrystals. We also present some of the most effective methods reported to date to prepare aqueous QD dispersions, discuss the effective chemical coupling strategies for conjugating biomolecules, and review the recent literatures that have used QD-bioconjugates for imaging and sensing purposes. In Chapter 2, we describe a novel photoligation strategy to promote the transfer of luminescent QDs from hydrophobic to hydrophilic media using lipic acid (LA)-based ligands. We also discusse the experimental conditions, mechanismfor in-situ ligand exchange and the generosity of the method towards the diverse functionality while maintaining the optical properties of the nanocrystals. In chapter 3, we present the design and synthesis

  20. A low noise high readout speed 512×128 ROIC for shortwave InGaAs FPA

    NASA Astrophysics Data System (ADS)

    Huang, SongLei; Huang, Zhangcheng; Chen, Yu; Tang, Hengjing; Fang, Jiaxiong

    2015-03-01

    A low noise high readout speed 512×128 readout Integrated circuit (ROIC) based on capacitance trans-impedance amplifier (CTIA) is designed in this paper. The ROIC is flip-chip bonded with Indium bumps to InGaAs detectors which cutoff wavelength is 1.7μm, as a hybrid structure (InGaAs FPA). The ROIC with 30μm pixel pitch and 50fF integrated capacitance, is fabricated in 0.5μm DPTM CMOS process. The results show that output noise is about 3.0E-4V which equivalent readout noise is 95e-, output voltage swing is better than 2.5V; the dynamic range of InGaAs FPA reaches 69.7dB@2ms, and the power dissipation is about 175mw. The peak detectivity of InGaAs FPA reaches 2E12cmHz1/2w-1 at 300K without TEC cooling.

  1. Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

    NASA Technical Reports Server (NTRS)

    Oyafuso, F.; Klimeck, G.; Boykin, T. B.; Bowen, R. C.; Allmen, P. von

    2003-01-01

    NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

  2. Preparation of water soluble L-arginine capped CdSe/ZnS QDs and their interaction with synthetic DNA: Picosecond-resolved FRET study

    SciTech Connect

    Giri, Anupam; Goswami, Nirmal; Lemmens, Peter; Pal, Samir Kumar

    2012-08-15

    Graphical abstract: Förster resonance energy transfer (FRET) studies on the interaction of water soluble arginine-capped CdSe/ZnS QDs with ethidium bromide (EB) labeled synthetic dodecamer DNA. Highlights: ► We have solubilized CdSe/ZnS QD in water replacing their TOPO ligand by L-arginine. ► We have studied arginine@QD–DNA interaction using FRET technique. ► Arginine@QDs act as energy donor and ethidium bromide-DNA acts as energy acceptor. ► We have applied a kinetic model to understand the kinetics of energy transfer. ► Circular dichroism studies revealed negligible perturbation in the DNA B-form in the arg@QD-DNA complex. -- Abstract: We have exchanged TOPO (trioctylphosphine oxide) ligand of CdSe/ZnS core/shell quantum dots (QDs) with an amino acid L-arginine (Arg) at the toluene/water interface and eventually rendered the QDs from toluene to aqueous phase. We have studied the interaction of the water soluble Arg-capped QDs (energy donor) with ethidium (EB) labeled synthetic dodecamer DNA (energy acceptor) using picoseconds resolved Förster resonance energy transfer (FRET) technique. Furthermore, we have applied a model developed by M. Tachiya to understand the kinetics of energy transfer and the distribution of acceptor (EB-DNA) molecules around the donor QDs. Circular dichroism (CD) studies revealed a negligible perturbation in the native B-form structure of the DNA upon interaction with Arg-capped QDs. The melting and the rehybridization pathways of the DNA attached to the QDs have been monitored by the CD which reveals hydrogen bonding is the associative mechanism for interaction between Arg-capped QDs and DNA.

  3. SWIR InGaAs focal plane arrays in France

    NASA Astrophysics Data System (ADS)

    Rouvié, A.; Huet, O.; Hamard, S.; Truffer, J. P.; Pozzi, M.; Decobert, J.; Costard, E.; Zécri, M.; Maillart, P.; Reibel, Y.; Pécheur, A.

    2013-06-01

    SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. The study of InGaAs FPA has begun few years ago with III-VLab, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has led to put quickly on the market a 320x256 InGaAs module. The recent transfer of imagery activities from III-VLab to Sofradir allows developing new high performances products, satisfying customers' new requirements. Especially, a 640x512 InGaAs module with a pitch of 15µm is actually under development to fill the needs of low light level imaging.

  4. InGaAs focal plane array developments and perspectives

    NASA Astrophysics Data System (ADS)

    Rouvié, A.; Coussement, Jérome; Huet, O.; Truffer, JP.; Pozzi, Maxime; Oubensaid, E. H.; Hamard, S.; Maillart, P.; Costard, E.

    2014-10-01

    Thanks to the various developments presently available, SWIR technology presents a growing interest and gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material, initially developed for telecommunications detectors, appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. In the context of this evolving domain, the InGaAs imagery activities from III-VLab were transferred to Sofradir, which provides a framework for the production activity with the manufacturing of high performances products: CACTUS320 and CACTUS640. The developments towards VGA format with 15μm pixel pitch, lead today to the industrialization of a new product: SNAKE SW. On one side, the InGaAs detection array presents high performances in terms of dark current and quantum efficiency. On the other side, the low noise ROIC has different additional functionalities. Then this 640x512 @ 15μm module appears as well suited to answer the needs of a wide range of applications. In this paper, we will present the Sofradir InGaAs technology, the performances of our last product SNAKE SW and the perspectives of InGaAs new developments.

  5. Hole transfer dynamics from QDs to tethered ferrocene derivatives

    NASA Astrophysics Data System (ADS)

    Alivisatos, A. Paul

    Quantum dots (QDs) have shown particular promise in recent years as light absorbers in solar energy conversion schemes. However, in solution junction solar devices such as QD-sensitized solar cells and photocatalytic water splitting systems, efficiencies are often limited by hole transfer from the photoexcited QD. This process is sluggish and can lead to oxidative photocorrosion of the QD material. In order to design highly efficient nanocrystal systems with hole transfer rates that outcompete these undesirable processes, a fundamental understanding of the parameters that control these rates is imperative.We have developed a model system to study charge transfer from QDs to surface bound acceptors, to fundamentally understand the charge transfer processes for QD systems, namely electronic coupling between the donor and acceptor and the thermodynamic driving force for the hole transfer process. Specifically, we examine hole transfer from the nearly spherical CdSe-core CdS-shell QDs with photoluminescence (PL) quantum yields over 80% to ferrocene derivatives bound to the QD surface via an alkane thiol linker. In this system, we mitigate the ill-defined nonradiative charge dynamic pathways that are intrinsic to native CdSe cores, and then controllably engineer on the surface charge acceptors with well-defined oxidation potentials, spatial distribution, and quantity. By Measuring the PL lifetime decay and calibrating the number of hole acceptor ligands per QD via quantitative `H NMR, we extracted the hole transfer rate per acceptor. This rate per acceptor could be varied over four orders of magnitude by changing the coupling between donor and acceptor through modulations in the CdS shell thickness and alkane chain length of the molecule. Furthermore, owning to the large number of acceptors on the surface, we achieve systems in which ~99% of the photoexcited holes are transferred to these well-defined mediators.We further mapped the relationship between the

  6. A sensitive photoelectrochemical biosensor for AFP detection based on ZnO inverse opal electrodes with signal amplification of CdS-QDs.

    PubMed

    Xu, Ru; Jiang, Yandong; Xia, Lei; Zhang, Tianxiang; Xu, Lin; Zhang, Shuang; Liu, Dali; Song, Hongwei

    2015-12-15

    In this work, ZnO inverse opals structure (IOs) based photoelectrochemical (PEC) electrode was fabricated for alpha-fetoprotein (AFP) detection. Then, the uniform CdS quantum dots (QDs) were hydrothermally synthesized, which allowed the binding of AFP and glucose oxidase (GOD) on CdS QDs, forming the AFP-CdS-GOD composite. The competitive immunosensor of AFP and the AFP-CdS-GOD composite with anti-AFP antibodies (Ab) immobilized on FTO (fluorine-doped tin oxide) /ZnO IOs electrode was successfully applied to the detection of AFP. GOD could catalyze glucose to produce hydrogen peroxide (H2O2) acting as an electron donor to scavenge photogenerated holes in the valence band of CdS QDs, reducing the recombination of electrons and holes of CdS QDs. Also the effective energy level matching between the conduction bands of CdS QDs and ZnO widened the range of light absorption, allowing for electron injection from excited CdS QDs to ZnO upon visible light irradiation, which enhanced the photocurrent. The results show that the immunosensor of AFP possesses a large linear detection range of 0.1-500 ng/ml with a detection limit of 0.01 ng/ml. It also exhibits excellent anti-interference property and acceptable stability. This work provides a promising method for achieving excellent photoelectrochemical biosensor detection of other proteins. PMID:26164013

  7. InGaAs monolithic interconnected modules (MIMs)

    SciTech Connect

    Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W. Jr.; Wilt, D.M.; Scheiman, D.; Brinker, D.; Murray, C.S.; Riley, D.

    1997-12-31

    A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. Also, the use of a BSR reduces the requirements imposed on a front surface interference filter and may lead to using only an anti-reflection coating. As a result, MIMs are exposed to the entire radiator output, and with increasing output power density. MIMs were fabricated with an active area of 0.9 x 1 cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm{sup 2}, under flashlamp testing. The 0.55 eV modules demonstrated a Voc of 4.85 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. The near IR reflectance (2--4 {micro}m) for both lattice-matched and lattice-mismatched structures was measured to be in the range of 80--85%. Latest electrical and optical performance results for these MIMs is presented.

  8. Visualization of reproduction toxicity of QDs for in vitro oocytes maturation

    NASA Astrophysics Data System (ADS)

    Xu, Gaixia; Lin, Xiaotan; Yong, Ken-Tye; Roy, Indrajit; Qu, Junle; Wang, Xiaomei

    2009-08-01

    Recently, QDs have attracted enormous attention for their potential applications ranging from physics to medicine. However, the toxicity of QDs impends its development in clinics experiment. In this work, we investigated the reproduction toxicity of QDs for in vitro oocytes matureation. The immatured oocytes of 28 day Kunming mice were harvested and cultured in vitro. And the biocompatible lysine-coated CdSe/CdS/ZnS QDs were incubated with oocytes for a certain periods. Then, each single oocyte-cumulus-complex was visualized under Leica scanning confocal microscope and rendered the 3-dimensional image. After 24 hrs, the maturation rate of oocytes decreased obviously (from 62% to 21.8%) with the concentration of QDs increasing. The 3D rendered images of oocyte-cumulus-complex showed that the most QDs distributed inside the cumulus, but no QDs entered oocytes. In summary, the results suggeste that the oocytes maturation process has high susceptibility for disturbances of QDs. The more QDs were uptaken by cumulus cells, the lower maturation rate of in vitro oocytes. We presume the QD interfere the process of oocytes maturation by dysfunctioning the cumulus cells or disturb the signal-interaction between germ cell and somatic cell. To our best knowledge, this is the first time that 3D visulization methods are used to analysize the reproduction toxicity of in vitro oocytes. The further toxicity mechanism of QDs for oocytes in vitro is undergoing investigation.

  9. InGaAs focal plane array developments and perspectives

    NASA Astrophysics Data System (ADS)

    Rouvié, A.; Coussement, J.; Huet, O.; Truffer, J. P.; Pozzi, M.; Oubensaid, E. H.; Hamard, S.; Chaffraix, V.; Costard, E.

    2015-05-01

    SWIR spectral band is an attractive domain thanks to its intrinsic properties. Close to visible wavelengths, SWIR images interpretation is made easier for field actors. Besides complementary information can be extracted from SWIR band and bring significant added value in several fields of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). Among the various new technologies able to detect SWIR wavelengths, InGaAs appears as a key technology. Initially developed for optical telecommunications, this material guaranties performances, stability and reliability and is compatible with attractive production capacity. Thanks to high quality material, very low dark current levels can be achieved at ambient temperature. Then uncooled operation can be set up, allowing compact and low power systems. Since the recent transfer of InGaAs imaging activities from III-Vlab, Sofradir provides a framework for the production activity with the manufacturing of high performances products: CACTUS320 SW. The developments towards VGA format with 15μm pixel pitch, lead today to the industrialization of a new product: SNAKE. On one side, the InGaAs detection array presents high performances in terms of dark current and quantum efficiency. On the other side, the low noise ROIC has different additional functionalities. Then this 640x512 @ 15μm sensor appears as well suited to answer the needs of a wide range of applications. In this paper, we will present the Sofradir InGaAs technology, the performances of our last product SNAKE and the perspectives of InGaAs new developments.

  10. InGaAs monolithic interconnected modules (MIM)

    SciTech Connect

    Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W. Jr.; Wilt, D.M.; Scheiman, D.; Brinker, D.; Murray, C.S.; Riley, D.

    1997-12-31

    A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Also, the use of a BSR obviates the need to use a separate filtering element. As a result, MIMs are exposed to the entire emitter output, thereby maximizing output power density. MIMs with an active area of 1 x 1-cm were comprised of 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were produced, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74-eV modules demonstrated an open-circuit voltage (Voc) of 6.158 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 842 mA/cm{sup 2}, under flashlamp testing. The 0.55-eV modules demonstrated a Voc of 4.849 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. IR reflectance measurements (i.e., {lambda} > 2 {micro}m) of these devices indicated a reflectivity of {ge} 83%. Latest electrical and optical performance results for the MIMs will be presented.

  11. Optical fiber amplifiers based on PbS/CdS QDs modified by polymers.

    PubMed

    Sun, Xiaolan; Xie, Libin; Zhou, Wei; Pang, Fufei; Wang, Tingyun; Kost, Alan R; An, Zesheng

    2013-04-01

    Optical fiber amplifiers based on PbS/CdS semiconductor quantum dots (QDs) modified by an amphiphilic polymer were demonstrated. Well-defined QDs and an amphiphilic copolymer were first prepared and the amphiphilic copolymer was then used to disperse the QDs into silica sol to allow uniform and reproducible incorporation of QDs into the silica coating of the optical fibers. QD-doped silica sol was deposited on the fusion tapered fiber coupler via dip-coating. A 1550 nm semiconductor light emitting diode as the signal source and a 980 nm laser diode as the pump source were injected into the fiber coupler simultaneously. Through evanescent wave excitation, a signal gain as high as 8 dB was obtained within the wavelength range between 1450 and 1650 nm. In addition, the optical fiber amplifiers based on PbS/CdS QDs showed enhanced thermal stability when compared to amplifiers based on PbS QDs. PMID:23571911

  12. Phase transfer of hydrophobic QDs for water-soluble and biocompatible nature through silanization

    SciTech Connect

    Yang, Ping; Zhou, Guangjun

    2011-12-15

    Graphical abstract: A facile and novel method has been developed for creating water-soluble and biocompatible CdSe/ZnS quantum dots with a small hydrodynamic diameter (less than 10 nm) via silanization. Highlights: Black-Right-Pointing-Pointer A facile and novel method has been developed for creating water-soluble and biocompatible CdSe/ZnS quantum dots (QDs) with a small hydrodynamic diameter (less than 10 nm). Black-Right-Pointing-Pointer The control of ligand exchange plays an important role to retain high fluorescence quantum yields. Black-Right-Pointing-Pointer The functional SiO{sub 2}-coated QDs were conjugated with immunoglobin G antibody by using biotin-streptavidin as linkers. Black-Right-Pointing-Pointer The QD phase transfer by silanization is a well-established method for generating biocompatible QDs. -- Abstract: A novel method has been developed for creating water-soluble and biocompatible CdSe/ZnS quantum dots (QDs) with a small hydrodynamic diameter (less than 10 nm). The silanization of the QDs was carried out by using partially hydrolyzed tetraethyl orthosilicate (TEOS) to replace organic ammine or tri-n-octylphosphine oxide on the surface of the QDs. The partially hydrolyzed 3-mercaptopropyltrimethoxysilane attached to the hydrolyzed TEOS layer on the QDs prevented the QDs from agglomeration when the QDs were transferred into water. The functional SiO{sub 2}-coated QDs were conjugated with immunoglobin G antibody by using biotin-streptavidin as linkers. The SiO{sub 2}-coated QDs exhibited the same absorption and photoluminescence (PL) spectra as those of initial QDs in organic solvents. The SiO{sub 2}-coated QDs preserved PL intensities, is colloidally stable over a wide pH range (pH 6-11). Because the mean diameter of amphiphilic polymer-coated QDs was almost 2 times of that of functional SiO{sub 2}-coated QDs, the QD phase transfer by silanization is a well-established method for generating biocompatible QDs.

  13. Buffer Layer Effects on Tandem InGaAs TPV Devices

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

    2004-01-01

    Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of

  14. Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Si, Mengwei; Gu, Jiangjiang J.; Wang, Xinwei; Shao, Jiayi; Li, Xuefei; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide D.

    2013-03-01

    InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) on the performance of these devices have been systematically studied. The 30 min 400 °C FGA (4% H2/96% N2) is found to improve the quality of the Al2O3/InGaAs interface, resulting in a subthreshold slope reduction over 20 mV/dec (from 117 mV/dec in average to 93 mV/dec). Moreover, the improvement of interface quality also has positive impact on the on-state device performance. A scaling metrics study has been carried out for FGA treated devices with channel lengths down to 20 nm, indicating excellent gate electrostatic control. With the FGA passivation and the ultra-thin nanowire structure, InGaAs MOSFETs are promising for future logic applications.

  15. The toxicity and invasive effects of QDs on mung bean development

    NASA Astrophysics Data System (ADS)

    Zhai, Peng; Wang, Xiaomei; Wang, Ruhua; Huang, Xuan; Feng, Gang; Lin, Guimiao; Chen, Qiang; Xu, Gaixia; Chen, Danni

    2014-09-01

    Objective: Nowadays, the nanomaterials have been applied in every aspects of our life, including cosmetics, fresh-keeping, antisepsis and medicines. However, we know little about the toxic effects of nanoparticles towards plants. In this thesis, we synthesized quantum dots (QDs), and then toxicity and invasive effects of QDs for mung beans were investigated. Methods: We synthesised red CdTe QDs in water sphase with L-Cystein stabilizers, then prepared different concentration of QDs solution to cultivate mung bean plant, the radical length of mung beans was measured after four days every day, after 7 days, the distribution of QDs in mung bean plant was recorded under the microscopic. Results: The result showed the QDs inhibited the growth of mung beans, the higher the concentration of QDs was, the greater the inhibition effect was. After 7 days, the radicle average lengths of mung beans in different concentrations of QDs solution - blank 0.1μmol/L 0.2μmol/L 0.5 μmol/L 1 μmol/L - were 19.350+/- 0.427, 14.050+/- 0.879, 10.525+/- 0.554, 7.250+/- 0.522, 7.650+/- 0.229. The QDs mostly adhered onto the root surface and hairs. Conclusion: In conclusion, the QDs synthesized with L-cystein have effects on the growth of mung beans. However, it is necessary to do more experiments to confirm the mechanism of the toxicity effect of QDs on plants.

  16. Electronic states and intraband terahertz optical transitions in InGaAs quantum rods

    NASA Astrophysics Data System (ADS)

    Prodanović, Nikola; Vukmirović, Nenad; Indjin, Dragan; Ikonić, Zoran; Harrison, Paul

    2012-04-01

    Strain-dependent eight-band k .p method is used to analyze the electronic structure and intraband optical transitions in self-assembled InGaAs quantum rods in the terahertz range. The calculation of absorption spectra for the growth- and in-plane-polarized radiation shows some similarities to those of quantum well and single quantum dot structures, augmented with contribution from transitions between the dot and quantum well states. The influence of rod height on the electronic structure and the intraband absorption spectra is also investigated. It is found that the energy of maximal terahertz absorption can be tailored by the rod height for both in-plane and in-growth polarized radiation.

  17. Analysis of Carrier Recombination Processes in 0.6 eV InGaAs Epitaxial Materials for Thermophotovoltaic Devices

    SciTech Connect

    D Donetsky; F Newman; M Dashiell

    2006-10-30

    Minority carrier lifetime was measured by time-resolved photoluminescence (TRPL) method in sets of p-type and n-type InGaAs double heterostructures (DH) moderately doped with Zn and Te, respectively. Contributions of the radiative and non-radiative recombination terms were separated by fitting experimental data to temperature dependences of the radiative term. The latter was modeled with measured fundamental absorption spectrum and the temperature dependence of the photon recycling effect was taken into account. Different temperature dependences of radiative terms for electron and hole materials were obtained. It was concluded that in 0.6 eV Te-doped InGaAs structures the radiative recombination controls the hole lifetime at liquid nitrogen temperatures, while Auger recombination dominates at room and above room temperatures. In similar 0.6 eV InGaAs with Zn-doped active regions Shockley-Read-Hall (SRH) recombination was found dominant in a wide temperature range from liquid nitrogen to above-room temperatures. Rapid decrease of electron lifetime with decrease of excess carrier concentration was observed and attributed to recombination through partially-ionized deep donor centers. The obtained data allows for more adequate modeling of the performance and design optimization of narrow-gap photonic devices based on InGaAs Indium-rich compounds.

  18. New developments on InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Coussement, J.; Rouvié, A.; Oubensaid, E. H.; Huet, O.; Hamard, S.; Truffer, J.-P.; Pozzi, M.; Maillart, P.; Reibel, Y.; Costard, E.; Billon-Lanfrey, D.

    2014-06-01

    SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. The recent transfer of imagery activities from III-VLab to Sofradir provides a framework for the production activity with the manufacturing of high performances products: CACTUS320 SW and CACTUS640 SW. The developments, begun at III-Vlab towards VGA format with 15μm pixel pitch, lead today to the industrialization of a new product: SNAKE SW. On one side, the InGaAs detection array presents high performances in terms of dark current and quantum efficiency. On the other side, the low noise ROIC has different additional functionalities. Then this 640×512 @ 15μm module appears as well suited to answer the needs of a wide range of applications. In this paper, we will present the Sofradir InGaAs technology, some performances optimization and the last developments leading to SNAKE SW.

  19. One-pot microwave assisted approach for synthesis of CdSe/CdS core-shell quantum dots (QDs) and investigating optical properties

    NASA Astrophysics Data System (ADS)

    Molaei, M.; Bardsiri, F. Salari; Bahador, A. R.; Karimipour, M.

    2016-02-01

    In this work, CdSe QDs were synthesized using a microwave assisted method and chemical reaction between NaHSe, CdSO4 at the presence of TGA as capping molecule. Thereafter without CdSe extraction, CdS shell was grown subsequently around CdSe cores by a reaction based on the heat sensitivity of Na2S2O3 dissociation. Synthesized QDs were characterized by means of X-ray diffraction spectroscopy (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), UV-Vis and photoluminescence (PL) spectroscopy. All of these analyzes confirmed formation of CdSe QDs and successfully growth of CdS shell on surface of CdSe to forming CdSe/CdS core-shell structure.

  20. Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells

    SciTech Connect

    Cilibrizzi, Pasquale; Askitopoulos, Alexis Silva, Matteo; Lagoudakis, Pavlos G.; Bastiman, Faebian; Clarke, Edmund; Zajac, Joanna M.; Langbein, Wolfgang

    2014-11-10

    The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs{sub 0.98}P{sub 0.02} microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates, providing a platform for on chip quantum simulations.

  1. Room temperature green to red electroluminescence from (Al,Ga)As/GaP QDs and QWs

    NASA Astrophysics Data System (ADS)

    Golz, Christian; Dadgostar, Shabnam; Masselink, W. Ted; Hatami, Fariba

    2016-03-01

    We present the growth, fabrication, and characterization of light-emitting diodes based on (Al,Ga)As quantum wells and dots embedded in a p-n GaP structure. Samples were grown on Sulphur-doped GaP (001) substrate using gas-source molecular beam epitaxy. The structures include either GaAs quantum structures with nominal coverage between 1.2 and 3.6 monolayers or Al0.3Ga0.7As quantum wells. For structures with GaAs layer thicker than 1.5 monolayers the 3.6% lattice mismatch in the materials system results in formation of quantum dots via Stranski-Krastanow growth mode with areal density of about 8×1010 cm-2. The atomic-force and transmission-electron microscopy show that with increasing coverage of GaAs from 1.8 to 3.6 monolayers the average lateral size and height of dots change in the range of 17-34 nm and 0.9-2 nm, respectively. The diode structures emit light from the red to the green spectral range up to room temperature. The GaAs/GaP QDs show electroluminescence between 1.8 eV and 2 eV, whereas the Al0.3Ga0.7As quantum wells emit light between 2 eV and 2.2 eV.

  2. Suppressed blinking behavior of CdSe/CdS QDs by polymer coating.

    PubMed

    Zhang, Aidi; Bian, Yannan; Wang, Jinjie; Chen, Kuiyong; Dong, Chaoqing; Ren, Jicun

    2016-03-01

    Semiconductor quantum dots (QDs) are very important fluorescent nanocrystals with excellent optical properties. However, QDs, at the single-particle level, show severe fluorescence intermittency (or blinking) on a wide time scale from milliseconds to minutes, which limits certain optical and biological applications. Generally, blinking behavior of QDs strongly depends on their surface state and surrounding environment. Therefore, current blinking suppression approaches are mostly focused on the introduction of an inorganic shell and organic small molecule compounds. In this study, we described a "bottom up" approach for the synthesis of CdSe/CdS/polymer core/shell/shell QDs via the in situ one-pot polymerization approach in order to control the blinking behavior of QDs. Three monomers (dithiothreitol (DTT), phenylenediamine (PDA), and hexamethylenediamine (HDA)) were respectively used to polymerize with hexachlorocyclotriphosphazene (HCCP), and then the polyphosphazene polymers were obtained with cyclotriphosphazene as the basic macromolecular backbone. By regulating the molar ratios of the activated comonomers, we can control the blinking behavior of CdSe/CdS/polymer QDs. Under the optimal conditions, the percentage of "non-blinking" CdSe/CdS/polymer QDs (the "on time" fraction > 99% of the overall observation time) was up to 78%. The suppression mechanism was attributed to the efficient passivation of QD surface traps by the sulfhydryl or phenyl groups in the polyphosphazene polymers. PMID:26865498

  3. Exciton delocalization and hot hole extraction in CdSe QDs and CdSe/ZnS type 1 core shell QDs sensitized with newly synthesized thiols

    NASA Astrophysics Data System (ADS)

    Singhal, Pallavi; Ghorpade, Prashant V.; Shankarling, Ganapati S.; Singhal, Nancy; Jha, Sanjay K.; Tripathi, Raj M.; Ghosh, Hirendra N.

    2016-01-01

    The present work describes ultrafast thermalized and hot hole transfer processes from photo-excited CdSe quantum dots (QDs) and CdSe/ZnS core-shell QDs (CSQDs) to newly synthesized thiols. Three thiols namely 2-mercapto-N-phenylacetamide (AAT), 3-mercapto-N-phenylpropanamide (APT) and 3-mercapto-N-(4-methoxyphenyl) propanamide (ADPT) were synthesized and their interaction with both CdSe QDs and CdSe/ZnS CSQDs was monitored. Steady state absorption study suggests the exciton delocalization from CdSe QDs in the presence of the thiols. However similar features were not observed in the presence of a ZnS shell over a CdSe core, instead a broadening in the excitonic peak was observed with both APT and ADPT but not with AAT. This exciton delocalization and broadening in the excitonic peak was also confirmed by ultrafast transient absorption studies. Steady state and time resolved emission studies show hole transfer from photo-excited QDs and CSQDs to the thiols. A signature of hot hole extraction was observed in transient absorption studies which was confirmed by fluorescence upconversion studies. Both hot and thermalized hole transfer rates from CdSe QDs and CdSe/ZnS CSQDs to the thiols were determined using the fluorescence up-conversion technique. Experiments with different ZnS shell thicknesses have been carried out which suggest that hole transfer is possible till 2.5 monolayer of the ZnS shell. To the best of our knowledge we are reporting for the first time the extraction of hot holes from CdSe/ZnS type I CSQDs by a molecular adsorbate.The present work describes ultrafast thermalized and hot hole transfer processes from photo-excited CdSe quantum dots (QDs) and CdSe/ZnS core-shell QDs (CSQDs) to newly synthesized thiols. Three thiols namely 2-mercapto-N-phenylacetamide (AAT), 3-mercapto-N-phenylpropanamide (APT) and 3-mercapto-N-(4-methoxyphenyl) propanamide (ADPT) were synthesized and their interaction with both CdSe QDs and CdSe/ZnS CSQDs was monitored. Steady

  4. Exciton delocalization and hot hole extraction in CdSe QDs and CdSe/ZnS type 1 core shell QDs sensitized with newly synthesized thiols.

    PubMed

    Singhal, Pallavi; Ghorpade, Prashant V; Shankarling, Ganapati S; Singhal, Nancy; Jha, Sanjay K; Tripathi, Raj M; Ghosh, Hirendra N

    2016-01-28

    The present work describes ultrafast thermalized and hot hole transfer processes from photo-excited CdSe quantum dots (QDs) and CdSe/ZnS core-shell QDs (CSQDs) to newly synthesized thiols. Three thiols namely 2-mercapto-N-phenylacetamide (AAT), 3-mercapto-N-phenylpropanamide (APT) and 3-mercapto-N-(4-methoxyphenyl) propanamide (ADPT) were synthesized and their interaction with both CdSe QDs and CdSe/ZnS CSQDs was monitored. Steady state absorption study suggests the exciton delocalization from CdSe QDs in the presence of the thiols. However similar features were not observed in the presence of a ZnS shell over a CdSe core, instead a broadening in the excitonic peak was observed with both APT and ADPT but not with AAT. This exciton delocalization and broadening in the excitonic peak was also confirmed by ultrafast transient absorption studies. Steady state and time resolved emission studies show hole transfer from photo-excited QDs and CSQDs to the thiols. A signature of hot hole extraction was observed in transient absorption studies which was confirmed by fluorescence upconversion studies. Both hot and thermalized hole transfer rates from CdSe QDs and CdSe/ZnS CSQDs to the thiols were determined using the fluorescence up-conversion technique. Experiments with different ZnS shell thicknesses have been carried out which suggest that hole transfer is possible till 2.5 monolayer of the ZnS shell. To the best of our knowledge we are reporting for the first time the extraction of hot holes from CdSe/ZnS type I CSQDs by a molecular adsorbate. PMID:26698125

  5. Enhancement of singlet oxygen production based on FRET between Coumarin tri-compound and CdSe/ZnS QDs

    NASA Astrophysics Data System (ADS)

    Duong, Hong Dinh; Lee, Jee Won; Rhee, Jong Il

    2014-08-01

    The compatibility between coumarin-derived dendrimer (CdD)-captured silica particles (SiCdDs) and watersoluble CdSe/ZnS quantum dots (QDs) in the FRET process improved the excited state of QDs in the reaction of singlet oxygen production under LED irradiation. Sol-gel GA was successfully used to improve the binding between SiCdDs and QDs. Singlet oxygen production using QDs coated with SiCdDs through sol-gel GA was enhanced by about 80 % compared to that achieved using QDs only. The single oxygen produced by the QDs, the QDs/GA-SiCdDs complexes and the SiCdDs/GA-QDs complexes in this study could be used in the treatment of HeLa cells.

  6. Multijunction InGaAs thermophotovoltaic power converter

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven

    1996-01-01

    The experimental performance of a multijunction monolithic lattice-matched 0.74 eV InGaAs thermophotovoltaic (TPV) power converter under 980 C blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 cm(exp 2) chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. The power efficiency of this TPV device is 16% for that part of the blackbody spectrum above the material bandgap. The device is shown to deliver about 1 watt of output power when driven with enough light. This is the first report of such a multijunction TPV device. This is not a traditional tandem cell in which the junctions are stacked vertically. Eight 1 mm long by 1 cm wide junctions are laterally connected across the device area. This multijunction design has the potential for lower I(exp 2)R power loss since the smaller PN junction area limits the current to one eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(exp 2)R loss, analogous to the way power utilities avoid I(exp 2)R loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

  7. Performance limitations of InGaAs photodiodes

    NASA Astrophysics Data System (ADS)

    Rogalski, Antoni

    1999-04-01

    The carrier lifetimes in InxGa1-xAs (InGaAs) ternary alloys for radiative and Auger recombination are calculated for temperature 300 K in the short wavelength range 1.5 < (lambda) < 3.7 micrometers . Due to photon recycling, an order of magnitude enhancements in the radiative lifetimes over those obtained from the standard van Roosbroeck and Shockley expression, has been assumed. The possible Auger recombination mechanisms (CHCC, CHLH and CHSH processes) in direct-gap semiconductors are investigated. In n-type and p-type materials the carrier lifetimes are similar. It is clearly shown that in the range of low doping concentration, the carrier lifetime is determined by radiative recombination. For n-type material in the range of higher doping level, a competition between radiative and CHCC processes take place; instead for p-type materials the most effective channel of Auger mechanisms is the CHSH process. A special attention has been put on discussion of the carrier lifetimes in both types of In0.53Ga0.47As materials. Consequence of enhancement in the radiative lifetime leads to higher ultimate performance of photodiodes. The performance (RoA product) of heterostructure InGaAs photovoltaic devices are analyzed. Both the n-on-p (with p-type active region) as well as p-on- n (with n-type active region) are considered. Finally, theoretically predicted performance of InGaAs photodiodes are compared with experimental data reported by other authors.

  8. Aqueous synthesis and characterization of Ni, Zn co-doped CdSe QDs

    NASA Astrophysics Data System (ADS)

    Thirugnanam, N.; Govindarajan, D.

    2016-01-01

    Ni, Zn co-doped CdSe quantum dots (QDs) were synthesized by chemical precipitation method through aqueous route. The prepared QDs were characterized by X-ray diffraction (XRD) technique, UV-Vis absorption spectroscopy, photoluminescence (PL) spectroscopy and high resolution transmission electron microscopy (HRTEM). XRD technique results indicate that the prepared samples have a zinc blende cubic phase. From UV-Vis absorption spectroscopy technique, the prepared samples were blue shifted with respect to their bulk counter part due to quantum confinement effect. Among different doping ratios examined, a maximum PL emission intensity was observed for CdSe:Ni(1 %):Zn(1 %) QDs. HRTEM pictures show that the prepared QDs were in spherical shape.

  9. Suppressed blinking behavior of CdSe/CdS QDs by polymer coating

    NASA Astrophysics Data System (ADS)

    Zhang, Aidi; Bian, Yannan; Wang, Jinjie; Chen, Kuiyong; Dong, Chaoqing; Ren, Jicun

    2016-02-01

    Semiconductor quantum dots (QDs) are very important fluorescent nanocrystals with excellent optical properties. However, QDs, at the single-particle level, show severe fluorescence intermittency (or blinking) on a wide time scale from milliseconds to minutes, which limits certain optical and biological applications. Generally, blinking behavior of QDs strongly depends on their surface state and surrounding environment. Therefore, current blinking suppression approaches are mostly focused on the introduction of an inorganic shell and organic small molecule compounds. In this study, we described a ``bottom up'' approach for the synthesis of CdSe/CdS/polymer core/shell/shell QDs via the in situ one-pot polymerization approach in order to control the blinking behavior of QDs. Three monomers (dithiothreitol (DTT), phenylenediamine (PDA), and hexamethylenediamine (HDA)) were respectively used to polymerize with hexachlorocyclotriphosphazene (HCCP), and then the polyphosphazene polymers were obtained with cyclotriphosphazene as the basic macromolecular backbone. By regulating the molar ratios of the activated comonomers, we can control the blinking behavior of CdSe/CdS/polymer QDs. Under the optimal conditions, the percentage of ``non-blinking'' CdSe/CdS/polymer QDs (the ``on time'' fraction > 99% of the overall observation time) was up to 78%. The suppression mechanism was attributed to the efficient passivation of QD surface traps by the sulfhydryl or phenyl groups in the polyphosphazene polymers.Semiconductor quantum dots (QDs) are very important fluorescent nanocrystals with excellent optical properties. However, QDs, at the single-particle level, show severe fluorescence intermittency (or blinking) on a wide time scale from milliseconds to minutes, which limits certain optical and biological applications. Generally, blinking behavior of QDs strongly depends on their surface state and surrounding environment. Therefore, current blinking suppression approaches are

  10. InGaAs triangular barrier photodiodes for high-responsivity detection of near-infrared light

    NASA Astrophysics Data System (ADS)

    Sugimura, Kazuya; Ohmori, Masato; Noda, Takeshi; Kojima, Tomoya; Kado, Sakunari; Vitushinskiy, Pavel; Iwata, Naotaka; Sakaki, Hiroyuki

    2016-06-01

    InGaAs triangular barrier (TB) structures of various barrier thicknesses have been formed on InP substrates. With them, we have fabricated TB photodiodes that yield a very high responsivity of 2.3 × 104 A/W at 100 K for the 1312 nm light of 320 fW power. By passivating the diode surface with polyimide, the dark current has been markedly reduced. Diodes with thicker barriers show higher sensitivity and responsivity, reflecting the enhancement of the barrier lowering effect by photogenerated holes.

  11. The Invasion and Reproductive Toxicity of QDs-Transferrin Bioconjugates on Preantral Follicle in vitro

    PubMed Central

    Xu, Gaixia; Lin, Suxia; Law, Wing-Cheung; Roy, Indrajit; Lin, Xiaotan; Mei, Shujiang; Ma, Hanwu; Chen, Siping; Niu, Hanben; Wang, Xiaomei

    2012-01-01

    The toxicity of QD has been extensively studied over the past decade. However, the potential toxicity of QDs impedes its use for clinical research. In this work, we established a preantral follicle in vitro culture system to investigate the effects of QD-Transferrin (QDs-Tf) bioconjugates on follicle development and oocyte maturation. The preantral follicles were cultured and exposed to CdTe/ZnTe QDs-Tf bioconjugates with various concentrations and the reproductive toxicity was assessed at different time points post-treatment. The invasion of QDs-Tf for oocytes was verified by laser scanning confocal microscope. Steroid production was evaluated by immunoassay. C-band Giemsa staining was performed to observe the chromosome abnormality of oocytes. The results showed that the QDs-Tf bioconjugates could permeate into granulosa cells and theca cells, but not into oocyte. There are no obvious changes of oocyte diameter, the mucification of cumulus-oocyte-complexes and the occurrence of aneulpoidy as compared with the control group. However, delay in the antrum formation and decrease in the ratio of oocytes with first polar body were observed in QDs-Tf-treated groups. The matured oocytes with first polar body decreased significantly by ~16% (from 79.6±10 % to 63±2.9 %) when the concentration of QDs-Tf bioconjugates exceeded 2.89 nmol·L-1 (P < 0.05). Our results implied that the CdTe/ZnTe QDs-Tf bioconjugates were reproductive toxic for follicle development, and thus also revealed that this in vitro culture system of preantral follicle is a highly sensitive tool for study on the reproductive toxicity of nanoparticles. PMID:22916073

  12. Numerical modeling of extended short wave infrared InGaAs focal plane arrays

    NASA Astrophysics Data System (ADS)

    Glasmann, Andreu; Wen, Hanqing; Bellotti, Enrico

    2016-05-01

    Indium gallium arsenide (In1-xGaxAs) is an ideal material choice for short wave infrared (SWIR) imaging due to its low dark current and excellent collection efficiency. By increasing the indium composition from 53% to 83%, it is possible to decrease the energy gap from 0.74 eV to 0.47 eV and consequently increase the cutoff wavelength from 1.7 μm to 2.63 μm for extended short wavelength (ESWIR) sensing. In this work, we apply our well-established numerical modeling methodology to the ESWIR InGaAs system to determine the intrinsic performance of pixel detectors. Furthermore, we investigate the effects of different buffer/cap materials. To accomplish this, we have developed composition-dependent models for In1-xGaxAs, In1-xAlxAs, and InAs1-y Py. Using a Green's function formalism, we calculate the intrinsic recombination coefficients (Auger, radiative) to model the diffusion-limited behavior of the absorbing layer under ideal conditions. Our simulations indicate that, for a given total thickness of the buffer and absorbing layer, structures utilizing a linearly graded small-gap InGaAs buffer will produce two orders of magnitude more dark current than those with a wide gap, such as InAlAs or InAsP. Furthermore, when compared with experimental results for ESWIR photodiodes and arrays, we estimate that there is still a 1.5x magnitude of reduction in dark current before reaching diffusion-limited behavior.

  13. Study on 512×128 pixels InGaAs near infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Li, Xue; Tang, Hengjing; Huang, Songlei; Shao, Xiumei; Li, Tao; Huang, Zhangcheng; Gong, Haimei

    2014-10-01

    It is well known that In0.53Ga0.47As epitaxial material is lattice-matched to InP substrate corresponding to the wavelength from 0.9μm to 1.7μm, which results to high quality material and good device characteristics at room temperature. In order to develop the near infrared multi-spectral imaging, 512×128 pixels InGaAs Near Infrared Focal Plane Arrays (FPAs) were studied. The n-InP/i-InGaAs/n-InP double hereto-structure epitaxial material was grown by MBE. The 512×128 back-illuminated planar InGaAs detector arrays were fabricated, including the improvement of passivation film, by grooving the diffusion masking layer, the P type electrode layer, In bump condition and so on. The photo-sensitive region has the diffusion area of 23×23μm2 and pixel pitch of 30×30μm2 . The 512×128 detector arrays were individually hybridized on readout integrated circuit(ROIC) by Indium bump based on flip-chip process to make focal plane arrays (FPAs). The ROIC is based on a capacitive trans-impedance amplifier with correlated double sampling and integrated while readout (IWR) mode with high readout velocity of every pixel resulting in low readout noise and high frame frequency. The average peak detectivity and the response non-uniformity of the FPAs are 1.63×1012 cmHz1/2/W and 5.9%, respectively. The power dissipation and frame frequency of the FPAs are about 180mW and 400Hz, respectively.

  14. Multijunction InGaAs thermophotovoltaic power converter

    SciTech Connect

    Wojtczuk, S.; Parodos, T.

    1995-10-01

    The experimental performance of a multijunction monolithic In(0.53)Ga(0.47)As power converter under blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 sq cm chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. This is the first report of such a multijunction TPV. This is not a traditional tandem cell in which the junctions are stacked vertically. The junctions are each about 1mm long by 1 cm wide and are laterally connected across the 1 sq cm device area. This multijunction design has the potential for lower I(sup 2)R power loss since the smaller PN junction area limits the current to one-eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(sup 2)R loss, analogous to the way power utilities avoid I(sup 2)R loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

  15. Multijunction InGaAs thermophotovoltaic power converter

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Parodos, Themis

    1995-01-01

    The experimental performance of a multijunction monolithic In(0.53)Ga(0. 47)As power converter under blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 sq cm chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. This is the first report of such a multijunction TPV. This is not a traditional tandem cell in which the junctions are stacked vertically. The junctions are each about 1mm long by 1 cm wide and are laterally connected across the 1 sq cm device area. This multijunction design has the potential for lower I(sup 2)R power loss since the smaller PN junction area limits the current to one-eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(sup 2)R loss, analogous to the way power utilities avoid I(sup 2)P loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

  16. Efficient infrared luminescence of Er2S3/ZnS core/shell quantum dots and IR QDs-lED.

    PubMed

    Li, Bo; Zhang, Xiaosong; Ji, Ting; Zhang, Gaofeng; Li, Lan

    2014-06-01

    We have synthesized Er2S3/ZnS core/shell QDs by employing ErSt3, ZnSt2, and sulfur as precursors via a hot solution phase chemistry using a nucleation-doping strategy. X-ray diffraction (XRD), transmission electron microscope (TEM) and photoluminescence (PL) spectra were used to characterize the structure, morphology and luminescence properties of Er2S3/ZnS core/shell QDs. Moreover, the influence of overcoating temperatures on the infrared luminescence properties of QDs was investigated. PL spectra show that the emission intensity from the 4I13/2 --> 4I15/2 transition of Er3+ strongly increases with increasing overcoating temperatures, which was interpreted by the enhancing diffusion of Er3+ ions. IR-LEDs were fabricated combining commercial red GaAs LEDs with Er2S3/ZnS QDs, and luminescence properties of the IR-LED have been investigated. PMID:24738369

  17. Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials

    NASA Astrophysics Data System (ADS)

    Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav

    2016-01-01

    Electron mobility is investigated in sub-20 nm-thick InGaAs channels, sandwiched between different gate oxides (SiO2, Al2O3, HfO2) and InP as substrate, using physics-based numerical modeling. Effects of body thickness downscaling to 2 nm, different gate oxides, and surface orientation [(1 0 0) and (1 1 1)] are examined by including all electron valleys and all relevant scattering mechanisms. We report that ultra-thin (1 1 1) Al2O3-InGaAs-InP devices offer greater electron mobility than (1 0 0) devices even in the extremely-thin channels. Furthermore, ultra-thin (1 0 0) InGaAs devices outperform SOI in terms of electron mobility for body thicknesses above ∼4 nm, while (1 1 1) InGaAs channels are superior to SOI for all body thickness values above ∼3 nm. The study of different gate oxides indicates that HfO2 is the optimum gate dielectric regardless of device orientation, offering a mobility improvement of up to 124% for (1 1 1) and 149% for (1 0 0) surface orientation, when compared to the initial Al2O3-InGaAs-InP structure. The (1 1 1) orientation offers improvement over (1 0 0) device irrespective of the body thickness and gate oxide material, with the highest difference reported for SiO2, followed by Al2O3 and HfO2.

  18. Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

    PubMed Central

    2010-01-01

    Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved. PMID:20676193

  19. Targeted near-IR QDs-loaded micelles for cancer therapy and imaging.

    PubMed

    Nurunnabi, Md; Cho, Kwang Jae; Choi, Joon Sig; Huh, Kang Moo; Lee, Yong-kyu

    2010-07-01

    The use of water-soluble, functionalized quantum dots (QDs) that are highly stable against oxidation for biological and biomedical applications is currently one of the fastest growing fields of nanotechnology. Polymer-based nanoparticles are now widely used for drug delivery and targeted therapy. We modified the surface of near Infrared QDs by the solid dispersion method using PEG-PCDA and PCDA-Herceptin conjugates to demonstrate water-solubility and target-specific properties. Upon UV irradiation, QD cores located within nanoprobes were further stabilized by intramicellar cross-linking between neighboring PCDA-Herceptin moieties. These cross-linked nanoprobes showed higher stability and less toxicity. Near-IR QDs-loaded micelles were spherical with diameters of around 130-150 nm. The anti-tumor effect of near-IR QDs-loaded micelles against MDA-MB-231 tumors was remarkably better than that of control. Mice treated with the near-IR QDs-loaded micelles had a tumor volume of about 285 mm(3), indicating shrinkage in initial tumor volume and inhibition of tumor growth by 77.3% compared to that of control group (saline injection). In addition, near-IR QDs-loaded micelles were injected intravenously into tumor-bearing nude mice for simultaneous tumor therapy and imaging. We observed that the targeted near-IR QDs-loaded micelles distributed rapidly throughout the animal body including the tumor in real time. These multi-functional nanoprobes could therefore be used for both active and passive targeting, imaging and treatment of cancers in the early stage. PMID:20409581

  20. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    SciTech Connect

    Dennis, Allison M.; Mangum, Benjamin D.; Piryatinski, Andrei; Park, Young-Shin; Htoon, Han; Hollingsworth, Jennifer A.

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  1. Formation of self-assembled InGaAs quantum dot arrays aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs

    SciTech Connect

    Akiyama, Y.; Sakaki, H.

    2006-10-30

    Dense and highly ordered arrays of self-assembled InGaAs quantum dots are formed by molecular beam epitaxy along multiatomic steps on vicinal (111)B GaAs. This unique structure has been synthesized by depositing a nominally 3-nm-thick In{sub 0.3}Ga{sub 0.7}As layer onto a periodically corrugated surface prepared on a GaAs substrate tilted 8.5 deg. from (111)B. Each dot is typically 30-50 nm in lateral size and about 4 nm in height. Accumulation and release processes of strains in InGaAs layers deposited on stepped surfaces are discussed to suggest a possible mechanism for the aligned dot formation.

  2. Comparative optical study of epitaxial InGaAs quantum rods grown with As{sub 2} and As{sub 4} sources

    SciTech Connect

    Nedzinskas, Ramūnas; Čechavičius, Bronislovas; Kavaliauskas, Julius; Karpus, Vytautas; Valušis, Gintaras; Li, Lianhe; Khanna, Suraj P.; Linfield, Edmund H.

    2013-12-04

    Photoreflectance and photoluminescence (PL) spectroscopies are used to examine the optical properties and electronic structure of InGaAs quantum rods (QRs), embedded within InGaAs quantum well (QW). The nanostructures studied were grown by molecular beam epitaxy using As{sub 2} or As{sub 4} sources. The impact of As source on spectral features associated with interband optical transitions in the QRs and the surrounding QW are demonstrated. A red shift of the QR- and a blue shift of the QW-related optical transitions, along with a significant increase in PL intensity, have been observed if an As{sub 4} source is used. The changes in optical properties are attributed mainly to carrier confinement effects caused by variation of In content contrast between the QR material and the surrounding well.

  3. Indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs stacks during anneal at different ambient conditions

    SciTech Connect

    Krylov, Igor; Winter, Roy; Ritter, Dan; Eizenberg, Moshe

    2014-06-16

    Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al{sub 2}O{sub 3} layer following vacuum and O{sub 2} anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al{sub 2}O{sub 3}/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.

  4. Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe

    NASA Astrophysics Data System (ADS)

    Wen, Hanqing; Bellotti, Enrico

    2016-05-01

    Intrinsic carrier lifetime due to radiative and Auger recombination in HgCdTe and strained InGaAs has been computed in the extended short-wavelength infrared (ESWIR) spectrum from 1.7 μm to 2.7 μm. Using the Green's function theory, both direct and phonon-assisted indirect Auger recombination rates as well as the radiative recombination rates are calculated for different cutoff wavelengths at 300 K with full band structures of the materials. In order to properly model the full band structures of strained InGaAs, an empirical pseudo-potential model for the alloy is fitted using the virtual crystal approximation with spin-orbit coupling included. The results showed that for InxGa1-xAs grown on InP substrate, the compressive strain, which presents in the film when the cutoff wavelength is longer than 1.7 μm, leads to decrease of Auger recombination rate and increase of radiative recombination rate. Since the dominant intrinsic recombination mechanism in this spectral range is radiative recombination, the overall intrinsic carrier lifetime in the strained InGaAs alloys is shorter than that in the relaxed material. When compared to the relaxed HgCdTe, both relaxed and compressively strained InGaAs alloys show shorter intrinsic carrier lifetime at the same cutoff wavelength in room temperature which confirms the potential advantage of HgCdTe as wide-band infrared detector material. While HgCdTe offers superior performance, ultimately the material of choice for ESWIR application will also depend on material quality and cost.

  5. Dual switchable CRET-induced luminescence of CdSe/ZnS quantum dots (QDs) by the hemin/G-quadruplex-bridged aggregation and deaggregation of two-sized QDs.

    PubMed

    Hu, Lianzhe; Liu, Xiaoqing; Cecconello, Alessandro; Willner, Itamar

    2014-10-01

    The hemin/G-quadruplex-catalyzed generation of chemiluminescence through the oxidation of luminol by H2O2 stimulates the chemiluminescence resonance energy transfer (CRET) to CdSe/ZnS quantum dots (QDs), resulting in the luminescence of the QDs. By the cyclic K(+)-ion-induced formation of the hemin/G-quadruplex linked to the QDs, and the separation of the G-quadruplex in the presence of 18-crown-6-ether, the ON-OFF switchable CRET-induced luminescence of the QDs is demonstrated. QDs were modified with nucleic acids consisting of the G-quadruplex subunits sequences and of programmed domains that can be cross-linked through hybridization, using an auxiliary scaffold. In the presence of K(+)-ions, the QDs aggregate through the cooperative stabilization of K(+)-ion-stabilized G-quadruplex bridges and duplex domains between the auxiliary scaffold and the nucleic acids associated with the QDs. In the presence of 18-crown-6-ether, the K(+)-ions are eliminated from the G-quadruplex units, leading to the separation of the aggregated QDs. By the cyclic treatment of the QDs with K(+)-ions/18-crown-6-ether, the reversible aggregation/deaggregation of the QDs is demonstrated. The incorporation of hemin into the K(+)-ion-stabilized G-quadruplex leads to the ON-OFF switchable CRET-stimulated luminescence of the QDs. By the mixing of appropriately modified two-sized QDs, emitting at 540 and 610 nm, the dual ON-OFF activation of the luminescence of the QDs is demonstrated. PMID:25216118

  6. Visualization of hormone binding proteins in vivo based on Mn-doped CdTe QDs

    NASA Astrophysics Data System (ADS)

    Liu, Fang fei; Yu, Ying; Lin, Bi xia; Hu, Xiao gang; Cao, Yu juan; Wu, Jian zhong

    2014-10-01

    Daminozide (B9) is a growth inhibitor with important regulatory roles in plant growth and development. Locating and quantifying B9-binding proteins in plant tissues will assist in investigating the mechanism behind the signal transduction of B9. In this study, red fluorescent Mn-doped CdTe quantum dots (CdTeMn QDs) were synthesized by a high-temperature hydrothermal process. Since CdTeMn QDs possess a maximum fluorescence emission peak at 610 nm, their fluorescence properties are more stable than those of CdTe QDs. A B9-CdTeMn probe was synthesized by coupling B9 with CdTeMn QDs. The fluorescence intensity of the probe is double that of CdTeMn QDs; its fluorescence stability is also superior under different ambient conditions. The probe retains the biological activity of B9 and is unaffected by interference from the green fluorescent protein present in plants. Therefore, we used this probe to label B9-binding proteins selectively in root tissue sections of mung bean seedlings. These proteins were observed predominantly on the surfaces of the cell membranes of the cortex and epidermal parenchyma.

  7. Photochemical properties and shape evolution of CdSe QDs in a non-injection reaction

    NASA Astrophysics Data System (ADS)

    Park, Eunjung; Ryu, Jiyoung; Choi, Youngseon; Hwang, Kwang-Jin; Song, Rita

    2013-04-01

    Highly monodispersed CdSe quantum dots (QDs) were prepared without an injection procedure. A series of Cd salts of long chain fatty acids, including Cd-myristate (C14), Cd-palmitate (C16) and Cd-stearate (C18) was prepared, and all metallic precursors and surfactants were mixed together followed by increasing the temperature in a controlled manner. The reaction resulted in highly monodisperse and bright zinc blende QDs. In addition, the effects of specific ligands which have been known to lead anisotropic growth of the nanocrystals in the injection method were investigated. The use of alkyl phosphonic acid and alkyl amine was found to produce extremely monodisperse CdSe QDs with a high quantum yield. This procedure was proven to be able to yield a large quantity of zinc blende CdSe QDs (2 g) in a one-pot reaction. The use of a controlled amount of tetradecylphosphonic acid and octadecylamine resulted in tetrapod- and match-shaped QDs, the first reported by a non-injection method. These results clearly demonstrate that appropriate combination of precursors can provide high quality of CdSe nanocrystals in terms of quantum yield, monodispersity and shape control by a non-injection method.

  8. [Toxic effects of CdSe/ZnS QDs to zebrafish embryos].

    PubMed

    Chen, Mu-Fei; Huang, Cheng-Zhi; Pu, De-Yong; Zheng, Chao-Yi; Yuan, Kai-Mi; Jin, Xing-Xing; Zhang, Yao-Guang; Jin, Li

    2015-02-01

    The toxic effects of CdSe/ZnS QDs on zebrafish (Danio rerio) embryos at different developmental stages were investigated in this study. The voluntary movement frequency, body length, hatching rate, mortality and malformation rate, SOD activities, MDA contents, mRNA expression of metallothionein (MT) and heat stress protein 70 (Hsp70) were used as indicators. The results showed that the EC50 was 316.994 nmol x L(-1) for zebrafish embryos (72 hpf) when exposed to CdSe/ZnS QDs. After the CdSe/ZnS QDs exposure, the embryos showed a significant increase in mortality and malformation rate, a decrease in hatching rate and body length, an advance in hatching time, and a changing in the spontaneous movement frequency, and many other toxic effects, such as the condensation of embryonic eggs, the formation of pericardial cysts and curvature of the spine. Moreover, it was found that the MDA contents in the embryos in CdSe/ZnS QDs groups were significantly increased, and the SOD activities were changed. In addition, the mRNA expression level of MT and Hsp70 were up-regulated. All the information suggests that exposure of CdSe/ZnS QDs can cause toxic effects on zebrafish embryos, and the effects may be related to the releasing of Cd2+, particle size and oxidative stress. PMID:26031104

  9. Nanostructured TiO2 Films Attached CdSe QDs Toward Enhanced Photoelectrochemical Performance.

    PubMed

    Du, Yingying; Yang, Ping; Liu, Yunshi; Zhao, Jie; He, Haiyan; Miao, Yanping

    2016-06-01

    TiO2 films consisted of small nanoparticles were fabricated via a spinning coating method on fluorine doped in tin oxide (FTO) slide glass. After calcination, the films were subsequently sensitized by CdSe quantum dots (QDs) using mercaptopropionic acid (MPA) as a bifunctional surface modifier. Upon UV light irradiation, CdSe QDs inject electrons into TiO2 nanoparticles, thus resulting in the generation of photocurrent in QD-sensitized solar cell. The results indicate that TiO2 films sensitized by CdSe QDs have achieved 1.5-fold enhancement in photocurrent compared with pure TiO2 films, indicating that CdSe QDs can improve the photocurrent by promoting the separation of photoinduced charge carriers. In addition, the photocurrent enhances as the thickness of TiO2 films increased. Such improved photoelectrochemical performance is ascribed to the basis of improved interfacial charge transport of the TiO2-CdSe composite films. Combining QDs on TiO2 thin films is a promising and effective way to enhance the photoelectrochemical performance, which is important in QD-sensitized solar cell application. PMID:27427714

  10. Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

    NASA Astrophysics Data System (ADS)

    Salas, R.; Guchhait, S.; McNicholas, K. M.; Sifferman, S. D.; Dasika, V. D.; Jung, D.; Krivoy, E. M.; Lee, M. L.; Bank, S. R.

    2016-05-01

    We explore the effects of surfactant-mediated epitaxy on the structural, electrical, and optical properties of fast metal-semiconductor superlattice photoconductors. Specifically, application of a bismuth flux during growth was found to significantly improve the properties of superlattices of LuAs nanoparticles embedded in In0.53Ga0.47As. These improvements are attributed to the enhanced structural quality of the overgrown InGaAs over the LuAs nanoparticles. The use of bismuth enabled a 30% increase in the number of monolayers of LuAs that could be deposited before the InGaAs overgrowth degraded. Dark resistivity increased by up to ˜15× while carrier mobility remained over 2300 cm2/V-s and carrier lifetimes were reduced by >2× at comparable levels of LuAs deposition. These findings demonstrate that surfactant-mediated epitaxy is a promising approach to enhance the properties of ultrafast photoconductors for terahert generation.

  11. Analysis and design of a low-noise ROIC for hybrid InGaAs infrared FPA

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Huang, SongLei; Huang, ZhangCheng; Fang, Jiaxiong

    2011-08-01

    The noises of CMOS readout integrated circuit (ROIC) for hybrid focal plane array (FPA) may occupy a great part of total noise in conditions that a low resistance or large capacitor detector interfacing with CTIA input stage. A novel low noise low power preamplifier with shared current-mirrors bias is designed. It has a gain of more than 90dB, which makes enough inject efficiency and low detector bias offset. Besides, it has strong detector bias control, because the shared current-mirror copies the DC current of the amplifier and generates the bias control voltage. A pixel level Correlated Double Sample circuits is designed in order to suppress the reset KTC noise and 1/f noise from preamplifier. An experimental chip of 30μm pitch 32×32 array was fabricated in standard 0.5μm CMOS mixed signal process. A few experimental structures are designed to study the allocating of layout area for low noise designing. The ROIC is bonded to an existing back-illuminated 30μm pitch InGaAs photodiode array with indium bump fabrication. The test of both the ROIC chips and InGaAs focal plane array is shown in this paper, and the contrast of different structure is shown and analyzed.

  12. Lattice-matched and strained InGaAs solar cells for thermophotovoltaic use

    SciTech Connect

    Jain, R.K.; Wilt, D.M.; Jain, R.; Landis, G.A.; Flood, D.J.

    1996-02-01

    Lattice-matched and strained indium gallium arsenide solar cells can be used effectively and efficiently for thermophotovoltaic applications. A 0.75 eV bandgap InGaAs solar cell is well matched to a 2000 K blackbody source with a emission peak around 1.5 {mu}m. A 0.60 eV bandgap InGaAs cell is well suited to a Ho-YAG selective emitter and a blackbody at 1500 K which have emission peak around 2.0 {mu}m. Modeling results predict that the cell efficiencies in excess of 30{percent} are possible for the 1500 K Ho-YAG selective emitter (with strained InGaAs) and for the 2000 K blackbody (with lattice-matched InGaAs) sources. {copyright} {ital 1996 American Institute of Physics.}

  13. 4x4 Individually Addressable InGaAs APD Arrays Optimized for Photon Counting Applications

    NASA Technical Reports Server (NTRS)

    Gu, Y.; Wu, X.; Wu, S.; Choa, F. S.; Yan, F.; Shu, P.; Krainak, M.

    2007-01-01

    InGaAs APDs with improved photon counting characteristics were designed and fabricated and their performance improvements were observed. Following the results, a 4x4 individually addressable APD array was designed, fabricated, and results are reported.

  14. Characterization of NIR InGaAs imager arrays for the JDEM SNAPmission concept

    SciTech Connect

    Seshadri, S.; Cole, M.D.; Hancock, B.; Ringold, P.; Wrigley, C.; Bonati, M.; Brown, M.G.; Schubnell, M.; Rahmer, G.; Guzman, D.; Figer,D.; Tarle, G.; Smith, R.M.; Bebek, C.

    2006-05-23

    We present the results of a study of the performance of InGaAs detectors conducted for the SuperNova Acceleration Probe (SNAP) dark energy mission concept. Low temperature data from a nominal 1.7um cut-off wavelength 1kx1k InGaAs photodiode array, hybridized to a Rockwell H1RG multiplexer suggest that InGaAs detector performance is comparable to those of existing 1.7um cut-off HgCdTe arrays. Advances in 1.7um HgCdTe dark current and noise initiated by the SNAP detector research and development program makes it the baseline detector technology for SNAP. However, the results presented herein suggest that existing InGaAs technology is a suitable alternative for other future astronomy applications.

  15. InGaAs Detectors for Miniature Infrared Instruments

    NASA Technical Reports Server (NTRS)

    Krabach, T. N.; Staller, C.; Dejewski, S.; Cunningham, T.; Herring, M.; Fossum, E. R.

    1993-01-01

    In the past year, there has been substantial impetus for NASA to consider missions that are of relatively low cost as a trade off for a higher new mission launch rate. To maintain low mission cost, these missions will be of short duration and will use smaller launch vehicles (e.g. Pegasus). Consequently, very low volume, very low mass instrument (a.k.a. miniature instrument) payloads will be required. Furthermore, it is anticipated that the number of instruments flown on a particular mission will also be highly constrained; consequently increased instrument capability will also be desired. In the case of infrared instruments, focal planes typically require cooling to ensure high performance of the detectors, especially in the case of spectrometers where high D* is necessary. In this paper, we discuss the InGaAs detector technology and its potential.

  16. CdSe/ZnS core-shell QDs: Synthesis and investigating optical properties

    NASA Astrophysics Data System (ADS)

    Molaei, M.; Sarhani, F.; Bardsiri, F. Salari; Karmipour, M.

    2016-03-01

    In this work, CdSe quantum dots (QDs) were synthesized using a microwave activated reaction between NaHSe and CdSO4 in the presence of thioglycolic acid (TGA) as capping molecule and then using a one-pot method, ZnS shell was grown subsequently around CdSe cores by a room temperature reaction based on the photo-sensitivity of Na2S2O3 dissociation. Synthesized QDs were characterized by means of X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), UV-visible (UV-Vis) and photoluminescence (PL) spectroscopy. All these analyses confirmed the formation of CdSe QDs and successful growth of ZnS shell around CdSe cores.

  17. Electrical and optical performance characteristics of 0.74 eV p/n InGaAs monolithic interconnected modules

    SciTech Connect

    Wilt, D.M.; Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W. Jr.; Jain, R.K.; Murray, C.S.; Riley, D.R.

    1997-03-01

    There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1cm{sup 2} device consisting of eight series interconnected cells. MIM devices, produced from 0.74 eV InGaAs, have demonstrated V{sub oc}=3.2V , J{sub sc}=70mA/cm{sup 2} and a fill factor of 66{percent} under flashlamp testing. Infrared (IR) reflectance measurements ({gt}2{mu}m) of these devices indicate a reflectivity of {gt}82{percent}. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7{percent} AMO) have been demonstrated. {copyright} {ital 1997 American Institute of Physics.}

  18. Electrical and optical performance characteristics of 0.74eV p/n InGaAs monolithic interconnected modules

    SciTech Connect

    Wilt, D.M.; Weizer, V.G.; Fatemi, N.S.; Jenkins, P.P.; Hoffman, R.W. Jr.; Jain, R.K.; Murray, C.S.; Riley, D.R.

    1997-06-01

    There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 cm{sup 2} device consisting of eight series interconnected cells. MIM devices, produced from 0.74 eV InGaAs, have demonstrated V{sub oc} = 3.2 volts, J{sub sc} = 70 mA/cm{sup 2} and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (> 2 {micro}m) of these devices indicate a reflectivity of > 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

  19. Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Jain, Raj K.; Murray, Christopher S.; Riley, David R.

    1997-01-01

    There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

  20. Synthesis of CdTe QDs by hydrothermal method, with tunable emission fluorescence

    NASA Astrophysics Data System (ADS)

    Liu, Fujun; Laurent, Sophie; Vander Elst, Luce; Muller, Robert N.

    2015-09-01

    Cadmium telluride (CdTe) quantum dots (QDs) were prepared via a hydrothermal method, using 3-mercaptopropionic acid (3-MPA) as the stabilizing agent. With the help of absorption and emission spectra, it was found that prolonging the reaction time and raising the reaction temperature can increase the size of the QDs obtained, and hence induce a red shift of fluorescence emission. Rhodamine 6G was used as the reference to calculate the quantum yield (QY), and this showed that the use of extra Cd ions will distinctly increase the QY of CdTe.

  1. Analysis of crosstalk in front-illuminated InGaAs PIN hetero-junction photovoltaic infrared detector arrays

    NASA Astrophysics Data System (ADS)

    Li, Yongfu; Tang, Hengjing; Zhang, Kefeng; Li, Tao; Ning, Jinhua; Li, Xue; Gong, Haimei

    2009-07-01

    Here presented an experimental study on crosstalk in front illuminated planar and mesa-type InP/ InGaAs/ InP PIN hetero-junction photovoltaic infrared detector arrays. A scanning laser beam with an optical wavelength of 1310 nm coupled in a single-mode optical fiber placed within a few microns of the detector array surface was used to measure the crosstalk between the detector pixels. The crosstalk in the detector array varying with the distance between the incident laser spot and the measured pixel was shown. It is suggested that for the deep mesa-type arrays the dominating source of crosstalk is the light reflected from the detector substrate. And the dominating source of crosstalk that occurs in the planar type and shallow mesa type photovoltaic arrays is associated with photo-induced carries generated in the InGaAs absorption layer that diffuse laterally between neighbor pixels. These results gave out the possibility to optimize the detectors structures in order to reduce crosstalk.

  2. Characterization of photochemical filtration membranes in organic solvents by using sub-10nm fluorescent Cd-based QDs

    NASA Astrophysics Data System (ADS)

    Liu, Suwen; Zhang, Haizheng

    2013-04-01

    Semiconductor nanocrystals, also called quantum dots (QDs), have been proven as powerful fluorescent probes. This paper presents a new method to evaluate the retention efficiency of nanofiltration membranes using sub-10 nm fluorescent QDs in organic solvents. Two different Cd-based QDs with uniformed sizes (nominal 8 nm and 4 nm) were used as challenge particles in this study. Fluorescence spectrophotometer was used as a detector to measure the QDs concentration before and after filtration. High resolution transmission electron microscope (HRTEM) and dynamic light scattering (DLS) were employed for measuring particle size and size distribution, which revealed the QDs used in this study were with a narrow size distribution. Three different types of Entegris UPE membranes were tested by using this method. The filters were rated at 3 nm, 5 nm and 10 nm using bubble-point extrapolative methods were further confirmed by the QDs retention tests in solvents.

  3. Erythorbic acid promoted formation of CdS QDs in a tube-in-tube micro-channel reactor

    SciTech Connect

    Liang, Yan; Tan, Jiawei; Wang, Jiexin; Chen, Jianfeng; Sun, Baochang; Shao, Lei

    2014-12-15

    Erythorbic acid assistant synthesis of CdS quantum dots (QDs) was conducted by homogeneous mixing of two continuous liquids in a high-throughput microporous tube-in-tube micro-channel reactor (MTMCR) at room temperature. The effects of the micropore size of the MTMCR, liquid flow rate, mixing time and reactant concentration on the size and size distribution of CdS QDs were investigated. It was found that the size and size distribution of CdS QDs could be tuned in the MTMCR. A combination of erythorbic acid promoted formation technique with the MTMCR may be a promising pathway for controllable mass production of QDs.

  4. Lattice-engineered MBE growth of high-indium mole fraction InGaAs for low cost MMICs and (1.3--1.55 {micro}m) OEICs

    SciTech Connect

    Childs, T.T.; Sokolov, V.; Sullivan, C.T.

    1997-11-01

    Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining photonic devices applicable to the 1.3 to 1.55 {micro}m wavelength range and monolithic microwave (or mm-wave) integrated circuits (MMICs) on GaAs is demonstrated. A key factor in the MBE growth is incorporation of an InGaAs active layer having an indium arsenide mole fraction of 0.35 or greater and its lattice compatibility with the underlying semi-insulating GaAs substrate. The InGaAs layer used for the photonic devices, can also serve as the active channel for the high electron mobility transistors (HEMTs) for application in MMICs. Several examples of active and passive photonic devices grown by MBE are presented including an optical ridge waveguide, and a photodetector for detection of light in the 1.3 {micro}m range. The material structure includes a 3-layer AlGaAs/GaAs/AlGaAs optical waveguide and a thin InGaAs absorbing layer situated directly above the optical waveguide. Metal-semiconductor-metal (MSM) photodetectors are formed on the top surface of the InGaAs layer for collection of the photo-induced carriers. The optical ridge waveguide is designed for lateral incidence of the light to enhance the MSM photodetector responsivity. Initial measurements on the optical waveguide and photodetector are presented.

  5. InGaAs PIN photodetectors integrated and vertically coupled with silicon-on-insulator waveguides

    NASA Astrophysics Data System (ADS)

    Wang, Zhiqi; Qiu, Chao; Sheng, Zhen; Wu, Aimin; Wang, Xi; Zou, Shichang; Gan, Fuwan

    2014-05-01

    Heterogeneous integration of III-V materials with silicon-on-insulator (SOI) waveguide circuitry by an adhesive die-to-wafer bonding process has been proposed as a solution to Si-based lasers and photodetectors. Here, we present the design and optimization of an InGaAs PIN photodetector vertically coupled with the underlying SOI waveguide, which could be readily fabricated using this bonding process. With the help of grating couplers, a thick bonding layer of 2.5 μm is applied, which inherently avoids the risk of low-bonding yield suffering in the evanescent coupling counterpart. An anti-reflection layer is also introduced between the bonding layer and the III-V layer stack to relieve the accuracy requirement for the bonding layer thickness. Besides, by optimizing the structure parameters, a high-absorption efficiency of 82% and a wide optical 1dB-bandwidth of 220nm are obtained. The analysis shows that the detection bandwidth of the present surface-illuminated photodetector is generally limited by transit-time in the i-InGaAs layer. The relationship of the detection bandwidth and the absorption efficiency versus the i-InGaAs layer thickness is presented for the ease of choosing proper structure parameters for specific applications. With the results presented here, the device can be readily fabricated.

  6. Spectroscopic and Microscopic Studies on the Mechanism of Mitochondrial Toxicity Induced by CdTe QDs Modified with Different Ligands.

    PubMed

    Lai, Lu; Jin, Jian-Cheng; Xu, Zi-Qiang; Ge, Yu-Shu; Jiang, Feng-Lei; Liu, Yi

    2015-08-01

    Quantum dots (QDs) are increasingly applied in sensing, drug delivery, biomedical imaging, electronics industries, etc. Consequently, it is urgently required to examine their potential threat to humans and the environment. In the present work, the toxicity of CdTe QDs with nearly identical maximum emission wavelength but modified with two different ligands (MPA and BSA) to mitochondria was investigated using flow cytometry, spectroscopic, and microscopic methods. The results showed that QDs induced mitochondrial permeability transition (MPT), which resulted in mitochondrial swelling, collapse of the membrane potential, inner membrane permeability to H(+) and K(+), the increase of membrane fluidity, depression of respiration, alterations of ultrastructure, and the release of cytochrome c. Furthermore, the protective effects of CsA and EDTA confirmed QDs might be able to induce MPT via a Ca(2+)-dependent domain. However, the difference between the influence of CdTe QDs and that of Cd(2+) on mitochondrial membrane fluidity indicated the release of Cd(2+) was not the sole reason that QDs induced mitochondrial dysfunction, which might be related to the nanoscale effect of QDs. Compared with MPA-CdTe QDs, BSA-CdTe QDs had a greater effect on the mitochondrial swelling, membrane fluidity, and permeabilization to H(+) and K(+) by mitochondrial inner membrane, which was caused the fact that BSA was more lipophilic than MPA. This study provides an important basis for understanding the mechanism of the toxicity of CdTe QDs to mitochondria, and valuable information for safe use of QDs in the future. PMID:25758230

  7. Liver Toxicity of Cadmium Telluride Quantum Dots (CdTe QDs) Due to Oxidative Stress in Vitro and in Vivo

    PubMed Central

    Zhang, Ting; Hu, Yuanyuan; Tang, Meng; Kong, Lu; Ying, Jiali; Wu, Tianshu; Xue, Yuying; Pu, Yuepu

    2015-01-01

    With the applications of quantum dots (QDs) expanding, many studies have described the potential adverse effects of QDs, yet little attention has been paid to potential toxicity of QDs in the liver. The aim of this study was to investigate the effects of cadmium telluride (CdTe) QDs in mice and murine hepatoma cells alpha mouse liver 12 (AML 12). CdTe QDs administration significantly increased the level of lipid peroxides marker malondialdehyde (MDA) in the livers of treated mice. Furthermore, CdTe QDs caused cytotoxicity in AML 12 cells in a dose- and time-dependent manner, which was likely mediated through the generation of reactive oxygen species (ROS) and the induction of apoptosis. An increase in ROS generation with a concomitant increase in the gene expression of the tumor suppressor gene p53, the pro-apoptotic gene Bcl-2 and a decrease in the anti-apoptosis gene Bax, suggested that a mitochondria mediated pathway was involved in CdTe QDs’ induced apoptosis. Finally, we showed that NF-E2-related factor 2 (Nrf2) deficiency blocked induced oxidative stress to protect cells from injury induced by CdTe QDs. These findings provide insights into the regulatory mechanisms involved in the activation of Nrf2 signaling that confers protection against CdTe QDs-induced apoptosis in hepatocytes. PMID:26404244

  8. Comparison of Ge, InGaAs p-n junction solar cell

    NASA Astrophysics Data System (ADS)

    Korun, M.; Navruz, T. S.

    2016-04-01

    In this paper, the effect of material parameters on the efficiency of Ge and InGaAs p-n junction solar cells which are most commonly used as the sub-cell of multi-junction solar cells are investigated and the results due to these two cells are compared. The efficiency of Ge (EG =0.67 eV) solar cell which is easy to manufacture and inexpensive in cost, is compared with the efficiency of InGaAs (EG =0.74 eV) solar cell which is coming with drawback of high production difficulties and cost. The theoretical efficiency limit of Ge and InGaAs solar cells with optimum thickness were determined by using detailed balance model under one sun AM1.5 illumination. Since the band gap values of two cells are close to each other, approximate detailed balance efficiency limits of 16% for InGaAs and 14% for Ge are obtained. When drift-diffusion model is used and the thicknesses and doping concentrations are optimized, the maximum efficiency values are calculated as 13% for InGaAs and 9% for Ge solar cell. For each solar cell external quantum efficiency curves due to wavelength are also sketched and compared.

  9. Low-dark current 1024×1280 InGaAs PIN arrays

    NASA Astrophysics Data System (ADS)

    Yuan, Ping; Chang, James; Boisvert, Joseph C.; Karam, Nasser

    2014-06-01

    Photon counting imaging applications requires low noise from both detector and readout integrated circuit (ROIC) arrays. In order to retain the photon-counting-level sensitivity, a long integration time has to be employed and the dark current has to be minimized. It is well known that the PIN dark current is sensitive to temperature and a dark current density of 0.5 nA/cm2 was demonstrated at 7 °C previously. In order to restrain the size, weight, and power consumption (SWaP) of cameras for persistent large-area surveillance on small platforms, it is critical to develop large format PIN arrays with small pitch and low dark current density at higher operation temperatures. Recently Spectrolab has grown, fabricated and tested 1024x1280 InGaAs PIN arrays with 12.5 μm pitch and achieved 0.7 nA/cm2 dark current density at 15 °C. Based on our previous low-dark-current PIN designs, the improvements were focused on 1) the epitaxial material design and growth control; and 2) PIN device structure to minimize the perimeter leakage current and junction diffusion current. We will present characterization data and analyses that illustrate the contribution of various dark current mechanisms.

  10. Improved charge transportation at PbS QDs/TiO2 interface for efficient PEC hydrogen generation.

    PubMed

    Ikram, Ashi; Sahai, Sonal; Rai, Snigdha; Dass, Sahab; Shrivastav, Rohit; Satsangi, Vibha R

    2016-06-21

    The effect of lead sulfide (PbS) quantum dots (QDs) on the photoelectrochemical properties of TiO2 with a varied number of SILAR cycles has been investigated. The study has also highlighted physical processes including band alignment, charge recombination and transportation for a PbS QDs/TiO2 interface. The inclusion of PbS QDs underneath TiO2 thin film has significantly enhanced the PEC response due to a higher number of photogenerated charge carriers along with the efficient separation and facilitation of these carriers towards their respective electrodes. The uniqueness of the work lies in the high stability of the system as PbS QDs lie beneath the TiO2 thin film, compared to the commonly used QDs sensitization over metal oxide, along with a good photoresponse. PMID:27230501

  11. Research in the modulation transfer function (MTF) measurement of InGaAs focal plane arrays

    NASA Astrophysics Data System (ADS)

    Xu, Zhonghua; Fang, Jiaxiong

    2012-10-01

    The Modulation Transfer Function (MTF) of an opto-electrical device is defined as the ratio of the system output modulation to the input modulation, which describes the performance of the imaging system in the Fourier domain. Accurate measurement of the MTF is often obtained by analyzing the high-quality image of a special target reproduced by the optical system with known MTF. To evaluate the MTF of short-wave infrared InGaAs focal plane arrays (FPAs), we develop a laboratory system with high precision and automation based on the slit scan method. An 8*1 linear InGaAs FPAs is then measured by this test set-up for the first time to evaluate the MTF of each pixel at room temperature. The results show a good MTF repeatability and uniformity of the 8*1 InGaAs FPAs. The relationship between the MTF and illumination is also discussed.

  12. InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner.

    PubMed

    Han, Sang-Pil; Ko, Hyunsung; Park, Jeong-Woo; Kim, Namje; Yoon, Young-Jong; Shin, Jun-Hwan; Kim, Dae Yong; Lee, Dong Hun; Park, Kyung Hyun

    2013-11-01

    We present a terahertz (THz) broadband antenna-integrated 1 × 20 InGaAs Schottky barrier diode (SBD) array detector with an average responsivity of 98.5 V/W at a frequency of 250 GHz, which is measured without attaching external amplifiers and Si lenses, and an average noise equivalent power (NEP) of 106.6 pW/√Hz. The 3-dB bandwidth of the SBD detector is also investigated at approximately 180 GHz. For implementing an array-type SBD detector by a simple fabrication process to achieve a high yield, a structure comprising an SiN(x) layer instead of an air bridge between the anode and the cathode is designed. THz line beam imaging using a Gunn diode emitter with a center frequency of 250 GHz and a 1 × 20 SBD array detector is successfully demonstrated. PMID:24216813

  13. Analysis of cross talk in high density mesa linear InGaAs detector arrays using tiny light dot

    NASA Astrophysics Data System (ADS)

    Zhu, Yaoming; Li, Xue; Wei, Jun; Li, Jianwei; Tang, Hengjing; Gong, Hai-mei

    2012-10-01

    With the development of material growth and device technologies, the pixel density becomes much higher. The pixel size and the spacing between pixels have been becoming smaller and smaller, causing the cross talk of the neighboring pixels acuter. Linear InGaAs detector arrays with 25 μm pitch and 2 μm spacing were fabricated, and the modulation transfer function of detector arrays with infrared lens was measured using a system of collimator tube. A tiny light dot produced by the collimator tube was used to analyze and calculated the cross talk of the detector with conserved absorber around the photosensitive mesa, and the cross talk between two neighboring pixels was approximately estimated. With the conserved absorber structure, the electronic cross talk is dominant in the cross talks between neighboring pixels.

  14. Indium and gallium diffusion through zirconia in the TiN/ZrO{sub 2}/InGaAs stack

    SciTech Connect

    Ceballos-Sanchez, O.; Martinez, E.; Guedj, C.; Veillerot, M.; Herrera-Gomez, A.

    2015-06-01

    Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS) was applied to the TiN/ZrO{sub 2}/InGaAs stack to assess its thermal stability. Through a robust ARXPS analysis, it was possible to observe subtle effects such as the thermally induced diffusion of substrate atomic species (In and Ga) through the dielectric layer. The detailed characterization of the film structure allowed for assessing the depth profiles of the diffused atomic species by means of the scenarios-method. Since the quantification for the amount of diffused material was done at different temperatures, it was possible to obtain an approximate value of the activation energy for the diffusion of indium through zirconia. The result is very similar to the previously reported values for indium diffusion through alumina and through hafnia.

  15. Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP/InP

    SciTech Connect

    Zhou, D.; Noetzel, R.; Otten, F.W.M. van; Eijkemans, T.J.; Wolter, J.H.

    2006-05-15

    We report on the optical properties of threefold stacked InGaAs sidewall quantum wires (QWires) with quaternary InGaAsP barriers grown on shallow-patterned InP (311)A substrates by chemical beam epitaxy. Temperature dependent photoluminescence (PL) reveals efficient carrier transfer from the adjacent quantum wells (QWells) into the QWires at low temperature, thermally activated repopulation of the QWells at higher temperature, and negligible localization of carriers along the QWires. Strong broadening of power dependent PL indicates enhanced state filling in the QWires compared to that in the QWells. Clear linear polarization of the PL from the QWires confirms the lateral quantum confinement of carriers. These results demonstrate excellent optical quality of the sidewall QWire structures with room temperature PL peak wavelength at 1.55 {mu}m for applications in fiber-based optical telecommunication systems.

  16. The influence of sunlight irradiation on the characteristics of InGaAs detectors

    NASA Astrophysics Data System (ADS)

    Shao, Xiumei; Zhu, Yaoming; Li, Xue; Tang, Hengjing; Li, Tao; Gong, Haimei

    2014-10-01

    InGaAs ternary compound is suitable for detector applications in the shortwave infrared (SWIR) band. Due to the advantages of good stability, low cooling requirements and high detectivity, InGaAs detectors have been applied widely in the space remote sensing area. However, InGaAs detectors would be affected by strong sunlight direct irradiation in space application. In this paper, a mesa-type InGaAs detector with large sensitive area of diameter 5mm was designed based on InP/In0.53Ga0.47As/InP epitaxial material, which is lattice-matched to InP substrate. The InGaAs detectors were fabricated by ICP etching, and packaged in a Kovar shell. The relative spectral response is in the range of 0.9μm to 1.7μm. The mechanism of the sunlight direct irradiation on InGaAs detector performance was studied. The sunlight were focalized by lens and irradiated directly on the detector. A piece of epitaxial material was investigated at the same time which was cleaved from a 2 inch wafer, same to the detector material. The real time testing was taken out to observe the output signal of the detector. After the irradiation experiment, the I-V curves and the relative response were tested immediately. The dark current of the detector increased temporarily, but come back to the original level after 24 hours. The response spectrum was nearly not affected. The XRD testing of the epitaxial material sample was carried out before and after sunlight direct irradiation. The sunlight irradiation causes thermal stress degradation. The thermal electrons were produced by the absorption of a great deal of visible light, leading to local enhancement of temperature and the lattice degeneration of the material.

  17. Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires.

    PubMed

    Speckbacher, Maximilian; Treu, Julian; Whittles, Thomas J; Linhart, Wojciech M; Xu, Xiaomo; Saller, Kai; Dhanak, Vinod R; Abstreiter, Gerhard; Finley, Jonathan J; Veal, Tim D; Koblmüller, Gregor

    2016-08-10

    Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their modification of the electronic band structure. Although the effects of the exposed, bare NW surface have been widely studied with respect to charge carrier transport and optical properties, the underlying electronic band structure, Fermi level pinning, and surface band bending profiles are not well explored. Here, we directly and quantitatively assess the Fermi level pinning at the surfaces of composition-tunable, intrinsically n-type InGaAs NWs, as one of the prominent, technologically most relevant NW systems, by using correlated photoluminescence (PL) and X-ray photoemission spectroscopy (XPS). From the PL spectral response, we reveal two dominant radiative recombination pathways, that is, direct near-band edge transitions and red-shifted, spatially indirect transitions induced by surface band bending. The separation of their relative transition energies changes with alloy composition by up to more than ∼40 meV and represent a direct measure for the amount of surface band bending. We further extract quantitatively the Fermi level to surface valence band maximum separation using XPS, and directly verify a composition-dependent transition from downward to upward band bending (surface electron accumulation to depletion) with increasing Ga-content x(Ga) at a crossover near x(Ga) ∼ 0.2. Core level spectra further demonstrate the nature of extrinsic surface states being caused by In-rich suboxides arising from the native oxide layer at the InGaAs NW surface. PMID:27458736

  18. The Thermoelectric Properties of Rare Earths as Dopants in InGaAs Films

    NASA Astrophysics Data System (ADS)

    Koltun, Rachel Ann

    Current energy technologies lose over half of the energy input to waste heat. Thermoelectric materials can recover some of this waste heat by converting it into electricity. Thermoelectric devices have no moving parts, so they are low noise and highly reliable, making them particularly suitable for extreme environments. A good thermoelectric has low thermal conductivity to maintain large temperature gradients and high electrical conductivity to effectively transport carriers across that temperature gradient. One of the major challenges in engineering such thermoelectrics is effectively decoupling these parameters. These relationships are quantified in the dimensionless thermoelectric figure of merit, ZT, where a ZT of 1 is considered commercially viable. Doping MBE grown InGaAs films with rare earths forms embedded nanoparticles that have been shown to improve thermoelectric efficiency of InGaAs. Rare earth doping effectively overcomes the problematic relationship between electrical and thermal conductivities. These embedded particles effectively decouple thermal and electrical properties by contributing carriers to increase electrical conductivity as well as forming scattering centers for mid to long wavelength phonons to decrease thermal conductivity. However, the mechanism for carrier generation from rare earths is poorly understood. Comparing different rare earths as dopants in InGaAs, we find a positive correlation with the electrical activation efficiency as the rare earth arsenide nanoparticles are more closely lattice matched to the host matrix. This is in contrast to traditional Si doped InGaAs, which is fully ionized at room temperature. The high doping efficiency of Si leads it to be as good or better of a dopant for thermoelectrics compared to the best rare earths studied. We observe that rare earth doped InGaAs has thermal activation of carriers at high temperature, giving it the potential to be a more efficient thermoelectric in this regime than

  19. Reliability and failure mode investigation of high-power multimode InGaAs strained quantum well single emitters

    NASA Astrophysics Data System (ADS)

    Sin, Yongkun; Foran, Brendan; Presser, Nathan; Mason, Maribeth; Moss, Steven C.

    2007-02-01

    In recent years record performance characteristics from multi-mode InGaAs strained quantum well single emitters at 920-980nm have been reported including a maximum CW optical output power of ~20W and a power conversion efficiency of ~75%. These excellent performance characteristics are only possible through combined optimization of laser structure design, chip fabrication processes, and packaging. Whereas broad area multi-mode single emitters likely have sufficient reliability for industrial uses, reliability of these lasers still remains a concern for communications applications including deployment in potential space satellite systems where high reliability is required. Most of previous reports on these lasers have been focused on their performance characteristics with very limited reports on failure mode analysis although understanding the physics of failure is crucial in developing a proper lifetime model for these lasers. We thus report on the reliability and failure mode analysis of high power multi-mode single emitters. The lasers studied were broad area strained InGaAs single QW lasers at 940-980nm with typical aperture widths of around 100μm. At an injection current of 7A typical CW output powers were over 6W at 25°C with a wall plug efficiency of ~60%. First, various lasing characteristics were measured including spatial and thermal characteristics that are critical to understanding performance and reliability of these devices. ACC burn-in tests with different stress conditions were performed on these devices until their failure. We report accelerated lifetest results with over 5000 accumulated test hours. Finally, we report failure mode investigation results of the degraded lasers.

  20. Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

    NASA Astrophysics Data System (ADS)

    Hospodková, A.; Oswald, J.; Pangrác, J.; Kuldová, K.; Zíková, M.; Vyskočil, J.; Hulicius, E.

    2016-01-01

    This review paper summarizes some of results achieved during last years of our quantum dot (QD) research. We show that the QD shape (aspect ratio and elongation) significantly influences the QD photoluminescence (PL) spectrum. Magnetophotoluminescence can be used for determination of the anisotropy of QDs. While the calculated shifts in magnetic field of the energies of higher radiative transitions are found to be sensitive to the lateral elongation, the shift of the lowest transition is determined mainly by the exciton effective mass. This behavior can be used for determining both the effective mass and the elongation fairly reliably from the magnetophotoluminescence spectra displaying at least two resolved bands. Lateral shape of InAs/GaAs QDs in vertically correlated structures was also studied. We found the ways to control the QD elongation and consequently the energy difference between PL transitions by adjusting properly the spacer layer thickness. The main goal was to redshift QD PL emission towards telecommunication wavelengths of Metal Organic Vapor Phase Epitaxy prepared InAs/GaAs QDs using InGaAs or GaAsSb covering strain reducing layer (SRL). Our results proved that GaAsSb SRL improves the QD PL properties and the type I or type II band alignment can be controlled by both, GaAsSb composition and QD size. Maintaining the type I heterostructure is important for high luminescence efficiency and emission wavelength stability of QD structure. The simulation of electron structure in InAs QDs covered with GaAsSb SRL and experimental results reveal the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The type II structure of InAs/GaAs QDs covered by GaAsSb SRL with Sb content near 30% enabled us to achieve extremely long emission wavelength at 1.8 μm. The high amount of antimony in the SRL causes the preservation of QD size, and increased QD size prolongs the PL wavelength. The type II heterostructures with

  1. Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE

    NASA Astrophysics Data System (ADS)

    Balakrishnan, K.; Iida, S.; Kumagawa, M.; Hayakawa, Y.

    2002-07-01

    A study of the liquid phase epitaxial growth of InxGa1-xAs (x = 0.06) layers on different types of patterned GaAs(100) substrates has been carried out. The dependence of growth morphology on the stripe orientation of the star patterned trench substrate has been observed. Pyramid layers were grown in the stripes oriented along the <001> direction. Broken tent structures formed along the <012> direction. Pyramidal structured layers looked to grow faster than the tent-like and broken tent-like structures. In order to analyse the hollow pyramid structure growth in detail, they were grown on circular trench substrates for different periods of time. Hollow pyramidal structures of InGaAs have been grown on circular patterned trench substrates. Effective defect filtration can be realized in this kind of growth of hollow pyramidal structures. The formation mechanism of the hollow pyramid structured layers has been studied in detail.

  2. Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    2000-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

  3. (In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A

    SciTech Connect

    Zhou, D.; Noetzel, R.; Gong, Q.; Offermans, P.; Koenraad, P.M.; Veldhoven, P.J. van; Otten, F.W.M. van; Eijkemans, T.J.; Wolter, J.H.

    2005-03-15

    (In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa stripes on shallow-patterned InP (311)A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared to the adjacent quantum wells, as determined by cross-sectional scanning-tunneling microscopy and microphotoluminescence (micro-PL) spectroscopy. The PL of the (In,Ga)As QWires with InP and quaternary (Ga,In)(As,P) barriers reveals narrow linewidth, high efficiency, and large lateral carrier confinement energies of 60-70 meV. The QWires are stacked in growth direction with identical PL peak emission energy. The PL emission energy is not only controlled by the (In,Ga)As layer thickness but also by the patterned mesa height. Stacked (In,Ga)As QWires with quaternary barriers exhibit room temperature PL emission at 1.55 {mu}m in the technologically important wavelength region for telecommunication applications.

  4. Microsecond-long lasing delays in thin P-clad InGaAs QW lasers

    SciTech Connect

    Wu, C.H.; Miester, C.F; Zory, P.S.; Emanuel, M.A.

    1996-06-01

    Microsecond-long lasing delays have been observed in wide-stripe, thin p-clad, InGaAs single quantum well (QW) lasers with ``thick`` p{sup +} cap layers. Computer modeling indicates that localized refractive index changes in the cap layer due to ohmic heating from the con- tact resistance may be the root cause.

  5. Oligomeric nanoparticles functionalized with NIR-emitting CdTe/CdS QDs and folate for tumor-targeted imaging.

    PubMed

    Yuan, Yue; Zhang, Jia; An, Linna; Cao, Qinjingwen; Deng, Yun; Liang, Gaolin

    2014-09-01

    We report herein the facile surface-functionalization of one type of biocompatible, oligomeric nanoparticles 1-NPs with NIR-emitting CdTe/CdS QDs and folate for tumor-targeted imaging in vivo. The -NH2 and -SH groups of cysteine residues on the 1-NPs were utilized to covalently conjugate CdTe/CdS QDs and Mal-FA to prepare the hybrid nanoparticles 1-NPs-QDs-FA. As-prepared 1-NPs-QDs-FA showed NIR-fluorescence emission at 734 nm, selective uptake by FR-overexpressing tumor cells in vitro, and selective FR-overexpressing tumor-targeted imaging in vivo. This first example of oligomeric/inorganic hybrid nanoparticles provides people with new type of biomaterials for tumor-targeted imaging with high selectivity. PMID:24952975

  6. Photosensitization of CdSe/ZnS QDs and reliability of assays for reactive oxygen species production.

    PubMed

    Cooper, Daniel R; Dimitrijevic, Nada M; Nadeau, Jay L

    2010-01-01

    CdSe/ZnS quantum dots (QDs) conjugated to biomolecules that can act as electron donors are said to be "photosensitized": that is, they are able to oxidize or reduce molecules whose redox potential lies inside their band edges, in particular molecular oxygen and water. This leads to the formation of reactive oxygen species (ROS) and phototoxicity. In this work, we quantify the generation of different forms of ROS from as-synthesized QDs in toluene; water-solubilized, unconjugated QDs; QDs conjugated to the neurotransmitter dopamine; and dopamine alone. Results of indirect fluorescent ROS assays, both in solution and inside cells, are compared with those of spin-trap electron paramagnetic resonance spectroscopy (EPR). The effect of these particles on the metabolism of mammalian cells is shown to be dependent upon light exposure and proportional to the amount of ROS generated. PMID:20648372

  7. Photosensitization of CdSe/ZnS QDs and reliability of assays for reactive oxygen species production.

    SciTech Connect

    Cooper, D. R.; Dimitrijevic, N. M.; Nadeau, J. L.; McGill Univ.

    2010-01-01

    CdSe/ZnS quantum dots (QDs) conjugated to biomolecules that can act as electron donors are said to be 'photosensitized': that is, they are able to oxidize or reduce molecules whose redox potential lies inside their band edges, in particular molecular oxygen and water. This leads to the formation of reactive oxygen species (ROS) and phototoxicity. In this work, we quantify the generation of different forms of ROS from as-synthesized QDs in toluene; water-solubilized, unconjugated QDs; QDs conjugated to the neurotransmitter dopamine; and dopamine alone. Results of indirect fluorescent ROS assays, both in solution and inside cells, are compared with those of spin-trap electron paramagentic resonance spectroscopy (EPR). The effect of these particles on the metabolism of mammalian cells is shown to be dependent upon light exposure and proportional to the amount of ROS generated.

  8. Toxicological effect of MPA-CdSe QDs exposure on zebrafish embryo and larvae.

    PubMed

    Zhang, Wei; Lin, Kuangfei; Sun, Xue; Dong, Qiaoxiang; Huang, Changjiang; Wang, Huili; Guo, Meijin; Cui, Xinhong

    2012-09-01

    Cadmium selenium (CdSe) quantum dots (QDs) are semiconductor nanocrystals that hold wide range of applications and substantial production volumes. Due to unique composition and nanoscale properties, their potential toxicity to aquatic organisms has increasingly gained a great amount of interest. However, the impact of CdSe QDs exposure on zebrafish embryo and larvae remains almost unknown. Therefore, the lab study was performed to determine the developmental and behavioral toxicities to zebrafish under continuous exposure to low level CdSe QDs (0.05-31.25 mg L(-1)) coated with mercaptopropionic acid (MPA). The results showed MPA-CdSe exposure from embryo to larvae stage affected overall fitness. Our findings for the first time revealed that: (1) The 120 h LC(50) of MPA-CdSe for zebrafish was 1.98 mg L(-1); (2) embryos exposed to MPA-CdSe resulted in malformations incidence and lower hatch rate; (3) abnormal vascular of FLI-1 transgenic zebrafish larvae appeared after exposure to MPA-CdSe including vascular junction, bifurcation, crossing and particle appearance; (4) larvae behavior assessment showed during MPA-CdSe exposure a rapid transition from light-to-dark elicited a similar, brief burst and a higher basal swimming rate; (5) MPA-CdSe induced embryos cell apoptosis in the head and tail region. Results of the observations provide a basic understanding of MPA-CdSe toxicity to aquatic organisms and suggest the need for additional research to identify the toxicological mechanism. PMID:22595531

  9. Formation of ZnSe/Bi{sub 2}Se{sub 3} QDs by surface cation exchange and high photothermal conversion

    SciTech Connect

    Jia, Guozhi; Wang, Peng; Zhang, Yanbang; Wu, Zengna; Li, Qiang; Yao, Jianghong; Chang, Kai

    2015-08-15

    Water-dispersed core/shell structure ZnSe/Bi{sub 2}Se{sub 3} quantum dots were synthesized by ultrasonicwave-assisted cation exchange reaction. Only surface Zn ion can be replaced by Bi ion in ZnSe quantum dots, which lead to the ultrathin Bi{sub 2}Se{sub 3} shell layer formed. It is significance to find to change the crystal of QDs due to the acting of ultrasonicwave. Cation exchange mechanism and excellent photothermal conversion properties are discussed in detail.

  10. Peptide-functionalized ZCIS QDs as fluorescent nanoprobe for targeted HER2-positive breast cancer cells imaging.

    PubMed

    Michalska, Martyna; Florczak, Anna; Dams-Kozlowska, Hanna; Gapinski, Jacek; Jurga, Stefan; Schneider, Raphaël

    2016-04-15

    In this paper, the synthesis of alloyed CuInZnxS2+x quantum dots (ZCIS QDs), their transfer into aqueous solution via a polymer coating technique, and the use of these nanocrystals to selectively target HER2-positive cells, are reported. By optimizing first the ZnS shell deposition process onto the CuInS2 core, and next the encapsulation of the dots with the amphiphilic poly(maleic anhydride-alt-1-octadecene) (PMAO) polymer, water-dispersible ZCIS QDs were successfully prepared. The nanocrystals with a photoluminescence quantum yield of 35% were purified via centrifugation and ultracentrifugation and high quality nanoparticles with narrow size distributions and surface charges were obtained. After verifying the biocompatibility of PMO-coated ZCIS QDs, we coupled these nanocrystals with the LTVSPWY peptide and demonstrated via MTT assay that both bare and the peptide-linked QDs exhibit low cytotoxicity. The HER2-mediated delivery of the peptide-linked QDs was confirmed by confocal microscopy. This study indicates that as engineered QDs can efficiently be used as fluorescent nanoprobes for selective labelling of HER2-positive SKBR3 cancer cells. PMID:26850146

  11. Synthesis of silica protected photoluminescence QDs and their applications for transparent fluorescent films with enhanced photochemical stability

    NASA Astrophysics Data System (ADS)

    Zhou, Changhua; Shen, Huaibin; Wang, Hongzhe; Xu, Weiwei; Mao, Mao; Wang, Sujuan; Li, Lin Song

    2012-10-01

    In this paper, we have demonstrated a novel and simple way to prepare transparent composite fluorescent films by using poly (acrylic acid) co-polymer as a matrix and silica coated photoluminescence (PL) quantum dots (QDs) as light-emitting materials. The strategies include preparing aqueous amphiphilic oligomer (polymaleic acid n-hexadecanol ester, PMAH) modified QDs, encapsulating the aqueous QDs in silica with a modified Stöber method and fabricating the QD-PMAH-SiO2-polymer composite fluorescent films with a spin-coating method. The obtained light-emitting thin films were transparent under room light and showed bright red, green and deep-blue light under the irradiation of UV light. The PL intensity of the composite films increased incrementally with the number of layers and the concentration of QD-PMAH-SiO2 within each film. A white light emitting film was also fabricated by combining the silica coated red, green and deep-blue QDs in a proper ratio. Moreover, the photochemical stability of the QD-PMAH-SiO2 in composite film was enhanced significantly compared with PMAH coated QDs, because of a thicker and compact passivating silica layer formed on the surfaces of the PL QDs.

  12. Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

    SciTech Connect

    Bracher, Gregor; Schraml, Konrad; Blauth, Mäx; Wierzbowski, Jakob; López, Nicolás Coca; Bichler, Max; Müller, Kai; Finley, Jonathan J.; Kaniber, Michael

    2014-07-21

    We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to ∼10 nm. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots ∼25 nm below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from 5 μm to 1 μm, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length L{sub i} is varied. A splitting ratio of 50:50 is observed for L{sub i}∼9±1 μm and 1 μm wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

  13. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

    NASA Astrophysics Data System (ADS)

    Yerino, Christopher D.; Simmonds, Paul J.; Liang, Baolai; Jung, Daehwan; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Huffaker, Diana L.; Höfling, Sven; Kamp, Martin; Lee, Minjoo Larry

    2014-12-01

    Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

  14. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

    SciTech Connect

    Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Kamp, Martin; Höfling, Sven

    2014-12-22

    Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

  15. Ultrafast spin tunneling and injection in coupled nanostructures of InGaAs quantum dots and quantum well

    SciTech Connect

    Yang, Xiao-Jie Kiba, Takayuki; Yamamura, Takafumi; Takayama, Junichi; Subagyo, Agus; Sueoka, Kazuhisa; Murayama, Akihiro

    2014-01-06

    We investigate the electron-spin injection dynamics via tunneling from an In{sub 0.1}Ga{sub 0.9}As quantum well (QW) to In{sub 0.5}Ga{sub 0.5}As quantum dots (QDs) in coupled QW-QDs nanostructures. These coupled nanostructures demonstrate ultrafast (5 to 20 ps) spin injection into the QDs. The degree of spin polarization up to 45% is obtained in the QDs after the injection, essentially depending on the injection time. The spin injection and conservation are enhanced with thinner barriers due to the stronger electronic coupling between the QW and QDs.

  16. Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons

    SciTech Connect

    Normand, E.; Oberg, D.L.; Wert, J.L.

    1995-12-01

    A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and russian silicon surface barrier detectors, and InGaAs photodiodes.

  17. Size dependence of electron spin dephasing in InGaAs quantum dots

    SciTech Connect

    Huang, Y. Q.; Puttisong, Y.; Buyanova, I. A.; Chen, W. M.; Yang, X. J.; Subagyo, A.; Sueoka, K.; Murayama, A.

    2015-03-02

    We investigate ensemble electron spin dephasing in self-assembled InGaAs/GaAs quantum dots (QDs) of different lateral sizes by employing optical Hanle measurements. Using low excitation power, we are able to obtain a spin dephasing time T{sub 2}{sup *} (in the order of ns) of the resident electron after recombination of negative trions in the QDs. We show that T{sub 2}{sup *} is determined by the hyperfine field arising from the frozen fluctuation of nuclear spins, which scales with the size of QDs following the Merkulov-Efros-Rosen model. This scaling no longer holds in large QDs, most likely due to a breakdown in the lateral electron confinement.

  18. Optical properties of InGaAs linear graded buffer layers on GaAs grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, B.; Baek, J. H.; Lee, J. H.; Choi, S. W.; Jung, S. D.; Han, W. S.; Lee, E. H.

    1996-05-01

    We report optical characteristics of linear graded InxGa1-xAs (XIn=0-0.58) buffer layers grown on GaAs by low-pressure metalorganic chemical vapor deposition. Two types of wirelike surface structures were observed from the layers grown at two different temperatures. Low-temperature photoluminescence (PL) and double-crystal x-ray diffractometric measurements indicate that the PL energy and the relaxation of the graded layers were strongly dependent on the top surface structure. InGaAs cap layers were grown on top of the graded buffer layers with a variation of indium composition. A strong PL signal was observed from the top region of the graded layer grown with a lattice-matched cap layer. It suggests that the top region of the grade, similar to a graded well structure, is compressively strained but is of high structural quality without dislocations.

  19. X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al{sub 2}O{sub 3}/InGaAs stacks

    SciTech Connect

    Shekhter, P.; Palumbo, F.; Cohen Weinfeld, K.; Eizenberg, M.

    2014-09-08

    In this work, the post-breakdown characteristics of metal gate/Al{sub 2}O{sub 3}/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al{sub 2}O{sub 3}/InGaAs and SiO{sub 2}/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.

  20. Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)

    NASA Astrophysics Data System (ADS)

    O'Brien, William A.; Qi, Meng; Yan, Lifan; Stephenson, Chad A.; Protasenko, Vladimir; Xing, Huili; Millunchick, Joanna M.; Wistey, Mark A.

    2015-05-01

    This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs and AlGaAs by high-temperature in situ annealing using molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs were observed by atom probe tomography, which revealed nearly spherical QDs with diameters approaching 10 nm and confirmed the complete absence of a wetting layer. Reflection high-energy electron diffraction and atomic force microscopy of Ge annealed under similar conditions on GaAs and Al0.3Ga0.7As surfaces revealed the gradual suppression of QD formation with decreasing Al-content of the buffer. To investigate the prospects of using encapsulated Ge dots for upconverting photovoltaics, in which photocurrent can still be generated from photons with energy less than the host bandgap, Ge QDs were embedded into the active region of III-V PIN diodes by MBE. It was observed that orders of magnitude higher short-circuit current is obtained at photon energies below the GaAs bandgap compared with a reference PIN diode without Ge QDs. These results demonstrate the promise of Ge QDs for upconverting solar cells and the realization of device-quality integration of group IV and III-V semiconductors.

  1. The influence of cell penetrating peptide branching on cellular uptake of QDs

    NASA Astrophysics Data System (ADS)

    Breger, Joyce; Delehanty, James; Susumu, Kimihiro; Anderson, George; Muttenhaler, Markus; Dawson, Philip; Medintz, Igor

    2016-03-01

    Semiconductor quantum dots (QDs) serve as a valuable platform for understating the intricacies of nanoparticle cellular uptake and fate for the development of theranostics. Developing novel internalization peptides that maximize cellular uptake while minimizing the amount of peptide is important to allow space on the nanoparticle for other cargo (e.g. drugs). We have designed a range of branched, dendritic internalization peptides composed of polyarginine (Arg9) branches (1 to 16 repeats) attached a dendritic wedge based on the sequence WP9G2H6. By attaching these branched dendritic peptides to QD's, we can study the influence of branching on cellular uptake as a function of time, ratio, and degree of branching.

  2. A low noise low power 512×256 ROIC for extended wavelength InGaAs FPA

    NASA Astrophysics Data System (ADS)

    Huang, Songlei; Huang, Zhangcheng; Chen, Yu; Li, Tao; Fang, Jiaxiong

    2015-05-01

    A low noise low power 512×256 readout integrated circuit (ROIC) based on Capacitance Trans-impedance Amplifier (CTIA) was designed in this paper. The ROIC with 30μm pixel-pitch and 70 fF integrated capacitance as normal structure and test structure capacitance from 5 to 60 fF, was fabricated in 0.5μm DPTM CMOS process. The results showed that output voltage was larger than 2.0V and power consumption was about 150mW, output ROIC noise was about 3.6E-4V which equivalent noise was 160e-, and the test structure noise was from 20e- to 140 e-. Compared the readout noises in Integration Then Readout (ITR) mode and Integration While Readout (IWR) mode, it indicated that in IWR mode, readout noise comes mainly from both integration capacitance and sampling capacitance, while in ITR mode, readout noise comes mostly from sampling capacitance. Finally the ROIC was flip-chip bonded with Indium bumps to extended wavelength InGaAs detectors with cutoff wavelength 2.5μm at 200K. The peak detectivity exceeded 5E11cmHz1/2/w with 70nA/cm2 dark current density at 200K.

  3. Thermophotovoltaic energy converters based on thin film selective emitters and InGaAs photovoltaic cells

    SciTech Connect

    Fatemi, N.S.; Hoffman, R.H.; Wilt, D.M.; Lowe, R.A.; Garverick, L.M.; Scheiman, D.

    1996-02-01

    This paper presents the results of an investigation to demonstrate thermophotovoltaic energy conversion using InGaAs photovoltaic cells, yttrium-aluminum-garnet- (YAG-) based selective emitters, and bandpass/reflector filters, with the heat source operating at 1100{degree}C. InGaAs cells were grown on InP by organometallic vapor phase epitaxy with bandgaps of 0.60 and 0.75 eV and coupled to Ho-, Er-, and Er-Tm-doped YAG selective emitters. Infrared reflector and/or shortpass filters were also used to increase the ratio of in-band to out-of-band radiation from the selective emitters. Efficiencies as high as 13.2{percent} were recorded for filtered converters. {copyright} {ital 1996 American Institute of Physics.}

  4. Low-Cost InGaAs Detectors for Near-Infrared Imaging and Photometry

    NASA Astrophysics Data System (ADS)

    Sullivan, Peter; Croll, B.; Simcoe, R. A.

    2014-01-01

    Near-infrared detectors made from InGaAs should provide an alternative to HgCdTe that is particularly cost-effective for arrays of small telescopes or for covering large focal planes. Originally designed for night-vision equipment, these detectors can be suitable for astronomy if they support long, up-the-ramp exposures and are cooled sufficiently. We developed custom electronics to operate the FLIR APS640C detector in a camera with thermoelectric and chilled-water cooling. We achieved differential photometric precision of 500 ppm (0.5 mmag) hr^-1/2 observing J=7.7 stars with an effective telescope aperture of 0.25 m. Laboratory results from the latest generation of InGaAs detectors will be presented, and we discuss the limits to achieving background-limited performance in the Y, J, and H bands on 1 m - class telescopes.

  5. Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography

    SciTech Connect

    Qian, X.; Li, J.; Wasserman, D.; Goodhue, W. D.

    2008-12-08

    We demonstrate the fabrication of optically active uniform InGaAs quantum dot arrays by combining nanosphere lithography and bromine ion-beam-assisted etching on a single InGaAs/GaAs quantum well. A wide range of lateral dot sizes was achieved from an oxygen plasma nanosphere resizing process. The increased lateral confinement of carriers in the dots results in low temperature photoluminescence blueshifts from 0.5 to 11 meV. Additional quantization was achieved using a selective wet-etch process. Our model suggests the presence of a 70 nm dead layer in the outer InGaAs radial edge, which we believe to be a result of defects and dislocations introduced during the dry-etch process.

  6. Border trap reduction in Al2O3/InGaAs gate stacks

    NASA Astrophysics Data System (ADS)

    Tang, Kechao; Winter, Roy; Zhang, Liangliang; Droopad, Ravi; Eizenberg, Moshe; McIntyre, Paul C.

    2015-11-01

    The effect of Al2O3 atomic layer deposition (ALD) temperature on the border trap density (Nbt) of Al2O3/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces Nbt. The reduction of Nbt coincides with increased hydrogen incorporation in low temperature ALD-grown Al2O3 films during post-gate metal forming gas annealing. It is also found that large-dose (˜6000 L) exposure of the In0.53Ga0.47As (100) surface to TMA immediately after thermal desorption of a protective As2 capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al2O3/InGaAs samples made at low ALD temperatures.

  7. InGaAs HEMT MMIC LINA and doublers for EHF SATCOM ground terminals

    NASA Astrophysics Data System (ADS)

    Chow, P. D.; Lester, J.; Huang, P.; Jones, W.

    1991-07-01

    A K-band MMIC LNA and a family of MMIC frequency doublers were designed and fabricated using the planar-doped pseudomorphic InGaAs HEMT technology for future EHF satellite communication terminal transceiver applications. The InGaAs HEMT LNA showed less than 2 dB noise figure and more than 32 dB gain from 21 to 23 GHz. The Ku-, K-, and Q-band MMIC HEMT doublers demonstrated low conversion loss and wideband operation. They showed 10 dBm, 8 dBm, and 0 dBm output powers, and 2.5 dB, 4.5 dB, and 8.6 dB conversion losses at 17.4 GHz, 22.25 GHz, and 43.5 GHz, respectively.

  8. Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon

    SciTech Connect

    Tran, T.-T. D.; Chen, R.; Ng, K. W.; Ko, W. S.; Lu, F.; Chang-Hasnain, C. J.

    2014-09-15

    As-grown InGaAs nanoneedle lasers, synthesized at complementary metal–oxide–semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes were observed upon optically pumping the needles above the lasing threshold. Using the radiation patterns as well as finite-difference-time-domain simulations and polarization measurements, all modal numbers of the three-dimensional whispering gallery modes could be identified.

  9. InGaAs focal plane array developments at III-V Lab

    NASA Astrophysics Data System (ADS)

    Rouvié, Anne; Reverchon, Jean-Luc; Huet, Odile; Djedidi, Anis; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Bria, Toufiq; Pires, Mauricio; Decobert, Jean; Costard, Eric

    2012-06-01

    SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. For few years, III-VLab has been studying InGaAs imagery, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has lead to put quickly on the market a 320x256 InGaAs module, exhibiting high performances in terms of dark current, uniformity and quantum efficiency. In this paper, we present the last developments achieved in our laboratory, mainly focused on increasing the pixels number to VGA format associated to pixel pitch decrease (15μm) and broadening detection spectrum toward visible wavelengths. Depending on targeted applications, different Read Out Integrated Circuits (ROIC) have been used. Low noise ROIC have been developed by CEA LETI to fit the requirements of low light level imaging whereas logarithmic ROIC designed by NIT allows high dynamic imaging adapted for automotive safety.

  10. InGaAs concentrator cells for laser power converters and tandem cells

    NASA Technical Reports Server (NTRS)

    Wojtczuk, S.; Vernon, S.; Gagnon, E.

    1993-01-01

    In(0.53)Ga(0.47)As N-on-P concentrator cells were made as part of an effort to develop 1.315 micron laser power converters. The 1.315 micron laser power conversion efficiency was estimated as 29.4 percent (at 5.57 W/cm(sup 2)) based on an 86 percent measured external quantum efficiency at 1.315 microns, and a measured open circuit voltage (484 mV), and fill-factor (67 percent) at the equivalent AM0 short-circuit photocurrent (5.07 A/cm(sup 2)). A 13.5 percent percent AMO efficiency was achieved at 89 suns and 25 C. Measured one-sun and 100-sun AMO efficiency, log I-V analysis, and quantum efficiency are presented for InGaAs cells with and without InP windows to passivate the front surface. Windowed cells performed better at concentration than windowless cells. Lattice mismatch between InGaAs epilayers and InP substrate was less than 800 ppm. Theoretical efficiency is estimated for 1.315 microns laser power converters versus the bandgap energy. Adding aluminum to InGaAs to form In(x)Al(y)Ga(1-x-y)As is presented as a way to achieve an optimal bandgap for 1.315 microns laser power conversion.

  11. Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22)

    NASA Technical Reports Server (NTRS)

    Tatsumi, Masami

    1993-01-01

    Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where InGaAs

  12. Upconversion Nanoparticles for Security Printing and CdSe QDs for Drug Delivery Applications

    NASA Astrophysics Data System (ADS)

    Baride, Aravind

    demonstrated NIR light induced release of a target molecule, coumarin, from functionalized quantum dots. Coumarin, a model drug molecule, is released upon NIR two-photon excitation of cinnamate capped CdSe QDs. Electron transfer from the excited QD to the cinnamate ligand induces the release of coumarin. The electron transfer across the QD to the cinnamate ligand is confirmed by evaluation of uncaging activity in the cinnamate capped CdSe/ZnS core-shell QDs.

  13. Femtosecond insights into direct electron injection in dye anchored ZnO QDs following charge transfer excitation.

    PubMed

    Kumar, Pushpendra; Kumar, Sunil; Ghosh, Subrata; Pal, Suman Kalyan

    2016-07-27

    The role of the charge transfer (CT) state in interfacial electron transfer in dye-sensitized semiconductor nanocrystals is still poorly understood. To address this problem, femtosecond transient absorption (TA) spectroscopy is used as a probe to investigate the electron injection across a newly synthesized coumarin dye (8-hydroxy-2-oxo-4-phenyl-2 benzo[h]chromene-3-carbonitrile, coded BC5) and ZnO quantum dots (QDs). Steady state and time-resolved spectroscopic measurements reveal that BC5 dye interacts strongly with ZnO QDs in the ground state forming a CT complex. The BC5-ZnO QD complex absorbs more towards red compared to only the dye and QDs, and emits fluorescence due to radiative recombination of photogenerated charges. The formation of charges following the excitation of the CT complex has been demonstrated by observing the signature of dye radical cations and electrons in the conduction band (CB) of the QDs in the TA spectra. The TA signals of these charges grow sharply as a result of ultrafast direct electron injection into the QD. We have monitored the complete dynamics of photogenerated charges by measuring the TA signals of the charges up to a couple of nanoseconds. The injected electrons that are free or shallowly trapped recombine with a time constant of 625 fs, whereas deeply trapped electrons disappear slowly (526 ps) via radiative recombination. Furthermore, theoretical studies based on ab initio calculations have been carried out to complement the experimental findings. PMID:27412034

  14. Ultrasensitive fluorescence immunoassay for detection of ochratoxin A using catalase-mediated fluorescence quenching of CdTe QDs.

    PubMed

    Huang, Xiaolin; Zhan, Shengnan; Xu, Hengyi; Meng, Xianwei; Xiong, Yonghua; Chen, Xiaoyuan

    2016-04-28

    Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to perform a dynamic linear detection of OTA ranging from 0.05 pg mL(-1) to 10 pg mL(-1). The half maximal inhibitory concentration was 0.53 pg mL(-1) and the limit of detection was 0.05 pg mL(-1). These values were approximately 283- and 300-folds lower than those of horseradish peroxidase (HRP)-based conventional ELISA, respectively. The reported method is accurate, highly reproducible, and specific against other mycotoxins in agricultural products as well. In summary, the developed fluorescence immunoassay based on H2O2-induced fluorescence quenching of CdTe QDs can be used for the rapid and highly sensitive detection of mycotoxins or haptens in food safety monitoring. PMID:27093176

  15. Imaging of the GI tract by QDs loaded heparin-deoxycholic acid (DOCA) nanoparticles.

    PubMed

    Khatun, Zehedina; Nurunnabi, Md; Cho, Kwang Jae; Lee, Yong-kyu

    2012-11-01

    This study presents an approach to deliver non invasive, near-IR imaging agent using oral delivery system. Low molecular weight heparin (LMWH)-deoxycholic acid (DOCA)/(LHD) nanoparticles formed by a self-assembly method was prepared to evaluate their physicochemical properties and oral absorption in vitro and in vivo. Near-IR QDs were prepared and loaded into LHD nanoparticles for imaging of the gastro-intestinal (GI) tract absorption. Q-LHD nanoparticles were almost spherical in shape with diameters of 194-217 nm. The size and fluorescent intensity of the Q-LHD nanoparticles were stable in 10% FBS solution and retained their fluorescent even after 5 days of incubation. Cell viability of Q-LHD nanoparticles maintained in the range of 80-95% for 24h incubation. No damage was found in tissues or organs during animal experiments. The in vivo oral absorption of Q-LHD was observed in SKH1 mice for 3h under different doses. From the results, we confirmed that Q-LHD was absorbed mostly into the ileum of small intestine containing intestinal bile acid transporter as observed in TEM and molecular imaging system. Our designed nanoparticles could be administered orally for bio-imaging and studying the bio-distribution of drug. PMID:22944403

  16. Single mode 1.3 μm InGaAs VCSELs for access network applications

    NASA Astrophysics Data System (ADS)

    Westbergh, Petter; Söderberg, Emma; Gustavsson, Johan S.; Modh, Peter; Larsson, Anders; Zhang, Zhenzhong; Berggren, Jesper; Hammar, Mattias

    2008-04-01

    GaAs-based VCSELs emitting near 1.3 μm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dB•Hz 2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.

  17. Study on the Infrared Lens-Free Irradiation Thermometer Based on InGaAs Detector at NIM

    NASA Astrophysics Data System (ADS)

    Hao, X. P.; Yuan, Z. D.; Huang, S. Y.; Song, J.; Xu, K.

    2015-12-01

    A lens-free irradiation thermometer (LF-IRRT) designed for laboratory applications, with 1.55 \\upmu m center wavelength based on the InGaAs detector, and a temperature range from 300° C to 1000° C, has been developed at NIM of China. The thermometer has no imaging optics for collecting the radiation, for which a major benefit is improved stability compared to other radiation thermometers. This paper introduces the measurement principle, the structure of the LF-IRRT, the multiple-point calibration method, and the stability and expanded uncertainty of the thermometer. The stability of the LF-IRRT is better than 0.070° C at temperatures from 300° C to 1000° C over a period of 1 month. The expanded uncertainty is less than 0.20° C for temperatures between 300° C and 1000° C. The size-of-source effect of the LF-IRRT is 0.6 % from the source diameter range from 10 mm to 65 mm.

  18. InGaAs self-assembly quantum dot for high-speed 1300 nm electroabsorption modulator

    NASA Astrophysics Data System (ADS)

    Lin, Chuan-Han; Wu, Jui-pin; Kuo, Yu-zheng; Chiu, Yi-jen; Tzeng, T. E.; Lay, T. S.

    2011-05-01

    In this paper, a new type of high-speed electroabsorption modulator (EAM) based on quantum dot (QD) p-i-n heterostructure is demonstrated. The QD layers sandwiched by p-AlGaAs and n-AlGaAs are grown by multilayer InGaAs self-assembled QD with luminance wavelength of 1300 nm, serving as the active region of EAM. The photocurrent spectrum measurement exhibits a red shift of 15 nm in QD transition energy levels on biasing from 0 to 6 V. A quadratic relation of energy shift against the reversed bias is extracted, confirming the quantum-confined Stark effect (QCSE) in QD. On fabricating a 300 μm long EAM, as high as DC 5 dB extinction ratio by 6 V voltage swing at 1310 nm is observed. As compared with well-developed quantum well (QW) EAM (well thickness ∼10 nm) of the same length, the lower density of states still shows the same order of magnitude in extinction ratio, suggesting strong QCSE in such 3-dimensional confined QD. An electrical-to-optical conversion with -3 dB bandwidth of 3.3 GHz is also attained in such QD EAM, where the speed is mainly limited by the parasitic capacitance on substrate. It implies that through optimization of QD and device structures, the advantages of QD properties are quite promising to be used in high-speed optoelectronic fields.

  19. Albumin-Mediated Biomineralization of Paramagnetic NIR Ag2S QDs for Tiny Tumor Bimodal Targeted Imaging in Vivo.

    PubMed

    Zhang, Jing; Hao, Guangyu; Yao, Chenfei; Yu, Jiani; Wang, Jun; Yang, Weitao; Hu, Chunhong; Zhang, Bingbo

    2016-07-01

    Bimodal imaging has captured increasing interests due to its complementary characteristics of two kinds of imaging modalities. Among the various dual-modal imaging techniques, MR/fluorescence imaging has been widely studied owing to its high 3D resolution and sensitivity. There is, however, still a strong demand to construct biocompatible MR/fluorescence contrast agents with near-infrared (NIR) fluorescent emissions and high relaxivities. In this study, BSA-DTPA(Gd) derived from bovine serum albumin (BSA) as a novel kind of biotemplate is employed for biomineralization of paramagnetic NIR Ag2S quantum dots (denoted as Ag2S@BSA-DTPA(Gd) pQDs). This synthetic strategy is found to be bioinspired, environmentally benign, and straightforward. The obtained Ag2S@BSA-DTPA(Gd) pQDs have fine sizes (ca. 6 nm) and good colloidal stability. They exhibit unabated NIR fluorescent emission (ca. 790 nm) as well as high longitudinal relaxivity (r1 = 12.6 mM(-1) s(-1)) compared to that of commercial Magnevist (r1 = 3.13 mM(-1) s(-1)). In vivo tumor-bearing MR and fluorescence imaging both demonstrate that Ag2S@BSA-DTPA(Gd) pQDs have pronounced tiny tumor targeting capability. In vitro and in vivo toxicity study show Ag2S@BSA-DTPA(Gd) pQDs are biocompatible. Also, biodistribution analysis indicates they can be cleared from body mainly via liver metabolism. This protein-mediated biomineralized Ag2S@BSA-DTPA(Gd) pQDs presents great potential as a novel bimodal imaging contrast agent for tiny tumor diagnosis. PMID:27300300

  20. The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-05-01

    Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon—disorder induced gap states and border traps. While the gap states are located at the semiconductor side of the interface, the border traps are related to the dielectric side. The study of Al2O3, HfO2, and an intermediate composition of HfxAlyO deposited on InGaAs enabled us to find a correlation between the dispersion and the dielectric/InGaAs band offset. At the same time, no change in the dispersion was observed after applying an effective pre-deposition treatment which results in significant reduction of the interface states. Both observations prove that border traps are the physical origin of the dispersion in accumulation in InGaAs based metal-oxide-semiconductor gate stacks.

  1. Development of a large area InGaAs APD receiver based on an impact ionization engineered detector for free-space lasercomm applications

    NASA Astrophysics Data System (ADS)

    Burris, H. R.; Ferraro, M. S.; Freeman, W. T.; Moore, C. I.; Murphy, J. L.; Rabinovich, W. S.; Smith, W. R.; Summers, L. L.; Thomas, L. M.; Vilcheck, M. J.; Clark, W. R.; Waters, W. D.

    2012-06-01

    The U.S. Naval Research Laboratory (NRL) is developing a small size, weight and power (SWaP) free space lasercomm terminal for small unmanned airborne platforms. The terminal is based on a small gimbal developed by CloudCap Technology. A receiver with a large field of view and with sensitivity sufficient to meet the program range goals is required for this terminal. An InGaAs Avalanche Photodiode (APD) with internal structures engineered to reduce excess noise and keff in high gain applications was selected as the detector. The detector is a 350 micron diameter impact ionization engineered (I2E) APD developed by Optogration, Inc. Results of development and characterization of the receiver will be presented.

  2. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm

    SciTech Connect

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Müller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 20–40 nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1 nm and 5 nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  3. Threshold Dose of Three Types of Quantum Dots (QDs) Induces Oxidative Stress Triggers DNA Damage and Apoptosis in Mouse Fibroblast L929 Cells

    PubMed Central

    Zhang, Ting; Wang, Yiqing; Kong, Lu; Xue, Yuying; Tang, Meng

    2015-01-01

    Although it has been reported that fluorescent quantum dots (QDs) have obvious acute toxic effects in vitro, their toxic effects at low doses or threshold doses are still unknown. Therefore, we evaluated the biological histocompatibility and in vitro toxicity of three types of QDs at threshold doses. Also, we compared the toxic effects of QDs with different raw chemical compositions and sizes. The results showed that low concentrations of QDs (≤7 μg/mL) had no obvious effect on cell viability and cell membrane damage, oxidative damage, cell apoptosis or DNA damage. However, QD exposure led to a significant cytotoxicity at higher doses (≥14 μg/mL) and induced abnormal cellular morphology. In addition, when comparing the three types of QDs, 2.2 nm CdTe QDs exposure showed a significantly increased proportion of apoptotic cells and significant DNA damage, suggesting that size and composition contribute to the toxic effects of QDs. Based on these discussions, it was concluded that the concentration (7 μg/mL) may serve as a threshold level for these three types of QDs only in L929 fibroblasts, whereas high concentrations (above 14 μg/mL) may be toxic, resulting in inhibition of proliferation, induction of apoptosis and DNA damage in L929 fibroblasts. PMID:26516873

  4. Precision of a Low-Cost InGaAs Detector for Near Infrared Photometry

    NASA Astrophysics Data System (ADS)

    Sullivan, Peter W.; Croll, Bryce; Simcoe, Robert A.

    2013-09-01

    We have designed, constructed, and tested an InGaAs near-infrared camera to explore whether low-cost detectors can make small (<= 1 m) telescopes capable of precise (< 1 mmag) infrared photometry of relatively bright targets. The camera is constructed around the 640 × 512 pixel APS640C sensor built by FLIR Electro-Optical Components. We designed custom analog-to-digital electronics for maximum stability and minimum noise. The InGaAs dark current halves with every 7°C of cooling, and we reduce it to 840 e- s-1 pixel-1 (with a pixel-to-pixel variation of ± 200 e- s-1 pixel-1) by cooling the array to -20°C. Beyond this point, glow from the readout dominates. The single-sample read noise of 149 e- is reduced to 54 e- through up-the-ramp sampling. Laboratory testing with a star field generated by a lenslet array shows that two-star differential photometry is possible to a precision of 631 ± 205 ppm (0.68 mmag) hr-1/2 at a flux of 2.4 × 104 e- s-1. Employing three comparison stars and decorrelating reference signals further improves the precision to 483 ± 161 ppm (0.52 mmag) hr-1/2. Photometric observations of HD80606 and HD80607 (J = 7.7 and 7.8) in the Y band shows that differential photometry to a precision of 415 ppm (0.45 mmag) hr-1/2 is achieved with an effective telescope aperture of 0.25 m. Next-generation InGaAs detectors should indeed enable Poisson-limited photometry of brighter dwarfs with particular advantage for late-M and L types. In addition, one might acquire near-infrared photometry simultaneously with optical photometry or radial velocity measurements to maximize the return of exoplanet searches with small telescopes.

  5. InGaAs versus HgCdTe for short-wavelength infrared applications

    NASA Astrophysics Data System (ADS)

    Rogalski, Antoni; Ciupa, Robert

    1999-04-01

    The carrier lifetimes in In(subscript x)Ga(subscript 1-x)As (InGaAs) and Hg(subscript 1-x)Cd(subscript x)Te (HgCdTe) ternary alloys for radiative and Auger recombination are calculated for temperature 300 K in the short wavelength range 1.5 less than (lambda) less than 3.7 micrometer. Due to photon recycling, an order of magnitude enhancements in the radiative lifetimes over those obtained from the standard van Roosbroeck and Shockley expression, has been assumed. This theoretical prediction has been confirmed by good agreement with experimental data for n-type In(subscript 0.53)Ga(subscript 0.47)As. The possible Auger recombination mechanisms (CHCC, CHLH and CHSH processes) in direct-gap semiconductors are investigated. In both n-type ternary alloys, the carrier lifetimes are similar, and competition between radiative and CHCC processes take place. In p-type materials the carrier lifetime are also comparable, however the most effective channels of Auger mechanisms are: CHSH process in InGaAs, and CHLH process in HgCdTe. Next, the performance of heterostructure p-on-n photovoltaic devices are considered. Theoretically predicted R(subscript o)A values are compared with experimental data reported by other authors. In(subscript 0.53)Ga(subscript 0.47)As photodiodes have shown the device performance within a factor of 10 of theoretical limit. However, the performance of InGaAs photodiodes decreases rapidly at intermediate wavelengths due to mismatch-induced defects. HgCdTe photodiodes maintain high performance close to ultimate limit over a wider range of wavelengths. In this context technology of HgCdTe is considerably advanced since the same lattice parameter of this alloy over wide composition range.

  6. Monolithic integration of 1.3-μm InGaAs photodetectors and high-electron-mobility transistor (HEMT) electronic circuits on GaAs

    NASA Astrophysics Data System (ADS)

    Fink, Thomas; Hurm, Volker; Raynor, Brian; Koehler, Klaus; Benz, Willy; Ludwig, M.

    1995-04-01

    For the first time, monolithic optoelectronic receivers for a wavelength of 1.3 micrometers have been fabricated successfully on GaAs substrates using InGaAs metal-semiconductor-metal (MSM) photodiodes and AlGaAs/GaAs/AlGaAs high-electron-mobility transistors (HEMTs). Using molecular beam epitaxy (MBE), the photodetector layers were grown on top of a double (delta) -doped AlGaAs/GaAs/AlGaAs HEMT structure which allows the fabrication of enhancement and depletion field effect transistors. The photoabsorbing InGaAs layer was grown at 500 degree(s)C. To fabricate the optoelectronic receivers, first, an etch process using a combination of non-selective wet etching and selective reactive ion etching was applied to produce mesas for the photoconductors and to uncover the HEMT structure in all other areas. For the electronic circuits, our well-established HEMT process for 0.3-micrometers transistor gates was used which includes electron-beam lithography for gate definition and optical lithography for NiCr thin films resistors, capacitors, and inductors. The interdigitated MSM photodiode fingers were also fabricated using electron-beam lithography. For interconnecting the electronic circuits and the photodetectors, air bridges were employed. The entire process was performed on 2-inch wafers with more than 90% yield of functional receivers. The finished receiver--basically an MSM photodetector linked to a transimpedance amplifier--is operational at an incident wavelength of 1.3 micrometers at data rates up to 1.2 Gbit/s. The sensitivity of the detectors is 0.16 A/W at a 10 V bias.

  7. An amplified electrochemical strategy using DNA-QDs dendrimer superstructure for the detection of thymine DNA glycosylase activity.

    PubMed

    Liu, Hongying; Lou, Youbing; Zhou, Fei; Zhu, Hao; Abdel-Halim, E S; Zhu, Jun-Jie

    2015-09-15

    A triple-signal amplification strategy was proposed for highly sensitive and selective detection of thymine DNA glycosylase (TDG) by coupling a dendrimer-like DNA label with the electrochemical method and quantum dots (QDs) tagging. The DNA-QDs dendrimer-like superstructure was designed by DNA hybridization and covalent assembling. Benefiting from outstanding performance of the amplification strategy, this assay showed high sensitivity, extraordinary stability, and easy operation. The limit of detection could reach 0.00003 U µL(-1) with a splendid specificity. The TDG content in different concentration of HeLa cell was also determined. This assay opens a new horizon for both qualitative and quantitative detection of TDG, holding great promise for potential application in cancer cell research and clinical diagnostics. PMID:25913445

  8. Ultrasensitive fluorescence immunoassay for detection of ochratoxin A using catalase-mediated fluorescence quenching of CdTe QDs

    NASA Astrophysics Data System (ADS)

    Huang, Xiaolin; Zhan, Shengnan; Xu, Hengyi; Meng, Xianwei; Xiong, Yonghua; Chen, Xiaoyuan

    2016-04-01

    Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to perform a dynamic linear detection of OTA ranging from 0.05 pg mL-1 to 10 pg mL-1. The half maximal inhibitory concentration was 0.53 pg mL-1 and the limit of detection was 0.05 pg mL-1. These values were approximately 283- and 300-folds lower than those of horseradish peroxidase (HRP)-based conventional ELISA, respectively. The reported method is accurate, highly reproducible, and specific against other mycotoxins in agricultural products as well. In summary, the developed fluorescence immunoassay based on H2O2-induced fluorescence quenching of CdTe QDs can be used for the rapid and highly sensitive detection of mycotoxins or haptens in food safety monitoring.Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to

  9. CdS QDs-chitosan microcapsules with stimuli-responsive property generated by gas-liquid microfluidic technique.

    PubMed

    Chen, Yanjun; Yao, Rongyi; Wang, Yifeng; Chen, Ming; Qiu, Tong; Zhang, Chaocan

    2015-01-01

    This article describes a straightforward gas-liquid microfluidic approach to generate uniform-sized chitosan microcapsules containing CdS quantum dots (QDs). CdS QDs are encapsulated into the liquid-core of the microcapsules. The sizes of the microcapsules can be conveniently controlled by gas flow rate. QDs-chitosan microcapsules show good fluorescent stability in water, and exhibit fluorescent responses to chemical environmental stimuli. α-Cyclodextrin (α-CD) causes the microcapsules to deform and even collapse. More interestingly, α-CD induces obvious changes on the fluorescent color of the microcapsules. However, β-cyclodextrin (β-CD) has little influence on the shape and fluorescent color of the microcapsules. Based on the results of scanning electron microscopy, the possible mechanism about the effects of α-CD on the chitosan microcapsules is analyzed. These stimuli-responsive microcapsules are low-cost and easy to be prepared by gas-liquid microfluidic technique, and can be applied as a potential micro-detector to chemicals, such as CDs. PMID:25460598

  10. Developing a fluorescence-coupled capillary electrophoresis based method to probe interactions between QDs and colorectal cancer targeting peptides.

    PubMed

    Liu, Feifei; Wang, Jianhao; Yang, Li; Liu, Li; Ding, Shumin; Fu, Minli; Deng, Linhong; Gao, Li-Qian

    2016-08-01

    As is well known, quantum dots (QDs) have become valuable probes for cancer imaging. In particular, QD-labeled targeting peptides are capable of identifying cancer or tumors cells. A new colorectal cancer targeting peptide, cyclo(1, 9)-CTPSPFSHC, has strong targeting ability and also shows great potential in the identification and treatment of colon cancer. Herein, we synthesized a dual functional polypeptide, cyclo(1, 9)-CTPSPFSHCD2 G2 DP9 G3 H6 (H6 -TCP), to investigate its interaction with QDs inside the capillary. Fluorescence-coupled CE was adopted and applied to characterize the self-assembly of H6 -TCP onto QDs. It was indicated that the formation of the assembly was affected by H6 -TCP/QD molar ratio and sampling time. This novel in-capillary assay greatly reduced the sample consumption and the detection time, which was beneficial for the environment. It is expected that this kind of detection method could find more applications to provide more useful information for cancer diagnosis and detection of harm and hazardous substances/organisms in the environment in the future. PMID:27159348

  11. Near-infrared InGaAs detectors for background-limited imaging and photometry

    NASA Astrophysics Data System (ADS)

    Sullivan, Peter W.; Croll, Bryce; Simcoe, Robert A.

    2014-07-01

    Originally designed for night-vision equipment, InGaAs detectors are beginning to achieve background-limited performance in broadband imaging from the ground. The lower cost of these detectors can enable multi-band instruments, arrays of small telescopes, and large focal planes that would be uneconomical with high-performance HgCdTe detectors. We developed a camera to operate the FLIR AP1121 sensor using deep thermoelectric cooling and up-the-ramp sampling to minimize noise. We measured a dark current of 163 e- s-1 pix-1, a read noise of 87 e- up-the-ramp, and a well depth of 80k e-. Laboratory photometric testing achieved a stability of 230 ppm hr-1/2, which would be required for detecting exoplanet transits. InGaAs detectors are also applicable to other branches of near-infrared time-domain astronomy, ranging from brown dwarf weather to gravitational wave follow-up.

  12. Logarithmic InGaAs detectors with global shutter and active dark current reduction

    NASA Astrophysics Data System (ADS)

    Ni, Yang; Arion, Bogdan; Bouvier, Christian; Noguier, Vincent

    2015-05-01

    In this paper, we present newly developed logarithmic InGaAs detectors with global shuttering and also an active dark current reduction technique to ensure ambient temperature operation without TEC for industrial applications. The newly released detectors come with both VGA (15um pitch) and QVGA (25um pitch) resolutions, giving the possibility to use lens less than 1-inch size. The logarithmic response is obtained by using solar-cell mode InGaAs photodiodes. The VGA and QVGA ROICs have 3 analog memories inside each pixel which permit, except the classic ITR, IWR and CDS modes, a new differential imaging mode which can be a useful feature in active imaging systems. The photodiode frontend circuit, in pure voltage mode, is made with non-inverting amplifier instead of CTIA. The reason of this choice is that the exposure time can be shortened without need of excessive power consumption as in CTIA front-end. We think that this arrangement associated with true CDS could match the noise performance of CTIA based one. VGA and QVGA ROICs have been designed and manufactured by using 0.18um 1P4M CMOS process. Both ROIC have been tested with success and match the design targets. The first batch of both detectors is under fabrication and will be presented during the conference.

  13. Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy

    SciTech Connect

    France, R.; Ptak, A. J.; Jiang, C.-S.; Ahrenkiel, S. P.

    2010-05-15

    InGaAs strain relaxation is studied by an in situ multibeam optical stress sensor (MOSS). Strain relaxation during growth of InGaAs on GaAs occurs at different thicknesses and rates along the directions perpendicular to its misfit dislocations, [110] and [110]. We show the asymmetry of relaxation between these directions in real time by aligning the MOSS laser array along [110] and [110]. This asymmetric relaxation data from the MOSS correlates with both x-ray diffraction relaxation analysis and an estimation of the misfit dislocation density from transmission electron microscopy images. Lowering the V/III ratio or raising the growth temperature lowers the thickness of the onset of dislocation formation, changes the relaxation rate, lowers the final relaxation during 2 {mu}m of growth, and shifts the initial direction of relaxation from [110] to [110]. We identify two phases of relaxation that occur at different growth thicknesses. Lowering the V/III ratio changes the relative contribution of each of these phases to the total relaxation of the epilayer.

  14. Multifunction InGaAs detector with on-chip signal processing

    NASA Astrophysics Data System (ADS)

    Shkedy, Lior; Fraenkel, Rami; Fishman, Tal; Giladi, Avihoo; Bykov, Leonid; Grimberg, Ilana; Ilan, Elad; Vaserman, Shay; Koifman, Alina

    2013-06-01

    Advanced electro-optical systems are designed towards a more compact, low power, and low cost solution with respect to traditional systems. Integration of several components or functionalities, such as infrared imager, laser designator, laser range finder (LRF), into one multi-function detector serves this trend. SNIR Read-Out Integrated Circuit (ROIC) incorporates this high level of signal processing and with relatively low power consumption. In this paper we present measurement results from a Focal Plane Array (FPA) where the SNIR ROIC is Flip-Chip bonded to a 15µm pitch VGA InGaAs detector array. The FPA is integrated into a metallic vacuum sealed package. We present InGaAs arrays with dark current density below 1.5 nA/cm2 at 280K (typically 1fA), Quantum Efficiency higher than 80% at 1550 nm and operability better than 99.5%. The metallic package is integrated with a low power proximity electronics which delivers Camera Link output. The overall power dissipation is less than 1W, not including Thermal-Electric Cooling (TEC), which is required in some applications. The various active and passive operation modes of this detector will be reviewed. Specifically, we concentrate on the "high gain" mode with low readout noise for Low Light Level imaging application. Another promising feature is the Asynchronous Laser Pulse Detection (ALPD) with remarkably low detection thresholds.

  15. Cadmium telluride quantum dots (CdTe-QDs) and enhanced ultraviolet-B (UV-B) radiation trigger antioxidant enzyme metabolism and programmed cell death in wheat seedlings.

    PubMed

    Chen, Huize; Gong, Yan; Han, Rong

    2014-01-01

    Nanoparticles (NPs) are becoming increasingly widespread in the environment. Free cadmium ions released from commonly used NPs under ultraviolet-B (UV-B) radiation are potentially toxic to living organisms. With increasing levels of UV-B radiation at the Earth's surface due to the depletion of the ozone layer, the potential additive effect of NPs and UV-B radiation on plants is of concern. In this study, we investigated the synergistic effect of CdTe quantum dots (CdTe-QDs), a common form of NP, and UV-B radiation on wheat seedlings. Graded doses of CdTe-QDs and UV-B radiation were tested, either alone or in combination, based on physical characteristics of 5-day-old seedlings. Treatments of wheat seedlings with either CdTe-QDs (200 mg/L) or UV-B radiation (10 KJ/m(2)/d) induced the activation of wheat antioxidant enzymes. CdTe-QDs accumulation in plant root cells resulted in programmed cell death as detected by DNA laddering. CdTe-QDs and UV-B radiation inhibited root and shoot growth, respectively. Additive inhibitory effects were observed in the combined treatment group. This research described the effects of UV-B and CdTe-QDs on plant growth. Furthermore, the finding that CdTe-QDs accumulate during the life cycle of plants highlights the need for sustained assessments of these interactions. PMID:25329900

  16. Short wave infrared InGaAs focal plane arrays detector: the performance optimization of photosensitive element

    NASA Astrophysics Data System (ADS)

    Gao, Xin-jiang; Tang, Zun-lie; Zhang, Xiu-chuan; Chen, Yang; Jiang, Li-qun; Cheng, Hong-bing

    2009-07-01

    Significant progress has been achieved in technology of the InGaAs focal plane arrays (FPA) detector operating in short wave infrared (SWIR) last two decades. The no cryogenic cooling, low manufacturing cost, low power, high sensitivity and maneuverability features inherent of InGaAs FPA make it as a mainstream SWIR FPA in a variety of critical military, national security, aerospace, telecommunications and industrial applications. These various types of passive image sensing or active illumination image detecting systems included range-gated imaging, 3-Dimensional Ladar, covert surveillance, pulsed laser beam profiling, machine vision, semiconductor inspection, free space optical communications beam tracker, hyperspectroscopy imaging and many others. In this paper the status and perspectives of hybrid InGaAs FPA which is composed of detector array (PDA) and CMOS readout integrate circuit (ROIC) are reviewed briefly. For various low light levels applications such as starlight or night sky illumination, we have made use of the interface circuit of capacitive feedback transimpedance amplifier (CTIA) in which the integration capacitor was adjustable, therefore implements of the physical and electrical characteristics matches between detector arrays and readout intergrate circuit was achieved excellently. Taking into account the influences of InGaAs detector arrays' optoelectronic characteristics on performance of the FPA, we discussed the key parameters of the photodiode in detailed, and the tradeoff between the responsivity, dark current, impedance at zero bias and junction capacitance of photosensitive element has been made to root out the impact factors. As a result of the educed approach of the photodiode's characteristics optimizing which involve with InGaAs PDA design and process, a high performance InGaAs FPA of 30um pixel pitch and 320×256 format has been developed of which the response spectrum range over 0.9um to 1.7um, the mean peak detectivity (λ=1.55

  17. Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

    NASA Technical Reports Server (NTRS)

    Forbes, David; Sinharoy, Samar; Raffalle, Ryne; Weizer, Victor; Homann, Natalie; Valko, Thomas; Bartos,Nichole; Scheiman, David; Bailey, Sheila

    2007-01-01

    Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

  18. Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs

    SciTech Connect

    Salii, R. A.; Mintairov, S. A.; Brunkov, P. N.; Nadtochiy, A. M.; Payusov, A. S.; Kalyuzhnyy, N. A.

    2015-08-15

    The specific features of growth in the InAs-GaAs system by the metal-organic chemical vapor deposition method are studied. The dependences of the In content of the InxGa{sub 1−x}As solid solution and of the InAs growth rate on the molar flow of In in a wide temperature range (480–700°C) are determined. The growth processes of InAs quantum dots (QDs) on GaAs with different surface misorientations are examined. The conditions are found in which InAs QDs are formed with a small number of defects and at a high density on a GaAs “sublayer” grown at a high rate. An epitaxial technique is developed for the synthesis of InAs QDs with multimodal size distribution and an extended photoluminescence spectrum, which can be effectively used in designing solar cells with QDs in the active region.

  19. Dually enriched Cu:CdS@ZnS QDs with both polyvinylpyrrolidone twisting and SiO2 loading for improved cell imaging.

    PubMed

    Li, Mei; Xu, Chaoying; Wu, Lan; Wu, Peng; Hou, Xiandeng

    2015-02-28

    Through harvesting of the increased Stokes shift of CdS QDs via Cu-doping, the concentration-quenching or aggregation-quenching of CdS QDs was largely alleviated. A dually-enriched strategy with both polyvinylpyrrolidone (PVP) twisting and SiO2 loading was developed for generating a highly luminescent doped-dots (d-dots) assembly for improved cell imaging. PMID:25626901

  20. Carrier dynamics in InGaAs with embedded ErAs nanoislands

    SciTech Connect

    Azad, Abul K.; Prasankumar, Rohit P.; Talbayev, Diyar; Taylor, Antoinette J.; O'Hara, John F.; Averitt, Richard D.; Zide, Joshua M. O.; Lu Hong; Gossard, Arthur C.

    2008-09-22

    Using time-resolved optical-pump terahertz-probe spectroscopy, we study the ultrafast carrier dynamics in In{sub 0.53}Ga{sub 0.47}As:ErAs, a potential candidate for 1550 nm based terahertz photoconductive detectors. Material growth is performed by codepositing ErAs nanoislands with Be-compensated InGaAs on an InP:Fe substrate using molecular beam epitaxy. The material shows a rapid photoconductivity response following optical excitation. Photoexcitation with {approx}0.5 {mu}J/cm{sup 2} 800 nm femtosecond laser pulses yields a 3.2 ps carrier lifetime in optical-pump terahertz-probe experiments. We also measure the carrier lifetime using a 1550 nm femtosecond optical pump-probe system, and it is found to agree well with the terahertz measurements. These short lifetimes demonstrate significant potential for implementing terahertz systems using telecommunication based technologies.

  1. InGaAs spin light emitting diodes measured in the Faraday and oblique Hanle geometries

    NASA Astrophysics Data System (ADS)

    Mansell, R.; Laloë, J.-B.; Holmes, S. N.; Petrou, A.; Farrer, I.; Jones, G. A. C.; Ritchie, D. A.; Barnes, C. H. W.

    2016-04-01

    InGaAs quantum well light emitting diodes (LED) with spin-injecting, epitaxial Fe contacts were fabricated using an in situ wafer transfer process where the semiconductor wafer was transferred under ultrahigh vacuum (UHV) conditions to a metals growth chamber to achieve a high quality interface between the two materials. The spin LED devices were measured optically with applied magnetic fields in either the Faraday or the oblique Hanle geometries in two experimental set-ups. Optical polarizations efficiencies of 4.5% in the Faraday geometry and 1.5% in the Hanle geometry are shown to be equivalent. The polarization efficiency of the electroluminescence is seen to decay as the temperature increases although the spin lifetime remains constant due to the influence of the D’yakonov–Perel’ spin scattering mechanism in the quantum well.

  2. InGaAs PV Device Development for TPV Power Systems

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fatemi, Navid S.; Hoffman, Richard W., Jr.; Jenkins, Phillip P.; Scheiman, David; Lowe, Roland; Landis, Geoffrey A.

    1994-01-01

    Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

  3. InGaAs PV device development for TPV power systems

    SciTech Connect

    Wilt, D.M.; Fatemi, N.S.; Hoffman, R.W. Jr.; Jenkins, P.P.; Brinker, D.J.; Scheiman, D.; Lowe, R.A.; Chubb, D.

    1994-09-01

    Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

  4. InGaAs PV device development for TPV power systems

    SciTech Connect

    Wilt, D.M.; Fatemi, N.S.; Hoffman, R.W. Jr.; Jenkins, P.P.; Scheiman, D.; Lowe, R.; Landis, G.A.

    1994-08-01

    Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

  5. InGaAs PV device development for TPV power systems

    SciTech Connect

    Wilt, D.M.; Fatemi, S.; Hoffman, R.W. Jr.; Jenkins, P.P.; Scheiman, D.; Lowe, R.; Landis, G.A.

    1995-01-05

    Indium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2% (AM0) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8% efficiency under a 1500 {degree}K blackbody with a projected efficiency of 29.3%. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8% and 6% respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  6. Measurement of heavy-hole spin dephasing in (InGa)As quantum dots

    NASA Astrophysics Data System (ADS)

    Dahbashi, R.; Hübner, J.; Berski, F.; Wiegand, J.; Marie, X.; Pierz, K.; Schumacher, H. W.; Oestreich, M.

    2012-01-01

    We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time τfasthh of 27 ns and a second, long spin relaxation time τslowhh which exceeds the latter by more than one order of magnitude. The two times are attributed to heavy-hole spins aligned perpendicular and parallel to the stochastic nuclear magnetic field. Intensity dependent measurements and numerical simulations reveal that the long relaxation time is still obscured by light absorption, despite low laser intensity and large detuning. Off-resonant light absorption causes a suppression of the spin noise signal due to the creation of a second hole entailing a vanishing hole spin polarization.

  7. InGaAs PV device development for TPV power systems

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fatemi, Navid S.; Hoffman, Richard W., Jr.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David; Lowe, Roland A.; Chubb, Donald

    1994-01-01

    Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

  8. Dynamic vibronic coupling in InGaAs quantum dots [Invited

    NASA Astrophysics Data System (ADS)

    Brash, A. J.; Martins, L. M. P. P.; Barth, A. M.; Liu, F.; Quilter, J. H.; Glässl, M.; Axt, V. M.; Ramsay, A. J.; Skolnick, M. S.; Fox, A. M.

    2016-07-01

    The electron-phonon coupling in self-assembled InGaAs quantum dots is relatively weak at low light intensities, which means that the zero-phonon line in emission is strong compared to the phonon sideband. However, the coupling to acoustic phonons can be dynamically enhanced in the presence of an intense optical pulse tuned within the phonon sideband. Recent experiments have shown that this dynamic vibronic coupling can enable population inversion to be achieved when pumping with a blue-shifted laser and for rapid de-excitation of an inverted state with red detuning. In this paper we con?rm the incoherent nature of the phonon-assisted pumping process and explore the temperature dependence of the mechanism. We also show that a combination of blue- and red-shifted pulses can create and destroy an exciton within a timescale ~20 ps determined by the pulse duration and ultimately limited by the phonon thermalisation time.

  9. Inversion of Zeeman splitting of exciton states in InGaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Grigoryev, P. S.; Yugov, O. A.; Eliseev, S. A.; Efimov, Yu. P.; Lovtcius, V. A.; Petrov, V. V.; Sapega, V. F.; Ignatiev, I. V.

    2016-05-01

    Zeeman splitting of quantum-confined states of excitons in InGaAs quantum wells (QWs) is experimentally found to depend strongly on quantization energy. Moreover, it changes sign when the quantization energy increases with a decrease in the QW width. In the 87-nm QW, the sign change is observed for the excited quantum-confined states, which are above the ground state only by a few meV. A two-step approach for the numerical solution of the two-particle Schrödinger equation, taking into account the Coulomb interaction and valence-band coupling, is used for a theoretical justification of the observed phenomenon. The calculated variation of the g -factor convincingly follows the dependencies obtained in the experiments.

  10. InGaAs vertical-cavity surface-emitting lasers

    SciTech Connect

    Geels, R.S.; Corzine, S.W.; Coldren, L.A. )

    1991-06-01

    In this paper the authors give theoretical and experimental results for vertical-cavity surface-emitting lasers (VCSEL's). The modeling is applied to the design of InGaAs VCSEL's A simple method is introduced to calculate the reflectivity of semiconductor stack mirrors with graded interfaces and compound metal/semiconductor stack mirrors. The theoretical predictions are compared to results from actual device measurements. A novel technique is introduced to determine material parameters: fabrication of in-plane lasers from VCSEL material. The procedure used to determine the optical model in such an in-plane laser is described. Using the insight gained from our modeling, we have increased our external efficiency to {gt}30% with a threshold current density of 1 kA/cm{sup 2}. Linewidth measurements on very high reflectivity VCSEL's have indicated widths as low as 85 MHz and linewidth-power products of 5 MHz {center dot} mW.

  11. Development of high performance SWIR InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Nagi, Richie; Bregman, Jeremy; Mizuno, Genki; Oduor, Patrick; Olah, Robert; Dutta, Achyut K.; Dhar, Nibir K.

    2015-05-01

    Banpil Photonics has developed a novel InGaAs based photodetector array for Short-Wave Infrared (SWIR) imaging, for the most demanding security, defense, and machine vision applications. These applications require low noise from both the detector and the readout integrated circuit arrays. In order to achieve high sensitivity, it is crucial to minimize the dark current generated by the photodiode array. This enables the sensor to function in extremely low light situations, which enables it to successfully exploit the benefits of the SWIR band. In addition to minimal dark current generation, it is essential to develop photodiode arrays with higher operating temperatures. This is critical for reducing the power consumption of the device, as less energy is spent in cooling down the focal plane array (in order to reduce the dark current). We at Banpil Photonics are designing, simulating, fabricating and testing SWIR InGaAs arrays, and have achieved low dark current density at room temperature. This paper describes Banpil's development of the photodetector array. We also highlight the fabrication technique used to reduce the amount of dark current generated by the photodiode array, in particular the surface leakage current. This technique involves the deposition of strongly negatively doped semiconductor material in the area between the pixels. This process reduces the number of dangling bonds present on the edges of each pixel, which prevents electrons from being swept across the surface of the pixels. This in turn drastically reduces the amount of surface leakage current at each pixel, which is a major contributor towards the total dark current. We present the optical and electrical characterization data, as well as the analysis that illustrates the dark current mechanisms. Also highlighted are the challenges and potential opportunities for further reduction of dark current, while maintaining other parameters of the photodiode array, such as size, weight, temperature

  12. Vacuum packaging of InGaAs focal plane array with four-stage thermoelectric cooler

    NASA Astrophysics Data System (ADS)

    Mo, De-feng; Liu, Da-fu; Yang, Li-yi; Xu, Qin-fei; Li, Xue

    2013-09-01

    The InGaAs focal plane array (FPA) detectors, covering the near-infrared 1~2.4 μm wavelength range, have been developed for application in space-based spectroscopy of the Earth atmosphere. This paper shows an all-metal vacuum package design for area array InGaAs detector of 1024×64 pixels, and its architecture will be given. Four-stage thermoelectric cooler (TEC) is used to cool down the FPA chip. To acquire high heat dissipation for TEC's Joule-heat, tungsten copper (CuW80) and kovar (4J29) is used as motherboard and cavity material respectively which joined by brazing. The heat loss including conduction, convection and radiation is analyzed. Finite element model is established to analyze the temperature uniformity of the chip substrate which is made of aluminum nitride (AlN). The performance of The TEC with and without heat load in vacuum condition is tested. The results show that the heat load has little influence to current-voltage relationship of TEC. The temperature difference (ΔT) increases as the input current increases. A linear relationship exists between heat load and ΔT of the TEC. Theoretical analysis and calculation show that the heat loss of radiation and conduction is about 187 mW and 82 mW respectively. Considering the Joule-heat of readout circuit and the heat loss of radiation and conduction, the FPA for a 220 K operation at room temperature can be achieved. As the thickness of AlN chip substrate is thicker than 1 millimeter, the temperature difference can be less than 0.3 K.

  13. Development of hybrid organic-inorganic surface imprinted Mn-doped ZnS QDs and their application as a sensing material for target proteins.

    PubMed

    Tan, Lei; Huang, Cong; Peng, Rongfei; Tang, Youwen; Li, Weiming

    2014-11-15

    Applying molecular imprinting techniques to the surface of functionalized quantum dots (QDs) allows the preparation of molecularly imprinted polymers (MIPs) with accessible, surface exposed binding sites and excellent optical properties. This paper demonstrates a new strategy for producing such hybrid organic-inorganic imprinted Mn-doped ZnS QDs for specific recognition of bovine hemoglobin. The technique provides surface grafting imprinting in aqueous solutions using amino modified Mn-doped ZnS QDs as supports, acrylamide and methacrylic acid as functional monomers, γ-methacryloxypropyl trimethoxy silane as the grafting agent, and bovine hemoglobin as a template. The amino propyl functional monomer layer directs the selective occurrence of imprinting polymerization at the QDs surface through copolymerization of grafting agents with functional monomers, but also acts as an assistive monomer to drive the template into the formed polymer shells to create effective recognition sites. Using MIP-QDs composites as a fluorescence sensing material, trace amounts of bovine hemoglobin are signaled with high selectivity by emission intensity changes of Mn-doped ZnS QDs, which is embedded into the imprinted polymers. PMID:24951920

  14. Synthesis and characterization of Mn doped ZnCdS core shell nanostructures QDs using a chemical precipitation route

    NASA Astrophysics Data System (ADS)

    Kaur, Manpreet; Pandey, O. P.; Sharma, Manoj

    2016-04-01

    With advancement in time, researchers has drawn great attention in the synthesis and characterization of mono dispersed alloyed nanocomposites of II-VI compounds. Ternary semiconductor alloyed ZnCdS quantum dots (QD's) exhibit properties intermediate between those of ZnS and CdS. It shows high absorption coefficients, a composition tunable and size tunable band gap. Moreover, ZnCdS alloyed NC's display unique composition dependent properties distinct from those of their bulk counterparts. The most striking feature of the alloyed NC's nanocrystals is their unusual long time stability in emission wavelength. ZnCdS alloyed QD's at room temperature has been synthesized using chemical precipitation method. Undoped and Mn2+ doped ZnCdS QDs have been synthesized and studied. UV-visible absorption spectrum shows absorbance in the visible region and photoluminescence (PL) emission spectra of the doped ZnCdS QD's shows orange emission in comparison to weak blue emission from undoped QDs. The crystallite size is calculated from the XRD patterns. The experimental results indicate that this easy synthesis route would prove a versatile approach for the preparation of doped and undoped ZnCdS QD's.

  15. Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy

    SciTech Connect

    Fedoryshyn, Y.; Kaspar, P.; Jaeckel, H.; Beck, M.

    2010-05-15

    Bulk InGaAs layers were grown at 400 deg. C lattice-matched to InP semi-insulating substrates by molecular beam epitaxy. Si doping of the layers was performed by applying volume- and delta-doping techniques. The samples were characterized by capacitance-voltage, van der Pauw-Hall, secondary ion mass spectroscopy and photoluminescence measurements. Good agreement in terms of dependence of mobility and Burstein-Moss shift shift on doping concentration in samples doped by the two different techniques was obtained. Amphoteric behavior of Si was observed at doping concentrations higher than {approx}2.9x10{sup 19} cm{sup -3} in both delta- and volume-doped samples. Degradation of InGaAs crystalline quality occurred in samples with Si concentrations higher than {approx}4x10{sup 19} cm{sup -3}.

  16. Testing of InGaAs, microbolometer and pyroelectric detectors in support of the EarthCARE mission

    NASA Astrophysics Data System (ADS)

    Hopkinson, Gordon; Gomez Rojas, Luis; Skipper, Mark; Meynart, Roland

    2008-10-01

    A test programme for infrared detectors in support of the EarthCARE mission is discussed. Commercially available linear InGaAs arrays from XenICs, Belgium (cut-off wavelengths 1.7, 2.2 and 2.5 μm), 384 x 288 amorphous silicon microbolometer arrays from ULIS, France and un-windowed single element lithium tantalate pyroelectric detectors from Infratec, Germany have been studied in detail to assess their suitability for EarthCARE and to provide performance data to aid in the design of the flight instruments. Tests included radiation resistance (cobalt60 and 60 MeV protons plus a heavy ion latch-up test for the InGaAs and microbolometer arrays), dark signal, noise, output stability, linearity, crosstalk and spectral response. In addition, the pyroelectric detectors were tested for low microphony.

  17. A simple device for measuring the spectral transmittance of lens used in InGaAs image intensifier apparatus

    NASA Astrophysics Data System (ADS)

    Bai, Xiaofeng; Guo, Hui; Yin, Lei; He, Yingping; Hou, Zhipeng; Miao, Zhuang; Yan, Lei

    2014-09-01

    In this article, in order to accurately measure the spectral transmittance of imaging lens used in InGaAs imaging apparatus, a simple device, which spectrum ranges from 400 nanometers to 2000 nanometers, based on double grating monochromator and self-collimating has been founded by using stable shortwave infrared radiant source, accurate double grating monochromator and telescope, stable silicon detector and cooled HgCdTe infrared detector. An imaging lens whose spectral transmittance has been known is measured on it. Comparing the test results to known data provided by manufacture, it is shown that the testing device founded in this article is competent to measure spectral transmittance of shortwave infrared imaging lens and which max relative deviation is no more than +/-2.5%. It is worthwhile for selecting InGaAs image intensifier assembly and evaluating the quality of shortwave infrared imaging lens.

  18. 15 μm pixel-pitch VGA InGaAs module for very low background applications

    NASA Astrophysics Data System (ADS)

    Rouvié, A.; Huet, O.; Reverchon, J. L.; Robo, J. A.; Truffer, J. P.; Decobert, J.; Costard, E.; Bois, P.

    2011-11-01

    Thanks to the high transmission coefficient of short infrared wavelengths in the atmosphere and specific contrasts, SWIR imaging is an attractive technology for space applications such as astronomical or earth observation. Detection module must demonstrate high uniformity, sensitivity and resolution combined with compactness to meet the needs of this application field. Image sensors based on InGaAs photodiodes arrays present very low dark currents even at ambient temperature as high quality materials can be grown on InP substrates. Besides, the suppression of InP substrate after hybridization is a way to extend the detection range towards visible wavelengths. These properties result in a new generation of sensitive, compact and multifunctional InGaAs detection modules. In this paper, we describe the performances of an uncooled VGA InGaAs module recently developed. The 640x512 array with a pitch of 15μm allows high resolution images. The excellent crystalline quality induces very low dark current densities at ambient temperature. The readout circuit is based on a capacitive trans-impedance amplifier with correlated double sampling resulting in low readout noise figure. This compact module appears as a serious alternative to the existing technologies for low light level imaging in the [0.4μm-1.7μm] spectral range.

  19. Low dark current small pixel large format InGaAs 2D photodetector array development at Teledyne Judson Technologies

    NASA Astrophysics Data System (ADS)

    Yuan, Henry; Meixell, Mike; Zhang, Jiawen; Bey, Philip; Kimchi, Joe; Kilmer, Louis C.

    2012-06-01

    Teledyne Judson Technologies (TJT) has been developing technology for small pixel, large format, low dark current, and low capacitance NIR/SWIR InGaAs detector arrays, aiming to produce <10μm pixels and >2Kx2K format arrays that can be operated at or near room temperature. Furthermore, TJT is now developing technology for sub-10μm pixel arrays in response to requirements for a variety of low light level (LLL) imaging applications. In this paper, we will review test data that demonstrates lower dark current density for 10-20μm pixel arrays. We will present preliminary results on the successful fabrication of test arrays with pixels as small as 5μm. In addition, a lot of effort has been made to control and reduce the detector pixel capacitance which can become another source of detector noise. TJT is also developing 4" InGaAs wafer process and now offers four different types of InGaAs 2D arrays/FPAs that are tailored to different customer requirements for dark current, capacitance, spectral response, and bias range.

  20. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

    NASA Astrophysics Data System (ADS)

    Mukherjee, K.; Beaton, D. A.; Christian, T.; Jones, E. J.; Alberi, K.; Mascarenhas, A.; Bulsara, M. T.; Fitzgerald, E. A.

    2013-05-01

    Direct-bandgap InAlP alloy has the potential to be an active material in nitride-free yellow-green and amber optoelectronics with applications in solid-state lighting, display devices, and multi-junction solar cells. We report on the growth of high-quality direct-bandgap InAlP on relaxed InGaAs graded buffers with low threading dislocation densities. Structural characterization reveals phase-separated microstructures in these films which have an impact on the luminescence spectrum. While similar to InGaP in many ways, the greater tendency for phase separation in InAlP leads to the simultaneous occurrence of compositional inhomogeneity and CuPt-B ordering. Mechanisms connecting these two structural parameters are presented as well as results on the effect of silicon and zinc dopants on homogenizing the microstructure. Spontaneous formation of tilted planes of phase-separated material, with alternating degrees of ordering, is observed when InAlP is grown on vicinal substrates. The photoluminescence peak-widths of these films are actually narrower than those grown on exact (001) substrates. We find that, despite phase-separation, ordered direct-bandgap InAlP is a suitable material for optoelectronics.

  1. Efficient double-quenching of electrochemiluminescence from CdS:Eu QDs by hemin-graphene-Au nanorods ternary composite for ultrasensitive immunoassay

    PubMed Central

    Liu, Jing; Cui, Meirong; Zhou, Hong; Zhang, Shusheng

    2016-01-01

    A novel ternary composite of hemin-graphene-Au nanorods (H-RGO-Au NRs) with high electrocatalytic activity was synthesized by a simple method. And this ternary composite was firstly used in construction of electrochemiluminescence (ECL) immunosensor due to its double-quenching effect of quantum dots (QDs). Based on the high electrocatalytic activity of ternary complexes for the reduction of H2O2 which acted as the coreactant of QDs-based ECL, as a result, the ECL intensity of QDs decreased. Besides, due to the ECL resonance energy transfer (ECL-RET) strategy between the large amount of Au nanorods (Au NRs) on the ternary composite surface and the CdS:Eu QDs, the ECL intensity of QDs was further quenched. Based on the double-quenching effect, a novel ultrasensitive ECL immunoassay method for detection of carcinoembryonic antigen (CEA) which is used as a model biomarker analyte was proposed. The designed immunoassay method showed a linear range from 0.01 pg mL−1 to 1.0 ng mL−1 with a detection limit of 0.01 pg mL−1. The method showing low detection limit, good stability and acceptable fabrication reproducibility, provided a new approach for ECL immunoassay sensing and significant prospect for practical application. PMID:27460868

  2. Synthesis of water-soluble Ag₂Se QDs as a novel resonance Rayleigh scattering sensor for highly sensitive and selective ConA detection.

    PubMed

    Yan, Shuguang; Zhang, Lichun; Tang, Yurong; Lv, Yi

    2014-09-01

    Ag2Se quantum dots (QDs) have attracted a lot of interest due to their potential applications in biosensing and bioimaging. A strategy is presented that involves coupling of selenium powder reduction with the binding of silver ions, and thioglycollic acid (TGA) and glycine as stabilizers to obtain ultrasmall Ag2Se QDs at 85 °C in aqueous solution. This strategy avoids high temperatures, high pressures and organic solvents so that water-soluble 3 nm Ag2Se QDs can be directly obtained. The conjugation of ConA to TGA stabilized Ag2Se QDs by hydrogen bonds leads to the adsorption of ConA to Ag2Se QDs and forms the aggregation and leads to the generation of resonance Rayleigh scattering (RRS) as a readout signal for the sensing events. The reaction mechanism of Ag2Se QD RRS enhancement is studied in this work. The resulting RRS sensor enables the detection of ConA with limit of detection reaching 0.08 μg mL(-1) concentration in a wide linear range from 0.27 μg mL(-1) to 35 μg mL(-1). The recovery of spiked ConA in human serum samples ranges from 94% to 106%. The relative standard deviation (RSD) for eleven replicate detections is 3.6%. Our results correlate many important experimental observations and will fuel the further growth of this field. PMID:24957549

  3. Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs

    NASA Astrophysics Data System (ADS)

    Qi, Zhiqiang; Li, Senlin; Sun, Shichuang; Zhang, Wei; Ye, Wei; Fang, Yanyan; Tian, Yu; Dai, Jiangnan; Chen, Changqing

    2015-10-01

    An effective approach for growing large-scale, uniformly aligned ZnO nanorods arrays is demonstrated. The synthesis uses a GaN quantum dot (QD) template produced by a self-assembled Stranski-Krastanow mode in metal organic chemical vapor deposition, which serves as a nucleation site for ZnO owing to the QD’s high surface free energy. The resultant ZnO nanorods with uniform shape and length align vertically on the template, while their density is easily tunable by adjusting the density of GaN QDs, which can be adjusted by simply varying growth interruption. By controlling the density of ZnO nanorod arrays, their optical performance can also be improved. This approach opens the possibility of combining one-dimensional (1D) with 0D nanostructures for applications in sensor arrays, piezoelectric antenna arrays, optoelectronic devices, and interconnects.

  4. Components-dependent optical nonlinearity in a series of CdSexS1-x and CdSexS1-x/ZnS QDs

    NASA Astrophysics Data System (ADS)

    Zhao, Shunlong; Wu, Feng; Zhang, Siwen; Wang, Qian; Li, Songtao; Cheng, Xiaoman

    2016-08-01

    The different compositions of the ternary alloyed CdSexS1-x and CdSexS1-x/ZnS core/shell quantum dots(CSQDs) have been synthesized by the chemical routes. The nonlinear optical properties of these QDs were investigated using Z-scan technique under the excitation of the 1064 nm picosecond laser pulse. The Z-scan results reveal that the nonlinear refractive indices of these QDs can be tuned by changing the ratio of Se and S components. Nonlinear optical (NLO) properties have been shown to be enhanced in CSQDs as compared to their core semiconductor counterparts. These QDs exhibit the components-tuned nonlinear refraction indices, which lead to a wide application in the photonic field.

  5. Generation of reactive oxygen species from 5-aminolevulinic acid and Glutamate in cooperation with excited CdSe/ZnS QDs

    NASA Astrophysics Data System (ADS)

    Duong, Hong Dinh; Lee, Jee Won; Rhee, Jong Il

    2014-08-01

    CdSe/ZnS quantum dots (QDs) can be joined in the reductive pathway involving the electron transfer to an acceptor or in the oxidative pathway involving the hole transfer to a donor. They were exploited in the oxidation reactions of 5-aminolevulinic acid (ALA) and glutamate (GLU) for the generation of reactive oxygen species (ROS) such as hydroxyl radical (HO●) and superoxide anion (O2 ● -). Fast and highly efficient oxidation reactions of ALA to produce HO● and of GLU to produce O2 ●- were observed in the cooperation of mercaptopropionic acid (MPA)-capped CdSe/ZnS QDs under LED irradiation. Fluorescence spectroscopy and electron spin resonance (ESR) spectroscopy were used to evaluate the generation of different forms of ROS. Confocal fluorescent microscopic images of the size and morphology of HeLa cells confirmed the ROS generation from ALA or GLU in cooperation with CdSe/ZnS QDs under LED irradiation.

  6. Quantum size effects on the optical properties of nc-Si QDs embedded in an a-SiOx matrix synthesized by spontaneous plasma processing.

    PubMed

    Das, Debajyoti; Samanta, Arup

    2015-02-21

    Quantum confinement effects on optical transitions in ensembles of nc-Si QDs in an a-SiOx matrix has become evident by simultaneously considering the dielectric function dispersions obtained by optical modeling with spectroscopic ellipsometry, the absorption edge, and the photoluminescence peak. Diminution of the peak amplitude in the ε2-spectra for reducing the diameter of nc-Si QDs could arise due to the disappearance of excitonic effects in the E1 transition, while the peak broadening indicates an amplification of disorder in Si QDs. An energy blue shift happens to take place in an analogous fashion for all the characteristic parameters, upon decreasing the size of the nc-Si QDs for diameters in the range 6.5 < d < 2.0 nm. The band gap widening with the reduction of QD size is well supported by the first-principles calculations based on quantum confinement, while studies on the Stokes shift in the optical gap from the PL data could provide an understanding of the imperfect passivation of the surface defects on tiny nc-Si QDs. Low dimensional nc-Si QDs (∼2 nm in diameter) assembled in a large density (∼2.3 × 10(12) cm(-2)) embedded in an a-SiOx matrix synthesized by spontaneous and low-temperature (300 °C) RF plasma processing, compatible to CMOS technology, are highly conducive for device applications. Systematic changes in composition and characteristics, including the thickness, of the individual sub-layers of the nc-Si QD thin films can be comprehensively pursued through a nondestructive process by ellipsometric simulation which could, thereby, enormously contribute to the precise optimization of the deposition parameters suitable for specific device fabrication e.g., all-silicon tandem solar cells and light emitting diodes, using silicon nanotechnology. PMID:25598473

  7. Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers

    SciTech Connect

    Pocha, M D; Goddard, L L; Bond, T C; Nikolic, R J; Vernon, S P; Kallman, J S; Behymer, E M

    2007-01-03

    In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.

  8. Stray light characterization of an InGaAs anamorphic hyperspectral imager.

    PubMed

    Lin, Mike; Swanson, Rand; Moon, Thomas; Smith, Casey; Kehoe, Michael; Brown, Steven W; Lykke, Keith R

    2010-08-01

    Compact hyperspectral sensors potentially have a wide range of applications, including machine vision, quality control, and surveillance from small Unmanned Aerial Vehicles (UAVs). With the development of Indium Gallium Arsenide (InGaAs) focal plane arrays, much of the Short Wave Infra-Red (SWIR) spectral regime can be accessed with a small hyperspectral imaging system, thereby substantially expanding hyperspectral sensing capabilities. To fully realize this potential, system performance must be well-understood. Here, stray light characterization of a recently-developed push-broom hyperspectral sensor sensitive in the 1 microm -1.7 microm spectral regime is described. The sensor utilizes anamorphic fore-optics that partially decouple image formation along the spatial and spectral axes of the instrument. This design benefits from a reduction in complexity over standard high-performance spectrometer optical designs while maintaining excellent aberration control and spatial and spectral distortion characteristics. The stray light performance characteristics of the anamorphic imaging spectrometer were measured using the spectral irradiance and radiance responsivity calibrations using uniform sources (SIRCUS) facility at the National Institute of Standards and Technology (NIST). A description of the measurements and results are presented. Additionally, a stray-light matrix was assembled for the instrument to improve the instrument's spectral accuracy. Transmittance of a silicon wafer was measured to validate this approach. PMID:20721136

  9. Polarized and spatially resolved Raman scattering from composition-graded wurtzite InGaAs nanowires

    NASA Astrophysics Data System (ADS)

    Kim, H.; Rho, H.; Lee, E. H.; Song, J. D.

    2016-05-01

    We report Raman scattering from wurtzite single-crystalline InGaAs nanowires (NWs) to probe optical phonon behaviors associated with spatial grading in alloy composition along the NW length. Polarized Raman spectra revealed several optical phonons and their scattering symmetries: (i) InAs-like A 1(LO) and A 1(TO) phonons and (ii) GaAs-like A 1(LO), A 1(TO), and E 2(high) phonons. In addition, strong anisotropic behavior was observed in the Raman tensor elements of the A 1(TO) phonon mode. Interestingly, a spatial mapping of the GaAs-like A 1(TO) phonon along the NW length direction showed a systematic increase in energy from the NW top (~255 cm‑1) to the midpoint (~263 cm‑1), indicating an increase in the Ga mole fraction from about 0.5 to about 0.8. Further toward the NW bottom, the GaAs-like A 1(TO) phonon energy saturated to the peak value at about 264 cm‑1. In the upper half of the NW, the phonon linewidths broadened significantly due to the spatial grading in In/Ga composition along the NW length. When the composition grading was negligible in the bottom half of the NW, the spectral widths were considerably narrowed. The GaAs-like E 2(high) phonon showed similar variations in both energy and spectral width along the NW length.

  10. Reduction of sidewall interface recombination in GaAs and InGaAs active regions

    NASA Astrophysics Data System (ADS)

    Strand, Timothy Andrew

    In the continual effort to reduce the operating current in semiconductor lasers, the first step is always to reduce the size of the device. When we do so, however, we encounter a new set of challenges. As the device size decreases, the "walls close in" on the electrons and holes, that is, the sidewalls of the device become so close together that the electrons and holes can diffuse to them before recombining radiatively. The device sidewalls, are often littered with carrier traps, which act as nonradiative recombination sites for the electrons and holes. This wasted current, a small fraction of the total in larger devices, becomes the dominant current mechanism in small devices. In this work we present two techniques for limiting this sidewall interface recombination. The first uses semiconductor regrowth to remove the recombination sites that are normally formed at the air-exposed sidewalls. We use buried, in-plane lasers to demonstrate a reduction in the sidewall recombination rate by a factor of forty. In the second technique, we show that the sidewall interface recombination can also be reduced by preventing the carriers from diffusing to the sidewalls. We demonstrate two methods for reducing this lateral carrier diffusion; segmented GaAs quantum wells, and InGaAs quantum dots. In the former, we demonstrate a reduction in the low-temperature lateral carrier diffusion constant by a factor of forty-six (versus a comparable GaAs quantum well).

  11. Conduction mechanisms in ion-irradiated InGaAs layers

    SciTech Connect

    Joulaud, L.; Mangeney, J.; Chimot, N.; Crozat, P.; Fishman, G.; Bourgoin, J.C.

    2005-03-15

    The electrical and optical properties of H{sup +}- and Au{sup +}-irradiated InGaAs layers were studied using Hall-effect, van der Pauw, and relaxation-time measurements. Comparing the different results allows us to obtain information on the nature of the defects created by these two irradiations. Proton irradiation introduces donor-acceptor paired defects. Gold-ion irradiation creates neutral defect clusters and ionized point defects. The carrier mobilities in all of the irradiated materials are degraded, decreasing with increasing irradiation dose. A scattering model taking into account the paired defects is developed and the mobility evolution calculated from this model agrees with the experimental data of both annealed and unannealed samples. The photocurrent spectra reveal a metallic conduction in the band gap in the case of light-ion irradiation, while such type of conduction does not appear for heavy-ion irradiation. This metallic conduction is a consequence of band tailing induced by shallow defects and vanishes when the material is annealed at 400 deg. C. The proton irradiation-induced defects appear to be related to the EL-2-like defects.

  12. Deep levels in virtually unstrained InGaAs layers deposited on GaAs

    NASA Astrophysics Data System (ADS)

    Pal, D.; Gombia, E.; Mosca, R.; Bosacchi, A.; Franchi, S.

    1998-09-01

    The dislocation-related deep levels in InxGa1-xAs layers grown by molecular beam epitaxy on GaAs substrates have been investigated. Virtually unstrained InGaAs layers with mole fraction x of 0.10, 0.20, and 0.30 have been obtained by properly designing the In composition of linearly graded InxGa1-xAs buffers. Two electron traps, labeled as E2 and E3, whose activation energy scales well with the energy gap, have been found. Unlike E2, E3 shows: (i) a logarithmic dependence of the deep level transient spectroscopy amplitude on the filling pulse width and (ii) an increase of concentration as the buffer/InGaAs interface is approached. These findings, together with the observation that, in compressively strained In0.2Ga0.8As, the E3-related concentration is definitely higher than that of virtually unstrained In0.2Ga0.8As, indicate that this trap is likely originated by extended defects like threading dislocations.

  13. Impact of strain engineering on nanoscale strained InGaAs MOSFET devices.

    PubMed

    Lee, Chang-Chun; Chang, Shu-Tong; Sun, P-H; Huang, C-X

    2011-07-01

    The strain distributions in the In(0.53)Ga(0.47)As channel regions of the In(0.4)Ga(0.6)As source/drain (S/D) with various lengths and widths were studied via 3D process simulations. The resulting mobility improvement was analyzed. The tensile strain along the transport direction was found to dominate the mobility improvement. The strain along the vertical direction perpendicular to the gate oxide was found to affect the mobility the least, while the strain along the width direction was slightly degraded. The impact of the channel width and length on the performance improvement, such as on the mobility gain, was analyzed via TCAD simulations. The novelty of this paper stems from its study of the impact of the channel width and length on the performance of InGaAs NMOSFETs, such as on their mobility gain, and from its exploration of physical insights for scaling the future III-V MOS devices. PMID:22121581

  14. Enhanced DSSCs efficiency via Cooperate co-absorbance (CdS QDs) and plasmonic core-shell nanoparticle (Ag@PVP)

    PubMed Central

    Amiri, Omid; Salavati-Niasari, Masoud; Bagheri, Samira; Yousefi, Amin Termeh

    2016-01-01

    This paper describes cooperate the co-absorbance (CdS QDs) and the plasmonic core-shell nanoparticles (Ag@PVP) of dye synthesized solar cells in which CdS QDs and Ag@PVP are incorporated into the TiO2 layer. Cooperative nanoparticles show superior behavior on enhancing light absorption in comparison with reference cells. Cooperated DSSC exhibits the best performance with the power conversion efficiency of 7.64% which is superior to that of the free–modified DSSC with the PCE of 5%. Detailed studies offer an effective approach to enhance the efficiency of dye synthesized solar cells. PMID:27143126

  15. Enhanced DSSCs efficiency via Cooperate co-absorbance (CdS QDs) and plasmonic core-shell nanoparticle (Ag@PVP).

    PubMed

    Amiri, Omid; Salavati-Niasari, Masoud; Bagheri, Samira; Yousefi, Amin Termeh

    2016-01-01

    This paper describes cooperate the co-absorbance (CdS QDs) and the plasmonic core-shell nanoparticles (Ag@PVP) of dye synthesized solar cells in which CdS QDs and Ag@PVP are incorporated into the TiO2 layer. Cooperative nanoparticles show superior behavior on enhancing light absorption in comparison with reference cells. Cooperated DSSC exhibits the best performance with the power conversion efficiency of 7.64% which is superior to that of the free-modified DSSC with the PCE of 5%. Detailed studies offer an effective approach to enhance the efficiency of dye synthesized solar cells. PMID:27143126

  16. Enhanced DSSCs efficiency via Cooperate co-absorbance (CdS QDs) and plasmonic core-shell nanoparticle (Ag@PVP)

    NASA Astrophysics Data System (ADS)

    Amiri, Omid; Salavati-Niasari, Masoud; Bagheri, Samira; Yousefi, Amin Termeh

    2016-05-01

    This paper describes cooperate the co-absorbance (CdS QDs) and the plasmonic core-shell nanoparticles (Ag@PVP) of dye synthesized solar cells in which CdS QDs and Ag@PVP are incorporated into the TiO2 layer. Cooperative nanoparticles show superior behavior on enhancing light absorption in comparison with reference cells. Cooperated DSSC exhibits the best performance with the power conversion efficiency of 7.64% which is superior to that of the free–modified DSSC with the PCE of 5%. Detailed studies offer an effective approach to enhance the efficiency of dye synthesized solar cells.

  17. Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Peng, C. K.; Chen, J.; Chyi, J.; Morkoc, H.

    1988-01-01

    Extremely low alloyed and nonalloyed ohmic contact resistances have been formed on n-type InAs/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures grown on InP(Fe) by molecular-beam epitaxy. To insure the accuracy of the small contact resistances measured, an extended transmission line model was used to extrapolate contact resistances from test patterns with multiple gap spacings varying from 1 to 20 microns. For a 150-A-thick InAs layer doped to 2 x 10 to the 18th/cu cm and a 0.1-micron-thick InGaAs layer doped to 1 x 10 to the 18th/cu cm, a specific contact resistance of 2.6 x 10 to the -8th ohm-asterisk sq cm was measured for the nonalloyed contact, while a resistance less than 1.7 x 10 to the -8th ohm-asterisk sq cm is reported for the alloyed contact. Conventional Au-Ge/Ni/Au was used for the ohmic metal contact and alloying was performed at 500 C for 50 s in flowing H2. Using a thermionic field emission model, the barrier height at the InAs/InGaAs interface was calculated to be 20 meV.

  18. Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

    NASA Astrophysics Data System (ADS)

    Mohandas, Reshma A.; Freeman, Joshua R.; Rosamond, Mark C.; Hatem, Osama; Chowdhury, Siddhant; Ponnampalam, Lalitha; Fice, Martyn; Seeds, Alwyn J.; Cannard, Paul J.; Robertson, Michael J.; Moodie, David G.; Cunningham, John E.; Davies, A. Giles; Linfield, Edmund H.; Dean, Paul

    2016-04-01

    We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.

  19. Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process

    PubMed Central

    Park, Joong Pill; Lee, Jae-Joon; Kim, Sang-Wook

    2016-01-01

    InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization efforts successfully. Herein, we introduce a simple synthetic method for InP/GaP/ZnS core/shell/shell QDs via a heating process. The reaction was completed within 0.5 h and a full color range from blue to red was achieved. For emitting blue color, t-DDT was applied to prevent particle growth. From green to orange, color variation was achieved by adjusting the quantity of myristic acid. Utilizing large quantities of gallium chloride led to red color. With this method, we produced high-quality InP/GaP/ZnS QDs (blue QY: ~40%, FWHM: 50 nm; green QY: ~85%, FWHM: 41 nm; red QY: ~60%, FWHM: 65 nm). We utilized t-DDT as a new sulfur source. Compared with n-DDT, t-DDT was more reactive, which allowed for the formation of a thicker shell. PMID:27435428

  20. Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process.

    PubMed

    Park, Joong Pill; Lee, Jae-Joon; Kim, Sang-Wook

    2016-01-01

    InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization efforts successfully. Herein, we introduce a simple synthetic method for InP/GaP/ZnS core/shell/shell QDs via a heating process. The reaction was completed within 0.5 h and a full color range from blue to red was achieved. For emitting blue color, t-DDT was applied to prevent particle growth. From green to orange, color variation was achieved by adjusting the quantity of myristic acid. Utilizing large quantities of gallium chloride led to red color. With this method, we produced high-quality InP/GaP/ZnS QDs (blue QY: ~40%, FWHM: 50 nm; green QY: ~85%, FWHM: 41 nm; red QY: ~60%, FWHM: 65 nm). We utilized t-DDT as a new sulfur source. Compared with n-DDT, t-DDT was more reactive, which allowed for the formation of a thicker shell. PMID:27435428

  1. Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process

    NASA Astrophysics Data System (ADS)

    Park, Joong Pill; Lee, Jae-Joon; Kim, Sang-Wook

    2016-07-01

    InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization efforts successfully. Herein, we introduce a simple synthetic method for InP/GaP/ZnS core/shell/shell QDs via a heating process. The reaction was completed within 0.5 h and a full color range from blue to red was achieved. For emitting blue color, t-DDT was applied to prevent particle growth. From green to orange, color variation was achieved by adjusting the quantity of myristic acid. Utilizing large quantities of gallium chloride led to red color. With this method, we produced high-quality InP/GaP/ZnS QDs (blue QY: ~40%, FWHM: 50 nm green QY: ~85%, FWHM: 41 nm red QY: ~60%, FWHM: 65 nm). We utilized t-DDT as a new sulfur source. Compared with n-DDT, t-DDT was more reactive, which allowed for the formation of a thicker shell.

  2. Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot

    NASA Astrophysics Data System (ADS)

    Hackens, B.; Faniel, S.; Delfosse, F.; Gustin, C.; Boutry, H.; Huynen, I.; Wallart, X.; Bollaert, S.; Cappy, A.; Bayot, V.

    2003-04-01

    We report on measurements of the magnetoconductance of an open circular InGaAs quantum dot between 1.3 and 204 K. We observe two types of magnetoconductance fluctuations: universal conductance fluctuations (UCFs), and “focusing” fluctuations related to ballistic trajectories between openings. The electron phase coherence time extracted from UCFs amplitude is larger than in GaAs/AlGaAs quantum dots and follows a similar temperature dependence (between T-1 and T-2). Below 150 K, the characteristic length associated with “focusing” fluctuations shows a slightly different temperature dependence from that of the conductivity.

  3. Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip

    SciTech Connect

    Popov, V. V.; Yermolaev, D. M.; Shapoval, S. Yu.; Maremyanin, K. V.; Gavrilenko, V. I.; Zemlyakov, V. E.; Bespalov, V. A.; Yegorkin, V. I.; Maleev, N. A.; Ustinov, V. M.

    2014-04-21

    A tightly concatenated chain of InGaAs field-effect transistors with an asymmetric T-gate in each transistor demonstrates strong terahertz photovoltaic response without using supplementary antenna elements. We obtain the responsivity above 1000 V/W and up to 2000 V/W for unbiased and drain-biased transistors in the chain, respectively, with the noise equivalent power below 10{sup −11} W/Hz{sup 0.5} in the unbiased mode of the detector operation.

  4. Electro-optical switching between polariton and cavity lasing in an InGaAs quantum well microcavity.

    PubMed

    Amthor, Matthias; Weißenseel, Sebastian; Fischer, Julian; Kamp, Martin; Schneider, Christian; Höfling, Sven

    2014-12-15

    We report on the condensation of microcavity exciton polaritons under optical excitation in a microcavity with four embedded InGaAs quantum wells. The polariton laser is characterized by a distinct non-linearity in the input-output-characteristics, which is accompanied by a drop of the emission linewidth indicating temporal coherence and a characteristic persisting emission blueshift with increased particle density. The temporal coherence of the device at threshold is underlined by a characteristic drop of the second order coherence function to a value close to 1. Furthermore an external electric field is used to switch between polariton regime, polariton condensate and photon lasing. PMID:25607064

  5. Imaging Early Demineralization on Tooth Occlusal Surfaces with a High Definition InGaAs Camera

    PubMed Central

    Fried, William A.; Fried, Daniel; Chan, Kenneth H.; Darling, Cynthia L.

    2013-01-01

    In vivo and in vitro studies have shown that high contrast images of tooth demineralization can be acquired in the near-IR due to the high transparency of dental enamel. The purpose of this study is to compare the lesion contrast in reflectance at near-IR wavelengths coincident with high water absorption with those in the visible, the near-IR at 1300-nm and with fluorescence measurements for early lesions in occlusal surfaces. Twenty-four human molars were used in this in vitro study. Teeth were painted with an acid-resistant varnish, leaving a 4×4 mm window in the occlusal surface of each tooth exposed for demineralization. Artificial lesions were produced in the exposed windows after 1 & 2-day exposure to a demineralizing solution at pH 4.5. Lesions were imaged using NIR reflectance at 3 wavelengths, 1310, 1460 and 1600-nm using a high definition InGaAs camera. Visible light reflectance, and fluorescence with 405-nm excitation and detection at wavelengths greater than 500-nm were also used to acquire images for comparison. Crossed polarizers were used for reflectance measurements to reduce interference from specular reflectance. The contrast of both the 24 hr and 48 hr lesions were significantly higher (P<0.05) for NIR reflectance imaging at 1460-nm and 1600-nm than it was for NIR reflectance imaging at 1300-nm, visible reflectance imaging, and fluorescence. The results of this study suggest that NIR reflectance measurements at longer near-IR wavelengths coincident with higher water absorption are better suited for imaging early caries lesions. PMID:24357911

  6. Low phase noise high power handling InGaAs photodiodes for precise timing applications

    NASA Astrophysics Data System (ADS)

    Datta, Shubhashish; Joshi, Abhay; Becker, Don

    2009-05-01

    Time is the most precisely measured physical quantity. Such precision is achieved by optically probing hyperfine atomic transitions. These high Q-factor resonances demonstrate frequency instability of ~10-18 over 1 s observation time. Conversion of such a stable optical clock signal to an electrical clock through photodetection introduces additional phase noise, thereby resulting in a significant degradation in the frequency stability. This excess phase noise is primarily caused by the conversion of optical intensity noise into electrical phase noise by the phase non-linearity of the photodetector, characterized by its power-to-phase conversion factor. It is necessary to minimize this phase nonlinearity in order to develop the next generation of ultra-high precision electronic clocks. Reduction in excess phase noise must be achieved while ensuring a large output RF signal generated by the photodetector. The phase linearity in traditional system designs that employ a photoreceiver, namely a photodiode followed by a microwave amplifier, is limited by the phase non-linearity of the amplifier. Utilizing high-power handling photodiodes eliminates the need of microwave amplifiers. In this work, we present InGaAs p-i-n photodiodes that display a power-to-phase conversion factor <6 rad/W at a peak-to-peak RF output amplitude of 2 V. In comparison, the photodiode coupled to a transimpedance amplifier demonstrates >44 rad/W at a peak-to-peak RF output amplitude of 0.5 V. These results are supported by impulse response measurements at 1550 nm wavelength at 1 GHz repetition rate. These photodiodes are suitable of applications such as optical clock distribution networks, photonic analog-to-digital converters, and phased array radars.

  7. Imaging early demineralization on tooth occlusional surfaces with a high definition InGaAs camera

    NASA Astrophysics Data System (ADS)

    Fried, William A.; Fried, Daniel; Chan, Kenneth H.; Darling, Cynthia L.

    In vivo and in vitro studies have shown that high contrast images of tooth demineralization can be acquired in the near-IR due to the high transparency of dental enamel. The purpose of this study is to compare the lesion contrast in reflectance at near-IR wavelengths coincident with high water absorption with those in the visible, the near-IR at 1300-nm and with fluorescence measurements for early lesions in occlusal surfaces. Twenty-four human molars were used in this in vitro study. Teeth were painted with an acidresistant varnish, leaving a 4×4 mm window in the occlusal surface of each tooth exposed for demineralization. Artificial lesions were produced in the exposed windows after 1 and 2-day exposure to a demineralizing solution at pH 4.5. Lesions were imaged using NIR reflectance at 3 wavelengths, 1310, 1460 and 1600-nm using a high definition InGaAs camera. Visible light reflectance, and fluorescence with 405-nm excitation and detection at wavelengths greater than 500-nm were also used to acquire images for comparison. Crossed polarizers were used for reflectance measurements to reduce interference from specular reflectance. The contrast of both the 24 hr and 48 hr lesions were significantly higher (P<0.05) for NIR reflectance imaging at 1460-nm and 1600-nm than it was for NIR reflectance imaging at 1300-nm, visible reflectance imaging, and fluorescence. The results of this study suggest that NIR reflectance measurements at longer near-IR wavelengths coincident with higher water absorption are better suited for imaging early caries lesions.

  8. COUGAR: a liquid nitrogen cooled InGaAs camera for astronomy and electro-luminescence

    NASA Astrophysics Data System (ADS)

    Van Bogget, Urbain; Vervenne, Vincent; Vinella, Rosa Maria; van der Zanden, Koen; Merken, Patrick; Vermeiren, Jan

    2014-06-01

    A SWIR FPA was designed and manufactured with 640*512 pixels, 20 μm pitch and InGaAs detectors for electroluminescence characterization and astronomical applications in the [0.9 - 1.55 μm] range. The FPA is mounted in a liquid nitrogen dewar and is operated by a low noise frontend electronics. One of the biggest problem in designing sensors and cameras for electro-luminescence measurements is the autoillumination of the detectors by the readout circuit. Besides of proper shielding of the detectors, the ROIC shall be optimized for minimal electrical activity during the integration time of the very-weak signals coming from the circuit under test. For this reason a SFD (or Source Follower per Detector) architecture (like in the Hawaii sensor) was selected, resulting in a background limited performance of the detector. The pixel has a (somewhat arbitrary) full well capacity of 400 000 e- and a sensitivity of 2.17 μV/e-. The dark signal is app. 1 e-/pixel/sec and with the appropriate Fowler sampling the dark noise lowers below 5 e-rms. The power consumption of the circuit is limited 2 mW, allowing more than 24 hours of operation on less than 1 l of liquid nitrogen. The FPA is equipped with 4 outputs (optional readout on one single channel) and is capable of achieving 3 frames per second. Due to the non-destructive readout it is possible to determine in a dynamic way the optimal integration time for each observation. The Cougar camera is equipped with ultra-low noise power supply and bias lines; the electronics contain also a 24 bit AD converter to fully exploit the sensitivity of the FPA and the camera.

  9. Time-resolved spectroscopy of low-dimensional semiconductor structures

    NASA Astrophysics Data System (ADS)

    Murphy, Joseph R.

    This dissertation is a survey of ultrafast time-resolved optical measurements conducted on a variety of low-dimensional semiconductor systems to further the understanding of the dynamic behavior in the following systems: ZnMnTe/ZnSe quantum dots, ZnTe/ZnMnSe quantum dots, InGaAs quantum wells, CdMnSe colloidal quantum dots, multi-shell CdSe/CdMnS/CdS colloidal nanoplatelets, and graphene and graphene-related solutions and films. Using time-resolved photoluminescence to study epitaxially-grown ZnTe and ZnMnTe quantum dots in corresponding ZnMnSe and ZnSe matrices, the location dependence of manganese ions in respect to magnetic polaron formation is shown. The structure with manganese ions located in the matrix exhibited magnetic polaron behavior consistent with previous literature, whereas the structure with the magnetic ions located within the quantum dots exhibited unconventional magnetic polaron properties. These properties, including temperature and magnetic field insensitivity, were explained through the use of a model that predicted an increased internal magnetic field due to a decreased effective volume of the magnetic polaron and a higher effective temperature due to laser heating. Magneto-time-resolved photoluminescence measurements on a system of colloidal CdMnSe quantum dots show that the magnetic polaron properties differ significantly from the epitaxially grown quantum dots. First the timescales at which the magnetic polaron forms and the polarization saturates are different by more than an order of magnitude, and second, the magnetic polaron energy exhibited step-like behavior as the strength of the externally applied magnetic field is increased. The field dependent MP formation energy that is observed experimentally is explained as due to the breaking of the antiferromagnetic coupling of Mn dimers within the QDs. This model is further verified by the observation of quantized behavior in the Zeeman energy splitting. Through the use of magneto

  10. Border trap reduction in Al{sub 2}O{sub 3}/InGaAs gate stacks

    SciTech Connect

    Tang, Kechao; McIntyre, Paul C.; Winter, Roy; Eizenberg, Moshe; Zhang, Liangliang; Droopad, Ravi

    2015-11-16

    The effect of Al{sub 2}O{sub 3} atomic layer deposition (ALD) temperature on the border trap density (N{sub bt}) of Al{sub 2}O{sub 3}/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces N{sub bt}. The reduction of N{sub bt} coincides with increased hydrogen incorporation in low temperature ALD-grown Al{sub 2}O{sub 3} films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In{sub 0.53}Ga{sub 0.47}As (100) surface to TMA immediately after thermal desorption of a protective As{sub 2} capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al{sub 2}O{sub 3}/InGaAs samples made at low ALD temperatures.

  11. An uncooled 1280 x 1024 InGaAs focal plane array for small platform, shortwave infrared imaging

    NASA Astrophysics Data System (ADS)

    Battaglia, J.; Blessinger, M.; Enriquez, M.; Ettenberg, M.; Evans, M.; Flynn, K.; Lin, M.; Passe, J.; Stern, M.; Sudol, T.

    2009-05-01

    The increasing demand for short wave infrared (SWIR) imaging technology for soldier-based and unmanned platforms requires camera systems where size, weight and power consumption are minimized without loss of performance. Goodrich, Sensors Unlimited Inc. reports on the development of a novel focal plane (FPA) array for DARPA's MISI (Micro-Sensors for Imaging) Program. This large format (1280 x 1024) array is optimized for day/night imaging in the wavelength region from 0.4 μm to 1.7 μm and consists of an InGaAs detector bump bonded to a capacitance transimpedance amplifier (CTIA)-based readout integrated circuit (ROIC) on a compact 15 μm pixel pitch. Two selectable integration capacitors provide for high dynamic range with low (< 50 electrons) noise, and expanded onchip ROIC functionality includes analog-to-digital conversion and temperature sensing. The combination of high quality, low dark current InGaAs with temperature-parameterized non-uniformity correction allows operation at ambient temperatures while eliminating the need for thermoelectric cooling. The resulting lightweight, low power implementation is suitable for man-portable and UAV-mounted applications.

  12. Electron and proton damage on InGaAs solar cells having an InP window layer

    NASA Technical Reports Server (NTRS)

    Messenger, Scott R.; Cotal, Hector L.; Walters, Robert J.; Summers, Geoffrey P.

    1995-01-01

    As part of a continuing program to determine the space radiation resistance of InP/ln(0.53)Ga(0.47)As tandem solar cells, n/p In(0.53)Ga(0. 47)As solar cells fabricated by RTI were irradiated with 1 MeV electrons and with 3 MeV protons. The cells were grown with a 3 micron n-lnP window layer to mimic the top cell in the tandem cell configuration for both AMO solar absorption and radiation effects. The results have been plotted against 'displacement damage dose' which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve can then be obtained for predicting the effect of all particles and energies. AMO, 1 sun solar illumination IV measurements were performed on the irradiated InGaAs solar cells and a characteristic radiation degradation curve was obtained using the solar cell conversion efficiency as the model parameter. Also presented are data comparing the radiation response of both n/p and p/n (fabricated by NREL) InGaAs solar cells as a function of base doping concentration. For the solar cell efficiency, the radiation degradation was found to be independent of the sample polarity for the same base doping concentration.

  13. Analysis of high frame rate readout circuit for near-infrared InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Huang, Zhangcheng; Chen, Yu; Huang, Songlei; Fang, Jiaxiong

    2013-09-01

    High frame rate imaging for applications such as meteorological forecast, motion target tracking require high-speed Read-Out Integrated Circuit (ROIC). In order to achieve 10 KHz of frame rate, this paper analyzes the bandwidth of Capacitive-feedback Trans-Impedance Amplifier (CTIA) in ROIC which is the dominant bandwidth-limiting node when interfaced with large InGaAs detector pixel capacitance of about 10pF. A small-signal model is presented to study the relationship between integration capacitance, detector capacitance, transconductance and CTIA bandwidth. Calculation and simulation results show explicitly how the series resistance at the interface restricts the frame rate of Focal Plane Arrays (FPA). In order to achieve low-noise performance at a high frame rate, this paper describes an optimal solution in ROIC design. A prototype ROIC chip (DL7) has been fabricated with 0.5-μm mixed signal CMOS process and interfaced with InGaAs detector arrays. Test results show that frame rate is above 10 KHz and ROIC noise is around 270 e-, near identical to the design value.

  14. Design of 800×2 low-noise readout circuit for near-infrared InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Huang, Zhangcheng; Huang, Songlei; Fang, Jiaxiong

    2012-12-01

    InGaAs near-infrared (NIR) focal plane arrays (FPA) have important applications in space remote sensing. A design of 800×2 low-noise readout integrated circuit (T800 ROIC) with a pitch of 25 μm is presented for a dual-band monolithic InGaAs FPA. Mathematical analysis and transient noise simulations have been presented for predicting and lowering the noise in T800 ROIC. Thermal noise from input-stage amplifier which plays a dominant role in ROIC is reduced by increasing load capacitor under tradeoff and a low input offset voltage in the range of +/-5 mV is obtained by optimizing transistors in the input-stage amplifier. T800 ROIC has been fabricated with 0.5-μm 5V mixed signal CMOS process and interfaced with InGaAs detector arrays. Test results show that ROIC noise is around 90 μV and input offset voltage shows a good correspondence with simulation results. 800×2 InGaAs FPA has a peak detectivity (D*) of about 1.1×1012 cmHz1/2/ W, with dynamic range of above 80dB.

  15. Ultra-low dark current InGaAs technology for focal plane arrays for low-light level visible-shortwave infrared imaging

    NASA Astrophysics Data System (ADS)

    Onat, Bora M.; Huang, Wei; Masaun, Navneet; Lange, Michael; Ettenberg, Martin H.; Dries, Christopher

    2007-04-01

    Under the DARPA Photon Counting Arrays (PCAR) program we have investigated technologies to reduce the overall noise level in InGaAs based imagers for identifying a man at 100m under low-light level imaging conditions. We report the results of our experiments comprising of 15 InGaAs wafers that were utilized to investigate lowering dark current in photodiode arrays. As a result of these experiments, we have achieved an ultra low dark current of 2nA/cm2 through technological advances in InGaAs detector design, epitaxial growth, and processing at a temperature of +12.3 degrees C. The InGaAs photodiode array was hybridized to a low noise readout integrated circuit, also developed under this program. The focal plane array (FPA) achieves very high sensitivity in the shortwave infrared bands in addition to the visible response added via substrate removal process post hybridization. Based on our current room-temperature stabilized SWIR camera platform, these imagers enable a full day-night imaging capability and are responsive to currently fielded covert laser designators, illuminators, and rangefinders. In addition, improved haze penetration in the SWIR compared to the visible provides enhanced clarity in the imagery of a scene. In this paper we show the results of our dark current studies as well as FPA characterization of the camera built under this program.

  16. Efficient eco-friendly inverted quantum dot sensitized solar cells† †Electronic supplementary information (ESI) available: TEM images of QDs, XPS spectra, UV-vis and PL spectra of the sensitized electrodes, details about photophysical characterization and IPCE spectra interpretation. See DOI: 10.1039/c5ta06769c Click here for additional data file.

    PubMed Central

    Park, Jinhyung; Sajjad, Muhammad T.; Jouneau, Pierre-Henri; Ruseckas, Arvydas; Faure-Vincent, Jérôme; Reiss, Peter

    2016-01-01

    Recent progress in quantum dot (QD) sensitized solar cells has demonstrated the possibility of low-cost and efficient photovoltaics. However, the standard device structure based on n-type materials often suffers from slow hole injection rate, which may lead to unbalanced charge transport. We have fabricated efficient p-type (inverted) QD sensitized cells, which combine the advantages of conventional QD cells with p-type dye sensitized configurations. Moreover, p-type QD sensitized cells can be used in highly promising tandem configurations with n-type ones. QDs without toxic Cd and Pb elements and with improved absorption and stability were successfully deposited onto mesoporous NiO electrode showing good coverage and penetration according to morphological analysis. Detailed photophysical charge transfer studies showed that high hole injection rates (108 s–1) observed in such systems are comparable with electron injection in conventional n-type QD assemblies. Inverted solar cells fabricated with various QDs demonstrate excellent power conversion efficiencies of up to 1.25%, which is 4 times higher than the best values for previous inverted QD sensitized cells. Attempts to passivate the surface of the QDs show that traditional methods of reduction of recombination in the QD sensitized cells are not applicable to the inverted architectures. PMID:27478616

  17. Low-noise InGaAs infrared 1.0- to 2.4-μm focal plane arrays for SCIAMACHY

    NASA Astrophysics Data System (ADS)

    van der A, Ronald J.; Hoogeveen, Ruud W. M.; Spruijt, Hugo J.; Goede, Albert P. H.

    1997-01-01

    SCIAMACHY has been selected for the ESA environmental satellite ENVISAT with the objective to carry out atmospheric research in the UV, VIS, and IR spectral range. The most innovative parts of the instrument are the low- noise InGaAs semiconductor focal plane arrays covering the 1.0-2.4 micrometers wavelength range. For the first time InGaAs focal plane arrays with an extended wavelength range have become space qualified. In this paper theory and measurement of the dark current and noise behavior of these detectors is presented. Each InGaAs focal plane array consists of a 1024 pixel linear photo-detecting sliver and two 512 pixel multiplexing read-out chips. Each multiplexer contains 512 individual charge transimpedance amplifier and correlated double sampling circuits. A cylindrical lens, integrated in the detector housing, focuses the light on detector in the cross-dispersion direction. The InGaAs composition of the detectors is tuned to match the required wavelength range. Measurements have been performed of the dark current and noise as function of temperature and bias voltage in order to relate their performance to theory presented in this paper. InGaAs detectors sensitive to 2400 nm wavelength achieve dark current levels as low as 20-100 fA per detector pixel area of 1.25 (DOT) 10-4 cm2 at an operating temperature of 150 K and a bias voltage of 2 mV. Lower temperatures further reduce the dark current but also decrease the quantum efficiency at long wavelengths, yielding no net gain in performance. The development programme of these SCIAMACHY detectors has been carried out by Epitaxx Inc., for and in cooperation with the Space Research Organization Netherlands.

  18. Fluorescence ELISA for sensitive detection of ochratoxin A based on glucose oxidase-mediated fluorescence quenching of CdTe QDs.

    PubMed

    Liang, Yi; Huang, Xiaolin; Yu, Ruijin; Zhou, Yaofeng; Xiong, Yonghua

    2016-09-14

    The present study described a novel fluorescence enzyme-linked immunosorbent assay (ELISA) used to detect ochratoxin A (OTA) by using the glucose oxidase (GOx)-mediated fluorescence quenching of mercaptopropionic acid-capped CdTe quantum dots (MPA-QDs), in which GOx was used as an alternative to horseradish peroxidase (HRP) for the oxidization of glucose into hydrogen peroxide (H2O2) and gluconic acid. The MPA-QDs were used as a fluorescent signal output, whose fluorescence variation was extremely sensitive to the presence of H2O2 or hydrogen ions in the solution. Under the optimized conditions, the proposed fluorescence ELISA demonstrated a good linear detection of OTA in corn extract from 2.4 pg mL(-1) to 625 pg mL(-1) with a limit of detection of 2.2 pg mL(-1), which was approximately 15-fold lower than that of conventional HRP-based ELISA. Our developed fluorescence immunoassay was also similar to HRP-based ELISA in terms of selectivity, accuracy, and reproducibility. In summary, this study was the first to use the GOx-mediated fluorescence quenching of QDs in immunoassay to detect OTA, offering a new possibility for the analysis of other mycotoxins and biomolecules. PMID:27566355

  19. Constructing a MoS₂ QDs/CdS Core/Shell Flowerlike Nanosphere Hierarchical Heterostructure for the Enhanced Stability and Photocatalytic Activity.

    PubMed

    Liang, Shijing; Zhou, Zhouming; Wu, Xiuqin; Zhu, Shuying; Bi, Jinhong; Zhou, Limin; Liu, Minghua; Wu, Ling

    2016-01-01

    MoS₂ quantum dots (QDs)/CdS core/shell nanospheres with a hierarchical heterostructure have been prepared by a simple microwave hydrothermal method. The as-prepared samples are characterized by XRD, TEM, SEM, UV-VIS diffuse reflectance spectra (DRS) and N₂-sorption in detail. The photocatalytic activities of the samples are evaluated by water splitting into hydrogen. Results show that the as-prepared MoS₂ QDs/CdS core/shell nanospheres with a diameter of about 300 nm are composed of the shell of CdS nanorods and the core of MoS₂ QDs. For the photocatalytic reaction, the samples exhibit a high stability of the photocatalytic activity and a much higher hydrogen evolution rate than the pure CdS, the composite prepared by a physical mixture, and the Pt-loaded CdS sample. In addition, the stability of CdS has also been greatly enhanced. The effect of the reaction time on the formations of nanospheres, the photoelectric properties and the photocatalytic activities of the samples has been investigated. Finally, a possible photocatalytic reaction process has also been proposed. PMID:26891284

  20. Secondary coordination sphere accelerates hole transfer for enhanced hydrogen photogeneration from [FeFe]-hydrogenase mimic and CdSe QDs in water.

    PubMed

    Wen, Min; Li, Xu-Bing; Jian, Jing-Xin; Wang, Xu-Zhe; Wu, Hao-Lin; Chen, Bin; Tung, Chen-Ho; Wu, Li-Zhu

    2016-01-01

    Achieving highly efficient hydrogen (H2) evolution via artificial photosynthesis is a great ambition pursued by scientists in recent decades because H2 has high specific enthalpy of combustion and benign combustion product. [FeFe]-Hydrogenase ([FeFe]-H2ase) mimics have been demonstrated to be promising catalysts for H2 photoproduction. However, the efficient photocatalytic H2 generation system, consisting of PAA-g-Fe2S2, CdSe QDs and H2A, suffered from low stability, probably due to the hole accumulation induced photooxidation of CdSe QDs and the subsequent crash of [FeFe]-H2ase mimics. In this work, we take advantage of supramolecular interaction for the first time to construct the secondary coordination sphere of electron donors (HA(-)) to CdSe QDs. The generated secondary coordination sphere helps realize much faster hole removal with a ~30-fold increase, thus leading to higher stability and activity for H2 evolution. The unique photocatalytic H2 evolution system features a great increase of turnover number to 83600, which is the highest one obtained so far for photocatalytic H2 production by using [FeFe]-H2ase mimics as catalysts. PMID:27417065

  1. Secondary coordination sphere accelerates hole transfer for enhanced hydrogen photogeneration from [FeFe]-hydrogenase mimic and CdSe QDs in water

    PubMed Central

    Wen, Min; Li, Xu-Bing; Jian, Jing-Xin; Wang, Xu-Zhe; Wu, Hao-Lin; Chen, Bin; Tung, Chen-Ho; Wu, Li-Zhu

    2016-01-01

    Achieving highly efficient hydrogen (H2) evolution via artificial photosynthesis is a great ambition pursued by scientists in recent decades because H2 has high specific enthalpy of combustion and benign combustion product. [FeFe]-Hydrogenase ([FeFe]-H2ase) mimics have been demonstrated to be promising catalysts for H2 photoproduction. However, the efficient photocatalytic H2 generation system, consisting of PAA-g-Fe2S2, CdSe QDs and H2A, suffered from low stability, probably due to the hole accumulation induced photooxidation of CdSe QDs and the subsequent crash of [FeFe]-H2ase mimics. In this work, we take advantage of supramolecular interaction for the first time to construct the secondary coordination sphere of electron donors (HA−) to CdSe QDs. The generated secondary coordination sphere helps realize much faster hole removal with a ~30-fold increase, thus leading to higher stability and activity for H2 evolution. The unique photocatalytic H2 evolution system features a great increase of turnover number to 83600, which is the highest one obtained so far for photocatalytic H2 production by using [FeFe]-H2ase mimics as catalysts. PMID:27417065

  2. Secondary coordination sphere accelerates hole transfer for enhanced hydrogen photogeneration from [FeFe]-hydrogenase mimic and CdSe QDs in water

    NASA Astrophysics Data System (ADS)

    Wen, Min; Li, Xu-Bing; Jian, Jing-Xin; Wang, Xu-Zhe; Wu, Hao-Lin; Chen, Bin; Tung, Chen-Ho; Wu, Li-Zhu

    2016-07-01

    Achieving highly efficient hydrogen (H2) evolution via artificial photosynthesis is a great ambition pursued by scientists in recent decades because H2 has high specific enthalpy of combustion and benign combustion product. [FeFe]-Hydrogenase ([FeFe]-H2ase) mimics have been demonstrated to be promising catalysts for H2 photoproduction. However, the efficient photocatalytic H2 generation system, consisting of PAA-g-Fe2S2, CdSe QDs and H2A, suffered from low stability, probably due to the hole accumulation induced photooxidation of CdSe QDs and the subsequent crash of [FeFe]-H2ase mimics. In this work, we take advantage of supramolecular interaction for the first time to construct the secondary coordination sphere of electron donors (HA‑) to CdSe QDs. The generated secondary coordination sphere helps realize much faster hole removal with a ~30-fold increase, thus leading to higher stability and activity for H2 evolution. The unique photocatalytic H2 evolution system features a great increase of turnover number to 83600, which is the highest one obtained so far for photocatalytic H2 production by using [FeFe]-H2ase mimics as catalysts.

  3. Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

    PubMed

    Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

    2016-06-27

    We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer

  4. Growth-temperature dependence of optical spin-injection dynamics in self-assembled InGaAs quantum dots

    SciTech Connect

    Yamamura, Takafumi; Kiba, Takayuki; Yang, Xiaojie; Takayama, Junichi; Subagyo, Agus; Sueoka, Kazuhisa; Murayama, Akihiro

    2014-09-07

    The growth-temperature dependence of the optical spin-injection dynamics in self-assembled quantum dots (QDs) of In{sub 0.5}Ga{sub 0.5}As was studied by increasing the sheet density of the dots from 2 × 10{sup 10} to 7 × 10{sup 10} cm{sup −2} and reducing their size through a decrease in growth temperature from 500 to 470 °C. The circularly polarized transient photoluminescence (PL) of the resulting QD ensembles was analyzed after optical excitation of spin-polarized carriers in GaAs barriers by using rate equations that take into account spin-injection dynamics such as spin-injection time, spin relaxation during injection, spin-dependent state-filling, and subsequent spin relaxation. The excitation-power dependence of the transient circular polarization of PL in the QDs, which is sensitive to the state-filling effect, was also examined. It was found that a systematic increase occurs in the degree of circular polarization of PL with decreasing growth temperature, which reflects the transient polarization of exciton spin after spin injection. This is attributed to strong suppression of the filling effect for the majority-spin states as the dot-density of the QDs increases.

  5. Facile synthesis of QD-anchored composite particles with magnetite cluster cores ({sup n}Fe{sub 3}O{sub 4}@SiO{sub 2}@QDs)

    SciTech Connect

    Oh, Hang-Deok; Lee, Sang-Wha

    2013-06-01

    Highlights: ► Triple layered Fe{sub 3}O{sub 4}/SiO{sub 2}/QDs were designed as fluorescent magnetic nanocomposites. ► Magnetite cluster-embedded silica exhibited strong and controllable magnetism. ► Effective conjugation between QDs and magnetic silica occurred at pH3. - Abstract: Magnetism-controlled fluorescent composite particles ({sup n}Fe{sub 3}O{sub 4}@SiO{sub 2}@QDs) were prepared as QD-anchored silica nanoparticles with magnetite cluster cores. First, citrate-capped magnetites (C-Fe{sub 3}O{sub 4}) were prepared by the co-precipitation method and subsequently complexed with 3-aminopropyl-trimethoxysilane (APTMS) at room temperature, consequently leading to the formation of magnetite clusters (A-{sup n}Fe{sub 3}O{sub 4}) with alkoxy terminated interfaces. The sol–gel reaction between A-{sup n}Fe{sub 3}O{sub 4} and tetraethoxysilane (TEOS) produced the core-shell {sup n}Fe{sub 3}O{sub 4}@SiO{sub 2}. The resulting core-shell particles exhibited superparamagnetic properties and controllable magnetism simply by adjusting the thickness of nonmagnetic silica layer. After then, amine-terminated {sup n}Fe{sub 3}O{sub 4}@SiO{sub 2} (NH{sub 2}–{sup n}Fe{sub 3}O{sub 4}@SiO{sub 2}) was conjugated with carboxy quantum dots (QDs) using an EDC coupling agent. The QD conjugation with NH{sub 2}–{sup n}Fe{sub 3}O{sub 4}@SiO{sub 2} of lower pH exhibited the higher photoluminescence (PL) intensity, and the resulting composite particles ({sup n}Fe{sub 3}O{sub 4}@SiO{sub 2}@QDs) can be a useful biomedical agent. This chemical strategy can be further applied to prepare the core-shell magnetic nanostructure with various oxide layers for specific applications.

  6. New design of InGaAs guided-mode resonance photodiode for SWIR low dark current imaging

    NASA Astrophysics Data System (ADS)

    Verdun, Michaël.; Portier, Benjamin; Jaworowicz, Katarzyna; Jaeck, Julien; Dupuis, Christophe; Haidar, Riad; Pardo, Fabrice; Pelouard, Jean-Luc

    2016-04-01

    We investigate a full-dielectric guided mode resonant photodiode. It has been designed to enhance the absorption by excitation of several resonances in the SWIR domain. The device consists of an InP/InGaAs/InP P-i-N heterojunction containing an active layer as thin as 90 nm on top of a subwavelength lamellar grating and a gold mirror. We successfully compared the electro-optical characterizations of individual pixels with electro-magnetic simulations. In particular, we observe near perfect collection of the photo-carriers and external quantum efficiency (EQE) of up to 71% around 1.55 μm. Moreover, compared with InGaAs resonator state-of-the-art detector, we show a broader spectral response in the 1.2-1.7 μm range, thus paving the way for SWIR low dark current imaging.

  7. Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

    NASA Astrophysics Data System (ADS)

    Palumbo, F.; Shekhter, P.; Cohen Weinfeld, K.; Eizenberg, M.

    2015-09-01

    In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.

  8. Experimental demonstration of hot-carrier photo-current in an InGaAs quantum well solar cell

    SciTech Connect

    Hirst, L. C.; Walters, R. J.; Führer, M. F.; Ekins-Daukes, N. J.

    2014-06-09

    An unambiguous observation of hot-carrier photocurrent from an InGaAs single quantum well solar cell is reported. Simultaneous photo-current and photoluminescence measurements were performed for incident power density 0.04–3 kW cm{sup −2}, lattice temperature 10 K, and forward bias 1.2 V. An order of magnitude photocurrent increase was observed for non-equilibrium hot-carrier temperatures >35 K. This photocurrent activation temperature is consistent with that of equilibrium carriers in a lattice at elevated temperature. The observed hot-carrier photo-current is extracted from the well over an energy selective GaAs barrier, thus integrating two essential components of a hot-carrier solar cell: a hot-carrier absorber and an energy selective contact.

  9. Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot

    NASA Astrophysics Data System (ADS)

    Hackens, B.; Delfosse, F.; Faniel, S.; Gustin, C.; Boutry, H.; Wallart, X.; Bollaert, S.; Cappy, A.; Bayot, V.

    2002-12-01

    We measure the electron phase-coherence time τφ up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of τφ is quantitatively consistent with the two-dimensional model of electron-electron interactions in disordered systems. In our sample, τφ is two to four times larger than previously reported in GaAs quantum dots. We attribute this enhancement to a larger value of the Fermi energy and the lower electron effective mass in our sample. We also observe a distinct type of conductance fluctuation due to ballistic electron focusing inside the dot up to 204 K.

  10. Compact fiber-pigtailed InGaAs photoconductive antenna module for terahertz-wave generation and detection.

    PubMed

    Han, Sang-Pil; Kim, Namje; Ko, Hyunsung; Ryu, Han-Cheol; Park, Jeong-Woo; Yoon, Young-Jong; Shin, Jun-Hwan; Lee, Dong Hun; Park, Sang-Ho; Moon, Seok-Hwan; Choi, Sung-Wook; Chun, Hyang Sook; Park, Kyung Hyun

    2012-07-30

    We propose a compact fiber-pigtailed InGaAs photoconductive antenna (FPP) module having an effective heat-dissipation solution as well as a module volume of less than 0.7 cc. The heat-dissipation of the FPP modules when using a heat-conductive printed circuit board (PCB) and an aluminium nitride (AlN) submount, without any cooling systems, improve by 40% and 85%, respectively, when compared with a photoconductive antenna chip on a conventional PCB. The AlN submount is superior to those previously reported as a heat-dissipation solution. Terahertz time-domain spectroscopy (THz-TDS) using the FPP module perfectly detects the absorption lines of water vapor in free space and an α-lactose sample. PMID:23038394

  11. Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals.

    PubMed

    Komsa, Hannu-Pekka; Pasquarello, Alfredo

    2012-02-01

    The formation energies and charge transition levels of vacancy and antisite defects in GaAs and In(0.5)Ga(0.5)As are calculated through hybrid density functionals. In As-rich conditions, the As antisite is the most stable defect in both GaAs and InGaAs, except for n-type GaAs for which the Ga vacancy is favored. The Ga antisite shows the lowest formation energy in Ga-rich conditions. The As antisite provides a consistent interpretation of the defect densities measured at mid-gap for both GaAs/oxide and InGaAs/oxide interfaces. PMID:22214854

  12. Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission

    NASA Astrophysics Data System (ADS)

    Brennan, B.; Hughes, G.

    2010-09-01

    A high resolution synchrotron radiation core level photoemission study of the native oxides on In0.53Ga0.47As was carried out in order to determine the various oxidation states present on the surface. The thermal stability of the oxidation states was also investigated by annealing the samples in vacuum at temperatures ranging from 150 to 450 °C. As well as the widely reported oxidation states, various arsenic, gallium, and indium oxides, along with mixed phase gallium arsenic and indium gallium oxides are identified. Elemental binary oxides have been identified as residing at the oxide substrate interface and could play an important role in understanding the growth of metal oxide dielectric layers on the InGaAs surface, due to their apparent chemical stability.

  13. Sensitivity and noise of micro-Hall magnetic sensors based on InGaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Chenaud, B.; Segovia-Mera, A.; Delgard, A.; Feltin, N.; Hoffmann, A.; Pascal, F.; Zawadzki, W.; Mailly, D.; Chaubet, C.

    2016-01-01

    We study the room-temperature performance of micro-Hall magnetic sensors based on pseudomorphic InGaAs quantum wells. Active areas of our sensors range from 1 to 80 μm. We focus on the smallest detectable magnetic fields in small sensors and perform a systematic study of noise at room temperature in the frequency range between 1 Hz and 100 kHz. Our data are interpreted by the mobility fluctuation model. The Hooge parameter is determined for the applied technology. We show that, independently of the experimental frequency, the ratio of sensitivity to noise is proportional to characteristic length of the sensor. The resolution of 1 mG/√{Hz } is achievable in a 3 μm sensor at room temperature.

  14. Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

    NASA Astrophysics Data System (ADS)

    Winter, R.; Krylov, I.; Cytermann, C.; Tang, K.; Ahn, J.; McIntyre, P. C.; Eizenberg, M.

    2015-08-01

    The effect of post metal deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al2O3 interface.

  15. An InGaAs detector based radiation thermometer and fixed-point blackbodies for temperature scale realization at NIM

    SciTech Connect

    Hao, X.; Yuan, Z.; Wang, J.; Lu, X.

    2013-09-11

    In this paper, we describe an InGaAs detector based radiation thermometer (IRT) and new design of fixed-point blackbodies, including Sn, Zn, Al and Cu, for the establishment of a temperature scale from 200 °C to 1085 °C at the National Institute of Metrology of China. The construction and calibration of the IRT with the four fixed-point blackbodies are described. Characteristics of the IRT, such as the size-of-source effect, the amplifier performance and its stability are determined. The design of the four fixed-points, with 10 mm diameter of aperture and 0.9999 emissivity, is described. The uncertainty of the scale realization is elaborated.

  16. An InGaAs detector based radiation thermometer and fixed-point blackbodies for temperature scale realization at NIM

    NASA Astrophysics Data System (ADS)

    Hao, X.; Yuan, Z.; Wang, J.; Lu, X.

    2013-09-01

    In this paper, we describe an InGaAs detector based radiation thermometer (IRT) and new design of fixed-point blackbodies, including Sn, Zn, Al and Cu, for the establishment of a temperature scale from 200 °C to 1085 °C at the National Institute of Metrology of China. The construction and calibration of the IRT with the four fixed-point blackbodies are described. Characteristics of the IRT, such as the size-of-source effect, the amplifier performance and its stability are determined. The design of the four fixed-points, with 10 mm diameter of aperture and 0.9999 emissivity, is described. The uncertainty of the scale realization is elaborated.

  17. Spectral imaging of chemical compounds using multivariate optically enhanced filters integrated with InGaAs VGA cameras

    NASA Astrophysics Data System (ADS)

    Priore, Ryan J.; Jacksen, Niels

    2016-05-01

    Infrared hyperspectral imagers (HSI) have been fielded for the detection of hazardous chemical and biological compounds, tag detection (friend versus foe detection) and other defense critical sensing missions over the last two decades. Low Size/Weight/Power/Cost (SWaPc) methods of identification of chemical compounds spectroscopy has been a long term goal for hand held applications. We describe a new HSI concept for low cost / high performance InGaAs SWIR camera chemical identification for military, security, industrial and commercial end user applications. Multivariate Optical Elements (MOEs) are thin-film devices that encode a broadband, spectroscopic pattern allowing a simple broadband detector to generate a highly sensitive and specific detection for a target analyte. MOEs can be matched 1:1 to a discrete analyte or class prediction. Additionally, MOE filter sets are capable of sensing an orthogonal projection of the original sparse spectroscopic space enabling a small set of MOEs to discriminate a multitude of target analytes. This paper identifies algorithms and broadband optical filter designs that have been demonstrated to identify chemical compounds using high performance InGaAs VGA detectors. It shows how some of the initial models have been reduced to simple spectral designs and tested to produce positive identification of such chemicals. We also are developing pixilated MOE compressed detection sensors for the detection of a multitude of chemical targets in challenging backgrounds/environments for both commercial and defense/security applications. This MOE based, real-time HSI sensor will exhibit superior sensitivity and specificity as compared to currently fielded HSI systems.

  18. The Electronic Structure of Cd33Se33 Quantum Dots Passivated with Various [Me(bpy)3]2+ Complexes: A Comparative Study Based on DFT and TDDFT Simulation

    NASA Astrophysics Data System (ADS)

    Cui, Peng; Mayo, Michael; Kilina, Svetlana

    2013-03-01

    Quantum dots (QDs) have attracted a great deal of attention in recent years, in part, due to their tunable photoelectric properties. In particular, the use of ligands to passivate the surface of QDs was found to introduce hybrid band structures which could affect the photoelectric properties of QDs. Specifically, it has been shown that the photon-electron relaxation rate of QDs can be accelerated by surface passivation with ligands. The bipyridine dye has the lowest exciting energy due to the metal to ligand charge transfer in nature, so in this study we investigated different tris(bipyridine) metal(II) complex ([Me(bpy)3]2+ (Me =Cadmium, Chromium, Iron, Osmium, Nickel, Ruthenium) ligands to passivate the surface of Cd33Se33 (QDs). We also investigate the hybrid band structure and absorption spectrum. The QDs-[Me(bpy)3]2+ structure was optimized through density functional method (DFT), and the density of states of different components of QDs-[Me(bpy)3]2+ was revealed. The bypiridine was found to introduce a lower conduction band into QDs, and the valence band of the metal was found close to the edge of valence band of QDs after adding solvent. In addition, we use time dependent density functional theory (TDDFT) to study the excited electron states of the hybrid structure.

  19. The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stack

    SciTech Connect

    Winter, R.; Krylov, I.; Eizenberg, M.; Ahn, J.; McIntyre, P. C.

    2014-05-19

    The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al{sub 2}O{sub 3}/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.

  20. The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor

    NASA Astrophysics Data System (ADS)

    Wang, Rui; Li, Tao; Shao, Xiumei; Li, Xue; Gong, Haimei

    2015-07-01

    We numerically demonstrate the integration of gold wire grid polarizer on InP substrate for InGaAs polarimetric imaging. The effective spectral range of wire grid polarizer has been designed in 0.8-3 μm according to InGaAs response waveband. The dips in TM transmission are observed due to surface plasmon (SPs) significantly damaging polarization performance. To further understand the coupling mechanism between gold wire grid grating and InP, the different contributions of surface plasmon polariton (SPP) and localized surface plasmon (LSP) to the dips are analyzed. Both transmission and reflectance spectra are simulated at different grating periods and duty cycles by finite-different time-domain (FDTD) method. LSP wavelength is located at around 1 μm and sensitive to the specific shape of metal wire. SPP presents higher resonance wavelength closely related to grating period. The simulations of electric field distribution show the same results.

  1. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

    SciTech Connect

    Shin, H. S.; Yum, J. H.; Johnson, D. W.; Harris, H. R.; Hudnall, Todd W.; Oh, J.; Kirsch, P.; Wang, W.-E.; Bielawski, C. W.; Banerjee, S. K.; Lee, J. C.; Lee, H. D.

    2013-11-25

    In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

  2. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

    1998-11-23

    A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

  3. Structural and optical characterization of pure and starch-capped ZnO quantum dots and their photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Vidhya, K.; Saravanan, M.; Bhoopathi, G.; Devarajan, V. P.; Subanya, S.

    2015-02-01

    Among the different types of metal oxides, zinc oxide (ZnO) is a most commonly used metal oxide in a broad variety of applications. In the present investigation, a modified green synthesis route was used to synthesize pure and starch-capped ZnO (ZnO/starch) quantum dots (QDs) and studied their structural and optical characteristics. In this study, hexagonal crystal structure was observed in both pure and ZnO/starch QDs using X-ray diffraction technique. A spherical-shaped surface morphology was found with the size of 5-10 nm using transmission electron microscope technique. The interaction between ZnO QDs and starch molecules was proved via Fourier infra-red spectrometer technique. On the other hand, their fluorescence behaviors were investigated using photoluminescence technique, in that the ZnO/starch QDs showed an enhanced emission behavior when compared to the pure ZnO QDs. Further, the solar photocatalytic activity of both the ZnO QDs was examined with the dye Rhodamine B (RhB) at the end of 30, 60, 90, and 120 min. In this, ZnO/starch QDs show a good and more decomposition of RhB than pure ZnO QDs. Collectively, in the present study, green synthesis route produced an efficient QDs (pure and ZnO/starch) and it will be very useful for many other QDs. The ZnO/starch QDs are suitable for decomposing the RhB and other toxic organic dyes.

  4. Toward a single-chip TECless/NUCless InGaAs SWIR camera with 120-dB intrinsic operation dynamic range

    NASA Astrophysics Data System (ADS)

    Ni, Y.; Arion, B.; Zhu, Y. M.; Potet, P.; Huet, Odile; Reverchon, Jean Luc; Truffer, Jean Patrick; Robo, Jean Alexandre; Costard, Eric

    2011-06-01

    This paper describes a single-chip InGaAs SWIR camera with more than 120dB instant operational dynamic range with an innovative CMOS ROIC technology, so called MAGIC, invented and patented by New Imaging Technologies. A 320x256- pixel InGaAs 25μm pitch photodiode array, designed and fabricated by III-Vlab/Thales Research & Technology(TRT), has been hybridized on this new generation CMOS ROIC. With NIT's MAGIC technology, the sensor's output follows a precise logarithmic law in function of incoming photon flux and gives instant operational dynamic range (DR) better than 120 dB. The ROIC incorporates the entire video signal processing function including a CCIR TV encoder, so a complete SWIR InGaAs camera with standard video output has been realized on a single 30x30 mm2 PCB board with ¼ W power consumption. Neither TEC nor NUC is needed from room temperature operation. The camera can be switched on and off instantly, ideal for all the portable battery operated SWIR band observation applications. The measured RMS noise and FPN noise on the prototype sensor in dark conditions are 0.4 mV and 0.27 mV respectively. The signal excursion from pixel is about 300mV over the 120 dB dynamic range. The FPN remains almost constant over the whole operation dynamic range. The NEI has been measured to be 3,71E+09 ph/s/cm2 with 92 equivalent noise photons at 25Hz frame rate, better than the same architecture of InGaAs photodiode array hybridized on an Indigo ROIC ISC9809 with a pitch of 30 μm for which a readout noise of 120 electrons is observed.

  5. Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.

    PubMed

    Edmonds, Mary; Kent, Tyler; Chagarov, Evgueni; Sardashti, Kasra; Droopad, Ravi; Chang, Mei; Kachian, Jessica; Park, Jun Hong; Kummel, Andrew

    2015-07-01

    A saturated Si-Hx seed layer for gate oxide or contact conductor ALD has been deposited via two separate self-limiting and saturating CVD processes on InGaAs(001)-(2 × 4) at substrate temperatures of 250 and 350 °C. For the first self-limiting process, a single silicon precursor, Si3H8, was dosed at a substrate temperature of 250 °C, and XPS results show the deposited silicon hydride layer saturated at about 4 monolayers of silicon coverage with hydrogen termination. STS results show the surface Fermi level remains unpinned following the deposition of the saturated silicon hydride layer, indicating the InGaAs surface dangling bonds are electrically passivated by Si-Hx. For the second self-limiting process, Si2Cl6 was dosed at a substrate temperature of 350 °C, and XPS results show the deposited silicon chloride layer saturated at about 2.5 monolayers of silicon coverage with chlorine termination. Atomic hydrogen produced by a thermal gas cracker was subsequently dosed at 350 °C to remove the Si-Cl termination by replacing with Si-H termination as confirmed by XPS, and STS results confirm the saturated Si-Hx bilayer leaves the InGaAs(001)-(2 × 4) surface Fermi level unpinned. Density function theory modeling of silicon hydride surface passivation shows an Si-Hx monolayer can remove all the dangling bonds and leave a charge balanced surface on InGaAs. PMID:26070022

  6. Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

    NASA Astrophysics Data System (ADS)

    Cipro, R.; Baron, T.; Martin, M.; Moeyaert, J.; David, S.; Gorbenko, V.; Bassani, F.; Bogumilowicz, Y.; Barnes, J. P.; Rochat, N.; Loup, V.; Vizioz, C.; Allouti, N.; Chauvin, N.; Bao, X. Y.; Ye, Z.; Pin, J. B.; Sanchez, E.

    2014-06-01

    Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO2 cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. The InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.

  7. High-speed InGaAs thin film MSM photodetector characterization using a fiber-based electro-optic sampling system

    NASA Astrophysics Data System (ADS)

    Seo, Sang-Woo; Cho, Sang-Yeon; Huang, Sa; Brown, April; Jokerst, Nan M.

    2004-06-01

    As optoelectronic devices increase in speed, the measurement system used to characterize these devices must have sufficient bandwidth and minimum parasitic loading during test to accurately determine the intrinsic performance of the device under test. Conventional electrical measurement systems have an intrinsic bandwidth due to the available components for test and have parasitic loading due to direct electrical contact to the device under the test. Electro-optic sampling is an excellent measurement technique for characterizing ultra-fast devices because it has high bandwidth, is non-contact, is non-destructive, and relatively non-invasive. In this paper, an optical fiber-based electro-optic sampling system is designed and used for characterizing high speed InGaAs thin film MSM photodetectors. A fiber laser which is operating at 1556 nm wavelength was used for the sampling and excitation beam. Optical fibers were used to connect each component in the system for flexibility. InGaAs thin film MSM photodetectors were fabricated and characterized. InGaAs thin film MSM photodetectors were bonded onto a coplanar strip line deposited on a benzocyclobutene (BCB)-coated glass substrate for characterization. These thin film photodetectors show high speed operation combined with high responsivity and large detection area compared to P-I-N photodetectors operating at similar speeds

  8. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

    PubMed

    Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

    2016-06-01

    Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs. PMID:27427737

  9. Fabrication and cyto-compatibility of Fe3O4/SiO2/graphene-CdTe QDs/CS nanocomposites for drug delivery.

    PubMed

    Ou, Jun; Wang, Fang; Huang, Yuanjie; Li, Duosheng; Jiang, Yuming; Qin, Qing-Hua; Stachurski, Z H; Tricoli, Antonio; Zhang, Tina

    2014-05-01

    Synthesis of magnetic Fe3O4/SiO2/graphene-CdTe QDs/chitosan nanocomposites (FGQCs) is investigated with respect to their potential of improving the drug loading content above that of magnetic/fluorescent bifunctional nanocomposites. To evaluate the performance of the FGQCs, their surface morphology was thoroughly assessed. The in vitro interaction between the FGQCs and heptoma cell line smmc-7721 cells was observed for the first time by TEM ultrathin section imaging. At an excitation wavelength of 365 nm, the graphene-QDs exhibit a strong luminescence in aqueous environments. The loading content and entrapment efficiency of the FGQCs were 70% and 50%, respectively. The cytotoxicity of this novel drug delivery system was evaluated in vitro using heptoma cell line smmc-7721 and quantified by the 3-(4,5-dimethylthiazol-z-yl)-2,5-diphenyltetrazolium bromide (MTT) assay. The results show that FGQCs are a promising new multifunctional material for drug delivery in biological and medical applications. PMID:24373978

  10. Preparation of pH-stimuli-responsive PEG-TGA/TGH-capped CdTe QDs and their application in cell labeling.

    PubMed

    Du, Yan; Yang, Dongzhi; Sun, Shian; Zhao, Ziming; Tang, Daoquan

    2015-08-01

    A pH-sensitive and double functional nanoprobe was designed and synthesized in a water-soluble system using thioglycolic acid (TGA) and mercapto-acetohydrazide (TGH) as the stabilizers. TGA is biocompatible because the carboxyl group is easily linked to biological macromolecules. At the same time, the hydrazide on TGH reacts with the aldehyde on poly(ethylene glycol) (PEG) and forms a hydrazone bond. The hydrazone bond ruptured at specific pH values and exhibited pH-stimuli-responsive characteristics. As an optical imaging probe, the PEG-TGA/TGH-capped CdTe quantum dots (QDs) had high quality, with a fluorescence efficiency of 25-30%, and remained stable for at least five months. This pH-responsive factor can be used for the effective release of CdTe QDs under the acidic interstitial extracellular environment of tumor cells. This allows the prepared pH-stimuli-responsive nanoprobes to show fluorescence signals for use in cancer cell imaging. PMID:25244429

  11. An ultrasensitive "on-off-on" photoelectrochemical aptasensor based on signal amplification of a fullerene/CdTe quantum dots sensitized structure and efficient quenching by manganese porphyrin.

    PubMed

    Li, Mengjie; Zheng, Yingning; Liang, Wenbin; Yuan, Yali; Chai, Yaqin; Yuan, Ruo

    2016-06-21

    In this work, an ultrasensitive "on-off-on" photoelectrochemical (PEC) aptasensor was proposed based on the signal amplification of a fullerene/CdTe quantum dot (nano-C60/CdTe QDs) sensitized structure and efficient signal quenching of nano-C60/CdTe QDs by a manganese porphyrin (MnPP). PMID:27272457

  12. InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz

    NASA Astrophysics Data System (ADS)

    Wen-Jeng Ho; Ting-Arn Dai; Zuon-Ming Chuang; Wei Lin; Yuan-Kuang Tu; Meng-Chyi Wu

    1995-07-01

    The top-illuminated InGaAs PIN photodiodes have been fabricated from materials grown by metalorganic vapor phase epitaxy. Using the planar air-bridge approach and the selective etching technique, it can eliminate the significant bondpad capacitance which is present in conventional PIN photodiodes on conducting substrates. Besides, a self-aligned lift-off process is used for the n-contact recess and metallization. The anti-reflection coating devices have responsivity of 0.79 and 0.78 A/W at 1.3 and 1.55 μm, respectively. The fabricated devices with 30 μm photosensitive diameter have a very low dark current below 0.2 nA and low capacitance of 143 fF at -5V bias voltage. The 3-dB bandwidth of these devices is in excess of 14.8 GHz which is in good agreement with the calculated minority-carrier transit time through an absorbing layer thickness of 1.85 μm. The device performance reveals that these devices are potentially suitable for the applications in optoelectronic integrated circuits.

  13. A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

    SciTech Connect

    Reithmaier, G. Flassig, F.; Hasch, P.; Lichtmannecker, S.; Kaniber, M.; Müller, K.; Vučković, J.; Gross, R.; Finley, J. J.

    2014-08-25

    Using integrated superconducting single photon detectors, we probe ultra-slow exciton capture and relaxation dynamics in single self-assembled InGaAs quantum dots embedded in a GaAs ridge waveguide. Time-resolved luminescence measurements performed with on- and off-chip detection reveal a continuous decrease in the carrier relaxation time from 1.22 ± 0.07 ns to 0.10 ± 0.07 ns upon increasing the number of non-resonantly injected carriers. By comparing off-chip time-resolved spectroscopy with spectrally integrated on-chip measurements, we identify the observed dynamics in the rise time (τ{sub r}) as arising from a relaxation bottleneck at low excitation levels. From the comparison with the temporal dynamics of the single exciton transition with the on-chip emission signal, we conclude that the relaxation bottleneck is circumvented by the presence of charge carriers occupying states in the bulk material and the two-dimensional wetting layer continuum. A characteristic τ{sub r} ∝ P{sup −2∕3} power law dependence is observed suggesting Auger-type scattering between carriers trapped in the quantum dot and the two-dimensional wetting layer continuum which circumvents the phonon relaxation bottleneck.

  14. Reliability and performance of InGaAs broad-area lasers emitting between 910 and 980 nm

    NASA Astrophysics Data System (ADS)

    Zou, Yao; Zucker, Erik P.; Uppal, Kushant; Coblentz, Debbie L.; Liang, Pamela X.; Peters, Matthew G.; Craig, Richard R.

    2001-05-01

    High power InGaAs multi-mode broad area semiconductor lasers emitting between 190 nm and 980 nm are required as optical pumps for Er+ and Yb+ doped double clad fiber lasers and amplifiers. In this paper, we present performance and reliability of two generations of 100 micrometer aperture broad area devices emitting at 920 nm and 970 nm. The first generation devices have been deployed in the field with up to 2.5 W ex-facet optical power. More than 500,000 device-hrs of actual multi-cell lifetest data, and nearly 100 million accelerated device-hrs have been accumulated with 91FIT at 1.2W and 25 degrees Celsius or 1.9 million hrs MTBF at 2W and 25 degrees Celsius. A next-generation design further reduces thermal resistance, optical loss, and far-field divergence resulting in up to 4W ex-facet CW output power with superb reliability. Multi-mode fiber coupled modules demonstrate high coupling efficiency due to the reduced divergence angles of the new design. Lifetest of the new generation devices demonstrate the reliability of 167 FIT at 2W and 25 degrees Celsius or 499,000 hrs MTBF at 4W and 25 degrees Celsius.

  15. Quantum dots (QDs) restrain human cervical carcinoma HeLa cell proliferation through inhibition of the ROCK-c-Myc signaling.

    PubMed

    Chen, Liqun; Qu, Guangbo; Zhang, Changwen; Zhang, Shuping; He, Jiuyang; Sang, Nan; Liu, Sijin

    2013-03-01

    Cancers often cause significant morbidity and even death to patients. To date, conventional therapies, such as chemotherapy, radiation and surgery, are often limited; meanwhile, novel anticancer therapeutics are urgently needed to improve clinical treatments. Rapid application of nanotechnology and nanomaterials represents a promising vista for the development of anti-cancer therapeutics. However, how to integrate the novel properties of nanotechnology and nanomaterials into cancer treatment warrants close investigation. In the current study, we report a novel finding about the inhibitory effect of CdSe quantum dots (QDs) on Rho-associated kinase (ROCK) activity in cervical carcinoma HeLa cells associated with the attenuation of the ROCK-c-Myc signaling. We mechanistically demonstrated that QD-conducted ROCK inhibition greatly diminished c-Myc protein stability due to reduced phosphorylation, and also suppressed its activity in transcribing target genes (e.g. HSPC111). Thus, the treatment of QDs greatly restrained HeLa cell growth by inducing cell cycle arrest at G1 phase due to the reduced ability of c-Myc in driving cell proliferation. Additionally, since HSPC111, one of the c-Myc targets, is involved in regulating cell growth through ribosomal biogenesis and assembly, the downregulation of HSPC111 could also contribute to diminished proliferation in HeLa cells upon QD treatment. These results together suggested that inhibition of ROCK activity or ROCK-mediated c-Myc signaling in tumor cells upon QD treatment might represent a promising strategy to restrain tumor progression for human cervical carcinoma. PMID:23370637

  16. Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition.

    PubMed

    Lytvyn, P M; Mazur, Yu I; Marega, E; Dorogan, V G; Kladko, V P; Slobodian, M V; Strelchuk, V V; Hussein, M L; Ware, M E; Salamo, G J

    2008-12-17

    Lateral ordering of InGaAs quantum dots on the GaAs (001) surface has been achieved in earlier reports, resembling an anisotropic pattern. In this work, we present a method of breaking the anisotropy of ordered quantum dots (QDs) by changing the growth environment. We show experimentally that using As(2) molecules instead of As(4) as a background flux is efficient in controlling the diffusion of distant Ga adatoms to make it possible to produce isotropic ordering of InGaAs QDs over GaAs (001). The control of the lateral ordering of QDs under As(2) flux has enabled us to improve their optical properties. Our results are consistent with reported experimental and theoretical data for structure and diffusion on the GaAs surface. PMID:19942777

  17. Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method

    NASA Astrophysics Data System (ADS)

    Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya

    2015-12-01

    Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.

  18. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  19. Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Li, L. H.; Patriarche, G.; Linfield, E. H.; Khanna, S. P.; Davies, A. G.

    2010-11-01

    We investigate the effect of the arsenic source (As2 and As4) on the optical properties of InGaAs quantum rods (QRs) grown by molecular beam epitaxy. Owing to differences in the In and Ga diffusion lengths under As2 and As4 fluxes, photoluminescence (PL) peak energies of the QR samples depend strongly on the As source when similar growth conditions are used. A marked improvement in the PL intensities from QR samples grown using As4 is achieved. However, for both As2 and As4, an increase of the As overpressure results in a PL intensity degradation, probably due to the formation of nonradiative recombination centers.

  20. Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

    SciTech Connect

    Schmidbauer, M.; Seydmohamadi, Sh.; Wang, Zh.M.; Mazur, Yu.I.; Salamo, G.J.; Grigoriev, D.; Schaefer, P.; Koehler, R.; Hanke, M.

    2006-02-17

    Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long chains or chessboard two-dimensional arrays vertically organized with strict vertical ordering or vertical ordering that is inclined to the sample surface normal are accurately predicted and observed.

  1. Evaluation of InGaAs 640×512 detector array manufactured by Chunghwa Leading Photonics Tech

    NASA Astrophysics Data System (ADS)

    Nagayama, Takahiro; Takeuchi, Nami; Kokusho, Takuma; Yamanaka, Asa; Nishiyama, Miho; Kaneda, Hidehiro

    2014-07-01

    Focal Plane Arrays (FPA) are key items for modern astronomical observations in the near infrared wavelength, but it is very expensive and not easy to get them. Less expensive NIR FPAs with reasonable performance are very important to spread NIR observation extensively. FPA640×512 manufactured by Chunghwa Leading Photonics Tech is a 640×512 InGaAs detector covering the 0.9-1.7 μm wavelength. Since this array is significantly cheaper than the commonly used NIR FPAs in the astronomical observation, it is possible to be a good choice for particular projects which do not need many pixels, if FPA640×512 has acceptable performance for the purpose. We have evaluated one test grade array of FPA640×512 both in the room and low temperature environment. In order to evaluate the characteristics of this FPA in the low temperature environment, we cooled it down by the mechanical refrigerator and confirmed that it works at 100 K. We have found that the dark current reduces exponentially as the FPA temperature decreases, but it hits the bottom at~1000 e-/sec bellow 200 K with the default setting. We are trying to reduce the dark current by optimizing the bias voltage and the current to the MUX circuit. The latest experiments have shown the possibility that the dark current decreases to~200 e-/sec. This value is still higher than that of NIR FPAs used in the scientific observation, but it may be applicable for the particular purpose, for example, FPAs for slit viewer in spectrometers, wave front sensor, and so on.

  2. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

    PubMed Central

    Shen, Li-Fan; Yip, SenPo; Yang, Zai-xing; Fang, Ming; Hung, TakFu; Pun, Edwin Y.B.; Ho, Johnny C.

    2015-01-01

    Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interface traps between the nanowire channel and gate dielectric as well as the complicated device fabrication scheme. Here, we report the development of high-performance wrap-gated InGaAs NWFETs using conventional sputtered Al2O3 layers as gate dielectrics, instead of the typically employed atomic layer deposited counterparts. Importantly, the surface chemical passivation of NW channels performed right before the dielectric deposition is found to significantly alleviate plasma induced defect traps on the NW channel. Utilizing this passivation, the wrap-gated device exhibits superior electrical performances: a high ION/IOFF ratio of ~2 × 106, an extremely low sub-threshold slope of 80 mV/decade and a peak field-effect electron mobility of ~1600 cm2/(Vs) at VDS = 0.1 V at room temperature, in which these values are even better than the ones of state-of-the-art NWFETs reported so far. By combining sputtering and pre-deposition chemical passivation to achieve high-quality gate dielectrics for wrap-gated NWFETs, the superior gate coupling and electrical performances have been achieved, confirming the effectiveness of our hybrid approach for future advanced electronic devices. PMID:26607169

  3. Low-noise, fast frame-rate InGaAs 320 x 256 FPA for hyperspectral applications

    NASA Astrophysics Data System (ADS)

    Vermeiren, Jan; Van Bogget, Urbain; Van Horebeek, Guido; Bentell, Jonas; Verbeke, Peet; Colin, Thierry

    2009-05-01

    InGaAs is the material of preference for uncooled imaging in the [0.9-1.7 μm] SWIR range, as it can be manufactured on low cost InP substrates in a mainstream technology for optical telecommunications. By removing the substrate the spectral range can be extended to the [0.6 - 1.7 μm] range. In this way low cost, room temperature operated FPAs cameras for imaging and hyperspectral applications can be developed. The FPA is built around a low power CTIA stage with 3 S&H capacitors in the 20*20 um2 unit cell. This approach results in a synchronous shutter operation, which will support both ITR and IWR operation. In IWR mode the integration dead time is limited to max. 10 μsec. The CDS operation yields in a high sensitivity combined with a low noise: This presentation will focus on the development of a 20 μm pitch 320*256 device, with the following main characteristics: 20 μV/e-sensitivity and < 60 e-noise. The 4 low-power, differential outputs are enabling to drive an output load of > 30 pF at 40 Msamples/sec each, resulting in a > 1700 Hz frame rate, while at the same time the overall nominal power dissipation is < 200 mW. The ROIC is realized in a 0.35 um technology and the outputs are designed to drive directly a 3.3 V, 1.5 V VCM differential AD convertor. The circuit also supports a NDR operating mode to further reduce the noise of the FPA. A small from factor camera with Cameralink output is built around this FPA.

  4. Quantum dots encapsulated within phospholipid membranes: phase-dependent structure, photostability, and site-selective functionalization.

    PubMed

    Zheng, Weiwei; Liu, Yang; West, Ana; Schuler, Erin E; Yehl, Kevin; Dyer, R Brian; Kindt, James T; Salaita, Khalid

    2014-02-01

    Lipid vesicle encapsulation is an efficient approach to transfer quantum dots (QDs) into aqueous solutions, which is important for renewable energy applications and biological imaging. However, little is known about the molecular organization at the interface between a QD and lipid membrane. To address this issue, we investigated the properties of 3.0 nm CdSe QDs encapsulated within phospholipid membranes displaying a range of phase transition temperatures (Tm). Theoretical and experimental results indicate that the QD locally alters membrane structure, and in turn, the physical state (phase) of the membrane controls the optical and chemical properties of the QDs. Using photoluminescence, ICP-MS, optical microscopy, and ligand exchange studies, we found that the Tm of the membrane controls optical and chemical properties of lipid vesicle-embedded QDs. Importantly, QDs encapsulated within gel-phase membranes were ultrastable, providing the most photostable non-core/shell QDs in aqueous solution reported to date. Atomistic molecular dynamics simulations support these observations and indicate that membranes are locally disordered displaying greater disordered organization near the particle-solution interface. Using this asymmetry in membrane organization near the particle, we identify a new approach for site-selective modification of QDs by specifically functionalizing the QD surface facing the outer lipid leaflet to generate gold nanoparticle-QD assemblies programmed by Watson-Crick base-pairing. PMID:24417287

  5. A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Pokroy, Boaz; Ritter, Dan; Eizenberg, Moshe

    2016-02-01

    Thermal activated atomic layer deposited (t) (ALD) and plasma enhanced (p) ALD (PEALD) AlN films were investigated for gate applications of InGaAs based metal-insulator-semiconductor devices and compared to the well-known Al2O3 based system. The roles of post-metallization annealing (PMA) and the pre-deposition treatment (PDT) by either trimethylaluminium (TMA) or NH3 were studied. In contrast to the case of Al2O3, in the case of AlN, the annealing temperature reduced interface states density. In addition, improvement of the AlN film stoichiometry and a related border traps density reduction were observed following PMA. The lowest interface states density (among the investigated gate stacks) was found for PEALD AlN/InGaAs stacks after TMA PDT. At the same time, higher values of the dispersion in accumulation were observed for AlN/InGaAs gate stacks compared to those with Al2O3 dielectric. No indium out-diffusion and the related leakage current degradation due to annealing were observed at the AlN/InGaAs stack. In light of these findings, we conclude that AlN is a promising material for InGaAs based gate stack applications.

  6. Terahertz radiation using log-spiral-based low-temperature-grown InGaAs photoconductive antenna pumped by mode-locked Yb-doped fiber laser.

    PubMed

    Kong, Moon Sik; Kim, Ji Su; Han, Sang Pil; Kim, Namje; Moon, Kiwon; Park, Kyung Hyun; Jeon, Min Yong

    2016-04-01

    We demonstrate a terahertz (THz) radiation using log-spiral-based low-temperature-grown (LTG) InGaAs photoconductive antenna (PCA) modules and a passively mode-locked 1030 nm Yb-doped fiber laser. The passively mode-locked Yb-doped fiber laser is easily implemented with nonlinear polarization rotation in the normal dispersion using a 10-nm spectral filter. The laser generates over 250 mW of the average output power with positively chirped 1.58 ps pulses, which are dechirped to 127 fs pulses using a pulse compressor outside the laser cavity. In order to obtain THz radiation, a home-made emitter and receiver constructed from log-spiral-based LTG InGaAs PCA modules were used to generate and detect THz signals, respectively. We successfully achieved absorption lines over 1.5 THz for water vapor in free space. Therefore, we confirm that a mode-locked Yb-doped fiber laser has the potential to be used as an optical source to generate THZ waves. PMID:27136997

  7. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    NASA Astrophysics Data System (ADS)

    Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May

    2016-06-01

    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

  8. Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks

    NASA Astrophysics Data System (ADS)

    Palumbo, F.; Krylov, I.; Eizenberg, M.

    2015-03-01

    In this paper, the degradation characteristics of MOS (Metal-Oxide-Semiconductor) stacks with Al2O3/AlON or Al2O3 only as dielectric layers on InGaAs were studied. The dielectric nitrides are proposed as possible passivation layers to prevent InGaAs oxidation. At negative bias, it has been found out that the main contribution to the overall degradation of the gate oxide is dominated by the generation of positive charge in the gate oxide. This effect is pronounced in MOS stacks with Al2O3/AlON as dielectric, where we think the positive charge is mainly generated in the AlON interlayer. At positive bias, the degradation is dominated by buildup of negative charge due to electron trapping in pre-existing or stress-induced traps. For stress biases where the leakage currents are low, the changes in the electrical characteristics are dominated by electron-trapping into traps located in energy levels in the upper part of the semiconductor gap. For stress biases with higher leakage current levels, the electron trapping occurs in stress-induced traps increasing the shift of VFB towards positive bias. The overall results clearly show that the improvement of the high-k dielectric/InGaAs interface by introducing N into the Al-oxide does not necessarily mean an increase in the reliability of the MOS stack.

  9. High-optical-power handling InGaAs photodiodes and balanced receivers for high-spurious free dynamic range (SFDR) analog photonic links

    NASA Astrophysics Data System (ADS)

    Joshi, Abhay M.; Wang, Xinde; Mohr, Dan; Becker, Donald; Patil, Ravikiran

    2004-08-01

    We have developed 20 mA or higher photocurrent handling InGaAs photodiodes with 20 GHz bandwidth, and 10 mA or higher photocurrent handling InGaAs photodiodes with >40 GHz bandwidth. These photodiodes have been thoroughly tested for reliability including Bellcore GR 468 standard and are built to ISO 9001:2000 Quality Management System. These Dual-depletion InGaAs/InP photodiodes are surface illuminated and yet handle such large photocurrent due to advanced band-gap engineering. They have broad wavelength coverage from 800 nm to 1700 nm, and thus can be used at several wavelengths such as 850 nm, 1064 nm, 1310 nm, 1550 nm, and 1620 nm. Furthermore, they exhibit very low Polarization Dependence Loss of 0.05dB typical to 0.1dB maximum. Using above high current handling photodiodes, we have developed classical Push-Pull pair balanced photoreceivers for the 2 to 18 GHz EW system. These balanced photoreceivers boost the Spurious Free Dynamic Range (SFDR) by almost 3 dB by eliminating the laser RIN noise. Future research calls for designing an Avalanche Photodiode Balanced Pair to boost the SFDR even further by additional 3 dB. These devices are a key enabling technology in meeting the SFDR requirements for several DoD systems.

  10. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

    2015-12-01

    InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

  11. Billiard simulation and FFT analysis of AAS oscillations in nanofabricated InGaAs

    NASA Astrophysics Data System (ADS)

    Koga, Takaaki; Faniel, Sebastien; Mineshige, Shunsuke; Matsuura, Toru; Sekine, Yoshiaki

    2010-03-01

    Gate-voltage-dependent amplitude of magneto-conductance oscillation was analyzed using FFT method. The obtained FFT spectrum was compared with the areal dependence of the occurrence and spin interferece amplitude, calculated for Altshuler-Aronov-Spivak (AAS) type time-reversal pairs of the interference paths on all possible classical trajectroies that were obtained by extensive billiard simulations within the given structures. We have calcuated generic spin interference (SI) curves as a function of the Rashba parameter α, for various values of the Dresselhaus parameter b41^6c6c [eVå^3]. The comparison between theory and experiment suggested that the value of b41^6c6c should be considerably reduced from 27 eVå^3, the generally known value from the k.p theory.

  12. Ex post manipulation of barriers in InGaAs tunnel injection devices

    SciTech Connect

    Talalaev, Vadim G.; Cirlin, George E.; Novikov, Boris V.; Fuhrmann, Bodo; Werner, Peter; Tomm, Jens W.

    2015-01-05

    Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

  13. MT6415CA: a 640×512-15µm CTIA ROIC for SWIR InGaAs detector arrays

    NASA Astrophysics Data System (ADS)

    Eminoglu, Selim; Isikhan, Murat; Bayhan, Nusret; Gulden, M. Ali; Incedere, O. Samet; Soyer, S. Tuncer; Kocak, Serhat; Yilmaz, Gokhan S.; Akin, Tayfun

    2013-06-01

    This paper reports the development of a new low-noise CTIA ROIC (MT6415CA) suitable for SWIR InGaAs detector arrays for low-light imaging applications. MT6415CA is the second product in the MT6400 series ROICs from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic imaging sensors and ROICs for hybrid imaging sensors. MT6415CA is a low-noise snapshot CTIA ROIC, has a format of 640 × 512 and pixel pitch of 15 µm, and has been developed with the system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT6415CA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While-Read (IWR) modes. The CTIA type pixel input circuitry has three gain modes with programmable full-well-capacity (FWC) values of 10.000 e-, 20.000 e-, and 350.000 e- in the very high gain (VHG), high-gain (HG), and low-gain (LG) modes, respectively. MT6415CA has an input referred noise level of less than 5 e- in the very high gain (VHG) mode, suitable for very low-noise SWIR imaging applications. MT6415CA has 8 analog video outputs that can be programmed in 8, 4, or 2-output modes with a selectable analog reference for pseudo-differential operation. The ROIC runs at 10 MHz and supports frame rate values up to 200 fps in the 8-output mode. The integration time can be programmed up to 1s in steps of 0.1 µs. The ROIC uses 3.3 V and 1.8V supply voltages and dissipates less than 150 mW in the 4-output mode. MT6415CA is fabricated using a modern mixed-signal CMOS process on 200 mm CMOS wafers, and tested parts are available at wafer or die levels with test reports and wafer maps. A compact USB 3.0 camera and imaging software have been developed to demonstrate the imaging

  14. InGaAs axial-junction nanowire-array solar cells

    NASA Astrophysics Data System (ADS)

    Nakai, Eiji; Chen, Muyi; Yoshimura, Masatoshi; Tomioka, Katsuhiro; Fukui, Takashi

    2015-01-01

    Axial p-i-n junction nanowire (NW) solar cells (SCs) with a position-controlled GaAs-based NW array were fabricated by selective-area metal organic vapor phase epitaxy (SA-MOVPE). The measured electron-beam-induced current (EBIC) signals showed the formation of an axial p-i-n junction, which confirms power generation under sunlight illumination. The series resistance of the NW SCs is much higher than that of conventional planar SCs based on Si or other III-V compound semiconductors. The main difficulty concerning the fabrication of these NW SCs is the degradation of series resistance between the GaAs-based NWs and the indium-tin oxide (ITO) deposited as a transparent electrode. The series resistance of the fabricated GaAs-based NW SCs was reduced by introducing a tin doping contact layer between the ITO and the NW array, which is formed by pulse doping. As a result of this improved structure, the fabricated SCs exhibited an open-circuit voltage of 0.544 V, a short-circuit current of 18.2 mA/cm2, and a fill factor of 0.721 for an overall conversion efficiency of 7.14% under AM1.5G illumination. The series resistance of the SCs could be decreased to 0.132 Ω·cm2, which is one order of magnitude lower than that of the SC without a highly doped contact layer. This reduced series resistance indicates that nanostructure SCs with transparent electrodes and multijunction NW SCs with high efficiencies can be fabricated on a commercial basis in the near future.

  15. Degradation processes in high power multi-mode InGaAs strained quantum well lasers

    NASA Astrophysics Data System (ADS)

    Sin, Yongkun; Presser, Nathan; Foran, Brendan; Moss, Steven C.

    2009-02-01

    Recently, broad-area InGaAs-AlGaAs strained quantum well (QW) lasers have attracted much attention because of their unparalleled high optical output power characteristics that narrow stripe lasers or tapered lasers can not achieve. However, broad-area lasers suffer from poor beam quality and their high reliability operation has not been proven for communications applications. This paper concerns reliability and degradation aspects of broad-area lasers. Good facet passivation techniques along with optimized structural designs have led to successful demonstration of reliable 980nm single-mode lasers, and the dominant failure mode of both single-mode and broadarea lasers is catastrophic optical mirror damage (COMD), which limits maximum output powers and also determines operating output powers. Although broad-area lasers have shown characteristics unseen from singlemode lasers including filamentation, their effects on long-term reliability and degradation processes have not been fully investigated. Filamentation can lead to instantaneous increase in optical power density and thus temperature rise at localized areas through spatial-hole burning and thermal lensing which significantly reduces filament sizes under high power operation, enhancing the COMD process. We investigated degradation processes in commercial MOCVD-grown broad-area InGaAs-AlGaAs strained QW lasers at ~975nm with and without passivation layers by performing accelerated lifetests of these devices followed by failure mode analyses with various micro-analytical techniques. Since instantaneous fluctuations of filaments can lead to faster wear-out of passivation layer thus leading to facet degradation, both passivated and unpassivated broad-area lasers were studied that yielded catastrophic failures at the front facet and also in the bulk. Electron beam induced current technique was employed to study dark line defects (DLDs) generated in degraded lasers stressed under different test conditions and focused

  16. Performance of near-infrared InGaAs focal plane array with different series resistances to p-InP layer

    NASA Astrophysics Data System (ADS)

    Shao, Xiumei; Li, Xue; Li, Tao; Huang, Zhangcheng; Chen, Yu; Tang, Hengjing; Gong, Haimei

    2014-05-01

    A planar-type InGaAs linear detector was designed and fabricated based on n-i-n+ type InP/In0.53Ga0.47As/InP epitaxial materials. The major process of the detector contains planar diffusion, surface passivation, metal contact and annealing. The I-V curves and the relative spectral response were measured at room temperature. The relative spectral response is in the range of 0.9 μm to 1.68 μm. The R0A of the detector is about 2×106 Ω•cm2 and the dark current density is 5~10nA/cm2 at -10mV bias voltage. The linear detectors were wire-bonded with readout integrated circuits (ROIC) to form focal plane array (FPA). The input stage of the ROIC is based on capacitive-feedback transimpedance amplifier (CTIA) with a capacitor (Cint) to be 0.1pF. However, the FPA signals are oscillating especially when close to the saturation. The ohmic contact on p-InP region plays an important role in the performance of detectors and FPAs. In this case, the series resistance to p-InP layer of each pixel is up to 1×106Ω. The FPAs were simulated in case of InGaAs detectors with different series resistances. According to the simulation results, the bandwidth of CTIA is lowering along with Rs increasing, and the signals of the FPAs oscillate when the series resistances are beyond 4×104Ω. The reason for the unstable oscillation of FPA is due to the series resistance of the detector which is too high enough. Then, the annealing process of the detectors was improved and the series resistances were lower than 1×104Ω. The optimized InGaAs linear detectors were wire-bonded with the same ROIC. The oscillation of the signals disappears and the FPA shows good stability.

  17. A low-noise 15-μm pixel-pitch 640×512 hybrid InGaAs image sensor for night vision

    NASA Astrophysics Data System (ADS)

    Guellec, Fabrice; Dubois, Sébastien; de Borniol, Eric; Castelein, Pierre; Martin, Sébastien; Guiguet, Romain; Tchagaspanian, Micha"l.; Rouvié, Anne; Bois, Philippe

    2012-03-01

    Hybrid InGaAs focal plane arrays are very interesting for night vision because they can benefit from the nightglow emission in the Short Wave Infrared band. Through a collaboration between III-V Lab and CEA-Léti, a 640x512 InGaAs image sensor with 15μm pixel pitch has been developed. The good crystalline quality of the InGaAs detectors opens the door to low dark current (around 20nA/cm2 at room temperature and -0.1V bias) as required for low light level imaging. In addition, the InP substrate can be removed to extend the detection range towards the visible spectrum. A custom readout IC (ROIC) has been designed in a standard CMOS 0.18μm technology. The pixel circuit is based on a capacitive transimpedance amplifier (CTIA) with two selectable charge-to-voltage conversion gains. Relying on a thorough noise analysis, this input stage has been optimized to deliver low-noise performance in high-gain mode with a reasonable concession on dynamic range. The exposure time can be maximized up to the frame period thanks to a rolling shutter approach. The frame rate can be up to 120fps or 60fps if the Correlated Double Sampling (CDS) capability of the circuit is enabled. The first results show that the CDS is effective at removing the very low frequency noise present on the reference voltage in our test setup. In this way, the measured total dark noise is around 90 electrons in high-gain mode for 8.3ms exposure time. It is mainly dominated by the dark shot noise for a detector temperature settling around 30°C when not cooled. The readout noise measured with shorter exposure time is around 30 electrons for a dynamic range of 71dB in high-gain mode and 108 electrons for 79dB in low-gain mode.

  18. Electronic structure of cobalt doped CdSe quantum dots using soft X-ray spectroscopy

    SciTech Connect

    Joshua T. Wright; Su, Dong; van Buuren, Tony; Meulenberg, Robert W.

    2014-08-21

    The electronic structure and magnetic properties of cobalt doped CdSe quantum dots (QDs) are studied using electron microscopy, soft X-ray spectroscopy, and magnetometry. Magnetometry measurements suggest these QDs are superparamagnetic, contrary to a spin-glass state observed in the bulk analogue. Moreover, the electron microscopy shows well formed QDs, but with cobalt existing as doped into the QD and as unreacted species not contained in the QD. X-ray absorption measurements at the Co L3-edge suggest that changes in spectra features as a function of particle size can be described considering combination of a cobalt ion in a tetrahedral crystal field and an octahedrally coordinated (impurity) phase. With decreasing particle sizes, the impurity phase increases, suggesting that small QDs can be difficult to dope.

  19. Exciton fine-structure splitting in GaN/AlN quantum dots

    NASA Astrophysics Data System (ADS)

    Kindel, C.; Kako, S.; Kawano, T.; Oishi, H.; Arakawa, Y.; Hönig, G.; Winkelnkemper, M.; Schliwa, A.; Hoffmann, A.; Bimberg, D.

    2010-06-01

    Exciton bright-state fine-structure splitting (FSS) in single GaN/AlN quantum dots (QDs) is reported, presenting an important step toward the realization of room temperature single-qubit emitters for quantum cryptography and communication. The FSS in nitride QDs is up to 7 meV and thus much larger than for other QD systems. We find also a surprising dependence of FSS on the QD size, inverse to that of arsenide QDs. Now we are able to explain why FSS can only be observed in small QDs of high-emission energies. Our calculations reveal a shape/strain anisotropy as origin of the large FSS allowing different approaches to control FSS in nitrides.

  20. Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

    NASA Astrophysics Data System (ADS)

    Kuo, Meng-Wei

    Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly

  1. Control of electrochemical signals from quantum dots conjugated to organic materials by using DNA structure in an analog logic gate.

    PubMed

    Chen, Qi; Yoo, Si-Youl; Chung, Yong-Ho; Lee, Ji-Young; Min, Junhong; Choi, Jeong-Woo

    2016-10-01

    Various bio-logic gates have been studied intensively to overcome the rigidity of single-function silicon-based logic devices arising from combinations of various gates. Here, a simple control tool using electrochemical signals from quantum dots (QDs) was constructed using DNA and organic materials for multiple logic functions. The electrochemical redox current generated from QDs was controlled by the DNA structure. DNA structure, in turn, was dependent on the components (organic materials) and the input signal (pH). Independent electrochemical signals from two different logic units containing QDs were merged into a single analog-type logic gate, which was controlled by two inputs. We applied this electrochemical biodevice to a simple logic system and achieved various logic functions from the controlled pH input sets. This could be further improved by choosing QDs, ionic conditions, or DNA sequences. This research provides a feasible method for fabricating an artificial intelligence system. PMID:27116705

  2. Three-dimensional imaging for precise structural control of Si quantum dot networks for all-Si solar cells

    NASA Astrophysics Data System (ADS)

    Kourkoutis, Lena F.; Hao, Xiaojing; Huang, Shujuan; Puthen-Veettil, Binesh; Conibeer, Gavin; Green, Martin A.; Perez-Wurfl, Ivan

    2013-07-01

    All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to reduced inter-QD coupling in the layer. Efficient carrier transport via mini-bands is in this case more likely across the multilayers provided the SiO2 spacer layer is thin enough to allow coupling in the vertical direction.All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to

  3. Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence

    NASA Astrophysics Data System (ADS)

    Chen, J. F.; Wang, P. Y.; Wang, J. S.; Chen, N. C.; Guo, X. J.; Chen, Y. F.

    2000-02-01

    The onset of strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures is investigated. X-ray diffraction shows that when the InGaAs thickness increases beyond its critical thickness, another peak on the right shoulder of the GaAs peak appears, indicating that the top GaAs layer is being compressed in the growth direction by the relaxation of the InGaAs layer. Energy shifts of 44 and 49 meV are observed, respectively, from the strains of the InGaAs and GaAs top layers when increasing the InGaAs thickness from 300 and 1000 Å. These energy shifts are in agreement with theory calculated based on the relaxation process observed in x-ray diffraction, providing evidence that the relaxation occurs from near the bottom InGaAs/GaAs interface while the top interface still remains strained. This result is further corroborated by the images of cross-sectional transmission electron micrographs which show that most of the misfit dislocations are confined near the bottom interface.

  4. Characteristics of the dynamics of breakdown filaments in Al{sub 2}O{sub 3}/InGaAs stacks

    SciTech Connect

    Palumbo, F.; Shekhter, P.; Eizenberg, M.; Cohen Weinfeld, K.

    2015-09-21

    In this paper, the Al{sub 2}O{sub 3}/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.

  5. Near-infrared electroluminescence and photo detection in InGaAs p-i-n microdisks grown by selective area growth on silicon

    NASA Astrophysics Data System (ADS)

    Kjellman, Jon Øyvind; Sugiyama, Masakazu; Nakano, Yoshiaki

    2014-06-01

    Microselective-area growth of p-i-n InGaAs disks on (111) silicon by metalorganic chemical vapor deposition is a promising technology for III/V-on-Si integration. As a proof-of-concept, room-temperature electroluminescence is reported from ensembles of p-i-n InGaAs-on-Si micro-disks. The observed spectrum shows peak luminescence at 1.78 μm with a local maxima at 1.65 μm. The disks are also shown to generate a measurable photo current when illuminated by infrared light with less energy than the silicon bandgap energy. This makes these InGaAs-on-Si disks a promising technology for monolithic integration of light sources and detectors with silicon photonics and complementary metal-oxide-semiconductor electronics for optical communication, sensing, and imaging.

  6. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    SciTech Connect

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M.; Tang, K.; Ahn, J.; McIntyre, P. C.

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  7. A 20MHz 15μm pitch 128×128 CTIA ROIC for InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Huang, Zhangcheng; Chen, Yu; Huang, Songlei; Fang, Jiaxiong

    2014-11-01

    A 128×128 matrix readout integrated circuit (ROIC) for 15×15 μm2 InGaAs focal plane array (FPA) is reported in this paper. Capacitive-feedback Trans-Impedance Amplifier (CTIA) and correlated double sampling (CDS) are both involved in ROIC pixel which dissipates 90nW and has a full-well-capacity (FWC) of about 78,000 e-. Noises of ROIC pixel are analyzed and distribution method of capacitors in pixel is discussed in order to obtain low-noise performance. In column buffer circuit, a new pre-charging technique is developed to realize readout rate of 20 MHz with low power consumption. The ROIC is fabricated with 0.18-μm 3.3 V mixed signal CMOS process. Test results show that the ROIC has an equivalent input noise of about 181e- and can achieve a readout rate of 20 MHz.

  8. Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

    SciTech Connect

    Chidambaram, Thenappan; Madisetti, Shailesh; Greene, Andrew; Yakimov, Michael; Tokranov, Vadim; Oktyabrsky, Serge; Veksler, Dmitry; Hill, Richard

    2014-03-31

    In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm{sup 2}/Vs is observed at ∼1.4 × 10{sup 12} cm{sup −2}. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 × 10{sup 11} cm{sup −2}. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.

  9. Real-time continuous-wave terahertz line scanner based on a compact 1 × 240 InGaAs Schottky barrier diode array detector.

    PubMed

    Han, Sang-Pil; Ko, Hyunsung; Kim, Namje; Lee, Won-Hui; Moon, Kiwon; Lee, Il-Min; Lee, Eui Su; Lee, Dong Hun; Lee, Wangjoo; Han, Seong-Tae; Choi, Sung-Wook; Park, Kyung Hyun

    2014-11-17

    We demonstrate real-time continuous-wave terahertz (THz) line-scanned imaging based on a 1 × 240 InGaAs Schottky barrier diode (SBD) array detector with a scan velocity of 25 cm/s, a scan line length of 12 cm, and a pixel size of 0.5 × 0.5 mm². Foreign substances, such as a paper clip with a spatial resolution of approximately 1 mm that is hidden under a cracker, are clearly detected by this THz line-scanning system. The system consists of the SBD array detector, a 200-GHz gyrotron source, a conveyor system, and several optical components such as a high-density polyethylene cylindrical lens, metal cylindrical mirror, and THz wire-grid polarizer. Using the THz polarizer, the signal-to-noise ratio of the SBD array detector improves because the quality of the source beam is enhanced. PMID:25402136

  10. Comparison of the degradation characteristics of AlON/InGaAs and Al{sub 2}O{sub 3}/InGaAs stacks

    SciTech Connect

    Palumbo, F. Krylov, I.; Eizenberg, M.

    2015-03-14

    In this paper, the degradation characteristics of MOS (Metal-Oxide-Semiconductor) stacks with Al{sub 2}O{sub 3}/AlON or Al{sub 2}O{sub 3} only as dielectric layers on InGaAs were studied. The dielectric nitrides are proposed as possible passivation layers to prevent InGaAs oxidation. At negative bias, it has been found out that the main contribution to the overall degradation of the gate oxide is dominated by the generation of positive charge in the gate oxide. This effect is pronounced in MOS stacks with Al{sub 2}O{sub 3}/AlON as dielectric, where we think the positive charge is mainly generated in the AlON interlayer. At positive bias, the degradation is dominated by buildup of negative charge due to electron trapping in pre-existing or stress-induced traps. For stress biases where the leakage currents are low, the changes in the electrical characteristics are dominated by electron-trapping into traps located in energy levels in the upper part of the semiconductor gap. For stress biases with higher leakage current levels, the electron trapping occurs in stress-induced traps increasing the shift of V{sub FB} towards positive bias. The overall results clearly show that the improvement of the high-k dielectric/InGaAs interface by introducing N into the Al-oxide does not necessarily mean an increase in the reliability of the MOS stack.

  11. Characteristics and reliability of high power multi-mode InGaAs strained quantum well single emitters with CW output powers of over 5W

    NASA Astrophysics Data System (ADS)

    Sin, Yongkun; Presser, Nathan; Mason, Maribeth; Moss, Steven C.

    2006-02-01

    High-power multi-mode broad area InGaAs strained quantum well (QW) single emitters (λ ~ 920-980nm) have been mainly used for industrial applications. Recently, these broad area lasers with CW output powers >5W have also found applications in communications as pump lasers for Er-Yb co-doped fiber amplifiers. This application requires very demanding characteristics including higher reliability than industrial applications. In contrast to 980nm single mode InGaAs strained QW lasers that are widely employed in both terrestrial and submarine applications, the fact that multimode lasers have never been used in optical communications necessitates careful study of these lasers. We report investigations of performance characteristics, reliability, and failure modes of high-power multi-mode single emitters. The lasers studied were broad area strained InGaAs-GaAs single QW lasers grown either by MOCVD or MBE. Typical apertures were around 100μm wide and cavity lengths were <=4.2mm. AR-HR coated laser diode chips were mounted on carriers with junction down configuration to reduce thermal impedance. Laser thresholds were <=453mA at RT. At 6A injection current typical CW output powers were over 5W at 25°C with wall-plug efficiency of ~60%. Characteristics measured included thermal impedance and optical beam profiles that are critical in understanding performance and reliability. Automatic current control burn-in tests with different stress conditions were performed and log (I)-V characteristics were measured at RT to correlate degradation in optical output power and an increase in trap density estimated from the 2κ•T term in bulk recombination current. We also report initial analysis of lifetest results and failure modes from these lasers.

  12. A sensitive and selective sensing platform based on CdTe QDs in the presence of l-cysteine for detection of silver, mercury and copper ions in water and various drinks.

    PubMed

    Gong, Tingting; Liu, Junfeng; Liu, Xinxin; Liu, Jie; Xiang, Jinkun; Wu, Yiwei

    2016-12-15

    Water soluble CdTe quantum dots (QDs) have been prepared simply by one-pot method using potassium tellurite as stable tellurium source and thioglycolic acid (TGA) as stabilizer. The fluorescence of CdTe QDs can be improved 1.3-fold in the presence of l-cysteine (Cys), however, highly efficiently quenched in the presence of silver or mercury or copper ions. A sensitive and selective sensing platform for analysis of silver, mercury and copper ions has been simply established based on CdTe QDs in the presence of l-cysteine. Under the optimum conditions, excellent linear relationships exist between the quenching degree of the sensing platform and the concentrations of Ag(+), Hg(2+) and Cu(2+) ranging from 0.5 to 40ngmL(-1). By using masking agents of sodium diethyldithiocarbamate (DDTC) for Ag(+) and Cu(2+), NH4OH for Ag(+) and Hg(2+) and 1-(2-Pyridylazo)-2-naphthol (PAN) for Hg(2+) and Cu(2+), Hg(2+), Cu(2+) and Ag(+) can be exclusively detected in coexistence with other two ions, and the detection limits (3σ) were 0.65, 0.063 and 0.088ngmL(-1) for Ag(+), Hg(2+) and Cu(2+), respectively. This effective sensing platform has been used to detection of Ag(+), Hg(2+) and Cu(2+) in water and various drinks with satisfactory results. PMID:27451185

  13. Heterostructured Au NPs/CdS/LaBTC MOFs Photoanode for Efficient Photoelectrochemical Water Splitting: Stability Enhancement via CdSe QDs to 2D-CdS Nanosheets Transformation.

    PubMed

    Vaddipalli, Srinivasa Rao; Sanivarapu, Suresh Reddy; Vengatesan, Singaram; Lawrence, John Berchmans; Eashwar, Malayappan; Sreedhar, Gosipathala

    2016-09-01

    The electrochemical stability of MOFs in aqueous medium is most essential for MOFs based electrocatalysts for hydrogen production via water splitting. Since most MOFs suffer from instability issues in aqueous systems, there is enormous demand for electrochemically stable MOFs catalysts. Herein, we have developed a simple postsynthesis surface modification protocol for La (1,3,5-BTC) (H2O)6 metal-organic frameworks (LaBTC MOFs) using Mercaptopropionic acid (MPA), to attain electrochemical stability in aqueous mediums. The MPA treated LaBTC MOFs exhibited better stability than the bare LaBTC. Further, to facilitate light harvesting properties of LaBTC MOFs, Au nanoparticles (NPs) and CdSe quantum dots (QDs) are functionalized on LaBTC. The sensitization of LaBTC with Au NPs and CdSe QDs enhances the light harvesting properties of LaBTC in the visible region of solar spectrum. Using as a photoanode, the electrode generates the current density of ∼80 mA/cm(2) at 0.8 V (vs Ag/AgCl) during photoelectrochemical water splitting. The heterostructured LaBTC photoanode demonstrates the long-term stability for the period of 10 h. The electrode post-mortem analysis confirms the conversion of CdSe QDs into single crystalline 2D-CdS nanosheets. The present investigation reveals that CdS nanosheets together with SPR Au NPs improve the photoelectrochemical water splitting activity and stability of LaBTC MOFs. PMID:27532805

  14. Si quantum dot structures and their applications

    NASA Astrophysics Data System (ADS)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  15. Color-tunable emission of quantum dots via strong exciton-plasmon coupling in nanoporous gold structure at room temperature.

    PubMed

    Zhao, X; Chen, L; Chen, J; Shi, W; Liu, F

    2016-09-01

    We experimentally demonstrate the color-tunable emission of CdTe quantum dots (QDs) enabled by strongly coupling the QDs to the nanoporous gold (NPG) structure at room temperature. By manipulating the concentrations of the QDs or the excitation flux of the laser, the coupling strength between the excitons in QDs and the plasmons in NPG is controlled, resulting in a large Rabi splitting at the magnitude of hundreds of meV and a photoluminescence (PL) tuning distinguishable by the naked eye. In addition, such large PL tuning is enabled not only for the strong coupling occurring on resonance but also off resonance. We believe that our study offers a new approach towards designing and fabricating novel opto-electronic devices where dynamical and large spectral tuning of QD PL emission is desired. PMID:27607629

  16. Growth and Characterization of Telecommunication-Wavelength Quantum Dots Using Bi as a Surfactant

    NASA Astrophysics Data System (ADS)

    Okamoto, Hiroshi; Tawara, Takehiko; Gotoh, Hideki; Kamada, Hidehiko; Sogawa, Tetsuomi

    2010-06-01

    Telecommunication-wavelength quantum dots (QDs) were successfully grown by metalorganic vapor phase epitaxy using a novel growth method in which trimethylbismuth (TMBi) was supplied during the growth. Supplying TMBi during the growth was confirmed to have a surfactant effect, but did not result in the formation of a bismuth-containing alloy. Using this growth method, the photoluminescence intensity and wavelength of the QDs were much improved. It was found that the QD size was increased during the growth of the InGaAs covering layer; this effect partly resembled activated alloy phase separation reported for molecular-beam-epitaxy-grown QDs. For the realization of high density and multilayer QDs, we confirmed that a much higher V/III ratio than that of usual growth conditions and a strain-compensation structure are effective, respectively.

  17. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

    SciTech Connect

    Nadtochiy, A. M.; Mintairov, S. A.; Kalyuzhnyy, N. A.; Rouvimov, S. S.; Shernyakov, Yu. M.; Payusov, A. S.; Maximov, M. V.; Zhukov, A. E.

    2015-08-15

    Heterostructures with InGaAs quantum dots (QDs) are synthesized on vicinal GaAs (001) substrates. The photoluminescence (PL) spectra and threshold characteristics of edge-emitting QD lasers are studied in the temperature range 10-400 K. The structural properties of QDs are examined by transmission electron microscopy. Analysis of the PL spectra demonstrates the bimodality of the QD array, which leads to an unusual temperature behavior of the PL spectra and threshold current density. A model of the population of a bimodal QD array by carriers, describing the observed phenomena, is considered.

  18. Photoreflectance and photoluminescence study of InAs dots-in-a-well nanostructures

    SciTech Connect

    Nedzinskas, Ramūnas; Čechavičius, Bronislovas; Kavaliauskas, Julius; Karpus, Vytautas; Valušis, Gintaras; Li, Lianhe; Khanna, Suraj P.; Linfield, Edmund H.

    2013-12-04

    InAs quantum dots (QDs), embedded within InGaAs/GaAs/AlAs and GaAs/AlAs quantum wells (QWs), are examined by photoreflectance and photoluminescence techniques. Optical properties and electronic structure of two differently designed dots-in-a-well nanostructures is revealed focusing on the effect of strain-reducing InGaAs layer, which is discussed in detail. It is found that the use of InGaAs capping layer red-shifts the QD ground-state interband transition energy by about 100 meV maintaining strong quantization of the electronic states. The changes in InAs QD electronic properties are ascribed mainly to QD size/shape variation due to decomposition of InGaAs layer during growth process.

  19. Influence of the QD luminescence quantum yield on photocurrent in QD/graphene hybrid structures

    NASA Astrophysics Data System (ADS)

    Reznik, Ivan A.; Gromova, Yulia A.; Zlatov, Andrei S.; Baranov, Mikhail A.; Orlova, Anna O.; Moshkalev, Stanislav A.; Maslov, Vladimir G.; Baranov, Alexander V.; Fedorov, Anatoly V.

    2016-04-01

    Photoinduced changes in luminescent and photoelectrical properties of the hybrid structure based on CdSe/ZnS QDs and multilayer graphene nanobelts were studied. It was shown that an irradiation of the structures by 365 nm mercury line in doses up to 23 J led to growth of QD luminescent quantum yield and photocurrent in the QD/graphene structures. This confirms the proximity of the rates of the QD luminescence decay and energy/charge transfer from QDs to graphene, and opens an opportunity to photoinduced control of the photoelectric response of the graphene based hybrid structures with semiconductor quantum dots.

  20. Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

    SciTech Connect

    Cipro, R.; Gorbenko, V.; Baron, T. Martin, M.; Moeyaert, J.; David, S.; Bassani, F.; Bogumilowicz, Y.; Barnes, J. P.; Rochat, N.; Loup, V.; Vizioz, C.; Allouti, N.; Chauvin, N.; Bao, X. Y.; Ye, Z.; Pin, J. B.; Sanchez, E.

    2014-06-30

    Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO{sub 2} cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. The InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.

  1. Structural and Optical Behavior of Germanium Quantum Dots

    NASA Astrophysics Data System (ADS)

    Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; R. Dousti, M.; J. Amjad, R.

    2012-11-01

    Controlled growth, synthesis, and characterization of a high density and large-scale Ge nanostructure by an easy fabrication method are key issues for optoelectronic devices. Ge quantum dots (QDs) having a density of ~1011 cm-2 and a size as small as ~8 nm are grown by radio frequency magnetron sputtering on Si (100) substrates under different heat treatments. The annealing temperature dependent structural and optical properties are measured using AFM, XRD, FESEM, EDX, photoluminescence (PL) and Raman spectroscopy. The effect of annealing is found to coarsen the Ge QDs from pyramidal to dome-shaped structures as they grow larger and transform the nanoislands into relatively stable and steady state configurations. Consequently, the annealing allows the intermixing of Si into the Ge QDs and thereby reduces the strain energy that enhances the formation of larger nanoislands. The room temperature PL spectra exhibits two strong peaks at ~2.87 eV and ~3.21 eV attributed to the interaction between Ge, GeOx and the possibility of the presence of QDs core-shell structure. No reports so far exist on the red shift ~0.05 eV of the strongest PL peak that results from the effect of quantum confinement. Furthermore, the Raman spectra for the pre-annealed QDs that consist of three peaks at around ~305.25 cm-1, 409.19 cm-1 and 515.25 cm-1 are attributed to Ge-Ge, Ge-Si, and Si-Si vibration modes, respectively. The Ge-Ge optical phonon frequency shift (~3.27 cm-1) associated with the annealed samples is assigned to the variation of shape, size distribution, and Ge composition in different QDs. The variation in the annealing dependent surface roughness and the number density is found to be in the range of ~0.83 to ~2.24 nm and ~4.41 to ~2.14 × 1011 cm-2, respectively.

  2. Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators

    NASA Astrophysics Data System (ADS)

    Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

    2011-06-01

    We describe the factors that go into the component choices for a short wavelength IR (SWIR) imager, which include the SWIR sensor, the lens, and the illuminator. We have shown the factors for reducing dark current, and shown that we can achieve well below 1.5 nA/cm2 for 15 μm devices at 7 °C. In addition, we have mated our InGaAs detector arrays to 640×512 readout integrated integrated circuits to make focal plane arrays (FPAs). The resulting FPAs are capable of imaging photon fluxes with wavelengths between 1 and 1.6 μm at low light levels. The dark current associated with these FPAs is extremely low, exhibiting a mean dark current density of 0.26 nA/cm2 at 0 °C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling. In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide low-speckle illumination, and provide artifact-free imagery versus conventional laser illuminators.

  3. Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

    2016-05-01

    There exist discrepancies between reports on cross-hatch (CH) behaviour and its interaction with interfacial misfit dislocations in the literature. In this work, a thorough CH analysis has been presented by use of conventional and statistical analysis of AFM data. It has been shown that correlation between cross-hatch and misfit dislocation depends on the growth conditions and residual strain. Anisotropic relaxation and dislocations, composition and epitaxial tilt have been studied by HRXRD analysis. To illustrate these findings, molecular beam epitaxy (MBE) grown metamorphic InGaAs on GaAs (001) samples have been used. Reciprocal space mapping has been used to characterize the composition and relaxation while epilayer tilt and dislocation have been investigated by HRXRD rocking curve. A better understanding of CH pattern can enable us to minimize the surface roughness for metamorphic electronic devices and to fully utilize the quasi-periodic undulation in cross-hatch in applications, like ordered quantum dot growth. [Figure not available: see fulltext.

  4. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1991-01-01

    Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

  5. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1992-01-01

    Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

  6. Boron doped Si rich oxide/SiO2 and silicon rich nitride/SiNx bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Lin, Ziyun; Wu, Lingfeng; Jia, Xuguang; Zhang, Tian; Puthen-Veettil, Binesh; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-07-01

    Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO2 and Si/SiNx based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH3) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

  7. Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

    SciTech Connect

    Lin, Ziyun Wu, Lingfeng; Jia, Xuguang; Zhang, Tian; Puthen-Veettil, Binesh; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-07-28

    Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

  8. Resonance energy transfer in nano-bio hybrid structures can be modulated by UV laser irradiation

    NASA Astrophysics Data System (ADS)

    Krivenkov, V. A.; Solovyeva, D. O.; Samokhvalov, P. S.; Grinevich, R. S.; Brazhnik, K. I.; Kotkovskii, G. E.; Lukashev, E. P.; Chistyakov, A. A.

    2014-11-01

    A method for targeted variation of the radiation properties of quantum dots (QDs) to control the efficiency of resonance energy transfer in nanocrystal assemblies and nano-bio hybrid materials has been developed. The method is based on strong ultraviolet (UV) laser irradiation of QDs and allows the extinction and luminescence spectra to be controlled and the luminescence quantum yield and decay kinetics to be varied. Water-soluble QDs have been synthesized and used for analyzing the effect of energy transfer from semiconductor nanocrystals on the photocycle of the photosensitive protein bacteriorhodopsin (bR) in bR-QD complexes. The UV irradiation mode has been selected in a way permitting the modulation of QD optical parameters without modification of their structure or physico-chemical properties. It is concluded that the QD interaction with bR accelerates its photocycle, but this acceleration is determined by electrostatic interactions, rather than Förster resonance energy transfer from QDs to bR. The method of UV laser irradiation of fluorescent semiconductor QDs has proven to be an efficient technique for variation of nanocrystal optical properties without affecting their structure, as well as for fine modulation of the energy transfer processes in the nanocrystal assemblies and nano-bio hybrid materials.

  9. Impact of ex situ rapid thermal annealing on magneto-optical properties and oscillator strength of In(Ga)As quantum dots

    NASA Astrophysics Data System (ADS)

    Braun, T.; Betzold, S.; Lundt, N.; Kamp, M.; Höfling, S.; Schneider, C.

    2016-04-01

    We discuss the influence of a rapid thermal annealing step on the magneto-optical emission properties of In(Ga)As/GaAs quantum dots. We map out a strong influence of the growth and annealing parameters on the excitons' effective Landé g factors and in particular on their diamagnetic coefficients, which we directly correlate with the modification of the emitters' shape and material composition. In addition, we study the excitons' spontaneous emission lifetime as a function of the annealing temperature and the dot height and observe a strong increase of the emission rate with the quantum dot volume. The corresponding increase in oscillator strength yields fully consistent results with the analysis of the diamagnetic behavior. Specifically, we demonstrate that a rapid thermal annealing step of 850 ∘C can be employed to increase the oscillator strength of as-grown InAs/GaAs QDs by more than a factor of 2.

  10. Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures

    NASA Astrophysics Data System (ADS)

    Mishra, Puspashree; Ramesh, V.; Srinivasan, T.; Singh, S. N.; Goyal, Anshu; Sharma, R. K.; Muralidharan, R.

    2006-02-01

    We present a detailed study on the influence of several growth related factors such as indium segregation, spacer layer thickness and Si δ doping on the structural, optical and electrical properties of molecular beam epitaxy grown pseudomorphic high electron mobility transistor (P-HEMT) structures. Simulation of a high resolution x-ray diffraction (HRXRD) rocking curve was performed and compared with the experimental data to determine the quantum well (QW) thickness and composition as well as the indium segregation related changes in the QW composition. It is shown that growth of a thin layer (6 Å) of GaAs on top of the pseudomorphic InGaAs layer followed by 'flash-off' at a higher temperature could minimize the indium segregation related degradation of the hetero interface. Photoluminescence (PL) and surface photo voltage (SPV) peaks corresponding to the sub-band transitions are analysed using a self-consistent solution of Schrödinger and Poisson equations. PL results showed the dependence of the transition energies on the spacer layer thickness and the effectiveness of the carrier transfer into the InGaAs well. SPV spectra showed characteristic peaks from all the layers in the HEMT structures and were correlated with the data obtained from PL and HRXRD.

  11. Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots

    NASA Astrophysics Data System (ADS)

    Li, Z. C.; Liu, J. P.; Feng, M. X.; Zhou, K.; Zhang, S. M.; Wang, H.; Li, D. Y.; Zhang, L. Q.; Sun, Q.; Jiang, D. S.; Wang, H. B.; Yang, H.

    2013-09-01

    Self-organized InGaN quantum dots (QDs) with emission wavelength from green to red range have been grown on GaN templated c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of matrix layer composition on the structural and optical properties of InGaN QDs have been investigated. A continued growth of QDs is observed during the growth of In0.1Ga0.9N matrix layer, which results in an increase of the QDs' size. By using In0.1Ga0.9N matrix layer instead of GaN one, the annealing induced blue-shift in emission energy of the InGaN QDs can be suppressed. After the growth of top GaN cap layer, a larger red-shift caused by the quantum confined Stark effect is observed in the sample with In0.1Ga0.9N matrix layer. Employing this method, InGaN QD sample emitting at 615 nm with an internal quantum efficiency of 24.3% has been grown. The significance of this method is that it allows a higher growth temperature of InGaN QDs with emission wavelength in the green range to improve the crystalline quality, which is beneficial to enhance the efficiency of green InGaN QD light-emitting-diodes and laser diodes.

  12. Growth and properties of InGaAs/FeAl/InAlAs/InP heterostructures for buried reflector/interconnect applications in InGaAs thermophotovoltaic devices

    SciTech Connect

    Ringel, S.A.; Sacks, R.N.; Qin, L.; Clevenger, M.B.; Murray, C.S.

    1998-11-01

    Thermophotovoltaic cells consisting of InGaAs active layers are of extreme promise for high efficiency, low bandgap TPV conversion. In the monolithic interconnected module configuration, the presence of the InGaAs lateral conduction layer (LCL) necessary for the series connection between TPV cells results in undesirable free carrier absorption, causing a tradeoff between series resistance and optical absorption losses in the infrared. A potential alternative is to replace the LCL with an epitaxial metal layer that would provide a low-resistance interconnect while not suffering from free carrier absorption. The internal metal layer would also serve as an efficient, panchromatic back surface reflector, providing the additional advantage of increased effective optical thickness of the InGaAs cell. In this paper, the authors present the first results on the growth and development of buried epitaxial metal layers for TPV applications. High quality, single crystal, epitaxial Fe{sub x}Al{sub 1{minus}x} layers were grown on InAlAs/InP substrates, having compositions in the range x = 0.40--0.80. Epitaxial metal layers up to 1,000 {angstrom} in thickness were achieved, with excellent uniformity over large areas and atomically smooth surfaces. X-ray diffraction studies indicate that all FeAl layers are strained with respect to the substrate, for the entire composition range studied and for all thicknesses. The FeAl layers exhibit excellent resistance characteristics, with resistivities from 60 {micro}ohm-cm to 100 {micro}ohm-cm, indicating that interface scattering has a negligible effect on lateral conductivity. Reflectance measurements show that the FeAl thickness must be at least 1,000 {angstrom} to achieve > 90% reflection in the infrared.

  13. Quantifying Geometric Strain at the PbS QD-TiO₂ Anode Interface and Its Effect on Electronic Structures.

    PubMed

    Trejo, Orlando; Roelofs, Katherine E; Xu, Shicheng; Logar, Manca; Sarangi, Ritimukta; Nordlund, Dennis; Dadlani, Anup L; Kravec, Rob; Dasgupta, Neil P; Bent, Stacey F; Prinz, Fritz B

    2015-12-01

    Quantum dots (QDs) show promise as the absorber in nanostructured thin film solar cells, but achieving high device efficiencies requires surface treatments to minimize interfacial recombination. In this work, lead sulfide (PbS) QDs are grown on a mesoporous TiO2 film with a crystalline TiO2 surface, versus one coated with an amorphous TiO2 layer by atomic layer deposition (ALD). These mesoporous TiO2 films sensitized with PbS QDs are characterized by X-ray and electron diffraction, as well as X-ray absorption spectroscopy (XAS) in order to link XAS features with structural distortions in the PbS QDs. The XAS features are further analyzed with quantum simulations to probe the geometric and electronic structure of the PbS QD-TiO2 interface. We show that the anatase TiO2 surface structure induces PbS bond angle distortions, which increases the energy gap of the PbS QDs at the interface. PMID:26554814

  14. Investigation of the energy spectra and the electron-hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer

    NASA Astrophysics Data System (ADS)

    Gorshkov, Alexey P.; Volkova, Natalia S.; Istomin, Leonid A.; Zdoroveishev, Anton V.; Levichev, Sergey

    2016-08-01

    The effects of indium composition and the thickness of the combined InGaAs/GaAs thin cap layer on the energy spectra and relative electron-hole alignment of InAs quantum dots (QDs) grown by metal organic vapor phase epitaxy (MOVPE) are investigated by photoelectrical spectroscopy in a semiconductor/electrolyte system. In structures with InAs QDs and an InGaAs strain reducing layer, the shift of the hole's wave function to the QDs' top was revealed, which indicates In enrichment of the area near the top of QD'. In structures with an ultrathin GaAs cap layer a change of the sign of the built-in dipole moment was observed. This is explained by coupling effects of quantum-confined electrons with surface states.

  15. The influence of surface preparation on low temperature HfO{sub 2} ALD on InGaAs (001) and (110) surfaces

    SciTech Connect

    Kent, Tyler; Edmonds, Mary; Kummel, Andrew C.; Tang, Kechao; Negara, Muhammad Adi; McIntyre, Paul; Chobpattana, Varistha; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi

    2015-10-28

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C{sub max} hypothesized to be a result of poor nucleation of HfO{sub 2} on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D{sub it} high C{sub ox} MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

  16. Ultra-low noise large-area InGaAs quad photoreceiver with low crosstalk for laser interferometry space antenna

    NASA Astrophysics Data System (ADS)

    Joshi, Abhay; Datta, Shubhashish; Rue, Jim; Livas, Jeffrey; Silverberg, Robert; Guzman Cervantes, Felipe

    2012-07-01

    Quad photoreceivers, namely a 2 x 2 array of p-i-n photodiodes followed by a transimpedance amplifier (TIA) per diode, are required as the front-end photonic sensors in several applications relying on free-space propagation with position and direction sensing capability, such as long baseline interferometry, free-space optical communication, and biomedical imaging. It is desirable to increase the active area of quad photoreceivers (and photodiodes) to enhance the link gain, and therefore sensitivity, of the system. However, the resulting increase in the photodiode capacitance reduces the photoreceiver's bandwidth and adds to the excess system noise. As a result, the noise performance of the front-end quad photoreceiver has a direct impact on the sensitivity of the overall system. One such particularly challenging application is the space-based detection of gravitational waves by measuring distance at 1064 nm wavelength with ~ 10 pm/√Hz accuracy over a baseline of millions of kilometers. We present a 1 mm diameter quad photoreceiver having an equivalent input current noise density of < 1.7 pA/√Hz per quadrant in 2 MHz to 20 MHz frequency range. This performance is primarily enabled by a rad-hard-by-design dualdepletion region InGaAs quad photodiode having 2.5 pF capacitance per quadrant. Moreover, the quad photoreceiver demonstrates a crosstalk of < -45 dB between the neighboring quadrants, which ensures an uncorrected direction sensing resolution of < 50 nrad. The sources of this primarily capacitive crosstalk are presented.

  17. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

    NASA Astrophysics Data System (ADS)

    Kent, Tyler; Tang, Kechao; Chobpattana, Varistha; Negara, Muhammad Adi; Edmonds, Mary; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi; McIntyre, Paul; Kummel, Andrew C.

    2015-10-01

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher Cmax hypothesized to be a result of poor nucleation of HfO2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low Dit high Cox MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

  18. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces.

    PubMed

    Kent, Tyler; Tang, Kechao; Chobpattana, Varistha; Negara, Muhammad Adi; Edmonds, Mary; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi; McIntyre, Paul; Kummel, Andrew C

    2015-10-28

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C(max) hypothesized to be a result of poor nucleation of HfO2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D(it) high C(ox) MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared. PMID:26520547

  19. Radiation performance of AlGaAs concentrator cells and expected performance of cascade structures

    NASA Technical Reports Server (NTRS)

    Curtis, Henry B.; Swartz, Clifford K.; Hart, Russell E., Jr.

    1987-01-01

    Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1 MeV electrons and 37 MeV protons. These cells are candidates for individual cells in a cascade structure. Data is presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AMO. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series connected and separately connected structures are investigated.

  20. Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors

    NASA Astrophysics Data System (ADS)

    Du, B.; Gu, Y.; Zhang, Y. G.; Chen, X. Y.; Xi, S. P.; Ma, Y. J.; Ji, W. Y.; Shi, Y. H.; Li, X.; Gong, H. M.

    2016-04-01

    High In content In0.83Ga0.17As photodetector structures with a new kind of buffer scheme have been grown on InP substrate by gas source molecular beam epitaxy. The effects of buffer scheme on material properties and device performances have been investigated both experimentally and theoretically. The structures with the combination of step and continuously graded buffers show reduced surface roughness, improved photoluminescence intensity and lower device dark current than those with simplex continuously graded buffer at the same buffer thickness. The mechanisms have been discussed from X-ray diffraction, photoluminescence, dark current measurements and model analysis.

  1. A simple preparation of a stable CdS-polyacrylamide nanocomposite: structure, thermal and optical properties.

    PubMed

    Bach, Long Giang; Islam, M Rafiqul; Hong, Seong-Soo; Lim, Kwon Taek

    2013-11-01

    A facile approach was employed for the preparation of stable luminescent nanocomposites of CdS quantum dots (QDs) and polyacrylamide (PAM) through the cross coupling chemistry. Initially, CdS QDs were synthesized in a well controlled manner using 3-mercaptopropionic acid as a capping agent. Then, carboxylic acid groups on CdS QDs were chemically incorporated into PAM matrices with the assistance of 1-ethyl-3-(3-dimethylaminopropyl)-carbodiimide hydrochloride and N-hydroxysulfosuccinimide coupling agents. FT-IR analysis was used to investigate the chemical incorporation of CdS QDs in PAM matrices via the covalent protocol. The XPS elemental mapping studies further suggested the formation of CdS-PAM nanocomposites. FE-SEM and TEM images were engaged to study the morphologies, and distribution of CdS QDs in the PAM networks. The physical structure of the CdS-PAM nanocomposites was investigated by XRD analysis. Thermal stability of the nanocomposites was observed to be enhanced in compare to PAM as evidenced from TGA data. The UV-vis and photoluminescence studies of the CdS-PAM nanocomposites suggested their promising optical applications. PMID:24245319

  2. The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties

    NASA Astrophysics Data System (ADS)

    Zizeng, Lin; Mingmin, Cao; Shengkai, Wang; Qi, Li; Gongli, Xiao; Xi, Gao; Honggang, Liu; Haiou, Li

    2016-02-01

    The impact of nitridation and sulfur passivation for In0 53Ga0 47As surfaces on the Al/Al2O3/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ΔNbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with (NH4/2Sx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 × 1011 cm-2 eV-1. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031, 61464003), the Guangxi Natural Science Foundation (Nos. 2013GXNSFGA019003, 2013GXNSFAA019335), the Project (No. 9140C140101140C14069), the Innovation Project of GUET Graduate Education (No. YJCXS201529), and the National Science & Technology Major Project of China (No. 2011ZX02708-003).

  3. Observation of two-dimensional p-type dopant diffusion across a p{sup +}-InP/n{sup -}-InGaAs interface using scanning electron microscopy

    SciTech Connect

    Tsurumi, Daisuke; Hamada, Kotaro; Kawasaki, Yuji

    2013-04-14

    Scanning electron microscopy (SEM) with potential calculations has been shown to be effective for the detection of p-type dopant diffusion, even across a Zn doped p{sup +}-InP/non-doped n{sup -}-InGaAs/n{sup +}-InP heterojunction. Heterojunction samples were observed using SEM and the electrostatic potential was calculated from Zn concentration profiles obtained by secondary ion mass spectrometry. The sensitivity of SEM for the potential was derived from the SEM observations and potential calculation results. The results were then used to investigate the dependence of the SEM contrast on the Zn diffusion length across the p{sup +}-InP/non-doped n{sup -}-InGaAs interface. Accurate dopant mapping was difficult when the Zn diffusion length was shorter than 30 nm, because the heterojunction affects the potential at the interface. However, accurate dopant mapping was possible when the Zn diffusion length was longer than 30 nm, because the factor dominating the potential variation was not the heterojunction, but rather Zn diffusion 30 nm distant from the interface. Thus, Zn diffusion further than 30 nm from a Zn-doped p{sup +}-InP/non-doped n{sup -}-InGaAs interface can be effectively detected by secondary electron (SE) imaging. SE imaging with potential calculations can be widely used for accurate dopant mapping, even at heterojunctions, and is, therefore, expected to be of significant assistance to the compound semiconductor industry.

  4. Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J.; Shul, R.J.

    1998-12-17

    The effects of the additive noble gases He, Ar and Xe on chlorine-based Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs were studied as a function of source power, chuck power and discharge composition. The etch rates of all materials with C12/He and C12/Xe are greater than with C12/Ar. Etch rates in excess of 4.8 pndmin for InP and InSb with C12/He or C12/Xe, 0.9 pndmin for InGaP with C12/Xe, and 3.8 prdmin for InGaAs with Clz/Xe were obtained at 750 W ICP power, 250 W rf power, - 1570 C12 and 5 mTorr. All three plasma chemistries produced smooth morphologies for the etched InGaP surfaces, while the etched surface of InP showed rough morphology under all conditions.

  5. Probing structure-induced optical behavior in a new class of self-activated luminescent 0D/1D CaWO₄ metal oxide – CdSe nanocrystal composite heterostructures

    SciTech Connect

    Han, Jinkyu; McBean, Coray; Wang, Lei; Hoy, Jessica; Jaye, Cherno; Liu, Haiqing; Li, Zhuo-Qun; Sfeir, Matthew Y.; Fischer, Daniel A.; Taylor, Gordon T.; Misewich, James A.; Wong, Stanislaus S.

    2015-01-30

    In this report, we synthesize and characterize the structural and optical properties of novel heterostructures composed of (i) semiconducting nanocrystalline CdSe quantum dot (QDs) coupled with (ii) both one and zero-dimensional (1D and 0D) motifs of self-activated luminescence CaWO₄ metal oxides. Specifically, ~4 nm CdSe QDs have been anchored onto (i) high-aspect ratio 1D nanowires, measuring ~230 nm in diameter and ~3 μm in length, as well as onto (ii) crystalline 0D nanoparticles (possessing an average diameter of ~ 80 nm) of CaWO₄ through the mediation of 3-mercaptopropionic acid (MPA) as a connecting linker. Composite formation was confirmed by complementary electron microscopy and spectroscopy (i.e. IR and Raman) data. In terms of luminescent properties, our results show that our 1D and 0D heterostructures evince photoluminescence (PL) quenching and shortened PL lifetimes of CaWO₄ as compared with unbound CaWO₄. We propose that a photo-induced electron transfer process occurs from CaWO₄ to CdSe QDs, a scenario which has been confirmed by NEXAFS measurements and which highlights a decrease in the number of unoccupied orbitals in the conduction bands of CdSe QDs. By contrast, the PL signature and lifetimes of MPA-capped CdSe QDs within these heterostructures do not exhibit noticeable changes as compared with unbound MPA-capped CdSe QDs. The striking difference in optical behavior between CaWO₄ nanostructures and CdSe QDs within our heterostructures can be correlated with the relative positions of their conduction and valence energy band levels. In addition, the PL quenching behaviors for CaWO₄ within the heterostructure configuration were examined by systematically varying (i) the quantities and coverage densities of CdSe QDs as well as (ii) the intrinsic morphology (and by extension, the inherent crystallite size) of CaWO₄ itself.

  6. Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots.

    PubMed

    Wang, Peng; Pan, Wenwu; Wu, Xiaoyan; Liu, Juanjuan; Cao, Chunfang; Wang, Shumin; Gong, Qian

    2016-12-01

    InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface. PMID:27255900

  7. Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Pan, Wenwu; Wu, Xiaoyan; Liu, Juanjuan; Cao, Chunfang; Wang, Shumin; Gong, Qian

    2016-06-01

    InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.

  8. Spin Seebeck effect in an (In,Ga)As quantum well with equal Rashba and Dresselhaus spin-orbit couplings

    NASA Astrophysics Data System (ADS)

    Capps, Jeremy; Marinescu, D. C.; Manolescu, Andrei

    2016-02-01

    We demonstrate that a spin-dependent Seebeck effect can be detected in quantum wells with zinc-blend structure with equal Rashba-Dresselhaus spin-orbit couplings. This theory is based on the establishment of an itinerant antiferromagnetic state, a low total-energy configuration realized in the presence of the Coulomb interaction enabled by the k =0 degeneracy of the opposite-spin single-particle energy spectra. Transport in this state is modeled by using the solutions of a Boltzmann equation obtained within the relaxation time approximation. Numerical estimates performed for realistic GaAs samples indicate that at low temperatures, the amplitude of the spin Seebeck coefficient can be increased by scattering on magnetic impurities.

  9. TEM study of dislocations structure in In0.82Ga0.18As/InP heterostructure with InGaAs as buffer layer

    NASA Astrophysics Data System (ADS)

    Zhao, Liang; Guo, Zuo-xing; Yuan, De-zeng; Wei, Qiu-lin; Zhao, Lei

    2016-05-01

    In order to improve the quality of detector, In x Ga1- x As ( x=0.82) buffer layer has been introduced in In0.82Ga0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The dislocations are effectively suppressed in In x Ga1- x As ( x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation (MD). The threading dislocations (TDs) are directly related to the multiplication of the MDs in buffer layer.

  10. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  11. Self-organized tubular structures as platforms for quantum dots.

    PubMed

    Makki, Rabih; Ji, Xin; Mattoussi, Hedi; Steinbock, Oliver

    2014-04-30

    The combination of top-down and bottom-up approaches offers great opportunities for the production of complex materials and devices. We demonstrate this approach by incorporating luminescent CdSe-ZnS nanoparticles into macroscopic tube structures that form as the result of externally controlled self-organization. The 1-2 mm wide hollow tubes consist of silica-supported zinc oxide/hydroxide and are formed by controlled injection of aqueous zinc sulfate into a sodium silicate solution. The primary growth region at the top of the tube is pinned to a robotic arm that moves upward at constant speed. Dispersed within the injected zinc solution are 3.4 nm CdSe-ZnS quantum dots (QDs) capped by DHLA-PEG-OCH3 ligands. Fluorescence measurements of the washed and dried tubes reveal the presence of trapped QDs at an estimated number density of 10(10) QDs per millimeter of tube length. The successful inclusion of the nanoparticles is further supported by electron microscopy and energy dispersive X-ray spectroscopy, with the latter suggesting a nearly homogeneous QD distribution across the tube wall. Exposure of the samples to copper sulfate solution induces quenching of about 90% of the tubes' fluorescence intensity. This quenching shows that the large majority of the QDs is chemically accessible within the microporous, about 15-μm-wide tube wall. We suggest possible applications of such QD-hosting tube systems as convenient sensors in microfluidic and related applications. PMID:24702437

  12. Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications

    NASA Astrophysics Data System (ADS)

    Mintairov, S. A.; Kalyuzhnyy, N. A.; Lantratov, V. M.; Maximov, M. V.; Nadtochiy, A. M.; Rouvimov, Sergei; Zhukov, A. E.

    2015-09-01

    Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm-2 for the terrestrial spectrum and by 4.1 mA cm-2 for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm-1 and 37 A cm-2 per layer, respectively.

  13. Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

    PubMed

    Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E

    2015-09-25

    Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively. PMID:26328920

  14. The dispersion in accumulation at InGaAs-based metal/oxide/semiconductor gate stacks with a bi-layered dielectric structure

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-08-01

    InGaAs gate stacks comprising the moderate dielectric constant (k) Al2O3 have a significantly lower dispersion in accumulation in comparison to stacks with the high-k HfO2 of the same physical thickness. As a result, a HfO2/Al2O3 bi-layer structure seems attractive in terms of both high effective dielectric constant and low dispersion in accumulation. The influence of Al2O3 thickness on the dispersion was investigated in metal/HfO2/Al2O3/InGaAs gate stacks with a fixed overall dielectric thickness. An effective suppression of the dispersion with the increase of the Al2O3 thickness was observed. However, the Al2O3 thickness required for passivation of the dispersion in accumulation was significantly higher in comparison to both the border traps related tunneling distance in Al2O3 and the minimal thickness required for the Al2O3/InGaAs band offset stabilization. The phenomenon can be explained by the lower dielectric constant of Al2O3 film (compared to the subsequently deposited HfO2 layer), where Al2O3 dielectric constant dependence on the film thickness enhances the dispersion intensity. As a result, the guidelines for the passivation layer engineering are: maximization of both majority carriers band offsets and of the dielectric constant of the passivation layer.

  15. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Wang, R. F.; Zhang, J.; Li, H. S.; Zhang, J.; Qiu, F.; Yang, J.; Wang, C.; Yang, Y.

    2016-07-01

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer–Weber mode instead of the Stranski–Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  16. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    PubMed

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure. PMID:27302495

  17. Aggregation of quantum dots in hybrid structures based on TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Kolesova, Ekaterina P.; Orlova, Anna O.; Maslov, Vladimir G.; Gun'ko, Yurii K.; Cleary, Olan; Baranov, Aleksander V.; Fedorov, Anatoly V.

    2016-04-01

    A morphology and photoinduced changes of luminescence properties of two types of hybrid structures based on TiO2 nanoparticles and CdSe/ZnS QDs were examined. A spin-coating method and a modified Langmuir- Blodgett technique have been applied to form the multilayer hybrid structures on glass slides. It was demonstrated that uniformity of QD surface concentration in hybrid structures depends on the method of structure formation. A photodegradation of luminescence properties of the structures is associated with the formation of QD aggregates. The QD aggregate concentration and their size depend on the method of the structure formation and the concentration of TiO2 nanoparticles. A decay of luminescence of QD aggregates in hybrid structures contains a microsecond components. An exposure of the hybrid structures with uniform QD surface concentration by visible light resulted in a photopassivation of their surface, which is accompanied by significant increase of luminescence quantum yield of QDs.

  18. Quantum dots based mesoporous structured imprinting microspheres for the sensitive fluorescent detection of phycocyanin.

    PubMed

    Zhang, Zhong; Li, Jinhua; Wang, Xiaoyan; Shen, Dazhong; Chen, Lingxin

    2015-05-01

    Phycocyanin with important physiological/environmental significance has attracted increasing attention; versatile molecularly imprinted polymers (MIPs) have been applied to diverse species, but protein imprinting is still quite difficult. Herein, using phycocyanin as template via a sol-gel process, we developed a novel fluorescent probe for specific recognition and sensitive detection of phycocyanin by quantum dots (QDs) based mesoporous structured imprinting microspheres (SiO2@QDs@ms-MIPs), obeying electron-transfer-induced fluorescence quenching mechanism. When phycocyanin was present, a Meisenheimer complex would be produced between phycocyanin and primary amino groups of QDs surface, and then the photoluminescent energy of QDs would be transferred to the complex, leading to the fluorescence quenching of QDs. As a result, the fluorescent intensity of the SiO2@QDs@ms-MIPs was significantly decreased within 8 min, and accordingly a favorable linearity within 0.02-0.8 μM and a high detectability of 5.9 nM were presented. Excellent recognition specificity for phycocyanin over its analogues was displayed, with a high imprinting factor of 4.72. Furthermore, the validated probe strategy was successfully applied to seawater and lake water sample analysis, and high recoveries in the range of 94.0-105.0% were attained at three spiking levels of phycocyanin, with precisions below 5.3%. The study provided promising perspectives to develop fluorescent probes for convenient, rapid recognition and sensitive detection of trace proteins from complex matrices, and further pushed forward protein imprinting research. PMID:25875154

  19. Anisotropic Transport of Electrons in a Novel FET Channel with Chains of InGaAs Nano-Islands Embedded along Quasi-Periodic Multi-Atomic Steps on Vicinal (111)B GaAs

    SciTech Connect

    Akiyama, Y.; Kawazu, T.; Noda, T.; Sakaki, H.

    2010-01-04

    We have studied electron transport in n-AlGaAs/GaAs heterojunction FET channels, in which chains of InGaAs nano-islands are embedded along quasi-periodic steps. By using two samples, conductance G{sub para}(V{sub g}) parallel to the steps and G{sub perp}(V{sub g}) perpendicular to them were measured at 80 K as functions of gate voltage V{sub g}. At sufficiently high V{sub g}, G{sub para} at 80 K is several times as high as G{sub perp}, which manifests the anisotropic two-dimensional transport of electrons. When V{sub g} is reduced to -0.7 V, G{sub perp} almost vanishes, while {sub Gpara} stays sizable unless V{sub g} is set below -0.8 V. These results indicate that 'inter-chain' barriers play stronger roles than 'intra-chain' barriers.

  20. Size-confined fixed-composition and composition-dependent engineered band gap alloying induces different internal structures in L-cysteine-capped alloyed quaternary CdZnTeS quantum dots.

    PubMed

    Adegoke, Oluwasesan; Park, Enoch Y

    2016-01-01

    The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27-61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72-93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying. PMID:27250067

  1. Size-confined fixed-composition and composition-dependent engineered band gap alloying induces different internal structures in L-cysteine-capped alloyed quaternary CdZnTeS quantum dots

    NASA Astrophysics Data System (ADS)

    Adegoke, Oluwasesan; Park, Enoch Y.

    2016-06-01

    The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27–61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72–93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying.

  2. Size-confined fixed-composition and composition-dependent engineered band gap alloying induces different internal structures in L-cysteine-capped alloyed quaternary CdZnTeS quantum dots

    PubMed Central

    Adegoke, Oluwasesan; Park, Enoch Y.

    2016-01-01

    The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27–61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72–93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying. PMID:27250067

  3. Nitride facet passivation raises reliability, COMD, and enables high-temperature operation of InGaAsP, InGaAs, and InAlGaAs lasers

    NASA Astrophysics Data System (ADS)

    Silfvenius, Christofer; Sun, Yanting; Blixt, Peter; Lindstroem, Carsten; Feitisch, Alfred O.

    2005-03-01

    The laser diode technology, underpinning applications such as data storage, industrial lasers and optical telecommunications, still suffers from reliability and longevity limitations, especially in high power applications. A main problem for these lasers arises from facet oxidation, leading to increased absorption, power degradation and COMD device failure. Typically, high power devices initially show a low linear degradation and after some 100 hours, the degradation accelerates in a nonlinear fashion, indicating a degradation runaway condition. This article reports performance and reliability improvements that are based on a process which atomically seals surfaces and eliminates oxidation by forming stable nitrides on laser facets. The dangling bond terminating technology suppresses accelerated degradation associated with optical density and heat at laser facets. The dangling bond termination is demonstrated by improved COMD, decreased degradation at CW operation and a constant linear degradation rate at different QW temperature conditions (nonlinear degradation indicates advancement in the oxidation/optical absorption/facet heating/oxidation spiral). The technology is applicable to a range of material systems and has previously been demonstrated on InAlGaAs and InGaAs (increased COMD to >270 and 470mW/μm respectively). The devices with the typically lowest COMD levels (AlInGaAs) show a remarkably low linear degradation rate of <0.5%/kh during at CW life test operation at 90°C and a power level corresponding to 80W bar power. In addition to long term AlInGaAs laser life test results, this paper presents results on nitride facet passivation applied to 805nm InGaAsP devices, showing improved COMD to 400mW/μm and the initial CW life data confirms the general behavior of the previously life-tested InGaAs and InAlGaAs based devices.

  4. Structuralism.

    ERIC Educational Resources Information Center

    Piaget, Jean

    Provided is an overview of the analytical method known as structuralism. The first chapter discusses the three key components of the concept of a structure: the view of a system as a whole instead of so many parts; the study of the transformations in the system; and the fact that these transformations never lead beyond the system but always…

  5. Synthesis, Structural and Optical Characterization of CdTeSe/ZnSe and CdTeSe/ZnTe Core/Shell Ternary Quantum Dots for Potential Application in Solar Cells

    NASA Astrophysics Data System (ADS)

    Hung, Le Xuan; Thang, Pham Nam; Van Nong, Hoang; Yen, Nguyen Hai; Chinh, Vu Đuc; Van Vu, Le; Hien, Nguyen Thi Thuc; de Marcillac, Willy Daney; Hong, Phan Ngoc; Loan, Nguyen Thu; Schwob, Catherine; Maître, Agnès; Liem, Nguyen Quang; Bénalloul, Paul; Coolen, Laurent; Nga, Pham Thu

    2016-08-01

    This work presents the results on the fabrication, structural and optical properties of CdTeSe/ZnTe and CdTeSe/ZnSe n monolayers (ML) (with n = 0,1,2,4 and 6 being the nominal shell monolayer thickness) ternary alloyed core/shell quantum dots (QDs). Transmission electron microscopy has been used to observe the shape and size of the QDs. These QDs crystallize at the zinc-blende phase. Raman scattering has been used to characterize the CdTeSe QDs' alloy composition in the fabrication and coating processes. The Raman spectrum of CdTeSe QDs, in the frequency range from 100 cm-1 to 300 cm-1, is a composite band with two peaks at 160 cm-1 and 192 cm-1. When the thickness of the ZnTe shell is 4 ML, the peak of the Raman spectrum only appears at 160 cm-1. For the ZnSe 4 ML shell, the peak only appears at ˜200 cm-1. This shows that the nature of the CdTeSe QDs is either CdTe-rich or CdSe-rich depending on the shell of each sample. The shell thickness of 2 ML does not change the ternary core QDs' crystalline phase. The absorption and photoluminescence spectra show that the absorption and emission bands can be shifted to 900 nm, depending on each ternary alloyed QD core/shell sample. This near-infrared spectrum region is suitable for applications in solar cells.

  6. Synthesis, Structural and Optical Characterization of CdTeSe/ZnSe and CdTeSe/ZnTe Core/Shell Ternary Quantum Dots for Potential Application in Solar Cells

    NASA Astrophysics Data System (ADS)

    Hung, Le Xuan; Thang, Pham Nam; Van Nong, Hoang; Yen, Nguyen Hai; Chinh, Vu Đuc; Van Vu, Le; Hien, Nguyen Thi Thuc; de Marcillac, Willy Daney; Hong, Phan Ngoc; Loan, Nguyen Thu; Schwob, Catherine; Maître, Agnès; Liem, Nguyen Quang; Bénalloul, Paul; Coolen, Laurent; Nga, Pham Thu

    2016-05-01

    This work presents the results on the fabrication, structural and optical properties of CdTeSe/ZnTe and CdTeSe/ZnSe n monolayers (ML) (with n = 0,1,2,4 and 6 being the nominal shell monolayer thickness) ternary alloyed core/shell quantum dots (QDs). Transmission electron microscopy has been used to observe the shape and size of the QDs. These QDs crystallize at the zinc-blende phase. Raman scattering has been used to characterize the CdTeSe QDs' alloy composition in the fabrication and coating processes. The Raman spectrum of CdTeSe QDs, in the frequency range from 100 cm-1 to 300 cm-1, is a composite band with two peaks at 160 cm-1 and 192 cm-1. When the thickness of the ZnTe shell is 4 ML, the peak of the Raman spectrum only appears at 160 cm-1. For the ZnSe 4 ML shell, the peak only appears at ˜200 cm-1. This shows that the nature of the CdTeSe QDs is either CdTe-rich or CdSe-rich depending on the shell of each sample. The shell thickness of 2 ML does not change the ternary core QDs' crystalline phase. The absorption and photoluminescence spectra show that the absorption and emission bands can be shifted to 900 nm, depending on each ternary alloyed QD core/shell sample. This near-infrared spectrum region is suitable␣for applications in solar cells.

  7. Spectral Barcoding of Quantum Dots: Deciphering Structural Motifs from the Excitonic Spectra

    SciTech Connect

    Mlinar, V.; Zunger, A.

    2009-01-01

    Self-assembled semiconductor quantum dots (QDs) show in high-resolution single-dot spectra a multitude of sharp lines, resembling a barcode, due to various neutral and charged exciton complexes. Here we propose the 'spectral barcoding' method that deciphers structural motifs of dots by using such barcode as input to an artificial-intelligence learning system. Thus, we invert the common practice of deducing spectra from structure by deducing structure from spectra. This approach (i) lays the foundation for building a much needed structure-spectra understanding for large nanostructures and (ii) can guide future design of desired optical features of QDs by controlling during growth only those structural motifs that decide given optical features.

  8. The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

    SciTech Connect

    Moldavskaya, L. D. Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

    2008-01-15

    A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 {mu}m at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 Multiplication-Sign 10{sup 9} cm Hz{sup 1/2}W{sup -1}.

  9. The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

    SciTech Connect

    Moldavskaya, L. D. Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

    2008-01-15

    A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 {mu}m at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 x 10{sup 9} cm Hz{sup 1/2}W{sup -1}.

  10. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  11. Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures

    SciTech Connect

    Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C.

    2007-09-01

    Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n{sup +}-GaAs substrates, capped between 0.4 {mu}m thick n-type GaAs layers with electron concentration of 1x10{sup 16} cm{sup -3}. The effect of rapid thermal annealing at 700 deg. C for 60 s on the noise properties of the structure has been investigated using Au/n-GaAs Schottky diodes as test devices. In the reference sample without containing QDs, the noise spectra show a generation-recombination (g-r) noise behavior due to a discrete energy level located about 0.51 eV below the conduction band edge. This trap is ascribed to the M4 (or EL3) trap in GaAs MBE layers, related to a chemical impurity-native defect complex. In the structure with embedded QDs, the observed g-r noise spectra are due to a midgap trap level ascribed to the EL2 trap in GaAs, which is related to the InAs QDs dissolution due to the thermal treatment.

  12. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

    PubMed Central

    2014-01-01

    Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%. PACS 81.07.Ta; 78.67.Pt; 88.40.jj PMID:25489285

  13. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

    NASA Astrophysics Data System (ADS)

    Cao, Yunqing; Lu, Peng; Zhang, Xiaowei; Xu, Jun; Xu, Ling; Chen, Kunji

    2014-11-01

    Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%.

  14. Impact of heterogeneous passivation of trimethylphosphine oxide and di-methylphosphine oxide surface ligands on the electronic structure of CdnSen (n=6, 15) quantum dots: A DFT study

    NASA Astrophysics Data System (ADS)

    Ganesan, Paramasivam; Lakshmipathi, Senthilkumar

    2016-09-01

    We report the significant influence of multiple capping ligands such as tri-methylphosphine oxide (TMPO) and di-methylphosphine oxide (DMPO) on the surface morphology and electronic structure of CdnSen (n=6, 15) quantum dots (QDs) using density functional theory (DFT). From the structural parameters the TMPO passivated structures shows strong structural distortion along non-polar 11 2 bar 0 surface. Besides, the binding energy values indicate that the TMPO ligands are weakly bound to 11 2 bar 0 surface. On introducing DMPO at 11 2 bar 0 non-polar surface from binding energy values, we observe significant surface reconstruction and stabilization of the structure due to the Se-H dative bond in addition to strong Cd-O bond. The NBO analysis indicates that charge transfer is maximum between metal and ligand in 11 2 bar 0 surface. The results of PDOS and molecular orbital (MO) analyses show that DMPO ligands significantly contribute to the occupied molecular orbitals near HOMO, which is not case in QDs with pure TMPO ligand. Further, the absorption spectra of CdSe QDs indicate that optical gaps are blue shifted by DMPOs. Hence, the multiple ligands can be employed in tuning the desired structural and optoelectronic properties of colloidal QDs (CQDs).

  15. Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

    NASA Astrophysics Data System (ADS)

    Hospodková, A.; Pangrác, J.; Oswald, J.; Hazdra, P.; Kuldová, K.; Vyskočil, J.; Hulicius, E.

    2011-01-01

    We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple QD structures without SRL have negligible difference between the PL and EL maxima, which are near 1250 nm. InGaAs and GaAsSb SRLs were used to shift the luminescence maximum towards telecommunication wavelengths at 1.3 or 1.55 μm. We have found that MOVPE prepared QD structures with SRL exhibit an EL maximum at a considerably shorter wavelength than the PL maximum measured on similar samples without doping in the absence of built-in electric field. A mechanism to explain this phenomenon is proposed for both types of SRLs. The GaAsSb SRL is more suitable for long wavelength EL due to the higher confinement potential of electrons compared to InGaAs SRL. EL maximum at 1300 nm and PL maximum at 1520 nm were achieved on InAs QD structures with GaAs 0.87Sb 0.13 SRL (type I heterojunction).

  16. Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures

    SciTech Connect

    Manna, U.; Noyan, I. C.; Neumark, G. F.; Zhang, Q.; Moug, R.; Salakhutdinov, I. F.; Dunn, K. A.; Novak, S. W.; Tamargo, M. C.; Kuskovsky, I. L.

    2012-02-01

    We report the structural properties and spatial ordering of multilayer ZnMgTe quantum dots (QDs) embedded in ZnSe, where sub-monolayer quantities of Mg were introduced periodically during growth in order to reduce the valence band offset of ZnTe QDs. The periodicity, period dispersion, individual layer thickness, and the composition of the multilayer structures were determined by comparing the experimental high resolution x-ray diffraction (HRXRD) spectra to simulated ones for the allowed (004) and quasi-forbidden (002) reflections in combination with transmission electron microscopy (TEM) results. Secondary ion mass spectroscopy (SIMS) profiles confirmed the incorporation of Mg inside the QD layers, and the HRXRD analysis revealed that there is approximately 32% Mg in the ZnMgTe QDs. The presence of Mg contributes to higher scattering intensity of the HRXRD, leading to the observation of higher order superlattice peaks in both the (004) and (002) reflections. The distribution of scattered intensity in the reciprocal space map (RSM) shows that the diffuse scattered intensity is elongated along the q{sub x} axis, indicating a vertical correlation of the dots, which is found to be less defined for the sample with larger periodicity. The diffuse scattered intensity is also found to be weakly correlated along the q{sub z} direction indicating a weak lateral correlation of the dots.

  17. Electrical and optical study of an indium gallium arsenide/gallium arsenide multi-quantum well structure for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    An, Sangwoo

    2000-08-01

    InGaAs is a III-V material system that has recently attracted a lot of interest for possible optoelectronic applications. When grown over a GaAs substrate, it provides an example of a strained-layer system, due to the lattice mismatch of the layers. As long as the strained layers are grown shorter than a critical thickness, the material is pseudomorphic and presents no catastrophic degrading. Thus, it can be used for different devices, such as lasers, detectors, switches, and spatial light modulators. In this work a low-dimensional structure, composed of different stacks of InGaAs quantum wells embedded in a matrix of GaAs barriers, is investigated. This work addresses a number of important issues involving material properties and basic physical effects. In addition it discloses the concept of an improved, multicolor, spatial light modulator. Material information about InGaAs is abundant but not exhaustive as for the GaAs system. We have performed an in-depth spectroscopic study of a complex structure, composed of serially grown stacks of stepped quantum wells, where it is possible, in principle, to observe large Stark shifts. In this sample we have studied the formation of electrical high and low-field domains along the multi-quantum well region with a number of spectroscopic techniques. Electrical and optical measurements have been performed and have given an extensive characterization of the sample. Experimental results closely match theoretical calculations performed under the effective mass approximation. Excitonic peaks at room temperatures have been clearly resolved, a first for InGaAs stepped quantum well samples. Formation and expansion of electric field domains along the shallow multi-quantum well region have been recorded. For the first time an observation of the interplay of high field domains involving shallow quantum well levels and resonances in the continuum, have been observed. New techniques to probe such high field domains have been developed

  18. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

    SciTech Connect

    Kim, Jeonghee Laurent, Matthew A.; Li, Haoran; Lal, Shalini; Mishra, Umesh K.

    2015-01-12

    This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V{sub GS} = 0 V and L{sub go} = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials.

  19. The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

    SciTech Connect

    Kuzmenkov, A. G. Blokhin, S. A.; Maleev, N. A.; Sakharov, A. V.; Tikhomirov, V. G.; Maksimov, M. V.; Ustinov, V. M.; Kovsh, A. R.; Mikhrin, S. S.; Ledentsov, N. N.; Yang, H. P. D.; Lin, G.; Hsiao, R. S.; Chi, J. Y.

    2007-10-15

    To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was used. Single-mode vertical-cavity surface-emitting lasers for spectral region of 990 nm with current-aperture diameter of 20 {mu}m, threshold current 0.9 mA, and maximum output power 3.8 mW at room temperature were demonstrated. Single-mode lasing with the coefficient of side-mode suppression in excess of 35 dB is retained in the entire range of pump currents. A decrease in the current oxide aperture to sizes that are close to those of the optical aperture brings about an increase in the external quantum efficiency; however, in this case, the transition to the multimode of lasing is observed at high pump currents.

  20. Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Kong, Eugene Y.-J.; Ivana; Zhang, Xingui; Zhou, Qian; Pan, Jisheng; Zhang, Zheng; Yeo, Yee-Chia

    2013-07-01

    The formation of salicide-like source/drain contacts on III-V MOSFETs necessitates a search for suitable metals that can react with III-V materials to form ohmic contacts with low sheet resistance and contact resistivity. To advance this search, the reaction between Pd and In0.53Ga0.47As is explored in this work. Reaction temperatures ranging from 200 to 400 °C were investigated, and extensive physical and electrical characterization was performed. Pd completely reacts with In0.53Ga0.47As after annealing at temperatures as low as 200 °C for 60 s to form a very smooth and uniform Pd-InGaAs film with good interfacial quality. Pd-InGaAs formed at 250 °C was found to have a work function of ˜4.6 ± 0.1 eV, sheet resistance of ˜77.3 Ω/square for a thickness of 20 nm, and contact resistivity of ˜8.35 × 10-5 Ω cm2 on In0.53Ga0.47As with n-type active doping concentration of ˜2 × 1018 cm-3. With further development, Pd-InGaAs could potentially be useful as self-aligned contacts for InGaAs transistors.

  1. Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature

    SciTech Connect

    Golovynskyi, S. L.; Seravalli, L.; Trevisi, G.; Frigeri, P.; Gombia, E.; Dacenko, O. I.; Kondratenko, S. V.

    2015-06-07

    We present the study of optical and photoelectric properties of InAs quantum dots (QDs) grown on a metamorphic In{sub 0.15}Ga{sub 0.85}As buffer layer: such nanostructures show efficient light emission in the telecom window at 1.3 μm (0.95 eV) at room temperature. We prepared a sample with vertical geometry of contacts isolated from the GaAs substrate. The structure is found to be photosensitive in the spectral range above 0.9 eV at room temperature, showing distinctive features in the photovoltage and photocurrent spectra attributed to QDs, InAs wetting layer, and In{sub 0.15}Ga{sub 0.85}As metamorphic buffer, while a drop in the photoelectric signal above 1.36 eV is related to the GaAs layer. No effect of defect centers on the photoelectrical properties is found, although they are observed in the absorption spectrum. We conclude that metamorphic QDs have a low amount of interface-related defects close to the optically active region and charge carriers can be effectively collected into InAs QDs.

  2. Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

    SciTech Connect

    Dialynas, G. E.; Kalliakos, S.; Xenogianni, C.; Androulidaki, M.; Kehagias, T.; Komninou, P.; Savvidis, P. G.; Pelekanos, N. T.; Hatzopoulos, Z.

    2010-11-15

    The structural and optical properties of piezoelectric (211)B InAs nanostructures grown by molecular beam epitaxy are systematically investigated as a function of the various growth parameters. Depending on the specific growth conditions, we show that the InAs nanostructures take the form of a quantum dot (QD) or a quantum dash, their height ranges between 2 and 20 nm, and their density varies from a few times 10{sup 8} cm{sup -2} all the way up to a few times 10{sup 10} cm{sup -2}. The (211)B QDs are characterized by large aspect ratios, which are compatible with a truncated pyramid morphology. By analyzing the QD emission spectrum, we conclude that only small size QDs, with heights less than 3 nm, are optically active. This is consistent with high resolution transmission electron microscopy observations showing that large QDs contain misfit dislocations, whereas small QDs are dislocation-free. The formation of a two-dimensional wetting layer is observed optically, and its thickness is determined to be between 0.30 and 0.39 nm. Finally, the large blueshift in the QD emission observed with increasing excitation power represents a clear evidence of the strong built-in piezoelectric field present in these dots.

  3. InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

    SciTech Connect

    Keizer, J. G.; Koenraad, P. M.; Ulloa, J. M.; Utrilla, A. D.

    2014-02-03

    Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

  4. Structural and electrophysical properties of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well

    SciTech Connect

    Galiev, G. B.; Vasiliev, A. L.; Vasil’evskii, I. S.; Imamov, R. M.; Klimov, E. A.; Klochkov, A. N.; Lavruhin, D. V.; Maltsev, P. P.; Pushkarev, S. S.; Trunkin, I. N.

    2015-05-15

    A complex investigation of structural and electrical properties of In{sub 0.52}Al{sub 0.48}As/In{sub y}Ga{sub 1−y}As/In{sub 0.52}Al{sub 0.48}As nanoheterostructures on InP substrates containing thin InAs and GaAs inserts in a quantum well (QW) has been performed. The GaAs nanolayers are grown at the QW boundaries between InGaAs and InAlAs layers, while the double InAs inserts are grown in InGaAs layers symmetrically with respect to the QW center. The layer and interface structures have been studied by transmission electron microscopy. It is shown that, when using the proposed epitaxial growth conditions, the introduction of ∼1.2-nm-thick InAs nanoinserts into the InGaAs QW and a ∼1-nm-thick GaAs nanobarrier at the QW boundaries does not induce structural defects. The diffusion of the InAlAs/InGaAs interface (2–3 monolayers) and InAs/InGaAs nanoinsert interface (1–2 monolayers) has been estimated. Measured Hall mobilities and electron concentrations in structures with different combinations of InAs and GaAs inserts have been analyzed using calculated energy band diagrams and electron density distributions. It is found that the photoluminescence spectra of the structures under study have differences caused by specific structural features of coupled QWs (specifically, the change in the In molar fraction due to InAs inserts and the change in the QW thickness due to GaAs transition barriers.

  5. Non-destructive mapping of doping and structural composition of MOVPE-grown high current density resonant tunnelling diodes through photoluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Jacobs, K. J. P.; Stevens, B. J.; Mukai, T.; Ohnishi, D.; Hogg, R. A.

    2015-05-01

    We report on photoluminescence (PL) characterisation of metal-organic vapour phase epitaxy (MOVPE) grown high current density (~700 kA/cm2) InGaAs/AlAs/InP based resonant tunnelling diodes (RTDs) for terahertz emission. The PL mapping we describe allows important information about doping level and uniformity, ternary alloy composition and uniformity, and uniformity of quantum well thickness to be deduced. PL as a function of doping concentration is studied for InGaAs test layers at low temperatures and correlated to secondary-ion mass spectroscopy (SIMS) and electrochemical capacitance-voltage (eCV) profiling to provide non-destructive mapping of doping over the wafer. For the RTD structures, we utilise eCV as a selective etch tool to identify the origin of low temperature PL emission from the quantum well (QW) and the highly doped contact layers. PL mapping of the RTD wafer at low temperatures is shown to allow the assessment of variations in InGaAs alloy composition and QW thickness. Details of the growth process are discussed and confirmed using high resolution X-ray diffraction (HRXRD) crystallography. The rapid non-destructive characterisation and wafer mapping of these structures promises a route to future growth optimisation of such structures.

  6. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    NASA Astrophysics Data System (ADS)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-05-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  7. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    NASA Astrophysics Data System (ADS)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-08-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  8. Probing structure-induced optical behavior in a new class of self-activated luminescent 0D/1D CaWO₄ metal oxide – CdSe nanocrystal composite heterostructures

    DOE PAGESBeta

    Han, Jinkyu; McBean, Coray; Wang, Lei; Hoy, Jessica; Jaye, Cherno; Liu, Haiqing; Li, Zhuo-Qun; Sfeir, Matthew Y.; Fischer, Daniel A.; Taylor, Gordon T.; et al

    2015-01-30

    In this report, we synthesize and characterize the structural and optical properties of novel heterostructures composed of (i) semiconducting nanocrystalline CdSe quantum dot (QDs) coupled with (ii) both one and zero-dimensional (1D and 0D) motifs of self-activated luminescence CaWO₄ metal oxides. Specifically, ~4 nm CdSe QDs have been anchored onto (i) high-aspect ratio 1D nanowires, measuring ~230 nm in diameter and ~3 μm in length, as well as onto (ii) crystalline 0D nanoparticles (possessing an average diameter of ~ 80 nm) of CaWO₄ through the mediation of 3-mercaptopropionic acid (MPA) as a connecting linker. Composite formation was confirmed by complementarymore » electron microscopy and spectroscopy (i.e. IR and Raman) data. In terms of luminescent properties, our results show that our 1D and 0D heterostructures evince photoluminescence (PL) quenching and shortened PL lifetimes of CaWO₄ as compared with unbound CaWO₄. We propose that a photo-induced electron transfer process occurs from CaWO₄ to CdSe QDs, a scenario which has been confirmed by NEXAFS measurements and which highlights a decrease in the number of unoccupied orbitals in the conduction bands of CdSe QDs. By contrast, the PL signature and lifetimes of MPA-capped CdSe QDs within these heterostructures do not exhibit noticeable changes as compared with unbound MPA-capped CdSe QDs. The striking difference in optical behavior between CaWO₄ nanostructures and CdSe QDs within our heterostructures can be correlated with the relative positions of their conduction and valence energy band levels. In addition, the PL quenching behaviors for CaWO₄ within the heterostructure configuration were examined by systematically varying (i) the quantities and coverage densities of CdSe QDs as well as (ii) the intrinsic morphology (and by extension, the inherent crystallite size) of CaWO₄ itself.« less

  9. Full spin-coated multilayer structure hybrid light-emitting devices

    NASA Astrophysics Data System (ADS)

    Cheng, Gang; Mazzeo, Marco; Carallo, Sonia; Wang, Huiping; Ma, Yuguang; Gigli, Giuseppe

    2010-09-01

    We report on a multilayer structure hybrid light-emitting device (HLED) using a water/alcohol-soluble polymer poly(9,9-bis{30-[(N,N-dimethyl)-N-ethylammonium}-propyl]-2,7-fluorene dibromide) as an electron-transporting layer and a close-packed quantum dot-layer (QD-layer) as an emitting layer. The device was realized by full spin-coating technology without thermal evaporation process for the deposition of organic layers. The QD-layer was a mixture of QDs with two different sizes, in which large size QD-emitters were dispersed in small size QDs to weaken the concentration quenching. The device achieved a maximum power efficiency of 0.58 lm/W, which nearly quadrupled that of the HLED with a plain large size QD-EML.

  10. Size dependence of the electronic structures and electron-phonon coupling in ZnO quantum dots

    NASA Astrophysics Data System (ADS)

    Ray, S. C.; Low, Y.; Tsai, H. M.; Pao, C. W.; Chiou, J. W.; Yang, S. C.; Chien, F. Z.; Pong, W. F.; Tsai, M.-H.; Lin, K. F.; Cheng, H. M.; Hsieh, W. F.; Lee, J. F.

    2007-12-01

    The electronic structures and optical properties of various sizes of ZnO quantum dots (QDs) were studied using x-ray absorption, photoluminescence, and Raman spectroscopy. The increase in the intensity ratio of the second-order Raman spectra of longitudinal optical mode and its fundamental mode, which is related to the strength of the electron-phonon coupling (EPC), is found to increase with the size of QD. The trend of EPC also correlates with the increase of the intensity ratio of the O 2pπ (Iπ) and 2pσ (Iσ) orbital features in the O K-edge x-ray absorption near-edge structure (XANES) as the size of QD increases. The EPC and XANES results suggest that the crystal orientations of ZnO QDs are approximately aligned with the c axis parallel with the polarization of x-ray photons.

  11. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

    SciTech Connect

    Shimomura, Kenichi; Ohshita, Yoshio; Kamiya, Itaru; Suzuki, Hidetoshi; Sasaki, Takuo; Takahasi, Masamitu

    2015-11-14

    Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping. The difference observed is attributed to In-Ga intermixing between the QDs and the cap layer under limited supply of In. Photoluminescence (PL) wavelength can be tuned by controlling the intermixing, which affects both the strain induced in the QDs and the barrier heights. The PL wavelength also varies with the cap layer thickness. A large redshift occurs by reducing the cap thickness. The in situ XRD observation reveals that this is a result of reduced strain. We demonstrate how such information about strain can be applied for designing and preparing novel device structures.

  12. Capability of coupled CdSe/TiO2 heterogeneous structure for photocatalytic degradation and photoconductivity.

    PubMed

    Zhang, Miao; Xu, Yanyan; Lv, Jianguo; Yang, Lei; Jiang, Xishun; He, Gang; Song, Xueping; Sun, Zhaoqi

    2014-01-01

    Highly ordered TiO2 nanotube arrays (TiO2-NTAs), with a uniform tube size on titanium substrate, were obtained by means of reoxidation and annealing. A composite structure, CdSe quantum dots@TiO2 nanotube arrays (CdSe QDs@TiO2-NTAs), was fabricated by assembling CdSe quantum dots into TiO2-NTAs via cyclic voltammetry electrochemical deposition. The X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), and transmission electron microscope (TEM) were carried out for the determination of the composition and structure of the tubular layers. Optical properties were investigated by ultraviolet-visible spectrophotometer (UV-Vis). Photocurrent response under visible light illumination and photocatalytic activity of samples by degradation of methyl orange were measured. The results demonstrated that the photo absorption of the composite film shifted to the visible region, and the photocurrent intensity was greatly enhanced due to the assembly of CdSe QDs. Especially, photocurrent achieved a maximum of 1.853 μA/cm(2) after five voltammetry cycles of all samples. After irradiation under ultra violet-visible light for 2 h, the degradation rate of composition to methyl orange (MO) reached 88.20%, demonstrating that the CdSe QDs@TiO2-NTAs exhibited higher photocatalytic activity. PMID:25489287

  13. Capability of coupled CdSe/TiO2 heterogeneous structure for photocatalytic degradation and photoconductivity

    PubMed Central

    2014-01-01

    Highly ordered TiO2 nanotube arrays (TiO2-NTAs), with a uniform tube size on titanium substrate, were obtained by means of reoxidation and annealing. A composite structure, CdSe quantum dots@TiO2 nanotube arrays (CdSe QDs@TiO2-NTAs), was fabricated by assembling CdSe quantum dots into TiO2-NTAs via cyclic voltammetry electrochemical deposition. The X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), and transmission electron microscope (TEM) were carried out for the determination of the composition and structure of the tubular layers. Optical properties were investigated by ultraviolet-visible spectrophotometer (UV-Vis). Photocurrent response under visible light illumination and photocatalytic activity of samples by degradation of methyl orange were measured. The results demonstrated that the photo absorption of the composite film shifted to the visible region, and the photocurrent intensity was greatly enhanced due to the assembly of CdSe QDs. Especially, photocurrent achieved a maximum of 1.853 μA/cm2 after five voltammetry cycles of all samples. After irradiation under ultra violet-visible light for 2 h, the degradation rate of composition to methyl orange (MO) reached 88.20%, demonstrating that the CdSe QDs@TiO2-NTAs exhibited higher photocatalytic activity. PMID:25489287

  14. Capability of coupled CdSe/TiO2 heterogeneous structure for photocatalytic degradation and photoconductivity

    NASA Astrophysics Data System (ADS)

    Zhang, Miao; Xu, Yanyan; Lv, Jianguo; Yang, Lei; Jiang, Xishun; He, Gang; Song, Xueping; Sun, Zhaoqi

    2014-11-01

    Highly ordered TiO2 nanotube arrays (TiO2-NTAs), with a uniform tube size on titanium substrate, were obtained by means of reoxidation and annealing. A composite structure, CdSe quantum dots@TiO2 nanotube arrays (CdSe QDs@TiO2-NTAs), was fabricated by assembling CdSe quantum dots into TiO2-NTAs via cyclic voltammetry electrochemical deposition. The X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), and transmission electron microscope (TEM) were carried out for the determination of the composition and structure of the tubular layers. Optical properties were investigated by ultraviolet-visible spectrophotometer (UV-Vis). Photocurrent response under visible light illumination and photocatalytic activity of samples by degradation of methyl orange were measured. The results demonstrated that the photo absorption of the composite film shifted to the visible region, and the photocurrent intensity was greatly enhanced due to the assembly of CdSe QDs. Especially, photocurrent achieved a maximum of 1.853 μA/cm2 after five voltammetry cycles of all samples. After irradiation under ultra violet-visible light for 2 h, the degradation rate of composition to methyl orange (MO) reached 88.20%, demonstrating that the CdSe QDs@TiO2-NTAs exhibited higher photocatalytic activity.

  15. Imaging Excited Orbitals of Quantum Dots: Experiment and Electronic Structure Theory.

    PubMed

    Nienhaus, Lea; Goings, Joshua J; Nguyen, Duc; Wieghold, Sarah; Lyding, Joseph W; Li, Xiaosong; Gruebele, Martin

    2015-11-25

    Electronically excited orbitals play a fundamental role in chemical reactivity and spectroscopy. In nanostructures, orbital shape is diagnostic of defects that control blinking, surface carrier dynamics, and other important optoelectronic properties. We capture nanometer resolution images of electronically excited PbS quantum dots (QDs) by single molecule absorption scanning tunneling microscopy (SMA-STM). Dots with a bandgap of ∼1 eV are deposited on a transparent gold surface and optically excited with red or green light to produce hot carriers. The STM tip-enhanced laser light produces a large excited-state population, and the Stark effect allows transitions to be tuned into resonance by changing the sample voltage. Scanning the QDs under laser excitation, we were able to image electronic excitation to different angular momentum states depending on sample bias. The shapes differ from idealized S- or P-like orbitals due to imperfections of the QDs. Excitation of adjacent QD pairs reveals orbital alignment, evidence for electronic coupling between dots. Electronic structure modeling of a small PbS QD, when scaled for size, reveals Stark tuning and variation in the transition moment of different parity states, supporting the simple one-electron experimental interpretation in the hot carrier limit. The calculations highlight the sensitivity of orbital density to applied field, laser wavelength, and structural fluctuations of the QD. PMID:26518039

  16. Enhanced photoelectrochemical strategy for ultrasensitive DNA detection based on two different sizes of CdTe quantum dots cosensitized TiO2/CdS:Mn hybrid structure.

    PubMed

    Fan, Gao-Chao; Han, Li; Zhang, Jian-Rong; Zhu, Jun-Jie

    2014-11-01

    A TiO2/CdS:Mn hybrid structure cosensitized with two different sizes of CdTe quantum dots (QDs) was designed to develop a novel and ultrasensitive photoelectrochemical DNA assay. In this protocol, TiO2/CdS:Mn hybrid structure was prepared by successive adsorption and reaction of Cd(2+)/Mn(2+) and S(2-) ions on the surface of TiO2 film and then was employed as matrix for immobilization of hairpin DNA probe, whereas large-sized CdTe-COOH QDs and small-sized CdTe-NH2 QDs as signal amplification elements were successively labeled on the terminal of hairpin DNA probe. The target DNA detection was based upon the photocurrent change originated from conformation change of the hairpin DNA probe after hybridization with target DNA. In the absence of target DNA, the immobilized DNA probe was in the hairpin form and the anchored different sizes of CdTe-COOH and CdTe-NH2 QDs were close to the TiO2/CdS:Mn electrode surface, which led to a very strong photocurrent intensity because of the formation of the cosensitized structure. However, in the presence of target DNA, the hairpin DNA probe hybridized with target DNA and changed into a more rigid, rodlike double helix, which forced the multianchored CdTe QDs away from the TiO2/CdS:Mn electrode surface, resulting in significantly decreased photocurrent intensity because of the vanished cosensitization effect. By using this cosensitization signal amplification strategy, the proposed DNA assay could offer an ultrasensitive and specific detection of DNA down to 27 aM, and it opened up a new promising platform to detect various DNA targets at ultralow levels for early diagnoses of different diseases. PMID:25294102

  17. Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele

    2016-01-01

    We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k · p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0.53Ga0.47 As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III-V semiconductor band structure calculation methods and calibrated band parameters for device simulations.

  18. Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates

    NASA Astrophysics Data System (ADS)

    Maigné, P.; Gendry, M.; Venet, T.; Tahri, Y.; Hollinger, G.

    1996-07-01

    High resolution x-ray diffraction has been used to investigate the structural properties of InxGa1-xAs epitaxial layers grown under tension on InP(100) substrates. The nominal indium composition (x=0.42) corresponds to a small lattice mismatch and a two dimensional growth mode. We have also included for comparison two samples grown under compression covering the mostly strained and the mostly relaxed regimes. Our results show that the residual strain and the asymmetry in strain relaxation along <011> directions are always larger for layers under tension. This can be explained by the difference in dislocation glide velocity induced by a different indium content, by the dissociation of perfect dislocations and partially by the difference in thermal expansion coefficients between substrate and epilayer. The larger asymmetry in strain relaxation for tensile strain layers is interpreted by the existence of microcracks aligned in the [011] direction.

  19. InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L.

    2010-12-01

    We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial InxGa1-xAs (x˜0.20) inserts with thicknesses from 36 to 220 nm with ±10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

  20. Direct and phonon-assisted indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs computed using Green's function formalism

    NASA Astrophysics Data System (ADS)

    Wen, Hanqing; Pinkie, Benjamin; Bellotti, Enrico

    2015-07-01

    Direct and phonon-assisted (PA) indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs is calculated and compared under different lattice temperatures and doping concentrations. Using the Green's function theory, the electron self energy computed from the electron-phonon interaction is incorporated into the quantum-mechanical expressions of Auger and radiative recombination, which renders the corresponding minority carrier lifetime in the materials due to both direct and PA indirect processes. Specifically, the results of two pairs of materials, namely, InAs0.91Sb0.09, Hg0.67Cd0.33Te and In0.53Ga0.47As, Hg0.38Cd0.62Te with cutoff wavelengths of 4 μm and 1.7 μm at 200 K and 300 K, respectively, are presented. It is shown that for InAs0.91Sb0.09 and Hg0.67Cd0.33Te, when the lattice temperature falls below 250 K the radiative process becomes the limiting factor of carrier lifetime in both materials at an n-type doping of 1015 cm-3, while at a constant temperature of 200 K, a high n-type doping (ND > 5 × 1015 cm-3 for InAs0.91Sb0.09 and 3 × 1015 cm-3 for Hg0.67Cd0.33Te) makes the Auger process dominate. For the Auger lifetime in In0.53Ga0.47As and Hg0.38Cd0.62Te, the calculation suggested that under all the temperatures and n-doping concentrations investigated in this paper, radiative process is always the limiting factor of the materials' minority carrier lifetime. The calculation of the PA indirect Auger process in the four materials further demonstrated its indispensable contribution to the materials' total Auger rate especially at low temperature, which is necessary to reproduce some experimental data. By fitting the Beattie-Landsberg-Blakemore (BLB) formula to the numerical Auger results, the corresponding overlap integral factors | F 1 F 2 | in BLB theory are evaluated and presented to facilitate fast and accurate Auger calculations in the IR detector simulations.

  1. Tandem structured quantum dot/rod sensitized solar cell based on solvothermal synthesized CdSe quantum dots and rods

    NASA Astrophysics Data System (ADS)

    Golobostanfard, Mohammad Reza; Abdizadeh, Hossein

    2014-06-01

    The quantum dots (QD) and quantum rods (QR) of different sizes, shapes, and crystalline phases are synthesized by modified solvothermal method spontaneously employed stirring system and controlled internal applied pressure. The tandem structure of QDs and QRs as well as tetrapods is formed on hierarchical porous titania photoanode by means of electrophoretic deposition. A tremendous enhancement in efficiency of the cell is obtained in samples synthesized at 220 °C for 24 h due to the formation of tandem structure, utilization of Cu2S/CNT composite cathode, co-sensitization of CdS and CdSe, and beneficial role of QRs in electron lifetime. Smaller size QDs with higher band gaps penetrate deeper through the macro-channels of the hierarchical porous structure, while the QRs and tetrapods with lower band gaps are placed on upper layers. Although the charge injection is improved in smaller QDs, the electron lifetime in QRs is longer mainly due to the higher absorption cross section, proper charge separation, introduction of quasi-one dimensional route for charge transport through QRs, and higher surface area available for regeneration with electrolyte. The cell shows the efficiency of 1.05% with JSC of 4.48 mA cm-2, VOC of 0.45 V, and fill factor of 0.52.

  2. Shubnikov de Haas Effect and Electron Mobilities in the Isomorphic InGaAs Quantum Well With the InAs Insert on the InP Substrate

    NASA Astrophysics Data System (ADS)

    Kulbachinskii, V. A.; Oveshnikov, L. N.; Lunin, R. A.; Yuzeeva, N. A.; Galiev, G. B.; Klimov, E. A.

    2014-12-01

    The Shubnikov - de Haas (SdH) effect at T=4.2 and 8.4 K and the Hall effect have been investigated in isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum well with InAs inserts to the center of the quantum well. The structures were both- sides delta-doped by silicon. The effective mass m* was measured by SdH effect by a new method which allowed experimentally to determine m* in the every dimensionally quantized subband using the temperature dependence of the SdH effect amplitude. Central InAs inserts in a quantum well lead to a decreasing of m* by about 20% as compared with the uniform In0.53Ga0.47As lattice-matched quantum well. We also calculated the transport and quantum mobility of electrons in dimensionally quantized subbands using the SdH effect. The calculated and experimentally determined values are in a good agreement.

  3. Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 μm infrared radiation

    NASA Astrophysics Data System (ADS)

    Kaniewski, J.; Muszalski, J.; Pawluczyk, J.; Piotrowski, J.

    2005-05-01

    Resonant cavity enhanced photodetectors are promising candidates for applications in high-speed optical communications due to their high quantum efficiency and large bandwidth. This is a consequence of placing the thin absorber of the photodetector inside a Fabry-Perot microcavity so the absorption could be enhanced by recycling the photons with resonance wavelength. The performance of uncooled resonant cavity enhanced InGaAs/InAlAs photovoltaic devices operating near 1.55 μm has been studied both theoretically and experimentally. The analyses include two different types of structures with cavity end mirrors made of semiconducting and metallic reflectors as well as semiconducting and hybrid (dielectric Si3N4/SiO2 + metal) Bragg reflectors. Optimization of the device design includes: absorption layer thickness, position of absorption layer within the cavity and number of layers in distributed Bragg reflectors. Dependence of absorption on wavelength and incidence angle are discussed. Various issues related to applications of resonance cavity enhanced photodiodes in optical systems are considered. Practical devices with metallic and hybrid mirrors were fabricated by molecular beam epitaxy and by microwave-compatible processing. A properly designed device of this type has potential for subpicosecond response time.

  4. Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Sun, H. D.; Clark, A. H.; Calvez, S.; Dawson, M. D.; Kim, K. S.; Kim, T.; Park, Y. J.

    2005-07-01

    We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics.

  5. Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides

    PubMed Central

    2011-01-01

    The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices. PMID:21711749

  6. Structural, photoconductivity and photoluminescence characterization of cadmium sulfide quantum dots prepared by a co-precipitation method

    NASA Astrophysics Data System (ADS)

    Mishra, Sheo K.; Srivastava, Rajneesh K.; Prakash, S. G.; Yadav, Raghvendra S.; Panday, A. C.

    2011-03-01

    In this paper, cadmium sulfide (CdS) quantum dots (QDs) are synthesized by a simple co-precipitation method. X-ray diffraction (XRD) confirmed the formation of a cubical zinc blend structure of CdS nanoparticles. Transmission Electron Microscopy (TEM) images revealed that the CdS QDs are of 2-5 nm in size. The UV-vis absorption spectra showed an absorption peak at 427 nm (˜2.90 eV) indicating a blue shift of 0.48 eV as compared to bulk CdS. We estimated the particle sizes with the help of X-ray diffraction (XRD) patterns (3.665 nm) and the shift of the band gap absorption in the UV-vis spectrum (4.276 nm), which is very close to the TEM micrograph result. The photoluminescence spectrum shows three major emission peaks centered at 453 nm (˜2.73 eV), 526 nm (˜2.35 eV) and 551 nm (˜2.24 eV) at room temperature, which may be attributed to excitonic transitions, donor-acceptor (D-A) pairs recombination and the sulphur interstitial defects (Is) present in the band gap. To study the photoconductivity, the field dependence of the photocurrent and the dark-current was assessed, as was the time-resolved rise and decay photocurrent spectrum and wavelength-dependence photocurrent spectrum assessment of the CdS QDs. The time-resolved rise and decay photocurrent spectra exhibited negative photoconductivity (NPC) behavior when the CdS QDs were illuminated with 490 nm light. Such anomalous NPC may be attributed to the light-induced desorption of water molecules. The wavelength-dependence of the photocurrent was found to be close to the absorption and PL spectrum. The photoconductivity properties of the CdS QDs were measured using a thick film of powder without any binder. These CdS QDs can find potential application in optoelectronic devices and photodetectors.

  7. Low temperature Zn diffusion for GaSb solar cell structures fabrication

    NASA Technical Reports Server (NTRS)

    Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

    1995-01-01

    Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

  8. Photosensitive functionalized surface-modified quantum dots for polymeric structures via two-photon-initiated polymerization technique.

    PubMed

    Krini, Redouane; Ha, Cheol Woo; Prabhakaran, Prem; Mard, Hicham El; Yang, Dong-Yol; Zentel, Rudolf; Lee, Kwang-Sup

    2015-06-01

    In this paper, the surface modification of CdSe- and CdZnS-based quantum dots (QDs) with a functional silica shell is reported. Functionalized silica shells are prepared by two routes: either by ligand exchange and a modified Stöber process or by a miniemulsion process with amphiphilic poly(oxyethylene) nonylphenylether also know as Igepal CO-520 (IG) as oligomeric amphiphile and modified silica precursors. The polymerizable groups on the functionalized silica shell allow covalent bonding to a polymer matrix and prevent demixing during polymerization and crosslinking. This allows the homogeneous incorporation of QDs in a crosslinked polymer matrix. This paper furthermore demonstrates that the resulting QDs, which are i) shielded with a proper silica shell and ii) functionalized with crosslinkable groups, can be used in two-photon-initiated polymerization processes in combination with different photoresists to obtain highly luminescent 3D structures. The resulting luminescent structures are attractive candidates for photonics and metamaterials research. PMID:25855210

  9. Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures

    NASA Astrophysics Data System (ADS)

    Golovynskyi, S. L.; Dacenko, O. I.; Kondratenko, S. V.; Lavoryk, S. R.; Mazur, Yu. I.; Wang, Zh. M.; Ware, M. E.; Tarasov, G. G.; Salamo, G. J.

    2016-05-01

    Photoelectric properties of laterally correlated multilayer InGaAs/GaAs quantum dots (QDs) heterostructures are studied. The response of the photocurrent to increasing excitation intensity is found to be nonlinear and varying with excitation energy. The structures are photosensitive in a wide range of photon energies above 0.6 eV. The spectral dependence of the photoconductivity (PC) is caused by strong interaction between the bulk GaAs and the lower energy states of the wetting layer, the QDs, as well as the defect states in the GaAs band gap. In particular, a mechanism for the participation of deep electron trap levels in the photocurrent is clarified. These structures also demonstrate a high sensitivity of up to 10 A/W at low excitation intensities. However, at higher excitation intensities, the sensitivity reduces exhibiting a strong spectral dependence at the same time. The observed sublinear PC dependence on excitation power results from a direct electron-hole recombination both in the QDs and in GaAs host. The solution of rate equations included the contributions of QD ground and exited states, bulk GaAs states and the states of defects within the GaAs bandgap describes well the experimental data.

  10. InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Teng, Teng; Ai, Likun; Xu, Anhuai; Sun, Hao; Zhu, Fuying; Qi, Ming

    2011-05-01

    A new InP/InGaAs/InP DHBT structure with graded composition base was optimized and grown successfully in this work. The gallium (Ga) composition increased gradually from 47% on the collector side to 55% on the emitter side. The InP/InGaAs/InP DHBT structures were grown by gas source molecular beam epitaxy (GSMBE). Characteristics of InP, InGaAs and InGaAsP materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100×100 μm2 was fabricated. The offset voltage of 0.2 V, BVCEO>1.2 V, current gain of ß=550 at VCE of 1.0 V were achieved. The reasons for the low breakdown voltage were analyzed.

  11. Optical Spectroscopy of Nano Materials and Structures

    NASA Astrophysics Data System (ADS)

    Guo, Wenhao

    broadening which is caused by the bandgap change. The experimental results confirm our speculation. When we make the nanowire straight again, the redshift disappears. It is believed that this piezoelectric effect is very important to the application of nanowires, and it would benefit the actual design and fabrication for the electronic devices for the next generation. Lastly, as for the OD case, the charge transfer mechanism occurring at the interface between graphene and ZnO QDs is investigated. We fabricate a hybrid structure by placing ZnO QDs on top of graphene. With UV light illumination on this device, it will generate electron-hole pairs inside QDs. Before they recombine, the holes will be separated and trapped into the surface states, and discharge the oxygen ions adsorbed on the surface of QDs. The unpaired electrons are then transferred to the graphene layer with a relative long lifetime. After the UV light is switched off, the oxygen molecules will re-adsorb to the QDs surface, capture electrons and recover the graphene's transport properties. Therefore, this hybrid device shows an ultrasensitive response to on-off of the UV laser, with a photoconductive gain as high as 10 7, which can be utilized for practical graphene-based UV sensors and detectors with very high responsivity. This gain can be further enhanced by another 2-3 orders by increasing source-drain voltage, shortening the sample's length, etc. It is believed that optical spectroscopy provides a convenient, efficient and useful method to study the nanomaterials and nanostructures. It is easy to set up, has no harm or degradation to the sample, and could go beyond the diffraction limit. With appropriate design and creative ideas, optical spectroscopy can be further explored, and will boost the development of nanoscience and technology. (Abstract shortened by UMI.).

  12. Reaction mechanism of a PbS-on-ZnO heterostructure and enhanced photovoltaic diode performance with an interface-modulated heterojunction energy band structure.

    PubMed

    Li, Haili; Jiao, Shujie; Ren, Jinxian; Li, Hongtao; Gao, Shiyong; Wang, Jinzhong; Wang, Dongbo; Yu, Qingjiang; Zhang, Yong; Li, Lin

    2016-02-01

    A room temperature successive ionic layer adsorption and reaction (SILAR) method is introduced for fabricating quantum dots-on-wide bandgap semiconductors. Detailed exploration of how SILAR begins and proceeds is performed by analyzing changes in the electronic structure of related elements at interfaces by X-ray photoelectric spectroscopy, together with characterization of optical properties and X-ray diffraction. The distribution of PbS QDs on ZnO, which is critical for optoelectrical applications of PbS with a large dielectric constant, shows a close relationship with the dipping order. A successively deposited PbS QDs layer is obtained when the sample is first immersed in Na2S solution. This is reasonable because the initial formation of different chemical bonds on ZnO nanorods is closely related to dangling bonds and defect states on surfaces. Most importantly, dipping order also affects their optoelectrical characteristics greatly, which can be explained by the heterojunction energy band structure related to the interface. The formation mechanism for PbS QDs on ZnO is confirmed by the fact that the photovoltaic diode device performance is closely related to the dipping order. Our atomic-scale understanding emphasises the fundamental role of surface chemistry in the structure and tuning of optoelectrical properties, and consequently in devices. PMID:26782061

  13. Quantum structures for multiband photon detection

    NASA Astrophysics Data System (ADS)

    Perera, A. G. U.

    2005-09-01

    The work describes multiband photon detectors based on semiconductor micro- and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum Dots-in-a-Well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunneling Quantum Dot Infrared Photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunneling, while the dark current is blocked by AlGaAs/InGaAs tunneling barriers placed in the structure. A two-color infrared detector with photoresponse peaks at ~6 and ~17 μm at room temperature will be discussed. A Homojunction or HEterojunction Interfacial Workfunction Internal Photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.

  14. Core/shell-structured upconversion nanophosphor and cadmium-free quantum-dot bilayer-based near-infrared photodetectors.

    PubMed

    Hong, A-Ra; Kim, Jungyoon; Kim, Su Yeon; Kim, Seong-Il; Lee, Kwangyeol; Jang, Ho Seong

    2015-11-01

    The core/shell-structured upconversion nanophosphors (UCNPs) and Cd-free CuInS(2)/ZnS quantum dots (QDs) were synthesized via coprecipitation and hot-injection methods, respectively, and they were applied to near infrared (NIR) photodetectors. The β-NaYF(4):Yb,Er/β-NaYF(4) UCNPs emitted intense visible light peaking at 522, 542, and 656 nm via (2)H(11/2), (4)S(3/2), and (4)F(9/2)→(4)I(15/2) transitions under excitation with 980 nm NIR light. The core/shell UCNPs showed 6.4 times higher emission intensity than core UCNPs. Charge carriers can be generated from CuInS(2)/ZnS QDs in the QD-UCNP mixture due to their broad absorption in the visible spectral region shorter than 600 nm. The photodetector devices were fabricated by spin-coating CuInS(2)/ZnS QDs on a SiO(2)/Si substrate with patterned gold electrodes followed by spin-coating UCNPs on the QD layer. The fabricated QD-UCNP-bilayer-based device showed a drastically increased photocurrent (128 μA) compared with the QD-layer-based device under 980 nm NIR light illumination. Additionally, the fabricated device showed stable ON-OFF switching properties against on and off NIR light. PMID:26512493

  15. Electrostatic force analysis, optical measurements, and structural characterization of zinc oxide colloidal quantum dots synthesized by sol-gel method

    NASA Astrophysics Data System (ADS)

    Choi, Min S.; Meshik, Xenia; Mukherjee, Souvik; Farid, Sidra; Doan, Samuel; Covnot, Leigha; Dutta, Mitra; Stroscio, Michael A.

    2015-11-01

    ZnO quantum dots (QDs) are used in a variety of applications due to several desirable characteristics, including a wide band gap, luminescence, and biocompatibility. Wurtzite ZnO QDs also exhibit a spontaneous polarization along the growth axis, leading to large electric fields. In this work, ZnO QDs around 7 nm in diameter are synthesized using the sol-gel method. Their size and structure are confirmed using photoluminescence, Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. Additionally, electrostatic force microscopy (EFM) is used to measure the amplitude change in the probe which is associated with the electric field produced by ZnO immobilized by layer-by-layer synthesis technique. The measured electrostatic field of 10 8 V/m is comparable to theoretically predicted value. Additionally, the strength of the electrostatic field is shown to depend on the orientation of the QD's c-axis. These results demonstrate a unique technique of quantifying ZnO's electric force using EFM.

  16. Electronic band structure and optical gain of GaNxBiyAs1-x-y/GaAs pyramidal quantum dots

    NASA Astrophysics Data System (ADS)

    Song, Zhi-Gang; Bose, Sumanta; Fan, Wei-Jun; Li, Shu-Shen

    2016-04-01

    The electronic band structure and optical gain of GaNxBiyAs1-x-y/GaAs pyramidal quantum dots (QDs) are investigated using the 16-band k ṡ p model with constant strain. The optical gain is calculated taking both homogeneous and inhomogeneous broadenings into consideration. The effective band gap falls as we increase the composition of nitrogen (N) and bismuth (Bi) and with an appropriate choice of composition we can tune the emission wavelength to span within 1.3 μm-1.55 μm, for device application in fiber technology. The extent of this red shift is more profound in QDs compared with bulk material due to quantum confinement. Other factors affecting the emission characteristics include virtual crystal, strain profile, band anticrossing (BAC), and valence band anticrossing (VBAC). The strain profile has a profound impact on the electronic structure, specially the valence band of QDs, which can be determined using the composition distribution of wave functions. All these factors eventually affect the optical gain spectrum. With an increase in QD size, we observe a red shift in the emission energy and emergence of secondary peaks owing to transitions or greater energy compared with the fundamental transition.

  17. InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Teng, Teng; Xu, Anhuai; Ai, Likun; Sun, Hao; Qi, Ming

    2013-09-01

    A new InP/InGaAs/InP DHBT structure with high carbon (C)-doped base was optimized and grown successfully by gas source molecular beam epitaxy (GSMBE) in this work. The C-doping concentration is 3×1019 cm-3 with carrier mobility of 66.3 cm2/V s. Characteristics of C-doped InGaAs materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100×100 μm2 was fabricated. The open base breakdown voltage (VBCEO) of 4.2 V and current gain of 60 at VCE of 3.0 V were achieved. All these results prove the material is suitable for DHBT device fabrication.

  18. Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures

    SciTech Connect

    Chan, K.T.; Lightner, M.J.; Patterson, G.A. ); Yu, K.M. )

    1990-05-14

    Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 {degree}C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structures for modulation-doped field-effect transistors grown at 375 and 510 {degree}C under two different As{sub 4} overpressures were also characterized by Van der Pauw measurements and low-temperature photoluminescence. The observed differences in film quality can be explained by the influence of substrate temperature and As{sub 4} flux on the cation surface mobility during growth of the InGaAs layer.

  19. MBE-grown metamorphic lasers for applications at telecom wavelengths

    NASA Astrophysics Data System (ADS)

    Ledentsov, N. N.; Shchukin, V. A.; Kettler, T.; Posilovic, K.; Bimberg, D.; Karachinsky, L. Ya.; Gladyshev, A. Yu.; Maximov, M. V.; Novikov, I. I.; Shernyakov, Yu. M.; Zhukov, A. E.; Ustinov, V. M.; Kovsh, A. R.

    2007-04-01

    We have studied growth phenomena and structural and optical properties of metamorphic (MM) quantum dots (QDs) and QD lasers emitting in the 1.4-1.5 μm range. InAs/InGaAs QDs were grown on top of (In,Ga)As buffer layers deposited on GaAs (1 0 0) substrates. The wavelength of the QDs could be adjusted in the 1400-1600 nm spectral range by changing the composition of the (In,Ga)As matrix layer and by the amount of InAs deposited to form QDs. An additional wavelength shift can be achieved by strained-layer (In,Ga,Al)As overgrowth of the QDs. It is found that high-performance degradation-robust operation of the devices can be achieved through minimization of the defect density in the matrix material and within the QD sheets. A defect-reduction technique involving steps of strain-sensitive overgrowth and selective evaporation of the material in the defect-related areas was applied, leading to both elimination of dislocated clusters and blocking of propagating defects. MM QD lasers exhibited emission wavelength in the 1.4-1.5 μm range with a differential quantum efficiency of about ˜50% and pulsed power up to 7 W, limited by catastrophic optical mirror damage. The narrow-stripe lasers operate in a single transverse mode withstanding continuous wave current densities above 20 kA cm -2 without irreversible degradation. A maximum single mode continuous-wave output power of 220 mW limited by thermal roll-over is obtained. No beam filamentation was observed up to the highest pumping levels. Single-mode devices with as-cleaved facets are tested for 60 °C (800 h) and 70 °C (200 h) junction temperature. No noticeable degradation has been observed at 50 mW cw single mode output power, clearly manifesting for the first time degradation-free laser diodes on foreign substrates. The technology opens a way for integration of various III-V materials with silicon or germanium substrates for the next generation of microprocessors, optical interconnects and cascaded solar cells.

  20. Materials, structures, and devices for high-speed electronics

    NASA Astrophysics Data System (ADS)

    Woollam, John A.; Snyder, Paul G.

    1992-12-01

    Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

  1. Materials, structures, and devices for high-speed electronics

    NASA Technical Reports Server (NTRS)

    Woollam, John A.; Snyder, Paul G.

    1992-01-01

    Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

  2. Investigation of pure and Co2+-doped ZnO quantum dot electronic structures using the density functional theory: choosing the right functional

    NASA Astrophysics Data System (ADS)

    Badaeva, Ekaterina; Feng, Yong; Gamelin, Daniel R.; Li, Xiaosong

    2008-05-01

    The electronic structures of pure and Co2+-doped ZnO quantum dots (QDs) with sizes up to 300 atoms were investigated using three different density functional theory approximations: local spin density approximation (LSDA), gradient-corrected Perdew-Burke-Ernzerhof (PBE) and the hybrid PBE1 functionals with LANL2DZ pseudo-potential and associated basis set. Qualitative agreement among the three methods is found for the pure ZnO nanostructures, but only the hybrid functional reproduces the correct bandgap energies quantitatively. For Co2+-doped ZnO QDs, both LSDA and PBE incorrectly model interactions between Co2+ d levels and the valence band of ZnO, which will strongly impair predictions of dopant-carrier magnetic exchange interactions based on such computational results. Experimental observations are reproduced well in calculations at the hybrid PBE1 level of theory, making this the method of choice for exploring the magnetism of transition metal ions in ZnO QDs computationally. The qualitative features of the Co2+ 3d levels do not change appreciably with changes in cluster size over the range examined, leading to size-dependent dopant-band edge energy differences. The results presented here thus provide an experimentally calibrated framework for future ab initio descriptions of dopant-carrier and dopant-dopant magnetic exchange interactions in diluted magnetic semiconductors (DMS) nanocrystals.

  3. Influence of As{sub 4} flux on the growth kinetics, structure, and optical properties of InAs/GaAs quantum dots

    SciTech Connect

    Garcia, A.; Mateo, C. M.; Defensor, M.; Salvador, A.; Hui, H. K.; Boothroyd, C. B.; Philpott, E.

    2007-10-01

    We report the effects of variations in As{sub 4} growth flux on the evolution of molecular beam epitaxy grown InAs quantum dots (QDs) and their structures and optical properties. For InAs QDs grown under As-stable conditions, evaluated through photoluminescence and atomic force microscopy (AFM) measurements, it is evident that QD size increases with As{sub 4} pressure along with improvement in size uniformity. Furthermore, transmission electron microscopy measurements for InAs layers of critical thicknesses ({approx}1.7 ML) showed decreasing QD density with increasing As{sub 4} pressure accompanied by a strong reduction in photoluminescence (PL) integral intensity. These show that high As{sub 4} fluxes suppress InAs QD formation while the decreasing PL intensity seems to indicate cluster formation that features nonradiative recombination. AFM measurements show larger and denser QDs for samples grown at higher As{sub 4} pressures. These are explained on the basis of adatom condensation during surface cooling and the influence of As{sub 4} pressure on indium incorporation.

  4. Efficient excitation of photoluminescence in a two-dimensional waveguide consisting of a quantum dot-polymer sandwich-type structure.

    PubMed

    Suárez, I; Larrue, A; Rodríguez-Cantó, P J; Almuneau, G; Abargues, R; Chirvony, V S; Martínez-Pastor, J P

    2014-08-15

    In this Letter, we study a new kind of organic polymer waveguide numerically and experimentally by combining an ultrathin (10-50 nm) layer of compactly packed CdSe/ZnS core/shell colloidal quantum dots (QDs) sandwiched between two cladding poly(methyl methacrylate) (PMMA) layers. When a pumping laser beam is coupled into the waveguide edge, light is mostly confined around the QD layer, improving the efficiency of excitation. Moreover, the absence of losses in the claddings allows the propagation of the pumping laser beam along the entire waveguide length; hence, a high-intensity photoluminescence (PL) is produced. Furthermore, a novel fabrication technology is developed to pattern the PMMA into ridge structures by UV lithography in order to provide additional light confinement. The sandwich-type waveguide is analyzed in comparison to a similar one formed by a PMMA film homogeneously doped by the same QDs. A 100-fold enhancement in the waveguided PL is found for the sandwich-type case due to the higher concentration of QDs inside the waveguide. PMID:25121919

  5. Control of Electronic Structures and Phonon Dynamics in Quantum Dot Superlattices by Manipulation of Interior Nanospace.

    PubMed

    Chang, I-Ya; Kim, DaeGwi; Hyeon-Deuk, Kim

    2016-07-20

    Quantum dot (QD) superlattices, periodically ordered array structures of QDs, are expected to provide novel photo-optical functions due to their resonant couplings between adjacent QDs. Here, we computationally demonstrated that electronic structures and phonon dynamics of a QD superlattice can be effectively and selectively controlled by manipulating its interior nanospace, where quantum resonance between neighboring QDs appears, rather than by changing component QD size, shape, compositions, etc. A simple H-passivated Si QD was examined to constitute one-, two-, and three-dimensional QD superlattices, and thermally fluctuating band energies and phonon modes were simulated by finite-temperature ab initio molecular dynamics (MD) simulations. The QD superlattice exhibited a decrease in the band gap energy enhanced by thermal modulations and also exhibited selective extraction of charge carriers out of the component QD, indicating its advantage as a promising platform for implementation in solar cells. Our dynamical phonon analyses based on the ab initio MD simulations revealed that THz-frequency phonon modes were created by an inter-QD crystalline lattice formed in the QD superlattice, which can contribute to low energy thermoelectric conversion and will be useful for direct observation of the dimension-dependent superlattice. Further, we found that crystalline and ligand-originated phonon modes inside each component QD can be independently controlled by asymmetry of the superlattice and by restriction of the interior nanospace, respectively. Taking into account the thermal effects at the finite temperature, we proposed guiding principles for designing efficient and space-saving QD superlattices to develop functional photovoltaic and thermoelectric devices. PMID:27385641

  6. Growth and Strain Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell Structures

    NASA Astrophysics Data System (ADS)

    Alhomoudi, Ibrahim A.

    2016-06-01

    Metalorganic chemical vapor deposition (MOCVD) has been used for development of photovoltaic (PV) structures that enable enhanced efficiency for triple-junction solar cell (TJSC) devices. The in-plane strain, lattice match, surface defects, surface morphology, compositional uniformity, threading dislocations (TDs), and depth profile of each layer of the TJSC structure have been examined. The heteroepitaxial layers were found to be near lattice matched to the substrate with excellent coherence between the layers. The analysis explained that the indium gallium phosphide (InGaP) and indium gallium arsenide (InGaAs) layers on germanium (Ge) substrate are a strained structure with purely tetragonal crystalline phase, which indicates that the TJSC structural layers could maintain high crystalline quality. The biaxial in-plane strain in each layer of the TJSC structure is compressive and varies in magnitude for each layer in the structure, being strongly influenced by the Ge substrate and the multiple epilayers of the PV structure. Transmission electron microscopy (TEM) results show no TDs observed over a region with area of 500 nm2, with surface defect density less than 1 × 108 cm-2. No evidence of stacking faults and no visible defects of antiphase domains (APDs) at interfaces were observed, indicating adequate nucleation of epitaxial layers on the substrate and on subsequent growth layers. Furthermore, secondary-ion mass spectrometry (SIMS) analysis showed no significant Ge diffusion from the substrate into the TJSC structure.

  7. Luminescence and fine structure correlation in ZnO permeated porous silicon nanocomposites.

    PubMed

    Gallach, D; Muñoz-Noval, A; Torres-Costa, V; Manso-Silván, M

    2015-08-28

    Nanocomposites formed by porous silicon (PS) and zinc oxide (ZnO) have potential for applications in optoelectronic devices. However, understanding the distribution of both materials in the nanocomposite, and especially the fine structure of the synthesized ZnO crystals, is key for future device fabrication. This study focuses on the advanced characterization of a range of PS-ZnO nanocomposites by using photon- and ion-based techniques, such as X-ray absorption spectroscopy (XAS) and elastic backscattering spectroscopy (EBS), respectively. PS substrates formed by the electrochemical etching of p(+)-type Si are used as host material for the sol-gel nucleation of ZnO nanoparticles. Different properties are induced by annealing in air at temperatures ranging from 200 °C to 800 °C. Results show that wurtzite ZnO nanoparticles form only at temperatures above 200 °C, coexisting with Si quantum dots (QDs) inside a PS matrix. Increasing the annealing temperature leads to structural and distribution changes that affect the electronic and local structure of the samples changing their luminescence. Temperatures around 800 °C activate the formation of a new zinc silicate phase and transform PS into an amorphous silicon oxide (SiOx, x≈ 2) matrix with a noticeably reduced presence of Si QDs. Thus, these changes affect dramatically the emission from these nanocomposites and their potential applications. PMID:26202423

  8. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M.; Chen, D. D.; Xu, F.

    2014-07-14

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488 nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325 nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  9. Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures.

    PubMed

    Küster, Achim; Heyn, Christian; Ungeheuer, Arne; Juska, Gediminas; Tommaso Moroni, Stefano; Pelucchi, Emanuele; Hansen, Wolfgang

    2016-12-01

    Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy (MBE) chamber. Autocorrelation measurements establish single-photon emission from LDE QDs with a very small correlation function g ((2))(0)≃ 0.01 of the exciton emission. Here, we focus on the influence of the initial hole depth on the QD optical properties with the goal to create deep holes suited for filling with more complex nanostructures like quantum dot molecules (QDM). The depth of droplet etched nanoholes is controlled by the droplet material coverage and the process temperature, where a higher coverage or temperature yields deeper holes. The requirements of high quantum dot uniformity and narrow luminescence linewidth, which are often found in applications, set limits to the process temperature. At high temperatures, the hole depths become inhomogeneous and the linewidth rapidly increases beyond 640 °C. With the present process technique, we identify an upper limit of 40-nm hole depth if the linewidth has to remain below 100 μeV. Furthermore, we study the exciton fine-structure splitting which is increased from 4.6 μeV in 15-nm-deep to 7.9 μeV in 35-nm-deep holes. As an example for the functionalization of deep nanoholes, self-aligned vertically stacked GaAs QD pairs are fabricated by filling of holes with 35 nm depth. Exciton peaks from stacked dots show linewidths below 100 μeV which is close to that from single QDs. PMID:27255902

  10. Quantum-dot blue light emitting diodes utilizing organic/inorganic hybrid structures

    NASA Astrophysics Data System (ADS)

    Wu, Feifei; Hu, Lian; Zhang, Bingpo; Li, Ruifeng; Wu, Huizhen

    2015-02-01

    We report blue color quantum-dot light-emitting diodes (QDLEDs) using an organic-inorganic hybrid structure and CdZnS-ZnS core-shell quantum-dot emitters. In the device organic ploy(3,4-ethylenedioxythiophene):ploy(styrene sulfonate) (PEDOT:PSS) and NN‧-bis(3-methylphenyl)-NN‧-bis(phenyl)-99-spiro-bifluorene (TPD) thin films are respectively used as the hole-injection layer (HIL) and the hole-transporting layer (HTL), and an inorganic ZnSnO thin film is used as the electron-transporting layer (ETL). In the blue QDLEDs, the function of the TPD-HTL is explored and it is found that the device employing a TPD-HTL exhibits much better optical characteristics compared with that having an identical device layout but without the TPD-HTL. The TPD HTL acts as a transition layer and offers a ladder for the injected holes from PEDOT:PSS to the QDs, leading to an more efficient hole injection. It is further found that the intensity ratio between surface-state emission (SSE) and band-edge emission (BEE) (RS/B) of the two devices shows significant difference at high bias voltages. The SSE becomes more prominent at higher bias voltage in the QDLEDs due to the imbalance injection of holes and electrons. The injected holes firstly encounter the excessive electrons accumulated at the surface of the charged QDs, thus the probability of hole-electron recombination at the QDs surface is greatly enhanced at high bias voltages.

  11. Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures

    NASA Astrophysics Data System (ADS)

    Küster, Achim; Heyn, Christian; Ungeheuer, Arne; Juska, Gediminas; Tommaso Moroni, Stefano; Pelucchi, Emanuele; Hansen, Wolfgang

    2016-06-01

    Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy (MBE) chamber. Autocorrelation measurements establish single-photon emission from LDE QDs with a very small correlation function g (2)(0)≃ 0.01 of the exciton emission. Here, we focus on the influence of the initial hole depth on the QD optical properties with the goal to create deep holes suited for filling with more complex nanostructures like quantum dot molecules (QDM). The depth of droplet etched nanoholes is controlled by the droplet material coverage and the process temperature, where a higher coverage or temperature yields deeper holes. The requirements of high quantum dot uniformity and narrow luminescence linewidth, which are often found in applications, set limits to the process temperature. At high temperatures, the hole depths become inhomogeneous and the linewidth rapidly increases beyond 640 °C. With the present process technique, we identify an upper limit of 40-nm hole depth if the linewidth has to remain below 100 μeV. Furthermore, we study the exciton fine-structure splitting which is increased from 4.6 μeV in 15-nm-deep to 7.9 μeV in 35-nm-deep holes. As an example for the functionalization of deep nanoholes, self-aligned vertically stacked GaAs QD pairs are fabricated by filling of holes with 35 nm depth. Exciton peaks from stacked dots show linewidths below 100 μeV which is close to that from single QDs.

  12. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    SciTech Connect

    Xu, Ming Jaffré, Alexandre Alvarez, José Kleider, Jean-Paul Boutchich, Mohamed; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Kanjanachuchai, Songphol

    2015-02-27

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  13. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    NASA Astrophysics Data System (ADS)

    Xu, Ming; Jaffré, Alexandre; Alvarez, José; Kleider, Jean-Paul; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Boutchich, Mohamed; Kanjanachuchai, Songphol

    2015-02-01

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1-10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  14. Progress and prospect of quantum dot lasers

    NASA Astrophysics Data System (ADS)

    Arakawa, Yasuhiko

    2001-10-01

    Optical properties and growth of self-assembled quantum dots (SAQDs) for optoelectronic device applications are discussed. After briefly reviewing the history of research on QD lasers, we discuss growth of InAs SQDs including the light emission at the wavelength of 1.52)mum with a narrow linewidth (22 meV) and the area-controlled growth which demonstrates formation of SAQDs in selected local areas on a growth plane using a SiO)-2) mask with MOCVD growth. Then properties of the InGaAs AQDs are investigated by the near- field photoluminescence excitation spectroscopy which reveals gradually increasing continuum absorption connected with the two-dimensional-like (2D-like) wetting layer, resulting in faster relaxation of electrons due to a crossover between OD and 2D character in the density of states. Moreover, we have investigated InGaN self-assembled QDs on a GaN layer achieving the average diameter as small as 8.4nm and a strong light at room temperature. A laser structure with the stacked InGAN QDs embedded in the active layer was fabricated and room temperature operation of blue InGaN QD lasers was achieved under optical excitation. Carrier confinement in QDs was examined using near-field $DAL- photoluminescence measurement: A very sharp spectral line emitted from excitons in individual InGaN QDs was observed. Establishing AlGaN/GaN DBR of high quality, we succeeded in lasing action in InGaN blue light emitting VCSELs. Enhancement of spontaneous emission is demonstrated. Finally, perspective of QD lasers.

  15. Structural and orientation effects on electronic energy transfer between silicon quantum dots with dopants and with silver adsorbates

    SciTech Connect

    Vinson, N.; Freitag, H.; Micha, D. A.

    2014-06-28

    Starting from the atomic structure of silicon quantum dots (QDs), and utilizing ab initio electronic structure calculations within the Förster resonance energy transfer (FRET) treatment, a model has been developed to characterize electronic excitation energy transfer between QDs. Electronic energy transfer rates, K{sub EET}, between selected identical pairs of crystalline silicon quantum dots systems, either bare, doped with Al or P, or adsorbed with Ag and Ag{sub 3}, have been calculated and analyzed to extend previous work on light absorption by QDs. The effects of their size and relative orientation on energy transfer rates for each system have also been considered. Using time-dependent density functional theory and the hybrid functional HSE06, the FRET treatment was employed to model electronic energy transfer rates within the dipole-dipole interaction approximation. Calculations with adsorbed Ag show that: (a) addition of Ag increases rates up to 100 times, (b) addition of Ag{sub 3} increases rates up to 1000 times, (c) collinear alignment of permanent dipoles increases transfer rates by an order of magnitude compared to parallel orientation, and (d) smaller QD-size increases transfer due to greater electronic orbitals overlap. Calculations with dopants show that: (a) p-type and n-type dopants enhance energy transfer up to two orders of magnitude, (b) surface-doping with P and center-doping with Al show the greatest rates, and (c) K{sub EET} is largest for collinear permanent dipoles when the dopant is on the outer surface and for parallel permanent dipoles when the dopant is inside the QD.

  16. Electron energy spectrum in cylindrical quantum dots and rods: approximation of separation of variables

    NASA Astrophysics Data System (ADS)

    Nedzinskas, R.; Karpus, V.; Čechavičius, B.; Kavaliauskas, J.; Valušis, G.

    2015-06-01

    A simple analytical method for electron energy spectrum calculations of cylindrical quantum dots (QDs) and quantum rods (QRs) is presented. The method is based on a replacement of an actual QD or QR hamiltonian with an approximate one, which allows for a separation of variables. Though this approach is known in the literature, it is essentially expanded in the present paper by taking into account a discontinuity of the effective mass, which is of importance in actual semiconductor heterostructures, e.g., InGaAs QDs or QRs embedded in GaAs matrix. Several examples of InGaAs QDs and QRs are considered—their energy spectrum calculations show that the suggested method yields reliable results both for the ground and excited states. The proposed analytical model is verified by numerical calculations, results of which coincide with an accuracy of ∼1 meV.

  17. Highly efficient energy transfer from quantum dot to allophycocyanin in hybrid structures.

    PubMed

    Karpulevich, A A; Maksimov, E G; Sluchanko, N N; Vasiliev, A N; Paschenko, V Z

    2016-07-01

    Excitation energy transfer (EET) is observed in hybrid structures that composed of allophycocyanin and CdSe/ZnS core-shell quantum dot (QD). We demonstrate that the EET efficiency in such systems could be significantly increased under conditions inducing monomerization of allophycocyanin trimers. For these purposes, the EET efficiency was estimated under different experimental conditions (pH, high temperature or the presence of NaSCN) for self-assembled hybrid structures. Additionally, the hybrid structures were stabilized by covalent coupling which resulted in approximately 20-fold enhancement of allophycocyanin fluorescence upon excitation of QDs. The observed effect provides new opportunities for the practical implementation of hybrid systems as fluorescent markers. PMID:27101277

  18. 3 ns single-shot read-out in a quantum dot-based memory structure

    SciTech Connect

    Nowozin, T. Bimberg, D.; Beckel, A.; Lorke, A.; Geller, M.

    2014-02-03

    Fast read-out of two to six charges per dot from the ground and first excited state in a quantum dot (QD)-based memory is demonstrated using a two-dimensional electron gas. Single-shot measurements on modulation-doped field-effect transistor structures with embedded InAs/GaAs QDs show read-out times as short as 3 ns. At low temperature (T = 4.2 K) this read-out time is still limited by the parasitics of the setup and the device structure. Faster read-out times and a larger read-out signal are expected for an improved setup and device structure.

  19. Viability of imaging structures inside human dentin using dental transillumination

    NASA Astrophysics Data System (ADS)

    Grandisoli, C. L.; Alves-de-Souza, F. D.; Costa, M. M.; Castro, L.; Ana, P. A.; Zezell, D. M.; Lins, E. C.

    2014-02-01

    Dental Transillumination (DT) is a technique for imaging internal structures of teeth by detecting infrared radiation transmitted throughout the specimens. It was successfully used to detect caries even considering dental enamel and dentin scatter infrared radiation strongly. Literature reports enamel's scattering coefficient is 10 to 30 times lower than dentin; this explain why DT is useful for imaging pathologies in dental enamel, but does not disable its using for imaging dental structures or pathologies inside the dentin. There was no conclusive data in the literature about the limitations of using DT to access biomedical information of dentin. The goal in this study was to present an application of DT to imaging internal structures of dentin. Slices of tooth were confectioned varying the thickness of groups from 0.5 mm up to 2,5 mm. For imaging a FPA InGaAs camera Xeva 1.7- 320 (900-1700 nm; Xenics, Inc., Belgium) and a 3W lamp-based broadband light source (Ocean Optics, Inc., USA) was used; bandpass optical filters at 1000+/-10 nm, 1100+/-10 nm, 1200+/-10 nm and 1300+/-50 nm spectral region were also applied to spectral selection. Images were captured for different camera exposure times and finally a computational processing was applied. The best results revealed the viability to imaging dent in tissue with thickness up to 2,5 mm without a filter (900-1700nm spectral range). After these results a pilot experiment of using DT to detect the pulp chamber of an incisive human tooth was made. New data showed the viability to imaging the pulp chamber of specimen.

  20. Growth-interruption-induced low-density InAs quantum dots on GaAs

    SciTech Connect

    Li, L. H.; Alloing, B.; Chauvin, N.; Fiore, A.; Patriarche, G.

    2008-10-15

    We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interruption strongly depend on InAs growth rate. By using this approach, a low density of QDs (4 dots/{mu}m{sup 2}) with uniform size distribution was achieved. As compared to QDs grown without growth interruption, a larger energy separation between the QD confined levels was observed, suggesting a situation closer to the ideal zero-dimensional system. Combining with an InGaAs capping layer such as In-rich QDs enable 1.3 {mu}m emission at 4 K.

  1. Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation

    NASA Astrophysics Data System (ADS)

    Murakumo, Keisuke; Yamaoka, Yuya; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2016-04-01

    We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ∼1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm2 to 10 MW/cm2 order.

  2. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    SciTech Connect

    Ulloa, J. M. Utrilla, A. D.; Guzman, A.; Hierro, A.

    2014-10-07

    Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5 nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

  3. Optical and structural properties of In{sub 0.64}Ga{sub 0.36}As/Al{sub x}Ga{sub 1−x}As(x≤0.2)/AlAsSb coupled double quantum wells

    SciTech Connect

    Gozu, Shin-ichiro; Mozume, Teruo; Ishikawa, Hiroshi

    2013-12-04

    We have studied optical and structural properties of In{sub 0.64}Ga{sub 0.36}As/Al{sub x}Ga{sub 1−x}As(x≤0.2)/AlAsSb coupled double quantum wells (CDQWs) for controlling the interband transition energy of CDQWs as well as changing the residual strain of CDQWs. By changing Al composition of Al{sub x}Ga{sub 1−x}As center barrier, the interband transition energy was successfully controlled due to changing coupling strength between the double quantum wells. Comparing with our previous study, In composition of InGaAs wells was reduced and consequently, residual strain of the CDQWs was also changed.

  4. Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure

    PubMed Central

    2011-01-01

    We have studied the electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure, i.e., with an In0.15Ga0.85As quantum well (QW) as capping layer above InAs quantum dots (QDs), via temperature-dependent photoluminescence, photo-modulated reflectance, and rapid thermal annealing (RTA) treatments. It is shown that the carrier transfer via wetting layer (WL) is impeded according to the results of temperature dependent peak energy and line width variation of both the ground states (GS) and excited states (ES) of QDs. The quenching of integrated intensity is ascribed to the thermal escape of electron from the dots to the complex In0.15Ga0.85As QW + InAs WL structure. Additionally, as the RTA temperature increases, the peak of PL blue shifts and the full width at half maximum shrinks. Especially, the intensity ratio of GS to ES reaches the maximum when the energy difference approaches the energy of one or two LO phonon(s) of InAs bulk material, which could be explained by phonon-enhanced inter-sublevels carrier relaxation in such asymmetric dot-in-well structure. PACS: 73.63.Kv; 73.61.Ey; 78.67.Hc; 81.16.Dn PMID:21711820

  5. Simulation of dark current suppression in p-i-n InGaAs photodetector with In0.66Ga0.34As/InAs superlattice electron barrier

    NASA Astrophysics Data System (ADS)

    Lv, Jiabing; Chen, Jun

    2016-07-01

    An InGaAs-based photodetector with different periods of inserting strain-compensated In0.66Ga0.34As/InAs superlattice (SL) electron barrier in the In0.83Ga0.17As absorption layer has been investigated. The band diagram, electron concentration and electric field intensity of the structure were analyzed with numerical simulation. It was found that the period of SL has a remarkable influence on the properties of the photodetectors. With the decrease of the period of In0.66Ga0.34As/InAs SL, the dark current density is suppressed significantly, which is reduced to 2.46 × 10-3 A/cm2 at 300 K and a reverse bias voltage of 1 V when the period is 2.5 nm.

  6. Bias activated dielectric response of excitons and excitonic Mott transition in quantum confined lasers structures.

    NASA Astrophysics Data System (ADS)

    Bhunia, Amit; Bansal, Kanika; Datta, Shouvik; Alshammari, Marzook S.; Henini, Mohamed

    In contrast to the widely reported optical techniques, there are hardly any investigations on corresponding electrical signatures of condensed matter physics of excitonic phenomena. We studied small signal steady state capacitance response in III-V materials based multi quantum well (AlGaInP) and MBE grown quantum dot (InGaAs) laser diodes to identify signatures of excitonic presence. Conductance activation by forward bias was probed using frequency dependent differential capacitance response (fdC/df), which changes characteristically with the onset of light emission indicating the occurrence of negative activation energy. Our analysis shows that it is connected with a steady state population of exciton like bound states. Calculated average energy of this bound state matches well with the binding energy of weakly confined excitons in this type of structures. Further increase in charge injection decreases the differential capacitive response in AlGaInP based diodes, indicating a gradual Mott transition of excitonic states into electron hole plasma. This electrical description of excitonic Mott transition is fully supplemented by standard optical spectroscopic signatures of band gap renormalization and phase space filling effects.

  7. One-pot synthesis of mesoporous structured ratiometric fluorescence molecularly imprinted sensor for highly sensitive detection of melamine from milk samples.

    PubMed

    Xu, Shoufang; Lu, Hongzhi

    2015-11-15

    A facile strategy was developed to prepare mesoporous structured ratiometric fluorescence molecularly imprinted sensor for highly sensitive and selective determination of melamine using CdTe QDs as target sensitive dye and hematoporphyrin as reference dyes. One-pot synthesis method was employed because it could simplify the imprinting process and shorten the experimental period. The as-prepared fluorescence MIPs sensor, which combined ratiometric fluorescence technique with mesoporous silica materials into one system, exhibited excellent selectivity and sensitivity. Under optimum conditions, these mesoporous structured ratiometric fluorescence MIP@QDs sensors showed detection limit as low as 38 nM, which was much lower than those non-mesoporous one. The recycling process was sustainable at least 10 times without obvious efficiency decrease. The feasibility of the developed method in real samples was successfully evaluated through the analysis of melamine in raw milk and milk powder samples with satisfactory recoveries of 92-101%. The developed method proposed in this work proved to be a convenient, rapid, reliable and practical way to prepared high sensitive and selective fluorescence sensors with potentially applicable for trace pollutants analysis in complicated samples. PMID:26057736

  8. Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

    SciTech Connect

    Kim, Yeongho; Ban, Keun-Yong Honsberg, Christiana B.; Boley, Allison; Smith, David J.

    2015-10-26

    The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d{sub s} = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d{sub s} due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d{sub s} = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d{sub s} due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with d{sub s} = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.

  9. Fabrication of two-color surface emitting device of a coupled vertical cavity structure with InAs quantum dots formed by wafer bonding

    NASA Astrophysics Data System (ADS)

    Ota, Hiroto; Lu, Xiangmeng; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2016-04-01

    We fabricated a two-color surface emitting device of a coupled cavity structure, which is applicable to terahertz light source. GaAs/AlGaAs vertical multilayer cavity structures were grown on (001) and (113)B GaAs substrates and the coupled multilayer cavity structure was fabricated by wafer bonding them. The top cavity contains self-assembled InAs quantum dots (QDs) as optical gain materials for two-color emission of cavity-mode lights. The bonding position was optimized for the equivalent intensity of two-color emission. We formed a current injection structure, and two-color emission was observed by current injection, although no lasing was observed.

  10. Shape effects on the electronic structure and the optical gain of InAsN/GaAs nanostructures: From a quantum lens to a quantum ring

    NASA Astrophysics Data System (ADS)

    Chen, J.; Fan, W. J.; Xu, Q.; Zhang, X. W.; Li, S. S.; Xia, J. B.

    2012-10-01

    The electronic structures of self-assembled InAs1-xNx/GaAs nanostructures from quantum lens to quantum rings (QRs) are calculated using the 10-band k.p method and the valence force field (VFF) method. With the variation of shape of the nanostructure and nitrogen (N) content, it shows that the N and the strains can significantly affect the energy levels especially the conduction band because the N resonant state has repulsion interaction with the conduction band due to the band anticrossing (BAC). The structures with N and greater height have smaller transition energy, and the structures with N have greater optical gain due to its overwhelming greater value of factor f+f-1. After analyzing the shape effect, we suggested that the nanostructures with volcano shape are preferred because the maximum optical gain occurs for quantum volcano. With our simulation result, researchers could select quantum dots (QDs) structures to design laser with better performance.

  11. Density functional calculation of the structural and electronic properties of germanium quantum dots

    SciTech Connect

    Anas, M. M.; Gopir, G.

    2015-04-24

    We apply first principles density functional computational methods to study the structures, densities of states (DOS), and higher occupied molecular orbital (HOMO) – lowest unoccupied molecular orbital (LUMO) gaps of selected free-standing Ge semiconductor quantum dots up to 1.8nm. Our calculations are performed using numerical atomic orbital approach where linear combination of atomic orbital was applied. The surfaces of the quantum dots was passivized by hydrogen atoms. We find that surface passivation does affect the electronic properties associated with the changes of surface state, electron localization, and the energy gaps of germanium nanocrystals as well as the confinement of electrons inside the quantum dots (QDs). Our study shows that the energy gaps of germanium quantum dots decreases with the increasing dot diameter. The size-dependent variations of the computed HOMO-LUMO gaps in our quantum dots model were found to be consistent with the effects of quantum confinement reported in others theoretical and experimental calculation.

  12. Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress

    NASA Astrophysics Data System (ADS)

    Su, Dan; Dou, Xiuming; Wu, Xuefei; Liao, Yongping; Zhou, Pengyu; Ding, Kun; Ni, Haiqiao; Niu, Zhichuan; Zhu, Haijun; Jiang, Desheng; Sun, Baoquan

    2016-04-01

    Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons.

  13. Dwell-time-limited coherence in open quantum dots.

    PubMed

    Hackens, B; Faniel, S; Gustin, C; Wallart, X; Bollaert, S; Cappy, A; Bayot, V

    2005-04-15

    We present measurements of the electron phase coherence time tau(varphi) on a wide range of open ballistic quantum dots (QDs) made from InGaAs heterostructures. The observed saturation of tau(varphi) below temperatures 0.5 KQDs. Combining our results with previous reports on tau(varphi) in GaAs QDs, we provide new insight into the long-standing problem of the saturation of tau(varphi) in these systems: the dwell time becomes the limiting factor for electron interference effects in QDs at low temperature. PMID:15904090

  14. Dwell-Time-Limited Coherence in Open Quantum Dots

    NASA Astrophysics Data System (ADS)

    Hackens, B.; Faniel, S.; Gustin, C.; Wallart, X.; Bollaert, S.; Cappy, A.; Bayot, V.

    2005-04-01

    We present measurements of the electron phase coherence time τϕ on a wide range of open ballistic quantum dots (QDs) made from InGaAs heterostructures. The observed saturation of τϕ below temperatures 0.5 KQDs. Combining our results with previous reports on τϕ in GaAs QDs, we provide new insight into the long-standing problem of the saturation of τϕ in these systems: the dwell time becomes the limiting factor for electron interference effects in QDs at low temperature.

  15. Structure, strain, and composition profiling of InAs/GaAs(211)B quantum dot superlattices

    NASA Astrophysics Data System (ADS)

    Florini, N.; Dimitrakopulos, G. P.; Kioseoglou, J.; Germanis, S.; Katsidis, C.; Hatzopoulos, Z.; Pelekanos, N. T.; Kehagias, Th.

    2016-01-01

    The morphology, nanostructure, and strain properties of InAs quantum dots (QDs) grown on GaAs(211)B, uncapped or buried, are explored by transmission electron microscopy and related quantitative techniques. Besides the built-in piezoelectric field, other differences of (211) growth compared to (100)-oriented growth are discussed in terms of the (211) surface non-singularity, leading to anisotropic shape of the QDs and local chemical inhomogeneity of the wetting layer. The shape of the uncapped QDs was precisely defined as truncated pyramidal, elongated along the <111> direction, and bounded by the {110}, {100}, and {213} facets. Local strain measurements showed that large surface QDs were almost unstrained due to plastic relaxation, exhibiting small residual elastic strain at the interface that gradually diminished toward their apex. Conversely, buried QDs were pseudomorphically grown on GaAs. By postulating a plane stress state, we have established a systematic increase of the local strain from the base toward the apex region of the QDs. Using Vegard's law, their chemical composition profiles were calculated, revealing an indium content gradient along the growth direction and compositional variants among different QDs. Photoluminescence measurements showed variations in emission energy between the QDs and consistency with a graded In-content, which complied with the quantitative strain analysis.

  16. Ultrafast carrier capture in InGaAs quantum posts

    SciTech Connect

    Talbayev, Diyar; Taylor, Antoinette J; Stehr, D; Morris, C M; Wagner, M; Kim, H C; Schneider, H; Petroff, P M; Sherwin, M S

    2009-01-01

    To explore the capture dynamics of photoexcited carriers in semiconductor quantum posts, optical pump - THz probe and time-resolved photoluminescence spectroscopy were performed. The results of the THz experiment show that after ultrafast excitation, electrons relax within a few picoseconds into the quantum posts, which are acting as efficient traps. The saturation of the quantum post states, probed by photoluminescence, was reached approximately at ten times the quantum post density in the samples. The results imply that quantum posts are posts highly attractive nanostructures for future device applications.

  17. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80 K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83 eV to 1.0 eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  18. Phase separation and ordering in InGaAs and InGaAs materials. Final report

    SciTech Connect

    Not Available

    1995-02-23

    This report highlights the advances in the understanding of phase separation and atomic ordering in mixed III-V layers. Specifically, the following issues were addressed in the grant period (August 1987 to February 1992): (1) bulk vs surface phase separation; (2) influence of growth technique on phase separation; (3) origin of coarse contrast modulations; (4) influence of dopant diffusion on phase separated microstructures; (5) influence of annealing on carrier mobility in InGaAsP layers; (6) co-existence of CuPt-type ordering and phase separation; (7) influence of growth conditions on ordering; (8) influence of surface reconstruction on atomic ordering.

  19. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.

    PubMed

    Heiss, Martin; Ketterer, Bernt; Uccelli, Emanuele; Morante, Joan Ramon; Arbiol, Jordi; Fontcuberta i Morral, Anna

    2011-05-13

    Growth of GaAs and In(x)Ga(1-x)As nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO(2) substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550 °C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium achieved by lowering the growth temperature does not have the effect of increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575 °C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit spectrally narrow luminescence. PMID:21430322

  20. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  1. High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure

    NASA Astrophysics Data System (ADS)

    Albrecht, Alexander R.; Rotter, Thomas J.; Hains, Christopher P.; Stintz, Andreas; Xin, Guofeng; Wang, Tsuei-Lian; Kaneda, Yushi; Moloney, Jerome V.; Malloy, Kevin J.; Balakrishnan, Ganesh

    2011-03-01

    We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.

  2. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications

    NASA Astrophysics Data System (ADS)

    Durand, O.; Robert, C.; Nguyen Thanh, T.; Almosni, S.; Quinci, T.; Kuyyalil, J.; Cornet, C.; Létoublon, A.; Levallois, C.; Jancu, J.-M.; Even, J.; Pédesseau, L.; Perrin, M.; Bertru, N.; Sakri, A.; Boudet, N.; Ponchet, A.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Marie, X.; Balocchi, A.; Turban, P.; Tricot, S.; Modreanu, Mircea; Loualiche, S.; Le Corre, A.

    2013-01-01

    Lattice-matched GaP-based nanostructures grown on silicon substrates is a highly rewarded route for coherent integration of photonics and high-efficiency photovoltaic devices onto silicon substrates. We report on the structural and optical properties of selected MBE-grown nanostructures on both GaP substrates and GaP/Si pseudo-substrates. As a first stumbling block, the GaP/Si interface growth has been optimised thanks to a complementary set of thorough structural analyses. Photoluminescence and time-resolved photoluminescence studies of self-assembled (In,Ga)As quantum dots grown on GaP substrate demonstrate a proximity of two different types of optical transitions interpreted as a competition between conduction band states in X and Γ valleys. Structural properties and optical studies of GaAsP(N)/GaP(N) quantum wells coherently grown on GaP substrates and GaP/Si pseudo substrates are reported. Our results are found to be suitable for light emission applications in the datacom segment. Then, possible routes are drawn for larger wavelengths applications, in order to address the chip-to-chip and within-a-chip optical interconnects and the optical telecom segments. Finally, results on GaAsPN/GaP heterostructures and diodes, suitable for PV applications are reported.

  3. Structural and physicochemical aspects of silica encapsulated ZnO quantum dots with high quantum yield and their natural uptake in HeLa cells.

    PubMed

    Depan, D; Misra, R D K

    2014-09-01

    Photoluminescent semiconductor quantum dots (QDs) are of significant interest for bioimaging and fluorescence labeling. In this regard, we describe here the design of high sensitivity and high specificity non-toxic ZnO QDs (∼5 nm) with long-term stability of up to 12 months. The embedding of ZnO QDs on silica nanospheres led to significant increase in photoluminescence intensity rendering them highly bright QD-based probes. The QDs were characterized in vitro with respect to cancer cells (HeLa) and evaluated in terms of viability, fluorescence and cytoskeletal organization. The immobilization of ZnO QDs on silica nanospheres promoted the internalization and enhanced fluorescence emission of HeLa cells. The fluorescence emission from QDs was stable for 3 days, indicating excellent stability toward photobleaching. Cytoskeletal reorganization was observed after internalization of QDs such that the ZnO QDS on silica nanospheres resulted in broadening of the actin cytoskeleton. The study underscores that ZnO QDs immobilized on Si nanospheres are promising for tracking cancer cells in cell therapy. PMID:24115677

  4. Cell Structure

    MedlinePlus

    ... Cells, Tissues, & Membranes Cell Structure & Function Cell Structure Cell Function Body Tissues Epithelial Tissue Connective Tissue Muscle Tissue ... apparatus , and lysosomes . « Previous (Cell Structure & Function) Next (Cell Function) » Contact Us | Privacy Policy | Accessibility | FOIA | File Formats ...

  5. Influence of Photoactive Layer Structure on Device Performance of Poly(2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylene vinylene)-CuInS2/ZnO Solar Cells.

    PubMed

    Yue, Wenjin; Sun, Wenshan; Wang, Songming; Zhang, Guoqiang; Lan, Mingyang; Nie, Guangjun

    2015-06-01

    This paper reported ternary MEH-PPV-CuInS2/ZnO solar cells, which were fabricated with the mixture of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) and CuInS2 quantum dots (QDs) as photovoltaic layer and ZnO nanorod arrays (ZnO-NAs) as electron acceptor. The effects of photoactive layer structure (e.g., the change of spinning rate, thermal annealing temperature, annealing order and annealing method) on device performance are observed, and devices are measured by steady current-voltage (J-V) curve under the monochromic illumination at 470 nm. Results showed that the spinning rate of photoactive layer at 2000 rpm obtained the optimum thickness, moreover, solvent annealing firstly then the deposition of the positive electrode, finally thermal annealing at 140 degrees C contributing to the better reorganization for polymer and CuInS2 QDs to form the more stable phase-segregated state in the photovoltaic layer in the MEH-PPV-CuInS2/ZnO-NAs solar cells, obtaining the maximum power conversion efficiency of 2.54% under the monochromic illumination at 470 nm. PMID:26369059

  6. Correlation of nanoscale structure with electronic and magnetic properties in semiconductor materials

    NASA Astrophysics Data System (ADS)

    He, Li

    , with ferromagnetism/paramagnetism transition temperature in the range of 20-200 K. The magnetic properties of 300-350°C implanted Ge:Mn (which produced crystalline Ge films) varied significantly with implantation dose and annealing condition due to precipitation and phase transformation of MnxGe1-x secondary phase particles, Mn5Ge3, Mn11Ge8 and Mn5Ge2 (zeta). The third part of this work aimed at design of a new experimental method to correlate the structure and energy levels of individual quantum dots (QD) by combining TEM and ballistic electron emission spectroscopy (BEES). A p-type delta doping layer to flatten the QD energy band (otherwise, the Schottky barrier at the BEES metal base/n-type semiconductor interface causes band bending), and an etch-stop layer to prevent etching holes in TEM samples was included in the QD sample structure. TEM analysis found QDs to be of cone shape with the base diameter ranging from about 10 to 50 nm. Preliminary BEES characterization on a sample without QD marks detected a QD energy level 0.12 eV below the In0.5Al0.3Ga0.2P matrix layer conduction band. Micron- and nanometer-scale marks were fabricated by FIB milling and TEM electron beam induced carbon deposition, respectively, to index individual QDs so that TEM and BEES characterization could be performed on the same QDs in the future. Overall, this work explored different semiconductor nanostructures with the broad goal of correlation of nanoscale structure with electronic and magnetic properties. The originality of this research lies in the design and performance of novel experimental methods, and the improved understanding of structure-property relationships at the nanoscale.

  7. Direct Patterning of CdSe Quantum Dots into Sub-100 nm Structures

    SciTech Connect

    Hampton, Meredith J.; Templeton, Joseph L.; DeSimone, Joseph M.

    2010-03-02

    Ordered, two-dimensional cadmium selenide (CdSe) arrays have been fabricated on indium-doped tin oxide (ITO) electrodes using the pattern replication in nonwetting templates (PRINT) process. CdSe quantum dots (QDs) with an average diameter of 2.7 nm and a pyridine surface ligand were used for patterning. The PRINT technique utilizes a perfluoropolyether (PFPE) elastomeric mold that is tolerant of most organic solvents, thus allowing solutions of CdSe QDs in 4-picoline to be used for patterning without significant deformation of the mold. Nanometer-scale diffraction gratings have been successfully replicated with CdSe QDs.

  8. Information Structure and Linguistic Structure.

    ERIC Educational Resources Information Center

    Zierer, Ernesto

    1972-01-01

    This document describes a format for analyzing the information content of sentences and the language patterns that accompany particular information content. The author writes in terms of information structures, each information structure having a corresponding linguistic structure composed of distinctive features. The information structure of a…

  9. Multi-million atom electronic structure calculations for quantum dots

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad

    stark shift, coherent coupling of electronic states in a quantum dot molecule etc.; (3) to assess the potential use of the quantum dots in real device implementation and to provide physical insight to the experimentalists. Full three dimensional strain and electronic structure simulations of quantum dot structures containing multi-million atoms are done using NEMO 3-D. Both single and vertically stacked quantum dot structures are analyzed in detail. The results show that the strain and the piezoelectricity significantly impact the electronic structure of these devices. This work shows that the InAs quantum dots when placed in the InGaAs quantum well red shifts the emission wavelength. Such InAs/GaAs-based optical devices can be used for optical-fiber based communication systems at longer wavelengths (1.3um -- 1.5um). Our atomistic simulations of InAs/InGaAs/GaAs quantum dots quantitatively match with the experiment and give the critical insight of the physics involved in these structures. A single quantum dot molecule is studied for coherent quantum coupling of electronic states under the influence of static electric field applied in the growth direction. Such nanostructures can be used in the implementation of quantum information technologies. A close quantitative match with the experimental optical measurements allowed us to get a physical insight into the complex physics of quantum tunnel couplings of electronic states as the device operation switches between atomic and molecular regimes. Another important aspect is to design the quantum dots for a desired isotropic polarization of the optical emissions. Both single and coupled quantum dots are studied for TE/TM ratio engineering. The atomistic study provides a detailed physical analysis of these computationally expensive large nanostructures and serves as a guide for the experimentalists for the design of the polarization independent devices for the optical communication systems.

  10. Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure

    PubMed Central

    2014-01-01

    Time-dependent pH sensing phenomena of the core-shell CdSe/ZnS quantum dot (QD) sensors in EIS (electrolyte insulator semiconductor) structure have been investigated for the first time. The quantum dots are immobilized by chaperonin GroEL protein, which are observed by both atomic force microscope and scanning electron microscope. The diameter of one QD is approximately 6.5 nm. The QDs are not oxidized over a long time and core-shell CdSe/ZnS are confirmed by X-ray photon spectroscopy. The sensors are studied for sensing of hydrogen ions concentration in different buffer solutions at broad pH range of 2 to 12. The QD sensors show improved sensitivity (38 to 55 mV/pH) as compared to bare SiO2 sensor (36 to 23 mV/pH) with time period of 0 to 24 months, owing to the reduction of defects in the QDs. Therefore, the differential sensitivity of the QD sensors with respect to the bare SiO2 sensors is improved from 2 to 32 mV/pH for the time period of 0 to 24 months. After 24 months, the sensitivity of the QD sensors is close to ideal Nernstian response with good linearity of 99.96%. Stability and repeatability of the QD sensors show low drift (10 mV for 10 cycles) as well as small hysteresis characteristics (<10 mV). This QD sensor is very useful for future human disease diagnostics. PMID:24725352

  11. Classifying structures

    SciTech Connect

    Buslov, V.M.; Krahl, N.W.

    1985-01-01

    61 concepts are categorized and divided by structure type into bottom-mounted, floating, and island structures. They are either permanent systems or moving systems. They are further subdivided and listed in this paper. The structural designs are all distinguished by the consideration of sea ice. Bottom-mounted structures have been built in water depths from 30 to about 500 feet. To date, only a few steel or concrete structures have been built, but a number are being planned. A list of concrete structures now in operation is provided.

  12. An extremely sensitive aptasensor based on interfacial energy transfer between QDS SAMs and GO

    NASA Astrophysics Data System (ADS)

    Sun, Xiangying; Liu, Bin; Yang, Chuanxiao; Li, Congcong

    2014-10-01

    In this work we designed a fluorescent self-assemblied multilayers, with thrombin aptamers and ssDNA as aptamer fixed onto the outermost layer, respectively. This multilayers can effectively sense biomolecules by interfacial florescence resonance energy transfer from multilayers to graphene oxide. High fluorescence quenching efficiency of graphene oxide and self-assemblied membrane' concentration results in good sensitivity for biosensing. A new interfacial sensing method with extremely high sensitivity for thrombin and DNA sequence was established, and the detection limit for thrombin and DNA was 16.2 pM and 72.6 fM, respectively.

  13. An extremely sensitive aptasensor based on interfacial energy transfer between QDS SAMs and GO.

    PubMed

    Sun, Xiangying; Liu, Bin; Yang, Chuanxiao; Li, Congcong

    2014-10-15

    In this work we designed a fluorescent self-assemblied multilayers, with thrombin aptamers and ssDNA as aptamer fixed onto the outermost layer, respectively. This multilayers can effectively sense biomolecules by interfacial florescence resonance energy transfer from multilayers to graphene oxide. High fluorescence quenching efficiency of graphene oxide and self-assemblied membrane' concentration results in good sensitivity for biosensing. A new interfacial sensing method with extremely high sensitivity for thrombin and DNA sequence was established, and the detection limit for thrombin and DNA was 16.2pM and 72.6 fM, respectively. PMID:24835931

  14. Growth of In xGa 1- xAs layers with pyramidal morphology on (1 0 0)GaAs patterned substrates by liquid-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Iida, S.; Balakrishnan, K.; Koyama, T.; Hayakawa, Y.; Kumagawa, M.

    2000-05-01

    Liquid-phase epitaxial growth of In xGa 1- xAs ( x=0.6) layers on various types of patterned (1 0 0)GaAs substrates was investigated. Non-planar InGaAs layer having filled tent-like structure was grown on non-patterned substrate. When the InGaAs was grown on circular-patterned substrate, a non-hollow pyramid structure was obtained. Perfect hollow pyramid structured InGaAs was found to be grown on trench substrates of (1 0 0)GaAs.

  15. Website Structure

    ERIC Educational Resources Information Center

    Jackson, Larry S.

    2009-01-01

    This dissertation reports the results of an exploratory data analysis investigation of the relationship between the structures used for information organization and access and the associated storage structures within state government websites. Extending an earlier claim that hierarchical directory structures are both the preeminent information…

  16. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

    SciTech Connect

    Huang, S.; Kim, S. J.; Pan, X. Q.; Goldman, R. S.

    2014-07-21

    We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

  17. Coilgun structures

    NASA Astrophysics Data System (ADS)

    Andrews, J. A.

    1993-01-01

    Recent research into the optimal design of 'coilgun' structures has indicated that structural requirements are strong functions of launcher classification as well as acceleration mode. Attention is presently given to both closed-form and numerical analytical techniques for coaxial DC accelerator (DCA) structural-design calculations. The DCA is a multistage pulsed-induction launcher that makes extensive use of composite materials technology; measured plastic deformations of the armature after a high energy experiment are compared to FEM analysis predictions.

  18. Aeropropulsion structures

    NASA Technical Reports Server (NTRS)

    Nichols, Lester D.

    1987-01-01

    The structural engineer is faced with unique problems when dealing with aeropropulsion systems. He is faced with extremes in operating temperatures, rotational effects, and behaviors of advanced material systems which combine into complexities that require advances in many scientific disciplines involved in structural analysis and design procedures. This presentation provides an overview of the complexities of aeropropulsion structures and the theoretical, computational, and experimental research conducted to achieve the needed advances.

  19. Optical and Magneto-Optical Studies of Doped III -v Quantum Well Structures.

    NASA Astrophysics Data System (ADS)

    Fisher, Tracey Ann

    1992-01-01

    Tunnelling Structure (DBRTS) in which a strained (InGa)As layer forms a pre-well in the emitter accumulation region. This allows observation of PL from the emitter region as well as from the GaAs QW, sandwiched between the two barriers. Thus providing direct information on the charge distribution of the DBRTS under operation, in good agreement with magneto-transport measurements.

  20. Structural crashworthiness

    SciTech Connect

    Jones, N.; Wierzbicki, T.

    1983-01-01

    Behind the quest for safety in all forms of transport lies a complex technology of which structural crashworthiness forms an important part. This volume contains the work of over twenty experts whose interests range from the fundamental principles of structural collapse to the application of those principles to the design of ships, aircraft, road vehicles, and rail vehicles. The text focuses on the application of analytical and experimental techniques to predict energy dissipation characteristics of thin-walled structures and structural members under quasi-static and dynamic loadings.