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Sample records for intrinsic semiconductors based

  1. Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors

    SciTech Connect

    Lany, S.; Zunger, A.

    2008-01-01

    In III-V and II-VI semiconductors, certain nominally electron-donating impurities do not release electrons but instead form deep electron-traps known as 'DX centers.' While in these compounds, such traps occur only after the introduction of foreign impurity atoms, we find from first-principles calculations that in ternary I-III-VI{sub 2} chalcopyrites like CuInSe{sub 2} and CuGaSe{sub 2}, DX-like centers can develop without the presence of any extrinsic impurities. These intrinsic DX centers are suggested as a cause of the difficulties to maintain high efficiencies in CuInSe{sub 2}-based thin-film solar-cells when the band gap is increased by addition of Ga.

  2. NdN: An intrinsic ferromagnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Anton, E.-M.; McNulty, J. F.; Ruck, B. J.; Suzuki, M.; Mizumaki, M.; Antonov, V. N.; Quilty, J. W.; Strickland, N.; Trodahl, H. J.

    2016-02-01

    The rare-earth nitrides have recently regained attention due to findings that most members of the series are intrinsic ferromagnetic semiconductors, a class of materials that is crucial for the development of spintronics devices. Here we present a study of NdN thin films, with films grown via molecular beam epitaxy. Optical transmission measurements revealed a band gap of about 0.9 eV, while resistivity measurements confirmed semiconducting behavior with a negative temperature coefficient of resistance, though semimetallic behavior could not be ruled out. The room temperature resistivity of 0.6 m Ω cm indicates strong doping by nitrogen vacancies. Magnetization measurements show a ferromagnetic moment of 1.0 ±0.2 μB below the Curie temperature TC of 43 ±1 K, strongly suppressed from the Hund's rules value of 3.27 μB per ion. The ferromagnetic moment is strongly quenched and the TC is enhanced compared to previously studied bulk NdN, and crystal field calculations reveal that the quenched moment is likely due to lattice strain. X-ray magnetic circular dichroism measurements show that the magnetic moment is orbital dominant, placing NdN in the same category as SmN, an intrinsic ferromagnetic semiconductor with an orbital-dominant ferromagnetic moment.

  3. Acoustically induced stark effect for excitons in intrinsic semiconductors.

    PubMed

    Ivanov, A L; Littlewood, P B

    2001-09-24

    A Stark effect for excitons parametrically driven by coherent acoustic phonons is proposed. Our scheme refers to a low-temperature intrinsic semiconductor or semiconductor nanostructure pumped by an acoustic wave (frequency band nu(ac) approximately equal to 1-40 GHz and intensity range I(ac) approximately equal to 10(-2)-10(2) W/cm(2)) and probed by low-intensity light. Tunable optical band gaps, which strongly change the spectral shape of the exciton line, are induced in the polariton spectrum by acoustic pumping. We develop an exactly solvable model of the acoustic Stark effect and apply our results to GaAs driven by bulk or surface acoustic waves. PMID:11580613

  4. Extrinsic photoresponse enhancement under additional intrinsic photoexcitation in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Kounavis, P.

    2016-06-01

    Dual light beam photoresponse experiments are employed to explore the photoresponse under simultaneous extrinsic and intrinsic photoexcitation of organic semiconductors. The photoresponse of a red modulated light extrinsic photoexcitation is found that can be significantly enhanced under an additional blue bias-light intrinsic photoexcitation in two terminal pentacene films on glass substrates. From the frequency resolved photoresponse, it is deduced that the phenomenon of photoresponse enhancement can be attributed to an increase in the extrinsic photogeneration rate of the red modulated light and/or an improvement of the drift velocity of carriers under an additional blue light intrinsic photoexcitation. The possible predominant extrinsic photogeneration mechanism, which can be compatible with the observed dependence of the photoresponse enhancement on the frequency and on the light intensities of the red and blue light excitation, is the singlet exciton dissociation through electron transfer to acceptor-like traps. Moreover, an improvement in the drift velocity of carriers traversing grain boundaries with potential energy barriers, which may be reduced by trapping of minority carriers created from the intrinsic photoexcitation, may partly contribute to the photoresponse enhancement.

  5. Benzodipyrrolidone (BDP)-based polymer semiconductors containing a series of chalcogen atoms: comprehensive investigation of the effect of heteroaromatic blocks on intrinsic semiconducting properties.

    PubMed

    Lee, Kyu Cheol; Park, Won-Tae; Noh, Yong-Young; Yang, Changduk

    2014-04-01

    In order to determine the effects of actual 'chalcogen atoms' on semiconducting properties for application in a variety of optoelectronic devices, a class of donor (D)-acceptor (A) polymer semiconductors, namely PBDP-Fu, PBDP-Th, and PBDP-Se, containing the recently formulated benzodipyrrolidone (BDP) accepting unit and furan (Fu), thiophene (Th), or selenophene (Se) as a donating unit has been synthesized, characterized, and used in an active layer of organic field-effect transistors (OFETs). With the LUMO levels being comparatively consistent for all three polymers (-3.58 to -3.60 eV) due to the dominant BDP contribution to the polymer backbone, the HOMO energies are somewhat sensitive to the structurally distinctive feature of the donor counits used. Utilizing a combination of X-ray diffraction (XRD) and atomic force microscopy (AFM), it is apparent that further crystalline domains occur with edge-on orientation for the polymers (PBDP-Th and PBDP-Se) with relatively heavier chalcogen atoms such as Th and Se, compared with PBDP-Fu which has a rather amorphous nature. Investigation of their OFET performance indicates that all the polymers show well balanced ambipolar operations. The desirable morphological structures of both the PBDP-Th and PBDP-Se result in higher mobilities in OFETs than those of PBDP-Fu. In particular, 200 °C annealed PBDP-Se OFETs results in ambipolarity being mobile for both holes of up to 1.7 × 10(-2) cm(2)/V·s and electrodes of up to 1.9 × 10(-2) cm(2)/V·s. In addition, OFETs with PBDP-Th show nearly equivalent charge carrier mobilities for both holes (μ(h) = 1.2 × 10(-2) cm(2)/V·s) and electrons (μ(e) = 1.1 × 10(-2) cm(2)/V·s). Consequently, we systematically demonstrate how the manipulation of existing heteroaromatics can modulate the electronic properties of conjugated D-A polymers, elucidating structure-property relationships that are desirable for the rational design of next generation materials. PMID:24620709

  6. Intrinsic charge trapping in organic and polymeric semiconductors: a physical chemistry perspective

    SciTech Connect

    Kaake, Loren; Barbara, Paul F.; Zhu, Xiaoyang

    2010-01-12

    We aim to understand the origins of intrinsic charge carrier traps in organic and polymeric semiconductor materials from a physical chemistry perspective. In crystalline organic semiconductors, we point out some of the inadequacies in the description of intrinsic charge traps using language and concepts developed for inorganic semiconductors. In π-conjugated polymeric semiconductors, we suggest the presence of a two-tier electronic energy landscape, a bimodal majority landscape due to two dominant structural motifs and a minority electronic energy landscape from intrinsic charged defects. The bimodal majority electronic energy landscape results from a combination of amorphous domains and microcrystalline or liquid-crystalline domains. The minority tier of the electronic density of states is comprised of deep Coulomb traps embedded in the majority electronic energy landscape. This minority electronic energy landscape may dominate transport properties at low charge carrier densities, such as those expected for organic photovoltaic devices, while the bimodal majority electronic energy landscape becomes significant at high carrier densities, that is, in organic field effect transistors.

  7. New concept to break the intrinsic properties of organic semiconductors for optical sensing applications

    NASA Astrophysics Data System (ADS)

    Choy, Wallace C. H.

    2015-09-01

    As the intrinsic electrostatic limit, space charge limit (SCL) for photocurrent is a universal phenomenon which is fundamental important for organic semiconductors. We will demonstrate SCL breaking by a new plasmonic-electrical concept. As a proof-ofconcept, organic solar cells (OSCs) comprising metallic planar and grating electrodes are studied. Interestingly, although strong plasmonic resonances induce abnormally dense photocarriers around a grating anode, the grating incorporated inverted OSC is exempt from space charge accumulation (limit) and degradation of electrical properties. The plasmonic-electrical concept will open up a new way to manipulate both optical and electrical properties of semiconductor devices simultaneously.

  8. Electronic structure of intrinsic defects in non-stoichiometric amorphous In-Ga-Zn-O semiconductors

    NASA Astrophysics Data System (ADS)

    Han, Woo Hyun; Chang, Kee Joo

    Amorphous oxide semiconductors, such as amorphous In-Ga-Zn-O (a-IGZO), have attracted much attention because of their use as a channel material in thin-film transistors (TFTs). Despite many advantages such as flexibility, transparency, and high electron mobility, a-IGZO based TFTs suffer from defects which cause the instability of threshold voltage under negative bias illumination stress (NBIS) as well as positive bias stress (PBS). Recently, we have proposed that O-vacancy and O-interstitial defects are responsible for the NBIS and PBS instabilities, respectively. In the previous studies, O-related defects were intentionally introduced in stoichiometric a-IGZO. Since the composition ratio is likely to be deviated from the ideal stoichiometry during fabrication, it is important to understand the electronic structure of non-stoichiometric a-IGZO. Here we perform density functional calculations to investigate the electronic structure of O-related defects in various a-IGZO systems with non-stoichiometric chemical compositions, which are generated through melt-and-quench molecular dynamics simulations. We consder both O-abundant and O-deficient samples and discuss the role of intrinsic defects in the device instability.

  9. Intrinsic Perturbation of the Landau Levels in Metals and Semiconductors at Low Temperatures

    NASA Astrophysics Data System (ADS)

    Awobode, Ayodeji

    2009-03-01

    The de Haas--van Alphen effect in non-superconducting metals and semiconductors at very low temperatures is proposed as a test of an intrinsic perturbative term which appears in the Landau equation sequel to the modification of the Pauli equation. Corrections to the frequency (or period) of the de Haas--van Alphen oscillation in metals is calculated and shown to depend on the Fermi energy and the measured anomalous part of the electron magnetic moment. Precision measurement of the magneto-optical properties which arise from the motion of electrons in binary semiconductors placed in a weak magnetic field is also proposed as a means of observing very small changes in the.

  10. Unusual nonlinear current-voltage characteristics of a metal-intrinsic semiconductor-metal barrierless structure

    NASA Astrophysics Data System (ADS)

    Meriuts, A. V.; Gurevich, Yu. G.

    2015-03-01

    A nonlinear model for the electric current in a metal-intrinsic semiconductor-metal structure without potential barriers in contacts is considered using a drift diffusion approach. An analytical solution of the continuity equations and the current-voltage characteristic for various recombination rates in the contacts are obtained. It is shown that the current-voltage characteristics of such a structure exhibit not only linear behavior, corresponding to Ohm's law, but may also possess properties of current-voltage characteristics of the rectifier diode. It is also possible current-voltage characteristics with saturation in both forward and backward directions. Physical model that explains the obtained results is proposed.

  11. Intrinsic delay of permeable base transistor

    SciTech Connect

    Chen, Wenchao; Guo, Jing; So, Franky

    2014-07-28

    Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barrier height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.

  12. Mn-based ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Dietl, Tomasz; Sawicki, Maciej

    2003-07-01

    The present status of research and prospects for device applications of ferromagnetic (diluted magnetic) semiconductors (DMS) is presented. We review the nature of the electronic states and the mechanisms of the carrier-mediated exchange interactions (mean-field Zener model) in p-type Mn-based III-V and II-VI compounds, highlighting a good correspondence of experimental findings and theoretical predictions. An account of the latest progress on the road of increasing the Currie point to above the room temperature is given for both families of compounds. We comment on a possibility of obtaining ferromagnetism in n-type materials, taking (Zn,Mn)O:Al as the example. Concerning technologically important issue of easy axis and domain engineering, we present theoretical predictions and experimental results on the temperature and carrier concentration driven change of magnetic anisotropy in (Ga,Mn)As.

  13. Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu2ZnSnS4

    NASA Astrophysics Data System (ADS)

    Chen, Shiyou; Yang, Ji-Hui; Gong, X. G.; Walsh, Aron; Wei, Su-Huai

    2010-06-01

    Current knowledge of the intrinsic defect properties of Cu2ZnSnS4 (CZTS) is limited, which is hindering further improvement of the performance of CZTS-based solar cells. Here, we have performed first-principles calculations for a series of intrinsic defects and defect complexes in CZTS, from which we have the following observations. (i) It is important to control the elemental chemical potentials during crystal growth to avoid the formation of secondary phases such as ZnS, CuS, and Cu2SnS3 . (ii) The intrinsic p -type conductivity is attributed to the CuZn antisite which has a lower formation energy and relatively deeper acceptor level compared to the Cu vacancy. (iii) The low formation energy of many of the acceptor defects will lead to the intrinsic p -type character, i.e., n -type doping is very difficult in this system. (iv) The role of electrically neutral defect complexes is predicted to be important, because they have remarkably low formation energies and electronically passivate deep levels in the band gap. For example, [CuZn-+ZnCu+] , [VCu-+ZnCu+] , and [ZnSn2-+2ZnCu+] may form easily in nonstoichiometric samples. The band alignment between Cu2ZnSnS4 , CuInSe2 and the solar-cell window layer CdS has also been calculated, revealing that a type-II band alignment exists for the CdS/Cu2ZnSnS4 heterojunction. The fundamental differences between CZTS and CuInSe2 for use in thin-film photovoltaics are discussed. The results are expected to be relevant to other I2-II-IV-VI4 semiconductors.

  14. Photogenerated Intrinsic Free Carriers in Small-molecule Organic Semiconductors Visualized by Ultrafast Spectroscopy

    PubMed Central

    He, Xiaochuan; Zhu, Gangbei; Yang, Jianbing; Chang, Hao; Meng, Qingyu; Zhao, Hongwu; Zhou, Xin; Yue, Shuai; Wang, Zhuan; Shi, Jinan; Gu, Lin; Yan, Donghang; Weng, Yuxiang

    2015-01-01

    Confirmation of direct photogeneration of intrinsic delocalized free carriers in small-molecule organic semiconductors has been a long-sought but unsolved issue, which is of fundamental significance to its application in photo-electric devices. Although the excitonic description of photoexcitation in these materials has been widely accepted, this concept is challenged by recently reported phenomena. Here we report observation of direct delocalized free carrier generation upon interband photoexcitation in highly crystalline zinc phthalocyanine films prepared by the weak epitaxy growth method using ultrafast spectroscopy. Transient absorption spectra spanning the visible to mid-infrared region revealed the existence of short-lived free electrons and holes with a diffusion length estimated to cross at least 11 molecules along the π−π stacking direction that subsequently localize to form charge transfer excitons. The interband transition was evidenced by ultraviolet-visible absorption, photoluminescence and electroluminescence spectroscopy. Our results suggest that delocalized free carriers photogeneration can also be achieved in organic semiconductors when the molecules are packed properly. PMID:26611323

  15. Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

    SciTech Connect

    Morozovska, A. N.; Eliseev, E. A.; Svechnikov, S. V.; Shur, V.Y.; Borisevich, Albina Y; Maksymovych, Petro; Kalinin, Sergei V

    2010-01-01

    Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the electric field of the nanosized tip of the Scanning Probe Microscope) the thickness and charge of the interface layer drastically changes, in particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.

  16. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  17. Intrinsic carrier effects in HfO2-Ge metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Dimoulas, A.; Vellianitis, G.; Mavrou, G.; Evangelou, E. K.; Sotiropoulos, A.

    2005-05-01

    Germanium metal-insulator-semiconductor capacitors with HfO2 or other high-κ gate dielectrics show unusual low frequency behavior of the high frequency (1 kHz or higher) capacitance-voltage characteristics when biased in inversion. Here, we provide evidence that this effect is partly due to the high intrinsic carrier concentration ni in Ge. We show in particular that the ac conductance in inversion is thermally activated and it is governed either by generation-recombination processes in depletion, varying proportional to ni or by diffusion-limited processes varying as ni2, depending on whether the temperature is below or above 45 °C, respectively. From these measurements, we also show that the minority carrier response time in Ge is very short, in the microsecond range (much shorter than in Si), depending inversely proportional to ni at room temperature. This means that due to high ni, the inversion charge is built fast in response to high frequency signals at the gate, inducing the observed low frequency behavior.

  18. Quantum random number generator based on photonic emission in semiconductors.

    PubMed

    Stipcević, M; Rogina, B Medved

    2007-04-01

    We report upon the realization of a novel fast nondeterministic random number generator whose randomness relies on the intrinsic randomness of the quantum physical processes of photonic emission in semiconductors and subsequent detection by the photoelectric effect. Timing information of detected photons is used to generate binary random digits-bits. The bit extraction method based on the restartable clock method theoretically eliminates both bias and autocorrelation while reaching efficiency of almost 0.5 bits per random event. A prototype has been built and statistically tested. PMID:17477690

  19. Metal-free ferromagnetic metal and intrinsic spin semiconductor: two different kinds of SWCNT functionalized BN nanoribbons.

    PubMed

    Lou, Ping

    2015-03-28

    Two different kinds of SWCNT functionalized zigzag edge BN nanoribbons with n chains (n-ZBNNRs), namely, (a) B-edge functionalized by (m,m)SWCNT and N-edge modified with H (nZBNNR-B-(m,m)SWCNTs); and (b) the B-edge modified with H and the N-edge functionalized by (m,m)SWCNT (nZBNNR-N-(m,m)SWCNTs), have been predicted. Amazingly, we find that unlike the semiconducting and nonmagnetic H-modified n-ZBNNRs, the nZBNNR-B-(m,m)SWCNTs are intrinsic ferromagnetic metals, regardless of ribbon widths n and tube diameters (m,m). At a given (m,m), their local magnetic moments, at first, exhibit oscillation with increasing n, whereas when n is larger than 5, they are independent of n. In contrast, unlike the metallic and nonmagnetic (m,m)SWCNTs, the nZBNNR-N-(m,m)SWCNTs are ferromagnetic intrinsic spin-semiconductors with direct band gaps, regardless of n and (m,m). Their local magnetic moments and band gaps are independent of n and (m,m). The DFT calculations reveal that the process of SWCNT functionalization of the n-ZBNNRs does not need any activation energy. Moreover, the formation energies of the SWCNT functionalized n-ZBNNRs are always less than zero. Therefore, the SWCNT functionalized n-ZBNNRs are not only stable, but can also be spontaneously formed. Furthermore, compared with n-ZBNNRs, the SWCNT functionalized n-ZBNNRs show significant improvements in their thermal and mechanical stabilities. Thus, (m,m)SWCNT functionalization of n-ZBNNRs may open new routes toward practical nanoelectronic and optoelectronic as well as spintronic devices based on BNC-based materials. PMID:25721493

  20. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  1. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.

    PubMed

    Lee, Hee Sung; Baik, Seung Su; Lee, Kimoon; Min, Sung-Wook; Jeon, Pyo Jin; Kim, Jin Sung; Choi, Kyujin; Choi, Hyoung Joon; Kim, Jae Hoon; Im, Seongil

    2015-08-25

    Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS2 MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) using NiOx Schottky electrode which makes van der Waals interface with MoS2. We thus expect that the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by interface traps or an on-state gate field. Our MESFETs with a few and ∼10 layer MoS2 demonstrate intrinsic-like high mobilities of 500-1200 cm(2)/(V s) at a certain low threshold voltage between -1 and -2 V without much hysteresis. Moreover, they work as a high speed and highly sensitive phototransistor with 2 ms switching and ∼5000 A/W, respectively, supporting their high intrinsic mobility results. PMID:26169189

  2. Transport phenomena in intrinsic semiconductors and insulators at high current densities: Suppression of the broken neutrality drift

    SciTech Connect

    Mnatsakanov, T. T.; Tandoev, A. G.; Yurkov, S. N.; Levinshtein, M. E.

    2013-08-14

    It is shown that, in addition to the diffusion and broken neutrality drift (BND) modes well-known for insulators and very lightly doped semiconductors, the quasineutral drift (QND) mode is possible. The transition from the BND to QND mode is accompanied by the appearance of a portion with a very sharp current rise in the current-voltage characteristic. This effect is observed in a new type of semiconductor detectors (CIDs, Current Injected Detectors) of high-intensity neutron and proton radiation, suggested, in particular, for Large Hadron Collider. The effect is unambiguously attributed now to the presence of radiation-induced deep centers in a semiconductor. It is shown, however, in this paper that the effect of a very sharp rise in current upon a slight increase in voltage is even possible when there are no deep centers. An equation adequately describing the possible transport modes in intrinsic semiconductors and insulators is derived. The results of an analytical study are confirmed by an adequate simulation.

  3. Transport phenomena in intrinsic semiconductors and insulators at high current densities: Suppression of the broken neutrality drift

    NASA Astrophysics Data System (ADS)

    Mnatsakanov, T. T.; Levinshtein, M. E.; Tandoev, A. G.; Yurkov, S. N.

    2013-08-01

    It is shown that, in addition to the diffusion and broken neutrality drift (BND) modes well-known for insulators and very lightly doped semiconductors, the quasineutral drift (QND) mode is possible. The transition from the BND to QND mode is accompanied by the appearance of a portion with a very sharp current rise in the current-voltage characteristic. This effect is observed in a new type of semiconductor detectors (CIDs, Current Injected Detectors) of high-intensity neutron and proton radiation, suggested, in particular, for Large Hadron Collider. The effect is unambiguously attributed now to the presence of radiation-induced deep centers in a semiconductor. It is shown, however, in this paper that the effect of a very sharp rise in current upon a slight increase in voltage is even possible when there are no deep centers. An equation adequately describing the possible transport modes in intrinsic semiconductors and insulators is derived. The results of an analytical study are confirmed by an adequate simulation.

  4. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    NASA Astrophysics Data System (ADS)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS-based

  5. Spin-based logic in semiconductors for reconfigurable large-scale circuits

    NASA Astrophysics Data System (ADS)

    Dery, H.; Dalal, P.; Cywiński, Ł.; Sham, L. J.

    2007-05-01

    Research in semiconductor spintronics aims to extend the scope of conventional electronics by using the spin degree of freedom of an electron in addition to its charge. Significant scientific advances in this area have been reported, such as the development of diluted ferromagnetic semiconductors, spin injection into semiconductors from ferromagnetic metals and discoveries of new physical phenomena involving electron spin. Yet no viable means of developing spintronics in semiconductors has been presented. Here we report a theoretical design that is a conceptual step forward-spin accumulation is used as the basis of a semiconductor computer circuit. Although the giant magnetoresistance effect in metals has already been commercially exploited, it does not extend to semiconductor/ferromagnet systems, because the effect is too weak for logic operations. We overcome this obstacle by using spin accumulation rather than spin flow. The basic element in our design is a logic gate that consists of a semiconductor structure with multiple magnetic contacts; this serves to perform fast and reprogrammable logic operations in a noisy, room-temperature environment. We then introduce a method to interconnect a large number of these gates to form a `spin computer'. As the shrinking of conventional complementary metal-oxide-semiconductor (CMOS) transistors reaches its intrinsic limit, greater computational capability will mean an increase in both circuit area and power dissipation. Our spin-based approach may provide wide margins for further scaling and also greater computational capability per gate.

  6. Intrinsic feature-based pose measurement for imaging motion compensation

    SciTech Connect

    Baba, Justin S.; Goddard, Jr., James Samuel

    2014-08-19

    Systems and methods for generating motion corrected tomographic images are provided. A method includes obtaining first images of a region of interest (ROI) to be imaged and associated with a first time, where the first images are associated with different positions and orientations with respect to the ROI. The method also includes defining an active region in the each of the first images and selecting intrinsic features in each of the first images based on the active region. Second, identifying a portion of the intrinsic features temporally and spatially matching intrinsic features in corresponding ones of second images of the ROI associated with a second time prior to the first time and computing three-dimensional (3D) coordinates for the portion of the intrinsic features. Finally, the method includes computing a relative pose for the first images based on the 3D coordinates.

  7. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  8. Teacher and Student Intrinsic Motivation in Project-Based Learning

    ERIC Educational Resources Information Center

    Lam, Shui-fong; Cheng, Rebecca Wing-yi; Ma, William Y. K.

    2009-01-01

    In this study we examined the relationship between teacher and student intrinsic motivation in project-based learning. The participants were 126 Hong Kong secondary school teachers and their 631 students who completed evaluation questionnaires after a semester-long project-based learning program. Both teachers and students were asked to indicate…

  9. Optical switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, Robert F.; Dias, Antonio R.; Chau, Kelvin K.; Goodman, Joseph W.

    1991-12-01

    Fiber-optic switching systems typically exhibit large losses associated with splitting and combining of the optical power, and with excess component losses. These losses increase quickly with switch size. To obtain acceptable signal-to-noise performance through large optical switching, optical amplifiers can be used. In applications requiring optical switching, semiconductor optical amplifiers (SOAs) are preferred over erbium-doped fiber amplifiers due to their fast switching speeds and the possibility of their integration in monolithic structures with passive waveguides and electronics. We present a general analysis of optical switching systems utilizing SOAs. These systems, in which the gain provided by SOAs is distributed throughout the optical system, are referred to as distributed optical gain (DOG) systems. Our model predicts the performance and achievable sizes of switches based on the matrix-vector multiplier crossbar and Benes network. It is found that for realistic SOA parameters optical switches accommodating extremely large numbers of nodes are, in principle, achievable.

  10. Semiconductor-Nanowire-Based Superconducting Qubit.

    PubMed

    Larsen, T W; Petersson, K D; Kuemmeth, F; Jespersen, T S; Krogstrup, P; Nygård, J; Marcus, C M

    2015-09-18

    We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (~0.8 μs) and dephasing times (~1 μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information. PMID:26431009

  11. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

    NASA Astrophysics Data System (ADS)

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-10-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs.

  12. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

    PubMed Central

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-01-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs. PMID:25328156

  13. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices.

    PubMed

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-01-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs. PMID:25328156

  14. Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor

    NASA Astrophysics Data System (ADS)

    Seyidov, MirHasan Yu.; Mikailzade, Faik A.; Uzun, Talip; Odrinsky, Andrei P.; Yakar, Emin; Aliyeva, Vafa B.; Babayev, Sardar S.; Mammadov, Tofig G.

    2016-02-01

    Unusual behavior of pyroelectric current signal polarity near the Curie point (Tc) was observed for TlGaSe2 a ferroelectric-semiconductor. It has been revealed that the polarity of the spontaneous polarization near Tc depends on the sample poling prehistory. In particular, applying an external electric field only in the temperature range of the paraelectric state during cooling regime in darkness brought to the depolarization current at Tc with the sign opposite to the external field polarity. Otherwise, if the sample was poled in the temperature interval of the incommensurate phase, pyroelectric current exhibits a peak at Tc with the polarity that is the same as for the external poling electric field. These observations indicate that internal electric field is present in the bulk and near-surface layer regions of the electrically poled single crystal TlGaSe2. Possible mechanisms and origins responsible for the internal electric fields in TlGaSe2 are discussed. It is shown that the formation of internal electric fields in TlGaSe2 is due to charging of intrinsic native defects during the poling process. Characteristics of electrically active intrinsic defects in TlGaSe2 were investigated by using of Photo-Induced Current Transient Spectroscopy (PICTS) technique. Six deep defect levels in the band gap of TlGaSe2 were determined, which were localized both in the bulk and on the surface of the sample and could be electrically charged. The correlation between polarization effects and PICTS results has been established. It was shown that native deep defects (A3-A6) localized in the bulk of crystal are responsible for hetero-charge formation and negative sign of the pyroelectric current peak observed around the Curie temperature after poling the sample in the temperature intervals well above Tc. It was also shown that the positive sign pyrocurrent observed near the Curie point is attributed to the homo-charge formed by native A2-trapping centers which are localized near

  15. The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction

    NASA Astrophysics Data System (ADS)

    Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Kao, S.-C.

    2012-05-01

    Based on the stress extraction and measurement by atomic force microscope-Raman technique with the nanometer level space resolution, the high compressive stress about 550 MPa on the Si active region (OD) is observed for the current complementary metal-oxide-semiconductor (CMOS) transistor. During the thermal budget for the standard manufacture process of the current CMOS transistor, the difference of thermal expansion coefficients between Si and Shallow Trench Isolation (STI) oxide results in this high compressive stress in Si OD and further degrades the electron carrier mobility seriously. In order to relax this intrinsic processed compressive stress in Si OD and try to recover this performance loss, the novel process is proposed in this work in addition to the usage of one-side pad SiN layer. With this novel process of additional N-ion implantation (IMP) treatment in STI oxide, it can be found that the less compressive stress about 438 MPa in Si OD can be achieved by the smaller difference of thermal expansion coefficients between Si and N-doped SiO2 STI oxide. The formation of Si-N bonding in N-doped SiO2 STI region can be monitored by Fourier transform infrared spectroscopy spectra and thermal expansion coefficients for Si, SiO2, and SiN are 2.6 ppm/K, 0.4 ppm/K, and 2.87 ppm/K, respectively. The effective relaxation of intrinsic processed compressive stress in Si OD about 112 MPa (from 550 MPa to 438 MPa) by this proposed additional N IMP treatment contributes ˜14% electron carrier mobility enhancement/recovery. The experimental electrical data agree well with the theoretical piezoelectricity calculation for the strained-Si theory.

  16. Incremental learning of skill collections based on intrinsic motivation

    PubMed Central

    Metzen, Jan H.; Kirchner, Frank

    2013-01-01

    Life-long learning of reusable, versatile skills is a key prerequisite for embodied agents that act in a complex, dynamic environment and are faced with different tasks over their lifetime. We address the question of how an agent can learn useful skills efficiently during a developmental period, i.e., when no task is imposed on him and no external reward signal is provided. Learning of skills in a developmental period needs to be incremental and self-motivated. We propose a new incremental, task-independent skill discovery approach that is suited for continuous domains. Furthermore, the agent learns specific skills based on intrinsic motivation mechanisms that determine on which skills learning is focused at a given point in time. We evaluate the approach in a reinforcement learning setup in two continuous domains with complex dynamics. We show that an intrinsically motivated, skill learning agent outperforms an agent which learns task solutions from scratch. Furthermore, we compare different intrinsic motivation mechanisms and how efficiently they make use of the agent's developmental period. PMID:23898265

  17. All-semiconductor metamaterial-based optical circuit board at the microscale

    SciTech Connect

    Min, Li; Huang, Lirong

    2015-07-07

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  18. Changing the Environment Based on Empowerment as Intrinsic Motivation

    NASA Astrophysics Data System (ADS)

    Salge, Christoph; Glackin, Cornelius; Polani, Daniel

    2014-05-01

    One aspect of intelligence is the ability to restructure your own environment so that the world you live in becomes more beneficial to you. In this paper we investigate how the information-theoretic measure of agent empowerment can provide a task-independent, intrinsic motivation to restructure the world. We show how changes in embodiment and in the environment change the resulting behaviour of the agent and the artefacts left in the world. For this purpose, we introduce an approximation of the established empowerment formalism based on sparse sampling, which is simpler and significantly faster to compute for deterministic dynamics. Sparse sampling also introduces a degree of randomness into the decision making process, which turns out to beneficial for some cases. We then utilize the measure to generate agent behaviour for different agent embodiments in a Minecraft-inspired three dimensional block world. The paradigmatic results demonstrate that empowerment can be used as a suitable generic intrinsic motivation to not only generate actions in given static environments, as shown in the past, but also to modify existing environmental conditions. In doing so, the emerging strategies to modify an agent's environment turn out to be meaningful to the specific agent capabilities, i.e., de facto to its embodiment.

  19. Quantitative proteome-based guidelines for intrinsic disorder characterization.

    PubMed

    Vincent, Michael; Whidden, Mark; Schnell, Santiago

    2016-06-01

    Intrinsically disordered proteins fail to adopt a stable three-dimensional structure under physiological conditions. It is now understood that many disordered proteins are not dysfunctional, but instead engage in numerous cellular processes, including signaling and regulation. Disorder characterization from amino acid sequence relies on computational disorder prediction algorithms. While numerous large-scale investigations of disorder have been performed using these algorithms, and have offered valuable insight regarding the prevalence of protein disorder in many organisms, critical proteome-based descriptive statistical guidelines that would enable the objective assessment of intrinsic disorder in a protein of interest remain to be established. Here we present a quantitative characterization of numerous disorder features using a rigorous non-parametric statistical approach, providing expected values and percentile cutoffs for each feature in ten eukaryotic proteomes. Our estimates utilize multiple ab initio disorder prediction algorithms grounded on physicochemical principles. Furthermore, we present novel threshold values, specific to both the prediction algorithms and the proteomes, defining the longest primary sequence length in which the significance of a continuous disordered region can be evaluated on the basis of length alone. The guidelines presented here are intended to improve the interpretation of disorder content and continuous disorder predictions from the proteomic point of view. PMID:27085142

  20. Ag-based semiconductor photocatalysts in environmental purification

    NASA Astrophysics Data System (ADS)

    Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; zhu, Lihua; Xie, Yu

    2015-12-01

    Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO2, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag-based semiconductor could produce high efficient composite photocatalyts.

  1. Future of Semiconductor Based Thermal Neutron Detectors

    SciTech Connect

    Nikolic, R J; Cheung, C L; Reinhardt, C E; Wang, T F

    2006-02-22

    Thermal neutron detectors have seen only incremental improvements over the last decades. In this paper we overview the current technology of choice for thermal neutron detection--{sup 3}He tubes, which suffer from, moderate to poor fieldability, and low absolute efficiency. The need for improved neutron detection is evident due to this technology gap and the fact that neutrons are a highly specific indicator of fissile material. Recognizing this need, we propose to exploit recent advances in microfabrication technology for building the next generation of semiconductor thermal neutron detectors for national security requirements, for applications requiring excellent fieldability of small devices. We have developed an innovative pathway taking advantage of advanced processing and fabrication technology to produce the proposed device. The crucial advantage of our Pillar Detector is that it can simultaneously meet the requirements of high efficiency and fieldability in the optimized configuration, the detector efficiency could be higher than 70%.

  2. Semiconductor-based DNA sequencing of histone modification states

    PubMed Central

    Cheng, Christine S.; Rai, Kunal; Garber, Manuel; Hollinger, Andrew; Robbins, Dana; Anderson, Scott; Macbeth, Alyssa; Tzou, Austin; Carneiro, Mauricio O.; Raychowdhury, Raktima; Russ, Carsten; Hacohen, Nir; Gershenwald, Jeffrey E.; Lennon, Niall; Nusbaum, Chad; Chin, Lynda; Regev, Aviv; Amit, Ido

    2013-01-01

    The recent development of a semiconductor-based, non-optical DNA sequencing technology promises scalable, low-cost and rapid sequence data production. The technology has previously been applied mainly to genomic sequencing and targeted re-sequencing. Here we demonstrate the utility of Ion Torrent semiconductor-based sequencing for sensitive, efficient and rapid chromatin immunoprecipitation followed by sequencing (ChIP-seq) through the application of sample preparation methods that are optimized for ChIP-seq on the Ion Torrent platform. We leverage this method for epigenetic profiling of tumour tissues. PMID:24157732

  3. Semiconductor-based DNA sequencing of histone modification states.

    PubMed

    Cheng, Christine S; Rai, Kunal; Garber, Manuel; Hollinger, Andrew; Robbins, Dana; Anderson, Scott; Macbeth, Alyssa; Tzou, Austin; Carneiro, Mauricio O; Raychowdhury, Raktima; Russ, Carsten; Hacohen, Nir; Gershenwald, Jeffrey E; Lennon, Niall; Nusbaum, Chad; Chin, Lynda; Regev, Aviv; Amit, Ido

    2013-01-01

    The recent development of a semiconductor-based, non-optical DNA sequencing technology promises scalable, low-cost and rapid sequence data production. The technology has previously been applied mainly to genomic sequencing and targeted re-sequencing. Here we demonstrate the utility of Ion Torrent semiconductor-based sequencing for sensitive, efficient and rapid chromatin immunoprecipitation followed by sequencing (ChIP-seq) through the application of sample preparation methods that are optimized for ChIP-seq on the Ion Torrent platform. We leverage this method for epigenetic profiling of tumour tissues. PMID:24157732

  4. Key techniques for space-based solar pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  5. Anisotropy-based crystalline oxide-on-semiconductor material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

  6. Ring resonator based narrow-linewidth semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Ksendzov, Alexander (Inventor)

    2005-01-01

    The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

  7. Space-division optical switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, Robert F.; Kazovsky, Leonid G.; Goodman, Joseph W.

    Benes and distributed gain matrix-vector multiplier (MVM) switches larger than 10 exp 10 x 10 exp can, in principle, be achieved by using semiconductor optical amplifiers (SOA's). In contrast, lumped gain SOA-based MVM switches are limited in size to less than 100 x 100.

  8. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  9. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response. PMID:27295453

  10. Thin-film transistors based on organic conjugated semiconductors

    NASA Astrophysics Data System (ADS)

    Garnier, Francis

    1998-02-01

    The use of organic semiconductors as active layers in thin-film transistors has raised in the recent years a large interest, both for the fundamental understanding of the charge transport processes in organic materials, and also for the potential applications of these devices in the new field of flexible electronics. Short conjugated oligomers have been shown to possess much higher field-effect mobilities than their parent conjugated polymers. The origin of such increase in the efficiency of charge transport is mainly attributed to the close-packing and long-range structural organization displayed in thin films of conjugated oligomers. The various routes for controlling this organization are described, which allow to realize liquid crystal-like two-dimensional structures for these semiconductors, whose carrier mobility has now become equivalent to that of amorphous silicon. It is also shown that the effect of conjugation length on carrier mobility is not as critical as previously thought, but the associated increase of the band gap energy effects the efficiency of charge injection at the metal/semiconductor interface. This problem can be answered by realizing a local doping of the semiconductor, which allows the injection of charge to operate through an efficient tunneling mechanism. Organic-based thin-film transistors have now become viable devices.

  11. Study of the new diluted magnetic semiconductors based on the doping of iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Feng, Shan; Li, Linxian; Wang, Shaolei; Li, Yuke

    Diluted magnetic semiconductors(DMSs) have attracted increasing attention because of their potential applications in spintronics. Recently, a series of new bulk DMS materialswere synthesized by doping in the 122 and 1111 phases of iron-based superconductors(Fe-SC), which sheds light on the DMS research[3]. In this report, we have synthesized two systems of 1111 phases of DMSs based on Fe-SC materials (La1-xSrx) (Ag0.925 Mn0.075) SO(x =0, 0.025, 0.05, 0.075 and 0.1) and (Y1-xSrx) (Cu0.925 Mn0.075) SO (x =0, 0.025, 0.05,0.075 and 0.1) by solid state method. The structure and electrical, magnetic and optical properties have been investigated by means of XRD, 4KCCS, MPMS, PL, UV-Vis and Raman technique, respectively. Some interesting phenomena are found (Such as the Curie temperature Tc and band-gap energy Eg change regularly with the dopants additon). The results are helpful to clarify the intrinsic mechanism of the DMSs, and will provide new insights on the fabrication and application of devices based on these materials. This work was supported by the National Science Foundation of China (Grant No 61376094). Li Zhang would like to acknowledge a scholarship Granted by China Scholarship Council (CSC-201408330028)

  12. Study of the new diluted magnetic semiconductors based on the doping of iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Feng, Shan; Li, Linxian; Wang, Shaolei; Lu, Bin; Li, Yuke

    2015-03-01

    Diluted magnetic semiconductors(DMSs) have attracted increasing attention because of their potential applications in spintronics. Recently, a series of new bulk DMS materialswere synthesized by doping in the 122 and 1111 phases of iron-based superconductors(Fe-SC), which sheds light on the DMS research. In this report, we have synthesized two systems of 1111 phases of DMSs based on Fe-SC materials (La1 - xSrx) (Ag0.925 Mn0.075)SO(x=0, 0.025, 0.05, 0.075 and 0.1) and (Y1 - xSrx) (Cu0.925 Mn0.075) SO (x=0, 0.025, 0.05,0.075 and 0.1) by solid state method. The structure and electrical, magnetic and optical properties have been investigated by means of XRD, 4KCCS, MPMS, PL, UV-Vis and Raman technique, respectively. Some interesting phenomena are found (Such as the Curie temperature Tc and band-gap energy Eg change regularly with the dopants additon). The results are helpful to clarify the intrinsic mechanism of the DMSs, and will provide new insights on the fabrication and application of devices based on these materials. This work was supported by the National Science Foundation of China (Grant No. 61376094). Li Zhang would like to acknowledge a scholarship granted by China Scholarship Council (CSC-201408330028).

  13. Method of plasma etching Ga-based compound semiconductors

    SciTech Connect

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  14. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    PubMed

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices. PMID:25517922

  15. Thermoelectric properties of zinc based pnictide semiconductors

    NASA Astrophysics Data System (ADS)

    Sreeparvathy, P. C.; Kanchana, V.; Vaitheeswaran, G.

    2016-02-01

    We report a detailed first principles density functional calculations to understand the electronic structure and transport properties of Zn-based pnictides ZnXPn2 (X: Si, Ge, and Sn; Pn: P and As) and ZnSiSb2. The electronic properties calculated using Tran-Blaha modified Becke-Johnson functional reveals the semi-conducting nature, and the resulting band gaps are in good agreement with experimental and other theoretical reports. We find a mixture of heavy and light bands in the band structure which is an advantage for good thermoelectric (TE) properties. The calculated transport properties unveils the favour p-type conduction in ZnXP2 (X: Si, Ge, and Sn) and n-type conduction in ZnGeP2 and ZnSiAs2. Comparison of transport properties of Zn-based pnictides with the prototype chalcopyrite thermoelectric materials implies that the thermopower values of the investigated compounds to be higher when compared with the prototype chalcopyrite thermoelectric materials, together with the comparable values for electrical conductivity scaled by relaxation time. In addition to this, Zn-based pnictides are found to possess higher thermopower than well known traditional TE materials at room temperature and above which motivates further research in these compounds.

  16. Semiconductor-Nanocrystals-Based White Light-Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z.

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  17. Semiconductor Nanocrystals-Based White Light Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Hu, Michael Z.; Duty, Chad E

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

  18. Method of plasma etching GA-based compound semiconductors

    SciTech Connect

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  19. Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Yang, Yunxiang; Du, Gang; Han, Ruqi; Liu, Xiaoyan

    2011-04-01

    The effects of intrinsic parameter fluctuations, including line-edge-roughness (LER), silicon-body thickness variation (STV) and work-function variation (WFV), in 20-nm-gate variable-γ silicon-on-thin-box (SOTB) metal oxide semiconductor field effect transistors (MOSFETs) have been investigated and compared with those of the conventional SOTB. Results show that the variable-γ SOTB offers not only an enhanced Ion but also a reduced Ion fluctuation with a small increase in the active-state Ioff fluctuation. The Vth-roll-off value in the variable-γ SOTB can be reduced by adopting a reverse-biased side gate to optimize the short channel effect, but the variability of the DIBL effect is enlarged. It is expected that a thinner silicon body can be used to reduce the dominant variability sources.

  20. Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)

    PubMed Central

    2012-01-01

    Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal–semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors, the MESFET-based photodetector can make a balance among overall performance parameters, which is desired for practical device applications. We also present our recent work on graphene nanoribbon/semiconductor NW (SNW) heterojunction light-emitting diodes (LEDs). Herein, by taking advantage of both graphene and SNWs, we have fabricated, for the first time, the graphene-based nano-LEDs. This achievement opens a new avenue for developing graphene-based nano-electroluminescence devices. Moreover, the novel graphene/SNW hybrid devices can also find use in other applications, such as high-sensitivity sensor and transparent flexible devices in the future. PMID:22501032

  1. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    DOEpatents

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  2. Intrinsic spin and momentum relaxation in organic single-crystalline semiconductors probed by ESR and Hall measurements

    NASA Astrophysics Data System (ADS)

    Tsurumi, Junto; Häusermann, Roger; Watanabe, Shun; Mitsui, Chikahiko; Okamoto, Toshihiro; Matsui, Hiroyuki; Takeya, Jun

    Spin and charge momentum relaxation mechanism has been argued among organic semiconductors with various methods, devices, and materials. However, little is known in organic single-crystalline semiconductors because it has been hard to obtain an ideal organic crystal with an excellent crystallinity and controllability required for accurate measurements. By using more than 1-inch sized single crystals which are fabricated via contentious edge-casting method developed by our group, we have successfully demonstrated a simultaneous determination of spin and momentum relaxation time for gate-induced charges of 3,11-didecyldinaphtho[2,3- d:2',3'- d']benzo[1,2- b:4,5- b']dithiophene, by combining electron spin resonance (ESR) and Hall effect measurements. The obtained temperature dependences of spin and momentum relaxation times are in good agreement in terms of power law with a factor of approximately -2. It is concluded that Elliott-Yafet spin relaxation mechanism can be dominant at room temperature regime (200 - 300 K). Probing characteristic time scales such as spin-lattice, spin-spin, and momentum relaxation times, demonstrated in the present work, would be a powerful tool to elucidate fundamental spin and charge transport mechanisms. We acknowledge the New Energy and Industrial Technology Developing Organization (NEDO) for financial support.

  3. Optically induced transport through semiconductor-based molecular electronics

    NASA Astrophysics Data System (ADS)

    Li, Guangqi; Fainberg, Boris D.; Seideman, Tamar

    2015-04-01

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  4. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  5. Progress in ion torrent semiconductor chip based sequencing.

    PubMed

    Merriman, Barry; Rothberg, Jonathan M

    2012-12-01

    In order for next-generation sequencing to become widely used as a diagnostic in the healthcare industry, sequencing instrumentation will need to be mass produced with a high degree of quality and economy. One way to achieve this is to recast DNA sequencing in a format that fully leverages the manufacturing base created for computer chips, complementary metal-oxide semiconductor chip fabrication, which is the current pinnacle of large scale, high quality, low-cost manufacturing of high technology. To achieve this, ideally the entire sensory apparatus of the sequencer would be embodied in a standard semiconductor chip, manufactured in the same fab facilities used for logic and memory chips. Recently, such a sequencing chip, and the associated sequencing platform, has been developed and commercialized by Ion Torrent, a division of Life Technologies, Inc. Here we provide an overview of this semiconductor chip based sequencing technology, and summarize the progress made since its commercial introduction. We described in detail the progress in chip scaling, sequencing throughput, read length, and accuracy. We also summarize the enhancements in the associated platform, including sample preparation, data processing, and engagement of the broader development community through open source and crowdsourcing initiatives. PMID:23208921

  6. Tunnel based spin injection devices for semiconductor spintronics

    NASA Astrophysics Data System (ADS)

    Jiang, Xin

    This dissertation summarizes the work on spin-dependent electron transport and spin injection in tunnel based spintronic devices. In particular, it focuses on a novel three terminal hot electron device combining ferromagnetic metals and semiconductors---the magnetic tunnel transistor (MTT). The MTT has extremely high magnetic field sensitivity and is a useful tool to explore spin-dependent electron transport in metals, semiconductors, and at their interfaces over a wide energy range. In Chap. 1, the basic concept and fabrication of the MTT are discussed. Two types of MTTs, with ferromagnetic single and spin-valve base layers, respectively, are introduced and compared. In the following chapters, the transport properties of the MTT are discussed in detail, including the spin-dependent hot electron attenuation lengths in CoFe and NiFe thin films on GaAs (Chap. 2), the bias voltage dependence of the magneto-current (Chap. 3), the giant magneto-current effect in MTTs with a spin-valve base (Chap. 4), and the influence of non-magnetic seed layers on magneto-electronic properties of MTTs with a Si collector (Chap. 5). Chap. 6 concentrates on electrical injection of spin-polarized electrons into semiconductors, which is an essential ingredient in semiconductor spintronics. Two types of spin injectors are discussed: an MTT injector and a CoFe/MgO tunnel injector. The spin polarization of the injected electron current is detected optically by measuring the circular polarization of electroluminescence from a quantum well light emitting diode. Using an MTT injector a spin polarization of ˜10% is found for injection electron energy of ˜2 eV at 1.4K. This moderate spin polarization is most likely limited by significant electron spin relaxation at high energy. Much higher spin injection efficiency is obtained by using a CoFe/MgO tunnel injector with spin polarization values of ˜50% at 100K. The temperature and bias dependence of the electroluminescence polarization provides

  7. The Relationships among Measures of Intrinsic Motivation, Instructional Design, and Learning in Computer-Based Instruction.

    ERIC Educational Resources Information Center

    Rezabek, Randy

    The intent of this study was to explore the intrinsic aspects of motivation, and to see if the design of instruction could positively affect learners' levels of intrinsic motivation toward the subject matter. The following questions were addressed: (1) Will different computer-based instructional treatments which have been designed to reflect…

  8. Microwave photonic interference mitigation filter based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Xu, Enming; Zhang, Xinliang; Zhou, Lina; Zhang, Yu; Yu, Yuan; Wang, Fei; Huang, Dexiu

    2009-11-01

    A microwave photonic interference mitigation filter is proposed and experimentally demonstrated. The structure is based on a recirculating delay line loop comprising a semiconductor optical amplifier (SOA) and a tunable narrowband optical filter. Converted signal used as negative tap is generated through wavelength conversion employing cross-gain modulation of amplified spontaneous emission spectrum of the SOA. The converted signal circulating in the RDL loop realizes a high quality factor (Q) response after photo-detection. A bandpass response with negative coefficients combined with a broadband allpass response achieves a notch response with flat passband.

  9. Trace explosive sensor devices based on semiconductor nanomaterials

    NASA Astrophysics Data System (ADS)

    Wang, Danling

    This dissertation discusses an explosive sensing device based on semiconductor nanomaterials. Here, we mainly focus on two kinds of materials: titanium dioxide nanowires and silicon nanowires to detect explosive trace vapor. Herein, methods for the synthesis, fabrication, design of nanostructured sensing materials using low-cost hydrothermal process are present. In addition, the nanomaterials have been systemically tested on different explosive. The first part of dissertation is focused on the fabrication of TiO2(B) dominant nanowires and testing the response to explosives. It was found that the high porous TiO2(B) nanowires when mixed anatase TiO2, exhibit a very fast and highly sensitive response to nitro-containing explosives. The second part of dissertation has studied the basic sensing mechanism of TiO2(B) nanowire sensor to detect explosives. It shows the specific surface characteristics of TiO2 responsible for the nitro-containing explosives. This information is then used to propose a method using UV illumination to reduce the effect of water vapor on TiO2(B) nanowires. The third part discussed an explosive sensor based on silicon nanowires. We analyzed the mechanism of silicon nanowires to detect nitro-related explosive compounds. In order to further investigate the sensing mechanism of TiO2, the fourth part of dissertation studies the effect on sensor performance by using different crystal phases of TiO2, different microstructure of TiO2, surface modification of TiO2, and different kinds of nanostructured semiconductors such as ZnO nanowires, TiO2 coated ZnO nanowires, V2O5 nanowires, and CdS nanowires to detect explosives. It is found that only TiO2 related semiconductor shows good response to explosives.

  10. Semiconductor-nanocrystals-based white light-emitting diodes.

    PubMed

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z

    2010-08-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white light-emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed. PMID:20602425

  11. Semiconductor product analysis challenges based on the 1999 ITRS

    SciTech Connect

    JOSEPH,THOMAS W.; ANDERSON,RICHARD E.; GILFEATHER,GLEN; LECLAIRE,CAROLE; YIM,DANIEL

    2000-05-30

    One of the most significant challenges for technology characterization and future analysis is to keep instrumentation and techniques in step with the development of technology itself. Not only are dimensions shrinking and new materials being employed, but the rate of change is increasing. According to the 1999 International Technology Roadmap for Semiconductors (ITRS) the number and difficulty of the technical challenges continue to increase as technology moves forward. It could be argued that technology cannot be developed without appropriate analytical technique, nevertheless while much effort is being directed at materials and processes, only a small proportion is being directed at analysis. Whereas previous versions of the Semiconductor Industry Association roadmap contained a small number of implicit references to characterization and analysis, the 1999 ITRS contains many explicit references. It is clear that characterization is now woven through the roadmap, and technology developers in all areas appreciate the fact that new instrumentation and techniques will be required to sustain the rate of development the semiconductor industry has seen in recent years. Late in 1999, a subcommittee of the Sematech Product Analysis Forum reviewed the ITRS and identified a top-ten list of challenges which the failure analysis community will face as present technologies are extended and future technologies are developed. This paper discusses the PAF top-ten list of challenges, which is based primarily on the Difficult Challenges tables from each ITRS working group. Eight of the top-ten are challenges of significant technical magnitude, only two could be considered non-technical in nature. Most of these challenges cut across several working group areas and could be considered common threads in the roadmap, ranging from fault simulation and modeling to imaging small features, from electrical defect isolation to reprocessing.

  12. Space division switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, R. F.; Kazovsky, L. G.; Goodman, J. W.

    Semiconductor optical amplifiers (SOA's) can be used in space-division (SD) switches to provide both switching and optical gain. We present a general analysis of optical switches using SOA's, considering noise and saturation effects associated with amplified spontaneous emission. Based on this analysis, we derive size limitations of SD switches. Three specific SD switching architectures are considered. For a lumped gain matrix vector multiplier (MVM) switch, switch sizes are limited to the range of 3000 x 3000 for SOA's with saturation output powers of 100 mW. Based on the effects considered in our analysis, distributed gain MVM switches and Benes switches are not limited by signal-to noise ratio and saturation up to sizes of 10 exp 80 x 10 exp 80 for SOA's with saturation output powers of 100 mW.

  13. Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-02-01

    Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal-insulator-semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the semiconductor are determined by measuring the admittance of MIS structures in the frequency range of 50 kHz to 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded gap layer demonstrate a high-frequency behavior with respect to the recharge time of surface states located near the Fermi level for an intrinsic semiconductor. The formation time of the inversion layer is decreased by less than two times, if a near-surface graded-gap layer is created. The dopant distribution profile in the near-surface layer of the semiconductor is found, and it is shown that for structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has a minimum near the interface with the insulator. For MIS structure based on n-Hg0.78Cd0.22Te, the dopant concentration is more uniformly distributed in the near-surface layer of the semiconductor.

  14. Flexible non-volatile memory devices based on organic semiconductors

    NASA Astrophysics Data System (ADS)

    Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

    2015-09-01

    The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

  15. Supramolecular Luminescence from Oligofluorenol-Based Supramolecular Polymer Semiconductors

    PubMed Central

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-01-01

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics. PMID:24232455

  16. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

    PubMed Central

    Gu, Haoshuang; Wang, Zhao; Hu, Yongming

    2012-01-01

    Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

  17. Optimization algorithm based characterization scheme for tunable semiconductor lasers.

    PubMed

    Chen, Quanan; Liu, Gonghai; Lu, Qiaoyin; Guo, Weihua

    2016-09-01

    In this paper, an optimization algorithm based characterization scheme for tunable semiconductor lasers is proposed and demonstrated. In the process of optimization, the ratio between the power of the desired frequency and the power except of the desired frequency is used as the figure of merit, which approximately represents the side-mode suppression ratio. In practice, we use tunable optical band-pass and band-stop filters to obtain the power of the desired frequency and the power except of the desired frequency separately. With the assistance of optimization algorithms, such as the particle swarm optimization (PSO) algorithm, we can get stable operation conditions for tunable lasers at designated frequencies directly and efficiently. PMID:27607701

  18. Novel diluted magnetic semiconductor materials based on zinc oxide

    NASA Astrophysics Data System (ADS)

    Chakraborti, Deepayan

    The primary aim of this work was to develop a ZnO based diluted magnetic semiconductor (DMS) materials system which displays ferromagnetism above room temperature and to understand the origin of long-range ferromagnetic ordering in these systems. Recent developments in the field of spintronics (spin based electronics) have led to an extensive search for materials in which semiconducting properties can be integrated with magnetic properties to realize the objective of successful fabrication of spin-based devices. For these devices we require a high efficiency of spin current injection at room temperature. Diluted magnetic semiconductors (DMS) can serve this role, but they should not only display room temperature ferromagnetism (RTFM) but also be capable of generating spin polarized carriers. Transition metal doped ZnO has proved to be a potential candidate as a DMS showing RTFM. The origin of ferromagnetic ordering in ZnO is still under debate. However, the presence of magnetic secondary phases, composition fluctuations and nanoclusters could also explain the observation of ferromagnetism in the DMS samples. This encouraged us to investigate Cu-doped(+ spin in the 2+ valence state) ZnO system as a probable candidate exhibiting RTFM because neither metallic Cu nor its oxides (Cu2O or CuO) are ferromagnetic. The role of defects and free carriers on the ferromagnetic ordering of Cu-doped ZnO thin films was studied to ascertain the origin of ferromagnetism in this system. A novel non-equilibrium Pulsed Laser Deposition technique has been used to grow high quality epitaxial thin films of Cu:ZnO and (Co,Cu):ZnO on c-plane Sapphire by domain matching epitxay. Both the systems showed ferromagnetic ordering above 300K but Cu ions showed a much stronger ferromagnetic ordering than Co, especially at low concentrations (1-2%) of Cu where we realized near 100% polarization. But, the incorporation of Cu resulted in a 2-order of magnitude rise in the resistivity from 10-1 to 101

  19. Trion-based Optical Processes in Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    Baldwin, Thomas Kendrick

    In a semiconductor, negative charge is carried by conduction-band electrons and positive charge is carried by valence-band holes. While charge transport properties can be understood by considering the motion of these carriers individually, the optical properties are largely determined by their mutual interaction. The hydrogen-like bound state of an electron with a hole, or exciton, is the fundamental optical excitation in direct-gap materials such as gallium arsenide and cadmium telluride. In this dissertation, we consider charged excitons, or trions. A bound state of an exciton with a resident electron or hole, trions are a relatively pure manifestation of the three-body problem which can be studied experimentally. This is a subject of practical as well as academic interest: Since the trion is the elementary optical excitation of a resident free carrier, the related optical processes can open pathways for manipulating carrier spin and carrier transport. We present three experimental investigations of trion-based optical processes in semiconductor quantum wells. In the first, we demonstrate electromagnetically induced transparency via the electron spin coherence made possible by the trion transition. We explore the practical limits of this technique in high magnetic fields. In the second, we present a direct measurement of trion and exciton oscillator strength at high magnetic fields. These data reveal insights about the structure of the trion's three-body wavefunction relative to that of its next excited state, the triplet trion. In the last, we investigate the mechanism underlying exciton-correlated tunneling, an optically-controllable transport process in mixed-type quantum wells. Extensive experimental studies indicate that it is due to a local, indirect interaction between an exciton and a hole, forming one more example of a trion-mediated optical process. This dissertation includes previously published co-authored material.

  20. EDITORIAL: Challenges for first-principles based properties of defects in semiconductors and oxides Challenges for first-principles based properties of defects in semiconductors and oxides

    NASA Astrophysics Data System (ADS)

    2009-12-01

    First-principles methods based on density functional theory (DFT) have been the mainstay of theoretical studies of the properties of semiconductor and oxide materials. Despite the tremendous successes of the past few decades, significant challenges remain in adapting these methods for predictive simulations that are quantitatively useful in predicting device behavior. Recent advances in computational capabilities, and improved theoretical methods taking advantage of ever more powerful computer hardware, offer the possibility that computational modeling may finally fulfill the long-sought goal of truly predictive simulations for defect properties. The exciting prospect of using modelling as `virtual experiments' to obtain quantitatively accurate predictions of semiconductor behavior seems tantalizingly close, but challenges still remain, which is evident in the many divergent approaches adopted for the modelling and simulation of various aspects of defect behavior. This special issue consists of papers describing different approaches to the study of defects, and the challenges that remain from the perspective of leading scientists in the field. It includes contributions on the theoretical and computational issues of using density functional methods for defect calculations [Nieminen], treatments to account for finite computational cell effects in periodic defect supercell calculations using analytical constructions [Lany and Zunger], or cell-size extrapolation techniques [Castleton et al], or instead using embedded cluster calculations to model charge-trapping defects [Shluger et al]. This issue also includes a description of the computation of g-tensor and hyperfine splitting for defect centers [Valentin and Pacchione], computation of vibrational properties of impurities from dynamical DFT calculations [Estreicher et al], and the use of DFT supercell calculations to predict charge transition energy levels of intrinsic defects in GaAs [Schultz and von Lilienfeld

  1. Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

    SciTech Connect

    Mario Agio

    2002-12-31

    This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser.

  2. Bismuth-based oxide semiconductors: Mild synthesis and practical applications

    NASA Astrophysics Data System (ADS)

    Timmaji, Hari Krishna

    In this dissertation study, bismuth based oxide semiconductors were prepared using 'mild' synthesis techniques---electrodeposition and solution combustion synthesis. Potential environmental remediation and solar energy applications of the prepared oxides were evaluated. Bismuth vanadate (BiVO4) was prepared by electrodeposition and solution combustion synthesis. A two step electrosynthesis strategy was developed and demonstrated for the first time. In the first step, a Bi film was first electrodeposited on a Pt substrate from an acidic BiCl3 medium. Then, this film was anodically stripped in a medium containing hydrolyzed vanadium precursor, to generate Bi3+, and subsequent BiVO4 formation by in situ precipitation. The photoelectrochemical data were consistent with the in situ formation of n-type semiconductor films. In the solution combustion synthesis procedure, BiVO4 powders were prepared using bismuth nitrate pentahydrate as the bismuth precursor and either vanadium chloride or vanadium oxysulfate as the vanadium precursor. Urea, glycine, or citric acid was used as the fuel. The effect of the vanadium precursor on the photocatalytic activity of combustion synthesized BiVO 4 was evaluated in this study. Methyl orange was used as a probe to test the photocatalytic attributes of the combustion synthesized (CS) samples, and benchmarked against a commercial bismuth vanadate sample. The CS samples showed superior activity to the commercial benchmark sample, and samples derived from vanadium chloride were superior to vanadium oxysulfate counterparts. The photoelectrochemical properties of the various CS samples were also studied and these samples were shown to be useful both for environmental photocatalytic remediation and water photooxidation applications. Silver bismuth tungstate (AgBiW2O8) nanoparticles were prepared for the first time by solution combustion synthesis by using silver nitrate, bismuth nitrate, sodium tungstate as precursors for Ag, Bi, and W

  3. Ground based preparation for microgravity growth of alloy semiconductors

    NASA Technical Reports Server (NTRS)

    Fripp, Archibald L.; Debnam, W. J.; Crouch, R. K.; Simchick, R. T.; Sorokach, S. K.; Rosch, W.; Knuteson, D. J.; Barber, P. G.

    1991-01-01

    Ground-based research conducted in order to prepare a microgravity space flight experiment is presented. The thermophysical properties of a PbSnTe alloy used for semiconductors are investigated, and furnace calibration and fluid-flow measurements are performed. The alloy has a zero energy crossing at approximately 40 percent SnTe in its band-gap vs composition diagram, which facilitates the design of long-wavelength IR detectors and lasers. The uniformity of devices made from this material depends on the ratio of PbTe and SnTe and requires the composition of the crystal growth to be closely controlled. The main obstacle to such control is the fact that liquid of this material is always solutally or thermally unstable, and, in a high-temperature gradient, the double convective instability cannot be made stable by balancing thermal and solutal expansion. In order to extend the science of crystal growth, the limits of suppression of convection have to be tested in low earth orbit.

  4. A game theoretic framework for incentive-based models of intrinsic motivation in artificial systems

    PubMed Central

    Merrick, Kathryn E.; Shafi, Kamran

    2013-01-01

    An emerging body of research is focusing on understanding and building artificial systems that can achieve open-ended development influenced by intrinsic motivations. In particular, research in robotics and machine learning is yielding systems and algorithms with increasing capacity for self-directed learning and autonomy. Traditional software architectures and algorithms are being augmented with intrinsic motivations to drive cumulative acquisition of knowledge and skills. Intrinsic motivations have recently been considered in reinforcement learning, active learning and supervised learning settings among others. This paper considers game theory as a novel setting for intrinsic motivation. A game theoretic framework for intrinsic motivation is formulated by introducing the concept of optimally motivating incentive as a lens through which players perceive a game. Transformations of four well-known mixed-motive games are presented to demonstrate the perceived games when players' optimally motivating incentive falls in three cases corresponding to strong power, affiliation and achievement motivation. We use agent-based simulations to demonstrate that players with different optimally motivating incentive act differently as a result of their altered perception of the game. We discuss the implications of these results both for modeling human behavior and for designing artificial agents or robots. PMID:24198797

  5. Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Heng-Yu; Tseng, Chun-Yen

    2015-09-01

    In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 1010 cmHz0.5W-1 to 2480 and 2.43 × 1010 cmHz0.5W-1, respectively.

  6. Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors.

    PubMed

    Lee, Ching-Ting; Lin, Heng-Yu; Tseng, Chun-Yen

    2015-01-01

    In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 10(10) cmHz(0.5)W(-1) to 2480 and 2.43 × 10(10) cmHz(0.5)W(-1), respectively. PMID:26324247

  7. Ratiometric fluorescence, electrochemiluminescence, and photoelectrochemical chemo/biosensing based on semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Wu, Peng; Hou, Xiandeng; Xu, Jing-Juan; Chen, Hong-Yuan

    2016-04-01

    Ratiometric fluorescent sensors, which can provide built-in self-calibration for correction of a variety of analyte-independent factors, have attracted particular attention for analytical sensing and optical imaging with the potential to provide a precise and quantitative analysis. A wide variety of ratiometric sensing probes using small fluorescent molecules have been developed. Compared with organic dyes, exploiting semiconductor quantum dots (QDs) in ratiometric fluorescence sensing is even more intriguing, owing to their unique optical and photophysical properties that offer significant advantages over organic dyes. In this review, the main photophysical mechanism for generating dual-emission from QDs for ratiometry is discussed and categorized in detail. Typically, dual-emission can be obtained either with energy transfer from QDs to dyes or with independent dual fluorophores of QDs and dye/QDs. The recent discovery of intrinsic dual-emission from Mn-doped QDs offers new opportunities for ratiometric sensing. Particularly, the signal transduction of QDs is not restricted to fluorescence, and electrochemiluminescence and photoelectrochemistry from QDs are also promising for sensing, which can be made ratiometric for correction of interferences typically encountered in electrochemistry. All these unique photophysical properties of QDs lead to a new avenue of ratiometry, and the recent progress in this area is addressed and summarized here. Several interesting applications of QD-based ratiometry are presented for the determination of metal ions, temperature, and biomolecules, with specific emphasis on the design principles and photophysical mechanisms of these probes.

  8. Stimulating Students' Intrinsic Motivation for Learning Chemistry through the Use of Context-Based Learning Modules

    ERIC Educational Resources Information Center

    Vaino, Katrin; Holbrook, Jack; Rannikmae, Miia

    2012-01-01

    This paper introduces a research project in which five chemistry teachers, working in cooperation with university researchers, implemented a new teaching approach using context-based modules specially designed to stimulate the intrinsic motivation of students. The intention was to induce change in chemistry teachers' teaching approach from more…

  9. Flexible OFDM-based access systems with intrinsic function of chromatic dispersion compensation

    NASA Astrophysics Data System (ADS)

    Konishi, Tsuyoshi; Murakawa, Takuya; Nagashima, Tomotaka; Hasegawa, Makoto; Shimizu, Satoshi; Hattori, Kuninori; Okuno, Masayuki; Mino, Shinji; Himeno, Akira; Uenohara, Hiroyuki; Wada, Naoya; Cincotti, Gabriella

    2015-12-01

    Cost-effective and tunable chromatic dispersion compensation in a fiber link are still an open issue in metro and access networks to cope with increasing costs and power consumption. Intrinsic chromatic dispersion compensation functionality of optical fractional orthogonal frequency division multiplexing is discussed and experimentally demonstrated using dispersion-tunable transmitter and receiver based on wavelength selective switching devices.

  10. Cu2O-based solar cells using oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-01-01

    We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0

  11. Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Yamada, Y.; Toyosaki, H.; Hasegawa, T.; Koinuma, H.; Kawasaki, M.

    2004-02-01

    A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS unidentified ferromagnetic oxide (UFO). Perspectives and possible devices are also given.

  12. Assessing Online Textual Feedback to Support Student Intrinsic Motivation Using a Collaborative Text-Based Dialogue System: A Qualitative Study

    ERIC Educational Resources Information Center

    Shroff, Ronnie H.; Deneen, Christopher

    2011-01-01

    This paper assesses textual feedback to support student intrinsic motivation using a collaborative text-based dialogue system. A research model is presented based on research into intrinsic motivation, and the specific construct of feedback provides a framework for the model. A qualitative research methodology is used to validate the model.…

  13. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    SciTech Connect

    Tanaka, Masaaki; Ohya, Shinobu Nam Hai, Pham

    2014-03-15

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  14. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    NASA Astrophysics Data System (ADS)

    Tanaka, Masaaki; Ohya, Shinobu; Nam Hai, Pham

    2014-03-01

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  15. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

  16. Exploring the relationship between hub proteins and drug targets based on GO and intrinsic disorder.

    PubMed

    Fu, Yuanyuan; Guo, Yanzhi; Wang, Yuelong; Luo, Jiesi; Pu, Xuemei; Li, Menglong; Zhang, Zhihang

    2015-06-01

    Protein-protein interactions (PPIs) play essential roles in many biological processes. In protein-protein interaction networks, hubs involve in numbers of PPIs and may constitute an important source of drug targets. The intrinsic disorder proteins (IDPs) with unstable structures can promote the promiscuity of hubs and also involve in many disease pathways, so they also could serve as potential drug targets. Moreover, proteins with similar functions measured by semantic similarity of gene ontology (GO) terms tend to interact with each other. Here, the relationship between hub proteins and drug targets based on GO terms and intrinsic disorder was explored. The semantic similarities of GO terms and genes between two proteins, and the rate of intrinsic disorder residues of each protein were extracted as features to characterize the functional similarity between two interacting proteins. Only using 8 feature variables, prediction models by support vector machine (SVM) were constructed to predict PPIs. The accuracy of the model on the PPI data from human hub proteins is as high as 83.72%, which is very promising compared with other PPI prediction models with hundreds or even thousands of features. Then, 118 of 142 PPIs between hubs are correctly predicted that the two interacting proteins are targets of the same drugs. The results indicate that only 8 functional features are fully efficient for representing PPIs. In order to identify new targets from IDP dataset, the PPIs between hubs and IDPs are predicted by the SVM model and the model yields a prediction accuracy of 75.84%. Further research proves that 3 of 5 PPIs between hubs and IDPs are correctly predicted that the two interacting proteins are targets of the same drugs. All results demonstrate that the model with only 8-dimensional features from GO terms and intrinsic disorder still gives a good performance in predicting PPIs and further identifying drug targets. PMID:25854804

  17. High-efficiency photovoltaics based on semiconductor nanostructures

    SciTech Connect

    Yu, Paul K.L.; Yu, Edward T.; Wang, Deli

    2011-10-31

    The objective of this project was to exploit a variety of semiconductor nanostructures, specifically semiconductor quantum wells, quantum dots, and nanowires, to achieve high power conversion efficiency in photovoltaic devices. In a thin-film device geometry, the objectives were to design, fabricate, and characterize quantum-well and quantum-dot solar cells in which scattering from metallic and/or dielectric nanostructures was employed to direct incident photons into lateral, optically confined paths within a thin (~1-3um or less) device structure. Fundamental issues concerning nonequilibrium carrier escape from quantum-confined structures, removal of thin-film devices from an epitaxial growth substrate, and coherent light trapping in thin-film photovoltaic devices were investigated. In a nanowire device geometry, the initial objectives were to engineer vertical nanowire arrays to optimize optical confinement within the nanowires, and to extend this approach to core-shell heterostructures to achieve broadspectrum absorption while maintaining high opencircuit voltages. Subsequent work extended this approach to include fabrication of nanowire photovoltaic structures on low-cost substrates.

  18. Roles of cocatalysts in semiconductor-based photocatalytic hydrogen production.

    PubMed

    Yang, Jinhui; Yan, Hongjian; Zong, Xu; Wen, Fuyu; Liu, Meiying; Li, Can

    2013-08-13

    A photocatalyst is defined as a functional composite material with three components: photo-harvester (e.g. semiconductor), reduction cocatalyst (e.g. for hydrogen evolution) and oxidation cocatalyst (e.g. for oxidation evolution from water). Loading cocatalysts on semiconductors is proved to be an effective approach to promote the charge separation and transfer, suppress the charge recombination and enhance the photocatalytic activity. Furthermore, the photocatalytic performance can be significantly improved by loading dual cocatalysts for reduction and oxidation, which could lower the activation energy barriers, respectively, for the two half reactions. A quantum efficiency (QE) as high as 93 per cent at 420 nm for H₂ production has been achieved for Pt-PdS/CdS, where Pt and PdS, respectively, act as reduction and oxidation cocatalysts and CdS as a photo-harvester. The dual cocatalysts work synergistically and enhance the photocatalytic reaction rate, which is determined by the slower one (either reduction or oxidation). This work demonstrates that the cocatalysts, especially the dual cocatalysts for reduction and oxidation, are crucial and even absolutely necessary for achieving high QEs in photocatalytic hydrogen production, as well as in photocatalytic water splitting. PMID:23816907

  19. Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors

    NASA Astrophysics Data System (ADS)

    Reason, Matthew; Bennett, Brian R.; Magno, Richard; Boos, J. Brad

    2011-01-01

    We have investigated regrowth of p + InGaSb on AlGaSb and on thin InAs etch-stop layers after atomic hydrogen cleaning (AHC) surface treatments. Following certain cleaning conditions, the surface morphologies for In0.27Ga0.73Sb regrown on InAs exhibit smooth surfaces with similar root-mean-square (rms) roughness to the as-grown InAs, which in turn is similar to the roughness of the AlGaSb buffer layer below it. In addition, hole mobilities for InGaSb regrown on AHC InAs approach the highest mobilities reported to date for any p + III-V semiconductors. A wide range of AHC conditions including substrate temperatures from 280°C to 370°C and exposure durations between 5 min and 30 min result in smooth InGaSb films with low resistivity.

  20. Novel semiconductor radiation detector based on mercurous halides

    NASA Astrophysics Data System (ADS)

    Chen, Henry; Kim, Joo-Soo; Amarasinghe, Proyanthi; Palosz, Withold; Jin, Feng; Trivedi, Sudhir; Burger, Arnold; Marsh, Jarrod C.; Litz, Marc S.; Wiejewarnasuriya, Priyalal S.; Gupta, Neelam; Jensen, Janet; Jensen, James

    2015-08-01

    The three most important desirable features in the search for room temperature semiconductor detector (RTSD) candidate as an alternative material to current commercially off-the-shelf (COTS) material for gamma and/or thermal neutron detection are: low cost, high performance and long term stability. This is especially important for pager form application in homeland security. Despite years of research, no RTSD candidate so far can satisfy the above 3 features simultaneously. In this work, we show that mercurous halide materials Hg2X2 (X= I, Cl, Br) is a new class of innovative compound semiconductors that is capable of delivering breakthrough advances to COTS radiation detector materials. These materials are much easier to grow thicker and larger volume crystals. They can detect gamma and potentially neutron radiation making it possible to detect two types of radiation with just one crystal material. The materials have wider bandgaps (compared to COTS) meaning higher resistivity and lower leakage current, making this new technology more compatible with available microelectronics. The materials also have higher atomic number and density leading to higher stopping power and better detector sensitivity/efficiency. They are not hazardous so there are no environmental and health concerns during manufacturing and are more stable making them more practical for commercial deployment. Focus will be on Hg2I2. Material characterization and detector performance will be presented and discussed. Initial results show that an energy resolution better than 2% @ 59.6 keV gamma from Am-241 and near 1% @ 662 keV from Cs-137 source can be achieved at room temperature.

  1. A bio-aerosol detection technique based on tryptophan intrinsic fluorescence measurement

    NASA Astrophysics Data System (ADS)

    Cai, Shuyao; Zhang, Pei; Zhu, Linglin; Zhao, Yongkai; Huang, Huijie

    2011-12-01

    Based on the measurement of intrinsic fluorescence, a set of bio-aerosol including virus aerosols detection instrument is developed, with which a method of calibration is proposed using tryptophan as the target. The experimental results show a good linear relationship between the fluorescence voltage of the instrument and the concentration of the tryptophan aerosol. An excellent correlation (R2>=0.99) with the sensitivity of 4000PPL is obtained. The research demonstrates the reliability of the bio-aerosol detection by measuring the content of tryptophan. Further more the feasibility of prejudgment to the species of bio-aerosol particles with the multi-channel fluorescence detection technology is discussed.

  2. Terahertz applications of integrated circuits based on intrinsic Josephson junctions in high Tc superconductors

    NASA Astrophysics Data System (ADS)

    Wang, Huabing; Wu, Peiheng; Yamashita, Tsutomu

    2001-10-01

    Using a newly developed double-side fabrication method, an IJJ stack plus a bow-tie antenna and chokes were integrated in a slice 200 nm thick and singled out from inside a bulk Bi2Sr2CaCu2O8+x (BSCCO) single crystal. The junctions in the fabricated stack were very uniform, and the number of junctions involved was rather controllable. In addition to this method, which can be used to fabricate integrated circuits based on intrinsic Josephson junctions in high temperature (Tc) superconductors, also reported will be terahertz responses of IJJs, and the possible applications in quantum voltage standard, spectroscopy, and so on.

  3. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  4. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-01

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al2O3 or HfO2 dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO2 based capacitors compared to Al2O3 based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  5. Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors

    NASA Astrophysics Data System (ADS)

    Tas, M.; Şaşıoǧlu, E.; Galanakis, I.; Friedrich, C.; Blügel, S.

    2016-05-01

    Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the G W approximation within the framework of the FLAPW method, we study the quasiparticle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the s p -electron based semiconductors such as Si and GaAs, in these systems, the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2 eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the s p -chemical element.

  6. Semiconductor-based experiments for neutrinoless double beta decay search

    NASA Astrophysics Data System (ADS)

    Barnabé Heider, Marik; Gerda Collaboration

    2012-08-01

    Three experiments are employing semiconductor detectors in the search for neutrinoless double beta (0νββ) decay: COBRA, Majorana and GERDA. COBRA is studying the prospects of using CdZnTe detectors in terms of achievable energy resolution and background suppression. These detectors contain several ββ emitters and the most promising for 0νββ-decay search is 116Cd. Majorana and GERDA will use isotopically enriched high purity Ge detectors to search for 0νββ-decay of 76Ge. Their aim is to achieve a background ⩽10-3 counts/(kgṡyṡkeV) at the Q improvement compared to the present state-of-art. Majorana will operate Ge detectors in electroformed-Cu vacuum cryostats. A first cryostat housing a natural-Ge detector array is currently under preparation. In contrast, GERDA is operating bare Ge detectors submerged in liquid argon. The construction of the GERDA experiment is completed and a commissioning run started in June 2010. A string of natural-Ge detectors is operated to test the complete experimental setup and to determine the background before submerging the detectors enriched in 76Ge. An overview and a comparison of these three experiments will be presented together with the latest results and developments.

  7. Organic Semiconductors based on Dyes and Color Pigments.

    PubMed

    Gsänger, Marcel; Bialas, David; Huang, Lizhen; Stolte, Matthias; Würthner, Frank

    2016-05-01

    Organic dyes and pigments constitute a large class of industrial products. The utilization of these compounds in the field of organic electronics is reviewed with particular emphasis on organic field-effect transistors. It is shown that for most major classes of industrial dyes and pigments, i.e., phthalocyanines, perylene and naphthalene diimides, diketopyrrolopyrroles, indigos and isoindigos, squaraines, and merocyanines, charge-carrier mobilities exceeding 1 cm(2) V(-1) s(-1) have been achieved. The most widely investigated molecules due to their n-channel operation are perylene and naphthalene diimides, for which even values close to 10 cm(2) V(-1) s(-1) have been demonstrated. The fact that all of these π-conjugated colorants contain polar substituents leading to strongly quadrupolar or even dipolar molecules suggests that indeed a much larger structural space shows promise for the design of organic semiconductor molecules than was considered in this field traditionally. In particular, because many of these dye and pigment chromophores demonstrate excellent thermal and (photo-)chemical stability in their original applications in dyeing and printing, and are accessible by straightforward synthetic protocols, they bear a particularly high potential for commercial applications in the area of organic electronics. PMID:27028553

  8. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong; Zhu, Rui

    2015-07-15

    We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  9. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Lu, Nianduan; Li, Ling; Liu, Ming

    2015-05-01

    Recent measurements conducted over a large range of temperature and carrier density have found that the Seebeck coefficient exhibits an approaching disorder-free transport feature in high-mobility conjugated polymers [D. Venkateshvaran et al., Nature 515, 384 (2014), 10.1038/nature13854]. It is difficult for the current Seebeck coefficient model to interpret the feature of the charge transport approaching disorder-free transport. We present a general analytical model to describe the Seebeck effect for organic semiconductors based on the hopping transport and percolation theory. The proposed model can well explain the Seebeck feature of the polymers with approaching disorder-free transport, as well as that of the organic semiconductors with the general disorder. The simulated results imply that the Seebeck coefficient in the organic semiconductors would happen to transfer from temperature dependence to temperature independence with the decrease of the energetic disorder.

  10. Pixelated CdTe detectors to overcome intrinsic limitations of crystal based positron emission mammographs

    NASA Astrophysics Data System (ADS)

    De Lorenzo, G.; Chmeissani, M.; Uzun, D.; Kolstein, M.; Ozsahin, I.; Mikhaylova, E.; Arce, P.; Cañadas, M.; Ariño, G.; Calderón, Y.

    2013-01-01

    A positron emission mammograph (PEM) is an organ dedicated positron emission tomography (PET) scanner for breast cancer detection. State-of-the-art PEMs employing scintillating crystals as detection medium can provide metabolic images of the breast with significantly higher sensitivity and specificity with respect to standard whole body PET scanners. Over the past few years, crystal PEMs have dramatically increased their importance in the diagnosis and treatment of early stage breast cancer. Nevertheless, designs based on scintillators are characterized by an intrinsic deficiency of the depth of interaction (DOI) information from relatively thick crystals constraining the size of the smallest detectable tumor. This work shows how to overcome such intrinsic limitation by substituting scintillating crystals with pixelated CdTe detectors. The proposed novel design is developed within the Voxel Imaging PET (VIP) Pathfinder project and evaluated via Monte Carlo simulation. The volumetric spatial resolution of the VIP-PEM is expected to be up to 6 times better than standard commercial devices with a point spread function of 1 mm full width at half maximum (FWHM) in all directions. Pixelated CdTe detectors can also provide an energy resolution as low as 1.5% FWHM at 511 keV for a virtually pure signal with negligible contribution from scattered events.

  11. Intrinsic signatures of polymer based fiber reinforced composite structures: An ultrasonic approach

    SciTech Connect

    Good, M.S.; Hansen, N.H.; Heasler, P.G.; Undem, H.A.; Fuller, J.L.; Skorpik, J.R.

    1993-09-01

    Combination of ultrasound, image comparison, and statistical analysis provide a method for acquiring a subsurface, intrinsic signature from polymer based, fiber-reinforced composites. Although materials properties are carefully controlled, localized fluctuations in the macrostructure and microstructure permit a basis for ultrasound and other NDE methods to read intrinsic signatures from a material. Under ideal conditions where a material signature is stable and has sufficient spatial features as a signature, an error rate on the order of one-out-of-a-million is feasible. A conclusion of an independent functional test performed on the laboratory prototype as it existed in June 1991 is that the system proved effective as a proof-of-concept system. An issue raised by the independent evaluation is that system performance is still at risk of factors relating to signature stability, particularly moisture absorption and material creep. System improvements made to mitigate noise sources identified by the independent evaluation include (1) implementation of a 3.0 {minus} 4.5 {mu}S software gate, (2) use of a RMS amplitude instead of the gated peak amplitude, and (3) optional use of a suction cup holder to facilitate reader alignment and scan consistency.

  12. Intrinsic interference mitigating coordinated beamforming for the FBMC/OQAM based downlink

    NASA Astrophysics Data System (ADS)

    Cheng, Yao; Li, Peng; Haardt, Martin

    2014-12-01

    In this work, we propose intrinsic interference mitigating coordinated beamforming (IIM-CBF)-based transmission strategies for the downlink of multi-user multiple-input-multiple-out (MIMO) systems and coordinated multi-point (CoMP) systems where filter bank based multi-carrier with offset quadrature amplitude modulation (FBMC/OQAM) is employed. Our goal is to alleviate the dimensionality constraint imposed on the state-of-the-art solutions for FBMC/OQAM-based space division multiple access that the total number of receive antennas of the users must not exceed the number of transmit antennas at the base station. First, two IIM-CBF algorithms are developed for a single-cell multi-user MIMO downlink system. The central idea is to jointly and iteratively calculate the precoding matrix and decoding matrix for each subcarrier to mitigate the multi-user interference as well as the intrinsic interference inherent in FBMC/OQAM-based systems. Second, for a CoMP downlink scenario where partial coordination among the base stations is considered, the application of coordinated beamforming-based transmission schemes is further investigated. An appropriate IIM-CBF technique is proposed. Simulation results show that when the number of transmit antennas at the base station is equal to the total number of receive antennas of the users, the proposed IIM-CBF algorithm outperforms the existing transmission strategies for FBMC/OQAM-based multi-user MIMO downlink systems. Moreover, we evaluate the performances of the IIM-CBF schemes in the downlink of multi-user MIMO systems and CoMP systems where the total number of receive antennas of users exceeds the number of transmit antennas at the base station. It is observed that by employing the IIM-CBF techniques, FBMC/OQAM systems achieve a similar bit error rate (BER) performance as its orthogonal frequency division multiplexing with the cyclic prefix insertion (CP-OFDM)-based counterpart while exhibiting superiority in terms of a higher

  13. Light-induced resistive switching in silicon-based metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N.; Antonov, I. N.; Kasatkin, A. P.

    2016-05-01

    We have studied light-induced resistive switching in metal-insulator-semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.

  14. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  15. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    SciTech Connect

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  16. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    SciTech Connect

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  17. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    PubMed

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported. PMID:19472638

  18. Computational design of intrinsic molecular rectifiers based on asymmetric functionalization of N-phenylbenzamide

    DOE PAGESBeta

    Ding, Wendu; Koepf, Matthieu; Koenigsmann, Christopher; Batra, Arunabh; Venkataraman, Latha; Negre, Christian F. A.; Brudvig, Gary W.; Crabtree, Robert H.; Schmuttenmaer, Charles A.; Batista, Victor S.

    2015-11-03

    Here, we report a systematic computational search of molecular frameworks for intrinsic rectification of electron transport. The screening of molecular rectifiers includes 52 molecules and conformers spanning over 9 series of structural motifs. N-Phenylbenzamide is found to be a promising framework with both suitable conductance and rectification properties. A targeted screening performed on 30 additional derivatives and conformers of N-phenylbenzamide yielded enhanced rectification based on asymmetric functionalization. We demonstrate that electron-donating substituent groups that maintain an asymmetric distribution of charge in the dominant transport channel (e.g., HOMO) enhance rectification by raising the channel closer to the Fermi level. These findingsmore » are particularly valuable for the design of molecular assemblies that could ensure directionality of electron transport in a wide range of applications, from molecular electronics to catalytic reactions.« less

  19. Computational design of intrinsic molecular rectifiers based on asymmetric functionalization of N-phenylbenzamide

    SciTech Connect

    Ding, Wendu; Koepf, Matthieu; Koenigsmann, Christopher; Batra, Arunabh; Venkataraman, Latha; Negre, Christian F. A.; Brudvig, Gary W.; Crabtree, Robert H.; Schmuttenmaer, Charles A.; Batista, Victor S.

    2015-11-03

    Here, we report a systematic computational search of molecular frameworks for intrinsic rectification of electron transport. The screening of molecular rectifiers includes 52 molecules and conformers spanning over 9 series of structural motifs. N-Phenylbenzamide is found to be a promising framework with both suitable conductance and rectification properties. A targeted screening performed on 30 additional derivatives and conformers of N-phenylbenzamide yielded enhanced rectification based on asymmetric functionalization. We demonstrate that electron-donating substituent groups that maintain an asymmetric distribution of charge in the dominant transport channel (e.g., HOMO) enhance rectification by raising the channel closer to the Fermi level. These findings are particularly valuable for the design of molecular assemblies that could ensure directionality of electron transport in a wide range of applications, from molecular electronics to catalytic reactions.

  20. Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.

    PubMed

    Fu, Wangyang; Xu, Zhi; Bai, Xuedong; Gu, Changzhi; Wang, Enge

    2009-03-01

    We demonstrate the intrinsic memory function of ferroelectric field-effect transistors (FeFETs) based on an integration of individual single-walled carbon nanotubes (SWCNTs) and epitaxial ferroelectric films. In contrast to the previously reported "charge-storage" CNT-FET memories, whose operations are haunted by a lack of control over the "charge traps", the present CNT-FeFETs exhibit a well-defined memory hysteresis loop induced by the reversible remnant polarization of the ferroelectric films. Large memory windows approximately 4 V, data retention time up to 1 week, and ultralow power consumption (energy per bit) of femto-joule, are highlighted in this report. Further simulations and experimental results show that the memory device is valid under operation voltage less than 1 V due to an electric-field enhancement effect induced by the ultrathin SWCNTs. PMID:19206218

  1. Intrinsically tunable bulk acoustic wave resonators based on sol-gel grown PMN-PT films

    NASA Astrophysics Data System (ADS)

    Vorobiev, A.; Spreitzer, M.; Veber, A.; Suvorov, D.; Gevorgian, S.

    2014-08-01

    Intrinsically tunable bulk acoustic wave resonators, based on sol-gel 0.70Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (PMN-PT) thin films, with high effective electromechanical coupling coefficient of 13% and tunability of the series resonance frequency up to 4.0% are fabricated and characterized. The enhanced electroacoustic properties of the PMN-PT resonators are attributed to the mechanism of polarization rotation occurring in the region of the morphotropic phase boundary. Electroacoustic performance of the PMN-PT resonators is analyzed using the theory of dc field-induced piezoelectric effect in ferroelectrics. Extrinsic acoustic loss in the PMN-PT resonators is analyzed using the model of the wave scattering at reflections from rough interfaces. Mechanical Q-factor of the resonators is up to 70 at 4.1 GHz and limited mainly by losses in the PMN-PT film.

  2. Physically-Based Assessment of Intrinsic Groundwater Resource Vulnerability in AN Urban Catchment

    NASA Astrophysics Data System (ADS)

    Graf, T.; Therrien, R.; Lemieux, J.; Molson, J. W.

    2013-12-01

    Several methods exist to assess intrinsic groundwater (re)source vulnerability for the purpose of sustainable groundwater management and protection. However, several methods are empirical and limited in their application to specific types of hydrogeological systems. Recent studies suggest that a physically-based approach could be better suited to provide a general, conceptual and operational basis for groundwater vulnerability assessment. A novel method for physically-based assessment of intrinsic aquifer vulnerability is currently under development and tested to explore the potential of an integrated modelling approach, combining groundwater travel time probability and future scenario modelling in conjunction with the fully integrated HydroGeoSphere model. To determine the intrinsic groundwater resource vulnerability, a fully coupled 2D surface water and 3D variably-saturated groundwater flow model in conjunction with a 3D geological model (GoCAD) has been developed for a case study of the Rivière Saint-Charles (Québec/Canada) regional scale, urban watershed. The model has been calibrated under transient flow conditions for the hydrogeological, variably-saturated subsurface system, coupled with the overland flow zone by taking into account monthly recharge variation and evapotranspiration. To better determine the intrinsic groundwater vulnerability, two independent approaches are considered and subsequently combined in a simple, holistic multi-criteria-decision analyse. Most data for the model comes from an extensive hydrogeological database for the watershed, whereas data gaps have been complemented via field tests and literature review. The subsurface is composed of nine hydrofacies, ranging from unconsolidated fluvioglacial sediments to low permeability bedrock. The overland flow zone is divided into five major zones (Urban, Rural, Forest, River and Lake) to simulate the differences in landuse, whereas the unsaturated zone is represented via the model

  3. Cryptography based on the absorption/emission features of multicolor semiconductor nanocrystal quantum dots

    NASA Astrophysics Data System (ADS)

    Zhou, Ming; Chang, Shoude; Grover, Chander P.

    2004-06-01

    Further to the optical coding based on fluorescent semiconductor quantum dots (QDs), a concept of using mixtures of multiple single-color QDs for creating highly secret cryptograms based on their absorption/emission properties was demonstrated. The key to readout of the optical codes is a group of excitation lights with the predetermined wavelengths programmed in a secret manner. The cryptograms can be printed on the surfaces of different objects such as valuable documents for security purposes.

  4. Intrinsically photosensitive retinal ganglion cells detect light with a vitamin A-based photopigment, melanopsin

    PubMed Central

    Fu, Yingbin; Zhong, Haining; Wang, Min-Hua H.; Luo, Dong-Gen; Liao, Hsi-Wen; Maeda, Hidetaka; Hattar, Samer; Frishman, Laura J.; Yau, King-Wai

    2005-01-01

    In mammals, intrinsically photosensitive retinal ganglion cells (ipRGCs) mediate non-image-forming visual functions such as pupillary light reflex (PLR) and circadian photoentrainment. This photosensitivity requires melanopsin, an invertebrate opsin-like protein expressed by the ipRGCs. The precise role of melanopsin remains uncertain. One suggestion has been that melanopsin may be a photoisomerase, serving to regenerate an unidentified pigment in ipRGCs. This possibility was echoed by a recent report that melanopsin is expressed also in the mouse retinal pigment epithelium (RPE), a key center for regeneration of rod and cone pigments. To address this question, we studied mice lacking RPE65, a protein essential for the regeneration of rod and cone pigments. Rpe65-/- ipRGCs were ≈20- to 40-fold less photosensitive than normal at both single-cell and behavioral (PLR) levels but were rescued by exogenous 9-cis-retinal (an 11-cis-retinal analog), indicating the requirement of a vitamin A-based chromophore for ipRGC photosensitivity. In contrast, 9-cis-retinal was unable to restore intrinsic photosensitivity to melanopsin-ablated ipRGCs, arguing against melanopsin functioning merely in photopigment regeneration. Interestingly, exogenous all-trans-retinal was also able to rescue the low sensitivity of rpe65-/- ipRGCs, suggesting that melanopsin could be a bistable pigment. Finally, we detected no melanopsin in the RPE and no changes in rod and cone sensitivities due to melanopsin ablation. Together, these results strongly suggest that melanopsin is the photopigment in the ipRGCs. PMID:16014418

  5. Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

    PubMed

    Rim, You Seung; Bae, Sang-Hoon; Chen, Huajun; Yang, Jonathan L; Kim, Jaemyung; Andrews, Anne M; Weiss, Paul S; Yang, Yang; Tseng, Hsian-Rong

    2015-12-22

    Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas. Conformal In2O3-based biosensors on ultrathin polyimide films displayed good device performance, low mechanical stress, and highly conformal contact determined using polydimethylsiloxane artificial skin having complex curvilinear surfaces or an artificial eye. Immobilized In2O3 field-effect transistors with self-assembled monolayers of NH2-terminated silanes functioned as pH sensors. Functionalization with glucose oxidase enabled d-glucose detection at physiologically relevant levels. The conformal ultrathin field-effect transistor biosensors developed here offer new opportunities for future wearable human technologies. PMID:26498319

  6. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    SciTech Connect

    Kasherininov, P. G. Tomasov, A. A.

    2008-11-15

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10{sup 6} cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10{sup -2}V/cm{sup 2}, and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  7. Hybrid Solar Cells with Prescribed Nanoscale Morphologies Based onHyperbranched Semiconductor Nanocrystals

    SciTech Connect

    Gur, Ilan; Fromer, Neil A.; Chen, Chih-Ping; Kanaras, AntoniosG.; Alivisatos, A. Paul

    2006-09-09

    In recent years, the search to develop large-area solar cells at low cost has led to research on photovoltaic (PV) systems based on nanocomposites containing conjugated polymers. These composite films can be synthesized and processed at lower costs and with greater versatility than the solid state inorganic semiconductors that comprise today's solar cells. However, the best nanocomposite solar cells are based on a complex architecture, consisting of a fine blend of interpenetrating and percolating donor and acceptor materials. Cell performance is strongly dependent on blend morphology, and solution-based fabrication techniques often result in uncontrolled and irreproducible blends, whose composite morphologies are difficult to characterize accurately. Here we incorporate 3-dimensional hyper-branched colloidal semiconductor nanocrystals in solution-processed hybrid organic-inorganic solar cells, yielding reproducible and controlled nanoscale morphology.

  8. UXO detection and identification based on intrinsic target polarizabilities: A case history

    SciTech Connect

    Gasperikova, E.; Smith, J.T.; Morrison, H.F.; Becker, A.; Kappler, K.

    2008-07-15

    Electromagnetic induction data parameterized in time dependent object intrinsic polarizabilities allow discrimination of unexploded ordnance (UXO) from false targets (scrap metal). Data from a cart-mounted system designed for discrimination of UXO with 20 mm to 155 mm diameters are used. Discrimination of UXO from irregular scrap metal is based on the principal dipole polarizabilities of a target. A near-intact UXO displays a single major polarizability coincident with the long axis of the object and two equal smaller transverse polarizabilities, whereas metal scraps have distinct polarizability signatures that rarely mimic those of elongated symmetric bodies. Based on a training data set of known targets, object identification was made by estimating the probability that an object is a single UXO. Our test survey took place on a military base where both 4.2-inch mortar shells and scrap metal were present. The results show that we detected and discriminated correctly all 4.2-inch mortars, and in that process we added 7%, and 17%, respectively, of dry holes (digging scrap) to the total number of excavations in two different survey modes. We also demonstrated a mode of operation that might be more cost effective than the current practice.

  9. Advances in graphene-based semiconductor photocatalysts for solar energy conversion: fundamentals and materials engineering.

    PubMed

    Xie, Xiuqiang; Kretschmer, Katja; Wang, Guoxiu

    2015-08-28

    Graphene-based semiconductor photocatalysis has been regarded as a promising technology for solar energy storage and conversion. In this review, we summarized recent developments of graphene-based photocatalysts, including preparation of graphene-based photocatalysts, typical key advances in the understanding of graphene functions for photocatalytic activity enhancement and methodologies to regulate the electron transfer efficiency in graphene-based composite photocatalysts, by which we hope to offer enriched information to harvest the utmost fascinating properties of graphene as a platform to construct efficient graphene-based composite photocatalysts for solar-to-energy conversion. PMID:26204442

  10. Mueller based scatterometry and optical characterization of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Muthinti, Gangadhara Raja

    Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete information about the optical reflection and transmission of polarized light reflected from a sample. MM is a 4x4 transformation matrix (16 elements) describing the change in the intensities of incident polarized light expressed by means of a Stokes Vector. The symmetry properties associated with MM provide an excellent means of measuring and understanding the topography of the periodic nanostructures. Topography here refers to uniformity of the periodic order of arrayed structure. The advantage of MMS over traditional SE Scatterometry is the ability of MMS to measure samples that have anisotropic optical properties and depolarize light. The present work focuses on understanding the Mueller based Scatterometry with respect to other methodologies by a systematic approach. Several laterally complex nano-scale structures with dimensions in the order of nanometers were designed and fabricated using e-beam lithography. Also Mueller based analysis was used to extract profile information and anisotropy coefficients of complex 3D FinFET, SOI fin grating structures. Later, Spectroscopic Mueller matrix (all 16 elements) and SE data were collected in planar diffraction mode for the samples using a J.A. Woollam RC2(TM) Spectroscopic Ellipsometer. Nano

  11. Structure-based Inhibitor Design for the Intrinsically Disordered Protein c-Myc

    PubMed Central

    Yu, Chen; Niu, Xiaogang; Jin, Fan; Liu, Zhirong; Jin, Changwen; Lai, Luhua

    2016-01-01

    Intrinsically disordered proteins (IDPs) are associated with various diseases and have been proposed as promising drug targets. However, conventional structure-based approaches cannot be applied directly to IDPs, due to their lack of ordered structures. Here, we describe a novel computational approach to virtually screen for compounds that can simultaneously bind to different IDP conformations. The test system used c-Myc, an oncoprotein containing a disordered basic helix-loop-helix-leucine zipper (bHLH-LZ) domain that adopts a helical conformation upon binding to Myc-associated factor X (Max). For the virtual screen, we used three binding pockets in representative conformations of c-Myc370–409, which is part of the disordered bHLH-LZ domain. Seven compounds were found to directly bind c-Myc370–409 in vitro, and four inhibited the growth of the c-Myc-overexpressing cells by affecting cell cycle progression. Our approach of IDP conformation sampling, binding site identification, and virtual screening for compounds that can bind to multiple conformations provides a useful strategy for structure-based drug discovery targeting IDPs. PMID:26931396

  12. Analytical modelling of a refractive index sensor based on an intrinsic micro Fabry-Perot interferometer.

    PubMed

    Vargas-Rodriguez, Everardo; Guzman-Chavez, Ana D; Cano-Contreras, Martin; Gallegos-Arellano, Eloisa; Jauregui-Vazquez, Daniel; Hernández-García, Juan C; Estudillo-Ayala, Julian M; Rojas-Laguna, Roberto

    2015-01-01

    In this work a refractive index sensor based on a combination of the non-dispersive sensing (NDS) and the Tunable Laser Spectroscopy (TLS) principles is presented. Here, in order to have one reference and one measurement channel a single-beam dual-path configuration is used for implementing the NDS principle. These channels are monitored with a couple of identical optical detectors which are correlated to calculate the overall sensor response, called here the depth of modulation. It is shown that this is useful to minimize drifting errors due to source power variations. Furthermore, a comprehensive analysis of a refractive index sensing setup, based on an intrinsic micro Fabry-Perot Interferometer (FPI) is described. Here, the changes over the FPI pattern as the exit refractive index is varied are analytically modelled by using the characteristic matrix method. Additionally, our simulated results are supported by experimental measurements which are also provided. Finally it is shown that by using this principle a simple refractive index sensor with a resolution in the order of 2.15 × 10(-4) RIU can be implemented by using a couple of standard and low cost photodetectors. PMID:26501277

  13. Analytical Modelling of a Refractive Index Sensor Based on an Intrinsic Micro Fabry-Perot Interferometer

    PubMed Central

    Vargas-Rodriguez, Everardo; Guzman-Chavez, Ana D.; Cano-Contreras, Martin; Gallegos-Arellano, Eloisa; Jauregui-Vazquez, Daniel; Hernández-García, Juan C.; Estudillo-Ayala, Julian M.; Rojas-Laguna, Roberto

    2015-01-01

    In this work a refractive index sensor based on a combination of the non-dispersive sensing (NDS) and the Tunable Laser Spectroscopy (TLS) principles is presented. Here, in order to have one reference and one measurement channel a single-beam dual-path configuration is used for implementing the NDS principle. These channels are monitored with a couple of identical optical detectors which are correlated to calculate the overall sensor response, called here the depth of modulation. It is shown that this is useful to minimize drifting errors due to source power variations. Furthermore, a comprehensive analysis of a refractive index sensing setup, based on an intrinsic micro Fabry-Perot Interferometer (FPI) is described. Here, the changes over the FPI pattern as the exit refractive index is varied are analytically modelled by using the characteristic matrix method. Additionally, our simulated results are supported by experimental measurements which are also provided. Finally it is shown that by using this principle a simple refractive index sensor with a resolution in the order of 2.15 × 10−4 RIU can be implemented by using a couple of standard and low cost photodetectors. PMID:26501277

  14. Structure-based Inhibitor Design for the Intrinsically Disordered Protein c-Myc.

    PubMed

    Yu, Chen; Niu, Xiaogang; Jin, Fan; Liu, Zhirong; Jin, Changwen; Lai, Luhua

    2016-01-01

    Intrinsically disordered proteins (IDPs) are associated with various diseases and have been proposed as promising drug targets. However, conventional structure-based approaches cannot be applied directly to IDPs, due to their lack of ordered structures. Here, we describe a novel computational approach to virtually screen for compounds that can simultaneously bind to different IDP conformations. The test system used c-Myc, an oncoprotein containing a disordered basic helix-loop-helix-leucine zipper (bHLH-LZ) domain that adopts a helical conformation upon binding to Myc-associated factor X (Max). For the virtual screen, we used three binding pockets in representative conformations of c-Myc370-409, which is part of the disordered bHLH-LZ domain. Seven compounds were found to directly bind c-Myc370-409 in vitro, and four inhibited the growth of the c-Myc-overexpressing cells by affecting cell cycle progression. Our approach of IDP conformation sampling, binding site identification, and virtual screening for compounds that can bind to multiple conformations provides a useful strategy for structure-based drug discovery targeting IDPs. PMID:26931396

  15. Improved design of a polarization converter based on semiconductor optical waveguide bends.

    PubMed

    Obayya, S S; Rahman, B M; Grattan, K T; El-Mikati, H A

    2001-10-20

    By using an efficient vector finite-element-based beam-propagation method, we present an improved design of a polarization converter. This design relies on the use of a single-section deeply etched bent semiconductor waveguide with slanted sidewalls. By careful adjustment of the bend radius, the waveguide width, and the sidewall angle we obtained a nearly 100% polarization conversion ratio with no appreciable radiation loss and a bending angle of less than 180 degrees . PMID:18364819

  16. Microwave photonic phase shifter based on birefringence effects in a semiconductor optical amplifier.

    PubMed

    Chen, Han; Sun, Mingming; Ding, Yi; Sun, Xiaohan

    2013-09-01

    A continuously tunable microwave photonic (MWP) phase shifter based on birefringence effects in a semiconductor optical amplifier (SOA) is presented and the theoretical fundamentals of the design are explained. This proposed device provides a high efficiency phase-shift tuning range beyond 2π rad by controlling the SOA launch power. A prototype of the MWP phase shifter with a frequency of 10 GHz and 2π rad tuning range is experimentally demonstrated. PMID:23988932

  17. Retinal Stimulation on Rabbit Using Complementary Metal Oxide Semiconductor Based Multichip Flexible Stimulator toward Retinal Prosthesis

    NASA Astrophysics Data System (ADS)

    Tokuda, Takashi; Asano, Ryosuke; Sugitani, Sachie; Taniyama, Mari; Terasawa, Yasuo; Nunoshita, Masahiro; Nakauchi, Kazuaki; Fujikado, Takashi; Tano, Yasuo; Ohta, Jun

    2008-04-01

    The Functionality of a complementary metal oxide semiconductor (CMOS) LSI-based, multichip flexible retinal stimulator was demonstrated in retinal stimulation experiments on rabbits. A 1×4-configured multichip stimulator was fabricated for application to experiments on animals. An experimental procedure including surgical operations was developed, and retinal stimulation was performed with the fabricated multichip stimulator. Neural responses on the visual cortex were successfully evoked by the fabricated stimulator. The stimulator is confirmed to be applicable to acute animal experiments.

  18. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  19. Experimental characterization of semiconductor-based thermal neutron detectors

    NASA Astrophysics Data System (ADS)

    Bedogni, R.; Bortot, D.; Pola, A.; Introini, M. V.; Lorenzoli, M.; Gómez-Ros, J. M.; Sacco, D.; Esposito, A.; Gentile, A.; Buonomo, B.; Palomba, M.; Grossi, A.

    2015-04-01

    In the framework of NESCOFI@BTF and NEURAPID projects, active thermal neutron detectors were manufactured by depositing appropriate thickness of 6LiF on commercially available windowless p-i-n diodes. Detectors with different radiator thickness, ranging from 5 to 62 μm, were manufactured by evaporation-based deposition technique and exposed to known values of thermal neutron fluence in two thermal neutron facilities exhibiting different irradiation geometries. The following properties of the detector response were investigated and presented in this work: thickness dependence, impact of parasitic effects (photons and epithermal neutrons), linearity, isotropy, and radiation damage following exposure to large fluence (in the order of 1012 cm-2).

  20. ZnCdMgSe-Based Semiconductors for Intersubband Devices

    SciTech Connect

    Tamargo, Maria C.

    2008-11-13

    This paper presents a review of recent results on the application of ZnCdMgSe-based wide bandgap II-VI compounds to intersubband devices such as quantum cascade lasers and quantum well infrared photodetectors operating in the mid-infrared region. The conduction band offset of ZnCdSe/ZnCdMgSe quantum well structures was determined from contactless electroreflectance measurements to be as high as 1.12 eV. FT-IR was used to measure intersubband absorption in multi-quantum well structures in the mid-IR range. Electroluminescence at 4.8 {mu}m was observed from a quantum cascade emitter structure made from these materials. Preliminary results are also presented on self assembled quantum dots of CdSe on ZnCdMgSe, and novel quantum well structures with metastable binary MgSe barriers.

  1. Silicon-based semimetals and semiconductors for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Sun, Hui

    The direct conversion between heat and electricity can be achieved by thermoelectric devices. Thus, thermoelectricity is considered as not only an environmentally friendly substitute for compressor-based refrigerators but also a promising energy solution to harvest waste heat. State-of-the-art thermoelectric materials are often comprised of expensive tellurium or germanium elements and hence are hardly suitable for mass production. The silicon-based thermoelectrics, e.g. semimetallic CoSi and semiconducting beta -FeSi2 materials we study here, are composed of abundant elements in nature. They are also chemically stable, non-toxic, and mechanically robust. Despite the above benefits, they exhibit relatively lower efficiencies compared to state-of-the-art materials. In this dissertation, we have intended to understand the thermal and electrical transport in these materials and enhance their thermoelectric performance. CoSi possesses one of the highest power factors among thermoelectrics due to the sharp features around the Fermi level in its electronic density of states. In order to improve the performance, the effects of p-type dopants, isoelectronic substitutions, n-type dopants, and double doping were systematically studied for arc-melted CoSi samples. The results show that p-type dopants like iron and gallium and n-type dopants like nickel and palladium deteriorate the electrical properties due to the introduction of excess holes and electrons, respectively. Boron and platinum have very limited solubility in CoSi and the segregated impurity phases at grain boundaries are helpful to improve the electrical properties. The isoelectronic substitutions influence the power factor slightly; however, they result in a drastic decrease in the lattice thermal conductivity and hence an enhancement in the figure of merit. In addition, CoSi samples prepared by powder processing were investigated to further reduce the lattice thermal conductivity. Unfortunately, all the

  2. Multiple Exciton Generation in Semiconductor Nanostructures: DFT-based Computation

    NASA Astrophysics Data System (ADS)

    Mihaylov, Deyan; Kryjevski, Andrei; Kilin, Dmitri; Kilina, Svetlana; Vogel, Dayton

    Multiple exciton generation (MEG) in nm-sized H-passivated Si nanowires (NWs), and quasi 2D nanofilms depends strongly on the degree of the core structural disorder as shown by the perturbation theory calculations based on the DFT simulations. In perturbation theory, we work to the 2nd order in the electron-photon coupling and in the (approximate) RPA-screened Coulomb interaction. We also include the effect of excitons for which we solve Bethe-Salpeter Equation. To describe MEG we calculate exciton-to-biexciton as well as biexciton-to-exciton rates and quantum efficiency (QE). We consider 3D arrays of Si29H36 quantum dots, NWs, and quasi 2D silicon nanofilms, all with both crystalline and amorphous core structures. Efficient MEG with QE of 1.3 up to 1.8 at the photon energy of about 3Egap is predicted in these nanoparticles except for the crystalline NW and film where QE ~=1. MEG in the amorphous nanoparticles is enhanced by the electron localization due to structural disorder. The exciton effects significantly red-shift QE vs. photon energy curves. Nm-sized a-Si NWs and films are predicted to have effective MEG within the solar spectrum range. Also, we find efficient MEG in the chiral single-wall Carbon nanotubes and in a perovskite nanostructure.

  3. Elucidation of intrinsic biosynthesis yields using 13C-based metabolism analysis

    PubMed Central

    2014-01-01

    This paper discusses the use of 13C-based metabolism analysis for the assessment of intrinsic product yields — the actual carbon contribution from a single carbon substrate to the final product via a specific biosynthesis route — in the following four cases. First, undefined nutrients (such as yeast extract) in fermentation may contribute significantly to product synthesis, which can be quantified through an isotopic dilution method. Second, product and biomass synthesis may be dependent on the co-metabolism of multiple-carbon sources. 13C labeling experiments can track the fate of each carbon substrate in the cell metabolism and identify which substrate plays a main role in product synthesis. Third, 13C labeling can validate and quantify the contribution of the engineered pathway (versus the native pathway) to the product synthesis. Fourth, the loss of catabolic energy due to cell maintenance (energy used for functions other than production of new cell components) and low P/O ratio (Phosphate/Oxygen Ratio) significantly reduces product yields. Therefore, 13C-metabolic flux analysis is needed to assess the influence of suboptimal energy metabolism on microbial productivity, and determine how ATP/NAD(P)H are partitioned among various cellular functions. Since product yield is a major determining factor in the commercialization of a microbial cell factory, we foresee that 13C-isotopic labeling experiments, even without performing extensive flux calculations, can play a valuable role in the development and verification of microbial cell factories. PMID:24642094

  4. Colorimetric detection of Shewanella oneidensis based on immunomagnetic capture and bacterial intrinsic peroxidase activity

    PubMed Central

    Wen, Junlin; Zhou, Shungui; Chen, Junhua

    2014-01-01

    Rapid detection and enumeration of target microorganisms is considered as a powerful tool for monitoring bioremediation process that typically involves cleaning up polluted environments with functional microbes. A novel colorimetric assay is presented based on immunomagnetic capture and bacterial intrinsic peroxidase activity for rapidly detecting Shewanella oneidensis, an important model organism for environmental bioremediation because of its remarkably diverse respiratory abilities. Analyte bacteria captured on the immunomagnetic beads provided a bacterial out-membrane peroxidase-amplified colorimetric readout of the immunorecognition event by oxidizing 3, 3′, 5, 5′-tetramethylbenzidine (TMB) in the present of hydrogen peroxide. The high-efficiency of immunomagnetic capture and signal amplification of peroxidase activity offers an excellent detection performance with a wide dynamic range between 5.0 × 103 and 5.0 × 106 CFU/mL toward target cells. Furthermore, this method was demonstrated to be feasible in detecting S. oneidensis cells spiked in environmental samples. The proposed colorimetric assay shows promising environmental applications for rapid detection of target microorganisms. PMID:24898751

  5. Microfluidic separation of viruses from blood cells based on intrinsic transport processes

    PubMed Central

    Zhao, Chao; Cheng, Xuanhong

    2011-01-01

    Clinical analysis of acute viral infection in blood requires the separation of viral particles from blood cells, since the cytoplasmic enzyme inhibits the subsequent viral detection. To facilitate this procedure in settings without access to a centrifuge, we present a microfluidic device to continuously purify bionanoparticles from cells based on their different intrinsic movements on the microscale. In this device, a biological sample is layered on top of a physiological buffer, and both fluids are transported horizontally at the same flow rate in a straight channel under laminar flow. While the micron sized particles such as cells sediment to the bottom layer with a predictable terminal velocity, the nanoparticles move vertically by diffusion. As their vertical travel distances have a different dependence on time, the micro- and nanoparticles can preferentially reside in the bottom and top layers respectively after certain residence time, yielding purified viruses. We first performed numerical analysis to predicate the particle separation and then tested the theory using suspensions of synthetic particles and biological samples. The experimental results using dilute synthetic particles closely matched the numerical analysis of a two layer flow system containing different sized particles. Similar purification was achieved using diluted blood spiked with human immunodeficiency virus. However, viral purification in whole blood is compromised due to extensive bioparticle collisions. With the parallelization and automation potential offered by microfluidics, this device has the potential to function as an upstream sample preparation module to continuously provide cell depleted bio-nanoparticles for downstream analysis. PMID:22007267

  6. Colorimetric detection of Shewanella oneidensis based on immunomagnetic capture and bacterial intrinsic peroxidase activity

    NASA Astrophysics Data System (ADS)

    Wen, Junlin; Zhou, Shungui; Chen, Junhua

    2014-06-01

    Rapid detection and enumeration of target microorganisms is considered as a powerful tool for monitoring bioremediation process that typically involves cleaning up polluted environments with functional microbes. A novel colorimetric assay is presented based on immunomagnetic capture and bacterial intrinsic peroxidase activity for rapidly detecting Shewanella oneidensis, an important model organism for environmental bioremediation because of its remarkably diverse respiratory abilities. Analyte bacteria captured on the immunomagnetic beads provided a bacterial out-membrane peroxidase-amplified colorimetric readout of the immunorecognition event by oxidizing 3, 3', 5, 5'-tetramethylbenzidine (TMB) in the present of hydrogen peroxide. The high-efficiency of immunomagnetic capture and signal amplification of peroxidase activity offers an excellent detection performance with a wide dynamic range between 5.0 × 103 and 5.0 × 106 CFU/mL toward target cells. Furthermore, this method was demonstrated to be feasible in detecting S. oneidensis cells spiked in environmental samples. The proposed colorimetric assay shows promising environmental applications for rapid detection of target microorganisms.

  7. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  8. Understanding the Influence of Intrinsic and Extrinsic Factors on Inquiry-Based Science Education at Township Schools in South Africa

    ERIC Educational Resources Information Center

    Ramnarain, Umesh

    2016-01-01

    This mixed-methods research investigated teachers' perceptions of intrinsic factors (personal attributes of the teacher) and extrinsic factors (environmental) influencing the implementation of inquiry-based science learning at township (underdeveloped urban area) high schools in South Africa. Quantitative data were collected by means of an adapted…

  9. Graphene-based half-metal and spin-semiconductor for spintronic applications

    NASA Astrophysics Data System (ADS)

    Qi, Jingshan; Chen, Xiaofang; Hu, Kaige; Feng, Ji

    2016-03-01

    In this letter we propose a strategy to make graphene become a half-metal or spin-semiconductor by combining the magnetic proximity effects and sublattice symmetry breaking in graphone/graphene and graphone/graphene/BN heterostructures. Exchange interactions lift the spin degeneracy and sublattice symmetry breaking opens a band gap in graphene. More interestingly, the gap opening depends on the spin direction and the competition between the sublattice asymmetry and exchange field determines the system is a half-metal or a spin-semiconductor. By first-principles calculations and a low-energy effective model analysis, we elucidate the underlying physical mechanism of spin-dependent gap opening and spin degeneracy splitting. This offers an alternative practical platform for graphene-based spintronics.

  10. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaolong; Chen, Liang; He, Yongning; Liu, Jinliang; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting; Zhang, Zhongbing; Ouyang, Xiaoping

    2016-04-01

    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 1013 Ω cm due to the compensation of the donor defects (VO) and acceptor defects (VZn and Oi) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  11. Anisotropy of the electron g factor in quantum wells based on cubic semiconductors

    SciTech Connect

    Alekseev, P. S.

    2013-09-15

    A new mechanism for the spin splitting of electron levels in asymmetric quantum wells based on GaAs-type semiconductors relative to rotations of the magnetic field in the well plane is suggested. It is demonstrated that the anisotropy of the Zeeman splitting (linear in a magnetic field) arises in asymmetric quantum wells due to the interface spin-orbit terms in the electron Hamiltonian. In the case of symmetric quantum wells, it is shown that the anisotropy of the Zeeman splitting is a cubic function of the magnitude of the magnetic field, depends on the direction of the magnetic field in the interface plane as the fourth-order harmonic, and is governed by the spin-orbit term of the fourth order by the kinematic momentum in the electron Hamiltonian of a bulk semiconductor.

  12. Nonlinear-microscopy optical-pulse sources based on mode-locked semiconductor lasers.

    PubMed

    Yokoyama, H; Sato, A; Guo, H-C; Sato, K; Mure, M; Tsubokawa, H

    2008-10-27

    We developed picosecond optical-pulse sources suitable for multiphoton microscopy based on mode-locked semiconductor lasers. Using external-cavity geometry, stable hybrid mode locking was achieved at a repetition rate of 500 MHz. Semiconductor optical amplifiers driven by synchronized electric pulses reached subharmonic optical-pulse repetition rates of 1-100 MHz. Two-stage Yb-doped fiber amplifiers produced optical pulses of 2 ps duration, with a peak power of a few kilowatts at a repetition rate of 10 MHz. These were employed successfully for nonlinear-optic bio-imaging using two-photon fluorescence, second-harmonic generation, and sum-frequency generation of synchronized two-color pulses. PMID:18958056

  13. Graphene-based half-metal and spin-semiconductor for spintronic applications.

    PubMed

    Qi, Jingshan; Chen, Xiaofang; Hu, Kaige; Feng, Ji

    2016-03-31

    In this letter we propose a strategy to make graphene become a half-metal or spin-semiconductor by combining the magnetic proximity effects and sublattice symmetry breaking in graphone/graphene and graphone/graphene/BN heterostructures. Exchange interactions lift the spin degeneracy and sublattice symmetry breaking opens a band gap in graphene. More interestingly, the gap opening depends on the spin direction and the competition between the sublattice asymmetry and exchange field determines the system is a half-metal or a spin-semiconductor. By first-principles calculations and a low-energy effective model analysis, we elucidate the underlying physical mechanism of spin-dependent gap opening and spin degeneracy splitting. This offers an alternative practical platform for graphene-based spintronics. PMID:26933773

  14. Expanding the Scope of Thiophene Based Semiconductors: Perfluoroalkylated Materials and Fused Thienoacenes

    NASA Astrophysics Data System (ADS)

    Black, Hayden Thompson

    Thiophene based semiconductors with new molecular and macromolecular structures were explored for applications in field effect transistors. Perfluoroalkylation was studied both as a means for controlling the self-assembly properties of polythiophenes, as well as modifying the molecular orbital energies of a series of oligothiophenes. End-perfluoroalkylation of poly(3-hexylthiophene) resulted in interesting self-assembly of the polymer into a bilayer vesicle. Similar fluorophilic assembly may be useful for controlling blend morphologies in heterojunction based devices. On the other hand, perfluoroalkylation of small molecule thiophene semiconductors leads to low lying LUMO levels, and can be used to promote electron injection for n-type transistor devices. This strategy was employed in combination with a pi-electron deficient benzothiadiazole to afford a new n-type semiconductor with an exceptionally low LUMO. Monoperfluoroalkylated oligothiophenes were also synthesized and studied in field effect transistors for the first time. In addition, two new fused thienoacene compounds were synthesized and their crystal structures were analyzed. The fused compounds showed exceptional pi-pi stacking and assembled into well defined one-dimensional microcrystals from the vapor phase. Field effect transistors were fabricated employing the new thienoacenes, showing p-type conductivity with equivalent charge carrier mobilities.

  15. Far- and Deep-UV Spectroscopy of Semiconductor Nanoparticles Measured Based on Attenuated Total Reflectance spectroscopy.

    PubMed

    Tanabe, Ichiro; Yamada, Yosuke; Ozaki, Yukihiro

    2016-02-16

    Far- and deep-ultraviolet spectra (150-300 nm) of semiconductor nanoparticles (zinc oxide and zinc sulfide) are successfully measured by using attenuated total reflectance (ATR) spectroscopy, and analyzed using finite-difference time-domain (FDTD) simulations. The obtained spectra show good consistency with earlier synchrotron-radiation spectra and with theoretical calculations. The FDTD simulation results show that the present system collected the correct spectra. In the present system, the obtained spectra are affected by the real part n of the complex refractive index more strongly than the imaginary part k. It is also revealed both experimentally and theoretically that spectral intensities of the semiconductor nanoparticles are approximately one tenth those of liquid samples. These results provide insights into the far- and deep-ultraviolet spectroscopy based on the ATR system, and show the general applicability of our original ATR spectroscopy to semiconductor nanoparticles. The system needs neither high vacuum nor much space, and enables rapid and systematic investigation of the electronic states of various materials. PMID:26691240

  16. Figures of merit for microwave photonic phase shifters based on semiconductor optical amplifiers.

    PubMed

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2012-05-01

    We theoretically and experimentally compare the performance of two fully tunable phase shifter structures based on semiconductor optical amplifiers (SOA) by means of several figures of merit common to microwave photonic systems. A single SOA stage followed by a tailored notch filter is compared with a cascaded implementation comprising three SOA-based phase shifter stages. Attention is focused on the assessment of the RF net gain, noise figure and nonlinear distortion. Recommendations on the performance optimization of this sort of approaches are detailed. PMID:22565677

  17. THz semiconductor-based front-end receiver technology for space applications

    NASA Technical Reports Server (NTRS)

    Mehdi, Imran; Siegel, Peter

    2004-01-01

    Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

  18. Imaging performance comparison between a LaBr{sub 3}:Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera

    SciTech Connect

    Russo, P.; Mettivier, G.; Pani, R.; Pellegrini, R.; Cinti, M. N.; Bennati, P.

    2009-04-15

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr{sub 3}:Ce scintillator continuous crystal (49x49x5 mm{sup 3}) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14x14x1 mm{sup 3}) with 256x256 square pixels and a pitch of 55 {mu}m, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 {mu}m, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  19. Extracting Intrinsic Functional Networks with Feature-Based Group Independent Component Analysis

    ERIC Educational Resources Information Center

    Calhoun, Vince D.; Allen, Elena

    2013-01-01

    There is increasing use of functional imaging data to understand the macro-connectome of the human brain. Of particular interest is the structure and function of intrinsic networks (regions exhibiting temporally coherent activity both at rest and while a task is being performed), which account for a significant portion of the variance in…

  20. Achievement-Based Rewards and Intrinsic Motivation: A Test of Cognitive Mediators

    ERIC Educational Resources Information Center

    Cameron, Judy; Pierce, W. David; Banko, Katherine M.; Gear, Amber

    2005-01-01

    This study assessed how rewards impacted intrinsic motivation when students were rewarded for achievement while learning an activity, for performing at a specific level on a test, or for both. Undergraduate university students engaged in a problem-solving activity. The design was a 2 * 2 factorial with 2 levels of reward in a learning phase…

  1. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    NASA Astrophysics Data System (ADS)

    Shen, Haoting

    conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance

  2. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    NASA Astrophysics Data System (ADS)

    Shen, Haoting

    conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance

  3. Noble metal-free hydrogen-evolving photocathodes based on small molecule organic semiconductors.

    PubMed

    Morozan, A; Bourgeteau, T; Tondelier, D; Geffroy, B; Jousselme, B; Artero, V

    2016-09-01

    Organic semiconductors have great potential for producing hydrogen in a sustainable and economically-viable manner because they rely on readily available materials with highly tunable properties. We demonstrate here the relevance of heterojunctions to the construction of H2-evolving photocathodes, exclusively based on earth-abundant elements. Boron subnaphthalocyanine chloride proved a very promising acceptor in that perspective. It absorbs a part of the solar spectrum complementary to α-sexithiophene as a donor, thus generating large photocurrents and providing a record onset potential for light-driven H2 evolution under acidic aqueous conditions using a nanoparticulate amorphous molybdenum sulfide catalyst. PMID:27455142

  4. Noble metal-free hydrogen-evolving photocathodes based on small molecule organic semiconductors

    NASA Astrophysics Data System (ADS)

    Morozan, A.; Bourgeteau, T.; Tondelier, D.; Geffroy, B.; Jousselme, B.; Artero, V.

    2016-09-01

    Organic semiconductors have great potential for producing hydrogen in a sustainable and economically-viable manner because they rely on readily available materials with highly tunable properties. We demonstrate here the relevance of heterojunctions to the construction of H2-evolving photocathodes, exclusively based on earth-abundant elements. Boron subnaphthalocyanine chloride proved a very promising acceptor in that perspective. It absorbs a part of the solar spectrum complementary to α-sexithiophene as a donor, thus generating large photocurrents and providing a record onset potential for light-driven H2 evolution under acidic aqueous conditions using a nanoparticulate amorphous molybdenum sulfide catalyst.

  5. Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology.

    PubMed

    Li, Jingsi; Wang, Huan; Chen, Xiangfei; Yin, Zuowei; Shi, Yuechun; Lu, Yanqing; Dai, Yitang; Zhu, Hongliang

    2009-03-30

    In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology. PMID:19333287

  6. Ultrafast all-optical NOR gate based on semiconductor optical amplifier and fiber delay interferometer

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Zhang, Xinliang; Liu, Deming; Huang, Dexiu

    2006-10-01

    An ultrafast all-optical logic NOR gate based on a semiconductor optical amplifier (SOA) and a fiber delay interferometer (FDI) is presented. For high-speed input return-to-zero (RZ) signal, nonreturn-to-zero (NRZ) switching windows which satisfy Boolean NOR operation can be formed by properly choosing the delay time and the phase shift of FDI. 40Gb/s NOR operation has been demonstrated successfully with low control optical power. The factors that degrade the NOR operation have been discussed.

  7. Electronic modification of Cu-based chalcopyrite semiconductors induced by lattice deformation and composition alchemy

    NASA Astrophysics Data System (ADS)

    Jiang, F. D.; Feng, J. Y.

    2008-02-01

    Using first principles calculation, we systematically investigate the electronic modification of Cu-based chalcopyrite semiconductors induced by lattice deformation and composition alchemy. It is shown that the optical band gap Eg is remarkably sensitive to the anion displacement μ, resulting from the opposite shifts of conduction band minimum and valence band maximum. Meanwhile, the dependence of structural parameters of alloyed compounds on alloy composition x is demonstrated for both cation and anion alloying. The d orbitals of group-III cations are found to be of great importance in the calculation. Abnormal changes in the optical band gap Eg induced by anion alloying are addressed.

  8. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    SciTech Connect

    Herzog, Bastian Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W.

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  9. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1994-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  10. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1995-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  11. Combining highly multiplexed PCR with semiconductor-based sequencing for rapid cancer genotyping.

    PubMed

    Beadling, Carol; Neff, Tanaya L; Heinrich, Michael C; Rhodes, Katherine; Thornton, Michael; Leamon, John; Andersen, Mark; Corless, Christopher L

    2013-03-01

    There is growing demand for routine identification of actionable mutations in clinical cancer specimens. Genotyping platforms must provide rapid turnaround times and work effectively with limited amounts of formalin-fixed, paraffin-embedded (FFPE) tissue specimens that often yield poor quality DNA. We describe semiconductor-based sequencing of DNA from FFPE specimens using a single-tube, multiplexed panel of 190 amplicons targeting 46 cancer genes. With just 10 ng of input DNA, average read depths of 2000× can be obtained in 48 hours, with >95% of the reads on target. A validation set of 45 FFPE tumor specimens containing 53 point mutations previously identified with a mass spectrometry-based genotyping platform, along with 19 indels ranging from 4 to 63 bp, was used to evaluate assay performance. With a mutant allele ratio cutoff of 8%, we were able to achieve 100% sensitivity (95% CI = 97.3% to 100.0%) and 95.1% specificity (95% CI = 91.8% to 98.0%) of point mutation detection. All indels were visible by manual inspection of aligned reads; 6/9 indels ≤12 bp long were detected by the variant caller software either exactly or as mismatched nucleotides within the indel region. The rapid turnaround time and low input DNA requirements make the multiplex PCR and semiconductor-based sequencing approach a viable option for mutation detection in a clinical laboratory. PMID:23274167

  12. High speed all-optical data processing in fast semiconductor and optical fiber based devices

    NASA Astrophysics Data System (ADS)

    Sun, Hongzhi

    Future generations of communication systems demand ultra high speed data processing and switching components. Conventional electrical parts have reached their bottleneck both speed-wise and efficiency-wise. The idea of manipulating high speed data in optical domain is gaining more popularity. In this PhD thesis work, we proposed and demonstrated various schemes of all-optical Boolean logic gate at data rate as high as 80Gb/s by using semiconductor optical amplifier (SOA), SOA Mach-Zehnder interferometer (SOA-MZI), highly nonlinear fiber (HNLF) and optical fiber based components. With the invention of quantum dot (QD) based semiconductor devices, speed limit of all optical data processing has a chance to boost up to 250Gb/s. We proposed and simulated QD-SOA based Boolean functions, and their application such as shift register and pseudorandom bit sequence generation (PRBS). Clock and data recovery of high speed data signals has been simulated and demonstrated by injection lock and phase lock loop techniques in a fiber and SOA ring and an optical-electrical (OE) feedback loop.

  13. A new metal-organic hybrid material with intrinsic resistance-based bistability: monitoring in situ room temperature switching behavior

    SciTech Connect

    Zhang, Zhongyue; Zhao, Hanhua; Matsushita, Michio M.; Awaga, Kunio; Dunbar, Kim R.

    2014-08-06

    Two new silver containing materials with TCNQ derivatives were prepared by electrocrystallization. Synchrotron radiation diffraction studies were conducted to determine the structures of the new phases which exhibit unprecedented high room temperature conductivity. The I–V characteristics reveal a room-temperature switching behaviour and memory effect based on intrinsic negative differential resistance (NDR). EPR spectroscopic measurements performed under an applied electric field indicate a g-tensor shift that is correlated to the amplitude of current.

  14. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  15. Imitation learning based on an intrinsic motivation mechanism for efficient coding

    PubMed Central

    Triesch, Jochen

    2013-01-01

    A hypothesis regarding the development of imitation learning is presented that is rooted in intrinsic motivations. It is derived from a recently proposed form of intrinsically motivated learning (IML) for efficient coding in active perception, wherein an agent learns to perform actions with its sense organs to facilitate efficient encoding of the sensory data. To this end, actions of the sense organs that improve the encoding of the sensory data trigger an internally generated reinforcement signal. Here it is argued that the same IML mechanism might also support the development of imitation when general actions beyond those of the sense organs are considered: The learner first observes a tutor performing a behavior and learns a model of the the behavior's sensory consequences. The learner then acts itself and receives an internally generated reinforcement signal reflecting how well the sensory consequences of its own behavior are encoded by the sensory model. Actions that are more similar to those of the tutor will lead to sensory signals that are easier to encode and produce a higher reinforcement signal. Through this, the learner's behavior is progressively tuned to make the sensory consequences of its actions match the learned sensory model. I discuss this mechanism in the context of human language acquisition and bird song learning where similar ideas have been proposed. The suggested mechanism also offers an account for the development of mirror neurons and makes a number of predictions. Overall, it establishes a connection between principles of efficient coding, intrinsic motivations and imitation. PMID:24204350

  16. Cyclopentadithiophene-Based Organic Semiconductors: Effect of Fluorinated Substituents on Electrochemical and Charge Transport Properties

    SciTech Connect

    Reddy, J. Sreedhar; Kale, Tejaswini; Balaji, Ganapathy; Chandrasekaran, A.; Thayumanavan, S.

    2011-03-17

    Thiophene-based semiconductors are often hole conductors that have been converted to electron-transporting materials by incorporation of electron-withdrawing groups at terminal positions, such as fluorinated substituents. This conversion of an otherwise p-type material to n-type material is often attributed to the lowering of the lowest unoccupied molecular orbital (LUMO) energy level due to the increased electron affinity in the molecule. Yet, it is not clear if lowering of LUMO energy level is a sufficient condition for yielding n-type material. Herein, we report small-molecule semiconductors based on cyclopentadithiophene (CPD), which can be orthogonally functionalized at two different positions, which allows us to tune the frontier orbital energy levels. We find that simply lowering the LUMO energy level, without inclusion of fluoro groups, does not result in conversion of the otherwise p-type material to n-type material, whereas incorporation of fluorinated substituents does. This indicates that charge transport behavior is not an exclusive function of the frontier orbital energy levels.

  17. Web-based interactive educational software introducing semiconductor laser dynamics: Sound of Lasers (SOL)

    NASA Astrophysics Data System (ADS)

    Consoli, Antonio; Sanchez, Jorge R.; Horche, Paloma R.; Esquivias, Ignacio

    2014-07-01

    presented. The proposed tool is addressed to the students of optical communication courses, encouraging self consolidation of the subjects learned in lectures. The semiconductor laser model is based on the well known rate equations for the carrier density, photon density and optical phase. The direct modulation of the laser is considered with input parameters which can be selected by the user. Different options for the waveform, amplitude and frequency of the injected current are available, together with the bias point. Simulation results are plotted for carrier density and output power versus time. Instantaneous frequency variations of the laser output are numerically shifted to the audible frequency range and sent to the computer loudspeakers. This results in an intuitive description of the "chirp" phenomenon due to amplitude-phase coupling, typical of directly modulated semiconductor lasers. In this way, the student can actually listen to the time resolved spectral content of the laser output. By changing the laser parameters and/or the modulation parameters, consequent variation of the laser output can be appreciated in intuitive manner. The proposed educational tool has been previously implemented by the same authors with locally executable software. In the present manuscript, we extend our previous work to a web based platform, offering improved distribution and allowing its use to the wide audience of the web.

  18. Multianalyte biosensor based on pH-sensitive ZnO electrolyte-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Haur Kao, Chyuan; Chen, Hsiang; Ling Lee, Ming; Chun Liu, Che; Ueng, Herng-Yih; Cheng Chu, Yu; Jie Chen, Yu; Ming Chang, Kow

    2014-05-01

    Multianalyte electrolyte-insulator-semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na+, K+, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed for use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.

  19. Multianalyte biosensor based on pH-sensitive ZnO electrolyte–insulator–semiconductor structures

    SciTech Connect

    Haur Kao, Chyuan; Chun Liu, Che; Ueng, Herng-Yih; Chen, Hsiang Cheng Chu, Yu; Jie Chen, Yu; Ling Lee, Ming; Ming Chang, Kow

    2014-05-14

    Multianalyte electrolyte–insulator–semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na{sup +}, K{sup +}, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed for use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.

  20. Charge carrier coherence and Hall effect in organic semiconductors

    PubMed Central

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  1. Charge carrier coherence and Hall effect in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  2. Charge carrier coherence and Hall effect in organic semiconductors.

    PubMed

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  3. Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.

    PubMed

    Wang, Peng; Xiong, Jintian; Zhang, Tingting; Chen, Dalei; Xiang, Peng; Zheng, Jilin; Zhang, Yunshan; Li, Ruoming; Huang, Long; Pu, Tao; Chen, Xiangfei

    2015-08-10

    A frequency tunable optoelectronic oscillator based on a directly modulated distributed-feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. Through optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency can enable the loop oscillation with a RF threshold gain of less than 20 dB. The DFB laser is a commercial semiconductor laser with a package of 10 GHz, and its packaging limitation can be overcome by optical injection. In our scheme, neither a high-speed external modulator nor an electrical bandpass filter is required, making the system simple and low-cost. Microwave signals with a frequency tuning range from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers. The phase noise of the generated 9.75 GHz microwave signal is measured to be -104.8 dBc/Hz @ 10 kHz frequency offset. PMID:26367899

  4. Semiconductor-based photoelectrochemical water splitting at the limit of very wide depletion region

    SciTech Connect

    Liu, Mingzhao; Lyons, John L.; Yan, Danhua H.; Hybertsen, Mark S.

    2015-11-23

    In semiconductor-based photoelectrochemical (PEC) water splitting, carrier separation and delivery largely relies on the depletion region formed at the semiconductor/water interface. As a Schottky junction device, the trade-off between photon collection and minority carrier delivery remains a persistent obstacle for maximizing the performance of a water splitting photoelectrode. Here, it is demonstrated that the PEC water splitting efficiency for an n-SrTiO3 (n-STO) photoanode is improved very significantly despite its weak indirect band gap optical absorption (α < 10⁴ cm⁻¹), by widening the depletion region through engineering its doping density and profile. Graded doped n-SrTiO3 photoanodes are fabricated with their bulk heavily doped with oxygen vacancies but their surface lightly doped over a tunable depth of a few hundred nanometers, through a simple low temperature re-oxidation technique. The graded doping profile widens the depletion region to over 500 nm, thus leading to very efficient charge carrier separation and high quantum efficiency (>70%) for the weak indirect transition. As a result, this simultaneous optimization of the light absorption, minority carrier (hole) delivery, and majority carrier (electron) transport by means of a graded doping architecture may be useful for other indirect band gap photocatalysts that suffer from a similar problem of weak optical absorption.

  5. Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser

    NASA Astrophysics Data System (ADS)

    Müller, J.; Hauck, J.; Shen, B.; Romero-García, S.; Islamova, E.; Sharif Azadeh, S.; Joshi, S.; Chimot, N.; Moscoso-Mártir, A.; Merget, F.; Lelarge, F.; Witzens, J.

    2015-03-01

    We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.

  6. Semiconductor up-converter based on cascade carrier transport for infrared detection/imaging

    NASA Astrophysics Data System (ADS)

    Wang, Lei; Hao, Zhi-Biao; Luo, Yi; Kang, Jian-Bin; Wang, Lai; Xiong, Bing; Sun, Chang-Zheng; Wang, Jian; Han, Yan-Jun; Li, Hong-Tao; Wang, Lu; Wang, Wen-Xin; Chen, Hong

    2015-09-01

    The next generation infrared (IR) detection and imaging technology calls for very large-scale IR sensitive chips with non-compromised performance. IR up-converters based on mature III-V semiconductors are thought to be quite promising candidates. However, the up-converters and the corresponding up-conversion systems so far substantially fall behind traditional IR detectors in terms of device performance due to the more serious trade-off between responsivity and dark current. In this article, a cascade infrared up-converter (CIUP) is proposed. By employing cascade carrier transport, IR responsivity can be enhanced while dark current remains in fairly low level. For the fabricated 4-μm InGaAs/AlGaAs CIUP under 3.3 V at 78 K, the up-conversion efficiency of the system is 2.1 mW/W under 2.1 μW mid-infrared input. Both the up-converter and the up-conversion system are under background-limited infrared performance regime below 120 K. Taking shot noise as the main source of system noise, the CIUP system displays a higher detectivity than previous semiconductor up-converters at similar wavelengths, and thus possesses greater potential for future large-scale IR detection and imaging applications.

  7. Semiconductor-based photoelectrochemical water splitting at the limit of very wide depletion region

    DOE PAGESBeta

    Liu, Mingzhao; Lyons, John L.; Yan, Danhua H.; Hybertsen, Mark S.

    2015-11-23

    In semiconductor-based photoelectrochemical (PEC) water splitting, carrier separation and delivery largely relies on the depletion region formed at the semiconductor/water interface. As a Schottky junction device, the trade-off between photon collection and minority carrier delivery remains a persistent obstacle for maximizing the performance of a water splitting photoelectrode. Here, it is demonstrated that the PEC water splitting efficiency for an n-SrTiO3 (n-STO) photoanode is improved very significantly despite its weak indirect band gap optical absorption (α < 10⁴ cm⁻¹), by widening the depletion region through engineering its doping density and profile. Graded doped n-SrTiO3 photoanodes are fabricated with their bulkmore » heavily doped with oxygen vacancies but their surface lightly doped over a tunable depth of a few hundred nanometers, through a simple low temperature re-oxidation technique. The graded doping profile widens the depletion region to over 500 nm, thus leading to very efficient charge carrier separation and high quantum efficiency (>70%) for the weak indirect transition. As a result, this simultaneous optimization of the light absorption, minority carrier (hole) delivery, and majority carrier (electron) transport by means of a graded doping architecture may be useful for other indirect band gap photocatalysts that suffer from a similar problem of weak optical absorption.« less

  8. Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors.

    PubMed

    Vitiello, Miriam S; Coquillat, Dominique; Viti, Leonardo; Ercolani, Daniele; Teppe, Frederic; Pitanti, Alessandro; Beltram, Fabio; Sorba, Lucia; Knap, Wojciech; Tredicucci, Alessandro

    2012-01-11

    The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 × 10(-9) W/(Hz)(1/2) at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection. PMID:22149118

  9. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier.

    PubMed

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  10. Size limitations and gain optimization in semiconductor-optical-amplifier-based optical space switches

    NASA Astrophysics Data System (ADS)

    Chen, Jun; Huang, Dexiu; Liu, Deming

    2002-08-01

    The cascadability of Semiconductor optical amplifier (SOA) gates and the size limitations for several kinds of switch architectures based on SOA's are studied theoretically. The analysis shows that the sizes of matrix-vector switches are severely limited owing to the splitting losses, waveguide losses and coupling losses. However for distributed gain matrix-vector switch and Benes switch, the accumulation of amplified spontaneous emission (ASE) noise and non-ideal extinction ratio also greatly influence the maximal sizes of switches. The calculation results also reveal that the gain optimum strategy for switches based on SOA's, which derived from steady state analysis, will not be optimum when non-ideal extinction ratio and dynamical gain saturation is considered

  11. Theoretical analysis of an optoelectronic oscillator based on a directly modulated semiconductor laser

    NASA Astrophysics Data System (ADS)

    Cho, Jun-Hyung; Heo, Seo Weon; Sung, Hyuk-Kee

    2016-05-01

    We numerically simulated the performance of an optoelectronic oscillator (OEO) based on a directly modulated (DM) semiconductor laser. The standard coupled rate equations were used to describe the DM-OEO modulation process. A rate-equation-based analysis is a means of analyzing OEO performance that is a variation of the method used to assess standard OEOs that employ external modulators. We modeled an OEO with an open-loop response and calculated the oscillation threshold gain and amplitude of the DM-OEO as functions of the DC bias current. By using this method, we were able to optimize OEO operation conditions for a given laser DC bias level in both gain- and amplitude-limited operating environments.

  12. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    NASA Astrophysics Data System (ADS)

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing.

  13. An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Phipps, A.; Sadoulet, B.; Juillard, A.; Jin, Y.

    2016-07-01

    We present the design and noise performance of a fully cryogenic (T=4 K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/c^2 while retaining background discrimination. The amplifier dissipates ≈ 1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of σ _q=106 eV (35 electrons) for leakage currents below 4 × 10^{-15} A.

  14. Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Kolokolov, K.; Li, J.; Ning, C. Z.; Larrabee, D. C.; Tang, J.; Khodaparast, G.; Kono, J.; Sasa, S.; Inoue, M.; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

  15. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    PubMed Central

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  16. Machine Learning Classification of Cirrhotic Patients with and without Minimal Hepatic Encephalopathy Based on Regional Homogeneity of Intrinsic Brain Activity

    PubMed Central

    Liu, Jun; Sun, Tao; Shen, Qun-Tai

    2016-01-01

    Machine learning-based approaches play an important role in examining functional magnetic resonance imaging (fMRI) data in a multivariate manner and extracting features predictive of group membership. This study was performed to assess the potential for measuring brain intrinsic activity to identify minimal hepatic encephalopathy (MHE) in cirrhotic patients, using the support vector machine (SVM) method. Resting-state fMRI data were acquired in 16 cirrhotic patients with MHE and 19 cirrhotic patients without MHE. The regional homogeneity (ReHo) method was used to investigate the local synchrony of intrinsic brain activity. Psychometric Hepatic Encephalopathy Score (PHES) was used to define MHE condition. SVM-classifier was then applied using leave-one-out cross-validation, to determine the discriminative ReHo-map for MHE. The discrimination map highlights a set of regions, including the prefrontal cortex, anterior cingulate cortex, anterior insular cortex, inferior parietal lobule, precentral and postcentral gyri, superior and medial temporal cortices, and middle and inferior occipital gyri. The optimized discriminative model showed total accuracy of 82.9% and sensitivity of 81.3%. Our results suggested that a combination of the SVM approach and brain intrinsic activity measurement could be helpful for detection of MHE in cirrhotic patients. PMID:26978777

  17. Chemical composition, crystal structure, and their relationships with the intrinsic properties of spinel-type crystals based on bond valences.

    PubMed

    Liu, Xiao; Wang, Hao; Lavina, Barbara; Tu, Bingtian; Wang, Weimin; Fu, Zhengyi

    2014-06-16

    Spinel-type crystals may possess complex and versatile chemical composition and crystal structure, which leads to difficulty in constructing relationships among the chemical composition, crystal structure, and intrinsic properties. In this work, we develop new empirical methods based on bond valences to estimate the intrinsic properties, namely, compressibility and thermal expansion of complex spinel-type crystals. The composition-weighted average of bond force constants in tetrahedral and octahedral coordination polyhedra is derived as a function of the composition-weighted average of bond valences, which can be calculated according to the experimental chemical composition and crystal structural parameters. We discuss the coupled effects of tetrahedral and octahedral frameworks on the aforementioned intrinsic properties. The bulk modulus could be quantitatively calculated from the composition-weighted average of bond force constants in tetrahedral and octahedral coordination polyhedra. In contrast, a quantitative estimation of the thermal expansion coefficient could be obtained from the composition-weighted average of bond force constants in octahedral coordination polyhedra. These empirical methods have been validated by the results obtained for a new complex quaternary spinel-type oxynitride Mg0.268Al2.577O3.733N0.267 as well as MgAl2O4 and Al2.85O3.45N0.55 from the literature. Further, these empirical methods have the potential to be extensively applied in other types of complex crystals. PMID:24871452

  18. SLiMPrints: conservation-based discovery of functional motif fingerprints in intrinsically disordered protein regions

    PubMed Central

    Davey, Norman E.; Cowan, Joanne L.; Shields, Denis C.; Gibson, Toby J.; Coldwell, Mark J.; Edwards, Richard J.

    2012-01-01

    Large portions of higher eukaryotic proteomes are intrinsically disordered, and abundant evidence suggests that these unstructured regions of proteins are rich in regulatory interaction interfaces. A major class of disordered interaction interfaces are the compact and degenerate modules known as short linear motifs (SLiMs). As a result of the difficulties associated with the experimental identification and validation of SLiMs, our understanding of these modules is limited, advocating the use of computational methods to focus experimental discovery. This article evaluates the use of evolutionary conservation as a discriminatory technique for motif discovery. A statistical framework is introduced to assess the significance of relatively conserved residues, quantifying the likelihood a residue will have a particular level of conservation given the conservation of the surrounding residues. The framework is expanded to assess the significance of groupings of conserved residues, a metric that forms the basis of SLiMPrints (short linear motif fingerprints), a de novo motif discovery tool. SLiMPrints identifies relatively overconstrained proximal groupings of residues within intrinsically disordered regions, indicative of putatively functional motifs. Finally, the human proteome is analysed to create a set of highly conserved putative motif instances, including a novel site on translation initiation factor eIF2A that may regulate translation through binding of eIF4E. PMID:22977176

  19. Intrinsic motivation factors based on the self-determinant theory for regular breast cancer screening.

    PubMed

    Jung, Su Mi; Jo, Heui-Sug

    2014-01-01

    The purpose of this study was to identify factors of intrinsic motivation that affect regular breast cancer screening and contribute to development of a program for strategies to improve effective breast cancer screening. Subjects were residing in South Korea Gangwon-Province and were female over 40 and under 69 years of age. For the investigation, the Intrinsic Motivation Inventory (IMI) was modified to the situation of cancer screening and was used to survey 905 inhabitants. Multinominal logistic regression analyses were conducted for regular breast cancer screening (RS), one-time breast cancer screening (OS) and non-breast cancer screening (NS). For statistical analysis, IBM SPSS 20.0 was utilized. The determinant factors between RS and NS were "perceived effort and choice" and "stress and strain" - internal motivations related to regular breast cancer screening. Also, determinant factors between RS and OS are "age" and "perceived effort and choice" for internal motivation related to cancer screening. To increase regular screening, strategies that address individual perceived effort and choice are recommended. PMID:25556433

  20. Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tekcan, Burak; Ozgit-Akgun, Cagla; Bolat, Sami; Biyikli, Necmi; Okyay, Ali Kemal

    2014-10-01

    Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.

  1. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

    SciTech Connect

    Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

    2003-12-01

    The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

  2. Magnetic fields and the technology challenges they pose to beam-based equipment: a semiconductor perspective

    NASA Astrophysics Data System (ADS)

    Esqueda, Vincent; Montoya, Julian A.

    2005-08-01

    As semiconductor devices shrink in size to accommodate faster processing speeds, the need for higher resolution beam-based metrology equipment and beam-based writing equipment will increase. The electron and ion beams used within these types of equipment are sensitive to very small variations in magnetic force applied to the beam. This phenomenon results from changes in Alternating Current (AC) and Direct Current (DC) magnetic flux density at the beam column which causes deflections of the beam that can impact equipment performance. Currently the most sensitive beam-based microscope manufacturers require an ambient magnetic field environment that does not have variations that exceed 0.2 milli-Gauss (mG). Studies have shown that such low levels of magnetic flux density can be extremely difficult to achieve. As examples, scissor lifts, vehicles, metal chairs, and doors moving in time and space under typical use conditions can create distortions in the Earth's magnetic field that can exceed 0.2 mG at the beam column. In addition it is known that changes in the Earth's magnetic field caused by solar flares, earthquakes, and variations in the Earth's core itself all cause changes in the magnetic field that can exceed 0.2 mG. This paper will provide the reader with the basic understanding of the emerging problem, will discuss the environmental and facility level challenges associated in meeting such stringent magnetic field environments, will discuss some of the mitigation techniques used to address the problem, and will close by discussing needs for further research in this area to assure semiconductor and nanotechnology industries are pre-positioned for even more stringent magnetic field environmental requirements.

  3. A self-biased neutron detector based on an SiC semiconductor for a harsh environment.

    PubMed

    Ha, Jang Ho; Kang, Sang Mook; Park, Se Hwan; Kim, Han Soo; Lee, Nam Ho; Song, Tae-Yung

    2009-01-01

    Neutron detector based on radiation-hard semiconductor materials like SiC, diamond and AlN has recently emerged as an attractive device for an in-core reactor neutron flux monitoring, a spent fuel characterization, and a home land security application. For the purpose of field measurement activity, a radiation detector having a low-power consumption, a mechanical stability and a radiation hardness is required. Our research was focused on the development of a radiation-resistive neutron semiconductor detector based on a wide band-gap SiC semiconductor. And also it will be operated at a zero-biased voltage using a strong internal electric field. The charge collection efficiency (CCE) was over 80% when the biased voltage was zero. When the biased voltage was applied above 20V, the charge collection efficiency reached 100%. PMID:19362006

  4. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Optical velocimeter based on a semiconductor laser

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya; Dubnishchev, Yu N.; Meledin, V. G.

    1988-03-01

    It is shown that optical velocimeters using diffraction beam splitters are not critically sensitive to the stability of the emission wavelength of a semiconductor laser. A functional scheme of a semiconductor laser source with systems for stabilization of the temperature and pump current is described. The technical characteristics are given of a semiconductor-laser velocimeter for the determination of the velocity and length of rolling stock.

  5. Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-06-01

    Peculiarities of determining the concentration and distribution profile of dopant in the near-surface layer of a semiconductor by measuring the admittance of MIS structures based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy are studied. A technique is proposed for the determining the concentration of dopant based on the measurement of the admittance of MIS structures in the frequency range of 50 kHz - 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer have a high- frequency behavior with respect to the recharge time of surface states located near the Fermi level of intrinsic semiconductor. The distribution profile of dopant in the nearsurface layer of the semiconductor is calculated. It is shown that in p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has the lowest value near the interface with the insulator.

  6. KMAD: knowledge-based multiple sequence alignment for intrinsically disordered proteins

    PubMed Central

    Lange, Joanna; Wyrwicz, Lucjan S.; Vriend, Gert

    2016-01-01

    Summary: Intrinsically disordered proteins (IDPs) lack tertiary structure and thus differ from globular proteins in terms of their sequence–structure–function relations. IDPs have lower sequence conservation, different types of active sites and a different distribution of functionally important regions, which altogether make their multiple sequence alignment (MSA) difficult. The KMAD MSA software has been written specifically for the alignment and annotation of IDPs. It augments the substitution matrix with knowledge about post-translational modifications, functional domains and short linear motifs. Results: MSAs produced with KMAD describe well-conserved features among IDPs, tend to agree well with biological intuition, and are a good basis for designing new experiments to shed light on this large, understudied class of proteins. Availability and implementation: KMAD web server is accessible at http://www.cmbi.ru.nl/kmad/. A standalone version is freely available. Contact: vriend@cmbi.ru.nl PMID:26568635

  7. Assessment of the intrinsic uncertainty of the k0-based NAA

    NASA Astrophysics Data System (ADS)

    Bučar, Tinkara; Smodiš, Borut

    2006-08-01

    This paper addresses the intrinsic uncertainty of k0 neutron activation analysis (NAA) by evaluating the partial uncertainties of the nuclear parameters and parameters given by the irradiation conditions. Uncertainty propagation factors are determined from the basic equations of the k0-NAA and the combined uncertainties are calculated using a software package specially developed for this purpose. The nuclear parameter values and respective uncertainties are taken from an IUPAC database. The uncertainties are calculated for specific conditions given at the TRIGA Mark II reactor of the Jožef Stefan Institute, for all reactions where data is available. On average, neutron reaction-specific values in the range of 1-2% were obtained for 44 elements. For 23 elements, some data are missing in the database, so the values should be obtained elsewhere. The developed approach is generally applicable to other neutron flux conditions.

  8. Ballistic thermal transport properties at low temperatures in semiconductor nanowires-based heterojunctions

    NASA Astrophysics Data System (ADS)

    Yu, Xia; Xie, Zhong-Xiang; Liu, Jun-Hun; Chen, Qiao; Li, Ke-Min; Zhang, Yong

    2016-04-01

    In this paper, we study ballistic thermal transport properties at low temperatures in semiconductor nanowires-based heterojunctions under hard-wall boundary conditions (HWBCs) and stress-free boundary conditions (SFBCs). Here, the numerical calculations for the asymmetric heterojunction (ASHJ) and symmetric heterojunction (SHJ) are done. When SFBCs are employed, the transmission coefficient exhibits different behaviors between ASHJ and SHJ especially at low frequency, but when HWBCs are employed, the transmission coefficient displays similar smooth platforms in both heterojunctions. In low temperature limit, the quantized thermal conductance can be observed in SHJ under SFBCs regardless of the structural details. However, this quantization cannot be observed in ASHJ under SFBCs, and the thermal conductance is strongly sensitive to the transverse width ratio rather than the slant angle. With increasing the transverse width ratio, the thermal conductance in both heterojunctions gradually increases especially, and such the increasing degree is more evident at higher temperatures. A brief analysis of these results is given.

  9. A semiconductor opening switch based generator with pulse repetitive frequency of 4 MHz.

    PubMed

    Wang, Gang; Su, Jiancang; Ding, Zhenjie; Yuan, Xuelin; Pan, Yafeng

    2013-12-01

    A MHz repetitive and nanosecond pulsed power generator based on the semiconductor opening switch (SOS) is developed, in which the pulse compression unit utilizes several Radio Frequency (RF) MOSFETs and a saturable Linear Transformer Driver (LTD). The RF MOSFETs are employed to obtain the forward pumping current pulses with the duration of tens of nanoseconds; the saturable LTD is used to raise the pulse voltage, to compress the pulse width and to pump SOS reversely. The SOS assembly cuts off the reverse current in a few nanoseconds, leading to a narrow output pulse on an external load. The experimental results show that the amplitude of the output pulse on a 106 Ω resistive load is about 3.8 kV and the width is 2 ns. Due to the repetitive ability of the RF MOSFETs, the generator can operate at a repetitive frequency of higher than 4 MHz in burst mode. PMID:24387463

  10. Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Noh, Youngwook; Polat, Kinyas; Kemal Okyay, Ali; Lee, Dongjin

    2015-12-01

    Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.

  11. Vacuum Violet Photo-Response of AlGaN-Based Metal-Semiconductor-Metal Photodetectors

    NASA Astrophysics Data System (ADS)

    Zhou, Dong; Lu, Hai; Chen, Dun-Jun; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Dou; Li, Liang

    2013-11-01

    Al0.5Ga0.5 N-based metal-semiconductor-metal photodetectors (PDs) with a large device area of 5 × 5 mm2 are fabricated on a sapphire substrate, which are tested for vacuum ultraviolet light detection by using a synchrotron radiation source. The PD exhibits low dark current of less than 1 pA under 30 V bias and a spectral cutoff around 260 nm, corresponding to the energy bandgap of Al0.5Ga0.5N. A peak photo-responsivity of 14.68 mA/W at 250 nm with a rejection ratio (250/360 nm) of more than four orders of magnitude is obtained under 30 V bias. For wavelength less than 170 nm, the photoresponsivity of the PD is found to increase as wavelength decreases, which is likely caused by the enhanced photoemission effect.

  12. Synchronized 4 × 12 GHz hybrid harmonically mode-locked semiconductor laser based on AWG.

    PubMed

    Liu, S; Lu, D; Zhang, R; Zhao, L; Wang, W; Broeke, R; Ji, C

    2016-05-01

    We report a monolithically integrated synchronized four wavelength channel mode-locked semiconductor laser chip based on arrayed waveguide grating and fabricated in the InP material system. Device fabrication was completed in a multiproject wafer foundry run on the Joint European Platform for Photonic Integration of Components and Circuits. The integrated photonic chip demonstrated 5th harmonic electrical hybrid mode-locking operation with four 400 GHz spacing wavelength channels and synchronized to a 12.7 GHz RF clock, for nearly transform-limited optical pulse trains from a single output waveguide. A low timing jitter of 0.349 ps, and RF frequency locking range of ~50 MHz were also achieved. PMID:27137587

  13. Electrical Characteristics and Interface Properties of III Nitride-Based Metal-Insulator-Semiconductor Structure

    SciTech Connect

    Mahyuddin, A.; Hassan, Z.; Yusof, Y.; Cheong, K. Y.

    2010-07-07

    In this work, III-Nitride based metal-insulator-semiconductor (MIS) structure has been studied using AlN/GaN heterostructures on Si (111) with AlN buffer layer grown by plasma-assisted molecular beam epitaxy (MBE). The structural and electrical characteristics of the films were studied through high resolution x-ray diffraction (HRXRD), capacitance-voltage (C-V) and current-voltage (I-V) measurements. The value of flat-band voltage was -0.7 V. A total fixed oxide charge density of 2.73x10{sup 11} cm{sup -2} was estimated. Terman's method was used to obtain the density of interface state in the MIS structure. The analysis showed low interface state density values of 3.66x10{sup 11} cm{sup -2} eV{sup -1}.

  14. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  15. Methods of reducing low frequency cabin noise and sonically induced stresses, based on the intrinsic structural tuning concept

    NASA Technical Reports Server (NTRS)

    Sengupta, G.

    1977-01-01

    Control of low frequency interior noise has been difficult in all commercial and general aviation aircraft, since the existing sound attenuation techniques are less effective at these frequencies. Therefore low frequency cabin noise and sonically induced stresses can be reduced mainly by a proper design of the fuselage structure. For this purpose, a concept based on intrinsic tuning and damping of fuselage structural elements has been under development at Boeing for the past three years. This paper describes the results of some laboratory and field tests that were conducted for evaluation of the concept.

  16. A new strategy for sequential assignment of intrinsically unstructured proteins based on 15N single isotope labelling

    NASA Astrophysics Data System (ADS)

    Lopez, Juan; Ahuja, Puneet; Gerard, Melanie; Wieruszeski, Jean-Michel; Lippens, Guy

    2013-11-01

    We describe a new efficient strategy for the sequential assignment of amide resonances of a conventional 15N-1H HSQC spectrum of intrinsically unfolded proteins, based on composite NOESY-TOCSY and TOCSY-NOESY mixing times. These composite mixing times lead to a Hα-proton mediated unidirectional transfer of amide to amide proton. We have implemented the composite mixing times in an HSQC-NOESY-HSQC manner to obtain directional connectivity between amides of neighbouring residues. We experimentally determine the optimal mixing times for both transfer schemes, and demonstrate its use in the assignment for both a fragment of the neuronal tau protein and for α-synuclein.

  17. Intrinsically safe laser-based system for continuous measurement of low-frequency vibration of mine shaft installations

    NASA Astrophysics Data System (ADS)

    Szade, Adam; Passia, Henryk; Lipowczan, Adam; Bochenek, Wojciech

    1998-06-01

    Proper condition of the mine shaft equipment is of vital importance both in view of production and safety. In some cases, this state can be adversely by the changing geological conditions in the shaft surroundings so that special precautions are necessary for reliable operation of the shaft. In the paper, an intrinsically-safe measuring system, approved for gassy mine use, based on the laser vibration sensor has been presented including its construction and operational characteristics. Examples of application have also been given related to measurements of low-frequency vibration events and of displacements both in the surface and underground parts of the shafts.

  18. Proton Conduction in a Phosphonate-Based Metal-Organic Framework Mediated by Intrinsic "Free Diffusion inside a Sphere".

    PubMed

    Pili, Simona; Argent, Stephen P; Morris, Christopher G; Rought, Peter; García-Sakai, Victoria; Silverwood, Ian P; Easun, Timothy L; Li, Ming; Warren, Mark R; Murray, Claire A; Tang, Chiu C; Yang, Sihai; Schröder, Martin

    2016-05-25

    Understanding the molecular mechanism of proton conduction is crucial for the design of new materials with improved conductivity. Quasi-elastic neutron scattering (QENS) has been used to probe the mechanism of proton diffusion within a new phosphonate-based metal-organic framework (MOF) material, MFM-500(Ni). QENS suggests that the proton conductivity (4.5 × 10(-4) S/cm at 98% relative humidity and 25 °C) of MFM-500(Ni) is mediated by intrinsic "free diffusion inside a sphere", representing the first example of such a mechanism observed in MOFs. PMID:27182787

  19. Fast-response humidity-sensing films based on methylene blue aggregates formed on nanoporous semiconductor films

    NASA Astrophysics Data System (ADS)

    Ishizaki, Ryota; Katoh, Ryuzi

    2016-05-01

    We prepared fast-response colorimetric humidity-sensing (vapochromic) films based on methylene blue adsorption onto nanoporous semiconductor (TiO2, Al2O3) films. Color changes caused by changes of humidity could be easily identified visually. A characteristic feature of the vapochromic films was their fast response to changes of humidity. We found that the response began to occur within 10 ms. The response was rapid because all the methylene blue molecules attached to the nanoporous semiconductor surface were directly exposed to the environment. We also deduced that the color changes were caused by structural changes of the methylene blue aggregates on the surface.

  20. Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots

    SciTech Connect

    Vitukhnovskii, A. G. Vashchenko, A. A.; Lebedev, V. S.; Vasiliev, R. B.; Brunkov, P. N.; Bychkovskii, D. N.

    2013-07-15

    The results of an experimental study of organic light-emitting diodes (LEDs) with luminescent layers based on two types of CdSe/CdS semiconductor quantum dots (QDs) with an average CdSe core diameter of 3 and 5 nm and a characteristic CdS shell thickness of 0.5 nm are presented. The dependences of the LED efficiency on the QD concentration are determined. The experimental data are used to determine the mechanism of electronic-excitation transfer from the organic matrix to the semiconductor QDs. Ways of optimizing the design of the LEDs in order to improve their efficiency are suggested on this basis.

  1. Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

    PubMed

    Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

    2009-04-01

    We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees. PMID:19340174

  2. Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

    PubMed

    Baeg, Kang-Jun; Caironi, Mario; Noh, Yong-Young

    2013-08-21

    For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge

  3. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    SciTech Connect

    Goyal, Amit

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  4. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors.

    PubMed

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  5. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  6. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    PubMed Central

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  7. Performance of MEMS-based gas distribution and control systems for semiconductor processing

    NASA Astrophysics Data System (ADS)

    Henning, Albert K.; Fitch, John; Harris, James M.; Arkilic, Errol B.; Cozad, Brad A.; Dehan, Ben

    1998-09-01

    The advent of microelectromechanical systems has enabled dramatic changes in diverse technological areas. In terms of control and distribution of liquids and gases (microfluidics), MEMS-based devices offer opportunities to achieve increased performance, and higher levels of functional integration, at lower cost, with decreased size and increased reliability. This work focuses on recent research and development of high-purity gags distribution and control systems for semiconductor processing. These systems include the following components, based upon both normally-open and normally-closed microvalves: pressure- based mass flow controllers; vacuum leak-rate shut-off valves; and pressure regulators. Advanced packaging techniques enable these components to be integrated into gas sticks and panels which have small size, corrosion-resistant wetted materials, small dead volumes, and minimal particle generation. Principles of operation of components and panels, and performance data at both the component and system level, will be presented. The potential for 10X size reduction (linear dimension), 2X product yield improvement (through increased reliability, improved flow accuracy and repeatability, and contamination reduction), and 5X reduction in process gas consumption, will also be addressed. Particular emphasis on characterization and verification of flow measurements in mass flow controllers (versus NIST standards), and the flow models used in designing and characterizing these systems, will be made.

  8. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    NASA Astrophysics Data System (ADS)

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-05-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities.

  9. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  10. What if the Electrical Conductivity of Graphene Is Significantly Deteriorated for the Graphene-Semiconductor Composite-Based Photocatalysis?

    PubMed

    Weng, Bo; Xu, Yi-Jun

    2015-12-23

    The extraordinary electrical conductivity of graphene has been widely regarded as the bible in literature to explain the activity enhancement of graphene-semiconductor composite photocatalysts. However, from the viewpoint of an entire composite-based artificial photosynthetic system, the significant matter of photocatalytic performance of graphene-semiconductor composite system is not just a simple and only issue of excellent electrical conductivity of graphene. Herein, the intentional design of melamine resin monomers functionalized three-dimensional (3D) graphene (donated as MRGO) with significantly deteriorated electrical conductivity enables us to independently focus on studying the geometry effect of MRGO on the photocatalytic performance of graphene-semiconductor composite. By coupling semiconductor CdS with graphene, including MRGO and reduced graphene oxide (RGO), it was found that the CdS-MRGO composites exhibit much higher visible light photoactivity than CdS-RGO composites although the electrical conductivity of MRGO is remarkably much lower than that of RGO. The comparison characterizations evidence that such photoactivity enhancement is predominantly attributed to the restacking-inhibited 3D architectural morphology of MRGO, by which the synergistic effects of boosted separation and transportation of photogenerated charge carriers and increased adsorption capacity can be achieved. Our work highlights that the significant matter of photocatalytic performance of graphene-semiconductor composite is not a simple issue on how to harness the electrical conductivity of graphene but the rational ensemble design of graphene-semiconductor composite, which includes the integrative optimization of geometrical and electrical factors of individual component and the interface composition. PMID:26624808

  11. The intrinsic periodic fluctuation of forest: a theoretical model based on diffusion equation

    NASA Astrophysics Data System (ADS)

    Zhou, J.; Lin, G., Sr.

    2015-12-01

    Most forest dynamic models predict the stable state of size structure as well as the total basal area and biomass in mature forest, the variation of forest stands are mainly driven by environmental factors after the equilibrium has been reached. However, although the predicted power-law size-frequency distribution does exist in analysis of many forest inventory data sets, the estimated distribution exponents are always shifting between -2 and -4, and has a positive correlation with the mean value of DBH. This regular pattern can not be explained by the effects of stochastic disturbances on forest stands. Here, we adopted the partial differential equation (PDE) approach to deduce the systematic behavior of an ideal forest, by solving the diffusion equation under the restricted condition of invariable resource occupation, a periodic solution was gotten to meet the variable performance of forest size structure while the former models with stable performance were just a special case of the periodic solution when the fluctuation frequency equals zero. In our results, the number of individuals in each size class was the function of individual growth rate(G), mortality(M), size(D) and time(T), by borrowing the conclusion of allometric theory on these parameters, the results perfectly reflected the observed "exponent-mean DBH" relationship and also gave a logically complete description to the time varying form of forest size-frequency distribution. Our model implies that the total biomass of a forest can never reach a stable equilibrium state even in the absence of disturbances and climate regime shift, we propose the idea of intrinsic fluctuation property of forest and hope to provide a new perspective on forest dynamics and carbon cycle research.

  12. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  13. Semiconductor detectors with proximity signal readout

    SciTech Connect

    Asztalos, Stephen J.

    2014-01-30

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  14. Characterization of a novel intrinsic luminescent room-temperature ionic liquid based on [P6,6,6,14 ][ANS].

    PubMed

    Delgado, Joana M; Raymundo, Anabela; Vilarigues, Márcia; Branco, Luís C; Laia, César A T

    2015-01-01

    Intrinsically luminescent room-temperature ionic liquids (RTILs) can be prepared by combining a luminescent anion (more common) or cation with appropriate counter ions, rendering new luminescent soft materials. These RTILs are still new, and many of their photochemical properties are not well known. A novel intrinsic luminescent RTIL based on the 8-anilinonaphthalene-1-sulfonate ([ANS]) anion combined with the trihexyltetradecylphosphonium ([P6,6,6,14 ]) cation was prepared and characterized by spectroscopic techniques. Detailed photophysical studies highlight the influence of the ionic liquid environment on the ANS fluorescence, which together with rheological and (1) H NMR experiments illustrate the effects of both the viscosity and electrostatic interactions between the ions. This material is liquid at room temperature and possesses a glass transition temperature (Tg ) of 230.4 K. The fluorescence is not highly sensitive to factors such as temperature, but owing to its high viscosity, dynamic Stokes shift measurements reveal very slow components for the IL relaxation. PMID:25124894

  15. Evaluating aquatic invertebrate vulnerability to insecticides based on intrinsic sensitivity, biological traits, and toxic mode of action.

    PubMed

    Rico, Andreu; Van den Brink, Paul J

    2015-08-01

    In the present study, the authors evaluated the vulnerability of aquatic invertebrates to insecticides based on their intrinsic sensitivity and their population-level recovery potential. The relative sensitivity of invertebrates to 5 different classes of insecticides was calculated at the genus, family, and order levels using the acute toxicity data available in the US Environmental Protection Agency ECOTOX database. Biological trait information was linked to the calculated relative sensitivity to evaluate correlations between traits and sensitivity and to calculate a vulnerability index, which combines intrinsic sensitivity and traits describing the recovery potential of populations partially exposed to insecticides (e.g., voltinism, flying strength, occurrence in drift). The analysis shows that the relative sensitivity of arthropods depends on the insecticide mode of action. Traits such as degree of sclerotization, size, and respiration type showed good correlation to sensitivity and can be used to make predictions for invertebrate taxa without a priori sensitivity knowledge. The vulnerability analysis revealed that some of the Ephemeroptera, Plecoptera, and Trichoptera taxa were vulnerable to all insecticide classes and indicated that particular gastropod and bivalve species were potentially vulnerable. Microcrustaceans (e.g., daphnids, copepods) showed low potential vulnerability, particularly in lentic ecosystems. The methods described in the present study can be used for the selection of focal species to be included as part of ecological scenarios and higher tier risk assessments. PMID:25854193

  16. Feature analysis and classification of manufacturing signatures based on semiconductor wafermaps

    SciTech Connect

    Tobin, K.W.; Gleason, S.S.; Karnowski, T.P.; Cohen, S.L.

    1997-02-01

    Automated tools for semiconductor wafer defect analysis are becoming more necessary as device densities and wafer sizes continue to increase. Trends towards larger wafer formats and smaller critical dimensions have caused an exponential increase in the volume of defect data which must be analyzed and stored. To accommodate these changing factors, automatic analysis tools are required that can efficiently and robustly process the increasing amounts of data, and thus quickly characterize manufacturing processes and accelerate yield learning. During the first year of this cooperative research project between SEMATECH and the Oak Ridge National Laboratory, a robust methodology for segmenting signature events prior to feature analysis and classification was developed. Based on the results of this segmentation procedure, a feature measurement strategy has been designed based on interviews with process engineers coupled with the analysis of approximately 1500 electronic wafermap files. In this paper, the authors represent an automated procedure to rank and select relevant features for use with a fuzzy pair-wise classifier and give examples of the efficacy of the approach taken. Results of the feature selection process are given for two uniquely different types of class data to demonstrate a general improvement in classifier performance.

  17. Earth-abundant cocatalysts for semiconductor-based photocatalytic water splitting.

    PubMed

    Ran, Jingrun; Zhang, Jun; Yu, Jiaguo; Jaroniec, Mietek; Qiao, Shi Zhang

    2014-11-21

    Photocatalytic water splitting represents a promising strategy for clean, low-cost, and environmental-friendly production of H2 by utilizing solar energy. There are three crucial steps for the photocatalytic water splitting reaction: solar light harvesting, charge separation and transportation, and the catalytic H2 and O2 evolution reactions. While significant achievement has been made in optimizing the first two steps in the photocatalytic process, much less efforts have been put into improving the efficiency of the third step, which demands the utilization of cocatalysts. To date, cocatalysts based on rare and expensive noble metals are still required for achieving reasonable activity in most semiconductor-based photocatalytic systems, which seriously restricts their large-scale application. Therefore, seeking cheap, earth-abundant and high-performance cocatalysts is indispensable to achieve cost-effective and highly efficient photocatalytic water splitting. This review for the first time summarizes all the developed earth-abundant cocatalysts for photocatalytic H2- and O2-production half reactions as well as overall water splitting. The roles and functional mechanism of the cocatalysts are discussed in detail. Finally, this review is concluded with a summary, and remarks on some challenges and perspectives in this emerging area of research. PMID:24429542

  18. 2-Aminopyrimidine-silver(I) based organic semiconductors: Electronic structure and optical response

    NASA Astrophysics Data System (ADS)

    Riefer, A.; Rauls, E.; Schmidt, W. G.; Eberhard, J.; Stoll, I.; Mattay, J.

    2012-04-01

    Calculations based on (occupation constrained) density functional theory using local as well as hybrid functionals to describe the electron-electron exchange and correlation are combined with many-body perturbation theory in order to determine and rationalize the electronic and optical excitation properties of 2-aminopyrimidine-silver(I) based organic semiconductors and their parent molecules. Large quasiparticle shifts and exciton binding energies of about 4 eV are found in the aminopyrimidine molecules. Both the quasiparticle blueshift and the excitonic redshift are reduced upon crystal formation. They cancel each other partially and thus allow for a meaningful description of the molecular and crystal optical response within the independent-particle approximation. We find a surprisingly strong influence of local-field effects as well as resonant-nonresonant coupling terms in the electron-hole Hamiltonian on the optical properties. The calculations reproduce well measured data and allow for identifying chemical trends with respect to the organic building blocks of the crystals.

  19. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico

    2016-01-01

    This paper presents an analysis of the high voltage trapping processes that take place in high-electron mobility transistors based on GaN, with a metal-insulator-semiconductor (MIS) structure. The study is based on combined pulsed and transient measurements, carried out with trapping voltages in the range from 50 to 500 V. The results indicate that: (i) dynamic Ron is maximum for trapping voltages between 200 and 300 V, and decreases for higher voltage levels; (ii) Ron-transient measurements reveal the presence of a dominant trap with activation energy Ea1 = 0.93 eV and of a second trap with activation energy equal to Ea2 = 0.61 eV; (iii) the deep level transient spectroscopy (DLTS) signal associated to trap Ea1 is completely suppressed for high trapping voltages (VDS = 500 V). The results are interpreted by considering that the trap Ea1 is located in the buffer, and originates from CN defects. The exposure to high drain voltages may favor the depletion of such traps, due to a field-assisted de-trapping process or to the presence of vertical leakage paths.

  20. Stabilization of Ferromagnetic States by Electron Doping in ZnO-Based Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2001-03-01

    In order to investigate functionality of ZnO as a diluted magnetic semiconductor (DMS), we had studied the magnetism in ZnO doped with 3d transition metal atoms (TM) and showed that it was also a candidate for a new functional magnetic material [1]. In this paper, we develop our previous work and give detailed materials design with ZnO-based DMS based on ab initio calculations. The electronic structure of a TM-doped ZnO was calculated within the local density approximation by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. Total energies of Zn_1-xTM^\\uparrow_xO and Zn_1-xTM^\\uparrow_x/2TM^downarrow_x/2O, where up and down arrows mean the directions of respective atomic magnetic moments, were compared and appearance of the ferromagnetism was discussed. Effects of carrier doping to these systems were also considered. It was found that their magnetic states were controllable by changing the carrier density. In particular, ferromagnetic states were stabilized by electron doping in the case of Fe, Co or Ni doped ZnO. From the point of practical applications, it is favorable feature to realize high Curie temperature ferromagnet, because n-type ZnO is easily available. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555.

  1. Defect chemistry and defect engineering of TiO2-based semiconductors for solar energy conversion.

    PubMed

    Nowotny, Janusz; Alim, Mohammad Abdul; Bak, Tadeusz; Idris, Mohammad Asri; Ionescu, Mihail; Prince, Kathryn; Sahdan, Mohd Zainizan; Sopian, Kamaruzzaman; Mat Teridi, Mohd Asri; Sigmund, Wolfgang

    2015-12-01

    This tutorial review considers defect chemistry of TiO2 and its solid solutions as well as defect-related properties associated with solar-to-chemical energy conversion, such as Fermi level, bandgap, charge transport and surface active sites. Defect disorder is discussed in terms of defect reactions and the related charge compensation. Defect equilibria are used in derivation of defect diagrams showing the effect of oxygen activity and temperature on the concentration of both ionic and electronic defects. These defect diagrams may be used for imposition of desired semiconducting properties that are needed to maximize the performance of TiO2-based photoelectrodes for the generation of solar hydrogen fuel using photo electrochemical cells (PECs) and photocatalysts for water purification. The performance of the TiO2-based semiconductors is considered in terms of the key performance-related properties (KPPs) that are defect related. It is shown that defect engineering may be applied for optimization of the KPPs in order to achieve optimum performance. PMID:26446476

  2. A 6 GW nanosecond solid-state generator based on semiconductor opening switch

    NASA Astrophysics Data System (ADS)

    Gusev, A. I.; Pedos, M. S.; Rukin, S. N.; Timoshenkov, S. P.; Tsyranov, S. N.

    2015-11-01

    In this paper, a nanosecond all solid-state generator providing peak power of up to 6 GW, output voltage of 500-900 kV, pulse length (full width at half maximum) of ˜7 ns across external loads of 40-100 Ω, and pulse repetition frequency up to 1 kHz in burst operation mode is described. The output pulse is generated by a semiconductor opening switch (SOS). A new SOS pumping circuit based on a double forming line (DFL) is proposed and its implementation described. As compared with a lumped capacitors-based pumping circuit, the DFL allows minimization of the inductance and stray capacitance of the reverse pumping circuit, and thus, an increase in the SOS cutoff current amplitude and generator output peak power as a whole. The pumping circuit provides a reverse current increasing through the SOS up to 14 kA within ˜12 ns. The SOS cuts off the current in ˜2 ns; the current cutoff rate reaches 7 kA/ns. The SOS braking power (the product of peak voltage and cutoff current) for an external load above 100 Ω is 13 GW.

  3. Semiconductor-based sequencing of genome-wide DNA methylation states.

    PubMed

    Corley, Michael J; Zhang, Wei; Zheng, Xin; Lum-Jones, Annette; Maunakea, Alika K

    2015-01-01

    Methylated DNA immunoprecipitation sequencing (MeDIP-Seq) is a widely used approach to study DNA methylation genome-wide. Here, we developed a MeDIP-Seq protocol compatible with the Ion Torrent semiconductor-based sequencing platform that is low cost, rapid, and scalable. We applied this protocol to demonstrate MeDIP-Seq on the Ion Torrent platform provides adequate coverage of CpG cytosines, the methylation states of which we validated at single-base resolution on the Infinium HumanMethylation450 BeadChip array, and accurately identifies sites of differential DNA methylation. Furthermore, we applied an integrative approach to further investigate and confirm the role of DNA methylation in alternative splicing and to profile 5mC and 5hmC variants of DNA methylation in normal human brain tissue that is localized over distinct genomic regions. These applications of MeDIP-Seq on the Ion Torrent platform have broad utility and add to the current methodologies for profiling genome-wide DNA methylation states in normal and disease conditions. PMID:25602802

  4. Semiconductor lasers for space sensor applications

    NASA Technical Reports Server (NTRS)

    Katz, Joseph

    1988-01-01

    Despite their intrinsic power limitations, semiconductor laser diodes are essential for laser-based spaceborne sensor systems covering a wide spectral range, fulfilling such roles as pumping and injection-locking. They may also be used as direct sources in shorter-range operations. AlGaAs laser arrays have been developed for 810-nm band pumping in Nd:YAG lasers otherwise emitting at 1.064 nm. Additional roles include their use as low-power injection seeds, locking a solid-state laser into a specific desired wavelength.

  5. Continuously tunable Yb:KYW femtosecond oscillator based on a tunable highly dispersive semiconductor mirror.

    PubMed

    Wnuk, P; Wasylczyk, P; Zinkiewicz, Ł; Dems, M; Hejduk, K; Regiński, K; Wójcik-Jedlińska, A; Jasik, A

    2014-07-28

    The optimized nonuniform growth process was used to achieve spatially dependent reflectivity and dispersions characteristics in a highly dispersive semiconductor mirror. The mirror, together with a semiconductor saturable absorber mirror (SESAM), was used to demonstrate a tunable femtosecond Yb:KYW oscillator. In the passive modelocking regime the laser could be continuously tuned over 3.5 nm spectral band around 1032 nm with high resolution, maintaining the average output power above 140 mW. PMID:25089448

  6. Materials design of dilute magnetic semiconductors based on the control of spinodal decomposition

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori

    2010-03-01

    Recently, spinodal decomposition phenomena attract much attention in the fabrication of dilute magnetic semiconductors (DMS). Many experimental results indicate that the magnetic properties of DMS are strongly affected by the occurrence of spinodal decomposition [1], thus people are now interested in controlling the magnetic properties of DMS by tuning the spinodal decomposition. In this talk, I will discuss spinodal decomposition in DMS based on the first-principles calculation. The electronic structure of DMS is calculated by using the Korringa-Kohn-Rostoker coherent potential approximation method. Based on the calculated mixing energy I will discuss phase diagrams of DMS systems and their chemical trends. By using the calculated chemical pair interactions between magnetic impurities in DMS, the self-organization of nano-structures in DMS of the nano-structures are simulated by using the Monte Carlo method. The simulation results indicate that we can control super-paramagnetic blocking temperature by optimizing the size of the nano-structures by changing the crystal growth condition [2]. Next, I will propose co-doping method to control solubility limit of magnetic impurities in DMS. From the total energy calculations, it is shown that the solubility of magnetic impurities is strongly enhanced under the existence of interstitial donors [2]. However, due to the compensation of holes by the co-dopants, the ferromagnetism is suppressed. Based on the kinetic Monte Carlo simulations, we propose low temperature annealing method to remove interstitial co-dopants for recovering the ferromagnetism. By combining the co-doping and the low temperature annealing, we can fabricate DMS with high concentration of magnetic impurities which should show high-Tc. This work is based on the collaboration with H. Fujii, L. Bergqvist, P. H. Dederichs and H. Katayama-Yoshida.[4pt] [1] A. Bonanni, Semicond. Sci. Technol. 22 (2007) R41.[0pt] [2] K. Sato et al., Rev. Mod. Phys. Phys

  7. New efficient vanishing point detection from a single road image based on intrinsic line orientation and color texture properties

    NASA Astrophysics Data System (ADS)

    Lu, Xiqun

    2012-03-01

    Detecting the vanishing point from a single road image is a challenging problem because there is very limited information in the input image that can help the computer to deduce the genuine location of vanishing point. Besides, the cluttered ambient environment in a real road image sometimes will hinder rather than assist the detection. Learning both the advantages and the limitations of current edge-based and texture-based approaches motivates us to propose a new vanishing point detection method that exploits the intrinsic geometric line structures and color texture properties of general roads. Our approach integrates the efficiency of line segments of edge-based methods, and the orientation coherence concept that is frequently applied in texture-based methods, which can be of great help to improve the accuracy of selecting the right line segments for vanishing point detection. The proposed method has been implemented and tested on over 1000 various road images. These road images exhibit large variations in color, texture, illumination condition, and ambient environment. The experimental results demonstrate that this new method is both efficient and effective in detecting vanishing point when compared to the state-of-the-art edge-based and texture-based methods.

  8. Electromagnetic metamaterial-inspired band gap and perfect transmission in semiconductor and graphene-based electronic and photonic structures

    NASA Astrophysics Data System (ADS)

    Mahdy, M. R. C.; Al Sayem, Ayed; Shahriar, Arif; Shawon, Jubayer; Al-Quaderi, Golam Dastegir; Jahangir, Ifat; Matin, M. A.

    2016-04-01

    In this article, at first we propose a unified and compact classification of single negative electromagnetic metamaterial-based perfect transmission unit cells. The classes are named as: type-A, -B and -C unit cells. Then based on the classification, we have extended these ideas in semiconductor and graphene regimes. For type-A: Based on the idea of electromagnetic Spatial Average Single Negative bandgap, novel bandgap structures have been proposed for electron transmission in semiconductor heterostructures. For type-B: with dielectric-graphene-dielectric structure, almost all angle transparency is achieved for both polarizations of electromagnetic wave in the terahertz frequency range instead of the conventional transparency in the microwave frequency range. Finally the application of the gated dielectric-graphene-dielectric has been demonstrated for the modulation and switching purpose.

  9. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

    PubMed Central

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-01-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723

  10. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices.

    PubMed

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-01-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723