Science.gov

Sample records for ion implantation energies

  1. Molecular ion sources for low energy semiconductor ion implantation (invited)

    NASA Astrophysics Data System (ADS)

    Hershcovitch, A.; Gushenets, V. I.; Seleznev, D. N.; Bugaev, A. S.; Dugin, S.; Oks, E. M.; Kulevoy, T. V.; Alexeyenko, O.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S.; Vizir, A.; Yushkov, G. Yu.

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4+ ion beams were extracted. Results from devices and some additional concepts are described.

  2. Molecular ion sources for low energy semiconductor ion implantation (invited).

    PubMed

    Hershcovitch, A; Gushenets, V I; Seleznev, D N; Bugaev, A S; Dugin, S; Oks, E M; Kulevoy, T V; Alexeyenko, O; Kozlov, A; Kropachev, G N; Kuibeda, R P; Minaev, S; Vizir, A; Yushkov, G Yu

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described. PMID:26932065

  3. ION SOURCES FOR ENERGY EXTREMES OF ION IMPLANTATION.

    SciTech Connect

    HERSCHCOVITCH,A.; JOHNSON, B.M.; BATALIN, V.A.; KROPACHEV, G.N.; KUIBEDA, R.P.; KULEVOY, T.V.; KOLOMIETS, A.A.; PERSHIN, V.I.; PETRENKO, S.V.; RUDSKOY, I.; SELEZNEV, D.N.; BUGAEV, A.S.; GUSHENETS, V.I.; LITOVKO, I.V.; OKS, E.M.; YUSHKOV, G. YU.; MASEUNOV, E.S.; POLOZOV, S.M.; POOLE, H.J.; STOROZHENKO, P.A.; SVAROVSKI, YA.

    2007-08-26

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques, which meet the two energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of Antimony and Phosphorous ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and smaller currents of negative Decaborane ions were also extracted. Additionally, Boron current fraction of over 70% was extracted from a Bemas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  4. High energy implantation with high-charge-state ions in a vacuum arc ion implanter

    SciTech Connect

    Oks, E.M. |; Anders, A.; Brown, I.G.; Dickinson, M.R.; MacGill, R.A.

    1996-08-01

    Ion implantation energy can in principal be increased by increasing the charge states of the ions produced by the ion source rather than by increasing the implanter operating voltage, providing an important savings in cost and size of the implanter. In some recent work the authors have shown that the charge states of metal ions produced in a vacuum arc ion source can be elevated by a strong magnetic field. In general, the effect of both high arc current and high magnetic field is to push the distribution to higher charge states--the mean ion charge state is increased and new high charge states are formed. The effect is significant for implantation application--the mean ion energy can be about doubled without change in extraction voltage. Here they describe the ion source modifications, the results of time-of-flight measurements of ion charge state distributions, and discuss the use and implications of this technique as a means for doing metal iron implantation in the multi-hundreds of keV ion energy range.

  5. Molecular Ion Beam Transportation for Low Energy Ion Implantation

    SciTech Connect

    Kulevoy, T. V.; Kropachev, G. N.; Seleznev, D. N.; Yakushin, P. E.; Kuibeda, R. P.; Kozlov, A. V.; Koshelev, V. A.; Hershcovitch, A.; Johnson, B. M.; Gushenets, V. I.; Oks, E. M.; Polozov, S. M.; Poole, H. J.

    2011-01-07

    A joint research and development of steady state intense boron ion sources for 100's of electron-volt ion implanters has been in progress for the past five years. Current density limitation associated with extracting and transporting low energy ion beams result in lower beam currents that in turn adversely affects the process throughput. The transport channel with electrostatic lenses for decaborane (B{sub 10}H{sub 14}) and carborane (C{sub 2}B{sub 10}H{sub 12}) ion beams transportation was developed and investigated. The significant increase of ion beam intensity at the beam transport channel output is demonstrated. The transport channel simulation, construction and experimental results of ion beam transportation are presented.

  6. Isotopic fractionation in low-energy ion implantation

    NASA Astrophysics Data System (ADS)

    Ponganis, K. V.; Graf, T.; Marti, K.

    1997-08-01

    The evolutions of planetary atmospheres and other solar system reservoirs have been affected by a variety of fractionating mechanisms. It has been suggested that one of these mechanisms could be low-energy ion implantation. Bernatowicz and Hagee [1987] showed that Kr and Xe implanted at low energy onto tungsten are fractionated by approximately 1% per amu, favoring the heavy isotopes; we confirm these effects. We have extended these studies to Ar and Ne, using a modified Bayard-Alpert type implanter design of cylindrical symmetry with collector potentials of -40 to -100V, and observe systematically larger mass dependent isotopic fractionation for argon and neon, >=3% per amu and >=4% per amu, respectively. These fractionations scale approximately as Δm/m for all of the noble gases measured, consistent with the findings of Bernatowicz and coworkers. Experimental data at higher energies and predictions by TRIM (Transport of Ions in Matter) code simulations indicate that sticking probabilities may depend upon the mass ratios of projectile and target. Many natural environments for low-energy ion implantation existed in the early solar nebula, such as in dusty plasmas or in the interaction of the bipolar outflow with small grains or in the wind of the early active Sun with accreting planetesimals. Low-energy ions provide viable sources for gas loading onto nebular dust grains; the result is isotopic and elemental fractionation of the projectiles.

  7. A high-energy, high-current ion implantation system

    NASA Astrophysics Data System (ADS)

    Rose, Peter H.; Faretra, Ronald; Ryding, Geoffery

    1985-01-01

    High current (Pre-DepTM) ion implanters, operating at 80 keV, have met a need in the semiconductor industry. For certain processes, higher energies are required, either to penetrate a surface layer or to place the dopant ion at a greater depth. The Eaton/Nova Model NV10-160 Pre-DepTM Ion Implanter has been developed to meet those special needs. Beam currents as high as 10.0 mA are available at energies up to 160 keV for routine production applications. The system has also been qualified for low current, low dose operation (1011 ions cm-2) and this unique versatility provides the Process and Equipment Engineers with a powerful new tool. The Model NV10-160 also utilizes the Nova-designed, double disk interchange processing system to minimize inactive beam time so that wafer throughputs, up to 300 wafers/h, are achievable on a routine basis. DatalockTM, a computer driven implant monitoring system and AT-4, the Nova cassette-to-cassette wafer loader, are available as standard options. As a production machine, the Model NV10-160 with its high throughput capability, will reduce the implant cost per wafer significantly for doses above 10 × 1015 ions/cm2. Performance patterns are now emerging as some twenty-five systems have now been shipped. This paper summarizes the more important characteristics and reviews the major design features of the NV10-160.

  8. Er + medium energy ion implantation into lithium niobate

    NASA Astrophysics Data System (ADS)

    Svecova, B.; Nekvindova, P.; Mackova, A.; Oswald, J.; Vacik, J.; Grötzschel, R.; Spirkova, J.

    2009-05-01

    Erbium-doped lithium niobate (Er:LiNbO3) is a prospective photonics component, operating at 1.5 μm, which could find its use chiefly as an optical amplifier or waveguide laser. In this study, we have focused on the properties of the optically active Er:LiNbO3 layers, which are fabricated by medium energy ion implantation under various experimental conditions. Erbium ions were implanted at energies of 330 and 500 keV with fluences of 1.0 × 1015, 2.5 × 1015 and 1.0 × 1016 cm-2 into LiNbO3 single-crystalline cuts of various orientations. The as-implanted samples were annealed in air at 350 °C for 5 h. The depth distribution and diffusion profiles of the implanted Er were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The projected range RP and projected range straggling ΔRP were calculated employing the SRIM code. The damage distribution and structural changes were described using the RBS/channelling method. Changes of the lithium concentration depth distribution were studied by Neutron Depth Profiling (NDP). The photoluminescence spectra of the samples were measured to determine whether the emission was in the desired region of 1.5 μm. The obtained data made it possible to reveal the relations between the structural changes of erbium-implanted lithium niobate and its luminescence properties important for photonics applications.

  9. Energy loss of ions implanted in MOS dielectric films

    NASA Astrophysics Data System (ADS)

    Shyam, Radhey

    Energy loss measurements of ions in the low kinetic energy regime have been made on as-grown SiO2(170-190nm) targets. Singly charged Na + ions with kinetic energies of 2-5 keV and highly charged ions Ar +Q (Q=4, 8 and 11) with a kinetic energy of 1 keV were used. Excitations produced by the ion energy loss in the oxides were captured by encapsulating the irradiated oxide under a top metallic contact. The resulting Metal-Oxide-Semiconductor (MOS) devices were probed with Capacitance-Voltage (C V) measurements and extracted the flatband voltages from the C-V curves. The C-V results for singly charged ion experiments reveal that the changes in the flatband voltage and slope for implanted devices relative to the pristine devices can be used to delineate effects due to implanted ions only and ion induced damage. The data shows that the flatband voltage shifts and C-V slope changes are energy dependent. The observed changes in flatband voltage which are greater than those predicted by calculations scaled for the ion dose and implantation range (SRIM). These results, however, are consistent with a columnar recombination model, where electron-hole pairs are created due to the energy deposited by the implanted ions within the oxide. The remaining holes left after recombination losses are diffused through the oxide at the room temperature and remain present as trapped charges. Comparison of the data with the total number of the holes generated gives a fractional yield of 0.0124 which is of the same order as prior published high energy irradiation experiments. Additionally, the interface trap density, extracted from high and low frequency C-V measurements is observed to increase by one order of magnitude over our incident beam energy. These results confirm that dose- and kinetic energy -dependent effects can be recorded for singly charged ion irradiation on oxides using this method. Highly charged ion results also confirm that dose as well as and charge-dependent effects can

  10. Ion Implantation

    NASA Astrophysics Data System (ADS)

    Langouche, G.; Yoshida, Y.

    In this tutorial we describe the basic principles of the ion implantation technique and we demonstrate that emission Mössbauer spectroscopy is an extremely powerful technique to investigate the atomic and electronic configuration around implanted atoms. The physics of dilute atoms in materials, the final lattice sites and their chemical state as well as diffusion phenomena can be studied. We focus on the latest developments of implantation Mössbauer spectroscopy, where three accelerator facilities, i.e., Hahn-Meitner Institute Berlin, ISOLDE-CERN and RIKEN, have intensively been used for materials research in in-beam and on-line Mössbauer experiments immediately after implantation of the nuclear probes.

  11. Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter

    NASA Astrophysics Data System (ADS)

    Satoh, Shu; Yoon, Jongyoon; David, Jonathan

    2011-01-01

    Photoresist outgassing can significantly compromise accurate dosimetry of high energy implants. High energy implant even at a modest beam current produces high beam powers which create significantly worse outgassing than low and medium energy implants and the outgassing continues throughout the implant due to the low dose in typical high energy implant recipes. In the previous generation of high energy implanters, dose correction by monitoring of process chamber pressure during photoresist outgassing has been used. However, as applications diversify and requirements change, the need arises for a more versatile photoresist correction system to match the versatility of a single wafer high energy ion implanter. We have successfully developed a new dosimetry system for the Optima XE single wafer high energy ion implanter which does not require any form of compensation due to the implant conditions. This paper describes the principles and performance of this new dose system.

  12. Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter

    SciTech Connect

    Satoh, Shu; Yoon, Jongyoon; David, Jonathan

    2011-01-07

    Photoresist outgassing can significantly compromise accurate dosimetry of high energy implants. High energy implant even at a modest beam current produces high beam powers which create significantly worse outgassing than low and medium energy implants and the outgassing continues throughout the implant due to the low dose in typical high energy implant recipes. In the previous generation of high energy implanters, dose correction by monitoring of process chamber pressure during photoresist outgassing has been used. However, as applications diversify and requirements change, the need arises for a more versatile photoresist correction system to match the versatility of a single wafer high energy ion implanter. We have successfully developed a new dosimetry system for the Optima XE single wafer high energy ion implanter which does not require any form of compensation due to the implant conditions. This paper describes the principles and performance of this new dose system.

  13. Magnesium aluminate planar waveguides fabricated by C-ion implantation with different energies and fluences

    NASA Astrophysics Data System (ADS)

    Song, Hong-Lian; Yu, Xiao-Fei; Zhang, Lian; Wang, Tie-Jun; Qiao, Mei; Zhang, Jing; Liu, Peng; Wang, Xue-Lin

    2015-11-01

    We report on MgAl2O4 planar waveguides produced using different energies and fluences of C-ion implantation at room temperature. Based on the prism coupling method and end-face coupling measurements, light could propagate in the C-ion-implanted samples. The Raman spectra results indicate that the MgAl2O4 crystal lattice was damaged during the multi-energy C implantation process, whereas the absorption spectra were hardly affected by the C-ion implantation in the visible and infrared bands.

  14. Silicon solar cells by ion implantation and pulsed energy processing

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.; Minnucci, J. A.; Shaughnessy, T. S.; Greenwald, A. C.

    1976-01-01

    A new method for fabrication of silicon solar cells is being developed around ion implantation in conjunction with pulsed electron beam techniques to replace conventional furnace processing. Solar cells can be fabricated totally in a vacuum environment at room temperature. Cells with 10% AM0 efficiency have been demonstrated. High efficiency cells and effective automated processing capabilities are anticipated.

  15. Study on the Growth and the Photosynthetic Characteristics of Low Energy C+ Ion Implantation on Peanut

    PubMed Central

    Han, Yuguo; Xu, Lei; Yang, Peiling; Ren, Shumei

    2013-01-01

    Employing the Nonghua 5 peanut as experimental material, the effects of low energy C+ ion implantation on caulis height, root length, dry weight, photosynthetic characteristics and leaf water use efficiency (WUE) of Peanut Ml Generation were studied. Four fluences were observed in the experiment. The results showed that ion implantation harmed the peanut seeds because caulis height, root length and dry weight all were lower in the treatments than in CK, and the harm was aggravated with the increase of ion fluence. Both Pn and Tr show a saddle-shape curve due to midday depression of photosynthesis. Low fluence of low energy C+ ion implantation could increase the diurnal average Pn of peanut. The diurnal variation of Tr did not change as significantly as Pn. The light saturation point (LSP) was restrained by the ions. After low energy C+ ion implantation, WUE was enhanced. When the fluence increased to a certain level, the WUE began to decrease. PMID:23861939

  16. Defect studies of zirconia implanted by high energy Xe ions

    NASA Astrophysics Data System (ADS)

    Melikhova, O.; Čížek, J.; Procházka, I.; Hruška, P.; Skuratov, V. A.; Konstantinova, T. E.; Danilenko, I. A.

    2016-01-01

    In the present work positron lifetime spectroscopy was employed for characterization of radiation-induced defects in yttria stabilized zirconia (YSZ) implanted by 167 MeV Xe ions. Positron lifetime data were interpreted with aid of ab-initio theoretical modelling of defects in YSZ lattice. Damage caused by Xe implantation was investigated in two YSZ samples with different microstructure: (i) single crystal and (ii) sintered ceramic. The virgin YSZ single crystal exhibits single component spectrum with lifetime of ≈ 180 ps. Similar lifetime component was found also in the virgin sample of sintered YSZ ceramic. Since this lifetime is significantly higher than the YSZ bulk lifetime the virgin YSZ crystal and the sintered ceramic both contain vacancy-like defects. Xe implantation leads to appearance of additional defect component with longer lifetime ≈ 370 ps which comes obviously from vacancy clusters fonned by agglomeration of irradiation induced vacancies. A broad absorption band with peak absorption at ≈ 518 nm was found in Xe-implanted crystal by optical measurements.

  17. Characterization of high energy ion implantation into Ti-6Al-4V

    NASA Astrophysics Data System (ADS)

    Carroll, M. P.; Stephenson, K.; Findley, K. O.

    2009-06-01

    Ion implantation is a surface modification process that can improve the wear, fatigue, and corrosion resistance for several metals and alloys. Much of the research to date has focused on ion energies less than 1 MeV. With this in mind, Ti-6Al-4V was implanted with Al 2+, Au 3+, and N + ions at energies of 1.5 and 5 MeV and various doses to determine the effects on strengthening of a high energy beam. A post heat treatment on the specimens implanted with Al 2+ samples was conducted to precipitate Ti xAl type intermetallics near the surface. Novel techniques, such as nanoindentation, are available now to determine structure-mechanical property relationships in near-surface regions of the implanted samples. Thus, nanoindentation was performed on pre-implanted, as-implanted, and post heat treated samples to detect differences in elastic modulus and hardness at the sub-micron scale. In addition, sliding wear tests were performed to qualitatively determine the changes in wear performance. The effect of this processing was significant for samples implanted with Al 2+ ions at 1.5 MeV with a dose higher than 1 × 10 16 ions/cm 2 where precipitation hardening likely occurs and with N + ions.

  18. Investigation of Mn-implanted n-Si by low-energy ion beam deposition

    NASA Astrophysics Data System (ADS)

    Liu, Lifeng; Chen, Nuofu; Song, Shulin; Yin, Zhigang; Yang, Fei; Chai, Chunlin; Yang, Shaoyan; Liu, Zhikai

    2005-01-01

    Mn ions were implanted to n-type Si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 eV and a dose of 7.5×10 17 cm -2. The samples were held at room temperature and at 300 °C during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300 °C than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300 °C is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300 °C has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300 °C shows ferromagnetic behavior at room temperature.

  19. Sources and transport systems for low energy extreme of ion implantation

    SciTech Connect

    Hershcovitch, A.; Batalin, V.A.; Bugaev, A.S.; Gushenets, V.I.; Alexeyenko, O.; Gurkova, E.; Johnson, B.M.; Kolomiets, A.A.; Kropachev, G.N.; Kuibeda, R.P.; Kulevoy, T.V.; Masunov, E.S.; Oks, E.M.; Pershin, V.I.; Polozov, S.M.; Poole, H.J.; Seleznev, D.N.; Storozhenko, P.A.; Vizir, A.; Svarovski, A.Ya.; Yakushin, P.; Yushkov, G.Yu.

    2010-06-06

    For the past seven years a joint research and development effort focusing on the design of steady state, intense ion sources has been in progress with the ultimate goal being to meet the two, energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. However, since the last Fortier is low energy ion implantation, focus of the endeavor has shifted to low energy ion implantation. For boron cluster source development, we started with molecular ions of decaborane (B{sub 10}H{sub 14}), octadecaborane (B{sub 18}H{sub 22}), and presently our focus is on carborane (C{sub 2}B{sub 10}H{sub 12}) ions developing methods for mitigating graphite deposition. Simultaneously, we are developing a pure boron ion source (without a working gas) that can form the basis for a novel, more efficient, plasma immersion source. Our Calutron-Berna ion source was converted into a universal source capable of switching between generating molecular phosphorous P{sub 4}{sup +}, high charge state ions, as well as other types of ions. Additionally, we have developed transport systems capable of transporting a very large variety of ion species, and simulations of a novel gasless/plasmaless ion beam deceleration method were also performed.

  20. Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

    NASA Technical Reports Server (NTRS)

    Fonash, S. J.; Sigh, R.; Mu, H. C.

    1986-01-01

    The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

  1. Application of a pulsed, RF-driven, multicusp source for low energy plasma immersion ion implantation

    SciTech Connect

    Wengrow, A.B.; Leung, K.N.; Perkins, L.T.; Pickard, D.S.; Rickard, M.; Williams, M.D.; Tucker, M.

    1996-06-01

    The multicusp ion source can produce large volumes of uniform, quiescent, high density plasmas. A plasma chamber suited for plasma immersion ion implantation (PIII) was readily made. Conventional PIII pulses the bias voltage applied to the substrate which is immersed in a CW mode plasma. Here, a method by which the plasma itself is pulsed was developed. Typically pulse lengths of 500 {mu}s are used and are much shorter than that of the substrate voltage pulse (5-15 ms). This approach, together with low gas pressures and low bias voltages, permits the constant energy implantation of an entire wafer simultaneously without glow discharge. Results show that this process can yield implant currents of up to 2.5 mA/cm{sup 2}; thus very short implant times can be achieved. Uniformity of the ion flux is also discussed. As this method can be scaled to any dimension, it can be made to handle any size wafer.

  2. Use of low energy hydrogen ion implants in high efficiency crystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Fonash, S. J.; Singh, R.

    1985-01-01

    This program is a study of the use of low energy hydrogen ion implantation for high efficiency crystalline silicon solar cells. The first quarterly report focuses on two tasks of this program: (1) an examination of the effects of low energy hydrogen implants on surface recombination speed; and (2) an examination of the effects of hydrogen on silicon regrowth and diffusion in silicon. The first part of the project focussed on the measurement of surface properties of hydrogen implanted silicon. Low energy hydrogen ions when bombarded on the silicon surface will create structural damage at the surface, deactivate dopants and introduce recombination centers. At the same time the electrically active centers such as dangling bonds will be passivated by these hydrogen ions. Thus hydrogen is expected to alter properties such as the surface recombination velocity, dopant profiles on the emitter, etc. In this report the surface recombination velocity of a hydrogen emplanted emitter was measured.

  3. Low-energy ion implantation: Large mass fractionation of argon

    NASA Technical Reports Server (NTRS)

    Ponganis, K. V.; Graf, TH.; Marti, K.

    1993-01-01

    The isotropic signatures of noble gases in the atmospheres of the Earth and other planets are considerably evolved when compared to signatures observed in the solar wind. The mechanisms driving the evolution of planetary volatiles from original compositions in the solar accretion disk are currently poorly understood. Modeling of noble-gas compositional histories requires knowledge of fractionating processes that may have operated through the evolutionary stages. Since these gases are chemically inert, information on noble-gas fractionation processes can be used as probes. The importance of understanding these processes extends well beyond 'noble-gas planetology.' Trapped argon acquired by low-energy implantation (approximately less than 100 eV) into solids is strongly mass fractionated (approximately greater than or equal to 3 percent/amu). This has potential implications for the origin and evolution of terrestrial planet atmospheres.

  4. Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy

    DOEpatents

    Boatner, Lynn A.; Rankin, Janet; Thevenard, Paul; Romana, Laurence J.

    1995-01-01

    A method for tailoring or patterning the surface of ceramic articles is provided by implanting ions to predetermined depth into the ceramic material at a selected surface location with the ions being implanted at a fluence and energy adequate to damage the lattice structure of the ceramic material for bi-axially straining near-surface regions of the ceramic material to the predetermined depth. The resulting metastable near-surface regions of the ceramic material are then contacted with energy pulses from collapsing, ultrasonically-generated cavitation bubbles in a liquid medium for removing to a selected depth the ion-damaged near-surface regions containing the bi-axially strained lattice structure from the ceramic body. Additional patterning of the selected surface location on the ceramic body is provided by implanting a high fluence of high-energy, relatively-light ions at selected surface sites for relaxing the bi-axial strain in the near-surface regions defined by these sites and thereby preventing the removal of such ion-implanted sites by the energy pulses from the collapsing ultrasonic cavitation bubbles.

  5. Sputtering induced changes in defect morphology and dopant diffusion for Si implanted GaAs: Influence of ion energy and implant temperature

    SciTech Connect

    Robinson, H.G.; Deal, M.D.; Lee, C.C.; Haynes, T.E.; Allen, E.L.; Jones, K.S.

    1994-12-01

    Experimental observations of dopant diffusion and defect formation are reported vs ion energy and implant temperature in Si-implanted GaAs. In higher energy implants (>100 keV), little or no diffusion occurs, while at energies less than 100 keV, the amount of dopant redistribution is inversely proportional to energy. Extended defect density shows the opposite trend, increasing with ion energy. Similarly, Si diffusion during post implant annealing decreases by a factor of 2.5 as the implant temperature increases from -2 to 40 C. In this same temperature range, maximum depth and density of extrinsic dislocation loops increases by factors of 3 and 4, respectively. Rutherford backscattering channeling indicates that Si- implanted GaAs undergoes an amorphous-to-crystalline transition at Si implant temperatures between -51 and 40 C. A unified explanation of the effects of ion energy and implant temperature on both diffusion and dislocation formation is proposed based on known differences in sputter yields between low and high energy ions and crystalline and amorphous semiconductors. The model assumes that the sputter yield is enhanced at low implant energies and by amorphization, thus increasing the excess vacancy concentration. Estimates of excess vacancy concentration are obtained by simulations of the diffusion profiles and are quantitatively consistent with a realistic sputter yield enhancement. Removal of the vacancy-rich surface by etching prior to annealing completely suppresses the Si diffusion and increases the dislocation density, lending further experimental support to the model.

  6. High energy metal ion implantation using `Magis`, a novel, broad-beam, Marx-generator-based ion source

    SciTech Connect

    Anders, A.; Brown, I.G.; Dickinson, M.R.; MacGill, R.A.

    1996-08-01

    Ion energy of the beam formed by an ion source is proportional to extractor voltage and ion charge state. Increasing the voltage is difficult and costly for extraction voltage over 100 kV. Here we explore the possibility of increasing the charge states of metal ions to facilitate high-energy, broad beam ion implantation at a moderate voltage level. Strategies to enhance the ion charge state include operating in the regimes of high-current vacuum sparks and short pulses. Using a time-of-flight technique we have measured charge states as high as 7+ (73 kA vacuum spark discharge) and 4+ (14 kA short pulse arc discharge), both for copper, with the mean ion charge states about 6.0 and 2.5, respectively. Pulsed discharges can conveniently be driven by a modified Marx generator, allowing operation of ``Magis`` with a single power supply (at ground potential) for both plasma production and ion extraction.

  7. Study of Biological Effects of Low Energy Ion Implantation on Tomato and Radish Breeding

    NASA Astrophysics Data System (ADS)

    Liang, Qiuxia; Huang, Qunce; Cao, Gangqiang; Ying, Fangqing; Liu, Yanbo; Huang, Wen

    2008-04-01

    Biological effects of 30 keV low energy nitrogen ion implantation on the seeds of five types of tomato and one type of radish were investigated. Results showed that low energy ions have different effects on different vegetables. The whole dose-response curve of the germination ratio did not take on "the shape of saddle", but was a rising and falling waveform with the increase or decrease in ion implantation. In the vegetable of Solanaceae, two outstanding aberrant plants were selected from M1 of Henan No.4 tomato at a dose of 7 × 1017 nitrogen ions/cm2, which had thin-leaves, long-petal and nipple tip fruit stably inherited to M7. Furthermore the analysis of the isozyme showed that the activity of the mutant tomato seedling was distinct in quantity and color. In Raphanus sativus L., the aberrances were obvious in the mutant of radish 791 at a dose of 5 × 1017 nitrogen ions/cm2, and the weight of succulent root and the volume of growth were over twice the control's. At present, many species for breeding have been identified in the field and only stable species have been selected for the experiment of production. It is evident that the low energy ion implantation technology has clear effects on vegetables' genetic improvement.

  8. Development of Linear Mode Detection for Top-down Ion Implantation of Low Energy Sb Donors

    NASA Astrophysics Data System (ADS)

    Pacheco, Jose; Singh, Meenakshi; Bielejec, Edward; Lilly, Michael; Carroll, Malcolm

    2015-03-01

    Fabrication of donor spin qubits for quantum computing applications requires deterministic control over the number of implanted donors and the spatial accuracy to within which these can be placed. We present an ion implantation and detection technique that allows us to deterministically implant a single Sb ion (donor) with a resulting volumetric distribution of <10 nm. This donor distribution is accomplished by implanting 30keV Sb into Si which yields a longitudinal straggle of <10 nm and combined with a <50 nm spot size using the Sandia NanoImplanter (nI). The ion beam induced charge signal is collected using a MOS detector that is integrated with a Si quantum dot for transport measurments. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  9. Low flux and low energy helium ion implantation into tungsten using a dedicated plasma source

    NASA Astrophysics Data System (ADS)

    Pentecoste, Lucile; Thomann, Anne-Lise; Melhem, Amer; Caillard, Amael; Cuynet, Stéphane; Lecas, Thomas; Brault, Pascal; Desgardin, Pierre; Barthe, Marie-France

    2016-09-01

    The aim of this work is to investigate the first stages of defect formation in tungsten (W) due to the accumulation of helium (He) atoms inside the crystal lattice. To reach the required implantation conditions, i.e. low He ion fluxes (1011-1014 ions.cm2.s-1) and kinetic energies below the W atom displacement threshold (about 500 eV for He+), an ICP source has been designed and connected to a diffusion chamber. Implantation conditions have been characterized by means of complementary diagnostics modified for measurements in this very low density helium plasma. It was shown that lowest ion fluxes could only be reached for the discharge working in capacitive mode either in α or γ regime. Special attention was paid to control the energy gained by the ions by acceleration through the sheath at the direct current biased substrate. At very low helium pressure, in α regime, a broad ion energy distribution function was evidenced, whereas a peak centered on the potential difference between the plasma and the biased substrate was found at higher pressures in the γ mode. Polycrystalline tungsten samples were exposed to the helium plasma in both regimes of the discharge and characterized by positron annihilation spectroscopy in order to detect the formed vacancy defects. It was found that W vacancies are able to be formed just by helium accumulation and that the same final implanted state is reached, whatever the operating mode of the capacitive discharge.

  10. The examination of calcium ion implanted alumina with energy filtered transmission electron microscopy

    SciTech Connect

    Hunt, E.M.; Hampikian, J.M.; Evans, N.D.

    1997-04-01

    Ion implantation can be used to alter in the optical response of insulators through the formation of embedded nano-sized particles. Single crystal alumina has been implanted at ambient temperature with 50 keV Ca{sup +} to a fluence of 5 {times} 10{sup 16} ions/cm{sup 2}. Ion channeling, Knoop microhardness measurements, and transmission electron microscopy (TEM) indicate that the alumina surface layer was amorphized by the implant. TEM also revealed nano-sized crystals {approx}7--8 nm in diameter. These nanocrystals are randomly oriented, and exhibit a face-centered cubic structure (FCC) with a lattice parameter of 0.409 nm {+-} 0.002 nm. The similarity between this crystallography and that of pure aluminum suggests that they are metallic aluminum nanocrystals with a slightly dilated lattice parameter, possibly due to the incorporation of a small amount of calcium. Energy-filtered transmission electron microscopy (EFTEM) provides an avenue by which to confirm the metallic nature of the aluminum involved in the nanocrystals. EFTEM has confirmed that the aluminum present in the particles is metallic in nature, that the particles are oxygen deficient in comparison with the matrix material and that the particles are deficient in calcium, and therefore not likely to be calcia. The particles thus appear to be FCC Al (possibly alloyed with a few percent Ca) with a lattice parameter of 0.409nm. A similar result was obtained for yttrium ion implantation into alumina.

  11. Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.; Meier, D. L.; Rai-Choudhury, P.; Fonash, S. J.; Singh, R.

    1986-01-01

    The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

  12. Improving low-energy boron/nitrogen ion implantation in graphene by ion bombardment at oblique angles

    NASA Astrophysics Data System (ADS)

    Bai, Zhitong; Zhang, Lin; Liu, Ling

    2016-04-01

    Ion implantation is a widely adopted approach to structurally modify graphene and tune its electrical properties for a variety of applications. Further development of the approach requires a fundamental understanding of the mechanisms that govern the ion bombardment process as well as establishment of key relationships between the controlling parameters and the dominant physics. Here, using molecular dynamics simulations with adaptive bond order calculations, we demonstrate that boron and nitrogen ion bombardment at oblique angles (particularly at 70°) can improve both the productivity and quality of perfect substitution by over 25%. We accomplished this by systematically analyzing the effects of the incident angle and ion energy in determining the probabilities of six distinct types of physics that may occur in an ion bombardment event, including reflection, absorption, substitution, single vacancy, double vacancy, and transmission. By analyzing the atomic trajectories from 576 000 simulations, we identified three single vacancy creation mechanisms and four double vacancy creation mechanisms, and quantified their probability distributions in the angle-energy space. These findings further open the door for improved control of ion implantation towards a wide range of applications of graphene.Ion implantation is a widely adopted approach to structurally modify graphene and tune its electrical properties for a variety of applications. Further development of the approach requires a fundamental understanding of the mechanisms that govern the ion bombardment process as well as establishment of key relationships between the controlling parameters and the dominant physics. Here, using molecular dynamics simulations with adaptive bond order calculations, we demonstrate that boron and nitrogen ion bombardment at oblique angles (particularly at 70°) can improve both the productivity and quality of perfect substitution by over 25%. We accomplished this by systematically

  13. Modeling of Inner Surface Modification of a Cylindrical Tube by Plasma-Based Low-Energy Ion Implantation

    NASA Astrophysics Data System (ADS)

    Zheng, Bocong; Wang, Kesheng; Lei, Mingkai

    2015-04-01

    The inner surface modification process by plasma-based low-energy ion implantation (PBLEII) with an electron cyclotron resonance (ECR) microwave plasma source located at the central axis of a cylindrical tube is modeled to optimize the low-energy ion implantation parameters for industrial applications. In this paper, a magnetized plasma diffusion fluid model has been established to describe the plasma nonuniformity caused by plasma diffusion under an axial magnetic field during the pulse-off time of low pulsed negative bias. Using this plasma density distribution as the initial condition, a sheath collisional fluid model is built up to describe the sheath evolution and ion implantation during the pulse-on time. The plasma nonuniformity at the end of the pulse-off time is more apparent along the radial direction compared with that in the axial direction due to the geometry of the linear plasma source in the center and the difference between perpendicular and parallel plasma diffusion coefficients with respect to the magnetic field. The normalized nitrogen plasma densities on the inner and outer surfaces of the tube are observed to be about 0.39 and 0.24, respectively, of which the value is 1 at the central plasma source. After a 5 μs pulse-on time, in the area less than 2 cm from the end of the tube, the nitrogen ion implantation energy decreases from 1.5 keV to 1.3 keV and the ion implantation angle increases from several degrees to more than 40° both variations reduce the nitrogen ion implantation depth. However, the nitrogen ion implantation dose peaks of about 2×1010 - 7×1010 ions/cm2 in this area are 2 - 4 times higher than that of 1.18×1010 ions/cm2 and 1.63×1010 ions/cm2 on the inner and outer surfaces of the tube. The sufficient ion implantation dose ensures an acceptable modification effect near the end of the tube under the low energy and large angle conditions for nitrogen ion implantation, because the modification effect is mainly determined by the

  14. Nitrogen mass transfer models for plasma-based low-energy ion implantation

    SciTech Connect

    Zheng, Bocong; Wang, Kesheng; Zhang, Zhipeng; Che, Honglong; Lei, Mingkai

    2015-03-15

    The nitrogen mass transfer process in plasma-based low-energy ion implantation (PBLEII) is theoretically and experimentally studied in order to explore the process mechanism of PBLEII and therefore to optimize the apparatus design and the process conditions. An electron cyclotron resonance (ECR) microwave discharge generates the nitrogen plasma with a high density of 10{sup 11}–10{sup 12} ions/cm{sup 3}, which diffuses downstream to the process chamber along the divergent magnetic field. The nitrogen ions in the plasma implant into the surface and transport to the matrix of an austenitic stainless steel under the low negative pulsed bias of −2 kV at a process temperature of 400 °C. A global plasma model is used to simulate the ECR microwave plasma discharge for a range of working pressures and microwave powers. The fluid models are adopted to calculate the plasma downstream diffusion, the sheath expansion and the low-energy ion implantation on the surface. A nonlinear kinetic discrete model is established to describe the nitrogen transport in the austenitic stainless steel and the results are compared with the experimental measurements. Under an average implantation current density of 0.3–0.6 mA/cm{sup 2}, the surface nitrogen concentration in the range from 18.5 to 29 at. % is a critical factor for the nitrogen transport in the AISI 304 austenitic stainless steel by PBLEII, which accelerates the implanted nitrogen diffusion inward up to 6–12 μm during a nitriding time of 4 h.

  15. Photovoltage improvements in Cz–Si by low-energy implantation of carbon ions

    NASA Astrophysics Data System (ADS)

    Nadtochiy, A.; Korotchenkov, O.; Romanyuk, B.; Melnik, V.; Popov, V.

    2016-05-01

    We demonstrate photovoltage improvements in Czochralski-grown silicon wafers by low-energy implantation of carbon ions. After annealing at temperatures above ≈550 °C the surface photovoltage (SPV) increases in both implanted and unimplanted sample sets. The increase in the SPV signal observed in implanted samples, which are subsequently annealed at 650 °C and 750 °C, is roughly two times greater than the appropriate values observed in unimplanted wafers. The effect in implanted samples is accompanied by longer time decays in the SPV transients (roughly from several to hundreds of microseconds). In marked contrast, unimplanted samples do not show such a significant difference in the decay times upon annealing. The decay times are fairly evenly distributed across the surface of the implanted but unannealed wafer, whereas the surface distribution function is essentially non-uniform in annealed samples. The results are discussed in terms of the temperature specific defect chemistry. The results of this work open new possibilities for studying defect rearrangement and clustering of atoms in implanted Si and advancing the development of silicon based photovoltaic materials with high photovoltage response. Supplementary data are available from stacks.iop.org/SST/.

  16. Broad beam ion implanter

    DOEpatents

    Leung, Ka-Ngo

    1996-01-01

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

  17. Broad beam ion implanter

    DOEpatents

    Leung, K.N.

    1996-10-08

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.

  18. Low-energy plasma immersion ion implantation to induce DNA transfer into bacterial E. coli

    NASA Astrophysics Data System (ADS)

    Sangwijit, K.; Yu, L. D.; Sarapirom, S.; Pitakrattananukool, S.; Anuntalabhochai, S.

    2015-12-01

    Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 1012 to 1 × 1017 ions/cm2 treated cells of Escherichia coli (E. coli). Subsequently, DNA transfer was operated by mixing the PIII-treated cells with DNA. Successes in PIII-induced DNA transfer were demonstrated by marker gene expressions. The induction of DNA transfer was ion-energy, fluence and DNA-size dependent. The DNA transferred in the cells was confirmed functioning. Mechanisms of the PIII-induced DNA transfer were investigated and discussed in terms of the E. coli cell envelope anatomy. Compared with conventional ion-beam-induced DNA transfer, PIII-induced DNA transfer was simpler with lower cost but higher efficiency.

  19. Enhanced nitrogen and phosphorus removal from eutrophic lake water by Ipomoea aquatica with low-energy ion implantation.

    PubMed

    Li, Miao; Wu, Yue-Jin; Yu, Zeng-Liang; Sheng, Guo-Ping; Yu, Han-Qing

    2009-03-01

    Ipomoea aquatica with low-energy N+ ion implantation was used for the removal of both nitrogen and phosphorus from the eutrophic Chaohu Lake, China. The biomass growth, nitrate reductase and peroxidase activities of the implanted I. aquatica were found to be higher than those of I. aquatica without ion implantation. Higher NO3-N and PO4-P removal efficiencies were obtained for the I. aquatica irradiation at 25 keV, 3.9 x 10(16) N+ ions/cm(2) and 20 keV 5.2 x 10(16) N+ ions/cm(2), respectively (p < 0.05). Moreover, the nitrogen and phosphorus contents in the plant biomass with ion implantation were also greater than those of the controls. I. aquatica with ion implantation was directly responsible for 51-68% N removal and 54-71% P removal in the three experiments. The results further confirm that the ion implantation could enhance the growth potential of I. aquatica in real eutrophic water and increase its nutrient removal efficiency. Thus, the low-energy ion implantation for aquatic plants could be considered as an approach for in situ phytoremediation and bioremediation of eutrophic waters. PMID:19147171

  20. Controlled ion implant damage profile for etching

    DOEpatents

    Arnold, Jr., George W.; Ashby, Carol I. H.; Brannon, Paul J.

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  1. Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic, and Transport Properties.

    PubMed

    Willke, Philip; Amani, Julian A; Sinterhauf, Anna; Thakur, Sangeeta; Kotzott, Thomas; Druga, Thomas; Weikert, Steffen; Maiti, Kalobaran; Hofsäss, Hans; Wenderoth, Martin

    2015-08-12

    We investigate the structural, electronic, and transport properties of substitutional defects in SiC-graphene by means of scanning tunneling microscopy and magnetotransport experiments. Using ion incorporation via ultralow energy ion implantation, the influence of different ion species (boron, nitrogen, and carbon) can directly be compared. While boron and nitrogen atoms lead to an effective doping of the graphene sheet and can reduce or raise the position of the Fermi level, respectively, (12)C(+) carbon ions are used to study possible defect creation by the bombardment. For low-temperature transport, the implantation leads to an increase in resistance and a decrease in mobility in contrast to undoped samples. For undoped samples, we observe in high magnetic fields a positive magnetoresistance that changes to negative for the doped samples, especially for (11)B(+)- and (12)C(+)-ions. We conclude that the conductivity of the graphene sheet is lowered by impurity atoms and especially by lattice defects, because they result in weak localization effects at low temperatures. PMID:26120803

  2. Biological effects of low energy nitrogen ion implantation on Jatropha curcas L. seed germination

    NASA Astrophysics Data System (ADS)

    Xu, Gang; Wang, Xiao-teng; Gan, Cai-ling; Fang, Yan-qiong; Zhang, Meng

    2012-09-01

    To explore the biological effects of nitrogen ion beam implantation on dry Jatropha curcas seed, a beam of N+ with energy of 25 keV was applied to treat the dry seed at six different doses. N+ beam implantation greatly decreased germination rate and seedling survival rate. The doses within the range of 12 × 1016 to 15 × 1016 ions cm-2 severely damaged the seeds: total antioxidant capacity (TAC), germination rate, seedling survival rate, reduced ascorbate acid (HAsA) and reduced glutathione (GSH) contents, and most of the tested antioxidases activity (i.e. catalase (CAT), ascorbate peroxidase (APX) and superoxide dismutase (SOD)) reached their lowest levels. At a dose of 18 × 1016 ion cm-2, biological repair took place: moderate increases were found in TAC, germination rate, seedling survival rate, HAsA and GSH contents, and some antioxidant enzyme activities (i.e. CAT, APX, SOD and GPX). The dose of 18 × 1016 ions cm-2 may be the optimum dose for use in dry J. curcas seed mutation breeding. CAT, HAsA and GSH contributed to the increase of TAC, but CAT was the most important. POD performed its important role as seed was severely damaged. The main role of the HAsA-GSH cycle appeared to be for regeneration of HAsA.

  3. Defect diffusion during annealing of low-energy ion-implanted silicon

    SciTech Connect

    Bedrossian, P J; Caturla, M-J; Diaz de la Rubia, T

    2000-03-08

    We present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7x7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, we observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underly the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations.

  4. Beam energy tracking system on Optima XEx high energy ion implanter

    SciTech Connect

    David, Jonathan; Satoh, Shu; Wu Xiangyang; Geary, Cindy; Deluca, James

    2012-11-06

    The Axcelis Optima XEx high energy implanter is an RF linac-based implanter with 12 RF resonators for beam acceleration. Even though each acceleration field is an alternating, sinusoidal RF field, the well known phase-focusing principle produces a beam with a sharp quasi-monoenergetic energy spectrum. A magnetic energy filter after the linac further attenuates the low energy continuum in the energy spectrum often associated with RF acceleration. The final beam energy is a function of the phase and amplitude of the 12 resonators in the linac. When tuning a beam, the magnetic energy filter is set to the desired energy, and each linac parameter is tuned to maximize the transmission through the filter. Once a beam is set up, all the parameters are stored in a recipe, which can be easily tuned and has proven to be quite repeatable. The magnetic field setting of the energy filter selects the beam energy from the RF Linac accelerator, and in-situ verification of beam energy in addition to the magnetic energy filter setting has long been desired. An independent energy tracking system was developed for this purpose, using the existing electrostatic beam scanner as a deflector to construct an in-situ electrostatic energy analyzer. This paper will describe the system and performance of the beam energy tracking system.

  5. Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

    NASA Astrophysics Data System (ADS)

    Abraham, J. B. S.; Aguirre, B. A.; Pacheco, J. L.; Vizkelethy, G.; Bielejec, E.

    2016-08-01

    We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. The ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

  6. Ion implantation in silicate glasses

    SciTech Connect

    Arnold, G.W.

    1993-12-01

    This review examines the effects of ion implantation on the physical properties of silicate glasses, the compositional modifications that can be brought about, and the use of metal implants to form colloidal nanosize particles for increasing the nonlinear refractive index.

  7. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  8. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  9. Ion implantation at elevated temperatures

    SciTech Connect

    Lam, N.Q.; Leaf, G.K.

    1985-11-01

    A kinetic model has been developed to investigate the synergistic effects of radiation-enhanced diffusion, radiation-induced segregation and preferential sputtering on the spatial redistribution of implanted solutes during implantation at elevated temperatures. Sample calculations were performed for Al and Si ions implanted into Ni. With the present model, the influence of various implantation parameters on the evolution of implant concentration profiles could be examined in detail.

  10. Amorphous Ge quantum dots embedded in SiO{sub 2} formed by low energy ion implantation

    SciTech Connect

    Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

    2008-06-15

    Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO{sub 2}, i.e., Ge-SiO{sub 2} quantum dot composites, have been formed by ion implantation of {sup 74}Ge{sup +} isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO{sub 2} obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed.

  11. Range and Annealing Behaviour of Pb+ Ions Implanted into LiNbO3 Crystals at Moderate Energies

    NASA Astrophysics Data System (ADS)

    Chen, Feng; Hu, Hui; Zhang, Jian-Hua; Liu, Xiang-Dong; Xia, Hui-Hao; Shi, Bo-Rong; Wang, Ke-Ming

    2002-01-01

    Pb+ ions have been implanted into LiNbO3 crystals in the energy range of 100-350 keV at doses of 5×1015, 1×1016 and 2×1016 ions/cm2. The profile of the implanted ions was measured by Rutherford backscattering. The mean projected range and the range straggling obtained from the experiment were compared with the TRIM'98 and SRIM 2000 code. In the present case, the TRIM'98 code predicts experimental values better than those of the SRIM 2000 code. The depth distribution is also found to be independent of dose for 350 keV Pb+ implanted into LiNbO3 crystals. After 800°C annealing for 60 min in ambient air, obvious diffusion occurs to the implanted Pb+ ions at 150 keV with a dose of 5×1015 ions/cm2. After a low-temperature treatment at 77 K in liquid nitrogen, no obvious diffusion phenomenon occurs for the implanted Pb+ ions in LiNbO3.

  12. Metal Ion Sources for Ion Beam Implantation

    SciTech Connect

    Zhao, W. J.; Zhao, Z. Q.; Ren, X. T.

    2008-11-03

    In this paper a theme touched upon the progress of metal ion sources devoted to metal ion beam implantation (MIBI) will be reviewed. A special emphasis will be given to some kinds of ion sources such as ECR, MEVVA and Cluster ion sources. A novel dual hollow cathode metal ion source named DUHOCAMIS will be introduced and discussed.

  13. Creation of High-Yield Polyhydroxyalkanoates Engineered Strains by Low Energy Ion Implantation

    NASA Astrophysics Data System (ADS)

    Qian, Shiquan; Cheng, Ying; Zhu, Suwen; Cheng, Beijiu

    2008-12-01

    Polyhydroxyalkanoates (PHAs), as a candidate for biodegradable plastic materials, can be synthesized by numerous microorganisms. However, as its production cost is high in comparison with those of chemically synthesized plastics, a lot of research has been focused on the efficient production of PHAs using different methods. In the present study, the mutation effects of PHAs production in strain pCB4 were investigated with implantation of low energy ions. It was found that under the implantation conditions of 7.8 × 1014 N+/cm2 at 10 keV, a high-yield PHAs strain with high genetic stability was generated from many mutants. After optimizing its fermentation conditions, the biomass, PHAs concentration and PHAs content of pCBH4 reached 2.26 g/L, 1.81 g/L, and 80.08% respectively, whereas its wild type controls were about 1.24 g/L, 0.61 g/L, and 49.20%. Moreover, the main constituent of PHAs was identified as poly-3-hydroxybutyrates (PHB) in the mutant stain and the yield of this compound was increased up to 41.33% in contrast to that of 27.78% in the wild type strain.

  14. Versatile high current metal ion implantation facility

    SciTech Connect

    Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

    1991-06-01

    A metal ion implantation facility has been developed with which high current beams of practically all the solid metals of the periodic table can be produced. A multi-cathode, broad beam, metal vapor vacuum arc ion source is used to produce repetitively pulsed metal ion beams at an extraction voltage of up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion-charge state multiplicity, and with a beam current of up to several amperes peak pulsed and several tens of mA time averaged delivered onto a downstream target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we summarize some of the features of the ion source and the implantation facility that has been built up around it. 28 refs., 5 figs.

  15. Research on the Distant Hybrids of Wheat Obtained via Low-Energy Ion-Beam Implantation

    NASA Astrophysics Data System (ADS)

    Chang, Shouwei; Cheng, Yuhong; Qin, Guangyong; Su, Mingjie

    2003-06-01

    The whole DNA of soybean was implanted into four varieties of wheat of Zhongyu 5, Huaiyin 9628, Wenyou 1, Jimai 5 respectively via ion-beam mediation. There were 5 plants obtained whose protein content was higher than 18.5%, the highest one was 21.44%. There were 3 plants obtained whose protein content was lower than 11.5%, the lowest one was 10.96%. We can see that the whole DNA of soybean transformed into wheat via ion beam implantation can induce the increase in wheat protein content dramatically. The result also shows that the transformation efficiency of different gene types of wheat receptor varies greatly that the implanting time has a certain effect on the efficiency of transformation.

  16. Tungsten contamination in ion implantation

    NASA Astrophysics Data System (ADS)

    Polignano, M. L.; Barbarossa, F.; Galbiati, A.; Magni, D.; Mica, I.

    2016-06-01

    In this paper the tungsten contamination in ion implantation processes is studied by DLTS analysis both in typical operating conditions and after contamination of the implanter by implantation of wafers with an exposed tungsten layer. Of course the contaminant concentration is orders of magnitude higher after contamination of the implanter, but in addition our data show that different mechanisms are active in a not contaminated and in a contaminated implanter. A moderate tungsten contamination is observed also in a not contaminated implanter, however in that case contamination is completely not energetic and can be effectively screened by a very thin oxide. On the contrary, the contamination due to an implantation in a previously contaminated implanter is reduced but not suppressed even by a relatively thick screen oxide. The comparison with SRIM calculations confirms that the observed deep penetration of the contaminant cannot be explained by a plain sputtering mechanism.

  17. Graphene synthesis by ion implantation

    PubMed Central

    Garaj, Slaven; Hubbard, William; Golovchenko, J. A.

    2010-01-01

    We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate. PMID:21124725

  18. Graphene synthesis by ion implantation

    NASA Astrophysics Data System (ADS)

    Garaj, Slaven; Hubbard, William; Golovchenko, J. A.

    2010-11-01

    We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate.

  19. Graphene synthesis by ion implantation.

    PubMed

    Garaj, Slaven; Hubbard, William; Golovchenko, J A

    2010-11-01

    We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate. PMID:21124725

  20. Surface Oxidation Effects During Low Energy BF{sub 2}{sup +} Ion Implantation

    SciTech Connect

    Kondratenko, Serguei; Hsu, P. K.; Zhao, Hongchen; Reece, Ronald N.

    2011-01-07

    We present results on silicon wafer surface oxidation observed during low energy high dose BF{sub 2}{sup +} implantation. Experiments were performed on single-crystal and pre-amorphized silicon wafers that help elucidate the surface structure impact on boron distribution profiles and dose retention. Implanters with different architectures were compared including both single wafer and batch systems. It was found that the oxidation rate depends on implanter type and design, and that the surface oxide thickness is a linear function of implantation dose and time. Surface oxidation is significantly higher for batch systems compared to single wafer tools. This is due primarily to the significantly lower beam duty cycle on the batch implanter. The oxide thicknesses estimated from SIMS oxygen profiles are in agreement with ellipsometry measurements after spike annealing, and show a similar difference between single wafer and batch implanters. SIMS boron distribution profiles after implantation were compared and used to calculate retained dose. In the medium dose range ({<=}3x10{sup 14} at/cm{sup 2}) the profiles from different implanters are well matched and the dose retention is close to 100%. For the higher dose range ({>=}3x10{sup 15} at/cm{sup 2}) retention for the batch implanter is significantly less than the single wafer tool and depends on the wafer surface structure. A higher oxidation rate results in lower dopant activation and higher Rs value after spike annealing. For high implantation doses the single wafer system allows much higher dose retention and better boron activation after annealing.

  1. Ion implantation of solar cell junctions without mass analysis

    NASA Technical Reports Server (NTRS)

    Fitzgerald, D.; Tonn, D. G.

    1981-01-01

    This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

  2. Highly Stripped Ion Sources for MeV Ion Implantation

    SciTech Connect

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  3. Ion sources for ion implantation technology (invited)

    SciTech Connect

    Sakai, Shigeki Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki

    2014-02-15

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

  4. Investigation of various phases of Fe-Si structures formed in Si by low energy Fe ion implantation

    NASA Astrophysics Data System (ADS)

    Lakshantha, Wickramaarachchige J.; Dhoubhadel, Mangal S.; Reinert, Tilo; McDaniel, Floyd D.; Rout, Bibhudutta

    2015-12-01

    The compositional phases of ion beam synthesized Fe-Si structures at two high fluences (0.50 × 1017 atoms/cm2 and 2.16 × 1017 atoms/cm2) were analyzed using X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The distribution of Fe implanted in Si was simulated using a dynamic simulation code (TRIDYN) incorporating target sputtering effects. The Fe depth profiles in the Si matrix were confirmed with Rutherford backscattering spectrometry (RBS) and XPS depth profiling using Ar-ion etching. Based on XPS binding energy shift and spectral asymmetry, the distribution of stable Fe-Si phases in the substrate was analyzed as a function of depth. Results indicate Fe implantation with a fluence of 0.50 × 1017 atoms/cm2 and subsequent thermal annealing produce mainly the β-FeSi2 phase in the whole thickness of the implanted region. But for the samples with a higher fluence Fe implantation, multiple phases are formed. Significant amount of Fe3Si phase are found at depth intervals of 14 nm and 28 nm from the surface. Initially, as-implanted samples show amorphous Fe3Si formation and further thermal annealing at 500 °C for 60 min formed crystalline Fe3Si structures at the same depth intervals. In addition, thermal annealing at 800 °C for 60 min restructures the Fe3Si clusters to form FeSi2 and FeSi phases.

  5. Method for ion implantation induced embedded particle formation via reduction

    DOEpatents

    Hampikian, Janet M; Hunt, Eden M

    2001-01-01

    A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.

  6. Ion implantations of oxide dispersion strengthened steels

    NASA Astrophysics Data System (ADS)

    Sojak, S.; Simeg Veternikova, J.; Slugen, V.; Petriska, M.; Stacho, M.

    2015-12-01

    This paper is focused on a study of radiation damage and thermal stability of high chromium oxide dispersion strengthened steel MA 956 (20% Cr), which belongs to the most perspective structural materials for the newest generation of nuclear reactors - Generation IV. The radiation damage was simulated by the implantation of hydrogen ions up to the depth of about 5 μm, which was performed at a linear accelerator owned by Slovak University of Technology. The ODS steel MA 956 was available for study in as-received state after different thermal treatments as well as in ions implanted state. Energy of the hydrogen ions chosen for the implantation was 800 keV and the implantation fluence of 6.24 × 1017 ions/cm2. The investigated specimens were measured by non-destructive technique Positron Annihilation Lifetime Spectroscopy in order to study the defect behavior after different thermal treatments in the as-received state and after the hydrogen ions implantation. Although, different resistance to defect production was observed in individual specimens of MA 956 during the irradiation, all implanted specimens contain larger defects than the ones in as-received state.

  7. Mechanical properties improvement of pulsed laser-deposited hydroxyapatite thin films by high energy ion-beam implantation

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Pelletier, H.; Müller, D.; Broll, N.; Mille, P.; Ristoscu, C.; Mihailescu, I. N.

    2002-01-01

    Major problems in the hydroxyapatite (HA), Ca 5(PO 4) 3OH, thin films processing still keep the poor mechanical properties and the lack in density. We present a study on the feasibility of high energy ion-beam implantation technique to densify HA bioceramic films. Crystalline HA films were grown by pulsed laser deposition (PLD) method using an excimer KrF ∗ laser ( λ=248 nm, τ FWHM≥20 ns). The films were deposited on Ti-5Al-2.5Fe alloys substrates previously coated with a ceramic TiN buffer layer. After deposition the films were implanted with Ar + ions at high energy. Optical microscopy (OM), white light confocal microscopy (WLCM), grazing incidence X-ray diffraction (GIXRD) and Berkovich nanoindentation in normal and scratch options have been applied for the characterization of the obtained structures. We put into evidence an enhancement of the mechanical characteristics after implantation, while GIXRD measurements confirm that the crystalline structure of HA phase is preserved. The improvement in mechanical properties is an effect of a densification after ion treatment as a result of pores elimination and grains regrowth.

  8. Mutation breeding by ion implantation

    NASA Astrophysics Data System (ADS)

    Yu, Zengliang; Deng, Jianguo; He, Jianjun; Huo, Yuping; Wu, Yuejin; Wang, Xuedong; Lui, Guifu

    1991-07-01

    Ion implantation as a new mutagenic method has been used in the rice breeding program since 1986, and for mutation breeding of other crops later. It has been shown, in principle and in practice, that this method has many outstanding advantages: lower damage rate; higher mutation rate and wider mutational spectrum. Many new lines of rice with higher yield rate; broader disease resistance; shorter growing period but higher quality have been bred from ion beam induced mutants. Some of these lines have been utilized for the intersubspecies hybridization. Several new lines of cotton, wheat and other crops are now in breeding. Some biophysical effects of ion implantation for crop seeds have been studied.

  9. Study of the amorphization of surface silicon layers implanted by low-energy helium ions

    NASA Astrophysics Data System (ADS)

    Lomov, A. A.; Myakon'kikh, A. V.; Oreshko, A. P.; Shemukhin, A. A.

    2016-03-01

    The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2-5)-keV helium ions to a dose of D = 6 × 1015-5 × 1017 cm-2 have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ( z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 1016 cm-2 leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

  10. Ion implanted dielectric elastomer circuits

    NASA Astrophysics Data System (ADS)

    O'Brien, Benjamin M.; Rosset, Samuel; Anderson, Iain A.; Shea, Herbert R.

    2013-06-01

    Starfish and octopuses control their infinite degree-of-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielectric Elastomer Switches (DES) that can be combined with artificial muscles to create arbitrary digital logic circuits. Unfortunately there are currently no reliable materials or fabrication process. Thus devices typically fail within a few thousand cycles. As a first step in the search for better materials we present a preliminary exploration of piezo-resistors made with filtered cathodic vacuum arc metal ion implantation. DES were formed on polydimethylsiloxane silicone membranes out of ion implanted gold nano-clusters. We propose that there are four distinct regimes (high dose, above percolation, on percolation, low dose) in which gold ion implanted piezo-resistors can operate and present experimental results on implanted piezo-resistors switching high voltages as well as a simple artificial muscle inverter. While gold ion implanted DES are limited by high hysteresis and low sensitivity, they already show promise for a range of applications including hysteretic oscillators and soft generators. With improvements to implanter process control the promise of artificial muscle circuitry for soft smart actuator networks could become a reality.

  11. High-energy metal ion implantation for reduction of surface resistivity of alumina ceramica)

    NASA Astrophysics Data System (ADS)

    Gushenets, V. I.; Nikolaev, A. G.; Oks, E. M.; Savkin, K. P.; Yushkov, G. Yu.; Brown, I. G.

    2012-02-01

    In this work, the possibility to increase the surface conductivity of ceramic insulators through their treatment with accelerated metal ion beams produced by a MevvaV.Ru vacuum arc source is demonstrated. The increase in surface conductivity is made possible due to experimental conditions in which an insulated collector is charged by beam ions to a potential many times lower than the accelerating voltage, and hence, than the average beam ion energy. The observed effect of charge neutralization of the accelerated ion beam is presumably associated with electrons knocked out of the electrodes of the accelerating system of the source and of the walls of the vacuum chamber by the accelerated ions.

  12. Ion implantation and laser annealing

    NASA Astrophysics Data System (ADS)

    Three ion implantation and laser annealing projects have been performed by ORNL through the DOE sponsored Seed Money Program. The research has contributed toward improving the characteristics of wear, hardness, and corrosion resistance of some metals and ceramics, as well as the electrical properties of semiconductors. The work has helped to spawn related research, at ORNL and elsewhere, concerning the relationships between microstructure and materials properties. ORNL research has resulted in major advances in extended life and non-corrosive artificial joints (hip and knee), high performance semiconductors, failure resistant ceramics (with potential energy applications), and solar cells. The success of the seed money projects was instrumental in the formation of ORNL's Surface Modification and Characterization Facility (SMAC). More than 60 universities and companies have participated in SMAC programs.

  13. Size saturation in low energy ion beam synthesized nanoparticles in silica glass: 50 keV Ag{sup -} ions implantation, a case study

    SciTech Connect

    Kuiri, P. K.

    2010-09-15

    Fluence-dependent formation of Ag nanoparticles (NPs) in silica glass by 50 keV Ag{sup -} ions implantation has been studied. Samples implanted with fluences of 2x10{sup 16} ions cm{sup -2} and above are found to show an absorption band at around 410 nm, corresponding to the surface plasmon resonance (SPR) of the Ag NPs in silica glass. An increase in SPR peak intensity with increase in fluence has been observed up to a fluence of 7x10{sup 16} ions cm{sup -2} (F7), after which the absorption intensity shows a saturation. Simulations of the optical absorption spectra also indicated an increase in the absorption intensity and hence the size of the NPs with increase in fluence up to F7, beyond which NP size is seen to saturate. The saturation of fluence and the SPR intensity (or NP size) have been explained as coming due to a break up of larger Ag NPs formed near the surface by displacement spikes induced by subsequently incident Ag ions against their regrowth from the movement of Ag atoms toward the surface and their sputtering loss. Further, we have compared our observations with the earlier data on saturation of fluence and size of NPs in cases of Au and Zn, and concluded that the saturation of both fluence and NP size are general phenomena for low energy high fluence metal ion implantation.

  14. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NASA Astrophysics Data System (ADS)

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; Louis, E.; Bijkerk, F.

    2010-03-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 keV CHx+ ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5-1 nm, buried SiC layer being formed. We investigated the effect of thermal annealing on further completion of the carbide layer. For the annealing we used a vacuum furnace, a rapid thermal annealing system in argon atmosphere, and a scanning e-beam, for different temperatures, heating rates, and annealing durations. Annealing to a temperature as low as 600 °C resulted in the formation of a 4.5 nm smooth, amorphous carbide layer in the carbon-implanted region. However, annealing at a higher temperature, 1000 °C, lead to the formation of a rough poly-crystalline carbide layer. The multilayers were characterized by grazing incidence X-ray reflectometry and cross section TEM.

  15. Plasma immersion ion implantation for silicon processing

    NASA Astrophysics Data System (ADS)

    Yankov, Rossen A.; Mändl, Stephan

    2001-04-01

    Plasma Immersion Ion Implantation (PIII) is a technology which is currently widely investigated as an alternative to conventional beam line implantation for ultrashallow doping beyond the 0.15 m technology. However, there are several other application areas in modern semiconductor processing. In this paper a detailed discussion of the PIII process for semiconductors and of actual as well as future applications is given. Besides the well known advantages of PIII - fast process, implantation of the whole surface, low cost of ownership - several peculiarities - like spread of the implantation energy due to finite rise time or collisions, no mass separation, high secondary electron emission - must be mentioned. However, they can be overcome by adjusting the system and the process parameters. Considering the applications, ultrashallow junction formation by PIII is an established industrial process, whereas SIMOX and Smart-Cut by oxygen and hydrogen implantation are current topics between research and introduction into industry. Further applications of PIII, of which some already are research topics and some are only investigated by conventional ion implantation, include seeding for metal deposition, gettering of metal impurities, etch stop layers and helium implantation for localized lifetime control.

  16. Energy-filtered plasmon images of MgAl{sub 2}O{sub 4} implanted with Al{sup +} and Mg{sup +} ions

    SciTech Connect

    Evans, N.D.; Bentley, J.; Zinkle, S.J.

    1995-06-01

    Magnesium aluminate spinel (MgAl{sub 2}O{sub 4}) is a candidate material for specialized applications in proposed fusion reactors, and previously, has been irradiated with Al{sup +} or Mg{sup +} ions to assess the effects of high-dose irradiation. Electron energy-loss spectrometry (EELS) has been used to confirm the identity of metallic aluminum colloids located in the ion-implanted region of the spinel because electron diffraction experiments were inconclusive for phase identification. In the present study, energy-filtered plasmon images of the ion-implanted region have been obtained to reveal this colloid distribution.

  17. Contamination Control in Ion Implantation

    SciTech Connect

    Eddy, R.; Doi, D.; Santos, I.; Wriggins, W.

    2011-01-07

    The investigation and elimination or control of metallic contamination in ion implanters has been a leading, continuous effort at implanter OEMs and in fabs/IDMs alike. Much of the efforts have been in the area of control of sputtering through material and geometry changes in apertures, beamline and target chamber components. In this paper, we will focus on an area that has not, heretofore, been fully investigated or controlled. This is the area of lubricants and internal and external support material such as selected cleaning media. Some of these materials are designated for internal use (beamline/vacuum) only while others are for internal and/or external use. Many applications for selected greases, for example, are designated for or are used for platens, implant disks/wheels and for wafer handling components. We will present data from popular lubricants (to be unnamed) used worldwide in ion implanters. This paper will review elements of concern in many lubricants that should be tracked and monitored by all fabs.Proper understanding of the characteristics, risks and the control of these potential contaminants can provide for rapid return to full process capability following major PMs or parts changes. Using VPD-ICPMS, Glow Discharge Mass Spectrometry and Ion Chromatography (IC) data, we will review the typical cleaning results and correlation to ''on wafer'' contamination by elements of concern--and by some elements that are otherwise barred from the fab.

  18. Mechanical stresses and amorphization of ion-implanted diamond

    NASA Astrophysics Data System (ADS)

    Khmelnitsky, R. A.; Dravin, V. A.; Tal, A. A.; Latushko, M. I.; Khomich, A. A.; Khomich, A. V.; Trushin, A. S.; Alekseev, A. A.; Terentiev, S. A.

    2013-06-01

    Scanning white light interferometry and Raman spectroscopy were used to investigate the mechanical stresses and structural changes in ion-implanted natural diamonds with different impurity content. The uniform distribution of radiation defects in implanted area was obtained by the regime of multiple-energy implantation of keV He+ ions. A modification of Bosia's et al. (Nucl. Instrum. Meth. B 268 (2010) 2991) method for determining the internal stresses and the density variation in an ion-implanted diamond layer was proposed that suggests measuring, in addition to the surface swelling of a diamond plate, the radius of curvature of the plate. It is shown that, under multiple-energy implantation of He+, mechanical stresses in the implanted layer may be as high as 12 GPa. It is shown that radiation damage reaches saturation for the implantation fluence characteristic of amorphization of diamond but is appreciably lower than the graphitization threshold.

  19. Modeling of nanocluster formation by ion beam implantation

    SciTech Connect

    Li, Kun-Dar

    2011-08-15

    A theoretical model was developed to investigate the mechanism of the formation of nanoclusters via ion beam implantation. The evolution of nanoclusters, including the nucleation and growth process known as Ostwald ripening, was rebuilt using numerical simulations. The effects of implantation parameters such as the ion energy, ion fluence, and temperature on the morphology of implanted microstructures were also studied through integration with the Monte Carlo Transport of Ions in Matter code calculation for the distribution profiles of implanted ions. With an appropriate ion fluence, a labyrinth-like nanostructure with broad size distributions of nanoclusters formed along the ion implantation range. In a latter stage, a buried layer of implanted impurity developed. With decreasing ion energy, the model predicted the formation of precipitates on the surface. These simulation results were fully consistent with many experimental observations. With increased temperature, the characteristic length and size of nanostructures would increase due to the high mobility. This theoretical model provides an efficient numerical approach for fully understanding the mechanism of the formation of nanoclusters, allowing for the design of ion beam experiments to form specific nanostructures through ion-implantation technology.

  20. Electrocatalysis on ion-implanted electrodes

    SciTech Connect

    O'Grady, W E; Wolf, G K

    1981-01-01

    The oxidation of formic acid and methanol has been stuidied on electrodes prepared by ion implanting Pt in RuO/sup 2/. Formic acid was found to oxidize readily on this catalyst without poisoning the surface. In the case of methanol no reaction was found to take place. Using XPS techniques, Pt was shown to have a lower binding energy than bulk Pt. This suggests that there is excess charge on this form of Pt which changes its reactivity.

  1. Synthesis of Fe16N2 compound Free-Standing Foils with 20 MGOe Magnetic Energy Product by Nitrogen Ion-Implantation

    NASA Astrophysics Data System (ADS)

    Jiang, Yanfeng; Mehedi, Md Al; Fu, Engang; Wang, Yongqiang; Allard, Lawrence F.; Wang, Jian-Ping

    2016-05-01

    Rare-earth-free magnets are highly demanded by clean and renewable energy industries because of the supply constraints and environmental issues. A promising permanent magnet should possess high remanent magnetic flux density (Br), large coercivity (Hc) and hence large maximum magnetic energy product ((BH)max). Fe16N2 has been emerging as one of promising candidates because of the redundancy of Fe and N on the earth, its large magnetocrystalline anisotropy (Ku > 1.0 × 107 erg/cc), and large saturation magnetization (4πMs > 2.4 T). However, there is no report on the formation of Fe16N2 magnet with high Br and large Hc in bulk format before. In this paper, we successfully synthesize free-standing Fe16N2 foils with a coercivity of up to 1910 Oe and a magnetic energy product of up to 20 MGOe at room temperature. Nitrogen ion implantation is used as an alternative nitriding approach with the benefit of tunable implantation energy and fluence. An integrated synthesis technique is developed, including a direct foil-substrate bonding step, an ion implantation step and a two-step post-annealing process. With the tunable capability of the ion implantation fluence and energy, a microstructure with grain size 25–30 nm is constructed on the FeN foil sample with the implantation fluence of 5 × 1017/cm2.

  2. Mechanical properties of pulsed laser-deposited hydroxyapatite thin film implanted at high energy with N + and Ar + ions. Part I: nanoindentation with spherical tipped indenter

    NASA Astrophysics Data System (ADS)

    Pelletier, H.; Nelea, V.; Mille, P.; Muller, D.

    2004-02-01

    We report here a comparison between the effects of ion beam implantation treatment using nitrogen and argon ions, on the mechanical characteristics of HA films grown by pulsed laser deposition, using a KrF ∗ excimer laser. Crystalline and stoichiometric HA films were grown on Ti-5Al-2.5Fe alloy substrate, previously coated with a TiN buffer layer. After deposition, the film were implanted with ions of N + and Ar + of high energy (1-1.5 MeV range) and dose set at 10 16 at cm -2. From the load-displacement curves determined by nanoindentation tests using a spherical tipped nanoindenter ( R=5 μm), we put into evidence an enhancement of the mechanical characteristics (hardness and elastic modulus) of the HA films after implantation, especially for those implanted with N + ions. Moreover, using various applied normal loads (ranging from 1 to 100 mN) in different implanted areas, a good reproducibility of nitrogen implantation effect are observed.

  3. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source.

    PubMed

    Shin, Chang Seouk; Lee, Byoung-Seob; Choi, Seyong; Yoon, Jang-Hee; Kim, Hyun Gyu; Ok, Jung-Woo; Park, Jin Yong; Kim, Seong Jun; Bahng, Jungbae; Hong, Jonggi; Lee, Seung Wook; Won, Mi-Sook

    2016-02-01

    The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1-10 mm(2). The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research. PMID:26931931

  4. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

    NASA Astrophysics Data System (ADS)

    Shin, Chang Seouk; Lee, Byoung-Seob; Choi, Seyong; Yoon, Jang-Hee; Kim, Hyun Gyu; Ok, Jung-Woo; Park, Jin Yong; Kim, Seong Jun; Bahng, Jungbae; Hong, Jonggi; Lee, Seung Wook; Won, Mi-Sook

    2016-02-01

    The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1-10 mm2. The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.

  5. Production of Endohedral Fullerenes by Ion Implantation

    SciTech Connect

    Diener, M.D.; Alford, J. M.; Mirzadeh, S.

    2007-05-31

    The empty interior cavity of fullerenes has long been touted for containment of radionuclides during in vivo transport, during radioimmunotherapy (RIT) and radioimaging for example. As the chemistry required to open a hole in fullerene is complex and exceedingly unlikely to occur in vivo, and conformational stability of the fullerene cage is absolute, atoms trapped within fullerenes can only be released during extremely energetic events. Encapsulating radionuclides in fullerenes could therefore potentially eliminate undesired toxicity resulting from leakage and catabolism of radionuclides administered with other techniques. At the start of this project however, methods for production of transition metal and p-electron metal endohedral fullerenes were completely unknown, and only one method for production of endohedral radiofullerenes was known. They therefore investigated three different methods for the production of therapeutically useful endohedral metallofullerenes: (1) implantation of ions using the high intensity ion beam at the Oak Ridge National Laboratory (ORNL) Surface Modification and Characterization Research Center (SMAC) and fullerenes as the target; (2) implantation of ions using the recoil energy following alpha decay; and (3) implantation of ions using the recoil energy following neutron capture, using ORNL's High Flux Isotope Reactor (HFIR) as a thermal neutron source. While they were unable to obtain evidence of successful implantation using the ion beam at SMAC, recoil following alpha decay and neutron capture were both found to be economically viable methods for the production of therapeutically useful radiofullerenes. In this report, the procedures for preparing fullerenes containing the isotopes {sup 212}Pb, {sup 212}Bi, {sup 213}Bi, and {sup 177}Lu are described. None of these endohedral fullerenes had ever previously been prepared, and all of these radioisotopes are actively under investigation for RIT. Additionally, the chemistry for

  6. In-situ deposition of sacrificial layers during ion implantation

    SciTech Connect

    Anders, A.; Anders, S.; Brown, I.G.; Yu, K.M.

    1995-02-01

    The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer deposited prior to ion implantation can lead to an enhanced retained dose. However, a higher ion energy is required to obtain a similar implantation depth due to the stopping of ions in the sacrificial layer. It is desirable to have a sacrificial layer of only a few monolayers thickness which can be renewed after it has been sputtered away. We explain the concept and describe two examples: (i) metal ion implantation using simultaneously a vacuum arc ion source and filtered vacuum arc plasma sources, and (ii) Metal Plasma Immersion Ion Implantation and Deposition (MePIIID). In MePIIID, the target is immersed in a metal or carbon plasma and a negative, repetitively pulsed bias voltage is applied. Ions are implanted when the bias is applied while the sacrificial layer suffers sputtering. Low-energy thin film deposition - repair of the sacrificial layer -- occurs between bias pulses. No foreign atoms are incorporated into the target since the sacrificial film is made of the same ion species as used in the implantation phase.

  7. Structural and compositional characterization of X-cut LiNbO 3 crystals implanted with high energy oxygen and carbon ions

    NASA Astrophysics Data System (ADS)

    Bentini, G. G.; Bianconi, M.; Cerutti, A.; Chiarini, M.; Pennestrì, G.; Sada, C.; Argiolas, N.; Bazzan, M.; Mazzoldi, P.; Guzzi, R.

    2005-10-01

    High energy implantation of medium-light elements such as oxygen and carbon was performed in X-cut LiNbO3 single crystals in order to prepare high quality optical waveguides. The compositional and damage profiles, obtained by exploiting the secondary ion mass spectrometry and Rutherford back-scattering techniques respectively, were correlated to the structural properties measured by the high resolution X-ray diffraction. This study evidences the development of tensile strain induced by the ion implantation that can contribute to the decrease of the ordinary refractive index variation through the photo-elastic effect.

  8. High-energy ion implantation of polymeric fibers for modification of reinforcement-matrix adhesion

    NASA Astrophysics Data System (ADS)

    Grummon, D. S.; Schalek, R.; Ozzello, A.; Kalantar, J.; Drzal, L. T.

    1991-07-01

    We have previously reported on the effect of high-energy ion irradiation of ultrahigh molecular weight polyethylene (UHMW-PE), and Kevlar-49 polyaramid fibers, on fiber-matrix adhesion and interfacial shear strength (ISS) in epoxy matrix composites. Irradiation of UHMW-PE fibers produced large improvements in interfacial shear strength, without degrading fiber tensile strength. ISS was not generally affected in irradiated Kevlar-49, and fiber tensile strength decreased. The divergence in response between polyaramid and polyethylene relates both to differences in the mesoscopic structure of the individual fibers, and to the different forms of beam induced structural modification favored by the individual polymer chemistries. Here we report results of surface energy measurements, infrared spectroscopy analysis, and X-ray photoelectron spectroscopy studies on UHMW-PE and polyaramid fibers, irradiated to fluences between 2 × 10 12 and 5 × 10 15 cm -2 with N +, Ar +, Ti +, Na +, and He + at energies between 30 and 400 keV. UHMW-PE fibers showed a pronounced increase in the polar component of surface energy which could be associated with carbonyl, hydroxyl and hydroperoxide groups at the surface. Kevlar, on the other hand, tended toward carbonization and showed a decrease in nitrogen and oxygen concentrations and a sharp drop in polar surface energy.

  9. Ion Implantation into Presolar Grains: A Theoretical Model

    NASA Astrophysics Data System (ADS)

    Verchovsky, A. B.; Wright, I. P.; Pillinger, C. T.

    A numerical model for ion implantation into spherical grains in free space has been developed. It can be applied to single grains or collections of grains with known grain-size distributions. Ion-scattering effects were taken into account using results of computer simulations. Possible isotope and element fractionation of the implanted species was investigated using this model. The astrophysical significance of the model lies in the possible identification of energetically different components (such as noble gases) implanted into presolar grains (such as diamond and SiC) and in establishing implantation energies of the components.

  10. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    DOEpatents

    Peercy, P.S.; Land, C.E.

    1980-06-13

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/. The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image. The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%. The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate. Density of ions is in the range from 1 x 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV.

  11. Silicon on sapphire for ion implantation studies

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.

    1974-01-01

    Van der Pauw or bridge samples are ultrasonically cut from silicon on sapphire wafers. Contact pad regions are implanted with moderately heavy dose of ions. Ion of interest is implanted into sample; and, before being annealed in vacuum, sample is sealed with sputtered layer of silicon dioxide. Nickel or aluminum is sputtered onto contact pad areas and is sintered in nitrogen atmosphere.

  12. Pulsed source ion implantation apparatus and method

    DOEpatents

    Leung, K.N.

    1996-09-24

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

  13. Pulsed source ion implantation apparatus and method

    DOEpatents

    Leung, Ka-Ngo

    1996-01-01

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

  14. Surface modification of sapphire by ion implantation

    SciTech Connect

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  15. A decaborane ion source for high current implantation

    NASA Astrophysics Data System (ADS)

    Perel, Alex S.; Loizides, William K.; Reynolds, William E.

    2002-02-01

    Progressive semiconductor device scaling in each technology node requires the formation of shallower junctions, and thus lower energy implants. The difficulties associated with extraction and transport of low energy beams often result in a loss in wafer throughput. Implantation of boron using the molecular compound decaborane has been found to allow for the shallow implantation of boron without a significant design change in the implanter. The decaborane molecule has 10 boron atoms and 14 hydrogen atoms. The implanted dose is ten times the electrical dose and the implanted depth is equivalent to the depth of a boron beam at 1/11th of the extraction energy. This advantage can only be exploited with an ion source that does not destroy the fragile molecule. We report on the design of an ion source capable of ionizing decaborane without significant fragmentation of the molecule. After it was shown that the decaborane molecule fragments above 350 °C an ion source was designed to prevent thermal dissociation of the molecule. Competitive boron dose rates were achieved using this source in a commercial high current implanter. In addition, evidence is shown that a decaborane dimer is formed in the ion source and can be implanted.

  16. Ion implantation induced nanotopography on titanium and bone cell adhesion

    NASA Astrophysics Data System (ADS)

    Braceras, Iñigo; Vera, Carolina; Ayerdi-Izquierdo, Ana; Muñoz, Roberto; Lorenzo, Jaione; Alvarez, Noelia; de Maeztu, Miguel Ángel

    2014-08-01

    Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40-80 keV), fluence (1-2 e17 ion/cm2) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted surfaces, without surface chemistry modification, are in the same range and that such modifications, in certain conditions, do have a statistically significant effect on bone tissue forming cell adhesion.

  17. Amorphization and defect recombination in ion implanted silicon carbide

    SciTech Connect

    Grimaldi, M.G.; Calcagno, L.; Musumeci, P.; Frangis, N.; Van Landuyt, J.

    1997-06-01

    The damage produced in silicon carbide single crystals by ion implantation was investigated by Rutherford backscattering channeling and transmission electron microscopy techniques. Implantations were performed at liquid nitrogen and at room temperatures with several ions to examine the effect of the ion mass and of the substrate temperature on the damaging process. The damage accumulation is approximately linear with fluence until amorphization occurs when the elastic energy density deposited by the ions overcomes a critical value. The critical energy density for amorphization depends on the substrate temperature and is greatest at 300 K indicating that defects recombination occurs already at room temperature. Formation of extended defects never occurred and point defects and uncollapsed clusters of point defects were found before amorphization even in the case of light ion implantation. The atomic displacement energy has been estimated to be {approximately}12 eV/atom from the analysis of the damage process in dilute collision cascades. {copyright} {ital 1997 American Institute of Physics.}

  18. Microstructure evolution in carbon-ion implanted sapphire

    SciTech Connect

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-15

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10{sup 17} or 2x10{sup 17} cm{sup -2} and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L{sub 1}) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L{sub 2}) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L{sub 3}) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  19. Bacterial adhesion on ion-implanted stainless steel surfaces

    NASA Astrophysics Data System (ADS)

    Zhao, Q.; Liu, Y.; Wang, C.; Wang, S.; Peng, N.; Jeynes, C.

    2007-08-01

    Stainless steel disks were implanted with N +, O + and SiF 3+, respectively at the Surrey Ion Beam Centre. The surface properties of the implanted surfaces were analyzed, including surface chemical composition, surface topography, surface roughness and surface free energy. Bacterial adhesion of Pseudomonas aeruginosa, Staphylococcus epidermidis and Staphylococcus aureus, which frequently cause medical device-associated infections was evaluated under static condition and laminar flow condition. The effect of contact time, growth media and surface properties of the ion-implanted steels on bacterial adhesion was investigated. The experimental results showed that SiF 3+-implanted stainless steel performed much better than N +-implanted steel, O +-implanted steel and untreated stainless steel control on reducing bacterial attachment under identical experimental conditions.

  20. Method of fabricating optical waveguides by ion implantation doping

    DOEpatents

    Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

    1989-01-01

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

  1. Method of fabricating optical waveguides by ion implantation doping

    DOEpatents

    Appleton, B.R.; Ashley, P.R.; Buchal, C.J.

    1987-03-24

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

  2. Modification of medical metals by ion implantation of copper

    NASA Astrophysics Data System (ADS)

    Wan, Y. Z.; Xiong, G. Y.; Liang, H.; Raman, S.; He, F.; Huang, Y.

    2007-10-01

    The effect of copper ion implantation on the antibacterial activity, wear performance and corrosion resistance of medical metals including 317 L of stainless steels, pure titanium, and Ti-Al-Nb alloy was studied in this work. The specimens were implanted with copper ions using a MEVVA source ion implanter with ion doses ranging from 0.5 × 10 17 to 4 × 10 17 ions/cm 2 at an energy of 80 keV. The antibacterial effect, wear rate, and inflexion potential were measured as a function of ion dose. The results obtained indicate that copper ion implantation improves the antibacterial effect and wear behaviour for all the three medical materials studied. However, corrosion resistance decreases after ion implantation of copper. Experimental results indicate that the antibacterial property and corrosion resistance should be balanced for medical titanium materials. The marked deteriorated corrosion resistance of 317 L suggests that copper implantation may not be an effective method of improving its antibacterial activity.

  3. Ion implantation effects in 'cosmic' dust grains

    NASA Technical Reports Server (NTRS)

    Bibring, J. P.; Langevin, Y.; Maurette, M.; Meunier, R.; Jouffrey, B.; Jouret, C.

    1974-01-01

    Cosmic dust grains, whatever their origin may be, have probably suffered a complex sequence of events including exposure to high doses of low-energy nuclear particles and cycles of turbulent motions. High-voltage electron microscope observations of micron-sized grains either naturally exposed to space environmental parameters on the lunar surface or artificially subjected to space simulated conditions strongly suggest that such events could drastically modify the mineralogical composition of the grains and considerably ease their aggregation during collisions at low speeds. Furthermore, combined mass spectrometer and ionic analyzer studies show that small carbon compounds can be both synthesized during the implantation of a mixture of low-energy D, C, N ions in various solids and released in space by ion sputtering.

  4. Synthesis of Fe16N2 compound Free-Standing Foils with 20 MGOe Magnetic Energy Product by Nitrogen Ion-Implantation.

    PubMed

    Jiang, Yanfeng; Mehedi, Md Al; Fu, Engang; Wang, Yongqiang; Allard, Lawrence F; Wang, Jian-Ping

    2016-01-01

    Rare-earth-free magnets are highly demanded by clean and renewable energy industries because of the supply constraints and environmental issues. A promising permanent magnet should possess high remanent magnetic flux density (Br), large coercivity (Hc) and hence large maximum magnetic energy product ((BH)max). Fe16N2 has been emerging as one of promising candidates because of the redundancy of Fe and N on the earth, its large magnetocrystalline anisotropy (Ku > 1.0 × 10(7) erg/cc), and large saturation magnetization (4πMs > 2.4 T). However, there is no report on the formation of Fe16N2 magnet with high Br and large Hc in bulk format before. In this paper, we successfully synthesize free-standing Fe16N2 foils with a coercivity of up to 1910 Oe and a magnetic energy product of up to 20 MGOe at room temperature. Nitrogen ion implantation is used as an alternative nitriding approach with the benefit of tunable implantation energy and fluence. An integrated synthesis technique is developed, including a direct foil-substrate bonding step, an ion implantation step and a two-step post-annealing process. With the tunable capability of the ion implantation fluence and energy, a microstructure with grain size 25-30 nm is constructed on the FeN foil sample with the implantation fluence of 5 × 10(17)/cm(2). PMID:27145983

  5. Synthesis of Fe16N2 compound Free-Standing Foils with 20 MGOe Magnetic Energy Product by Nitrogen Ion-Implantation

    PubMed Central

    Jiang, Yanfeng; Mehedi, Md Al; Fu, Engang; Wang, Yongqiang; Allard, Lawrence F.; Wang, Jian-Ping

    2016-01-01

    Rare-earth-free magnets are highly demanded by clean and renewable energy industries because of the supply constraints and environmental issues. A promising permanent magnet should possess high remanent magnetic flux density (Br), large coercivity (Hc) and hence large maximum magnetic energy product ((BH)max). Fe16N2 has been emerging as one of promising candidates because of the redundancy of Fe and N on the earth, its large magnetocrystalline anisotropy (Ku > 1.0 × 107 erg/cc), and large saturation magnetization (4πMs > 2.4 T). However, there is no report on the formation of Fe16N2 magnet with high Br and large Hc in bulk format before. In this paper, we successfully synthesize free-standing Fe16N2 foils with a coercivity of up to 1910 Oe and a magnetic energy product of up to 20 MGOe at room temperature. Nitrogen ion implantation is used as an alternative nitriding approach with the benefit of tunable implantation energy and fluence. An integrated synthesis technique is developed, including a direct foil-substrate bonding step, an ion implantation step and a two-step post-annealing process. With the tunable capability of the ion implantation fluence and energy, a microstructure with grain size 25–30 nm is constructed on the FeN foil sample with the implantation fluence of 5 × 1017/cm2. PMID:27145983

  6. Caborane beam from ITEP Bernas ion source for semiconductor implanters

    SciTech Connect

    Seleznev, D.; Hershcovitch, A.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Koshelev, V.; Kulevoy, T.; Jonson, B.; Poole, J.; Alexeyenko, O.; Gurkova, E.; Oks, E.; Gushenets, V.; Polozov, S.; Masunov, E.

    2010-02-01

    A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C{sub 2}B{sub 10}H{sub 12}) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.

  7. Ion implantation into concave polymer surface

    NASA Astrophysics Data System (ADS)

    Sakudo, N.; Shinohara, T.; Amaya, S.; Endo, H.; Okuji, S.; Ikenaga, N.

    2006-01-01

    A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows that gas-barrier property enhances due to the modification.

  8. Nanocrystal formation via yttrium ion implantation into sapphire

    SciTech Connect

    Hunt, E.M.; Hampikian, J.M.; Poker, D.B.

    1995-12-31

    Ion implantation has been used to form nanocrystals in the near surface of single crystal {alpha}-Al{sub 2}O{sub 3}. The ion fluence was 5 x 10{sup 16} Y{sup +}/cm{sup 2}, and the implant energies investigated were 100, 150, and 170 keV. The morphology of the implanted region was investigated using transmission electron microscopy, x-ray energy dispersive spectroscopy, Rutherford backscattering spectroscopy and ion channeling. The implantation causes the formation of an amorphous surface layer which contains spherical nanosized crystals with a diameter of {approximately}13 nm. The nanocrystals are randomly oriented and exhibit a face-centered cubic structure with a lattice parameter of {approximately}4.1 A {+-} .02 A. Preliminary chemical analysis shows that these nanocrystals are rich in aluminum and yttrium and poor in oxygen relative to the amorphous matrix.

  9. Ion Implantation with Scanning Probe Alignment

    SciTech Connect

    Persaud, A.; Liddle, J.A.; Schenkel, T.; Bokor, J.; Ivanov, Tzv.; Rangelow, I.W.

    2005-07-12

    We describe a scanning probe instrument which integrates ion beams with the imaging and alignment function of a piezo-resistive scanning probe in high vacuum. The beam passes through several apertures and is finally collimated by a hole in the cantilever of the scanning probe. The ion beam spot size is limited by the size of the last aperture. Highly charged ions are used to show hits of single ions in resist, and we discuss the issues for implantation of single ions.

  10. Metal plasma immersion ion implantation and deposition: A review

    SciTech Connect

    Anders, A.

    1996-09-01

    Metal Plasma Immersion Ion Implantation and Deposition (MePIIID) is a hybrid process combining cathodic arc deposition and plasma immersion ion implantation. The properties of metal plasma produced by vacuum arcs are reviewed and the consequences for MePIIID are discussed. Different version of MePIIID are described and compared with traditional methods of surface modification such as ion beam assisted deposition (IBAD). MePIIID is a very versatile approach because of the wide range of ion species and energies used. In one extreme case, films are deposited with ions in the energy range 20--50 eV, and at the other extreme, ions can be implanted with high energy (100 keV or more) without film deposition. Novel features of the technique include the use of improved macroparticle filters; the implementation of several plasma sources for multi-element surface modification; tuning of ion energy during implantation and deposition to tailor the substrate-film intermixed layer and structure of the growing film; simultaneous pulsing of the plasma potential (positive) and substrate bias (negative) with a modified Marx generator; and the use of high ion charge states.

  11. Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

    DOE PAGESBeta

    Abraham, John Bishoy Sam; Pacheco, Jose L.; Aguirre, Brandon Adrian; Vizkelethy, Gyorgy; Bielejec, Edward S.

    2016-05-01

    We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantationmore » process.« less

  12. Depth profile reconstructions of electronic transport properties in H{sup +} MeV-energy ion-implanted n-Si wafers using photocarrier radiometry

    SciTech Connect

    Tai, Rui; Wang, Chinhua Hu, Jingpei; Mandelis, Andreas

    2014-07-21

    A depth profiling technique using photocarrier radiometry (PCR) is demonstrated and used for the reconstruction of continuously varying electronic transport properties (carrier lifetime and electronic diffusivity) in the interim region between the ion residence layer and the bulk crystalline layer in H{sup +} implanted semiconductor wafers with high implantation energies (∼MeV). This defect-rich region, which is normally assumed to be part of the homogeneous “substrate” in all existing two- and three-layer models, was sliced into many virtual thin layers along the depth direction so that the continuously and monotonically variable electronic properties across its thickness can be considered uniform within each virtual layer. The depth profile reconstruction of both carrier life time and diffusivity in H{sup +} implanted wafers with several implantation doses (3 × 10{sup 14}, 3 × 10{sup 15}, and 3 × 10{sup 16} cm{sup −2}) and different implantation energies (from 0.75 to 2.0 MeV) is presented. This all-optical PCR method provides a fast non-destructive way of characterizing sub-surface process-induced electronic defect profiles in devices under fabrication at any intermediate stage before final metallization and possibly lead to process correction and optimization well before electrical testing and defect diagnosis becomes possible.

  13. Experiments and Theory of Ablation Plasma Ion Implantation

    NASA Astrophysics Data System (ADS)

    Gilgenbach, R. M.; Qi, B.; Lau, Y. Y.; Johnston, M. D.; Doll, G. L.; Lazarides, A.

    2000-10-01

    Research is underway to accelerate laser ablation plume ions for implantation into substrates. Ablation plasma ion implantation (APII) biases the deposition substrate to a large negative voltage. APII has the advantages of direct acceleration and implantation of ions from metals or any other solid targets. This process is environmentally friendly because it avoids the use of toxic gaseous precursors. Initial experiments are directed towards the implantation of iron ions into silicon substrates at negative voltages from 2-10 kV. A KrF laser ablates iron targets at pulse energies up to 600 mJ and typical repetition rates of 10 Hz. Parameters which can be varied include laser fluence, relative timing of laser and high voltage pulse, and target-to-substrate distance. Spectroscopic diagnostics yield Fe plasma plume electron temperatures up to about 10 eV. Analysis of films will compare surface morphology, hardness and adhesion between deposited Vs accelerated-implanted plumes. A simple one dimensional theory is developed [1] to calculate the implanted ion current, extracted from the ion matrix sheath, as a function of time for various substrate-plume separations. This model accurately recovers Lieberman's classic results when the plume front is initially in contact with the substrate. [1] B. Qi, Y. Y. Lau, and R. M. Gilgenbach, Appl. Phys. Lett. (to be published). * This research is supported by the National Science Foundation.

  14. SEM analysis of ion implanted SiC

    NASA Astrophysics Data System (ADS)

    Malherbe, Johan B.; van der Berg, N. G.; Botha, A. J.; Friedland, E.; Hlatshwayo, T. T.; Kuhudzai, R. J.; Wendler, E.; Wesch, W.; Chakraborty, P.; da Silveira, E. F.

    2013-11-01

    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the fuel elements of the next generation of nuclear power plants. For both applications, there is an interest in the implantation of reactive and non-reactive ions into SiC and their effects on the properties of the SiC. In this study 360 keV Ag+, I+ and Xe+ ions were separately implanted into 6H-SiC and in polycrystalline SiC at various substrate temperatures. The implanted samples were also annealed in vacuum at temperatures ranging from 900 °C to 1600 °C for various times. In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM. Cross-sectional SEM images of 6H-SiC wafers implanted with 360 keV Ag+ ions at room temperature and at 600 °C and then vacuum annealed at different temperatures revealed the implanted layers and their thicknesses. A similar result is shown of 360 keV I+ ions implanted at 600 °C into 6H-SiC and annealed at 1600 °C. The 6H-SiC is not amorphized but remained crystalline when implanting at 600 °C. There are differences in the microstructure of 6H-SiC implanted with silver at the two temperatures as well as with reactive iodine ions. Voids (bubbles) are created in the implanted layers into which the precipitation of silver and iodine can occur after annealing of the samples. The crystallinity of the substrate via implantation temperature caused differences in the distribution and size of the voids. Implantation of xenon ions in polycrystalline SiC at 350 °C does not amorphize the substrate as is the case with room temperature heavy ion bombardment. Subsequent

  15. Optimization of L(+)-Lactic Acid Production from Xylose with Rhizopus Oryzae Mutant RLC41-6 Breeding by Low-Energy Ion Implantation

    NASA Astrophysics Data System (ADS)

    Yang, Yingge; Fan, Yonghong; Li, Wen; Wang, Dongmei; Wu, Yuejin; Zheng, Zhiming; Yu, Zengliang

    2007-10-01

    In order to obtain an industrial strain with a higher L(+)-lactic acid yield, the strain Rhizopus oryzae PW352 was mutated by means of nitrogen ion beam implantation and the mutant strain Rhizopus oryzae RLC41-6 was obtained. An experimental finding was made in surprise that Rhizopus oryzae mutant RLC41-6 is not only an L(+)-lactic acid producer from corn starch but also an efficient producer of L(+)-lactic acid from xylose. Under optimal conditions, the production of L(+)-lactic acid from 100 g/L xylose reached 77.39 g/L after 144 h fed-batch fermentation. A high mutation rate and a wide mutation spectrum of low-energy ion implantation were observed in the experiment.

  16. Surface nanostructures on low energy Zn ion implanted crystalline Si and their thermal evolution at different atmospheres

    NASA Astrophysics Data System (ADS)

    Liu, Changlong; Zhao, Hang; Shen, Yanyan; Jia, Guangyi; Wang, Jun; Mu, Xiaoyu

    2014-05-01

    Cz n-type Si (1 0 0) wafers were implanted with 45 keV Zn ions at a fluence of 1.0 × 1017 ions/cm2. Formation of surface nanostructures, their structures and thermal evolution in different atmospheres have been studied. Our results clearly show that creation of surface nanostructures depends strongly on both annealing temperature and atmosphere. In nitrogen ambient, hemispherical nano-sized bumps could be effectively observed on the Zn-implanted Si surface after annealing at 600 °C, and their sizes increase with the annealing temperature up to 800 °C. However, in the oxygen ambient, hemispherical nano-sized bumps created at 600 °C could be transferred to winding patterns after 800 °C annealing. The results from X-ray photoelectron spectroscopy and grazing X-ray diffraction measurements reveal production of Zn NPs near the Si surface in as-implanted state. The thermal growth and transformation of such NPs during annealing contribute to formation and evolution of the observed surface nanostructures.

  17. Ion-implantation doping of silicon carbide

    SciTech Connect

    Gardner, J.; Edwards, A.; Rao, M.V.; Papanicolaou, N.; Kelner, G.; Holland, O.W.

    1997-10-01

    Because of their commercial availability in bulk single crystal form, the 6H- and 4H- polytypes of SiC are gaining importance for high-power, high-temperature, and high-frequency device applications. Selective area doping is a crucial processing step in integrated circuit manufacturing. In Si technology, selective area doping is accomplished by thermal diffusion or ion-implantation. Because of the low diffusion coefficients of most impurities in SiC, ion implantation is indispensable in SiC device manufacturing. In this paper the authors present their results on donor, acceptor, and compensation implants in 6H-SiC.

  18. Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

    SciTech Connect

    Feng, Kai; Wang, Yibo; Li, Zhuguo; Chu, Paul K.

    2015-08-15

    Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 10{sup 17} ions-cm{sup −} {sup 2}, 2.4 × 10{sup 17} ions-cm{sup −} {sup 2}, and 4.8 × 10{sup 17} ions-cm{sup −} {sup 2}. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enriched region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation.

  19. PLEPS study of ions implanted RAFM steels

    NASA Astrophysics Data System (ADS)

    Sojak, S.; Slugeň, V.; Egger, W.; Ravelli, L.; Petriska, M.; Veterníková, J.; Stacho, M.; Sabelová, V.

    2014-04-01

    Current nuclear power plants (NPP) require radiation, heat and mechanical resistance of their structural materials with the ability to stay operational during NPP planned lifetime. Radiation damage much higher, than in the current NPP, is expected in new generations of nuclear power plants, such as Generation IV and fusion reactors. Investigation of perspective structural materials for new generations of nuclear power plants is among others focused on study of reduced activation ferritic/martensitic (RAFM) steels. These steels have good characteristics as reduced activation, good resistance to volume swelling, good radiation, and heat resistance. Our experiments were focused on the study of microstructural changes of binary Fe-Cr alloys with different chromium content after irradiation, experimentally simulated by ion implantations. Fe-Cr alloys were examined, by Pulsed Low Energy Positron System (PLEPS) at FRM II reactor in Garching (Munich), after helium ion implantations at the dose of 0.1 C/cm2. The investigation was focused on the chromium effect and the radiation defects resistivity. In particular, the vacancy type defects (monovacancies, vacancy clusters) have been studied. Based on our previous results achieved by conventional lifetime technique, the decrease of the defects size with increasing content of chromium is expected also for PLEPS measurements.

  20. Physical and Tribological Characteristics of Ion-Implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Heidger, S.; Korenyi-Both, A. L.; Jayne, D. T.; Herrera-Fierro, P.; Shogrin, B.; Wilbur, P. J.; Wu, R. L. C.; Garscadden, A.; Barnes, P. N.

    1994-01-01

    Unidirectional sliding friction experiments were conducted with a natural, polished diamond pin in contact with both as-deposited and carbon-ion-implanted diamond films in ultrahigh vacuum. Diamond films were deposited on silicon, silicon carbide, and silicon nitride by microwave-plasma-assisted chemical vapor deposition. The as-deposited diamond films were impacted with carbon ions at an accelerating energy of 60 keV and a current density of 50 micron A/cm(exp 2) for approximately 6 min, resulting in a dose of 1.2 x 10(exp 17) carbon ions/cm(exp 2). The results indicate that the carbon ion implantation produced a thin surface layer of amorphous, nondiamond carbon. The nondiamond carbon greatly decreased both friction and wear of the diamond films. The coefficients of friction for the carbon-ion-implanted, fine-grain diamond films were less than 0.1, factors of 20 to 30 lower than those for the as-deposited, fine-grain diamond films. The coefficients of friction for the carbon-ion-implanted, coarse-grain diamond films were approximately 0.35, a factor of five lower than those for the as-deposited, coarse-grain diamond films. The wear rates for the carbon-ion-implanted, diamond films were on the order of 10(exp -6) mm(exp 3)/Nm, factors of 30 to 80 lower than that for the as-deposited diamond films, regardless of grain size. The friction of the carbon-ion-implanted diamond films was greatly reduced because the amorphous, nondiamond carbon, which had a low shear strength, was restricted to the surface layers (less than 0.1 micron thick) and because the underlying diamond materials retained their high hardness. In conclusion, the carbon-ion-implanted, fine-grain diamond films can be used effectively as wear resistant, self-lubricating coatings for ceramics, such as silicon nitride and silicon carbide, in ultrahigh vacuum.

  1. Key issues in plasma source ion implantation

    SciTech Connect

    Rej, D.J.; Faehl, R.J.; Matossian, J.N.

    1996-09-01

    Plasma source ion implantation (PSII) is a scaleable, non-line-of-sight method for the surface modification of materials. In this paper, we consider three important issues that should be addressed before wide-scale commercialization of PSII: (1) implant conformality; (2) ion sources; and (3) secondary electron emission. To insure uniform implanted dose over complex shapes, the ion sheath thickness must be kept sufficiently small. This criterion places demands on ion sources and pulsed-power supplies. Another limitation to date is the availability of additional ion species beyond B, C, N, and 0. Possible solutions are the use of metal arc vaporization sources and plasma discharges in high-vapor-pressure organometallic precursors. Finally, secondary electron emission presents a potential efficiency and x-ray hazard issue since for many metallurgic applications, the emission coefficient can be as large as 20. Techniques to suppress secondary electron emission are discussed.

  2. Retention of ion-implanted-xenon in olivine: Dependence on implantation dose

    NASA Technical Reports Server (NTRS)

    Melcher, C. L.; Tombrello, T. A.; Burnett, D. S.

    1982-01-01

    The diffusion of Xe in olivine, a major mineral in both meteorites and lunar samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted Xe retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100% occurred for an implantion dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with (approximately more than or = 50% loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature.

  3. Improving Alpha Spectrometry Energy Resolution by Ion Implantation with ICP-MS

    SciTech Connect

    Dion, Michael P.; Liezers, Martin; Farmer, Orville T.; Miller, Brian W.; Morley, Shannon M.; Barinaga, Charles J.; Eiden, Gregory C.

    2015-01-01

    We report results of a novel technique using an Inductively Coupled Plasma Mass Spectrometer (ICP-MS) as a method of source preparation for alpha spectrometry. This method produced thin, contaminant free 241Am samples which yielded extraordinary energy resolution which appear to be at the lower limit of the detection technology used in this research.

  4. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    SciTech Connect

    Land, C.E.; Peercy, P.S.

    1983-07-05

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H/sup +/, He/sup +/, Ne/sup +/, Ar/sup +/, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1 X 10/sup 12/ to 1 X 10/sup 17/, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

  5. Photosensitivity enhancement of PLZT ceramics by positive-ion implantation

    SciTech Connect

    Peercy, P.S.; Land, C.E.

    1982-01-28

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and nonvolatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H/sup +/, He/sup +/, Ne/sup +/, Ar/sup +/, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-uv light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1 x 10/sup 12/ to 1 x 10/sup 17/, and with sufficient energy, from 100 to 500 keV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

  6. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    DOEpatents

    Land, Cecil E.; Peercy, Paul S.

    1983-01-01

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

  7. Two-dimensional profiling of large tilt angle, low energy boron implanted structure using secondary-ion mass spectrometry

    SciTech Connect

    Cooke, G.A.; Pearson, P.; Gibbons, R.; Dowsett, M.G.; Hill, C.

    1996-01-01

    Experimentally determined two-dimensional dopant maps of implants into semiconductors are required for the calibration and verification of process simulation tools used in very large scale integrated (VLSI) circuit design. Direct measurement with currently available techniques is not possible owing to the physical size of the areas in question. Using a specially fabricated structure and a modified secondary-ion mass spectroscopy instrument, it has been possible to measure profiles with high spatial resolution and sensitivity. In this article we present the results of an investigation of a complex boron implant into silicon, as used in advanced VLSI {ital P}-type metal{endash}oxide{endash}semiconductor source{endash}drain regions, and compare it with results from process simulators. {copyright} {ital 1996 American Vacuum Society}

  8. Laser-driven ion sources for metal ion implantation for the reduction of dry friction

    SciTech Connect

    Boody, F. P.; Juha, L.; Kralikova, B.; Krasa, J.; Laska, L.; Masek, K.; Pfeifer, M.; Rohlena, K.; Skala, J.; Straka, P.; Perina, V.; Woryna, E.; Giersch, D.; Hoepfl, R.; Kelly, J. C.; Hora, H.

    1997-04-15

    The anomalously high ion currents and very high ionization levels of laser-produced plasmas give laser-driven ion sources significant advantages over conventional ion sources. In particular, laser-driven ion sources should provide higher currents of metal ions at lower cost, for implantation into solids in order to improve their material properties such as friction. The energy and charge distributions for Pb and Sn ions produced by ablation of solid targets with {approx}25 J, {approx}300 ps iodine laser pulses, resulting in up to 48-times ionized MeV ions, as well as the optimization of focus position, are presented. Implantation of these ions into Ck-45 steel, without electrostatic acceleration, produced profiles with two regions. Almost all of the ions were implanted in a near surface region a few nm deep. However, a small but significant number of ions were implanted as deep as could be measured with Rutherford backscattering (RBS), here 150 nm for Sn and 250 nm for Pb. For the implanted ion densities and profiles achieved, no change in the coefficient of friction was measured for either ion.

  9. Investigation on plasma immersion ion implantation treated medical implants.

    PubMed

    Mändl, S; Sader, R; Thorwarth, G; Krause, D; Zeilhofer, H-F; Horch, H H; Rauschenbach, B

    2002-08-01

    In this work the biocompatibility of osteosynsthesis plates treated with plasma immersion ion implantation (PIII) was tested using a rat model. Small rods (Ø 0.9 mm, and length 10 mm) prepared from different materials-pure Ti, anodised Ti, and two NiTi alloys (SE 508, and SM 495)-were implanted with oxygen by PIII to form a rutile surface layer and subsequently inserted into rat femurs, together with a control group of untreated samples. The results of the biomechanical tests correlate with the histological results, and show that plasma immersion ion implantation leads to an increase of biocompatibility and osseointegration of titanium and NiTi, albeit no improvement of the (bad) biocompatibility of the anodised Ti. Despite the layer thickness of up to 0.5 microm a strong influence of the base material is still present. PMID:12202173

  10. Improvement of Contact Resistance with Molecular Ion Implantation

    SciTech Connect

    Lee, Kyung Won; Lee, Jin Ku; Oh, Jae Geun; Ju, Min Ae; Jeon, Seung Joon; Ku, Ja Chun; Park, Sung Ki; Huh, Tae Hoon; Kim, Steve; Ra, Geum Joo; Harris, Mark A.; Reece, Ronald N.; Yoon, Dae Ho

    2008-11-03

    Basic characteristics of ClusterBoron (B{sub 18}H{sub 22}) implantation were investigated for improving contact resistance in DRAM devices. Generally, {sup 49}BF{sub 2} has been widely used for contact implant application in DRAM manufacturing because of its higher productivity compared to monomer boron ({sup 11}B). However, because of limited activation in a low thermal budget ({approx}800 deg. C) anneal, the sheet resistance was saturated for doses over 5x10{sup 15} ions/cm{sup 2}. Although many investigations have been reported, such as {sup 30}BF implant mixed implant with monomer boron etc., no practical solution has been found for dramatic improvement of contact resistance in a productive manner. B{sub 18}H{sub 22} was developed to overcome the productivity limitations encountered in low energy, high dose boron implantation and the limited activation of {sup 49}BF{sub 2} due to co-implanted fluorine. In this study, basic characterization of the B{sub 18}H{sub 22} contact implant was performed through sheet resistance, SIMS (Secondary Ion Mass Spectrometry) and XTEM (cross-sectional transmission electron microscopy). The B{sub 18}H{sub 22} implants showed lower sheet resistance than conventional {sup 49}BF{sub 2} for 5x10{sup 15} ions/cm{sup 2} on bare wafer tests. Through XTEM study, we found the activation behavior of both B{sub 18}H{sub 22} and {sup 49}BF{sub 2} were directly related with the amorphous layer thickness and residual defects from low thermal budget anneal. PMOS contact resistance in the sub-70 nm device by B{sub 18}H{sub 22} implantation showed considerable improvement (about 30%), showing B{sub 18}H{sub 22} could replace the BF{sub 2} for contact implant in contact resistance implant.

  11. Influence of Oxygen Ion Implantation on the Damage and Annealing Kinetics of Iron-Implanted Sapphire

    SciTech Connect

    Hunn, J.D.; McHargue, C.J.

    1999-11-14

    The effects of implanted oxygen on the damage accumulation in sapphire which was previously implanted with iron was studied for (0001) sapphire implanted with iron and then with oxygen. The energies were chosen to give similar projected ranges. One series was implanted with a 1:l ratio (4x10{sup 16} ions/cm{sup 2} each) and another with a ratio of 2:3 (4x10{sup 16} fe{sup +}/cm{sup 2}; 6x10{sup 16} O{sup +}/cm{sup 2}). Retained damage, X, in the Al-sublattice, was compared to that produced by implantation of iron alone. The observed disorder was less for the dual implantations suggesting that implantation of oxygen enhanced dynamic recovery during implantation. Samples were annealed for one hour at 800 and 1200 C in an oxidizing and in a reducing atmosphere. No difference was found in the kinetics of recovery in the Al-sublattice between the two dual implant conditions. However, the rate of recovery was different for each from samples implanted with iron alone.

  12. Optical image storage in ion implanted PLZT ceramics

    SciTech Connect

    Peercy, P. S.; Land, C. E.

    1980-01-01

    Optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-uv light with photon energies greater than the band gas energy of approx. 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform uv illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of greater than or equal to 100:1 and spatial resolution of approx. 10 ..mu..m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. 100 mJ/cm/sup 2/) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. It was found in H, He, and Ar implanted PLZT that the photosensitivity can be significantly increased by ion implantation into the surface to be exposed. The photosensitivity after implantation with 5 x 10/sup 14/ 500 keV Ar/cm/sup 2/ is increased by about three orders of magnitude over that of unimplanted PLZT. The image storage process and the effect of ion implantation is presented along with a phenomenological model which describes the enhancement in photosensitivity obtained by ion implantation. This model takes into account both light- and ion implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage with light intensity for ion implanted PLZT.

  13. Annealing of ion implanted gallium nitride

    SciTech Connect

    Tan, H.H.; Williams, J.S.; Zou, J.; Cockayne, D.J.; Pearton, S.J.; Zolper, J.C.; Stall, R.A.

    1998-03-01

    In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that amorphous layers, which can result from high-dose implantation, recrystallize between 800 and 1100{degree}C to very defective polycrystalline material. Lower-dose implants (down to 5{times}10{sup 13}cm{sup {minus}2}), which are not amorphous but defective after implantation, also anneal poorly up to 1100{degree}C, leaving a coarse network of extended defects. Despite such disorder, a high fraction of Te is found to be substitutional in GaN both following implantation and after annealing. Furthermore, although elevated-temperature implants result in less disorder after implantation, this damage is also impossible to anneal out completely by 1100{degree}C. The implications of this study are that considerably higher annealing temperatures will be needed to remove damage for optimum electrical properties. {copyright} {ital 1998 American Institute of Physics.}

  14. Suppression of repetitive surface exfoliation of Inconel 625 implanted sequentially with helium ions of different energies (20 100 keV)

    NASA Astrophysics Data System (ADS)

    Rao, A. S.; Whitton, J. L.; Kaminsky, M.

    Studies were conducted to explore if the surface exfoliation of Inconel 625, typical for 100 keV 4He + irradiations can be reduced by pre-irradiating the surfaces with helium ions sequentially over the energy range 20 to 50 keV. Polished, polycrystalline Inconel 625 samples were irradiated at 298K and 573K with 4He + at six different energies in the range from 20 to 50 keV in an order of decreasing energies. For each energy the dose was 0.13 C/cm 2, resulting in a total dose of 0.89 C/cm 2. Subsequently, these samples were implanted with 100 keV 4He + to a dose of 1.0 C/cm 2 or 2.0 C/cm 2. The results reveal that the low energy 4He + implants prior to the 100 keV 4He + implant reduce significantly the erosion yield typical for 100-keV 4He + irradiations alone. For 573K these reduced yields are still about one order of magnitude greater than physical sputtering yields.

  15. [Improve wear resistance of UHMWPE by O+ ion implanted].

    PubMed

    Xiong, Dangsheng

    2003-12-01

    Ultra high molecular weight polyethylene (UHMWPE) was implanted with 450 keV and 100 keV O+ ions at dosage of 1 x 10(15)/cm2, 5 x 10(15)/cm2, 3 x 10(14)/cm2, respectively. Its wear behaviors were studied under dry friction condition and lubrication by means of distilled water using a pin-on-disk tribometer with a Si3N4 ceramic ball as a counterface. The wear surfaces were examined with SEM. The experimental results showed that the wear rate of implanted UHMWPE is lower than that of un-implanted UHMWPE under both dry and distilled friction conditions, especially for 450 keV energy and 5 x 10(15)/cm2 dose implantation. The friction coefficient of O+ ions implanted UHMWPE is higher than that of un-implanted UHMWPE under both dry and distilled friction conditions. The adhesive, plow and plastic deformation are the wearing mechanism for un-implanted UHMWPE; the fatigue and abrasive wear are that for implanted UHMWPE. PMID:14716850

  16. Ion implantation of silicon nitride ball bearings

    SciTech Connect

    Williams, J.M.; Miner, J.R.

    1996-09-01

    Hypothesis for ion implantation effect was that stress concentrations reflected into the bulk due to topography such as polishing imperfections, texture in the race, or transferred material, might be reduced due to surface amorphization. 42 control samples were tested to an intended runout period of 60 h. Six ion implanted balls were tested to an extended period of 150 h. Accelerated testing was done in a V groove so that wear was on two narrow wear tracks. Rutherford backscattering, XRPS, profilometry, optical microscopy, nanoindentation hardness, and white light interferometry were used. The balls were implanted with 150-keV C ions at fluence 1.1x10{sup 17}/cm{sup 2}. The samples had preexisting surface defects (C-cracks), so the failure rate of the control group was unacceptable. None of the ion-implanted samples failed in 150 h of testing. Probability of randomly selecting 6 samples from the control group that would perform this well is about 5%, so there is good probability that ion implantation improved performance. Possible reasons are discussed. Wear tracks, microstructure, and impurity content were studied in possible relation to C-cracks.

  17. Dependence of implantation sequence on surface blistering characteristics due to H and He ions co-implanted in silicon

    NASA Astrophysics Data System (ADS)

    Liang, J. H.; Hsieh, H. Y.; Wu, C. W.; Lin, C. M.

    2015-12-01

    This study investigated surface blistering characteristics due to H and He ions co-implanted in silicon at room temperature. The H and He ion energies were 40 and 50 keV, respectively, so that their depth profiles were similar. The total implantation fluence for the H and He ions was 5 × 1016 cm-2 under various fluence fractions in the H ions. The implantation sequences under investigation were He + H and H + He. Dynamic optical microscopy (DOM) was employed in order to dynamically analyze surface blistering characteristics. This study used DOM data to construct so-called time-temperature-transformation (T-T-T) curves to easily predict blistering and crater transformation at specific annealing times and temperatures. The results revealed that the curves of blister initialization, crater initialization, and crater completion in the He + H implant occurred at a lower annealing temperature but with a longer annealing time compared to those in the H + He implant. Furthermore, the threshold annealing temperatures for blister and crater formation in the He + H implant were lower than they were in the H + He implant. The size distributions of the blisters and craters in the He + H implant extended wider than those in the H + He implant. In addition, the He + H implant exhibited larger blisters and craters compared to the ones in the H + He implant. Since the former has a higher percentage of exfoliation area than the latter, it is regarded as the more optimal implantation sequence.

  18. Photosensitivity and imaging characteristics of ion-implanted PLZT ceramics

    SciTech Connect

    Land, C.E.

    1985-01-01

    We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.

  19. More-reliable SOS ion implantations

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1980-01-01

    Conducting layer prevents static charges from accumulating during implantation of silicon-on-sapphire MOS structures. Either thick conducting film or thinner film transparent to ions is deposited prior to implantation, and gaps are etched in regions to be doped. Grounding path eliminates charge flow that damages film or cracks sapphire wafer. Prevention of charge buildup by simultaneously exposing structure to opposite charges requires equipment modifications less practical and more expensive than deposition of conducting layer.

  20. Ion-implantation damage in silicate glasses

    NASA Astrophysics Data System (ADS)

    Arnold, G. W.

    Ion implantation is a rapid technique for simulating damage induced by alpha recoil nuclei in nuclear waste forms. The simulation has been found to be quite good in TEM comparisons with natural alpha decay damage in minerals, but leach rate differences have been observed in glass studies and were attributed to dose rate differences. The similarities between ion implantation and recoil nuclei as a means of producing damage suggest that insights into the long term behavior of glass waste forms can be obtained by examination of what is known about ion implantation damage in silicate glasses. This paper briefly reviews these effects and shows that leaching results in certain nuclear waste glasses can be understood as resulting from plastic flow and track overlap. Phase separation is also seen to be a possible consequence of damage induced compositional changes.

  1. An RFQ accelerator system for MeV ion implantation

    NASA Astrophysics Data System (ADS)

    Hirakimoto, Akira; Nakanishi, Hiroaki; Fujita, Hiroyuki; Konishi, Ikuo; Nagamachi, Shinji; Nakahara, Hiroshi; Asari, Masatoshi

    1989-02-01

    A 4-vane-type Radio-Frequency Quadrupole (RFQ) accelerator system for MeV ion implantation has been constructed and ion beams of boron and nitrogen have been accelerated successfully up to an energy of 1.01 and 1.22 MeV, respectively. The acceleration of phosphorus is now ongoing. The design was performed with two computer codes called SUPERFISH and PARMTEQ. The energy of the accelerated ions was measured by Rutherford backscattering spectroscopy. The obtained values agreed well with the designed ones. Thus we have confirmed the validity of our design and have found the possibility that the present RFQ will break through the production-use difficulty of MeV ion implantation.

  2. Improving Sustainability of Ion Implant Modules

    NASA Astrophysics Data System (ADS)

    Mayer, Jim

    2011-01-01

    Semiconductor fabs have long been pressured to manage capital costs, reduce energy consumption and increasingly improve efforts to recycle and recover resources. Ion implant tools have been high-profile offenders on all three fronts. They draw such large volumes of air for heat dissipation and risk reduction that historically, they are the largest consumer of cleanroom air of any process tool—and develop energy usage and resource profiles to match. This paper presents a documented approach to reduce their energy consumption and dramatically downsize on-site facilities support for cleanroom air manufacture and abatement. The combination produces significant capital expenditure savings. The case entails applying SAGS Type 1 (sub-atmospheric gas systems) toxic gas packaging to enable engineering adaptations that deliver the energy savings and cost benefits without any reduction in environmental health and safety. The paper also summarizes benefits as they relate to reducing a fabs carbon emission footprint (and longer range advantages relative to potential cap and trade programs) with existing technology.

  3. Evolution of defects in silicon carbide implanted with helium ions

    NASA Astrophysics Data System (ADS)

    Zhang, Chonghong; Song, Yin; Yang, Yitao; Zhou, Chunlan; Wei, Long; Ma, Hongji

    2014-05-01

    Effects of accumulation of radiation damage in silicon carbide are important concerns for the use of silicon carbide in advanced nuclear energy systems. In the present work lattice damage in silicon carbide crystal (4H type) implanted with 100 keV 4He+ ions was investigated with Rutherford backscattering spectrometry in channeling geometry (RBS/c) and positron beam Doppler broadening spectrometry (PBDB). Helium implantation was performed at the specimen temperature of 510 K to avoid amorphization of the SiC crystal. Fluences of helium ions were selected to be in the range from 1 × 1016 to 3 × 1016 ions cm-2, around the dose threshold for the formation of observable helium bubbles under transmission electron microscopes (TEM). The RBS/c measurements show distinctly different annealing behavior of displaced Si atoms at doses below or above the threshold for helium bubble formation. The RBS/c yield in the peak damage region of the specimen implanted to 3 × 1016 He-ions cm-2 shows an increase on the subsequently thermal annealing above 873 K, which is readily ascribed to the extra displacement of Si atoms due to helium bubble growth. The RBS/c yield in the specimen implanted to a lower ion fluence of 1.5 × 1016 He-ions cm-2 decreases monotonously on annealing from ambient temperatures up to 1273 K. The PBDB measurements supply evidence of clustering of vacancies at temperatures from 510 to 1173 K, and dissociation of vacancy clusters above 1273 K. The similarity of annealing behavior in PBDB profiles for helium implantation to 1 × 1016 and 3 × 1016 ions cm-2 is ascribed to the saturation of trapping of positrons in vacancy type defects in the damaged layers in the specimens helium-implanted to the two dose levels.

  4. Ion implantation of diamond: Damage, doping, and lift-off

    SciTech Connect

    Parikh, N.R.; McGucken, E.; Swanson, M.L.; Hunn, J.D.; White, C.W.; Zuhr, R.A.

    1993-09-01

    In order to make good quality economical diamond electronic devices, it is essential to grow films and to dope these films to obtain n- and p- type conductivity. This review talk discuss first doping by ion implantation plus annealing of the implantation damage, and second flow to make large area single crystal diamonds. C implantation damage below an estimated Frenkel defect concentration of 7% could be recovered almost completely by annealing at 950C. For a defect concentration between 7 and 10%, a stable damage form of diamond (``green diamond``) was formed by annealing. At still higher damage levels, the diamond graphitized. To introduce p-type doping, we have co-implanted B and C into natural diamond at 77K, followed by annealing up to 1100C. The resulting semiconducting material has electrical properties similar to those of natural B-doped diamond. To create n-type diamond, we have implanted Na{sup +}, P+ and As{sup +} ions and have observed semiconducting behavior. This has been compared with carbon or noble element implantation, in an attempt to isolate the effect of radiation damage. Recently, in order to obtain large area signal crystals, we have developed a novel technique for removing thin layers of diamond from bulk or homoepitaxial films. This method consists of ion implantation, followed by selective etching. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond buried at a controlled depth. This layer is graphitized and selectivity etched either by heating at 550C in an oxygen ambient or by electrolysis. This process successfully lifts off the diamond plate above the graphite layer. The lift-off method, combined with well-established homoepitaxial growth processes, has potential for fabrication of large area single-crystal diamond sheets.

  5. Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

    NASA Technical Reports Server (NTRS)

    Fonash, S. J.

    1985-01-01

    New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

  6. Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

    SciTech Connect

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Reedy, Robert; Bateman, Nicholas; Stradins, Pauls

    2015-06-14

    We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 degrees C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ~ 14 fA/cm2 for Si:P, and Jo ~ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

  7. Hybrid quantum circuit with implanted erbium ions

    SciTech Connect

    Probst, S.; Rotzinger, H.; Tkalčec, A.; Kukharchyk, N.; Wieck, A. D.; Wünsch, S.; Siegel, M.; Ustinov, A. V.; Bushev, P. A.

    2014-10-20

    We report on hybrid circuit quantum electrodynamics experiments with focused ion beam implanted Er{sup 3+} ions in Y{sub 2}SiO{sub 5} coupled to an array of superconducting lumped element microwave resonators. The Y{sub 2}SiO{sub 5} crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y{sub 2}SiO{sub 5} sample. We demonstrate the integration of these engineered erbium spin ensembles with superconducting circuits.

  8. Photographic-image storage in ion-implanted PLZT ceramics

    SciTech Connect

    Peercy, P.C.; Land, C.E.

    1982-01-01

    Photographic images can be stored in transparent lead lanthanum zirconate titanate (PLZT) ceramics using near-UV light with photon energies near the band gap energy of 3.42 eV. Coimplanting inert ions, e.g., Ar, Ne and He, into the surface exposed to image light can increase near-UV photosensitivity by a factor of almost 10/sup 4/, with no degradation of image quality, so that the exposure energy threshold is reduced from approx. 100 mJ/cm/sup 2/ to approx. 10 ..mu..Jcm/sup 2/. Coimplanting chemically active and inert ions, e.g., Al or Cr and Ne, can result in similar improvement of the extrinsic (visible light) photosensitivity and in an essentially flat photoresponse from about 400 to 600 nm. In addition, thermal diffusion of Al followed by Ne implantation yield photosensitivity increases in the near-UV comparable to the best results obtained to date with ion implantation.

  9. Mechanical properties of pulsed laser-deposited hydroxyapatite thin films implanted at high energy with N + and Ar + ions. Part II: nano-scratch tests with spherical tipped indenter

    NASA Astrophysics Data System (ADS)

    Pelletier, H.; Nelea, V.; Mille, P.; Muller, D.

    2004-02-01

    In this study we report a method to improve the adherence of hydroxyapatite (HA) thin films, using an ion beam implantation treatment. Crystalline HA films were grown by pulsed laser deposition technique (PLD), using an excimer KrF * laser. The films were deposited at room temperature in vacuum on Ti-5Al-2.5Fe alloy substrates previously coated with a ceramic TiN buffer layer and then annealed in ambient air at (500-600) °C. After deposition the films were implanted with N + and Ar + ions accelerated at high energy (1-1.5 MeV range) at a fixed dose of 10 16 cm -2. The intrinsic mechanical resistance and adherence to the TiN buffer layer of the implanted HA films have been evaluated by nano-scratch tests. We used for measurements a spherical indenter with a tip radius of 5 μm. Different scratch tests have been performed on implanted and unimplanted areas of films to put into evidence the effects of N + and Ar + ion implantation process on the films properties. Results show an enhancement of the dynamic mechanical properties in the implanted zones and influence of the nature of the implanted species. The best results are obtained for films implanted with nitrogen.

  10. Turning an organic semiconductor into a low-resistance material by ion implantation

    NASA Astrophysics Data System (ADS)

    Fraboni, Beatrice; Scidà, Alessandra; Cosseddu, Piero; Wang, Yongqiang; Nastasi, Michael; Milita, Silvia; Bonfiglio, Annalisa

    2015-12-01

    We report on the effects of low energy ion implantation on thin films of pentacene, carried out to investigate the efficacy of this process in the fabrication of organic electronic devices. Two different ions, Ne and N, have been implanted and compared, to assess the effects of different reactivity within the hydrocarbon matrix. Strong modification of the electrical conductivity, stable in time, is observed following ion implantation. This effect is significantly larger for N implants (up to six orders of magnitude), which are shown to introduce stable charged species within the hydrocarbon matrix, not only damage as is the case for Ne implants. Fully operational pentacene thin film transistors have also been implanted and we show how a controlled N ion implantation process can induce stable modifications in the threshold voltage, without affecting the device performance.

  11. Erbium ion implantation into different crystallographic cuts of lithium niobate

    NASA Astrophysics Data System (ADS)

    Nekvindova, P.; Svecova, B.; Cajzl, J.; Mackova, A.; Malinsky, P.; Oswald, J.; Kolistsch, A.; Spirkova, J.

    2012-02-01

    Single crystals like lithium niobate are frequently doped with optically active rare-earth or transition-metal ions for a variety of applications in optical devices such as solid-state lasers, amplifiers or sensors. To exploit the potential of the Er:LiNbO 3, one must ensure high intensity of the 1.5 μm luminescence as an inevitable prerequisite. One of the important factors influencing the luminescence properties of a lasing ion is the crystal field of the surrounding, which is inevitably determined by the crystal structure of the pertinent material. From that point it is clear that it cannot be easy to affect the resulting luminescence properties - intensity or position of the luminescence band - without changing the structure of the substrate. However, there is a possibility to utilise a potential of the ion implantation of the lasing ions, optionally accompanied with a sensitising one, that can, besides the doping, also modify the structure of the treated area od the crystal. This effect can be eventually enhanced by a post-implantation annealing that may help to recover the damaged structure and hence to improve the desired luminescence. In this paper we are going to report on our experiments with ion-implantation technique followed with subsequent annealing could be a useful way to influence the crystal field of LN. Optically active Er:LiNbO 3 layers were fabricated by medium energy implantation under various experimental conditions. The Er + ions were implanted at energies of 330 and 500 keV with fluences ranging from 1.0 × 10 15 to 1.0 × 10 16 ion cm -2 into LiNbO 3 single-crystal cuts of both common and special orientations. The as-implanted samples were annealed in air and oxygen at two different temperatures (350 and 600 °C) for 5 h. The depth concentration profiles of the implanted erbium were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He + ions. The photoluminescence spectra of the samples were measured to determine the

  12. Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon.

    PubMed

    Luo, J; Li, L H; Liu, H T; Yu, K M; Xu, Y; Zuo, X J; Zhu, P Z; Ma, Y F; Fu, Ricky K Y; Chu, Paul K

    2014-06-01

    Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering. PMID:24985818

  13. Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

    NASA Astrophysics Data System (ADS)

    Luo, J.; Li, L. H.; Liu, H. T.; Yu, K. M.; Xu, Y.; Zuo, X. J.; Zhu, P. Z.; Ma, Y. F.; Fu, Ricky K. Y.; Chu, Paul K.

    2014-06-01

    Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.

  14. Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

    SciTech Connect

    Luo, J.; Li, L. H. E-mail: paul.chu@cityu.edu.hk; Liu, H. T.; Xu, Y.; Zuo, X. J.; Zhu, P. Z.; Ma, Y. F.; Yu, K. M.; Fu, Ricky K. Y.; Chu, Paul K. E-mail: paul.chu@cityu.edu.hk

    2014-06-15

    Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.

  15. Rhenium ion beam for implantation into semiconductors

    SciTech Connect

    Kulevoy, T. V.; Seleznev, D. N.; Alyoshin, M. E.; Kraevsky, S. V.; Yakushin, P. E.; Khoroshilov, V. V.; Gerasimenko, N. N.; Smirnov, D. I.; Fedorov, P. A.; Temirov, A. A.

    2012-02-15

    At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.

  16. Surface mechanical properties - effects of ion implantation

    NASA Astrophysics Data System (ADS)

    Herman, Herbert

    1981-05-01

    Ion implantation has been used to modify the mechanical properties of a wide range of metals and alloys. The affected properties which have been studied include friction and wear, erosion and fatigue. Both BCC and FCC systems have been examined, with the major effort being directed at the former, due to the strong influence of interstitial implantants on mechanical properties of BCC and because of the industrial utility of these alloys. In seeking the microstructural origins of these sometimes dramatic effects, researchers have employed numerous surface analysis techniques, including backscattering and electron spectroscopy, TEM, SEM, X-ray and Mössbauer analysis and internal friction measurements. The interactions of surface dislocation structures with implantation-induced imperfections, surface alloying, and precipitation phenomena are discussed. A review is given of the current status of activities as represented by a number of research groups.

  17. Accelerating degradation rate of pure iron by zinc ion implantation.

    PubMed

    Huang, Tao; Zheng, Yufeng; Han, Yong

    2016-12-01

    Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement. In this work, metal vapor vacuum arc technology was adopted to implant zinc ions into the surface of pure iron. Results showed that the implantation depth of zinc ions was about 60 nm. The degradation rate of pure iron was found to be accelerated after zinc ion implantation. The cytotoxicity tests revealed that the implanted zinc ions brought a slight increase on cytotoxicity of the tested cells. In terms of hemocompatibility, the hemolysis of zinc ion implanted pure iron was lower than 2%. However, zinc ions might induce more adhered and activated platelets on the surface of pure iron. Overall, zinc ion implantation can be a feasible way to accelerate the degradation rate of pure iron for biodegradable applications. PMID:27482462

  18. Accelerating degradation rate of pure iron by zinc ion implantation

    PubMed Central

    Huang, Tao; Zheng, Yufeng; Han, Yong

    2016-01-01

    Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement. In this work, metal vapor vacuum arc technology was adopted to implant zinc ions into the surface of pure iron. Results showed that the implantation depth of zinc ions was about 60 nm. The degradation rate of pure iron was found to be accelerated after zinc ion implantation. The cytotoxicity tests revealed that the implanted zinc ions brought a slight increase on cytotoxicity of the tested cells. In terms of hemocompatibility, the hemolysis of zinc ion implanted pure iron was lower than 2%. However, zinc ions might induce more adhered and activated platelets on the surface of pure iron. Overall, zinc ion implantation can be a feasible way to accelerate the degradation rate of pure iron for biodegradable applications. PMID:27482462

  19. Plasma immersion ion implantation for reducing metal ion release

    SciTech Connect

    Diaz, C.; Garcia, J. A.; Maendl, S.; Pereiro, R.; Fernandez, B.; Rodriguez, R. J.

    2012-11-06

    Plasma immersion ion implantation of Nitrogen and Oxygen on CoCrMo alloys was carried out to improve the tribological and corrosion behaviors of these biomedical alloys. In order to optimize the implantation results we were carried experiments at different temperatures. Tribocorrosion tests in bovine serum were used to measure Co, Cr and Mo releasing by using Inductively Coupled Plasma Mass Spectrometry analysis after tests. Also, X-ray Diffraction analysis were employed in order to explain any obtained difference in wear rate and corrosion tests. Wear tests reveals important decreases in rate of more than one order of magnitude for the best treatment. Moreover decreases in metal release were found for all the implanted samples, preserving the same corrosion resistance of the unimplanted samples. Finally this paper gathers an analysis, in terms of implantation parameters and achieved properties for industrial implementation of these treatments.

  20. Enhanced life ion source for germanium and carbon ion implantation

    SciTech Connect

    Hsieh, Tseh-Jen; Colvin, Neil; Kondratenko, Serguei

    2012-11-06

    Germanium and carbon ions represent a significant portion of total ion implantation steps in the process flow. Very often ion source materials that used to produce ions are chemically aggressive, especially at higher temperatures, and result in fast ion source performance degradation and a very limited lifetime [B.S. Freer, et. al., 2002 14th Intl. Conf. on Ion Implantation Technology Proc, IEEE Conf. Proc., p. 420 (2003)]. GeF{sub 4} and CO{sub 2} are commonly used to generate germanium and carbon beams. In the case of GeF{sub 4} controlling the tungsten deposition due to the de-composition of WF{sub 6} (halogen cycle) is critical to ion source life. With CO{sub 2}, the materials oxidation and carbon deposition must be controlled as both will affect cathode thermionic emission and anti-cathode (repeller) efficiencies due to the formation of volatile metal oxides. The improved ion source design Extended Life Source 3 (Eterna ELS3) together with its proprietary co-gas material implementation has demonstrated >300 hours of stable continuous operation when using carbon and germanium ion beams. Optimizing cogas chemistries retard the cathode erosion rate for germanium and carbon minimizes the adverse effects of oxygen when reducing gas is introduced for carbon. The proprietary combination of hardware and co-gas has improved source stability and the results of the hardware and co-gas development are discussed.

  1. Engineering single photon emitters by ion implantation in diamond.

    PubMed

    Naydenov, B; Kolesov, R; Batalov, A; Meijer, J; Pezzagna, S; Rogalla, D; Jelezko, F; Wrachtrup, J

    2009-11-01

    Diamond provides unique technological platform for quantum technologies including quantum computing and communication. Controlled fabrication of optically active defects is a key element for such quantum toolkit. Here we report the production of single color centers emitting in the blue spectral region by high energy implantation of carbon ions. We demonstrate that single implanted defects show sub-poissonian statistics of the emitted photons and can be explored as single photon source in quantum cryptography. Strong zero phonon line at 470.5 nm allows unambiguous identification of this defect as interstitial-related TR12 color center. PMID:19956415

  2. Studies of iron exposed to heavy ion implantation using positron annihilation spectroscopy

    NASA Astrophysics Data System (ADS)

    Horodek, P.; Dryzek, J.; Skuratov, V. A.

    2016-05-01

    Variable energy positron beam and positron lifetime spectroscopy were used to study pure iron exposed to irradiation with 167 MeV Xe26+ heavy ions with different doses of 1012, 1013, 5×1013, 1014 ions/cm2. The positron lifetime spectroscopy revealed the presence of large cluster of about 15-27 vacancies and dislocations. The dislocations are distributed at the depth of about 18 μm i.e. almost twice deeper than the ion implantation range from the surface exposed to the heavy ions implantation. Possible explanation is the long-range effect attributed to the ion implantation into materials.

  3. III-Nitride ion implantation and device processing

    SciTech Connect

    Zolper, J.C.; Shul, R.J.; Baca, A.G.; Pearton, S.J.; Abernathy, C.R.; Wilson, R.G.; Stall, R.A.; Shur, M.

    1996-06-01

    Ion implantation doping and isolation has played a critical role in realizing high performance photonic and electronic devices in all mature semiconductor materials; this is also expected for binary III-Nitride materials (InN, GaN, AlN) and their alloys as epitaxy improves and more advanced device structures fabricated. This paper reports on recent progress in ion implantation doping of III-Nitride materials that has led to the first demonstration of a GaN JFET (junction field effect transistor). The JFET was fabricated with all ion implantation doping; in particular, p-type doping of GaN with Ca has been demonstrated with an estimated acceptor ionization energy of 169 meV. O-implantation has also been studied and shown to yield n-type conduction with an ionization energy of {similar_to}29 meV. Neither Ca or O display measurable redistribution during a 1125 C, 15 s activation anneal which sets an upper limit on their diffusivity at this temperature of 2.7{times}10{sup {minus}13}cm{sup 2}/s.

  4. Fluorescence effect of ion-implanted sapphire doped with Ag/Cu/Fe elements

    NASA Astrophysics Data System (ADS)

    Chen, Hua-jian; Wang, Yu-hua; Zhang, Xiao-jian; Dai, Hou-mei; Ji, Ling-ling; Wang, Ru-wu; Wang, Deng-jing; Lu, Jian-duo; Zheng, Li-rong

    2015-11-01

    The fluorescence effect and microstructure of the nanocomposite samples prepared by ion implantation have been studied in the subsurface area. Based on the UV-vis and VUV data, the luminescence properties of implanted samples have been presented and discussed. The research indicates that the surface plasma resonance has an impact on the fluorescence effect notably. In addition, the fluorescence performance of the substrates implanted with ions is related to the outermost electron number of the injection element. And SRIM is used to analyze the energy loss in the process of ion implantation.

  5. Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation

    SciTech Connect

    Wang, M. J.; Yuan, L.; Chen, K. J.; Xu, F. J.; Shen, B.

    2009-04-15

    The diffusion mechanisms of fluorine ions in GaN are investigated by means of time-of-flight secondary ion mass spectrometry. Instead of incorporating fluorine ions close to the sample surface by fluorine plasma treatment, fluorine ion implantation with an energy of 180 keV is utilized to implant fluorine ions deep into the GaN bulk, preventing the surface effects from affecting the data analysis. It is found that the diffusion of fluorine ions in GaN is a dynamic process featuring an initial out-diffusion followed by in- diffusion and the final stabilization. A vacancy-assisted diffusion model is proposed to account for the experimental observations, which is also consistent with results on molecular dynamic simulation. Fluorine ions tend to occupy Ga vacancies induced by ion implantation and diffuse to vacancy rich regions. The number of continuous vacancy chains can be significantly reduced by a dynamic thermal annealing process. As a result, strong local confinement and stabilization of fluorine ions can be obtained in GaN crystal, suggesting excellent thermal stability of fluorine ions for device applications.

  6. Development of a microwave ion source for ion implantations.

    PubMed

    Takahashi, N; Murata, H; Kitami, H; Mitsubori, H; Sakuraba, J; Soga, T; Aoki, Y; Katoh, T

    2016-02-01

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P(+) beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P(+) beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH3 gas. PMID:26932118

  7. Development of a microwave ion source for ion implantations

    NASA Astrophysics Data System (ADS)

    Takahashi, N.; Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T.

    2016-02-01

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P+ beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P+ beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH3 gas.

  8. Xenon diffusion following ion implantation into feldspar - Dependence on implantation dose

    NASA Technical Reports Server (NTRS)

    Melcher, C. L.; Burnett, D. S.; Tombrello, T. A.

    1982-01-01

    The diffusion properties of xenon implanted into feldspar, a major mineral in meteorites and lunar samples, are investigated in light of the importance of xenon diffusion in the interpretation of early solar system chronologies and the retention time of solar-wind-implanted Xe. Known doses of Xe ions were implanted at an energy of 200 keV into single-crystal plagioclase targets, and depth profiles were measured by alpha particle backscattering before and after annealing for one hour at 900 or 1000 C. The fraction of Xe retained following annealing is found to be strongly dependent on implantation dose, being greatest at a dose of 3 x 10 to the 15th ions/sq cm and decreasing at higher and lower doses. Xe retention is also observed to be unaffected by two-step anneals, or by implantation with He or Ar. Three models of the dose-dependent diffusion properties are considered, including epitaxial crystal regrowth during annealing controlled by the extent of radiation damage, the creation of trapping sites by radiation damage, and the inhibition of recrystallization by Xe during annealing

  9. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    SciTech Connect

    Lee, Sung Bo Han, Heung Nam; Kim, Young-Min

    2015-07-15

    In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al{sub 2}O{sub 3}) with the substitution of Si for Al.

  10. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    NASA Astrophysics Data System (ADS)

    Lee, Sung Bo; Kim, Young-Min; Han, Heung Nam

    2015-07-01

    In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al2O3) with the substitution of Si for Al.

  11. Miniaturized EAPs with compliant electrodes fabricated by ion implantation

    NASA Astrophysics Data System (ADS)

    Shea, H.

    2011-04-01

    Miniaturizing dielectric electroactive polymer (EAP) actuators will lead to highly-integrated mechanical systems on a chip, combining dozens to thousands of actuators and sensors on a few cm2. We present here µm to mm scale electroactive polymer (EAP) devices, batch fabricated on the chip or wafer scale, based on ion-implanted electrodes. Low-energy (2-10 keV) implantation of gold ions into a silicone elastomer leads to compliant stretchable electrodes consisting of a buried 20 nm thick layer of gold nanoparticles in a silicone matrix. These electrodes: 1) conduct at strains up to 175%, 2) are patternable on the µm scale, 3) have stiffness similar to silicone, 4) have good conductivity, and 5) excellent adhesion since implanted in the silicone. The EAP devices consist of 20 to 30 µm thick silicone membranes with µm to mm-scale ion-implanted electrodes on both sides, bonded to a holder. Depending on electrode shape and membrane size, several actuation modes are possible. Characterization of 3mm diameter bi-directional buckling mode actuators, mm-scale tunable lens arrays, 2-axis beam steering mirrors, as well as arrays of 72 cell-size (100x200 µm2) actuators to apply mechanical strain to single cells are reported. Speeds of up to several kHz are observed.

  12. A comparative study of the structure and cytotoxicity of polytetrafluoroethylene after ion etching and ion implantation

    NASA Astrophysics Data System (ADS)

    Shtansky, D. V.; Glushankova, N. A.; Kiryukhantsev-Korneev, F. V.; Sheveiko, A. N.; Sigarev, A. A.

    2011-03-01

    The ion-plasma treatment has been widely used for modifying the surface structure of polymers in order to improve their properties, but it can lead to destruction of the surface and, as a consequence, to an increase in their toxicity. A comparative study of the structure and cytotoxicity of polytetrafluoroethylene (PTFE) after the ion etching (IE) and ion implantation (II) for 10 min with energy densities of 363 and 226 J/cm2, respectively, has been performed. It has been shown that, unlike the ion implantation, the ion etching results in the destruction of the polymer and in the appearance of the cytotoxicity. The factors responsible for this effect, which are associated with the bulk and surface treatment, as well as with the influence of the temperature, have been discussed.

  13. Surface stiffening and enhanced photoluminescence of ion implanted cellulose - polyvinyl alcohol - silica composite.

    PubMed

    Shanthini, G M; Sakthivel, N; Menon, Ranjini; Nabhiraj, P Y; Gómez-Tejedor, J A; Meseguer-Dueñas, J M; Gómez Ribelles, J L; Krishna, J B M; Kalkura, S Narayana

    2016-11-20

    Novel Cellulose (Cel) reinforced polyvinyl alcohol (PVA)-Silica (Si) composite which has good stability and in vitro degradation was prepared by lyophilization technique and implanted using N(3+) ions of energy 24keV in the fluences of 1×10(15), 5×10(15) and 1×10(16)ions/cm(2). SEM analysis revealed the formation of microstructures, and improved the surface roughness on ion implantation. In addition to these structural changes, the implantation significantly modified the luminescent, thermal and mechanical properties of the samples. The elastic modulus of the implanted samples has increased by about 50 times compared to the pristine which confirms that the stiffness of the sample surface has increased remarkably on ion implantation. The photoluminescence of the native cellulose has improved greatly due to defect site, dangling bonds and hydrogen passivation. Electric conductivity of the ion implanted samples was improved by about 25%. Hence, low energy ion implantation tunes the mechanical property, surface roughness and further induces the formation of nano structures. MG63 cells seeded onto the scaffolds reveals that with the increase in implantation fluence, the cell attachment, viability and proliferation have improved greatly compared to pristine. The enhancement of cell growth of about 59% was observed in the implanted samples compared to pristine. These properties will enable the scaffolds to be ideal for bone tissue engineering and imaging applications. PMID:27561534

  14. Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

    NASA Astrophysics Data System (ADS)

    Assmann, W.; Schubert, M.; Held, A.; Pichler, A.; Chill, A.; Kiermaier, S.; Schlösser, K.; Busch, H.; Schenk, K.; Streufert, D.; Lanzl, I.

    2007-04-01

    A biodegradable, β-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the β-emitter 32P. The influence of ion implantation and gamma sterilisation on degradation and 32P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (1015 ions/cm2) and gamma dose (25 kGy) are found to be tolerable.

  15. Develop techniques for ion implantation of PLZT for adaptive optics

    NASA Astrophysics Data System (ADS)

    Craig, R. A.; Batishko, C. R.; Brimhall, J. L.; Pawlewicz, W. T.; Stahl, K. A.

    1989-11-01

    Battelle Pacific Northwest Laboratory (PNL) conducted research into the preparation and characterization of ion-implanted adaptive optic elements based on lead-lanthanum-zirconate-titanate (PLZT). Over the 4-yr effort beginning FY 1985, the ability to increase the photosensitivity of PLZT and extend it to longer wavelengths was developed. The emphasis during the last two years was to develop a model to provide a basis for choosing implantation species and parameters. Experiments which probe the electronic structure were performed on virgin and implanted PLZT samples. Also performed were experiments designed to connect the developing conceptual model with the experimental results. The emphasis in FY 1988 was to extend the photosensitivity out to diode laser wavelengths. The experiments and modelling effort indicate that manganese will form appropriate intermediate energy states to achieve the longer wavelength photosensitivity. Preliminary experiments were also conducted to deposit thin film PLZT.

  16. Simulation of ion beam transport through the 400 Kv ion implanter at Michigan Ion Beam Laboratory

    SciTech Connect

    Naab, F. U.; Toader, O. F.; Was, G. S.

    2013-04-19

    The Michigan Ion Beam Laboratory houses a 400 kV ion implanter. An application that simulates the ion beam trajectories through the implanter from the ion source to the target was developed using the SIMION Registered-Sign code. The goals were to have a tool to develop an intuitive understanding of abstract physics phenomena and diagnose ion trajectories. Using this application, new implanter users of different fields in science quickly understand how the machine works and quickly learn to operate it. In this article we describe the implanter simulation application and compare the parameters of the implanter components obtained from the simulations with the measured ones. The overall agreement between the simulated and measured values of magnetic fields and electric potentials is {approx}10%.

  17. Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions

    NASA Astrophysics Data System (ADS)

    Bazarov, V. V.; Nuzhdin, V. I.; Valeev, V. F.; Vorobev, V. V.; Osin, Yu. N.; Stepanov, A. L.

    2016-03-01

    Amorphous silicon (a-Si) produced on surfaces of single-crystal substrates (c-Si) by low-energy low-dose implantation of silver ions is studied by spectral ellipsometry and electron backscatter diffraction. Implantation was done with an ion energy of 30 keV at a constant ion beam current density of 2 μA/cm2 and doses of 6.24·1012-1.25·1016 ions/cm2 on room temperature substrate targets. Irradiation was carried out with a current density of 0.1-5 μA/cm2 for implantation doses of 6.24·1013 and 1.87·1014 ions/cm2. It was found that spectral ellipsometry is an accurate andreliable method for monitoring low-dose ion implantation processes.

  18. Multiple Ion Implantation Effects on Wear and Wet Ability of Polyethylene Based Polymers

    NASA Astrophysics Data System (ADS)

    Torrisi, L.; Visco, A. M.; Campo, N.

    2004-10-01

    Polyethylene based polymers were ion implanted with multiple irradiations of different ions (N+, Ar+ and Kr+) at energies between 30 keV and 300 keV and doses ranging between 1013 and 1016 ions/cm2. The ion implantation dehydrogenises the polyethylene inducing cross-link effects in the residual polymer carbons. At high doses the irradiated surface show properties similar to graphite surfaces. The depth of the modified layers depends on the ion range in polyethylene at the incident ion energy. The chemical modification depends on the implanted doses and on the specie of the incident ions. A "pin-on-disc" machine was employed to measure the polymer wear against AISI-316 L stainless steel. A "contact-angle-test" machine was employed to measure the wet ability of the polymer surface for 1 μl pure water drop. Measurements demonstrate that the multiple ion implantation treatments decrease the surface wear and the surface wetting and produce a more resistant polymer surface. The properties of the treated surfaces improves the polymer functionality for many bio-medical applications, such as those relative to the polyethylene friction discs employed in knee and hip prosthesis joints. The possibility to use multiply ion implantations of polymers with traditional ion implanters and with laser ion sources producing plasmas is investigated.

  19. Carbon, nitrogen, and oxygen ion implantation of stainless steel

    SciTech Connect

    Rej, D.J.; Gavrilov, N.V.; Emlin, D.

    1995-12-31

    Ion implantation experiments of C, N, and O into stainless steel have been performed, with beam-line and plasma source ion implantation methods. Acceleration voltages were varied between 27 and 50 kV, with pulsed ion current densities between 1 and 10 mA/cm{sup 2}. Implanted doses ranged from 0.5 to 3 {times} 10{sup 18}cm{sup -2}, while workpiece temperatures were maintained between 25 and 800 C. Implant concentration profiles, microstructure, and surface mechanical properties of the implanted materials are reported.

  20. Computational stochastic model of ions implantation

    SciTech Connect

    Zmievskaya, Galina I. Bondareva, Anna L.; Levchenko, Tatiana V.; Maino, Giuseppe

    2015-03-10

    Implantation flux ions into crystal leads to phase transition /PT/ 1-st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, Kolmogorov-Feller and Einstein-Smolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.

  1. Mutagenesis of Arabidopsis Thaliana by N+ Ion Implantation

    NASA Astrophysics Data System (ADS)

    Zhang, Genfa; Shi, Xiaoming; Nie, Yanli; Jiang, Shan; Zhou, Hongyu; Lu, Ting; Zhang, Jun

    2006-05-01

    Ion implantation, as a new biophysically mutagenic technique, has shown a great potential for crop breeding. By analyzing polymorphisms of genomic DNA through RAPD-based DNA analysis, we compared the frequency and efficiency of somatic and germ-line mutations of Arabidopsis thaliana treated with N+ ion implantation and γ-rays radiation. Our data support the following conclusions: (1) N+ ion implantation can induce a much wider spectrum of mutations than γ-rays radiation does; (2) Unlike the linear correlation between the doses and their effect in γ-rays radiation, the dose-effect correlation in N+ ion implantation is nonlinear; (3) Like γ-rays radiation, both somatic and germ-line mutations could be induced by N+ ion implantation; and (4) RAPD deletion patterns are usually seen in N+ ion implantation induced mutation.

  2. Cell attachment of polypropylene surface-modified by COOH + ion implantation

    NASA Astrophysics Data System (ADS)

    Li, D. J.; Niu, L. F.

    2002-06-01

    Carboxy ion (COOH +) implantation was performed at the energy of 50 keV with fluences ranging from 1×10 14 to 1×10 15 ions/cm 2 at room temperature for polypropylene (PP). The effects of ion implantation on cells (immune macrophages, 3T3 mouse fibroblasts and human endothelial cells) were studied in vitro. Tests of cell attachment gave interesting results that the 3T3 mouse fibroblasts and human endothelial cells cultured on the surface of the implanted PP showed much better attachment and proliferation than that on pristine PP. At the same time, the COOH + ion implantation also induced low macrophage attachment with normal cellular morphology. Results of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared (FTIR) analysis showed that COOH + ion implantation caused the rearrangement of chemical bonds and the formation of some new O-containing groups, which was responsible for the enhancement of the biocompatibility of PP.

  3. Shallow nitrogen ion implantation: Evolution of chemical state and defect structure in titanium

    NASA Astrophysics Data System (ADS)

    Manojkumar, P. A.; Chirayath, V. A.; Balamurugan, A. K.; Krishna, Nanda Gopala; Ilango, S.; Kamruddin, M.; Amarendra, G.; Tyagi, A. K.; Raj, Baldev

    2016-09-01

    Evolution of chemical states and defect structure in titanium during low energy nitrogen ion implantation by Plasma Immersion Ion Implantation (PIII) process is studied. The underlying process of chemical state evolution is investigated using secondary ion mass spectrometry and X-ray photoelectron spectroscopy. The implantation induced defect structure evolution as a function of dose is elucidated using variable energy positron annihilation Doppler broadening spectroscopy (PAS) and the results were corroborated with chemical state. Formation of 3 layers of defect state was modeled to fit PAS results.

  4. Ca and O ion implantation doping of GaN

    SciTech Connect

    Zolper, J.C.; Wilson, R.G.; Pearton, S.J.; Stall, R.A.

    1996-04-01

    {ital p}- and {ital n}-type doping of GaN have been realized by ion implantation of Ca and O, respectively. Rapid thermal annealing at 1100{degree}C or higher is required to achieve {ital p}-type conduction in Ca or Ca+P implanted samples with an estimated ionization level of 169 meV and a corresponding activation efficiency of {approximately}100{percent}. This is the first experimental report of an acceptor species in GaN, other than Mg, with an ionization energy level less than 180 meV. O-implanted GaN displays an ionization level of {approximately}29 meV but with an activation efficiency of only 3.6{percent} after a 1050{degree}C anneal that may result from insufficient vacancy generation for the lighter O ion or from the existence of a second, deeper O energy level. Neither Ca or O displayed measurable redistribution, based on secondary ion mass spectrometry measurements, even after a 1125{degree}C anneal. {copyright} {ital 1996 American Institute of Physics.}

  5. Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation

    SciTech Connect

    Shcherbachev, K. D. Voronova, M. I.; Bublik, V. T.; Mordkovich, V. N. Pazhin, D. M.; Zinenko, V. I.; Agafonov, Yu. A.

    2013-12-15

    The influence of the implantation of silicon single crystals by fluorine, nitrogen, oxygen, and neon ions on the distribution of strain and the static Debye-Waller factor in the crystal lattice over the implanted-layer depth has been investigated by high-resolution X-ray diffraction. The density depth distribution in the surface layer of native oxide has been measured by X-ray reflectometry. Room-temperature implantation conditions have ensured the equality of the suggested ranges of ions of different masses and the energies transferred by them to the target. It is convincingly shown that the change in the structural parameters of the radiation-damaged silicon layer and the native oxide layer depend on the chemical activity of the implanted ions.

  6. Experimental investigation of plasma-immersion ion implantation treatment for biocompatible polyurethane implants production

    NASA Astrophysics Data System (ADS)

    Iziumov, R. I.; Beliaev, A. Y.; Kondyurina, I. V.; Shardakov, I. N.; Kondyurin, A. V.; Bilek, M. M.; McKenzie, D. R.

    2016-04-01

    Modification of the surface layer of polyurethane with plasma-immersion ion implantation (PIII) and studying its physical and chemical changes have been discussed in this paper. The goal of the research was to obtain carbonized layer allowing creating biocompatible polyurethane implants. The experiments of PIII treatment in various modes were performed. The investigation of the modified surface characteristics was carried out by observing the kinetics of free surface energy for two weeks after treatment. The regularities between treatment time and the level of free surface energy were detected. The explanation of high energy level was given through the appearance of free radicals in the surface layer of material. The confirmation of the chemical activation of the polyurethane surface after PIII treatment was obtained.

  7. Temperature behavior of damage in sapphire implanted with light ions

    NASA Astrophysics Data System (ADS)

    Alves, E.; Marques, C.; Sáfrán, G.; McHargue, Carl J.

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 × 1016-1 × 1017 cm-2) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 °C and 1000 °C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 × 1017 cm-2. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 °C and 1000 °C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  8. Applications of ion implantation for high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Minnucci, J. A.; Kirkpatrick, A. R.

    1977-01-01

    Ion implantation is utilized for the dopant introduction processes necessary to fabricate a silicon solar cell. Implantation provides a versatile powerful tool for development of high efficiency cells. Advantages and problems of implantation and the present status of developmental use of the technique for solar cells are discussed.

  9. Flame annealing of ion implanted silicon

    SciTech Connect

    Narayan, J.; Young, R.T.

    1983-01-01

    The authors investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200/sup 0/C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a defect-free annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening, i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formation of 90/sup 0/ dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20-1.25 and low reverse bias currents.

  10. All-ion-implantation process for integrated circuits

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1979-01-01

    Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.

  11. Ion implantation to reduce wear on polyethylene prosthetic devices. Rept. for Aug 89-Jan 91

    SciTech Connect

    Not Available

    1991-05-01

    Researchers studied the use of ion implantation to improve the wear performance of ultra high molecular weight polyethylene (UHMWPE). UHMWPE samples were implanted with high energy ions, tested for wear performance, and compared to unimplanted control samples. Surface friction and hardness measurements, Raman scattering, Rutherford backscattering (RBS), water contact angle, and film transfer tests were performed to characterize the surface property changes of implanted UHMWPE samples. Results indicated a 90% reduction in wear on implanted UHMWPE disks. Implantation increased surface microhardness and surface energy. The Raman spectrum revealed a diamond-like signature, indicting carbon bonds of a different nature than those found in unimplanted polyehtylene. Photographic analysis of pins used in wear testing revealed differences between implanted and unimplanted samples in the polyethylene film transferred in the initial stages of wear from the disk to the pin.

  12. A novel method for effective sodium ion implantation into silicon

    SciTech Connect

    Lu Qiuyuan; Chu, Paul K.

    2012-07-15

    Although sodium ion implantation is useful to the surface modification of biomaterials and nano-electronic materials, it is a challenging to conduct effective sodium implantation by traditional implantation methods due to its high chemical reactivity. In this paper, we present a novel method by coupling a Na dispenser with plasma immersion ion implantation and radio frequency discharge. X-ray photoelectron spectroscopy (XPS) depth profiling reveals that sodium is effectively implanted into a silicon wafer using this apparatus. The Na 1s XPS spectra disclose Na{sub 2}O-SiO{sub 2} bonds and the implantation effects are confirmed by tapping mode atomic force microscopy. Our setup provides a feasible way to conduct sodium ion implantation effectively.

  13. Hydrophilic property by contact angle change of ion implanted polycarbonate

    SciTech Connect

    Lee, Chan Young; Kil, Jae Keun

    2008-02-15

    In this study, ion implantation was performed onto a polymer, polycarbonate (PC), in order to investigate surface hydrophilic property through contact angle measurement. PC was irradiated with N, Ar, and Xe ions at the irradiation energy of 20-50 keV and the dose range of 5x10{sup 15}, 1x10{sup 16}, 7x10{sup 16} ions/cm{sup 2}. The contact angle of water was estimated by means of the sessile drop method and was reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural properties are discussed in view of Furier transform infrared and x-ray photoelectron spectroscopy, which shows increasing C-O bonding and C-C bonding. The surface roughness examined by atomic force microscopy measurement changed smoothly from 3.59 to 2.22 A as the fluence increased. It is concluded that the change in wettability may be caused by surface carbonization and oxidation as well as surface roughness.

  14. Ion implantation of highly corrosive electrolyte battery components

    DOEpatents

    Muller, R.H.; Zhang, S.

    1997-01-14

    A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, and sodium sulfur. 6 figs.

  15. Ion implantation of highly corrosive electrolyte battery components

    DOEpatents

    Muller, Rolf H.; Zhang, Shengtao

    1997-01-01

    A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, end sodium sulfur.

  16. Ion implantation induced blistering of rutile single crystals

    NASA Astrophysics Data System (ADS)

    Xiang, Bing-Xi; Jiao, Yang; Guan, Jing; Wang, Lei

    2015-07-01

    The rutile single crystals were implanted by 200 keV He+ ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He+ ion implantation with appropriate fluence and the following thermal annealing.

  17. Ion irradiation of 37Cl implanted nuclear graphite: Effect of the energy deposition on the chlorine behavior and consequences for the mobility of 36Cl in irradiated graphite

    NASA Astrophysics Data System (ADS)

    Toulhoat, N.; Moncoffre, N.; Bérerd, N.; Pipon, Y.; Blondel, A.; Galy, N.; Sainsot, P.; Rouzaud, J.-N.; Deldicque, D.

    2015-09-01

    Graphite is used in many types of nuclear reactors due to its ability to slow down fast neutrons without capturing them. Whatever the reactor design, the irradiated graphite waste management has to be faced sooner or later regarding the production of long lived or dose determining radioactive species such as 14C, 3H or 36Cl. The first carbon dioxide cooled, graphite moderated nuclear reactors resulted in a huge quantity of irradiated graphite waste for which the management needs a previous assessment of the radioactive inventory and the radionuclide's location and speciation. As the detection limits of usual spectroscopic methods are generally not adequate to detect the low concentration levels (<1 ppm) of the radionuclides, we used an indirect approach based on the implantation of 37Cl, to simulate the presence of 36Cl. Our previous studies show that temperature is one of the main factors to be considered regarding the structural evolution of nuclear graphite and chlorine mobility during reactor operation. However, thermal release of chlorine cannot be solely responsible for the depletion of the 36Cl inventory. We propose in this paper to study the impact of irradiation and its synergetic effects with temperature on chlorine release. Indeed, the collision of the impinging neutrons with the graphite matrix carbon atoms induces mainly ballistic collisions. However, a small part of the recoil carbon atom energy is also transferred to the lattice through electronic excitation. This paper aims at elucidating the effects of the different irradiation regimes (ballistic and electronic) using ion irradiation, on the mobility of implanted 37Cl, taking into account the initial disorder level of the nuclear graphite.

  18. Osteogenic activity and antibacterial effect of zinc ion implanted titanium.

    PubMed

    Jin, Guodong; Cao, Huiliang; Qiao, Yuqin; Meng, Fanhao; Zhu, Hongqin; Liu, Xuanyong

    2014-05-01

    Titanium (Ti) and its alloys are widely used as orthopedic and dental implants. In this work, zinc (Zn) was implanted into oxalic acid etched titanium using plasma immersion ion implantation technology. Scanning electron microscopy and X-ray photoelectron spectroscopy were used to investigate the surface morphology and composition of Zn-implanted titanium. The results indicate that the depth profile of zinc in Zn-implanted titanium resembles a Gaussian distribution, and zinc exists in the form of ZnO at the surface whereas in the form of metallic Zn in the interior. The Zn-implanted titanium can significantly stimulate proliferation of osteoblastic MC3T3-E1 cells as well as initial adhesion, spreading activity, ALP activity, collagen secretion and extracellular matrix mineralization of the rat mesenchymal stem cells. The Zn-implanted titanium presents partly antibacterial effect on both Escherichia coli and Staphylococcus aureus. The ability of the Zn-implanted titanium to stimulate cell adhesion, proliferation and differentiation as well as the antibacterial effect on E. coli can be improved by increasing implantation time even to 2 h in this work, indicating that the content of zinc implanted in titanium can easily be controlled within the safe concentration using plasma immersion ion implantation technology. The Zn-implanted titanium with excellent osteogenic activity and partly antibacterial effect can serve as useful candidates for orthopedic and dental implants. PMID:24632388

  19. Microstructure of Co-doped TiO₂ (110) Rutile by Ion Implantation

    SciTech Connect

    Wang, Chong M.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Droubay, Timothy C.; Chambers, Scott A.

    2005-04-01

    Co-doped rutile TiO₂ was synthesized by injecting Co ions into single crystal rutile TiO₂ using high energy ion implantation. Microstructures of the implanted specimens were studied in detail using high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy (EDS), electron diffraction, and HRTEM image simulations. The spatial distribution and conglomeration behavior of the implanted Co ions, as well as the point defect distributions induced by ion implantation, show strong dependences on implantation conditions. Uniform distribution of Co ions in the rutile TiO₂ lattice was obtained by implanting at 1075 K with a Co ion fluence of 1.25x10¹⁶ Co/cm². Implanting at 875 K leads to the formation of Co metal clusters. The precipitated Co metal clusters and surrounding TiO₂ matrix exhibit the orientation relationships Co<110>//TiO₂[001] and Co{111}//TiO₂(110). A structural model representing the interface between Co metal clusters and TiO₂ is developed based on HRTEM imaging and image simulations.

  20. Microstructure of Co-doped TiO{sub 2}(110) rutile by ion implantation

    SciTech Connect

    Wang, C.M.; Shutthanandan, V.; Thevuthasan, S.; Droubay, T.; Chambers, S.A.

    2005-04-01

    Co-doped rutile TiO{sub 2} was synthesized by injecting Co ions into single crystal rutile TiO{sub 2} using high energy ion implantation. Microstructures of the implanted specimens were studied in detail using high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy, electron diffraction, and HRTEM image simulations. The spatial distribution and conglomeration behavior of the implanted Co ions, as well as the point defect distributions induced by ion implantation, show strong dependences on implantation conditions. Uniform distribution of Co ions in the rutile TiO{sub 2} lattice was obtained by implanting at 1075 K with a Co ion fluence of 1.25x10{sup 16} Co/cm{sup 2}. Implanting at 875 K leads to the formation of Co metal clusters. The precipitated Co metal clusters and surrounding TiO{sub 2} matrix exhibit the orientation relationships Co<110> parallel TiO{sub 2}[001] and Co{l_brace}111{r_brace} parallel TiO{sub 2}(110). A structural model representing the interface between Co metal clusters and TiO{sub 2} is developed based on HRTEM imaging and image simulations.

  1. Integration of Ion Implantation with Scanning ProbeAlignment

    SciTech Connect

    Persaud, A.; Rangelow, I.W.; Schenkel, T.

    2005-03-01

    We describe a scanning probe instrument which integrates ion beams with imaging and alignment functions of a piezo resistive scanning probe in high vacuum. Energetic ions (1 to a few hundred keV) are transported through holes in scanning probe tips [1]. Holes and imaging tips are formed by Focused Ion Beam (FIB) drilling and ion beam assisted thin film deposition. Transport of single ions can be monitored through detection of secondary electrons from highly charged dopant ions (e. g., Bi{sup 45+}) enabling single atom device formation. Fig. 1 shows SEM images of a scanning probe tip formed by ion beam assisted Pt deposition in a dual beam FIB. Ion beam collimating apertures are drilled through the silicon cantilever with a thickness of 5 {micro}m. Aspect ratio limitations preclude the direct drilling of holes with diameters well below 1 {micro}m, and smaller hole diameters are achieved through local thin film deposition [2]. The hole in Fig. 1 was reduced from 2 {micro}m to a residual opening of about 300 nm. Fig. 2 shows an in situ scanning probe image of an alignment dot pattern taken with the tip from Fig. 1. Transport of energetic ions through the aperture in the scanning probe tip allows formation of arbitrary implant patterns. In the example shown in Fig. 2 (right), a 30 nm thick PMMA resist layer on silicon was exposed to 7 keV Ar{sup 2+} ions with an equivalent dose of 10{sup 14} ions/cm{sup 2} to form the LBL logo. An exciting goal of this approach is the placement of single dopant ions into precise locations for integration of single atom devices, such as donor spin based quantum computers [3, 4]. In Fig. 3, we show a section of a micron size dot area exposed to a low dose (10{sup 11}/cm{sup 2}) of high charge state dopant ions. The Bi{sup 45+} ions (200 keV) were extracted from a low emittance highly charged ions source [5]. The potential energy of B{sup 45+}, i. e., the sum of the binding energies required to remove the electrons, amounts to 36 ke

  2. Determination of Na acceptor level in Na+ ion-implanted ZnO single crystal

    NASA Astrophysics Data System (ADS)

    Wang, Zheng; Liu, Huibin; He, Haiping; Huang, Jingyun; Chen, Lingxiang; Ye, Zhizhen

    2015-03-01

    Ion implantation was used to dope Na acceptor into ZnO single crystals. With three mixed implantation energies, uniform depth distribution of Na ion in the surface region (~300 nm) of ZnO bulk crystals is achieved. Via post-implantation annealing, a donor-acceptor pair recombination band is identified in the low-temperature photoluminescence spectra, from which the energy level of Na-related acceptor in single crystalline ZnO is estimated to be 300 meV. A p-n junction based on this ZnO-Na layer shows rectifying characteristics, confirming the p-type conductivity.

  3. A commercial plasma source ion implantation facility

    SciTech Connect

    Scheuer, J.T.; Adler, R.A.; Horne, W.G.

    1996-10-01

    Empire Hard Chrome has recently installed commercial plasma source ion implantation (PSU) equipment built by North Star Research Corporation. Los Alamos National Laboratory has assisted in this commercialization effort via two Cooperative Research and Development Agreements to develop the plasma source for the equipment and to identify low-risk commercial PSII applications. The PSII system consists of a 1 m x 1 m cylindrical vacuum chamber with a rf plasma source. The pulse modulator is capable of delivering pulses kV and peak currents of 300 A at maximum repetition rate of 400 Hz. thyratron tube to switch a pulse forming network which is tailored to match the dynamic PSII load. In this paper we discuss the PSII system, process facility, and early commercial applications to production tooling.

  4. Ion-Implanted Diamond Films and Their Tribological Properties

    NASA Technical Reports Server (NTRS)

    Wu, Richard L. C.; Miyoshi, Kazuhisa; Korenyi-Both, Andras L.; Garscadden, Alan; Barnes, Paul N.

    1993-01-01

    This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 microns) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C(+) (m/e = 12) at an ion energy of 160 eV and a fluence of 6.72 x 10(exp 17) ions/sq cm. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10(exp -7)Pa), dry nitrogen and humid air (40% RH) environments. The effects of C(+) ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments.

  5. Metal ion implantation for large scale surface modification

    SciTech Connect

    Brown, I.G.

    1992-10-01

    Intense energetic beams of metal ions can be produced by using a metal vapor vacuum arc as the plasma discharge from which the ion beam is formed. We have developed a number of ion sources of this kind and have built a metal ion implantation facility which can produce repetitively pulsed ion beams with mean ion energy up to several hundred key, pulsed beam current of more than an ampere, and time averaged current of several tens of milliamperes delivered onto a downstream target. We've also done some preliminary work on scaling up this technology to very large size. For example, a 50-cm diameter (2000 cm[sup 2]) set of beam formation electrodes was used to produce a pulsed titanium beam with ion current over 7 amperes at a mean ion energy of 100 key. Separately, a dc embodiment has been used to produce a dc titanium ion beam with current over 600 mA, power supply limited in this work, and up to 6 amperes of dc plasma ion current was maintained for over an hour. In a related program we've developed a plasma immersion method for applying thin metallic and compound films in which the added species is atomically mixed to the substrate. By adding a gas flow to the process, well-bonded compound films can also be formed; metallic films and multilayers as well as oxides and nitrides with mixed transition zones some hundreds of angstroms thick have been synthesized. Here we outline these parallel metal-plasma-based research programs and describe the hardware that we've developed and some of the surface modification research that we've done with it.

  6. Effect of dual ion implantation of calcium and phosphorus on the properties of titanium.

    PubMed

    Krupa, D; Baszkiewicz, J; Kozubowski, J A; Barcz, A; Sobczak, J W; Biliński, A; Lewandowska-Szumieł, M; Rajchel, B

    2005-06-01

    This study is concerned with the effect of dual implantation of calcium and phosphorus upon the structure, corrosion resistance and biocompatibility of titanium. The ions were implanted in sequence, first Ca and then P, both at a dose of 10(17) ions/cm2 at a beam energy of 25 keV. Transmission electron microscopy was used to investigate the microstructure of the implanted layer. The chemical composition of the implanted layer was examined by XPS and SIMS. The corrosion resistance was determined by electrochemical methods in a simulated body fluid (SBF) at a temperature of 37 degrees C. The biocompatibility tests were performed in vitro in a culture of human-derived bone cells (HDBC) in contact with the tested materials. The viability of the cells was determined by an XTT assay and their activity by the measurements of the alkaline phosphatase activity in contact with implanted and non-implanted titanium samples. The in vitro examinations confirmed that, under the conditions prevailing during the experiments, the biocompatibility of Ca + P ion-implanted titanium was satisfactory. TEM results show that the surface layer formed by the Ca + P implantation is amorphous. The corrosion resistance of titanium, examined by the electrochemical methods, appeared to be increased after the Ca + P ion implantation. PMID:15603780

  7. Dopant profile engineering of advanced Si MOSFET's using ion implantation

    NASA Astrophysics Data System (ADS)

    Stolk, P. A.; Ponomarev, Y. V.; Schmitz, J.; van Brandenburg, A. C. M. C.; Roes, R.; Montree, A. H.; Woerlee, P. H.

    1999-01-01

    Ion implantation has been used to realize non-uniform, steep retrograde (SR) dopant profiles in the active channel region of advanced Si MOSFET's. After defining the transistor configuration, SR profiles were formed by dopant implantation through the polycrystalline Si gate and the gate oxide (through-the-gate, TG, implantation). The steep nature of the as-implanted profile was retained by applying rapid thermal annealing for dopant activation and implantation damage removal. For NMOS transistors, TG implantation of B yields improved transistor performance through increased carrier mobility, reduced junction capacitances, and reduced susceptibility to short-channel effects. Electrical measurements show that the gate oxide quality is not deteriorated by the ion-induced damage, demonstrating that transistor reliability is preserved. For PMOS transistors, TG implantation of P or As leads to unacceptable source/drain junction broadening as a result of transient enhanced dopant diffusion during thermal activation.

  8. Neutron activation analysis for reference determination of the implantation dose of cobalt ions

    SciTech Connect

    Garten, R.P.H.; Bubert, H.; Palmetshofer, L.

    1992-05-15

    The authors prepared depth profilling reference materials by cobalt ion implantation at an ion energy of 300 keV into n-type silicon. The implanted Co dose was then determined by instrumental neutron activation analysis (INAA) giving an analytical dynamic range of almost 5 decades and uncertainty of 1.5%. This form of analysis allows sources of error (beam spreading, misalignment) to be corrected. 70 refs., 3 tabs.

  9. Modification of sol-gel coatings by ion implantation

    NASA Astrophysics Data System (ADS)

    Hirashima, Hiroshi; Adachi, Kenji; Imai, Hiroaki

    1994-10-01

    In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared after Ar+ implantation. Dehydration and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed by B+ implantation. However, IR absorption bands attributed to B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

  10. Stoichiometric disturbances in compound semiconductors due to ion implantation

    NASA Technical Reports Server (NTRS)

    Avila, R. E.; Fung, C. D.

    1986-01-01

    A method is developed to calculate the depth distribution of the local stoichiometric disturbance (SD) resulting from ion implantation in binary-compound substrates. The calculation includes first-order recoils considering projected range straggle of projectiles and recoils and lateral straggle of recoils. The method uses tabulated final-range statistics to infer the projectile range distributions at intermediate energies. This approach greatly simplifies the calculation with little compromise on accuracy as compared to existing procedures. As an illustration, the SD profile is calculated for implantation of boron, silicon, and aluminum in silicon carbide. The results for the latter case suggest that the SD may be responsible for otherwise unexplained distortions in the annealed aluminum profile. A comparison with calculations by other investigators using the Boltzmann transport equation shows good agreement.

  11. Surface modification of poly(propylene carbonate) by oxygen ion implantation

    NASA Astrophysics Data System (ADS)

    Zhang, Jizhong; Kang, Jiachen; Hu, Ping; Meng, Qingli

    2007-04-01

    Poly(propylene carbonate) (PPC) was implanted by oxygen ion with energy of 40 keV. The influence of experimental parameters was investigated by varying ion fluence from 1 × 10 12 to 1 × 10 15 ions/cm 2. XPS, SEM, surface roughness, wettability, hardness, and modulus were employed to investigate structure and properties of the as-implanted PPC samples. Eight chemical groups, i.e., carbon, C sbnd H, C sbnd O sbnd C, C sbnd O, O sbnd C sbnd O, C dbnd O, ?, and ? groups were observed on surfaces of the as-implanted samples. The species and relative intensities of the chemical groups changed with increasing ion fluence. SEM images displayed that irradiation damage was related strongly with ion fluence. Both surface-recovering and shrunken behavior were observed on surface of the PPC sample implanted with fluence of 1 × 10 15 ions/cm 2. As increasing ion fluence, the surface roughness of the as-implanted PPC samples increased firstly, reached the maximum value of 159 nm, and finally decreased down the minimum value. The water droplet contact angle of the as-implanted PPC samples changed gradually with fluence, and reached the minimum value of 70° with fluence of 1 × 10 15 ions/cm 2. The hardness and modulus of the as-implanted PPC samples increased with increasing ion fluence, and reached their corresponding maximum values with fluence of 1 × 10 15 ions/cm 2. The experimental results revealed that oxygen ion fluence closely affected surface chemical group, morphology, surface roughness, wettability, and mechanical properties of the as-implanted PPC samples.

  12. Implantation of nitrogen, carbon, and phosphorus ions into metals

    SciTech Connect

    Guseva, M.I.; Gordeeva, G.V.

    1987-01-01

    The application of ion implantation for alloying offers a unique opportunity to modify the chemical composition, phase constitution, and microstructure of the surface layers of metals. The authors studied ion implantation of nitrogen and carbon into the surface layers of metallic targets. The phase composition of the implanted layers obtained on the Kh18N10T stainless steel, the refractory molybdenum alloy TsM-6, niobium, and nickel was determined according to the conventional method of recording the x-ray diffraction pattern of the specimens using monochromatic FeK/sub alpha/-radiation on a DRON-2,0 diffractometer. The targets were bombarded at room temperature in an ILU-3 ion accelerator. The implantation of metalloid ions was also conducted with the targets being bombarded with 100-keV phosphorus ions and 40-keV carbon ions.

  13. Immobilization of extracellular matrix on polymeric materials by carbon-negative-ion implantation

    NASA Astrophysics Data System (ADS)

    Tsuji, Hiroshi; Sommani, Piyanuch; Muto, Takashi; Utagawa, Yoshiyuki; Sakai, Shun; Sato, Hiroko; Gotoh, Yasuhito; Ishikawa, Junzo

    2005-08-01

    Effects of ion implantation into polystyrene (PS), silicone rubber (SR) and poly-L-lactic acid (PLA) have been investigated for immobilization of extracellular matrix. Carbon negative ions were implanted into PS and SR sheets at various energies between 5-30 keV and various doses between 1.0 × 1014-1.0 × 1016 ions/cm2. Contact angles of pure water on C-implanted surfaces of PS and SR were decreased as increase in ion energy and in dose due to formation of functional groups such as OH and C-O. Selective attachment of nerve cells was observed on C-implanted them at 10 keV and 3 × 1015 ions/cm2 after in vitro cell culture of nerve cells of PC-12 h. Neurite outgrowth also extended over the implanted area. After dipping in a serum medium and in a fibronectin solution for 2 h, the detection of N 1s electrons by X-ray induced photoelectron spectroscopic (XPS) revealed a significant distinction of protein adhesion on the implanted area. Thus, immobilization of proteins on surface is used for considering the selective cell-attachment. For PLA, the selective attachment of cells and protein depended on the implantation conditions.

  14. Nonlinear damage effect in graphene synthesis by C-cluster ion implantation

    SciTech Connect

    Zhang Rui; Zhang Zaodi; Wang Zesong; Wang Shixu; Wang Wei; Fu Dejun; Liu Jiarui

    2012-07-02

    We present few-layer graphene synthesis by negative carbon cluster ion implantation with C{sub 1}, C{sub 2}, and C{sub 4} at energies below 20 keV. The small C-clusters were produced by a source of negative ion by cesium sputtering with medium beam current. We show that the nonlinear effect in cluster-induced damage is favorable for graphene precipitation compared with monomer carbon ions. The nonlinear damage effect in cluster ion implantation shows positive impact on disorder reduction, film uniformity, and the surface smoothness in graphene synthesis.

  15. Ion implantation processing of GaN epitaxial layers

    SciTech Connect

    Tan, H.H.; Williams, J.S.; Zou, J.; Cockayne, D.J.H.; Pearton, S.J.; Yuan, C.

    1996-12-31

    Ion implantation induced-damage build up in epitaxial GaN layers grown on sapphire has been analyzed by ion channeling and electron microscopy techniques. The epitaxial layers are extremely resistant to ion beam damage in that substantial dynamic annealing of implantation disorder occurs even at liquid nitrogen temperatures. Amorphous layers can be formed in some cases if the implantation dose is high enough. However, the damage (amorphous or complex extended defects) that is formed is also extremely difficult to remove during annealing and required temperatures in excess of 1,100 C.

  16. Ion-implanted planar-buried-heterostructure diode laser

    DOEpatents

    Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

    1991-01-01

    A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

  17. Dynamics of Faceted Nanoparticles Formation in a Crystalline Matrix During Ion Implantation Processing.

    PubMed

    Li, Kun-Dar

    2016-02-01

    The faceted nanoparticle synthesized by ion implantation, such as Zn, Cu or Ag nanoparticles, is one of the promising materials for the next generation of optical devices. To understand and better control the manufacturing processes of ion implantation, a theoretical model is applied to investigate the formation and evolution of faceted nanoparticles under various experimental conditions of implantation processing. In this study, the mechanisms of the anisotropic interfacial energy and kinetics with different ion distributions are taken into consideration to demonstrate the role of the crystallographic symmetry, ion energy and temperature on the faceted nanoparticles formation in a crystalline matrix. As presented in the numerical results, the morphological shape of the nanoparticles is mainly affected by the crystallographic symmetry, while the distribution of the precipitates is principally determined by the ion energy. For the condition of high-temperature implantation, a high mobility of ions causes the characteristic length of nanostructures to increase and creates a coarsening morphology of nanoparticles. It is attributed to a longer diffusion distance during the nucleation and growth processes. This model can be widely used for the predictions of the nanostructures formation with various ion implantation processes. PMID:27433726

  18. Antibacterial PVD coatings doped with silver by ion implantation

    NASA Astrophysics Data System (ADS)

    Osés, J.; Palacio, J. F.; Kulkarni, S.; Medrano, A.; García, J. A.; Rodríguez, R.

    2014-08-01

    The antibacterial effect of certain metal ions, like silver, has been exploited since antiquity. Obviously, the ways to employ the biocide activity of this element have evolved throughout time and it is currently used in a wide range of clinical applications. The work presented here reports the results of an investigation focused on combining the protective properties of PVD coatings with the biocide property of silver, applied by ion implantation. For this purpose, chromium nitride layers were doped with silver implanted at two different doses (5 × 1016 and 1 × 1017 ion/cm2) at 100 keV of energy and perpendicular incidence. Full characterization of the coatings was performed to determine its topographical and mechanical properties. The concentration profile of Ag was analyzed by GD-OES. The thickness of the layers, nano-hardness, roughness, wear resistance and coefficient of friction were measured. Finally, the anti-bacterial efficacy of the coatings was determined following the JIS Z-2801:2010 Standard. The results provide clear insights into the efficacy of silver for antibacterial purposes, as well as on its influence in the mechanical and tribological behaviour of the coatings matrix.

  19. Surface analytical studies of ion-implanted uni-directionally aligned silicon nitride for tribological applications

    NASA Astrophysics Data System (ADS)

    Nakamura, Naoki; Hirao, Kiyoshi; Yamauchi, Yukihiko

    2004-03-01

    Uni-directionally aligned silicon nitride, which exhibits both high strength and high toughness, was implanted with B +, N +, Si + and Ti + ions at a fluence of 2 × 10 17 ions/cm 2 and an energy of 200 keV. The effect of ion implantation on the surface structure of the uni-directionally aligned silicon nitride has been studied, in terms of surface analyses such as atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray absorption near edge structure (XANES). It was clarified that the ion-implanted layer was amorphized and the implantation profile showed good agreement with that estimated from a TRIM simulation. It was found that BN and TiN were formed in B +- and Ti +-implanted Si 3N 4, respectively. There was a slight difference in ion implantation depth among different structures of Si 3N 4, considered to be due to differences in ion channeling.

  20. Photosensitivity enhancement by H- and He-ion implantation in lead lanthanum zirconate titanate ceramics

    SciTech Connect

    Land, C.E.; Peercy, P.S.

    1980-07-01

    H- and He-ion implantation has been used to increase the photoferroelectric image storage sensitivity of lead lanthanum zirconium titanate ceramics by factors of approx.10 and approx.30, respectively. The increased photosensitivity can be attributed primarily to implantation-produced disorder, which increases the efficiency of carrier photoexcitation and trapping and reduces the exposure energy required to establish nonvolatile space-charge fields. Implantation-induced disorder may also contribute to a substantial increase in photoconductivity in the ion-damaged near-surface region.

  1. Development of vertical compact ion implanter for gemstones applications

    NASA Astrophysics Data System (ADS)

    Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

    2014-08-01

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  2. Measurements and applications of high energy boron implants in silicon

    NASA Astrophysics Data System (ADS)

    La Ferla, A.; Rimini, E.; Carnera, A.; Gasparotto, A.; Ciavola, G.; Ferla, G.

    1991-04-01

    Boron ions were implanted into high resistivity Si wafers at energies in the 15-50 MeV range and doses in the 10 11-10 16 cm -2 range. The distribution of the implanted ions was analyzed by spreading resistance profilometry and for the high fluences by secondary ion mass spectrometry. Some samples were implanted with the beam normal to the wafer surface to study the channeling effect in a pure electronic stopping power regime of slowing down. The experimental measurements of the projected ranges and of the stragglings are compared with calculations based on the usual LSS and Bethe-Bloch formulas for the stopping power. This classic approach justifies quantitatively the distribution for the samples implanted in a random direction. The I- V characteristic of a diode performed by multiple energy boron implants of 15, 22 and 50 MeV is presented. The obtained breakdown voltage, 5 × 10 3 V, represents a possible application of the high energy implants.

  3. Software for goniometer control in the Triple Ion Implantation Facility

    SciTech Connect

    Allen, W.R.

    1994-02-01

    A computer program is described tat controls the goniometer employed in the ion scattering chamber of the Triple Ion Implantation Facility (TIF) in the Metals and Ceramics Division at Oak Ridge National Laboratory. Details of goniometer operation and its incorporation into the ion scattering setup specific to the TIF are also discussed.

  4. Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation

    SciTech Connect

    Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Henderson, D.O.

    1996-06-01

    Nanocrystals of SiGe alloy have been formed inside a SiO{sub 2} matrix by the ion implantation technique. It is demonstrated that the sequence of implantation of Si and Ge ions affects the nanocrystal formation significantly. This is explained by the ion beam mixing effect during sequential implantation. The size distributions of the SiGe nanocrystals can also be controlled by annealing conditions.

  5. Dopant activation in ion implanted silicon by microwave annealing

    SciTech Connect

    Alford, T. L.; Thompson, D. C.; Mayer, J. W.; Theodore, N. David

    2009-12-01

    Microwaves are used as a processing alternative for the electrical activation of ion implanted dopants and the repair of ion implant damage within silicon. Rutherford backscattering spectra demonstrate that microwave heating reduces the damage resulting from ion implantation of boron or arsenic into silicon. Cross-section transmission electron microscopy and selective area electron diffraction patterns demonstrate that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Sheet resistance readings indicate the time required for boron or arsenic electrical activation within implanted silicon. Hall measurements demonstrate the extent of dopant activation after microwave heating of implanted silicon. Physical and electrical characterization determined that the mechanism of recrystallization in arsenic implanted silicon is solid phase epitaxial regrowth. The boron implanted silicon samples did not result in enough lattice damage to amorphize the silicon lattice and resulted in low boron activation during microwave annealing even though recrystallization of the Si lattice damage did take place. Despite low boron activation levels, the level of boron activation in this work was higher than that expected from traditional annealing techniques. The kinetics of microwave heating and its effects on implanted Si are also discussed.

  6. 2D-ACAR Studies on Swift Heavy Ion Si-Implanted GaAs

    NASA Astrophysics Data System (ADS)

    Sivaji, K.; Selvakumar, S.

    Material properties modification by high energy heavy ion implantation is a prospective technology leading to many device fabrications. This technique induces defects and hence the physical properties of the materials are modified. The effects of swift heavy ion implantation induced defects by 120 MeV 28+Si ion implantation and doping in SI-GaAs are presented from the electron momentum distribution (EMD) of vacancy-type defects studied by two-dimensional angular correlation of annihilation radiation (2D-ACAR). The positron trapping due to the influence of high-energy Si- implantation in GaAs (n-type) is compared with the corresponding spectra of SI- GaAs and with Si-doped (n-type) GaAs. The EMD of the implanted sample shows a distinct increased isotropic distribution with a characteristic transform of its structure as evident from the low momentum region compared to the pristine sample. The characteristics of defects created by Si doping and by 120 MeV 28+Si ion implantation of undoped semi-insulating (SI) GaAS are discussed. These results indicate the nature of positron trapping in open volume defects such as vacancy clusters created by implantation.

  7. Characterization of Defects in N-type 4H-SiC After High-Energy N Ion Implantation by RBS-Channeling and Raman Spectroscopy

    SciTech Connect

    Kummari, Venkata C.; Reinert, Tilo; Jiang, Weilin; McDaniel, Floyd D.; Rout, Bibhudutta

    2014-08-01

    Implantation with 1 MeV N ions was performed at room temperature in n-type 4H-SiC(0001) to four implantation fluences (or doses in dpa (displacements per atom) at the damage peak) of 1.5×1013(0.0034), 7.8×1013(0.018), 1.5×1014(0.034), and 7.8×1014(0.18) ions/cm2, respectively. The evolution of disorder was studied using Rutherford backscattering spectrometry in channeling mode (RBS-C) and Raman spectroscopy. The disorder in the Si sub-lattice was found to be less than 10% for the dpa of 0.0034 and 0.0178 and increased to 40% and 60% for the dpa of 0.034 and 0.178 respectively. Raman Spectroscopy was performed using a green laser of wavelength 532 nm as excitation source. The normalized Raman Intensity, In shows disorder of 41%, 69%, 77% and 100% for the dpa of 0.0034, 0.017, 0.034 and 0.178 respectively. In this paper, the characterizations of the defects produced due to the Nitrogen implantation in 4H-SiC are presented and the results are discussed.

  8. The Development and Evolution of Ion Implanters in the Semiconductor Industry

    NASA Astrophysics Data System (ADS)

    Armour, Dave G.

    2008-11-01

    By the end of the 1960's, the development of ion beam systems for isotope separation and materials research had reached the stage at which knowledge bases in the areas of ion beam formation and transport and the physics of atomic collisions in solids made it practical to consider the use of ion implantation as a means of modifying the near surface properties of solid materials. The beam currents and energies available made the technique particularly compatible with the doping requirements of the silicon devices being produced at that time. However, incorporation of the technique into a high volume manufacturing environment required the immediate development of new target handling facilities and improvements in machine reliability. While the manner in which ion implanters have evolved over the past forty years has continued to be dictated by the changing demands of the silicon processing industry, the dramatic reduction in transistor size and the increase in integrated circuit complexity have had significant implications for the qualities of the ion beams themselves, particularly in high current, ultra-low energy applications. Since the first commercial implanters were introduced, highly developed medium current, high current and high energy machines have evolved. In the medium current and high energy sectors, well understood ion optical principles have enabled ingenious and highly effective beam formation and transport systems to be designed. As these machines evolved, extensive studies of the implanted material using ion beam based techniques such as Rutherford backscattering and channelling provided a growing understanding of the fundamental radiation damage and annealing processes that are inevitably associated with the implantation process. For high current machines, particularly those operating in the so-called eV implantation range, beam formation and transport processes become considerably more complex and established ion optical design principles must be

  9. Industrial applications of ion implantation into metal surfaces

    SciTech Connect

    Williams, J.M.

    1987-07-01

    The modern materials processing technique, ion implantation, has intriguing and attractive features that stimulate the imaginations of scientists and technologists. Success of the technique for introducing dopants into semiconductors has resulted in a stable and growing infrastructure of capital equipment and skills for use of the technique in the economy. Attention has turned to possible use of ion implantation for modification of nearly all surface related properties of materials - optical, chemical and corrosive, tribological, and several others. This presentation provides an introduction to fundamental aspects of equipment, technique, and materials science of ion implantation. Practical and economic factors pertaining to the technology are discussed. Applications and potential applications are surveyed. There are already available a number of ion-implanted products, including ball-and-roller bearings and races, punches-and-dies, injection screws for plastics molding, etc., of potential interest to the machine tool industry.

  10. Analytical electron microscopy of precipitates in ion-implanted MgAl{sub 2}O{sub 4} spinel

    SciTech Connect

    Evans, N.D.; Zinkle, S.J.; Bentley, J.

    1994-12-31

    Magnesium aluminate spinel (MgAl{sub 2}O{sub 4}) is being considered as an insulator material within proposed fusion reactors where considerable radiation fields are anticipated. Analytical electron microscopy (AEM) has been used to investigate precipitates within MgAl{sub 2}O{sub 4} spinel following implantation of Al{sup +}, Mg{sup +}, or Fe{sup 2+} ions. Combined diffraction experiments, energy dispersive X-ray spectrometry (EDS), electron energy-loss spectrometry (EELS), and energy-filtered imaging were employed to identify and characterize precipitates observed in the implanted ion region. Diffraction studies suggested these are metallic aluminum colloids, although EELS and energy-filtered images revealed this to be the case only for the Al{sup +} and Mg{sup +} implantations, and not for Fe{sup 2+} ion implantations. Multiple-least-squares (MLS) fitting of EELS spectra was employed to quantify the volume fraction of metallic aluminum when present in the implanted ion region. Energy-filtered images of the implanted ion region clearly show the colloid distribution in the Al{sup +} and Mg{sup +} implanted spinel. Energy-filtered images from the Fe {sup 2+} ion implanted spinel indicate that the features visible in diffraction contrast cannot be associated with either metallic aluminum or iron-rich precipitates.

  11. Metal ion implantation in inert polymers for strain gauge applications

    NASA Astrophysics Data System (ADS)

    Di Girolamo, Giovanni; Massaro, Marcello; Piscopiello, Emanuela; Tapfer, Leander

    2010-10-01

    Metal ion implantation in inert polymers may produce ultra-thin conducting films below the polymer surface. These subsurface films are promising structures for strain gauge applications. To this purpose, polycarbonate substrates were irradiated at room temperature with low-energy metal ions (Cu + and Ni +) and with fluences in the range between 1 × 10 16 and 1 × 10 17 ions/cm 2, in order to promote the precipitation of dispersed metal nanoparticles or the formation of a continuous thin film. The nanoparticle morphology and the microstructural properties of polymer nanocomposites were investigated by glancing-incidence X-ray diffraction and transmission electron microscopy (TEM) measurements. At lower fluences (<5 × 10 16 ions/cm 2) a spontaneous precipitation of spherical-shaped metal nanoparticles occurred below the polymer top-surface (˜50 nm), whereas at higher fluences the aggregation of metal nanoparticles produced the formation of a continuous polycrystalline nanofilm. Furthermore, a characteristic surface plasmon resonance peak was observed for nanocomposites produced at lower ion fluences, due to the presence of Cu nanoparticles. A reduced electrical resistance of the near-surface metal-polymer nanocomposite was measured. The variation of electrical conductivity as a function of the applied surface load was measured: we found a linear relationship and a very small hysteresis.

  12. Microstructure and mechanical properties of Fe alloys ion implanted with Ti and N

    NASA Astrophysics Data System (ADS)

    Folistaedt, D. M.; Knapp, J. A.; Pope, L. E.; Picraux, S. T.

    1985-10-01

    The microstructure resulting when Ti and N are both ion-implanted into pure Fe at room temperature has been examined with ion beam analysis, transmission electron microscopy, and electron energy loss spectroscopy. Precipitates of TiN form within the bcc Fe matrix, in contrast to the amorphous phase which forms when Ti and C are both implanted. For comparison, the microstructure resulting when N alone is implanted into Fe was also examined, and Fe 2N precipitates were observed within the Fe matrix. The surface mechanical properties of 15-5 PH steel which was implanted with both Ti and N were examined with pin-on-disc testing, and the results were interpreted in terms of the microstructures observed in Fe. The modifications produced by Ti + N implantation are the same as observed with other treatments producing hard nitrides or carbides within the iron-based matrix: reduced wear is observed, but not reduced friction.

  13. Deformation characteristics of the near-surface layers of zirconia ceramics implanted with aluminum ions

    NASA Astrophysics Data System (ADS)

    Ghyngazov, S. A.; Vasiliev, I. P.; Frangulyan, T. S.; Chernyavski, A. V.

    2015-10-01

    The effect of ion treatment on the phase composition and mechanical properties of the near-surface layers of zirconium ceramic composition 97 ZrO2-3Y2O3 (mol%) was studied. Irradiation of the samples was carried out by accelerated ions of aluminum with using vacuum-arc source Mevva 5-Ru. Ion beam had the following parameters: the energy of the accelerated ions E = 78 keV, the pulse current density Ji = 4mA / cm2, current pulse duration equal τ = 250 mcs, pulse repetition frequency f = 5 Hz. Exposure doses (fluence) were 1016 и 1017 ion/cm2. The depth distribution implanted ions was studied by SIMS method. It is shown that the maximum projected range of the implanted ions is equal to 250 nm. Near-surface layers were investigated by X-ray diffraction (XRD) at fixed glancing incidence angle. It is shown that implantation of aluminum ions into the ceramics does not lead to a change in the phase composition of the near-surface layer. The influence of implanted ions on mechanical properties of ceramic near-surface layers was studied by the method of dynamic nanoindentation using small loads on the indenter P=300 mN. It is shown that in ion- implanted ceramic layer the processes of material recovery in the deformed region in the unloading mode proceeds with higher efficiency as compared with the initial material state. The deformation characteristics of samples before and after ion treatment have been determined from interpretation of the resulting P-h curves within the loading and unloading sections by the technique proposed by Oliver and Pharr. It was found that implantation of aluminum ions in the near-surface layer of zirconia ceramics increases nanohardness and reduces the Young's modulus.

  14. Ion-implanted high microwave power indium phosphide transistors

    NASA Technical Reports Server (NTRS)

    Biedenbender, Michael D.; Kapoor, Vik J.; Messick, Louis J.; Nguyen, Richard

    1989-01-01

    Encapsulated rapid thermal annealing (RTA) has been used in the fabrication of InP power MISFETs with ion-implanted source, drain, and active-channel regions. The MISFETs had a gate length of 1.4 microns. Six to ten gate fingers per device, with individual gate finger widths of 100 or 125 microns, were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using Si implants in InP at energies from 60 to 360 keV with doses of (1-560) x 10 to the 12th/sq cm. The implants were activated using RTA at 700 C for 30 sec in N2 or H2 ambients using an Si3N4 encapsulant. The high-power high-efficiency MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1-W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent and output power density 70 percent greater than that of GaAs MESFETs.

  15. Behavior of PET implanted by Ti, Ag, Si and C ion using MEVVA implantation

    NASA Astrophysics Data System (ADS)

    Wu, Yuguang; Zhang, Tonghe; Zhang, Yanwen; Zhang, Huixing; Zhang, Xiaoji; Zhou, Gu

    2001-01-01

    Polyethylene terephthalane (PET) has been modified with Ti, Ag, Si and C ions from a metal vapor arc source (MEVVA). Ti, Ag, Si and C ions were implanted with acceleration voltage 40 kV to fluences ranging from 1×10 16 to 2×10 17 cm -2. The surface of implanted PET darkened with increasing ion dose, when the metal ion dose was greater than 1×10 17 cm -2 the color changed to metallic bright. The surface resistance decreases by 5-6 orders of magnitude with increasing dose. The resistivity is stable after long-term storage. The depth of Ti- and Ag-implanted layer is approximately 150 and 80 nm measured by Rutherford backscattering (RBS), respectively. TEM photos revealed the presence of Ti and Ag nano-meter particles on the surface resulting from the high-dose implantation. Ti and Ag ion implantations improved conductivity and wear resistance significantly. The phase and structural changes were obtained by X-ray diffraction (XRD). It can be seen that nano-meter particles of Ti precipitation, TiO 2 and Ti-carbides have been formed in implanted layer. Nano-hardness of implanted PET has been measured by a nano-indenter. The results show that the surface hardness, modulus and wear resistance could be increased.

  16. Influence of Si ion implantation on structure and morphology of g-C3N4

    NASA Astrophysics Data System (ADS)

    Varalakshmi, B.; Sreenivasulu, K. V.; Asokan, K.; Srikanth, V. V. S. S.

    2016-07-01

    Effect of Si ion implantation on structural and morphological features of graphite-like carbon nitride (g-C3N4) was investigated. g-C3N4 was prepared by using a simple atmospheric thermal decomposition process. The g-C3N4 pellets were irradiated with a Si ion beam of energy 200 keV with different fluencies. Structural, morphological and elemental, and phase analysis of the implanted samples in comparison with the pristine samples was carried out by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) with energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) techniques, respectively. The observations revealed that Si ion implantation results in a negligible change in the crystallite size and alteration of the network-like to the sheet-like morphology of g-C3N4 and Si ions in the g-C3N4 network.

  17. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    NASA Astrophysics Data System (ADS)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

    2015-11-01

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm-2 to 1 × 1016 cm-2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  18. Modification of the optical spectra of glass by metal ion implantation

    NASA Astrophysics Data System (ADS)

    Yao, X. Y.; Fojas, P. B.; Brown, I. G.; Rubin, M. D.

    1993-06-01

    We have carried out some exploratory investigations of the effect of metal ion implantation on the optical transmission characteristics of glass. The implants were done using the vacuum-arc-based high current metal ion implantation facility developed at Berkeley. The implanted doses were from 3 × 10 16 to 1 × 10 17 cm -2 and the energy was mostly 60 keV. A range of different metal ion species was used, including C, Al, Si, Ti, Fe, Ni, Cu, Y, Ag, Pt and Au. We used soda lime-silica glass (window glass), boron-silica glass (microscope slides), and tin oxide coated glass. The transmission of the glass samples to optical radiation in the wavelength range 300 to 2400 nm was measured. Here we outline the procedure and describe the results of the optical transmission measurements.

  19. Voltage dependence of cluster size in carbon films using plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    McKenzie, D. R.; Tarrant, R. N.; Bilek, M. M. M.; Pearce, G.; Marks, N. A.; McCulloch, D. G.; Lim, S. H. N.

    2003-05-01

    Carbon films were prepared using a cathodic arc with plasma immersion ion implantation (PIII). Using Raman spectroscopy to determine cluster size, a comparison is made between cluster sizes at high voltage and a low duty cycle of pulses with the cluster sizes produced at low voltage and a higher duty cycle. We find that for ion implantation in the range 2-20 kV, the cluster size depends more on implantation energy ( E) than implantation frequency ( f), unlike stress relief, which we have previously shown [M.M.M. Bilek, et al., IEEE Trans. in Plasma Sci., Proceedings 20th ISDEIV 1-5 July 2002, Tours, France, Cat. No. 02CH37331, IEEE, Piscataway, NJ, USA, p. 95] to be dependent on the product Ef. These differences are interpreted in terms of a model in which the ion impacts create thermal spikes.

  20. Effect of 200 keV argon ion implantation on refractive index of polyethylene terepthlate (PET)

    NASA Astrophysics Data System (ADS)

    Kumar, Rajiv; Chawla, Mahak; Rubi, Sharma, Annu; Aggarwal, Sanjeev; Kumar, Praveen; Kanjilal, D.

    2012-06-01

    In the present work, the effect of argon ion implantation has been studied on the refractive index of PET. The specimens were implanted at 200 keV with argon ions in the fluence range of 1×1015 to 1×1017 ions cm-2. The refractive indices have been found to increase with implantation dose and wavelength (in visible region) obtained by using UV-visible spectroscopy. Also a drastic decrease in optical band gap (from 3.63 eV to 1.48eV) and increase in Urbach energy (from 0.29 eV to 3.70 eV) with increase in implantation dose has been observed. The possible correlation between the changes observed in the refractive indices and the Urbachenergyhave been discussed.

  1. An Auger Sputter Profiling Study of Nitrogen and Oxygen Ion Implantations in Two Titanium Alloys

    SciTech Connect

    Barton, B. D., Pope, L. E., Wittberg, T. N.

    1989-07-31

    Samples of two titanium alloys, Ti-6A1-4V and Ti-15V-3Cr-3Sn-3A1, were ion implanted with a combination of nitrogen (N+) and oxygen (O+). For each alloy, implantation parameters were chosen to give implanted nitrogen concentrations of approximately 10 or 50 atomic percent, from a depth of 100 nanometers to a depth of 400 nanometers. In all but one case, dual energy (200 keV and 90 keV) implantations of nitrogen were used to give a relatively uniform nitrogen concentration to a depth of 300 nanometers. In each case, oxygen was implanted at 35 keV, following the nitrogen implantation, to give an oxygen-enriched region near the surface. The implanted samples were then examined by Auger electron spectroscopy (AES) combined with argon ion sputtering. In order to determine the stoichiometry of the nitrogen implanted regions, it was necessary to determine the N (KVV) contribution to the overlapping N (KVV) and Ti (LMM) Auger transitions. It was also necessary to correct for the ion-bombardment-induced compositional changes which have been described in an earlier study of titanium nitride thin films. The corrected AES depth profiles were in good agreement with theoretical predictions.

  2. Electrical measurements on ion-implanted LPCVD polycrystalline silicon films

    NASA Astrophysics Data System (ADS)

    Huang, Ruey-Shing; Cheng, Chin-Hsiung; Liu, J. C.; Lee, M. K.; Chen, C. T.

    1983-07-01

    The electrical conduction properties of ion implanted polycrystalline silicon films have been studied. The polysilicon films were deposited by pyrolysis of silane at 647°C in LPCVD system onto oxide-coated silicon wafers to a thickness of 0.6 μm. Dopants were itroducd by implanting with boron or phosphorus ions, accelerated to 145 keV; doses ranged from 1 × 10 12 cm -2 to 1 × 10 15 cm -2. Film resistivities spanning 8 orders of magnitude were obtained using this doping range. Current-voltage characteristics of polysilicon resistors were measured at temperatures ranging from 24 to 140°C. The associated barrier heights and activation energies were derived. The grain-boundary trapping states density was estimated to be 5 × 10 12 cm -2. We found that both dopant atom segregation and carrier trapping at the grain boundaries play important roles in polysilicon electrical conduction properties. However, within the dose range studies, the dopant atom segragation is most detrimental to the film conductivity for doses < 1 × 10 13 cm -2; as the dose is increased, carrier trapping effects become more pronounced for doses up to 5 × 10 14 cm -2. For doses ⩾ 5 × 10 14 cm -2, conduction due to carriers tunneling through the potential barriers at grain boundaries has to be considered.

  3. Optical imaging and information storage in ion implanted ferroelectric ceramics

    SciTech Connect

    Peercy, P.S.; Land, C.E.

    1981-11-01

    Photographic images can be stored in ferroelectric-phase lead lanthanum zirconate titanate (PLZT) ceramics using a novel photoferroelectric effect. These images are nonvolatile but erasable and can be switched from positive to negative by application of an electric field. We have found that the photosensitivity of ferroelectric PLZT is dramatically improved by ion implantation into the surface exposed to image light. For example, the intrinsic photosensitivity to near-UV light is increased by as much as four orders of magnitude by coimplantation with Ar and Ne. The increased photosensitivity results from implantation-induced decreases in dark conductivity and dielectric constant in the implanted layer. Furthermore, the increased photoferroelectric sensitivity has recently been extended from the near-UV to the visible spectrum by implants of Al and Cr. Ion-implanted PLZT is the most sensitive, nonvolatile, selectively-erasable image storage medium currently known.

  4. Ion implantation for high performance III-V JFETS and HFETS

    SciTech Connect

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-06-01

    Ion implantation has been an enabling technology for realizing many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing for GaAs JFETs (joint field effect transistors), AlGaAs/GaAs HFETs (heterostructure field effect transistors), and InGaP or InAlP-barrier HFETs. The GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs are reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to absence of the deep donor level. An optimized P co- implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

  5. Numerical Simulation Research in Plasma Technologies 4. PIC-MCC Simulation for Plasma Immersion Ion Implantation Processing

    NASA Astrophysics Data System (ADS)

    Miyagawa, Yoshiko

    Plasma Immersion Ion Implantation (PIII) has been developed as a method for high-flux implantation and conformal implantation on a complex shaped target. In PIII, a negative pulsed high voltage is applied to the target immersed in low-pressure high-density plasma. Then an ion sheath is formed around the target and energetic ions are implanted on the target surface. By increasing the plasma density, conformal implantation is possible. However, this process can not be easily realized for a complex shaped target, for instance which has a trench or holes with high aspectratios. In order to find the best condition in the process, it is very important to know the sheath shape around the target and the energy and flux distributions of implanted ions at each surface point. Plasma behavior in the PIII process has been simulated using “PEGASUS”.

  6. Relaxation of strain during solid phase epitaxial growth of Ge + ion implanted layers in silicon

    NASA Astrophysics Data System (ADS)

    Holmén, G.; Songsiriritthigul, Prayoon

    1998-09-01

    Formation of Si 1- xGe x-alloy layers by solid phase epitaxial growth (SPEG) of Ge + ion implanted silicon has been studied. The ion implantations were performed with 40, 100, 150, 200 and 300 keV 74Ge + ions and various ion doses. The SPEG of the ion implanted layers was carried out in a conventional furnace at 850°C for 20 min under a flow of nitrogen gas. The Si 1- xGe x-alloy layers were characterised by Rutherford backscattering spectrometry and transmission electron microscopy (TEM). For a given ion energy, a Si 1- xGe x-alloy layer with no observable extended defects can be manufactured if the ion dose is below a critical value and strain-induced defects are formed in the alloy layer when the ion dose is equal to or above this value. The critical Ge + ion dose increases with ion energy, while the critical maximum Ge concentration decreases. For ion energies ⩽150 keV, the defects observed in the alloy layers are mostly stacking faults parallel to the {1 1 1} planes. For higher ion energies, 200 keV and above, the majority of defects in the alloy layer are hairpin dislocations. In the whole ion energy range, the critical ion dose and the depth position of the nucleation site for the stacking faults obtained from the measurements are in good agreement with theoretical predictions. Extended defects are formed in the alloy layer during the SPEG when the regrowth of the crystalline/amorphous interface has reached the depth position in the crystal where the accumulated strain energy density is equal to the critical value of 235 mJ/m 2.

  7. Ta-ion implantation induced by a high-intensity laser for plasma diagnostics and target preparation

    NASA Astrophysics Data System (ADS)

    Cutroneo, M.; Malinsky, P.; Mackova, A.; Matousek, J.; Torrisi, L.; Slepicka, P.; Ullschmied, J.

    2015-12-01

    The present work is focused on the implantation of Ta ions into silicon substrates covered by a silicon dioxide layer 50-300 nm thick. The implantation is achieved using sub-nanosecond pulsed laser ablation (1015 W/cm2) with the objective of accelerating non-equilibrium plasma ions. The accelerated Ta ions are implanted into the exposed silicon substrates at energies of approximately 20 keV per charge state. By changing a few variables in the laser pulse, it is possible to control the kinetic energy, the yield and the angular distribution of the emitted ions. Rutherford Back-Scattering analysis was performed using 2.0 MeV He+ as the probe ions to determine the elemental depth profiles and the chemical composition of the laser-implanted substrates. The depth distributions of the implanted Ta ions were compared to SRIM 2012 simulations. The evaluated results of energy distribution were compared with online techniques, such as Ion Collectors (IC) and an Ion Energy Analyser (IEA), for a detailed identification of the produced ion species and their energy-to-charge ratios (M/z). Moreover, XPS (X-ray Photon Spectroscopy) and AFM (Atomic Force Microscopy) analyses were carried out to obtain information on the surface morphology and the chemical composition of the modified implanted layers, as these features are important for further application of such structures.

  8. Selective electroless copper plating on silicon seeded by copper ion implantation

    NASA Astrophysics Data System (ADS)

    Bhansali, S.; Sood, D. K.; Zmood, R. B.

    1994-12-01

    We report on the successful use of copper (self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions were implanted into silicon to doses of 5 times 10(exp 14)-6.4 times 10(exp 16) ions\\sq cm using a metal vapour vacuum arc ion implanter at extraction voltages of 10 kV and 20 kV. A copper film was then deposited onto implanted silicon using a commercial electroless plating solution. The ion energy was kept low enough to facilitate a low critical 'seed' threshold dose which was measured to be 2 times 10(exp 15) Cu ions/sq cm. Test patterns were made using polyimide to study the adaptability of this technique to forming thick structures. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy (SEM), profilometry, energy-dispersive X-rays and Auger electron spectroscopy. The adhesion of films was estimated by a 'Scotch tape test'. The adhesion was found to improve with increasing dose. However, thicker films exhibited rather poor adhesion and high internal stress. Detailed examinations of the top and bottom of the film establish that delamination takes place at the amorphous-crystalline interface of the implanted silicon. SEM results show that the films grow first as isolated islands which become larger and eventually coalesce into a continuous film as the plating time is increased.

  9. Investigation of structural and optical properties of Ag nanoclusters formed in Si(100) after multiple implantations of low energies Ag ions and post-thermal annealing at a temperature below the Ag-Si eutectic point

    NASA Astrophysics Data System (ADS)

    Dhoubhadel, Mangal S.; Rout, Bibhudutta; Lakshantha, Wickramaarachchige J.; Das, Sushanta K.; D'Souza, Francis; Glass, Gary A.; McDaniel, Floyd D.

    2014-07-01

    Multiple low energies (78 keV, 68 keV and 58 keV) of Ag ions with different fluences up to 1×1016 atoms/cm2 were sequentially implanted into Si(100) to create a distribution of different sizes and densities of buried metal nanoclusters (NC) at the near-surface layers. These structures have applications in fields involving plasmonics, optical emitters, photovoltaic, and nano-electronics. The dimension, location and concentration of these NCs influence the type of the applications. The implantation profiles were simulated by utilizing the widely used Stopping and Range of Ions in Matter (SRIM) code as well as a dynamic-TRIM code, which accounts for surface sputtering. The implanted samples were subsequently annealed either in a gas mixture of 4% H2 + 96% Ar or in vacuum at a temperature ˜500 °C up to 90 minutes. The annealing was carried out below the eutectic temperature (˜ 841 °C) of Ag-Si to preferentially synthesize Ag NCs in Si rather than silicide. In order to study the size, concentration and distribution of the Ag NCs in Si, the samples were characterized by Rutherford Backscattering Spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) in combination with Ar-ion etching, and Transmission Electron Microscopy (TEM) techniques. The annealed samples showed a preferential distribution of the Ag NCs' sizes up to 10 nm either near the surface region (< 25nm) or at deeper layers (60-80 nm) closer to the interface of the implanted layer with the crystalline Si substrate. Ag NCs of larger diameters (up to 15 nm) were seen in the annealed sample near the peak concentration positions (˜35-55 nm) of the implanted Ag ions. We have investigated the optical absorption properties due to these nano-structures in Si. The multiple energy implanted samples annealed in a gas mixture of 4% H2 + 96% Ar show enhancements in the optical absorption in the visible range.

  10. Plasma Source Ion Implantation of Aluminum and Aluminum Alloys

    NASA Astrophysics Data System (ADS)

    Walter, Kevin Carl

    Three plasma source ion implantation (PSII) schemes applied to three aluminum systems have been studied. Pure aluminum, and aluminum alloys 7075 (Al-Cu-Mg-Zn) and A390 (Al-17Si-Cu-Fe) were (1) argon ion sputter-cleaned and nitrogen-implanted, (2) nitrogen-implanted without sputter -cleaning, and (3) argon-implanted. Nitrogen implantation was performed with the goal of modifying the surface properties by transformation of the surface to aluminum-nitride. Argon implantation was performed with the goal of modifying the surface properties by inducing radiation damage. All implantation schemes were accomplished using a glow discharge mode of the PSII process. Implanted surfaces were investigated using Auger depth profiling and Transmission Electron Microscopy. The profiles indicated a stoichiometric layer, ~ 0.15 μm thick, of AlN on the nitrogen-implanted samples. Electron microscopy confirmed the complete conversion of the aluminum surface to AlN. Knoop microhardness tests showed an increase in surface hardness, especially at low loads. The improvements were independent of prior sputter-cleaning and were approximately equal for the studied aluminum systems. Pin-on-disk wear tests were conducted using a ruby stylus and isopropanol lubrication. Argon implantation decreased the wear resistance of pure aluminum and 7075. Nitrogen implantation improved the wear rates by a factor of ~10 for pure aluminum and 7075. These improvements were independent of prior sputter-cleaning. The coefficient of friction was not significantly influenced by the implantation schemes. Due to a coarse microstructure, tribological tests of ion-implanted A390 were inconclusive. Corrosion studies performed in a 3.5 wt% NaCl solution (seawater) indicated nitrogen implantation gave pure aluminum improved corrosion resistance. The improvement is due to the complete conversion of the aluminum surface to AlN. Because of pre-existing precipitates, the corrosion properties of 7075 and A390 were not