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Sample records for ion-beam assisted silicon

  1. Control of silicon oxynitrides refractive index by reactive-assisted ion beam sputter deposition

    NASA Astrophysics Data System (ADS)

    Ida, Michel; Chaton, Patrick; Rafin, B.

    1994-11-01

    This paper presents the properties of silicon oxynitrides obtained by reactive ion beam sputter deposition: Dual Ion Beam System. Control of refractive index was achieved by adjusting the process parameters as ion beam current, ion beam energy and reactive gas partial pressure of oxygen and nitrogen. The main difficulty was to achieve stoichiometric nitride, it has been shown that energetic ionized nitrogen was needed to obtain silicon nitride. The major parameter, to obtain variable compositions between silica and silicon nitride, was the oxygen partial pressure with a fixed nitrogen partial pressure. Optical constants in the visible range, refractive index and extinction coefficient, have been measured by spectrophotometry and spectroscopic ellipsometry. Stoichiometry, contamination and packing density have been measured by Rutherford Backscattering and Nuclear Reaction Analysis. The correlation between the film composition and optical constants is shown. Various test results indicate that silicon oxynitrides obtained by reactive assisted ion beam sputtering are high quality optical materials. These films are homogeneous isotropic, with a high packing density. The extinction coefficient is in the order of 10-4 after 300 degree(s)C annealing. All values of refractive index between 1.49 and 2.1 can be chosen.

  2. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO xN y) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized.

  3. Crystalline lattice phase-conversion on thin boron nitride films deposited on silicon wafers by an ion beam assisted deposition method

    NASA Astrophysics Data System (ADS)

    Yokota, Katsuhiro; Kimura, Hidekazu; Miyashita, Fumiyoshi

    2007-04-01

    Boron nitride (BN) was deposited on (1 0 0) silicon wafers by using an ion beam assisted deposition system comprised of an electron beam evaporator and a Kaufman ion source. The intensities of XRD-peaks on turbostratic-BN and IR-peaks on hexagonal-BN increased with increasing nitrogen ion beam energy, and decreased after reached a maximum value on a BN film deposited at 2 keV. On the other hand, a XRD-peak on (1 0 0) cubic-BN first was measured on a BN film deposited at 3 keV.

  4. Synthesis of silicon oxynitride by ion beam sputtering and the effects of nitrogen ion-assisted bombardment

    NASA Astrophysics Data System (ADS)

    Lambrinos, M. F.; Valizadeh, R.; Colligon, J. S.

    1997-05-01

    Thin silicon oxynitride (SiO xN y) films were synthesised without substrate heating by means of N 2+ ion-beam sputtering of a silicon nitride target at an energy of 1000 eV in a N 2 and O 2 ambient with and without 200 eV N 2+ ion assistance. Unassisted films were deposited in a controlled O 2 partial pressure ranging from ambient to 5.0 × 10 -3 Pa whereas assisted films were deposited at a fixed O 2 partial pressure of 1.0 × 10 -3 Pa. The O/(O+N) atomic fraction and the SiO xN y asymmetric stretch mode IR absorption peak wavenumber of unassisted films increased almost linearly with increasing O 2 partial pressure, from 0.2 to 1.0 and 860 cm -1 to 1050 cm -1, respectively, while their refractive indices decreased from 1.92 to 1.46. The behaviour of the SiO xN y film refractive index with the SiO 2 fraction has been compared to that predicted by Drude, Lorentz-Lorenz and Bruggeman models under the assumption that the film is a mixture of SiO 2 and Si 3N 4 phases. For a fixed O 2 partial pressure, the O content of the N 2+ ion-assisted films increased with an increase in the N + ion to Si atom arrival ratio from 0 to 3. This increase in O content correlate with changes in the film refractive index and SiO xN y asymmetric stretch mode absorption peak position, from 1.56 to 1.43 and 1014 cm -1 to 1054 cm -1, respectively, indicating that the O/N atomic ratio increases with increasing N + ion to Si atom ratio until film properties consistent with stoichiometric SiO 2 are obtained.

  5. Noble gas incorporation in sputtered and ion beam assisted grown silicon films

    SciTech Connect

    van Veen, A. . Inter-Faculty Reactor Inst.); Greuter, M.J.W.; Niesen, L. . Dept. of Physics); Nielsen, B.; Lynn, K.G. )

    1991-01-01

    Gas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self-interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.

  6. Noble gas incorporation in sputtered and ion beam assisted grown silicon films

    SciTech Connect

    van Veen, A.; Greuter, M.J.W.; Niesen, L.; Nielsen, B.; Lynn, K.G.

    1991-12-31

    Gas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self-interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.

  7. Metal assisted focused-ion beam nanopatterning

    NASA Astrophysics Data System (ADS)

    Kannegulla, Akash; Cheng, Li-Jing

    2016-09-01

    Focused-ion beam milling is a versatile technique for maskless nanofabrication. However, the nonuniform ion beam profile and material redeposition tend to disfigure the surface morphology near the milling areas and degrade the fidelity of nanoscale pattern transfer, limiting the applicability of the technique. The ion-beam induced damage can deteriorate the performance of photonic devices and hinders the precision of template fabrication for nanoimprint lithography. To solve the issue, we present a metal assisted focused-ion beam (MAFIB) process in which a removable sacrificial aluminum layer is utilized to protect the working material. The new technique ensures smooth surfaces and fine milling edges; in addition, it permits direct formation of v-shaped grooves with tunable angles on dielectric substrates or metal films, silver for instance, which are rarely achieved by using traditional nanolithography followed by anisotropic etching processes. MAFIB was successfully demonstrated to directly create nanopatterns on different types of substrates with high fidelity and reproducibility. The technique provides the capability and flexibility necessary to fabricate nanophotonic devices and nanoimprint templates.

  8. Metal assisted focused-ion beam nanopatterning.

    PubMed

    Kannegulla, Akash; Cheng, Li-Jing

    2016-09-01

    Focused-ion beam milling is a versatile technique for maskless nanofabrication. However, the nonuniform ion beam profile and material redeposition tend to disfigure the surface morphology near the milling areas and degrade the fidelity of nanoscale pattern transfer, limiting the applicability of the technique. The ion-beam induced damage can deteriorate the performance of photonic devices and hinders the precision of template fabrication for nanoimprint lithography. To solve the issue, we present a metal assisted focused-ion beam (MAFIB) process in which a removable sacrificial aluminum layer is utilized to protect the working material. The new technique ensures smooth surfaces and fine milling edges; in addition, it permits direct formation of v-shaped grooves with tunable angles on dielectric substrates or metal films, silver for instance, which are rarely achieved by using traditional nanolithography followed by anisotropic etching processes. MAFIB was successfully demonstrated to directly create nanopatterns on different types of substrates with high fidelity and reproducibility. The technique provides the capability and flexibility necessary to fabricate nanophotonic devices and nanoimprint templates. PMID:27479713

  9. Ion-beam-assisted etching of diamond

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

    1985-01-01

    The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

  10. Dual ion beam assisted deposition of biaxially textured template layers

    DOEpatents

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  11. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  12. Hydrogenated amorphous silicon deposited by ion-beam sputtering

    NASA Technical Reports Server (NTRS)

    Lowe, V. E.; Henin, N.; Tu, C.-W.; Tavakolian, H.; Sites, J. R.

    1981-01-01

    Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

  13. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  14. Ion beam figuring of CVD silicon carbide mirrors

    NASA Astrophysics Data System (ADS)

    Gailly, P.; Collette, J.-P.; Frenette, K. Fleury; Jamar, C.

    2004-06-01

    Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms. Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC. Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 μm was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

  15. Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition

    SciTech Connect

    Kim, Jae Kwon; Cha, Kyu Man; Kang, Jung Hyun; Kim, Yong; Yi, Jae-Yel; Chung, Tae Hun; Bark, Hong Jun

    2004-08-30

    We investigate the effect of Ar-ion-beam irradiation during the deposition of SiO{sub x} films by dual-ion-beam deposition system. Ion-beam irradiation effectively increases the oxygen content, x, in SiO{sub x} films indicative of the preferential sputtering of Si phase as compared to SiO{sub 2} phase in SiO{sub x} films. We observe the intense photoluminescence from nonirradiated sample after postdeposition annealing at 1100 deg. C indicating the formation of Si nanocrystals as shown by a cross-sectional transmission electron microscope. However, the increased oxygen content in ion-beam-irradiated sample results in small optical volume of small Si nanocrystals not sufficient for yielding appreciable photoluminescence intensity after postdeposition annealing. The property is utilized for achieving the area-selective formation of Si nanocrytals by inserting a shadow mask in assist ion beam during deposition.

  16. Ion beam lithography with gold and silicon ions

    NASA Astrophysics Data System (ADS)

    Seniutinas, Gediminas; Balčytis, Armandas; Nishijima, Yoshiaki; Nadzeyka, Achim; Bauerdick, Sven; Juodkazis, Saulius

    2016-04-01

    Different ion species deliver a different material sputtering yield and implantation depth, thus enabling focused ion beam (FIB) fabrication for diverse applications. Using newly developed FIB milling with double charged hbox {Au}^{2+} and hbox {Si}^{2+} ions, fabrication has been carried out on Au-sputtered films to define arrays of densely packed nanoparticles supporting optical extinction peaks at visible-IR wavelengths determined by the size, shape, and proximity of nanoparticles. Results are qualitatively compared with hbox {Ga}+ milling. A possibility to use such ion implantation to tailor the etching rate of silicon is also demonstrated.

  17. Integrated simulations for ion beam assisted fast ignition

    NASA Astrophysics Data System (ADS)

    Sakagami, H.; Johzaki, T.; Sunahara, A.; Nagatomo, H.

    2016-03-01

    Although the energy conversion efficiency from the heating laser to fast electrons is high, the coupling efficiency from fast electrons to the core is estimated to be very low due to large divergence angle of fast electrons in fast ignition experiments at ILE, Osaka University. To mitigate this problem, a plastic thin film or low-density foam, which can generate not only proton (H+) but also carbon (C6+) beams, is combined with currently used cone-guided targets and additional core heating by ions is expected. According to integrated simulations, it is found that these ion beams can enhance the core heating by 20∼60% and it shows a possibility of ion beam assisted fast ignition.

  18. Optical absorption of ion-beam sputtered amorphous silicon coatings

    NASA Astrophysics Data System (ADS)

    Steinlechner, Jessica; Martin, Iain W.; Bassiri, Riccardo; Bell, Angus; Fejer, Martin M.; Hough, Jim; Markosyan, Ashot; Route, Roger K.; Rowan, Sheila; Tornasi, Zeno

    2016-03-01

    Low mechanical loss at low temperatures and a high index of refraction should make silicon optimally suited for thermal noise reduction in highly reflective mirror coatings for gravitational wave detectors. However, due to high optical absorption, amorphous silicon (aSi) is unsuitable for being used as a direct high-index coating material to replace tantala. A possible solution is a multimaterial design, which enables exploitation of the excellent mechanical properties of aSi in the lower coating layers. The possible number of aSi layers increases with absorption reduction. In this work, the optimum heat treatment temperature of aSi deposited via ion-beam sputtering was investigated and found to be 450 °C . For this temperature, the absorption after deposition of a single layer of aSi at 1064 nm and 1550 nm was reduced by more than 80%.

  19. Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon

    SciTech Connect

    Spinella, C.; Lombardo, S. ); Campisano, S.U. )

    1990-08-06

    The amorphous to polycrystal transition during Kr ion beam irradiation of chemical vapor deposited silicon layers has been studied in the temperature range 320--480 {degree}C. At each irradiation temperature the average grain diameter increases linearly with the Kr dose, while the grain density remains constant within the experimental accuracy. The growth rate follows a complex behavior which can be described by dynamic defect generation and annihilation. The absolute value of the grain growth rate is equal to that of the ion-assisted epitaxial layer by layer crystallization in the silicon (111) orientation. This result can be related to the crystal grain structure and morphology.

  20. DNA characterization with Ion Beam Sculpted Silicon Nitride Nanopores

    PubMed Central

    Rollings, Ryan C.; McNabb, David S.; Li, Jiali

    2013-01-01

    Solid state nanopores are emerging as robust single molecule electronic measurement devices and as platforms for confining biomolecules for further analysis. The first silicon nitride nanopore to detect individual DNA molecules were fabricated using ion beam sculpting (IBS), a method that uses broad, low energy ion beams to create nanopores with dimensions ranging from 2 to 20 nm. In this chapter, we discuss the fabrication, characterization, and use of IBS sculpted nanopores as well as efficient uses of pClamp and MATLAB software suites for data acquisition and analysis. The fabrication section will cover the repeatability and the pore size limits. The characterization discussion focuses on the geometric properties as measured by low and high resolution transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), and energy filtered TEM (EFTEM). The section on translocation experiments focuses on how to use tools commonly available to the nanopore experimenter to determine whether a pore will be useful for experimentation or if it should be abandoned. A memory efficient method of taking data using Clampex’s event-driven mode and dual channel recording will be presented, followed by an easy to implement multi-threshold event detection and classification method using MATLAB software. PMID:22528259

  1. Evaluation of collagen immobilized to silicon plates by ion beam

    NASA Astrophysics Data System (ADS)

    Yokoyama, Y.; Kobayashi, T.; Iwaki, M.

    2006-01-01

    A study has been made of immobilization of collagen coated on the substrate by ion beam in order to elucidate the effects of ion bombardment on cell adhesion strength. Substrates used were silicon plates, on which 0.3% type-I collagen solution was coated using a spin coater. The collagen-coated silicon was bombarded with 50 keV He+ ions at doses from 1 × 1013 to 1 × 1015 ions/cm2 using a RIKEN TK-100 ion implanter. The collagen-immobilized specimens were mounted on a parallel-plate flow chamber to perform the collagen adhesion tests with a flowing shear stress. Morphological observations of collagen were performed by scanning transmission electron microscopy (STEM). The chemical condition of collagen was detected by X-ray photoelectron spectroscopy (XPS). The collagen layer in the non-bombarded specimen was about 20 nm in thickness. STEM micrographs showed that collagen layer has thinned due to contraction by ion bombardment as the dose increased. After the collagen adhesion test, collagen layer surface with the non-bombarded specimen was peeled off by shear stress. As the dose increased, the detachment of collagen was suppressed. Detachment of collagen was hardly observed for the dose of 1 × 1015 ions/cm2. The XPS results of collagen structures showed that ion bombardment generated new bonds between collagen molecules in the collagen layer. It is concluded that the increase of collagen adhesion at higher doses is due to the ion-beam immobilization of collagen molecules resulting from new bond generation by displaced atoms and excited atoms between collagen molecules in the collagen layer.

  2. Synthesis of silicon nitride films by ion beam enhanced deposition

    NASA Astrophysics Data System (ADS)

    Xianghuai, Liu; Bin, Xue; Zhihong, Zheng; Zuyao, Zhou; Shichang, Zou

    1989-03-01

    Silicon nitride films with stoichiometric ratio of Si 3N 4 have been synthesized by concurrent electron beam evaporation of silicon and bombardment with nitrogen ions. The results show that the component ratio of nitrogen to silicon in IBED silicon nitride films can be controlled and predicted by the atomic arrival rate ratio of nitrogen to silicon. IR measurement shows that the characteristic absorption peak of IBED Si 3N 4 is located at a wavenumber of 840 cm -1. The refractive index ranges from 2.2 to 2.6. RBS, AES, TEM, SEM, ED and spreading resistance measurement were used for investigation of the depth profiles of composition and structure of silicon nitride films synthesized by IBED. An intermixed layer is formed at the interface by the knock on effect, and a silicon enriched layer is observed at the surface region of the film. Normally the films were found to be amorphous, but electron diffraction patterns taken from deposited layer showed a certain crystallinity. The silicon nitride films prepared by IBED have dramatically less oxygen content than that formed by non-ion-assisted deposition.

  3. Crystal-amorphous-silicon interface kinetics under ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Priolo, F.; La Ferla, A.; Spinella, C.; Rimini, E.; Campisano, S. U.; Ferla, G.

    1990-01-01

    Our recent work on ion-beam-assisted epitaxial growth of amorphous Si layers on single crystal substrates is reviewed. The crystallization was induced by a 600 keV Kr2+ beam at a dose rate of 1×1012/cm2 · s. During irradiations the samples were mounted on a resistively heated copper block whose temperature was maintained constant in the range 250-450°C. The planar motion of the crystal-amorphous interface was monitored in situ by dynamic reflectivity measurements. This technique allows the ion-induced growth rate to be measured with a very high precision. We have observed that this growth rate scales linearly with the energy deposited into elastic collisions at the crystal-amorphous interface by the impinging ions. Moreover, the rate shows an Arrhenius temperature dependence with a well defined activation energy of 0.32±0.05 eV. The dependence of this process on substrate orientation and on impurities either dissolved in the amorphous layer or present at very high concentration at the crystal-amorphous interface is also discussed.

  4. Crystal-amorphous-silicon interface kinetics under ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Priolo, F.; La Ferla, A.; Spinella, C.; Rimini, E.; Campisano, S. U.; Ferla, G.

    1989-11-01

    Our recent work on ion-beam-assisted epitaxial growth of amorphous Si layers on single crystal substrates is reviewed. The crystallization was induced by a 600 keV Kr 2+ beam at a dose rate of 1×10 12/cm 2 · s. During irradiations the samples were mounted on a resistively heated copper block whose temperature was maintained constant in the range 250-450°C. The planar motion of the crystal-amorphous interface was monitored in situ by dynamic reflectivity measurements. This technique allows the ion-induced growth rate to be measured with a very high precision. We have observed that this growth rate scales linearly with the energy deposited into elastic collisions at the crystal-amorphous interface by the impinging ions. Moreover, the rate shows an Arrhenius temperature dependence with a well defined activation energy of 0.32±0.05 eV. The dependence of this process on substrate orientation and on impurities either dissolved in the amorphous layer or present at very high concentration at the crystal-amorphous interface is also discussed.

  5. Characterization of CrBN films deposited by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Aouadi, S. M.; Namavar, F.; Tobin, E.; Finnegan, N.; Haasch, R. T.; Nilchiani, R.; Turner, J. A.; Rohde, S. L.

    2002-02-01

    This article reports on the growth and analysis of CrBN nanocrystalline materials using an ion beam assisted deposition process. In addition, this article addresses the utilization of spectroscopic ellipsometry for in situ analysis of ternary nitrides. Coatings, with a total thickness of 1.5±0.2 μm, were deposited at low temperatures (<200 °C) on silicon substrates using ion beam assisted deposition. These coatings were characterized postdeposition using x-ray diffraction (XRD), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), visible-light spectroscopic ellipsometry (VIS-SE), infrared spectroscopic ellipsometry (IR-SE), and nanoindentation. The primary phases in the films were investigated using XRD. The surface morphology and nanocrystalline nature of the coatings (grain size of 5-7 nm) were deduced using AFM. The elemental composition and phase composition of the samples were determined from XPS and AES measurements and were subsequently deduced from the analysis of the VIS-SE data, and these correlated well. XPS, AES, and IR-SE revealed the crystal structure of the BN phase in the ternary compounds. The correlation of the results from these various techniques indicates that in situ SE may be a potential technique to control the growth of ternary nitride coatings in the future. The mechanical properties of the coatings were evaluated using nanohardness testing. The hardness and elastic modulus were measured to be 19-22 GPa and 250-270 GPa, respectively.

  6. Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous silicon

    SciTech Connect

    Priolo, F. ); Spinella, C. ); Rimini, E. )

    1990-03-15

    In this paper we report detailed experimental measurements on the dependence of the ion-beam-induced epitaxial crystallization (IBIEC) of amorphous silicon on dopant concentration. The results show that the presence of B, P, and As dopants enhances IBIEC. In particular a logarithmic relationship between the ion-induced growth rate and dopant concentration is found for all of the impurities. In order to explain this behavior a phenomenological model of IBIEC will also be presented. The model postulates that the same defect is responsible for both thermal and ion-beam annealing. It combines the structural and electronic features of the description proposed by Williams and Elliman for conventional thermal epitaxial growth, with the intracascade approach of Jackson to the ion-assisted regrowth. Defects responsible for IBIEC are identified in kinklike steps formed onto (110) ledges at the crystalline-amorphous interface. These kinks are assumed to be generated thermally within the thermal-spike regime of each collision cascade. After defect generation, then, our approach follows Jackson's as far as the temporal evolution of defects is concerned. The model can account for all of the experimental results previously explained by the Jackson model and, moreover, can account for the doping and orientation dependences of IBIEC. This description is discussed and quantitatively compared with the experimental data.

  7. Fabrication of OSOS cells by neutral ion beam sputtering. [Oxide Semiconductor On Silicon solar cells

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, J. R.

    1976-01-01

    Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

  8. Ripple rotation, pattern transitions, and long range ordered dots on silicon by ion beam erosion

    SciTech Connect

    Ziberi, B.; Frost, F.; Tartz, M.; Neumann, H.; Rauschenbach, B.

    2008-02-11

    The importance of the ion incidence angle in self-organized pattern formation during low energy Xe{sup +} ion beam erosion of silicon is elaborated. By a small step variation of the ion incidence angle, a variety of nanostructured patterns can develop. In this context, the angular distribution of ions within the ion beam is explored as an additional parameter controlling the evolution of the surface topography. Due to a controlled variation of these two parameters, hitherto unknown phenomena are found: (i) formation of rotated ripples, (ii) continuous transitions between patterns, and (iii) long range square ordered dot patter000.

  9. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    SciTech Connect

    Wang, Dandan Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  10. Method for forming metallic silicide films on silicon substrates by ion beam deposition

    DOEpatents

    Zuhr, Raymond A.; Holland, Orin W.

    1990-01-01

    Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

  11. Surface modification of biomedical implants using ion-beam-assisted sputter deposition

    NASA Astrophysics Data System (ADS)

    Ektessabi, A. M.

    1997-05-01

    Hydroxy-apatite (Ca 10(PO 4) 6(OH) 2), owing to its good bioaffinity and enhancement of osseo-integration, is a potential material for coating on dental and orthopedic implants. At present, hydroxy-apatite is coated on metal implants by a plasma-spraying method or is used in its bulk form in reconstruction surgery. In this paper, experimental results are given for preparation of hydroxy-apatite thin films on various biomedical implant materials using ion-beam sputter deposition and ion-beam-assisted sputter deposition methods. By using the ion-beam-assisted sputter deposition method, the adhesion of hydroxy-apatite thin films to substrate has improved significantly and increased to a level comparable to Ti and Al oxide thin films. Relative atomic densities of Ca, P, O and H in hydroxy-apatite thin films were obtained using ion-beam analysis methods such as RBS, RE-RBS, ERDA, and PIXE. The relative concentrations of Ca, and P were affected by assisting-beam density, and stoichiometric films were obtained for certain assisting-beam current densities.

  12. Focused ion beam high resolution grayscale lithography for silicon-based nanostructures

    SciTech Connect

    Erdmanis, M. Tittonen, I.

    2014-02-17

    Nanofabrication techniques providing a fine control over the profile of silicon structures are of great importance for nanophotonics, plasmonics, sensing, micro- and nano fluidics, and biomedical applications. We report on the applicability of focused ion beam for the fine grayscale lithography, which yields surface profiles that are customized at nanoscale. The approach is based on a correlation between the ion beam irradiation dose of inorganic resist and the mask etching rate in the reactive ion etching. An exceptional property of this method is the number of gray tones that are not limited by the resist characteristics. We apply the process to fabricate unique periodic nanostructures with a slope angle varying across the structure and a period as small as 200 nm.

  13. Iodine enhanced focused-ion-beam etching of silicon for photonic applications

    SciTech Connect

    Schrauwen, Jonathan; Thourhout, Dries van; Baets, Roel

    2007-11-15

    Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro- and nanophotonic devices. However, large optical losses due to crystal damage and ion implantation make the devices impractical when the optical mode is confined near the etched region. These losses are shown to be reduced by the local implantation and etching of silicon waveguides with iodine gas enhancement, followed by baking at 300 deg. C. The excess optical loss in the silicon waveguides drops from 3500 to 1700 dB/cm when iodine gas is used, and is further reduced to 200 dB/cm after baking at 300 deg. C. We present elemental and chemical surface analyses supporting that this is caused by the desorption of iodine from the silicon surface. Finally we present a model to extract the absorption coefficient from the measurements.

  14. Micro-contacting of single and periodically arrayed columnar silicon structures by focused ion beam techniques

    SciTech Connect

    Friedrich, F. Herfurth, N.; Teodoreanu, A.-M.; Boit, C.

    2014-06-16

    Micron-sized, periodic crystalline Silicon columns on glass substrate were electrically contacted with a transparent conductive oxide front contact and a focused ion beam processed local back contact. Individual column contacts as well as arrays of >100 contacted columns were processed. Current-voltage characteristics of the devices were determined. By comparison with characteristics obtained from adapted device simulation, the absorber defect density was reconstructed. The contacting scheme allows the fabrication of testing devices in order to evaluate the electronic potential of promising semiconductor microstructures.

  15. Features of silicon-containing coatings deposition from ablation plasma formed by a powerful ion beam

    NASA Astrophysics Data System (ADS)

    Sazonov, R.; Kholodnaya, G.; Ponomarev, D.; Remnev, G.; Khailov, I.

    2014-11-01

    This paper presents the research of features of silicon-containing coatings deposition from ablation plasma, which is formed by a powerful ion beam at the influence on a microsized pressed powder of SiO2. Experimental research have been conducted with a laboratory setup based on a TEMP-4M pulsed ion accelerator in a double-pulse forming mode; the first is negative (300-500 ns, 100-150 kV), and the second is positive (150 ns, 250-300 kV). A beam composition: C+ ions (60-70 %) and protons, the ion current density on the target is 25±5 A/cm2. An electron self-magnetically insulated diode has been used to generate the ion beam in the TEMP-4M accelerator. The properties of obtained silicon-containing films have been analyzed with the help of IR spectroscopy. A surface structure has been studied by the method of scanning electron microscopy.

  16. Ion-beam assisted deposition of thin molybdenum films studied by molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Robbemond, Arie; Thijsse, Barend J.

    1997-05-01

    We report results obtained by molecular dynamics simulation of low energy argon-ion assisted growth of thin molybdenum films (≈ 20 Å). The effects of a single ion impact are discussed, but more particularly we consider film growth from a manufacturing viewpoint and examine the properties of the completed films. Results for ion-beam assisted deposition are compared with those for unassisted growth (i.e. physical vapor deposition). Surface orientation, atomic displacements, surface roughness, sputtering, point defects, and the influence of off-normal atom incidence are discussed.

  17. Ion beam assisted deposition of organic molecules: a physical way to realize OLED structures

    NASA Astrophysics Data System (ADS)

    Moliton, André; Antony, Rémi; Troadec, David; Ratier, Bernard

    2000-05-01

    We demonstrate how the quantum efficiency of an organic light-emitting diode can be improved by a physical way based on the ion beam assisted deposition: the recombination current can be increased by an enhancement of the minority carrier injection while the total current can be decreased by generation of electron traps which reduced the majority current. The quantum efficiency of fluorescence can be also improved by a layer densification with a limitation of the nonradiative centers. As a result, the quantum efficiency of the structure ITO/Helium assisted Alq3/unassisted Alq3/Ca/Al is improved (by around a factor 10) in relation with a virgin structure.

  18. The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching.

    PubMed

    Sievilä, Päivi; Chekurov, Nikolai; Tittonen, Ilkka

    2010-04-01

    Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10(13) ions cm(- 2) has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx. 50 nm, surface layer is found to be durable enough to serve as a mask with a high selectivity of at least 2000:1 between implanted and non-implanted areas. The combined FIB-TMAH process has been used to generate various types of 3D nanostructures including nanochannels separated by thin vertical sidewalls with aspect ratios up to 1:30, ultra-narrow (approx. 25 nm) freestanding bridges and cantilevers, and gratings with a resolution of 20 lines microm(- 1). PMID:20215652

  19. The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

    NASA Astrophysics Data System (ADS)

    Sievilä, Päivi; Chekurov, Nikolai; Tittonen, Ilkka

    2010-04-01

    Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 × 1013 ions cm - 2 has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx. 50 nm, surface layer is found to be durable enough to serve as a mask with a high selectivity of at least 2000:1 between implanted and non-implanted areas. The combined FIB-TMAH process has been used to generate various types of 3D nanostructures including nanochannels separated by thin vertical sidewalls with aspect ratios up to 1:30, ultra-narrow (approx. 25 nm) freestanding bridges and cantilevers, and gratings with a resolution of 20 lines µm - 1.

  20. Polycrystalline InN thin films prepared by ion-beam-assisted filtered cathodic vacuum arc technique

    NASA Astrophysics Data System (ADS)

    Ji, X. H.; Lau, S. P.

    2005-09-01

    We report on the fabrication of indium nitride (InN) thin films on silicon (1 0 0) substrates by radio frequency ion-beam-assisted filtered cathodic vacuum arc technique at low temperature. The effects of nitrogen ion energy on the structural properties of InN films have been investigated by X-ray diffraction and Raman spectroscopy. The InN films exhibit polycrystalline wurtzite structure. At nitrogen ion energy of 100 eV, the film shows preferred (0 0 0 2) orientation. The preferred orientation is changed to ( 1 0 1¯ 1) when the nitrogen ion energy is more than 100 eV. Three Raman-active optical phonons have been clearly identified and assigned to A 1(LO) at ˜588 cm -1, E22 at ˜490 cm -1 and A 1(TO) at ˜449 cm -1 of InN films, which confirmed the hexagonal structure of InN.

  1. Fabrication of Superconducting Mo/Cu Bilayers Using Ion-Beam-Assisted e-Beam Evaporation

    NASA Astrophysics Data System (ADS)

    Jaeckel, Felix T.; Kripps, Kari L.; Morgan, Kelsey M.; Zhang, Shuo; McCammon, Dan

    2016-08-01

    Superconducting/normal metal bilayers with tunable transition temperature are a critical ingredient to the fabrication of high-performance transition edge sensors. Popular material choices include Mo/Au and Mo/Cu, which exhibit good environmental stability and provide low resistivity films to achieve adequate thermal conductivity. The deposition of high-quality Mo films requires sufficient adatom mobility, which can be provided by energetic ions in sputter deposition or by heating the substrate in an e-beam evaporation process. The bilayer T_c depends sensitively on the exact deposition conditions of the Mo layer and the superconducting/normal metal interface. Because the individual contributions (strain, crystalline structure, contamination) are difficult to disentangle and control, reproducibility remains a challenge. Recently, we have demonstrated that low-energy ion-beam-assisted e-beam evaporation offers an alternative route to reliably produce high-quality Mo films without the use of substrate heating. The energy and momentum delivered by the ion beam provides an additional control knob to tune film properties such as resistivity and stress. In this report we describe modifications made to the commercial end-Hall ion source to avoid iron contamination allowing us to produce superconducting Mo films. We show that the ion beam is effective at enhancing the bilayer interface transparency and that bilayers can be further tuned towards reduced T_c and higher conductivity by vacuum annealing.

  2. Fabrication of Superconducting Mo/Cu Bilayers Using Ion-Beam-Assisted e-Beam Evaporation

    NASA Astrophysics Data System (ADS)

    Jaeckel, Felix T.; Kripps, Kari L.; Morgan, Kelsey M.; Zhang, Shuo; McCammon, Dan

    2016-03-01

    Superconducting/normal metal bilayers with tunable transition temperature are a critical ingredient to the fabrication of high-performance transition edge sensors. Popular material choices include Mo/Au and Mo/Cu, which exhibit good environmental stability and provide low resistivity films to achieve adequate thermal conductivity. The deposition of high-quality Mo films requires sufficient adatom mobility, which can be provided by energetic ions in sputter deposition or by heating the substrate in an e-beam evaporation process. The bilayer T_c depends sensitively on the exact deposition conditions of the Mo layer and the superconducting/normal metal interface. Because the individual contributions (strain, crystalline structure, contamination) are difficult to disentangle and control, reproducibility remains a challenge. Recently, we have demonstrated that low-energy ion-beam-assisted e-beam evaporation offers an alternative route to reliably produce high-quality Mo films without the use of substrate heating. The energy and momentum delivered by the ion beam provides an additional control knob to tune film properties such as resistivity and stress. In this report we describe modifications made to the commercial end-Hall ion source to avoid iron contamination allowing us to produce superconducting Mo films. We show that the ion beam is effective at enhancing the bilayer interface transparency and that bilayers can be further tuned towards reduced T_c and higher conductivity by vacuum annealing.

  3. Influence of ion beam assisted deposition parameters on the growth of MgO and CoFeB

    SciTech Connect

    Ferreira, Ricardo; Freitas, Paulo P.; Petrova, Rumyana; McVitie, Stephen

    2012-04-01

    The effect of the kinetic parameters of an assistance ion beam on the crystallization of ion beam deposited MgO was investigated. It is shown that the crystallization of MgO in the as-deposited state is strongly dependent on the assistance beam parameters. Furthermore, two deposition regimes corresponding to different ranges of the assistance beam energy are found. XRD and TEM studies of CoFeB/MgO/CoFeB with MgO deposited in the two regimes show that CoFeB crystallization is favored when low energy assist beams are used, despite no differences being found in the MgO.

  4. Ion beam modification of metals

    NASA Astrophysics Data System (ADS)

    Dearnaley, G.

    1990-04-01

    Energetic ions beams may be used in various ways to modify and so improve the tribological properties of metals. These methods include: — ion implantation of selected additive species; — ion beam mixing of thin deposited coatings; — ion-beam-assisted deposition of thicker overlay coatings. The first of these techniques has been widely used to modify the electronic properties of semiconductors, but has since been extended for the treatment of all classes of material. Tool steels can be strengthened by the ion implantation of nitrogen or titanium, to produce fine dispersions of hard second-phase precipitates. Solid solution strengthening, by combinations of substitutional and interstitial species, such as yttrium and nitrogen, has also been successful. Both ion beam mixing (IBM) and ion-beam-assisted deposition (IBAD) use a combination of coating and ion bombardment. In the first case, the objective is to intermix the coating and substrate by the aid of radiation-enhanced diffusion. In the latter case, the coating is densified and modified during deposition and the process can be continued in order to build up overlay coatings several μm in thickness. The surface can then be tailored, for instance to provide a hard and adherent ceramic such as silicon nitride, boron nitride or titanium nitride. It is an advantage that all the above processes can be applied at relatively low temperatures, below about 200° C, thereby avoiding distortion of precision components. Ion implantation is also being successfully applied for the reduction of corrosion, especially at high temperatures or in the atmosphere and to explore the mechanisms of oxidation. Ion-assisted coatings, being compact and adherent, provide a more substantial protection against corrosion: silicon nitride and boron nitride are potentially useful in this respect. Examples will be given of the successful application of these methods for the surface modification of metals and alloys, and developments in the

  5. Ion-beam mixing in silicon and germanium at low temperatures

    SciTech Connect

    Clark, G.J.; Marwick, A.D.; Poker, D.B.

    1982-01-01

    Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34k and 77k. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7x10/sup 16/ ions cm/sup -2/; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63x10/sup 16/ ions cm/sup -2/. In silicon, Pt markers were found to broaden at about the same rate at 34k and 77k; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34k did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34k, but at 77k only the Al marker broadened; the Si marker did not. The broadening of the markers is ascribed to ballistic mixing, while the cases where no broadening occurred are explicable if diffusion by a defect mechanism transported displaced marker atoms back to traps near their original sites.

  6. Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

    SciTech Connect

    Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward; Vizkelethy, Gyorgy; Abraham, John B. S.; Doyle, Barney L.

    2015-12-01

    In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

  7. Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

    DOE PAGESBeta

    Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward; Vizkelethy, Gyorgy; Abraham, John B. S.; Doyle, Barney L.

    2015-12-01

    In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

  8. ALLIGATOR - An apparatus for ion beam assisted deposition with a broad-beam ion source

    NASA Astrophysics Data System (ADS)

    Wituschek, H.; Barth, M.; Ensinger, W.; Frech, G.; Rück, D. M.; Leible, K. D.; Wolf, G. K.

    1992-04-01

    Ion beam assisted deposition is a versatile technique for preparing thin films and coatings for various applications. Up to now a prototype setup for research purposes has been used in our laboratory. Processing of industrial standard workpieces requires a high current ion source with broad beam and high uniformity for homogeneous bombardment. In this contribution a new apparatus for large area samples will be described. It is named ALLIGATOR (German acronym of facility for ion assisted evaporation on transverse movable or rotary targets). In order to have a wide energy range available two ion sources are used. One delivers a beam energy up to 1.3 keV. The other is suitable for energies from 5 keV up to 40 keV. The ``high-energy'' ion source is a multicusp multiaperture source with 180-mA total current and a beam diameter of 280 mm at the target position.

  9. Properties of depth-profile controlled boron nitride films prepared by ion-beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Kumagai, M.; Suzuki, M.; Suzuki, T.; Tanaka, Y.; Setsuhara, Y.; Miyake, S.; Ogata, K.; Kohata, M.; Higeta, K.; Einishi, T.; Suzuki, Y.; Shimoitani, Y.; Motonami, Y.

    1997-05-01

    Boron nitride films were prepared by vapor deposition of boron and simultaneous bombardment with mixed gas ions of nitrogen and argon in the energy range of 0.2 to 20 keV. The films were prepared on various kinds of substrates including silicon wafers, tungsten carbide plates and various ceramic plates at a temperature of 400°C. In the synthesis of the BN films, a boron-rich buffer layer between the substrate and the BN film was formed by energetic nitrogen ion beam bombardment, improving tribological properties such as the depth-profile controlled layer. The buffer layer improved film adhesion, and chemical stability, thermal stability at elevated temperature and corrosion resistance of the BN films also gave good results.

  10. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  11. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-04-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  12. Ion-beam sputtered amorphous silicon films for cryogenic precision measurement systems

    NASA Astrophysics Data System (ADS)

    Murray, Peter G.; Martin, Iain W.; Craig, Kieran; Hough, James; Robie, Raymond; Rowan, Sheila; Abernathy, Matt R.; Pershing, Teal; Penn, Steven

    2015-09-01

    Thermal noise resulting from the mechanical loss of multilayer dielectric coatings is expected to impose a limit to the sensitivities of precision measurement systems used in fundamental and applied science. In the case of gravitational wave astronomy, future interferometric gravitational wave detectors are likely to operate at cryogenic temperatures to reduce such thermal noise and ameliorate thermal loading effects, with the desirable thermomechanical properties of silicon making it an attractive mirror substrate choice for this purpose. For use in such a precision instrument, appropriate coatings of low thermal noise are essential. Amorphous silicon (a -Si ) deposited by e-beam and other techniques has been shown to have low mechanical loss. However, to date, the levels of mechanical and optical loss for a -Si when deposited by ion-beam sputtering (the technique required to produce amorphous mirrors of the specification for gravitational wave detector mirrors) are unknown. In this paper results from measurements of the mechanical loss of a series of IBS a -Si films are presented which show that reductions are possible in coating thermal noise of a factor of 1.5 at 120 K and 2.1 at 20 K over the current best IBS coatings (alternating stacks of silica and titania-doped tantala), with further reductions feasible under appropriate heat treatments.

  13. Silicon ion irradiation effects on the magnetic properties of ion beam synthesized CoPt phase

    SciTech Connect

    Balaji, S.; Amirthapandian, S.; Panigrahi, B. K.; Mangamma, G.; Kalavathi, S.; Gupta, Ajay; Nair, K. G. M.

    2012-06-05

    Ion beam mixing of Pt/Co bilayers using self ion (Pt{sup +}) beam results in formation of CoPt phase. Upon ion beam annealing the ion mixed samples using 4 MeV Si{sup +} ions at 300 deg. C, diffusion of Co towards the Pt/Co interface is observed. The Si{sup +} ion beam rotates the magnetization of the CoPt phase from in plane to out of plane of the film.

  14. Abrasion resistance of titanium nitride coatings formed on titanium by ion-beam-assisted deposition.

    PubMed

    Sawase, T; Yoshida, K; Taira, Y; Kamada, K; Atsuta, M; Baba, K

    2005-02-01

    To improve the physical properties of the pure titanium surface, thin titanium nitride (TiN) films were deposited by means of ion-beam-assisted deposition. Film structure was confirmed as TiN by X-ray diffraction analysis. Surface hardness and abrasion resistance were significantly improved on TiN-coated specimens. Five combinations of oral hygiene instruments and materials were applied to the specimens as simulations of the oral environment. Treatment with the metal scaler and ultrasonic scaler severely changed the surface features and significantly increased the surface roughness parameters on pure titanium controls, whereas only small scratches and dull undulations were seen on the TiN-coated specimens. Profilometric tracings and scanning electron micrographs demonstrated the improved abrasion resistance of the TiN-coated specimens. PMID:15641983

  15. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Qiang, You; Jiang, Weilin; Burks, Edward C.; Liu, Kai; Namavar, Fereydoon; McCloy, John S.

    2014-11-07

    Iron oxide films were produced using ion-beam-assisted deposition, and Raman spectroscopy and x-ray diffraction indicate single-phase magnetite. However, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite, suggesting greater than normal disorder. Low temperature magnetometry and first-order reversal curve measurements show strong exchange bias, which likely arises from defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples contain grains ∼6 nm, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field.

  16. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Jiang, Weilin; Qiang, You; Burks, Edward; Liu, Kai; Namavar, Fereydoon; Mccloy, John S.

    2014-11-03

    Iron oxide films were deposited onto Si substrates using ion-beam-assisted deposition. The films were ~300 nm thick polycrystalline magnetite with an average crystallite size of ~6 nm. Additionally, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite. However, Raman spectroscopy and x-ray diffraction both indicate that the films are single-phase magnetite. Since no direct evidence of a second phase could be found, exchange bias likely arises due to defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples have such small grains, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field. The high energy deposition process results in an oxygen-rich, argon-containing magnetite film with low temperature exchange bias due to defects at the high concentration of grain boundaries.

  17. Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chang Su; Jo, Sung Jin; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Lee, Se Jong; Kim, Youn Sang

    2007-12-01

    This communication reports on the fabrication of low operating voltage pentacene thin-film transistors with high-k gate dielectrics by ion beam assisted deposition (IBAD). These densely packed dielectric layers by IBAD show a much lower level of leakage current than those created by e-beam evaporation. These results, from the fact that those thin films deposited with low adatom mobility, have an open structure, consisting of spherical grains with pores in between, that acts as a significant path for leakage current. By contrast, our results demonstrate the potential to limit this leakage. The field effect mobility, on/off current ratio, and subthreshold slope obtained from pentacene thin-film transistors (TFTs) were 1.14 cm2/V s, 105, and 0.41 V/dec, respectively. Thus, the high-k gate dielectrics obtained by IBAD show promise in realizing low leakage current, low voltage, and high mobility pentacene TFTs.

  18. Two-dimensional silicon-based detectors for ion beam therapy

    NASA Astrophysics Data System (ADS)

    Martišíková, M.; Granja, C.; Jakůbek, J.; Hartmann, B.; Telsemeyer, J.; Huber, L.; Brons, S.; Pospíšil, S.; Jäkel, O.

    2012-02-01

    Radiation therapy with ion beams is a highly precise kind of cancer treatment. As ion beams traverse material, the highest ionization density occurs at the end of their path. Due to this Bragg-peak, ion beams enable higher dose conformation to the tumor and increased sparing of the surrounding tissue, in comparison to standard radiation therapy using high energy photons. Ions heavier than protons offer in addition increased biological effectiveness and lower scattering. The Heidelberg Ion Beam Therapy Center (HIT) is a state-of-the-art ion beam therapy facility and the first hospital-based facility in Europe. It provides proton and carbon ion treatments. A synchrotron is used for ion acceleration. For dose delivery to the patient, narrow pencil-like beams are scanned over the target volume.

  19. Extremely thin silicon ΔE detectors for ion beam analysis

    NASA Astrophysics Data System (ADS)

    Whitlow, Harry J.; Winzell, Thomas; Thungström, Göran

    1998-03-01

    Recent developments in silicon nanotechnology have made feasible the fabrication of ΔE detectors with thickness of 1μm or less. The CHICSi collaboration has been developing thin ΔE detectors for study of reaction products from intermediate energy heavy ion collisions in an ultra high vacuum storage-ring environment. In this paper, we highlight these developments from an ion beam analysis (IBA) viewpoint. The initial part of the paper outlines the characteristics for these detectors for, nuclear reaction analysis (NRA), elastic recoil detection (ERD) using ΔE-E detector telescopes and accelerator mass spectrometry (AMS). Quasi-empirical estimates of the maximum ΔE detector thickness and separating power for the limit of low energy particles (down to 0.1AMeV) reveal that energy straggling is an important limiting factor. Subsequently different methods are presented for fabricating both self-supported and vertically integrated ΔE detectors including recently developed wafer bonding techniques which open up the possibility of producing ΔE-E detector telescopes where the ΔE element is in the hundreds of nm range. Ultimately consideration is given to special requirements for the readout electronics because of the high capacitance presented by the thin ΔE detectors.

  20. Focused Ion Beam Fabrication of Silicon-On Field-Effect Transistors.

    NASA Astrophysics Data System (ADS)

    Mattiussi, Greg Andrew

    N-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) have been fabricated on silicon -on-insulator (SOI) substrates using a Focused Ion Beam (FIB) to pattern the gate and to dope the source and drains. Lightly -doped source (LDS) structures were implemented with the FIB to increase the drain-to-source voltage at which single transistor latch-up occurred. FIB exposure of two electron-beam resists was investigated for lithography of the transistor gate and the device mesas. Vertical resist profiles were achieved for linewidths down to 0.2 μm in width in the case of the negative-tone SAL-601 resist from Shipley Co. Openings in resist as narrow as 0.35 μm were made using the positive-tone P28 resist from OCG Microelectronic Materials. Optimal doses, pre- and post-exposure processing conditions were determined for both resists. Transistors with LDS structures showed higher latching voltages than those without. The magnitude of the increase in latching voltage due to the LDS was a function of body doping level, SOI thickness, and coded gate length. The largest increase was 5.1 V for a 0.8 μm MOSFET fabricated in a 125 nm thick SOI film with a body implant dose of 5.6times10^ {12} B cm^{-2}. Devices fabricated in SOI films of thickness 250 nm showed smaller increases in latching voltage with the LDS than those in 125 nm SOI films.

  1. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer.

    PubMed

    Wang, Andrew; Butte, Manish J

    2014-08-01

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished. PMID:25161320

  2. Physical properties of nitrogenated amorphous carbon films produced by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Rossi, Francois; Andre, Bernard; Veen, A. Van; Mijnarends, P. E.; Schut, H.; Labohm, F.; Delplancke, Marie Paule; Dunlop, Hugh; Anger, Eric

    1994-12-01

    Carbon films with up to 32 at.% N (a-C:N) have been prepared using an ion-beam-assisted magnetron, with an N2(+) beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. Electron energy loss spectroscopy shows that these a-C:N films are mostly graphitic with up to 20% C Sp3 bonding. Rutherford backscattering spectroscopy and neutron depth profiling show that the density goes through a maximum as the average deposited energy per unit depth increases. X-ray photoelectron spectroscopy shows that nitrogen is mostly combined with carbon in triple (C(triple bond)N and double (C=N) bonds. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with deposited energy. These results are consistent with a densification induced by the collisions at low deposited energy, and damage-induced graphitization at high deposited energy values.

  3. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    PubMed Central

    Wang, Andrew; Butte, Manish J.

    2014-01-01

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished. PMID:25161320

  4. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    SciTech Connect

    Wang, Andrew; Butte, Manish J.

    2014-08-04

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished.

  5. Bactericidal and biocompatible properties of TiN/Ag multilayered films by ion beam assisted deposition.

    PubMed

    Zhao, J; Cai, X M; Tang, H Q; Liu, T; Gu, H Q; Cui, R Z

    2009-12-01

    Nanoscale TiN/Ag multilayered films of thickness 500 nm were synthesized on AISI317 stainless steel by ion beam assisted deposition (IBAD) with the modulation period of 4, 5, 6, 7.5, and 12 nm. The bactericidal and biocompatible properties of TiN/Ag multilayered films were investigated through Gram negative E. coli bacteria and L929 cells (mice fibroblast) as well as human umbilical vein endothelial cells (HUVEC). The results show that the TiN/Ag multilayered films with the modulation period of 7.5 nm possess the strongest bactericidal property. The cytotoxicity grade of TiN/Ag multilayered coating with the modulation periods of 7.5 nm, 12 nm is in 0-1 scope, which indicates this film has no cytotoxicity to L929. HUVEC on TiN/Ag multilayered film grows well and shows good cellularity. Auger electronic spectroscopy reveals the relationship between the structure of TiN/Ag multilayered film and the biomedical properties. PMID:18553178

  6. Structural and magnetic studies of thin Fe57 films formed by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Lyadov, N. M.; Bazarov, V. V.; Vagizov, F. G.; Vakhitov, I. R.; Dulov, E. N.; Kashapov, R. N.; Noskov, A. I.; Khaibullin, R. I.; Shustov, V. A.; Faizrakhmanov, I. A.

    2016-08-01

    Thin Fe57 films with the thickness of 120 nm have been prepared on glass substrates by using the ion-beam-assisted deposition technique. X-ray diffraction, electron microdiffraction and Mössbauer spectroscopy studies have shown that as-deposited films are in a stressful nanostructured state containing the nanoscaled inclusions of α-phase iron with the size of ∼10 nm. Room temperature in-plane and out-of-plane magnetization measurements confirmed the presence of the magnetic α-phase in the iron film and indicated the strong effect of residual stresses on magnetic properties of the film as well. Subsequent thermal annealing of iron films in vacuum at the temperature of 450 °C stimulates the growth of α-phase Fe crystallites with the size of up to 20 nm. However, electron microdiffraction and Mössbauer spectroscopic data have shown the partial oxidation and carbonization of the iron film during annealing. The stress disappeared after annealing of the film. The magnetic behaviour of the annealed samples was characterized by the magnetic hysteresis loop with the coercive field of ∼10 mT and the saturation magnetization decreased slightly in comparison with the α-phase Fe magnetization due to small oxidation of the film.

  7. Nonpropulsive applications of ion beams

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied: sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source was used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing was tried with many materials and has a multitude of potential applications.

  8. Physical properties of a-C:N films produced by ion beam assisted deposition

    SciTech Connect

    Rossi, F. ); Andre, B. ); van Veen, A.; Mijnarends, P.E.; Schut, H.; Labohm, F. ); Dunlop, H. ); Delplancke, M.P. ); Hubbard, K. )

    1994-09-01

    Carbon films with up to 32 at. % of nitrogen have been prepared with ion beam assisted magnetron, using a N[sup +][sub 2]/N[sup +] beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. EELS, SXS, XPS, and IR studies show that these a-C:N films are mostly graphitic and have up to 20% [ital sp][sup 3] bonding. Nitrogen is mostly combined with carbon in nitrile (C[equivalent to]N) and imine (C=N) groups. RBS and NDP show that density goes through a maximum as the average damage energy per incoming ion increases. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with average damage energy. These results are consistent with a densification induced by the collisions at low average damage energy values and induced graphitization at higher damage energy values. These results are similar to what is observed for Ar ion assisted deposition of a-C films. The mechanical properties of these films have been studied with a nanoindenter, and it was found that the hardness and Young's modulus go through a maximum as the average damage energy is increased. The maximum of mechanical properties corresponds to the minimum in the void concentration in the film. Tribological studies of the a-C:N show that the friction coefficient obtained against diamond under dynamic loading decreases strongly as the nitrogen composition increases, this effect being more pronounced at low loads.

  9. Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition

    SciTech Connect

    Krause, Matthias; Muecklich, Arndt; Zschornak, Matthias; Wintz, Sebastian; Gemming, Sibylle; Abrasonis, Gintautas; Oates, Thomas W. H.; Luis Endrino, Jose

    2012-07-30

    The influence of assisting low-energy ({approx}50-100 eV) ion irradiation effects on the morphology of C:Ni ({approx}15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic nanoparticles. The momentum transfer from assisting ions results in tilting of the columns in relation to the growing film surface. Complex secondary structures are obtained, in which a significant part of the columns grows under local epitaxy via the junction of sequentially deposited thin film fractions. The influence of such anisotropic film morphology on the optical properties is highlighted.

  10. Interfacial electrical properties of ion-beam sputter deposited amorphous carbon on silicon

    NASA Technical Reports Server (NTRS)

    Khan, A. A.; Woollam, J. A.; Chung, Y.; Banks, B.

    1983-01-01

    Amorphous, 'diamond-like' carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined.

  11. Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Burat, O.; Bouchier, D.; Stambouli, V.; Gautherin, G.

    1990-09-01

    We have studied boron nitride films deposited at room temperature by ion-beam-assisted deposition in an ultrahigh vacuum apparatus, with ion accelerating voltages ranging between 0.25 and 2 kV. By using complementarily in situ Auger electron spectrometry and ex situ nuclear analyses to determine the respective surface and bulk N concentrations in the deposited films, we were able to identify the different phases of the mechanism leading to the nitridation of evaporated boron by nitrogen ions. For low nitrogen/boron flux ratios, the incorporation of nitrogen seems to be only governed by ion implantation, and, with respect to the depth of the deposit, the surface is found largely depleted in nitrogen, while the N-incorporation yield remains close to one whatever the ion energy. Such a behavior is well verified as long as a critical bulk nitrogen concentration close to 5.5×1022 cm-3 has not been achieved. For concentrations greater than this, superstoichiometric material is obtained up to a saturation which corresponds to a bulk N incorporation ranging from 6 to 7×1022 cm-3. Further increase of the N/B flux ratio induces a strong diffusion process from N-rich bulk to N-depleted surface, which results in the nitridation of surface boron atoms and a loss of nitrogen by sputtering or desorption. The density measurements seem to indicate that the synthesized phase is close to h-BN. However, the density of B-rich layers ([N]/[B]≊0.2-0.3) is found to be very close to that calculated for a mixture of pure boron and c-BN. The transparency and microhardness of the synthesized BN have satisfying values for its application as a wear-resistant optical coating, but it is not c-BN.

  12. Cluster ion beam assisted fabrication of metallic nanostructures for plasmonic applications

    NASA Astrophysics Data System (ADS)

    Saleem, Iram; Tilakaratne, Buddhi P.; Li, Yang; Bao, Jiming; Wijesundera, Dharshana N.; Chu, Wei-Kan

    2016-08-01

    We report a high-throughput, single-step method for fabricating rippled plasmonic nanostructure arrays via self-assembly induced by oblique angle cluster ion beam irradiation of metal surfaces. This approach does not require lithographic or chemical processes and has the prominent advantage of possible large surface area coverage and applicability to different starting materials. The polarization dependent plasmonic property of the gold nano-ripple is due to their one dimension structure. The localized plasmon resonance frequency of synthesized nano-ripple arrays is tunable by changing nano-ripple dimensions that can be engineered by changing the cluster ion beam irradiation parameters. In this specific case presented, using 30 keV Ar-gas cluster ion beam, we fabricate gold nano-ripple arrays that show localized plasmon resonance in the visible range through near IR range, tunable by varying cluster ion irradiation fluence.

  13. Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Kim, Chang Su; Jo, Sung Jin; Jeong, Soon Moon; Kim, Woo Jin; Baik, Hong Koo; Lee, Se Jong; Song, Kie Moon

    2005-03-01

    Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ-scan and phgr-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

  14. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Mao, Shoudong; Yang, Hengxiu; Li, Jinlong; Huang, Feng; Song, Zhenlun

    2011-04-01

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar+ ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar+ ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  15. Formation of aluminum films on silicon by ion beam deposition: A comparison with ionized cluster beam deposition

    SciTech Connect

    Zuhr, R.A.; Haynes, T.E.; Galloway, M.D. ); Tanaka, S.; Yamada, A.; Yamada, I. . Ion Beam Engineering Lab.)

    1990-01-01

    The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. In this work, we have studied the formation of such films by IBD with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40{degree} to 300{degree}C and with ion energies from 30 to 120 eV per ion. Completed films were analyzed by ion scattering, x-ray diffraction, scanning electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are compared with results for similar films grown by ICB deposition. 15 refs., 3 figs.

  16. Ion-beam-induced epitaxial crystallization of implanted and chemical vapor deposited amorphous silicon

    NASA Astrophysics Data System (ADS)

    La Ferla, A.; Priolo, F.; Spinella, C.; Rimini, E.; Baroetto, F.; Ferla, G.

    1989-03-01

    The dependence of ion-beam enhanced epitaxial growth of amorphous Si layers on impurities either dissolved in the film or present at the film-substrate interface is considered. In the case of ion implanted layers, electrically active dopants, like B, P, As at concentrations above 1 × 10 20/cm 3, enhance the rate by a factor of 2 with respect to the undoped layer. The enhancement shows also a weak dependence on the dopant concentration. Inert impurities, like Ar, which prevent pure thermal regrowth, do not show any appreciable influence on the ion-beam-induced growth rate. Chemical vapor deposited Si layers with a thin native interfacial oxide layer can also be epitaxially regrown under ion irradiation. A critical fluence is needed before the interfacial oxide breaks down and broadens, allowing the epitaxial crystallization to take place. This process is characterized by an activation energy of 0.44 eV. The complex phenomenon of ion-beam-induced crystallization involves a dynamical interaction between production and annealing of point defects. The presence of electrically active dopants probably influences the lifetime of point defects. Impurities which prevent thermal regrowth are instead dissolved by ballistic effects and/or radiation-enhanced mixing.

  17. Influence of gallium ion beam acceleration voltage on the bend angle of amorphous silicon cantilevers

    NASA Astrophysics Data System (ADS)

    Kozeki, Takahiro; Phan, Hoang-Phuong; Viet Dao, Dzung; Inoue, Shozo; Namazu, Takahiro

    2016-06-01

    This paper describes a plastic reshaping technique for Si thin membranes by using focused ion beam (FIB) processing. FIB is used to locally pattern and implant Ga ions into the membranes. The combination of Ga ion doping and alkali wet etching enables us to fabricate nanometer-thick Ga-ion-doped amorphous Si membranes, which can be bent upward at arbitrary angle by controlling the FIB beam irradiation condition. The bending mechanism is discussed in the light of Ga ions implanted depth from the membrane surface. By using this technique, a micrometer-sized chute structure with several different angles is produced.

  18. Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

    SciTech Connect

    Margarone, D.; Prokupek, J.; Rus, B.; Krasa, J.; Velyhan, A.; Laska, L.; Giuffrida, L.; Torrisi, L.; Picciotto, A.; Nowak, T.; Musumeci, P.; Mocek, T.; Ullschmied, J.

    2011-05-15

    Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

  19. Ion beam-assisted deposition of boron nitride from a condensed layer of diborane and ammonia at 78 K

    SciTech Connect

    Kroczynski, R.J.; Strongin, D.R.; Ruckman, M.W.; Strongin, M.

    1993-12-31

    This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon ad (2000 eV) deuterated ammonia beams with currents of 600--850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B{sub 2}H{sub 6} and ammonia (NH{sub 3}) or only B{sub 2}H{sub 6}, respectively. The resulting film is shown to be an amorphous BN coating approximately 30 {Angstrom} thick.

  20. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

    SciTech Connect

    Alexandrov, P. A. Demakov, K. D.; Shemardov, S. G.; Kuznetsov, Yu. Yu.

    2013-02-15

    Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

  1. Concentration dependence and interfacial instabilities during ion beam annealing of arsenic-doped silicon

    SciTech Connect

    Priolo, F.; Rimini, E. ); Spinella, C. ); Ferla, G. )

    1990-01-01

    Ion beam induced epitaxy of amorphous Si layers onto {l angle}100{r angle} substrates has been investigated by varying the As concentration. At As concentrations below 4{times}10{sup 18}/cm{sup 3} no rate effect is observed. In the intermediate regime, between 4{times}10{sup 18}/cm{sup 3} and 2{times}10{sup 21}/cm{sup 3}, the growth rate increases linearly with the logarithm of As concentration and reaches a value about a factor of 2 higher than that of intrinsic Si. At concentrations above 2{times}10{sup 21}/cm{sup 3}, the epitaxy experiences a sudden, severe retardation. Finally, at a concentration of {similar to}6{times}10{sup 21}/cm{sup 3}, twins are observed to form.

  2. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    NASA Astrophysics Data System (ADS)

    Ozcan, Ahmet S.; Lavoie, Christian; Alptekin, Emre; Jordan-Sweet, Jean; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-04-01

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  3. Ion-beam irradiation, gene identification, and marker-assisted breeding in the development of low-cadmium rice.

    PubMed

    Ishikawa, Satoru; Ishimaru, Yasuhiro; Igura, Masato; Kuramata, Masato; Abe, Tadashi; Senoura, Takeshi; Hase, Yoshihiro; Arao, Tomohito; Nishizawa, Naoko K; Nakanishi, Hiromi

    2012-11-20

    Rice (Oryza sativa L.) grain is a major dietary source of cadmium (Cd), which is toxic to humans, but no practical technique exists to substantially reduce Cd contamination. Carbon ion-beam irradiation produced three rice mutants with <0.05 mg Cd⋅kg(-1) in the grain compared with a mean of 1.73 mg Cd⋅kg(-1) in the parent, Koshihikari. We identified the gene responsible for reduced Cd uptake and developed a strategy for marker-assisted selection of low-Cd cultivars. Sequence analysis revealed that these mutants have different mutations of the same gene (OsNRAMP5), which encodes a natural resistance-associated macrophage protein. Functional analysis revealed that the defective transporter protein encoded by the mutant osnramp5 greatly decreases Cd uptake by roots, resulting in decreased Cd in the straw and grain. In addition, we developed DNA markers to facilitate marker-assisted selection of cultivars carrying osnramp5. When grown in Cd-contaminated paddy fields, the mutants have nearly undetectable Cd in their grains and exhibit no agriculturally or economically adverse traits. Because mutants produced by ion-beam radiation are not transgenic plants, they are likely to be accepted by consumers and thus represent a practical choice for rice production worldwide. PMID:23132948

  4. Ion-beam nanopatterning of silicon surfaces under codeposition of non-silicide-forming impurities

    NASA Astrophysics Data System (ADS)

    Moon, B.; Yoo, S.; Kim, J.-S.; Kang, S. J.; Muñoz-García, J.; Cuerno, R.

    2016-03-01

    We report experiments on surface nanopatterning of Si targets which are irradiated with 2-keV Ar+ ions impinging at near-glancing incidence, under concurrent codeposition of Au impurities simultaneously extracted from a gold target by the same ion beam. Previous recent experiments by a number of groups suggest that silicide formation is a prerequisite for pattern formation in the presence of metallic impurities. In spite of the fact that Au is known not to form stable compounds with the Si atoms, ripples nonetheless emerge in our experiments with nanometric wavelengths and small amplitudes, and with an orientation that changes with distance to the Au source. We provide results of sample analysis through Auger electron and energy-dispersive x-ray spectroscopies for their space-resolved chemical composition, and through atomic force, scanning transmission electron, and high-resolution transmission microscopies for their morphological properties. We discuss these findings in the light of current continuum models for this class of systems. The composition of and the dynamics within the near-surface amorphized layer that ensues is expected to play a relevant role to account for the unexpected formation of these surface structures.

  5. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    SciTech Connect

    Anglin, Kevin Goodhue, William D.; Swint, Reuel B.; Porter, Jeanne

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  6. Al/Al-N/AlN compositional gradient film synthesized by ion-beam assisted deposition method

    SciTech Connect

    Amamoto, Yoshiki; Uchiyama, Shingo; Watanabe, Yoshihisa; Nakamura, Yoshikazu

    1997-12-01

    Al/Al-N-AlN compositional gradient thin film was deposited on a Si(100) substrate at room temperature by ion-beam assisted deposition method, with a diminishing ion beam current from 1.4 to 0 mA at increments of 0.3 mA in order to gradually decrease the nitrogen to aluminum ratio at the substrate. The gradual Al and AlN variation in composition was shown by the change of the Al/N atomic ratio analyzed by the energy dispersive X-ray spectroscopy (EDX) and the X-ray photoelectron spectroscopy (XPS) in the cross section of the film. The formation of crystalline Al metal and AlN ceramic layer on the Si substrate was revealed by X-ray diffraction (XRD). The cross sectional image taken by high resolution transmission electron microscope (HRTEM) showed a nano-sized crystalline Al-N ceramic material and the flat interface between the Si substrate and the AlN film.

  7. Focused ion beam assisted three-dimensional rock imaging at submicron scale

    SciTech Connect

    Tomutsa, Liviu; Radmilovic, Velimir

    2003-05-09

    Computation of effective flow properties of fluids in porous media based on three dimensional (3D) pore structure information has become more successful in the last few years, due to both improvements in the input data and the network models. Computed X-ray microtomography has been successful in 3D pore imaging at micron scale, which is adequate for many sandstones. For other rocks of economic interest, such as chalk and diatomite, submicron resolution is needed in order to resolve the 3D-pore structure. To achieve submicron resolution, a new method of sample serial sectioning and imaging using Focused Ion Beam (FIB) technology has been developed and 3D pore images of the pore system for diatomite and chalk have been obtained. FIB was used in the milling of layers as wide as 50 micrometers and as thin as 100 nanometers by sputtering of atoms from the sample surface. The focused ion beam, consisting of gallium ions (Ga+) accelerated by potentials of up to 30 kV and currents up to 20,000 pA, yields very clean, flat surfaces in which the pore-grain boundaries appear in high contrast. No distortion of the pore boundaries due to the ion milling is apparent. After each milling step, as a new surface is exposed, an image of the surface is generated. Using secondary electrons or ions, resolutions as high as 10 nm can be obtained. Afterwards, the series of 2D images can be stacked in the computer and, using appropriate interpolation and surface rendering algorithms, the 3D pore structure is reconstructed.

  8. Optical properties of ion beam textured metals. [using copper, silicon, aluminum, titanium and stainless steels

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.; Weigand, A. J.; Mirtich, M. J.

    1977-01-01

    Copper, silicon, aluminum, titanium and 316 stainless steel were textured by 1000 eV xenon ions from an 8 cm diameter electron bombardment ion source. Simultaneously sputter-deposited tantalum was used to facilitate the development of the surface microstructure. Scanning electron microscopy of the ion textured surfaces revealed two types of microstructure. Copper, silicon, and aluminum developed a cone structure with an average peak-to-peak distance ranging from 1 micron for silicon to 6 microns for aluminum. Titanium and 316 stainless steel developed a serpentine ridge structure. The average peak-to-peak distance for both of these materials was 0.5 micron. Spectral reflectance was measured using an integrating sphere and a holraum reflectometer. Total reflectance for air mass 0 and 2, solar absorptance and total emittance normalized for a 425 K black body were calculated from the reflectance measurements.

  9. Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Silva, J. P. B.; Kamakshi, Koppole; Sekhar, K. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, M.; Gomes, M. J. M.

    2016-05-01

    In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current-voltage (I-V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P-V loops with remnant polarization (Pr) of 5.7 μC/cm2 and a coercive electric field (Ec) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.

  10. Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements

    NASA Astrophysics Data System (ADS)

    Xing, Qian; Herbots, N.; Hart, M.; Bradley, J. D.; Wilkens, B. J.; Sell, D. A.; Sell, Clive H.; Kwong, Henry Mark; Culbertson, R. J.; Whaley, S. D.

    2011-06-01

    The water affinity of Si-based surfaces is quantified by contact angle measurement and surface free energy to explain hydrophobic or hydrophilic behavior of silicone, silicates, and silicon surfaces. Surface defects such as dangling bonds, surface free energy including Lewis acid-base and Lifshitz-van der Waals components are discussed. Water nucleation and condensation is further explained by surface topography. Tapping mode atomic force microscopy (TMAFM) provides statistical analysis of the topography of these Si-based surfaces. The correlation of the above two characteristics describes the behavior of water condensation at Si-based surfaces. Surface root mean square roughness increasing from several Å to several nm is found to provide nucleation sites that expedite water condensation visibly for silica and silicone. Hydrophilic surfaces have a condensation pattern that forms puddles of water while hydrophobic surfaces form water beads. Polymer adsorption on these surfaces alters the water affinity as well as the surface topography, and therefore controls condensation on Si-based surfaces including silicone intraocular lens (IOL). The polymer film is characterized by Rutherford backscattering spectrometry (RBS) in conjunction with 4.265 MeV 12C(α, α)12C, 3.045 MeV 16O(α,α)16O nuclear resonance scattering (NRS), and 2.8 MeV elastic recoil detection (ERD) of hydrogen for high resolution composition and areal density measurements. The areal density of hydroxypropyl methylcellulose (HPMC) film ranges from 1018 atom/cm2 to 1019 atom/cm2 gives the silica or silicone surface a roughness of several Å and a wavelength of 0.16±0.02 μm, and prevents fogging by forming a complete wetting layer during water condensation.

  11. Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements

    SciTech Connect

    Xing Qian; Herbots, N.; Hart, M.; Bradley, J. D.; Wilkens, B. J.; Sell, D. A.; Culbertson, R. J.; Whaley, S. D.; Sell, Clive H.; Kwong, Henry Mark Jr.

    2011-06-01

    The water affinity of Si-based surfaces is quantified by contact angle measurement and surface free energy to explain hydrophobic or hydrophilic behavior of silicone, silicates, and silicon surfaces. Surface defects such as dangling bonds, surface free energy including Lewis acid-base and Lifshitz-van der Waals components are discussed. Water nucleation and condensation is further explained by surface topography. Tapping mode atomic force microscopy (TMAFM) provides statistical analysis of the topography of these Si-based surfaces. The correlation of the above two characteristics describes the behavior of water condensation at Si-based surfaces. Surface root mean square roughness increasing from several A ring to several nm is found to provide nucleation sites that expedite water condensation visibly for silica and silicone. Hydrophilic surfaces have a condensation pattern that forms puddles of water while hydrophobic surfaces form water beads. Polymer adsorption on these surfaces alters the water affinity as well as the surface topography, and therefore controls condensation on Si-based surfaces including silicone intraocular lens (IOL). The polymer film is characterized by Rutherford backscattering spectrometry (RBS) in conjunction with 4.265 MeV {sup 12}C({alpha}, {alpha}){sup 12}C, 3.045 MeV {sup 16}O({alpha},{alpha}){sup 16}O nuclear resonance scattering (NRS), and 2.8 MeV elastic recoil detection (ERD) of hydrogen for high resolution composition and areal density measurements. The areal density of hydroxypropyl methylcellulose (HPMC) film ranges from 10{sup 18} atom/cm{sup 2} to 10{sup 19} atom/cm{sup 2} gives the silica or silicone surface a roughness of several A ring and a wavelength of 0.16{+-}0.02 {mu}m, and prevents fogging by forming a complete wetting layer during water condensation.

  12. Biocompatibility and charge injection property of iridium film formed by ion beam assisted deposition.

    PubMed

    Lee, In-Seop; Whang, Chung-Nam; Park, Jong-Chul; Lee, Dong-Hee; Seo, Won-Sun

    2003-06-01

    Iridium thin film formed by electron-beam evaporation with simultaneous bombardment of Ar ion beam was evaluated for a stimulating neural electrode. The electrochemical behavior of as-deposited Ir film on Ni-Ti sample was almost identical to bulk Ir by producing much higher open-circuit corrosion potential and much lower anodic current density than the uncoated Ni-Ti in both 1N sulfuric acid and saline solution. The charge injection capability of Ir film was compared with that of Pt electrode currently used mostly as a stimulating neural electrode. The charge density of Pt was small and unchanged with increasing number of activating cycles in 0.1M H(2)SO(4), whilst the Ir film continuously produced increases in charge density. The charge injection density of Ir film in physiological solution was higher for the more activated sample under the identical stimulating condition. Attachment and proliferation with PC12 cells on Ir-coated CP Ti without applying electrical stimulation was similar to the polished CP Ti. A network of neurons and extending axons were formed on Ir film. PMID:12699658

  13. Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

    NASA Astrophysics Data System (ADS)

    Akhter, Perveen

    In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced

  14. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    NASA Astrophysics Data System (ADS)

    Twardowska, Agnieszka; Rajchel, Boguslaw; Jaworska, Lucyna

    2010-11-01

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti3SiC2 target. In those methods the TiXSiCY coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti3SiC2 compound sample. As sputtering beam the beam of Ar+ ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar+ ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1μm), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti5Si3 and other phases from Ti-Si-C system (TiSi, TiSi2,Ti3SiC2). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 4000C. In the HR mode the spectral resolution was close to 2 cm-1. In Raman spectra peaks at: 152cm-1, 216cm-1, 278cm-1, 311 cm-1, 608cm-1, 691cm-1 were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness HIT and reduced elastic modulus EIT were calculated using Olivier& Pharr method. HIT for coated substrates was in the range 2.7 to 5.3 GPa, EIT was 160 GPa.

  15. Integration of scanning probes and ion beams

    SciTech Connect

    Persaud, A.; Park, S.J.; Liddle, J.A.; Schenkel, T.; Bokor, J.; Rangelow, I.

    2005-03-30

    We report the integration of a scanning force microscope with ion beams. The scanning probe images surface structures non-invasively and aligns the ion beam to regions of interest. The ion beam is transported through a hole in the scanning probe tip. Piezoresistive force sensors allow placement of micromachined cantilevers close to the ion beam lens. Scanning probe imaging and alignment is demonstrated in a vacuum chamber coupled to the ion beam line. Dot arrays are formed by ion implantation in resist layers on silicon samples with dot diameters limited by the hole size in the probe tips of a few hundred nm.

  16. An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum.

    PubMed

    Mach, Jindrich; Samoril, Tomás; Voborný, Stanislav; Kolíbal, Miroslav; Zlámal, Jakub; Spousta, Jirí; Dittrichová, Libuse; Sikola, Tomás

    2011-08-01

    The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (≈10(1) eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10(1) eV and 10(1) nA/cm(2), respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions. PMID:21895238

  17. Hierarchical titania nanostructures prepared with focused ion beam-assisted anodisation of titanium in an aqueous electrolyte

    NASA Astrophysics Data System (ADS)

    Yadav, Pradeep K.; Lemoine, Patrick; Dale, Graham; Hamilton, Jeremy W. J.; Dunlop, Patrick S. M.; Byrne, John A.; Mailley, Pascal; Boxall, Colin

    2015-04-01

    Titania nanostructures have been prepared by anodisation in aqueous solution assisted by focused ion beam (FIB) milling. The structures formed are bi-periodic, a disordered "native" nanotube array, with characteristics similar to those formed by the standard anodisation process and an ordered array of tubes with larger diameters, guided by the positioning of the FIB concave pits. Low kV EDX analysis shows implanted Ga in FIB-treated titanium which is efficiently removed by the anodisation process. Following thermal annealing, the FIB-treated regions also crystallise to the same anatase phase as the native regions. This result is in stark contrast to previous FIB-assisted anodisation studies which only produced nanostructured arrays of native dimensions. This singularity is discussed in terms of the stable FIB-induced crystalline defects which, in an aqueous electrolyte, can result in the growth of a weaker barrier layer and larger tubes. This novel process gave hexagonal and square arrays with tailored cross-sectional dimensions and therefore has potential for the synthesis of novel meta-materials.

  18. Fabrication of single TiO2 nanotube devices with Pt interconnections using electron- and ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Lee, Mingun; Cha, Dongkyu; Huang, Jie; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    Device fabrication using nanostructured materials, such as nanotubes, requires appropriate metal interconnections between nanotubes and electrical probing pads. Here, electron-beam-assisted deposition (EBAD) and ion-beam-assisted deposition (IBAD) techniques for fabrication of Pt interconnections for single TiO2 nanotube devices are investigated. IBAD conditions were optimized to reduce the leakage current as a result of Pt spreading. The resistivity of the IBAD-Pt was about three orders of magnitude less than that of the EBAD-Pt, due to low carbon concentration and Ga doping, as indicated by X-ray photoelectron spectroscopy analysis. The total resistances of single TiO2 nanotube devices with EBAD- or IBAD-Pt interconnections were 3.82 × 1010 and 4.76 × 108 Ω, respectively. When the resistivity of a single nanotube is low, the high series resistance of EBAD-Pt cannot be ignored. IBAD is a suitable method for nanotechnology applications, such as photocatalysis and biosensors.

  19. Ion beam evaluation of silicon carbide membrane structures intended for particle detectors

    NASA Astrophysics Data System (ADS)

    Pallon, J.; Syväjärvi, M.; Wang, Q.; Yakimova, R.; Iakimov, T.; Elfman, M.; Kristiansson, P.; Nilsson, E. J. C.; Ros, L.

    2016-03-01

    Thin ion transmission detectors can be used as a part of a telescope detector for mass and energy identification but also as a pre-cell detector in a microbeam system for studies of biological effects from single ion hits on individual living cells. We investigated a structure of graphene on silicon carbide (SiC) with the purpose to explore a thin transmission detector with a very low noise level and having mechanical strength to act as a vacuum window. In order to reach very deep cavities in the SiC wafers for the preparation of the membrane in the detector, we have studied the Inductive Coupled Plasma technique to etch deep circular cavities in 325 μm prototype samples. By a special high temperature process the outermost layers of the etched SiC wafers were converted into a highly conductive graphitic layer. The produced cavities were characterized by electron microscopy, optical microscopy and proton energy loss measurements. The average membrane thickness was found to be less than 40 μm, however, with a slightly curved profile. Small spots representing much thinner membrane were also observed and might have an origin in crystal defects or impurities. Proton energy loss measurement (also called Scanning Transmission Ion Microscopy, STIM) is a well suited technique for this thickness range. This work presents the first steps of fabricating a membrane structure of SiC and graphene which may be an attractive approach as a detector due to the combined properties of SiC and graphene in a monolithic materials structure.

  20. Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films.

    PubMed

    Karanth, Shivaprasad; Shanbhogue, Ganesh H; Nagendra, C L

    2005-10-10

    Silicon oxynitride thin films are prepared by ion-beam sputtering, and the optical properties and surface chemical composition are studied by spectrophotometric and x-ray photoelectron spectroscopy, respectively. It is seen that the films sputtered by use of nitrogen alone as the sputtering species from a silicon nitride target are completely transparent (k < 0.005) and have a refractive-index dispersion from 1.85 to 1.71 over the visible and near-infrared spectral regions, and the films show distinct spectral lines that are due to silicon, Si(2s), nitrogen, N(1s), and oxygen, O(1s). Sputter deposition of argon and of argon and nitrogen produces silicon-rich silicon oxynitride films that are absorbent and have high refractive indices. These films have a direct electronic transition, with a threshold energy of 1.75 eV. Electron irradiation transforms optically transparent silicon oxynitride films into silicon-rich silicon oxynitride films that have higher refractive indices and are optically absorbing owing to the presence of nonsaturated silicon in the irradiated films. The degradation in current responsivity of silicon photodetectors, under electron irradiation, is within 3% over the wavelength region from 450 to 750 nm, which is entirely due to the degradation of optical properties of silicon oxynitride antireflection coatings. PMID:16237933

  1. Ion-beam-assisted deposition of Au nanocluster/Nb 2O 5 thin films with nonlinear optical properties

    NASA Astrophysics Data System (ADS)

    Cotell, C. M.; Schiestel, S.; Carosella, C. A.; Flom, S.; Hubler, G. K.; Knies, D. L.

    1997-05-01

    Gold nanocluster thin films (˜ 200 nm thickness) consisting of metal clusters ˜ 5 nm in size embedded in a matrix of Nb 2O 5 were deposited by ion beam-assisted deposition (IBAD) by coevaporation of Au and Nb with O 2+ ion bombardment. The microstructure and optical characteristics of these films were examined as-deposited and after annealing at 600°C. Annealing crystallized the amorphous oxide matrix and ripened the nanoclusters. A strong linear absorption at the wavelength of the surface plasmon resonance for Au developed as a result of annealing. The linear optical behavior was modeled using Mie scattering theory. Good agreement was found between the nanocluster sizes predicted by the theory and the particle sizes observed experimentally using transmission electron microscopy (TEM). The nonlinear optical (NLO) properties of the nanocluster films were probed experimentally using degenerate four wave mixing and nonlinear transmission. The wavelength was near the peak of the surface plasmon resonance as measured by VIS/UV spectroscopy. Values of | χxxxx(3)| were 7.3 × 10 -8 and 3.0 × 10 -10 esu for annealed and unannealed samples, respe The dominant mechanism for the nonlinear response was change in dielectric constant due to the generation of a distribution of hot, photoexcited electrons.

  2. High-temperature tribological characteristics of silver and gold coatings on ceramics prepared by ion-beam-assisted deposition

    SciTech Connect

    Erdemir, A.; Erck, R.A.; Fenske, G.R.; Nichols, F.A.

    1992-04-01

    An ion-beam-assisted deposition (IBAD) system was used to deposit silver and gold coatings on polycrystalline {alpha}-alumina (Al{sub 2}O{sub 3}) substrates for tribological studies at temperatures to 400{degrees}C. The wear tests were performed with an oscillating ball-on-flat type of test apparatus as a partial simulation of ring/liner motion and contact geometry in actual engine systems. The test results showed that without a surface coating, both the wear rates and the friction coefficients of Al{sub 2}O{sub 3}/Al{sub 2}O{sub 3} test pairs were quite high, and increased substantially with temperature. In contract, the wear of flats coated with silver and gold was at unmeasurable levels, even after sliding tests of 110,000 passes. The wear of balls (uncoated) sliding against the Ag- and Au-coated flats was reduced by factors of 45 to more than 500 depending on coating type and ambient temperature. The friction coefficients of pairs with an IBAD-Ag or Au coating were in the range of 0.32--0.5.

  3. Optical and structural properties of YF3 thin films prepared by ion-assisted deposition or ion beam sputtering techniques

    NASA Astrophysics Data System (ADS)

    Robic, Jean-Yves; Muffato, Viviane; Chaton, Patrick; Ida, Michel; Berger, M.

    1994-11-01

    The properties of materials in thin films are strongly dependent on the coating techniques and on the technological parameters. We have investigated about some optical and structural properties of YF3 thin films prepared using different energetic techniques: ion assisted deposition (IAD) and ion beam sputtering (IBS). The properties of the thin films obtained by these energetic processes are compared to the properties obtained by classical electron beam evaporation. In classical evaporation, the optical properties in the visible range depend on the temperature of the deposition and on the incidence of the vapor flux. The optical properties are correlated with the density of the films measured by Rutherford backscattering. In the case of IAD, the influence on optical properties, both in the visible and in the infrared range, of some technological parameters (pressure, ion energy and ion density) are illustrated. The refractive index and the extinction coefficient have been obtained by spectrophotometry. Furthermore, we show that IBS may lead to YF3 layers of high density.

  4. Much simplified ion-beam assisted deposition-TiN template for high-performance coated conductors

    NASA Astrophysics Data System (ADS)

    Xiong, J.; Matias, V.; Wang, H.; Zhai, J. Y.; Maiorov, B.; Trugman, D.; Tao, B. W.; Li, Y. R.; Jia, Q. X.

    2010-10-01

    A much simplified template, i.e., two nonsuperconducting layers between the superconducting YBa2Cu3O7-δ (YBCO) and the polycrystalline metal substrate, has been developed for high-performance coated conductors by using biaxially aligned TiN as a seed layer. A combination of a thin TiN (˜10 nm by ion-beam assisted deposition) layer and an epitaxial buffer LaMnO3 layer (˜120 nm) allows us to grow epitaxial YBCO films with values of full width at half-maximum around 3.5° and 1.7° for the ϕ-scan of (103) and rocking curve of (005) YBCO, respectively. The YBCO films grown on electropolished polycrystalline Hastelloy using this two-layer template exhibited a superconducting transition temperature of 89.5 K, a critical current density of 1.2 MA/cm2 at 75.5 K, and an α value (proportional factor of critical current density Jc˜H-α) of around 0.33, indicating a high density of pinning centers and an absence of weak links.

  5. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    NASA Astrophysics Data System (ADS)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (<1° departure) and smooth (2.0 nm root mean square line-edge roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ∼60 nm min‑1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  6. Much simplified ion-beam assisted deposition-TiN template for high-performance coated conductors

    SciTech Connect

    Xiong, J.; Matias, V.; Zhai, J. Y.; Maiorov, B.; Trugman, D.; Jia, Q. X.; Wang, H.; Tao, B. W.; Li, Y. R.

    2010-10-15

    A much simplified template, i.e., two nonsuperconducting layers between the superconducting YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) and the polycrystalline metal substrate, has been developed for high-performance coated conductors by using biaxially aligned TiN as a seed layer. A combination of a thin TiN ({approx}10 nm by ion-beam assisted deposition) layer and an epitaxial buffer LaMnO{sub 3} layer ({approx}120 nm) allows us to grow epitaxial YBCO films with values of full width at half-maximum around 3.5 deg. and 1.7 deg. for the {phi}-scan of (103) and rocking curve of (005) YBCO, respectively. The YBCO films grown on electropolished polycrystalline Hastelloy using this two-layer template exhibited a superconducting transition temperature of 89.5 K, a critical current density of 1.2 MA/cm{sup 2} at 75.5 K, and an {alpha} value (proportional factor of critical current density J{sub c}{approx}H{sup -}{alpha}) of around 0.33, indicating a high density of pinning centers and an absence of weak links.

  7. Visualisation of the ingress of water and dispersion of drugs in a modified hydrosilanised silicone polymer using combined ion beam analysis techniques

    NASA Astrophysics Data System (ADS)

    Jenneson, P. M.; Clough, A. S.; Riggs, P. D.; Sample, I. R.

    1998-08-01

    A combination of the ion beam analysis techniques Nuclear Reaction Analysis (NRA) and Particle Induced X-ray Emission (PIXE) were used to image the ingress of heavy water into a modified hydrosilanised silicone polymer doped with the drug chlorhexidine diacetate. In the drug release system studied chlorine was a unique component of the drug, the polymeric matrix was identified by its silicon component and the diffusing water labelled with deuterium. Areal distribution plots are shown for differing exposure times of the polymer to D 2O. The plots are also statistically analysed to show trends of increasing chlorine/deuterium correlation, silicon/deuterium anti-correlation and a constant silicon/chlorine anti-correlation with respect to time.

  8. Ion-beam sputtering increases solar-cell efficiency

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, R. R.

    1977-01-01

    Ion-beam sputtering, fabrication of oxide-semiconductor-on-silicon (OSOS) solar cells, results in cells of 12% efficiency. Ion-beam sputtering technique is compatible with low-cost continuous fabrication and requires no high-temperature processing.

  9. Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

    NASA Technical Reports Server (NTRS)

    Hartley, F.; Malek, C.; Neogi, J.

    2001-01-01

    The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

  10. Neutralization of space charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays

    SciTech Connect

    Gotoh, Yasuhito; Tsuji, Hiroshi; Taguchi, Shuhei; Ikeda, Keita; Kitagawa, Takayuki; Ishikawa, Junzo; Sakai, Shigeki

    2012-11-06

    Neutralization of space charge on a high-current and low-energy ion beam was attempted to reduce the divergence with an aid of low-energy electrons supplied from silicon based field emitter arrays (Si-FEAs). An argon ion beam with the energy of 500 eV and the current of 0.25 mA was produced by a microwave ion source. The initial beam divergence and the emittance were measured at the entrance of the analysis chamber in order to estimate the intrinsic factors for beam divergence. The current density distribution of the beam after transport of 730 mm was measured by a movable Faraday cup, with and without electron supply from Si-FEAs. A similar experiment was performed with tungsten filaments as an electron source. The results indicated that the electron supply from FEA had almost the same effect as the thermionic filament, and it was confirmed that both electron sources can neutralize the ion beam.

  11. Focused ion beam and electron microscopy characterization of nanosharp tips and microbumps on silicon and metal thin films formed via localized single-pulse laser irradiation

    SciTech Connect

    Moening, Joseph P.; Georgiev, Daniel G.; Lawrence, Joseph G.

    2011-01-01

    Cross-sections of laser fabricated nanosharp tips and microbumps on silicon and metal thin films are produced and examined in this work. These structures are formed with a Q-switched neodymium doped yttrium aluminum garnet nanosecond-pulse laser, emitting at its fourth harmonic of 266 nm, using a mask projection technique to generate circular laser spots, several microns in diameter. Cross-section of selected structures were produced using a focused ion beam and were characterized via electron microscopy. The diffraction patterns of the silicon samples indicate that the laser formed tip maintains the same single crystal structure as the original silicon film. Examinations of the laser formed structures in metal films confirm that the microbumps are hollow, while revealing that the vertical protrusions are solid.

  12. Real time x-ray studies during nanostructure formation on silicon via low energy ion beam irradiation using ultrathin iron films

    SciTech Connect

    El-Atwani, Osman; Suslova, Anastassiya; Gonderman, Sean; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2012-12-24

    Real time grazing incidence small angle x-ray scattering and x-ray fluorescence (XRF) are used to elucidate nanodot formation on silicon surfaces during low energy ion beam irradiation of ultrathin iron-coated silicon substrates. Four surface modification stages were identified: (1) surface roughening due to film erosion, (2) surface smoothing and silicon-iron mixing, (3) structure formation, and (4) structure smoothing. The results conclude that 2.5 Multiplication-Sign 10{sup 15} iron atoms in a 50 nm depth triggers surface nanopatterning with a correlated nanodots distance of 25 nm. Moreover, there is a wide window in time where the surface can have correlated nanostructures even after the removal of all the iron atoms from the sample as confirmed by XRF and ex-situ x-ray photoelectron spectroscopy (XPS). In addition, in-situ XPS results indicated silicide formation, which plays a role in the structure formation mechanism.

  13. Oxygen ion-beam microlithography

    DOEpatents

    Tsuo, Y.S.

    1991-08-20

    A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.

  14. Oxygen ion-beam microlithography

    DOEpatents

    Tsuo, Y. Simon

    1991-01-01

    A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.

  15. Influence of the Ion-to-Atom Ratio on the Structure of CeO2 Buffer Layer by Ion Beam Assisted E-Beam Evaporation

    NASA Astrophysics Data System (ADS)

    Kim, Chang Su; Jo, Sung Jin; Kim, Woo Jin; Koo, Won Hoe; Baik, Hong Koo; Lee, Se Jong

    2005-09-01

    Using ion-beam assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane, (200) oriented CeO2 films with biaxial texture were deposited on Hastelloy C276 substrates at room temperature. The crystalline quality and in-plane orientation of films was investigated by X-ray diffraction 2θ-scan and Φ-scan, atomic force microscopy (AFM). It was shown that the in-plane and out-of-plane textures of the CeO2 films were controlled by the deposition parameters. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

  16. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications.

    PubMed

    Alias, Mohd S; Yang, Yang; Ng, Tien K; Dursun, Ibrahim; Shi, Dong; Saidaminov, Makhsud I; Priante, Davide; Bakr, Osman M; Ooi, Boon S

    2016-01-01

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption. PMID:26688008

  17. Ion Beams: In Situ Mitigation of Subsurface and Peripheral Focused Ion Beam Damage via Simultaneous Pulsed Laser Heating (Small 13/2016).

    PubMed

    Stanford, Michael G; Lewis, Brett B; Iberi, Vighter; Fowlkes, Jason D; Tan, Shida; Livengood, Rick; Rack, Philip D

    2016-04-01

    Focused ion beam (FIB) processing is an important direct-write nanoscale synthesis technique; however it generates subsurface defects that can preclude its use for many applications. On page 1779 P.D. Rack and co-workers demonstrate an in situ laser assisted focused ion beam synthesis approach, which photothermally mitigates the defects generated in silicon during focused He(+) and Ne(+) exposures. Finally, the group shows that laser assisted FIB reduces the damage generated in graphene nanochannels fabricated via the He(+) FIB. PMID:27038178

  18. Ion-beam-assisted deposition of MoS2 and other low-friction films. Interim report, Jun 88-Jun 92

    SciTech Connect

    Bolster, R.N.

    1992-09-11

    Vacuum-deposited films of molybdenum disulfide (MoS2) are effective as solid lubricants. Ion-beam-assisted deposition, which employs ion beam sputtering with an assist beam impinging on the growing film, has been investigated as a means of preparing low-friction high endurance coatings. The apparatus used and some of the techniques involved are described. Ion source operating parameters were optimized and the assist beam ion flux was quantified and found to follow a power-law relationship with beam power. The best way to produce MoS2 films was found to be cosputtering from separate Mo and S targets with deposition rates adjusted to obtain the desired stoichiometry. Deposition rates were found to also follow a power-law relationship with beam power, and formulae are given for predicting them, the ratio of assist ions to film atoms, and the effect of assist beam sputtering on film thickness. Inverse formulae are given for determining process parameters needed to achieve a selected film thickness and composition. A composite target for simultaneous Mo and S sputtering was developed. Deposition rates were determined for other metals: W, N1, Co, Cu, and Pb. Formulae relating target-to-substrate distance to deposition rate are given.

  19. A New Approach of Polycrystalline Silicon Film on Plastic Substrate Prepared by Ion Beam Deposition Followed by Excimer Laser Crystallization at Room Temperature

    NASA Astrophysics Data System (ADS)

    Kwon, Jang Yeon; Lim, Hyuck; Park, Kyung Bae; Jung, Ji Sim; Kim, Do Young; Cho, Hans S.; Kim, Seok Pil; Park, Young Soo; Kim, Jong Man; Noguchi, Takashi

    2006-05-01

    In this work, we propose a new polycrystalline silicon (poly-Si) film of large grain for thin film transistor on flexible substrate. Thin films of amorphous silicon were deposited on plastic substrate by using ion beam deposition (IBD) and crystallized by excimer laser annealing. The entire process was carried out at room temperature. Si film formed by IBD has much lower impurity such as Ar, O, and H than that deposited by conventional sputtering method. This high purity of Si film makes large grain size (0.5 μm) and shows high endurance of excimer laser energy both on quartz and plastic substrate for flexible active matrix organic light emitting diode (AMOLED).

  20. A study of the thin film battery electrolyte lithium phosphorus oxynitride deposited by an ion beam assisted process

    NASA Astrophysics Data System (ADS)

    Vereda-Moratilla, Fernando

    Thin film Li-ion batteries are currently the subject of a world-wide research effort because of their many potential applications as portable energy sources. One of the key elements of these batteries is the electrolyte. Since it was first produced in the early 1990's, the preferred solid state thin film Li-ion electrolyte is lithium phosphorus oxynitride (LiPON), which is normally grown by means of reactive rf sputtering of a Li3PO 4 target in an N2 atmosphere. Solid electrolytes such as LiPON have several advantages compared to the liquid electrolytes normally used in bulk batteries. Solid electrolytes avoid leakage and have excellent charge-discharge cycling properties. Furthermore, sputtered-deposited LiPON proved to be stable versus Li+/Li from 0 to +5.5 V, which exceeded the stability window of any of the liquid electrolytes. In this work we present a general study of the properties of LiPON thin films deposited by an alternative process: ion beam assisted deposition (IBAD). In this process Li3PO4 is vacuum thermally evaporated and the condensing film is simultaneously bombarded with nitrogen ions which incorporate to form LiPON. Because of its application as an electrolyte and because of a previous study in which we showed that tensile stress led to cracking of the LiPON films and subsequently to shorting of the battery devices, the emphasis of the study was placed on improving the electrochemical properties of the films and on reducing their residual stress. Additional effort was aimed at learning about the structure and the composition of our films. It has been shown that IBAD LiPON thin films are undoubtedly capable of high quality performance as the electrolyte in Li-ion thin film batteries. Their ionic conductivity is almost as high, and their electronic conductivity as low, as those of the sputtered films. Their major advantages when compared to sputtered LiPON films are: (i) a higher deposition rate; (ii) a lower concentration of reduced-phosphorus in

  1. Composition and Bonding in Amorphous Carbon Films Grown by Ion Beam Assisted Deposition: Influence of the Assistance Voltage

    SciTech Connect

    Albella, J.M.; Banks, J.C.; Climent-Font, A.; Doyle, B.L.; Gago, R.; Jimenez, I.; Terminello, L.J.

    1998-11-12

    Amorphous carbon films have been grown by evaporation of graphite with concurrent Ar+ ions bombardment assistance. The ion energy has been varied between 0-800 V while keeping a constant ion to carbon atom arrival ratio. Film composition and density were determined by ion scattering techniques (RBS and ERDA), indicating a negligible hydrogen content and a density dependence with the assistance voltage. The bonding structure of the films has been studied by Raman and X-ray Absorption Near-Edge (XANES) spectroscopy. Different qualitative effects have been found depending on the ion energy range. For ion energies below 300 eV, there is a densification of the carbon layer due to the increase in the sp3 content. For ion energies above 300 eV sputtering phenomena dominate over densification, and thinner films are found with increasing assistance voltage until no film is grown over 600 V. The films with the highest SP3 content are grown with intermediate energies between 200-300 V.

  2. Investigation of the mechanism of impurity assisted nanoripple formation on Si induced by low energy ion beam erosion

    SciTech Connect

    Koyiloth Vayalil, Sarathlal; Gupta, Ajay; Roth, Stephan V.; Ganesan, V.

    2015-01-14

    A detailed mechanism of the nanoripple pattern formation on Si substrates generated by the simultaneous incorporation of pure Fe impurities at low energy (1 keV) ion beam erosion has been studied. To understand and clarify the mechanism of the pattern formation, a comparative analysis of the samples prepared for various ion fluence values using two complimentary methods for nanostructure analysis, atomic force microscopy, and grazing incidence small angle x-ray scattering has been done. We observed that phase separation of the metal silicide formed during the erosion does not precede the ripple formation. It rather concurrently develops along with the ripple structure. Our work is able to differentiate among various models existing in the literature and provides an insight into the mechanism of pattern formation under ion beam erosion with impurity incorporation.

  3. The optimization of incident angles of low-energy oxygen ion beams for increasing sputtering rate on silicon samples

    NASA Astrophysics Data System (ADS)

    Sasaki, T.; Yoshida, N.; Takahashi, M.; Tomita, M.

    2008-12-01

    In order to determine an appropriate incident angle of low-energy (350-eV) oxygen ion beam for achieving the highest sputtering rate without degradation of depth resolution in SIMS analysis, a delta-doped sample was analyzed with incident angles from 0° to 60° without oxygen bleeding. As a result, 45° incidence was found to be the best analytical condition, and it was confirmed that surface roughness did not occur on the sputtered surface at 100-nm depth by using AFM. By applying the optimized incident angle, sputtering rate becomes more than twice as high as that of the normal incident condition.

  4. In-plane aligned YBCO film on textured YSZ buffer layer deposited on NiCr alloy tape by laser ablation with only O+ ion beam assistance

    NASA Astrophysics Data System (ADS)

    Tang Huang, Xin; Qing Wang, You; Wang, Qiu Liang; Chen, Qing Ming

    2000-02-01

    High critical current density and in-plane aligned YBa2 Cu3 O7-x (YBCO) film on a textured yttria-stabilized zirconia (YSZ) buffer layer deposited on NiCr alloy (Hastelloy c-275) tape by laser ablation with only O+ ion beam assistance was fabricated. The values of the x-ray phi-scan full width at half-maximum (FWHM) for YSZ(202) and YBCO(103) are 18° and 11°, respectively. The critical current density of YBCO film is 7.9 × 105 A cm-2 at liquid nitrogen temperature and zero field, and its critical temperature is 90 K.

  5. Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence

    NASA Astrophysics Data System (ADS)

    Gago, R.; Vázquez, L.; Cuerno, R.; Varela, M.; Ballesteros, C.; Albella, J. M.

    2002-06-01

    We report on the production of nanoscale patterning on Si substrates by low-energy ion-beam sputtering. The surface morphology and structure of the irradiated surface were studied by atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM). Under ion irradiation at off-normal incidence angle (~50°), AFM images show the formation of both nanoripple and sawtooth-like structures for sputtering times longer than 20 min. The latter feature coarsens appreciably after 60 min of sputtering, inducing a large increase in the surface roughness. This behaviour is attributed to the preferential direction determined on the substrate by the ion beam for this incidence angle, leading to shadowing effects among surface features in the sputtering process. Under irradiation at normal incidence, the formation of an hexagonal array of nanodots is induced for irradiation times longer than 2 min. The shape and crystallinity of the nanodots were determined by HRTEM. At this incidence angle, the surface roughness is very low and remains largely unchanged even after 16 h of sputtering. For the two angle conditions studied, the formation of the corresponding surface structures can be understood as the interplay between an instability due to the sputtering yield dependence on the local surface curvature and surface smoothing processes such as surface diffusion.

  6. Influence of 700 °C vacuum annealing on fracture behavior of micro/nanoscale focused ion beam fabricated silicon structures

    NASA Astrophysics Data System (ADS)

    Goshima, Yoshiharu; Fujii, Tatsuya; Inoue, Shozo; Namazu, Takahiro

    2016-06-01

    In this paper, we describe the influence of 700 °C vacuum annealing on strength and fracture behavior of micro- and nano-scale Si structures fabricated by focused ion beam (FIB). Si nanowires (NWs) made from silicon-on-nothing (SON) membrane are fabricated using FIB. Microscale Si specimens are fabricated by conventional micromachining technologies and FIB. These specimens are tensioned to failure using specially developed microelectromechanical systems (MEMS) device and thin-film tensile tester, respectively. The mean fracture strengths of the nano- and microscale specimens are 5.6 and 1.6 GPa, respectively, which decrease to 2.9 and 0.9 GPa after vacuum annealing at 700 °C for only 10 s. These strength values do not vary with increasing annealing time. Fracture origin and its behavior are discussed in the light of fracture surface and FIB damage layer observations.

  7. On the mechanisms of the formation of nanocrystalline Cr-N and V-N coatings upon ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Guglya, A. G.

    2010-01-01

    The paper generalizes the results of investigations performed at the Kharkov Institute of Physics and Technology, National Scientific Center, aimed at the development and analysis of nanocrystalline Cr-N and V-N coatings produced by the method of ion-beam-assisted deposition (IBAD method). The effect of temperature of the process and the ratio between its ionic and atomic components (N+/Cr, V) on the resistivity of the coatings has been studied. It has been found that the ion-assisted irradiation leads to the formation of nanocrystalline nitride structures, whose phase composition depends not only on the concentration of nitrogen implanted by the ion beam, but also on the amount of the physical adsorption of nitrogen, including its adsorption from the residual atmosphere. It has been shown that the IBAD method can be used for both production of dense nanocrystalline composites and creation of nanoporous structures. It has been found that the grain size, the internal porosity, and the electrophysical characteristics of the coatings are intimately connected with the Gibbs energy of the nitride phases. The mechanisms responsible for the formation of such coatings have been discussed in terms of the thermodynamics of the nitride-formation process.

  8. Surface roughness of MgO thin film and its critical thickness for optimal biaxial texturing by ion-beam-assisted deposition

    SciTech Connect

    Miyata, S.; Ibi, A.; Izumi, T.; Shiohara, Y.

    2011-06-01

    We investigated the deposition time dependences of the in-plane grain alignment ({Delta}{phi}) and the surface roughness (w) of biaxially textured MgO thin films fabricated by ion-beam-assisted deposition (IBAD) and found a strong correlation between them. The time evolution of the surface roughness of IBAD-MgO showed an abrupt increase at the same time corresponding to the beginning of the deterioration in {Delta}{phi}. The roughness versus thickness profiles obtained under different deposition conditions with different assisting ion-beam currents collapsed to a single curve, even though the deposition rates were significantly different in each condition. This implies that the abrupt increase in roughness occurred at the same thickness--of about 4 nm--irrespective of the deposition rate. The result also indicated that the {Delta}{phi} deterioration began with the same thickness of about 4 nm. This ''critical'' thickness of about 4 nm might be related to the completion of the crystallization of the film. Further, deposition beyond the critical thickness, therefore, became merely a homoepitaxial deposition under the ''IBAD'' condition, which was far from optimal because of the ion bombardment and low temperature (no-heating), and thus {Delta}{phi} deteriorated. Based on these considerations, we propose an approach to attain a sharp texture in a IBAD-MgO-based biaxial substrate; moreover, we demonstrated this approach using a two-step deposition process.

  9. Tunneling behavior in ion-assist ion-beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions

    SciTech Connect

    Singh, Braj Bhusan; Chaudhary, Sujeet; Pandya, Dinesh K.

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Dual ion beam sputtered MgO barrier for MTJs. ► ∼12% TMR at 60 K. ► Glazman and Matveev model fitted for quantification of elastic and inelastic tunneling conductance through barrier. -- Abstract: Magnetic tunnel junctions (MTJs) consisting of CoFe and NiFe as ferromagnetic electrodes and MgO as insulating barrier fabricated through in situ shadow masking employing ion beam sputtering are studied for their tunneling magnetoresistance (TMR) and temperature dependence of the tunneling conductance behavior. The tunneling characteristics of these MTJs exhibited barrier height of 0.7 eV and width of 3.3 nm. These MTJs possessed ∼12% TMR at 60 K. The temperature dependence of conductance behavior of these junctions have revealed finite contributions from inelastic tunneling through the barrier via hopping conduction via present localized states which arise due to the presence of ionic interstitial defects in the MgO oxide barrier. The fitting of the data reveals that thirteenth order of hopping conduction is operative through MgO barrier.

  10. Influence of Ag thickness on structural, optical, and electrical properties of ZnS/Ag/ZnS multilayers prepared by ion beam assisted deposition

    SciTech Connect

    Leng Jian; Yu Zhinong; Xue Wei; Zhang Ting; Jiang Yurong; Zhang Jie; Zhang Dongpu

    2010-10-15

    The structural, optical, and electrical characteristics of zinc sulfide (ZnS)/Ag/ZnS (ZAZ) multilayer films prepared by ion beam assisted deposition on k9 glass have been investigated as a function of Ag layer thickness. The characteristics of ZAZ multilayer are significantly improved up insertion of optimal Ag thickness between ZnS layers. The results show that due to bombardment of Ar ion beam, distinct Ag islands evolve into continuous Ag films at a thin Ag thickness of about 4 nm. The thinner Ag film as a thickness of 2 nm leads to high sheet resistance and low transmittance for the interface scattering induced by the Ag islands or noncontinuous films; and when the Ag thickness is over 4 nm, the ZAZ multilayer exhibits a remarkably reduced sheet resistance between 7-80 {Omega}/sq for the increase in carrier concentration and mobility of Ag layer, and a high transmittance over 90% for the interference phenomena of multilayers and low absorption and surface scattering of Ag layer. The ZAZ multilayer with 14 nm Ag film has a figure of merit up to 6.32x10{sup -2} {Omega}{sup -1}, an average transmittance over 92% and a sheet resistance of 7.1 {Omega}/sq. The results suggest that ZAZ film has better optoelectrical properties than conditional indium tin oxide single layer.

  11. Influence of the ion irradiation on the properties of β-FeSi 2 layers prepared by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Barradas, N. P.; Panknin, D.; Wieser, E.; Schmidt, B.; Betzl, M.; Mücklich, A.; Skorupa, W.

    1997-05-01

    β-FeSi 2 layers on Si substrates were produced by ion beam assisted deposition (IBAD). The influence of the deposition parameters on the structure was studied by Rutherford backscattering, X-ray diffraction, cross-section transmission electron microscopy, and scanning electron microscopy. The layers grow in a columnar way with pin-holes and their surface is rough. An IBAD process with low Ar energy ( EAr = 200 eV) and low Ar ion to Fe atom ratio ( {I Ar}/{A Fe} = 0.15 ) improves the layer structure in comparison to samples prepared without Ar irradiation. Less pin-holes are formed, and the roughness shows a minimum. The roughness increases for larger values of EAr or {I Ar}/{A Fe}. All samples are polycrystalline but with a pronounced texture. The preferential orientation FeSi 2(110,101)∥Si(001), with a few degrees misorientation, is found. This preferred grain orientation is also enhanced by the IBAD process. Hall effect measurements were done and the I-V characteristics of the samples were measured. The results are discussed in relation with the influence of the ion beam.

  12. Ion Beam Propulsion Study

    NASA Technical Reports Server (NTRS)

    2008-01-01

    The Ion Beam Propulsion Study was a joint high-level study between the Applied Physics Laboratory operated by NASA and ASRC Aerospace at Kennedy Space Center, Florida, and Berkeley Scientific, Berkeley, California. The results were promising and suggested that work should continue if future funding becomes available. The application of ion thrusters for spacecraft propulsion is limited to quite modest ion sources with similarly modest ion beam parameters because of the mass penalty associated with the ion source and its power supply system. Also, the ion source technology has not been able to provide very high-power ion beams. Small ion beam propulsion systems were used with considerable success. Ion propulsion systems brought into practice use an onboard ion source to form an energetic ion beam, typically Xe+ ions, as the propellant. Such systems were used for steering and correction of telecommunication satellites and as the main thruster for the Deep Space 1 demonstration mission. In recent years, "giant" ion sources were developed for the controlled-fusion research effort worldwide, with beam parameters many orders of magnitude greater than the tiny ones of conventional space thruster application. The advent of such huge ion beam sources and the need for advanced propulsion systems for exploration of the solar system suggest a fresh look at ion beam propulsion, now with the giant fusion sources in mind.

  13. Ion beam texturing

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    A microscopic surface texture is created by sputter etching a surface while simultaneously sputter depositing a lower sputter yield material onto the surface. A xenon ion beam source has been used to perform this texturing process on samples as large as three centimeters in diameter. Ion beam textured surface structures have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, Stainless steel, Au, and Ag. Surfaces have been textured using a variety of low sputter yield materials - Ta, Mo, Nb, and Ti. The initial stages of the texture creation have been documented, and the technique of ion beam sputter removal of any remaining deposited material has been studied. A number of other texturing parameters have been studied such as the variation of the texture with ion beam power, surface temperature, and the rate of texture growth with sputter etching time.

  14. Pulsed ion beam source

    DOEpatents

    Greenly, John B.

    1997-01-01

    An improved pulsed ion beam source having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center.

  15. Amorphous silicon carbonitride diaphragm for environmental-cell transmission electron microscope fabricated by low-energy ion beam induced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Matsutani, Takaomi; Yamasaki, Kayo; Imaeda, Norihiro; Kawasaki, Tadahiro

    2015-12-01

    An amorphous silicon carbonitride (a-SiCN) diaphragm for an environmental-cell transmission electron microscope (E-TEM) was fabricated by low-energy ion beam induced chemical vapor deposition (LEIBICVD) with hexamethyldisilazane (HMDSN). The films were prepared by using gaseous HMDSN and N2+ ions with energies ranging from 300 to 600 eV. The diaphragms were applied to Si (1 0 0) and a Cu grid with 100-μm-diameter holes. With increasing ion energy, these diaphragms became perfectly smooth surfaces (RMS = 0.43 nm at 600 eV), as confirmed by atomic force microscopy and TEM. The diaphragms were amorphous and transparent to 200 kV electrons, and no charge-up was observed. Fourier transform infrared spectra and X-ray photoelectron spectra revealed that the elimination of organic compounds and formation of Si-N and C-N bonds can be promoted in diaphragms by increasing the ion impact energy. The resistance to electron beams and reaction gases in the E-cell was improved when the diaphragm was formed with high ion energy.

  16. The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Kabyshev, A. V.; Konusov, F. V.; Pavlov, S. K.; Remnev, G. E.

    2016-02-01

    The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T017-2.4T018 eV-Am-3 distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB.

  17. MEV ion beam induced epitaxial crystallization of Si0.99C0.01 layers on silicon

    NASA Astrophysics Data System (ADS)

    Rey, S.; Muller, D.; Grob, J. J.; Grob, A.; Stoquert, J. P.

    1997-02-01

    Multiple energy carbon ion implantation was used to form a 150 nm thick uniformly 1 at. %-doped layers in preamorphized silicon. Unlike conventional furnace annealing, inefficient up to 700 °C, a 1.5 MeV 84Kr+ bombardment is shown to induce the crystallization of such layers at temperatures ranging between 400 and 500 °C. RBS-channeling measurements have been used to estimate the crystallization velocity which is in the order of 10 nm per 1015cm-2. After complete recrystallization, the films have been characterized by Fourier Transform Infra-Red spectroscopy showing that the carbon atoms are neither located in substitutional position nor precipitated in SiC clusters. However, the carbon profile, measured by Secondary Ion Mass Spectroscopy is not modified by the process and oblique incidence channeling angular scans demonstrate that the layers are strained.

  18. Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors

    NASA Astrophysics Data System (ADS)

    Ma, B.; Li, M.; Fisher, B. L.; Balachandran, U.

    2002-07-01

    Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on mechanically polished Hastelloy C276 (HC) substrates by ion-beam-assisted deposition and electron-beam evaporation. The surface root-mean-square (RMS) roughness of the polished HC substrates was ≈3 nm, as measured by atomic force microscopy (AFM). A water-cooled sample stage was used to hold the substrate temperature below 100 °C during deposition. RMS roughness of ≈3.3 nm was measured on the deposited YSZ films by AFM. X-ray pole figures were conducted for texture analysis; in-plane texture measured from YSZ (111) φ-scan FWHM was 13.2° and out-of-plane texture from the YSZ (002) ω-scan FWHM was 7.7°. An ≈10 nm thick CeO2 buffer layer was deposited on the YSZ film at 800 °C before YBCO films were ablated by pulsed laser deposition at 780 °C in a 250 mTorr flowing oxygen environment. Good in-plane texture with FWHM ≈ 7° was observed in YBCO films. Tc = 90 K, with sharp transition, and transport Jc of ≈2.2 × 106 A cm-2 were observed in a 0.5 μm thick, 5 mm wide, and 1 cm long sample at 77 K in self-field.

  19. Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944 nm high power diode laser

    NASA Astrophysics Data System (ADS)

    Ghadimi-Mahani, A.; Farsad, E.; Goodarzi, A.; Tahamtan, S.; Abbasi, S. P.; Zabihi, M. S.

    2015-11-01

    Single-layer and multi-layer coatings were applied on the surface of diode laser facets as mirrors. This thin film mirrors were designed, deposited, optimized and characterized. The effects of mirrors on facet passivation and optical properties of InGaAs/AlGaAs/GaAs diode lasers were investigated. High-Reflective (HR) and Anti-Reflective (AR) mirrors comprising of four double-layers of Al2O3/Si and a single layer of Al2O3, respectively, were designed and optimized by Macleod software for 944 nm diode lasers. Optimization of Argon flow rate was studied through Alumina thin film deposition by Ion Beam Assisted Deposition (IBAD) for mirror improvement. The nanostructured HR and AR mirrors were deposited on the front and back facet of the laser respectively, by IBAD system under optimum condition. Atomic Force Microscope (AFM), Vis-IR Spectrophotometer, Field Emission Scanning Electron Microscopy (FESEM) and laser characterization Test (P-I) were used to characterize various properties of mirrors and lasers. AFM images show mirror's root mean square roughness is nearly 1 nm. The Spectrophotometer results of the front facet transmission and the back facet reflection are in good agreement with the simulation results. Optical output power (P) versus driving current (I) characteristics, measured before and after coating the facet, revealed a significant output power enhancement due to optimized AR and HR optical coatings on facets.

  20. Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching.

    PubMed

    Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming

    2016-12-01

    In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 10(10) cm(-2)) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices. PMID:27117635

  1. Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming

    2016-04-01

    In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 1010 cm-2) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.

  2. Bone apposition on implants coated with calcium phosphate by ion beam assisted deposition in oversized drilled sockets: a histologic and histometric analysis in dogs

    PubMed Central

    Kim, Min-Soo; Jung, Ui-Won; Kim, Sungtae; Lee, Jung-Seok; Lee, In-Seop

    2013-01-01

    Purpose The purpose of this study was to evaluate the osseointegration of calcium phosphate (CaP)-coated implants by ion beam assisted deposition with a lack of primary stability. Methods A total of 20 CaP-coated implants were bilaterally placed in the mandible of five dogs. In the rotational implant group, the implants were inserted in oversized drilled sockets without mechanical engagement, while the conventional surgical protocol was followed in the control group. Each group was allowed to heal for 4 and 8 weeks. The bone-to-implant contact (BIC, %) was measured by a histometric analysis. Results All of the implants were well-maintained and healing was uneventful. In the histologic observation, all of the implants tested were successfully osseointegrated with a high level of BIC at both observation intervals. There was no significant difference in BIC among any of the groups. Conclusions Within the limitation of this study, successful osseointegration of CaP-coated implants could be achieved in unfavorable conditions without primary stability. PMID:23507657

  3. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    SciTech Connect

    Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul; Wiedwald, Ulf

    2014-01-14

    FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

  4. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    SciTech Connect

    Nishiwaki, M.; Ueda, K. Asano, H.

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

  5. Pulsed ion beam source

    DOEpatents

    Greenly, J.B.

    1997-08-12

    An improved pulsed ion beam source is disclosed having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center. 12 figs.

  6. Ion-beam technologies

    SciTech Connect

    Fenske, G.R.

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  7. Maskless, resistless ion beam lithography

    SciTech Connect

    Ji, Qing

    2003-03-10

    are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P{sup +} beam implantation at 5 keV is also presented. With implantation dose of around 10{sup 16} cm{sup -2}, the electron concentration is about 2.5 x 10{sup 18} cm{sup -3} and electron mobility is around 200 cm{sup 2}/V{center_dot}s. To demonstrate the suitability of scanning FIB lithography for the manufacture of integrated circuit devices, SOI MOSFET fabrication using the maskless, resistless ion beam lithography is demonstrated. An array of microcolumns can be built by stacking multi-aperture electrode and insulator layers. Because the multicusp plasma source can achieve uniform ion density over a large area, it can be used in conjunction with the array of microcolumns, for massively parallel FIB processing to achieve reasonable exposure throughput.

  8. Ion Beam Energy Dependant Study of Nanopore Sculpting

    NASA Astrophysics Data System (ADS)

    Ledden, Brad

    2005-03-01

    Experiments show that ion beams of various energies (1keV, 3keV, and 5keV) can be used to controllably ``sculpt'' nanoscale features in silicon nitride films using a feedback controlled ion beam sculpting apparatus. We report on nanopore ion beam sculpting effects that depend on inert gas ion beam energy. We show that: (1) all ion beam energies enable single nanometer control of structural dimensions in nanopores; (2) the ion beam energies above show similar ion beam flux dependence of nanopore formation; (3) the thickness of nanopores differs depending on ion beam energy. Computer simulations (with SRIM and TRIM) and an ``adatom'' surface diffusion model are employed to explain the dynamics of nanoscale dimension change by competing sputtering and surface mass transport processes induced by different ion beam irradiation. These experiments and theoretical work reveal the surface atomic transport phenomena in a quantitative way that allows the extraction of parameters such as the adatom surface diffusion coefficients and average travel distances.

  9. Ion-assisted recrystallization of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Priolo, F.; Spinella, C.; La Ferla, A.; Rimini, E.; Ferla, G.

    1989-12-01

    Our recent work on ion-beam-assisted epitaxial growth of amorphous Si layers on single crystal substrates is reviewed. The planar motion of the crystal-amorphous interface was monitored in situ, during irradiations, by transient reflectivity measurements. This technique allows the measurement of the ion-induced growth rate with a very high precision. We have observed that this growth rate scales linearly with the number of displacements produced at the crystal-amorphous interface by the impinging ions. Moreover the regrowth onto <100> oriented substrates is a factor of ≈ 4 faster with respect to that on <111> substrates. Impurities dissolved in the amorphous layer influence the kinetics of recrystallization. For instance, dopants such as As, B and P enhance the ion-induced growth rate while oxygen has the opposite effect. The dependence of the rate on impurity concentration is however less strong with respect to pure thermal annealing. For instance, an oxygen concentration of 1 × 1021 / cm3 decreases the ion-induced growth rate by a factor of ≈ 3; this same concentration would have decreased the rate of pure thermal annealing by more than 4 orders of magnitude. The reduced effects of oxygen during ion-beam crystallization allow the regrowth of deposited Si layers despite the presence of a high interfacial oxygen content. The process is investigated in detail and its possible application to the microelectronic technology is discussed.

  10. Ion beam mixing by focused ion beam

    SciTech Connect

    Barna, Arpad; Kotis, Laszlo; Labar, Janos L.; Osvath, Zoltan; Toth, Attila L.; Menyhard, Miklos; Zalar, Anton; Panjan, Peter

    2007-09-01

    Si amorphous (41 nm)/Cr polycrystalline (46 nm) multilayer structure was irradiated by 30 keV Ga{sup +} ions with fluences in the range of 25-820 ions/nm{sup 2} using a focused ion beam. The effect of irradiation on the concentration distribution was studied by Auger electron spectroscopy depth profiling, cross-sectional transmission electron microscopy, and atomic force microscopy. The ion irradiation did not result in roughening on the free surface. On the other hand, the Ga{sup +} irradiation produced a strongly mixed region around the first Si/Cr interface. The thickness of mixed region depends on the Ga{sup +} fluence and it is joined to the pure Cr matrix with an unusual sharp interface. With increasing fluence the width of the mixed region increases but the interface between the mixed layer and pure Cr remains sharp. TRIDYN simulation failed to reproduce this behavior. Assuming that the Ga{sup +} irradiation induces asymmetric mixing, that is during the mixing process the Cr can enter the Si layer, but the Si cannot enter the Cr layer, the experimental findings can qualitatively be explained.

  11. Ion beam surface modification

    NASA Technical Reports Server (NTRS)

    Dwight, D. W.

    1982-01-01

    The essential details of a study on the practical applications and mechanisms of polymer sputtering via Argon ion impact are summarized. The potential to modify the properties of polymer surfaces to improve their adherence, durability, biocompatibility, or other desirable properties by ion beam sputtering was emphasized. Ion beam milling can be of benefit as an analytical tool to obtain composition versus depth information. Ion impact from a directed ion gun source specifically etches polymer structures according to their morphologies, therefore this technique may be useful to study unknown or new morphological features. Factors addressed were related to: (1) the texture that arises on a polymer target after ion impact; (2) the chemistry of the top surface after ion impact; (3) the chemistry of sputtered films of polymeric material deposited on substrates placed adjacent to targets during ion impact; and (4) practical properties of textured polymer targets, specifically the wettability and adhesive bonding properties.

  12. Focused ion beam system

    DOEpatents

    Leung, K.; Gough, R.A.; Ji, Q.; Lee, Y.Y.

    1999-08-31

    A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.

  13. Focused ion beam system

    DOEpatents

    Leung, Ka-Ngo; Gough, Richard A.; Ji, Qing; Lee, Yung-Hee Yvette

    1999-01-01

    A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

  14. Ion beam generating apparatus

    DOEpatents

    Brown, Ian G.; Galvin, James

    1987-01-01

    An ion generating apparatus utilizing a vacuum chamber, a cathode and an anode in the chamber. A source of electrical power produces an arc or discharge between the cathode and anode. The arc is sufficient to vaporize a portion of the cathode to form a plasma. The plasma is directed to an extractor which separates the electrons from the plasma, and accelerates the ions to produce an ion beam.

  15. Intense ion beam generator

    DOEpatents

    Humphries, Jr., Stanley; Sudan, Ravindra N.

    1977-08-30

    Methods and apparatus for producing intense megavolt ion beams are disclosed. In one embodiment, a reflex triode-type pulsed ion accelerator is described which produces ion pulses of more than 5 kiloamperes current with a peak energy of 3 MeV. In other embodiments, the device is constructed so as to focus the beam of ions for high concentration and ease of extraction, and magnetic insulation is provided to increase the efficiency of operation.

  16. Ion Beam Simulator

    Energy Science and Technology Software Center (ESTSC)

    2005-11-08

    IBSimu(Ion Beam Simulator) is a computer program for making two and three dimensional ion optical simulations. The program can solve electrostatic field in a rectangular mesh using Poisson equation using Finite Difference method (FDM). The mesh can consist of a coarse and a fine part so that the calculation accuracy can be increased in critical areas of the geometry, while most of the calculation is done quickly using the coarse mesh. IBSimu can launch ionmore » beam trajectories into the simulation from an injection surface or fomo plasma. Ion beam space charge of time independent simulations can be taken in account using Viasov iteration. Plasma is calculated by compensating space charge with electrons having Boltzmann energy distribution. The simulation software can also be used to calculate time dependent cases if the space charge is not calculated. Software includes diagnostic tools for plotting the geometry, electric field, space charge map, ion beam trajectories, emittance data and beam profiles.« less

  17. Results of a pilot study and a proposal to build a high current pulsed nanosecond low energy Si ion beam for the detection of trace amounts of heavy impurities in silicon

    SciTech Connect

    Jacobsen, F.M.; Zarcone, M.J.; Steski, D.; Smith, K.; Thieberger, P.; Lynn, K.G.; Throwe, J.; Cholewa, M. |

    1996-01-01

    Next generations of Very Large Scale Integrated circuits will require impurity contamination below 10{sup 8} atoms/cm. To detect such small quantities at or near the surface, new techniques have to be developed. The authors propose to build a high current nanosecond pulsed Si ion beam which can detect such small quantities of heavy impurities with a high mass resolution. A pilot study shows that the approach can be used to detect impurities in silicon below the 10{sup 7} atoms/cm{sup 2} level.

  18. Ion beam lithography system

    DOEpatents

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  19. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  20. Ion beam accelerator system

    NASA Technical Reports Server (NTRS)

    Aston, Graeme (Inventor)

    1984-01-01

    A system is described that combines geometrical and electrostatic focusing to provide high ion extraction efficiency and good focusing of an accelerated ion beam. The apparatus includes a pair of curved extraction grids (16, 18) with multiple pairs of aligned holes positioned to direct a group of beamlets (20) along converging paths. The extraction grids are closely spaced and maintained at a moderate potential to efficiently extract beamlets of ions and allow them to combine into a single beam (14). An accelerator electrode device (22) downstream from the extraction grids, is at a much lower potential than the grids to accelerate the combined beam.

  1. Ion beam accelerator system

    NASA Technical Reports Server (NTRS)

    Aston, G. (Inventor)

    1981-01-01

    A system is described that combines geometrical and electrostatic focusing to provide high ion extraction efficiency and good focusing of an accelerated ion beam. The apparatus includes a pair of curved extraction grids with multiple pairs of aligned holes positioned to direct a group of beamlets along converging paths. The extraction grids are closely spaced and maintained at a moderate potential to efficiently extract beamlets of ions and allow them to combine into a single beam. An accelerator electrode device downstream from the extraction grids is at a much lower potential than the grids to accelerate the combined beam. The application of the system to ion implantation is mentioned.

  2. ITEP MEVVA ion beam for rhenium silicide production

    SciTech Connect

    Kulevoy, T.; Seleznev, D.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Yakushin, P.; Petrenko, S.; Gerasimenko, N.; Medetov, N.; Zaporozhan, O.

    2010-02-15

    The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

  3. Heavy ion beam probing

    SciTech Connect

    Hickok, R L

    1980-07-01

    This report consists of the notes distributed to the participants at the IEEE Mini-Course on Modern Plasma Diagnostics that was held in Madison, Wisconsin in May 1980. It presents an overview of Heavy Ion Beam Probing that briefly describes the principles and discuss the types of measurements that can be made. The problems associated with implementing beam probes are noted, possible variations are described, estimated costs of present day systems, and the scaling requirements for large plasma devices are presented. The final chapter illustrates typical results that have been obtained on a variety of plasma devices. No detailed calculations are included in the report, but a list of references that will provide more detailed information is included.

  4. Introduction to Ion Beam Therapy

    SciTech Connect

    Martisikova, Maria

    2010-01-05

    Presently, ion beam therapy reaches an increasing interest within the field of radiation therapy, which is caused by the promising clinical results obtained in the last decades. Ion beams enable higher dose conformation to the tumor and increased sparing of the surrounding tissue in comparison to the standard therapy using high energy photons. Heavy ions, like carbon, offer in addition increased biological effectiveness, which makes them suitable for treatment of radioresistant tumors. This contribution gives an overview over the physical and biological properties of ion beams. Common fundamental principles of ion beam therapy are summarized and differences between standard therapy with high energy photons, proton and carbon ion therapy are discussed. The technologies used for the beam production and delivery are introduced, with emphasis to the differences between passive and active beam delivery systems. The last part concentrates on the quality assurance in ion therapy. Specialties of dosimetry in medical ion beams are discussed.

  5. Nanopore Sculpting with Low Energy Ion Beam of Noble Gases

    NASA Astrophysics Data System (ADS)

    Cai, Qun; Ledden, Brad; Krueger, Eric; Golovchenko, Jene; Li, Jiali

    2005-03-01

    Experiments show that 3keV Helium, Neon, Argon, Krypton, and Xenon ion beams can be used to controllably ``sculpt'' nanoscale features in silicon nitride films using a feedback controlled ion beam sculpting apparatus. Here we report nanopore ion beam sculpting effects that depend on the inert gas ion species. We demonstrate that: (1) all the noble gas ion beams enable single nanometer control of structural dimensions in nanopores; (2) every ion species above shows similar ion beam flux dependence of nanopore formation, (3) the thickness of nanopores sculpted with different inert gas ion beam is deferent. Computer simulations (with SRIM and TRIM) and an ``adatom'' surface diffusion model are employed to explain the dynamics of nanoscale dimension change by competing sputtering and surface mass transport processes induced by different ion beam irradiation. These experiments and theoretical work reveal the surface atomic transport phenomena in a quantitative way that allows the extraction of parameters such as the adatom surface diffusion coefficients and average travel distances.

  6. Status of radioactive ion beams at the HRIBF

    NASA Astrophysics Data System (ADS)

    Stracener, D. W.

    2003-05-01

    Radioactive Ion Beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF) are produced using the isotope separation on-line technique and are subsequently accelerated up to a few MeV per nucleon for use in nuclear physics experiments. The first RIB experiments at the HRIBF were completed at the end of 1998 using 17F beams. Since then other proton-rich ion beams have been developed and a large number of neutron-rich ion beams are now available. The neutron-rich radioactive nuclei are produced via proton-induced fission of uranium in a low-density matrix of uranium carbide. Recently developed RIBs include 25Al from a silicon carbide target and isobarically pure beams of neutron-rich Ge, Sn, Br and I isotopes from a uranium carbide target.

  7. Applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Gelerinter, E.; Spielberg, N.

    1980-01-01

    Wire adhesion in steel belted radial tires; carbon fibers and composite; cold welding, brazing, and fabrication; hydrogen production, separation, and storage; membrane use; catalysis; sputtering and texture; and ion beam implantation are discussed.

  8. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  9. Ion Beam Modification of Materials

    SciTech Connect

    Averback, B; de la Rubia, T D; Felter, T E; Hamza, A V; Rehn, L E

    2005-10-10

    This volume contains the proceedings of the 14th International Conference on Ion Beam Modification of Materials, IBMM 2004, and is published by Elsevier-Science Publishers as a special issue of Nuclear Instruments and Methods B. The conference series is the major international forum to present and discuss recent research results and future directions in the field of ion beam modification, synthesis and characterization of materials. The first conference in the series was held in Budapest, Hungary, 1978, and subsequent conferences were held every two years at locations around the Globe, most recently in Japan, Brazil, and the Netherlands. The series brings together physicists, materials scientists, and ion beam specialists from all over the world. The official conference language is English. IBMM 2004 was held on September 5-10, 2004. The focus was on materials science involving both basic ion-solid interaction processes and property changes occurring either during or subsequent to ion bombardment and ion beam processing in relation to materials and device applications. Areas of research included Nanostructures, Multiscale Modeling, Patterning of Surfaces, Focused Ion Beams, Defects in Semiconductors, Insulators and Metals, Cluster Beams, Radiation Effects in Materials, Photonic Devices, Ion Implantation, Ion Beams in Biology and Medicine including New Materials, Imaging, and Treatment.

  10. Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

    SciTech Connect

    El-Atwani, Osman; Gonderman, Sean; Suslova, Anastassiya; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2013-03-28

    We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.

  11. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Meng, Jian-ping; Fu, Zhi-qiang; Liu, Xiao-peng; Yue, Wen; Wang, Cheng-biao

    2014-10-01

    In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV-vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

  12. Synthesis and characterization of titanium carbide, titanium boron carbonitride, titanium boride/titanium carbide and titanium carbide/chromium carbide multilayer coatings by reactive and ion beam assisted, electron beam-physical vapor deposition (EB-PVD)

    NASA Astrophysics Data System (ADS)

    Wolfe, Douglas Edward

    The purpose of the present work was to investigate the synthesis of titanium carbide, TiBCN, TiB2/TiC and TiC/Cr23C6 multilayer coatings by several methods of electron beam-physical vapor deposition (EB-PVD) and examine the affects of various processing parameters on the properties and microstructures of the coatings. TiC was successfully deposited by reactive ion beam assisted (RIBA), EB-PVD and the results were compared to various titanium carbide coatings deposited by a variety of techniques. The affects of substrate temperature and ion beam current density were correlated with composition, hardness, changes in the lattice parameter, degree of crystallographic texture, residual stress, surface morphology, and microstructure. The average Vicker's hardness number was found to increase with increasing ion beam current density and increase over the substrate temperature range of 250°C to 650°C. The average Vicker's hardness number decreased at a substrate temperature of 750°C as a result of texturing and microstructure. The present investigation shows that the average Vicker's hardness number is not only a function of the composition, but also the microstructure including the degree of crystallographic texture. TiB2/TiC multilayer coatings were deposited by argon ion beam assisted, EB-PVD with varying number of total layers to two different film thicknesses under slightly different deposition conditions. In both cases, the hardness of the coatings increased with increasing number of total layers. The adhesion of the coatings ranged from 30 N to 50 N, with the better adhesion values obtained with the thinner coatings. The crystallographic texture coefficients of both the TiC and TiB2 layers were found to change with increasing number of total layers. The multilayer design was found to significantly affect the microstructure and grain size of the deposited coatings. The fracture toughness was found to decrease with increasing number of total layers and was

  13. Production and characterization of ion beams from magnetically insulated diodes

    SciTech Connect

    Neri, J.M.

    1982-01-01

    The operation of magnetically insulated diodes and the characteristics of the resulting ion beams have been investigated using two pulsed power generators, LYNX at the 10/sup 9/W power level, and Neptune at the 10/sup 11/W power level. LYNX is a small magnetically insulated diode driven directly by a Marx bank. By changing the material used as the surface flashover ion source, the majority ion species generated by the diode could be chosen. Ion beams produced so far by this device are: protons, lithium, boron, carbon, sodium, strontium, and barium. Typical beam parameters for the ion beams are peak energies of 300 keV, current densities of 40 to 60 A/cm/sup 2/, and pulse durations of 300 to 400 nsec. The ion beam uniformity, divergence, and reproducibility were shown to be a function of the surface flashover source geometry. Finally, the LYNX ion beam was also used to anneal silicon crystals and other materials science experiments. The diode used on the Neptune generator was designed to study virtual cathode formation in a high power magnetically insulated diode. The physical cathode was replaced by electrons that ExB drift on the applied magnetic field lines. It was found that the best electrode configuration is one in which the electrons are required to only undergo the Hall drift to form the cathode. The divergence of the ion beam was examined with time-dependent and time-integrated shadowbox diagnostics. It was found that the intrinsic divergence of the ion beam does not have a strong directional dependence.

  14. Focused ion beams in biology.

    PubMed

    Narayan, Kedar; Subramaniam, Sriram

    2015-11-01

    A quiet revolution is under way in technologies used for nanoscale cellular imaging. Focused ion beams, previously restricted to the materials sciences and semiconductor fields, are rapidly becoming powerful tools for ultrastructural imaging of biological samples. Cell and tissue architecture, as preserved in plastic-embedded resin or in plunge-frozen form, can be investigated in three dimensions by scanning electron microscopy imaging of freshly created surfaces that result from the progressive removal of material using a focused ion beam. The focused ion beam can also be used as a sculpting tool to create specific specimen shapes such as lamellae or needles that can be analyzed further by transmission electron microscopy or by methods that probe chemical composition. Here we provide an in-depth primer to the application of focused ion beams in biology, including a guide to the practical aspects of using the technology, as well as selected examples of its contribution to the generation of new insights into subcellular architecture and mechanisms underlying host-pathogen interactions. PMID:26513553

  15. ION BEAM COLLIMATOR

    DOEpatents

    Langsdorf, A.S. Jr.

    1957-11-26

    A device is described for defining a beam of high energy particles wherein the means for defining the beam in the horizontal and vertical dimension are separately adjustable and the defining members are internally cooled. In general, the device comprises a mounting block having a central opening through which the beam is projected, means for rotatably supporting two pairs of beam- forming members, passages in each member for the flow of coolant; the beam- forming members being insulated from each other and the block, and each having an end projecting into the opening. The beam-forming members are adjustable and may be cooperatively positioned to define the beam passing between the end of the members. To assist in projecting and defining the beam, the member ends have individual means connected thereto for indicating the amount of charge collected thereon due to beam interception.

  16. Metal assisted anodic etching of silicon

    NASA Astrophysics Data System (ADS)

    Lai, Chang Quan; Zheng, Wen; Choi, W. K.; Thompson, Carl V.

    2015-06-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed

  17. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si. PMID:26059556

  18. Ion-beam Plasma Neutralization Interaction Images

    SciTech Connect

    Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

    2002-04-09

    Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented.

  19. MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon

    SciTech Connect

    Kamwanna, T.; Pasaja, N.; Yu, L.D.; Vilaithong, T.; Anders, A.; Singkarat, S.

    2008-08-01

    Amorphous carbon (a-C) films were deposited on Si(100) wafers by a filtered cathodicvacuum arc (FCVA) plasma source. A negative electrical bias was applied tothe silicon substrate in order to control the incident energy of carbon ions. Effects ofthe electrical bias on the a-C/Si interface characteristics were investigated by usingstandard Rutherford backscattering spectrometry (RBS) in the channeling modewith 2.1-MeV He2+ ions. The shape of the Si surface peaks of the RBS/channelingspectra reflects the degree of interface disorder due to atomic displacement fromthe bulk position of the Si crystal. Details of the analysis method developed aredescribed. It was found that the width of the a-C/Si interface increases linearlywith the substrate bias voltage but not the thickness of the a-C film.

  20. Ion beam microtexturing of surfaces

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1981-01-01

    Some recent work in surface microtecturing by ion beam sputtering is described. The texturing is accomplished by deposition of an impurity onto a substrate while simultaneously bombarding it with an ion beam. A summary of the theory regarding surface diffusion of impurities and the initiation of cone formation is provided. A detailed experimental study of the time-development of individual sputter cones is described. A quasi-liquid coating was observed that apparently reduces the sputter rate of the body of a cone compared to the bulk material. Experimental measurements of surface diffusion activation energies are presented for a variety of substrate-seed combinations and range from about 0.3 eV to 1.2 eV. Observations of apparent crystal structure in sputter cones are discussed. Measurements of the critical temperature for cone formation are also given along with a correlation of critical temperature with substrate sputter rate.

  1. Obliquely incident ion beam figuring

    NASA Astrophysics Data System (ADS)

    Zhou, Lin; Dai, Yifan; Xie, Xuhui; Li, Shengyi

    2015-10-01

    A new ion beam figuring (IBF) technique, obliquely incident IBF (OI-IBF), is proposed. In OI-IBF, the ion beam bombards the optical surface obliquely with an invariable incident angle instead of perpendicularly as in the normal IBF. Due to the higher removal rate in oblique incidence, the process time in OI-IBF can be significantly shortened. The removal rates at different incident angles were first tested, and then a test mirror was processed by OI-IBF. Comparison shows that in the OI-IBF technique with a 30 deg incident angle, the process time was reduced by 56.8%, while keeping the same figure correcting ability. The experimental results indicate that the OI-IBF technique is feasible and effective to improve the surface correction process efficiency.

  2. Ion beam inertial confinement target

    DOEpatents

    Bangerter, Roger O.; Meeker, Donald J.

    1985-01-01

    A target for implosion by ion beams composed of a spherical shell of frozen DT surrounded by a low-density, low-Z pusher shell seeded with high-Z material, and a high-density tamper shell. The target has various applications in the inertial confinement technology. For certain applications, if desired, a low-density absorber shell may be positioned intermediate the pusher and tamper shells.

  3. High temperature coefficient of resistance achieved by ion beam assisted sputtering with no heat treatment in V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf)

    SciTech Connect

    Vardi, Naor; Sharoni, Amos

    2015-11-15

    Thermal imaging based on room temperature bolometer sensors is a growing market, constantly searching for improved sensitivity. One important factor is the temperature coefficient of resistance (TCR), i.e., the sensitivity of the active material. Herein, the authors report the improved TCR properties attainable by the “ion beam assisted deposition” method for room temperature deposition. V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf) thin-film alloys were fabricated on 1 μm thermal SiO{sub 2} atop Si (100) substrates by reactive magnetron cosputtering at room temperature using a low energy ion source, aimed at the film, to insert dissociated oxygen species and increase film density. The authors studied the influence of deposition parameters such as oxygen partial pressure, V to M ratio, and power of the plasma source, on resistance and TCR. The authors show high TCR (up to −3.7% K{sup −1}) at 300 K, and excellent uniformity, but also an increase in resistance. The authors emphasize that samples were prepared at room temperature with no heat treatment, much simpler than common processes that require annealing at high temperatures. So, this is a promising fabrication route for uncooled microbolometers.

  4. The microstructure of continuously processed YBa{sub 2}Cu{sub 3}O{sub y} coated conductors with underlying CeO{sub 2} and ion-beam-assisted yttria-stabilized zirconia buffer layers

    SciTech Connect

    Holesinger, T. G.; Foltyn, S. R.; Arendt, P. N.; Kung, H.; Jia, Q. X.; Dickerson, R. M.; Dowden, P. C.; DePaula, R. F.; Groves, J. R.; Coulter, J. Y.

    2000-05-01

    The microstructural development of YBa{sub 2}Cu{sub 3}O{sub y} (Y-123) coated conductors based on the ion-beam-assisted deposition (IBAD) of yttria-stabilized zirconia (YSZ) to produce a biaxially textured template is presented. The architecture of the conductors was Y-123/CeO{sub 2}/IBAD YSZ/Inconel 625. A continuous and passivating Cr{sub 2}O{sub 3} layer forms between the YSZ layer and the Inconel substrate. CeO{sub 2} and Y-123 are closely lattice-matched, and misfit strain is accommodated at the YSZ/CeO{sub 2} interface. Localized reactions between the Y-123 film and the CeO{sub 2} buffer layer result in the formation of BaCeO{sub 3}, YCuO{sub 2}, and CuO. The positive volume change that occurs from the interfacial reaction may act as a kinetic barrier that limits the extent of the reaction. Excess copper and yttrium generated by the interfacial reaction appear to diffuse along grain boundaries and intercalate into Y-123 grains as single layers of the Y-247, Y-248, or Y-224 phases. The interfacial reactions do not preclude the attainment of high critical currents (I{sub c}) and current densities (J{sub c}) in these films nor do they affect to any appreciable extent the nucleation and alignment of the Y-123 film. (c) 2000 Materials Research Society.

  5. The visualization of current-limiting defects in YBa2Cu3O7 films on ion-beam assisted deposition buffer layers of yttrium-stabilized ZrO2 and Gd2Zr2O7

    NASA Astrophysics Data System (ADS)

    Born, V.; Hoffmann, J.; Sievers, S.; Thiele, Ch; Guth, K.; Freyhardt, H. C.; Jooss, Ch

    2004-11-01

    For the production of high-current-carrying, long-length superconducting wires or tapes, it is necessary to use biaxially textured metallic substrates or buffer layers. Though being highly textured, the deposited superconducting film exhibits a complex defect structure which (locally) suppresses the critical current and alternates characteristically the magnetic flux distribution seen in magneto-optical imaging. In this paper, we report on pulsed laser deposited YBaCuO films on biaxially textured yttrium-stabilized ZrO2 (YSZ) and Gd2Zr2O7 (GZO) buffers which were grown by ion beam assisted deposition (IBAD) on polycrystalline substrates. The current-limiting defect structure turns out to resemble closely a combination of a dense distribution of pinhole-like induced growth distortions and a fine grain boundary network. The current suppression is caused on the one hand by the dense packing of pinhole-like defects. On the other hand, we observe a substantial current anisotropy being related to the surface morphology of the buffer layers and the direction of the IBAD-beam.

  6. Ferroelectric and ferromagnetic properties of epitaxial BiFeO{sub 3}-BiMnO{sub 3} films on ion-beam-assisted deposited TiN buffered flexible Hastelloy

    SciTech Connect

    Xiong, J.; Matias, V.; Jia, Q. X.; Tao, B. W.; Li, Y. R.

    2014-05-07

    Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO{sub 3}){sub 0.5}:(BiMnO{sub 3}){sub 0.5} [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films are biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9 μC/cm{sup 2}. The magnetization of the BFO-BMO/LSMO is 62 emu/cc at room temperature.

  7. Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes with chemically assisted ion beam etched facets

    NASA Astrophysics Data System (ADS)

    Becerra, Daniel L.; Kuritzky, Leah Y.; Nedy, Joseph; Saud Abbas, Arwa; Pourhashemi, Arash; Farrell, Robert M.; Cohen, Daniel A.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

    2016-02-01

    Continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.

  8. Neon Ion Beam Lithography (NIBL).

    PubMed

    Winston, Donald; Manfrinato, Vitor R; Nicaise, Samuel M; Cheong, Lin Lee; Duan, Huigao; Ferranti, David; Marshman, Jeff; McVey, Shawn; Stern, Lewis; Notte, John; Berggren, Karl K

    2011-10-12

    Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm(2), ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography. PMID:21899279

  9. Influence of ion beam parameters on the electrical and optical properties of ion-assisted reactively evaporated vanadium dioxide thin films

    SciTech Connect

    Case, F.C.

    1987-07-01

    Large reductions in the phase transition temperature of vanadium dioxide thin films have been achieved in the past by doping with elements such as tungsten or niobium; however, considerable degradation of electrical and optical properties are routinely observed. In this investigation, a technique is described which significantly reduces the transition temperature to doped values, without sacrificing film quality. Vanadium oxide films were deposited at room temperature by ion-assisted reactive evaporation and subsequently annealed in flowing oxygen. Deposition parameters include a range of argon-to-oxygen ion ratios, ion energies and fluxes, and background oxygen pressures. The impact of these parameters on microstructural, electrical, and optical properties, as well as on transition temperature, will be discussed.

  10. ION BEAM FOCUSING MEANS FOR CALUTRON

    DOEpatents

    Backus, J.G.

    1959-06-01

    An ion beam focusing arrangement for calutrons is described. It provides a virtual focus of origin for the ion beam so that the ions may be withdrawn from an arc plasma of considerable width providing greater beam current and accuracy. (T.R.H.)

  11. Ion beam deposited protective films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1981-01-01

    Sputter deposition of adherent thin films on complex geometric surfaces by ion beam sources is examined in order to evaluate three different types of protective coatings for die materials. In the first experiment, a 30 cm diameter argon ion source was used to sputter deposit adherent metallic films up to eight microns thick on H-13 steel, and a thermal fatigue test specimen sputter deposited with metallic coatings one micron thick was immersed in liquid aluminum and cooled by water for 15,000 cycles to simulate operational environments. Results show that these materials do protect the steel by reducing thermal fatigue and thereby increasing die lifetime. The second experiment generated diamond-like carbon films using a dual beam ion source system that directed an eight cm argon ion source beam at the substrates. These films are still in the process of being evaluated for crystallinity, hardness and infrared absorption. The third experiment coated a fiber glass beam shield incorporated in the eight-cm diameter mercury ion thruster with molybdenum to ensure proper electrical and thermal properties. The coating maintained its integrity even under acceleration tests.

  12. Kinetic Simulations of Ion Beam Neutralization

    SciTech Connect

    Wang, Joseph

    2010-05-21

    Ion beam emission/neutralization is one of the most fundamental problems in spacecraft plasma interactions and electric propulsion. Although ion beam neutralization is readily achieved in experiments, the understanding of the underlying physical process remains at a rather primitive level. No theoretical or simulation models have convincingly explained the detailed neutralization mechanism, and no conclusions have been reached. This paper presents a fully kinetic simulation of ion beam neutralization and plasma beam propagation and discusses the physics of electron-ion coupling and the resulting propagation of a neutralized mesothermal plasma.

  13. Focused Ion Beam Technology for Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Reithmaier, J. P.; Bach, L.; Forchel, A.

    2003-08-01

    High-resolution proximity free lithography was developed using InP as anorganic resist for ion beam exposure. InP is very sensitive on ion beam irradiation and show a highly nonlinear dose dependence with a contrast function comparable to organic electron beam resists. In combination with implantation induced quantum well intermixing this new lithographic technique based on focused ion beams is used to realize high performance nano patterned optoelectronic devices like complex coupled distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers.

  14. Development of polyatomic ion beam system using liquid organic materials

    NASA Astrophysics Data System (ADS)

    Takaoka, G. H.; Nishida, Y.; Yamamoto, T.; Kawashita, M.

    2005-08-01

    We have developed a new type of polyatomic ion beam system using liquid organic materials such as octane and ethanol, which consists of a capillary type of nozzle, an ionizer, a mass-separator and a substrate holder. Ion current extracted after ionization was 430 μA for octane and 200 μA for ethanol, respectively. The mass-analysis was realized using a compact E × B mass filter, and the mass-analyzed ion beams were transferred toward the substrate. The ion current density at the substrate was a few μA/cm2 for the mass-separated ion species. Interactions of polyatomic ion beams with silicon (Si) surfaces were investigated by utilizing the ellipsometry measurement. It was found that the damaged layer thickness irradiated by the polyatomic ions with a mass number of about 40 was smaller than that by Ar ion irradiation at the same incident energy and ion fluence. The result indicated that the rupture of polyatomic ions occurred upon its impact on the Si surface with an incident energy larger than a few keV. In addition, the chemical modification of Si surfaces such as wettability could be achieved by adjusting the incident energy for the ethanol ions, which included all the fragment ions.

  15. Nanopillar growth by focused helium ion-beam-induced deposition.

    PubMed

    Chen, Ping; van Veldhoven, Emile; Sanford, Colin A; Salemink, Huub W M; Maas, Diederik J; Smith, Daryl A; Rack, Philip D; Alkemade, Paul F A

    2010-11-12

    A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH(3))(3)Pt(C(P)CH(3)) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current. Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions. PMID:20947951

  16. Metal-assisted chemical etch porous silicon formation method

    DOEpatents

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  17. Ion Beam Therapy in Europe

    NASA Astrophysics Data System (ADS)

    Kraft, Gerhard

    2009-03-01

    At present, seven facilities in Europe treat deep-seated tumors with particle beams, six with proton beams and one with carbon ions. Three of these facilities are in Moscow, St. Petersburg and Dubna, Russia. Other facilities include the TSL Uppsala, Sweden, CPO Orsay, France, and PSI Villigen, Switzerland, all for proton therapy, and GSI, Darmstadt, Germany, which utilizes carbon ions only. But only two of these facilities irradiate with scanned ion beams: the Paul Scherer Institute (PSI), Villigen (protons) and the Gesellschaft für Schwerionenforschung (GSI), Darmstadt. These two facilities are experimental units within physics laboratories and have developed the technique of intensity-modulated beam scanning in order to produce irradiation conforming to a 3-D target. There are three proton centers presently under construction in Munich, Essen and Orsay, and the proton facility at PSI has added a superconducting accelerator connected to an isocentric gantry in order to become independent of the accelerator shared with the physics research program. The excellent clinical results using carbon ions at National Institute of Radiological Science (NIRS) in Chiba and GSI have triggered the construction of four new heavy-ion therapy projects (carbon ions and protons), located in Heidelberg, Pavia, Marburg and Kiel. The projects in Heidelberg and Pavia will begin patient treatment in 2009, and the Marburg and Kiel projects will begin in 2010 and 2011, respectively. These centers use different accelerator designs but have the same kind of treatment planning system and use the same approach for the calculation of the biological effectiveness of the carbon ions as developed at GSI [1]. There are many other planned projects in the works. Do not replace the word "abstract," but do replace the rest of this text. If you must insert a hard line break, please use Shift+Enter rather than just tapping your "Enter" key. You may want to print this page and refer to it as a style

  18. Neurosurgical applications of ion beams

    NASA Astrophysics Data System (ADS)

    Fabrikant, Jacob I.; Levy, Richard P.; Phillips, Mark H.; Frankel, Kenneth A.; Lyman, John T.

    1989-04-01

    The program at Donner Pavilion has applied nuclear medicine research to the diagnosis and radiosurgical treatment of life-threatening intracranial vascular disorders that affect more than half a million Americans. Stereotactic heavy-charged-particle Bragg peak radiosurgery, using narrow beams of heavy ions, demonstrates superior biological and physical characteristics in brain over X-and γ-rays, viz., improved dose distribution in the Bragg peak and sharp lateral and distal borders and less scattering of the beam. Examination of CNS tissue response and alteration of cerebral blood-flow dynamics related to heavy-ion Bragg peak radiosurgery is carried out using three-dimensional treatment planning and quantitative imaging utilizing cerebral angiography, computerized tomography (CT), magnetic resonance imaging (MRI), cine-CT, xenon X-ray CT and positron emission tomography (PET). Also under examination are the physical properties of narrow heavy-ion beams for improving methods of dose delivery and dose distribution and for establishing clinical RBE/LET and dose-response relationships for human CNS tissues. Based on the evaluation and treatment with stereotactically directed narrow beams of heavy charged particles of over 300 patients, with cerebral angiography, CT scanning and MRI and PET scanning of selected patients, plus extensive clinical and neuroradiological followup, it appears that Stereotactic charged-particle Bragg peak radiosurgery obliterates intracranial arteriovenous malformations or protects against rebleeding with reduced morbidity and no mortality. Discussion will include the method of evaluation, the clinical research protocol, the Stereotactic neuroradiological preparation, treatment planning, the radiosurgery procedure and the protocol for followup. Emphasis will be placed on the neurological results, including the neuroradiological and clinical response and early and late delayed injury in brain leading to complications (including vasogenic edema

  19. ION BEAM ETCHING EFFECTS IN BIOLOGICAL MICROANALYSIS

    EPA Science Inventory

    Oxygen ion beam sputter etching used in SIMS has been shown to produce morphologic effects which have similarities and differences in comparison to rf plasma etching of biological specimens. Sputter yield variations resulting from structural microheterogeneity are illustrated (e....

  20. Biomedical applications of ion-beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Gibbons, D. F.; Vankampen, C. L.; Babbush, C. A.

    1979-01-01

    Microscopically-rough surface texture of various biocompatible alloys and polymers produced by ion-beam sputtering may result in improvements in response of hard or soft tissue to various surgical implants.

  1. Negative Ion Beam Extraction and Emittance

    SciTech Connect

    Holmes, Andrew J. T.

    2007-08-10

    The use of magnetic fields to both aid the production of negative ions and suppress the co-extracted electrons causes the emittance and hence the divergence of the negative ion beam to increase significantly due to the plasma non-uniformity from jxB drift. This drift distorts the beam-plasma meniscus and experimental results of the beam emittance are presented, which show that non-uniformity causes the square of the emittance to be proportional to the 2/3 power of the extracted current density. This can cause the divergence of the negative ion beam to be significantly larger than its positive ion counterpart. By comparing results from positive and negative ion beam emittances from the same source, it is also possible to draw conclusions about their vulnerability to magnetic effects. Finally emittances of caesiated and un-caesiated negative ion beams are compared to show how the surface and volume modes of production interact.

  2. Focused ion beam induced deflections of freestanding thin films

    NASA Astrophysics Data System (ADS)

    Kim, Y.-R.; Chen, P.; Aziz, M. J.; Branton, D.; Vlassak, J. J.

    2006-11-01

    Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50keV gallium focused ion beam for ion doses between 1014 and 1017ions/cm2. Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding depressions of comparable magnitude on the back side, thus indicating that what at first appeared to be protrusions are actually the result of membrane deflections. The shape in high-stress silicon nitride is remarkably flat-topped and differs from that in low-stress silicon nitride. Ion beam induced biaxial compressive stress generation, which is a known deformation mechanism for other amorphous materials at higher ion energies, is hypothesized to be the origin of the deflection. A continuum mechanical model based on this assumption convincingly reproduces the profiles for both low-stress and high-stress membranes and provides a family of unusual shapes that can be created by deflection of freestanding thin films under beam irradiation.

  3. Computer simulation of ion beam analysis of laterally inhomogeneous materials

    NASA Astrophysics Data System (ADS)

    Mayer, M.

    2016-03-01

    The program STRUCTNRA for the simulation of ion beam analysis charged particle spectra from arbitrary two-dimensional distributions of materials is described. The code is validated by comparison to experimental backscattering data from a silicon grating on tantalum at different orientations and incident angles. Simulated spectra for several types of rough thin layers and a chessboard-like arrangement of materials as example for a multi-phase agglomerate material are presented. Ambiguities between back-scattering spectra from two-dimensional and one-dimensional sample structures are discussed.

  4. Ion beam microtexturing and enhanced surface diffusion

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1982-01-01

    Ion beam interactions with solid surfaces are discussed with particular emphasis on microtexturing induced by the deliberate deposition of controllable amounts of an impurity material onto a solid surface while simultaneously sputtering the surface with an ion beam. Experimental study of the optical properties of microtextured surfaces is described. Measurements of both absorptance as a function of wavelength and emissivity are presented. A computer code is described that models the sputtering and ion reflection processes involved in microtexture formation.

  5. Ion beam processing of advanced electronic materials

    SciTech Connect

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B.; International Business Machines Corp., Yorktown Heights, NY . Thomas J. Watson Research Center; Oak Ridge National Lab., TN )

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases. (CBS)

  6. Biaxial texturing of inorganic photovoltaic thin films using low energy ion beam irradiation during growth

    SciTech Connect

    Groves, James R; De Paula, Raymond F; Hayes, Garrett H; Li, Joel B; Hammond, Robert H; Salleo, Alberto; Clemens, Bruce M

    2010-05-07

    We describe our efforts to control the grain boundary alignment in polycrystalline thin films of silicon by using a biaxially textured template layer of CaF{sub 2} for photovoltaic device applications. We have chosen CaF{sub 2} as a candidate material due to its close lattice match with silicon and its suitability as an ion beam assisted deposition (mAD) material. We show that the CaF{sub 2} aligns biaxially at a thickness of {approx}10 nm and, with the addition of an epitaxial CaF{sub 2} layer, has an in-plane texture of {approx}15{sup o}. Deposition of a subsequent layer of Si aligns on the template layer with an in-plane texture of 10.8{sup o}. The additional improvement of in-plane texture is similar to the behavior observed in more fully characterized IBAD materials systems. A germanium buffer layer is used to assist in the epitaxial deposition of Si on CaF{sub 2} template layers and single crystal substrates. These experiments confirm that an mAD template can be used to biaxially orient polycrystalline Si.

  7. Mass spectrometer and methods of increasing dispersion between ion beams

    DOEpatents

    Appelhans, Anthony D.; Olson, John E.; Delmore, James E.

    2006-01-10

    A mass spectrometer includes a magnetic sector configured to separate a plurality of ion beams, and an electrostatic sector configured to receive the plurality of ion beams from the magnetic sector and increase separation between the ion beams, the electrostatic sector being used as a dispersive element following magnetic separation of the plurality of ion beams. Other apparatus and methods are provided.

  8. Imaging Nanophotonic Modes of Microresonators using a Focused Ion Beam

    PubMed Central

    Twedt, Kevin A.; Zou, Jie; Davanco, Marcelo; Srinivasan, Kartik; McClelland, Jabez J.; Aksyuk, Vladimir A.

    2016-01-01

    Optical microresonators have proven powerful in a wide range of applications, including cavity quantum electrodynamics1–3, biosensing4, microfludics5, and cavity optomechanics6–8. Their performance depends critically on the exact distribution of optical energy, confined and shaped by the nanoscale device geometry. Near-field optical probes9 can image this distribution, but the physical probe necessarily perturbs the near field, which is particularly problematic for sensitive high quality factor resonances10,11. We present a new approach to mapping nanophotonic modes that uses a controllably small and local optomechanical perturbation introduced by a focused lithium ion beam12. An ion beam (radius ≈50 nm) induces a picometer-scale dynamic deformation of the resonator surface, which we detect through a shift in the optical resonance wavelength. We map five modes of a silicon microdisk resonator (Q≥20,000) with both high spatial and spectral resolution. Our technique also enables in-situ observation of ion implantation damage and relaxation dynamics in a silicon lattice13,14. PMID:27087832

  9. In Situ Mitigation of Subsurface and Peripheral Focused Ion Beam Damage via Simultaneous Pulsed Laser Heating.

    PubMed

    Stanford, Michael G; Lewis, Brett B; Iberi, Vighter; Fowlkes, Jason D; Tan, Shida; Livengood, Rick; Rack, Philip D

    2016-04-01

    Focused helium and neon ion (He(+)/Ne(+)) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+)/Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. These results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams. PMID:26864147

  10. In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating

    DOE PAGESBeta

    Stanford, Michael G.; Lewis, Brett B.; Iberi, Vighter O.; Fowlkes, Jason Davidson; Tan, Shida; Livengood, Rick; Rack, Philip D.

    2016-02-16

    Focused helium and neon ion (He(+)/Ne(+) ) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+) /Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposuremore » process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. In conclusion, these results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.« less

  11. In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Iberi, Vighter O.; Fowlkes, Jason Davidson; Tan, Shida; Livengood, Rick; Rack, Philip D.

    2016-01-01

    Focused helium and neon ion (He(+)/Ne(+) ) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+) /Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. In conclusion, these results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.

  12. Intense non-relativistic cesium ion beam

    SciTech Connect

    Lampel, M.C.

    1984-02-01

    The Heavy Ion Fusion group at Lawrence Berkeley Laboratory has constructed the One Ampere Cesium Injector as a proof of principle source to supply an induction linac with a high charge density and high brightness ion beam. This is studied here. An electron beam probe was developed as the major diagnostic tool for characterizing ion beam space charge. Electron beam probe data inversion is accomplished with the EBEAM code and a parametrically adjusted model radial charge distribution. The longitudinal charge distribution was not derived, although it is possible to do so. The radial charge distribution that is derived reveals an unexpected halo of trapped electrons surrounding the ion beam. A charge fluid theory of the effect of finite electron temperature on the focusing of neutralized ion beams (Nucl. Fus. 21, 529 (1981)) is applied to the problem of the Cesium beam final focus at the end of the injector. It is shown that the theory's predictions and assumptions are consistent with the experimental data, and that it accounts for the observed ion beam radius of approx. 5 cm, and the electron halo, including the determination of an electron Debye length of approx. 10 cm.

  13. Pseudo ribbon metal ion beam source

    SciTech Connect

    Stepanov, Igor B. Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

    2014-02-15

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

  14. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, Donald J.

    1988-01-01

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  15. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  16. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957 hr test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especially at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  17. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957-hour test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especialy at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  18. Variable-spot ion beam figuring

    NASA Astrophysics Data System (ADS)

    Wu, Lixiang; Qiu, Keqiang; Fu, Shaojun

    2016-03-01

    This paper introduces a new scheme of ion beam figuring (IBF), or rather variable-spot IBF, which is conducted at a constant scanning velocity with variable-spot ion beam collimated by a variable diaphragm. It aims at improving the reachability and adaptation of the figuring process within the limits of machine dynamics by varying the ion beam spot size instead of the scanning velocity. In contrast to the dwell time algorithm in the conventional IBF, the variable-spot IBF adopts a new algorithm, which consists of the scan path programming and the trajectory optimization using pattern search. In this algorithm, instead of the dwell time, a new concept, integral etching time, is proposed to interpret the process of variable-spot IBF. We conducted simulations to verify its feasibility and practicality. The simulation results indicate the variable-spot IBF is a promising alternative to the conventional approach.

  19. TOPICAL REVIEW Dosimetry for ion beam radiotherapy

    NASA Astrophysics Data System (ADS)

    Karger, Christian P.; Jäkel, Oliver; Palmans, Hugo; Kanai, Tatsuaki

    2010-11-01

    Recently, ion beam radiotherapy (including protons as well as heavier ions) gained considerable interest. Although ion beam radiotherapy requires dose prescription in terms of iso-effective dose (referring to an iso-effective photon dose), absorbed dose is still required as an operative quantity to control beam delivery, to characterize the beam dosimetrically and to verify dose delivery. This paper reviews current methods and standards to determine absorbed dose to water in ion beam radiotherapy, including (i) the detectors used to measure absorbed dose, (ii) dosimetry under reference conditions and (iii) dosimetry under non-reference conditions. Due to the LET dependence of the response of films and solid-state detectors, dosimetric measurements are mostly based on ion chambers. While a primary standard for ion beam radiotherapy still remains to be established, ion chamber dosimetry under reference conditions is based on similar protocols as for photons and electrons although the involved uncertainty is larger than for photon beams. For non-reference conditions, dose measurements in tissue-equivalent materials may also be necessary. Regarding the atomic numbers of the composites of tissue-equivalent phantoms, special requirements have to be fulfilled for ion beams. Methods for calibrating the beam monitor depend on whether passive or active beam delivery techniques are used. QA measurements are comparable to conventional radiotherapy; however, dose verification is usually single field rather than treatment plan based. Dose verification for active beam delivery techniques requires the use of multi-channel dosimetry systems to check the compliance of measured and calculated dose for a representative sample of measurement points. Although methods for ion beam dosimetry have been established, there is still room for developments. This includes improvement of the dosimetric accuracy as well as development of more efficient measurement techniques.

  20. Ion-beam technology and applications

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.; Robson, R. R.; Sovey, J. S.

    1977-01-01

    Ion propulsion research and development yields a mature technology that is transferable to a wide range of nonpropulsive applications, including terrestrial and space manufacturing. A xenon ion source was used for an investigation into potential ion-beam applications. The results of cathode tests and discharge-chamber experiments are presented. A series of experiments encompassing a wide range of potential applications is discussed. Two types of processes, sputter deposition, and erosion were studied. Some of the potential applications are thin-film Teflon capacitor fabrication, lubrication applications, ion-beam cleaning and polishing, and surface texturing.

  1. Potential biomedical applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Van Kampen, C. L.; Babbush, C. A.

    1976-01-01

    Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic prosthesis fixation, and dental implants.

  2. Potential biomedical applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Babbush, C. A.; Vankampen, C. L.

    1976-01-01

    Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic pros-thesis fixtion, and dental implants.

  3. Focused ion beam source method and apparatus

    DOEpatents

    Pellin, Michael J.; Lykke, Keith R.; Lill, Thorsten B.

    2000-01-01

    A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

  4. (abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

    NASA Technical Reports Server (NTRS)

    Al-Jumaily, Ghanim A.; Raouf, Nasrat A.; Edlou, Samad M.; Simons, John C.

    1994-01-01

    Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

  5. The measurement results of carbon ion beam structure extracted by bent crystal from U-70 accelerator

    NASA Astrophysics Data System (ADS)

    Afonin, A. G.; Barnov, E. V.; Britvich, G. I.; Chesnokov, Yu A.; Chirkov, P. N.; Durum, A. A.; Kostin, M. Yu; Maisheev, V. A.; Pitalev, V. I.; Reshetnikov, S. F.; Yanovich, A. A.; Nazhmudinov, R. M.; Kubankin, A. S.; Shchagin, A. V.

    2016-07-01

    The carbon ion +6C beam with energy 25 GeV/nucleon was extracted by bent crystal from the U-70 ring. The bent angle of silicon crystal was 85 mrad. About 2×105 particles for 109 circulated ions in the ring were observed in beam line 4a after bent crystal. Geometrical parameters, time structure and ion beam structure were measured. The ability of the bent monocrystal to extract and generate ion beam with necessary parameters for regular usage in physical experiments is shown in the first time.

  6. Adaptation of ion beam technology to microfabrication of solid state devices and transducers

    NASA Technical Reports Server (NTRS)

    Topich, J. A.

    1977-01-01

    It was found that ion beam texturing of silicon surfaces can be used to increase the effective surface area of MOS capacitors. There is, however, a problem with low dielectric breakdown. Preliminary work was begun on the fabrication of ion implanted resistors on textured surfaces and the potential improvement of wire bond strength by bonding to a textured surface. In the area of ion beam sputtering, the techniques for sputtering PVC were developed. A PVC target containing valinomycin was used to sputter an ion selective membrane on a field effect transistor to form a potassium ion sensor.

  7. Adaptation of ion beam technology to microfabrication of solid state devices and transducers

    NASA Technical Reports Server (NTRS)

    Topich, J. A.

    1978-01-01

    A number of areas were investigated to determine the potential uses of ion beam techniques in the construction of solid state devices and transducers and the packaging of implantable electronics for biomedical applications. The five areas investigated during the past year were: (1) diode-like devices fabricated on textured silicon; (2) a photolithographic technique for patterning ion beam sputtered PVC (polyvinyl chloride); (3) use of sputtered Teflon as a protective coating for implantable pressure sensors; (4) the sputtering of Macor to seal implantable hybrid circuits; and (5) the use of sputtered Teflon to immobilize enzymes.

  8. The role of space charge compensation for ion beam extraction and ion beam transport (invited)

    SciTech Connect

    Spädtke, Peter

    2014-02-15

    Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation.

  9. Oxide-assisted growth of silicon nanowires by carbothermal evaporation

    NASA Astrophysics Data System (ADS)

    Hutagalung, Sabar D.; Yaacob, Khatijah A.; Aziz, Azma F. Abdul

    2007-11-01

    Silicon nanowires (SiNWs) have successfully been synthesized by carbothermal evaporation method. By ramping-up the furnace system at 20 °C min -1 to 1100 °C for 6 h, the vertically aligned coexist with crooked SiNWs were achieved on the silicon substrate located at 12 cm from source material. The processing parameters such as temperature, heating rate, duration, substrate position and location are very important to produce SiNWs. Morphology and chemical composition of deposited products were investigated by field-emission scanning electron microscopy (FESEM) equipped with energy dispersive X-ray analysis (EDX). The existence of small sphere silicon oxide capped nanowires suggested that the formation of SiNWs was governed by oxide-assisted growth (OAG) mechanism.

  10. Photon assisted tunneling in pairs of silicon donors

    NASA Astrophysics Data System (ADS)

    Litvinenko, K. L.; Pavlov, S. G.; Hübers, H.-W.; Abrosimov, N. V.; Pidgeon, C. R.; Murdin, B. N.

    2014-06-01

    Shallow donors in silicon are favorable candidates for the implementation of solid-state quantum computer architectures because of the promising combination of atomiclike coherence properties and scalability from the semiconductor manufacturing industry. Quantum processing schemes require (among other things) controlled information transfer for readout. Here we demonstrate controlled electron tunneling at 10 K from P to Sb impurities and vice versa with the assistance of resonant terahertz photons.

  11. Focused ion beam micromilling and articles therefrom

    DOEpatents

    Lamartine, B.C.; Stutz, R.A.

    1998-06-30

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are disclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters. 6 figs.

  12. Heavy ion beams for inertial fusion

    SciTech Connect

    Godlove, T.F.; Herrmannsfeldt, W.B.

    1980-05-01

    The United States' program in inertial confinement fusion (ICF) is described in this paper, with emphasis on the studies of the use of intense high energy beams of heavy ions to provide the power and energy needed to initiate thermonuclear burn. Preliminary calculations of the transport of intense ion beams in an electrostatic quadrupole focussing structure are discussed.

  13. Metal Ion Sources for Ion Beam Implantation

    SciTech Connect

    Zhao, W. J.; Zhao, Z. Q.; Ren, X. T.

    2008-11-03

    In this paper a theme touched upon the progress of metal ion sources devoted to metal ion beam implantation (MIBI) will be reviewed. A special emphasis will be given to some kinds of ion sources such as ECR, MEVVA and Cluster ion sources. A novel dual hollow cathode metal ion source named DUHOCAMIS will be introduced and discussed.

  14. Focused ion beam micromilling and articles therefrom

    DOEpatents

    Lamartine, Bruce C.; Stutz, Roger A.

    1998-01-01

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are isclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters.

  15. Upgoing ion beams. I - Microscopic analysis

    NASA Astrophysics Data System (ADS)

    Kaufmann, R. L.; Kintner, P. M.

    1982-12-01

    The stability of electrostatic waves with frequencies near the hydrogen cyclotron frequency is investigated for an auroral plasma containing an ion beam by studying the relationship between low-frequency waves (0-1 kHz) and particles seen by the S3-3 satellite. It is concluded that only electrostatic hydrogen ion cyclotron (EHC) waves can be generated at the observed frequencies by the observed energetic particles, with the waves being produced either by drifting electrons or by the ion beam. In the model developed, ion beams are seen with their observed temperatures because they have evolved to a weakly unstable configuration in which the wave growth length is comparable to the width of the beam region. Waves are well confined to the beams because they are damped rapidly in the adjacent plasma, and the mirror effect can maintain a weak instability over a considerable altitude range. It is proposed that this effect is a source for strong pitch angle scattering, as well as an explanation for the nonexistence of downgoing ion beams.

  16. Applications of the Lithium Focused Ion Beam: Nanoscale Electrochemistry and Microdisk Mode Imaging

    NASA Astrophysics Data System (ADS)

    McGehee, William; Takeuchi, Saya; Michels, Thomas; Oleshko, Vladimir; Aksyuk, Vladimir; Soles, Christopher; McClelland, Jabez; Center for Nanoscale Science; Technology at NIST Collaboration; Materials Measurement Laboratory at NIST Collaboration

    2016-05-01

    The NIST-developed lithium Focused-Ion-Beam (LiFIB) system creates a low-energy, picoampere-scale ion beam from a photoionized gas of laser-cooled atoms. The ion beam can be focused to a <30 nm spot and scanned across a sample. This enables imaging through collection of ion-induced secondary electrons (similar to SEM) as well as the ability to selectively deposit lithium-ions into nanoscale volumes in a material. We exploit this second ability of the LiFIB to selectively ''titrate'' lithium ions as a means of probing the optical modes in microdisk resonators as well as for exploring nanoscale, Li-ion electrochemistry in battery-relevant materials. We present an overview of both measurements, including imaging of the optical mode in a silicon microdisk and a comparison of FIB and electrochemical lithiation of tin.

  17. Intense Pulsed Heavy Ion Beam Technology

    NASA Astrophysics Data System (ADS)

    Masugata, Katsumi; Ito, Hiroaki

    Development of intense pulsed heavy ion beam accelerator technology is described for the application of materials processing. Gas puff plasma gun and vacuum arc discharge plasma gun were developed as an active ion source for magnetically insulated pulsed ion diode. Source plasma of nitrogen and aluminum were successfully produced with the gas puff plasma gun and the vacuum arc plasma gun, respectively. The ion diode was successfully operated with gas puff plasma gun at diode voltage 190 kV, diode current 2.2 kA and nitrogen ion beam of ion current density 27 A/cm2 was obtained. The ion composition was evaluated by a Thomson parabola spectrometer and the purity of the nitrogen ion beam was estimated to be 86%. The diode also operated with aluminum ion source of vacuum arc plasma gun. The ion diode was operated at 200 kV, 12 kA, and aluminum ion beam of current density 230 A/cm2 was obtained. The beam consists of aluminum ions (Al(1-3)+) of energy 60-400 keV, and protons (90-130 keV), and the purity was estimated to be 89 %. The development of the bipolar pulse accelerator (BPA) was reported. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. The generator was tested with dummy load of 7.5 ohm, bipolar pulses of -138 kV, 72 ns (1st pulse) and +130 kV, 70 ns (2nd pulse) were succesively generated. By applying the bipolar pulse to the drift tube of the BPA, nitrogen ion beam of 2 A/cm2 was observed in the cathode, which suggests the bipolar pulse acceleration.

  18. Epitaxial pentacene films grown on the surface of ion-beam-processed gate dielectric layer

    NASA Astrophysics Data System (ADS)

    Chou, W. Y.; Kuo, C. W.; Cheng, H. L.; Mai, Y. S.; Tang, F. C.; Lin, S. T.; Yeh, C. Y.; Horng, J. B.; Chia, C. T.; Liao, C. C.; Shu, D. Y.

    2006-06-01

    The following research describes the process of fabrication of pentacene films with submicron thickness, deposited by thermal evaporation in high vacuum. The films were fabricated with the aforementioned conditions and their characteristics were analyzed using x-ray diffraction, scanning electron microscopy, polarized Raman spectroscopy, and photoluminescence. Organic thin-film transistors (OTFTs) were fabricated on an indium tin oxide coated glass substrate, using an active layer of ordered pentacene molecules, which were grown at room temperature. Pentacene film was aligned using the ion-beam aligned method, which is typically employed to align liquid crystals. Electrical measurements taken on a thin-film transistor indicated an increase in the saturation current by a factor of 15. Pentacene-based OTFTs with argon ion-beam-processed gate dielectric layers of silicon dioxide, in which the direction of the ion beam was perpendicular to the current flow, exhibited a mobility that was up to an order of magnitude greater than that of the controlled device without ion-beam process; current on/off ratios of approximately 106 were obtained. Polarized Raman spectroscopy investigation indicated that the surface of the gate dielectric layer, treated with argon ion beam, enhanced the intermolecular coupling of pentacene molecules. The study also proposes the explanation for the mechanism of carrier transportation in pentacene films.

  19. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  20. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  1. Surface morphology and resistivity of aluminum oxide films prepared by plasma CVD combined with ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Nakai, H.; Shinohara, J.; Sassa, T.; Ikegami, Y.

    1997-01-01

    Plasma CVD combined with simultaneous ion beams has been developed in order to prepare ceramic insulating films which have strong force of adhesion and higher electric resistivity at high temperatures. Aluminum oxide (Al 2O 3) films were deposited on nickel based superalloy (Inconel 718) by thermal CVD, plasma CVD and ion beam assisted plasma CVD at the several substrate temperatures. The surface morphology of these films was analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was confirmed that, by ion beam irradiation, the extent of crystallization was enhanced at lower substrate temperature and grain size became smaller. The electric resistivity was measured in the temperature range of RT to 800°C. The film, deposited by ion beam assisted plasma CVD at 800°C, had higher electric resistivity than the films by conventional CVD.

  2. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO2 superlattice-based memory devices

    NASA Astrophysics Data System (ADS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-03-01

    This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO2 superlattice-based memory devices with an improved memory window and retention properties. The SiO2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  3. High-powered pulsed-ion-beam acceleration and transport

    SciTech Connect

    Humphries, S. Jr.; Lockner, T.R.

    1981-11-01

    The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized.

  4. Accessing defect dynamics using intense, nanosecond pulsed ion beams

    SciTech Connect

    Persaud, A.; Barnard, J. J.; Guo, H.; Hosemann, P.; Lidia, S.; Minor, A. M.; Seidl, P. A.; Schenkel, T.

    2015-06-18

    Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystal Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.

  5. Accessing defect dynamics using intense, nanosecond pulsed ion beams

    DOE PAGESBeta

    Persaud, A.; Barnard, J. J.; Guo, H.; Hosemann, P.; Lidia, S.; Minor, A. M.; Seidl, P. A.; Schenkel, T.

    2015-06-18

    Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystalmore » Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.« less

  6. Formation of cobalt silicide by ion beam mixing

    NASA Astrophysics Data System (ADS)

    Min, Ye; Burte, Edmund P.; Ryssel, Heiner

    1991-07-01

    The formation of cobalt silicides by arsenic ion implantation through a cobalt film which causes a mixing of the metal with the silicon substrate was investigated. Furthermore, cobalt suicides were formed by rapid thermal annealing (RTA). Sheet resistance and silicide phases of implanted Co/Si samples depend on the As dose. Ion beam mixing at doses higher than 5 × 10 15 cm -2 and RTA at temperatures T ⩾ 900° C result in almost equal values of Rs. RBS and XRD spectra of these samples illustrate the formation of a homogeneous CoSi 2 layer. Significant lateral growth of cobalt silicide beyond the edge of patterned SiO 2 was observed in samples which were only subjected to an RTA process ( T ⩾ 900 ° C), while this lateral suicide growth could be reduced efficiently by As implantation prior to RTA.

  7. Atomic-scale thermocapillary flow in focused ion beam milling

    SciTech Connect

    Das, K.; Johnson, H. T.; Freund, J. B.

    2015-05-15

    Focused ion beams provide a means of nanometer-scale manufacturing and material processing, which is used for applications such as forming nanometer-scale pores in thin films for DNA sequencing. We investigate such a configuration with Ga{sup +} bombardment of a Si thin-film target using molecular dynamics simulation. For a range of ion intensities in a realistic configuration, a recirculating melt region develops, which is seen to flow with a symmetrical pattern, counter to how it would flow were it driven by the ion momentum flux. Such flow is potentially important for the shape and composition of the formed structures. Relevant stress scales and estimated physical properties of silicon under these extreme conditions support the importance thermocapillary effects. A flow model with Marangoni forcing, based upon the temperature gradient and geometry from the atomistic simulation, indeed reproduces the flow and thus could be used to anticipate such flows and their influence in applications.

  8. Photo-induced trimming of chalcogenide-assisted silicon waveguides.

    PubMed

    Canciamilla, Antonio; Morichetti, Francesco; Grillanda, Stefano; Velha, Philippe; Sorel, Marc; Singh, Vivek; Agarwal, Anu; Kimerling, Lionel C; Melloni, Andrea

    2012-07-01

    A chalcogenide-assisted silicon waveguide is realized by depositing a thin layer of A(2)S(3) glass onto a conventional silicon on insulator optical waveguide. The photosensitivity of the chalcogenide is exploited to locally change the optical properties of the waveguide through exposure to visible light radiation. Waveguide trimming is experimentally demonstrated by permanently shifting the resonant wavelength of a microring resonator by 6.7 nm, corresponding to an effective index increase of 1.6·10(-2). Saturation effects, trimming range, velocity and temporal stability of the process are discussed in details. Results demonstrate that photo-induced treatments can be exploited for a post-fabrication compensation of fabrication tolerances, as well as to set and reconfigure the circuit response. PMID:22772270

  9. Laser-cooled continuous ion beams

    SciTech Connect

    Schiffer, J.P.; Hangst, J.S.; Nielsen, J.S.

    1995-08-01

    A collaboration with a group in Arhus, Denmark, using their storage ring ASTRID, brought about better understanding of ion beams cooled to very low temperatures. The longitudinal Schottky fluctuation noise signals from a cooled beam were studied. The fluctuation signals are distorted by the effects of space charge as was observed in earlier measurements at other facilities. However, the signal also exhibits previously unobserved coherent components. The ions` velocity distribution, measured by a laser fluorescence technique suggests that the coherence is due to suppression of Landau damping. The observed behavior has important implications for the eventual attainment of a crystalline ion beam in a storage ring. A significant issue is the transverse temperature of the beam -- where no direct diagnostics are available and where molecular dynamics simulations raise interesting questions about equilibrium.

  10. Rhenium ion beam for implantation into semiconductors

    SciTech Connect

    Kulevoy, T. V.; Seleznev, D. N.; Alyoshin, M. E.; Kraevsky, S. V.; Yakushin, P. E.; Khoroshilov, V. V.; Gerasimenko, N. N.; Smirnov, D. I.; Fedorov, P. A.; Temirov, A. A.

    2012-02-15

    At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.