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Sample records for junction solar cell

  1. Quantum junction solar cells.

    PubMed

    Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. PMID:22881834

  2. Three-junction solar cell

    DOEpatents

    Ludowise, Michael J.

    1986-01-01

    A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

  3. Improved Solar-Cell Tunnel Junction

    NASA Technical Reports Server (NTRS)

    Daud, T.; Kachare, A.

    1986-01-01

    Efficiency of multiple-junction silicon solar cells increased by inclusion of p+/n+ tunnel junctions of highly doped GaP between component cells. Relatively low recombination velocity at GaP junction principal reason for recommending this material. Relatively wide band gap also helps increase efficiency by reducing optical losses.

  4. Solar Cells With Multiple Small Junctions

    NASA Technical Reports Server (NTRS)

    Daud, T.; Koliwad, K. M.

    1985-01-01

    Concept for improving efficiency of photovoltaic solar cells based on decreasing p/n junction area in relation to total surface area of cell. Because of reduced junction area, surface leakage drops and saturation current density decreases. Surface passivation helps to ensure short-circuit current remains at high value and response of cells to blue light increases.

  5. Multi-junction solar cell device

    DOEpatents

    Friedman, Daniel J.; Geisz, John F.

    2007-12-18

    A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

  6. Plasmon Enhanced Hetero-Junction Solar Cell

    NASA Astrophysics Data System (ADS)

    Long, Gen; Ching, Levine; Sadoqi, Mostafa; Xu, Huizhong

    2015-03-01

    Here we report a systematic study of plasmon-enhanced hetero-junction solar cells made of colloidal quantum dots (PbS) and nanowires (ZnO), with/without metal nanoparticles (Au). The structure of solar cell devices was characterized by AFM, SEM and profilometer, etc. The power conversion efficiencies of solar cell devices were characterized by solar simulator (OAI TriSOL, AM1.5G Class AAA). The enhancement in the photocurrent due to introduction of metal nanoparticles was obvious. We believe this is due to the plasmonic effect from the metal nanoparticles. The correlation between surface roughness, film uniformity and device performance was also studied.

  7. Electron irradiation of tandem junction solar cells

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.; Miyahira, T. F.; Scott-Monck, J. A.

    1979-01-01

    The electrical behavior of 100 micron thick tandem junction solar cells manufactured by Texas Instruments was studied as a function of 1 MeV electron fluence, photon irradiation, and 60 C annealing. These cells are found to degrade rapidly with radiation, the most serious loss occurring in the blue end of the cell's spectral response. No photon degradation was found to occur, but the cells did anneal a small amount at 60 C.

  8. Tandem junction amorphous silicon solar cells

    DOEpatents

    Hanak, Joseph J.

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  9. Studies of silicon PN junction solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1975-01-01

    Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

  10. Studies of silicon pn junction solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.

    1977-01-01

    Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

  11. Radial pn Junction, Wire Array Solar Cells

    NASA Astrophysics Data System (ADS)

    Kayes, Brendan Melville

    Radial pn junctions are potentially of interest in photovoltaics as a way to decouple light absorption from minority carrier collection. In a traditional planar design these occur in the same dimension, and this sets a lower limit on absorber material quality, as cells must both be thick enough to effectively absorb the solar spectrum while also having minority-carrier diffusion lengths long enough to allow for efficient collection of the photo-generated carriers. Therefore, highly efficient photovoltaic devices currently require highly pure materials and expensive processing techniques, while low cost devices generally operate at relatively low efficiency. The radial pn junction design sets the direction of light absorption perpendicular to the direction of minority-carrier transport, allowing the cell to be thick enough for effective light absorption, while also providing a short pathway for carrier collection. This is achieved by increasing the junction area, in order to decrease the path length any photogenerated minority carrier must travel, to be less than its minority carrier diffusion length. Realizing this geometry in an array of semiconducting wires, by for example depositing a single-crystalline inorganic semiconducting absorber layer at high deposition rates from the gas phase by the vapor-liquid-solid (VLS) mechanism, allows for a "bottom up" approach to device fabrication, which can in principle dramatically reduce the materials costs associated with a cell.

  12. Studies of silicon p-n junction solar cells

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Lindholm, F. A.

    1979-01-01

    To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

  13. Elongated nanostructures for radial junction solar cells.

    PubMed

    Kuang, Yinghuan; Vece, Marcel Di; Rath, Jatindra K; Dijk, Lourens van; Schropp, Ruud E I

    2013-10-01

    In solar cell technology, the current trend is to thin down the active absorber layer. The main advantage of a thinner absorber is primarily the reduced consumption of material and energy during production. For thin film silicon (Si) technology, thinning down the absorber layer is of particular interest since both the device throughput of vacuum deposition systems and the stability of the devices are significantly enhanced. These features lead to lower cost per installed watt peak for solar cells, provided that the (stabilized) efficiency is the same as for thicker devices. However, merely thinning down inevitably leads to a reduced light absorption. Therefore, advanced light trapping schemes are crucial to increase the light path length. The use of elongated nanostructures is a promising method for advanced light trapping. The enhanced optical performance originates from orthogonalization of the light's travel path with respect to the direction of carrier collection due to the radial junction, an improved anti-reflection effect thanks to the three-dimensional geometric configuration and the multiple scattering between individual nanostructures. These advantages potentially allow for high efficiency at a significantly reduced quantity and even at a reduced material quality, of the semiconductor material. In this article, several types of elongated nanostructures with the high potential to improve the device performance are reviewed. First, we briefly introduce the conventional solar cells with emphasis on thin film technology, following the most commonly used fabrication techniques for creating nanostructures with a high aspect ratio. Subsequently, several representative applications of elongated nanostructures, such as Si nanowires in realistic photovoltaic (PV) devices, are reviewed. Finally, the scientific challenges and an outlook for nanostructured PV devices are presented. PMID:24088584

  14. Semiconductor liquid-junction solar cell

    SciTech Connect

    Parkinson, B.A.

    1982-10-29

    A semiconductor liquid junction photocell in which the photocell is in the configuration of a light concentrator and in which the electrolytic solution both conducts current and facilitates the concentration of incident solar radiation onto the semiconductor. The photocell may be in the configuration of a non-imaging concentrator such as a compound parabolic concentrator, or an imaging concentrator such as a lens.

  15. Improved High/Low Junction Silicon Solar Cell

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

    1986-01-01

    Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

  16. Analytical modeling of the radial pn junction nanowire solar cells

    NASA Astrophysics Data System (ADS)

    Ali, Nouran M.; Allam, Nageh K.; Abdel Haleem, Ashraf M.; Rafat, Nadia H.

    2014-07-01

    In photovoltaic solar cells, radial p-n junctions have been considered a very promising structure to improve the carrier collection efficiency and accordingly the conversion efficiency. In the present study, the semiconductor equations, namely Poisson's and continuity equations for a cylindrical p-n junction solar cell, have been solved analytically. The analytical model is based on Green's function theory to calculate the current density, open circuit voltage, fill factor, and conversion efficiency. The model has been used to simulate p-n and p-i-n silicon radial solar cells. The validity and accuracy of the present simulator were confirmed through a comparison with previously published experimental and numerical reports.

  17. The effects of junction depth and impurity concentration on ion-implanted, junction solar cells

    SciTech Connect

    Neville, R.C.

    1980-12-01

    This paper presents data resulting from tests on the experimental optimization of the ion-implanted region of horizontal junction, silicon, ion-implanted P+N and N+P solar cells. The experimental data are compared to theoretical predictions based on a simple model and to data obtained with diffused junction solar cells (1). Optimum junction depth and average ion-implanted layer concentration for ion-implanted, silicon, PN junction solar cells under non-concentrated sunlight (approximately AMI conditions) appear to be 0.5..mu..m and 5X10/sup 18/ atoms/cm/sup 3/, respectively. Variation in solar cell efficiency with junction depth is rapid between 0.1 and 0.5..mu..m. Variations of efficiency in response to changes in concentration are minimal over the range tested. Experiments under various illumination conditions indicate increasing efficiency as insolation increases from 83mw/cm/sup 2/ to 100 mw/cm/sup 2/. Comparison with diffused junction, silicon solar cells indicates a potentially greater efficiency for ion-implanted solar cells. However, variation in efficiency between individual solar cells is sufficiently great to warrant further experimentation before reaching any final conclusions.

  18. Non PN junction solar cells using carrier selective contacts

    NASA Astrophysics Data System (ADS)

    Bowden, Stuart; Ghosh, Kunal; Honsberg, Christiana

    2013-03-01

    A novel device concept utilizing the approach of selectively extracting carriers at the respective contacts is outlined in the work. The dominant silicon solar cell technology is based on a diffused, top-contacted p-n junction on a relatively thick silicon wafer for both commercial and laboratory solar cells. The VOC and hence the efficiency of a diffused p-n junction solar cell is limited by the emitter recombination current and a value of 720 mV is considered to be the upper limit. The value is more than 100 mV smaller than the thermodynamic limit of VOC as applicable for silicon based solar cells. Also, in diffused junction the use of thin wafers (< 50 um) are problematic because of the requirement of high temperature processing steps. But a number of roadmaps have identified solar cells manufactured on thinner silicon wafers to achieve lower cost and higher efficiency. The carrier selective contact device provides a novel alternative to diffused p-n junction solar cells by eliminating the need for complementary doping to form the emitter and hence it allows the solar cells to achieve a VOC of greater than 720 mV. Also, the complete device structure can be fabricated with low temperature thin film deposition or organic coating on silicon substrates and thus epitaxially grown silicon or kerfless silicon, in addition to standard silicon wafers can be utilized.

  19. Ferroelectric-semiconductor photovoltaics: Non-PN junction solar cells

    NASA Astrophysics Data System (ADS)

    Liu, Fude; Wang, Wentao; Wang, Lei; Yang, Guandong

    2014-03-01

    Traditional positive-negative (PN) junction based solar cells have many limitations. Herein, we introduce ferroelectric-semiconductor solar cells that use the bound surface charges of the ferroelectric for achieving charge separation in the semiconductor. The feasibility of the new concept cells was verified both experimentally and theoretically in detail. The new cells are unique in that free charge carriers and fixed charge carriers are physically separated from each other. The feature allows us to go beyond traditional junction-based structures and have more freedom in material selection, device design, and fabrication.

  20. Development and fabrication of a solar cell junction processing system

    NASA Technical Reports Server (NTRS)

    1984-01-01

    A processing system capable of producing solar cell junctions by ion implantation followed by pulsed electron beam annealing was developed and constructed. The machine was to be capable of processing 4-inch diameter single-crystal wafers at a rate of 10(7) wafers per year. A microcomputer-controlled pulsed electron beam annealer with a vacuum interlocked wafer transport system was designed, built and demonstrated to produce solar cell junctions on 4-inch wafers with an AMI efficiency of 12%. Experiments showed that a non-mass-analyzed (NMA) ion beam could implant 10 keV phosphorous dopant to form solar cell junctions which were equivalent to mass-analyzed implants. A NMA ion implanter, compatible with the pulsed electron beam annealer and wafer transport system was designed in detail but was not built because of program termination.

  1. Surface photovoltage method extended to silicon solar cell junction

    NASA Technical Reports Server (NTRS)

    Wang, E. Y.; Baraona, C. R.; Brandhorst, H. W., Jr.

    1974-01-01

    The conventional surface photovoltage (SPV) method is extended to the measurement of the minority carrier diffusion length in diffused semiconductor junctions of the type used in a silicon solar cell. The minority carrier diffusion values obtained by the SPV method agree well with those obtained by the X-ray method. Agreement within experimental error is also obtained between the minority carrier diffusion lengths in solar cell diffusion junctions and in the same materials with n-regions removed by etching, when the SPV method was used in the measurements.

  2. Tunnel junctions for InP-on-Si solar cells

    NASA Technical Reports Server (NTRS)

    Keavney, C.; Vernon, S.; Haven, V.

    1991-01-01

    Growing, by metalorganic chemical vapor deposition, a tunnel junction is described, which makes possible and ohmic back contact in an n-on-p InP solar cell on a silicon substrate. The junction between heavily doped layers of p-type InGaAs and n-type InP shows resistance low enough not to affect the performance of these cells. InP solar cells made on n-type Si substrates with this structure were measured with an efficiency of 9.9 percent. Controls using p-type GaAs substrates showed no significant difference in cell performance, indicating that the resistance associated with the tunnel junction is less than about 0.1 ohm/sq cm.

  3. PN junction fabrication of solar cells and integration with metamaterials

    NASA Astrophysics Data System (ADS)

    Enemuo, Amarachukwu; Crouse, David T.; Crouse, Michael

    2011-05-01

    Silicon is the primary material used for the fabrication of solar cells and it is responsible for about 40% of the cost. Metamaterials show promise in enhancing the performance of silicon solar cells thus, improving the efficiency. Here we report on the fabrication of a broadband, antireflective, conductive metamaterial capable of channeling light into a solar cell. As a precursor to making the metamaterial, standard p-n junctions were fabricated. Conventional phosphorus oxychloride (POCl3) furnace diffusion was used to create the p-n junction. When the p-n junction was forward biased, the measured current exhibited a diode characteristic. The measured photocurrent response yielded an open circuit voltage for the p-n junction at 0.48 VDC. The metamaterial film was fabricated, placed atop the p-n junction and characterized. Initial tests showed that the metamaterial antireflective properties were on par with those of standard industrial single-layer silicon nitride coatings. Further testing is being performed to assess the full optical and electrical performance of the metamaterial film.

  4. Back-contact vertical-junction solar cell and method

    SciTech Connect

    Carver, M.W.; Kolesar, E.S. Jr.

    1991-11-26

    This paper describes vertical-junction back contact solar cell apparatus. It comprises: a wafer of semiconductor material having upward and downward facing surfaces and predetermined thickness, first conductivity type dopant, crystal orientation, and concentration; an array of radiant energy capturing vertical walled and tilted flat bottomed cavity members disposed in rows across the semiconductor wafer upward facing surface with each of the cavities including an internal surface area received layer of pn-junction forming second conductivity type dopant containing semiconductor; a first grid of electrically interconnected electrodes dispersed across the downward facing wafer surface in surface contact with first electrical polarity current collection regions of each the pn-junction inclusive cavity member; a second grid of electrically interconnected electrodes electrically segregated from the first grid and dispersed across the downward facing wafer surface in surface contact with second electrical polarity current collection regions of each the pn-junction inclusive cavity member.

  5. Development and fabrication of a solar cell junction processing system

    NASA Technical Reports Server (NTRS)

    Bunker, S.

    1981-01-01

    A solar cell junction processing system was developed and fabricated. A pulsed electron beam for the four inch wafers is being assembled and tested, wafers were successfully pulsed, and solar cells fabricated. Assembly of the transport locks is completed. The transport was operated successfully but not with sufficient reproducibility. An experiment test facility to examine potential scaleup problems associated with the proposed ion implanter design was constructed and operated. Cells were implanted and found to have efficiency identical to the normal Spire implant process.

  6. Research on gallium arsenide diffused junction solar cells

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandi, S. K.

    1984-01-01

    The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.

  7. Low-high junction theory applied to solar cells

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

    1973-01-01

    Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.

  8. Ion implantation of solar cell junctions without mass analysis

    NASA Technical Reports Server (NTRS)

    Fitzgerald, D.; Tonn, D. G.

    1981-01-01

    This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

  9. Towards understanding junction degradation in cadmium telluride solar cells

    SciTech Connect

    Nardone, Marco

    2014-06-21

    A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

  10. Low-high junction theory applied to solar cells

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

    1974-01-01

    Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

  11. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  12. High efficiency quadruple junction solar cells

    NASA Astrophysics Data System (ADS)

    Bestam, R.; Aissat, A.; Vilcot, J. P.

    2016-03-01

    This work focuses on the modeling and optimization of a structure based on InGaP/InGaAs/InGaAsN/Ge for photovoltaic. In this study we took into consideration the concentration effect of alloys x (In) and y (N) on the strain, the bandgap, the absorption and structure efficiency. It has been shown that the concentration of indium varies the strain and the bandgap. These two parameters change considerably the yield. Also it optimized the effect of alloys on the total absorption of the structure. For a concentration of indium x = 0.40 and y = 0.03 we had a absorption coefficient which is equal to 2 × 106 cm-1. We have found 50% efficiency for the multi-junction structure based on In0.55Ga0.45P/In0.40Ga0.60As/In0.30Ga0.70As0.97N0.03/Ge. To achieve a reliable high efficiency multi-junction structure, we just need to optimize the concentrations of different alloys.

  13. Antireflection Coating Design for Series Interconnected Multi-Junction Solar Cells

    SciTech Connect

    AIKEN,DANIEL J.

    1999-11-29

    AR coating design for multi-junction solar cells can be more challenging than in the single junction case. Reasons for this are discussed. Analytical expressions used to optimize AR coatings for single junction solar cells are extended for use in monolithic, series interconnected multi-junction solar cell AR coating design. The result is an analytical expression which relates the solar cell performance (through J{sub SC}) directly to the AR coating design through the device reflectance. It is also illustrated how AR coating design can be used to provide an additional degree of freedom for current matching multi-junction devices.

  14. Crystalline Silicon/Graphene Oxide Hybrid Junction Solar Cells

    NASA Astrophysics Data System (ADS)

    Liu, Qiming; Wanatabe, Fumiya; Hoshino, Aya; Ishikawa, Ryo; Gotou, Takuya; Ueno, Keiji; Shirai, Hajime

    2012-10-01

    Soluble graphene oxide (GO) and plasma-reduced (pr-) GO were investigated using crystalline silicon (c-Si) (100)/GO/pr-GO hybrid junction solar cells. Their photovoltaic performances were compared with those of c-Si/GO/pristine conductive poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) heterojunction and c-Si/PEDOT:PSS:GO composite devices. The c-Si/GO/pr-GO and conductive PEDOT:PSS/Al heterojunction solar cells showed power conversion efficiencies of 6.5 and 8.2%, respectively, under illumination with AM 1.5 G 100 mW/cm2 simulated solar light. A higher performance of 10.7% was achieved using the PEDOT:PSS:GO (12.5 wt %) composite device. These findings imply that soluble GO, pr-GO, and the PEDOT:PSS:GO composite are promising materials as hole transport and transparent conductive layers for c-Si/organic hybrid junction solar cells.

  15. Full potential of radial junction Si thin film solar cells with advanced junction materials and design

    NASA Astrophysics Data System (ADS)

    Qian, Shengyi; Misra, Soumyadeep; Lu, Jiawen; Yu, Zhongwei; Yu, Linwei; Xu, Jun; Wang, Junzhuan; Xu, Ling; Shi, Yi; Chen, Kunji; Roca i Cabarrocas, Pere

    2015-07-01

    Combining advanced materials and junction design in nanowire-based thin film solar cells requires a different thinking of the optimization strategy, which is critical to fulfill the potential of nano-structured photovoltaics. Based on a comprehensive knowledge of the junction materials involved in the multilayer stack, we demonstrate here, in both experimental and theoretical manners, the potential of hydrogenated amorphous Si (a-Si:H) thin film solar cells in a radial junction (RJ) configuration. Resting upon a solid experimental basis, we also assess a more advanced tandem RJ structure with radially stacking a-Si:H/nanocrystalline Si (nc-Si:H) PIN junctions, and show that a balanced photo-current generation with a short circuit current density of Jsc = 14.2 mA/cm2 can be achieved in a tandem RJ cell, while reducing the expensive nc-Si:H absorber thickness from 1-3 μ m (in planar tandem cells) to only 120 nm. These results provide a clearly charted route towards a high performance Si thin film photovoltaics.

  16. Development of thin wraparound junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Ho, F.; Iles, P. A.

    1981-01-01

    The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

  17. Temperature Characteristics Analysis of Triple-Junction Solar Cell under Concentrated Conditions using Spice Diode Model

    NASA Astrophysics Data System (ADS)

    Sakurada, Yuya; Ota, Yasuyuki; Nishioka, Kensuke

    2011-12-01

    Using spice diode model, the temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under concentrated light conditions were analyzed in detail. The current-voltage (I-V) characteristics of the single-junction solar cells (InGaP, InGaAs, and Ge solar cells) were measured at various temperatures. From dark I-V characteristics of each single-junction solar cell, the diode parameters and temperature exponents were extracted. The extracted diode parameters and temperature exponents were applied to the equivalent circuit model for the triple-junction solar cell, and the solar cell performance was calculated with considering the temperature characteristics of series resistance. There was good agreement between the measured and calculated I-V characteristics of the triple-junction solar cell at various temperatures under concentrated light conditions.

  18. Thermodynamic limit of bifacial double-junction tandem solar cells

    NASA Astrophysics Data System (ADS)

    Ryyan Khan, M.; Alam, Muhammad A.

    2015-11-01

    A traditional single-junction solar panel cannot harness ground-scattered light (albedo reflectance, RA ), and also suffers from the fundamental sub-band-gap and the thermalization losses. In this paper, we explain how a "bifacial tandem" panel would dramatically reduce these losses, with corresponding improvement in thermodynamic performance. Our study predicts (i) the optimum combination of the band-gaps, empirically given by Eg(t ) o p t≈Eg(b ) o p t(2 +RA)/3 +(1 -RA) and the (ii) corresponding optimum normalized output power given by ηT(op t ) *≈RA (2 ηSJ (o p t ) ) +(1 -RA ) ηDJ (o p t ) . Empirically, ηT(op t ) * interpolates between the thermodynamic efficiency limit of classical double-junction tandem cell ( ηDJ ) and twice that of a single-junction cell ( ηSJ ). We conclude by explaining how the fundamental loss mechanisms evolve with RA in a bifacial tandem cell.

  19. Preliminary Low Temperature Electron Irradiation of Triple Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Stella, Paul M.; Mueller, Robert L.; Scrivner, Roy L.; Helizon, Roger S.

    2007-01-01

    For many years extending solar power missions far from the sun has been a challenge not only due to the rapid falloff in solar intensity (intensity varies as inverse square of solar distance) but also because some of the solar cells in an array may exhibit a LILT (low intensity low temperature) degradation that reduces array performance. Recent LILT tests performed on commercial triple junction solar cells have shown that high performance can be obtained at solar distances as great as approx. 5 AU1. As a result, their use for missions going far from the sun has become very attractive. One additional question that remains is whether the radiation damage experienced by solar cells under low temperature conditions will be more severe than when measured during room temperature radiation tests where thermal annealing may take place. This is especially pertinent to missions such as the New Frontiers mission Juno, which will experience cell irradiation from the trapped electron environment at Jupiter. Recent testing2 has shown that low temperature proton irradiation (10 MeV) produces cell degradation results similar to room temperature irradiations and that thermal annealing does not play a factor. Although it is suggestive to propose the same would be observed for low temperature electron irradiations, this has not been verified. JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature. A fluence of 1E15 1MeV electrons was

  20. Simulation of the Mars Surface Solar Spectra for Optimized Performance of Triple-Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Edmondson, Kenneth M.; Joslin, David E.; Fetzer, Chris M.; King, RIchard R.; Karam, Nasser H.; Mardesich, Nick; Stella, Paul M.; Rapp, Donald; Mueller, Robert

    2007-01-01

    The unparalleled success of the Mars Exploration Rovers (MER) powered by GaInP/GaAs/Ge triple-junction solar cells has demonstrated a lifetime for the rovers that exceeded the baseline mission duration by more than a factor of five. This provides confidence in future longer-term solar powered missions on the surface of Mars. However, the solar cells used on the rovers are not optimized for the Mars surface solar spectrum, which is attenuated at shorter wavelengths due to scattering by the dusty atmosphere. The difference between the Mars surface spectrum and the AM0 spectrum increases with solar zenith angle and optical depth. The recent results of a program between JPL and Spectrolab to optimize GaInP/GaAs/Ge solar cells for Mars are presented. Initial characterization focuses on the solar spectrum at 60-degrees zenith angle at an optical depth of 0.5. The 60-degree spectrum is reduced to 1/6 of the AM0 intensity and is further reduced in the blue portion of the spectrum. JPL has modeled the Mars surface solar spectra, modified an X-25 solar simulator, and completed testing of Mars-optimized solar cells previously developed by Spectrolab with the modified X-25 solar simulator. Spectrolab has focused on the optimization of the higher efficiency Ultra Triple-Junction (UTJ) solar cell for Mars. The attenuated blue portion of the spectrum requires the modification of the top sub-cell in the GaInP/GaAs/Ge solar cell for improved current balancing in the triple-junction cell. Initial characterization confirms the predicted increase in power and current matched operation for the Mars surface 60-degree zenith angle solar spectrum.

  1. Mechanically Stacked Four-Junction Concentrator Solar Cells

    SciTech Connect

    Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; Garcia, Ivan; Friedman, Daniel J.; King, Richard R.; Chiu, Philip T.; France, Ryan M.; Duda, Anna; Olavarria, Waldo J.; Young, Michelle; Kurtz, Sarah R.

    2015-06-14

    Multijunction solar cells can be fabricated by bonding together component cells that are grown separately. Because the component cells are each grown lattice-matched to suitable substrates, this technique allows alloys of different lattice constants to be combined without the structural defects introduced when using metamorphic buffers. Here we present results on the fabrication and performance of four-junction mechanical stacks composed of GaInP/GaAs and GaInAsP/GaInAs tandems, grown on GaAs and InP substrates, respectively. The two tandems were bonded together with a low-index, transparent epoxy that acts as an omni-directional reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the sub-bandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and thus higher subcell voltage, compared with GaAs subcells without enhanced internal optics; all four subcells exhibit excellent material quality. The device was fabricated with four contact terminals so that each tandem can be operated at its maximum power point, which raises the cumulative efficiency and decreases spectral sensitivity. Efficiencies exceeding 38% at one-sun have been demonstrated. Eliminating the series resistance is the key challenge for the concentrator cells. We will discuss the performance of one-sun and concentrator versions of the device, and compare the results to recently fabricated monolithic four-junction cells.

  2. Application of laser annealing to solar cell junction formation

    NASA Technical Reports Server (NTRS)

    Katzeff, J. S.; Lopez, M.; Josephs, R. H.

    1981-01-01

    The possibility of using high-energy Q-switched Nd:glass lasers to form pn junctions in solar cells by annealing ion-implanted substrates is investigated. The properties of laser annealed cells are analyzed by electrical, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectrometry techniques. Tests indicate the laser annealed substrates to be damage-free and electrically active. Similar reference analysis of ion-implanted furnace-annealed substrates reveals the presence of residual defects in the form of dislocation lines and loops with substantial impurity redistribution evident for some anneal temperature/time regimes. Fabricated laser annealed cells exhibit excellent conversion efficiency. It is noted that additional improvements are anticipated once the anneal parameters for a back surface field are optimized.

  3. Studies of silicon p-n junction solar cells. [open circuit photovoltage

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1976-01-01

    Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

  4. Forming Solar-Cell Junctions By Flash Diffusion

    NASA Technical Reports Server (NTRS)

    Alexander, Paul, Jr.; Campbell, Robert B.

    1988-01-01

    Modified fabrication process simultaneously forms front and back junctions of silicon photovoltaic cells. With flash diffusion, junctions formed in 10 to 20 seconds. Cost reductions of 25 to 30 percent expected with modified process. Devices produced have performance equal to or better than cells made by conventional diffusion.

  5. Simulation of the Mars surface solar spectra for optimized performance of triple junction solar cells

    NASA Technical Reports Server (NTRS)

    Edmondson, Kenneth M.; Joslin, David E.; Fetzer, Chris M.; King, Richard R.; Karam, Nasser H.; Mardesich, Nick; Stella, Paul M.; Rapp, Donald; Mueller, Robert

    2005-01-01

    The unparalleled success of the Mars Exploration Rovers (MER) powered by GaInP/GaAs/Ge triple-junction solar cells has demonstrated a lifetime for the rovers that exceeded the baseline mission duration by more than a factor of five.

  6. Induced junction solar cell and method of fabrication

    NASA Technical Reports Server (NTRS)

    Maserjian, J.; Chern, S. S.; Li, S. P. (Inventor)

    1978-01-01

    An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

  7. Comparative performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.; Parat, K. K.

    1987-01-01

    A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.

  8. Recent Progress and Spectral Robustness Study for Mechanically Stacked Multi-junction Solar Cells

    NASA Astrophysics Data System (ADS)

    Zhao, Lu; Flamand, Giovanni; Poortmans, Jef

    2010-10-01

    Multi-terminal mechanically stacked multi-junction solar cells are an attractive candidate for terrestrial concentrator photovoltaics applications. Unlike monolithically integrated multi-junction solar cells which require current matching, all the available photon currents can be fully extracted from each junction of a mechanically stacked solar cell. Therefore, it has a high performance potential, and more importantly is less sensitive to spectrum variations. Lower losses due to current mismatch translate into a higher annual energy output for the mechanical stack. This paper presents the baseline processing developed at imec for the mechanical stacking process, and the most recent cell results by means of this technology. A GaAs-Ge dual-junction mechanically stacked multi-junction solar cell is demonstrated, with 24.7% plus 2.52% under AM1.5g, and 27.7% plus 4.42% under 30Suns concentration. In addition, spectral sensitivity is studied for both monolithically stacked and mechanically stacked solar cells, to learn the influence of spectrum variations on multi-junction solar cell performance. SMARTS model is used to predict the spectral irradiances, with solar radiation and meteorological elements from typical meteorological year 3 (TMY3) data set. The generated spectra are then fed into TCAD numerical simulation tool, to simulate the device performance. The simulation results show a reduced spectral sensitivity for mechanically stacked cell, and there is a 6% relative gain in annual energy production for the site studied (Las Vegas), compared with the monolithic stack.

  9. Analysis of a four lamp flash system for calibrating multi-junction solar cells under concentrated light

    SciTech Connect

    Schachtner, Michael Prado, Marcelo Loyo; Reichmuth, S. Kasimir; Siefer, Gerald; Bett, Andreas W.

    2015-09-28

    It has been known for a long time that the precise characterization of multi-junction solar cells demands spectrally tunable solar simulators. The calibration of innovative multi-junction solar cells for CPV applications now requires tunable solar simulators which provide high irradiation levels. This paper describes the commissioning and calibration of a flash-based four-lamp simulator to be used for the measurement of multi-junction solar cells with up to four subcells under concentrated light.

  10. High efficiency solar cells for concentrator systems: silicon or multi-junction?

    NASA Astrophysics Data System (ADS)

    Slade, Alexander; Stone, Kenneth W.; Gordon, Robert; Garboushian, Vahan

    2005-08-01

    Amonix has become the first company to begin production of high concentration silicon solar cells where volumes are over 10 MW/year. Higher volumes are available due to the method of manufacture; Amonix solely uses semiconductor foundries for solar cell production. In the previous years of system and cell field testing, this method of manufacturing enabled Amonix to maintain a very low overhead while incurring a high cost for the solar cell. However, recent simplifications to the solar cell processing sequence resulted in cost reduction and increased yield. This new process has been tested by producing small qualities in very short time periods, enabling a simulation of high volume production. Results have included over 90% wafer yield, up to 100% die yield and world record performance (η =27.3%). This reduction in silicon solar cell cost has increased the required efficiency for multi-junction concentrator solar cells to be competitive / advantageous. Concentrator systems are emerging as a low-cost, high volume option for solar-generated electricity due to the very high utilization of the solar cell, leading to a much lower $/Watt cost of a photovoltaic system. Parallel to this is the onset of alternative solar cell technologies, such as the very high efficiency multi-junction solar cells developed at NREL over the last two decades. The relatively high cost of these type of solar cells has relegated their use to non-terrestrial applications. However, recent advancements in both multi-junction concentrator cell efficiency and their stability under high flux densities has made their large-scale terrestrial deployment significantly more viable. This paper presents Amonix's experience and testing results of both high-efficiency silicon rear-junction solar cells and multi-junction solar cells made for concentrated light operation.

  11. Experimental determination of series resistance of p-n junction diodes and solar cells

    NASA Technical Reports Server (NTRS)

    Chen, P. J.; Pao, S. C.; Neugroschel, A.; Lindholm, F. A.

    1978-01-01

    Various methods for determining the series resistance of p-n junction diodes and solar cells are described and compared. New methods involving the measurement of the ac admittance are shown to have certain advantages over methods proposed earlier.

  12. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

    DOEpatents

    Wanlass, Mark W.

    1994-01-01

    A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

  13. Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements.

    PubMed

    Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

    2015-01-01

    World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I-V relations of individual subcells without the need for referencing measured I-V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the "balance sheets" of tandem solar cells. PMID:25592484

  14. III-V Multi-junction solar cells and concentrating photovoltaic (CPV) systems

    NASA Astrophysics Data System (ADS)

    Philipps, Simon P.; Bett, Andreas W.

    2014-12-01

    It has been proven that the only realistic path to practical ultra-high efficiency solar cells is the monolithic multi-junction approach, i.e., to stack pn-junctions made of different semiconductor materials on top of each other. Each sub pn-junction, i.e., sub solar cell, converts a specific part of the sun's spectrum. In this way, the energy of the sunlight photons is converted with low thermalization losses. However, large-area multi-junction solar cells are still far too expensive if applied in standard PV modules. A viable solution to solve the cost issue is to use tiny solar cells in combination with optical concentrating technology, in particular, high concentrating photovoltaics (HCPV), in which the light is concentrated over the solar cells more than 500 times. The combination of ultra-high efficient solar cells and optical concentration lead to low cost on system level and eventually to low levelized cost of electricity, today, well below 8 €cent/kWh and, in the near future, below 5 €cent/kWh. A wide variety of approaches exists for III-V multi-junction solar cells and HCPV systems. This article is intended to provide an overview about the different routes being followed.

  15. Design considerations for the Tandem Junction Solar Cell

    NASA Technical Reports Server (NTRS)

    Matzen, W. T.; Carbajal, B. G.; Hardy, R. W.

    1979-01-01

    Structure and operation of the tandem junction cell (TJC) are described. The impact of using only back contacts is discussed. A model is presented which explains operation of the TJC in terms of transistor action. The model is applied to predict TJC performance as a function of physical parameters.

  16. NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell

    SciTech Connect

    2016-01-01

    Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. National Renewable Energy Laboratory (NREL) and Swiss Center for Electronics and Microtechnology (CSEM) scientists have collaborated to create a novel tandem solar cell that operates at 29.8% conversion efficiency under non-concentrator (1-sun) conditions. In comparison, the 1-sun efficiency of a silicon (Si) single-junction solar cell is probably still a few years away from converging on its practical limit of about 26%.

  17. Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

    SciTech Connect

    Geisz, John F.; France, Ryan M.; Steiner, Myles A.; Friedman, Daniel J.; García, Iván

    2014-09-26

    Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be applied to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.

  18. GaAs nanowire array solar cells with axial p-i-n junctions.

    PubMed

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics. PMID:24849203

  19. Detailed Analysis of Temperature Characteristics of an InGaP/InGaAs/Ge Triple-Junction Solar Cell

    NASA Astrophysics Data System (ADS)

    Nishioka, Kensuke; Sueto, Tsuyoshi; Uchida, Masaki; Ota, Yasuyuki

    2010-06-01

    Temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell were analyzed in detail using an equivalent circuit calculation. The current-voltage ( I- V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. Fitting of I- V curves between measured and calculated data was carried out, and the diode parameters and temperature exponents of the single-junction solar cells were extracted. The parameters for each single-junction solar cell were used in the equivalent circuit model for the triple-junction solar cell, and calculations of solar cell performance were carried out. Measured and calculated results of the I- V characteristics at various temperatures agreed well.

  20. Present Status in the Development of III-V Multi-Junction Solar Cells

    NASA Astrophysics Data System (ADS)

    Philipps, Simon P.; Guter, Wolfgang; Welser, Elke; Schöne, Jan; Steiner, Marc; Dimroth, Frank; Bett, Andreas W.

    During the last yearshigh-concentration photovoltaics (HCPV) technology has gained growing attention. Excellent operatingAC-system efficiencies of up to 25% have been reported. One of the driving forces for this high system efficiency has been the continuous improvement of III-V multi-junction solar cell efficiencies. In consequence, the demand for these solar cells has risen, and strong efforts are undertaken to further increase the solar cell efficiency as well as the volume of cell output. The production capacity for multi-junction solar cells does not constitute a limitation. Already now several tens of MWp per year can be produced and the capacities can easily be increased. The state-of-the art approach for highly efficient photovoltaic energy conversion is marked by the Ga0.50In0.50P/Ga0.99In0.01As/Ge structure. This photovoltaic device is today well established in space applications and recently has entered the terrestrial market. The following chapter presents an overview about the present research status in III-V multi-junction solar cells at Fraunhofer ISE regarding cell design, expected performance, numerical simulation tools, adaptation of devices to different incident spectra and the fabrication of these devices. Finally, an outlook on future developments of III-V multi-junction solar cells is given.

  1. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    NASA Astrophysics Data System (ADS)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  2. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

    PubMed

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  3. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    PubMed Central

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  4. High performance radial p-n junction solar cell based on silicon nanopillar array with enhanced decoupling mechanism

    NASA Astrophysics Data System (ADS)

    Dou, Bingfei; Jia, Rui; Li, Haofeng; Chen, Chen; Ding, Wuchang; Meng, Yanlong; Xing, Zhao; Liu, Xinyu; Ye, Tianchun

    2012-10-01

    High performance radial p-n junction solar cells based on silicon nanopillar array were synthesized from p-type silicon substrates and compared with planar cell. These radial p-n junction cells exhibited considerable higher short-circuit current, due to their unique carriers' decoupling mechanism. After the electrode enhancement via light induced plating, a best efficiency of near 12% was achieved for radial p-n junction solar cell, which is better than the planar control cell.

  5. Novel InGaAsN pn Junction for High-Efficiency Multiple-Junction Solar Cells

    SciTech Connect

    Allerman, A.A.; Chang, P.C.; Gee, J.M.; Hammons, B.E.; Hou, H.Q.; Jones, E.D.; Kurtz, S.R.; Reinhardt, K.C.

    1999-03-26

    We report the application of a novel material, InGaAsN, with bandgap energy of 1.05 eV as a junction in an InGaP/GaAs/InGaAsN/Ge 4-junction design. Results of the growth and structural, optical, and electrical properties were demonstrated, showing the promising perspective of this material for ultra high efficiency solar cells. Photovoltaic properties of an as-grown pn diode structure and improvement through post growth annealing were also discussed.

  6. Light-splitting photovoltaic system utilizing two dual-junction solar cells

    SciTech Connect

    Xiong, Kanglin; Yang, Hui; Lu, Shulong; Dong, Jianrong; Zhou, Taofei; Wang, Rongxin; Jiang, Desheng

    2010-12-15

    There are many difficulties limiting the further development of monolithic multi-junction solar cells, such as the growth of lattice-mismatched material and the current matching constraint. As an alternative approach, the light-splitting photovoltaic system is investigated intensively in different aspects, including the energy loss mechanism and the choice of energy bandgaps of solar cells. Based on the investigation, a two-dual junction system has been implemented employing lattice-matched GaInP/GaAs and InGaAsP/InGaAs cells grown epitaxially on GaAs and InP substrates, respectively. (author)

  7. AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

    1990-01-01

    Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

  8. Investigation of the Carbon Arc Source as an AM0 Solar Simulator for Use in Characterizing Multi-Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Xu, Jianzeng; Woodyward, James R.

    2005-01-01

    The operation of multi-junction solar cells used for production of space power is critically dependent on the spectral irradiance of the illuminating light source. Unlike single-junction cells where the spectral irradiance of the simulator and computational techniques may be used to optimized cell designs, optimization of multi-junction solar cell designs requires a solar simulator with a spectral irradiance that closely matches AM0.

  9. Local detection of deep carrier traps in the pn-junction of silicon solar cells

    NASA Astrophysics Data System (ADS)

    Mchedlidze, T.; Scheffler, L.; Weber, J.; Herms, M.; Neusel, J.; Osinniy, V.; Möller, C.; Lauer, K.

    2013-07-01

    Mesa-diodes, with fully preserved solar cell structure, were fabricated at various locations of silicon solar cell. Deep level transient spectroscopy was applied for detection of carrier traps in the mesa-diodes. The parameters of the traps suggest their relation to interstitial iron and/or iron-related complexes. The density of the traps sharply falls with the distance from the pn-junction. Measurements using Schottky-diodes fabricated on top of the bulk substrate material of the cell, after etching off of the solar-cell structure, did not show the presence of the traps. The results suggest that defects, influencing the performance of solar cells, were formed in/near to the pn-junctions during their fabrication. The possible origin of the defects will be discussed.

  10. The Environmental Performance at Low Intensity, Low Temperature (LILT) of High Efficiency Triple Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Stella, Paul M.; Mueller, Robert; Davis, Gregory; Distefano, Salvador

    2004-01-01

    A number of JPL missions, either active or in the p l d g stages, require the accurate LILT flew intensity - low temperate) climate of triple-junction solar. Although triple ignition LILT performance was reported as recently as 2002, there has been an evolutionary advance in cell technology by both U.S. space cell manufacturers that, for mission design purposes, effectively obsoletes the earlier data. As a result, JPL initiated a program to develop a database for the LILT performance of the new high performance triple junction solar cells. JPL obtained Emcore Advanced triple Juntion CIC assemblies and Spectrolab Ultra Triple Junction CIC assemblies. These cells were tested at temperature-intensity ranges designed to cover applications between 1 and 5.18 AU solar distances. 1 MeV electron irradiation from 25 E14 to 1 El5 w were performed on the cells to evaluate the combined effect of particulate radiation and LILT conditions. The effect of LILT conditions was observed to incur an increase in the variation of cell performances such that at simulted 5.18 AU conditions the average performance was approximately 30% with the best cells measuring between 32 and 34% efficiency. The 30% average efficiency compares with approximately 25% average efficiency measured on earlier technology triple junction solar cells.

  11. Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Xu, Ying; Diao, Hong-Wei; Hao, Hui-Ying; Zeng, Xiang-Bo; Liao, Xian-Bo

    2006-10-01

    In this paper, we use a pulsed rapid thermal processing (RTP) approach to create an emitter layer of hetero-junction solar cell. The process parameters and crystallization behaviour are studied. The structural, optical and electric properties of the crystallized films are also investigated. Both the depth of PN junction and the conductivity of the emitter layer increase with the number of RTP pulses increasing. Simulation results show that efficiencies of such solar cells can exceed 15% with a lower interface recombination rate, but the highest efficiency is 11.65% in our experiments.

  12. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

    DOEpatents

    Wanlass, M.W.

    1994-12-27

    A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

  13. Preliminary low temperature electron irradiation of triple junction solar cells

    NASA Technical Reports Server (NTRS)

    Stella, Paul M.; Mueller, Robert L.; Scrivner, Roy L.; Helizon, Roger S.

    2005-01-01

    JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature.

  14. Highly efficient organic multi-junction solar cells with a thiophene based donor material

    SciTech Connect

    Meerheim, Rico Körner, Christian; Leo, Karl

    2014-08-11

    The efficiency of organic solar cells can be increased by serial stacked subcells even upon using the same absorber material. For the multi-junction devices presented here, we use the small molecule donor material DCV5T-Me. The subcell currents were matched by optical transfer matrix simulation, allowing an efficiency increase from 8.3% for a single junction up to 9.7% for a triple junction cell. The external quantum efficiency of the subcells, measured under appropriate light bias illumination, is spectrally shifted due to the microcavity of the complete stack, resulting in a broadband response and an increased cell current. The increase of the power conversion efficiency upon device stacking is even stronger for large area cells due to higher influence of the resistance of the indium tin oxide anode, emphasizing the advantage of multi-junction devices for large-area applications.

  15. Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1995-01-01

    Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell

  16. Solar energy conversion through the interaction of plasmons with tunnel junctions. Part A: Solar cell analysis. Part B: Photoconductor analysis

    NASA Technical Reports Server (NTRS)

    Welsh, P. E.; Schwartz, R. J.

    1988-01-01

    A solar cell utilizing guided optical waves and tunnel junctions was analyzed to determine its feasibility. From this analysis, it appears that the limits imposed upon conventional multiple cell systems also limit this solar cell. Due to this limitation, it appears that the relative simplicity of the conventional multiple cell systems over the solar cell make the conventional multiple cell systems the more promising candidate for improvement. It was discovered that some superlattice structures studied could be incorporated into an infrared photodetector. This photoconductor appears to be promising as a high speed, sensitive (high D sup star sub BLIP) detector in the wavelength range from 15 to over 100 micrometers.

  17. Comparison of Ge, InGaAs p-n junction solar cell

    NASA Astrophysics Data System (ADS)

    Korun, M.; Navruz, T. S.

    2016-04-01

    In this paper, the effect of material parameters on the efficiency of Ge and InGaAs p-n junction solar cells which are most commonly used as the sub-cell of multi-junction solar cells are investigated and the results due to these two cells are compared. The efficiency of Ge (EG =0.67 eV) solar cell which is easy to manufacture and inexpensive in cost, is compared with the efficiency of InGaAs (EG =0.74 eV) solar cell which is coming with drawback of high production difficulties and cost. The theoretical efficiency limit of Ge and InGaAs solar cells with optimum thickness were determined by using detailed balance model under one sun AM1.5 illumination. Since the band gap values of two cells are close to each other, approximate detailed balance efficiency limits of 16% for InGaAs and 14% for Ge are obtained. When drift-diffusion model is used and the thicknesses and doping concentrations are optimized, the maximum efficiency values are calculated as 13% for InGaAs and 9% for Ge solar cell. For each solar cell external quantum efficiency curves due to wavelength are also sketched and compared.

  18. A high intensity solar cell invention: The edge-illuminated vertical multi-junction (VNJ) solar cell

    SciTech Connect

    Sater, B.L.

    1992-08-07

    This report contains a summary of a High Intensity Solar Cell (HI Cell) development carried out under the NIST/DOE Energy-Related Invention Program. The HI Cell, or Edge-Illuminated vertical Multi-junction Solar Cell, eliminates most major problems encountered with other concentrator solar cell designs. Its high voltage and low series resistance features make it ideally suited for efficient operation at high intensities. Computer modeling shows efficiencies near 30% at 500 suns intensity are possible with state-of-art processing. Development of a working model was largely successful before encountering an unexpected problem during the last fabrication step with the anti-reflection coating. Unfortunately, funding was exhausted before its resolution. Recommendations are made to resolve the AR coating problem and to integrate all the knowledge gained during this development into a viable prototype model. The invention will provide the technical and economic performance needed to make photovoltaic systems cost-effective for wide use.

  19. A high intensity solar cell invention: The edge-illuminated vertical multi-junction (VNJ) solar cell. Final report

    SciTech Connect

    Sater, B.L.

    1992-08-07

    This report contains a summary of a High Intensity Solar Cell (HI Cell) development carried out under the NIST/DOE Energy-Related Invention Program. The HI Cell, or Edge-Illuminated vertical Multi-junction Solar Cell, eliminates most major problems encountered with other concentrator solar cell designs. Its high voltage and low series resistance features make it ideally suited for efficient operation at high intensities. Computer modeling shows efficiencies near 30% at 500 suns intensity are possible with state-of-art processing. Development of a working model was largely successful before encountering an unexpected problem during the last fabrication step with the anti-reflection coating. Unfortunately, funding was exhausted before its resolution. Recommendations are made to resolve the AR coating problem and to integrate all the knowledge gained during this development into a viable prototype model. The invention will provide the technical and economic performance needed to make photovoltaic systems cost-effective for wide use.

  20. A high intensity solar cell invention: The edge-illuminated Vertical Multi-Junction (VMJ) solar cell

    NASA Astrophysics Data System (ADS)

    Sater, Bernard L.

    1992-08-01

    A summary is presented of a High Intensity Solar Cell (HI Cell) development carried out under the NIST/DOE Energy-Related Invention Program. The HI Cell, or Edge-Illuminated Vertical Multi-junction Solar Cell, eliminates most major problems encountered with other concentrator solar cell designs. Its high voltage and low series resistance features make it ideally suited for efficient operation at high intensities. Computer modeling shows efficiencies near 30 pct. at 500 suns intensity are possible with state-of-the-art processing. Development of a working model was largely successful before encountering an unexpected problem during the last fabrication step with the anti-reflection coating. Unfortunately, funding was exhausted before its resolution. Recommendations are made to resolve the AR coating problem and to integrate all the knowledge gained during this development into a viable prototype model. The invention will provide the technical and economic performance needed to make photovoltaic systems cost-effective for wide use.

  1. The p recombination layer in tunnel junctions for micromorph tandem solar cells

    NASA Astrophysics Data System (ADS)

    Yao, Wen-Jie; Zeng, Xiang-Bo; Peng, Wen-Bo; Liu, Shi-Yong; Xie, Xiao-Bing; Wang, Chao; Liao, Xian-Bo

    2011-07-01

    A new tunnel recombination junction is fabricated for n—i—p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p+ recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n—i—p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω·cm2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage Voc = 1.4 V, which is nearly the sum of the Vocs of the two corresponding single cells, indicating no Voc losses at the tunnel recombination junction.

  2. The photoelectric characteristics of a few-layer graphene/Si Schottky junction solar cell

    NASA Astrophysics Data System (ADS)

    Ma, Xiying; Gu, Weixia

    2015-10-01

    We present a study of the photovoltaic effects of a graphene/n- Si Schottky junction solar cell. The graphene/Si solar cell was prepared by means of rapid chemical vapor deposition, while the graphene films were grown with a CH4/Ar mixed gas under a constant flow at 950°C and then annealed at 1000°C. It was found that the junction between the graphene film and the n-Si structure played an important role in determining the device performance. An energy conversion efficiency of 2.1% was achieved under an optical illumination of 100 mW. The strong photovoltaic effects of the cell were due to device junction's ability to efficiently generate and separate electron-hole pairs.

  3. Cost Trade Between Multi-Junction, Gallium Arsenide, and Silicon Solar Cells

    NASA Technical Reports Server (NTRS)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar 2 cells and cost approximately five times as much per unit power at the cell level. A trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552,000 dollars per kilogram to launch and suppon3science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. ff the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and supported at a price of approximately $58,000 per kilogram. The trade shows that even if the multi-junction cells are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $180,000 per kilogram. This is still much less than the original $552,000 per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater

  4. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    SciTech Connect

    Liu, X.; Zhang, X. W. Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

    2014-11-03

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  5. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    NASA Technical Reports Server (NTRS)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  6. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    NASA Astrophysics Data System (ADS)

    Gaddy, Edward M.

    1995-10-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  7. Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint

    SciTech Connect

    Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.

    2008-05-01

    We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

  8. Qualification of European Triple-Junction Solar Cells with Astrium PVA Technology

    NASA Astrophysics Data System (ADS)

    Dettlaff, K.; Gerhard, A.; Paaramann, C.; Bals, A.; Zimmermann, W.; Fernandez, E.; Caon, A.

    2008-09-01

    During the last couple of years the application of triple junction GaInP/GaInAs/Ge solar cells for all kind of missions - LEO, GEO, MEO and inter-planetary missions - came to pass, replacing the Si solar cells and related processing parameters.Comprehensive qualification programs have been performed at Astrium in order to qualify the new generations of solar cell types with Astrium's PVA technology. The actual generation of European triple junction GaInP/GaInAs/Ge solar cells manufactured by AZUR SPACE has been successfully qualified in the frame of the ESA ARTES3 programe for GEO-applications like Eurostar 3000 and Alpha-Bus and in the frame of GalileoSat for a MEO orbit. The delta qualification of the 3G28-ID2* solar cell and the associated PVA technology for LEO is currently running for the ESA SWARM project which will have operational temperatures up to 140°C in combination with an ATOX environment. The high operational temperature in combination with the high number of thermal cycles is a challenge for the solar cell interconnection technology and for the integral diode (ID2*). Different solar cell interconnector technologies have to be used and a protection against the ATOX environment has to be implemented. A further challenge of the SWARM project is the requirement for extremely high magnetic cleanliness.This paper will present qualification test results and the technical solutions to overcome the outlined challenges on PVA level.

  9. Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements

    PubMed Central

    Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

    2015-01-01

    World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I–V relations of individual subcells without the need for referencing measured I–V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the “balance sheets” of tandem solar cells. PMID:25592484

  10. Enhancing light absorption within the carrier transport length in quantum junction solar cells.

    PubMed

    Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

    2015-09-10

    Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm2, a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells. PMID:26368966

  11. Investigations To Characterize Multi-Junction Solar Cells In The Stratosphere Using Low-Cost Balloon And Communication Technologies

    NASA Technical Reports Server (NTRS)

    Bowe, Glenroy A.; Wang, Qianghua; Woodyard, James R.; Johnston, Richard R.; Brown, William J.

    2005-01-01

    The use of current balloon, control and communication technologies to test multi-junction solar sell in the stratosphere to achieve near AMO conditions have been investigated. The design criteria for the technologies are that they be reliable, low cost and readily available. Progress is reported on a program to design, launch, fly and retrieve payloads dedicated to testing multi-junction solar cells.

  12. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    SciTech Connect

    Gaddy, E.M.

    1995-10-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty.

  13. Simulation and optimization of current matching double-junction InGaN/Si solar cells

    NASA Astrophysics Data System (ADS)

    Nacer, S.; Aissat, A.

    2016-02-01

    This paper deals with theoretical investigation of the performance of current-matched In x GaN/Si double-junction solar cells. Calculations were performed under 1-sun AM1.5 using the one diode ideal model. Impact of minor carrier lifetime and surface recombination velocity in the top sub-cell on the cell performances is analyzed. Optimum composition of the top sub-cell has been identified ( x = 51.8 % and E g = 1.68 eV). The simulation results predict, for the optimized InGaN/Si double-junction solar cell, a short-circuit current J sc = 20 mA/cm2, an open-circuit voltage V oc = 1.97 V, and a conversion efficiency η = 38.3%.

  14. Triple-Junction Solar Cell Design For Low Intensity Low Temperature Space Applications

    NASA Astrophysics Data System (ADS)

    Khorenko, V.; Strobl, G. F. X.; Hoheisel, R.; Dimroth, F.; Campesato, R.; Casale, M.; Baur, C.

    2011-10-01

    In this paper, we present the results of the electrical characterisation of triple-junction solar cells especially designed for low intensity low temperature (LILT) operation conditions. We show that by applying an appropriate choice of the front contact metallisation, by an additional passivation of the cell mesa edges and without modifying the 3G28 InGaP/InGaAs/Ge epitaxial cell structure, the appearance of the flat spot effect at LILT conditions can be practically eliminated. Analysis of the temperature behaviour of the fill factor of solar cells with optimized design show that in absence of the flat spot effect, the electrical performance of solar cells at LILT conditions is nevertheless mostly limited by tunnelling assisted current flow. For these solar cells, an average fill factor above 0.9 and an average efficiency higher than 33.5 % (at 0.037xAM0 and -120°C) are demonstrated.

  15. An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction

    NASA Astrophysics Data System (ADS)

    Sahoo, G. S.; Nayak, P. P.; Mishra, G. P.

    2016-07-01

    Multi junction solar cell has not achieved an optimum performance yet. To acquire more conversion efficiency research on multi junction solar cell are in progress. In this work we have proposed a dual junction solar cell with conversion efficiency of 43.603%. Mainly the focus is given on the tunnel diode, window layer and back surface field (BSF) layer of the cell, as all of them plays important role on the cell performance. Here we have designed a hetero InGaP/GaAs tunnel diode which makes tunnel diode more transparent to the bottom cell as well as reduces the recombination at the interfaces. The thickness of the window and BSF layer are optimized to achieve higher conversion efficiency. The simulation is carried out using Silvaco ATLAS TCAD under 1000 sun of AM1.5G spectrum. Different performance parameters of the cell like short circuit current density (Jsc), open circuit voltage (Voc), external quantum efficiency (EQE), fill factor (FF), conversion efficiency (η), spectral response and photogeneration rate of the cell are examined and compared with previously reported literatures. For the proposed model a Voc of 2.7043 V, Jsc of 1898.52 mA/cm2, FF of 88.88% and η of 43.6% are obtained.

  16. Silicon-core glass fibres as microwire radial-junction solar cells

    NASA Astrophysics Data System (ADS)

    Martinsen, F. A.; Smeltzer, B. K.; Nord, M.; Hawkins, T.; Ballato, J.; Gibson, U. J.

    2014-09-01

    Vertically aligned radial-junction solar cell designs offer potential improvements over planar geometries, as carrier generation occurs close to the junction for all absorption depths, but most production methods still require a single crystal substrate. Here, we report on the fabrication of such solar cells from polycrystalline, low purity (99.98%) p-type silicon starting material, formed into silicon core, silica sheath fibres using bulk glass draw techniques. Short segments were cut from the fibres, and the silica was etched from one side, which exposed the core and formed a conical cavity around it. We then used vapour deposition techniques to create p-i-n junction solar cells. Prototype cells formed from single fibres have shown conversion efficiencies up to 3.6%, despite the low purity of the starting material. This fabrication method has the potential to reduce the energy cost and the silicon volume required for solar cell production. Simulations were performed to investigate the potential of the conical cavity around the silicon core for light collection. Absorption of over 90% of the incident light was predicted, over a wide range of wavelengths, using these structures in combination with a 10% volume fraction of silicon.

  17. MIS and PN junction solar cells on thin-film polycrystalline silicon

    SciTech Connect

    Ariotedjo, A.; Emery, K.; Cheek, G.; Pierce, P.; Surek, T.

    1981-05-01

    The Photovoltaic Advanced Silicon (PVAS) Branch at the Solar Energy Research Institute (SERI) has initiated a comparative study to assess the potential of MIS-type solar cells for low-cost terrestrial photovoltaic systems in terms of performance, stability, and cost-effectiveness. Several types of MIS and SIS solar cells are included in the matrix study currently underway. This approach compares the results of MIS and p/n junction solar cells on essentially identical thin-film polycrystalline silicon materials. All cell measurements and characterizations are performed using uniform testing procedures developed in the Photovoltaic Measurements and Evaluation (PV M and E) Laboratory at SERI. Some preliminary data on the different cell structures on thin-film epitaxial silicon on metallurgical-grade substrates are presented here.

  18. Influence of grain boundaries on recombination in polysilicon pn-junction solar cells

    SciTech Connect

    Fossum, J.G.; Neugroschel, A.; Lindholm, F.A.; Mazer, J.A.

    1980-01-01

    The physics controlling recombination in polysilicon pn-junction cells is described. Analytic models characterizing this recombination, whose parameters can be related directly to experiment, are developed. The analysis reveals that, in general, the description of intra-grain and grain-boundary recombination in a polysilicon solar cell requires the solution of a nonlinear, three-dimensional boundary-value problem. Cases of practical interest for which this problem is tractable are discussed. The analysis predicts an exp(qV/2kT) dependence (the reciprocal slope factor is exactly two) for carrier recombination at a grain boundary within the junction space-charge region of a non-illuminated, forward-biased cell. This result, and others of the analysis, are shown to be consistent with measured current-voltage characteristics of pn junctions fabricated on polycrystalline silicon.

  19. Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells.

    PubMed

    Dai, Pengcheng; Zhang, Guan; Chen, Yuncheng; Jiang, Hechun; Feng, Zhenyu; Lin, Zhaojun; Zhan, Jinhua

    2012-03-21

    Porous copper zinc tin sulfide (CZTS) thin film was prepared via a solvothermal approach. Compared with conventional dye-sensitized solar cells (DSSCs), double junction photoelectrochemical cells using dye-sensitized n-type TiO(2) (DS-TiO(2)) as the photoanode and porous p-type CZTS film as the photocathode shows an increased short circuit current, external quantum efficiency and power conversion efficiency. PMID:22322239

  20. 1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

    NASA Technical Reports Server (NTRS)

    Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

    1990-01-01

    A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

  1. Development and fabrication of a solar cell junction processing system

    NASA Technical Reports Server (NTRS)

    Giesling, R.

    1981-01-01

    Modifications to the ground plane, to insure a good electrical return path during the pulse discharge, were made using a ring of beryllium copper finger stock attached to the underside of the aluminum ground plate. Experiments on annealing of wafers with ion implantation damage continued. The entire surface of 100 mm diameter wafers were annealed by one pulse for the standard implant (10 keV, phosphorus, 2x10 to the 15th power ions/sq cm). While samples are being fabricated into solar cells for electrical characterization, work is continuing on improvement of the electron beam uniformity and the optimization of the diode parameters. The engineering design was completed and the manufacturing detail drawings were released for fabrication. Assembly of the subcomponents for the exit and entrance locks is almost complete. These components include the cassettes, the indexing mechanisms, main doors, and wafer carrier transfer modules. The 'Y' track and three phase transition track sections are under final assembly and test.

  2. Development and fabrication of a solar cell junction processing system

    NASA Technical Reports Server (NTRS)

    Halvason, W.

    1980-01-01

    Experiments were completed which indicate that single-pulse, liquid-phase epitaxial regrowth is the optimum technique for pulsed electron beam annealing of ion implantation damage in silicon wafers. An electron beam which covers the entire area of the wafer was chosen for the solar cell processor. Beam control experiments to improve beam propagation and to test the concept of partial space charge and current neutralization were initiated. The electrical parameters of the pulsed electron beam subsystem were chosen on the basis of computer calculations and past experience in pulsed electron accelerator design and operation. The pulser, designated SPI-PULSE 7000, is designed to anneal 10 cm diameter silicon wafers at a rate of 30 per minute. The preliminary design of the major elements of the SPI-PULSE 7000 was completed, and the detailed design of many of the components begun. These elements include a capacitive energy store and charging system, an electron accelerator, a beam control system, a wafer handling system and pressure and vacuum assemblies.

  3. Fabrication of p(+)-n junction GaAs solar cells by a novel method

    NASA Technical Reports Server (NTRS)

    Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

    1984-01-01

    A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

  4. Very High Efficiency Triple Junction Solar Cells Based On (AL)InGaP Compounds

    NASA Astrophysics Data System (ADS)

    Gori, Gabriele; Campesato, Roberta; Casale, Maria Cristina; Gabetta, Giuseppe

    2011-10-01

    In this paper we report the theoretical and experimental results related to the use of Aluminium Gallium Indium Phosphide (AlInGaP) as substitute of Gallium Indium Phosphide (InGaP) semiconductor, in the realization of high efficiency triple junction solar cells for space applications. The (Al)InGaP/GaAs/Ge solar cells have been modelled and manufactured on standard and thin Germanium wafers; the measurements under AM0 spectrum 25 °C, showed efficiencies above 30% both on standard and thin Ge wafers.

  5. Morphology, properties, and performance of electrodeposited n-CdSe in liquid junction solar cells

    SciTech Connect

    Tomkiewicz, M.; Ling, I.; Parsons, W.S.

    1982-09-01

    The authors describe the mechanisms for galvanostatic electrodeposition of CdSe in terms of competition between chemical reactions that lead to Se formation and electrochemical reduction of Se as polyselenide, at the interfaces between selenium and selenide. This mechanism leads to a cauliflower morphology for the resulting film. This morphology is ideal for a photoanode in the liquid junction solar cell configuration, and the authors describe the performance of such an electrode. In spite of the unique morphology, solid-state properties of the film can be evaluated and the methodology for these evaluations is presented. The performance of the liquid junction solar cells is limited by the dark current and the dielectric properties of the material. The authors also describe the effects of metal ions such as Zn/sup +2/, Ru/sup +3/, and Ga/sup +3/ on the various electrode properties.

  6. Triple-Junction Hybrid Tandem Solar Cells with Amorphous Silicon and Polymer-Fullerene Blends

    PubMed Central

    Kim, Taehee; Kim, Hyeok; Park, Jinjoo; Kim, Hyungchae; Yoon, Youngwoon; Kim, Sung-Min; Shin, Chonghoon; Jung, Heesuk; Kim, Inho; Jeong, Doo Seok; Kim, Honggon; Kim, Jin Young; Kim, BongSoo; Ko, Min Jae; Son, Hae Jung; Kim, Changsoon; Yi, Junsin; Han, Seunghee; Lee, Doh-Kwon

    2014-01-01

    Organic-inorganic hybrid tandem solar cells attract a considerable amount of attention due to their potential for realizing high efficiency photovoltaic devices at a low cost. Here, highly efficient triple-junction (TJ) hybrid tandem solar cells consisting of a double-junction (DJ) amorphous silicon (a-Si) cell and an organic photovoltaic (OPV) rear cell were developed. In order to design the TJ device in a logical manner, a simulation was carried out based on optical absorption and internal quantum efficiency. In the TJ architecture, the high-energy photons were utilized in a more efficient way than in the previously reported a-Si/OPV DJ devices, leading to a significant improvement in the overall efficiency by means of a voltage gain. The interface engineering such as tin-doped In2O3 deposition as an interlayer and its UV-ozone treatment resulted in the further improvement in the performance of the TJ solar cells. As a result, a power conversion efficiency of 7.81% was achieved with an open-circuit voltage of 2.35 V. The wavelength-resolved absorption profile provides deeper insight into the detailed optical response of the TJ hybrid solar cells. PMID:25412648

  7. An optimized efficient dual junction InGaN/CIGS solar cell: A numerical simulation

    NASA Astrophysics Data System (ADS)

    Farhadi, Bita; Naseri, Mosayeb

    2016-08-01

    The photovoltaic performance of an efficient double junction InGaN/CIGS solar cell including a CdS antireflector top cover layer is studied using Silvaco ATLAS software. In this study, to gain a desired structure, the different design parameters, including the CIGS various band gaps, the doping concentration and the thickness of CdS layer are optimized. The simulation indicates that under current matching condition, an optimum efficiency of 40.42% is achieved.

  8. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction

    SciTech Connect

    Zide, J.M.O.; Kleiman-Shwarsctein, A.; Strandwitz, N.C.; Zimmerman, J.D.; Steenblock-Smith, T.; Gossard, A.C.; Forman, A.; Ivanovskaya, A.; Stucky, G.D.

    2006-04-17

    We report the molecular beam epitaxy growth of Al{sub 0.3}Ga{sub 0.7}As/GaAs multijunction solar cells with epitaxial, semimetallic ErAs nanoparticles at the interface of the tunnel junction. The states provided by these nanoparticles reduce the bias required to pass current through the tunnel junction by three orders of magnitude, and therefore drastically reduce the voltage losses in the tunnel junction. We have measured open-circuit voltages which are 97% of the sum of the constituent cells, which result in nearly double the efficiency of our multijunction cell with a conventional tunnel junction.

  9. Optics and calculated efficiencies of mechanically stacked two-junction solar cells

    SciTech Connect

    Partain, L.D.; Fraas, L.M.; McLeod, P.S.; Cape, J.A.; Kuryla, M.S.

    1987-07-15

    Mechanically stacked two-junction solar cells avoid the multijunction problems of interfering growth conditions, shorting layers, and current matching. They also allow the use of well-developed Si and GaAs junctions. Doping the top junction substrates at 2(10/sup 17/) cm/sup -3/ reduces measured free-carrier absorption by up to a factor of 5 compared to doping at 8(10/sup 17/) cm/sup -3/. Separately measured quantum-yield spectra, open-circuit voltages, and fill factors provide the basis to calculate stack efficiencies of 24%--28% for Si stacked under GaAsP and GaAs top junctions for a direct air mass 1.5 (AM1.5D)= terrestrial sunlight spectra and a 400 x light concentration. The GaAs is a preferred top junction because it has a direct gap, operates at near its theoretical limits, and minimizes transmission loss effects by contributing over 70% of the total stack output without compromising potential stack performance. The open-circuit voltages of GaAs and Si cells are measured to vary with light intensity as predicted by the standard model with a junction ideality factor equal to 1.0. This and other experimental junction data provide the basis to calculate 400 x , AM1.5D stack efficiencies of 29% for GaAs stacked on Ge and 30% for GaAs stacked on GaSb. Device improvements are suggested to project GaAs/Ge stack efficiencies of 30% and GaAs/GaSb stack efficiencies of 34% for 400 x , AM1.5D. The 400 x , AM0 efficiencies for space are 0.88 to 0.91 times the corresponding, terrestrial AM1.5D values.

  10. 17.6%-Efficient radial junction solar cells using silicon nano/micro hybrid structures

    NASA Astrophysics Data System (ADS)

    Lee, Kangmin; Hwang, Inchan; Kim, Namwoo; Choi, Deokjae; Um, Han-Don; Kim, Seungchul; Seo, Kwanyong

    2016-07-01

    We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells.We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the

  11. Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

    1987-01-01

    Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

  12. Development and fabrication of a solar cell junction processing system. Quarterly report No. 2, July 1980

    SciTech Connect

    Siesling, R.

    1980-07-01

    The basic objectives of the program are the following: (1) to design, develop, construct and deliver a junction processing system which will be capable of producing solar cell junctions by means of ion implantation followed by pulsed electron beam annealing; (2) to include in the system a wafer transport mechanism capable of transferring 4-inch-diameter wafers into and out of the vacuum chamber where the ion implantation and pulsed electron beam annealing processes take place; (3) to integrate, test and demonstrate the system prior to its delivery to JPL along with detailed operating and maintenance manuals; and (4) to estimate component lifetimes and costs, as necessary for the contract, for the performance of comprehensive analyses in accordance with the Solar Array Manufacturing Industry Costing Standards (SAMICS). Under this contract the automated junction formation equipment to be developed involves a new system design incorporating a modified, government-owned, JPL-controlled ion implanter into a Spire-developed pulsed electron beam annealer and wafer transport system. When modified, the ion implanter will deliver a 16 mA beam of /sup 31/P/sup +/ ions with a fluence of 2.5 x 10/sup 15/ ions per square centimeter at an energy of 10 keV. The throughput design goal rate for the junction processor is 10/sup 7/ four-inch-diameter wafers per year.

  13. Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

    NASA Technical Reports Server (NTRS)

    Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

    1984-01-01

    The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

  14. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    NASA Astrophysics Data System (ADS)

    Shen, Haoting

    The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and

  15. High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

    NASA Technical Reports Server (NTRS)

    Daud, Taher (Inventor); Kachare, Akaram H. (Inventor)

    1986-01-01

    A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

  16. New implantation techniques for improved solar cell junctions

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Bunker, S. N.

    1982-01-01

    Ion implantation techniques offering improved cell performance and reduced cost have been studied. These techniques include non-mass-analyzed phosphorus implantation, argon implantation gettering, and low temperature boron annealing. It is found that cells produced by non-mass-analyzed implantation perform as well as mass-analyzed controls, and that the cell performance is largely independent of process parameters. A study of argon implantation gettering shows no improvement over non-gettered controls. Results of low temperature boron annealing experiments are presented.

  17. Results from an International Measurement Round Robin of III-V Triple Junction Solar Cells under Air Mass Zero

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip; Scheiman, Chris; Goodbody, Chris; Baur, Carsten; Sharps, Paul; Imaizumi, Mitsuru; Yoo, Henry; Sahlstrom, Ted; Walters, Robert; Lorentzen, Justin; Nocerino, John; Khan, Osman; Cravens, Robert; Valles, Juan; Toporow, Chantal; Gomez, Trinidad,; Bazan, Loreto Pazos; Bailey, Sheila

    2006-01-01

    This paper reports the results of an international measurement round robin of monolithic, triple-junction, GaInP/GaAs/Ge space solar cells. Eight laboratories representing national labs, solar cell vendors and space solar cell consumers, measured cells using in-house reference cells and compared those results to measurements made where each lab used the same set of reference cells. The results show that most of the discrepancy between laboratories is likely due to the quality of the standard cells rather than the measurement system or solar simulator used.

  18. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    DOE PAGESBeta

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  19. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    SciTech Connect

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  20. InP-based composite substrates for four junction concentrator solar cells

    NASA Astrophysics Data System (ADS)

    Tauzin, Aurélie; Lagoutte, Emmanuelle; Salvetat, Thierry; Guelfucci, Jude; Bogumilowicz, Yann; Imbert, Bruno; Fournel, Frank; Reboh, Shay; Luce, Flavia Piegas; Lecouvey, Christophe; Chaira, Tarik; Carron, Véronique; Moriceau, Hubert; Duvernay, Julien; Signamarcheix, Thomas; Drazek, Charlotte; Charles-Alfred, Cédric; Ghyselen, Bruno; Guiot, Eric; Tibbits, Thomas; Beutel, Paul; Dimroth, Frank

    2015-09-01

    A photovoltaics conversion efficiency of 46% at 508 suns concentration was recently demonstrated with a four-junction solar cell consisting in a GaAs-based top tandem cell transferred onto an InP-based bottom tandem cell, by means of wafer bonding. We have successfully produced and characterized different InPOS (for InP-On-Substrate) composite substrates, that could advantageously replace fragile and expensive InP bulk wafers for the growth of the bottom tandem cell. The InPOS composite substrates include a thin top InP layer with thickness below 1µm, transferred onto a host substrate using the Smart Cut™ layer transfer technology. We developed InP-On-GaAs, InP-On-Ge and InP-On-Sapphire substrates with surface and crystal qualities similar to the InP bulk ones. A low electrical resistance of 1.4mΩ.cm² was measured along the InP transferred layer and the bonding interface. An epitaxial bottom tandem cell was grown on an InPOS substrate, and the corresponding PL behavior was found identical to that of cells grown on InP bulk reference. The InP-based composite substrates are then very well suited for the fabrication of advanced devices like four-junction solar cells.

  1. Stability of single and tandem junction a-Si:H solar cells grown using the ECR process

    SciTech Connect

    Dalal, V.L.; Maxson, T.; Girvan, R.; Haroon, S.

    1997-07-01

    The authors report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:H/A-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). They show that devices with high fill factors can be made using the H-ECR process. They also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show very little degradation even after 500 hours of illumination under 2 x sunlight illumination.

  2. Reduction of solar cell efficiency by bulk defects across the back-surface-field junction

    NASA Technical Reports Server (NTRS)

    Sah, C. T.; Yamakawa, K. A.; Lutwack, R.

    1982-01-01

    The degradation of solar cell performance due to bulk defects distributed across the back-surface field junction is analyzed in terms of a three-region developed-perimeter model. Families of curves are computed and their physical significance is discussed in detail with reference to three parameters used to characterize the defects: defect area, defect density, and defect surface recombination velocity. A reduction in the open-circuit voltage due to the presence of a defect is expressed as a function of the defect area, density, cell thickness, and defect surface recombination velocity. Numerical examples are presented to illustrate the importance of the particular defect parameters.

  3. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires

    NASA Astrophysics Data System (ADS)

    Yu, Linwei; O'Donnell, Benedict; Foldyna, Martin; Cabarrocas, Pere Roca i.

    2012-05-01

    Constructing radial junction hydrogenated amorphous silicon (a-Si:H) solar cells on top of silicon nanowires (SiNWs) represents a promising approach towards high performance and cost-effective thin film photovoltaics. We here develop an all-in situ strategy to grow SiNWs, via a vapour-liquid-solid (VLS) mechanism on top of ZnO-coated glass substrate, in a plasma-enhanced chemical vapour deposition (PECVD) reactor. Controlling the distribution of indium catalyst drops allows us to tailor the as-grown SiNW arrays into suitable size and density, which in turn results in both a sufficient light trapping effect and a suitable arrangement allowing for conformal coverage of SiNWs by subsequent a-Si:H layers. We then demonstrate the fabrication of radial junction solar cells and carry on a parametric study designed to shed light on the absorption and quantum efficiency response, as functions of the intrinsic a-Si:H layer thickness and the density of SiNWs. These results lay a solid foundation for future structural optimization and performance ramp-up of the radial junction thin film a-Si:H photovoltaics.

  4. 17.6%-Efficient radial junction solar cells using silicon nano/micro hybrid structures.

    PubMed

    Lee, Kangmin; Hwang, Inchan; Kim, Namwoo; Choi, Deokjae; Um, Han-Don; Kim, Seungchul; Seo, Kwanyong

    2016-08-14

    We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm(2) exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm(-2) because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells. PMID:27405387

  5. Junction silicon solar cells made with molecular beam glow discharge bombardment

    SciTech Connect

    Caine, E.J.

    1982-01-01

    The fabrication of silicon PN junction solar cells with molecular implanted emitter regions is described. A simple, economical high current (0.5 mA/cm/sup 2/), low voltage (4-6 kV) glow discharge apparatus without any ion mass separation is used for implantation. The discharge beam is characterized with a current-voltage conduction curve, radial profile of target sheet resistance and operating temperature of implant target. Molecular implantation compounds discussed include: boron trifluoride, trimethyl borate, boron trichloride, trimethyl phosphite, arsenic trifluoride, phosphorus trichloride, phosphorus oxychloride and arsenic trichloride. Annealing is accomplished with a Q-switched ruby laser and with a standard diffusion furnace. Solar cell performance parameters (conversion efficiency, quantum efficiency and junction ideality) are compared with cells conventionally implanted at 30 keV with /sup 11/B and /sup 31/P and cells made with a standard open tube phosphorus oxychloride diffusion. Cell substrate thickness was found to limit short circuit current. Total area simulated AM1 power conversion efficiencies of molecular cells without antireflection coatings or backsurface fields are at best 8.2% as compared to 9.0% for conventional implanted or diffused devices. To achieve optimum performance, laser light had to be incorporated in the molecular implant annealing procedure.

  6. Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

    PubMed

    Kim, Hong-Sik; Patel, Malkeshkumar; Park, Hyeong-Ho; Ray, Abhijit; Jeong, Chaehwan; Kim, Joondong

    2016-04-01

    Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects. PMID:26971560

  7. Tripple Junction Solar Cells With 30.0% Efficiency And Next Generation Cell Concepts

    NASA Astrophysics Data System (ADS)

    Kostler, W.; Meusel, M.; Kubera, T.; Torunski, T.

    2011-10-01

    This paper presents the data of the AZUR SPACE 3G30 cell. With its 30% BOL efficiency for AM0, it marks the final stage of lattice-matched space triple-junction cells. Furthermore, a summary is given on the roadmap for the development of future cell concept in terms of higher efficiency and increase of cell size.

  8. Development of a High Efficiency UVR/IRR Coverglass for Triple Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Russell, John; Jones, Glenn; Hall, James

    2007-01-01

    Cover glasses have been a necessary and integral part of space solar arrays since their inception. The main function of the cover glass is to protect the underlying solar cell from the harsh radiation environment of space. They are formed either from fused silica or specially formulated ceria doped glass types that are resistant to radiation damage, for example Pilkington's CMX, CMG, CMO. Solar cells have steadily increased in performance over the past years, from Silicon cells through textured Silicon cells to GaAs cells and the multijunction cells of today. The optimum coverglass solution for each of these cells has been different. The glass itself has also evolved. In some cases it has had its expansion coefficient matched to the cell substrate material, and in addition, added value has been derived from the application of thin film optical coatings to the coverglass. In the majority of cases this has taken the form of a single layer of MgF2 which acts as an antireflection coating. There are also conductive coatings to address electrostatic discharge issues (ESD) and Ultra Violet Reflective (UVR) and Infrared Reflective (IRR) coatings designed for thermal enhancement. Each type of coating can be applied singly or in combination. This paper describes a new type of UVR/IRR (or blue red reflector BRR) specifically designed for triple junction solar cells. For space applications, where radiation is the principal mechanism for removing heat from the satellite, it is the emittance and solar absorptance that primarily determine the temperature of the array. It is therefore essential that any coatings designed to have an effect on the temperature by reducing the solar absorption have a minimal effect on the overall emittance.

  9. Simulation of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell under Concentrated Light

    NASA Astrophysics Data System (ADS)

    Sakurada, Yuya; Ota, Yasuyuki; Nishioka, Kensuke

    2011-04-01

    Using an equivalent circuit model, the temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under concentrated light conditions were analyzed in detail. The current-voltage (I-V) characteristics of the single-junction solar cells (InGaP, InGaAs, and Ge solar cells) were measured at various temperatures. From the dark I-V characteristics of each single-junction solar cell, the diode parameters and temperature exponents were extracted. The extracted diode parameters and temperature exponents were applied to the equivalent circuit model for the triple-junction solar cell, and the solar-cell performance was calculated. There was good agreement between the measured and calculated I-V characteristics of the triple-junction solar cell at various temperatures under concentrated light conditions.

  10. Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells

    NASA Astrophysics Data System (ADS)

    Jäckle, Sara; Mattiza, Matthias; Liebhaber, Martin; Brönstrup, Gerald; Rommel, Mathias; Lips, Klaus; Christiansen, Silke

    2015-08-01

    We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n-Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/PEDOT:PSS heterojunction is presented. The current-voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT:PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction.

  11. Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells

    PubMed Central

    Jäckle, Sara; Mattiza, Matthias; Liebhaber, Martin; Brönstrup, Gerald; Rommel, Mathias; Lips, Klaus; Christiansen, Silke

    2015-01-01

    We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n-Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/PEDOT:PSS heterojunction is presented. The current-voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT:PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction. PMID:26278010

  12. Unravelling the working junction of aqueous-processed polymer-nanocrystal solar cells towards improved performance.

    PubMed

    Chen, Zhaolai; Du, Xiaohang; Jin, Gan; Zeng, Qingsen; Liu, Fangyuan; Yang, Bai

    2016-06-21

    Hybrid solar cells (HSCs) based on aqueous polymers and nanocrystals are attractive due to their environmental friendliness and cost effectiveness. In this study, HSCs are fabricated from a series of water-soluble polymers with different highest occupied molecular orbital (HOMO) levels and nanocrystals with different Fermi levels. We demonstrate that the working principle of the aqueous-processed HSCs follows a p-n junction instead of a type-II heterojunction. The function of the polymer is to provide an interface dipole which can improve the build-in potential of the HSCs. Subsequently, the aqueous-processed HSCs are optimized following a p-n junction and an improved PCE of 5.41% is achieved, which is the highest for aqueous-processed HSCs. This study will provide instructive guidelines for the development of aqueous-processed HSCs. PMID:27229447

  13. Gap/silicon Tandem Solar Cell with Extended Temperature Range

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A. (Inventor)

    2006-01-01

    A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

  14. Theoretical results on the double-collecting tandem junction solar cell. [radiation damage

    NASA Technical Reports Server (NTRS)

    Goradia, C.; Vaughn, J.; Baraona, C. R.

    1980-01-01

    Results of computer calculations using a one dimensional model of the silicon tandem junction solar cell with both front and back current collection are presented. Using realistically achievable geometrical and material parameters, the model predicts that with base widths of 50 micrometers and 100 micrometers and base resistivities between 1 ohm/cm and 20 ohm/cm, beginning of life efficiencies of 14% to 17% and end of life efficiencies of 12% to 14%, after about seven years in synchronous orbit, can be obtained.

  15. Study of novel chemical surface passivation techniques on GaAs pn junction solar cells

    SciTech Connect

    Mauk, M.G.; Xu, S.; Arent, D.J.; Mertens, R.P.; Borghs, G.

    1989-01-16

    Novel methods of GaAs surface passivation are investigated. Passivation is acheived by simple chemical treatments using aqueous solutions of Na/sub 2/S, KOH, RuCl/sub 3/, and K/sub 2/Se. GaAs pn homojunction solar cells are used to evaluate the effectiveness of these passivation techniques. A significant reduction in minority-carrier surface recombination velocity is demonstrated. In the best case, the surface recombination velocity decreased from 5 x 10/sup 6/ cm/s (untreated surface) to 10/sup 3/ cm/s. In addition, we observe improvements in solar cell photogenerated current, short wavelength spectral response, open-circuit voltage, and junction ''dark'' current.

  16. Computer modeling of a two-junction, monolithic cascade solar cell

    NASA Technical Reports Server (NTRS)

    Lamorte, M. F.; Abbott, D.

    1979-01-01

    The theory and design criteria for monolithic, two-junction cascade solar cells are described. The departure from the conventional solar cell analytical method and the reasons for using the integral form of the continuity equations are briefly discussed. The results of design optimization are presented. The energy conversion efficiency that is predicted for the optimized structure is greater than 30% at 300 K, AMO and one sun. The analytical method predicts device performance characteristics as a function of temperature. The range is restricted to 300 to 600 K. While the analysis is capable of determining most of the physical processes occurring in each of the individual layers, only the more significant device performance characteristics are presented.

  17. Laser annealing of ion implanted CZ silicon for solar cell junction formation

    NASA Technical Reports Server (NTRS)

    Katzeff, J. S.

    1981-01-01

    The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

  18. Aluminum oxide passivated radial junction sub-micrometre pillar array textured silicon solar cells

    NASA Astrophysics Data System (ADS)

    Pudasaini, Pushpa Raj; Elam, David; Ayon, Arturo A.

    2013-06-01

    We report radial, p-n junction, sub-micrometre, pillar array textured solar cells, fabricated on an n-type Czochralski silicon wafer. Relatively simple processing schemes such as metal-assisted chemical etching and spin on dopant techniques were employed for the fabrication of the proposed solar cells. Atomic layer deposition (ALD) grown aluminum oxide (Al2O3) was employed as a surface passivation layer on the B-doped emitter surface. In spite of the fact that the sub-micrometre pillar array textured surface has a relatively high surface-to-volume ratio, we observed an open circuit voltage (VOC) and a short circuit current density (JSC) as high as 572 mV and 29.9 mA cm-2, respectively, which leads to a power conversion efficiency in excess of 11.30%, for the optimized structure of the solar cell described herein. Broadband omnidirectional antireflection effects along with the light trapping property of the sub-micrometre, pillar array textured surface and the excellent passivation quality of the ALD-grown Al2O3 on the B-doped emitter surface were responsible for the enhanced electrical performance of the proposed solar cells.

  19. Method for forming p-n junctions and solar-cells by laser-beam processing

    DOEpatents

    Narayan, Jagdish; Young, Rosa T.

    1979-01-01

    This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

  20. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    NASA Astrophysics Data System (ADS)

    Shen, Haoting

    The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and

  1. High voltage series connected tandem junction solar battery

    DOEpatents

    Hanak, Joseph J.

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  2. Progress in GaAs/CuInSe2 tandem junction solar cells

    NASA Technical Reports Server (NTRS)

    Kim, N. P.; Burgess, R. M.; Mickelsen, R. A.; Stanbery, B. J.; Mcclelland, R. W.; King, B. D.; Gale, R. P.

    1991-01-01

    Much more power is required for spacecraft of the future than current vehicles. To meet this increased demand for power while simultaneously meeting other requirements for launch, deployment, and maneuverability, the development of higher-efficiency, lighter-weight, and more radiation resistant photovoltaic cells is essential. Mechanically stacked tandem junction solar cells based on (AlGaAs)GaAs thin film CLEFT (Cleavage of Lateral Epitaxial Film for Transfer) top cells and CuInSe2(CIS) thin film bottom cells are being developed to meet these power needs. The mechanically stacked tandem configuration is chosen due to its interconnect flexibility allowing more efficient array level performance. It also eliminates cell fabrication processing constraints associated with monolithically integrated multi-junction approaches, thus producing higher cell fabrication yields. The GaAs cell is used as the top cell due to its demonstrated high efficiency, and good radiation resistance. Furthermore, it offers a future potential for bandgap tuning using AlGaAs as the absorber to maximize cell performance. The CuInSe2 cell is used as the bottom cell due to superb radiation resistance, stability, and optimal bandgap value in combination with an AlGaAs top cell. Since both cells are incorporated as thin films, this approach provides a potential for very high specific power. This high specific power (W/kg), combined with high power density (W/sq m) resulting from the high efficiency of this approach, makes these cells ideally suited for various space applications.

  3. High performance anti-reflection coatings for broadband multi-junction solar cells

    SciTech Connect

    AIKEN,DANIEL J.

    2000-02-23

    The success of bandgap engineering has made high efficiency broadband multi-junction solar cells possible with photo-response out to the band edge of Ge. Modeling has been conducted which suggests that current double layer anti-reflection coating technology is not adequate for these devices in certain cases. Approaches for the development of higher performance anti-reflection coatings are examined. A new AR coating structure based on the use of Herpin equivalent layers is presented. Optical modeling suggests a decrease in the solar weighted reflectance of over 2.5{percent} absolute as a result. This structure requires no additional optical material development and characterization because no new optical materials are necessary. Experimental results and a sensitivity analysis are presented.

  4. Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

    SciTech Connect

    Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

    2012-06-01

    We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. We found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several μm were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.

  5. GaInNAs/Ge (1.10/0.67 eV) double-junction solar cell grown by metalorganic chemical vapor deposition for high efficiency four-junction solar cell application

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaobin; Chen, Bingzhen; Pan, Xu; Wang, Lei; Ma, Difei; Zhang, Yang; Yang, Cuibai; Wang, Zhiyong

    2015-12-01

    GaInNAs materials with narrow bandgaps of 1.10 eV have been grown on a Ge substrate by metalorganic chemical vapor deposition to fabricate GaInNAs/Ge (1.10/0.67 eV) double-junction solar cells. We have studied the photovoltaic characteristics and the external quantum efficiencies of the double-junction cells with various annealing conditions and different GaInNAs base layer thicknesses. The best external quantum efficiency is obtained from the double-junction cell with a 1170 nm thick GaInNAs base layer annealed at 675 °C for 30 min. Under AM1.5G illumination, the best double-junction cell has a short circuit current density (J SC) as 23.63 mA cm-2, which is dominated by the J SC of the GaInNAs subcell.

  6. Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.

    1981-01-01

    New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

  7. The Effects of MEO Radiation Environment on Triple-Junction GaAs Solar Cells

    NASA Astrophysics Data System (ADS)

    Xin, Gao; Sheng-sheng, Yang; Yun-fei, Wang; Zhan-zu, Feng

    The effects of MEO (Altitude 20,000 km, Inclination 56°) radiation environment on the degradation of triple-junction GaAs cells (Manufactured in China) are investigated to provide the reference for solar array design. The results are presented on the performance degradation of triple-junction GaAs cells with various thicknesses of shielding silica coverglass in the MEO radiation environment, using the displacement damage dose methodology for analyzing and modeling. Degradation at different electron energies has been correlated with displacement damage dose. The maximum power of the cells without coverglass will be seriously degraded, reducing it to below 20% of the initial value by the accumulating proton dose at the end of a 1-year-mission. However, using a 100-μm-thick coveglass, the maximum power of the cells can be maintanined at 90% of the initial value. While a 100-μm-thick silica coverglass can practically block off the effects of protons on the GaAs cells in the MEO environment, its effect is not so pronounced for electrons. The use of the coverglass is of vital importance for shielding the damages by low energy protons in the MEO orbit.

  8. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

    SciTech Connect

    Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J.; Olson, J. M.; McMahon, W. E.; Moriarty, T. E.; Kiehl, J. T.; Romero, M. J.; Norman, A. G.; Jones, K. M.

    2008-05-01

    We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.

  9. Use of amorphous silicon tandem junction solar cells for hydrogen production in a photoelectrochemical cell

    NASA Astrophysics Data System (ADS)

    Stavrides, Alex; Kunrath, Augusto; Hu, Jian; Treglio, Richard; Feldman, Ari; Marsen, Bjorn; Cole, Brian; Miller, Eric; Madan, Arun

    2006-08-01

    We report the use of amorphous silicon (a-Si) tandem junctions as part of an integral "hybrid" photoelectrochemical (PEC) cell to produce hydrogen directly from water using sunlight. The device configuration consists of stainless steel (SS)/ni IIpni Ip/ZnO/WO 3. When the device is immersed in an electrolyte and illuminated, O II is evolved at the WO 3/electrolyte interface and H II is produced at the counter electrode. A voltage >1.23V is required to split water; typically 1.6-1.8V are needed, taking account of losses in a practical water-splitting system. We use a-Si tandem cells, deposited by plasma-enhanced chemical vapor deposition, to supply this voltage. Current matching in the two a-Si subcells is achieved by altering the thicknesses of the two layers (i I and i II) while keeping their band gaps at ~1.75eV, which results in a device with an open circuit voltage >1.6V, short circuit current density (J sc) >6mA/cm2 (on SS substrates), and a fill factor >0.6. Deposition on a textured SnO II coated glass has resulted in J sc >9mA/cm2. Photoactive WO 3 films, deposited using the RF sputtering technique, have achieved photocurrents >3mA/cm2 at 1.6V vs. saturated calomel electrode (SCE). The PEC device operates at the point at which the WO 3 photocurrent IV curve and the a-Si (filtered by WO 3) light IV curve cross, leading to operating currents of 2.5mA/cm2 and solar-to-hydrogen (STH) conversion efficiency of >3%.

  10. "Direct" measurement of sheet resistance in inter-subcell layers of multi-junction solar cells

    NASA Astrophysics Data System (ADS)

    Rumyantsev, Valery D.; Larionov, Valery R.; Pokrovskiy, Pavel V.

    2015-09-01

    The multi-junction cells are sensitive to chromatic aberrations inherent to the lens-type concentrators. At spectrally and spatially inhomogeneous distribution of incident light, considerable lateral currents flow along the inter-subcell layers causing a voltage drop across corresponding sheet resistance and, consequently, a decrease in the cell conversion efficiency. The sheet resistance unit is Ohm-per-square that corresponds to the resistance between two bar-type electrodes on the opposite sides of a thin conductive square. A method of "direct" measurement of this parameter is proposed using lasers for local illumination of the strip-in-shape parts of a rectangular-in-form tested cell. These illuminated parts play a role of electrodes for a lateral current induced by photoexitation. Wavelengths of the lasers have to be chosen to generate photocurrents independently in the neighboring subcells, as well as locally in the upper and lower ones. SPICE model of the method is analyzed and experimental results on the InGaP/InGaAs/Ge triple-junction solar cells are presented.

  11. An induced junction photovoltaic cell

    NASA Technical Reports Server (NTRS)

    Call, R. L.

    1974-01-01

    Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

  12. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  13. Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

    NASA Technical Reports Server (NTRS)

    Shibib, M. A.; Lindholm, F. A.; Fossum, J. G.

    1979-01-01

    A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

  14. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  15. Characterizing the effects of silver alloying in chalcopyrite CIGS solar cells with junction capacitance methods

    SciTech Connect

    Erslev, Peter T.; Hanket, Gregory M.; Shafarman, William N.; Cohen, J. David

    2009-04-01

    A variety of junction capacitance-based characterization methods were used to investigate alloys of Ag into Cu(In1-xGax)Se2 photovoltaic solar cells over a broad range of compositions. These alloys show encouraging trends of increasing VOC with increasing Ag content, opening the possibility of wide-gap cells for use in tandem device applications. Drive level capacitance profiling (DLCP) has shown very low free carrier concentrations for all Ag-alloyed devices, in some cases less than 1014 cm-3, which is roughly an order of magnitude lower than that of CIGS devices. Transient photocapacitance spectroscopy has revealed very steep Urbach edges, with energies between 10 meV and 20 meV, in the Ag-alloyed samples. This is in general lower than the Urbach edges measured for standard CIGS samples and suggests a significantly lower degree of structural disorder.

  16. Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Li, S. S.; Sah, C. T.

    1975-01-01

    Fundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.

  17. Comparison of Theoretical Efficiencies of Multi-junction Concentrator Solar Cells

    SciTech Connect

    Kurtz, S.; Myers, D.; McMahon, W. E.; Geisz, J.; Steiner, M.

    2008-01-01

    Champion concentrator cell efficiencies have surpassed 40% and now many are asking whether the efficiencies will surpass 50%. Theoretical efficiencies of >60% are described for many approaches, but there is often confusion about the theoretical efficiency for a specific structure. The detailed balance approach to calculating theoretical efficiency gives an upper bound that can be independent of material parameters and device design. Other models predict efficiencies that are closer to those that have been achieved. Changing reference spectra and the choice of concentration further complicate comparison of theoretical efficiencies. This paper provides a side-by-side comparison of theoretical efficiencies of multi-junction solar cells calculated with the detailed balance approach and a common one-dimensional-transport model for different spectral and irradiance conditions. Also, historical experimental champion efficiencies are compared with the theoretical efficiencies.

  18. Tandem photovoltaic solar cell with III-V diffused junction booster cell

    SciTech Connect

    Fraas, L.M.; Avery, J.E.; Girard, G.R.

    1992-02-25

    This patent describes a GaAs/GaSb tandem solar cell having improved conversion efficiency. It comprises: a GaAs upper cell having a predetermined bandgap selected for optimal performance of the tandem solar cell; a GaSb booster cell positioned beneath the GaAs upper cell to receive light transmitted through the GaAs upper cell and responsive to such light; and light conditioning means associated with the upper cell and the booster cell for achieving and energy conversion efficiency of at least 31% AMO. This patent also describes the cell as defined in claim 2, wherein the light conditioning means includes a prismatic coverglass for optically eliminating grid line obscuration losses on at least the upper cell and a concentrating lens for focusing solar energy onto an upper surface of the upper cell.

  19. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  20. Can plasmonic Al nanoparticles improve absorption in triple junction solar cells?

    NASA Astrophysics Data System (ADS)

    Yang, L.; Pillai, S.; Green, M. A.

    2015-07-01

    Plasmonic nanoparticles located on the illuminated surface of a solar cell can perform the function of an antireflection layer, as well as a scattering layer, facilitating light-trapping. Al nanoparticles have recently been proposed to aid photocurrent enhancements in GaAs photodiodes in the wavelength region of 400-900 nm by mitigating any parasitic absorption losses. Because this spectral region corresponds to the top and middle sub-cell of a typical GaInP/GaInAs/Ge triple junction solar cell, in this work, we investigated the potential of similar periodic Al nanoparticles placed on top of a thin SiO2 spacer layer that can also serve as an antireflection coating at larger thicknesses. The particle period, diameter and the thickness of the oxide layers were optimised for the sub-cells using simulations to achieve the lowest reflection and maximum external quantum efficiencies. Our results highlight the importance of proper reference comparison, and unlike previously published results, raise doubts regarding the effectiveness of Al plasmonic nanoparticles as a suitable front-side scattering medium for broadband efficiency enhancements when compared to standard single-layer antireflection coatings. However, by embedding the nanoparticles within the dielectric layer, they have the potential to perform better than an antireflection layer and provide enhanced response from both the sub-cells.

  1. Can plasmonic Al nanoparticles improve absorption in triple junction solar cells?

    PubMed Central

    Yang, L.; Pillai, S.; Green, M. A.

    2015-01-01

    Plasmonic nanoparticles located on the illuminated surface of a solar cell can perform the function of an antireflection layer, as well as a scattering layer, facilitating light-trapping. Al nanoparticles have recently been proposed to aid photocurrent enhancements in GaAs photodiodes in the wavelength region of 400–900 nm by mitigating any parasitic absorption losses. Because this spectral region corresponds to the top and middle sub-cell of a typical GaInP/GaInAs/Ge triple junction solar cell, in this work, we investigated the potential of similar periodic Al nanoparticles placed on top of a thin SiO2 spacer layer that can also serve as an antireflection coating at larger thicknesses. The particle period, diameter and the thickness of the oxide layers were optimised for the sub-cells using simulations to achieve the lowest reflection and maximum external quantum efficiencies. Our results highlight the importance of proper reference comparison, and unlike previously published results, raise doubts regarding the effectiveness of Al plasmonic nanoparticles as a suitable front-side scattering medium for broadband efficiency enhancements when compared to standard single-layer antireflection coatings. However, by embedding the nanoparticles within the dielectric layer, they have the potential to perform better than an antireflection layer and provide enhanced response from both the sub-cells. PMID:26138405

  2. Status of diffused junction p+n InP solar cells for space applications

    SciTech Connect

    Faur, M.; Goradia, C.; Faur, M.; Fatemi, N.S.; Jenkins, P.P.; Flood, D.J.; Brinker, D.J.; Wilt, D.M.; Bailey, S.; Goradia, M.

    1994-09-01

    Recently, the authors have succeeded in fabricating diffused junction p{sup +}n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V{sub OC}) of 887.6 mV, which, to the best of their knowledge, is higher than previously reported V{sub OC} values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p{sup +}n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p{sup +} InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

  3. Status of diffused junction p+n InP solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Goradia, C.; Faur, Maria; Fatemi, N. S.; Jenkins, P. P.; Flood, D. J.; Brinker, D. J.; Wilt, D. M.; Bailey, S.; Goradia, M.

    1994-01-01

    Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

  4. Status of Diffused Junction p(+)n InP Solar Cells for Space Applications

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Faur, Maria; Flood, D. J.; Brinker, D. J.; Goradia, C.; Fatemi, N. S.; Jenkins, P. P.; Wilt, D. M.; Bailey, S.

    1994-01-01

    Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

  5. Equivalent electron fluence for solar proton damage in GaAs shallow junction cells

    NASA Astrophysics Data System (ADS)

    Wilson, J. W.; Stock, L. V.

    The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) = A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) = 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.

  6. Equivalent electron fluence for solar proton damage in GaAs shallow junction cells

    NASA Technical Reports Server (NTRS)

    Wilson, J. W.; Stock, L. V.

    1984-01-01

    The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) = A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) = 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.

  7. High efficiency triple-junction solar cells employing biomimetic antireflective structures

    NASA Astrophysics Data System (ADS)

    Chiu, Meng-Yih; Chang, Chia-Hua; Chang, Feng-Yu; Yu, Peichen

    2011-02-01

    In this work, we demonstrate a thorough device design, fabrication, characterization, and analysis of biomimetic antireflective structures implemented on a Ga0.5In0.5P/GaAs/Ge triple-junction solar cell. The sub-wavelength structures are fabricated on a silicon nitride passivation layer using polystyrene nanosphere lithography followed by anisotropic etching. The fabricated structures enhance optical transmission in the ultraviolet wavelength range, compared to a conventional single-layer antireflective coating (ARC). The transmission improvement contributes to the enhanced photocurrent, which is also verified by the external quantum efficiency characterization of fabricated solar cells. Under one-sun illumination, the short-circuit current of a cell with a biomimetic structures is enhanced by 24.1% and 2.2% due to much improved optical transmission and current matching, compared to cells without an ARC and with a conventional ARC, respectively. Further optimizations of the biomimetic structures including the periodicity and etching depth are conducted by performing comprehensive calculations based on a rigorous couple-wave analysis method.

  8. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    NASA Astrophysics Data System (ADS)

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-01

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  9. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    SciTech Connect

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  10. Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

    NASA Technical Reports Server (NTRS)

    Sinharoy, Samar; Patton, Martin O.; Valko, Thomas M., Sr.; Weizer, Victor G.

    2002-01-01

    Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

  11. InP tunnel junction for InGaAs/InP tandem solar cells

    SciTech Connect

    Vilela, M.F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-10-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). The authors have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp {minus}19)/cu cm and 1 x 10(exp {minus}19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth`s conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp {minus}4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga(0.47)As, and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications.

  12. Theoretical results on the tandem junction solar cell based on its Ebers-Moll transistor model

    NASA Technical Reports Server (NTRS)

    Goradia, C.; Vaughn, J.; Baraona, C. R.

    1980-01-01

    A one-dimensional theoretical model of the tandem junction solar cell (TJC) with base resistivity greater than about 1 ohm-cm and under low level injection has been derived. This model extends a previously published conceptual model which treats the TJC as an npn transistor. The model gives theoretical expressions for each of the Ebers-Moll type currents of the illuminated TJC and allows for the calculation of the spectral response, I(sc), V(oc), FF and eta under variation of one or more of the geometrical and material parameters and 1MeV electron fluence. Results of computer calculations based on this model are presented and discussed. These results indicate that for space applications, both a high beginning of life efficiency, greater than 15% AM0, and a high radiation tolerance can be achieved only with thin (less than 50 microns) TJC's with high base resistivity (greater than 10 ohm-cm).

  13. Cost-effective platinum alloy counter electrodes for liquid-junction dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Li, Yanjuan; Tang, Qunwei; Yu, Liangmin; Yan, Xuefeng; Dong, Lei

    2016-02-01

    One of the challenges in developing advanced dye-sensitized solar cells (DSSCs) is the pursuit of cost-effective and robust counter electrodes (CEs). We present here the successful synthesis of binary PtxM100-x (M = Ni, Co, Fe) alloy nanostructures on Ti foil by a facile and environmental-friendly strategy for utilization as CEs in liquid-junction DSSCs. Due to the reasonable charge-transfer ability and excellent electrocatalytic activity, the resultant DSSC yields a promising power conversion efficiency (PCE) of 6.42% with binary Pt0.28Ni99.72 CE in comparison with 6.18% for pristine Pt CE based device. The easy synthesis, cost-effectiveness, and good electrocatalytic property may help the Pt0.28Ni99.72 nanostructure stand out as an alternative CE electrocatalyst in a DSSC.

  14. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  15. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

    NASA Astrophysics Data System (ADS)

    Mariani, Giacomo

    transparent electrode. The second design delves into an in-situ InGaP passivation shell to alleviate the deleterious recombination effects caused by surface states. The efficiency improvement is over six-fold, up to 6.63%, compared to unpassivated devices. Lastly, a p-i-n radial junction nanopillar solar cell highlights external quantum efficiencies in great agreement with numerical simulations. In such framework, the dome morphology of the top transparent contact is found to concentrate and intensify the optical field within the nanopillar active volume, resulting into resonance peaks in the quantum yield measurements, at 7.43% efficiency. These findings confirm the potential of 3D nanopillar solar cells as a cost-effective platform with respect to canonical thin-film photovoltaics.

  16. A comparison of light-harvesting performance of silicon nanocones and nanowires for radial-junction solar cells

    PubMed Central

    Li, Yingfeng; Li, Meicheng; Fu, Pengfei; Li, Ruike; Song, Dandan; Shen, Chao; Zhao, Yan

    2015-01-01

    Silicon nanorod based radial-junction solar cells are competitive alternatives to traditional planar silicon solar cells. In various silicon nanorods, nanocone is always considered to be better than nanowire in light-absorption. Nevertheless, we find that this notion isn’t absolutely correct. Silicon nanocone is indeed significantly superior over nanowire in light-concentration due to its continuous diameters, and thus resonant wavelengths excited. However, the concentrated light can’t be effectively absorbed and converted to photogenerated carriers, since its propagation path in silicon nanocone is shorter than that in nanowire. The results provide critical clues for the design of silicon nanorod based radial-junction solar cells. PMID:26113194

  17. A comparison of light-harvesting performance of silicon nanocones and nanowires for radial-junction solar cells.

    PubMed

    Li, Yingfeng; Li, Meicheng; Fu, Pengfei; Li, Ruike; Song, Dandan; Shen, Chao; Zhao, Yan

    2015-01-01

    Silicon nanorod based radial-junction solar cells are competitive alternatives to traditional planar silicon solar cells. In various silicon nanorods, nanocone is always considered to be better than nanowire in light-absorption. Nevertheless, we find that this notion isn't absolutely correct. Silicon nanocone is indeed significantly superior over nanowire in light-concentration due to its continuous diameters, and thus resonant wavelengths excited. However, the concentrated light can't be effectively absorbed and converted to photogenerated carriers, since its propagation path in silicon nanocone is shorter than that in nanowire. The results provide critical clues for the design of silicon nanorod based radial-junction solar cells. PMID:26113194

  18. Investigation of InGaP/(In)AlGaAs/GaAs triple-junction top cells for smart stacked multijunction solar cells grown using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sugaya, Takeyoshi; Mochizuki, Toru; Makita, Kikuo; Oshima, Ryuji; Matsubara, Koji; Okano, Yoshinobu; Niki, Shigeru

    2015-08-01

    We report high-quality InGaP/(In)AlGaAs/GaAs triple-junction solar cells fabricated using solid-source molecular beam epitaxy (MBE) for the first time. The triple-junction cells can be used as top cells for smart stacked multijunction solar cells. A growth temperature of 480 °C was found to be suitable for an (In)AlGaAs second cell to obtain high-quality tunnel junctions. The properties of AlGaAs solar cells were better than those of InAlGaAs solar cells when a second cell was grown at 480 °C. The high-quality InGaP/AlGaAs/GaAs solar cell had an impressive open-circuit voltage of 3.1 V. This result indicates that high-performance InGaP/AlGaAs/GaAs triple-junction solar cells can be fabricated using solid-source MBE.

  19. InP tunnel junction for InGaAs/InP tandem solar cells

    NASA Technical Reports Server (NTRS)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  20. Self-deposition of Pt nanoparticles on graphene woven fabrics for enhanced hybrid Schottky junctions and photoelectrochemical solar cells.

    PubMed

    Kang, Zhe; Tan, Xinyu; Li, Xiao; Xiao, Ting; Zhang, Li; Lao, Junchao; Li, Xinming; Cheng, Shan; Xie, Dan; Zhu, Hongwei

    2016-01-21

    In this study, we demonstrated a self-deposition method to deposit Pt nanoparticles (NPs) on graphene woven fabrics (GWF) to improve the performance of graphene-on-silicon solar cells. The deposition of Pt NPs increased the work function of GWF and reduced the sheet resistance of GWF, thereby improving the power conversion efficiency (PCE) of graphene-on-silicon solar cells. The PCE (>10%) was further enhanced via solid electrolyte coating of the hybrid Schottky junction in the photoelectrochemical solar cells. These results suggest that the combination of self-deposition of Pt NPs and solid-state electrolyte coating of graphene-on-silicon is a promising way to produce high performance graphene-on-semiconductor solar cells. PMID:26686903

  1. Wafer bonded 4-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells

    NASA Astrophysics Data System (ADS)

    Krause, Rainer; Piccin, Matteo; Blanc, Nicolas; Rico, Miguel Muñoz; Charles-Alfred, Cedric; Drazek, Charlotte; Guiot, Eric; Dimroth, Frank; Bett, Andreas; Grave, Matthias; Beutel, Paul; Karcher, Christian; Tibbits, Tom; Oliva, Eduard; Siefer, Gerald; Schachtner, Michael; Wekkeli, Alexander; Signamarcheix, Thomas

    2014-09-01

    Multiple-junction solar cells made from III-V compound semiconductors are delivering the highest solar-electric conversion efficiencies. Increasing the number of junctions offers the potential to reach higher efficiencies. Direct wafer bonding offers a unique opportunity to combine lattice mismatched materials through a permanent, electrically conductive and optically transparent interface. In addition, the use of Smart Cut ™ technology, associated with its material recycling capabilities allows from a cost perspective the use of expensive bulk material such as InP. Combination of both technologies opens new opportunities to deliver cost effective high efficiency solar cells. In this respect, we have been able to demonstrate a record efficiency of 44,7% with a wafer bonded 4-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cell with bandgap energies of 1.88/1.44//1.11/0.70 eV respectively. The bandgaps are chosen to be close to optimal for conversion under concentrated sunlight [1]. This paper presents the improvements made to achieve the world record result leading to higher efficiencies and lower cost.

  2. InGaAs axial-junction nanowire-array solar cells

    NASA Astrophysics Data System (ADS)

    Nakai, Eiji; Chen, Muyi; Yoshimura, Masatoshi; Tomioka, Katsuhiro; Fukui, Takashi

    2015-01-01

    Axial p-i-n junction nanowire (NW) solar cells (SCs) with a position-controlled GaAs-based NW array were fabricated by selective-area metal organic vapor phase epitaxy (SA-MOVPE). The measured electron-beam-induced current (EBIC) signals showed the formation of an axial p-i-n junction, which confirms power generation under sunlight illumination. The series resistance of the NW SCs is much higher than that of conventional planar SCs based on Si or other III-V compound semiconductors. The main difficulty concerning the fabrication of these NW SCs is the degradation of series resistance between the GaAs-based NWs and the indium-tin oxide (ITO) deposited as a transparent electrode. The series resistance of the fabricated GaAs-based NW SCs was reduced by introducing a tin doping contact layer between the ITO and the NW array, which is formed by pulse doping. As a result of this improved structure, the fabricated SCs exhibited an open-circuit voltage of 0.544 V, a short-circuit current of 18.2 mA/cm2, and a fill factor of 0.721 for an overall conversion efficiency of 7.14% under AM1.5G illumination. The series resistance of the SCs could be decreased to 0.132 Ω·cm2, which is one order of magnitude lower than that of the SC without a highly doped contact layer. This reduced series resistance indicates that nanostructure SCs with transparent electrodes and multijunction NW SCs with high efficiencies can be fabricated on a commercial basis in the near future.

  3. Limitations of the open circuit voltage of induced junction silicon solar cells due to surface recombination

    NASA Astrophysics Data System (ADS)

    Girisch, R.; Mertens, R. P.; van Overstraeten, R.

    Surface recombination is investigated both theoretically and experimentally under the positively charged insulator between the grating fingers in an induced-junction grating-type solar cell. The numerical solution for the recombination current as a function of internal voltage in the air-insulator-silicon system has been obtained, using generalized equations. The impact of a fixed insulator charge and of the distribution and density of interface states on the recombination current is investigated. In order to verify the calculations, a grating-type cell with a semitransparent electrode was developed. In this structure, the amount of inversion layer charge can be controlled by the voltage applied to the electrode. It is shown that (1) surface recombination may become a limiting mechanism in reaching high open circuit voltages; (2) high open circuit voltages are possible, provided a proper combination is chosen of insulator charge and interface state density; and (3) even when the interface state density increases linearly with the fixed insulator charge, the device performance improves with increasing insulator charge.

  4. Nanostructured p-type CZTS thin films prepared by a facile solution process for 3D p-n junction solar cells.

    PubMed

    Park, Si-Nae; Sung, Shi-Joon; Sim, Jun-Hyoung; Yang, Kee-Jeong; Hwang, Dae-Kue; Kim, JunHo; Kim, Gee Yeong; Jo, William; Kim, Dae-Hwan; Kang, Jin-Kyu

    2015-07-01

    Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the nanoporous CZTS thin films by chemical bath deposition. The photovoltaic properties of 3D p-n junction CZTS solar cells are predominantly affected by the scale of CZTS nanograins, which is easily controlled by the sulfurization temperature of CZTS precursor films. The scale of CZTS nanograins determines the minority carrier transportation within the 3D p-n junction between CZTS and CdS, which are closely related with the photocurrent of series resistance of 3D p-n junction solar cells. 3D p-n junction CZTS solar cells with nanograins below 100 nm show power conversion efficiency of 5.02%, which is comparable with conventional CZTS thin film solar cells. PMID:26061271

  5. An expert system approach to the optimal design of single-junction and multijunction tandem solar cells

    SciTech Connect

    Yeh, C.S.

    1988-01-01

    The use of an expert system approach to the optimal design of single-junction and multijunction solar cells is a potential new design tool in photovoltaics. This study presents results of a comprehensive study of this new design method. To facilitate the realistic optimal design of the two-terminal monolithic single-junction and multijunction tandem solar cells, a rule-based system was established by adopting the experimental data and/or semi-empirical formulae used today for those design parameters. A numerical simulation based on the displacement damage theory was carried out to study the degradation of AlGaAs/GaAs solar cells after proton or electron irradiation. The damage constant of the minority-carrier diffusion length, an important design parameter of a solar cell for space application, was calculated. An efficient Box complex optimization technique with minor modifications is analyzed and applied to accelerate the convergence rate of the algorithm. Design rules were implemented in order to reduce the search space of the optimal design and to make a compromise in the tradeoff between the conflicting criteria for selection. Realistic optimal design of these solar cells were obtained and verified from the expert system and then compared with state-of-the-art technology.

  6. The epitaxial growth of high efficiency inverted metamorphic triple junction solar cell for CPV application

    NASA Astrophysics Data System (ADS)

    Jingfeng, Bi; Senlin, Li; Guanzhou, Liu; Meijia, Yang; Mingyang, Li; Weiping, Xiong; Minghui, Song; Guijiang, Lin; Wenjun, Chen; Duxiang, Wang

    2015-09-01

    In this paper, 3J-IMM solar cells were studied in comparison with 3J-LM solar cells grown by MOCVD. The structural characteristics were studied by HRXRD, HRTEM and SIMS, which showed a high crystal quality of the metamorphic sub-cell. The solar cell performance in terms of I-V curves and EQE was investigated between the different solar cells structures. The current of the IMM solar cell is almost equal to the LM ´monitor solar cell. Under AM 1.5D, 1000 suns conditions, an Isc of 14.29 A, Voc of 3.538 V, FF of 83.9 %, and an efficiency of 42.3 % were achieved for the 3J-IMM solar cell with a chip size of 1.0 cm2, which is an absolute 2.9% higher than that of a 3J-LM solar cell in conversion efficiency. The excess current contribution from the Ge bottom cell in the 3J-LM solar cells is eliminated, accompanied with a 0.3V increase in Voc for the 3J-IMM solar cells.

  7. Organic/inorganic hybrid pn-junction between copper phthalocyanine and CdSe quantum dot layers as solar cells

    NASA Astrophysics Data System (ADS)

    Saha, Sudip K.; Guchhait, Asim; Pal, Amlan J.

    2012-08-01

    We have introduced an organic/inorganic hybrid pn-junction for solar cell applications. Layers of II-VI quantum dots and a metal-phthalocyanine in sequence have been used as n- and p-type materials, respectively, to form a junction. The film of quantum dots has been formed through a layer-by-layer process by replacing the long-chain ligands of the nanoparticles in each ultrathin layer or a monolayer with short-chain ones so that interparticle distance becomes small leading to a decrease in resistance of the quantum dot layer. With indium tin oxide and Au as electrodes, we have formed an inverted sandwiched structure. These electrodes formed ohmic contacts with the neighboring materials. From the current-voltage characteristics of the hybrid heterostructure, we have inferred formation of a depletion region at the pn-junction that played a key role in charge separation and correspondingly a photocurrent in the external circuit. For comparison, we have also formed and characterized Schottky devices based on components of the pn-junction keeping the electrode combination same. From capacitance-voltage characteristics, we have observed that the depletion region of the hybrid pn-junction was much wider as compared to that in Schottky devices based on components of the junction.

  8. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOEpatents

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

  9. Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1981-01-01

    The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

  10. Morphology-tunable assembly of periodically aligned Si nanowire and radial pn junction arrays for solar cell applications

    NASA Astrophysics Data System (ADS)

    Li, Xiaocheng; Liang, Kun; Tay, Beng Kang; Teo, Edwin H. T.

    2012-06-01

    Large-area periodically aligned Si nanowire (PASiNW) arrays have been fabricated on Si substrates via a templated catalytic chemical etching process. The diameter, length, packing density, and even the shape of Si nanowires (SiNWs) could be precisely controlled and tuned. A local coupling redox mechanism involving the reduction of H2O2 on silver particles and the dissolution of Si is responsible for formation of SiNWs. With the as-prepared SiNWs as templates, three kinds of PASiNW radial pn junction structures were fabricated on Si substrates via a solid-state phosphorous diffusion strategy and their applications in solar cells were also explored. The PASiNW radial pn junction-based solar cell with big diameter and interspace shows the highest power conversion efficiency (PCE) of 4.10% among the three kinds of devices. Further optimization, including surface passivation and electrode contact, is still needed for the higher efficiency PASiNW radial pn junction-based solar cells in the future.

  11. Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

    NASA Technical Reports Server (NTRS)

    Vonroos, O. H. (Inventor)

    1978-01-01

    Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output.

  12. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

    SciTech Connect

    Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

    2011-01-01

    We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

  13. High-field domains in CdS adjacent to a junction of p-type solar cells

    NASA Astrophysics Data System (ADS)

    Böer, Karl W.

    2016-02-01

    A thin cover layer (150 Å preferred) of copper-doped CdS, when applied on top of any p-type solar cell, can connect this cell directly to an electron-blocking electrode without a pn-junction and increases the open circuit voltage close to its theoretical value; in the example of a CdS/CdTe cell, it increases Voc to its extrapolated value at T = 0 K of the band gap of 1.45 eV. This is caused by a high-field domain that is attached to the junction and limits the field to below tunneling to prevent junction leakage and connects to the CdS that has turned p-type. The large Debye length exceeding the thickness of the CdS forces a direct connection to the electron-blocking cathode with holes tunneling into the metal. The difference of junction-attached high-field domains to the electrode-attached domains, which were described earlier, are given and the consequences are delineated by increasing the conversion efficiency from 8% to 16% in CdTe, while also causing some series resistance limitation. The effect of the added CdS layer is discussed by drawing a to-scale model of the CdS/CdTe solar cell from all experimentally available data and the assumption of the continuity of the hole current. A small jump of the valence band downward is caused by interface recombination. The assistance of high-field domains in CdS is also exemplified by the results of an extremely simple production procedure of the CdS/Cu2S solar cells.

  14. Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

    NASA Astrophysics Data System (ADS)

    Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

    2015-05-01

    We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

  15. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  16. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  17. Development of a 30 percent efficient 3-junction monolithic cascade solar cell

    NASA Technical Reports Server (NTRS)

    Lewis, C. R.; Dietze, W. T.; Ludowise, M. J.

    1984-01-01

    The individual subcells of the 3-junction monolithic cascade concentrator cell are grown lattice mismatched with respect to each other, if appropriate grading layers are inserted between the mismatched layers. Under these conditions, negligible degradation of the properties of either underlying or overlying material results, and high-efficiency subcells are produced by this technique.

  18. Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells.

    PubMed

    Jiao, Tianpeng; Liu, Jian; Wei, Dapeng; Feng, Yanhui; Song, Xuefen; Shi, Haofei; Jia, Shuming; Sun, Wentao; Du, Chunlei

    2015-09-16

    The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells. PMID:26308388

  19. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    NASA Technical Reports Server (NTRS)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  20. Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Sah, C. T.

    1977-01-01

    The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.

  1. In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

    NASA Technical Reports Server (NTRS)

    Harris, R.D.; Imaizumi, M.; Walters, R.J.; Lorentzen, J.R.; Messenger, S.R.; Tischler, J.G.; Ohshima, T.; Sato, S.; Sharps, P.R.; Fatemi, N.S.

    2008-01-01

    The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

  2. Quadruple-junction thin-film silicon-based solar cells with high open-circuit voltage

    NASA Astrophysics Data System (ADS)

    Si, Fai Tong; Kim, Do Yun; Santbergen, Rudi; Tan, Hairen; van Swaaij, René A. C. M. M.; Smets, Arno H. M.; Isabella, Olindo; Zeman, Miro

    2014-08-01

    We have fabricated a-SiOx:H/a-Si:H/nc-Si:H/nc-Si:H quadruple-junction thin-film silicon-based solar cells (4J TFSSCs) to obtain high spectral utilization and high voltages. By processing the solar cells on micro-textured superstrates, extremely high open-circuit voltages for photovoltaic technology based on thin-film silicon alloys up to 2.91 V have been achieved. Optical simulations of quadruple-junction solar cells using an advanced in-house model are a crucial tool to effectively tackle the challenging task of current matching among the individual sub-cells in such devices. After optimizing the optical design of the device and the absorber thicknesses, an energy conversion efficiency of 11.4% has been achieved. The open-circuit voltage, short-circuit current density, and fill factor were 2.82 V, 5.49 mA/cm2, and 73.9%, respectively. Based on this demonstration, strategies for further development of highly efficient 4J TFSSCs are proposed.

  3. Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

    NASA Technical Reports Server (NTRS)

    Luke, K. L.; Cheng, L.-J.

    1986-01-01

    Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

  4. Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

    2002-01-01

    Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

  5. Optimization of 3-junction inverted metamorphic solar cells for high-temperature and high-concentration operation

    NASA Astrophysics Data System (ADS)

    Geisz, John F.; Duda, Anna; France, Ryan M.; Friedman, Daniel J.; Garcia, Ivan; Olavarria, Waldo; Olson, Jerry M.; Steiner, Myles A.; Ward, J. Scott; Young, Michelle

    2012-10-01

    Four different band gap combinations of triple-junction inverted metamorphic solar cells are characterized as a function of temperature and concentration up to 120°C and ˜1000 suns. We demonstrate that the standard 1.82/1.40/1.00 eV combination is an excellent choice for typical operating conditions of 1000 suns and 75°C. Improved metal grids and thermal management in such a cell has achieved 42.6% efficiency at 327 suns and 40.9% at 1093 suns at 25°C.

  6. Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

    NASA Astrophysics Data System (ADS)

    Thomas, T.; Mellor, A.; Hylton, N. P.; Führer, M.; Alonso-Álvarez, D.; Braun, A.; Ekins-Daukes, N. J.; David, J. P. R.; Sweeney, S. J.

    2015-09-01

    Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps (typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be improved by introducing a 1 eV absorber into the stack, either replacing Ge in a triple-junction configuration or on top of Ge in a quad-junction configuration. GaAs0.94Bi0.06 yields a direct-gap at 1 eV with only 0.7% strain on GaAs and the feasibility of the material has been demonstrated from GaAsBi photodetector devices. The relatively high absorption coefficient of GaAsBi suggests sufficient current can be generated to match the sub-cell photocurrent from the other sub-cells of a standard multi-junction solar cell. However, minority carrier transport and background doping levels place constraints on both p/n and p-i-n diode configurations. In the possible case of short minority carrier diffusion lengths we recommend the use of a p-i-n diode, and predict the material parameters that are necessary to achieve high efficiencies in a GaInP/GaAs/GaAsBi/Ge quad-junction cell.

  7. Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

    NASA Technical Reports Server (NTRS)

    Lindholm, Fredrik A.; Liou, Juin J.; Neugroschel, Arnost; Jung, Taewon W.

    1987-01-01

    The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

  8. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-01

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells. PMID:24452695

  9. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  10. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

    SciTech Connect

    Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

    2011-07-01

    Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

  11. The Angular Performance Behavior Of Triple Junction Solar Cells With Different Antireflection Coatings For High Temperature Space Missions

    NASA Astrophysics Data System (ADS)

    Hulsheger, Tim; Brandt, Christian; Caon, Antonio; Fiebrich, Horst K.; Andreev, Thomas

    2011-10-01

    The angular behavior of GaInP2/GaAs/Ge triple junction solar cells is studied from 0° up to 86°. Angle dependent short circuit currents of cells with antireflection coatings such as TiO2/Al2O3 and Al2O3 are compared to results of uncoated cells. Performance benefits from each coating are measured before and after cover glass coverage. Related temperature effects are predicted taking into account measured absorption coefficients in order to address on the coating of choice for high temperature solar generators. The influence of the sun light intensities from 1 AM0 to 8 AM0 is put in relation with basic semiconductor properties.

  12. Effects of junction formation conditions on the photovoltaic properties of sintered CdS/CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Lee, J. S.; Im, H. B.

    1986-03-01

    The microstructure and electrical properties of sintered CdS/CdTe heterojunction solar cells were examined experimentally. Borosilicate glass substrates were coated with a slurry of calcined CdS, and the combination was sintered at 650 C for an hour. The resulting films were coated with a CdTe slurry to a thickness of 25 microns and the combinations were sintered at temperatures ranging from 585-700 C. The CdS films had grain sizes averaging 15 microns while the CdTe grains averaged just over 5 microns. The sintering process produced p-n junctions. A maximum solar cell efficiency of 7.18 percent was obtained when the final sintering was 625 C for 1 hr. Effective cells were only obtained when the sintering temperature was between 610-625 C.

  13. Simulation and optimization of current and lattice matching double-junction GaNAsP/Si solar cells

    NASA Astrophysics Data System (ADS)

    Nacer, S.; Aissat, A.

    2016-01-01

    This paper deals with theoretical investigation of the performance of current and lattice matched GaNxAsyP1-x-y/Si double-junction solar cells. The nitrogen and arsenic concentrations ensuring lattice matching to Si are determined. The band gap of GaNAsP is calculated using the band anti-crossing model. Calculations were performed under 1-sun AM1.5 using the one diode ideal model. Impact of minor carrier lifetime and surface recombination in the top sub-cell on the cell performances is analyzed. Optimum compositions of the top sub-cell have been identified (x = 4.5%, y = 11.5% and Eg = 1.68 eV). The simulation results predict, for the optimized GaNAsP/Si double-junction solar cell, a short circuit current Jsc = 20 mA/cm2, an open circuit voltage Voc = 1.95 V, and a conversion efficiency η = 37.5%.

  14. A silicon-wafer based p-n junction solar cell by aluminum-induced recrystallization and doping

    NASA Astrophysics Data System (ADS)

    Gardelis, S.; Nassiopoulou, A. G.; Manousiadis, P.; Vouroutzis, Î..; Frangis, N.

    2013-12-01

    We fabricated a silicon-wafer based p-n junction solar cell with conversion efficiency of 11% without conventional doping of the emitter or the use of anti-reflecting coatings. The emitter was originally nanocrystalline, grown on n-type crystalline Si and covered with a thin semi-transparent Al layer. Annealing in nitrogen at 430 °C promoted a simultaneous aluminum (Al)-induced recrystallization and Al-doping of the emitter. The recrystallized emitter consisted of considerably larger Si grains which were epitaxially crystallized on the Si substrate. These two effects led to a considerable improvement of the electrical and photovoltaic properties of the resulting p-n junction.

  15. Basic concepts for the design of high-efficiency single-junction and multibandgap solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1985-01-01

    Concepts for obtaining practical solar-cell modules with one-sun efficiencies up to 30 percent at air mass 1 are now well understood. Such high-efficiency modules utilize multibandgap structures. To achieve module efficiencies significantly above 30 percent, it is necessary to employ different concepts such as spectral compression and broad-band detection. A detailed description of concepts for the design of high-efficiency multibandgap solar cells is given.

  16. Nanostructured p-type CZTS thin films prepared by a facile solution process for 3D p-n junction solar cells

    NASA Astrophysics Data System (ADS)

    Park, Si-Nae; Sung, Shi-Joon; Sim, Jun-Hyoung; Yang, Kee-Jeong; Hwang, Dae-Kue; Kim, Junho; Kim, Gee Yeong; Jo, William; Kim, Dae-Hwan; Kang, Jin-Kyu

    2015-06-01

    Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the nanoporous CZTS thin films by chemical bath deposition. The photovoltaic properties of 3D p-n junction CZTS solar cells are predominantly affected by the scale of CZTS nanograins, which is easily controlled by the sulfurization temperature of CZTS precursor films. The scale of CZTS nanograins determines the minority carrier transportation within the 3D p-n junction between CZTS and CdS, which are closely related with the photocurrent of series resistance of 3D p-n junction solar cells. 3D p-n junction CZTS solar cells with nanograins below 100 nm show power conversion efficiency of 5.02%, which is comparable with conventional CZTS thin film solar cells.Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the

  17. Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography.

    PubMed

    Hernández-Saz, J; Herrera, M; Delgado, F J; Duguay, S; Philippe, T; Gonzalez, M; Abell, J; Walters, R J; Molina, S I

    2016-07-29

    The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs. PMID:27306098

  18. Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

    NASA Astrophysics Data System (ADS)

    Hernández-Saz, J.; Herrera, M.; Delgado, F. J.; Duguay, S.; Philippe, T.; Gonzalez, M.; Abell, J.; Walters, R. J.; Molina, S. I.

    2016-07-01

    The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.

  19. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    SciTech Connect

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.

  20. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    NASA Astrophysics Data System (ADS)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Landini, Barbara; Campman, Ken; Zhang, Yong-Hang

    2014-05-01

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al0.52In0.48P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF2/ZnS anti-reflective coating demonstrated open-circuit voltages (Voc) up to 1.00 V, short-circuit current densities (Jsc) up to 24.5 mA/cm2, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated Jsc and conversion efficiency of these devices are expected to reach 26.6 mA/cm2 and 20.7%, respectively.

  1. A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Sah, C.-T.; Godlewski, M. P.; Brandhorst, H. W., Jr.

    1977-01-01

    An experimentally based methodology that determines the effective gap shrinkage and lifetime in the emitter of a p-n junction solar cell is described which provides an experimental means for assessing the importance of gap shrinkage relative to that of large recombination rates in the highly doped emitter. The base lifetime is also determined. The methodology pertains to a solar cell after the junction is formed, so that each material parameter determined includes the effects of the processing used in junction fabrication. The methodology consists of strategy and procedures for designing experiments and interpreting data consistently with the physical mechanisms governing device behavior. This careful linking to the device physics uncover the material parameters concealed in the data. To illustrate the procedures, they are applied to an n(+)-p solar cell having substrate resistivity of about 0.1 ohm-cm.

  2. Contorted hexabenzocoronene derivatives enable fullerene-free, semi-transparent solar cells with record-breaking single-junction photovoltage

    NASA Astrophysics Data System (ADS)

    Davy, Nicholas; Sezen, Melda; Loo, Yueh-Lin

    Recent work on tuning the chemical structure of contorted hexabenzocoronene (cHBC) in our group has yielded derivatives with a spectrum of energy levels and absorption profiles, greatly improving the utility of these materials as donor and/or acceptor constituents in organic solar cells. Here, we report planar-heterojunction solar cells comprising an extended heterocyclic cHBC donor and a halogenated cHBC acceptor. By harvesting primarily near-UV light, these devices exhibit a record open-circuit voltage of 1.5 V; this value is higher than any previously reported value for a single-junction organic solar cell. Our active layers are molecularly smooth and pinhole-free; these devices should be scalable to large areas without incurring substantial loss to performance. With a transmittance of 79% across the visible, our devices can be vertically integrated to directly drive the switching of electrochromic windows, where existing prototypes depend on tandem solar cells having near-infrared absorbers.

  3. Development of high stable-efficiency, triple-junction a-Si alloy solar cells. Annual subcontract report, July 18, 1994--July 17, 1995

    SciTech Connect

    Deng, X.

    1996-02-01

    This report describes work performed by Energy Conversion Devices, Inc. (ECD) under a 3-year, cost-shared amorphous silicon (a-Si) research program to develop advanced technologies and to demonstrate stable 14%-efficient, triple-junction a-Si alloy solar cells. The technologies developed under the program will then be incorporated into ECD`s continuous roll-to-roll deposition process to further enhance ECD`s photovoltaic manufacturing technology. In ECD`s solar cell design, triple-junction a-Si alloy solar cells are deposited onto stainless-steel substrates coated with Ag/ZnO back-reflector layers. This type of cell design enabled ECD to use a continuous roll- to-roll deposition process to manufacture a-Si PV materials in high volume at low cost. Using this cell design, ECD previously achieved 13.7% initial solar cell efficiency using the following features: (1) a triple-junction, two-band-gap, spectrum-splitting solar cell design; (2) a microcrystalline silicon p-layer; (3) a band-gap-profiled a- SiGe alloy as the bottom cell i-layer; (4) a high-performance AgZnO back-reflector; and (5) a high-performance tunnel junction between component cells. ECD also applied the technology into its 2-MW/yr a- Si production line and achieved the manufacturing of 4-ft{sup 2} PV modules with 8% stable efficiency. During this program, ECD is also further advancing its existing PV technology toward the goal of 14% stable solar cells by performing the following four tasks: (1) improving the stability of the intrinsic a-Si alloy materials; (2) improving the quality of low-band-gap a-SiGe alloy; (3) improving p{sup +} window layers, and (4) developing high stable-efficiency triple-junction a-Si alloy solar cells.

  4. Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

    SciTech Connect

    Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

    2012-04-15

    We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

  5. Effect of wavelength on the electrical parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain

    NASA Astrophysics Data System (ADS)

    Sahin, Gökhan

    The influence of the illumination wavelength on the electrical parameters of a vertical parallel junction silicon solar cell by its rear side is theoretically analyzed. Based on the excess minority carrier's density, the photocurrent density and photovoltage across the junction were determined. From both photocurrent and the photovoltage, the series and shunt resistance expressions are deduced and the solar cell associated capacitance and conversion efficiency are calculated. The aim of this study is to show the influence of the illumination wavelength on the electrical parameters of the cell and the behavior of both parasitic resistances and capacitance versus operating point.

  6. The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Fossum, J. G.; Lindholm, F. A.; Shibib, M. A.

    1979-01-01

    Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

  7. Porous Silicon Modified Photovoltaic Junctions: An Approach to High-Efficiency Solar Cells

    NASA Astrophysics Data System (ADS)

    Badawy, Waheed A.

    2007-02-01

    The solution of the energy problems of our universe is based on the use of the ultimate source of energy, THE SUN, as the main source of useable energy. The trials to obtain solar cells of appropriate efficiency and suitable price represent one of the main tasks of different research groups over the whole world. In this respect silicon represent the main absorber of sun light that could be converted to electricity, photovoltaic cells, or to high energy chemical products, photoelectrochemical cells. Photovoltaic and photoelectrochemical systems were prepared by the formation of a thin porous film on silicon. The porous silicon layer was formed on the top of a clean oxide free silicon wafer surface by anodic etching in HF/H2O/C2H5OH mixture (2:1:1). The silicon was then covered by an oxide film (tin oxide, ITO or titanium oxide. The oxide films were prepared by the spray/pyrolysis technique which enables the incorporation of foreign atoms like In, Ru or Sb in the oxide film matrix during the spray process/. The incorporation of foreign atoms improves the surface characteristics of the oxide film which leads to the improvement of the fill factor and higher solar conversion efficiency. The prepared solar cells are stable against environmental attack due to the presence of the stable oxide film. It gives relatively high short circuit currents (Isc) compared to our improved silicon single crystal solar cells /6/, due to the presence of the porous silicon layer, which leads to the recorded high conversion efficiency. Although the open-circuit potential (Voc) and fill factor (FF) were not affected by the thickness of the porous silicon film, the short circuit current was found to be sensitive to this thickness. An optimum thickness of the porous film and also the oxide layer is required to optimize the solar cell efficiency. The results represent a promising system for the application of porous silicon layers in solar energy converters. The use of porous silicon instead of

  8. AC solar cell

    SciTech Connect

    Schutten, H.P.; Benjamin, J.A.; Lade, R.W.

    1986-03-18

    An AC solar cell is described comprising: a pair of PN junction type solar cells connected in antiparallel between a pair of main terminals; and means for electrically directing light alternatingly without mechanical movement on the PN junctions to generate an alternating potential across the main terminals.

  9. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    SciTech Connect

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Yu, Linwei E-mail: linwei.yu@polytechnique.edu

    2015-10-19

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  10. Ga/sub 0. 80/In/sub 0. 20/As 1. 20-eV high quantum efficiency junction for multijunction solar cells

    SciTech Connect

    Dietze, W.T.; Ludowise, M.J.; Gregory, P.E.

    1982-11-15

    A Ga/sub 0.80/In/sub 0.20/As junction for solar cell applications grown on GaAs by organometallic vapor phase epitaxy (OMVPE) with a peak collection quantum efficiency of 92% is reported. This junction is fabricated using step-graded layers to reduce misfit dislocations between the junction and the substrate. The effects of step grading on the projected short circuit current density, peak quantum efficiency, and diode ideality factor have been measured. With grading, the ideality factor is reduced from n = 2.7 to 1.2 for current densities greater than 0.01 A/cm/sup 2/. This high-performance Ga/sub 0.80/In/sub 0.20/As can serve as an excellent low-gap junction for multijunction solar cells.

  11. Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Final technical report

    SciTech Connect

    Deng, X.; Jones, S.J.; Liu, T.; Izu, M.

    1998-04-01

    This report summarizes Energy Conversion Devices, Inc.`s (ECD) research under this program. ECD researchers explored the deposition of a-Si at high rates using very-high-frequency plasma MHz, and compared these VHF i-layers with radio-frequency (RF) plasma-deposited i-layers. ECD conducted comprehensive research to develop a {mu}c-Si p{sup +} layer using VHF deposition process with the objectives of establishing a wider process window for the deposition of high-quality p{sup +} materials and further enhancing their performance of a-Si solar cells by improving its p-layers. ECD optimized the deposition of the intrinsic a-Si layer and the boron-doped {mu}c-Si p{sup +} layer to improve the V{sub oc}. Researchers deposited wide-bandgap a-Si films using high hydrogen dilution; investigated the deposition of the ZnO layer (for use in back-reflector) using a sputter deposition process involving metal Zn targets; and obtained a baseline fabrication for single-junction a-Si n-i-p devices with 10.6% initial efficiency and a baseline fabrication for triple-junction a-Si devices with 11.2% initial efficiency. ECD researchers also optimized the deposition parameters for a-SiGe with high Ge content; designed a novel structure for the p-n tunnel junction (recombination layer) in a multiple-junction solar cell; and demonstrated, in n-i-p solar cells, the improved stability of a-Si:H:F materials when deposited using a new fluorine precursor. Researchers investigated the use of c-Si(n{sup +})/a-Si alloy/Pd Schottky barrier device as a tool for the effective evaluation of photovoltaic performance on a-Si alloy materials. Through alterations in the deposition conditions and system hardware, researchers improved their understanding for the deposition of uniform and high-quality a-Si and a-SiGe films over large areas. ECD researchers also performed extensive research to optimize the deposition process of the newly constructed 5-MW back-reflector deposition machine.

  12. An integrated approach to realizing high-performance liquid-junction quantum dot sensitized solar cells

    PubMed Central

    McDaniel, Hunter; Fuke, Nobuhiro; Makarov, Nikolay S.; Pietryga, Jeffrey M.; Klimov, Victor I.

    2013-01-01

    Solution-processed semiconductor quantum dot solar cells offer a path towards both reduced fabrication cost and higher efficiency enabled by novel processes such as hot-electron extraction and carrier multiplication. Here we use a new class of low-cost, low-toxicity CuInSexS2−x quantum dots to demonstrate sensitized solar cells with certified efficiencies exceeding 5%. Among other material and device design improvements studied, use of a methanol-based polysulfide electrolyte results in a particularly dramatic enhancement in photocurrent and reduced series resistance. Despite the high vapour pressure of methanol, the solar cells are stable for months under ambient conditions, which is much longer than any previously reported quantum dot sensitized solar cell. This study demonstrates the large potential of CuInSexS2−x quantum dots as active materials for the realization of low-cost, robust and efficient photovoltaics as well as a platform for investigating various advanced concepts derived from the unique physics of the nanoscale size regime. PMID:24322379

  13. p-n junction improvements of Cu2ZnSnS4/CdS monograin layer solar cells

    NASA Astrophysics Data System (ADS)

    Kauk-Kuusik, M.; Timmo, K.; Danilson, M.; Altosaar, M.; Grossberg, M.; Ernits, K.

    2015-12-01

    In this work we studied the influence of oxidative etching of CZTS monograin surface to the performance of CZTS monograin layer solar cells. The chemistry of CZTS monograin powder surfaces submitted to bromine in methanol and KCN aqueous solutions was investigated by X-ray photoelectron spectroscopy. After bromine etching, elemental sulfur, Sn-O and/or Sn-Br species are formed on the CZTS crystal surface. Sulfur is completely removed by subsequent KCN etching, but oxides and bromides remained on the surface until CdS deposition. These species dissolve in alkaline solution and influence properties of CdS. The conversion efficiency of solar cells improved after the chemical etching prior to CdS deposition and the effect can be attributed to the change of the absorber material crystals surface composition and properties suitable for the effective p-n junction formation. The best CZTS monograin layer solar cell showed conversation efficiency of 7.04% (active area 9.38%).

  14. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Semiannual subcontract progress report, 1 December 1984-31 May 1985

    SciTech Connect

    Ashton, G.R.; Aspen, F.E.; Jacobson, R.L.; Jeffrey, F.R.; Tran, N.T.

    1986-01-01

    This report presents interim results of research in high-efficiency, single-junction, monolithic thin-film amorphous silicon solar cells, which consists of five research tasks: (1) amorphous silicon materials research, (2) nonsemiconductor materials research, (3) solar cell research, (4) monolithic, intraconnected cells/submodule research, and (5) multichamber deposition system research. The subcontracted work reported here advances the state of the art in thin-film amorphous silicon solar cell development through work on flexible substrates. A multichamber deposition system for depositing a-Si onto polyimide flexible web is essentially complete.

  15. Reduction of solar cell efficiency by edge defects across the back-surface-field junction - A developed perimeter model

    NASA Technical Reports Server (NTRS)

    Sah, C. T.; Yamakawa, K. A.; Lutwack, R.

    1982-01-01

    Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.

  16. Current-matched, high-efficiency, multi-junction monolithic solar cells

    SciTech Connect

    Olson, J.M.; Kurtz, S.R.

    1991-02-11

    In this invention, the efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga{sub 0.52}In{sub 0.48}P and GaAs. Additional lattice-matched systems to which the invention pertains include Al{sub x}Ga{sub l-x}/GaAs (x=0.3 {minus} 0.4), GaAs/Ge and Ga{sub y}In{sub 1-y}P/Ga{sub y+0.5}In{sub 0.5-{sub Y}} As (O

  17. Operating limits of AL-alloyed high-low junctions for BSF solar cells

    NASA Astrophysics Data System (ADS)

    del Alamo, J.; Eguren, J.; Luque, A.

    1981-05-01

    Experimental estimations of the effective surface recombination velocity of the high-low junction and of the base diffusion length are carried out for Al-alloyed n(plus)pp(plus) bifacial cells and the results are presented in form of histograms. These results agree with calculated values of the effective surface recombination velocity when the characteristics of the recrystallized Si layer and heavy doping effects are taken into account. It is concluded that thick Al layers and high alloying temperatures (over 800 C) are necessary to obtain low values of the velocity. This conclusion agrees with experimental results of other authors. Recommendations to avoid diffusion length degradation are given and the operating limits of the Al alloying technology are discussed.

  18. Quadruple-junction solar cells and modules based on amorphous and microcrystalline silicon with high stable efficiencies

    NASA Astrophysics Data System (ADS)

    Kirner, Simon; Neubert, Sebastian; Schultz, Christof; Gabriel, Onno; Stannowski, Bernd; Rech, Bernd; Schlatmann, Rutger

    2015-08-01

    Quadruple junction solar cells and modules are presented, which consist of hydrogenated amorphous (a-Si:H) and microcrystalline silicon (µc-Si:H) in the a-Si:H/a-Si:H/µc-Si:H/µc-Si:H configuration. The highest measured conversion efficiency of a mini-module with an aperture area of 61.44 cm2 was 13.4% before and 12.0% after more than 1000 h of light soaking, respectively. In this paper, we discuss the advantages of the quadruple junction design over the common tandem design, which is ascribed mainly to the fact that the total absorber thickness can be increased while electronic properties and stability are maintained or even improved. The role of the µc-SiOx:H intermediate reflector is highlighted and an optimization of the doping concentration in this layer is presented. Furthermore, the advantage of the high maximum power voltage for the monolithic cell interconnection laser design of modules is shown.

  19. Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

    NASA Astrophysics Data System (ADS)

    Wenbo, Xiao; Xingdao, He; Yiqing, Gao; Zhimin, Zhang; Jiangtao, Liu

    2012-06-01

    The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions. An electroluminescence viewgraph shows the clear device structures, and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current. The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells. The good fit between the measured and calculated data proves the above conclusions. This work is of guiding significance for current solar cell testing and research.

  20. Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions

    SciTech Connect

    Andreev, V. M.; Evstropov, V. V.; Kalinovsky, V. S. Lantratov, V. M.; Khvostikov, V. P.

    2009-05-15

    Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceless J-V{sub j} characteristic (with the series resistance disregarded) of a multijunction solar cell has the same shape as the characteristic of a single-junction cell: both feature a set of exponential portions. This made it possible to develop a unified analytical method for calculating the efficiency of singlejunction and multijunction solar cells. The equation relating the efficiency to the photogenerated current at each portion of the J-V{sub j} characteristic is derived. For p-n junctions in GaAs and GaSb, the following characteristics were measured: the dark J-V characteristic, the dependence of the open-circuit voltage on the illumination intensity P-V{sub OC}, and the dependence of the luminescence intensity on the forward current L-J. Calculated dependences of potential efficiency (under idealized condition for equality to unity of external quantum yield) on the photogenerated current for single-junction GaAs and GaSb solar cells and a GaAs/GaSb tandem are plotted. The form of these dependences corresponds to the shape of J-V{sub j} characteristics: there are the diffusion- and recombination-related portions; in some cases, the tunneling-trapping portion is also observed. At low degrees of concentration of solar radiation (C < 10), an appreciable contribution to photogenerated current is made by recombination component. It is an increase in this component in the case of irradiation with 6.78-MeV protons or 1-MeV electrons that brings about a decrease in the efficiency of conversion of unconcentrated solar radiation.

  1. Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

    NASA Astrophysics Data System (ADS)

    Abolmasov, Sergey; Cabarrocas, Pere Roca i.; Chatterjee, Parsathi

    2016-01-01

    We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD) technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μc-SiOx:H layers, as well as a MgF2 anti-reflection coating (ARC) on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P- and N-doped μc-SiOx:H layers and a MgF2 ARC.

  2. A high efficiency bulk graded band gap/PN junction solar cell structure at high concentration ratios

    SciTech Connect

    Borrego, J.M.; Gandhi, S.K.; Page, D.A.

    1984-05-01

    This paper presents an analysis of a solar cell structure for achieving high efficiency at high concentration ratios. The structure consists of a bulk graded band gap P region followed by a PN junction at the smaller band gap side. The advantage of this structure is that the open circuit voltage is determined by the value of the higher band gap and the short circuit current by the lower band gap. A structure with E /SUB G1/ = 2.0 eV and E /SUB G2/ = 0.7 eV has an estimated efficiency of 45% at 1000 suns. Material systems which can be used for the realization of this structure are briefly described.

  3. Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells

    NASA Astrophysics Data System (ADS)

    Hara, Kosuke O.; Usami, Noritaka

    2013-10-01

    We have derived the formula to calculate the open-circuit voltage in a pn-junction solar cell from carrier densities by considering the driving force of charge separation without using the equation for current. The excess amount of chemical potential of charge carriers is proposed as the origin of the driving force of charge separation, and the voltage formula is derived from the gradient of excess chemical potential. The calculated voltage is shown to agree with the result of a rigorous device simulation for symmetrical pn-homojunction devices with band gaps of 0.6-1.8 eV and majority-carrier densities of 1015-1019 cm-3. The developed formula is, therefore, valid for the pn-homojunction devices, indicating that the driving force of charge separation stems from the excess chemical potential.

  4. Photovoltaic performance of thin-film CdS-Cu2S solar cells with electroformed junctions

    NASA Astrophysics Data System (ADS)

    Rastogi, A. C.

    1985-06-01

    Irreproducibility and low conversion efficiency of CdS-Cu2S solar cells fabricated by the chemiplating process are found to be the result of variations in the surface morphology of the textured CdS surface. To counter such problems, a new technique of barrier formation using direct-current (DC) field-assisted control over the reacting ionic species is described. Photovoltaic data on solar cells fabricated in this way display an overall improvement owing to the prevention of deep-intruded Cu(2-x)S growth along the CdS grain boundaries and a closer approximation to stoichiometry. In addition, with the use of the DC potential as a first-order variable these improved characteristics of the junctions have been found to be less sensitive to the Cu(2-x)S deposition variables, thus improving general reproducibility. Data on the cells made by the new technique obtained from spectral response, sheet resistivity, and accelerated life tests are presented.

  5. Cu2ZnSnS4 (CZTS) nanoparticle based nontoxic and earth-abundant hybrid pn-junction solar cells.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2012-06-14

    A heterojunction between a layer of CZTS nanoparticles and a layer of fullerene derivatives forms a pn-junction. We have used such an inorganic-organic hybrid pn-junction device for solar cell applications. As routes to optimize device performance, interdot separation has been reduced by replacing long-chain ligands of the quantum dots with short-chain ligands and thickness of the CZTS layer has been varied. We have shown that the CZTS-fullerene interface could dissociate photogenerated excitons due to the depletion region formed at the pn-junction. From capacitance-voltage characteristics, we have determined the width of the depletion region, and compared it with the parameters of devices based on the components of the heterojunction. The results demonstrate solar cell applications based on nontoxic and earth-abundant materials. PMID:22539133

  6. Finite mobility effects on the radiative efficiency limit of pn -junction solar cells

    NASA Astrophysics Data System (ADS)

    Mattheis, Julian; Werner, Jürgen H.; Rau, Uwe

    2008-02-01

    The maximum power conversion efficiency of a solar cell as defined by the Shockley-Queisser (SQ) radiative recombination limit relies on the assumption that the collection probability for all photogenerated electron/hole pairs is unity. This assumption implies a virtually infinite mobility μn of the photogenerated charge carriers. In order to compute the radiative efficiency limit with finite mobilities, we solve the continuity equation for minority carrier transport including an additional photon recycling term that accounts for emission of photons by radiative recombination and their subsequent reabsorption. This approach quantitatively connects the SQ approach with the classical diode theory. Even when assuming radiative recombination as the only loss mechanism, the maximum efficiency achievable within our model is reduced drastically when μn drops below a critical value. This critical value depends on the absorption coefficient, the doping density of the absorber material, as well as on the thickness and the light trapping scheme of the solar cell. Thus, these material and device parameters gain a fundamental importance as soon as finite carrier mobility is considered. Our theory yields a criterion that has to be fulfilled by any photovoltaic material in order to guarantee charge separation even in an otherwise most ideal case. Exemplary application of our model to three real photovoltaic materials, crystalline silicon (c-Si) , amorphous silicon (a-Si:H) , as well as Cu(In,Ga)Se2 (CIGS), shows that mobilities of c-Si and CIGS are three, respectively, 1 order of magnitude above this critical limit whereas the effective hole mobilities in a-Si:H are scattered around the critical value. A comparison between solar cells and light-emitting diodes with finite mobility and finite nonradiative lifetime reveals that materials for these complementary devices have to fulfill different requirements.

  7. Development of 1.25 eV InGaAsN for triple junction solar cells

    SciTech Connect

    LI,N.Y.; SHARPS,P.R.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.

  8. Forward-bias capacitance and current measurements for determining lifetimes and band narrowing in p-n junction solar cells

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Chen, P. J.; Pao, S. C.; Lindholm, F. A.

    1978-01-01

    A new method is described and illustrated for determining the minority-carrier diffusion length and lifetime in the base region of p-n junction solar cells. The method requires only capacitance measurements at the device terminals and its accuracy is estimated to be + or - 5%. It is applied to a set of silicon p-n junction devices and the values of the diffusion lengths agree with those obtained using the current response to X-ray excitation but disagree with those obtained by the OCVD method. The reasons for the relative inaccuracy of OCVD applied to silicon devices are discussed. The capacitance method includes corrections for a two-dimensional fringing effects which occur in small area devices. For a device having highly-doped base region and surface (emitter) layer, the method can be extended to enable the determination of material properties of the degenerately doped surface layer. These material properties include the phenomenological emitter lifetime and a measure of the energy band-gap narrowing in the emitter. An alternate method for determining the energy band-gap narrowing from temperature dependence of emitter current is discussed and demonstrated.

  9. Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells.

    PubMed

    Lee, Ya-Ju; Yao, Yung-Chi; Yang, Chia-Hao

    2013-01-14

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07 x 10⁻³Ω-cm underwent RTA treatment of T = 450°C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7 x 10²⁰ cm⁻³ and 15.8 cm²/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5 G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56 V, and a short circuit current of JSC = 1.54 mA/cm² with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%. PMID:23389277

  10. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

    SciTech Connect

    Khatri, I.; Tang, Z.; Hiate, T.; Liu, Q.; Ishikawa, R.; Ueno, K.; Shirai, H.

    2013-12-21

    We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 12–15 wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15 wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2–3 nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.