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Sample records for junction transistors

  1. Ion bipolar junction transistors.

    PubMed

    Tybrandt, Klas; Larsson, Karin C; Richter-Dahlfors, Agneta; Berggren, Magnus

    2010-06-01

    Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective membranes. The IBJT is the ionic analogue to the conventional semiconductor BJT and is manufactured using standard microfabrication techniques. Transistor characteristics along with a model describing the principle of operation, in which an anionic base current amplifies a cationic collector current, are presented. By employing the IBJT as a bioelectronic circuit element for delivery of the neurotransmitter acetylcholine, its efficacy in modulating neuronal cell signaling is demonstrated. PMID:20479274

  2. Ion bipolar junction transistors

    PubMed Central

    Tybrandt, Klas; Larsson, Karin C.; Richter-Dahlfors, Agneta; Berggren, Magnus

    2010-01-01

    Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective membranes. The IBJT is the ionic analogue to the conventional semiconductor BJT and is manufactured using standard microfabrication techniques. Transistor characteristics along with a model describing the principle of operation, in which an anionic base current amplifies a cationic collector current, are presented. By employing the IBJT as a bioelectronic circuit element for delivery of the neurotransmitter acetylcholine, its efficacy in modulating neuronal cell signaling is demonstrated. PMID:20479274

  3. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

    1995-01-01

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

  4. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

    1995-12-26

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

  5. Magnetoamplification in a Bipolar Magnetic Junction Transistor

    NASA Astrophysics Data System (ADS)

    Rangaraju, N.; Peters, J. A.; Wessels, B. W.

    2010-09-01

    We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally observed transistor characteristics, we propose a modified Ebers-Moll model that includes a series magnetoresistance attributed to spin-selective conduction. The capability of magnetic field control of the amplification in an all-semiconductor transistor at room temperature potentially enables the creation of new computer logic architecture where the spin of the carriers is utilized.

  6. Polyphosphonium-based ion bipolar junction transistors

    PubMed Central

    Gabrielsson, Erik O.; Berggren, Magnus

    2014-01-01

    Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that can modulate currents of ions and biomolecules, i.e., ionic transistors and diodes, are needed. One successful approach for modulation of ionic currents is to use oppositely charged ion-selective membranes to form so called ion bipolar junction transistors (IBJTs). Unfortunately, overall IBJT device performance has been hindered due to the typical low mobility of ions, large geometries of the ion bipolar junction materials, and the possibility of electric field enhanced (EFE) water dissociation in the junction. Here, we introduce a novel polyphosphonium-based anion-selective material into npn-type IBJTs. The new material does not show EFE water dissociation and therefore allows for a reduction of junction length down to 2 μm, which significantly improves the switching performance of the ion transistor to 2 s. The presented improvement in speed as well the simplified design will be useful for future development of advanced iontronic circuits employing IBJTs, for example, addressable drug-delivery devices. PMID:25553192

  7. Gallium nitride junction field-effect transistor

    DOEpatents

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  8. Gallium nitride junction field-effect transistor

    DOEpatents

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  9. Free electron gas primary thermometer: The bipolar junction transistor

    SciTech Connect

    Mimila-Arroyo, J.

    2013-11-04

    The temperature of a bipolar transistor is extracted probing its carrier energy distribution through its collector current, obtained under appropriate polarization conditions, following a rigorous mathematical method. The obtained temperature is independent of the transistor physical properties as current gain, structure (Homo-junction or hetero-junction), and geometrical parameters, resulting to be a primary thermometer. This proposition has been tested using off the shelf silicon transistors at thermal equilibrium with water at its triple point, the transistor temperature values obtained involve an uncertainty of a few milli-Kelvin. This proposition has been successfully tested in the temperature range of 77–450 K.

  10. A gallium phosphide high-temperature bipolar junction transistor

    NASA Technical Reports Server (NTRS)

    Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

    1981-01-01

    Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

  11. An improved junction capacitance model for junction field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ding, Hao; Liou, Juin J.; Cirba, Claude R.; Green, Keith

    2006-07-01

    A new junction capacitance model for the four-terminal junction field-effect transistor (JFET) is presented. With a single expression, the model, which is valid for different temperatures and a wide range of bias conditions, describes correctly the JFET junction capacitance behavior and capacitance drop-off phenomenon. The model has been verified using experimental data measured at Texas Instruments.

  12. Vapor grown silicon dioxide improves transistor base-collector junctions

    NASA Technical Reports Server (NTRS)

    Carley, D. R.; Duclos, R. A.

    1966-01-01

    Vapor grown silicon dioxide layer protects base-collector junction in silicon planar transistors during the emitter diffusion process. This oxide fills in any imperfections that exist in the thermally grown oxide layer and is of greater thickness than that layer. This process is used to deposit protective silicon dioxide coatings on optical surfaces.

  13. Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors

    NASA Astrophysics Data System (ADS)

    Benumof, R.; Zoutendyk, J.

    1984-11-01

    This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.

  14. Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors

    NASA Technical Reports Server (NTRS)

    Benumof, R.; Zoutendyk, J.

    1984-01-01

    This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.

  15. Theoretical values of various parameters in the Gummel-Poon model of a bipolar junction transistor

    NASA Technical Reports Server (NTRS)

    Benumof, R.; Zoutendyk, J.

    1986-01-01

    Various parameters in the Gummel-Poon model of a bipolar junction transistor are expressed in terms of the basic structure of a transistor. A consistent theoretical approach is used which facilitates an understanding of the foundations and limitations of the derived formulas. The results enable one to predict how changes in the geometry and composition of a transistor would affect performance.

  16. On noise sources in hot electron-degraded bipolar junction transistors

    NASA Astrophysics Data System (ADS)

    Llinares, P.; Ghibaudo, G.; Chroboczek, J. A.

    1997-09-01

    The effects of electrical stress on static characteristics and power spectral density, SIb, of base current, Ib, fluctuations at low frequencies, f<1 kHz, have been studied in quasiself-aligned bipolar n-p-n junction. In as-fabricated devices SIb∝1/AE, where AE is the transistor emitter area, whereas in strongly degraded transistors Sib∝1/PE, where PE is the transistor perimeter. The latter demonstrates directly that hot carrier-induced noise sources are generated at the periphery of the transistors, in agreement with former work on hot electron-induced aging of bipolar junction transistors.

  17. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  18. Ion-implanted GaN junction field effect transistor

    SciTech Connect

    Zolper, J.C.; Shul, R.J.; Baca, A.G.; Wilson, R.G.; Pearton, S.J.; Stall, R.A.

    1996-04-01

    Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). {ital p}-type and {ital n}-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150{degree}C rapid thermal anneal. A refractory W gate contact was employed that allows the {ital p}-gate region to be self-aligned to the gate contact. A gate turn-on voltage of 1.84 V at 1 mA/mm of gate current was achieved. For a {approximately}1.7 {mu}m{times}50 {mu}m JFET with a {minus}6 V threshold voltage, a maximum transconductance of 7 mS/mm at {ital V}{sub GS}={minus} 2V and saturation current of 33 mA/mm at {ital V}{sub GS}=0 V were measured. These results were limited by excess access resistance and can be expected to be improved with optimized {ital n}{sup +} implants in the source and drain regions. {copyright} {ital 1996 American Institute of Physics.}

  19. Sensitivities of bipolar junction transistor electrical parameters to processing variables

    NASA Astrophysics Data System (ADS)

    Abdulkarim, H. S.

    1980-03-01

    Variations and sensitivities of bipolar junction transistor (BJT) electrical parameters to processing variables were examined. The functional dependence of these sensitivities on the processing schedule employed was estimated. Some design criteria or guidelines that should be followed to reduce the sensitivities of electrical parameters and to minimize yield loss were determined. The BJT parameters considered were electrical parameters of the Ebers-Moll and hybrid-pi models, as well as some device parameters that were useful for the characterization of processing results. The processing variables considered were time and temperature for each of the processing steps of the double diffusion method, physical constants that influence the impurity distribution in silicon, and device dimensions. In evaluating the impurity atom distribution, the diffusion coefficient was assumed to be independent of impurity concentration and the superposition model was assumed for the interaction of the two oppositely charged impurities. In evaluating the electrical parameters, use of a one dimensional model and the modified Moll-Ross relations were assumed to be adequate in relating variations in electrical characteristics to variations in processing variables and physical properties.

  20. Junction-to-Case Thermal Resistance of a Silicon Carbide Bipolar Junction Transistor Measured

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.

    2006-01-01

    Junction temperature of a prototype SiC-based bipolar junction transistor (BJT) was estimated by using the base-emitter voltage (V(sub BE)) characteristic for thermometry. The V(sub BE) was measured as a function of the base current (I(sub B)) at selected temperatures (T), all at a fixed collector current (I(sub C)) and under very low duty cycle pulse conditions. Under such conditions, the average temperature of the chip was taken to be the same as that of the temperature-controlled case. At increased duty cycle such as to substantially heat the chip, but same I(sub C) pulse height, the chip temperature was identified by matching the V(sub BE) to the thermometry curves. From the measured average power, the chip-to-case thermal resistance could be estimated, giving a reasonable value. A tentative explanation for an observed bunching with increasing temperature of the calibration curves may relate to an increasing dopant atom ionization. A first-cut analysis, however, does not support this.

  1. Using Animation to Improve the Students' Academic Achievement on Bipolar Junction Transistor

    ERIC Educational Resources Information Center

    Zoabi, W.; Sabag, N.; Gero, A.

    2012-01-01

    Teaching abstract subjects to students studying towards a degree in electronics practical engineering (a degree between a technician and an engineer) requires didactic tools that enable understanding of issues without using advanced mathematics and physics. One basic issue is the BJT (Bipolar Junction Transistor) that requires preliminary…

  2. Arsenide-antimonide hetero-junction tunnel transistors for low power logic applications

    NASA Astrophysics Data System (ADS)

    Mohata, Dheeraj Kumar

    Aggressive supply voltage (VCC) scaling of future transistors without increasing the off-state leakage while maintaining performance remains an important challenge. Hetero-junction Tunnel FETs (HTFETs) with steep switching slope and high drive current at low supply voltage (below 0.35V) have emerged as promising low VCC device option. GaAs1-ySby source and InxGa1-xAs channel form lattice matched arsenide-antimonide staggered hetero-junctions with compositionally tunable effective tunnel barrier height. Unlike homo-junction Tunnel FETs, the effective barrier height of staggered hetero-junctions can be made negligibly small while maintaining large band-gaps in the respective source, channel and drain regions, thus, enabling TFETs to achieve MOSFET like drive currents while maintaining higher on-off ratio. This dissertation focuses on experimental demonstration of mixed arsenide-antimonide hetero-junction TFETs with nano-pillar tunnel transistor architecture exhibiting MOSFET-like on-current and high on-off ratio for ultra-low power logic applications. Within this dissertation, using experimental demonstration and detailed modeling, following aspects of the n-channel hetero-junction Tunnel FETs will be discussed: a) Material selection and device design; b) Nano-pillar TFET process flow development; c) Hetero-junction TFET growth and materials characterization; and d) Hetero-junction TFET transport study. The dissertation concludes with benchmarking of the performance of arsenide-antimonide n-channel Tunnel FETs with those reported till date, and an address to the feasibility of arsenide-antimonide based complementary Tunnel FET logic for future ultra low power logic applications.

  3. Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains.

    PubMed

    Agnihotri, Pratik; Dhakras, Prathamesh; Lee, Ji Ung

    2016-07-13

    In the development of semiconductor devices, the bipolar junction transistor (BJT) features prominently as being the first solid state transistor that helped to usher in the digital revolution. For any new semiconductor, therefore, the fabrication and characterization of the BJT are important for both technological importance and historical significance. Here, we demonstrate a BJT device in exfoliated TMD semiconductor WSe2. We use buried gates to electrostatically create doped regions with back-to-back p-n junctions. We demonstrate two central characteristics of a bipolar device: current gain when operated as a BJT and a photocurrent gain when operated as a phototransistor. We demonstrate a current gain of 1000 and photocurrent gain of 40 and describe features that enhance these properties due to the doping technique that we employ. PMID:27336742

  4. Complementary GaAs junction-gated heterostructure field effect transistor technology

    SciTech Connect

    Baca, A.G.; Zolper, J.C.; Sherwin, M.E.; Robertson, P.J.; Shul, R.J.; Howard, A.J.; Rieger, D.J.; Klem, J.F.

    1994-09-01

    The first circuit results for a new GaAs complementary logic technology are presented. The technology allows for Independently optimizable p- and n- channel transistors with junction gates. Excellent loaded gate delays of 179 ps at 1.2 V and 319 ps at 0.8 V have been demonstrated at low power supply voltages. A power-delay product of 8.9 fJ was obtained at 0.8 V.

  5. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    PubMed Central

    Hanna, Amir N.; Fahad, Hossain M.; Hussain, Muhammad M.

    2015-01-01

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET. PMID:25923104

  6. Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography

    NASA Technical Reports Server (NTRS)

    Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Rhee, K. W.; Teufel, J.; Schoelkopf, R. J.

    2002-01-01

    This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.

  7. Large-scale transient sensitivity analysis of a radiation damaged bipolar junction transistor.

    SciTech Connect

    Hoekstra, Robert John; Gay, David M.; Bartlett, Roscoe Ainsworth; Phipps, Eric Todd

    2007-11-01

    Automatic differentiation (AD) is useful in transient sensitivity analysis of a computational simulation of a bipolar junction transistor subject to radiation damage. We used forward-mode AD, implemented in a new Trilinos package called Sacado, to compute analytic derivatives for implicit time integration and forward sensitivity analysis. Sacado addresses element-based simulation codes written in C++ and works well with forward sensitivity analysis as implemented in the Trilinos time-integration package Rythmos. The forward sensitivity calculation is significantly more efficient and robust than finite differencing.

  8. A new model for four-terminal junction field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ding, Hao; Liou, Juin J.; Green, Keith; Cirba, Claude R.

    2006-03-01

    This paper presents a compact and semi-empirical model for a four-terminal (independent top and bottom gates) junction field-effect transistor (JFET). The model describes the steady-state characteristics for all bias conditions with a unified equation. Moreover, the model provides a high degree of accuracy and continuity for the different operation regions, a critical factor for robust analog circuit simulations. Capacitance modeling is also included to describe the JFET small-signal behavior. The model has been implemented in Cadence framework via Verilog-A and compared with data measured from JFETs used at Texas Instruments.

  9. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

    SciTech Connect

    Dhungana, Kamal B.; Pati, Ranjit

    2014-04-21

    Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

  10. Focused Laser Induced Spatially Controllable p-n junction in Graphene Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Kim, Young; Bae, Myung-Ho; Shu, Jung-Tak; Kim, Young; Ahn, Joung; Chun, Seung-Hyun; Park, Yun

    2013-03-01

    Tunable local doping on graphene is an important issue for future graphene-based electronics. Here we investigate a local doping effect by a focused laser irradiation and demonstrate a spatially controllable p-n junction in graphene field-effect transistor. Scanning photocurrent microscopy with varying back-gate voltages reveals the local charge trap in gate oxide near the laser-irradiated region. This is manifested by itself as double peaks in resistance as a function of gate voltage in graphene device, where the region between the double peaks corresponds to the p-n junction. Irradiation of a focused laser on graphene device suggests a new pave to spatially control the doping level, position and size of doped segment on graphene channel in a nondestructive way without high electrical bias, local gate electrode and chemical process. Korea Research Institute of Standards and Science

  11. Urea biosensor based on an extended-base bipolar junction transistor.

    PubMed

    Sun, Tai-Ping; Shieh, Hsiu-Li; Liu, Chun-Lin; Chen, Chung-Yuan

    2014-01-01

    In this study, a urea biosensor was prepared by the immobilization of urease onto the sensitive membrane of an extended-base bipolar junction transistor. The pH variation was used to detect the concentration of urea. The SnO2/ITO glass, fabricated by sputtering SnO2 on the conductive ITO glass, was used as a pH-sensitive membrane, which was connected with a commercial bipolar junction transistor device. The gels, fabricated by the poly vinyl alcohol with pendent styrylpyridinium groups, were used to immobilize the urease. This readout circuit, fabricated in a 0.35-um CMOS 2P4M process, operated at 3.3V supply voltage. This circuit occupied an area of 1.0 mm × 0.9 mm. The dynamic range of the urea biosensor was from 1.4 to 64 mg/dl at the 10 mM phosphate buffer solution and the sensitivity of this range was about 65.8 mV/pUrea. The effect of urea biosensors with different pH values was considered, and the characteristics of urea biosensors based on EBBJT were described. PMID:24211878

  12. Gallium nitride junction field effect transistors for high-temperature operation

    SciTech Connect

    Zolper, J.C.; Shul, R.J.; Baca, A.G.; Hietala, V.M.; Pearton, S.J.; Stall, R.A.; Wilson, R.G.

    1996-06-01

    GaN is an attractive material for use in high-temperature or high-power electronic devices due to its high bandgap (3.39 eV), high breakdown field ({approximately}5 {times} 10{sup 6} V/cm), high saturation drift velocity (2.7 {times} 10{sup 7} cm/s), and chemical inertness. To this end, Metal Semiconductor FETs (MESFETs), High Electron Mobility Transistors (HEMTs), Heterostructure FETs (HFETs), and Metal Insulator Semiconductor FETs (MISFETs) have all been reported based on epitaxial AlN/GaN structures (Khan 1993a,b; Binari 1994 and 1995). GaN Junction Field Effect Transistors (JFETs), however, had not been reported until recently (Zolper 1996b). JFETs are attractive for high-temperature operation due to the inherently higher thermal stability of the p/n junction gate of a JFET as compared to the Schottky barrier gate of a MESFET or HFET. In this paper the authors present the first results for elevated temperature performance of a GaN JFET. Although the forward gate properties are well behaved at higher temperatures, the reverse characteristics show increased leakage at elevated temperature. However, the increased date leakage alone does not explain the observed increase in drain current with temperature. Therefore, they believe this first device is limited by temperature activated substrate conduction.

  13. An improved bipolar junction transistor model for electrical and radiation effects

    SciTech Connect

    Kleiner, C.T.; Messenger, G.C.

    1982-12-01

    The use of bipolar technology in hardened electronic design requires an in-depth understanding of how the Bipolar Junction Transistor (BJT) behaves under normal electrical and radiation environments. Significant improvements in BJT process technology have been reported, and the successful use of sophisticated Computer Aided Design (CAD) tools has aided implementation with respect to specific families of hardened devices. The most advanced BJT model used to date is the Improved Gummel-Poon (IGP) model which is used in CAA programs such as the SPICE II and SLICE programs. The earlier Ebers-Moll model (ref 1 and 2) has also been updated to compare with the older Gummel-Poon model. This paper describes an adaptation of an existing computer model which incorporates the best features of both models into a new, more accurate model called the Improved Bipolar Junction Transistor model. This paper also describes a unique approach to data reduction for the B(I /SUB c/) and V /SUB BE/(ACT) vs I /SUB c/characterizations which has been successfully programmed in Basic using a Commodore PET computer. This model is described in the following sections.

  14. Theoretical results on the tandem junction solar cell based on its Ebers-Moll transistor model

    NASA Technical Reports Server (NTRS)

    Goradia, C.; Vaughn, J.; Baraona, C. R.

    1980-01-01

    A one-dimensional theoretical model of the tandem junction solar cell (TJC) with base resistivity greater than about 1 ohm-cm and under low level injection has been derived. This model extends a previously published conceptual model which treats the TJC as an npn transistor. The model gives theoretical expressions for each of the Ebers-Moll type currents of the illuminated TJC and allows for the calculation of the spectral response, I(sc), V(oc), FF and eta under variation of one or more of the geometrical and material parameters and 1MeV electron fluence. Results of computer calculations based on this model are presented and discussed. These results indicate that for space applications, both a high beginning of life efficiency, greater than 15% AM0, and a high radiation tolerance can be achieved only with thin (less than 50 microns) TJC's with high base resistivity (greater than 10 ohm-cm).

  15. Impact of gate workfunction in junctionless versus junction SOI n-MOSFET transistor

    NASA Astrophysics Data System (ADS)

    Huda, A. R. N.; Arshad, M. K. Md.; Othman, Noraini; Voon, C. H.; Liu, Wei-Wen; Hashim, U.; Lee, H. Cheun; Adelyn, P. Y. P.; Kahar, S. M.

    2016-07-01

    In this paper, the effect of gate workfunction variation on DC characteristics in 100 nm gate length silicon-on-insulator (SOI) junctionless (JL) and junction transistors has been investigated by using numerical simulations. The digital figure-of-merits characteristics such as threshold voltage (VTH), on/off-current ratio, subthreshold voltage, and drain-induced-barrier-lowering are the main parameters that have been investigated. The rate of change in VTH with the respect to gate workfunction for both JLT and JT devices was almost same. Besides that, it shows the designated JLT device is achieving full-depletion at higher gate workfunction of more than 5.0 eV whereas the designated JT device is more wider range, ranging from low, mid-gap or high workfunction.

  16. Implementation of total dose effects in the bipolar junction transistor Gummel-Poon model

    SciTech Connect

    Montagner, X.; Fouillat, P.; Briand, R.; Touboul, A.; Schrimpf, R.D.; Galloway, K.F.; Calvet, M.C.; Calvel, P.

    1997-12-01

    The effects of total dose on the SPICE model of bipolar junction transistors are investigated. The limitations of the standard Gummel-Poon model for simulating the radiation-induced excess base current are analyzed, and a new model based on an empirical approach is proposed. Four new SPICE rad-parameters are presented, and investigated for different dose rates. The relevant parameters are extracted using a new algorithmic procedure, combining a genetic approach and the standard optimization technique which minimizes the RMS error between measured and simulated excess base current. It is shown that the excess base current is accurately described by the same formula whatever the device type is. An empirical fitting of the rad-parameters as a function of total dose is proposed to use in hardening electronic circuits for space-like environments.

  17. Fully transparent organic transistors with junction-free metallic network electrodes

    SciTech Connect

    Pei, Ke; Wang, Zongrong; Ren, Xiaochen; Zhang, Zhichao; Peng, Boyu; Chan, Paddy K. L.

    2015-07-20

    We utilize highly transparent, junction-free metal network electrodes to fabricate fully transparent organic field effect transistors (OFETs). The patterned transparent Ag networks are developed by polymer crack template with adjustable line width and density. Sheet resistance of the network is 6.8 Ω/sq and optical transparency in the whole visible range is higher than 80%. The bottom contact OFETs with DNTT active layer and parylene-C dielectric insulator show a maximum field-effect mobility of 0.13 cm{sup 2}/V s (average mobility is 0.12 cm{sup 2}/V s) and on/off ratio is higher than 10{sup 7}. The current OFETs show great potential for applications in the next generation of transparent and flexible electronics.

  18. Simulation of neutron displacement damage in bipolar junction transistors using high-energy heavy ion beams.

    SciTech Connect

    Doyle, Barney Lee; Buller, Daniel L.; Hjalmarson, Harold Paul; Fleming, Robert M; Bielejec, Edward Salvador; Vizkelethy, Gyorgy

    2006-12-01

    Electronic components such as bipolar junction transistors (BJTs) are damaged when they are exposed to radiation and, as a result, their performance can significantly degrade. In certain environments the radiation consists of short, high flux pulses of neutrons. Electronics components have traditionally been tested against short neutron pulses in pulsed nuclear reactors. These reactors are becoming less and less available; many of them were shut down permanently in the past few years. Therefore, new methods using radiation sources other than pulsed nuclear reactors needed to be developed. Neutrons affect semiconductors such as Si by causing atomic displacements of Si atoms. The recoiled Si atom creates a collision cascade which leads to displacements in Si. Since heavy ions create similar cascades in Si we can use them to create similar damage to what neutrons create. This LDRD successfully developed a new technique using easily available particle accelerators to provide an alternative to pulsed nuclear reactors to study the displacement damage and subsequent transient annealing that occurs in various transistor devices and potentially qualify them against radiation effects caused by pulsed neutrons.

  19. Analysis of generation and annihilation of deep level defects in a silicon-irradiated bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Madhu, K. V.; Kulkarni, S. R.; Ravindra, M.; Damle, R.

    2007-08-01

    A commercial bipolar junction transistor (2 N 2219 A, npn), irradiated with 120 MeV Si9+ ions with a fluence of the order of 1012 ions cm-2, is studied for radiation-induced gain degradation and deep level defects. I-V measurements are made to study the gain degradation as a function of ion fluence. Properties such as activation energy, trap concentration and capture cross section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap energy levels with energies ranging from EC - 0.160 eV to EC - 0.581 eV are observed in the base-collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from EV + 0.182 eV to EV + 0.401 eV. The identification of the defect type is made on the basis of its finger prints such as activation energy, annealing temperature and capture cross section by comparing with those reported in the literature. New energy levels for the defects A-center, di-vacancy and Si-interstitial are also observed. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 250 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation.

  20. Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

    SciTech Connect

    Rajamohanan, Bijesh Mohata, Dheeraj; Hollander, Matthew; Datta, Suman; Zhu, Yan; Hudait, Mantu; Jiang, Zhengping; Klimeck, Gerhard

    2014-01-28

    In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which exhibited drive current of 0.3 μA/μm at V{sub DS} = −0.5 V under DC biasing conditions. Additionally, with pulsing of 1 μs gate voltage, hetJ pTFET exhibited enhanced drive current of 85 μA/μm at V{sub DS} = −0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies.

  1. An improved bipolar junction transistor model for electrical and radiation effects

    NASA Astrophysics Data System (ADS)

    Kleiner, C. T.; Messenger, G. C.

    1982-12-01

    A bipolar transistor model is introduced which combines most of the best features of the modified Ebers-Moll (1954) model with the Gummel-Poon (1970) model. The model is constructed of two modified Ebers-Moll models with the addition of junction and basewidth modulation to account for leakage current dependence on reverse voltage and beta dependence on collector-emitter voltage. The electrical characteristics that can be obtained with the model include: nonlinear beta and V(BE) vs normal I(C) and/or inverted I(E); increase in f(T) from low injection to peak beta and decrease in f(T) beyond peak beta; nonlinear R(CX) vs I(C) and V(CE); inclusion of base-width modulation as a function of reverse bias for V(CB) or V(EB); and inclusion of junction leakage as a function of reverse bias. Radiation characteristics that can be obtained include: photocurrent generation and saturation including photocurrent response time; dose-rate modulation of resistors; inclusion of neutron damage constant as a function of injection level and incorporation of fast annealing; inclusion of temperature dependence.

  2. Programmable Schottky Junctions Based on Ferroelectric Gated MoS2 Transistors

    NASA Astrophysics Data System (ADS)

    Xiao, Zhiyong; Song, Jingfeng; Drcharme, Stephen; Hong, Xia

    We report a programmable Schottky junction based on MoS2 field effect transistors with a SiO2 back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated mechanically exfoliated single layer MoS2 flakes into two point devices via e-beam lithography, and deposited on the top of the devices ~20 nm PVDF thin films. The polarization of the PVDF layer is controlled locally by conducting atomic force microscopy. The devices exhibit linear ID-VD characteristics when the ferroelectric gate is uniformly polarized in one direction. We then polarized the gate into two domains with opposite polarization directions, and observed that the ID-VD characteristics of the MoS2 channel can be modulated between linear and rectified behaviors depending on the back gate voltage. The nonlinear ID-VD relation emerges when half of the channel is in the semiconductor phase while the other half is in the metallic phase, and it can be well described by the thermionic emission model with a Schottky barrier of ~0.5 eV. The Schottky junction can be erased by re-write the entire channel in the uniform polarization state. Our study facilitates the development of programmable, multifunctional nanoelectronics based on layered 2D TMDs..

  3. Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates

    NASA Astrophysics Data System (ADS)

    Qi-Feng, Zhao; Yi-Qi, Zhuang; Jun-Lin, Bao; Wei, Hu

    2016-04-01

    It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and the model of surface recombination current, a 1/f noise model is developed. This model suggests that 1/f noise degradations are the result of the accumulation of oxide-trapped charges and interface states. Combining models of ELDRS, this model can explain the reason why the 1/f noise degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 700 Gy(Si). The low dose rate was 0.001 Gy(Si)/s and the high dose rate was 0.1 Gy(Si)/s. The model accords well with the experimental results. Project supported by the National Natural Science Foundation of China (Grant Nos. 61076101 and 61204092).

  4. Analysis of high-voltage metal–oxide–semiconductor transistors with gradual junction in the drift region

    NASA Astrophysics Data System (ADS)

    Chen, Jone F.; Ai, Teng-Jen; Tsai, Yan-Lin; Hsu, Hao-Tang; Chen, Chih-Yuan; Hwang, Hann-Ping

    2016-08-01

    The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal–oxide–semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this study is realized by self-aligned N‑ implantation through dual thicknesses of screen oxide during N‑ drift implantation. Compared with traditional devices, devices with gradual junctions have improved off-state breakdown voltage (V BD) without sacrificing on-state driving current and hot-carrier-induced degradation. More improvement in V BD is observed if the dimensions of the device are larger. The mechanism responsible for V BD improvement in devices with gradual junctions is also investigated by using technology computer-aided-design simulations.

  5. Antenna-Coupled Superconducting Tunnel Junctions with Single-Electron Transistor Readout for Detection of Sub-mm Radiation

    NASA Technical Reports Server (NTRS)

    Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Teufel, J.; Krebs, Carolyn (Technical Monitor)

    2002-01-01

    Antenna-coupled superconducting tunnel junction detectors have the potential for photon-counting sensitivity at sub-mm wavelengths. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

  6. All-optical transistors and logic gates using a parity-time-symmetric Y-junction: Design and simulation

    SciTech Connect

    Ding, Shulin; Wang, Guo Ping

    2015-09-28

    Classical nonlinear or quantum all-optical transistors are dependent on the value of input signal intensity or need extra co-propagating beams. In this paper, we present a kind of all-optical transistors constructed with parity-time (PT)-symmetric Y-junctions, which perform independently on the value of signal intensity in an unsaturated gain case and can also work after introducing saturated gain. Further, we show that control signal can switch the device from amplification of peaks in time to transformation of peaks to amplified troughs. By using these PT-symmetric Y-junctions with currently available materials and technologies, we can implement interesting logic functions such as NOT and XOR (exclusive OR) gates, implying potential applications of such structures in designing optical logic gates, optical switches, and signal transformations or amplifications.

  7. Design and simulation of oxide and doping engineered lateral bipolar junction transistors for high power applications

    NASA Astrophysics Data System (ADS)

    Loan, Sajad A.; Bashir, Faisal; Akhoon, M. Saqib; Alamoud, Abdulrahman M.

    2016-01-01

    In this paper, we propose new structures of lateral bipolar junction transistor (LBJT) on silicon on insulator (SOI) with improved performance. The proposed devices are lateral bipolar transistors with multi doping zone collector drift region and a thick buried oxide under the collector region. Calibrated simulation studies have revealed that the proposed devices have higher breakdown voltage than the conventional device, that too at higher drift doping concentration. This has resulted in improved tradeoff between the on-resistance and the breakdown voltage of the proposed devices. It has been observed that the proposed device with two collector drift doping zones and a buried oxide thick step results in ∼190% increase in the breakdown voltage than the conventional device. The further increase in the number of collector drift doping zones from two to three has increased the breakdown voltage by 260% than the conventional one. On comparing the proposed devices with the buried oxide double step devices, it has been found that an increase of ∼15-19% in the breakdown voltage is observed in the proposed devices even at higher drift doping concentrations. The use of higher drift doping concentration reduces the on-resistance of the proposed device and thus improves the tradeoff between the breakdown voltage and the on-resistance of the proposed device in comparison to buried oxide double step devices. Further, the use of step doping in the collector drift region has resulted in the reduction of kink effect in the proposed device. Using the mixed mode simulations, the proposed devices have been tested at the circuit level, by designing and simulating inverting amplifiers employing the proposed devices. Both DC and AC analyses of the inverting amplifiers have shown that the proposed devices work well at the circuit level. It has been observed that there is a slight increase in ON delay in the proposed device; however, the OFF delay is more or less same as that of the

  8. Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

    NASA Technical Reports Server (NTRS)

    Shibib, M. A.; Lindholm, F. A.; Fossum, J. G.

    1979-01-01

    A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

  9. Fabrication and characterization of GaN junction field effect transistors

    SciTech Connect

    Zhang, L.; Lester, L.F.; Baca, A.G.; Shul, R.J.; Chang, P.C.; Willison, C.L.; Mishra, U.K.; Denbaars, S.P.; Zolper, J.C.

    2000-01-11

    Junction field effect transistors (JFET) were fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition. The DC and microwave characteristics, as well as the high temperature performance of the devices were studied. These devices exhibited excellent pinch-off and a breakdown voltage that agreed with theoretical predictions. An extrinsic transconductance (g{sub m}) of 48 mS/mm was obtained with a maximum drain current (I{sub D}) of 270 mA/mm. The microwave measurement showed an f{sub T} of 6 GHz and an f{sub max} of 12 GHz. Both the I{sub D} and the g{sub m} were found to decrease with increasing temperature, possibly due to lower electron mobility at elevated temperatures. These JFETs exhibited a significant current reduction after a high drain bias was applied, which was attributed to a partially depleted channel caused by trapped electrons in the semi-insulating GaN buffer layer.

  10. Effect of thin emitter set-back layer on GaAs delta-doped emitter bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Lew, K. L.; Yoon, S. F.

    2005-05-01

    GaAs delta-doped emitter bipolar junction transistors (δ-BJT) with different emitter set-back layer thicknesses of 10to50nm were fabricated to study the emitter set-back layer thickness effect on device dc performance. We found that the current gain decreases following decrease in the emitter set-back layer thickness. A detailed analysis was performed to explain this phenomenon, which is believed to be caused by reduction of the effective barrier height in the δ-BJT. This is due to change in the electric-field distribution in the delta-doped structure caused by the built-in potential of the base-emitter (B-E ) junction. Considering the recombination and barrier height reduction effects, the thickness of the emitter set-back layer should be designed according to the B-E junction depletion width with a tolerance of ±5nm. The dc performance of a δ-BJT designed based on this criteria is compared to that of a Al0.25Ga0.75As /GaAs heterojunction bipolar transistor (HBT). Both devices employed base doping of 2×1019cm-3 and base-to-emitter doping ratio of 40. Large emitter area (AE≈1.6×10-5cm-2) and small emitter area (AE≈1.35×10-6cm-2) device current gains of 40 and 20, respectively, were obtained in both types of transistors passivated by (NH4)2S treatment. The measured current gain of the GaAs δ-BJT is the highest reported for a homojunction device with such high base-to-emitter doping ratio normally used in HBT devices.

  11. Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions

    NASA Astrophysics Data System (ADS)

    Ryzhii, V.; Ryzhii, M.; Shur, M. S.; Mitin, V.; Satou, A.; Otsuji, T.

    2016-08-01

    We evaluate the proposed resonant terahertz (THz) detectors on the basis of field-effect transistors (FETs) with split gates, electrically induced lateral p–n junctions, uniform graphene layer (GL) or perforated (in the p–n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes and electrons. The operation of the GL-FET- and PGL-FET-detectors is associated with the rectification of the ac current across the lateral p–n junction enhanced by the excitation of bound plasmonic oscillations in the p- and n-sections of the channel. Using the developed device model, we find the GL-FET- and PGL-FET-detector characteristics. These detectors can exhibit very high voltage responsivity at the THz radiation frequencies close to the frequencies of the plasmonic resonances. These frequencies can be effectively voltage tuned. We show that in PL-FET-detectors the dominant mechanism of the current rectification is due to the tunneling nonlinearity, whereas in the PGL-FET-detector the current rectification is primarily associated with the thermionic processes. Due to much lower p–n junction conductance in the PGL-FET-detectors, their resonant response can be substantially more pronounced than in the GL-FET-detectors corresponding to fairly high detector responsivity.

  12. Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor

    NASA Astrophysics Data System (ADS)

    Yuan, Heng; Zhang, Ji-Xing; Zhang, Chen; Zhang, Ning; Xu, Li-Xia; Ding, Ming; Patrick, J. Clarke

    2015-02-01

    A low gate voltage operated multi-emitter-dot gated lateral bipolar junction transistor (BJT) ion sensor is proposed. The proposed device is composed of an arrayed gated lateral BJT, which is driven in the metal-oxide-semiconductor field-effect transistor (MOSFET)-BJT hybrid operation mode. Further, it has multiple emitter dots linked to each other in parallel to improve ionic sensitivity. Using hydrogen ionic solutions as reference solutions, we conduct experiments in which we compare the sensitivity and threshold voltage of the multi-emitter-dot gated lateral BJT with that of the single-emitter-dot gated lateral BJT. The multi-emitter-dot gated lateral BJT not only shows increased sensitivity but, more importantly, the proposed device can be operated under very low gate voltage, whereas the conventional ion-sensitive field-effect transistors cannot. This special characteristic is significant for low power devices and for function devices in which the provision of a gate voltage is difficult.

  13. Superconducting transistor

    DOEpatents

    Gray, Kenneth E.

    1979-01-01

    A superconducting transistor is formed by disposing three thin films of superconducting material in a planar parallel arrangement and insulating the films from each other by layers of insulating oxides to form two tunnel junctions. One junction is biased above twice the superconducting energy gap and the other is biased at less than twice the superconducting energy gap. Injection of quasiparticles into the center film by one junction provides a current gain in the second junction.

  14. Evaluation and Control of Break-Even Time of Nonvolatile Static Random Access Memory Based on Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Shuto, Yusuke; Yamamoto, Shuu'ichirou; Sugahara, Satoshi

    2012-04-01

    The energy performance of a nonvolatile static random access memory (NV-SRAM) cell for power gating applications was quantitatively analyzed for the first time using the performance index of break-even time (BET). The NV-SRAM cell is based on spin-transistor architecture using ordinary metal-oxide-semiconductor field-effect transistors (MOSFETs) and spin-transfer-torque magnetic tunnel junctions (STT-MTJs), whose circuit representation of spin-transistor is referred to as a pseudo-spin-MOSFET (PS-MOSFET). The cell is configured with a standard six-transistor SRAM cell and two PS-MOSFETs. The NV-SRAM cell basically has a short BET of submicroseconds. Although the write (store) operation to the STT-MTJs causes an increase in the BET, it can be successfully reduced by the proposed power-aware bias-control for the PS-MOSFETs.

  15. Limit of validity of the thermionic-field-emission treatment of electron injection across emitter-base junctions in abrupt heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Kumar, T.; Cahay, M.; Shi, S.; Roenker, K.; Stanchina, W. E.

    1995-06-01

    A hybrid model is developed to simulate electron transport through the emitter-base heterojunction and the base region of abrupt heterojunction bipolar transistors. The energy distribution of the injected electron flux through the emitter-base junction is calculated using a rigorous quantum-mechanical treatment of electron tunneling and thermionic emission across the spike at the emitter-base junction. The results are compared with those predicted by the conventional thermionic-field-emission model. For both models, the electron fluxes injected across the emitter-base junction are used as initial energy distributions in a regional Monte Carlo calculation to model electron transport through the base. The average base transit times are calculated using the impulse response technique as a function of the emitter-base voltage. The differences between the thermionic-field-emission model and the rigorous quantum-mechanical approaches to model electron transport through abrupt heterojunction bipolar transistors are pointed out.

  16. Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Kangho; Lu, Gang; Facchetti, Antonio; Janes, David B.; Marks, Tobin J.

    2008-03-01

    Control of semiconductor interface state density with molecular passivation is essential for developing conduction-based biosensors. In this study, GaAs junction field effect transistors (JFETs) are fabricated and characterized before and after passivation of the GaAs surface with self-assembled mono- and multilayers. The JFETs functionalized with 1-octadecanethiol monolayers and two types of self-assembled organic nanodielectric (SAND) multilayers exhibit significantly different threshold voltage (Vth) and subthreshold slope (Ssub) characteristics versus the unpassivated devices and provide useful information on the quality of the passivation. Two-dimensional device simulations quantify the effective density of fixed surface charges and interfacial traps and argue for the importance of the type-III SAND ionic charges in enhancing GaAs JFET response characteristics.

  17. MOSFET-BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection.

    PubMed

    Yuan, Heng; Kwon, Hyurk-Choon; Yeom, Se-Hyuk; Kwon, Dae-Hyuk; Kang, Shin-Won

    2011-10-15

    In this study, we propose a novel biosensor based on a gated lateral bipolar junction transistor (BJT) for biomaterial detection. The gated lateral BJT can function as both a BJT and a metal-oxide-semiconductor field-effect transistor (MOSFET) with both the emitter and source, and the collector and drain, coupled. C-reactive protein (CRP), which is an important disease marker in clinical examinations, can be detected using the proposed device. In the MOSFET-BJT hybrid mode, the sensitivity, selectivity, and reproducibility of the gated lateral BJT for biosensors were evaluated in this study. According to the results, in the MOSFET-BJT hybrid mode, the gated lateral BJT shows good selectivity and reproducibility. Changes in the emitter (source) current of the device for CRP antigen detection were approximately 0.65, 0.72, and 0.80 μA/decade at base currents of -50, -30, and -10 μA, respectively. The proposed device has significant application in the detection of certain biomaterials that require a dilution process using a common biosensor, such as a MOSFET-based biosensor. PMID:21835604

  18. Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.

    PubMed

    Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

    2016-02-10

    Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics. PMID:26771206

  19. Non-ideal effect in 4H-SiC bipolar junction transistor with double Gaussian-doped base

    NASA Astrophysics Data System (ADS)

    Yuan, Lei; Zhang, Yu-Ming; Song, Qing-Wen; Tang, Xiao-Yan; Zhang, Yi-Men

    2015-06-01

    The non-ideal effect of 4H-SiC bipolar junction transistor (BJT) with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between SiC and SiO2, the simulation results are in good agreement with the experiment data. An obvious early effect is found from the output characteristic. As the temperature rises, the early voltage increases, while the current gain gradually decreases, which is totally different from the scenario of silicon BJT. With the same effective Gummel number in the base region, the double Gaussian-doped base structure can realize higher current gain than the single base BJT due to the built-in electric field, whereas the early effect will be more salient. Besides, the emitter current crowding effect is also analyzed. Due to the low sheet resistance in the first highly-doped base epilayer, the 4H-BJT with a double base has more uniform emitter current density across the base-emitter junction, leading to better thermal stability. Project supported by the National Natural Science Foundation of China (Grant Nos. 60876061 and 61234006), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2013JQ8012), and the Doctoral Fund of the Ministry of Education of China (Grant Nos. 20130203120017 and 20110203110010).

  20. A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

    NASA Astrophysics Data System (ADS)

    Deng, Yong-Hui; Xie, Gang; Wang, Tao; Sheng, Kuang

    2013-09-01

    In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8 × 1017 cm-3 contribute to a maximum current gain of only 128.

  1. Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

    NASA Technical Reports Server (NTRS)

    Chen, Dakai; Ladbury Raymond; LaBel, Kenneth; Topper, Alyson; Ladbury, Raymond; Triggs, Brian; Kazmakites, Tony

    2012-01-01

    We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of 3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s exceeded specifications after 40 and 50 krad(Si) for the 2N2222 and 2N2907 devices, respectively.

  2. Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

    NASA Technical Reports Server (NTRS)

    Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Prober, D. E.; Rhee, K. W.; Schoelkopf, R. J.; Stahle, C. M.; Teufel, J.; Wollack, E. J.

    2004-01-01

    For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

  3. Normal metal tunnel junction-based superconducting quantum interference proximity transistor

    SciTech Connect

    D'Ambrosio, Sophie Meissner, Martin; Blanc, Christophe; Ronzani, Alberto; Giazotto, Francesco

    2015-09-14

    We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the proximized metal nanowire and the N probe allows us to observe the full modulation of the wire density of states around zero voltage and current via the application of an external magnetic field. This results into a drastic suppression of power dissipation which can be as low as a few ∼10{sup −17} W. In this context, the interferometer allows an improvement of up to four orders of magnitude with respect to earlier SQUIPT designs and makes it ideal for extra-low power cryogenic applications. In addition, the N-SQUIPT has been recently predicted to be the enabling candidate for the implementation of coherent caloritronic devices based on proximity effect.

  4. Optically Induced PN Junction Diode and Photovoltaic Response on Ambipolar MoSe2 Field-effect Transistor

    NASA Astrophysics Data System (ADS)

    Pradhan, Nihar; Lu, Zhengguang; Rhodes, Daniel; Terrones, Mauricio; Smirnov, Dmitry; Balicas, Luis

    2015-03-01

    Transition metal dichalcogenides (TMDs) have emerged as an attractive material for electronic and optoelectronic devices due to their sizable band gap, flexibility and reduced dimensionality, which makes them promising candidates for applications in translucent optoelectronics components, such as solar cells and light emitting diodes. Here, we present an optically induced diode like response and concomitant photovoltaic effect in few-atomic layers molybdenum diselenide (MoSe2) field-effect transistors. Compared to recently reported PN junctions based on TMDs, ambipolar MoSe2 shows nearly ideal diode rectification under illumination, with a sizable photovoltaic efficiency. The observed light induced diode response under fixed gate voltage, yields a maximum open circuit voltage 0.28V and short circuit current 230nA at 30uW incident laser power. The sense of current rectification can be altered by changing the polarity of the applied gate voltage (Vbg) . At Vbg = 0V the highest electrical power obtained is 175pW corresponding to a maximum photovoltaic efficiency of 0.01%. These values increased to 11nW and 0.05% under a Vbg = -7.5V. At an excitation voltage 1V we observed maximum photocurrent responsivity surpassing 100mA/W with corresponding external quantum efficiency ~ 30%.

  5. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Kangho; Nair, Pradeep R.; Alam, Muhammad A.; Janes, David B.; Wampler, Heeyeon P.; Zemlyanov, Dmitry Y.; Ivanisevic, Albena

    2008-06-01

    GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions in physiological solutions and the TAT peptide providing selective binding sites for TAR RNA. The devices modified with the mixed adlayer exhibit a negative pinch-off voltage (VP) shift, which is attributed to the fixed positive charges from the arginine-rich regions in the TAT peptide. Immersing the modified devices into a TAR RNA solution results in a large positive VP shift (>1 V) and a steeper subthreshold slope (˜80 mV/decade), whereas "dummy" RNA induced a small positive VP shift (˜0.3 V) without a significant change in subthreshold slopes (˜330 mV/decade). The observed modulation of device characteristics is analyzed with analytical modeling and two-dimensional numerical device simulations to investigate the electronic interactions between the GaAs JFETs and biological molecules.

  6. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors

    PubMed Central

    Lee, Kangho; Nair, Pradeep R.; Alam, Muhammad A.; Janes, David B.; Wampler, Heeyeon P.; Zemlyanov, Dmitry Y.; Ivanisevic, Albena

    2008-01-01

    GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions in physiological solutions and the TAT peptide providing selective binding sites for TAR RNA. The devices modified with the mixed adlayer exhibit a negative pinch-off voltage (VP) shift, which is attributed to the fixed positive charges from the arginine-rich regions in the TAT peptide. Immersing the modified devices into a TAR RNA solution results in a large positive VP shift (>1 V) and a steeper subthreshold slope (∼80 mV∕decade), whereas “dummy” RNA induced a small positive VP shift (∼0.3 V) without a significant change in subthreshold slopes (∼330 mV∕decade). The observed modulation of device characteristics is analyzed with analytical modeling and two-dimensional numerical device simulations to investigate the electronic interactions between the GaAs JFETs and biological molecules. PMID:19484151

  7. Stability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances

    NASA Astrophysics Data System (ADS)

    Imai, Shigeru; Kato, Hiroki; Hiraoka, Yasuhiro

    2012-12-01

    Stability diagrams of single-common-gate double-dot single-electron transistors are drawn in the Vg-V plane using the exact formulas that represent Coulomb blockade conditions, where the gate, source, and drain voltages are Vg, -V/2, and V/2, respectively. The stability regions are arranged along the Vg axis with no overlap. If gate capacitances Cg1 and Cg2 satisfy Cg1/m1 = Cg2/m2 = C0, the stability diagram is periodic with the period of e/C0 along the Vg axis, where m1 and m2 are natural numbers prime to each other. The stability diagram is point-symmetrical with respect to the point (me/2C0, 0) for all integers m. If Vg increases at V = 0, electrons are transferred into the islands under a rule, which can be explained in terms of periodicity and symmetry. The detailed features are described for the cases of uniform gate capacitances and uniform junction capacitances.

  8. Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.

    1981-01-01

    New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

  9. Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1−x}As/AlGaAs tunnel junction light-emitting transistors

    SciTech Connect

    Wu, Cheng-Han; Wu, Chao-Hsin

    2014-10-27

    The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In{sub x}Ga{sub 1−x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

  10. Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 C

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.

    2006-01-01

    Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out.

  11. Static and switching characteristics of 3.3 kV double channel-doped SiC vertical junction field effect transistor in cascode configuration

    NASA Astrophysics Data System (ADS)

    Shimizu, Haruka; Akiyama, Satoru; Yokoyama, Natsuki; Shima, Akio; Shimamoto, Yasuhiro

    2015-04-01

    A silicon-carbide (SiC) junction field-effect transistor (JFET)/Si metal-oxide-semiconductor field-effect transistor (MOSFET) cascode is a good solution owing to its high reliability, low on-resistance, high switching speed, and good gate controllability. A 3.3 kV SiC vertical JFET using a double channel doping technique is proposed in this paper. The characteristics of a cascode including the developed JFET are also presented. A blocking voltage higher than 4.0 kV and a low on-resistance of 14.7 mΩ cm2 were realized. The saturation current of the cascode was suppressed by controlling the threshold voltage of the JFET. Moreover, small switching losses were obtained.

  12. Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

    NASA Astrophysics Data System (ADS)

    Kizilyalli, I. C.; Aktas, O.

    2015-12-01

    There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

  13. Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation using Superconducting Tunnel Junctions with Radio-Frequency Single-Electron Transistors

    NASA Technical Reports Server (NTRS)

    Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Krebs, Carolyn (Technical Monitor)

    2002-01-01

    The science drivers for the SPIRIT/SPECS missions demand sensitive, fast, compact, low-power, large-format detector arrays for high resolution imaging and spectroscopy in the far infrared and submillimeter. Detector arrays with 10,000 pixels and sensitivity less than 10(exp 20)-20 W/Hz(exp 20)0.5 are needed. Antenna-coupled superconducting tunnel junction detectors with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique when forming arrays. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

  14. STABILIZED TRANSISTOR AMPLIFIER

    DOEpatents

    Noe, J.B.

    1963-05-01

    A temperature stabilized transistor amplifier having a pair of transistors coupled in cascade relation that are capable of providing amplification through a temperature range of - 100 un. Concent 85% F to 400 un. Concent 85% F described. The stabilization of the amplifier is attained by coupling a feedback signal taken from the emitter of second transistor at a junction between two serially arranged biasing resistances in the circuit of the emitter of the second transistor to the base of the first transistor. Thus, a change in the emitter current of the second transistor is automatically corrected by the feedback adjustment of the base-emitter potential of the first transistor and by a corresponding change in the base-emitter potential of the second transistor. (AEC)

  15. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

    SciTech Connect

    Yeluri, Ramya Lu, Jing; Keller, Stacia; Mishra, Umesh K.; Hurni, Christophe A.; Browne, David A.; Speck, James S.; Chowdhury, Srabanti

    2015-05-04

    The Current Aperture Vertical Electron Transistor (CAVET) combines the high conductivity of the two dimensional electron gas channel at the AlGaN/GaN heterojunction with better field distribution offered by a vertical design. In this work, CAVETs with buried, conductive p-GaN layers as the current blocking layer are reported. The p-GaN layer was regrown by metalorganic chemical vapor deposition and the subsequent channel regrowth was done by ammonia molecular beam epitaxy to maintain the p-GaN conductivity. Transistors with high ON current (10.9 kA/cm{sup 2}) and low ON-resistance (0.4 mΩ cm{sup 2}) are demonstrated. Non-planar selective area regrowth is identified as the limiting factor to transistor breakdown, using planar and non-planar n/p/n structures. Planar n/p/n structures recorded an estimated electric field of 3.1 MV/cm, while non-planar structures showed a much lower breakdown voltage. Lowering the p-GaN regrowth temperature improved breakdown in the non-planar n/p/n structure. Combining high breakdown voltage with high current will enable GaN vertical transistors with high power densities.

  16. A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

    NASA Astrophysics Data System (ADS)

    Shui, Qiong

    This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to

  17. Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals

    NASA Astrophysics Data System (ADS)

    Lu, Shang-Chun; Mohamed, Mohamed; Zhu, Wenjuan

    2016-03-01

    Vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides are proposed and studied by numerical simulations employing the semi-classical density gradient quantum correction model. It is found that the vertical TFET based on BP can achieve high on-current (>200 μA μm-1) and steep subthreshold swing (average value = 24.6 mV/dec) simultaneously, due to its high mobility, direct narrow bandgap, and low dielectric constant. We also found that the on-current in vertical TFETs based on MoS2/MoSe2 hetero-junction is two orders of magnitudes higher than the one in MoS2 homo-junction TFET, due to the reduced effective bandgap in heterostructure with staggered band alignment. In addition, we present various design considerations and recommendations as well as provide a qualitative comparison with published data.

  18. Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

    NASA Astrophysics Data System (ADS)

    Chen, Si-Zhe; Sheng, Kuang

    2014-07-01

    We present the design consideration and fabrication of 4H-SiC trenched-and-implanted vertical junction field-effect transistors (TI-VJFETs). Different design factors, including channel width, channel doping, and mesa height, are considered and evaluated by numerical simulations. Based on the simulation result, normally-on and normally-off devices are fabricated. The fabricated device has a 12 μm thick drift layer with 8×1015 cm-3 N-type doping and 2.6 μm channel length. The normally-on device shows a 1.2 kV blocking capability with a minimum on-state resistance of 2.33 mΩ·cm2, while the normally-off device shows an on-state resistance of 3.85 mΩ·cm2. Both the on-state and the blocking performances of the device are close to the state-of-the-art values in this voltage range.

  19. Simple phenomenological modeling of transition-region capacitance of forward-biased p-n junction diodes and transistor diodes

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1982-01-01

    The derivation of a simple expression for the capacitance C(V) associated with the transition region of a p-n junction under a forward bias is derived by phenomenological reasoning. The treatment of C(V) is based on the conventional Shockley equations, and simpler expressions for C(V) result that are in general accord with the previous analytical and numerical results. C(V) consists of two components resulting from changes in majority carrier concentration and from free hole and electron accumulation in the space-charge region. The space-charge region is conceived as the intrinsic region of an n-i-p structure for a space-charge region markedly wider than the extrinsic Debye lengths at its edges. This region is excited in the sense that the forward bias creates hole and electron densities orders of magnitude larger than those in equilibrium. The recent Shirts-Gordon (1979) modeling of the space-charge region using a dielectric response function is contrasted with the more conventional Schottky-Shockley modeling.

  20. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

    PubMed Central

    Salah, Tarek Ben; Khachroumi, Sofiane; Morel, Hervé

    2010-01-01

    Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned. PMID:22315547

  1. John Bardeen and transistor physics

    NASA Astrophysics Data System (ADS)

    Huff, Howard R.

    2001-01-01

    John Bardeen and Walter Brattain invented the point-contact semiconductor amplifier (transistor action) in polycrystalline germanium (also observed in polycrystalline silicon) on Dec. 15, 1947, for which they received a patent on Oct. 3, 1950. Bill Shockley was not a co-patent holder on Bardeen and Brattain's point-contact semiconductor amplifier patent since Julius Lilienfeld had already received a patent in 1930 for what would have been Shockley's contribution; namely, the field-effect methodology. Shockley received patents for both his minority-carrier injection concept and junction transistor theory, however, and deservedly shared the Nobel prize with Bardeen and Brattain for his seminal contributions of injection, p-n junction theory and junction transistor theory. We will review the events leading up to the invention of Bardeen and Brattain's point-contact semiconductor amplifier during the magic month of November 17-December 16, 1947 and the invention of Shockley's junction semiconductor amplifier during his magic month of December 24, 1947-January 23, 1948. It was during the course of Bardeen and Brattain's research in November, 1947 that Bardeen also patented the essence of the MOS transistor, wherein the induced minority carriers were confined to the inversion layer enroute to the collector. C. T. Sah has described this device as a sourceless MOS transistor. Indeed, John Bardeen, co-inventor of the point-contact semiconductor amplifier and inventor of the MOS transistor, may rightly be called the father of modern electronics.

  2. Neurons from rat brain coupled to transistors

    NASA Astrophysics Data System (ADS)

    Vassanelli, S.; Fromherz, P.

    Field-effect transistors form spontaneously capacitive junctions with cultured nerve cells from rat brains. The transfer of ac signals from neurons to silicon is studied and used to parametrize an equivalent circuit. The coupling is distinctly weaker than in junctions assembled with leech nerve cells. The implications with respect to the recording and stimulation of neuronal activity by silicon devices are considered.

  3. Multimode silicon nanowire transistors.

    PubMed

    Glassner, Sebastian; Zeiner, Clemens; Periwal, Priyanka; Baron, Thierry; Bertagnolli, Emmerich; Lugstein, Alois

    2014-11-12

    The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A heterostructural device design is achieved by employing a self-aligned nickel-silicide source contact. The polymorph operation of the dual-gate device enabling the configuration of one p- and two n-type transistor modes is demonstrated. Not only the type but also the carrier injection mode can be altered by appropriate biasing of the two gate terminals or by inverting the drain bias. With a combined band-to-band and Schottky tunneling mechanism, in p-type mode a subthreshold swing as low as 143 mV/dec and an ON/OFF ratio of up to 10(4) is found. As the device operates in forward bias, a nonconventional tunneling transistor is realized, enabling an effective suppression of ambipolarity. Depending on the drain bias, two different n-type modes are distinguishable. The carrier injection is dominated by thermionic emission in forward bias with a maximum ON/OFF ratio of up to 10(7) whereas in reverse bias a Schottky tunneling mechanism dominates the carrier transport. PMID:25303290

  4. Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

    NASA Astrophysics Data System (ADS)

    Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

    2016-04-01

    In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

  5. Carbon nanotube intramolecular junctions

    NASA Astrophysics Data System (ADS)

    Yao, Zhen; Postma, Henk W. Ch.; Balents, Leon; Dekker, Cees

    1999-11-01

    The ultimate device miniaturization would be to use individual molecules as functional devices. Single-wall carbon nanotubes (SWNTs) are promising candidates for achieving this: depending on their diameter and chirality, they are either one-dimensional metals or semiconductors. Single-electron transistors employing metallic nanotubes and field-effect transistors employing semiconducting nanotubes have been demonstrated. Intramolecular devices have also been proposed which should display a range of other device functions. For example, by introducing a pentagon and a heptagon into the hexagonal carbon lattice, two tube segments with different atomic and electronic structures can be seamlessly fused together to create intramolecular metal-metal, metal-semiconductor, or semiconductor-semiconductor junctions. Here we report electrical transport measurements on SWNTs with intramolecular junctions. We find that a metal-semiconductor junction behaves like a rectifying diode with nonlinear transport characteristics that are strongly asymmetric with respect to bias polarity. In the case of a metal-metal junction, the conductance appears to be strongly suppressed and it displays a power-law dependence on temperatures and applied voltage, consistent with tunnelling between the ends of two Luttinger liquids. Our results emphasize the need to consider screening and electron interactions when designing and modelling molecular devices. Realization of carbon-based molecular electronics will require future efforts in the controlled production of these intramolecular nanotube junctions.

  6. Refined Transistor Model For Simulation Of SEU

    NASA Technical Reports Server (NTRS)

    Zoutendyk, John A.; Benumof, Reuben

    1988-01-01

    Equivalent base resistance added. Theoretical study develops equations for parameters of Gummel-Poon model of bipolar junction transistor: includes saturation current, amplification factors, charging times, knee currents, capacitances, and resistances. Portion of study concerned with base region goes beyond Gummel-Poon analysis to provide more complete understanding of transistor behavior. Extended theory useful in simulation of single-event upset (SEU) caused in logic circuits by cosmic rays or other ionizing radiation.

  7. An Ebers-Moll model for the heterostructure bipolar transistor

    NASA Astrophysics Data System (ADS)

    Lundstrom, M. S.

    1986-11-01

    An Ebers-Moll model for the heterostructure bipolar transistor (HBT) is developed. The model describes both single and double heterojunction transistors with or without band spikes and applies to uniform or graded base HBTs. Model parameters are directly related to device parameters such as doping densities, dimensions and band spikes. Junction velocities are introduced to describe the transport of carriers across the junctions. Results demonstrate that even for compositionally graded junctions, transport across the junctions may limit HBT performance if the base is graded. Use of the model is illustrated by examining a recently proposed technique for extracting conduction band spikes by comparing forward and inverted I- V characteristics.

  8. Gate protective device for insulated gate field-effect transistors

    NASA Technical Reports Server (NTRS)

    Sunshine, R. A.

    1972-01-01

    Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region. Separation of layers is necessary to prevent shorting out junctions between alternating regions.

  9. Magnetic Vortex Based Transistor Operations

    PubMed Central

    Kumar, D.; Barman, S.; Barman, A.

    2014-01-01

    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan–out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT). PMID:24531235

  10. Analysis of long-channel nanotube field-effect-transistors (NT FETs)

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Kwak, Dochan (Technical Monitor)

    2001-01-01

    This viewgraph presentation provides an analysis of long-channel nanotube (NT) field effect transistors (FET) from NASA's Ames Research Center. The structure of such a transistor including the electrode contact, 1D junction, and the planar junction is outlined. Also mentioned are various characteristics of a nanotube tip-equipped scanning tunnel microscope (STM).

  11. Transistor Effect in Improperly Connected Transistors.

    ERIC Educational Resources Information Center

    Luzader, Stephen; Sanchez-Velasco, Eduardo

    1996-01-01

    Discusses the differences between the standard representation and a realistic representation of a transistor. Presents an experiment that helps clarify the explanation of the transistor effect and shows why transistors should be connected properly. (JRH)

  12. Switching Transistor

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Westinghouse Electric Corporation's D60T transistors are used primarily as switching devices for controlling high power in electrical circuits. It enables reduction in the number and size of circuit components and promotes more efficient use of energy. Wide range of application from a popcorn popper to a radio frequency generator for solar cell production.

  13. Principles of an atomtronic transistor

    NASA Astrophysics Data System (ADS)

    Caliga, Seth C.; Straatsma, Cameron J. E.; Zozulya, Alex A.; Anderson, Dana Z.

    2016-01-01

    A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source-gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.

  14. Characteristics of superconducting flux-flow transistors

    SciTech Connect

    Hohenwarter, G.K.G. ); Martens, J.S.; Thompson, J.H.; Beyer, J.B.; Nordman, J.E. . Dept. of Electrical and Computer Engineering); Ginley, D.S. )

    1991-03-01

    This paper compares the operational characteristics and physics of three superconducting thin-film based transistor structures. The devices are based on the motion of quantized vortices, either Josephson fluxons in a long tunnel junction or Abrikosov fluxons in a superconducting film. The transistor amplification mechanism, in all three cases, is accomplished by controlling magnetic field at the boundaries of the structure. This paper provides an overview of present understanding of device mechanisms and of measured characteristics, including voltampere relations and small and large signal circuit parameters. Demonstrated applications and anticipated limitations are discussed.

  15. Nanotube junctions

    DOEpatents

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon; Zettl, Alexander Karlwalte

    2004-12-28

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  16. Nanotube junctions

    DOEpatents

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon Sheng; Zettl, Alexander Karlwalter

    2003-01-01

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  17. Graded junction termination extensions for electronic devices

    NASA Technical Reports Server (NTRS)

    Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

    2007-01-01

    A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

  18. Graded junction termination extensions for electronic devices

    NASA Technical Reports Server (NTRS)

    Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

    2006-01-01

    A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

  19. Transport in Carbon Nanotube Junctions

    NASA Astrophysics Data System (ADS)

    Khoo, K. H.; Chelikowsky, James R.

    2008-03-01

    There is growing interest in the use of carbon nanotube thin films as transparent electrical conductors and thin-film transistors owing to their high optical transmittance, low sheet resistivity, and ease of fabrication. [1,2] A major contribution to the sheet resistivity originates at nanotube junctions, as electrical contact is typically poor between adjacent nanotubes. It is thus important to characterize carbon nanotube junctions in order to understand the conduction properties of nanotube thin films. To this end, we have performed ab initio density functional theory calculations to investigate the structural, electronic and transport properties of carbon nanotube junctions as a function of nanotube chirality and contact geometry [1] Z. Wu et al., Science 305, 1273 (2004) [2] E. S. Snow, J. P. Novak, P. M. Campbell, and D. Park, Appl. Phys. Lett. 82, 2145 (2003).

  20. Graphene-porphyrin single-molecule transistors

    NASA Astrophysics Data System (ADS)

    Mol, Jan A.; Lau, Chit Siong; Lewis, Wilfred J. M.; Sadeghi, Hatef; Roche, Cecile; Cnossen, Arjen; Warner, Jamie H.; Lambert, Colin J.; Anderson, Harry L.; Briggs, G. Andrew D.

    2015-07-01

    We demonstrate a robust graphene-molecule-graphene transistor architecture. We observe remarkably reproducible single electron charging, which we attribute to insensitivity of the molecular junction to the atomic configuration of the graphene electrodes. The stability of the graphene electrodes allow for high-bias transport spectroscopy and the observation of multiple redox states at room-temperature.We demonstrate a robust graphene-molecule-graphene transistor architecture. We observe remarkably reproducible single electron charging, which we attribute to insensitivity of the molecular junction to the atomic configuration of the graphene electrodes. The stability of the graphene electrodes allow for high-bias transport spectroscopy and the observation of multiple redox states at room-temperature. Electronic supplementary information (ESI) available. See DOI: 10.1039/C5NR03294F

  1. Josephson junction

    DOEpatents

    Wendt, Joel R.; Plut, Thomas A.; Martens, Jon S.

    1995-01-01

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material.

  2. Josephson junction

    DOEpatents

    Wendt, J.R.; Plut, T.A.; Martens, J.S.

    1995-05-02

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

  3. Bimetallic junctions

    NASA Technical Reports Server (NTRS)

    Arcella, F. G.; Lessmann, G. G.; Lindberg, R. A. (Inventor)

    1977-01-01

    The formation of voids through interdiffusion in bimetallic welded structures exposed to high operating temperatures is inhibited by utilizing an alloy of the parent materials in the junction of the parent materials or by preannealing the junction at an ultrahigh temperature. These methods are also used to reduce the concentration gradient of a hardening agent.

  4. High Accuracy Transistor Compact Model Calibrations

    SciTech Connect

    Hembree, Charles E.; Mar, Alan; Robertson, Perry J.

    2015-09-01

    Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

  5. Gap Junctions

    PubMed Central

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  6. Radiation effect on silicon transistors in mixed neutrons-gamma environment

    NASA Astrophysics Data System (ADS)

    Assaf, J.; Shweikani, R.; Ghazi, N.

    2014-10-01

    The effects of gamma and neutron irradiations on two different types of transistors, Junction Field Effect Transistor (JFET) and Bipolar Junction Transistor (BJT), were investigated. Irradiation was performed using a Syrian research reactor (RR) (Miniature Neutron Source Reactor (MNSR)) and a gamma source (Co-60 cell). For RR irradiation, MCNP code was used to calculate the absorbed dose received by the transistors. The experimental results showed an overall decrease in the gain factors of the transistors after irradiation, and the JFETs were more resistant to the effects of radiation than BJTs. The effect of RR irradiation was also greater than that of gamma source for the same dose, which could be because neutrons could cause more damage than gamma irradiation.

  7. Development and fabrication of an augmented power transistor

    NASA Technical Reports Server (NTRS)

    Geisler, M. J.; Hill, F. E.; Ostop, J. A.

    1983-01-01

    The development of device design and processing techniques for the fabrication of an augmented power transistor capable of fast switching and high voltage power conversion is discussed. The major device goals sustaining voltages in the range of 800 to 1000 V at 80 A and 50 A, respectively, at a gain of 14. The transistor switching rise and fall times were both to have been less than 0.5 microseconds. The development of a passivating glass technique to shield the device high voltage junction from moisture and ionic contaminants is discussed as well as the development of an isolated package that separates the thermal and electrical interfaces. A new method was found to alloy the transistors to the molybdenum disc at a relatively low temperature. The measured electrical performance compares well with the predicted optimum design specified in the original proposed design. A 40 mm diameter transistor was fabricated with seven times the emitter area of the earlier 23 mm diameter device.

  8. Josephson Junctions Help Measure Resonance And Dispersion

    NASA Technical Reports Server (NTRS)

    Javadi, Hamid H. S.; Mcgrath, William R.; Bumble, Bruce; Leduc, Henry G.

    1994-01-01

    Electrical characteristics of superconducting microstrip transmission lines measured at millimeter and submillimeter wavelengths. Submicron Josephson (super-conductor/insulator/superconductor) junctions used as both voltage-controlled oscillators and detectors to measure frequencies (in range of hundreds of gigahertz) of high-order resonant electromagnetic modes of superconducting microstrip transmission-line resonators. This oscillator/detector approach similar to vacuum-tube grid dip meters and transistor dip meters used to probe resonances at much lower frequencies.

  9. A silicon nanocrystal tunnel field effect transistor

    SciTech Connect

    Harvey-Collard, Patrick; Drouin, Dominique; Pioro-Ladrière, Michel

    2014-05-12

    In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxide and the channel in intrinsic polycrystalline silicon. The absence of doping eliminates the problem of achieving sharp doping profiles at the junctions, which has proven a challenge for large-scale integration and, in principle, allows scaling down the atomic level. The demonstrated ncFET features a 10{sup 4} on/off current ratio at room temperature, a low 30 pA/μm leakage current at a 0.5 V bias, an on-state current on a par with typical all-Si TFETs and bipolar operation with high symmetry. Quantum dot transport spectroscopy is used to assess the band structure and energy levels of the silicon island.

  10. Current-Induced Transistor Sensorics with Electrogenic Cells.

    PubMed

    Fromherz, Peter

    2016-01-01

    The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand-activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned. PMID:27120627

  11. Current-Induced Transistor Sensorics with Electrogenic Cells

    PubMed Central

    Fromherz, Peter

    2016-01-01

    The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand–activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned. PMID:27120627

  12. Copper oxide transistor on copper wire for e-textile

    NASA Astrophysics Data System (ADS)

    Han, Jin-Woo; Meyyappan, M.

    2011-05-01

    A Cu2O-based field effect transistor was fabricated on Cu wire. Thermal oxidation of Cu forms Cu-Cu2O core-shell structure, where the metal-semiconductor Schottky junction was used as a gate barrier with Pt Ohmic contacts for source and drain. The device was coated with polydimethylsiloxane (PDMS) to protect from contamination and demonstrated as a humidity sensor. The cylindrical structure of the Cu wire and the transistor function enable embedding of simple circuits into textile which can potentially offer smart textile for wearable computing, environmental sensing, and monitoring of human vital signs.

  13. Design considerations for the Tandem Junction Solar Cell

    NASA Technical Reports Server (NTRS)

    Matzen, W. T.; Carbajal, B. G.; Hardy, R. W.

    1979-01-01

    Structure and operation of the tandem junction cell (TJC) are described. The impact of using only back contacts is discussed. A model is presented which explains operation of the TJC in terms of transistor action. The model is applied to predict TJC performance as a function of physical parameters.

  14. Gating a single-molecule transistor with individual atoms

    NASA Astrophysics Data System (ADS)

    Martínez-Blanco, Jesús; Nacci, Christophe; Erwin, Steven C.; Kanisawa, Kiyoshi; Locane, Elina; Thomas, Mark; von Oppen, Felix; Brouwer, Piet W.; Fölsch, Stefan

    2015-08-01

    Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is sensitive to single electrons hopping via individual orbitals. Single-electron transport in molecular transistors has been previously studied using top-down approaches to gating, such as lithography and break junctions. But atomically precise control of the gate--which is crucial to transistor action at the smallest size scales--is not possible with these approaches. Here, we used individual charged atoms, manipulated by a scanning tunnelling microscope, to create the electrical gates for a single-molecule transistor. This degree of control allowed us to tune the molecule into the regime of sequential single-electron tunnelling, albeit with a conductance gap more than one order of magnitude larger than observed previously. This unexpected behaviour arises from the existence of two different orientational conformations of the molecule, depending on its charge state. Our results show that strong coupling between these charge and conformational degrees of freedom leads to new behaviour beyond the established picture of single-electron transport in atomic-scale transistors.

  15. Room temperature operational single electron transistor fabricated by focused ion beam deposition

    NASA Astrophysics Data System (ADS)

    Karre, P. Santosh Kumar; Bergstrom, Paul L.; Mallick, Govind; Karna, Shashi P.

    2007-07-01

    We present the fabrication and room temperature operation of single electron transistors using 8nm tungsten islands deposited by focused ion beam deposition technique. The tunnel junctions are fabricated using oxidation of tungsten in peracetic acid. Clear Coulomb oscillations, showing charging and discharging of the nanoislands, are seen at room temperature. The device consists of an array of tunnel junctions; the tunnel resistance of individual tunnel junction of the device is calculated to be as high as 25.13GΩ. The effective capacitance of the array of tunnel junctions was found to be 0.499aF, giving a charging energy of 160.6meV.

  16. From The Lab to The Fab: Transistors to Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Huff, Howard R.

    2003-09-01

    Transistor action was experimentally observed by John Bardeen and Walter Brattain in n-type polycrystalline germanium on December 16, 1947 (and subsequently polycrystalline silicon) as a result of the judicious placement of gold-plated probe tips in nearby single crystal grains of the polycrystalline material (i.e., the point-contact semiconductor amplifier, often referred to as the point-contact transistor).The device configuration exploited the inversion layer as the channel through which most of the emitted (minority) carriers were transported from the emitter to the collector. The point-contact transistor was manufactured for ten years starting in 1951 by the Western Electric Division of AT&T. The a priori tuning of the point-contact transistor parameters, however, was not simple inasmuch as the device was dependent on the detailed surface structure and, therefore, very sensitive to humidity and temperature as well as exhibiting high noise levels. Accordingly, the devices differed significantly in their characteristics and electrical instabilities leading to "burnout" were not uncommon. With the implementation of crystalline semiconductor materials in the early 1950s, however, p-n junction (bulk) transistors began replacing the point-contact transistor, silicon began replacing germanium and the transfer of transistor technology from the lab to the lab accelerated. We shall review the historical route by which single crystalline materials were developed and the accompanying methodologies of transistor fabrication, leading to the onset of the Integrated Circuit (IC) era. Finally, highlights of the early years of the IC era will be reviewed from the 256 bit through the 4M DRAM. Elements of IC scaling and the role of Moore's Law in setting the parameters by which the IC industry's growth was monitored will be discussed.

  17. Vertical organic transistors

    NASA Astrophysics Data System (ADS)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-11-01

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

  18. Noise characteristics of single-walled carbon nanotube network transistors

    NASA Astrophysics Data System (ADS)

    Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

    2008-07-01

    The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors.

  19. Noise characteristics of single-walled carbon nanotube network transistors.

    PubMed

    Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

    2008-07-16

    The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors. PMID:21828739

  20. Physics-based stability analysis of MOS transistors

    NASA Astrophysics Data System (ADS)

    Ferrara, A.; Steeneken, P. G.; Boksteen, B. K.; Heringa, A.; Scholten, A. J.; Schmitz, J.; Hueting, R. J. E.

    2015-11-01

    In this work, a physics-based model is derived based on a linearization procedure for investigating the electrical, thermal and electro-thermal instability of power metal-oxide-semiconductor (MOS) transistors. The proposed model can be easily interfaced with a circuit or device simulator to perform a failure analysis, making it particularly useful for power transistors. Furthermore, it allows mapping the failure points on a three-dimensional (3D) space defined by the gate-width normalized drain current, drain voltage and junction temperature. This leads to the definition of the Safe Operating Volume (SOV), a powerful frame work for making failure predictions and determining the main root of instability (electrical, thermal or electro-thermal) in different bias and operating conditions. A comparison between the modeled and the measured SOV of silicon-on-insulator (SOI) LDMOS transistors is reported to support the validity of the proposed stability analysis.

  1. Experimental results of a vortex flow transistor amplifier

    SciTech Connect

    McGinnis, D.P.; Hohenwarter, G.K.G.; Ketkar, M.; Beyer, J.B.; Nordman, J.E.

    1989-03-01

    A Niobium based superconducting amplifier consisting of a series array of 60 vortex flow transistors (VFT) was fabricated and tested. Each VFT consisted of a long Josephson junction biased in the flux flow state, magnetically coupled to a current carrying control line. The topology of the circuit is based on a distributed amplifier configuration. The transresistance of the amplifier in a 50 Ohm environment for frequencies up to 1 MHz was measured.

  2. Transistor-based interface circuitry

    DOEpatents

    Taubman, Matthew S.

    2004-02-24

    Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

  3. Transistor-based interface circuitry

    DOEpatents

    Taubman, Matthew S.

    2007-02-13

    Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

  4. Preventing Simultaneous Conduction In Switching Transistors

    NASA Technical Reports Server (NTRS)

    Mclyman, William T.

    1990-01-01

    High voltage spikes and electromagnetic interference suppressed. Power-supply circuit including two switching transistors easily modified to prevent simultaneous conduction by both transistors during switching intervals. Diode connected between collector of each transistor and driving circuit for opposite transistor suppresses driving signal to transistor being turned on until transistor being turned off ceases to carry current.

  5. Electronic transport in benzodifuran single-molecule transistors

    NASA Astrophysics Data System (ADS)

    Xiang, An; Li, Hui; Chen, Songjie; Liu, Shi-Xia; Decurtins, Silvio; Bai, Meilin; Hou, Shimin; Liao, Jianhui

    2015-04-01

    Benzodifuran (BDF) single-molecule transistors have been fabricated in electromigration break junctions for electronic measurements. The inelastic electron tunneling spectrum validates that the BDF molecule is the pathway of charge transport. The gating effect is analyzed in the framework of a single-level tunneling model combined with transition voltage spectroscopy (TVS). The analysis reveals that the highest occupied molecular orbital (HOMO) of the thiol-terminated BDF molecule dominates the charge transport through Au-BDF-Au junctions. Moreover, the energy shift of the HOMO caused by the gate voltage is the main reason for conductance modulation. In contrast, the electronic coupling between the BDF molecule and the gold electrodes, which significantly affects the low-bias junction conductance, is only influenced slightly by the applied gate voltage. These findings will help in the design of future molecular electronic devices.Benzodifuran (BDF) single-molecule transistors have been fabricated in electromigration break junctions for electronic measurements. The inelastic electron tunneling spectrum validates that the BDF molecule is the pathway of charge transport. The gating effect is analyzed in the framework of a single-level tunneling model combined with transition voltage spectroscopy (TVS). The analysis reveals that the highest occupied molecular orbital (HOMO) of the thiol-terminated BDF molecule dominates the charge transport through Au-BDF-Au junctions. Moreover, the energy shift of the HOMO caused by the gate voltage is the main reason for conductance modulation. In contrast, the electronic coupling between the BDF molecule and the gold electrodes, which significantly affects the low-bias junction conductance, is only influenced slightly by the applied gate voltage. These findings will help in the design of future molecular electronic devices. Electronic supplementary information (ESI) available: The fabrication procedure for BDF single

  6. Boron nitride housing cools transistors

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Boron nitride ceramic heat sink cools transistors in r-f transmitter and receiver circuits. Heat dissipated by the transistor is conducted by the boron nitride housing to the metal chassis on which it is mounted.

  7. Quantum Thermal Transistor

    NASA Astrophysics Data System (ADS)

    Joulain, Karl; Drevillon, Jérémie; Ezzahri, Younès; Ordonez-Miranda, Jose

    2016-05-01

    We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

  8. Self Contact Organic Transistors

    NASA Astrophysics Data System (ADS)

    Inoue, Jun-ichi; Wada, Hiroshi; Mori, Takehiko

    2010-07-01

    Thin films of various organic semiconductors, such as pentacene, sexithiophene, copper phthalocyanine, and C60, as well as an organic charge-transfer salt (TTF)(TCNQ) [TTF: tetrathiafulvalene; TCNQ: tetracyanoquinodimethane] are laser-irradiated to form conductive films, which are identified by Raman spectroscopy and atomic force microscopy to be carbon. The resulting practically transparent films are as conductive as laser-sintered carbon films and show temperature-independent conductivity. Source and drain electrodes of organic field-effect transistors are patterned by this method; in these “self-contact” transistors, both the active layers and the electrodes are derived from the same organic film. The laser-sintered carbon films are also utilized for organic single-crystal transistors based on rubrene and TCNQ.

  9. Quantum Thermal Transistor.

    PubMed

    Joulain, Karl; Drevillon, Jérémie; Ezzahri, Younès; Ordonez-Miranda, Jose

    2016-05-20

    We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems. PMID:27258859

  10. Interpreting Transistor Noise

    NASA Astrophysics Data System (ADS)

    Pospieszalski, M. W.

    2010-10-01

    The simple noise models of field effect and bipolar transistors reviewed in this article are quite useful in engineering practice, as illustrated by measured and modeled results. The exact and approximate expressions for the noise parameters of FETs and bipolar transistors reveal certain common noise properties and some general noise properties of both devices. The usefulness of these expressions in interpreting the dependence of measured noise parameters on frequency, bias, and temperature and, consequently, in checking of consistency of measured data has been demonstrated.

  11. VOLTAGE-CONTROLLED TRANSISTOR OSCILLATOR

    DOEpatents

    Scheele, P.F.

    1958-09-16

    This patent relates to transistor oscillators and in particular to those transistor oscillators whose frequencies vary according to controlling voltages. A principal feature of the disclosed transistor oscillator circuit resides in the temperature compensation of the frequency modulating stage by the use of a resistorthermistor network. The resistor-thermistor network components are selected to have the network resistance, which is in series with the modulator transistor emitter circuit, vary with temperature to compensate for variation in the parameters of the transistor due to temperature change.

  12. Imaging dissipation and hot spots in carbon nanotube network transistors

    NASA Astrophysics Data System (ADS)

    Estrada, David; Pop, Eric

    2011-02-01

    We use infrared thermometry of carbon nanotube network (CNN) transistors and find the formation of distinct hot spots during operation. However, the average CNN temperature at breakdown is significantly lower than expected from the breakdown of individual nanotubes, suggesting extremely high regions of power dissipation at the CNN junctions. Statistical analysis and comparison with a thermal model allow the estimate of an upper limit for the average tube-tube junction thermal resistance, ˜4.4×1011 K/W (thermal conductance of ˜2.27 pW/K). These results indicate that nanotube junctions have a much greater impact on CNN transport, dissipation, and reliability than extrinsic factors such as low substrate thermal conductivity.

  13. A dc model for power switching transistors suitable for computer-aided design and analysis

    NASA Technical Reports Server (NTRS)

    Wilson, P. M.; George, R. T., Jr.; Owen, H. A.; Wilson, T. G.

    1979-01-01

    A model for bipolar junction power switching transistors whose parameters can be readily obtained by the circuit design engineer, and which can be conveniently incorporated into standard computer-based circuit analysis programs is presented. This formulation results from measurements which may be made with standard laboratory equipment. Measurement procedures, as well as a comparison between actual and computed results, are presented.

  14. A dc model for power switching transistors suitable for computer-aided design and analysis

    NASA Technical Reports Server (NTRS)

    Wilson, P. M.; George, R. T., Jr.; Owen, H. A., Jr.; Wilson, T. G.

    1979-01-01

    The proposed dc model for bipolar junction power switching transistors is based on measurements which may be made with standard laboratory equipment. Those nonlinearities which are of importance to power electronics design are emphasized. Measurements procedures are discussed in detail. A model formulation adapted for use with a computer program is presented, and a comparison between actual and computer-generated results is made.

  15. Analyses of Transistor Punchthrough Failures

    NASA Technical Reports Server (NTRS)

    Nicolas, David P.

    1999-01-01

    The failure of two transistors in the Altitude Switch Assembly for the Solid Rocket Booster followed by two additional failures a year later presented a challenge to failure analysts. These devices had successfully worked for many years on numerous missions. There was no history of failures with this type of device. Extensive checks of the test procedures gave no indication for a source of the cause. The devices were manufactured more than twenty years ago and failure information on this lot date code was not readily available. External visual exam, radiography, PEID, and leak testing were performed with nominal results Electrical testing indicated nearly identical base-emitter and base-collector characteristics (both forward and reverse) with a low resistance short emitter to collector. These characteristics are indicative of a classic failure mechanism called punchthrough. In failure analysis punchthrough refers to an condition where a relatively low voltage pulse causes the device to conduct very hard producing localized areas of thermal runaway or "hot spots". At one or more of these hot spots, the excessive currents melt the silicon. Heavily doped emitter material diffuses through the base region to the collector forming a diffusion pipe shorting the emitter to base to collector. Upon cooling, an alloy junction forms between the pipe and the base region. Generally, the hot spot (punch-through site) is under the bond and no surface artifact is visible. The devices were delidded and the internal structures were examined microscopically. The gold emitter lead was melted on one device, but others had anomalies in the metallization around the in-tact emitter bonds. The SEM examination confirmed some anomalies to be cosmetic defects while other anomalies were artifacts of the punchthrough site. Subsequent to these analyses, the contractor determined that some irregular testing procedures occurred at the time of the failures heretofore unreported. These testing

  16. Studies of silicon p-n junction solar cells

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Lindholm, F. A.

    1979-01-01

    To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

  17. Vertical organic transistors.

    PubMed

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-11-11

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted. PMID:26466388

  18. Radiation-hardened transistor and integrated circuit

    DOEpatents

    Ma, Kwok K.

    2007-11-20

    A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

  19. Noise modeling of microwave heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Escotte, Laurent; Roux, Jean-Phillippe; Plana, Robert; Graffeuil, Jacques; Gruhle, Andreas

    1995-05-01

    Analytical expressions of microwave heterojunction bipolar transistors minimum noise figure and noise parameter are reported in this paper. These expressions are derived from a noise model including nonideal junctions, emitter and base resistances and have been compared with measured data obtained on a Si/SiGe HBT. An agreement between theoretical and experimental data was observed up to 20 GHz for several bias conditions. The limits of the model or the range of validity of the proposed equations have been also examined with the help of an appropriate CAD software. The analysis of the influence of parasitic elements on noise parameters has shown a strong influence of the extrinsic base collector capacitance at microwave frequencies.

  20. Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

    SciTech Connect

    Feng, M.; Iverson, E. W.; Wang, C. Y.; Holonyak, N.

    2015-11-02

    For a direct-gap semiconductor (e.g., a p-n junction), photon-assisted tunneling is known to exhibit a high nonlinear absorption. In a transistor laser, as discussed here, the coherent photons generated at the quantum well interact with the collector junction field and “assist” electron tunneling from base to collector, thus resulting in the nonlinear modulation of the laser and the realization of optical pulse generation. 1 and 2 GHz optical pulses are demonstrated in the transistor laser using collector voltage control.

  1. Experimental Analysis of Proton-Induced Displacement and Ionization Damage Using Gate-Controlled Lateral PNP Bipolar Transistors

    NASA Technical Reports Server (NTRS)

    Ball, D. R.; Schrimpf, R. D.; Barnaby, H. J.

    2006-01-01

    The electrical characteristics of proton-irradiated bipolar transistors are affected by ionization damage to the insulating oxide and displacement damage to the semiconductor bulk. While both types of damage degrade the transistor, it is important to understand the mechanisms individually and to be able to analyze them separately. In this paper, a method for analyzing the effects of ionization and displacement damage using gate-controlled lateral PNP bipolar junction transistors is described. This technique allows the effects of oxide charge, surface recombination velocity, and bulk traps to be measured independently.

  2. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

    PubMed Central

    Martí, A.; Luque, A.

    2015-01-01

    Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions. PMID:25902374

  3. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

    PubMed

    Martí, A; Luque, A

    2015-01-01

    Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions. PMID:25902374

  4. Improved chopper circuit uses parallel transistors

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Parallel transistor chopper circuit operates with one transistor in the forward mode and the other in the inverse mode. By using this method, it acts as a single, symmetrical, bidirectional transistor, and reduces and stabilizes the offset voltage.

  5. Avalanche transistor selection for long term stability in streak camera sweep and pulser applications

    SciTech Connect

    Thomas, S.W.; Griffith, R.L.; Teruya, A.T.

    1990-09-05

    We have identified the Motorola 2N4014 and 2N5551 and the Raytheon RS3944 as three transistor types that exhibit avalanche characteristics and have long term collector breakdown voltage stability superior to other transistors tested. Stability on all types has been improved by power burnin. An automatic avalanche transistor burnin tester has been constructed to allow power burnin of up to 1008 transistors at a time. The tester is controlled by an IBM Personal Computer (PC) and can be programmed to acquire data, unattended, at any desired rate or period. Data are collected from each run and stored on a floppy disk in ASCII format. The data analysis software, RS/1, was used for analysis and display. Data runs were typically 3 to 4 months long, with readings taken weekly. The transistors were biased into the avalanche or Zener region by individual current sources set to about 20% of the self-avalanche current for each type of transistor. Motorola, Zetex and National transistors were operated at 100 microamperes ({mu}A), and the Raytheon units were operated at 20 {mu}A. The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability. 7 refs., 9 figs., 1 tab.

  6. Influence of a perpendicular magnetic field on the thermal depinning of a single Abrikosov vortex in a superconducting Josephson junction

    SciTech Connect

    Kouzoudis, D.

    1999-02-12

    The prime interest of the present research is to measure the thermal energy needed for depinning a trapped vortex when an external magnetic field is perpendicular to the plane of the junction, and thus there are Meissner currents flowing along the edge of the film. These currents introduce an additional force and the author wishes to study thermal depinning under the influence of this force. These studies are of interest because Nb junctions are used in a wide range of electronic applications. Such junctions are useful, for instance, in superconducting quantum interference devices (SQUIDs) or in vortex-flow transistors because their performance can be enhanced by tuning the parameters of the individual junctions to optimum operation values. Furthermore gated Josephson junctions can be used as Josephson field-effect transistors (JOFETs).

  7. Chemoresponsive Monolayer Transistors

    SciTech Connect

    Guo,X.; Myers, M.; Xiao, S.; Lefenfeld, M.; Steiner, R.; Tulevski, G.; Tang, J.; Baumert, J.; Leibfarth, F.; et al.

    2006-01-01

    This work details a method to make efficacious field-effect transistors from monolayers of polycyclic aromatic hydrocarbons that are able to sense and respond to their chemical environment. The molecules used in this study are functionalized so that they assemble laterally into columns and attach themselves to the silicon oxide surface of a silicon wafer. To measure the electrical properties of these monolayers, we use ultrasmall point contacts that are separated by only a few nanometers as the source and drain electrodes. These contacts are formed through an oxidative cutting of an individual metallic single-walled carbon nanotube that is held between macroscopic metal leads. The molecules assemble in the gap and form transistors with large current modulation and high gate efficiency. Because these devices are formed from an individual stack of molecules, their electrical properties change significantly when exposed to electron-deficient molecules such as tetracyanoquinodimethane (TCNQ), forming the basis for new types of environmental and molecular sensors.

  8. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    DOEpatents

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  9. Polarization induced doped transistor

    DOEpatents

    Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  10. Solitons in Josephson junctions

    NASA Astrophysics Data System (ADS)

    Ustinov, A. V.

    1998-11-01

    Magnetic flux quanta in Josephson junctions, often called fluxons, in many cases behave as solitons. A review of recent experiments and modelling of fluxon dynamics in Josephson circuits is presented. Classic quasi-one-dimensional junctions, stacked junctions (Josephson superlattices), and discrete Josephson transmission lines (JTLs) are discussed. Applications of fluxon devices as high-frequency oscillators and digital circuits are also addressed.

  11. Thermal design studies of high-power heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Gao, Guang-Bo; Wang, Ming-Zhu; Gui, Xiang; Morkoc, Hadis

    1989-05-01

    A theoretical thermoelectro-feedback model has been developed for the thermal design of high-power GaAlAs/GaAs heterojunction bipolar transistors (HBTs). The power-handling capability, thermal instability, junction temperature, and current distributions of HBTs with multiple emitter fingers have been numerically studied. The calculated results indicate that power HBTs on Si substrates (or with Si as the collector) have excellent potential power performance and reliability. The power-handling capability on Si is 3.5 and 2.7 times as large as that on GaAs and InP substrates, respectively. The peak junction temperature and temperature difference on the chip decrease in comparison to the commonly used Si homostructure power transistors with the same geometry and power dissipation. Thereby HBTs are promising for high-speed microwave and millimeter-wave applications. It has been also found that the nonuniform distribution of junction temperature and current can be greatly improved by a balasting technique that uses unequal-value emitter resistors.

  12. Superconducting Field-Effect Transistors

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul; Romanofsky, Robert R.; Tabib-Azar, Massood

    1995-01-01

    Devices offer switching speeds greater than semiconducting counterparts. High-Tc superconducting field-effect transistors (SUPEFETs) investigated for use as electronic switches in delay-line-type microwave phase shifters. Resemble semiconductor field-effect transistors in some respects, but their operation based on different principle; namely, electric-field control of transition between superconductivity and normal conductivity.

  13. Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors

    NASA Astrophysics Data System (ADS)

    Schulze, Jörg; Blech, Andreas; Datta, Arnab; Fischer, Inga A.; Hähnel, Daniel; Naasz, Sandra; Rolseth, Erlend; Tropper, Eva-Maria

    2015-08-01

    We present experimental results on the fabrication and characterization of vertical Ge and GeSn heterojunction Tunneling Field Effect Transistors (TFETs). A gate-all-around process with mesa diameters down to 70 nm is used to reduce leakage currents and improve electrostatic control of the gate over the transistor channel. An ION = 88.4 μA/μm at VDS = VG = -2 V is obtained for a TFET with a 10 nm Ge0.92Sn0.08 layer at the source/channel junction. We discuss further possibilities for device improvements.

  14. High resolution thermoreflectance imaging on transistor arrays with defect-induced leakage

    NASA Astrophysics Data System (ADS)

    Tessier, G.; Filloy, C.; Polignano, M. L.; Mica, I.; Jerosolimski, G.; Holé, S.; Fournier, D.

    2005-06-01

    Crystal defects are very harmful in present silicon devices when responsible for a source-to-drain junction piping and hence for a transistor leakage current. These effects are difficult to characterise with existing methods. Two transistor arrays including patterns critical for defect formation have been constructed and then characterised using a multiplexed CCD-based thermoreflectance microscope. Since this technique measures heating associated to defects, it does not discriminate dielectric breakdown and actual source-to-drain leakage. Both types of defects, buried under 6 μm of intermetal and encapsulation dielectric, are clearly detected with a spatial resolution of 350 nm.

  15. Effect of 100MeV oxygen ion irradiation on silicon NPN power transistor

    SciTech Connect

    Kumar, M. Vinay; Krishnakumar, K. S.; Dinesh, C. M.; Krishnaveni, S.; Ramani

    2012-06-05

    The radiation response of npn Bipolar junction transistor (BJT) has been examined for 100 MeV O{sup 7+} ion. Key electrical properties like Gummel characteristics, dc current gain and capacitance-voltage of 100MeV O{sup 7+} ion irradiated transistor were studied before and after irradiation. The device was decapped and the electrical characterizations were performed at room temperature. Base current is observed to be more sensitive than collector current and gain appears to be degraded with ion fluence, also considerable degradation in C-V characteristics is observed and doping concentration is found to be increased along with the increase in ion fluence.

  16. From transistor to nanotube

    NASA Astrophysics Data System (ADS)

    Boudenot, Jean-Claude

    2008-01-01

    We present here the main steps in the evolution of the transistor, since the tremendous invention of such a device and the introduction of the integrated circuit. We will then recall the main steps of Moore's law development. Nanotechnology began at the very beginning of the 21st century. Two aspects are presented in this article: the first, called 'More Moore', consists in continuing the laws of scale up to the physical limits; the second aspect, called 'beyond CMOS' explores new concepts such as spintronics, moletronics, nanotronics and other types of molecular electronics. To cite this article: J.-C. Boudenot, C. R. Physique 9 (2008).

  17. Power transistor switching characterization

    NASA Technical Reports Server (NTRS)

    Blackburn, D. L.

    1981-01-01

    The switching properties of power transistors are investigated. The devices studied were housed in IO-3 cases and were of an n(+)-p-n(-)-n(+) vertical dopant structure. The effects of the magnitude of the reverse-base current and temperature on the reverse-bias second breakdown characteristics are discussed. Brief discussions of device degradation due to second breakdown and of a constant voltage turn-off circuit are included. A description of a vacuum tube voltage clamp circuit which reduces clamped collector voltage overshoot is given.

  18. REGENERATIVE TRANSISTOR AMPLIFIER

    DOEpatents

    Kabell, L.J.

    1958-11-25

    Electrical circults for use in computers and the like are described. particularly a regenerative bistable transistor amplifler which is iurned on by a clock signal when an information signal permits and is turned off by the clock signal. The amplifier porforms the above function with reduced power requirements for the clock signal and circuit operation. The power requirements are reduced in one way by employing transformer coupling which increases the collector circuit efficiency by eliminating the loss of power in the collector load resistor.

  19. Bulk-barrier transistor

    NASA Astrophysics Data System (ADS)

    Mader, H.; Mueller, R.; Beinvogl, W.

    1983-10-01

    Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p structure with a very thin middle layer. The height of the energy barrier, which is adjustable by technological parameters, can be controlled by an external voltage.

  20. The coupled atom transistor.

    PubMed

    Jehl, X; Voisin, B; Roche, B; Dupont-Ferrier, E; De Franceschi, S; Sanquer, M; Cobian, M; Niquet, Y-M; Sklénard, B; Cueto, O; Wacquez, R; Vinet, M

    2015-04-22

    We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport spectroscopy through these donors placed in series is performed both at zero and microwave frequencies. The coherence of the charge transfer between the two donors is probed by Landau-Zener-Stückelberg interferometry. Single-charge transfer at zero bias (electron pumping) has been performed and the crossover between the adiabatic and non-adiabatic regimes is studied. PMID:25783566

  1. The coupled atom transistor

    NASA Astrophysics Data System (ADS)

    Jehl, X.; Voisin, B.; Roche, B.; Dupont-Ferrier, E.; De Franceschi, S.; Sanquer, M.; Cobian, M.; Niquet, Y.-M.; Sklénard, B.; Cueto, O.; Wacquez, R.; Vinet, M.

    2015-04-01

    We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport spectroscopy through these donors placed in series is performed both at zero and microwave frequencies. The coherence of the charge transfer between the two donors is probed by Landau-Zener-Stückelberg interferometry. Single-charge transfer at zero bias (electron pumping) has been performed and the crossover between the adiabatic and non-adiabatic regimes is studied.

  2. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices. PMID:26839956

  3. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors

    SciTech Connect

    Le, Son T.; Jannaty, P.; Luo, Xu; Zaslavsky, A.; Perea, Daniel E.; Dayeh, Shadi A.; Picraux, Samuel T.

    2012-10-31

    We present silicon-compatible tri-gated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high ION ~ 2 µA/µm, fully suppressed ambipolarity, and a sub-threshold slope SS ~ 140 mV/decade over 4 decades of current with lowest SS ~ 50 mV/decade. Device operation in the tunneling mode is confirmed by three-dimensional TCAD simulation. Interestingly, in addition to the TFET mode, our devices work as standard nanowire FETs with good ION/IOFF ratio when the source-drain junction is forward-biased. The improved transport in both biasing modes confirms the benefits of utilizing bandgap engineered axial nanowires for enhancing device performance.

  4. Microwave field effect transistor

    NASA Technical Reports Server (NTRS)

    Huang, Ho-Chung (Inventor)

    1989-01-01

    Electrodes of a high power, microwave field effect transistor are substantially matched to external input and output networks. The field effect transistor includes a metal ground plane layer, a dielectric layer on the ground plane layer, a gallium arsenide active region on the dielectric layer, and substantially coplanar spaced source, gate, and drain electrodes having active segments covering the active region. The active segment of the gate electrode is located between edges of the active segments of the source and drain electrodes. The gate and drain electrodes include inactive pads remote from the active segments. The pads are connected directly to the input and output networks. The source electrode is connected to the ground plane layer. The space between the electrodes and the geometry of the electrodes extablish parasitic shunt capacitances and series inductances that provide substantial matches between the input network and the gate electrode and between the output network and the drain electrode. Many of the devices are connected in parallel and share a common active region, so that each pair of adjacent devices shares the same source electrodes and each pair of adjacent devices shares the same drain electrodes. The gate electrodes for the parallel devices are formed by a continuous stripe that extends between adjacent devices and is connected at different points to the common gate pad.

  5. Monolithic metal oxide transistors.

    PubMed

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics. PMID:25777338

  6. Chemoresponsive monolayer transistors

    PubMed Central

    Guo, Xuefeng; Myers, Matthew; Xiao, Shengxiong; Lefenfeld, Michael; Steiner, Rachel; Tulevski, George S.; Tang, Jinyao; Baumert, Julian; Leibfarth, Frank; Yardley, James T.; Steigerwald, Michael L.; Kim, Philip; Nuckolls, Colin

    2006-01-01

    This work details a method to make efficacious field-effect transistors from monolayers of polycyclic aromatic hydrocarbons that are able to sense and respond to their chemical environment. The molecules used in this study are functionalized so that they assemble laterally into columns and attach themselves to the silicon oxide surface of a silicon wafer. To measure the electrical properties of these monolayers, we use ultrasmall point contacts that are separated by only a few nanometers as the source and drain electrodes. These contacts are formed through an oxidative cutting of an individual metallic single-walled carbon nanotube that is held between macroscopic metal leads. The molecules assemble in the gap and form transistors with large current modulation and high gate efficiency. Because these devices are formed from an individual stack of molecules, their electrical properties change significantly when exposed to electron-deficient molecules such as tetracyanoquinodimethane (TCNQ), forming the basis for new types of environmental and molecular sensors. PMID:16855049

  7. Physical limits of silicon transistors and circuits

    NASA Astrophysics Data System (ADS)

    Keyes, Robert W.

    2005-12-01

    A discussion on transistors and electronic computing including some history introduces semiconductor devices and the motivation for miniaturization of transistors. The changing physics of field-effect transistors and ways to mitigate the deterioration in performance caused by the changes follows. The limits of transistors are tied to the requirements of the chips that carry them and the difficulties of fabricating very small structures. Some concluding remarks about transistors and limits are presented.

  8. Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process

    NASA Astrophysics Data System (ADS)

    Gotoh, Yoshitaka; Matsumoto, Kazuhiko; Bubanja, Vladimir; Vazquez, Francisco; Maeda, Tatsuro; Harris, James S.

    2000-04-01

    A planar-type single electron transistor (SET) was fabricated by the atomic force microscopy (AFM) nano-oxidation process. The fabricated SET showed the Coulomb oscillation characteristic with the period of about 2 V at room temperature. From the three-dimensional simulation, it is found out that the smaller the SET island size, the smaller the tunnel junction capacitance, and the tunnel junction capacitance shows a weak dependence on the tunnel junction width. Using the analytical model, the reason for this weak dependence was clarified.

  9. Chemical control over the energy-level alignment in a two-terminal junction

    NASA Astrophysics Data System (ADS)

    Yuan, Li; Franco, Carlos; Crivillers, Núria; Mas-Torrent, Marta; Cao, Liang; Sangeeth, C. S. Suchand; Rovira, Concepció; Veciana, Jaume; Nijhuis, Christian A.

    2016-07-01

    The energy-level alignment of molecular transistors can be controlled by external gating to move molecular orbitals with respect to the Fermi levels of the source and drain electrodes. Two-terminal molecular tunnelling junctions, however, lack a gate electrode and suffer from Fermi-level pinning, making it difficult to control the energy-level alignment of the system. Here we report an enhancement of 2 orders of magnitude of the tunnelling current in a two-terminal junction via chemical molecular orbital control, changing chemically the molecular component between a stable radical and its non-radical form without altering the supramolecular structure of the junction. Our findings demonstrate that the energy-level alignment in self-assembled monolayer-based junctions can be regulated by purely chemical modifications, which seems an attractive alternative to control the electrical properties of two-terminal junctions.

  10. Chemical control over the energy-level alignment in a two-terminal junction

    PubMed Central

    Yuan, Li; Franco, Carlos; Crivillers, Núria; Mas-Torrent, Marta; Cao, Liang; Sangeeth, C. S. Suchand; Rovira, Concepció; Veciana, Jaume; Nijhuis, Christian A.

    2016-01-01

    The energy-level alignment of molecular transistors can be controlled by external gating to move molecular orbitals with respect to the Fermi levels of the source and drain electrodes. Two-terminal molecular tunnelling junctions, however, lack a gate electrode and suffer from Fermi-level pinning, making it difficult to control the energy-level alignment of the system. Here we report an enhancement of 2 orders of magnitude of the tunnelling current in a two-terminal junction via chemical molecular orbital control, changing chemically the molecular component between a stable radical and its non-radical form without altering the supramolecular structure of the junction. Our findings demonstrate that the energy-level alignment in self-assembled monolayer-based junctions can be regulated by purely chemical modifications, which seems an attractive alternative to control the electrical properties of two-terminal junctions. PMID:27456200

  11. Chemical control over the energy-level alignment in a two-terminal junction.

    PubMed

    Yuan, Li; Franco, Carlos; Crivillers, Núria; Mas-Torrent, Marta; Cao, Liang; Sangeeth, C S Suchand; Rovira, Concepció; Veciana, Jaume; Nijhuis, Christian A

    2016-01-01

    The energy-level alignment of molecular transistors can be controlled by external gating to move molecular orbitals with respect to the Fermi levels of the source and drain electrodes. Two-terminal molecular tunnelling junctions, however, lack a gate electrode and suffer from Fermi-level pinning, making it difficult to control the energy-level alignment of the system. Here we report an enhancement of 2 orders of magnitude of the tunnelling current in a two-terminal junction via chemical molecular orbital control, changing chemically the molecular component between a stable radical and its non-radical form without altering the supramolecular structure of the junction. Our findings demonstrate that the energy-level alignment in self-assembled monolayer-based junctions can be regulated by purely chemical modifications, which seems an attractive alternative to control the electrical properties of two-terminal junctions. PMID:27456200

  12. Spin transistor based on cadmium fluoride nanostructures

    SciTech Connect

    Bagraev, N. T. Gimbitskaya, O. N.; Klyachkin, L. E.; Malyarenko, A. M.; Shelykh, I. A.; Ryskin, A. I.; Shcheulin, A. S.

    2009-01-15

    A study of CdB{sub x}F{sub 2-x}/p-CdF{sub 2}/CdB{sub x}F{sub 2-x} planar sandwich structures fabricated on n-CdF{sub 2} crystal surface was carried out in order to obtain the spin-transistor effect at room temperature. Features related to the band gap of CdF{sub 2} (7.8 eV) along with those related to the spectrum for two-dimensional (2D) hole subbands in p-CdF{sub 2} quantum well (QW) were observed in the current-voltage characteristics for ultrashallow p{sup +}-n junctions. The results obtained demonstrate the important role for 2D hole subbands in the mechanism of the 'proximity effect' that appears due to Andreev's reflection in sandwich structures consisting of a narrow QW confined between superconducting barriers. Resonance behavior for the longitudinal voltage in a weak magnetic field normal to the plane of the p-CdF{sub 2} QW gives evidence for high degree of spin polarization for 2D holes. Analysis of the dependences for the 2D-hole-gas conductance on the magnitude and direction of the magnetic field normal to the plane of the p-CdF{sub 2} QW reveals anti-crossings for Zeeman sublevels in the singlet ground state and triplet excited state of boron dipole centers, responsible for the spin polarization of 2D holes in edge channels in the p-CdF{sub 2} QW. The high degree of spin polarization for 2D holes in edge channels in the p-CdF{sub 2} QW identifies the mechanism underlying spin-transistor I-V characteristics observed upon the variation of the gate voltage, which controls the magnitude of Bychkov-Rashba's spin-orbit coupling.

  13. Contact electrification field-effect transistor.

    PubMed

    Zhang, Chi; Tang, Wei; Zhang, Limin; Han, Changbao; Wang, Zhong Lin

    2014-08-26

    Utilizing the coupled metal oxide semiconductor field-effect transistor and triboelectric nanogenerator, we demonstrate an external force triggered/controlled contact electrification field-effect transistor (CE-FET), in which an electrostatic potential across the gate and source is created by a vertical contact electrification between the gate material and a “foreign” object, and the carrier transport between drain and source can be tuned/controlled by the contact-induced electrostatic potential instead of the traditional gate voltage. With the two contacted frictional layers vertically separated by 80 μm, the drain current is decreased from 13.4 to 1.9 μA in depletion mode and increased from 2.4 to 12.1 μA in enhancement mode at a drain voltage of 5 V. Compared with the piezotronic devices that are controlled by the strain-induced piezoelectric polarization charged at an interface/junction, the CE-FET has greatly expanded the sensing range and choices of materials in conjunction with semiconductors. The CE-FET is likely to have important applications in sensors, human–silicon technology interfacing, MEMS, nanorobotics, and active flexible electronics. Based on the basic principle of the CE-FET, a field of tribotronics is proposed for devices fabricated using the electrostatic potential created by triboelectrification as a “gate” voltage to tune/control charge carrier transport in conventional semiconductor devices. By the three-way coupling among triboelectricity, semiconductor, and photoexcitation, plenty of potentially important research fields are expected to be explored in the near future. PMID:25119657

  14. Non-hysteretic superconducting quantum interference proximity transistor with enhanced responsivity

    SciTech Connect

    Jabdaraghi, R. N.; Meschke, M.; Pekola, J. P.

    2014-02-24

    This Letter presents fabrication and characterization of an optimized superconducting quantum interference proximity transistor. The present device, characterized by reduced tunnel junction area and shortened normal-metal section, demonstrates no hysteresis at low temperatures as we increased the Josephson inductance of the weak link by decreasing its cross section. It has consequently almost an order of magnitude improved magnetic field responsivity as compared to the earlier design. The modulation of both the current and the voltage across the junction have been measured as a function of magnetic flux piercing the superconducting loop.

  15. Transistorized converter provides nondissipative regulation

    NASA Technical Reports Server (NTRS)

    1964-01-01

    A transistorized regulator converter efficiently converts fluctuating input voltages to a constant output voltage, avoiding the use of saturable reactors. It is nondissipative in operation and functions in an open loop through variable duty cycles.

  16. High transconductance organic electrochemical transistors

    PubMed Central

    Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

    2013-01-01

    The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

  17. Solder Bonding for Power Transistors

    NASA Technical Reports Server (NTRS)

    Snytsheuvel, H. A.; Mandel, H.

    1985-01-01

    Indium solder boosts power rating and facilitates circuit changes. Efficient heat conduction from power transistor to heat sink provided by layer of indium solder. Low melting point of indium solder (141 degrees C) allows power transistor to be removed, if circuit must be reworked, without disturbing other components mounted with ordinary solder that melts at 181 degrees C. Solder allows devices operated at higher power levels than does conventional attachment by screws.

  18. Three-junction solar cell

    DOEpatents

    Ludowise, Michael J.

    1986-01-01

    A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

  19. Evolvable circuit with transistor-level reconfigurability

    NASA Technical Reports Server (NTRS)

    Stoica, Adrian (Inventor); Salazar-Lazaro, Carlos Harold (Inventor)

    2004-01-01

    An evolvable circuit includes a plurality of reconfigurable switches, a plurality of transistors within a region of the circuit, the plurality of transistors having terminals, the plurality of transistors being coupled between a power source terminal and a power sink terminal so as to be capable of admitting power between the power source terminal and the power sink terminal, the plurality of transistors being coupled so that every transistor terminal to transistor terminal coupling within the region of the circuit comprises a reconfigurable switch.

  20. Single-Electron Transistors

    NASA Astrophysics Data System (ADS)

    Fulton, T. A.

    2000-03-01

    Subsequent to the early work, the basic all-metal single-electron transistor (SET) and its semiconductor counterparts have become widely studied, both for their own behavior and for applications. For many people, the SET is an everyday research tool whose inner workings, even though they depend on charge quantization and the energy-time uncertainty principle, can readily be understood (given electron tunneling) by simple arguments based on elementary circuit models. Our own further studies, in various collaborations, were first concerned with finding and studying interactions between charging effects and Josephson tunneling in SET circuits, which had been the original motivation. Later, looking into applications for SETs, we demonstrated a crude but recognizable form of single-electron memory. Significant digital-circuit applications of SETs still seem remote, alas, but some analog applications are promising. Recently, in an ongoing collaboration, we have fabricated an SET on the tip of a tapered glass fiber for use as a scanning probe. With it, we have mapped the electric fields over a two-dimensional electron gas having a density, n, that varies with position. In the quantum Hall regime, step-like changes in surface potential are seen along lines where n corresponds to an integer filling factor ("edge-state regions"). Currently, we are investigating certain sub-micrometer structures, which sometimes form small networks, that appear in these regions. This structure seems to involve localization of individual electrons. note

  1. Doped semiconductor nanocrystal junctions

    NASA Astrophysics Data System (ADS)

    Borowik, Ł.; Nguyen-Tran, T.; Roca i Cabarrocas, P.; Mélin, T.

    2013-11-01

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND≈1020-1021cm-3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as ND-1/3, and depleted charge linearly increasing with the NC diameter and varying as ND1/3. We thus establish a "nanocrystal counterpart" of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  2. Passivated ambipolar black phosphorus transistors

    NASA Astrophysics Data System (ADS)

    Yue, Dewu; Lee, Daeyeong; Jang, Young Dae; Choi, Min Sup; Nam, Hye Jin; Jung, Duk-Young; Yoo, Won Jong

    2016-06-01

    We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ~83 cm2 V-1 s-1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ~10 nm thick BP flake was used.We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ~83 cm2 V-1 s-1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ~10 nm thick BP flake was used. Electronic supplementary information (ESI) available: Transfer characteristics of BP field effect transistors (BV1-BV4) (Fig. S1 and S2 and Table S1); output characteristics of BP field effect transistors in different directions (Fig. S3

  3. Metallic Electrode: Semiconducting Nanotube Junction Model

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryon (Technical Monitor)

    2001-01-01

    A model is proposed for two observed current-voltage (I-V) patterns in an experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 ('97)]. We claim that there are two contact modes for a tip (metal) -nanotube semi conductor) junction depending whether the alignment of the metal and semiconductor band structure is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this picture to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor (Zhou et al., Appl. Phys. Lett. 76, 1597 ('00)], and show that two independent metal-semiconductor junctions connected in series are responsible for the observed behavior.

  4. Quantum junction solar cells.

    PubMed

    Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. PMID:22881834

  5. Passivated ambipolar black phosphorus transistors.

    PubMed

    Yue, Dewu; Lee, Daeyeong; Jang, Young Dae; Choi, Min Sup; Nam, Hye Jin; Jung, Duk-Young; Yoo, Won Jong

    2016-07-01

    We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ∼83 cm(2) V(-1) s(-1) from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ∼10 nm thick BP flake was used. PMID:27283027

  6. High current gain transistor laser.

    PubMed

    Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

    2016-01-01

    A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge. PMID:27282466

  7. High current gain transistor laser

    NASA Astrophysics Data System (ADS)

    Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

    2016-06-01

    A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge.

  8. High current gain transistor laser

    PubMed Central

    Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

    2016-01-01

    A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge. PMID:27282466

  9. Band-to-band tunneling field effect transistor for low power logic and memory applications: Design, fabrication and characterization

    NASA Astrophysics Data System (ADS)

    Mookerjea, Saurabh A.

    Over the past decade the microprocessor clock frequency has hit a plateau. The main reason for this has been the inability to follow constant electric field scaling, which requires the transistor supply voltage to be scaled down as the transistor dimensions are reduced. Scaling the supply voltage down reduces the dynamic power quadratically but increases the static leakage power exponentially due to non-scalability of threshold voltage of the transistor, which is required to maintain the same ON state performance. This limitation in supply voltage scaling is directly related to MOSFET's (Metal Oxide Semiconductor Field Effect Transistor) sub-threshold slope (SS) limitation of 60 mV/dec at room temperature. Thus novel device design/materials are required that would allow the transistor to switch with sub-threshold slopes steeper than 60 mV/dec at room temperature, thus facilitating supply voltage scaling. Recently, a new class of devices known as super-steep slope (SS<60 mV/dec) transistors are under intense research for its potential to replace the ubiquitous MOSFET. The focus of this dissertation is on the design, fabrication and characterization of band-to-band tunneling field effect transistor (TFET) which belongs to the family of steep slope transistors. TFET with a gate modulated zener tunnel junction at the source allows sub-kT/q (sub-60 mV/dec at room temperature) sub-threshold slope (SS) device operation over a certain gate bias range near the off-state. This allows TFET to achieve much higher I ON-IOFF ratio over a specified gate voltage swing compared to MOSFETs, thus enabling aggressive supply voltage scaling for low power logic operation without impacting its ON-OFF current ratio. This dissertation presents the operating principle of TFET, the material selection strategy and device design for TFET fabrication. This is followed by a novel 6T SRAM design which circumvents the issue of unidirectional conduction in TFET. The switching behavior of TFET is

  10. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    PubMed

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines. PMID:25763152

  11. Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

    NASA Astrophysics Data System (ADS)

    Nakaharai, Shu; Iijima, Tomohiko; Ogawa, Shinichi; Miyazaki, Hisao; Li, Songlin; Tsukagoshi, Kazuhito; Sato, Shintaro; Yokoyama, Naoki

    2012-01-01

    A graphene P-I-N junction switching device with a nanoribbon is proposed, which was aimed at finding an optimized operation scheme for graphene transistors. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top gate, and these two regions are separated by a nanoribbon that works as an insulator, resulting in a junction configuration of (P or N)-I-(P or N). It is demonstrated that the drain current modulation strongly depends on the junction configuration, while the nanoribbon is not directly top-gated, and that the device with a P-I-N or N-I-P junction can exhibit better switching properties.

  12. Programmable, automated transistor test system

    NASA Technical Reports Server (NTRS)

    Truong, L. V.; Sundburg, G. R.

    1986-01-01

    A programmable, automated transistor test system was built to supply experimental data on new and advanced power semiconductors. The data will be used for analytical models and by engineers in designing space and aircraft electric power systems. A pulsed power technique was used at low duty cycles in a nondestructive test to examine the dynamic switching characteristic curves of power transistors in the 500 to 1000 V, 10 to 100 A range. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software.

  13. Silicon on insulator self-aligned transistors

    DOEpatents

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  14. Analysing organic transistors based on interface approximation

    SciTech Connect

    Akiyama, Yuto; Mori, Takehiko

    2014-01-15

    Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region.

  15. Four-junction superconducting circuit.

    PubMed

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J Q

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  16. Four-junction superconducting circuit

    NASA Astrophysics Data System (ADS)

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-06-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit.

  17. Four-junction superconducting circuit

    PubMed Central

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  18. Black phosphorus nonvolatile transistor memory.

    PubMed

    Lee, Dain; Choi, Yongsuk; Hwang, Euyheon; Kang, Moon Sung; Lee, Seungwoo; Cho, Jeong Ho

    2016-04-28

    We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (10(4) s), and cyclic endurance (1000 cycles). PMID:27074903

  19. The four-gate transistor

    NASA Technical Reports Server (NTRS)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  20. T-Junction Benchmark

    SciTech Connect

    2010-01-01

    Part 1: Two different volume renderings of fluid temperatures in a turbulent T-junction mixing problem at Reynolds number Re=40,000. Part 2: Volume rendering of fluid temperatures in a turbulent T-junction mixing problem at Reynolds number Re=40,000, simulated using Nek5000 at three different resolutions. Part 3: Temperature distribution for a turbulent T-junction mixing problem at Reynolds number Re=40,000, simulated using Nek5000 with 89056 spectral elements of order N=9 (65 million grid points). Credits: Science: Aleks Obabko and Paul Fisher, Argonne National Laboratory
 Visualization: Hank Childs, Lawrence Berkeley National Laboratory

 This research used resources of the Argonne Leadership Computing Facility at Argonne National Laboratory, which is supported by the Office of Science of the U.S. Department of Energy under contract DE-AC02-06CH11357

  1. Monte Carlo calculations for metal-semiconductor hot-electron injection via tunnel-junction emission

    NASA Astrophysics Data System (ADS)

    Appelbaum, Ian; Narayanamurti, V.

    2005-01-01

    We present a detailed description of a scheme to calculate the injection current for metal-semiconductor systems using tunnel-junction electron emission. We employ a Monte Carlo framework for integrating over initial free-electron states in a metallic emitter and use interfacial scattering at the metal-semiconductor interface as an independent parameter. These results have implications for modeling metal-base transistors and ballistic electron emission microscopy and spectroscopy.

  2. A Single-Material Logical Junction Based on 2D Crystal PdS2.

    PubMed

    Ghorbani-Asl, Mahdi; Kuc, Agnieszka; Miró, Pere; Heine, Thomas

    2016-02-01

    A single-material logical junction with negligible contact resistance is designed by exploiting quantum-confinement effects in 1T PdS2 . The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor. PMID:26632273

  3. Charge transport in nanoscale junctions.

    PubMed

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-01

    many particle excitations, new surface states in semiconductor electrodes, various mechanisms for single molecule rectification of the current, inelastic electron spectra and SERS spectroscopy. Three terminal architectures allowing (electrochemical) gating and transistor effects. Electrochemical nanojunctions and gating: intermolecular electron transfer in multi-redox metalloproteins, contact force modulation, characteristic current-noise patterns due to conformational fluctuations, resonance effects and electrocatalysis. Novel architectures: linear coupled quantum-dot-bridged junctions, electrochemical redox mediated transfer in two center systems leading to double maxima current-voltage plots and negative differential resistance, molecular-nanoparticle hybrid junctions and unexpected mesoscopic effects in polymeric wires. Device integration: techniques for creating stable metal/molecule/metal junctions using 'nano-alligator clips' and integration with 'traditional' silicon-based technology. The Guest Editors would like to thank all of the authors and referees of this special issue for their meticulous work in making each paper a valuable contribution to this research area, the early-bird authors for their patience, and Journal of Physics: Condensed Matter editorial staff in Bristol for their continuous support. PMID:21694407

  4. Hardening measures for bipolar transistors against microwave-induced damage

    NASA Astrophysics Data System (ADS)

    Chai, Chang-Chun; Ma, Zhen-Yang; Ren, Xing-Rong; Yang, Yin-Tang; Zhao, Ying-Bo; Yu, Xin-Hai

    2013-06-01

    In the present paper we study the influences of the bias voltage and the external components on the damage progress of a bipolar transistor induced by high-power microwaves. The mechanism is presented by analyzing the variation in the internal distribution of the temperature in the device. The findings show that the device becomes less vulnerable to damage with an increase in bias voltage. Both the series diode at the base and the relatively low series resistance at the emitter, Re, can obviously prolong the burnout time of the device. However, Re will aid damage to the device when the value is sufficiently high due to the fact that the highest hot spot shifts from the base-emitter junction to the base region. Moreover, the series resistance at the base Rb will weaken the capability of the device to withstand microwave damage.

  5. Understanding electronic structure and transport properties in nanoscale junctions

    NASA Astrophysics Data System (ADS)

    Dhungana, Kamal B.

    Understanding the electronic structure and the transport properties of nanoscale materials are pivotal for designing future nano-scale electronic devices. Nanoscale materials could be individual or groups of molecules, nanotubes, semiconducting quantum dots, and biomolecules. Among these several alternatives, organic molecules are very promising and the field of molecular electronics has progressed significantly over the past few decades. Despite these progresses, it has not yet been possible to achieve atomic level control at the metal-molecule interface during a conductance measurement, which hinders the progress in this field. The lack of atomic level information of the interface also makes it much harder for theorist to interpret the experimental results. To identify the junction configuration that possibly exists during the experimental measurement of conductance in molecular junction, we created an ensemble of Ruthanium-bis(terpyridine) molecular devices, and studied the transport behavior in these molecular junctions. This helps us identifying the junction geometry that yields the experimentally measured current-voltage characteristics. Today's electronic devices mostly ignore the spin effect of an electron. The inclusion of spin effect of an electron on solid-state transistor allows us to build more efficient electronic devices; this also alleviates the problem of huge heat dissipation in the nanoscale electronic devices. Different materials have been utilized to build three terminals spin transistor since its inception in 1950. In search of suitable candidates for the molecular spin transistor, we have recently designed a spin-valve transistor based on an organometallic molecule; a large amplification (320 %) in tunnel magneto-resistance (TMR) is found to occur at an experimentally accessible gate field. This suggests that the organic molecules can be utilized for making the next generation three terminal spintronic devices. Similarly, we have designed a

  6. Victory Junction Gang Camp

    ERIC Educational Resources Information Center

    Shell, Ryan

    2007-01-01

    This article describes the Victory Junction Gang Camp, a not-for-profit, NASCAR-themed camp for children with chronic medical conditions that serves 24 different disease groups. The mission of the camp is to give children life-changing camping experiences that are exciting, fun, and empowering in a safe and medically sound environment. While doing…

  7. Josephson junction mixing.

    NASA Technical Reports Server (NTRS)

    Thompson, E. D.

    1973-01-01

    A theory is presented which, though too simple to explain quantitative details in the Josephson junction mixing response, is sufficient for explaining qualitatively the results observed. Crucial to the theory presented, and that which differentiates it from earlier ones, is the inclusion of harmonic voltages across the ideal Josephson element.

  8. Squeezable electron tunneling junctions

    NASA Astrophysics Data System (ADS)

    Moreland, J.; Alexander, S.; Cox, M.; Sonnenfeld, R.; Hansma, P. K.

    1983-09-01

    We report a versatile new technique for constructing electron tunneling junctions with mechanically-adjusted artificial barriers. I-V curves are presented for tunneling between Ag electrodes with vacuum, gas, liquid or solid in the barrier. An energy gap is apparent in the measured I-V curve when tunneling occurs between superconducting Pb electrodes.

  9. Doped semiconductor nanocrystal junctions

    SciTech Connect

    Borowik, Ł.; Mélin, T.; Nguyen-Tran, T.; Roca i Cabarrocas, P.

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  10. Brain barriers: Crosstalk between complex tight junctions and adherens junctions

    PubMed Central

    Tietz, Silvia

    2015-01-01

    Unique intercellular junctional complexes between the central nervous system (CNS) microvascular endothelial cells and the choroid plexus epithelial cells form the endothelial blood–brain barrier (BBB) and the epithelial blood–cerebrospinal fluid barrier (BCSFB), respectively. These barriers inhibit paracellular diffusion, thereby protecting the CNS from fluctuations in the blood. Studies of brain barrier integrity during development, normal physiology, and disease have focused on BBB and BCSFB tight junctions but not the corresponding endothelial and epithelial adherens junctions. The crosstalk between adherens junctions and tight junctions in maintaining barrier integrity is an understudied area that may represent a promising target for influencing brain barrier function. PMID:26008742

  11. Electronic Model of a Ferroelectric Field Effect Transistor

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat Duen; Russell, Larry (Technical Monitor)

    2001-01-01

    A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

  12. Highly flexible electronics from scalable vertical thin film transistors.

    PubMed

    Liu, Yuan; Zhou, Hailong; Cheng, Rui; Yu, Woojong; Huang, Yu; Duan, Xiangfeng

    2014-03-12

    Flexible thin-film transistors (TFTs) are of central importance for diverse electronic and particularly macroelectronic applications. The current TFTs using organic or inorganic thin film semiconductors are usually limited by either poor electrical performance or insufficient mechanical flexibility. Here, we report a new design of highly flexible vertical TFTs (VTFTs) with superior electrical performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 10(5). The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. With large area graphene and IGZO thin film available, our strategy is intrinsically scalable for large scale integration of VTFT arrays and logic circuits, opening up a new pathway to highly flexible macroelectronics. PMID:24502192

  13. Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith Roger D.; Ferrier, Terry L.; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

  14. Metamorphosis of the transistor into a laser

    NASA Astrophysics Data System (ADS)

    Feng, M.; Holonyak, N., Jr.

    2015-01-01

    Based on the invention and operation of the transistor, the alloy diode laser, the quantum-well diode laser and the high-speed heterojunction bipolar transistor (HBT), we have invented and realized now a transistor laser (TL). The transistor laser is a three-terminal technology providing coupling and the coherent light emission in the transistor. The quantum-well (QW) heterojunction bipolar transistor laser, inherently a fast switching device, operates by transporting a small minority base charge density ˜1016 \\text{cm}-3 over a nanoscale base thickness (<900 \\text{A}) in picoseconds. The TL, owing to its fast recombination speed, its unique three-terminal configuration, and complementary nature of its optical and electrical collector output signals, enables resonance-free base current and collector voltage modulation. It is a compact source of electro-optical applications such as nonlinear signal mixing, frequency multiplication, negative feedback, and optoelectronics logic gates.

  15. Black phosphorus nonvolatile transistor memory

    NASA Astrophysics Data System (ADS)

    Lee, Dain; Choi, Yongsuk; Hwang, Euyheon; Kang, Moon Sung; Lee, Seungwoo; Cho, Jeong Ho

    2016-04-01

    We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles).We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles). Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02078j

  16. Coaxial inverted geometry transistor having buried emitter

    NASA Technical Reports Server (NTRS)

    Hruby, R. J.; Cress, S. B.; Dunn, W. R. (Inventor)

    1973-01-01

    The invention relates to an inverted geometry transistor wherein the emitter is buried within the substrate. The transistor can be fabricated as a part of a monolithic integrated circuit and is particularly suited for use in applications where it is desired to employ low actuating voltages. The transistor may employ the same doping levels in the collector and emitter, so these connections can be reversed.

  17. Single-transistor-clocked flip-flop

    DOEpatents

    Zhao, Peiyi; Darwish, Tarek; Bayoumi, Magdy

    2005-08-30

    The invention provides a low power, high performance flip-flop. The flip-flop uses only one clocked transistor. The single clocked transistor is shared by the first and second branches of the device. A pulse generator produces a clock pulse to trigger the flip-flop. In one preferred embodiment the device can be made as a static explicit pulsed flip-flop which employs only two clocked transistors.

  18. A graphene-based hot electron transistor.

    PubMed

    Vaziri, Sam; Lupina, Grzegorz; Henkel, Christoph; Smith, Anderson D; Ostling, Mikael; Dabrowski, Jarek; Lippert, Gunther; Mehr, Wolfgang; Lemme, Max C

    2013-04-10

    We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 10(4). PMID:23488893

  19. Nanoscale Magnetic Materials for Energy-Efficient Spin Based Transistors

    NASA Astrophysics Data System (ADS)

    Incorvia, Jean Anne Currivan

    In this dissertation, I study the physical behavior of nanoscale magnetic materials and build spin-based transistors that encode information in magnetic domain walls. It can be argued that energy dissipation is the most serious problem in modern electronics, and one that has been resistant to a breakthrough. Wasted heat during computing both wastes energy and hinders further technology scaling. This is an opportunity for physicists and engineers to come up with creative solutions for more energy-efficient computing. I present the device we have designed, called domain wall logic (DW-Logic). Information is stored in the position of a magnetic domain wall in a ferromagnetic wire and read out using a magnetic tunnel junction. This hybrid design uses electrical current as the input and output, keeping the device compatible with charge- based transistors. I build an iterative model to predict both the micromagnetic and circuit behavior of DW- Logic, showing a single device can operate as a universal gate. The model shows we can build complex circuits including an 18-gate Full Adder, and allows us to predict the device switching energy compared to complementary metal-oxide semiconductor (CMOS) transistors. Comparing ?15 nm feature nodes, I find DW-Logic made with perpendicular magnetic anisotropy materials, and utilizing both spin torque transfer and the Spin Hall effect, could operate with 1000x reduced switching energy compared to CMOS. I fabricate DW-Logic device prototypes and show in experiment they can act as AND and NAND gates. I demonstrate that one device can drive two subsequent devices, showing gain, which is a necessary requirement for fanout. I also build a clocked ring oscillator circuit to demonstrate successful bit propagation in a DW-Logic circuit and show that properly scaled devices can have improved operation. Through building the devices, I develop a novel fabrication method for patterning sub-25 nm magnetic wires with very low (˜ 2 nm) average edge

  20. Minimizing electrode edge in organic transistors with ultrathin reduced graphene oxide for improving charge injection efficiency.

    PubMed

    Xu, Zeyang; Chen, Xiaosong; Zhang, Suna; Wu, Kunjie; Li, Hongwei; Meng, Yancheng; Li, Liqiang

    2016-05-11

    Electrode materials and geometry play a crucial role in the charge injection efficiency in organic transistors. Reduced graphene oxide (RGO) electrodes show good compatibility with an organic semiconductor from the standpoint of energy levels and ordered growth of the organic semiconductor, both of which are favourable for charge injection. However, the wide electrode edge (>10 nm) in commonly-used RGO electrodes is generally detrimental to charge injection. In this study, ultrathin (about 3 nm) RGO electrodes are fabricated via a covalency-based assembly strategy, which has advantages such as robustness against solvents, high conductivity, transparency, and easy scaling-up. More remarkably, the ultrathin electrode fabricated in this study has a narrow edge, which may facilitate the diffusion and assembly of organic semiconductors and thus form a uniform semiconductor film across the electrode/channel junction area. As a result, the minimized electrode edge may significantly improve the charge injection in organic transistors compared with thick electrodes. PMID:27062997

  1. Simulation of GaN/AlGaN heterojunction bipolar transistors: part I npn structures

    NASA Astrophysics Data System (ADS)

    Cao, X. A.; Van Hove, J. M.; Klaassen, J. J.; Polley, C. J.; Wowchak, A. M.; Chow, P. P.; King, D. J.; Zhang, A. P.; Dang, G.; Monier, C.; Pearton, S. J.; Ren, F.

    2000-07-01

    A drift-diffusion model was employed to calculate the dc performance of GaN/AlGaN heterojunction bipolar transistors (HBTs). The dc current gain was found to vary from ˜7 to 60 for collector currents of 10 -12-10 -2 A in 100 μm contact diameter devices with 2000 Å thick p-GaN base layers (P=2×10 17 cm-3) . The effects of base grading, base thickness, minority carrier lifetime and mobility in the base, base contact resistance and device operating temperature (25-300°C) were examined. The HBTs were found to have a significantly better gain at low collector current densities than the GaN bipolar junction transistors, due to the valence band offset.

  2. A miniature microcontroller curve tracing circuit for space flight testing transistors

    NASA Astrophysics Data System (ADS)

    Prokop, N.; Greer, L.; Krasowski, M.; Flatico, J.; Spina, D.

    2015-02-01

    This paper describes a novel miniature microcontroller based curve tracing circuit, which was designed to monitor the environmental effects on Silicon Carbide Junction Field Effect Transistor (SiC JFET) device performance, while exposed to the low earth orbit environment onboard the International Space Station (ISS) as a resident experiment on the 7th Materials on the International Space Station Experiment (MISSE7). Specifically, the microcontroller circuit was designed to operate autonomously and was flown on the external structure of the ISS for over a year. This curve tracing circuit is capable of measuring current vs. voltage (I-V) characteristics of transistors and diodes. The circuit is current limited for low current devices and is specifically designed to test high temperature, high drain-to-source resistance SiC JFETs. The results of each I-V data set are transmitted serially to an external telemetered communication interface. This paper discusses the circuit architecture, its design, and presents example results.

  3. Wireless Josephson Junction Arrays

    NASA Astrophysics Data System (ADS)

    Adams, Laura

    2015-03-01

    We report low temperature, microwave transmission measurements on a wireless two- dimensional network of Josephson junction arrays composed of superconductor-insulator -superconductor tunnel junctions. Unlike their biased counterparts, by removing all electrical contacts to the arrays and superfluous microwave components and interconnects in the transmission line, we observe new collective behavior in the transmission spectra. In particular we will show emergent behavior that systematically responds to changes in microwave power at fixed temperature. Likewise we will show the dynamic and collective response of the arrays while tuning the temperature at fixed microwave power. We discuss these spectra in terms of the Berezinskii-Kosterlitz-Thouless phase transition and Shapiro steps. We gratefully acknowledge the support Prof. Steven Anlage at the University of Maryland and Prof. Allen Goldman at the University of Minnesota. Physics and School of Engineering and Applied Sciences.

  4. Holliday Junction Resolvases

    PubMed Central

    Wyatt, Haley D.M.; West, Stephen C.

    2014-01-01

    Four-way DNA intermediates, called Holliday junctions (HJs), can form during meiotic and mitotic recombination, and their removal is crucial for chromosome segregation. A group of ubiquitous and highly specialized structure-selective endonucleases catalyze the cleavage of HJs into two disconnected DNA duplexes in a reaction called HJ resolution. These enzymes, called HJ resolvases, have been identified in bacteria and their bacteriophages, archaea, and eukaryotes. In this review, we discuss fundamental aspects of the HJ structure and their interaction with junction-resolving enzymes. This is followed by a brief discussion of the eubacterial RuvABC enzymes, which provide the paradigm for HJ resolvases in other organisms. Finally, we review the biochemical and structural properties of some well-characterized resolvases from archaea, bacteriophage, and eukaryotes. PMID:25183833

  5. Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

    NASA Astrophysics Data System (ADS)

    Nakaharai, Shu; Iijima, Tomohiko; Ogawa, Shinichi; Miyazaki, Hisao; Li, Songlin; Tsukagoshi, Kazuhito; Sato, Shintaro; Yokoyama, Naoki

    2012-02-01

    The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a superior on-off property. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top-gate, and these two regions are separated by a nanoribbon which works as insulator. As a result, the device forms a (P or N)-I-(P or N) junction. The off state is obtained by lifting the band of the bulk graphene of the source side and lowering that of the drain side, so that the device forms a P-I-N junction. In this configuration, the leakage current is reduced more effectively than the conventional single gate transistors due to a high barrier height and a long tunneling length in the nanoribbon. The on state is obtained by flipping the polarity of the bias of either top-gate to form a P-I-P or N-I-N junction. An experiment showed that the drain current was suppressed in the cases of P-I-N and N-I-P compared to P-I-P and N-I-N, and all of the behaviors were consistent with what was expected from the device operation model. This research is granted by JSPS through FIRST Program initiated by CSTP.

  6. Fractional order junctions

    NASA Astrophysics Data System (ADS)

    Machado, J. Tenreiro

    2015-01-01

    Gottfried Leibniz generalized the derivation and integration, extending the operators from integer up to real, or even complex, orders. It is presently recognized that the resulting models capture long term memory effects difficult to describe by classical tools. Leon Chua generalized the set of lumped electrical elements that provide the building blocks in mathematical models. His proposal of the memristor and of higher order elements broadened the scope of variables and relationships embedded in the development of models. This paper follows the two directions and proposes a new logical step, by generalizing the concept of junction. Classical junctions interconnect system elements using simple algebraic restrictions. Nevertheless, this simplistic approach may be misleading in the presence of unexpected dynamical phenomena and requires including additional "parasitic" elements. The novel γ -junction includes, as special cases, the standard series and parallel connections and allows a new degree of freedom when building models. The proposal motivates the search for experimental and real world manifestations of the abstract conjectures.

  7. Thermoelectricity in molecular junctions.

    PubMed

    Reddy, Pramod; Jang, Sung-Yeon; Segalman, Rachel A; Majumdar, Arun

    2007-03-16

    By trapping molecules between two gold electrodes with a temperature difference across them, the junction Seebeck coefficients of 1,4-benzenedithiol (BDT), 4,4'-dibenzenedithiol, and 4,4''-tribenzenedithiol in contact with gold were measured at room temperature to be +8.7 +/- 2.1 microvolts per kelvin (muV/K), +12.9 +/- 2.2 muV/K, and +14.2 +/- 3.2 muV/K, respectively (where the error is the full width half maximum of the statistical distributions). The positive sign unambiguously indicates p-type (hole) conduction in these heterojunctions, whereas the Au Fermi level position for Au-BDT-Au junctions was identified to be 1.2 eV above the highest occupied molecular orbital level of BDT. The ability to study thermoelectricity in molecular junctions provides the opportunity to address these fundamental unanswered questions about their electronic structure and to begin exploring molecular thermoelectric energy conversion. PMID:17303718

  8. Creating Reversible p-n Junction on Graphene through Ferritin Adsorption.

    PubMed

    Mulyana, Yana; Uenuma, Mutsunori; Okamoto, Naofumi; Ishikawa, Yasuaki; Yamashita, Ichiro; Uraoka, Yukiharu

    2016-03-01

    An alternative way to construct a stable p-n junction on graphene-based field effect transistor (G-FET) through physical adsorption of ferritin (spherical protein shell) is presented. The produced p-n junction on G-FET could also operate through water-gate. Native ferritins are known to be negatively charged in wet condition; however, we found that native negatively charged ferritins became positively charged after performing electron beam (EB)-irradiation. We utilized this property to construct p-n junction on G-FET. We found also that EB-irradiation could remove the effect of charged impurity adsorbed on graphene layer, thus the Dirac point was adjusted to gate voltage Vg = 0. PMID:26943894

  9. Supercurrent in Graphene Josephson Transistors

    NASA Astrophysics Data System (ADS)

    Bao, Wenzhong; Miao, Feng; Liu, Gang; Lau, Chunning

    2008-03-01

    We investigate electrical transport in single or bi-layer graphene devices coupled to superconducting electrodes. In these two-dimensional Josephson junctions, we observed gate tunable supercurrent, multiple Andreev reflections and hysteretic current-voltage characteristics. Latest experimental progress on dependence of supercurrent on temperature, number of layers and source-drain separation will be discussed.

  10. Controlling Transistor Temperature During Burn-In

    NASA Technical Reports Server (NTRS)

    Scott, B. C.

    1986-01-01

    Boiling refrigerant provides simple temperature control for newly manufactured power transistors. Heat-transfer liquid is Fluorinert FC-77 (or equivalent). Liquid boils at 100 degrees C, which is specified temperature at which transistor cases should be maintained during burn-in with this technique.

  11. CADAT field-effect-transistor simulator

    NASA Technical Reports Server (NTRS)

    1981-01-01

    CADAT field-effect transistor simulator (FETSIM) analyzes dc and transient behavior of metal-oxide-semiconductor (MOS) circuits. Both N-MOS and P-MOS transistor configurations in either bulk of silicon-on-sapphire (SOS) technology and almost any combination of R/C elements are analyzed.

  12. Transistor h parameter conversion slide rule

    NASA Technical Reports Server (NTRS)

    Brantner, R. E.

    1967-01-01

    Slide rule enables the ready conversion of transistor h parameters from one form to another and reduces calculation time by a factor of 5 to 10. The scales are selected to cover all ranges of each parameter that will normally exist for any transistor, and answers are given in the correct order of magnitude, making powers-of-ten calculations unnecessary.

  13. Pass transistor implementations of multivalued logic

    NASA Technical Reports Server (NTRS)

    Maki, G.; Whitaker, S.

    1990-01-01

    A simple straight-forward Karnaugh map logic design procedure for realization of multiple-valued logic circuits is presented in this paper. Pass transistor logic gates are used to realize multiple-valued networks. This work is an extension of pass transistor implementations for binary-valued logic.

  14. An investigation of the SNS Josephson junction as a three-terminal device. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Meissner, H.; Prans, G. P.

    1973-01-01

    A particular phenomenon of the SNS Josephson junction was investigated; i.e., control by a current entering the normal region and leaving through one of the superconducting regions. The effect of the control current on the junction was found to be dependent upon the ration of the resistances of the two halves of the N layer. A low frequency, lumped, nonlinear model was proposed to describe the electrical characteristics of the device, and a method was developed to plot the dynamic junction resistance as a function of junction current. The effective thermal noise temperature of the sample was determined. Small signal linearized analysis of the device suggests its use as an impedance transformer, although geometric limitations must be overcome. Linear approximation indicates that it is reciprocal and no power gain is possible. It is felt that, with suitable metallurgical and geometrical improvements, the device has promise to become a superconducting transistor.

  15. Signatures of topological Josephson junctions

    NASA Astrophysics Data System (ADS)

    Peng, Yang; Pientka, Falko; Berg, Erez; Oreg, Yuval; von Oppen, Felix

    2016-08-01

    Quasiparticle poisoning and diabatic transitions may significantly narrow the window for the experimental observation of the 4 π -periodic dc Josephson effect predicted for topological Josephson junctions. Here, we show that switching-current measurements provide accessible and robust signatures for topological superconductivity which persist in the presence of quasiparticle poisoning processes. Such measurements provide access to the phase-dependent subgap spectrum and Josephson currents of the topological junction when incorporating it into an asymmetric SQUID together with a conventional Josephson junction with large critical current. We also argue that pump-probe experiments with multiple current pulses can be used to measure the quasiparticle poisoning rates of the topological junction. The proposed signatures are particularly robust, even in the presence of Zeeman fields and spin-orbit coupling, when focusing on short Josephson junctions. Finally, we also consider microwave excitations of short topological Josephson junctions which may complement switching-current measurements.

  16. AlGaN Channel Transistors for Power Management and Distribution

    NASA Technical Reports Server (NTRS)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  17. Gate-tunable large negative tunnel magnetoresistance in Ni-C60-Ni single molecule transistors.

    PubMed

    Yoshida, Kenji; Hamada, Ikutaro; Sakata, Shuichi; Umeno, Akinori; Tsukada, Masaru; Hirakawa, Kazuhiko

    2013-02-13

    We have fabricated single C(60) molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as -80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C(60) molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR. PMID:23327475

  18. Total dose and dose rate models for bipolar transistors in circuit simulation.

    SciTech Connect

    Campbell, Phillip Montgomery; Wix, Steven D.

    2013-05-01

    The objective of this work is to develop a model for total dose effects in bipolar junction transistors for use in circuit simulation. The components of the model are an electrical model of device performance that includes the effects of trapped charge on device behavior, and a model that calculates the trapped charge densities in a specific device structure as a function of radiation dose and dose rate. Simulations based on this model are found to agree well with measurements on a number of devices for which data are available.

  19. Universal power transistor base drive control unit

    DOEpatents

    Gale, A.R.; Gritter, D.J.

    1988-06-07

    A saturation condition regulator system for a power transistor is disclosed which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition. 2 figs.

  20. Universal power transistor base drive control unit

    DOEpatents

    Gale, Allan R.; Gritter, David J.

    1988-01-01

    A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

  1. [Gap junction and diabetic foot].

    PubMed

    Zou, Xiao-rong; Tao, Jian; Wang, Yun-kai

    2015-11-01

    Gap junctions play a critical role in electrical synchronization and exchange of small molecules between neighboring cells; connexins are a family of structurally related transmembrane proteins that assemble to form vertebrate gap junctions. Hyperglycemia changes the structure gap junction proteins and their expression, resulting in obstruction of neural regeneration, vascular function and wound healing, and also promoting vascular atherosclerosis. These pathogenic factors would cause diabetic foot ulcers. This article reviews the involvement of connexins in pathogenesis of diabetic foot. PMID:26822053

  2. An induced junction photovoltaic cell

    NASA Technical Reports Server (NTRS)

    Call, R. L.

    1974-01-01

    Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

  3. Josephson junction simulation of neurons

    NASA Astrophysics Data System (ADS)

    Crotty, Patrick; Schult, Dan; Segall, Ken

    2010-07-01

    With the goal of understanding the intricate behavior and dynamics of collections of neurons, we present superconducting circuits containing Josephson junctions that model biologically realistic neurons. These “Josephson junction neurons” reproduce many characteristic behaviors of biological neurons such as action potentials, refractory periods, and firing thresholds. They can be coupled together in ways that mimic electrical and chemical synapses. Using existing fabrication technologies, large interconnected networks of Josephson junction neurons would operate fully in parallel. They would be orders of magnitude faster than both traditional computer simulations and biological neural networks. Josephson junction neurons provide a new tool for exploring long-term large-scale dynamics for networks of neurons.

  4. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  5. Coulomb blockade in monolayer MoS2 single electron transistor.

    PubMed

    Lee, Kyunghoon; Kulkarni, Girish; Zhong, Zhaohui

    2016-03-31

    Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals. PMID:27001412

  6. BN / Graphene / BN RF Transistors

    NASA Astrophysics Data System (ADS)

    Wang, Han; Taychatanapat, Thiti; Hsu, Allen; Jarillo-Herrero, Pablo; Palacios, Tomas

    2011-03-01

    In this work we demonstrate the first BN/graphene/BN transistor for high frequency RF applications. This sandwich structure allows a significant improvement in the mobility of graphene, which reaches more than 18,000 cm2 /Vs at room temperature. Graphene field effect transistors (GFETs) have been fabricated with LDS = 800 nm and LG = 300 nm. The minimum conduction point of these devices is very close to zero, a result of the negligible substrate doping to the graphene. A current density in excess of 1 A/mm and DC transconductance above 200 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure and initial results show a current-gain cut-off frequency fT = 10 GHz. These experimental results have been combined with simulations of the small-signal model to study the scaling potential of these GFETs for high frequency applications. The impact of the access resistances (Rs , Rd) , the capacitances (Cgs , Cgd , Cds) , and the transconductance (g m) on the frequency performance of the GFETs has also been studied. Finally, the fabricated devices have been compared to GFETs fabricated with Si O2 substrate and Al 2 O3 gate dielectrics. The improved performance obtained by the BN/graphene/BN structure is very promising to enable the next generation of high frequency RF electronics.

  7. Coulomb blockade in monolayer MoS2 single electron transistor

    NASA Astrophysics Data System (ADS)

    Lee, Kyunghoon; Kulkarni, Girish; Zhong, Zhaohui

    2016-03-01

    Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals.Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08954a

  8. Neuromuscular junction disorders.

    PubMed

    Verschuuren, Jan; Strijbos, Ellen; Vincent, Angela

    2016-01-01

    Diseases of the neuromuscular junction comprise a wide range of disorders. Antibodies, genetic mutations, specific drugs or toxins interfere with the number or function of one of the essential proteins that control signaling between the presynaptic nerve ending and the postsynaptic muscle membrane. Acquired autoimmune disorders of the neuromuscular junction are the most common and are described here. In myasthenia gravis, antibodies to acetylcholine receptors or to proteins involved in receptor clustering, particularly muscle-specific kinase, cause direct loss of acetylcholine receptors or interfere with the agrin-induced acetylcholine receptor clustering necessary for efficient neurotransmission. In the Lambert-Eaton myasthenic syndrome (LEMS), loss of the presynaptic voltage-gated calcium channels results in reduced release of the acetylcholine transmitter. The conditions are generally recognizable clinically and the diagnosis confirmed by serologic testing and electromyography. Screening for thymomas in myasthenia or small cell cancer in LEMS is important. Fortunately, a wide range of symptomatic treatments, immunosuppressive drugs, or other immunomodulating therapies is available. Future research is directed to understanding the pathogenesis, discovering new antigens, and trying to develop disease-specific treatments. PMID:27112691

  9. Tight Junctions Go Viral!

    PubMed Central

    Torres-Flores, Jesús M.; Arias, Carlos F.

    2015-01-01

    Tight junctions (TJs) are highly specialized membrane domains involved in many important cellular processes such as the regulation of the passage of ions and macromolecules across the paracellular space and the establishment of cell polarity in epithelial cells. Over the past few years there has been increasing evidence that different components of the TJs can be hijacked by viruses in order to complete their infectious cycle. Viruses from at least nine different families of DNA and RNA viruses have been reported to use TJ proteins in their benefit. For example, TJ proteins such as JAM-A or some members of the claudin family of proteins are used by members of the Reoviridae family and hepatitis C virus as receptors or co-receptors during their entry into their host cells. Reovirus, in addition, takes advantage of the TJ protein Junction Adhesion Molecule-A (JAM-A) to achieve its hematogenous dissemination. Some other viruses are capable of regulating the expression or the localization of TJ proteins to induce cell transformation or to improve the efficiency of their exit process. This review encompasses the importance of TJs for viral entry, replication, dissemination, and egress, and makes a clear statement of the importance of studying these proteins to gain a better understanding of the replication strategies used by viruses that infect epithelial and/or endothelial cells. PMID:26404354

  10. Pass-transistor very large scale integration

    NASA Technical Reports Server (NTRS)

    Maki, Gary K. (Inventor); Bhatia, Prakash R. (Inventor)

    2004-01-01

    Logic elements are provided that permit reductions in layout size and avoidance of hazards. Such logic elements may be included in libraries of logic cells. A logical function to be implemented by the logic element is decomposed about logical variables to identify factors corresponding to combinations of the logical variables and their complements. A pass transistor network is provided for implementing the pass network function in accordance with this decomposition. The pass transistor network includes ordered arrangements of pass transistors that correspond to the combinations of variables and complements resulting from the logical decomposition. The logic elements may act as selection circuits and be integrated with memory and buffer elements.

  11. Protonic transistors from thin reflecting films

    SciTech Connect

    Ordinario, David D.; Phan, Long; Jocson, Jonah-Micah; Nguyen, Tam; Gorodetsky, Alon A.

    2015-01-01

    Ionic transistors from organic and biological materials hold great promise for bioelectronics applications. Thus, much research effort has focused on optimizing the performance of these devices. Herein, we experimentally validate a straightforward strategy for enhancing the high to low current ratios of protein-based protonic transistors. Upon reducing the thickness of the transistors’ active layers, we increase their high to low current ratios 2-fold while leaving the other figures of merit unchanged. The measured ratio of 3.3 is comparable to the best values found for analogous devices. These findings underscore the importance of the active layer geometry for optimum protonic transistor functionality.

  12. Transistors using crystalline silicon devices on glass

    DOEpatents

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  13. Herlitz junctional epidermolysis bullosa.

    PubMed

    Laimer, Martin; Lanschuetzer, Christoph M; Diem, Anja; Bauer, Johann W

    2010-01-01

    Junctional epidermolysis bullosa type Herlitz (JEB-H) is the autosomal recessively inherited, more severe variant of "lucidolytic" JEB. Characterized by generalized, extensive mucocutaneous blistering at birth and early lethality, this devastating condition is most often caused by homozygous null mutations in the genes LAMA3, LAMB3, or LAMC2, each encoding for 1 of the 3 chains of the heterotrimer laminin-332. The JEB-H subtype usually presents as a severe and clinically diverse variant of the EB group of mechanobullous genodermatoses. This article outlines the epidemiology, presentation, and diagnosis of JEB-H. Morbidity and mortality are high, necessitating optimized protocols for early (including prenatal) diagnosis and palliative care. Gene therapy remains the most promising perspective. PMID:19945616

  14. Disordered graphene Josephson junctions

    NASA Astrophysics Data System (ADS)

    Muñoz, W. A.; Covaci, L.; Peeters, F. M.

    2015-02-01

    A tight-binding approach based on the Chebyshev-Bogoliubov-de Gennes method is used to describe disordered single-layer graphene Josephson junctions. Scattering by vacancies, ripples, or charged impurities is included. We compute the Josephson current and investigate the nature of multiple Andreev reflections, which induce bound states appearing as peaks in the density of states for energies below the superconducting gap. In the presence of single-atom vacancies, we observe a strong suppression of the supercurrent, which is a consequence of strong intervalley scattering. Although lattice deformations should not induce intervalley scattering, we find that the supercurrent is still suppressed, which is due to the presence of pseudomagnetic barriers. For charged impurities, we consider two cases depending on whether the average doping is zero, i.e., existence of electron-hole puddles, or finite. In both cases, short-range impurities strongly affect the supercurrent, similar to the vacancies scenario.

  15. Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates

    NASA Astrophysics Data System (ADS)

    García, I.; Geisz, J. F.; France, R. M.; Kang, J.; Wei, S.-H.; Ochoa, M.; Friedman, D. J.

    2014-08-01

    Lattice-matched and pseudomorphic tunnel junctions have been developed in the past for application in a variety of semiconductor devices, including heterojunction bipolar transistors, vertical cavity surface-emitting lasers, and multijunction solar cells. However, metamorphic tunnel junctions have received little attention. In 4-junction Ga0.51In0.49P/GaAs/Ga0.76In0.24As/Ga0.47In0.53As inverted-metamorphic solar cells (4J-IMM), a metamorphic tunnel junction is required to series connect the 3rd and 4th junctions. We present a tunnel junction based on a metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 structure for this purpose. This tunnel junction is grown on a metamorphic Ga0.76In0.24As template on a GaAs substrate. The band offsets in the resulting type-II heterojunction are calculated using the first-principles density functional method to estimate the tunneling barrier height and assess the performance of this tunnel junction against other material systems and compositions. The effect of the metamorphic growth on the performance of the tunnel junctions is analyzed using a set of metamorphic templates with varied surface roughness and threading dislocation density. Although the metamorphic template does influence the tunnel junction performance, all tunnel junctions measured have a peak current density over 200 A/cm2. The tunnel junction on the best template has a peak current density over 1500 A/cm2 and a voltage drop at 15 A/cm2 (corresponding to operation at 1000 suns) lower than 10 mV, which results in a nearly lossless series connection of the 4th junction in the 4J-IMM structure.

  16. Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, Biing-Der; Lee, Si-Chen; Sun, Tai-Ping; Yang, Sheng-Jenn

    1995-05-01

    The InSb metal-oxide-semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15, and 30 micron were fabricated successfully. The SiO2 prepared by photo-enhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage characteristics show a breakdown voltage exceeding 2 V indicating an excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.

  17. Josephson junction devices: Model quantum mechanical systems and medical applications

    NASA Astrophysics Data System (ADS)

    Chen, Josephine

    In this dissertation, three experiments using Josephson junction devices are described. In Part I, the effect of dissipation on tunneling between charge states in a superconducting single-electron transistor (sSET) was studied. The sSET was fabricated on top of a semi-conductor heterostructure with a two-dimensional electron gas (2DEG) imbedded beneath the surface. The 2DEG acted as a dissipative ground plane. The sheet resistance of the 2DEG could be varied in situ by applying a large voltage to a gate on the back of the substrate. The zero-bias conductance of the sSET was observed to increase with increasing temperature and 2DEG resistance. Some qualitative but not quantitative agreement was found with theoretical calculations of the functional dependence of the conductance on temperature and 2DEG resistance. Part II describes a series of experiments performed on magnesium diboride point-contact junctions. The pressure between the MgB2 tip and base pieces could be adjusted to form junctions with different characteristics. With light pressure applied between the two pieces, quasiparticle tunneling in superconductor-insulator-superconductor junctions was measured. From these data, a superconducting gap of approximately 2 meV and a critical temperature of 29 K were estimated. Increasing the pressure between the MgB2 pieces formed junctions with superconductor-normal metal-superconductor characteristics. We used these junctions to form MgB2 superconducting quantum interference devices (SQUIDS). Noise levels as low as 35 fT/Hz1/2 and 4 muphi 0/Hz1/2 at 1 kHz were measured. In Part III, we used a SQUID-based instrument to acquire magnetocardiograms (MCG), the magnetic field signal measured from the human heart. We measured 51 healthy volunteers and 11 cardiac patients both at rest and after treadmill exercise. We found age and sex related differences in the MCG of the healthy volunteers that suggest that these factors should be considered when evaluating the MCG for

  18. Ultra-stable oscillator with complementary transistors

    NASA Technical Reports Server (NTRS)

    Kleinberg, L. L. (Inventor)

    1974-01-01

    A high frequency oscillator, having both good short and long term stability, is formed by including a piezoelectric crystal in the base circuit of a first bi-polar transistor circuit, the bi-polar transistor itself operated below its transitional frequency and having its emitter load chosen so that the input impedance, looking into the base thereof, exhibits a negative resistance in parallel with a capacitive reactance. Combined with this basic circuit is an auxiliary, complementary, second bi-polar transistor circuit of the same form with the piezoelectric crystal being common to both circuits. By this configuration small changes in quiescent current are substantially cancelled by opposite variations in the second bi-polar transistor circuit, thereby achieving from the oscillator a signal having its frequency of oscillation stable over long time periods as well as short time periods.

  19. Silicon Carbide Transistor For Detecting Hydrocarbon Gases

    NASA Technical Reports Server (NTRS)

    Shields, Virgil B.; Ryan, Margaret A.; Williams, Roger M.

    1996-01-01

    Proposed silicon carbide variable-potential insulated-gate field-effect transistor specially designed for use in measuring concentrations of hydrocarbon gases. Devices like this prove useful numerous automotive, industrial, aeronautical, and environmental monitoring applications.

  20. Spin gated transistors for reprogrammable logic

    NASA Astrophysics Data System (ADS)

    Ciccarelli, Chiara; Gonzalez-Zalba, Fernando; Irvine, Andrew; Campion, Richard; Zarbo, Liviu; Gallagher, Brian; Ferguson, Andrew; Jungwirth, Tomas; Wunderlich, Joerg; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; Hitachi Cambridge Laboratory Team; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; University of Cambridge Team

    2014-03-01

    In spin-orbit coupled magnetic materials the chemical potential depends on the orientation of the magnetisation. By making the gate of a field effect transistor magnetic, it is possible to tune the channel conductance not only electrically but also magnetically. We show that these magnetic transistor can be used to realise non-volatile reprogrammable Boolean logic. The non-volatile reconfigurable capability resides in the magnetization-dependent band structure of the magnetic stack. A change in magnetization orientation produces a change in the electrochemical potential, which induces a charge accumulation in the correspondent gate electrode. This is readily sensed by a field-effect device such as standard field-effect transistors or more exotic single-electron transistors. We propose circuits for low power consumption applications that can be magnetically switched between NAND and OR logic functions and between NOR and AND logic functions.

  1. Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

    NASA Technical Reports Server (NTRS)

    Ponchak, George E. (Technical Monitor); Bhattacharya, Pallab

    2003-01-01

    Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

  2. 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith, Roger; Ferrier, Terry; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

  3. Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser

    NASA Astrophysics Data System (ADS)

    Feng, M.; Qiu, Junyi; Wang, C. Y.; Holonyak, N.

    2016-02-01

    Optical absorption in a p-n junction diode for a direct-gap semiconductor can be enhanced by photon-assisted tunneling in the presence of a static or dynamic electrical field. In the transistor laser, the coherent photons generated at the base quantum-well interact with the collector field and "assist" optical cavity electron tunneling from the valence band of the base to the conduction band states of the collector. In the present work, we study the cavity coherent photon intensity effect on intra-cavity photon-assisted tunneling (ICPAT) in the transistor laser and realize photon-field enhanced optical absorption. This ICPAT in a transistor laser is the unique property of voltage (field) modulation and the basis for ultrahigh speed direct laser modulation and switching.

  4. AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers.

    PubMed

    Xiang, Y; Reuterskiöld-Hedlund, C; Yu, X; Yang, C; Zabel, T; Hammar, M; Akram, M N

    2015-06-15

    We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based on the homogeneous integration of an InGaAs/GaAs VCSEL and an AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting and non-conducting mirrors are used to ensure a low-loss structure, and a variety of design variations are investigated for a proper internal biasing and current injection to ensure a wide operating range. Optimized devices show mW-range output power, mA-range base threshold current and high-temperature operation to at least 60°C with the transistor in its active mode of operation for base currents well beyond threshold. Current confinement schemes based on pnp-blocking layers or a buried tunnel junction are investigated as well as asymmetric current injection for reduced extrinsic resistances. PMID:26193547

  5. Carbon nanotube electrodes in organic transistors.

    PubMed

    Valitova, Irina; Amato, Michele; Mahvash, Farzaneh; Cantele, Giovanni; Maffucci, Antonio; Santato, Clara; Martel, Richard; Cicoira, Fabio

    2013-06-01

    The scope of this Minireview is to provide an overview of the recent progress on carbon nanotube electrodes applied to organic thin film transistors. After an introduction on the general aspects of the charge injection processes at various electrode-semiconductor interfaces, we discuss the great potential of carbon nanotube electrodes for organic thin film transistors and the recent achievements in the field. PMID:23639944

  6. Shaping Transistor Leads for Better Solder Joints

    NASA Technical Reports Server (NTRS)

    Mandel, H.; Dillon, J. D.

    1982-01-01

    Special lead-forming tool puts step in leads of microwave power transistors without damaging braze joints that fasten leads to package. Stepped leads are soldered to circuit boards more reliably than straight leads, and stress on brazes is relieved. Lead-forming hand-tool has two parts: a forming die and an actuator. Spring-loaded saddle is adjusted so that when transistor package is placed on it, leads rest on forming rails.

  7. Thermopower measurements in molecular junctions.

    PubMed

    Rincón-García, Laura; Evangeli, Charalambos; Rubio-Bollinger, Gabino; Agraït, Nicolás

    2016-08-01

    The measurement of thermopower in molecular junctions offers complementary information to conductance measurements and is becoming essential for the understanding of transport processes at the nanoscale. In this review, we discuss the recent advances in the study of the thermoelectric properties of molecular junctions. After presenting the theoretical background for thermoelectricity at the nanoscale, we review the experimental techniques for measuring the thermopower in these systems and discuss the main results. Finally, we consider the challenges in the application of molecular junctions in viable thermoelectric devices. PMID:27277330

  8. Electronic properties of nanotube junctions

    NASA Astrophysics Data System (ADS)

    Lambin, Ph.; Meunier, V.

    1998-08-01

    The possibility of realizing junctions between two different nanotubes has recently attracted a great interest, even though much remains to be done for putting this idea in concrete form. Pentagon-heptagon pair defects in the otherwise perfect graphitic network make such connections possible, with virtually infinite varieties. In this paper, the literature devoted to nanotube junctions is briefly reviewed. A special emphasize is put on the electronic properties of C nanotube junctions, together with an indication on how their current-voltage characteristics may look like.

  9. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal

    PubMed Central

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-01-01

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature ‘prototype’ PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits. PMID:27491391

  10. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal

    NASA Astrophysics Data System (ADS)

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-08-01

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature ‘prototype’ PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits.

  11. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal.

    PubMed

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-01-01

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature 'prototype' PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits. PMID:27491391

  12. Complementary transistor-transistor logic /CTTL/ - An approach to high-speed micropower logic.

    NASA Technical Reports Server (NTRS)

    Stehlin, R. A.; Niemann, G. W.

    1972-01-01

    Description of a new approach to micropower integrated circuits that is called complementary transistor-transistor logic (CTTL). This logic combines the inherent low standby power of a complementary inverter with the high speed of the TTL-type input. Results of monolithic fabricated circuits are presented. These circuits are shown to be equally adaptable to hybrid and discrete circuitry.

  13. Josephson junction Q-spoiler

    DOEpatents

    Clarke, J.; Hilbert, C.; Hahn, E.L.; Sleator, T.

    1986-03-25

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  14. Josephson junction Q-spoiler

    DOEpatents

    Clarke, John; Hilbert, Claude; Hahn, Erwin L.; Sleator, Tycho

    1988-01-01

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  15. Thermal conductance of superlattice junctions

    SciTech Connect

    Lu, Simon; McGaughey, Alan J. H.

    2015-05-15

    We use molecular dynamics simulations and the lattice-based scattering boundary method to compute the thermal conductance of finite-length Lennard-Jones superlattice junctions confined by bulk crystalline leads. The superlattice junction thermal conductance depends on the properties of the leads. For junctions with a superlattice period of four atomic monolayers at temperatures between 5 and 20 K, those with mass-mismatched leads have a greater thermal conductance than those with mass-matched leads. We attribute this lead effect to interference between and the ballistic transport of emergent junction vibrational modes. The lead effect diminishes when the temperature is increased, when the superlattice period is increased, and when interfacial disorder is introduced, but is reversed in the harmonic limit.

  16. Electronic thermometry in tunable tunnel junction

    DOEpatents

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  17. EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

    NASA Astrophysics Data System (ADS)

    Demming, Anna

    2012-09-01

    Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor

  18. Neuromuscular junctional disorders.

    PubMed

    Girija, A S; Ashraf, V V

    2008-07-01

    Neuromuscular junctional disorders (NMJ) in children are distinct entity. They may be acquired or hereditary. They pose problem in diagnosis because of the higher occurrence of sero negative Myasthenia Gravis (MG) cases in children. The identity of MusK antibody positivity in a good percentage of sero negative cases further adds to problems in diagnosis. The Congenital Myasthenic Syndrome (CMS) which are rare disorders of hereditary neuromuscular transmission (NMT) has to be differentiated because immunotherapy has no benefit in this group. Molecular genetic studies of these diseases helps to identify specific type of CMS which is important as other drugs like Fluoxetine, Quinidine are found to be effective in some. In infancy, all can manifest as floppy infant syndrome. The important key to diagnosis is by detailed electrophysiological studies including repetitive nerve stimulation at slow and high rates and its response to anticholinesterases and estimation of Acetyl choline receptor antibodies. Other causes of neuromuscular transmission defects viz. snake venom poisoning and that due to drugs are discussed. PMID:18716738

  19. Confocal Annular Josephson Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Monaco, Roberto

    2016-04-01

    The physics of Josephson tunnel junctions drastically depends on their geometrical configurations and here we show that also tiny geometrical details play a determinant role. More specifically, we develop the theory of short and long annular Josephson tunnel junctions delimited by two confocal ellipses. The behavior of a circular annular Josephson tunnel junction is then seen to be simply a special case of the above result. For junctions having a normalized perimeter less than one, the threshold curves in the presence of an in-plane magnetic field of arbitrary orientations are derived and computed even in the case with trapped Josephson vortices. For longer junctions, a numerical analysis is carried out after the derivation of the appropriate motion equation for the Josephson phase. We found that the system is modeled by a modified and perturbed sine-Gordon equation with a space-dependent effective Josephson penetration length inversely proportional to the local junction width. Both the fluxon statics and dynamics are deeply affected by the non-uniform annulus width. Static zero-field multiple-fluxon solutions exist even in the presence of a large bias current. The tangential velocity of a traveling fluxon is not determined by the balance between the driving and drag forces due to the dissipative losses. Furthermore, the fluxon motion is characterized by a strong radial inward acceleration which causes electromagnetic radiation concentrated at the ellipse equatorial points.

  20. Confocal Annular Josephson Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Monaco, Roberto

    2016-09-01

    The physics of Josephson tunnel junctions drastically depends on their geometrical configurations and here we show that also tiny geometrical details play a determinant role. More specifically, we develop the theory of short and long annular Josephson tunnel junctions delimited by two confocal ellipses. The behavior of a circular annular Josephson tunnel junction is then seen to be simply a special case of the above result. For junctions having a normalized perimeter less than one, the threshold curves in the presence of an in-plane magnetic field of arbitrary orientations are derived and computed even in the case with trapped Josephson vortices. For longer junctions, a numerical analysis is carried out after the derivation of the appropriate motion equation for the Josephson phase. We found that the system is modeled by a modified and perturbed sine-Gordon equation with a space-dependent effective Josephson penetration length inversely proportional to the local junction width. Both the fluxon statics and dynamics are deeply affected by the non-uniform annulus width. Static zero-field multiple-fluxon solutions exist even in the presence of a large bias current. The tangential velocity of a traveling fluxon is not determined by the balance between the driving and drag forces due to the dissipative losses. Furthermore, the fluxon motion is characterized by a strong radial inward acceleration which causes electromagnetic radiation concentrated at the ellipse equatorial points.

  1. Octagonal Defects at Carbon Nanotube Junctions

    PubMed Central

    Jaskólski, W.; Pelc, M.; Chico, Leonor; Ayuela, A.

    2013-01-01

    We investigate knee-shaped junctions of semiconductor zigzag carbon nanotubes. Two dissimilar octagons appear at such junctions; one of them can reconstruct into a pair of pentagons. The junction with two octagons presents two degenerate localized states at Fermi energy (EF). The reconstructed junction has only one state near EF, indicating that these localized states are related to the octagonal defects. The inclusion of Coulomb interaction splits the localized states in the junction with two octagons, yielding an antiferromagnetic system. PMID:24089604

  2. The dc characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling

    NASA Astrophysics Data System (ADS)

    Hafizi, Madjid E.; Crowell, Clarence R.; Grupen, Matthew E.

    1990-10-01

    A complete dc model for the heterojunction bipolar transistor (HBT) is presented. The HBT dc characteristics are compared with the Ebers-Moll (EM) model for conventional bipolar junction transistors (BJTs). It is shown that, although the details of HBT operation can differ markedly from those of a BJT, a model and a parameter extraction technique can be developed which have physical meaning and are exactly compatible with the EM models widely used for BJTs. Device I-V measurements at 77 and 300 K are used to analyze HBT performance in the context of an EM model. A technique is developed to extract the device base, emitter, and collector series resistances directly from the measured I-V data without requiring an ideal base current as reference. Accuracies of the extracted series resistances are assessed. The ac parameters of HBTs are calculated numerically from the physical device structure and shown to be comparable to those of conventional BJTs.

  3. A review of InP/InAlAs/InGaAs based transistors for high frequency applications

    NASA Astrophysics Data System (ADS)

    Ajayan, J.; Nirmal, D.

    2015-10-01

    This paper presents an overview of the rapid progress being made in the development of InP based devices for high speed applications. Over the past few decades, major aero space industries have been developing InP based hetero structure devices like hetero junction bipolar transistors (HBTs) and high electron mobility transistors (HEMT) because of their low DC power due to excellent low voltage operation and milli-meter wave frequency performance even though its widespread use has been limited by high cost. InP based HBTs, MOSFETs and HEMTs have also been developed by commercial companies for applications in high speed fiber optic communications because InP based device technologies takes advantage of the intrinsic material properties such as high thermal conductivity, high electron mobility and low energy band gap for low voltage operation compared to silicon, silicon-germenium, and GaAs based semiconductor devices.

  4. All-electric spin control in interference single electron transistors.

    PubMed

    Donarini, Andrea; Begemann, Georg; Grifoni, Milena

    2009-08-01

    Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment(1) has been repeated with electrons in vacuum(2,3) up to the more massive C(60) molecules.(4) Mesoscopic rings threaded by a magnetic flux provide the solid-state analogues.(5,6) Intramolecular interference has been recently discussed in molecular junctions.(7-11) Here we propose to exploit interference to achieve all-electrical control of a single electron spin in quantum dots, a highly desirable property for spintronics(12-14) and spin-qubit applications.(15-19) The device consists of an interference single electron transistor,(10,11) where destructive interference between orbitally degenerate electronic states produces current blocking at specific bias voltages. We show that in the presence of parallel polarized ferromagnetic leads the interplay between interference and the exchange interaction on the system generates an effective energy renormalization yielding different blocking biases for majority and minority spins. Hence, by tuning the bias voltage full control over the spin of the trapped electron is achieved. PMID:19719108

  5. Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

    NASA Astrophysics Data System (ADS)

    Buchs, Gilles; Barkelid, Maria; Bagiante, Salvatore; Steele, Gary A.; Zwiller, Val

    2011-10-01

    We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed microscopic study of the evolution of the band profiles as a function of the gates voltage. Here we study the emergence of a p-n and a n-p junctions out of a n-type transistor channel using two local gates. In both cases the I - V curves recorded for gate configurations corresponding to the formation of the p-n or n-p junction in the SPCM measurements reveal a clear transition from resistive to rectification regimes. The rectification curves can be fitted well to the Shockley diode model with a series resistor and reveal a clear ideal diode behavior.

  6. Ambipolar phosphorene field effect transistor.

    PubMed

    Das, Saptarshi; Demarteau, Marcel; Roelofs, Andreas

    2014-11-25

    In this article, we demonstrate enhanced electron and hole transport in few-layer phosphorene field effect transistors (FETs) using titanium as the source/drain contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect mobility values were extracted to be ∼38 cm(2)/Vs for electrons and ∼172 cm(2)/Vs for the holes. On the basis of our experimental data, we also comprehensively discuss how the contact resistances arising due to the Schottky barriers at the source and the drain end effect the different regime of the device characteristics and ultimately limit the ON state performance. We also propose and implement a novel technique for extracting the transport gap as well as the Schottky barrier height at the metal-phosphorene contact interface from the ambipolar transfer characteristics of the phosphorene FETs. This robust technique is applicable to any ultrathin body semiconductor which demonstrates symmetric ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, chemical doping free, and fully complementary logic inverter based on ambipolar phosphorene FETs. PMID:25329532

  7. A correlated nickelate synaptic transistor

    NASA Astrophysics Data System (ADS)

    Shi, Jian; Ha, Sieu D.; Zhou, You; Schoofs, Frank; Ramanathan, Shriram

    2013-10-01

    Inspired by biological neural systems, neuromorphic devices may open up new computing paradigms to explore cognition, learning and limits of parallel computation. Here we report the demonstration of a synaptic transistor with SmNiO3, a correlated electron system with insulator-metal transition temperature at 130°C in bulk form. Non-volatile resistance and synaptic multilevel analogue states are demonstrated by control over composition in ionic liquid-gated devices on silicon platforms. The extent of the resistance modulation can be dramatically controlled by the film microstructure. By simulating the time difference between postneuron and preneuron spikes as the input parameter of a gate bias voltage pulse, synaptic spike-timing-dependent plasticity learning behaviour is realized. The extreme sensitivity of electrical properties to defects in correlated oxides may make them a particularly suitable class of materials to realize artificial biological circuits that can be operated at and above room temperature and seamlessly integrated into conventional electronic circuits.

  8. A correlated nickelate synaptic transistor.

    PubMed

    Shi, Jian; Ha, Sieu D; Zhou, You; Schoofs, Frank; Ramanathan, Shriram

    2013-01-01

    Inspired by biological neural systems, neuromorphic devices may open up new computing paradigms to explore cognition, learning and limits of parallel computation. Here we report the demonstration of a synaptic transistor with SmNiO₃, a correlated electron system with insulator-metal transition temperature at 130°C in bulk form. Non-volatile resistance and synaptic multilevel analogue states are demonstrated by control over composition in ionic liquid-gated devices on silicon platforms. The extent of the resistance modulation can be dramatically controlled by the film microstructure. By simulating the time difference between postneuron and preneuron spikes as the input parameter of a gate bias voltage pulse, synaptic spike-timing-dependent plasticity learning behaviour is realized. The extreme sensitivity of electrical properties to defects in correlated oxides may make them a particularly suitable class of materials to realize artificial biological circuits that can be operated at and above room temperature and seamlessly integrated into conventional electronic circuits. PMID:24177330

  9. Indium foil with beryllia washer improves transistor heat dissipation

    NASA Technical Reports Server (NTRS)

    Hilliard, J.; John, J. E. A.

    1964-01-01

    Indium foil, used as an interface material in transistor mountings, greatly reduces the thermal resistance of beryllia washers. This method improves the heat dissipation of power transistors in a vacuum environment.

  10. Negative differential thermal conductance and thermal rectification effects across a graphene-based superconducting junction

    NASA Astrophysics Data System (ADS)

    Zhou, Xingfei; Zhang, Zhi

    2016-05-01

    We study the heat transport in a graphene-based normal-superconducting junction by solving the Bogoliubov-de Gennes (BdG) equation. There are two effects, the competitive and cooperative effects, which come from the interaction between the temperature-dependent energy-gap function in the superconducting region and the occupation difference of quasiparticles. It is found that the competitive effect can not only bring the negative differential thermal conductance effect but also the thermal rectification effect. By contrast, the cooperative effect just causes the thermal rectification effect. Furthermore, the thermal rectification ratio and the magnitude of heat current should be seen as two inseparable signs for characterizing the thermal rectification effect. These discoveries can add more application for the graphene-based superconducting junction, such as heat diode and heat transistor, at cryogenic temperatures.

  11. Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

    PubMed

    Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

    2015-04-01

    Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation. PMID:25775204

  12. Graphite-graphene semiconductor junctions and magneto-dielectric coupling in Schottky diodes

    NASA Astrophysics Data System (ADS)

    Tongay, Sefaattin

    The goal of this dissertation is to incorporate graphite and graphene into today's semiconductor technology as a Schottky barrier diodes (metal/semiconductor junctions) that are widely used in metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs), high temperature and frequency devices, solar cells and sensors/detectors. The first part of the dissertation aims to give the reader a general idea about the physics at the metal-semiconductor junctions and essential theory background. The second chapter of the dissertation questions effects of temperature and magnetic field on the diode characteristics of Schottky junctions. In this chapter, we present observation of negative magnetocapacitance on GaAs:Si/Au junctions and fully equipped with the theory, we present a phenomenological explanation for the observed effect. In the third chapter, we for the first time introduce multi-layer-graphene as a metal (semimetal) electrode to form Schottky barriers on various technologically significant semiconductors such as Si, GaAs, SiC and GaN. Multi-layer-graphene/ semiconductor junctions not only display good current-voltage (I - V) and capacitance-voltage (C - V) characteristics but also are significant since the Schottky barrier height and characteristics are mainly governed by the interaction and bond formation at few layers on the metal and semiconductor interface. This automatically implies that the presented results also hold for graphene/semiconductor junctions. Chapter 4, takes the Schottky formation at the multi-layer-graphene(graphene)/ semiconductor junction to another level and aims to change the Fermi level of the metal electrode by intercalation with Bromine and tune the barrier height. Observed results are significant in MESFET technology since different barrier height are desired depending on the application. The remainder of the dissertation, focuses on the properties of graphite and graphene to have more

  13. Fabrication and characterization of heterojunction transistors

    NASA Astrophysics Data System (ADS)

    Lo, Chien-Fong

    2011-12-01

    Submircon emitter finger high-speed double heterojunction InAlAs/InGaAsSb/InGaAs bipolar transistors (DHBTs) and a variety of nitride high electron mobility transistors (HEMTs) including AlGaN/GaN, InAlN/GaN, and AlN/GaN were fabricated and characterized. DHBT structures were grown by solid source molecular beam epitaxy (SSMBE) on Fe-doped semiinsulating InP substrates and nitride HEMTs were grown with a metal organic chemical vapor deposition (MOCVD) system on sapphire or SiC substrates. AlN/GaN HEMTs were grown with a RF-VMBE on sapphire substrates. Ultra low base contact resistance of 3.7 x 10-7 ohm-cm2 after 1 min 250¢XC thermal treatment on noval InGaAsSb base of DHBTs was achieved and a long-term thermal stability of base metallization was studied. Regarding small scale DHBT fabrication, tri-layer system was introduced to improve the resolution for submicron emitter patterning and help to pile up a thicker emitter metal stack; guard-ring technique was applied around the emitter periphery in order to preserve the current gain at small emitter dimensions. Ultra low turn-on voltage and high current gain can be realized with InGaAsSb-base DHBTs as compared to the conventional InGaAs-base DHBTs. A peak current gain cutoff frequency (fT) of 268 GHz and power gain cutoff frequency (fmax) of 485 GHz were achieved. GaN-based HEMTs herein were fabricated with gate lengths from 400 nm to 1im, and were deposited Ti/Al/Ni/Au as their Ohmic contact metallization. Effects of the Ohmic contact annealing for lattice-matched InAlN/GaN HEMTs with and without a thin GaN cap layer were exhibited and their optimal annealing temperature were obtained. A maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm were demonstrated for InAlN/GaN HEMTs with the shortest gate length. A unity-gain cutoff frequency (fT) of 69 GHz and a maximum frequency of oscillation (fmax) of 80 GHz for InAlN/GaN HEMTs were extracted from measured scattering parameters

  14. Discrete transistor measuring and matching using a solid core oven

    NASA Astrophysics Data System (ADS)

    Inkinen, M.; Mäkelä, K.; Vuorela, T.; Palovuori, K.

    2013-03-01

    This paper presents transistor measurements done at a constant temperature. The aim in this research was to develop a reliable and repeatable method for measuring and searching transistor pairs with similar parameters, as in certain applications it is advantageous to use transistors from the same production batch due to the significant variability in batches from different manufacturers. Transistor manufacturing methods are well established, but due to the large variability in tolerance, not even transistors from the same manufacturing batch have identical properties. Transistors' electrical properties are also strongly temperature-dependent. Therefore, when measuring transistor properties, the temperature must be kept constant. For the measurement process, a solid-core oven providing stable temperature was implemented. In the oven, the base-to-emitter voltage (VBE) and DC-current gain (β) of 32 transistors could be measured simultaneously. The oven's temperature was controlled with a programmable thermostat, which allowed accurate constant temperature operation. The oven is formed by a large metal block with an individual chamber for each transistor to be measured. Isolation of individual transistors and the highly thermally conductive metal core structure prevent thermal coupling between transistors. The oven enables repeatable measurements, and thus measurements between different batches are comparable. In this research study, the properties of over 5000 transistors were measured and the variance of the aforementioned properties was analyzed.

  15. Self-protecting transistor oscillator for treating animal tissues

    DOEpatents

    Doss, James D.

    1980-01-01

    A transistor oscillator circuit wherein the load current applied to animal tissue treatment electrodes is fed back to the transistor. Removal of load is sensed to automatically remove feedback and stop oscillations. A thermistor on one treatment electrode senses temperature, and by means of a control circuit controls oscillator transistor current.

  16. Stretchable transistors with buckled carbon nanotube films as conducting channels

    DOEpatents

    Arnold, Michael S; Xu, Feng

    2015-03-24

    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  17. Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation

    NASA Astrophysics Data System (ADS)

    Huh, In; Cheon, Woo Young; Choi, Woo Young

    2016-04-01

    A subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory (SAT RAM) has been proposed and fabricated for low-power nonvolatile memory applications. The proposed SAT RAM cell demonstrates adjustable subthreshold swing (SS) depending on stored information: small SS in the erase state ("1" state) and large SS in the program state ("0" state). Thus, SAT RAM cells can achieve low read voltage (Vread) with a large memory window in addition to the effective suppression of ambipolar behavior. These unique features of the SAT RAM are originated from the locally stored charge, which modulates the tunneling barrier width (Wtun) of the source-to-channel tunneling junction.

  18. Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

    NASA Astrophysics Data System (ADS)

    Jin, Liu; Yongguang, Chen; Zhiliang, Tan; Jie, Yang; Xijun, Zhang; Zhenxing, Wang

    2011-10-01

    Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects, and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability. Therefore, the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally. 100 samples have been tested for multiple pulses until a failure occurred. Meanwhile, the distributions of electric field, current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici. There is a good agreement between the simulated results and failure analysis. In the case of a thermal couple, the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects. The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure. When the ESD level increased to 1.3 kV, the collector-base junction has been burnt out first. The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic. In addition, fatigue phenomena are observed during ESD testing, with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

  19. Transistors using crystalline silicon devices on glass

    DOEpatents

    McCarthy, A.M.

    1995-05-09

    A method is disclosed for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

  20. A Heteroepitaxial Perovskite Metal-Base Transistor

    SciTech Connect

    Yajima, T.; Hikita, Y.; Hwang, H.Y.; /Tokyo U. /JST, PRESTO /SLAC

    2011-08-11

    'More than Moore' captures a concept for overcoming limitations in silicon electronics by incorporating new functionalities in the constituent materials. Perovskite oxides are candidates because of their vast array of physical properties in a common structure. They also enable new electronic devices based on strongly-correlated electrons. The field effect transistor and its derivatives have been the principal oxide devices investigated thus far, but another option is available in a different geometry: if the current is perpendicular to the interface, the strong internal electric fields generated at back-to-back heterojunctions can be used for oxide electronics, analogous to bipolar transistors. Here we demonstrate a perovskite heteroepitaxial metal-base transistor operating at room temperature, enabled by interface dipole engineering. Analysis of many devices quantifies the evolution from hot-electron to permeable-base behaviour. This device provides a platform for incorporating the exotic ground states of perovskite oxides, as well as novel electronic phases at their interfaces.

  1. Radiofrequency Nanoelectrolytic Debye-Layer Transistor

    NASA Astrophysics Data System (ADS)

    Fraikin, Jean-Luc; Requa, Michael; Stanton, Michael; Cleland, Andrew

    2009-03-01

    A voltage-biased metal immersed in an aqueous electrolyte attracts ions from the solution, causing the accumulation of a diffuse layer of charge close to its surface. This layer is called the Debye-Huckel layer, or double layer. For a non-reactive electrode, the electric double-layer (EDL) presents a capacitive electrical impedance, which depends non-linearly on the voltage applied across it. We present a novel transistor whose transduction element is the EDL capacitance, which allows electronic gating of a 50 MHz signal at frequencies close to 1 MHz. The transistor comprises three terminals: a pair of nanofabricated interdigitated electrodes (IDEs) embedded in an electrolyte-filled microfluidic channel, and a third, gating Ag/AgCl electrode in the same fluid volume. We demonstrate direct gating of the transistor with the Debye layer, and make use of the device to measure the voltage dependence of the EDL capacitance over a broad range of electrode bias.

  2. Environmentally friendly transistors and circuits on paper.

    PubMed

    Pettersson, Fredrik; Remonen, Tommi; Adekanye, David; Zhang, Yanxi; Wilén, Carl-Eric; Österbacka, Ronald

    2015-04-27

    We created environmentally friendly low-voltage, ion-modulated transistors (IMTs) that can be fabricated successfully on a paper substrate. A range of ionic liquids (ILs) based on choline chloride (ChoCl) were used as the electrolytic layer in the IMTs. Different organic compounds were mixed with ChoCl to create solution-processable deep eutectic mixtures that are liquid or semiliquid at room temperature. In the final, solid version of the IMT, the ILs are also solidified by using a commercial binder to create printable transistor structures The semiconductor layer in the IMT is also substituted with a blend of the original semiconductor and a biodegradable polymer insulator. This reduces the amount of expensive and potentially harmful semiconductor used, and it also provides increased transistor performance, especially increasing the device switching speed. These environmentally friendly IMTs are then used to create ring oscillators, logic gates, and memories on paper. PMID:25694168

  3. Thin Film Transistors On Plastic Substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  4. High Performance Airbrushed Organic Thin Film Transistors

    SciTech Connect

    Chan, C.; Richter, L; Dinardo, B; Jaye, C; Conrad, B; Ro, H; Germack, D; Fischer, D; DeLongchamp, D; Gunlach, D

    2010-01-01

    Spray-deposited poly-3-hexylthiophene (P3HT) transistors were characterized using electrical and structural methods. Thin-film transistors with octyltrichlorosilane treated gate dielectrics and spray-deposited P3HT active layers exhibited a saturation regime mobility as high as 0.1 cm{sup 2} V{sup -1} s{sup -1}, which is comparable to the best mobilities observed in high molecular mass P3HT transistors prepared using other methods. Optical and atomic force microscopy showed the presence of individual droplets with an average diameter of 20 {micro}m and appreciable large-scale film inhomogeneities. Despite these inhomogeneities, near-edge x-ray absorption fine structure spectroscopy of the device-relevant channel interface indicated excellent orientation of the P3HT.

  5. Operation of graphene transistors at gigahertz frequencies.

    PubMed

    Lin, Yu-Ming; Jenkins, Keith A; Valdes-Garcia, Alberto; Small, Joshua P; Farmer, Damon B; Avouris, Phaedon

    2009-01-01

    Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T) = g(m)/(2piC(G)). The peak f(T) increases with a reduced gate length, and f(T) as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications. PMID:19099364

  6. Switching Characteristics of Ferroelectric Transistor Inverters

    NASA Technical Reports Server (NTRS)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  7. Static Characteristics of the Ferroelectric Transistor Inverter

    NASA Technical Reports Server (NTRS)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  8. Total Dose Effects in Conventional Bipolar Transistors

    NASA Technical Reports Server (NTRS)

    Johnston, A. H.; Swift, G. W.; Rax, B. G.

    1994-01-01

    This paper examines various factors in bipolar device construction and design, and discusses their impact on radiation hardness. The intent of the paper is to improve understanding of the underlying mechanisms for practical devices without special test structures, and to provide (1) guidance in ways to select transistor designs that are more resistant to radiation damage, and (2) methods to estimate the maximum amount of damage that might be expected from a basic transistor design. The latter factor is extremely important in assessing the risk that future lots of devices will be substantially below design limits, which are usually based on test data for older devices.

  9. VHDL simulation with access to transistor models

    NASA Technical Reports Server (NTRS)

    Gibson, J.

    1991-01-01

    Hardware description languages such as VHDL have evolved to aid in the design of systems with large numbers of elements and a wide range of electronic and logical abstractions. For high performance circuits, behavioral models may not be able to efficiently include enough detail to give designers confidence in a simulation's accuracy. One option is to provide a link between the VHDL environment and a transistor level simulation environment. The coupling of the Vantage Analysis Systems VHDL simulator and the NOVA simulator provides the combination of VHDL modeling and transistor modeling.

  10. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

    NASA Astrophysics Data System (ADS)

    Buscema, Michele; Groenendijk, Dirk J.; Steele, Gary A.; van der Zant, Herre S. J.; Castellanos-Gomez, Andres

    2014-08-01

    In conventional photovoltaic solar cells, photogenerated carriers are extracted by the built-in electric field of a semiconductor PN junction, defined by ionic dopants. In atomically thin semiconductors, the doping level can be controlled by the field effect, enabling the implementation of electrically tunable PN junctions. However, most two-dimensional (2D) semiconductors do not show ambipolar transport, which is necessary to realize PN junctions. Few-layer black phosphorus (b-P) is a recently isolated 2D semiconductor with direct bandgap, high mobility, large current on/off ratios and ambipolar operation. Here we fabricate few-layer b-P field-effect transistors with split gates and hexagonal boron nitride dielectric. We demonstrate electrostatic control of the local charge carrier type and density in the device. Illuminating a gate-defined PN junction, we observe zero-bias photocurrents and significant open-circuit voltages due to the photovoltaic effect. The small bandgap of the material allows power generation for illumination wavelengths up to 940 nm, attractive for energy harvesting in the near-infrared.

  11. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating.

    PubMed

    Buscema, Michele; Groenendijk, Dirk J; Steele, Gary A; van der Zant, Herre S J; Castellanos-Gomez, Andres

    2014-01-01

    In conventional photovoltaic solar cells, photogenerated carriers are extracted by the built-in electric field of a semiconductor PN junction, defined by ionic dopants. In atomically thin semiconductors, the doping level can be controlled by the field effect, enabling the implementation of electrically tunable PN junctions. However, most two-dimensional (2D) semiconductors do not show ambipolar transport, which is necessary to realize PN junctions. Few-layer black phosphorus (b-P) is a recently isolated 2D semiconductor with direct bandgap, high mobility, large current on/off ratios and ambipolar operation. Here we fabricate few-layer b-P field-effect transistors with split gates and hexagonal boron nitride dielectric. We demonstrate electrostatic control of the local charge carrier type and density in the device. Illuminating a gate-defined PN junction, we observe zero-bias photocurrents and significant open-circuit voltages due to the photovoltaic effect. The small bandgap of the material allows power generation for illumination wavelengths up to 940 nm, attractive for energy harvesting in the near-infrared. PMID:25164986

  12. Multiwall nanotubes with intramolecular junctions (CNx/C): Preparation, rectification, logic gates, and application

    NASA Astrophysics Data System (ADS)

    Hu, Ping'an; Xiao, Kai; Liu, Yunqi; Yu, Gui; Wang, Xianbao; Fu, Lei; Cui, Guanglei; Zhu, Daoben

    2004-06-01

    We prepared a large quantity of multiwall nanotubes with intramolecular junctions (CNx/C) by pyrolysis of iron phthalocyanine with or without an inlet of ammonia gas. The nanotubes consist of two sections, one section made of carbon nitride featuring bamboo-like structure and the other one made of carbon featuring empty hollow cylinder structure, and thus the intramolecular junctions were formed in the middle as a result of being doped or undoped with nitrogen. Nanodiode based on a single CNx/C junction shows reproducible rectifying behavior with a rectification ratio of 1.3×103 at ±2 V. In addition, the nanodiode demonstrated as a half-wave rectifier worked at an input sine wave of 1 kHz. Two CNx/C junctions were configured together to exhibit functions of OR and AND logic gates. Moreover, after substituting the wave-detection silicon diode in common transistor radio set with our nanodiode, the radio set still worked normally, representing an important step toward the potential application for nano-scale devices.

  13. Amplification effect of low-field magnetoresistance in silicon dual p - n junctions

    NASA Astrophysics Data System (ADS)

    Yang, Dezheng; Wang, Tao; Si, Mingsu; Wang, Fangcong; Zhou, Shiming; Xue, Desheng

    Nonmagnetic semiconductors with large magnetoresistance are identified as promising feature for the development of magnetoelectronics. However, to manipulate the magnetoresistance require the magnetic field of several Tesla. In this work, we realized an amplification effect of low-field magnetoresistance based on an elementary electronic building block: dual p - n junction. Analogous to the electrical amplification effect of transistor p - n -p junction, where the coupling current between p - n and n - p junctions is tuned by base current, in a silicon p + - n - n + device we demonstrate that the coupling strength of p + - n and n - n + junctions can be tuned by magnetic field. Owing to the amplification effect of magnetic-field-manipulated coupling, at a small magnetic field from 0 to 0.1 T the device is directly switched from conducting state ''on'' (10000 ohms) to blocking state ''off'' (5 megohm), yielding an magnetoresistance of 50,000 per cent and magnetic field sensitivity as high as 50 per cent Oe-1. Such a combination of magnetoresistance and high sensitivity not only makes the semiconductor device available in the magnetic field sensing industry, but also permits a new kind of magnetic-field-manipulated semiconductor electronics.

  14. Theory of asymmetric and negative differential magnon tunneling under temperature bias: Towards a spin Seebeck diode and transistor

    NASA Astrophysics Data System (ADS)

    Ren, Jie; Zhu, Jian-Xin

    2013-09-01

    We study the nonequilibrium transport for the asymmetric and negative differential magnon tunneling driven by temperature bias. We demonstrate that the many-body magnon interaction that makes the magnonic spectrum temperature-dependent is the crucial factor for the emergence of rectification and negative differential spin Seebeck effects in magnon tunneling junctions. When magnonic junctions have temperature-dependent density of states, reversing the temperature bias is able to give asymmetric spin currents and increasing temperature bias could give an anomalously decreasing magnonic spin current. We show that these properties are relevant for building spin Seebeck diodes and transistors, which could play important roles in controlling information and energy in magnonics and spin caloritronics.

  15. Conducting polyaniline nanowire electrode junction

    NASA Astrophysics Data System (ADS)

    Gaikwad, Sumedh; Bodkhe, Gajanan; Deshmukh, Megha; Patil, Harshada; Rushi, Arti; Shirsat, Mahendra D.; Koinkar, Pankaj; Kim, Yun-Hae; Mulchandani, Ashok

    2015-03-01

    In this paper, a synthesis of conducting polyaniline nanowires electrode junction (CPNEJ) has been reported. Conducting polyaniline nanowires electrode junction on Si/SiO2 substrate (having 3 μm gap between two gold microelectrodes) is prepared. Polyaniline nanowires with diameter (ca. 140 nm to 160 nm) were synthesized by one step electrochemical polymerization using galvanostatic (constant current) technique to bridge this gap. The surface morphology of CPNEJ was studied by scanning electron microscope (SEM). The synthesized CPNEJ is an excellent platform for biosensor applications.

  16. High current gain 4H-SiC bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Yourun, Zhang; Jinfei, Shi; Ying, Liu; Chengchun, Sun; Fei, Guo; Bo, Zhang

    2016-04-01

    A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The electrons trapped in the extrinsic base surface induce the degeneration of SiC BJTs device performance. By modulating the electron recombination rate, the novel structure can increase the current gain to 63.2% compared with conventional ones with the compatible process technology. Optimized sizes are an overlapped metal length of 4 μm, as well as an oxide layer thickness of 50 nm. Project supported by the National Natural Science Foundation of China (Nos. 61306093, 61401075).

  17. Silicon Carbide Junction Field Effect Transistor Digital Logic Gates Demonstrated at 600 deg. C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.

  18. Signal processing and compensation electronics for junction field-effect transistor /JFET/ focal plane arrays

    NASA Astrophysics Data System (ADS)

    Wittig, K. R.

    1982-06-01

    A signal processing system has been designed and constructed for a pyroelectric infrared area detector which uses a matrix-addressable JFET array for readout and for on-focal plane preamplification. The system compensates for all offset and gain nonuniformities in and after the array. Both compensations are performed in real time at standard television rates, so that changes in the response characteristics of the array are automatically corrected for. Two-point compensation is achieved without the need for two separate temperature references. The focal plane circuitry used to read out the array, the offset and gain compensation algorithms, the architecture of the signal processor, and the system hardware are described.

  19. Preface: Charge transport in nanoscale junctions

    NASA Astrophysics Data System (ADS)

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-01

    many particle excitations, new surface states in semiconductor electrodes, various mechanisms for single molecule rectification of the current, inelastic electron spectra and SERS spectroscopy. Three terminal architectures allowing (electrochemical) gating and transistor effects. Electrochemical nanojunctions and gating: intermolecular electron transfer in multi-redox metalloproteins, contact force modulation, characteristic current-noise patterns due to conformational fluctuations, resonance effects and electrocatalysis. Novel architectures: linear coupled quantum-dot-bridged junctions, electrochemical redox mediated transfer in two center systems leading to double maxima current-voltage plots and negative differential resistance, molecular-nanoparticle hybrid junctions and unexpected mesoscopic effects in polymeric wires. Device integration: techniques for creating stable metal/molecule/metal junctions using 'nano-alligator clips' and integration with 'traditional' silicon-based technology. The Guest Editors would like to thank all of the authors and referees of this special issue for their meticulous work in making each paper a valuable contribution to this research area, the early-bird authors for their patience, and Journal of Physics: Condensed Matter editorial staff in Bristol for their continuous support.

  20. GLIAL ANKYRINS FACILITATE PARANODAL AXOGLIAL JUNCTION ASSEMBLY

    PubMed Central

    Chang, Kae-Jiun; Zollinger, Daniel R.; Susuki, Keiichiro; Sherman, Diane L.; Makara, Michael A.; Brophy, Peter J.; Cooper, Edward C.; Bennett, Vann; Mohler, Peter J.; Rasband, Matthew N.

    2014-01-01

    Neuron-glia interactions establish functional membrane domains along myelinated axons. These include nodes of Ranvier, paranodal axoglial junctions, and juxtaparanodes. Paranodal junctions are the largest vertebrate junctional adhesion complex, are essential for rapid saltatory conduction, and contribute to assembly and maintenance of nodes. However, the molecular mechanisms underlying paranodal junction assembly are poorly understood. Ankyrins are cytoskeletal scaffolds traditionally associated with Na+ channel clustering in neurons and important for membrane domain establishment and maintenance in many cell types. Here, we show that ankyrinB, expressed by Schwann cells, and ankyrinG, expressed by oligodendrocytes, are highly enriched at the glial side of paranodal junctions where they interact with the essential glial junctional component neurofascin 155. Conditional knockout of ankyrins in oligodendrocytes disrupts paranodal junction assembly and delays nerve conduction during early development in mice. Thus, glial ankyrins function as major scaffolds that facilitate early and efficient paranodal junction assembly in the developing central nervous system. PMID:25362471

  1. Simple Electronic Analog of a Josephson Junction.

    ERIC Educational Resources Information Center

    Henry, R. W.; And Others

    1981-01-01

    Demonstrates that an electronic Josephson junction analog constructed from three integrated circuits plus an external reference oscillator can exhibit many of the circuit phenomena of a real Josephson junction. Includes computer and other applications of the analog. (Author/SK)

  2. Glial ankyrins facilitate paranodal axoglial junction assembly.

    PubMed

    Chang, Kae-Jiun; Zollinger, Daniel R; Susuki, Keiichiro; Sherman, Diane L; Makara, Michael A; Brophy, Peter J; Cooper, Edward C; Bennett, Vann; Mohler, Peter J; Rasband, Matthew N

    2014-12-01

    Neuron-glia interactions establish functional membrane domains along myelinated axons. These include nodes of Ranvier, paranodal axoglial junctions and juxtaparanodes. Paranodal junctions are the largest vertebrate junctional adhesion complex, and they are essential for rapid saltatory conduction and contribute to assembly and maintenance of nodes. However, the molecular mechanisms underlying paranodal junction assembly are poorly understood. Ankyrins are cytoskeletal scaffolds traditionally associated with Na(+) channel clustering in neurons and are important for membrane domain establishment and maintenance in many cell types. Here we show that ankyrin-B, expressed by Schwann cells, and ankyrin-G, expressed by oligodendrocytes, are highly enriched at the glial side of paranodal junctions where they interact with the essential glial junctional component neurofascin 155. Conditional knockout of ankyrins in oligodendrocytes disrupts paranodal junction assembly and delays nerve conduction during early development in mice. Thus, glial ankyrins function as major scaffolds that facilitate early and efficient paranodal junction assembly in the developing CNS. PMID:25362471

  3. Transistor-based particle detection systems and methods

    DOEpatents

    Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

    2015-06-09

    Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

  4. SiC Optically Modulated Field-Effect Transistor

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  5. Layer Engineering of 2D Semiconductor Junctions.

    PubMed

    He, Yongmin; Sobhani, Ali; Lei, Sidong; Zhang, Zhuhua; Gong, Yongji; Jin, Zehua; Zhou, Wu; Yang, Yingchao; Zhang, Yuan; Wang, Xifan; Yakobson, Boris; Vajtai, Robert; Halas, Naomi J; Li, Bo; Xie, Erqing; Ajayan, Pulickel

    2016-07-01

    A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p-n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses. PMID:27136275

  6. Measurement of tunnel junction resistance during formation

    SciTech Connect

    Barber, W.C.; Johnson, R.T.; Lee, J.S.; Laws, K.E.; Bland, R.W. )

    1993-11-01

    The authors have measured the characteristics of aluminum tunnel junctions during and immediately after the formation of the junction. This has permitted us to observe changes in the oxide barrier, in vacuum and in air. By observing the barrier resistance during sputtering, they were able to diagnose and correct problems due to plasma discharges which were damaging the junctions. They report preliminary results from junctions passivated with a silicon nitride cap layer.

  7. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

    NASA Astrophysics Data System (ADS)

    Fontana, Marcio; Deppe, Tristan; Boyd, Anthony K.; Rinzan, Mohamed; Liu, Amy Y.; Paranjape, Makarand; Barbara, Paola

    2013-04-01

    Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.

  8. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

    NASA Astrophysics Data System (ADS)

    Boyd, Anthony; Fontana, Marcio; Deppe, Tristan; Rinzan, Mohamed; Liu, Amy; Paranjape, Makarand; Barbara, Paola

    2013-03-01

    Atomically thin molybdenum disulfide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated..., transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect. Work Funded by NSF, DMR 1008242.

  9. Radiation Tolerance of 65nm CMOS Transistors

    DOE PAGESBeta

    Krohn, M.; Bentele, B.; Christian, D. C.; Cumalat, J. P.; Deptuch, G.; Fahim, F.; Hoff, J.; Shenai, A.; Wagner, S. R.

    2015-12-11

    We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

  10. A Flush Toilet Model for the Transistor

    NASA Astrophysics Data System (ADS)

    Organtini, Giovanni

    2012-04-01

    In introductory physics textbooks, diodes working principles are usually well described in a relatively simple manner. According to our experience, they are well understood by students. Even when no formal derivation of the physics laws governing the current flow through a diode is given, the use of this device as a check valve is easily accepted. This is not true for transistors. In most textbooks the behavior of a transistor is given without formal explanation. When the amplification is computed, for some reason, students have difficulties in identifying the basic physical mechanisms that give rise to such an effect. In this paper we give a simple and captivating illustration of the working principles of a transistor as an amplifier, tailored to high school students even with almost no background in electronics nor in modern physics. We assume that the target audience is familiar with the idea that a diode works as a check valve for currents. The lecture emphasis is on the illustration of physics principles governing the behavior of a transistor, rather than on a formal description of the processes leading to amplification.

  11. Symmetry-Protected Quantum Adiabatic Transistors

    NASA Astrophysics Data System (ADS)

    Williamson, Dominic J.; Bartlett, Stephen D.

    2014-03-01

    An essential development in the history of computing was the invention of the transistor as it allowed logic circuits to be implemented in a robust and modular way. The physical characteristics of semiconductor materials were the key to building these devices. We aim to present an analogous development for quantum computing by showing that quantum adiabatic transistors (as defined by Flammia et al.) are built upon the essential qualities of symmetry-protected (SP) quantum ordered phases in one dimension. Flammia et al. and Renes et al. have demonstrated schemes for universal adiabatic quantum computation using quantum adiabatic transistors described by interacting spin chain models with specifically chosen Hamiltonian terms. We show that these models can be understood as specific examples of the generic situation in which all SP phases lead to quantum computation on encoded edge degrees of freedom by adiabatically traversing a symmetric phase transition into a trivial symmetric phase. This point of view is advantageous as it allows us to readily see that the computational properties of a quantum adiabatic transistor arise from a phase of matter rather than due to carefully tuned interactions.

  12. Water-gel for gating graphene transistors.

    PubMed

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively. PMID:24773325

  13. GAP JUNCTION FUNCTION AND CANCER

    EPA Science Inventory

    Gap Junctions (GJs) provide cell-to-cell communication (GJIC) of essential metabolites and ions. Js allow tissues to average responses, clear waste products, and minimize the effects of xenobiotics by dilution and allowing steady-state catabolism. any chemicals can adversely affe...

  14. The Yolla Bolly junction revisited

    SciTech Connect

    Blake, M.C.; Jayko, A.S. ); Jones, D.L. . Dept. of Geology and Geophysics); Engebretson, D.C. . Dept. of Geology)

    1993-04-01

    West of Red Bluff, California, rocks of the northern Coast Ranges, Klamath-Sierra Nevada, and Great Valley provinces come together at what has been called the Yolla Bolly junction. Mapping of the Red Bluff and Willows 1:100,000 quadrangles has greatly clarified the enigmatic features of this complex area. Terranes of the Klamath Mountains and their Cretaceous sedimentary cover have been thrust northwestward over the Elder Creek terrane and Franciscan rocks, north of the left-lateral Cold Fork fault zone. The Condrey Mountain window (Franciscan Pickett Peak terrane) provides a measure of the magnitude of this thrusting (ca 90 km). South of the Cold Fork fault zone, the Franciscan and Elder Creek terranes were driven southeastward as tectonic wedges onto Sierran-Klamath basement. Timing of this scissor-tectonics is not constrained near the junction, but further north in southwest Oregon, Lower Eocene strata were deformed by overthrusting of the Klamath block whereas Upper Eocene strata overlap the thrust, indicating that thrusting occurred between about 52 and 60 Ma. Plate reconstructions for this time interval indicate the close proximity of the Kula-Farallon-North America triple junction and that old (ca 100 m.y.) Farallon lithosphere was being subducted north of the junction whereas to the south, very young (ca 10 m.y.) Kula plate was presumably obducted onto North America.

  15. Improved Solar-Cell Tunnel Junction

    NASA Technical Reports Server (NTRS)

    Daud, T.; Kachare, A.

    1986-01-01

    Efficiency of multiple-junction silicon solar cells increased by inclusion of p+/n+ tunnel junctions of highly doped GaP between component cells. Relatively low recombination velocity at GaP junction principal reason for recommending this material. Relatively wide band gap also helps increase efficiency by reducing optical losses.

  16. 27 CFR 9.164 - River Junction.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false River Junction. 9.164... River Junction. (a) Name. The name of the viticultural area described in this section is “River Junction.” (b) Approved maps. The appropriate maps for determining the boundaries of the River...

  17. 27 CFR 9.164 - River Junction.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false River Junction. 9.164... River Junction. (a) Name. The name of the viticultural area described in this section is “River Junction.” (b) Approved maps. The appropriate maps for determining the boundaries of the River...

  18. A hybrid model to calculate the forward delay time of heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Kumar, T.; Cahay, M.; Shi, S.; Roenker, K.; Stanchina, W. E.

    1995-07-01

    The forward delay time (τ F) of heterojunction bipolar transistors (HBTs) is calculated using a hybrid model of carrier transport. A rigorous quantum-mechanical treatment of electron tunneling and thermionic emission across the spike at the emitter-base junction is used to determine the energy of the electron flux injected into the base region. This flux is used as an initial distribution in a regional Monte Carlo simulator to model electron transport from base to sub-collector. In this paper, we estimate the base transit time using the impulse response technique and the collector delay time using the expression of Laux and Lai (IEEE Electron Device Letters, 11, 174, 1990). Improvements to the hybrid model proposed here to reduce some of the discrepancies between measured and calculated values of ƒ τ for some InAlAs/InGaAs and InP/InGaAs structures reported in the literature are discussed.

  19. Microwave damage susceptibility trend of a bipolar transistor as a function of frequency

    NASA Astrophysics Data System (ADS)

    Ma, Zhen-Yang; Chai, Chang-Chun; Ren, Xing-Rong; Yang, Yin-Tang; Chen, Bin; Song, Kun; Zhao, Ying-Bo

    2012-09-01

    We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n-n+ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.

  20. Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning.

    PubMed

    Nakaharai, Shu; Yamamoto, Mahito; Ueno, Keiji; Tsukagoshi, Kazuhito

    2016-06-15

    The polarity of the charge carriers injected through Schottky junctions of α-phase molybdenum ditelluride (α-MoTe2) and various metals was characterized. We found that the Fermi-level pinning in the metal/α-MoTe2 Schottky junction is so weak that the polarity of the carriers (electron or hole) injected from the junction can be controlled by the work function of the metals, in contrast to other transition metal dichalcogenides such as MoS2. From the estimation of the Schottky barrier heights, we obtained p-type carrier (hole) injection from a Pt/α-MoTe2 junction with a Schottky barrier height of 40 meV at the valence band edge. n-Type carrier (electron) injection from Ti/α-MoTe2 and Ni/α-MoTe2 junctions was also observed with Schottky barrier heights of 50 and 100 meV, respectively, at the conduction band edge. In addition, enhanced ambipolarity was demonstrated in a Pt-Ti hybrid contact with a unique structure specially designed for polarity-reversible transistors, in which Pt and Ti electrodes were placed in parallel for injecting both electrons and holes. PMID:27203118

  1. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  2. Molecular series-tunneling junctions.

    PubMed

    Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

    2015-05-13

    Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β. PMID:25871745

  3. Non-Faradaic Electrochemical Detection of Exocytosis from Mast and Chromaffin Cells Using Floating-Gate MOS Transistors.

    PubMed

    Jayant, Krishna; Singhai, Amit; Cao, Yingqiu; Phelps, Joshua B; Lindau, Manfred; Holowka, David A; Baird, Barbara A; Kan, Edwin C

    2015-01-01

    We present non-faradaic electrochemical recordings of exocytosis from populations of mast and chromaffin cells using chemoreceptive neuron MOS (CνMOS) transistors. In comparison to previous cell-FET-biosensors, the CνMOS features control (CG), sensing (SG) and floating gates (FG), allows the quiescent point to be independently controlled, is CMOS compatible and physically isolates the transistor channel from the electrolyte for stable long-term recordings. We measured exocytosis from RBL-2H3 mast cells sensitized by IgE (bound to high-affinity surface receptors FcεRI) and stimulated using the antigen DNP-BSA. Quasi-static I-V measurements reflected a slow shift in surface potential () which was dependent on extracellular calcium ([Ca]o) and buffer strength, which suggests sensitivity to protons released during exocytosis. Fluorescent imaging of dextran-labeled vesicle release showed evidence of a similar time course, while un-sensitized cells showed no response to stimulation. Transient recordings revealed fluctuations with a rapid rise and slow decay. Chromaffin cells stimulated with high KCl showed both slow shifts and extracellular action potentials exhibiting biphasic and inverted capacitive waveforms, indicative of varying ion-channel distributions across the cell-transistor junction. Our approach presents a facile method to simultaneously monitor exocytosis and ion channel activity with high temporal sensitivity without the need for redox chemistry. PMID:26686301

  4. Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors

    NASA Astrophysics Data System (ADS)

    Du, Hyewon; Kim, Taekwang; Shin, Somyeong; Kim, Dahye; Kim, Hakseong; Sung, Ji Ho; Lee, Myoung Jae; Seo, David H.; Lee, Sang Wook; Jo, Moon-Ho; Seo, Sunae

    2015-12-01

    We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS2 transistors. Ti-MoS2-graphene heterojunction transistors using both single-layer MoS2 (1M) and 4-layer MoS2 (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS2-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS2-Ti, which resulted in VDS polarity dependence of device parameters such as threshold voltage (VTH) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhanced device performance with higher on/off ratio and increased field-effect mobility (μFE) due to more sensitive Fermi level shift by gate voltage. Meanwhile, in the strongly accumulated regime, we observed opposing behavior depending on MoS2 thickness for both SG and BG contacts. Differential conductance (σd) of 1M increases with VDS irrespective of VDS polarity, while σd of 4M ceases monotonic growth at positive VDS values transitioning to ohmic-like contact formation. Nevertheless, the low absolute value of σd saturation of the 4M-graphene junction demonstrates that graphene electrode could be unfavorable for high current carrying transistors.

  5. Non-Faradaic Electrochemical Detection of Exocytosis from Mast and Chromaffin Cells Using Floating-Gate MOS Transistors

    PubMed Central

    Jayant, Krishna; Singhai, Amit; Cao, Yingqiu; Phelps, Joshua B.; Lindau, Manfred; Holowka, David A.; Baird, Barbara A.; Kan, Edwin C.

    2015-01-01

    We present non-faradaic electrochemical recordings of exocytosis from populations of mast and chromaffin cells using chemoreceptive neuron MOS (CνMOS) transistors. In comparison to previous cell-FET-biosensors, the CνMOS features control (CG), sensing (SG) and floating gates (FG), allows the quiescent point to be independently controlled, is CMOS compatible and physically isolates the transistor channel from the electrolyte for stable long-term recordings. We measured exocytosis from RBL-2H3 mast cells sensitized by IgE (bound to high-affinity surface receptors FcεRI) and stimulated using the antigen DNP-BSA. Quasi-static I-V measurements reflected a slow shift in surface potential () which was dependent on extracellular calcium ([Ca]o) and buffer strength, which suggests sensitivity to protons released during exocytosis. Fluorescent imaging of dextran-labeled vesicle release showed evidence of a similar time course, while un-sensitized cells showed no response to stimulation. Transient recordings revealed fluctuations with a rapid rise and slow decay. Chromaffin cells stimulated with high KCl showed both slow shifts and extracellular action potentials exhibiting biphasic and inverted capacitive waveforms, indicative of varying ion-channel distributions across the cell-transistor junction. Our approach presents a facile method to simultaneously monitor exocytosis and ion channel activity with high temporal sensitivity without the need for redox chemistry. PMID:26686301

  6. Tight Junction Proteins in Human Schwann Cell Autotypic Junctions

    PubMed Central

    Alanne, Maria H.; Pummi, Kati; Heape, Anthony M.; Grènman, Reidar; Peltonen, Juha; Peltonen, Sirkku

    2009-01-01

    Tight junctions (TJs) form physical barriers in various tissues and regulate paracellular transport of ions, water, and molecules. Myelinating Schwann cells form highly organized structures, including compact myelin, nodes of Ranvier, paranodal regions, Schmidt-Lanterman incisures, periaxonal cytoplasmic collars, and mesaxons. Autotypic TJs are formed in non-compacted myelin compartments between adjacent membrane lamellae of the same Schwann cell. Using indirect immunofluorescence and RT-PCR, we analyzed the expression of adherens junction (E-cadherin) and TJ [claudins, zonula occludens (ZO)-1, occludin] components in human peripheral nerve endoneurium, showing clear differences with published rodent profiles. Adult nerve paranodal regions contained E-cadherin, claudin-1, claudin-2, and ZO-1. Schmidt-Lanterman incisures contained E-cadherin, claudin-1, claudin-2, claudin-3, claudin-5, ZO-1, and occludin. Mesaxons contained E-cadherin, claudin-1, claudin-2, claudin-3, ZO-1, and occludin. None of the proteins studied were associated with nodal inter-Schwann cell junctions. Fetal nerve expression of claudin-1, claudin-3, ZO-1, and occludin was predominantly punctate, with a mesaxonal labeling pattern, but paranodal (ZO-1, claudin-3) and Schmidt-Lanterman incisure (claudins-1 and -3) expression profiles typical of compact myelin were visible by gestational week 37. The clear differences observed between human and published rodent nerve profiles emphasize the importance of human studies when translating the results of animal models to human diseases. (J Histochem Cytochem 57:523–529, 2009) PMID:19153196

  7. Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition.

    PubMed

    Tan, Haijie; Fan, Ye; Rong, Youmin; Porter, Ben; Lau, Chit Siong; Zhou, Yingqiu; He, Zhengyu; Wang, Shanshan; Bhaskaran, Harish; Warner, Jamie H

    2016-01-27

    We study the interactions in graphene/WS2 two-dimensional (2D) layered vertical heterostructures with variations in the areal coverage of graphene by the WS2. All 2D materials were grown by chemical vapor deposition and transferred layer by layer. Photoluminescence (PL) spectroscopy of WS2 on graphene showed PL quenching along with an increase in the ratio of exciton/trion emission, relative to WS2 on SiO2 surface, indicating a reduction in the n-type doping levels of WS2 as well as reduced radiative recombination quantum yield. Electrical measurements of a total of 220 graphene field effect transistors with different WS2 coverage showed double-Dirac points in the field effect measurements, where one is shifted closer toward the 0 V gate neutrality position due to the WS2 coverage. Photoirradiation of the WS2 on graphene region caused further Dirac point shifts, indicative of a reduction in the p-type doping levels of graphene, revealing that the photogenerated excitons in WS2 are split across the heterostructure by electron transfer from WS2 to graphene. Kelvin probe microscopy showed that regions of graphene covered with WS2 had a smaller work function and supports the model of electron transfer from WS2 to graphene. Our results demonstrate the formation of junctions within a graphene transistor through the spatial tuning of the work function of graphene using these 2D vertical heterostructures. PMID:26756350

  8. A miniature microcontroller curve tracing circuit for space flight testing transistors.

    PubMed

    Prokop, N; Greer, L; Krasowski, M; Flatico, J; Spina, D

    2015-02-01

    This paper describes a novel miniature microcontroller based curve tracing circuit, which was designed to monitor the environmental effects on Silicon Carbide Junction Field Effect Transistor (SiC JFET) device performance, while exposed to the low earth orbit environment onboard the International Space Station (ISS) as a resident experiment on the 7th Materials on the International Space Station Experiment (MISSE7). Specifically, the microcontroller circuit was designed to operate autonomously and was flown on the external structure of the ISS for over a year. This curve tracing circuit is capable of measuring current vs. voltage (I-V) characteristics of transistors and diodes. The circuit is current limited for low current devices and is specifically designed to test high temperature, high drain-to-source resistance SiC JFETs. The results of each I-V data set are transmitted serially to an external telemetered communication interface. This paper discusses the circuit architecture, its design, and presents example results. PMID:25725870

  9. High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts

    SciTech Connect

    Kang, Jiahao; Liu, Wei; Banerjee, Kaustav

    2014-03-03

    In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal to atomically-thin molybdenum disulphide (MoS{sub 2}), and high-performance field-effect transistors are experimentally demonstrated. In order to understand the physical nature of the interface and highlight the role of the various factors contributing to the Mo-MoS{sub 2} contacts, density functional theory (DFT) simulations are employed, which reveal that Mo can form high quality contact interface with monolayer MoS{sub 2} with zero tunnel barrier and zero Schottky barrier under source/drain contact, as well as an ultra-low Schottky barrier (0.1 eV) at source/drain-channel junction due to strong Fermi level pinning. In agreement with the DFT simulations, high mobility, high ON-current, and low contact resistance are experimentally demonstrated on both monolayer and multilayer MoS{sub 2} transistors using Mo contacts. The results obtained not only reveal the advantages of using Mo as a contact metal for MoS{sub 2} but also highlight the fact that the properties of contacts with 2-dimensional materials cannot be intuitively predicted by solely considering work function values and Schottky theory.

  10. Research Update: Molecular electronics: The single-molecule switch and transistor

    SciTech Connect

    Sotthewes, Kai; Heimbuch, René Kumar, Avijit; Zandvliet, Harold J. W.; Geskin, Victor

    2014-01-01

    In order to design and realize single-molecule devices it is essential to have a good understanding of the properties of an individual molecule. For electronic applications, the most important property of a molecule is its conductance. Here we show how a single octanethiol molecule can be connected to macroscopic leads and how the transport properties of the molecule can be measured. Based on this knowledge we have realized two single-molecule devices: a molecular switch and a molecular transistor. The switch can be opened and closed at will by carefully adjusting the separation between the electrical contacts and the voltage drop across the contacts. This single-molecular switch operates in a broad temperature range from cryogenic temperatures all the way up to room temperature. Via mechanical gating, i.e., compressing or stretching of the octanethiol molecule, by varying the contact's interspace, we are able to systematically adjust the conductance of the electrode-octanethiol-electrode junction. This two-terminal single-molecule transistor is very robust, but the amplification factor is rather limited.

  11. Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

    SciTech Connect

    Li, Wei; Zhang, Qin; Kirillov, Oleg A.; Levin, Igor; Richter, Curt A.; Gundlach, David J.; Nguyen, N. V. E-mail: liangxl@pku.edu.cn; Bijesh, R.; Datta, S.; Liang, Yiran; Peng, Lian-Mao; Liang, Xuelei E-mail: liangxl@pku.edu.cn

    2014-11-24

    We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al{sub 2}O{sub 3}/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al{sub 2}O{sub 3} conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al{sub 2}O{sub 3} valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.

  12. Developing the OEIC solutions using two section light-emitting transistor

    NASA Astrophysics Data System (ADS)

    Liang, Shan-Fong; Hsu, Yuan-Fu; Cheng, Gong-Sheng; Wu, Chao-Hsin

    2016-02-01

    An integrated on-chip optical device composed of a multiple quantum-well light-emitter and photodetector in the lightemitting transistor (LET) platform is fabricated. The two devices are 400 μm in length and electrically isolated by dry etching with 4.9 μm gap. The two facets are formed by cleaving for optical output. In this report, we discuss the characteristics of the two-section device and demonstrate the optical detection by the heterojunction phototransistor (HPT) under different operation points (IB and VCE) and injected optical powers. The collector current of the HPT is 74.88 mA without illumination and 83.87 mA under illumination of 7.46μW at VCE = 3 V and IB = 12 mA, which exhibits 12% increment. The responsivity of the InGaP/GaAs HPT can reach to 711.74 A/W. At the electrical modulation bandwidth of phototransistor fT is enhanced from 1.4 GHz to 1.51 GHz under illumination. This is attributed to the Franz-Keldysh photon-assisted absorption at base-collector junction of light-emitting transistor, which produces additional holes and electrons to enhance the current gain. Through the analysis of small-signal equivalent circuit models, we can show the transit time by de-embedding the circuit parasitic effect. Extracting those parameters can clearly know the thermionic emission lifetime in the quantum well.

  13. Ureteropelvic junction disease: diagnostic imaging.

    PubMed

    Maresca, Giulia; Maggi, Fabio; Valentini, Viola

    2002-01-01

    Ureteropelvic junction disease is very frequent in pediatric age. Diagnosis is usually established on sonography; in most cases it is prenatal and confirmed at birth. On sonography, hydronephrosis and the site of obstruction is identified with morphofunctional information on renal parenchyma. In the past, urography was the reference examination for ureteropelvic junction disease, but its use is limited in pediatrics especially in prenatal study for radioprotection as well as for the limited glomerular filtration of neonatal kidney. CT and MRI as second level examinations do not find many indications, while angioscintigraphy is largely used to acquire functional data and, in combination with sonography, is basic for diagnosis as well as in follow-up of operated patients. PMID:12696256

  14. Gap junctions as electrical synapses.

    PubMed

    Bennett, M V

    1997-06-01

    Gap junctions are the morphological substrate of one class of electrical synapse. The history of the debate on electrical vs. chemical transmission is instructive. One lesson is that Occam's razor sometimes cuts too deep; the nervous system does its operations in a number of different ways and a unitarian approach can lead one astray. Electrical synapses can do many things that chemical synapses can do, and do them just as slowly. More intriguing are the modulatory actions that chemical synapses can have on electrical synapses. Voltage dependence provides an important window on structure function relations of the connexins, even where the dependence may have no physiological role. The new molecular approaches will greatly advance our knowledge of where gap junctions occur and permit experimental manipulation with high specificity. PMID:9278865

  15. Josephson junctions and dark energy

    NASA Astrophysics Data System (ADS)

    Jetzer, Philippe; Straumann, Norbert

    2006-08-01

    In a recent paper Beck and Mackey [C. Beck, M.C. Mackey, astro-ph/0603397] argue that the argument we gave in our paper [Ph. Jetzer, N. Straumann, Phys. Lett. B 606 (2005) 77, astro-ph/0411034] to disprove their claim that dark energy can be discovered in the Lab through noise measurements of Josephson junctions is incorrect. In particular, they emphasize that the measured noise spectrum in Josephson junctions is a consequence of the fluctuation dissipation theorem, while our argument was based on equilibrium statistical mechanics. In this note we show that the fluctuation dissipation relation does not depend upon any shift of vacuum (zero-point) energies, and therefore, as already concluded in our previous paper, dark energy has nothing to do with the proposed measurements.

  16. Seebeck effect in molecular junctions.

    PubMed

    Zimbovskaya, Natalya A

    2016-05-11

    Advances in the fabrication and characterization of nanoscale systems presently allow for a better understanding of their thermoelectric properties. As is known, the building blocks of thermoelectricity are the Peltier and Seebeck effects. In the present work we review results of theoretical studies of the Seebeck effect in single-molecule junctions and similar systems. The behavior of thermovoltage and thermopower in these systems is controlled by several factors including the geometry of molecular bridges, the characteristics of contacts between the bridge and the electrodes, the strength of the Coulomb interactions between electrons on the bridge, and of electron-phonon interactions. We describe the impact of these factors on the thermopower. Also, we discuss a nonlinear Seebeck effect in molecular junctions. PMID:27073108

  17. Seebeck effect in molecular junctions

    NASA Astrophysics Data System (ADS)

    Zimbovskaya, Natalya A.

    2016-05-01

    Advances in the fabrication and characterization of nanoscale systems presently allow for a better understanding of their thermoelectric properties. As is known, the building blocks of thermoelectricity are the Peltier and Seebeck effects. In the present work we review results of theoretical studies of the Seebeck effect in single-molecule junctions and similar systems. The behavior of thermovoltage and thermopower in these systems is controlled by several factors including the geometry of molecular bridges, the characteristics of contacts between the bridge and the electrodes, the strength of the Coulomb interactions between electrons on the bridge, and of electron–phonon interactions. We describe the impact of these factors on the thermopower. Also, we discuss a nonlinear Seebeck effect in molecular junctions.

  18. Thermoelectric efficiency of molecular junctions

    NASA Astrophysics Data System (ADS)

    Perroni, C. A.; Ninno, D.; Cataudella, V.

    2016-09-01

    Focus of the review is on experimental set-ups and theoretical proposals aimed to enhance thermoelectric performances of molecular junctions. In addition to charge conductance, the thermoelectric parameter commonly measured in these systems is the thermopower, which is typically rather low. We review recent experimental outcomes relative to several junction configurations used to optimize the thermopower. On the other hand, theoretical calculations provide estimations of all the thermoelectric parameters in the linear and non-linear regime, in particular of the thermoelectric figure of merit and efficiency, completing our knowledge of molecular thermoelectricity. For this reason, the review will mainly focus on theoretical studies analyzing the role of not only electronic, but also of the vibrational degrees of freedom. Theoretical results about thermoelectric phenomena in the coherent regime are reviewed focusing on interference effects which play a significant role in enhancing the figure of merit. Moreover, we review theoretical studies including the effects of molecular many-body interactions, such as electron–vibration couplings, which typically tend to reduce the efficiency. Since a fine tuning of many parameters and coupling strengths is required to optimize the thermoelectric conversion in molecular junctions, new theoretically proposed set-ups are discussed in the conclusions.

  19. Thermoelectric efficiency of molecular junctions.

    PubMed

    Perroni, C A; Ninno, D; Cataudella, V

    2016-09-21

    Focus of the review is on experimental set-ups and theoretical proposals aimed to enhance thermoelectric performances of molecular junctions. In addition to charge conductance, the thermoelectric parameter commonly measured in these systems is the thermopower, which is typically rather low. We review recent experimental outcomes relative to several junction configurations used to optimize the thermopower. On the other hand, theoretical calculations provide estimations of all the thermoelectric parameters in the linear and non-linear regime, in particular of the thermoelectric figure of merit and efficiency, completing our knowledge of molecular thermoelectricity. For this reason, the review will mainly focus on theoretical studies analyzing the role of not only electronic, but also of the vibrational degrees of freedom. Theoretical results about thermoelectric phenomena in the coherent regime are reviewed focusing on interference effects which play a significant role in enhancing the figure of merit. Moreover, we review theoretical studies including the effects of molecular many-body interactions, such as electron-vibration couplings, which typically tend to reduce the efficiency. Since a fine tuning of many parameters and coupling strengths is required to optimize the thermoelectric conversion in molecular junctions, new theoretically proposed set-ups are discussed in the conclusions. PMID:27420149

  20. Kirigami Graphene Transistors for Biological Sensing

    NASA Astrophysics Data System (ADS)

    Reynolds, Michael; Brown, Morgan; McGill, Kathryn; Davidson, Patricia; Lammerding, Jan; Minot, Ethan; Goldberg, Jesse; McEuen, Paul

    As flexible, locally amplifying probes, graphene transistors have potential applications in biological sensing, particularly for read-out of extracellular potentials. We present here electrolyte-gating measurements of stretchable graphene transistors aimed at exploring this application. The graphene is etched into patterns inspired by the Japanese paper art of kirigami to permit in-plane stretching. Using a technique developed in our group for manipulating these devices in solution, we can maneuver and stretch devices in an electrolyte solution while monitoring their electrical response. These devices show proximity-dependent gating to voltages on an additional small metal probe near the device, and we quantify the nature and sensitivity of this response. The flexibility of these devices makes them promising as ``wearable'' electronics for cells, and we present early results on interactions between graphene devices and cardiomyocyte cells.

  1. Flexible Organic Transistors with Controlled Nanomorphology.

    PubMed

    Lee, Byoung Hoon; Hsu, Ben B Y; Patel, Shrayesh N; Labram, John; Luo, Chan; Bazan, Guillermo C; Heeger, Alan J

    2016-01-13

    We report the controlled nanomorphology of semiconducting polymers on chemically and mechanically stable nanogrooved polymer substrates. By employing silicon dioxide thin films with finely adjusted thicknesses on nanogrooved polymer substrates, semiconducting polymer thin films oriented and aligned along the nanogrooves were obtained. Organic field-effect transistors (OFETs) fabricated from the oriented semiconducting polymer, poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT), yielded saturation hole mobilities as high as 19.3 cm(2) V(-1 )s(-1), and the flexible "plastic" transistors demonstrated excellent mechanical stability under various bending conditions. These results represent important progress for solution-processed flexible OFETs and demonstrate that directed self-assembly of semiconducting polymers can be achieved by soft nanostructures. PMID:26645364

  2. Spin-Valve Photo-Transistor

    NASA Astrophysics Data System (ADS)

    Huang, Biqin; Altfeder, Igor; Appelbaum, Ian

    2007-03-01

    The Spin-Valve Photo-Transistor is a semiconductor-ferromagnetic metal multilayer-semiconductor transistor operated by photo- exciting hot electrons in the emitter semiconductor into a Schottky collector. We have realized this device using a vacuum- bonded float-zone Si/multilayer/n-InP structure. To distinguish the emitter interband-excited component of collector current from base/collector internal photoemission, we use a lockin spectroscopy sensitive only to the magnetocurrent. Our experimental results indicate a pathway to improve the magnetocurrent of a related device, the Spin- Valve Photo-Diode, by increasing the fraction of hot electron current that travels through both layers of the ferromagnetic spin-valve.

  3. Radiation effects on power transistor performance

    NASA Technical Reports Server (NTRS)

    Frasca, Albert J.

    1987-01-01

    The D60T, D62T, and D75T transistors in the nuclear reactor were irradiated with bias voltage and high current I sub c vs. V sub ec curves were obtained to evaluate gain degradation at high power levels. Pre- and post-irradiation high current switching tests were performed to evaluate the response. The gamma ray damage work done at Sandia was correlated with the neutron work done at the O.S.U. reactor with the above specified transistors. Theoretical analyses of damage and electrical performance were conducted in terms of semiconductor physics. The experimental high current pulser was improved in order to measure switching time changes which are less than one microsecond at currents of 100 to 200 amperes for in-situ testing.

  4. Field-effect transistors (2nd revised and enlarged edition)

    NASA Astrophysics Data System (ADS)

    Bocharov, L. N.

    The design, principle of operation, and principal technical characteristics of field-effect transistors produced in the USSR are described. Problems related to the use of field-effect transistors in various radioelectronic devices are examined, and tables of parameters and mean statistical characteristics are presented for the main types of field-effect transistors. Methods for calculating various circuit components are discussed and illustrated by numerical examples.

  5. High-Speed, high-power, switching transistor

    NASA Technical Reports Server (NTRS)

    Carnahan, D.; Ohu, C. K.; Hower, P. L.

    1979-01-01

    Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.

  6. Hybrid light emitting transistors (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Muhieddine, Khalid; Ullah, Mujeeb; Namdas, Ebinazar B.; Burn, Paul L.

    2015-10-01

    Organic light-emitting diodes (OLEDs) are well studied and established in current display applications. Light-emitting transistors (LETs) have been developed to further simplify the necessary circuitry for these applications, combining the switching capabilities of a transistor with the light emitting capabilities of an OLED. Such devices have been studied using mono- and bilayer geometries and a variety of polymers [1], small organic molecules [2] and single crystals [3] within the active layers. Current devices can often suffer from low carrier mobilities and most operate in p-type mode due to a lack of suitable n-type organic charge carrier materials. Hybrid light-emitting transistors (HLETs) are a logical step to improve device performance by harnessing the charge carrier capabilities of inorganic semiconductors [4]. We present state of the art, all solution processed hybrid light-emitting transistors using a non-planar contact geometry [1, 5]. We will discuss HLETs comprised of an inorganic electron transport layer prepared from a sol-gel of zinc tin oxide and several organic emissive materials. The mobility of the devices is found between 1-5 cm2/Vs and they had on/off ratios of ~105. Combined with optical brightness and efficiencies of the order of 103 cd/m2 and 10-3-10-1 %, respectively, these devices are moving towards the performance required for application in displays. [1] M. Ullah, K. Tandy, S. D. Yambem, M. Aljada, P. L. Burn, P. Meredith, E. B. Namdas., Adv. Mater. 2013, 25, 53, 6213 [2] R. Capelli, S. Toffanin, G. Generali, H. Usta, A. Facchetti, M. Muccini, Nature Materials 2010, 9, 496 [3] T. Takenobu, S. Z. Bisri, T. Takahashi, M. Yahiro, C. Adachi, Y. Iwasa, Phys. Rev. Lett. 2008, 100, 066601 [4] H. Nakanotani, M. Yahiro, C. Adachi, K. Yano, Appl. Phys. Lett. 2007, 90, 262104 [5] K. Muhieddine, M. Ullah, B. N. Pal, P. Burn E. B. Namdas, Adv. Mater. 2014, 26,37, 6410

  7. Fully overheated single-electron transistor.

    PubMed

    Laakso, M A; Heikkilä, T T; Nazarov, Yuli V

    2010-05-14

    We consider the fully overheated single-electron transistor, where the heat balance is determined entirely by electron transfers. We find three distinct transport regimes corresponding to cotunneling, single-electron tunneling, and a competition between the two. We find an anomalous sensitivity to temperature fluctuations at the crossover between the two latter regimes that manifests in an exceptionally large Fano factor of current noise. PMID:20866990

  8. Organic transistors for electrophysiology (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Rivnay, Jonathan

    2015-10-01

    Efficient local transduction of biological signals is of critical importance for mapping brain activity and diagnosing pathological conditions. Traditional devices used to record electrophysiological signals are passive electrodes that require (pre)amplification with downstream electronics. Organic electrochemical transistors (OECTs) that utilize conducting polymer films as the channel have shown considerable promise as amplifying transducers due to their stability in aqueous conditions and high transconductance (>3 mS). The materials properties and physics of such transistors, however, remains largely unexplored thus limiting their potential. Here we show that the uptake of ionic charge from an electrolyte into a poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) OECT channel leads to a dependence of the effective capacitance on the entire volume of the film. Subsequently, device transconductance and time response vary with channel thickness, a defining characteristic that differentiates OECTs from field effect transistors, and provides a new degree of freedom for device engineering. Using this understanding we tailor OECTs for a variety of low (1-100 Hz) and high (1-10 kHz) frequency applications, including human electroencephalography, where high transconductance devices impart richer signal content without the need for additional amplification circuitry. We also show that the materials figure of merit OECTs is the product of hole mobility and volumetric capacitance of the channel, leading to design rules for novel high performance materials.

  9. Graphene-Dielectric Integration for Graphene Transistors

    PubMed Central

    Liao, Lei; Duan, Xiangfeng

    2010-01-01

    Graphene is emerging as an interesting electronic material for future electronics due to its exceptionally high carrier mobility and single-atomic thickness. Graphene-dielectric integration is of critical importance for the development of graphene transistors and a new generation of graphene based electronics. Deposition of dielectric materials onto graphene is of significant challenge due to the intrinsic material incompatibility between pristine graphene and dielectric oxide materials. Here we review various strategies being researched for graphene-dielectric integration. Physical vapor deposition (PVD) can be used to directly deposit dielectric materials on graphene, but often introduces significant defects into the monolayer of carbon lattice; Atomic layer deposition (ALD) process has also been explored to to deposit high-κ dielectrics on graphene, which however requires functionalization of graphene surface with reactive groups, inevitably leading to a significant degradation in carrier mobilities; Using naturally oxidized thin aluminum or polymer as buffer layer for dielectric deposition can mitigate the damages to graphene lattice and improve the carrier mobility of the resulted top-gated transistors; Lastly, a physical assembly approach has recently been explored to integrate dielectric nanostructures with graphene without introducing any appreciable defects, and enabled top-gated graphene transistors with the highest carrier mobility reported to date. We will conclude with a brief summary and perspective on future opportunities. PMID:21278913

  10. Large Area Printing of Organic Transistors

    NASA Astrophysics Data System (ADS)

    Blanchet, Graciela B.; Rogers, J. A.; Lefenfeld, M.; Fincher, C. R.; Loo, Jueh-Lin

    2003-03-01

    Organic electronic systems offer the advantage of lightweight, mechanical flexibility and large area coverage at potentially lower manufacturing cost. Although the production of functioning plastic transistors using approaches such as ink jet, screen printing and stamping, has been described in the literature, no one-transistor layer has yet been fabricated using a technique appropriate for their commercial ization. The solution processability of many organics may ultimately allow for the printing of electronic devices in a printing press at high speeds and in a reel to reel configuration. However, designing chemically compatible solutions to be printed sequentially represents a significant technical barrier to achieving all-printed plastic electronic systems. The work presented here represents a step change in the fabrication of organic electronic devices. We introduce thermal transfer, a non-lithographic technique that enables printing multi-layer electronics devices via a dry (i.e. solvent-less) additive process. This high-speed method is capable of patterning a range of organic materials over large areas ( 1 m2 ) with micron dimensions and excellent electrical performance. The 0.5 m2 transistor array backplane printed via thermal transfer represent the most advanced demonstration of a novel printing technology applied to the fabrication of large area integrated electronic devices. Dry transfer printing may provide a practical route to realizing the benefits of plastic materials for electronics.

  11. Two-dimensional materials and their prospects in transistor electronics.

    PubMed

    Schwierz, F; Pezoldt, J; Granzner, R

    2015-05-14

    During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided. PMID:25898786

  12. A PWM transistor inverter for an ac electric vehicle drive

    NASA Technical Reports Server (NTRS)

    Slicker, J. M.

    1981-01-01

    A prototype system consisting of closely integrated motor, inverter, and transaxle has been built in order to demonstrate the feasibility of a three-phase ac transistorized inverter for electric vehicle applications. The microprocessor-controlled inverter employs monolithic power transistors to drive an oil-cooled, three-phase induction traction motor at a peak output power of 30 kW from a 144 V battery pack. Transistor safe switching requirements are discussed, and a circuit is presented for recovering trapped snubber inductor energy at transistor turn-off.

  13. Npn double heterostructure bipolar transistor with ingaasn base region

    DOEpatents

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  14. A circuit model for defective bilayer graphene transistors

    NASA Astrophysics Data System (ADS)

    Umoh, Ime J.; Moktadir, Zakaria; Hang, Shuojin; Kazmierski, Tom J.; Mizuta, Hiroshi

    2016-05-01

    This paper investigates the behaviour of a defective single-gate bilayer graphene transistor. Point defects were introduced into pristine graphene crystal structure using a tightly focused helium ion beam. The transfer characteristics of the exposed transistors were measured ex-situ for different defect concentrations. The channel peak resistance increased with increasing defect concentration whilst the on-off ratio showed a decreasing trend for both electrons and holes. To understand the electrical behaviour of the transistors, a circuit model for bilayer graphene is developed which shows a very good agreement when validated against experimental data. The model allowed parameter extraction of bilayer transistor and can be implemented in circuit level simulators.

  15. High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

    NASA Astrophysics Data System (ADS)

    Chen, Zuhui; Jie, Bin B.; Sah, Chih-Tang

    2008-11-01

    Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density NET (charge states 0 and -1), dopant impurity concentration PIM, oxide thickness Xox, forward source/drain junction bias VPN, and transistor temperature T. It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.

  16. Electrical properties of single CuO nanowires for device fabrication: Diodes and field effect transistors

    SciTech Connect

    Florica, Camelia; Costas, Andreea; Boni, Andra Georgia; Negrea, Raluca; Preda, Nicoleta E-mail: encu@infim.ro; Pintilie, Lucian; Enculescu, Ionut E-mail: encu@infim.ro; Ion, Lucian

    2015-06-01

    High aspect ratio CuO nanowires are synthesized by a simple and scalable method, thermal oxidation in air. The structural, morphological, optical, and electrical properties of the semiconducting nanowires were studied. Au-Ti/CuO nanowire and Pt/CuO nanowire electrical contacts were investigated. A dominant Schottky mechanism was evidenced in the Au-Ti/CuO nanowire junction and an ohmic behavior was observed for the Pt/CuO nanowire junction. The Pt/CuO nanowire/Pt structure allows the measurements of the intrinsic transport properties of the single CuO nanowires. It was found that an activation mechanism describes the behavior at higher temperatures, while a nearest neighbor hopping transport mechanism is characteristic at low temperatures. This was also confirmed by four-probe resistivity measurements on the single CuO nanowires. By changing the metal/semiconductor interface, devices such as Schottky diodes and field effect transistors based on single CuO p-type nanowire semiconductor channel are obtained. These devices are suitable for being used in various electronic circuits where their size related properties can be exploited.

  17. Degradation of InGaAs/InP double heterojunction bipolar transistors under electron irradiation

    SciTech Connect

    Bandyopadhyay, A.; Subramanian, S.; Chandrasekhar, S.; Dentai, A.G.; Goodnick, S.M.

    1999-05-01

    The dc characteristics of InGaAs/InP double heterojunction bipolar transistors (DHBT`s) are studied under high-energy ({approximately}1 MeV) electron irradiation up to a fluence of 14.8 {times} 10{sup 15} electrons/cm{sup 2}. The devices show an increase in common-emitter current gain (h{sub fe}) at low levels of dose (<10{sup 15} electrons/cm{sup 2}) and a gradual decrease in h{sub fe} and an increase in output conductance for higher doses. The decrease in h{sub fe} is as much as {approximately}80% at low base currents ({approximately}10 {micro}A) after a cumulative dose of 14.8 {times} 10{sup 15} electrons/cm{sup 2}. The observed degradation effects in collector current-voltage (I-V) characteristics are studied quantitatively using a simple SPICE-like device model. The overall decrease in h{sub fe} is attributed to increased recombination in the emitter-base junction region caused by radiation-induced defects. The defects introduced in the collector-base junction region are believed to be responsible for the observed increase in the output conductance.

  18. Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. A.; Salupo, Carl S.; Matus, Lawrence G.

    1993-01-01

    This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

  19. Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

    NASA Astrophysics Data System (ADS)

    Lin, Guangyang; Wang, Chen; Li, Cheng; Chen, Chaowen; Huang, Zhiwei; Huang, Wei; Chen, Songyan; Lai, Hongkai; Jin, Chunyan; Sun, Jiaming

    2016-05-01

    Strong room temperature electroluminescence with two emission peaks at around 0.786 eV and 0.747 eV from Ge n+/p shallow junctions was reported. The peak at around 0.786 eV comes from direct band luminescence (DBL) in n + Ge regions, while the peak fixing at 0.747 eV is resulted from defects induced by ion implantation. Heavy n-type doping in Ge renders realization of strong defect-related luminescence (DRL) feasible. The peak intensity ratio of DRL/DBL decreases with increase of injection current since more electrons are filled in Γ valley. Above all, the Ge n+/p shallow junction is fully compatible with the source and drain in Ge metal-oxide-semiconductor field effect transistors.

  20. Theory and experiments of electron-hole recombination at silicon/silicon dioxide interface traps and tunneling in thin oxide MOS transistors

    NASA Astrophysics Data System (ADS)

    Cai, Jin

    2000-10-01

    Surface recombination and channel have dominated the electrical characteristics, performance and reliability of p/n junction diodes and transistors. This dissertation uses a sensitive direct-current current voltage (DCIV) method to measure base terminal currents (IB) modulated by the gate bias (VGB) and forward p/n junction bias (VPN) in a MOS transistor (MOST). Base terminal currents originate from electron-hole recombination at Si/SiO2 interface traps. Fundamental theories which relate DCIV characteristics to device and material parameters are presented. Three theory-based applications are demonstrated on both the unstressed as well as hot-carrier-stressed MOSTs: (1) determination of interface trap density and energy levels, (2) spatial profile of interface traps in the drain/base junction-space-charge region and in the channel region, and (3) determination of gate oxide thickness and impurity doping concentrations. The results show that interface trap energy levels are discrete, which is consistent with those from silicon dangling bonds; in unstressed MOS transistors interface trap density in the channel region rises sharply toward source and drain, and after channel-hot-carrier stress, interface trap density increases mostly in the junction space-charge region. As the gate oxide thins below 3 nm, the gate oxide leakage current via quantum mechanical tunneling becomes significant. A gate oxide tunneling theory which refined the traditional WKB tunneling probability is developed for modeling tunneling currents at low electric fields through a trapezoidal SiO2 barrier. Correlation with experimental data on thin oxide MOSTs reveals two new results: (1) hole tunneling dominates over electron tunneling in p+gate p-channel MOSTs, and (2) the small gate/drain overlap region passes higher tunneling currents than the channel region under depletion to flatband gate voltages. The good theory-experimental correlation enables the extraction of impurity doping concentrations

  1. A Single-Level Tunnel Model to Account for Electrical Transport through Single Molecule- and Self-Assembled Monolayer-based Junctions

    PubMed Central

    Garrigues, Alvar R.; Yuan, Li; Wang, Lejia; Mucciolo, Eduardo R.; Thompon, Damien; del Barco, Enrique; Nijhuis, Christian A.

    2016-01-01

    We present a theoretical analysis aimed at understanding electrical conduction in molecular tunnel junctions. We focus on discussing the validity of coherent versus incoherent theoretical formulations for single-level tunneling to explain experimental results obtained under a wide range of experimental conditions, including measurements in individual molecules connecting the leads of electromigrated single-electron transistors and junctions of self-assembled monolayers (SAM) of molecules sandwiched between two macroscopic contacts. We show that the restriction of transport through a single level in solid state junctions (no solvent) makes coherent and incoherent tunneling formalisms indistinguishable when only one level participates in transport. Similar to Marcus relaxation processes in wet electrochemistry, the thermal broadening of the Fermi distribution describing the electronic occupation energies in the electrodes accounts for the exponential dependence of the tunneling current on temperature. We demonstrate that a single-level tunnel model satisfactorily explains experimental results obtained in three different molecular junctions (both single-molecule and SAM-based) formed by ferrocene-based molecules. Among other things, we use the model to map the electrostatic potential profile in EGaIn-based SAM junctions in which the ferrocene unit is placed at different positions within the molecule, and we find that electrical screening gives rise to a strongly non-linear profile across the junction. PMID:27216489

  2. A Single-Level Tunnel Model to Account for Electrical Transport through Single Molecule- and Self-Assembled Monolayer-based Junctions.

    PubMed

    Garrigues, Alvar R; Yuan, Li; Wang, Lejia; Mucciolo, Eduardo R; Thompon, Damien; Del Barco, Enrique; Nijhuis, Christian A

    2016-01-01

    We present a theoretical analysis aimed at understanding electrical conduction in molecular tunnel junctions. We focus on discussing the validity of coherent versus incoherent theoretical formulations for single-level tunneling to explain experimental results obtained under a wide range of experimental conditions, including measurements in individual molecules connecting the leads of electromigrated single-electron transistors and junctions of self-assembled monolayers (SAM) of molecules sandwiched between two macroscopic contacts. We show that the restriction of transport through a single level in solid state junctions (no solvent) makes coherent and incoherent tunneling formalisms indistinguishable when only one level participates in transport. Similar to Marcus relaxation processes in wet electrochemistry, the thermal broadening of the Fermi distribution describing the electronic occupation energies in the electrodes accounts for the exponential dependence of the tunneling current on temperature. We demonstrate that a single-level tunnel model satisfactorily explains experimental results obtained in three different molecular junctions (both single-molecule and SAM-based) formed by ferrocene-based molecules. Among other things, we use the model to map the electrostatic potential profile in EGaIn-based SAM junctions in which the ferrocene unit is placed at different positions within the molecule, and we find that electrical screening gives rise to a strongly non-linear profile across the junction. PMID:27216489

  3. A Single-Level Tunnel Model to Account for Electrical Transport through Single Molecule- and Self-Assembled Monolayer-based Junctions

    NASA Astrophysics Data System (ADS)

    Garrigues, Alvar R.; Yuan, Li; Wang, Lejia; Mucciolo, Eduardo R.; Thompon, Damien; Del Barco, Enrique; Nijhuis, Christian A.

    2016-05-01

    We present a theoretical analysis aimed at understanding electrical conduction in molecular tunnel junctions. We focus on discussing the validity of coherent versus incoherent theoretical formulations for single-level tunneling to explain experimental results obtained under a wide range of experimental conditions, including measurements in individual molecules connecting the leads of electromigrated single-electron transistors and junctions of self-assembled monolayers (SAM) of molecules sandwiched between two macroscopic contacts. We show that the restriction of transport through a single level in solid state junctions (no solvent) makes coherent and incoherent tunneling formalisms indistinguishable when only one level participates in transport. Similar to Marcus relaxation processes in wet electrochemistry, the thermal broadening of the Fermi distribution describing the electronic occupation energies in the electrodes accounts for the exponential dependence of the tunneling current on temperature. We demonstrate that a single-level tunnel model satisfactorily explains experimental results obtained in three different molecular junctions (both single-molecule and SAM-based) formed by ferrocene-based molecules. Among other things, we use the model to map the electrostatic potential profile in EGaIn-based SAM junctions in which the ferrocene unit is placed at different positions within the molecule, and we find that electrical screening gives rise to a strongly non-linear profile across the junction.

  4. String junction as a baryonic constituent

    NASA Astrophysics Data System (ADS)

    Kalashnikova, Yu. S.; Nefediev, A. V.

    1996-02-01

    We extend the model for QCD string with quarks to consider the Mercedes Benz string configuration describing the three-quark baryon. Under the assumption of adiabatic separation of quark and string junction motion we formulate and solve the classical equation of motion for the junction. We dare to quantize the motion of the junction, and discuss the impact of these modes on the baryon spectra.

  5. String junctions and holographic interfaces

    SciTech Connect

    Chiodaroli, Marco; Gutperle, Michael; Hung, Ling-Yan; Krym, Darya

    2011-01-15

    In this paper we study half-BPS type IIB supergravity solutions with multiple AdS{sub 3}xS{sup 3}xM{sub 4} asymptotic regions, where M{sub 4} is either T{sup 4} or K{sub 3}. These solutions were first constructed in [M. Chiodaroli, M. Gutperle, and D. Krym, J. High Energy Phys. 02 (2010) 066.] and have geometries given by the warped product of AdS{sub 2}xS{sup 2}xM{sub 4} over {Sigma}, where {Sigma} is a Riemann surface. We show that the holographic boundary has the structure of a star graph, i.e. n half-lines joined at a point. The attractor mechanism and the relation of the solutions to junctions of self-dual strings in six-dimensional supergravity are discussed. The solutions of [M. Chiodaroli, M. Gutperle, and D. Krym, J. High Energy Phys. 02 (2010) 066.] are constructed introducing two meromorphic and two harmonic functions defined on {Sigma}. We focus our analysis on solutions corresponding to junctions of three different conformal field theories and show that the conditions for having a solution charged only under Ramond-Ramond three-form fields reduce to relations involving the positions of the poles and the residues of the relevant harmonic and meromorphic functions. The degeneration limit in which some of the poles collide is analyzed in detail. Finally, we calculate the holographic boundary entropy for a junction of three CFTs and obtain a simple expression in terms of poles and residues.

  6. Thermoelectric effects in nanoscale junctions.

    PubMed

    Dubi, Yonatan; Di Ventra, Massimiliano

    2009-01-01

    Despite its intrinsic nonequilibrium origin, thermoelectricity in nanoscale systems is usually described within a static scattering approach which disregards the dynamical interaction with the thermal baths that maintain energy flow. Using the theory of open quantum systems, we show instead that unexpected properties, such as a resonant structure and large sign sensitivity, emerge if the nonequilibrium nature of this problem is considered. Our approach also allows us to define and study a local temperature, which shows hot spots and oscillations along the system according to the coupling of the latter to the electrodes. This demonstrates that Fourier's lawa paradigm of statistical mechanicsis generally violated in nanoscale junctions. PMID:19072125

  7. Method for shallow junction formation

    DOEpatents

    Weiner, Kurt H.

    1996-01-01

    A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.

  8. Method for shallow junction formation

    DOEpatents

    Weiner, K.H.

    1996-10-29

    A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.

  9. Generalization of Moll Ross relations for heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Mohammad, S. Noor

    2002-04-01

    Moll-Ross relations for the current flow through the base region of a bipolar transistor, and for the base transit time, have been generalized for heterojunction bipolar transistors with a nonuniform energy bandgap in the base region. The effect of both heavy doping and carrier degeneracy has been taken into account.

  10. The Ebers-Moll model for magnetic bipolar transistors

    NASA Astrophysics Data System (ADS)

    Fabian, Jaroslav; Žutić, Igor

    2005-03-01

    The equivalent electrical circuit of the Ebers-Moll-type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A classification scheme of the operating modes of magnetic bipolar transistors in the low bias regime is presented.

  11. Advanced Organic Permeable-Base Transistor with Superior Performance.

    PubMed

    Klinger, Markus P; Fischer, Axel; Kaschura, Felix; Scholz, Reinhard; Lüssem, Björn; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Kasemann, Daniel; Leo, Karl

    2015-12-16

    An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies. PMID:26484500

  12. Method for double-sided processing of thin film transistors

    DOEpatents

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2008-04-08

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  13. Organic thin film transistors: from active materials to novel applications

    NASA Astrophysics Data System (ADS)

    Torsi, L.; Cioffi, N.; Di Franco, C.; Sabbatini, L.; Zambonin, P. G.; Bleve-Zacheo, T.

    2001-08-01

    In this paper, a bird's eye view of most of the organic materials employed as n-channel and p-channel transistor active layers is given along with the relevant device performances; organic thin film transistors (OTFT) operation regimes are discussed and an interesting perspective application of OTFT as multi-parameter gas sensor is proposed.

  14. A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation

    NASA Astrophysics Data System (ADS)

    Wang, Sihao; Pei, Yunpeng; Huang, Ru; Wang, Wenhua; Liu, Wen; Xue, Shoubin; An, Xia; Tian, Jingquan; Wang, Yangyuan

    2010-01-01

    A radiation-induced leakage current model in deep submicron bulk silicon N-channel metal-oxide-semiconductor field effect transistor (NMOSFET) is proposed in this paper for circuit simulations. The model takes into account the impact of the substrate doping concentration, the angle of shallow trench isolation (STI) region, and the junction depth of source/drain, which can predict the off-state leakage current of the NMOSFET with STI region irradiated at different radiation doses. The model is verified by comparing with the experimental results. The model can be easily implemented into the circuit simulator to evaluate the impact of total ionizing dose effect on the performance of circuit.

  15. Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor

    NASA Astrophysics Data System (ADS)

    Lew, K. L.; Yoon, S. F.

    2002-04-01

    The Ebers-Moll-like terminal current expressions of a composite collector double heterojunction bipolar transistor (DHBT), which takes the recombination effect into account, have been formulated and an expression for collector-emitter offset voltage [VCE(offset)] has been derived. Factors affecting the VCE(offset) of a composite collector DHBT are investigated and good agreement between the calculated and reported experimental results is shown. Analytical results showed that the transmission coefficient of the base-collector (B-C) junction does not have a considerable effect on the VCE(offset), provided that the B-C junction is of good quality. Thus, despite its asymmetric structure, the VCE(offset) of an optimally designed composite collector DHBT could be as low as that of a conventional DHBT. Hence a composite collector DHBT with low saturation voltage and negligible VCE(offset) is possible if the two conditions: (i) good quality B-C junction, (ii) base transport factor, α≈1, are fulfilled.

  16. Electron and heat transport in porphyrin-based single-molecule transistors with electro-burnt graphene electrodes

    PubMed Central

    Sangtarash, Sara

    2015-01-01

    Summary We have studied the charge and thermal transport properties of a porphyrin-based single-molecule transistor with electro-burnt graphene electrodes (EBG) using the nonequilibrium Green’s function method and density functional theory. The porphyrin-based molecule is bound to the EBG electrodes by planar aromatic anchor groups. Due to the efficient π–π overlap between the anchor groups and graphene and the location of frontier orbitals relative to the EBG Fermi energy, we predict HOMO-dominated transport. An on–off ratio as high as 150 is predicted for the device, which could be utilized with small gate voltages in the range of ±0.1 V. A positive thermopower of +280 μV/K is predicted for the device at the theoretical Fermi energy. The sign of the thermopower could be changed by tuning the Fermi energy. By gating the junction and changing the Fermi energy by +10 meV, this can be further enhanced to +475 μV/K. Although the electrodes and molecule are symmetric, the junction itself can be asymmetric due to different binding configurations at the electrodes. This can lead to rectification in the current–voltage characteristic of the junction. PMID:26199845

  17. Electron and heat transport in porphyrin-based single-molecule transistors with electro-burnt graphene electrodes.

    PubMed

    Sadeghi, Hatef; Sangtarash, Sara; Lambert, Colin J

    2015-01-01

    We have studied the charge and thermal transport properties of a porphyrin-based single-molecule transistor with electro-burnt graphene electrodes (EBG) using the nonequilibrium Green's function method and density functional theory. The porphyrin-based molecule is bound to the EBG electrodes by planar aromatic anchor groups. Due to the efficient π-π overlap between the anchor groups and graphene and the location of frontier orbitals relative to the EBG Fermi energy, we predict HOMO-dominated transport. An on-off ratio as high as 150 is predicted for the device, which could be utilized with small gate voltages in the range of ±0.1 V. A positive thermopower of +280 μV/K is predicted for the device at the theoretical Fermi energy. The sign of the thermopower could be changed by tuning the Fermi energy. By gating the junction and changing the Fermi energy by +10 meV, this can be further enhanced to +475 μV/K. Although the electrodes and molecule are symmetric, the junction itself can be asymmetric due to different binding configurations at the electrodes. This can lead to rectification in the current-voltage characteristic of the junction. PMID:26199845

  18. Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

    NASA Astrophysics Data System (ADS)

    Es-Sakhi, Azzedin D.

    concept of negative capacitance. The new field effect transistor (FET) based on ferroelectric insulator named Silicon-On-Ferroelectric Insulator Field Effect Transistor (SOF-FET). This proposal is a promising methodology for future ultra-low-power applications, because it demonstrates the ability to replace the silicon-bulk based MOSFET, and offers subthreshold swing significantly lower than 60mV/decade and reduced threshold voltage to form a conducting channel. The SOF-FET can also solve the issue of junction leakage (due to the presence of unipolar junction between the top plate of the negative capacitance and the diffused areas that form the transistor source and drain). In this device the charge hungry ferroelectric film already limits the leakage.

  19. The Sinai triple junction revisited

    NASA Astrophysics Data System (ADS)

    Courtillot, Vincent; Armijo, Rolando; Tapponnier, Paul

    1987-09-01

    This paper is a summary of a more detailed analysis of the kinematics of the Sinai triple junction (Courtillot et al., 1987). Accurate kinematic data are lacking along the Red Sea and they can be supplemented by bathymetric, topographic and geological data pertaining to the three arms of the entirely continental Sinai triple junction. Motions across the northern Red Sea and along the Gulf of Elat are an order of magnitude larger than across the Gulf of Suez. The direction of motion there remains a major uncertainty. A possible kinematic model is highlighted, in which right-lateral strike-slip motion and small pull-apart basins occur along the Gulf of Suez, in agreement with recent field observations in Egypt. Early Miocene is marked by major geodynamical changes all along the northern boundaries of the African and Indian plates. We suggest that rifting in the Arabian Sea, Gulf of Aden, Red Sea and Gulf of Suez was initiated at the end of the first phase of continental extrusion of Indochina, when the Tibetan plateau began to rise and spreading in the South China Sea came to a halt.

  20. Electron transport through molecular junctions

    NASA Astrophysics Data System (ADS)

    Zimbovskaya, Natalya A.; Pederson, Mark R.

    2011-12-01

    At present, metal-molecular tunnel junctions are recognized as important active elements in molecular electronics. This gives a strong motivation to explore physical mechanisms controlling electron transport through molecules. In the last two decades, an unceasing progress in both experimental and theoretical studies of molecular conductance has been demonstrated. In the present work we give an overview of theoretical methods used to analyze the transport properties of metal-molecular junctions as well as some relevant experiments and applications. After a brief general description of the electron transport through molecules we introduce a Hamiltonian which can be used to analyze electron-electron, electron-phonon and spin-orbit interactions. Then we turn to description of the commonly used transport theory formalisms including the nonequilibrium Green’s functions based approach and the approach based on the “master” equations. We discuss the most important effects which could be manifested through molecules in electron transport phenomena such as Coulomb, spin and Frank-Condon blockades, Kondo peak in the molecular conductance, negative differential resistance and some others. Bearing in mind that first principles electronic structure calculations are recognized as the indispensable basis of the theory of electron transport through molecules, we briefly discuss the main equations and some relevant applications of the density functional theory which presently is often used to analyze important characteristics of molecules and molecular clusters. Finally, we discuss some kinds of nanoelectronic devices built using molecules and similar systems such as carbon nanotubes, various nanowires and quantum dots.

  1. Magnetoresistance in Boron Carbide junctions

    NASA Astrophysics Data System (ADS)

    Day, Ellen; Sokolov, A.; Baruth, A.; Robertson, B. W.; Adenwalla, S.

    2007-03-01

    The properties of thin insulator layers are crucial to the performance of magnetic tunnel junctions. Commercial requirements are a device with a high tunnel magnetoresistance (TMR) with low cost and high stability. At present the vast majority of barriers are made from amorphous Al2O3 and crystalline MgO. The TMR value depends not only on the spin-dependent electronic structure of the electrodes, but on the metal-insulator interface. Oxide-type barriers may suffer from local vacancies and other type of defects, resulting in oxygen diffusion, making the TMR value unstable with time. We present TMR results obtained on a non-oxide barrier, boron carbide (B10C2) for applications in magnetic tunnel junctions. This low Z inorganic material can be grown by plasma enhanced chemical vapor deposition (PECVD) without pinholes in the ultra thin film regime. PECVD grown boron carbide is an excellent dielectric with resistivities in the range of 10^7 ohm-cm, with a band gap that can be adjusted from 0.7 eV to 1.9 eV by altering the boron to carbon ratio and to band gap values well above 2.7 eV by adding phosphorus. This creates a unique opportunity for experimental study of a broad spectrum of phenomena, related to the dielectric properties of the barrier.

  2. Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

    PubMed

    Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

    2016-08-24

    Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing. PMID:27471861

  3. I-V Characteristics of a Ferroelectric Field Effect Transistor

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat Duen

    1999-01-01

    There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

  4. A spiking neuron circuit based on a carbon nanotube transistor.

    PubMed

    Chen, C-L; Kim, K; Truong, Q; Shen, A; Li, Z; Chen, Y

    2012-07-11

    A spiking neuron circuit based on a carbon nanotube (CNT) transistor is presented in this paper. The spiking neuron circuit has a crossbar architecture in which the transistor gates are connected to its row electrodes and the transistor sources are connected to its column electrodes. An electrochemical cell is incorporated in the gate of the transistor by sandwiching a hydrogen-doped poly(ethylene glycol)methyl ether (PEG) electrolyte between the CNT channel and the top gate electrode. An input spike applied to the gate triggers a dynamic drift of the hydrogen ions in the PEG electrolyte, resulting in a post-synaptic current (PSC) through the CNT channel. Spikes input into the rows trigger PSCs through multiple CNT transistors, and PSCs cumulate in the columns and integrate into a 'soma' circuit to trigger output spikes based on an integrate-and-fire mechanism. The spiking neuron circuit can potentially emulate biological neuron networks and their intelligent functions. PMID:22710137

  5. Graphene as tunable contact for high performance thin film transistor

    NASA Astrophysics Data System (ADS)

    Liu, Yuan

    performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 105. The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. Furthermore, I will, demonstrate a new design strategy for vertical OTFT with ultra-short channel length without using conventional high-resolution lithography process. They can deliver a high current density over 1.8 A/ cm2 and thus enable a high cutoff frequency devices (~ 0.4 MHz) comparable with the ultra-short channel organic transistors. Importantly, with unique vertical architecture, the entire organic channel material is sandwiched between the source and drain electrodes and is thus naturally protected to ensure excellent air-stability. Finally I will present a new strategy by using graphene as the back electrodes to achieve Ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily tuned by a gate potential to enable a nearly perfect band alignment with MoS2. For the first time, a transparent contact to MoS2 is demonstrated with zero contact barrier and linear output behaviour at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator-transition (MIT) can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contacted MoS2 devices. With further passivation by boron nitride (BN) encapsulation, we demonstrate a record-high extrinsic (two-terminal) field effect mobility up to 1300 cm2/V s in MoS2 at low temperature. These findings can open up exciting new

  6. Graphene as tunable contact for high performance thin film transistor

    NASA Astrophysics Data System (ADS)

    Liu, Yuan

    performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 105. The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. Furthermore, I will, demonstrate a new design strategy for vertical OTFT with ultra-short channel length without using conventional high-resolution lithography process. They can deliver a high current density over 1.8 A/ cm2 and thus enable a high cutoff frequency devices (~ 0.4 MHz) comparable with the ultra-short channel organic transistors. Importantly, with unique vertical architecture, the entire organic channel material is sandwiched between the source and drain electrodes and is thus naturally protected to ensure excellent air-stability. Finally I will present a new strategy by using graphene as the back electrodes to achieve Ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily tuned by a gate potential to enable a nearly perfect band alignment with MoS2. For the first time, a transparent contact to MoS2 is demonstrated with zero contact barrier and linear output behaviour at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator-transition (MIT) can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contacted MoS2 devices. With further passivation by boron nitride (BN) encapsulation, we demonstrate a record-high extrinsic (two-terminal) field effect mobility up to 1300 cm2/V s in MoS2 at low temperature. These findings can open up exciting new

  7. Dose Rate Effects in Linear Bipolar Transistors

    NASA Technical Reports Server (NTRS)

    Johnston, Allan; Swimm, Randall; Harris, R. D.; Thorbourn, Dennis

    2011-01-01

    Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.

  8. Gate engineered performance of single molecular transistor

    NASA Astrophysics Data System (ADS)

    Ray, S. J.

    2016-05-01

    The operation, performance and electrostatics of multigated Single Molecular Transistor (SMT) devices are investigated using first-principles based density functional theory calculations for planar (pentacene) and non-planar (sucrose) molecules as islands. It has been found that the incorporation of larger numbers of gates allows enhanced electrostatic control in the SMT operation which has been quantified from the energy calculations and estimation of the gate capacitances. The effect of multiple gates is more dominant for a non-planar molecule than a planar molecule within an SMT which indicates the usefulness of such multi-gate architectures for future nanoelectronic devices.

  9. Transistor screening evaluation SJ6708H

    NASA Technical Reports Server (NTRS)

    Barton, J. L.

    1978-01-01

    A manufacturer was contracted to screen 125 transistors capable of withstanding the high level inductive voltages obtained when switching inductive loads. Planned differences included a change in die bonding to comply with NASA's desire for hard solder die attachment which further necessitated a change in package to conform to the required die mounting system. Evaluation of the electrical performance and recommended changes were made during the preliminary build phase of the program. The following sections are outlined: (1) narrative outline; (2) customer data summary and X-ray reports; (3) device specification; (4) failure analysis reports; (5) test facilities list; and (6) test measurement data.

  10. Carbon Based Transistors and Nanoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Rouhi, Nima

    Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

  11. Pass-transistor asynchronous sequential circuits

    NASA Astrophysics Data System (ADS)

    Whitaker, Sterling R.; Maki, Gary K.

    1989-02-01

    Design methods for asynchronous sequential pass-transistor circuits, which result in circuits that are hazard- and critical-race-free and which have added degrees of freedom for the input signals, are discussed. The design procedures are straightforward and easy to implement. Two single-transition-time state assignment methods are presented, and hardware bounds for each are established. A surprising result is that the hardware realizations for each next state variable and output variable is identical for a given flow table. Thus, a state machine with N states and M outputs can be constructed using a single layout replicated N + M times.

  12. Measurements of dose with individual FAMOS transistors

    SciTech Connect

    Scheick, L.Z.; McNulty, P.J.; Roth, D.R.; Davis, M.G.; Mason, B.E.

    1999-12-01

    A new method is described for measuring the doses absorbed by microstructures from an exposure to ionizing radiation. The decrease in the duration of UltraViolet light (UV) exposure required to erase each cell of a commercial UltraViolet erasable Programmable Read Only Memory (UVPROM) correlates with the dose absorbed by the floating gate of that transistor. This technique facilitates analysis of the microdose distribution across the array and the occurrence of Single Event Upset (SEU) like anomalous shifts due to rare large energy-deposition events.

  13. Hysteresis modeling in graphene field effect transistors

    SciTech Connect

    Winters, M.; Rorsman, N.; Sveinbjörnsson, E. Ö.

    2015-02-21

    Graphene field effect transistors with an Al{sub 2}O{sub 3} gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage v{sub g} versus the drain current i{sub d} reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi energy. The electron transport equations are then used to calculate the drain current for a given applied gate voltage. The hysteresis in measured data is then modeled via a modified Preisach kernel.

  14. Functional organic field-effect transistors.

    PubMed

    Guo, Yunlong; Yu, Gui; Liu, Yunqi

    2010-10-25

    Functional organic field-effect transistors (OFETs) have attracted increasing attention in the past few years due to their wide variety of potential applications. Research on functional OFETs underpins future advances in organic electronics. In this review, different types of functional OFETs including organic phototransistors, organic memory FETs, organic light emitting FETs, sensors based on OFETs and other functional OFETs are introduced. In order to provide a comprehensive overview of this field, the history, current status of research, main challenges and prospects for functional OFETs are all discussed. PMID:20853375

  15. Perpendicular transport in superlattice bipolar transistors (SBT)

    NASA Astrophysics Data System (ADS)

    Sibille, A.; Palmier, J. F.; Minot, C.; Harmand, J. C.; Dubon-Chevallier, C.

    Diffusion-limited electron transport in superlattices is studied by gain measurements on heterojunction bipolar transistors with a {GaAs}/{GaAlAs} superlattice base. In the case of thin barriers, Bloch conduction is observed, while hopping between localized levels prevails for large barriers. A transition occurs between these two regimes, localization being achieved when the energy broadening induced by the electron-phonon coupling added to the disorder due to imperfect growth is of the order of the miniband width. This interpretation is supported by temperature dependence measurements of the perpendicular mobilities in relation with theoretical calculations of these mobilities.

  16. Relationship Between Latchup And Transistor Current Gain

    NASA Technical Reports Server (NTRS)

    Edmonds, Larry D.

    1989-01-01

    Theoretical study takes new look at current-vs.-voltage behavior of silicon controlled rectifiers (SCR's), four-layer complementary metal oxide/semiconductor (CMOS) devices, and similar devices susceptible to latchup. For purposes of analysis, "latchup" denotes transition of such device from lower-current-conducting steady state to distinct higher-current-conducting steady state. Focuses upon conventional two-couple-transistor model of one-dimensional SCR. Although model gives oversimplified view of latchup in CMOS circuits, useful for qualitative predictions of electrical characteristics.

  17. Spin field effect transistors with ultracold atoms.

    PubMed

    Vaishnav, J Y; Ruseckas, Julius; Clark, Charles W; Juzeliūnas, Gediminas; Juzelŭnas, Gediminas

    2008-12-31

    We propose a method of constructing cold atom analogs of the spintronic device known as the Datta-Das transistor (DDT), which, despite its seminal conceptual role in spintronics, has never been successfully realized with electrons. We propose two alternative schemes for an atomic DDT, both of which are based on the experimental setup for tripod stimulated Raman adiabatic passage. Both setups involve atomic beams incident on a series of laser fields mimicking the relativistic spin-orbit coupling for electrons that is the operating mechanism of the DDT. PMID:19437649

  18. Solar Cells With Multiple Small Junctions

    NASA Technical Reports Server (NTRS)

    Daud, T.; Koliwad, K. M.

    1985-01-01

    Concept for improving efficiency of photovoltaic solar cells based on decreasing p/n junction area in relation to total surface area of cell. Because of reduced junction area, surface leakage drops and saturation current density decreases. Surface passivation helps to ensure short-circuit current remains at high value and response of cells to blue light increases.

  19. The tight junction: a multifunctional complex.

    PubMed

    Schneeberger, Eveline E; Lynch, Robert D

    2004-06-01

    Multicellular organisms are separated from the external environment by a layer of epithelial cells whose integrity is maintained by intercellular junctional complexes composed of tight junctions, adherens junctions, and desmosomes, whereas gap junctions provide for intercellular communication. The aim of this review is to present an updated overview of recent developments in the area of tight junction biology. In a relatively short time, our knowledge of the tight junction has evolved from a relatively simple view of it being a permeability barrier in the paracellular space and a fence in the plane of the plasma membrane to one of it acting as a multicomponent, multifunctional complex that is involved in regulating numerous and diverse cell functions. A group of integral membrane proteins-occludin, claudins, and junction adhesion molecules-interact with an increasingly complex array of tight junction plaque proteins not only to regulate paracellular solute and water flux but also to integrate such diverse processes as gene transcription, tumor suppression, cell proliferation, and cell polarity. PMID:15151915

  20. Zipper and freeway shear zone junctions

    NASA Astrophysics Data System (ADS)

    Passchier, Cees; Platt, John

    2016-04-01

    Ductile shear zones are usually presented as isolated planar high-strain domains in a less deformed wall rock, characterised by shear sense indicators such as characteristic deflected foliation traces. Many shear zones, however, form branched systems and if movement on such branches is contemporaneous, the resulting geometry can be complicated and lead to unusual fabric geometries in the wall rock. For Y-shaped shear zone junctions with three simultaneously operating branches, and with slip directions at a high angle to the branch line, eight basic types of shear zone triple junctions are possible, divided into three groups. The simplest type, called freeway junctions, have similar shear sense on all three branches. If shear sense is different on the three branches, this can lead to space problems. Some of these junctions have shear zone branches that join to form a single branch, named zipper junctions, or a single shear zone which splits to form two, known as wedge junctions. Closing zipper junctions are most unusual, since they form a non-active high-strain zone with opposite deflection of foliations. Shear zipper and shear wedge junctions have two shear zones with similar shear sense, and one with the opposite sense. All categories of shear zone junctions show characteristic flow patterns in the shear zone and its wall rock. Shear zone junctions with slip directions normal to the branch line can easily be studied, since ideal sections of shear sense indicators lie in the plane normal to the shear zone branches and the branch line. Expanding the model to allow slip oblique and parallel to the branch line in a full 3D setting gives rise to a large number of geometries in three main groups. Slip directions can be parallel on all branches but oblique to the branch line: two slip directions can be parallel and a third oblique, or all three branches can have slip in different directions. Such more complex shear zone junctions cannot be studied to advantage in a

  1. Design of immobile nucleic acid junctions.

    PubMed Central

    Seeman, N C; Kallenbach, N R

    1983-01-01

    Nucleic acids that interact to generate structures in which three or more double helices emanate from a single point are said to form a junction. Such structures arise naturally as intermediates in DNA replication and recombination. It has been proposed that stable junctions can be created by synthesizing sets of oligonucleotides of defined sequence that can associate by maximizing Watson-Crick complementarity (Seeman N. C., 1981, Biomolecular Stereodynamics. Adenine Press, New York. 1: 269-278; Seeman, N. C., 1982, J. Theor. Biol. 99:237-247.) To make it possible to design molecules that will form junctions of specific architecture, we present here an efficient algorithm for generating nucleic acid sequences that optimize two fundamental properties: fidelity and stability. Fidelity refers to the relative probability of forming the junction complex relative to all alternative paired structures. Calculations are described that permit approximate prediction of the melting curves for junction complexes. PMID:6197102

  2. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    SciTech Connect

    Cleland, A.N.

    1991-04-01

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q {approx} 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement.

  3. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

    PubMed Central

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S.; Saeys, Mark; Yang, Hyunsoo

    2014-01-01

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices. PMID:25266219

  4. Analysis of low-voltage super-junction LDMOS structures on thin-SOI substrates

    NASA Astrophysics Data System (ADS)

    Cortés, I.; Fernández-Martínez, P.; Flores, D.; Hidalgo, S.; Rebollo, J.

    2008-01-01

    This paper is addresses the analysis of the super-junction (SJ) concept applied to LDMOS transistors in thin-SOI technology. Extensive numerical simulations have been carried out to investigate their suitability for low-voltage power applications. The static and dynamic performances of different SJLDMOS structures have been studied in comparison with a conventional RESURF LDMOS structure with the same SOI substrate. In order to improve the current-crowding effect at the body/drift region, the inclusion of a trench lateral gate in the SJ structure (TSJLDMOS) is proposed to further decrease the total on-state resistance (Ron) value maintaining the same voltage capability. The increment of the N+ source and N-drift diffusion area overlapping the gate terminal leads to a gate-related capacitance enhancement. Although very low Ron results can be obtained, the capacitance degradation limits the suitability of TSJLDMOS structure in RF power amplifiers.

  5. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S.; Saeys, Mark; Yang, Hyunsoo

    2014-09-01

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.

  6. An improved trench gate super-junction IGBT with double emitter

    NASA Astrophysics Data System (ADS)

    Weinan, Dai; Jing, Zhu; Weifeng, Sun; Yicheng, Du; Keqin, Huang

    2015-01-01

    An improved trench gate super-junction insulated-gate bipolar transistor is presented. The improved structure contains two emitter regions. The first emitter region of the device works as the conventional structure, which can absorb both the electron current and hole current. The second emitter on the top of the p-pillar acts as the hole current diverter, leading to an improved latch-up capability without sacrificing the off-state breakdown voltage (BV) and turn-off loss. The simulation shows that the latch-up limit of the SJ-IGBT increases from 15000 to 28300 A/cm2 at VGE = 10 V, the BV is 810 V, and the turn off loss is 6.5 mJ/cm2 at Von = 1.2 V.

  7. Coherent Matterwave Emission from an Atomtronic Transistor

    NASA Astrophysics Data System (ADS)

    Straatsma, Cameron; Anderson, Dana

    2016-05-01

    We investigate matterwave emission from a triple-well ``transistor'' atomic potential consisting of a ``source'' well treated as a reservoir having fixed chemical potential and temperature, a narrow ``gate'' well, and a ``drain'' well coupled to the vacuum. The ground state of the gate well is occupied by a Bose-Einstein condensate having large chemical potential along with the first excited state of the potential. These lower states are coupled to the two highest lying bound states lying near the top of the barriers separating the gate from the other two wells. We show that the energy level separations of the two lower states and the two upper states can be made degenerate by design of the Gaussian barrier widths and separation. When degenerate, the two pairs of states are strongly coupled by phonon exchange. We seek a self-consistent solution for the coupling between the high-lying states and the ground state pair, which occurs due to stimulated absorption and emission of phonons. In steady-state, coupling of the upper states leads to matter wave emission such that the emission of the two states is mutually coherent. The output from the transistor is thus an intensity-modulated matterwave whose frequency is approximately equal to the ground-state trap frequency.

  8. Intrinsic delay of permeable base transistor

    SciTech Connect

    Chen, Wenchao; Guo, Jing; So, Franky

    2014-07-28

    Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barrier height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.

  9. The cavity-embedded-cooper pair transistor

    NASA Astrophysics Data System (ADS)

    Chen, Fei

    Nearly eight decades after Erwin Schrodinger proposed his famous cat paradox, the boundary between classical and quantum physics is becoming accessible to experimental study in condensed matter systems, in which macroscopic and microscopic degrees of freedom interact with each other. The cavity-embedded-Cooper pair transistor (cCPT) is an ideal candidate for such a study in that it is not only strongly and intrinsically nonlinear but also fully quantum mechanical. A novel technique, based on the circuit quantum electrodynamics architecture, is first introduced for applying a dc bias to a high-Q superconducting microwave cavity. The development and investigation of the cCPT system, in which a Cooper pair transistor acting as a single artificial atom is directly coupled to an on-chip dc-biased high-Q resonator, is then presented. Self-oscillations in the cCPT, internally driven by the ac Josephson effect, demonstrate the strong and phase coherent coupling between matter and light in the cCPT. Meanwhile, photons continually produced by the system are collected and characterized by quantum state tomography, which indicates the non-classical nature of the emitted light and the nonlinear quantum dynamics of the cCPT system.

  10. Ion selective transistor modelling for behavioural simulations.

    PubMed

    Daniel, M; Janicki, M; Wroblewski, W; Dybko, A; Brzozka, Z; Napieralski, A

    2004-01-01

    Computer aided design and simulation of complex silicon microsystems oriented for environment monitoring requires efficient and accurate models of ion selective sensors, compatible with the existing behavioural simulators. This paper concerns sensors based on the back-side contact Ion Sensitive Field Effect Transistors (ISFETs). The ISFETs with silicon nitride gate are sensitive to hydrogen ion concentration. When the transistor gate is additionally covered with a special ion selective membrane, selectivity to other than hydrogen ions can be achieved. Such sensors are especially suitable for flow analysis of solutions containing various ions. The problem of ion selective sensor modelling is illustrated here on a practical example of an ammonium sensitive membrane. The membrane is investigated in the presence of some interfering ions and appropriate selectivity coefficients are determined. Then, the model of the whole sensor is created and used in subsequent electrical simulations. Providing that appropriate selectivity coefficients are known, the proposed model is applicable for any membrane, and can be straightforwardly implemented for behavioural simulation of water monitoring microsystems. The model has been already applied in a real on-line water pollution monitoring system for detection of various contaminants. PMID:15685987

  11. Tantalum Disulfide Ionic Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Yu, Yijun; Yang, Fangyuan; Lu, Xiu Fang; Yan, Ya Jun; Cho, Y. H.; Ma, Liguo; Niu, Xiaohai; Kim, Sejoong; Son, Yong-Woo; Feng, Donglai; Li, Shiyan; Cheong, Sang-Wook; Chen, Xian Hui; Zhang, Yuanbo

    2015-03-01

    The ability to tune material properties using gate electric field is at the heart of the modern electronic technology. Electrolyte gating has recently emerged as an important technique to reach extremely high surface charge carrier concentration in a variety of materials through the formation of electric double layer (EDL) at the sample surface. Here we demonstrate a new mechanism of electrolyte gating that modulates the volumetric carrier density by gate-controlled intercalation in layered materials. We fabricate field-effect transistors (referred to as ionic field-effect transistor, iFET) based on transition metal dichalcogenides 1T-TaS2 and 2H-TaS2. The unprecedented large doping induces dramatic changes in the transport properties of the sample, including CDW phase transitions, superconductivity and metal-to-insulator transitions. The controllable and reversible intercalation of different ion spices into layered materials opens up new possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

  12. Four-gate transistor analog multiplier circuit

    NASA Technical Reports Server (NTRS)

    Mojarradi, Mohammad M. (Inventor); Blalock, Benjamin (Inventor); Cristoloveanu, Sorin (Inventor); Chen, Suheng (Inventor); Akarvardar, Kerem (Inventor)

    2011-01-01

    A differential output analog multiplier circuit utilizing four G.sup.4-FETs, each source connected to a current source. The four G.sup.4-FETs may be grouped into two pairs of two G.sup.4-FETs each, where one pair has its drains connected to a load, and the other par has its drains connected to another load. The differential output voltage is taken at the two loads. In one embodiment, for each G.sup.4-FET, the first and second junction gates are each connected together, where a first input voltage is applied to the front gates of each pair, and a second input voltage is applied to the first junction gates of each pair. Other embodiments are described and claimed.

  13. Electric field breakdown in single molecule junctions.

    PubMed

    Li, Haixing; Su, Timothy A; Zhang, Vivian; Steigerwald, Michael L; Nuckolls, Colin; Venkataraman, Latha

    2015-04-22

    Here we study the stability and rupture of molecular junctions under high voltage bias at the single molecule/single bond level using the scanning tunneling microscope-based break-junction technique. We synthesize carbon-, silicon-, and germanium-based molecular wires terminated by aurophilic linker groups and study how the molecular backbone and linker group affect the probability of voltage-induced junction rupture. First, we find that junctions formed with covalent S-Au bonds are robust under high voltage and their rupture does not demonstrate bias dependence within our bias range. In contrast, junctions formed through donor-acceptor bonds rupture more frequently, and their rupture probability demonstrates a strong bias dependence. Moreover, we find that the junction rupture probability increases significantly above ∼1 V in junctions formed from methylthiol-terminated disilanes and digermanes, indicating a voltage-induced rupture of individual Si-Si and Ge-Ge bonds. Finally, we compare the rupture probabilities of the thiol-terminated silane derivatives containing Si-Si, Si-C, and Si-O bonds and find that Si-C backbones have higher probabilities of sustaining the highest voltage. These results establish a new method for studying electric field breakdown phenomena at the single molecule level. PMID:25675085

  14. Electrostatic control of thermoelectricity in molecular junctions.

    PubMed

    Kim, Youngsang; Jeong, Wonho; Kim, Kyeongtae; Lee, Woochul; Reddy, Pramod

    2014-11-01

    Molecular junctions hold significant promise for efficient and high-power-output thermoelectric energy conversion. Recent experiments have probed the thermoelectric properties of molecular junctions. However, electrostatic control of thermoelectric properties via a gate electrode has not been possible due to technical challenges in creating temperature differentials in three-terminal devices. Here, we show that extremely large temperature gradients (exceeding 1 × 10(9) K m(-1)) can be established in nanoscale gaps bridged by molecules, while simultaneously controlling their electronic structure via a gate electrode. Using this platform, we study prototypical Au-biphenyl-4,4'-dithiol-Au and Au-fullerene-Au junctions to demonstrate that the Seebeck coefficient and the electrical conductance of molecular junctions can be simultaneously increased by electrostatic control. Moreover, from our studies of fullerene junctions, we show that thermoelectric properties can be significantly enhanced when the dominant transport orbital is located close to the chemical potential (Fermi level) of the electrodes. These results illustrate the intimate relationship between the thermoelectric properties and charge transmission characteristics of molecular junctions and should enable systematic exploration of the recent computational predictions that promise extremely efficient thermoelectric energy conversion in molecular junctions. PMID:25282046

  15. The state of art model for thermal transistor

    NASA Astrophysics Data System (ADS)

    Vachhani, M. G.; Gajjar, P. N.

    2016-05-01

    A state of art model for thermal transistor is proposed using three FK 1D chains. In this paper we study how control over heat transfer in nanoscale materials be achieved using microscopic model of thermal transistor. We study the influence of spring constant of source segment on the switching efficiency, thermal amplification and working region of the thermal transistor. We found the increase in switching efficiency and thermal amplification where as decrease in working region with increase in spring constant of source segment.

  16. Simple Interface Engineering of Graphene Transistors with Hydrophobizing Stamps.

    PubMed

    Chae, Soo Sang; Choi, Won Jin; Yang, Cheol-Soo; Lee, Tae Il; Lee, Jeong-O

    2016-06-15

    We demonstrate a simple surface engineering method for fabricating graphene transistors by using hydrophobizing stamps. By simply contact-printing hydrophobizing stamp that is made with polydimethylsiloxane (PDMS) on a standard silicon substrate for a certain contact-time, it was possible to control the contact angle of the substrate and electrical characteristics of the graphene transistors supported on the substrate. Moreover, graphene transistors supported on the engineered silicon substrate showed improved performances, including an increase in carrier mobility and loss of hysteresis. As a proof-of-concept experiment, a simple logic gate operation was demonstrated by connecting a pristine graphene device with an interface-engineered device. PMID:27238560

  17. Organic transistors in optical displays and microelectronic applications.

    PubMed

    Gelinck, Gerwin; Heremans, Paul; Nomoto, Kazumasa; Anthopoulos, Thomas D

    2010-09-01

    Organic thin-film transistors (OTFTs) offer unprecedented opportunities for implementation in a broad range of technological applications spanning from large-volume microelectronics and optical displays to chemical and biological sensors. In this Progress Report, we review the application of organic transistors in the fields of flexible optical displays and microelectronics. The advantages associated with the use of OTFT technology are discussed with primary emphasis on the latest developments in the area of active-matrix electrophoretic and organic light-emitting diode displays based on OTFT backplanes and on the application of organic transistors in microelectronics including digital and analog circuits. PMID:20533415

  18. Method for fabricating transistors using crystalline silicon devices on glass

    DOEpatents

    McCarthy, Anthony M.

    1997-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  19. Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor.

    PubMed

    Izak, Tibor; Krátká, Marie; Kromka, Alexander; Rezek, Bohuslav

    2015-05-01

    We show the influence of osteoblastic SAOS-2 cells on the transfer characteristics of nanocrystalline diamond solution-gated field-effect transistors (SGFET) prepared on glass substrates. Channels of these fully transparent SGFETs are realized by hydrogen termination of undoped diamond film. After cell cultivation, the transistors exhibit about 100× increased leakage currents (up to 10nA). During and after the cell delamination, the transistors return to original gate currents. We propose a mechanism where this triggering effect is attributed to ions released from adhered cells, which depends on the cell adhesion morphology, and could be used for cell culture monitoring. PMID:25835144

  20. Multi-gate synergic modulation in laterally coupled synaptic transistors

    NASA Astrophysics Data System (ADS)

    Zhu, Li Qiang; Xiao, Hui; Liu, Yang Hui; Wan, Chang Jin; Shi, Yi; Wan, Qing

    2015-10-01

    Laterally coupled oxide-based synaptic transistors with multiple gates are fabricated on phosphorosilicate glass electrolyte films. Electrical performance of the transistor can be evidently improved when the device is operated in a tri-gate synergic modulation mode. Excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked, and PPF index can be effectively tuned by the voltage applied on the modulatory terminal. At last, superlinear to sublinear synaptic integration regulation is also mimicked by applying a modulatory pulse on the third modulatory terminal. The multi-gate oxide-based synaptic transistors may find potential applications in biochemical sensors and neuromorphic systems.

  1. Constraints on string networks with junctions

    NASA Astrophysics Data System (ADS)

    Copeland, E. J.; Kibble, T. W. B.; Steer, D. A.

    2007-03-01

    We consider the constraints on string networks with junctions in which the strings may all be different, as may be found, for example, in a network of (p,q) cosmic superstrings. We concentrate on three aspects of junction dynamics. First we consider the propagation of small-amplitude waves across a static three-string junction. Then, generalizing our earlier work, we determine the kinematic constraints on two colliding strings with different tensions. As before, the important conclusion is that strings do not always reconnect with a third string; they can pass straight through one another (or in the case of non-Abelian strings become stuck in an X configuration), the constraint depending on the angle at which the strings meet, on their relative velocity, and on the ratios of the string tensions. For example, if the two colliding strings have equal tensions, then for ultrarelativistic initial velocities they pass through one another. However, if their tensions are sufficiently different they can reconnect. Finally, we consider the global properties of junctions and strings in a network. Assuming that, in a network, the incoming waves at a junction are independently randomly distributed, we determine the root-mean-square (r.m.s.) velocities of strings and calculate the average speed at which a junction moves along each of the three strings from which it is formed. Our findings suggest that junction dynamics may be such as to preferentially remove the heavy strings from the network leaving a network of predominantly light strings. Furthermore the r.m.s. velocity of strings in a network with junctions is smaller than 1/2, the result for conventional Nambu-Goto strings without junctions in Minkowski space-time.

  2. Constraints on string networks with junctions

    SciTech Connect

    Copeland, E. J.; Kibble, T. W. B.; Steer, D. A.

    2007-03-15

    We consider the constraints on string networks with junctions in which the strings may all be different, as may be found, for example, in a network of (p,q) cosmic superstrings. We concentrate on three aspects of junction dynamics. First we consider the propagation of small-amplitude waves across a static three-string junction. Then, generalizing our earlier work, we determine the kinematic constraints on two colliding strings with different tensions. As before, the important conclusion is that strings do not always reconnect with a third string; they can pass straight through one another (or in the case of non-Abelian strings become stuck in an X configuration), the constraint depending on the angle at which the strings meet, on their relative velocity, and on the ratios of the string tensions. For example, if the two colliding strings have equal tensions, then for ultrarelativistic initial velocities they pass through one another. However, if their tensions are sufficiently different they can reconnect. Finally, we consider the global properties of junctions and strings in a network. Assuming that, in a network, the incoming waves at a junction are independently randomly distributed, we determine the root-mean-square (r.m.s.) velocities of strings and calculate the average speed at which a junction moves along each of the three strings from which it is formed. Our findings suggest that junction dynamics may be such as to preferentially remove the heavy strings from the network leaving a network of predominantly light strings. Furthermore the r.m.s. velocity of strings in a network with junctions is smaller than 1/{radical}(2), the result for conventional Nambu-Goto strings without junctions in Minkowski space-time.

  3. Radiation effects in III-V semiconductors and heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Shatalov, Alexei

    The electron, gamma and neutron radiation degradation of III-V semiconductors and heterojunction bipolar transistors (HBTs) is investigated in this thesis. Particular attention is paid to InP and InGaAs materials and InP/InGaAs abrupt single HBTs (SHBTs). Complete process sequences for fabrication of InP/ InGaAs HBTs are developed and subsequently employed to produce the devices, which are then electrically characterized and irradiated with the different types of radiation. A comprehensive analytical HBT model is developed and radiation damage calculations are performed to model the observed radiation-induced degradation of SHBTs. The most pronounced radiation effects found in SHBTs include reduction of the common-emitter DC current gain, shift of the collector-emitter (CE) offset voltage and increase of the emitter, base and collector parasitic resistances. Quantitative analysis performed using the developed model demonstrates that increase of the neutral bulk and base-emitter (BE) space charge region (SCR) components of the base current are responsible for the observed current gain degradation. The rise of the neutral bulk recombination is attributed to decrease in a Shockley-Read-Hall (SRH) carrier lifetime, while the SCR current increase is caused by rising SCR SRH recombination and activation of a tunneling-recombination mechanism. On the material level these effects are explained by displacement defects produced in a semiconductor by the incident radiation. The second primary change of the SHBT characteristics, CE offset voltage shift, is induced by degradation of the base- collector (BC) junction. The observed rise of the BC current is brought on by diffusion and recombination currents which increase as more defects are introduced in a semiconductor. Finally, the resistance degradation is attributed to deterioration of low-doped layers of a transistor, and to degradation of the device metal contacts.

  4. Spin Hall effect for detection of spin-currents -- Realization of a Spin transistor

    NASA Astrophysics Data System (ADS)

    Wunderlich, Joerg

    2012-02-01

    The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor microchannel. The inverse spin Hall effect (iSHE) detection of spins manipulated by a gate electrode [1] has recently led to the experimental demonstration of a spin transistor device. [2] Here, the spin injection into a 2-dimensional electron gas (2DEG) was done optically in the depletion layer of a reverse biased pn-junction. [3] The iSHE detection is also used for electrical spin injection from a Fe electrode into a lateral GaAs channel combined with a simultaneous non-local spin valve measurement [4-10]. The spins in the channel are manipulated via the Hanle spin precession induced by an applied magnetic field and via a drift of electrons induced by an applied electric field. The output spin signal is suppressed or enhanced depending on the applied electrical bias rendering the device to a spin transitor different from the Datta Das concept. [11] [4pt] [1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990). [0pt] [2] J. Wunderlich, et al., Science 330,1801 (2010). [0pt] [3] J. Wunderlich, et al., Nature Phys., 5, 675 (2009). [0pt] [4] X. Lou, Nature Phys. 3, 197 (2007). [0pt] [5] M. Ciorga, et al., Phys. Rev. B 79, 165321 (2009). [0pt] [6] C. Awo-Affouda, et al., Appl. Phys. Lett. 94, 102511 (2009). [0pt] [7] M. K. Chan, et al., Phys. Rev. B 80, 161206(R) (2009). [0pt] [8] G. Salis, et al., Phys. Rev. B 80, 115332 (2009). [0pt] [9] G. Salis, et al., Phys. Rev. B 81, 205323 (2010). [0pt] [10] E. S. Garlid, et al., Phys. Rev. Lett. 105, 156602 (2010). [0pt] [11] K. Olejnik, et al., submitted.

  5. Artificial neural systems using memristive synapses and nano-crystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Cantley, Kurtis D.

    Future computer systems will not rely solely on digital processing of inputs from well-defined data sets. They will also be required to perform various computational tasks using large sets of ill-defined information from the complex environment around them. The most efficient processor of this type of information known today is the human brain. Using a large number of primitive elements (˜1010 neurons in the neocortex) with high parallel connectivity (each neuron has ˜104 synapses), brains have the remarkable ability to recognize and classify patterns, predict outcomes, and learn from and adapt to incredibly diverse sets of problems. A reasonable goal in the push to increase processing power of electronic systems would thus be to implement artificial neural networks in hardware that are compatible with today's digital processors. This work focuses on the feasibility of utilizing non-crystalline silicon devices in neuromorphic electronics. Hydrogenated amorphous silicon (a-Si:H) nanowire transistors with Schottky barrier source/drain junctions, as well as a-Si:H/Ag resistive switches are fabricated and characterized. In the transistors, it is found that the on-current scales linearly with the effective width W eff of the channel nanowire array down to at least 20 nm. The solid-state electrolyte resistive switches (memristors) are shown to exhibit the proper current-voltage hysteresis. SPICE models of similar devices are subsequently developed to investigate their performance in neural circuits. The resulting SPICE simulations demonstrate spiking properties and synaptic learning rules that are incredibly similar to those in biology. Specifically, the neuron circuits can be designed to mimic the firing characteristics of real neurons, and Hebbian learning rules are investigated. Finally, some applications are presented, including associative learning analogous to the classical conditioning experiments originally performed by Pavlov, and frequency and pattern

  6. The myoendothelial junction: breaking through the matrix?

    PubMed Central

    Heberlein, Katherine; Straub, Adam; Isakson, Brant E

    2009-01-01

    Within the vasculature, specialized cellular extensions from endothelium (and sometimes smooth muscle) protrude through the extracellular matrix where they interact with the opposing cell type. These structures, termed myoendothelial junctions, have been cited as a possible key element in the control of several vascular physiologies and pathologies. This review will discuss observations that have led to a focus on the myoendothelial junction as a cellular integration point in the vasculature for both homeostatic and pathological conditions and as a possible independent signaling entity. We will also highlight the need for novel approaches to studying the myoendothelial junction in order to comprehend the cellular biology associated with this structure. PMID:19330678

  7. Temperature dependence of thermopower in molecular junctions

    NASA Astrophysics Data System (ADS)

    Kim, Youngsang; Lenert, Andrej; Meyhofer, Edgar; Reddy, Pramod

    2016-07-01

    The thermoelectric properties of molecular junctions are of considerable interest due to their promise for efficient energy conversion. While the dependence of thermoelectric properties of junctions on molecular structure has been recently studied, their temperature dependence remains unexplored. Using a custom built variable temperature scanning tunneling microscope, we measured the thermopower and electrical conductance of individual benzenedithiol junctions over a range of temperatures (100 K-300 K). We find that while the electrical conductance is independent of temperature, the thermopower increases linearly with temperature, confirming the predictions of the Landauer theory.

  8. Palladium electrodes for molecular tunnel junctions.

    PubMed

    Chang, Shuai; Sen, Suman; Zhang, Peiming; Gyarfas, Brett; Ashcroft, Brian; Lefkowitz, Steven; Peng, Hongbo; Lindsay, Stuart

    2012-10-26

    Gold has been the metal of choice for research on molecular tunneling junctions, but it is incompatible with complementary metal-oxide-semiconductor fabrication because it forms deep level traps in silicon. Palladium electrodes do not contaminate silicon, and also give higher tunnel current signals in the molecular tunnel junctions that we have studied. The result is cleaner signals in a recognition-tunneling junction that recognizes the four natural DNA bases as well as 5-methyl cytosine, with no spurious background signals. More than 75% of all the recorded signal peaks indicate the base correctly. PMID:23037952

  9. New Phenomena in Josephson SINIS Junctions

    NASA Astrophysics Data System (ADS)

    Volkov, A. F.

    1995-06-01

    We analyze the dc and ac Josephson effects in SaINISb junctions in which an additional bias current flows in the N layer. The case of low temperatures and voltages \\(eV, T<<Δ\\) is considered in the dirty limit. We show that the critical Josephson current may change sign, and the considered SINIS junction may become a π junction if the voltage drop across the N/Sa interface exceeds a certain value \\(eVN>Δ/2\\). The ac Josephson effect may arise even if the current flows only through the N/Sa interface, whereas the current through the Sb/N interface is absent.

  10. Plasticity of single-atom Pb junctions

    NASA Astrophysics Data System (ADS)

    Müller, M.; Salgado, C.; Néel, N.; Palacios, J. J.; Kröger, J.

    2016-06-01

    A low-temperature scanning tunneling microscope was used to fabricate atomic contacts on Pb(111). Conductance characteristics of the junctions were simultaneously recorded with forming and subsequent breaking of the contacts. A pronounced hysteresis effect in conductance traces was observed from junctions comprising the clean Pb(111) surface. The hysteretic behavior was less profound in contacts to single Pb atoms adsorbed to Pb(111). Density-functional calculations reproduced the experimental results by performing a full ab initio modeling of plastic junction deformations. A comprehensive description of the experimental findings was achieved by considering different atomic tip apex geometries.

  11. Pressure Sensitive Insulated Gate Field Effect Transistor

    NASA Astrophysics Data System (ADS)

    Suminto, James Tjan-Meng

    A pressure sensitive insulated gate field effect transistor has been developed. The device is an elevated gate field-effect-transistor. It consists of a p-type silicon substrate in which two n^+ region, the source and drain, are formed. The gate electrode is a metal film sandwiched in an insulated micro-diaphragm resembling a pill-box which covers the gate oxide, drain, and source. The space between the gate electrode and the oxide is vacuum or an air-gap. When pressure is applied on the diaphragm it deflects and causes a change in the gate capacitance, and thus modulates the conductance of the channel between source and drain. A general theory dealing with the characteristic of this pressure sensitive insulated gate field effect transistor has been derived, and the device fabricated. The fabrication process utilizes the standard integrated circuit fabrication method. It features a batch fabrication of field effect devices followed by the batch fabrication of the deposited diaphragm on top of each field effect device. The keys steps of the diaphragm fabrication are the formation of spacer layer, formation of the diaphragm layer, and the subsequent removal of the spacer layer. The chip size of the device is 600 μm x 1050 mum. The diaphragm size is 200 μm x 200 mum. Characterization of the device has been performed. The current-voltage characteristics with pressure as parameters have been demonstrated and the current-pressure transfer curves obtained. They show non-linear characteristics as those of conventional capacitive pressure sensors. The linearity of threshold voltage versus pressure transfer curves has been demonstrated. The temperature effect on the device performances has been tested. The temperature coefficient of threshold voltage, rather than the electron mobility, has dominated the temperature coefficient of the device. Two temperature compensation schemes have been tested: one method is by connecting two identical PSIGFET in a differential amplifier

  12. Enhanced performance of GeSn source-pocket tunnel field-effect transistors for low-power applications

    NASA Astrophysics Data System (ADS)

    Liu, Lei; Liang, Renrong; Wang, Jing; Xu, Jun

    2016-07-01

    Germanium–tin (GeSn) source-pocket tunnel field-effect transistors (TFETs) are comprehensively investigated by numerical device simulations at low supply voltages. Device configurations with homo- and hetero-tunneling junctions (TJ) are analyzed and compared. It is shown that direct-gap GeSn alloys are favorable for increasing the source-pocket tunneling rate. Increasing the source Sn composition of the device may aid the on-state current increase, but the subthreshold swing (SS) is degraded because of the reduced band gap. At ultrascaled supply voltages, the GeSn hetero-TJ TFET with higher pocket Sn composition exhibits the best performance and SS, and the device performance can be further improved by increasing the Sn composition in the pocket region. These simulation results could be used to understand and optimize the performance of GeSn source-pocket TFETs, which are very promising electronic devices for low-power applications.

  13. Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Spathis, C. Birbas, A.; Georgakopoulou, K.

    2015-08-15

    Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.

  14. Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors

    SciTech Connect

    Chiang, Han-Wei; Rode, Johann C.; Choudhary, Prateek; Rodwell, Mark J. W.

    2014-01-21

    The DC current gain in In{sub 0.53}Ga{sub 0.47}As/InP double-heterojunction bipolar transistors is computed based on a drift-diffusion model, and is compared with experimental data. Even in the absence of other scaling effects, lateral diffusion of electrons to the base Ohmic contacts causes a rapid reduction in DC current gain as the emitter junction width and emitter-base contact spacing are reduced. The simulation and experimental data are compared in order to examine the effect of carrier lateral diffusion on current gain. The impact on current gain due to device scaling and approaches to increase current gain are discussed.

  15. GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

    NASA Astrophysics Data System (ADS)

    Zhao, Lian-Feng; Tan, Zhen; Wang, Jing; Xu, Jun

    2015-01-01

    GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the underlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given. Project supported by the National Basic Research Program of China (Grant No. 2011CBA00602) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-002).

  16. Tunnel junction multiple wavelength light-emitting diodes

    DOEpatents

    Olson, J.M.; Kurtz, S.R.

    1992-11-24

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

  17. Tunnel junction multiple wavelength light-emitting diodes

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.

    1992-01-01

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

  18. Ferromagnetic planar Josephson junction with transparent interfaces: a φ junction proposal.

    PubMed

    Heim, D M; Pugach, N G; Kupriyanov, M Yu; Goldobin, E; Koelle, D; Kleiner, R

    2013-05-29

    We calculate the current-phase relation of a planar Josephson junction with a ferromagnetic weak link located on top of a thin normal metal film. Following experimental observations we assume transparent superconductor-ferromagnet interfaces. This provides the best interlayer coupling and a low suppression of the superconducting correlations penetrating from the superconducting electrodes into the ferromagnetic layer. We show that this Josephson junction is a promising candidate for experimental φ junction realization. PMID:23636963

  19. Individual SWCNT based ionic field effect transistor

    NASA Astrophysics Data System (ADS)

    Pang, Pei; He, Jin; Park, Jae Hyun; Krstic, Predrag; Lindsay, Stuart

    2011-03-01

    Here we report that the ionic current through a single-walled carbon nanotube (SWCNT) can be effectively gated by a perpendicular electrical field from a top gate electrode, working as ionic field effect transistor. Both our experiment and simulation confirms that the electroosmotic current (EOF) is the main component in the ionic current through the SWCNT and is responsible for the gating effect. We also studied the gating efficiency as a function of solution concentration and pH and demonstrated that the device can work effectively in the physiological relevant condition. This work opens the door to use CNT based nanofluidics for ion and molecule manipulation. This work was supported by the DNA Sequencing Technology Program of the National Human Genome Research Institute (1RC2HG005625-01, 1R21HG004770-01), Arizona Technology Enterprises and the Biodesign Institute.

  20. Parametric resonance in nanoelectromechanical single electron transistors.

    PubMed

    Midtvedt, Daniel; Tarakanov, Yury; Kinaret, Jari

    2011-04-13

    We show that the coupling between single-electron charging and mechanical motion in a nanoelectromechanical single-electron transistor can be utilized in a novel parametric actuation scheme. This scheme, which relies on a periodic modulation of the mechanical resonance frequency through an alternating source-drain voltage, leads to a parametric instability and emergence of mechanical vibrations in a limited range of modulation amplitudes. Remarkably, the frequency range where instability occurs and the maximum oscillation amplitude, depend weakly on the damping in the system. We also show that a weak parametric modulation increases the effective quality factor and amplifies the system's response to the conventional actuation that exploits an AC gate signal. PMID:21375279

  1. Symmetry-protected adiabatic quantum transistors

    NASA Astrophysics Data System (ADS)

    Williamson, Dominic J.; Bartlett, Stephen D.

    2015-05-01

    Adiabatic quantum transistors (AQT) allow quantum logic gates to be performed by applying a large field to a quantum many-body system prepared in its ground state, without the need for local control. The basic operation of such a device can be viewed as driving a spin chain from a symmetry-protected (SP) phase to a trivial phase. This perspective offers an avenue to generalize the AQT and to design several improvements. The performance of quantum logic gates is shown to depend only on universal symmetry properties of a SP phase rather than any fine tuning of the Hamiltonian, and it is possible to implement a universal set of logic gates in this way by combining several different types of SP matter. Such SP AQTs are argued to be robust to a range of relevant noise processes.

  2. Antiferromagnetic Spin Wave Field-Effect Transistor.

    PubMed

    Cheng, Ran; Daniels, Matthew W; Zhu, Jian-Gang; Xiao, Di

    2016-01-01

    In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale. PMID:27048928

  3. Antiferromagnetic Spin Wave Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Cheng, Ran; Daniels, Matthew W.; Zhu, Jian-Gang; Xiao, Di

    2016-04-01

    In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale.

  4. Polycrystalline silicon ion sensitive field effect transistors

    NASA Astrophysics Data System (ADS)

    Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

    2005-01-01

    We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

  5. Antiferromagnetic Spin Wave Field-Effect Transistor

    PubMed Central

    Cheng, Ran; Daniels, Matthew W.; Zhu, Jian-Gang; Xiao, Di

    2016-01-01

    In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale. PMID:27048928

  6. Antiferromagnetic Spin Wave Field-Effect Transistor

    DOE PAGESBeta

    Cheng, Ran; Daniels, Matthew W.; Zhu, Jian-Gang; Xiao, Di

    2016-04-06

    In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. In conclusion, our findings open up the exciting possibilitymore » of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale.« less

  7. Simulation of phosphorene Schottky-barrier transistors

    NASA Astrophysics Data System (ADS)

    Wan, Runlai; Cao, Xi; Guo, Jing

    2014-10-01

    Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced ambipolar I-V characteristics and significant increase of the minimal leakage current. The problem of leakage is especially severe when the gate insulator is thin and the number of layer is large, but can be effectively suppressed by reducing phosphorene to mono or bilayer. Different from two-dimensional graphene and layered dichalcogenide materials, both the ON-current of the phosphorene SBFETs and the metal-semiconductor contact resistance between metal and phosphorene strongly depend on the transport crystalline direction.

  8. Vibrationally mediated transport in molecular transistors

    NASA Astrophysics Data System (ADS)

    Santamore, D. H.; Lambert, Neill; Nori, Franco

    2013-02-01

    We investigate the steady-state electronic transport through a suspended dimer molecule coupled to leads. When strongly coupled to a vibrational mode, the electron transport is enhanced at the phonon resonant frequency and higher order resonances. The temperature and bias determine the nature of the phonon-assisted resonances, with clear absorption and emission peaks. The strong coupling also induces a Frank-Condon-like blockade, suppressing the current between the resonances. We compare an analytical polaron transformation method to two exact numerical methods: the Hierarchy equations of motion and an exact diagonalization in the Fock basis. In the steady state, our two numerical results are an exact match and qualitatively reflect the main features of the polaron treatment. Our results indicate the possibility of a new type of molecular transistor or sensor where the current can be extremely sensitive to small changes in the energies of the electronic states in the dimer.

  9. Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor-acceptor dyads

    NASA Astrophysics Data System (ADS)

    Treier, Matthias; Liscio, Andrea; Mativetsky, Jeffrey M.; Kastler, Marcel; Müllen, Klaus; Palermo, Vincenzo; Samorì, Paolo

    2012-02-01

    We report on the formation of photoconductive self-assembled fibres by solvent induced precipitation of a HBC-PMI donor-acceptor dyad. Kelvin Probe Force Microscopy revealed that upon illumination with white light the surface potential of the fibres shifted to negative values due to a build-up of negative charge. When integrated in a field-effect transistor (FET) configuration, the devices can be turned `on' much more efficiently using light than conventional bias triggered field-effect, suggesting that these structures could be used for the fabrication of light sensing devices. Such a double gating represents an important step towards bi-functional organic FETs, in which the current through the junction can be modulated both optically (by photoexcitation) and electrically (by gate control).We report on the formation of photoconductive self-assembled fibres by solvent induced precipitation of a HBC-PMI donor-acceptor dyad. Kelvin Probe Force Microscopy revealed that upon illumination with white light the surface potential of the fibres shifted to negative values due to a build-up of negative charge. When integrated in a field-effect transistor (FET) configuration, the devices can be turned `on' much more efficiently using light than conventional bias triggered field-effect, suggesting that these structures could be used for the fabrication of light sensing devices. Such a double gating represents an important step towards bi-functional organic FETs, in which the current through the junction can be modulated both optically (by photoexcitation) and electrically (by gate control). Electronic supplementary information (ESI) available: Experimental details and photoresponse on spin-coated film (3 pages). See DOI: 10.1039/c2nr11635a

  10. Gravitational wave bursts from cosmic superstrings with Y-junctions

    SciTech Connect

    Binetruy, P.; Bohe, A.; Hertog, T.; Steer, D. A.

    2009-12-15

    Cosmic superstring loops generically contain strings of different tensions that meet at Y-junctions. These loops evolve nonperiodically in time, and have cusps and kinks that interact with the junctions. We study the effect of junctions on the gravitational wave signal emanating from cosmic string cusps and kinks. We find that earlier results on the strength of individual bursts from cusps and kinks on strings without junctions remain largely unchanged, but junctions give rise to additional contributions to the gravitational wave signal coming from strings expanding at the speed of light at a junction and kinks passing through a junction.

  11. Transferred substrate heterojunction bipolar transistors for submillimeter wave applications

    NASA Technical Reports Server (NTRS)

    Fung, A.; Samoska, L.; Siegel, P.; Rodwell, M.; Urteaga, M.; Paidi, V.

    2003-01-01

    We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.

  12. Design considerations for FET-gated power transistors

    NASA Technical Reports Server (NTRS)

    Chen, D. Y.; Chin, S. A.

    1983-01-01

    An FET-bipolar combinational power transistor configuration (tested up to 300 V, 20 A at 100 kHz) is described. The critical parameters for integrating the chips in hybrid form are examined, and an effort to optimize the overall characteristics of the configuration is discussed. Chip considerations are examined with respect to the voltage and current rating of individual chips, the FET surge capability, the choice of triple diffused transistor or epitaxial transistor for the bipolar element, the current tailing effect, and the implementation of the bipolar transistor and an FET as single chip or separate chips. Package considerations are discussed with respect to package material and geometry, surge current capability of bipolar base terminal bonding, and power losses distribution.

  13. Review of Heterojunctin Bipolar Transistor Structure, Applications, and Reliability

    NASA Technical Reports Server (NTRS)

    Lee, C.; Kayali, S.

    1993-01-01

    Heterojunction Bipolar Transistors (HBTs) are increasingly employed in high frequency, high linerity, and high efficiency applications. As the utilization of these devices becomes more widespread, their operation will be viewed with more scrutiny.

  14. A nanoscale piezoelectric transformer for low-voltage transistors.

    PubMed

    Agarwal, Sapan; Yablonovitch, Eli

    2014-11-12

    A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications. PMID:25343519

  15. Development and fabrication of improved power transistor switches

    NASA Technical Reports Server (NTRS)

    Hower, P. L.; Chu, C. K.

    1979-01-01

    A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.

  16. A Field-Effect Transistor (FET) model for ASAP

    NASA Technical Reports Server (NTRS)

    Ming, L.

    1965-01-01

    The derivation of the circuitry of a field effect transistor (FET) model, the procedure for adapting the model to automated statistical analysis program (ASAP), and the results of applying ASAP on this model are described.

  17. U. H. F. Power Transistors and Lecher Line Oscillators.

    ERIC Educational Resources Information Center

    Howes, R. W.

    1980-01-01

    Describes the use of transistors instead of valves for Lecher line and radiation demonstrations. Two oscillator circuits which provide power for Lecher line use are described. Impedance of Lecher line is also discussed. (HM)

  18. Focused Ion Beam Induced Effects on MOS Transistor Parameters

    SciTech Connect

    Abramo, Marsha T.; Antoniou, Nicholas; Campbell, Ann N.; Fleetwood, Daniel M.; Hembree, Charles E.; Jessing, Jeffrey R.; Soden, Jerry M.; Swanson, Scot E.; Tangyunyong, Paiboon; Vanderlinde, William E.

    1999-07-28

    We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

  19. Lateral PNP bipolar transistor with aiding field diffusions

    NASA Technical Reports Server (NTRS)

    Gallagher, R. C.; Mc Cann, D. H.

    1969-01-01

    Fabrication technique produces field aided lateral PNP transistors compatible with micropower switching circuits. The sub-collector diffusion is performed with phosphorus as the dopant and the epitaxy is grown using the higher temperature silicon tetrachloride process.

  20. Effects of dielectric material properties on graphene transistor performance

    NASA Astrophysics Data System (ADS)

    Jang, Sung Kyu; Jeon, Jaeho; Jeon, Su Min; Song, Young Jae; Lee, Sungjoo

    2015-07-01

    Graphene has attracted attention due to its excellent electrical properties; however, the electrical performance of graphene devices, including device hysteresis, mobility, and conductivity, tends to be limited by the supporting dielectric layer properties. In this work, the impact of a dielectric material on a graphene transistor was investigated by fabricating graphene field effect transistors integrated with four different dielectric substrates (SiO2, Al2O3, Si3N4 and hexagonal boron nitride) and by comparing the transistor performances. Results revealed that the carrier transport characteristics of the graphene transistors, including the hysteresis, Dirac point shift, and mobility, were highly correlated with the hydrophobicity-induced charge trapping and surface optical phonon energies of the dielectric materials.

  1. Light programmable organic transistor memory device based on hybrid dielectric

    NASA Astrophysics Data System (ADS)

    Ren, Xiaochen; Chan, Paddy K. L.

    2013-09-01

    We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

  2. Molecular junctions: Single-molecule contacts exposed

    NASA Astrophysics Data System (ADS)

    Nichols, Richard J.; Higgins, Simon J.

    2015-05-01

    Using a scanning tunnelling microscopy-based method it is now possible to get an atomistic-level description of the most probable binding and contact configuration for single-molecule electrical junctions.

  3. Computing Scattering Characteristics Of Waveguide Junctions

    NASA Technical Reports Server (NTRS)

    Hoppe, Daniel J.; Manshadi, Farzin

    1994-01-01

    Rectangular WaveGuide Junction SCATtering RWGSCAT computer program solves scattering properties of waveguide device. Modeled as assembly of rectangular waveguides of different cross sections. RWGSCAT written in FORTRAN 77.

  4. Chirality effect in disordered graphene ribbon junctions

    NASA Astrophysics Data System (ADS)

    Long, Wen

    2012-05-01

    We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon.

  5. Adrenocortical Gap Junctions and Their Functions

    PubMed Central

    Bell, Cheryl L.; Murray, Sandra A.

    2016-01-01

    Adrenal cortical steroidogenesis and proliferation are thought to be modulated by gap junction-mediated direct cell–cell communication of regulatory molecules between cells. Such communication is regulated by the number of gap junction channels between contacting cells, the rate at which information flows between these channels, and the rate of channel turnover. Knowledge of the factors regulating gap junction-mediated communication and the turnover process are critical to an understanding of adrenal cortical cell functions, including development, hormonal response to adrenocorticotropin, and neoplastic dedifferentiation. Here, we review what is known about gap junctions in the adrenal gland, with particular attention to their role in adrenocortical cell steroidogenesis and proliferation. Information and insight gained from electrophysiological, molecular biological, and imaging (immunocytochemical, freeze fracture, transmission electron microscopic, and live cell) techniques will be provided. PMID:27445985

  6. Current trends in salivary gland tight junctions.

    PubMed

    Baker, Olga J

    2016-01-01

    Tight junctions form a continuous intercellular barrier between epithelial cells that is required to separate tissue spaces and regulate selective movement of solutes across the epithelium. They are composed of strands containing integral membrane proteins (e.g., claudins, occludin and tricellulin, junctional adhesion molecules and the coxsackie adenovirus receptor). These proteins are anchored to the cytoskeleton via scaffolding proteins such as ZO-1 and ZO-2. In salivary glands, tight junctions are involved in polarized saliva secretion and barrier maintenance between the extracellular environment and the glandular lumen. This review seeks to provide an overview of what is currently known, as well as the major questions and future research directions, regarding tight junction expression, organization and function within salivary glands. PMID:27583188

  7. Local Frame Junction Trees in SLAM

    NASA Astrophysics Data System (ADS)

    Kuehnel, Frank O.

    2005-11-01

    Junction trees (JT) is a general purpose tool for exact inference on graphical models. Many of the existing algorithms for building junction trees require a fixed static graphical model. The construction process is not unique, finding the one with the best computational structure (smallest clique size) is also a hard problem. For large scale inference problems, such as Geo-referencing using triangular geodetic networks or equivalent, the simultaneous localization and mapping (SLAM) problem in robotics pose some challenges to junction tree applications. Incremental junction tree techniques for dynamic graphical models prescribe heuristic methods for growing the tree structure, and are applicable to large scale graphical models. Of concern are the proliferative widening of the tree, which makes message passing expensive. In the context of SLAM we present a new apporach that exploits the local frame dependence of novel observation variables.

  8. Superconducting switch made of graphene nanoribbon junctions

    NASA Astrophysics Data System (ADS)

    Liang, Qifeng; Dong, Jinming

    2008-09-01

    The transmission of superconductor-graphene nanoribbon-superconductor junctions (SGS) has been studied by the non-equilibrium Green's function method. It is found that the on-site potential U in the center zigzag graphene nanoribbon (ZGNR) of the SGS junction plays an important role in the magnitude of the supercurrent Ic. As the effective Fermi energy μeff (μeff = μF-U) goes from negative to positive, the SGS junction would suddenly transform from an 'OFF' state to an 'ON' state. And, as μeff increases further, the Ic will continue to increase. This switching behavior of the SGS junction shares the same origin with the zigzag GNR valley-isospin valve (Rycerz et al 2007 Nat. Phys. 3 172). Besides the valley-isospin, the density of states will also have an effect on the suppression of Ic.

  9. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect

    Chang, P. C.; Baca, A. G.; Li, N. Y.; Xie, X. M.; Hou, H. Q.; Armour, E.

    2000-04-17

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  10. Correlated full-field and pointwise temporally resolved measurements of thermomechanical stress inside an operating power transistor

    NASA Astrophysics Data System (ADS)

    Borza, Dan N.; Gautrelet, Christophe

    2015-01-01

    The paper describes a measurement system based on time-resolved speckle interferometry, able to record long series of thermally induced full-field deformation maps of die and wire bonds inside an operating power transistor. The origin of the deformation is the transistor heating during its normal operation. The full-field results consist in completely unwrapped deformation maps for out-of-plane displacements greater than 14 μm, with nanometer resolution, in presence of discontinuities due to structural and material inhomogeneity. These measurements are synchronized with the measurement of heatsink temperature and of base-emitter junction temperature, so as to provide data related to several interacting physical parameters. The temporal histories of the displacement are also accessible for any point. They are correlated with the thermal and electrical time series. Mechanical full-field curvatures may also be estimated, making these measurements useful for inspecting physical origins of thermomechanical stresses and for interacting with numerical models used in reliability-related studies.

  11. Experimental synchronization of chaos in a large ring of mutually coupled single-transistor oscillators: Phase, amplitude, and clustering effects

    SciTech Connect

    Minati, Ludovico E-mail: ludovico.minati@unitn.it

    2014-12-01

    In this paper, experimental evidence of multiple synchronization phenomena in a large (n = 30) ring of chaotic oscillators is presented. Each node consists of an elementary circuit, generating spikes of irregular amplitude and comprising one bipolar junction transistor, one capacitor, two inductors, and one biasing resistor. The nodes are mutually coupled to their neighbours via additional variable resistors. As coupling resistance is decreased, phase synchronization followed by complete synchronization is observed, and onset of synchronization is associated with partial synchronization, i.e., emergence of communities (clusters). While component tolerances affect community structure, the general synchronization properties are maintained across three prototypes and in numerical simulations. The clusters are destroyed by adding long distance connections with distant notes, but are otherwise relatively stable with respect to structural connectivity changes. The study provides evidence that several fundamental synchronization phenomena can be reliably observed in a network of elementary single-transistor oscillators, demonstrating their generative potential and opening way to potential applications of this undemanding setup in experimental modelling of the relationship between network structure, synchronization, and dynamical properties.

  12. Junction Plasmon-Induced Molecular Reorientation

    SciTech Connect

    El-Khoury, Patrick Z.; Hu, Dehong; Hess, Wayne P.

    2013-10-17

    Time and frequency dependent intensity variations in sequences of Raman spectra recorded at plasmonic junctions can be assigned to molecular reorientation. This is revealed through Raman trajectories recorded at a nanojunction formed between a silver AFM tip and a corrugated silver surface coated with biphenyl-4,4’-dithiol. Molecular motion is not observed when the tip is retracted and only surface enhancement is operative. In effect, junction plasmon induced molecular reorientation is tracked.

  13. Spectroscopy Measurements of Magnesium Diboride Josephson Junctions

    NASA Astrophysics Data System (ADS)

    Mlack, J. T.; Lambert, J. G.; Carabello, S. A.; Thrailkill, Z. E.; Galwaduge, P. T.; Ramos, R. C.

    2010-03-01

    MgB2 has the highest Tc of the conventional superconductors at 39K and exhibits two superconducting energy bands. This material is also inexpensive to produce and has been utilized in new designs for MRI, RF cavities, and Josephson junctions. We report results of recent spectroscopy and transport measurements of Josephson junctions made of MgB2 obtained from our collaborators. We investigate its transport characteristics at sub-kelvin temperatures as well as its responses to resonant microwave activation.

  14. Semiconductor tunnel junction with enhancement layer

    DOEpatents

    Klem, J.F.; Zolper, J.C.

    1997-10-21

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

  15. Quantum Coherence in a Superfluid Josephson Junction

    SciTech Connect

    Narayana, Supradeep; Sato, Yuki

    2011-02-04

    We report a new kind of experiment in which we take an array of nanoscale apertures that form a superfluid {sup 4}He Josephson junction and apply quantum phase gradients directly along the array. We observe collective coherent behaviors from aperture elements, leading to quantum interference. Connections to superconducting and Bose-Einstein condensate Josephson junctions as well as phase coherence among the superfluid aperture array are discussed.

  16. Semiconductor tunnel junction with enhancement layer

    DOEpatents

    Klem, John F.; Zolper, John C.

    1997-01-01

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

  17. Supercurrent switch in graphene pi junctions.

    PubMed

    Linder, Jacob; Yokoyama, Takehito; Huertas-Hernando, Daniel; Sudbø, Asle

    2008-05-01

    We study the supercurrent in a superconductor/ferromagnet/superconductor graphene junction. In contrast to its metallic counterpart, the oscillating critical current in our setup decays only weakly upon increasing the exchange field and junction width. We find an unusually large residual value of the supercurrent at the oscillatory cusps due to a strong deviation from a sinusoidal current-phase relationship. Our findings suggest a very efficient device for dissipationless supercurrent switching. PMID:18518411

  18. Supercurrent Switch in Graphene π Junctions

    NASA Astrophysics Data System (ADS)

    Linder, Jacob; Yokoyama, Takehito; Huertas-Hernando, Daniel; Sudbø, Asle

    2008-05-01

    We study the supercurrent in a superconductor/ferromagnet/superconductor graphene junction. In contrast to its metallic counterpart, the oscillating critical current in our setup decays only weakly upon increasing the exchange field and junction width. We find an unusually large residual value of the supercurrent at the oscillatory cusps due to a strong deviation from a sinusoidal current-phase relationship. Our findings suggest a very efficient device for dissipationless supercurrent switching.

  19. Heterojunction bipolar transistor technology for data acquisition and communication

    NASA Technical Reports Server (NTRS)

    Wang, C.; Chang, M.; Beccue, S.; Nubling, R.; Zampardi, P.; Sheng, N.; Pierson, R.

    1992-01-01

    Heterojunction Bipolar Transistor (HBT) technology has emerged as one of the most promising technologies for ultrahigh-speed integrated circuits. HBT circuits for digital and analog applications, data conversion, and power amplification have been realized, with speed performance well above 20 GHz. At Rockwell, a baseline AlGaAs/GaAs HBT technology has been established in a manufacturing facility. This paper describes the HBT technology, transistor characteristics, and HBT circuits for data acquisition and communication.

  20. Self-oscillation in electrochemical transistors: An RLC modeling approach

    NASA Astrophysics Data System (ADS)

    Tu, Deyu; Forchheimer, Robert

    2012-03-01

    We propose an RLC model for PEDOT:PSS electrochemical transistors to interpret the persistent oscillating currents observed in experiments. The electrochemical reaction is represented by an inductor in the equivalent circuit. The simulation results show that an electrochemical device can be operated as normal transistors or oscillators under different voltage bias. This model predicts that analog circuit functions can be realized with "inductor-like" electrochemical devices.