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Sample records for large-area atomic layer

  1. Large-area thermoelectric high-aspect-ratio nanostructures by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ruoho, Mikko; Juntunen, Taneli; Tittonen, Ilkka

    2016-09-01

    We report on the thermoelectric properties of large-area high-aspect-ratio nanostructures. We fabricate the structures by atomic layer deposition of conformal ZnO thin films on track-etched polycarbonate substrate. The resulting structure consists of ZnO tubules which continue through the full thickness of the substrate. The electrical and thermal properties of the structures are studied both in-plane and out-of-plane. They exhibit very low out-of-plane thermal conductivity down to 0.15 W m‑1 K‑1 while the in-plane sheet resistance of the films was found to be half that of the same film on glass substrate, allowing material-independent doubling of output power of any planar thin-film thermoelectric generator. The wall thickness of the fabricated nanotubes was varied within a range of up to 100 nm. The samples show polycrystalline nature with (002) preferred crystal orientation.

  2. Large-Area Quality Control of Atomically-Thin Layered Materials

    NASA Astrophysics Data System (ADS)

    Nolen, Craig Merten

    Fast progress in chemical vapor deposition of graphene and other quasi-two-dimensional layered materials such as topological insulators call for development of a reliable high-throughput method of layered materials identification and quality control. The number of atomic planes in graphene or other ultra-thin films has to be determined very fast and over large wafer-scale areas. The previously existed methods of accurate counting of the number of atomic planes in few-layer graphene were primarily based on micro-Raman spectroscopy. These methods were local, slow, and could not be scaled up to characterize the whole wafers. In this dissertation research I proposed and developed an automatic approach for graphene inspection over the wafer-size areas. The proposed method can be scaled up for industrial use. It is based on the image processing analysis of the pseudo-color contrasts uniquely assigned to each few-layer graphene region characterized by a specific number of atomic planes. The initial calibration of the technique is performed with the help of micro-Raman spectroscopy. The image processing is also used to account for the lighting non-uniformity of the samples. Implementation of the technique developed in this dissertation research reduces the cost and time required for graphene identification and quality assessment, and can become the next major impetus for practical applications of graphene, few-layer graphene and other atomically-thin films. The technique was tested on mechanically exfoliated graphene and then extended to the chemical-vapor-deposited graphene, and to bismuth telluride topological insulator thin films. The second part of the dissertation research deals with development of the electrostatic transfer process. The investigated approach allows one to transfer the patterned few-layer graphene films controllably to Si3N4 substrates compatible with other materials. The large-area quality control and graphene transfer techniques developed in this

  3. Large-area thermoelectric high-aspect-ratio nanostructures by atomic layer deposition.

    PubMed

    Ruoho, Mikko; Juntunen, Taneli; Tittonen, Ilkka

    2016-09-01

    We report on the thermoelectric properties of large-area high-aspect-ratio nanostructures. We fabricate the structures by atomic layer deposition of conformal ZnO thin films on track-etched polycarbonate substrate. The resulting structure consists of ZnO tubules which continue through the full thickness of the substrate. The electrical and thermal properties of the structures are studied both in-plane and out-of-plane. They exhibit very low out-of-plane thermal conductivity down to 0.15 W m(-1) K(-1) while the in-plane sheet resistance of the films was found to be half that of the same film on glass substrate, allowing material-independent doubling of output power of any planar thin-film thermoelectric generator. The wall thickness of the fabricated nanotubes was varied within a range of up to 100 nm. The samples show polycrystalline nature with (002) preferred crystal orientation. PMID:27454037

  4. Photoresponse properties of large-area MoS{sub 2} atomic layer synthesized by vapor phase deposition

    SciTech Connect

    Luo, Siwei; Qi, Xiang E-mail: jxzhong@xtu.edu.cn; Ren, Long; Hao, Guolin; Fan, Yinping; Liu, Yundan; Han, Weijia; Zang, Chen; Li, Jun; Zhong, Jianxin E-mail: jxzhong@xtu.edu.cn

    2014-10-28

    Photoresponse properties of a large area MoS{sub 2} atomic layer synthesized by vapor phase deposition method without any catalyst are studied. Scanning electron microscopy, atomic force microscopy, Raman spectrum, and photoluminescence spectrum characterizations confirm that the two-dimensional microstructures of MoS{sub 2} atomic layer are of high quality. Photoelectrical results indicate that the as-prepared MoS{sub 2} devices have an excellent sensitivity and a good reproducibility as a photodetector, which is proposed to be ascribed to the potential-assisted charge separation mechanism.

  5. Photoresponse properties of large-area MoS2 atomic layer synthesized by vapor phase deposition

    NASA Astrophysics Data System (ADS)

    Luo, Siwei; Qi, Xiang; Ren, Long; Hao, Guolin; Fan, Yinping; Liu, Yundan; Han, Weijia; Zang, Chen; Li, Jun; Zhong, Jianxin

    2014-10-01

    Photoresponse properties of a large area MoS2 atomic layer synthesized by vapor phase deposition method without any catalyst are studied. Scanning electron microscopy, atomic force microscopy, Raman spectrum, and photoluminescence spectrum characterizations confirm that the two-dimensional microstructures of MoS2 atomic layer are of high quality. Photoelectrical results indicate that the as-prepared MoS2 devices have an excellent sensitivity and a good reproducibility as a photodetector, which is proposed to be ascribed to the potential-assisted charge separation mechanism.

  6. Atomically flat Ge buffer layers and alternating shutter growth of CaGe2 for large area germanane

    NASA Astrophysics Data System (ADS)

    Xu, Jinsong; Katoch, Jyoti; Ahmed, Adam; Pinchuk, Igor; Williams, Robert; McComb, David; Kawakami, Roland

    Germanane (GeH), which is converted from CaGe2 by soaking in HCl acid, has recently attracted interest because of its novel properties, such as large band gap (1.56eV), spin orbit coupling and predictions of high mobility (18000 cm2/Vs). Previously CaGe2 was successfully grown on Ge(111) substrates by molecular beam epitaxy (MBE) growth. But there were cracks between µm-sized islands, which is not desirable for scientific study and application, and limits the material quality. By growing atomically flat Ge buffer layers and using alternating shutter MBE growth, we are able to grow crack-free, large area films of CaGe2 films. Reflection high energy electron diffraction (RHEED) patterns of Ge buffer layer and CaGe2 indicates high quality two dimensional surfaces, which is further confirmed by atomic force microscopy (AFM), showing atomically flat and uniform Ge buffer layer and CaGe2. The appearance of Laue oscillation in X-ray diffraction (XRD) and Kiessig fringes in X-ray reflectivity (XRR) proves the uniformity of CaGe2 film and the smoothness of the interface. The high quality of CaGe2 film makes it promising to explore novel properties of GeH. Funded by NSF MRSEC DMR-1420451.

  7. Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hussain, Sajjad; Shehzad, Muhammad Arslan; Vikraman, Dhanasekaran; Khan, Muhammad Farooq; Singh, Jai; Choi, Dong-Chul; Seo, Yongho; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-02-01

    In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ~21 cm2 V-1 s-1 (bilayer) and ~25 cm2 V-1 s-1 (trilayer), on/off ratios in the range of ~107 (bilayer) and 104-105 (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications.In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ~21 cm2 V-1 s-1 (bilayer) and ~25 cm2 V-1 s-1 (trilayer), on/off ratios in the range of ~107 (bilayer) and 104-105 (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications. Electronic supplementary information (ESI) available: HRTEM images, XPS spectra and electrical properties. More Raman measurement spectra are obtained for MoS2 films

  8. Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering.

    PubMed

    Hussain, Sajjad; Shehzad, Muhammad Arslan; Vikraman, Dhanasekaran; Khan, Muhammad Farooq; Singh, Jai; Choi, Dong-Chul; Seo, Yongho; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-02-21

    In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ∼21 cm(2) V(-1) s(-1) (bilayer) and ∼25 cm(2) V(-1) s(-1) (trilayer), on/off ratios in the range of ∼10(7) (bilayer) and 10(4)-10(5) (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications. PMID:26838294

  9. Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate.

    PubMed

    Cui, Fangfang; Wang, Cong; Li, Xiaobo; Wang, Gang; Liu, Kaiqiang; Yang, Zhou; Feng, Qingliang; Liang, Xing; Zhang, Zhongyue; Liu, Shengzhong; Lei, Zhibin; Liu, Zonghuai; Xu, Hua; Zhang, Jin

    2016-07-01

    Anisotropic 2D layered material rhenium disulfide (ReS2 ) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 °C) and sulfur precursors in the temperature range of 460-900 °C with high efficiency. PMID:27121002

  10. Atomic Layers: Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate (Adv. Mater. 25/2016).

    PubMed

    Cui, Fangfang; Wang, Cong; Li, Xiaobo; Wang, Gang; Liu, Kaiqiang; Yang, Zhou; Feng, Qingliang; Liang, Xing; Zhang, Zhongyue; Liu, Shengzhong; Lei, Zhibin; Liu, Zonghuai; Xu, Hua; Zhang, Jin

    2016-07-01

    H. Xu, J. Zhang, and co-workers synthesize anisotropic 2D-layered rhenium disulfide with high crystal quality and uniform monolayer thickness. As described on page 5019, tellurium-assisted epitaxial growth on a mica substrate is chosen to generate such structures. PMID:27372721

  11. Exfoliation of large-area transition metal chalcogenide single layers

    PubMed Central

    Magda, Gábor Zsolt; Pető, János; Dobrik, Gergely; Hwang, Chanyong; Biró, László P.; Tapasztó, Levente

    2015-01-01

    Isolating large-areas of atomically thin transition metal chalcogenide crystals is an important but challenging task. The mechanical exfoliation technique can provide single layers of the highest structural quality, enabling to study their pristine properties and ultimate device performance. However, a major drawback of the technique is the low yield and small (typically < 10 μm) lateral size of the produced single layers. Here, we report a novel mechanical exfoliation technique, based on chemically enhanced adhesion, yielding MoS2 single layers with typical lateral sizes of several hundreds of microns. The idea is to exploit the chemical affinity of the sulfur atoms that can bind more strongly to a gold surface than the neighboring layers of the bulk MoS2 crystal. Moreover, we found that our exfoliation process is not specific to MoS2, but can be generally applied for various layered chalcogenides including selenites and tellurides, providing an easy access to large-area 2D crystals for the whole class of layered transition metal chalcogenides. PMID:26443185

  12. Ultrahigh conductivity of large area suspended few layer graphene films

    NASA Astrophysics Data System (ADS)

    Rouhi, Nima; Wang, Yung Yu; Burke, Peter J.

    2012-12-01

    Room-temperature (atmospheric-pressure) electrical conductivity measurements of wafer-scale, large-area suspended (few layer) graphene membranes with areas up to 1000 μm2 (30 μm × 30 μm) are presented. Multiple devices on one wafer can be fabricated with high yield from the same chemical vapor deposition grown graphene sheet, transferred from a nickel growth substrate to large opening in a suspended silicon nitride support membrane. This represents areas two to orders of magnitude larger than prior transport studies on any suspended graphene device (single or few layer). We find a sheet conductivity of ˜2500 e2/h (or about 10 Ω/sq) of the suspended graphene, which is an order of magnitude higher than any previously reported sheet conductance of few layer graphene.

  13. Edge field emission of large-area single layer graphene

    NASA Astrophysics Data System (ADS)

    Kleshch, Victor I.; Bandurin, Denis A.; Orekhov, Anton S.; Purcell, Stephen T.; Obraztsov, Alexander N.

    2015-12-01

    Field electron emission from the edges of large-area (∼1 cm × 1 cm) graphene films deposited onto quartz wafers was studied. The graphene was previously grown by chemical vapour deposition on copper. An extreme enhancement of electrostatic field at the edge of the films with macroscopically large lateral dimensions and with single atom thickness was achieved. This resulted in the creation of a blade type electron emitter, providing stable field emission at low-voltage with linear current density up to 0.5 mA/cm. A strong hysteresis in current-voltage characteristics and a step-like increase of the emission current during voltage ramp up were observed. These effects were explained by the local mechanical peeling of the graphene edge from the quartz substrate by the ponderomotive force during the field emission process. Specific field emission phenomena exhibited in the experimental study are explained by a unique combination of structural, electronic and mechanical properties of graphene. Various potential applications ranging from linear electron beam sources to microelectromechanical systems are discussed.

  14. Large area growth of layered WSe2 films

    NASA Astrophysics Data System (ADS)

    Browning, Robert; Kuperman, Neal; Solanki, Raj; Kanzyuba, Vasily; Rouvimov, Sergei

    2016-09-01

    Growth of smooth and continuous films of WSe2 has been demonstrated by employing atomic layer deposition (ALD) on 5 cm × 5 cm substrates. The substrates consisted of silicon wafers with a layer of SiO2. The ALD precursors were WCl5 and H2Se. The film properties characterized using Raman spectroscopy and x-ray photoelectron spectroscopy are comparable to those reported for WSe2 films produced by chemical vapor deposition and exfoliation. Carrier mobilities were determined with back-gated transistors. With Pd contacts, median electron and hole mobilities of 531 cm2 V‑1 s‑1 and 354 cm2 V‑1 s‑1, respectively, were measured.

  15. Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2.

    PubMed

    Zhou, Lin; Xu, Kai; Zubair, Ahmad; Liao, Albert D; Fang, Wenjing; Ouyang, Fangping; Lee, Yi-Hsien; Ueno, Keiji; Saito, Riichiro; Palacios, Tomás; Kong, Jing; Dresselhaus, Mildred S

    2015-09-23

    The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe2) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, we developed a chemical vapor deposition synthesis to produce large-area, uniform, and highly crystalline few-layer 2H and 1T' MoTe2 films. It was found that these two different phases of MoTe2 can be grown depending on the choice of Mo precursor. Because of the highly crystalline structure, the as-grown few-layer 2H MoTe2 films display electronic properties that are comparable to those of mechanically exfoliated MoTe2 flakes. Our growth method paves the way for the large-scale application of MoTe2 in high-performance nanoelectronics and optoelectronics. PMID:26305492

  16. Fabricating Large-Area Sheets of Single-Layer Graphene by CVD

    NASA Technical Reports Server (NTRS)

    Bronikowski, Michael; Manohara, Harish

    2008-01-01

    This innovation consists of a set of methodologies for preparing large area (greater than 1 cm(exp 2)) domains of single-atomic-layer graphite, also called graphene, in single (two-dimensional) crystal form. To fabricate a single graphene layer using chemical vapor deposition (CVD), the process begins with an atomically flat surface of an appropriate substrate and an appropriate precursor molecule containing carbon atoms attached to substituent atoms or groups. These molecules will be brought into contact with the substrate surface by being flowed over, or sprayed onto, the substrate, under CVD conditions of low pressure and elevated temperature. Upon contact with the surface, the precursor molecules will decompose. The substituent groups detach from the carbon atoms and form gas-phase species, leaving the unfunctionalized carbon atoms attached to the substrate surface. These carbon atoms will diffuse upon this surface and encounter and bond to other carbon atoms. If conditions are chosen carefully, the surface carbon atoms will arrange to form the lowest energy single-layer structure available, which is the graphene lattice that is sought. Another method for creating the graphene lattice includes metal-catalyzed CVD, in which the decomposition of the precursor molecules is initiated by the catalytic action of a catalytic metal upon the substrate surface. Another type of metal-catalyzed CVD has the entire substrate composed of catalytic metal, or other material, either as a bulk crystal or as a think layer of catalyst deposited upon another surface. In this case, the precursor molecules decompose directly upon contact with the substrate, releasing their atoms and forming the graphene sheet. Atomic layer deposition (ALD) can also be used. In this method, a substrate surface at low temperature is covered with exactly one monolayer of precursor molecules (which may be of more than one type). This is heated up so that the precursor molecules decompose and form one

  17. Noise-Immune Conjugate Large-Area Atom Interferometers

    SciTech Connect

    Chiow Shengwey; Herrmann, Sven; Chu, Steven; Mueller, Holger

    2009-07-31

    We present a pair of simultaneous conjugate Ramsey-Borde atom interferometers using large (20(Planck constant/2pi)k)-momentum transfer beam splitters, where (Planck constant/2pi)k is the photon momentum. Simultaneous operation allows for common-mode rejection of vibrational noise. This allows us to surpass the enclosed space-time area of previous interferometers with a splitting of 20(Planck constant/2pi)k by a factor of 2500. Using a splitting of 10(Planck constant/2pi)k, we demonstrate a 3.4 ppb resolution in the measurement of the fine structure constant. Examples for applications in tests of fundamental laws of physics are given.

  18. Large area hexagonal boron nitride monolayer as efficient atomically thick insulating coating against friction and oxidation.

    PubMed

    Li, Xuemei; Yin, Jun; Zhou, Jianxin; Guo, Wanlin

    2014-03-14

    Coating is the most widely applied technology to improve surface properties of substrates, and nanotechnology has been playing an important role in enhancing the coating performance. However, the tunability of surface properties by a single atomic layer remains poorly understood. Here we demonstrate that a chemical vapor deposited hexagonal boron nitride (h-BN) monolayer of large area and high quality can serve as a perfect coating to significantly improve friction, oxidation and electric resistance of the substrates. The exceptional low friction and insulation of h-BN monolayer coating facilitate the characterization of the h-BN film vividly by atomic force microscopy, showing the h-BN monolayer consists of domains with size within a few micrometers. This excellent coating performance together with the exceptional high thermal and chemical stability make the h-BN monolayer a promising coating material. PMID:24532053

  19. Large-Area Atom Interferometry with Frequency-Swept Raman Adiabatic Passage.

    PubMed

    Kotru, Krish; Butts, David L; Kinast, Joseph M; Stoner, Richard E

    2015-09-01

    We demonstrate light-pulse atom interferometry with large-momentum-transfer atom optics based on stimulated Raman transitions and frequency-swept adiabatic rapid passage. Our atom optics have produced momentum splittings of up to 30 photon recoil momenta in an acceleration-sensitive interferometer for laser cooled atoms. We experimentally verify the enhancement of phase shift per unit acceleration and characterize interferometer contrast loss. By forgoing evaporative cooling and velocity selection, this method lowers the atom shot-noise-limited measurement uncertainty and enables large-area atom interferometry at higher data rates. PMID:26382675

  20. Large-Area Atomic Oxygen Facility Used to Clean Fire-Damaged Artwork

    NASA Technical Reports Server (NTRS)

    Rutledge, Sharon K.; Banks, Bruce A.; Steuber, Thomas J.; Sechkar, Edward A.

    2000-01-01

    In addition to completely destroying artwork, fires in museums and public buildings can soil a displayed artwork with so much accumulated soot that it can no longer be used for study or be enjoyed by the public. In situations where the surface has not undergone extensive charring or melting, restoration can be attempted. However, soot deposits can be very difficult to remove from some types of painted surfaces, particularly when the paint is fragile or flaking or when the top surface of the paint binder has been damaged. Restoration typically involves the use of organic solvents to clean the surface, but these solvents may cause the paint layers to swell or leach out. Also, immersion of the surface or swabbing during solvent cleaning may move or remove pigment through mechanical contact, especially if the fire damage extends into the paint binder. A noncontact technique of removing organic deposits from surfaces was developed out of NASA research on the effects of oxygen atoms on various materials. Atomic oxygen is present in the atmosphere surrounding the Earth at the altitudes where satellites typically orbit. It can react chemically with surface coatings or deposits that contain carbon. In the reaction, the carbon is converted to carbon monoxide and some carbon dioxide. Water vapor is also a byproduct of the reaction if the surface contains carbon-hydrogen bonds. To study this reaction, NASA developed Earth-based facilities to produce atomic oxygen for material exposure and testing. A vacuum facility designed and built by the Electro-Physics Branch of the NASA Glenn Research Center at Lewis Field to provide atomic oxygen over a large area for studying reactions in low Earth orbit has been used to successfully clean several full-size paintings. (This facility can accommodate paintings up to 1.5 by 2.1 m. The atomic oxygen plasma is produced between two large parallel aluminum plates using a radiofrequency power source operating at roughly 400 W. Atomic oxygen is

  1. Large-area, freestanding, single-layer graphene-gold: a hybrid plasmonic nanostructure.

    PubMed

    Iyer, Ganjigunte R Swathi; Wang, Jian; Wells, Garth; Guruvenket, Srinivasan; Payne, Scott; Bradley, Michael; Borondics, Ferenc

    2014-06-24

    Graphene-based plasmonic devices have recently drawn great attention. However, practical limitations in fabrication and device architectures prevent studies from being carried out on the intrinsic properties of graphene and their change by plasmonic structures. The influence of a quasi-infinite object (i.e., the substrate) on graphene, being a single sheet of carbon atoms, and the plasmonic device is overwhelming. To address this and put the intrinsic properties of the graphene-plasmonic nanostructures in focus, we fabricate large-area, freestanding, single-layer graphene-gold (LFG-Au) sandwich structures and Au nanoparticle decorated graphene (formed via thermal treatment) hybrid plasmonic nanostructures. We observed two distinct plasmonic enhancement routes of graphene unique to each structure via surface-enhanced Raman spectroscopy. The localized electronic structure variation in the LFG due to graphene-Au interaction at the nanoscale is mapped using scanning transmission X-ray microscopy. The measurements show an optical density of ∼0.007, which is the smallest experimentally determined for single-layer graphene thus far. Our results on freestanding graphene-Au plasmonic structures provide great insight for the rational design and future fabrication of graphene plasmonic hybrid nanostructures. PMID:24860924

  2. Large-area few-layer MoS2 deposited by sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Jyun-Hong; Chen, Hsing-Hung; Liu, Pang-Shiuan; Lu, Li-Syuan; Wu, Chien-Ting; Chou, Cheng-Tung; Lee, Yao-Jen; Li, Lain-Jong; Chang, Wen-Hao; Hou, Tuo-Hung

    2016-06-01

    Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1–1 μm with a trap charge density in grain boundaries of the order of 1013 cm–2.

  3. Tuning the thickness of electrochemically grafted layers in large area molecular junctions

    SciTech Connect

    Fluteau, T.; Bessis, C.; Barraud, C. Della Rocca, M. L.; Lafarge, P.; Martin, P.; Lacroix, J.-C.

    2014-09-21

    We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2–27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

  4. Physically-based failure analysis of shallow layered soil deposits over large areas

    NASA Astrophysics Data System (ADS)

    Cuomo, Sabatino; Castorino, Giuseppe Claudio; Iervolino, Aniello

    2014-05-01

    In the last decades, the analysis of slope stability conditions over large areas has become popular among scientists and practitioners (Cascini et al., 2011; Cuomo and Della Sala, 2013). This is due to the availability of new computational tools (Baum et al., 2002; Godt et al., 2008; Baum and Godt, 2012; Salciarini et al., 2012) - implemented in GIS (Geographic Information System) platforms - which allow taking into account the major hydraulic and mechanical issues related to slope failure, even for unsaturated soils, as well as the spatial variability of both topography and soil properties. However, the effectiveness (Sorbino et al., 2010) of the above methods it is still controversial for landslides forecasting especially depending on the accuracy of DTM (Digital Terrain Model) and for the chance that distinct triggering mechanisms may occur over large area. Among the major uncertainties, layering of soil deposits is of primary importance due to soil layer conductivity contrast and differences in shear strength. This work deals with the hazard analysis of shallow landslides over large areas, considering two distinct schematizations of soil stratigraphy, i.e. homogeneous or layered. To this purpose, the physically-based model TRIGRS (Baum et al., 2002) is firstly used, then extended to the case of layered deposit: specifically, a unique set of hydraulic properties is assumed while distinct soil unit weight and shear strength are considered for each soil layer. Both models are applied to a significant study area of Southern Italy, about 4 km2 large, where shallow deposits of air-fall volcanic (pyroclastic) soils have been affected by several landslides, causing victims, damages and economic losses. The achieved results highlight that soil volume globally mobilized over the study area highly depends on local stratigraphy of shallow deposits. This relates to the depth of critical slip surface which rarely corresponds to the bedrock contact where cohesionless coarse

  5. Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)

    SciTech Connect

    Velez-Fort, E.; Ouerghi, A.; Silly, M. G.; Sirtti, F.; Eddrief, M.; Marangolo, M.; Shukla, A.

    2014-03-03

    Structural and electronic properties of epitaxial graphene on 4H-SiC were studied before and after an atomic oxidation process. X-ray photoemission spectroscopy indicates that oxygen penetrates into the substrate and decouples a part of the interface layer. Raman spectroscopy demonstrates the increase of defects due to the presence of oxygen. Interestingly, we observed on the near edge x-ray absorption fine structure spectra a splitting of the π* peak into two distinct resonances centered at 284.7 and 285.2 eV. This double structure smears out after the oxidation process and permits to probe the interface architecture between graphene and the substrate.

  6. Large area nanoscale metal meshes for use as transparent conductive layers

    NASA Astrophysics Data System (ADS)

    Jin, Yuanhao; Li, Qunqing; Chen, Mo; Li, Guanhong; Zhao, Yudan; Xiao, Xiaoyang; Wang, Jiaping; Jiang, Kaili; Fan, Shoushan

    2015-10-01

    We report on the experimental realization of using super-aligned carbon nanotubes (SACNTs) as etching masks for the fabrication of large area nanoscale metal meshes. This method can easily be extended to different metals on both rigid and flexible substrates. The as-fabricated metal meshes, including the ones made of gold, copper, and aluminum, are suitable for use as transparent conductive layers (TCLs). The metal meshes, which are similar to the SACNT networks in their dimensional features of tens of nanometers, exhibit compatible performance in terms of optical transmittance and sheet resistance. Moreover, because the metal meshes are fabricated as an integrated material, there is no junction resistance between the interconnected metal nanostructures, which markedly lowers their sheet resistance at high temperatures. The fabrication of such an effective etching mask involves a simple drawing process of the SACNT networks prepared and a common deposition process. This approach should be easy to extend to various research fields and has broad prospects in commercial applications.We report on the experimental realization of using super-aligned carbon nanotubes (SACNTs) as etching masks for the fabrication of large area nanoscale metal meshes. This method can easily be extended to different metals on both rigid and flexible substrates. The as-fabricated metal meshes, including the ones made of gold, copper, and aluminum, are suitable for use as transparent conductive layers (TCLs). The metal meshes, which are similar to the SACNT networks in their dimensional features of tens of nanometers, exhibit compatible performance in terms of optical transmittance and sheet resistance. Moreover, because the metal meshes are fabricated as an integrated material, there is no junction resistance between the interconnected metal nanostructures, which markedly lowers their sheet resistance at high temperatures. The fabrication of such an effective etching mask involves a simple

  7. 102({h_bar}/2{pi})k Large Area Atom Interferometers

    SciTech Connect

    Chiow, Sheng-wey; Kovachy, Tim; Chien, Hui-Chun; Kasevich, Mark A.

    2011-09-23

    We demonstrate atom interferometers utilizing a novel beam splitter based on sequential multiphoton Bragg diffractions. With this sequential Bragg large momentum transfer (SB-LMT) beam splitter, we achieve high contrast atom interferometers with momentum splittings of up to 102 photon recoil momenta (102({h_bar}/2{pi})k). To our knowledge, this is the highest momentum splitting achieved in any atom interferometer, advancing the state-of-the-art by an order of magnitude. We also demonstrate strong noise correlation between two simultaneous SB-LMT interferometers, which alleviates the need for ultralow noise lasers and ultrastable inertial environments in some future applications. Our method is intrinsically scalable and can be used to dramatically increase the sensitivity of atom interferometers in a wide range of applications, including inertial sensing, measuring the fine structure constant, and detecting gravitational waves.

  8. A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer.

    PubMed

    Büchner, Christin; Wang, Zhu-Jun; Burson, Kristen M; Willinger, Marc-Georg; Heyde, Markus; Schlögl, Robert; Freund, Hans-Joachim

    2016-08-23

    An atomically smooth silica bilayer is transferred from the growth substrate to a new support via mechanical exfoliation at millimeter scale. The atomic structure and morphology are maintained perfectly throughout the process. A simple heating treatment results in complete removal of the transfer medium. Low-energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and environmental scanning electron microscopy show the success of the transfer steps. Excellent chemical and thermal stability result from the absence of dangling bonds in the film structure. By adding this wide band gap oxide to the toolbox of 2D materials, possibilities for van der Waals heterostructures will be broadened significantly. PMID:27421042

  9. EDITORIAL: Atomic layer deposition Atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Godlewski, Marek

    2012-07-01

    The growth method of atomic layer deposition (ALD) was introduced in Finland by Suntola under the name of atomic layer epitaxy (ALE). The method was originally used for deposition of thin films of sulphides (ZnS, CaS, SrS) activated with manganese or rare-earth ions. Such films were grown for applications in thin-film electroluminescence (TFEL) displays. The ALE mode of growth was also tested in the case of molecular beam epitaxy. Films grown by ALD are commonly polycrystalline or even amorphous. Thus, the name ALE has been replaced by ALD. In the 80s ALD was developed mostly in Finland and neighboring Baltic countries. Deposition of a range of different materials was demonstrated at that time, including II-VI semiconductors (e.g. CdTe, CdS) and III-V (e.g. GaAs, GaN), with possible applications in e.g. photovoltaics. The number of publications on ALD was slowly increasing, approaching about 100 each year. A real boom in interest came with the development of deposition methods of thin films of high-k dielectrics. This research was motivated by a high leakage current in field-effect transistors with SiO2-based gate dielectrics. In 2007 Intel introduced a new generation of integrated circuits (ICs) with thin films of HfO2 used as gate isolating layers. In these and subsequent ICs, films of HfO2 are deposited by the ALD method. This is due to their unique properties. The introduction of ALD to the electronics industry led to a booming interest in the ALD growth method, with the number of publications increasing rapidly to well above 1000 each year. A number of new applications were proposed, as reflected in this special issue of Semiconductor Science and Technology. The included articles cover a wide range of possible applications—in microelectronics, transparent electronics, optoelectronics, photovoltaics and spintronics. Research papers and reviews on the basics of ALD growth are also included, reflecting a growing interest in precursor chemistry and growth

  10. Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

    SciTech Connect

    Shaforost, O.; Wang, K.; Adabi, M.; Guo, Z.; Hanham, S.; Klein, N.; Goniszewski, S.; Gallop, J.; Hao, L.

    2015-01-14

    A method for contact-free determination of the sheet resistance of large-area and arbitrary shaped wafers or sheets coated with graphene and other (semi) conducting ultrathin layers is described, which is based on an open dielectric loaded microwave cavity. The sample under test is exposed to the evanescent resonant field outside the cavity. A comparison with a closed cavity configuration revealed that radiation losses have no significant influence of the experimental results. Moreover, the microwave sheet resistance results show good agreement with the dc conductivity determined by four-probe van der Pauw measurements on a set of CVD samples transferred on quartz. As an example of a practical application, correlations between the sheet resistance and deposition conditions for CVD graphene transferred on quartz wafers are described. Our method has a high potential as measurement standard for contact-free sheet resistance measurement and mapping of large area graphene samples.

  11. Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

    NASA Astrophysics Data System (ADS)

    Shaforost, O.; Wang, K.; Goniszewski, S.; Adabi, M.; Guo, Z.; Hanham, S.; Gallop, J.; Hao, L.; Klein, N.

    2015-01-01

    A method for contact-free determination of the sheet resistance of large-area and arbitrary shaped wafers or sheets coated with graphene and other (semi) conducting ultrathin layers is described, which is based on an open dielectric loaded microwave cavity. The sample under test is exposed to the evanescent resonant field outside the cavity. A comparison with a closed cavity configuration revealed that radiation losses have no significant influence of the experimental results. Moreover, the microwave sheet resistance results show good agreement with the dc conductivity determined by four-probe van der Pauw measurements on a set of CVD samples transferred on quartz. As an example of a practical application, correlations between the sheet resistance and deposition conditions for CVD graphene transferred on quartz wafers are described. Our method has a high potential as measurement standard for contact-free sheet resistance measurement and mapping of large area graphene samples.

  12. Large-area few-layered graphene film determination by multispectral imaging microscopy.

    PubMed

    Wang, Hsiang-Chen; Huang, Shih-Wei; Yang, Jhe-Ming; Wu, Guan-Huang; Hsieh, Ya-Ping; Feng, Shih-Wei; Lee, Min Kai; Kuo, Chie-Tong

    2015-05-21

    A multispectral imaging method for the rapid and accurate identification of few-layered graphene using optical images is proposed. Commonly rapid identification relies on optical interference effects which limits the choice of substrates and light sources. Our method is based on the comparison of spectral characteristics with principle components from a database which is populated by correlation of micro-Raman registration, spectral characteristics, and optical microscopy. Using this approach the thickness and extent of different graphene layers can be distinguished without the contribution of the optical interference effects and allows characterization of graphene on glass substrates. The high achievable resolution, easy implementation and large scale make this approach suitable for the in-line metrology of industrial graphene production. PMID:25921320

  13. Uniform, large-area self-limiting layer synthesis of tungsten diselenide

    NASA Astrophysics Data System (ADS)

    Park, Kyunam; Kim, Youngjun; Song, Jeong-Gyu; Kim, Seok Jin; Lee, Chang Wan; Ryu, Gyeong Hee; Lee, Zonghoon; Park, Jusang; Kim, Hyungjun

    2016-03-01

    A process for the self-limited layer synthesis (SLS) of WSe2 on SiO2 substrates has been developed that provides systematic layer number controllability with micrometer-scale (>90%) and wafer-scale (˜8 cm) uniformity suitable electronic and optoelectronic device applications. This was confirmed by the fabrication and testing of a WSe2 back-gated field effect transistor (FET) using Pd (30 nm) as the contact metal, which exhibited p-type behavior with an on/off ratio of ˜106 and a field-effect hole mobility of 2.2 cm2 V-1 s-1 value, which was higher than has been reported for WSe2-based FETs produced by conventional chemical vapor deposition. On the basis of these results, it is proposed that the SLS method is universally applicable to a range of device applications.

  14. Graphene oxide hole transport layers for large area, high efficiency organic solar cells

    SciTech Connect

    Smith, Chris T. G.; Rhodes, Rhys W.; Beliatis, Michail J.; Imalka Jayawardena, K. D. G.; Rozanski, Lynn J.; Mills, Christopher A.; Silva, S. Ravi P.

    2014-08-18

    Graphene oxide (GO) is becoming increasingly popular for organic electronic applications. We present large active area (0.64 cm{sup 2}), solution processable, poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1, 3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]:[6,6]-Phenyl C{sub 71} butyric acid methyl ester (PCDTBT:PC{sub 70}BM) organic photovoltaic (OPV) solar cells, incorporating GO hole transport layers (HTL). The power conversion efficiency (PCE) of ∼5% is the highest reported for OPV using this architecture. A comparative study of solution-processable devices has been undertaken to benchmark GO OPV performance with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) HTL devices, confirming the viability of GO devices, with comparable PCEs, suitable as high chemical and thermal stability replacements for PEDOT:PSS in OPV.

  15. Large area graphene ion sensitive field effect transistors with tantalum pentoxide sensing layers for pH measurement at the Nernstian limit

    SciTech Connect

    Fakih, Ibrahim Sabri, Shadi; Szkopek, Thomas; Mahvash, Farzaneh; Nannini, Matthieu; Siaj, Mohamed

    2014-08-25

    We have fabricated and characterized large area graphene ion sensitive field effect transistors (ISFETs) with tantalum pentoxide sensing layers and demonstrated pH sensitivities approaching the Nernstian limit. Low temperature atomic layer deposition was used to deposit tantalum pentoxide atop large area graphene ISFETs. The charge neutrality point of graphene, inferred from quantum capacitance or channel conductance, was used to monitor surface potential in the presence of an electrolyte with varying pH. Bare graphene ISFETs exhibit negligible response, while graphene ISFETs with tantalum pentoxide sensing layers show increased sensitivity reaching up to 55 mV/pH over pH 3 through pH 8. Applying the Bergveld model, which accounts for site binding and a Guoy-Chapman-Stern picture of the surface-electrolyte interface, the increased pH sensitivity can be attributed to an increased buffer capacity reaching up to 10{sup 14} sites/cm{sup 2}. ISFET response was found to be stable to better than 0.05 pH units over the course of two weeks.

  16. Cyclododecane as support material for clean and facile transfer of large-area few-layer graphene

    SciTech Connect

    Capasso, A.; Leoni, E.; Dikonimos, T.; Buonocore, F.; Lisi, N.; De Francesco, M.; Lancellotti, L.; Bobeico, E.; Sarto, M. S.; Tamburrano, A.; De Bellis, G.

    2014-09-15

    The transfer of chemical vapor deposited graphene is a crucial process, which can affect the quality of the transferred films and compromise their application in devices. Finding a robust and intrinsically clean material capable of easing the transfer of graphene without interfering with its properties remains a challenge. We here propose the use of an organic compound, cyclododecane, as a transfer material. This material can be easily spin coated on graphene and assist the transfer, leaving no residues and requiring no further removal processes. The effectiveness of this transfer method for few-layer graphene on a large area was evaluated and confirmed by microscopy, Raman spectroscopy, x-ray photoemission spectroscopy, and four-point probe measurements. Schottky-barrier solar cells with few-layer graphene were fabricated on silicon wafers by using the cyclododecane transfer method and outperformed reference cells made by standard methods.

  17. Atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Goodman, Colin H. L.; Pessa, Markus V.

    1986-08-01

    Atomic layer epitaxy (ALE) is not so much a new technique for the preparation of thin films as a novel modification to existing methods of vapor-phase epitaxy, whether physical [e.g., evaporation, at one limit molecular-beam epitaxy (MBE)] or chemical [e.g., chloride epitaxy or metalorganic chemical vapor deposition (MOCVD)]. It is a self-regulatory process which, in its simplest form, produces one complete molecular layer of a compound per operational cycle, with a greater thickness being obtained by repeated cycling. There is no growth rate in ALE as in other crystal growth processes. So far ALE has been applied to rather few materials, but, in principle, it could have a quite general application. It has been used to prepare single-crystal overlayers of CdTe, (Cd,Mn)Te, GaAs and AlAs, a number of polycrystalline films and highly efficient electroluminescent thin-film displays based on ZnS:Mn. It could also offer particular advantages for the preparation of ultrathin films of precisely controlled thickness in the nanometer range and thus may have a special value for growing low-dimensional structures.

  18. Optical properties of large-area ultrathin MoS{sub 2} films: Evolution from a single layer to multilayers

    SciTech Connect

    Park, Jun Woo; So, Hyeon Seob; Kim, Sung; Choi, Suk-Ho; Lee, Hosun; Lee, Jinhwan; Lee, Changgu; Kim, Youngchan

    2014-11-14

    We investigated the optical properties of ultrathin MoS{sub 2} films (number of layers: N = 1, 2, 4, and 12) using Raman spectroscopy, photoluminescence (PL) spectroscopy, and spectroscopic ellipsometry. We estimated the layer thicknesses based on Raman spectra. We characterized the microstructural properties of a single-layer MoS{sub 2} film using atomic force microscopy. We measured the lowest-energy A and B excitons using PL spectroscopy. We measured the ellipsometric angles (Ψ and Δ) of MoS{sub 2} thin films using spectroscopic ellipsometry, and obtained the dielectric functions as the films' thickness changed from a single layer to multi-layers. We determined the films' optical gap energies from the absorption coefficients. Applying the standard critical point model to the second derivative of the dielectric function (d{sup 2}ε(E)/dE{sup 2}), we determined several critical point energies. The d{sup 2}ε(E)/dE{sup 2} spectra showed doublet peaks around 3 eV corresponding to the C and D transitions, as well as doublet peaks around 2 eV corresponding to the A and B transitions. These doublet structures at 3 eV are attributed to the transitions in the Brillouin zone between the Γ and K points.

  19. Freestanding aligned carbon nanotube array grown on a large-area single-layered graphene sheet for efficient dye-sensitized solar cell.

    PubMed

    Qiu, Longbin; Wu, Qiong; Yang, Zhibin; Sun, Xuemei; Zhang, Yuanbo; Peng, Huisheng

    2015-03-01

    A novel carbon nanomaterial with aligned carbon nanotubes (CNTs) chemically bonded to a single-layered, large area graphene sheet is designed and fabricated, showing remarkable electronic and electrocatalytic properties. When the carbon nanomaterial is used as a counter electrode, the resulting dye-sensitized solar cell exhibits ≈11% enhancement of energy conversion efficiency than aligned CNT array. PMID:24889384

  20. Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

    NASA Astrophysics Data System (ADS)

    Mok, K. R. C.; Qi, L.; Vlooswijk, A. H. G.; Nanver, L. K.

    2015-09-01

    In this work, a double-layer Al metallization scheme for large-area photodiodes is presented. This scheme combines a self-alignment of two separate layers of sputtered Al with an anodic Al2O3 as the intermediate insulating layer. One initial patterning step, that could be performed litho-less by for example laser ablation, was needed to define and etch cavities. The cavities provided two Si levels, each of which was contacted by one of the metal layers. Measurement results of test structures showed the effectiveness of this metallization scheme. Despite being partially anodized, the underlying Al layer remained a good conducting layer, with normal low-ohmic behavior. The anodized Al2O3 layer itself acted as a good insulating layer and the two metal layers were not shorted. Furthermore, the characteristics of diodes formed in the textured cavity were as ideal as the planar counterparts. The large two-dimensional coverage of both the anode and cathode by separate metal layers is a promising configuration for low series resistance. Moreover, all steps involved are available on standard integrated circuit (IC) processing equipment, and Al is an abundant cheap metal, making this a very low-cost method of fabricating contacts to large-area devices.

  1. Planar monolithic porous polymer layers functionalized with gold nanoparticles as large-area substrates for sensitive surface-enhanced Raman scattering sensing of bacteria.

    PubMed

    Cao, Yao; Lv, Mingyang; Xu, Haijun; Svec, Frantisek; Tan, Tianwei; Lv, Yongqin

    2015-10-01

    For the first time, large-area surface-enhanced Raman scattering sensing active substrates using porous polymer monolithic layers have been successfully prepared. Our approach includes a simple photoinitiated polymerization process using glycidyl methacrylate and ethylene dimethacrylate in a glass mold, followed by a chemical reaction of the epoxy functionalities leading to thiols, and the attachment of preformed gold nanoparticles. We demonstrated that this very simple process produced uniform and reproducible large area surfaces that significantly enhance sensitivity of Raman spectroscopy. Experiments were also carried out that confirmed preferential adsorption of living bacteria Escherichia coli from a very dilute solution on the surface of the monolithic layer, and immediate detection of the captured microorganisms using the SERS spectrum. PMID:26481994

  2. Discrete Atomic Layers at the Molecular Level

    NASA Astrophysics Data System (ADS)

    Yorimitsu, Hideki; Bhanuchandra, M.

    2015-12-01

    In this review, we deal with the syntheses of large discrete atomic layers at the molecular level. Spectroscopic measurements as well as X-ray crystallographic analyses lead to unambiguous characterizations of these layers. The molecular atomic layers can be considered to be parts of graphenes and related atomic layers, thereby helping to understand such indefinitely huge atomic layers or serving as seeds for the controlled synthesis of nanocarbons.

  3. Studies of Large-Area Inversion-Layer Metal-Insulator-Semiconductor (IL/MIS) Solar Cells and Arrays

    NASA Technical Reports Server (NTRS)

    Ho, Fat Duen

    1996-01-01

    Many inversion-layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. There are around eighteen 1 cm(exp 2) IL/MIS solar cells which have efficiencies greater than 7%. There are only about three 19 cm(exp 2) IL/MIS cells which have efficiencies greater than 4%. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved. A lot of effort and progress have been made in this area. A comprehensive model for MIS contacts under dark conditions has been developed that covers a wide range of parameters. It has been applied to MIS solar cells. One of the main advantages of these models is the prediction of the range of the thin oxide thickness versus the maximum efficiencies of the MIS solar cells. This is particularly important when the thickness is increased to 25 A. This study is very useful for our investigation of the IL/MIS solar cells. The two-dimensional numerical model for the IL/MIS solar cells has been tried to develop and the results are presented in this report.

  4. Characterization of borosilicate microchannel plates functionalized by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ertley, C.; Siegmund, O. H. W.; Schwarz, J.; Mane, A. U.; Minot, M. J.; O'Mahony, A.; Craven, C. A.; Popecki, M.

    2015-08-01

    Borosilicate microcapillary arrays have been functionalized by Atomic Layer Deposition (ALD) of resistive and secondary emissive layers to produce robust microchannel plates (MCPs) with improved performance characteristics over traditional MCPs. These techniques produce MCP's with enhanced stability and lifetime, low background rates, and low levels of adsorbed gas. Using ALD to functionalize the substrate decouples the two and provides the opportunity to explore many new materials. The borosilicate substrates have many advantages over traditional lead glass MCPs, including the ability to be fabricated in large areas (currently at 400 cm2).

  5. Mass-transport-controlled, large-area, uniform deposition of carbon nanofibers and their application in gas diffusion layers of fuel cells.

    PubMed

    Tang, Xian; Xie, Zhiyong; Huang, Qizhong; Chen, Guofen; Hou, Ming; Yi, Baolian

    2015-05-01

    The effect of mass transport on the growth characteristics of large-area vapor-grown carbon nanofibers (CNFs) was investigated by adjusting the substrate deposition angle (α). The catalyst precursor solution was coated onto one side of a 2D porous carbon paper substrate via a decal printing method. The results showed that the CNFs were grown on only one side of the substrate and α was found to significantly affect the growth uniformity. At α = 0°, the growth thickness, the density, the microstructure and the yield of the CNF film were uniform across the substrate surface, whereas the growth uniformity decreased with increasing α, suggesting that the large-area CNF deposition processes were mass-transport-controlled. Computational fluid dynamics simulations of the gas diffusion processes revealed the homogeneous distributions of the carbon-source-gas concentration, pressure, and velocity near the substrate surface at α = 0°, which were the important factors in achieving the mass-transport-limited uniform CNF growth. The homogeneity of the field distributions decreased with increasing α, in accordance with the variation in the growth uniformity with α. When used as a micro-porous layer, the uniform CNF film enabled higher proton exchange membrane fuel cell performance in comparison with commercial carbon black by virtue of its improved electronic and mass-transport properties confirmed by the electrochemical impedance spectroscopy results. PMID:25865711

  6. Nanoelectronic circuits based on two-dimensional atomic layer crystals

    NASA Astrophysics Data System (ADS)

    Lee, Seunghyun; Zhong, Zhaohui

    2014-10-01

    Since the discovery of graphene and related forms of two-dimensional (2D) atomic layer crystals, numerous studies have reported on the fundamental material aspects, such as the synthesis, the physical properties, and the electrical properties on the transistor level. With the advancement in large-area synthesis methods, system level integration to exploit the unique applications of these materials is close at hand. The main purpose of this review is to focus on the current progress and the prospect of circuits and systems based on 2D material that go beyond the single-transistor level studies. Both analog and digital circuits based on graphene and related 2D atomic layer crystals will be discussed.

  7. Large-area, free-standing, two-dimensional supramolecular polymer single-layer sheets for highly efficient electrocatalytic hydrogen evolution.

    PubMed

    Dong, Renhao; Pfeffermann, Martin; Liang, Haiwei; Zheng, Zhikun; Zhu, Xiang; Zhang, Jian; Feng, Xinliang

    2015-10-01

    The rational construction of covalent or noncovalent organic two-dimensional nanosheets is a fascinating target because of their promising applications in electronics, membrane technology, catalysis, sensing, and energy technologies. Herein, a large-area (square millimeters) and free-standing 2D supramolecular polymer (2DSP) single-layer sheet (0.7-0.9 nm in thickness), comprising triphenylene-fused nickel bis(dithiolene) complexes has been readily prepared by using the Langmuir-Blodgett method. Such 2DSPs exhibit excellent electrocatalytic activities for hydrogen generation from water with a Tafel slope of 80.5 mV decade(-1) and an overpotential of 333 mV at 10 mA cm(-2) , which are superior to that of recently reported carbon nanotube supported molecular catalysts and heteroatom-doped graphene catalysts. This work is promising for the development of novel free-standing organic 2D materials for energy technologies. PMID:26306686

  8. Film-coupled nanoparticles by atomic layer deposition: Comparison with organic spacing layers

    SciTech Connect

    Ciracì, Cristian Mock, Jack J.; McGuire, Felicia; Liu, Xiaojun; Smith, David R.; Chen, Xiaoshu; Oh, Sang-Hyun

    2014-01-13

    Film-coupled nanoparticle systems have proven a reliable platform for exploring the field enhancement associated with sub-nanometer sized gaps between plasmonic nanostructures. In this Letter, we present a side-by-side comparison of the spectral properties of film-coupled plasmon-resonant, gold nanoparticles, with dielectric spacer layers fabricated either using atomic layer deposition or using organic layers (polyelectrolytes or self-assembled monolayers of molecules). In either case, large area, uniform spacer layers with sub-nanometer thicknesses can be accurately deposited, allowing extreme coupling regimes to be probed. The observed spectral shifts of the nanoparticles as a function of spacer layer thickness are similar for the organic and inorganic films and are consistent with numerical calculations taking into account the nonlocal response of the metal.

  9. Atomic layer-by-layer epitaxy of cuprate superconductors

    SciTech Connect

    Bozovic, I.; Eckstein, J.N.; Virshup, G.F.

    1994-03-01

    A technique for atomic layer-by-layer epitaxy of cuprate superconductors and other complex oxides has been developed at Varian. The samples are engineered by stacking molecular layers of different compounds to assemble multilayers and superlattices, by adding or omitting atomic monolayers to create novel compounds, and by doping within specified atomic monolayers. Apart form manufacturing trilayer Josephson junctions with I{sub c}R{sub n}>5 mV, this technique enables one to address fundamental issues such as the dimensionality of HTSC state, existence of long-range proximity effects, occurrence of resonant tunneling etc., as well as to synthesize novel metastable HTSC compounds. 4 refs., 2 figs.

  10. Development of the large-area silicon PIN diode with 2 millimeter-thick depletion layer for hard x-ray detector (HXD) on board ASTRO-E

    NASA Astrophysics Data System (ADS)

    Sugizaki, Mutsumi; Kubo, S.; Murakami, Toshio; Ota, Naomi; Ozawa, Hideki; Takahashi, Tadayuki; Kaneda, Hidehiro; Iyomoto, Naoko; Kamae, Tuneyoshi; Kokubun, Motohide; Kubota, Aya; Makishima, Kazuo; Tamura, Takayuki; Tashiro, Makoto

    1997-07-01

    ASTRO-E is the next Japanese x-ray satellite to be launched in the year 2000. It carries three high-energy astrophysical experiments, including the hard x-ray detector (HXD) which is unique in covering the wide energy band from 10 keV to 700 keV with an extremely low background. The HXD is a compound-eye detector, employing 16 GSO/BGO well-type phoswich scintillation counters together with 64 silicon PIN detectors. The scintillation counters cover an energy range of 40 - 700 keV, while the PIN diodes fill the intermediate energy range from 10 keV to 70 keV with an energy resolution about 3 keV. In this paper, we report on the developments of the large area, thick silicon PIN diodes. In order to achieve a high quantum efficiency up to 70 keV with a high energy resolution, we utilize a double stack of silicon PIN diodes, each 20 by 20 mm(superscript 2) in size and 2 mm thick. Signals from the two diodes are summed into a single output. Four of these stacks (or eight diodes) are placed inside the deep BGO active-shield well of a phoswich counter, to achieve an extremely low background environment. Thus, the HXD utilizes 64 stacked silicon PIN detectors, achieving a total geometrical collecting area of 256 cm(superscript 2). We have developed the 2 mm thick silicon PIN diodes which have low leakage current, a low capacitance, and a high breakdown voltage to meet the requirements of our goal. Through various trials in fabricating PIN diodes with different structures, we have found optimal design parameters, such as mask design of the surface p(superscript +) layer and the implantation process.

  11. Large area LED package

    NASA Astrophysics Data System (ADS)

    Goullon, L.; Jordan, R.; Braun, T.; Bauer, J.; Becker, F.; Hutter, M.; Schneider-Ramelow, M.; Lang, K.-D.

    2015-03-01

    Solid state lighting using LED-dies is a rapidly growing market. LED-dies with the needed increasing luminous flux per chip area produce a lot of heat. Therefore an appropriate thermal management is required for general lighting with LEDdies. One way to avoid overheating and shorter lifetime is the use of many small LED-dies on a large area heat sink (down to 70 μm edge length), so that heat can spread into a large area while at the same time light also appears on a larger area. The handling with such small LED-dies is very difficult because they are too small to be picked with common equipment. Therefore a new concept called collective transfer bonding using a temporary carrier chip was developed. A further benefit of this new technology is the high precision assembly as well as the plane parallel assembly of the LED-dies which is necessary for wire bonding. It has been shown that hundred functional LED-dies were transferred and soldered at the same time. After the assembly a cost effective established PCB-technology was applied to produce a large-area light source consisting of many small LED-dies and electrically connected on a PCB-substrate. The top contacts of the LED-dies were realized by laminating an adhesive copper sheet followed by LDI structuring as known from PCB-via-technology. This assembly can be completed by adding converting and light forming optical elements. In summary two technologies based on standard SMD and PCB technology have been developed for panel level LED packaging up to 610x 457 mm2 area size.

  12. Photoelectron spectroscopic imaging and device applications of large-area patternable single-layer MoS2 synthesized by chemical vapor deposition.

    PubMed

    Park, Woanseo; Baik, Jaeyoon; Kim, Tae-Young; Cho, Kyungjune; Hong, Woong-Ki; Shin, Hyun-Joon; Lee, Takhee

    2014-05-27

    Molybdenum disulfide (MoS2) films, which are only a single atomic layer thick, have been synthesized by chemical vapor deposition (CVD) and have gained significant attention due to their band-gap semiconducting properties. However, in order for them to be useful for the fabrication of practical devices, patterning processes that can be used to form specific MoS2 structures must be integrated with the existing synthetic approaches. Here, we report a method for the synthesis of centimeter-scale, high-quality single-layer MoS2 that can be directly patterned during CVD, so that postpatterning processes can be avoided and device fabrication can be streamlined. Utilizing X-ray photoelectron spectroscopic imaging, we characterize the chemical states of these CVD-synthesized single-layer MoS2 films and demonstrate that the triangular-shaped MoS2 are single-crystalline single-domain monolayers. We also demonstrate the use of these high-quality and directly patterned MoS2 films in electronic device applications by fabricating and characterizing field effect transistors. PMID:24730654

  13. Advanced atom chips with two metal layers.

    SciTech Connect

    Stevens, James E.; Blain, Matthew Glenn; Benito, Francisco M.; Biedermann, Grant

    2010-12-01

    A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.

  14. The Large Area Telescope

    SciTech Connect

    Michelson, Peter F.; /KIPAC, Menlo Park /Stanford U., HEPL

    2007-11-13

    The Large Area Telescope (LAT), one of two instruments on the Gamma-ray Large Area Space Telescope (GLAST) mission, is an imaging, wide field-of-view, high-energy pair-conversion telescope, covering the energy range from {approx}20 MeV to more than 300 GeV. The LAT is being built by an international collaboration with contributions from space agencies, high-energy particle physics institutes, and universities in France, Italy, Japan, Sweden, and the United States. The scientific objectives the LAT will address include resolving the high-energy gamma-ray sky and determining the nature of the unidentified gamma-ray sources and the origin of the apparently isotropic diffuse emission observed by EGRET; understanding the mechanisms of particle acceleration in celestial sources, including active galactic nuclei, pulsars, and supernovae remnants; studying the high-energy behavior of gamma-ray bursts and transients; using high-energy gamma-rays to probe the early universe to z {ge} 6; and probing the nature of dark matter. The components of the LAT include a precision silicon-strip detector tracker and a CsI(Tl) calorimeter, a segmented anticoincidence shield that covers the tracker array, and a programmable trigger and data acquisition system. The calorimeter's depth and segmentation enable the high-energy reach of the LAT and contribute significantly to background rejection. The aspect ratio of the tracker (height/width) is 0.4, allowing a large field-of-view and ensuring that nearly all pair-conversion showers initiated in the tracker will pass into the calorimeter for energy measurement. This paper includes a description of each of these LAT subsystems as well as a summary of the overall performance of the telescope.

  15. Large area Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Rea, S. N.; Gleim, P. S.

    1977-01-01

    The overall cost effectiveness of the Czochralski process for producing large-area silicon was determined. The feasibility of growing several 12 cm diameter crystals sequentially at 12 cm/h during a furnace run and the subsequent slicing of the ingot using a multiblade slurry saw were investigated. The goal of the wafering process was a slice thickness of 0.25 mm with minimal kerf. A slice + kerf of 0.56 mm was achieved on 12 cm crystal using both 400 grit B4C and SiC abrasive slurries. Crystal growth experiments were performed at 12 cm diameter in a commercially available puller with both 10 and 12 kg melts. Several modifications to the puller hoz zone were required to achieve stable crystal growth over the entire crystal length and to prevent crystallinity loss a few centimeters down the crystal. The maximum practical growth rate for 12 cm crystal in this puller design was 10 cm/h, with 12 to 14 cm/h being the absolute maximum range at which melt freeze occurred.

  16. Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation.

    PubMed

    Seo, Soonjoo; Lee, Hyun Uk; Lee, Soon Chang; Kim, Yooseok; Kim, Hyeran; Bang, Junhyeok; Won, Jonghan; Kim, Youngjun; Park, Byoungnam; Lee, Jouhahn

    2016-01-01

    Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors. PMID:27026070

  17. Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation

    NASA Astrophysics Data System (ADS)

    Seo, Soonjoo; Lee, Hyun Uk; Lee, Soon Chang; Kim, Yooseok; Kim, Hyeran; Bang, Junhyeok; Won, Jonghan; Kim, Youngjun; Park, Byoungnam; Lee, Jouhahn

    2016-03-01

    Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors.

  18. Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation

    PubMed Central

    Seo, Soonjoo; Lee, Hyun Uk; Lee, Soon Chang; Kim, Yooseok; Kim, Hyeran; Bang, Junhyeok; Won, Jonghan; Kim, Youngjun; Park, Byoungnam; Lee, Jouhahn

    2016-01-01

    Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors. PMID:27026070

  19. Layered Atom Arrangements in Complex Materials

    SciTech Connect

    K.E. Sikafus; R.W.Grimes; S.M.Corish; A.R. Cleave; M.Tang; C.R.Stanek; B.P. Uberuaga; J.A.Valdez

    2005-04-15

    In this report, we develop an atom layer stacking model to describe systematically the crystal structures of complex materials. To illustrate the concepts, we consider a sequence of oxide compounds in which the metal cations progress in oxidation state from monovalent (M{sup 1+}) to tetravalent (M{sup 4+}). We use concepts relating to geometric subdivisions of a triangular atom net to describe the layered atom patterns in these compounds (concepts originally proposed by Shuichi Iida). We demonstrate that as a function of increasing oxidation state (from M{sup 1+} to M{sup 4+}), the layer stacking motifs used to generate each successive structure (specifically, motifs along a 3 symmetry axis), progress through the following sequence: MMO, MO, M{sub r}O, MO{sub r/s}O{sub u/v}, MOO (where M and O represent fully dense triangular atom nets and r/s and u/v are fractions used to describe partially filled triangular atom nets). We also develop complete crystallographic descriptions for the compounds in our oxidation sequence using trigonal space group R{bar 3}.

  20. Nano-soldering to single atomic layer

    DOEpatents

    Girit, Caglar O.; Zettl, Alexander K.

    2011-10-11

    A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

  1. Atomic layer deposition of nanoporous biomaterials.

    SciTech Connect

    Narayan, R. J.; Adiga, S. P.; Pellin, M. J.; Curtiss, L. A.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N. A.; Brigmon, R. L.; Elam, J. W.; Univ. of North Carolina; North Carolina State Univ.; Eastman Kodak Co.; North Dakota State Univ.; SRL

    2010-03-01

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials. Nanoporous alumina, also known as anodic aluminum oxide (AAO), is a nanomaterial that exhibits several unusual properties, including high pore densities, straight pores, small pore sizes, and uniform pore sizes. In 1953, Keller et al. showed that anodizing aluminum in acid electrolytes results in a thick layer of nearly cylindrical pores, which are arranged in a close-packed hexagonal cell structure. More recently, Matsuda & Fukuda demonstrated preparation of highly ordered platinum and gold nanohole arrays using a replication process. In this study, a negative structure of nanoporous alumina was initially fabricated and a positive structure of a nanoporous metal was subsequently fabricated. Over the past fifteen years, nanoporous alumina membranes have been used as templates for growth of a variety of nanostructured materials, including nanotubes, nanowires, nanorods, and nanoporous membranes.

  2. Spotting 2D atomic layers on aluminum nitride thin films.

    PubMed

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers. PMID:26422387

  3. Spotting 2D atomic layers on aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Raghavan, Srinivasan

    2015-10-01

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  4. Synthesis, characterization, electronic and gas-sensing properties towards H2 and CO of transparent, large-area, low-layer graphene.

    PubMed

    Kayhan, Emine; Prasad, Ravi Mohan; Gurlo, Alexander; Yilmazoglu, Oktay; Engstler, Jörg; Ionescu, Emanuel; Yoon, Songhak; Weidenkaff, Anke; Schneider, Jörg J

    2012-11-19

    Low-layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni-catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni-catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (R(sheet)) of approximately 1435 Ω per □, a contact resistance (R(c)) of about 127 Ω, and a specific contact resistance (R(sc)) of approximately 2.8×10(-4)  Ω cm(2) for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (I(ds)-V(ds)) plot clearly indicates a p-conducting characteristic of the synthesized graphene. Gas-sensor measurements revealed a high sensor activity of the low-layer graphene material towards H(2) and CO. At 300 °C, a sensor response of approximately 29 towards low H(2) concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported. PMID:23032996

  5. Enhanced Photocathodes for Astrophysics using Atomic Layer Deposition Techniques Deposition Techniques

    NASA Astrophysics Data System (ADS)

    Siegmund, Oswald

    The objective of this program is to exploit the recent availability of atomic layer deposition techniques to provide a new generation of high performance photocathodes. We intend to work on the enhancement of photocathodes by atomic layer deposition, and on atomic layer deposited substrate structures, and assess their performance (gain, lifetime, stability, image fidelity) in microchannel plate based detectors. This would enable detection efficiency and bandpass improvements for microchannel plate based spaceflight detectors for imaging and spectroscopic instruments in small and large formats. Applications include the detection of soft X-ray, and UV through NUV. Recent work has achieved considerable success in development of borosilicate substrate microchannel plates functionalized by atomic layer deposited resistive and photoemissive materials. These could provide stable, compatible, substrates for high efficiency photocathodes, although very limited work has been done to date on this aspect. This development addresses detector technologies for SALSO, and impending proposals for a number of other NASA sub-orbital and satellite instruments. Results with borosilicate substrate microchannel plates functionalized by atomic layer deposited surface layers has been impressive, providing economical devices with long term stable gain and low background in formats up to 20 cm. Atomic layer deposition provides a surface layer that is smooth, clean, and chemically compatible with photocathode materials, and withstands high temperatures. The substrates can also be made with larger open area ratios, and the atomic layer deposition nanofabrication processes provides high secondary emission coefficients that will enhance photocathode efficiencies. Photocathodes (GaN, etc) deposited by MOCVD or MBE processes may also be deposited using atomic layer deposition, with potential advantages in layer structuring and selective area coverage and penetration over large areas.

  6. Toward large-area targets for “TRAKULA”

    NASA Astrophysics Data System (ADS)

    Vascon, A.; Düllmann, Ch. E.; Eberhardt, K.; Kindler, B.; Lommel, B.; Runke, J.

    2011-11-01

    TRAKULA ( Transmutationsrelevante kernphysikalische Untersuchungen langlebiger Aktinide, i.e., nuclear physical investigations of long-lived actinides with relevance to transmutation) is a joint research project of the German Federal Ministry of Science and Education (BMBF) on nuclear physics investigations with modern scientific, technological and numerical methods. Experiments concerning the transmutation of radioactive waste are a central topic of the project. For this, large-area samples (≥40 cm 2) of 235,238U and 239,242Pu compounds are required for the calibration of fission chambers and for fission yield measurements. Another topic within the project requires large-area targets for precise measurements of the half-life, t1/2, of very long-lived α-particle emitters like 144Nd ( t1/2≈2×10 15 y). Here, we report on electrodeposition tests with Gd and Nd (used as chemical homologs of the actinides), which were performed to find optimal deposition conditions for small-area targets that should be applicable to future large-area targets. The layers were produced by molecular plating. A new stirring technique, ultrasonic stirring, was adopted and found to be suitable for producing large-area targets. Moreover, two different current densities (namely 0.7 and 1.4 mA/cm 2) were studied and found appropriate for target preparation. Characterization of the layers with different analytical techniques played a major role in these studies to gain a deeper understanding of the deposition process itself: neutron activation analysis and γ-spectroscopy were used for yield measurements, radiographic imaging for homogeneity studies, scanning electron microscopy for morphology studies, and atomic force microscopy for roughness studies. According to the obtained results, a new electrochemical cell for the production of large-area targets was designed.

  7. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method.

    PubMed

    Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-01-01

    We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm(2)/Vs and current on/off ratio on the order of ~10(4) were obtained for bilayer MoS2. The mobility increased up to ~173-181 cm(2)/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film. PMID:27492282

  8. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

    PubMed Central

    Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-01-01

    We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film. PMID:27492282

  9. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

    NASA Astrophysics Data System (ADS)

    Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-08-01

    We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film.

  10. Ruthenium / aerogel nanocomposits via Atomic Layer Deposition

    SciTech Connect

    Biener, J; Baumann, T F; Wang, Y; Nelson, E J; Kucheyev, S O; Hamza, A V; Kemell, M; Ritala, M; Leskela, M

    2006-08-28

    We present a general approach to prepare metal/aerogel nanocomposites via template directed atomic layer deposition (ALD). In particular, we used a Ru ALD process consisting of alternating exposures to bis(cyclopentadienyl)ruthenium (RuCp{sub 2}) and air at 350 C to deposit metallic Ru nanoparticles on the internal surfaces of carbon and silica aerogels. The process does not affect the morphology of the aerogel template and offers excellent control over metal loading by simply adjusting the number of ALD cycles. We also discuss the limitations of our ALD approach, and suggest ways to overcome these.

  11. Atomic Layer Deposition for SRF Cavities

    SciTech Connect

    Norem, J; Pellin, M J; Antoine, C Z; Ciovati, G; Kneisel, P; Reece, C E; Rimmer, R A; Cooley, L; Gurevich, A V; Ha, Y; Proslier, Th; Zasadzinski, J

    2009-05-01

    We have begun using Atomic Layer Deposition (ALD) to synthesize a variety of surface coatings on coupons and cavities as part of an effort to produce rf structures with significantly better performance and yield than those obtained from bulk niobium, The ALD process offers the possibility of conformally coating complex cavity shapes with precise layered structures with tightly constrained morphology and chemical properties. Our program looks both at the metallurgy and superconducting properties of these coatings, and also their performance in working structures. Initial results include: 1) evidence from point contact tunneling showing magnetic oxides can be a significant limitation to high gradient operation, 2) experimental results showing the production sharp niobium/oxide interfaces from a high temperature bake of ALD coated Al2O3 on niobium surfaces, 3) results from ALD coated structures.

  12. Atomic Layer Deposition for SRF Cavities

    SciTech Connect

    Proslier, Th.; Ha, Y.; Zasadzinski, J.; Ciovati, G.; Kneissel, P.; Reece, C.; Rimmer, R.; Gurevich, A.; Cooley, L.; Wu, G.; Pellin, M.; /Argonne

    2009-05-01

    We have begun using Atomic Layer Deposition (ALD) to synthesize a variety of surface coatings on coupons and cavities as part of an effort to produce rf structures with significantly better performance and yield than those obtained from bulk niobium, The ALD process offers the possibility of conformally coating complex cavity shapes with precise layered structures with tightly constrained morphology and chemical properties. Our program looks both at the metallurgy and superconducting properties of these coatings, and also their performance in working structures. Initial results include: (1) results from ALD coated cavities and coupons, (2) new evidence from point contact tunneling (PCT) showing magnetic oxides can be a significant limitation to high gradient operation, (3) a study of high pressure rinsing damage on niobium samples.

  13. Fermi's Large Area Telescope (LAT)

    NASA Video Gallery

    Fermi’s Large Area Telescope (LAT) is the spacecraft’s main scientificinstrument. This animation shows a gamma ray (purple) entering the LAT,where it is converted into an electron (red) and a...

  14. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

    NASA Astrophysics Data System (ADS)

    Nourbakhsh, Amirhasan; Adelmann, Christoph; Song, Yi; Lee, Chang Seung; Asselberghs, Inge; Huyghebaert, Cedric; Brizzi, Simone; Tallarida, Massimo; Schmeißer, Dieter; van Elshocht, Sven; Heyns, Marc; Kong, Jing; Palacios, Tomás; de Gendt, Stefan

    2015-06-01

    Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the

  15. Large Area Synthesis of 2D Materials

    NASA Astrophysics Data System (ADS)

    Vogel, Eric

    Transition metal dichalcogenides (TMDs) have generated significant interest for numerous applications including sensors, flexible electronics, heterostructures and optoelectronics due to their interesting, thickness-dependent properties. Despite recent progress, the synthesis of high-quality and highly uniform TMDs on a large scale is still a challenge. In this talk, synthesis routes for WSe2 and MoS2 that achieve monolayer thickness uniformity across large area substrates with electrical properties equivalent to geological crystals will be described. Controlled doping of 2D semiconductors is also critically required. However, methods established for conventional semiconductors, such as ion implantation, are not easily applicable to 2D materials because of their atomically thin structure. Redox-active molecular dopants will be demonstrated which provide large changes in carrier density and workfunction through the choice of dopant, treatment time, and the solution concentration. Finally, several applications of these large-area, uniform 2D materials will be described including heterostructures, biosensors and strain sensors.

  16. Progress on large area GEMs

    NASA Astrophysics Data System (ADS)

    Villa, Marco; Duarte Pinto, Serge; Alfonsi, Matteo; Brock, Ian; Croci, Gabriele; David, Eric; de Oliveira, Rui; Ropelewski, Leszek; Taureg, Hans; van Stenis, Miranda

    2011-02-01

    The Gas Electron Multiplier (GEM) manufacturing technique has recently evolved to allow the production of large area GEMs. A novel approach based on single mask photolithography eliminates the mask alignment issue, which limits the dimensions in the traditional double mask process. Moreover, a splicing technique overcomes the limited width of the raw material. Stretching and handling issues in large area GEMs have also been addressed. Using the new improvements it was possible to build a prototype triple-GEM detector of ˜2000 cm2 active area, aimed at an application for the TOTEM T1 upgrade. Further refinements of the single mask technique allow great control over the shape of the GEM holes and the size of the rims, which can be tuned as needed. In this framework, simulation studies can help to understand the GEM behavior depending on the hole shape.

  17. Electronic Properties of Incommensurate Atomic Layers

    NASA Astrophysics Data System (ADS)

    Koshino, Mikito; Moon, Pilkyung

    2015-12-01

    We present a brief theoretical overview of electronic properties of incommensurate multilayer systems, i.e., a pair of two-dimensional atomic layers stacked in an arbitrary orientation. We introduce the general theoretical scheme to describe the interlayer interaction between incommensurate crystal structures, and apply the formula to two specific examples, the twisted bilayer graphene and graphene-hBN composite bilayer. In each case, we calculate the electronic band structure and demonstrate that the low-energy electronic properties are significantly modified by the interlayer interaction, particularly when the two lattice structures are close to each other. We also study the energy spectrum and the quantum Hall effect in magnetic fields, where we see that the spectral structure exhibits a fractal nature, as known as the Hofstadter butterfly. We argue about the optical absorption properties of the twisted bilayer graphene and show that the interlayer interaction gives rise to the characteristic spectroscopic features in zero magnetic field and also in strong magnetic field.

  18. Atomic layer deposition of metallic cobalt

    NASA Astrophysics Data System (ADS)

    Kwon, Jinhee; Saly, Mark; Kanjolia, Ravi; Chabal, Yves; University of Texas at Dallas Collaboration; SAFC Collaboration

    2011-03-01

    Metallic cobalt has rich catalytic, electronic and magnetic properties, which makes it critical to have a better control of Co thin film deposition for various applications. This work focuses on the atomic layer deposition (ALD) of cobalt using (tertiarybutylallyl)cobalttricarbonyl (t BuAllyl)Co(CO)3 and dimethylhydrazine (DMHy) on H-terminated Si to uncover the growth mechanisms. The first pulse of (t BuAllyl)Co(CO)3 reacts with surface H--Si bonds completely, forming one monolayer of metallic silicide. In situ infrared absorption spectra show that further deposition of Co is made possible only after linear carbonyl groups which remain after the first (t BuAllyl)Co(CO)3 pulse as the surface ligand are removed by subsequent ALD cycles. Further ALD cycles give rise to metallic Co growth through ligand exchange after a nucleation period of 8--10 cycles. The derived growth rate of cobalt is 0.6 +/- 0.1 Å/cycle. The resultant Co film shows low concentration of carbon and nitrogen impurities in the bulk according to X-ray photoemission spectroscopy.

  19. Tailoring nanoporous materials by atomic layer deposition.

    PubMed

    Detavernier, Christophe; Dendooven, Jolien; Sree, Sreeprasanth Pulinthanathu; Ludwig, Karl F; Martens, Johan A

    2011-11-01

    Atomic layer deposition (ALD) is a cyclic process which relies on sequential self-terminating reactions between gas phase precursor molecules and a solid surface. The self-limiting nature of the chemical reactions ensures precise film thickness control and excellent step coverage, even on 3D structures with large aspect ratios. At present, ALD is mainly used in the microelectronics industry, e.g. for growing gate oxides. The excellent conformality that can be achieved with ALD also renders it a promising candidate for coating porous structures, e.g. for functionalization of large surface area substrates for catalysis, fuel cells, batteries, supercapacitors, filtration devices, sensors, membranes etc. This tutorial review focuses on the application of ALD for catalyst design. Examples are discussed where ALD of TiO(2) is used for tailoring the interior surface of nanoporous films with pore sizes of 4-6 nm, resulting in photocatalytic activity. In still narrower pores, the ability to deposit chemical elements can be exploited to generate catalytic sites. In zeolites, ALD of aluminium species enables the generation of acid catalytic activity. PMID:21695333

  20. Large Area Printing of Organic Transistors

    NASA Astrophysics Data System (ADS)

    Blanchet, Graciela B.; Rogers, J. A.; Lefenfeld, M.; Fincher, C. R.; Loo, Jueh-Lin

    2003-03-01

    Organic electronic systems offer the advantage of lightweight, mechanical flexibility and large area coverage at potentially lower manufacturing cost. Although the production of functioning plastic transistors using approaches such as ink jet, screen printing and stamping, has been described in the literature, no one-transistor layer has yet been fabricated using a technique appropriate for their commercial ization. The solution processability of many organics may ultimately allow for the printing of electronic devices in a printing press at high speeds and in a reel to reel configuration. However, designing chemically compatible solutions to be printed sequentially represents a significant technical barrier to achieving all-printed plastic electronic systems. The work presented here represents a step change in the fabrication of organic electronic devices. We introduce thermal transfer, a non-lithographic technique that enables printing multi-layer electronics devices via a dry (i.e. solvent-less) additive process. This high-speed method is capable of patterning a range of organic materials over large areas ( 1 m2 ) with micron dimensions and excellent electrical performance. The 0.5 m2 transistor array backplane printed via thermal transfer represent the most advanced demonstration of a novel printing technology applied to the fabrication of large area integrated electronic devices. Dry transfer printing may provide a practical route to realizing the benefits of plastic materials for electronics.

  1. Flat metallic surface gratings with sub-10 nm gaps controlled by atomic-layer deposition.

    PubMed

    Chen, Borui; Ji, Dengxin; Cheney, Alec; Zhang, Nan; Song, Haomin; Zeng, Xie; Thomay, Tim; Gan, Qiaoqiang; Cartwright, Alexander

    2016-09-16

    Atomic layer lithography is a recently reported new technology to fabricate deep-subwavelength features down to 1-2 nm, based on combinations of electron beam lithography (EBL) and atomic layer deposition (ALD). However, the patterning area is relatively small as limited by EBL, and the fabrication yield is not very high due to technical challenges. Here we report an improved procedure to fabricate flat metallic surfaces with sub-10 nm features based on ALD processes. To demonstrate the scalability of the new manufacturing method, we combine the ALD process with large area optical interference patterning, which is particularly promising for the development of practical applications for nanoelectronics and nanophotonics with extremely strong confinement of electromagnetic fields. PMID:27505713

  2. Flat metallic surface gratings with sub-10 nm gaps controlled by atomic-layer deposition

    NASA Astrophysics Data System (ADS)

    Chen, Borui; Ji, Dengxin; Cheney, Alec; Zhang, Nan; Song, Haomin; Zeng, Xie; Thomay, Tim; Gan, Qiaoqiang; Cartwright, Alexander

    2016-09-01

    Atomic layer lithography is a recently reported new technology to fabricate deep-subwavelength features down to 1–2 nm, based on combinations of electron beam lithography (EBL) and atomic layer deposition (ALD). However, the patterning area is relatively small as limited by EBL, and the fabrication yield is not very high due to technical challenges. Here we report an improved procedure to fabricate flat metallic surfaces with sub-10 nm features based on ALD processes. To demonstrate the scalability of the new manufacturing method, we combine the ALD process with large area optical interference patterning, which is particularly promising for the development of practical applications for nanoelectronics and nanophotonics with extremely strong confinement of electromagnetic fields.

  3. Atomic layer deposition of metal sulfide materials.

    PubMed

    Dasgupta, Neil P; Meng, Xiangbo; Elam, Jeffrey W; Martinson, Alex B F

    2015-02-17

    CONSPECTUS: The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivating interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry. ALD of sulfide materials typically uses metalorganic precursors and hydrogen sulfide (H2S). As in oxide ALD, the precursor chemistry is critical to controlling both the film growth and properties including roughness, crystallinity, and impurity levels. By modification of the precursor sequence, multicomponent sulfides have been deposited, although challenges remain because of the higher propensity for cation exchange reactions, greater diffusion rates, and unintentional annealing of this more labile class of materials. A deeper understanding of these surface chemical reactions has been achieved through a combination of in situ studies and quantum-chemical calculations. As this understanding matures, so does our ability to deterministically tailor film properties to new applications and more sophisticated devices. This Account highlights the attributes of ALD chemistry that are unique to metal sulfides and surveys recent applications of these materials in photovoltaics, energy storage, and photonics. Within each application

  4. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices. PMID:26839956

  5. USE OF ATOMIC LAYER DEPOSITION OF FUNCTIONALIZATION OF NANOPOROUS BIOMATERIALS

    SciTech Connect

    Brigmon, R.; Narayan, R.; Adiga, S.; Pellin, M.; Curtiss, L.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N.; Elam, J.

    2010-02-08

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials.

  6. Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.

    PubMed

    Liu, Yingnan; Ghosh, Rudresh; Wu, Di; Ismach, Ariel; Ruoff, Rodney; Lai, Keji

    2014-08-13

    The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area synthesis of highly crystalline monolayers with a low density of electronically active defects is imperative. Here, we demonstrate the electrical imaging of dendritic ad-layers and grain boundaries in monolayer molybdenum disulfide (MoS2) grown by a vapor transport technique using microwave impedance microscopy. The micrometer-sized precipitates in our films, which appear as a second layer of MoS2 in conventional height and optical measurements, show ∼ 2 orders of magnitude higher conductivity than that of the single layer. The zigzag grain boundaries, on the other hand, are shown to be more resistive than the crystalline grains, consistent with previous studies. Our ability to map the local electrical properties in a rapid and nondestructive manner is highly desirable for optimizing the growth process of large-scale MoS2 atomic layers. PMID:25019334

  7. 500 V/200 A fault current limiter modules made of large-area MOD-YBa2Cu3O7 thin films with high-resistivity Au-Ag alloy shunt layers

    NASA Astrophysics Data System (ADS)

    Yamasaki, H.; Arai, K.; Kaiho, K.; Nakagawa, Y.; Sohma, M.; Kondo, W.; Yamaguchi, I.; Matsui, H.; Kumagai, T.; Natori, N.; Higuchi, N.

    2009-12-01

    We developed 500 Vrms/ 200 Arms superconducting thin-film fault current limiter (FCL) modules that can withstand high electric fields (E>30 Vrms cm-1) by using large-area YBa2Cu3O7 (YBCO) thin films with high-resistivity Au-Ag alloy shunt layers. Au-Ag alloy films about 60 nm thick were sputter-deposited on YBCO/CeO2/sapphire films (2.7 cm × 20 cm) prepared using a fluorine-free MOD method. Each 20 cm long Au-Ag/YBCO film was then divided into three segments (each ~5.7 cm long) by four Ag electrodes deposited on the Au-Ag layer, resulting in an effective length of 17 cm. The 500 V/200 A FCL modules were then fabricated by first connecting two of the segmented films in parallel using Ag-sheathed Bi-2223 superconducting tapes and then connecting in parallel an external resistor and a capacitor for each segment to protect the Au-Ag/YBCO film from hot spots. Switching tests using a short-circuit generator revealed that all the modules carried a superconducting ac current of >=237 Arms and that modules prepared with YBCO films having a relatively homogeneous critical current Ic distribution successfully withstood >=515 Vrms for five cycles without any damage. These results demonstrate that (a) the FCL modules fabricated here successfully achieved the rated current of 200 Arms and rated voltage of 500 Vrms and (b) total area of the YBCO films on sapphire substrates required for the 500 V/200 A (100 kV A) module was less than one-third that for conventional thin-film FCL modules that use gold shunt layers, leading to the significantly reduced cost of thin-film FCLs. Film damage due to hot spots depended on the difference in Ic between the two parallel-connected films and on the inhomogeneity of the Ic distribution in the film, and is most probably due to nonlinear current flows at the moment of quenching that cause local overheating.

  8. Conducting atomic force microscopy of alkane layers on graphite

    SciTech Connect

    Klein, D.L.; McEuen, P.L.

    1995-05-08

    We have used an atomic force microscope with a conducting tip to investigate the layering of hexadecane on graphite. Discrete jumps were observed in both the tip--sample conductance and separation as individual liquid layers are penetrated. These conductance measurements extend solvation studies to higher force scales than have been previously achieved, and can be used to determine when the tip makes contact with the substrate. The layering also enables the formation of stable tunneling junctions.

  9. Compositional characterization of atomic layer deposited alumina

    SciTech Connect

    Philip, Anu; Thomas, Subin; Kumar, K. Rajeev

    2014-01-28

    As the microelectronic industry demands feature size in the order of few and sub nanometer regime, the film composition and other film properties become critical issues and ALD has emerged as the choice of industry. Aluminum oxide is a material with wide applications in electronic and optoelectronic devices and protective and ion barrier layers. Al{sub 2}O{sub 3} is an excellent dielectric because of its large band gap (8.7eV), large band offsets with silicon. We have deposited thin layers of alumina on silicon wafer (p-type) for gate dielectric applications by ALD technique and compositional characterizations of the deposited thin films were done using EDS, XPS and FTIR spectra.

  10. Atomic-Layer Engineering of Oxide Superconductors

    SciTech Connect

    Bozovic I.; Bollinger, A.T.; Eckstein, J.N.; Dubuis, G.; Pavuna, D.

    2012-03-01

    Molecular beam epitaxy technique has enabled synthesis of atomically smooth thin films, multilayers, and superlattices of cuprates and other complex oxides. Such heterostructures show high temperature superconductivity and enable novel experiments that probe the basic physics of this phenomenon. For example, it was established that high temperature superconductivity and anti-ferromagnetic phases separate on Angstrom scale, while the pseudo-gap state apparently mixes with high temperature superconductivity over an anomalously large length scale (the 'Giant Proximity Effect'). We review some recent experiments on such films and superlattices, including X-ray diffraction, atomic force microscopy, angle-resolved time of flight ion scattering and recoil spectroscopy, transport measurements, high resolution transmission electron microscopy, resonant X-ray scattering, low-energy muon spin resonance, and ultrafast photo-induced reflection high energy electron diffraction. The results include an unambiguous demonstration of strong coupling of in-plane charge excitations to out-of-plane lattice vibrations, a discovery of interface high temperature superconductivity that occurs in a single CuO{sub 2} plane, evidence for local pairs, and establishing tight limits on the temperature range of superconducting fluctuations.

  11. An Introduction to Atomic Layer Deposition with Thermal Applications

    NASA Technical Reports Server (NTRS)

    Dwivedi, Vivek H.

    2015-01-01

    Atomic Layer Deposition (ALD) is a cost effective nano-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. Through the introduction of paired precursor gases thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, and metals to high aspect ratio geometries. This talk will focus on the utilization of ALD for engineering applications.

  12. Plasma enhanced atomic layer deposition of ultrathin oxides on graphene

    NASA Astrophysics Data System (ADS)

    Trimble, Christie J.; Zaniewski, Anna M.; Kaur, Manpuneet; Nemanich, Robert J.

    2015-03-01

    Graphene, a single atomic layer of sp2 bonded carbon atoms, possesses extreme material properties that point toward a plethora of potential electronic applications. Many of these possibilities require the combination of graphene with dielectric materials such as metal oxides. Simultaneously, there is interest in new physical properties that emerge when traditionally three dimensional materials are constrained to ultrathin layers. For both of these objectives, we explore deposition of ultrathin oxide layers on graphene. In this project, we perform plasma enhanced atomic layer deposition (PEALD) of aluminum oxide on graphene that has been grown by chemical vapor deposition atop copper foil and achieve oxide layers that are <1.5 nm. Because exposure to oxygen plasma can cause the graphene to deteriorate, we explore techniques to mitigate this effect and optimize the PEALD process. Following deposition, the graphene and oxide films are transferred to arbitrary substrates for further analysis. We use x-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy to assess the quality of the resulting films. This work is supported by the National Science Foundation under Grant # DMR-1206935.

  13. Dimensional dependence of phonon transport in freestanding atomic layer systems

    NASA Astrophysics Data System (ADS)

    Kim, Duckjong; Hwangbo, Yun; Zhu, Lijing; Mag-Isa, Alexander E.; Kim, Kwang-Seop; Kim, Jae-Hyun

    2013-11-01

    Due to the fast development of nanotechnology, we have the capability of manipulating atomic layer systems such as graphene, hexagonal boron nitride and dichalcogenides. The major concern in the 2-dimensional nanostructures is how to preserve their exceptional single-layer properties in 3-dimensional bulk structures. In this study, we report that the extreme phonon transport in graphene is highly affected by the graphitic layer stacking based on experimental investigation of the thermal conduction in few-layer graphene, 1-7 layers thick, suspended over holes of various diameters. We fabricate freestanding axisymmetric graphene structures without any perturbing substrate, and measure the in-plane transport property in terms of thermal conduction by using Raman spectroscopy. From the difference in susceptibility to substrate effect, size effect on hot-spot temperature variation and layer number dependence of thermal conductivity, we show that the graphitic membranes with 2 or more layers have characteristics similar to 3-dimensional graphite, which are very different from those of 2-dimensional graphene membranes. This implies that the scattering of out-of-plane phonons by interlayer atomic coupling could be a key mechanism governing the intrinsic thermal property.Due to the fast development of nanotechnology, we have the capability of manipulating atomic layer systems such as graphene, hexagonal boron nitride and dichalcogenides. The major concern in the 2-dimensional nanostructures is how to preserve their exceptional single-layer properties in 3-dimensional bulk structures. In this study, we report that the extreme phonon transport in graphene is highly affected by the graphitic layer stacking based on experimental investigation of the thermal conduction in few-layer graphene, 1-7 layers thick, suspended over holes of various diameters. We fabricate freestanding axisymmetric graphene structures without any perturbing substrate, and measure the in-plane transport

  14. Large-area high-quality graphene on Ge(001)/Si(001) substrates.

    PubMed

    Pasternak, I; Dabrowski, P; Ciepielewski, P; Kolkovsky, V; Klusek, Z; Baranowski, J M; Strupinski, W

    2016-06-01

    Various experimental data revealing large-area high-quality graphene films grown by the CVD method on Ge(001)/Si(001) substrates are presented. SEM images have shown that the structure of nano-facets is formed on the entire surface of Ge(001), which is covered by a graphene layer over the whole macroscopic sample surface of 1 cm(2). The hill-and-valley structures are positioned 90° to each other and run along the <100> direction. The hill height in relation to the valley measured by STM is about 10 nm. Raman measurements have shown that a uniform graphene monolayer covers the nano-facet structures on the Ge(001) surface. Raman spectroscopy has also proved that the grown graphene monolayer is characterized by small strain variations and minimal charge fluctuations. Atomically resolved STM images on the hills of the nanostructures on the Ge(001) surface have confirmed the presence of a graphene monolayer. In addition, the STS/CITS maps show that high-quality graphene has been obtained on such terraces. The subsequent coalescence of graphene domains has led to a relatively well-oriented large-area layer. This is confirmed by LEED measurements, which have indicated that two orientations are preferable in the grown large-area graphene monolayer. The presence of large-area coverage by graphene has been also confirmed by low temperature Hall measurements of a macroscopic sample, showing an n-type concentration of 9.3 × 10(12) cm(-2) and a mobility of 2500 cm(2) V(-1) s(-1). These important characteristic features of graphene indicate a high homogeneity of the layer grown on the large area Ge(001)/Si(001) substrates. PMID:27189131

  15. Large-area high-quality graphene on Ge(001)/Si(001) substrates

    NASA Astrophysics Data System (ADS)

    Pasternak, I.; Dabrowski, P.; Ciepielewski, P.; Kolkovsky, V.; Klusek, Z.; Baranowski, J. M.; Strupinski, W.

    2016-05-01

    Various experimental data revealing large-area high-quality graphene films grown by the CVD method on Ge(001)/Si(001) substrates are presented. SEM images have shown that the structure of nano-facets is formed on the entire surface of Ge(001), which is covered by a graphene layer over the whole macroscopic sample surface of 1 cm2. The hill-and-valley structures are positioned 90° to each other and run along the <100> direction. The hill height in relation to the valley measured by STM is about 10 nm. Raman measurements have shown that a uniform graphene monolayer covers the nano-facet structures on the Ge(001) surface. Raman spectroscopy has also proved that the grown graphene monolayer is characterized by small strain variations and minimal charge fluctuations. Atomically resolved STM images on the hills of the nanostructures on the Ge(001) surface have confirmed the presence of a graphene monolayer. In addition, the STS/CITS maps show that high-quality graphene has been obtained on such terraces. The subsequent coalescence of graphene domains has led to a relatively well-oriented large-area layer. This is confirmed by LEED measurements, which have indicated that two orientations are preferable in the grown large-area graphene monolayer. The presence of large-area coverage by graphene has been also confirmed by low temperature Hall measurements of a macroscopic sample, showing an n-type concentration of 9.3 × 1012 cm-2 and a mobility of 2500 cm2 V-1 s-1. These important characteristic features of graphene indicate a high homogeneity of the layer grown on the large area Ge(001)/Si(001) substrates.

  16. Single-atom Catalysis Using Pt/Graphene Achieved through Atomic Layer Deposition

    PubMed Central

    Sun, Shuhui; Zhang, Gaixia; Gauquelin, Nicolas; Chen, Ning; Zhou, Jigang; Yang, Songlan; Chen, Weifeng; Meng, Xiangbo; Geng, Dongsheng; Banis, Mohammad N.; Li, Ruying; Ye, Siyu; Knights, Shanna; Botton, Gianluigi A.; Sham, Tsun-Kong; Sun, Xueliang

    2013-01-01

    Platinum-nanoparticle-based catalysts are widely used in many important chemical processes and automobile industries. Downsizing catalyst nanoparticles to single atoms is highly desirable to maximize their use efficiency, however, very challenging. Here we report a practical synthesis for isolated single Pt atoms anchored to graphene nanosheet using the atomic layer deposition (ALD) technique. ALD offers the capability of precise control of catalyst size span from single atom, subnanometer cluster to nanoparticle. The single-atom catalysts exhibit significantly improved catalytic activity (up to 10 times) over that of the state-of-the-art commercial Pt/C catalyst. X-ray absorption fine structure (XAFS) analyses reveal that the low-coordination and partially unoccupied densities of states of 5d orbital of Pt atoms are responsible for the excellent performance. This work is anticipated to form the basis for the exploration of a next generation of highly efficient single-atom catalysts for various applications.

  17. Vibration atomic layer deposition for conformal nanoparticle coating

    SciTech Connect

    Park, Suk Won; Woo Kim, Jun; Jong Choi, Hyung; Hyung Shim, Joon

    2014-01-15

    A vibration atomic layer deposition reactor was developed for fabricating a conformal thin-film coating on nanosize particles. In this study, atomic layer deposition of 10–15-nm-thick Al{sub 2}O{sub 3} films was conducted on a high-surface-area acetylene black powder with particle diameters of 200–250 nm. Intense vibration during the deposition resulted in the effective separation of particles, overcoming the interparticle agglomeration force and enabling effective diffusion of the precursor into the powder chunk; this phenomenon led to the formation of a conformal film coating on the nanopowder particles. It was also confirmed that the atomic layer deposition Al{sub 2}O{sub 3} films initially grew on the high-surface-area acetylene black powder particles as discrete islands, presumably because chemisorption of the precursor and water occurred only on a few sites on the high-surface-area acetylene black powder surface. Relatively sluggish growth of the films during the initial atomic layer deposition cycles was identified from composition analysis.

  18. Cost-Effective Systems for Atomic Layer Deposition

    ERIC Educational Resources Information Center

    Lubitz, Michael; Medina, Phillip A., IV; Antic, Aleks; Rosin, Joseph T.; Fahlman, Bradley D.

    2014-01-01

    Herein, we describe the design and testing of two different home-built atomic layer deposition (ALD) systems for the growth of thin films with sub-monolayer control over film thickness. The first reactor is a horizontally aligned hot-walled reactor with a vacuum purging system. The second reactor is a vertically aligned cold-walled reactor with a…

  19. Studies of dielectrics on graphite and large-area graphene

    NASA Astrophysics Data System (ADS)

    Pirkle, Adam R.

    Graphene is a promising material as an alternative to Si in future logic devices due to extremely high carrier mobility and other attractive physical and electronic properties. While the exact structure of commercially viable graphene-based device architectures is not yet clear, adoption of graphene in such an architecture will certainly require the deposition of scaled dielectrics. Numerous challenges arise, many due to the surface chemistry of graphene which is dramatically different from that of bulk semiconductors due to the absence of bonding states resulting from the two-dimensional nature of sp2 C-C bonds in graphene. The low surface reactivity means that application of conventional dielectric deposition processes generally results in poor, non-uniform nucleation, hindering dielectric scaling below thicknesses of 20-50 nm. This dissertation focuses on studies of the graphene surface and potential routes to scalable dielectric deposition by means of atomic layer deposition (ALD) and physical vapor deposition (PVD). The role of initial surface condition and cleanliness is considered, and several approaches for the formation of dielectric nucleation layers are studied. Several physical and electrical techniques are employed including x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, atomic force microscopy (AFM) and electrical characterization of graphene FETs and capacitors. Additionally, the lack of commercial availability of high quality large-area graphene samples required for these dielectric studies led to the development of in-house capability for CVD growth of graphene on copper substrates and transfer to insulating substrates. Studies of this growth and transfer process are presented.

  20. Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates

    SciTech Connect

    Clancey, Joel W.; Cavanagh, Andrew S.; Kukreja, Ratandeep S.; Kongkanand, Anusorn; George, Steven M.

    2015-01-15

    Platinum (Pt) atomic layer deposition (ALD) usually yields Pt nanoparticles during initial film growth. In contrast, deposition of continuous and ultrathin Pt films is needed for many important applications, such as the oxygen reduction reaction in polymer electrolyte membrane (PEM) fuel cells. A continuous and high radius of curvature Pt film is more stable and has a higher area-specific activity than the Pt nanoparticles commonly used in PEM fuel cells. However, the Pt film must be ultrathin and have a large surface area to be cost effective. In this paper, a review of earlier Pt ALD studies on flat substrates is presented that demonstrates that tungsten, with a higher surface energy than platinum, can serve as an adhesion layer to achieve Pt ALD films that are continuous at ultrathin thicknesses of ∼1.5 nm. This work utilized MeCpPtMe{sub 3} and H{sub 2} plasma as the Pt ALD reactants. The deposition of continuous and ultrathin Pt ALD films using MeCpPtMe{sub 3} and H{sub 2} plasma as the reactants is then studied on two high surface area substrate materials: TiO{sub 2} nanoparticles and 3M nanostructured thin film (NSTF). Transmission electron microscopy (TEM) showed uniform and continuous Pt films with thicknesses of ∼4 nm on the TiO{sub 2} nanoparticles. TEM with electron energy loss spectroscopy analysis revealed W ALD and Pt ALD films with thicknesses of ∼3 nm that were continuous and conformal on the high aspect ratio NSTF substrates. These results demonstrate that cost effective use of Pt ALD on high surface area substrates is possible for PEM fuel cells.

  1. Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

    SciTech Connect

    Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H.; Kinge, Sachin

    2015-10-12

    Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO{sub 2} layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10{sup −2} A W{sup −1} and a shot-derived specific detectivity of 3 × 10{sup 9} Jones at 1530 nm wavelength.

  2. Growth mode evolution of hafnium oxide by atomic layer deposition

    SciTech Connect

    Nie, Xianglong; Ma, Fei; Ma, Dayan; Xu, Kewei

    2014-01-15

    HfO{sub 2} thin films were deposited using tetrakis-ethylmethylamido hafnium and H{sub 2}O as precursors on silicon by atomic layer deposition (ALD). The morphology and microstructures at different ALD cycles were characterized by atomic force microscopy and high-resolution transmission electron microscopy. Based on the height–height correlation function and power spectral density function, quantitative analysis of surface morphologies was performed. Three characteristic dimensions (ξ{sub 1}, ξ{sub 2}, and ξ{sub 3}) corresponding to three surface structures, islands, local and global fluctuations, were identified. The evolution of ALD growth mode at range of the three critical scales was investigated, respectively. It suggests the transformation of growth mode from quasi two-dimensional layer-by-layer to three-dimensional island for global fluctuations.

  3. Materials Science and Engineering with Two-dimensional Atomic Layers

    NASA Astrophysics Data System (ADS)

    Ajayan, Pulickel M.

    There has been tremendous interest in recent years to study two-dimensional atomic layers which form building blocks of many bulk layered materials and devices. This talk will focus on the materials science aspects of 2D atomic layer, in particular the emerging structures based on transition metal chalcogenides. Several aspects that include synthesis, characterization and device fabrication will be explored with the objective of achieving all 2D functional structures for future technologies. The concept of nanoscale engineering and the goal of creating new artificially stacked van der Waals solids will be discussed through a number of examples. The challenges involved in scalable synthesis, doping, defect engineering, surface modifications of monolayers and the controlled creation of stacked structures and in-plane junctions from multiple compositions will be discussed. Some of anticipated applications of these materials will also be discussed.

  4. Atomic and molecular layer deposition for surface modification

    SciTech Connect

    Vähä-Nissi, Mika; Sievänen, Jenni; Salo, Erkki; Heikkilä, Pirjo; Kenttä, Eija; Johansson, Leena-Sisko; Koskinen, Jorma T.; Harlin, Ali

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  5. High-Throughput Fabrication of Resonant Metamaterials with Ultrasmall Coaxial Apertures via Atomic Layer Lithography.

    PubMed

    Yoo, Daehan; Nguyen, Ngoc-Cuong; Martin-Moreno, Luis; Mohr, Daniel A; Carretero-Palacios, Sol; Shaver, Jonah; Peraire, Jaime; Ebbesen, Thomas W; Oh, Sang-Hyun

    2016-03-01

    We combine atomic layer lithography and glancing-angle ion polishing to create wafer-scale metamaterials composed of dense arrays of ultrasmall coaxial nanocavities in gold films. This new fabrication scheme makes it possible to shrink the diameter and increase the packing density of 2 nm-gap coaxial resonators, an extreme subwavelength structure first manufactured via atomic layer lithography, both by a factor of 100 with respect to previous studies. We demonstrate that the nonpropagating zeroth-order Fabry-Pérot mode, which possesses slow light-like properties at the cutoff resonance, traps infrared light inside 2 nm gaps (gap volume ∼ λ(3)/10(6)). Notably, the annular gaps cover only 3% or less of the metal surface, while open-area normalized transmission is as high as 1700% at the epsilon-near-zero (ENZ) condition. The resulting energy accumulation alongside extraordinary optical transmission can benefit applications in nonlinear optics, optical trapping, and surface-enhanced spectroscopies. Furthermore, because the resonance wavelength is independent of the cavity length and dramatically red shifts as the gap size is reduced, large-area arrays can be constructed with λresonance ≫ period, making this fabrication method ideal for manufacturing resonant metamaterials. PMID:26910363

  6. High-Throughput Fabrication of Resonant Metamaterials with Ultrasmall Coaxial Apertures via Atomic Layer Lithography

    PubMed Central

    2016-01-01

    We combine atomic layer lithography and glancing-angle ion polishing to create wafer-scale metamaterials composed of dense arrays of ultrasmall coaxial nanocavities in gold films. This new fabrication scheme makes it possible to shrink the diameter and increase the packing density of 2 nm-gap coaxial resonators, an extreme subwavelength structure first manufactured via atomic layer lithography, both by a factor of 100 with respect to previous studies. We demonstrate that the nonpropagating zeroth-order Fabry-Pérot mode, which possesses slow light-like properties at the cutoff resonance, traps infrared light inside 2 nm gaps (gap volume ∼ λ3/106). Notably, the annular gaps cover only 3% or less of the metal surface, while open-area normalized transmission is as high as 1700% at the epsilon-near-zero (ENZ) condition. The resulting energy accumulation alongside extraordinary optical transmission can benefit applications in nonlinear optics, optical trapping, and surface-enhanced spectroscopies. Furthermore, because the resonance wavelength is independent of the cavity length and dramatically red shifts as the gap size is reduced, large-area arrays can be constructed with λresonance ≫ period, making this fabrication method ideal for manufacturing resonant metamaterials. PMID:26910363

  7. Interfacial Atomic Structure of Twisted Few-Layer Graphene

    PubMed Central

    Ishikawa, Ryo; Lugg, Nathan R.; Inoue, Kazutoshi; Sawada, Hidetaka; Taniguchi, Takashi; Shibata, Naoya; Ikuhara, Yuichi

    2016-01-01

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene. PMID:26888259

  8. Interfacial Atomic Structure of Twisted Few-Layer Graphene.

    PubMed

    Ishikawa, Ryo; Lugg, Nathan R; Inoue, Kazutoshi; Sawada, Hidetaka; Taniguchi, Takashi; Shibata, Naoya; Ikuhara, Yuichi

    2016-01-01

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene. PMID:26888259

  9. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

    SciTech Connect

    Wu, Wei Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy

    2014-07-28

    We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

  10. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ≤0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 °C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 °C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ≤ 400 °C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ≥ 500 °C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 °C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  11. Carbon nanotube forests growth using catalysts from atomic layer deposition

    SciTech Connect

    Chen, Bingan; Zhang, Can; Esconjauregui, Santiago; Xie, Rongsi; Zhong, Guofang; Robertson, John; Bhardwaj, Sunil; Cepek, Cinzia

    2014-04-14

    We have grown carbon nanotubes using Fe and Ni catalyst films deposited by atomic layer deposition. Both metals lead to catalytically active nanoparticles for growing vertically aligned nanotube forests or carbon fibres, depending on the growth conditions and whether the substrate is alumina or silica. The resulting nanotubes have narrow diameter and wall number distributions that are as narrow as those grown from sputtered catalysts. The state of the catalyst is studied by in-situ and ex-situ X-ray photoemission spectroscopy. We demonstrate multi-directional nanotube growth on a porous alumina foam coated with Fe prepared by atomic layer deposition. This deposition technique can be useful for nanotube applications in microelectronics, filter technology, and energy storage.

  12. Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

    SciTech Connect

    Long, Rong; Dunn, Martin L.

    2014-06-21

    Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

  13. Overview of atomic layer etching in the semiconductor industry

    SciTech Connect

    Kanarik, Keren J. Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A.

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  14. Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wen, Yao; Shang, Xunzhong; Dong, Ji; Xu, Kai; He, Jun; Jiang, Chao

    2015-07-01

    Atomically thin hexagonal boron nitride (h-BN) has been demonstrated to be an excellent dielectric layer as well as an ideal van der Waals epitaxial substrate for fabrication of two-dimensional (2D) atomic layers and their vertical heterostructures. Although many groups have obtained large-scale monolayer h-BN through low pressure chemical vapor deposition (LPCVD), it is still a challenge to grow clean monolayers without the reduction of domain size. Here we report the synthesis of large-area (4 × 2 cm2) high quality monolayer h-BN with an ultraclean and unbroken surface on copper foil by using LPCVD. A detailed investigation of the key factors affecting growth and transfer of the monolayer was carried out in order to eliminate the adverse effects of impurity particles. Furthermore, an optimized transfer approach allowed the nondestructive and clean transfer of the monolayer from copper foil onto an arbitrary substrate, including a flexible substrate, under mild conditions. Atomic force microscopy indicated that the root-mean-square (RMS) roughness of the monolayer h-BN on SiO2 was less than 0.269 nm for areas with fewer wrinkles. Selective area electron diffraction analysis of the h-BN revealed a pattern of hexagonal diffraction spots, which unambiguously demonstrated its highly crystalline character. Our work paves the way toward the use of ultraclean and large-area monolayer h-BN as the dielectric layer in the fabrication of high performance electronic and optoelectronic devices for novel 2D atomic layer materials.

  15. Passivation effects of atomic-layer-deposited aluminum oxide

    NASA Astrophysics Data System (ADS)

    Kotipalli, R.; Delamare, R.; Poncelet, O.; Tang, X.; Francis, L. A.; Flandre, D.

    2013-09-01

    Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012-1013 cm-2) in combination with a low density of interface states (Dit). This paper investigates the passivation quality of thin (15 nm) Al2O3 films deposited by two different techniques: plasma-enhanced atomic layer deposition (PE-ALD) and Thermal atomic layer deposition (T-ALD). Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2) (20 nm), SiO2 (20 nm) deposited by plasma-enhanced chemical vapour deposition (PECVD) and hydrogenated amorphous silicon nitride (a-SiNx:H) (20 nm) also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS) capacitors were fabricated for Qf and Dit extraction through Capacitance-Voltage-Conductance (C-V-G) measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV). The influence of extracted C-V-G parameters (Qf,Dit) on the injection dependent lifetime measurements τ(Δn), and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

  16. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit

    2014-01-15

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

  17. Nanostructure templating using low temperature atomic layer deposition

    DOEpatents

    Grubbs, Robert K.; Bogart, Gregory R.; Rogers, John A.

    2011-12-20

    Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.

  18. Epitaxial growth of large-area bilayer graphene on Ru(0001)

    SciTech Connect

    Que, Yande; Xiao, Wende E-mail: hjgao@iphy.ac.cn; Fei, Xiangmin; Chen, Hui; Du, S. X.; Gao, H.-J. E-mail: hjgao@iphy.ac.cn; Huang, Li

    2014-03-03

    Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moiré pattern with a periodicity of ∼21.5 nm and a mixture of AA- and AB-stacking. The √3 × √3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized π-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene.

  19. Large-area synthesis of WSe2 from WO3 by selenium-oxygen ion exchange

    NASA Astrophysics Data System (ADS)

    Browning, Paul; Eichfeld, Sarah; Zhang, Kehao; Hossain, Lorraine; Lin, Yu-Chuan; Wang, Ke; Lu, Ning; Waite, A. R.; Voevodin, A. A.; Kim, Moon; Robinson, Joshua A.

    2015-03-01

    Few-layer tungsten diselenide (WSe2) is attractive as a next-generation electronic material as it exhibits modest carrier mobilities and energy band gap in the visible spectra, making it appealing for photovoltaic and low-powered electronic applications. Here we demonstrate the scalable synthesis of large-area, few-layer WSe2 via replacement of oxygen in hexagonally stabilized tungsten oxide films using dimethyl selenium. Cross-sectional transmission electron microscopy reveals successful control of the final WSe2 film thickness through control of initial tungsten oxide thickness, as well as development of layered films with grain sizes up to several hundred nanometers. Raman spectroscopy and atomic force microscopy confirms high crystal uniformity of the converted WSe2, and time domain thermo-reflectance provide evidence that near record low thermal conductivity is achievable in ultra-thin WSe2 using this method.

  20. High performance Bi-layered electrolytes via atomic layer deposition for solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Jee, Youngseok; Cho, Gu Young; An, Jihwan; Kim, Hae-Ryoung; Son, Ji-Won; Lee, Jong-Ho; Prinz, Fritz B.; Lee, Min Hwan; Cha, Suk Won

    2014-05-01

    This study investigates the functionality of bi-layered electrolytes in intermediate temperature solid oxide fuel cells. A thin yttria-stabilized zirconia (YSZ) layer is expected to protect the underlying gadolinia doped ceria (GDC) electrolyte from being chemically reduced and significantly improve cell stability and durability. Although a thinner YSZ layer is preferable to minimize ohmic loss, there are limitations as to how thin the YSZ film can be and still serves as a valid protection layer. The limitation is partially attributed to the inter-diffusion and significant morphological changes during the high temperature sintering processes. In this study, a stable operation was demonstrated for extended duration (>80 h) with only a 28 nm YSZ layer (corresponding to a YSZ/GDC thickness ratio of 6.5 × 10-5) when limitations in both fabrication (<∼800 °C) and operating conditions (<∼600 °C, dry H2) were imposed. Furthermore, the functionality of a protection layer with a given thickness was found to strongly depend on the method of depositing the protective layer. Protective layers deposited by atomic layer deposition (ALD) can be much thinner than those prepared by physical vapor deposition; the YSZ/GDC thickness ratio for a stable operation approached close to a theoretical value when the ALD was used.

  1. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

    PubMed Central

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-01-01

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene “painting” on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis. PMID:24728289

  2. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

    NASA Astrophysics Data System (ADS)

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-04-01

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene ``painting'' on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

  3. Method of Making Large Area Nanostructures

    NASA Technical Reports Server (NTRS)

    Marks, Alvin M.

    1995-01-01

    A method which enables the high speed formation of nanostructures on large area surfaces is described. The method uses a super sub-micron beam writer (Supersebter). The Supersebter uses a large area multi-electrode (Spindt type emitter source) to produce multiple electron beams simultaneously scanned to form a pattern on a surface in an electron beam writer. A 100,000 x 100,000 array of electron point sources, demagnified in a long electron beam writer to simultaneously produce 10 billion nano-patterns on a 1 meter squared surface by multi-electron beam impact on a 1 cm squared surface of an insulating material is proposed.

  4. Atomic Layer Deposition of L-Alanine Polypeptide

    DOE PAGESBeta

    Fu, Yaqin; Li, Binsong; Jiang, Ying-Bing; Dunphy, Darren R.; Tsai, Andy; Tam, Siu-Yue; Fan, Hongyou Y.; Zhang, Hongxia; Rogers, David; Rempe, Susan; et al

    2014-10-30

    L-Alanine polypeptide thin films were synthesized via atomic layer deposition (ALD). Rather, instead of using an amino acid monomer as the precursor, an L-alanine amino acid derivatized with a protecting group was used to prevent self-polymerization, increase the vapor pressure, and allow linear cycle-by-cycle growth emblematic of ALD. Moreover, the successful deposition of a conformal polypeptide film has been confirmed by FTIR, TEM, and Mass Spectrometry, and the ALD process has been extended to polyvaline.

  5. Results from Point Contact Tunnelling Spectroscopy and Atomic Layer Deposition

    SciTech Connect

    Proslier, Th.; Zasadzinski, J.; Ciovati, Gianluigi; Kneisel, Peter K.; Elam, J. W.; Norem, J.; Pellin, M. J.

    2009-11-01

    We have shown previously that magnetic niobium oxides can influence the superconducting density of states at the surface of cavity-grade niobium coupons. We will present recent results obtained by Point Contact Tunneling spectroscopy (PCT) on coupons removed from hot and cold spots in a niobium cavity, as well as a comparative study of magnetic oxides on mild baked/unbaked electropolished coupons. We will also describe recent results obtained from coated cavities, ALD films properties and new materials using Atomic Layer Deposition (ALD).

  6. Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching.

    PubMed

    Ghazaryan, Lilit; Kley, E-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2016-06-24

    A new route to prepare nanoporous SiO2 films by mixing atomic-layer-deposited alumina and silica in an Å-scale is presented. The selective removal of Al2O3 from the composites using wet chemical etching with phosphoric acid resulted in nanoporous thin SiO2 layers. A diffusion-controlled dissolution mechanism is identified whereby an interesting reorganization of the residual SiO2 is observed. The atomic scale oxide mixing is decisive in attaining and tailoring the film porosity. The porosity and the refractive index of nanoporous silica films were tailored from 9% to 69% and from 1.40 to 1.13, respectively. The nanoporous silica was successfully employed as antireflection coatings and as diffusion membranes to encapsulate nanostructures. PMID:27176497

  7. Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching

    NASA Astrophysics Data System (ADS)

    Ghazaryan, Lilit; Kley, E.-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2016-06-01

    A new route to prepare nanoporous SiO2 films by mixing atomic-layer-deposited alumina and silica in an Å-scale is presented. The selective removal of Al2O3 from the composites using wet chemical etching with phosphoric acid resulted in nanoporous thin SiO2 layers. A diffusion-controlled dissolution mechanism is identified whereby an interesting reorganization of the residual SiO2 is observed. The atomic scale oxide mixing is decisive in attaining and tailoring the film porosity. The porosity and the refractive index of nanoporous silica films were tailored from 9% to 69% and from 1.40 to 1.13, respectively. The nanoporous silica was successfully employed as antireflection coatings and as diffusion membranes to encapsulate nanostructures.

  8. Atomic layer deposition of hafnium oxide on germanium substrates

    NASA Astrophysics Data System (ADS)

    Delabie, Annelies; Puurunen, Riikka L.; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Heyns, Marc M.; Meuris, Marc; Viitanen, Minna M.; Brongersma, Hidde H.; de Ridder, Marco; Goncharova, Lyudmila V.; Garfunkel, Eric; Gustafsson, Torgny; Tsai, Wilman

    2005-03-01

    Germanium combined with high-κ dielectrics has recently been put forth by the semiconductor industry as potential replacement for planar silicon transistors, which are unlikely to accommodate the severe scaling requirements for sub-45-nm generations. Therefore, we have studied the atomic layer deposition (ALD) of HfO2 high-κ dielectric layers on HF-cleaned Ge substrates. In this contribution, we describe the HfO2 growth characteristics, HfO2 bulk properties, and Ge interface. Substrate-enhanced HfO2 growth occurs: the growth per cycle is larger in the first reaction cycles than the steady growth per cycle of 0.04nm. The enhanced growth goes together with island growth, indicating that more than a monolayer coverage of HfO2 is required for a closed film. A closed HfO2 layer is achieved after depositing 4-5HfO2 monolayers, corresponding to about 25 ALD reaction cycles. Cross-sectional transmission electron microscopy images show that HfO2 layers thinner than 3nm are amorphous as deposited, while local epitaxial crystallization has occurred in thicker HfO2 films. Other HfO2 bulk properties are similar for Ge and Si substrates. According to this physical characterization study, HfO2 can be used in Ge-based devices as a gate oxide with physical thickness scaled down to 1.6nm.

  9. Large area high-speed metrology SPM system

    NASA Astrophysics Data System (ADS)

    Klapetek, P.; Valtr, M.; Picco, L.; Payton, O. D.; Martinek, J.; Yacoot, A.; Miles, M.

    2015-02-01

    We present a large area high-speed measuring system capable of rapidly generating nanometre resolution scanning probe microscopy data over mm2 regions. The system combines a slow moving but accurate large area XYZ scanner with a very fast but less accurate small area XY scanner. This arrangement enables very large areas to be scanned by stitching together the small, rapidly acquired, images from the fast XY scanner while simultaneously moving the slow XYZ scanner across the region of interest. In order to successfully merge the image sequences together two software approaches for calibrating the data from the fast scanner are described. The first utilizes the low uncertainty interferometric sensors of the XYZ scanner while the second implements a genetic algorithm with multiple parameter fitting during the data merging step of the image stitching process. The basic uncertainty components related to these high-speed measurements are also discussed. Both techniques are shown to successfully enable high-resolution, large area images to be generated at least an order of magnitude faster than with a conventional atomic force microscope.

  10. Electrochemical Reaction in Single Layer MoS2: Nanopores Opened Atom by Atom.

    PubMed

    Feng, J; Liu, K; Graf, M; Lihter, M; Bulushev, R D; Dumcenco, D; Alexander, D T L; Krasnozhon, D; Vuletic, T; Kis, A; Radenovic, A

    2015-05-13

    Ultrathin nanopore membranes based on 2D materials have demonstrated ultimate resolution toward DNA sequencing. Among them, molybdenum disulfide (MoS2) shows long-term stability as well as superior sensitivity enabling high throughput performance. The traditional method of fabricating nanopores with nanometer precision is based on the use of focused electron beams in transmission electron microscope (TEM). This nanopore fabrication process is time-consuming, expensive, not scalable, and hard to control below 1 nm. Here, we exploited the electrochemical activity of MoS2 and developed a convenient and scalable method to controllably make nanopores in single-layer MoS2 with subnanometer precision using electrochemical reaction (ECR). The electrochemical reaction on the surface of single-layer MoS2 is initiated at the location of defects or single atom vacancy, followed by the successive removals of individual atoms or unit cells from single-layer MoS2 lattice and finally formation of a nanopore. Step-like features in the ionic current through the growing nanopore provide direct feedback on the nanopore size inferred from a widely used conductance vs pore size model. Furthermore, DNA translocations can be detected in situ when as-fabricated MoS2 nanopores are used. The atomic resolution and accessibility of this approach paves the way for mass production of nanopores in 2D membranes for potential solid-state nanopore sequencing. PMID:25928894

  11. Large area space solar cell assemblies

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Nowlan, M. J.

    1982-01-01

    Development of a large area space solar cell assembly is presented. The assembly consists of an ion implanted silicon cell and glass cover. The important attributes of fabrication are (1) use of a back surface field which is compatible with a back surface reflector, and (2) integration of coverglass application and call fabrication.

  12. The Large Area Crop Inventory Experiment (LACIE)

    NASA Technical Reports Server (NTRS)

    Macdonald, R. B.

    1976-01-01

    A Large Area Crop Inventory Experiment (LACIE) was undertaken to prove out an economically important application of remote sensing from space. The experiment focused upon determination of wheat acreages in the U.S. Great Plains and upon the development and testing of yield models. The results and conclusions are presented.

  13. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H{sub 2}/Ar at 400 °C, the as-grown α−Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  14. Catalytically active single-atom niobium in graphitic layers.

    PubMed

    Zhang, Xuefeng; Guo, Junjie; Guan, Pengfei; Liu, Chunjing; Huang, Hao; Xue, Fanghong; Dong, Xinglong; Pennycook, Stephen J; Chisholm, Matthew F

    2013-01-01

    Carbides of groups IV through VI (Ti, V and Cr groups) have long been proposed as substitutes for noble metal-based electrocatalysts in polymer electrolyte fuel cells. However, their catalytic activity has been extremely limited because of the low density and stability of catalytically active sites. Here we report the excellent performance of a niobium-carbon structure for catalysing the cathodic oxygen reduction reaction. A large number of single niobium atoms and ultra small clusters trapped in graphitic layers are directly identified using state-of-the-art aberration-corrected scanning transmission electron microscopy. This structure not only enhances the overall conductivity for accelerating the exchange of ions and electrons, but it suppresses the chemical/thermal coarsening of the active particles. Experimental results coupled with theory calculations reveal that the single niobium atoms incorporated within the graphitic layers produce a redistribution of d-band electrons and become surprisingly active for O2 adsorption and dissociation, and also exhibit high stability. PMID:23715283

  15. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    SciTech Connect

    Murakami, Katsuhisa Hiyama, Takaki; Kuwajima, Tomoya; Fujita, Jun-ichi; Tanaka, Shunsuke; Hirukawa, Ayaka; Kano, Emi; Takeguchi, Masaki

    2015-03-02

    A single layer of graphene with dimensions of 20 mm × 20 mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm.

  16. High {Tc} trilayer tunneling and Josephson junction structures made using atomic layer by layer growth

    SciTech Connect

    Eckstein, J.N.; Bozovic, I.; Virshup, G.F.

    1994-12-31

    Very precise artificial structuring of high {Tc} heterostructures is possible using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Cuprates are combined with other oxides, such as titanates, to make atomically precise heterostructures for studying transport and interfacial effects. Titanate slabs as thin as one unit cell thick can be grown without pinholes and provide tunneling barriers for c-axis transport. Single doped unit cells of BSCCO-2212 can also be used as barriers. These give SNS Josephson junctions at temperatures as high as 65 K. Since the crystallographic structure of the barrier is identical to the structure of the 2212 electrode material, it is easily possible to stack more than junction in close proximity. This results in phase-locked operation of two junctions together.

  17. Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

    SciTech Connect

    Kim, Jong Kyu; Cho, Sung Il; Lee, Sung Ho; Kim, Chan Kyu; Min, Kyung Suk; Kang, Seung Hyun; Yeom, Geun Young

    2013-11-15

    Silicon atomic layer etching (ALET) using Cl{sub 2} is applied to remove the damaged layer on a 30 nm contact silicon surface formed by high-energy reactive ions during high aspect ratio contact etching, and its effects on the damage removal characteristics are investigated. Compared to a conventional damage removal method, such as the low-power CF{sub 4} plasma treatment technique, ALET produces less secondary damage to the substrate and gives exact etch depth control and extremely high etch selectivity to the contact SiO{sub 2} insulating pattern mold. When ALET is applied after a conventional damage removal technique, the sheet resistance of the damaged contact silicon surface is improved to a level close to that of a clean silicon surface, while exact atomic-scale depth control is maintained without changes in the pattern mold profile.

  18. Self-limiting layer-by-layer oxidation of atomically thin WSe2.

    PubMed

    Yamamoto, Mahito; Dutta, Sudipta; Aikawa, Shinya; Nakaharai, Shu; Wakabayashi, Katsunori; Fuhrer, Michael S; Ueno, Keiji; Tsukagoshi, Kazuhito

    2015-03-11

    Growth of a uniform oxide film with a tunable thickness on two-dimensional transition metal dichalcogenides is of great importance for electronic and optoelectronic applications. Here we demonstrate homogeneous surface oxidation of atomically thin WSe2 with a self-limiting thickness from single- to trilayers. Exposure to ozone (O3) below 100 °C leads to the lateral growth of tungsten oxide selectively along selenium zigzag-edge orientations on WSe2. With further O3 exposure, the oxide regions coalesce and oxidation terminates leaving a uniform thickness oxide film on top of unoxidized WSe2. At higher temperatures, oxidation evolves in the layer-by-layer regime up to trilayers. The oxide films formed on WSe2 are nearly atomically flat. Using photoluminescence and Raman spectroscopy, we find that the underlying single-layer WSe2 is decoupled from the top oxide but hole-doped. Our findings offer a new strategy for creating atomically thin heterostructures of semiconductors and insulating oxides with potential for applications in electronic devices. PMID:25646637

  19. Enhanced Breakdown Reliability and Spatial Uniformity of Atomic Layer Deposited High-k Gate Dielectrics on Graphene via Organic Seeding Layers

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Filippone, Stephen; Karmel, Hunter; Johns, James; Alaboson, Justice; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark

    2013-03-01

    Ultra-thin high- κ top-gate dielectrics are essential for high-speed graphene-based nanoelectronic circuits. Motivated by the need for high reliability and spatial uniformity, we report here the first statistical analysis of the breakdown characteristics of dielectrics grown on graphene. Based on these measurements, a rational approach is devised that simultaneously optimizes the gate capacitance and the key parameters of large-area uniformity and dielectric strength. In particular, vertically heterogeneous oxide stacks grown via atomic-layer deposition (ALD) seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) organic monolayer result in improved reliability (Weibull shape parameter β > 25) compared to the control dielectric directly grown on graphene without PTCDA (β < 1). The optimized sample also showed a large breakdown strength (Weibull scale parameter, EBD > 7 MV/cm) that is comparable to that of the control dielectric grown on Si substrates.

  20. GLAST Large Area Telescope Multiwavelength Planning

    SciTech Connect

    Reimer, O.; Michelson, P.F.; Cameron, R.A.; Digel, S.W.; Thompson, D.J.; Wood, K.S.

    2007-01-03

    Gamma-ray astrophysics depends in many ways on multiwavelength studies. The Gamma-ray Large Area Space Telescope (GLAST) Large Area Telescope (LAT) Collaboration has started multiwavelength planning well before the scheduled 2007 launch of the observatory. Some of the high-priority multiwavelength needs include: (1) availability of contemporaneous radio and X-ray timing of pulsars; (2) expansion of blazar catalogs, including redshift measurements; (3) improved observations of molecular clouds, especially at high galactic latitudes; (4) simultaneous broad-band blazar monitoring; (5) characterization of gamma-ray transients, including gamma ray bursts; (6) radio, optical, X-ray and TeV counterpart searches for reliable and effective sources identification and characterization. Several of these activities are needed to be in place before launch.

  1. GLAST Large Area Telescope Multiwavelength Planning

    NASA Technical Reports Server (NTRS)

    Reimer, O.; Michelson, P. F.; Cameron, R. A.; Digel, S. W.; Thompson, D. J.; Wood, K. S.

    2007-01-01

    Gamma-ray astrophysics depends in many ways on multiwavelength studies. The Gamma-ray Large Area Space Telescope (GLAST) Large Area Telescope (LAT) Collaboration has started multiwavelength planning well before the scheduled 2007 launch of the observatory. Some of the high-priority multiwavelength needs include: (1) availability of contemporaneous radio and X-ray timing of pulsars; (2) expansion of blazar catalogs, including redshift measurements; (3) improved observations of molecular clouds, especially at high galactic latitudes; (4) simultaneous broad-spectrum blazar monitoring; (5) characterization of gamma-ray transients, including gamma ray bursts; (6) radio, optical, X-ray and TeV counterpart searches for reliable and effective sources identification and characterization. Several of these activities are needed to be in place before launch.

  2. GLAST Large Area Telescope Multiwavelength Planning

    NASA Technical Reports Server (NTRS)

    Thompson, D. J.; Cameron, R. A.; Digel, S. W.; Wood, K. S.

    2006-01-01

    Because gamma-ray astrophysics depends in many ways on multiwavelength studies, the GLAST Large Area Telescope (LAT) Collaboration has started multiwavelength planning well before the scheduled 2007 launch of the observatory. Some of the high-priority needs include: (1) radio and X-ray timing of pulsars; (2) expansion of blazar catalogs, including redshift measurements (3) improved observations of molecular clouds, especially at high galactic latitudes; (4) simultaneous broad-spectrum blazar flare measurements; (5) characterization of gamma-ray transients, including gamma ray bursts; (6) radio, optical, X-ray and TeV counterpart searches for unidentified gamma-ray sources. Work on the first three of these activities is needed before launch. The GLAST Large Area Telescope is an international effort, with U.S. funding provided by the Department of Energy and NASA.

  3. Large area damage testing of optics

    SciTech Connect

    Sheehan, L.; Kozlowski, M.; Stolz, C.

    1996-04-26

    The damage threshold specifications for the National Ignition Facility will include a mixture of standard small-area tests and new large-area tests. During our studies of laser damage and conditioning processes of various materials we have found that some damage morphologies are fairly small and this damage does not grow with further illumination. This type of damage might not be detrimental to the laser performance. We should therefore assume that some damage can be allowed on the optics, but decide on a maximum damage allowance of damage. A new specification of damage threshold termed {open_quotes}functional damage threshold{close_quotes} was derived. Further correlation of damage size and type to system performance must be determined in order to use this measurement, but it is clear that it will be a large factor in the optics performance specifications. Large-area tests have verified that small-area testing is not always sufficient when the optic in question has defect-initiated damage. This was evident for example on sputtered polarizer and mirror coatings where the defect density was low enough that the features could be missed by standard small- area testing. For some materials, the scale-length at which damage non-uniformities occur will effect the comparison of small-area and large-area tests. An example of this was the sub-aperture tests on KD*P crystals on the Beamlet test station. The tests verified the large-area damage threshold to be similar to that found when testing a small-area. Implying that for this KD*P material, the dominate damage mechanism is of sufficiently small scale-length that small-area testing is capable of determining the threshold. The Beamlet test station experiments also demonstrated the use of on-line laser conditioning to increase the crystals damage threshold.

  4. Large-area thin-film modules

    NASA Technical Reports Server (NTRS)

    Tyan, Y. S.; Perez-Albuerne, E. A.

    1985-01-01

    The low cost potential of thin film solar cells can only be fully realized if large area modules can be made economically with good production yields. This paper deals with two of the critical challenges. A scheme is presented which allows the simple, economical realization of the long recognized, preferred module structure of monolithic integration. Another scheme reduces the impact of shorting defects and, as a result, increases the production yields. Analytical results demonstrating the utilization and advantages of such schemes are discussed.

  5. Damage evaluation in graphene underlying atomic layer deposition dielectrics

    PubMed Central

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

    2015-01-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

  6. Damage evaluation in graphene underlying atomic layer deposition dielectrics.

    PubMed

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A

    2015-01-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

  7. Nanolithography on thin layers of PMMA using atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Martín, Cristina; Rius, Gemma; Borrisé, Xavier; Pérez-Murano, Francesc

    2005-08-01

    A new technique for producing nanometre scale patterns on thin layers (<30 nm thick) of PMMA on silicon is described. The method consists of inducing the local modification of the PMMA by applying a positive voltage between the silicon and an atomic force microscope (AFM) tip. At voltages larger than 28 V, it is observed that a hole is directly produced on the PMMA. The silicon surface is simultaneously oxidized even in the case where a hole has not been created. Monitoring of the electrical current through the AFM tip during the application of the voltage allows elucidating the mechanism of the PMMA removal. The process is used to define nanometre scale electrodes by combining the AFM lithography with electron beam lithography, metal deposition and lift-off processes.

  8. Electrocatalysts by atomic layer deposition for fuel cell applications

    DOE PAGESBeta

    Cheng, Niancai; Shao, Yuyan; Liu, Jun; Sun, Xueliang

    2016-01-22

    Here, fuel cells are a promising technology solution for reliable and clean energy because they offer high energy conversion efficiency and low emission of pollutants. However, high cost and insufficient durability are considerable challenges for widespread adoption of polymer electrolyte membrane fuel cells (PEMFCs) in practical applications. Current PEMFCs catalysts have been identified as major contributors to both the high cost and limited durability. Atomic layer deposition (ALD) is emerging as a powerful technique for solving these problems due to its exclusive advantages over other methods. In this review, we summarize recent developments of ALD in PEMFCs with a focusmore » on design of materials for improved catalyst activity and durability. New research directions and future trends have also been discussed.« less

  9. Highly reflective polymeric substrates functionalized utilizing atomic layer deposition

    SciTech Connect

    Zuzuarregui, Ana Gregorczyk, Keith E.; Coto, Borja; Ruiz de Gopegui, Unai; Barriga, Javier; Rodríguez, Jorge; Knez, Mato

    2015-08-10

    Reflective surfaces are one of the key elements of solar plants to concentrate energy in the receivers of solar thermal electricity plants. Polymeric substrates are being considered as an alternative to the widely used glass mirrors due to their intrinsic and processing advantages, but optimizing both the reflectance and the physical stability of polymeric mirrors still poses technological difficulties. In this work, polymeric surfaces have been functionalized with ceramic thin-films by atomic layer deposition. The characterization and optimization of the parameters involved in the process resulted in surfaces with a reflection index of 97%, turning polymers into a real alternative to glass substrates. The solution we present here can be easily applied in further technological areas where seemingly incompatible combinations of polymeric substrates and ceramic coatings occur.

  10. Atomic layer deposition overcoating: tuning catalyst selectivity for biomass conversion.

    PubMed

    Zhang, Hongbo; Gu, Xiang-Kui; Canlas, Christian; Kropf, A Jeremy; Aich, Payoli; Greeley, Jeffrey P; Elam, Jeffrey W; Meyers, Randall J; Dumesic, James A; Stair, Peter C; Marshall, Christopher L

    2014-11-01

    The terraces, edges, and facets of nanoparticles are all active sites for heterogeneous catalysis. These different active sites may cause the formation of various products during the catalytic reaction. Here we report that the step sites of Pd nanoparticles (NPs) can be covered precisely by the atomic layer deposition (ALD) method, whereas the terrace sites remain as active component for the hydrogenation of furfural. Increasing the thickness of the ALD-generated overcoats restricts the adsorption of furfural onto the step sites of Pd NPs and increases the selectivity to furan. Furan selectivities and furfural conversions are linearly correlated for samples with or without an overcoating, though the slopes differ. The ALD technique can tune the selectivity of furfural hydrogenation over Pd NPs and has improved our understanding of the reaction mechanism. The above conclusions are further supported by density functional theory (DFT) calculations. PMID:25251418

  11. Oxygen-free atomic layer deposition of indium sulfide

    DOEpatents

    Martinson, Alex B.; Hock, Adam S.; McCarthy, Robert; Weimer, Matthew S.

    2016-07-05

    A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.

  12. Influence of PEDOT:PSS on the effectiveness of barrier layers prepared by atomic layer deposition in organic light emitting diodes

    SciTech Connect

    Wegler, Barbara; Schmidt, Oliver; Hensel, Bernhard

    2015-01-15

    Organic light emitting diodes (OLEDs) are well suited for energy saving lighting applications, especially when thinking about highly flexible and large area devices. In order to avoid the degradation of the organic components by water and oxygen, OLEDs need to be encapsulated, e.g., by a thin sheet of glass. As the device is then no longer flexible, alternative coatings are required. Atomic layer deposition (ALD) is a very promising approach in this respect. The authors studied OLEDs that were encapsulated by 100 nm Al{sub 2}O{sub 3} deposited by ALD. The authors show that this coating effectively protects the active surface area of the OLEDs from humidity. However, secondary degradation processes still occur at sharp edges of the OLED stack where the extremely thin encapsulation layer does not provide perfect coverage. Particularly, the swelling of poly(3,4-ethylenedioxythiophene) mixed with poly(styrenesulfonate), which is a popular choice for the planarization of the bottom electrode and at the same time acts as a hole injection layer, affects the effectiveness of the encapsulation layer.

  13. Realization of Large-Area Wrinkle-Free Monolayer Graphene Films Transferred to Functional Substrates

    PubMed Central

    Park, Byeong-Ju; Choi, Jin-Seok; Kim, Hyun-Suk; Kim, Hyun-You; Jeong, Jong-Ryul; Choi, Hyung-Jin; Jung, Hyun-June; Jung, Min-Wook; An, Ki-Seok; Yoon, Soon-Gil

    2015-01-01

    Structural inhomogeneities, such as the wrinkles and ripples within a graphene film after transferring the free-standing graphene layer to a functional substrate, degrade the physical and electrical properties of the corresponding electronic devices. Here, we introduced titanium as a superior adhesion layer for fabricating wrinkle-free graphene films that is highly applicable to flexible and transparent electronic devices. The Ti layer does not influence the electronic performance of the functional substrates. Experimental and theoretical investigations confirm that the strong chemical interactions between Ti and any oxygen atoms unintentionally introduced on/within the graphene are responsible for forming the clean, defect-free graphene layer. Our results accelerate the practical application of graphene-related electronic devices with enhanced functionality. The large-area monolayer graphenes were prepared by a simple attachment of the Ti layer with the multi-layer wrinkle-free graphene films. For the first time, the graphene films were addressed for applications of superior bottom electrode for flexible capacitors instead of the novel metals. PMID:26043868

  14. Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials.

    PubMed

    Stefik, Morgan

    2016-07-01

    The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4 . A selective etching process was used with vanadium-rich depositions to enable the synthesis of phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode using a hole-scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting. PMID:27246652

  15. Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Bakke, Jonathan R.; Pickrahn, Katie L.; Brennan, Thomas P.; Bent, Stacey F.

    2011-09-01

    Investment into photovoltaic (PV) research has accelerated over the past decade as concerns over energy security and carbon emissions have increased. The types of PV technology in which the research community is actively engaged are expanding as well. This review focuses on the burgeoning field of atomic layer deposition (ALD) for photovoltaics. ALD is a self-limiting thin film deposition technique that has demonstrated usefulness in virtually every sector of PV technology including silicon, thin film, tandem, organic, dye-sensitized, and next generation solar cells. Further, the specific applications are not limited. ALD films have been deposited on planar and nanostructured substrates and on inorganic and organic devices, and vary in thickness from a couple of angstroms to over 100 nm. The uses encompass absorber materials, buffer layers, passivating films, anti-recombination shells, and electrode modifiers. Within the last few years, the interest in ALD as a PV manufacturing technique has increased and the functions of ALD have expanded. ALD applications have yielded fundamental understanding of how devices operate and have led to increased efficiencies or to unique architectures for some technologies. This review also highlights new developments in high throughput ALD, which is necessary for commercialization. As the demands placed on materials for the next generation of PV become increasingly stringent, ALD will evolve into an even more important method for research and fabrication of solar cell devices.

  16. Mechanical reinforcement of nanoparticle thin films using atomic layer deposition.

    PubMed

    Dafinone, Majemite I; Feng, Gang; Brugarolas, Teresa; Tettey, Kwadwo E; Lee, Daeyeon

    2011-06-28

    Thin films composed of nanoparticles exhibit synergistic properties, making them useful for numerous advanced applications. Nanoparticle thin films (NTFs), however, have a very low resistance to mechanical loading and abrasion, presenting a major bottleneck to their widespread use and commercialization. High-temperature sintering has been shown to improve the mechanical durability of NTFs on inorganic substrates; however, these high-temperature processes are not amenable to organic substrates. In this study, we demonstrate that the mechanical durability of TiO(2)/SiO(2) nanoparticle layer-by-layer (LbL) films on glass and polycarbonate substrates can be drastically improved using atomic layer deposition (ALD) at a relatively low temperature. The structure and physical properties of ALD-treated TiO(2)/SiO(2) nanoparticle LbL films are studied using spectroscopic ellipsometry, UV-vis spectroscopy, contact angle measurements, and nanoindentation. The composition of TiO(2)/SiO(2) LbL films as a function of ALD-cycle number is determined through solution ellipsometry, enabling the determination of the characteristic pore size of nanoparticle thin films. Mechanical durability is also investigated by abrasion tests, showing that the robustness of ALD-treated nanoparticle films is comparable to that of thermally calcined films. More importantly, ALD-treated nanoparticle films retain the original functionality of the TiO(2)/SiO(2) LbL films, such as superhydrophilicity and antireflection properties, demonstrating the utility of ALD as a reinforcement method for nanoparticle thin films. PMID:21557541

  17. Excimer lasers drive large-area microprocessing

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph; Tapié, Jean-Luc

    2012-09-01

    Excimer lasers emitting in the UV to far UV region are by nature the laser sources enabling the highest optical resolution and strongest material-photon interaction. At the same time, excimer lasers deliver unmatched UV pulse energies and output powers up to the kilowatt range. Thus, they are the key to fast and effective large area processing of smallest structures with micron precision. As a consequence, excimer lasers are the UV technology of choice when it comes to high-performance microstructuring with unsurpassed quality and process repeatability in applications such as drilling advanced ink jet nozzles or patterning biomedical sensor structures.

  18. Large Area X-Ray Spectroscopy Mission

    NASA Technical Reports Server (NTRS)

    Tananbaum, H.

    1997-01-01

    The Large Area X-ray Spectroscopy (LAXS) mission concept study continues to evolve strongly following the merging of the LAXS mission with the Next Generation X-ray Observatory (NGXO, PI: Nick White) into the re-named High Throughput X-ray Spectroscopy (HTXS) Mission. HTXS retains key elements of the LAXS proposal, including the use of multiple satellites for risk-reduction and cost savings. A key achievement of the program has been the recommendation by the Structure and Evolution of the Universe (SEUS) (April 1997) for a new start for the HTXS mission in the 2000-2004 timeframe.

  19. Large area cold plasma applicator for decontamination

    NASA Astrophysics Data System (ADS)

    Konesky, G. A.

    2008-04-01

    Cold plasma applicators have been used in the Medical community for several years for uses ranging from hemostasis ("stop bleeding") to tumor removal. An added benefit of this technology is enhanced wound healing by the destruction of infectious microbial agents without damaging healthy tissue. The beam is typically one millimeter to less than a centimeter in diameter. This technology has been adapted and expanded to large area applicators of potentially a square meter or more. Decontamination applications include both biological and chemical agents, and assisting in the removal of radiological agents, with minimal or no damage to the contaminated substrate material. Linear and planar multiemitter array plasma applicator design and operation is discussed.

  20. Direct atomic-scale observation of layer-by-layer oxide growth during magnesium oxidation

    SciTech Connect

    Zheng, He; Wu, Shujing; Sheng, Huaping; Liu, Chun; Liu, Yu; Cao, Fan; Zhou, Zhichao; Zhao, Dongshan E-mail: dszhao@whu.edu.cn; Wang, Jianbo E-mail: dszhao@whu.edu.cn; Zhao, Xingzhong

    2014-04-07

    The atomic-scale oxide growth dynamics are directly revealed by in situ high resolution transmission electron microscopy during the oxidation of Mg surface. The oxidation process is characterized by the layer-by-layer growth of magnesium oxide (MgO) nanocrystal via the adatom process. Consistently, the nucleated MgO crystals exhibit faceted surface morphology as enclosed by (200) lattice planes. It is believed that the relatively lower surface energies of (200) lattice planes should play important roles, governing the growth mechanism. These results facilitate the understanding of the nanoscale oxide growth mechanism that will have an important impact on the development of magnesium or magnesium alloys with improved resistance to oxidation.

  1. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    SciTech Connect

    Hoye, Robert L. Z. E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L. E-mail: jld35@cam.ac.uk; Muñoz-Rojas, David; Nelson, Shelby F.; Illiberi, Andrea; Poodt, Paul

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  2. GLAST Large Area Telescope Multiwavelength Opportunities

    NASA Technical Reports Server (NTRS)

    Thompson, David

    2008-01-01

    The Gamma-ray Large Area Space Telescope (GLAST) is scheduled for launch this year. Because the GLAST Large Area Telescope (LAT) has a huge field of view and the GLAST Observatory will be operated in scanning mode, it will survey the entire sky daily. The GLAST Mission and the LAT Collaboration invite cooperative efforts from theorists and observers at all wavelengths to help optimize the science. Possible topics include: (1) Blazars: These Active Galactic Nuclei are expected to be a major source class for LAT. Identifying new blazars, monitoring their variability, and joining programs to carry out planned or Target of Opportunity multiwavelength campaigns will all be important activities. The study of AGN gamma-ray jets can help link the accretion processes close to the black hole with the large-scale interaction of the AGN with its environment. (2) Unidentified Gamma-ray Sources: Modeling of possible gamma-ray sources is important to establish testable hypotheses. New gamma-ray sources need first to be identified with known objects by position, spectrum, or time variability, and then multiwavelength studies can be used to explore the astrophysical implications of high-energy radiation from these sources. The LAT team is committed to releasing a preliminary source list about six months after the start of science operations.

  3. Nanoscale engineering materials by supercritical fluid and atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Peng, Qing

    With the development of material science and technology, modification of substrates, which have random geometry and high aspect ratio three dimensional (3D) complex structures, with desired functional, reactive and stable coatings becomes important and challenging. The ability to fabricate mono- or multi-layers of functional materials with precisely controlled dimensions, finely tuned composition and molecular structures, attracts significant interests in materials science and is the key to construct such devices and structures at nano- and micro-scale with desired properties. In this study, supercritical carbon dioxide (scCO2) has been studied as an alternative route for modifying substrates due to the unique gas-like (low viscosity, high diffusivity and zero surface tension) and liquid-like properties (high density). (1) The reaction kinetics of metal oxides thin film deposition from pyrolysis of metal organics in scCO2 was studied in detail. This method was demonstrated as a powerful technique to coat oxides, including Al2O3, Ga2O3 and others, into 3D high aspect ratio complex structure of carbon nanotubes (CNTs) forest. (2) The low temperature scCO 2 based hydrogenolysis process was developed as a useful way to functionalize aligned CNTs forest with dense Nickel nanoparticles. On the second part of this work, atomic layer deposition (ALD)/molecular layer deposition (MLD), as a vapor phase, stepwise and self-limiting vacuum based deposition process, was demonstrated as a powerful way to form highly conformal and uniform film onto substrates, even into highly complex 3D complex structures. In this study, (4) Metal oxide ALD is applied onto 3D electrospun polymer microfiber mats template to illustrate an effective and robust strategy to fabricate long and uniform metal oxide microtubes with precisely controllable wall thickness. Designer tubes of various sizes and different materials were demonstrated by using this method. (5) By further extending this technique

  4. Plasma Enhanced Atomic Layer Deposition of Cooper Seed Layers at Low Process Temperatures

    NASA Astrophysics Data System (ADS)

    Mao, Jiajun

    In conventional Cu interconnect fabrication, a sputtered copper seed layer is deposited before the electrochemically deposited (ECD) copper plating step. However, as interconnect dimensions scale down, non-conformal seed layer growth and subsequent voiding of metallized structures is becoming a critical issue. With its established excellent thickness controllability and film conformality, atomic layer deposition (ALD) is becoming an attractive deposition approach for the sub-24nm fabrication regime. However, in order to achieve a smooth and continuous seed layer deposition, a low process temperature (below 100°C) is needed, given the tendency of Cu agglomeration at elevated temperature. In this research, plasma enhanced ALD (PEALD) Cu processes at low process temperature are developed using two novel precursors: Cuprum and AbaCus. The volatility and thermal stability of these two precursors are presented. Self-limiting nature of the PEALD processes are demonstrated. Key film properties including purity, resistivity, conformality, adhesion and platability are evaluated using multiple characterization techniques. In addition, film nucleation and growth of PEALD Cu at room temperature on different liner materials are studied. Via structures are employed for the investigation of film continuity on side walls. It is also shown that film conformality and platability can be improved by over saturating the plasma reactions.

  5. CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

    PubMed Central

    Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

    2014-01-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  6. CMUTs with high-K atomic layer deposition dielectric material insulation layer.

    PubMed

    Xu, Toby; Tekes, Coskun; Degertekin, F

    2014-12-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  7. Characteristics of Spontaneous Emission of Polarized Atoms in Metal Dielectric Multiple Layer Structures

    NASA Astrophysics Data System (ADS)

    Zhao, Li-Ming; Gu, Ben-Yuan; Zhou, Yun-Song

    2007-11-01

    The spontaneous emission (SE) progress of polarized atoms in a stratified structure of air-dielectric(D0)-metal(M)-dielectric(D1)-air can be controlled effectively by changing the thickness of the D1 layer and rotating the polarized direction of atoms. It is found that the normalized SE rate of atoms located inside the D0 layer crucially depends on the atomic position and the thickness of the D1 layer. When the atom is located near the D0-M interface, the normalized atomic SE rate as a function of the atomic position is abruptly onset for the thin D1 layer. However, with the increasing thickness of the D1 layer, the corresponding curve profile exhibits plateau and stays nearly unchanged. The substantial change of the SE rate stems from the excitation of the surface plasmon polaritons in metal-dielectric interface, and the feature crucially depends on the thickness of D1 layer. If atoms are positioned near the D0-air interface, the substantial variation of the normalized SE rate appears when rotating the polarized direction of atoms. These findings manifest that the atomic SE processes can be flexibly controlled by altering the thickness of the dielectric layer D1 or rotating the orientation of the polarization of atoms.

  8. Ultra-thin Materials from Atomic Layer Deposition for Microbolometers

    NASA Astrophysics Data System (ADS)

    Eigenfeld, Nathan Thomas

    This research focuses on the incorporation of atomic layer deposition (ALD) materials into microbolometer devices for infrared (IR) imaging. Microbolometers are suspended micro-electromechanical (MEMS) devices, which respond electrically to absorbed IR radiation. By minimizing the heat capacity (thermal mass) of these devices, their performance may be substantially improved. Thus, implementing ultra-thin freestanding ALD materials into microbolometer devices will offer a substantial reduction in the overall heat capacity of the device. A novel nanofabrication method is developed to produce robust ultra-thin suspended structures from ALD generated materials including W, Ru and Al2O 3. Unique aspects of ALD such as high conformality offer the ability to create 3-dimensional structures with mechanical reinforcement. Additionally, the ability to tune residual stresses via atomically precise thickness control enables the fabrication of flat suspended structures. Since microbolometer elements are electro-thermally active, the electro-thermal properties of ultra-thin ALD W, Ru and Al2O3 are investigated. Several distinct deviations from bulk electro-thermal properties of resistivity, temperature coefficient of resistance, thermal conductivity and specific heat capacity are identified and interpreted with traditional nanoscale transport modeling and theory. For example, for ALD W, the electrical resistivity is increased by up to 99%, thermal conductivity is reduced by up to 91% and specific heat capacity increased 70% from bulk. Finally, the developed ALD nano-fabrication process and measured ALD material properties are combined to fabricate an industrial level, state-of-the-art microbolometer pixel structure with 1.4X performance improvement. Further microbolomter performance enhancements based on the developed nanofabrication methods and electro-thermal measurements are discussed.

  9. Layer by layer removal of Au atoms from passivated Au(111) surfaces using the scanning tunneling microscope: Nanoscale ``paint stripping''

    NASA Astrophysics Data System (ADS)

    Keel, J. M.; Yin, J.; Guo, Q.; Palmer, R. E.

    2002-04-01

    Layer by layer removal of gold atoms from the (111) surface of gold has been performed using the scanning tunneling microscope. The process is made possible by a chemisorbed self-assembled monolayer (SAM) of dodecanethiol molecules on the surface, which gives rise to a reduced bonding strength between the top two layers of gold atoms. The gold atoms and associated adsorbed molecules are peeled off and displaced laterally by the STM tip, and the size of the modified area (down to ˜10×10 nm) is more or less determined by the scan size.

  10. Gyroidal mesoporous multifunctional nanocomposites via atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Werner, Jörg G.; Scherer, Maik R. J.; Steiner, Ullrich; Wiesner, Ulrich

    2014-07-01

    We demonstrate the preparation of rationally designed, multifunctional, monolithic and periodically ordered mesoporous core-shell nanocomposites with tunable structural characteristics. Three-dimensionally (3D) co-continuous gyroidal mesoporous polymer monoliths are fabricated from a solution-based triblock terpolymer-resol co-assembly and used as the functional templates for the fabrication of free-standing core-shell carbon-titania composites using atomic layer deposition (ALD). The deposition depth into the torturous gyroidal nanonetwork is investigated as a function of ALD conditions and the resulting composites are submitted to different thermal treatments. Results suggest that ALD can homogenously coat mesoporous templates with well defined pore sizes below 50 nm and thicknesses above 10 μm. Structural tunability like titania shell thickness and pore size control is demonstrated. The ordered nanocomposites exhibit triple functionality; a 3D continuous conductive carbon core that is coated with a crystalline titania shell that in turn is in contact with a 3D continuous mesopore network in a compact monolithic architecture. This materials design is of interest for applications including energy conversion and storage. Gyroidal mesoporous titania monoliths can be obtained through simultaneous titania crystallization and template removal in air.We demonstrate the preparation of rationally designed, multifunctional, monolithic and periodically ordered mesoporous core-shell nanocomposites with tunable structural characteristics. Three-dimensionally (3D) co-continuous gyroidal mesoporous polymer monoliths are fabricated from a solution-based triblock terpolymer-resol co-assembly and used as the functional templates for the fabrication of free-standing core-shell carbon-titania composites using atomic layer deposition (ALD). The deposition depth into the torturous gyroidal nanonetwork is investigated as a function of ALD conditions and the resulting composites are

  11. Electronic hybridization of large-area stacked graphene films.

    PubMed

    Robinson, Jeremy T; Schmucker, Scott W; Diaconescu, C Bogdan; Long, James P; Culbertson, James C; Ohta, Taisuke; Friedman, Adam L; Beechem, Thomas E

    2013-01-22

    Direct, tunable coupling between individually assembled graphene layers is a next step toward designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the fabrication and characterization of large-area (>cm(2)), coupled bilayer graphene on SiO(2)/Si substrates. Stacking two graphene films leads to direct electronic interactions between layers, where the resulting film properties are determined by the local twist angle. Polycrystalline bilayer films have a "stained-glass window" appearance explained by the emergence of a narrow absorption band in the visible spectrum that depends on twist angle. Direct measurement of layer orientation via electron diffraction, together with Raman and optical spectroscopy, confirms the persistence of clean interfaces over large areas. Finally, we demonstrate that interlayer coupling can be reversibly turned off through chemical modification, enabling optical-based chemical detection schemes. Together, these results suggest that 2D crystals can be individually assembled to form electronically coupled systems suitable for large-scale applications. PMID:23240977

  12. Enhanced light extraction of scintillator using large-area photonic crystal structures fabricated by soft-X-ray interference lithography

    SciTech Connect

    Zhu, Zhichao; Wu, Shuang; Liu, Bo Cheng, Chuanwei; Gu, Mu; Chen, Hong; Xue, Chaofan; Zhao, Jun; Wang, Liansheng; Wu, Yanqing; Tai, Renzhong

    2015-06-15

    Soft-X-ray interference lithography is utilized in combination with atomic layer deposition to prepare photonic crystal structures on the surface of Bi{sub 4}Ge{sub 3}O{sub 12} (BGO) scintillator in order to extract the light otherwise trapped in the internal of scintillator due to total internal reflection. An enhancement with wavelength- and emergence angle-integration by 95.1% has been achieved. This method is advantageous to fabricate photonic crystal structures with large-area and high-index-contrast which enable a high-efficient coupling of evanescent field and the photonic crystal structures. Generally, the method demonstrated in this work is also suitable for many other light emitting devices where a large-area is required in the practical applications.

  13. The Large Area Pulsed Solar Simulator (LAPSS)

    NASA Technical Reports Server (NTRS)

    Mueller, R. L.

    1993-01-01

    A Large Area Pulsed Solar Simulator (LAPSS) has been installed at JPL. It is primarily intended to be used to illuminate and measure the electrical performance of photovoltaic devices. The simulator, originally manufactured by Spectrolab, Sylmar, California, occupies an area measuring about 3 meters wide by 12 meters long. The data acquisition and data processing subsystems have been modernized. Tests on the LAPSS performance resulted in better than +/- 2 percent uniformity of irradiance at the test plane and better than +/- 0.3 percent measurement repeatability after warm-up. Glass absorption filters are used to reduce the level of ultraviolet light emitted from the xenon flash lamps. This provides a close match to standard airmass zero and airmass 1.5 spectral irradiance distributions. The 2 millisecond light pulse prevents heating of the device under test, resulting in more reliable temperature measurements. Overall, excellent electrical performance measurements have been made of many different types and sizes of photovoltaic devices.

  14. Timing characteristics of Large Area Picosecond Photodetectors

    NASA Astrophysics Data System (ADS)

    Adams, B. W.; Elagin, A.; Frisch, H. J.; Obaid, R.; Oberla, E.; Vostrikov, A.; Wagner, R. G.; Wang, J.; Wetstein, M.

    2015-09-01

    The LAPPD Collaboration was formed to develop ultrafast large-area imaging photodetectors based on new methods for fabricating microchannel plates (MCPs). In this paper we characterize the time response using a pulsed, sub-picosecond laser. We observe single-photoelectron time resolutions of a 20 cm × 20 cm MCP consistently below 70 ps, spatial resolutions of roughly 500 μm, and median gains higher than 107. The RMS measured at one particular point on an LAPPD detector is 58 ps, with ± 1σ of 47 ps. The differential time resolution between the signal reaching the two ends of the delay line anode is measured to be 5.1 ps for large signals, with an asymptotic limit falling below 2 ps as noise-over-signal approaches zero.

  15. The CLAS12 large area RICH detector

    SciTech Connect

    M. Contalbrigo, E. Cisbani, P. Rossi

    2011-05-01

    A large area RICH detector is being designed for the CLAS12 spectrometer as part of the 12 GeV upgrade program of the Jefferson Lab Experimental Hall-B. This detector is intended to provide excellent hadron identification from 3 GeV/c up to momenta exceeding 8 GeV/c and to be able to work at the very high design luminosity-up to 1035 cm2 s-1. Detailed feasibility studies are presented for two types of radiators, aerogel and liquid C6F14 freon, in conjunction with a highly segmented light detector in the visible wavelength range. The basic parameters of the RICH are outlined and the resulting performances, as defined by preliminary simulation studies, are reported.

  16. Large area position sensitive β-detector

    NASA Astrophysics Data System (ADS)

    Vaintraub, S.; Hass, M.; Edri, H.; Morali, N.; Segal, T.

    2015-03-01

    A new conceptual design of a large area electron detector, which is position and energy sensitive, was developed. This detector is designed for beta decay energies up to 4 MeV, but in principle can be re-designed for higher energies. The detector incorporates one large plastic scintillator and, in general, a limited number of photomultipliers (7 presently). The current setup was designed and constructed after an extensive Geant4 simulation study. By comparison of a single hit light distribution between the various photomultipliers to a pre-measured accurate position-response map, the anticipated position resolution is around 5 mm. The first benchmark experiments have been conducted in order to calibrate and confirm the position resolution of the detector. The new method, results of the first test experiments and comparison to simulations are presented.

  17. Timing Characteristics of Large Area Picosecond Photodetectors

    SciTech Connect

    Adams, Bernhard W.; Elagin, Andrey L.; Frisch, H.; Obaid, Razib; Oberla, E; Vostrikov, Alexander; Wagner, Robert G.; Wang, Jingbo; Wetstein, Matthew J.; Northrop, R

    2015-09-21

    The LAPPD Collaboration was formed to develop ultralast large-area imaging photodetectors based on new methods for fabricating microchannel plates (MCPs). In this paper we characterize the time response using a pulsed, sub picosecond laser. We observe single photoelectron time resolutions of a 20 cm x 20 cm MCP consistently below 70 ps, spatial resolutions of roughly 500 pm, and median gains higher than 10(7). The RMS measured at one particular point on an LAPPD detector is 58 ps, with in of 47 ps. The differential time resolution between the signal reaching the two ends of the delay line anode is measured to be 5.1 ps for large signals, with an asymptotic limit falling below 2 ps as noise-over-signal approaches zero.

  18. Large Area Sputter Coating on Glass

    NASA Astrophysics Data System (ADS)

    Katayama, Yoshihito

    Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

  19. Fermi Large Area Telescope Second Source Catalog

    NASA Astrophysics Data System (ADS)

    Nolan, P. L.; Abdo, A. A.; Ackermann, M.; Ajello, M.; Allafort, A.; Antolini, E.; Atwood, W. B.; Axelsson, M.; Baldini, L.; Ballet, J.; Barbiellini, G.; Bastieri, D.; Bechtol, K.; Belfiore, A.; Bellazzini, R.; Berenji, B.; Bignami, G. F.; Blandford, R. D.; Bloom, E. D.; Bonamente, E.; Bonnell, J.; Borgland, A. W.; Bottacini, E.; Bouvier, A.; Brandt, T. J.; Bregeon, J.; Brigida, M.; Bruel, P.; Buehler, R.; Burnett, T. H.; Buson, S.; Caliandro, G. A.; Cameron, R. A.; Campana, R.; Cañadas, B.; Cannon, A.; Caraveo, P. A.; Casandjian, J. M.; Cavazzuti, E.; Ceccanti, M.; Cecchi, C.; Çelik, Ö.; Charles, E.; Chekhtman, A.; Cheung, C. C.; Chiang, J.; Chipaux, R.; Ciprini, S.; Claus, R.; Cohen-Tanugi, J.; Cominsky, L. R.; Conrad, J.; Corbet, R.; Cutini, S.; D'Ammando, F.; Davis, D. S.; de Angelis, A.; DeCesar, M. E.; DeKlotz, M.; De Luca, A.; den Hartog, P. R.; de Palma, F.; Dermer, C. D.; Digel, S. W.; Silva, E. do Couto e.; Drell, P. S.; Drlica-Wagner, A.; Dubois, R.; Dumora, D.; Enoto, T.; Escande, L.; Fabiani, D.; Falletti, L.; Favuzzi, C.; Fegan, S. J.; Ferrara, E. C.; Focke, W. B.; Fortin, P.; Frailis, M.; Fukazawa, Y.; Funk, S.; Fusco, P.; Gargano, F.; Gasparrini, D.; Gehrels, N.; Germani, S.; Giebels, B.; Giglietto, N.; Giommi, P.; Giordano, F.; Giroletti, M.; Glanzman, T.; Godfrey, G.; Grenier, I. A.; Grondin, M.-H.; Grove, J. E.; Guillemot, L.; Guiriec, S.; Gustafsson, M.; Hadasch, D.; Hanabata, Y.; Harding, A. K.; Hayashida, M.; Hays, E.; Hill, A. B.; Horan, D.; Hou, X.; Hughes, R. E.; Iafrate, G.; Itoh, R.; Jóhannesson, G.; Johnson, R. P.; Johnson, T. E.; Johnson, A. S.; Johnson, T. J.; Kamae, T.; Katagiri, H.; Kataoka, J.; Katsuta, J.; Kawai, N.; Kerr, M.; Knödlseder, J.; Kocevski, D.; Kuss, M.; Lande, J.; Landriu, D.; Latronico, L.; Lemoine-Goumard, M.; Lionetto, A. M.; Llena Garde, M.; Longo, F.; Loparco, F.; Lott, B.; Lovellette, M. N.; Lubrano, P.; Madejski, G. M.; Marelli, M.; Massaro, E.; Mazziotta, M. N.; McConville, W.; McEnery, J. E.; Mehault, J.; Michelson, P. F.; Minuti, M.; Mitthumsiri, W.; Mizuno, T.; Moiseev, A. A.; Mongelli, M.; Monte, C.; Monzani, M. E.; Morselli, A.; Moskalenko, I. V.; Murgia, S.; Nakamori, T.; Naumann-Godo, M.; Norris, J. P.; Nuss, E.; Nymark, T.; Ohno, M.; Ohsugi, T.; Okumura, A.; Omodei, N.; Orlando, E.; Ormes, J. F.; Ozaki, M.; Paneque, D.; Panetta, J. H.; Parent, D.; Perkins, J. S.; Pesce-Rollins, M.; Pierbattista, M.; Pinchera, M.; Piron, F.; Pivato, G.; Porter, T. A.; Racusin, J. L.; Rainò, S.; Rando, R.; Razzano, M.; Razzaque, S.; Reimer, A.; Reimer, O.; Reposeur, T.; Ritz, S.; Rochester, L. S.; Romani, R. W.; Roth, M.; Rousseau, R.; Ryde, F.; Sadrozinski, H. F.-W.; Salvetti, D.; Sanchez, D. A.; Saz Parkinson, P. M.; Sbarra, C.; Scargle, J. D.; Schalk, T. L.; Sgrò, C.; Shaw, M. S.; Shrader, C.; Siskind, E. J.; Smith, D. A.; Spandre, G.; Spinelli, P.; Stephens, T. E.; Strickman, M. S.; Suson, D. J.; Tajima, H.; Takahashi, H.; Takahashi, T.; Tanaka, T.; Thayer, J. G.; Thayer, J. B.; Thompson, D. J.; Tibaldo, L.; Tibolla, O.; Tinebra, F.; Tinivella, M.; Torres, D. F.; Tosti, G.; Troja, E.; Uchiyama, Y.; Vandenbroucke, J.; Van Etten, A.; Van Klaveren, B.; Vasileiou, V.; Vianello, G.; Vitale, V.; Waite, A. P.; Wallace, E.; Wang, P.; Werner, M.; Winer, B. L.; Wood, D. L.; Wood, K. S.; Wood, M.; Yang, Z.; Zimmer, S.

    2012-04-01

    We present the second catalog of high-energy γ-ray sources detected by the Large Area Telescope (LAT), the primary science instrument on the Fermi Gamma-ray Space Telescope (Fermi), derived from data taken during the first 24 months of the science phase of the mission, which began on 2008 August 4. Source detection is based on the average flux over the 24 month period. The second Fermi-LAT catalog (2FGL) includes source location regions, defined in terms of elliptical fits to the 95% confidence regions and spectral fits in terms of power-law, exponentially cutoff power-law, or log-normal forms. Also included are flux measurements in five energy bands and light curves on monthly intervals for each source. Twelve sources in the catalog are modeled as spatially extended. We provide a detailed comparison of the results from this catalog with those from the first Fermi-LAT catalog (1FGL). Although the diffuse Galactic and isotropic models used in the 2FGL analysis are improved compared to the 1FGL catalog, we attach caution flags to 162 of the sources to indicate possible confusion with residual imperfections in the diffuse model. The 2FGL catalog contains 1873 sources detected and characterized in the 100 MeV to 100 GeV range of which we consider 127 as being firmly identified and 1171 as being reliably associated with counterparts of known or likely γ-ray-producing source classes. We dedicate this paper to the memory of our colleague Patrick Nolan, who died on 2011 November 6. His career spanned much of the history of high-energy astronomy from space and his work on the Large Area Telescope (LAT) began nearly 20 years ago when it was just a concept. Pat was a central member in the operation of the LAT collaboration and he is greatly missed.

  20. Synthesis of platinum nanoparticle electrocatalysts by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lubers, Alia Marie

    Demand for energy continues to increase, and without alternatives to fossil fuel combustion the effects on our environment will become increasingly severe. Fuel cells offer a promising improvement on current methods of energy generation; they are able to convert hydrogen fuel into electricity with a theoretical efficiency of up to 83% and interface smoothly with renewable hydrogen production. Fuel cells can replace internal combustion engines in vehicles and are used in stationary applications to power homes and businesses. The efficiency of a fuel cell is maximized by its catalyst, which is often composed of platinum nanoparticles supported on carbon. Economical production of fuel cell catalysts will promote adoption of this technology. Atomic layer deposition (ALD) is a possible method for producing catalysts at a large scale when employed in a fluidized bed. ALD relies on sequential dosing of gas-phase precursors to grow a material layer by layer. We have synthesized platinum nanoparticles on a carbon particle support (Pt/C) by ALD for use in proton exchange membrane fuel cells (PEMFCs) and electrochemical hydrogen pumps. Platinum nanoparticles with different characteristics were deposited by changing two chemistries: the carbon substrate through functionalization; and the deposition process by use of either oxygen or hydrogen as ligand removing reactants. The metal depositing reactant was trimethyl(methylcyclopentadienyl)platinum(IV). Functionalizing the carbon substrate increased nucleation during deposition resulting in smaller and more dispersed nanoparticles. Use of hydrogen produced smaller nanoparticles than oxygen, due to a gentler hydrogenation reaction compared to using oxygen's destructive combustion reaction. Synthesized Pt/C materials were used as catalysts in an electrochemical hydrogen pump, a device used to separate hydrogen fuel from contaminants. Catalysts deposited by ALD on functionalized carbon using a hydrogen chemistry were the most

  1. The mechanical robustness of atomic-layer- and molecular-layer-deposited coatings on polymer substrates

    NASA Astrophysics Data System (ADS)

    Miller, David C.; Foster, Ross R.; Zhang, Yadong; Jen, Shih-Hui; Bertrand, Jacob A.; Lu, Zhixing; Seghete, Dragos; O'Patchen, Jennifer L.; Yang, Ronggui; Lee, Yung-Cheng; George, Steven M.; Dunn, Martin L.

    2009-05-01

    The mechanical robustness of atomic layer deposited alumina and recently developed molecular layer deposited aluminum alkoxide ("alucone") films, as well as laminated composite films composed of both materials, was characterized using mechanical tensile tests along with a recently developed fluorescent tag to visualize channel cracks in the transparent films. All coatings were deposited on polyethylene naphthalate substrates and demonstrated a similar evolution of damage morphology according to applied strain, including channel crack initiation, crack propagation at the critical strain, crack densification up to saturation, and transverse crack formation associated with buckling and delamination. From measurements of crack density versus applied tensile strain coupled with a fracture mechanics model, the mode I fracture toughness of alumina and alucone films was determined to be KIC=1.89±0.10 and 0.17±0.02 MPa m0.5, respectively. From measurements of the saturated crack density, the critical interfacial shear stress was estimated to be τc=39.5±8.3 and 66.6±6.1 MPa, respectively. The toughness of nanometer-scale alumina was comparable to that of alumina thin films grown using other techniques, whereas alucone was quite brittle. The use of alucone as a spacer layer between alumina films was not found to increase the critical strain at fracture for the composite films. This performance is attributed to the low toughness of alucone. The experimental results were supported by companion simulations using fracture mechanics formalism for multilayer films. To aid future development, the modeling method was used to study the increase in the toughness and elastic modulus of the spacer layer required to render improved critical strain at fracture. These results may be applied to a broad variety of multilayer material systems composed of ceramic and spacer layers to yield robust coatings for use in chemical barrier and other applications.

  2. Hemispherical micro-resonators from atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Gray, Jason M.; Houlton, John P.; Gertsch, Jonas C.; Brown, Joseph J.; Rogers, Charles T.; George, Steven M.; Bright, Victor M.

    2014-12-01

    Hemispherical shell micro-resonators may be used as gyroscopes to potentially enable precision inertial navigation and guidance at low cost and size. Such devices require a high degree of symmetry and large quality factors (Q). Fabricating the devices from atomic layer deposition (ALD) facilitates symmetry through ALD’s high conformality and low surface roughness. To maximize Q, the shells’ geometry is optimized using finite element method (FEM) studies to reduce thermoelastic dissipation and anchor loss. The shells are fabricated by etching hemispherical molds in Si (1 1 1) substrates with a 2:7:1 volumetric ratio of hydrofluoric:nitric:acetic acids, and conformally coating and patterning the molds with ALD Al2O3. The Al2O3 shells are then released from the surrounding Si substrate with an SF6 plasma. The resulting shells typically have radii around 50 µm and thicknesses close to 50 nm. The shells are highly symmetric, with radial deviations between 0.22 and 0.49%, and robust enough to be driven on resonance at amplitudes 10 × their thickness, sufficient to visualize the resonance mode shapes in an SEM. Resonance frequencies are around 60 kHz, with Q values between 1000 and 2000. This Q is lower than the 106 predicted by FEM, implying that Q is being limited by unmodeled sources of energy loss, most likely from surface effects or material defects.

  3. High Gradient Accelerator Cavities Using Atomic Layer Deposition

    SciTech Connect

    Ives, Robert Lawrence; Parsons, Gregory; Williams, Philip; Oldham, Christopher; Mundy, Zach; Dolgashev, Valery

    2014-12-09

    In the Phase I program, Calabazas Creek Research, Inc. (CCR), in collaboration with North Carolina State University (NCSU), fabricated copper accelerator cavities and used Atomic Layer Deposition (ALD) to apply thin metal coatings of tungsten and platinum. It was hypothesized that a tungsten coating would provide a robust surface more resistant to arcing and arc damage. The platinum coating was predicted to reduce processing time by inhibiting oxides that form on copper surfaces soon after machining. Two sets of cavity parts were fabricated. One was coated with 35 nm of tungsten, and the other with approximately 10 nm of platinum. Only the platinum cavity parts could be high power tested during the Phase I program due to schedule and funding constraints. The platinum coated cavity exhibit poor performance when compared with pure copper cavities. Not only did arcing occur at lower power levels, but the processing time was actually longer. There were several issues that contributed to the poor performance. First, machining of the base copper cavity parts failed to achieve the quality and cleanliness standards specified to SLAC National Accelerator Center. Secondly, the ALD facilities were not configured to provide the high levels of cleanliness required. Finally, the nanometer coating applied was likely far too thin to provide the performance required. The coating was ablated or peeled from the surface in regions of high fields. It was concluded that the current ALD process could not provide improved performance over cavities produced at national laboratories using dedicated facilities.

  4. Biocompatibility of atomic layer-deposited alumina thin films.

    PubMed

    Finch, Dudley S; Oreskovic, Tammy; Ramadurai, Krishna; Herrmann, Cari F; George, Steven M; Mahajan, Roop L

    2008-10-01

    Presented in this paper is a study of the biocompatibility of an atomic layer-deposited (ALD) alumina (Al2O3) thin film and an ALD hydrophobic coating on standard glass cover slips. The pure ALD alumina coating exhibited a water contact angle of 55 degrees +/- 5 degrees attributed, in part, to a high concentration of -OH groups on the surface. In contrast, the hydrophobic coating (tridecafluoro-1,1,2,2-tetrahydro-octyl-methyl-bis(dimethylamino)silane) had a water contact angle of 108 degrees +/- 2 degrees. Observations using differential interference contrast microscopy on human coronary artery smooth muscle cells showed normal cell proliferation on both the ALD alumina and hydrophobic coatings when compared to cells grown on control substrates. These observations suggested good biocompatibility over a period of 7 days in vitro. Using a colorimetric assay technique to assess cell viability, the cellular response between the three substrates can be differentiated to show that the ALD alumina coating is more biocompatible and that the hydrophobic coating is less biocompatible when compared to the control. These results suggest that patterning a substrate with hydrophilic and hydrophobic groups can control cell growth. This patterning can further enhance the known advantages of ALD alumina, such as conformality and excellent dielectric properties for bio-micro electro mechanical systems (Bio-MEMS) in sensors, actuators, and microfluidics devices. PMID:18085647

  5. Studies on atomic layer deposition of IRMOF-8 thin films

    SciTech Connect

    Salmi, Leo D. Heikkilä, Mikko J.; Vehkamäki, Marko; Puukilainen, Esa; Ritala, Mikko; Sajavaara, Timo

    2015-01-15

    Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd){sub 2} (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

  6. Robust, functional nanocrystal solids by infilling with atomic layer deposition

    SciTech Connect

    Liu, Yao; Gibbs, Markelle; Perkins, Craig L.; Tolentino, Jason; Zarghami, Mohammad H.; Bustamante, Jr., Jorge; Law, Matt

    2011-12-14

    Thin films of colloidal semiconductor nanocrystals (NCs) are inherently metatstable materials prone to oxidative and photothermal degradation driven by their large surface-to-volume ratios and high surface energies. The fabrication of practical electronic devices based on NC solids hinges on preventing oxidation, surface diffusion, ripening, sintering, and other unwanted physicochemical changes that can plague these materials. Here we use low-temperature atomic layer deposition (ALD) to infill conductive PbSe NC solids with metal oxides to produce inorganic nanocomposites in which the NCs are locked in place and protected against oxidative and photothermal damage. Infilling NC field-effect transistors and solar cells with amorphous alumina yields devices that operate with enhanced and stable performance for at least months in air. Furthermore, ALD infilling with ZnO lowers the height of the inter-NC tunnel barrier for electron transport, yielding PbSe NC films with electron mobilities of 1 cm² V-1 s-1. Our ALD technique is a versatile means to fabricate robust NC solids for optoelectronic devices.

  7. Subnanometer Palladium Particles Synthesized by Atomic Layer Deposition

    SciTech Connect

    Feng, Hao P.; Libera, Joseph A.; Stair, Peter C.; Miller, Jeffrey T.; Elam, Jeffrey W.

    2011-06-03

    Monodispersed palladium nanoparticle catalysts were synthesized by atomic layer deposition (ALD) using alternating exposures of Pd hexafluoroacetylacetonate (Pd(hfac)₂) and formalin on an alumina support. The size of the ALD Pd particles could be tuned by adjusting the preparation conditions. Conventional ALD conditions produced Pd particles with an average size of 1.4 nm. Removal of surface hydroxyls from the alumina support by a chemical treatment using trimethyl aluminum (TMA) before performing Pd ALD led to nanoparticles larger than 2 nm. Ultrasmall (subnanometer) Pd particles were synthesized using low-temperature metal precursor exposures, followed by applying protective ALD alumina overcoats. The ALD Pd particles were characterized by transmission electron microscopy, extended X-ray absorption fine structure, and diffuse reflectance infrared Fourier transform spectroscopy techniques. The Pd loadings were measured by X-ray fluorescence. The catalytic performance of ALD Pd particles of different sizes was compared in the methanol decomposition reaction. The specific activity (normalized by Pd loading) of the ultrasmall Pd particles was higher than those of the larger particles. Considering the metal dispersion factor, the turnover frequency (TOF) of the ultrasmall Pd particles is comparable to that of the medium-sized (1.4 nm, on average) Pd particles synthesized under standard ALD conditions. The large Pd particles (>2 nm) are a factor of 2 less active than the smaller Pd particles.

  8. Continuous production of nanostructured particles using spatial atomic layer deposition

    SciTech Connect

    Ommen, J. Ruud van Kooijman, Dirkjan; Niet, Mark de; Talebi, Mojgan; Goulas, Aristeidis

    2015-03-15

    In this paper, the authors demonstrate a novel spatial atomic layer deposition (ALD) process based on pneumatic transport of nanoparticle agglomerates. Nanoclusters of platinum (Pt) of ∼1 nm diameter are deposited onto titania (TiO{sub 2}) P25 nanoparticles resulting to a continuous production of an active photocatalyst (0.12–0.31 wt. % of Pt) at a rate of about 1 g min{sup −1}. Tuning the precursor injection velocity (10–40 m s{sup −1}) enhances the contact between the precursor and the pneumatically transported support flows. Decreasing the chemisorption temperature (from 250 to 100 °C) results in more uniform distribution of the Pt nanoclusters as it decreases the reaction rate as compared to the rate of diffusion into the nanoparticle agglomerates. Utilizing this photocatalyst in the oxidation reaction of Acid Blue 9 showed a factor of five increase of the photocatalytic activity compared to the native P25 nanoparticles. The use of spatial particle ALD can be further expanded to deposition of nanoclusters on porous, micron-sized particles and to the production of core–shell nanoparticles enabling the robust and scalable manufacturing of nanostructured powders for catalysis and other applications.

  9. Considerations about Large Area___Low Cost Fast Imaging Photo-detectors

    SciTech Connect

    Anderson, John; Attenkofer, Klaus; Delagnes, Eric; Frisch, Henry; Genat, Jean-Francois; Grabas, Herve; Heintz, Mary K.; May, Edward; Meehan, Samuel; Oberla, Eric; Ruckman, Larry L.; Tang, Fukun; Varner, Gary; Vavra, Jaroslav; Wetstein, Matthew; /Argonne

    2012-05-07

    The Large Area Picosecond Photodetectors described in this contribution incorporate a photocathode and a borosilicate glass capillary Micro-Channel Plate (MCP) pair functionalised by atomic layer deposition (ALD) of separate resistive and secondary emission materials. Initial testing with matched pairs of small glass capillary test disks has demonstrated gains of the order of 10{sup 5}-10{sup 6}. Compared to other fast imaging devices, these photodetectors are expected to provide timing resolutions in the 10-100 ps range, and two-dimension position in the sub-millimeter range. If daisy chained, large detectors read at both ends with fast digitising integrated electronics providing zero-suppressed calibrated data should be produced at relatively low cost in large quantities.

  10. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    SciTech Connect

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

  11. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE PAGESBeta

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more » between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

  12. Atomic layer etching removal of damaged layers in a contact hole for low sheet resistance

    SciTech Connect

    Kim, Jong Kyu; Cho, Sung Il; Lee, Sung Ho; Kim, Chan Kyu; Min, Kyung Suk; Yeom, Geun Young

    2013-11-15

    A damaged layer remains on silicon substrates after high-aspect-ratio contact (HARC) etching when using a fluorocarbon gas. Atomic layer etching (ALET) is a technique that can be applied to remove the damaged layer of silicon, removing about 1.36 Å per etch cycle. The characteristics of contact damage removal by ALET are investigated and compared with the conventional damage removal technique of low-power CF{sub 4} plasma etching. The low-power CF{sub 4} plasma etching technique not only has inadequate etch depth control, but also introduces secondary damage by implanting impurities about 25 Å into the contact bottom of the silicon surface. However, ALET allows contact damage to be removed effectively without introducing secondary damage to the substrate, and with precision etch depth control at the angstrom scale. When ALET is applied subsequent to low-power CF{sub 4} plasma etching, the fluorine- and carbon-damaged silicon is effectively removed in about 10 cycles. The sheet resistance of HARC etched silicon decreases from 142 to 137 Ω/□ after using low-power CF{sub 4} plasma etching, and subsequent ALET treatment further decreases the sheet resistance to 129 Ω/□, which is close to the reference value of 124 Ω/□.

  13. Electrohydrodynamically driven large-area liquid ion sources

    DOEpatents

    Pregenzer, Arian L.

    1988-01-01

    A large-area liquid ion source comprises means for generating, over a large area of the surface of a liquid, an electric field of a strength sufficient to induce emission of ions from a large area of said liquid. Large areas in this context are those distinct from emitting areas in unidimensional emitters.

  14. Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

    SciTech Connect

    Muneshwar, Triratna Cadien, Ken

    2015-11-15

    Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known. In this article, precursor condensation within an ALD valve is described, and the effect of the continuous precursor source from condensate evaporation on ALD growth is discussed. The influence of the ALD valve temperature on growth and electrical resistivity of ZrN plasma enhanced ALD (PEALD) films is reported. Increasing ALD valve temperature from 75 to 95 °C, with other process parameters being identical, decreased both the growth per cycle and electrical resistivity (ρ) of ZrN PEALD films from 0.10 to 0.07 nm/cycle and from 560 to 350 μΩ cm, respectively. Our results show that the non-ALD growth resulting from condensate accumulation is eliminated at valve temperatures close to the pressure corrected boiling point of precursor.

  15. Large area event counting detectors with high spatial and temporal resolution

    NASA Astrophysics Data System (ADS)

    Siegmund, O. H. W.; McPhate, J. B.; Vallerga, J. V.; Tremsin, A. S.; Frisch, H. E.; Elam, J. W.; Mane, A. U.; Wagner, R. G.

    2014-04-01

    Novel large area microchannel plates (MCPs) constructed using micro-capillary arrays functionalized by atomic layer deposition (ALD) have been successfully demonstrated in large format detectors (10 cm and 20 cm) with cross delay line and cross strip readouts. Borosilicate micro-capillary substrates allow robust MCPs to be made in sizes to 20 cm, the intrinsic background rates are low ( < 0.06 events cm-2 sec-1), the channel open area can be made as high as 85%, and the gain after preconditioning (vacuum bake and burn-in) shows virtually no change over > 7 C cm-2 extracted charge. We have constructed a number of detectors with these novel MCPs, including a 10 × 10 cm cross strip readout device and 20 × 20 cm delay line readout sensors. The cross strip detector has very high spatial resolution (the 20 μm MCP pores can be resolved, thus obtaining ~ 5k × 5k resolution elements), good time resolution ( < 1 ns), and high event rate ( > 5 million counts/s at 20% dead time), while operating at relatively low gain ( ~ 106). The 20 × 20 cm delay line detectors have achieved spatial resolutions of ~ 50 μm and event rates of several MHz, with good gain and background uniformity and < 200 ps event time tagging. Progress has also been made in construction of a 20 × 20 cm sealed tube optical imager, and we have achieved > 20% quantum efficiency and good uniformity for large area (20 cm) bialkali photocathodes.

  16. Advanced Lithium Ion Battery Materials Prepared with Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Cavanagh, Andrew S.

    As the world consumes the dwindling supply of fossil fuels, an alternative to gasoline powered vehicles will become necessary. Lithium ion batteries (LIBs) are emerging as the dominant power source for portable electronics, and are seen as a promising energy source in the development of electric vehicles. Current LIB technology is not well suited for vehicles, increases in the energy density, power density and durability are needed before LIB are ready for widespread use in electric vehicles. LiCoO2 and graphite are the dominant cathode and anode active materials, respectively in LIBs. On the cathode side, instabilities in LiCoO 2 can lead to the deterioration of the LIB. Decomposition of electrolyte on the graphite anode surface to form a solid-electrolyte interphase (SEI) consumes lithium from the cathode resulting in a lower battery capacity. Instabilities in the in the SEI can result in catastrophic battery failure. Previous studies have employed metal oxides films, typically grown with wet chemical techniques, to stabilize LiCoO2 and mitigate the formation of the SEI on graphite. The thicknesses of films grown with wet chemical techniques was typically ˜50--1000 A. In order to achieve higher power densities, the particle size of LIB active materials is being scaled down. As active materials get smaller the mass contribution of a protective film can become a significant fraction of the total mass. Atomic layer deposition (ALD) has been used to grow ultra thin films of Al2O3 on LiCoO2 and graphite. By altering the interaction between the active material and the battery electrolyte it was possible to improve the stability of both LiCoO2 and graphite electrodes in LIBs. In the case of graphite, the Al2O3 film may be thought of as an artificial SEI. During the initial charge-discharge cycle of a LIB, the electrolyte decomposes on the anode to form the SEI. The formation of the SEI is believed to prevent further decomposition of the electrolyte on the anode surface

  17. Polyurethane Masks Large Areas in Electroplating

    NASA Technical Reports Server (NTRS)

    Beasley, J. L.

    1985-01-01

    Polyurethane foam provides effective mask in electroplating of copper or nickel. Thin layer of Turco maskant painted on area to be masked: Layer ensures polyurethane foam removed easily after served its purpose. Component A, isocyanate, and component B, polyol, mixed together and brushed or sprayed on mask area. Mixture reacts, yielding polyurethane foam. Foam prevents deposition of nickel or copper on covered area. New method saves time, increases productivity and uses less material than older procedures.

  18. Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate

    SciTech Connect

    Yu, Wonjong; Cho, Gu Young; Noh, Seungtak; Tanveer, Waqas Hassan; Cha, Suk Won; Ji, Sanghoon; An, Jihwan

    2015-01-15

    An ultrathin yttria-stabilized zirconia (YSZ) blocking layer deposited by atomic layer deposition (ALD) was utilized for improving the performance and reliability of low-temperature solid oxide fuel cells (SOFCs) supported by an anodic aluminum oxide substrate. Physical vapor-deposited YSZ and gadolinia-doped ceria (GDC) electrolyte layers were deposited by a sputtering method. The ultrathin ALD YSZ blocking layer was inserted between the YSZ and GDC sputtered layers. To investigate the effects of an inserted ultrathin ALD blocking layer, SOFCs with and without an ultrathin ALD blocking layer were electrochemically characterized. The open circuit voltage (1.14 V) of the ALD blocking-layered SOFC was visibly higher than that (1.05 V) of the other cell. Furthermore, the ALD blocking layer augmented the power density and improved the reproducibility.

  19. Palladium catalysts synthesized by atomic layer deposition for methanol decomposition.

    SciTech Connect

    Elam, J. W.; Feng, H.; Stair, P. C.; Libera, J. A.; Setthapun, W.; Northwestern Univ.

    2010-05-25

    Atomic layer deposition (ALD) palladium films were deposited at 200 C on various ALD metal oxide surfaces using sequential exposures to Pd(II) hexafluoroacetylacetonate (Pd(hfac)2) and formalin. In situ quartz crystal microbalance measurements as well as ex situ measurements performed on planar substrates revealed that the Pd growth begins with a relatively slow nucleation process and accelerates once an adequate amount of Pd has deposited on the surface. Furthermore, the Pd nucleation is faster on ALD ZnO surfaces compared to ALD Al2O3 surfaces. ALD was utilized to synthesize highly dispersed, uniform Pd nanoparticles (1 to 2 nm in diameter) on ALD ZnO and Al2O3 coated mesoporous silica gel, and the catalytic performances of these samples were compared in the methanol decomposition reaction. The ALD Pd-Al2O3 showed high activity and hydrogen selectivity at relatively low temperatures while the ALD Pd-ZnO showed very low activity as well as quick deactivation. In situ extended X-ray absorption fine structure (EXAFS) measurement revealed that the Pd supported on ZnO 'dissolves' into the substrate during the methanol decomposition reaction which accounts for the gradual disappearance of its catalytic activity. By applying one cycle of ALD Al2O3 on top of the Pd-ZnO catalyst, the activity was enhanced and the catalyst deactivation was mitigated. This Al2O3 overcoating method stabilizes the Pd-ZnO and effectively prevents the dissolution of Pd into the ZnO substrate.

  20. The Large Area Pulsed Solar Simulator (LAPSS)

    NASA Technical Reports Server (NTRS)

    Mueller, R. L.

    1994-01-01

    The Large Area Pulsed Solar Simulator (LAPSS) has been installed at JPL. It is primarily intended to be used to illuminate and measure the electrical performance of photovoltaic devices. The simulator, originally manufactured by Spectrolab, Sylmar, CA, occupies an area measuring about 3 m wide x 12 m long. The data acquisition and data processing subsystems have been modernized. Tests on the LAPSS performance resulted in better than plus or minus 2 percent uniformity of irradiance at the test plane and better than plus or minus 0.3 percent measurement repeatability after warm-up. Glass absorption filters reduce the ultraviolet light emitted from the xenon flash lamps. This results in a close match to three different standard airmass zero and airmass 1.5 spectral irradiances. The 2-ms light pulse prevents heating of the device under test, resulting in more reliable temperature measurements. Overall, excellent electrical performance measurements have been made of many different types and sizes of photovoltaic devices. Since the original printing of this publication, in 1993, the LAPSS has been operational and new capabilities have been added. This revision includes a new section relating to the installation of a method to measure the I-V curve of a solar cell or array exhibiting a large effective capacitance. Another new section has been added relating to new capabilities for plotting single and multiple I-V curves, and for archiving the I-V data and test parameters. Finally, a section has been added regarding the data acquisition electronics calibration.

  1. Fermi Large Area Telescope Second Source Catalog

    NASA Technical Reports Server (NTRS)

    Nolan, P. L.; Abdo, A. A.; Ackermann, M.; Ajello, M; Allafort, A.; Antolini, E; Bonnell, J.; Cannon, A.; Celik O.; Corbet, R.; Davis, D. S.; DeCesar, M. E.; Ferrara, E. C.; Gehrels, N.; Harding, A. K.; Hays, E.; Johnson, T. E.; McConville, W.; McEnery, J. E; Perkins, J. S.; Racusin, J. L; Scargle, J. D.; Stephens, T. E.; Thompson, D. J.; Troja, E.

    2012-01-01

    We present the second catalog of high-energy gamma-ray sources detected by the Large Area Telescope (LAT), the primary science instrument on the Fermi Gamma-ray Space Telescope (Fermi), derived from data taken during the first 24 months of the science phase of the mission, which began on 2008 August 4. Source detection is based on the average flux over the 24-month period. The Second Fermi-LAT catalog (2FGL) includes source location regions, defined in terms of elliptical fits to the 95% confidence regions and spectral fits in terms of power-law, exponentially cutoff power-law, or log-normal forms. Also included are flux measurements in 5 energy bands and light curves on monthly intervals for each source. Twelve sources in the catalog are modeled as spatially extended. We provide a detailed comparison of the results from this catalog with those from the first Fermi-LAT catalog (1FGL). Although the diffuse Galactic and isotropic models used in the 2FGL analysis are improved compared to the 1FGL catalog, we attach caution flags to 162 of the sources to indicate possible confusion with residual imperfections in the diffuse model. The 2FGL catalog contains 1873 sources detected and characterized in the 100 11eV to 100 GeV range of which we consider 127 as being firmly identified and 1171 as being reliably associated with counterparts of known or likely gamma-ray-producing source classes.

  2. Large area silicon sheet by EFG

    NASA Technical Reports Server (NTRS)

    Kalejs, J. P.

    1982-01-01

    Work carried out on the JPL Flat Plate Solar Array Project, for the purpose of developing a method for silicon ribbon production by Edge-defined Film-fed Growth (EEG) for use as low-cost substrate material in terrestrial solar cell manufacture, is described. A multiple ribbon furnace unit that is designed to operate on a continuous basis for periods of at least one week, with melt replenishment and automatic ribbon width control, and to produce silicon sheet at a rate of one square meter per hour, was constructed. Program milestones set for single ribbon furnace operation to demonstrate basic EEG system capabilities with respect to growth speed, thickness and cell performance were achieved for 10 cm wide ribbon: steady-state growth at 4 cm/min and 200 micron thickness over periods of an hour and longer was made routine, and a small area cell efficiency of 13+% demonstrated. Large area cells of average efficiency of 10 to 11%, with peak values of 11 to 12% were also achieved. The integration of these individual performance levels into multiple ribbon furnace operation was not accomplished.

  3. FERMI LARGE AREA TELESCOPE SECOND SOURCE CATALOG

    SciTech Connect

    Nolan, P. L.; Ajello, M.; Allafort, A.; Bechtol, K.; Berenji, B.; Blandford, R. D.; Bloom, E. D.; Abdo, A. A.; Ackermann, M.; Antolini, E.; Bonamente, E.; Atwood, W. B.; Belfiore, A.; Axelsson, M.; Baldini, L.; Bellazzini, R.; Ballet, J.; Bastieri, D.; Bignami, G. F. E-mail: Gino.Tosti@pg.infn.it E-mail: tburnett@u.washington.edu; and others

    2012-04-01

    We present the second catalog of high-energy {gamma}-ray sources detected by the Large Area Telescope (LAT), the primary science instrument on the Fermi Gamma-ray Space Telescope (Fermi), derived from data taken during the first 24 months of the science phase of the mission, which began on 2008 August 4. Source detection is based on the average flux over the 24 month period. The second Fermi-LAT catalog (2FGL) includes source location regions, defined in terms of elliptical fits to the 95% confidence regions and spectral fits in terms of power-law, exponentially cutoff power-law, or log-normal forms. Also included are flux measurements in five energy bands and light curves on monthly intervals for each source. Twelve sources in the catalog are modeled as spatially extended. We provide a detailed comparison of the results from this catalog with those from the first Fermi-LAT catalog (1FGL). Although the diffuse Galactic and isotropic models used in the 2FGL analysis are improved compared to the 1FGL catalog, we attach caution flags to 162 of the sources to indicate possible confusion with residual imperfections in the diffuse model. The 2FGL catalog contains 1873 sources detected and characterized in the 100 MeV to 100 GeV range of which we consider 127 as being firmly identified and 1171 as being reliably associated with counterparts of known or likely {gamma}-ray-producing source classes.

  4. Large area atmospheric-pressure plasma jet

    DOEpatents

    Selwyn, Gary S.; Henins, Ivars; Babayan, Steve E.; Hicks, Robert F.

    2001-01-01

    Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250.degree. C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A "jet" of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode. Because of the atmospheric pressure operation, there is a negligible density of ions surviving for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike the situation for low-pressure plasma sources and conventional plasma processing methods.

  5. Large area QNDE inspection for airframe integrity

    NASA Technical Reports Server (NTRS)

    Winfree, William P.; Heyman, Joseph S.

    1991-01-01

    Quantitative Nondestructive Evaluation (QNDE) technology is being developed to provide new options for cost effective inspection of airframes. An R&D effort based on five NDE technologies is addressing questions of structural bonding assessment, corrosion detection, multisite damage detection, and fatigue characterization. The research/applications are being conducted by prioritized focussing and staging of the following technologies: (1) thermal NDE; (2) ultrasonic NDE; (3) coherent optical NDE; (4) magnetic imaging NDE; and (5) radiographic NDE. The focus here is on the most recent applications of thermal NDE technology to large area inspection of lap-joint and stiffener bonds. The approach is based on pulsed radiant heating of the airframe and measurement of the surface temperature of the structure with an infrared imager. Several advantages of the technique are that it is noncontacting, inspects one square meter area in a period of less than 2 minutes and has no difficulty inspecting typical curvatures of the fuselage. Numerical models of heat flow in these geometries are used to determine appropriate techniques for reduction of the infrared images, thereby delineating regions of disbonds. These models are also used to determine the optimum heating and measurement times for maximizing the contrast between bonded and unbonded structures. Good agreement is found between these results and experimental measurements, and a comparison of the two are presented. Also presented are results of measurements on samples with fabricated defects which show the technique is able to clearly indicate regions of disbonds. Measurements on an airframe also clearly image subsurface structure.

  6. Large area silicon sheet by EFG

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Progress was made in improving ribbon flatness and reducing stress, and in raising cell performance for 10 cm wide ribbon grown in single cartridge EFG furnaces. Optimization of growth conditions resulted in improved ribbon thickness uniformity at a thickness of 200 micron, grown at 4 cm/minute, and growth at this target speed is routinely achieved over periods of the order of one hour or more. With the improved ribbon flatness, fabrication of large area (50 cm2) cells is now possible, and 10 to 11% efficiencies were demonstrated on ribbon grown at 3.5 to 4 cm/minute. Factors limiting performance of the existing multiple ribbon furnace were identified, and growth system improvements implemented to help raise throughput rates and the time percentage of simultaneous three-ribbon growth. However, it is evident that major redesign of this furnace would be needed to overcome shortfalls in its ability to achieve the Technical Features Demonstration goals of 1980. It was decided to start construction of a new multiple ribbon furnace and to incorporate the desired improvements into its design. The construction of this furnace is completed.

  7. Large-area lanthanum hexaboride electron emitter

    SciTech Connect

    Goebel, D.M.; Hirooka, Y.; Sketchley, T.A.

    1985-09-01

    A large-area cathode assembly which is capable of continuous, high-current electron emission is described. The cathode utilizes an indirectly heated lanthanum hexaboride (LaB/sub 6/) disk as the thermionic electron emitter. The LaB/sub 6/ cathode emits over 600 A of electrons at an average of 20 A/cm/sup 2/ continuously with no observable lifetime limits to date after about 400 h of operation in a plasma discharge. Proper clasping of the LaB/sub 6/ disk is required to avoid impurity production from chemical reactions with the holder and to provide adequate support if the disk fractures during rapid thermal cycling. Modification of the LaB/sub 6/ surface composition due to preferential sputtering of boron by hydrogen and argon ions in the plasma discharge has been observed. The surface appearance is consistent with the formation of LaB/sub 4/ as a result of boron depletion. The electron emission capability of the cathode is not significantly altered by the surface change. This surface modification by preferential sputtering is not observed in hollow cathodes where the ion energy from the cathode sheath voltage is typically less than 50 V. The electron emission by the cathode has not been affected by exposure to both air and water during operation. Utilizing thick disks of this intermediate temperature cathode material results in reliable, high-current, long-lifetime electron emitter assemblies.

  8. Airbrushed Nickel Nanoparticles for Large-Area

    SciTech Connect

    Sarac, Mehmet; ANDERSON, BRYAN; Pearce, Ryan; Railsback, Justin; Oni, Adedapo; White, Ryan M.; Hensley, Dale K; Lebeau, James M; Melechko, Anatoli; Tracy, Joseph B

    2013-01-01

    Vertically aligned carbon nanofibers (VACNFs) were grown by plasma-enhanced chemical vapor deposition (PECVD) using Ni nanoparticle (NP) catalysts that were deposited by airbrushing onto Si, Al, Cu, and Ti substrates. Airbrushing is a simple method for depositing catalyst NPs over large areas that is compatible with roll-to-roll processing. The distribution and morphology of VACNFs are affected by the airbrushing parameters and the composition of the metal foil. Highly concentrated Ni NPs in heptane give more uniform distributions than pentane and hexanes, resulting in more uniform coverage of VACNFs. For VACNF growth on metal foils, Si micropowder was added as a precursor for Si-enriched coatings formed in situ on the VACNFs that impart mechanical rigidity. Interactions between the catalyst NPs and the metal substrates impart control over the VACNF morphology. Growth of carbon nanostructures on Cu is particularly noteworthy because the miscibility of Ni with Cu poses challenges for VACNF growth, and carbon nanostructures anchored to Cu substrates are desired as anode materials for Li-ion batteries and for thermal interface materials.

  9. Atomic-layer etching of Ge using an ultraclean ECR plasma

    NASA Astrophysics Data System (ADS)

    Sugiyama, Takayuki; Matsuura, Takashi; Murota, Junichi

    1997-03-01

    Self-limited atomic-layer etching of Ge(100) has been investigated by alternated chlorine adsorption and Ar + ion irradiation using an ultraclean ECR plasma. With short Ar + ion irradiation, about a quarter of atomic-layer thickness was etched in each cycle under the saturated adsorption condition, which corresponds with the case of Si(100). With increasing irradiation amount of Ar + ions, the etch rate per cycle increases and tends to saturate to the atomic-layer thickness of Ge(100). Taking Ar + ion induced reaction into consideration, a simple exponentially-saturating equation well describes the atomic-layer etch rate of Ge. From measured Ar + ion flux density distribution, it is estimated that the energy of Ar + ions predominantly contributing to the atomic-layer etching of Ge is higher than the order of ˜13 eV.

  10. Atomic-layer deposited thulium oxide as a passivation layer on germanium

    SciTech Connect

    Mitrovic, I. Z. Hall, S.; Weerakkody, A. D.; Sedghi, N.; Althobaiti, M.; Hesp, D.; Dhanak, V. R.; Santoni, A.; Chalker, P. R.; Henkel, C.; Dentoni Litta, E.; Hellström, P.-E.; Östling, M.; Tan, H.; Schamm-Chardon, S.

    2015-06-07

    A comprehensive study of atomic-layer deposited thulium oxide (Tm{sub 2}O{sub 3}) on germanium has been conducted using x-ray photoelectron spectroscopy (XPS), vacuum ultra-violet variable angle spectroscopic ellipsometry, high-resolution transmission electron microscopy (HRTEM), and electron energy-loss spectroscopy. The valence band offset is found to be 3.05 ± 0.2 eV for Tm{sub 2}O{sub 3}/p-Ge from the Tm 4d centroid and Ge 3p{sub 3/2} charge-corrected XPS core-level spectra taken at different sputtering times of a single bulk thulium oxide sample. A negligible downward band bending of ∼0.12 eV is observed during progressive differential charging of Tm 4d peaks. The optical band gap is estimated from the absorption edge and found to be 5.77 eV with an apparent Urbach tail signifying band gap tailing at ∼5.3 eV. The latter has been correlated to HRTEM and electron diffraction results corroborating the polycrystalline nature of the Tm{sub 2}O{sub 3} films. The Tm{sub 2}O{sub 3}/Ge interface is found to be rather atomically abrupt with sub-nanometer thickness. In addition, the band line-up of reference GeO{sub 2}/n-Ge stacks obtained by thermal oxidation has been discussed and derived. The observed low reactivity of thulium oxide on germanium as well as the high effective barriers for holes (∼3 eV) and electrons (∼2 eV) identify Tm{sub 2}O{sub 3} as a strong contender for interfacial layer engineering in future generations of scaled high-κ gate stacks on Ge.

  11. Atomic layer deposited aluminum oxide and Parylene C bi-layer encapsulation for biomedical implantable devices

    NASA Astrophysics Data System (ADS)

    Xie, Xianzong

    Biomedical implantable devices have been developed for both research and clinical applications, to stimulate and record physiological signals in vivo. Chronic use of biomedical devices with thin-film-based encapsulation in large scale is impeded by their lack of long-term functionality and stability. Biostable, biocompatible, conformal, and electrically insulating coatings that sustain chronic implantation are essential for chip-scale implantable electronic systems. Even though many materials have been studied to for this purpose, to date, no encapsulation method has been thoroughly characterized or qualified as a broadly applicable long-term hermetic encapsulation for biomedical implantable devices. In this work, atomic layer deposited Al2O3 and Parylene C bi-layer was investigated as encapsulation for biomedical devices. The combination of ALD Al2O3 and CVD Parylene C encapsulation extended the lifetime of coated interdigitated electrodes (IDEs) to up to 72 months (to date) with low leakage current of ~ 15 pA. The long lifetime was achieved by significantly reducing moisture permeation due to the ALD Al2O3 layer. Moreover, the bi-layer encapsulation separates the permeated moisture (mostly at the Al2O3 and Parylene interface) from the surface contaminants (mostly at the device and Al 2O3 interface), preventing the formation of localized electrolyte through condensation. Al2O3 works as an inner moisture barrier and Parylene works as an external ion barrier, preventing contact of Al2O3 with liquid water, and slowing the kinetics of alumina corrosion. Selective removal of encapsulation materials is required to expose the active sites for interacting with physiological environment. A self-aligned mask process with three steps was developed to expose active sites, composed of laser ablation, oxygen plasma etching, and BOE etching. Al2O 3 layer was found to prevent the formation of microcracks in the iridium oxide film during laser ablation. Bi-layer encapsulated

  12. Tailoring polarity in a layered nickelate with single atomic layer control

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Anand; Nelson-Cheeseman, Brittany; Zhou, Hua; Balachandran, Prasanna; Fabbris, Gilberto; Hoffman, Jason; Haskel, Daniel; Rondinelli, James

    2014-03-01

    Many of the 3d transition metal oxides share a common structural MO6 building unit--a central transition metal (TM) cation octahedrally coordinated with oxygen nearest neighbors. The electronic states in these materials can be modified by tailoring the M-O bonds, which typically include the application of epitaxial strain in thin films, or pressure and isovalent cation substitution in bulk samples. Here, we present a new route to tailor the M-O bonds without changes to the strain state or stoichiometry in two-dimensional perovskite nickelate (n =1 in the Ruddlesden Popper series). We do this by tailoring the dipolar electrostatic interactions at the unit cell level in nominally non-polar LaSrNiO4 via single atomic layer-by-layer synthesis using oxide-MBE. We reconstruct the response of the crystal lattice to the induced polarity using a x-ray phase retrieval technique (COBRA). We find that the response of the O anions to the resulting local electric fields distorts the M-O bonds, being largest for the apical oxygens (Oap) . It also alters the Ni valence.

  13. Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

    PubMed

    Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

    2015-10-14

    Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred

  14. Large Area X-ray Spectroscopy Mission

    NASA Technical Reports Server (NTRS)

    Tananbaum, Harvey

    1996-01-01

    The Large Area X-ray Spectroscopy (LAXS) mission study concept has evolved strongly over the last year culminating in the merging of LAXS with the Goddard Space Flight Center (GSFC) proposal for a similar mission, the Next Generation X-ray Observatory (NGXO, PI: Nick White). The resulting merger, re-named the High Throughput X-rays Spectroscopy (HTXS) Mission has also expanded by the inclusion of another SAO proposed new mission concept proposal, the Hard X-Ray Telescope (PI: Paul Gorenstein). The resultant multi-instrument mission retains much of heritage from the LAXS proposal, including the use of multiple satellites for robustness. These mergers resulted from a series of contacts between various team members, via e-mail, telecons, and in-person meetings. The impetus for the mergers was the fundamental similarity between the missions, and the recognition that all three proposal teams had significant contributions to make in the effort to define the next stage in the X-ray exploration of the universe. We have enclosed four items that represent some of the work that has occurred during the first year of the study: first, a presentation at the Leicester meeting, second a presentation that was made to Dan Goldin following the merging of LAXS and NGXO, third a copy of the first announcement for the Workshop, and finally the interim report that was prepared by the HTXS study team towards the end of the first year. This last document provides the foundation for the HTXS Technology Roadmap that is being generated. The HTXS roadmap will define the near-term goals that the merged mission must achieve over the next few years. A web site has been developed and populated that contains much of the material that has been generated over the past year.

  15. Large Area Lunar Dust Flux Measurement Instrument

    NASA Technical Reports Server (NTRS)

    Corsaro, R.; Giovane, F.; Liou, Jer-Chyi; Burchell, M.; Stansbery, Eugene; Lagakos, N.

    2009-01-01

    The instrument under development is designed to characterize the flux and size distribution of the lunar micrometeoroid and secondary ejecta environment. When deployed on the lunar surface, the data collected will benefit fundamental lunar science as well as enabling more reliable impact risk assessments for human lunar exploration activities. To perform this task, the instrument requirements are demanding. It must have as large a surface area as possible to sample the very sparse population of the larger potentially damage-inducing micrometeorites. It must also have very high sensitivity to enable it to measure the flux of small (<10 micron) micrometeorite and secondary ejecta dust particles. To be delivered to the lunar surface, it must also be very low mass, rugged and stow compactly. The instrument designed to meet these requirements is called FOMIS. It is a large-area thin film under tension (i.e. a drum) with multiple fiber optic displacement (FOD) sensors to monitor displacements of the film. This sensor was chosen since it can measure displacements over a wide dynamic range: 1 cm to sub-Angstrom. A prototype system was successfully demonstrated using the hypervelocity impact test facility at the University of Kent (Canterbury, UK). Based on these results, the prototype system can detect hypervelocity (approx.5 km/s) impacts by particles as small as 2 microns diameter. Additional tests using slow speeds find that it can detect secondary ejecta particles (which do not penetrate the film) with momentums as small as 15 pico-gram 100m/s, or nominally 5 microns diameter at 100 m/s.

  16. Fermi Large Area Telescope Third Source Catalog

    NASA Astrophysics Data System (ADS)

    Acero, F.; Ackermann, M.; Ajello, M.; Albert, A.; Atwood, W. B.; Axelsson, M.; Baldini, L.; Ballet, J.; Barbiellini, G.; Bastieri, D.; Belfiore, A.; Bellazzini, R.; Bissaldi, E.; Blandford, R. D.; Bloom, E. D.; Bogart, J. R.; Bonino, R.; Bottacini, E.; Bregeon, J.; Britto, R. J.; Bruel, P.; Buehler, R.; Burnett, T. H.; Buson, S.; Caliandro, G. A.; Cameron, R. A.; Caputo, R.; Caragiulo, M.; Caraveo, P. A.; Casandjian, J. M.; Cavazzuti, E.; Charles, E.; Chaves, R. C. G.; Chekhtman, A.; Cheung, C. C.; Chiang, J.; Chiaro, G.; Ciprini, S.; Claus, R.; Cohen-Tanugi, J.; Cominsky, L. R.; Conrad, J.; Cutini, S.; D'Ammando, F.; de Angelis, A.; DeKlotz, M.; de Palma, F.; Desiante, R.; Digel, S. W.; Di Venere, L.; Drell, P. S.; Dubois, R.; Dumora, D.; Favuzzi, C.; Fegan, S. J.; Ferrara, E. C.; Finke, J.; Franckowiak, A.; Fukazawa, Y.; Funk, S.; Fusco, P.; Gargano, F.; Gasparrini, D.; Giebels, B.; Giglietto, N.; Giommi, P.; Giordano, F.; Giroletti, M.; Glanzman, T.; Godfrey, G.; Grenier, I. A.; Grondin, M.-H.; Grove, J. E.; Guillemot, L.; Guiriec, S.; Hadasch, D.; Harding, A. K.; Hays, E.; Hewitt, J. W.; Hill, A. B.; Horan, D.; Iafrate, G.; Jogler, T.; Jóhannesson, G.; Johnson, R. P.; Johnson, A. S.; Johnson, T. J.; Johnson, W. N.; Kamae, T.; Kataoka, J.; Katsuta, J.; Kuss, M.; La Mura, G.; Landriu, D.; Larsson, S.; Latronico, L.; Lemoine-Goumard, M.; Li, J.; Li, L.; Longo, F.; Loparco, F.; Lott, B.; Lovellette, M. N.; Lubrano, P.; Madejski, G. M.; Massaro, F.; Mayer, M.; Mazziotta, M. N.; McEnery, J. E.; Michelson, P. F.; Mirabal, N.; Mizuno, T.; Moiseev, A. A.; Mongelli, M.; Monzani, M. E.; Morselli, A.; Moskalenko, I. V.; Murgia, S.; Nuss, E.; Ohno, M.; Ohsugi, T.; Omodei, N.; Orienti, M.; Orlando, E.; Ormes, J. F.; Paneque, D.; Panetta, J. H.; Perkins, J. S.; Pesce-Rollins, M.; Piron, F.; Pivato, G.; Porter, T. A.; Racusin, J. L.; Rando, R.; Razzano, M.; Razzaque, S.; Reimer, A.; Reimer, O.; Reposeur, T.; Rochester, L. S.; Romani, R. W.; Salvetti, D.; Sánchez-Conde, M.; Saz Parkinson, P. M.; Schulz, A.; Siskind, E. J.; Smith, D. A.; Spada, F.; Spandre, G.; Spinelli, P.; Stephens, T. E.; Strong, A. W.; Suson, D. J.; Takahashi, H.; Takahashi, T.; Tanaka, Y.; Thayer, J. G.; Thayer, J. B.; Thompson, D. J.; Tibaldo, L.; Tibolla, O.; Torres, D. F.; Torresi, E.; Tosti, G.; Troja, E.; Van Klaveren, B.; Vianello, G.; Winer, B. L.; Wood, K. S.; Wood, M.; Zimmer, S.; Fermi-LAT Collaboration

    2015-06-01

    We present the third Fermi Large Area Telescope (LAT) source catalog (3FGL) of sources in the 100 MeV-300 GeV range. Based on the first 4 yr of science data from the Fermi Gamma-ray Space Telescope mission, it is the deepest yet in this energy range. Relative to the Second Fermi LAT catalog, the 3FGL catalog incorporates twice as much data, as well as a number of analysis improvements, including improved calibrations at the event reconstruction level, an updated model for Galactic diffuse γ-ray emission, a refined procedure for source detection, and improved methods for associating LAT sources with potential counterparts at other wavelengths. The 3FGL catalog includes 3033 sources above 4σ significance, with source location regions, spectral properties, and monthly light curves for each. Of these, 78 are flagged as potentially being due to imperfections in the model for Galactic diffuse emission. Twenty-five sources are modeled explicitly as spatially extended, and overall 238 sources are considered as identified based on angular extent or correlated variability (periodic or otherwise) observed at other wavelengths. For 1010 sources we have not found plausible counterparts at other wavelengths. More than 1100 of the identified or associated sources are active galaxies of the blazar class; several other classes of non-blazar active galaxies are also represented in the 3FGL. Pulsars represent the largest Galactic source class. From source counts of Galactic sources we estimate that the contribution of unresolved sources to the Galactic diffuse emission is ˜3% at 1 GeV.

  17. Large-area mapping of biodiversity

    USGS Publications Warehouse

    Scott, J.M.; Jennings, M.D.

    1998-01-01

    The age of discovery, description, and classification of biodiversity is entering a new phase. In responding to the conservation imperative, we can now supplement the essential work of systematics with spatially explicit information on species and assemblages of species. This is possible because of recent conceptual, technical, and organizational progress in generating synoptic views of the earth's surface and a great deal of its biological content, at multiple scales of thematic as well as geographic resolution. The development of extensive spatial data on species distributions and vegetation types provides us with a framework for: (a) assessing what we know and where we know it at meso-scales, and (b) stratifying the biological universe so that higher-resolution surveys can be more efficiently implemented, coveting, for example, geographic adequacy of specimen collections, population abundance, reproductive success, and genetic dynamics. The land areas involved are very large, and the questions, such as resolution, scale, classification, and accuracy, are complex. In this paper, we provide examples from the United States Gap Analysis Program on the advantages and limitations of mapping the occurrence of terrestrial vertebrate species and dominant land-cover types over large areas as joint ventures and in multi-organizational partnerships, and how these cooperative efforts can be designed to implement results from data development and analyses as on-the-ground actions. Clearly, new frameworks for thinking about biogeographic information as well as organizational cooperation are needed if we are to have any hope of documenting the full range of species occurrences and ecological processes in ways meaningful to their management. The Gap Analysis experience provides one model for achieving these new frameworks.

  18. Large area epitaxial germanane for electronic devices

    NASA Astrophysics Data System (ADS)

    Amamou, Walid; Odenthal, Patrick M.; Bushong, Elizabeth J.; O'Hara, Dante J.; Luo, Yunqiu Kelly; van Baren, Jeremiah; Pinchuk, Igor; Wu, Yi; Ahmed, Adam S.; Katoch, Jyoti; Bockrath, Marc W.; Tom, Harry W. K.; Goldberger, Joshua E.; Kawakami, Roland K.

    2015-09-01

    We report the synthesis and transfer of epitaxial germanane (GeH) onto arbitrary substrates by electrochemical delamination and investigate its optoelectronic properties. GeH films with thickness ranging from 1 to 600 nm (2-1000 layers) and areas up to ˜1 cm2 have been reliably transferred and characterized by photoluminescence, x-ray diffraction, and energy-dispersive x-ray spectroscopy. Wavelength dependent photoconductivity measurements on few-layer GeH exhibit an absorption edge and provide a sensitive characterization tool for ultrathin germanane materials. The transfer process also enables the possibility of integrating germanane into vertically stacked heterostructures.

  19. Lattice thermal transport in large-area polycrystalline graphene

    NASA Astrophysics Data System (ADS)

    Aksamija, Z.; Knezevic, I.

    2014-07-01

    We study lattice thermal transport in large-area polycrystalline graphene, such as the samples grown by chemical vapor deposition (CVD) of carbon on Cu. These systems are composed of single-crystalline grains with a broad range of sizes and crystal orientations, separated by atomically rough grain boundaries. We solve the phonon Boltzmann transport equation and calculate the thermal conductivity in each grain, including scattering from the grain boundary roughness. Thermal transport in the large-area sample is considered in the Corbino-membrane geometry, with heat flowing through a network of thermal resistors and away from a pointlike heat source. The thermal transport in polycrystalline graphene is shown to be highly anisotropic, depending on the individual properties of the grains (their size and boundary roughness), as well as on grain connectivity. Strongest heat conduction occurs along large-grain filaments, while the heat flow is blocked through regions containing predominantly small grains. We discuss how thermal transport in CVD graphene can be tailored by controlling grain disorder.

  20. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    SciTech Connect

    Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H.

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  1. Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

    NASA Astrophysics Data System (ADS)

    Gong, Yongji; Shi, Gang; Zhang, Zhuhua; Zhou, Wu; Jung, Jeil; Gao, Weilu; Ma, Lulu; Yang, Yang; Yang, Shubin; You, Ge; Vajtai, Robert; Xu, Qianfan; MacDonald, Allan H.; Yakobson, Boris I.; Lou, Jun; Liu, Zheng; Ajayan, Pulickel M.

    2014-01-01

    Graphene and hexagonal boron nitride are typical conductor and insulator, respectively, while their hybrids hexagonal boron carbonitride are promising as a semiconductor. Here we demonstrate a direct chemical conversion reaction, which systematically converts the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform boron nitride and boron carbonitride structures without disrupting the structural integrity of the original graphene templates. We synthesize high-quality atomic layer films with boron-, nitrogen- and carbon-containing atomic layers with full range of compositions. Using this approach, the electrical resistance, carrier mobilities and bandgaps of these atomic layers can be tuned from conductor to semiconductor to insulator. Combining this technique with lithography, local conversion could be realized at the nanometre scale, enabling the fabrication of in-plane atomic layer structures consisting of graphene, boron nitride and boron carbonitride. This is a step towards scalable synthesis of atomically thin two-dimensional integrated circuits.

  2. Development of large Area Covering Height Model

    NASA Astrophysics Data System (ADS)

    Jacobsen, K.

    2014-04-01

    Height information is a basic part of topographic mapping. Only in special areas frequent update of height models is required, usually the update cycle is quite lower as for horizontal map information. Some height models are available free of charge in the internet; for commercial height models a fee has to be paid. Mostly digital surface models (DSM) with the height of the visible surface are given and not the bare ground height, as required for standard mapping. Nevertheless by filtering of DSM, digital terrain models (DTM) with the height of the bare ground can be generated with the exception of dense forest areas where no height of the bare ground is available. These height models may be better as the DTM of some survey administrations. In addition several DTM from national survey administrations are classified, so as alternative the commercial or free of charge available information from internet can be used. The widely used SRTM DSM is available also as ACE-2 GDEM corrected by altimeter data for systematic height errors caused by vegetation and orientation errors. But the ACE-2 GDEM did not respect neighbourhood information. With the worldwide covering TanDEM-X height model, distributed starting 2014 by Airbus Defence and Space (former ASTRIUM) as WorldDEM, higher level of details and accuracy is reached as with other large area covering height models. At first the raw-version of WorldDEM will be available, followed by an edited version and finally as WorldDEM-DTM a height model of the bare ground. With 12 m spacing and a relative standard deviation of 1.2 m within an area of 1° x 1° an accuracy and resolution level is reached, satisfying also for larger map scales. For limited areas with the HDEM also a height model with 6 m spacing and a relative vertical accuracy of 0.5 m can be generated on demand. By bathymetric LiDAR and stereo images also the height of the sea floor can be determined if the water has satisfying transparency. Another method of getting

  3. Development of a Large-Area Ultracold Neutron Detector

    NASA Astrophysics Data System (ADS)

    Stoffel, Jenna; Liu, Chen-Yu; UCN Tau Collaboration

    2015-10-01

    To improve our knowledge in particle physics and cosmology, including big-bang nucleosynthesis, we need a more precise and accurate measurement of the lifetime of free neutrons. Though there have been many attempts to measure the neutron lifetime, discrepancies exist between the two major experimental techniques of the beam and the bottle methods. To resolve this discrepancy, the UCN τ experiment will trap ultracold neutrons (UCNs) to perform lifetime measurements to the 1-second level. To accomplish this goal, we are developing a large-area, high-efficiency UCN detector. We construct a scintillating UCN detector by evaporating a thin film of boron-10 onto an airbrushed layer of zinc sulfide (ZnS); the 10B-coated ZnS scintillating film is then glued to wavelength-shifting plastic, which acts as a light guide to direct photons into modern silicon photomultipliers. This new detector has similar efficiency and background noise as the previously-used ion gas detectors, but can be easily scaled up to cover large areas for many applications. The new detector opens up exciting new ways to study systematic effects, as they hold the key to the interpretation of neutron lifetime.

  4. Conduction mechanisms in thin atomic layer deposited Al{sub 2}O{sub 3} layers

    SciTech Connect

    Spahr, Holger; Montzka, Sebastian; Reinker, Johannes; Hirschberg, Felix; Kowalsky, Wolfgang; Johannes, Hans-Hermann

    2013-11-14

    Thin Al{sub 2}O{sub 3} layers of 2–135 nm thickness deposited by thermal atomic layer deposition at 80 °C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current.

  5. Gamma-Ray Large Area Space Telescope- GLAST Mission Overview

    NASA Technical Reports Server (NTRS)

    Moiseev, Alexander A.

    2007-01-01

    This viewgraph presentation reviews the Gamma-ray Large Area Space Telescope (GLAST), and the instrumentation that will be on the spacecraft: Large Area Telescope (LAT) and GLAST Burst Monitor (GBM). The presentation revierws in detail the LAT instrument.

  6. Large Area Printing of 3D Photonic Crystals

    NASA Astrophysics Data System (ADS)

    Watkins, James J.; Beaulieu, Michael R.; Hendricks, Nicholas R.; Kothari, Rohit

    2014-03-01

    We have developed a readily scalable print, lift, and stack approach for producing large area, 3D photonic crystal (PC) structures. UV-assisted nanoimprint lithography (UV-NIL) was used to pattern grating structures comprised of highly filled nanoparticle polymer composite resists with tune-able refractive indices (RI). The gratings were robust and upon release from a support substrate were oriented and stacked to yield 3D PCs. The RI of the composite resists was tuned between 1.58 and 1.92 at 800 nm while maintaining excellent optical transparency. The grating structure dimensions, line width, depth, and pitch, were easily varied by simply changing the imprint mold. For example, a 6 layer log-pile stack was prepared using a composite resist a RI of 1.72 yielding 72 % reflection at 900 nm. The process is scalable for roll-to-roll (R2R) production. Center for Hierarchical Manufacturing - an NSF Nanoscale Science and Engineering Center.

  7. Large area substrate for surface enhanced Raman spectroscopy (SERS) using glass-drawing technique

    DOEpatents

    Ivanov, Ilia N.; Simpson, John T.

    2012-06-26

    A method of making a large area substrate comprises drawing a plurality of tubes to form a plurality of drawn tubes, and cutting the plurality of drawn tubes into cut drawn tubes. Each cut drawn tube has a first end and a second end along the longitudinal direction of the respective cut drawn tube. The cut drawn tubes collectively have a predetermined periodicity. The method of making a large area substrate also comprises forming a metal layer on the first ends of the cut drawn tubes to provide a large area substrate.

  8. Atomic Layer Deposition on Carbon Nanotubes and their Assemblies

    NASA Astrophysics Data System (ADS)

    Stano, Kelly Lynn

    Global issues related to energy and the environment have motivated development of advanced material solutions outside of traditional metals ceramics, and polymers. Taking inspiration from composites, where the combination of two or more materials often yields superior properties, the field of organic-inorganic hybrids has recently emerged. Carbon nanotube (CNT)-inorganic hybrids have drawn widespread and increasing interest in recent years due to their multifunctionality and potential impact across several technologically important application areas. Before the impacts of CNT-inorganic hybrids can be realized however, processing techniques must be developed for their scalable production. Optimization in chemical vapor deposition (CVD) methods for synthesis of CNTs and vertically aligned CNT arrays has created production routes both high throughput and economically feasible. Additionally, control of CVD parameters has allowed for growth of CNT arrays that are able to be drawn into aligned sheets and further processed to form a variety of aligned 1, 2, and 3-dimensional bulk assemblies including ribbons, yarns, and foams. To date, there have only been a few studies on utilizing these bulk assemblies for the production of CNT-inorganic hybrids. Wet chemical methods traditionally used for fabricating CNT-inorganic hybrids are largely incompatible with CNT assemblies, since wetting and drying the delicate structures with solvents can destroy their structure. It is therefore necessary to investigate alternative processing strategies in order to advance the field of CNT-inorganic hybrids. In this dissertation, atomic layer deposition (ALD) is evaluated as a synthetic route for the production of large-scale CNT-metal oxide hybrids as well as pure metal oxide architectures utilizing CNT arrays, ribbons, and ultralow density foams as deposition templates. Nucleation and growth behavior of alumina was evaluated as a function of CNT surface chemistry. While highly graphitic

  9. Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations

    PubMed Central

    Resta, Andrea; Leoni, Thomas; Barth, Clemens; Ranguis, Alain; Becker, Conrad; Bruhn, Thomas; Vogt, Patrick; Le Lay, Guy

    2013-01-01

    Silicene, the considered equivalent of graphene for silicon, has been recently synthesized on Ag(111) surfaces. Following the tremendous success of graphene, silicene might further widen the horizon of two-dimensional materials with new allotropes artificially created. Due to stronger spin-orbit coupling, lower group symmetry and different chemistry compared to graphene, silicene presents many new interesting features. Here, we focus on very important aspects of silicene layers on Ag(111): First, we present scanning tunneling microscopy (STM) and non-contact Atomic Force Microscopy (nc-AFM) observations of the major structures of single layer and bi-layer silicene in epitaxy with Ag(111). For the (3 × 3) reconstructed first silicene layer nc-AFM represents the same lateral arrangement of silicene atoms as STM and therefore provides a timely experimental confirmation of the current picture of the atomic silicene structure. Furthermore, both nc-AFM and STM give a unifying interpretation of the second layer (√3 × √3)R ± 30° structure. Finally, we give support to the conjectured possible existence of less stable, ~2% stressed, (√7 × √7)R ± 19.1° rotated silicene domains in the first layer. PMID:23928998

  10. Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene.

    PubMed

    Amani, Matin; Burke, Robert A; Proie, Robert M; Dubey, Madan

    2015-03-20

    Two-dimensional materials, such as graphene and its analogues, have been investigated by numerous researchers for high performance flexible and conformal electronic systems, because they offer the ultimate level of thickness scaling, atomically smooth surfaces and high crystalline quality. Here, we use layer-by-layer transfer of large area molybdenum disulphide (MoS2) and graphene grown by chemical vapor deposition (CVD) to demonstrate electronics on flexible polyimide (PI) substrates. On the same PI substrate, we are able to simultaneously fabricate MoS2 based logic, non-volatile memory cells with graphene floating gates, photo-detectors and MoS2 transistors with tunable source and drain contacts. We are also able to demonstrate that these flexible heterostructure devices have very high electronic performance, comparable to four point measurements taken on SiO2 substrates, with on/off ratios >10(7) and field effect mobilities as high as 16.4 cm(2) V(-1) s(-1). Additionally, the heterojunctions show high optoelectronic sensitivity and were operated as photodetectors with responsivities over 30 A W(-1). Through local gating of the individual graphene/MoS2 contacts, we are able to tune the contact resistance over the range of 322-1210 Ω mm for each contact, by modulating the graphene work function. This leads to devices with tunable and multifunctional performance that can be implemented in a conformable platform. PMID:25709100

  11. Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene

    NASA Astrophysics Data System (ADS)

    Amani, Matin; Burke, Robert A.; Proie, Robert M.; Dubey, Madan

    2015-03-01

    Two-dimensional materials, such as graphene and its analogues, have been investigated by numerous researchers for high performance flexible and conformal electronic systems, because they offer the ultimate level of thickness scaling, atomically smooth surfaces and high crystalline quality. Here, we use layer-by-layer transfer of large area molybdenum disulphide (MoS2) and graphene grown by chemical vapor deposition (CVD) to demonstrate electronics on flexible polyimide (PI) substrates. On the same PI substrate, we are able to simultaneously fabricate MoS2 based logic, non-volatile memory cells with graphene floating gates, photo-detectors and MoS2 transistors with tunable source and drain contacts. We are also able to demonstrate that these flexible heterostructure devices have very high electronic performance, comparable to four point measurements taken on SiO2 substrates, with on/off ratios >107 and field effect mobilities as high as 16.4 cm2 V-1 s-1. Additionally, the heterojunctions show high optoelectronic sensitivity and were operated as photodetectors with responsivities over 30 A W-1. Through local gating of the individual graphene/MoS2 contacts, we are able to tune the contact resistance over the range of 322-1210 Ω mm for each contact, by modulating the graphene work function. This leads to devices with tunable and multifunctional performance that can be implemented in a conformable platform.

  12. Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization

    SciTech Connect

    Kraus, Theodore J.; Nepomnyashchii, Alexander B.; Parkinson, B. A.

    2015-01-15

    Atomic layer deposition was used to grow epitaxial layers of anatase (001) TiO{sub 2} on the surface of SrTiO{sub 3} (100) crystals with a 3% lattice mismatch. The epilayers grow as anatase (001) as confirmed by x-ray diffraction. Atomic force microscope images of deposited films showed epitaxial layer-by-layer growth up to about 10 nm, whereas thicker films, of up to 32 nm, revealed the formation of 2–5 nm anatase nanocrystallites oriented in the (001) direction. The anatase epilayers were used as substrates for dye sensitization. The as received strontium titanate crystal was not sensitized with a ruthenium-based dye (N3) or a thiacyanine dye (G15); however, photocurrent from excited state electron injection from these dyes was observed when adsorbed on the anatase epilayers. These results show that highly ordered anatase surfaces can be grown on an easily obtained substrate crystal.

  13. Fabrication of low-temperature solid oxide fuel cells with a nanothin protective layer by atomic layer deposition.

    PubMed

    Ji, Sanghoon; Chang, Ikwhang; Lee, Yoon Ho; Park, Joonho; Paek, Jun Yeol; Lee, Min Hwan; Cha, Suk Won

    2013-01-01

    Anode aluminum oxide-supported thin-film fuel cells having a sub-500-nm-thick bilayered electrolyte comprising a gadolinium-doped ceria (GDC) layer and an yttria-stabilized zirconia (YSZ) layer were fabricated and electrochemically characterized in order to investigate the effect of the YSZ protective layer. The highly dense and thin YSZ layer acted as a blockage against electron and oxygen permeation between the anode and GDC electrolyte. Dense GDC and YSZ thin films were fabricated using radio frequency sputtering and atomic layer deposition techniques, respectively. The resulting bilayered thin-film fuel cell generated a significantly higher open circuit voltage of approximately 1.07 V compared with a thin-film fuel cell with a single-layered GDC electrolyte (approximately 0.3 V). PMID:23342963

  14. Fabrication of low-temperature solid oxide fuel cells with a nanothin protective layer by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ji, Sanghoon; Chang, Ikwhang; Lee, Yoon Ho; Park, Joonho; Paek, Jun Yeol; Lee, Min Hwan; Cha, Suk Won

    2013-01-01

    Anode aluminum oxide-supported thin-film fuel cells having a sub-500-nm-thick bilayered electrolyte comprising a gadolinium-doped ceria (GDC) layer and an yttria-stabilized zirconia (YSZ) layer were fabricated and electrochemically characterized in order to investigate the effect of the YSZ protective layer. The highly dense and thin YSZ layer acted as a blockage against electron and oxygen permeation between the anode and GDC electrolyte. Dense GDC and YSZ thin films were fabricated using radio frequency sputtering and atomic layer deposition techniques, respectively. The resulting bilayered thin-film fuel cell generated a significantly higher open circuit voltage of approximately 1.07 V compared with a thin-film fuel cell with a single-layered GDC electrolyte (approximately 0.3 V).

  15. Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

    SciTech Connect

    Gajula, D. R. Baine, P.; Armstrong, B. M.; McNeill, D. W.; Modreanu, M.; Hurley, P. K.

    2014-01-06

    Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.

  16. Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO

    NASA Astrophysics Data System (ADS)

    Park, Kyung Sun; Kim, Sejoon; Kim, Hongbum; Kwon, Deokhyeon; Koo Lee, Yong-Eun; Min, Sung-Wook; Im, Seongil; Choi, Hyoung Joon; Lim, Seulky; Shin, Hyunjung; Koo, Sang Man; Sung, Myung Mo

    2015-10-01

    Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also

  17. Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition

    DOEpatents

    Cho, Jung Young; Ahn, Dongjoon; Salvador, James R.; Meisner, Gregory P.

    2016-06-07

    A thermoelectric material includes a substrate particle and a plurality of conformal oxide layers formed on the substrate particle. The plurality of conformal oxide layers has a total oxide layer thickness ranging from about 2 nm to about 20 nm. The thermoelectric material excludes oxide nanoparticles. A method of making the thermoelectric material is also disclosed herein.

  18. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

    PubMed

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2016-01-01

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene. PMID:26645468

  19. Structure of ultrathin oxide layers on metal surfaces from grazing scattering of fast atoms

    NASA Astrophysics Data System (ADS)

    Winter, H.; Seifert, J.; Blauth, D.; Busch, M.; Schüller, A.; Wethekam, S.

    2009-10-01

    The structure of ultrathin oxide layers grown on metal substrates is investigated by grazing scattering of fast atoms from the film surface. We present three recent experimental techniques which allow us to study the structure of ordered oxide films on metal substrates in detail. (1) A new variant of a triangulation method with fast atoms based on the detection of emitted electrons, (2) rainbow scattering under axial surface channeling conditions, and (3) fast atom diffraction (FAD) for studies on the structure of oxide films. Our examples demonstrate the attractive features of grazing fast atom scattering as a powerful analytical tool in surface physics.

  20. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling

    NASA Astrophysics Data System (ADS)

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2015-12-01

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene. Electronic supplementary information (ESI) available: Three TEM movies, additional TEM data corresponding to movies, calculated models, and lifetime results. See DOI: 10.1039/c5nr05913e

  1. LARGE AREA LANDMARKS - DYNAMAP V.12.2

    EPA Science Inventory

    GDT Large Area Landmarks represents common landmark areas within United States including military areas, prisons, educational institutions, amusement centers, government centers, sport centers, golf courses, and cemeteries.

  2. Large area x-ray detectors for cargo radiography

    NASA Astrophysics Data System (ADS)

    Bueno, C.; Albagli, D.; Bendahan, J.; Castleberry, D.; Gordon, C.; Hopkins, F.; Ross, W.

    2007-04-01

    Large area x-ray detectors based on phosphors coupled to flat panel amorphous silicon diode technology offer significant advances for cargo radiologic imaging. Flat panel area detectors provide large object coverage offering high throughput inspections to meet the high flow rate of container commerce. These detectors provide excellent spatial resolution when needed, and enhanced SNR through low noise electronics. If the resolution is reduced through pixel binning, further advances in SNR are achievable. Extended exposure imaging and frame averaging enables improved x-ray penetration of ultra-thick objects, or "select-your-own" contrast sensitivity at a rate many times faster than LDAs. The areal coverage of flat panel technology provides inherent volumetric imaging with the appropriate scanning methods. Flat panel area detectors have flexible designs in terms of electronic control, scintillator selection, pixel pitch, and frame rates. Their cost is becoming more competitive as production ramps up for the healthcare, nondestructive testing (NDT), and homeland protection industries. Typically used medical and industrial polycrystalline phosphor materials such as Gd2O2S:Tb (GOS) can be applied to megavolt applications if the phosphor layer is sufficiently thick to enhance x-ray absorption, and if a metal radiator is used to augment the quantum detection efficiency and reduce x-ray scatter. Phosphor layers ranging from 0.2-mm to 1-mm can be "sandwiched" between amorphous silicon flat panel diode arrays and metal radiators. Metal plates consisting of W, Pb or Cu, with thicknesses ranging from 0.25-mm to well over 1-mm can be used by covering the entire area of the phosphor plate. In some combinations of high density metal and phosphor layers, the metal plate provides an intensification of 25% in signal due to electron emission from the plate and subsequent excitation within the phosphor material. This further improves the SNR of the system.

  3. Direct patterning and biofunctionalization of a large-area pristine graphene sheet.

    PubMed

    Hong, Daewha; Bae, KiEun; Park, Duckshin; Kim, Houngkyung; Hong, Seok-Pyo; Kim, Mi-Hee; Lee, Bong Soo; Ko, Sangwon; Jeon, Seokwoo; Zheng, Xu; Yun, Wan Soo; Kim, Yang-Gyun; Choi, Insung S; Lee, Jungkyu K

    2015-03-01

    Direct patterning of streptavidin and NIH 3T3 fibroblast cells was successfully achieved over a large-area pristine graphene sheet on Si/SiO2 by aryl azide-based photografting with the conventional UV lithographic technique and surface-initiated, atom transfer radical polymerization of oligo(ethylene glycol) methacrylate. PMID:25488174

  4. Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO.

    PubMed

    Park, Kyung Sun; Kim, Sejoon; Kim, Hongbum; Kwon, Deokhyeon; Lee, Yong-Eun Koo; Min, Sung-Wook; Im, Seongil; Choi, Hyoung Joon; Lim, Seulky; Shin, Hyunjung; Koo, Sang Man; Sung, Myung Mo

    2015-11-14

    Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity. PMID:26452020

  5. Gigahertz Dielectric Polarization of Substitutional Single Niobium Atoms in Defective Graphitic Layers.

    PubMed

    Zhang, Xuefeng; Guo, Junjie; Guan, Pengfei; Qin, Gaowu; Pennycook, Stephen J

    2015-10-01

    We synthesize two Nb/C composites with an order of magnitude difference in the density of single niobium atoms substituted into defective graphitic layers. The concentration and sites of single Nb atoms are identified using aberration-corrected scanning transmission electron microscopy and density functional theory. Comparing the experimental complex permittivity spectra reveals that a representative dielectric resonance at ∼16  GHz originates from the intrinsic polarization of single Nb atom sites, which is confirmed by theoretical simulations. The single-atom dielectric resonance represents the physical limit of the electromagnetic response of condensed matter, and thus might open up a new avenue for designing electromagnetic wave absorption materials. Single-atom resonance also has important implications in understanding the correlation between the macroscopic dielectric behaviors and the atomic-scale structural origin. PMID:26551823

  6. Atomic Layer Deposition for the Conformal Coating of Nanoporous Materials

    DOE PAGESBeta

    Elam, Jeffrey W.; Xiong, Guang; Han, Catherine Y.; Wang, H. Hau; Birrell, James P.; Welp, Ulrich; Hryn, John N.; Pellin, Michael J.; Baumann, Theodore F.; Poco, John F.; et al

    2006-01-01

    Amore » tomic layer deposition ( ALD ) is ideal for applying precise and conformal coatings over nanoporous materials. We have recently used ALD to coat two nanoporous solids: anodic aluminum oxide ( AAO ) and silica aerogels. AAO possesses hexagonally ordered pores with diameters d ∼ 40 nm and pore length L ∼ 70 microns. The AAO membranes were coated by ALD to fabricate catalytic membranes that demonstrate remarkable selectivity in the oxidative dehydrogenation of cyclohexane.dditional AAO membranes coated with ALD Pd films show promise as hydrogen sensors. Silica aerogels have the lowest density and highest surface area of any solid material. Consequently, these materials serve as an excellent substrate to fabricate novel catalytic materials and gas sensors by ALD .« less

  7. Atomic diffusion across Ni50Ti50—Cu explosive welding interface: Diffusion layer thickness and atomic concentration distribution

    NASA Astrophysics Data System (ADS)

    Chen, Shi-Yang; Wu, Zhen-Wei; Liu, Kai-Xin

    2014-06-01

    Molecular dynamics simulations are carried out to study atomic diffusion in the explosive welding process of Ni50Ti50—Cu (at.%). By using a hybrid method which combines molecular dynamics simulation and classical diffusion theory, the thickness of the diffusion layer and the atomic concentration distribution across the welding interface are obtained. The results indicate that the concentration distribution curves at different times have a geometric similarity. According to the geometric similarity, the atomic concentration distribution at any time in explosive welding can be calculated. Ni50Ti50—Cu explosive welding and scanning electron microscope experiments are done to verify the results. The simulation results and the experimental results are in good agreement.

  8. Plasma-Assisted Synthesis of High-Mobility Atomically Layered Violet Phosphorus.

    PubMed

    Tsai, Hsu-Sheng; Lai, Chih-Chung; Hsiao, Ching-Hung; Medina, Henry; Su, Teng-Yu; Ouyang, Hao; Chen, Tai-Hsiang; Liang, Jenq-Horng; Chueh, Yu-Lun

    2015-07-01

    Two-dimensional layered materials such as graphene, transition metal dichalcogenides, and black phosphorus have demonstrated outstanding properties due to electron confinement as the thickness is reduced to atomic scale. Among the phosphorus allotropes, black phosphorus, and violet phosphorus possess layer structure with the potential to be scaled down to atomically thin film. For the first time, the plasma-assisted synthesis of atomically layered violet phosphorus has been achieved. Material characterization supports the formation of violet phosphorus/InN over InP substrate where the layer structure of violet phosphorus is clearly observed. The identification of the crystal structure and lattice constant ratifies the formation of violet phosphorus indeed. The critical concept of this synthesis method is the selective reaction induced by different variations of Gibbs free energy (ΔG) of reactions. Besides, the Hall mobility of the violet phosphorus on the InP substrate greatly increases over the theoretical values of InP bulk material without much reduction in the carrier concentration, suggesting that the mobility enhancement results from the violet phosphorus layers. Furthermore, this study demonstrates a low-cost technique with high compatibility to synthesize the high-mobility atomically layered violet phosphorus and open the space for the study of the fundamental properties of this intriguing material as a new member of the fast growing family of 2D crystals. PMID:26070035

  9. Antireflective conducting nanostructures with an atomic layer deposited an AlZnO layer on a transparent substrate

    NASA Astrophysics Data System (ADS)

    Park, Hyun-Woo; Ji, Seungmuk; Herdini, Diptya Suci; Lim, Hyuneui; Park, Jin-Seong; Chung, Kwun-Bum

    2015-12-01

    The antireflective conducting nanostructures on a transparent substrate were shown to have enhanced optical and electrical properties via colloidal lithography and atomic layer deposition. The conformal AlZnO layer on a transparent nanostructured substrate exhibited 5.52 × 10-4 Ω cm in resistivity and 88% in average visible transmittance, both of which were superior to those of a flat transparent conducting substrate. The improvement of transparency was explained by the gradual changes of the refractive index in the film depth direction. The decrease in electrical resistivity is strongly correlated to the increased surface area with the nanostructure and the change of chemical bonding states.

  10. Synthesis and Transfer of Large-Area Monolayer WS2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates.

    PubMed

    Xu, Zai-Quan; Zhang, Yupeng; Lin, Shenghuang; Zheng, Changxi; Zhong, Yu Lin; Xia, Xue; Li, Zhipeng; Sophia, Ponraj Joice; Fuhrer, Michael S; Cheng, Yi-Bing; Bao, Qiaoliang

    2015-06-23

    Two-dimensional layered transition metal dichalcogenides (TMDs) show intriguing potential for optoelectronic devices due to their exotic electronic and optical properties. Only a few efforts have been dedicated to large-area growth of TMDs. Practical applications will require improving the efficiency and reducing the cost of production, through (1) new growth methods to produce large size TMD monolayer with less-stringent conditions, and (2) nondestructive transfer techniques that enable multiple reuse of growth substrate. In this work, we report to employ atmospheric pressure chemical vapor deposition (APCVD) for the synthesis of large size (>100 μm) single crystals of atomically thin tungsten disulfide (WS2), a member of TMD family, on sapphire substrate. More importantly, we demonstrate a polystyrene (PS) mediated delamination process via capillary force in water which reduces the etching time in base solution and imposes only minor damage to the sapphire substrate. The transferred WS2 flakes are of excellent continuity and exhibit comparable electron mobility after several growth cycles on the reused sapphire substrate. Interestingly, the photoluminescence emission from WS2 grown on the recycled sapphire is much higher than that on fresh sapphire, possibly due to p-type doping of monolayer WS2 flakes by a thin layer of water intercalated at the atomic steps of the recycled sapphire substrate. The growth and transfer techniques described here are expected to be applicable to other atomically thin TMD materials. PMID:25961515

  11. Characterization of large area, thick, and segmented silicon detector for electron and proton detection from neutron beta decay experiments in the cold and ultracold energies

    NASA Astrophysics Data System (ADS)

    Salas Bacci, Americo; McGaughey, Patrick; Baessler, Stefan; Broussard, Leah; Makela, Mark; Mirabal, Jacqueline; Pattie, Robert; Pocanic, Dinko; Hoedl, Seth; Sjue, Sky; Penttila, Seppo; Hasan, Syed; Wilburn, Scott; Young, Albert; Zeck, Bryan; Wang, Zhehui

    2012-10-01

    The ``Nab'' and ``UCNB'' collaborations have proposed to measure the correlation parameters in neutron β-decay at Oak Ridge and Los Alamos National Laboratory, using a novel detector design and electromagnetic spectrometers. Two large area, thick, hexagonal-segmented Silicon detectors containing 128 pixels per detector are going to be used to detect the electron and proton from neutron decay. Both Silicon detectors are connected by magnetic field lines of few Tesla field strength, and set on an electrostatic potential, such that protons can be accelerated up to 30 keV in order to be detected. We report the characterization, operation, proton detection from 15 to 30 keV, total pulse height defect, computation of atomic scattering defect, recombination defect, and evaluation of dead layer for these large area and thick Silicon detectors.

  12. An atomic layer deposition chamber for in situ x-ray diffraction and scattering analysis

    SciTech Connect

    Geyer, Scott M.; Methaapanon, Rungthiwa; Kim, Woo-Hee; Bent, Stacey F.; Johnson, Richard W.; Van Campen, Douglas G.; Metha, Apurva

    2014-05-15

    The crystal structure of thin films grown by atomic layer deposition (ALD) will determine important performance properties such as conductivity, breakdown voltage, and catalytic activity. We report the design of an atomic layer deposition chamber for in situ x-ray analysis that can be used to monitor changes to the crystal structural during ALD. The application of the chamber is demonstrated for Pt ALD on amorphous SiO{sub 2} and SrTiO{sub 3} (001) using synchrotron-based high resolution x-ray diffraction, grazing incidence x-ray diffraction, and grazing incidence small angle scattering.

  13. Atomic layer epitaxy of YBaCuO for optoelectronic applications

    NASA Technical Reports Server (NTRS)

    Skogman, R. A.; Khan, M. A.; Van Hove, J. M.; Bhattarai, A.; Boord, W. T.

    1992-01-01

    An MOCVD-based atomic-layer epitaxy process is being developed as a potential solution to the problems of film-thickness and interface-abruptness control which are encountered when fabricating superconductor-insulator-superconductor devices using YBa2Cu3O(7-x). In initial studies, the atomic-layer MOCVD process yields superconducting YBa2Cu3O(7-x) films with substrate temperatures of 605 C during film growth, and no postdeposition anneal. The low temperature process yields a smooth film surface and can reduce interface degradation due to diffusion.

  14. Development of large area, pico-second resolution photo-detectors and associated readout electronics

    SciTech Connect

    Grabas, H.; Oberla, E.; Attenkoffer, K.; Bogdan, M.; Frisch, H. J.; Genat, J. F.; May, E. N.; Varner, G. S.; Wetstein, M.

    2011-07-01

    The Large Area Pico-second Photo-detectors described in this contribution incorporate a photo-cathode and a borosilicate glass capillary Micro-Channel Plate (MCP) pair functionalized by atomic layer deposition (ALD) of separate resistive and electron secondary emitters materials. They may be used for biomedical imaging purposes, a remarkable opportunity to apply technologies developed in HEP having the potential to make major advances in the medical world, in particular for Positron Emission Tomography (PET). If daisy-chained and coupled to fast transmission lines read at both ends, they could be implemented in very large dimensions. Initial testing with matched pairs of small glass capillary test has demonstrated gains of the order of 105 to 106. Compared to other fast imaging devices, these photo-detectors are expected to provide timing resolutions in the 10-100 ps range, and two-dimension position in the sub-millimeter range. A 6-channel readout ASIC has been designed in 130 nm CMOS technology and tested. As a result, fast analog sampling up to 17 GS/s has been obtained, the intrinsic analog bandwidth being presently under evaluation. The digitization in parallel of several cells in two microseconds allows getting off-chip digital data read at a maximum rate of 40 MHz. Digital Signal Processing of the sampled waveforms is expected achieving the timing and space resolutions obtained with digital oscilloscopes. (authors)

  15. Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies.

    PubMed

    Pawbake, Amit S; Pawar, Mahendra S; Jadkar, Sandesh R; Late, Dattatray J

    2016-02-01

    We investigate the growth mechanism and temperature dependent Raman spectroscopy of chemical vapor deposited large area monolayer of MoS2, MoSe2, WS2 and WSe2 nanosheets up to 70 μm in lateral size. Further, our temperature dependent Raman spectroscopy investigation shows that softening of Raman modes as temperature increases from 80 K to 593 K is due to the negative temperature coefficient and anharmonicity. The temperature dependent softening modes of chemical vapor deposited monolayers of all TMDCs were explained on the basis of a double resonance phonon process which is more active in an atomically thin sample. This process can also be fundamentally pertinent in other emerging two-dimensional layered and heterostructured materials. PMID:26782944

  16. The atomic layer deposition array defined by etch-back technique: a new method to fabricate TiO2 nanopillars, nanotubes and nanochannel arrays

    NASA Astrophysics Data System (ADS)

    Huang, Yujian; Pandraud, Grégory; Sarro, Pasqualina M.

    2012-12-01

    A novel fabrication method for nanostructures made of TiO2, a hard-to-etch material with very attractive optical, physical and chemical properties, is developed. This technique ‘atomic layer deposition array defined by etch-back’ (AARDE) enables the formation of a large area of perfectly ordered, high aspect ratio nanostructures, such as nanopillars, nanotubes and nanochannels. High quality functional surfaces and versatile structures with tunable dimensions on various substrates can be realized. With all the process steps being controllable and compatible with integrated circuits, high throughput and repeatability are achieved. To demonstrate the potential of this new technique, results for AARDE TiO2 nanopillar arrays as photonic crystals are also reported.

  17. Atomic-layer soft plasma etching of MoS2.

    PubMed

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya Ken

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

  18. Atomic-layer soft plasma etching of MoS2

    PubMed Central

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

  19. Atomic-layer soft plasma etching of MoS2

    NASA Astrophysics Data System (ADS)

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.

  20. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    SciTech Connect

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe; Blasco, Nicolas

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  1. Study of HfO2 films deposited on strained Si1-xGex layers by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Damlencourt, J.-F.; Weber, O.; Renault, O.; Hartmann, J.-M.; Poggi, C.; Ducroquet, F.; Billon, T.

    2004-11-01

    This paper focuses on the growth of HfO2 by atomic layer deposition (ALD) at 350°C on pseudomorphic Si1-xGex thin films (x =15% and 25%). Two different Si1-xGex surface preparations (chemical oxidation and HF "last" treatment) have been investigated to obtain the highest HfO2 film quality with the thinnest interfacial layer possible. The initial stages of the ALD growth on these different surfaces (i.e., hafnium adsorption and chlorine contamination) analyzed by total x-ray fluorescence show that HF last treated Si1-xGex surfaces are more convenient than chemically oxidized ones to grow high quality HfO2 layers. This result is confirmed by x-ray photoelectron spectroscopy investigations of the interfacial layer structure as a function of the surface treatment. As-deposited and annealed thin HfO2 layers (2.5, 3.5, 5, and 8nm) grown on HF last treated Si0.75Ge0.25 strained layers were analyzed by mercury probe. An equivalent oxide thickness as low as 0.7nm was obtained for a 2.5nm as-deposited HfO2 film. Mobility results show that a 22% mobility enhancement is obtained in the entire effective field range with HfO2/SiGe compared to the HfO2/Si reference.

  2. Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies

    NASA Astrophysics Data System (ADS)

    Pawbake, Amit S.; Pawar, Mahendra S.; Jadkar, Sandesh R.; Late, Dattatray J.

    2016-01-01

    We investigate the growth mechanism and temperature dependent Raman spectroscopy of chemical vapor deposited large area monolayer of MoS2, MoSe2, WS2 and WSe2 nanosheets up to 70 μm in lateral size. Further, our temperature dependent Raman spectroscopy investigation shows that softening of Raman modes as temperature increases from 80 K to 593 K is due to the negative temperature coefficient and anharmonicity. The temperature dependent softening modes of chemical vapor deposited monolayers of all TMDCs were explained on the basis of a double resonance phonon process which is more active in an atomically thin sample. This process can also be fundamentally pertinent in other emerging two-dimensional layered and heterostructured materials.We investigate the growth mechanism and temperature dependent Raman spectroscopy of chemical vapor deposited large area monolayer of MoS2, MoSe2, WS2 and WSe2 nanosheets up to 70 μm in lateral size. Further, our temperature dependent Raman spectroscopy investigation shows that softening of Raman modes as temperature increases from 80 K to 593 K is due to the negative temperature coefficient and anharmonicity. The temperature dependent softening modes of chemical vapor deposited monolayers of all TMDCs were explained on the basis of a double resonance phonon process which is more active in an atomically thin sample. This process can also be fundamentally pertinent in other emerging two-dimensional layered and heterostructured materials. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07401k

  3. Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition

    SciTech Connect

    Ahn, Cheol Hyoun; Hee Kim, So; Gu Yun, Myeong; Koun Cho, Hyung

    2014-12-01

    In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δ 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.

  4. Atomic migration of carbon in hard turned layers of carburized bearing steel

    SciTech Connect

    Bedekar, Vikram; Poplawsky, Jonathan D.; Guo, Wei; Shivpuri, Rajiv; Scott Hyde, R.

    2016-01-01

    In grain finement and non-equilibrium there is carbon segregation within grain boundaries alters the mechanical performance of hard turning layers in carburized bearing steel. Moreover, an atom probe tomography (APT) study on the nanostructured hard turning layers reveals carbon migration to grain boundaries as a result of carbide decomposition during severe plastic deformation. In addition, samples exposed to different cutting speeds show that the carbon migration rate increases with the cutting speed. For these two effects lead to an ultrafine carbon network structure resulting in increased hardness and thermal stability in the severely deformed surface layer.

  5. Modeling Mechanism and Growth Reactions for New Nanofabrication Processes by Atomic Layer Deposition.

    PubMed

    Elliott, Simon D; Dey, Gangotri; Maimaiti, Yasheng; Ablat, Hayrensa; Filatova, Ekaterina A; Fomengia, Glen N

    2016-07-01

    Recent progress in the simulation of the chemistry of atomic layer deposition (ALD) is presented for technologically important materials such as alumina, silica, and copper metal. Self-limiting chemisorption of precursors onto substrates is studied using density functional theory so as to determine reaction pathways and aid process development. The main challenges for the future of ALD modeling are outlined. PMID:26689290

  6. Transparent conductive gas-permeation barriers on plastics by atomic layer deposition.

    PubMed

    Chou, Chun-Ting; Yu, Pei-Wei; Tseng, Ming-Hung; Hsu, Che-Chen; Shyue, Jing-Jong; Wang, Ching-Chiun; Tsai, Feng-Yu

    2013-03-25

    A mixed-deposition atomic layer deposition process produces Hf:ZnO films with uniform dopant distribution and high electrical conductivity (resistivity = 4.5 × 10(-4) W cm), optical transparency (>85% from 400-1800 nm), and moisture-barrier property (water vapor transmission rate = 6.3 × 10(-6) g m(-2) day(-1)). PMID:23386315

  7. Atomic layer deposition-based functionalization of materials for medical and environmental health applications

    PubMed Central

    Narayan, Roger J.; Adiga, Shashishekar P.; Pellin, Michael J.; Curtiss, Larry A.; Hryn, Alexander J.; Stafslien, Shane; Chisholm, Bret; Shih, Chun-Che; Shih, Chun-Ming; Lin, Shing-Jong; Su, Yea-Yang; Jin, Chunming; Zhang, Junping; Monteiro-Riviere, Nancy A.; Elam, Jeffrey W.

    2010-01-01

    Nanoporous alumina membranes exhibit high pore densities, well-controlled and uniform pore sizes, as well as straight pores. Owing to these unusual properties, nanoporous alumina membranes are currently being considered for use in implantable sensor membranes and water purification membranes. Atomic layer deposition is a thin-film growth process that may be used to modify the pore size in a nanoporous alumina membrane while retaining a narrow pore distribution. In addition, films deposited by means of atomic layer deposition may impart improved biological functionality to nanoporous alumina membranes. In this study, zinc oxide coatings and platinum coatings were deposited on nanoporous alumina membranes by means of atomic layer deposition. PEGylated nanoporous alumina membranes were prepared by self-assembly of 1-mercaptoundec-11-yl hexa(ethylene glycol) on platinum-coated nanoporous alumina membranes. The pores of the PEGylated nanoporous alumina membranes remained free of fouling after exposure to human platelet-rich plasma; protein adsorption, fibrin networks and platelet aggregation were not observed on the coated membrane surface. Zinc oxide-coated nanoporous alumina membranes demonstrated activity against two waterborne pathogens, Escherichia coli and Staphylococcus aureus. The results of this work indicate that nanoporous alumina membranes may be modified using atomic layer deposition for use in a variety of medical and environmental health applications. PMID:20308114

  8. Solar hydrogen generation by silicon nanowires modified with platinum nanoparticle catalysts by atomic layer deposition.

    PubMed

    Dai, Pengcheng; Xie, Jin; Mayer, Matthew T; Yang, Xiaogang; Zhan, Jinhua; Wang, Dunwei

    2013-10-11

    Covered with Pt: A uniform catalyst profile that ensures effective radial charge collection from high-aspect-ratio Si nanowires was achieved by atomic layer deposition of Pt nanoparticles. The resulting photoelectrode permits the measurement of high photovoltages and low overpotentials, and leads to very good stability against photooxidation of Si nanowires in solar water-reduction reactions. PMID:24038639

  9. Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene.

    PubMed

    Roy, Amit K; Dendooven, Jolien; Deduytsche, Davy; Devloo-Casier, Kilian; Ragaert, Kim; Cardon, Ludwig; Detavernier, Christophe

    2015-02-28

    This communication reports an approach based on plasma-enhanced atomic layer deposition of aluminium oxide for the functionalization of polytetrafluoroethylene (PTFE or "Teflon") surfaces. Alternating exposure of PTFE to oxygen plasma and trimethylaluminium causes a permanent hydrophilic effect, and a more than 10-fold improvement of the "glueability" of PTFE to aluminium. PMID:25631168

  10. Synthesis and Characterizations of Two-Dimensional Atomic Layers and Their Heterostructures

    NASA Astrophysics Data System (ADS)

    Lee, Yi-Hsien

    2015-03-01

    Monolayers of van der Waals (vdw) materials, including graphene, h-BN, and MoS2, have been highlighted regarding both scientific and industrial aspects due to novel physical phenomenon inherited from the reduced dimensionality. Layered transition metal dichalcogenides (TMD) atomic layers, being considered as the thinnest semiconductor, exhibit great potential for advanced nano-devices. Monolayer in the class of offered a burgeoning field in fundamental physics, energy harvesting, electronics and optoelectronics. Recently, atomically thin heterostructures of TMD monolayer with various geometrical and energy band alignments are expected to be the key materials for next generation flexible optoelectronics. The individual TMD monolayers can be adjoined vertically or laterally to construct diverse heterostructures which are difficult to reach with the laborious pick up-and-transfer method of the exfoliated flakes. The ability to produce copious amounts of high quality layered heterostructures on diverse surfaces is highly desirable but it has remained a challenging issue. Here, we have achieved a direct synthesis of various heterostructures of monolayer TMDs. The synthesis was performed using ambient-pressure CVD with aromatic molecules as seeding promoters. We discuss possible growth behaviors, and we examine the symmetry and the interface of these heterostructures using optical analysis and atomic-resolution scanning TEM. Our method offers a controllable synthesis of to obtain high-quality heterostructures of TMD atomic layers with diverse interface geometry.

  11. Attribution and Characterisation of Sclerophyll Forested Landscapes Over Large Areas

    NASA Astrophysics Data System (ADS)

    Jones, Simon; Soto-Berelov, Mariela; Suarez, Lola; Wilkes, Phil; Woodgate, Will; Haywood, Andrew

    2016-06-01

    conducted a total of 67 ground-based method-to-method pairwise comparisons across 11 plots in five sites, incorporating the previously mentioned LAI methods. Out of the 67 comparisons, 29 had an RMSE ≥ 0.5 LAIe. This has important implications for the validation of remotely sensed products since ground based techniques themselves exhibit LAI variations greater than internationally recommended guidelines for satellite product accuracies. 2. Two methods of canopy height derivation are proposed and tested over a large area (4 Million Ha). 99th percentile maximum height achieved a RMSE of 6.6%, whilst 95th percentile dominant height a RMSE = 10.3%. Vertical canopy complexity (i.e. the number of forest layers of strata) was calculated as the local maxima of vegetation density within the LiDAR canopy profile and determined using a cubic spline smoothing of Pgap. This was then validated against in-situ and LiDAR observations of canopy strata with an RMSE 0.39 canopy layers. 3. Preliminary results are presented of landcover characterisation using LandTrendr analysis of Landsat LEDAPS data. kNN is then used to link these features to a dense network of 800 field plots sites.

  12. Protection of Polymers from the Space Environment by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Lindholm, Ned F.; Zhang, Jianming; Minton, Timothy K.; O'Patchen, Jennifer; George, Steven M.; Groner, Markus D.

    2009-01-01

    Polymers in space may be subjected to a barrage of incident atoms, photons, and/or ions. For example, oxygen atoms can etch and oxidize these materials. Photons may act either alone or in combination with oxygen atoms to degrade polymers and paints and thus limit their usefulness. Colors fade under the intense vacuum ultraviolet (VUV) solar radiation. Ions can lead to the build-up of static charge on polymers. Atomic layer deposition (ALD) techniques can provide coatings that could mitigate many challenges for polymers in space. ALD is a gas-phase technique based on two sequential, self-limiting surface reactions, and it can deposit very uniform, conformal, and pinhole-free films with atomic layer control. We have studied the efficacy of various ALD coatings to protect Kapton® polyimide, FEP Teflon®, and poly(methyl methacrylate) films from atomic-oxygen and VUV attack. Atomic-oxygen and VUV studies were conducted with the use of a laser-breakdown source for hyperthermal O atoms and a D2 lamp as a source of VUV light. These studies used a quartz crystal microbalance (QCM) to monitor mass loss in situ, as well as surface profilometry and scanning electron microscopy to study the surface recession and morphology changes ex situ. Al2O3 ALD coatings applied to polyimide and FEP Teflon® films protected the underlying substrates from O-atom attack, and ZnO coatings protected the poly(methyl methacrylate) substrate from VUV-induced damage.

  13. Large-area settlement pattern recognition from Landsat-8 data

    NASA Astrophysics Data System (ADS)

    Wieland, Marc; Pittore, Massimiliano

    2016-09-01

    The study presents an image processing and analysis pipeline that combines object-based image analysis with a Support Vector Machine to derive a multi-layered settlement product from Landsat-8 data over large areas. 43 image scenes are processed over large parts of Central Asia (Southern Kazakhstan, Kyrgyzstan, Tajikistan and Eastern Uzbekistan). The main tasks tackled by this work include built-up area identification, settlement type classification and urban structure types pattern recognition. Besides commonly used accuracy assessments of the resulting map products, thorough performance evaluations are carried out under varying conditions to tune algorithm parameters and assess their applicability for the given tasks. As part of this, several research questions are being addressed. In particular the influence of the improved spatial and spectral resolution of Landsat-8 on the SVM performance to identify built-up areas and urban structure types are evaluated. Also the influence of an extended feature space including digital elevation model features is tested for mountainous regions. Moreover, the spatial distribution of classification uncertainties is analyzed and compared to the heterogeneity of the building stock within the computational unit of the segments. The study concludes that the information content of Landsat-8 images is sufficient for the tested classification tasks and even detailed urban structures could be extracted with satisfying accuracy. Freely available ancillary settlement point location data could further improve the built-up area classification. Digital elevation features and pan-sharpening could, however, not significantly improve the classification results. The study highlights the importance of dynamically tuned classifier parameters, and underlines the use of Shannon entropy computed from the soft answers of the SVM as a valid measure of the spatial distribution of classification uncertainties.

  14. Interactions between fluorescence of atomically layered graphene oxide and metallic nanoparticles

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Li, Shao-Sian; Yeh, Yun-Chieh; Yu, Chen-Chieh; Chen, Hsuen-Li; Li, Feng-Chieh; Chang, Yu-Ming; Chen, Chun-Wei

    2013-01-01

    Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp2- and sp3-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the interactions between the fluorescence of two-dimensional layered materials and the LSPR effect.Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp2- and sp3-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the

  15. Dimensional crossover of electron weak localization in ZnO/TiOx stacked layers grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Bhartiya, S.; Gupta, M.; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    We report on the dimensional crossover of electron weak localization in ZnO/TiOx stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiOx on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ˜6-65 nm by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R⊙) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R⊙(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R⊙ and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiOx stacked layers which have potential applications in the field of transparent oxide electronics.

  16. Analysis of layer-by-layer thin-film oxide growth using RHEED and Atomic Force Microscopy

    NASA Astrophysics Data System (ADS)

    Adler, Eli; Sullivan, M. C.; Gutierrez-Llorente, Araceli; Joress, H.; Woll, A.; Brock, J. D.

    2015-03-01

    Reflection high energy electron diffraction (RHEED) is commonly used as an in situ analysis tool for layer-by-layer thin-film growth. Atomic force microscopy is an equally common ex situ tool for analysis of the film surface, providing visual evidence of the surface morphology. During growth, the RHEED intensity oscillates as the film surface changes in roughness. It is often assumed that the maxima of the RHEED oscillations signify a complete layer, however, the oscillations in oxide systems can be misleading. Thus, using only the RHEED maxima is insufficient. X-ray reflectivity can also be used to analyze growth, as the intensity oscillates in phase with the smoothness of the surface. Using x-ray reflectivity to determine the thin film layer deposition, we grew three films where the x-ray and RHEED oscillations were nearly exactly out of phase and halted deposition at different points in the growth. Pre-growth and post-growth AFM images emphasize the fact that the maxima in RHEED are not a justification for determining layer completion. Work conducted at the Cornell High Energy Synchrotron Source (CHESS) supported by NSF Awards DMR-1332208 and DMR-0936384 and the Cornell Center for Materials Research Shared Facilities are supported through DMR-1120296.

  17. Atom probe tomography of compositional fluctuation in GaInN layers

    NASA Astrophysics Data System (ADS)

    Kanitani, Yuya; Tanaka, Shinji; Tomiya, Shigetaka; Ohkubo, Tadakatsu; Hono, Kazuhiro

    2016-05-01

    Thin Ga1‑ x In x N layers with various indium compositions x (0.08,0.15,0.25) were examined by high-angle annular dark-field scanning transmission electron microscopy and atom probe tomography. Although nanoscale compositional fluctuation was observed in all Ga1‑ x In x N layers, no appreciable phase separation was observed. Since Ga1‑ x In x N layers were coherently grown on underlying GaN layers, it is considered that the elastic strain constrains phase separation in the Ga1‑ x In x N layers and that compositional fluctuations develop in order to minimize the local strain energy. The measured period of compositional fluctuations ranged from 3.4 to 4.9 nm and decreased with growth temperature (T growth). This tendency is suggested to be dominated by the surface migration length of the adatom during the crystal growth.

  18. Laser processing system development of large area and high precision

    NASA Astrophysics Data System (ADS)

    Park, Hyeongchan; Ryu, Kwanghyun; Hwang, Taesang

    2013-03-01

    As industry of PCB (Printed Circuit Board) and display growing, this industry requires an increasingly high-precision quality so current cutting process in industry is preferred laser machining than mechanical machining. Now, laser machining is used almost "step and repeat" method in large area, but this method has a problem such as cutting quality in the continuity of edge parts, cutting speed and low productivity. To solve these problems in large area, on-the-fly (stagescanner synchronized system) is gradually increasing. On-the-fly technology is able to process large area with high speed because of stage-scanner synchronized moving. We designed laser-based high precision system with on-the-fly. In this system, we used UV nano-second pulse laser, power controller and scanner with telecentric f-theta lens. The power controller is consisted of HWP(Half Wave Plate), thin film plate polarizer, photo diode, micro step motor and control board. Laser power is possible to monitor real-time and adjust precision power by using power controller. Using this machine, we tested cutting of large area coverlay and sheet type large area PCB by applying on-the-fly. As a result, our developed machine is possible to process large area without the problem of the continuity of edge parts and by high cutting speed than competitor about coverlay.

  19. Raman scattering and anomalous Stokes–anti-Stokes ratio in MoTe2 atomic layers

    PubMed Central

    Goldstein, Thomas; Chen, Shao-Yu; Tong, Jiayue; Xiao, Di; Ramasubramaniam, Ashwin; Yan, Jun

    2016-01-01

    Stokes and anti-Stokes Raman scattering are performed on atomic layers of hexagonal molybdenum ditelluride (MoTe2), a prototypical transition metal dichalcogenide (TMDC) semiconductor. The data reveal all six types of zone center optical phonons, along with their corresponding Davydov splittings, which have been challenging to see in other TMDCs. We discover that the anti-Stokes Raman intensity of the low energy layer-breathing mode becomes more intense than the Stokes peak under certain experimental conditions, and find the effect to be tunable by excitation frequency and number of atomic layers. These observations are interpreted as a result of resonance effects arising from the C excitons in the vicinity of the Brillouin zone center in the photon-electron-phonon interaction process. PMID:27324297

  20. Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

    SciTech Connect

    Wei, Daming; Hossain, T; Garces, N. Y.; Nepal, N.; Meyer III, Harry M; Kirkham, Melanie J; Eddy, C.R., Jr.; Edgar, J H

    2013-01-01

    This paper reports on the influence of temperature on the structure, composition, and electrical properties of TiO2 thin films deposited on n-type silicon (100) by atomic layer deposition (ALD). TiO2 layers around 20nm thick, deposited at temperatures ranging from 100 to 300 C, were studied. Samples deposited at 250 C and 200 C had the most uniform coverage as determined by atomic force microscopy. The average carbon concentration throughout the oxide layer and at the TiO2/Si interface was lowest at 200 C. Metal oxide semiconductor capacitors (MOSCAPs) were fabricated, and profiled by capacitance-voltage techniques. Negligible hysteresis was observed from a capacitance-voltage plot and the capacitance in the accumulation region was constant for the sample prepared at a 200 C ALD growth temperature. The interface trap density was on the order of 1013 eV-1cm-2 regardless of the deposition temperature.

  1. Slot waveguide ring resonators coated by an atomic layer deposited organic/inorganic nanolaminate.

    PubMed

    Autere, A; Karvonen, L; Säynätjoki, A; Roussey, M; Färm, E; Kemell, M; Tu, X; Liow, T Y; Lo, G Q; Ritala, M; Leskelä, M; Honkanen, S; Lipsanen, H; Sun, Z

    2015-10-19

    In this study, slot waveguide ring resonators patterned on a silicon-on-insulator (SOI) wafer and coated with an atomic layer deposited nanolaminate consisting of alternating layers of tantalum pentoxide and polyimide were fabricated and characterized. To the best of our knowledge, this is the first demonstration of atomic layer deposition (ALD) of organic materials in waveguiding applications. In our nanolaminate ring resonators, the optical power is not only confined in the narrow central air slot but also in several parallel sub-10 nm wide vertical polyimide slots. This indicates that the mode profiles in the silicon slot waveguide can be accurately tuned by the ALD method. Our results show that ALD of organic and inorganic materials can be combined with conventional silicon waveguide fabrication techniques to create slot waveguide ring resonators with varying mode profiles. This can potentially open new possibilities for various photonic applications, such as optical sensing and all-optical signal processing. PMID:26480355

  2. Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition

    PubMed Central

    2012-01-01

    We demonstrate the morphological control method of ZnO nanostructures by atomic layer deposition (ALD) on an Al2O3/ZnO seed layer surface and the application of a hierarchical ZnO nanostructure for a photodetector. Two layers of ZnO and Al2O3 prepared using ALD with different pH values in solution coexisted on the alloy film surface, leading to deactivation of the surface hydroxyl groups. This surface complex decreased the ZnO nucleation on the seed layer surface, and thereby effectively screened the inherent surface polarity of ZnO. As a result, a 2-D zinc hydroxyl compound nanosheet was produced. With increasing ALD cycles of ZnO in the seed layer, the nanostructure morphology changes from 2-D nanosheet to 1-D nanorod due to the recovery of the natural crystallinity and polarity of ZnO. The thin ALD ZnO seed layer conformally covers the complex nanosheet structure to produce a nanorod, then a 3-D, hierarchical ZnO nanostructure was synthesized using a combined hydrothermal and ALD method. During the deposition of the ALD ZnO seed layer, the zinc hydroxyl compound nanosheets underwent a self-annealing process at 150 °C, resulting in structural transformation to pure ZnO 3-D nanosheets without collapse of the intrinsic morphology. The investigation on band electronic properties of ZnO 2-D nanosheet and 3-D hierarchical structure revealed noticeable variations depending on the richness of Zn-OH in each morphology. The improved visible and ultraviolet photocurrent characteristics of a photodetector with the active region using 3-D hierarchical structure against those of 2-D nanosheet structure were achieved. PMID:22672780

  3. Plasma jet desorption atomization-atomic fluorescence spectrometry and its application to mercury speciation by coupling with thin layer chromatography.

    PubMed

    Liu, Zhifu; Zhu, Zhenli; Zheng, Hongtao; Hu, Shenghong

    2012-12-01

    A novel plasma jet desorption atomization (PJDA) source was developed for atomic fluorescence spectrometry (AFS) and coupled on line with thin layer chromatography (TLC) for mercury speciation. An argon dielectric barrier discharge plasma jet, which is generated inside a 300 μm quartz capillary, interacts directly with the sample being analyzed and is found to desorb and atomize surface mercury species rapidly. The effectiveness of this PJDA surface sampling technique was demonstrated by measuring AFS signals of inorganic Hg(2+), methylmercury (MeHg), and phenylmercury (PhHg) deposited directly on TLC plate. The detection limits of the proposed PJDA-AFS method for inorganic Hg(2+), MeHg, and PhHg were 0.51, 0.29, and 0.34 pg, respectively, and repeatability was 4.7%, 2.2%, and 4.3% for 10 pg Hg(2+), MeHg, and PhHg. The proposed PJDA-AFS was also successfully coupled to TLC for mercury speciation. Under optimized conditions, the measurements of mercury dithizonate (Hg-D), methylmercury dithizonate (MeHg-D), and phenylmercury dithizonate (PhHg-D) could be achieved within 3 min with detection limits as low as 8.7 pg. The combination of TLC with PJDA-AFS provides a simple, cost-effective, relatively high-throughput way for mercury speciation. PMID:23153091

  4. Humidity Sensing and Photodetection Behavior of Electrochemically Exfoliated Atomically Thin-Layered Black Phosphorus Nanosheets.

    PubMed

    Erande, Manisha B; Pawar, Mahendra S; Late, Dattatray J

    2016-05-11

    Recent investigations on two-dimensional black phosphorus material mainly highlight work on few atomic layers and multilayers. It is still unknown if the black phosphorus atomically thin sheet is an ideal structure for the enhanced gas-solid interactions due to its large surface area. To further investigate this concern, we have synthesized few atomic layer thick nanosheets of black phosphorus using an electrochemical exfoliation method. The surface morphology and thickness of the nanosheet were identified using AFM, TEM, and Raman spectroscopy. The black phosphorus nanosheet thick film device was used for the gas sensing application with exposure to different humidites. Further, the few layer black phosphorus nanosheet based transistor shows good mobility and on/off ratio. The UV light irradiation on the black phosphorus nanosheet shows good response time. The overall results show that the few layer thick film of black phosphorus nanosheets sample exhibits creditable sensitivity and better recovery time to be used in humidity sensor and photodetector applications. PMID:27096546

  5. Interactions between fluorescence of atomically layered graphene oxide and metallic nanoparticles.

    PubMed

    Wang, Yu; Li, Shao-Sian; Yeh, Yun-Chieh; Yu, Chen-Chieh; Chen, Hsuen-Li; Li, Feng-Chieh; Chang, Yu-Ming; Chen, Chun-Wei

    2013-02-21

    Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp(2)- and sp(3)-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the interactions between the fluorescence of two-dimensional layered materials and the LSPR effect. PMID:23340692

  6. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures

    PubMed Central

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-01-01

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous–crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature. PMID:27220411

  7. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures.

    PubMed

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-01-01

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous-crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature. PMID:27220411

  8. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures

    NASA Astrophysics Data System (ADS)

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-05-01

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous–crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature.

  9. Atomically thin layered NiFe double hydroxides assembled 3D microspheres with promoted electrochemical performances

    NASA Astrophysics Data System (ADS)

    Li, Xiaomin; Zai, Jiantao; Liu, Yuanyuan; He, Xiaobo; Xiang, Shijie; Ma, Zifeng; Qian, Xuefeng

    2016-09-01

    LDHs in atomic thickness (mono-/bi-layers) usually exhibit novel physicochemical properties, especially in surface-dependent energy storage and catalysis areas. However, the thickness of the commonly reported 2D LDHs is in nanoscale and the bottom-up synthesis of atomically thin LDHs is rarely reported. Herein, high-quality atomically thin layered NiFe-LDHs assembled 3D microspheres were synthesized via a rational designed reaction system, where the formation of atomically thin building blocks was controlled by the synergetic effects of released carbonate anions and butanol. Furthermore, the complexant and solvents played important effects on the process of coprecipitation and the assembling of LDHs. Due to the nature of atomically thin LDHs nanosheets and unique 3D hierarchical structures, the obtained microspheres exhibited excellent electrocatalytic oxygen evolution reaction (OER) activity in alkaline medium with an onset overpotential (0.435 V, which is lower than that of common LDHs) and good durability. The as-prepared 3D NiFe-LDHs microspheres were also firstly used as supercapacitor materials and displayed a high specific capacitance of 1061 F g-1 at the current density of 1 A g-1.

  10. Partially oxidized atomic cobalt layers for carbon dioxide electroreduction to liquid fuel

    NASA Astrophysics Data System (ADS)

    Gao, Shan; Lin, Yue; Jiao, Xingchen; Sun, Yongfu; Luo, Qiquan; Zhang, Wenhua; Li, Dianqi; Yang, Jinlong; Xie, Yi

    2016-01-01

    Electroreduction of CO2 into useful fuels, especially if driven by renewable energy, represents a potentially ‘clean’ strategy for replacing fossil feedstocks and dealing with increasing CO2 emissions and their adverse effects on climate. The critical bottleneck lies in activating CO2 into the CO2•- radical anion or other intermediates that can be converted further, as the activation usually requires impractically high overpotentials. Recently, electrocatalysts based on oxide-derived metal nanostructures have been shown to enable CO2 reduction at low overpotentials. However, it remains unclear how the electrocatalytic activity of these metals is influenced by their native oxides, mainly because microstructural features such as interfaces and defects influence CO2 reduction activity yet are difficult to control. To evaluate the role of the two different catalytic sites, here we fabricate two kinds of four-atom-thick layers: pure cobalt metal, and co-existing domains of cobalt metal and cobalt oxide. Cobalt mainly produces formate (HCOO-) during CO2 electroreduction; we find that surface cobalt atoms of the atomically thin layers have higher intrinsic activity and selectivity towards formate production, at lower overpotentials, than do surface cobalt atoms on bulk samples. Partial oxidation of the atomic layers further increases their intrinsic activity, allowing us to realize stable current densities of about 10 milliamperes per square centimetre over 40 hours, with approximately 90 per cent formate selectivity at an overpotential of only 0.24 volts, which outperforms previously reported metal or metal oxide electrodes evaluated under comparable conditions. The correct morphology and oxidation state can thus transform a material from one considered nearly non-catalytic for the CO2 electroreduction reaction into an active catalyst. These findings point to new opportunities for manipulating and improving the CO2 electroreduction properties of metal systems

  11. Partially oxidized atomic cobalt layers for carbon dioxide electroreduction to liquid fuel.

    PubMed

    Gao, Shan; Lin, Yue; Jiao, Xingchen; Sun, Yongfu; Luo, Qiquan; Zhang, Wenhua; Li, Dianqi; Yang, Jinlong; Xie, Yi

    2016-01-01

    Electroreduction of CO2 into useful fuels, especially if driven by renewable energy, represents a potentially 'clean' strategy for replacing fossil feedstocks and dealing with increasing CO2 emissions and their adverse effects on climate. The critical bottleneck lies in activating CO2 into the CO2(•-) radical anion or other intermediates that can be converted further, as the activation usually requires impractically high overpotentials. Recently, electrocatalysts based on oxide-derived metal nanostructures have been shown to enable CO2 reduction at low overpotentials. However, it remains unclear how the electrocatalytic activity of these metals is influenced by their native oxides, mainly because microstructural features such as interfaces and defects influence CO2 reduction activity yet are difficult to control. To evaluate the role of the two different catalytic sites, here we fabricate two kinds of four-atom-thick layers: pure cobalt metal, and co-existing domains of cobalt metal and cobalt oxide. Cobalt mainly produces formate (HCOO(-)) during CO2 electroreduction; we find that surface cobalt atoms of the atomically thin layers have higher intrinsic activity and selectivity towards formate production, at lower overpotentials, than do surface cobalt atoms on bulk samples. Partial oxidation of the atomic layers further increases their intrinsic activity, allowing us to realize stable current densities of about 10 milliamperes per square centimetre over 40 hours, with approximately 90 per cent formate selectivity at an overpotential of only 0.24 volts, which outperforms previously reported metal or metal oxide electrodes evaluated under comparable conditions. The correct morphology and oxidation state can thus transform a material from one considered nearly non-catalytic for the CO2 electroreduction reaction into an active catalyst. These findings point to new opportunities for manipulating and improving the CO2 electroreduction properties of metal systems

  12. Broadband optical properties of large-area monolayer CVD molybdenum disulfide

    NASA Astrophysics Data System (ADS)

    Li, Wei; Birdwell, A. Glen; Amani, Matin; Burke, Robert A.; Ling, Xi; Lee, Yi-Hsien; Liang, Xuelei; Peng, Lianmao; Richter, Curt A.; Kong, Jing; Gundlach, David J.; Nguyen, N. V.

    2014-11-01

    Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this paper, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV, which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the so-called A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation because of the decreased interactions between the layers. A very strong optical critical point predicted to correspond to a quasiparticle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and Γ points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at ˜3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurring in bulk semiconductors, is associated with a combination of several critical points. Additionally, extending into the vacuum ultraviolet energy spectrum are a series of newly observed oscillations representing optical transitions from valence bands to higher conduction bands of the monolayer MoS2 complex band structure. These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two

  13. The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process

    SciTech Connect

    Jeon, Hyeongtag; Won, Youngdo

    2008-09-22

    The plasma enhanced atomic layer deposition process for the HfO{sub 2} thin film is modeled as simple reactions between Hf(OH){sub 3}NH{sub 2} and reactive oxygen species. The density functional theory calculation was performed for plausible reaction pathways to construct the reaction profile. While the triplet molecular oxygen is unlikely to form a reactive complex, the singlet molecular oxygen forms the stable adduct that goes through the transition state and completes the reaction pathway to the products. Either two singlet or two triplet oxygen atoms make the singlet adduct complex, which follows the same pathway to the product as the singlet molecular oxygen reacts.

  14. Atomic Layer Deposited Corrosion Protection: A Path to Stable and Efficient Photoelectrochemical Cells.

    PubMed

    Scheuermann, Andrew G; McIntyre, Paul C

    2016-07-21

    A fundamental challenge in developing photoelectrochemical cells for the renewable production of solar chemicals and fuels is the simultaneous requirement of efficient light absorption and robust stability under corrosive conditions. Schemes for corrosion protection of semiconductor photoelectrodes such as silicon using deposited layers were proposed and attempted for several decades, but increased operational lifetimes were either insufficient or the resulting penalties for device efficiency were prohibitive. In recent years, advances in atomic layer deposition (ALD) of thin coatings have made novel materials engineering possible, leading to substantial and simultaneous improvements in stability and efficiency of photoelectrochemical cells. The self-limiting, layer-by-layer growth of ALD makes thin films with low pinhole densities possible and may also provide a path to defect control that can generalize this protection technology to a large set of materials necessary to fully realize photoelectrochemical cell technology for artificial photosynthesis. PMID:27359352

  15. Scalable control program for multiprecursor flow-type atomic layer deposition system

    SciTech Connect

    Selvaraj, Sathees Kannan; Takoudis, Christos G.

    2015-01-01

    The authors report the development and implementation of a scalable control program to control flow type atomic layer deposition (ALD) reactor with multiple precursor delivery lines. The program logic is written and tested in LABVIEW environment to control ALD reactor with four precursor delivery lines to deposit up to four layers of different materials in cyclic manner. The programming logic is conceived such that to facilitate scale up for depositing more layers with multiple precursors and scale down for using single layer with any one precursor in the ALD reactor. The program takes precursor and oxidizer exposure and purging times as input and controls the sequential opening and closing of the valves to facilitate the complex ALD process in cyclic manner. The program could be used to deposit materials from any single line or in tandem with other lines in any combination and in any sequence.

  16. Surface treatment for the atomic layer deposition of HfO{sub 2} on silicon

    SciTech Connect

    Damlencourt, J-F.; Renault, O.; Martin, F.; Semeria, M-N.; Billon, T; Bedu, F.

    2005-04-04

    The atomic layer deposition (ALD) of HfO{sub 2} on silicon with a Cl{sub 2} surface treatment is investigated by physicochemical and electrical techniques. The specificity of this treatment is to create, on a HF-dipped silicon surface, the nucleation sites necessary for the ALD growth. The growth rates obtained by spectroscopic ellipsometry and total x-ray fluorescence spectroscopy indicate that the nucleation sites (i.e., the -OH groups), which are necessary to perform some bidimensional ALD growth, are generated during this surface treatment. After deposition of thin HfO{sub 2} layers (from a few monolayers up to 8.7 nm), a very thin parasitic SiO{sub x} layer, underneath 1 monolayer of Hf silicate, is observed by x-ray photoelectron spectroscopy. Nevertheless, an equivalent oxide thickness of 1.1 nm is obtained with an as-deposited 3.7 nm thick HfO{sub 2} layer.

  17. Fabrication of Large Area Periodic Nanostructures Using Nanosphere Photolithography

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Dey, Dibyendu; Memis, Omer G.; Katsnelson, Alex; Mohseni, Hooman

    2008-10-01

    Large area periodic nanostructures exhibit unique optical and electronic properties and have found many applications, such as photonic band-gap materials, high dense data storage, and photonic devices. We have developed a maskless photolithography method—Nanosphere Photolithography (NSP)—to produce a large area of uniform nanopatterns in the photoresist utilizing the silica micro-spheres to focus UV light. Here, we will extend the idea to fabricate metallic nanostructures using the NSP method. We produced large areas of periodic uniform nanohole array perforated in different metallic films, such as gold and aluminum. The diameters of these nanoholes are much smaller than the wavelength of UV light used and they are very uniformly distributed. The method introduced here inherently has both the advantages of photolithography and self-assembled methods. Besides, it also generates very uniform repetitive nanopatterns because the focused beam waist is almost unchanged with different sphere sizes.

  18. Plasma and Ion Sources in Large Area Coatings: A Review

    SciTech Connect

    Anders, Andre

    2005-02-28

    Efficient deposition of high-quality coatings often requires controlled application of excited or ionized particles. These particles are either condensing (film-forming) or assisting by providing energy and momentum to the film growth process, resulting in densification, sputtering/etching, modification of stress, roughness, texture, etc. In this review, the technical means are surveyed enabling large area application of ions and plasmas, with ion energies ranging from a few eV to a few keV. Both semiconductortype large area (single wafer or batch processing with {approx} 1000 cm{sup 2}) and in-line web and glass-coating-type large area (> 10{sup 7} m{sup 2} annually) are considered. Characteristics and differences between plasma and ion sources are explained. The latter include gridded and gridless sources. Many examples are given, including sources based on DC, RF, and microwave discharges, some with special geometries like hollow cathodes and E x B configurations.

  19. In-situ spectroscopic ellipsometry study of copper selective-area atomic layer deposition on palladium

    SciTech Connect

    Jiang, Xiaoqiang; Wang, Han; Qi, Jie; Willis, Brian G.

    2014-07-01

    Selective area copper atomic layer deposition on palladium seed layers has been investigated with in-situ real-time spectroscopic ellipsometry to probe the adsorption/desorption and reaction characteristics of individual deposition cycles. The reactants are copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate) vapor and hydrogen gas. Self-limiting atomic layer deposition was observed in the temperature range of 135–230 °C in a low pressure reactor. Under optimal conditions, growth occurs selectively on palladium and not on silicon dioxide or silicon nitride layers. Based on in-situ ellipsometry data and supporting experiments, a new mechanism for growth is proposed. In the proposed mechanism, precursor adsorption is reversible, and dissociatively adsorbed hydrogen are the stable surface intermediates between growth cycles. The mechanism is enabled by continuous diffusion of palladium from the seed layer into the deposited copper film and strong H* binding to palladium sites. Less intermixing can be obtained at low growth temperatures and short cycle times by minimizing Cu/Pd inter-diffusion.

  20. Three-dimensional spirals of atomic layered MoS2.

    PubMed

    Zhang, Liming; Liu, Kaihui; Wong, Andrew Barnabas; Kim, Jonghwan; Hong, Xiaoping; Liu, Chong; Cao, Ting; Louie, Steven G; Wang, Feng; Yang, Peidong

    2014-11-12

    Atomically thin two-dimensional (2D) layered materials, including graphene, boron nitride, and transition metal dichalcogenides (TMDs), can exhibit novel phenomena distinct from their bulk counterparts and hold great promise for novel electronic and optoelectronic applications. Controlled growth of such 2D materials with different thickness, composition, and symmetry are of central importance to realize their potential. In particular, the ability to control the symmetry of TMD layers is highly desirable because breaking the inversion symmetry can lead to intriguing valley physics, nonlinear optical properties, and piezoelectric responses. Here we report the first chemical vapor deposition (CVD) growth of spirals of layered MoS2 with atomically thin helical periodicity, which exhibits a chiral structure and breaks the three-dimensional (3D) inversion symmetry explicitly. The spirals composed of tens of connected MoS2 layers with decreasing areas: each basal plane has a triangular shape and shrinks gradually to the summit when spiraling up. All the layers in the spiral assume an AA lattice stacking, which is in contrast to the centrosymmetric AB stacking in natural MoS2 crystals. We show that the noncentrosymmetric MoS2 spiral leads to a strong bulk second-order optical nonlinearity. In addition, we found that the growth of spirals involves a dislocation mechanism, which can be generally applicable to other 2D TMD materials. PMID:25343743

  1. Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing

    SciTech Connect

    Hwang, Yoontae; Dayeh, Shadi A.; Nguyen, Binh-Minh

    2013-12-23

    Conformal coating of metal layers on three-dimensional structures is essential for advanced electronic devices such as storage elements, transistors, and sensors. The quality of atomic layer deposited platinum on oxide surfaces was enhanced by adding pre-deposition pulses of trimethylaluminum (TMA) for improved wetting. With an optimal number of TMA pre-pulses, a 6 nm thick Pt film was perfectly coalesced in contrast to only Pt island formation without TMA pre-pulses. A Pt gate all around Ge/Si nanowire field effect transistor was realized highlighting the potential of this approach for efficient deposition of Pt on 3D nanoelectronic devices.

  2. Developmental experiments on large-area silicon solar cells

    NASA Astrophysics Data System (ADS)

    Silard, Andrei P.; Nani, Gabriel

    1989-05-01

    Practical ways of attenuating the severe limitations imposed by areal inhomogeneities on the performance of large-area solar cells fabricated on both p- and n-silicon wafers are described, and the results of tests are presented. The p(+)-n-n(+) and n(+)-p-p(+) cells were processed as bifacial devices and tested under both frontside and backside AM1 illumination. It is shown that the combination of a simple design and some of the technological approaches evaluated in this study result in low-cost high-efficiency large-area bifacial silicon solar cells that exhibit with good electrooptical performance.

  3. Large-area metallic photonic lattices for military applications.

    SciTech Connect

    Luk, Ting Shan

    2007-11-01

    In this project we developed photonic crystal modeling capability and fabrication technology that is scaleable to large area. An intelligent optimization code was developed to find the optimal structure for the desired spectral response. In terms of fabrication, an exhaustive survey of fabrication techniques that would meet the large area requirement was reduced to Deep X-ray Lithography (DXRL) and nano-imprint. Using DXRL, we fabricated a gold logpile photonic crystal in the <100> plane. For the nano-imprint technique, we fabricated a cubic array of gold squares. These two examples also represent two classes of metallic photonic crystal topologies, the connected network and cermet arrangement.

  4. Atomic layer deposition of zinc sulfide with Zn(TMHD){sub 2}

    SciTech Connect

    Short, Andrew; Jewell, Leila; Doshay, Sage; Church, Carena; Keiber, Trevor; Bridges, Frank; Carter, Sue; Alers, Glenn

    2013-01-15

    The atomic layer deposition (ALD) of ZnS films with Zn(TMHD){sub 2} and in situ generated H{sub 2}S as precursors was investigated, over a temperature range of 150-375 Degree-Sign C. ALD behavior was confirmed by investigation of growth behavior and saturation curves. The properties of the films were studied with atomic force microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, ultraviolet-visible-infrared spectroscopy, and extended x-ray absorption fine structure. The results demonstrate a film that can penetrate a porous matrix, with a local Zn structure of bulk ZnS, and a band gap between 3.5 and 3.6 eV. The ZnS film was used as a buffer layer in nanostructured PbS quantum dot solar cell devices.

  5. Atomic Layer Deposition of Titania on Cellulose Acetate for Enhanced Hemostasis

    PubMed Central

    Hyde, G. Kevin; Stewart, S. Michael; Scarel, Giovanna; Parsons, Gregory N.; Shih, Chun-Che; Shih, Chun-Ming; Lin, Shing-Jong; Su, Yea-Yang; Monteiro-Riviere, Nancy A.; Narayan, Roger J.

    2012-01-01

    TiO2 films may be used to alter the wettability and hemocompatibility of cellulose materials. In this study, pure and stoichiometric TiO2 films were grown using atomic layer deposition on both silicon and cellulose substrates. The films were grown with uniform thicknesses and with a growth rate in agreement with literature results. The TiO2 films were shown to profoundly alter the water contact angle values of cellulose depending upon processing characteristics. Higher rates of protein adsorption were noted on TiO2-coated cellulose acetate than on uncoated cellulose acetate. These results suggest that atomic layer deposition is an appropriate method for improving the biological properties of hemostatic agents and other blood-contacting biomaterials. PMID:21298806

  6. CoFe2/Al2O3/PMNPT multiferroic heterostructures by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Ziyao; Grocke, Garrett; Yanguas-Gil, Angel; Wang, Xinjun; Gao, Yuan; Sun, Nianxiang; Howe, Brandon; Chen, Xing

    2016-05-01

    Multiferroic materials and applications allow electric bias control of magnetism or magnetic bias control of polarization, enabling fast, compact, energy-efficient devices in RF/microwave communication systems such as filters, shifters, and antennas; electronics devices such as inductors and capacitors; and other magnetic material related applications including sensors and memories. In this manuscript, we utilize atomic layer deposition technology to grow magnetic CoFe metallic thin films onto PMNPT, with a ˜110 Oe electric field induced ferromagnetic resonance field shift in the CoFe/Al2O3/PMNPT multiferroic heterostructure. Our work demonstrates an atomic layer deposition fabricated multiferroic heterostructure with significant tunability and shows that the unique thin film growth mechanism will benefit integrated multiferroic application in near future.

  7. Atomic layer deposition of TiO2 thin films on nanoporous alumina templates: Medical applications

    NASA Astrophysics Data System (ADS)

    Narayan, Roger J.; Monteiro-Riviere, Nancy A.; Brigmon, Robin L.; Pellin, Michael J.; Elam, Jeffrey W.

    2009-06-01

    Nanostructured materials may play a significant role in controlled release of pharmacologic agents for treatment of cancer. Many nanoporous polymer materials are inadequate for use in drug delivery. Nanoporous alumina provides several advantages over other materials for use in controlled drug delivery and other medical applications. Atomic layer deposition was used to coat all the surfaces of a nanoporous alumina membrane in order to reduce the pore size in a controlled manner. Neither the 20 nm nor the 100 nm TiO2-coated nanoporous alumina membranes exhibited statistically lower viability compared to the uncoated nanoporous alumina membrane control materials. Nanostructured materials prepared using atomic layer deposition may be useful for delivering a pharmacologic agent at a precise rate to a specific location in the body. These materials may serve as the basis for “smart” drug delivery devices, orthopedic implants, or self-sterilizing medical devices.

  8. All dielectric hard x-ray mirror by atomic layer deposition

    SciTech Connect

    Szeghalmi, Adriana; Senz, Stephan; Goesele, Ulrich; Knez, Mato; Bretschneider, Mario

    2009-03-30

    Mirrors consisting of Al{sub 2}O{sub 3} and Ta{sub 2}O{sub 5} ({approx}2 nm film thickness) nanolaminates for hard x-ray wavelengths were produced by atomic layer deposition and characterized. Atomic force microscopy and transmission electron microscopy (TEM) proved extremely smooth surfaces of the mirrors, which are critical for highest reflectance. TEM images showed sharp interfaces between the oxides. The experimental x-ray reflectivity data were theoretically modeled and indicated minimal random thickness variations in the individual layers. Additionally, a depth graded sample with a total thickness of {approx}4 {mu}m for focusing applications in transmission (Laue) geometry and capillaries was coated.

  9. Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine.

    PubMed

    Park, Jun Hong; Fathipour, Sara; Kwak, Iljo; Sardashti, Kasra; Ahles, Christopher F; Wolf, Steven F; Edmonds, Mary; Vishwanath, Suresh; Xing, Huili Grace; Fullerton-Shirey, Susan K; Seabaugh, Alan; Kummel, Andrew C

    2016-07-26

    To deposit an ultrathin dielectric onto WSe2, monolayer titanyl phthalocyanine (TiOPc) is deposited by molecular beam epitaxy as a seed layer for atomic layer deposition (ALD) of Al2O3 on WSe2. TiOPc molecules are arranged in a flat monolayer with 4-fold symmetry as measured by scanning tunneling microscopy. ALD pulses of trimethyl aluminum and H2O nucleate on the TiOPc, resulting in a uniform deposition of Al2O3, as confirmed by atomic force microscopy and cross-sectional transmission electron microscopy. The field-effect transistors (FETs) formed using this process have a leakage current of 0.046 pA/μm(2) at 1 V gate bias with 3.0 nm equivalent oxide thickness, which is a lower leakage current than prior reports. The n-branch of the FET yielded a subthreshold swing of 80 mV/decade. PMID:27305595

  10. Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization.

    PubMed

    Farmer, Damon B; Gordon, Roy G

    2006-04-01

    Alternating exposures of nitrogen dioxide gas and trimethylaluminum vapor are shown to functionalize the surfaces of single-walled carbon nanotubes with a self-limited monolayer. Functionalized nanotube surfaces are susceptible to atomic layer deposition of continuous, radially isotropic material. This allows for the creation of coaxial nanotube structures of multiple materials with precisely controlled diameters. Functionalization involves only weak physical bonding, avoiding covalent modification, which should preserve the unique optical, electrical, and mechanical properties of the nanotubes. PMID:16608267

  11. High-intensity terahertz radiation from a microstructured large-area photoconductor

    NASA Astrophysics Data System (ADS)

    Dreyhaupt, A.; Winnerl, S.; Dekorsy, T.; Helm, M.

    2005-03-01

    We present a planar large-area photoconducting emitter for impulsive generation of terahertz (THz) radiation. The device consists of an interdigitated electrode metal-semiconductor-metal (MSM) structure which is masked by a second metallization layer isolated from the MSM electrodes. The second layer blocks optical excitation in every second period of the MSM finger structure. Hence charge carriers are excited only in those periods of the MSM structure which exhibit a unidirectional electric field. Constructive interference of the THz emission from accelerated carriers leads to THz electric field amplitudes up to 85V/cm when excited with fs optical pulses from a Ti:sapphire oscillator with an average power of 100mW at a bias voltage of 65V applied to the MSM structure. The proposed device structure has a large potential for large-area high-power THz emitters.

  12. Optical limiting properties and mechanisms of single-layer graphene dispersions in heavy-atom solvents.

    PubMed

    Yan, Lihe; Xiong, Yaobing; Si, Jinhai; Sun, Xuehui; Yi, Wenhui; Hou, Xun

    2014-12-29

    The optical limiting (OL) properties of single-layer graphene dispersions in different solvents were studied using a nanosecond pulse laser. The graphene dispersions, especially in heavy-atom solvents, showed much better OL properties compared with referenced C60-toluene solution. The dependences of OL thresholds and nonlinear scattering (NLS) intensities on the solvent surface tensions indicated that, NLS effect played an important role in the OL process of graphene dispersions, while nonlinear absorption (NLA) effect might also contribute in solvents with heavy atoms. The NLA measurements further demonstrated the contribution of NLA effect to the excellent OL property of graphene dispersions in heavy-atom solvents. PMID:25607151

  13. Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators

    NASA Astrophysics Data System (ADS)

    Waggoner, P. S.; Tan, C. P.; Craighead, H. G.

    2010-06-01

    Thin silicon dioxide films are deposited on nanomechanical resonators using atomic layer deposition (ALD), and their effect on the resonant properties of silicon nitride devices is studied as a function of thickness. We present experimental data and an analytical model for the effect of ALD growth and corroborate the model by studying resonators coated with atomic layer deposited aluminum nitride as well. As thicker films are deposited, device frequency shifts, become nonlinear with thickness, and quality factors drop significantly. Thin silicon dioxide coatings can be deposited on virtually any device surface to support surface chemistries commonly used in biochemical functionalization on glass surfaces. We also demonstrate that the efficiency of silane functionalization improves by 35% when low stress silicon nitride surfaces are coated with only 2.1 nm of atomic layer deposited silicon dioxide. This ALD modification technique should be particularly useful for nanomechanical resonant sensors since a thin, conformal film does not drastically reduce quality factor nor does it add excessive mass that would decrease device sensitivity.

  14. MoS{sub 2} functionalization for ultra-thin atomic layer deposited dielectrics

    SciTech Connect

    Azcatl, Angelica; McDonnell, Stephen; Santosh, K.C.; Peng, Xin; Dong, Hong; Qin, Xiaoye; Addou, Rafik; Lu, Ning; Kim, Moon J.; Cho, Kyeongjae; Wallace, Robert M.; Mordi, Greg I.; Kim, Jiyoung

    2014-03-17

    The effect of room temperature ultraviolet-ozone (UV-O{sub 3}) exposure of MoS{sub 2} on the uniformity of subsequent atomic layer deposition of Al{sub 2}O{sub 3} is investigated. It is found that a UV-O{sub 3} pre-treatment removes adsorbed carbon contamination from the MoS{sub 2} surface and also functionalizes the MoS{sub 2} surface through the formation of a weak sulfur-oxygen bond without any evidence of molybdenum-sulfur bond disruption. This is supported by first principles density functional theory calculations which show that oxygen bonded to a surface sulfur atom while the sulfur is simultaneously back-bonded to three molybdenum atoms is a thermodynamically favorable configuration. The adsorbed oxygen increases the reactivity of MoS{sub 2} surface and provides nucleation sites for atomic layer deposition of Al{sub 2}O{sub 3}. The enhanced nucleation is found to be dependent on the thin film deposition temperature.

  15. Analytic expressions for atomic layer deposition: Coverage, throughput, and materials utilization in cross-flow, particle coating, and spatial atomic layer deposition

    SciTech Connect

    Yanguas-Gil, Angel; Elam, Jeffrey W.

    2014-05-15

    In this work, the authors present analytic models for atomic layer deposition (ALD) in three common experimental configurations: cross-flow, particle coating, and spatial ALD. These models, based on the plug-flow and well-mixed approximations, allow us to determine the minimum dose times and materials utilization for all three configurations. A comparison between the three models shows that throughput and precursor utilization can each be expressed by universal equations, in which the particularity of the experimental system is contained in a single parameter related to the residence time of the precursor in the reactor. For the case of cross-flow reactors, the authors show how simple analytic expressions for the reactor saturation profiles agree well with experimental results. Consequently, the analytic model can be used to extract information about the ALD surface chemistry (e.g., the reaction probability) by comparing the analytic and experimental saturation profiles, providing a useful tool for characterizing new and existing ALD processes.

  16. Invited Article: A test-facility for large-area microchannel plate detector assemblies using a pulsed sub-picosecond laser

    NASA Astrophysics Data System (ADS)

    Adams, Bernhard; Chollet, Matthieu; Elagin, Andrey; Oberla, Eric; Vostrikov, Alexander; Wetstein, Matthew; Obaid, Razib; Webster, Preston

    2013-06-01

    The Large Area Picosecond Photodetector Collaboration is developing large-area fast photodetectors with time resolution ≲10 ps and space resolution ≲1 mm based on atomic layer deposition-coated glass Micro-Channel Plates (MCPs). We have assembled a facility at Argonne National Laboratory for characterizing the performance of a wide variety of microchannel plate configurations and anode structures in configurations approaching complete detector systems. The facility consists of a pulsed Ti:Sapphire laser with a pulse duration ≈100 fs, an optical system allowing the laser to be scanned in two dimensions, and a computer-controlled data-acquisition system capable of reading out 60 channels of anode signals with a sampling rate of over 10 GS/s. The laser can scan on the surface of a sealed large-area photodetector, or can be introduced into a large vacuum chamber for tests on bare 8 in.-square MCP plates or into a smaller chamber for tests on 33-mm circular substrates. We present the experimental setup, detector calibration, data acquisition, analysis tools, and typical results demonstrating the performance of the test facility.

  17. Large area, low cost solar cell development and production readiness

    NASA Technical Reports Server (NTRS)

    Michaels, D.

    1982-01-01

    A process sequence for a large area ( or = 25 sq. cm) silicon solar cell was investigated. Generic cell choice was guided by the expected electron fluence, by the packing factors of various cell envelope designs onto each panel to provide needed voltage as well as current, by the weight constraints on the system, and by the cost goals of the contract.

  18. Large-area Overhead Manipulator for Access of Fields

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Multi-axis, cable-driven manipulators have evolved over many years providing large area suspended platform access, programmability, relatively rigid and flexibly-positioned platform control and full six degree of freedom (DOF) manipulation of sensors and tools. We describe innovations for a new six...

  19. Large-area cryocooling for far-infrared telescopes

    NASA Astrophysics Data System (ADS)

    Hoang, Triem T.; O'Connell, Tamara A.; Ku, Jentung; Butler, C. D.; Swanson, Theodore D.

    2003-10-01

    Requirements for cryocooling of large-area heat sources begin to appear in studies of future space missions. Examples are the cooling of (i) the entire structure/mirror of large Far Infrared space telescopes to 4-40K and (ii) cryogenic thermal bus to maintain High Temperature Superconductor electronics to below 75K. The cryocooling system must provide robust/reliable operation and not cause significant vibration to the optical components. But perhaps the most challenging aspect of the system design is the removal of waste heat over a very large area. A cryogenic Loop Heat Pipe (C-LHP)/ cryocooler cooling system was developed with the ultimate goal of meeting the aforementioned requirements. In the proposed cooling concept, the C-LHP collected waste heat from a large-area heat source and then transported it to the cryocooler coldfinger for rejection. A proof-of-concept C-LHP test loop was constructed and performance tested in a vacuum chamber to demonstrate the feasibility of the proposed C-LHP to distribute the cryocooler cooling power over a large area. The test loop was designed to operate with any cryogenic working fluid such as Oxygen/Nitrogen (60-120K), Neon (28-40K), Hydrogen (18-30K), and Helium (2.5-4.5K). Preliminary test results indicated that the test loop had a cooling capacity of 4.2W in the 30-40K temperature range with Neon as the working fluid.

  20. Integration of atomic layer deposited nanolaminates on silicon waveguides (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Autere, Anton; Karvonen, Lasse; Säynätjoki, Antti; Roussey, Matthieu; Roenn, John; Färm, Elina; Kemell, Marianna; Tu, Xiaoguang; Liow, Tsung-Yang; Lo, Patrick; Ritala, Mikko; Leskelä, Markku; Lipsanen, Harri; Honkanen, Seppo; Sun, Zhipei

    2016-05-01

    Despite all the eminent advantages of silicon photonics, other materials need to be integrated to fulfill the functions that are difficult to realize with silicon alone. This is because silicon has a low light emission efficiency and a low electro-optic coefficient, limiting the use of silicon as a material for light sources and modulators. A strong two-photon absorption (TPA) at high intensities also limits the use of silicon in applications exploiting nonlinear effects. In addition, signal amplification is needed to compensate the insertion and propagation losses in silicon nanowaveguides. To address these issues we have demonstrated the integration of atomic layer deposited nanolaminates on silicon waveguides. Firstly we demonstrate slot waveguide ring resonators patterned on a silicon-on-insulator (SOI) wafer coated with an atomic layer deposited organic/inorganic nanolaminate structure, which consists of alternating layers of tantalum pentoxide (Ta2O5) and polyimide (PI) [1]. These materials were selected since the ALD process for depositing Ta2O5/PI nanolaminate films is already available [2] and both materials exhibit high third order nonlinearities [3-4]. In our nanolaminate ring resonators, the optical power is not only confined in the narrow central air slot but also in several parallel sub-10 nm wide vertical polyimide slots. This indicates that the mode profiles in the silicon slot waveguide can be accurately tuned by the atomic layer deposition (ALD) method. Our results show that ALD of organic and inorganic materials can be combined with conventional silicon waveguide fabrication techniques to create slot waveguide ring resonators with varying mode profiles. Secondly we demonstrate the integration of atomic layer deposited erbium-doped aluminum oxide (Al2O3) nanolaminates on silicon waveguides. This method provides an efficient way for controlling the concentration and distribution of erbium ions. We have applied this method on silicon strip and slot

  1. Atomic scale imaging of competing polar states in a Ruddlesden-Popper layered oxide.

    PubMed

    Stone, Greg; Ophus, Colin; Birol, Turan; Ciston, Jim; Lee, Che-Hui; Wang, Ke; Fennie, Craig J; Schlom, Darrell G; Alem, Nasim; Gopalan, Venkatraman

    2016-01-01

    Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden-Popper (RP), An+1BnO3n+1, thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Srn+1TinO3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases. We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure. PMID:27578622

  2. Atomic layer deposition enhanced grafting of phosphorylcholine on stainless steel for intravascular stents.

    PubMed

    Zhong, Qi; Yan, Jin; Qian, Xu; Zhang, Tao; Zhang, Zhuo; Li, Aidong

    2014-09-01

    In-stent restenosis (ISR) and re-endothelialization delay are two major issues of intravascular stent in terms of clinical safety and effects. Construction of mimetic cell membrane surface on stents using phosphorylcholine have been regarded as one of the most powerful strategies to resolve these two issues and improve the performance of stents. In this study, atomic layer deposition (ALD) technology, which is widely used in semiconductor industry, was utilized to fabricate ultra-thin layer (10nm) of alumina (Al2O3) on 316L stainless steel (SS), then the alumina covered surface was modified with 3-aminopropyltriethoxysilane (APS) and 2-methacryloyloxyethyl phosphorylcholine (MPC) sequentially in order to produce phosphorylcholine mimetic cell membrane surface. The pristine and modified surfaces were characterized using X-ray photoelectron spectroscopy, atomic force microscope and water contact angle measurement. Furthermore, the abilities of protein adsorption, platelet adhesion and cell proliferation on the surfaces were investigated. It was found that alumina layer can significantly enhance the surface grafting of APS and MPC on SS; and in turn efficiently inhibit protein adsorption and platelet adhesion, and promote the attachment and proliferation of human umbilical vein endothelial cells (HUVEC) on the surfaces. In association with the fact that the deposition of alumina layer is also beneficial to the improvement of adhesion and integrity of drug-carrying polymer coating on drug eluting stents, we expect that ALD technology can largely assist in the modifications on inert metallic surfaces and benefit implantable medical devices, especially intravascular stents. PMID:25016426

  3. Simple fabrication of air-stable black phosphorus heterostructures with large-area hBN sheets grown by chemical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Sinha, Sapna; Takabayashi, Yuya; Shinohara, Hisanori; Kitaura, Ryo

    2016-09-01

    We have developed a facile and general method to passivate thin black phosphorus (BP) flakes with large-area high-quality monolayer hexagonal boron nitride (hBN) sheets grown by the chemical vapor deposition (CVD) method. In spite of the one-atom-thick structure, the high-quality CVD-grown monolayer hBN has proven to be useful to prevent the degradation of thin BP flakes exfoliated on substrates. Mechanically exfoliated BP flakes prepared on a Si substrate are covered by the monolayer hBN sheet to preserve (otherwise unstable) atomic layered BP flakes from degradation. The present technique can generally be applied to fabricating BP-based electronic devices with much easiness.

  4. Highly Enhanced Electromechanical Stability of Large-Area Graphene with Increased Interfacial Adhesion Energy by Electrothermal-Direct Transfer for Transparent Electrodes.

    PubMed

    Kim, Jangheon; Kim, Gi Gyu; Kim, Soohyun; Jung, Wonsuk

    2016-09-01

    Graphene, a two-dimensional sheet of carbon atoms in a hexagonal lattice structure, has been extensively investigated for research and industrial applications as a promising material with outstanding electrical, mechanical, and chemical properties. To fabricate graphene-based devices, graphene transfer to the target substrate with a clean and minimally defective surface is the first step. However, graphene transfer technologies require improvement in terms of uniform transfer with a clean, nonfolded and nontorn area, amount of defects, and electromechanical reliability of the transferred graphene. More specifically, uniform transfer of a large area is a key challenge when graphene is repetitively transferred onto pretransferred layers because the adhesion energy between graphene layers is too low to ensure uniform transfer, although uniform multilayers of graphene have exhibited enhanced electrical and optical properties. In this work, we developed a newly suggested electrothermal-direct (ETD) transfer method for large-area high quality monolayer graphene with less defects and an absence of folding or tearing of the area at the surface. This method delivers uniform multilayer transfer of graphene by repetitive monolayer transfer steps based on high adhesion energy between graphene layers and the target substrate. To investigate the highly enhanced electromechanical stability, we conducted mechanical elastic bending experiments and reliability tests in a highly humid environment. This ETD-transferred graphene is expected to replace commercial transparent electrodes with ETD graphene-based transparent electrodes and devices such as a touch panels with outstanding electromechanical stability. PMID:27564120

  5. Fabrication and atomic structure of size-selected, layered MoS2 clusters for catalysis.

    PubMed

    Cuddy, Martin J; Arkill, Kenton P; Wang, Zhi Wei; Komsa, Hannu-Pekka; Krasheninnikov, Arkady V; Palmer, Richard E

    2014-11-01

    Well defined MoS2 nanoparticles having a layered structure and abundant edges would be of considerable interest for applications including photocatalysis. We report the atomic structure of MoS2 size-selected clusters with mass in a range all the way from 50 to ∼2000 MoS2 units. The clusters were prepared by magnetron sputtering and gas condensation prior to size selection and soft landing on carbon supports. Aberration-corrected scanning transmission electron microscopy (STEM) in high-angle annular dark-field (HAADF) mode reveals a layered structure and Mo-Mo spacing similar to the bulk material. The mean number of layers in these lamellar clusters increases from one to three with increasing mass, consistent with density functional theory calculations of the balance between edge energies and interlayer binding. PMID:25226541

  6. In Vacuo Photoemission Studies of Platinum Atomic Layer Deposition Using Synchrotron Radiation.

    PubMed

    Geyer, Scott M; Methaapanon, Rungthiwa; Shong, Bonggeun; Pianetta, Piero A; Bent, Stacey F

    2013-01-01

    The mechanism of platinum atomic layer deposition using (methylcyclopentadienyl)trimethylplatinum and oxygen is investigated with in vacuo photoemission spectroscopy at the Stanford Synchrotron Radiation Lightsource. With this surface-sensitive technique, the surface species following the Pt precursor half cycle and the oxygen counter-reactant half cycle can be directly measured. We observed significant amounts of carbonaceous species following the Pt precursor pulse, consistent with dehydrogenation of the precursor ligands. Significantly more carbon is observed when deposition is carried out in the thermal decomposition temperature region. The carbonaceous layer is removed during the oxygen counter reactant pulse, and the photoemission spectrum shows that a layer of adsorbed oxygen remains on the surface as previously predicted. PMID:26291229

  7. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    PubMed

    Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

    2016-07-27

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit. PMID:27345195

  8. Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications

    SciTech Connect

    Swerts, J.; Armini, S.; Carbonell, L.; Delabie, A.; Franquet, A.; Mertens, S.; Popovici, M.; Schaekers, M.; Witters, T.; Toekei, Z.; Beyer, G.; Van Elshocht, S.; Gravey, V.; Cockburn, A.; Shah, K.; Aubuchon, J.

    2012-01-15

    Ru thin films were deposited by plasma enhanced atomic layer deposition using MethylCyclopentadienylPyrrolylRuthenium (MeCpPy)Ru and N{sub 2}/NH{sub 3} plasma. The growth characteristics have been studied on titanium nitride or tantalum nitride substrates of various thicknesses. On SiO{sub 2}, a large incubation period has been observed, which can be resolved by the use of a metal nitride layer of {approx} 0.8 nm. The growth characteristics of Ru layers deposited on ultra-thin metal nitride layers are similar to those on thick metal nitride substrates despite the fact that the metal nitride layers are not fully closed. Scaled Ru/metal nitride stacks were deposited in narrow lines down to 25 nm width. Thinning of the metal nitride does not impact the conformality of the Ru layer in the narrow lines. For the thinnest lines the Ru deposited on the side wall showed a more granular structure when compared to the bottom of the trench, which is attributed to the plasma directionality during the deposition process.

  9. Atom-scale depth localization of biologically important chemical elements in molecular layers.

    PubMed

    Schneck, Emanuel; Scoppola, Ernesto; Drnec, Jakub; Mocuta, Cristian; Felici, Roberto; Novikov, Dmitri; Fragneto, Giovanna; Daillant, Jean

    2016-08-23

    In nature, biomolecules are often organized as functional thin layers in interfacial architectures, the most prominent examples being biological membranes. Biomolecular layers play also important roles in context with biotechnological surfaces, for instance, when they are the result of adsorption processes. For the understanding of many biological or biotechnologically relevant phenomena, detailed structural insight into the involved biomolecular layers is required. Here, we use standing-wave X-ray fluorescence (SWXF) to localize chemical elements in solid-supported lipid and protein layers with near-Ångstrom precision. The technique complements traditional specular reflectometry experiments that merely yield the layers' global density profiles. While earlier work mostly focused on relatively heavy elements, typically metal ions, we show that it is also possible to determine the position of the comparatively light elements S and P, which are found in the most abundant classes of biomolecules and are therefore particularly important. With that, we overcome the need of artificial heavy atom labels, the main obstacle to a broader application of high-resolution SWXF in the fields of biology and soft matter. This work may thus constitute the basis for the label-free, element-specific structural investigation of complex biomolecular layers and biological surfaces. PMID:27503887

  10. Single-Atom Pd₁/Graphene Catalyst Achieved by Atomic Layer Deposition: Remarkable Performance in Selective Hydrogenation of 1,3-Butadiene.

    PubMed

    Yan, Huan; Cheng, Hao; Yi, Hong; Lin, Yue; Yao, Tao; Wang, Chunlei; Li, Junjie; Wei, Shiqiang; Lu, Junling

    2015-08-26

    We reported that atomically dispersed Pd on graphene can be fabricated using the atomic layer deposition technique. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and X-ray absorption fine structure spectroscopy both confirmed that isolated Pd single atoms dominantly existed on the graphene support. In selective hydrogenation of 1,3-butadiene, the single-atom Pd1/graphene catalyst showed about 100% butenes selectivity at 95% conversion at a mild reaction condition of about 50 °C, which is likely due to the changes of 1,3-butadiene adsorption mode and enhanced steric effect on the isolated Pd atoms. More importantly, excellent durability against deactivation via either aggregation of metal atoms or carbonaceous deposits during a total 100 h of reaction time on stream was achieved. Therefore, the single-atom catalysts may open up more opportunities to optimize the activity, selectivity, and durability in selective hydrogenation reactions. PMID:26268551

  11. MBE grown III-V strain relaxed buffer layers and superlattices characterized by atomic force microscopy

    SciTech Connect

    Howard, A.J.; Fritz, I.J.; Drummond, T.J.; Olsen, J.A.; Hammons, B.E.; Kurtz, S.R.; Brennan, T.M.

    1993-11-01

    Using atomic force microscopy (AFM), the authors have investigated the effects of growth temperature and dopant incorporation on the surface morphology of MBE grown graded buffer layers and strained layer superlattices (SLSs) in the InGaAlAs/GaAs and InAsSb/InSb material systems. The AFM results show quantitatively that over the temperature range from 380 to 545 C, graded in{sub x}Al{sub 1{minus}x}As(x = 0.05 {minus} 0.32) buffer layers grown at high temperatures ({approximately}520 C), and graded In{sub x}Ga{sub 1{minus}x}As (x = 0.05 {minus} 0.33) buffer layers and In{sub 0.4}Ga{sub 0.6}As/In{sub 0.26}Al{sub 0.35}Ga{sub 0.39}As SLSs grown at low temperatures ({approximately}400 C) have the lowest RMS roughness. Also, for SLSs InAs{sub 0.21}Sb{sub 0.79}/InSb, undoped layers grown at 470 C were smoother than undoped layers grown at 420 C and Be-doped layers grown at 470 C. These results illustrate the role of surface tension in the growth of strained layer materials near the melting temperature of the InAs{sub x}Sb{sub {minus}x}/InSb superlattice. Nomarski interference and transmission electron microscopies, IR photoluminescence, x-ray diffraction, and photocurrent spectroscopy were also used to evaluate the relative quality of the material but usually, the results were not conclusive.

  12. Effects of electrolyte gating on photoluminescence spectra of large-area WSe2 monolayer films

    NASA Astrophysics Data System (ADS)

    Matsuki, Keiichiro; Pu, Jiang; Kozawa, Daichi; Matsuda, Kazunari; Li, Lain-Jong; Takenobu, Taishi

    2016-06-01

    We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (∼107 V cm‑1) and the accumulation of high carrier density (>1013 cm‑2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation.

  13. A Simple Approach for Molecular Controlled Release based on Atomic Layer Deposition Hybridized Organic-Inorganic Layers

    NASA Astrophysics Data System (ADS)

    Boehler, Christian; Güder, Firat; Kücükbayrak, Umut M.; Zacharias, Margit; Asplund, Maria

    2016-01-01

    On-demand release of bioactive substances with high spatial and temporal control offers ground-breaking possibilities in the field of life sciences. However, available strategies for developing such release systems lack the possibility of combining efficient control over release with adequate storage capability in a reasonably compact system. In this study we present a new approach to target this deficiency by the introduction of a hybrid material. This organic-inorganic material was fabricated by atomic layer deposition of ZnO into thin films of polyethylene glycol, forming the carrier matrix for the substance to be released. Sub-surface growth mechanisms during this process converted the liquid polymer into a solid, yet water-soluble, phase. This layer permits extended storage for various substances within a single film of only a few micrometers in thickness, and hence demands minimal space and complexity. Improved control over release of the model substance Fluorescein was achieved by coating the hybrid material with a conducting polymer film. Single dosage and repetitive dispensing from this system was demonstrated. Release was controlled by applying a bias potential of ±0.5 V to the polymer film enabling or respectively suppressing the expulsion of the model drug. In vitro tests showed excellent biocompatibility of the presented system.

  14. A Simple Approach for Molecular Controlled Release based on Atomic Layer Deposition Hybridized Organic-Inorganic Layers

    PubMed Central

    Boehler, Christian; Güder, Firat; Kücükbayrak, Umut M.; Zacharias, Margit; Asplund, Maria

    2016-01-01

    On-demand release of bioactive substances with high spatial and temporal control offers ground-breaking possibilities in the field of life sciences. However, available strategies for developing such release systems lack the possibility of combining efficient control over release with adequate storage capability in a reasonably compact system. In this study we present a new approach to target this deficiency by the introduction of a hybrid material. This organic-inorganic material was fabricated by atomic layer deposition of ZnO into thin films of polyethylene glycol, forming the carrier matrix for the substance to be released. Sub-surface growth mechanisms during this process converted the liquid polymer into a solid, yet water-soluble, phase. This layer permits extended storage for various substances within a single film of only a few micrometers in thickness, and hence demands minimal space and complexity. Improved control over release of the model substance Fluorescein was achieved by coating the hybrid material with a conducting polymer film. Single dosage and repetitive dispensing from this system was demonstrated. Release was controlled by applying a bias potential of ±0.5 V to the polymer film enabling or respectively suppressing the expulsion of the model drug. In vitro tests showed excellent biocompatibility of the presented system. PMID:26791399

  15. Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores

    NASA Astrophysics Data System (ADS)

    Pardon, Gaspard; Gatty, Hithesh K.; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

    2013-01-01

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al2O3) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al2O3 layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al2O3 using ALD.

  16. A Simple Approach for Molecular Controlled Release based on Atomic Layer Deposition Hybridized Organic-Inorganic Layers.

    PubMed

    Boehler, Christian; Güder, Firat; Kücükbayrak, Umut M; Zacharias, Margit; Asplund, Maria

    2016-01-01

    On-demand release of bioactive substances with high spatial and temporal control offers ground-breaking possibilities in the field of life sciences. However, available strategies for developing such release systems lack the possibility of combining efficient control over release with adequate storage capability in a reasonably compact system. In this study we present a new approach to target this deficiency by the introduction of a hybrid material. This organic-inorganic material was fabricated by atomic layer deposition of ZnO into thin films of polyethylene glycol, forming the carrier matrix for the substance to be released. Sub-surface growth mechanisms during this process converted the liquid polymer into a solid, yet water-soluble, phase. This layer permits extended storage for various substances within a single film of only a few micrometers in thickness, and hence demands minimal space and complexity. Improved control over release of the model substance Fluorescein was achieved by coating the hybrid material with a conducting polymer film. Single dosage and repetitive dispensing from this system was demonstrated. Release was controlled by applying a bias potential of ± 0.5 V to the polymer film enabling or respectively suppressing the expulsion of the model drug. In vitro tests showed excellent biocompatibility of the presented system. PMID:26791399

  17. Atomic-scale friction modulated by potential corrugation in multi-layered graphene materials

    SciTech Connect

    Zhuang, Chunqiang; Liu, Lei

    2015-03-21

    Friction is an important issue that has to be carefully treated for the fabrication of graphene-based nano-scale devices. So far, the friction mechanism of graphene materials on the atomic scale has not yet been clearly presented. Here, first-principles calculations were employed to unveil the friction behaviors and their atomic-scale mechanism. We found that potential corrugations on sliding surfaces dominate the friction force and the friction anisotropy of graphene materials. Higher friction forces correspond to larger corrugations of potential energy, which are tuned by the number of graphene layers. The friction anisotropy is determined by the regular distributions of potential energy. The sliding along a fold-line path (hollow-atop-hollow) has a relatively small potential energy barrier. Thus, the linear sliding observed in macroscopic friction experiments may probably be attributed to the fold-line sliding mode on the atomic scale. These findings can also be extended to other layer-structure materials, such as molybdenum disulfide (MoS{sub 2}) and graphene-like BN sheets.

  18. Evolution of magnetically rotating arc into large area arc plasma

    NASA Astrophysics Data System (ADS)

    Wang, Cheng; Li, Wan-Wan; Zhang, Xiao-Ning; Zha, Jun; Xia, Wei-Dong

    2015-06-01

    An arc channel tends to shrink due to its conductivity increasing with the increase of temperature. In this study, to generate large area arc plasma, we construct a magnetically rotating arc plasma generator, which mainly consists of a lanthanide tungsten cathode (13 mm in diameter), a concentric cylindrical graphite anode chamber (60 mm in diameter) and a solenoid coil for producing an axial magnet field. By controlling the cold gas flow, the magnetically rotating arc evolves from constricted mode to diffuse mode, which almost fills the whole arc chamber cross section. Results show that the diffuse arc plasma has better uniformity and stability. The formation mechanism of large area arc plasma is discussed in this paper. Project supported by the National Natural Science Foundation of China (Grant Nos. 11035005, 11475174, and 50876101) and the Science Instrument Foundation of the Chinese Academy of Sciences (Grant No. Y201162).

  19. Progress on large-area polarization grating fabrication

    NASA Astrophysics Data System (ADS)

    Miskiewicz, Matthew N.; Kim, Jihwan; Li, Yanming; Komanduri, Ravi K.; Escuti, Michael J.

    2012-06-01

    Over the last several years, we have pioneered liquid crystal polarization gratings (PGs), in both switchable and polymer versions. We have also introduced their use in many applications, including mechanical/non-mechanical laser beam steering and polarization imaging/sensing. Until now, conventional holographic congurations were used to create PGs where the diameter of the active area was limited to 1-2 inches. In this paper, we discuss a new holography setup to fabricate large area PGs using spherical waves as the diverging coherent beams. Various design parameters of this setup are examined for impact on the quality of the recorded PG profile. Using this setup, we demonstrate a large area polymer PG with approximately 66 inch square area, and present detailed characterization.

  20. Transferred metal electrode films for large-area electronic devices

    SciTech Connect

    Yang, Jin-Guo; Kam, Fong-Yu; Chua, Lay-Lay

    2014-11-10

    The evaporation of metal-film gate electrodes for top-gate organic field-effect transistors (OFETs) limits the minimum thickness of the polymer gate dielectric to typically more than 300 nm due to deep hot metal atom penetration and damage of the dielectric. We show here that the self-release layer transfer method recently developed for high-quality graphene transfer is also capable of giving high-quality metal thin-film transfers to produce high-performance capacitors and OFETs with superior dielectric breakdown strength even for ultrathin polymer dielectric films. Dielectric breakdown strengths up to 5–6 MV cm{sup −1} have been obtained for 50-nm thin films of polystyrene and a cyclic olefin copolymer TOPAS{sup ®} (Zeon). High-quality OFETs with sub-10 V operational voltages have been obtained this way using conventional polymer dielectrics and a high-mobility polymer semiconductor poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene-2,5-diyl]. The transferred metal films can make reliable contacts without damaging ultrathin polymer films, self-assembled monolayers and graphene, which is not otherwise possible from evaporated or sputtered metal films.

  1. Effect of interlayer interactions on exciton luminescence in atomic-layered MoS2 crystals

    PubMed Central

    Kim, Jung Gon; Yun, Won Seok; Jo, Sunghwan; Lee, JaeDong; Cho, Chang-Hee

    2016-01-01

    The atomic-layered semiconducting materials of transition metal dichalcogenides are considered effective light sources with both potential applications in thin and flexible optoelectronics and novel functionalities. In spite of the great interest in optoelectronic properties of two-dimensional transition metal dichalcogenides, the excitonic properties still need to be addressed, specifically in terms of the interlayer interactions. Here, we report the distinct behavior of the A and B excitons in the presence of interlayer interactions of layered MoS2 crystals. Micro-photoluminescence spectroscopic studies reveal that on the interlayer interactions in double layer MoS2 crystals, the emission quantum yield of the A exciton is drastically changed, whereas that of the B exciton remains nearly constant for both single and double layer MoS2 crystals. First-principles density functional theory calculations confirm that a significant charge redistribution occurs in the double layer MoS2 due to the interlayer interactions producing a local electric field at the interfacial region. Analogous to the quantum-confined Stark effect, we suggest that the distinct behavior of the A and B excitons can be explained by a simplified band-bending model. PMID:27416744

  2. Effect of interlayer interactions on exciton luminescence in atomic-layered MoS2 crystals.

    PubMed

    Kim, Jung Gon; Yun, Won Seok; Jo, Sunghwan; Lee, JaeDong; Cho, Chang-Hee

    2016-01-01

    The atomic-layered semiconducting materials of transition metal dichalcogenides are considered effective light sources with both potential applications in thin and flexible optoelectronics and novel functionalities. In spite of the great interest in optoelectronic properties of two-dimensional transition metal dichalcogenides, the excitonic properties still need to be addressed, specifically in terms of the interlayer interactions. Here, we report the distinct behavior of the A and B excitons in the presence of interlayer interactions of layered MoS2 crystals. Micro-photoluminescence spectroscopic studies reveal that on the interlayer interactions in double layer MoS2 crystals, the emission quantum yield of the A exciton is drastically changed, whereas that of the B exciton remains nearly constant for both single and double layer MoS2 crystals. First-principles density functional theory calculations confirm that a significant charge redistribution occurs in the double layer MoS2 due to the interlayer interactions producing a local electric field at the interfacial region. Analogous to the quantum-confined Stark effect, we suggest that the distinct behavior of the A and B excitons can be explained by a simplified band-bending model. PMID:27416744

  3. Atom-scale depth localization of biologically important chemical elements in molecular layers

    PubMed Central

    Schneck, Emanuel; Scoppola, Ernesto; Drnec, Jakub; Mocuta, Cristian; Felici, Roberto; Novikov, Dmitri; Fragneto, Giovanna; Daillant, Jean

    2016-01-01

    In nature, biomolecules are often organized as functional thin layers in interfacial architectures, the most prominent examples being biological membranes. Biomolecular layers play also important roles in context with biotechnological surfaces, for instance, when they are the result of adsorption processes. For the understanding of many biological or biotechnologically relevant phenomena, detailed structural insight into the involved biomolecular layers is required. Here, we use standing-wave X-ray fluorescence (SWXF) to localize chemical elements in solid-supported lipid and protein layers with near-Ångstrom precision. The technique complements traditional specular reflectometry experiments that merely yield the layers’ global density profiles. While earlier work mostly focused on relatively heavy elements, typically metal ions, we show that it is also possible to determine the position of the comparatively light elements S and P, which are found in the most abundant classes of biomolecules and are therefore particularly important. With that, we overcome the need of artificial heavy atom labels, the main obstacle to a broader application of high-resolution SWXF in the fields of biology and soft matter. This work may thus constitute the basis for the label-free, element-specific structural investigation of complex biomolecular layers and biological surfaces. PMID:27503887

  4. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    SciTech Connect

    Fiorentino, Giuseppe Morana, Bruno; Forte, Salvatore; Sarro, Pasqualina Maria

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  5. Effect of interlayer interactions on exciton luminescence in atomic-layered MoS2 crystals

    NASA Astrophysics Data System (ADS)

    Kim, Jung Gon; Yun, Won Seok; Jo, Sunghwan; Lee, Jaedong; Cho, Chang-Hee

    2016-07-01

    The atomic-layered semiconducting materials of transition metal dichalcogenides are considered effective light sources with both potential applications in thin and flexible optoelectronics and novel functionalities. In spite of the great interest in optoelectronic properties of two-dimensional transition metal dichalcogenides, the excitonic properties still need to be addressed, specifically in terms of the interlayer interactions. Here, we report the distinct behavior of the A and B excitons in the presence of interlayer interactions of layered MoS2 crystals. Micro-photoluminescence spectroscopic studies reveal that on the interlayer interactions in double layer MoS2 crystals, the emission quantum yield of the A exciton is drastically changed, whereas that of the B exciton remains nearly constant for both single and double layer MoS2 crystals. First-principles density functional theory calculations confirm that a significant charge redistribution occurs in the double layer MoS2 due to the interlayer interactions producing a local electric field at the interfacial region. Analogous to the quantum-confined Stark effect, we suggest that the distinct behavior of the A and B excitons can be explained by a simplified band-bending model.

  6. High Energy Astrophysics with the Fermi Large Area Telescope

    NASA Technical Reports Server (NTRS)

    Hays, Elizabeth

    2009-01-01

    This slide presentation reviews some of the findings of the Large Area Telescope (LAT) aboard the Fermi Observatory. It includes information about the LAT, and the Gamma-Ray Burst Monitor (GBM), detection of the quiet sun and the moon in gamma rays, Pulsars observed by the observatory, Globular Star Clusters, Active Galactic Nucleus, and Gamma-Ray Bursts, with specific information about GRB 080916C.

  7. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  8. Characterization of Large Area APDs for the EXO-200 Detector

    SciTech Connect

    Neilson, R.; LePort, F.; Pocar, A.; Kumar, K.; Odian, A.; Prescott, C.Y.; Tenev, V.; Ackerman, N.; Akimov, D.; Auger, M.; Benitez-Medina, C.; Breidenbach, M.; Burenkov, A.; Conley, R.; Cook, S.; deVoe, R.; Dolinski, M.J.; Fairbank, W., Jr.; Farine, J.; Fierlinger, P.; Flatt, B.; /Stanford U., Phys. Dept. /Bern U., LHEP /Stanford U., Phys. Dept. /Maryland U. /Colorado State U. /Laurentian U. /Carleton U. /SLAC /Maryland U. /Moscow, ITEP /Alabama U. /SLAC /Colorado State U. /Stanford U., Phys. Dept. /Alabama U. /Stanford U., Phys. Dept. /Alabama U. /SLAC /Carleton U. /SLAC /Maryland U. /Moscow, ITEP /Carleton U. /Stanford U., Phys. Dept. /Bern U., LHEP /SLAC /Laurentian U. /SLAC /Maryland U.

    2011-12-02

    EXO-200 uses 468 large area avalanche photodiodes (LAAPDs) for detection of scintillation light in an ultra-low-background liquid xenon (LXe) detector. We describe initial measurements of dark noise, gain and response to xenon scintillation light of LAAPDs at temperatures from room temperature to 169 K - the temperature of liquid xenon. We also describe the individual characterization of more than 800 LAAPDs for selective installation in the EXO-200 detector.

  9. Atomic-layer molybdenum sulfide optical modulator for visible coherent light

    NASA Astrophysics Data System (ADS)

    Zhang, Yuxia; Wang, Shuxian; Yu, Haohai; Zhang, Huaijin; Chen, Yanxue; Mei, Liangmo; di Lieto, Alberto; Tonelli, Mauro; Wang, Jiyang

    2015-06-01

    Coherent light sources in the visible range are playing important roles in our daily life and modern technology, since about 50% of the capability of the our human brains is devoted to processing visual information. Visible lasers can be achieved by nonlinear optical process of infrared lasers and direct lasing of gain materials, and the latter has advantages in the aspects of compactness, efficiency, simplicity, etc. However, due to lack of visible optical modulators, the directly generated visible lasers with only a gain material are constrained in continuous-wave operation. Here, we demonstrated the fabrication of a visible optical modulator and pulsed visible lasers based on atomic-layer molybdenum sulfide (MoS2), a ultrathin two-dimensional material with about 9-10 layers. By employing the nonlinear absorption of the modulator, the pulsed orange, red and deep red lasers were directly generated. Besides, the present atomic-layer MoS2 optical modulator has broadband modulating properties and advantages in the simple preparation process. The present results experimentally verify the theoretical prediction for the low-dimensional optoelectronic modulating devices in the visible wavelength region and may open an attractive avenue for removing a stumbling block for the further development of pulsed visible lasers.

  10. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition.

    PubMed

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Shaygan, Mehrdad; Turner, Kevin T; Bargatin, Igor

    2016-04-15

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young's modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young's modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed. PMID:26926386

  11. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Shaygan, Mehrdad; Turner, Kevin T.; Bargatin, Igor

    2016-04-01

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young’s modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young’s modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed.

  12. Observation of anomalous Stokes versus anti-Stokes ratio in MoTe2 atomic layers

    NASA Astrophysics Data System (ADS)

    Goldstein, Thomas; Chen, Shao-Yu; Xiao, Di; Ramasubramaniam, Ashwin; Yan, Jun

    We grow hexagonal molybdenum ditelluride (MoTe2), a prototypical transition metal dichalcogenide (TMDC) semiconductor, with chemical vapor transport methods and investigate its atomic layers with Stokes and anti-Stokes Raman scattering. We report observation of all six types of zone center optical phonons. Quite remarkably, the anti-Stokes Raman intensity of the low energy layer-breathing mode becomes more intense than the Stokes peak under certain experimental conditions, creating an illusion of 'negative temperature'. This effect is tunable, and can be switched from anti-Stokes enhancement to suppression by varying the excitation wavelength. We interpret this observation to be a result of resonance effects arising from the C excitons in the vicinity of the Brillouin zone center, which are robust even for multiple layers of MoTe2. The intense anti-Stokes Raman scattering provides a cooling channel for the crystal and opens up opportunities for laser cooling of atomically thin TMDC semiconductor devices. Supported by the University of Massachusetts Amherst, the National Science Foundation Center for Hierarchical Manufacturing (CMMI-1025020) and Office of Emerging Frontiers in Research and Innovation (EFRI-1433496).

  13. Atomic-layer molybdenum sulfide optical modulator for visible coherent light

    PubMed Central

    Zhang, Yuxia; Wang, Shuxian; Yu, Haohai; Zhang, Huaijin; Chen, Yanxue; Mei, Liangmo; Di Lieto, Alberto; Tonelli, Mauro; Wang, Jiyang

    2015-01-01

    Coherent light sources in the visible range are playing important roles in our daily life and modern technology, since about 50% of the capability of the our human brains is devoted to processing visual information. Visible lasers can be achieved by nonlinear optical process of infrared lasers and direct lasing of gain materials, and the latter has advantages in the aspects of compactness, efficiency, simplicity, etc. However, due to lack of visible optical modulators, the directly generated visible lasers with only a gain material are constrained in continuous-wave operation. Here, we demonstrated the fabrication of a visible optical modulator and pulsed visible lasers based on atomic-layer molybdenum sulfide (MoS2), a ultrathin two-dimensional material with about 9–10 layers. By employing the nonlinear absorption of the modulator, the pulsed orange, red and deep red lasers were directly generated. Besides, the present atomic-layer MoS2 optical modulator has broadband modulating properties and advantages in the simple preparation process. The present results experimentally verify the theoretical prediction for the low-dimensional optoelectronic modulating devices in the visible wavelength region and may open an attractive avenue for removing a stumbling block for the further development of pulsed visible lasers. PMID:26067821

  14. A study of highly crystalline novel beryllium oxide film using atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Yum, J. H.; Akyol, T.; Lei, M.; Ferrer, D. A.; Hudnall, Todd. W.; Downer, M.; Bielawski, C. W.; Bersuker, G.; Lee, J. C.; Banerjee, S. K.

    2011-11-01

    Beryllium oxide (BeO), which has excellent electrical insulating characteristics and high thermal stability, is a promising gate dielectric and interface passivation layer (IPL), because of its high energy bandgap (10.6 eV) and short bond distance between Be and O atoms. In a previous study, we demonstrated the excellent electrical and physical characteristics of BeO grown after atomic layer deposition (ALD) on Si and GaAs substrates. Here we report, for the first time, ALD growth of crystalline BeO as a potential high-k gate dielectric and IPL. From TEM, SAD, RHEED, and XRD, we have found that highly crystalline BeO thin film may be grown in a wurtzite structure as a (101) plane on a Si (100) oriented surface. We have also investigated a germanium epitaxial layer grown on BeO as a semiconductor-on-insulator (SOI) application, and the crystallinity of BeO on a GaAs (100) substrate for III-V MOS device applications.

  15. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    SciTech Connect

    Mantovan, R. Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G.; Chikoidze, E.; Dumont, Y.; Fanciulli, M.

    2014-05-07

    R-Fe-O (R = rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850 °C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  16. Atomic-layer molybdenum sulfide optical modulator for visible coherent light.

    PubMed

    Zhang, Yuxia; Wang, Shuxian; Yu, Haohai; Zhang, Huaijin; Chen, Yanxue; Mei, Liangmo; Di Lieto, Alberto; Tonelli, Mauro; Wang, Jiyang

    2015-01-01

    Coherent light sources in the visible range are playing important roles in our daily life and modern technology, since about 50% of the capability of the our human brains is devoted to processing visual information. Visible lasers can be achieved by nonlinear optical process of infrared lasers and direct lasing of gain materials, and the latter has advantages in the aspects of compactness, efficiency, simplicity, etc. However, due to lack of visible optical modulators, the directly generated visible lasers with only a gain material are constrained in continuous-wave operation. Here, we demonstrated the fabrication of a visible optical modulator and pulsed visible lasers based on atomic-layer molybdenum sulfide (MoS2), a ultrathin two-dimensional material with about 9-10 layers. By employing the nonlinear absorption of the modulator, the pulsed orange, red and deep red lasers were directly generated. Besides, the present atomic-layer MoS2 optical modulator has broadband modulating properties and advantages in the simple preparation process. The present results experimentally verify the theoretical prediction for the low-dimensional optoelectronic modulating devices in the visible wavelength region and may open an attractive avenue for removing a stumbling block for the further development of pulsed visible lasers. PMID:26067821

  17. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor

    NASA Astrophysics Data System (ADS)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G.

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnOx-CVD layers.

  18. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    PubMed

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers. PMID:24089868

  19. Advanced Large Area Plastic Scintillator Project (ALPS): Final Report

    SciTech Connect

    Jordan, David V.; Reeder, Paul L.; Todd, Lindsay C.; Warren, Glen A.; McCormick, Kathleen R.; Stephens, Daniel L.; Geelhood, Bruce D.; Alzheimer, James M.; Crowell, Shannon L.; Sliger, William A.

    2008-02-05

    The advanced Large-Area Plastic Scintillator (ALPS) Project at Pacific Northwest National Laboratory investigated possible technological avenues for substantially advancing the state-of-the-art in gamma-ray detection via large-area plastic scintillators. The three predominant themes of these investigations comprised the following: * Maximizing light collection efficiency from a single large-area sheet of plastic scintillator, and optimizing hardware event trigger definition to retain detection efficiency while exploiting the power of coincidence to suppress single-PMT "dark current" background; * Utilizing anti-Compton vetoing and supplementary spectral information from a co-located secondary, or "Back" detector, to both (1) minimize Compton background in the low-energy portion of the "Front" scintillator's pulse-height spectrum, and (2) sharpen the statistical accuracy of the front detector's low-energy response prediction as impelmented in suitable energy-windowing algorithms; and * Investigating alternative materials to enhance the intrinsic gamma-ray detection efficiency of plastic-based sensors.

  20. Large area nanostructured arrays: optical properties of metallic nanotubes.

    PubMed

    Fröhlich, Katja; Hojati-Talemi, Pejman; Bishop, Matthew; Zuber, Kamil; Murphy, Peter; Evans, Drew

    2013-05-01

    In this study, large area metallic nanotube arrays on flexible plastic substrates are produced by templating the growth of a cosputtered alloy using anodized aluminum oxide membranes. These nanotube arrays are prepared over large areas (ca. squared centimeters) by reducing the residual stress within the thin multilayered structure. The nanotubes are approximately 20 nm in inner diameter, having walls of <10 nm in thickness, and are arranged in a close packed configuration. Optically the nanotube arrays exhibit light trapping behavior (not plasmonic), where the reflectivity is less than 15% across the visible spectra compared to >40% for a flat sample using the same alloy. When the nanotubes are exposed to high relative humidity, they spontaneously fill, with a concomitant change in their visual appearance. The filling of the nanotubes is confirmed using contact angle measurements, with the nanotubes displaying a strong hydrophilic character compared to the weak behavior of the flat sample. The ability to easily fabricate large area nanotube arrays which display exotic behavior paves the way for their uptake in real world applications such as sensors and solar energy devices. PMID:23582083

  1. Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions.

    PubMed

    George, Steven M; Lee, Younghee

    2016-05-24

    Thermal atomic layer etching (ALE) of Al2O3 and HfO2 using sequential, self-limiting fluorination and ligand-exchange reactions was recently demonstrated using HF and tin acetylacetonate (Sn(acac)2) as the reactants. This new thermal pathway for ALE represents the reverse of atomic layer deposition (ALD) and should lead to isotropic etching. Atomic layer deposition and ALE can together define the atomic layer growth and removal steps required for advanced semiconductor fabrication. The thermal ALE of many materials should be possible using fluorination and ligand-exchange reactions. The chemical details of ligand-exchange can lead to selective ALE between various materials. Thermal ALE could produce conformal etching in high-aspect-ratio structures. Thermal ALE could also yield ultrasmooth thin films based on deposit/etch-back methods. Enhancement of ALE rates and possible anisotropic ALE could be achieved using radicals or ions together with thermal ALE. PMID:27216115

  2. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    SciTech Connect

    Kerr, A. J.; Chagarov, E.; Kaufman-Osborn, T.; Kummel, A. C.; Gu, S.; Wu, J.; Asbeck, P. M.; Madisetti, S.; Oktyabrsky, S.

    2014-09-14

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)

  3. Controlled Phase and Tunable Magnetism in Ordered Iron Oxide Nanotube Arrays Prepared by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Yijun; Liu, Ming; Peng, Bin; Zhou, Ziyao; Chen, Xing; Yang, Shu-Ming; Jiang, Zhuang-De; Zhang, Jie; Ren, Wei; Ye, Zuo-Guang

    2016-01-01

    Highly-ordered and conformal iron oxide nanotube arrays on an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidization states and tunable magnetic properties between superparamagnetism and ferrimagnetism. Non-magnetic α-Fe2O3 and superparamagnetic Fe3O4 with a blocking temperature of 120 K are in-situ obtained by finely controlling the oxidation reaction. Both of them exhibit a very small grain size of only several nanometers due to the nature of atom-by-atom growth of the ALD technique. Post-annealing α-Fe2O3 in a reducing atmosphere leads to the formation of the spinel Fe3O4 phase which displays a distinct ferrimagnetic anisotropy and the Verwey metal-insulator transition that usually takes place only in single crystal magnetite or thick epitaxial films at low temperatures. The ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano-devices to be used in catalysis, spintronics, microelectronics, data storages and bio-applications.

  4. Controlled Phase and Tunable Magnetism in Ordered Iron Oxide Nanotube Arrays Prepared by Atomic Layer Deposition.

    PubMed

    Zhang, Yijun; Liu, Ming; Peng, Bin; Zhou, Ziyao; Chen, Xing; Yang, Shu-Ming; Jiang, Zhuang-De; Zhang, Jie; Ren, Wei; Ye, Zuo-Guang

    2016-01-01

    Highly-ordered and conformal iron oxide nanotube arrays on an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidization states and tunable magnetic properties between superparamagnetism and ferrimagnetism. Non-magnetic α-Fe2O3 and superparamagnetic Fe3O4 with a blocking temperature of 120 K are in-situ obtained by finely controlling the oxidation reaction. Both of them exhibit a very small grain size of only several nanometers due to the nature of atom-by-atom growth of the ALD technique. Post-annealing α-Fe2O3 in a reducing atmosphere leads to the formation of the spinel Fe3O4 phase which displays a distinct ferrimagnetic anisotropy and the Verwey metal-insulator transition that usually takes place only in single crystal magnetite or thick epitaxial films at low temperatures. The ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano-devices to be used in catalysis, spintronics, microelectronics, data storages and bio-applications. PMID:26813143

  5. Controlled Phase and Tunable Magnetism in Ordered Iron Oxide Nanotube Arrays Prepared by Atomic Layer Deposition

    DOE PAGESBeta

    Zhang, Yijun; Liu, Ming; Peng, Bin; Zhou, Ziyao; Chen, Xing; Yang, Shu-Ming; Jiang, Zhuang-De; Zhang, Jie; Ren, Wei; Ye, Zuo-Guang

    2016-01-27

    Highly-ordered and conformal iron oxide nanotube arrays on an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidization states and tunable magnetic properties between superparamagnetism and ferrimagnetism. Non-magnetic α-Fe2O3 and superparamagnetic Fe2O3with a blocking temperature of 120 K are in-situ obtained by finely controlling the oxidation reaction. Both of them exhibit a very small grain size of only several nanometers due to the nature of atom-by-atom growth of the ALD technique. Post-annealing α-Fe2O3 in a reducing atmosphere leads to the formation of the spinel Fe3O4 phase which displays a distinct ferrimagnetic anisotropy and the Verwey metal-insulatormore » transition that usually takes place only in single crystal magnetite or thick epitaxial films at low temperatures. Finally, the ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano-devices to be used in catalysis, spintronics, microelectronics, data storages and bio-applications.« less

  6. Controlled Phase and Tunable Magnetism in Ordered Iron Oxide Nanotube Arrays Prepared by Atomic Layer Deposition

    PubMed Central

    Zhang, Yijun; Liu, Ming; Peng, Bin; Zhou, Ziyao; Chen, Xing; Yang, Shu-Ming; Jiang, Zhuang-De; Zhang, Jie; Ren, Wei; Ye, Zuo-Guang

    2016-01-01

    Highly-ordered and conformal iron oxide nanotube arrays on an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidization states and tunable magnetic properties between superparamagnetism and ferrimagnetism. Non-magnetic α-Fe2O3 and superparamagnetic Fe3O4 with a blocking temperature of 120 K are in-situ obtained by finely controlling the oxidation reaction. Both of them exhibit a very small grain size of only several nanometers due to the nature of atom-by-atom growth of the ALD technique. Post-annealing α-Fe2O3 in a reducing atmosphere leads to the formation of the spinel Fe3O4 phase which displays a distinct ferrimagnetic anisotropy and the Verwey metal-insulator transition that usually takes place only in single crystal magnetite or thick epitaxial films at low temperatures. The ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano-devices to be used in catalysis, spintronics, microelectronics, data storages and bio-applications. PMID:26813143

  7. Mechanical and structural characterization of atomic layer deposition-based ZnO films

    NASA Astrophysics Data System (ADS)

    Tapily, K.; Gu, D.; Baumgart, H.; Namkoong, G.; Stegall, D.; Elmustafa, A. A.

    2011-11-01

    Zinc oxide thin films were deposited by atomic layer deposition (ALD). The structural and mechanical properties of the thin films were investigated by x-ray diffraction, transmission electron microscopy, atomic force microscopy, and nanoindentation. Diethyl zinc was used as the chemical precursor for zinc and water vapor was used as the oxidation agent. The samples were deposited at 150 °C and at a pressure of 2.1 × 10-1 Torr in the ALD reactor. A growth rate of 2 Å per cycle was calculated in the ALD process window. The Nano Indenter XP was used in conjunction with the continuous stiffness method in depth control mode in order to measure and to analyze the mechanical properties of hardness and modulus of ALD ZnO thin film samples. For comparison, we benchmarked the mechanical properties of single crystal bulk ZnO samples against those of our ALD ZnO thin films.

  8. Layer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates

    PubMed Central

    Yamauchi, Ryosuke; Hamasaki, Yosuke; Shibuya, Takuto; Saito, Akira; Tsuchimine, Nobuo; Koyama, Koji; Matsuda, Akifumi; Yoshimoto, Mamoru

    2015-01-01

    Thin-film epitaxy is critical for investigating the original properties of materials. To obtain epitaxial films, careful consideration of the external conditions, i.e. single-crystal substrate, temperature, deposition pressure and fabrication method, is significantly important. In particular, selection of the single-crystal substrate is the first step towards fabrication of a high-quality film. Sapphire (single-crystalline α-Al2O3) is commonly used in industry as a thin-film crystal-growth substrate, and functional thin-film materials deposited on sapphire substrates have found industrial applications. However, while sapphire is a single crystal, two types of atomic planes exist in accordance with step height. Here we discuss the need to consider the lattice mismatch for each of the sapphire atomic layers. Furthermore, through cross-sectional transmission electron microscopy analysis, we demonstrate the uniepitaxial growth of cubic crystalline thin films on bistepped sapphire (0001) substrates. PMID:26402241

  9. Stabilization of copper catalysts for liquid-phase reactions by atomic layer deposition.

    PubMed

    O'Neill, Brandon J; Jackson, David H K; Crisci, Anthony J; Farberow, Carrie A; Shi, Fengyuan; Alba-Rubio, Ana C; Lu, Junling; Dietrich, Paul J; Gu, Xiangkui; Marshall, Christopher L; Stair, Peter C; Elam, Jeffrey W; Miller, Jeffrey T; Ribeiro, Fabio H; Voyles, Paul M; Greeley, Jeffrey; Mavrikakis, Manos; Scott, Susannah L; Kuech, Thomas F; Dumesic, James A

    2013-12-16

    Atomic layer deposition (ALD) of an alumina overcoat can stabilize a base metal catalyst (e.g., copper) for liquid-phase catalytic reactions (e.g., hydrogenation of biomass-derived furfural in alcoholic solvents or water), thereby eliminating the deactivation of conventional catalysts by sintering and leaching. This method of catalyst stabilization alleviates the need to employ precious metals (e.g., platinum) in liquid-phase catalytic processing. The alumina overcoat initially covers the catalyst surface completely. By using solid state NMR spectroscopy, X-ray diffraction, and electron microscopy, it was shown that high temperature treatment opens porosity in the overcoat by forming crystallites of γ-Al2 O3 . Infrared spectroscopic measurements and scanning tunneling microscopy studies of trimethylaluminum ALD on copper show that the remarkable stability imparted to the nanoparticles arises from selective armoring of under-coordinated copper atoms on the nanoparticle surface. PMID:24282166

  10. Atomic and electronic structures of a transition layer at the CrN/Cr interface

    NASA Astrophysics Data System (ADS)

    Zhang, Zaoli; Daniel, Rostislav; Mitterer, Christain

    2011-08-01

    By spherical aberration (CS)-corrected high-resolution transmission electron microscopy (HRTEM) and electron energy-loss spectroscopy (EELS), the atomic and electronic structures at the CrN/Cr interface are studied. A transition layer is formed at the CrN/Cr interface, which is identified as hexagonal Cr2N. The atomic structures at the interfaces are revealed. The elemental concentration distribution across the interface was quantified by EELS. The fine structures of Cr-L2,3 in Cr, CrN, and Cr2N exhibit a subtle difference. The Cr-L2,3 edge in CrN shows a noticeable chemical shift as compared to Cr and Cr2N, accompanied by a slight variation at the corresponding N-K edge.

  11. Tuning negative differential resistance in single-atomic layer boron-silicon sheets

    SciTech Connect

    Zhou, Ming-Yue; Liu, Chun-Sheng E-mail: yanxh@njupt.edu.cn; Yan, Xiaohong E-mail: yanxh@njupt.edu.cn

    2015-03-21

    Using density functional theory and nonequilibrium Green's function formalism for quantum transport calculation, we have quantified the ballistic transport properties along different directions in two-dimensional boron-silicon (B-Si) compounds, as well as the current response to bias voltage. The conductance of the most B-Si devices is higher than the conductance of one-atom-thick boron and silicene. Furthermore, the negative differential resistance phenomenon can be found at certain B-Si stoichiometric composition, and it occurs at various bias voltages. Also, the peak-to-valley ratio is sensitive to the B-Si composition and dependent of the direction considered for B-Si monolayers. The present findings could be helpful for applications of the single-atomic layer B-Si sheets in the field of semiconductor devices or low-dimensional electronic devices.

  12. Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes

    SciTech Connect

    Sowa, Mark J.

    2014-01-15

    Chamber wall conditions, such as wall temperature and film deposits, have long been known to influence plasma source performance on thin film processing equipment. Plasma physical characteristics depend on conductive/insulating properties of chamber walls. Radical fluxes depend on plasma characteristics as well as wall recombination rates, which can be wall material and temperature dependent. Variations in substrate delivery of plasma generated species (radicals, ions, etc.) impact the resulting etch or deposition process resulting in process drift. Plasma enhanced atomic layer deposition is known to depend strongly on substrate radical flux, but film properties can be influenced by other plasma generated phenomena, such as ion bombardment. In this paper, the chamber wall conditions on a plasma enhanced atomic layer deposition process are investigated. The downstream oxygen radical and ion fluxes from an inductively coupled plasma source are indirectly monitored in temperature controlled (25–190 °C) stainless steel and quartz reactors over a range of oxygen flow rates. Etch rates of a photoresist coated quartz crystal microbalance are used to study the oxygen radical flux dependence on reactor characteristics. Plasma density estimates from Langmuir probe ion saturation current measurements are used to study the ion flux dependence on reactor characteristics. Reactor temperature was not found to impact radical and ion fluxes substantially. Radical and ion fluxes were higher for quartz walls compared to stainless steel walls over all oxygen flow rates considered. The radical flux to ion flux ratio is likely to be a critical parameter for the deposition of consistent film properties. Reactor wall material, gas flow rate/pressure, and distance from the plasma source all impact the radical to ion flux ratio. These results indicate maintaining chamber wall conditions will be important for delivering consistent results from plasma enhanced atomic layer deposition

  13. Large Area Transition Edge Sensor X-ray Microcalorimeters for Diffuse X-ray Background Studies

    NASA Astrophysics Data System (ADS)

    Morgan, K. M.; Busch, S. E.; Eckart, M. E.; Kilbourne, C. A.; McCammon, D.

    2014-08-01

    We are developing transition edge sensor (TES) mirocalorimeters with large area (0.72 mm) absorbers to study the keV diffuse X-ray background. The goal is to develop a 2 cm array of 256 pixels for a sounding rocket payload. We present a pixel design which includes a Mo/Au bilayer TES coupled to a large (850 x 850 x 0.2 m) gold absorber. Our simulations indicate that such a design can achieve energy resolution as good as 1.6 eV FWHM in our target bandpass of 0.05-1 keV. Additionally, thermal modelling shows that for typical gold layers, the position-dependent variation of the pulse shape over the large area of the absorber is not expected to significantly degrade this energy resolution. An array of devices will be fabricated in late 2013 to test this design.

  14. Performance of the Anti-Coincidence Detector on the GLAST Large Area Telescope

    SciTech Connect

    Thompson, D.J.; Charles, E.; Hartman, R.C.; Moiseev, A.A.; Ormes, J.F.; /NASA, Goddard /Denver U.

    2007-10-22

    The Anti-Coincidence Detector (ACD), the outermost detector layer in the Gamma-ray Large Area Space Telescope (GLAST) Large Area Telescope (LAT), is designed to detect and veto incident cosmic ray charged particles, which outnumber cosmic gamma rays by 3-4 orders of magnitude. The challenge in ACD design is that it must have high (0.9997) detection efficiency for singly-charged relativistic particles, but must also have a low probability for self-veto of high-energy gammas by backsplash radiation from interactions in the LAT calorimeter. Simulations and tests demonstrate that the ACD meets its design requirements. The performance of the ACD has remained stable through stand-alone environmental testing, shipment across the U.S., installation onto the LAT, shipment back across the U.S., LAT environmental testing, and shipment to Arizona. As part of the fully-assembled GLAST observatory, the ACD is being readied for final testing before launch.

  15. Catalytic Growth of Graphene: Toward Large-Area Single-Crystalline Graphene.

    PubMed

    Ago, Hiroki; Ogawa, Yui; Tsuji, Masaharu; Mizuno, Seigi; Hibino, Hiroki

    2012-08-16

    For electronic applications, synthesis of large-area, single-layer graphene with high crystallinity is required. One of the most promising and widely employed methods is chemical vapor deposition (CVD) using Cu foil/film as the catalyst. However, the CVD graphene is generally polycrystalline and contains a significant amount of domain boundaries that limit intrinsic physical properties of graphene. In this Perspective, we discuss the growth mechanism of graphene on a Cu catalyst and review recent development in the observation and control of the domain structure of graphene. We emphasize the importance of the growth condition and crystallinity of the Cu catalyst for the realization of large-area, single-crystalline graphene. PMID:26295775

  16. Engineering topological superconductors using surface atomic-layer/molecule hybrid materials.

    PubMed

    Uchihashi, Takashi

    2015-08-28

    Surface atomic-layer (SAL) superconductors consisting of epitaxially grown metal adatoms on a clean semiconductor surface have been recently established. Compared to conventional metal thin films, they have two important features: (i) space-inversion symmetry-breaking throughout the system and (ii) high sensitivity to surface adsorption of foreign species. These potentially lead to manifestation of the Rashba effect and a Zeeman field exerted by adsorbed magnetic organic molecules. After introduction of the archetypical SAL superconductor Si(111)-(√7 × √3)-In, we describe how these features are utilized to engineer a topological superconductor with Majorana fermions and discuss its promises and expected challenges. PMID:26234824

  17. Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte

    PubMed Central

    Ji, Sanghoon; Tanveer, Waqas Hassan; Yu, Wonjong; Kang, Sungmin; Cho, Gu Young; Kim, Sung Han

    2015-01-01

    Summary Solid oxide fuel cells with atomic layer-deposited thin film electrolytes supported on anodic aluminum oxide (AAO) are electrochemically characterized with varying thickness of bottom electrode catalyst (BEC); BECs which are 0.5 and 4 times thicker than the size of AAO pores are tested. The thicker BEC ensures far more active mass transport on the BEC side and resultantly the thicker BEC cell generates ≈11 times higher peak power density than the thinner BEC cell at 500 °C. PMID:26425432

  18. Evolution of crystal structure during the initial stages of ZnO atomic layer deposition

    DOE PAGESBeta

    Boichot, R.; Tian, L.; Richard, M. -I.; Crisci, A.; Chaker, A.; Cantelli, V.; Coindeau, S.; Lay, S.; Ouled, T.; Guichet, C.; et al

    2016-01-05

    In this study, a complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al2O3(001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films depend strongly on the nature of the interfacial bonds.

  19. Microwave absorption properties of carbon nanocoils coated with highly controlled magnetic materials by atomic layer deposition.

    PubMed

    Wang, Guizhen; Gao, Zhe; Tang, Shiwei; Chen, Chaoqiu; Duan, Feifei; Zhao, Shichao; Lin, Shiwei; Feng, Yuhong; Zhou, Lei; Qin, Yong

    2012-12-21

    In this work, atomic layer deposition is applied to coat carbon nanocoils with magnetic Fe(3)O(4) or Ni. The coatings have a uniform and highly controlled thickness. The coated nanocoils with coaxial multilayer nanostructures exhibit remarkably improved microwave absorption properties compared to the pristine carbon nanocoils. The enhanced absorption ability arises from the efficient complementarity between complex permittivity and permeability, chiral morphology, and multilayer structure of the products. This method can be extended to exploit other composite materials benefiting from its convenient control of the impedance matching and combination of dielectric-magnetic multiple loss mechanisms for microwave absorption applications. PMID:23171130

  20. Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Kim, Choong-Ki; Ahn, Hyun Jun; Moon, Jung Min; Lee, Sukwon; Moon, Dong-II; Park, Jeong Soo; Cho, Byung-Jin; Choi, Yang-Kyu; Lee, Seok-Hee

    2015-12-01

    The effects of the deposition temperature on titanium carbide film formed by atomic layer deposition are investigated for gate workfunction (WF) engineering. As the deposition temperature increases from 250 °C to 500 °C, the WF of the TiC decreases from 5.24 eV to 4.45 eV. This WF dependency on the deposition temperature is mainly attributed to the average WF of each orientation of the sub-planes of the TiC film. An investigation of a tunable WF is conducted through Auger electron spectroscopy, transmission electron microscopy, and X-ray diffraction.

  1. Photonic crystal thin films of GaAs prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Povey, I. M.; Whitehead, D.; Thomas, K.; Pemble, M. E.; Bardosova, M.; Renard, J.

    2006-09-01

    Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.

  2. Atomic Layer Deposition of Pt Nanoparticles for Microengine with Promoted Catalytic Motion.

    PubMed

    Jiang, Chi; Huang, Gaoshan; Ding, Shi-Jin; Dong, Hongliang; Men, Chuanling; Mei, Yongfeng

    2016-12-01

    Nanoparticle-decorated tubular microengines were synthesized by a combination of rolled-up nanotechnology and atomic layer deposition. The presence of Pt nanoparticles with different sizes and distributions on the walls of microengines fabricated from bilayer nanomembranes with different materials results in promoted catalytic reaction efficiency, which leads to an ultrafast speed (the highest speed 3200 μm/s). The motion speed of the decorated microengines fits the theoretical model very well, suggesting that the larger surface area is mainly responsible for the acceleration of the motion speed. The high-speed nanoparticle-decorated microengines hold considerable promise for a variety of applications. PMID:27295257

  3. Resistive memory switching in ultrathin TiO2 films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Sahu, V. K.; Misra, P.; Ajimsha, R. S.; Das, A. K.; Joshi, M. P.; Kukreja, L. M.

    2016-05-01

    Electric field controlled forming free and unipolar resistive memory switching was observed in Au/TiO2/Pt devices containing ultrathin TiO2 films of thickness ~ 4 nm grown by atomic layer deposition. These devices showed a large resistance ratio of ~ 103 between high and low resistance states along with appreciable time retention for ~ 104 seconds and endurance. The spread of reset and set voltages was from ~ 0.4-0.6 V and 1.1-1.5 V respectively with a clear window between them. The resistive switching mechanism was explained based on conductive filamentary model.

  4. Atomic layer epitaxy of II-VI quantum wells and superlattices

    NASA Astrophysics Data System (ADS)

    Faschinger, W.

    1993-01-01

    Atomic Layer Epitaxy (ALE) under ultra high vacuum conditions is a variation of MBE which makes use of a self-regulating growth process, leading to digital growth in steps of monolayers or even fractions of monolayers. We report on fundamental aspects of the ALE growth of tellurides and selenides, and give three examples on the physics of ALE-grown structures: (a) Phonon confinement in CdTe/ZnTe superlattices (b) "Spin Sheet" superlattices of cubic MnTe with CdTe and (c) Luminescence tuning in ultra-thin CdSe quantum wells embedded in ZnSe.

  5. Suppressed grain-boundary scattering in atomic layer deposited Nb:TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Niemelä, Janne-Petteri; Hirose, Yasushi; Shigematsu, Kei; Sano, Masahito; Hasegawa, Tetsuya; Karppinen, Maarit

    2015-11-01

    We have fabricated high-quality thin films of the transparent conducting anatase Nb:TiO2 on glass substrates through atomic layer deposition, and a subsequent reductive heat treatment of the as-deposited amorphous films. Hall-effect measurements and Drude-fitting of the Vis-NIR spectra indicate that for lightly doped films deposited at temperatures around 170 °C, grain boundary scattering becomes negligible and the mobility is predominately limited by phonon-electron scattering inherent to the anatase lattice and by impurities. Simultaneously, such lighter doping leads to reduced plasma absorption, thereby improving material's performance as a transparent conductor.

  6. Transition in electron scattering mechanism in atomic layer deposited Nb:TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Niemelä, Janne-Petteri; Hirose, Yasushi; Hasegawa, Tetsuya; Karppinen, Maarit

    2015-01-01

    We characterized transport and optical properties of atomic layer deposited Nb:TiO2 thin films on glass substrates. These promising transparent conducting oxide (TCO) materials show minimum resistivity of 1.0 × 10-3 Ω cm at 300 K and high transmittance in the visible range. Low-temperature (2-300 K) Hall measurements and the Drude fitting of the Vis-NIR optical spectra indicate a transition in the scattering mechanism from grain boundary scattering to intra-grain scattering with increasing Nb content, thus underlining enhancement of the grain size in the low doping regime as the key for further improved TCO properties.

  7. Atomic Layer Deposition of Pt Nanoparticles for Microengine with Promoted Catalytic Motion

    NASA Astrophysics Data System (ADS)

    Jiang, Chi; Huang, Gaoshan; Ding, Shi-Jin; Dong, Hongliang; Men, Chuanling; Mei, Yongfeng

    2016-06-01

    Nanoparticle-decorated tubular microengines were synthesized by a combination of rolled-up nanotechnology and atomic layer deposition. The presence of Pt nanoparticles with different sizes and distributions on the walls of microengines fabricated from bilayer nanomembranes with different materials results in promoted catalytic reaction efficiency, which leads to an ultrafast speed (the highest speed 3200 μm/s). The motion speed of the decorated microengines fits the theoretical model very well, suggesting that the larger surface area is mainly responsible for the acceleration of the motion speed. The high-speed nanoparticle-decorated microengines hold considerable promise for a variety of applications.

  8. Improvement and protection of niobium surface superconductivity by atomic layer deposition and heat treatment

    SciTech Connect

    Proslier, T.; Zasadzinski, J.; Moore, J.; Pellin, M.; Elam, J.; Cooley, L.; Antoine, C.; /Saclay

    2008-11-01

    A method to treat the surface of Nb is described, which potentially can improve the performance of superconducting rf cavities. We present tunneling and x-ray photoemission spectroscopy measurements at the surface of cavity-grade niobium samples coated with a 3 nm alumina overlayer deposited by atomic layer deposition. The coated samples baked in ultrahigh vacuum at low temperature degraded superconducting surface. However, at temperatures above 450 C, the tunneling conductance curves show significant improvements in the superconducting density of states compared with untreated surfaces.

  9. Highly porous metal oxide networks of interconnected nanotubes by atomic layer deposition.

    PubMed

    Li, Fengbin; Yao, Xueping; Wang, Zhaogen; Xing, Weihong; Jin, Wanqin; Huang, Jun; Wang, Yong

    2012-09-12

    Mesoporous metal oxide networks composed of interconnected nanotubes with ultrathin tube walls down to 3 nm and high porosity up to 90% were fabricated by atomic layer deposition (ALD) of alumina or titania onto templates of swelling-induced porous block copolymers. The nanotube networks possessed dual sets of interconnected pores separated by the tube wall whose thickness could be finely tuned by altering ALD cycles. Because of the excellent pore interconnectivity and high porosity, the alumina nanotube networks showed superior humidity-sensing performances. PMID:22888959

  10. Direct dark modes excitation in bi-layered enantiomeric atoms-based metasurface through symmetry matching.

    PubMed

    Bochkova, Elena; Burokur, Shah Nawaz; de Lustrac, André; Lupu, Anatole

    2016-01-15

    We provide evidence for the mechanism of direct dark mode excitation in a metasurface composed of bi-layered Z-shaped enantiomeric meta-atoms. The electromagnetic behavior of the structure is investigated through both numerical simulations and experimental measurements in the microwave domain. We demonstrate direct field coupling excitation of second higher order electric mode under normal incidence based only on symmetry matching conditions. The proposed approach provides a better flexibility in engineering dark mode resonances that do not rely on hybridization mechanism and presents important advantages for multi-spectral sensor applications. PMID:26766727

  11. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    DOEpatents

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  12. Quantum dots protected from oxidative attack using alumina shells synthesized by atomic layer deposition.

    PubMed

    Yin, B; Sadtler, B; Berezin, M Y; Thimsen, E

    2016-09-25

    Applications of luminescent quantum dots require the materials to be stable under a wide range of temperatures, photon fluxes and chemical environments. In this work, we demonstrate that Al2O3 shells synthesized by atomic layer deposition on films of CdTe quantum dots are effective to prevent chemical degradation for up to 17 hours under continuous illumination at 90 °C in ambient air. Control samples with no Al2O3 coating experienced extensive oxidation and severe quenching of the photoluminescence intensity under these conditions. PMID:27550790

  13. Atomic layer deposition of quaternary oxide (La,Sr)CoO3-δ thin films.

    PubMed

    Ahvenniemi, E; Matvejeff, M; Karppinen, M

    2015-05-01

    A novel atomic layer deposition (ALD) process was developed for fabricating quaternary cobalt oxide (La1-xSrx)CoO3-δ thin films having the eye on future applications of such films in e.g. solid oxide fuel cell cathodes, oxygen separation membranes or thermocouples. The deposition parameters and the conditions of a subsequent annealing step were systematically investigated, and using the thus optimized parameters the cation stoichiometry in the films could be accurately tuned. The most detailed study was conducted for x = 0.7, i.e. the composition with the highest application potential within the (La1-xSrx)CoO3-δ system. PMID:25826428

  14. Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte.

    PubMed

    Ji, Sanghoon; Tanveer, Waqas Hassan; Yu, Wonjong; Kang, Sungmin; Cho, Gu Young; Kim, Sung Han; An, Jihwan; Cha, Suk Won

    2015-01-01

    Solid oxide fuel cells with atomic layer-deposited thin film electrolytes supported on anodic aluminum oxide (AAO) are electrochemically characterized with varying thickness of bottom electrode catalyst (BEC); BECs which are 0.5 and 4 times thicker than the size of AAO pores are tested. The thicker BEC ensures far more active mass transport on the BEC side and resultantly the thicker BEC cell generates ≈11 times higher peak power density than the thinner BEC cell at 500 °C. PMID:26425432

  15. Surface modification of yttria-stabilized zirconia electrolyte by atomic layer deposition.

    PubMed

    Chao, Cheng-Chieh; Kim, Young Beom; Prinz, Fritz B

    2009-10-01

    Yttria-stabilized zirconia (YSZ) electrolyte membranes were surface modified by adding a 1 nm thin, high-yttria concentration YSZ film with the help of atomic layer deposition. The addition of the 1 nm film led to an increase of the maximum power density of a low-temperature solid oxide fuel cell (LT-SOFC) by a factor of 1.50 at 400 degrees C. The enhanced performance can be attributed to an increased oxide ion incorporation rate on the surface of the modified electrolyte. PMID:19824708

  16. Fabrication process of carbon nanotube field effect transistors using atomic layer deposition passivation for biosensors.

    PubMed

    Nakashima, Yasuhiro; Ohno, Yutaka; Kishimoto, Shigeru; Okochi, Mina; Honda, Hiroyuki; Mizutani, Takashi

    2010-06-01

    Fabrication process of the carbon nanotube (CNT) field effect transistors (FETs) for biosensors was studied. Atomic layer deposition (ALD) of HfO2 was applied to the deposition of the passivation/gate insulator film. The CNT-FETs did not show the drain current degradation after ALD passivation even though the passivation by Si3N4 deposited by plasma-enhanced chemical vapor deposition (PECVD) resulted in a significant drain current decrease. This indicates the advantage of the present ALD technique in terms of the damage suppression. The biosensing operation was confirmed using thus fabricated CNT-FETs. PMID:20355371

  17. Growth mechanism of atomic layer deposition of zinc oxide: A density functional theory approach

    SciTech Connect

    Afshar, Amir; Cadien, Kenneth C.

    2013-12-16

    Atomic layer deposition of zinc oxide (ZnO) using diethylzinc (DEZ) and water is studied using density functional theory. The reaction pathways between the precursors and ZnO surface sites are discussed. Both reactions proceed by the formation of intermediate complexes on the surface. The Gibbs free energy of the formation of these complexes is positive at temperatures above ∼120 °C and ∼200 °C for DEZ and water half-reactions, respectively. Spectroscopic ellipsometry results show that the growth per cycle changes at approximately the same temperatures.

  18. Engineering topological superconductors using surface atomic-layer/molecule hybrid materials

    NASA Astrophysics Data System (ADS)

    Uchihashi, Takashi

    2015-08-01

    Surface atomic-layer (SAL) superconductors consisting of epitaxially grown metal adatoms on a clean semiconductor surface have been recently established. Compared to conventional metal thin films, they have two important features: (i) space-inversion symmetry-breaking throughout the system and (ii) high sensitivity to surface adsorption of foreign species. These potentially lead to manifestation of the Rashba effect and a Zeeman field exerted by adsorbed magnetic organic molecules. After introduction of the archetypical SAL superconductor Si(111)-(√7 × √3)-In, we describe how these features are utilized to engineer a topological superconductor with Majorana fermions and discuss its promises and expected challenges.

  19. Atomic layer epitaxy of AlAs and AlGaAs

    NASA Astrophysics Data System (ADS)

    Meguro, T.; Iwai, S.; Aoyagi, Y.; Ozaki, K.; Yamamoto, Y.; Suzuki, T.; Okano, Y.; Hirata, A.

    1990-01-01

    Atomic layer epitaxy (ALE) of AlAs and AlGaAs with metalorganic vapor-phase epitaxy (MOVPE) under Ar-ion laser irradiation has been successfully realized in a triethylaluminum (TEA)/AsH 3 system for the first time. Comparison with the growth characteristics of MOVPE with alternative feeding modes of TMA/AsH 3 and TEA/AsH 3 is discussed. Application to laser-ALE of AlGaAs using a triethylgallium (TEG)/TEA/AsH 3 system is also discussed.

  20. Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

    SciTech Connect

    An Jihwan; Beom Kim, Young; Sun Park, Joong; Hyung Shim, Joon; Guer, Turgut M.; Prinz, Fritz B.

    2012-01-15

    The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals.

  1. In situ study of atomic layer deposition Al2O3 on GaP (100)

    NASA Astrophysics Data System (ADS)

    Dong, H.; Brennan, B.; Qin, X.; Zhernokletov, D. M.; Hinkle, C. L.; Kim, J.; Wallace, R. M.

    2013-09-01

    The interfacial chemistry of atomic layer deposition (ALD) of Al2O3 on chemically treated GaP (100) has been studied using in situ X-ray photoelectron spectroscopy. A "self-cleaning" effect for Ga-oxide upon exposure to trimethylaluminum is seen to be efficient on the native oxide and chemically treated surfaces. The phosphorus oxide chemical states are seen to change during the ALD process, but the total concentration of P-oxides is seen to remain constant throughout the ALD process.

  2. GaAs interfacial self-cleaning by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Hinkle, C. L.; Sonnet, A. M.; Vogel, E. M.; McDonnell, S.; Hughes, G. J.; Milojevic, M.; Lee, B.; Aguirre-Tostado, F. S.; Choi, K. J.; Kim, H. C.; Kim, J.; Wallace, R. M.

    2008-02-01

    The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy. Using the combination of in situ deposition and analysis techniques, the interfacial "self-cleaning" is shown to be oxidation state dependent as well as metal organic precursor dependent. Thermodynamics, charge balance, and oxygen coordination drive the removal of certain species of surface oxides while allowing others to remain. These factors suggest proper selection of surface treatments and ALD precursors can result in selective interfacial bonding arrangements.

  3. Chemical Vapor Deposition Synthesis and Raman Spectroscopic Characterization of Large-Area Graphene Sheets

    NASA Astrophysics Data System (ADS)

    Liao, Chun-Da; Lu, Yi-Ying; Tamalampudi, Srinivasa Reddy; Cheng, Hung-Chieh; Chen, Yit-Tsong

    2013-10-01

    We present a chemical vapor deposition (CVD) method to catalytically synthesize large-area, transferless, single- to few-layer graphene sheets using hexamethyldisilazane (HMDS) on a SiO2/Si substrate as a carbon source and thermally evaporated alternating Ni/Cu/Ni layers as a catalyst. The as-synthesized graphene films were characterized by Raman spectroscopic imaging to identify single- to few-layer sheets. This HMDS-derived graphene layer is continuous over the entire growth substrate, and single- to trilayer mixed sheets can be up to 30 -m in the lateral dimension. With the synthetic CVD method proposed here, graphene can be grown into tailored shapes directly on a SiO2/Si surface through vapor priming of HMDS onto predefined photolithographic patterns. The transparent and conductive HMDS-derived graphene exhibits its potential for widespread electronic and opto-electronic applications.

  4. Atomic-layer surface reaction of chlorine on Si and Ge assisted by an ultraclean ECR plasma

    NASA Astrophysics Data System (ADS)

    Matsuura, T.; Sugiyama, T.; Murota, J.

    1998-05-01

    Atomic-layer surface adsorption and reaction of chlorine on Si(100) and Ge(100) as well as Si 0.5Ge 0.5(100) assisted by low-energy Ar + ion irradiation were investigated using an ultraclean ECR plasma system with surface analysis by XPS and FTIR/RAS. Hydrogen termination on Si and Ge prepared by HF-treatment or annealing in H 2 was removed by Ar + ion irradiation, and that on Ge was removed, while not on Si, only by the chlorine molecular supply. By repeating alternate chlorine molecular supply (≳0.02 Pa·s) and Ar + ion irradiation (˜4×10 15 cm -2), atomic-layer etching of Si, Ge, and Si 0.5Ge 0.5 was observed with a saturated etch rate per cycle of 1/4 atomic-layer thickness. When Ar + ion irradiation was increased further under a condition of saturated chlorine molecular adsorption, the etch rate per cycle tended to increase with Ar + ion irradiation up to a saturation value of the single atomic-layer thickness. The Ge atoms indicated a higher reactivity than the Si atoms in the atomic-layer etching.

  5. Application of atomic layer deposited microchannel plates to imaging photodetectors with high time resolution

    NASA Astrophysics Data System (ADS)

    Siegmund, O. H. W.; McPhate, J. B.; Tremsin, A. S.; Vallerga, J. V.; Ertley, C. D.; Richner, N. J.; Gerard, T. M.; Frisch, H. J.; Elam, J. W.; Mane, A. U.; Wagner, R. G.; Minot, M. J.; O`Mahony, A.; Craven, C. A.

    2015-07-01

    Novel microchannel plates have been constructed using borosilicate glass micro-capillary array substrates with 20 μm and 10 μm pores and coated with resistive, and secondary electron emissive, layers by atomic layer deposition. Microchannel plates in 33 mm, 50 mm and 20 cm square formats have been made and tested. Although their amplification, imaging, and timing properties are comparable to standard glass microchannel plates, the background rates and lifetime characteristics are considerably improved. Sealed tube detectors based on the Planacon tube, and a 25 mm cross delay line readout tube with a GaN(Mg) opaque photocathode deposited on borosilicate microchannel plates have been fabricated. Considerable progress has also been made with 20 cm microchannel plates for a 20 cm format sealed tube sensor with strip-line readout that is being developed for Cherenkov light detection.

  6. Electrowetting properties of atomic layer deposited Al2O3 decorated silicon nanowires

    NASA Astrophysics Data System (ADS)

    Rajkumar, K.; Rajavel, K.; Cameron, D. C.; Mangalaraj, D.; Rajendrakumar, R. T.

    2015-06-01

    This paper reports the electrowetting properties of liquid droplet on superhydrophobic silicon nanowires with Atomic layer deposited (ALD) Al2O3 as dielectric layer. Silicon wafer were etched by metal assisted wet chemical etching with silver as catalyst. ALD Al2O3 films of 10nm thickness were conformally deposited over silicon nanowires. Al2O3 dielectric film coated silicon nanowires was chemically modified with Trichloro (1H, 1H, 2H, 2H-perfluorooctyl) silane to make it superhydrophobic(SHP). The contact angle was measured and all the samples exhibited superhydrophobic nature with maximum contact angles of 163° and a minimum contact angle hysteresis of 6°. Electrowetting induced a maximum reversible decrease of the contact angle of 20°at 150V in air.

  7. Modeling and optimization of atomic layer deposition processes on vertically aligned carbon nanotubes.

    PubMed

    Yazdani, Nuri; Chawla, Vipin; Edwards, Eve; Wood, Vanessa; Park, Hyung Gyu; Utke, Ivo

    2014-01-01

    Many energy conversion and storage devices exploit structured ceramics with large interfacial surface areas. Vertically aligned carbon nanotube (VACNT) arrays have emerged as possible scaffolds to support large surface area ceramic layers. However, obtaining conformal and uniform coatings of ceramics on structures with high aspect ratio morphologies is non-trivial, even with atomic layer deposition (ALD). Here we implement a diffusion model to investigate the effect of the ALD parameters on coating kinetics and use it to develop a guideline for achieving conformal and uniform thickness coatings throughout the depth of ultra-high aspect ratio structures. We validate the model predictions with experimental data from ALD coatings of VACNT arrays. However, the approach can be applied to predict film conformality as a function of depth for any porous topology, including nanopores and nanowire arrays. PMID:24778944

  8. Atomic layer deposition to prevent metal transfer from implants: An X-ray fluorescence study

    NASA Astrophysics Data System (ADS)

    Bilo, Fabjola; Borgese, Laura; Prost, Josef; Rauwolf, Mirjam; Turyanskaya, Anna; Wobrauschek, Peter; Kregsamer, Peter; Streli, Christina; Pazzaglia, Ugo; Depero, Laura E.

    2015-12-01

    We show that Atomic Layer Deposition is a suitable coating technique to prevent metal diffusion from medical implants. The metal distribution in animal bone tissue with inserted bare and coated Co-Cr alloys was evaluated by means of micro X-ray fluorescence mapping. In the uncoated implant, the migration of Co and Cr particles from the bare alloy in the biological tissues is observed just after one month and the number of particles significantly increases after two months. In contrast, no metal diffusion was detected in the implant coated with TiO2. Instead, a gradient distribution of the metals was found, from the alloy surface going into the tissue. No significant change was detected after two months of aging. As expected, the thicker is the TiO2 layer, the lower is the metal migration.

  9. Atomic layer deposition of Al-doped ZnO thin films

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  10. Atomic layer growth of oxide thin films with perovskite-type structure by reactive evaporation

    NASA Astrophysics Data System (ADS)

    Iijima, K.; Terashima, T.; Bando, Y.; Kamigaki, K.; Terauchi, H.

    1992-10-01

    Epitaxial growth of BaTiO3 and SrTiO3 films by the reactive evaporation method was investigated using reflection high-energy electron diffraction (RHEED). The investigations were carried out using two growth methods: coevaporation and alternate evaporation of the metal elements in an oxygen atmosphere. Atomic layer growth was achieved by the alternate supply of Ba or Sr and Ti on the growing surface. In the case of coevaporation, epitaxial growth occurred in a two-dimensional unit-cell-by-unit-cell mode. The surface of each unit cell is terminated by a (TiO2) layer. Artificial superlattices of BaTiO3/SrTiO3 were fabricated by monitoring the film thickness with the RHEED oscillations.

  11. Modeling and optimization of atomic layer deposition processes on vertically aligned carbon nanotubes

    PubMed Central

    Yazdani, Nuri; Chawla, Vipin; Edwards, Eve; Wood, Vanessa

    2014-01-01

    Summary Many energy conversion and storage devices exploit structured ceramics with large interfacial surface areas. Vertically aligned carbon nanotube (VACNT) arrays have emerged as possible scaffolds to support large surface area ceramic layers. However, obtaining conformal and uniform coatings of ceramics on structures with high aspect ratio morphologies is non-trivial, even with atomic layer deposition (ALD). Here we implement a diffusion model to investigate the effect of the ALD parameters on coating kinetics and use it to develop a guideline for achieving conformal and uniform thickness coatings throughout the depth of ultra-high aspect ratio structures. We validate the model predictions with experimental data from ALD coatings of VACNT arrays. However, the approach can be applied to predict film conformality as a function of depth for any porous topology, including nanopores and nanowire arrays. PMID:24778944

  12. Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.

    PubMed

    Lin, Yu-Chuan; Chang, Chih-Yuan S; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J; Robinson, Jeremy T; Wallace, Robert M; Mayer, Theresa S; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A

    2014-12-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF). PMID:25383798

  13. Improved oxidation resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels

    SciTech Connect

    Smith, Sean W.; Matthews, David J.; Conley, John F.; Buesch, Christian; Simonsen, John

    2014-07-01

    Cellulose nanocrystal (CNC) aerogels are coated with thin conformal layers of Al{sub 2}O{sub 3} using atomic layer deposition to form hybrid organic/inorganic nanocomposites. Electron probe microanalysis and scanning electron microscopy analysis indicated the Al{sub 2}O{sub 3} penetrated more than 1500 μm into the aerogel for extended precursor pulse and exposure/purge times. The measured profile of coated fiber radius versus depth from the aerogel surface agrees well with simulations of precursor penetration depth in modeled aerogel structures. Thermogravimetric analysis shows that Al{sub 2}O{sub 3} coated CNC aerogel nanocomposites do not show significant thermal degradation below 295 °C as compared with 175 °C for uncoated CNC aerogels, an improvement of over 100 °C.

  14. Intrinsic electron traps in atomic-layer deposited HfO2 insulators

    NASA Astrophysics Data System (ADS)

    Cerbu, F.; Madia, O.; Andreev, D. V.; Fadida, S.; Eizenberg, M.; Breuil, L.; Lisoni, J. G.; Kittl, J. A.; Strand, J.; Shluger, A. L.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A.

    2016-05-01

    Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around Et ≈ 2.0 eV and Et ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO2 layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO2, suggesting that alternative defect models should be considered.

  15. Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition

    SciTech Connect

    Otto, Martin; Kroll, Matthias; Kaesebier, Thomas; Tuennermann, Andreas; Salzer, Roland; Wehrspohn, Ralf B.

    2012-05-07

    We investigate the optical and opto-electronic properties of black silicon (b-Si) nanostructures passivated with Al{sub 2}O{sub 3}. The b-Si nanostructures significantly improve the absorption of silicon due to superior anti-reflection and light trapping properties. By coating the b-Si nanostructures with a conformal layer of Al{sub 2}O{sub 3} by atomic layer deposition, the surface recombination velocity can be effectively reduced. We show that control of plasma-induced subsurface damage is equally important to achieve low interface recombination. Surface recombination velocities of S{sub eff}<13 cm/s have been measured for an optimized structure which, like the polished reference, exhibits lifetimes in the millisecond range.

  16. Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells

    SciTech Connect

    Mahuli, Neha; Sarkar, Shaibal K.

    2015-01-15

    Atomic layer deposition (ALD) of TiS{sub 2} is investigated with titanium tetrachloride and hydrogen sulfide precursors. In-situ quartz crystal microbalance and ex-situ x-ray reflectivity measurements are carried out to study self-limiting deposition chemistry and material growth characteristics. The saturated growth rate is found to be ca. 0.5 Å/cycle within the ALD temperature window of 125–200 °C. As grown material is found poorly crystalline. ALD grown TiS{sub 2} is applied as a photon harvesting material for solid state sensitized solar cells with TiO{sub 2} as electron transport medium. Initial results with Spiro-OMeTAD as hole conducting layer show ca. 0.6% energy conversion efficiency under 1 sun illumination.

  17. Atomic/molecular layer deposition: a direct gas-phase route to crystalline metal-organic framework thin films.

    PubMed

    Ahvenniemi, E; Karppinen, M

    2016-01-21

    Atomic/molecular layer deposition offers us an elegant way of fabricating crystalline copper(ii)terephthalate metal-organic framework (MOF) thin films on various substrate surfaces. The films are grown from two gaseous precursors with a digital atomic/molecular level control for the film thickness under relatively mild conditions in a simple and fast one-step process. PMID:26612265

  18. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics.

    PubMed

    Wu, Wenzhuo; Wang, Lei; Li, Yilei; Zhang, Fan; Lin, Long; Niu, Simiao; Chenet, Daniel; Zhang, Xian; Hao, Yufeng; Heinz, Tony F; Hone, James; Wang, Zhong Lin

    2014-10-23

    The piezoelectric characteristics of nanowires, thin films and bulk crystals have been closely studied for potential applications in sensors, transducers, energy conversion and electronics. With their high crystallinity and ability to withstand enormous strain, two-dimensional materials are of great interest as high-performance piezoelectric materials. Monolayer MoS2 is predicted to be strongly piezoelectric, an effect that disappears in the bulk owing to the opposite orientations of adjacent atomic layers. Here we report the first experimental study of the piezoelectric properties of two-dimensional MoS2 and show that cyclic stretching and releasing of thin MoS2 flakes with an odd number of atomic layers produces oscillating piezoelectric voltage and current outputs, whereas no output is observed for flakes with an even number of layers. A single monolayer flake strained by 0.53% generates a peak output of 15 mV and 20 pA, corresponding to a power density of 2 mW m(-2) and a 5.08% mechanical-to-electrical energy conversion efficiency. In agreement with theoretical predictions, the output increases with decreasing thickness and reverses sign when the strain direction is rotated by 90°. Transport measurements show a strong piezotronic effect in single-layer MoS2, but not in bilayer and bulk MoS2. The coupling between piezoelectricity and semiconducting properties in two-dimensional nanomaterials may enable the development of applications in powering nanodevices, adaptive bioprobes and tunable/stretchable electronics/optoelectronics. PMID:25317560

  19. Controllable fabrication of nanostructured materials for photoelectrochemical water splitting via atomic layer deposition.

    PubMed

    Wang, Tuo; Luo, Zhibin; Li, Chengcheng; Gong, Jinlong

    2014-11-21

    Photoelectrochemical (PEC) water splitting is an attractive approach to generate hydrogen as a clean chemical fuel from solar energy. But there remain many fundamental issues to be solved, including inadequate photon absorption, short carrier diffusion length, surface recombination, vulnerability to photo-corrosion, and unfavorable reaction kinetics. Owing to its self-limiting surface reaction mechanism, atomic layer deposition (ALD) is capable of depositing thin films in a highly controllable manner, which makes it an enabling technique to overcome some of the key challenges confronted by PEC water splitting. This tutorial review describes some unique and representative applications of ALD in fabricating high performance PEC electrodes with various nanostructures, including (i) coating conformal thin films on three-dimensional scaffolds to facilitate the separation and migration of photocarriers and enhance light trapping, as well as realizing controllable doping for bandgap engineering and forming homojunctions for carrier separation; (ii) achieving surface modification through deposition of anti-corrosion layers, surface state passivation layers, and surface catalytic layers; and (iii) identifying the main rate limiting steps with model electrodes with highly defined thickness, composition, and interfacial structure. PMID:24500041

  20. Ultrathin two-dimensional atomic crystals as stable interfacial layer for improvement of lithium metal anode.

    PubMed

    Yan, Kai; Lee, Hyun-Wook; Gao, Teng; Zheng, Guangyuan; Yao, Hongbin; Wang, Haotian; Lu, Zhenda; Zhou, Yu; Liang, Zheng; Liu, Zhongfan; Chu, Steven; Cui, Yi

    2014-10-01

    Stable cycling of lithium metal anode is challenging due to the dendritic lithium formation and high chemical reactivity of lithium with electrolyte and nearly all the materials. Here, we demonstrate a promising novel electrode design by growing two-dimensional (2D) atomic crystal layers including hexagonal boron nitride (h-BN) and graphene directly on Cu metal current collectors. Lithium ions were able to penetrate through the point and line defects of the 2D layers during the electrochemical deposition, leading to sandwiched lithium metal between ultrathin 2D layers and Cu. The 2D layers afford an excellent interfacial protection of Li metal due to their remarkable chemical stability as well as mechanical strength and flexibility, resulting from the strong intralayer bonds and ultrathin thickness. Smooth Li metal deposition without dendritic and mossy Li formation was realized. We showed stable cycling over 50 cycles with Coulombic efficiency ∼97% in organic carbonate electrolyte with current density and areal capacity up to the practical value of 2.0 mA/cm(2)and 5.0 mAh/cm(2), respectively, which is a significant improvement over the unprotected electrodes in the same electrolyte. PMID:25166749

  1. Atomic layer deposition of Fe{sub 2}O{sub 3} using ferrocene and ozone.

    SciTech Connect

    Martinson, A. B. F.; DeVries, M. J.; Libera, J. A.; Christensen, S. T.; Hupp, J. T.; Pellin, M. J.; Elam, J. W.

    2011-02-22

    Growing interest in Fe{sub 2}O{sub 3} as a light harvesting layer in solar energy conversion devices stems from its unique combination of stability, nontoxicity, and exceptionally low material cost. Unfortunately, the known methods for conformally coating high aspect ratio structures with Fe{sub 2}O{sub 3} leave a glaring gap in the technologically relevant temperature range of 170-350 C. Here, we elucidate a self-limiting atomic layer deposition (ALD) process for the growth of hematite, {alpha}-Fe{sub 2}O{sub 3}, over a moderate temperature window using ferrocene and ozone. At 200 C, the self-limiting growth of Fe{sub 2}O{sub 3} is observed at rates up to 1.4 {angstrom}/cycle. Dense and robust thin films grown on both fused quartz and silicon exhibit the expected optical bandgap (2.1 eV). In situ mass spectrometric analysis reveals the evolution of two distinct cyclic reaction products during the layer-by-layer growth. The readily available and relatively high vapor pressure iron precursor is utilized to uniformly coat a high surface area template with aspect ratio 150.

  2. Sealing of hard CrN and DLC coatings with atomic layer deposition.

    PubMed

    Härkönen, Emma; Kolev, Ivan; Díaz, Belén; Swiatowska, Jolanta; Maurice, Vincent; Seyeux, Antoine; Marcus, Philippe; Fenker, Martin; Toth, Lajos; Radnoczi, György; Vehkamäki, Marko; Ritala, Mikko

    2014-02-12

    Atomic layer deposition (ALD) is a thin film deposition technique that is based on alternating and saturating surface reactions of two or more gaseous precursors. The excellent conformality of ALD thin films can be exploited for sealing defects in coatings made by other techniques. Here the corrosion protection properties of hard CrN and diamond-like carbon (DLC) coatings on low alloy steel were improved by ALD sealing with 50 nm thick layers consisting of Al2O3 and Ta2O5 nanolaminates or mixtures. In cross sectional images the ALD layers were found to follow the surface morphology of the CrN coatings uniformly. Furthermore, ALD growth into the pinholes of the CrN coating was verified. In electrochemical measurements the ALD sealing was found to decrease the current density of the CrN coated steel by over 2 orders of magnitude. The neutral salt spray (NSS) durability was also improved: on the best samples the appearance of corrosion spots was delayed from 2 to 168 h. On DLC coatings the adhesion of the ALD sealing layers was weaker, but still clear improvement in NSS durability was achieved indicating sealing of the pinholes. PMID:24428348

  3. Next-Generation Lithium Metal Anode Engineering via Atomic Layer Deposition.

    PubMed

    Kozen, Alexander C; Lin, Chuan-Fu; Pearse, Alexander J; Schroeder, Marshall A; Han, Xiaogang; Hu, Liangbing; Lee, Sang-Bok; Rubloff, Gary W; Noked, Malachi

    2015-06-23

    Lithium metal is considered to be the most promising anode for next-generation batteries due to its high energy density of 3840 mAh g(-1). However, the extreme reactivity of the Li surface can induce parasitic reactions with solvents, contamination, and shuttled active species in the electrolyte, reducing the performance of batteries employing Li metal anodes. One promising solution to this issue is application of thin chemical protection layers to the Li metal surface. Using a custom-made ultrahigh vacuum integrated deposition and characterization system, we demonstrate atomic layer deposition (ALD) of protection layers directly on Li metal with exquisite thickness control. We demonstrate as a proof-of-concept that a 14 nm thick ALD Al2O3 layer can protect the Li surface from corrosion due to atmosphere, sulfur, and electrolyte exposure. Using Li-S battery cells as a test system, we demonstrate an improved capacity retention using ALD-protected anodes over cells assembled with bare Li metal anodes for up to 100 cycles. PMID:25970127

  4. Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Krajewski, Tomasz A.; Luka, Grzegorz; Gieraltowska, Sylwia; Zakrzewski, Adam J.; Smertenko, Petro S.; Kruszewski, Piotr; Wachnicki, Lukasz; Witkowski, Bartlomiej S.; Lusakowska, Elzbieta; Jakiela, Rafal; Godlewski, Marek; Guziewicz, Elzbieta

    2011-06-01

    This paper reports on ZnO/Ag Schottky junctions obtained by the low temperature atomic layer deposition process. Introducing the thin (from 1.25 to 7.5 nm) layer of hafnium dioxide between the ZnO layer and evaporated Ag Schottky contact improves the rectification ratio to about 105 at 2V. For the ZnO/Ag junctions without the HfO2 interlayer, the rectification ratio is only 102. We assign this effect to the passivation of ZnO surface accumulation layer that is reported for ZnO thin films.

  5. Large area photodetector based on microwave cavity perturbation techniques

    SciTech Connect

    Braggio, C. Carugno, G.; Sirugudu, R. K.; Lombardi, A.; Ruoso, G.

    2014-07-28

    We present a preliminary study to develop a large area photodetector, based on a semiconductor crystal placed inside a superconducting resonant cavity. Laser pulses are detected through a variation of the cavity impedance, as a consequence of the conductivity change in the semiconductor. A novel method, whereby the designed photodetector is simulated by finite element analysis, makes it possible to perform pulse-height spectroscopy on the reflected microwave signals. We measure an energy sensitivity of 100 fJ in the average mode without the employment of low noise electronics and suggest possible ways to further reduce the single-shot detection threshold, based on the results of the described method.

  6. Large area nuclear particle detectors using ET materials

    NASA Technical Reports Server (NTRS)

    1987-01-01

    The purpose of this SBIR Phase 1 feasibility effort was to demonstrate the usefulness of Quantex electron-trapping (ET) materials for spatial detection of nuclear particles over large areas. This demonstration entailed evaluating the prompt visible scintillation as nuclear particles impinged on films of ET materials, and subsequently detecting the nuclear particle impingement information pattern stored in the ET material, by means of the visible-wavelength luminescence produced by near-infrared interrogation. Readily useful levels of scintillation and luminescence outputs are demonstrated.

  7. Position reconstruction in large-area scintillating fibre detectors

    NASA Astrophysics Data System (ADS)

    Mahata, K.; Johansson, H. T.; Paschalis, S.; Simon, H.; Aumann, T.

    2009-09-01

    A new analysis procedure has been developed for the large-area scintillating fibre detectors with position-sensitive photomultiplier (PSPM) readout used for heavy ions in the LAND set-up at GSI. It includes gain matching of the PSPM, calibration of the PSPM fibre mask and hit reconstruction. This procedure allows for a quasi-online calibration of this tracking device. It also allows for a precise determination of the position close to the intrinsic detector resolution of 1 mm pitch together with careful treatment of individual event accuracies.

  8. Application issues for large-area electrochromic windows incommercial buildings

    SciTech Connect

    Lee, Eleanor S.; DiBartolomeo, D.L.

    2000-05-01

    Projections of performance from small-area devices to large-area windows and enterprise marketing have created high expectations for electrochromic glazings. As a result, this paper seeks to precipitate an objective dialog between material scientists and building-application scientists to determine whether actual large-area electrochromic devices will result in significant performance benefits and what material improvements are needed, if any, to make electrochromics more practical for commercial building applications. Few in-situ tests have been conducted with large-area electrochromic windows applied in buildings. This study presents monitored results from a full-scale field test of large-area electrochromic windows to illustrate how this technology will perform in commercial buildings. The visible transmittance (Tv) of the installed electrochromic ranged from 0.11 to 0.38. The data are limited to the winter period for a south-east-facing window. The effect of actual device performance on lighting energy use, direct sun control, discomfort glare, and interior illumination is discussed. No mechanical system loads were monitored. These data demonstrate the use of electrochromics in a moderate climate and focus on the most restrictive visual task: computer use in offices. Through this small demonstration, we were able to determine that electrochromic windows can indeed provide unmitigated transparent views and a level of dynamic illumination control never before seen in architectural glazing materials. Daily lighting energy use was 6-24 percent less compared to the 11 percent-glazing, with improved interior brightness levels. Daily lighting energy use was 3 percent less to 13 percent more compared to the 38 percent-glazing, with improved window brightness control. The electrochromic window may not be able to fulfill both energy-efficiency and visual comfort objectives when low winter direct sun is present, particularly for computer tasks using cathode-ray tube (CRT

  9. Large area, dense silicon nanowire array chemical sensors

    SciTech Connect

    Talin, A. Alec; Hunter, Luke L.; Leonard, Francois; Rokad, Bhavin

    2006-10-09

    The authors present a simple top-down approach based on nanoimprint lithography to create dense arrays of silicon nanowires over large areas. Metallic contacts to the nanowires and a bottom gate allow the operation of the array as a field-effect transistor with very large on/off ratios. When exposed to ammonia gas or cyclohexane solutions containing nitrobenzene or phenol, the threshold voltage of the field-effect transistor is shifted, a signature of charge transfer between the analytes and the nanowires. The threshold voltage shift is proportional to the Hammett parameter and the concentration of the nitrobenzene and phenol analytes.

  10. Method of manufacturing a large-area segmented photovoltaic module

    DOEpatents

    Lenox, Carl

    2013-11-05

    One embodiment of the invention relates to a segmented photovoltaic (PV) module which is manufactured from laminate segments. The segmented PV module includes rectangular-shaped laminate segments formed from rectangular-shaped PV laminates and further includes non-rectangular-shaped laminate segments formed from rectangular-shaped and approximately-triangular-shaped PV laminates. The laminate segments are mechanically joined and electrically interconnected to form the segmented module. Another embodiment relates to a method of manufacturing a large-area segmented photovoltaic module from laminate segments of various shapes. Other embodiments relate to processes for providing a photovoltaic array for installation at a site. Other embodiments and features are also disclosed.

  11. Large Area Crop Inventory Experiment (LACIE). Executive summary

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The author has identified the following significant results. The Large Area Crop Inventory Experiment (LACIE), completed June 30, 1978, has met the USDA at-harvest goals (90% accuracy with a 90% confidence level) in the US Great Plains and U.S.S.R. for two consecutive years. In addition, in the U.S.S.R., LACIE indicated a shortfall in the '76-'77 wheat crop about two months prior to harvest, thus demonstrating the capability of LACIE to make accurate preharvest estimates.

  12. High-Throughput Dry Processes for Large-Area Devices

    SciTech Connect

    BUSS,RICHARD J.; HEBNER,GREGORY A.; RUBY,DOUGLAS S.; YANG,PIN

    1999-11-01

    In October 1996, an interdisciplinary team began a three-year LDRD project to study the plasma processes of reactive ion etching and plasma-enhanced chemical vapor deposition on large-area silicon devices. The goal was to develop numerical models that could be used in a variety of applications for surface cleaning, selective etching, and thin-film deposition. Silicon solar cells were chosen as the experimental vehicle for this project because an innovative device design was identified that would benefit from immediate performance improvement using a combination of plasma etching and deposition processes. This report presents a summary of the technical accomplishments and conclusions of the team.

  13. LACIE large area acreage estimation. [United States of America

    NASA Technical Reports Server (NTRS)

    Chhikara, R. S.; Feiveson, A. H. (Principal Investigator)

    1979-01-01

    A sample wheat acreage for a large area is obtained by multiplying its small grains acreage estimate as computed by the classification and mensuration subsystem by the best available ratio of wheat to small grains acreages obtained from historical data. In the United States, as in other countries with detailed historical data, an additional level of aggregation was required because sample allocation was made at the substratum level. The essential features of the estimation procedure for LACIE countries are included along with procedures for estimating wheat acreage in the United States.

  14. Fermi Large Area Telescope Bright Gamma-ray Source List

    SciTech Connect

    Abdo, Aous A.; Ackermann, M.; Ajello, M.; Atwood, W.B.; Axelsson, M.; Baldini, L.; Ballet, J.; Band, D.L.; Barbiellini, Guido; Bastieri, Denis; Bechtol, K.; Bellazzini, R.; Berenji, B.; Bignami, G.F.; Bloom, Elliott D.; Bonamente, E.; Borgland, A.W.; Bregeon, J.; Brigida, M.; Bruel, P.; Burnett, Thompson H.; /more authors..

    2009-05-15

    Following its launch in 2008 June, the Fermi Gamma-ray Space Telescope (Fermi) began a sky survey in August. The Large Area Telescope (LAT) on Fermi in three months produced a deeper and better resolved map of the {gamma}-ray sky than any previous space mission. We present here initial results for energies above 100 MeV for the 205 most significant (statistical significance greater than {approx}10{sigma}) {gamma}-ray sources in these data. These are the best characterized and best localized point-like (i.e., spatially unresolved) {gamma}-ray sources in the early mission data.

  15. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOEpatents

    Sze, Robert C.; Quigley, Gerard P.

    1996-01-01

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source. A contamination-free VUV light source having a 225 cm.sup.2 emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm.sup.2 at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing.

  16. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOEpatents

    Sze, R.C.; Quigley, G.P.

    1996-12-17

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source is disclosed. A contamination-free VUV light source having a 225 cm{sup 2} emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm{sup 2} at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing. 3 figs.

  17. Laser interference lithography for large area patterning and the fabrication of functional nanostructures

    NASA Astrophysics Data System (ADS)

    Wathuthanthri, Ishan

    Nature-inspired phenomena such as the "moth eye" and "lotus leaf" effects have gained a lot of interest in recent years due to potential applications in a wide range of scientific and engineering disciplines. To practically achieve a majority of these biomimetic applications it is necessary to fabricate such nano-featured surfaces in a low-cost and high-throughput manner. To this end, this dissertation focuses on developing and using the Interference Lithography (IL) technologies to achieve large-area nanopatterning. IL is a parallel-type nanolithography technique that shares many of the advantages of other parallel-type techniques such as deep-UV photolithography while alleviating a majority of concerns such as cost and complexity. IL relies on the interference of two or more beams of light where the resulting interference fringes are generally recorded on a light sensitive polymeric material such as photoresist. In simple two-beam IL systems, the periodicity of the interference fringes is simply a function of wavelength and the angle of separation of the two beams, while the maximum coverage area is a constrained by the optical path and the exposed area. To this extent, in the design of interferometers for nanopatterning, the challenge remains in designing systems where a simple mechanism exists for varying the angle of separation of the interfering beams and in turn periodicity of the interference fringes while also enabling large-area exposures. To this end, the first half of this dissertation demonstrates three different IL systems (Lloyd-mirror, two-degree-of freedom Lloyd-mirror, and the tunable two-mirror systems) designed and established at Stevens capable of fast tuning of periodicities while also achieving wafer-scale (4") large-area nanopatterning. Using the large-area nanopatterns of photoresist, various pattern transfer techniques have also been investigated where the photoresist film is used as a template layer to transfer the large-area periodic

  18. Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

    SciTech Connect

    Napari, Mari Malm, Jari; Lehto, Roope; Julin, Jaakko; Arstila, Kai; Sajavaara, Timo; Lahtinen, Manu

    2015-01-15

    ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al{sub 2}O{sub 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.

  19. ATOMIC LAYER DEPOSITION OF TITANIUM OXIDE THIN FILMS ONNANOPOROUS ALUMINA TEMPLATES FOR MEDICAL APPLICATIONS

    SciTech Connect

    Brigmon, R.

    2009-05-05

    Nanostructured materials may play a significant role in controlled release of pharmacologic agents for treatment of cancer. Many nanoporous polymer materials are inadequate for use in drug delivery. Nanoporous alumina provides several advantages over other materials for use in controlled drug delivery and other medical applications. Atomic layer deposition was used to coat all the surfaces of the nanoporous alumina membrane in order to reduce the pore size in a controlled manner. Both the 20 nm and 100 nm titanium oxide-coated nanoporous alumina membranes did not exhibit statistically lower viability compared to the uncoated nanoporous alumina membrane control materials. In addition, 20 nm pore size titanium oxide-coated nanoporous alumina membranes exposed to ultraviolet light demonstrated activity against Escherichia coli and Staphylococcus aureus bacteria. Nanostructured materials prepared using atomic layer deposition may be useful for delivering a pharmacologic agent at a precise rate to a specific location in the body. These materials may serve as the basis for 'smart' drug delivery devices, orthopedic implants, or self-sterilizing medical devices.

  20. Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment

    SciTech Connect

    Steven Brandt, E.; Grace, Jeremy M.

    2012-01-15

    The role of surface hydroxyl content in atomic layer deposition (ALD) of aluminum oxide (AO) on polymers is demonstrated by performing an atomic layer deposition of AO onto a variety of polymer types, before and after pretreatment in a plasma struck in water vapor. The treatment and deposition reactions are performed in situ in a high vacuum chamber that is interfaced to an x-ray photoelectron spectrometer to prevent adventitious exposure to atmospheric contaminants. X-ray photoelectron spectroscopy is used to follow the surface chemistries of the polymers, including theformation of surface hydroxyls and subsequent growth of AO by ALD. Using dimethyl aluminum isopropoxide and water as reactants, ALD is obtained for water-plasma-treated poly(styrene) (PS), poly(propylene) (PP), poly(vinyl alcohol) (PVA), and poly(ethylene naphthalate) (PEN). For PS, PP, and PEN, initial growth rates of AO on the native (untreated) polymers are at least an order of magnitude lower than on the same polymer surface following the plasma treatment. By contrast, native PVA is shown to initiate ALD of AO as a result of the presence of intrinsic surface hydroxyls that are derived from the repeat unit of this polymer.

  1. Metallic single-unit-cell orthorhombic cobalt diselenide atomic layers: robust water-electrolysis catalysts.

    PubMed

    Liang, Liang; Cheng, Hao; Lei, Fengcai; Han, Jun; Gao, Shan; Wang, Chengming; Sun, Yongfu; Qamar, Shaista; Wei, Shiqiang; Xie, Yi

    2015-10-01

    The bottleneck in water electrolysis lies in the kinetically sluggish oxygen evolution reaction (OER). Herein, conceptually new metallic non-metal atomic layers are proposed to overcome this drawback. Metallic single-unit-cell CoSe2 sheets with an orthorhombic phase are synthesized by thermally exfoliating a lamellar CoSe2 -DETA hybrid. The metallic character of orthorhombic CoSe2 atomic layers, verified by DFT calculations and temperature-dependent resistivities, allows fast oxygen evolution kinetics with a lowered overpotential of 0.27 V. The single-unit-cell thickness means 66.7 % of the Co(2+) ions are exposed on the surface and serve as the catalytically active sites. The lowered Co(2+) coordination number down to 1.3 and 2.6, gives a lower Tafel slope of 64 mV dec(-1) and higher turnover frequency of 745 h(-1) . Thus, the single-unit-cell CoSe2 sheets have around 2 and 4.5 times higher catalytic activity compared with the lamellar CoSe2 -DETA hybrid and bulk CoSe2 . PMID:26235276

  2. Controlled Synthesis of Pd/Pt Core Shell Nanoparticles Using Area-selective Atomic Layer Deposition

    PubMed Central

    Cao, Kun; Zhu, Qianqian; Shan, Bin; Chen, Rong

    2015-01-01

    We report an atomic scale controllable synthesis of Pd/Pt core shell nanoparticles (NPs) via area-selective atomic layer deposition (ALD) on a modified surface. The method involves utilizing octadecyltrichlorosilane (ODTS) self-assembled monolayers (SAMs) to modify the surface. Take the usage of pinholes on SAMs as active sites for the initial core nucleation, and subsequent selective deposition of the second metal as the shell layer. Since new nucleation sites can be effectively blocked by surface ODTS SAMs in the second deposition stage, we demonstrate the successful growth of Pd/Pt and Pt/Pd NPs with uniform core shell structures and narrow size distribution. The size, shell thickness and composition of the NPs can be controlled precisely by varying the ALD cycles. Such core shell structures can be realized by using regular ALD recipes without special adjustment. This SAMs assisted area-selective ALD method of core shell structure fabrication greatly expands the applicability of ALD in fabricating novel structures and can be readily applied to the growth of NPs with other compositions. PMID:25683469

  3. Fabrication and design of metal nano-accordion structures using atomic layer deposition and interference lithography

    NASA Astrophysics Data System (ADS)

    Min, J.-H.; Bagal, A.; Mundy, J. Z.; Oldham, C. J.; Wu, B.-I.; Parsons, G. N.; Chang, C.-H.

    2016-02-01

    Metal nanostructures have attractive electrical and thermal properties as well as structural stability, and are important for applications in flexible conductors. In this study, we have developed a method to fabricate and control novel complex platinum nanostructures with accordion-like profile using atomic layer deposition on lithographically patterned polymer templates. The template removal process results in unique structural transformation of the nanostructure profile, which has been studied and modeled. Using different template duty cycles and aspect ratios, we have demonstrated a wide variety of cross-sectional profiles from wavy geometry to pipe array patterns. These complex thin metal nanostructures can find applications in flexible/stretchable electronics, photonics and nanofluidics.Metal nanostructures have attractive electrical and thermal properties as well as structural stability, and are important for applications in flexible conductors. In this study, we have developed a method to fabricate and control novel complex platinum nanostructures with accordion-like profile using atomic layer deposition on lithographically patterned polymer templates. The template removal process results in unique structural transformation of the nanostructure profile, which has been studied and modeled. Using different template duty cycles and aspect ratios, we have demonstrated a wide variety of cross-sectional profiles from wavy geometry to pipe array patterns. These complex thin metal nanostructures can find applications in flexible/stretchable electronics, photonics and nanofluidics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08566g

  4. Charge-transfer-based Gas Sensing Using Atomic-layer MoS2

    PubMed Central

    Cho, Byungjin; Hahm, Myung Gwan; Choi, Minseok; Yoon, Jongwon; Kim, Ah Ra; Lee, Young-Joo; Park, Sung-Gyu; Kwon, Jung-Dae; Kim, Chang Su; Song, Myungkwan; Jeong, Yongsoo; Nam, Kee-Seok; Lee, Sangchul; Yoo, Tae Jin; Kang, Chang Goo; Lee, Byoung Hun; Ko, Heung Cho; Ajayan, Pulickel M.; Kim, Dong-Ho

    2015-01-01

    Two-dimensional (2D) molybdenum disulphide (MoS2) atomic layers have a strong potential to be used as 2D electronic sensor components. However, intrinsic synthesis challenges have made this task difficult. In addition, the detection mechanisms for gas molecules are not fully understood. Here, we report a high-performance gas sensor constructed using atomic-layered MoS2 synthesised by chemical vapour deposition (CVD). A highly sensitive and selective gas sensor based on the CVD-synthesised MoS2 was developed. In situ photoluminescence characterisation revealed the charge transfer mechanism between the gas molecules and MoS2, which was validated by theoretical calculations. First-principles density functional theory calculations indicated that NO2 and NH3 molecules have negative adsorption energies (i.e., the adsorption processes are exothermic). Thus, NO2 and NH3 molecules are likely to adsorb onto the surface of the MoS2. The in situ PL characterisation of the changes in the peaks corresponding to charged trions and neutral excitons via gas adsorption processes was used to elucidate the mechanisms of charge transfer between the MoS2 and the gas molecules. PMID:25623472

  5. Self limiting atomic layer deposition of Al2O3 on perovskite surfaces: a reality?

    NASA Astrophysics Data System (ADS)

    Choudhury, Devika; Rajaraman, Gopalan; Sarkar, Shaibal K.

    2016-03-01

    The feasibility of self-saturated atomic layer deposition of Al2O3 on an organolead halide perovskite (MAPbI3-xClx) surface through a well known trimethylaluminium (TMA)-water (H2O) chemistry is studied. Though the sequential dosages of reactants form films on the perovskite surfaces, a self saturated growth is never observed. Self-saturation leads to the degradation of the material. Both experimental and density functional theory calculations are carried out for complete understanding of the growth mechanism of self-limiting Al2O3 on the perovskite surface.The feasibility of self-saturated atomic layer deposition of Al2O3 on an organolead halide perovskite (MAPbI3-xClx) surface through a well known trimethylaluminium (TMA)-water (H2O) chemistry is studied. Though the sequential dosages of reactants form films on the perovskite surfaces, a self saturated growth is never observed. Self-saturation leads to the degradation of the material. Both experimental and density functional theory calculations are carried out for complete understanding of the growth mechanism of self-limiting Al2O3 on the perovskite surface. Electronic supplementary information (ESI) available: Additional QCM results, FTIR spectra and DFT results. See DOI: 10.1039/c5nr06974b

  6. Chemical Stability of Titania and Alumina Thin Films Formed by Atomic Layer Deposition.

    PubMed

    Correa, Gabriela C; Bao, Bo; Strandwitz, Nicholas C

    2015-07-15

    Thin films formed by atomic layer deposition (ALD) are being examined for a variety of chemical protection and diffusion barrier applications, yet their stability in various fluid environments is not well characterized. The chemical stability of titania and alumina thin films in air, 18 MΩ water, 1 M KCl, 1 M HNO3, 1 M H2SO4, 1 M HCl, 1 M KOH, and mercury was studied. Films were deposited at 150 °C using trimethylaluminum-H2O and tetrakis(dimethylamido)titanium-H2O chemistries for alumina and titania, respectively. A subset of samples were heated to 450 and 900 °C in inert atmosphere. Films were examined using spectroscopic ellipsometry, atomic force microscopy, optical microscopy, scanning electron microscopy, and X-ray diffraction. Notably, alumina samples were found to be unstable in pure water, acid, and basic environments in the as-synthesized state and after 450 °C thermal treatment. In pure water, a dissolution-precipitation mechanism is hypothesized to cause surface roughening. The stability of alumina films was greatly enhanced after annealing at 900 °C in acidic and basic solutions. Titania films were found to be stable in acid after annealing at or above 450 °C. All films showed a composition-independent increase in measured thickness when immersed in mercury. These results provide stability-processing relationships that are important for controlled etching and protective barrier layers. PMID:26107803

  7. Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films.

    PubMed

    Mirvakili, Mehr Negar; Van Bui, Hao; van Ommen, J Ruud; Hatzikiriakos, Savvas G; Englezos, Peter

    2016-06-01

    Surface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties. Thus, a hydrophobic paper is created with low gas permeability by combining the control of fiber size (and structure) with atomic layer deposition of Al2O3 films. Papers are prepared using Kraft softwood pulp and thermomechanical pulp. The cellulosic wood fibers are refined to obtain fibers with smaller length and diameter. Films of Al2O3, 10, 25, and 45 nm in thickness, are deposited on the paper surface. The work demonstrates that coating of papers prepared with long fibers efficiently reduces wettability with slight enhancement in gas permeability, whereas on shorter fibers, it results in significantly lower gas permeability. Wettability studies on Al2O3 deposited paper substrates have shown water wicking and absorption over time only in papers prepared with highly refined fibers. It is also shown that there is a certain fiber size at which the gas permeability assumes its minimum value, and further decrease in fiber size will reverse the effect on gas permeability. PMID:27165172

  8. Charge-transfer-based Gas Sensing Using Atomic-layer MoS2

    NASA Astrophysics Data System (ADS)

    Cho, Byungjin; Hahm, Myung Gwan; Choi, Minseok; Yoon, Jongwon; Kim, Ah Ra; Lee, Young-Joo; Park, Sung-Gyu; Kwon, Jung-Dae; Kim, Chang Su; Song, Myungkwan; Jeong, Yongsoo; Nam, Kee-Seok; Lee, Sangchul; Yoo, Tae Jin; Kang, Chang Goo; Lee, Byoung Hun; Ko, Heung Cho; Ajayan, Pulickel M.; Kim, Dong-Ho

    2015-01-01

    Two-dimensional (2D) molybdenum disulphide (MoS2) atomic layers have a strong potential to be used as 2D electronic sensor components. However, intrinsic synthesis challenges have made this task difficult. In addition, the detection mechanisms for gas molecules are not fully understood. Here, we report a high-performance gas sensor constructed using atomic-layered MoS2 synthesised by chemical vapour deposition (CVD). A highly sensitive and selective gas sensor based on the CVD-synthesised MoS2 was developed. In situ photoluminescence characterisation revealed the charge transfer mechanism between the gas molecules and MoS2, which was validated by theoretical calculations. First-principles density functional theory calculations indicated that NO2 and NH3 molecules have negative adsorption energies (i.e., the adsorption processes are exothermic). Thus, NO2 and NH3 molecules are likely to adsorb onto the surface of the MoS2. The in situ PL characterisation of the changes in the peaks corresponding to charged trions and neutral excitons via gas adsorption processes was used to elucidate the mechanisms of charge transfer between the MoS2 and the gas molecules.

  9. Large-scale synthesis of WSe2 atomic layers on SiO2/Si

    NASA Astrophysics Data System (ADS)

    Cao, Hui-Wen; Zhao, Hai-Ming; Xin, Xin; Shao, Peng-Zhi; Qi, Han-Yu; Jian, Mu-Qiang; Zhang, Ying-Ying; Yang, Yi; Ren, Tian-Ling

    2016-06-01

    We report a systematic study of large-scale growth of high-quality WSe2 atomic layers directly on SiO2/Si substrates using a convenient method. Various parameters, especially growth temperatures, flow rate of carrier gas and tube pressure, are investigated in affecting the properties of as-grown WSe2 flakes in terms of their sizes, shapes and thickness. The pre-annealing step is demonstrated to be a key role in achieving the large-scale growth. Under an optimized condition, the lateral size of triangular single-crystal monolayer WSe2 is up to 30 μm and the area of the monolayer thin film can be up to 0.25 mm2. And some other interesting features, such as nanoflowers, are observed, which are a promising for catalyzing research. Raman spectrum and microphotoluminescence indicate distinct layer dependent efficiency. Auger electron spectroscopy (AES) studies demonstrate the atomic concentration of the as-grown WSe2. Electrical transport further shows that the p-type WSe2 field-effect transistors exhibit excellent electrical properties with carrier mobility of ˜64 cm2ṡV‑1ṡs‑1 and current on/off ratio over 105. These results are comparable to the exfoliated materials.

  10. Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

    NASA Astrophysics Data System (ADS)

    Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

    2016-05-01

    This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (<3% Al/(Al + Hf)) incorporation in the Hf based high-k dielectrics. The defect activation energy estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

  11. Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction

    PubMed Central

    Kobayashi, Yu; Yoshida, Shoji; Sakurada, Ryuji; Takashima, Kengo; Yamamoto, Takahiro; Saito, Tetsuki; Konabe, Satoru; Taniguchi, Takashi; Watanabe, Kenji; Maniwa, Yutaka; Takeuchi, Osamu; Shigekawa, Hidemi; Miyata, Yasumitsu

    2016-01-01

    Semiconductor heterojunction interfaces have been an important topic, both in modern solid state physics and in electronics and optoelectronics applications. Recently, the heterojunctions of atomically-thin transition metal dichalcogenides (TMDCs) are expected to realize one-dimensional (1D) electronic systems at their heterointerfaces due to their tunable electronic properties. Herein, we report unique conductivity enhancement and electrical potential modulation of heterojunction interfaces based on TMDC bilayers consisted of MoS2 and WS2. Scanning tunneling microscopy/spectroscopy analyses showed the formation of 1D confining potential (potential barrier) in the valence (conduction) band, as well as bandgap narrowing around the heterointerface. The modulation of electronic properties were also probed as the increase of current in conducting atomic force microscopy. Notably, the observed band bending can be explained by the presence of 1D fixed charges around the heterointerface. The present findings indicate that the atomic layer heterojunctions provide a novel approach to realizing tunable 1D electrical potential for embedded quantum wires and ultrashort barriers of electrical transport. PMID:27515115

  12. Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction.

    PubMed

    Kobayashi, Yu; Yoshida, Shoji; Sakurada, Ryuji; Takashima, Kengo; Yamamoto, Takahiro; Saito, Tetsuki; Konabe, Satoru; Taniguchi, Takashi; Watanabe, Kenji; Maniwa, Yutaka; Takeuchi, Osamu; Shigekawa, Hidemi; Miyata, Yasumitsu

    2016-01-01

    Semiconductor heterojunction interfaces have been an important topic, both in modern solid state physics and in electronics and optoelectronics applications. Recently, the heterojunctions of atomically-thin transition metal dichalcogenides (TMDCs) are expected to realize one-dimensional (1D) electronic systems at their heterointerfaces due to their tunable electronic properties. Herein, we report unique conductivity enhancement and electrical potential modulation of heterojunction interfaces based on TMDC bilayers consisted of MoS2 and WS2. Scanning tunneling microscopy/spectroscopy analyses showed the formation of 1D confining potential (potential barrier) in the valence (conduction) band, as well as bandgap narrowing around the heterointerface. The modulation of electronic properties were also probed as the increase of current in conducting atomic force microscopy. Notably, the observed band bending can be explained by the presence of 1D fixed charges around the heterointerface. The present findings indicate that the atomic layer heterojunctions provide a novel approach to realizing tunable 1D electrical potential for embedded quantum wires and ultrashort barriers of electrical transport. PMID:27515115

  13. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ∼100 nm thickness with various Aldoping were prepared at 150 °C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7 cm{sup 2} /V s . Film resistivity reached a minima of 4.4×10{sup −3}  Ω cm whereas the carrier concentration reached a maxima of 1.7×10{sup 20}  cm{sup −3} , at 3 at. % Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at. % Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at. % is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  14. Phase separation and atomic ordering in indium gallium nitride epitaxial layers

    NASA Astrophysics Data System (ADS)

    Rao, Manu

    Phase separation and atomic ordering were investigated in InGaN layers grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. Transmission electron microscopy (TEM) of InGaN layers during their early stages of growth reveal 2-D quantum rings that form spontaneously. In thick layers at InN contents of 3%, planview TEM images show a random distribution of atomic species and selected area diffraction (SAD) patterns do not exhibit satellite spots continuous to Bragg reflections. InN contents of 12% result in a speckled microstructure and satellites are present in SAD patterns. No satellites are observed along the [0001] direction, implying that phase separation is two-dimensional in nature and may occur on the surface while the layer is growing. These results are indicative of composition modulations lying in the (0001) growth plane. Samples containing InN fractions of between 22 and 34% exhibit microstructures having stronger contrast variations and SAD patterns with satellites further spaced from fundamental reflections. In cross-sectional TEM images, contrast striations oriented along [0001] are present except near the InGaN/GaN interface. The spacing of these striations is comparable to the composition modulation wavelengths calculated from SADPs and decreases with increasing InN content. Similarly, plan view TEM images taken from very thin specimens exhibit a domain structure with well aligned stripes within the domains. Increasing the growth rate from 400nm/h to 900nm/h results in a reduction in the intensity of satellite spots, indicating that the amplitude of composition modulations is reduced. The absence of contrast near the InGaN/GaN interface suggest reduced In incorporation, resulting in the absence of phase separation. Reduced In incorporation is confirmed by high angle angular dark field (HAADF) imaging and energy dispersive x-ray spectroscopy (EDS). X-ray diffraction and photoluminescence data are consistent with the occurrence

  15. Nanomechanical properties of platinum thin films synthesized by atomic layer deposition

    SciTech Connect

    Mamun, M.A.; Gu, D.; Baumgart, H.; Elmustafa, A.A.

    2015-03-01

    The nanomechanical properties of Pt thin films grown on Si (100) using atomic layer deposition (ALD) were investigated using nanoindentation. Recently, atomic layer deposition (ALD) has successfully demonstrated the capability to deposit ultra-thin films of platinum (Pt). Using (methylcyclopentadienyl) trimethylplatinum (MeCpPtMe3) as chemical platinum precursor and oxygen (O2) as the oxidizing agent, the ALD synthesis of Pt can be achieved with high conformity and excellent film uniformity. The ALD process window for Pt films was experimentally established in the temperature range between 270 °C and 320 °C, where the sheet conductance was constant over that temperature range, indicating stable ALD Pt film growth rate. ALD growth of Pt films exhibits very poor nucleation and adhesion characteristics on bare Si surfaces when the native oxide was removed by 2% HF etch. Pt adhesion improves for thermally oxidized Si wafers and for Si wafers covered with native oxide. Three ALD Pt films deposited at 800, 900, and 1000 ALD deposition cycles were tested for the structural and mechanical properties. Additionally, the sample with 900 ALD deposition cycles was further annealed in forming gas (95% N2 and 5% H2) at 450 °C for 30 min in order to passivate dangling bonds in the grain boundaries of the polycrystalline Pt film. Cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscope (SEM) were employed to characterize the films' surface structure and morphology. Nanoindentation technique was used to evaluate the hardness and modulus of the ALD Pt films of various film thicknesses. The results indicate that the films depict comparable hardness and modulus results; however, the 800 and 1000 ALD deposition cycles films without forming gas annealing experienced significant amount of pileup, whereas the 900 ALD deposition cycles sample annealed in forming gas resulted in a smaller pileup.

  16. Scaling Up Nature: Large Area Flexible Biomimetic Surfaces.

    PubMed

    Li, Yinyong; John, Jacob; Kolewe, Kristopher W; Schiffman, Jessica D; Carter, Kenneth R

    2015-10-28

    The fabrication and advanced function of large area biomimetic superhydrophobic surfaces (SHS) and slippery lubricant-infused porous surfaces (SLIPS) are reported. The use of roll-to-roll nanoimprinting techniques enabled the continuous fabrication of SHS and SLIPS based on hierarchically wrinkled surfaces. Perfluoropolyether hybrid molds were used as flexible molds for roll-to-roll imprinting into a newly designed thiol-ene based photopolymer resin coated on flexible polyethylene terephthalate films. The patterned surfaces exhibit feasible superhydrophobicity with a water contact angle around 160° without any further surface modification. The SHS can be easily converted into SLIPS by roll-to-roll coating of a fluorinated lubricant, and these surfaces have outstanding repellence to a variety of liquids. Furthermore, both SHS and SLIPS display antibiofouling properties when challenged with Escherichia coli K12 MG1655. The current article describes the transformation of artificial biomimetic structures from small, lab-scale coupons to low-cost, large area platforms. PMID:26423494

  17. Characterization and Calibration of Large Area Resistive Strip Micromegas Detectors

    NASA Astrophysics Data System (ADS)

    Lösel, Philipp; ATLAS Muon Collaboration

    2016-07-01

    Resistive strip Micromegas detectors have been tested extensively as small detectors of about 10×10 cm2 in size and they work reliably at high rates of 100 kHz/cm2 and above. Tracking resolution well below 100 μm has been observed for 100 GeV muons and pions. Micromegas detectors are meanwhile proposed as large area muon precision trackers of 2-3 m2 in size. To investigate possible differences between small and large detectors, a 1 m2 detector with 2048 resistive strips at a pitch of 450 μm was studied in the LMU Cosmic Ray Measurement Facility (CRMF) using two 4×2.2 m2 large Monitored Drift Tube (MDT) chambers for cosmic muon reference tracking. A segmentation of the resistive strip anode plane in 57.6 mm×93 mm large areas has been realized by the readout of 128 strips with one APV25 chip each and by eleven 93 mm broad trigger scintillators placed along the readout strips. This allows for mapping of homogeneity in pulse height and efficiency, determination of signal propagation along the 1 m long anode strips and calibration of the position of the anode strips.

  18. Simulations of Large-Area Electron Beam Diodes

    NASA Astrophysics Data System (ADS)

    Swanekamp, S. B.; Friedman, M.; Ludeking, L.; Smithe, D.; Obenschain, S. P.

    1999-11-01

    Large area electron beam diodes are typically used to pump the amplifiers of KrF lasers. Simulations of large-area electron beam diodes using the particle-in-cell code MAGIC3D have shown the electron flow in the diode to be unstable. Since this instability can potentially produce a non-uniform current and energy distribution in the hibachi structure and lasing medium it can be detrimental to laser efficiency. These results are similar to simulations performed using the ISIS code.(M.E. Jones and V.A. Thomas, Proceedings of the 8^th) International Conference on High-Power Particle Beams, 665 (1990). We have identified the instability as the so called ``transit-time" instability(C.K. Birdsall and W.B. Bridges, Electrodynamics of Diode Regions), (Academic Press, New York, 1966).^,(T.M. Antonsen, W.H. Miner, E. Ott, and A.T. Drobot, Phys. Fluids 27), 1257 (1984). and have investigated the role of the applied magnetic field and diode geometry. Experiments are underway to characterize the instability on the Nike KrF laser system and will be compared to simulation. Also some possible ways to mitigate the instability will be presented.

  19. Large areas elemental mapping by ion beam analysis techniques

    NASA Astrophysics Data System (ADS)

    Silva, T. F.; Rodrigues, C. L.; Curado, J. F.; Allegro, P.; Moro, M. V.; Campos, P. H. O. V.; Santos, S. B.; Kajiya, E. A. M.; Rizzutto, M. A.; Added, N.; Tabacniks, M. H.

    2015-07-01

    The external beam line of the Laboratory for Material Analysis with Ion Beams (LAMFI) is a versatile setup for multi-technique analysis. X-ray detectors for Particle Induced X-rays Emission (PIXE) measurements, a Gamma-ray detector for Particle Induced Gamma- ray Emission (PIGE), and a particle detector for scattering analysis, such as Rutherford Backscattering Spectrometry (RBS), were already installed. In this work, we present some results, using a large (60-cm range) XYZ computer controlled sample positioning system, completely developed and build in our laboratory. The XYZ stage was installed at the external beam line and its high spacial resolution (better than 5 μm over the full range) enables positioning the sample with high accuracy and high reproducibility. The combination of a sub-millimeter beam with the large range XYZ robotic stage is being used to produce elemental maps of large areas in samples like paintings, ceramics, stones, fossils, and all sort of samples. Due to its particular characteristics, this is a unique device in the sense of multi-technique analysis of large areas. With the continuous development of the external beam line at LAMFI, coupled to the robotic XYZ stage, it is becoming a robust and reliable option for regular analysis of trace elements (Z > 5) competing with the traditional in-vacuum ion-beam-analysis with the advantage of automatic rastering.

  20. Development of LAMBDA: Large Area Medipix-Based Detector Array

    NASA Astrophysics Data System (ADS)

    Pennicard, David; Lange, Sabine; Smoljanin, Sergej; Becker, Julian; Hirsemann, Helmut; Epple, Michael; Graafsma, Heinz

    2011-11-01

    The Medipix3 photon counting readout chip has a range of features — small pixel size, high readout rate and inter-pixel communication — which make it attractive for X-ray scattering and imaging at synchrotrons. DESY have produced a prototype large-area detector module that can carry a 6 by 2 array of Medipix3 chips (1536 by 512 pixels), which can be used with a single large silicon sensor (85mm by 28mm) or two ``hexa'' high-Z sensors. The detector head is designed to be tilable and compatible with low temperatures, and will allow high speed parallel readout of the Medipix3 chips. It consists of a ceramic board, on which the sensor assembly is mounted, and a secondary board for signal routing and voltage regulators. A prototype DAQ board using USB2 readout has also been produced. A ``quad'' Medipix3 sensor assembly has been mounted on the detector head, and successfully configured and read out by the DAQ board. Development has begun on a high-speed readout board, and large-area silicon assemblies are in production.

  1. Large-Area Zone Plate Fabrication with Optical Lithography

    SciTech Connect

    Denbeaux, G.

    2011-09-09

    Zone plates as condenser optics for x-ray microscopes offer simple optical designs for both illumination and spectral resolution when used as a linear monochromator. However, due to the long write times for electron beam lithography, both the availability and the size of zone plates for condensers have been limited. Since the resolution provided by the linear monochromator scales almost linearly with the diameter of the zone plate, the full potential for zone plate monochromators as illumination systems for x-ray microscopes has not been achieved. For example, the 10-mm-diameter zone plate has demonstrated a spectral resolution of E/{Delta}E = 700[1], but with a 26-mm-diameter zone plate, the calculated spectral resolution is higher than E/{Delta}E = 3000. These large-area zone plates are possible to fabricate with the leading edge semiconductor lithography tools such as those available at the College of Nanoscale Science and Engineering at the University at Albany. One of the lithography tools available is the ASML TWINSCAN XT: 1950i with 37-nm resolution [2]. A single 300-mm wafer can contain more than 60 fields, each with a large area condenser, and the throughput of the tool can be more than one wafer every minute.

  2. The GLAST Large Area Telescope Detector Performance Monitoring

    SciTech Connect

    Borgland, A.W.; Charles, E.; /SLAC

    2007-10-16

    The Large Area Telescope (LAT) is one of two instruments on board the Gamma-ray Large Area Telescope (GLAST), the next generation high energy gamma-ray space telescope. The LAT contains sixteen identical towers in a four-by-four grid. Each tower contains a silicon-strip tracker and a CsI calorimeter that together will give the incident direction and energy of the pair-converting photon in the energy range 20 MeV - 300 GeV. In addition, the instrument is covered by a finely segmented Anti-Coincidence Detector (ACD) to reject charged particle background. Altogether, the LAT contains more than 864k channels in the trackers, 1536 CsI crystals and 97 ACD plastic scintillator tiles and ribbons. Here we detail some of the strategies and methods for how we are planning to monitor the instrument performance on orbit. It builds on the extensive experience gained from Integration & Test and Commissioning of the instrument on ground.

  3. Prospects for Pulsar Studies with the GLAST Large Area Telescope

    NASA Technical Reports Server (NTRS)

    Harding, Alice K.

    2007-01-01

    The Large Area Telescope (LAT) on the Gamma-ray Large Area Space Telescope (GLAST), due to launch in November 2007, will have unprecedented sensitivity and energy resolution for gamma-rays in the range of 30 MeV to 200 GeV. GLAST is therefore expected to provide major advances in the understanding of high-energy emission from rotation-powered pulsars. As the only presently known galactic GeV source class; pulsars will be one of the most important sources for study with GLAST. The main science goals of the LAT for pulsar studies include an increase in the number of detected radio-loud and radio-quiet gamma-ray pulsars, including millisecond pulsars, giving much better statistics for elucidating population characteristics, measurement of the high-energy spectrum and the shape of spectral cutoffs and determining pulse profiles for a variety of pulsars of different age. Further, measurement of phase-resolved spectra and energy dependent pulse profiles of the brighter pulsars should allow detailed tests of magnetospheric particle acceleration and radiation mechanisms, by comparing data with theoretical models that have been developed. Additionally, the LAT will have the sensitivity to allow blind pulsation searches of nearly all unidentified EGRET sources, to possibly uncover more radio-quiet Geminga-like pulsars.

  4. Prospects for Pulsar Studies with the GLAST Large Area Telescope

    NASA Technical Reports Server (NTRS)

    Harding, Alice K.

    2007-01-01

    The Large Area Telescope (LAT) on the Gamma-ray Large Area Space Telescope (GLAST), due to launch in November 2007, will have unprecedented sensitivity and energy resolution for gamma-rays in the range of 30 MeV to 200 GeV. GLAST is therefore expected to provide major advances in the understanding of high-energy emission from rotation-powered p ulsars. As the only presently known galactic GeV source class, pulsar s will be one of the most important sources for study with GLAST. The main science goals of the LAT for pulsar studies include an increase in the number of detected radio-loud and radio-quiet gamma-ray pulsar s, including millisecond pulsars, giving much better statistics for e lucidating population characteristics, measurement of the high-energy spectrum and the shape of spectral cutoffs and determining pulse profiles for a variety of pulsars of different age. Further, measurement of phase-resolved spectra and energy dependent pulse profiles of the brighter pulsars should allow detailed tests of magnetospheric partic le acceleration and radiation mechanisms, by comparing data with theo retical models that have been developed. Additionally, the LAT will have the sensitivity to allow blind pulsation searches of nearly all un identified EGRET sources, to possibly uncover more radio-quiet Geming a-like pulsars.

  5. Prospects for Pulsar Studies with the GLAST Large Area Telescope

    NASA Technical Reports Server (NTRS)

    Harding, Alice K.

    2006-01-01

    The Large Area Telescope (LAT) on the Gamma-ray Large Area Space Telescope (GLAST) will have unprecedented sensitivity and energy resolution for gamma-rays in the range of 30 MeV to 200 GeV. GLAST is therefore expected to provide major advances in the understanding of high-energy emission from rotation-powered pulsars. As the only presently known galactic GeV source class, pulsars will be one of the most important sources for study with GLAST. The main science goals of the LAT for pulsar studies include an increase in the number of detected radio-loud and radio-quiet gamma ray pulsars, including millisecond pulsars, giving much better statistics for elucidating population characteristics, measurement of the high-energy spectrum and the shape of spectral cutoffs and determining pulse profiles for a variety of pulsars of different age. Further, measurement of phase-resolved spectra and energy dependent pulse profiles of the brighter pulsars should allow detailed tests of magnetospheric particle acceleration and radiation mechanisms, by comparing data with theoretical models that have been developed. Additionally, the LAT will have the sensitivity to allow blind pulsation searches of nearly all unidentified EGRET sources, to possibly uncover more radio-quiet Geminga-like pulsars.

  6. Strength by atomic force microscopy (AFM): Molecular dynamics of water layer squeezing on magnesium oxide

    NASA Astrophysics Data System (ADS)

    Kendall, K.; Dhir, Aman; Yong, Chin W.

    2010-11-01

    Localised strength testing of materials is often carried out in an atomic force microscope (AFM), as foreseen by Kelly in his book Strong Solids (Clarendon Press, Oxford, 1966). During AFM indentation experiments, contamination can strongly influence the observed strength and theoretical interpretation of the results is a major problem. Here, we use molecular dynamics computer modelling to describe the contact of NaCl and MgO crystal probes onto surfaces, comparable to an AFM experiment. Clean NaCl gave elastic, brittle behaviour in contact simulations at 300 K, whereas MgO was more plastic, leading to increased toughness. This paper also considers the strength of an oxide substrate contaminated by water molecules and tested by indentation with a pyramidal probe of oxide crystal. Recent theory on the effect of liquid contaminant layers on surface strength has been mainly focussed on Lennard Jones (LJ) molecules with some studies on alcohols and water, described by molecular dynamics, which allows the molecules to be squeezed out as the crystal lattice is deformed. In this work, we have focused on water by studying the forces between a magnesium oxide (MgO) atomic force microscope (AFM) probe and an MgO slab. Force versus separation has been plotted as the AFM probe was moved towards and away from the substrate. Simulation results showed that the water layers could be removed in steps, giving up to four force peaks. The last monolayer of water could not be squeezed out, even at pressures where MgO deformed plastically. Interestingly, with water present, strength was reduced, but more in tensile than compressive measurements. In conclusion, water contaminating the oxide surface in AFM strength testing is structured. Water layer squeezing removal can be predicted by molecular modelling, which may be verified by AFM experiments to show that water can influence the strength of perfect crystals at the nanometre scale.

  7. WE-E-18A-01: Large Area Avalanche Amorphous Selenium Sensors for Low Dose X-Ray Imaging

    SciTech Connect

    Scheuermann, J; Goldan, A; Zhao, W; Tousignant, O; Leveille, S

    2014-06-15

    Purpose: A large area indirect flat panel imager (FPI) with avalanche gain is being developed to achieve x-ray quantum noise limited low dose imaging. It uses a thin optical sensing layer of amorphous selenium (a-Se), known as High-Gain Avalanche Rushing Photoconductor (HARP), to detect optical photons generated from a high resolution x-ray scintillator. We will report initial results in the fabrication of a solid-state HARP structure suitable for a large area FPI. Our objective is to establish the blocking layer structures and defect suppression mechanisms that provide stable and uniform avalanche gain. Methods: Samples were fabricated as follows: (1) ITO signal electrode. (2) Electron blocking layer. (3) A 15 micron layer of intrinsic a-Se. (4) Transparent hole blocking layer. (5) Multiple semitransparent bias electrodes to investigate avalanche gain uniformity over a large area. The sample was exposed to 50ps optical excitation pulses through the bias electrode. Transient time of flight (TOF) and integrated charge was measured. A charge transport simulation was developed to investigate the effects of varying blocking layer charge carrier mobility on defect suppression, avalanche gain and temporal performance. Results: Avalanche gain of ∼200 was achieved experimentally with our multi-layer HARP samples. Simulations using the experimental sensor structure produced the same magnitude of gain as a function of electric field. The simulation predicted that the high dark current at a point defect can be reduced by two orders of magnitude by blocking layer optimization which can prevent irreversible damage while normal operation remained unaffected. Conclusion: We presented the first solid state HARP structure directly scalable to a large area FPI. We have shown reproducible and uniform avalanche gain of 200. By reducing mobility of the blocking layers we can suppress defects and maintain stable avalanche. Future work will optimize the blocking layers to prevent lag

  8. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  9. Integration of in situ RHEED with magnetron sputter deposition for atomic layer controlled growth

    NASA Astrophysics Data System (ADS)

    Podkaminer, Jacob P.

    Epitaxial thin films continue to be one of the most promising topics within electronic materials research. Sputter deposition is one process by which these films can be formed and is a widely used growth technique for a large range of technologically important material systems. Epitaxial films of carbides, nitrides, metals, oxides and more can all be formed during the sputter process which offers the ability to deposit smooth and uniform films from the research level up to an industrial scale. This tunable kinematic deposition process excels in easily adapting for a large range of environments and growth procedures. Despite the vast advantages associated with sputter deposition, there is a significant lack of in situ analysis options during sputtering. In particular, the area of real time atomic layer control is severely deficient. Atomic layer controlled growth of epitaxial thin films and artificially layered superlattices is critical for both understanding their emergent phenomena and engineering novel material systems and devices. Reflection high-energy electron diffraction (RHEED) is one of the most common in situ analysis techniques during thin film deposition that is rarely used during sputtering due to the strong permanent magnets in magnetron sputter sources and their effect on the RHEED electron beam. In this work we have solved this problem and designed a novel way to deter the effect of the magnets for a wide range of growth geometries and demonstrate the ability for the first time to have layer by layer control during sputter deposition by in situ RHEED. A novel growth chamber that can seamlessly change between pulsed laser deposition and sputtering with RHEED for the growth of complex heterostructures has been designed and implemented. Epitaxial thin films of LaAlO3, La1-xSrxMnO3, and SrRuO3 have all been deposited by sputtering and shown to exhibit clear and extended RHEED oscillations. To solve the magnet issue, a finite element model has been

  10. Selective atomic layer deposition with electron-beam patterned self-assembled monolayers

    SciTech Connect

    Huang, Jie; Lee, Mingun; Kim, Jiyoung

    2012-01-15

    The authors selectively deposited nanolines of titanium oxide (TiO{sub 2}) through atomic layer deposition (ALD) using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a nucleation inhibition layer. Electron-beam (e-beam) patterning is used to prepare nanoline patterns in the OTS SAM on SiO{sub 2}/Si substrates suitable for selective ALD. The authors have investigated the effect of an e-beam dose on the pattern width of the selectively deposited TiO{sub 2} lines. A high dose (e.g., 20 nC/cm) causes broadening of the linewidth possibly due to scattering, while a low dose (e.g., 5 nC/cm) results in a low TiO{sub 2} deposition rate because of incomplete exposure of the OTS SAMs. The authors have confirmed that sub-30 nm isolated TiO{sub 2} lines can be achieved by selective ALD combined with OTS patterned by EBL at an accelerating voltage of 2 kV and line dose of 10 nC/cm. This research offers a new approach for patterned gate dielectric layer fabrication, as well as potential applications for nanosensors and solar cells.

  11. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kim, Hyoungsub; Chui, Chi On; Saraswat, Krishna C.; McIntyre, Paul C.

    2003-09-01

    High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ˜55-Å ZrO2 film on a Ge (100) substrate using ZrCl4 and H2O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO2 and [100] Ge//[100] ZrO2] without a distinct interfacial layer, unlike the situation observed when ZrO2 is deposited using the same method on Si. Relatively large lattice mismatch (˜10%) between ZrO2 and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (>200 mV) and high frequency dispersion were observed in capacitance-voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density.

  12. Wafer-scale growth of MoS2 thin films by atomic layer deposition.

    PubMed

    Pyeon, Jung Joon; Kim, Soo Hyun; Jeong, Doo Seok; Baek, Seung-Hyub; Kang, Chong-Yun; Kim, Jin-Sang; Kim, Seong Keun

    2016-05-19

    The wafer-scale synthesis of MoS2 layers with precise thickness controllability and excellent uniformity is essential for their application in the nanoelectronics industry. Here, we demonstrate the atomic layer deposition (ALD) of MoS2 films with Mo(CO)6 and H2S as the Mo and S precursors, respectively. A self-limiting growth behavior is observed in the narrow ALD window of 155-175 °C. Long H2S feeding times are necessary to reduce the impurity contents in the films. The as-grown MoS2 films are amorphous due to the low growth temperature. Post-annealing at high temperatures under a H2S atmosphere efficiently improves the film properties including the crystallinity and chemical composition. An extremely uniform film growth is achieved even on a 4 inch SiO2/Si wafer. These results demonstrate that the current ALD process is well suited for the synthesis of MoS2 layers for application in industry. PMID:27166838

  13. Wafer-scale growth of MoS2 thin films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Pyeon, Jung Joon; Kim, Soo Hyun; Jeong, Doo Seok; Baek, Seung-Hyub; Kang, Chong-Yun; Kim, Jin-Sang; Kim, Seong Keun

    2016-05-01

    The wafer-scale synthesis of MoS2 layers with precise thickness controllability and excellent uniformity is essential for their application in the nanoelectronics industry. Here, we demonstrate the atomic layer deposition (ALD) of MoS2 films with Mo(CO)6 and H2S as the Mo and S precursors, respectively. A self-limiting growth behavior is observed in the narrow ALD window of 155-175 °C. Long H2S feeding times are necessary to reduce the impurity contents in the films. The as-grown MoS2 films are amorphous due to the low growth temperature. Post-annealing at high temperatures under a H2S atmosphere efficiently improves the film properties including the crystallinity and chemical composition. An extremely uniform film growth is achieved even on a 4 inch SiO2/Si wafer. These results demonstrate that the current ALD process is well suited for the synthesis of MoS2 layers for application in industry.

  14. Crossover between silicene and ultra-thin Si atomic layers on Ag(111) surfaces

    NASA Astrophysics Data System (ADS)

    Guo, Zhi-Xin; Oshiyama, Atsushi

    2015-04-01

    We report on total-energy electronic structure calculations in the density-functional theory performed for the ultra-thin atomic layers of Si on Ag(111) surfaces. We find several distinct stable silicene structures: \\sqrt{3}× \\sqrt{3}, 3 × 3, \\sqrt{7}× \\sqrt{7} with the thickness of Si increasing from monolayer to quad-layer. The structural bistability and tristability of the multilayer silicene structures on Ag surfaces are obtained, where the calculated transition barriers infer the occurrence of the flip-flop motion at low temperature. The calculated scanning tunneling microscope (STM) images agree well with the experimental observations. We also find the stable existence of 2 × 1 π-bonded chain and 7 × 7 dimer-adatom-stacking fault Si(111)-surface structures on Ag(111), which clearly shows the crossover of silicene-silicon structures for the multilayer Si on Ag surfaces. We further find the absence of the Dirac states for multilayer silicene on Ag(111) due to the covalent interactions of the silicene-Ag interface and Si-Si interlayer. Instead, we find a new state near the Fermi level composed of π orbitals located on the surface layer of \\sqrt{3}× \\sqrt{3} multilayer silicene, which satisfies the hexagonal symmetry and exhibits the linear energy dispersion. By examining the electronic properties of 2 × 1 π-bonded chain structures, we find that the surface-related π states of multilayer Si structures are robust on Ag surfaces.

  15. Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

    SciTech Connect

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung; Hwang, Hyeon Jun; Ha, Min-Woo

    2015-03-23

    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm{sup 2}/V·s and the lowest n-type carrier concentration of approximately 1.0 × 10{sup 18}/cm{sup 3} were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

  16. Atomically thin two-dimensional materials as hole extraction layers in organolead halide perovskite photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Kim, Yu Geun; Kwon, Ki Chang; Le, Quyet Van; Hong, Kootak; Jang, Ho Won; Kim, Soo Young

    2016-07-01

    Atomically thin two-dimensional materials such as MoS2, WS2, and graphene oxide (GO) are used as hole extraction layers (HEL) in organolead halide perovskites solar cells (PSCs) instead of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HEL. MoS2 and WS2 layers with a polycrystalline structure were synthesized by a chemical deposition method using a uniformly spin-coated (NH4)MoS4 and (NH4)WS4 precursor solution. GO was synthesized by the oxidation of natural graphite powder using Hummers' method. The work functions of MoS2, WS2, and GO are measured to be 5.0, 4.95, and 5.1 eV, respectively. The X-ray diffraction spectrum indicated that the synthesized perovskite material is CH3NH3PbI3-xClx. The PSCs with the p-n junction structure were fabricated based on the CH3NH3PbI3-xClx perovskite layer. The power conversion efficiencies of the MoS2, WS2, and GO-based PSCs were 9.53%, 8.02%, and 9.62%, respectively, which are comparable to those obtained from PEDOT:PSS-based devices (9.93%). These results suggest that two-dimensional materials such as MoS2, WS2, and GO can be promising candidates for the formation of HELs in the PSCs.

  17. Phase control of iridium and iridium oxide thin films in atomic layer deposition

    SciTech Connect

    Kim, Sung-Wook; Kwon, Se-Hun; Kwak, Dong-Kee; Kang, Sang-Won

    2008-01-15

    The atomic layer deposition of iridium (Ir) and iridium oxide (IrO{sub 2}) films was investigated using an alternating supply of (ethylcyclopentadienyl)(1,5-cyclooctadiene) iridium and oxygen gas at temperatures between 230 and 290 deg. C. The phase transition between Ir and IrO{sub 2} occurred at the critical oxygen partial pressure during the oxygen injection pulse. The oxygen partial pressure was controlled by the O{sub 2}/(Ar+O{sub 2}) ratio or deposition pressures. The resistivity of the deposited Ir and IrO{sub 2} films was about 9 and 120 {mu}{omega} cm, respectively. In addition, the critical oxygen partial pressure for the phase transition between Ir and IrO{sub 2} was increased with increasing the deposition temperature. Thus, the phase of the deposited film, either Ir or IrO{sub 2}, was controlled by the oxygen partial pressure and the deposition temperature. However, the formation of a thin Ir layer was detected between the IrO{sub 2} and SiO{sub 2} substrate. To remove this interfacial layer, the oxygen partial pressure is increased to a severe condition. And the impurity contents were below the detection limit of Auger electron spectroscopy in both Ir and IrO{sub 2} films.

  18. Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

    PubMed

    Zhu, Hui; Qin, Xiaoye; Cheng, Lanxia; Azcatl, Angelica; Kim, Jiyoung; Wallace, Robert M

    2016-07-27

    Exfoliated molybdenum disulfide (MoS2) is shown to chemically oxidize in a layered manner upon exposure to a remote O2 plasma. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and atomic force microscopy (AFM) are employed to characterize the surface chemistry, structure, and topography of the oxidation process and indicate that the oxidation mainly occurs on the topmost layer without altering the chemical composition of underlying layer. The formation of S-O bonds upon short, remote plasma exposure pins the surface Fermi level to the conduction band edge, while the MoOx formation at high temperature modulates the Fermi level toward the valence band through band alignment. A uniform coverage of monolayer amorphous MoO3 is obtained after 5 min or longer remote O2 plasma exposure at 200 °C, and the MoO3 can be completely removed by annealing at 500 °C, leaving a clean ordered MoS2 lattice structure as verified by XPS, LEED, AFM, and scanning tunneling microscopy. This work shows that a remote O2 plasma can be useful for both surface functionalization and a controlled thinning method for MoS2 device fabrication processes. PMID:27386734

  19. Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization Pathways

    NASA Astrophysics Data System (ADS)

    Wang, Zenghui; Feng, Philip X.-L.

    2016-07-01

    Atomic layer crystals are emerging building blocks for enabling new two-dimensional (2D) nanomechanical systems, whose motions can be coupled to other attractive physical properties in such 2D systems. Optical interferometry has been very effective in reading out the infinitesimal motions of these 2D structures and spatially resolving different modes. To quantitatively understand the detection efficiency and its dependence on the device parameters and interferometric conditions, here we present a systematic study of the intrinsic motion responsivity in 2D nanomechanical systems using a Fresnel-law-based model. We find that in monolayer to 14-layer structures, MoS2 offers the highest responsivity among graphene, h-BN, and MoS2 devices and for the three commonly used visible laser wavelengths (633, 532, and 405 nm). We also find that the vacuum gap resulting from the widely used 300 nm-oxide substrate in making 2D devices, fortunately, leads to close-to-optimal responsivity for a wide range of 2D flakes. Our results elucidate and graphically visualize the dependence of motion transduction responsivity upon 2D material type and number of layers, vacuum gap, oxide thickness, and detecting wavelength, thus providing design guidelines for constructing 2D nanomechanical systems with optimal optical motion readout.

  20. Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization Pathways.

    PubMed

    Wang, Zenghui; Feng, Philip X-L

    2016-01-01

    Atomic layer crystals are emerging building blocks for enabling new two-dimensional (2D) nanomechanical systems, whose motions can be coupled to other attractive physical properties in such 2D systems. Optical interferometry has been very effective in reading out the infinitesimal motions of these 2D structures and spatially resolving different modes. To quantitatively understand the detection efficiency and its dependence on the device parameters and interferometric conditions, here we present a systematic study of the intrinsic motion responsivity in 2D nanomechanical systems using a Fresnel-law-based model. We find that in monolayer to 14-layer structures, MoS2 offers the highest responsivity among graphene, h-BN, and MoS2 devices and for the three commonly used visible laser wavelengths (633, 532, and 405 nm). We also find that the vacuum gap resulting from the widely used 300 nm-oxide substrate in making 2D devices, fortunately, leads to close-to-optimal responsivity for a wide range of 2D flakes. Our results elucidate and graphically visualize the dependence of motion transduction responsivity upon 2D material type and number of layers, vacuum gap, oxide thickness, and detecting wavelength, thus providing design guidelines for constructing 2D nanomechanical systems with optimal optical motion readout. PMID:27464908

  1. Atomic layer deposited titanium dioxide coatings on KD-II silicon carbide fibers and their characterization

    NASA Astrophysics Data System (ADS)

    Cao, Shiyi; Wang, Jun; Wang, Hao

    2016-03-01

    To provide oxidation protection and/or to act as an interfacial coating, titanium oxide (TiO2) coatings were deposited on KD-II SiC fibers by employing atomic layer deposition (ALD) technique with tetrakis(dimethylamido)titanium (TDMAT) and water (H2O) as precursors. The average deposition rate was about 0.08 nm per cycle, and the prepared coatings were smooth, uniform and conformal, shielding the fibers entirely. The as-deposited coatings were amorphous regardless of the coating thickness, and changed to anatase and rutile crystal phase after annealing at 600 °C and 1000 °C, respectively. The oxidation measurement suggests that the TiO2 coating enhanced the oxidation resistance of SiC fibers obviously. SiC fibers coated with a 70-nm-thick TiO2 layer retained a relatively high tensile strength of 1.66 GPa even after exposition to air at 1400 °C for 1 h, and thick silica layer was not observed. In contrast, uncoated SiC fibers were oxidized dramatically through the same oxidation treatment, covered with a macro-cracked thick silica film, and the tensile strength was not measurable due to interfilament adhesion. The above results indicate that TiO2 films deposited by ALD are a promising oxidation resistance coating for SiC fibers.

  2. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates

    NASA Astrophysics Data System (ADS)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-04-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  3. Low temperature temporal and spatial atomic layer deposition of TiO{sub 2} films

    SciTech Connect

    Aghaee, Morteza Maydannik, Philipp S.; Johansson, Petri; Kuusipalo, Jurkka; Creatore, Mariadriana; Homola, Tomáš; Cameron, David C.

    2015-07-15

    Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80–120 °C) were used to grow moisture barrier TiO{sub 2} films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å/cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO{sub 2} films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO{sub 2}, but the deposition time could be reduced using SALD. The TiO{sub 2} films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 × 10{sup −4} g day{sup −1} m{sup −2} (38 °C and 90% RH) was measured for 20 nm of TiO{sub 2} film deposited by plasma-assisted ALD.

  4. Area-selective atomic layer deposition of platinum using photosensitive polyimide.

    PubMed

    Vervuurt, René H J; Sharma, Akhil; Jiao, Yuqing; Kessels, Wilhelmus Erwin M M; Bol, Ageeth A

    2016-10-01

    Area-selective atomic layer deposition (AS-ALD) of platinum (Pt) was studied using photosensitive polyimide as a masking layer. The polyimide films were prepared by spin-coating and patterned using photolithography. AS-ALD of Pt using poly(methyl-methacrylate) (PMMA) masking layers was used as a reference. The results show that polyimide has excellent selectivity towards the Pt deposition, after 1000 ALD cycles less than a monolayer of Pt is deposited on the polyimide surface. The polyimide film could easily be removed after ALD using a hydrogen plasma, due to a combination of weakening of the polyimide resist during Pt ALD and the catalytic activity of Pt traces on the polyimide surface. Compared to PMMA for AS-ALD of Pt, polyimide has better temperature stability. This resulted in an improved uniformity of the Pt deposits and superior definition of the Pt patterns. In addition, due to the absence of reflow contamination using polyimide the nucleation phase during Pt ALD is drastically shortened. Pt patterns down to 3.5 μm were created with polyimide, a factor of ten smaller than what is possible using PMMA, at the typical Pt ALD processing temperature of 300 °C. Initial experiments indicate that after further optimization of the polyimide process Pt features down to 100 nm should be possible, which makes AS-ALD of Pt using photosensitive polyimide a promising candidate for patterning at the nanoscale. PMID:27581085

  5. Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

    NASA Astrophysics Data System (ADS)

    Ramanan, Narayanan; Lee, Bongmook; Kirkpatrick, Casey; Suri, Rahul; Misra, Veena

    2013-07-01

    In order to minimize ac-dc dispersion, reduce gate leakage and maximize ac transconductance, there is a critical need to identify optimal interfaces, low-k passivation dielectrics and high-k gate dielectrics. In this paper, an investigation of different atomic layer deposited (ALD) passivation dielectrics on AlGaN/GaN-based hetero-junction field effect transistors (HFETs) was performed. Angle-resolved x-ray photoelectron spectroscopy revealed that HCl/HF and NH4OH cleans resulted in a reduction of native oxide and carbon levels at the GaN surface. The role of high temperature anneals, following the ALD, on the effectiveness of passivation was also explored. Gate-lag measurements on HFETs passivated with a thin ALD high-k Al2O3 or HfAlO layer capped with a thick plasma enhanced chemical vapor deposited (PECVD) low-k SiO2 layer, annealed at 600-700 °C, were found to be as good as or even better than those with conventional PECVD silicon nitride passivation. Further, it was observed that different passivation dielectric stacks required different anneal temperatures for improved gate-lag behavior compared to the as-deposited case.

  6. Quantum Hall states of atomic Bose gases: Density profiles in single-layer and multilayer geometries

    SciTech Connect

    Cooper, N. R.; Lankvelt, F. J. M. van; Reijnders, J. W.; Schoutens, K.

    2005-12-15

    We describe the density profiles of confined atomic Bose gases in the high-rotation limit, in single-layer and multilayer geometries. We show that, in a local-density approximation, the density in a single layer shows a landscape of quantized steps due to the formation of incompressible liquids, which are analogous to fractional quantum Hall liquids for a two-dimensional electron gas in a strong magnetic field. In a multilayered setup we find different phases, depending on the strength of the interlayer tunneling t. We discuss the situation where a vortex lattice in the three-dimensional condensate (at large tunneling) undergoes quantum melting at a critical tunneling t{sub c{sub 1}}. For tunneling well below t{sub c{sub 1}} one expects weakly coupled or isolated layers, each exhibiting a landscape of quantum Hall liquids. After expansion, this gives a radial density distribution with characteristic features (cusps) that provide experimental signatures of the quantum Hall liquids.

  7. Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization Pathways

    PubMed Central

    Wang, Zenghui; Feng, Philip X.-L.

    2016-01-01

    Atomic layer crystals are emerging building blocks for enabling new two-dimensional (2D) nanomechanical systems, whose motions can be coupled to other attractive physical properties in such 2D systems. Optical interferometry has been very effective in reading out the infinitesimal motions of these 2D structures and spatially resolving different modes. To quantitatively understand the detection efficiency and its dependence on the device parameters and interferometric conditions, here we present a systematic study of the intrinsic motion responsivity in 2D nanomechanical systems using a Fresnel-law-based model. We find that in monolayer to 14-layer structures, MoS2 offers the highest responsivity among graphene, h-BN, and MoS2 devices and for the three commonly used visible laser wavelengths (633, 532, and 405 nm). We also find that the vacuum gap resulting from the widely used 300 nm-oxide substrate in making 2D devices, fortunately, leads to close-to-optimal responsivity for a wide range of 2D flakes. Our results elucidate and graphically visualize the dependence of motion transduction responsivity upon 2D material type and number of layers, vacuum gap, oxide thickness, and detecting wavelength, thus providing design guidelines for constructing 2D nanomechanical systems with optimal optical motion readout. PMID:27464908

  8. Self-catalyzed growth of large-area nanofilms of two-dimensional carbon.

    PubMed

    Qian, Xuemin; Liu, Huibiao; Huang, Changshui; Chen, Songhua; Zhang, Liang; Li, Yongjun; Wang, Jizheng; Li, Yuliang

    2015-01-01

    The graphdiyne (GD), a carbon allotrope with a 2D structure comprising benzene rings and carbon-carbon triple bonds, can be synthesized through cross-coupling on the surface of copper foil. The key problem is in understanding the dependence of layers number and properties, however, the controlled growth of the layers numbers of GD film have not been demonstrated, its controlled growth into large-area and high ordered films with different numbers of layers is still an important challenge. Here, we show that a new strategy for synthesizing GD films with 2D nanostructures on ZnO nanorod arrays through a combination of reduction and a self-catalyzed vapor-liquid-solid growth process, using GD powder as the vapor source and ZnO nanorod arrays as the substrate. HRTEM shows the distance between pairs of streaks being approximately 0.365 nm by different thicknesses of GD films. The approach enables us to construct large-area ordered semiconductive films with high-quality surfaces showing high conductivity (up to 2800 S cm(-1)). FETs were fabricated based on the well ordered films; we prepared and measured over 100 devices. Devices incorporating these well-ordered and highly conductive GD films exhibited field-effect mobility as high as 100 cm(2) V(-1) s(-1). PMID:25583680

  9. Self-catalyzed Growth of Large-Area Nanofilms of Two-Dimensional Carbon

    PubMed Central

    Qian, Xuemin; Liu, Huibiao; Huang, Changshui; Chen, Songhua; Zhang, Liang; Li, Yongjun; Wang, Jizheng; Li, Yuliang

    2015-01-01

    The graphdiyne (GD), a carbon allotrope with a 2D structure comprising benzene rings and carbon–carbon triple bonds, can be synthesized through cross-coupling on the surface of copper foil. The key problem is in understanding the dependence of layers number and properties, however, the controlled growth of the layers numbers of GD film have not been demonstrated, its controlled growth into large-area and high ordered films with different numbers of layers is still an important challenge. Here, we show that a new strategy for synthesizing GD films with 2D nanostructures on ZnO nanorod arrays through a combination of reduction and a self-catalyzed vapor–liquid–solid growth process, using GD powder as the vapor source and ZnO nanorod arrays as the substrate. HRTEM shows the distance between pairs of streaks being approximately 0.365 nm by different thicknesses of GD films. The approach enables us to construct large-area ordered semiconductive films with high-quality surfaces showing high conductivity (up to 2800 S cm−1). FETs were fabricated based on the well ordered films; we prepared and measured over 100 devices. Devices incorporating these well-ordered and highly conductive GD films exhibited field-effect mobility as high as 100 cm2 V−1 s−1. PMID:25583680

  10. Transverse charge transport through DNA oligomers in large-area molecular junctions

    NASA Astrophysics Data System (ADS)

    Katsouras, Ilias; Piliego, Claudia; Blom, Paul W. M.; de Leeuw, Dago M.

    2013-09-01

    We investigate the nature of charge transport in deoxyribonucleic acid (DNA) using self-assembled layers of DNA in large-area molecular junctions. A protocol was developed that yields dense monolayers where the DNA molecules are not standing upright, but are lying flat on the substrate. As a result the charge transport is measured not along the DNA molecules but in the transverse direction, across their diameter. The electrical transport data are consistent with the derived morphology. We demonstrate that the charge transport mechanism through DNA is identical to non-resonant tunneling through alkanethiols with identical length, classifying DNA as a dielectric.

  11. Design and Characteristics of the Anticoincidence Detector for the GLAST Large Area Telescope

    NASA Technical Reports Server (NTRS)

    Moiseev, A. A.; Hartman, R. C.; Johnson, T. E.; Ormes, J. F.; Thompson, D. J.

    2005-01-01

    The Anti-Coincidence Detector (ACD) is the outermost detector layer in the GLAST Large Area Telescope (LAT), surrounding the top and sides of the tracker. The purpose of the ACD is to detect and veto incident cosmic ray charged particles, which outnumber cosmic gamma rays by 3-4 orders of magnitude. The challenge in ACD design is that it must have high (0.9997) detection efficiency for singly charged relativistic particles, but must also have low sensitivity to backsplash particles. These are products of high- energy interactions in the LAT calorimeter. They can cause a veto signal in the ACD, resulting in loss of good gamma-ray events.

  12. Large area low cost processing for CIS photovoltaics. Final technical report

    SciTech Connect

    B. Basol; G. Norsworthy; C. Leidholm; A. Halani; R. Roe; V. Kapur

    1999-07-22

    An ink coating method was developed for CIS absorber deposition. The technique involves four processing steps: (1) preparation of a Cu-In alloy powder, (2) preparation of an ink using this powder, (3) deposition of the ink on a substrate in the form of a precursor layer, and (4) selenization to convert the Cu-In precursor into a fused CIS film. Absorbers grown by this low-cost, large-area method were used in the fabrication of 10.5% efficient solar cells.

  13. A novel lithography technique for formation of large areas of uniform nanostructures

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Dey, Dibyendu; Memis, Omer G.; Katsnelson, Alex; Mohseni, Hooman

    2008-08-01

    With nanotechnology becoming widely used, many applications such as plasmonics, sensors, storage devices, solar cells, nano-filtration and artificial kidneys require the structures with large areas of uniform periodic nanopatterns. Most of the current nano-manufacturing techniques, including photolithography, electron-beam lithography, and focal ion beam milling, are either slow or expensive to be applied into the areas. Here, we demonstrate an alternative and novel lithography technique - Nanosphere Photolithography (NSP) - that generates a large area of highly uniform periodic nanoholes or nanoposts by utilizing the monolayer of hexagonally close packed (HCP) silica microspheres as super-lenses on top of photoresist. The size of the nanopatterns generated is almost independent of the sphere sizes and hence extremely uniform patterns can be obtained. We demonstrate that the method can produce hexagonally packed arrays of hole of sub-250 nm size in positive photoresist using a conventional exposure system with a broadband UV source centered at 400 nm. We also show a large area of highly uniform gold nanoholes (~180 nm) and nanoposts (~300nm) array with the period of 1 μm fabricated by the combination of lift-off and NSP. The process is not limited to gold. Similar structures have been shown with aluminum and silicon dioxide layer. The period and size of the structures can also be tuned by changing proper parameters. The technique applying self-assembled and focusing properties of micro-/nano-spheres into photolithography establishes a new paradigm for mask-less photolithography technique, allowing rapid and economical creation of large areas of periodic nanostructures with a high throughput.

  14. A nanophotonic atom trap toward collective atom-light interactions and the design of a novel protection layer for superconducting circuits toward a hybrid quantum system

    NASA Astrophysics Data System (ADS)

    Lee, J.; Meng, Y.; Park, D. H.; Dagenais, M.; Rolston, S. L.

    2014-05-01

    A centimeter long silicon nitride nanophotonic waveguide with inverse-tapered ends has been developed to address and trap many cold neutral atoms (87Rb) for studying collective atom-light interactions and a hybrid quantum system. Two-color evanescent trapping fields (750 nm and 1064 nm) of guided modes (TE0) can confine cold neutral atoms above the waveguide, and its inverse-tapered waveguide-end has been used for higher input coupling. For a hybrid quantum system which couples trapped cold neutral atoms to superconducting (SC) circuits through magnetic dipole coupling, we consider a novel SC protection layer because SC circuits are vulnerable to the scattered light from trapping fields. Therefore, we design several types of dielectric and lossy multi-wavelength Bragg layers to protect SC circuits from NIR scattered optical photons and from a broadband MIR blackbody radiation of the nanophotonic device, considering the maximal back-transmission of the SC circuits' electro-magnetic fields through the layer and the heat transfer to SC circuits through the protection layer from absorbed scattered photons. This work is supported by ARO MURI award W911NF0910406.

  15. A comprehensive study on atomic layer deposition of molybdenum sulfide for electrochemical hydrogen evolution

    NASA Astrophysics Data System (ADS)

    Kwon, Do Hyun; Jin, Zhenyu; Shin, Seokhee; Lee, Wook-Seong; Min, Yo-Sep

    2016-03-01

    Atomic layer deposition (ALD) has emerged as an efficient method to design and prepare catalysts with atomic precision. Here, we report a comprehensive study on ALD of molybdenum sulfide (MoSx) for an electrocatalytic hydrogen evolution reaction. By using molybdenum hexacarbonyl and dimethyldisulfide as the precursors of Mo and S, respectively, the MoSx catalysts are grown at 100 °C on porous carbon fiber papers (CFPs). The ALD process results in the growth of particle-like MoSx on the CFP due to the lack of adsorption sites, and its crystallographic structure is a mixture of amorphous and nano-crystalline phases. In order to unveil the intrinsic activity of the ALD-MoSx, the exchange current densities, Tafel slopes, and turnover frequencies of the catalysts grown under various ALD conditions have been investigated by considering the fractional surface coverage of MoSx on the CFP and catalytically-active surface area. In addition, the ALD-MoSx/CFP catalysts exhibit excellent catalytic stability due to the strong adhesion of MoSx on the CFP and the mixed phase.Atomic layer deposition (ALD) has emerged as an efficient method to design and prepare catalysts with atomic precision. Here, we report a comprehensive study on ALD of molybdenum sulfide (MoSx) for an electrocatalytic hydrogen evolution reaction. By using molybdenum hexacarbonyl and dimethyldisulfide as the precursors of Mo and S, respectively, the MoSx catalysts are grown at 100 °C on porous carbon fiber papers (CFPs). The ALD process results in the growth of particle-like MoSx on the CFP due to the lack of adsorption sites, and its crystallographic structure is a mixture of amorphous and nano-crystalline phases. In order to unveil the intrinsic activity of the ALD-MoSx, the exchange current densities, Tafel slopes, and turnover frequencies of the catalysts grown under various ALD conditions have been investigated by considering the fractional surface coverage of MoSx on the CFP and catalytically

  16. Dynamic templating: a large area processing route for the assembly of periodic arrays of sub-micrometer and nanoscale structures.

    PubMed

    Farzinpour, Pouyan; Sundar, Aarthi; Gilroy, Kyle D; Eskin, Zachary E; Hughes, Robert A; Neretina, Svetlana

    2013-03-01

    A substrate-based templated assembly route has been devised which offers large-area, high-throughput capabilities for the fabrication of periodic arrays of sub-micrometer and nanometer-scale structures. The approach overcomes a significant technological barrier to the widespread use of substrate-based templated assembly by eliminating the need for periodic templates having nanoscale features. Instead, it relies upon the use of a dynamic template with dimensions that evolve in time from easily fabricated micrometer dimensions to those on the nanoscale as the assembly process proceeds. The dynamic template consists of a pedestal of a sacrificial material, typically antimony, upon which an ultrathin layer of a second material is deposited. When heated, antimony sublimation results in a continuous reduction in template size where the motion of the sublimation fronts direct the diffusion of atoms of the second material to a predetermined location. The route has broad applicability, having already produced periodic arrays of gold, silver, copper, platinum, nickel, cobalt, germanium and Au-Ag alloys on substrates as diverse as silicon, sapphire, silicon-carbide, graphene and glass. Requiring only modest levels of instrumentation, the process provides an enabling route for any reasonably equipped researcher to fabricate periodic arrays that would otherwise require advanced fabrication facilities. PMID:23354129

  17. GLAST, the Gamma-ray Large Area Space Telescope

    NASA Technical Reports Server (NTRS)

    Ritz, Steven

    2007-01-01

    The Gamma-ray Large Area Space Telescope, GLAST, is a mission to measure the cosmic gamma-ray flux in the energy range 20 MeV to greater than 300 GeV, with supporting measurements for gamma-ray bursts from 10 keV to 25 MeV. With its upcoming launch in 2008, GLAST will open a new and important window on a wide variety of phenomena, including black holes and active galactic nuclei; the optical-UV extragalactic background light, gamma-ray bursts; the origin of cosmic rays and supernova remnants; and searches for hypothetical new phenomena such as supersymmetric dark matter annihilations and Lorentz invariance violation. In addition to the science opportunities, this talk includes a description of the instruments, the collaboration between particle physicists and astrophysicists, the opportunities for guest observers, and the mission status.

  18. A three dimensionally position sensitive large area detector

    NASA Astrophysics Data System (ADS)

    Pochodzalla, J.; Butsch, R.; Heck, B.; Hlawatsch, G.; Miczaika, A.; Rabe, H. J.; Rosner, G.

    1985-01-01

    A large area detector consisting of a parallel plate avalanche counter (PPAC) and a trapezohedral ionization chamber (TIC) is described. Its active area is 184 cm 2. The time resolution of the PPAC is 175 ps. The energy resolution of the TIC is 0.4%, the energy loss resolution 2.8%, the nuclear charge resolution 2.3%. The TIC is position sensitive in three dimensions. The position x is measured via a saw-tooth anode with a resolution of 0.7 mm; the drift time coordinate shows a resolution of δy ≅ mm. The range z is determined by a new technique, a graded density Frisch grid. It enlarges the dynamic range of the charge measurement down to the Bragg maximum at E/ A ˜ 1 MeV. The resolution is δZ/ Z ≅ 3.5%

  19. Large area nuclear particle detectors using ET materials, phase 2

    NASA Technical Reports Server (NTRS)

    Wrigley, Charles Y.; Storti, George M.; Walter, Lee; Mathews, Scott

    1990-01-01

    This report presents work done under a Phase 2 SBIR contract for demonstrating large area detector planes utilizing Quantex electron trapping materials as a film medium for storing high-energy nuclide impingement information. The detector planes utilize energy dissipated by passage of the high-energy nuclides to produce localized populations of electrons stored in traps. Readout of the localized trapped electron populations is effected by scanning the ET plane with near-infrared, which frees the trapped electrons and results in optical emission at visible wavelengths. The effort involved both optimizing fabrication technology for the detector planes and developing a readout system capable of high spatial resolution for displaying the recorded nuclide passage tracks.

  20. Large area low-cost space solar cell development

    NASA Technical Reports Server (NTRS)

    Baraona, C. R.; Cioni, J. L.

    1982-01-01

    A development program to produce large-area (5.9 x 5.9 cm) space quality silicon solar cells with a cost goal of 30 $/watt is descibed. Five cell types under investigation include wraparound dielectric, mechanical wraparound and conventional contact configurations with combinations of 2 or 10 ohm-cm resistivity, back surface reflectors and/or fields, and diffused or ion implanted junctions. A single step process to cut cell and cover-glass simultaneously is being developed. A description of cell developments by Applied Solar Energy Corp., Spectrolab and Spire is included. Results are given for cell and array tests, performed by Lockheed, TRW and NASA. Future large solar arrays that might use cells of this type are discussed.