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Sample records for low-dimensional semiconductor structures

  1. Time-resolved spectroscopy of low-dimensional semiconductor structures

    NASA Astrophysics Data System (ADS)

    Murphy, Joseph R.

    This dissertation is a survey of ultrafast time-resolved optical measurements conducted on a variety of low-dimensional semiconductor systems to further the understanding of the dynamic behavior in the following systems: ZnMnTe/ZnSe quantum dots, ZnTe/ZnMnSe quantum dots, InGaAs quantum wells, CdMnSe colloidal quantum dots, multi-shell CdSe/CdMnS/CdS colloidal nanoplatelets, and graphene and graphene-related solutions and films. Using time-resolved photoluminescence to study epitaxially-grown ZnTe and ZnMnTe quantum dots in corresponding ZnMnSe and ZnSe matrices, the location dependence of manganese ions in respect to magnetic polaron formation is shown. The structure with manganese ions located in the matrix exhibited magnetic polaron behavior consistent with previous literature, whereas the structure with the magnetic ions located within the quantum dots exhibited unconventional magnetic polaron properties. These properties, including temperature and magnetic field insensitivity, were explained through the use of a model that predicted an increased internal magnetic field due to a decreased effective volume of the magnetic polaron and a higher effective temperature due to laser heating. Magneto-time-resolved photoluminescence measurements on a system of colloidal CdMnSe quantum dots show that the magnetic polaron properties differ significantly from the epitaxially grown quantum dots. First the timescales at which the magnetic polaron forms and the polarization saturates are different by more than an order of magnitude, and second, the magnetic polaron energy exhibited step-like behavior as the strength of the externally applied magnetic field is increased. The field dependent MP formation energy that is observed experimentally is explained as due to the breaking of the antiferromagnetic coupling of Mn dimers within the QDs. This model is further verified by the observation of quantized behavior in the Zeeman energy splitting. Through the use of magneto

  2. Correlation of Photocatalytic Activity with Band Structure of Low-dimensional Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Meng, Fanke

    Photocatalytic hydrogen generation by water splitting is a promising technique to produce clean and renewable solar fuel. The development of effective semiconductor photocatalysts to obtain efficient photocatalytic activity is the key objective. However, two critical reasons prevent wide applications of semiconductor photocatalysts: low light usage efficiency and high rates of charge recombination. In this dissertation, several low-dimensional semiconductors were synthesized with hydrothermal, hydrolysis, and chemical impregnation methods. The band structures of the low-dimensional semiconductor materials were engineered to overcome the above mentioned two shortcomings. In addition, the correlation between the photocatalytic activity of the low-dimensional semiconductor materials and their band structures were studied. First, we studied the effect of oxygen vacancies on the photocatalytic activity of one-dimensional anatase TiO2 nanobelts. Given that the oxygen vacancy plays a significant role in band structure and photocatalytic performance of semiconductors, oxygen vacancies were introduced into the anatase TiO2 nanobelts during reduction in H2 at high temperature. The oxygen vacancies of the TiO2 nanobelts boosted visible-light-responsive photocatalytic activity but weakened ultraviolet-light-responsive photocatalytic activity. As oxygen vacancies are commonly introduced by dopants, these results give insight into why doping is not always beneficial to the overall photocatalytic performance despite increases in absorption. Second, we improved the photocatalytic performance of two-dimensional lanthanum titanate (La2Ti2 O7) nanosheets, which are widely studied as an efficient photocatalyst due to the unique layered crystal structure. Nitrogen was doped into the La2Ti2O7 nanosheets and then Pt nanoparticles were loaded onto the La2Ti2O7 nanosheets. Doping nitrogen narrowed the band gap of the La2Ti 2O7 nanosheets by introducing a continuum of states by the valence

  3. The Physics of Low-dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Davies, John H.

    1997-12-01

    Low-dimensional systems have revolutionized semiconductor physics and had a tremendous impact on technology. Using simple physical explanations, with reference to examples from actual devices, this book introduces the general principles essential to low-dimensional semiconductors. The author presents a formalism that describes low-dimensional semiconductor systems, studying two key systems in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties have multiple applications in lasers and other opto-electronic devices. The book will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.

  4. Toward Ultrafast Spin Dynamics in Low Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Chiu, Yi-Hsin

    Since the discovery of long spin relaxation times of itinerant electrons up to 100 nanoseconds and spin diffusion lengths over 100 mum in GaAs, extraordinary advances in semiconductor spintronics have been made in the past one and half decades. Incorporating spins in semiconductors requires the following essential capabilities: (i) injection of spins into semiconductors, (ii) manipulation of spins, and (iii) sensitive detection of spin coherence. The solutions to these challenges lie in a deeper understanding of spin interactions and spin relaxation in semiconductors as well as appropriate tools to probe spin dynamics. In particular, recent experiments have suggested the important role of dimensionality in spin dynamics. For example, spin-orbit interaction, the dominant source of spin relaxation in most II-VI and III-V semiconductors, has been shown to be significantly suppressed in reduced dimensions. Low-dimensional semiconductors are therefore appealing candidates for exploring spin physics and device applications. This dissertation aims at exploring spin dynamics in low dimensional semiconductor systems using time-resolved optical techniques. The time resolution allows for a direct measurement of the equilibrium and non-equilibrium carrier spins and various spin interactions in the time domain. Optical approaches are also a natural fit for probing optically active nanostructures where electric approaches can often encounter challenges. For instance, fabricating electric contacts with nanostructures is a proven challenge because of their reduced size and modified electronic structure. This dissertation is divided into three sections targeting an ultimate goal of employing optical methods to explore spin dynamics in low dimensional semiconductors. First, the time-resolved Kerr rotation technique is employed to study spin relaxation in Fe/MgO/GaAs heterostructures. The results reveal rich interactions between the GaAs electron spins, nuclear spins, and the

  5. Tailoring low-dimensional organic semiconductor nanostructures.

    PubMed

    Treier, Matthias; Nguyen, Manh-Thuong; Richardson, Neville V; Pignedoli, Carlo; Passerone, Daniele; Fasel, Roman

    2009-01-01

    The quest for miniaturization of organic nanostructures is fueled by their possible applications in future nanoscale electronic devices. Here we show how a range of nanostructures of reduced dimensionality of the organic semiconductor PTCDA can be realized on Au(111) by intermixing the latter with hydrogen bonding spacer molecules. The purpose of the spacers is to separate nanounits of pure PTCDA, using hydrogen bonds between the anhydride end of PTCDA and amine groups of the spacers. A highly regular array of potential quantum dots can be realized by this approach. PMID:19143501

  6. Thermoelectric Transport in Bismuth Telluride Nanoplates, Semiconductor Nanowires, and Silicide Nanocomposites: Effects of Low Dimensionality, Surface States, Interface Structures, and Crystal Complexity

    NASA Astrophysics Data System (ADS)

    Shi, Li

    2012-02-01

    This presentation will review recent measurement results of thermoelectric properties of individual bismuth telluride nanoplates, semiconductor nanowires, and silicide nanocomposites. In experiments with these realistic nanostructured materials, a number of factors influence the transport properties. For example, unintentional doping, interface roughness and impurities can often obscure the predicted effects of the low-dimensional electronic density of states and the protected surface states, the latter of which have been suggested for bismuth telluride and other thermoelectric materials, now also referred as topological insulators. Similarly, impurities and defects as well as contact thermal resistance can play an important role in phonon transport in nanostructures, making it nontrivial to quantify the actual effects of phonon-surface scattering and other intriguing low-dimensional phonon transport phenomena. Because of these experimental complications, diverse theoretical interpretations of experimental results have appeared in the literature, and will be discussed. Moreover, the effects of twin defects and crystal complexity on thermoelectric transport in nanostructures will be examined based on measurement results of III-V and silicide nanostructures.

  7. Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Hung, Nguyen T.; Hasdeo, Eddwi H.; Nugraha, Ahmad R. T.; Dresselhaus, Mildred S.; Saito, Riichiro

    2016-07-01

    We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ , bulk semiconductors may give a higher power factor compared to the lower dimensional ones.

  8. Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.

    PubMed

    Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro

    2016-07-15

    We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones. PMID:27472126

  9. Optical power of semiconductor lasers with a low-dimensional active region

    SciTech Connect

    Asryan, Levon V.; Sokolova, Zinaida N.

    2014-01-14

    A comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser.

  10. Correlation of structural and electronic properties in a new low-dimensional form of mercury telluride.

    PubMed

    Carter, Robin; Sloan, Jeremy; Kirkland, Angus I; Meyer, Rüdiger R; Lindan, Phillip J D; Lin, Grace; Green, Malcolm L H; Vlandas, Alexis; Hutchison, John L; Harding, John

    2006-06-01

    Using high resolution electron microscopy and first principles quantum mechanical calculations we have explored the fundamental physics and chemistry of the semiconductor, HgTe grown inside single wall carbon nanotubes. This material forms a low-dimensional structure based on a repeating Hg2Te2 motif in which both atom species adopt new coordination geometries not seen in the bulk. Density-functional theory calculations confirm the stability of this structure and demonstrate conclusively that it arises solely as a consequence of constrained low dimensionality. This change is directly correlated with a modified electronic structure in which the low-dimensional form of HgTe is transformed from a bulk semimetal to a semiconductor. PMID:16803245

  11. Electron and Hole States in Low Dimensional Structures

    NASA Astrophysics Data System (ADS)

    Edwards, Gerard

    Available from UMI in association with The British Library. In this thesis results from microscopic calculations for the electron and hole states in low dimensional heterostructures are presented. The basis for the calculation is the local empirical pseudopotential technique which is used to generate the bulk semiconductor bandstructure. Then an S matrix approach, which is numerically stable, is employed to propagate the solution through the layered structure. The technique is essentially a scattering approach and hence is suitable to describe the experimental situation of finite samples. The fact that a finite system is treated allows the formalism to be naturally extended to include an external E field. The calculations that have been done are for the (001) growth direction. In chapter 1 the basic concepts of semiconductor physics relevant to the material of this thesis are introduced. In Chapter 2 the theoretical technique used in this thesis, for conduction band states, is reviewed and compared and contrasted with alternative methods. The emergence of miniband states and Stark ladders in coupled GaAs/AlAs quantum well structures are dealt with in chapter 3. In Chapter 4 the bound state problem, relevant to optical properties, of the energy versus k_parallel subband dispersion of a AlGaAs-GaAs-AlGaAs quantum well is examined. Chapter 5 contains the extension of the theoretical technique to incorporate the spin-orbit interaction so that heterostructure hole states can be tackled. The validity of the effective mass theory treatment of the semiconductor interface and the Luttinger model of the bulk valence band is questioned and the microscopic nature of the GaAs-AlAs interface scattering investigated. In chapter 6 hole states in GaAs/AlAs double barrier structures and coupled multiple quantum well (MQW) structures are calculated. The anomalous formation of contact interface states instead of heavy hole minibands is observed in MQW structures. In chapter 7 In

  12. Fabrication and characterization of low dimensional narrow energy gap semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Kang, Hyoung Ho

    In last decades, there has been a tremendous interest and a challenge to fabricate and characterize materials of nanoscale dimensions. Strong carrier confinement occurs in low dimensional systems showing different quantization regimes. These properties are being exploited for the fabrication of novel semiconductor devices. In this work, the fabrication and characterization of low dimensional narrow gap semiconductor heterostructures of 2-D InP/InAs quantum well/InP, 1-D Bi nanowires/mica and 0-D PbSe/PbEuTe quantum dot superlattice structures are presented. Stacking faults that are deleterious for the optical properties of heterostructures were observed in InP/InAs Q.W./InP (001) grown by ALE. A model for the formation of the stacking faults in InAs/InP heterostructures is proposed based on a transmission electron microscopy study. These faults were identified as Frank type faults and are believed to be responsible for the formation of tetrahedra or elongated hexahedra stacking faults. The density of stacking faults decreased as the InP cap layer thickness increased. Our investigation showed that the increase in stacking fault energy gives rise to annihilation of the faults as the cap layer thickness increases. Arrays of bismuth nanowires with diameter as small as 60 A on mica templates for the fabrication of thermoelectric devices were synthesized by a three-step process consisting of positive-ion irradiation, chemical etching and electrodeposition processes. The diameter and shape of the nanowires were controlled by the etching time. A single crystalline Bi wire with (012) in-plane orientation was observed by high resolution TEM and electron diffraction. The efficiency of electrodeposition of Bi wires was about 80%. N-doping of Bi wires by Te using electrodeposition was also demonstrated. The Te concentration was about 13 times higher than the concentration of Te in the solution. Ohmic behavior was observed across the doped Bi wires. The dot stacking arrangement

  13. Synergy between theory and experiment in structure resolution of low-dimensional oxides

    NASA Astrophysics Data System (ADS)

    Sierka, Marek

    2010-09-01

    In this paper, I review recent progress in joint theoretical and experimental studies aiming at atomic structure determination of low-dimensional metal oxides. Low-dimensional systems can be generally defined as materials of unusual structure that extend to less than three dimensions. In recent years low-dimensional systems have attracted increasing attention of physicists and chemists, and the interest is expected to rise in the near future. Two- and one-dimensional structures in form of thin oxide films or elongated oxide chains have many potential applications including model supports for heterogeneous catalysts and insulating layers in semiconductor industry. The interest in zero-dimensional gas-phase oxide clusters ranges from astrophysics to studies of elementary steps in catalysis. The key prerequisite for understanding physical and chemical properties of low-dimensional systems is a detailed knowledge of their atomic structures. However, such systems frequently present complex structures to solve. Only in a few cases experimental data can provide some information about possible arrangement of atoms, but data interpretation relies to a large extent on intuition. Therefore, in the recent years quantum chemical calculations became an indispensable tool in structure identification of low-dimensional systems, yet the accuracy of theoretical tools is often limited. The results reviewed here demonstrate that often the only way of an unambiguous atomic structure determination of low-dimensional systems are experimental studies combined with theoretical calculations. Particularly the global optimization methods such as genetic algorithm in combination with the density functional theory prove very useful in automatic structure determination of the observed surface structures and gas-phase clusters.

  14. Antitumor activity of low-dimensional alumina structures

    NASA Astrophysics Data System (ADS)

    Korovin, M. S.; Fomenko, A. N.

    2016-08-01

    Nano-dimensional materials have recently attracted much attention with respect to their potential role in medicine. Physical mechanisms of interaction of nanoparticles with tumor cells will help to develop new methods for cancer disease treatment. Based on aluminum oxide phases, positively charged low-dimensional structures have different shape: agglomerates of nanosheets, nameplates, cone-shaped nanoaggregates were synthesized with the help of aluminum nanoparticles. The cytotoxicity effect of these low-dimensional structures on A549, HeLa, MDA, PyMT tumor cells was studied. It was shown that agglomerates of nanosheets were more toxic for investigating cell lines. Agglomerates of nanosheets had a medium toxic effect at a concentration of 10 mg/ml while nameplates and cone-shaped nanoaggregates were nontoxic. The toxic effect of agglomerates of nanosheets correlates with their shape, mainly the presence of multiple edges.

  15. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    NASA Astrophysics Data System (ADS)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  16. Low-dimensional dynamics of structured random networks

    NASA Astrophysics Data System (ADS)

    Aljadeff, Johnatan; Renfrew, David; Vegué, Marina; Sharpee, Tatyana O.

    2016-02-01

    Using a generalized random recurrent neural network model, and by extending our recently developed mean-field approach [J. Aljadeff, M. Stern, and T. Sharpee, Phys. Rev. Lett. 114, 088101 (2015), 10.1103/PhysRevLett.114.088101], we study the relationship between the network connectivity structure and its low-dimensional dynamics. Each connection in the network is a random number with mean 0 and variance that depends on pre- and postsynaptic neurons through a sufficiently smooth function g of their identities. We find that these networks undergo a phase transition from a silent to a chaotic state at a critical point we derive as a function of g . Above the critical point, although unit activation levels are chaotic, their autocorrelation functions are restricted to a low-dimensional subspace. This provides a direct link between the network's structure and some of its functional characteristics. We discuss example applications of the general results to neuroscience where we derive the support of the spectrum of connectivity matrices with heterogeneous and possibly correlated degree distributions, and to ecology where we study the stability of the cascade model for food web structure.

  17. Low-dimensional boron structures based on icosahedron B12

    NASA Astrophysics Data System (ADS)

    Kah, C. B.; Yu, M.; Tandy, P.; Jayanthi, C. S.; Wu, S. Y.

    2015-10-01

    One-dimensional icosahedral boron chains and two-dimensional icosahedral boron sheets (icosahedral α, δ6, and δ4 sheets) that contain icosahedra B12 as their building units have been predicted in a computer simulation study using a state-of-the-art semi-empirical Hamiltonian. These novel low-dimensional icosahedral structures exhibit interesting bonding and electronic properties. Specifically, the three-center, two-electron bonding between icosahedra B12 of the boron bulk (rhombohedral boron) transforms into a two-center bonding in these new allotropes of boron sheets. In contrast to the previously reported stable buckled α and triangular boron monolayer sheets, these new allotropes of boron sheets form a planar network. Calculations of electronic density of states (DOS) reveal a semiconducting nature for both the icosahedral chain and the icosahedral δ6 and δ4 sheets, as well as a nearly gapless (or metallic-like) feature in the DOS for the icosahedral α sheet. The results for the energy barrier per atom between the icosahedral δ6 and α sheets (0.17 eV), the icosahedral δ6 and δ4 sheets (0.38 eV), and the icosahedral α and δ4 sheets (0.27 eV), as indicated in the respective parentheses, suggest that these new allotropes of boron sheets are relatively stable.

  18. Nanoscale control of low-dimensional spin structures in manganites

    NASA Astrophysics Data System (ADS)

    Jing, Wang; Iftikhar, Ahmed Malik; Renrong, Liang; Wen, Huang; Renkui, Zheng; Jinxing, Zhang

    2016-06-01

    Due to the upcoming demands of next-generation electronic/magnetoelectronic devices with low-energy consumption, emerging correlated materials (such as superconductors, topological insulators and manganites) are one of the highly promising candidates for the applications. For the past decades, manganites have attracted great interest due to the colossal magnetoresistance effect, charge-spin-orbital ordering, and electronic phase separation. However, the incapable of deterministic control of those emerging low-dimensional spin structures at ambient condition restrict their possible applications. Therefore, the understanding and control of the dynamic behaviors of spin order parameters at nanoscale in manganites under external stimuli with low energy consumption, especially at room temperature is highly desired. In this review, we collected recent major progresses of nanoscale control of spin structures in manganites at low dimension, especially focusing on the control of their phase boundaries, domain walls as well as the topological spin structures (e.g., skyrmions). In addition, capacitor-based prototype spintronic devices are proposed by taking advantage of the above control methods in manganites. This capacitor-based structure may provide a new platform for the design of future spintronic devices with low-energy consumption. Project supported by the National Basic Research Program of China (Grant No. 2014CB920902), the National Natural Science Foundation of China (Grant Nos. 61306105 and 51572278), the Information Science and Technology (TNList) Cross-discipline Foundation from Tsinghua National Laboratory, China and the Fund from the State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

  19. Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states.

    PubMed

    Bilc, Daniel I; Hautier, Geoffroy; Waroquiers, David; Rignanese, Gian-Marco; Ghosez, Philippe

    2015-04-01

    Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications. PMID:25884131

  20. On the current drive capability of low dimensional semiconductors: 1D versus 2D

    DOE PAGESBeta

    Zhu, Y.; Appenzeller, J.

    2015-10-29

    Low-dimensional electronic systems are at the heart of many scaling approaches currently pursuit for electronic applications. Here, we present a comparative study between an array of one-dimensional (1D) channels and its two-dimensional (2D) counterpart in terms of current drive capability. Lastly, our findings from analytical expressions derived in this article reveal that under certain conditions an array of 1D channels can outperform a 2D field-effect transistor because of the added degree of freedom to adjust the threshold voltage in an array of 1D devices.

  1. Polarizability evolution on natural and artificial low dimensional binary semiconductor systems: A case study of stoichiometric aluminum phosphide semiconductor clusters.

    PubMed

    Karamanis, Panaghiotis; Xenides, Demetrios; Leszczynski, Jerzy

    2008-09-01

    The dependences of the static dipole polarizabilities per atom (PPAs) on the bonding and shape of selected stoichiometric aluminum phosphide clusters (ground states and higher lying species) of small and medium sizes have been comprehensively studied at Hartree-Fock and the second order Moller-Plesset perturbation levels of theory. It is shown that the nonmonotonic size variations in the mean PPAs of AlP species which maintain closed cagelike structures, frequently observed in clusters, are directly related to covalent homoatomic bonds inside each cluster's framework. Accordingly, the PPAs of clusters which are characterized by one or more bonds between the Al and P atoms are larger than the PPAs of clusters with the uniform alternating Al-P bond matrix. This is caused by the electron transfer increase from the electropositive Al to the electronegative P atom with the cluster growth. This transfer is larger for the clusters characterized by alternating Al-P bonding. The later effect explains the decrease in the PPA of AlP species which maintain closed cage-like structures, with the cluster growth. However, this picture drastically changes for artificial metastable prolate species built up by the ground states of smaller clusters. It is demonstrated that for prolate binary AlP clusters of medium size, the shape dominates against any other structural or bonding factor, forcing the PPA to increase with the cluster size. Nonetheless, as the cluster size grows, it is predicted that the PPAs of the studied prolate clusters will saturate eventually with the cluster size. Also, it is verified that the theoretical predicted polarizabilities of AlP semiconductor clusters are larger than the bulk polarizability in accord with other theoretical predictions for similar systems. Lastly, it is pointed out that major bonding or structural changes should take place in order the convergence with the bulk polarizability to be accomplished since it is revealed that the size increase

  2. Bose-Einstein condensation in low dimensional layered structures

    NASA Astrophysics Data System (ADS)

    Salas, Patricia; Solis, M. A.

    2008-03-01

    Bose-Einstein condensation critical temperature, among other thermodynamic properties are reported for an ideal boson gas inside layered structures created by trapping potential of the Kronig-Penney type. We start with a big box where we introduce the Kronig-Penney potential in three directions to get a honey comb of cubes of side a size and walls of variable penetrability (P=mV0ab/^2), with bosons instead of bees. We are able to reduce the dimensions of the cubes to simulate bosons inside quantum dots. The critical temperature, starting from that of an ideal boson gas inside the big box, decreases as the small cube wall impenetrability increases arriving to a tiny but different from zero when the penetrability is zero (P-->∞). We also calculate the internal energy and the specific heat, and compare them to the ones obtained for the case of the same Kronig-Penney potential in one direction (simulating layers), and two directions (nanotubes).

  3. Control of polarization and dipole moment in low-dimensional semiconductor nanostructures

    SciTech Connect

    Li, L. H.; Ridha, P.; Mexis, M.; Smowton, P. M.; Blood, P.; Bozkurt, M.; Koenraad, P. M.; Patriarche, G.

    2009-11-30

    We demonstrate the control of polarization and dipole moment in semiconductor nanostructures, through nanoscale engineering of shape and composition. Rodlike nanostructures, elongated along the growth direction, are obtained by molecular beam epitaxial growth. By varying the aspect ratio and compositional contrast between the rod and the surrounding matrix, we rotate the polarization of the dominant interband transition from transverse-electric to transverse-magnetic, and modify the dipole moment producing a radical change in the voltage dependence of absorption spectra. This opens the way to the optimization of quantum dot amplifiers and electro-optical modulators.

  4. Entanglement dynamics of electron-electron scattering in low-dimensional semiconductor systems

    SciTech Connect

    Buscemi, F.; Bordone, P.; Bertoni, A.

    2006-05-15

    We perform the quantitative evaluation of the entanglement dynamics in scattering events between two indistinguishable electrons interacting via the Coulomb potential in one- and two-dimensional semiconductor nanostructures. We apply a criterion based on the von Neumann entropy and the Schmidt decomposition of the global state vector suitable for systems of identical particles. From the time-dependent numerical solution of the two-particle wave function of the scattering carriers we compute their entanglement evolution for different spin configurations: two electrons with the same spin, with different spin, and singlet and triplet spin states. The procedure allows us to evaluate the mechanisms that govern entanglement creation and their connection with the characteristic physical parameters and initial conditions of the system. The cases in which the evolution of entanglement is similar to the one obtained for distinguishable particles are discussed.

  5. Automatic classification of protein structures using low-dimensional structure space mappings

    PubMed Central

    2014-01-01

    Background Protein function is closely intertwined with protein structure. Discovery of meaningful structure-function relationships is of utmost importance in protein biochemistry and has led to creation of high-quality, manually curated classification databases, such as the gold-standard SCOP (Structural Classification of Proteins) database. The SCOP database and its counterparts such as CATH provide a detailed and comprehensive description of the structural and evolutionary relationships of the proteins of known structure and are widely employed in structural and computational biology. Since manual classification is both subjective and highly laborious, automated classification of novel structures is increasingly an active area of research. The design of methods for automated structure classification has been rendered even more important since the recent past, due to the explosion in number of solved structures arising out of various structural biology initiatives. In this paper we propose an approach to the problem of structure classification based on creating and tessellating low dimensional maps of the protein structure space (MPSS). Given a set of protein structures, an MPSS is a low dimensional embedding of structural similarity-based distances between the molecules. In an MPSS, a group of proteins (such as all the proteins in the PDB or sub-samplings thereof) under consideration are represented as point clouds and structural relatedness maps to spatial adjacency of the points. In this paper we present methods and results that show that MPSS can be used to create tessellations of the protein space comparable to the clade systems within SCOP. Though we have used SCOP as the gold standard, the proposed approach is equally applicable for other structural classifications. Methods In the proposed approach, we first construct MPSS using pairwise alignment distances obtained from four established structure alignment algorithms (CE, Dali, FATCAT and MATT). The low

  6. Spontaneous appearance of a low-dimensional magnetic electron system on semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Sawada, Keisuke; Iwata, Jun-Ichi; Oshiyama, Atsushi

    2016-06-01

    We report on the large-scale density-functional calculations that show the emergence of the spin-polarized ground states in nanofacets self-organized on SiC (0001) surfaces. We first reveal that the nanofacet formed by bunching of single bilayer steps induces peculiar electron states localized at but extended along step edges, showing the flat-band characteristics. The electron states are of C-dangling-bond characters mixed with the back-bond character of neighboring edge Si atoms. We find that the resulting flat bands lead to the spin polarization near the step edges by H passivation of the terrace Si atoms. Interestingly, either ferromagnetic or antiferromagnetic chains appear along the step edges on the SiC nanofacet and the location of such magnetic chains can be controlled by manipulating the H passivation of atoms near the step edges. These findings open a possibility of the appearance of new magnetic functions on the covalent semiconductor surfaces without magnetic elements.

  7. Harnessing Sparse and Low-Dimensional Structures for Robust Clustering of Imagery Data

    ERIC Educational Resources Information Center

    Rao, Shankar Ramamohan

    2009-01-01

    We propose a robust framework for clustering data. In practice, data obtained from real measurement devices can be incomplete, corrupted by gross errors, or not correspond to any assumed model. We show that, by properly harnessing the intrinsic low-dimensional structure of the data, these kinds of practical problems can be dealt with in a uniform…

  8. Indentation-induced formation of low-dimensional Si structures in KOH solution

    NASA Astrophysics Data System (ADS)

    Yang, Fuqian; Li, Ding

    2010-03-01

    Low-dimensional Si structures, including Si nanobelts and Si micropyramids, were formed on the surface of n-type silicon by microindentation and anisotropic etching in 30 wt% KOH solution at a temperature of 50 °C. The indentation was performed to create local plastic deformation and residual stresses. The residual stresses caused the formation of the Si nanobelts around the sites of indents on the surface of Si (1 1 1) and the Si micropyramids at the sites of indents on the surface of Si (1 0 0). The formation of the Si micropyramids was due to the local 'mask' created by the indentation and the residual stress around the indents. The residual hydrostatic stress at the tensile state increased the local etching rate, which resulted in a surface depression around the indents. The combination of indentation and wet etching process provides a maskless process to potentially produce low-dimensional Si structures in KOH solution at low temperatures.

  9. Structural features of low-dimensional molecular conductors-Representatives of new hybrid polyfunctional materials: Review

    SciTech Connect

    Shibaeva, R. P. Khasanov, S. S.; Zorina, L. V.; Simonov, S. V.

    2006-12-15

    The crystal structures of the family of low-dimensional molecular conductors based on radical cation salts of different organic {pi} donors with photochromic and magnetic metal complexes as anions have been considered. This class of supramolecular systems demonstrates a large variety of structural types and a wide range of transport properties. The specificity of the structure and properties of such hybrid materials is illustrated by several examples. The crystallochemical analysis of the conductors considered indicates the possibility of purposeful control of their transport properties via changing of the charge, sizes, shape, and symmetry of the anionic block components. The specificity of the crystal structure and properties of some organic conductors shows that such systems can be used as model systems in the study of new physical phenomena related to electron correlation and effects of charge ordering.

  10. Room temperature light emission from the low-dimensional semiconductors AZrPS{sub 6} ( A = K, Rb, Cs).

    SciTech Connect

    Banerjee, S.; Szarko, J. M.; Yuhas, B. D.; Malliakas, C. D.; Chen, L. X.; Kanatzidis, M. G.

    2010-03-29

    The new semiconducting thiophosphate compounds KZrPS{sub 6}, RbZrPS{sub 6}, and CsZrPS{sub 6} exhibit red light emission at room temperature. The materials have longer photoluminescence lifetimes than most of the inorganic chalcogenide semiconductors. They can be solution processed into thin films for potential device fabrication.

  11. Low Dimensional Tools for Flow-Structure Interaction Problems: Application to Micro Air Vehicles

    NASA Technical Reports Server (NTRS)

    Schmit, Ryan F.; Glauser, Mark N.; Gorton, Susan A.

    2003-01-01

    A low dimensional tool for flow-structure interaction problems based on Proper Orthogonal Decomposition (POD) and modified Linear Stochastic Estimation (mLSE) has been proposed and was applied to a Micro Air Vehicle (MAV) wing. The method utilizes the dynamic strain measurements from the wing to estimate the POD expansion coefficients from which an estimation of the velocity in the wake can be obtained. For this experiment the MAV wing was set at five different angles of attack, from 0 deg to 20 deg. The tunnel velocities varied from 44 to 58 ft/sec with corresponding Reynolds numbers of 46,000 to 70,000. A stereo Particle Image Velocimetry (PIV) system was used to measure the wake of the MAV wing simultaneously with the signals from the twelve dynamic strain gauges mounted on the wing. With 20 out of 2400 POD modes, a reasonable estimation of the flow flow was observed. By increasing the number of POD modes, a better estimation of the flow field will occur. Utilizing the simultaneously sampled strain gauges and flow field measurements in conjunction with mLSE, an estimation of the flow field with lower energy modes is reasonable. With these results, the methodology for estimating the wake flow field from just dynamic strain gauges is validated.

  12. Hot-carrier solar cells using low-dimensional quantum structures

    SciTech Connect

    Watanabe, Daiki; Kasamatsu, Naofumi; Harada, Yukihiro; Kita, Takashi

    2014-10-27

    We propose a high-conversion-efficiency solar cell (SC) utilizing the hot carrier (HC) population in an intermediate-band (IB) of a quantum dot superlattice (QDSL) structure. The bandgap of the host semiconductor in this device plays an important role as an energy-selective barrier for HCs in the QDSLs. According to theoretical calculation using the detailed balance model with an air mass 1.5 spectrum, the optimum IB energy is determined by a trade-off relation between the number of HCs with energy exceeding the conduction-band edge and the number of photons absorbed by the valence band−IB transition. Utilizing experimental data of HC temperature in InAs/GaAs QDSLs, the maximum conversion efficiency under maximum concentration (45 900 suns) has been demonstrated to increase by 12.6% as compared with that for a single-junction GaAs SC.

  13. Hot-carrier solar cells using low-dimensional quantum structures

    NASA Astrophysics Data System (ADS)

    Watanabe, Daiki; Kasamatsu, Naofumi; Harada, Yukihiro; Kita, Takashi

    2014-10-01

    We propose a high-conversion-efficiency solar cell (SC) utilizing the hot carrier (HC) population in an intermediate-band (IB) of a quantum dot superlattice (QDSL) structure. The bandgap of the host semiconductor in this device plays an important role as an energy-selective barrier for HCs in the QDSLs. According to theoretical calculation using the detailed balance model with an air mass 1.5 spectrum, the optimum IB energy is determined by a trade-off relation between the number of HCs with energy exceeding the conduction-band edge and the number of photons absorbed by the valence band-IB transition. Utilizing experimental data of HC temperature in InAs/GaAs QDSLs, the maximum conversion efficiency under maximum concentration (45 900 suns) has been demonstrated to increase by 12.6% as compared with that for a single-junction GaAs SC.

  14. Metal-Semiconductor Hybrid Aerogels: Evolution of Optoelectronic Properties in a Low-Dimensional CdSe/Ag Nanoparticle Assembly.

    PubMed

    Nahar, Lamia; Esteves, Richard J Alan; Hafiz, Shopan; Özgür, Ümit; Arachchige, Indika U

    2015-10-27

    Hybrid nanomaterials composed of metal-semiconductor components exhibit unique properties in comparison to their individual counterparts, making them of great interest for optoelectronic applications. Theoretical and experimental studies suggest that interfacial interactions of individual components are of paramount importance to produce hybrid electronic states. The direct cross-linking of nanoparticles (NPs) via controlled removal of the surfactant ligands provides a route to tune interfacial interactions in a manner that has not been thoroughly investigated. Herein, we report the synthesis of CdSe/Ag heteronanostructures (aerogels) via oxidation induced self-assembly of thiol-coated NPs and the evolution of optical properties as a function of composition. Three hybrid systems were investigated, where the first and second excitonic energies of CdSe were matched with plasmonic energy of Au or Ag NPs and Ag hollow NPs. Physical characterization of the aerogels suggests the presence of an interconnected network of hexagonal CdSe and cubic Ag NPs. The optical properties of hybrids were systematically examined through UV-vis, photoluminescence (PL), and time-resolved (TR) PL spectroscopic studies that indicate the generation of alternate radiative decay pathways. A new emission (640 nm) from CdSe/Ag aerogels emerged at Ag loading as low as 0.27%, whereas absorption band tailing and PL quenching effects were observed at higher Ag and Au loading, respectively. The TRPL decay time of the new emission (∼600 ns) is markedly different from those of the band-edge (1.83 ± 0.03 ns) and trap-state (1190 ± 120 ns) emission maxima of phase pure CdSe, supporting the existence of alternate radiative relaxation pathways in sol-gel derived CdSe/Ag hybrids. PMID:26389642

  15. EMRS Spring Meeting 2014 Symposium D: Phonons and fluctuations in low dimensional structures

    NASA Astrophysics Data System (ADS)

    2014-11-01

    The E-MRS 2014 Spring meeting, held from 26-30th May 2014 in Lille included the Symposium D entitled ''Phonons and Fluctuations in Low Dimensional Structures'', the first edition of its kind. The symposium was organised in response to the increasing interest in the study of phonons in the context of advances in condensed matter physics, electronics, experimental methods and theory and, in particular, the transfer of energy across atomic interfaces and the propagation of energy in the nm-scale. Steering heat by light or vice versa and examining nano-scale energy conversion (as in thermoelectricity and harvesting e.g. in biological systems) are two aspects that share the underlying science of energy processes across atomic interfaces and energy propagation in the nanoscale and or in confined systems. The nanometer scale defies several of the bulk relationships as confinement of electrons and phonons, locality and non-equilibrium become increasingly important. The propagation of phonons as energy carriers impacts not only heat transfer, but also the very concept and handling of temperature in non-equilibrium and highly localised conditions. Much of the needed progress depends on the materials studied and this symposium targeted the interface material aspects as well as the emerging concepts to advance in this field. The symposium had its origins in a series of meetings and seminars including: (1) the first Phonon Engineering Workshop, funded by Catalan Institute for Research and Advanced Studies (ICREA), the then MICINN, the CNRS, VTT, and several EU projects, held in Saint Feliu de Guixols (Girona, Spain) from 24th to 27th of May 2010 with 65 participants from Europe, the USA and Japan; (2) the first Phonons and Fluctuations workshop, held in Paris on 8th and 9th November 2010, supported by French, Spanish and Finnish national projects and EU projects, attended by about 50 researchers; (3) the second Phonon and Fluctuations workshop, held in Paris on 8th and 9th

  16. Quantitative MCsn+ - SIMS for direct compositional analysis of interfaces of low-dimensional structures

    NASA Astrophysics Data System (ADS)

    Chakraborty, Purushottam

    2012-06-01

    Excellent detection sensitivity, high dynamic range and good depth resolution make the Secondary ion Mass spectrometry (SIMS) technique extremely powerful for the chemical analysis of surfaces and interfaces of condensed matter systems. However, a serious problem in SIMS analysis is its "matrix effect" that hinders the quantification of a certain species in a sample and consequently, probing the composition of surfaces or interfaces by SIMS is greatly hindered. Appropriate corrective measures are therefore, needed to calibrate the secondary ion currents into respective concentrations for accurate compositional analysis. Working in the MCs+-SIMS mode (M - element to be analyzed, Cs+ - bombarding ions) can circumvent the matrix effect. The emission process for the species M0 is decoupled from the MCs+ ion formation process, in analogy with the ion formation in secondary neutral mass spectrometry (SNMS), resulting in a drastic decrease in matrix effect in the MCs+ - SIMS mode. Although this technique has found its applicability in direct quantification, it generally suffers from a low useful yield. In such cases, detection of MCsn+ (n = 2, 3, ...) molecular ions offers a better sensitivity (even by several orders of magnitude), as the yields of such molecular ion complexes have often been found to be higher than that of MCs+ ions. Several works have been reported on the emission of MCsn + molecular ions, but a complete understanding on the formation mechanisms of these ion complexes is still lacking. However, irrespective of the formation mechanisms, MCsn +-SIMS technique in all its complexities has great relevance in the elemental analysis of materials. The talk will address on the possible formation mechanisms and potential applications of MCsn+ molecular ion complexes in the interfacial analysis of ultrathin films, metallic multilayers, semiconductor superlattices, quantum structures and also in the compositional analysis of MBE grown Si1-xGex alloys.

  17. EMRS Spring Meeting 2014 Symposium D: Phonons and fluctuations in low dimensional structures

    NASA Astrophysics Data System (ADS)

    2014-11-01

    The E-MRS 2014 Spring meeting, held from 26-30th May 2014 in Lille included the Symposium D entitled ''Phonons and Fluctuations in Low Dimensional Structures'', the first edition of its kind. The symposium was organised in response to the increasing interest in the study of phonons in the context of advances in condensed matter physics, electronics, experimental methods and theory and, in particular, the transfer of energy across atomic interfaces and the propagation of energy in the nm-scale. Steering heat by light or vice versa and examining nano-scale energy conversion (as in thermoelectricity and harvesting e.g. in biological systems) are two aspects that share the underlying science of energy processes across atomic interfaces and energy propagation in the nanoscale and or in confined systems. The nanometer scale defies several of the bulk relationships as confinement of electrons and phonons, locality and non-equilibrium become increasingly important. The propagation of phonons as energy carriers impacts not only heat transfer, but also the very concept and handling of temperature in non-equilibrium and highly localised conditions. Much of the needed progress depends on the materials studied and this symposium targeted the interface material aspects as well as the emerging concepts to advance in this field. The symposium had its origins in a series of meetings and seminars including: (1) the first Phonon Engineering Workshop, funded by Catalan Institute for Research and Advanced Studies (ICREA), the then MICINN, the CNRS, VTT, and several EU projects, held in Saint Feliu de Guixols (Girona, Spain) from 24th to 27th of May 2010 with 65 participants from Europe, the USA and Japan; (2) the first Phonons and Fluctuations workshop, held in Paris on 8th and 9th November 2010, supported by French, Spanish and Finnish national projects and EU projects, attended by about 50 researchers; (3) the second Phonon and Fluctuations workshop, held in Paris on 8th and 9th

  18. From 1D chain to 3D network: A theoretical study on TiO2 low dimensional structures

    NASA Astrophysics Data System (ADS)

    Guo, Ling-ju; Zeng, Zhi; He, Tao

    2015-06-01

    We have performed a systematic study on a series of low dimensional TiO2 nanostructures under density functional theory methods. The geometries, stabilities, growth mechanism, and electronic structures of 1D chain, 2D ring, 2D ring array, and 3D network of TiO2 nanostructures are analyzed. Based on the Ti2O4 building unit, a series of 1D TiO2 nano chains and rings can be built. Furthermore, 2D ring array and 3D network nanostructures can be constructed from 1D chains and rings. Among non-periodic TiO2 chain and ring structures, one series of ring structures is found to be more stable. The geometry model of the 2D ring arrays and 3D network structures in this work has provided a theoretical understanding on the structure information in experiments. Based on these semiconductive low dimensional structures, moreover, it can help to understand and design new hierarchical TiO2 nanostructure in the future.

  19. From 1D chain to 3D network: A theoretical study on TiO{sub 2} low dimensional structures

    SciTech Connect

    Guo, Ling-ju; He, Tao; Zeng, Zhi

    2015-06-14

    We have performed a systematic study on a series of low dimensional TiO{sub 2} nanostructures under density functional theory methods. The geometries, stabilities, growth mechanism, and electronic structures of 1D chain, 2D ring, 2D ring array, and 3D network of TiO{sub 2} nanostructures are analyzed. Based on the Ti{sub 2}O{sub 4} building unit, a series of 1D TiO{sub 2} nano chains and rings can be built. Furthermore, 2D ring array and 3D network nanostructures can be constructed from 1D chains and rings. Among non-periodic TiO{sub 2} chain and ring structures, one series of ring structures is found to be more stable. The geometry model of the 2D ring arrays and 3D network structures in this work has provided a theoretical understanding on the structure information in experiments. Based on these semiconductive low dimensional structures, moreover, it can help to understand and design new hierarchical TiO{sub 2} nanostructure in the future.

  20. Semiconductor structure and devices

    NASA Technical Reports Server (NTRS)

    Dinkel, Nancy A. (Inventor); Goldstein, Bernard (Inventor); Ettenberg, Michael (Inventor)

    1987-01-01

    Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

  1. Semiconductor alloys - Structural property engineering

    NASA Technical Reports Server (NTRS)

    Sher, A.; Van Schilfgaarde, M.; Berding, M.; Chen, A.-B.

    1987-01-01

    Semiconductor alloys have been used for years to tune band gaps and average bond lengths to specific applications. Other selection criteria for alloy composition, and a growth technique designed to modify their structural properties, are presently considered. The alloys Zn(1-y)Cd(y)Te and CdSe(y)Te(1-y) are treated as examples.

  2. Hybrid ferromagnetic-semiconductor structures

    SciTech Connect

    Prinz, G.A. )

    1990-11-23

    Ultrahigh-vacuum growth techniques are now being used to grow single-crystal films of magnetic materials. These growth procedures, carried out in the same molecular beam epitaxy systems commonly used for the growth of semiconductor films, have yielded a variety of new materials and structures that may prove useful for integrated electronics and integrated optical device applications. Examples are given for growth on GaAs and ZnSe, including magnetic sandwiches and patterned structures. 14 refs., 9 figs.

  3. Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Chen, H.-H.; Su, S. H.; Chang, S.-L.; Cheng, B.-Y.; Chen, S. W.; Chen, H.-Y.; Lin, M.-F.; Huang, J. C. A.

    2015-06-01

    To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a structural transition from one-dimensional (1D) linear structures to two-dimensional (2D) triangular islands and such 2D growth mode is affected by the corrugated substrate. Upon Bi deposition, a little charge transfer occurs and a characteristic peak can be observed in the tunneling spectrum, reflecting the distinctive electronic structure of the Bi adatoms. When annealed to ~500 K, 2D triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. A well-controlled fabrication method is thus demonstrated. The approaches adopted herein provide perspectives for fabricating and characterizing periodic networks on MEG and related systems, which are useful in realizing graphene-based electronic, energy, sensor and spintronic devices.

  4. Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene

    PubMed Central

    Chen, H.-H.; Su, S. H.; Chang, S.-L.; Cheng, B.-Y.; Chen, S. W.; Chen, H.-Y.; Lin, M.-F.; Huang, J. C. A.

    2015-01-01

    To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a structural transition from one-dimensional (1D) linear structures to two-dimensional (2D) triangular islands and such 2D growth mode is affected by the corrugated substrate. Upon Bi deposition, a little charge transfer occurs and a characteristic peak can be observed in the tunneling spectrum, reflecting the distinctive electronic structure of the Bi adatoms. When annealed to ~500 K, 2D triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. A well-controlled fabrication method is thus demonstrated. The approaches adopted herein provide perspectives for fabricating and characterizing periodic networks on MEG and related systems, which are useful in realizing graphene-based electronic, energy, sensor and spintronic devices. PMID:26100604

  5. Semiconductor devices having a recessed electrode structure

    SciTech Connect

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  6. Effect of low-dimensional alumina structures on viability of L 929 cells

    SciTech Connect

    Fomenko, Alla N. Korovin, Matvey S. Bakina, Olga V. Kazantsev, Sergey O. Glazkova, Elena A. Svarovskaya, Natalia V. Lozhkomoev, Aleksandr S.

    2015-10-27

    In the study, we estimated the cytotoxicity of alumina nanoparticles differing in shape (nanofibers, nanoplates, nanosheets, agglomerates of nanosheets) and close in physicochemical properties (particle size, specific surface area, phase composition, and zeta potential). The alumina structures were characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray diffraction (XRD) data, low-temperature nitrogen adsorption, and dynamic light scattering (DLS). The cytotoxicity was estimated on fibroblast cells of the L929 line. It was found that a more adverse effect on the cells was exerted by alumina nanofibers and nanosheets. The action of nanosheets on the cells was inhibitory and was of about the same level, irrespective of the observation period. The effect of alumina nanosheet agglomerates and nanoplates on the cell proliferation was weak even at an exposure time of 72 h.

  7. Structure and dynamics in low-dimensional guest-host systems

    SciTech Connect

    Fischer, J.E. . Dept. of Materials Science)

    1992-04-01

    New synthetic materials continue to be discovered at a rapid rate. Many of these can be broadly described as guest-host systems, in the sense that a range of compositions is accessible by selectively inserting heteroatoms or molecules into the interstitial sites in an otherwise pure starting material. The premier examples are layer intercalates (graphite, transition metal di- and trichalocogenides, silicate clays) and doped polymers (notably polyacetylene). With a somewhat broader definition of intercaiation, one might include the high-{Tc} cuprate superconductors (variable oxygen and alkaline earth concentrations), ion-exchanged beta-alumina and related defect oxides, and alkali metal-doped buckminsterfullerene (C{sub 60}). The interest in these material families for energy applications is directly attributable to the guest-in-a-host feature, either by exploiting guest ion mobility in electrochemical devices or by tuning/optimizing properties via control of guest concentration and sublattice structure. This document is a progress report covering the first 25 months (6/89 to 7/91) of the present 3-year period. Part IV describes the proposed research 6/1/92--5/31/95.

  8. Magnetic field-dependent electronic structures of low-dimensional organic materials

    NASA Astrophysics Data System (ADS)

    Graf, David E.

    Organic systems provide the opportunity to study physics in lower dimensions. Rather than interactions between atomic sites, organic systems are comprised of molecules with the general shape of flat bricks. The stacking of these bricks produces a wide variety of structures with equally diverse ground states. The tau-phase molecular conductors are comprised of the asymmetric DMEDT-TTF molecule. These donors are arranged into a grid-like pattern to create two-dimensional planes of high conductivity. Materials based on stacks of perylene (Per) donor molecules have a conductivity anisotropy which makes them effectively one-dimensional and therefore susceptible to lattice instabilities. Systematic studies of both materials are reported in this dissertation. The donor molecules of the tau-phase systems, tau-(P-(S,S)-DMEDT-TTF) 2(AuBr2)1+y and tau-(EDO-(S,S)-DMEDT-TTF) 2(AuBr2)1+y, only differ by the substitution of nitrogen for oxygen yet measurements reveal vastly different results. Measurements of magnetoresistance reveal metallic character in increasing magnetic fields followed by a rapid transition to a bulk insulator, followed by a large hysteresis as the material returns to a metal as the field returns to zero. Comparison between the above mentioned systems for magnetization and pressure dependence suggest a weakly coupled lattice for the nitrogen-based material, which distorts in high fields. With transition temperatures of 8 K and 12 K for (Per)2Pt(mnt) 2 and (Per)2Au(mnt)2, respectively, readily available fields are capable of producing large changes in the low temperature, charge density wave (CDW) states of the systems. When the Au metal sites within the anion chains are replaced with Pt (S = ½), magnetism is introduced to the system. When (Per)2Pt(mnt)2 is subjected to increasing fields beyond ˜ 20 T, the conventional CDW is suppressed and a new density wave state is formed in high fields. Further measurements have been performed observing the change is the

  9. Low-dimensional optics

    NASA Astrophysics Data System (ADS)

    Flory, François; Escoubas, Ludovic; Le Rouzo, Judikaël; Berginc, Gerard; Lee, Cheng-Chung

    2015-01-01

    Thanks to progress in material science and nanotechnologies, surfaces and thin films can now be structured at different scales. Photonics components take advantage of this possibility to fulfill still more and more complex functions. They are composed of organic and inorganic materials, dielectrics, semiconductors, and metallic materials, or a mixture of them. Multiscale and chiral structures can be used to control both spectral and spatial distributions of light together with its polarization state. The optical mode density in the near field and in the far field can then be designed in particular by combining more or less resonant structures for the optical waves, associating diffraction, interferences, and anisotropic structures like Fabry-Perot, waveguide, plasmons, and photonic crystals. Artificially nanostructured materials, often called metamaterials, exhibit new properties. Different phenomena, including optical topological insulator and structures for vortex waves transporting angular momentum of photons, are discussed and illustrated. With the development of nanometer size structures, another step is taken toward allowing control of the intimate interaction of optical waves with materials to tune their basic electronic properties and permittivity. Both optical and electronic properties are also strongly dependent on coupling effects and need a global approach.

  10. Low dimensional optics

    NASA Astrophysics Data System (ADS)

    Flory, F.; Escoubas, Ludovic; Le Rouzo, J.; Berginc, G.; Lee, C. C.

    2014-08-01

    Thanks to progresses in material science and nanotechnologies, surfaces and thin films can now be structured at different scales. Photonics components take benefit of this possibility to fulfill still more and more complex functions. They are composed as well of organic as inorganic materials, dielectric, semiconductor, and metallic materials, or a mixture of them. Multiscale and chiral structures can be used to control both spectral, spatial distribution of light together with its polarization state. The optical mode density in the near field and in the far field can then be designed in particular by combining more or less resonant structures for the optical waves, associating diffraction, interferences and anisotropic structures like Fabry-Perot, waveguide, plasmons, photonic crystals ... Artificially nanostructured materials often called metamaterials exhibit new properties. Different phenomena recently considered, including optical topological insulator and structures for vortex waves transporting angular momentum of photons, will be also discussed and illustrated. With the development of nanometer size structures another step is overtaken allowing the control of the intimate interaction of optical waves with materials to tune their basic electronic properties and permittivity. Both optical and electronic properties are also strongly dependent on coupling effects needing a global approach.

  11. Uniform Descriptions of Electron-IO Phonon Interaction in Structures of Multi-layer Coupling Low-dimensional Systems

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Shi, Jun-Jie

    2005-07-01

    By using the transfer matrix method, within the framework of the dielectric continuum approximation, uniform forms for the interface optical (IO) phonon modes as well as the corresponding electron-IO phonon interaction Hamiltonians in n-layer coupling low-dimensional systems (including the coupling quantum well (CQW), coupling quantum-well wire (CQWW), and coupling quantum dot (CQD)) have been presented. Numerical calculations on the three-layer asymmetrical AlGaAs/GaAs systems are performed, and the analogous characteristics for limited frequencies of IO phonon in the three types of systems (CQW, CQWW, and CQD) when the wave-vector and the quantum number approach zero or infinity are analyzed and specified. The project supported by National Natural Science Foundation of China under Grant Nos. 60276004 and 60390073, the Scientific Research Foundation for the Returned Overseas Chinese Scholars, the Ministry of Education of China and the Natural Science Foundation of Guangzhou Education Bureau under Grant No. 2060

  12. Band structure engineering in organic semiconductors.

    PubMed

    Schwarze, Martin; Tress, Wolfgang; Beyer, Beatrice; Gao, Feng; Scholz, Reinhard; Poelking, Carl; Ortstein, Katrin; Günther, Alrun A; Kasemann, Daniel; Andrienko, Denis; Leo, Karl

    2016-06-17

    A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors. PMID:27313043

  13. PREFACE: Dynamics of low-dimensional systems Dynamics of low-dimensional systems

    NASA Astrophysics Data System (ADS)

    Bernasconi, M.; Miret-Artés, S.; Toennies, J. P.

    2012-03-01

    With the development of techniques for high-resolution inelastic helium atom scattering (HAS), electron scattering (EELS) and neutron spin echo spectroscopy, it has become possible, within approximately the last thirty years, to measure the dispersion curves of surface phonons in insulators, semiconductors and metals. In recent years, the advent of new experimental techniques such as 3He spin-echo spectroscopy, scanning inelastic electron tunnel spectroscopy, inelastic x-ray scattering spectroscopy and inelastic photoemission have extended surface phonon spectroscopy to a variety of systems. These include ultra-thin metal films, adsorbates at surface and elementary processes where surface phonons play an important role. Other important directions have been actively pursued in the past decade: the dynamics of stepped surfaces and clusters grown on metal surfaces, due to their relevance in many dynamical and chemical processes at surfaces, including heterogeneous catalysis; clusters; diffusion etc. The role of surface effects in these processes has been conjectured since the early days of surface dynamics, although only now is the availability of ab initio approaches providing those conjectures with a microscopic basis. Last but not least, the investigation of non-adiabatic effects, originating for instance from the hybridization (avoided crossing) of the surface phonons branches with the quasi 1D electron-hole excitation branch, is also a challenging new direction. Furthermore, other elementary oscillations such as surface plasmons are being actively investigated. The aforementioned experimental breakthroughs have been accompanied by advances in the theoretical study of atom-surface interaction. In particular, in the past decade first principles calculations based on density functional perturbation theory have boosted the theoretical study of the dynamics of low-dimensional systems. Phonon dispersion relations of clean surfaces, the dynamics of adsorbates, and the

  14. Method of transferring strained semiconductor structure

    DOEpatents

    Nastasi, Michael A.; Shao, Lin

    2009-12-29

    The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

  15. Local structure and lattice dynamics study of low dimensional materials using atomic pair distribution function and high energy resolution inelastic x-ray scattering

    NASA Astrophysics Data System (ADS)

    Shi, Chenyang

    Structure and dynamics lie at the heart of the materials science. A detailed knowledge of both subjects would be foundational in understanding the materials' properties and predicting their potential applications. However, the task becomes increasingly dicult as the particle size is reduced to the nanometer scale. For nanostructured materials their laboratory x-ray scattering patterns are overlapped and broadened, making structure determination impossible. Atomic pair distribution function technique based on either synchrotron x-ray or neutron scattering data is known as the tool of choice for probing local structures. However, to solve the "structure problem" in low-dimensional materials with PDF is still challenging. For example for 2D materials of interest in this thesis the crystallographic modeling approach often yields unphysical thermal factors along stacking direction where new chemical intuitions about their actual structures and new modeling methodology/program are needed. Beyond this, lattice dynamical investigations on nanosized particles are extremely dicult. Laboratory tools such as Raman and infra-red only probe phonons at Brillouin zone center. Although in literature there are a great number of theoretical studies of their vibrational properties based on either empirical force elds or density functional theory, various approximations made in theories make the theoretical predictions less reliable. Also, there lacks the direct experiment result to validate the theory against. In this thesis, we studied the structure and dynamics of a wide variety of technologically relevant low-dimensional materials through synchrotron based x-ray PDF and high energy resolution inelastic x-ray scattering (HERIX) techniques. By collecting PDF data and employing advanced modeling program such as DiPy-CMI, we successfully determined the atomic structures of (i) emerging Ti3C2, Nb4C3 MXenes (transition metal carbides and/or nitrides) that are promising for energy storage

  16. Mott metal-insulator transition induced by utilizing a glasslike structural ordering in low-dimensional molecular conductors

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Müller, Jens; Sasaki, Takahiko

    2014-11-01

    We utilize a glasslike structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt κ -(BEDT-TTF)2Cu [N (CN)2Br ]. In this material, the terminal ethylene groups of the BEDT-TTF molecules can adopt two different structural orientations within the crystal structure, namely eclipsed (E) and staggered (S) with the relative orientation of the outer C-C bonds being parallel and canted, respectively. These two conformations are thermally disordered at room temperature and undergo a glasslike ordering transition at Tg˜75 K. When cooling through Tg, a small fraction that depends on the cooling rate remains frozen in the S configuration, which is of slightly higher energy, corresponding to a controllable degree of structural disorder. We demonstrate that, when thermally coupled to a low-temperature heat bath, a pulsed heating current through the sample causes a very fast relaxation with cooling rates at Tg of the order of several 1000 K /min . The freezing of the structural degrees of freedom causes a decrease of the electronic bandwidth W with increasing cooling rate, and hence a Mott metal-insulator transition as the system crosses the critical ratio (W/U ) c of bandwidth to on-site Coulomb repulsion U . Due to the glassy character of the transition, the effect is persistent below Tg and can be reversibly repeated by melting the frozen configuration upon warming above Tg. Both by exploiting the characteristics of slowly changing relaxation times close to this temperature and by controlling the heating power, the materials can be fine-tuned across the Mott transition. A simple model allows for an estimate of the energy difference between the E and S state as well as the accompanying degree of frozen disorder in the population of the two orientations.

  17. Structure and dynamics in low-dimensional guest-host systems. Progress report, June 1, 1990--May 31, 1992

    SciTech Connect

    Fischer, J.E.

    1992-04-01

    New synthetic materials continue to be discovered at a rapid rate. Many of these can be broadly described as guest-host systems, in the sense that a range of compositions is accessible by selectively inserting heteroatoms or molecules into the interstitial sites in an otherwise pure starting material. The premier examples are layer intercalates (graphite, transition metal di- and trichalocogenides, silicate clays) and doped polymers (notably polyacetylene). With a somewhat broader definition of intercaiation, one might include the high-{Tc} cuprate superconductors (variable oxygen and alkaline earth concentrations), ion-exchanged beta-alumina and related defect oxides, and alkali metal-doped buckminsterfullerene (C{sub 60}). The interest in these material families for energy applications is directly attributable to the guest-in-a-host feature, either by exploiting guest ion mobility in electrochemical devices or by tuning/optimizing properties via control of guest concentration and sublattice structure. This document is a progress report covering the first 25 months (6/89 to 7/91) of the present 3-year period. Part IV describes the proposed research 6/1/92--5/31/95.

  18. Light amplification in semiconductor-superconductor structures

    NASA Astrophysics Data System (ADS)

    Marjieh, Raja; Sabag, Evyatar; Hayat, Alex

    2016-02-01

    We study a new effect of Cooper-pair-based two-photon gain in semiconductor-superconductor structures, showing broadband enhancement of ultrafast two-photon amplification. We further show that with the superconducting enhancement, at moderately high seed intensities, the two-photon gain contribution approaches that of the one-photon gain. A full quantum-optical model of singly- and fully-stimulated two-photon emission is developed. Our results provide new insights on nonlinear light-matter interaction in the superconducting state, including the possibility of coherent control in two-photon semiconductor-superconductor devices. The theoretically-demonstrated effects can have important implications in optoelectronics and in coherent-control applications.

  19. Metallic behavior in low-dimensional honeycomb SiB crystals: A first-principles prediction of atomic structure and electronic properties

    NASA Astrophysics Data System (ADS)

    Hansson, Anders; de Brito Mota, F.; Rivelino, Roberto

    2012-11-01

    We present a detailed analysis of the atomic and electronic structure of a two-dimensional monolayer of boron and silicon elements within periodic density functional theory. The proposed h-SiB sheet is a structural analog of hexagonal boron nitride (h-BN) and exhibits a good structural stability, compared to the structure of silicene. The calculated cohesive energy of an infinite sheet of h-SiB is of 4.71 eV/atom, whereas the corresponding value for silicene is 4.09 eV/atom. However, h-SiB sheets are not able to be stacked into a three-dimensional graphitelike structure, leading to a new hexagonal phase. On the other hand, h-SiB is predicted to roll up into single-walled silicon boron nanotubes (SWSiBNTs) of which we examine the electronic properties of some zigzag and armchair tubes. The strain energy of the SWSiBNTs are four to five times lower than the strain energy of the corresponding carbon nanotubes. In contrast to more polar honeycomb monolayers, the h-SiB sheet is not semiconducting or semimetallic. It has a delocalized charge density like graphene, but the π band and the two highest occupied σ bands are only partly filled. This results in a high density of states around the Fermi level and a metallic behavior of the h-SiB sheet. Interestingly, all the low-dimensional h-SiB-based structures, including the smallest to the largest stable tubes studied here, are predicted to form metallic systems.

  20. Semiconductor structures for repeated velocity overshoot

    NASA Astrophysics Data System (ADS)

    Cooper, J. A., Jr.; Capasso, F.; Thornber, K. K.

    1982-12-01

    The conditions required for obtaining repeated velocity overshoot in semiconductors are discussed. Two classes of structures that provide these conditions are considered. The structures are seen as holding promise for achieving average drift velocities well in excess of the maximum steady-state velocity over distances ranging from submicron to tens of microns. In structures of the first class, the stairstep in potential is achieved by using a graded bandgap that is similar to the avalanche photodetector described by Williams et al. (1982), where the composition is graded from GaAs to Al(0.2)Ga(0.8)As. The second class of structures uses alternating planar doped charge sheets, as described by Malik et al. (1980).

  1. The structure and morphology of semiconductor nanocrystals

    SciTech Connect

    Kadavanich, A V

    1997-11-01

    Colloidal semiconductor nanocrystals were studied using High Resolution Transmission Electron Microscopy (HRTEM). Organically capped nanocrystals were found to have faceted shapes consistent with Wulff polyhedra after the effects of capping ligands on surface energies were taken into account. The basic shape thus derived for wurtzite (WZ) structure CdSe nanocrystals capped by tri-octyl phosphine oxide (TOPO) was a truncated hexagonal prism, elongated alone the <001> axis with (100) and (002) facets. This structure has C{sub 3v} point group symmetry. The main defect in this structure is a stacking fault (a single layer of zinc blende type stacking), which does not significantly affect the shape (does not alter the point group).

  2. Low dimensional magnetism

    NASA Astrophysics Data System (ADS)

    Kjall, Jonas Alexander

    quantum Hall phases for bosons can be obtained, and the phases nu = 1/2 and nu = 2/3 have the edge spectra predicted by the chiral Luttinger liquid theory. Also, some of the traditional experimental techniques for detecting magnetic order and dynamics in solid state materials, like neutron scattering has had somewhat of a renaissance lately. In a recent experiment on CoNb2O 6, Coldea et. al. found for the first time experimental evidence of the exceptional Lie algebra E8. The emergence of this symmetry was theoretically predicted long ago for the transverse quantum Ising chain in the presence of a weak longitudinal field. We consider an accurate microscopic model of CoNb2O6 incorporating additional couplings and calculate numerically the dynamical structure function using a recently developed matrix-product-state method. The excitation spectra show bound states characteristic of the weakly broken E8 symmetry. We compare the observed bound state signatures in this model to those found in the transverse Ising chain in a longitudinal field and to experimental data. Finally, we investigate the ground state phase diagram of a related quantum spin chain, the S = 2 XXZ chain with single-ion anisotropy. The interest in this system comes mainly from connecting the highly quantum mechanical spin-1 phase diagram with the classical S = infinity phase diagram. While most of these questions where believed to have been satisfactorily answered mainly with DMRG, some recent studies have questioned some of the conclusions. We use several of the recent advances within DMRG and perform a detailed analysis of the whole phase diagram. We extend the phase diagram by considering different types of single ion anisotropies which help us to answer two important questions: First we show that one can adiabatically move from the isotropic Heisenberg point to the so-called large-D phase with a continuous change of the Hamiltonian. Second, we can tune the model into a predicted intermediate phase which

  3. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    NASA Astrophysics Data System (ADS)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  4. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    DOEpatents

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  5. Physics of low-dimensional systems

    SciTech Connect

    Not Available

    1989-01-01

    The physics of low-dimensional systems has developed in a remarkable way over the last decade and has accelerated over the last few years, in particular because of the discovery of the new high temperature superconductors. The new developments started more than fifteen years ago with the discovery of the unexpected quasi-one-dimensional character of the TTF-TCNQ. Since then the field of conducting quasi-one-dimensional organic system have been rapidly growing. Parallel to the experimental work there has been an important theoretical development of great conceptual importance, such as charge density waves, soliton-like excitations, fractional charges, new symmetry properties etc. A new field of fundamental importance was the discovery of the Quantum Hall Effect in 1980. This field is still expanding with new experimental and theoretical discoveries. In 1986, then, came the totally unexpected discovery of high temperature superconductivity which started an explosive development. The three areas just mentioned formed the main themes of the Symposium. They do not in any way exhaust the progress in low-dimensional physics. We should mention the recent important development with both two-dimensional and one-dimensional and even zero-dimensional structures (quantum dots). The physics of mesoscopic systems is another important area where the low dimensionality is a key feature. Because of the small format of this Symposium we could unfortunately not cover these areas.

  6. Quasibound states in semiconductor quantum well structures

    NASA Astrophysics Data System (ADS)

    Rihani, Samir; Page, Hideaki; Beere, Harvey E.

    2010-02-01

    We present a study on quasibound states in multiple quantum well structures using a finite element model (FEM). The FEM is implemented for solving the effective mass Schrödinger equation in arbitrary layered semiconductor nanostructures with an arbitrary applied potential. The model also includes nonparabolicity effects by using an energy dependent effective mass, where the resulting nonlinear eigenvalue problem was solved using an iterative approach. We focus on quasibound/continuum states above the barrier potential and show that such states can be determined using cyclic boundary conditions. This new method enables the determination of both bound and quasibound states simultaneously, making it more efficient than other methods where different boundary conditions have to be used in extracting the relevant states. Furthermore, the new method lifted the problem of quasibound state divergence commonly seen with many other methods of calculation. Hence enabling accurate determination of dipole matrix elements involving both bound and quasibound states. Such calculations are vital in the design of intersubband optoelectronic devices and reveal the interesting properties of quasibound states above the potential barriers.

  7. PREFACE: Dynamics of low-dimensional systems Dynamics of low-dimensional systems

    NASA Astrophysics Data System (ADS)

    Bernasconi, M.; Miret-Artés, S.; Toennies, J. P.

    2012-03-01

    With the development of techniques for high-resolution inelastic helium atom scattering (HAS), electron scattering (EELS) and neutron spin echo spectroscopy, it has become possible, within approximately the last thirty years, to measure the dispersion curves of surface phonons in insulators, semiconductors and metals. In recent years, the advent of new experimental techniques such as 3He spin-echo spectroscopy, scanning inelastic electron tunnel spectroscopy, inelastic x-ray scattering spectroscopy and inelastic photoemission have extended surface phonon spectroscopy to a variety of systems. These include ultra-thin metal films, adsorbates at surface and elementary processes where surface phonons play an important role. Other important directions have been actively pursued in the past decade: the dynamics of stepped surfaces and clusters grown on metal surfaces, due to their relevance in many dynamical and chemical processes at surfaces, including heterogeneous catalysis; clusters; diffusion etc. The role of surface effects in these processes has been conjectured since the early days of surface dynamics, although only now is the availability of ab initio approaches providing those conjectures with a microscopic basis. Last but not least, the investigation of non-adiabatic effects, originating for instance from the hybridization (avoided crossing) of the surface phonons branches with the quasi 1D electron-hole excitation branch, is also a challenging new direction. Furthermore, other elementary oscillations such as surface plasmons are being actively investigated. The aforementioned experimental breakthroughs have been accompanied by advances in the theoretical study of atom-surface interaction. In particular, in the past decade first principles calculations based on density functional perturbation theory have boosted the theoretical study of the dynamics of low-dimensional systems. Phonon dispersion relations of clean surfaces, the dynamics of adsorbates, and the

  8. Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

    PubMed Central

    Yu, Chongqi; Wang, Hui

    2010-01-01

    The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures. PMID:22163463

  9. Low Dimensional Nanomaterials for Spintronics

    NASA Astrophysics Data System (ADS)

    Yang, Jinlong; Xiang, Hongjun

    Moore's Law in microelectronic technology will break down as the size of individual bits approaches the dimension of atoms; this has been called the end of the silicon road map. For this reason and also for enhancing the multifunctionality of devices, the spin degree of freedom of electron is being investigated for magnetoelectronics applications, i.e., spintronics. Spin-based devices are closely connected with the development of nanotechnology. In this chapter, recent developments of the low-dimensional nanomaterials for spintronics are reviewed. In the first section, the main concepts of spintronics including nanospintronics are briefly discussed. Experimental studies on transition-metal-doped nanowires and nanotubes are summarized in the second section. Extensive theoretical works in this field are reviewed in the third section. Finally, an outlook is given in the last section.

  10. Metal oxide semiconductor structure using oxygen-terminated diamond

    NASA Astrophysics Data System (ADS)

    Chicot, G.; Maréchal, A.; Motte, R.; Muret, P.; Gheeraert, E.; Pernot, J.

    2013-06-01

    Metal-oxide-semiconductor structures with aluminum oxide as insulator and p-type (100) mono-crystalline diamond as semiconductor have been fabricated and investigated by capacitance versus voltage and current versus voltage measurements. The aluminum oxide dielectric was deposited using low temperature atomic layer deposition on an oxygenated diamond surface. The capacitance voltage measurements demonstrate that accumulation, depletion, and deep depletion regimes can be controlled by the bias voltage, opening the route for diamond metal-oxide-semiconductor field effect transistor. A band diagram is proposed and discussed.

  11. Two-mode dynamics in different semiconductor laser structures

    NASA Astrophysics Data System (ADS)

    Scirè, Alessandro; Sorel, Marc; Colet, Pere; Tessone, Claudio Juan; Mirasso, Claudio R.; San Miguel, Maxi

    2006-04-01

    We review three two-mode models for different semiconductor laser structures: Vertical-Cavity Surface-Emitting Lasers (VCSELs), Twin-Stripe Semiconductor-Lasers (TSSL), and Semiconductor Ring Lasers (SRL). The VCSELs model and TSSL model display rich dynamic behavior when a saturable absorber is embedded in the cavity. VCSELs with saturable absorber showed polarization chaos, which found applications in encoded communications; TSSLs with saturable absorber show coherent locked states as well as chaotic behavior; and SRLs show a complex two-mode dynamics giving rise to bidirectional operation, alternate oscillations and spontaneous symmetry breaking toward quasi-unidirectional bistable solutions, with potential applications to all-optical switching.

  12. Interface Structure of MoO3 on Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    White, Robin T.; Thibau, Emmanuel S.; Lu, Zheng-Hong

    2016-02-01

    We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces at various stages of MoO3 deposition on these organic semiconductor surfaces. For the interface physical structure, it is found that MoO3 diffuses into the underlying organic layer, exhibiting a trend of increasing diffusion with decreasing molecular molar mass. For the interface chemical structure, new carbon and molybdenum core-level states are observed, as a result of interfacial electron transfer from organic semiconductor to MoO3. For the interface electronic structure, energy level alignment is observed in agreement with the universal energy level alignment rule of molecules on metal oxides, despite deposition order inversion.

  13. Printable semiconductor structures and related methods of making and assembling

    DOEpatents

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2013-03-12

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  14. Printable semiconductor structures and related methods of making and assembling

    DOEpatents

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2010-09-21

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  15. Printable semiconductor structures and related methods of making and assembling

    DOEpatents

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2011-10-18

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  16. Structure-property relationships in semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Sher, A.; Berding, M. A.; Krishnamurthy, S.; Van Schilfgaarde, M.; Chen, A.-B.

    1987-01-01

    It is presently noted that the atomic distribution of constituents in semiconductor alloys is never truly random, since there are always interactions giving rise to correlations whose degree and character depend on which interactions are dominant, as well as on the growth conditions. Although most of the interactions that can be expected to generate correlations have been identified, the fact that not all have been thus far treated exhaustively leaves several details unclear. A characterization of the primary effects in general terms is accordingly achieved.

  17. Local structure determination in strained-layer semiconductors

    NASA Astrophysics Data System (ADS)

    Woicik, Joseph C.

    The theory of elasticity accurately describes the deformations of macroscopic bodies under the action of applied stress [1]. In this review, we examine the internal mechanisms of elasticity for strained-layer semiconductor heterostructures. In particular, we present extended x-ray-absorption fine structure (EXAFS) and x-ray diffraction (XRD) measurements to show how the bond lengths and bond angles in semiconductor thin-alloy films change with strain when they are grown coherently on substrates with different lattice constants. The structural distortions measured by experiment are compared to valence-force field (VFF) calculations and other theoretical models. Atomic switching and interfacial strain at buried interfaces are also discussed.

  18. Screenable contact structure and method for semiconductor devices

    DOEpatents

    Ross, Bernd

    1980-08-26

    An ink composition for deposition upon the surface of a semiconductor device to provide a contact area for connection to external circuitry is disclosed, the composition comprising an ink system containing a metal powder, a binder and vehicle, and a metal frit. The ink is screened onto the semiconductor surface in the desired pattern and is heated to a temperature sufficient to cause the metal frit to become liquid. The metal frit dissolves some of the metal powder and densifies the structure by transporting the dissolved metal powder in a liquid sintering process. The sintering process typically may be carried out in any type of atmosphere. A small amount of dopant or semiconductor material may be added to the ink systems to achieve particular results if desired.

  19. Low-dimensional Te-based nanostructures.

    PubMed

    Wang, Qisheng; Safdar, Muhammad; Wang, Zhenxing; He, Jun

    2013-07-26

    Low-dimensional Te-based nanomaterials have attracted intense attention in recent years due to their novel physical properties including surface-state effects, photoelectricity, phase changes, and thermoelectricity. The recent development of synthesis methods of low-dimensional Te-based nanostructures is reviewed, such as van der Waals expitaxial growth and template-assisted solution-phase deposition. In addition, the unique properties of these materials, such as tunable surface states, high photoresponsivity, fast phase change, and high thermoelectricity figure of merit, are reviewed. The potential applications of low-dimensional Te-based nanostructures are broad but particularly promising for nanoscale electronic and photoelectronic devices. PMID:24048978

  20. Interface Structure of MoO3 on Organic Semiconductors.

    PubMed

    White, Robin T; Thibau, Emmanuel S; Lu, Zheng-Hong

    2016-01-01

    We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces at various stages of MoO3 deposition on these organic semiconductor surfaces. For the interface physical structure, it is found that MoO3 diffuses into the underlying organic layer, exhibiting a trend of increasing diffusion with decreasing molecular molar mass. For the interface chemical structure, new carbon and molybdenum core-level states are observed, as a result of interfacial electron transfer from organic semiconductor to MoO3. For the interface electronic structure, energy level alignment is observed in agreement with the universal energy level alignment rule of molecules on metal oxides, despite deposition order inversion. PMID:26880185

  1. Interface Structure of MoO3 on Organic Semiconductors

    PubMed Central

    White, Robin T.; Thibau, Emmanuel S.; Lu, Zheng-Hong

    2016-01-01

    We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces at various stages of MoO3 deposition on these organic semiconductor surfaces. For the interface physical structure, it is found that MoO3 diffuses into the underlying organic layer, exhibiting a trend of increasing diffusion with decreasing molecular molar mass. For the interface chemical structure, new carbon and molybdenum core-level states are observed, as a result of interfacial electron transfer from organic semiconductor to MoO3. For the interface electronic structure, energy level alignment is observed in agreement with the universal energy level alignment rule of molecules on metal oxides, despite deposition order inversion. PMID:26880185

  2. Low-dimensional compounds containing cyanido groups. XXVIII. Crystal structure, spectroscopic and magnetic properties of two copper(II) tetracyanidoplatinate complexes with 1,2-diaminopropane

    SciTech Connect

    Vavra, Martin; Potočňák, Ivan; Dušek, Michal; Čižmár, Erik; Ozerov, Mykhaylo; Zvyagin, Sergei A.

    2015-05-15

    Violet crystals of ([Cu(pn){sub 2}]{sub 2}[Pt(CN){sub 4}])[Pt(CN){sub 4}]·2H{sub 2}O (1, pn=1,2-diaminopropane) and blue crystals of [Cu(pn)Pt(CN){sub 4}]{sub n}·nH{sub 2}O (2) were prepared under hydrothermal conditions and characterized using elemental analysis, IR and UV–vis spectroscopy and by X-ray crystal structure analysis. Different number of ν(C≡N) absorption bands of these two compounds reflects their different structures. An X-ray crystal structure analysis has shown that complex 1 is of ionic character and is formed from trinuclear [Cu(pn){sub 2}–Pt(CN){sub 4}–Cu(pn){sub 2}]{sup 2+} complex cation and discrete [Pt(CN){sub 4}]{sup 2–} anion together with two molecules of crystal water. On the other hand, complex 2 is of polymeric character and is formed by 2D networks of [Cu(pn)Pt(CN){sub 4}]{sub n} composition and completed by n molecules of crystal water. Magnetic measurements show the presence of a weak antiferromagnetic exchange interaction in complex 1 (Θ=–0.2 K), while the magnetic susceptibility of complex 2 is well described by the model of uniform S=1/2 spin chain with exchange interaction J/k{sub B}=–1.64 K. - Graphical abstract: Two complexes of different structural types from the system Cu(II) – 1,2–diaminopropane – [Pt(CN){sub 4}]{sup 2–} have been isolated. These were characterized by IR and UV–VIS spectroscopy, X–ray crystal structure analysis together with the magnetic measurements. On one hand ([Cu(pn){sub 2}]{sub 2}[Pt(CN){sub 4}])[Pt(CN){sub 4}]∙2H{sub 2}O is of ionic character and is formed from trinuclear complex cation and discrete anion together with two molecules of crystal water. On the other hand, [Cu(pn)Pt(CN){sub 4}]{sub n}∙nH{sub 2}O is of polymeric character and is formed by 2D networks of [Cu(pn)Pt(CN){sub 4}]{sub n} composition and completed by n molecules of crystal water. - Highlights: • Two complexes of different compositions from one system have been isolated. • First complex is of

  3. EDITORIAL: (Nano)characterization of semiconductor materials and structures (Nano)characterization of semiconductor materials and structures

    NASA Astrophysics Data System (ADS)

    Bonanni, Alberta

    2011-06-01

    The latest impressive advancements in the epitaxial fabrication of semiconductors and in the refinement of characterization techniques have the potential to allow insight into the deep relation between materials' structural properties and their physical and chemical functionalities. Furthermore, while the comprehensive (nano)characterization of semiconductor materials and structures is becoming more and more necessary, a compendium of the currently available techniques is lacking. We are positive that an overview of the hurdles related to the specific methods, often leading to deceptive interpretations, will be most informative for the broad community working on semiconductors, and will help in shining some light onto a plethora of controversial reports found in the literature. From this perspective, with this special issue we address and highlight the challenges and misinterpretations related to complementary local (nanoscale) and more global experimental methods for the characterization of semiconductors. The six topical reviews and the three invited papers by leading experts in the specific fields collected in here are intended to provide the required broad overview on the possibilities of actual (nano)characterization methods, from the microscopy of single quantum structures, over the synchrotron-based absorption and diffraction of nano-objects, to the contentious detection of tiny magnetic signals by quantum interference and resonance techniques. We are grateful to all the authors for their valuable contributions. Moreover, I would like to thank the Editorial Board of the journal for supporting the realization of this special issue and for inviting me to serve as Guest Editor. We greatly appreciate the work of the reviewers, of the editorial staff of Semiconductor Science and Technology and of IOP Publishing. In particular, the efforts of Alice Malhador in coordinating this special issue are acknowledged.

  4. Low-dimensional compounds containing cyanido groups. XXVIII. Crystal structure, spectroscopic and magnetic properties of two copper(II) tetracyanidoplatinate complexes with 1,2-diaminopropane

    NASA Astrophysics Data System (ADS)

    Vavra, Martin; Potočňák, Ivan; Dušek, Michal; Čižmár, Erik; Ozerov, Mykhaylo; Zvyagin, Sergei A.

    2015-05-01

    Violet crystals of {[Cu(pn)2]2[Pt(CN)4]}[Pt(CN)4]·2H2O (1, pn=1,2-diaminopropane) and blue crystals of [Cu(pn)Pt(CN)4]n·nH2O (2) were prepared under hydrothermal conditions and characterized using elemental analysis, IR and UV-vis spectroscopy and by X-ray crystal structure analysis. Different number of ν(C≡N) absorption bands of these two compounds reflects their different structures. An X-ray crystal structure analysis has shown that complex 1 is of ionic character and is formed from trinuclear [Cu(pn)2-Pt(CN)4-Cu(pn)2]2+ complex cation and discrete [Pt(CN)4]2- anion together with two molecules of crystal water. On the other hand, complex 2 is of polymeric character and is formed by 2D networks of [Cu(pn)Pt(CN)4]n composition and completed by n molecules of crystal water. Magnetic measurements show the presence of a weak antiferromagnetic exchange interaction in complex 1 (Θ=-0.2 K), while the magnetic susceptibility of complex 2 is well described by the model of uniform S=1/2 spin chain with exchange interaction J/kB=-1.64 K.

  5. Spin Hall Effect in Doped Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Das Sarma, Sankar

    2006-03-01

    We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

  6. Spin Hall Effect in Doped Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Das Sarma, S.

    2006-02-01

    In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as σxySJ/σxySS˜(ℏ/τ)/ɛF, with τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining σs/σc˜10-3-10-4, where σs(c) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)]SCIEAS0036-807510.1126/science.1105514 in n-doped 3D GaAs system.

  7. Confinement and Diffusion Effects in Dynamical Nuclear Polarization in Low Dimensional Nanostructures

    NASA Astrophysics Data System (ADS)

    Henriksen, Dan; Tifrea, Ionel

    2012-02-01

    We investigate the dynamic nuclear polarization as it results from the hyperfine coupling between nonequilibrium electronic spins and nuclear spins in semiconductor nanostructures. The natural confinement provided by low dimensional nanostructures is responsible for an efficient nuclear spin - electron spin hyperfine coupling [1] and for a reduced value of the nuclear spin diffusion constant [2]. In the case of optical pumping, the induced nuclear spin polarization is position dependent even in the presence of nuclear spin diffusion. This effect should be measurable via optically induced nuclear magnetic resonance or time-resolved Faraday rotation experiments. We discuss the implications of our calculations for the case of GaAs quantum well structures.[4pt] [1] I. Tifrea and M. E. Flatt'e, Phys. Rev. B 84, 155319 (2011).[0pt] [2] A. Malinowski and R. T. Harley, Solid State Commun. 114, 419 (2000).

  8. Electron Liquids in Semiconductor Quantum Structures

    SciTech Connect

    Aron Pinczuk

    2009-05-25

    The groups led by Stormer and Pinczuk have focused this project on goals that seek the elucidation of novel many-particle effects that emerge in two-dimensional electron systems (2DES) as the result from fundamental quantum interactions. This experimental research is conducted under extreme conditions of temperature and magnetic field. From the materials point of view, the ultra-high mobility systems in GaAs/AlGaAs quantum structures continue to be at the forefront of this research. The newcomer materials are based on graphene, a single atomic layer of graphite. The graphene research is attracting enormous attention from many communities involved in condensed matter research. The investigated many-particle phenomena include the integer and fractional quantum Hall effect, composite fermions, and Dirac fermions, and a diverse group of electron solid and liquid crystal phases. The Stormer group performed magneto-transport experiments and far-infrared spectroscopy, while the Pinczuk group explores manifestations of such phases in optical spectra.

  9. Evidence of low-dimensional antiferromagnetic ordering and crystal structure in the R sub 2 BaNiO sub 5 ( R =Y,Er) oxides

    SciTech Connect

    Amador, J.; Gutierrez-Puebla, E.; Monge, M.A.; Rasines, I.; Ruriaaz-Valero, C. ); Fernandez, F.; Saez-Puche, R. ); Campa, J.A. )

    1990-11-01

    Crystals of {ital R}{sub 2}BaNiO{sub 5} ({ital R}=Y,Er) have been grown, and their structures have been established by single-crystal x-ray diffraction. Both compounds crystallize in the Nd{sub 2}BaNiO{sub 5} structure type, with one-dimensional chains of vertex-sharing NiO{sub 6} octahedra in the direction of the {bold a} axis. These octahedra show an unusual twofold distortion: The Ni-O distances to the two axial oxygen atoms are considerably shorter, 0.3 A, than those to the four equatorial oxygens, and these oxygens are distorted from the right angles of a regular octahedron to 79.0(2){degree} or 77.7(6){degree}, respectively. As a result of this, Ni-O(axial)-Ni distances are very short, 3.76 and 3.75 A for {ital R}=Y and Er, respectively. X-ray powder diffraction data and the results of magnetic measurements for both oxides are given. The structural features mentioned elucidate why Ni{sup 2+} ions in polycrystalline Y{sub 2}BaNiO{sub 5} behave as a monodimensional system in which they become antiferromagnetically ordered below 300 K. Besides that, the ferromagnetic interactions that operate below 40 K can be due to tridimensional interchain interactions and/or the presence of ferromagnetic impurities. The estimated Neel temperature for Y{sub 2}BaNiO{sub 5}, higher than that reported for Y{sub 2}BaCuO{sub 5}, is explained by the promotion of the superexchange Ni-O-Ni interactions along the chains of flattened NiO{sub 6} octahedra sharing corners. In Er{sub 2}BaNiO{sub 5} both effects are masked by the strong paramagnetic signal of Er{sup 3+}, and a maximum observed at 15.6 K for the susceptibility is attributed to tridimensional ordering of the Er{sup 3+} cations.

  10. Photoemission Studies of Low Dimensional Metals

    NASA Astrophysics Data System (ADS)

    Grioni, Marco

    1998-03-01

    High-resolution angle resolved photoelectron spectroscopy (ARPES) is a powerful probe of the electronic structure and instabilities of low-dimensional metals. Quasi-2 dimensional materials, like the layered transition metal dichalcogenides, exhibit dispersing quasiparticle bands, normal Fermi liquid lineshapes, and the expected partial or total Fermi surface collapse induced by charge density wave transitions. By contrast, ARPES reveals unexpected and peculiar spectral properties in quasi 1D compounds. Quite generally, a strong suppression of spectral weight near the chemical potential (a pseudogap) is observed in the metallic state, indicative of strong correlations. This non-standard behavior is confirmed by ARPES results on typical 1D organic conductors like TTF-TCNQ and the Bechgaard salts (TMTSF)_2X (X=PF_6,ClO_4)(F. Zwick et al., Phys. Rev. Lett. 79), 3982 (1997). The absence of traces of the Fermi surface, and the spectral lineshapes, are incompatible with a Fermi liquid scenario, and hint to the charge-spin separation predicted by models for correlated fermions in 1D.

  11. Structural properties of bismuth-bearing semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A. B.

    1986-01-01

    The structural properties of bismuth-bearing III-V semiconductor alloys are addressed. Because the Bi compounds are not known to form zincblende structures, only the anion-substituted alloys InPBi, InAsBi, and InSbBi are considered candidates as narrow-gap semiconductors. Miscibility calculations indicate that InSbBi will be the most miscible, and InPBi, with the large lattice mismatch of the constituents, will be the most difficult to mix. Calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys, and substantially harder than the currently favored narrow-gap semiconductor HgCdTe. Thus, although InSbBi may be an easier material to prepare, InPBi promises to be a harder material. Growth of the Bi compounds will require high effective growth temperatures, probably attainable only through the use of nonequilibrium energy-assisted epitaxial growth techniques.

  12. Local measurement of optically induced photocurrent in semiconductor structures

    NASA Astrophysics Data System (ADS)

    Benesova, Marketa; Dobis, Pavel; Tomanek, Pavel; Uhdeova, Nadezda

    2003-07-01

    Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

  13. Structural properties of bismuth-bearing semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.; Miller, W. E.

    1988-01-01

    The structural properties of bismuth-bearing III-V semiconductor alloys InPBi, InAsBi, and InSbBi were studied theoretically. Bond energies, bond lengths, and strain coefficients were calculated for pure AlBi, GaBi, and InBi compounds and their alloys, and predictions were made for the mixing enthalpies, miscibility gaps, and critical metastable-to-stable material transition temperatures. Miscibility calculations indicate that InSbBi will be the most miscible, and the InPBi will be the the most difficult to mix. However, calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys and substantially harder than the currently favored narrow-gap semiconductor HgCdTe.

  14. Low Dimensionality Effects in Complex Magnetic Oxides

    NASA Astrophysics Data System (ADS)

    Kelley, Paula J. Lampen

    Complex magnetic oxides represent a unique intersection of immense technological importance and fascinating physical phenomena originating from interwoven structural, electronic and magnetic degrees of freedom. The resulting energetically close competing orders can be controllably selected through external fields. Competing interactions and disorder represent an additional opportunity to systematically manipulate the properties of pure magnetic systems, leading to frustration, glassiness, and other novel phenomena while finite sample dimension plays a similar role in systems with long-range cooperative effects or large correlation lengths. A rigorous understanding of these effects in strongly correlated oxides is key to manipulating their functionality and device performance, but remains a challenging task. In this dissertation, we examine a number of problems related to intrinsic and extrinsic low dimensionality, disorder, and competing interactions in magnetic oxides by applying a unique combination of standard magnetometry techniques and unconventional magnetocaloric effect and transverse susceptibility measurements. The influence of dimensionality and disorder on the nature and critical properties of phase transitions in manganites is illustrated in La0.7 Ca0.3MnO3, in which both size reduction to the nanoscale and chemically-controlled quenched disorder are observed to induce a progressive weakening of the first-order nature of the transition, despite acting through the distinct mechanisms of surface effects and site dilution. In the second-order material La0.8Ca0.2MnO3, a strong magnetic field is found to drive the system toward its tricritical point as competition between exchange interactions in the inhomogeneous ground state is suppressed. In the presence of large phase separation stabilized by chemical disorder and long-range strain, dimensionality has a profound effect. With the systematic reduction of particle size in microscale-phase-separated (La, Pr

  15. Band structure of core-shell semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Pistol, Mats-Erik; Pryor, Craig

    2009-03-01

    We present band structures of strained core-shell nanowires composed of zincblende III-V (binary) semiconductors. We consider all combinations of AlN, GaN, InN, and all combinations of AlP, GaP, AlAs, GaAs, InP, InAs, AlSb, GaSb, and InSb. We compute the γ- and X-conduction band minima as well as the valence band maximum, all as functions of the core and shell radii. The calculations were performed using continuum elasticity theory for the strain, eight-band strain-dependent k.p theory for the γ-point energies, and single band approximation for the X-point conduction minima. We identify structures with type-I, type-II and type-III band alignment, as well as systems in which one material becomes metallic due to a negative band-gap. We identify structures that may support exciton crystals with and without photoexcitation. We have also computed the effective masses, from which the confinement energy may be estimated. All the results [Pistol and Pryor, Phys. Rev. B 78, 115319] are available in graphical and tabular form at www.semiconductor.physics.uiowa.edu

  16. Predefined planar structures in semiconductor surfaces patterned by NSOM lithography

    NASA Astrophysics Data System (ADS)

    Lettrichova, Ivana; Pudis, Dusan; Laurencikova, Agata; Hasenohrl, Stanislav; Novak, Jozef; Skriniarova, Jaroslava; Kovac, Jaroslav

    2013-09-01

    Near-field scanning optical microscope (NSOM) lithography is one of optical technologies for planar structure fabrication, where exposure process is performed by optical near field produced at tip of fiber probe. Maskless exposure of defined regions is performed so that different periodic and predefined arrangement can be achieved. In this contribution, NSOM lithography is presented as effective tool for semiconductor device surface patterning. Non-contact mode of NSOM lithography was used to pattern planar predefined structures in GaAs, AlGaAs and GaP surfaces. In this way, GaAs/AlGaAs-based LED with patterned structure in the emitting surface was prepared, where patterned air holes show enhancement of radiation in comparison with the surrounding surface. Furthermore, NSOM in combination with lift-off technique was used to prepare metal-catalyst particles on GaP substrate for subsequent growth of GaP nanowires which can be used in photovoltaic applications.

  17. Simulating semiconductor structures for next-generation optical inspection technologies

    NASA Astrophysics Data System (ADS)

    Golani, Ori; Dolev, Ido; Pond, James; Niegemann, Jens

    2016-02-01

    We present a technique for optimizing advanced optical imaging methods for nanoscale structures, such as those encountered in the inspection of cutting-edge semiconductor devices. The optimization flow is divided to two parts: simulating light-structure interaction using the finite-difference time-domain (FDTD) method and simulating the optical imaging system by means of its optical transfer function. As a case study, FDTD is used to simulate 10-nm silicon line-space and static random-access memory patterns, with irregular structural protrusions and silicon-oxide particles as defects of interest. An ultraviolet scanning-spot optical microscope is used to detect these defects, and the optimization flow is used to find the optimal imaging mode for detection.

  18. Polar semiconductor heterojunction structure energy band diagram considerations

    NASA Astrophysics Data System (ADS)

    Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Hao, Yilong

    2016-03-01

    The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

  19. Transport in two-dimensional modulation-doped semiconductor structures

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.; Kodiyalam, S.; Pfeiffer, L. N.; West, K. W.

    2015-05-01

    We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants, which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first-order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultrahigh-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultrapure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the doping layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-doping growth conditions.

  20. Growth, structure, and optical characterization of diluted magnetic semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Cooley, Benjamin Joseph

    Nanowires combining the usually disparate areas of semiconductors and magnetism are of contemporary relevance within the context of semiconductor spintronics. This is a relatively new field of research that seeks to exploit electron spin within electronic and opto-electronic semiconductor devices. While much of the effort within semiconductor spintronics has been directed toward fundamental studies and applications of 3D, 2D and 0D systems, there has been little work to date on 1D systems. The distinctive change in the electronic density of states with changing dimensionality provides a strong motivation for developing and exploring semiconductor nanowires in which one might be able to probe and control spin-dependent phenomena within a 1D or quasi-1D environment. This thesis explores the crystal growth, structural properties and magneto-optical behavior of quasi-1D semiconductor nanowires in which we incorporate magnetism through two approaches: first, by synthesizing nanowires of the diluted magnetic semiconductor (Zn,Mn)Se, wherein the d-shell electrons of substitutional Mn ions interact with the band states of the ZnSe host lattice via sp--d exchange; second, by making hybrid core-shell nanostructures wherein a metallic ferromagnetic shell (MnAs) is epitaxially deposited on a semiconductor nanowire (GaAs). After an introductory overview of past work in the field and a description of the experimental techniques relevant to the thesis, we discuss our experimental results. The first set of experiments focuses on ZnSe and (Zn,Mn)Se nanowires grown in a single stage. The nanowires were grown on Si and GaAs substrates with a thin layer of gold evaporated onto them, which were then annealed before growth so that the gold formed nanoscale droplets. The growth yields samples covered in random arrays of nanowires growing out an an angle to the substrate, with an undergrowth of crooked nanowires and other small structures. The long thin nanowires vary in diameter, down to

  1. Density driven structural transformations in amorphous semiconductor clathrates

    SciTech Connect

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with the consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.

  2. Density driven structural transformations in amorphous semiconductor clathrates

    DOE PAGESBeta

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with themore » consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.« less

  3. Method for making a monolithic integrated high-T.sub.c superconductor-semiconductor structure

    NASA Technical Reports Server (NTRS)

    Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Garcia, Graham A. (Inventor); Russell, Stephen D. (Inventor); Clayton, Stanley R. (Inventor); Barfknecht, Andrew T. (Inventor)

    2000-01-01

    A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

  4. Monolithic integrated high-T.sub.c superconductor-semiconductor structure

    NASA Technical Reports Server (NTRS)

    Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Garcia, Graham A. (Inventor); Russell, Stephen D. (Inventor); Clayton, Stanley R. (Inventor); Barfknecht, Andrew T. (Inventor)

    2000-01-01

    A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

  5. Low dimensional modeling of wall turbulence

    NASA Astrophysics Data System (ADS)

    Aubry, Nadine

    2015-11-01

    In this talk we will review the original low dimensional dynamical model of the wall region of a turbulent boundary layer [Aubry, Holmes, Lumley and Stone, Journal of Fluid Dynamics 192, 1988] and discuss its impact on the field of fluid dynamics. We will also invite a few researchers who would like to make brief comments on the influence Lumley had on their research paths. In collaboration with Philip Holmes, Program in Applied and Computational Mathematics and Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ.

  6. Low-dimensional chaos in turbulence

    NASA Technical Reports Server (NTRS)

    Vastano, John A.

    1989-01-01

    Direct numerical simulations are being performed on two different fluid flows in an attempt to discover the mechanism underlying the transition to turbulence in each. The first system is Taylor-Couette flow; the second, two-dimensional flow over an airfoil. Both flows exhibit a gradual transition to high-dimensional turbulence through low-dimensional chaos. The hope is that the instabilities leading to chaos will be easier to relate to physical processes in this case, and that the understanding of these mechanisms can then be applied to a wider array of turbulent systems.

  7. Topological organization of (low-dimensional) chaos

    SciTech Connect

    Tufillaro, N.B.

    1992-12-01

    Recent progress toward classifying low-dimensional chaos measured from time series data is described. This classification theory assigns a template to the time series once the time series is embedded in three dimensions. The template describes the primary folding and stretching mechanisms of phase space responsible for the chaotic motion. Topological invariants of the unstable periodic orbits in the closure of the strange set are calculated from the (reconstructed) template. These topological invariants must be consistent with &ny model put forth to describe the time series data, and are useful in invalidating (or gaining confidence in) any model intended to describe the dynamical system generating the time series.

  8. Topological organization of (low-dimensional) chaos

    SciTech Connect

    Tufillaro, N.B.

    1992-01-01

    Recent progress toward classifying low-dimensional chaos measured from time series data is described. This classification theory assigns a template to the time series once the time series is embedded in three dimensions. The template describes the primary folding and stretching mechanisms of phase space responsible for the chaotic motion. Topological invariants of the unstable periodic orbits in the closure of the strange set are calculated from the (reconstructed) template. These topological invariants must be consistent with ny model put forth to describe the time series data, and are useful in invalidating (or gaining confidence in) any model intended to describe the dynamical system generating the time series.

  9. Electronic Properties of Low-Dimensional Materials Under Periodic Potential

    NASA Astrophysics Data System (ADS)

    Jamei, Mehdi

    In the quest for the further miniaturization of electronic devices, numerous fabrication techniques have been developed. The semiconductor industry has been able to manifest miniaturization in highly complex and ultra low-power integrated circuits and devices, transforming almost every aspect of our lives. However, we may have come very close to the end of this trend. While advanced machines and techniques may be able to overcome technological barriers, theoretical and fundamental barriers are inherent to the top-down miniaturization approach and cannot be circumvented. As a result, the need for novel and natural alternatives to replace old materials is valued now more than ever. Fortunately, there exists a large group of materials that essentially has low-dimensional (quasi-one- or quasi-two-dimensional) structures. Graphene, a two-dimensional form of carbon, which has attracted a lot of attention in recent years, is a perfect example of a prime material from this group. Niobium tri-selenide (NbSe3), from a family of trichalcogenides, has a highly anisotropic structure and electrical conductivity. At sufficiently low temperatures, NbSe3 also exhibits two independent "sliding charge density waves"-- an exciting phenomenon, which could be altered by changing the overall size of the material. In NbSe3 (and Blue Bronze K0.3MoO3 which has a similar structure and electrical behavior), the effect of a periodic potential could be seen in creating a charge density wave (CDW) that is incommensurate to the underlying lattice. The required periodic potential is provided by the crystal ions when ordered in a particular way. The consequence is a peculiar non-linear conductivity behavior, as well as a unique narrow-band noise spectrum. Theoretical and experimental studies have concluded that the dynamic properties of resulting CDW are directly related to the crystal impurity density, and other pinning potentials. Therefore, reducing the overall size of the crystal could

  10. Far-Infrared and Optical Studies of Gallium Arsenide and Aluminum Gallium Arsenide Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Stanaway, Mark Brian

    Available from UMI in association with The British Library. Requires signed TDF. This thesis reports far-infrared (FIR) and photoluminescence studies, performed at low temperatures (4.2K) and at magnetic fields up to 25T, of selectively and inadvertently doped bulk and low dimensional gallium arsenide (GaAs) and aluminium gallium arsenide (AlGaAs) semiconductor structures grown by molecular beam epitaxy. High-resolution FIR magnetospectroscopy of ultra -high mobility n-GaAs reveals a variety of shallow donor intra-impurity transitions plus spin-split higher Landau level transitions in the photoconductive response. The first observation of polarons bound to D^ - ions in bulk n-GaAs is reported. The excited state spectrum of the confined silicon donor in GaAs/AlGaAs multi-quantum wells (MQWs) has been examined. Narrower linewidths and more higher excited state donor transitions are noted in the present photoconductive investigation compared with previous reports. The electron recombination dynamics has been examined in silicon-doped GaAs/AlGaAs MQWs and homogeneous and sheet -doped bulk n-GaAs samples using time-resolved FIR photoconductivity. The extrinsic response of doped MQW structures suggests a potential use as a fast, sensitive detectors of FIR. FIR transmission measurements are reported for GaAs/AlGaAs quantum wells (QWs) of various widths in magnetic fields of up to 20T, tilted away from the normal to the QW plane by angles up to theta = 50^circ. Deviation of the cyclotron resonance field from a costheta law are interpreted using theoretical models describing Landau level/electric subband coupling. The in-plane magnetic field and excitation power dependence of the photoluminescence intensity of a GaAs/AlGaAs QW spectral feature is interpreted in terms of charge transfer in the QW, using a coupled oscillator model, and the efficiency of nonradiative electronic traps. In-plane magnetic field studies of the photoluminescence from a superlattice structure

  11. Low-dimensional Representation of Error Covariance

    NASA Technical Reports Server (NTRS)

    Tippett, Michael K.; Cohn, Stephen E.; Todling, Ricardo; Marchesin, Dan

    2000-01-01

    Ensemble and reduced-rank approaches to prediction and assimilation rely on low-dimensional approximations of the estimation error covariances. Here stability properties of the forecast/analysis cycle for linear, time-independent systems are used to identify factors that cause the steady-state analysis error covariance to admit a low-dimensional representation. A useful measure of forecast/analysis cycle stability is the bound matrix, a function of the dynamics, observation operator and assimilation method. Upper and lower estimates for the steady-state analysis error covariance matrix eigenvalues are derived from the bound matrix. The estimates generalize to time-dependent systems. If much of the steady-state analysis error variance is due to a few dominant modes, the leading eigenvectors of the bound matrix approximate those of the steady-state analysis error covariance matrix. The analytical results are illustrated in two numerical examples where the Kalman filter is carried to steady state. The first example uses the dynamics of a generalized advection equation exhibiting nonmodal transient growth. Failure to observe growing modes leads to increased steady-state analysis error variances. Leading eigenvectors of the steady-state analysis error covariance matrix are well approximated by leading eigenvectors of the bound matrix. The second example uses the dynamics of a damped baroclinic wave model. The leading eigenvectors of a lowest-order approximation of the bound matrix are shown to approximate well the leading eigenvectors of the steady-state analysis error covariance matrix.

  12. Multiscale approach to the electronic structure of doped semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Sinai, Ofer; Hofmann, Oliver T.; Rinke, Patrick; Scheffler, Matthias; Heimel, Georg; Kronik, Leeor

    2015-02-01

    The inclusion of the global effects of semiconductor doping poses a unique challenge for first-principles simulations, because the typically low concentration of dopants renders an explicit treatment intractable. Furthermore, the width of the space-charge region (SCR) at charged surfaces often exceeds realistic supercell dimensions. Here, we present a multiscale technique that fully addresses these difficulties. It is based on the introduction of a charged sheet, mimicking the SCR-related field, along with free charge which mimics the bulk charge reservoir, such that the system is neutral overall. These augment a slab comprising "pseudoatoms" possessing a fractional nuclear charge matching the bulk doping concentration. Self-consistency is reached by imposing charge conservation and Fermi level equilibration between the bulk, treated semiclassically, and the electronic states of the slab, which are treated quantum-mechanically. The method, called CREST—the charge-reservoir electrostatic sheet technique—can be used with standard electronic structure codes. We validate CREST using a simple tight-binding model, which allows for comparison of its results with calculations encompassing the full SCR explicitly. Specifically, we show that CREST successfully predicts scenarios spanning the range from no to full Fermi level pinning. We then employ it with density functional theory, obtaining insight into the doping dependence of the electronic structures of the metallic "clean-cleaved" Si(111) surface and its semiconducting (2 ×1 ) reconstructions.

  13. Nanoscale electrodeposition of low-dimensional metal phases and clusters.

    PubMed

    Staikov, Georgi

    2016-08-01

    The present status of the problem of electrochemical formation of low-dimensional metal phases is reviewed. The progress in this field achieved in the last two decades is discussed on the basis of experimental results obtained in selected electrochemical systems with well defined single crystal substrates. The influence of crystallographic orientation and surface inhomogeneities of foreign substrates on the mechanism of formation and the atomic structure of two-dimensional (2D) metal phases in the underpotential deposition range is considered. The localized electrodeposition of metal nanoclusters on solid state surfaces applying the STM-tip as a nanoelectrode is demonstrated. PMID:27273215

  14. Plasmonically-enhanced mid-infrared photoluminescence in a metal/narrow-gap semiconductor structure

    NASA Astrophysics Data System (ADS)

    Lu, Pengqi; Cai, Chunfeng; Zhang, Bingpo; Liu, Bozhi; Wu, Huizhen; Bi, Gang; Si, Jianxiao

    2016-05-01

    We report the enhancement of the mid-infrared (MIR) luminescence intensity in a nanoscale metal/semiconductor structure by the coupling of surface plasmon polaritons (SPPs) with excitons in a narrow-gap semiconductor. The SPPs are efficiently excited by the total internal reflection photons at a metal/semiconductor interface. The intense electric field induced by SPPs, in turn, greatly changes the radiative recombination rates of the excitons generated by the pumping laser and thus the MIR luminescence intensity. The finding avails the understanding of fundamental science of SPs in narrow-gap semiconductors and the development of novel MIR devices.

  15. Dangling-bond and void-like structure in amorphours semiconductors

    NASA Astrophysics Data System (ADS)

    Wu, Xiang; Chen, Hong

    1985-12-01

    To explain the differences in properties between the chalcogenide glassy semiconductors and the tetrahedrally-bonded semiconductors, a microscopic structural model is given in this letter. Based on this model, we can not only get two-level systems, negative-U pairs, and the Urbach rule, but also account for some recent experiments.

  16. Mechanical properties of low dimensional materials

    NASA Astrophysics Data System (ADS)

    Saini, Deepika

    Recent advances in low dimensional materials (LDMs) have paved the way for unprecedented technological advancements. The drive to reduce the dimensions of electronics has compelled researchers to devise newer techniques to not only synthesize novel materials, but also tailor their properties. Although micro and nanomaterials have shown phenomenal electronic properties, their mechanical robustness and a thorough understanding of their structure-property relationship are critical for their use in practical applications. However, the challenges in probing these mechanical properties dramatically increase as their dimensions shrink, rendering the commonly used techniques inadequate. This dissertation focuses on developing techniques for accurate determination of elastic modulus of LDMs and their mechanical responses under tensile and shear stresses. Fibers with micron-sized diameters continuously undergo tensile and shear deformations through many phases of their processing and applications. Significant attention has been given to their tensile response and their structure-tensile properties relations are well understood, but the same cannot be said about their shear responses or the structure-shear properties. This is partly due to the lack of appropriate instruments that are capable of performing direct shear measurements. In an attempt to fill this void, this dissertation describes the design of an inexpensive tabletop instrument, referred to as the twister, which can measure the shear modulus (G) and other longitudinal shear properties of micron-sized individual fibers. An automated system applies a pre-determined twist to the fiber sample and measures the resulting torque using a sensitive optical detector. The accuracy of the instrument was verified by measuring G for high purity copper and tungsten fibers. Two industrially important fibers, IM7 carbon fiber and KevlarRTM 119, were found to have G = 17 and 2.4 GPa, respectively. In addition to measuring the shear

  17. Ion mixing of III-V compound semiconductor layered structures

    SciTech Connect

    Xia, W.; Pappert, S.A.; Zhu, B.; Clawson, A.R.; Yu, P.K.L.; Lau, S.S. ); Poker, D.B.; White, C.W. ); Schwarz, S.A. )

    1992-03-15

    Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions ({similar to}10{sup 15}/cm{sup 2}) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.

  18. Convection, stability, and low dimensional dynamics

    SciTech Connect

    Doering, C.R.

    1997-05-01

    Recent developments concerning the connection between notions of hydrodynamic stability{emdash}usually associated with stationary laminar flows{emdash}and dynamics, most notably turbulent fluid flows, are reviewed. Based on a technical device originally introduced by Hopf in 1941, a rigorous mathematical relationship between criteria for nonlinear energy stability and bounds on global transport by steady, unsteady, or even turbulent flows, has been established. The optimal {open_quotes}marginal stability{close_quotes} criteria for the best bound leads to a novel variational problem, and the differential operator associated with the stability condition generates an adapted basis in which turbulent flow fields may naturally be decomposed. The application and implications of Galerkin truncations in these bases to produce low dimensional dynamical systems models is discussed in the context of thermal convection in a saturated porous layer. {copyright} {ital 1997 American Institute of Physics.}

  19. Electronic Properties of Semiconductor Quantum-Ring Structures

    NASA Astrophysics Data System (ADS)

    Pacheco, Mónica; Fuster, Gonzalo; Barticevic, Zdenka

    2002-03-01

    Motivated by the interesting electronic properties exhibited by these nanorings when they are threaded by a magnetic field, we studied a new semiconductor structure formed by two coupled rings which are concentrically disposed. In order to calculate the two-ring electronic spectrum it is assumed that the in-plane electronic-potential of each ring is generated by a rotation, around the ring axis, of a one-dimensional parabolic potential centered to a distance ρ=ρo of the ring center. The potential of the two-rings system is then assumed as a superposition of a potential for each ring with their minimum at different radii and being truncated in the intersection point. In this way a potential barrier is formed in between the rings. We solve the in-plane problem by expanding the corresponding envelope function as a linear combination of solutions of isolated rings. We have made a detailed study about the influence of the characteristic confinement-parameters of each rings, and of the barrier strength, on the electronic energy spectrum of the system. A uniform magnetic field is applied along the common ring axis and we explore the effects on the Aharonov-Bohm-type oscillations in the energy levels caused by the particular geometry of two coupled quantum-rings.

  20. Investigation of Semiconductor Surface Structure by Transmission Ion Channeling.

    NASA Astrophysics Data System (ADS)

    Lyman, Paul Francis

    The primary thrust of this dissertation is the investigation of the composition and structure of two important surface systems on Si, and the study of how this structure evolves under the influence of ion bombardment or film growth. I have studied the initial stages of oxidation of Si immediately following removal of a surface oxide by an HF etch. I have also studied the structure of Ge deposited on clean Si(100) at low temperatures. These systems are of considerable technological interest, but were chosen because they naturally pose fundamental questions regarding physical and chemical processes at surfaces. In the study of the oxidation of Si, I have focused on the influence of the bombarding ion beam in altering the structure and composition of the surface layer. Thus, the system then provides a natural vehicle to study ion-induced chemistry. In the study of low-temperature growth of Ge, I have focused on the structure of the Ge layer and the evolution of that structure upon further deposition or upon heating. This simple system is a model one for observing strained semiconductor heteroepitaxial growth. The primary probe for these studies was transmission channeling of MeV ions. The sensitivity of this technique to correlations between the substrate and an overlayer allowed us to make the following observations. The O, Si and H bound in the thin oxide formed after an HF etch and H_2O rinse occupy preferred positions with respect to the Si matrix. Upon ion bombardment, the O further reacts with the Si (the reaction proceeds linearly with the ion fluence) and the portion of the H that is uncorrelated to the substrate is preferentially desorbed. For the case of Ge growth on Si(100)-(2 x 1) at room temperature, a substantial fraction of the Ge films is strained to occupy sites having the lattice constant of the Si substrate (pseudomorphic growth). A model for film growth is proposed in which pseudomorphic domains constitute roughly half of the Ge films up to a

  1. Exciton complexes in low dimensional transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Thilagam, A.

    2014-08-01

    We examine the excitonic properties of layered configurations of low dimensional transition metal dichalcogenides (LTMDCs) using the fractional dimensional space approach. The binding energies of the exciton, trion, and biexciton in LTMDCs of varying layers are analyzed, and linked to the dimensionality parameter α, which provides insight into critical electro-optical properties (relative oscillator strength, absorption spectrum, exciton-exciton interaction) of the material systems. The usefulness of α is highlighted by its independence of the physical mechanisms underlying the confinement effects of geometrical structures. Our estimates of the binding energies of exciton complexes for the monolayer configuration of transition metal dichalcogenides suggest a non-collinear structure for the trion and a positronium-molecule-like square structure for the biexciton.

  2. Exciton complexes in low dimensional transition metal dichalcogenides

    SciTech Connect

    Thilagam, A.

    2014-08-07

    We examine the excitonic properties of layered configurations of low dimensional transition metal dichalcogenides (LTMDCs) using the fractional dimensional space approach. The binding energies of the exciton, trion, and biexciton in LTMDCs of varying layers are analyzed, and linked to the dimensionality parameter α, which provides insight into critical electro-optical properties (relative oscillator strength, absorption spectrum, exciton-exciton interaction) of the material systems. The usefulness of α is highlighted by its independence of the physical mechanisms underlying the confinement effects of geometrical structures. Our estimates of the binding energies of exciton complexes for the monolayer configuration of transition metal dichalcogenides suggest a non-collinear structure for the trion and a positronium-molecule-like square structure for the biexciton.

  3. Tuning Surface Properties of Low Dimensional Materials via Strain Engineering.

    PubMed

    Yang, Shengchun; Liu, Fuzhu; Wu, Chao; Yang, Sen

    2016-08-01

    The promising and versatile applications of low dimensional materials are largely due to their surface properties, which along with their underlying electronic structures have been well studied. However, these materials may not be directly useful for applications requiring properties other than their natal ones. In recent years, strain has been shown to be an additionally useful handle to tune the physical and chemical properties of materials by changing their geometric and electronic structures. The strategies for producing strain are summarized. Then, the electronic structure of quasi-two dimensional layered non-metallic materials (e.g., graphene, MX2, BP, Ge nanosheets) under strain are discussed. Later, the strain effects on catalytic properties of metal-catalyst loaded with strain are focused on. Both experimental and computational perspectives for dealing with strained systems are covered. Finally, an outlook on engineering surface properties utilizing strain is provided. PMID:27376498

  4. Temperature dependence of the electronic structure of semiconductors and insulators

    SciTech Connect

    Poncé, S. Gillet, Y.; Laflamme Janssen, J.; Gonze, X.; Marini, A.; Verstraete, M.

    2015-09-14

    The renormalization of electronic eigenenergies due to electron-phonon coupling (temperature dependence and zero-point motion effect) is sizable in many materials with light atoms. This effect, often neglected in ab initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the recent progresses in this field and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a slowly converging q-point integration. For non-zero Born effective charges, we show that a divergence appears in the electron-phonon matrix elements at q → Γ, leading to a divergence of the adiabatic renormalization at band extrema. This problem is exacerbated by the slow convergence of Born effective charges with electronic wavevector sampling, which leaves residual Born effective charges in ab initio calculations on materials that are physically devoid of such charges. Here, we propose a solution that improves this convergence. However, for materials where Born effective charges are physically non-zero, the divergence of the renormalization indicates a breakdown of the adiabatic harmonic approximation, which we assess here by switching to the non-adiabatic harmonic approximation. Also, we study the convergence behavior of the renormalization and develop reliable extrapolation schemes to obtain the converged results. Finally, the adiabatic and non-adiabatic theories, with corrections for the slow Born effective charge convergence problem (and the associated divergence) are applied to the study of five semiconductors and insulators: α-AlN, β-AlN, BN, diamond, and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening, and the renormalized electronic band structure.

  5. Temperature dependence of the electronic structure of semiconductors and insulators.

    PubMed

    Poncé, S; Gillet, Y; Laflamme Janssen, J; Marini, A; Verstraete, M; Gonze, X

    2015-09-14

    The renormalization of electronic eigenenergies due to electron-phonon coupling (temperature dependence and zero-point motion effect) is sizable in many materials with light atoms. This effect, often neglected in ab initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the recent progresses in this field and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a slowly converging q-point integration. For non-zero Born effective charges, we show that a divergence appears in the electron-phonon matrix elements at q → Γ, leading to a divergence of the adiabatic renormalization at band extrema. This problem is exacerbated by the slow convergence of Born effective charges with electronic wavevector sampling, which leaves residual Born effective charges in ab initio calculations on materials that are physically devoid of such charges. Here, we propose a solution that improves this convergence. However, for materials where Born effective charges are physically non-zero, the divergence of the renormalization indicates a breakdown of the adiabatic harmonic approximation, which we assess here by switching to the non-adiabatic harmonic approximation. Also, we study the convergence behavior of the renormalization and develop reliable extrapolation schemes to obtain the converged results. Finally, the adiabatic and non-adiabatic theories, with corrections for the slow Born effective charge convergence problem (and the associated divergence) are applied to the study of five semiconductors and insulators: α-AlN, β-AlN, BN, diamond, and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening, and the renormalized electronic band structure

  6. Growth and metal-oxide-semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kaneko, Kentaro; Ito, Yoshito; Uchida, Takayuki; Fujita, Shizuo

    2015-09-01

    The growth of corundum-structured α-In2O3, showing an X-ray diffraction (0006) rocking curve full-width at half maximum of 185 arcsec and electron Hall mobility of 130 cm2 V-1 s-1, was demonstrated on a sapphire substrate with an α-Ga2O3 buffer layer. An MOSFET of α-In2O3 exhibited pinch-off characteristics and an on-off ratio of drain current of 106. The use of mist chemical vapor deposition for the insulator-semiconductor structure was advantageous for low-cost devices.

  7. Rf linearity in low dimensional nanowire mosfets

    NASA Astrophysics Data System (ADS)

    Razavieh, Ali

    linear Id-Vgs characteristics with a constant gm of which is independent of the choice of channel material when operated under high enough drain voltages. Unique scaling potential of nanowires in terms of body thickness, channel length, and oxide thickness makes nanowire transistors an excellent device structure of choice to operate in 1-D ballistic transport regime in the QCL. A set of guidelines is provided for material parameters and device dimensions for nanowire FETs, which meet the three criteria of i) 1-D transport ii) operation in the QCL iii) ballistic transport, and challenges and limitations of fulfilling any of the above transport conditions from materials point of view are discussed. This work also elaborates how a non-ideal device, one that approaches but does not perfectly fulfill criteria i) through iii), can be analyzed in terms of its linearity performance. In particular the potential of silicon based devices will be discussed in this context, through mixture of experiment and simulation. 1-D transport is successfully achieved in the lab. QCL is simulated through back calculation of the band movement of the transistors in on-state. Quasi-ballistic transport conditions can be achieved by cooling down the samples to 77K. Since, ballistic transport is challenging to achieve for practical channel lengths in today's leading semiconductor device technologies the effect of carrier back-scattering on RF linearity is explored through third order intercept point (IIP3) analysis. These findings show that for the devices which operate in the QCL, while 1-D sub-bands are involved in carrier transport, current linearity is directly related to the nature of the dominant scattering mechanism in the channel, and can be improved by proper choice of channel material in order to enforce a specific scattering mechanism to prevail in the channel. Usually, in semiconductors, the dominant scattering mechanism in the channel is the superposition of different mechanisms

  8. Superfluidity and Chaos in low dimensional circuits.

    PubMed

    Arwas, Geva; Vardi, Amichay; Cohen, Doron

    2015-01-01

    The hallmark of superfluidity is the appearance of "vortex states" carrying a quantized metastable circulating current. Considering a unidirectional flow of particles in a ring, at first it appears that any amount of scattering will randomize the velocity, as in the Drude model, and eventually the ergodic steady state will be characterized by a vanishingly small fluctuating current. However, Landau and followers have shown that this is not always the case. If elementary excitations (e.g. phonons) have higher velocity than that of the flow, simple kinematic considerations imply metastability of the vortex state: the energy of the motion cannot dissipate into phonons. On the other hand if this Landau criterion is violated the circulating current can decay. Below we show that the standard Landau and Bogoliubov superfluidity criteria fail in low-dimensional circuits. Proper determination of the superfluidity regime-diagram must account for the crucial role of chaos, an ingredient missing from the conventional stability analysis. Accordingly, we find novel types of superfluidity, associated with irregular or chaotic or breathing vortex states. PMID:26315272

  9. Superfluidity and Chaos in low dimensional circuits

    PubMed Central

    Arwas, Geva; Vardi, Amichay; Cohen, Doron

    2015-01-01

    The hallmark of superfluidity is the appearance of “vortex states” carrying a quantized metastable circulating current. Considering a unidirectional flow of particles in a ring, at first it appears that any amount of scattering will randomize the velocity, as in the Drude model, and eventually the ergodic steady state will be characterized by a vanishingly small fluctuating current. However, Landau and followers have shown that this is not always the case. If elementary excitations (e.g. phonons) have higher velocity than that of the flow, simple kinematic considerations imply metastability of the vortex state: the energy of the motion cannot dissipate into phonons. On the other hand if this Landau criterion is violated the circulating current can decay. Below we show that the standard Landau and Bogoliubov superfluidity criteria fail in low-dimensional circuits. Proper determination of the superfluidity regime-diagram must account for the crucial role of chaos, an ingredient missing from the conventional stability analysis. Accordingly, we find novel types of superfluidity, associated with irregular or chaotic or breathing vortex states. PMID:26315272

  10. Pseudopotential-based study of electron transport in low-dimensionality nanostructures

    NASA Astrophysics Data System (ADS)

    Fischetti, Massimo

    2013-03-01

    Pseudopotentials- empirical and ab initio - are now being more commonly used to study not only the atomic and electronic structure of nanometer-scale systems, but also their electronic transport properties. Here we shall give a bird-eye view of the use of density functional theory (DFT) to calibrate empirical pseudopotentials (EPs), of EPs to calculate efficiently the electronic structure of low-dimensionality systems, the most significant electronic scattering processes, and to study semiclassical and quantum electronic transport. Low-dimensionality systems considered here include thin semiconductor layers, graphene, graphene- and silicane-nanoribbons, and silicon nanowires. Regarding graphene, the high electron mobility measured in suspended graphene sheets (~ 200,000 cm2/Vs) is the result of a relatively weak carrier-phonon and the strong dielectric-screening property. However, in practical applications graphene is likely to be supported by an insulating substrate, top-gated, and possibly used in the form of narrow armchair-edge nanoribbons (aGNRs) in order to open a gap. We will discuss several scattering processes which may affect the electron transport properties in these situations. First, we shall present results of the calculation of the intrinsic electron-phonon scattering rates in suspended graphene using empirical pseudopotentials and the rigid-ion approximation, resulting in an electron mobility consistent with the experimental results. We shall then discuss the role of interfacial coupled substrate optical-phonon/graphene-plasmons in depressing the electron mobility in graphene supported by several insulators (SiO2, HfO2, Al2O3, and h-BN). We shall also discuss the role of Coulomb scattering with charged defects/impurities in gated graphene sheets and the role of the metal gate in screening this interaction. Finally, we shall review the strong effect of line edge roughness (LER) on electron transport and localization in narrow aGNRs resulting from the

  11. The structure of constitutive equations for semiconductor devices

    SciTech Connect

    Buchanan, G.R.; Girrens, S.P.; Bennett, J.G.

    1987-01-01

    The fundamental equations that describe carrier transport in semiconductor materials are developed using the methods of continuum mixture theory and Maxwell's equations for electrodynamics. There are five basic equations that govern the behavior of current flux, electrostatic potential, electrons, and holes. The bahavior of the electrical chemical potentials are introduced and their relation to the current flux is discussed.

  12. Building Structural Complexity in Semiconductor Nanocrystals through Chemical Transformations

    SciTech Connect

    Sadtler, Bryce F

    2009-05-01

    Methods are presented for synthesizing nanocrystal heterostructures comprised of two semiconductor materials epitaxially attached within individual nanostructures. The chemical transformation of cation exchange, where the cations within the lattice of an ionic nanocrystal are replaced with a different metal ion species, is used to alter the chemical composition at specific regions ofa nanocrystal. Partial cation exchange was performed in cadmium sulfide (CdS) nanorods of well-defined size and shape to examine the spatial organization of materials within the resulting nanocrystal heterostructures. The selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. The exchange of copper (I) (Cu+) cations in CdS nanorods occurs preferentially at the ends of the nanorods. Theoretical modeling of epitaxial attachments between different facets of CdS and Cu2S indicate that the selectivity for cation exchange at the ends of the nanorods is a result of the low formation energy of the interfaces produced. During silver (I) (Ag+) cation exchange in CdS nanorods, non-selective nucleation of silver sulfide (Ag2S), followed by partial phase segregation leads to significant changes in the spatial arrangement of CdS and Ag2S regions at the exchange reaction proceeds through the nanocrystal. A well-ordered striped pattern of alternating CdS and Ag2S segments is found at intermediate fractions of exchange. The forces mediating this spontaneous process are a combination of Ostwald ripening to reduce the interfacial area along with a strain-induced repulsive interaction between Ag2S segments. To elucidate why Cu+ and Ag+ cation exchange with CdS nanorods produce different morphologies, models for epitaxial attachments between various facets of CdS with Cu2S or

  13. TOPICAL REVIEW: Low-dimensional surface oxides in the oxidation of Rh particles

    NASA Astrophysics Data System (ADS)

    Mittendorfer, Florian

    2010-10-01

    The oxidation of rhodium particles leads to the formation of low-dimensional nanostructures, namely ultrathin oxide films and stripes adsorbed on the metallic surface. These structures display unique electronic and structural properties, which have been studied in detail experimentally and theoretically in recent years. In this review, the state of research on low-dimensional surface oxides formed on Rh surfaces will be discussed with a special focus on the contributions derived from computational approaches. Several points elucidating the novel properties of the surface oxides will be addressed: (i) the structural relation between the surface oxides and their bulk counterparts, (ii) the electronic properties of the low-dimensional oxide films and (iii) potential catalytic and electronic applications of the surface oxides.

  14. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals

    SciTech Connect

    Hamad, K.S.

    2000-05-01

    Semiconductor nanocrystals are a system which has been the focus of interest due to their size dependent properties and their possible use in technological applications. Many chemical and physical properties vary systematically with the size of the nanocrystal and thus their study enables the investigation of scaling laws. Due to the increasing surface to volume ratio as size is decreased, the surfaces of nanocrystals are expected to have a large influence on their electronic, thermodynamic, and chemical behavior. In spite of their importance, nanocrystal surfaces are still relatively uncharacterized in terms of their structure, electronic properties, bonding, and reactivity. Investigation of nanocrystal surfaces is currently limited by what techniques to use, and which methods are suitable for nanocrystals is still being determined. This work presents experiments using x-ray and electronic spectroscopies to explore the structure, reactivity, and electronic properties of semiconductor (CdSe, InAs) nanocrystals and how they vary with size. Specifically, x-ray absorption near edge spectroscopy (XANES) in conjunction with multiple scattering simulations affords information about the structural disorder present at the surface of the nanocrystal. X-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS) probe the electronic structure in terms of hole screening, and also give information about band lineups when the nanocrystal is placed in electric contact with a substrate. XPS of the core levels of the nanocrystal as a function of photo-oxidation time yields kinetic data on the oxidation reaction occurring at the surface of the nanocrystal.

  15. Surprises in low-dimensional correlated systems

    NASA Astrophysics Data System (ADS)

    Lin, Hsiu-Hau

    In this thesis, correlation effects in low-dimensional systems were studied. In particular, we focus on two systems: a point-contact in the quantum-Hall regime under the influence of ac drive and quasi-one-dimensional ladder materials with generic interactions in weak coupling. Powerful techniques, including renormalization group, quantum field theory, operator product expansions, bosonization,...etc., were employed to extract surprising physics out of these strongly fluctuating systems. We first study the effect of an ac drive on the current-voltage (I-V) characteristics of a tunnel junction between two fractional Quantum Hall fluids at filling nu-1 an odd integer. In a semi-classical limit, the tunneling current exhibits mode-locking, which corresponds to plateaus in the I-V curve at integer multiples of I = ef , with f the ac drive frequency. However, the full quantum model exhibits rounded plateaus centered around the quantized current values due to quantum fluctuations. The locations of these plateaus can serve as an indirect hint of fractional charges. Switching attentions to quasi-one-dimensional coupled-chain systems, we present a systematic weak-coupling renormalization group (RG) technique and find that generally broad regions of the phase space of the ladder materials are unstable to pairing, usually with approximate d-wave symmetry. The dimensional crossovers from 1D to 2D were also discussed. Carbon nanotubes as possible candidates that display such unconventional pairing and interesting physics in weak coupling were discussed. Quite surprisingly, a hidden symmetry was found in the weakly-coupled two-leg ladder. A perturbative renormalization group analysis reveals that at half-filling the model scales onto an exactly soluble SO(8) symmetric Gross-Neveu model. Integrability of the Gross-Neveu model is employed to extract the exact energies, degeneracies and quantum numbers of all the low energy excited states, which fall into degenerate SO(8

  16. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOEpatents

    Spahn, Olga B.; Lear, Kevin L.

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  17. Synthesis and characterization of low-dimensional molecular magnetic materials

    NASA Astrophysics Data System (ADS)

    Liu, Chen

    This dissertation presents experimental results from the synthesis and structural, magnetic characterization of representative low-dimensional molecule-based magnetic materials. Most of the materials reported in this dissertation, both coordination polymers and cuprate, are obtained as the result of synthesizing and characterizing spin ladder systems; except the material studied in Chapter 2, ferricenyl(III)trisferrocenyl(II)borate, which is not related to the spin ladder project. The interest in spin ladder systems is due to the discovery of high-temperature superconductivity in doped cuprates possessing ladder-like structures, and it is hoped that investigation of the magnetic behavior of ladder-like structures will help us understand the mechanism of high-temperature superconductivity. Chapter 1 reviews fundamental knowledge of molecular magnetism, general synthetic strategies for low-dimensional coordination polymers, and a brief introduction to the current status of research on spin ladder systems. Chapter 2 presents a modified synthetic procedure of a previously known monomeric complex, ferricenyl(III)trisferrocenyl(II)borate, 1. Its magnetic properties were characterized and previous results have been disproved. Chapter 3 investigates the magnetism of [CuCl2(CH3CN)] 2, 2, a cuprate whose structure consists of isolated noninterpenetrating ladders formed by the stacking of Cu(II) dimers. This material presents an unexpected ferromagnetic interaction both within the dimeric units and between the dimers, and this behavior has been rationalized based on the effect of its terminal nonbridging ligands. In Chapter 4, the synthesis and magnetism of two ladder-like coordination polymers, [Co(NO3)2(4,4'-bipyridine) 1.5(MeCN)]n, 3, and Ni2(2,6-pyridinedicarboxylic acid)2(H2O)4(pyrazine), 4, are reported. Compound 3 possesses a covalent one-dimensional ladder structure in which Co(II) ions are bridged through bipyridine molecules. Compared to the materials discussed in

  18. Density Functional Theory of Structural and Electronic Properties of III-N Semiconductors

    SciTech Connect

    Guerel, H. Hakan; Akinci, Oezden; Uenlue, Hilmi

    2010-11-01

    In this wok, we present the density functional theory (DFT) calculations of cubic III-N based semiconductors by using the full potential linear augmented plane-wave method plus local orbitals as implemented in the WIEN2k code. Our aim is to predict the pressure effect on structural and electronic properties of III-N binaries and ternaries. Results are given for structural properties (e.g., lattice constant, elastic constants, bulk modulus, and its pressure derivative) and electronic properties (e.g., band structure, density of states, band gaps and band widths) of GaAs, GaN, AlN, and InN binaries and GaAsN ternaries. The proposed model uses GGA exchange-correlation potential to determine band gaps of semiconductors at {Gamma}, L and X high symmetry points of Brillouin zone. The results are found in good agreement with available experimental data for structural and electronic properties of these semiconductors.

  19. Predicted band structures of III-V semiconductors in the wurtzite phase

    SciTech Connect

    De, A.; Pryor, Craig E.

    2010-04-15

    While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier ab initio calculations, and where experimental results are available (InP, InAs, and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may facilitate the development of spin-based devices.

  20. Modeling of metal-ferroelectric-insulator-semiconductor structure considering the effects of interface traps

    NASA Astrophysics Data System (ADS)

    Sun, Jing; Shi, Xiao Rong; Zheng, Xue Jun; Tian, Li; Zhu, Zhe

    2015-06-01

    An improved model, in which the interface traps effects are considered, is developed by combining with quantum mechanical model, dipole switching theory and silicon physics of metal-oxide-semiconductor structure to describe the electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS) structure. Using the model, the effects of the interface traps on the surface potential (ϕSi) of the semiconductor, the low frequency (LF) capacitance-voltage (C-V) characteristics and memory window of MFIS structure are simulated, and the results show that the ϕSi- V and LF C-V curves are shifted toward the positive-voltage direction and the memory window become worse as the density of the interface trap states increases. This paper is expected to provide some guidance to the design and performance improvement of MFIS structure devices. In addition, the improved model can be integrated into electronic design automation (EDA) software for circuit simulation.

  1. Low-Dimensional Network Formation in Molten Sodium Carbonate

    PubMed Central

    Wilding, Martin C.; Wilson, Mark; Alderman, Oliver L. G.; Benmore, Chris; Weber, J. K. R.; Parise, John B.; Tamalonis, Anthony; Skinner, Lawrie

    2016-01-01

    Molten carbonates are highly inviscid liquids characterized by low melting points and high solubility of rare earth elements and volatile molecules. An understanding of the structure and related properties of these intriguing liquids has been limited to date. We report the results of a study of molten sodium carbonate (Na2CO3) which combines high energy X-ray diffraction, containerless techniques and computer simulation to provide insight into the liquid structure. Total structure factors (Fx(Q)) are collected on the laser-heated carbonate spheres suspended in flowing gases of varying composition in an aerodynamic levitation furnace. The respective partial structure factor contributions to Fx(Q) are obtained by performing molecular dynamics simulations treating the carbonate anions as flexible entities. The carbonate liquid structure is found to be heavily temperature-dependent. At low temperatures a low-dimensional carbonate chain network forms, at T = 1100 K for example ~55% of the C atoms form part of a chain. The mean chain lengths decrease as temperature is increased and as the chains become shorter the rotation of the carbonate anions becomes more rapid enhancing the diffusion of Na+ ions. PMID:27080401

  2. Low-Dimensional Network Formation in Molten Sodium Carbonate.

    PubMed

    Wilding, Martin C; Wilson, Mark; Alderman, Oliver L G; Benmore, Chris; Weber, J K R; Parise, John B; Tamalonis, Anthony; Skinner, Lawrie

    2016-01-01

    Molten carbonates are highly inviscid liquids characterized by low melting points and high solubility of rare earth elements and volatile molecules. An understanding of the structure and related properties of these intriguing liquids has been limited to date. We report the results of a study of molten sodium carbonate (Na2CO3) which combines high energy X-ray diffraction, containerless techniques and computer simulation to provide insight into the liquid structure. Total structure factors (F(x)(Q)) are collected on the laser-heated carbonate spheres suspended in flowing gases of varying composition in an aerodynamic levitation furnace. The respective partial structure factor contributions to F(x)(Q) are obtained by performing molecular dynamics simulations treating the carbonate anions as flexible entities. The carbonate liquid structure is found to be heavily temperature-dependent. At low temperatures a low-dimensional carbonate chain network forms, at T = 1100 K for example ~55% of the C atoms form part of a chain. The mean chain lengths decrease as temperature is increased and as the chains become shorter the rotation of the carbonate anions becomes more rapid enhancing the diffusion of Na(+) ions. PMID:27080401

  3. Low-Dimensional Network Formation in Molten Sodium Carbonate

    NASA Astrophysics Data System (ADS)

    Wilding, Martin C.; Wilson, Mark; Alderman, Oliver L. G.; Benmore, Chris; Weber, J. K. R.; Parise, John B.; Tamalonis, Anthony; Skinner, Lawrie

    2016-04-01

    Molten carbonates are highly inviscid liquids characterized by low melting points and high solubility of rare earth elements and volatile molecules. An understanding of the structure and related properties of these intriguing liquids has been limited to date. We report the results of a study of molten sodium carbonate (Na2CO3) which combines high energy X-ray diffraction, containerless techniques and computer simulation to provide insight into the liquid structure. Total structure factors (Fx(Q)) are collected on the laser-heated carbonate spheres suspended in flowing gases of varying composition in an aerodynamic levitation furnace. The respective partial structure factor contributions to Fx(Q) are obtained by performing molecular dynamics simulations treating the carbonate anions as flexible entities. The carbonate liquid structure is found to be heavily temperature-dependent. At low temperatures a low-dimensional carbonate chain network forms, at T = 1100 K for example ~55% of the C atoms form part of a chain. The mean chain lengths decrease as temperature is increased and as the chains become shorter the rotation of the carbonate anions becomes more rapid enhancing the diffusion of Na+ ions.

  4. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    SciTech Connect

    Tanaka, Masaaki; Ohya, Shinobu Nam Hai, Pham

    2014-03-15

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  5. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    NASA Astrophysics Data System (ADS)

    Tanaka, Masaaki; Ohya, Shinobu; Nam Hai, Pham

    2014-03-01

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  6. Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices

    SciTech Connect

    Suzuki, Tatsuo

    2015-11-23

    Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered structures is a rectangle, which includes four group-III atoms and four group-V atoms. A group-III atom and its three nearest-neighbor group-V atoms are placed on the same plane; however, these connections are not the sp{sup 2} hybridization. The bond angles around the group-V atoms are less than the bond angle of sp{sup 3} hybridization. The discovered structure of GaP is an indirect transition semiconductor, while the discovered structures of GaAs, InP, and InAs are direct transition semiconductors. Therefore, the discovered structures of these compounds have the potential of the materials for semiconductor devices, for example, water splitting photocatalysts. The discovered structures may become the most stable structures of monolayers which consist of other materials.

  7. Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Jianwei; Zhang, Yong

    2016-04-01

    When coming to identify new 2D materials, our intuition would suggest us to look from layered instead of 3D materials. However, since graphite can be hypothetically derived from diamond by stretching it along its [111] axis, many 3D materials can also potentially be explored as new candidates for 2D materials. Using a density functional theory, we perform a systematic study over the common Group IV, III–V, and II–VI semiconductors along different deformation paths to reveal new structures that are topologically connected to but distinctly different from the 3D parent structure. Specifically, we explore two major phase transition paths, originating respectively from wurtzite and NiAs structure, by applying compressive and tensile strain along the symmetry axis, and calculating the total energy changes to search for potential metastable states, as well as phonon spectra to examine the structural stability. Each path is found to further split into two branches under tensile strain–low buckled and high buckled structures, which respectively lead to a low and high buckled monolayer structure. Most promising new layered or planar structures identified include BeO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side.

  8. Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors

    PubMed Central

    Wang, Jianwei; Zhang, Yong

    2016-01-01

    When coming to identify new 2D materials, our intuition would suggest us to look from layered instead of 3D materials. However, since graphite can be hypothetically derived from diamond by stretching it along its [111] axis, many 3D materials can also potentially be explored as new candidates for 2D materials. Using a density functional theory, we perform a systematic study over the common Group IV, III–V, and II–VI semiconductors along different deformation paths to reveal new structures that are topologically connected to but distinctly different from the 3D parent structure. Specifically, we explore two major phase transition paths, originating respectively from wurtzite and NiAs structure, by applying compressive and tensile strain along the symmetry axis, and calculating the total energy changes to search for potential metastable states, as well as phonon spectra to examine the structural stability. Each path is found to further split into two branches under tensile strain–low buckled and high buckled structures, which respectively lead to a low and high buckled monolayer structure. Most promising new layered or planar structures identified include BeO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side. PMID:27090430

  9. Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors.

    PubMed

    Wang, Jianwei; Zhang, Yong

    2016-01-01

    When coming to identify new 2D materials, our intuition would suggest us to look from layered instead of 3D materials. However, since graphite can be hypothetically derived from diamond by stretching it along its [111] axis, many 3D materials can also potentially be explored as new candidates for 2D materials. Using a density functional theory, we perform a systematic study over the common Group IV, III-V, and II-VI semiconductors along different deformation paths to reveal new structures that are topologically connected to but distinctly different from the 3D parent structure. Specifically, we explore two major phase transition paths, originating respectively from wurtzite and NiAs structure, by applying compressive and tensile strain along the symmetry axis, and calculating the total energy changes to search for potential metastable states, as well as phonon spectra to examine the structural stability. Each path is found to further split into two branches under tensile strain-low buckled and high buckled structures, which respectively lead to a low and high buckled monolayer structure. Most promising new layered or planar structures identified include BeO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side. PMID:27090430

  10. Local Atomic Structure of Semiconductor Alloys Using Pair Distribution Function Analysis

    SciTech Connect

    Billinge, S.J.L.; Thorpe, M.F.

    2002-06-24

    We have been taking advantage of recent experimental developments, which involve utilizing diffraction data from x-rays or neutrons out to very large wave-vectors, to obtain a detailed structural characterization of semiconductor alloys. This approach allows an accurate Pair Distribution Function (PDF) to be obtained to 20A and beyond and reveals the local structure of the alloy directly. These data can be modeled explicitly to learn about local correlations and short-range order in materials. We are combining theory, modeling and experiments to study a range of materials from semiconductors to thermoelectrics and proton conductors.

  11. Electronic structure of III-V zinc-blende semiconductors from first principles

    NASA Astrophysics Data System (ADS)

    Wang, Yin; Yin, Haitao; Cao, Ronggen; Zahid, Ferdows; Zhu, Yu; Liu, Lei; Wang, Jian; Guo, Hong

    2013-06-01

    For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electronic structures of all III-V zinc-blende semiconductor compounds. Our calculations are from density functional theory with the semilocal exchange proposed recently [Tran and Blaha, Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.102.226401 102, 226401 (2009)], within the linear muffin tin orbital scheme. The calculated band gaps and effective masses are compared to experimental data and good quantitative agreement is obtained. Using the theoretical scheme presented here, quantum transport in nanostructures of III-V compounds can be confidently predicted.

  12. Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

    SciTech Connect

    Sibatov, R. T. Morozova, E. V.

    2015-05-15

    A model of dispersive transport in disordered nanostructured semiconductors has been proposed taking into account the percolation structure of a sample and joint action of several mechanisms. Topological and energy disorders have been simultaneously taken into account within the multiple trapping model on a comb structure modeling the percolation character of trajectories. The joint action of several mechanisms has been described within random walks with a mixture of waiting time distributions. Integral transport equations with fractional derivatives have been obtained for an arbitrary density of localized states. The kinetics of the transient current has been calculated within the proposed new model in order to analyze time-of-flight experiments for nanostructured semiconductors.

  13. Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

    NASA Astrophysics Data System (ADS)

    Sibatov, R. T.; Morozova, E. V.

    2015-05-01

    A model of dispersive transport in disordered nanostructured semiconductors has been proposed taking into account the percolation structure of a sample and joint action of several mechanisms. Topological and energy disorders have been simultaneously taken into account within the multiple trapping model on a comb structure modeling the percolation character of trajectories. The joint action of several mechanisms has been described within random walks with a mixture of waiting time distributions. Integral transport equations with fractional derivatives have been obtained for an arbitrary density of localized states. The kinetics of the transient current has been calculated within the proposed new model in order to analyze time-of-flight experiments for nanostructured semiconductors.

  14. Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors

    NASA Astrophysics Data System (ADS)

    Tas, M.; Şaşıoǧlu, E.; Galanakis, I.; Friedrich, C.; Blügel, S.

    2016-05-01

    Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the G W approximation within the framework of the FLAPW method, we study the quasiparticle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the s p -electron based semiconductors such as Si and GaAs, in these systems, the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2 eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the s p -chemical element.

  15. Fundamental properties and applications of low- dimensional materials

    NASA Astrophysics Data System (ADS)

    Kim, Philip

    1999-11-01

    Physics in reduced dimensions has attracted much attention during the last decades owing to the discovery of new phenomena in low-dimensional materials and their potential importance in device applications. The unique properties of these low dimensional materials have been generally understood by considering the increased role of fluctuations and singularities in physical quantities due to the reduction in available phase space. In this thesis, I have investigated the fundamental physical properties of several low dimensional materials and have presented a technological application of these materials. Magnetic flux lines in high temperature superconductors (HTSCs) can be effectively treated as 2+1 dimensional systems due to the large anisotropy of HTSCs. The microscopic structure of the magnetic flux line lattice in Bi 2Sr2CaCu2O8 + x superconducting single crystals was studied at temperatures up to 77 K by Bitter magnetic decoration technique. Analysis of structural correlations shows that the flux line lattices are in the hexatic phase for the high temperature and low field regime, and enables us to estimate the flux line lattice freezing temperature. In addition, dislocation-free decoration images containing up to 80,000 vortices, which are two orders of magnitude larger number than that of previous studies, have been obtained. Analyses of these large length new data shows that the observed flux line lattices are in the random manifold regime with a roughening exponent of 0.44 for length scales up to 80-100 lattice constants. At larger length scales, the data exhibit nonequilibrium features that persist for different cooling rates and field histories. Charge density waves in transition-metal dichalcogenides are a good example of a two dispensional electronic system. A scanning tunneling microscope (STM) was used to fabricate T-phase tantalum diselenide (TaSe2) nanocrystals with sizes ranging from 7 to more than 100 nanometers within the surface layer of 2H phase

  16. Control of the crystalline structure of inkjet-printed semiconductor layers using overlap condition and surface wettability

    NASA Astrophysics Data System (ADS)

    Kang, Byung Ju; Oh, Je Hoon

    2015-05-01

    We demonstrate the effects of overlap condition and surface wettability of dielectric layers on the drying process and crystalline structure of inkjet-printed semiconductor layers. 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) was utilized to inkjet-print the semiconductor layer. Using various overlap conditions, semiconductor layers were inkjet-printed on dielectric layers with different surface wettabilities. It is observed that crystal growth and the resulting crystalline structures in inkjet-printed semiconductor layers are primarily determined by evaporation behavior, particularly the contact line movement of the drying semiconductor layers, which can be controlled via the overlap condition. With inappropriate overlap conditions, randomly oriented TIPS pentacene crystalline structures are generated in the semiconductor layer through irregular contact line recession. One-dimensionally oriented TIPS pentacene crystal structures can be obtained using the optimized overlap condition of 50% as a result of the uniform contact line movement. Relatively hydrophobic dielectric layers help to generate good crystallinity in the semiconductor layer. All-inkjet-printed organic thin film transistors (OTFTs) with well-oriented TIPS pentacene crystalline structures in the semiconductor layer show a high field effect mobility of ~0.1 cm2 V-1s-1, suggesting that, when printing inkjet semiconductor layers, the overlap condition and surface wettability of the dielectric layer are important factors for generating a well-oriented crystalline structure and thereby fabricating high-performance all-inkjet-printed OTFTs.

  17. Structure-Dependent Spin Polarization in Polymorphic CdS:Y Semiconductor Nanocrystals.

    PubMed

    Wang, Pan; Xiao, Bingxin; Zhao, Rui; Ma, Yanzhang; Zhang, Mingzhe

    2016-03-01

    Searching for the polymorphic semiconductor nanocrystals would provide precise and insightful structure-spin polarization correlations and meaningful guidance for designing and synthesizing high spin-polarized spintronic materials. Herein, the high spin polarization is achieved in polymorphic CdS:Y semiconductor nanocrystals. The high-pressure polymorph of rock-salt CdS:Y nanocrystals has been recovered at ambient conditions synthesized by the wurtzite CdS:Y nanocrystals as starting material under 5.2 GPa and 300 °C conditions. The rock-salt CdS:Y polymorph displays more robust room-temperature ferromagnetism than wurtzite sample, which can reach the ferromagnetic level of conventional semiconductors doped with magnetic transition-metal ions, mainly due to the significantly enhanced spin configuration and defect states. Therefore, crystal structure directly governs the spin configuration, which determines the degree of spin polarization. This work can provide experimental and theoretical methods for designing the high spin-polarized semiconductor nanocrystals, which is important for applications in semiconductor spintronics. PMID:26905093

  18. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOEpatents

    Spahn, O.B.; Lear, K.L.

    1998-03-10

    The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

  19. Optical Properties of Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gaponenko, S. V.

    1998-10-01

    Low-dimensional semiconductor structures, often referred to as nanocrystals or quantum dots, exhibit fascinating behavior and have a multitude of potential applications, especially in the field of communications. This book examines in detail the optical properties of these structures, gives full coverage of theoretical and experimental results, and discusses their technological applications. The author begins by setting out the basic physics of electron states in crystals (adopting a "cluster-to-crystal" approach), and goes on to discuss the growth of nanocrystals, absorption and emission of light by nanocrystals, optical nonlinearities, interface effects, and photonic crystals. He illustrates the physical principles with references to actual devices such as novel light-emitters and optical switches. The book covers a rapidly developing, interdisciplinary field. It will be of great interest to graduate students of photonics or microelectronics, and to researchers in electrical engineering, physics, chemistry, and materials science.

  20. Characterization of low dimensional molybdenum sulfide nanostructures

    SciTech Connect

    Camacho-Bragado, G. Alejandra; Elechiguerra, Jose Luis; Yacaman, Miguel Jose

    2008-03-15

    It is presented a detailed structural characterization of a nanostructured form of molybdenum disulfide. The material consists of a layer of highly textured molybdenum sulfide growing off a molybdenum dioxide core. The structure and chemical composition of the synthesized nanostructured sulfide was compared to two well-known forms of molybdenum disulfide, i.e. a commercial molybdenite sample and a poorly crystalline sulfide. X-ray diffraction, high-resolution electron microscopy and electron diffraction showed that the material reported here presents crystalline nanodomains with a crystal structure corresponding to the 2H polytype of molybdenum disulfide. X-ray photoelectron spectroscopy was used to demonstrate the differences between our sulfide and other materials such as amorphous MoS{sub 3}, oxysulfides and poorly crystalline MoS{sub 2}, corroborating the molybdenite-2H stacking in this form of sulfide. The material under study showed a high proportion of crystalline planes different from the basal plane.

  1. Electronic structures of interfacial states formed at polymeric semiconductor heterojunctions

    NASA Astrophysics Data System (ADS)

    Huang, Ya-Shih; Westenhoff, Sebastian; Avilov, Igor; Sreearunothai, Paiboon; Hodgkiss, Justin M.; Deleener, Caroline; Friend, Richard H.; Beljonne, David

    2008-06-01

    Heterojunctions between organic semiconductors are central to the operation of light-emitting and photovoltaic diodes, providing respectively for electron-hole capture and separation. However, relatively little is known about the character of electronic excitations stable at the heterojunction. We have developed molecular models to study such interfacial excited electronic excitations that form at the heterojunction between model polymer donor and polymer acceptor systems: poly(9,9-dioctylfluorene-co-bis-N,N-(4-butylphenyl)-bis-N,N-phenyl-1,4-phenylenediamine) (PFB) with poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), and poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB) with F8BT. We find that for stable ground-state geometries the excited state has a strong charge-transfer character. Furthermore, when partly covalent, modelled radiative lifetimes (~10-7s) and off-chain axis polarization (30∘) match observed `exciplex' emission. Additionally for the PFB:F8BT blend, geometries with fully ionic character are also found, thus accounting for the low electroluminescence efficiency of this system.

  2. Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

    PubMed Central

    Schlesinger, R.; Bianchi, F.; Blumstengel, S.; Christodoulou, C.; Ovsyannikov, R.; Kobin, B.; Moudgil, K.; Barlow, S.; Hecht, S.; Marder, S.R.; Henneberger, F.; Koch, N.

    2015-01-01

    The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach. PMID:25872919

  3. Light-induced resistive switching in silicon-based metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N.; Antonov, I. N.; Kasatkin, A. P.

    2016-05-01

    We have studied light-induced resistive switching in metal-insulator-semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.

  4. Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

    NASA Astrophysics Data System (ADS)

    Schlesinger, R.; Bianchi, F.; Blumstengel, S.; Christodoulou, C.; Ovsyannikov, R.; Kobin, B.; Moudgil, K.; Barlow, S.; Hecht, S.; Marder, S. R.; Henneberger, F.; Koch, N.

    2015-04-01

    The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach.

  5. Technique for measuring the Cooper-pair velocity, density, and mass using Doppler splitting of the plasmon resonance in low-dimensional superconductor microstructures

    SciTech Connect

    Mishonov, T.M. )

    1994-08-01

    The creation of a Cooper-pair mass spectroscopy is suggested. The plasmons in low-dimensional superconductor structures (layers or wires in the dielectric background) are theoretically considered for this purpose. The Cooper-pair mass [ital m][sup *] (the parameter [ital m][sup *] in London electrodynamics) can be determined by measurements of the Doppler shift of the plasmon frequency when a direct current is applied through the superconductor. The plasmons with frequency [omega] lower than the superconducting gap 2[Delta] can be detected by the same far-infrared absorption technique and grating coupling used previously for investigation of two-dimensional plasmons in semiconductor microstructures and polaritons in condensed-matter physics.

  6. Semiconductor structural damage attendant to contact formation in III-V solar cells

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Weizer, Victor G.

    1991-01-01

    In order to keep the resistive losses in solar cells to a minimum, it is often necessary for the ohmic contacts to be heat treated to lower the metal-semiconductor contact resistivity to acceptable values. Sintering of the contacts, however can result in extensive mechanical damage of the semiconductor surface under the metallization. An investigation of the detailed mechanisms involved in the process of contact formation during heat treatment may control the structural damage incurred by the semiconductor surface to acceptable levels, while achieving the desired values of contact resistivity for the ohmic contacts. The reaction kinetics of sintered gold contacts to InP were determined. It was found that the Au-InP interaction involves three consecutive stages marked by distinct color changes observed on the surface of the Au, and that each stage is governed by a different mechanism. A detailed description of these mechanisms and options to control them are presented.

  7. SEMICONDUCTOR DEVICES: Trench gate IGBT structure with floating P region

    NASA Astrophysics Data System (ADS)

    Mengliang, Qian; Zehong, Li; Bo, Zhang; Zhaoji, Li

    2010-02-01

    A new trench gate IGBT structure with a floating P region is proposed, which introduces a floating P region into the trench accumulation layer controlled IGBT (TAC-IGBT). The new structure maintains a low on-state voltage drop and large forward biased safe operating area (FBSOA) of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage. In addition, it enlarges the short circuit safe operating area (SCSOA) of the TAC-IGBT, and is simple in fabrication and design. Simulation results indicate that, for IGBT structures with a breakdown voltage of 1200 V, the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.

  8. Low-dimensional dynamics of resting-state cortical activity.

    PubMed

    Mehrkanoon, Saeid; Breakspear, Michael; Boonstra, Tjeerd W

    2014-05-01

    Endogenous brain activity supports spontaneous human thought and shapes perception and behavior. Connectivity-based analyses of endogenous, or resting-state, functional magnetic resonance imaging (fMRI) data have revealed the existence of a small number of robust networks which have a rich spatial structure. Yet the temporal information within fMRI data is limited, motivating the complementary analysis of electrophysiological recordings such as electroencephalography (EEG). Here we provide a novel method based on multivariate time-frequency interdependence to reconstruct the principal resting-state network dynamics in human EEG data. The stability of network expression across subjects is assessed using resampling techniques. We report the presence of seven robust networks, with distinct topographic organizations and high frequency (∼ 5-45 Hz) fingerprints, nested within slow temporal sequences that build up and decay over several orders of magnitude. Interestingly, all seven networks are expressed concurrently during these slow dynamics, although there is a temporal asymmetry in the pattern of their formation and dissolution. These analyses uncover the complex temporal character of endogenous cortical fluctuations and, in particular, offer an opportunity to reconstruct the low dimensional linear subspace in which they unfold. PMID:24104726

  9. Low dimensional molecular dynamics of water inside a carbon nanotube

    NASA Astrophysics Data System (ADS)

    Shiomi, Junichiro; Lin, Yuan; Amberg, Gustav; Maruyama, Shigeo

    2008-11-01

    While carbon nanotubes (CNTs) have attracted a number of researches as the key building blocks for nanotechnology, they have also caught attentions as ideal materials that realize quasi-one-dimensional channel environment, a key system in bioscience. Such materials stimulate studies in fluid dynamics under low dimensional confinement, which is restricted and departs significantly from that in three-dimension. The current study serves to explore such atomic scale dynamics by performing a series of molecular dynamics (MD) simulations on water confined in a CNT with a diameter of the order of 1 nm. The MD simulations have successfully probed the phase transition of a water cluster confined in a CNT to an ice-nanotube with anomalous diameter dependence. It has also been applied to investigate the possibility of transporting water through a CNT by a temperature gradient. In this study, we particularly highlight the dielectric properties of water confined inside a CNT. The confinement gives rise to strongly anisotropic dielectric relaxation, where the relaxation becomes faster and slower in the cross sectional and axial directions, respectively. The diameter dependences of the dielectric properties are discussed in connection with water dynamics and structures in quasi-one-dimension.

  10. A model for the C-V characteristics of the metal-ferroelectric-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Zhang, Jun Jie; Sun, Jing; Zheng, Xue Jun

    2009-02-01

    A model is developed to describe the characteristics of the metal-ferroelectric-insulator-semiconductor (MFIS) structure based on the dipole switching theory (DST) and the silicon physics of metal-oxide-semiconductor (MOS) structure. The ferroelectric dipole distribution function is used to simulate the history-dependent electric field effect of the ferroelectric layer. Using the model, the thickness effects of the ferroelectric and insulator layers on the capacitance-voltage ( C-V) characteristic and the memory window were investigated for Pt/SBT/ZrO 2/Si and Pt/BLT/MgO/Si structures. All the simulation results show good agreement with the experimental results, indicating that the model is suitable for simulating the C-V characteristic and the memory window of MFIS structure. In addition, the mathematical description is simple and can be easily integrated into the electronic design automation (EDA) software for circuit simulation.

  11. A low dimensional approach on network characterization.

    PubMed

    Li, Benjamin Y S; Zhan, Choujun; Yeung, Lam F; Ko, King T; Yang, Genke

    2014-01-01

    In many applications, one may need to characterize a given network among a large set of base networks, and these networks are large in size and diverse in structure over the search space. In addition, the characterization algorithms are required to have low volatility and with a small circle of uncertainty. For large datasets, these algorithms are computationally intensive and inefficient. However, under the context of network mining, a major concern of some applications is speed. Hence, we are motivated to develop a fast characterization algorithm, which can be used to quickly construct a graph space for analysis purpose. Our approach is to transform a network characterization measure, commonly formulated based on similarity matrices, into simple vector form signatures. We shall show that the [Formula: see text] similarity matrix can be represented by a dyadic product of two N-dimensional signature vectors; thus the network alignment process, which is usually solved as an assignment problem, can be reduced into a simple alignment problem based on separate signature vectors. PMID:25329146

  12. Low dimensional dynamics in birdsong production

    NASA Astrophysics Data System (ADS)

    Amador, Ana; Mindlin, Gabriel B.

    2014-12-01

    The way in which information about behavior is represented at different levels of the motor pathway, remains among the fundamental unresolved problems of motor coding and sensorimotor integration. Insight into this matter is essential for understanding complex learned behaviors such as speech or birdsong. A major challenge in motor coding has been to identify an appropriate framework for characterizing behavior. In this work we discuss a novel approach linking biomechanics and neurophysiology to explore motor control of songbirds. We present a model of song production based on gestures that can be related to physiological parameters that the birds can control. This physical model for the vocal structures allows a reduction in the dimensionality of the behavior, being a powerful approach for studying sensorimotor integration. Our results also show how dynamical systems models can provide insight into neurophysiological analysis of vocal motor control. In particular, our work challenges the actual understanding of how the motor pathway of the songbird systems works and proposes a novel perspective to study neural coding for song production.

  13. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  14. Release strategies for making transferable semiconductor structures, devices and device components

    DOEpatents

    Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

    2014-11-25

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  15. Release strategies for making transferable semiconductor structures, devices and device components

    DOEpatents

    Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J.

    2016-05-24

    Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  16. Release strategies for making transferable semiconductor structures, devices and device components

    DOEpatents

    Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J.

    2011-04-26

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  17. Dynamic colloidal assembly pathways via low dimensional models.

    PubMed

    Yang, Yuguang; Thyagarajan, Raghuram; Ford, David M; Bevan, Michael A

    2016-05-28

    Here we construct a low-dimensional Smoluchowski model for electric field mediated colloidal crystallization using Brownian dynamic simulations, which were previously matched to experiments. Diffusion mapping is used to infer dimensionality and confirm the use of two order parameters, one for degree of condensation and one for global crystallinity. Free energy and diffusivity landscapes are obtained as the coefficients of a low-dimensional Smoluchowski equation to capture the thermodynamics and kinetics of microstructure evolution. The resulting low-dimensional model quantitatively captures the dynamics of different assembly pathways between fluid, polycrystal, and single crystals states, in agreement with the full N-dimensional data as characterized by first passage time distributions. Numerical solution of the low-dimensional Smoluchowski equation reveals statistical properties of the dynamic evolution of states vs. applied field amplitude and system size. The low-dimensional Smoluchowski equation and associated landscapes calculated here can serve as models for predictive control of electric field mediated assembly of colloidal ensembles into two-dimensional crystalline objects. PMID:27250328

  18. Dynamic colloidal assembly pathways via low dimensional models

    NASA Astrophysics Data System (ADS)

    Yang, Yuguang; Thyagarajan, Raghuram; Ford, David M.; Bevan, Michael A.

    2016-05-01

    Here we construct a low-dimensional Smoluchowski model for electric field mediated colloidal crystallization using Brownian dynamic simulations, which were previously matched to experiments. Diffusion mapping is used to infer dimensionality and confirm the use of two order parameters, one for degree of condensation and one for global crystallinity. Free energy and diffusivity landscapes are obtained as the coefficients of a low-dimensional Smoluchowski equation to capture the thermodynamics and kinetics of microstructure evolution. The resulting low-dimensional model quantitatively captures the dynamics of different assembly pathways between fluid, polycrystal, and single crystals states, in agreement with the full N-dimensional data as characterized by first passage time distributions. Numerical solution of the low-dimensional Smoluchowski equation reveals statistical properties of the dynamic evolution of states vs. applied field amplitude and system size. The low-dimensional Smoluchowski equation and associated landscapes calculated here can serve as models for predictive control of electric field mediated assembly of colloidal ensembles into two-dimensional crystalline objects.

  19. Evidence of low-dimensional chaos in magnetized plasma turbulence

    NASA Astrophysics Data System (ADS)

    Živković, T.; Rypdal, K.

    2008-10-01

    We analyze probe data obtained from a toroidal magnetized plasma configuration suitable for studies of low-frequency gradient-driven instabilities. These instabilities give rise to field-aligned convection rolls analogous to Rayleigh-Benard cells in neutral fluids, and may theoretically develop similar routes to chaos. When using mean-field dimension analysis, we observe low dimensionality, but this could originate from either low-dimensional chaos, periodicity or quasi-periodicity. Therefore, we apply recurrence plot analysis as well as estimation of the largest Lyapunov exponent. These analyses provide evidence of low-dimensional chaos, in agreement with theoretical predictions. Our results can be applied to other magnetized plasma configurations, where gradient-driven instabilities dominate the dynamics of the system.

  20. Low-dimensional compounds containing cyano groups. XVII. Crystal structure, spectroscopic, thermal and magnetic properties of [Cu(bmen){sub 2}][Pt(CN){sub 4}] (bmen=N,N'-dimethylethylenediamine)

    SciTech Connect

    Potocnak, Ivan Vavra, Martin; Cizmar, Erik; Kajnakova, Marcela; Radvakova, Alena; Steinborn, Dirk; Zvyagin, Sergei A.; Wosnitza, Jochen; Feher, Alexander

    2009-01-15

    The synthesis, structural analysis, spectroscopic studies, susceptibility and specific-heat measurements of {l_brace}[Cu(bmen){sub 2}][Pt(CN){sub 4}]{r_brace}{sub n} (bmen=N,N'-dimethylethylenediamine) are presented. X-ray crystal-structure analysis revealed that the [Pt(CN){sub 4}]{sup 2-} building blocks are combined with [Cu(bmen){sub 2}]{sup 2+} units to form a chain-like structure along the a axis. The Cu(II) atoms are hexacoordinated by four nitrogen atoms in the equatorial plane belonging to two molecules of bidentate bmen ligands with average Cu-N distance of 2.043(18) A. The axial positions are occupied by two nitrogen atoms from bridging [Pt(CN){sub 4}]{sup 2-} anions at a longer axial Cu-N distance of 2.490(4) A. The compound is characterized by the presence of a weak antiferromagnetic exchange coupling J/k{sub B}=0.6 K. Despite the one-dimensional (1D) character of the structure, the analysis of the magnetic properties and specific heat at very low temperatures shows that [Cu(bmen){sub 2}][Pt(CN){sub 4}] behaves as a two-dimensional (2D) square-lattice Heisenberg magnet with weak interlayer coupling. - Graphical abstract: The synthesis, structural analysis, spectroscopic studies, susceptibility and specific-heat measurements of {l_brace}[Cu(bmen){sub 2}][Pt(CN){sub 4}]{r_brace}{sub n} (bmen=N,N'-dimethylethylenediamine) are presented. X-ray crystal-structure analysis revealed that the [Pt(CN){sub 4}]{sup 2-} building blocks are combined with [Cu(bmen){sub 2}]{sup 2+} units to form a chain-like structure. The compound is characterized by the presence of a weak antiferromagnetic exchange coupling J/k{sub B}=-0.6 K. Despite the one-dimensional character of the structure, the analysis of the magnetic properties and specific heat at very low temperatures shows that [Cu(bmen){sub 2}][Pt(CN){sub 4}] behaves as a two-dimensional square-lattice Heisenberg magnet with weak interlayer coupling.

  1. Observations on ion track structure in semiconductors : a phenomenological study

    NASA Technical Reports Server (NTRS)

    Selva, L. E.; Wallace, R. E.

    2001-01-01

    An ion track structure model at the nanometer scale is presented. The model is based on electrostatic principles and is supported by observed experimental results conducted on power MOSFETs. The model predicts the existence of a transient induced electric field following the passage of an energetic heavy ion. There are two segments to the field (a radial and an axial component). It is the interaction of this transient electric field with the local environment that can trigger a catastrophic failure.

  2. Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors

    NASA Astrophysics Data System (ADS)

    Schöll, Eckehard

    2005-08-01

    Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. This volume deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. It bridges the gap between two well-established fields: the theory of dynamic systems and nonlinear charge transport in semiconductors. This unified approach helps reveal important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, such as current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

  3. Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors

    NASA Astrophysics Data System (ADS)

    Schöll, Eckehard

    2001-02-01

    Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. This volume deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. It bridges the gap between two well-established fields: the theory of dynamic systems and nonlinear charge transport in semiconductors. This unified approach helps reveal important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, such as current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

  4. Coupling of Semiconductor Nanowires with Neurons and Their Interfacial Structure

    NASA Astrophysics Data System (ADS)

    Lee, Ki-Young; Shim, Sojung; Kim, Il-Soo; Oh, Hwangyou; Kim, Sunoh; Ahn, Jae-Pyeong; Park, Seung-Han; Rhim, Hyewhon; Choi, Heon-Jin

    2010-02-01

    We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron-nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft.

  5. Dynamics of carrier recombination in a semiconductor laser structure

    SciTech Connect

    Dzhioev, R. I. Kavokin, K. V.; Kusrayev, Yu. G.; Poletaev, N. K.

    2015-11-15

    Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τ{sub e} = 5 × 10{sup –9} s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

  6. Low-dimensional compounds containing cyano groups. XIV. Crystal structure, spectroscopic, thermal and magnetic properties of [CuL {sub 2}][Pt(China){sub 4}] complexes (L=ethylenediamine or N,N-dimethylethylenediamine)

    SciTech Connect

    Potocnak, Ivan . E-mail: ivan.potocnak@upjs.sk; Vavra, Martin; Cizmar, Erik; Tibenska, Katarina; Orendacova, Alzbeta; Steinborn, Dirk; Wagner, Christoph; Dusek, Michal; Fejfarova, Karla; Schmidt, Harry; Muller, Thomas; Orendac, Martin; Feher, Alexander

    2006-07-15

    Violet crystals of [Cu(en){sub 2}][Pt(China){sub 4}] and blue crystals of [Cu(dmen){sub 2}][Pt(China){sub 4}] were crystallized from the water-methanol solution containing CuCl{sub 2}.2H{sub 2}O, ethylenediamine (en) or N,N-dimethylethylenediamine (dmen) and K{sub 2}[Pt(China){sub 4}].3H{sub 2}O. Both compounds were characterized using elemental analysis, infrared and UV-VIS spectroscopy, magnetic measurements, specific heat measurements and thermal analysis. X-ray structure analysis revealed chain-like structure in both compounds. The covalent chains are built of Cu(II) ions linked by [Pt(China){sub 4}]{sup 2-} anions in the [111] and [101] direction, respectively. The Cu(II) atoms are hexacoordinated by four nitrogen atoms in the equatorial plane from two molecules of bidentate ligands L with average Cu-N distance of 2.022(2) and 2.049(4) A, respectively. Axial positions are occupied by two nitrogen atoms from bridging [Pt(China){sub 4}]{sup 2-} anions at longer Cu-N distance of 2.537(2) and 2.600(5) A, respectively. Both materials are characterized by the presence of weak antiferromagnetic exchange coupling. Despite the one-dimensional (1D) character of the structure, the analysis of magnetic properties and specific heat at very low temperatures shows that [Cu(en){sub 2}][Pt(China){sub 4}] behaves as two-dimensional (2D) spatially anisotropic square lattice Heisenberg magnet, while more pronounced influence of interlayer coupling is observed in [Cu(dmen){sub 2}][Pt(China){sub 4}]. - Graphical abstract: Chain-like structure in [Cu(en){sub 2}][Pt(China){sub 4}] (R=H) and [Cu(dmen){sub 2}][Pt(China){sub 4}] (R=CH{sub 3}) compounds.

  7. First principles simulations of liquid semiconductors: Electronic, structural and dynamic properties

    NASA Astrophysics Data System (ADS)

    Godlevsky, Vitaliy

    We develop ab initio molecular dynamics simulation technique to examine liquid semiconductors. Our methods use quantum interatomic forces, computed within the pseudopotential-density functional method (PDFM). In our work, we study typical representatives of IV, III-V and II-VI materials: Si, Ge, GaAs and CdTe. We show that, upon melting, IV and III-V semiconductors experience semiconductor → metal transition, while more ionic II-VI compounds remain semiconductors in the melt. Metallic type conductivity of liquid IV and III-V materials results from the structural changes of the systems in the melt. In our simulations, "open" zinc-blende (diamond for Si and Ge) structures transform into a more close-packed configuration during solid → liquid transition. Their coordination number, equal to 4 in the crystalline phase, changes to ˜6 in the liquid. We demonstrate that this leads to the breaking of covalent bonds and delocalization of electrons. According to our results, the density of states function of liquid IV and III-V semiconductors has a well defined "free electron" character. For these materials, the electrical conductivity jumps by one to two orders of magnitude during melting. This is opposite to the behavior of the majority of II-VI compounds. In our work, we examine CdTe, typical II-VI semiconductor. Although the dc conductivity of CdTe increases by a factor of 40 as it melts, this material remains a semiconductor in the liquid: its electrical conductivity increases with the temperature. At variance with IV and III-V semiconductors, liquid CdTe retains its tetrahedral environment with the coordination number of ˜4. We discover that a significant number of anion-cation bonds are conserved in liquid CdTe as opposed to IV and III-V materials. This is in agreement with the small entropy change observed in the melting process of CdTe. In our simulations, we find that further heating of molten CdTe results in significant structural changes with a

  8. First-principles study of the electronic structure of organic semiconductors

    NASA Astrophysics Data System (ADS)

    Sharifzadeh, Sahar; Biller, Ariel J.; Kronik, Leeor; Neaton, Jeffrey B.

    2010-03-01

    Organic semiconductors are promising materials for next generation organic photovoltaics, with the characterization of their spectroscopic properties vital to improving the potential of such technologies. Here, we use density functional theory and many-body perturbation theory within the GW approximation to explore quantitatively the electronic structure of prototypical organic semiconductor crystals and compare directly with valence-band photoemission data. For pentacene and PTCDA, computed gas-phase ionization energies and electron affinities are compared with calculated crystal-phase quasiparticle band structures, and relationships between shifts in orbital energy with change of phase and static polarization of the bulk are discussed and compared with experiment. We acknowledge DOE, NSF, BASF, and ISF for financial support, and NERSC for computational resources.

  9. The electronic structure of graphene tuned by hexagonal boron nitrogen layers: Semimetal-semiconductor transition

    NASA Astrophysics Data System (ADS)

    Liu, Ming-Yang; Chen, Qing-Yuan; Ma, Tai; He, Yao; Cao, Chao

    2016-05-01

    The electronic structure of graphene and hexagonal boron nitrogen (G/h-BN) systems have been carefully investigated using the pseudo-potential plane-wave within density functional theory (DFT) framework. We find that the stacking geometries and interlayer distances significantly affect the electronic structure of G/h-BN systems. By studying four stacking geometries, we conclude that the monolayer G/h-BN systems should possess metallic electronic properties. The monolayer G/h-BN systems can be transited from metallicity to semiconductor by increasing h-BN layers. It reveals that the alteration of interlayer distances 2.50-3.50 Å can obtain the metal-semiconductor-semimetal variation and a tunable band gap for G/h-BN composite systems. The band dispersion along K-H direction is analogous to the band of rhombohedral graphite when the G/h-BN systems are semiconducting.

  10. Magnons in disordered nonstoichiometric low-dimensional magnets

    NASA Astrophysics Data System (ADS)

    Buczek, Paweł; Sandratskii, Leonid M.; Buczek, Nadine; Thomas, Stefan; Vignale, Giovanni; Ernst, Arthur

    2016-08-01

    We study spin excitation spectra of one-, two-, and three-dimensional magnets featuring nonmagnetic defects at a wide range of concentrations. Taking the Heisenberg model as the starting point, we tackle the problem by both direct numerical simulations in large supercells and using a semianalytic coherent-potential approximation. We consider the properties of the excitations in both direct and reciprocal spaces. In the limits of the concentration c of the magnetic atoms tending to 0 or 1 the properties of the spin excitations are similar in all three dimensions. In the case of a low concentration of magnetic atoms the spin excitation spectra are dominated by the modes confined in the real space to single atoms or small clusters and delocalized in the reciprocal space. In the limit of c tending to 1, we obtain the spin-wave excitations delocalized in the real space and localized in the reciprocal space. However, for the intermediate concentrations the properties of the spin excitations are strongly dimensionality dependent. We pay particular attention to the formation, with increase of c , of the Lorentzian-shaped peaks in the spectral densities of the spin excitations, which can be regarded as magnon states with a finite lifetime given by the width of the peaks. In general, low-dimensional magnets are more strongly affected by the presence of nonmagnetic impurities than their bulk counterparts. The details of the electronic structure, varying with the dimensionality and the concentration, substantially influence the spin excitation spectra of real materials, as we show in the example of the FeAl alloy.

  11. Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

    NASA Astrophysics Data System (ADS)

    Flandre, Denis; Nazarov, Alexei N.; Hemment, Peter L. F.

    This book collects the papers presented during NATO Advanced Research Workshop "Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment" held in Kiev 26-30 April 2004. The volume contains both reviews from invited speakers and selected papers presenting major innovations in SOI materials and devices. Particular attention is paid to the reliability of SOI structures operated under harsh conditions. In the first part of the book dealing with SOI material technology, the evolution of SOI materials, achievements in the main standard technologies as Smart Cut, SIMOX, porous silicon as well as methods to create more exotic structures are described.

  12. Electronic Structure of the Organic Semiconductor Copper Tetraphenylporphyrin (CuTPP)

    SciTech Connect

    Reid, I.; Zhang, Y; Demasi, A; Blueser, A; Piper, L; Downes, J; Matsuura, A; Hughes, G; Smith, K

    2009-01-01

    The electronic structure of thin films of the organic semiconductor copper tetraphenylporphyrin (CuTPP) has been studied using synchrotron radiation-excited resonant soft X-ray emission spectroscopy (RSXE), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and X-ray photoemission spectroscopy (XPS). The C and N partial density of states for both the valence and conduction band electronic structure has been determined, while XPS was used to provide information on the chemical composition and the oxidation states of the copper. Good agreement was found between the experimental measurements of the valence and conduction bands and the results of density functional theory calculations.

  13. Electrical properties of hybrid (ferromagnetic metal)-(layered semiconductor) Ni/p-GaSe structures

    SciTech Connect

    Bakhtinov, A. P. Vodopyanov, V. N.; Kovalyuk, Z. D.; Netyaga, V. V.; Lytvyn, O. S.

    2010-02-15

    Two-barrier Ni/n-Ga2Se3/p-GaSe structures with nanoscale Ni-alloy grains caused by reactions at the 'metal-layered semiconductor' interface were formed after growing Ni layers on the p-GaSe (0001) surface. Current-voltage and capacitance-voltage characteristics of hybrid structures were studied in the temperature range of 220-350 K. The dependence of the impedance spectra on the bias voltage was studied at various temperatures. The frequency dependences of the impedance at high frequencies (f = 10{sup 6} Hz) are discussed in terms of the phenomena of spin injection and extraction in structures with an ultrathin spin-selective Ni/n-Ga{sub 2}Se{sub 3} barrier and the effects of spin diffusion and relaxation in the semiconductor substrate. The room-temperature phenomena of the Coulomb blockade and negative differential capacitance were detected. These phenomena are explained based on an analysis of transport processes in a narrow region near the 'ferromagnetic metal-semiconductor' interface, where nanoscale grains are arranged.

  14. Low-dimensional copper(II) complexes with the trinucleating ligand 2,4,6-tris(di-2-pyridylamine)-1,3,5-triazine: synthesis, crystal structures, and magnetic properties.

    PubMed

    Yuste, Consuelo; Cañadillas-Delgado, Laura; Labrador, Ana; Delgado, Fernando S; Ruiz-Pérez, Catalina; Lloret, Francesc; Julve, Miguel

    2009-07-20

    The preparation and structural characterization of three new copper(II) complexes of formula [Cu(3)(dipyatriz)(2)(H(2)O)(3)](ClO(4))(6) x 2 H(2)O (1), {[Cu(4)(dipyatriz)(2)(H(2)O)(2)(NO(3))(2)(ox)(2)](NO(3))(2) x 2 H(2)O}(n) (2), and [Cu(6)(dipyatriz)(2)(H(2)O)(9)(NO(3))(3)(ox)(3)](NO(3))(3) x 4 H(2)O (3) [dipyatriz = 2,4,6-tris(di-2-pyridylamine)-1,3,5-triazine and ox = oxalate] are reported. The structure of 1 consists of trinuclear units [Cu(3)(dipyatriz)(2)(H(2)O)(3)](6+) and uncoordinated perchlorate anions. The two dipyatriz molecules in 1 act as tris-bidentate ligands with the triazine cores being in a quasi eclipsed conformation. Each copper atom in 1 exhibits a distorted square pyramidal geometry CuN(4)O with four pyridyl-nitrogen atoms from two dipyatriz ligands building the basal plane and a water molecule occupying the axial position. The values of the intratrimer copper-copper separation are 8.0755(6) and 8.3598(8) A. Compound 2 exhibits a layered structure of copper(II) ions which are connected through bis-bidentate dipyatriz ligands and bidentate/outer monodentate oxalato groups. The copper atoms in 2 exhibit six- [Cu(1)N(4)O(2)] and five-coordination [Cu(2)N(2)O(3)]. A water molecule and three pyridyl-nitrogen atoms [Cu(1)] and two pyridyl-nitrogen plus two oxalate-oxygen atoms [Cu(2)] define the equatorial plane whereas either an oxalate-oxygen and a pyridyl-nitrogen [Cu(1)] or a nitrate-oxygen [Cu(2)] fill the axial positions. The copper-copper separation through the bridging oxalato is 5.6091(6) A whereas those across dipyatriz vary in the range 7.801(1)-9.079(1) A. The structure of compound 3 contains discrete cage-like hexacopper(II) units [Cu(6)(dipyatriz)(2)(H(2)O)(9)(NO(3))(3)(ox)(3)](3+) where two trinuclear [Cu(3)(dipyatriz)](6+) fragments are connected by three bis-bidentate oxalate ligands, the charge being balanced by three non-coordinated nitrate anions. The values of the intracage copper-copper distance are 5.112(3)-5.149(2) A (across

  15. Magnetic structure of low-dimensional LiCu{sub 2}O{sub 2} multiferroic according to {sup 63,65}Cu and {sup 7}Li NMR studies

    SciTech Connect

    Sadykov, A. F. Gerashchenko, A. P.; Piskunov, Yu. V.; Ogloblichev, V. V.; Smol'nikov, A. G.; Verkhovskii, S. V.; Yakubovskii, A. Yu.; Tishchenko, E. A.; Bush, A. A.

    2012-10-15

    The complex NMR study of the magnetic structure of LiCu{sub 2}O{sub 2} multiferroic has been performed. It has been shown that the spin spirals in LiCu{sub 2}O{sub 2} are beyond the ab, bc, and ac crystallographic planes. The external magnetic field applied along the c axis of the crystal does not change the spatial orientation of spirals in Cu{sup 2+} chains. A magnetic field of H{sub 0} = 94 kOe applied along the a and b axes rotates the planes of spin spirals in chains, tending to orient the normal n of spirals along the external magnetic field. The rotation angle of the planes of the magnetic moments are maximal at H{sub 0} Double-Vertical-Line b.

  16. Low-dimensional CdS/CdTe multiple-quantum well heterostructure for optical refrigeration

    NASA Astrophysics Data System (ADS)

    Tarín-Cordero, Julio C.; Villa-Angulo, Rafael; Villa-Angulo, José R.; Villa-Angulo, Carlos

    2015-01-01

    The major challenge for semiconductors to achieve temperatures below 10 K by luminescence upconversion, is that at these lattice temperatures the acoustic phonon component dominates and the scattering rate becomes comparable to the band-to-band radiative transition rate. This problem can be significantly alleviated by employing quantum-confined systems, where relaxation of wave-vector conservation in the confined direction reduces material conductivity by nearly three orders of magnitude. Although previous studies have reported theoretical and experimental analyses of cooling characteristics for bulk semiconductors, the electron band-to-band transition due to photon absorption or photon emission under cooling conditions in quantum-confined semiconductor systems which exhibit quantum effects at the dimensions of several nanometers have not been completely analyzed in conventional theoretical studies. We realized a numerical investigation of optical cooling conditions for a low-dimensional CdS/CdTe multiple-quantum well heterostructure where injected carriers in the active region are quantum mechanically confined in one dimension. Effects of such quantum mechanically confined carriers on photon absorption and photoluminescence (PL) were analyzed under cooling conditions. Most importantly, the CdS/CdTe heterostructure absorption and PL spectra for cooling conditions were defined in terms of the active layer width and number of quantum wells in the complete heterostructure.

  17. Electronic structure of ferromagnetic semiconductor material on the monoclinic and rhombohedral ordered double perovskites La{sub 2}FeCoO{sub 6}

    SciTech Connect

    Fuh, Huei-Ru; Chang, Ching-Ray; Weng, Ke-Chuan; Wang, Yin-Kuo

    2015-05-07

    Double perovskite La{sub 2}FeCoO{sub 6} with monoclinic structure and rhombohedra structure show as ferromagnetic semiconductor based on density functional theory calculation. The ferromagnetic semiconductor state can be well explained by the superexchange interaction. Moreover, the ferromagnetic semiconductor state remains under the generalized gradient approximation (GGA) and GGA plus onsite Coulomb interaction calculation.

  18. Low-dimensional compounds containing bioactive ligands. Part VI: Synthesis, structures, in vitro DNA binding, antimicrobial and anticancer properties of first row transition metal complexes with 5-chloro-quinolin-8-ol.

    PubMed

    Potočňák, Ivan; Vranec, Peter; Farkasová, Veronika; Sabolová, Danica; Vataščinová, Michaela; Kudláčová, Júlia; Radojević, Ivana D; Čomić, Ljiljana R; Markovic, Bojana Simovic; Volarevic, Vladislav; Arsenijevic, Nebojsa; Trifunović, Srećko R

    2016-01-01

    A series of new 3d metal complexes with 5-chloro-quinolin-8-ol (ClQ), [Mn(ClQ)2] (1), [Fe(ClQ)3] (2), [Co(ClQ)2(H2O)2] (3), [Ni(ClQ)2(H2O)2] (4), [Cu(ClQ)2] (5), [Zn(ClQ)2(H2O)2] (6), [Mn(ClQ)3]·DMF (7) and [Co(ClQ)3]·DMF·(EtOH)0.35 (8) (DMF=N,N-dimethylformamide), has been synthesized and characterized by elemental analysis, IR spectroscopy and TG-DTA thermal analysis. X-ray structure analysis of 7 and 8 revealed that these molecular complexes contain three chelate ClQ molecules coordinated to the central atoms in a deformed octahedral geometry and free space between the complex units is filled by solvated DMF and ethanol molecules. Antimicrobial activity of 1-6 was tested by determining the minimum inhibitory concentration and minimum microbicidal concentration against 12 strains of bacteria and 5 strains of fungi. The intensity of antimicrobial action varies depending on the group of microorganism and can be sorted: 1>ClQ>6>3/4>2>5. Complexes 1-6 exhibit high cytotoxic activity against MDA-MB, HCT-116 and A549 cancer cell lines. Among them, complex 2 is significantly more cytotoxic against MDA-MB cells than cisplatin at all tested concentrations and is not cytotoxic against control mesenchymal stem cells indicating that this complex seems to be a good candidate for future pharmacological evaluation. Interaction of 1-6 with DNA was investigated using UV-VIS spectroscopy, fluorescence spectroscopy and agarose gel electrophoresis. The binding studies indicate that 1-6 can interact with CT-DNA through intercalation; complex 2 has the highest binding affinity. Moreover, complexes 1-6 inhibit the catalytic activity of topoisomerase I. PMID:26600190

  19. Mechanical characterization of low dimensional nanomaterials and polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Gao, Hongsheng

    This research was aimed to characterize the mechanical properties of low dimensional nanomaterials and polymer nanocomposites, and to study the reinforcing mechanisms of nanoscale reinforcements. The nanomaterials studied were zero-dimensional nanomaterial--cuprous oxide (Cu2O) nanocubes, one-dimensional nanomaterials--silver nanowires and silicon oxide (SiO2) nanowires, and two-dimensional nanomaterial--nanometer-thick montmorillonite clay platelets. The hardness and elastic moduli of solid Cu 2O nanocubes and silver nanowires were measured by directly indenting individual cubes/wires using a nanoindenter. The elastic modulus of amorphous SiO2 nanowires was measured by performing three-point bending on suspended wires with an atomic force microscope (AFM) tip. The elastic modulus of the nanometer-thick clay platelets was assessed by the modulus mapping technique. An array of nanoscale indents was successfully made on a nanowire. The nanowires were cut to the length as needed. The nanoindentation approach permits the direct machining of individual nanowires without complications of conventional lithography. The nanomechanical properties of single-walled carbon nanotube (SWCNT)-reinforced epoxy composites with varying nanotube concentrations were measured by nanoindentation/nanoscratch techniques. Hardness and elastic modulus were measured using a nanoindenter. Viscoelastic properties of the nanocomposites were measured using nanoindentation dynamic mechanical analysis tests. The SWCNT reinforcing mechanisms were further studied by both Halpin-Tsai and Mori-Tanaka theories, which were found applicable to SWCNT-reinforced, amorphous-polymer composites. The possible reinforcing mechanisms that work in polymer-SWCNT composites and reasons responsible for SWCNTs' low mechanical reinforcement were analyzed. Nanoclay-reinforced agarose nanocomposites with varying clay concentrations were structurally and mechanically characterized. Structural characterization was carried

  20. INTRODUCTION: Physics of Low-dimensional Systems: Nobel Symposium 73

    NASA Astrophysics Data System (ADS)

    Lundqvist, Stig

    1989-01-01

    The physics of low-dimensional systems has developed in a remarkable way over the last decade and has accelerated over the last few years, in particular because of the discovery of the new high temperature superconductors. The new developments started more than fifteen years ago with the discovery of the unexpected quasi-one-dimensional character of the TTF-TCNQ. Since then the field of conducting quasi-one-dimensional organic systems have been rapidly growing. Parallel to the experimental work there has been an important theoretical development of great conceptual importance, such as charge density waves, soliton-like excitations, fractional charges, new symmetry properties etc. A new field of fundamental importance was the discovery of the Quantum Hall Effect in 1980. This field is still expanding with new experimental and theoretical discoveries. In 1986, then, came the totally unexpected discovery of high temperature superconductivity which started an explosive development. The three areas just mentioned formed the main themes of the Symposium. They do not in any way exhaust the progress in low-dimensional physics. We should mention the recent important development with both two-dimensional and one-dimensional and even zero-dimensional structures (quantum dots). The physics of mesoscopic systems is another important area where the low dimensionality is a key feature. Because of the small format of this Symposium we could unfortunately not cover these areas. A Nobel Symposium provides an excellent opportunity to bring together a group of prominent scientists for a stimulating exchange of new ideas and results. The Nobel Symposia are very small meetings by invitation only and the number of key international participants is typically in the range 25-40. These Symposia are arranged through a special Nobel Symposium Committee after proposal from individuals. This Symposium was sponsored by the Nobel Foundation through its Nobel Symposium Fund with grants from The

  1. Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches

    SciTech Connect

    Zakharov, A. Yu.

    2015-07-15

    Methods of predicting the electronic structure of disordered semiconductor alloys involving mainly isoelectronic substitution are reviewed. Special emphasis is placed on analytical methods of studying currently available models of alloys. An approximate equation for the localization threshold of electronic states in the Lifshitz model is considered, and the inaccuracy of this equation is estimated. The contributions of the perturbation potential of an individual impurity and of crystal-lattice distortions in the vicinity of the impurity center are analyzed on the basis of the Faddeev equations. The contributions of intrinsic impurity potentials and volume effects to the formation of the electronic structure of semiconductor alloys are esti- mated. Methods of calculating matrix elements of the perturbation potentials of isoelectronic impurities in alloys with consideration for deformation effects are considered. The procedure of calculating the compositional dependence of the band gap of multicomponent alloys is described. A comparative analysis of various methods for predicting the formation of electronic states bound at individual isoelectronic impurities in semiconductors is conducted. The theory of the energy spectrum of charged impurities in isoelectronic alloys is presented.

  2. Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors

    SciTech Connect

    Mehrabova, M. A. Madatov, R. S.

    2011-08-15

    The Green's functions theory and the bond-orbital model are used as a basis for calculations of the electron structure of local defects-specifically, vacancies and their compensated states in III-VI semiconductors. The energy levels in the band gap are established, and the changes induced in the electron densities in the GaS, GaSe, and InSe semiconductors by anion and cation vacancies and their compensated states are calculated. It is established that, if a vacancy is compensated by an atom of an element from the same subgroup with the same tetrahedral coordination and if the ionic radius of the compensating atom is smaller than that of the substituted atom, the local levels formed by the vacancy completely disappear. It is shown that this mechanism of compensation of vacancies provides a means not only for recovering the parameters of the crystal, but for improving the characteristics of the crystal as well.

  3. Structurally controllable spin spatial splitter in a hybrid ferromagnet and semiconductor nanostructure

    SciTech Connect

    Lu, Mao-Wang Cao, Xue-Li; Huang, Xin-Hong; Jiang, Ya-Qing; Li, Shuai

    2014-05-07

    We theoretically investigate modulation of a tunable δ-potential to the lateral displacement of electrons across a magnetically modulated semiconductor nanostructure. Experimentally, this nanostructure can be produced by depositing a nanosized ferromagnetic stripe with in-plane magnetization on top of a semiconductor heterostructure, while the δ-potential can be realized by means of the atomic layer doping technique. Theoretical analysis reveals that this δ-doping can break the intrinsic symmetry in nanostructure and a considerable spin polarization in the lateral displacement will appear. Numerical calculations demonstrate that both magnitude and sign of spin polarization can be manipulated by changing the height and/or position of the δ-doping, giving rise to a structurally tunable spin spatial splitter.

  4. Long Range Modification of a Metal Surface Electronic Structure by an Organic Semiconductor

    NASA Astrophysics Data System (ADS)

    Wang, Jingying; Dougherty, Daniel

    2015-03-01

    In an organic spintronic device the interaction between electrode surface and organic semiconductor layer plays an important role in spin injection at this interface. The antiferromagnetic material Cr(001) is known to have a spin-polarized state near Fermi level that could potentially hybridize with organic molecules. Here we report our STM/STS study of electronic structure at interface between an organic semiconductor, PTCDA, and Cr(001) surface. The study shows that the surface state at Fermi level of Cr(001) can be broadened by PTCDA molecules deposited on the surface due to hybridization of PTCDA molecular orbital and conduction sp band of Cr(001). This indirect modification is not only localized at molecular adsorption sites, but also extends several nm to bare surrounding Cr(001) surface and decays with distance away from PTCDA molecules.

  5. Low-dimensional ScO2 with tunable electronic and magnetic properties: first-principles studies

    NASA Astrophysics Data System (ADS)

    Zhang, Hui; Tong, Chuan-Jia; Wu, Jian; Yin, Wen-Jin; Zhang, Yan-Ning

    2016-01-01

    Transition metal dichalcogenides (TMDs) have attracted extensive attention due to their appealing properties for device applications. In this work, we explored the structure stability, electronic structure and magnetism of low-dimensional scandium dioxides, ScO2, by using the first-principles calculations. The results demonstrate that bulk ScO2, monolayers and nanoribbons (NRs) are thermodynamically stable, implying a high possibility of fabricating ScO2 nanocrystals in experiments. Despite the metallic characteristics of bulk ScO2, low-dimensional ScO2 possesses various electronic behaviors that can be further modulated by crystal structure and dimensionality. The results also show that the ground states of ScO2 monolayers and NRs are ferromagnetic (FM) with about 1 μ B per ScO2 formula. Our studies expand a new realm in low-dimensional TMDs, with tunable electronic and magnetic properties.

  6. Development of plenoptic infrared camera using low dimensional material based photodetectors

    NASA Astrophysics Data System (ADS)

    Chen, Liangliang

    Infrared (IR) sensor has extended imaging from submicron visible spectrum to tens of microns wavelength, which has been widely used for military and civilian application. The conventional bulk semiconductor materials based IR cameras suffer from low frame rate, low resolution, temperature dependent and highly cost, while the unusual Carbon Nanotube (CNT), low dimensional material based nanotechnology has been made much progress in research and industry. The unique properties of CNT lead to investigate CNT based IR photodetectors and imaging system, resolving the sensitivity, speed and cooling difficulties in state of the art IR imagings. The reliability and stability is critical to the transition from nano science to nano engineering especially for infrared sensing. It is not only for the fundamental understanding of CNT photoresponse induced processes, but also for the development of a novel infrared sensitive material with unique optical and electrical features. In the proposed research, the sandwich-structured sensor was fabricated within two polymer layers. The substrate polyimide provided sensor with isolation to background noise, and top parylene packing blocked humid environmental factors. At the same time, the fabrication process was optimized by real time electrical detection dielectrophoresis and multiple annealing to improve fabrication yield and sensor performance. The nanoscale infrared photodetector was characterized by digital microscopy and precise linear stage in order for fully understanding it. Besides, the low noise, high gain readout system was designed together with CNT photodetector to make the nano sensor IR camera available. To explore more of infrared light, we employ compressive sensing algorithm into light field sampling, 3-D camera and compressive video sensing. The redundant of whole light field, including angular images for light field, binocular images for 3-D camera and temporal information of video streams, are extracted and

  7. The structure study of thin semiconductor and dielectric films by diffraction of synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Yurjev, G. S.; Fainer, N. I.; Maximovskiy, E. A.; Kosinova, M. L.; Sheromov, M. A.; Rumyantsev, Yu. M.

    1998-02-01

    The structure of semiconductor and dielectric thin (100-300 nm) films was studied by diffraction of synchrotron radiation. The diffraction experiments were performed at both the station "Anomalous scattering" of the storage ring synchrotron facility VEPP-3 and DRON-4 diffractometer. The structure of CdS thin films grown on fused silica, single Si(100) and InP(100) substrates was investigated. The structure of Cu 2S thin films grown on fused silica, single Si(100) substrates and CdS/Si(100)-heterostructure was studied. The structure study was performed on Si 3N 4 films grown on GaAs(100) substrates. The structure of thin BN layers grown on single Si(100) substrates was studied. It was established that structural parameters of above-mentioned thin films coincide on the parameters of JCPDS International Centre for Diffraction Data.

  8. Unusual nonlinear current-voltage characteristics of a metal-intrinsic semiconductor-metal barrierless structure

    NASA Astrophysics Data System (ADS)

    Meriuts, A. V.; Gurevich, Yu. G.

    2015-03-01

    A nonlinear model for the electric current in a metal-intrinsic semiconductor-metal structure without potential barriers in contacts is considered using a drift diffusion approach. An analytical solution of the continuity equations and the current-voltage characteristic for various recombination rates in the contacts are obtained. It is shown that the current-voltage characteristics of such a structure exhibit not only linear behavior, corresponding to Ohm's law, but may also possess properties of current-voltage characteristics of the rectifier diode. It is also possible current-voltage characteristics with saturation in both forward and backward directions. Physical model that explains the obtained results is proposed.

  9. Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

    SciTech Connect

    Schnohr, C. S.

    2015-09-15

    Compound semiconductor alloys such as In{sub x}Ga{sub 1−x}As, GaAs{sub x}P{sub 1−x}, or CuIn{sub x}Ga{sub 1−x}Se{sub 2} are increasingly employed in numerous electronic, optoelectronic, and photonic devices due to the possibility of tuning their properties over a wide parameter range simply by adjusting the alloy composition. Interestingly, the material properties are also determined by the atomic-scale structure of the alloys on the subnanometer scale. These local atomic arrangements exhibit a striking deviation from the average crystallographic structure featuring different element-specific bond lengths, pronounced bond angle relaxation and severe atomic displacements. The latter, in particular, have a strong influence on the bandgap energy and give rise to a significant contribution to the experimentally observed bandgap bowing. This article therefore reviews experimental and theoretical studies of the atomic-scale structure of III-V and II-VI zincblende alloys and I-III-VI{sub 2} chalcopyrite alloys and explains the characteristic findings in terms of bond length and bond angle relaxation. Different approaches to describe and predict the bandgap bowing are presented and the correlation with local structural parameters is discussed in detail. The article further highlights both similarities and differences between the cubic zincblende alloys and the more complex chalcopyrite alloys and demonstrates that similar effects can also be expected for other tetrahedrally coordinated semiconductors of the adamantine structural family.

  10. Band-structure calculations for semiconductors within generalized-density-functional theory

    NASA Astrophysics Data System (ADS)

    Remediakis, I. N.; Kaxiras, Efthimios

    1999-02-01

    We present band-structure calculations of several semiconductors and insulators within the framework of density-functional theory in the local-density approximation (DFT/LDA), employing the correction for excited states proposed by Fritsche and co-workers. We applied the method to examine typical elemental (C,Si,Ge), compound group-IV (SiC, SiGe, GeC) and compound III-IV semiconductors (AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, InSb), and examined in detail the approximations involved in the conduction-band energy correction. This quite simple method (referred to as generalized density-functional theory), while not a substitute for more rigorous theoretical approaches such as the GW method, gives results in reasonable agreement with experiment. Thus, it makes possible the calculation of semiconductor band gaps with the computational effort of a DFT/LDA calculation, at least for systems where more elaborate methods are not readily applicable.

  11. The control of stoichiometry in Epitaxial semiconductor structures. Interfacial Chemistry: Property relations. A workshop review

    NASA Technical Reports Server (NTRS)

    Bachmann, Klaus J.

    1995-01-01

    A workshop on the control of stoichiometry in epitaxial semiconductor structures was held on August 21-26, 1995 in the hotel Stutenhaus at Vesser in Germany. The secluded location of the workshop in the forest of Thuringia and its informal style stimulated extensive private discussions among the participants and promoted new contacts between young scientists from Eastern and Western Europe and the USA. Topics addressed by the presentations were interactions of precursors to heteroepitaxy and doping with the substrate surface, the control of interfacial properties under the conditions of heteroepitaxy for selected materials systems, methods of characterization of interfaces and native point defects in semiconductor heterostructures and an in depth evaluation of the present status of the control and characterization of the point defect chemistry for one specific semiconductor (ZnGeP2), including studies of both heterostructures and bulk single crystals. The selected examples of presentations and comments given here represent individual choices - made by the author to highlight major points of the discussions.

  12. Spatial and Temporal Low-Dimensional Models for Fluid Flow

    NASA Technical Reports Server (NTRS)

    Kalb, Virginia

    2008-01-01

    A document discusses work that obtains a low-dimensional model that captures both temporal and spatial flow by constructing spatial and temporal four-mode models for two classic flow problems. The models are based on the proper orthogonal decomposition at two reference Reynolds numbers. Model predictions are made at an intermediate Reynolds number and compared with direct numerical simulation results at the new Reynolds number.

  13. Empirical low-dimensional manifolds in composition space

    NASA Astrophysics Data System (ADS)

    Yang, Yue; Pope, Stephen B.; Chen, Jacqueline H.

    2012-11-01

    To reduce the computational cost of turbulent combustion simulations with a detailed chemical mechanism, it is useful to find a low-dimensional manifold in composition space that can approximate the full system dynamics. Most previous low-dimensional manifolds in turbulent combustion are based on the governing conservation equations or thermochemistry and their application involves certain assumptions. On the other hand, empirical low-dimensional manifolds (ELDMs) are constructed based on samples of the compositions observed in experiments or in direct numerical simulation (DNS). Plane and curved ELDMs can be obtained using principal component analysis (PCA) and multivariate adaptive spline regression (MARS), respectively. Both PCA and MARS are applied to the DNS datasets of a non-premixed CO/H2 temporally evolving jet flame (Hawkes et al., 2007) and an ethylene lifted jet flame (Yoo et al., 2011). We observe that it requires very high dimensions to represent the species mass fractions accurately by a plane ELDM, while better accuracy can be achieved by curved ELDMs with lower dimensions. In addition, the effect of differential diffusion on ELDMs is examined in large-eddy simulations with PDF modeling. This work is supported in part by the Combustion Energy Frontier Research Center funded by the DOE.

  14. Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

    PubMed Central

    Li, Yao; Duerloo, Karel-Alexander N.; Wauson, Kerry; Reed, Evan J.

    2016-01-01

    Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for MoxW1−xTe2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices. PMID:26868916

  15. Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating.

    PubMed

    Li, Yao; Duerloo, Karel-Alexander N; Wauson, Kerry; Reed, Evan J

    2016-01-01

    Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for Mo(x)W(1-x)Te2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices. PMID:26868916

  16. Structural, elastic, electronic and optical properties of new layered semiconductor BaGa2P2

    NASA Astrophysics Data System (ADS)

    Bouhemadou, A.; Khenata, R.; Bin-Omran, S.; Murtaza, G.; Al-Douri, Y.

    2015-08-01

    We report the results of a detailed first-principles based density functional theory study of the structural, elastic, electronic and optical properties of a recently synthesized layered semiconductor BaGa2P2. The optimized structural parameters are in excellent agreement with the experimental structural findings, which validates the used theoretical method. The single crystal and polycrystalline elastic constants are numerically estimated using the strain-stress method and Voigt-Reuss-Hill approximations. Predicted values of the elastic constants suggest that the considered material is mechanically stable, brittle and very soft material. The three-dimensional surface and its planar projections of Young's modulus are visualized to illustrate the elastic anisotropy. It is found that Young's modulus of BaGa2P2 show strong dependence on the crystallographic directions. Band structure calculation reveals that BaGa2P2 is a direct energy band gap semiconductor. The effective masses of electrons and holes at the minimum of the conduction band and maximum of the valence band are numerically estimated. The density of state, charge density distribution and charge transfers are calculated and analyzed to determine the chemical bonding nature. Dielectric function, refractive index, extinction coefficient, absorption coefficient, reflectivity and electron-loss energy function spectra are computed for a wide photon energy range up to 20 eV. Calculated optical spectra exhibit a noticeable anisotropy.

  17. Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

    NASA Astrophysics Data System (ADS)

    Li, Yao; Duerloo, Karel-Alexander N.; Wauson, Kerry; Reed, Evan J.

    2016-02-01

    Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for MoxW1-xTe2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices.

  18. Comparison of the coherence properties of superradiance and laser emission in semiconductor structures

    SciTech Connect

    Vasil'ev, Petr P; Penty, R V; White, I H

    2012-12-31

    The coherence properties of a transient electron - hole state developing during superradiance emission in semiconductor laser structures have been studied experimentally using a Michelson interferometer and Young's classic double-slit configuration. The results demonstrate that, in the lasers studied, the first-order correlation function, which quantifies spatial coherence, approaches unity for superradiant emission and is 0.2 - 0.5 for laser emission. The supercoherence is due to long-range ordering upon the superradiant phase transition. (special issue devoted to the 90th anniversary of n.g. basov)

  19. Soft x-ray spectroscopic studies of the electronic structure of organic semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Yufeng

    Organic semiconductors have several unique properties, different from traditional inorganic semiconductors, such as flexibility and low cost production on a large scale. Potentially, they can be used in several new optoelectronic devices, such as organic solar cells, and organic light-emitting devices (OLEDs) Phthalocyanines (Pc's) are one important type of molecular organic semiconductor. The ease with which a diverse set of cations can bond to the phthalocyanine ligand leads to Pc-based thin films that display a wide variety of optical and electrical properties. In these materials, the ligand has a complex electronic structure in itself, and the introduction of metal cations adds further complexity to the states near the Fermi level (EF) due to the overlap of metal d states with carbon and nitrogen 2p states. In this thesis, the electronic structure of several Pc's has been studied by soft x-ray spectroscopies, such as x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and x-ray emission spectroscopy (XES). To avoid potential contamination and beam damage, the large area thin film samples have been prepared in situ by using organic molecular beam deposition (OMBD). The structure of samples were characterized ex situ by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The soft x-ray spectra recorded from stationary samples are found to represent the electronic structure from damaged molecules, which is caused by intense x-ray beams. Continuously translating samples during measurement overcomes this problem. Element, chemical, and symmetry specific occupied and unoccupied partial density of states (PDOS) from Pc's were observed. They show good agreement with density functional theory (DFT) calculations. Studies of potassium doping non-transition metal Pc, fluorinated metal Pc, and metal oxide Pc's show several interesting phenomena, such as variation of molecular symmetry, and charge transfer and d-d* resonant inelastic x

  20. Fabrication of Smooth Patterned Structures of Refractory Metals, Semiconductors, and Oxides via Template Stripping

    PubMed Central

    2013-01-01

    The template-stripping method can yield smooth patterned films without surface contamination. However, the process is typically limited to coinage metals such as silver and gold because other materials cannot be readily stripped from silicon templates due to strong adhesion. Herein, we report a more general template-stripping method that is applicable to a larger variety of materials, including refractory metals, semiconductors, and oxides. To address the adhesion issue, we introduce a thin gold layer between the template and the deposited materials. After peeling off the combined film from the template, the gold layer can be selectively removed via wet etching to reveal a smooth patterned structure of the desired material. Further, we demonstrate template-stripped multilayer structures that have potential applications for photovoltaics and solar absorbers. An entire patterned device, which can include a transparent conductor, semiconductor absorber, and back contact, can be fabricated. Since our approach can also produce many copies of the patterned structure with high fidelity by reusing the template, a low-cost and high-throughput process in micro- and nanofabrication is provided that is useful for electronics, plasmonics, and nanophotonics. PMID:24001174

  1. Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

    SciTech Connect

    Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung; Baciak, James E.; Bliss, Mary; Nino, Juan C.

    2016-01-01

    The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient to the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.

  2. Fabrication of Nanovoid-Imbedded Bismuth Telluride with Low Dimensional System

    NASA Technical Reports Server (NTRS)

    Chu, Sang-Hyon (Inventor); Choi, Sang H. (Inventor); Kim, Jae-Woo (Inventor); Park, Yeonjoon (Inventor); Elliott, James R. (Inventor); King, Glen C. (Inventor); Stoakley, Diane M. (Inventor)

    2013-01-01

    A new fabrication method for nanovoids-imbedded bismuth telluride (Bi--Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi--Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.

  3. Materials Science and Technology, Volume 4, Electronic Structure and Properties of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schröter, Wolfgang

    1996-12-01

    This volume spans the field of semiconductor physics, with particular emphasis on concepts relevant to semiconductor technology. From the Contents: Lannoo: Band Theory Applied to Semiconductors. Ulbrich: Optical Properties and Charge Transport. Watkins: Intrinsic Point Defects in Semiconductors. Feichtinger: Deep Centers in Semiconductors. Gösele/Tan: Equilibria, Nonequilibria, Diffusion, and Precipitation. Alexander/Teichler: Dislocations. Thibault/Rouvière/Bourret: Grain Boundaries in Semiconductors. Ourmazd/Hull/Tung: Interfaces. Chang: The Hall Effect in Quantum Wires. Street/Winer: Material Properties of Hydrogenated Amorphous Silicon. Schröter/Seibt/Gilles: High-Temperature Properties of 3d Transition Elements in Silicon.

  4. Metal-Insulator-Semiconductor (MIS) Structure with AlN Dielectric

    SciTech Connect

    Mahyuddin, A.; Hassan, Z.; Cheong, K. Y.

    2009-06-01

    In this paper, we present the study of the structural and electrical properties of AlN/GaN thin films grown on Si (111) substrates by plasma-assisted molecular beam epitaxy (RF-MBE) with AlN buffer layer. The performance of aluminum nitride (AlN) as insulator and aluminum (Al) contacts is presented. The thickness of GaN film and AlN insulating film as seen from SEM cross section are about 357.3 nm and 63.38 nm respectively. The presence of Ga, Al and N are confirmed by energy dispersive X-ray (EDX) measurement. The X-ray diffraction (XRD) measurement reveals that the samples are all wurtzite hexagonal AlN and GaN structure. The fabricated metal-insulator-semiconductor (MIS) structure was characterized using capacitance-voltage (C-V) measurements.

  5. Electrical Characteristics and Interface Properties of III Nitride-Based Metal-Insulator-Semiconductor Structure

    SciTech Connect

    Mahyuddin, A.; Hassan, Z.; Yusof, Y.; Cheong, K. Y.

    2010-07-07

    In this work, III-Nitride based metal-insulator-semiconductor (MIS) structure has been studied using AlN/GaN heterostructures on Si (111) with AlN buffer layer grown by plasma-assisted molecular beam epitaxy (MBE). The structural and electrical characteristics of the films were studied through high resolution x-ray diffraction (HRXRD), capacitance-voltage (C-V) and current-voltage (I-V) measurements. The value of flat-band voltage was -0.7 V. A total fixed oxide charge density of 2.73x10{sup 11} cm{sup -2} was estimated. Terman's method was used to obtain the density of interface state in the MIS structure. The analysis showed low interface state density values of 3.66x10{sup 11} cm{sup -2} eV{sup -1}.

  6. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    SciTech Connect

    Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  7. Photoluminescence in semiconductor structures based on butyl-substituted erbium phthalocyanine complexes

    SciTech Connect

    Belogorokhov, I. A. Ryabchikov, Yu. V.; Tikhonov, E. V.; Pushkarev, V. E.; Breusova, M. O.; Tomilova, L. G.; Khokhlov, D. R.

    2008-03-15

    The study is concerned with the luminescence properties of ensembles of semiconductor structures containing organic phthalocyanine molecules with erbium ions as complexing agents. The photoluminescence spectra of the structures of the type of erbium monophthalocyanine, bisphthalocyanine, and triphthalocyanine are recorded. The photoluminescence peaks are detected at the wavelengths 888, 760, and 708 nm (and photon energies 1.4, 1.6, and 1.75 eV) corresponding to electronic transitions within the organic complexes. It is found that, when a metal complexing agent is introduced into the molecular structure of the ligand, the 708 nm luminescence peak becomes unobservable. It is shown that, in the bisphthalocyanine samples, the photoluminescence signal corresponding to transitions from the 4F{sub 9/2} level of erbium ions is enhanced.

  8. Synthesis, characterization, and properties of low-dimensional nanostructured materials

    NASA Astrophysics Data System (ADS)

    Hu, Xianluo

    2007-05-01

    Nanometer scale structures represent an exciting and rapidly expanding area of research. Studies on new physical/chemical properties and applications of nanomaterials and nanostructures are possible only when nanostructured materials are made available with desired size, morphology, crystal and microstructure, and composition. Thus, controlled synthesis of nanomaterials is the essential aspect of nanotechnology. This thesis describes the development of simple and versatile solution-based approaches to synthesize low-dimensional nanostructures. The first major goal of this research is to design and fabricate morphology-controlled alpha-Fe 2O3 nanoarchitectures in aqueous solution through a programmed microwave-assisted hydrothermal route, taking advantage of microwave irradiation and hydrothermal effects. Free-standing alpha-Fe2O3 nanorings are prepared by hydrolysis of FeCl3 in the presence of phosphate ions. The as-formed architecture of alpha-Fe2O 3 nanorings is an exciting new member in the family of iron oxide nanostructures. Our preliminary results demonstrate that sensors made of the alpha-Fe 2O3 nanorings exhibit high sensitivity not only for bio-sensing of hydrogen peroxide in a physiological solution but also for gas-sensing of alcohol vapor at room temperature. Moreover, monodisperse alpha-Fe 2O3 nanocrystals with continuous aspect-ratio tuning and fine shape control are achieved by controlling the experimental conditions. The as-formed alpha-Fe2O3 exhibits shape-dependent infrared optical properties. The growth process of colloidal alpha-Fe 2O3 crystals in the presence of phosphate ions is discussed. In addition, through an efficient microwave-assisted hydrothermal process, self-assembled hierarchical alpha-Fe2O3 nanoarchitectures are synthesized on a large scale. The second major goal of this research is to develop convenient microwave-hydrothermal approaches for the fabrication of carbon-based nanocomposites: (1) A one-pot solution-phase route, namely

  9. Correlation of nanoscale structure with electronic and magnetic properties in semiconductor materials

    NASA Astrophysics Data System (ADS)

    He, Li

    The goal of this research is to correlate individual nanostructures with their electronic and magnetic properties. Three classes of semiconductor materials and nanostructures were investigated: nanowires, dilute magnetic semiconductors, and quantum dots. First, we fabricated electrical contact to free-standing nanowires using focused ion beam (FIB)-induced deposition and achieved ohmic contact between GaP nanowires and FIB-deposited Pt. Ion irradiation was found to change the nanowire resistance, presumably through the generation of electrical active defects. Based on the finding that ion beam induces deposition outside the direct impact area, a new fabrication method for nanowire core-shell structures was developed by creating an annular direct deposition pattern around the nanowire. We also developed a new nanowire transmission electron microscopy (TEM) sample preparation method that enabled the free-standing nanowires to be individually studied in the TEM. Distribution of Pt and Si elements in the deposited layers was confirmed by x-ray energy dispersive spectroscopy and electron energy filtered imaging (elemental mapping). The indirect deposition mechanism is attributed to the interaction of secondary electrons generated from the primary ion impact area with the deposition precursor absorbed at the nanowire surface. The calculated secondary electron flux distribution matched well with the variation of deposition thickness along the nanowire length and with the pattern radius. The second part of this work employed Mn implantation in Ge with subsequent rapid thermal annealing or TEM in-situ annealing to study the correlation between structure and magnetic properties in Ge:Mn magnetic semiconductor materials. Implantation at 75°C with dual Mn doses (2.4x10 15/cm2 at 170 keV, followed by 5.6x10 15/cm2 at 60 keV) produced an amorphous Ge film containing Mn-rich clusters. Its magnetic properties indicated dispersion of ferromagnetic regions in a non-magnetic matrix

  10. Synchrotron Studies of Narrow Band and Low-Dimensional Materials. Final Report for July 1, 1990---December 31, 2002

    SciTech Connect

    Allen, J. W.

    2003-05-13

    This report summarizes a 12-year program of various kinds of synchrotron spectroscopies directed at the electronic structures of narrow band and low-dimensional materials that display correlated electron behaviors such as metal-insulator transitions, mixed valence, superconductivity, Kondo moment quenching, heavy Fermions, and non-Fermi liquid properties.

  11. The preparation of organic infrared semiconductor phthalocyanine gadolinium (III) and its optical and structural characterizations

    NASA Astrophysics Data System (ADS)

    Tang, Li-bin; Ji, Rong-bin; Song, Li-yuan; Chen, Xue-mei; Ma, Yu; Wang, Yi-feng; Qian, Ming; Song, Lei; Su, Hai-ying; Zhuang, Ji-sheng; Yang, Rui-yu

    2009-07-01

    In order to increase the species of organic infrared semiconductor, we synthesized organic infrared semiconductor phthalocyanine gadolinium by using o-phthalodinitrile and GdCl3 as reactants, ammonium molybdate as catalyzer. Under light and dark field modes of microscope, the translucency emerald-like powder of phthalocyanine gadolinium has been observed, the size of the small grain for the sample is around 5μm in diameter, the size of larger grain may reach to several tens of microns. The main vibrational peaks in FT-IR spectrum and Raman spectrum have been assigned. Elementary analysis shows that the experimental data of phthalocyanine gadolinium in the main agree with those of calculated data. The UV-Vis absorption spectrum of the sample indicates the sandwich-like structure of phthalocyanine gadolinium. The organic infrared semiconductor phthalocyanine gadolinium thin film on quartz substrate has been prepared with our synthesized powdered sample by using solution method. The characterizations of XRD and UV-Vis-NIR absorption have been carried out for the phthalocyanine gadolinium thin film on quartz substrate, XRD shows that phthalocyanine gadolinium diffractions occur at 2θ=6.851,8.290 and 8.820 degrees, the corresponding plane spacings (d) for the diffraction peaks are 12.8921, 10.6570, and 10.0176Å.The diffraction peaks locate at low diffraction angle, suggesting that the molecular size of the phthalocyanine gadolinium is big that causes the large spacing of crystal planes. The UV-Vis-NIR absorption of phthalocyanine gadolinium thin film on quartz substrate implies that within near infrared band there is a absorption in the 1.3~2.0μm wavelength range peaked at ca. 1.75μm, indicating the important potential application value of phthalocyanine gadolinium in the field of organic infrared optoelectronics.

  12. Structure-fluctuation-induced abnormal thermoelectric properties in semiconductor copper selenide

    SciTech Connect

    Liu, Huili; Shi, Xun; Kirkham, Melanie J; Wang, Hsin; Li, Qiang; Uher, Ctirad; Zhang, Wenqing; Chen, Lidong

    2013-01-01

    Thermoelectric effects and related technologies have attracted a great interest due to the world-wide energy harvesting. Thermoelectricity has usually been considered in the context of stable material phases. Here we report that the fluctuation of structures during the second-order phase transition in Cu2Se semiconductor breaks the conventional trends of thermoelectric transports in normal phases, leading to a critically phase-transition-enhanced thermoelectric figure of merit zT above unity at 400K, a three times larger value than for the normal phases. Dynamic structural transformations introduce intensive fluctuations and extreme complexity, which enhance the carrier entropy and thus the thermopower, and strongly scatter carriers and phonons as well to make their transports behave critically.

  13. Low-dimensional maps for piecewise smooth oscillators

    NASA Astrophysics Data System (ADS)

    Pavlovskaia, Ekaterina; Wiercigroch, Marian

    2007-09-01

    Dynamics of the piecewise smooth nonlinear oscillators is considered, for which, general methodology of reducing multidimensional flows to low-dimensional maps is proposed. This includes a definition of piecewise smooth oscillator and creation of a global iterative map providing an exact solution. The global map is comprised of local maps, which are constructed in the smooth sub-regions of phase space. To construct this low-dimensional map, it is proposed to monitor the points of intersections of a chosen boundary between smooth subspaces by a trajectory. The dimension reduction is directly related to the dimension of the chosen boundary, and the lower its dimension is, the larger dimension reduction can be achieved. Full details are given for a drifting impact oscillator, where the five-dimensional flow is reduced to one-dimensional (1D) approximate analytical map. First an exact two-dimensional map has been formulated and analysed. A further reduction to 1D approximate map is introduced and discussed. Standard nonlinear dynamic analysis reveals a complex behaviour ranging from periodic oscillations to chaos, and co-existence of multiple attractors. Accuracy of the constructed maps is examined by comparing with the exact solutions for a wide range of the system parameters.

  14. Response characteristics of a low-dimensional model neuron.

    PubMed

    Cartling, B

    1996-11-15

    It is shown that a low-dimensional model neuron with a response time constant smaller than the membrane time constant closely reproduces the activity and excitability behavior of a detailed conductance-based model of Hodgkin-Huxley type. The fast response of the activity variable also makes it possible to reduce the model to a one-dimensional model, in particular for typical conditions. As an example, the reduction to a single-variable model from a multivariable conductance-based model of a neocortical pyramidal cell with somatic input is demonstrated. The conditions for avoiding a spurious damped oscillatory response to a constant input are derived, and it is shown that a limit-cycle response cannot occur. The capability of the low-dimensional model to approximate higher-dimensional models accurately makes it useful for describing complex dynamics of nets of interconnected neurons. The simplicity of the model facilitates analytic studies, elucidations of neurocomputational mechanisms, and applications to large-scale systems. PMID:8888611

  15. A Low Dimensional Approximation For Competence In Bacillus Subtilis.

    PubMed

    Nguyen, An; Prugel-Bennett, Adam; Dasmahapatra, Srinandan

    2016-01-01

    The behaviour of a high dimensional stochastic system described by a chemical master equation (CME) depends on many parameters, rendering explicit simulation an inefficient method for exploring the properties of such models. Capturing their behaviour by low-dimensional models makes analysis of system behaviour tractable. In this paper, we present low dimensional models for the noise-induced excitable dynamics in Bacillus subtilis, whereby a key protein ComK, which drives a complex chain of reactions leading to bacterial competence, gets expressed rapidly in large quantities (competent state) before subsiding to low levels of expression (vegetative state). These rapid reactions suggest the application of an adiabatic approximation of the dynamics of the regulatory model that, however, lead to competence durations that are incorrect by a factor of 2. We apply a modified version of an iterative functional procedure that faithfully approximates the time-course of the trajectories in terms of a two-dimensional model involving proteins ComK and ComS. Furthermore, in order to describe the bimodal bivariate marginal probability distribution obtained from the Gillespie simulations of the CME, we introduce a tunable multiplicative noise term in a two-dimensional Langevin model whose stationary state is described by the time-independent solution of the corresponding Fokker-Planck equation. PMID:27045827

  16. Photoluminescence polarization anisotropy for studying long-range structural ordering within semiconductor multi-atomic alloys and organic crystals

    SciTech Connect

    Prutskij, T.; Percino, J.; Orlova, T.; Vavilova, L.

    2013-12-04

    Long-range structural ordering within multi-component semiconductor alloys and organic crystals leads to significant optical anisotropy and, in particular, to anisotropy of the photoluminescence (PL) emission. The PL emission of ternary and quaternary semiconductor alloys is polarized if there is some amount of the atomic ordering within the crystal structure. We analyze the polarization of the PL emission from the quaternary GaInAsP semiconductor alloy grown by Liquid Phase Epitaxy (LPE) and conclude that it could be caused by low degree atomic ordering within the crystal structure together with the thermal biaxial strain due to difference between the thermal expansion coefficients of the layer and the substrate. We also study the state of polarization of the PL from organic crystals in order to identify different features of the crystal PL spectrum.

  17. Characterizing structural overpotentials for bubble evolution on nanostructured semiconductor-electrocatalyst interfaces

    NASA Astrophysics Data System (ADS)

    Coridan, Robert H.

    Nanostructured electrocatalysts can improve the kinetics of solar-driven photocatalysis at a semiconductor-liquid junction while minimizing the effect on the energetics of that junction. A relevant example is Pt-decorated Si electrodes for hydrogen evolution from water splitting. Nanostructuring can also impair the reaction kinetics by introducing mass transport overpotentials. For reactions that evolve gas, the active surface area can be blocked by bubbles on discrete catalytic sites, possibly halting the reaction entirely. Here, we explore these issues by measuring the high-frequency dynamics of bubbles evolved from nanostructured electrocatalysts at a semiconductor-electrolyte interface. Using transmission x-ray phase contrast microscopy, we can image gas-evolving reactions as a way to directly measure the effects of adhesion, catalyst structure, and buoyancy on the reaction kinetics. From these measurements, we develop a model for electrolytic bubble evolution and transport that considers coalescence on neighboring sites, surface interactions, and the non-equilibrium shape dynamics of bubbles. This model can be used to identify favorable catalyst motifs that promote bubble clearance and mitigate their influence on reaction kinetics for water splitting applications.

  18. Electronic Structure of Hydrogen Donors in Semiconductors and Insulators Probed by Muon Spin Rotation

    NASA Astrophysics Data System (ADS)

    Shimomura, Koichiro; Ito, Takashi U.

    2016-09-01

    Hydrogen in semiconductors and insulators plays a crucial role in their electric conductivity. Substantial experimental and theoretical efforts have been made to establish this hypothesis in the last decade, and the muon spin rotation technique has played a pioneering role. Positive muons implanted into such low-carrier systems often form a muonium (an analogue of hydrogen, the bound state of a positive muon and an electron). Although its dynamical aspect may be different from the heavier hydrogen, the electronic structure of the muonium is expected to be identical to that of hydrogen after a small correction of the reduced mass (˜0.4%). Since the discovery of a shallow muonium in CdS, its properties have been intensively studied in many semiconductors and insulators, and then it was interpreted as a possible origin of n-type conductivity under the context of a classical shallow donor model. In this article, we will describe the principle of muonium experiments and survey recent achievements in this field.

  19. Low Dimensional Polariton Systems in Subwavelength-Grating Based Microcavities

    NASA Astrophysics Data System (ADS)

    Zhang, Bo

    Semiconductor microcavity exciton-polaritons have recently emerged as a unique, open system for studying non-equilibrium quantum order. Macroscopic quantum phenomenon, Bose-Einstein condensation, has been realized and observed in two dimensional polariton systems utilizing the traditional distributed-Bragg-reflector based samples. Such foundational work on two-dimensional systems has inspired theoretical schemes for polariton-based quantum circuits, quantum light sources and novel quantum phases. Experimental implementation of these schemes requires the control, confinement and coupling of polariton systems, which still remain challenging in conventional microcavity structures. In this thesis, we use the sub-wavelength grating-based microcavities to demonstrate confinement and coupling for the polariton systems. We demonstrated a zero-dimensional polariton device in the sub-wavelength grating-based microcavity. Efficient confinement has been realized in such unconventional microcavity. These confinement features have also been observed in the spectroscopic characterization with discretized energy levels from the device. In addition, the polaritons are highly linear polarized, which is unique to the sub-wavelength grating based devices. The establishment of the polariton lasing/condensation was with non-linear increase of the emission intensity, line-width narrowing and continuous energy shift. Single-mode lasing of polaritons was also demonstrated for the first time. Following the work of single zero-dimensional polariton device, we demonstrated that the coupling among multiple zero-dimensional polariton quantum devices could be readily achieved, leading to de-coupled, coupled and quasi-one-dimensional polariton systems. These coupling effects were controlled and realized by design of the tethering patterns around the sub-wavelength grating based devices. Such devices enable advanced mode engineering and provide the building blocks for polariton-based quantum

  20. Electronic Level Structure and Excitation Modes in Semiconductor Superlattices and D-Parameter Theory.

    NASA Astrophysics Data System (ADS)

    Zhang, Jian

    1990-01-01

    The electronic level structure of a doped semiconductor superlattice such as GaAs-Al_chiGa _{1-chi}As has been calculated self-consistently in a tight-binding envelope function approximation, where inhomogeneous potentials related to depletion regions in real systems have been incorporated. Fermi-level pinning associated with depletion regions at the ends of the superlattice gives rise to surface -localized states lying in the miniband gaps and exhibiting localized eigenstates. Varying barrier transparency and doping density are shown to affect the location of these surface levels within the minigap. The application of a gate voltage across the superlattice structure produces drastic changes ill the level structure, including transitions from the extended to localized behavior in some eigenstates concurrent to shifts in their energies. We further present a theoretical study of the far-infrared response of these systems using the d-parameter formalism. The d( omega) functions, which parametrize the optical response of surfaces, provide position and coupling strengths for all possible optically active modes. d parameters have been used in the study of surfaces and the formalism is adapted here to the study of semiconductor superlattice systems. Intra- and inter-miniband plasma modes as well as single-particle-like transitions, are studied in 'bulk' and in finite-size superlattices. A series of surface modes, related to the charge depletion in the end layers of the superlattice, are distinguishable from the bulk modes. These additional modes are characterized by strong oscillations of the induced charge density near the surface layers, in contrast to the bulk modes which exhibit oscillations throughout the superlattice. The d-parameter formalism is further developed to study a quasi-zero-dimensional quantum dot system with electrons confined inside dots.

  1. Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Stadnyk, Yu. V.; Hlil, E. K.; Krajovskii, V. Ya.; Horyn, A. M.

    2013-07-15

    The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the accumulation of an excess number of Ni{sub 1+x} atoms in tetrahedral interstices of the crystal structure of the semiconductor is found and the donor nature of such structural defects that change the properties of the semiconductor is established. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and strongly compensated semiconductor.

  2. Structural Design Principle of Small-Molecule Organic Semiconductors for Metal-Free, Visible-Light-Promoted Photocatalysis.

    PubMed

    Wang, Lei; Huang, Wei; Li, Run; Gehrig, Dominik; Blom, Paul W M; Landfester, Katharina; Zhang, Kai A I

    2016-08-01

    Herein, we report on the structural design principle of small-molecule organic semiconductors as metal-free, pure organic and visible light-active photocatalysts. Two series of electron-donor and acceptor-type organic semiconductor molecules were synthesized to meet crucial requirements, such as 1) absorption range in the visible region, 2) sufficient photoredox potential, and 3) long lifetime of photogenerated excitons. The photocatalytic activity was demonstrated in the intermolecular C-H functionalization of electron-rich heteroaromates with malonate derivatives. A mechanistic study of the light-induced electron transport between the organic photocatalyst, substrate, and the sacrificial agent are described. With their tunable absorption range and defined energy-band structure, the small-molecule organic semiconductors could offer a new class of metal-free and visible light-active photocatalysts for chemical reactions. PMID:27378555

  3. Common-path depth-filtered digital holography for high resolution imaging of buried semiconductor structures

    NASA Astrophysics Data System (ADS)

    Finkeldey, Markus; Schellenberg, Falk; Gerhardt, Nils C.; Paar, Christof; Hofmann, Martin R.

    2016-03-01

    We investigate digital holographic microscopy (DHM) in reflection geometry for non-destructive 3D imaging of semiconductor devices. This technique provides high resolution information of the inner structure of a sample while maintaining its integrity. To illustrate the performance of the DHM, we use our setup to localize the precise spots for laser fault injection, in the security related field of side-channel attacks. While digital holographic microscopy techniques easily offer high resolution phase images of surface structures in reflection geometry, they are typically incapable to provide high quality phase images of buried structures due to the interference of reflected waves from different interfaces inside the structure. Our setup includes a sCMOS camera for image capture, arranged in a common-path interferometer to provide very high phase stability. As a proof of principle, we show sample images of the inner structure of a modern microcontroller. Finally, we compare our holographic method to classic optical beam induced current (OBIC) imaging to demonstrate its benefits.

  4. Hydrocarbon dissociation on palladium studied with a hydrogen sensitive Pd-metal-oxide-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Dannetun, H.; Lundström, I.; Petersson, L.-G.

    1988-01-01

    The polycrystalline Pd surface of a hydrogen sensitive palladium-silicon dioxide-silicon [Pd-MOS (metal-oxide-semiconductor)] structure has been exposed to small unsaturated hydrocarbons in the temperature range 300-500 K. Apart from the hydrogen response of the Pd-MOS structure also work function (ΔΦ) and electron energy-loss studies were performed. At 500 K the hydrocarbons dissociate completely upon adsorption and produce a surface with atomically adsorbed carbon. The Pd-MOS structure can be used to observe both the dehydrogenation of the hydrocarbon molecules and the process of carbon adsorbing on the palladium surface. The sticking coefficient at this temperature for all hydrocarbons is close to unity. Furthermore, the hydrogen sensitivity of the structure is not drastically reduced by the adsorbed carbon. If the hydrocarbon adsorption is performed at 300 K there is still, at least on the initially clean surface, a large dehydrogenation. The dissociation is, however, not at all complete and there are considerable amounts of hydrocarbon species adsorbed for each gas. The induced work function shifts due to the different hydrocarbons vary from -1.0 to -1.7 eV. The hydrogen sensitivity of the Pd-MOS structure is reduced for growing hydrocarbon coverages and disappears completely for work function shifts of -1.7 eV.

  5. Structure and stability of semiconductor tip apexes for atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Pou, P.; Ghasemi, S. A.; Jelinek, P.; Lenosky, T.; Goedecker, S.; Perez, R.

    2009-07-01

    The short range force between the tip and the surface atoms, that is responsible for atomic-scale contrast in atomic force microscopy (AFM), is mainly controlled by the tip apex. Thus, the ability to image, manipulate and chemically identify single atoms in semiconductor surfaces is ultimately determined by the apex structure and its composition. Here we present a detailed and systematic study of the most common structures that can be expected at the apex of the Si tips used in experiments. We tackle the determination of the structure and stability of Si tips with three different approaches: (i) first principles simulations of small tip apexes; (ii) simulated annealing of a Si cluster; and (iii) a minima hopping study of large Si tips. We have probed the tip apexes by making atomic contacts between the tips and then compared force-distance curves with the experimental short range forces obtained with dynamic force spectroscopy. The main conclusion is that although there are multiple stable solutions for the atomically sharp tip apexes, they can be grouped into a few types with characteristic atomic structures and properties. We also show that the structure of the last atomic layers in a tip apex can be both crystalline and amorphous. We corroborate that the atomically sharp tips are thermodynamically stable and that the tip-surface interaction helps to produce the atomic protrusion needed to get atomic resolution.

  6. Effects of lateral asymmetry on electronic structure of strained semiconductor nanorings in a magnetic field

    NASA Astrophysics Data System (ADS)

    Milošević, M. M.; Tadić, M.; Peeters, F. M.

    2008-11-01

    The influence of lateral asymmetry on the electronic structure and optical transitions in elliptical strained InAs nanorings is analyzed in the presence of a perpendicular magnetic field. Two-dimensional rings are assumed to have elliptical inner and outer boundaries oriented in mutually orthogonal directions. The influence of the eccentricity of the ring on the energy levels is analyzed. For large eccentricity of the ring, we do not find any Aharonov-Bohm effect, in contrast to circular rings. Rather, the single-particle states of the electrons and the holes are localized as in two laterally coupled quantum dots formed in the lobes of the nanoring. Our work indicates that the control of shape is important for the existence of the Aharonov-Bohm effect in semiconductor nanorings.

  7. Effects of lateral asymmetry on electronic structure of strained semiconductor nanorings in a magnetic field.

    PubMed

    Milošević, M M; Tadić, M; Peeters, F M

    2008-11-12

    The influence of lateral asymmetry on the electronic structure and optical transitions in elliptical strained InAs nanorings is analyzed in the presence of a perpendicular magnetic field. Two-dimensional rings are assumed to have elliptical inner and outer boundaries oriented in mutually orthogonal directions. The influence of the eccentricity of the ring on the energy levels is analyzed. For large eccentricity of the ring, we do not find any Aharonov-Bohm effect, in contrast to circular rings. Rather, the single-particle states of the electrons and the holes are localized as in two laterally coupled quantum dots formed in the lobes of the nanoring. Our work indicates that the control of shape is important for the existence of the Aharonov-Bohm effect in semiconductor nanorings. PMID:21832775

  8. Electronic-Structure Theory of Organic Semiconductors: Charge-Transport Parameters and Metal/Organic Interfaces

    NASA Astrophysics Data System (ADS)

    Coropceanu, Veaceslav; Li, Hong; Winget, Paul; Zhu, Lingyun; Brédas, Jean-Luc

    2013-07-01

    We focus this review on the theoretical description, at the density functional theory level, of two key processes that are common to electronic devices based on organic semiconductors (such as organic light-emitting diodes, field-effect transistors, and solar cells), namely charge transport and charge injection from electrodes. By using representative examples of current interest, our main goal is to introduce some of the reliable theoretical methodologies that can best depict these processes. We first discuss the evaluation of the microscopic parameters that determine charge-carrier transport in organic molecular crystals, i.e., electronic couplings and electron-vibration couplings. We then examine the electronic structure at interfaces between an organic layer and a metal or conducting oxide electrode, with an emphasis on the work-function modifications induced by the organic layer and on the interfacial energy-level alignments.

  9. Nonparametric forecasting of low-dimensional dynamical systems

    NASA Astrophysics Data System (ADS)

    Berry, Tyrus; Giannakis, Dimitrios; Harlim, John

    2015-03-01

    This paper presents a nonparametric modeling approach for forecasting stochastic dynamical systems on low-dimensional manifolds. The key idea is to represent the discrete shift maps on a smooth basis which can be obtained by the diffusion maps algorithm. In the limit of large data, this approach converges to a Galerkin projection of the semigroup solution to the underlying dynamics on a basis adapted to the invariant measure. This approach allows one to quantify uncertainties (in fact, evolve the probability distribution) for nontrivial dynamical systems with equation-free modeling. We verify our approach on various examples, ranging from an inhomogeneous anisotropic stochastic differential equation on a torus, the chaotic Lorenz three-dimensional model, and the Niño-3.4 data set which is used as a proxy of the El Niño Southern Oscillation.

  10. Low-Dimensional Chaos in an Instance of Epilepsy

    NASA Astrophysics Data System (ADS)

    Babloyantz, A.; Destexhe, A.

    1986-05-01

    Using a time series obtained from the electroencephalogram recording of a human epileptic seizure, we show the existence of a chaotic attractor, the latter being the direct consequence of the deterministic nature of brain activity. This result is compared with other attractors seen in normal human brain dynamics. A sudden jump is observed between the dimensionalities of these brain attractors 4.05 ± 0.05 for deep sleep) and the very low dimensionality of the epileptic state (2.05 ± 0.09). The evaluation of the autocorrelation function and of the largest Lyapunov exponent allows us to sharpen further the main features of underlying dynamics. Possible implications in biological and medical research are briefly discussed.

  11. Low-Dimensional Chaos of High-Latitude Solar Activity

    NASA Astrophysics Data System (ADS)

    Li, Qi-Xiu; Li, Ke-Jun

    2007-10-01

    The chaos of high-latitude solar activity has been investigated by determining the behavior of the monthly averaged polar facula counts obtained from the National Astronomical Observatory of Japan (NAOJ) on the basis of nonlinear dynamics theories and methods. It is found that the high-latitude solar activity is also governed by a low-dimensional chaotic attractor in both the northern and southern solar hemispheres, which is the same as that of the low-latitude solar activity. However, their maximal Lyapunov exponents are different, showing different strength of chaos. The maximal Lyapunov exponent (MLE) of polar faculae in the southern solar hemisphere is about 0.0211 ± 0.0003 (month-1), which is nearly consistent with the low-latitude Wolf sunspot numbers, while the MLE in the northern one is approximately 0.0944 ± 0.0066 (month-1), which is obviously greater than the above two.

  12. Nonparametric forecasting of low-dimensional dynamical systems.

    PubMed

    Berry, Tyrus; Giannakis, Dimitrios; Harlim, John

    2015-03-01

    This paper presents a nonparametric modeling approach for forecasting stochastic dynamical systems on low-dimensional manifolds. The key idea is to represent the discrete shift maps on a smooth basis which can be obtained by the diffusion maps algorithm. In the limit of large data, this approach converges to a Galerkin projection of the semigroup solution to the underlying dynamics on a basis adapted to the invariant measure. This approach allows one to quantify uncertainties (in fact, evolve the probability distribution) for nontrivial dynamical systems with equation-free modeling. We verify our approach on various examples, ranging from an inhomogeneous anisotropic stochastic differential equation on a torus, the chaotic Lorenz three-dimensional model, and the Niño-3.4 data set which is used as a proxy of the El Niño Southern Oscillation. PMID:25871180

  13. Learning Low-Dimensional Representations of Medical Concepts

    PubMed Central

    Choi, Youngduck; Chiu, Chill Yi-I; Sontag, David

    2016-01-01

    We show how to learn low-dimensional representations (embeddings) of a wide range of concepts in medicine, including diseases (e.g., ICD9 codes), medications, procedures, and laboratory tests. We expect that these embeddings will be useful across medical informatics for tasks such as cohort selection and patient summarization. These embeddings are learned using a technique called neural language modeling from the natural language processing community. However, rather than learning the embeddings solely from text, we show how to learn the embeddings from claims data, which is widely available both to providers and to payers. We also show that with a simple algorithmic adjustment, it is possible to learn medical concept embeddings in a privacy preserving manner from co-occurrence counts derived from clinical narratives. Finally, we establish a methodological framework, arising from standard medical ontologies such as UMLS, NDF-RT, and CCS, to further investigate the embeddings and precisely characterize their quantitative properties. PMID:27570647

  14. Learning Low-Dimensional Representations of Medical Concepts.

    PubMed

    Choi, Youngduck; Chiu, Chill Yi-I; Sontag, David

    2016-01-01

    We show how to learn low-dimensional representations (embeddings) of a wide range of concepts in medicine, including diseases (e.g., ICD9 codes), medications, procedures, and laboratory tests. We expect that these embeddings will be useful across medical informatics for tasks such as cohort selection and patient summarization. These embeddings are learned using a technique called neural language modeling from the natural language processing community. However, rather than learning the embeddings solely from text, we show how to learn the embeddings from claims data, which is widely available both to providers and to payers. We also show that with a simple algorithmic adjustment, it is possible to learn medical concept embeddings in a privacy preserving manner from co-occurrence counts derived from clinical narratives. Finally, we establish a methodological framework, arising from standard medical ontologies such as UMLS, NDF-RT, and CCS, to further investigate the embeddings and precisely characterize their quantitative properties. PMID:27570647

  15. On the theory of domain structure in ferromagnetic phase of diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Stephanovich, V. A.

    2006-09-01

    We present a comprehensive analysis of domain structure formation in ferromagnetic phase of diluted magnetic semiconductors (DMS) of p-type. Our analysis is carried out on the base of effective magnetic free energy of DMS calculated by us earlier [Yu.G. Semenov, V.A. Stephanovich, Phys. Rev. B 67 (2003) 195203]. This free energy, substituting DMS (a disordered magnet) by effective ordered substance, permits to apply the standard phenomenological approach to domain structure calculation. Using coupled system of Maxwell equations with those obtained by minimization of above free energy functional, we show the existence of critical ratio ν of concentration of charge carriers and magnetic ions such that sample critical thickness L (such that at Lν the sample is monodomain. This feature makes DMS different from conventional ordered magnets as it gives a possibility to control the sample critical thickness and emerging domain structure period by variation of ν. As concentration of magnetic impurities grows, ν→∞ restoring conventional behavior of ordered magnets. Above facts have been revealed by examination of the temperature of transition to inhomogeneous magnetic state (stripe domain structure) in a slab of finite thickness L of p-type DMS. Our theory can be easily generalized for arbitrary temperature and DMS shape.

  16. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

    NASA Astrophysics Data System (ADS)

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H. Q.

    2016-06-01

    We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)—a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula.

  17. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

    PubMed Central

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H. Q.

    2016-01-01

    We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)—a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula. PMID:27307081

  18. Structural and electronic properties of amorphous ternary and quaternary oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Sanders, K. Nocona; Khanal, Rabi; Medvedeva, Julia E.

    Amorphous structures of several multi-cation wide-bandgap oxides (In-Ga-Zn-O, In-Sc-O, In-Y-O, and In-La-O) were obtained via first-principles molecular dynamics liquid-quench approach using different cooling rates and different oxygen and metal compositions. A detailed comparison of the structural properties, namely, the distribution of metal-oxygen (M-O) and metal-metal (M-M) distances, bond angles, and coordination, allows us to determine how the MO polyhedra network is affected by the crystalline-to-amorphous transition. Furthermore, the role of oxygen non-stoichiometry in defect formation is investigated. Specifically, local structural defects associated with severe distortions in the metal-oxygen polyhedra, such as under-coordinated metal and oxygen atoms, or M-M bonds, appear in the electronic band structure of amorphous oxides. Both carrier-generating defects and carrier trapping/scattering defects are identified. The results help determine the optimal composition and preparation conditions (i.e., oxygen partial pressure, deposition temperature) in order to achieve the desired properties of the technologically-appealing amorphous oxide semiconductors. NSF-MRSEC.

  19. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide.

    PubMed

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H Q

    2016-01-01

    We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)-a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula. PMID:27307081

  20. Low-dimensional functionality of complex network dynamics: Neurosensory integration in the Caenorhabditiselegans connectome

    NASA Astrophysics Data System (ADS)

    Kunert, James; Shlizerman, Eli; Kutz, J. Nathan

    2014-05-01

    We develop a biophysical model of neurosensory integration in the model organism Caenorhabditis elegans. Building on experimental findings on the neuron conductances and their resolved connectome, we posit the first full dynamic model of the neural voltage excitations that allows for a characterization of network structures which link input stimuli to neural proxies of behavioral responses. Full connectome simulations of neural responses to prescribed inputs show that robust, low-dimensional bifurcation structures drive neural voltage activity modes. Comparison of these modes with experimental studies allows us to link these network structures to behavioral responses. Thus the underlying bifurcation structures discovered, i.e., induced Hopf bifurcations, are critical in explaining behavioral responses such as swimming and crawling.

  1. Energy-pressure relation for low-dimensional gases

    NASA Astrophysics Data System (ADS)

    Mancarella, Francesco; Mussardo, Giuseppe; Trombettoni, Andrea

    2014-10-01

    A particularly simple relation of proportionality between internal energy and pressure holds for scale-invariant thermodynamic systems (with Hamiltonians homogeneous functions of the coordinates), including classical and quantum - Bose and Fermi - ideal gases. One can quantify the deviation from such a relation by introducing the internal energy shift as the difference between the internal energy of the system and the corresponding value for scale-invariant (including ideal) gases. After discussing some general thermodynamic properties associated with the scale-invariance, we provide criteria for which the internal energy shift density of an imperfect (classical or quantum) gas is a bounded function of temperature. We then study the internal energy shift and deviations from the energy-pressure proportionality in low-dimensional models of gases interpolating between the ideal Bose and the ideal Fermi gases, focusing on the Lieb-Liniger model in 1d and on the anyonic gas in 2d. In 1d the internal energy shift is determined from the thermodynamic Bethe ansatz integral equations and an explicit relation for it is given at high temperature. Our results show that the internal energy shift is positive, it vanishes in the two limits of zero and infinite coupling (respectively the ideal Bose and the Tonks-Girardeau gas) and it has a maximum at a finite, temperature-depending, value of the coupling. Remarkably, at fixed coupling the energy shift density saturates to a finite value for infinite temperature. In 2d we consider systems of Abelian anyons and non-Abelian Chern-Simons particles: as it can be seen also directly from a study of the virial coefficients, in the usually considered hard-core limit the internal energy shift vanishes and the energy is just proportional to the pressure, with the proportionality constant being simply the area of the system. Soft-core boundary conditions at coincident points for the two-body wavefunction introduce a length scale, and induce a

  2. Development of a Localized Low-Dimensional Approach to Turbulence Simulation

    NASA Astrophysics Data System (ADS)

    Juttijudata, Vejapong; Rempfer, Dietmar; Lumley, John

    2000-11-01

    Our previous study has shown that the localized low-dimensional model derived from a projection of Navier-Stokes equations onto a set of one-dimensional scalar POD modes, with boundary conditions at y^+=40, can predict wall turbulence accurately for short times while failing to give a stable long-term solution. The structures obtained from the model and later studies suggest our boundary conditions from DNS are not consistent with the solution from the localized model resulting in an injection of energy at the top boundary. In the current study, we develop low-dimensional models using one-dimensional scalar POD modes derived from an explicitly filtered DNS. This model problem has exact no-slip boundary conditions at both walls while the locality of the wall layer is still retained. Furthermore, the interaction between wall and core region is attenuated via an explicit filter which allows us to investigate the quality of the model without requiring complicated modeling of the top boundary conditions. The full-channel model gives reasonable wall turbulence structures as well as long-term turbulent statistics while still having difficulty with the prediction of the mean velocity profile farther from the wall. We also consider a localized model with modified boundary conditions in the last part of our study.

  3. Geometric and electronic structure of mixed metal-semiconductor clusters from global optimization.-

    NASA Astrophysics Data System (ADS)

    Hagelberg, Frank; Wu, Jianhua

    2006-03-01

    In addition to pure metal and semiconductor clusters, hybrid species that contain both types of constituents occur at the metal-semiconductor interface. Thus, clusters of the form Cu(x)Si(y) were detected by mass spectrometry [1]. In this contribution, the geometric and energetic features of Me(m)Si(7-m) (Me=Cu and Li) clusters are discussed. The choice of these systems is motivated by the structural similarity of the pure Si(7), Li(7), and Cu(7) systems which all stabilize in D(5h) symmetry. On the other hand, Li and Cu, representing the alkali group (IA) and the noble metal group (IB) of the periodic system, are expected to display strongly differing behavior when integrated into a Si(n) cluster, resulting in different ground state geometries for the cases Me = Li and Me = Cu. Addressing this problem by means of geometry optimization requires, in view of the large number of possible atomic permutations for Me(m)Si(7-m) with 0 < m < 7, the use of a global search algorithm. Equilibrium geometries are obtained by simulated annealing within the Nose' thermostat frame. It is observed that Cu(m)Si(7-m) clusters with m < 6 tend towards ground state geometries derived from the D(5h) prototype. For Li(m)Si(7-m), the Li(m) subsystem is found to adsorb on the framework of the Si(7-m) dianion. [1] J.J. Scherer, J.B. Pau, C.P. Collier, A. O'Keefe, and R.J. Saykally, J. Chem. Phys. 103, 9187 (1995).

  4. Structural and magnetic properties of a prospective spin gapless semiconductor MnCrVAl

    NASA Astrophysics Data System (ADS)

    Huh, Y.; Gilbert, S.; Kharel, P.; Jin, Y.; Lukashev, P.; Valloppilly, S.; Sellmyer, D. J.

    Recently a new class of material, spin gapless semiconductors (SGS), has attracted much attention because of their potential for spintronic devices. We have synthesized a Heusler compound, MnCrVAl, which is theoretically predicted to exhibit SGS by arc melting, rapid quenching and thermal annealing. First principles calculations are employed to describe its structural, electronic and magnetic properties. X-ray diffraction indicates that the rapidly quenched samples crystallize in the disordered cubic structure. The crystal structure is stable against heat treatment up to 650oC. The samples show very small saturation magnetization, 0.3 emu/g, at room temperature under high magnetic field, 30 kOe. Above room temperature, the magnetization increases with increasing temperature undergoing a magnetic transition at 560oC, similar to an antiferromagnetic-to-paramagnetic transition. The prospect of this material for spintronic applications will be discussed. This research is supported by SDSU Academic/Scholarly Excellence Fund, and Research/Scholarship Support Fund. Research at UNL is supported by DOE (DE-FG02-04ER46152, synthesis, characterization), NSF (ECCS-1542182, facilities), and NRI.

  5. Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

    SciTech Connect

    Korobova, N. Timoshenkov, S.; Almasov, N.; Prikhodko, O.; Tsendin, K.

    2014-10-21

    Structure of amorphous chalcogenide semiconductor glassy As-S-Se films, obtained by high-frequency (HF) ion-plasma sputtering has been investigated. It was shown that the length of the atomic structure medium order and local structure were different from the films obtained by thermal vacuum evaporation. Temperature dependence of dark conductivity, as well as the dependence of the spectral transmittance has been studied. Conductivity value was determined at room temperature. Energy activation conductivity and films optical band gap have been calculated. Temperature and field dependence of the drift mobility of charge carriers in the HF As-S-Se films have been shown. Bipolarity of charge carriers drift mobility has been confirmed. Absence of deep traps for electrons in the As{sub 40}Se{sub 30}S{sub 30} spectrum of localized states for films obtained by HF plasma ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As{sub 40}Se{sub 30}S{sub 30} films obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

  6. Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

    PubMed Central

    Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

    2013-01-01

    High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

  7. Characterization of low-dimensional dynamics in the crayfish caudal photoreceptor

    NASA Astrophysics Data System (ADS)

    Pei, Xing; Moss, Frank

    1996-02-01

    ATTEMPTS to detect and characterize chaos in biological systems are of considerable interest, especially in medical science, where successful demonstrations may lead to new diagnostic tools and therapies1. Unfortunately, conventional methods for identifying chaos often yield equivocal results when applied to biological data2-8, which are usually heavily contaminated with noise. For such applications, a new technique1 based on the detection of unstable periodic orbits holds promise. Infinite sets of unstable periodic orbits underlie chaos in dissipative systems4,9; accordingly, the new method searches a time series only for rare events8 characteristic of these unstable orbits10, rather than analysing the structure of the series as a whole. Here we demonstrate the efficacy of the method when applied to the dynamics of the crayfish caudal photoreceptor (subject to stimuli representative of the animal's natural habitat). Our findings confirm the existence of low-dimensional dynamics in the system, and strongly suggest the existence of deterministic chaos. More importantly, these results demonstrate the power of methods based on the detection of unstable periodic orbits for identifying low-dimensional dynamics-and, in particular, chaos-in biological systems.

  8. Low-dimensional carbon and MXene-based electrochemical capacitor electrodes

    NASA Astrophysics Data System (ADS)

    Yoon, Yeoheung; Lee, Keunsik; Lee, Hyoyoung

    2016-04-01

    Due to their unique structure and outstanding intrinsic physical properties such as extraordinarily high electrical conductivity, large surface area, and various chemical functionalities, low-dimension-based materials exhibit great potential for application in electrochemical capacitors (ECs). The electrical properties of electrochemical capacitors are determined by the electrode materials. Because energy charge storage is a surface process, the surface properties of the electrode materials greatly influence the electrochemical performance of the cell. Recently, graphene, a single layer of sp2-bonded carbon atoms arrayed into two-dimensional carbon nanomaterial, has attracted wide interest as an electrode material for electrochemical capacitor applications due to its unique properties, including a high electrical conductivity and large surface area. Several low-dimensional materials with large surface areas and high conductivity such as onion-like carbons (OLCs), carbide-derived carbons (CDCs), carbon nanotubes (CNTs), graphene, metal hydroxide, transition metal dichalcogenides (TMDs), and most recently MXene, have been developed for electrochemical capacitors. Therefore, it is useful to understand the current issues of low-dimensional materials and their device applications.

  9. Low-dimensional carbon and MXene-based electrochemical capacitor electrodes.

    PubMed

    Yoon, Yeoheung; Lee, Keunsik; Lee, Hyoyoung

    2016-04-29

    Due to their unique structure and outstanding intrinsic physical properties such as extraordinarily high electrical conductivity, large surface area, and various chemical functionalities, low-dimension-based materials exhibit great potential for application in electrochemical capacitors (ECs). The electrical properties of electrochemical capacitors are determined by the electrode materials. Because energy charge storage is a surface process, the surface properties of the electrode materials greatly influence the electrochemical performance of the cell. Recently, graphene, a single layer of sp(2)-bonded carbon atoms arrayed into two-dimensional carbon nanomaterial, has attracted wide interest as an electrode material for electrochemical capacitor applications due to its unique properties, including a high electrical conductivity and large surface area. Several low-dimensional materials with large surface areas and high conductivity such as onion-like carbons (OLCs), carbide-derived carbons (CDCs), carbon nanotubes (CNTs), graphene, metal hydroxide, transition metal dichalcogenides (TMDs), and most recently MXene, have been developed for electrochemical capacitors. Therefore, it is useful to understand the current issues of low-dimensional materials and their device applications. PMID:26988574

  10. Photocapacitive light sensor based on metal-YMnO3-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Bogusz, A.; Choudhary, O. S.; Skorupa, I.; Bürger, D.; Lawerenz, A.; Lei, Y.; Zeng, H.; Abendroth, B.; Stöcker, H.; Schmidt, O. G.; Schmidt, H.

    2016-02-01

    Technology of light sensors, due to the wide range of applications, is a dynamically developing branch of both science and industry. This work presents concept of photodetectors based on a metal-ferroelectric-insulator-semiconductor, a structure which has not been thoroughly explored in the field of photodetectors. Functionality of the presented light sensor exploits the effects of photocapacitive phenomena, ferroelectric polarization, and charge trapping. This is accomplished by an interplay between polarization alignment, subsequent charge distribution, and charge trapping processes under given illumination condition and gate voltage. Change of capacitance serves as a read out parameter indicating the wavelength and intensity of the illuminating light. The operational principle of the proposed photocapacitive light sensor is demonstrated in terms of capacitance-voltage and capacitance-time characteristics of an Al/YMnO3/SiNx/p-Si structure exposed to green, red, and near infrared light. Obtained results are discussed in terms of optical properties of YMnO3 and SiNx layers contributing to the performance of photodetectors. Presented concept of light sensing might serve as the basis for the development of more advanced photodetectors.

  11. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    SciTech Connect

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

    2015-03-30

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.

  12. A multi-scale approach to the electronic structure of doped semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Sinai, Ofer; Hofmann, Oliver T.; Rinke, Patrick; Scheffler, Matthias; Heimel, Georg; Kronik, Leeor

    2015-03-01

    The inclusion of the global effects of semiconductor doping poses a unique challenge for first-principles simulations, because the typically low concentration of dopants renders an explicit treatment intractable. Furthermore, the width of the space-charge region (SCR) at charged surfaces often exceeds realistic supercell dimensions. We present a multi-scale technique that addresses these difficulties. It is based on the introduction of excess charge, mimicking free charge carriers from the SCR, along with a fixed sheet of counter-charge mimicking the SCR-related field. Self-consistency is obtained by imposing charge conservation and Fermi level equilibration between the bulk, treated semi-classically, and the electronic states of the slab/surface, which are treated quantum-mechanically. The method, called CREST - the Charge-Reservoir Electrostatic Sheet Technique - can be used with standard electronic structure codes. We validate CREST using a simple tight-binding model, which allows for comparison of its results with calculations encompassing the full SCR explicitly. We then employ it with density functional theory, obtaining insight into the doping dependence of the electronic structures of the metallic clean-cleaved Si(111) surface and its semiconducting (2x1) reconstructions.

  13. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    DOE PAGESBeta

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

    2015-03-30

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biologicalmore » functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.« less

  14. Electronic structure of intrinsic defects in non-stoichiometric amorphous In-Ga-Zn-O semiconductors

    NASA Astrophysics Data System (ADS)

    Han, Woo Hyun; Chang, Kee Joo

    Amorphous oxide semiconductors, such as amorphous In-Ga-Zn-O (a-IGZO), have attracted much attention because of their use as a channel material in thin-film transistors (TFTs). Despite many advantages such as flexibility, transparency, and high electron mobility, a-IGZO based TFTs suffer from defects which cause the instability of threshold voltage under negative bias illumination stress (NBIS) as well as positive bias stress (PBS). Recently, we have proposed that O-vacancy and O-interstitial defects are responsible for the NBIS and PBS instabilities, respectively. In the previous studies, O-related defects were intentionally introduced in stoichiometric a-IGZO. Since the composition ratio is likely to be deviated from the ideal stoichiometry during fabrication, it is important to understand the electronic structure of non-stoichiometric a-IGZO. Here we perform density functional calculations to investigate the electronic structure of O-related defects in various a-IGZO systems with non-stoichiometric chemical compositions, which are generated through melt-and-quench molecular dynamics simulations. We consder both O-abundant and O-deficient samples and discuss the role of intrinsic defects in the device instability.

  15. Spin-Orbit Coupling in Hybrid Semiconductor Structures: From Majorana Fermions to Topological Insulators

    NASA Astrophysics Data System (ADS)

    Scharf, Benedikt

    Hybrid semiconductor structures with strong spin-orbit coupling are responsible for many fascinating phenomena. Topological states in systems of reduced dimensionality, in particular, offer many intriguing possibilities, both for fundamental research as well as for potential applications. In this talk, we describe the importance of the interplay of spin-orbit coupling (SOC) and the sample geometry in realizing exotic Majorana fermions (MFs) in quantum dots and rings and discuss several schemes to detect MFs. An effective SOC from the magnetic textures provided by magnetic tunnel junctions could enable a versatile control of MFs and their adiabatic exchange. We show that in 2D topological insulators (TIs), such as inverted HgTe/CdTe QWs, helical quantum spin Hall (QSH) states persist even at finite magnetic fields below a critical magnetic field above which only quantum Hall (QH) states can be found. We propose magneto-optical absorption measurements to probe the magnetic-field induced transition between the QSH and QH regimes. This measurement scheme is robust against perturbations such as additional SOC due to bulk or structure-inversion asymmetry. Finally, tunnel junctions based on the surfaces of 3D TIs are presented. These junctions can exhibit giant tunneling anomalous Hall (TAH) currents and negative differential TAH conductance, which makes them an attractive and versatile system for spintronic applications.

  16. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    NASA Astrophysics Data System (ADS)

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

    2015-03-01

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.

  17. Raman spectrum of Cu2CdSnSe4 stannite structure semiconductor compound

    NASA Astrophysics Data System (ADS)

    Rincón, C.; Quintero, M.; Moreno, E.; Power, Ch.; Quintero, E.; Henao, J. A.; Macías, M. A.

    2015-12-01

    Raman spectrum of Cu2CdSnSe4 quaternary semiconductor compounds with tetragonal stannite-type structure (space group I 4 bar 2m), a material which has been recognized recently as a potential candidate for thermoelectric applications, has been studied. Most of the fourteen Raman lines expected for this compound according to group theory analysis were observed in the spectrum. Besides to the two strongest A1-symmetry stannite modes at 172 and 192 cm-1 originated from the motion of Se anion around the Cu and Sn cations which remain at rest, the leftover observed Raman lines were tentatively assigned to specific eigenmodes of the stannite crystal structure by comparing these line frequencies with those obtained for this compound from IR measurements as well as with those calculated Raman modes for the Cu2ZnSnSe4 stannite-compound reported in the literature. Two spurious Raman lines related to the presence in this compound of SnSe and SnSe2 minority secondary phases have also been found in the Raman spectrum.

  18. Proton tunneling in low dimensional cesium silicate LDS-1.

    PubMed

    Matsui, Hiroshi; Iwamoto, Kei; Mochizuki, Dai; Osada, Shimon; Asakura, Yusuke; Kuroda, Kazuyuki

    2015-07-14

    In low dimensional cesium silicate LDS-1 (monoclinic phase of CsHSi2O5), anomalous infrared absorption bands observed at 93, 155, 1210, and 1220 cm(-1) are assigned to the vibrational mode of protons, which contribute to the strong hydrogen bonding between terminal oxygen atoms of silicate chain (O-O distance = 2.45 Å). The integrated absorbance (oscillator strength) for those modes is drastically enhanced at low temperatures. The analysis of integrated absorbance employing two different anharmonic double-minimum potentials makes clear that proton tunneling through the potential barrier yields an energy splitting of the ground state. The absorption bands at 93 and 155 cm(-1), which correspond to the different vibrational modes of protons, are attributed to the optical transition between the splitting levels (excitation from the ground state (n = 0) to the first excited state (n = 1)). Moreover, the absorption bands at 1210 and 1220 cm(-1) are identified as the optical transition from the ground state (n = 0) to the third excited state (n = 3). Weak Coulomb interactions in between the adjacent protons generate two types of vibrational modes: symmetric mode (93 and 1210 cm(-1)) and asymmetric mode (155 and 1220 cm(-1)). The broad absorption at 100-600 cm(-1) reveals an emergence of collective mode due to the vibration of silicate chain coupled not only with the local oscillation of Cs(+) but also with the proton oscillation relevant to the second excited state (n = 2). PMID:26178114

  19. Efimov-Like Behaviour in Low-Dimensional Polymer Models

    NASA Astrophysics Data System (ADS)

    Mura, Federica; Bhattacharjee, Somendra M.; Maji, Jaya; Masetto, Mario; Seno, Flavio; Trovato, Antonio

    2016-05-01

    In the quantum Efimov effect, identical bosons form infinitely many bound trimer states at the bound dimer dissociation threshold, with their energy spectrum obeying a universal geometrical scaling law. Inspired by the formal correspondence between the possible trajectories of a quantum particle and the possible conformations of a polymer chain, the existence of a triple-stranded DNA bound state when a double-stranded DNA is not stable was recently predicted by modelling three directed polymer chains in low-dimensional lattices, both fractal (d<1 ) and euclidean (d=1 ). A finite melting temperature for double-stranded DNA requires in d≤ 2 the introduction of a weighting factor penalizing the formation of denaturation bubbles, that is non-base paired portions of DNA. The details of how bubble weighting is defined for a three-chain system were shown to crucially affect the presence of Efimov-like behaviour on a fractal lattice. Here we assess the same dependence on the euclidean 1+1 lattice, by setting up the transfer matrix method for three infinitely long chains confined in a finite size geometry. This allows us to discriminate unambiguously between the absence of Efimov-like behaviour and its presence in a very narrow temperature range, in close correspondence with what was already found on the fractal lattice. When present, however, no evidence is found for triple-stranded bound states other than the ground state at the two-chain melting temperature.

  20. Low-Dimensional Dynamical Models of Thermal Convection

    NASA Technical Reports Server (NTRS)

    Liakopoulos, Anthony

    1996-01-01

    A low-dimensional dynamic model for transitional buoyancy-driven flow in a differentially heated tall enclosure is presented. The full governing partial differential equations with the associated boundary conditions are solved by a spectral element method for a cavity of aspect ratio A=20. Proper orthogonal decomposition is applied to the oscillatory solution at Prandtl number Pr=P tau (omega) = 0.71 and Grashof number G tau (omega) = 3.2 x 10 (exp 4) to construct empirical eigenfunctions. Using the four most energetic empirical eigenfunctions for the velocity and temperature as basis functions and applying Galerkin's method, a reduced model consisting of eight nonlinear ordinary differential equations is obtained. Close to the 'design' conditions (P tau(omega) G tau(omega)), the low-order model (LOM) predictions are in excellent agreement with the predictions of the full model. In particular, the critical Grashof number at the onset of the first temporal flow instability (Hopf bifurcation) was well as the frequency and amplitude of oscillations at supercritical conditions are in excellent agreement with the predictions of the full model. Far from the 'design' conditions, the LOM predicts the existence of multiple stable steady solutions at large values of G tau, and a unique stable steady solution at small values of G tau, and exhibits hysteretic behavior that is qualitatively similar to that observed in direct numerical simulations based on the full model.

  1. Neutron Scattering Study of Low Dimensional Quantum Magnets

    NASA Astrophysics Data System (ADS)

    Broholm, Collin

    1997-03-01

    I review three neutron scattering experiments which have uncovered unusual magnetic phenomena in non-metallic low dimensional quantum antiferromagnets. (Work done in collaboration with M. Adams, G. Aeppli, C. Carlile, S.-W. Cheong, D. Davidović), D. C. Dender, J. F. DiTusa, P. R. Hammar, B. Hessen, T. Ito, S. H. Lee, K. Lefmann, K. Oka, T. G. Perring, A. P. Ramirez, Daniel H. Reich, H. Takagi, A. Taylor, and Guangyong Xu. I present evidence that the low temperature short-range ordered spin configuration in the kagomé bi-layer system SrCr_9pGa_12-9pO_19 is composed of small groups of spins whose dipole moments cancel. I report the first observation of field induced incommensurate spin correlations in the uniform spin 1/2 antiferromagnetic chain copper benzoate, and I discuss new results concerning sub-gap excitations in a spin 1 antiferromagnetic chain with impurity bonds, (Y_1-xCa_x)_2BaNiO_5.

  2. A low-dimensional analogue of holographic baryons

    NASA Astrophysics Data System (ADS)

    Bolognesi, Stefano; Sutcliffe, Paul

    2014-04-01

    Baryons in holographic QCD correspond to topological solitons in the bulk. The most prominent example is the Sakai-Sugimoto model, where the bulk soliton in the five-dimensional spacetime of AdS-type can be approximated by the flat space self-dual Yang-Mills instanton with a small size. Recently, the validity of this approximation has been verified by comparison with the numerical field theory solution. However, multi-solitons and solitons with finite density are currently beyond numerical field theory computations. Various approximations have been applied to investigate these important issues and have led to proposals for finite density configurations that include dyonic salt and baryonic popcorn. Here we introduce and investigate a low-dimensional analogue of the Sakai-Sugimoto model, in which the bulk soliton can be approximated by a flat space sigma model instanton. The bulk theory is a baby Skyrme model in a three-dimensional spacetime with negative curvature. The advantage of the lower-dimensional theory is that numerical simulations of multi-solitons and finite density solutions can be performed and compared with flat space instanton approximations. In particular, analogues of dyonic salt and baryonic popcorn configurations are found and analysed.

  3. Low-Dimensional Feature Representation for Instrument Identification

    NASA Astrophysics Data System (ADS)

    Ihara, Mizuki; Maeda, Shin-Ichi; Ikeda, Kazushi; Ishii, Shin

    For monophonic music instrument identification, various feature extraction and selection methods have been proposed. One of the issues toward instrument identification is that the same spectrum is not always observed even in the same instrument due to the difference of the recording condition. Therefore, it is important to find non-redundant instrument-specific features that maintain information essential for high-quality instrument identification to apply them to various instrumental music analyses. For such a dimensionality reduction method, the authors propose the utilization of linear projection methods: local Fisher discriminant analysis (LFDA) and LFDA combined with principal component analysis (PCA). After experimentally clarifying that raw power spectra are actually good for instrument classification, the authors reduced the feature dimensionality by LFDA or by PCA followed by LFDA (PCA-LFDA). The reduced features achieved reasonably high identification performance that was comparable or higher than those by the power spectra and those achieved by other existing studies. These results demonstrated that our LFDA and PCA-LFDA can successfully extract low-dimensional instrument features that maintain the characteristic information of the instruments.

  4. Structural Investigation of Biological and Semiconductor Nanostructures with Nonlinear Multicontrast Microscopy

    NASA Astrophysics Data System (ADS)

    Cisek, Richard

    Physical and functional properties of advanced nano-composite materials and biological structures are determined by self-organized atoms and molecules into nanostructures and in turn by microscopic organization of the nanostructures into assemblies of higher structural complexity. Therefore, microscopes are indispensable tools for structural investigations at various levels of organization. In this work, novel nonlinear optical microscopy methods were developed to non-invasively study structural organization at the nanoscopic and microscopic levels. Atomic organization of semiconductor nanowires, molecular organization of amylose biocrystallites in starch granules, and microscopic organization of several photosynthetic organisms was elucidated. The structure of ZnSe nanowires, key components in many modern nanodevices, was investigated using polarization harmonic generation microscopy. Based on nonlinear optical properties of the different crystal lattices, zinc blende and wurtzite nanowires were differentiated, and the three-dimensional orientation of the zinc blende nanowires could be found. The structure of starch granules, a model biocrystal, important in food as well as health sciences, was also investigated using polarization harmonic microscopy. The study was combined with ab initio calculations using the crystal structures of amylose A and B, revealing that second harmonic signals originate from the hydroxide and hydrogen bonds in the starch granules. Visualization of several photosynthetic organisms including the green algae, Chlamydomonas reinhardtii, two species of cyanobacteria, Leptolyngbya sp. and Anabaena sp., aggregates of light-harvesting pigment-protein complexes as well as chloroplasts from green plants were also explored, revealing that future nonlinear microscopy applications could include structural studies of cell walls, the Chlamydomonas eyespot, and photosynthetic membranes. In this study, several nonlinear optical microscopy modalities

  5. Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide

    SciTech Connect

    Goldman, E. I.; Levashova, A. I.; Levashov, S. A.; Chucheva, G. V.

    2015-04-15

    The possibilities of using the data of high-frequency measurements of the impedance of metal-oxide-semiconductor structures with an ultrathin insulating layer for determining the parameters of the semiconductor and the tunneling characteristics of the insulator are considered. If the accuracy of the experiment makes it possible to record both the active and reactive impedance components, the thickness of the surface depletion layer, the resistance of the semiconductor base portion, the differential tunnel conductivity of the insulating layer, and the differential tunneling-stimulated current of the generation of electron-hole pairs are calculated using the values of the capacitance and conduction of the structure measured at two frequencies. In the case, where the values of the active component of the impedance is beyond the accuracy of measurements, analysis of the parameters is possible upon four-frequency organization of the experiment from the values of only the capacitances with an increased accuracy of their measurements. A test for the necessary accuracy of data of such an experiment is formulated. If the test fails, it is possible to determine only the capacitance of the surface depletion layer in the semiconductor and, in this case, it is sufficient to implement only the single-frequency experiment.

  6. A new solution chemical method to make low dimensional thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Ding, Zhongfen

    2001-11-01

    Bismuth telluride and its alloys are currently the best thermoelectric materials known at room temperature and are therefore used for portable solid-state refrigeration. If the thermal electric figure of merit ZT could be improved by a factor of about 3, quiet and rugged solid-state devices could eventually replace conventional compressor based cooling systems. In order to test a theory that improved one-dimensional or two-dimensional materials could enhance ZT due to lower thermal conductivity, we are developing solution processing methods to make low dimensional materials. Bismuth telluride and its p-type and n-type alloys have layered structures consisting of 5 atom thick Te-Bi-Te-Bi-Te sheets, each sheet about 10 A thick. Lithium ions are intercalated into the layered materials using liquid ammonia. The lithium-intercalated materials are then exfoliated in water to form colloidal suspensions with narrow particle size distributions and are stable for more than 24 hours. The layers are then deposited on substrates, which after annealing at low temperatures, form highly c-axis oriented thin films. The exfoliated layers can potentially be restacked with other ions or layered materials in between the sheets to form novel structures. The restacked layers when treated with nitric acid and sonication form high yield nanorod structured materials. This new intercalation and exfoliation followed by sonication method could potentially be used for many other layered materials to make nanorod structured materials. The low dimensional materials are characterized by powder X-ray diffraction, atomic force microscopy (AFM), transmission electron microscopy (TEM), scanning electron microscopy (SEM), inductively coupled plasma (ICP) and dynamic light scattering.

  7. Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Stadnyk, Yu. V.; Korzh, R. O.; Krayovskyy, V. Ya.; Horyn, A. M.

    2014-12-15

    The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 80–400 K and N{sub A}{sup Ru} ≈ 9.5 × 10{sup 19}−5.7 × 10{sup 20} cm{sup −3} (x = 0–0.03), respectively. The mechanism of structural-defect generation is established, which changes the band gap and degree of compensation of the semiconductor and consists in the simultaneous concentration reduction and elimination of donor structural defects by means of the displacement of ∼1% of Ni atoms from the Hf (4a) positions, the generation of acceptor structural defects upon the substitution of Ru atoms for Ni atoms in the 4c positions, and the generation of donor defects in the form of vacancies in the Sn (4b) positions. The calculated electronic structure of HfNi{sub 1−x}Ru{sub x}Sn is consistent with the experiment. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.

  8. Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Kaczorowski, D.; Stadnyk, Yu. V.; Korzh, R. O.; Krayovskyy, V. Ya.; Kovbasyuk, T. M.

    2015-03-15

    The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N{sub A}{sup Lu} ≈ 1.9 × 10{sup 20}−1.9 × 10{sup 21} cm{sup −3} (x = 0.01–0.10) at H ≤ 10 kG is studied. The nature of the structural-defect generation mechanism leading to changes in the band gap and the degree of semiconductor compensation is determined. Its essence is the simultaneous reduction and elimination of donor-type structural defects due to the displacement of ∼1% of Ni atoms from the Hf (4a) site, the generation of acceptor-type structural defects by substituting Ni atoms with Lu atoms at the 4c site, and the generation of donor-type defects such as vacancies at the Sn (4b) site. The results of calculations of the electronic structure of Hf{sub 1−x}Lu{sub x}NiSn are in agreement with experimental data. The results are discussed within the model of a heavily doped and compensated Shklovskii-Efros semiconductor.

  9. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOEpatents

    Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2014-05-20

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  10. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOEpatents

    Rogers, John A.; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G.; Lee, Keon Jae; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young; Kan, Seong Jun; Ahn, Jong Hyun; Kim, Hoon-sik

    2012-07-10

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  11. Fabrication of surface-supported low-dimensional polyimide networks.

    PubMed

    Treier, Matthias; Richardson, Neville V; Fasel, Roman

    2008-10-29

    Interest in thermal and chemical stability of surface-supported organic networks has stimulated recent attempts to covalently interlink adsorbed molecular species into extended nanostructures. We show, using low-temperature scanning tunneling microscopy, that imidization of anhydrides and amines adsorbed on Au(111) can be thermally initiated under controlled ultrahigh vacuum conditions. Using two types of amine-functionalized polyphenyl molecules together with the organic semiconductor PTCDA, monolayer thick linear polymeric strands and a porous polymeric network with nanoscale dimensions are obtained. PMID:18826313

  12. Semiconductor Surface Structure Determination via Low Energy Positron Diffraction: Cleavage Faces of Cadmium-Selenide

    NASA Astrophysics Data System (ADS)

    Horsky, Thomas Neil

    Low energy positron diffraction (LEPD) is used to determine the surface structure of the wurtzite CdSe(1010) and CdSe(1120) cleavage faces. Low energy electron diffraction (LEED) is also performed, utilizing a beam optical system which produces both a e^+ and e ^- beam with the same phase-space characteristics, i.e. 1 mm-deg. Both e^+ and e^- measurements were collected from the same sample surface of each cleavage face, removing systematic errors from the comparison. Dynamical calculations were performed for both the LEPD and LEED using the R-factor methodology of Duke et al. For the (1010) surface, the calculations and analyses were performed at Brandeis via link to the John Von Neumann Supercomputer Center at Princeton, NJ. For the (1120) surface, the LEPD calculations and analysis was performed by Battelle Pacific Northwest Laboratories, while the LEED calculations were performed by Princeton University. Resulting surface structures for CdSe(1010) are in accord with the proposed reconstruction model of Wang and Duke, indicating a bond-length-conserving rotation of the surface dimer. The best-fit values of the bond-rotation angle omega are 15^circ +/- 5^circ as determined by LEPD and omega = 21.5^ circ +/- 4^ circ as determined by LEED. These values are in agreement with the predicted value of omega = 17^circ. For CdSe(1120), the best-fit LEPD results indicate an omega of 27^circ +/- 7^circ while preliminary LEED results indicate an omega of 35^circ +/- 5^circ. Both values for this previously undetermined surface are also in agreement with the theoretically predicted value of omega = 32^circ . These results serve to confirm a universal model of reconstruction which describes the surface structures of both the zincblende and wurtzite compound semiconductor cleavage faces.

  13. Controlling Light-Matter Interaction in Semiconductors with Hybrid Nano-Structures

    NASA Astrophysics Data System (ADS)

    Gehl, Michael R.

    Nano-structures, such as photonic crystal cavities and metallic antennas, allow one to focus and store optical energy into very small volumes, greatly increasing light-matter interactions. These structures produce resonances which are typically characterized by how well they confine energy both temporally (quality factor -- Q) and spatially (mode volume -- V). In order to observe non-linear effects, modified spontaneous emission (e.g. Purcell enhancement), or quantum effects (e.g. vacuum Rabi splitting), one needs to maximize the ratio of Q/V while also maximizing the coupling between the resonance and the active medium. In this dissertation I will discuss several projects related by the goal of controlling light-matter interactions using such nano-structures. In the first portion of this dissertation I will discuss the deterministic placement of self-assembled InAs quantum dots, which would allow one to precisely position an optically-active material, for maximum interaction, inside of a photonic crystal cavity. Additionally, I will discuss the use of atomic layer deposition to tune and improve both the resonance wavelength and quality factor of silicon based photonic crystal cavities. Moving from dielectric materials to metals allows one to achieve mode-volumes well below the diffraction limit. The quality factor of these resonators is severely limited by Ohmic loss in the metal; however, the small mode-volume still allows for greatly enhanced light-matter interaction. In the second portion of this dissertation I will investigate the coupling between an array of metallic resonators (antennas) and a nearby semiconductor quantum well. Using time-resolved pump-probe measurements I study the properties of the coupled system and compare the results to a model which allows one to quantitatively compare various antenna geometries.

  14. Multi-immunosensors based on electrolite-insulator-semiconductor structures for determination of some herbicides

    NASA Astrophysics Data System (ADS)

    Starodub, Nickolaj F.; Starodub, Valentyna M.; Krivenchuk, Vladimir E.; Shapovalenko, Valentyna F.

    2002-02-01

    New type of the multi-immune sensor was elaborated. It is based on electrolyte-insulator-semiconductors structures and intended for determination of such herbicides as simazine, atrazine and 2,4-D. The specific antibodies were immobilized on nitrocellulose disks, which were placed in measuring cells. The analysis was fulfilled by sequential saturation of antibodies, left unbound after their exposure to native herbicide in investigated sample, with labelled herbicide. If horse radish peroxidase (HRP) was used as label the sensitivity of this multi-immune sensor was about 5 and 1.25 (mu) g/L for simazine and 2,4-D, respectively. At the changing of HRP by (beta) -glucose oxidase the sensitivity of analysis of these herbicides increased approximately in 5 times. The linear plots of the registered concentrations were in the range of 1,0-150,0 and 0,25-150,0 ng/mL for simazine and 2,4-D respectively. It was recommended to use the developed immune sensor for wide screening of herbicides in environment. The ways for increasing of its sensitivity were proposed.

  15. Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

    PubMed

    Shang, Jingzhi; Shen, Xiaonan; Cong, Chunxiao; Peimyoo, Namphung; Cao, Bingchen; Eginligil, Mustafa; Yu, Ting

    2015-01-27

    Two-dimensional (2D) semiconductors, such as transition-metal dichalcogenide monolayers (TMD 1Ls), have attracted increasing attention owing to the underlying fundamental physics (e.g., many body effects) and the promising optoelectronic applications such as light-emitting diodes. Though much progress has been made, intrinsic excitonic states of TMD 1Ls are still highly debated in theory, which thirsts for direct experimental determination. Here, we report unconventional emission and excitonic fine structure in 1L WS2 revealed by electrical doping and photoexcitation, which reflects the interplay of exciton, trion, and other excitonic states. Tunable excitonic emission has been realized in a controllable manner via electrical and/or optical injection of charge carriers. Remarkably enough, the superlinear (i.e., quadratic) emission is unambiguously observed which is attributed to biexciton states, indicating the strong Coulomb interactions in such a 2D material. In a nearly neutral 1L WS2, trions and biexcitons possess large binding energies of ∼ 10-15 and 45 meV, respectively. Moreover, our finding of electrically induced robust emission opens up a possibility to boost the luminous efficiency of emerging 1L TMD light emitting diodes. PMID:25560634

  16. Influence of structural fluctuations on lifetimes of adsorbate states at hybrid organic-semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Müller, M.; Sánchez-Portal, D.; Lin, H.; Fratesi, G.; Brivio, G. P.; Selloni, A.

    On the road towards a more realistic description of charge transfer processes at hybrid organic-semiconductor interfaces for photovoltaic applications we extend our first-principles scheme for the extraction of elastic linewidths to include the effects of structural fluctuations. Based on snapshots obtained from Car-Parinello molecular dynamics simulations at room temperature, we set up geometries in which dye molecules at interfaces are attached to a semi-infinite TiO2 substrate. The elastic linewidths are computed using a Green's function method. This effectively introduces the coupling to a continuum of states in the substrate. In particular we investigate catechol and isonicotinic acid on rutile(110) and anatase(101) at the level of semi-local density functional theory. We perform multiple calculations of linewidths and peak-positions associated with the adsorbate's frontier orbitals for different geometric configurations to obtain a time-averaged analysis of such physical properties. We compare the results from the considered systems to understand the effects of dynamics onto interfacial charge transfer and systematically assess the dependence of the extracted elastic lifetimes on the relative alignment between adsorbate and substrate states. This project has received funding from the European Union Seventh Framework Programme under Grant Agreement No. 607323 [THINFACE].

  17. Interacting quasi-band theory for electronic states in compound semiconductor alloys: Wurtzite structure

    NASA Astrophysics Data System (ADS)

    Kishi, Ayaka; Oda, Masato; Shinozuka, Yuzo

    2016-05-01

    This paper reports on the electronic states of compound semiconductor alloys of wurtzite structure calculated by the recently proposed interacting quasi-band (IQB) theory combined with empirical sp3 tight-binding models. Solving derived quasi-Hamiltonian 24 × 24 matrix that is characterized by the crystal parameters of the constituents facilitates the calculation of the conduction and valence bands of wurtzite alloys for arbitrary concentrations under a unified scheme. The theory is applied to III–V and II–VI wurtzite alloys: cation-substituted Al1‑ x Ga x N and Ga1‑ x In x N and anion-substituted CdS1‑ x Se x and ZnO1‑ x S x . The obtained results agree well with the experimental data, and are discussed in terms of mutual mixing between the quasi-localized states (QLS) and quasi-average bands (QAB): the latter bands are approximately given by the virtual crystal approximation (VCA). The changes in the valence and conduction bands, and the origin of the band gap bowing are discussed on the basis of mixing character.

  18. Synthesis and Structure Determination of Ferromagnetic Semiconductors LaAMnSnO6 (A = Sr Ba)

    SciTech Connect

    T Yang; T Perkisas; J Hadermann; M Croft; A Ignatov; M Greenblatt

    2011-12-31

    LaAMnSnO{sub 6} (A = Sr, Ba) have been synthesized by high temperature solid-state reactions under dynamic 1% H{sub 2}/Ar flow. Rietveld refinements on room temperature powder X-ray diffraction data indicate that LaSrMnSnO{sub 6} crystallizes in the GdFeO{sub 3}-structure, with space group Pnma and, combined with transmission electron microscopy, LaBaMnSnO{sub 6} in Imma. Both space groups are common in disordered double-perovskites. The Mn{sup 3+} and Sn{sup 4+} ions whose valence states were confirmed by X-ray absorption spectroscopy, are completely disordered over the B-sites and the BO{sub 6} octahedra are slightly distorted. LaAMnSnO{sub 6} are ferromagnetic semiconductors with a T{sub C} = 83 K for the Sr- and 66 K for the Ba-compound. The title compounds, together with the previously reported LaCaMnSnO{sub 6} provide an interesting example of progression from Pnma to Imma as the tolerance factor increases. An analysis of the relationship between space group and tolerance factor for the series LaAMnMO{sub 6} (A = Ca, Sr, Ba; M = Sn, Ru) provides a better understanding of the symmetry determination for double perovskites.

  19. Nonlinear transport of semi-insulating GaAs in a semiconductor gas discharge structure

    NASA Astrophysics Data System (ADS)

    Yücel Kurt, H.; Salamov, B. G.

    2007-12-01

    Nonlinear transport of a semi-insulating (SI) GaAs photodetector in a semiconductor gas discharge structure (SGDS) is studied experimentally for a wide range of gas pressures p, interelectrode distances d and different diameters D of the detector areas. While being driven with a stationary voltage, the system generates current and discharge light emission (DLE) instabilities with different amplitudes of the oscillations. The transformation of the profile and amplitude of the current density of the filaments in the different regions of the current-voltage characteristic (CVC) has been studied. Instabilities of spatially non-uniform distributions resulting in the formation of multiple current filaments with increasing voltages above the critical values have been observed. It is shown that the interelectrode distance only plays a passive role and is not responsible for the appearance of the DLE instability under the experimental conditions. At the same time, the expanded range of current and DLE oscillations are observed for different diameters D of the infrared (IR) photodetector areas. An SGDS with an N-shaped CVC is analysed using both the current and DLE data which show the electrical instability in the GaAs photodetector. It is found that the application of high feeding voltage to this photodetector gives rise to a non-uniform spatial distribution of the DLE, which disturbs the operation of the system. The experiment also presents a new method to study and visualize the electrical instabilities in a high-resistivity IR photodetector of large diameter.

  20. Wavefunction Properties and Electronic Band Structures of High-Mobility Semiconductor Nanosheet MoS2

    NASA Astrophysics Data System (ADS)

    Baik, Seung Su; Lee, Hee Sung; Im, Seongil; Choi, Hyoung Joon; Ccsaemp Team; Edl Team

    2014-03-01

    Molybdenum disulfide (MoS2) nanosheet is regarded as one of the most promising alternatives to the current semiconductors due to its significant band-gap and electron-mobility enhancement upon exfoliating. To elucidate such thickness-dependent properties, we have studied the electronic band structures of bulk and monolayer MoS2 by using the first-principles density-functional method as implemented in the SIESTA code. Based on the wavefunction analyses at the conduction band minimum (CBM) points, we have investigated possible origins of mobility difference between bulk and monolayer MoS2. We provide formation energies of substitutional impurities at the Mo and S sites, and discuss feasible electron sources which may induce a significant difference in the carrier lifetime. This work was supported by NRF of Korea (Grant Nos. 2009-0079462 and 2011-0018306), Nano-Material Technology Development Program (2012M3a7B4034985), and KISTI supercomputing center (Project No. KSC-2013-C3-008). Center for Computational Studies of Advanced Electronic Material Properties.

  1. Structural, magnetic, and transport properties of (Zn,V)Te semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Weigang; Ni, Chaoying; Zhu, Tao; Zhang, Huiwu; Xiao, John Q.

    2006-04-01

    Vanadium-doped ZnTe has been predicted to be one of the candidates for ferromagnetic semiconductors with a high Curie temperature [K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002)]. In this paper, we report the structural, magnetic, and transport properties of (Zn,V)Te films prepared by magnetron sputtering. Samples were fabricated on both GaAs and thermally oxidized silicon substrate at elevated temperature. Oriented sample (100) can be achieved on GaAs substrates and only polycrystalline samples are observed on Si substrates. X-ray diffraction (XRD) and transmission electron spectroscopy (TEM) show no magnetic precipitates in the (Zn,V)Te film. The magnetization measurement shows that the oriented sample is paramagnetic at 5 K, while films on Si substrate shows weak ferromagnetism at 5 K. The sign of magnetoresistance (MR=[R(H)-R(0)]/R(0)) gradually changes from negative to positive with temperature, and positive MR at high temperatures shows H2 dependence, indicating ordinary MR effect. It is believed the observed negative MR corresponds to the ferromagnetic ordering at lower temperature.

  2. Proton tunneling in low dimensional cesium silicate LDS-1

    SciTech Connect

    Matsui, Hiroshi Iwamoto, Kei; Mochizuki, Dai; Osada, Shimon; Asakura, Yusuke; Kuroda, Kazuyuki

    2015-07-14

    In low dimensional cesium silicate LDS-1 (monoclinic phase of CsHSi{sub 2}O{sub 5}), anomalous infrared absorption bands observed at 93, 155, 1210, and 1220 cm{sup −1} are assigned to the vibrational mode of protons, which contribute to the strong hydrogen bonding between terminal oxygen atoms of silicate chain (O–O distance = 2.45 Å). The integrated absorbance (oscillator strength) for those modes is drastically enhanced at low temperatures. The analysis of integrated absorbance employing two different anharmonic double-minimum potentials makes clear that proton tunneling through the potential barrier yields an energy splitting of the ground state. The absorption bands at 93 and 155 cm{sup −1}, which correspond to the different vibrational modes of protons, are attributed to the optical transition between the splitting levels (excitation from the ground state (n = 0) to the first excited state (n = 1)). Moreover, the absorption bands at 1210 and 1220 cm{sup −1} are identified as the optical transition from the ground state (n = 0) to the third excited state (n = 3). Weak Coulomb interactions in between the adjacent protons generate two types of vibrational modes: symmetric mode (93 and 1210 cm{sup −1}) and asymmetric mode (155 and 1220 cm{sup −1}). The broad absorption at 100–600 cm{sup −1} reveals an emergence of collective mode due to the vibration of silicate chain coupled not only with the local oscillation of Cs{sup +} but also with the proton oscillation relevant to the second excited state (n = 2)

  3. Asymmetrically contacted germanium photodiode using a metal-interlayer-semiconductor-metal structure for extremely large dark current suppression.

    PubMed

    Zang, Hwan-Jun; Kim, Gwang-Sik; Park, Gil-Jae; Choi, Yong-Soo; Yu, Hyun-Yong

    2016-08-15

    In this study, we proposed germanium (Ge) metal-interlayer-semiconductor-metal (MISM) photodiodes (PD), with an anode of a metal-interlayer-semiconductor (MIS) contact and a cathode of a metal-semiconductor (MS) contact, to efficiently suppress the dark current of Ge PD. We selected titanium dioxide (TiO2) as an interlayer material for the MIS contact, due to its large valence band offset and negative conduction band offset to Ge. We significantly suppress the dark current of Ge PD by introducing the MISM structure with a TiO2 interlayer, as this enhances the hole Schottky barrier height, and thus acts as a large barrier for holes. In addition, it collects photo-generated carriers without degradation, due to its negative conduction band offset to Ge. This reduces the dark current of Ge MISM PDs by ×8000 for 7-nm-thick TiO2 interlayer, while its photo current is still comparable to that of Ge metal-semiconductor-metal (MSM) PDs. Furthermore, the proposed Ge PD shows ×6,600 improvement of the normalized photo-to-dark-current ratio (NPDR) at a wavelength of 1.55 μm. The proposed Ge MISM PD shows considerable promise for low power and high sensitivity Ge-based optoelectronic applications. PMID:27519063

  4. Structural defect generation and band-structure features in the HfNi{sub 1−x}Co{sub x}Sn semiconductor

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Stadnyk, Yu. V.; Krayovskyy, V. Ya.; Kaczorowski, D.; Nakonechnyy, I. N.; Goryn, A. M.

    2015-08-15

    The crystal and electronic structure and magnetic, energy, and kinetic properties of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity (HfNi{sub 1−x}Co{sub x}Sn) are investigated in the temperature and Co concentration ranges T = 80–400 K and N{sub A}{sup Co} ≈ 9.5 × 10{sup 19}-5.7 × 10{sup 21} cm{sup −3} (x = 0.005–0.30), respectively, and under magnetic field H ≤ 10 kOe. It is established that the degree of compensation of the semiconductor changes due to transformation of the crystal structure upon doping, which leads to the generation of acceptor and donor structural defects. The calculated electronic structure is consistent with the experiment; the HfNi{sub 1−x}Co{sub x}Sn semiconductor is shown to be a promising thermoelectric material. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.

  5. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    NASA Astrophysics Data System (ADS)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  6. A first principles study of the lattice stability of diamond-structure semiconductors under intense laser irradiation

    SciTech Connect

    Feng Shiquan; Zhao Jianling; Cheng Xinlu

    2013-01-14

    Using density-functional linear-response theory, we calculated the phonon dispersion curves for the diamond structural elemental semiconductors of Ge, C and zinc-blende structure semiconductors of GaAs, InSb at different electronic temperatures. We found that the transverse-acoustic phonon frequencies of C and Ge become imaginary as the electron temperature is elevated, which means the lattices of C and Ge become unstable under intense laser irradiation. These results are very similar with previous theoretical and experimental results for Si. For GaAs and InSb, not only can be obtained the similar results for their transverse-acoustic modes, but also their LO-TO splitting gradually decreases as the electronic temperature is increased. It means that the electronic excitation weakens the strength of the ionicity of ionic crystal under intense laser irradiation.

  7. Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts

    SciTech Connect

    Hegde, Ganesh Chris Bowen, R.

    2014-08-04

    The effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding calculations. It is shown that the “ideal metal” assumption may fail in some situations and, consequently, underestimate the lower limit of contact resistivity in n-Si by at least an order of magnitude at high doping concentrations. The mismatch in transverse momentum space in the metal and the semiconductor, the so-called “valley filtering effect,” is shown to be sensitive to the details of the transverse boundary conditions for the unit cells used. The results emphasize the need for explicit inclusion of the metal atomic and electronic structure in the atomistic modeling of transport across metal-semiconductor contacts.

  8. Electromagnetic metamaterial-inspired band gap and perfect transmission in semiconductor and graphene-based electronic and photonic structures

    NASA Astrophysics Data System (ADS)

    Mahdy, M. R. C.; Al Sayem, Ayed; Shahriar, Arif; Shawon, Jubayer; Al-Quaderi, Golam Dastegir; Jahangir, Ifat; Matin, M. A.

    2016-04-01

    In this article, at first we propose a unified and compact classification of single negative electromagnetic metamaterial-based perfect transmission unit cells. The classes are named as: type-A, -B and -C unit cells. Then based on the classification, we have extended these ideas in semiconductor and graphene regimes. For type-A: Based on the idea of electromagnetic Spatial Average Single Negative bandgap, novel bandgap structures have been proposed for electron transmission in semiconductor heterostructures. For type-B: with dielectric-graphene-dielectric structure, almost all angle transparency is achieved for both polarizations of electromagnetic wave in the terahertz frequency range instead of the conventional transparency in the microwave frequency range. Finally the application of the gated dielectric-graphene-dielectric has been demonstrated for the modulation and switching purpose.

  9. Three-mode entanglement via tunneling-induced interference in a coupled triple-semiconductor quantum-well structure

    SciTech Connect

    Lue Xinyou; Wu Jing

    2010-07-15

    A simple scheme is proposed to achieve three-mode continuous-variable (CV) entanglement in a coupled triple-semiconductor quantum-well (TSQW) structure via tunneling-induced interference. In the present scheme, the TSQW structure is trapped into a triply resonant cavity, and the tunneling-induced interference effects considered here are the key to realizing entanglement. By numerically simulating the dynamics of the system, we show that the strength of tunneling-induced interference can effectively influence the period of entanglement, and the generation of entanglement does not depend intensively on the initial condition of the cavity field in our scheme. As a result, the present research provides an efficient approach to achieve three-mode CV entanglement in a semiconductor nanostructure, which may have an impact on the progress of solid-state quantum-information theory.

  10. Low-dimensional hyperthin FeS2 nanostructures for efficient and stable hydrogen evolution electrocatalysis

    DOE PAGESBeta

    Jasion, Daniel; Qiao, Qiao; Barforoush, Joseph M.; Zhu, Yimei; Ren, Shenqiang; Leonard, Kevin C.

    2015-10-05

    We report a scalable, solution-processing method for synthesizing low-dimensional hyperthin FeS2 nanostructures, and we show that 2D FeS2 disc nanostructures are an efficient and stable hydrogen evolution electrocatalyst. By changing the Fe:S ratio in the precursor solution, we were able to preferentially synthesize either 1D wire or 2D disc nanostructures. The 2D FeS2 disc structure has the highest electrocatalytic activity for the hydrogen evolution reaction, comparable to platinum in neutral pH conditions. Moreover, the ability of the FeS2 nanostructures to generate hydrogen was confirmed by scanning electrochemical microscopy, and the 2D disc nanostructures were able to generate hydrogen for overmore » 125 h.« less

  11. Low dimensional magnetic solids and single crystal elpasolites: Need for improved crystal growing techniques

    NASA Technical Reports Server (NTRS)

    Good, M. L.; Watkins, S.; Schwartz, R. W.

    1979-01-01

    The need for extensive crystal growing experiments to develop techniques for preparing crystals suitable for magnetic anisotropy measurements and detailed X-ray and neutron diffraction studies is rationalized on the basis of the unique magnetic properties of the materials and their hydrogen bonded structures which have many features in common with metalloenzyme and metalloprotein active sites. Single crystals of the single and mixed lanthanide species are prepared by the Bridgeman technique of gradient solidification of molten samples. The effects of crystal imperfections on the optical properties of these materials are an important part of the projected research. A series of a-amido acid complexes of first row transition metals were prepared which crystallize as infinite linear chains and exhibit low dimensional magnetic ordering (one or two) at temperature below 40 K.

  12. Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

    2014-12-01

    Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm-320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ˜75% UV absorption and hot electron excitation can be achieved within the mean free path of ˜20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices.

  13. Quantum states of charge carriers and longitudinal conductivity in double periodic n-type semiconductor lattice structures in electric field

    SciTech Connect

    Perov, A. A. Penyagin, I. V.

    2015-07-15

    Quantum states of charge carriers in double periodic semiconductor superlattices of n-type quantum dots with Rashba spin–orbit coupling in an electron gas have been calculated in the one-electron approximation in the presence of mutually perpendicular electric and magnetic fields. For these structures in weak constant electric field, the solution to the quasi-classical kinetic Boltzmann equation shows that the states of carriers in magnetic Landau minibands with negative differential conductivity are possible.

  14. Transport and optical properties of low-dimensional complex systems

    NASA Astrophysics Data System (ADS)

    Iurov, Andrii

    Over the last five years of my research work, I, my research was mainly concerned with certain crucial tunneling, transport and optical properties of novel low-dimensional graphitic and carbon-based materials as well as topological insulators. Both single-electron and many-body problems were addressed. We investigated the Dirac electrons transmission through a potential barrier in the presence of circularly polarized light. An anomalous photon-assisted enhanced transmission is predicted and explained in a comparison with the well-known Klein paradox. It is demonstrated that the perfect transmission for nearly-head-on collision in an infinite graphene is suppressed in gapped dressed states of electrons, which is further accompanied by shift of peaks as a function of the incident angle away from the head-on collision. We calculate the energy bands for graphene monolayers when electrons move through a periodic electrostatic potential in the presence of a uniform perpendicular magnetic field. We clearly demonstrate the quantum fractal nature of the energy bands at reasonably low magnetic fields. We present results for the energy bands as functions of both wave number and magnetic flux through the unit cells of the resulting moiŕe superlattice. This feature is also observed at extremely high magnetic fields. We have discovered a novel feature in the plasmon excitations for a pair of Coulomb-coupled non-concentric spherical two-dimensional electron gases (S2DEGs). Our results show that the plasmon excitations for such pairs depend on the orientation with respect to the external electromagnetic probe field. The origin of this anisotropy of the inter-sphere Coulomb interaction is due to the directional asymmetry of the electrostatic coupling of electrons in excited states which depend on both the angular momentum quantum number L and its projection M on the axis of quantization taken as the probe E-field direction. Such an effect from the plasmon spatial correlation is

  15. Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-02-01

    Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal-insulator-semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the semiconductor are determined by measuring the admittance of MIS structures in the frequency range of 50 kHz to 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded gap layer demonstrate a high-frequency behavior with respect to the recharge time of surface states located near the Fermi level for an intrinsic semiconductor. The formation time of the inversion layer is decreased by less than two times, if a near-surface graded-gap layer is created. The dopant distribution profile in the near-surface layer of the semiconductor is found, and it is shown that for structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has a minimum near the interface with the insulator. For MIS structure based on n-Hg0.78Cd0.22Te, the dopant concentration is more uniformly distributed in the near-surface layer of the semiconductor.

  16. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    NASA Astrophysics Data System (ADS)

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  17. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  18. Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties

    NASA Astrophysics Data System (ADS)

    Uddin, M. R.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-03-01

    Hexagonal boron nitride carbon, h(BN)1-x(C2)x, semiconductor alloys have been grown on sapphire substrates by metal-organic chemical vapor deposition. Bandgap tuning through compositional variation has been demonstrated via optical absorption measurements. Furthermore, an enhancement of approximately 10 orders of magnitude in the electrical conductivity has been attained by increasing the carbon concentration (x) from 0 to 0.21. Experimental results revealed evidences that the critical carbon concentration xc to form the homogenous h(BN)1-x(C2)x alloys, or the carbon solubility in hBN is about 3.2% at a growth temperature of 1300 °C before carbon clusters form. Based on the predicted phase diagram of cubic (BN)1-x(C2)x and the excellent matches in the structural and thermal properties of hBN and graphite, it is expected that homogenous h(BN)1-x(C2)x alloys with higher x can be achieved and the alloy miscibility gap can be reduced or completely removed by increasing the growth temperature. This is a huge advantage over the InGaN alloy system in which InN decomposes at high temperatures and high growth temperature cannot be utilized to close the miscibility gap. The results indicate that the h(BN)1-x(C2)x alloy system has the potential to tackle the challenging issues facing the emerging two-dimension materials beyond graphene, which include realizing the bandgap engineering, conductivity control, and large wafers of homogeneous films.

  19. Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties

    SciTech Connect

    Uddin, M. R.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-03-07

    Hexagonal boron nitride carbon, h(BN){sub 1-x}(C{sub 2}){sub x}, semiconductor alloys have been grown on sapphire substrates by metal-organic chemical vapor deposition. Bandgap tuning through compositional variation has been demonstrated via optical absorption measurements. Furthermore, an enhancement of approximately 10 orders of magnitude in the electrical conductivity has been attained by increasing the carbon concentration (x) from 0 to 0.21. Experimental results revealed evidences that the critical carbon concentration x{sub c} to form the homogenous h(BN){sub 1-x}(C{sub 2}){sub x} alloys, or the carbon solubility in hBN is about 3.2% at a growth temperature of 1300 °C before carbon clusters form. Based on the predicted phase diagram of cubic (BN){sub 1-x}(C{sub 2}){sub x} and the excellent matches in the structural and thermal properties of hBN and graphite, it is expected that homogenous h(BN){sub 1-x}(C{sub 2}){sub x} alloys with higher x can be achieved and the alloy miscibility gap can be reduced or completely removed by increasing the growth temperature. This is a huge advantage over the InGaN alloy system in which InN decomposes at high temperatures and high growth temperature cannot be utilized to close the miscibility gap. The results indicate that the h(BN){sub 1-x}(C{sub 2}){sub x} alloy system has the potential to tackle the challenging issues facing the emerging two-dimension materials beyond graphene, which include realizing the bandgap engineering, conductivity control, and large wafers of homogeneous films.

  20. Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method

    NASA Astrophysics Data System (ADS)

    Toumi, S.; Ouennoughi, Z.; Strenger, K. C.; Frey, L.

    2016-08-01

    Current conduction mechanisms through a Metal-Oxide-Semiconductor structure are characterized via Fowler-Nordheim (FN) plots. The extraction of the FN parameters like the electron/hole effective mass in oxide mox and in semiconductor msc, the barrier height at the semiconductor-oxide interface ϕB, and the correction oxide voltage Vcorr for a MOS structure is made using a vertical optimization process on the current density without any assumption about ϕB or mox. An excellent agreement is obtained between the FN plots calculated with the FN parameters extracted using a vertical optimization process with the experimental one.

  1. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  2. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    DOE PAGESBeta

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizingmore » the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.« less

  3. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  4. Physical properties of low-dimensional sp 2 -based carbon nanostructures

    NASA Astrophysics Data System (ADS)

    Meunier, V.; Souza Filho, A. G.; Barros, E. B.; Dresselhaus, M. S.

    2016-04-01

    The last two decades have witnessed a tremendous growth in the development and understanding of sp 2 carbon-based nanostructures. The impact of this research has led to a number of fundamental discoveries that have played a central role in the understanding of many aspects of materials physics and their applications. Much of this progress has been enabled by the development of new techniques to prepare, modify, and assemble low-dimensional materials into devices. The field has also benefited greatly from much progress in theoretical and computational modeling, as well as from advances in characterization techniques developed to probe and manipulate single atomic layers, nanoribbons, and nanotubes. Some of the most fundamental physical properties of sp2 carbon-based nanostructures are reviewed and their role as model systems for solid-state physics in one and two dimensions is highlighted. The objective of this review is to provide a thorough account on current understanding of how the details of the atomic structure affect phonons, electrons, and transport in these nanomaterials. The review starts with a description of the behavior of single-layer and few-layer graphene and then expands into the analysis of nanoribbons and nanotubes in terms of their reduced dimensionality and curvature. How the properties can be modified and tailored for specific applications is then discussed. The review concludes with a historical perspective and considers some open questions concerning future directions in the physics of low-dimensional systems and their impact on continued advances in solid-state physics, and also looks beyond carbon nanosystems.

  5. New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10 nm Devices

    NASA Astrophysics Data System (ADS)

    Tomohisa Mizuno,; Naoki Mizoguchi,; Kotaro Tanimoto,; Tomoaki Yamauchi,; Mitsuo Hasegawa,; Toshiyuki Sameshima,; Tsutomu Tezuka,

    2010-04-01

    We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary metal-oxide-semiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O+ ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without polycrystallizing the semiconductor layers, by optimizing O+ ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets Δ EC and Δ EV can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channel-strained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing Δ EC. Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices.

  6. GHz - THz plasmonic circuits using low dimensional electronic systems

    NASA Astrophysics Data System (ADS)

    Ham, Donhee

    2012-02-01

    Nature offers a broad variety of plasma systems consisting of electrons unbound from atoms, e.g.; astrophysical plasmas in intergalactic, interstellar, and stellar media; the Earth's ionosphere; and solid-state plasma, the free electrons in metals and semiconductors, only to name a few. A key feature of many plasma systems is collective motions of electrons; as the electron density profile is perturbed from equilibrium, Coulomb restoring forces (and sometimes quantum pressure in dense plasma) arise to power these collective motions, usually in the form of bulk electron density oscillations or electron density waves. Solid-state plasmas are particularly interesting, as the fabrication technologies available for solid-state materials allow us to alter the boundaries and interfaces of the plasma media in various ways to engineer the collective motion. A notable example is the surface plasmons, which have been a source of many breakthroughs in photonics. I will talk about a set of our recent developments where the plasmons are brought down to the electronics-regime (GHz˜THz) and manipulated to produce a range of functionalities, while offering unique advantages to electronics over their purely electromagnetic counterparts. (Co-workers) William Andress (Harvard), Hosang Yoon (Harvard), Kitty Yeung (Harvard), Ling Qin (Harvard), Ken West (Princeton), and Loren Pfeiffer (Princeton).

  7. Extended line defects in BN, GaN, and AlN semiconductor materials: Graphene-like structures

    NASA Astrophysics Data System (ADS)

    Camacho-Mojica, Dulce C.; López-Urías, Florentino

    2016-05-01

    The extended line defect (ELD) mimicking grain boundaries in two-dimensional systems is theoretically investigated in BN, GaN, and AlN semiconductor materials with a single layer honeycomb structure. The ELD consists of octagonal-square membered rings. Density functional calculations of the electronic density of states, scanning tunneling microscopy and transmission electron microscopy image simulations are analyzed. Our results revealed that the ELDs are stable in all considered monolayers. In addition, electronic density of states calculations demonstrated that in gap states are emerged when ELD is incorporated into the honeycomb structures. Finally, results on armchair nanoribbons with bare-edges and hydrogenated edges are discussed.

  8. Ab initio predictions of the stability and structural properties of zincblende (III,TM)V magnetic semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Caetano, C.; Pela, R. R.; Martini, S.; Marques, M.; Teles, L. K.

    2016-05-01

    First-principles calculations and statistical methods were combined to study electronic, magnetic, thermodynamic and structural properties of zincblende (III,Mn)V and (III,Cr)V magnetic semiconductor alloys, including both nitride and arsenide alloys. From phase diagrams it was observed that nitride alloys are much less stable than arsenide ones, although the former ones have more localized d-states at the Fermi level. It was observed that all alloys present an anisotropic behavior, with the strongest magnetic interaction in the < 110 > direction. The relationship between the structural properties of these alloys and their electronic and magnetic characteristics (i.e., their half-metallicity) was investigated.

  9. TEM Study of the Growth Mechanism, Phase Transformation, and Core/shell Structure of Semiconductor Nanowires

    NASA Astrophysics Data System (ADS)

    Wong, Tai Lun

    fast and completed instantly due to high temperature annealing. Furthermore, the phase transformation preferred to begin at the defect and bending region of the nanowires, as the nickel can easily diffuse through the native oxide on the Si nanowires rather than the other regions. By removing the native oxide on the Si nanowires using HF, the temperature required for the phase transformation was decreased significantly. However, without the native oxide, the phase transformation became a multi-site nucleation process, and the nanowire became a polycrystalline and multiphase nickel silicide nanowires after the reaction. A simple and effective method is developed for fabricating high-quality vertically aligned ZnO nanowire arrays using carbonized photoresists. ZnO nanowires fabricated by this method show excellent alignment, crystal quality, and optical properties that are independent of the substrates. We further fabricated vertically aligned ZnO/a-Si core-shell heterojunction nanowire arrays through direct chemical vapor deposition (CVD) of amorphous silicon on ZnO nanowire surfaces. The thickness of the a-Si shells linearly increases with deposition time and the deposition rate was about 5nm/min at 530 °C. Since the Si shell is p-type and the ZnO core is intrinsic n-type semiconductors, the ZnO/ amorphous silicon core-shell nanowires naturally formed hetero p-n junctions. The antireflection property of the ZnO/amorphous silicon core-shell nanowires is dramatically enhanced due to the rough interface between the ZnO and amorphous silicon. Additionally, the intensity of the Photoluminescence spectrum of ZnO/amorphous silicon core-shell structures is decreasing with the thickness of the amorphous silicon shell increases.

  10. Centrifugation-based Purification of Emerging Low-dimensional Materials and Their Thin-film Applications

    NASA Astrophysics Data System (ADS)

    Seo, Jung Woo

    Polydispersity in low-dimensional materials offers many interesting challenges and properties. In particular, the one- and two-dimensional carbon allotropes such as carbon nanotubes and graphene have demonstrated exquisite optoelectronic properties that are highly sensitive to their physical structures, where subtle variations in diameter and thickness render them with significantly different electronic band structures. Thus, the carbon nanomaterials have been the subject of extensive studies that address their polydispersity issues. Among these, solution-phase, buoyant density-based methods such as density gradient ultracentrifugation have been widely utilized to enrich subpopulations of carbon nanotubes and graphene with narrow distribution in diameter and thickness, enabling their applications in various next-generation thin-film devices. In this thesis, I present further advancement of centrifugation-based processing methods for emerging low-dimensional materials through systematic utilization of previously explored surfactant systems, development of novel surfactant types, and study of correlation between the chemical structure of surfactants and the dispersion and optoelectronic properties of the nanomaterials. First, I employ an iterative density gradient ultracentrifugation with a combination of anionic surfactants and addition of excess counter-ions to achieve isolation of novel diameter species of semiconducting single-walled carbon nanotubes. The purification of carbon nanotubes with simultaneous, ultrahigh-purity refinement in electronic type and diameter distribution leads to collaborative studies on heat distribution characteristics and diameter-dependent direct current and radio frequency performances in monodisperse carbon nanotube thin-film transistors. Next, I develop the use of non-ionic polymeric surfactants for centrifugation-based processes. Specifically, I utilize polypropylene and polyethylene oxide-based block copolymers with density

  11. Spin injection into semiconductors

    NASA Astrophysics Data System (ADS)

    Oestreich, M.; Hübner, J.; Hägele, D.; Klar, P. J.; Heimbrodt, W.; Rühle, W. W.; Ashenford, D. E.; Lunn, B.

    1999-03-01

    The injection of spin-polarized electrons is presently one of the major challenges in semiconductor spin electronics. We propose and demonstrate a most efficient spin injection using diluted magnetic semiconductors as spin aligners. Time-resolved photoluminescence with a Cd0.98Mn0.02Te/CdTe structure proves the feasibility of the spin-alignment mechanism.

  12. Low Dimensional Oxygen Vacancy Ordering and Diffusion in SrCrO3-δ

    NASA Astrophysics Data System (ADS)

    Ong, Phuong Vu; Sushko, Peter V.; Physical; Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 9 Team

    Oxygen vacancies (VO) are known to strongly affect the structure and electronic properties of complex oxides. An ability to control local concentration and spatial distribution of the vacancies, as well as stability and dimensionality of their aggregates, would enable generating novel materials functionalities, such as fast directional charge and mass transport. We use first-principles simulations to study mechanisms of formation, aggregation and diffusion of oxygen vacancies in SrCrO3-δ. We found that at low concentrations oxygen vacancies have a tendency to aggregate into one-dimensional (1D) structures oriented along a [110] direction. These VO clusters induce rearrangements of oxide ions and conversion of Cr-centered perovskite lattice octahedra into tetrahedra. In turn, aggregation of these 1D VO clusters enables formation of 2D vacancy aggregates parallel to the (111) plane of the cubic perovskite lattice. We provide a simple physical picture for the formation and growth of such low-dimensional VO-structures. Moreover, we found mechanisms of VO migration which enable a diffusion and expansion of the VO-structures with low activation energies. Our results elucidate the atomic-scale mechanisms of efficient and reversible reduction and oxidation process observed in this material. These mechanisms could be extended to other complex oxides and used in design of high performance electrolytes and cathodes.

  13. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    NASA Astrophysics Data System (ADS)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-07-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  14. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    NASA Astrophysics Data System (ADS)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-05-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  15. Toward High Performance Integrated Semiconductor Micro and Nano Lasers Enabled by Transparent Conducting Materials: from Thick Structure to Thin Film

    NASA Astrophysics Data System (ADS)

    Ou, Fang

    Integrated semiconductor lasers working at the wavelength around 1.3 microm and 1.55 microm are of great interest for the research of photonic integrated circuit (PIC) since they are the crucial components for optical communications and many other applications. To satisfy the requirement of the next generation optical communication and computing systems, integrated semiconductor lasers are expected to have high device performance like very low lasing threshold, high output powers, high speed and possibility of being integrated with electronics. This dissertation focuses on the design and realization of InP based high performance electrically pumped integrated semiconductor lasers. In the dissertation, we first design the tall structure based electrically pumped integrated micro-lasers. Those lasers are capable of giving >10 mW output power with a moderate low threshold current density (0.5--5 kA/cm 2). Besides, a new enhanced radiation loss based coupler design is demonstrated to realize single directional output for curvilinear cavities. Second, the thin film structure based integrated semiconductor laser designs are proposed. Both structures use the side conduction geometry to enable the electrical injection into the thin film laser cavity. The performance enhancement of the thin film structure based lasers is analyzed compared to the tall structure. Third, we investigate the TCO materials. CdO deposited by PLD and In 2O3 deposited by IAD are studied from aspects of their physical, optical and electrical properties. Those materials can give a wide range of tunability in their conductivity (1--5000 S/cm) and optical transparency (loss 200--5000 cm-1), which is of great interest in realizing novel nanophotonic devices. In addition, the electrical contact properties of those materials to InP are also studied. Experiment result shows that both CdO and In2O3 can achieve good ohmic contact to n-InP with contact resistance as low as 10-6O·cm 2. At last, we investigate

  16. Probing Electronic, Structural, and Charge Transfer Properties of Organic Semiconductor/Inorganic Oxide Interfaces Using Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Spalenka, Josef Wade

    Interfaces between organic semiconductors and inorganic oxides provide the functionality for devices including field-effect transistors (FETs) and organic photovoltaics. Organic FETs are sensitive to the physical structure and electronic properties of the few molecular layers of material at the interface between the semiconducting channel and the gate dielectric, and provide quantitative information such as the field-effect mobility of charge carriers and the concentration of trapped charge. In this thesis, FET interfaces between organic small-molecule semiconductors and SiO2, and donor/acceptor interfaces between organic small-molecules and the wide bandgap semiconductor ZnO are studied using electrical measurements of field-effect transistor devices. Monolayer-scale films of dihexyl sexithiophene are shown to have higher hole mobility than other monolayer organic semiconductors, and the origin of the high mobility is discussed. Studies of the crystal structure of the monolayer using X-ray structural probes and atomic force microscopy reveal the crystal structure is different in the monolayer regime compared to thicker films and bulk crystals. Progress and remaining challenges are discussed for in situ X-ray diffraction studies of the dynamic changes in the local crystal structure in organic monolayers due to charge carriers generated during the application of electric fields from the gate electrode in working FETs. Studies were conducted of light sensitive organic/inorganic interfaces that are modified with organic molecules grafted to the surface of ZnO nanoparticles and thin films. These interfaces are models for donor/acceptor interfaces in photovoltaics. The process of exciton dissociation at the donor/acceptor interface was sensitive to the insulating or semiconducting molecules grafted to the ZnO, and the photoinduced charge transfer process is measured by the threshold voltage shift of FETs during illumination. Charge transfer between light sensitive donor

  17. Translation symmetry breakdown in low-dimensional lattices of pentagonal rings.

    PubMed

    Avramov, Paul; Demin, Victor; Luo, Ming; Choi, Cheol Ho; Sorokin, Pavel B; Yakobson, Boris; Chernozatonskii, Leonid

    2015-11-19

    The mechanism of translation symmetry breakdown in newly proposed low-dimensional carbon pentagon-constituted nanostructures (e.g., pentagraphene) with multiple sp(2)/sp(3) sublattices was studied by GGA DFT, DFTB, and model potential approaches. It was found that finite nanoclusters suffer strong uniform unit cell bending followed by breaking of crystalline lattice linear translation invariance caused by structural mechanical stress. It was shown that 2D sp(2)/sp(3) nanostructures are correlated transition states between two symmetrically equivalent bent structures. At DFT level of theory the distortion energy of the flakes (7.5 × 10(-2) eV/atom) is much higher the energy of dynamical stabilization of graphene. Strong mechanical stress prevents stabilization of the nanoclusters on any type of supports by either van der Waals or covalent bonding and should lead to formation of pentatubes, nanorings, or nanofoams rather than infinite nanoribbons or nanosheets. Formation of two-layered pentagraphene structures leads to compensation of the stress and stabilization of flat finite pentaflakes. PMID:26582476

  18. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    NASA Astrophysics Data System (ADS)

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  19. Impedance analysis of Al{sub 2}O{sub 3}/H-terminated diamond metal-oxide-semiconductor structures

    SciTech Connect

    Liao, Meiyong; Liu, Jiangwei; Imura, Masataka; Koide, Yasuo; Sang, Liwen; Coathup, David; Li, Jiangling; Ye, Haitao

    2015-02-23

    Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al{sub 2}O{sub 3} is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

  20. Phase Separation and Development of a Scanning Time of Flight Microscope to Study Charge Transport in Structured Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Paul, Sanjoy; Tripathi, Suvagata; Singh, Gautam; Twieg, Robert; Kumar, Satyendra; Ellman, Brett

    2015-03-01

    A scanning time-of-flight microscope (STOFm) has been developed to study charge transport in liquid crystalline organic semiconductors (LCOSCs). The STOFm combines the well-known pulsed laser time-of-flight technique with simultaneous polarized light transmission measurements, both on length scales of ~ 10 μm. In parallel, we have fabricated devices via photopolymerization and phase separation of a monomer/LCOSC mixture. The resulting structure has the LCOSC confined to small regions separated by an insulating polymer. We will discuss fabrication of these systems, as well as their characterization using the STOFm. Finally, we will show results on position-dependent charge transport in various pure LCOSC samples.

  1. Structural and phase transformation of A{sup III}B{sup V}(100) semiconductor surface in interaction with selenium

    SciTech Connect

    Bezryadin, N. N.; Kotov, G. I. Kuzubov, S. V.

    2015-03-15

    Surfaces of GaAs(100), InAs(100), and GaP(100) substrates thermally treated in selenium vapor have been investigated by transmission electron microscopy and electron probe X-ray microanalysis. Some specific features and regularities of the formation of A{sub 3}{sup III}B{sub 4}{sup VI} (100)c(2 × 2) surface phases and thin layers of gallium or indium selenides A{sub 2}{sup III}B{sub 3}{sup VI} (100) on surfaces of different A{sup III}B{sup V}(100) semiconductors are discussed within the vacancy model of surface atomic structure.

  2. Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033¯8)

    NASA Astrophysics Data System (ADS)

    Yano, Hiroshi; Hirao, Taichi; Kimoto, Tsunenobu; Matsunami, Hiroyuki; Shiomi, Hiromu

    2002-12-01

    The interface properties of SiO2/4H-SiC(033¯8) were characterized using n-type metaloxide-semiconductor structures fabricated by wet oxidation. The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements at a low temperature and room temperature. 4H-SiC(033¯8) was found to have different energy distribution of the interface state density from the (0001) face. The shallow interface state density on (033¯8) is lower than on (0001) by a factor of 4 to 8.

  3. Synthesis and processing strategies to tune the film structure and optoelectronic properties of non-planar molecular semiconductors

    NASA Astrophysics Data System (ADS)

    Hiszpanski, Anna Maria

    Molecular semiconductors have generated significant interest for their potential use in lightweight and mechanically flexible electronic devices. Yet, predicting how new molecular semiconductors will perform in devices remains a challenge because devices are comprised of polycrystalline thin films of molecular semiconductors, and charge transport in these films depends greatly on the details of their microstructure whose heterogeneities can span multiple length scales. The microstructure typically evolves during deposition, and thus developing organic electronics not only hinges on the success of materials discovery, but also on the ability to fine-tune deposition and processing parameters to access the thin-film structure most conducive for charge transport. This thesis explores chemical modification of a non-planar organic semiconductor, contorted hexabenzocoronene, cHBC, to tune its optoelectronic properties and processing strategies to induce structural changes in thin films. We primarily explore fluorine- and chlorine-substitution at the peripheral aromatic rings of cHBC to lower its energy levels and optical bandgap, and we demonstrate such halogenated derivatives as electron acceptors in organic solar cells. Substitution with these larger atoms also increases cHBC's intramolecular steric hindrance, providing access to an alternative molecular conformation with an order of magnitude higher solubility and systematic shifts in absorption and emission characteristics. cHBC's non-planarity provides an added dimension of tunability as it frustrates crystallization during deposition, producing amorphous films that can be subsequently crystallized with post-deposition processing. Decoupling structural development from deposition allows us to fabricate transistors from differently treated cHBC films and elucidate the effects of changes in film structure on charge transport, as measured by the field-effect mobility. With different processing, the extent of c

  4. Energy resolved electrochemical impedance spectroscopy for electronic structure mapping in organic semiconductors

    SciTech Connect

    Nádaždy, V. Gmucová, K.; Schauer, F.

    2014-10-06

    We introduce an energy resolved electrochemical impedance spectroscopy method to map the electronic density of states (DOS) in organic semiconductor materials. The method consists in measurement of the charge transfer resistance of a semiconductor/electrolyte interface at a frequency where the redox reactions determine the real component of the impedance. The charge transfer resistance value provides direct information about the electronic DOS at the energy given by the electrochemical potential of the electrolyte, which can be adjusted using an external voltage. A simple theory for experimental data evaluation is proposed, along with an explanation of the corresponding experimental conditions. The method allows mapping over unprecedentedly wide energy and DOS ranges. Also, important DOS parameters can be determined directly from the raw experimental data without the lengthy analysis required in other techniques. The potential of the proposed method is illustrated by tracing weak bond defect states induced by ultraviolet treatment above the highest occupied molecular orbital in a prototypical σ-conjugated polymer, poly[methyl(phenyl)silylene]. The results agree well with those of our previous DOS reconstruction by post-transient space-charge-limited-current spectroscopy, which was, however, limited to a narrow energy range. In addition, good agreement of the DOS values measured on two common π-conjugated organic polymer semiconductors, polyphenylene vinylene and poly(3-hexylthiophene), with the rather rare previously published data demonstrate the accuracy of the proposed method.

  5. Inelastic Scattering in STEM for Studying Structural and Electronic Properties of Chalcogenide-Based Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gunawan, Aloysius Andhika

    Transmission electron microscopy (TEM) relies upon elastic and inelastic scattering signals to perform imaging and analysis of materials. TEM images typically contain contributions from both types of scattering. The ability to separate the contributions from elastic and inelastic processes individually through energy filter or electron energy loss spectroscopy (EELS) allows unique analysis that is otherwise unachievable. Two prominent types of inelastic scattering probed by EELS, namely plasmon and core-loss excitations, are useful for elucidating structural and electronic properties of chalcogenide-based semiconductor nanocrystals. The elastic scattering, however, is still a critical part of the analysis and used in conjunction with the separated inelastic scattering signals. The capability of TEM operated in scanning mode (STEM) to perform localized atomic length scale analysis also permits the understanding of the nanocrystals unattainable by other techniques. Despite the pivotal role of inelastic scatterings, their contributions for STEM imaging, particularly high-angle annular dark field STEM (HAADF-STEM), are not completely understood. This is not surprising since it is currently impossible to experimentally separate the inelastic signals contributing to HAADF-STEM images although images obtained under bright-field TEM mode can be analyzed separately from their scattering contributions using energy-filtering devices. In order to circumvent such problem, analysis based on simulation was done. The existing TEM image simulation algorithm called Multislice method, however, only accounts for elastic scattering. The existing Multislice algorithm was modified to incorporate (bulk or volume) plasmon inelastic scattering. The results were verified based on data from convergent-beam electron diffraction (CBED), electron energy loss spectroscopy (EELS), and HAADF-STEM imaging as well as comparison to experimental data. Dopant atoms are crucial factors which control

  6. Expressive body movement responses to music are coherent, consistent, and low dimensional.

    PubMed

    Amelynck, Denis; Maes, Pieter-Jan; Martens, Jean Pierre; Leman, Marc

    2014-12-01

    Embodied music cognition stresses the role of the human body as mediator for the encoding and decoding of musical expression. In this paper, we set up a low dimensional functional model that accounts for 70% of the variability in the expressive body movement responses to music. With the functional principal component analysis, we modeled individual body movements as a linear combination of a group average and a number of eigenfunctions. The group average and the eigenfunctions are common to all subjects and make up what we call the commonalities. An individual performance is then characterized by a set of scores (the individualities), one score per eigenfunction. The model is based on experimental data which finds high levels of coherence/consistency between participants when grouped according to musical education. This shows an ontogenetic effect. Participants without formal musical education focus on the torso for the expression of basic musical structure (tempo). Musically trained participants decode additional structural elements in the music and focus on body parts having more degrees of freedom (such as the hands). Our results confirm earlier studies that different body parts move differently along with the music. PMID:25415938

  7. A mixed basis density functional approach for low dimensional systems with B-splines

    NASA Astrophysics Data System (ADS)

    Ren, Chung-Yuan; Hsue, Chen-Shiung; Chang, Yia-Chung

    2015-03-01

    A mixed basis approach based on density functional theory is employed for low dimensional systems. The basis functions are taken to be plane waves for the periodic direction multiplied by B-spline polynomials in the non-periodic direction. B-splines have the following advantages: (1) the associated matrix elements are sparse, (2) B-splines possess a superior treatment of derivatives, (3) B-splines are not associated with atomic positions when the geometry structure is optimized, making the geometry optimization easy to implement. With this mixed basis set we can directly calculate the total energy of the system instead of using the conventional supercell model with a slab sandwiched between vacuum regions. A generalized Lanczos-Krylov iterative method is implemented for the diagonalization of the Hamiltonian matrix. To demonstrate the present approach, we apply it to study the C(001)-(2×1) surface with the norm-conserving pseudopotential, the n-type δ-doped graphene, and graphene nanoribbon with Vanderbilt's ultra-soft pseudopotentials. All the resulting electronic structures were found to be in good agreement with those obtained by the VASP code, but with a reduced number of basis.

  8. Epitaxial MoS2/GaN structures to enable vertical 2D/3D semiconductor heterostructure devices

    NASA Astrophysics Data System (ADS)

    Ruzmetov, D.; Zhang, K.; Stan, G.; Kalanyan, B.; Eichfeld, S.; Burke, R.; Shah, P.; O'Regan, T.; Crowne, F.; Birdwell, A. G.; Robinson, J.; Davydov, A.; Ivanov, T.

    MoS2/GaN structures are investigated as a building block for vertical 2D/3D semiconductor heterostructure devices that utilize a 3D substrate (GaN) as an active component of the semiconductor device without the need of mechanical transfer of the 2D layer. Our CVD-grown monolayer MoS2 has been shown to be epitaxially aligned to the GaN lattice which is a pre-requisite for high quality 2D/3D interfaces desired for efficient vertical transport and large area growth. The MoS2 coverage is nearly 50 % including isolated triangles and monolayer islands. The GaN template is a double-layer grown by MOCVD on sapphire and allows for measurement of transport perpendicular to the 2D layer. Photoluminescence, Raman, XPS, Kelvin force probe microscopy, and SEM analysis identified high quality monolayer MoS2. The MoS2/GaN structures electrically conduct in the out-of-plane direction and across the van der Waals gap, as measured with conducting AFM (CAFM). The CAFM current maps and I-V characteristics are analyzed to estimate the MoS2/GaN contact resistivity to be less than 4 Ω-cm2 and current spreading in the MoS2 monolayer to be approx. 1 μm in diameter. Epitaxial MoS2/GaN heterostructures present a promising platform for the design of energy-efficient, high-speed vertical devices incorporating 2D layered materials with 3D semiconductors.

  9. Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele

    2016-01-01

    We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k · p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0.53Ga0.47 As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III-V semiconductor band structure calculation methods and calibrated band parameters for device simulations.

  10. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  11. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

    NASA Astrophysics Data System (ADS)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2015-11-01

    We study the evolution of the structural and electronic properties of crystalline indium gallium zinc oxide (IGZO) upon amorphization by first-principles calculation. The bottom of the conduction band (BCB) is found to be constituted of a pseudo-band of molecular orbitals that resonate at the same energy on different atomic sites. They display a bonding character between the s orbitals of the metal sites and an anti-bonding character arising from the interaction between the oxygen and metal s orbitals. The energy level of the BCB shifts upon breaking of the crystal symmetry during the amorphization process, which may be attributed to the reduction of the coordination of the cationic centers. The top of the valence band (TVB) is constructed from anti-bonding oxygen p orbitals. In the amorphous state, they have random orientation, in contrast to the crystalline state. This results in the appearance of localized tail states in the forbidden gap above the TVB. Zinc is found to play a predominant role in the generation of these tail states, while gallium hinders their formation. Last, we study the dependence of the fundamental gap and effective mass of IGZO on mechanical strain. The variation of the gap under strain arises from the enhancement of the anti-bonding interaction in the BCB due to the modification of the length of the oxygen-metal bonds and/or to a variation of the cation coordination. This effect is less pronounced for the amorphous material compared to the crystalline material, making amorphous IGZO a semiconductor of choice for flexible electronics. Finally, the effective mass is found to increase upon strain, in contrast to regular materials. This counterintuitive variation is due to the reduction of the electrostatic shielding of the cationic centers by oxygen, leading to an increase of the overlaps between the metal orbitals at the origin of the delocalization of the BCB. For the range of strain typically met in flexible electronics, the induced

  12. Electronic structure and v alence of Mn imputiries in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Schulthess, T. C.; Temmerman, W.; Szotek, Z.; Stocks, G. M.; Butler, W. H.

    2004-03-01

    Substitutional Mn impurities in III-V semiconductors can acquire either a divalent or a trivalent configuration. For example, it is generally accepted that Mn in GaAs is in a (d^5+h) configuration with five occupied Mn d-orbitals and a delocalized hole in the valence band. In contrast, Mn in GaN is believed to be in a d^4 configuration with a deep impurity state that has d-character. But there have recently been some discussions about the possibility of having some Mn ion in GaN assuming a divalent (d^5+h) type configuration. In order to achieve carrier induced ferromagnetism, the desired state of the Mn ions in III-V semiconductors is the (d^5+h) configuration. We have therefore performed ab-initio calculations of the Mn valence when it substitutes Ga in various III-V semiconductor hosts. We use the self-interaction corrected local spin density (SIC-LSD) method which is able to treat localized impurity orbitals properly. In particular we find that the method is capable of predicting the (d^5+h) state of Mn in GaAs. For Mn in GaP and GaN the calculations predict a trivalent d^4 state in the idealized system. The energy differences between d^4 and (d^5+h) configurations in GaP are, however, very small. Introduction of defects or donors doe change the valence of Mn in GaP, favoring the divalent state under certain circumstances. Work supported by the Defense Advanced Research Project Agency and by the Division of Materials Science and Engineering, U.S. Department of Energy, under Contract DE-AC05-00OR22725 with UT-Battelle LLC.

  13. Electronic structure and charge injection at interface between electrode and liquid-crystalline semiconductor

    NASA Astrophysics Data System (ADS)

    Toda, Tohru; Hanna, Jun-ichi; Tani, Tadaaki

    2007-01-01

    The measurement and analysis of the current-voltage characteristics of a liquid-crystalline organic semiconductor 2-(4'-octyphenyl)-6-dodecyloxynaphthalene (8-PNP-O12) in contact with electrodes of Pt, Au, ITO, Cr, and Al (in the order of work function) have revealed that the injection of holes from the electrodes of Pt, Au, and indium tin oxide to 8-PNP-O12 takes place according to the Richardson-Schottky model and that an electric double layer is formed at the interface between each of these electrodes and 8-PNP-O12, making it difficult to inject holes from the former to the latter.

  14. Electronic Structure and Valence of Mn impurities in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Schulthess, Thomas C.

    2003-11-01

    Mn doped III-V semiconductors have recently become very popular materials since they are ferromagnetic at reasonably high temperatures and in some cases show carrier induced magnetism, where the Curie temperature can be altered by changes in the carrier concentration. It is expected that these materials will play an important role in Spintronics devices. Substitutional Mn impurities in III-V semiconductors can acquire either a divalent or a trivalent configuration. For example, it is generally accepted that Mn in GaAs is in a (d^5+h) configuration with five occupied Mn d-orbitals and a delocalized hole in the valence band. In contrast, Mn in GaN is believed to be in a d^4 configuration with a deep impurity state that has d-character. But there have recently been some discussions about the possibility of having some Mn ion in GaN assuming a divalent (d^5+h) type configuration. In order to achieve carrier induced ferromagnetism, the desired state of the Mn ions in III-V semiconductors is the (d^5+h) configuration. We have therefore performed ab-initio calculations of the Mn valence when it substitutes Ga in various III-V semiconductor hosts. We use the self-interaction corrected local spin density (SIC-LSD) method which is able to treat localized impurity orbitals properly. In particular we find that the method is capable of predicting the (d^5+h) state of Mn in GaAs. For Mn in GaP and GaN the calculations predict a trivalent d^4 state in the idealized system. The energy differences between d^4 and (d^5+h) configurations in GaP are, however, very small. Introduction of defects or donors does change the valence of Mn in GaP, favoring the divalent state under certain circumstances. Work done in collaboration with W. Temmerman and S. Szotek, Daresbury Laboratory, G. M. Stocks, ORNL, and W. H. Butler, MINT Center University of Alabama. This work supported by the Defense Advanced Research Agency and by DOE Office of Science trough ASCR/MICS and BES/DMSE under Contract No

  15. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOEpatents

    Seager, Carleton H.; Evans, Jr., Joseph Tate

    1998-01-01

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  16. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOEpatents

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  17. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect

    Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M.; Mika, A.; Sęk, G.; Misiewicz, J.

    2014-02-24

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  18. Nontrivial ferrimagnetism on the low-dimensional quantum spin systems with frustration

    NASA Astrophysics Data System (ADS)

    Shimokawa, Tokuro; Nakano, Hiroki; Sakai, Toru

    2013-03-01

    In low-dimensional quantum spin systems with frustration, nontrivial magnetisms often occur due to strong quantum fluctuation. Ferrimagnetism in non-frustrated systems is well-known to occur from the mechanism based on the Marshall-Lieb-Mattis theorem. This type of ferrimagnetism is called ``Lieb-Mattis (LM) type.'' Recently, the occurrence of nontrivial ferrimagnetism has been reported in some one-dimensional Heisenberg spin systems with frustration, in which the continuous change of spontaneous magnetization and the incommensurate modulation in local magnetization are observed. This type is called ``non-Lieb-Mattis (NLM) type.'' In this study, we tackle a problem whether the NLM ferrimagnetism occurs or not in higher dimensional systems. We investigate the S =1/2 Heisenberg models on the spatially anisotropic two-dimensional (2D) kagome lattice and on the quasi-one-dimensional (Q1D) kagome strip lattices by the numerical diagonalization and density matrix renormalization group methods. The Q1D models share the same structure in their inner part with the spatially anisotropic 2D kagome lattice; we examine two cases with respect to strip width. We will discuss the relationship between the ground-state properties of the Q1D lattices and those of the 2D lattice.

  19. Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Su, Y. K.; Liaw, U. H.

    1994-10-01

    Silicon dioxide (SiO2) insulator layers on indium antimonide (InSb) have been prepared by direct phtochemical-vapor deposition at low temperature below 200 C using 2537 A UV light. Ellipsometric studies prove that the refractive index and deposition rate of the photo-oxide films depend on the substrate temperature and gas ratio. The films evaluated by Auger electron spectroscopy (AES) depth profile showed that composition atoms were distributed uniformly throughout the oxide film. The AES analysis found the dominant components of the oxide film are silicon and oxygen. Fourier transform infrared spectroscopy absorption shows that the grown film has strong Si-O bonds with few Si-H bonds. The chemical x-ray photoelectron spectroscopy depth profile shows that the constituents of the semiconductors' outdiffusion into the oxide are few. Metal-oxide-semiconductor (MOS) capacitors were constructed on InSb substrates. Capacitance voltage (C-V) characteristics of the MOS capacitors were measured at 77 K. The interface-state density is of the order of 10(exp 11)/sq cm/eV, and distributed in a very good U shape within the midgap. C-V curves showed almost no hysteresis and smaller flatband voltage. The current-voltage curve shows the leakage current is about 1 nA at 0.8 V, and the breakdown voltage is about 0.8 MV/cm.

  20. Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Su, Y. K.; Liaw, U. H.

    1994-10-01

    Silicon dioxide (SiO2) insulator layers on indium antimonide (InSb) have been prepared by direct photochemical-vapor deposition at low temperature below 200 °C using 2537 Å UV light. Ellipsometric studies prove that the refractive index and deposition rate of the photo-oxide films depend on the substrate temperature and gas ratio. The films evaluated by Auger electron spectroscopy (AES) depth profile showed that composition atoms were distributed uniformly throughout the oxide film. The AES analysis found the dominant components of the oxide film are silicon and oxygen. Fourier transform infrared spectroscopy absorption shows that the grown film has strong Si—O bonds with few Si—H bonds. The chemical x-ray photoelectron spectroscopy depth profile shows that the constituents of the semiconductors' outdiffusion into the oxide are few. Metal-oxide-semiconductor (MOS) capacitors were constructed on InSb substrates. Capacitance voltage (C-V) characteristics of the MOS capacitors were measured at 77 K. The interface-state density is of the order of 1011 cm-2 eV-1, and distributed in a very good U shape within the midgap. C-V curves showed almost no hysteresis and smaller flatband voltage. The current-voltage curve shows the leakage current is about 1 nA at 0.8 V, and the breakdown voltage is about 0.8 MV/cm.

  1. Structural analysis of the microporous semiconductor K-SBC-1 during its reversible sorption of water

    SciTech Connect

    Shulman, Alexander; Langer, Vratislav; Palmqvist, Anders E.C.

    2009-08-15

    The reversible sorption of water molecules in the crystalline microporous semiconductor K-SBC-1 was investigated using temperature-resolved single-crystal XRD analysis. Three crystallographic sites of adsorbed water molecules, differing in adsorption strength, were discovered in the pores of K-SBC-1. The least tightly bound is located at the centre of the {l_brace}Sb{sub 12}O{sub 18}{r_brace} tube and begins to desorb around 50 deg. C. Above 200 deg. C the more strongly bound water molecules rearrange from their potassium-coordinating positions to the centre of the tube, thus obtaining the characteristics of the loosely bound water, and desorb thereafter. At 240 deg. C approximately 10% of the water has desorbed, leaving the host framework of K-SBC-1 intact. Upon re-adsorption of water at room temperature the molecules preferentially adsorb at sites in the centre of the {l_brace}Sb{sub 12}O{sub 18}{r_brace} tube. This shows that a heat treatment of 240-300 deg. C activates K-SBC-1 for sorption and explains the observed facile desorption of water from activated samples. - Graphical abstract: Three crystallographic adsorption sites for water are found in the crystalline microporous semiconductor K-SBC-1. Upon heating to 240 deg. C the material desorbs enough strongly bound water to become activated for reversible sorption at room temperature, due to redistribution of water occupancy between the strong and weak adsorption sites.

  2. Reflection of Transverse Waves in a Structure "Dielectric-Piezoelectric Semiconductor with Current"

    NASA Astrophysics Data System (ADS)

    Lyamshev, L. M.; Shevyakhov, N. S.

    2000-05-01

    Reflection of a plane monochromatic transverse wave by the boundary of the acoustic contact of a dielectric with a hexagonal piezoelectric semiconductor in the presence of a longitudinal charge drift is treated in the small-signal approximation within the framework of the hydrodynamic description of a charge carrier plasma. A procedure of selecting the branches with allowance for the conversion of the quasi-acoustic mode (a refracted transverse wave) into plasma-acoustic disturbances, both in-leaking at the boundary or out-leaking from it, is proposed for the determination of the solution under the conditions of a supersonic drift and “overcritical” angles of incidence. Beyond the restrictions of White’s theory of ultrasonic wave propagation in piezoelectric semiconductors, it is demonstrated that this technique removes the defects of the solutions obtained earlier in the form of discontinuities in angular dependences of the modulus of the reflection coefficient of a transverse wave in the vicinity of the “critical” angle of incidence and leads to a solution that does not contain a resonance singularity of a polar type.

  3. Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices

    NASA Astrophysics Data System (ADS)

    Xu, Kaikai; Zhang, Zhengyuan; Zhang, Zhengping

    2016-01-01

    A silicon p-channel metal oxide semiconductor field-effect transistor (Si-PMOSFET) that is fully compatible with the standard complementary metal oxide semiconductor process is investigated based on the phenomenon of optical radiation observed in the reverse-biased p-n junction in the Si-PMOSFET device. The device can be used either as a two-terminal silicon diode light-emitting device (Si-diode LED) or as a three-terminal silicon gate-controlled diode light-emitting device (Si gate-controlled diode LED). It is seen that the three-terminal operating mode could provide much higher power transfer efficiency than the two-terminal operating mode. A new solution based on the concept of a theoretical quantum efficiency model combined with calculated results is proposed for interpreting the evidence of light intensity reduction at high operating voltages. The Si-LED that can be easily integrated into CMOS fabrication process is an important step toward optical interconnects.

  4. Heat capacity and sound velocities of low dimensional Fermi gases

    NASA Astrophysics Data System (ADS)

    Salas, P.; Solis, M. A.

    2014-03-01

    We report the heat capacity ratio and sound velocities for an interactionless Fermi gas immersed in periodic structures such as penetrable multilayers or multitubes created by one (planes) or two perpendicular (tubes) external Dirac comb potentials. The isobaric specific heat of the fermion gas presents the dimensional crossover previously observed in the isochoric specific heat - from 3D to 2D or to 1D -. The quotient between the two quantities has a prominent bump related to the confinement, and as the temperature increases, it goes towards the monoatomic classical gas value 5/3. We present the isothermal and the adiabatic sound velocities of the fermion gas which show anomalous behavior at temperatures below TF due to the dimensionality of the system, while at higher temperatures again we recover the behavior of a classical Fermi gas. Furthermore, as the temperature goes to zero the sound velocity has a finite value, as expected.

  5. Few-photon transport in low-dimensional systems

    SciTech Connect

    Longo, Paolo; Schmitteckert, Peter; Busch, Kurt

    2011-06-15

    We analyze the role of quantum interference effects induced by an embedded two-level system on the photon transport properties in waveguiding structures that exhibit cutoffs (band edges) in their dispersion relation. In particular, we demonstrate that these systems invariably exhibit single-particle photon-atom bound states and strong effective nonlinear responses on the few-photon level. Based on this, we find that the properties of these photon-atom bound states may be tuned via the underlying dispersion relation and that their occupation can be controlled via multiparticle scattering processes. This opens an interesting route for controlling photon transport properties in a number of solid-state-based quantum optical systems and the realization of corresponding functional elements and devices.

  6. Atomic and electronic structures evolution of the narrow band gap semiconductor Ag2Se under high pressure.

    PubMed

    Naumov, P; Barkalov, O; Mirhosseini, H; Felser, C; Medvedev, S A

    2016-09-28

    Non-trivial electronic properties of silver telluride and other chalcogenides, such as the presence of a topological insulator state, electronic topological transitions, metallization, and the possible emergence of superconductivity under pressure have attracted attention in recent years. In this work, we studied the electronic properties of silver selenide (Ag2Se). We performed direct current electrical resistivity measurements, in situ Raman spectroscopy, and synchrotron x-ray diffraction accompanied by ab initio calculations to explore pressure-induced changes to the atomic and electronic structure of Ag2Se. The temperature dependence of the electrical resistivity was measured up to 30 GPa in the 4-300 K temperature interval. Resistivity data showed an unusual increase in the thermal energy gap of phase I, which is a semiconductor under ambient conditions. Recently, a similar effect was reported for the 3D topological insulator Bi2Se3. Raman spectroscopy studies revealed lattice instability in phase I indicated by the softening of observed vibrational modes with pressure. Our hybrid functional band structure calculations predicted that phase I of Ag2Se would be a narrow band gap semiconductor, in accordance with experimental results. At a pressure of ~7.5 GPa, Ag2Se underwent a structural transition to phase II with an orthorhombic Pnma structure. The temperature dependence of the resistivity of Ag2Se phase II demonstrated its metallic character. Ag2Se phase III, which is stable above 16.5 GPa, is also metallic according to the resistivity data. No indication of the superconducting transition is found above 4 K in the studied pressure range. PMID:27439023

  7. Atomic and electronic structures evolution of the narrow band gap semiconductor Ag2Se under high pressure

    NASA Astrophysics Data System (ADS)

    Naumov, P.; Barkalov, O.; Mirhosseini, H.; Felser, C.; Medvedev, S. A.

    2016-09-01

    Non-trivial electronic properties of silver telluride and other chalcogenides, such as the presence of a topological insulator state, electronic topological transitions, metallization, and the possible emergence of superconductivity under pressure have attracted attention in recent years. In this work, we studied the electronic properties of silver selenide (Ag2Se). We performed direct current electrical resistivity measurements, in situ Raman spectroscopy, and synchrotron x-ray diffraction accompanied by ab initio calculations to explore pressure-induced changes to the atomic and electronic structure of Ag2Se. The temperature dependence of the electrical resistivity was measured up to 30 GPa in the 4–300 K temperature interval. Resistivity data showed an unusual increase in the thermal energy gap of phase I, which is a semiconductor under ambient conditions. Recently, a similar effect was reported for the 3D topological insulator Bi2Se3. Raman spectroscopy studies revealed lattice instability in phase I indicated by the softening of observed vibrational modes with pressure. Our hybrid functional band structure calculations predicted that phase I of Ag2Se would be a narrow band gap semiconductor, in accordance with experimental results. At a pressure of ~7.5 GPa, Ag2Se underwent a structural transition to phase II with an orthorhombic Pnma structure. The temperature dependence of the resistivity of Ag2Se phase II demonstrated its metallic character. Ag2Se phase III, which is stable above 16.5 GPa, is also metallic according to the resistivity data. No indication of the superconducting transition is found above 4 K in the studied pressure range.

  8. Collective charge excitation in low dimensional organic salts

    NASA Astrophysics Data System (ADS)

    Naka, Makoto; Ishihara, Sumio

    2013-03-01

    Electronic ferroelectricity is known as phenomena where electric polarization is attributed to the charge order without inversion symmetry. This is seen in some transition metal oxides, e.g. LuFe2O4, and charge transfer salts. Quasi 2-dimesional organic salt kappa-(ET)2Cu2(CN)3\\ is one of the electronic ferroelectricities. Two ET molecules construct a dimer and are arranged on a triangular lattice. Recently, it is reported that a dielectric anomaly is experimentally observed around 30K. An origin of this dielectric anomaly is thought to be an ?electronic? dipole generated by a localized hole in one side of the ET molecules in dimers. Motivated by the experimental results, we study charge dynamics in dimer-Mott insulating system with internal charge degree of freedom in a dimer. We adopt the three kinds of models, extended Hubbard model, V-t model and its effective pseudo-spin model. We analyze these models by utilizing the exact diagonalization method and spin wave approximation, and focus on the collective charge excitation. In the ground state, paraelectric dimer-Mott phase and ferroelectric charge ordered phase compete with each other. We find the low-energy intra-dimer charge excitations which show a strong light polarization dependence. The collective excitation mode which is observable by light being parallel to the electric polarization shows a softening and a remarkable frequency dispersion around the phase boundary. This collective charge excitation of the ?electronic? dipole explains the recently observed peak structure in optical conductivity for the THz region.

  9. First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN Semiconductors

    SciTech Connect

    Schulthess, Thomas C; Temmerman, Walter M; Szotek, Zdzislawa; Svane, Axel; Petit, Leon

    2007-01-01

    We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.

  10. Inference and Decoding of Motor Cortex Low-Dimensional Dynamics via Latent State-Space Models.

    PubMed

    Aghagolzadeh, Mehdi; Truccolo, Wilson

    2016-02-01

    Motor cortex neuronal ensemble spiking activity exhibits strong low-dimensional collective dynamics (i.e., coordinated modes of activity) during behavior. Here, we demonstrate that these low-dimensional dynamics, revealed by unsupervised latent state-space models, can provide as accurate or better reconstruction of movement kinematics as direct decoding from the entire recorded ensemble. Ensembles of single neurons were recorded with triple microelectrode arrays (MEAs) implanted in ventral and dorsal premotor (PMv, PMd) and primary motor (M1) cortices while nonhuman primates performed 3-D reach-to-grasp actions. Low-dimensional dynamics were estimated via various types of latent state-space models including, for example, Poisson linear dynamic system (PLDS) models. Decoding from low-dimensional dynamics was implemented via point process and Kalman filters coupled in series. We also examined decoding based on a predictive subsampling of the recorded population. In this case, a supervised greedy procedure selected neuronal subsets that optimized decoding performance. When comparing decoding based on predictive subsampling and latent state-space models, the size of the neuronal subset was set to the same number of latent state dimensions. Overall, our findings suggest that information about naturalistic reach kinematics present in the recorded population is preserved in the inferred low-dimensional motor cortex dynamics. Furthermore, decoding based on unsupervised PLDS models may also outperform previous approaches based on direct decoding from the recorded population or on predictive subsampling. PMID:26336135

  11. Multianalyte biosensor based on pH-sensitive ZnO electrolyte-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Haur Kao, Chyuan; Chen, Hsiang; Ling Lee, Ming; Chun Liu, Che; Ueng, Herng-Yih; Cheng Chu, Yu; Jie Chen, Yu; Ming Chang, Kow

    2014-05-01

    Multianalyte electrolyte-insulator-semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na+, K+, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed for use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.

  12. Multianalyte biosensor based on pH-sensitive ZnO electrolyte–insulator–semiconductor structures

    SciTech Connect

    Haur Kao, Chyuan; Chun Liu, Che; Ueng, Herng-Yih; Chen, Hsiang Cheng Chu, Yu; Jie Chen, Yu; Ling Lee, Ming; Ming Chang, Kow

    2014-05-14

    Multianalyte electrolyte–insulator–semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na{sup +}, K{sup +}, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed for use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.

  13. Simulations of terahertz pulse emission from thin-film semiconductor structures

    NASA Astrophysics Data System (ADS)

    Semichaevsky, Andrey

    The photo-Dember effect is the formation of transient electric dipoles due to the interaction of semiconductors with ultrashort optical pulses. Typically the optically-induced dipole moments vary on the ns- or ps- scales, leading to the emission of electromagnetic pulses with terahertz (THz) bandwidths. One of the applications of the photo-Dember effect is a photoconductive dipole antenna (PDA). This work presents a computational model of a PDA based on Maxwell's equations coupled to the Boltzmann transport equation. The latter is solved semiclassically for the doped GaAs using a continuum approach. The emphasis is on the accurate prediction of the emitted THz pulse shape and bandwidth, particularly when materials are doped with a rare-earth metal such as erbium or terbium that serve as carrier recombination centers. Field-dependent carrier mobility is determined from particle-based simulations. Some of the previous experimental results are used as a basis for comparison with our model.

  14. 3D mapping of nanoscale electric potentials in semiconductor structures using electron-holographic tomography

    NASA Astrophysics Data System (ADS)

    Wolf, Daniel; Lubk, Axel; Prete, Paola; Lovergine, Nico; Lichte, Hannes

    2016-09-01

    Off-axis electron holography (EH) is a powerful method for mapping projected electric potentials, such as built-in potentials in semiconductor devices, in two dimensions (2D) at nanometer resolution. However, not well-defined thickness profiles, surface effects, and composition changes of the sample under investigation complicate the interpretation of the projected potentials. Here, we demonstrate how these problems can be overcome by combining EH with tomographic techniques, that is, electron holographic tomography (EHT), reconstructing electric potentials in 3D. We present EHT reconstructions of an n-type MOSFET including its dopant-related built-in potentials inside the device, as well as of a GaAs/AlGaAs core-multishell nanowire containing a 5 nm thick quantum well tube.

  15. Superresolution Structure Optical Disk with Semiconductor-Doped Glass Mask Layer Containing CdSe Nanoparticles

    NASA Astrophysics Data System (ADS)

    Yeh, Tung‑Ti; Wang, Jr‑Hau; Hsieh, Tsung‑Eong; Shieh, Han‑Ping D.

    2006-02-01

    In this work, we demonstrate a distinct superresolution phenomenon and signal properties of an optical disk with a semiconductor-doped glass (SDG) mask layer containing CdSe nanoparticles. It was found that the 69 nm marks could be consistently retrieved at reading power (Pr) = 4 mW with carrier-to-noise ratio (CNR) = 13.56 dB. The signals were clearly resolved with CNRs nearly equal to 40 dB at Pr=4 mW when the recorded marks were larger than 100 nm. The cyclability test indicated that the CdSe-SiO2 SDG layer might serve as a stable and reliable optical mask layer in 105 readout cycles.

  16. Understanding the Electronic Structure of Metal/SAM/Organic−Semiconductor Heterojunctions

    PubMed Central

    2009-01-01

    Computational modeling is used to describe the mechanisms governing energy level alignment between an organic semiconductor (OSC) and a metal covered by various self-assembled monolayers (SAMs). In particular, we address the question to what extent and under what circumstances SAM-induced work-function modifications lead to an actual change of the barriers for electron and hole injection from the metal into the OSC layer. Depending on the nature of the SAM, we observe clear transitions between Fermi level pinning and vacuum-level alignment regimes. Surprisingly, although in most cases the pinning occurs only when the metal is present, it is not related to charge transfer between the electrode and the organic layer. Instead, charge rearrangements at the interface between the SAM and the OSC are observed, accompanied by a polarization of the SAM. PMID:19891441

  17. Quenched disorder forbids discontinuous transitions in nonequilibrium low-dimensional systems.

    PubMed

    Villa Martín, Paula; Bonachela, Juan A; Muñoz, Miguel A

    2014-01-01

    Quenched disorder affects significantly the behavior of phase transitions. The Imry-Ma-Aizenman-Wehr-Berker argument prohibits first-order or discontinuous transitions and their concomitant phase coexistence in low-dimensional equilibrium systems in the presence of random fields. Instead, discontinuous transitions become rounded or even continuous once disorder is introduced. Here we show that phase coexistence and first-order phase transitions are also precluded in nonequilibrium low-dimensional systems with quenched disorder: discontinuous transitions in two-dimensional systems with absorbing states become continuous in the presence of quenched disorder. We also study the universal features of this disorder-induced criticality and find them to be compatible with the universality class of the directed percolation with quenched disorder. Thus, we conclude that first-order transitions do not exist in low-dimensional disordered systems, not even in genuinely nonequilibrium systems with absorbing states. PMID:24580210

  18. Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Bi-Juan, Chen; Zheng, Deng; Xian-Cheng, Wang; Shao-Min, Feng; Zhen, Yuan; Si-Jia, Zhang; Qing-Qing, Liu; Chang-Qing, Jin

    2016-07-01

    The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor. Project supported by the National Natural Science Foundation of China and Project of Ministry of Science and Technology of China.

  19. Effects of Low-k Stack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure

    NASA Astrophysics Data System (ADS)

    Tagami, Masayoshi; Inoue, Naoya; Ueki, Makoto; Narihiro, Mitsuru; Tada, Munehiro; Yamamoto, Hironori; Ito, Fuminori; Furutake, Naoya; Saito, Shinobu; Onodera, Takahiro; Takeuchi, Tsuneo; Hayashi, Yoshihiro

    2012-09-01

    Low capacitance and highly reliable Cu dual-damascene (DD) interconnects have been developed with self-organized “seamless low-k SiOCH stacks” (SEALS) structure. A carbon-rich sub-nano porous SiOCH (k=2.5) was directly stacked on an oxygen-rich porous SiOCH (k=2.7) in the SEALS structure, without a hard-mask (HM) and etch-stop (ES) layer of SiO2. The effective k-value (keff) of the Cu DD interconnect including the SiCN capping layer (k=4.9) was reduced to 2.9 compared to 3.4 on a conventional hybrid structure with SiO2-HM and ES, which had been used in 65-nm-node mass production. The interconnect delay of a 45-nm-node complementary metal oxide semiconductor (CMOS) ring oscillator (RO) was reduced by 15% referring to that of the conventional hybrid structure. Interconnect reliabilities, such as the interline time dependent dielectric breakdown (TDDB) and thermal cycles, were unchanged from those of the conventional hybrid interconnects. No failure was detected for chip package interaction (CPI) during reliability tests in a plastic ball grid array (PBGA) package. SEALS is a promising structure for scaled down ultra large scale integrations (ULSIs) for highly reliable and high speed operation, and low power consumption.

  20. Structure of the interface between ErAs, a cubic semimetal and AlAs, a tetrahedral semiconductor

    SciTech Connect

    Tarnow, E.

    1995-06-15

    Using {ital ab} {ital initio} local density calculations, the atomic structure of the (100) interface between ErAs, a semimetal with the sodium-chloride (SC) structure and AlAs, a semiconductor with the zinc-blende (ZB) structure is investigated. Several findings emerge: (1) Eight different high symmetry SC/ZB interfaces are identified and classified. (2) Several low energy interfaces, and combinations thereof, are found for epitaxial growth and for small superlattices. The energies of these interfaces change during epitaxy pointing to importance of kinetics. Calculated structural energies and Er {l_angle}100{r_angle} placements are compared with experimental Rutherford backscattering measurements. (3) The AlAs ZB structure buckles the first ErAs SC layer. There is a strong correlation between the amount of buckling induced in a substrate SC layer and the energy required to add another SC layer. (4) For small superlattices a complete ZB or SC arrangement, removing the SC/ZB interfaces altogether, is sometimes energetically preferred. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  1. Low-Dimensional Polyoxometalate Molecules/Tantalum Oxide Hybrids for Non-Volatile Capacitive Memories.

    PubMed

    Balliou, Angelika; Papadimitropoulos, Giorgos; Skoulatakis, George; Kennou, Stella; Davazoglou, Dimitrios; Gardelis, Spiros; Glezos, Nikos

    2016-03-23

    Transition-metal-oxide hybrids composed of high surface-to-volume ratio Ta2O5 matrices and a molecular analogue of transition metal oxides, tungsten polyoxometalates ([PW12O40](3-)), are introduced herein as a charge storage medium in molecular nonvolatile capacitive memory cells. The polyoxometalate molecules are electrostatically self-assembled on a low-dimensional Ta2O5 matrix, functionalized with an aminosilane molecule with primary amines as the anchoring moiety. The charge trapping sites are located onto the metal framework of the electron-accepting molecular entities as well as on the molecule/oxide interfaces which can immobilize negatively charged mobile oxygen vacancies. The memory characteristics of this novel nanocomposite were tested using no blocking oxide for extraction of structure-specific characteristics. The film was formed on top of the 3.1 nm-thick SiO2/n-Si(001) substrates and has been found to serve as both SiO2/Si interface states' reducer (i.e., quality enhancer) and electron storage medium. The device with the polyoxometalates sandwiched between two Ta2O5 films results in enhanced internal scattering of carriers. Thanks to this, it exhibits a significantly larger memory window than the one containing the plain hybrid and comparable retention time, resulting in a memory window of 4.0 V for the write state and a retention time around 10(4) s without blocking medium. Differential distance of molecular trapping centers from the cell's gate and electronic coupling to the space charge region of the underlying Si substrate were identified as critical parameters for enhanced electron trapping for the first time in such devices. Implementing a numerical electrostatic model incorporating structural and electronic characteristics of the molecular nodes derived from scanning probe and spectroscopic characterization, we are able to interpret the hybrid's electrical response and gain some insight into the electrostatics of the trapping medium. PMID

  2. Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

    SciTech Connect

    Novikov, A. V. Yablonskiy, A. N.; Platonov, V. V.; Obolenskiy, S. V.; Lobanov, D. N.; Krasilnik, Z. F.

    2010-03-15

    This study is concerned with the effect of irradiation on the luminescence properties of low-dimensional Si/Ge heterostructures with different degrees of spatial localization of charge carriers. It is shown that the radiation stability of Si/Ge heterostructures is improved with increasing efficiency of localization of charge carriers in the structures. The spatial localization of charge carriers in the SiGe nanostructures decreases the probability of nonradiative recombination of charge carriers at radiation defects produced in the Si matrix. It is demonstrated that, among the structures explored in the study, the highest radiation stability of luminescence properties is inherent in the multilayered structures containing self-assembled Ge(Si) nanoislands, in which the most efficient spatial localization of charge carriers is attained. In this case, the localization is three- and two-dimensional, correspondingly, for holes in the islands and for electrons in the Si layers that separate neighboring layers containing the islands.

  3. The interface effect on the band offset of semiconductor nanocrystals with type-I core-shell structure.

    PubMed

    Zhu, Ziming; Ouyang, Gang; Yang, Guowei

    2013-04-21

    In order to pursue the interface effect on the band offset of the semiconductor nanocrystals with the type-I core-shell structure, we have established a theoretical model to elucidate the underlying mechanism based on the atomic-bond-relaxation consideration and continuum mechanics. It was found that the size-dependent interface bond-nature-factor of the core-shell nanocrystals can be deduced on the basis of the proposed model. Taking the typical CdSe-ZnSe nanostructure as an example, we showed that the theoretical results were consistent with the experimental observations. These investigations provided a useful guide in opening up the possibility to engineer nanodevices with special optoelectronic properties. PMID:23474697

  4. Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2003-11-25

    A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

  5. Photoelectric energy conversion of plasmon-generated hot carriers in metal-insulator-semiconductor structures.

    PubMed

    García de Arquer, F Pelayo; Mihi, Agustín; Kufer, Dominik; Konstantatos, Gerasimos

    2013-04-23

    Plasmonic excitation in metals has received great attention for light localization and control of light-matter interactions at the nanoscale with a plethora of applications in absorption enhancement, surface-enhanced Raman scattering, or biosensing. Electrically active plasmonic devices, which had remained underexplored, have recently become a growing field of interest. In this report we introduce a metal-insulator-semiconductor heterostructure for plasmo-electric energy conversion, a novel architecture to harvest hot-electrons derived from plasmonic excitations. We demonstrate external quantum efficiency (EQE) of 4% at 460 nm using a Ag nanostructured electrode and EQE of 1.3% at 550 nm employing a Au nanostructured electrode. The insulator interfacial layer has been found to play a crucial role in interface passivation, a requisite in photovoltaic applications to achieving both high open-circuit voltages (0.5 V) and fill-factors (0.5), but its introduction simultaneously modifies hot-electron injection and transport. We investigate the influence passivation has on these processes for different material configurations, and characterize different types of transport depending on the initial plasmon energy band, reporting power conversion efficiencies of 0.03% for nanopatterned silver electrodes. PMID:23495769

  6. Structural modification of semiconductor optical amplifiers for wavelength division multiplexing systems

    NASA Astrophysics Data System (ADS)

    Singh, Surinder

    2011-01-01

    In this paper, the semiconductor optical amplifier is analyzed for in-line and pre-amplifier for wavelength division multiplexing (WDM) transmission having minimum crosstalk and power penalty with sufficient gain. It is evaluated that the cross gain saturation of the SOA can be reduced by settling crosstalk at lower level and also minimizing the power penalty by slight increase in the confinement factor. At an optimal confinement factor of 0.41069, high amplification is obtained up to saturation power of 20.804 mW. For this confinement factor, low crosstalk of -9.63 dB and amplified spontaneous emission noise power of 119.4 μW are obtained for -15 dBm input signal. It has been demonstrated for the first time that twenty channels at 10 Gb/s WDM can transmit up to 5600 km by use of this optimization. In this, cascading of in-line SOA is done at the span of 70 km for return zero differential phase shift keying modulation format with the channel spacing of 100 GHz. The optical power spectrum and clear eye are observed at the transmission distance of 4340 and 5600 km in RZ-DPSK system. The bit error rate for all channels increases more than 10 -10 with the increase in launched input power.

  7. 2-Aminopyrimidine-silver(I) based organic semiconductors: Electronic structure and optical response

    NASA Astrophysics Data System (ADS)

    Riefer, A.; Rauls, E.; Schmidt, W. G.; Eberhard, J.; Stoll, I.; Mattay, J.

    2012-04-01

    Calculations based on (occupation constrained) density functional theory using local as well as hybrid functionals to describe the electron-electron exchange and correlation are combined with many-body perturbation theory in order to determine and rationalize the electronic and optical excitation properties of 2-aminopyrimidine-silver(I) based organic semiconductors and their parent molecules. Large quasiparticle shifts and exciton binding energies of about 4 eV are found in the aminopyrimidine molecules. Both the quasiparticle blueshift and the excitonic redshift are reduced upon crystal formation. They cancel each other partially and thus allow for a meaningful description of the molecular and crystal optical response within the independent-particle approximation. We find a surprisingly strong influence of local-field effects as well as resonant-nonresonant coupling terms in the electron-hole Hamiltonian on the optical properties. The calculations reproduce well measured data and allow for identifying chemical trends with respect to the organic building blocks of the crystals.

  8. Simulation of plasma based semiconductor processing using block structured locally refined grids

    SciTech Connect

    Wake, D.D.

    1998-01-01

    We have described a new numerical method for plasma simulation. Calculations have been presented which show that the method is accurate and suggest the regimes in which the method provides savings in CPU time and memory requirements. A steady state simulation of a four centimeter domain was modeled with sheath scale (150 microns) resolution using only 40 grid points. Simulations of semiconductor processing equipment have been performed which imply the usefulness of the method for engineering applications. It is the author`s opinion that these accomplishments represent a significant contribution to plasma simulation and the efficient numerical solution of certain systems of non-linear partial differential equations. More work needs to be done, however, for the algorithm to be of practical use in an engineering environment. Despite our success at avoiding the dielectric relaxation timestep restrictions the algorithm is still conditionally stable and requires timesteps which are relatively small. This represents a prohibitive runtime for steady state solutions on high resolution grids. Current research suggests that these limitations may be overcome and the use of much larger timesteps will be possible.

  9. Structural disorder and magnetism in the spin-gapless semiconductor CoFeCrAl

    NASA Astrophysics Data System (ADS)

    Choudhary, Renu; Kharel, Parashu; Valloppilly, Shah R.; Jin, Yunlong; O'Connell, Andrew; Huh, Yung; Gilbert, Simeon; Kashyap, Arti; Sellmyer, D. J.; Skomski, Ralph

    2016-05-01

    Disordered CoFeCrAl and CoFeCrSi0.5Al0.5 alloys have been investigated experimentally and by first-principle calculations. The melt-spun and annealed samples all exhibit Heusler-type superlattice peaks, but the peak intensities indicate a substantial degree of B2-type chemical disorder. Si substitution reduces the degree of this disorder. Our theoretical analysis also considers several types of antisite disorder (Fe-Co, Fe-Cr, Co-Cr) in Y-ordered CoFeCrAl and partial substitution of Si for Al. The substitution transforms the spin-gapless semiconductor CoFeCrAl into a half-metallic ferrimagnet and increases the half-metallic band gap by 0.12 eV. Compared CoFeCrAl, the moment of CoFeCrSi0.5Al0.5 is predicted to increase from 2.01 μB to 2.50 μB per formula unit, in good agreement with experiment.

  10. Strain effect on electronic properties of low-dimensional γ-graphyne: first principles study

    NASA Astrophysics Data System (ADS)

    Lee, Hyeonsu; Kang, Seoung-Hun; Park, Sora; Lee, Chang-Sun; Kwon, Young-Kyun

    2014-03-01

    Using first-principles calculations, we study the interplay between structural and electronic properties of γ-graphyne nanotubes (γGNTs) consisting of hexagonal carbon rings and acetylenic linkages. We first identify the equilibrium structures of various γGNTs classified in terms of chirality: (n , 0) denotes an armchair-type tube, whereas (n , n) does a zigzag-type, in contrast with CNTs. Then their Young's moduli are calcuated to be a few hundreds in GPa, which are smaller than those of CNTs. We verify that all γGNTs are intrinsic semicondutors with energy gap (<= 1 . 22 eV) decreasing with tube diameter. It is, however, found that axial strain can significantly modifies the electronic structures of semiconducting γGNTs. Very intriguingly, even semiconductor-metal transition occurs under compressive strain: all armchair γGNTs, exept for (3,0) γGNT with small diameter, become metallic, while only some types of zigzag γGNTs metallic under compression. To explain the origin of such electronic structure modifications, we examine the effect of structural change on the band structures of two-dimensional γ-graphyne sheet under strains and match them with the band structure of γGNTs using the zone-folding scheme.

  11. Low dimensional homeochaos in coevolving host-parasitoid dimorphic populations: Extinction thresholds under local noise

    NASA Astrophysics Data System (ADS)

    Sardanyés, Josep

    2011-10-01

    A discrete time model describing the population dynamics of coevolution between host and parasitoid haploid populations with a dimorphic matching allele coupling is investigated under both determinism and stochastic population disturbances. The role of the properties of the attractors governing the survival of both populations is analyzed considering equal mutation rates and focusing on host and parasitoid growth rates involving chaos. The purely deterministic model reveals a wide range of ordered and chaotic Red Queen dynamics causing cyclic and aperiodic fluctuations of haplotypes within each species. A Ruelle-Takens-Newhouse route to chaos is identified by increasing both host and parasitoid growth rates. From the bifurcation diagram structure and from numerical stability analysis, two different types of chaotic sets are roughly differentiated according to their size in phase space and to their largest Lyapunov exponent: the Confined and Expanded attractors. Under the presence of local population noise, these two types of attractors have a crucial role in the survival of both coevolving populations. The chaotic confined attractors, which have a low largest positive Lyapunov exponent, are shown to involve a very low extinction probability under the influence of local population noise. On the contrary, the expanded chaotic sets (with a higher largest positive Lyapunov exponent) involve higher host and parasitoid extinction probabilities under the presence of noise. The asynchronies between haplotypes in the chaotic regime combined with low dimensional homeochaos tied to the confined attractors is suggested to reinforce the long-term persistence of these coevolving populations under the influence of stochastic disturbances. These ideas are also discussed in the framework of spatially-distributed host-parasitoid populations.

  12. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  13. Development of a scanning time of flight microscope and its application to the study of charge transport in phase separated structured organic semiconductors

    NASA Astrophysics Data System (ADS)

    Paul, Sanjoy; Ellman, Brett; Tripathi, Suvagata; Singh, Gautam; Twieg, Robert J.

    2016-04-01

    We describe a tool for studying the two-dimensional spatial variation in electronic properties of organic semiconductors: the scanning time-of-flight microscope (STOFm). The STOFm simultaneously measures the transmittance of polarized light and time-of-flight current transients with a pixel size <30 μm, making it especially valuable for studies of the correlations of structure with charge generation and transport in liquid crystalline organic semiconductors (LC OSCs). Adapting a previously developed photopolymerization technique, we characterize the instrument using patterned samples of a LC OSC bounded by a non-semiconducting polymer matrix.

  14. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  15. Synchrotron Studies of Quantum Emergence in Non-Low Dimensional Materials Final Report

    SciTech Connect

    James W. Allen

    2011-08-26

    This document is the final report of research performed under U.S. DOE Award Number DE-FG02-07ER46379, entitled Synchrotron Studies of Quantum Emergence in Non-Low Dimensional Materials. It covers the full period of the award, from June 1, 2007 through May 31, 2011.

  16. Thermal transport in low-dimensional systems: the case of Graphene and single layer Boron Nitride

    NASA Astrophysics Data System (ADS)

    Pereira, Luiz Felipe; Donadio, Davide

    2013-03-01

    Low-dimensional systems present unusual transport properties in comparison to bulk materials. In contrast with the three-dimensional case, in one- and two-dimensions heat transport models predict a divergence of the thermal conductivity with system size. In reality, in a low-dimensional system the mean-free-path of heat carriers (phonons) becomes comparable to the micrometer size of experimental samples. Recent developments in nanostructure fabrication allow a direct comparison between theory and experiments for such low-dimensional systems. We perform extensive molecular dynamics simulations of heat transport in graphene and single layer BN, in order to clarify the behavior of the thermal conductivity in realistic low-dimensional systems. In particular, we address the influence of system size on the simulation results. Equilibrium molecular dynamics predicts a convergence of the thermal conductivity with system size, even for systems with less than one hundred nanometers and thousands of atoms. Meanwhile, large scale non-equilibrium molecular dynamics shows a divergence of the thermal conductivity with system size up to the micrometer scale. We analyse the discrepancy between methods in terms of perturbations in phonon populations induced by the non-equilibrium regime.

  17. Pyrene-conjugated hyaluronan facilitated exfoliation and stabilisation of low dimensional nanomaterials in water.

    PubMed

    Zhang, Fei; Chen, Xianjue; Boulos, Ramiz A; Yasin, Faizah Md; Lu, Haibo; Raston, Colin; Zhang, Hongbin

    2013-05-25

    Pyrene-conjugated hyaluronan (Py-HA) facilitates the exfoliation of low-dimensional nanomaterials including graphite, hexagonal boron nitride (h-BN) and molybdenum disulfide (MoS2), and the dispersion of carbon nanotubes (CNTs) and carbon nano-onions (CNOs) in water (and PBS solutions), with the assistance of sonication. PMID:23598776

  18. Bismuth-induced surface structure and morphology in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Duzik, Adam J.

    2015-04-01

    Bi is the largest group V element and has a number of advantages in III-V semiconductor properties, such as bandgap reduction, spin-orbit coupling, a preserved electron mobility over III-V-N materials, and nearly ideal surfactant properties resulting in a surface smoothing effect on GaAs. However, the mechanism for this behavior is not well understood. Insight on the mechanism is obtained through study of the Bi-terminated GaAs surface morphology and atomic reconstructions produced via molecular beam epitaxy (MBE). Experimental scanning tunneling microscopy (STM) characterization of the Bi/GaAs surface reveal disordered (1x3), (2x3), and (4x3) reconstructions, often sharing the same reflective high-energy electron diffraction (RHEED) patterns. Roughness on the micron length scale decreases as the step widen, attributed to the concurrent increase of opposite direction step edges on the nanometer length scale. Corresponding cluster expansion, density functional theory (DFT), and Monte Carlo simulations all point to the stability of the disordered (4x3) reconstruction at finite temperature as observed in experimental STM. The effects of incorporated Bi are determined through epitaxial GaSbBi growth on GaSb with various Ga:Sb:Bi flux ratios. Biphasic surface droplets are observed with sub-droplets, facets, and substrate etching. Despite the rough growth front, X-ray diffraction (XRD) and Rutherford backscatter (RBS) measurements show significant Bi incorporation of up to 12% into GaSb, along with a concurrent increase of background As concentration. This is attributed to a strain auto-compensation effect. Bi incorporation of up to 10% is observed for the highest Bi fluxes while maintaining low surface droplet density.

  19. Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

    PubMed

    Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

    2016-01-01

    One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. PMID:26799035

  20. Impact of graphene–graphite films on electrical properties of Al2O3 metal–insulator–semiconductor structure

    NASA Astrophysics Data System (ADS)

    Choi, Kyeong-Keun; Kee, Jong; Park, Chan-Gyung; Kim, Deok-kee

    2016-08-01

    The diffusion barrier property of directly grown graphene–graphite films between Al2O3 films and Si substrates was evaluated using metal–insulator–semiconductor (MIS) structures. The roughness, morphology, sheet resistance, Raman spectrum, chemical composition, and breakdown field strength of the films were investigated after rapid thermal annealing. About 2.5-nm-thick graphene–graphite films effectively blocked the formation of the interfacial layer between Al2O3 films and Si, which was confirmed by the decreased breakdown field strength of graphene–graphite film structures. After annealing at 975 °C for 90 s, the increase in the mean breakdown field strength of the structure with the ∼2.5-nm-thick graphene–graphite film was about 91% (from 8.7 to 16.6 MV/cm), while that without the graphene–graphite film was about 187% (from 11.2 to 32.1 MV/cm). Si atom diffusion into Al2O3 films was reduced by applying the carbon-based diffusion barrier.

  1. Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit

    NASA Astrophysics Data System (ADS)

    Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

    2016-01-01

    One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ˜3 nm . Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

  2. Magnetic, structural and optical properties of Mn-based and Cr-based diluted magnetic semiconductors and alloys

    NASA Astrophysics Data System (ADS)

    Alsaad, A.

    2009-03-01

    We have implemented supercell approach by using local spin density functional theory for Mn-doped GaN, Mn-doped ScN and the linear muffin-tin orbital method to predict the structural and magnetic properties of these novel diluted magnetic semiconductors and their GaxMn1-xN and ScxMn1-xN alloys. The global energy minimum of MnN is obtained for zinc-blende structure. If the compound is compressed by 6 % the energy minimum corresponds to the NaCl structure in disagreement with the experimentally observed a slightly tetragonally distorted rocksalt structure, known as ? phase. The rocksalt structure of CrN at about 8 % lattice expansion becomes stable in the ferromagnetic (FM) state and has a global minimum energy at a lattice constant of 3.9 å. We have observed an isostructural phase transition for ScxMn1-xN alloys from zince-blende phase to hexagonal phase that occurs at a hydrostatic pressure of 17.5 GPa. Moreover, the structural and optical properties of single crystal CrN/ScN superlattices and Cr1-xScxN alloys are studied in details. We report an isostructural phase transition from wurtzite (w-CrN) to hexagonal (h-ScN) at a hydrostatic pressure of 21 GPa. We have also used first-principles methods to study the electronic, optical and magnetic properties of MnN and MnAs compounds in the hypothetical cubic zinc-blende phase, a phase in which the two MnN and MnAs binaries have the same local environment as that they have in GaMnN and GaMnAs alloys. We show that MnN exhibits antiferromagnetic (AFM) ground state and MnAs adopts ferromagnetic (FM) ground state.

  3. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  4. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  5. Two-body physics in quasi-low-dimensional atomic gases under spin-orbit coupling

    NASA Astrophysics Data System (ADS)

    Wang, Jing-Kun; Yi, Wei; Zhang, Wei

    2016-06-01

    One of the most dynamic directions in ultracold atomic gas research is the study of low-dimensional physics in quasi-low-dimensional geometries, where atoms are confined in strongly anisotropic traps. Recently, interest has significantly intensified with the realization of synthetic spin-orbit coupling (SOC). As a first step toward understanding the SOC effect in quasi-low-dimensional systems, the solution of two-body problems in different trapping geometries and different types of SOC has attracted great attention in the past few years. In this review, we discuss both the scattering-state and the bound-state solutions of two-body problems in quasi-one and quasi-two dimensions. We show that the degrees of freedom in tightly confined dimensions, in particular with the presence of SOC, may significantly affect system properties. Specifically, in a quasi-one-dimensional atomic gas, a one-dimensional SOC can shift the positions of confinement-induced resonances whereas, in quasitwo- dimensional gases, a Rashba-type SOC tends to increase the two-body binding energy, such that more excited states in the tightly confined direction are occupied and the system is driven further away from a purely two-dimensional gas. The effects of the excited states can be incorporated by adopting an effective low-dimensional Hamiltonian having the form of a two-channel model. With the bare parameters fixed by two-body solutions, this effective Hamiltonian leads to qualitatively different many-body properties compared to a purely low-dimensional model.

  6. Semiconductor processing

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.

  7. Pressure, temperature and plasma frequency effects on the band structure of a 1D semiconductor photonic crystal

    NASA Astrophysics Data System (ADS)

    González, Luz E.; Porras-Montenegro, N.

    2012-01-01

    In this work using the transfer-matrix formalism we study pressure, temperature and plasma frequency effects on the band structure of a 1D semiconductor photonic crystal made of alternating layers of air and GaAs. We have found that the temperature dependence of the photonic band structure is negligible, however, its noticeable changes are due mainly to the variations of the width and the dielectric constant of the layers of GaAs, caused by the applied hydrostatic pressure. On the other hand, by using the Drude's model, we have studied the effects of the hydrostatic pressure by means of the variation of the effective mass and density of the carriers in n-doped GaAs, finding firstly that increasing the amount of n-dopants in GaAs, namely, increasing the plasma frequency, the photonic band structure is shifted to regions of higher frequencies, and secondly the appearance of two regimes of the photonic band structure: one above the plasma frequency with the presence of usual Bragg gaps, and the other, below this frequency, where there are no gaps regularly distributed, with their width diminishing with the increasing of the plasma frequency as well as with the appearance of more bands, but leaving a wide frequency range in the lowest part of the spectrum without accessible photon states. Also, we have found characteristic frequencies in which the dielectric constant equals for different applied pressures, and from which to higher or lower values the photonic band structure inverts its behavior, depending on the value of the applied hydrostatic pressure. We hope this work may be taken into account for the development of new perspectives in the design of new optical devices.

  8. Metal{endash}insulator{endash}semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer

    SciTech Connect

    Park, D.; Mohammad, S.N.; Chen, Z.; Morkoc, H.

    1997-03-01

    We report on a novel GaAs metal{endash}insulator{endash}semiconductor (MIS) structure exhibiting the interface state densities in the 9.2{times}10{sup 10} eV{sup {minus}1}cm{sup {minus}2} with a Si (10 {Angstrom})/GaP (12 {Angstrom}) layer on GaAs. The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 70 mV under a field swing of about {plus_minus}1.4 MV/cm. {ital Ex situ} solid phase annealing around 500{endash}550{degree}C in N{sub 2} using rapid thermal annealing was high enough to recrystallize the as-deposited Si interlayer at low temperature ({approximately}300{degree}C). The 100 kHz frequency response at 77 K suggests that the interface pinning levels are close to the conduction band edge of GaAs. This article reports the first application of a pseudomorphic Si/GaP interlayer to ideal GaAs MIS diodes and exhibits a favorable interface stability with high temperature annealing. {copyright} {ital 1997 American Vacuum Society.}

  9. Local structure of amorphous GaN{sub 1-x}As{sub x} semiconductor alloys across the composition range

    SciTech Connect

    Levander, A. X.; Dubon, O. D.; Wu, J.; Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W.; Novikov, S. V.; Foxon, C. T.

    2013-06-28

    Typically only dilute (up to {approx}10%) highly mismatched alloys can be grown due to the large differences in atomic size and electronegativity of the host and the alloying elements. We have overcome the miscibility gap of the GaN{sub 1-x}As{sub x} system using low temperature molecular beam epitaxy. In the intermediate composition range (0.10 < x < 0.75), the resulting alloys are amorphous. To gain a better understanding of the amorphous structure, the local environment of the As and Ga atoms was investigated using extended x-ray absorption fine structure (EXAFS). The EXAFS analysis shows a high concentration of dangling bonds compared to the crystalline binary endpoint compounds of the alloy system. The disorder parameter was larger for amorphous films compared to crystalline references, but comparable with other amorphous semiconductors. By examining the Ga local environment, the dangling bond density and disorder associated with As-related and N-related bonds could be decoupled. The N-related bonds had a lower dangling bond density and lower disorder.

  10. A novel RF-insensitive EED utilizing an integrated metal-oxide-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Baginski, Thomas A.; Baginski, Michael E.

    1990-05-01

    The description and characterization of an electroexplosive device (EED) are presented. The structure is designed, using microelectric fabrication techniques, to be inherently immune to radio frequency (RF) radiation and also offers protection against stray signals associated with RF-induced arcing. A detailed discussion of the structure, which includes the fundamental mechanisms of operation, fabrication techniques, the device's frequency response and sensitivity to RF-induced arcing, and its compatibility with present fire control systems, is provided. Preliminary test results of the prototype device are discussed and show a significant improvement in the system's overall EMI immunity. These results include bench and field measurements of the structure's RF response for frequencies of 10-225 MHz and field measurements of the device's sensitivity to RF-induced arcing. The measurements indicate a significant reduction in real power dissipated by an EED employing the structure over an EED employing a conventional bridgewire (20 dB at 90 MHz).

  11. Nonlinear optical response of semiconductor-nanocrystals-embedded photonic band gap structure

    SciTech Connect

    Liao, Chen; Zhang, Huichao; Tang, Luping; Zhou, Zhiqiang; Lv, Changgui; Cui, Yiping; Zhang, Jiayu

    2014-04-28

    Colloidal CdSe/ZnS core/shell nanocrystals (NCs), which were dispersed in SiO{sub 2} sol, were utilized to fabricate a SiO{sub 2}:NCs/TiO{sub 2} all-dielectric photonic band gap (PBG) structure. The third-order nonlinear refractive index (n{sub 2}) of the PBG structure was nearly triple of that of the SiO{sub 2}:NCs film due to the local field enhancement in the PBG structure. The photoinduced change in refractive index (Δn) could shift the PBG band edge, so the PBG structure would show significant transmission modification, whose transmission change was ∼17 folds of that of the SiO{sub 2}:NCs film. Under excitation of a 30 GW/cm{sup 2} femtosecond laser beam, a transmission decrease of 80% was realized.

  12. Ab-initio study of magnetism behavior in TiO2 semiconductor with structural defects

    NASA Astrophysics Data System (ADS)

    Zarhri, Z.; Houmad, M.; Ziat, Y.; El Rhazouani, O.; Slassi, A.; Benyoussef, A.; El Kenz, A.

    2016-05-01

    Magnetic, electronic and structural properties of titanium dioxide material with different structural defects are studied using the first-principles ab-initio calculations and the Korringa-Kohn-Rostoker method (KKR) combined with the coherent potential approximation (CPA) method in connection with the local density approximation (LDA). We investigated all structural defects in rutile TiO2 such as Titanium interstitial (Tii), Titanium anti-sites (Tio), Titanium vacancies (VTi), Oxygen interstitial (Oi), Oxygen anti-sites (OTi) and oxygen vacancies (Vo). Mechanisms of hybridization and interaction between magnetic atoms are investigated. The transition temperature is computed using the Mean Field Approximation (MFA).Magnetic stability energy of ferromagnetic and disordered local moment states is calculated to determine the most stable state. Titanium anti-sites have a half-metallic aspect. We also studied the change type caused by structural defects in this material.

  13. Experimental investigation of a shielded complementary Metal-Oxide Semiconductor (MOS) structure

    NASA Technical Reports Server (NTRS)

    Lin, H. C.; Halsor, J. L.

    1974-01-01

    A shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area.

  14. Low-dimensional multiplexing: the magneto-optical Kerr effect in an individual FeCoCu nanowire

    NASA Astrophysics Data System (ADS)

    Torres-Torres, C.

    2016-01-01

    Due to their selective and fascinating effects, metallic nanoparticles have become a very significant topic for science. A modification in morphology and structure of low-dimensional materials can result in extraordinary ultrafast physical phenomena. New findings related to electronic, optical and magnetic processes have emerged from surface plasmon resonance excitations in nanoparticles. Moreover, multi-functional systems can be obtained from the integration of different elements in a nanostructured configuration. Recently, Palmero et al (2015 Nanotechnology 26 461001) have reported magneto-optical Kerr effect explorations in individual FeCuCo nanowires; the influence of tailored morphologies exhibited by particular samples was analyzed. An important magnetization reversal action was revealed and it was concluded that the demagnetization may be responsible for vortex domain wall propagation. The report can provide a solid base for future research and immediate applications in modern spintronics or magnetic data storage can be contemplated.

  15. Low-dimensional hyperthin FeS2 nanostructures for efficient and stable hydrogen evolution electrocatalysis

    SciTech Connect

    Jasion, Daniel; Qiao, Qiao; Barforoush, Joseph M.; Zhu, Yimei; Ren, Shenqiang; Leonard, Kevin C.

    2015-10-05

    We report a scalable, solution-processing method for synthesizing low-dimensional hyperthin FeS2 nanostructures, and we show that 2D FeS2 disc nanostructures are an efficient and stable hydrogen evolution electrocatalyst. By changing the Fe:S ratio in the precursor solution, we were able to preferentially synthesize either 1D wire or 2D disc nanostructures. The 2D FeS2 disc structure has the highest electrocatalytic activity for the hydrogen evolution reaction, comparable to platinum in neutral pH conditions. Moreover, the ability of the FeS2 nanostructures to generate hydrogen was confirmed by scanning electrochemical microscopy, and the 2D disc nanostructures were able to generate hydrogen for over 125 h.

  16. Electronic band structures of Ge1-xSnx semiconductors: A first-principles density functional theory study

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Hsien; Liu, Po-Liang; Hong, Yung-An; Chou, Yen-Ting; Hong, Jia-Yang; Siao, Yu-Jin

    2013-02-01

    We conduct first-principles total-energy density functional calculations to study the band structures in Ge1-xSnx infrared semiconductor alloys. The norm-conserving optimized pseudopotentials of Ge and Sn have been constructed for electronic structure calculations. The composition-bandgap relationships in Ge1-xSnx lattices are evaluated by a detailed comparison of structural models and their electronic band structures. The critical Sn composition related to the transition from indirect- to direct-gap in Ge1-xSnx alloys is estimated to be as low as x ˜ 0.016 determined from the parametric fit. Our results show that the crossover Sn concentration occurs at a lower critical Sn concentration than the values predicted from the absorption measurements. However, early results indicate that the reliability of the critical Sn concentration from such measurements is hard to establish, since the indirect gap absorption is much weaker than the direct gap absorption. We find that the direct band gap decreases exponentially with the Sn composition over the range 0 0.375, in very good agreement with the theoretical observed behavior [D. W. Jenkins and J. D. Dow, Phys. Rev. B 36, 7994, 1987]. For homonuclear and heteronuclear complexes of Ge1-xSnx alloys, the indirect band gap at L-pointis is found to decrease homonuclear Ge-Ge bonds or increase homonuclear Sn-Sn bonds as a result of the reduced L valley. All findings agree with previously reported experimental and theoretical results. The analysis suggests that the top of valence band exhibits the localization of bond charge and the bottom of the conduction band is composed of the Ge 4s4p and/or Sn 5s5p atomic orbits.

  17. Measuring and Predicting the Internal Structure of Semiconductor Nanocrystals through Raman Spectroscopy.

    PubMed

    Mukherjee, Prabuddha; Lim, Sung Jun; Wrobel, Tomasz P; Bhargava, Rohit; Smith, Andrew M

    2016-08-31

    Nanocrystals composed of mixed chemical domains have diverse properties that are driving their integration in next-generation electronics, light sources, and biosensors. However, the precise spatial distribution of elements within these particles is difficult to measure and control, yet profoundly impacts their quality and performance. Here we synthesized a unique series of 42 different quantum dot nanocrystals, composed of two chemical domains (CdS:CdSe), arranged in 7 alloy and (core)shell structural classes. Chemometric analyses of far-field Raman spectra accurately classified their internal structures from their vibrational signatures. These classifications provide direct insight into the elemental arrangement of the alloy as well as an independent prediction of fluorescence quantum yield. This nondestructive, rapid approach can be broadly applied to greatly enhance our capacity to measure, predict and monitor multicomponent nanomaterials for precise tuning of their structures and properties. PMID:27472011

  18. Examination of the local structure in composite and lowdimensional semiconductor by X-ray Absorption Spectroscopy

    SciTech Connect

    Lawniczak-Jablonska, K.; Demchenko, I.N.; Piskorska, E.; Wolska,A.; Talik, E.; Zakharov, D.N.; Liliental-Weber, Z.

    2006-09-25

    X-ray absorption methods have been successfully used to obtain quantitative information about local atomic composition of two different materials. X-ray Absorption Near Edge Structure analysis and X-Ray Photoelectron Spectroscopy allowed us to determine seven chemical compounds and their concentrations in c-BN composite. Use of Extended X-ray Absorption Fine Structure in combination with Transmission Electron Microscopy enabled us to determine the composition and size of buried Ge quantum dots. It was found that the quantum dots consisted out of pure Ge core covered by 1-2 monolayers of a layer rich in Si.

  19. Structural and electronic properties of GaAs and GaP semiconductors

    SciTech Connect

    Rani, Anita; Kumar, Ranjan

    2015-05-15

    The Structural and Electronic properties of Zinc Blende phase of GaAs and GaP compounds are studied using self consistent SIESTA-code, pseudopotentials and Density Functional Theory (DFT) in Local Density Approximation (LDA). The Lattice Constant, Equillibrium Volume, Cohesive Energy per pair, Compressibility and Band Gap are calculated. The band gaps calcultated with DFT using LDA is smaller than the experimental values. The P-V data fitted to third order Birch Murnaghan equation of state provide the Bulk Modulus and its pressure derivatives. Our Structural and Electronic properties estimations are in agreement with available experimental and theoretical data.

  20. Evaluation of semiconductor specimens by X-ray analysis. [considering germanium and gallium arsenide structures

    NASA Technical Reports Server (NTRS)

    Walter, H. U.

    1975-01-01

    Germanium and GaAs crystals were investigated for studies on photovoltaic effects, chemical etching and epitaxial growth according to the overall objective to assess the defect structure of single crystalline materials. A brief survey of basic theory and topographical techniques is provided; examples of topographs are presented.

  1. Structural and thermal properties of ternary narrow-gap oxide semiconductor; wurtzite-derived β-CuGaO2.

    PubMed

    Nagatani, Hiraku; Suzuki, Issei; Kita, Masao; Tanaka, Masahiko; Katsuya, Yoshio; Sakata, Osami; Miyoshi, Shogo; Yamaguchi, Shu; Omata, Takahisa

    2015-02-16

    The crystal structure of the wurtzite-derived β-CuGaO2 was refined by Rietveld analysis of high-resolution powder diffraction data obtained from synchrotron X-ray radiation. Its structural characteristics are discussed in comparison with the other I-III-VI2 and II-VI oxide semiconductors. The cation and oxygen tetrahedral distortions of the β-CuGaO2 from an ideal wurtzite structure are small. The direct band-gap nature of the β-CuGaO2, unlike β-Ag(Ga,Al)O2, was explained by small cation and oxygen tetrahedral distortions. In terms of the thermal stability, the β-CuGaO2 irreversibly transforms into delafossite α-CuGaO2 at >460 °C in an Ar atmosphere. The transformation enthalpy was approximately -32 kJ mol(-1), from differential scanning calorimetry. This value is close to the transformation enthalpy of CoO from the metastable zincblende form to the stable rock-salt form. The monovalent copper in β-CuGaO2 was oxidized to divalent copper in an oxygen atmosphere and transformed into a mixture of CuGa2O4 spinel and CuO at temperatures >350 °C. These thermal properties indicate that β-CuGaO2 is stable at ≤300 °C in both reducing and oxidizing atmospheres while in its metastable form. Consequently, this material could be of use in optoelectronic devices that do not exceed 300 °C. PMID:25651414

  2. Low dimensional model of heart rhythm dynamics as a tool for diagnosing the anaerobic threshold

    SciTech Connect

    Anosov, O.L.; Butkovskii, O.Y.; Kadtke, J.; Kravtsov, Y.A.

    1997-05-01

    We report preliminary results on describing the dependence of the heart rhythm variability on the stress level by using qualitative, low dimensional models. The reconstruction of macroscopic heart models yielding cardio cycles (RR-intervals) duration was based on actual clinical data. Our results show that the coefficients of the low dimensional models are sensitive to metabolic changes. In particular, at the transition between aerobic and aerobic-anaerobic metabolism, there are pronounced extrema in the functional dependence of the coefficients on the stress level. This strong sensitivity can be used to design an easy indirect method for determining the anaerobic threshold. This method could replace costly and invasive traditional methods such as gas analysis and blood tests. {copyright} {ital 1997 American Institute of Physics.}

  3. Low-dimensionality and predictability of solar wind and global magnetosphere during magnetic storms

    NASA Astrophysics Data System (ADS)

    Živković, T.; Rypdal, K.

    2011-10-01

    The storm index SYM-H, the solar wind velocity v, and interplanetary magnetic field Bz show no signatures of low-dimensional dynamics in quiet periods, but tests for determinism in the time series indicate that SYM-H exhibits a significant low-dimensional component during storm time, suggesting that self-organization takes place during magnetic storms. Even though our analysis yields no discernible change in determinism during magnetic storms for the solar wind parameters, there are significant enhancement of the predictability and exponents measuring persistence. Thus, magnetic storms are typically preceded by an increase in the persistence of the solar wind dynamics, and this increase is also present in the magnetospheric response to the solar wind.

  4. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    NASA Astrophysics Data System (ADS)

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid

    2015-08-01

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm2/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  5. Symmetry breaking in semiconductor nanocrystals via kinetic-controlled surface diffusion: a strategy for manipulating the junction structure.

    PubMed

    Wang, Xixi; Liu, Maochang; Chen, Yubin; Fu, Wenlong; Wang, Bin; Guo, Liejin

    2016-09-21

    The synthesis of semiconductor nanocrystals is usually limited to high-level symmetry, as constrained by the inherent, for example, face-centered cubic or hexagonal close-packed lattices of the crystals. Herein, we report a robust approach for breaking the symmetry of the CdS lattice and obtaining high-quality CdS ultrathin monopods, bipods, tripods, and tetrapods. The success relies on manipulating reaction kinetics by dropwise addition of a precursor solution, which permits deterministic control over the number of CdS monomers in the reaction solution. With rapid monomer supply by fast precursor injection, growth was restricted to only one {111} facet of the nascent CdS tetrahedron to produce an asymmetric ultrathin monopod (a zinc-blende tip with a wurtzite arm). Otherwise, growth monomers could access adjacent {111} facets through surface diffusion and thus lead to the switch of the growth pattern from asymmetric to symmetric to generate an ultrathin multipod (a zinc-blende tip/core with multi-wurtzite arms). These symmetry-controlled photocatalysts were characterized by a fine-tuned zinc blende-wurtzite intergrowth type-II homojunction. After evaluating their structure-dependent solar-hydrogen-production properties, the CdS ultrathin monopod with an appropriate length for controllable charge transportation showed the highest photocatalytic activity. PMID:27539367

  6. Metal-Semiconductor Transition Concomitant with a Structural Transformation in Tetrahedrite Cu12Sb4S13

    NASA Astrophysics Data System (ADS)

    Tanaka, Hiromi I.; Suekuni, Koichiro; Umeo, Kazunori; Nagasaki, Toshiki; Sato, Hitoshi; Kutluk, Galif; Nishibori, Eiji; Kasai, Hidetaka; Takabatake, Toshiro

    2016-01-01

    The tetrahedrite Cu12Sb4S13 undergoes a metal-semiconductor transition (MST) at TMST = 85 K, whose mechanism remains elusive. Our Cu 2p X-ray photoemission spectroscopy study revealed the monovalent state of Cu ions occupying the two sites in this compound. This fact excludes the possibilities of previously proposed antiferromagnetic order and Jahn-Teller instability inherent in a divalent Cu system. A synchrotron X-ray diffraction study has revealed that the body-centered cubic cell of Cu12Sb4S13 transforms into a body-centered 2a × 2a × 2c tetragonal supercell below TMST, where the cell volume per formula unit expands by 0.25%. We have further studied pressure effects on the MST as well as the effects of the substitution of As for Sb. The application of pressure above 1 GPa completely inhibits the MST and leads to a metallic state, suggesting that the low-temperature structure with a larger volume becomes unstable under pressure. The As substitution also reduces the volume and suppresses the MST but the full substitution induces another transition at 124 K.

  7. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    SciTech Connect

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  8. Mid-infrared Excitation of Plasmonic Resonances in Highly Anisotropic Layered Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Hoffman, A. J.; Alekseyev, L.; Sivco, D. L.; Narimanov, E. E.; Gmachl, C.

    2007-04-01

    We fabricate degenerately doped quantum well superlattices and highly doped n+-i-n+ heterostructures and examine their optical anisotropy. We demonstrate that the n+-i-n+ metamaterial has sufficient anisotropy to exhibit negative refraction over a wide range of incident angles and wavelengths. Further, we show that the interval of high anisotropy, and thus negative refraction, can be controlled through the doping density in the structures.

  9. Device applications and structural and optical properties of Indigo - A biodegradable, low-cost organic semiconductor

    NASA Astrophysics Data System (ADS)

    Wang, Zhengjun; Pisane, Kelly L.; Sierros, Konstantinos; Seehra, Mohindar S.; Korakakis, Dimitris

    2015-03-01

    Currently, memory devices based on organic materials are attracting great attention due to their simplicity in device structure, mechanical flexibility, potential for scalability, low-cost potential, low-power operation, and large capacity for data storage. In a recent paper from our group, Indigo-based nonvolatile organic write-once-read-many-times (WORM) memory device, consisting of a 100nm layer of indigo sandwiched between an indium tin oxide (ITO) cathode and an Al anode, has been reported. This device is found to be at its low resistance state (ON state) and can be switched to high resistance state (OFF state) by applying a positive bias with ON/OFF current ratio of the device being up to 1.02 × e6. A summary of these results along with the structural and optical properties of indigo powder will be reported. Analysis of x-ray diffraction shows a monoclinic structure with lattice parameters a(b)[c] = 0.924(0.577)[0.1222]nm and β =117° . Optical absorption shows a band edge at 1.70 eV with peak of absorption occurring at 1.90 eV. These results will be interpreted in terms of the HOMO-LUMO bands of Indigo.

  10. Effect of p–d hybridization, structural distortion and cation electronegativity on electronic properties of ZnSnX{sub 2} (X=P, As, Sb) chalcopyrite semiconductors

    SciTech Connect

    Mishra, S.; Ganguli, B.

    2013-04-15

    Significant effects of p–d hybridization, structural distortion and cation-electro-negativity are found on band gap in ZnSnX{sub 2} (X=P, As, Sb). Our study suggests these compounds to be direct band gap semiconductors with band gaps of 1.23, 0.68 and 0.19 eV respectively. Lattice constants, tetragonal distortion (η), anion displacement, bond lengths and bulk moduli are calculated by Density Functional Theory based on Tight binding Linear Muffin-Tin orbital method. Our result of structural properties is in good agreement with the available experimental and other theoretical results. Calculated band gaps also agree well with the experimental works within LDA limitation. Unlike other semiconductors in the group II–IV–V{sub 2}, there is a reduction in the band gap of 0.22, 0.20 and 0.24 eV respectively in ZnSnX{sub 2} (X=P, As, Sb) due to p–d hybridization. Structural distortion decreases band gap by 0.20, 0.12 and 0.10 eV respectively. We find that cation electronegativity effect is responsible for increasing the band gap relative to their binary analogs GaInP{sub 2}, InGaAs{sub 2} and GaInSb{sub 2} respectively and increment are 0.13, 0.04 and 0.13 eV respectively. - Graphical abstract: One unit cell of ZnSnX{sub 2} (X=P, As, Sb) chalcopyrite semiconductor. Semiconductors ZnSnX{sub 2} (X=P, As, Sb) are found to be direct band gap semiconductors with band gaps 1.23, 0.68 and 0.19 eV respectively. The quantitative estimate of effects of p–d hybridization, structural distortion and cation electronegativity shows band gaps change significantly due to these effects. Highlights: ► ZnSnX{sub 2} (X=P, As, Sb) are direct band gap semiconductors. ► These have band gaps of 1.23 eV, 0.68 eV and 0.19 eV respectively. ► The band gap reduction due to p–d hybridization is 13.41%, 18.51% and 40% respectively. ► Band gap reduction due to structural distortion is 12.12%, 11.11% and 16.66% respectively. ► Band gap increases 8.38%, 3.70% and 21.31% respectively

  11. Strong effect of low-dimensional Fe-doped cobalt niobate on a strongly ferrimagnetic system

    NASA Astrophysics Data System (ADS)

    Nlebedim, Cajetan; Jiles, David

    2015-03-01

    In this work, the first investigation of the effect of Fe-doped cobalt niobate (CoNb2O6) imbedded in the matrix of a strongly ferrimagnetic cobalt-iron oxide, is presented. The temperature dependence of the magnetic properties and how they change with variations in the concentration of CoNb2O6 is also presented. CoNb2O6 is a prototypical low-dimensional material belonging to the pyrochlore-type AB2O6 systems. Its low-dimensional magnetic characteristics can help in understanding the magnetic properties of higher order systems. It has been investigated for applications in resonators and capacitors. This work shows that the magnetization of the ferrimagnetic phase is strongly affected by the concentration of Co ions in the low-dimensional phase, below 15 K but changes in coercivity with temperature were predominantly due to the ferrimagnetic phase. The systematic variation in the concentration of both phases and the cation ratio in each phase, enable us to understand the variation of the magnetic properties with temperature. This work provides useful insights into tuning the magnetism in strongly magnetic materials with transition metal AB2O6 systems imbedded in their matrices. This work was supported by the USDoE, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division. The research was performed at Ames Laboratory, operated for the USDoE by Iowa State University (Contract # DE-AC02-07CH11358).

  12. Projecting low-dimensional chaos from spatiotemporal dynamics in a model for plastic instability

    NASA Astrophysics Data System (ADS)

    Sarmah, Ritupan; Ananthakrishna, G.

    2012-11-01

    We investigate the possibility of projecting low-dimensional chaos from spatiotemporal dynamics of a model for a kind of plastic instability observed under constant strain rate deformation conditions. We first discuss the relationship between the spatiotemporal patterns of the model reflected in the nature of dislocation bands and the nature of stress serrations. We show that at low applied strain rates, there is a one-to-one correspondence with the randomly nucleated isolated bursts of mobile dislocation density and the stress drops. We then show that the model equations are spatiotemporally chaotic by demonstrating the number of positive Lyapunov exponents and Lyapunov dimension scale with the system size at low and high strain rates. Using a modified algorithm for calculating correlation dimension density, we show that the stress-strain signals at low applied strain rates corresponding to spatially uncorrelated dislocation bands exhibit features of low-dimensional chaos. This is made quantitative by demonstrating that the model equations can be approximately reduced to space-independent model equations for the average dislocation densities, which is known to be low-dimensionally chaotic. However, the scaling regime for the correlation dimension shrinks with increasing applied strain rate due to increasing propensity for propagation of the dislocation bands.

  13. Projecting low-dimensional chaos from spatiotemporal dynamics in a model for plastic instability.

    PubMed

    Sarmah, Ritupan; Ananthakrishna, G

    2012-11-01

    We investigate the possibility of projecting low-dimensional chaos from spatiotemporal dynamics of a model for a kind of plastic instability observed under constant strain rate deformation conditions. We first discuss the relationship between the spatiotemporal patterns of the model reflected in the nature of dislocation bands and the nature of stress serrations. We show that at low applied strain rates, there is a one-to-one correspondence with the randomly nucleated isolated bursts of mobile dislocation density and the stress drops. We then show that the model equations are spatiotemporally chaotic by demonstrating the number of positive Lyapunov exponents and Lyapunov dimension scale with the system size at low and high strain rates. Using a modified algorithm for calculating correlation dimension density, we show that the stress-strain signals at low applied strain rates corresponding to spatially uncorrelated dislocation bands exhibit features of low-dimensional chaos. This is made quantitative by demonstrating that the model equations can be approximately reduced to space-independent model equations for the average dislocation densities, which is known to be low-dimensionally chaotic. However, the scaling regime for the correlation dimension shrinks with increasing applied strain rate due to increasing propensity for propagation of the dislocation bands. PMID:23214858

  14. Enhancing Crystalline Structural Orders of Polymer Semiconductors for Efficient Charge Transport via Polymer-Matrix-Mediated Molecular Self-Assembly.

    PubMed

    Lei, Yanlian; Deng, Ping; Lin, Ming; Zheng, Xuelin; Zhu, Furong; Ong, Beng S

    2016-08-01

    A facile polymer-matrix-mediated molecular self-assembly of polymer semiconductors into highly crystalline orders for efficient charge transport in organic thin-film transistors is demonstrated. Phenomenal enhancements in field-effect mobility of about one order of magnitude and current on/off ratio of two to three orders of magnitude are realized with polyacrylonitrile-incorporated polymer semiconductor compositions via solution deposition. PMID:27168128

  15. CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    1998-01-01

    A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.

  16. Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

    SciTech Connect

    Hossain, Nadir; Sweeney, Stephen; Hosea, Jeff; Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang; Kunert, Bernerdette

    2013-12-04

    We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.

  17. Amplified spontaneous emission in an organic semiconductor multilayer waveguide structure including a highly conductive transparent electrode

    NASA Astrophysics Data System (ADS)

    Reufer, M.; Feldmann, J.; Rudati, P.; Ruhl, A.; Müller, D.; Meerholz, K.; Karnutsch, C.; Gerken, M.; Lemmer, U.

    2005-05-01

    We demonstrate that the amplified spontaneous emission (ASE) threshold in multilayer waveguide structures suitable for the use in future organic injection lasers can be drastically reduced by inserting a crosslinked hole transport layer (HTL) between a highly conductive indium tin oxide (ITO) electrode and the polymer emission layer. While no ASE is observed when the active layer material is directly spincoated onto the ITO electrode, it can be completely restored upon insertion of a 300-nm-thick HTL. This observation is attributed to reduced attenuation of the waveguided mode enabling the ASE process and is theoretically confirmed by calculations of the mode intensity fraction propagating in the absorptive ITO electrode.

  18. Estimation of carrier mobility at organic semiconductor/insulator interface using an asymmetric capacitive test structure

    NASA Astrophysics Data System (ADS)

    Agarwal, Rajesh; Agarwal, Ashish K.; Mazhari, Baquer

    2016-04-01

    Mobility of carriers at the organic/insulator interface is crucial to the performance of organic thin film transistors. The present work describes estimation of mobility using admittance measurements performed on an asymmetric capacitive test structure. Besides the advantage of simplicity, it is shown that at low frequencies, the measured capacitance comes from a large area of channel making the capacitance-voltage characteristics insensitive to contact resistances. 2-D numerical simulation and experimental results obtained with Pentacene/Poly(4-vinyphenol) system are presented to illustrate the operation and advantages of the proposed technique.

  19. Structural and magnetic properties of Co + implanted n-GaN dilute magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Husnain, G.; Tao, Fa; Yao, Shu-De

    2010-05-01

    The n-type GaN epilayer was grown on sapphire prepared by metal organic chemical vapour deposition and subsequently Co + ions implanted. The properties of Co + ions implanted GaN epilayer were investigated by structural and magnetic measurements. The results of Rutherford backscattering spectrometry and channeling illustrate that an excellent crystalline quality ( χmin=1.3%) of as-grown GaN. After the implantation of 150 keV Co + ions with dose 3×10 16 cm -2 into GaN and subsequently annealed at 700, 800 and 900 °C, no secondary phase or metal related-peaks were detected by typical XRD. In addition high-resolution X-ray diffraction (HRXRD) was performed to study structural related properties. The magnetization curves were obtained by SQUID and AGM measurements, a well-defined hysteresis loop was observed even at 300 K. The temperature dependence of magnetization was taken in FC and ZFC conditions showed the highest Curie temperature ( TC) ∼370 K recorded for Co + implanted GaN.

  20. Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure

    NASA Astrophysics Data System (ADS)

    Korenev, V. L.; Salewski, M.; Akimov, I. A.; Sapega, V. F.; Langer, L.; Kalitukha, I. V.; Debus, J.; Dzhioev, R. I.; Yakovlev, D. R.; Müller, D.; Schröder, C.; Hövel, H.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Kusrayev, Yu. G.; Bayer, M.

    2016-01-01

    Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wavefunction overlap and is therefore short-ranged, so that it may be compromised across the hybrid interface. Here we study a hybrid structure consisting of a ferromagnetic Co layer and a semiconducting CdTe quantum well, separated by a thin (Cd, Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wavefunction overlap of quantum well holes and magnetic atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 30 nm. We suggest that the resulting spin polarization of acceptor-bound holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.

  1. Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures.

    PubMed

    Zhou, Peiqi; Gan, Zhikai; Huang, Xu; Mei, Chunlian; Huang, Meizhen; Xia, Yuxing; Wang, Hui

    2016-01-01

    Owing to the innate stabilization of built-in potential in p-n junction or metal-oxide-semiconductor structure, the sensitivity and linearity of most lateral photovoltaic effect (LPE) devices is always fixed after fabrication. Here we report a nonvolatile and tunable switching effect of lateral photo-voltage (LPV) in Cu dusted ultrathin metal-oxide-semiconductor structure. With the stimulation of electric pulse and local illumination, the sensitivity and linearity of LPV can be adjusted up and down in a nonvolatile manner. This phenomenon is attributed to a controllable change of the Schottky barrier formed between the metal layer and silicon substrate, including the consequent change of film resistivity. This work may widely improve the performance of existing LPE-based devices and suggest new applications for LPE in other areas. PMID:27535351

  2. Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures

    PubMed Central

    Zhou, Peiqi; Gan, Zhikai; Huang, Xu; Mei, Chunlian; Huang, Meizhen; Xia, Yuxing; Wang, Hui

    2016-01-01

    Owing to the innate stabilization of built-in potential in p–n junction or metal-oxide-semiconductor structure, the sensitivity and linearity of most lateral photovoltaic effect (LPE) devices is always fixed after fabrication. Here we report a nonvolatile and tunable switching effect of lateral photo-voltage (LPV) in Cu dusted ultrathin metal-oxide-semiconductor structure. With the stimulation of electric pulse and local illumination, the sensitivity and linearity of LPV can be adjusted up and down in a nonvolatile manner. This phenomenon is attributed to a controllable change of the Schottky barrier formed between the metal layer and silicon substrate, including the consequent change of film resistivity. This work may widely improve the performance of existing LPE-based devices and suggest new applications for LPE in other areas. PMID:27535351

  3. Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

    SciTech Connect

    Kanaki, Toshiki Asahara, Hirokatsu; Ohya, Shinobu Tanaka, Masaaki

    2015-12-14

    We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

  4. Electron counting and a large family of two-dimensional semiconductors

    NASA Astrophysics Data System (ADS)

    Miao, Maosheng; Botana, Jorge; Zurek, Eva; Liu, Jingyao; Yang, Wen

    Two-dimensional semiconductors (2DSC) are currently the focus of many studies, thanks to their novel and superior transport properties that may greatly influence future electronic devices. The potential applications of 2DSCs range from low-dimensional electronics, topological insulators and vallytronics all the way to novel photolysis. However, compared with the conventional semiconductors that are comprised of main group elements and cover a large range of band gaps and lattice constants, the choice of 2D materials is very limited. In this work, we propose and demonstrate a large family of 2DSCs, all adopting the same structure and consisting of only main group elements. Using advanced density functional calculations, we demonstrate the attainability of these materials, and show that they cover a large range of lattice constants, band gaps and band edge states, making them good candidate materials for heterojunctions. This family of two dimensional materials may be instrumental in the fabrication of 2DSC devices that may rival the currently employed 3D semiconductors.

  5. Research progress on electronic phase separation in low-dimensional perovskite manganite nanostructures

    PubMed Central

    2014-01-01

    Perovskite oxide manganites with a general formula of R1-x AxMnO3 (where R is a trivalent rare-earth element such as La, Pr, Sm, and A is a divalent alkaline-earth element such as Ca, Sr, and Ba) have received much attention due to their unusual electron-transport and magnetic properties, which are indispensable for applications in microelectronic, magnetic, and spintronic devices. Recent advances in the science and technology have resulted in the feature sizes of microelectronic devices based on perovskite manganite oxides down-scaling into nanoscale dimensions. At the nanoscale, low-dimensional perovskite manganite oxide nanostructures display novel physical properties that are different from their bulk and film counterparts. Recently, there is strong experimental evidence to indicate that the low-dimensional perovskite manganite oxide nanostructures are electronically inhomogeneous, consisting of different spatial regions with different electronic orders, a phenomenon that is named as electronic phase separation (EPS). As the geometry sizes of the low-dimensional manganite nanostructures are reduced to the characteristic EPS length scale (typically several tens of nanometers in manganites), the EPS is expected to be strongly modulated, leading to quite dramatic changes in functionality and more emergent phenomena. Therefore, reduced dimensionality opens a door to the new functionalities in perovskite manganite oxides and offers a way to gain new insight into the nature of EPS. During the past few years, much progress has been made in understanding the physical nature of the EPS in low-dimensional perovskite manganite nanostructures both from experimentalists and theorists, which have a profound impact on the oxide nanoelectronics. This nanoreview covers the research progresses of the EPS in low-dimensional perovskite manganite nanostructures such as nanoparticles, nanowires/nanotubes, and nanostructured films and/or patterns. The possible physical origins of the

  6. Effects of graphene defect on electronic structures of its interface with organic semiconductor

    SciTech Connect

    Yang, Qing-Dan; Wang, Chundong; Mo, Hin-Wai; Lo, Ming-Fai; Yuen, Muk Fung; Ng, Tsz-Wai E-mail: apcslee@cityu.edu.hk; Zhang, Wen-Jun; Lee, Chun-Sing E-mail: apcslee@cityu.edu.hk; Dou, Wei-Dong; Tsang, Sai-Wing

    2015-03-30

    Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.

  7. Electronic structure of the antiferromagnetic semiconductor Mn Sb2 S4

    NASA Astrophysics Data System (ADS)

    Matar, S. F.; Weihrich, R.; Kurowski, D.; Pfitzner, A.; Eyert, V.

    2005-06-01

    The electronic band structures of orthorhombic (oP28) and monoclinic (mC28) MnSb2S4 were investigated with ab initio calculations in the local spin density approximation to the density functional theory. An analysis of the electronic properties and of the chemical bonding is provided using the augmented spherical wave method considering nonmagnetic, ferromagnetic, ferrimagnetic, and antiferromagnetic model orderings. In agreement with experimental results both modifications of MnSb2S4 are predicted to be antiferromagnetic. While the experimental band gap is missed for the monoclinic polymorph, the calculated band gap for orthorhombic MnSb2S4 is close to the experimental one.

  8. Properties of insulator-semiconductor interfaces in amorphous silicon solar cell structures

    NASA Astrophysics Data System (ADS)

    Hasegawa, H.; Hara, T.; Arimoto, S.; Ohno, H.; Sawada, T.

    Properties of amorphous silicon surfaces passivated by anodic and plasma CVD dielectrics are investigated, using MIS structures. Detailed MIS C-V and isothermal capacitance spectroscopy (ICTS) measurements were made. In order to analyze the observed extremely complicated behavior, theoretical MIS C-V curves are calculated on the basis of a rigorous admittance analysis. Contrary to the usual assumption that interface states do not play a major role in a-Si surfaces as compared with the bulk gap states, it is shown for the first time that the electrical characteristics of interfaces are controlled predominantly by the interface states and not by the bulk gap states. Interface states have the tendency to pin the surface Fermi level at 0.4 eV from the conduction band edge.

  9. Atomic and electronic structure of interfaces in materials systems for future semiconductor devices

    NASA Astrophysics Data System (ADS)

    Lopatin, Sergei

    Because of the intrinsic limits of the Si/SiO2 based industry, there is a great trend towards the monolithic integration of new materials into already well developed silicon technology. Having lasted for several decades now, downscaling reaches the limit, in which a critical device dimension approaches the size of one atom. At this level of the miniaturization, it is not the bulk material, but the interface between the two materials that what controls the properties of the resulting optoelectronic device. Thus, the characterization of precise atomic arrangements at different interfaces and the influence of these arrangements on the optoelectronic properties of interfaces is required. Therefore, in this study, a combination of scanning transmission electron microscopy (STEM) techniques and density functional theory calculations was used as a research tool for the characterization of interfaces. The STEM instruments used for the study were equipped with prototypes of spherical aberration correctors, enabling to achieve the highest resolution currently available both in space and energy. The combination of experimental and theoretical methods was applied to study interfaces between Si/GaAs, Si/Ge, Ge/SiO2, Si/HfO2 and Si/Al2O3. As the result of the present research, a new dislocation configuration at the Si/GaAs interface was reported for the first time. The influence of this dislocation structure on the electrical properties of the Si/GaAs interface was analyzed. Also, the transition from Si to GaAs and from Si to Ge at corresponding interfaces was described with atomic precision. For the first time, the interface between Ge and SiO2 was shown to have "ideal" characteristics (chemical abruptness and sharpness). This indicates the potential, both for a more successful use of Ge in high-speed devices and for advances in interface engineering to enhance performance in electronic devices. The features of Si/HfO2 and Si/Al2O3 interfaces, namely the distribution and

  10. High Spatial Resolution Spectroscopy of Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Harris, Timothy D.; Gershoni, David; Pfeiffer, Loren N.

    1996-03-01

    Several recent reports employing high spatial resolution have revealed the dominance of exciton localization in the low temperature luminescence of semiconductor quantum structures.^[1-3] Understanding this localization is of critical importance for the reliable studies of low dimensional structures such as quantum wells, quantum wires and quantum dots. We report on low temperature and high spatial resolution photoluminescence and photoluminescence excitation studies of cleaved edge overgrown (CEO) single quantum wires. These samples permit the direct and unambiguous comparison between the optical properties of a (100) oriented quantum well, a (110) oriented quantum well, and the quantum wire which is formed at their intersection. Using low temperature near field optical spectroscopy, and a novel diffraction limited far field apparatus, we determine the carrier diffusion length dependence on pump wavelength and sample temperature in both the 2d systems and the genuinely 1D wire system. We also measure the absorption strength of the 1D system and find it to be a factor of 3 stronger than the absorption of the associated 2D systems.^[2] Using low temperature near field optical spectroscopy, and a novel diffraction limited far field apparatus, we also determine the carrier diffusion length dependence on pump wavelength and sample temperature. ^[1] H. F. Hess, E. Betzig, T. D. Harris, L. N. Pfeiffer, and K. W. West, Science 264, 1740 (1994). ^[2] T. D. Harris, D. Gershoni, R. D. Grober, L. Pfeiffer, K. West, and N. Chand, Appl. Phys. Lett, in press (1996) ^[3] D. Gammon, E. S. Snow, and D. S. Katzer, Appl. Phys. Lett. 67, 2391 (1995)

  11. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  12. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    NASA Astrophysics Data System (ADS)

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-12-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  13. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing.

    PubMed

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm(2)) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode. PMID:25593550

  14. Epitaxy of polar semiconductor Co3O4 (110): Growth, structure, and characterization

    NASA Astrophysics Data System (ADS)

    Kormondy, Kristy J.; Posadas, Agham B.; Slepko, Alexander; Dhamdhere, Ajit; Smith, David J.; Mitchell, Khadijih N.; Willett-Gies, Travis I.; Zollner, Stefan; Marshall, Luke G.; Zhou, Jianshi; Demkov, Alexander A.

    2014-06-01

    The (110) plane of Co3O4 spinel exhibits significantly higher rates of carbon monoxide conversion due to the presence of active Co3+ species at the surface. However, experimental studies of Co3O4 (110) surfaces and interfaces have been limited by the difficulties in growing high-quality films. We report thin (10-250 Å) Co3O4 films grown by molecular beam epitaxy in the polar (110) direction on MgAl2O4 substrates. Reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and transmission electron microscopy measurements attest to the high quality of the as-grown films. Furthermore, we investigate the electronic structure of this material by core level and valence band x-ray photoelectron spectroscopy, and first-principles density functional theory calculations. Ellipsometry reveals a direct band gap of 0.75 eV and other interband transitions at higher energies. A valence band offset of 3.2 eV is measured for the Co3O4/MgAl2O4 heterostructure. Magnetic measurements show the signature of antiferromagnetic ordering at 49 K. FTIR ellipsometry finds three infrared-active phonons between 300 and 700 cm-1.

  15. Strain Engineering of the Band Structure and Picosecond Carrier Dynamics of Single Semiconductor Nanowires Probed by Modulated Rayleigh Scattering Microscopy

    NASA Astrophysics Data System (ADS)

    Montazeri, Mohammad

    The band structure and carrier dynamics of GaAs, GaAs/GaP and InP semiconductor nanowires is explored using a variety of optical spectroscopy techniques including two newly developed techniques called Photomodulated and Transient Rayleigh scattering spectroscopy. The stress and electronic band structure of as-grown highly strained GaAs/GaP core/shell nanowire is studied via room temperature Raman scattering by phonons and low temperature photoluminescence spectroscopy. Raman measurements reveal the uniaxial nature of the shell-induced stress in the core GaAs nanowire with a significantly different degree of compression in the radial plane and axial direction of the nanowire. The uniaxial stress dramatically modifies the electronic band structure of the nanowire. Raman measurements predict that the shell-induced stress should shift the band gap of GaAs to higher energies by ~260 meV which is experimentally confirmed by low temperature photoluminescence spectroscopy. Furthermore, it is predicted that the uniaxial stress in the nanowire removes the degeneracy of the heavy and light hole valence bands at the zone center by ~100 meV. In order to probe the electronic band structure of single nanowires with high spatial and spectral resolution, the new technique of Photomodulated Rayleigh Scattering spectroscopy (PMRS) is introduced. We show that by photomodulating the dielectric function of the nanowire, the background-free and robust differential Rayleigh spectrum measures the band structure of the nanowire with exceptionally high energy resolution. PMRS measurements are performed on zincblende GaAs and zincblende and wurtzite InP nanowires at both room and low temperature. Furthermore, we show that the diameters of the nanowires can be extracted from the PMRS spectra with an uncertainty of only a few nanometers. By extending the PMRS spectroscopy into time domain, we introduce Transient Rayleigh Scattering spectroscopy (TRS) to study the ultrafast carrier dynamics and

  16. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    SciTech Connect

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizing the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.

  17. Optical properties and structural phase transitions of lead-halide based inorganic-organic 3D and 2D perovskite semiconductors under high pressure

    NASA Astrophysics Data System (ADS)

    Matsuishi, K.; Ishihara, T.; Onari, S.; Chang, Y. H.; Park, C. H.

    2004-11-01

    Optical absorption, photoluminescence and Raman scattering of lead-halide based inorganic-organic perovskite semiconductors were measured under quasi-hydrostatic pressure at room temperature. For the 3D perovskite semiconductor, (CH3NH3)PbBr3, the free exciton photoluminescence band exhibits red-shifts with pressure, and jumps to a higher energy by 0.07 eV at 0.8 GPa, which is associated with a phase transition from a cubic to an orthorhombic structure confirmed by Raman scattering. Above the phase transition pressure, the exciton band shows blue-shifts with further increasing pressure, and eventually disappears above 4.7 GPa. The results are compared with those for the 2D perovskite semiconductor, (C4H9NH3)2PbI4. First principles pseudopotential calculations were performed to investigate changes in octahedral distortion and electronic band structures with pressure. The calculations have explained the origins of the intriguing changes in the electronic states with pressure in view of bonding characters between atomic orbitals in octahedra.

  18. Low Dimensional Models of Shell Vibrations. Parametrically Excited Vibrations of Cylinder Shells

    NASA Astrophysics Data System (ADS)

    Popov, A. A.; Thompson, J. M. T.; McRobie, F. A.

    1998-01-01

    Vibrations of cylindrical shells parametrically excited by axial forcing are considered. The governing system of two coupled non-linear partial differential equations is discretized by using Lagrange equations. The computation is simplified significantly by the application of computer algebra and as a result low dimensional models of shell vibrations are readily obtained. After applying numerical continuation techniques and ideas from dynamical systems theory, complete bifurcation diagrams are constructed. The principal aim is to investigate the interaction between different modes of shell vibration. Results for system models with two of the lowest modes are discussed.

  19. Nonadiabatic stationary behavior in a driven low-dimensional gapped system

    NASA Astrophysics Data System (ADS)

    Maraga, Anna; Smacchia, Pietro; Fabrizio, Michele; Silva, Alessandro

    2014-07-01

    We discuss the emergence of nonadiabatic behavior in the dynamics of the order parameter in a low-dimensional quantum many-body system subject to a linear ramp of one of its parameters. While performing a ramp within a gapped phase seems to be the most favorable situation for adiabaticity, we show that such a change leads eventually to the disruption of the order, no matter how slowly the ramp is performed. We show this in detail by studying the dynamics of the one-dimensional quantum Ising model subject to linear variation of the transverse magnetic field within the ferromagnetic phase, and then propose a general argument applicable to other systems.

  20. Two-site entropy and quantum phase transitions in low-dimensional models.

    PubMed

    Legeza, O; Sólyom, J

    2006-03-24

    We propose a new approach to study quantum phase transitions in low-dimensional lattice models. It is based on studying the von Neumann entropy of two neighboring central sites in a long chain. It is demonstrated that the procedure works equally well for fermionic and spin models, and the two-site entropy is a better indicator of quantum phase transition than calculating gaps, order parameters, or the single-site entropy. The method is especially convenient when the density-matrix renormalization-group algorithm is used. PMID:16605844

  1. Low-Dimensional Palladium Nanostructures for Fast and Reliable Hydrogen Gas Detection

    PubMed Central

    Noh, Jin-Seo; Lee, Jun Min; Lee, Wooyoung

    2011-01-01

    Palladium (Pd) has received attention as an ideal hydrogen sensor material due to its properties such as high sensitivity and selectivity to hydrogen gas, fast response, and operability at room temperature. Interestingly, various Pd nanostructures that have been realized by recent developments in nanotechnologies are known to show better performance than bulk Pd. This review highlights the characteristic properties, issues, and their possible solutions of hydrogen sensors based on the low-dimensional Pd nanostructures with more emphasis on Pd thin films and Pd nanowires. The finite size effects, relative strengths and weaknesses of the respective Pd nanostructures are discussed in terms of performance, manufacturability, and practical applicability. PMID:22346605

  2. Anderson transition in low-dimensional disordered systems driven by long-range nonrandom hopping.

    PubMed

    Rodríguez, A; Malyshev, V A; Sierra, G; Martín-Delgado, M A; Rodríguez-Laguna, J; Domínguez-Adame, F

    2003-01-17

    The single-parameter scaling hypothesis predicts the absence of delocalized states for noninteracting quasiparticles in low-dimensional disordered systems. We show analytically, using a supersymmetric method combined with a renormalization group analysis, as well as numerically that extended states may occur in the one- and two-dimensional Anderson model with a nonrandom hopping falling off as some power of the distance between sites. The different size scaling of the bare level spacing and the renormalized magnitude of the disorder seen by the quasiparticles finally results in the delocalization of states at one of the band edges of the quasiparticle energy spectrum. PMID:12570579

  3. Low-dimensional chaos in magnetospheric activity from AE time series

    NASA Technical Reports Server (NTRS)

    Vassiliadis, D. V.; Sharma, A. S.; Eastman, T. E.; Papadopoulos, K.

    1990-01-01

    The magnetospheric response to the solar-wind input, as represented by the time-series measurements of the auroral electrojet (AE) index, has been examined using phase-space reconstruction techniques. The system was found to behave as a low-dimensional chaotic system with a fractal dimension of 3.6 and has Kolmogorov entropy less than 0.2/min. These indicate that the dynamics of the system can be adequately described by four independent variables, and that the corresponding intrinsic time scale is of the order of 5 min. The relevance of the results to magnetospheric modeling is discussed.

  4. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  5. Hybrid germanium iodide perovskite semiconductors: active lone pairs, structural distortions, direct and indirect energy gaps, and strong nonlinear optical properties.

    PubMed

    Stoumpos, Constantinos C; Frazer, Laszlo; Clark, Daniel J; Kim, Yong Soo; Rhim, Sonny H; Freeman, Arthur J; Ketterson, John B; Jang, Joon I; Kanatzidis, Mercouri G

    2015-06-01

    The synthesis and properties of the hybrid organic/inorganic germanium perovskite compounds, AGeI3, are reported (A = Cs, organic cation). The systematic study of this reaction system led to the isolation of 6 new hybrid semiconductors. Using CsGeI3 (1) as the prototype compound, we have prepared methylammonium, CH3NH3GeI3 (2), formamidinium, HC(NH2)2GeI3 (3), acetamidinium, CH3C(NH2)2GeI3 (4), guanidinium, C(NH2)3GeI3 (5), trimethylammonium, (CH3)3NHGeI3 (6), and isopropylammonium, (CH3)2C(H)NH3GeI3 (7) analogues. The crystal structures of the compounds are classified based on their dimensionality with 1–4 forming 3D perovskite frameworks and 5–7 1D infinite chains. Compounds 1–7, with the exception of compounds 5 (centrosymmetric) and 7 (nonpolar acentric), crystallize in polar space groups. The 3D compounds have direct band gaps of 1.6 eV (1), 1.9 eV (2), 2.2 eV (3), and 2.5 eV (4), while the 1D compounds have indirect band gaps of 2.7 eV (5), 2.5 eV (6), and 2.8 eV (7). Herein, we report on the second harmonic generation (SHG) properties of the compounds, which display remarkably strong, type I phase-matchable SHG response with high laser-induced damage thresholds (up to ∼3 GW/cm(2)). The second-order nonlinear susceptibility, χS(2), was determined to be 125.3 ± 10.5 pm/V (1), (161.0 ± 14.5) pm/V (2), 143.0 ± 13.5 pm/V (3), and 57.2 ± 5.5 pm/V (4). First-principles density functional theory electronic structure calculations indicate that the large SHG response is attributed to the high density of states in the valence band due to sp-hybridization of the Ge and I orbitals, a consequence of the lone pair activation. PMID:25950197

  6. Structure and dynamics in low-dimensional guest-host systems

    SciTech Connect

    John E. Fischer

    2000-05-01

    This is the final report of the fourth of four three year grants of the same title. The program evolved from an earlier DOE grant on graphite intercalation compounds. Since its inception eight years ago, the focus evolved continuously from conjugated polymers to fullerenes, disordered carbons for Li-ion battery applications, and most recently carbon nanotubes, with side excursion back to GIC's to exploit a recent advance in synthesis of a potentially exciting new phase. The unifying themes are the versatility of carbon in forming novel solids, and the flexibility of intercalation chemistry to provide new materials with potentially useful properties.

  7. The Structuring of Shared Voluntary Standards in the U.S. Semiconductor Industry: Communicating to Reach Agreement.

    ERIC Educational Resources Information Center

    Browning, Larry D.; Beyer, Janice M.

    1998-01-01

    Contributes to scholarship on organizational communication by tracing how voluntary cooperative standards were developed for the semiconductor industry through reflexive communication processes initiated by the SEMATECH consortium. Analyzes seven pivotal incidents that show how increased communication produced new provinces of meaning, actions,…

  8. Functional Connectivity among Spikes in Low Dimensional Space during Working Memory Task in Rat

    PubMed Central

    Tian, Xin

    2014-01-01

    Working memory (WM) is critically important in cognitive tasks. The functional connectivity has been a powerful tool for understanding the mechanism underlying the information processing during WM tasks. The aim of this study is to investigate how to effectively characterize the dynamic variations of the functional connectivity in low dimensional space among the principal components (PCs) which were extracted from the instantaneous firing rate series. Spikes were obtained from medial prefrontal cortex (mPFC) of rats with implanted microelectrode array and then transformed into continuous series via instantaneous firing rate method. Granger causality method is proposed to study the functional connectivity. Then three scalar metrics were applied to identify the changes of the reduced dimensionality functional network during working memory tasks: functional connectivity (GC), global efficiency (E) and casual density (CD). As a comparison, GC, E and CD were also calculated to describe the functional connectivity in the original space. The results showed that these network characteristics dynamically changed during the correct WM tasks. The measure values increased to maximum, and then decreased both in the original and in the reduced dimensionality. Besides, the feature values of the reduced dimensionality were significantly higher during the WM tasks than they were in the original space. These findings suggested that functional connectivity among the spikes varied dynamically during the WM tasks and could be described effectively in the low dimensional space. PMID:24658291

  9. A low-dimensional deformation model for cancer cells in flow

    NASA Astrophysics Data System (ADS)

    Lee, A. M.; Berny-Lang, M. A.; Liao, S.; Kanso, E.; Kuhn, P.; McCarty, O. J. T.; Newton, P. K.

    2012-08-01

    A low-dimensional parametric deformation model of a cancer cell under shear flow is developed. The model is built around an experiment in which MDA-MB-231 adherent cells are subjected to flow with increasing shear. The cell surface deformation is imaged using differential interference contrast microscopy imaging techniques until the cell releases into the flow. We post-process the time sequence of images using an active shape model from which we obtain the principal components of deformation. These principal components are then used to obtain the parameters in an empirical constitutive equation determining the cell deformations as a function of the fluid normal and shear forces imparted. The cell surface is modeled as a 2D Gaussian interface which can be deformed with three active parameters: H (height), σx (x-width), and σy (y-width). Fluid forces are calculated on the cell surface by discretizing the surface with regularized Stokeslets, and the flow is driven by a stochastically fluctuating pressure gradient. The Stokeslet strengths are obtained so that viscous boundary conditions are enforced on the surface of the cell and the surrounding plate. We show that the low-dimensional model is able to capture the principal deformations of the cell reasonably well and argue that active shape models can be exploited further as a useful tool to bridge the gap between experiments, models, and numerical simulations in this biological setting.

  10. First-principles investigation of electronic structure, effective carrier masses, and optical properties of ferromagnetic semiconductor CdCr2S4

    NASA Astrophysics Data System (ADS)

    Xu-Hui, Zhu; Xiang-Rong, Chen; Bang-Gui, Liu

    2016-05-01

    The electronic structures, the effective masses, and optical properties of spinel CdCr2S4 are studied by using the full-potential linearized augmented planewave method and a modified Becke–Johnson exchange functional within the density-functional theory. Most importantly, the effects of the spin–orbit coupling (SOC) on the electronic structures and carrier effective masses are investigated. The calculated band structure shows a direct band gap. The electronic effective mass and the hole effective mass are analytically determined by reproducing the calculated band structures near the BZ center. SOC substantially changes the valence band top and the hole effective masses. In addition, we calculated the corresponding optical properties of the spinel structure CdCr2S4. These should be useful to deeply understand spinel CdCr2S4 as a ferromagnetic semiconductor for possible semiconductor spintronic applications. Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (Grant Nos. U1430117 and U1230201).

  11. Charge carrier dynamics of methylammonium lead iodide: from PbI₂-rich to low-dimensional broadly emitting perovskites.

    PubMed

    Klein, Johannes R; Flender, Oliver; Scholz, Mirko; Oum, Kawon; Lenzer, Thomas

    2016-04-28

    We provide an investigation of the charge carrier dynamics of the (MAI)(x)(PbI2)(1-x) system in the range x = 0.32-0.90 following the recently published "pseudobinary phase-composition processing diagram" of Song et al. (Chem. Mater., 2015, 27, 4612). The dynamics were studied using ultrafast pump-supercontinuum probe spectroscopy over the pump fluence range 2-50 μJ cm(-2), allowing for a wide variation of the initial carrier density. At high MAI excess (x = 0.90), low-dimensional perovskites (LDPs) are formed, and their luminescence spectra are significantly blue-shifted by ca. 50 nm and broadened compared to the 3D perovskite. The shift is due to quantum confinement effects, and the inhomogeneous broadening arises from different low-dimensional structures (predominantly 2D, but presumably also 1D and 0D). Accurate transient carrier temperatures are extracted from the transient absorption spectra. The regimes of carrier-carrier, carrier-optical phonon and acoustic phonon scattering are clearly distinguished. Perovskites with mole fractions x ≤ 0.71 exhibit extremely fast carrier cooling (ca. 300 fs) at low fluence of 2 μJ cm(-2), however cooling slows down significantly at high fluence of 50 μJ cm(-2) due to the "hot phonon effect" (ca. 2.8 ps). A kinetic analysis of the electron-hole recombination dynamics provides second-order recombination rate constants k2 which decrease from 5.3 to 1.5 × 10(-9) cm(3) s(-1) in the range x = 0.32-0.71. In contrast, recombination in the LDPs (x = 0.90) is more than one order of magnitude faster, 6.4 × 10(-8) cm(3) s(-1), which is related to the confined perovskite structure. Recombination in these LDPs should be however still slow enough for their potential application as efficient broadband emitters or solar light-harvesting materials. PMID:26972104

  12. Solution-processed low dimensional nanomaterials with self-assembled polymers for flexible photo-electronic devices (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Park, Cheolmin

    2015-09-01

    Self assembly driven by complicated but systematic hierarchical interactions offers a qualified alternative for fabricating functional micron or nanometer scale pattern structures that have been potentially useful for various organic and nanotechnological devices. Self assembled nanostructures generated from synthetic polymer systems such as controlled polymer blends, semi-crystalline polymers and block copolymers have gained a great attention not only because of the variety of nanostructures they can evolve but also because of the controllability of these structures by external stimuli. In this presentation, various novel photo-electronic materials and devices are introduced based on the solution-processed low dimensional nanomaterials such as networked carbon nanotubes (CNTs), reduced graphene oxides (rGOs) and 2 dimensional transition metal dichalcogenides (TMDs) with self assembled polymers including field effect transistor, electroluminescent device, non-volatile memory and photodetector. For instance, a nanocomposite of networked CNTs and a fluorescent polymer turned out an efficient field induced electroluminescent layer under alternating current (AC) as a potential candidate for next generation displays and lightings. Furthermore, scalable and simple strategies employed for fabricating rGO as well as TMD nanohybrid films allowed for high performance and mechanically flexible non-volatile resistive polymer memory devices and broad band photo-detectors, respectively.

  13. Gallium nitrogen arsenide and gallium arsenic bismuth: Structural and electronic properties of two resonant state semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Young, Erin Christina

    Semiconductor alloys that are lattice matched to GaAs but have a smaller energy band gap are of interest for numerous applications, including infrared lasers for telecommunications, high efficiency solar cells, and high electron mobility transistors. For high optoelectronic efficiency, these materials must be highly perfect single crystals with low defect densities. In this thesis, two substitutional GaAs-based alloy families, nitrides and bismides, are investigated experimentally. In the first alloy, GaNAs, the addition of N results in a large band gap reduction, though the small size of the N relative to As introduces tensile strain into the lattice, and the high electronegativity of N attracts electrons. The second alloy, GaAsBi, also has a smaller band gap and is formed by the addition of the very large Bi atom to GaAs, which introduces compressive strain and tends to attract holes. The experimental investigations of these alloys focused on elucidating the relationships between the growth process, atomic structure, and electronic properties. Films were grown by molecular beam epitaxy (MBE) with in-situ process monitoring and subject to post-growth structural and electronic characterization. For GaNAs and a related alloy. InGaNAs, degradation in luminescence efficiency, mobility and structural integrity were observed as the nitrogen content of the alloy was increased. A comprehensive study of strain relaxation in compressively strained InGaNAs and InGaAs quantum wells revealed that the nitrogen alloying did not have an effect on the critical thickness for dislocation formation, or the dislocation density in relaxed films. At large lattice mismatch, InGaNAs quantum wells were observed to relax by means of unusually oriented pure edge-type misfit dislocations aligned with <100> directions, likely due to the high stress associated with the large misfit. Use of bismuth as a non-incorporating surfactant during growth was successfully applied to improve the material

  14. III-VI semiconductors and oxides: Electronic structure, surface morphology, and transition metal doping of gallium selenide, indium selenide, and gallium oxide

    NASA Astrophysics Data System (ADS)

    Lovejoy, Tracy Clark

    The effects of vacancies on the properties of certain III2VI 3 semiconductor compounds are studied with the goal of learning new, interesting physics while laying the groundwork for using these materials in next generation electronic devices. These III-VI materials exhibit intrinsic nanoscale voids or vacancies that order in different ways and impact the electronic structure, dopant incorporation and defect formation. Ga2Se3 and gamma-In2Se3 are tetrahedrally bonded III-VI semiconductors with 1/3 of the cation sites vacant. Lattice matching allows excellent quality growth of Ga2Se 3 on silicon by molecular beam epitaxy. Comparison of our experimental map of the electronic band structure with theory shows proper theoretical treatment of the vacancies is essential to generate the band structure. We use scanning tunneling microscopy and X-ray absorption to study the Mn-doping of Ga2Se3, an intriguing candidate dilute magnetic semiconductor (DMS) system. Thin uniformly doped films of Mn-doped Ga2Se 3 were grown at low concentrations, but thicker or more concentrated films exhibit islands of MnSe. This may limit the applicability of Mn-doped Ga2Se3 as a DMS. gamma-In2Se3 has a large lattice mismatch (˜7%) with silicon, which suggests that thick laminar films of In2Se 3 on silicon should not be possible. However, we find that laminar films can be grown up to at least 6 bilayer thickness, and show that this is due to an unusual Se-first interface with the silicon substrate. beta-Ga2O3 is an optically transparent, III-VI semiconductor that generally exhibits n-type conductivity. We study the electronic structure, magnetic structure, surface termination, and surface morphology of pure, Mn- and Cr-doped beta-Ga2O3 single crystals. Cr3+ and mixed valence Mn2+/3+ occupy the octahedral sites in the structure. Mn incorporation degrades the crystal quality, while Cr does not. We use density functional theory to compute the activation energy of au oxygen vacancy defect, and find

  15. Structure and optoelectronic properties of spray deposited Mg doped p-CuCrO2 semiconductor oxide thin films

    NASA Astrophysics Data System (ADS)

    Rastogi, A. C.; Lim, S. H.; Desu, S. B.

    2008-07-01

    Transparent p-type Mg doped CuCrO2 wide-band-gap oxide semiconductor thin films were deposited over quartz substrates by chemical spray technique using metallo-organic precursors. Crystalline single phase CuCrO2 delafossite structure was dominant in ≥700 °C argon ambient annealed films but the as-deposited films contained spinel CuCr2O4 mixed phases. X-ray photoelectron Cr 2p spectra show spin-orbit splitting energy ˜9.8 eV consistent with Cr3+ valance state and Cr 2p3/2 resolved peaks show mixed valence state on Cr4+/Cr6+ confirming CuCr0.93Mg0.07O2 compound phase in spray deposited films. The effect of substrate temperature and film thickness on optical, electrical conductivity, and thermoelectric coefficient was investigated. Highly transparent ≥80% CuCr0.93Mg0.07O2 films with direct and indirect optical band gaps of 3.08 and 2.58 eV for 155 nm and 3.14 and 2.79 for 305 nm thin films, respectively, were obtained. Photoluminescence emission bands at 532 and 484 nm interpreted to arise from 3d94s1 and 3d10 Cu+ intraband transitions confirm mixing of Cu 3d, 4s, and 4p with O 2p orbitals necessary for realizing p-type CuCrO2 films. Electrical conductivity of CuCr0.93Mg0.07O2 films ranged 0.6-1 S cm-1 exhibiting activation energies ˜0.11 eV in 300-420 °K and ˜0.23 eV in ≥420 °K regions ascribed to activated conduction and grain boundary trap assisted conduction, respectively. Transparent p-(CuCr1-xMgxO2)/n-(ZnO) heterojunction diodes showing rectifying current-voltage characteristics were fabricated.

  16. Mechanics of low-dimensional carbon nanostructures: Atomistic, continuum, and multi-scale approaches

    NASA Astrophysics Data System (ADS)

    Mahdavi, Arash

    nanotubes and carbon nanocones subject to different loadings and boundary conditions. This finite element technique is also used to study the natural frequencies of low-dimensional carbon nanostructures and comparing the results with those of a homogenized isotropic continuum shell. Conclusion is that, replacing the atomic lattice with an isotropic continuum shell for a graphene sheet does not significantly affect the vibration frequencies while in the case of carbon nanotubes and carbon nanocones there is a significant difference between the natural frequencies of the atomistic model and its continuum counterpart. In the case of the carbon nanotube, continuum model successfully captures the beam bending vibration modes while overestimating frequencies of the modes in which the cross-section undergoes significant deformation. Furthermore, in the case of carbon nanotubes, the continuum shell exhibits a torsional mode which appears to be an artifact resulting from the small nominal thickness typically used in the continuum shell approximation of these nanostructures. Results of this study indicate that isotropic continuum shell models, while simple and useful in static analysis, cannot accurately predict the vibration frequencies of these nanostructures. We have studied the bistable nature of single-walled carbon nanotubes by investigating the change in the tube's energy as it is compressed between flat rigid indenters of various widths. Assuming the nanotube deformed uniformly along its length and modeling the cross-section as an inextensible, non-linear beam we found that tubes with a radius greater than 12 A are bistable and that tubes with a radius greater than 25 A have a lower energy in the collapsed state than in the inflated state. The difference in energy between the collapsed and inflated states decreases nearly linearly with increasing tube radius. While the inflated state remains stable for tubes of all diameters, the energy barrier keeping the tube from

  17. Preservation of surface features on semiconductor surfaces

    SciTech Connect

    Wilt, D.P.

    1989-02-14

    A semiconductor laser is described comprising a Group III-V compound semiconductor body having a major surface, p1 an optical grating on the major surface, a protective coating on the grating, the coating including a transition metal, a Group III-V compound semiconductor heterostructure formed on the coating, the heterostructure having the shape of a mesa and including a Group III-V compound semiconductor active layer, a current-blocking Group III-V compound semiconductor structure laterally adjacent the mesa and effective to direct the primary flow of current through the mesa during operation of the laser, and means forming electrical contact to the laser.

  18. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  19. Understanding and Predicting Geomagnetic Dipole Reversals Via Low Dimensional Models and Data Assimilation

    NASA Astrophysics Data System (ADS)

    Morzfeld, M.; Fournier, A.; Hulot, G.

    2014-12-01

    We investigate the geophysical relevance of low-dimensional models of the geomagnetic dipole fieldby comparing these models to the signed relative paleomagnetic intensity over the past 2 Myr.The comparison is done via Bayesian statistics, implemented numerically by Monte Carlo (MC) sampling.We consider several MC schemes, as well as two data sets to show the robustness of our approach with respect to its numerical implementation and to the details of how the data are collected.The data we consider are the Sint-2000 [1] and PADM2M [2] data sets.We consider three stochastic differential equation (SDE) models and one deterministic model. Experiments with synthetic data show that it is feasible that a low dimensional modelcan learn the geophysical state from data of only the dipole field,and reveal the limitations of the low-dimensional models.For example, the G12 model [3] (a deterministic model that generates dipole reversals by crisis induced intermittency)can only match either one of the two important time scales we find in the data. The MC sampling approach also allows usto use the models to make predictions of the dipole field.We assess how reliably dipole reversals can be predictedwith our approach by hind-casting five reversals documented over the past 2 Myr. We find that, besides its limitations, G12 can be used to predict reversals reliably,however only with short lead times and over short horizons. The scalar SDE models on the other hand are not useful for prediction of dipole reversals.References Valet, J.P., Maynadier,L and Guyodo, Y., 2005, Geomagnetic field strength and reversal rate over the past 2 Million years, Nature, 435, 802-805. Ziegler, L.B., Constable, C.G., Johnson, C.L. and Tauxe, L., 2011, PADM2M: a penalized maximum likelihood model of the 0-2 Ma paleomagnetic axial dipole moment, Geophysical Journal International, 184, 1069-1089. Gissinger, C., 2012, A new deterministic model for chaotic reversals, European Physical Journal B, 85:137.

  20. Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

    NASA Astrophysics Data System (ADS)

    Liao, Xue-Yang; Zhang, Kai; Zeng, Chang; Zheng, Xue-Feng; En, Yun-Fei; Lai, Ping; Hao, Yue

    2014-05-01

    Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).

  1. A structurally-controllable spin filter in a δ-doped magnetically modulated semiconductor nanostructure with zero average magnetic field

    NASA Astrophysics Data System (ADS)

    Shen, Li-Hua; Ma, Wen-Yue; Zhang, Gui-Lian; Yang, Shi-Peng

    2015-07-01

    We report on a theoretical investigation of spin-polarized transport in a δ-doped magnetically modulated semiconductor nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe on the top of a semiconductor heterostructure and by using the atomic layer doping technique such as molecular beam epitaxy (MBE). It is shown that although such a nanostructure has a zero average magnetic filed, a sizable spin polarization exists due to the Zeeman splitting mechanism. It is also shown that the degree of spin polarization varies sensitively with the weight and/or position of the δ-doping. Therefore, one can conveniently tailor the behaviour of the spin-polarized electron by tuning the δ -doping, and such a device can be employed as a controllable spin filter for spintronics.

  2. High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures

    SciTech Connect

    Puzanov, A. S.; Obolenskiy, S. V. Kozlov, V. A.; Volkova, E. V.; Paveliev, D. G.

    2015-12-15

    The processes of the formation and stabilization of a radiation-induced defect cluster upon the arrival of a fast neutron to the space-charge region of a semiconductor diode are analyzed. The current pulse formed by secondary electrons is calculated and the spectrum of the signal generated by the diode (detector) under the action of an instantaneous neutron flux of the fission spectrum is determined. The possibility of experimental detection of the picosecond radiation-induced transition processes is discussed.

  3. Electronic Structure in Thin Film Organic Semiconductors Studied using Soft X-ray Emission and Resonant Inelastic X-ray Scattering

    SciTech Connect

    Zhang,Y.; Downes, J.; Wang, S.; Learmonth, T.; Plucinski, L.; Matsuura, A.; McGuinness, C.; Glans, P.; Bernardis, S.; et al.

    2006-01-01

    The electronic structure of thin films of the organic semiconductors copper and vanadyl (VO) phthalocyanine (Pc) has been measured using resonant soft X-ray emission spectroscopy and resonant inelastic X-ray scattering. For Cu-Pc we report the observation of two discrete states near E{sub F}. This differs from published photoemission results, but is in excellent agreement with density functional calculations. For VO-Pc, the vanadyl species is shown to be highly localized. Both dipole forbidden V 3d to V 3d*, and O 2p to V 3d* charge transfer transitions are observed, and explained in a local molecular orbital model.

  4. Electronic structure near the Fermi level in the ferromagnetic semiconductor GaMnAs studied by ultrafast time-resolved light-induced reflectivity measurements

    NASA Astrophysics Data System (ADS)

    Ishii, Tomoaki; Kawazoe, Tadashi; Hashimoto, Yusuke; Terada, Hiroshi; Muneta, Iriya; Ohtsu, Motoichi; Tanaka, Masaaki; Ohya, Shinobu

    2016-06-01

    Clarification of the electronic structure near the Fermi level is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor GaMnAs. Here, we perform ultrafast transient reflectivity spectra measurement, which is a powerful tool for selective detection of absorption edges in GaMnAs. The results show that the Fermi level of GaMnAs exists in the band gap. By using the Kramers-Kronig relation, we find the Mn-induced electronic states around the Fermi level, confirming that the ferromagnetism is stabilized by spin-polarized impurity-band holes.

  5. Semiconductor Cubing

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

  6. A low-dimensional approach to closed-loop control of a Mach 0.6 jet

    NASA Astrophysics Data System (ADS)

    Low, Kerwin R.; Berger, Zachary P.; Kostka, Stanislav; ElHadidi, Basman; Gogineni, Sivaram; Glauser, Mark N.

    2013-04-01

    Simultaneous time-resolved measurements of the near-field hydrodynamic pressure field, 2-component streamwise velocity field, and far-field acoustics are taken for an un-heated, axisymmetric Mach 0.6 jet in co-flow. Synthetic jet actuators placed around the periphery of the nozzle lip provide localized perturbations to the shear layer. The goal of this study was to develop an understanding of how the acoustic nature of the jet responds to unsteady shear layer excitation, and subsequently how this can be used to reduce the far-field noise. Review of the cross-correlations between the most energetic low-order spatial Fourier modes of the pressure and the far-field region reveals that mode 0 has a strong correlation and mode 1 has a weak correlation with the far-field. These modes are emulated with the synthetic jet array and used as drivers of the developing shear layer. In open loop forcing configurations, there is energy transfer among spatial scales, enhanced mixing, a reconfiguration of the low-dimensional spatial structure, and an increase in the overall sound pressure level (OASPL). In the closed loop configuration, changes to these quantities are more subtle but there is a reduction in the overall fluctuating sound pressure level OASPLf by 1.35 dB. It is argued that this reduction is correlated with the closed loop control feeding back the dynamical low-order information measured in the largest noise producing region.

  7. Terahertz Spectroscopy of Low-Dimensional Nanomaterials: Nonlinear Emission and Ultrafast Electrodynamics

    SciTech Connect

    Luo, Liang; Wang, Jigang

    2016-01-01

    Nonlinear and non-equilibrium properties of low-dimensional quantum materials are fundamental in nanoscale science yet transformative in nonlinear imaging/photonic technology today. These have been poorly addressed in many nano-materials despite of their well-established equilibrium optical and transport properties. The development of ultrafast terahertz (THz) sources and nonlinear spectroscopy tools facilitates understanding these issues and reveals a wide range of novel nonlinear and quantum phenomena that are not expected in bulk solids or atoms. In this paper, we discuss our recent discoveries in two model photonic and electronic nanostructures to solve two outstanding questions: (1) how to create nonlinear broadband terahertz emitters using deeply subwavelength nanoscale meta-atom resonators? (2) How to access one-dimensional (1D) dark excitons and their non-equilibrium correlated states in single-walled carbon nanotubes (SWMTs)?

  8. Hydrothermal Synthesis and Acetylene Sensing Properties of Variety Low Dimensional Zinc Oxide Nanostructures

    PubMed Central

    Chen, Weigen; Peng, Shudi; Zeng, Wen

    2014-01-01

    Various morphologies of low dimensional ZnO nanostructures, including spheres, rods, sheets, and wires, were successfully synthesized using a simple and facile hydrothermal method assisted with different surfactants. Zinc acetate dihydrate was chosen as the precursors of ZnO nanostructures. We found that polyethylene glycol (PEG), polyvinylpyrrolidone (PVP), glycine, and ethylene glycol (EG) play critical roles in the morphologies and microstructures of the synthesized nanostructures, and a series of possible growth processes were discussed in detail. Gas sensors were fabricated using screen-printing technology, and their sensing properties towards acetylene gas (C2H2), one of the most important arc discharge characteristic gases dissolved in oil-filled power equipments, were systematically measured. The ZnO nanowires based sensor exhibits excellent C2H2 sensing behaviors than those of ZnO nanosheets, nanorods, and nanospheres, indicating a feasible way to develop high-performance C2H2 gas sensor for practical application. PMID:24672324

  9. Dynamics of low dimensional model for weakly relativistic Zakharov equations for plasmas

    SciTech Connect

    Sahu, Biswajit; Pal, Barnali; Poria, Swarup; Roychoudhury, Rajkumar

    2013-05-15

    In the present paper, the nonlinear interaction between Langmuir waves and ion acoustic waves described by the one-dimensional Zakharov equations (ZEs) for relativistic plasmas are investigated formulating a low dimensional model. Equilibrium points of the model are found and it is shown that the existence and stability conditions of the equilibrium point depend on the relativistic parameter. Computational investigations are carried out to examine the effects of relativistic parameter and other plasma parameters on the dynamics of the model. Power spectrum analysis using fast fourier transform and also construction of first return map confirm that periodic, quasi-periodic, and chaotic type solution exist for both relativistic as well as in non-relativistic case. Existence of supercritical Hopf bifurcation is noted in the system for two critical plasmon numbers.

  10. Terahertz Spectroscopy of Low-Dimensional Nanomaterials: Nonlinear Emission and Ultrafast Electrodynamics

    DOE PAGESBeta

    Luo, Liang; Wang, Jigang

    2016-01-01

    Nonlinear and non-equilibrium properties of low-dimensional quantum materials are fundamental in nanoscale science yet transformative in nonlinear imaging/photonic technology today. These have been poorly addressed in many nano-materials despite of their well-established equilibrium optical and transport properties. The development of ultrafast terahertz (THz) sources and nonlinear spectroscopy tools facilitates understanding these issues and reveals a wide range of novel nonlinear and quantum phenomena that are not expected in bulk solids or atoms. In this paper, we discuss our recent discoveries in two model photonic and electronic nanostructures to solve two outstanding questions: (1) how to create nonlinear broadband terahertz emittersmore » using deeply subwavelength nanoscale meta-atom resonators? (2) How to access one-dimensional (1D) dark excitons and their non-equilibrium correlated states in single-walled carbon nanotubes (SWMTs)?« less

  11. Terahertz spectroscopy of low-dimensional nanomaterials: nonlinear emission and ultrafast electrodynamics

    NASA Astrophysics Data System (ADS)

    Luo, Liang; Wang, Jigang

    2015-08-01

    Nonlinear and non-equilibrium properties of low-dimensional quantum materials are fundamental in nanoscale science yet transformative in nonlinear imaging/photonic technology today. These have been poorly addressed in many nano-materials despite of their well-established equilibrium optical and transport properties. The development of ultrafast terahertz (THz) sources and nonlinear spectroscopy tools facilitates understanding these issues and reveals a wide range of novel nonlinear and quantum phenomena that are not expected in bulk solids or atoms. In this paper, we discuss our recent discoveries in two model photonic and electronic nanostructures to solve two outstanding questions: (1) how to create nonlinear broadband terahertz emitters using deeply subwavelength nanoscale meta-atom resonators? (2) How to access one-dimensional (1D) dark excitons and their non-equilibrium correlated states in single-walled carbon nanotubes (SWMTs)?

  12. Observation of correlated particle-hole pairs and string order in low-dimensional Mott insulators.

    PubMed

    Endres, M; Cheneau, M; Fukuhara, T; Weitenberg, C; Schauss, P; Gross, C; Mazza, L; Bañuls, M C; Pollet, L; Bloch, I; Kuhr, S

    2011-10-14

    Quantum phases of matter are characterized by the underlying correlations of the many-body system. Although this is typically captured by a local order parameter, it has been shown that a broad class of many-body systems possesses a hidden nonlocal order. In the case of bosonic Mott insulators, the ground state properties are governed by quantum fluctuations in the form of correlated particle-hole pairs that lead to the emergence of a nonlocal string order in one dimension. By using high-resolution imaging of low-dimensional quantum gases in an optical lattice, we directly detect these pairs with single-site and single-particle sensitivity and observe string order in the one-dimensional case. PMID:21998381

  13. Order parameter analysis for low-dimensional behaviors of coupled phase-oscillators

    PubMed Central

    Gao, Jian; Xu, Can; Sun, Yuting; Zheng, Zhigang

    2016-01-01

    Coupled phase-oscillators are important models related to synchronization. Recently, Ott-Antonsen(OA) ansatz is developed and used to get low-dimensional collective behaviors in coupled oscillator systems. In this paper, we develop a simple and concise approach based on equations of order parameters, namely, order parameter analysis, with which we point out that OA ansatz is rooted in the dynamical symmetry of order parameters. With our approach the scope of OA ansatz is identified as two conditions, i.e., the limit of infinitely many oscillators and only three nonzero Fourier coefficients of the coupling function. Coinciding with each of the conditions, a distinctive system out of the scope is taken into account and discussed with the order parameter analysis. Two approximation methods are introduced respectively, namely the expectation assumption and the dominating-term assumption. PMID:27443639

  14. Low-dimensional models for the nonlinear vibration analysis of cylindrical shells based on a perturbation procedure and proper orthogonal decomposition

    NASA Astrophysics Data System (ADS)

    Gonçalves, P. B.; Silva, F. M. A.; Del Prado, Z. J. G. N.

    2008-08-01

    In formulating mathematical models for dynamical systems, obtaining a high degree of qualitative correctness (i.e. predictive capability) may not be the only objective. The model must be useful for its intended application, and models of reduced complexity are attractive in many cases where time-consuming numerical procedures are required. This paper discusses the derivation of discrete low-dimensional models for the nonlinear vibration analysis of thin cylindrical shells. In order to understand the peculiarities inherent to this class of structural problems, the nonlinear vibrations and dynamic stability of a circular cylindrical shell subjected to static and dynamic loads are analyzed. This choice is based on the fact that cylindrical shells exhibit a highly nonlinear behavior under both static and dynamic loads. Geometric nonlinearities due to finite-amplitude shell motions are considered by using Donnell's nonlinear shallow-shell theory. A perturbation procedure, validated in previous studies, is used to derive a general expression for the nonlinear vibration modes and the discretized equations of motion are obtained by the Galerkin method using modal expansions for the displacements that satisfy all the relevant boundary and symmetry conditions. Next, the model is analyzed via the Karhunen-Loève expansion to investigate the relative importance of each mode obtained by the perturbation solution on the nonlinear response and total energy of the system. The responses of several low-dimensional models are compared. It is shown that rather low-dimensional but properly selected models can describe with good accuracy the response of the shell up to very large vibration amplitudes.

  15. Calculating Effect of Point Defects on Optical Absorption Spectra of III-V Semiconductor Superlattices Based on (8x8) k-dot-p Band Structures

    NASA Astrophysics Data System (ADS)

    Huang, Danhong; Iurov, Andrii; Gumbs, Godfrey; Cardimona, David; Krishna, Sanjay

    For a superlattice which is composed of layered zinc-blende structure III-V semiconductor materials, its realistic anisotropic band structures around the Gamma-point are calculated by using the (8x8)k-dot-p method with the inclusion of the self-consistent Hartree potential and the spin-orbit coupling. By including the many-body screening effect, the obtained band structures are further employed to calculate the optical absorption coefficient which is associated with the interband electron transitions. As a result of a reduced quasiparticle lifetime due to scattering with point defects in the system, the self-consistent vertex correction to the optical response function is also calculated with the help of the second-order Born approximation.

  16. K and Mn co-doped BaCd2As2: A hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance

    NASA Astrophysics Data System (ADS)

    Yang, Xiaojun; Li, Yuke; Zhang, Pan; Jiang, Hao; Luo, Yongkang; Chen, Qian; Feng, Chunmu; Cao, Chao; Dai, Jianhui; Tao, Qian; Cao, Guanghan; Xu, Zhu-An

    2013-12-01

    A bulk diluted magnetic semiconductor was found in the K and Mn co-doped BaCd2As2 system. Different from recently reported tetragonal ThCr2Si2-structured II-II-V based (Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2 system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming a honeycomb-like network. The Mn concentration reaches up to x ˜ 0.4. Magnetization measurements show that the samples undergo ferromagnetic transitions with Curie temperature up to 16 K. With low coercive field of less than 10 Oe and large magnetoresistance of about -70%, the hexagonal structured Ba1-yKyCd2-xMnxAs2 can be served as a promising candidate for spin manipulations.

  17. Probing Spin and Spin-Orbit Coupling effects in Narrow-gap Semiconductor Nano-structures by THz Magneto-photoresponse Spectroscopy and Magneto-transport Measurements

    NASA Astrophysics Data System (ADS)

    Pakmehr, Mehdi

    Using the spin degree of freedom in a emergent field Known as Spintronics has motivated scientist in different disciplines including physicist within last 10 years. Due to different interaction mechanisms which affects the physical behavior of spin (eg its state and transport properties) within solid medium (Semiconductors in our case), one needs to distinguish these mechanisms and their importance for making any practical spin based devices. For example the idea of making spin based transistors with electrons being transported within InGaAs and their spin state is being controlled by Rashba type field has been around for around 25 years but injection of spin polarized currents from a source into the channel has not been solved yet. Spin orbit coupling (SOC) is one of the mechanisms which changes the spin state of electrons and avoid the existence of pure spin state as a favorable one from device point of view. SOC could have a different origin depending on material type or structure of device. One method of measuring and quantifying this mechanisms within semiconductor nanostructures is through measuring the parameters known as Lande g-factor. This parameters turns out to be a promising one to probe different effects on electronic band structure including quantum confinement, strain, electric filed, etc. We probe a combination of these effects (SOC, Strain, band mixing, etc) by measuring different g-factor tensor components of narrow gap Zinc blend semiconductor nanostructures which we hope finally serve to the purpose of making reliable spin based devices* (Spintronics). To reach this goal we have developed and implemented THz magneto-Photoresponse spectroscopy in conjunction with magneto-transport measurements at cryogenic temperatures. The samples include InAs and HgTe based Quantum wells as well as InAs based quantum point contact. Our findings clarify the situation where the combination of SOC, Strain, quantum confinements as well as many body electron effect

  18. Wide band gap semiconductor templates

    SciTech Connect

    Arendt, Paul N.; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F.; Usov, Igor O.

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  19. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  20. Composite Semiconductor Substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar; Radhakrishnan, Gouri; Katz, Joseph; Koliwad, Kris

    1989-01-01

    Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.