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Sample records for low-noise mmic amplifiers

  1. Cryogenic MMIC Low Noise Amplifiers

    NASA Technical Reports Server (NTRS)

    Weinreb, S.; Gaier, T.; Fernandez, J.; Erickson, N.; Wielgus, J.

    2000-01-01

    Monolithic (MMIC) and discrete transistor (MIC) low noise amplifiers are compared on the basis of performance, cost, and reliability. The need for cryogenic LNA's for future large microwave arrays for radio astronomy is briefly discussed and data is presented on a prototype LNA for the 1 to 10 GZH range along with a very wideband LNA for the 1 to 60 GHz range.

  2. Low-Noise MMIC Amplifiers for 120 to 180 GHz

    NASA Technical Reports Server (NTRS)

    Pukala, David; Samoska, Lorene; Peralta, Alejandro; Bayuk, Brian; Grundbacher, Ron; Oliver, Patricia; Cavus, Abdullah; Liu, Po-Hsin

    2009-01-01

    Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background radiation. There are also potential uses for such LNAs in electronic test equipment, passive millimeter- wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The main advantage afforded by these MMIC LNAs, relative to prior MMIC LNAs, is that their coverage of the 120-to-180-GHz frequency band makes them suitable for reuse in a wider variety of applications without need to redesign them. Each of these MMIC amplifiers includes InP transistors and coplanar waveguide circuitry on a 50- mthick chip (see Figure 1). Coplanar waveguide transmission lines are used for both applying DC bias and matching of input and output impedances of each transistor stage. Via holes are incorporated between top and bottom ground planes to suppress propagation of electromagnetic modes in the substrate. On the basis of computational simulations, each of these amplifiers was expected to operate with a small-signal gain of 14 dB and a noise figure of 4.3 dB. At the time of writing this article, measurements of noise figures had not been reported, but on-chip measurements had shown gains approaching their simulated values (see Figure 2).

  3. W-band InP based HEMT MMIC low noise amplifiers

    NASA Technical Reports Server (NTRS)

    Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.

    2002-01-01

    This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

  4. Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz

    NASA Technical Reports Server (NTRS)

    Gaier, Todd; Samoska, Lorene; Fung, King Man; Deal, William; Mei, Xiaobing; Lai, Richard

    2009-01-01

    A document presents data from tests of a low-noise amplifier module operating in the frequency range from 290 to 340 GHz said to be the highest-frequency low-noise, solid-state amplifier ever developed. The module comprised a three-stage monolithic microwave integrated circuit (MMIC) amplifier integrated with radial probe MMIC/waveguide transitions and contained in a compact waveguide package, all according to the concepts described in the immediately preceding article and in the referenced prior article, "Integrated Radial Probe Transition From MMIC to Waveguide" (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. The tests included measurements by the Y-factor method, in which noise figures are measured repeatedly with an input noise source alternating between an "on" (hot-load) condition and an "off" (cold-load) condition. (The Y factor is defined as the ratio between the "on" and "off" noise power levels.) The test results showed that, among other things, the module exhibited a minimum noise figure of about 8.7 dB at 325 GHz and that the gain at that frequency under the bias conditions that produced the minimum noise figure was between about 9 and 10 dB.

  5. Recent Advances In Cryogenic Monolithic Millimeter-wave Integrated Circuit (MMIC) Low Noise Amplifiers For Astrophysical Observations

    NASA Astrophysics Data System (ADS)

    Samoska, Lorene; Church, S.; Cleary, K.; Gaier, T.; Gawande, R.; Kangaslahti, P.; Lawrence, C.; Readhead, A.; Reeves, R.; Seiffert, M.; Sieth, M.; Varonen, M.; Voll, P.

    2012-05-01

    In this work, we discuss advances in high electron mobility transistor (HEMT) low noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) for use as front end amplifiers in ultra-low noise receivers. Applications include focal plane arrays for studying the polarization of the cosmic microwave background radiation and foreground separation, receiver arrays for molecular spectroscopy, and high redshift CO surveys for probing the epoch of reionization. Recent results and a summary of best indium phosphide (InP) low noise amplifier data will be presented. Cryogenic MMIC LNAs using state-of-the-art InP technology have achieved record performance, and have advantages over other detectors in the 30-300 GHz range. InP MMIC LNAs operate at room temperature and may achieve near-optimum performance at 20K, a temperature readily achieved with modern cryo-coolers. In addition, wide-bandwidth LNAs are suitable for heterodyne applications as well as direct detector applications. Recent results include Ka-band MMICs with 15K noise temperature performance, and Q-Band MMICs with on-wafer measured cryogenic noise of 12K at 38 GHz. In addition, W-Band amplifiers with 25K noise temperature at 95 GHz will be presented, as well as wide-band LNAs with noise temperature below 45K up to 116 GHz. At higher frequencies, we will discuss progress on MMIC LNAs and receiver modules in G-Band (140-220 GHz), where our group has achieved less than 60K receiver noise temperature at 166 GHz. We will address extending the high performance of these MMIC LNAs to even higher frequencies for spectroscopic surveys, and make projections on future performance given current trends. These MMIC amplifiers can play a key role in future ground-based and space-based instruments for astrophysical observations.

  6. GaAs FET MMIC low-noise amplifiers for satellite communications

    NASA Astrophysics Data System (ADS)

    Hung, H.-L.; Enobakhare, E.; Abita, J.; McNally, P.; Mahle, C.

    1985-12-01

    One- and two-stage, X-band, low-noise, GaAs FET monolithic amplifier modules have been developed. These amplifier chips include all dc-blocking capacitors and bias networks. A cascaded, two-chip, two-stage amplifier module provides a noise figure of 4 dB and an associated gain of 30 dB from 9.5 to 11.7 GHz. A two-stage 15-dB gain block has also been developed for 9 to 13 GHz, with a chip size of 1.7 x 1.2 mm.

  7. Cryogenic 36-45 GHz InP Low-Noise Amplifier MMIC's with Improved Noise Temperature by Eliminating Parasitic Parallel-Plate Modes

    NASA Astrophysics Data System (ADS)

    Nakano, Hiroshi; Shimizu, Takashi; Ohno, Takeshi; Hirachi, Yasutake; Kawaguchi, Noriyuki

    2012-08-01

    This paper describes cryogenic 36-45 GHz InP low-noise amplifier monolithic microwave integrated circuits (MMIC's) with an improved noise temperature by eliminating parasitic parallel-plate resonance modes. These MMIC's are used for a Radio Astronomical receiver, which needs the ultimate super low-noise and wide-band frequency characteristics, such as those in ALMA Band 1. The MMIC chips were designed in the coplanar waveguide (CPW), and mounted to the AlN substrate with a flip-chip assembly, which was promising compared to wire bonding. The flip-chip assemblies, however, are prone to cause the parasitic parallel plate resonance mode (PPM). The relationship between the S-parameters and the PPM was investigated by using a 3D-electromagnetic simulation of the simple transmission-line test-chip with the same chip size as that of the actual MMIC. In order to eliminate the PPM, additional bumps were mounted on the simple transmission-line test-chip, and the effect of these bumps was confirmed by the simulation. These results obtained from the simple transmission-line test-chip were applied to an actual MMIC chip assembly. The MMIC assembled with the additional bumps had no abnormality in the measured S-parameters, and the PPM had been eliminated up to 65 GHz. Moreover, the stability factor, K, became more than 2.4 over 36-45 GHz. This InP low-noise amplifier MMIC exhibited a gain of 15 dB and a noise temperature of 180-240 K at room temperature in the frequency range of 36-45 GHz. When cooled to 28 K, a gain of 17 dB and a noise temperature of 22-35 K were obtained at a power consumption of 4.7 mW over 36-45 GHz. A high-gain amplifier module consisting of two cascaded chips, exhibited a gain of 27-30 dB and a noise temperature of 25-30 K at the ambient temperature of 22 K in the frequency range of 41-45 GHz.

  8. Advances In Cryogenic Monolithic Millimeter-wave Integrated Circuit (MMIC) Low Noise Amplifiers For CO Intensity Mapping and ALMA Band 2

    NASA Astrophysics Data System (ADS)

    Samoska, Lorene; Cleary, Kieran; Church, Sarah E.; Cuadrado-Calle, David; Fung, Andy; gaier, todd; gawande, rohit; Kangaslahti, Pekka; Lai, Richard; Lawrence, Charles R.; Readhead, Anthony C. S.; Sarkozy, Stephen; Seiffert, Michael D.; Sieth, Matthew

    2016-01-01

    We will present results of the latest InP HEMT MMIC low noise amplifiers in the 30-300 GHz range, with emphasis on LNAs and mixers developed for CO intensity mapping in the 40-80 GHz range, as well as MMIC LNAs suitable for ALMA Band 2 (67-90 GHz). The LNAs have been developed together with NGC in a 35 nm InP HEMT MMIC process. Recent results and a summary of best InP low noise amplifier data will be presented. This work describes technologies related to the detection and study of highly redshifted spectral lines from the CO molecule, a key tracer for molecular hydrogen. One of the most promising techniques for observing the Cosmic Dawn is intensity mapping of spectral-spatial fluctuations of line emission from neutral hydrogen (H I), CO, and [C II]. The essential idea is that instead of trying to detect line emission from individual galaxies, one measures the total line emission from a number of galaxies within the volume defined by a spectral-spatial pixel. Fluctuations from pixel to pixel trace large scale structure, and the evolution with redshift is revealed as a function of receiver frequency. A special feature of CO is the existence of multiple lines with a well-defined frequency relationship from the rotational ladder, which allows the possibility of cleanly separating the signal from other lines or foreground structure at other redshifts. Making use of this feature (not available to either HI or [C II] measurements) requires observing multiple frequencies, including the range 40-80 GHz, much of which is inaccessible from the ground or balloons.Specifically, the J=1->0 transition frequency is 115 GHz; J=2->1 is 230 GHz; J=3->2 is 345 GHz, etc. At redshift 7, these lines would appear at 14.4, 28.8, and 43.2 GHz, accessible from the ground. Over a wider range of redshifts, from 3 to 7, these lines would appear at frequencies from 14 to 86 GHz. A ground-based CO Intensity mapping experiment, COMAP, will utilize InP-based HEMT MMIC amplifier front ends in the

  9. Low noise tuned amplifier

    NASA Technical Reports Server (NTRS)

    Kleinberg, L. L. (Inventor)

    1984-01-01

    A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

  10. Ultra-Low-Noise W-Band MMIC Detector Modules

    NASA Technical Reports Server (NTRS)

    Gaier, Todd C.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Van Vinkle, Dan; Tantawi, Sami; Fox, John; Church, Sarah E.; Lau, Jusy M.; Sieth, Matthew M.; Voll, Patricia E.; Bryerton, Eric

    2010-01-01

    A monolithic microwave integrated circuit (MMIC) receiver can be used as a building block for next-generation radio astronomy instruments that are scalable to hundreds or thousands of pixels. W-band (75-110 GHz) low-noise receivers are needed for radio astronomy interferometers and spectrometers, and can be used in missile radar and security imagers. These receivers need to be designed to be mass-producible to increase the sensitivity of the instrument. This innovation is a prototyped single-sideband MMIC receiver that has all the receiver front-end functionality in one small and planar module. The planar module is easy to assemble in volume and does not require tuning of individual receivers. This makes this design low-cost in large volumes.

  11. Low-Noise Band-Pass Amplifier

    NASA Technical Reports Server (NTRS)

    Kleinberg, L.

    1982-01-01

    Circuit uses standard components to overcome common limitation of JFET amplifiers. Low-noise band-pass amplifier employs JFET and operational amplifier. High gain and band-pass characteristics are achieved with suitable choice of resistances and capacitances. Circuit should find use as low-noise amplifier, for example as first stage instrumentation systems.

  12. Cooled Low-Noise HEMT Microwave Amplifiers

    NASA Technical Reports Server (NTRS)

    Bautista, J. Javier; Ortiz, Gerardo G.; Duh, Kuanghann George

    1992-01-01

    Prototype cooled low-noise microwave amplifiers based on high-electron-mobility transistors (HEMT's) considered as replacements for cooled ruby masers used as low-noise receiver-front-end amplifiers in communications, radio science, radar systems, radio astronomy, and telemetry. HEMT amplifier operates at 12 K, requires less cooling power and operates at lower cost with simpler, more-reliable cooling system.

  13. Low Noise Amplifiers and Receivers for Remote Sensing

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Lim, Boon; Gaier, Todd; Tanner, Alan; Varonen, Mikko; Samoska, Lorene; Brown, Shannon; Lambrigtsen, Bjorn; Reising, Steven; Tanabe, Jordan; Montes, Oliver; Dawson, Douglas; Parashare, Chaitali

    2011-01-01

    The study of atmospheric dynamics and climatology depend on accurate and frequent measurements of temperature and humidity profiles of the atmosphere. These measurements furthermore enable highly accurate measurements of ocean topography by providing total column water vapour data for radar path delay correction. The atmospheric temperature profile is characterised at the oxygen molecule absorption frequencies (60 and 118 GHz) and the humidity profile at the water molecule absorption frequencies (23 and 183 GHz). Total column measurements can be achieved by comparing measured radiometric temperatures at atmospheric window channels, such as 90, 130 and 166 GHz. The standard receiver technology for these frequencies was diode mixers with MMIC LNAs being applied at the lower frequencies. The sensitivity of millimetre wave receivers improved significantly with the introduction of the low noise 35 nm gate length InP MMIC amplifiers. We currently achieve 3 dB noise figure at 180 GHz and 2 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.

  14. Low Noise Amplifiers and Receivers for Remote Sensing

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Lim, Boon; Gaier, Todd; Tanner, Alan; Varonen, Mikko; Samoska, Lorene; Brown, Shannon; Lambrigsten, Bjorn; Reising, Steven; Tanabe, Jordan; Montes, Oliver; Dawson, Douglas; Parashare, Chaitali

    2012-01-01

    The study of atmospheric dynamics and climatology depend on accurate and frequent measurements of temperature and humidity profiles of the atmosphere. These measurements furthermore enable highly accurate measurements of ocean topography by providing total column water vapour data for radar path delay correction. The atmospheric temperature profile is characterized at the oxygen molecule absorption frequencies (60 and 118 GHz) and the humidity profile at the water molecule absorption frequencies (23 and 183 GHz). Total column measurements can be achieved by comparing measured radiometric temperatures at atmospheric window channels, such as 90, 130, and 166 GHz. The standard receiver technology for these frequencies was diode mixers with MMIC LNAs being applied at the lower frequencies. The sensitivity of millimeter wave receivers improved significantly with the introduction of the low noise 35 nm gate length InP MMIC amplifiers. We currently achieve 3 dB noise figure at 180 GHz and 2 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurements campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography alitmetery.

  15. European low-noise MMIC technologies for cryogenic millimetre wave radio astronomical applications

    NASA Astrophysics Data System (ADS)

    Cremonini, Andrea; Mariotti, Sergio; Valenziano, Luca

    2012-09-01

    The Low Noise technology has a paramount relevance on radiotelescopes and radiometers performances. Its influence on sensitivity and temporal stability has a deep impact on obtainable scientific results. As well known, front end active part of scientific instruments are cryocooled in order to drastically reduce the intrinsic thermal noise generated by its electronic parts and consequently increase the sensitivity. In this paper we will describe the obtained results by an Italian Space Agency funded activity. The aim is to validate European MMIC Low Noise technologies and designs for cryogenic environments in the range of millimetre wave. As active device, HEMT (High Electron Mobility Transistor) are considered the best device for high frequency and low noise cryo applications. But not all the semiconductor foundry process are suitable for applications in such environment. Two European Foundries has been selected and two different HEMT based Low Noise Amplifiers have been designed and produced. The main goal of this activity is identify an European technology basement for space and ground based low noise cryogenic applications. Designs, layout, architectures, foundry processes and results will be compared.

  16. Low-noise amplifiers for satellite communications

    NASA Astrophysics Data System (ADS)

    Whelehan, J.

    1984-02-01

    It is pointed out that over the past several years significant advances have been made in the overall capability of both microwave and mm-wave receivers. This is particularly apparent in the telecom market. Integral parts of advanced receiver technology are low-noise receivers. The advances currently being achieved in low-noise technology are partly based on developments in GaAs semiconductor technology. The development of high-cutoff-frequency beam lead mixer diodes has led to the development of mm-wave low-noise mixers with excellent low-noise capability. The advanced techniques are now being employed in field-deployable systems. Low noise is an important factor in satellite communications applications. Attention is given to C-band fixed satellite service, C-band parametric amplifiers, C-band FET, and X band, the Ku band, and the 30/20 GHz band.

  17. Low Noise Amplifier Receivers from Millimeter Wave Atmospheric Remote Sensing

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Lim, Boon; Gaier, Todd; Tanner, Alan; Varonen, Mikko; Samoska, Lorene; Brown, Shannon; Lambrigsten, Bjorn; Reising, Steven; Tanabe, Jordan; Montes, Oliver; Dawson, Douglas; Parashare, Chaitali

    2012-01-01

    We currently achieve 3.4 dB noise figure at 183GHz and 2.1 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.

  18. Ku-band GaAs MMIC commercial satellite receiver and driver amplifier

    NASA Astrophysics Data System (ADS)

    Butte, E. G.

    1992-03-01

    The development of key MMIC circuit elements and unit design approaches that have influenced the size and weight of commercial satellite Ku-band receiver and driver amplifier units are described. Techniques exhibiting equal or superior RF performance compared to existing microwave IC hardware while reducing manufacturing costs are identified. The mask set for four Ku-band HMET low-noise amplifier (LNA) designs with simulated gain from 20 to 30 dB and noise figure at 1.1 dB from 14.0 to 14.5 GHz has been developed. An MMIC double-balanced mixer with 9 dB conversion loss was simulated with 7 dBm local oscillator drive level. Detailed Ku-band downconverter receiver subsystem and driver amplifier design trades have been performed using the MMIC InGaAs HEMT LNA, MMIC MESFET GaAs mixer, and existing MMIC MESFET GaAs amplifiers.

  19. Ku band low noise parametric amplifier

    NASA Technical Reports Server (NTRS)

    1976-01-01

    A low noise, K sub u-band, parametric amplifier (paramp) was developed. The unit is a spacecraft-qualifiable, prototype, parametric amplifier for eventual application in the shuttle orbiter. The amplifier was required to have a noise temperature of less than 150 K. A noise temperature of less than 120 K at a gain level of 17 db was achieved. A 3-db bandwidth in excess of 350 MHz was attained, while deviation from phase linearity of about + or - 1 degree over 50 MHz was achieved. The paramp operates within specification over an ambient temperature range of -5 C to +50 C. The performance requirements and the operation of the K sub u-band parametric amplifier system are described. The final test results are also given.

  20. Low-Noise Amplifier for 100 to 180 GHz

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Pukala, David; Fung, King Man; Gaier, Todd; Mei, Xiaobing; Lai, Richard; Deal, William

    2009-01-01

    A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art.

  1. A Low-Noise Semiconductor Optical Amplifier

    SciTech Connect

    Ratowsky, R.P.; Dijaili, S.; Kallman, J.S.; Feit, M.D.; Walker, J.

    1999-03-23

    Optical amplifiers are essential devices for optical networks, optical systems, and computer communications. These amplifiers compensate for the inevitable optical loss in long-distance propagation (>50 km) or splitting (>10x). Fiber amplifiers such as the erbium-doped fiber amplifier have revolutionized the fiber-optics industry and are enjoying widespread use. Semiconductor optical amplifiers (SOAs) are an alternative technology that complements the fiber amplifiers in cost and performance. One obstacle to the widespread use of SOAs is the severity of the inevitable noise output resulting from amplified spontaneous emission (ASE). Spectral filtering is often used to reduce ASE noise, but this constrains the source spectrally, and improvement is typically limited to about 10 dB. The extra components also add cost and complexity to the final assembly. The goal of this project was to analyze, design, and take significant steps toward the realization of an innovative, low-noise SOA based on the concept of ''distributed spatial filtering'' (DSF). In DSF, we alternate active SOA segments with passive free-space diffraction regions. Since spontaneous emission radiates equally in all directions, the free-space region lengthens the amplifier for a given length of gain region, narrowing the solid angle into which the spontaneous emission is amplified [1,2]. Our innovation is to use spatial filtering in a differential manner across many segments, thereby enhancing the effect when wave-optical effects are included [3]. The structure quickly and effectively strips the ASE into the higher-order modes, quenching the ASE gain relative to the signal.

  2. MMIC Amplifiers for 90 to 130 GHz

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Pukala, David; Peralta, Alejandro; Bryerton, Eric; Morgan, Matt; Boyd, T.; Hu, Ming; Schmitz, Adele

    2007-01-01

    This brief describes two monolithic microwave integrated-circuit (MMIC) amplifier chips optimized to function in the frequency range of 90 to 130 GHz, covering nearly all of F-band (90 - 140 GHz). These amplifiers were designed specifically for local-oscillator units in astronomical radio telescopes such as the Atacama Large Millimeter Array (ALMA). They could also be readily adapted for use in electronic test equipment, automotive radar systems, and communications systems that operate between 90 and 130 GHz.

  3. Reflected-wave maser. [low noise amplifier

    NASA Technical Reports Server (NTRS)

    Clauss, R. C. (Inventor)

    1976-01-01

    A number of traveling-wave, slow-wave maser structures, containing active maser material but absent the typical ferrite isolators, are immersed in a nonuniform magnetic field. The microwave signal to be amplified is inserted at a circulator which directs the signal to a slow-wave structure. The signal travels through the slow-wave structure, being amplified according to the distance traveled. The end of the slow-wave structure farthest from the circulator is arranged to be a point of maximum reflection of the signal traveling through the slow-wave structure. As a consequence, the signal to be amplified traverses the slow-wave structure again, in the opposite direction (towards the circulator) experiencing amplification equivalent to that achieved by a conventional traveling-wave maser having twice the length. The circulator directs the amplified signal to following like stages of amplification. Isolators are used in between stages to prevent signals from traveling in the wrong direction, between the stages. Reduced signal loss is experienced at each stage. The high gain produced by each slow-wave structure is reduced to a moderate value by use of a nonuniform magnetic field which also broadens the line width of the maser material. The resulting bandwidth can be exceptionally wide. Cascaded stages provide high gain, exceptionally wide bandwith and very low noise temperature.

  4. 17 GHz low noise GaAs FET amplifier

    NASA Astrophysics Data System (ADS)

    Bharj, J. S.

    1984-10-01

    The considered amplifier is suitable for use as the first stage in a direct broadcast TV satellite receiver, and it was specifically designed for the Unisat spacecraft. Attention is given to RF device characterization, the design of the low-noise FET amplifier, the very significant dispersion effects at 17 GHz, the noise figure, and questions of DC bias. Balanced stages are used for low-noise and high-gain amplifiers to enhance the reliability. The noise figure of the amplifier is approximately 3.75 dB in the frequency band of interest. A low-noise microstrip GaAs FET amplifier circuit is shown.

  5. Towards Terahertz MMIC Amplifiers: Present Status and Trends

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene

    2006-01-01

    This viewgraph presentation surveys the fastest Monolithic Millimeter-wave Integrated Circuit (MMIC) amplifiers to date; summarize previous solid state power amp results to date; reviews examples of MMICs, reviews Power vs. Gate periphery and frequency; Summarizes previous LNA results to date; reviews Noise figure results and trends toward higher frequency

  6. Matched wideband low-noise amplifiers for radio astronomy.

    PubMed

    Weinreb, S; Bardin, J; Mani, H; Jones, G

    2009-04-01

    Two packaged low noise amplifiers for the 0.3-4 GHz frequency range are described. The amplifiers can be operated at temperatures of 300-4 K and achieve noise temperatures in the 5 K range (<0.1 dB noise figure) at 15 K physical temperature. One amplifier utilizes commercially available, plastic-packaged SiGe transistors for first and second stages; the second amplifier is identical except it utilizes an experimental chip transistor as the first stage. Both amplifiers use resistive feedback to provide input reflection coefficient S11<-10 dB over a decade bandwidth with gain over 30 dB. The amplifiers can be used as rf amplifiers in very low noise radio astronomy systems or as i.f. amplifiers following superconducting mixers operating in the millimeter and submillimeter frequency range. PMID:19405681

  7. External Peltier Cooler For Low-Noise Amplifier

    NASA Technical Reports Server (NTRS)

    Soper, Terry A.

    1990-01-01

    Inexpensive Peltier-effect cooling module made of few commercially available parts used to reduce thermal noise in microwave amplifier. Retrofitted to almost any microwave low-noise amplifier or receiver preamplifier used in communication, telemetry, or radar. Includes copper or aluminum cold plate held tightly against unit to be cooled by strap-type worm-gear clamps.

  8. Tailoring HEMTs for low-noise amplifier designs

    NASA Astrophysics Data System (ADS)

    Jabra, A. A.; Smith, P. M.; Chao, P. C.; Baccarini, M.

    1988-10-01

    A Ku-band low-noise amplifier (LNA) for use in a multiple-access communication network such as that required by the Space Station is described. The unit uses high-electron-mobility transistors (HEMTs) to achieve 1.5-dB noise figure and 30-dB gain over its 13.4-13.8 GHz design bandwidth. HEMT technology is discussed as well as Ku-band amplifier design and amplifier performance.

  9. Cryogenic ultra-low-noise SiGe transistor amplifier.

    PubMed

    Ivanov, B I; Trgala, M; Grajcar, M; Il'ichev, E; Meyer, H-G

    2011-10-01

    An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers. PMID:22047315

  10. Update on Waveguide-Embedded Differential MMIC Amplifiers

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Schleht, Erich

    2010-01-01

    There is an update on the subject matter of Differential InP HEMT MMIC Amplifiers Embedded in Waveguides (NPO-42857) NASA Tech Briefs, Vol. 33, No. 9 (September 2009), page 35. To recapitulate: Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The MMICs are designed integrally with, and embedded in, waveguide packages. The instant work does not mention InP HEMTs but otherwise reiterates part of the subject matter of the cited prior article, with emphasis on the following salient points: An MMIC is mounted in the electric-field plane ("E-plane") of a waveguide and includes a finline transition to each differential-amplifier stage. The differential configuration creates a virtual ground within each pair of transistor-gate fingers, eliminating the need for external radio-frequency grounding. This work concludes by describing a single-stage differential submillimeter-wave amplifier packaged in a rectangular waveguide and summarizing results of tests of this amplifier at frequencies of 220 and 305 GHz.

  11. A low-noise Peltier-cooled FET amplifier

    NASA Astrophysics Data System (ADS)

    Askew, R. E.; Wolkstein, H. J.

    1981-12-01

    A description is presented of a Peltier-cooled GaAs FET amplifier designed expressly to replace the complex and expensive parametric amplifier for satellite downlink receivers. The FET amplifier operates with an effective noise temperature (noise figure) at the terminal of less than 160 K (1.9 dB) and has an overall receiver gain of greater than 40 dB over the 7.25 to 7.75 GHz band. Attention is given to the developmental approach, aspects of electrical design, thermal considerations, packaging problems, the power supplies, and questions of cooler control. An investigation demonstrated the feasibility of replacing a parametric amplifier with a Peltier-cooled, low-noise FET amplifier for mast head operation in the 7.25-7.75 GHz band.

  12. MMIC HEMT Power Amplifier for 140 to 170 GHz

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Radisic, Vesna; Ngo, Catherine; Janke, Paul; Hu, Ming; Micovic, Miro

    2003-01-01

    A three-stage monolithic microwave integrated circuit (MMIC) power amplifier that features high-electron-mobility transistors (HEMTs) as gain elements is reviewed. This amplifier is designed to operate in the frequency range of 140 to 170 GHz, which contains spectral lines of several atmospheric molecular species plus subharmonics of other such spectral lines. Hence, this amplifier could serve as a prototype of amplifiers to be incorporated into heterodyne radiometers used in atmospheric science. The original intended purpose served by this amplifier is to boost the signal generated by a previously developed 164-GHz MMIC HEMT doubler and drive a 164-to-328-GHz doubler to provide a few milliwatts of power at 328 GHz.

  13. X-Band Ultra-Low Noise Maser Amplifier Performance

    NASA Technical Reports Server (NTRS)

    Glass, G.; Johnson, D.; Ortiz, G.

    1993-01-01

    Noise temperature measurements of an 8440 MHz ultra-low noise maser amplifier (ULNA) have been performed at sub-atmospheric, liquid helium temperatures. The traveling wave maser operated while immersed in a liquid helium bath. The lowest input noise temperature measured was 1.23 plus or minus 0.16 K at a physical temperature of 1.60 kelvin. At this physical temperature the observed gain per unit length of ruby was 4.6 dB/cm, and the amplifier had a 3 dB-bandwidth of 76 MHz.

  14. Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor

    NASA Astrophysics Data System (ADS)

    McCulloch, Mark A.; Melhuish, Simon J.; Piccirillo, Lucio

    2015-01-01

    An approach to enhancing the noise performance of an InP monolithic microwave integrated circuit (MMIC)-based low noise amplifiers (LNA) through the use of a discrete 100-nm gate length InP high electron mobility transistor is outlined. This LNA, known as a transistor in front of MMIC (T + MMIC) LNA, possesses a gain in excess of 40 dB and an average noise temperature of 9.4 K across the band 27 to 33 GHz at a physical temperature of 8 K. This compares favorably with 14.5 K for an LNA containing an equivalent MMIC. A simple advanced design system model offering further insights into the operation of the LNA is also presented and the LNA is compared with the current state-of-the-art Planck LFI LNAs.

  15. Compact, Single-Stage MMIC InP HEMT Amplifier

    NASA Technical Reports Server (NTRS)

    Pukala, David; Samoska, Lorene; Fung, King Man; Gaier, Todd; Deal, W. R.; Mei, Gerry; Radisic, Vesna; Lai, Richard

    2008-01-01

    A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.

  16. Cross-talk free, low-noise optical amplifier

    DOEpatents

    Dijaili, S.P.; Patterson, F.G.; Deri, R.J.

    1995-07-25

    A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier. 11 figs.

  17. Cross-talk free, low-noise optical amplifier

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Deri, Robert J.

    1995-01-01

    A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier.

  18. Two-Stage, 90-GHz, Low-Noise Amplifier

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene A.; Gaier, Todd C.; Xenos, Stephanie; Soria, Mary M.; Kangaslahti, Pekka P.; Cleary, Kieran A.; Ferreira, Linda; Lai, Richard; Mei, Xiaobing

    2010-01-01

    A device has been developed for coherent detection of the polarization of the cosmic microwave background (CMB). A two-stage amplifier has been designed that covers 75-110 GHz. The device uses the emerging 35-nm InP HEMT technology recently developed at Northrop Grumman Corporation primarily for use at higher frequencies. The amplifier has more than 18 dB gain and less than 35 K noise figure across the band. These devices have noise less than 30 K at 100 GHz. The development started with design activities at JPL, as well as characterization of multichip modules using existing InP. Following processing, a test campaign was carried out using single-chip modules at 100 GHz. Successful development of the chips will lead to development of multichip modules, with simultaneous Q and U Stokes parameter detection. This MMIC (monolithic microwave integrated circuit) amplifier takes advantage of performance improvements intended for higher frequencies, but in this innovation are applied at 90 GHz. The large amount of available gain ultimately leads to lower possible noise performance at 90 GHz.

  19. Thermal design of a thermoelectrically cooled low-noise amplifier

    NASA Astrophysics Data System (ADS)

    Hyman, N. L.; Hung, H.-L.

    1981-06-01

    The development of a thermoelectrically cooled low-noise amplifier is described in terms of thermal design concepts, optimization procedures, supporting analyses, and examples of measured performance. The design objectives achieved include a compact, low-cost small overall package size (19 x 19 x 28 cm) with a heat exchanger and fan capable of maintaining at room temperature ambient the preamplifier unit of an earth station low-noise amplifier at -90 C. The size of the unit measures 1.0 x 1.8 x 8.4 cm and has a heat dissipation of 150 mW. A low system component production cost was maintained, and a high reliability from a solid-state TEHP and a gas-filled hermetically sealed container guaranteed. An inexpensive and effective insulation system was developed, based on perlite powder-krypton gas and thermal shielding, and a flexible heat conductor for strain relief was built. It is concluded that the design principles are applicable to other electronic and optical components to maintain temperatures as low as -100 C.

  20. MMIC DHBT Common-Base Amplifier for 172 GHz

    NASA Technical Reports Server (NTRS)

    Paidi, Vamsi; Griffith, Zack; Wei, Yun; Dahlstrom, Mttias; Urteaga, Miguel; Rodwell, Mark; Samoska, Lorene; Fung, King Man; Schlecht, Erich

    2006-01-01

    Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this

  1. Multiple Differential-Amplifier MMICs Embedded in Waveguides

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Schlecht, Erich

    2010-01-01

    Compact amplifier assemblies of a type now being developed for operation at frequencies of hundreds of gigahertz comprise multiple amplifier units in parallel arrangements to increase power and/or cascade arrangements to increase gains. Each amplifier unit is a monolithic microwave integrated circuit (MMIC) implementation of a pair of amplifiers in differential (in contradistinction to single-ended) configuration. Heretofore, in cascading amplifiers to increase gain, it has been common practice to interconnect the amplifiers by use of wires and/or thin films on substrates. This practice has not yielded satisfactory results at frequencies greater than 200 Hz, in each case, for either or both of two reasons: Wire bonds introduce large discontinuities. Because the interconnections are typically tens of wavelengths long, any impedance mismatches give rise to ripples in the gain-vs.-frequency response, which degrade the performance of the cascade.

  2. Three-Stage InP Submillimeter-Wave MMIC Amplifier

    NASA Technical Reports Server (NTRS)

    Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

    2008-01-01

    A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

  3. Special Component Designs for Differential-Amplifier MMICs

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka

    2010-01-01

    Special designs of two types of electronic components transistors and transmission lines have been conceived to optimize the performances of these components as parts of waveguide-embedded differential-amplifier monolithic microwave integrated circuits (MMICs) of the type described in the immediately preceding article. These designs address the following two issues, the combination of which is unique to these particular MMICs: Each MMIC includes a differential double-strip transmission line that typically has an impedance between 60 and 100 W. However, for purposes of matching of impedances, transmission lines having lower impedances are also needed. The transistors in each MMIC are, more specifically, one or more pair(s) of InP-based high-electron-mobility transistors (HEMTs). Heretofore, it has been common practice to fabricate each such pair as a single device configured in the side-to-side electrode sequence source/gate/drain/gate/source. This configuration enables low-inductance source grounding from the sides of the device. However, this configuration is not suitable for differential operation, in which it is necessary to drive the gates differentially and to feed the output from the drain electrodes differentially. The special transmission-line design provides for three conductors, instead of two, in places where lower impedance is needed. The third conductor is a metal strip placed underneath the differential double-strip transmission line. The third conductor increases the capacitance per unit length of the transmission line by such an amount as to reduce the impedance to between 5 and 15 W. In the special HEMT-pair design, the side-to-side electrode sequence is changed to drain/gate/source/gate/ drain. In addition, the size of the source is reduced significantly, relative to corresponding sizes in prior designs. This reduction is justified by the fact that, by virtue of the differential configuration, the device has an internal virtual ground, and

  4. 160-190 GHz Monolithic Low Noise Amplifiers

    NASA Technical Reports Server (NTRS)

    Kok, Y. L.; Wang, H.; Huang, T. W.; Lai, R.; Chen, Y. C.; Sholley, M.; Block, T.; Streit, D. C.; Liu, P. H.; Allen, B. R.; Samoska, L.; Gaier, T.; Barsky, Mike

    1998-01-01

    This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.

  5. Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Schmitz, Adele

    2009-01-01

    Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2

  6. Ultra-low noise miniaturized neural amplifier with hardware averaging

    NASA Astrophysics Data System (ADS)

    Dweiri, Yazan M.; Eggers, Thomas; McCallum, Grant; Durand, Dominique M.

    2015-08-01

    presence of high source impedances that are associated with the miniaturized contacts and the high channel count in electrode arrays. This technique can be adopted for other applications where miniaturized and implantable multichannel acquisition systems with ultra-low noise and low power are required.

  7. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  8. A Low Noise Amplifier for Neural Spike Recording Interfaces

    PubMed Central

    Ruiz-Amaya, Jesus; Rodriguez-Perez, Alberto; Delgado-Restituto, Manuel

    2015-01-01

    This paper presents a Low Noise Amplifier (LNA) for neural spike recording applications. The proposed topology, based on a capacitive feedback network using a two-stage OTA, efficiently solves the triple trade-off between power, area and noise. Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. The proposed LNA has been implemented in a 130 nm CMOS technology and occupies 0.053 mm-sq. Experimental results show that the LNA offers a noise efficiency factor of 2.16 and an input referred noise of 3.8 μVrms for 1.2 V power supply. It provides a gain of 46 dB over a nominal bandwidth of 192 Hz–7.4 kHz and consumes 1.92 μW. The performance of the proposed LNA has been validated through in vivo experiments with animal models. PMID:26437411

  9. A Low Noise Amplifier for Neural Spike Recording Interfaces.

    PubMed

    Ruiz-Amaya, Jesus; Rodriguez-Perez, Alberto; Delgado-Restituto, Manuel

    2015-01-01

    This paper presents a Low Noise Amplifier (LNA) for neural spike recording applications. The proposed topology, based on a capacitive feedback network using a two-stage OTA, efficiently solves the triple trade-off between power, area and noise. Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. The proposed LNA has been implemented in a 130 nm CMOS technology and occupies 0.053 mm-sq. Experimental results show that the LNA offers a noise efficiency factor of 2.16 and an input referred noise of 3.8 μVrms for 1.2 V power supply. It provides a gain of 46 dB over a nominal bandwidth of 192 Hz-7.4 kHz and consumes 1.92 μW. The performance of the proposed LNA has been validated through in vivo experiments with animal models. PMID:26437411

  10. Cryogenic ultra-low noise HEMT amplifiers board

    NASA Astrophysics Data System (ADS)

    de la Broïse, Xavier; Bounab, Ayoub

    2015-07-01

    High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at a very low temperature, have demonstrated their capacity to be used in place of Si JFETs, when very high input impedance and working temperatures below 100 K are required. We have developed and tested simple amplifiers based only on this transistor technology, in order to work at a temperature as low as 1 K or less. They demonstrate at 4.2 K a typical noise of 1.6 nV/√{ Hz } at 100 Hz, 0.42 nV/√{ Hz } at 1 kHz and 0.32 nV/√{ Hz } at 10 kHz, with a gain of 50 and a power consumption of 1.4 mW per channel. Two boards have been designed for two different research applications: one for the readout of GMR magnetometers for medical and space applications, the other for search of weakly interacting massive particles (WIMPs) in Edelweiss experiment (HARD project).

  11. A low-noise 4.8 GHz amplifier for the Russian Radioastron VLBI satellite

    NASA Astrophysics Data System (ADS)

    Schmidt, A.; Wongsowijoto, Sam

    A low-noise 4.8 GHz amplifier has been designed for the Russian Radioastron satellite. The design, realization, and spaceflight testing of the amplifier are briefly described. The most important parameters of the prototype are given.

  12. Comparison of cryogenic W band low noise amplifier based on different III-V HEMT foundry process and technologies

    NASA Astrophysics Data System (ADS)

    Valenziano, L.; Zannoni, M.; Mariotti, S.; Cremonini, A.; De Rosa, A.; Banfi, S.; Baó, A.; Gervasi, M.; Limiti, E.; Passerini, A.; Schiavone, F.

    2014-07-01

    We present the results of a development activity for cryogenic Low Noise Amplifiers based on HEMT technology for ground based and space-borne application. We have developed and realized two LNA design in W band, based on m-HEMT technology. MMIC chips have been manufactured by European laboratories and companies and assembled in test modules by our team. We compare performances with other technologies and manufacturers. LNA RF properties (noise figures, S-parameters) have been measured at room and cryogenic temperature and test results are reported in this paper. Performance are compared with those of state-of-the-art devices, as available in the literature. Strengths and improvements of this project are also discussed.

  13. A 2385 MHz, 2-stage low noise amplifier design

    NASA Technical Reports Server (NTRS)

    Sifri, Jack D.

    1986-01-01

    This article shows the design aspects of a 2.385 GHz low noise preamplifier with a .7 dB noise figure and 16.5 dB gain using the NE 67383 FET. The design uses a unique method in matching the input which achieves optimum noise figure and unconditional stability.

  14. MMIC Power Amplifier Puts Out 40 mW From 75 to 110 GHz

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene

    2006-01-01

    A three-stage monolithic microwave integrated circuit (MMIC) W-band amplifier has been constructed and tested in a continuing effort to develop amplifiers as well as oscillators, frequency multipliers, and mixers capable of operating over wide frequency bands that extend above 100 GHz. There are numerous potential uses for MMICs like these in scientific instruments, radar systems, communication systems, and test equipment operating in this frequency range.

  15. Matching technique yields optimum LNA performance. [Low Noise Amplifiers

    NASA Technical Reports Server (NTRS)

    Sifri, J. D.

    1986-01-01

    The present article is concerned with a case in which an optimum noise figure and unconditional stability have been designed into a 2.385-GHz low-noise preamplifier via an unusual method for matching the input with a suspended line. The results obtained with several conventional line-matching techniques were not satisfactory. Attention is given to the minimization of thermal noise, the design procedure, requirements for a high-impedance line, a sampling of four matching networks, the noise figure of the single-line matching network as a function of frequency, and the approaches used to achieve unconditional stability.

  16. Thirty GHz low noise GaAs FET amplifiers

    NASA Astrophysics Data System (ADS)

    Oxley, C. H.; Arnold, J.

    1984-09-01

    Selection and characterization of transmission media, and characterization of a 0.3 micron gate length gallium arsenide MESFET usable to 30 GHz, was undertaken to provide a data base for the design of an integrated amplifier for satellite communications. An amplifier configuration was chosen to achieve the ESA specification, and single stage amplifier modules were designed and tested. Integration of these modules into a complete high gain amplifier with temperature compensation and operating between WG22 interfaces is achieved. Tests against the full performance specification were conducted.

  17. 32-GHz cryogenically cooled HEMT low-noise amplifiers

    NASA Technical Reports Server (NTRS)

    Duh, K. H. George; Kopp, William F.; Ho, Pin; Chao, Pane-Chane; Ko, Ming-Yih; Smith, Phillip M.; Ballingall, James M.; Bautista, J. Javier; Ortiz, Gerardo G.

    1989-01-01

    The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz high electron mobility transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

  18. On 32-GHz cryogenically cooled HEMT low-noise amplifiers

    NASA Technical Reports Server (NTRS)

    Bautista, J. J.; Ortiz, G. G.; Duh, K. H. G.; Kopp, W. F.; Ho, P.; Chao, P. C.; Kao, M. Y.; Smith, P. M.; Ballingall, J. M.

    1988-01-01

    The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz High Electron Mobility Transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 K to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

  19. Burnout studies of X-band radar negative resistance transistor low noise amplifiers

    NASA Astrophysics Data System (ADS)

    Paul, D. K.; Gardner, P.

    1992-03-01

    GaAs FETs and HEMTs can be configured to give low noise, negative resistance microwave amplification. Such low noise amplifiers have the advantage of an inherent bypass path after device burnout. This feature is potentially useful in radar receiver applications. Test results for prototype LNAs are described, showing burnout energies comparable to those of conventional transmission mode amplifiers using similar devices. Bypass path losses after burnout are around 4 dB, approximately 20 dB less than for a failed transmission mode amplifier.

  20. Problems of the design of low-noise input devices. [parametric amplifiers

    NASA Technical Reports Server (NTRS)

    Manokhin, V. M.; Nemlikher, Y. A.; Strukov, I. A.; Sharfov, Y. A.

    1974-01-01

    An analysis is given of the requirements placed on the elements of parametric centimeter waveband amplifiers for achievement of minimal noise temperatures. A low-noise semiconductor parametric amplifier using germanium parametric diodes for a receiver operating in the 4 GHz band was developed and tested confirming the possibility of satisfying all requirements.

  1. Miniature Ku-band low-noise amplifier using batch-process technology

    NASA Astrophysics Data System (ADS)

    Fathy, A.; Jozwiak, P.; Mykietyn, E.; Pendrick, V.; Brown, R.

    1986-12-01

    The steps in developing a low-noise three-stage miniature amplifier operating from 11.7 to 12.2 GHz are examined. The amplifier has an 18-dB gain over the band and a noise figure of 4 dB. An accurate network model, including a feedback loop, is presented for the design and optimization of the amplifier. The circuit realization and the measured performance in relation to VSWR, gain flatness, stability, and noise figure, are discussed.

  2. A 20-GHz low-noise HEMT amplifier for satellite communications

    NASA Astrophysics Data System (ADS)

    Tokumitsu, Y.; Niori, M.; Saito, T.

    1984-03-01

    A description is given of a 20-Ghz low-noise amplifier that uses a new device, a low-noise high electron mobiity transistor (HEMT), developed for the receiver front-end in earth stations for 30/20-GHz satellite communications systems. The minimum noise figure of the HEMT is 3.1 dB, and the associated gain is 7.5 dB at 20 GHz. It is believed that before too long the HEMT will surpass the GaAs FET as a low-noise device. In the test amplifier at an operating frequency range from 17.6 GHz to 19.2 Ghz, the noise figure is 4.2 dB and the gain is 28.6 dB. The minimum noise figure is 3.9 dB. It is expected that cooling the amplifier will give a significant improvement in the noise figure.

  3. MMIC Amplifier Produces Gain of 10 dB at 235 GHz

    NASA Technical Reports Server (NTRS)

    Dawson, Douglas; Fung, King Man; Lee, Karen; Samoska, Lorene; Wells, Mary; Gaier, Todd; Kangaslahti, Pekka; Grundbacher, Ronald; Lai, Richard; Raja, Rohit; Liu, Po-Hsin

    2007-01-01

    The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.

  4. Cryogenic Design of the Deep Space Network Large Array Low-Noise Amplifier System

    NASA Astrophysics Data System (ADS)

    Britcliffe, M. J.; Hanson, T. R.; Franco, M. M.

    2004-05-01

    This article describes the cryogenic design and performance of a prototype low-noise amplifier (LNA) system for the Deep Space Network (DSN) Large Array task. The system is used to cool a dual-frequency feed system equipped with high-electron mobility transistor (HEMT) low-noise amplifiers and the associated support electronics. The LNA/feed system operates at a temperature under 18 K. The system is designed to be manufactured at minimum cost. The design considerations, including the cryocooler to be used, vacuum system, microwave interconnects, mechanical components, and radiation shielding, are discussed.

  5. A Ka-band Four-stage Self-biased Monolithic Low Noise Amplifier

    NASA Astrophysics Data System (ADS)

    Yang, Ziqiang; Yang, Tao; Liu, Yu

    2009-05-01

    A Ka-band four-stage self-biased monolithic low noise amplifier has been developed using a commercial 0.18-µm pseudomorphic high electron-mobility transistor (pHEMT) process. For the application of self-bias technique, the low noise amplifier (LNA) is biased from a single power supply rail. The LNA has achieved a broadband performance with a gain of more than 18 dB, a noise figure of less than 3.8 dB in the RF frequency of 26 to 40 GHz. The chip size is 3 × 1 mm2.

  6. Beyond G-band : a 235 GHz InP MMIC amplifier

    NASA Technical Reports Server (NTRS)

    Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

    2005-01-01

    We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

  7. Cryogenic, low-noise high electron mobility transistor amplifiers for the Deep Space Network

    NASA Technical Reports Server (NTRS)

    Bautista, J. J.

    1993-01-01

    The rapid advances recently achieved by cryogenically cooled high electron mobility transistor (HEMT) low-noise amplifiers (LNA's) in the 1- to 10-GHz range are making them extremely competitive with maser amplifiers. In order to address future spacecraft navigation, telemetry, radar, and radio science needs, the Deep Space Network is investing both maser and HEMT amplifiers for its Ka-band (32-GHz) downlink capability. This article describes the current state cryogenic HEMT LNA development at Ka-band for the DSN. Noise performance results at S-band (2.3 GHz) and X-band (8.5 GHz) for HEMT's and masers are included for completeness.

  8. Cryogenic, low-noise high electron mobility transistor amplifiers for the Deep Space Network

    NASA Astrophysics Data System (ADS)

    Bautista, J. J.

    1993-11-01

    The rapid advances recently achieved by cryogenically cooled high electron mobility transistor (HEMT) low-noise amplifiers (LNA's) in the 1- to 10-GHz range are making them extremely competitive with maser amplifiers. In order to address future spacecraft navigation, telemetry, radar, and radio science needs, the Deep Space Network is investing both maser and HEMT amplifiers for its Ka-band (32-GHz) downlink capability. This article describes the current state cryogenic HEMT LNA development at Ka-band for the DSN. Noise performance results at S-band (2.3 GHz) and X-band (8.5 GHz) for HEMT's and masers are included for completeness.

  9. Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers

    NASA Technical Reports Server (NTRS)

    Larkoski, Patricia V.; Kangaslahti, Pekka; Samoska, Lorene; Lai, Richard; Sarkozy, Stephen

    2013-01-01

    We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

  10. Amplifier arrays for CMB polarization

    NASA Technical Reports Server (NTRS)

    Gaier, Todd; Lawrence, Charles R.; Seiffert, Michael D.; Wells, Mary M.; Kangaslahti, Pekka; Dawson, Douglas

    2003-01-01

    Cryogenic low noise amplifier technology has been successfully used in the study of the cosmic microwave background (CMB). MMIC (Monolithic Millimeter wave Integrated Circuit) technology makes the mass production of coherent detection receivers feasible.

  11. Advances in MMIC technology for communications satellites

    NASA Astrophysics Data System (ADS)

    Leonard, Regis F.

    1992-03-01

    This paper discusses NASA Lewis Research Center's program for development of monolithic microwave integrated circuits (MMIC) for application in space communications. Emphasis will be on the improved performance in power amplifiers and low noise receivers which has been made possible by the development of new semiconductor materials and devices. Possible applications of high temperature superconductivity for space communications will also be presented.

  12. Low noise buffer amplifiers and buffered phase comparators for precise time and frequency measurement and distribution

    NASA Technical Reports Server (NTRS)

    Eichinger, R. A.; Dachel, P.; Miller, W. H.; Ingold, J. S.

    1982-01-01

    Extremely low noise, high performance, wideband buffer amplifiers and buffered phase comparators were developed. These buffer amplifiers are designed to distribute reference frequencies from 30 KHz to 45 MHz from a hydrogen maser without degrading the hydrogen maser's performance. The buffered phase comparators are designed to intercompare the phase of state of the art hydrogen masers without adding any significant measurement system noise. These devices have a 27 femtosecond phase stability floor and are stable to better than one picosecond for long periods of time. Their temperature coefficient is less than one picosecond per degree C, and they have shown virtually no voltage coefficients.

  13. A Low-Noise Transimpedance Amplifier for BLM-Based Ion Channel Recording

    PubMed Central

    Crescentini, Marco; Bennati, Marco; Saha, Shimul Chandra; Ivica, Josip; de Planque, Maurits; Morgan, Hywel; Tartagni, Marco

    2016-01-01

    High-throughput screening (HTS) using ion channel recording is a powerful drug discovery technique in pharmacology. Ion channel recording with planar bilayer lipid membranes (BLM) is scalable and has very high sensitivity. A HTS system based on BLM ion channel recording faces three main challenges: (i) design of scalable microfluidic devices; (ii) design of compact ultra-low-noise transimpedance amplifiers able to detect currents in the pA range with bandwidth >10 kHz; (iii) design of compact, robust and scalable systems that integrate these two elements. This paper presents a low-noise transimpedance amplifier with integrated A/D conversion realized in CMOS 0.35 μm technology. The CMOS amplifier acquires currents in the range ±200 pA and ±20 nA, with 100 kHz bandwidth while dissipating 41 mW. An integrated digital offset compensation loop balances any voltage offsets from Ag/AgCl electrodes. The measured open-input input-referred noise current is as low as 4 fA/√Hz at ±200 pA range. The current amplifier is embedded in an integrated platform, together with a microfluidic device, for current recording from ion channels. Gramicidin-A, α-haemolysin and KcsA potassium channels have been used to prove both the platform and the current-to-digital converter. PMID:27213382

  14. A Low-Noise Transimpedance Amplifier for BLM-Based Ion Channel Recording.

    PubMed

    Crescentini, Marco; Bennati, Marco; Saha, Shimul Chandra; Ivica, Josip; de Planque, Maurits; Morgan, Hywel; Tartagni, Marco

    2016-01-01

    High-throughput screening (HTS) using ion channel recording is a powerful drug discovery technique in pharmacology. Ion channel recording with planar bilayer lipid membranes (BLM) is scalable and has very high sensitivity. A HTS system based on BLM ion channel recording faces three main challenges: (i) design of scalable microfluidic devices; (ii) design of compact ultra-low-noise transimpedance amplifiers able to detect currents in the pA range with bandwidth >10 kHz; (iii) design of compact, robust and scalable systems that integrate these two elements. This paper presents a low-noise transimpedance amplifier with integrated A/D conversion realized in CMOS 0.35 μm technology. The CMOS amplifier acquires currents in the range ±200 pA and ±20 nA, with 100 kHz bandwidth while dissipating 41 mW. An integrated digital offset compensation loop balances any voltage offsets from Ag/AgCl electrodes. The measured open-input input-referred noise current is as low as 4 fA/√Hz at ±200 pA range. The current amplifier is embedded in an integrated platform, together with a microfluidic device, for current recording from ion channels. Gramicidin-A, α-haemolysin and KcsA potassium channels have been used to prove both the platform and the current-to-digital converter. PMID:27213382

  15. A Dynamic Instrumentation Amplifier for Low-Power and Low-Noise Biopotential Acquisition

    PubMed Central

    Kim, Jongpal; Ko, Hyoungho

    2016-01-01

    A low-power and low-noise dynamic instrumentation amplifier (IA) for biopotential acquisition is presented. A dynamic IA that can reduce power consumption with a timely piecewise power-gating method, and noise level with an alternating input and chopper stabilization technique is fabricated with a 0.13-μm CMOS. Using the reconfigurable architecture of the IA, various combinations of the low-noise schemes are investigated. The combination of power gating and chopper stabilization shows a lower noise performance than the combination of power gating and alternating input switching scheme. This dynamic IA achieved a power reduction level of 50% from 10 µA to 5 µA and a noise reduction of 90% from 9.1 µVrms to 0.92 µVrms with the combination of the power gating and chopper stabilization scheme.

  16. 6 to 18 GHz GaAs FET/MMIC amplifiers provide 1 W saturated output

    NASA Astrophysics Data System (ADS)

    Bybokas, Jim

    1987-05-01

    The paper describes the construction and performance characteristics of three amplifiers that combine GaAs FETs, GaAs MMICs, and thin-film hybrid construction and can provide more than 1 W of saturated output power over the 6 to 18 GHz frequency range. These amplifiers feature minimum gains of 26, 34, and 42 dB and noise figures of 13, 10, and 9 dB, respectively, and are specified for operation over the 0 to +50 C temperature range. Amplifier block diagram is included.

  17. A microwave cryogenic low-noise amplifier based on sige heterostructures

    NASA Astrophysics Data System (ADS)

    Ivanov, B. I.; Grajcar, M.; Novikov, I. L.; Vostretsov, A. G.; Il'ichev, E.

    2016-04-01

    A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude-frequency response of the "supercon-ducting qubit-coplanar cavity" structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.

  18. Using the SLUG as a First Stage, Low Noise Microwave Amplifier for Superconducting Qubit Readout

    NASA Astrophysics Data System (ADS)

    Leonard, Edward, Jr.; Thorbeck, Ted; Zhu, Shaojiang; McDermott, Robert

    2015-03-01

    The SLUG (Superconducting Low-inductance Undulatory Galvonometer) microwave amplifier is a large bandwidth, high saturation power, high gain, and low noise microwave element designed as a first stage cryogenic amplifier for dispersive readout of superconducting qubits. High forward gain is paired with simultaneous high reverse isolation such that bulky, expensive cryogenic circulators and isolators might be eliminated from the microwave readout chain. Here we present recent experimental data on SLUG gain, noise, and reverse isolation. We achieve gain over 10 dB at 7 GHz across a band of several hundred MHz, with system added noise of order one photon. For appropriate flux bias of the device, reverse isolation is better than -20 dB. These qualities make the SLUG a very desirable first stage amplifier for a scalable superconducting qubit readout.

  19. High-performance Ka-band and V-band HEMT low-noise amplifiers

    NASA Technical Reports Server (NTRS)

    Duh, K. H. George; Chao, Pane-Chane; Smith, Phillip M.; Lester, Luke F.; Lee, Benjamin R.

    1988-01-01

    Quarter-micron-gate-length high-electron-mobility transistors (HEMTs) have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies, with minimum noise figures of 1.2 dB at 32 GHz and 1.8 dB at 60 GHz. At Ka-band, two-stage and three-stage HEMT low noise amplifiers have demonstrated noise figures of 1.7 and 1.9 dB, respectively, with associated gains of 17.0 and 24.0 dB at 32 GHz. At V-band, two stage and three-stage HEMT amplifiers yielded noise figures of 3.2 and 3.6 dB, respectively, with associated gains of 12.7 and 20.0 dB at 60 GHz. The 1-dB-gain compression point of all the amplifiers is greater than +6 dBm. The results clearly show the potential of short-gate-length HEMTs for high-performance millimeter-wave receiver applications.

  20. A 2.3-GHz low-noise cryo-FET amplifier

    NASA Technical Reports Server (NTRS)

    Loreman, J.

    1988-01-01

    A cryogenic cooled, low-noise Field Effect Transistor (FET) amplifier assembly for use at 2.2 to 2.3 GHz was developed for the DSN to meet the requirements of a Very Long Baseline Interferometry (VLBI) upgrade. An amplifier assembly was developed at JPL that uses a commercial closed-cycle helium refrigerator (CCR) to cool a FET amplifier to an operating temperature of 15 K. A cooled probe waveguide-to-coaxial transition similar to that used in the research and development Ultra-Low-Noise S-band Traveling Wave Maser (TWM) is used to minimize input line losses. Typical performance includes an input flange equivalent noise contribution of 14.5 K, a gain slope of less than 0.05 dB/MHz across a bandwidth of 2.2 to 2.3 GHz, an input VSWR of 1.5:1 at 2.25 GHz, and an insertion gain of 45 + or - 1 dB across the bandwidth of 2.2 to 2.3 GHz. Three 2.3 GHz FET/CCR assemblies were delivered to the DSN in the spring of 1987.

  1. On-Wafer Measurement of a Multi-Stage MMIC Amplifier with 10 dB of Gain at 475 GHz

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene A.; Fung, KingMan; Pukala, David M.; Kangaslahti, Pekka P.; Lai, Richard; Ferreira, Linda

    2012-01-01

    JPL has measured and calibrated a WR2.2 waveguide wafer probe from GGB Industries in order to allow for measurement of circuits in the 325-500 GHz range. Circuits were measured, and one of the circuits exhibited 10 dB of gain at 475 GHz. The MMIC circuit was fabricated at Northrop Grumman Corp. (NGC) as part of a NASA Innovative Partnerships Program, using NGC s 35-nm-gatelength InP HEMT process technology. The chip utilizes three stages of HEMT amplifiers, each having two gate fingers of 10 m in width. The circuits use grounded coplanar waveguide topology on a 50- m-thick substrate with through substrate vias. Broadband matching is achieved with coplanar waveguide transmission lines, on-chip capacitors, and open stubs. When tested with wafer probing, the chip exhibited 10 dB of gain at 475 GHz, with over 9 dB of gain from 445-490 GHz. Low-noise amplifiers in the 400-500 GHz range are useful for astrophysics receivers and earth science remote sensing instruments. In particular, molecular lines in the 400-500 GHz range include the CO 4-3 line at 460 GHz, and the CI fine structure line at 492 GHz. Future astrophysics heterodyne instruments could make use of high-gain, low-noise amplifiers such as the one described here. In addition, earth science remote sensing instruments could also make use of low-noise receivers with MMIC amplifier front ends. Present receiver technology typically employs mixers for frequency down-conversion in the 400-500 GHz band. Commercially available mixers have typical conversion loss in the range of 7-10 dB with noise figure of 1,000 K. A low-noise amplifier placed in front of such a mixer would have 10 dB of gain and lower noise figure, particularly if cooled to low temperature. Future work will involve measuring the noise figure of this amplifier.

  2. Wideband 220 GHz solid state power amplifier MMIC within minimal die size

    NASA Astrophysics Data System (ADS)

    Cheron, Jerome; Grossman, Erich N.

    2014-05-01

    A wideband and compact solid state power amplifier MMIC is simulated around 220 GHz. It utilizes 6 μm emitter length common base HBTs from a 250 nm InP HBT technology. Specific power cells and power combiners are simulated in order to minimize the width of the die, which must not exceed 300 μm to avoid multimode propagation in the substrate. Four stages are implemented over a total area of the (275x1840) μm2. Simulations of this power amplifier indicate a minimum output power of 14 dBm associated with 16 dB of power gain from 213 GHz to 240 GHz.

  3. Development of a cryogenic DC-low noise amplifier for SQuID-based readout electronics

    NASA Astrophysics Data System (ADS)

    Macculi, C.; Torrioli, G.; Di Giorgio, A.; Spinoglio, L.; Piro, Luigi

    2014-07-01

    We present the preliminary results of the design and test activities for a DC cryogenic low noise amplifier for the SAFARI imaging spectrometer, planned to be onboard the SPICA mission, necessary not only to drive, as usual, the voltage signal produced by the SQuID but also to boost such signals over about 7 meter of path towards the warm feedback electronics. This development has been done in the framework of the mission preparation studies, within the European Consortium for the development of the SAFARI instrument. The actual configuration of the SAFARI focal plane assembly (FPA), indeed, foresees a long distance to the warm back end electronics. It is therefore mandatory to boost the faint electric signal coming from the SQuID device by keeping under control both power dissipation and noise: this is the main role of the designed Cryogenic Low Noise Amplifier (LNA). Working at 136K, it has a differential input gain-stage, and a differential balanced voltage buffer output stage, running at few mW target overall power. At present the design is based on the use of Heterojunction Si:Ge transistors, the required bandwidth is DC-4MHz and the required noise lower than 1 nV/rtHz.

  4. 50 W low noise dual-frequency laser fiber power amplifier.

    PubMed

    Kang, Ying; Cheng, Lijun; Yang, Suhui; Zhao, Changming; Zhang, Haiyang; He, Tao

    2016-05-01

    A three-stage dual-frequency laser signal amplification system is presented. An output from a narrow-linewidth Nd:YAG nonplanar ring-oscillator (NPRO) is split into two parts, one of them is frequency shifted by an acoustooptic modulator (AOM) then coupled into a single mode optical fiber. The other part is coupled into another single mode fiber then combined with the frequency-shifted beam with a 2 to 1 single mode fiber coupler. The combined beam has a power of 20 mW containing two frequency components with frequency separation of 150 ± 25 MHz. The dual-frequency signal is amplified via a three-stage Yb3+-doped diode pumped fiber power amplifier. The maximum amplified power is 50.3 W corresponding to a slope efficiency of 73.72% of the last stage. The modulation depth and signal to noise ratio (SNR) of the beat signal are well maintained in the amplifying process. The dual-frequency laser fiber power amplifier provides robust optical carried RF signal with high power and low noise. PMID:27137536

  5. A W-band integrated power module using MMIC MESFET power amplifiers and varactor doublers

    SciTech Connect

    Ho, T.C.; Chen, Seng Woon; Pande, K. ); Rice, P.D. )

    1993-12-01

    A high-performance integrated power module using U-band MMIC MESFET power amplifiers in conjunction with W-band MMIC high efficiency varactor doublers has been developed for millimeter-wave system applications. This paper presents the design, fabrication, and performance of this W-band integrated power module. Measured results of the complete integrated power module show an output power of 90 mW with an overall associated gain of 29.5 dB at 94 GHz. A saturated power of over 95 mW was also achieved. These results represent the highest reported power and gain at W-band using MESFET and varactor frequency doubling technologies. This integrated power module is suitable for the future 94 GHz missile seeker applications.

  6. Updated design for a low-noise, wideband transimpedance photodiode amplifier

    SciTech Connect

    Paul, S. F.; Marsala, R.

    2006-10-15

    The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e{sub Na}=1.2 nV/{radical}Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >{approx}2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise.

  7. Validation of the ultrastable low-noise current amplifier as travelling standard for small direct currents

    NASA Astrophysics Data System (ADS)

    Drung, D.; Krause, C.; Giblin, S. P.; Djordjevic, S.; Piquemal, F.; Séron, O.; Rengnez, F.; Götz, M.; Pesel, E.; Scherer, H.

    2015-12-01

    An interlaboratory comparison of small-current generation and measurement capability is presented with the ultrastable low-noise current amplifier (ULCA) acting as travelling standard. Various measurements at direct currents between 0.16 nA and 13 nA were performed to verify the degree of agreement between the three national metrology institutes involved in the study. Consistency well within one part per million (ppm) was found. Due to harsh environmental conditions during shipment, the ULCA’s transfer accuracy had been limited to about  ±0.4 ppm. Supplemental measurements performed at PTB indicate that further improvements in accuracy are possible. Relative uncertainties of 0.1 ppm are achieved by applying on-site calibration of the ULCA with a suitable cryogenic current comparator.

  8. Wideband ultra-low noise cryogenic InP IF amplifiers for the Herschel mission radiometers

    NASA Astrophysics Data System (ADS)

    Lopez-Fernandez, Isaac; Gallego-Puyol, Juan D.; Diez, Carmen; Barcia, Alberto; Martin-Pintado, Jesus

    2003-02-01

    The sub-millimeter radiometers of the Herschel mission have very stringent requirements. The scientific goals require an instantaneous bandwidth of four GHz with very low noise, flat gain and low power dissipation. Short-term gain stability of the amplifier is important, because gain fluctuations could limit the sensitivity of the instrument. Besides, a highly reliable, low weight unit is required to be compatible with the space instrumentation standards. The amplifiers will be used in conjunction with HEB and SIS mixers in all 7 channels of the instrument. This paper describes the design, the special construction techniques and the results of the amplifiers built by Centro Astronómico de Yebes for the development model of the Herschel Heterodyne Instrument. The average noise temperature obtained in the 4-8 GHz band is 3.5 K, with a gain of 27 +/-1.1 dB at an ambient temperature of 15 K and keeping the total power dissipation below the allowed 4 mW. Normalized gain fluctuations were carefully measured, being lower than 1.5·10-4 Hz-1/2 @ 1 Hz. Space qualification of the design is in progress.

  9. Ka-Band Waveguide Hybrid Combiner for MMIC Amplifiers With Unequal and Arbitrary Power Output Ratio

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.; Chevalier, Christine T.; Wintucky, Edwin G.; Freeman, Jon C.

    2009-01-01

    The design, simulation and characterization of a novel Ka-band (32.05 +/- 0.25 GHz) rectangular waveguide branch-line hybrid unequal power combiner is presented. The manufactured combiner was designed to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The application of the branch-line hybrid for combining two MMIC power amplifiers with output power ratio of two is demonstrated. The measured combining efficiency is approximately 93 percent over the above frequency band.

  10. Ka-Band Waveguide Hybrid Combiner for MMIC Amplifiers with Unequal and Arbitrary Power Output Ratio

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.; Chevalier, Christine T.; Wintucky, Edwin G.; Freeman, Jon C.

    2009-01-01

    The design, simulation and characterization of a novel Ka-band (32.05 +/- 0.25 GHz) rectangular waveguide branchline hybrid unequal power combiner is presented. The manufactured combiner was designed to combine input signals, which are nearly in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The application of the branch-line hybrid for combining two monolithic microwave integrated circuit (MMIC) power amplifiers with output power ratio of two is demonstrated. The measured combining efficiency is 92.9% at the center frequency of 32.05 GHz.

  11. Instrumental and Observational Studies in Radio Astronomy, Low Noise Amplifier Design and Methanol Maser Research

    NASA Astrophysics Data System (ADS)

    Minier, V.

    1998-10-01

    ``Radio astronomy is the study of the universe by observing electromagnetic radiation after it has been amplified. The use of amplifiers that preserve the oscillatory character of radiation - the phase information - is the mark of Radio astronomy.'' Thus, the development of low noise amplifiers for microwave and millimeter wavelengths is a major part of Radio astronomy as important as the observations themselves. This technical report involves those two aspects of Radio astronomy, the observational and technical aspects. In the first part, observations of methanol masers in massive star forming regions using Very Long Baseline Interferometry (VLBI) are presented. The second part concerns the realization of low noise amplifiers using in a radio camera. Recent observations have confirmed that the methanol masers are powerful tools for probing the regions of massive star formation. The methanol masers fall in two distinct classes related to their location in the star forming regions. Class I methanol masers are observed offset far away from the UC HII region emission peak. They are certainly collisionally pumped and may occur in the interface between high velocity gas outflows and the ambient molecular material. Class II methanol masers coincide with the UC HII region emission. They may be radiatively pumped by FIR radiation from the dust grains and reside either in spherical layers surrounding the UC HII regions or in circumstellar discs. The maser spots are usually compact (~1-10 AU) and lie in region of physical conditions n(H)~104-108 cm-3 and T=100-1000 K. CH3OH may be produced by hydrogenation of CO on the surface of the icy mantles of the dust grains . The methanol is then injected in the molecular gas by evaporation of the ice (n(H)=106 cm-3, T=100-300 K). In this report we present VLBI observations of 6.7 and 12.2 GHz methanol masers in the star forming regions NGC7538, W75N and S252. Our results show the existence of two groups of masers in NGC7538. The

  12. Simple nonlinearity evaluation and modeling of low-noise amplifiers with application to radio astronomy receivers.

    PubMed

    Casas, F J; Pascual, J P; de la Fuente, M L; Artal, E; Portilla, J

    2010-07-01

    This paper describes a comparative nonlinear analysis of low-noise amplifiers (LNAs) under different stimuli for use in astronomical applications. Wide-band Gaussian-noise input signals, together with the high values of gain required, make that figures of merit, such as the 1 dB compression (1 dBc) point of amplifiers, become crucial in the design process of radiometric receivers in order to guarantee the linearity in their nominal operation. The typical method to obtain the 1 dBc point is by using single-tone excitation signals to get the nonlinear amplitude to amplitude (AM-AM) characteristic but, as will be shown in the paper, in radiometers, the nature of the wide-band Gaussian-noise excitation signals makes the amplifiers present higher nonlinearity than when using single tone excitation signals. Therefore, in order to analyze the suitability of the LNA's nominal operation, the 1 dBc point has to be obtained, but using realistic excitation signals. In this work, an analytical study of compression effects in amplifiers due to excitation signals composed of several tones is reported. Moreover, LNA nonlinear characteristics, as AM-AM, total distortion, and power to distortion ratio, have been obtained by simulation and measurement with wide-band Gaussian-noise excitation signals. This kind of signal can be considered as a limit case of a multitone signal, when the number of tones is very high. The work is illustrated by means of the extraction of realistic nonlinear characteristics, through simulation and measurement, of a 31 GHz back-end module LNA used in the radiometer of the QUIJOTE (Q U I JOint TEnerife) CMB experiment. PMID:20687750

  13. Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

    NASA Astrophysics Data System (ADS)

    Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P.

    2016-01-01

    We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.

  14. Low noise and high CMRR front-end amplifier dedicated to portable EEG acquisition system.

    PubMed

    Chebli, Robert; Sawan, Mohamad

    2013-01-01

    This paper concerns the design and implementation of a fully integrated low noise and high CMRR rail-to-rail preamplifier dedicated to EEG acquisition channel. The preamplification technique is based on two complementary CMOS True Logarithmic Amplifier (TLA) stages connected in parallel. The TLA largely amplifies small amplitude of EEG signals, and moderately the large amplitude ones created during epileptic. A chopper stabilization technique is used to filter the 1/ƒ noise and the DC offset voltage of the input CMOS transistors and to increase the common-mode rejection ratio (CMRR). Due to the TLA structure, a high CMRR and high power supply rejection ratio are achieved and the signal-to-noise ratio (of the channel is better enhanced). To snugly fit the ADC input window to the EEG signal magnitude a new programming gain approach is implemented. Also, a chopper spike filter is used to cancel the spike voltages generated by the charge injections of modulator/demodulator switches. The proposed preamplifier is implemented in 0.18 µm CMOS technology. Post-layout simulation results exhibit 253 dB @50/60 Hz as CMRR, 500 nVrms @100 Hz as input-referred noise while consuming 55 µA from a 1.8 V supply. PMID:24110240

  15. Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.; Chevalier, Christine T.; Wintucky, Edwin G.; Freeman, Jon C.

    2010-01-01

    The design, simulation, and characterization of a novel Ka-band (32.05 0.25 GHz) rectangular waveguide two-way branch-line hybrid unequal power combiner (with port impedances matched to that of a standard WR-28 waveguide) has been created to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The measured combining efficiency is 92.9 percent at the center frequency of 32.05 GHz. This circuit is efficacious in combining the unequal output power from two Ka-band GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with high efficiency. The component parts include the branch-line hybrid-based power combiner and the MMIC-based PAs. A two-way branch-line hybrid is a four-port device with all ports matched; power entering port 1 is divided in phase, and into the ratio 2:1 between ports 3 and 4. No power is coupled to port 2. MMICs are a type of integrated circuit fabricated on GaAs that operates at microwave frequencies, and performs the function of signal amplification. The power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA's deep space frequency band. The power combiner would have an output return loss better than 20 dB. Isolation between the output port and the isolated port is greater than 25 dB. Isolation between the two input ports is greater than 25 dB. The combining efficiency would be greater than 90 percent when the ratio of the two input power levels is two. The power combiner is machined from aluminum with E-plane split-block arrangement, and has excellent reliability. The flexibility of this design allows the combiner to be customized for combining the power from MMIC PAs with an arbitrary power output ratio. In addition, it allows combining a low-power GaAs MMIC with a high-power GaN MMIC. The arbitrary

  16. K-Band Power Enbedded Transmission Line (ETL) MMIC Amplifiers for Satellite Communication Applications

    NASA Technical Reports Server (NTRS)

    Tserng, Hua-Quen; Ketterson, Andrew; Saunier, Paul; McCarty, Larry; Davis, Steve

    1998-01-01

    The design, fabrication, and performance of K-band high-efficiency, linear power pHEMT amplifiers implemented in Embedded Transmission Line (ETL) MMIC configuration with unthinned GaAs substrate and topside grounding are reported. A three-stage amplifier achieved a power-added efficiency of 40.5% with 264 mW output at 20.2 GHz. The linear gain is 28.5 dB with 1-dB gain compression output power of 200 mW and 31% power-added efficiency. The carrier-to-third-order intermodulation ratio is approx. 20 dBc at the 1-dB compression point. A RF functional yield of more than 90% has been achieved.

  17. Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka P.; Gaier, Todd C.; Cooperrider, Joelle T.; Samoska, Lorene A.; Soria, Mary M.; ODwyer, Ian J.; Weinreb, Sander; Custodero, Brian; Owen, Heahter; Grainge, Keith; Church, Sarah; Lai, Richard; Mei, Xiaobing

    2009-01-01

    A single-pixel prototype of a W-band detector module with a digital back-end was developed to serve as a building block for large focal-plane arrays of monolithic millimeter-wave integrated circuit (MMIC) detectors. The module uses low-noise amplifiers, diode-based mixers, and a WR10 waveguide input with a coaxial local oscillator. State-of-the-art InP HEMT (high electron mobility transistor) MMIC amplifiers at the front end provide approximately 40 dB of gain. The measured noise temperature of the module, at an ambient temperature of 300 K, was found to be as low as 450 K at 95 GHz. The modules will be used to develop multiple instruments for astrophysics radio telescopes, both on the ground and in space. The prototype is being used by Stanford University to characterize noise performance at cryogenic temperatures. The goal is to achieve a 30-50 K noise temperature around 90 GHz when cooled to a 20 K ambient temperature. Further developments include characterization of the IF in-phase (I) and quadrature (Q) signals as a function of frequency to check amplitude and phase; replacing the InP low-noise amplifiers with state-of-the-art 35-nm-gate-length NGC low-noise amplifiers; interfacing the front-end module with a digital back-end spectrometer; and developing a scheme for local oscillator and IF distribution in a future array. While this MMIC is being developed for use in radio astronomy, it has the potential for use in other industries. Applications include automotive radar (both transmitters and receivers), communication links, radar systems for collision avoidance, production monitors, ground-penetrating sensors, and wireless personal networks.

  18. S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

    NASA Astrophysics Data System (ADS)

    Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

    This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

  19. Device and packaging considerations for MMIC-based millimeter-wave quasi-optical amplifier arrays

    NASA Astrophysics Data System (ADS)

    Kolias, Nicholas J.; Kazior, Thomas E.; Chen, Yan; Wright, Warren

    1999-11-01

    Practical implementation of millimeter-wave quasi-optical amplifier arrays will require high device uniformity across the array, efficient coupling to and from each gain device, good device-to-device isolation, and efficient heat removal. This paper presents techniques that address these issues for a 44 GHz MMIC-based design. To improve device uniformity, a double selective gate recess approach is introduced which results in a demonstrated 3 - 5X improvement in uniformity when compared to Raytheon's standard production pHEMT process. For packaging, direct backside interconnect technology (DBIT) is introduced as a bondwire-free scheme for connecting each amplifier to the array. This approach significantly reduces interconnect loss by reducing interconnect inductance. Measured insertion loss at 44 GHz for the DBIt transition is 0.35 dB compared to 2.3 dB for a typical bondwire transition produced on a manufacturing automated bonding machine. By eliminating bondwires which tend to radiate at millimeter wave frequencies, the DBIT approach also significantly improves the device-to-device isolation, thereby improving the array stability. The DBIT approach would not be viable if it could not effectively dissipate heat (a typical 25 watt array generates greater than 100 watts of heat). Finite element thermal analysis results are presented which show that the DBIT approach adds a tolerable 15.5 degree(s)C temperature rise over a standard solder-based MMIC die-attach to a heatsink. Thus, the DBIT approach, along with the double selective gate recess process, provides an attractive, low-loss, bondwire-free approach for producing uniform amplifier arrays.

  20. Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers

    DOEpatents

    DeGeronimo, Gianluigi

    2006-02-14

    A charge amplifier includes an amplifier, feedback circuit, and cancellation circuit. The feedback circuit includes a capacitor, inverter, and current mirror. The capacitor is coupled across the signal amplifier, the inverter is coupled to the output of the signal amplifier, and the current mirror is coupled to the input of the signal amplifier. The cancellation circuit is coupled to the output of the signal amplifier. A method of charge amplification includes providing a signal amplifier; coupling a first capacitor across the signal amplifier; coupling an inverter to the output of the signal amplifier; coupling a current mirror to the input of the signal amplifier; and coupling a cancellation circuit to the output of the signal amplifier. A front-end system for use with radiation sensors includes a charge amplifier and a current amplifier, shaping amplifier, baseline stabilizer, discriminator, peak detector, timing detector, and logic circuit coupled to the charge amplifier.

  1. Performance of a Y-Ba-Cu-O superconducting filter/GaAs low noise amplifier hybrid circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Toncich, S. S.; Chorey, C. M.; Bonetti, R. R.; Williams, A. E.

    1992-01-01

    A superconducting 7.3 GHz two-pole microstrip bandpass filter and a GaAs low noise amplifier (LNA) were combined into a hybrid circuit and characterized at liquid nitrogen temperatures. This superconducting/seismology circuit's performance was compared to a gold filter/GaAs LNA hybrid circuit. The superconducting filter/GaAs LNA hybrid circuit showed higher gain and lower noise figure than its gold counterpart.

  2. Performance of a Y-Ba-Cu-O superconducting filter/GaAs low noise amplifier hybrid circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Toncich, S. S.; Chorey, C. M.; Bonetti, R. R.; Williams, A. E.

    1992-01-01

    A superconducting 7.3 GHz two-pole microstrip bandpass filter and a GaAs low noise amplifier (LNA) were combined into an active circuit and characterized at liquid nitrogen temperatures. This superconducting/semiconducting circuit's performance was compared to a gold filter/GaAs LNA hybrid circuit. The superconducting filter/GaAs LNA hybrid circuit showed higher gain and lower noise figure than its gold counterpart.

  3. Radio astronomy ultra-low-noise amplifier for operation at 91 cm wavelength in high RFI environment

    NASA Astrophysics Data System (ADS)

    Korolev, A. M.; Zakharenko, V. V.; Ulyanov, O. M.

    2016-02-01

    An ultra-low-noise input amplifier intended for a use in a radio telescope operating at 91 cm wavelength is presented. The amplifier noise temperatures are 12.8 ± 1.5 and 10.0 ± 1.5 K at ambient temperatures of 293 and 263 K respectively. The amplifier does not require cryogenic cooling. It can be quickly put in operation thus shortening losses in the telescope observation time. High linearity of the amplifier (output power at 1 dB gain compression P1dB ≥ 22 dBm, output third order intercept point OIP3 ≥ 37 dBm) enables the telescope operation in highly urbanized and industrialized regions. To obtain low noise characteristics along with high linearity, high-electron-mobility field-effect transistors were used in parallel in the circuit developed. The transistors used in the amplifier are cost-effective and commercially available. The circuit solution is recommended for similar devices working in ultra-high frequency band.

  4. Computer simulations of low noise states in a high-power crossed-field amplifier

    SciTech Connect

    Chernin, D.P.

    1996-11-01

    A large body of experimental data has been accumulated over the past 15 years or so on the remarkable ability of both magnetrons and CFA`s to operate under certain conditions at noise levels comparable to those achieved in linear beam tubes. The physical origins of these low noise states have been the subjects of considerable speculation, fueled at least in part by results from computer simulation. While computer models have long been able to predict basic operating parameters like gain, efficiency, and peak power dissipation on electrode surfaces with reasonable accuracy, it is only within the past few years that any success could be reported on the simulation of noise. SAIC`s MASK code, a 2{1/2}-D particle-in-cell code, has been able to compute total, integrated noise power to an accuracy of {+-} a few dB in a high-power CFA, operating with a typical intra-pulse spectral noise density of {approximately}47--50 dB/MHz. Under conditions that produced low noise ({approximately}60--100 dB/MHz) in laboratory experiments, the MASK code has been, until now, unable to reproduce similar results. The present paper reports the first successful production of a very low noise state in a CFA simulation using the MASK code. The onset of this low noise state is quite sudden, appearing abruptly as the current is raised to a point near which the cathode operates as nearly emission limited. This behavior is similar to that seen in an experimentally observed transition between low noise and high noise operation in the SFD-266, a Varian[CPI] low noise CFA. Some comments are made concerning the nature of the noise as observed in the simulation and in the laboratory.

  5. Miniature MMIC Low Mass/Power Radiometer Modules for the 180 GHz GeoSTAR Array

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Tanner, Alan; Pukala, David; Lambrigtsen, Bjorn; Lim, Boon; Mei, Xiaobing; Lai, Richard

    2010-01-01

    We have developed and demonstrated miniature 180 GHz Monolithic Microwave Integrated Circuit (MMIC) radiometer modules that have low noise temperature, low mass and low power consumption. These modules will enable the Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) of the Precipitation and All-weather Temperature and Humidity (PATH) Mission for atmospheric temperature and humidity profiling. The GeoSTAR instrument has an array of hundreds of receivers. Technology that was developed included Indium Phosphide (InP) MMIC Low Noise Amplifiers (LNAs) and second harmonic MMIC mixers and I-Q mixers, surface mount Multi-Chip Module (MCM) packages at 180 GHz, and interferometric array at 180 GHz. A complete MMIC chip set for the 180 GHz receiver modules (LNAs and I-Q Second harmonic mixer) was developed. The MMIC LNAs had more than 50% lower noise temperature (NT=300K) than previous state-of-art and MMIC I-Q mixers demonstrated low LO power (3 dBm). Two lots of MMIC wafers were processed with very high DC transconductance of up to 2800 mS/mm for the 35 nm gate length devices. Based on these MMICs a 180 GHz Multichip Module was developed that had a factor of 100 lower mass/volume (16x18x4.5 mm3, 3g) than previous generation 180 GHz receivers.

  6. Cryogenically cooled low-noise amplifier for radio-astronomical observations and centimeter-wave deep-space communications systems

    NASA Astrophysics Data System (ADS)

    Vdovin, V. F.; Grachev, V. G.; Dryagin, S. Yu.; Eliseev, A. I.; Kamaletdinov, R. K.; Korotaev, D. V.; Lesnov, I. V.; Mansfeld, M. A.; Pevzner, E. L.; Perminov, V. G.; Pilipenko, A. M.; Sapozhnikov, B. D.; Saurin, V. P.

    2016-01-01

    We report a design solution for a highly reliable, low-noise and extremely efficient cryogenically cooled transmit/receive unit for a large antenna system meant for radio-astronomical observations and deep-space communications in the X band. We describe our design solution and the results of a series of laboratory and antenna tests carried out in order to investigate the properties of the cryogenically cooled low-noise amplifier developed. The transmit/receive unit designed for deep-space communications (Mars missions, radio observatories located at Lagrangian point L2, etc.) was used in practice for communication with live satellites including "Radioastron" observatory, which moves in a highly elliptical orbit.

  7. GaAs MMICs for EHF SATCOM ground terminals

    NASA Astrophysics Data System (ADS)

    Hampel, Daniel; Upton, Alastair

    The authors address the potential use of GaAs, and their benefits, for EHF ground terminals. This assessment of GaAs MMICs (monoltihic microwave integrated circuits), while concentrating on the analog RF front end, also includes some associated critical digital functions. Performance requirements and specific application areas, such as 20-GHz low-noise amplifiers and 44-GHz power amplifiers, are discussed and current state-of-the-art performance in low-noise high-electron-mobility transistors (HEMTs) and high-efficiency pseudomorphic HEMTs is presented, along with projected performance improvements over the next five years.

  8. Ka-Band Waveguide Three-Way Serial Combiner for MMIC Amplifiers

    NASA Technical Reports Server (NTRS)

    Wintucky, Edwin G.; Freeman, Jon C.; Chevalier, Christine T.

    2012-01-01

    In this innovation, the three-way combiner consists internally of two branch-line hybrids that are connected in series by a short length of waveguide. Each branch-line hybrid is designed to combine input signals that are in phase with an amplitude ratio of two. The combiner is constructed in an E-plane split-block arrangement and is precision machined from blocks of aluminum with standard WR-28 waveguide ports. The port impedances of the combiner are matched to that of a standard WR-28 waveguide. The component parts include the power combiner and the MMIC (monolithic microwave integrated circuit) power amplifiers (PAs). The three-way series power combiner is a six-port device. For basic operation, power that enters ports 3, 5, and 6 is combined in phase and appears at port 1. Ports 2 and 4 are isolated ports. The application of the three-way combiner for combining three PAs with unequal output powers was demonstrated. NASA requires narrow-band solid-state power amplifiers (SSPAs) at Ka-band frequencies with output power in the range of 3 to 5 W for radio or gravity science experiments. In addition, NASA also requires wideband, high-efficiency SSPAs at Ka-band frequencies with output power in the range of 5 to 15 W for high-data-rate communications from deep space to Earth. The three-way power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA s deep-space frequency band.

  9. The present status and future development of low noise amplifiers for satellite communications

    NASA Astrophysics Data System (ADS)

    Akinaga, W.; Handa, K.; Fujiki, Y.; Fukuda, S.; Haga, I.

    The LNAs for use in satellite communications have made remarkable progress in recent years. This paper describes the present status and future prospects of the two principal LNA types, the parametric LNA and the GaAs FET LNA, operating in the 2 GHz band through millimetric wavelength range, as regards their noise temperature characteristics. In a few years to come, the parametric LNA and the GaAs FET LNA will be coexistent, but the former will be restricted to the cryogenically cooled and the super-low-noise thermoelectrically cooled type, while the latter will occupy the majority of the LNAs for satellite communications use.

  10. Low noise parametric amplifiers for radio astronomy observations at 18-21 cm wavelength

    NASA Technical Reports Server (NTRS)

    Kanevskiy, B. Z.; Veselov, V. M.; Strukov, I. A.; Etkin, V. S.

    1974-01-01

    The principle characteristics and use of SHF parametric amplifiers for radiometer input devices are explored. Balanced parametric amplifiers (BPA) are considered as the SHF signal amplifiers allowing production of the amplifier circuit without a special filter to achieve decoupling. Formulas to calculate the basic parameters of a BPA are given. A modulator based on coaxial lines is discussed as the input element of the SHF. Results of laboratory tests of the receiver section and long-term stability studies of the SHF sector are presented.

  11. Performance of a wideband GaAs low-noise amplifier at cryogenic temperatures

    NASA Technical Reports Server (NTRS)

    Toncich, S. S.; Bhasin, K. B.; Chen, T. K.; Claspy, P. C.

    1992-01-01

    The gain and noise figure performance of a GaAs amplifier at cryogenic temperatures has been studied. Results obtained indicate that a lower noise figure and a higher gain are induced by decreasing the temperature, while no significant change in the input 1-dB compression point is observed. Repeated temperature cycling had no adverse effect on the amplifier performance.

  12. Ultrastable low-noise current amplifier: A novel device for measuring small electric currents with high accuracy

    SciTech Connect

    Drung, D.; Krause, C.; Becker, U.; Scherer, H.; Ahlers, F. J.

    2015-02-15

    An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA’s transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.

  13. Ultrastable low-noise current amplifier: A novel device for measuring small electric currents with high accuracy

    NASA Astrophysics Data System (ADS)

    Drung, D.; Krause, C.; Becker, U.; Scherer, H.; Ahlers, F. J.

    2015-02-01

    An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA's transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.

  14. Ultrastable low-noise current amplifier: a novel device for measuring small electric currents with high accuracy.

    PubMed

    Drung, D; Krause, C; Becker, U; Scherer, H; Ahlers, F J

    2015-02-01

    An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA's transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors. PMID:25725866

  15. A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

    NASA Astrophysics Data System (ADS)

    Qin, Ge; Hongqi, Tao; Xuming, Yu

    2015-12-01

    This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute's GaAs pHEMT monolithic microwave integrated circuit (MMIC) technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 : 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33-34 dBm saturated output power across the frequency range of 1.8 to 3 GHz with associated power-added efficiency of 35%-45% and very flat power gain of 25-26 dB in CW mode. The size of this MMIC is very compact with 2.7 × 2.75 mm2.

  16. In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers.

    PubMed

    Cochems, P; Kirk, A; Zimmermann, S

    2014-12-01

    Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design. PMID:25554310

  17. Low-noise wide-band amplifiers for stochastic beam cooling experiments

    SciTech Connect

    Leskovar, B.; Lo, C.C.

    1982-09-05

    Noise characteristics of the continuous-wave wide-band amplifier systems for stochastic beam cooling experiments are presented. Also, the noise performance, bandwidth capability and gain stability of components used in these amplifiers are summarized and compared in the 100 MHz to 40 GHz frequency range. This includes bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser. Measurements of the noise characteristics and scattering parameters of variety GaAs FETs as a function of ambient temperature are also given. Performance data and design information are presented on a broadband 150-500 MHz preamplifier having noise temperature of approximately 35/sup 0/K at ambient temperature of 20/sup 0/K. An analysis of preamplifier stability based on scattering parameters concept is included.

  18. Low noise, tunable Ho:fiber soliton oscillator for Ho:YLF amplifier seeding

    NASA Astrophysics Data System (ADS)

    Li, Peng; Ruehl, Axel; Bransley, Colleen; Hartl, Ingmar

    2016-06-01

    We present a passively mode-locked, tunable soliton Ho:fiber ring oscillator, optimized for seeding of holmium-doped yttrium lithium flouride (Ho:YLF) amplifiers. The oscillator is independently tunable in central wavelength and spectral width from 2040 to 2070 nm and from 5 to 10 nm, respectively. At all settings the pulse energy within the soliton is around 800 pJ. The soliton oscillator was optimized to fully meet the spectral requirements for seeding Ho:YLF amplifiers. Its Kelly sidebands are located outside the amplifier gain spectrum, resulting in a train of about 1 ps long pedestal-free pulses with relative intensity noise of only 0.13% RMS when integrated from 1 Hz to Nyquist frequency.

  19. Low-noise Raman fiber amplifier pumped by semiconductor disk laser.

    PubMed

    Chamorovskiy, A; Rautiainen, J; Rantamäki, A; Okhotnikov, O G

    2011-03-28

    A 1.3 µm Raman fiber amplifier pumped by 1.22 µm semiconductor disk laser in co-propagation geometry is demonstrated. Measured relative intensity noise of -148 dB/Hz over frequency range up to 3.5 GHz was measured at 900 mW of pump power. 9 dB gain was achieved with co-propagating pumping geometry with less than 2 dB additional noise induced by amplifier to the signal. Nearly shot-noise-limited operation of semiconductor disk laser combined with the diffraction-limited beam allows for efficient core-pumping of the single-mode fiber Raman amplifiers and represents a highly practical approach which takes full advantage of co-propagating pumping. PMID:21451669

  20. Design and measurement of an integrated wideband radio frequency low-noise amplifier for terrestrial digital television applications

    NASA Astrophysics Data System (ADS)

    Albasha, Lutfi

    2010-05-01

    In this article, the design and measurement details of a wideband low-noise amplifier (LNA) are presented. The LNA was successfully designed to operate over very high and ultra high frequency (VHF and UHF) ranges according to Digital TV (DVB-T) specifications. The novelty of the design lies in the achievement of low noise figure (NF) and high reverse isolation level across a wide bandwidth despite the resistive feedback topology. The latter was required in order to integrate the front-end block with a direct-conversion receiver. A measured large-signal compression point of P1dB = -10 dBm and a small-signal gain of 16 dB with gain flatness of <1 dB ripple, have all met commercial specifications tested over corners. The NF achieved was better than that specified and was less than 2 dB across the bandwidth. This front-end block was implemented in a commercial 0.25 μm Si BiCMOS process (f T = 20 GHz). The article discusses the measurement uncertainties imposed by the wide bandwidth, particularly in NF measurements, and the techniques adopted in this work to mitigate the errors imposed.

  1. A low-noise instrumentation amplifier with DC suppression for recording ENG signals.

    PubMed

    Paraskevopoulou, Sivylla E; Eftekhar, Amir; Kulasekeram, Nishanth; Toumazou, Christofer

    2015-08-01

    This paper presents an AC-coupled instrumentation amplifier for electroneurogram (ENG) activity recording. For this design, we evaluate gain and noise requirements based on interference sources (electrodes, power line, EMG). The circuit has been implemented in a commercially-available 0.35μm CMOS technology with total power consumption 460μW. The amplifier achieves CMRR 107 dB and integrated input referred noise 940 nV. The gain is 63 dB and the bandwidth is 0.5 Hz- 13 kHz. The chosen topology enables to minimise on-chip capacitance (only 27 pF), with a total chip area of 0.4mm2. PMID:26736847

  2. FM notch filter in front - and - behind the low noise amplifier of a Callisto Radio Spectrometer in Gauribidanur, India

    NASA Astrophysics Data System (ADS)

    Monstein, C.

    2014-03-01

    In the framework of IHY2007 a Callisto spectrometer [Benz(2004)] was installed and set into operation at the location of the solar heliograph in Gauribidanur, India. At that time the level of radio frequency interference (RFI) was amazingly low. In recent years more and more FM broadcast transmitters were installed with high power compared to the requirements of radio astronomical observations. So, the spectral observations with Callisto experienced more and more interference by these FM transmitters. Recently an FM-notch filter was installed between the low noise amplifier and Callisto, but it did not work out. The notch filter was then moved to the input of the LNA and the result was much better, as expected from theoretical concepts.

  3. Ka-band MMIC subarray technology program (Ka-Mist)

    NASA Technical Reports Server (NTRS)

    Pottenger, Warren

    1995-01-01

    The broad objective of this program was to demonstrate a proof of concept insertion of Monolithic Microwave Integrated Circuit (MMIC) device technology into an innovative (tile architecture) active phased array antenna application supporting advanced EHF communication systems. Ka-band MMIC arrays have long been considered as having high potential for increasing the capability of space, aircraft, and land mobile communication systems in terms of scan performance, data rate, link margin, and flexibility while offering a significant reduction in size, weight, and power consumption. Insertion of MMIC technology into antenna systems, particularly at millimeter wave frequencies using low power and low noise amplifiers in close proximity to the radiating elements, offers a significant improvement in the array transmit efficiency, receive system noise figure, and overall array reliability. Application of active array technology also leads to the use of advanced beamforming techniques that can improve beam agility, diversity, and adaptivity to complex signal environments.

  4. X-band MMIC amplifier with pulse-doped GaAs MESFET's

    NASA Astrophysics Data System (ADS)

    Shiga, Nobuo; Nakajima, Shigeru; Otobe, Kenji; Sekiguchi, Takeshi; Kuwata, Nobuhiro; Matsuzaki, Ken-Ichiro; Hayashi, Hideki

    1991-12-01

    The design and test of an X-band monolithic four-stage low noise amplifier (LNA) with 0.5 micron-gate pulse-doped GaAs MESFETs for application in a direct broadcast satellite (DBS) converter is presented. The key feature of the research is a detailed demonstration of the advantages of using series feedback with experiments and simulations. This LNA shows an excellent input VSWR match under 1.4 as well as a noise figure of 1.67 dB and a gain of 24 dB at 12 GHz. The noise figure, the gain and VSWRs exhibit very little bias current dependence due to the exceptional features of the pulse-doped structure FETs and the optimized circuit design. Insensitivity to bias current implies performance stability in the face of process fluctuations. Thus, the yield of chips with noise figures of less than 2.0 dB is as high as 62.5 percent, and the variations of gain and VSWR are highly uniform as well.

  5. Aspects of the design of low noise, negative resistance, reflection mode transistor amplifiers

    NASA Astrophysics Data System (ADS)

    Gardner, Peter; Paul, Dipak K.

    1991-11-01

    The authors consider the use of microwave transistors in negative resistance reflection mode and present the conditions for optimum noise performance. Possible advantages include the possibility of higher gain in the millimeter-wave region, which can be achieved by absorbing the parasitic common lead inductance into the feedback circuit designed to generate the negative resistance, and the existence of a failsafe mode of operation, in that the failure of the active device or its power supply is likely to lead a low return loss, resulting in a small insertion loss through the amplifiers, which may permit continued, although degraded, system operation. The latter potential advantage has proved to be of interest to radar system designers.

  6. Low Noise Amplifiers

    NASA Technical Reports Server (NTRS)

    Petty, S. M.; Trowbridge, D. L.

    1983-01-01

    One of the great technical challenges facing the Deep Space Network is receiving signals from a severely weight limited spacecraft hundreds of thousands to billions of kilometers from Earth. This weight limitation has always imposed strict limitations on the size of the spacecraft antenna and the amount of transmitter power radiated. The communication burden is placed upon the ground systems of the Deep Space Network which must recover an extremely weak signal in the presence of nearly overwhelming amounts of noise. Two key parameters that determine the signal to noise ratio of a received signal using a deep space station are the collecting area and efficiency of the antenna, and the amount of noise which is generated in, as well as allowed to enter in, the antenna-mounted receiver. These parameters are used to describe the relative ability of a deep space station to receive weak signals. As spacecraft to Earth communication distances have increased, the Deep Space Network engages in a relentless effort to increase the figure of merit through larger and more efficient antennas, higher frequencies, and lower system noise temperature.

  7. Low noise amplifiers

    NASA Astrophysics Data System (ADS)

    Petty, S. M.; Trowbridge, D. L.

    1983-07-01

    One of the great technical challenges facing the Deep Space Network is receiving signals from a severely weight limited spacecraft hundreds of thousands to billions of kilometers from Earth. This weight limitation has always imposed strict limitations on the size of the spacecraft antenna and the amount of transmitter power radiated. The communication burden is placed upon the ground systems of the Deep Space Network which must recover an extremely weak signal in the presence of nearly overwhelming amounts of noise. Two key parameters that determine the signal to noise ratio of a received signal using a deep space station are the collecting area and efficiency of the antenna, and the amount of noise which is generated in, as well as allowed to enter in, the antenna-mounted receiver. These parameters are used to describe the relative ability of a deep space station to receive weak signals. As spacecraft to Earth communication distances have increased, the Deep Space Network engages in a relentless effort to increase the figure of merit through larger and more efficient antennas, higher frequencies, and lower system noise temperature.

  8. A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.

    PubMed

    Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting

    2013-04-01

    In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats. PMID:23853293

  9. Design of Low-Noise Output Amplifiers for P-channel Charge-Coupled Devices Fabricated on High-Resistivity Silicon

    SciTech Connect

    Haque, S; Frost, F Dion R.; Groulx, R; Holland, S E; Karcher, A; Kolbe, W F; Roe, N A; Wang, G; Yu, Y

    2011-12-22

    We describe the design and optimization of low-noise, single-stage output amplifiers for p-channel charge-coupled devices (CCDs) used for scientific applications in astronomy and other fields. The CCDs are fabricated on high-resistivity, 4000–5000 -cm, n-type silicon substrates. Single-stage amplifiers with different output structure designs and technologies have been characterized. The standard output amplifier is designed with an n{sup +} polysilicon gate that has a metal connection to the sense node. In an effort to lower the output amplifier readout noise by minimizing the capacitance seen at the sense node, buried-contact technology has been investigated. In this case, the output transistor has a p{sup +} polysilicon gate that connects directly to the p{sup +} sense node. Output structures with buried-contact areas as small as 2 μm × 2 μm are characterized. In addition, the geometry of the source-follower transistor was varied, and we report test results on the conversion gain and noise of the various amplifier structures. By use of buried-contact technology, better amplifier geometry, optimization of the amplifier biases and improvements in the test electronics design, we obtain a 45% reduction in noise, corresponding to 1.7 e{sup -} rms at 70 kpixels/sec.

  10. A flexible CPW package for a 30 GHz MMIC amplifier. [coplanar waveguide

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.; Taub, Susan R.

    1992-01-01

    A novel package, which consists of a carrier housing, has been developed for monolithic-millimeter wave Integrated Circuit amplifiers which operate at 30 giga-Hz. The carrier has coplanar waveguide (CPW) interconnects and provides heat-sinking, tuning, and cascading capabilities. The housing provides electrical isolation, mechanical protection and a feed-thru for biasing.

  11. A high power active circulator using GaN MMIC power amplifiers

    NASA Astrophysics Data System (ADS)

    Liming, Gu; Wenquan, Che; Huang, Fan-Hsiu; Chiu, Hsien-Chin

    2014-11-01

    This paper presents a 2.4 GHz hybrid integrated active circulator consisting of three power amplifiers and three PCB-based Wilkinson power dividers. The power amplifiers were designed and fabricated in a standard 0.35-μm AlGaN/GaN HEMT technology, and combined with three traditional power dividers on FR4 using bonding wires. Due to the isolation of power dividers, the isolation between three ports is achieved; meanwhile, due to the unidirectional characteristics of the power amplifiers, the nonreciprocal transfer characteristic of the circulator is realized. The measured insertion gain of the proposed active circulator is about 2-2.7 dB at the center frequency of 2.4 GHz, the isolation between three ports is better than 20 dB over 1.2-3.4 GHz, and the output power of the designed active circulator achieves up to 20.1-21.2 dBm at the center frequency.

  12. A low-noise transimpedance amplifier for the detection of “Violin-Mode” resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

    SciTech Connect

    Lockerbie, N. A.; Tokmakov, K. V.

    2014-11-15

    This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level “Violin-Mode” (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent “noise-gain peaking” arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes’ two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m{sup −1}(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

  13. A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in Advanced Laser Interferometer Gravitational wave Observatory suspensions.

    PubMed

    Lockerbie, N A; Tokmakov, K V

    2014-11-01

    This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations-this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m(-1)(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm. PMID:25430131

  14. A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

    NASA Astrophysics Data System (ADS)

    Lockerbie, N. A.; Tokmakov, K. V.

    2014-11-01

    This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m-1(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

  15. Development of a Low-Noise High Common-Mode-Rejection Instrumentation Amplifier. M.S. Thesis

    NASA Technical Reports Server (NTRS)

    Rush, Kenneth; Blalock, T. V.; Kennedy, E. J.

    1975-01-01

    Several previously used instrumentation amplifier circuits were examined to find limitations and possibilities for improvement. One general configuration is analyzed in detail, and methods for improvement are enumerated. An improved amplifier circuit is described and analyzed with respect to common mode rejection and noise. Experimental data are presented showing good agreement between calculated and measured common mode rejection ratio and equivalent noise resistance. The amplifier is shown to be capable of common mode rejection in excess of 140 db for a trimmed circuit at frequencies below 100 Hz and equivalent white noise below 3.0 nv/square root of Hz above 1000 Hz.

  16. First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

    NASA Technical Reports Server (NTRS)

    Fung, A. K.; Gaier, T.; Samoska, L.; Deal, W. R.; Radisic, V.; Mei, X. B.; Yoshida, W.; Liu, P. S.; Uyeda, J.; Barsky, M.; Lai, R.

    2008-01-01

    Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.

  17. Ka-band MMIC subarray technology program (Ka-Mist)

    NASA Astrophysics Data System (ADS)

    Pottinger, W.

    1995-09-01

    Ka-band monolithic microwave integrated circuit (MMIC) arrays have been considered as having high potential for increasing the capability of space, aircraft, and land mobile communication systems in terms of scan performance, data rate, link margin, and flexibility while offering a significant reduction in size, weight, and power consumption. Insertion of MMIC technology into antenna systems, particularly at millimeter wave frequencies using low power and low noise amplifiers in closed proximity to the radiating elements, offers a significant improvement in the array transmit efficiency, receive system noise figure, and overall array reliability. Application of active array technology also leads to the use of advanced beamforming techniques that can improve beam agility, diversity, and adaptivity to complex signal environments. The objective of this program was to demonstrate the technical feasibility of the 'tile' array packaging architecture at EHF via the insertion of 1990 MMIC technology into a functional tile array or subarray module. The means test of this objective was to demonstrate and deliver to NASA a minimum of two 4 x 4 (16 radiating element) subarray modules operating in a transmit mode at 29.6 GHz. Available (1990) MMIC technology was chosen to focus the program effort on the novel interconnect schemes and packaging requirements rather than focusing on MMIC development. Major technical achievements of this program include the successful integration of two 4 x 4 subarray modules into a single antenna array. This 32 element array demonstrates a transmit EIRP of over 300 watts yielding an effective directive power gain in excess of 55 dB at 29.63 GHz. The array has been actively used as the transmit link in airborne/terrestrial mobile communication experiments accomplished via the ACTS satellite launched in August 1993.

  18. Ka-Band MMIC Subarray Technology Program (Ka-Mist)

    NASA Technical Reports Server (NTRS)

    Pottinger, W.

    1995-01-01

    Ka-band monolithic microwave integrated circuit (MMIC) arrays have been considered as having high potential for increasing the capability of space, aircraft, and land mobile communication systems in terms of scan performance, data rate, link margin, and flexibility while offering a significant reduction in size, weight, and power consumption. Insertion of MMIC technology into antenna systems, particularly at millimeter wave frequencies using low power and low noise amplifiers in closed proximity to the radiating elements, offers a significant improvement in the array transmit efficiency, receive system noise figure, and overall array reliability. Application of active array technology also leads to the use of advanced beamforming techniques that can improve beam agility, diversity, and adaptivity to complex signal environments. The objective of this program was to demonstrate the technical feasibility of the 'tile' array packaging architecture at EHF via the insertion of 1990 MMIC technology into a functional tile array or subarray module. The means test of this objective was to demonstrate and deliver to NASA a minimum of two 4 x 4 (16 radiating element) subarray modules operating in a transmit mode at 29.6 GHz. Available (1990) MMIC technology was chosen to focus the program effort on the novel interconnect schemes and packaging requirements rather than focusing on MMIC development. Major technical achievements of this program include the successful integration of two 4 x 4 subarray modules into a single antenna array. This 32 element array demonstrates a transmit EIRP of over 300 watts yielding an effective directive power gain in excess of 55 dB at 29.63 GHz. The array has been actively used as the transmit link in airborne/terrestrial mobile communication experiments accomplished via the ACTS satellite launched in August 1993.

  19. Dose rate dependence of the current noise performance of an ultra-low noise precision bipolar operational amplifier

    SciTech Connect

    Hiemstra, D.M.

    1999-12-01

    The dose rate dependence of the current noise of a bipolar operational amplifier is presented. Total current noise performance degrades linearly with increasing dose rate. Generation-recombination, white and 1/f spectral components contribute to the degradation. The generation-recombination component is the most significant contributor to dose rate dependent current noise degradation.

  20. Ka-Band SiGe Receiver Front-End MMIC for Transponder Applications

    NASA Technical Reports Server (NTRS)

    Venkatesan, Jaikrishna; Mysoor, Narayan R.; Hashemi, Hassein; Aflatouni, Firooz

    2010-01-01

    A fully integrated, front-end Ka-band monolithic microwave integrated circuit (MMIC) was developed that houses an LNA (low noise amplifier) stage, a down-conversion stage, and output buffer amplifiers. The MMIC design employs a two-step quadrature down-conversion architecture, illustrated in the figure, which results in improved quality of the down-converted IF quadrature signals. This is due to the improved sensitivity of this architecture to amplitude and phase mismatches in the quadrature down-conversion process. Current sharing results in reduced power consumption, while 3D-coupled inductors reduce the chip area. Improved noise figure is expected over previous SiGe-based, frontend designs

  1. Low-noise RF-amplifier-free slab-coupled optical waveguide coupled optoelectronic oscillators: physics and operation.

    PubMed

    Loh, William; Yegnanarayanan, Siva; Plant, Jason J; O'Donnell, Frederick J; Grein, Matthew E; Klamkin, Jonathan; Duff, Shannon M; Juodawlkis, Paul W

    2012-08-13

    We demonstrate a 10-GHz RF-amplifier-free slab-coupled optical waveguide coupled optoelectronic oscillator (SCOW-COEO) system operating with low phase-noise (<-115 dBc/Hz at 1 kHz offset) and large sidemode suppression (>70 dB measurement-limited). The optical pulses generated by the SCOW-COEO exhibit 26.8-ps pulse width (post compression) with a corresponding spectral bandwidth of 0.25 nm (1.8X transform-limited). We also investigate the mechanisms that limit the performance of the COEO. Our measurements indicate that degradation in the quality factor (Q) of the optical cavity significantly impacts COEO phase-noise through increases in the optical amplifier relative intensity noise (RIN). PMID:23038585

  2. Low noise gain-clamped L-band erbium-doped fiber amplifier by utilizing fiber Bragg grating

    NASA Astrophysics Data System (ADS)

    Wang, Tianshu; Guo, Yubin; Yan, Hongwei; Wang, Yuhang; Wang, Ke

    2006-11-01

    A novel gain-clamped long wavelength band (L-band) erbium-doped fiber amplifier (EDFA) is proposed and experimented by using a fiber Bragg grating (FBG) at the input end of the amplifier. This design provides a good gain clamping and decreases noise effectively. It uses two sections of erbium-doped fiber (EDF) pumped by a 1480-nm laser diode (LD) for higher efficiency and lower noise figure (NF). The gain is clamped at 23 dB with a variation of 0.5 dB from input signal power of -30 to -8 dBm for 1589 nm and NF below 5 dB is obtained. At the longer wavelength in L-band higher gain is also obtained and the gain is clamped at 16 dB for 1614 nm effectively. Because the FBG injects a portion of backward amplified spontaneous emission (ASE) back into the system, the gain enhances 5 dB with inputting small signal.

  3. SEMICONDUCTOR INTEGRATED CIRCUITS A 0.18 μm CMOS dual-band low power low noise amplifier for a global navigation satellite system

    NASA Astrophysics Data System (ADS)

    Bing, Li; Yiqi, Zhuang; Zhenrong, Li; Gang, Jin

    2010-12-01

    This paper presents a dual-band low noise amplifier for the receiver of a global navigation satellite system. The differences between single band and multi-band design methods are discussed. The relevant parameter analysis and the details of circuit design are presented. The test chip was implemented in a TSMC 0.18 μm 1P4M RF CMOS process. The LNA achieves a gain of 16.8 dB/18.9 dB on 1.27 GHz/1.575 GHz. The measured noise figure is around 1.5-1.7 dB on both bands. The LNA consumes less than 4.3 mA of current from a 1.8 V power supply. The measurement results show consistency with the design. And the LNA can fully satisfy the demands of the GNSS receiver.

  4. A 3.5-4.5 GHz Complementary Metal-Oxide-Semiconductor Ultrawideband Receiver Frontend Low-Noise Amplifier with On-Chip Integrated Antenna for Interchip Communication

    NASA Astrophysics Data System (ADS)

    Azhari, Afreen; Kimoto, Kentaro; Sasaki, Nobuo; Kikkawa, Takamaro

    2010-04-01

    Chip-to-chip ultrawideband (UWB) wireless interconnections are essential for reducing resistance capacitance (RC) delay in wired interconnections and three-dimensional (3D) highly integrated packaging. In this study, we demonstrated a wireless interchip signal transmission between two on-chip meander antennas on printed circuit board (PCB) for 1 to 20 mm transmission distances where the low power gain of each antenna due to a lossy Si substrate has been amplified by a low-noise amplifier (LNA). The measured result shows that the LNA produces 26 dB of improvement in antenna power gain at 4.5 GHz on a lossy Si substrate. Moreover, a Gaussian monocycle pulse with a center frequency of 2.75 GHz was also received by an on-chip antenna and amplified by the LNA. The LNA was integrated with an on-chip antenna on a Si substrate with a resistivity of 10 Ω·cm using 180 nm complementary metal-oxide-semiconductor (CMOS) technology. The investigated system is required for future single chip transceiver front ends, integrated with an on-chip antenna for 3D mounting on a printed circuit (PC) board.

  5. Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions

    NASA Technical Reports Server (NTRS)

    Padmanabhan, Sharmila; Fung, King Man; Kangaslahti, Pekka P.; Peralta, Alejandro; Soria, Mary M.; Pukala, David M.; Sin, Seth; Samoska, Lorene A.; Sarkozy, Stephen; Lai, Richard

    2012-01-01

    Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to

  6. Cryogenic 160-GHz MMIC Heterodyne Receiver Module

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene A.; Soria, Mary M.; Owen, Heather R.; Dawson, Douglas E.; Kangaslahti, Pekka P.; Gaier, Todd C.; Voll, Patricia; Lau, Judy; Sieth, Matt; Church, Sarah

    2011-01-01

    A cryogenic 160-GHz MMIC heterodyne receiver module has demonstrated a system noise temperature of 100 K or less at 166 GHz. This module builds upon work previously described in Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation (NPO-47664), NASA Tech Briefs, Vol. 35, No. 8 (August 2011), p. 27. In the original module, the local oscillator signal was saturating the MMIC low-noise amplifiers (LNAs) with power. In order to suppress the local oscillator signal from reaching the MMIC LNAs, the W-band (75 110 GHz) signal had to be filtered out before reaching 140 170 GHz. A bandpass filter was developed to cover 120 170 GHz, using microstrip parallel-coupled lines to achieve the desired filter bandwidth, and ensure that the unwanted W-band local oscillator signal would be sufficiently suppressed. With the new bandpass filter, the entire receiver can work over the 140 180-GHz band, with a minimum system noise temperature of 460 K at 166 GHz. The module was tested cryogenically at 20 K ambient temperature, and it was found that the receiver had a noise temperature of 100 K over an 8-GHz bandwidth. The receiver module now includes a microstrip bandpass filter, which was designed to have a 3-dB bandwidth of approximately 120-170 GHz. The filter was fabricated on a 3-mil-thick alumina substrate. The filter design was based on a W-band filter design made at JPL and used in the QUIET (Q/U Imaging ExperimenT) radiometer modules. The W-band filter was scaled for a new center frequency of 150 GHz, and the microstrip segments were changed accordingly. Also, to decrease the bandwidth of the resulting scaled design, the center gaps between the microstrip lines were increased (by four micrometers in length) compared to the gaps near the edges. The use of the 150-GHz bandpass filter has enabled the receiver module to function well at room temperature. The system noise temperature was measured to be less than 600 K (at room temperature) from 154 to 168 GHz

  7. Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers

    NASA Astrophysics Data System (ADS)

    Gupta, Neha; Chaujar, Rishu

    2016-08-01

    In this paper, we have investigated the small-signal behaviour and RF noise performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET, and the results so obtained are simultaneously compared with SiNW and conventional MOSFET at THz frequency range. This work examines reflection and transmission coefficients, noise conductance, minimum noise figure and cross-correlation factor. Results reveal significant reduction in input/output reflection coefficient and an increase in forward/reverse transmission coefficient owing to improved transconductance in GEWE-SiNW in comparison with conventional counterparts. It is also observed that minimum noise figure and noise conductance of GEWE-SiNW is reduced by 17.4 and 31.2 %, respectively, in comparison with SiNW, thus fortifying its potential application for low-noise amplifiers (LNAs) at radio frequencies. Moreover, the efficacy of gate metal workfunction engineering is also studied and the results validate that tuning of workfunction difference results further improvement in device small-signal behaviour and noise performance.

  8. MMIC Replacement for Gunn Diode Oscillators

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.; Porterfield, David

    2011-01-01

    An all-solid-state replacement for high-frequency Gunn diode oscillators (GDOs) has been proposed for use in NASA s millimeter- and submillimeter-wave sensing instruments. Highly developed microwave oscillators are used to achieve a low-noise and highly stable reference signal in the 10-40-GHz band. Compact amplifiers and high-power frequency multipliers extend the signal to the 100-500-GHz band with minimal added phase noise and output power sufficient for NASA missions. This technology can achieve improved output power and frequency agility, while maintaining phase noise and stability comparable to other GDOs. Additional developments of the technology include: a frequency quadrupler to 145 GHz with 18 percent efficiency and 15 percent fixed tuned bandwidth; frequency doublers featuring 124, 240, and 480 GHz; an integrated 874-GHz subharmonic mixer with a mixer noise temperature of 3,000 K DSB (double sideband) and mixer conversion loss of 11.8 dB DSB; a high-efficiency frequency tripler design with peak output power of 23 mW and 14 mW, and efficiency of 16 and 13 percent, respectively; millimeter-wave integrated circuit (MMIC) power amplifiers to the 30-40 GHz band with high DC power efficiency; and an 874-GHz radiometer suitable for airborne observation with state-of-the-art sensitivity at room temperature and less than 5 W of total power consumption.

  9. MMICs with Radial Probe Transitions to Waveguides

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Chattopadhyay, Goutam; Pukala, David; Soria, Mary; Fung, King Man; Gaier, Todd; Radisic, Vesna; Lai, Richard

    2009-01-01

    A document presents an update on the innovation reported in Integrated Radial Probe Transition From MMIC to Waveguide (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. To recapitulate: To enable operation or testing of a monolithic microwave integrated circuit (MMIC), it is necessary to mount the MMIC in a waveguide package that typically has cross-sectional waveguide dimensions of the order of a few hundred microns. A radial probe transition between an MMIC operating at 340 GHz and a waveguide had been designed (but not yet built and tested) to be fabricated as part of a monolithic unit that would include the MMIC. The radial probe could readily be integrated with an MMIC amplifier because the design provided for fabrication of the transition on a substrate of the same material (InP) and thickness (50 m) typical of substrates of MMICs that can operate above 300 GHz. As illustrated in the updated document by drawings, photographs, and plots of test data, the concept has now been realized by designing, fabricating, and testing several MMIC/radial- probe integrated-circuit chips and designing and fabricating a waveguide package to contain each chip.

  10. Integrated Radial Probe Transition From MMIC to Waveguide

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Chattopadhyay, Goutam

    2007-01-01

    A radial probe transition between a monolithic microwave integrated circuit (MMIC) and a waveguide has been designed for operation at frequency of 340 GHz and to be fabricated as part of a monolithic unit that includes the MMIC. Integrated radial probe transitions like this one are expected to be essential components of future MMIC amplifiers operating at frequencies above 200 GHz. While MMIC amplifiers for this frequency range have not yet been widely used because they have only recently been developed, there are numerous potential applications for them-- especially in scientific instruments, test equipment, radar, and millimeter-wave imaging systems for detecting hidden weapons.

  11. Low-noise cryogenic transmission line

    NASA Technical Reports Server (NTRS)

    Norris, D.

    1987-01-01

    New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.

  12. K-Band Si/SiGe HBT MMIC Amplifiers Using Lumped Passive Components with a Micromachined Structure

    NASA Technical Reports Server (NTRS)

    Lu, Liang-Hung; Rieh, Jae-Sung; Bhattacharya, Pallab; Katechi, Linda P. B.; Croke, E. T.; Ponchak, George E.; Alterovitz, Samuel A.

    2000-01-01

    Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92 x 0.67 sq mm.

  13. Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in Gallium Nitride HFET Technology Using the Doherty technique

    NASA Astrophysics Data System (ADS)

    Seneviratne, Sashieka

    With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are

  14. Design and implementation of a 1-V transformer magnetic feedback low-noise amplifier (LNA) at 5-6 GHz, in a 90 nm complementary metal-oxide-semiconductor (CMOS) process

    NASA Astrophysics Data System (ADS)

    Kytonaki, Eleni-Sotiria; Simitsakis, Paschalis; Bazigos, Antonios; Papananos, Yannis

    2011-02-01

    In this study, a low-noise amplifier (LNA) suitable for low-voltage operation is presented. The LNA operates at a frequency range between 5 and 6 GHz. Its topology exploits magnetic feedback to achieve high reverse isolation and low noise performance without a significant degradation of the gain and linearity of the circuit. The design has been fabricated, considering full electrostatic discharge protection, in a modern 90 nm complementary metal-oxide-semiconductor process. The measured performance, at 5.4 GHz, shows a reverse isolation of -17.3 dB, a gain of 10.4 dB, a noise figure of 0.98 dB and an input intercept point of 1.4 dBm. The circuit dissipates 12.5 mW from a 1 V supply, while it occupies 0.162 mm2 of the die area.

  15. Waveguide Transition for Submillimeter-Wave MMICs

    NASA Technical Reports Server (NTRS)

    Leong, Kevin M.; Deal, William R.; Radisic, Vesna; Mei, Xiaobing; Uyeda, Jansen; Lai, Richard; Fung, King Man; Gaier, Todd C.

    2009-01-01

    An integrated waveguide-to-MMIC (monolithic microwave integrated circuit) chip operating in the 300-GHz range is designed to operate well on high-permittivity semiconductor substrates typical for an MMIC amplifier, and allows a wider MMIC substrate to be used, enabling integration with larger MMICs (power amplifiers). The waveguide-to- CBCPW (conductor-backed coplanar waveguide) transition topology is based on an integrated dipole placed in the E-plane of the waveguide module. It demonstrates low loss and good impedance matching. Measurement and simulation demonstrate that the loss of the transition and waveguide loss is less than 1-dB over a 340-to-380-GHz bandwidth. A transition is inserted along the propagation direction of the waveguide. This transition uses a planar dipole aligned with the maximum E-field of the TE10 waveguide mode as an inter face between the waveguide and the MMIC. Mode conversion between the coplanar striplines (CPS) that feed the dipole and the CBCPW transmission line is accomplished using a simple air-bridge structure. The bottom side ground plane is truncated at the same reference as the top-side ground plane, leaving the end of the MMIC suspended in air.

  16. MMIC Package for Millimeter Wave Frequency

    NASA Technical Reports Server (NTRS)

    Bharj, Sarjit Singh; Yuan, Steve

    1997-01-01

    Princeton Microwave Technology has successfully demonstrated the transfer of technology for the MMIC package. During this contract the package design was licensed from Hughes Aircraft Company for manufacture within the U.S. A major effort was directed towards characterization of the ceramic material for its dielectric constant and loss tangent properties. After selection of a ceramic tape, the high temperature co-fired ceramic package was manufactured in the U.S. by Microcircuit Packaging of America, Inc. Microwave measurements of the MMIC package were conducted by an intercontinental microwave test fixture. The package demonstrated a typical insertion loss of 0.5 dB per transition up to 32 Ghz and a return loss of better than 15 db. The performance of the package has been demonstrated from 2 to 30 Ghz by assembling three different MMIC amplifiers. Two of the MMIC amplifiers were designed for the 26 Ghz to 30 Ghz operation while the third MMIC was a distributed amplifier from 2 to 26.5 Ghz. The measured gain of the amplifier is consistent with the device data. The package costs are substantially lower than comparable packages available commercially. Typically the price difference is greater than a factor of three. The package cost is well under $5.00 for a quantity of 10,000 pieces.

  17. Broadband Characterization of a 100 to 180 GHz Amplifier

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Deal, W. R.; Mei, X. B.; Lai, R.

    2007-01-01

    Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).

  18. A design concept for an MMIC microstrip phased array

    NASA Technical Reports Server (NTRS)

    Lee, R. Q.; Smetana, J.; Acosta, R.

    1986-01-01

    A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka band advanced satellite communication antenna systems. The proposed design concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required. The proposed design concept takes into consideration the RF characteristics and actual phyical dimensions of the MMIC devices. Also, solutions to spatial constraints and interconnections associated with currently available packaging designs are discussed. Finally, the design of the microstrip radiating elements and their radiation characteristics are examined.

  19. Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka P.; Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Lau, Judy M.; Sieth, Matthew M.; VanWinkle, Daniel; Tantawi, Sami

    2011-01-01

    HEMT-based receiver arrays with excellent noise and scalability are already starting to be manufactured at 100 GHz, but the advances in technology should make it possible to develop receiver modules with even greater operation frequency up to 200 GHz. A prototype heterodyne amplifier module has been developed for operation from 140 to 170 GHz using monolithic millimeter-wave integrated circuit (MMIC) low-noise InP high electron mobility transistor (HEMT) amplifiers. The compact, scalable module is centered on the 150-GHz atmospheric window using components known to operate well at these frequencies. Arrays equipped with hundreds of these modules can be optimized for many different astrophysical measurement techniques, including spectroscopy and interferometry. This module is a heterodyne receiver module that is extremely compact, and makes use of 35-nm InP HEMT technology, and which has been shown to have excellent noise temperatures when cooled cryogenically to 30 K. This reduction in system noise over prior art has been demonstrated in commercial mixers (uncooled) at frequencies of 160-180 GHz. The module is expected to achieve a system noise temperature of 60 K when cooled. An MMIC amplifier module has been designed to demonstrate the feasibility of expanding heterodyne amplifier technology to the 140 to 170-GHz frequency range for astronomical observations. The miniaturization of many standard components and the refinement of RF interconnect technology have cleared the way to mass-production of heterodyne amplifier receivers, making it a feasible technology for many large-population arrays. This work furthers the recent research efforts in compact coherent receiver modules, including the development of the Q/U Imaging ExperimenT (QUIET) modules centered at 40 and 90 GHz, and the production of heterodyne module prototypes at 90 GHz.

  20. EHF low-noise FET receiver

    NASA Technical Reports Server (NTRS)

    Schellenberg, J. M.; Watkins, E. T.

    1983-01-01

    Extremely high frequency (EHF) receivers for military and NASA programs must be small, lightweight, and highly reliable. In connection with recent advances in the development of mm-wave FET devices and circuits, a basis has been obtained for the eventual replacement of diode mixer front-ends by FET preamplifiers in receivers up to 94 GHz. By placing a low noise amplifier in front of the mixer it is possible to achieve a lower system noise figure than that found in conventional mm-wave receivers. A broader bandwidth can also be provided. Attention is given to the receiver configuration, a low noise FET amplifier, an image rejection filter, a dual-gate FET mixer, a FET local oscillator, and a FET receiver.

  1. Millimeter wave band ultra wideband transmitter MMIC

    NASA Astrophysics Data System (ADS)

    Ling, Jin; Rolland, Nathalie

    2015-09-01

    This paper presents a new millimeter-wave (MMW) ultra wideband (UWB) transmitter MMIC which has been developed in an OMMIC 0.1 μm GaAs PHEMT foundry process (ft = 100 GHz) for 22-29 GHz vehicular radar systems. The transmitter is composed of an MMW negative resistance oscillator (NRO), a power amplifier (PA), and two UWB pulse generators (PGs). In order to convert the UWB pulse signal to MMW frequency and reduce the total power consumption, the MMW NRO is driven by one of the UWB pulse generators and the power amplifier is triggered by another UWB pulse generator. The main advantages of this transmitter are: new design, simple architecture, high-precision distance measurements, infinite ON/OFF switch ratio, and low power consumption. The total power consumption of the transmitter MMIC is 218 mW with a peak output power of 5.5 dBm at 27 GHz.

  2. Ultra-low-noise microwave amplifiers

    NASA Technical Reports Server (NTRS)

    Clauss, R. C.; Trowbridge, D.

    1980-01-01

    The highlights of 20 years of maser use and development are presented. Masers discussed include cavity, traveling wave, K band, and S band. Noise temperatures measured since 1960 are summarized. Use of masers in the Deep Space Network is presented. Costs associated with the construction of masers systems are given.

  3. A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

    NASA Technical Reports Server (NTRS)

    Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

    1987-01-01

    A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

  4. A 5.4-9.2 GHz 19.5 dB Complementary Metal-Oxide-Semiconductor Ultrawide-Band Receiver Front-End Low-Noise Amplifier

    NASA Astrophysics Data System (ADS)

    Azhari, Afreen; Kubota, Shinichi; Toya, Akihiro; Sasaki, Nobuo; Kikkawa, Takamaro

    2011-04-01

    In this work, we present an ultrawide-band (UWB) complementary metal-oxide-semiconductor (CMOS) low-noise amplifier (LNA) for wireless communication in the upper UWB band, that is, from 5.4-9.2 GHz bandwidth with a wide-band 50 Ω input matching network in front of the LNA. A three-stage cascode-topology-based LNA with high-transconductance MOS transistors, was employed to improve the voltage gain up to 23 dB at 7.5 GHz, with 4.5-9.2 GHz 3 dB bandwidth. The maximum output power S21 was 19.5 dB at 7.3 GHz, with 5.4-9.2 GHz 3 dB bandwidth. The input matching circuit was designed with a reduced number of passive elements, resulting in an input reflection coefficient S11 of less than -10 dB from 4.5-9.2 GHz. The noise figure of the LNA was as low as 3.5 dB and the input-referred third-order intercept point (IIP3) was -8 dBm. The LNA has output reflection coefficient S22 of less than -10 dB from 5-7 GHz and a good reverse isolation, that is, S12 of < -45 dB in the entire UWB, due to a cascode topology. The LNA was fabricated using 180 nm CMOS technology, which consumes 56 mW power at 1.8 V power supply. In this paper, we also demonstrate a wireless communication of 7 GHz Gaussian monocycle pulse (GMP) by horn antennas and the LNA from 20 cm transmission distance.

  5. MMIC technology for advanced space communications systems

    NASA Technical Reports Server (NTRS)

    Downey, A. N.; Connolly, D. J.; Anzic, G.

    1984-01-01

    The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected.

  6. V-band monolithic two stage HEMT amplifiers

    NASA Astrophysics Data System (ADS)

    Aust, M.; Yonaki, J.; Nakano, K.; Berenz, J.; Dow, G.

    Two different types of HEMT (high-electron-mobility transistor) monolithic low-noise amplifiers (LNAs) using AlGaAs/GaAs and pseudomorphic InGaAs/GaAs materials have been developed and have demonstrated excellent performance at 60 GHz. These monolithic LNAs have achieved noise figures of 5 dB, as well as associated gains of 11 dB. These two-stage circuits both utilize 0.2- x 60-micron HEMT devices for both bandpass and low-pass circuit topologies. Noise figures as low as 4.5 dB have been observed for single-stage MMIC- (monolithic-microwave-integrated-circuit) implemented LNAs, and gains in excess of 20 dB have been observed for three-stage versions of this amplifier with a 5-dB noise figure in the V band. This result represents the state-of-the art monolithic HEMT amplifier performance for AlGaAs and pseudomorphic InGaAs materials. This MMIC amplifier can occupy about less than one-third the size of existing MIC hybrid V-band LNAs. This represents a significant size reduction and cost saving due to repeatable circuit performance with monolithic technology. The chip sizes are both 1.6 x 2.7 mm for these two-stage amplifiers.

  7. MMIC integration technology investigation

    NASA Technical Reports Server (NTRS)

    Kapoor, Vik J.

    1991-01-01

    Final technical report on NASA cooperative agreement NCC-167 is presented for the period March 5, 1990 to June 15, 1991. The following topics are included: (1) four to one power combiner for 20 GHz phased array antenna using RADC MMIC phase shifters; and (2) testing of indium phosphide devices.

  8. 60 GHz low noise wideband receiver

    NASA Technical Reports Server (NTRS)

    Knust-Graichen, R. A.; Bui, L.

    1985-01-01

    The printed circuit and GaAs beam lead technology-based, low noise integrated receiver presented was developed for low cost space communications and operates in the 59-64 GHz range, using a phase-locked Gunn oscillator at 51.5 GHz. An IF output of 7.5-12.5 GHz is obtained. With the exception of the IF amplifier, and of the E-plane technology-based RF preselect filter, all circuits of the device employ suspended stripline construction.

  9. V-band pseudomorphic HEMT MMIC phased array components for space communications

    NASA Technical Reports Server (NTRS)

    Lan, G. L.; Pao, C. K.; Wu, C. S.; Hu, M.; Downey, Alan N.

    1992-01-01

    Recent advances in pseudomorphic high-electron-mobility transistor (PMHEMT) monolithic microwave integrated circuit (MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. The development of V-band PMHEMT/MMIC components including power amplifiers and phase shifters is described. For the single-stage MMIC power amplifier employing a 200 micron PMHEMT, we achieved 151.4 mW output power (757.0 mW/mm) with 1.8 dB associated gain and 26.4 percent power-added efficiency at 60 GHz. A two-stage MMIC amplifier utilizing the same devices demonstrated small-signal gain as high as 15 dB at 58 GHz. And, for the phase shifter, a four-bit phase shifter with less than 8 dB insertion loss from 61 to 63 GHz was measured.

  10. 164-GHz MMIC HEMT Frequency Doubler

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Radisic, Vesna; Micovic, Miro; Hu, Ming; Janke, Paul; Ngo, Catherine; Nguyen, Loi; Morgan, Matthew

    2003-01-01

    A monolithic microwave integrated circuit (MMIC) that includes a high-electron-mobility transistor (HEMT) has been developed as a prototype of improved frequency doublers for generating signals at frequencies greater than 100 GHz. Signal sources that operate in this frequency range are needed for a variety of applications, notably including general radiometry and, more specifically, radiometric remote sensing of the atmosphere. Heretofore, it has been common practice to use passive (diode-based) frequency multipliers to obtain frequencies greater than 100 GHz. Unfortunately, diode-based frequency multipliers are plagued by high DC power consumption and low conversion efficiency. Moreover, multiplier diodes are not easily integrated with such other multiplier-circuit components as amplifiers and oscillators. The goals of developing the present MMIC HEMT frequency doubler were (1) to utilize the HEMT as an amplifier to increase conversion efficiency (more precisely, to reduce conversion loss), thereby increasing the output power for a given DC power consumption or, equivalently, reducing the DC power consumption for a given output power; and (2) to provide for the integration of amplifier and oscillator components on the same chip. The MMIC frequency doubler (see Figure 1) contains an AlInAs/GaInAs/InP HEMT biased at pinch-off to make it function as a class-B amplifier (meaning that it conducts in half-cycle pulses). Grounded coplanar waveguides (GCPWs) are used as impedance-matching transmission lines. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. Another combination of GCPWs also serves both as a low-pass filter to suppress undesired oscillations at frequencies below 60 GHz and as a DC blocker. Large decoupling capacitors and epitaxial resistors are added in the drain and gate lines to suppress bias oscillations. At the output terminal, the fundamental frequency is suppressed by a quarter-wave open stub, which presents

  11. Low-noise nozzle valve

    NASA Technical Reports Server (NTRS)

    Gwin, Hal S. (Inventor); Aaron, James (Inventor)

    1990-01-01

    A low noise, variable discharage area, valve is constructed having opposed recesses within which a pair of gates are slidably disposed. Each of the gates is provided with upstream edges having a radius thereon, the radius enabling smooth, accelerated, low noise flow therebetween. The gates are further provided with tracks along each side, which in turn slide along splines set in the side walls of the valve. A threaded rod which rotates in a threaded insert in a rear wall of each of the gates, serves to move the gates within their respective recesses.

  12. Low-noise nozzle valve

    NASA Astrophysics Data System (ADS)

    Gwin, Hal S.; Aaron, James

    1990-09-01

    A low noise, variable discharage area, valve is constructed having opposed recesses within which a pair of gates are slidably disposed. Each of the gates is provided with upstream edges having a radius thereon, the radius enabling smooth, accelerated, low noise flow therebetween. The gates are further provided with tracks along each side, which in turn slide along splines set in the side walls of the valve. A threaded rod which rotates in a threaded insert in a rear wall of each of the gates, serves to move the gates within their respective recesses.

  13. Ultra low-noise charge coupled device

    NASA Technical Reports Server (NTRS)

    Janesick, James R. (Inventor)

    1993-01-01

    Special purpose CCD designed for ultra low-noise imaging and spectroscopy applications that require subelectron read noise floors, wherein a non-destructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are possible in this manner. In a preferred embodiment of the invention, a three-phase CCD horizontal register is used to bring a pixel charge packet to an input gate adjacent a floating gate amplifier. The charge is then repeatedly clocked back and forth between the input gate and the floating gate. Each time the charge is injected into the potential well of the floating gate, it is sensed non-destructively. The floating gate amplifier is provided with a reference voltage of a fixed value and a pre-charge gate for resetting the amplifier between charge samples to a constant gain. After the charge is repeatedly sampled a selected number of times, it is transferred by means of output gates, back into the horizontal register, where it is clocked in a conventional manner to a diffusion MOSFET amplifier. It can then be either sampled (destructively) one more time or otherwise discarded.

  14. Support assembly for cryogenically coolable low-noise choke waveguide

    NASA Technical Reports Server (NTRS)

    Mccrea, F. E. (Inventor)

    1980-01-01

    A compact cryogenically coolable choked waveguide for low-noise input coupling into a cryogenically cooled device, such as a maser or parametric amplifier, utilizes coaxial stainless steel support tubes surrounding the waveguide and connected in cascade to provide a folded low thermal conduction path. The edges of the tubes connected are welded.

  15. Design of matching networks for low noise preamplifiers.

    PubMed

    Reykowski, A; Wright, S M; Porter, J R

    1995-06-01

    This paper discusses matching networks that minimize inductive coupling between the antennas within an array while simultaneously insuring minimum noise contributions from preamplifiers. Typical low noise preamplifier designs require a strong mismatch between the source impedance and the amplifier input impedance (reflection coefficient close to one) to achieve optimal noise performance. This is in contrast to the familiar impedance match known from communication theory where input and source impedances have complex conjugate values for maximizing the power transfer from source to amplifier. The high input reflection coefficient of low noise amplifiers can be exploited to reduce antenna currents by using lossless impedance transformations to create a high impedance at the coil terminals while simultaneously maintaining a low noise figure for the amplifier. The networks presented here constitute an improvement over previous work because they give additional freedoms regarding the values of the network components and the amplifier input impedance. The technique has been formalized and coded in MathCad, making the design of realizable networks a simple process. PMID:7651124

  16. The 30 GHz communications satellite low noise receiver

    NASA Astrophysics Data System (ADS)

    Steffek, L. J.; Smith, D. W.

    1983-10-01

    A Ka-band low noise front end in proof of concept (POC) model form for ultimate spaceborne communications receiver deployment was developed. The low noise receiver consists of a 27.5 to 30.0 GHz image enhanced mixer integrated with a 3.7 to 6.2 GHz FET low noise IF amplifier and driven by a self contained 23.8 GHz phase locked local oscillator source. The measured level of receiver performance over the 27.3 to 30.0 GHz RF/3.7 to 6.2 GHz IF band includes 5.5 to 6.5 dB (typ) SSB noise figure, 20.5 + or - 1.5 dB conversion gain and +23 dBm minimum third order two tone intermodulation output intercept point.

  17. The 30 GHz communications satellite low noise receiver

    NASA Technical Reports Server (NTRS)

    Steffek, L. J.; Smith, D. W.

    1983-01-01

    A Ka-band low noise front end in proof of concept (POC) model form for ultimate spaceborne communications receiver deployment was developed. The low noise receiver consists of a 27.5 to 30.0 GHz image enhanced mixer integrated with a 3.7 to 6.2 GHz FET low noise IF amplifier and driven by a self contained 23.8 GHz phase locked local oscillator source. The measured level of receiver performance over the 27.3 to 30.0 GHz RF/3.7 to 6.2 GHz IF band includes 5.5 to 6.5 dB (typ) SSB noise figure, 20.5 + or - 1.5 dB conversion gain and +23 dBm minimum third order two tone intermodulation output intercept point.

  18. Low-noise pulse conditioner

    DOEpatents

    Bird, David A.

    1983-01-01

    A low-noise pulse conditioner is provided for driving electronic digital processing circuitry directly from differentially induced input pulses. The circuit uses a unique differential-to-peak detector circuit to generate a dynamic reference signal proportional to the input peak voltage. The input pulses are compared with the reference signal in an input network which operates in full differential mode with only a passive input filter. This reduces the introduction of circuit-induced noise, or jitter, generated in ground referenced input elements normally used in pulse conditioning circuits, especially speed transducer processing circuits.

  19. Low noise lead screw positioner

    NASA Technical Reports Server (NTRS)

    Perkins, Gerald S. (Inventor)

    1986-01-01

    A very precise and low noise lead screw positioner, for positioning a retroreflector in an interferometer is described. A gas source supplies inert pressurized gas, that flows through narrow holes into the clearance space between a nut and the lead screw. The pressurized gas keeps the nut out of contact with the screw. The gas flows axially along the clearance space, into the environment. The small amount of inert gas flowing into the environment minimizes pollution. By allowing such flow into the environment, no seals are required between the end of the nut and the screw.

  20. Low noise charge ramp electrometer

    DOEpatents

    Morgan, John P.; Piper, Thomas C.

    1992-01-01

    An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit.

  1. Low noise charge ramp electrometer

    DOEpatents

    Morgan, J.P.; Piper, T.C.

    1992-10-06

    An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit. 2 figs.

  2. Low-noise pulse conditioner

    DOEpatents

    Bird, D.A.

    1981-06-16

    A low-noise pulse conditioner is provided for driving electronic digital processing circuitry directly from differentially induced input pulses. The circuit uses a unique differential-to-peak detector circuit to generate a dynamic reference signal proportional to the input peak voltage. The input pulses are compared with the reference signal in an input network which operates in full differential mode with only a passive input filter. This reduces the introduction of circuit-induced noise, or jitter, generated in ground referenced input elements normally used in pulse conditioning circuits, especially speed transducer processing circuits. This circuit may be used for conditioning the sensor signal from the Fidler coil in a gas centrifuge for separation of isotopic gaseous mixtures.

  3. Low noise multiwasher superconducting interferometer

    SciTech Connect

    Carelli, P.; Castellano, M.G.; Torrioli, G.; Leoni, R.

    1998-01-01

    The dc-superconducting quantum interference device (SQUID) is a low-noise converter from magnetic flux to voltage which can have, in principle, an energy sensitivity near the quantum limit of {h_bar}/2. A critical parameter for the ideal performance is the device inductance, which must be kept as small as possible. Minimizing the SQUID inductance, however, is a major concern for a practical device; this requirement implies a small SQUID ring and hence magnetic coupling with an external signal is more difficult to achieve. Here we present an original scheme (called multiwasher) to circumvent this problem, and its implementation in an all-refractory thin-film device. Our scheme not only provides good magnetic coupling with a large input coil (0.5 {mu}H) and very low SQUID inductance, but also shielding from outside uniform fields, such as those generated by ambient disturbances. The measured coupled spectral energy sensitivity in the white region at about 1 kHz is 28{h_bar} at 4.2 K and 5.5{h_bar} in a pumped helium bath at 0.9 K. The flux noise spectral density at 0.1 Hz and 0.9 K is {Phi}{sub n}=1{times}10{sup {minus}6}{Phi}{sub 0}/{radical} (Hz) . {copyright} {ital 1998 American Institute of Physics.}

  4. Scalable, Low-Noise Architecture for Integrated Terahertz Imagers

    NASA Astrophysics Data System (ADS)

    Gergelyi, Domonkos; Földesy, Péter; Zarándy, Ákos

    2015-06-01

    We propose a scalable, low-noise imager architecture for terahertz recordings that helps to build large-scale integrated arrays from any field-effect transistor (FET)- or HEMT-based terahertz detector. It enhances the signal-to-noise ratio (SNR) by inherently enabling complex sampling schemes. The distinguishing feature of the architecture is the serially connected detectors with electronically controllable photoresponse. We show that this architecture facilitate room temperature imaging by decreasing the low-noise amplifier (LNA) noise to one-sixteenth of a non-serial sensor while also reducing the number of multiplexed signals in the same proportion. The serially coupled architecture can be combined with the existing read-out circuit organizations to create high-resolution, coarse-grain sensor arrays. Besides, it adds the capability to suppress overall noise with increasing array size. The theoretical considerations are proven on a 4 by 4 detector array manufactured on 180 nm feature sized standard CMOS technology. The detector array is integrated with a low-noise AC-coupled amplifier of 40 dB gain and has a resonant peak at 460 GHz with 200 kV/W overall sensitivity.

  5. The Alternative Low Noise Fan

    NASA Technical Reports Server (NTRS)

    Dittmar, James H.; Elliott, David M.; Jeracki, Robert J.; Moore, Royce D.; Parrott, Tony L.

    2000-01-01

    A 106 bladed fan with a design takeoff tip speed of 1100 ft/sec was hypothesized as reducing perceived noise because of the shift of the blade passing harmonics to frequencies beyond the perceived noise rating range. A 22 in. model of this Alternative Low Noise Fan, ALNF, was tested in the NASA Glenn 9x 15 Wind Tunnel. 'Me fan was tested with a 7 vane long chord stator assembly and a 70 vane conventional stator assembly in both hard and acoustically treated configurations. In addition a partially treated 7 vane configuration was tested wherein the acoustic material between the 7 long chord stators was made inactive. The noise data from the 106 bladed fan with 7 long chord stators in a hard configuration was shown to be around 4 EPNdB quieter than a low tip speed Allison fan at takeoff and around 5 EPNdB quieter at approach. Although the tone noise behaved as hypothesized, the majority of this noise reduction was from reduced broadband noise related to the large number of rotor blades. This 106 bladed ALNF is a research fan designed to push the technology limits and as such is probably not a practical device with present materials technology. However, a low tip speed fan with around 50 blades would be a practical device and calculations indicate that it could be 2 to 3 EPNdB quieter at takeoff and 3 to 4 EPNdB quieter at approach than the Allison fan. 7 vane data compared with 70 vane data indicated that the tone noise was controlled by rotor wake-stator interaction but that the broadband noise is probably controlled by the interaction of the rotor with incoming flows. A possible multiple pure tone noise reduction technique for a fan/acoustic treatment system was identified. The data from the fully treated configuration showed significant noise reductions over a large frequency range thereby providing a real tribute to this bulk absorber treatment design. The tone noise data with the partially treated 7 vane configuration indicated that acoustic material in the

  6. Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

    NASA Technical Reports Server (NTRS)

    Lan, G. L.; Pao, C. K.; Wu, C. S.; Mandolia, G.; Hu, M.; Yuan, S.; Leonard, Regis

    1991-01-01

    Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

  7. High-Performance Solid-State W-Band Power Amplifiers

    NASA Technical Reports Server (NTRS)

    Gaier, Todd; Samoska, Lorene; Wells, Mary; Ferber, Robert; Pearson, John; Campbell, April; Peralta, Alejandro; Swift, Gerald; Yocum, Paul; Chung, Yun

    2003-01-01

    The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.

  8. Note: Broadband low-noise photodetector for Pound-Drever-Hall laser stabilization

    NASA Astrophysics Data System (ADS)

    Potnis, Shreyas; Vutha, Amar C.

    2016-07-01

    The Pound-Drever-Hall laser stabilization technique requires a fast, low-noise photodetector. We present a simple photodetector design that uses a transformer as an intermediary between a photodiode and cascaded low-noise radio-frequency amplifiers. Our implementation using a silicon photodiode yields a detector with 50 MHz bandwidth, gain >105 V/A, and input current noise <4 pA/ √{ Hz } , allowing us to obtain shot-noise-limited performance with low optical power.

  9. High voltage distributed amplifier

    NASA Astrophysics Data System (ADS)

    Willems, D.; Bahl, I.; Wirsing, K.

    1991-12-01

    A high-voltage distributed amplifier implemented in GaAs MMIC technology has demonstrated good circuit performance over at least two octave bandwidth. This technique allows for very broadband amplifier operation with good efficiency in satellite, active-aperture radar, and battery-powered systems. Also, by increasing the number of FETs, the amplifier can be designed to match different voltage rails. The circuit does require a small amount of additional chip size over conventional distributed amplifiers but does not require power dividers or additional matching networks. This circuit configuration should find great use in broadband power amplifier design.

  10. W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

    NASA Astrophysics Data System (ADS)

    Peng, Xu; Xubo, Song; Yuanjie, Lü; Yuangang, Wang; Shaobo, Dun; Jiayun, Yin; Yulong, Fang; Guodong, Gu; Zhihong, Feng; Shujun, Cai

    2015-08-01

    A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. In order to manage coupling effects between all the parts of the W-band MMIC, all matching and bias networks have been first optimized using circuit simulating software and then systematically simulated on 3D full-wave electromagnetic simulator. The fabricated MMIC PA achieves a 257 mW output power at 86.5 GHz in continuous-wave mode, with an associated power added efficiency of 5.4% and an associated power gain of 6.1 dB. The power density is 459 mW/mm. Moreover, the MMIC PA offers over 100 mW in the 83-90 GHz bandwidth. Those performances were measured at drain bias of 12 V. Project supported by the National Natural Science Foundation of China (No. 61306113).

  11. Cryogenetically Cooled Field Effect Transistors for Low-Noise Systems

    NASA Technical Reports Server (NTRS)

    Wollack, Edward J.; Rabin, Douglas M. (Technical Monitor)

    2002-01-01

    Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

  12. Cryogenically Cooled Field Effect Transistors for Low-Noise Systems

    NASA Technical Reports Server (NTRS)

    Wollack, Edward J.

    2002-01-01

    Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

  13. Development of components and subsystems for low noise receivers at micro- and millimeter waves

    NASA Astrophysics Data System (ADS)

    Peltonen, Juhani K.

    1990-09-01

    The development of low noise receivers at micro- and millimeter wave frequencies mainly intended for radio astronomical studies and remote sensing applications are discussed. The work is divided into three parts: design and construction of cryogenic, low noise MESFET (Metal Semiconductor Field Effect Transistor) and HEMT (High Electron Mobility Transistor) amplifiers, studies on semiconductor local oscillators and phase locking of mm wave Gunn oscillators. The basic theory of low noise transistor amplifiers employing scattering and noise parameters of an active device is reviewed. Stability problems of amplifiers and noise measurement techniques especially applicable to cryogenic systems are discussed. Several low noise amplifiers were constructed for the frequency range of 1 to 22 GHz. As an example, a 4 GHz cryogenic MESFET IF amplifier with 20 K noise temperature was developed. A two stage coaxial HEMT amplifier with T(sub A) = 300 K at room temperature was constructed. Various designs of semiconductor local oscillators needed for mm wave receivers are reviewed. Experimental verification of the theoretical model for the waveguide mounting structure of Gunn diodes is given at frequencies of 35 to 53 GHz. Fundamental frequency local oscillators with an output power of approximately 50 mW and mechanical tuning range of 5 to 10 GHz (center frequency of 45 GHz) were constructed. Description of the phase locking scheme (exploiting bias tuning of Gunn oscillators) of the 72 to 115 GHz receiver is given. The additional factors needed in application of the basic phaselock theory to mm wave oscillators are discussed.

  14. An Extremely Wide Bandwidth, Low Noise SIS Heterodyne Receiver Design for Millimeter and Submillimeter Observations

    NASA Technical Reports Server (NTRS)

    Zmuidzinas, J.

    2004-01-01

    Our group has designed a heterodyne submillimeter receiver that offers a very wide IF bandwidth of 12 GHz, while still maintaining a low noise temperature. The 180-300 GHz double-sideband design uses a single SI5 device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz. providing an instantaneous RF bandwidth of 24 GHz (double-sideband). Intensive simulations predict that the junction will achieve a conversion loss better than 1-2 dB and a mixer noise temperature of less than 20 K across the band (twice the quantum limit). The single sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical and environmental observations beyond the capabilities of current instruments. Lab testing of the receiver will begin this summer, and first light on the CSO should be in the Spring of 2003. At the CSO, we plan to use receiver with WASP2, a wideband spectrometer, to search for spectral lines from SCUBA sources. This approach should allow us to rapidly develop a catalog of redshifts for these objects.

  15. Low-noise video amplifiers for imaging CCD's

    NASA Technical Reports Server (NTRS)

    Scinicariello, F.

    1976-01-01

    Various techniques were developed which enable the CCD (charge coupled device) imaging array user to obtain optimum performance from the device. A CCD video channel was described, and detector-preamplifier interface requirements were examined. A noise model for the system was discussed at length and laboratory data presented and compared to predicted results.

  16. Superconducting Quantum Arrays for Wideband Antennas and Low Noise Amplifiers

    NASA Technical Reports Server (NTRS)

    Mukhanov, O.; Prokopemko, G.; Romanofsky, Robert R.

    2014-01-01

    Superconducting Quantum Iinetference Filters (SQIF) consist of a two-dimensional array of niobium Josephson Junctions formed into N loops of incommensurate area. This structure forms a magnetic field (B) to voltage transducer with an impulse like response at B0. In principle, the signal-to-noise ratio scales as the square root of N and the noise can be made arbitrarily small (i.e. The SQIF chips are expected to exhibit quantum limited noise performance). A gain of about 20 dB was recently demonstrated at 10 GHz.

  17. A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

    NASA Technical Reports Server (NTRS)

    Pinsukanjana, Paul R.; Samoska, Lorene A.; Gaier, Todd C.; Smith, R. Peter; Ksendzov, Alexander; Fitzsimmons, Michael J.; Martin, Suzanne C.

    1998-01-01

    We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this

  18. Low-noise pseudomorphic dual-gate cascode HEMT's with extremely high gain

    NASA Astrophysics Data System (ADS)

    Wenger, J.; Narozny, P.; Daembkes, H.; Splettstoesser, J.; Werres, C.

    1992-02-01

    Quarter-micron InGaAs-GaAs dual-gate HEMTs connected as a cascode MMIC in a compact manner have been fabricated and investigated. The devices show a high output impedance and a very low feedback capacitance, resulting in a high-voltage gain factor gm/gd of 125 and a Cgs/Cgd ratio of 45. The current gain cutoff frequency fT is 45 GHz and the maximum stable gain is 23.5 dB at 10 GHz and 19 dB at 20 GHz. The pseudomorphic cascode HEMTs show a low-noise figure of 1.1 dB with an associated gain of 22 dB at 10 GHz, at 18 GHz the minimum noise figure is 1.9 dB with 16-dB gain.

  19. Nonlinearly stacked low noise turbofan stator

    NASA Technical Reports Server (NTRS)

    Schuster, William B. (Inventor); Kontos, Karen B. (Inventor); Weir, Donald S. (Inventor); Nolcheff, Nick A. (Inventor); Gunaraj, John A. (Inventor)

    2009-01-01

    A nonlinearly stacked low noise turbofan stator vane having a characteristic curve that is characterized by a nonlinear sweep and a nonlinear lean is provided. The stator is in an axial fan or compressor turbomachinery stage that is comprised of a collection of vanes whose highly three-dimensional shape is selected to reduce rotor-stator and rotor-strut interaction noise while maintaining the aerodynamic and mechanical performance of the vane. The nonlinearly stacked low noise turbofan stator vane reduces noise associated with the fan stage of turbomachinery to improve environmental compatibility.

  20. Low-Noise Spiral Bevel Gears

    NASA Technical Reports Server (NTRS)

    Lewicki, David G.; Handschuh, Robert F.; Coy, John J.; Henry, Zachary; Thomas, John; Litvin, Faydor L.

    1994-01-01

    Modified spiral bevel gears that generate relatively little noise and vibration designed and fabricated for use in U.S. Army OH-58D helicopter. Noise reduced by 12 to 19 dB. Similar low-noise, low-vibration spiral bevel gears used in other helicopters, with consequent benefits in comfort and health of pilots and passengers, enhancement of pilots' performance and safety through reduction of audible distraction, and reduction in cost and weight of helicopters through reduction in amount of sound-proofing material. Low-noise, low-vibration spiral bevel gears also used in drive axles of cars and trucks for smoother, quieter rides.

  1. MMIC Receiver For Water-Vapor Radiometer

    NASA Technical Reports Server (NTRS)

    Sukamto, Lin M.; Cooley, Thomas W.; Janssen, Michael A.; Parks, Gary S.

    1993-01-01

    MMIC receiver puts out signal, frequency of which proportioned to brightness temperature of sky at input frequency of 31 GHz. Miniaturization enhances thermal stability and stability of calibration of water-vapor radiometer. Potential for mass production at relatively low cost. Facilitating widespread use of MMIC water vapor radiometers in meteorology and aviation, deployed at several global sites to improve capability of general circulation models and at airports to monitor icing conditions by measuring supercooled liquid water in clouds.

  2. Low-noise macroscopic twin beams

    NASA Astrophysics Data System (ADS)

    Iskhakov, Timur Sh.; Usenko, Vladyslav C.; Filip, Radim; Chekhova, Maria V.; Leuchs, Gerd

    2016-04-01

    Applying a multiphoton-subtraction technique to the two-color macroscopic squeezed vacuum state of light generated via high-gain parametric down-conversion we conditionally prepare a different state of light: bright multimode low-noise twin beams. A lower noise in the sum of the photon numbers opens a possibility to encode information into this variable while keeping the nonclassical character of the state. The obtained results demonstrate up to eightfold suppression of noise in each beam while preserving and even moderately improving the nonclassical photon-number correlations between the beams. The prepared low-noise macroscopic state, containing up to 2000 photons per mode, is not among the Gaussian states achievable through nonlinear optical processes. Apart from that, we suggest a method for measuring quantum efficiency, which is based on the Fano factor measurement. The proposed technique substantially improves the usefulness of twin beams for quantum communication and metrology.

  3. A low noise 500 MHz frequency source

    NASA Astrophysics Data System (ADS)

    Vulcan, A.; Bloch, M.; Tanski, W.

    A low-noise signal source providing multiple 500 MHz and 400 MHz outputs is presented whose noise characteristics approach the thermal limit at frequencies spaced greater than 1 MHz from the carrier. The unit uses bulk and surface acoustic wave resonators to insure low phase noise and spurious outputs and is totally redundant for failsafe operation. The packaging concept minimizes subassembly interconnections and provides both physical and electrical independence of two redundant generators; package shielding insures minimum conducted and radiated susceptibility.

  4. An Extremely Wide Bandwidth, Low-Noise SIS Heterodyne Receiver Design for Millimeter and Submillimeter Observations

    NASA Technical Reports Server (NTRS)

    Sumner, Matthew; Blain, Andrew; Harris, Andrew; Hu, Robert; Rice, Frank; LeDuc, H. G.; Weinreb, Sander; Zmuidzinas, Jonas

    2002-01-01

    Millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We present the design for a broadband, sensitive, heterodyne spectrometer under development for the Caltech Submillimeter Observatory (CSO). The 180-300 GHz double-sideband design uses a single SIS device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss should be no more than 1-2 dB with mixer noise temperatures across the band within 10 K of the quantum limit. The single-sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and the first use on the CSO should occur in the spring of 2003.

  5. A Wide-Bandwidth, Low-Noise SIS Receiver Design for Millimeter and Submillimeter Wavelengths

    NASA Technical Reports Server (NTRS)

    Sumner, Matthew; Blain, Andrew; Harris, Andrew; Hu, Robert; LeDuc, Henry G.; Miller, David; Rice, Frank; Weinreb, Sander; Zmuidzinas, Jonas

    2004-01-01

    In principle, millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We are applying modem design tools, such as 3D electromagnetic simulators and Caltech's SuperMix SIS analysis package, to develop a new generation of waveguide SIS mixers with very broad RF and IF bandwidths. Our initial design consists of a double-sideband mixer targeted for the 180- 300 GHz band that uses a single SIS junction excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output band, limited by the MMIC low-noise IF preamplifier, is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss is predicted to be no more than 1-2 dB (single-sideband) with mixer noise temperatures across the band within 10 Kelvin of the quantum limit. The single-sideband receiver noise temperature goal is 70 Kelvin. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and a demonstration on the CSO should occur in the spring of 2003.

  6. The low noise limit in gene expression

    SciTech Connect

    Dar, Roy D.; Weinberger, Leor S.; Cox, Chris D.; Simpson, Michael L.; Razooky, Brandon S.

    2015-10-21

    Protein noise measurements are increasingly used to elucidate biophysical parameters. Unfortunately noise analyses are often at odds with directly measured parameters. Here we show that these inconsistencies arise from two problematic analytical choices: (i) the assumption that protein translation rate is invariant for different proteins of different abundances, which has inadvertently led to (ii) the assumption that a large constitutive extrinsic noise sets the low noise limit in gene expression. While growing evidence suggests that transcriptional bursting may set the low noise limit, variability in translational bursting has been largely ignored. We show that genome-wide systematic variation in translational efficiency can-and in the case of E. coli does-control the low noise limit in gene expression. Therefore constitutive extrinsic noise is small and only plays a role in the absence of a systematic variation in translational efficiency. Lastly, these results show the existence of two distinct expression noise patterns: (1) a global noise floor uniformly imposed on all genes by expression bursting; and (2) high noise distributed to only a select group of genes.

  7. The low noise limit in gene expression

    DOE PAGESBeta

    Dar, Roy D.; Weinberger, Leor S.; Cox, Chris D.; Simpson, Michael L.; Razooky, Brandon S.

    2015-10-21

    Protein noise measurements are increasingly used to elucidate biophysical parameters. Unfortunately noise analyses are often at odds with directly measured parameters. Here we show that these inconsistencies arise from two problematic analytical choices: (i) the assumption that protein translation rate is invariant for different proteins of different abundances, which has inadvertently led to (ii) the assumption that a large constitutive extrinsic noise sets the low noise limit in gene expression. While growing evidence suggests that transcriptional bursting may set the low noise limit, variability in translational bursting has been largely ignored. We show that genome-wide systematic variation in translational efficiencymore » can-and in the case of E. coli does-control the low noise limit in gene expression. Therefore constitutive extrinsic noise is small and only plays a role in the absence of a systematic variation in translational efficiency. Lastly, these results show the existence of two distinct expression noise patterns: (1) a global noise floor uniformly imposed on all genes by expression bursting; and (2) high noise distributed to only a select group of genes.« less

  8. The Low Noise Limit in Gene Expression

    PubMed Central

    Dar, Roy D.; Razooky, Brandon S.; Weinberger, Leor S.; Cox, Chris D.; Simpson, Michael L.

    2015-01-01

    Protein noise measurements are increasingly used to elucidate biophysical parameters. Unfortunately noise analyses are often at odds with directly measured parameters. Here we show that these inconsistencies arise from two problematic analytical choices: (i) the assumption that protein translation rate is invariant for different proteins of different abundances, which has inadvertently led to (ii) the assumption that a large constitutive extrinsic noise sets the low noise limit in gene expression. While growing evidence suggests that transcriptional bursting may set the low noise limit, variability in translational bursting has been largely ignored. We show that genome-wide systematic variation in translational efficiency can–and in the case of E. coli does–control the low noise limit in gene expression. Therefore constitutive extrinsic noise is small and only plays a role in the absence of a systematic variation in translational efficiency. These results show the existence of two distinct expression noise patterns: (1) a global noise floor uniformly imposed on all genes by expression bursting; and (2) high noise distributed to only a select group of genes. PMID:26488303

  9. Ultra-low-noise preamplifier for condenser microphones.

    PubMed

    Starecki, Tomasz

    2010-12-01

    The paper presents the design of a low-noise preamplifier dedicated for condenser measurement microphones used in high sensitivity applications, in which amplifier noise is the main factor limiting sensitivity of the measurements. In measurement microphone preamplifiers, the dominant source of noise at lower frequencies is the bias resistance of the input stage. In the presented solution, resistors were connected to the input stage by means of switches. The switches are opened during measurements, which disconnects the resistors from the input stage and results in noise reduction. Closing the switches allows for fast charging of the microphone capacitance. At low frequencies the noise of the designed preamplifier is a few times lower in comparison to similar, commercially available instruments. PMID:21198039

  10. A battery-based, low-noise voltage source

    NASA Astrophysics Data System (ADS)

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of ±15 and ±5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7×10-7 over 6.5 h and a noise level equal or smaller than 30 nV/√Hz is achieved.

  11. A battery-based, low-noise voltage source.

    PubMed

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of +/-15 and +/-5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7 x 10(-7) over 6.5 h and a noise level equal or smaller than 30 nV/square root(Hz) is achieved. PMID:20590260

  12. Ultra-low-noise preamplifier for condenser microphones

    NASA Astrophysics Data System (ADS)

    Starecki, Tomasz

    2010-12-01

    The paper presents the design of a low-noise preamplifier dedicated for condenser measurement microphones used in high sensitivity applications, in which amplifier noise is the main factor limiting sensitivity of the measurements. In measurement microphone preamplifiers, the dominant source of noise at lower frequencies is the bias resistance of the input stage. In the presented solution, resistors were connected to the input stage by means of switches. The switches are opened during measurements, which disconnects the resistors from the input stage and results in noise reduction. Closing the switches allows for fast charging of the microphone capacitance. At low frequencies the noise of the designed preamplifier is a few times lower in comparison to similar, commercially available instruments.

  13. Note: Broadband low-noise photodetector for Pound-Drever-Hall laser stabilization.

    PubMed

    Potnis, Shreyas; Vutha, Amar C

    2016-07-01

    The Pound-Drever-Hall laser stabilization technique requires a fast, low-noise photodetector. We present a simple photodetector design that uses a transformer as an intermediary between a photodiode and cascaded low-noise radio-frequency amplifiers. Our implementation using a silicon photodiode yields a detector with 50 MHz bandwidth, gain >10(5) V/A, and input current noise <4 pA/Hz, allowing us to obtain shot-noise-limited performance with low optical power. PMID:27475611

  14. W-Band InP Wideband MMIC LNA with 30K Noise Temperature

    NASA Technical Reports Server (NTRS)

    Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

    2000-01-01

    This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

  15. High-Altitude MMIC Sounding Radiometer for the Global Hawk Unmanned Aerial Vehicle

    NASA Technical Reports Server (NTRS)

    Brown, Shannon T.; Lim, Boon H.; Tanner, Alan B.; Tanabe, Jordan M.; Kangaslahti, Pekka P.; Gaier, Todd C.; Soria, Mary M.; Lambrigtsen, Bjorn H.; Denning, Richard F.; Stachnik, Robert A.

    2012-01-01

    Microwave imaging radiometers operating in the 50-183 GHz range for retrieving atmospheric temperature and water vapor profiles from airborne platforms have been limited in the spatial scales of atmospheric structures that are resolved not because of antenna aperture size, but because of high receiver noise masking the small variations that occur on small spatial scales. Atmospheric variability on short spatial and temporal scales (second/ km scale) is completely unresolved by existing microwave profilers. The solution was to integrate JPL-designed, high-frequency, low-noise-amplifier (LNA) technology into the High-Altitude MMIC Sounding Radiometer (HAMSR), which is an airborne microwave sounding radiometer, to lower the system noise by an order of magnitude to enable the instrument to resolve atmospheric variability on small spatial and temporal scales. HAMSR has eight sounding channels near the 60-GHz oxygen line complex, ten channels near the 118.75-GHz oxygen line, and seven channels near the 183.31-GHz water vapor line. The HAMSR receiver system consists of three heterodyne spectrometers covering the three bands. The antenna system consists of two back-to-back reflectors that rotate together at a programmable scan rate via a stepper motor. A single full rotation includes the swath below the aircraft followed by observations of ambient (roughly 0 C in flight) and heated (70 C) blackbody calibration targets located at the top of the rotation. A field-programmable gate array (FPGA) is used to read the digitized radiometer counts and receive the reflector position from the scan motor encoder, which are then sent to a microprocessor and packed into data files. The microprocessor additionally reads telemetry data from 40 onboard housekeeping channels (containing instrument temperatures), and receives packets from an onboard navigation unit, which provides GPS time and position as well as independent attitude information (e.g., heading, roll, pitch, and yaw). The raw

  16. The potential impact of MMICs on future satellite communications

    NASA Technical Reports Server (NTRS)

    Dunn, Vernon E.

    1988-01-01

    This is the Final Report representing the results of a 17-month study on the future trends and requirements of Monolithic Microwave Integrated Circuits (MMIC) for space communication applications. Specifically this report identifies potential space communication applications of MMICs, assesses the impact of MMIC on the classes of systems that were identified, determines the present status and probable 10-year growth in capability of required MMIC and competing technologies, identifies the applications most likely to benefit from further MMIC development and presents recommendations for NASA development activities to address the needs of these applications.

  17. Hybrid matrix amplifier

    DOEpatents

    Martens, J.S.; Hietala, V.M.; Plut, T.A.

    1995-01-03

    The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N[times]M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise. 6 figures.

  18. Hybrid matrix amplifier

    DOEpatents

    Martens, Jon S.; Hietala, Vincent M.; Plut, Thomas A.

    1995-01-01

    The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N.times.M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise.

  19. A LOW NOISE RF SOURCE FOR RHIC.

    SciTech Connect

    HAYES,T.

    2004-07-05

    The Relativistic Heavy Ion Collider (RHIC) requires a low noise rf source to ensure that beam lifetime during a store is not limited by the rf system. The beam is particularly sensitive to noise from power line harmonics. Additionally, the rf source must be flexible enough to handle the frequency jump required for rebucketing (transferring bunches from the acceleration to the storage rf systems). This paper will describe the design of a Direct Digital Synthesizer (DDS) based system that provides both the noise performance and the flexibility required.

  20. Low-noise fan exit guide vanes

    NASA Technical Reports Server (NTRS)

    Jones, Michael G. (Inventor); Parrott, Tony L. (Inventor); Heidelberg, Laurence J. (Inventor); Envia, Edmane (Inventor)

    2008-01-01

    Low-noise fan exit guide vanes are disclosed. According to the present invention a fan exit guide vane has an outer shell substantially shaped as an airfoil and defining an interior cavity. A porous portion of the outer shell allows communication between the fluctuations in the air passing over the guide vane and the interior cavity. At least one acoustically resonant chamber is located within the interior cavity. The resonant chamber is in communication with the porous portion of the outer perimeter. The resonant chamber is configured to reduce the noise generated at a predetermined frequency. In various preferred embodiments, there is a plurality of acoustically resonant chambers located within the interior cavity. The resonant chambers can be separated by one or more partitions within the interior cavity. In these embodiments, the resonant chambers can be configured to reduce the noise generated over a range of predetermined frequencies.

  1. Low noise and conductively cooled microchannel plates

    NASA Technical Reports Server (NTRS)

    Feller, W. B.

    1990-01-01

    Microchannel plate (MCP) dynamic range has recently been enhanced for both very low and very high input flux conditions. Improvements in MCP manufacturing technology reported earlier have led to MCPs with substantially reduced radioisotope levels, giving dramatically lower internal background-counting rates. An update is given on the Galileo low noise MCP. Also, new results in increasing the MCP linear counting range for high input flux densities are presented. By bonding the active face of a very low resistance MCP (less than 1 megaohm) to a substrate providing a conductive path for heat transport, the bias current limit (hence, MCP output count rate limit) can be increased up to two orders of magnitude. Normal pulse-counting MCP operation was observed at bias currents of several mA when a curved-channel MCP (80:1) was bonded to a ceramic multianode substrate; the MCP temperature rise above ambient was less than 40 C.

  2. Low Noise Borehole Triaxial Seismometer Phase II

    SciTech Connect

    Kerr, James D; McClung, David W

    2006-11-06

    This report describes the preliminary design and the effort to date of Phase II of a Low Noise Borehole Triaxial Seismometer for use in networks of seismic stations for monitoring underground nuclear explosions. The design uses the latest technology of broadband seismic instrumentation. Each parameter of the seismometer is defined in terms of the known physical limits of the parameter. These limits are defined by the commercially available components, and the physical size constraints. A theoretical design is proposed, and a preliminary prototype model of the proposed instrument has been built. This prototype used the sensor module of the KS2000. The installation equipment (hole locks, etc.) has been designed and one unit has been installed in a borehole. The final design of the sensors and electronics and leveling mechanism is in process. Noise testing is scheduled for the last quarter of 2006.

  3. Developing Low-Noise GaAs JFETs For Cryogenic Operation

    NASA Technical Reports Server (NTRS)

    Cunningham, Thomas J.

    1995-01-01

    Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.

  4. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  5. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  6. Development of an ultra low noise, miniature signal conditioning device for vestibular evoked response recordings

    PubMed Central

    2014-01-01

    Background Inner ear evoked potentials are small amplitude (<1 μVpk) signals that require a low noise signal acquisition protocol for successful extraction; an existing such technique is Electrocochleography (ECOG). A novel variant of ECOG called Electrovestibulography (EVestG) is currently investigated by our group, which captures vestibular responses to a whole body tilt. The objective is to design and implement a bio-signal amplifier optimized for ECOG and EVestG, which will be superior in noise performance compared to low noise, general purpose devices available commercially. Method A high gain configuration is required (>85 dB) for such small signal recordings; thus, background power line interference (PLI) can have adverse effects. Active electrode shielding and driven-right-leg circuitry optimized for EVestG/ECOG recordings were investigated for PLI suppression. A parallel pre-amplifier design approach was investigated to realize low voltage, and current noise figures for the bio-signal amplifier. Results In comparison to the currently used device, PLI is significantly suppressed by the designed prototype (by >20 dB in specific test scenarios), and the prototype amplifier generated noise was measured to be 4.8 nV/Hz @ 1 kHz (0.45 μVRMS with bandwidth 10 Hz-10 kHz), which is lower than the currently used device generated noise of 7.8 nV/Hz @ 1 kHz (0.76 μVRMS). A low noise (<1 nV/Hz) radio frequency interference filter was realized to minimize noise contribution from the pre-amplifier, while maintaining the required bandwidth in high impedance measurements. Validation of the prototype device was conducted for actual ECOG recordings on humans that showed an increase (p < 0.05) of ~5 dB in Signal-to-Noise ratio (SNR), and for EVestG recordings using a synthetic ear model that showed a ~4% improvement (p < 0.01) over the currently used amplifier. Conclusion This paper presents the design and evaluation of an ultra-low noise and miniaturized bio

  7. A gimbaled low noise momentum wheel

    NASA Technical Reports Server (NTRS)

    Bichler, U.; Eckardt, T.

    1993-01-01

    The bus actuators are the heart and at the same time the Achilles' heel of accurate spacecraft stabilization systems, because both their performance and their perturbations can have a deciding influence on the achievable pointing accuracy of the mission. The main task of the attitude actuators, which are mostly wheels, is the generation of useful torques with sufficiently high bandwidth, resolution and accuracy. This is because the bandwidth of the whole attitude control loop and its disturbance rejection capability is dependent upon these factors. These useful torques shall be provided, without - as far as possible - parasitic noise like unbalance forces and torques and harmonics. This is because such variable frequency perturbations excite structural resonances which in turn disturb the operation of sensors and scientific instruments. High accuracy spacecraft will further require bus actuators for the three linear degrees of freedom (DOF) to damp structural oscillations excited by various sources. These actuators have to cover the dynamic range of these disturbances. Another interesting feature, which is not necessarily related to low noise performance, is a gimballing capability which enables, in a certain angular range, a three axis attitude control with only one wheel. The herein presented Teldix MWX, a five degree of freedom Magnetic Bearing Momentum Wheel, incorporates all the above required features. It is ideally suited to support, as a gyroscopic actuator in the attitude control system, all High Pointing Accuracy and Vibration Sensitive space missions.

  8. Low Noise Exhaust Nozzle Technology Development

    NASA Technical Reports Server (NTRS)

    Majjigi, R. K.; Balan, C.; Mengle, V.; Brausch, J. F.; Shin, H.; Askew, J. W.

    2005-01-01

    NASA and the U.S. aerospace industry have been assessing the economic viability and environmental acceptability of a second-generation supersonic civil transport, or High Speed Civil Transport (HSCT). Development of a propulsion system that satisfies strict airport noise regulations and provides high levels of cruise and transonic performance with adequate takeoff performance, at an acceptable weight, is critical to the success of any HSCT program. The principal objectives were to: 1. Develop a preliminary design of an innovative 2-D exhaust nozzle with the goal of meeting FAR36 Stage III noise levels and providing high levels of cruise performance with a high specific thrust for Mach 2.4 HSCT with a range of 5000 nmi and a payload of 51,900 lbm, 2. Employ advanced acoustic and aerodynamic codes during preliminary design, 3. Develop a comprehensive acoustic and aerodynamic database through scale-model testing of low-noise, high-performance, 2-D nozzle configurations, based on the preliminary design, and 4. Verify acoustic and aerodynamic predictions by means of scale-model testing. The results were: 1. The preliminary design of a 2-D, convergent/divergent suppressor ejector nozzle for a variable-cycle engine powered, Mach 2.4 HSCT was evolved, 2. Noise goals were predicted to be achievable for three takeoff scenarios, and 3. Impact of noise suppression, nozzle aerodynamic performance, and nozzle weight on HSCT takeoff gross weight were assessed.

  9. A gimbaled low noise momentum wheel

    NASA Astrophysics Data System (ADS)

    Bichler, U.; Eckardt, T.

    1993-05-01

    The bus actuators are the heart and at the same time the Achilles' heel of accurate spacecraft stabilization systems, because both their performance and their perturbations can have a deciding influence on the achievable pointing accuracy of the mission. The main task of the attitude actuators, which are mostly wheels, is the generation of useful torques with sufficiently high bandwidth, resolution and accuracy. This is because the bandwidth of the whole attitude control loop and its disturbance rejection capability is dependent upon these factors. These useful torques shall be provided, without - as far as possible - parasitic noise like unbalance forces and torques and harmonics. This is because such variable frequency perturbations excite structural resonances which in turn disturb the operation of sensors and scientific instruments. High accuracy spacecraft will further require bus actuators for the three linear degrees of freedom (DOF) to damp structural oscillations excited by various sources. These actuators have to cover the dynamic range of these disturbances. Another interesting feature, which is not necessarily related to low noise performance, is a gimballing capability which enables, in a certain angular range, a three axis attitude control with only one wheel. The herein presented Teldix MWX, a five degree of freedom Magnetic Bearing Momentum Wheel, incorporates all the above required features. It is ideally suited to support, as a gyroscopic actuator in the attitude control system, all High Pointing Accuracy and Vibration Sensitive space missions.

  10. Forward sweep, low noise rotor blade

    NASA Technical Reports Server (NTRS)

    Brooks, Thomas F. (Inventor)

    1996-01-01

    A forward-swept, low-noise rotor blade includes an inboard section, an aft-swept section and a forward-swept outboard section. The rotor blade reduces the noise of rotorcraft, including both standard helicopters and advanced systems such as tiltrotors. The primary noise reduction feature is the forward sweep of the planform over a large portion of the outer blade radius. The rotor blade also includes an aft-swept section. The purpose of the aft-swept region is to provide a partial balance to pitching moments produced by the outboard forward-swept portion of the blade. The rotor blade has a constant chord width; or has a chord width which decreases linearly along the entire blade span; or combines constant and decreasing chord widths, wherein the blade is of constant chord width from the blade root to a certain location on the rotor blade, then decreases linearly to the blade tip thereafter. The noise source showing maximum noise reduction is blade-vortex interaction (BVI) noise. Also reduced are thickness, noise, high speed impulsive noise, cabin vibration and loading noise.

  11. A low-noise beta-radiometer

    SciTech Connect

    Antonenko, G.I.; Savina, V.I.

    1995-12-01

    The two-channel detector for a low-noise (down to 0.06 sec{sup -1}) beta-radiometer for measuring the mass concentration of {sup 90}Sr in the environment after the chemical extraction of strontium by the oxalate-nitrate method was certified at the D.I. Mendeleev Institute of Metrology (certificate No. 137/93). A detector unit using two end-window self-quenching counters with thin input windows (8 {mu}m thick and 60 mm in diameter) operating as a Geiger-Mueller counter and filled with a mixture of 90% helium (atomic gas) and 10% ethanol (organic molecules) can measure the beta-activity of two substrates concurrently. It is often used to detect the beta-radiation of {sup 90}Sr. This isotope produces particles with energies ranging from 180 to 1000 keV, and the detection efficiency is 50% at a level of 0.1 Bq after measuring for 20 min with an uncertainty of 25%.

  12. A Low-Noise, Wideband Preamplifier for a Fourier-Transform Ion Cyclotron Resonance Mass Spectrometer

    PubMed Central

    Mathur, Raman; Knepper, Ronald W.; O'Connor, Peter B.

    2009-01-01

    FTMS performance parameters such as limits of detection, dynamic range, sensitivity, and even mass accuracy and resolution can be greatly improved by enhancing its detection circuit. An extended investigation of significant design considerations for optimal signal-to-noise ratio in an FTMS detection circuit are presented. A low noise amplifier for an FTMS is developed based on the discussed design rules. The amplifier has a gain of ≈ 3500 and a bandwidth of 10 kHz - 1 MHz corresponding to m/z range of 100 Da to 10 kDa (at 7 Tesla). The performance of the amplifier was tested on a MALDI-FTMS, and has demonstrated a 25-fold reduction in noise in a mass spectrum of C60 compared to that of a commercial amplifier. PMID:18029195

  13. Ultra-Low Noise HEMT Device Models: Application of On-Wafer Cryogenic Noise Analysis and Improved Parameter Extraction Techniques

    NASA Technical Reports Server (NTRS)

    Bautista, J. J.; Hamai, M.; Nishimoto, M.; Laskar, J.; Szydlik, P.; Lai, R.

    1995-01-01

    Significant advances in the development of HEMT technology have resulted in high performance cryogenic low noise amplifiers whose noise temperatures are within an order of magnitude of the quantum noise limit. Key to the identification of optimum HEMT structures at cryogenic temperatures is the development of on-wafer noise and device parameter extraction techniques. Techniques and results are described.

  14. Power-Amplifier Module for 145 to 165 GHz

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Peralta, Alejandro

    2007-01-01

    A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.

  15. MMIC Amplifiers and Wafer Probes for 350 to 500 GHz

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene A.; Fung, King Man; Andrews, Michael; Campbell, Richard; Ferreira, Linda; Lai, Richard

    2010-01-01

    A wireless avionics interface exploits the constrained nature of data networks in flight systems to use a lightweight routing method. This simplified routing means that a processor is not required, and the logic can be implemented as an intellectual property (IP) core in a field-programmable gate array (FPGA). The FPGA can be shared with the flight subsystem application. In addition, the router is aware of redundant subsystems, and can be configured to provide hot standby support as part of the interface. This simplifies implementation of flight applications requiring hot stand - by support. When a valid inbound packet is received from the network, the destination node address is inspected to determine whether the packet is to be processed by this node. Each node has routing tables for the next neighbor node to guide the packet to the destination node. If it is to be processed, the final packet destination is inspected to determine whether the packet is to be forwarded to another node, or routed locally. If the packet is local, it is sent to an Applications Data Interface (ADI), which is attached to a local flight application. Under this scheme, an interface can support many applications in a subsystem supporting a high level of subsystem integration. If the packet is to be forwarded to another node, it is sent to the outbound packet router. The outbound packet router receives packets from an ADI or a packet to be forwarded. It then uses a lookup table to determine the next destination for the packet. Upon detecting a remote subsystem failure, the routing table can be updated to autonomously bypass the failed subsystem.

  16. 338-GHz Semiconductor Amplifier Module

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Fung, King Man; Rasisic, Vesna; Deal, William; Leong, Kevin; Mei, Xiao Bing; Yoshida, Wayne; Liu, Po-Hsin; Uyeda, Jansen; Lai, Richard

    2010-01-01

    Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers.

  17. Low Noise Research Fan Stage Design

    NASA Technical Reports Server (NTRS)

    Hobbs, David E.; Neubert, Robert J.; Malmborg, Eric W.; Philbrick, Daniel H.; Spear, David A.

    1995-01-01

    This report describes the design of a Low Noise ADP Research Fan stage. The fan is a variable pitch design which is designed at the cruise pitch condition. Relative to the cruise setting, the blade is closed at takeoff and opened for reverse thrust operation. The fan stage is a split flow design with fan exit guide vanes and core stators. This fan stage design was combined with a nacelle and engine core duct to form a powered fan/nacelle, subscale model. This model is intended for use in aerodynamic performance, acoustic and structural testing in a wind tunnel. The model has a 22-inch outer fan diameter and a hub-to-top ratio of 0.426 which permits the use of existing NASA fan and cowl force balance designs and rig drive system. The design parameters were selected to permit valid acoustic and aerodynamic comparisons with the PW 17-inch rig previously tested under NASA contract. The fan stage design is described in detail. The results of the design axisymmetric analysis at aerodynamic design condition are included. The structural analysis of the fan rotor and attachment is described including the material selections and stress analysis. The blade and attachment are predicted to have adequate low cycle fatigue life, and an acceptable operating range without resonant stress or flutter. The stage was acoustically designed with airfoil counts in the fan exit guide vane and core stator to minimize noise. A fan-FEGV tone analysis developed separately under NASA contract was used to determine these airfoil counts. The fan stage design was matched to a nacelle design to form a fan/nacelle model for wind tunnel testing. The nacelle design was developed under a separate NASA contract. The nacelle was designed with an axisymmetric inlet, cowl and nozzle for convenience in testing and fabrication. Aerodynamic analysis of the nacelle confirmed the required performance at various aircraft operating conditions.

  18. Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate

    NASA Technical Reports Server (NTRS)

    Deal, W. R.; Din, S.; Padilla, J.; Radisic, V.; Mei, G.; Yoshida, W.; Liu, P. S.; Uyeda, J.; Barsky, M.; Gaier, T.; Fung, A.; Samoska, Lorene A.; Lai, R.

    2006-01-01

    In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.

  19. A 65-nm low-noise low-cost ΣΔ modulator for audio applications

    NASA Astrophysics Data System (ADS)

    Guo, Liang; Lu, Liao; Hao, Luo; Xiaopeng, Liu; Xiaoxia, Han; Yan, Han

    2012-02-01

    This paper introduces a low-noise low-cost ΣΔ modulator for digital audio analog-to-digital conversion. By adopting a low-noise large-output swing operation amplifier, not only is the flicker noise greatly inhibited, but also the power consumption is reduced. Also the area cost is relatively small. The modulator was implemented in a SMIC standard 65-nm CMOS process. Measurement results show it can achieve 96 dB peak signal-to-noise plus distortion ratio (SNDR) and 105 dB dynamic range (DR) over the 22.05-kHz audio band and occupies 0.16 mm2. The power consumption of the proposed modulator is 4.9 mW from a 2.5 V power supply, which is suitable for high-performance, low-cost audio codec applications.

  20. Ka-band MMIC arrays for ACTS Aero Terminal Experiment

    NASA Technical Reports Server (NTRS)

    Raquet, C.; Zakrajsek, R.; Lee, R.; Turtle, J.

    1992-01-01

    An antenna system consisting of three experimental Ka-band active arrays using GaAs MMIC devices at each radiating element for electronic beam steering and distributed power amplification is presented. The MMIC arrays are to be demonstrated in the ACTS Aeronautical Terminal Experiment, planned for early 1994. The experiment is outlined, with emphasis on a description of the antenna system. Attention is given to the way in which proof-of-concept MMIC arrays featuring three different state-of-the-art approaches to Ka-band MMIC insertion are being incorporated into an experimental aircraft terminal for the demonstration of an aircraft-to-satellite link, providing a basis for follow-on MMIC array development.

  1. Low-noise hybrid superconductor/semiconductor 7.4 GHz receiver downconverter for NASA space applications

    SciTech Connect

    Javadi, H.H.S.; Barner, J.B.; Bautista, J.J.

    1994-12-31

    A low-noise microwave receiver downconverter utilizing thin-film high-critical-temperature superconducting (HTS) passive circuitry and semiconductor active devices has been developed for use in space. It consists of an HTS preselect filter, a cryogenic low-noise amplifier, a cryogenic mixer, and a cryogenic oscillator with an HTS resonator. The downconverter converts a 200 MHz wide band centered around 7.35 GHz to a band centered around 1.0 GHz. When cooled to 77 K, the downconverter plus cables inside a cryogenic refrigerator produced a noise temperature measured at the refrigerator port of approximately 50 K with conversion gain of 18 dB.

  2. InP MMIC Chip Set for Power Sources Covering 80-170 GHz

    NASA Technical Reports Server (NTRS)

    Ngo, Catherine

    2001-01-01

    We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

  3. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    NASA Technical Reports Server (NTRS)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  4. Compact low-noise preamplifier for noise spectroscopy with biased photodiodes in cargo inspection systems

    NASA Astrophysics Data System (ADS)

    Benetti, Bob; Langeveld, Willem G. J.

    2013-09-01

    Noise Spectroscopy, a.k.a. Z-determination by Statistical Count-rate ANalysis (Z-SCAN), is a statistical technique to determine a quantity called the "noise figure" from digitized waveforms of pulses of transmitted x-rays in cargo inspection systems. Depending only on quantities related to the x-ray energies, it measures a characteristic of the transmitted x-ray spectrum, which depends on the atomic number, Z, of the material penetrated. The noise figure can thus be used for material separation. In an 80-detector prototype, scintillators are used with large-area photodiodes biased at 80V and digitized using 50-MSPS 12-bit ADC boards. We present an ultra-compact low-noise preamplifier design, with one high-gain and one low-gain channel per detector for improved dynamic range. To achieve adequate detection sensitivity and spatial resolution each dual-gain preamplifier channel must fit within a 12.7 mm wide circuit board footprint and maintain adequate noise immunity to conducted and radiated interference from adjacent channels. The novel design included iterative SPICE analysis of transient response, dynamic range, frequency response, and noise analysis to optimize the selection and configuration of amplifiers and filter response. We discuss low-noise active and passive components and low-noise techniques for circuit board layout that are essential to achieving the design goals, and how the completed circuit board performed in comparison to the predicted responses.

  5. Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene A.; Bryerton, Eric; Pukala, David; Peralta, Alejandro; Hu, Ming; Schmitz, Adele

    2005-01-01

    This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

  6. MMIC Phased Array Demonstrations with ACTS

    NASA Technical Reports Server (NTRS)

    Raquet, Charles A. (Compiler); Martzaklis, Konstantinos (Compiler); Zakrajsek, Robert J. (Compiler); Andro, Monty (Compiler); Turtle, John P.

    1996-01-01

    Over a one year period from May 1994 to May 1995, a number of demonstrations were conducted by the NASA Lewis Research Center (LeRC) in which voice, data, and/or video links were established via NASA's advanced communications technology satellite (ACTS) between the ACTS link evaluation terminal (LET) in Cleveland, OH, and aeronautical and mobile or fixed Earth terminals having monolithic microwave integrated circuit (MMIC) phased array antenna systems. This paper describes four of these. In one, a duplex voice link between an aeronautical terminal on the LeRC Learjet and the ACTS was achieved. Two others demonstrated duplex voice (and in one case video as well) links between the ACTS and an Army vehicle. The fourth demonstrated a high data rate downlink from ACTS to a fixed terminal. Array antenna systems used in these demonstrations were developed by LeRC and featured LeRC and Air Force experimental arrays using gallium arsenide MMIC devices at each radiating element for electronic beam steering and distributed power amplification. The single 30 GHz transmit array was developed by NASA/LeRC and Texas Instruments. The three 20 GHz receive arrays were developed in a cooperative effort with the Air Force Rome Laboratory, taking advantage of existing Air Force array development contracts with Boeing and Lockheed Martin. The paper describes the four proof-of-concept arrays and the array control system. The system configured for each of the demonstrations is described, and results are discussed.

  7. Ka-band MMIC microstrip array for high rate communications

    NASA Technical Reports Server (NTRS)

    Lee, R. Q.; Raquet, C. A.; Tolleson, J. B.; Sanzgiri, S. M.

    1991-01-01

    In a recent technology assessment of alternative communication systems for the space exploration initiative (SEI), Ka-band (18 to 40 GHz) communication technology was identified to meet the mission requirements of telecommunication, navigation, and information management. Compared to the lower frequency bands, Ka-band antennas offer higher gain and broader bandwidths; thus, they are more suitable for high data rate communications. Over the years, NASA has played an important role in monolithic microwave integrated circuit (MMIC) phased array technology development, and currently, has an ongoing contract with Texas Instrument (TI) to develop a modular Ka-band MMIC microstrip subarray (NAS3-25718). The TI contract emphasizes MMIC integration technology development and stipulates using existing MMIC devices to minimize the array development cost. The objective of this paper is to present array component technologies and integration techniques used to construct the subarray modules.

  8. Very Low Noise Multiplexing with SQUIDs and SiGe Heterojunction Bipolar Transistors for Readout of Large Superconducting Bolometer Arrays

    NASA Astrophysics Data System (ADS)

    Voisin, F.; Bréelle, E.; Piat, M.; Prêle, D.; Klisnick, G.; Sou, G.; Redon, M.

    2008-05-01

    This paper presents an ultra low noise instrumentation based on a standard BiCMOS SiGe 0.35 μm ASIC operating at cryogenic temperatures. The main functions of the electronic circuit are the readout and the multiplexing of SQUIDs/TES. We report the cryogenic operation of the ASIC dedicated to the readout of a 2×4 pixel demonstrator array. We particularly emphasize on the development and the test phases of an ultra low noise ( 0.2 nV/sqrt{Hz} ) cryogenic amplifier designed with two multiplexed inputs. The cryogenic SiGe amplifier coupled to a SQUID in a FLL operating at 4.2 K is also presented.

  9. Very-low-noise multiplexing with SQUIDs and SiGe HBTs for readout of large superconducting bolometer arrays

    NASA Astrophysics Data System (ADS)

    Prêle, D.; Klisnick, G.; Sou, G.; Redon, M.; Bréelle, E.; Voisin, F.; Piat, M.

    2007-08-01

    We present an ultra-low-noise instrumentation based on a standard BiCMOS SiGe 0.35 μm ASIC operating at cryogenic temperatures. The main functions of the electronic circuit are the readout and the multiplexing of SQUIDs/TES arrays. We report the cryogenic operation of the ASIC dedicated to the readout of a 2×4 pixel demonstrator array. We particularly emphasise on the development, and the test phases of an ultra-low-noise (0.2 nV/√Hz) cryogenic amplifier designed with two multiplexed input. The cryogenic SiGe amplifier coupled to a SQUID in a FLL operating at 4.2 K is also presented.

  10. Low-noise preamplifier based on PMT and its signal processing

    NASA Astrophysics Data System (ADS)

    Ye, Li-hua; Wang, Hai-yang; Wang, Wen-xuan; Cui, Yi-ping; Hang, Jian-jun; Sha, Tao

    2013-09-01

    Through the establishment of the noise model for photomultiplier, estimate the signal-to-noise ratio of the photomultiplier tube, using the principle of photoelectric detection technology, combined with the needs of practical applications; select the appropriate photoelectric multiplier tube, from the two aspects of the dynamic design and static design to ensure the correct output signal of the photomultiplier tube. The low noise preamplifier will amplify the output signal of photomultiplier tube without noise as soon as possible. This article describes the design principles of the photomultiplier tube selection and application. From the op-amp selection, multistage amplifier circuit design, circuit noise estimation, PCB board layout line and shielding, proposed a practical circuit design of 10MHz band width; and matters needing attention and its signal processing method. The simulation results show that the signal amplifying circuit designed, this circuit design can be very well amplifying and processing the output signal of the photomultiplier tube. To verify the theory of articles derived from circuit simulation to the actual test. Simulation results show that the signal amplifying circuit design, this form of circuit design can be very good enlarged and processing the output signal of the photomultiplier tube. From the actual test, the test results show that the accuracy and practicality of the simulation results.