Low-Noise Band-Pass Amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1982-01-01

Circuit uses standard components to overcome common limitation of JFET amplifiers. Low-noise band-pass amplifier employs JFET and operational amplifier. High gain and band-pass characteristics are achieved with suitable choice of resistances and capacitances. Circuit should find use as low-noise amplifier, for example as first stage instrumentation systems.

Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

2009-01-01

Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

MMIC HEMT Power Amplifier for 140 to 170 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Radisic, Vesna; Ngo, Catherine; Janke, Paul; Hu, Ming; Micovic, Miro

2003-01-01

A three-stage monolithic microwave integrated circuit (MMIC) power amplifier that features high-electron-mobility transistors (HEMTs) as gain elements is reviewed. This amplifier is designed to operate in the frequency range of 140 to 170 GHz, which contains spectral lines of several atmospheric molecular species plus subharmonics of other such spectral lines. Hence, this amplifier could serve as a prototype of amplifiers to be incorporated into heterodyne radiometers used in atmospheric science. The original intended purpose served by this amplifier is to boost the signal generated by a previously developed 164-GHz MMIC HEMT doubler and drive a 164-to-328-GHz doubler to provide a few milliwatts of power at 328 GHz.

MMIC DHBT Common-Base Amplifier for 172 GHz

NASA Technical Reports Server (NTRS)

Paidi, Vamsi; Griffith, Zack; Wei, Yun; Dahlstrom, Mttias; Urteaga, Miguel; Rodwell, Mark; Samoska, Lorene; Fung, King Man; Schlecht, Erich

2006-01-01

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this

Low noise InP-based MMIC receivers for W-band

NASA Technical Reports Server (NTRS)

Leonard, Regis F.

1991-01-01

A program to develop a monolithic W-band low noise amplifier (a critical element in any W-band communications, sensors, or radar application) is described. Goals of the program include a completely monolithic low noise amplifier, less than a 3.5 dB noise figure, and a monolithic mixer suitable for integration with the LNA.

Silicon Germanium Cryogenic Low Noise Amplifiers

NASA Astrophysics Data System (ADS)

Bardin, J. C.; Montazeri, S.; Chang, Su-Wei

2017-05-01

Silicon germanium heterojunction bipolar transistors have emerged in the last decade as an excellent option for use in cryogenic low noise amplifiers. This paper begins with a review of the critical developments that have led to today’s cryogenic low noise amplifiers. Next, recent work focused on minimizing the power consumption of SiGe cryogenic amplifiers is presented. Finally, open issues related to the cryogenic noise properties of SiGe HBTs are discussed.

Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions

NASA Technical Reports Server (NTRS)

Padmanabhan, Sharmila; Fung, King Man; Kangaslahti, Pekka P.; Peralta, Alejandro; Soria, Mary M.; Pukala, David M.; Sin, Seth; Samoska, Lorene A.; Sarkozy, Stephen; Lai, Richard

2012-01-01

Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to

Beyond G-band : a 235 GHz InP MMIC amplifier

NASA Technical Reports Server (NTRS)

Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

2005-01-01

We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

Ka-band MMIC subarray technology program (Ka-Mist)

NASA Technical Reports Server (NTRS)

Pottenger, Warren

1995-01-01

The broad objective of this program was to demonstrate a proof of concept insertion of Monolithic Microwave Integrated Circuit (MMIC) device technology into an innovative (tile architecture) active phased array antenna application supporting advanced EHF communication systems. Ka-band MMIC arrays have long been considered as having high potential for increasing the capability of space, aircraft, and land mobile communication systems in terms of scan performance, data rate, link margin, and flexibility while offering a significant reduction in size, weight, and power consumption. Insertion of MMIC technology into antenna systems, particularly at millimeter wave frequencies using low power and low noise amplifiers in close proximity to the radiating elements, offers a significant improvement in the array transmit efficiency, receive system noise figure, and overall array reliability. Application of active array technology also leads to the use of advanced beamforming techniques that can improve beam agility, diversity, and adaptivity to complex signal environments.

Matched wideband low-noise amplifiers for radio astronomy.

PubMed

Weinreb, S; Bardin, J; Mani, H; Jones, G

2009-04-01

Two packaged low noise amplifiers for the 0.3-4 GHz frequency range are described. The amplifiers can be operated at temperatures of 300-4 K and achieve noise temperatures in the 5 K range (<0.1 dB noise figure) at 15 K physical temperature. One amplifier utilizes commercially available, plastic-packaged SiGe transistors for first and second stages; the second amplifier is identical except it utilizes an experimental chip transistor as the first stage. Both amplifiers use resistive feedback to provide input reflection coefficient S11<-10 dB over a decade bandwidth with gain over 30 dB. The amplifiers can be used as rf amplifiers in very low noise radio astronomy systems or as i.f. amplifiers following superconducting mixers operating in the millimeter and submillimeter frequency range.

Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

DTIC Science & Technology

2017-03-01

Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265 Abstract: We report on a multi-octave (100 MHz ‒ 8 GHz), linear nonuniform distributed...amplifier (NDPA) in a MMIC architecture using scaled 120-nm short-gate- length GaN HEMTs. The linear NDPAs were built with six sections in a nonuniform ...MHz ‒ 8 GHz) GaN MMIC nonuniform distributed amplifier (NDPA) with built-in linearization and a gm3 cancellation method in class A and class C

Influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlidis, D.; Cazaux, J.L.; Graffeuil, J.

1988-04-01

The RF small-signal performance of GaAs MESFET's and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, and recess depth influence are theoretically analyzed with the help of a specially developed device simulator. The performance of MMIC amplifiers processed with various energies, doses, recess depths, and bias conditions is discussed and compared to experimental characteristics. Some criteria are finally proposed for the choice of implantation conditions and process in order to optimize the characteristics of ion-implanted FET's and to realize process-tolerant MMIC amplifiers.

Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers (Part 2)

DTIC Science & Technology

2013-07-01

2 Figure 2. A 2-GHz load-pull simulation of output power (Pcomp-6 x 65 µm PHEMT). ..............2 Figure 3. A 2-GHz load-pull simulation of PAE (6...5. MMIC 1–5 GHz output power and PAE performance simulation (1, 2, 3, and 4 GHz...load-pull simulation of PAE (6 x 50 µm PHEMT). .......................................7 Figure 9. MMIC 10–19 GHz broadband power amplifier linear

Cryogenic ultra-low-noise SiGe transistor amplifier.

PubMed

Ivanov, B I; Trgala, M; Grajcar, M; Il'ichev, E; Meyer, H-G

2011-10-01

An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.

Multiple Differential-Amplifier MMICs Embedded in Waveguides

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Schlecht, Erich

2010-01-01

Compact amplifier assemblies of a type now being developed for operation at frequencies of hundreds of gigahertz comprise multiple amplifier units in parallel arrangements to increase power and/or cascade arrangements to increase gains. Each amplifier unit is a monolithic microwave integrated circuit (MMIC) implementation of a pair of amplifiers in differential (in contradistinction to single-ended) configuration. Heretofore, in cascading amplifiers to increase gain, it has been common practice to interconnect the amplifiers by use of wires and/or thin films on substrates. This practice has not yielded satisfactory results at frequencies greater than 200 Hz, in each case, for either or both of two reasons: Wire bonds introduce large discontinuities. Because the interconnections are typically tens of wavelengths long, any impedance mismatches give rise to ripples in the gain-vs.-frequency response, which degrade the performance of the cascade.

Ku band low noise parametric amplifier

NASA Technical Reports Server (NTRS)

1976-01-01

A low noise, K sub u-band, parametric amplifier (paramp) was developed. The unit is a spacecraft-qualifiable, prototype, parametric amplifier for eventual application in the shuttle orbiter. The amplifier was required to have a noise temperature of less than 150 K. A noise temperature of less than 120 K at a gain level of 17 db was achieved. A 3-db bandwidth in excess of 350 MHz was attained, while deviation from phase linearity of about + or - 1 degree over 50 MHz was achieved. The paramp operates within specification over an ambient temperature range of -5 C to +50 C. The performance requirements and the operation of the K sub u-band parametric amplifier system are described. The final test results are also given.

Coplanar monolithic integrated circuits for low-noise communication and radar systems

NASA Astrophysics Data System (ADS)

Bessemoulin, Alexandre; Verweyen, Ludger; Marsetz, Waldemar; Massler, Hermann; Neumann, Markus; Hulsmann, Axel; Schlechtweg, Michael

1999-12-01

This paper presents coplanar millimeter-wave monolithic integrated circuits with high performance and small size for use in low noise communication and radar system applications. Technology and modeling issues with respect to active and passive elements are discussed first. In a second step, the potential of coplanar waveguides to realize compact ICs is illustrated through various design examples, such as low noise amplifiers, mixers and power amplifiers. The performance of multifunctional ICs is also presented by comparing simulated and measured results for a complete 77 GHz Transceive MMIC.

Advances in MMIC technology for communications satellites

NASA Technical Reports Server (NTRS)

Leonard, Regis F.

1992-01-01

This paper discusses NASA Lewis Research Center's program for development of monolithic microwave integrated circuits (MMIC) for application in space communications. Emphasis will be on the improved performance in power amplifiers and low noise receivers which has been made possible by the development of new semiconductor materials and devices. Possible applications of high temperature superconductivity for space communications will also be presented.

Compact, Single-Stage MMIC InP HEMT Amplifier

NASA Technical Reports Server (NTRS)

Pukala, David; Samoska, Lorene; Fung, King Man; Gaier, Todd; Deal, W. R.; Mei, Gerry; Radisic, Vesna; Lai, Richard

2008-01-01

A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.

External Peltier Cooler For Low-Noise Amplifier

NASA Technical Reports Server (NTRS)

Soper, Terry A.

1990-01-01

Inexpensive Peltier-effect cooling module made of few commercially available parts used to reduce thermal noise in microwave amplifier. Retrofitted to almost any microwave low-noise amplifier or receiver preamplifier used in communication, telemetry, or radar. Includes copper or aluminum cold plate held tightly against unit to be cooled by strap-type worm-gear clamps.

Amplifier arrays for CMB polarization

NASA Technical Reports Server (NTRS)

Gaier, Todd; Lawrence, Charles R.; Seiffert, Michael D.; Wells, Mary M.; Kangaslahti, Pekka; Dawson, Douglas

2003-01-01

Cryogenic low noise amplifier technology has been successfully used in the study of the cosmic microwave background (CMB). MMIC (Monolithic Millimeter wave Integrated Circuit) technology makes the mass production of coherent detection receivers feasible.

MMIC Amplifier Produces Gain of 10 dB at 235 GHz

NASA Technical Reports Server (NTRS)

Dawson, Douglas; Fung, King Man; Lee, Karen; Samoska, Lorene; Wells, Mary; Gaier, Todd; Kangaslahti, Pekka; Grundbacher, Ronald; Lai, Richard; Raja, Rohit;

Cryogenic 160-GHz MMIC Heterodyne Receiver Module

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Soria, Mary M.; Owen, Heather R.; Dawson, Douglas E.; Kangaslahti, Pekka P.; Gaier, Todd C.; Voll, Patricia; Lau, Judy; Sieth, Matt; Church, Sarah

2011-01-01

A cryogenic 160-GHz MMIC heterodyne receiver module has demonstrated a system noise temperature of 100 K or less at 166 GHz. This module builds upon work previously described in Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation (NPO-47664), NASA Tech Briefs, Vol. 35, No. 8 (August 2011), p. 27. In the original module, the local oscillator signal was saturating the MMIC low-noise amplifiers (LNAs) with power. In order to suppress the local oscillator signal from reaching the MMIC LNAs, the W-band (75 110 GHz) signal had to be filtered out before reaching 140 170 GHz. A bandpass filter was developed to cover 120 170 GHz, using microstrip parallel-coupled lines to achieve the desired filter bandwidth, and ensure that the unwanted W-band local oscillator signal would be sufficiently suppressed. With the new bandpass filter, the entire receiver can work over the 140 180-GHz band, with a minimum system noise temperature of 460 K at 166 GHz. The module was tested cryogenically at 20 K ambient temperature, and it was found that the receiver had a noise temperature of 100 K over an 8-GHz bandwidth. The receiver module now includes a microstrip bandpass filter, which was designed to have a 3-dB bandwidth of approximately 120-170 GHz. The filter was fabricated on a 3-mil-thick alumina substrate. The filter design was based on a W-band filter design made at JPL and used in the QUIET (Q/U Imaging ExperimenT) radiometer modules. The W-band filter was scaled for a new center frequency of 150 GHz, and the microstrip segments were changed accordingly. Also, to decrease the bandwidth of the resulting scaled design, the center gaps between the microstrip lines were increased (by four micrometers in length) compared to the gaps near the edges. The use of the 150-GHz bandpass filter has enabled the receiver module to function well at room temperature. The system noise temperature was measured to be less than 600 K (at room temperature) from 154 to 168 GHz

Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Derewonko, H.; Bosella, A.; Pataut, G.

1996-06-01

An evaluation program of Thomson CSF-TCS GaAs low noise and power MMIC technologies to 1 MeV equivalent neutron fluence levels, up to 1 {times} 10{sup 15} n/cm{sup 2}, ionizing 1.17--1.33 MeV CO{sup 60} dose levels in excess of 200 Mrad(GaAs) and dose rate levels reaching 1.89 {times} 10{sup 11} rad(GaAs)/s is presented in terms of proper components and parameter choices, DC/RF electrical measurements and test methods under irradiation. Experimental results are explained together with drift analyses of electrical parameters that have determined threshold limits of component degradations. Modelling the effects of radiation on GaAs components relies on degradation analysis ofmore » active layer which appears to be the most sensitive factor. MMICs degradation under neutron fluence was simulated from irradiated FET data. Finally, based on sensitivity of technological parameters, rad-hard design including material, technology and MMIC design enhancement is discussed.« less

Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Chevalier, Christine T.; Wintucky, Edwin G.; Freeman, Jon C.

2010-01-01

The design, simulation, and characterization of a novel Ka-band (32.05 0.25 GHz) rectangular waveguide two-way branch-line hybrid unequal power combiner (with port impedances matched to that of a standard WR-28 waveguide) has been created to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The measured combining efficiency is 92.9 percent at the center frequency of 32.05 GHz. This circuit is efficacious in combining the unequal output power from two Ka-band GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with high efficiency. The component parts include the branch-line hybrid-based power combiner and the MMIC-based PAs. A two-way branch-line hybrid is a four-port device with all ports matched; power entering port 1 is divided in phase, and into the ratio 2:1 between ports 3 and 4. No power is coupled to port 2. MMICs are a type of integrated circuit fabricated on GaAs that operates at microwave frequencies, and performs the function of signal amplification. The power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA's deep space frequency band. The power combiner would have an output return loss better than 20 dB. Isolation between the output port and the isolated port is greater than 25 dB. Isolation between the two input ports is greater than 25 dB. The combining efficiency would be greater than 90 percent when the ratio of the two input power levels is two. The power combiner is machined from aluminum with E-plane split-block arrangement, and has excellent reliability. The flexibility of this design allows the combiner to be customized for combining the power from MMIC PAs with an arbitrary power output ratio. In addition, it allows combining a low-power GaAs MMIC with a high-power GaN MMIC. The arbitrary

Study of complete interconnect reliability for a GaAs MMIC power amplifier

NASA Astrophysics Data System (ADS)

Lin, Qian; Wu, Haifeng; Chen, Shan-ji; Jia, Guoqing; Jiang, Wei; Chen, Chao

2018-05-01

By combining the finite element analysis (FEA) and artificial neural network (ANN) technique, the complete prediction of interconnect reliability for a monolithic microwave integrated circuit (MMIC) power amplifier (PA) at the both of direct current (DC) and alternating current (AC) operation conditions is achieved effectively in this article. As a example, a MMIC PA is modelled to study the electromigration failure of interconnect. This is the first time to study the interconnect reliability for an MMIC PA at the conditions of DC and AC operation simultaneously. By training the data from FEA, a high accuracy ANN model for PA reliability is constructed. Then, basing on the reliability database which is obtained from the ANN model, it can give important guidance for improving the reliability design for IC.

A low-noise current-sensitive amplifier-discriminator system for beta particle counting.

PubMed

Sephton, J P; Johansson, L C; Williams, J M

2008-01-01

NPL has developed a low-noise current amplifier/discriminator system for radionuclides that emit low-energy electrons and X-rays. The new beta amplifier is based on the low-noise Amptek A-250 operational amplifier. The design has been configured for optimum signal to noise ratio. The new amplifier is described and results obtained using primarily electron-capture decaying radionuclides are presented. The new amplifier gives rise to higher particle detection efficiency than the previously used Atomic Energy of Canada Limited-designed amplifier. This is shown by measurements of (54)Mn and (65)Zn. The counting plateaux are significantly longer and have reduced gradients.

Ka-Band MMIC Subarray Technology Program (Ka-Mist)

NASA Technical Reports Server (NTRS)

Pottinger, W.

1995-01-01

Ka-band monolithic microwave integrated circuit (MMIC) arrays have been considered as having high potential for increasing the capability of space, aircraft, and land mobile communication systems in terms of scan performance, data rate, link margin, and flexibility while offering a significant reduction in size, weight, and power consumption. Insertion of MMIC technology into antenna systems, particularly at millimeter wave frequencies using low power and low noise amplifiers in closed proximity to the radiating elements, offers a significant improvement in the array transmit efficiency, receive system noise figure, and overall array reliability. Application of active array technology also leads to the use of advanced beamforming techniques that can improve beam agility, diversity, and adaptivity to complex signal environments. The objective of this program was to demonstrate the technical feasibility of the 'tile' array packaging architecture at EHF via the insertion of 1990 MMIC technology into a functional tile array or subarray module. The means test of this objective was to demonstrate and deliver to NASA a minimum of two 4 x 4 (16 radiating element) subarray modules operating in a transmit mode at 29.6 GHz. Available (1990) MMIC technology was chosen to focus the program effort on the novel interconnect schemes and packaging requirements rather than focusing on MMIC development. Major technical achievements of this program include the successful integration of two 4 x 4 subarray modules into a single antenna array. This 32 element array demonstrates a transmit EIRP of over 300 watts yielding an effective directive power gain in excess of 55 dB at 29.63 GHz. The array has been actively used as the transmit link in airborne/terrestrial mobile communication experiments accomplished via the ACTS satellite launched in August 1993.

Waveguide Transition for Submillimeter-Wave MMICs

NASA Technical Reports Server (NTRS)

Leong, Kevin M.; Deal, William R.; Radisic, Vesna; Mei, Xiaobing; Uyeda, Jansen; Lai, Richard; Fung, King Man; Gaier, Todd C.

2009-01-01

An integrated waveguide-to-MMIC (monolithic microwave integrated circuit) chip operating in the 300-GHz range is designed to operate well on high-permittivity semiconductor substrates typical for an MMIC amplifier, and allows a wider MMIC substrate to be used, enabling integration with larger MMICs (power amplifiers). The waveguide-to- CBCPW (conductor-backed coplanar waveguide) transition topology is based on an integrated dipole placed in the E-plane of the waveguide module. It demonstrates low loss and good impedance matching. Measurement and simulation demonstrate that the loss of the transition and waveguide loss is less than 1-dB over a 340-to-380-GHz bandwidth. A transition is inserted along the propagation direction of the waveguide. This transition uses a planar dipole aligned with the maximum E-field of the TE10 waveguide mode as an inter face between the waveguide and the MMIC. Mode conversion between the coplanar striplines (CPS) that feed the dipole and the CBCPW transmission line is accomplished using a simple air-bridge structure. The bottom side ground plane is truncated at the same reference as the top-side ground plane, leaving the end of the MMIC suspended in air.

Broadband MMIC LNAs for ALMA Band 2+3 With Noise Temperature Below 28 K

NASA Astrophysics Data System (ADS)

Cuadrado-Calle, David; George, Danielle; Fuller, Gary A.; Cleary, Kieran; Samoska, Lorene; Kangaslahti, Pekka; Kooi, Jacob W.; Soria, Mary; Varonen, Mikko; Lai, Richard; Mei, Xiaobing

2017-05-01

Recent advancements in transistor technology, such as the 35 nm InP HEMT, allow for the development of monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNAs) with performance properties that challenge the hegemony of SIS mixers as leading radio astronomy detectors at frequencies as high as 116 GHz. In particular, for the Atacama Large Millimeter and Submillimeter Array (ALMA), this technical advancement allows the combination of two previously defined bands, 2 (67-90 GHz) and 3 (84-116 GHz), into a single ultra-broadband 2+3 (67-116 GHz) receiver. With this purpose, we present the design, implementation, and characterization of LNAs suitable for operation in this new ALMA band 2+3, and also a different set of LNAs for ALMA band 2. The best LNAs reported here show a noise temperature less than 250 K from 72 to 104 GHz at room temperature, and less than 28 K from 70 to 110 GHz at cryogenic ambient temperature of 20 K. To the best knowledge of the authors, this is the lowest wideband noise ever published in the 70-110 GHz frequency range, typically designated as W-band.

Ultra-low noise miniaturized neural amplifier with hardware averaging.

PubMed

Dweiri, Yazan M; Eggers, Thomas; McCallum, Grant; Durand, Dominique M

2015-08-01

Peripheral nerves carry neural signals that could be used to control hybrid bionic systems. Cuff electrodes provide a robust and stable interface but the recorded signal amplitude is small (<3 μVrms 700 Hz-7 kHz), thereby requiring a baseline noise of less than 1 μVrms for a useful signal-to-noise ratio (SNR). Flat interface nerve electrode (FINE) contacts alone generate thermal noise of at least 0.5 μVrms therefore the amplifier should add as little noise as possible. Since mainstream neural amplifiers have a baseline noise of 2 μVrms or higher, novel designs are required. Here we apply the concept of hardware averaging to nerve recordings obtained with cuff electrodes. An optimization procedure is developed to minimize noise and power simultaneously. The novel design was based on existing neural amplifiers (Intan Technologies, LLC) and is validated with signals obtained from the FINE in chronic dog experiments. We showed that hardware averaging leads to a reduction in the total recording noise by a factor of 1/√N or less depending on the source resistance. Chronic recording of physiological activity with FINE using the presented design showed significant improvement on the recorded baseline noise with at least two parallel operation transconductance amplifiers leading to a 46.1% reduction at N = 8. The functionality of these recordings was quantified by the SNR improvement and shown to be significant for N = 3 or more. The present design was shown to be capable of generating <1.5 μVrms total recording baseline noise when connected to a FINE placed on the sciatic nerve of an awake animal. An algorithm was introduced to find the value of N that can minimize both the power consumption and the noise in order to design a miniaturized ultralow-noise neural amplifier. These results demonstrate the efficacy of hardware averaging on noise improvement for neural recording with cuff electrodes, and can accommodate the presence of high source impedances that are

Energy efficient low-noise neural recording amplifier with enhanced noise efficiency factor.

PubMed

Majidzadeh, V; Schmid, A; Leblebici, Y

2011-06-01

This paper presents a neural recording amplifier array suitable for large-scale integration with multielectrode arrays in very low-power microelectronic cortical implants. The proposed amplifier is one of the most energy-efficient structures reported to date, which theoretically achieves an effective noise efficiency factor (NEF) smaller than the limit that can be achieved by any existing amplifier topology, which utilizes a differential pair input stage. The proposed architecture, which is referred to as a partial operational transconductance amplifier sharing architecture, results in a significant reduction of power dissipation as well as silicon area, in addition to the very low NEF. The effect of mismatch on crosstalk between channels and the tradeoff between noise and crosstalk are theoretically analyzed. Moreover, a mathematical model of the nonlinearity of the amplifier is derived, and its accuracy is confirmed by simulations and measurements. For an array of four neural amplifiers, measurement results show a midband gain of 39.4 dB and a -3-dB bandwidth ranging from 10 Hz to 7.2 kHz. The input-referred noise integrated from 10 Hz to 100 kHz is measured at 3.5 μVrms and the power consumption is 7.92 μW from a 1.8-V supply, which corresponds to NEF = 3.35. The worst-case crosstalk and common-mode rejection ratio within the desired bandwidth are - 43.5 dB and 70.1 dB, respectively, and the active silicon area of each amplifier is 256 μm × 256 μm in 0.18-μm complementary metal-oxide semiconductor technology.

Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka P.; Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Lau, Judy M.; Sieth, Matthew M.; VanWinkle, Daniel; Tantawi, Sami

2011-01-01

HEMT-based receiver arrays with excellent noise and scalability are already starting to be manufactured at 100 GHz, but the advances in technology should make it possible to develop receiver modules with even greater operation frequency up to 200 GHz. A prototype heterodyne amplifier module has been developed for operation from 140 to 170 GHz using monolithic millimeter-wave integrated circuit (MMIC) low-noise InP high electron mobility transistor (HEMT) amplifiers. The compact, scalable module is centered on the 150-GHz atmospheric window using components known to operate well at these frequencies. Arrays equipped with hundreds of these modules can be optimized for many different astrophysical measurement techniques, including spectroscopy and interferometry. This module is a heterodyne receiver module that is extremely compact, and makes use of 35-nm InP HEMT technology, and which has been shown to have excellent noise temperatures when cooled cryogenically to 30 K. This reduction in system noise over prior art has been demonstrated in commercial mixers (uncooled) at frequencies of 160-180 GHz. The module is expected to achieve a system noise temperature of 60 K when cooled. An MMIC amplifier module has been designed to demonstrate the feasibility of expanding heterodyne amplifier technology to the 140 to 170-GHz frequency range for astronomical observations. The miniaturization of many standard components and the refinement of RF interconnect technology have cleared the way to mass-production of heterodyne amplifier receivers, making it a feasible technology for many large-population arrays. This work furthers the recent research efforts in compact coherent receiver modules, including the development of the Q/U Imaging ExperimenT (QUIET) modules centered at 40 and 90 GHz, and the production of heterodyne module prototypes at 90 GHz.

Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers

NASA Technical Reports Server (NTRS)

Larkoski, Patricia V.; Kangaslahti, Pekka; Samoska, Lorene; Lai, Richard; Sarkozy, Stephen

2013-01-01

We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement.

PubMed

Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

2017-02-01

Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 10 11 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement

NASA Astrophysics Data System (ADS)

Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

2017-02-01

Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 1011 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

Problems of the design of low-noise input devices. [parametric amplifiers

NASA Technical Reports Server (NTRS)

Manokhin, V. M.; Nemlikher, Y. A.; Strukov, I. A.; Sharfov, Y. A.

1974-01-01

An analysis is given of the requirements placed on the elements of parametric centimeter waveband amplifiers for achievement of minimal noise temperatures. A low-noise semiconductor parametric amplifier using germanium parametric diodes for a receiver operating in the 4 GHz band was developed and tested confirming the possibility of satisfying all requirements.

S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

NASA Astrophysics Data System (ADS)

Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

Low-Power Low-Noise Amplifier Using Attenuation-Adaptive Noise Control for Ultrasound Imaging Systems.

PubMed

Jung, Sung-Jin; Hong, Seong-Kwan; Kwon, Oh-Kyong

2017-02-01

This paper presents a low-noise amplifier (LNA) using attenuation-adaptive noise control (AANC) for ultrasound imaging systems. The proposed AANC reduces unnecessary power consumption of the LNA, which arises from useless noise floor, by controlling the noise floor of the LNA with respect to the attenuation of the ultrasound. In addition, a current feedback amplifier with a source-degenerated input stage reduces variations of the bandwidth and the closed loop gain, which are caused by the AANC. The proposed LNA was fabricated using a 0.18-[Formula: see text] CMOS process. The input-referred voltage noise density of the fabricated LNA is 1.01 [Formula: see text] at the frequency of 5 MHz. The second harmonic distortion is -53.5 dB when the input signal frequency is 5 MHz and the output voltage swing is 2 [Formula: see text]. The power consumption of the LNA using the AANC is 16.2 mW at the supply voltage of 1.8 V, which is reduced to 64% of that without using the AANC. The noise efficiency factor (NEF) of the proposed LNA is 3.69, to our knowledge, which is the lowest NEF compared with previous LNAs for ultrasound imaging.

Ultrasensitive low noise voltage amplifier for spectral analysis.

PubMed

Giusi, G; Crupi, F; Pace, C

2008-08-01

Recently we have proposed several voltage noise measurement methods that allow, at least in principle, the complete elimination of the noise introduced by the measurement amplifier. The most severe drawback of these methods is that they require a multistep measurement procedure. Since environmental conditions may change in the different measurement steps, the final result could be affected by these changes. This problem is solved by the one-step voltage noise measurement methodology based on a novel amplifier topology proposed in this paper. Circuit implementations for the amplifier building blocks based on operational amplifiers are critically discussed. The proposed approach is validated through measurements performed on a prototype circuit.

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Deri, Robert J.

1995-01-01

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier.

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, S.P.; Patterson, F.G.; Deri, R.J.

1995-07-25

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier. 11 figs.

MMIC Replacement for Gunn Diode Oscillators

NASA Technical Reports Server (NTRS)

Crowe, Thomas W.; Porterfield, David

2011-01-01

An all-solid-state replacement for high-frequency Gunn diode oscillators (GDOs) has been proposed for use in NASA s millimeter- and submillimeter-wave sensing instruments. Highly developed microwave oscillators are used to achieve a low-noise and highly stable reference signal in the 10-40-GHz band. Compact amplifiers and high-power frequency multipliers extend the signal to the 100-500-GHz band with minimal added phase noise and output power sufficient for NASA missions. This technology can achieve improved output power and frequency agility, while maintaining phase noise and stability comparable to other GDOs. Additional developments of the technology include: a frequency quadrupler to 145 GHz with 18 percent efficiency and 15 percent fixed tuned bandwidth; frequency doublers featuring 124, 240, and 480 GHz; an integrated 874-GHz subharmonic mixer with a mixer noise temperature of 3,000 K DSB (double sideband) and mixer conversion loss of 11.8 dB DSB; a high-efficiency frequency tripler design with peak output power of 23 mW and 14 mW, and efficiency of 16 and 13 percent, respectively; millimeter-wave integrated circuit (MMIC) power amplifiers to the 30-40 GHz band with high DC power efficiency; and an 874-GHz radiometer suitable for airborne observation with state-of-the-art sensitivity at room temperature and less than 5 W of total power consumption.

Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

NASA Astrophysics Data System (ADS)

Montazeri, Shirin; Wong, Wei-Ting; Coskun, Ahmet H.; Bardin, Joseph C.

2016-01-01

Low-power cryogenic low-noise amplifiers (LNAs) are desired to ease the cooling requirements of ultra-sensitive cryogenically cooled instrumentation. In this paper, the tradeoff between power and noise performance in silicon-germanium LNAs is explored to study the possibility of operating these devices from low supply voltages. A new small-signal heterojunction bipolar transistor noise model applicable to both the forward-active and saturation regimes is developed from first principles. Experimental measurements of a device across a wide range of temperatures are then presented and the dependence of the noise parameters on collector-emitter voltage is described. This paper concludes with the demonstration of a high-gain 1.8-3.6-GHz cryogenic LNA achieving a noise temperature of 3.4-5 K while consuming just 290 μW when operating at 15-K physical temperature.

Low-noise current amplifier based on mesoscopic Josephson junction.

PubMed

Delahaye, J; Hassel, J; Lindell, R; Sillanpää, M; Paalanen, M; Seppä, H; Hakonen, P

2003-02-14

We used the band structure of a mesoscopic Josephson junction to construct low-noise amplifiers. By taking advantage of the quantum dynamics of a Josephson junction, i.e., the interplay of interlevel transitions and the Coulomb blockade of Cooper pairs, we created transistor-like devices, Bloch oscillating transistors, with considerable current gain and high-input impedance. In these transistors, the correlated supercurrent of Cooper pairs is controlled by a small base current made up of single electrons. Our devices reached current and power gains on the order of 30 and 5, respectively. The noise temperature was estimated to be around 1 kelvin, but noise temperatures of less than 0.1 kelvin can be realistically achieved. These devices provide quantum-electronic building blocks that will be useful at low temperatures in low-noise circuit applications with an intermediate impedance level.

A W-band integrated power module using MMIC MESFET power amplifiers and varactor doublers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, T.C.; Chen, Seng Woon; Pande, K.

1993-12-01

A high-performance integrated power module using U-band MMIC MESFET power amplifiers in conjunction with W-band MMIC high efficiency varactor doublers has been developed for millimeter-wave system applications. This paper presents the design, fabrication, and performance of this W-band integrated power module. Measured results of the complete integrated power module show an output power of 90 mW with an overall associated gain of 29.5 dB at 94 GHz. A saturated power of over 95 mW was also achieved. These results represent the highest reported power and gain at W-band using MESFET and varactor frequency doubling technologies. This integrated power module ismore » suitable for the future 94 GHz missile seeker applications.« less

A Low-Noise Transimpedance Amplifier for BLM-Based Ion Channel Recording.

PubMed

Crescentini, Marco; Bennati, Marco; Saha, Shimul Chandra; Ivica, Josip; de Planque, Maurits; Morgan, Hywel; Tartagni, Marco

2016-05-19

High-throughput screening (HTS) using ion channel recording is a powerful drug discovery technique in pharmacology. Ion channel recording with planar bilayer lipid membranes (BLM) is scalable and has very high sensitivity. A HTS system based on BLM ion channel recording faces three main challenges: (i) design of scalable microfluidic devices; (ii) design of compact ultra-low-noise transimpedance amplifiers able to detect currents in the pA range with bandwidth >10 kHz; (iii) design of compact, robust and scalable systems that integrate these two elements. This paper presents a low-noise transimpedance amplifier with integrated A/D conversion realized in CMOS 0.35 μm technology. The CMOS amplifier acquires currents in the range ±200 pA and ±20 nA, with 100 kHz bandwidth while dissipating 41 mW. An integrated digital offset compensation loop balances any voltage offsets from Ag/AgCl electrodes. The measured open-input input-referred noise current is as low as 4 fA/√Hz at ±200 pA range. The current amplifier is embedded in an integrated platform, together with a microfluidic device, for current recording from ion channels. Gramicidin-A, α-haemolysin and KcsA potassium channels have been used to prove both the platform and the current-to-digital converter.

A Low-Noise Transimpedance Amplifier for BLM-Based Ion Channel Recording

PubMed Central

Crescentini, Marco; Bennati, Marco; Saha, Shimul Chandra; Ivica, Josip; de Planque, Maurits; Morgan, Hywel; Tartagni, Marco

2016-01-01

High-throughput screening (HTS) using ion channel recording is a powerful drug discovery technique in pharmacology. Ion channel recording with planar bilayer lipid membranes (BLM) is scalable and has very high sensitivity. A HTS system based on BLM ion channel recording faces three main challenges: (i) design of scalable microfluidic devices; (ii) design of compact ultra-low-noise transimpedance amplifiers able to detect currents in the pA range with bandwidth >10 kHz; (iii) design of compact, robust and scalable systems that integrate these two elements. This paper presents a low-noise transimpedance amplifier with integrated A/D conversion realized in CMOS 0.35 μm technology. The CMOS amplifier acquires currents in the range ±200 pA and ±20 nA, with 100 kHz bandwidth while dissipating 41 mW. An integrated digital offset compensation loop balances any voltage offsets from Ag/AgCl electrodes. The measured open-input input-referred noise current is as low as 4 fA/√Hz at ±200 pA range. The current amplifier is embedded in an integrated platform, together with a microfluidic device, for current recording from ion channels. Gramicidin-A, α-haemolysin and KcsA potassium channels have been used to prove both the platform and the current-to-digital converter. PMID:27213382

MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaNHEMTs

NASA Astrophysics Data System (ADS)

Cheng, Zhi-Qun; Cai, Yong; Liu, Jie; Zhou, Yu-Gang; Lau Kei, May; Chen, Kevin J.

2007-11-01

A microwave monolithic integrated circuit (MMIC) C-band low noise amplifier (LNA) using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors (CC-HEMTs) has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6 GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm × 100 μm device showed very high-dynamic range with decent gain and noise figure.

High-quality recording of bioelectric events. Part 2. Low-noise, low-power multichannel amplifier design.

PubMed

Metting van Rijn, A C; Peper, A; Grimbergen, C A

1991-07-01

A multichannel instrumentation amplifier, developed to be used in a miniature universal eight-channel amplifier module, is described. After discussing the specific properties of a bioelectric recording, the difficulties of meeting the demanded specifications with a design based on operational amplifiers are reviewed. Because it proved impossible to achieve the demanded combination of low noise and low power consumption using commercially available operational amplifiers, an amplifier equipped with an input stage with discrete transistors was developed. A new design concept was used to expand the design to a multichannel version with an equivalent input noise voltage of 0.35 microV RMS in a bandwidth of 0.1-100 Hz and a power consumption of 0.6 mW per channel. The results of this study are applied to miniature, universal, eight-channel amplifier modules, manufactured with thick-film production techniques. The modules can be coupled to satisfy the demand for a multiple of eight channels. The low power consumption enables the modules to be used in all kinds of portable and telemetry measurement systems and simplifies the power supply in stationary measurement systems.

Integrated Radial Probe Transition From MMIC to Waveguide

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Chattopadhyay, Goutam

2007-01-01

A radial probe transition between a monolithic microwave integrated circuit (MMIC) and a waveguide has been designed for operation at frequency of 340 GHz and to be fabricated as part of a monolithic unit that includes the MMIC. Integrated radial probe transitions like this one are expected to be essential components of future MMIC amplifiers operating at frequencies above 200 GHz. While MMIC amplifiers for this frequency range have not yet been widely used because they have only recently been developed, there are numerous potential applications for them-- especially in scientific instruments, test equipment, radar, and millimeter-wave imaging systems for detecting hidden weapons.

Note: cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors.

PubMed

Beev, Nikolai; Kiviranta, Mikko

2012-06-01

Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.

K-Band Power Enbedded Transmission Line (ETL) MMIC Amplifiers for Satellite Communication Applications

NASA Technical Reports Server (NTRS)

Tserng, Hua-Quen; Ketterson, Andrew; Saunier, Paul; McCarty, Larry; Davis, Steve

1998-01-01

The design, fabrication, and performance of K-band high-efficiency, linear power pHEMT amplifiers implemented in Embedded Transmission Line (ETL) MMIC configuration with unthinned GaAs substrate and topside grounding are reported. A three-stage amplifier achieved a power-added efficiency of 40.5% with 264 mW output at 20.2 GHz. The linear gain is 28.5 dB with 1-dB gain compression output power of 200 mW and 31% power-added efficiency. The carrier-to-third-order intermodulation ratio is approx. 20 dBc at the 1-dB compression point. A RF functional yield of more than 90% has been achieved.

Millimeter-Wave GaN MMIC Integration with Additive Manufacturing

NASA Astrophysics Data System (ADS)

Coffey, Michael

This thesis addresses the analysis, design, integration and test of microwave and millimeter-wave monolithic microwave integrated circuits (MMIC or MMICs). Recent and ongoing progress in semiconductor device fabrication and MMIC processing technology has pushed the upper limit in MMIC frequencies from millimeter-wave (30-300 GHz) to terahertz (300-3000 GHz). MMIC components operating at these frequencies will be used to improve the sensitivity and performance of radiometers, receivers for communication systems, passive remote sensing systems, transceivers for radar instruments and radio astronomy systems. However, a serious hurdle in the utilization of these MMIC components, and a main topic presented in this thesis, is the development and reliable fabrication of practical packaging techniques. The focus of this thesis is the investigation of first, the design and analysis of microwave and millimeter-wave GaN MMICs and second, the integration of those MMICs into usable waveguide components. The analysis, design and testing of various X-band (8-12 GHz) thru H-band (170-260 GHz) GaN MMIC power amplifier (PA or PAs), including a V-band (40-75 GHz) voltage controlled oscillator, is the majority of this work. Several PA designs utilizing high-efficiency techniques are analyzed, designed and tested. These examples include a 2nd harmonic injection amplifier, a Class-E amplifier fabricated with a GaN-on-SiC 300 GHz fT process, and an example of the applicability of supply-modulation with a Doherty power amplifier, all operating at 10 GHz. Two H-band GaN MMIC PAs are designed, one with integrated CPW-to-waveguide transitions for integration. The analysis of PA stability is especially important for wideband, high- fT devices and a new way of analyzing stability is explored and experimentally validated. Last, the challenges of integrating MMICs operating at millimeter-wave frequencies are discussed and assemblies using additive and traditional manufacturing are demonstrated.

A Cryogenic SiGe Low-noise Amplifier Optimized for Phased-array Feeds

NASA Astrophysics Data System (ADS)

Groves, Wavley M., III; Morgan, Matthew A.

2017-08-01

The growing number of phased-array feeds (PAF) being built for radio astronomy demonstrates an increasing need for low-noise amplifiers (LNA), which are designed for repeatability, low noise, and ease of manufacture. Specific design features that help to achieve these goals include the use of unpackaged transistors (for cryogenic operation); single-polarity biasing; straight plug-in radio frequency (RF) interfaces to facilitate installation and re-work; and the use of off-the-shelf components. The focal L-band array for the Green Bank Telescope (FLAG) is a cooperative effort by Brigham Young University and the National Radio Astronomy Observatory using warm dipole antennae and cryogenic Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) LNAs. These LNAs have an in band gain average of 38 dB and 4.85 Kelvin average noise temperature. Although the FLAG instrument was the driving instrument behind this development, most of the key features of the design and the advantages they offer apply broadly to other array feeds, including independent-beam and phased, and for many antenna types such as horn, dipole, Vivaldi, connected-bowtie, etc. This paper focuses on the unique requirements array feeds have for low-noise amplifiers and how amplifier manufacturing can accommodate these needs.

160-190 GHz Monolithic Low Noise Amplifiers

NASA Technical Reports Server (NTRS)

Kok, Y. L.; Wang, H.; Huang, T. W.; Lai, R.; Chen, Y. C.; Sholley, M.; Block, T.; Streit, D. C.; Liu, P. H.; Allen, B. R.;

Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

NASA Technical Reports Server (NTRS)

Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

1991-01-01

Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

Broadband Characterization of a 100 to 180 GHz Amplifier

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Deal, W. R.; Mei, X. B.; Lai, R.

2007-01-01

Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).

A Fully Reconfigurable Low-Noise Biopotential Sensing Amplifier With 1.96 Noise Efficiency Factor.

PubMed

Tzu-Yun Wang; Min-Rui Lai; Twigg, Christopher M; Sheng-Yu Peng

2014-06-01

A fully reconfigurable biopotential sensing amplifier utilizing floating-gate transistors is presented in this paper. By using the complementary differential pairs along with the current reuse technique, the theoretical limit for the noise efficiency factor of the proposed amplifier is below 1.5. Without consuming any extra power, floating-gate transistors are employed to program the low-frequency cutoff corner of the amplifier and to implement the common-mode feedback. A concept proving prototype chip was designed and fabricated in a 0.35 μm CMOS process occupying 0.17 mm (2) silicon area. With a supply voltage of 2.5 V, the measured midband gain is 40.7 dB and the measured input-referred noise is 2.8 μVrms. The chip was tested under several configurations with the amplifier bandwidth being programmed to 100 Hz, 1 kHz , and 10 kHz. The measured noise efficiency factors in these bandwidth settings are 1.96, 2.01, and 2.25, respectively, which are among the best numbers reported to date. The measured common-mode rejection and the supply rejection are above 70 dB . When the bandwidth is configured to be 10 kHz, the dynamic range measured at 1 kHz is 60 dB with total harmonic distortion less than 0.1%. The proposed amplifier is also demonstrated by recording electromyography (EMG), electrocardiography (ECG), electrooculography (EOG), and electroencephalography (EEG) signals from human bodies.

Cryogenic, low-noise high electron mobility transistor amplifiers for the Deep Space Network

NASA Technical Reports Server (NTRS)

Bautista, J. J.

1993-01-01

The rapid advances recently achieved by cryogenically cooled high electron mobility transistor (HEMT) low-noise amplifiers (LNA's) in the 1- to 10-GHz range are making them extremely competitive with maser amplifiers. In order to address future spacecraft navigation, telemetry, radar, and radio science needs, the Deep Space Network is investing both maser and HEMT amplifiers for its Ka-band (32-GHz) downlink capability. This article describes the current state cryogenic HEMT LNA development at Ka-band for the DSN. Noise performance results at S-band (2.3 GHz) and X-band (8.5 GHz) for HEMT's and masers are included for completeness.

A microwave cryogenic low-noise amplifier based on sige heterostructures

NASA Astrophysics Data System (ADS)

Ivanov, B. I.; Grajcar, M.; Novikov, I. L.; Vostretsov, A. G.; Il'ichev, E.

2016-04-01

A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude-frequency response of the "supercon-ducting qubit-coplanar cavity" structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.

A High-Linearity Low-Noise Amplifier with Variable Bandwidth for Neural Recoding Systems

NASA Astrophysics Data System (ADS)

Yoshida, Takeshi; Sueishi, Katsuya; Iwata, Atsushi; Matsushita, Kojiro; Hirata, Masayuki; Suzuki, Takafumi

2011-04-01

This paper describes a low-noise amplifier with multiple adjustable parameters for neural recording applications. An adjustable pseudo-resistor implemented by cascade metal-oxide-silicon field-effect transistors (MOSFETs) is proposed to achieve low-signal distortion and wide variable bandwidth range. The amplifier has been implemented in 0.18 µm standard complementary metal-oxide-semiconductor (CMOS) process and occupies 0.09 mm2 on chip. The amplifier achieved a selectable voltage gain of 28 and 40 dB, variable bandwidth from 0.04 to 2.6 Hz, total harmonic distortion (THD) of 0.2% with 200 mV output swing, input referred noise of 2.5 µVrms over 0.1-100 Hz and 18.7 µW power consumption at a supply voltage of 1.8 V.

A Low Noise Amplifier for Neural Spike Recording Interfaces

PubMed Central

Ruiz-Amaya, Jesus; Rodriguez-Perez, Alberto; Delgado-Restituto, Manuel

2015-01-01

This paper presents a Low Noise Amplifier (LNA) for neural spike recording applications. The proposed topology, based on a capacitive feedback network using a two-stage OTA, efficiently solves the triple trade-off between power, area and noise. Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. The proposed LNA has been implemented in a 130 nm CMOS technology and occupies 0.053 mm-sq. Experimental results show that the LNA offers a noise efficiency factor of 2.16 and an input referred noise of 3.8 μVrms for 1.2 V power supply. It provides a gain of 46 dB over a nominal bandwidth of 192 Hz–7.4 kHz and consumes 1.92 μW. The performance of the proposed LNA has been validated through in vivo experiments with animal models. PMID:26437411

A Low Noise Amplifier for Neural Spike Recording Interfaces.

PubMed

Ruiz-Amaya, Jesus; Rodriguez-Perez, Alberto; Delgado-Restituto, Manuel

2015-09-30

This paper presents a Low Noise Amplifier (LNA) for neural spike recording applications. The proposed topology, based on a capacitive feedback network using a two-stage OTA, efficiently solves the triple trade-off between power, area and noise. Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. The proposed LNA has been implemented in a 130 nm CMOS technology and occupies 0.053 mm-sq. Experimental results show that the LNA offers a noise efficiency factor of 2.16 and an input referred noise of 3.8 μVrms for 1.2 V power supply. It provides a gain of 46 dB over a nominal bandwidth of 192 Hz-7.4 kHz and consumes 1.92 μW. The performance of the proposed LNA has been validated through in vivo experiments with animal models.

Liquid crystal polymer substrate MMIC receiver modules for the ECE Imaging system on the DIII-D

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Y.; Ye, Y.; Yu, J-H

A new generation of millimeter-wave heterodyne imaging receiver arrays has been developed and demonstrated on the DIII-D ECEI system. Improved circuit integration, allowing for absolute calibration, improved noise performance, and shielding from out-of-band emission, is made possible by using advanced liquid crystal polymer (LCP) substrates and MMIC (Monolithic Microwave Integrated Circuit) receiver chips. This array exhibits ~ 15 dB additional gain and > 30x reduction in noise temperature compared to the previous generation and provide ECEI capability for absolute 2-D electron temperature profile measurements. Each LCP horn-waveguide module houses a 3x3 mm GaAs MMIC receiver chip, which consists of amore » low noise amplifier (LNA), balanced mixer, local oscillator multiplier chain driven by ~12 GHz input via an RF cable to the enclosure box, and IF amplifier. A proof-of-principle instrument with 5 poloidal channels was installed on DIII-D in 2017. The full proof-of-principle system installation (20 poloidal x 8 radial channels) was commissioned early in 2018. The LCP ECEI system is used for pedestal region measurements, especially focusing on temperature evolution during ELM bursting. The DIII-D ECE Imaging signal has been significantly improved with extremely effective shielding of out-of-band microwave noise which plagued previous ECE Imaging studies on DIII-D. In H-mode ELM bursting, the radial propagation of electron heat flow has been detected on DIII-D. The LCP ECE Imaging is expected to be a valuable diagnostic tool for ELM physics investigations.« less

Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

NASA Technical Reports Server (NTRS)

Lan, G. L.; Pao, C. K.; Wu, C. S.; Mandolia, G.; Hu, M.; Yuan, S.; Leonard, Regis

1991-01-01

Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

Noise and linearity optimization methods for a 1.9GHz low noise amplifier.

PubMed

Guo, Wei; Huang, Da-Quan

2003-01-01

Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade-offs. The 1.9GHz Complementary Metal-Oxide-Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.

Radio astronomy ultra-low-noise amplifier for operation at 91 cm wavelength in high RFI environment

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Zakharenko, V. V.; Ulyanov, O. M.

2016-02-01

An ultra-low-noise input amplifier intended for a use in a radio telescope operating at 91 cm wavelength is presented. The amplifier noise temperatures are 12.8 ± 1.5 and 10.0 ± 1.5 K at ambient temperatures of 293 and 263 K respectively. The amplifier does not require cryogenic cooling. It can be quickly put in operation thus shortening losses in the telescope observation time. High linearity of the amplifier (output power at 1 dB gain compression P1dB ≥ 22 dBm, output third order intercept point OIP3 ≥ 37 dBm) enables the telescope operation in highly urbanized and industrialized regions. To obtain low noise characteristics along with high linearity, high-electron-mobility field-effect transistors were used in parallel in the circuit developed. The transistors used in the amplifier are cost-effective and commercially available. The circuit solution is recommended for similar devices working in ultra-high frequency band.

Noise and noise figure of vertical-cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode

NASA Astrophysics Data System (ADS)

Wen, Pengyue; Sanchez, Michael; Gross, Matthias; Esener, Sadik C.

2003-05-01

In this paper, the noise properties of vertical cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode are studied. Expressions for noise sources contributing to the total noise detected at amplifier output are derived, based on the photon statistics master equations. The noise figure, defined as the degradation of signal-to-noise ratio (SNR), is analyzed using the assumption that spontaneous emission-signal beat noise dominates. The analysis shows that the noise figure of reflection mode VCSOAs has the same values as that in transmission mode as long as amplifier gain is high (G>>1). Furthermore, simulations depict the dependence of noise figure on device parameters and bias conditions, as well as reveal the importance of the low reflectivity front mirror and the high reflectivity rear mirror for low noise operation. In addition, the noise figure analysis results are compared with experimental measurements, in which amplified spontaneous emission (ASE) power is measured by an optical spectrum analyzer and the noise figure is obtained from the ASE power and the amplifier gain. The measured data are in good agreement with the theoretical predictions.

Transformer-Feedback Interstage Bandwidth Enhancement for MMIC Multistage Amplifiers

NASA Astrophysics Data System (ADS)

Nikandish, Gholamreza; Medi, Ali

2015-02-01

The transformer-feedback (TRFB) interstage bandwidth enhancement technique for broadband multistage amplifiers is presented. Theory of the TRFB bandwidth enhancement and the design conditions for maximum bandwidth, maximally flat gain, and maximally flat group delay are provided. It is shown that the TRFB bandwidth enhancement can provide higher bandwidth compared to the conventional techniques based on reactive impedance matching networks. A three-stage low-noise amplifier (LNA) monolithic microwave integrated circuit with the TRFB between its consecutive stages is designed and implemented in a 0.1- μm GaAs pHEMT process. The TRFB is realized by coupling between the drain bias lines of transistors. The reuse of bias lines leads to bandwidth enhancement without increasing the chip area and power consumption. The LNA features average gain of 23 dB and 3-dB bandwidth of 11-39 GHz. It provides a noise figure of 2.1-3.0 dB and an output 1-dB compression point of 8.6 dBm, while consuming 40 mA of current from a 2-V supply.

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

NASA Technical Reports Server (NTRS)

Pinsukanjana, Paul R.; Samoska, Lorene A.; Gaier, Todd C.; Smith, R. Peter; Ksendzov, Alexander; Fitzsimmons, Michael J.; Martin, Suzanne C.

1998-01-01

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this

High-Performance Solid-State W-Band Power Amplifiers

NASA Technical Reports Server (NTRS)

Gaier, Todd; Samoska, Lorene; Wells, Mary; Ferber, Robert; Pearson, John; Campbell, April; Peralta, Alejandro; Swift, Gerald; Yocum, Paul; Chung, Yun

2003-01-01

The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.

Low phase noise oscillator using two parallel connected amplifiers

NASA Technical Reports Server (NTRS)

Kleinberg, Leonard L.

1987-01-01

A high frequency oscillator is provided by connecting two amplifier circuits in parallel where each amplifier circuit provides the other amplifier circuit with the conditions necessary for oscillation. The inherent noise present in both amplifier circuits causes the quiescent current, and in turn, the generated frequency, to change. The changes in quiescent current cause the transconductance and the load impedance of each amplifier circuit to vary, and this in turn results in opposing changes in the input susceptance of each amplifier circuit. Because the changes in input susceptance oppose each other, the changes in quiescent current also oppose each other. The net result is that frequency stability is enhanced.

W-Band InP Wideband MMIC LNA with 30K Noise Temperature

NASA Technical Reports Server (NTRS)

Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

2000-01-01

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

A High Input Impedance Low Noise Integrated Front-End Amplifier for Neural Monitoring.

PubMed

Zhou, Zhijun; Warr, Paul A

2016-12-01

Within neural monitoring systems, the front-end amplifier forms the critical element for signal detection and pre-processing, which determines not only the fidelity of the biosignal, but also impacts power consumption and detector size. In this paper, a novel combined feedback loop-controlled approach is proposed to compensate for input leakage currents generated by low noise amplifiers when in integrated circuit form alongside signal leakage into the input bias network. This loop topology ensures the Front-End Amplifier (FEA) maintains a high input impedance across all manufacturing and operational variations. Measured results from a prototype manufactured on the AMS 0.35 [Formula: see text] CMOS technology is provided. This FEA consumes 3.1 [Formula: see text] in 0.042 [Formula: see text], achieves input impedance of 42 [Formula: see text], and 18.2 [Formula: see text] input-referred noise.

Phase noise in RF and microwave amplifiers.

PubMed

Boudot, Rodolphe; Rubiola, Enrico

2012-12-01

Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase φ(t) is Sφ(f) = b(0) + b(-1)/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b(0) is proportional to the reciprocal of the carrier power P(0). By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b(-1) is a parameter of the amplifier, constant in a wide range of P(0). The consequences are the following: Connecting m equal amplifiers in parallel, b(-1) is 1/m times that of one device. Cascading m equal amplifiers, b(-1) is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b(-1) is m(2) times that of the amplifier alone. The feedforward amplifier exhibits extremely low b(-1) because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to microwaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

NASA Astrophysics Data System (ADS)

Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P.

2016-01-01

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vissers, M. R.; Erickson, R. P.; Ku, H.-S.

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approachesmore » the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.« less

Design of Low-Noise Output Amplifiers for P-channel Charge-Coupled Devices Fabricated on High-Resistivity Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haque, S; Frost, F Dion R.; Groulx, R

2011-12-22

We describe the design and optimization of low-noise, single-stage output amplifiers for p-channel charge-coupled devices (CCDs) used for scientific applications in astronomy and other fields. The CCDs are fabricated on high-resistivity, 4000–5000 -cm, n-type silicon substrates. Single-stage amplifiers with different output structure designs and technologies have been characterized. The standard output amplifier is designed with an n{sup +} polysilicon gate that has a metal connection to the sense node. In an effort to lower the output amplifier readout noise by minimizing the capacitance seen at the sense node, buried-contact technology has been investigated. In this case, the output transistor hasmore » a p{sup +} polysilicon gate that connects directly to the p{sup +} sense node. Output structures with buried-contact areas as small as 2 μm × 2 μm are characterized. In addition, the geometry of the source-follower transistor was varied, and we report test results on the conversion gain and noise of the various amplifier structures. By use of buried-contact technology, better amplifier geometry, optimization of the amplifier biases and improvements in the test electronics design, we obtain a 45% reduction in noise, corresponding to 1.7 e{sup -} rms at 70 kpixels/sec.« less

Ka-Band Waveguide Hybrid Combiner for MMIC Amplifiers With Unequal and Arbitrary Power Output Ratio

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Chevalier, Christine T.; Wintucky, Edwin G.; Freeman, Jon C.

2009-01-01

The design, simulation and characterization of a novel Ka-band (32.05 +/- 0.25 GHz) rectangular waveguide branch-line hybrid unequal power combiner is presented. The manufactured combiner was designed to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The application of the branch-line hybrid for combining two MMIC power amplifiers with output power ratio of two is demonstrated. The measured combining efficiency is approximately 93 percent over the above frequency band.

Low noise tuned amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L. L. (Inventor)

1984-01-01

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

Novel matched amplifiers with low noise positive feedback. Part II: Resistive-capacitive feedback

NASA Astrophysics Data System (ADS)

Bruck, Y.; Zakharenko, V.

2010-02-01

This article is a continuation of consideration for an amplifier with resistive positive feedback (RPF) (Bruck (2008), 'Novel Matched LNA with Low Noise Positive Feedback. Part 1: General Features and Resistive Feedback', International Journal of Electronics, 95, 441-456). We propose here new configuration schematics of a transformer-less selective LNA with resistive-capacitive positive feedback (RCPF). A circuit of an amplifier with a transistor connected into a circuit with a common base (CB) configuration is analysed in detail. RCPF and RPF circuits are compared. It is shown that the LNA RCPF provides any pass-band, a good level of input and output matching, a minimum noise temperature which is significantly lower than that of the LNA RPF, a rather high linearity, and stability of amplification. The simulation results and some experimental data for the amplifiers intended for use in the LOFAR radiotelescope (Konovalenko et al. (2003), 'Thirty Element Array Antenna as a Prototype of a Huge Low-Frequency Radio Telescope,' Experimental Astronomy, 16, 149-164; Konovalenko (2007), 'Ukrainian Contribution to LOFAR', A scientific workshop, organised by LOFAR/ASTRON' Emmen, Netherlands, 23-27. http://www.lofar.org/workshop) are given. It is assumed that such devices are of a special interest for high-frequency integral circuits (IC).

New low-level a-c amplifier provides adjustable noise cancellation and automatic temperature compensation

NASA Technical Reports Server (NTRS)

Smith, J. R., Jr.

1964-01-01

Circuit utilizing a transistorized differential amplifier is developed for biomedical use. This low voltage operating circuit provides adjustable cancellation at the input for unbalanced noise signals, and automatic temperature compensation is accomplished by a single active element across the input-output ends.

Development of a cryogenic DC-low noise amplifier for SQuID-based readout electronics

NASA Astrophysics Data System (ADS)

Macculi, C.; Torrioli, G.; Di Giorgio, A.; Spinoglio, L.; Piro, Luigi

2014-07-01

We present the preliminary results of the design and test activities for a DC cryogenic low noise amplifier for the SAFARI imaging spectrometer, planned to be onboard the SPICA mission, necessary not only to drive, as usual, the voltage signal produced by the SQuID but also to boost such signals over about 7 meter of path towards the warm feedback electronics. This development has been done in the framework of the mission preparation studies, within the European Consortium for the development of the SAFARI instrument. The actual configuration of the SAFARI focal plane assembly (FPA), indeed, foresees a long distance to the warm back end electronics. It is therefore mandatory to boost the faint electric signal coming from the SQuID device by keeping under control both power dissipation and noise: this is the main role of the designed Cryogenic Low Noise Amplifier (LNA). Working at 136K, it has a differential input gain-stage, and a differential balanced voltage buffer output stage, running at few mW target overall power. At present the design is based on the use of Heterojunction Si:Ge transistors, the required bandwidth is DC-4MHz and the required noise lower than 1 nV/rtHz.

A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

NASA Technical Reports Server (NTRS)

Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

1987-01-01

A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

A two layer hermetic-like coating process for on-wafer encapsulation of GaAs MMIC`s

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaleta, T.; Varmazis, C.; Carney, J.P.

1995-12-31

The authors have developed a low-cost, manufacturable, 2-layer coating process for on-wafer encapsulation of GaAs MMICs. This packaging approach takes advantage of the low dielectric permittivity of polymers such as Benzocyclobutene (BCB) and the sealing properties of ceramics such as SiC to provide both mechanical protection to MMICs during handling and also hermetic-like equivalence to moisture with predictable changes in the electrical performance of the coated MMICs. The effects of coatings on FET parameters, spiral inductors and a two stage X-Band LNA have been investigated. Results on FETs indicate that the internode capacitances Cgs and Cgd exhibited the same incrementalmore » change of 0.035 pF/mm (3 and 25 % increase respectively), while Cds changed by 0.051 pF/mm (27% increase) with very minimal changes in the other FET parameters. The only observed change in spiral inductors was a 112% increase in Cp from 0.006 pF to 0.013 pF. The LNA exhibited a 1 GHz shift in frequency response from 7 to 11 GHz to 6 to 11 GHz with no substantial changes in gain and noise figure. Preliminary reliability investigations on coated devices did not show any failures after 150 hours in autoclave (120C, 100% humidity).« less

Ka-Band Waveguide Hybrid Combiner for MMIC Amplifiers with Unequal and Arbitrary Power Output Ratio

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Chevalier, Christine T.; Wintucky, Edwin G.; Freeman, Jon C.

2009-01-01

The design, simulation and characterization of a novel Ka-band (32.05 +/- 0.25 GHz) rectangular waveguide branchline hybrid unequal power combiner is presented. The manufactured combiner was designed to combine input signals, which are nearly in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The application of the branch-line hybrid for combining two monolithic microwave integrated circuit (MMIC) power amplifiers with output power ratio of two is demonstrated. The measured combining efficiency is 92.9% at the center frequency of 32.05 GHz.

Low-noise cryogenic transmission line

NASA Technical Reports Server (NTRS)

Norris, D.

1987-01-01

New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.

Optimization of noise in non-integrated instrumentation amplifier for the amplification of very low electrophysiological [corrected] signals. Case of electro cardio graphic signals (ECG).

PubMed

Ngounou, Guy Merlin; Kom, Martin

2014-12-01

In this paper we present an instrumentation amplifier with discrete elements and optimized noise for the amplification of very low signals. In amplifying signals of very weak amplitude, the noise can completely absorb these signals if the used amplifier does not present the optimal guarantee to minimize the noise. Based on related research and re-viewing of recent patents Journal of Medical Systems, 30:205-209, 2006, we suggest an approach of noise reduction in amplification much more thoroughly than re-viewing of recent patents and we deduce from it the general criteria necessary and essential to achieve this optimization. The comparison of these criteria with the provisions adopted in practice leads to the inadequacy of conventional amplifiers for effective noise reduction. The amplifier we propose is an instrumentation amplifier with active negative feedback and optimized noise for the amplification of signals with very low amplitude. The application of this method in the case of electro cardio graphic signals (ECG) provides simulation results fully in line with forecasts.

Ka-Band Waveguide Three-Way Serial Combiner for MMIC Amplifiers

NASA Technical Reports Server (NTRS)

Wintucky, Edwin G.; Freeman, Jon C.; Chevalier, Christine T.

2012-01-01

In this innovation, the three-way combiner consists internally of two branch-line hybrids that are connected in series by a short length of waveguide. Each branch-line hybrid is designed to combine input signals that are in phase with an amplitude ratio of two. The combiner is constructed in an E-plane split-block arrangement and is precision machined from blocks of aluminum with standard WR-28 waveguide ports. The port impedances of the combiner are matched to that of a standard WR-28 waveguide. The component parts include the power combiner and the MMIC (monolithic microwave integrated circuit) power amplifiers (PAs). The three-way series power combiner is a six-port device. For basic operation, power that enters ports 3, 5, and 6 is combined in phase and appears at port 1. Ports 2 and 4 are isolated ports. The application of the three-way combiner for combining three PAs with unequal output powers was demonstrated. NASA requires narrow-band solid-state power amplifiers (SSPAs) at Ka-band frequencies with output power in the range of 3 to 5 W for radio or gravity science experiments. In addition, NASA also requires wideband, high-efficiency SSPAs at Ka-band frequencies with output power in the range of 5 to 15 W for high-data-rate communications from deep space to Earth. The three-way power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA s deep-space frequency band.

Phase-Noise and Amplitude-Noise Measurement of Low-Power Signals

NASA Technical Reports Server (NTRS)

Rubiola, Enrico; Salik, Ertan; Yu, Nan; Maleki, Lute

2004-01-01

Measuring the phase fluctuation between a pair of low-power microwave signals, the signals must be amplified before detection. In such cases the phase noise of the amplifier pair is the main cause of 1/f background noise of the instrument. this article proposes a scheme that makes amplification possible while rejecting the close in 1/f (flicker) noise of the two amplifiers. Noise rejection, which relies upon the understanding of the amplifier noise mechanism does not require averaging. Therefore, our scheme can also be the detector of a closed loop noise reduction system. the first prototype, compared to a traditional saturated mixer system under the same condition, show a 24 dB noise reduction of the 1/f region.

Development of a Low-Noise High Common-Mode-Rejection Instrumentation Amplifier. M.S. Thesis

NASA Technical Reports Server (NTRS)

Rush, Kenneth; Blalock, T. V.; Kennedy, E. J.

1975-01-01

Several previously used instrumentation amplifier circuits were examined to find limitations and possibilities for improvement. One general configuration is analyzed in detail, and methods for improvement are enumerated. An improved amplifier circuit is described and analyzed with respect to common mode rejection and noise. Experimental data are presented showing good agreement between calculated and measured common mode rejection ratio and equivalent noise resistance. The amplifier is shown to be capable of common mode rejection in excess of 140 db for a trimmed circuit at frequencies below 100 Hz and equivalent white noise below 3.0 nv/square root of Hz above 1000 Hz.

Low noise buffer amplifiers and buffered phase comparators for precise time and frequency measurement and distribution

NASA Technical Reports Server (NTRS)

Eichinger, R. A.; Dachel, P.; Miller, W. H.; Ingold, J. S.

1982-01-01

Extremely low noise, high performance, wideband buffer amplifiers and buffered phase comparators were developed. These buffer amplifiers are designed to distribute reference frequencies from 30 KHz to 45 MHz from a hydrogen maser without degrading the hydrogen maser's performance. The buffered phase comparators are designed to intercompare the phase of state of the art hydrogen masers without adding any significant measurement system noise. These devices have a 27 femtosecond phase stability floor and are stable to better than one picosecond for long periods of time. Their temperature coefficient is less than one picosecond per degree C, and they have shown virtually no voltage coefficients.

Up-converted 1/f PM and AM noise in linear HBT amplifiers.

PubMed

Ferre-Pikal, Eva S; Savage, Frederick H

2008-08-01

In this paper we describe a technique to predict the 1/f phase modulation (PM) and 1/f amplitude modulation (AM) noise due to up-conversion of 1/f baseband current noise in microwave heterojunction bipolar transistor (HBT) amplifiers. We obtain an accurate model for the amplifier and find the expression for voltage gain in terms of DC bias, transistor parameters, and circuit components. Theoretical 1/f PM and AM noise sensitivities to 1/f baseband current noise are then found by applying the definitions of PM and AM noise to the gain expression of the amplifier. Measurements of PM and AM sensitivities at 500 MHz and 1 GHz were in good agreement with the values predicted by theory, verifying the validity of this technique. This method can be used to optimize amplifier design for low PM and AM noise. We show that the amplifier PM noise can be reduced by 9 dB by adjusting the value of the input coupling capacitor.

Wideband low-noise variable-gain BiCMOS transimpedance amplifier

NASA Astrophysics Data System (ADS)

Meyer, Robert G.; Mack, William D.

1994-06-01

A new monolithic variable gain transimpedance amplifier is described. The circuit is realized in BiCMOS technology and has measured gain of 98 kilo ohms, bandwidth of 128 MHz, input noise current spectral density of 1.17 pA/square root of Hz and input signal-current handling capability of 3 mA.

A wideband CMOS single-ended low noise amplifier employing negative resistance technique

NASA Astrophysics Data System (ADS)

Guo, Benqing; Chen, Hongpeng; Wang, Xuebing; Chen, Jun; Li, Yueyue; Jin, Haiyan; Yang, Yongjun

2018-02-01

A wideband common-gate CMOS low noise amplifier with negative resistance technique is proposed. A novel single-ended negative resistance structure is employed to improve gain and noise of the LNA. The inductor resonating is adopted at the input stage and load stage to meet wideband matching and compensate gain roll-off at higher frequencies. Implemented in a 0.18 μm CMOS technology, the proposed LNA demonstrates in simulations a maximal gain of 16.4 dB across the 3 dB bandwidth of 0.2-3 GHz. The in-band noise figure of 3.4-4.7 dB is obtained while the IIP3 of 5.3-6.8 dBm and IIP2 of 12.5-17.2 dBm are post-simulated in the designed frequency band. The LNA core consumes a power dissipation of 3.8 mW under a 1.5 V power supply.

Simple nonlinearity evaluation and modeling of low-noise amplifiers with application to radio astronomy receivers.

PubMed

Casas, F J; Pascual, J P; de la Fuente, M L; Artal, E; Portilla, J

2010-07-01

This paper describes a comparative nonlinear analysis of low-noise amplifiers (LNAs) under different stimuli for use in astronomical applications. Wide-band Gaussian-noise input signals, together with the high values of gain required, make that figures of merit, such as the 1 dB compression (1 dBc) point of amplifiers, become crucial in the design process of radiometric receivers in order to guarantee the linearity in their nominal operation. The typical method to obtain the 1 dBc point is by using single-tone excitation signals to get the nonlinear amplitude to amplitude (AM-AM) characteristic but, as will be shown in the paper, in radiometers, the nature of the wide-band Gaussian-noise excitation signals makes the amplifiers present higher nonlinearity than when using single tone excitation signals. Therefore, in order to analyze the suitability of the LNA's nominal operation, the 1 dBc point has to be obtained, but using realistic excitation signals. In this work, an analytical study of compression effects in amplifiers due to excitation signals composed of several tones is reported. Moreover, LNA nonlinear characteristics, as AM-AM, total distortion, and power to distortion ratio, have been obtained by simulation and measurement with wide-band Gaussian-noise excitation signals. This kind of signal can be considered as a limit case of a multitone signal, when the number of tones is very high. The work is illustrated by means of the extraction of realistic nonlinear characteristics, through simulation and measurement, of a 31 GHz back-end module LNA used in the radiometer of the QUIJOTE (Q U I JOint TEnerife) CMB experiment.

Noise reduction in plasmonic amplifiers

NASA Astrophysics Data System (ADS)

Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

2018-06-01

Surface plasmon polaritons amplification give the possibility to overcome strong absorption in metals and design truly nanoscale devices for on-chip photonic circuits. However, the process of stimulated emission in the gain medium is inevitably accompanied by spontaneous emission, which greatly increases the noise power. Herein we present an efficient strategy for noise reduction in plasmonic amplifiers,which is based on gain redistribution along the amplifier. We show that even a very small gain redistribution (∼3%) makes it possible to increase the signal-to-noise ratio by ∼100% and improve the bit error ratio by orders of magnitude.

Cross-correlation measurement of quantum shot noise using homemade transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Hashisaka, Masayuki; Ota, Tomoaki; Yamagishi, Masakazu; Fujisawa, Toshimasa; Muraki, Koji

2014-05-01

We report a cross-correlation measurement system, based on a new approach, which can be used to measure shot noise in a mesoscopic conductor at milliKelvin temperatures. In contrast to other measurement systems in which high-speed low-noise voltage amplifiers are commonly used, our system employs homemade transimpedance amplifiers (TAs). The low input impedance of the TAs significantly reduces the crosstalk caused by unavoidable parasitic capacitance between wires. The TAs are designed to have a flat gain over a frequency band from 2 kHz to 1 MHz. Low-noise performance is attained by installing the TAs at a 4 K stage of a dilution refrigerator. Our system thus fulfills the technical requirements for cross-correlation measurements: low noise floor, high frequency band, and negligible crosstalk between two signal lines. Using our system, shot noise generated at a quantum point contact embedded in a quantum Hall system is measured. The good agreement between the obtained shot-noise data and theoretical predictions demonstrates the accuracy of the measurements.

Cross-correlation measurement of quantum shot noise using homemade transimpedance amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hashisaka, Masayuki, E-mail: hashisaka@phys.titech.ac.jp; Ota, Tomoaki; Yamagishi, Masakazu

We report a cross-correlation measurement system, based on a new approach, which can be used to measure shot noise in a mesoscopic conductor at milliKelvin temperatures. In contrast to other measurement systems in which high-speed low-noise voltage amplifiers are commonly used, our system employs homemade transimpedance amplifiers (TAs). The low input impedance of the TAs significantly reduces the crosstalk caused by unavoidable parasitic capacitance between wires. The TAs are designed to have a flat gain over a frequency band from 2 kHz to 1 MHz. Low-noise performance is attained by installing the TAs at a 4 K stage of amore » dilution refrigerator. Our system thus fulfills the technical requirements for cross-correlation measurements: low noise floor, high frequency band, and negligible crosstalk between two signal lines. Using our system, shot noise generated at a quantum point contact embedded in a quantum Hall system is measured. The good agreement between the obtained shot-noise data and theoretical predictions demonstrates the accuracy of the measurements.« less

Low-noise two-wired buffer electrodes for bioelectric amplifiers.

PubMed

Degen, Thomas; Torrent, Simon; Jäckel, Heinz

2007-07-01

Active buffer electrodes are known to improve the immunity of bioelectric recordings against power line interferences. A survey of published work reveals that buffer electrodes are almost exclusively designed using operational amplifiers (opamps). In this paper, we discuss the advantage of utilizing a single transistor instead. This allows for a simple electrode, which is small and requires only two wires. In addition, a single transistor adds considerably less noise when compared to an opamp with the same power consumption. We then discuss output resistance and gain as well as their respective effect on the common mode rejection ratio (CMRR). Finally, we demonstrate the use of two-wired buffer electrodes for a bioelectric amplifier.

Progress in MMIC technology for satellite communications

NASA Technical Reports Server (NTRS)

Haugland, Edward J.; Leonard, Regis F.

1987-01-01

NASA's Lewis Research Center is actively involved in the development of monolithic microwave and millimeter-wave integrated circuits (MMICs). The approach of the program is to support basic research under grant or in-house, while MMIC development is done under contract, thereby facilitating the transfer of technology to users. Preliminary thrusts of the program have been the extension of technology to higher frequencies (60 GHz), degrees of complexity, and performance (power, efficiency, noise figure) by utilizing novel circuit designs, processes, and materials. A review of the progress made so far is presented.

Design and analysis of high gain and low noise figure CMOS low noise amplifier for Q-band nano-sensor application

NASA Astrophysics Data System (ADS)

Suganthi, K.; Malarvizhi, S.

2018-03-01

A high gain, low power, low Noise figure (NF) and wide band of milli-meter Wave (mmW) circuits design at 50 GHz are used for Radio Frequency (RF) front end. The fundamental necessity of a receiver front-end includes perfect output and input impedance matching and port-to-port isolation with high gain and low noise over the entire band of interest. In this paper, a design of Cascade-Cascode CMOS LNA circuit at 50 GHz for Q-band application is proposed. The design of Low noise amplifier at 50 GHz using Agilent ADS tool with microstrip lines which provides simplicity in fabrication and less chip area. The low off-leakage current Ioff can be maintained with high K-dielectrics CMOS structure. Nano-scale electronics can be achieved with increased robustness. The design has overall gain of 11.091 dB and noise figure of 2.673 dB for the Q-band of 48.3 GHz to 51.3 GHz. Impedance matching is done by T matching network and the obtained input and output reflection coefficients are S11 = <-10 dB and S22 = <-10 dB. Compared to Silicon (Si) material, Wide Band Gap semiconductor materials used attains higher junction temperatures which is well matched to ceramics used in packaging technology, the protection and reliability also can be achieved with the electronic packaging. The reverse transmission coefficient S21 is less than -21 dB has shown that LNA has better isolation between input and output, Stability factor greater than 1 and Power is also optimized in this design. Layout is designed, power gain of 4.6 dB is achieved and area is optimized which is nearly equal to 502 740 μm2. The observed results show that the proposed Cascade-Cascode LNA design can find its suitability in future milli-meter Wave Radar application.

A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in Advanced Laser Interferometer Gravitational wave Observatory suspensions.

PubMed

Lockerbie, N A; Tokmakov, K V

2014-11-01

This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations-this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m(-1)(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

NASA Astrophysics Data System (ADS)

Lockerbie, N. A.; Tokmakov, K. V.

2014-11-01

This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m-1(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

Raman-noise-induced noise-figure limit for chi (3) parametric amplifiers

NASA Astrophysics Data System (ADS)

Voss, Paul L.; Kumar, Prem

2004-03-01

The nonzero response time of the Kerr [chi (3)] nonlinearity determines the quantum-limited noise figure of c3 parametric amplifiers. This nonzero response time of the nonlinearity requires coupling of the parametric amplification process to a molecular-vibration phonon bath, causing the addition of excess noise through Raman gain or loss at temperatures above 0 K. The effect of this excess noise on the noise figure can be surprisingly significant. We derive analytical expressions for this quantum-limited noise figure for phase-insensitive operation of a chi (3) amplifier and show good agreement with published noise-figure measurements.

Ultrastable low-noise current amplifier: a novel device for measuring small electric currents with high accuracy.

PubMed

Drung, D; Krause, C; Becker, U; Scherer, H; Ahlers, F J

2015-02-01

An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA's transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.

Ultrastable low-noise current amplifier: A novel device for measuring small electric currents with high accuracy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drung, D.; Krause, C.; Becker, U.

2015-02-15

An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA’s transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibratemore » both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.« less

Ultrastable low-noise current amplifier: A novel device for measuring small electric currents with high accuracy

NASA Astrophysics Data System (ADS)

Drung, D.; Krause, C.; Becker, U.; Scherer, H.; Ahlers, F. J.

2015-02-01

An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA's transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.

Cryogenically cooled low-noise amplifier for radio-astronomical observations and centimeter-wave deep-space communications systems

NASA Astrophysics Data System (ADS)

Vdovin, V. F.; Grachev, V. G.; Dryagin, S. Yu.; Eliseev, A. I.; Kamaletdinov, R. K.; Korotaev, D. V.; Lesnov, I. V.; Mansfeld, M. A.; Pevzner, E. L.; Perminov, V. G.; Pilipenko, A. M.; Sapozhnikov, B. D.; Saurin, V. P.

2016-01-01

We report a design solution for a highly reliable, low-noise and extremely efficient cryogenically cooled transmit/receive unit for a large antenna system meant for radio-astronomical observations and deep-space communications in the X band. We describe our design solution and the results of a series of laboratory and antenna tests carried out in order to investigate the properties of the cryogenically cooled low-noise amplifier developed. The transmit/receive unit designed for deep-space communications (Mars missions, radio observatories located at Lagrangian point L2, etc.) was used in practice for communication with live satellites including "Radioastron" observatory, which moves in a highly elliptical orbit.

Response of a lock-in amplifier to noise

NASA Astrophysics Data System (ADS)

Van Baak, D. A.; Herold, George

2014-08-01

The "lock-in" detection technique can extract, from a possibly noisy waveform, the amplitude of a signal that is synchronous with a known reference signal. This paper examines the effects of input noise on the output of a lock-in amplifier. We present quantitative predictions for the root-mean-square size of the resulting fluctuations and for the spectral density of the noise at the output of a lock-in amplifier. Our results show how a lock-in amplifier can be used to measure the spectral density of noise in the case of a noise-only input signal. Some implications of the theory, familiar and surprising, are tested against experimental data.

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

NASA Technical Reports Server (NTRS)

Ngo, Catherine

2001-01-01

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

X-band ultralow-noise maser amplifier performance

NASA Technical Reports Server (NTRS)

Glass, G. W.; Ortiz, G. G.; Johnson, D. L.

1994-01-01

Noise temperature measurements of an 8440-MHz ultralow noise maser amplifier (ULNA) have been performed at subatmospheric, liquid-helium temperatures. The traveling-wave maser was operated while immersed in a liquid helium bath. The lowest input noise temperature measured was 1.43 +/- 0.16 K at a physical temperature of 1.60 K. At this physical temperature, the observed gain per centimeter of ruby was 4.9 dB/cm. The amplifier had a 3-dB bandwidth of 76 MHz.

Power-Amplifier Module for 145 to 165 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Peralta, Alejandro

2007-01-01

A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.

A low-noise transimpedance amplifier for the detection of “Violin-Mode” resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lockerbie, N. A.; Tokmakov, K. V.

2014-11-15

This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level “Violin-Mode” (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent “noise-gain peaking” arising from large area photodiode (and cable) capacitances, and which also usefullymore » separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes’ two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m{sup −1}(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.« less

A model for phase noise generation in amplifiers.

PubMed

Tomlin, T D; Fynn, K; Cantoni, A

2001-11-01

In this paper, a model is presented for predicting the phase modulation (PM) and amplitude modulation (AM) noise in bipolar junction transistor (BJT) amplifiers. The model correctly predicts the dependence of phase noise on the signal frequency (at a particular carrier offset frequency), explains the noise shaping of the phase noise about the signal frequency, and shows the functional dependence on the transistor parameters and the circuit parameters. Experimental studies on common emitter (CE) amplifiers have been used to validate the PM noise model at carrier frequencies between 10 and 100 MHz.

Gain dynamics of clad-pumped Yb-fiber amplifier and intensity noise control.

PubMed

Zhao, Jian; Guiraud, Germain; Floissat, Florian; Gouhier, Benoit; Rota-Rodrigo, Sergio; Traynor, Nicholas; Santarelli, Giorgio

2017-01-09

Gain dynamics study provides an attractive method to understand the intensity noise behavior in fiber amplifiers. Here, the gain dynamics of a medium power (5 W) clad-pumped Yb-fiber amplifier is experimentally evaluated by measuring the frequency domain transfer functions for the input seed and pump lasers from 10 Hz to 1 MHz. We study gain dynamic behavior of the fiber amplifier in the presence of significant residual pump power (compared to the seed power), showing that the seed transfer function is strongly saturated at low Fourier frequencies while the pump power modulation transfer function is nearly unaffected. The characterization of relative intensity noise (RIN) of the fiber amplifier is well explained by the gain dynamics analysis. Finally, a 600 kHz bandwidth feedback loop using an acoustic-optical modulator (AOM) controlling the seed intensity is successfully demonstrated to suppress the broadband laser intensity noise. A maximum noise reduction of about 30 dB is achieved leading to a RIN of -152 dBc/Hz (~1 kHz-10 MHz) at 2.5 W output power.

Josephson junction microwave amplifier in self-organized noise compression mode

PubMed Central

Lähteenmäki, Pasi; Vesterinen, Visa; Hassel, Juha; Seppä, Heikki; Hakonen, Pertti

2012-01-01

The fundamental noise limit of a phase-preserving amplifier at frequency is the standard quantum limit . In the microwave range, the best candidates have been amplifiers based on superconducting quantum interference devices (reaching the noise temperature at 700 MHz), and non-degenerate parametric amplifiers (reaching noise levels close to the quantum limit at 8 GHz). We introduce a new type of an amplifier based on the negative resistance of a selectively damped Josephson junction. Noise performance of our amplifier is limited by mixing of quantum noise from Josephson oscillation regime down to the signal frequency. Measurements yield nearly quantum-limited operation, at 2.8 GHz, owing to self-organization of the working point. Simulations describe the characteristics of our device well and indicate potential for wide bandwidth operation. PMID:22355788

Excess noise in gain-guided amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deutsch, I.H.; Garrison, J.C.; Wright, E.M.

1991-06-01

A second-quantized theory of the radiation field is used to study the origin of the excess noise observed in gain-guided amplifiers. We find that the reduction of the signal-to-noise ratio is a function of the length of the amplifier, and thus the enhancement of the noise is a propagation effect arising from longitudinally inhomogeneous gain of the noise rather than from an excess of local spontaneous emission. We confirm this conclusion by showing that the microscopic rate of spontaneous emission into a given non-power-orthogonal cavity mode is not enhanced by the Petermann factor. In addition, we illustrate the difficulties associatedmore » with photon statistics for this and other open systems by showing that no acceptable family of photon-number operators corresponds to a set of non-power-orthogonal cavity modes.« less

Noise behavior of microwave amplifiers operating under nonlinear conditions

NASA Astrophysics Data System (ADS)

Escotte, L.; Gonneau, E.; Chambon, C.; Graffeuil, J.

2005-12-01

B The noise behavior of microwave amplifiers operating under a large-signal condition has been studied in this paper. A Gaussian noise is added to a microwave signal and they are applied at the input of several amplifying devices. Experimental data show a decrease of the output noise spectral density when the power of the microwave signal at the input of the devices increases due to the compression of the amplifiers. A distortion component due to the interaction of the signal and its harmonics with the noise is also demonstrated from a simplified theoretical model. The statistical properties of the signal and the noise have also been investigated in order to verify the Gaussianity of the noise at the output of the nonlinear circuits. We have also observed that the majority of the measured devices show some variations of their additive noise versus the input power level.

Amplification and noise properties of an erbium-doped multicore fiber amplifier.

PubMed

Abedin, K S; Taunay, T F; Fishteyn, M; Yan, M F; Zhu, B; Fini, J M; Monberg, E M; Dimarcello, F V; Wisk, P W

2011-08-15

A multicore erbium-doped fiber (MC-EDF) amplifier for simultaneous amplification in the 7-cores has been developed, and the gain and noise properties of individual cores have been studied. The pump and signal radiation were coupled to individual cores of MC-EDF using two tapered fiber bundled (TFB) couplers with low insertion loss. For a pump power of 146 mW, the average gain achieved in the MC-EDF fiber was 30 dB, and noise figure was less than 4 dB. The net useful gain from the multicore-amplifier, after taking into consideration of all the passive losses, was about 23-27 dB. Pump induced ASE noise transfer between the neighboring channel was negligible. © 2011 Optical Society of America

Noise characteristics of a plasma relativistic microwave amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strelkov, P. S., E-mail: strelkov@fpl.gpi.ru; Ivanov, I. E.; Shumeiko, D. V.

2016-07-15

Reasons for the occurrence of microwave noise at the output of a plasma relativistic amplifier have been analyzed. It is found that, in the absence of an input signal, the emission spectrum of the plasma relativistic microwave amplifier is similar to that of an electron beam in vacuum. It is concluded that microwave noise at the output of the amplifier appears as a result of amplification of the intrinsic noise of the electron beam. The emission characteristics of a relativistic electron beam formed in a magnetically insulated diode with an explosive emission cathode in vacuum have been studied experimentally formore » the first time. An important point is that, in this case, there is no virtual cathode in the drift space.« less

Design of ultra-low power biopotential amplifiers for biosignal acquisition applications.

PubMed

Zhang, Fan; Holleman, Jeremy; Otis, Brian P

2012-08-01

Rapid development in miniature implantable electronics are expediting advances in neuroscience by allowing observation and control of neural activities. The first stage of an implantable biosignal recording system, a low-noise biopotential amplifier (BPA), is critical to the overall power and noise performance of the system. In order to integrate a large number of front-end amplifiers in multichannel implantable systems, the power consumption of each amplifier must be minimized. This paper introduces a closed-loop complementary-input amplifier, which has a bandwidth of 0.05 Hz to 10.5 kHz, an input-referred noise of 2.2 μ Vrms, and a power dissipation of 12 μW. As a point of comparison, a standard telescopic-cascode closed-loop amplifier with a 0.4 Hz to 8.5 kHz bandwidth, input-referred noise of 3.2 μ Vrms, and power dissipation of 12.5 μW is presented. Also for comparison, we show results from an open-loop complementary-input amplifier that exhibits an input-referred noise of 3.6 μ Vrms while consuming 800 nW of power. The two closed-loop amplifiers are fabricated in a 0.13 μ m CMOS process. The open-loop amplifier is fabricated in a 0.5 μm SOI-BiCMOS process. All three amplifiers operate with a 1 V supply.

Efficient EM Simulation of GCPW Structures Applied to a 200-GHz mHEMT Power Amplifier MMIC

NASA Astrophysics Data System (ADS)

Campos-Roca, Yolanda; Amado-Rey, Belén; Wagner, Sandrine; Leuther, Arnulf; Bangert, Axel; Gómez-Alcalá, Rafael; Tessmann, Axel

2017-05-01

The behaviour of grounded coplanar waveguide (GCPW) structures in the upper millimeter-wave range is analyzed by using full-wave electromagnetic (EM) simulations. A methodological approach to develop reliable and time-efficient simulations is proposed by investigating the impact of different simplifications in the EM modelling and simulation conditions. After experimental validation with measurements on test structures, this approach has been used to model the most critical passive structures involved in the layout of a state-of-the-art 200-GHz power amplifier based on metamorphic high electron mobility transistors (mHEMTs). This millimeter-wave monolithic integrated circuit (MMIC) has demonstrated a measured output power of 8.7 dBm for an input power of 0 dBm at 200 GHz. The measured output power density and power-added efficiency (PAE) are 46.3 mW/mm and 4.5 %, respectively. The peak measured small-signal gain is 12.7 dB (obtained at 196 GHz). A good agreement has been obtained between measurements and simulation results.

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Chattopadhyay, Goutam; Pukala, David; Gaier, Todd; Soria, Mary; ManFung, King; Deal, William; Mei, Gerry; Radisic, Vesna; Lai, Richard

2009-01-01

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).

Development of a low-noise amplifier for neutron detection in harsh environment

NASA Astrophysics Data System (ADS)

Angelone, M.; Cardarelli, R.; Paolozzi, L.; Pillon, M.

2014-10-01

A fast matching charge amplifier for neutron spectroscopy in harsh environment has been developed and tested at the JET Tokamak. This front-end circuit is capable to operate at a distance up to 100 meters from a sensor without increasing its equivalent noise charge. Further improvements are possible by exploiting the intrinsic performance of silicon-germanium bipolar junction transistors.

Low Noise Optical Amplifiers

DTIC Science & Technology

2010-05-01

Karsten Rottwitt DTU Fotonik Department of Photonics Engineering, Technical University of Denmark - 2 - TABLE OF...at DTU Fotonik, has intensified through two new ph.d positions within parametric amplifiers, one partly funded through a research program on phase...Activities: As indicated in the above DTU Fotonik now has significant activities on using parametric processes in optical fibers. This includes

A 2385 MHz, 2-stage low noise amplifier design

NASA Technical Reports Server (NTRS)

Sifri, Jack D.

1986-01-01

This article shows the design aspects of a 2.385 GHz low noise preamplifier with a .7 dB noise figure and 16.5 dB gain using the NE 67383 FET. The design uses a unique method in matching the input which achieves optimum noise figure and unconditional stability.

Relative intensity noise transfer of large-bandwidth pump lasers in Raman fiber amplifiers

NASA Astrophysics Data System (ADS)

Keita, Kafing; Delaye, Philippe; Frey, Robert; Roosen, Gérald

2006-12-01

A theoretical analysis of the Raman amplification in optical fibers and the pump-to-signal relative intensity noise (RIN) transfer has been performed in the spectral domain. An efficient Raman amplification of a monochromatic signal beam by a large-bandwidth pump beam has been demonstrated for a pump bandwidth much smaller than the Raman linewidth. Under the same approximation the pump-to-signal RIN transfer has been calculated in both cases of copropagating and counterpropagating beams in the two limiting cases of modulated monochromatic and smooth-profile large-bandwidth pump beams. At low frequencies the excess of noise evidenced in the case of a modulated monochromatic pump beam did not exist in the case of large-bandwidth pseudoincoherent sources. As this noise reduction can be as large as 13 dB for a 40 dB net gain of the amplifier, such incoherent pumping sources must be considered for the purpose of low-noise Raman amplifiers.

A fast, low power and low noise charge sensitive amplifier ASIC for a UV imaging single photon detector

NASA Astrophysics Data System (ADS)

Seljak, A.; Cumming, H. S.; Varner, G.; Vallerga, J.; Raffanti, R.; Virta, V.

2017-04-01

NASA has funded, through their Strategic Astrophysics Technology (SAT) program, the development of a cross strip (XS) microchannel plate (MCP) detector with the intention to increase its technology readiness level (TRL), enabling prototyping for future NASA missions. One aspect of the development is to convert the large and high powered laboratory Parallel Cross Strip (PXS) readout electronics into application specific integrated circuits (ASICs) to decrease their mass, volume, and power consumption (all limited resources in space) and to make them more robust to the environments of rocket launch and space. The redesign also foresees to increase the overall readout event rate, and decrease the noise contribution of the readout system. This work presents the design and verification of the first stage for the new readout system, the 16 channel charge sensitive amplifier ASIC, called the CSAv3. The single channel amplifier is composed of a charge sensitive amplifier (pre-amplifier), a pole zero cancellation circuit and a shaping amplifier. An additional output stage buffer allows polarity selection of the output analog signal. The operation of the amplifier is programmable via serial bus. It provides an equivalent noise charge (ENC) of around 600 e^- and a baseline gain of 10 mV/fC. The full scale pulse shaped output signal is confined within 100 ns, without long recovery tails, enabling up to 10 MHz periodic event rates without signal pile up. This ASIC was designed and fabricated in 130 nm, TSMC CMOS 1.2 V technology. In addition, we briefly discuss the construction of the readout system and plans for the future work.

Novel design of low noise preamplifier for medical ultrasound transducers.

PubMed

Amer, Mashhour Bani

2011-02-01

A novel design of low noise amplifier for medical ultrasound transducers is described in this paper. Unlike conventional low noise preamplifiers, this design proposes a new circuit configuration which has electronically adjustable matching resistance that allows the preamplifier to be compatible with a variety of medical ultrasound transducers. The design employs current feedback operational amplifier to enhance the gain-bandwidth independence and improve the design slew rate. Simulation results show that the proposed design has very low output noise voltage spectral density and the level of this noise does not increase when its tunable matching resistance is increased or decreased.

Digital Lock-In Detector for Ultra-Low Level Noise Spectrum Analysis

DTIC Science & Technology

1988-08-01

Noise measurements,’ digital lockAn detector; 1 / f noise ; P...lower than the internal amplifier noise . Especially at low frequencies, amplifier noises become overwhelming, due to the 1 / f noise generated by the...shows the set-up. vm is the modulating signal generated by the computer. The two lOOk’s are metal film resistors, whose 1 / f noise is negligible. Ri’s

Origin of 1/f PM and AM noise in bipolar junction transistor amplifiers.

PubMed

Walls, F L; Ferre-Pikal, E S; Jefferts, S R

1997-01-01

In this paper we report the results of extensive research on phase modulation (PM) and amplitude modulation (AM) noise in linear bipolar junction transistor (BJT) amplifiers. BJT amplifiers exhibit 1/f PM and AM noise about a carrier signal that is much larger than the amplifiers thermal noise at those frequencies in the absence of the carrier signal. Our work shows that the 1/f PM noise of a BJT based amplifier is accompanied by 1/f AM noise which can be higher, lower, or nearly equal, depending on the circuit implementation. The 1/f AM and PM noise in BJTs is primarily the result of 1/f fluctuations in transistor current, transistor capacitance, circuit supply voltages, circuit impedances, and circuit configuration. We discuss the theory and present experimental data in reference to common emitter amplifiers, but the analysis can be applied to other configurations as well. This study provides the functional dependence of 1/f AM and PM noise on transistor parameters, circuit parameters, and signal frequency, thereby laying the groundwork for a comprehensive theory of 1/f AM and PM noise in BJT amplifiers. We show that in many cases the 1/f PM and AM noise can be reduced below the thermal noise of the amplifier.

Highly Efficient Amplifier for Ka-Band Communications

NASA Technical Reports Server (NTRS)

1996-01-01

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power

A 1-W, 30-ghz, CPW Amplifier for ACTS Small Terminal Uplink

NASA Technical Reports Server (NTRS)

Taub, Susan R.; Simons, Rainee N.

1992-01-01

The progress is described of the development of a 1 W, 30 GHz, coplanar waveguide (CPW) amplifier for the Advanced Communication Technology Satellite (ACTS)Small Terminal Uplink. The amplifier is based on Texas Instruments' monolithic microwave integrated circuit (MMIC) amplifiers; a three stage, low power amplifier, and a single stage, high power amplifier. The amplifiers have a power output of 190 mW and 0.710 W, gain of 23 and 4.2 dB, and efficiencies of 30.2 and 24 percent for the three stage and one stage amplifiers, respectively. The chips are to be combined via a CPW power divider/combiner circuit to yield the desired 1 W of output power.

Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

1985-01-01

Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

MMIC technology for advanced space communications systems

NASA Astrophysics Data System (ADS)

Downey, A. N.; Connolly, D. J.; Anzic, G.

The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected.

MMIC technology for advanced space communications systems

NASA Technical Reports Server (NTRS)

Downey, A. N.; Connolly, D. J.; Anzic, G.

1984-01-01

The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected.

Matching technique yields optimum LNA performance. [Low Noise Amplifiers

NASA Technical Reports Server (NTRS)

Sifri, J. D.

1986-01-01

The present article is concerned with a case in which an optimum noise figure and unconditional stability have been designed into a 2.385-GHz low-noise preamplifier via an unusual method for matching the input with a suspended line. The results obtained with several conventional line-matching techniques were not satisfactory. Attention is given to the minimization of thermal noise, the design procedure, requirements for a high-impedance line, a sampling of four matching networks, the noise figure of the single-line matching network as a function of frequency, and the approaches used to achieve unconditional stability.

Single-Pole Double-Throw MMIC Switches for a Microwave Radiometer

NASA Technical Reports Server (NTRS)

Montes, Oliver; Dawson, Douglas E.; Kangaslahti, Pekka P.

2012-01-01

In order to reduce the effect of gain and noise instabilities in the RF chain of a microwave radiometer, a Dicke radiometer topology is often used, as in the case of the proposed surface water and ocean topography (SWOT) radiometer instrument. For this topology, a single-pole double-throw (SPDT) microwave switch is needed, which must have low insertion loss at the radiometer channel frequencies to minimize the overall receiver noise figure. Total power radiometers are limited in accuracy due to the continuous variation in gain of the receiver. High-frequency SPDT switches were developed in the form of monolithic microwave integrated circuits (MMICs) using 75 micron indium phosphide (InP) PIN-diode technology. These switches can be easily integrated into Dicke switched radiometers that utilize microstrip technology.

A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.

PubMed

Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting

2013-04-01

In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats.

Low-cost 20-22 GHz MIC active receiver/radiometer

NASA Technical Reports Server (NTRS)

Mollenkopf, Steven; Katehi, Linda P. B.; Rebeiz, Gabriel M.

1995-01-01

A microwave integrated circuit active receiver is built and tested at 19-25 GHz. The receiver consists of a planar CPW-fed double folded-slot antenna coupled to a six-stage MESFET (metal semiconductor field effect transistors) amplifier and followed by a planar Schottky-diode detector. The folded-slot antenna on a GaAs half-space results in a wide frequency bandwidth suitable for MMIC amplifiers. The measured system performance show a video responsivity close to 1 GV/W at 20 GHz with a 3-dB bandwidth of 1500 MHz. A novel method which uses the planar video detector after the amplifier stages as an RF (radio frequency) mixer is used to measure the noise-figure of the direct detection radiometer. The system noise figure is 4.8 dB at 22 GHz. The radiometer sensitivity to a hot/cold load is 3.8 mu V/K. The measured antenna patterns show a 90% Gaussicity at 20-22 GHz. The active MIC receiver can be integrated monolithically for low-cost applications and is well suited for millimeter-wave linear imaging arrays.

Gain and noise figure enhancement of Er+3/Yb+3 co-doped fiber/Raman hybrid amplifier

NASA Astrophysics Data System (ADS)

Mahran, O.

2016-02-01

An Er/Yb co-doped fiber/Raman hybrid amplifier (HA) is proposed and studied theoretically and analytically to improve the gain and noise figure of optical amplifiers. The calculations are performed under a uniform dopant and steady-state conditions. The initial energy transfer efficiency for Er/Yb co-doped fiber amplifier (EYDFA) is introduced, while the amplified spontaneous emission (ASE) is neglected. The glass fiber used for both Er/Yb and Raman amplifiers is phosphate. Different pump powers are used for both EYDFA and RA with 1 μW input signal power, 1 m length of Er/Yb amplifier and 25 km length of Raman amplifier (RA). The proposed model is validated for Er/Yb co-doped amplifier and Raman amplifier separately by comparing the calculating results with the experimental data. A high gain and low noise figure at 200 mW Raman pump power and 500 mW Er/Yb pump power are obtained for the proposed HA as compared with the experimental results of EYDFA, Raman amplifier and the EDFA/Raman hybrid amplifier.

S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT

NASA Astrophysics Data System (ADS)

Hamaizia, Z.; Sengouga, N.; Yagoub, M. C. E.; Missous, M.

2012-02-01

This paper discusses the design of a wideband low noise amplifier (LNA) in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applications. The LNA design is based on a novel ultra-low noise InGaAs/InAlAs/InP pHEMT Linear and non-linear modelling of this pHEMT has been used to design an LNA operating from 2 to 4 GHz. A common-drain in cascade with a common source inductive degeneration, broadband LNA topology is proposed for wideband applications. The proposed configuration achieved a maximum gain of 27 dB and a noise figure of 0.3 dB with a good input and output return loss (S11 < -10 dB, S22 < -11 dB). This LNA exhibits an input 1-dB compression point of -18 dBm, a third order input intercept point of 0 dBm and consumes 85 mW of power from a 1.8 V supply.

NASA Tech Briefs, December 2010

NASA Technical Reports Server (NTRS)

2010-01-01

Topics include: Coherent Frequency Reference System for the NASA Deep Space Network; Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers; 180-GHz I-Q Second Harmonic Resistive Mixer MMIC; Ultra-Low-Noise W-Band MMIC Detector Modules; 338-GHz Semiconductor Amplifier Module; Power Amplifier Module with 734-mW Continuous Wave Output Power; Multiple Differential-Amplifier MMICs Embedded in Waveguides; Rapid Corner Detection Using FPGAs; Special Component Designs for Differential-Amplifier MMICs; Multi-Stage System for Automatic Target Recognition; Single-Receiver GPS Phase Bias Resolution; Ultra-Wideband Angle-of-Arrival Tracking Systems; Update on Waveguide-Embedded Differential MMIC Amplifiers; Automation Framework for Flight Dynamics Products Generation; Product Operations Status Summary Metrics; Mars Terrain Generation; Application-Controlled Parallel Asynchronous Input/Output Utility; Planetary Image Geometry Library; Propulsion Design With Freeform Fabrication (PDFF); Economical Fabrication of Thick-Section Ceramic Matrix Composites; Process for Making a Noble Metal on Tin Oxide Catalyst; Stacked Corrugated Horn Rings; Refinements in an Mg/MgH2/H2O-Based Hydrogen Generator; Continuous/Batch Mg/MgH2/H2O-Based Hydrogen Generator; Strain System for the Motion Base Shuttle Mission Simulator; Ko Displacement Theory for Structural Shape Predictions; Pyrotechnic Actuator for Retracting Tubes Between MSL Subsystems; Surface-Enhanced X-Ray Fluorescence; Infrared Sensor on Unmanned Aircraft Transmits Time-Critical Wildfire Data; and Slopes To Prevent Trapping of Bubbles in Microfluidic Channels.

Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

NASA Technical Reports Server (NTRS)

Chen, C.-C.

1989-01-01

The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate

NASA Technical Reports Server (NTRS)

Deal, W. R.; Din, S.; Padilla, J.; Radisic, V.; Mei, G.; Yoshida, W.; Liu, P. S.; Uyeda, J.; Barsky, M.; Gaier, T.;

In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers.

PubMed

Cochems, P; Kirk, A; Zimmermann, S

2014-12-01

Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.

Noise-figure limit of fiber-optical parametric amplifiers and wavelength converters: experimental investigation

NASA Astrophysics Data System (ADS)

Tang, Renyong; Voss, Paul L.; Lasri, Jacob; Devgan, Preetpaul; Kumar, Prem

2004-10-01

Recent theoretical work predicts that the quantum-limited noise figure of a chi(3)-based fiber-optical parametric amplifier operating as a phase-insensitive in-line amplifier or as a wavelength converter exceeds the standard 3-dB limit at high gain. The degradation of the noise figure is caused by the excess noise added by the unavoidable Raman gain and loss occurring at the signal and the converted wavelengths. We present detailed experimental evidence in support of this theory through measurements of the gain and noise-figure spectra for phase-insensitive parametric amplification and wavelength conversion in a continuous-wave amplifier made from 4.4 km of dispersion-shifted fiber. The theory is also extended to include the effect of distributed linear loss on the noise figure of such a long-length parametric amplifier and wavelength converter.

Dedicated power supply subsystem for ultra-low noise preamplifiers and biophotonic sensors

NASA Astrophysics Data System (ADS)

SuraŻyński, Łukasz; Wierzba, Paweł; Zienkiewicz, Aleksandra

2013-11-01

It is very common for noise to have an influence on analog circuits. In order to preserve the quality of measurements taken by specific sensors and any noise dependent amplifiers which are correlated to them, all of these devices must be powered by low-noise power supplies. Therefore a necessity exists to develop new ultra-low noise power supplies which can cooperate with specified amplifiers and preamplifiers. Many well-known power supplies are particularly expensive and yet still have their disadvantages. This paper proposes a simple and inexpensive solution, which fulfills a specific criteria and can be treated as a base for improvement.

Ultra-low-noise preamplifier for condenser microphones.

PubMed

Starecki, Tomasz

2010-12-01

The paper presents the design of a low-noise preamplifier dedicated for condenser measurement microphones used in high sensitivity applications, in which amplifier noise is the main factor limiting sensitivity of the measurements. In measurement microphone preamplifiers, the dominant source of noise at lower frequencies is the bias resistance of the input stage. In the presented solution, resistors were connected to the input stage by means of switches. The switches are opened during measurements, which disconnects the resistors from the input stage and results in noise reduction. Closing the switches allows for fast charging of the microphone capacitance. At low frequencies the noise of the designed preamplifier is a few times lower in comparison to similar, commercially available instruments.

A Low-Voltage Chopper-Stabilized Amplifier for Fetal ECG Monitoring With a 1.41 Power Efficiency Factor.

PubMed

Song, Shuang; Rooijakkers, Michael; Harpe, Pieter; Rabotti, Chiara; Mischi, Massimo; van Roermund, Arthur H M; Cantatore, Eugenio

2015-04-01

This paper presents a low-voltage current-reuse chopper-stabilized frontend amplifier for fetal ECG monitoring. The proposed amplifier allows for individual tuning of the noise in each measurement channel, minimizing the total power consumption while satisfying all application requirements. The low-voltage current reuse topology exploits power optimization in both the current and the voltage domain, exploiting multiple supply voltages (0.3, 0.6 and 1.2 V). The power management circuitry providing the different supplies is optimized for high efficiency (peak charge-pump efficiency = 90%).The low-voltage amplifier together with its power management circuitry is implemented in a standard 0.18 μm CMOS process and characterized experimentally. The amplifier core achieves both good noise efficiency factor (NEF=1.74) and power efficiency factor (PEF=1.05). Experiments show that the amplifier core can provide a noise level of 0.34 μVrms in a 0.7 to 182 Hz band, consuming 1.17 μW power. The amplifier together with its power management circuitry consumes 1.56 μW, achieving a PEF of 1.41. The amplifier is also validated with adult ECG and pre-recorded fetal ECG measurements.

Noise spectra in balanced optical detectors based on transimpedance amplifiers.

PubMed

Masalov, A V; Kuzhamuratov, A; Lvovsky, A I

2017-11-01

We present a thorough theoretical analysis and experimental study of the shot and electronic noise spectra of a balanced optical detector based on an operational amplifier connected in a transimpedance scheme. We identify and quantify the primary parameters responsible for the limitations of the circuit, in particular, the bandwidth and shot-to-electronic noise clearance. We find that the shot noise spectrum can be made consistent with the second-order Butterworth filter, while the electronic noise grows linearly with the second power of the frequency. Good agreement between the theory and experiment is observed; however, the capacitances of the operational amplifier input and the photodiodes appear significantly higher than those specified in manufacturers' datasheets. This observation is confirmed by independent tests.

Noise spectra in balanced optical detectors based on transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Masalov, A. V.; Kuzhamuratov, A.; Lvovsky, A. I.

2017-11-01

We present a thorough theoretical analysis and experimental study of the shot and electronic noise spectra of a balanced optical detector based on an operational amplifier connected in a transimpedance scheme. We identify and quantify the primary parameters responsible for the limitations of the circuit, in particular, the bandwidth and shot-to-electronic noise clearance. We find that the shot noise spectrum can be made consistent with the second-order Butterworth filter, while the electronic noise grows linearly with the second power of the frequency. Good agreement between the theory and experiment is observed; however, the capacitances of the operational amplifier input and the photodiodes appear significantly higher than those specified in manufacturers' datasheets. This observation is confirmed by independent tests.

Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices

NASA Astrophysics Data System (ADS)

Becerra-Alvarez, Edwin C.; Sandoval-Ibarra, Federico; de la Rosa, José M.

2009-05-01

This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF<2.8dB, S21>13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band.

NASA Tech Briefs, October 2009

NASA Technical Reports Server (NTRS)

2009-01-01

Topics covered include: Light-Driven Polymeric Bimorph Actuators; Guaranteeing Failsafe Operation of Extended-Scene Shack-Hartmann Wavefront Sensor Algorithm; Cloud Water Content Sensor for Sounding Balloons and Small UAVs; Pixelized Device Control Actuators for Large Adaptive Optics; T-Slide Linear Actuators; G4FET Implementations of Some Logic Circuits; Electrically Variable or Programmable Nonvolatile Capacitors; System for Automated Calibration of Vector Modulators; Complementary Paired G4FETs as Voltage-Controlled NDR Device; Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band; Low-Noise MMIC Amplifiers for 120 to 180 GHz; Using Ozone To Clean and Passivate Oxygen-Handling Hardware; Metal Standards for Waveguide Characterization of Materials; Two-Piece Screens for Decontaminating Granular Material; Mercuric Iodide Anticoincidence Shield for Gamma-Ray Spectrometer; Improved Method of Design for Folding Inflatable Shells; Ultra-Large Solar Sail; Cooperative Three-Robot System for Traversing Steep Slopes; Assemblies of Conformal Tanks; Microfluidic Pumps Containing Teflon[Trademark] AF Diaphragms; Transparent Conveyor of Dielectric Liquids or Particles; Multi-Cone Model for Estimating GPS Ionospheric Delays; High-Sensitivity GaN Microchemical Sensors; On the Divergence of the Velocity Vector in Real-Gas Flow; Progress Toward a Compact, Highly Stable Ion Clock; Instruments for Imaging from Far to Near; Reflectors Made from Membranes Stretched Between Beams; Integrated Risk and Knowledge Management Program -- IRKM-P; LDPC Codes with Minimum Distance Proportional to Block Size; Constructing LDPC Codes from Loop-Free Encoding Modules; MMICs with Radial Probe Transitions to Waveguides; Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz; and Extending Newtonian Dynamics to Include Stochastic Processes.

Simultaneous monitoring technique for ASE and MPI noises in distributed Raman Amplified Systems.

PubMed

Choi, H Y; Jun, S B; Shin, S K; Chung, Y C

2007-07-09

We develop a new technique for simultaneously monitoring the amplified spontaneous emission (ASE) and multi-path interference (MPI) noises in distributed Raman amplified (DRA) systems. This technique utilizes the facts that the degree-of polarization (DOP) of the MPI noise is 1/9, while the ASE noise is unpolarized. The results show that the proposed technique can accurately monitor both of these noises regardless of the bit rates, modulation formats, and optical signal-to-noise ratio (OSNR) levels of the signals.

Note: Broadband low-noise photodetector for Pound-Drever-Hall laser stabilization

NASA Astrophysics Data System (ADS)

Potnis, Shreyas; Vutha, Amar C.

2016-07-01

The Pound-Drever-Hall laser stabilization technique requires a fast, low-noise photodetector. We present a simple photodetector design that uses a transformer as an intermediary between a photodiode and cascaded low-noise radio-frequency amplifiers. Our implementation using a silicon photodiode yields a detector with 50 MHz bandwidth, gain >105 V/A, and input current noise <4 pA/ √{ Hz } , allowing us to obtain shot-noise-limited performance with low optical power.

A very low noise, high accuracy, programmable voltage source for low frequency noise measurements

NASA Astrophysics Data System (ADS)

Scandurra, Graziella; Giusi, Gino; Ciofi, Carmine

2014-04-01

In this paper an approach for designing a programmable, very low noise, high accuracy voltage source for biasing devices under test in low frequency noise measurements is proposed. The core of the system is a supercapacitor based two pole low pass filter used for filtering out the noise produced by a standard DA converter down to 100 mHz with an attenuation in excess of 40 dB. The high leakage current of the supercapacitors, however, introduces large DC errors that need to be compensated in order to obtain high accuracy as well as very low output noise. To this end, a proper circuit topology has been developed that allows to considerably reduce the effect of the supercapacitor leakage current on the DC response of the system while maintaining a very low level of output noise. With a proper design an output noise as low as the equivalent input voltage noise of the OP27 operational amplifier, used as the output buffer of the system, can be obtained with DC accuracies better that 0.05% up to the maximum output of 8 V. The expected performances of the proposed voltage source have been confirmed both by means of SPICE simulations and by means of measurements on actual prototypes. Turn on and stabilization times for the system are of the order of a few hundred seconds. These times are fully compatible with noise measurements down to 100 mHz, since measurement times of the order of several tens of minutes are required in any case in order to reduce the statistical error in the measured spectra down to an acceptable level.

A very low noise, high accuracy, programmable voltage source for low frequency noise measurements.

PubMed

Scandurra, Graziella; Giusi, Gino; Ciofi, Carmine

2014-04-01

In this paper an approach for designing a programmable, very low noise, high accuracy voltage source for biasing devices under test in low frequency noise measurements is proposed. The core of the system is a supercapacitor based two pole low pass filter used for filtering out the noise produced by a standard DA converter down to 100 mHz with an attenuation in excess of 40 dB. The high leakage current of the supercapacitors, however, introduces large DC errors that need to be compensated in order to obtain high accuracy as well as very low output noise. To this end, a proper circuit topology has been developed that allows to considerably reduce the effect of the supercapacitor leakage current on the DC response of the system while maintaining a very low level of output noise. With a proper design an output noise as low as the equivalent input voltage noise of the OP27 operational amplifier, used as the output buffer of the system, can be obtained with DC accuracies better that 0.05% up to the maximum output of 8 V. The expected performances of the proposed voltage source have been confirmed both by means of SPICE simulations and by means of measurements on actual prototypes. Turn on and stabilization times for the system are of the order of a few hundred seconds. These times are fully compatible with noise measurements down to 100 mHz, since measurement times of the order of several tens of minutes are required in any case in order to reduce the statistical error in the measured spectra down to an acceptable level.

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

NASA Technical Reports Server (NTRS)

Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

2009-01-01

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Development of an ultra low noise, miniature signal conditioning device for vestibular evoked response recordings

PubMed Central

2014-01-01

Background Inner ear evoked potentials are small amplitude (<1 μVpk) signals that require a low noise signal acquisition protocol for successful extraction; an existing such technique is Electrocochleography (ECOG). A novel variant of ECOG called Electrovestibulography (EVestG) is currently investigated by our group, which captures vestibular responses to a whole body tilt. The objective is to design and implement a bio-signal amplifier optimized for ECOG and EVestG, which will be superior in noise performance compared to low noise, general purpose devices available commercially. Method A high gain configuration is required (>85 dB) for such small signal recordings; thus, background power line interference (PLI) can have adverse effects. Active electrode shielding and driven-right-leg circuitry optimized for EVestG/ECOG recordings were investigated for PLI suppression. A parallel pre-amplifier design approach was investigated to realize low voltage, and current noise figures for the bio-signal amplifier. Results In comparison to the currently used device, PLI is significantly suppressed by the designed prototype (by >20 dB in specific test scenarios), and the prototype amplifier generated noise was measured to be 4.8 nV/Hz @ 1 kHz (0.45 μVRMS with bandwidth 10 Hz-10 kHz), which is lower than the currently used device generated noise of 7.8 nV/Hz @ 1 kHz (0.76 μVRMS). A low noise (<1 nV/Hz) radio frequency interference filter was realized to minimize noise contribution from the pre-amplifier, while maintaining the required bandwidth in high impedance measurements. Validation of the prototype device was conducted for actual ECOG recordings on humans that showed an increase (p < 0.05) of ~5 dB in Signal-to-Noise ratio (SNR), and for EVestG recordings using a synthetic ear model that showed a ~4% improvement (p < 0.01) over the currently used amplifier. Conclusion This paper presents the design and evaluation of an ultra-low noise and miniaturized bio

Measurement of the photon statistics and the noise figure of a fiber-optic parametric amplifier.

PubMed

Voss, Paul L; Tang, Renyong; Kumar, Prem

2003-04-01

We report measurement of the noise statistics of spontaneous parametric fluorescence in a fiber parametric amplifier with single-mode, single-photon resolution. We employ optical homodyne tomography for this purpose, which also provides a self-calibrating measurement of the noise figure of the amplifier. The measured photon statistics agree with quantum-mechanical predictions, and the amplifier's noise figure is found to be almost quantum limited.

Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Bryerton, Eric; Pukala, David; Peralta, Alejandro; Hu, Ming; Schmitz, Adele

2005-01-01

This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

Measurement of spectral phase noise in a cryogenically cooled Ti:Sa amplifier (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nagymihaly, Roland S.; Jójárt, Péter; Börzsönyi, Ádám.; Osvay, Károly

2017-05-01

In most of cases the drift of the carrier envelope phase (CEP) of a chirped pulse amplifier (CPA) system is determined only [1], being the relevant parameter at laser-matter interactions. The need of coherent combination of multiple amplifier channels to further increase the peak power of pulses requires interferometric precision [2]. For this purpose, the stability of the group delay of the pulses may become equally important. Further development of amplifier systems requires the investigation of phase noise contributions of individual subsystems, like amplifier stages. Spectrally resolved interferometry (SRI), which is a completely linear optical method, makes the measurement of spectral phase noise possible of basically any part of a laser system [3]. By utilizing this method, the CEP stability of water-cooled Ti:Sa based amplifiers was investigated just recently, where the effects of seed and pump energy, repetition rate, and the cooling crystal mounts were thoroughly measured [4]. We present a systematic investigation on the noise of the spectral phase, including CEP, of laser pulses amplified in a cryogenically-cooled Ti:Sa amplifier of a CPA chain. The double-pass amplifier was built in the sample arm of a compact Michelson interferometer. The Ti:Sa crystal was cooled below 30 °K. The inherent phase noise was measured for different operation modes, as at various repetition rates, and pump depletion. Noise contributions of the vacuum pumps and the cryogenic refrigerator were found to be 43 and 47 mrad, respectively. We have also identified CEP noise having thermal as well as mechanical origin. Both showed a monotonically decreasing tendency towards higher repetition rates. We found that the widths of the noise distributions are getting broader towards lower repetition rates. Spectral phase noise with and without amplification was measured, and we found no significant difference in the phase noise distributions. The mechanical vibration was also measured in

Photon statistics of shot noise measured using a Josephson parametric amplifier

NASA Astrophysics Data System (ADS)

Simoneau, Jean Olivier; Virally, Stéphane; Lupien, Christian; Reulet, Bertrand

2015-03-01

Quantum measurements are very sensitive to external noise sources. Such measurements require careful amplification chain design so as not to overwhelm the signal with extraneous noise. A quantum-limited amplifier, like the Josephson parametric amplifier (paramp), is thus an ideal candidate for this purpose. We used a paramp to investigate the quantum noise of a tunnel junction. This measurement scheme allowed us to improve upon previous observations of shot noise by an order of magnitude in terms of noise temperature. With this setup, we have measured the second and fourth cumulants of current fluctuations generated by the tunnel junction within a 40 MHz bandwidth around 6 GHz. From theses measurements, we deduce the variance of the photon number fluctuations for various bias schemes of the junction. In particular, we investigate the regime where the junction emits pairs of photons.

Simulation and evaluation of phase noise for optical amplification using semiconductor optical amplifiers in DPSK applications

NASA Astrophysics Data System (ADS)

Hong, Wei; Huang, Dexiu; Zhang, Xinliang; Zhu, Guangxi

2008-01-01

A thorough simulation and evaluation of phase noise for optical amplification using semiconductor optical amplifier (SOA) is very important for predicting its performance in differential phase-shift keyed (DPSK) applications. In this paper, standard deviation and probability distribution of differential phase noise at the SOA output are obtained from the statistics of simulated differential phase noise. By using a full-wave model of SOA, the noise performance in the entire operation range can be investigated. It is shown that nonlinear phase noise substantially contributes to the total phase noise in case of a noisy signal amplified by a saturated SOA and the nonlinear contribution is larger with shorter SOA carrier lifetime. It is also shown that Gaussian distribution can be useful as a good approximation of the total differential phase noise statistics in the whole operation range. Power penalty due to differential phase noise is evaluated using a semi-analytical probability density function (PDF) of receiver noise. Obvious increase of power penalty at high signal input powers can be found for low input OSNR, which is due to both the large nonlinear differential phase noise and the dependence of BER vs. receiving power curvature on differential phase noise standard deviation.

4 Kelvin Cryogenic Characterization of Commercial pHEMT Transistors at 9 kHz to 8.5 GHz Range

NASA Astrophysics Data System (ADS)

Ibarra-Medel, E.; Velázquez, M.; Ventura, S.; Ferrusca, D.; Gómez-Rivera, V.

2016-07-01

Nowadays, the technology innovations in large format array detectors at low temperature for millimetric observational astronomy demand the development of electronics capable to keep their functionality at cryogenic temperatures. In kinetic inductance detectors, the first stage of electronics readout requires high-bandwidth low-noise amplifiers (LNAs). These devices are commonly fabricated in monolithic microwave integrated circuit (MMIC) processes which commercially achieve a noise temperature level of 5 K. An alternative approach to the MMIC are the hybrid microwave circuit which mixes RF lumped elements and discrete electronic components. This paper describes the characterization of six commercial pHEMT transistors tested at cryogenic temperatures. DC properties such as I-V curves and transconductance (g_m) were measured for each transistor; these measurements allow us to calculate the best bias point versus gain, with the lowest noise figure and power consumption within the range of 9 kHz to 8.5 GHz at the operating temperature of 4 K. Experimental results suggest that the characterized pHEMTs have a noise figure that allow them to be used in hybrid LNAs arranges with a comparable MMIC performance.

High-efficiency solid state power amplifier

NASA Technical Reports Server (NTRS)

Wallis, Robert E. (Inventor); Cheng, Sheng (Inventor)

2005-01-01

A high-efficiency solid state power amplifier (SSPA) for specific use in a spacecraft is provided. The SSPA has a mass of less than 850 g and includes two different X-band power amplifier sections, i.e., a lumped power amplifier with a single 11-W output and a distributed power amplifier with eight 2.75-W outputs. These two amplifier sections provide output power that is scalable from 11 to 15 watts without major design changes. Five different hybrid microcircuits, including high-efficiency Heterostructure Field Effect Transistor (HFET) amplifiers and Monolithic Microwave Integrated Circuit (MMIC) phase shifters have been developed for use within the SSPA. A highly efficient packaging approach enables the integration of a large number of hybrid circuits into the SSPA.

The 30 GHz communications satellite low noise receiver

NASA Technical Reports Server (NTRS)

Steffek, L. J.; Smith, D. W.

1983-01-01

A Ka-band low noise front end in proof of concept (POC) model form for ultimate spaceborne communications receiver deployment was developed. The low noise receiver consists of a 27.5 to 30.0 GHz image enhanced mixer integrated with a 3.7 to 6.2 GHz FET low noise IF amplifier and driven by a self contained 23.8 GHz phase locked local oscillator source. The measured level of receiver performance over the 27.3 to 30.0 GHz RF/3.7 to 6.2 GHz IF band includes 5.5 to 6.5 dB (typ) SSB noise figure, 20.5 + or - 1.5 dB conversion gain and +23 dBm minimum third order two tone intermodulation output intercept point.

Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

NASA Astrophysics Data System (ADS)

Bickman, S.; DeMille, D.

2005-11-01

Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28mm×28mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3pW/√Hz , can recover from a large scattered light pulse within 10μs, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08pW/√Hz , also can recover from a large scattered light pulse within 10μs, and has a bandwidth of 1 MHz.

An Extremely Wide Bandwidth, Low-Noise SIS Heterodyne Receiver Design for Millimeter and Submillimeter Observations

NASA Technical Reports Server (NTRS)

Sumner, Matthew; Blain, Andrew; Harris, Andrew; Hu, Robert; Rice, Frank; LeDuc, H. G.; Weinreb, Sander; Zmuidzinas, Jonas

2002-01-01

Millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We present the design for a broadband, sensitive, heterodyne spectrometer under development for the Caltech Submillimeter Observatory (CSO). The 180-300 GHz double-sideband design uses a single SIS device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss should be no more than 1-2 dB with mixer noise temperatures across the band within 10 K of the quantum limit. The single-sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and the first use on the CSO should occur in the spring of 2003.

Intensity and temporal noise characteristics in femtosecond optical parametric amplifiers.

PubMed

Chen, Wei; Fan, Jintao; Ge, Aichen; Song, Huanyu; Song, Youjian; Liu, Bowen; Chai, Lu; Wang, Chingyue; Hu, Minglie

2017-12-11

We characterize the relative intensity noise (RIN) and relative timing jitter (RTJ) between the signal and pump pulses of optical parametric amplifiers (OPAs) seeded by three different seed sources. Compared to a white-light continuum (WLC) seeded- and an optical parametric generator (OPG) seeded OPA, the narrowband CW seeded OPA exhibits the lowest root-mean-square (RMS) RIN and RTJ of 0.79% and 0.32 fs, respectively, integrated from 1 kHz to the Nyquist frequency of 1.25 MHz. An improved numerical model based on a forward Maxwell equation (FME) is built to investigate the transfers of the pump and seed's noise to the resulting OPAs' intensity and temporal fluctuation. Both the experimental and numerical study indicate that the low level of noise from the narrowband CW seeded OPA is attributed to the elimination of the RIN and RTJ coupled from the noise of seed source, being one of the important contributions to RIN and timing jitter in the other two OPAs. The approach to achieve lower level of noise from this CW seeded OPA by driving it close to saturation is also discussed with the same numerical model.

An Extremely Wide Bandwidth, Low Noise SIS Heterodyne Receiver Design for Millimeter and Submillimeter Observations

NASA Technical Reports Server (NTRS)

Zmuidzinas, J.

2004-01-01

Our group has designed a heterodyne submillimeter receiver that offers a very wide IF bandwidth of 12 GHz, while still maintaining a low noise temperature. The 180-300 GHz double-sideband design uses a single SI5 device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz. providing an instantaneous RF bandwidth of 24 GHz (double-sideband). Intensive simulations predict that the junction will achieve a conversion loss better than 1-2 dB and a mixer noise temperature of less than 20 K across the band (twice the quantum limit). The single sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical and environmental observations beyond the capabilities of current instruments. Lab testing of the receiver will begin this summer, and first light on the CSO should be in the Spring of 2003. At the CSO, we plan to use receiver with WASP2, a wideband spectrometer, to search for spectral lines from SCUBA sources. This approach should allow us to rapidly develop a catalog of redshifts for these objects.

The potential impact of MMICs on future satellite communications

NASA Technical Reports Server (NTRS)

Dunn, Vernon E.

1988-01-01

This is the Final Report representing the results of a 17-month study on the future trends and requirements of Monolithic Microwave Integrated Circuits (MMIC) for space communication applications. Specifically this report identifies potential space communication applications of MMICs, assesses the impact of MMIC on the classes of systems that were identified, determines the present status and probable 10-year growth in capability of required MMIC and competing technologies, identifies the applications most likely to benefit from further MMIC development and presents recommendations for NASA development activities to address the needs of these applications.

Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bickman, S.; DeMille, D.

2005-11-15

Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28 mmx28 mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3 pW/{radical}(Hz), can recover from a large scattered light pulse within 10 {mu}s, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08 pW/{radical}(Hz), also can recover from a large scattered light pulse within 10 {mu}s, andmore » has a bandwidth of 1 MHz.« less

A Ka-Band Wide-Bandgap Solid-State Power Amplifier: Architecture Performance Estimates

NASA Technical Reports Server (NTRS)

Epp, L.; Khan, P.; Silva, A.

2005-01-01

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss <0.02 dB, and isolation >30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss <0.23 dB, and adjacent port isolation >20 dB over the design band. All

SQUID amplifiers for axion search experiments

NASA Astrophysics Data System (ADS)

Matlashov, Andrei; Schmelz, Matthias; Zakosarenko, Vyacheslav; Stolz, Ronny; Semertzidis, Yannis K.

2018-04-01

In the experiments for dark-matter QCD-axion searches, very weak microwave signals from a low-temperature High-Q resonant cavity should be detected using the highest sensitivity. The best commercial low-noise cryogenic semiconductor amplifiers based on high electron mobility transistors have a lowest noise temperature above 1.0 K, even if they are cooled well below 1 K. Superconducting quantum interference devices can work as microwave amplifiers with temperature noise close to the standard quantum limit. Previous SQUID-based RF amplifiers designed for axion search experiments have a microstrip resonant input coil and are thus called micro-strip SQUID amplifiers or MSAs. Due to the resonant input coupling they usually have narrow bandwidth. In this paper we report on a SQUID-based wideband microwave amplifier fabricated using sub-micron size Josephson junctions with very low capacitance. A single amplifier can be used in a frequency range of approximately 1-5 GHz.

Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers

DOEpatents

DeGeronimo, Gianluigi

2006-02-14

A charge amplifier includes an amplifier, feedback circuit, and cancellation circuit. The feedback circuit includes a capacitor, inverter, and current mirror. The capacitor is coupled across the signal amplifier, the inverter is coupled to the output of the signal amplifier, and the current mirror is coupled to the input of the signal amplifier. The cancellation circuit is coupled to the output of the signal amplifier. A method of charge amplification includes providing a signal amplifier; coupling a first capacitor across the signal amplifier; coupling an inverter to the output of the signal amplifier; coupling a current mirror to the input of the signal amplifier; and coupling a cancellation circuit to the output of the signal amplifier. A front-end system for use with radiation sensors includes a charge amplifier and a current amplifier, shaping amplifier, baseline stabilizer, discriminator, peak detector, timing detector, and logic circuit coupled to the charge amplifier.

FM notch filter in front - and - behind the low noise amplifier of a Callisto Radio Spectrometer in Gauribidanur, India

NASA Astrophysics Data System (ADS)

Monstein, C.

2014-03-01

In the framework of IHY2007 a Callisto spectrometer [Benz(2004)] was installed and set into operation at the location of the solar heliograph in Gauribidanur, India. At that time the level of radio frequency interference (RFI) was amazingly low. In recent years more and more FM broadcast transmitters were installed with high power compared to the requirements of radio astronomical observations. So, the spectral observations with Callisto experienced more and more interference by these FM transmitters. Recently an FM-notch filter was installed between the low noise amplifier and Callisto, but it did not work out. The notch filter was then moved to the input of the LNA and the result was much better, as expected from theoretical concepts.

Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

DOEpatents

McQuaid, James H.; Lavietes, Anthony D.

1998-05-29

A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radio nuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components.

Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

DOEpatents

McQuaid, J.H.; Lavietes, A.D.

1998-05-26

A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector is disclosed. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radionuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components. 9 figs.

Precision limits of lock-in amplifiers below unity signal-to-noise ratios

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gillies, G.T.; Allison, S.W.

1986-02-01

An investigation of noise-related performance limits of commercial-grade lock-in amplifiers has been carried out. The dependence of the output measurement error on the input signal-to-noise ratio was established in each case and measurements of noise-related gain variations were made.

Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) Designs Submitted to Air Force Research Laboratory (AFRL) Sponsored Qorvo Fabrication

DTIC Science & Technology

2017-07-01

of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high-power MMIC amplifiers...handling capability. Figures 1 and 2 show the layouts and simulations of a simple 1-stage 3- to 6-GHz Wilkinson coupler/combiner. A 2-stage broader band...from 4 to nearly 7 GHz for the 2-stage PA design. The simple , compact broadband feedback amplifier that serves as the first-stage driver for the 2

Prototype development of a Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR)

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Tanner, Alan; Wilson, William; Dinardo, Steve; Lambrigsten, Bjorn

2005-01-01

Weather prediction and hurricane tracking would greatly benefit of a continuous imaging capability of a hemisphere at millimeter wave frequencies. We are developing a synthetic thinned aperture radiometer (STAR) prototype operating from 50 to 56 GHz as a ground-based testbed to demonstrate the technologies needed to do full earth disk atmospheric temperature soundings from Geostationary orbit with very high spatial resolution. The prototype consists of a Y-array of 24 MMIC receivers that are compact units implemented with low noise InP MMIC LNAs, second harmonic I-Q mixers, low power IF amplifiers and include internal digital bias control with serial line communication to enable low cost testing and system integration. Furthermore, this prototype STAR includes independent LO and noise calibration signal phase switching circuitry for each arm of the Y-array to verify the operation and calibration of the system.

A Distributed Amplifier System for Bilayer Lipid Membrane (BLM) Arrays With Noise and Individual Offset Cancellation.

PubMed

Crescentini, Marco; Thei, Frederico; Bennati, Marco; Saha, Shimul; de Planque, Maurits R R; Morgan, Hywel; Tartagni, Marco

2015-06-01

Lipid bilayer membrane (BLM) arrays are required for high throughput analysis, for example drug screening or advanced DNA sequencing. Complex microfluidic devices are being developed but these are restricted in terms of array size and structure or have integrated electronic sensing with limited noise performance. We present a compact and scalable multichannel electrophysiology platform based on a hybrid approach that combines integrated state-of-the-art microelectronics with low-cost disposable fluidics providing a platform for high-quality parallel single ion channel recording. Specifically, we have developed a new integrated circuit amplifier based on a novel noise cancellation scheme that eliminates flicker noise derived from devices under test and amplifiers. The system is demonstrated through the simultaneous recording of ion channel activity from eight bilayer membranes. The platform is scalable and could be extended to much larger array sizes, limited only by electronic data decimation and communication capabilities.

Ka-band MMIC arrays for ACTS Aero Terminal Experiment

NASA Technical Reports Server (NTRS)

Raquet, C.; Zakrajsek, R.; Lee, R.; Turtle, J.

1992-01-01

An antenna system consisting of three experimental Ka-band active arrays using GaAs MMIC devices at each radiating element for electronic beam steering and distributed power amplification is presented. The MMIC arrays are to be demonstrated in the ACTS Aeronautical Terminal Experiment, planned for early 1994. The experiment is outlined, with emphasis on a description of the antenna system. Attention is given to the way in which proof-of-concept MMIC arrays featuring three different state-of-the-art approaches to Ka-band MMIC insertion are being incorporated into an experimental aircraft terminal for the demonstration of an aircraft-to-satellite link, providing a basis for follow-on MMIC array development.

Cross correlation measurement of low frequency conductivity noise

NASA Astrophysics Data System (ADS)

Jain, Aditya Kumar; Nigudkar, Himanshu; Chakraborti, Himadri; Udupa, Aditi; Gupta, Kantimay Das

2018-04-01

In order to study the low frequency noise(1/f noise)an experimental technique based on cross correlation of two channels is presented. In this method the device under test (DUT)is connected to the two independently powered preamplifiers in parallel. The amplified signals from the two preamplifiers are fed to two channels of a digitizer. Subsequent data processing largelyeliminates the uncorrelated noise of the two channels. This method is tested for various commercial carbon/metal film resistors by measuring equilibrium thermal noise (4kBTR). The method is then modified to study the non-equilibrium low frequency noise of heterostructure samples using fiveprobe configuration. Five contact probes allow two parts of the sample to become two arms of a balanced bridge. This configuration helps in suppressing the effect of power supply fluctuations, bath temperature fluctuations and contact resistances.

The effect of pumping noise on the characteristics of a single-stage parametric amplifier

NASA Astrophysics Data System (ADS)

Medvedev, S. Iu.; Muzychuk, O. V.

1983-10-01

An analysis is made of the operation of a single-stage parametric amplifier based on a varactor with a sharp transition. Analytical expressions are obtained for the statistical moments of the output signal, the signal-noise ratio, and other characteristics in the case when the output signal and the pump are a mixture of harmonic oscillation and Gaussian noise. It is shown that, when a noise component is present in the pump, an increase of its harmonic component to values close to the threshold leads to a sharp decrease in the signal-noise ratio at the amplifier output.

Numerical investigation of differential phase noise and its power penalty for optical amplification using semiconductor optical amplifiers in DPSK applications

NASA Astrophysics Data System (ADS)

Hong, Wei; Huang, Dexiu; Zhang, Xinliang; Zhu, Guangxi

2007-11-01

A thorough simulation and evaluation of phase noise for optical amplification using semiconductor optical amplifier (SOA) is very important for predicting its performance in differential phase shift keyed (DPSK) applications. In this paper, standard deviation and probability distribution of differential phase noise are obtained from the statistics of simulated differential phase noise. By using a full-wave model of SOA, the noise performance in the entire operation range can be investigated. It is shown that nonlinear phase noise substantially contributes to the total phase noise in case of a noisy signal amplified by a saturated SOA and the nonlinear contribution is larger with shorter SOA carrier lifetime. Power penalty due to differential phase noise is evaluated using a semi-analytical probability density function (PDF) of receiver noise. Obvious increase of power penalty at high signal input powers can be found for low input OSNR, which is due to both the large nonlinear differential phase noise and the dependence of BER vs. receiving power curvature on differential phase noise standard deviation.

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

NASA Technical Reports Server (NTRS)

Ma, Zhenqiang; Jiang, Ningyue; Ponchak, George E.; Alterovitz, Samuel A.

2005-01-01

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Analysis on frequency response of trans-impedance amplifier (TIA) for signal-to-noise ratio (SNR) enhancement in optical signal detection system using lock-in amplifier (LIA)

NASA Astrophysics Data System (ADS)

Kim, Ji-Hoon; Jeon, Su-Jin; Ji, Myung-Gi; Park, Jun-Hee; Choi, Young-Wan

2017-02-01

Lock-in amplifier (LIA) has been widely used in optical signal detection systems because it can measure small signal under high noise level. Generally, The LIA used in optical signal detection system is composed of transimpedance amplifier (TIA), phase sensitive detector (PSD) and low pass filter (LPF). But commercial LIA using LPF is affected by flicker noise. To avoid flicker noise, there is 2ω detection LIA using BPF. To improve the dynamic reserve (DR) of the 2ω LIA, the signal to noise ratio (SNR) of the TIA should be improved. According to the analysis of frequency response of the TIA, the noise gain can be minimized by proper choices of input capacitor (Ci) and feed-back network in the TIA in a specific frequency range. In this work, we have studied how the SNR of the TIA can be improved by a proper choice of frequency range. We have analyzed the way to control this frequency range through the change of passive component in the TIA. The result shows that the variance of the passive component in the TIA can change the specific frequency range where the noise gain is minimized in the uniform gain region of the TIA.

A Low-Noise, Wideband Preamplifier for a Fourier-Transform Ion Cyclotron Resonance Mass Spectrometer

PubMed Central

Mathur, Raman; Knepper, Ronald W.; O'Connor, Peter B.

2009-01-01

FTMS performance parameters such as limits of detection, dynamic range, sensitivity, and even mass accuracy and resolution can be greatly improved by enhancing its detection circuit. An extended investigation of significant design considerations for optimal signal-to-noise ratio in an FTMS detection circuit are presented. A low noise amplifier for an FTMS is developed based on the discussed design rules. The amplifier has a gain of ≈ 3500 and a bandwidth of 10 kHz - 1 MHz corresponding to m/z range of 100 Da to 10 kDa (at 7 Tesla). The performance of the amplifier was tested on a MALDI-FTMS, and has demonstrated a 25-fold reduction in noise in a mass spectrum of C60 compared to that of a commercial amplifier. PMID:18029195

An implantable integrated low-power amplifier-microelectrode array for Brain-Machine Interfaces.

PubMed

Patrick, Erin; Sankar, Viswanath; Rowe, William; Sanchez, Justin C; Nishida, Toshikazu

2010-01-01

One of the important challenges in designing Brain-Machine Interfaces (BMI) is to build implantable systems that have the ability to reliably process the activity of large ensembles of cortical neurons. In this paper, we report the design, fabrication, and testing of a polyimide-based microelectrode array integrated with a low-power amplifier as part of the Florida Wireless Integrated Recording Electrode (FWIRE) project at the University of Florida developing a fully implantable neural recording system for BMI applications. The electrode array was fabricated using planar micromachining MEMS processes and hybrid packaged with the amplifier die using a flip-chip bonding technique. The system was tested both on bench and in-vivo. Acute and chronic neural recordings were obtained from a rodent for a period of 42 days. The electrode-amplifier performance was analyzed over the chronic recording period with the observation of a noise floor of 4.5 microVrms, and an average signal-to-noise ratio of 3.8.

Enhanced performance CCD output amplifier

DOEpatents

Dunham, Mark E.; Morley, David W.

1996-01-01

A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.

Noise and frequency response of silicon photodiode operational amplifier combination.

PubMed

Hamstra, R H; Wendland, P

1972-07-01

The noise in dark and illuminated Schottky barrier and diffused PIN non-guard-ring photodiodes has been measured between 0.1 Hz and 10 kHz and compared to theory with an excellent fit. It is shown that diodes used photovoltaically are free of 1/f noise in the dark. It is also demonstrated that there is an optimum bias (ca. 100 mV) for minimum noise equivalent power. When only a resistive load is used with a detector, it often determines the frequency response and noise of the detector circuit. We develop and demonstrate equations for the major improvements in both noise and frequency response that can be obtained using a current mode (inverting) operational amplifier.

High-power all-fiber ultra-low noise laser

NASA Astrophysics Data System (ADS)

Zhao, Jian; Guiraud, Germain; Pierre, Christophe; Floissat, Florian; Casanova, Alexis; Hreibi, Ali; Chaibi, Walid; Traynor, Nicholas; Boullet, Johan; Santarelli, Giorgio

2018-06-01

High-power ultra-low noise single-mode single-frequency lasers are in great demand for interferometric metrology. Robust, compact all-fiber lasers represent one of the most promising technologies to replace the current laser sources in use based on injection-locked ring resonators or multi-stage solid-state amplifiers. Here, a linearly polarized high-power ultra-low noise all-fiber laser is demonstrated at a power level of 100 W. Special care has been taken in the study of relative intensity noise (RIN) and its reduction. Using an optimized servo actuator to directly control the driving current of the pump laser diode, we obtain a large feedback bandwidth of up to 1.3 MHz. The RIN reaches - 160 dBc/Hz between 3 and 20 kHz.

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

NASA Technical Reports Server (NTRS)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

NASA Technical Reports Server (NTRS)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Circuit Models and Experimental Noise Measurements of Micropipette Amplifiers for Extracellular Neural Recordings from Live Animals

PubMed Central

Chen, Chang Hao; Pun, Sio Hang; Mak, Peng Un; Vai, Mang I; Klug, Achim; Lei, Tim C.

2014-01-01

Glass micropipettes are widely used to record neural activity from single neurons or clusters of neurons extracellularly in live animals. However, to date, there has been no comprehensive study of noise in extracellular recordings with glass micropipettes. The purpose of this work was to assess various noise sources that affect extracellular recordings and to create model systems in which novel micropipette neural amplifier designs can be tested. An equivalent circuit of the glass micropipette and the noise model of this circuit, which accurately describe the various noise sources involved in extracellular recordings, have been developed. Measurement schemes using dead brain tissue as well as extracellular recordings from neurons in the inferior colliculus, an auditory brain nucleus of an anesthetized gerbil, were used to characterize noise performance and amplification efficacy of the proposed micropipette neural amplifier. According to our model, the major noise sources which influence the signal to noise ratio are the intrinsic noise of the neural amplifier and the thermal noise from distributed pipette resistance. These two types of noise were calculated and measured and were shown to be the dominating sources of background noise for in vivo experiments. PMID:25133158

Noise Characterization of Erbium-Doped Fiber Amplifiers and Avalanche Photodiodes in Optical Communication Systems.

NASA Astrophysics Data System (ADS)

Kahraman, Gokalp

We examine the performance of optical communication systems using erbium-doped fiber amplifiers (OFAs) and avalanche photodiodes (APDs) including nonlinear and transient effects in the former and transient effects in the latter. Transient effects become important as these amplifiers are operated at very high data rates. Nonlinear effects are important for high gain amplifiers. In most studies of noise in these devices, the temporal and nonlinear effects have been ignored. We present a quantum theory of noise in OFAs including the saturation of the atomic population inversion and the pump depletion. We study the quantum-statistical properties of pulse amplification. The generating function of the output photon number distribution (PND) is determined as a function of time during the course of the pulse with an arbitrary input PND assumed. Under stationary conditions, we determine the Kolmogorov equation obeyed by the PND. The PND at the output is determined for arbitrary input distributions. The effect of the counting time and the filter bandwidth used by the detection circuit is determined. We determine the gain, the noise figure, and the sensitivity of receivers using OFAs as preamplifiers, including the effect of backward amplified spontaneous emission (ASE). Backward ASE degrades the noise figure and the sensitivity by depleting the population inversion at the input side of the fiber and thus increasing the noise during signal amplification. We show that the sensitivity improves with the bit rate at low rates but degrades at high rates. We provide a stochastic model that describes the time dynamics in a double-carrier multiplication (DCM) APD. A discrete stochastic model for the electron/hole motion and multiplication is defined on a spatio-temporal lattice and used to derive recursive equations for the mean, the variance, and the autocorrelation of the impulse response as functions of time. The power spectral density of the photocurrent produced in response to a

The potential impact of MMICs on future satellite communications: Executive summary

NASA Technical Reports Server (NTRS)

Dunn, Vernon E.

1988-01-01

This Executive Summary presents the results of a 17-month study on the future trends and requirments for Monolithic Microwave Integrated circuits (MMIC) for space communication application. Specifically this report identifies potential space communication applications of MMICs, assesses the impact of MMIC on the classes of systems that were identified, determines the present status and probable 10-year growth in capability of required MMIC and competing technologies, identifies the applications most likely to benefit from further MMIC development, and presents recommendations for NASA development activities to address the needs of these applications.

A Hybrid Semi-Digital Transimpedance Amplifier With Noise Cancellation Technique for Nanopore-Based DNA Sequencing.

PubMed

Hsu, Chung-Lun; Jiang, Haowei; Venkatesh, A G; Hall, Drew A

2015-10-01

Over the past two decades, nanopores have been a promising technology for next generation deoxyribonucleic acid (DNA) sequencing. Here, we present a hybrid semi-digital transimpedance amplifier (HSD-TIA) to sense the minute current signatures introduced by single-stranded DNA (ssDNA) translocating through a nanopore, while discharging the baseline current using a semi-digital feedback loop. The amplifier achieves fast settling by adaptively tuning a DC compensation current when a step input is detected. A noise cancellation technique reduces the total input-referred current noise caused by the parasitic input capacitance. Measurement results show the performance of the amplifier with 31.6 M Ω mid-band gain, 950 kHz bandwidth, and 8.5 fA/ √Hz input-referred current noise, a 2× noise reduction due to the noise cancellation technique. The settling response is demonstrated by observing the insertion of a protein nanopore in a lipid bilayer. Using the nanopore, the HSD-TIA was able to measure ssDNA translocation events.

Compact low-noise preamplifier for noise spectroscopy with biased photodiodes in cargo inspection systems

NASA Astrophysics Data System (ADS)

Benetti, Bob; Langeveld, Willem G. J.

2013-09-01

Noise Spectroscopy, a.k.a. Z-determination by Statistical Count-rate ANalysis (Z-SCAN), is a statistical technique to determine a quantity called the "noise figure" from digitized waveforms of pulses of transmitted x-rays in cargo inspection systems. Depending only on quantities related to the x-ray energies, it measures a characteristic of the transmitted x-ray spectrum, which depends on the atomic number, Z, of the material penetrated. The noise figure can thus be used for material separation. In an 80-detector prototype, scintillators are used with large-area photodiodes biased at 80V and digitized using 50-MSPS 12-bit ADC boards. We present an ultra-compact low-noise preamplifier design, with one high-gain and one low-gain channel per detector for improved dynamic range. To achieve adequate detection sensitivity and spatial resolution each dual-gain preamplifier channel must fit within a 12.7 mm wide circuit board footprint and maintain adequate noise immunity to conducted and radiated interference from adjacent channels. The novel design included iterative SPICE analysis of transient response, dynamic range, frequency response, and noise analysis to optimize the selection and configuration of amplifiers and filter response. We discuss low-noise active and passive components and low-noise techniques for circuit board layout that are essential to achieving the design goals, and how the completed circuit board performed in comparison to the predicted responses.

Low-noise front-end electronics for detection of intermediate-frequency weak light signals

NASA Astrophysics Data System (ADS)

Lin, Cunbao; Yan, Shuhua; Du, Zhiguang; Wei, Chunhua; Wang, Guochao

2015-02-01

A novel low-noise front-end electronics was proposed for detection of light signals with intensity about 10 μW and frequency above 2.7 MHz. The direct current (DC) power supply, pre-amplifier and main-amplifier were first designed, simulated and then realized. Small-size components were used to make the power supply small, and the pre-amplifier and main-amplifier were the least capacitors to avoid the phase shift of the signals. The performance of the developed front-end electronics was verified in cross-grating diffraction experiments. The results indicated that the output peak-topeak noise of the +/-5 V DC power supply was about 2 mV, and the total output current was 1.25 A. The signal-to-noise ratio (SNR) of the output signal of the pre-amplifier was about 50 dB, and it increased to nearly 60 dB after the mainamplifier, which means this front-end electronics was especially suitable for using in the phase-sensitive and integrated precision measurement systems.

Saturation of the right-leg drive amplifier in low-voltage ECG monitors.

PubMed

Freeman, Daniel K; Gatzke, Ronald D; Mallas, Georgios; Chen, Yu; Brouse, Chris J

2015-01-01

Electrocardiogram (ECG) monitoring is a critical tool in patient care, but its utility is often balanced with frustration from clinicians who are constantly distracted by false alarms. This has motivated the need to readdress the major factors that contribute to ECG noise with the goal of reducing false alarms. In this study, we describe a previously unreported phenomenon in which ECG noise can result from an unintended interaction between two systems: 1) the dc lead-off circuitry that is used to detect whether electrodes fall off the patient; and 2) the right-leg drive (RLD) system that is responsible for reducing ac common-mode noise that couples into the body. Using a circuit model to study this interaction, we found that in the presence of a dc lead-off system, even moderate increases in the right-leg skin-electrode resistance can cause the RLD amplifier to saturate. Such saturation can produce ECG noise because the RLD amplifier will no longer be capable of attenuating ac common-mode noise on the body. RLD saturation is particularly a problem for modern ECG monitors that use low-voltage supply levels. For example, for a 12-lead ECG and a 2 V power supply, saturation will occur when the right-leg electrode resistance reaches only 2 MΩ. We discuss several design solutions that can be used in low-voltage monitors to avoid RLD saturation.

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.

1989-05-01

The objectives of this research are to develop analytical and computer aided design techniques for monolithic microwave and millimeter wave integrated circuits (MMIC and MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low noise and medium power microwave and millimeter wave applications. Circuits to be considered include monolithic low noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs were developed, which include large signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm POSM was developed and implemented in the general Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of largesignal nonlinear circuits.

Reduced transposed flicker noise in microwave oscillators using gaas-based feedforward amplifiers.

PubMed

Everard, Jeremy K A; Broomfield, Carl D

2007-06-01

Transposed flicker noise reduction and removal is demonstrated in 7.6 GHz microwave oscillators for offsets greater than 10 kHz. This is achieved by using a GaAs-based feedforward power amplifier as the oscillation-sustaining stage and incorporating a limiter and resonator elsewhere in the loop. 20 dB noise suppression is demonstrated at 12.5 kHz offset when the error correcting amplifier is switched on. Three oscillator pairs have been built. A transmission line feedback oscillator with a Qo of 180 and two sapphire-based, dielectric resonator oscillators (DROs) with a Qo of 44,500. The difference between the two DROs is a change in the limiter threshold power level of 10 dB. The phase noise rolls-off at (1/f)(2) for offsets greater than 10 kHz for the transmission line oscillator and is set by the thermal noise to within 0-1 dB of the theoretical minimum. The noise performance of the DROs is within 6-12 dB of the theory. Possible reasons for this discrepancy are presented.

Ka-Band Wide-Bandgap Solid-State Power Amplifier: Hardware Validation

NASA Technical Reports Server (NTRS)

Epp, L.; Khan, P.; Silva, A.

2005-01-01

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solid-state power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents proof-of-concept hardware used to validate power-combining technologies that may enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results in previous articles [1-3] indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. Previous architecture performance analyses and estimates indicate that the proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This combining efficiency would correspond to MMIC requirements of 5- to 10-W output power and >48 percent PAE. In order to validate the performance estimates of the three proposed architectures, measurements of proof-of-concept hardware are reported here.

Low-noise correlation measurements based on software-defined-radio receivers and cooled microwave amplifiers.

PubMed

Nieminen, Teemu; Lähteenmäki, Pasi; Tan, Zhenbing; Cox, Daniel; Hakonen, Pertti J

2016-11-01

We present a microwave correlation measurement system based on two low-cost USB-connected software defined radio dongles modified to operate as coherent receivers by using a common local oscillator. Existing software is used to obtain I/Q samples from both dongles simultaneously at a software tunable frequency. To achieve low noise, we introduce an easy low-noise solution for cryogenic amplification at 600-900 MHz based on single discrete HEMT with 21 dB gain and 7 K noise temperature. In addition, we discuss the quantization effects in a digital correlation measurement and determination of optimal integration time by applying Allan deviation analysis.

338-GHz Semiconductor Amplifier Module

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Fung, King Man; Rasisic, Vesna; Deal, William; Leong, Kevin; Mei, Xiao Bing; Yoshida, Wayne; Liu, Po-Hsin;

Millimeter-wave MMIC technology for smart weapons

NASA Astrophysics Data System (ADS)

Seashore, Charles R.

1994-12-01

Millimeter wave MMIC component technology has made dramatic progress over the last ten years largely due to funding stimulation received under the ARPA Tri-Service MIMIC program. In several smart weapon systems, MMIC components are now specified as the baseline approach for millimeter wave radar transceiver hardware. Availability of this new frontier in microelectronics has also enabled realization of sensor fusion for multispectral capability to defeat many forms of known countermeasures. The current frequency range for these MMIC-based components is approximately 30 to 100 GHz. In several cases, it has been demonstrated that the MMIC component performance has exceeded that available from hybrid microstrip circuits using selected discrete devices. However, challenges still remain in chip producibility enhancement and cost reduction since many of the essential device structure candidates are themselves emerging technologies with a limited wafer fabrication history and accumulated test databases. It is concluded that smart weapons of the future will rely heavily on advanced microelectronics to satisfy performance requirements as well as meeting stringent packaging and power source constraints.

Measurements of the Low Frequency Gain Fluctuations of a 30 GHz High-Electron-Mobility-Transistor Cryogenic Amplifier

NASA Technical Reports Server (NTRS)

Jarosik, Norman

1994-01-01

Low frequency gain fluctuations of a 30 GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15 K load. Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.

Noise-driven neuromorphic tuned amplifier.

PubMed

Fanelli, Duccio; Ginelli, Francesco; Livi, Roberto; Zagli, Niccoló; Zankoc, Clement

2017-12-01

We study a simple stochastic model of neuronal excitatory and inhibitory interactions. The model is defined on a directed lattice and internodes couplings are modulated by a nonlinear function that mimics the process of synaptic activation. We prove that such a system behaves as a fully tunable amplifier: the endogenous component of noise, stemming from finite size effects, seeds a coherent (exponential) amplification across the chain generating giant oscillations with tunable frequencies, a process that the brain could exploit to enhance, and eventually encode, different signals. On a wider perspective, the characterized amplification process could provide a reliable pacemaking mechanism for biological systems. The device extracts energy from the finite size bath and operates as an out of equilibrium thermal machine, under stationary conditions.

Temperature dependent GaAs MMIC radiation effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, W.T.; Roussos, J.A.; Gerdes, J.

1993-12-01

The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long term current transients are dominated by electron trapping in previously existing defects. At low temperature in the range 126 to 259 K neutron induced lattice damage appears to play an increasingly important role in producing long term current transients.

Computer-Aided Design of Low-Noise Microwave Circuits

NASA Astrophysics Data System (ADS)

Wedge, Scott William

1991-02-01

Devoid of most natural and manmade noise, microwave frequencies have detection sensitivities limited by internally generated receiver noise. Low-noise amplifiers are therefore critical components in radio astronomical antennas, communications links, radar systems, and even home satellite dishes. A general technique to accurately predict the noise performance of microwave circuits has been lacking. Current noise analysis methods have been limited to specific circuit topologies or neglect correlation, a strong effect in microwave devices. Presented here are generalized methods, developed for computer-aided design implementation, for the analysis of linear noisy microwave circuits comprised of arbitrarily interconnected components. Included are descriptions of efficient algorithms for the simultaneous analysis of noisy and deterministic circuit parameters based on a wave variable approach. The methods are therefore particularly suited to microwave and millimeter-wave circuits. Noise contributions from lossy passive components and active components with electronic noise are considered. Also presented is a new technique for the measurement of device noise characteristics that offers several advantages over current measurement methods.

Hybrid matrix amplifier

DOEpatents

Martens, J.S.; Hietala, V.M.; Plut, T.A.

1995-01-03

The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N[times]M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise. 6 figures.

Hybrid matrix amplifier

DOEpatents

Martens, Jon S.; Hietala, Vincent M.; Plut, Thomas A.

1995-01-01

The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N.times.M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise.

High-Altitude MMIC Sounding Radiometer for the Global Hawk Unmanned Aerial Vehicle

NASA Technical Reports Server (NTRS)

Brown, Shannon T.; Lim, Boon H.; Tanner, Alan B.; Tanabe, Jordan M.; Kangaslahti, Pekka P.; Gaier, Todd C.; Soria, Mary M.; Lambrigtsen, Bjorn H.; Denning, Richard F.; Stachnik, Robert A.

2012-01-01

Microwave imaging radiometers operating in the 50-183 GHz range for retrieving atmospheric temperature and water vapor profiles from airborne platforms have been limited in the spatial scales of atmospheric structures that are resolved not because of antenna aperture size, but because of high receiver noise masking the small variations that occur on small spatial scales. Atmospheric variability on short spatial and temporal scales (second/ km scale) is completely unresolved by existing microwave profilers. The solution was to integrate JPL-designed, high-frequency, low-noise-amplifier (LNA) technology into the High-Altitude MMIC Sounding Radiometer (HAMSR), which is an airborne microwave sounding radiometer, to lower the system noise by an order of magnitude to enable the instrument to resolve atmospheric variability on small spatial and temporal scales. HAMSR has eight sounding channels near the 60-GHz oxygen line complex, ten channels near the 118.75-GHz oxygen line, and seven channels near the 183.31-GHz water vapor line. The HAMSR receiver system consists of three heterodyne spectrometers covering the three bands. The antenna system consists of two back-to-back reflectors that rotate together at a programmable scan rate via a stepper motor. A single full rotation includes the swath below the aircraft followed by observations of ambient (roughly 0 C in flight) and heated (70 C) blackbody calibration targets located at the top of the rotation. A field-programmable gate array (FPGA) is used to read the digitized radiometer counts and receive the reflector position from the scan motor encoder, which are then sent to a microprocessor and packed into data files. The microprocessor additionally reads telemetry data from 40 onboard housekeeping channels (containing instrument temperatures), and receives packets from an onboard navigation unit, which provides GPS time and position as well as independent attitude information (e.g., heading, roll, pitch, and yaw). The raw

Argus: a 16-pixel millimeter-wave spectrometer for the Green Bank Telescope

NASA Astrophysics Data System (ADS)

Sieth, Matthew; Devaraj, Kiruthika; Voll, Patricia; Church, Sarah; Gawande, Rohit; Cleary, Kieran; Readhead, Anthony C. S.; Kangaslahti, Pekka; Samoska, Lorene; Gaier, Todd; Goldsmith, Paul F.; Harris, Andrew I.; Gundersen, Joshua O.; Frayer, David; White, Steve; Egan, Dennis; Reeves, Rodrigo

2014-07-01

We report on the development of Argus, a 16-pixel spectrometer, which will enable fast astronomical imaging over the 85-116 GHz band. Each pixel includes a compact heterodyne receiver module, which integrates two InP MMIC low-noise amplifiers, a coupled-line bandpass filter and a sub-harmonic Schottky diode mixer. The receiver signals are routed to and from the multi-chip MMIC modules with multilayer high frequency printed circuit boards, which includes LO splitters and IF amplifiers. Microstrip lines on flexible circuitry are used to transport signals between temperature stages. The spectrometer frontend is designed to be scalable, so that the array design can be reconfigured for future instruments with hundreds of pixels. Argus is scheduled to be commissioned at the Robert C. Byrd Green Bank Telescope in late 2014. Preliminary data for the first Argus pixels are presented.

HEMT Amplifiers and Equipment for their On-Wafer Testing

NASA Technical Reports Server (NTRS)

Fung, King man; Gaier, Todd; Samoska, Lorene; Deal, William; Radisic, Vesna; Mei, Xiaobing; Lai, Richard

2008-01-01

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Noise thermometry at ultra-low temperatures.

PubMed

Rothfuss, D; Reiser, A; Fleischmann, A; Enss, C

2016-03-28

The options for primary thermometry at ultra-low temperatures are rather limited. In practice, most laboratories are using (195)Pt NMR thermometers in the microkelvin range. In recent years, current sensing direct current superconducting quantum interference devices (DC-SQUIDs) have enabled the use of noise thermometry in this temperature range. Such devices have also demonstrated the potential for primary thermometry. One major advantage of noise thermometry is the fact that no driving current is needed to operate the device and thus the heat dissipation within the thermometer can be reduced to a minimum. Ultimately, the intrinsic power dissipation is given by the negligible back action of the readout SQUID. For thermometry in low-temperature experiments, current noise thermometers and magnetic flux fluctuation thermometers have proved to be most suitable. To make use of such thermometers at ultra-low temperatures, we have developed a cross-correlation technique that reduces the amplifier noise contribution to a negligible value. For this, the magnetic flux fluctuations caused by the Brownian motion of the electrons in our noise source are measured inductively by two DC-SQUID magnetometers simultaneously and the signals from these two channels are cross-correlated. Experimentally, we have characterized a thermometer made of a cold-worked high-purity copper cylinder with a diameter of 5 mm and a length of 20 mm for temperatures between 42 μK and 0.8 K. For a given temperature, a measuring time below 1 min is sufficient to reach a precision of better than 1%. The extremely low power dissipation in the thermometer allows continuous operation without heating effects. © 2016 The Author(s).

High Temperature Superconductivity Applications for Electronic Warfare and Microwave Systems

DTIC Science & Technology

1990-05-01

instantaneous frequency measurement (IFM), as well as, switched delay lines for EW radar range deception and low loss, high resolution MMIC phase...Junction (JJ). This device has been demonstrated in LTSC and is used in very stable ( low noise ), frequency selective, oscillators and very low noise ...following HTSC components: 1) MMIC Filters 2) MMIC Delay Lines/Phase Shifters 3) Microwave Resonators 4) Antenna Feed Networks 5) Low Frequency Antennas 1

Integrated-circuit balanced parametric amplifier

NASA Technical Reports Server (NTRS)

Dickens, L. E.

1975-01-01

Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.

Field-effect transistor improves electrometer amplifier

NASA Technical Reports Server (NTRS)

Munoz, R.

1964-01-01

An electrometer amplifier uses a field effect transistor to measure currents of low amperage. The circuit, developed as an ac amplifier, is used with an external filter which limits bandwidth to achieve optimum noise performance.

Shot noise limit of chemically amplified resists with photodecomposable quenchers used for extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

2017-06-01

In lithography using high-energy photons such as an extreme ultraviolet (EUV) radiation, the shot noise of photons is a critical issue. The shot noise is a cause of line edge/width roughness (LER/LWR) and stochastic defect generation and limits the resist performance. In this study, the effects of photodecomposable quenchers were investigated from the viewpoint of the shot noise limit. The latent images of line-and-space patterns with 11 nm half-pitch were calculated using a Monte Carlo method. In the simulation, the effect of secondary electron blur was eliminated to clarify the shot noise limits regarding stochastic phenomena such as LER. The shot noise limit for chemically amplified resists with acid generators and photodecomposable quenchers was approximately the same as that for chemically amplified resists with acid generators and conventional quenchers when the total sensitizer concentration was the same. The effect of photodecomposable quenchers on the shot noise limit was essentially the same as that of acid generators.

A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

NASA Astrophysics Data System (ADS)

Gasmi, Khaled

2018-02-01

An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

Developing Low-Noise GaAs JFETs For Cryogenic Operation

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.

1995-01-01

Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.

Electromagnetic Modelling of MMIC CPWs for High Frequency Applications

NASA Astrophysics Data System (ADS)

Sinulingga, E. P.; Kyabaggu, P. B. K.; Rezazadeh, A. A.

2018-02-01

Realising the theoretical electrical characteristics of components through modelling can be carried out using computer-aided design (CAD) simulation tools. If the simulation model provides the expected characteristics, the fabrication process of Monolithic Microwave Integrated Circuit (MMIC) can be performed for experimental verification purposes. Therefore improvements can be suggested before mass fabrication takes place. This research concentrates on development of MMIC technology by providing accurate predictions of the characteristics of MMIC components using an improved Electromagnetic (EM) modelling technique. The knowledge acquired from the modelling and characterisation process in this work can be adopted by circuit designers for various high frequency applications.

Low noise charge ramp electrometer

DOEpatents

Morgan, John P.; Piper, Thomas C.

1992-01-01

An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit.

Advanced Concepts in Josephson Junction Reflection Amplifiers

NASA Astrophysics Data System (ADS)

Lähteenmäki, Pasi; Vesterinen, Visa; Hassel, Juha; Paraoanu, G. S.; Seppä, Heikki; Hakonen, Pertti

2014-06-01

Low-noise amplification at microwave frequencies has become increasingly important for the research related to superconducting qubits and nanoelectromechanical systems. The fundamental limit of added noise by a phase-preserving amplifier is the standard quantum limit, often expressed as noise temperature . Towards the goal of the quantum limit, we have developed an amplifier based on intrinsic negative resistance of a selectively damped Josephson junction. Here we present measurement results on previously proposed wide-band microwave amplification and discuss the challenges for improvements on the existing designs. We have also studied flux-pumped metamaterial-based parametric amplifiers, whose operating frequency can be widely tuned by external DC-flux, and demonstrate operation at pumping, in contrast to the typical metamaterial amplifiers pumped via signal lines at.

Intensity noise reduction of a high-power nonlinear femtosecond fiber amplifier based on spectral-breathing self-similar parabolic pulse evolution

NASA Astrophysics Data System (ADS)

Wang, Sijia; Liu, Bowen; Song, Youjian; Hu, Minglie

2016-04-01

We report on a simple passive scheme to reduce the intensity noise of high-power nonlinear fiber amplifiers by use of the spectral-breathing parabolic evolution of the pulse amplification with an optimized negative initial chirp. In this way, the influences of amplified spontaneous emission (ASE) on the amplifier intensity noise can be efficiently suppressed, owing to the lower overall pulse chirp, shorter spectral broadening distance, as well as the asymptotic attractive nature of self-similar pulse amplification. Systematic characterizations of the relative intensity noise (RIN) of a free-running nonlinear Yb-doped fiber amplifier are performed over a series of initial pulse parameters. Experiments show that the measured amplifier RIN increases respect to the decreased input pulse energy, due to the increased amount of ASE noise. For pulse amplification with a proper negative initial chirp, the increase of RIN is found to be smaller than with a positive initial chirp, confirming the ASE noise tolerance of the proposed spectral-breathing parabolic amplification scheme. At the maximum output average power of 27W (25-dB amplification gain), the incorporation of an optimum negative initial chirp (-0.84 chirp parameter) leads to a considerable amplifier root-mean-square (rms) RIN reduction of ~20.5% (integrated from 10 Hz to 10 MHz Fourier frequency). The minimum amplifier rms RIN of 0.025% (integrated from 1 kHz to 5 MHz Fourier frequency) is obtained along with the transform-limited compressed pulse duration of 55fs. To our knowledge, the demonstrated intensity noise performance is the lowest RIN level measured from highpower free-running femtosecond fiber amplifiers.

Low-frequency noise measurements: applications, methodologies and instrumentation

NASA Astrophysics Data System (ADS)

Ciofi, Carmine; Neri, Bruno

2003-05-01

Low frequency noise measurements (f<10Hz) are a powerful tool for the investigation of the quality and reliability of electron devices and material. In most cases, however, the application of this technique is made quite difficult both because of the effect of external interferences (temperature fluctuations, EMI, mechanical vibrations, etc.) and because of the high level of flicker noise of the commercial instrumentation. In this paper the most remarkable results we obtained by using low frequency noise measurements for the characterization of the reliability of VLSI metallic interconnections and thin oxides are resumed. Moreover, we discuss the effects of the several sources of noise and interferences which contribute to reduce the sensitivity of the measurement chain. In particular, we demonstrate that by means of a proper design, dedicated instrumentation can be built which allows for a considerable reduction of the overall background noise. Examples will be given with reference to voltage and transresistance amplifiers (both AC and DC coupled), to programmable biasing systems (both current and voltage sources), to thermal stabilization systems and to data acquisition systems. Finally, we will discuss methods which may allow, in proper conditions, to accurately measure noise levels well below the background noise of the input preamplifiers coupled to the device under test. As the systems we discuss are characterized by moderate complexity and employ components readily available on the market, we trust that this paper may also serve as a simple guideline to anyone interested in exploiting the possibility of using very low frequency noise measurements by building his own instrumentation.

Low Voltage Current-Reused Pseudo-Differential Programmable Gain Amplifier

NASA Astrophysics Data System (ADS)

Nguyen, Huy-Hieu; Lee, Jeong-Seon; Lee, Sang-Gug

This paper reports a current-reused pseudo-differential (CRPD) programmable gain amplifier (PGA) that demonstrates small size, low power, wide band, low noise, and high linearity operation with 4 control bits. Implemented in 0.18um CMOS technology, the PGA shows the gain range from -9.9 to 8.3dB with gain error of less than ±0.38dB. The IIP3, P1dB, and smallest 3-dB bandwidth are 10.5 to 27dBm, -9 to 9.5dBm, and 250MHz, respectively. The PGA occupies the chip area of 0.04mm2 and consumes only 460 µA from a 1.2V supply.

First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

NASA Technical Reports Server (NTRS)

Fung, A. K.; Gaier, T.; Samoska, L.; Deal, W. R.; Radisic, V.; Mei, X. B.; Yoshida, W.; Liu, P. S.; Uyeda, J.; Barsky, M.;

Noise temperature and noise figure concepts: DC to light

NASA Technical Reports Server (NTRS)

Stelzried, C. T.

1982-01-01

The Deep Space Network is investigating the use of higher operational frequencies for improved performance. Noise temperature and noise figure concepts are used to describe the noise performance of these receiving systems. It is proposed to modify present noise temperature definitions for linear amplifiers so they will be valid over the range (hf/kT) 1 (hf/kT). This is important for systems operating at high frequencies and low noise temperatures, or systems requiring very accurate calibrations. The suggested definitions are such that for an ideal amplifier, T sub e = (hg/k) = T sub q and F = 1. These definitions revert to the present definition for (hf/kT) 1. Noise temperature calibrations are illustrated with a detailed example. These concepts are applied to system signal-to-noise analysis. The fundamental limit to a receiving system sensitivity is determined by the thermal noise of the source and the quantum noise limit of the receiver. The sensitivity of a receiving system consisting of an ideal linear amplifier with a 2.7 K source, degrades significantly at higher frequencies.

Low noise charge ramp electrometer

DOEpatents

Morgan, J.P.; Piper, T.C.

1992-10-06

An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit. 2 figs.

Cryogenetically Cooled Field Effect Transistors for Low-Noise Systems

NASA Technical Reports Server (NTRS)

Wollack, Edward J.; Rabin, Douglas M. (Technical Monitor)

2002-01-01

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Cryogenically Cooled Field Effect Transistors for Low-Noise Systems

NASA Technical Reports Server (NTRS)

Wollack, Edward J.

2002-01-01

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

NASA satellite communications application research, phase 2 addendum. Efficient high power, solid state amplifier for EHF communications

NASA Technical Reports Server (NTRS)

Benet, James

1994-01-01

This document is an addendum to the NASA Satellite Communications Application Research (SCAR) Phase 2 Final Report, 'Efficient High Power, Solid State Amplifier for EHF Communications.' This report describes the work performed from 1 August 1993 to 11 March 1994, under contract number NASW-4513. During this reporting period an array of transistor amplifiers was repaired by replacing all MMIC amplifier chips. The amplifier array was then tested using three different feedhorn configurations. Descriptions, procedures, and results of this testing are presented in this report, and conclusions are drawn based on the test results obtained.

Measured thermal images of a gallium arsenide power MMIC with and without RF applied to the input

NASA Astrophysics Data System (ADS)

Oxley, C. H.; Coaker, B. M.; Priestley, N. E.

2003-04-01

A gallium arsenide microwave monolithic integrated circuit (MMIC) power amplifier (M/ACom type MAAM71100) has been measured using infra-red microscope technology, with and without the application of a RF input signal. A reduction of approximately 10 °C in chip temperature was observed with the application of a RF input signal, which will influence the MTTF of the chip. Further, the measurement technique may be used to monitor the thermal impedance and dynamic cooling of RF power devices under operational conditions in complex circuits.

Affordable MMICs for Air Force systems

NASA Astrophysics Data System (ADS)

Kemerley, Robert T.; Fayette, Daniel F.

1991-05-01

The paper deals with a program directed at demonstrating affordable MMIC chips - the microwave/mm-wave monolithic integrated circuit (MIMIC) program. Focus is placed on experiments involving the growth and characterization of III-V materials, and the design, fabrication, and evaluation of ICs in the 1 to 60 GHz frequency range, as well as efforts related to the reliability testing, failure analysis, and generation of qualified manufacture's list procedures for GaAs MMICs and modules. Attributes associated with GaAs-technology devices, quality, reliability, and performance in select environments are discussed, including the dependence of these structures over temperature ranges, electrostatic discharge sensitivity, and susceptibility to environmental stresses.

GaAs MMIC elements in phased-array antennas

NASA Technical Reports Server (NTRS)

Leonard, Regis F.

1988-01-01

Over the last six years NASA Lewis Research Center has carried out a program aimed at the development of advanced monolithic microwave integrated circuit technology, principally for use in phased-array antenna applications. Arising out of the Advanced Communications Technology Satellite (ACTS) program, the initial targets of the program were chips which operated at 30 and 20 GHz. Included in this group of activities were monolithic power modules with an output of 2 watts at GHz, variable phase shifters at both 20 and 30 GHz, low noise technology at 30 GHz, and a fully integrated (phase shifter, variable gain amplifier, power amplifier) transmit module at 20 GHz. Subsequent developments are centered on NASA mission requirements, particularly Space Station communications systems and deep space data communications.

80-GHz MMIC HEMT Voltage-Controlled Oscillator

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Radisic, Vesna; Micovic, Miro; Hu, Ming; Janke, Paul; Ngo, Catherine; Nguyen, Loi

2003-01-01

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

A 4MP high-dynamic-range, low-noise CMOS image sensor

NASA Astrophysics Data System (ADS)

Ma, Cheng; Liu, Yang; Li, Jing; Zhou, Quan; Chang, Yuchun; Wang, Xinyang

2015-03-01

In this paper we present a 4 Megapixel high dynamic range, low dark noise and dark current CMOS image sensor, which is ideal for high-end scientific and surveillance applications. The pixel design is based on a 4-T PPD structure. During the readout of the pixel array, signals are first amplified, and then feed to a low- power column-parallel ADC array which is already presented in [1]. Measurement results show that the sensor achieves a dynamic range of 96dB, a dark noise of 1.47e- at 24fps speed. The dark current is 0.15e-/pixel/s at -20oC.

SiGe/Si Monolithically Integrated Amplifier Circuits

NASA Technical Reports Server (NTRS)

Katehi, Linda P. B.; Bhattacharya, Pallab

1998-01-01

With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.

Note: Expanding the bandwidth of the ultra-low current amplifier using an artificial negative capacitor.

PubMed

Xie, Kai; Liu, Yan; Li, XiaoPing; Guo, Lixin; Zhang, Hanlu

2016-04-01

The bandwidth and low noise characteristics are often contradictory in ultra-low current amplifier, because an inevitable parasitic capacitance is paralleled with the high value feedback resistor. In order to expand the amplifier's bandwidth, a novel approach was proposed by introducing an artificial negative capacitor to cancel the parasitic capacitance. The theory of the negative capacitance and the performance of the improved amplifier circuit with the negative capacitor are presented in this manuscript. The test was conducted by modifying an ultra-low current amplifier with a trans-impedance gain of 50 GΩ. The results show that the maximum bandwidth was expanded from 18.7 Hz to 3.3 kHz with more than 150 times of increase when the parasitic capacitance (∼0.17 pF) was cancelled. Meanwhile, the rise time decreased from 18.7 ms to 0.26 ms with no overshot. Any desired bandwidth or rise time within these ranges can be obtained by adjusting the ratio of cancellation of the parasitic and negative capacitance. This approach is especially suitable for the demand of rapid response to weak current, such as transient ion-beam detector, mass spectrometry analysis, and fast scanning microscope.

Non-Gaussian statistics of soliton timing jitter induced by amplifier noise.

PubMed

Ho, Keang-Po

2003-11-15

Based on first-order perturbation theory of the soliton, the Gordon-Haus timing jitter induced by amplifier noise is found to be non-Gaussian distributed. Both frequency and timing jitter have larger tail probabilities than Gaussian distribution given by the linearized perturbation theory. The timing jitter has a larger discrepancy from Gaussian distribution than does the frequency jitter.

Low noise parametric amplifiers for radio astronomy observations at 18-21 cm wavelength

NASA Technical Reports Server (NTRS)

Kanevskiy, B. Z.; Veselov, V. M.; Strukov, I. A.; Etkin, V. S.

1974-01-01

The principle characteristics and use of SHF parametric amplifiers for radiometer input devices are explored. Balanced parametric amplifiers (BPA) are considered as the SHF signal amplifiers allowing production of the amplifier circuit without a special filter to achieve decoupling. Formulas to calculate the basic parameters of a BPA are given. A modulator based on coaxial lines is discussed as the input element of the SHF. Results of laboratory tests of the receiver section and long-term stability studies of the SHF sector are presented.

Ultra-low-noise, high-impedance preamp for cryogenic detectors

NASA Technical Reports Server (NTRS)

Brown, E. R.

1985-01-01

A relatively simple room-temperature preamp design that satisfies both the low-noise and wideband requirements for the InSb Putley-mode detector and which is based on a common-drain JFET input, is presented. The design has an input capacitance of 28 pf which is much less than comparably noisy common-source amplifiers. It can be used for preamplification of 0.1 to 10 MHz signals from liquid-helium-cooled radiation detectors.

Large signal design - Performance and simulation of a 3 W C-band GaAs power MMIC

NASA Astrophysics Data System (ADS)

White, Paul M.; Hendrickson, Mary A.; Chang, Wayne H.; Curtice, Walter R.

1990-04-01

This paper describes a C-band GaAs power MMIC amplifier that achieved a gain of 17 dB and 1 dB compressed CW power output of 34 dBm across a 4.5-6.25-GHz frequency range, without design iteration. The first-pass design success was achieved due to the application of a harmonic balance simulator to define the optimum output load, using a large-signal FET model determined statistically on a well controlled foundry-ready process line. The measured performance was close to that predicted by a full harmonic balance circuit analysis.

Low-noise, transformer-coupled resonant photodetector for squeezed state generation.

PubMed

Chen, Chaoyong; Shi, Shaoping; Zheng, Yaohui

2017-10-01

In an actual setup of squeezed state generation, the stability of a squeezing factor is mainly limited by the performance of the servo-control system, which is mainly influenced by the shot noise and gain of a photodetector. We present a unique transformer-coupled LC resonant amplifier as a photodetector circuit to reduce the electronic noise and increase the gain of the photodetector. As a result, we obtain a low-noise, high gain photodetector with the gain of more than 1.8×10 5 V/A, and the input current noise of less than 4.7 pA/Hz. By adjusting the parameters of the transformer, the quality factor Q of the resonant circuit is close to 100 in the frequency range of more than 100 MHz, which meets the requirement for weak power detection in the application of squeezed state generation.

Time-Domain Computation Of Electromagnetic Fields In MMICs

NASA Technical Reports Server (NTRS)

Lansing, Faiza S.; Rascoe, Daniel L.

1995-01-01

Maxwell's equations solved on three-dimensional, conformed orthogonal grids by finite-difference techniques. Method of computing frequency-dependent electrical parameters of monolithic microwave integrated circuit (MMIC) involves time-domain computation of propagation of electromagnetic field in response to excitation by single pulse at input terminal, followed by computation of Fourier transforms to obtain frequency-domain response from time-domain response. Parameters computed include electric and magnetic fields, voltages, currents, impedances, scattering parameters, and effective dielectric constants. Powerful and efficient means for analyzing performance of even complicated MMIC.

Note: a transimpedance amplifier for remotely located quartz tuning forks.

PubMed

Kleinbaum, Ethan; Csáthy, Gábor A

2012-12-01

The cable capacitance in cryogenic and high vacuum applications of quartz tuning forks imposes severe constraints on the bandwidth and noise performance of the measurement. We present a single stage low noise transimpedance amplifier with a bandwidth exceeding 1 MHz and provide an in-depth analysis of the dependence of the amplifier parameters on the cable capacitance.

Superconducting Quantum Arrays for Wideband Antennas and Low Noise Amplifiers

NASA Technical Reports Server (NTRS)

Mukhanov, O.; Prokopemko, G.; Romanofsky, Robert R.

2014-01-01

Superconducting Quantum Iinetference Filters (SQIF) consist of a two-dimensional array of niobium Josephson Junctions formed into N loops of incommensurate area. This structure forms a magnetic field (B) to voltage transducer with an impulse like response at B0. In principle, the signal-to-noise ratio scales as the square root of N and the noise can be made arbitrarily small (i.e. The SQIF chips are expected to exhibit quantum limited noise performance). A gain of about 20 dB was recently demonstrated at 10 GHz.

A low noise synthesizer for autotuning and performance testing of hydrogen masers

NASA Technical Reports Server (NTRS)

Cloeren, J. M.; Ingold, J. S.

1984-01-01

A low noise synthesizer has been developed for use in hydrogen maser autotuning and performance evaluation. This synthesizer replaces the frequency offset maser normally used for this purpose and allows the user to maintain all masers in the ensemble at the same frequency. The synthesizer design utilizes a quartz oscillator with a BVA resonator. The oscillator has a frequency offset of 5 X 10 to the minus 8 power. The BVA oscillator is phase-locked to a hydrogen maser by means of a high gain, high stability phase-locked loop, employing low noise multipliers as phase error amplifiers. A functional block diagram of the synthesizer and performance data will be presented.

Integrated circuit amplifiers for multi-electrode intracortical recording.

PubMed

Jochum, Thomas; Denison, Timothy; Wolf, Patrick

2009-02-01

Significant progress has been made in systems that interpret the electrical signals of the brain in order to control an actuator. One version of these systems senses neuronal extracellular action potentials with an array of up to 100 miniature probes inserted into the cortex. The impedance of each probe is high, so environmental electrical noise is readily coupled to the neuronal signal. To minimize this noise, an amplifier is placed close to each probe. Thus, the need has arisen for many amplifiers to be placed near the cortex. Commercially available integrated circuits do not satisfy the area, power and noise requirements of this application, so researchers have designed custom integrated-circuit amplifiers. This paper presents a comprehensive survey of the neural amplifiers described in publications prior to 2008. Methods to achieve high input impedance, low noise and a large time-constant high-pass filter are reviewed. A tutorial on the biological, electrochemical, mechanical and electromagnetic phenomena that influence amplifier design is provided. Areas for additional research, including sub-nanoampere electrolysis and chronic cortical heating, are discussed. Unresolved design concerns, including teraohm circuitry, electrical overstress and component failure, are identified.

GHz low noise short wavelength infrared (SWIR) photoreceivers

NASA Astrophysics Data System (ADS)

Bai, Xiaogang; Yuan, Ping; McDonald, Paul; Boisvert, Joseph; Chang, James; Woo, Robyn; Labios, Eduardo; Sudharsanan, Rengarajan; Krainak, Michael; Yang, Guangning; Sun, Xiaoli; Lu, Wei; McIntosh, Dion; Zhou, Qiugui; Campbell, Joe

2011-06-01

Next generation LIDAR mapping systems require multiple channels of sensitive photoreceivers that operate in the wavelength region of 1.06 to 1.55 microns, with GHz bandwidth and sensitivity less than 300 fW/√Hz. Spectrolab has been developing high sensitivity photoreceivers using InAlAs impact ionization engineering (I2E) avalanche photodiodes (APDs) structures for this application. APD structures were grown using metal organic vapor epitaxy (MOVPE) and mesa devices were fabricated using these structures. We have achieved low excess noise at high gain in these APD devices; an impact ionization parameter, k, of about 0.15 has been achieved at gains >20 using InAlAs/InGaAlAs as a multiplier layer. Electrical characterization data of these devices show dark current less than 2 nA at a gain of 20 at room temperature; and capacitance of 0.4 pF for a typical 75 micron diameter APD. Photoreceivers were built by integrating I2E APDs with a low noise GHz transimpedance amplifier (TIA). The photoreceivers showed a bandwidth of 1 GHz and a noise equivalent power (NEP) of 150 fW/rt(Hz) at room temperature.

Parametric Amplifier and Oscillator Based on Josephson Junction Circuitry

NASA Astrophysics Data System (ADS)

Yamamoto, T.; Koshino, K.; Nakamura, Y.

While the demand for low-noise amplification is ubiquitous, applications where the quantum-limited noise performance is indispensable are not very common. Microwave parametric amplifiers with near quantum-limited noise performance were first demonstrated more than 20 years ago. However, there had been little effort until recently to improve the performance or the ease of use of these amplifiers, partly because of a lack of any urgent motivation. The emergence of the field of quantum information processing in superconducting systems has changed this situation dramatically. The need to reliably read out the state of a given qubit using a very weak microwave probe within a very short time has led to renewed interest in these quantum-limited microwave amplifiers, which are already widely used as tools in this field. Here, we describe the quantum mechanical theory for one particular parametric amplifier design, called the flux-driven Josephson parametric amplifier, which we developed in 2008. The theory predicts the performance of this parametric amplifier, including its gain, bandwidth, and noise temperature. We also present the phase detection capability of this amplifier when it is operated with a pump power that is above the threshold, i.e., as a parametric phase-locked oscillator or parametron.

A 0.1-1.4 GHz inductorless low-noise amplifier with 13 dBm IIP3 and 24 dBm IIP2 in 180 nm CMOS

NASA Astrophysics Data System (ADS)

Guo, Benqing; Chen, Jun; Chen, Hongpeng; Wang, Xuebing

2018-01-01

An inductorless noise-canceling CMOS low-noise amplifier (LNA) with wideband linearization technique is proposed. The complementary configuration by stacked NMOS/PMOS is employed to compensate second-order nonlinearity of the circuit. The third-order distortion of the auxiliary stage is also mitigated by that of the weak inversion transistors in the main path. The bias and scaling size combined by digital control words are further tuned to obtain enhanced linearity over the desired band. Implemented in a 0.18 μm CMOS process, simulated results show that the proposed LNA provides a voltage gain of 16.1 dB and a NF of 2.8-3.4 dB from 0.1 GHz to 1.4 GHz. The IIP3 and IIP2 of 13-18.9 and 24-40 dBm are obtained, respectively. The circuit core consumes 19 mW from a 1.8 V supply.

Temporal phase mask encrypted optical steganography carried by amplified spontaneous emission noise.

PubMed

Wu, Ben; Wang, Zhenxing; Shastri, Bhavin J; Chang, Matthew P; Frost, Nicholas A; Prucnal, Paul R

2014-01-13

A temporal phase mask encryption method is proposed and experimentally demonstrated to improve the security of the stealth channel in an optical steganography system. The stealth channel is protected in two levels. In the first level, the data is carried by amplified spontaneous emission (ASE) noise, which cannot be detected in either the time domain or spectral domain. In the second level, even if the eavesdropper suspects the existence of the stealth channel, each data bit is covered by a fast changing phase mask. The phase mask code is always combined with the wide band noise from ASE. Without knowing the right phase mask code to recover the stealth data, the eavesdropper can only receive the noise like signal with randomized phase.

Low-noise, transformer-coupled resonant photodetector for squeezed state generation

NASA Astrophysics Data System (ADS)

Chen, Chaoyong; Shi, Shaoping; Zheng, Yaohui

2017-10-01

In an actual setup of squeezed state generation, the stability of a squeezing factor is mainly limited by the performance of the servo-control system, which is mainly influenced by the shot noise and gain of a photodetector. We present a unique transformer-coupled LC resonant amplifier as a photodetector circuit to reduce the electronic noise and increase the gain of the photodetector. As a result, we obtain a low-noise, high gain photodetector with the gain of more than 1.8 ×1 05 V/A, and the input current noise of less than 4.7 pA/√{Hz }. By adjusting the parameters of the transformer, the quality factor Q of the resonant circuit is close to 100 in the frequency range of more than 100 MHz, which meets the requirement for weak power detection in the application of squeezed state generation.

On-wafer, cryogenic characterization of ultra-low noise HEMT devices

NASA Technical Reports Server (NTRS)

Bautista, J. J.; Laskar, J.; Szydlik, P.

1995-01-01

Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.

A fully integrated neural recording amplifier with DC input stabilization.

PubMed

Mohseni, Pedram; Najafi, Khalil

2004-05-01

This paper presents a low-power low-noise fully integrated bandpass operational amplifier for a variety of biomedical neural recording applications. A standard two-stage CMOS amplifier in a closed-loop resistive feedback configuration provides a stable ac gain of 39.3 dB at 1 kHz. A subthreshold PMOS input transistor is utilized to clamp the large and random dc open circuit potentials that normally exist at the electrode-electrolyte interface. The low cutoff frequency of the amplifier is programmable up to 50 Hz, while its high cutoff frequency is measured to be 9.1 kHz. The tolerable dc input range is measured to be at least +/- 0.25 V with a dc rejection factor of at least 29 dB. The amplifier occupies 0.107 mm2 in die area, and dissipates 115 microW from a 3 V power supply. The total measured input-referred noise voltage in the frequency range of 0.1-10 kHz is 7.8 microVrms. It is fabricated using AMI 1.5 microm double-poly double-metal n-well CMOS process. This paper presents full characterization of the dc, ac, and noise performance of this amplifier through in vitro measurements in saline using two different neural recording electrodes.

High-gain cryogenic amplifier assembly employing a commercial CMOS operational amplifier.

PubMed

Proctor, J E; Smith, A W; Jung, T M; Woods, S I

2015-07-01

We have developed a cryogenic amplifier for the measurement of small current signals (10 fA-100 nA) from cryogenic optical detectors. Typically operated with gain near 10(7) V/A, the amplifier performs well from DC to greater than 30 kHz and exhibits noise level near the Johnson limit. Care has been taken in the design and materials to control heat flow and temperatures throughout the entire detector-amplifier assembly. A simple one-board version of the amplifier assembly dissipates 8 mW to our detector cryostat cold stage, and a two-board version can dissipate as little as 17 μW to the detector cold stage. With current noise baseline of about 10 fA/(Hz)(1/2), the cryogenic amplifier is generally useful for cooled infrared detectors, and using blocked impurity band detectors operated at 10 K, the amplifier enables noise power levels of 2.5 fW/(Hz)(1/2) for detection of optical wavelengths near 10 μm.

Satellite Communications Technology Database. Part 2

NASA Technical Reports Server (NTRS)

2001-01-01

The Satellite Communications Technology Database is a compilation of data on state-of-the-art Ka-band technologies current as of January 2000. Most U.S. organizations have not published much of their Ka-band technology data, and so the great majority of this data is drawn largely from Japanese, European, and Canadian publications and Web sites. The data covers antennas, high power amplifiers, low noise amplifiers, MMIC devices, microwave/IF switch matrices, SAW devices, ASIC devices, power and data storage. The data herein is raw, and is often presented simply as the download of a table or figure from a site, showing specified technical characteristics, with no further explanation.

Terahertz MMICs and Antenna-in-Package Technology at 300 GHz for KIOSK Download System

NASA Astrophysics Data System (ADS)

Tajima, Takuro; Kosugi, Toshihiko; Song, Ho-Jin; Hamada, Hiroshi; El Moutaouakil, Amine; Sugiyama, Hiroki; Matsuzaki, Hideaki; Yaita, Makoto; Kagami, Osamu

2016-12-01

Toward the realization of ultra-fast wireless communications systems, the inherent broad bandwidth of the terahertz (THz) band is attracting attention, especially for short-range instant download applications. In this paper, we present our recent progress on InP-based THz MMICs and packaging techniques based on low-temperature co-fibered ceramic (LTCC) technology. The transmitter MMICs are based on 80-nm InP-based high electron mobility transistors (HEMTs). Using the transmitter packaged in an E-plane split-block waveguide and compact lens receiver packaged in LTCC multilayered substrates, we tested wireless data transmission up to 27 Gbps with the simple amplitude key shifting (ASK) modulation scheme. We also present several THz antenna-in-packaging solutions based on substrate integrated waveguide (SIW) technology. A vertical hollow (VH) SIW was applied to a compact medium-gain SIW antenna and low-loss interconnection integrated in LTCC multi-layer substrates. The size of the LTCC antennas with 15-dBi gain is less than 0.1 cm3. For feeding the antenna, we investigated an LTCC-integrated transition and polyimide transition to LTCC VH SIWs. These transitions exhibit around 1-dB estimated loss at 300 GHz and more than 35 GHz bandwidth with 10-dB return loss. The proposed package solutions make antennas and interconnections easy to integrate in a compact LTCC package with an MMIC chip for practical applications.

De-embedding technique for accurate modeling of compact 3D MMIC CPW transmission lines

NASA Astrophysics Data System (ADS)

Pohan, U. H.; KKyabaggu, P. B.; Sinulingga, E. P.

2018-02-01

Requirement for high-density and high-functionality microwave and millimeter-wave circuits have led to the innovative circuit architectures such as three-dimensional multilayer MMICs. The major advantage of the multilayer techniques is that one can employ passive and active components based on CPW technology. In this work, MMIC Coplanar Waveguide(CPW)components such as Transmission Line (TL) are modeled in their 3D layouts. Main characteristics of CPWTL suffered from the probe pads’ parasitic and resonant frequency effects have been studied. By understanding the parasitic effects, then the novel de-embedding technique are developed accurately in order to predict high frequency characteristics of the designed MMICs. The novel de-embedding technique has shown to be critical in reducing the probe pad parasitic significantly from the model. As results, high frequency characteristics of the designed MMICs have been presented with minimumparasitic effects of the probe pads. The de-embedding process optimises the determination of main characteristics of Compact 3D MMIC CPW transmission lines.

Design issues of a low cost lock-in amplifier readout circuit for an infrared detector

NASA Astrophysics Data System (ADS)

Scheepers, L.; Schoeman, J.

2014-06-01

In the past, high resolution thermal sensors required expensive cooling techniques making the early thermal imagers expensive to operate and cumbersome to transport, limiting them mainly to military applications. However, the introduction of uncooled microbolometers has overcome many of earlier problems and now shows great potential for commercial optoelectric applications. The structure of uncooled microbolometer sensors, especially their smaller size, makes them attractive in low cost commercial applications requiring high production numbers with relatively low performance requirements. However, the biasing requirements of these microbolometers cause these sensors to generate a substantial amount of noise on the output measurements due to self-heating. Different techniques to reduce this noise component have been attempted, such as pulsed biasing currents and the use of blind bolometers as common mode reference. These techniques proved to either limit the performance of the microbolometer or increase the cost of their implementation. The development of a low cost lock-in amplifier provides a readout technique to potentially overcome these challenges. High performance commercial lock-in amplifiers are very expensive. Using this as a readout circuit for a microbolometer will take away from the low manufacturing cost of the detector array. Thus, the purpose of this work was to develop a low cost readout circuit using the technique of phase sensitive detection and customizing this as a readout circuit for microbolometers. The hardware and software of the readout circuit was designed and tested for improvement of the signal-to-noise ratio (SNR) of the microbolometer signal. An optical modulation system was also developed in order to effectively identify the desired signal from the noise with the use of the readout circuit. A data acquisition and graphical user interface sub system was added in order to display the signal recovered by the readout circuit. The readout

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Ali, Mayahsa M.; Haris, Norshakila; Kyabaggu, Peter B. K.; Rezazadeh, Ali A.

2017-05-01

This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects of the presence of 3D components above the active layer were accomplished by means of capacitance-voltage measurement, on-wafer DC and S-parameter measurements and two-tone intermodulation distortion measurement. The barrier height, donor concentration in the barrier layer, existing two-dimensional electron gas, output current, off and on state leakage, transconductance, cut-off frequency, small signal model parameters, gain, minimum noise figures and nonlinear distortion behavior reveals no significant performance degradation. Furthermore the fundamental device properties such as the depletion depth d, the sheet charge densities of the 2-DEG, n s, filed dependent mobility, μ, and the effective carrier velocity, v eff is not much affected due to multilayer processing. Less than 5% changes in magnitude of the device parameters are realized between the pre and post fabricated multilayer 3D MMIC technology. These effective comparisons of the both device are useful for future designs and optimizations of multilayer vertical stacked 3D MMICs.

Signal processing and electronic noise in LZ

NASA Astrophysics Data System (ADS)

Khaitan, D.

2016-03-01

The electronics of the LUX-ZEPLIN (LZ) experiment, the 10-tonne dark matter detector to be installed at the Sanford Underground Research Facility (SURF), consists of low-noise dual-gain amplifiers and a 100-MHz, 14-bit data acquisition system for the TPC PMTs. Pre-prototypes of the analog amplifiers and the 32-channel digitizers were tested extensively with simulated pulses that are similar to the prompt scintillation light and the electroluminescence signals expected in LZ. These studies are used to characterize the noise and to measure the linearity of the system. By increasing the amplitude of the test signals, the effect of saturating the amplifier and the digitizers was studied. The RMS ADC noise of the digitizer channels was measured to be 1.19± 0.01 ADCC. When a high-energy channel of the amplifier is connected to the digitizer, the measured noise remained virtually unchanged, while the noise added by a low-energy channel was estimated to be 0.38 ± 0.02 ADCC (46 ± 2 μV). A test facility is under construction to study saturation, mitigate noise and measure the performance of the LZ electronics and data acquisition chain.

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers

PubMed Central

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-01-01

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/Hz at 50 kHz, which corresponds to 100 μg/Hz. PMID:28042830

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers.

PubMed

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-12-30

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

General technique for the integration of MIC/MMIC'S with waveguides

NASA Technical Reports Server (NTRS)

Geller, Bernard D. (Inventor); Zaghloul, Amir I. (Inventor)

1987-01-01

A technique for packaging and integrating of a microwave integrated circuit (MIC) or monolithic microwave integrated circuit (MMIC) with a waveguide uses a printed conductive circuit pattern on a dielectric substrate to transform impedance and mode of propagation between the MIC/MMIC and the waveguide. The virtually coplanar circuit pattern lies on an equipotential surface within the waveguide and therefore makes possible single or dual polarized mode structures.

A W-Band MMIC Radar System for Remote Detection of Vital Signs

NASA Astrophysics Data System (ADS)

Diebold, Sebastian; Ayhan, Serdal; Scherr, Steffen; Massler, Hermann; Tessmann, Axel; Leuther, Arnulf; Ambacher, Oliver; Zwick, Thomas; Kallfass, Ingmar

2012-12-01

In medical and personal health systems for vital sign monitoring, contact-free remote detection is favourable compared to wired solutions. For example, they help to avoid severe pain, which is involved when a patient with burned skin has to be examined. Continuous wave (CW) radar systems have proven to be good candidates for this purpose. In this paper a monolithic millimetre-wave integrated circuit (MMIC) based CW radar system operating in the W-band (75-110 GHz) at 96 GHz is presented. The MMIC components are custom-built and make use of 100 nm metamorphic high electron mobility transistors (mHEMTs). The radar system is employing a frequency multiplier-by-twelve MMIC and a receiver MMIC both packaged in split-block modules. They allow for the determination of respiration and heartbeat frequency of a human target sitting in 1 m distance. The analysis of the measured data is carried out in time and frequency domain and each approach is shown to have its advantages and drawbacks.

A 32-GHz solid-state power amplifier for deep space communications

NASA Technical Reports Server (NTRS)

Wamhof, P. D.; Rascoe, D. L.; Lee, K. A.; Lansing, F. S.

1994-01-01

A 1.5-W solid-state power amplifier (SSPA) has been demonstrated as part of an effort to develop and evaluate state-of-the-art transmitter and receiver components at 32 and 35 GHz for future deep space missions. Output power and efficiency measurements for a monolithic millimeter-wave integrated circuit (MMIC)-based SSPA are reported. Technical design details for the various modules and a thermal analysis are discussed, as well as future plans.

A low-power CMOS operational amplifier IC for a heterogeneous paper-based potentiostat

NASA Astrophysics Data System (ADS)

Bezuidenhout, P.; Land, K.; Joubert, T.-H.

2016-02-01

Electrochemical biosensing is used to detect specific analytes in fluids, such as bacterial and chemical contaminants. A common implementation of an electrochemical readout is a potentiostat, which usually includes potentiometric, amperometric, and impedimetric detection. Recently several researchers have developed small, low-cost, single-chip silicon-based potentiostats. With the advances in heterogeneous integration technology, low-power potentiostats can be implemented on paper and similar low cost substrates. This paper deals with the design of a low-power paper-based amperometric front-end for a low-cost and rapid detection environment. In amperometric detection a voltage signal is provided to a sensor system, while a small current value generated by an electrochemical redox reaction in the system is measured. In order to measure low current values, the noise of the circuit must be minimized, which is accomplished with a pre-amplification front-end stage, typically designed around an operational amplifier core. An appropriate circuit design for a low-power and low-cost amperometric front-end is identified, taking the heterogeneous integration of various components into account. The operational amplifier core is on a bare custom CMOS chip, which will be integrated onto the paper substrate alongside commercial off-the-shelf electronic components. A general-purpose low-power two-stage CMOS amplifier circuit is designed and simulated for the ams 350 nm 5 V process. After the layout design and verification, the IC was submitted for a multi-project wafer manufacturing run. The simulated results are a bandwidth of 2.4 MHz, a common-mode rejection ratio of 70.04 dB, and power dissipation of 0.154 mW, which are comparable with the analytical values.

A low power low noise analog front end for portable healthcare system

NASA Astrophysics Data System (ADS)

Yanchao, Wang; Keren, Ke; Wenhui, Qin; Yajie, Qin; Ting, Yi; Zhiliang, Hong

2015-10-01

The presented analog front end (AFE) used to process human bio-signals consists of chopping instrument amplifier (IA), chopping spikes filter and programmable gain and bandwidth amplifier. The capacitor-coupling input of AFE can reject the DC electrode offset. The power consumption of current-feedback based IA is reduced by adopting capacitor divider in the input and feedback network. Besides, IA's input thermal noise is decreased by utilizing complementary CMOS input pairs which can offer higher transconductance. Fabricated in Global Foundry 0.35 μm CMOS technology, the chip consumes 3.96 μA from 3.3 V supply. The measured input noise is 0.85 μVrms (0.5-100 Hz) and the achieved noise efficient factor is 6.48. Project supported by the Science and Technology Commission of Shanghai Municipality (No. 13511501100), the State Key Laboratory Project of China (No. 11MS002), and the State Key Laboratory of ASIC & System, Fudan University.

180-GHz I-Q Second Harmonic Resistive Mixer MMIC

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka P.; Lai, Richard; Mei, Xiaobing

2010-01-01

An indium phosphide MMIC (monolithic microwave integrated circuit) mixer was developed, processed, and tested in the NGC 35-nm-gate-length HEMT (high electron mobility transistor) process. This innovation is very compact in size and operates with very low LO power. Because it is a resistive mixer, this innovation does not require DC power. This is an enabling technology for the miniature receiver modules for the GeoSTAR instrument, which is the only viable option for the NRC decadal study mission PATH.

Microwave cryogenic thermal-noise standards

NASA Technical Reports Server (NTRS)

Stelzried, C. T.

1971-01-01

Field operational waveguide noise standard with nominal noise temperature of 78.09 plus/minus 0.12 deg K is calibrated more precisely than before. Calibration technique applies to various disciplines such as microwave radiometry, antenna temperature and loss measurement, and low-noise amplifier performance evaluation.

GaAs MMIC: recovery from upset by x-ray pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armendariz, M.G.; Castle, J.G. Jr.

1986-01-01

Tolerance for fast neutrons and total ionizing dose is a feature of GaAs microwave monolithic integrated circuits (MMIC). However, upset during an ionizing pulse is expected to occur and delayed recovery due to backgating may be a problem. The purpose of this study of an experimental MMIC design is to observe the recovery of oscillator power output following upset by a short ionizing pulse as a function of applied bias, dose per pulse and case temperature.

Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

NASA Astrophysics Data System (ADS)

Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

1986-01-01

A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

Electrometer Amplifier With Overload Protection

NASA Technical Reports Server (NTRS)

Woeller, F. H.; Alexander, R.

1986-01-01

Circuit features low noise, input offset, and high linearity. Input preamplifier includes input-overload protection and nulling circuit to subtract dc offset from output. Prototype dc amplifier designed for use with ion detector has features desirable in general laboratory and field instrumentation.

Bandwidth tunable amplifier for recording biopotential signals.

PubMed

Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

2010-01-01

This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

Development of a HgCdTe photomixer and impedance matched GaAs FET amplifier

NASA Technical Reports Server (NTRS)

Shanley, J. F.; Paulauskas, W. A.; Taylor, D. R.

1982-01-01

A research program for the development of a 10.6 micron HgCdTe photodiode/GaAs field effect transistor amplifier package for use at cryogenic temperatures (77k). The photodiode/amplifier module achieved a noise equivalent power per unit bandwidth of 5.7 times 10 to the 20th power W/Hz at 2.0 GHz. The heterodyne sensitivity of the HgCdTe photodiode was improved by designing and building a low noise GaAs field effect transistor amplifier operating at 77K. The Johnson noise of the amplifier was reduced at 77K, and thus resulted in an increased photodiode heterodyne sensitivity.

Cryogenic ultra-low power dissipation operational amplifiers with GaAs JFETs

NASA Astrophysics Data System (ADS)

Hibi, Yasunori; Matsuo, Hiroshi; Ikeda, Hirokazu; Fujiwara, Mikio; Kang, Lin; Chen, Jian; Wu, Peiheng

2016-01-01

To realize a multipixel camera for astronomical observation, we developed cryogenic multi-channel readout systems using gallium arsenide junction field-effect transistor (GaAs JFET) integrated circuits (ICs). Based on our experience with these cryogenic ICs, we designed, manufactured, and demonstrated operational amplifiers requiring four power supplies and two voltage sources. The amplifiers operate at 4.2 K with an open-loop gain of 2000. The gain-bandwidth product can expect 400 kHz at a power dissipation of 6 μW. In performance evaluations, the input-referred voltage noise was 4 μVrms/Hz0.5 at 1 Hz and 30 nVrms/Hz0.5 at 10 kHz, respectively. The noise power spectrum density was of type 1/f and extended to 10 kHz.

Quantum information tapping using a fiber optical parametric amplifier with noise figure improved by correlated inputs.

PubMed

Guo, Xueshi; Li, Xiaoying; Liu, Nannan; Ou, Z Y

2016-07-26

One of the important functions in a communication network is the distribution of information. It is not a problem to accomplish this in a classical system since classical information can be copied at will. However, challenges arise in quantum system because extra quantum noise is often added when the information content of a quantum state is distributed to various users. Here, we experimentally demonstrate a quantum information tap by using a fiber optical parametric amplifier (FOPA) with correlated inputs, whose noise is reduced by the destructive quantum interference through quantum entanglement between the signal and the idler input fields. By measuring the noise figure of the FOPA and comparing with a regular FOPA, we observe an improvement of 0.7 ± 0.1 dB and 0.84 ± 0.09 dB from the signal and idler outputs, respectively. When the low noise FOPA functions as an information splitter, the device has a total information transfer coefficient of Ts+Ti = 1.5 ± 0.2, which is greater than the classical limit of 1. Moreover, this fiber based device works at the 1550 nm telecom band, so it is compatible with the current fiber-optical network for quantum information distribution.

Monolithic Microwave Integrated Circuit (MMIC) Phased Array Demonstrated With ACTS

NASA Technical Reports Server (NTRS)

1996-01-01

Monolithic Microwave Integrated Circuit (MMIC) arrays developed by the NASA Lewis Research Center and the Air Force Rome Laboratory were demonstrated in aeronautical terminals and in mobile or fixed Earth terminals linked with NASA's Advanced Communications Technology Satellite (ACTS). Four K/Ka-band experimental arrays were demonstrated between May 1994 and May 1995. Each array had GaAs MMIC devices at each radiating element for electronic beam steering and distributed power amplification. The 30-GHz transmit array used in uplinks to ACTS was developed by Lewis and Texas Instruments. The three 20-GHz receive arrays used in downlinks from ACTS were developed in cooperation with the Air Force Rome Laboratory, taking advantage of existing Air Force integrated-circuit, active-phased-array development contracts with the Boeing Company and Lockheed Martin Corporation. Four demonstrations, each related to an application of high interest to both commercial and Department of Defense organizations, were conducted. The location, type of link, and the data rate achieved for each of the applications is shown. In one demonstration-- an aeronautical terminal experiment called AERO-X--a duplex voice link between an aeronautical terminal on the Lewis Learjet and ACTS was achieved. Two others demonstrated duplex voice links (and in one case, interactive video links as well) between ACTS and an Army high-mobility, multipurpose wheeled vehicle (HMMWV, or "humvee"). In the fourth demonstration, the array was on a fixed mount and was electronically steered toward ACTS. Lewis served as project manager for all demonstrations and as overall system integrator. Lewis engineers developed the array system including a controller for open-loop tracking of ACTS during flight and HMMWV motion, as well as a laptop data display and recording system used in all demonstrations. The Jet Propulsion Laboratory supported the AERO-X program, providing elements of the ACTS Mobile Terminal. The successful

Note: Expanding the bandwidth of the ultra-low current amplifier using an artificial negative capacitor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Kai, E-mail: kaixie@mail.xidian.edu.cn; Liu, Yan; Li, XiaoPing

2016-04-15

The bandwidth and low noise characteristics are often contradictory in ultra-low current amplifier, because an inevitable parasitic capacitance is paralleled with the high value feedback resistor. In order to expand the amplifier’s bandwidth, a novel approach was proposed by introducing an artificial negative capacitor to cancel the parasitic capacitance. The theory of the negative capacitance and the performance of the improved amplifier circuit with the negative capacitor are presented in this manuscript. The test was conducted by modifying an ultra-low current amplifier with a trans-impedance gain of 50 GΩ. The results show that the maximum bandwidth was expanded from 18.7more » Hz to 3.3 kHz with more than 150 times of increase when the parasitic capacitance (∼0.17 pF) was cancelled. Meanwhile, the rise time decreased from 18.7 ms to 0.26 ms with no overshot. Any desired bandwidth or rise time within these ranges can be obtained by adjusting the ratio of cancellation of the parasitic and negative capacitance. This approach is especially suitable for the demand of rapid response to weak current, such as transient ion-beam detector, mass spectrometry analysis, and fast scanning microscope.« less

Integrating amplifiers using cooled JFETs

NASA Technical Reports Server (NTRS)

Low, F. J.

1984-01-01

It is shown how a simple integrating amplifier based on commercially available JFET and MOSFET switches can be used to measure photocurrents from detectors with noise levels as low as 1.6 x 10 to the -18th A/root Hz (10 electrons/sec). A figure shows the basic circuit, along with the waveform at the output. The readout is completely nondestructive; the reset noise does not contribute since sampling of the accumulated charge occurs between resets which are required only when the stored charge has reached a very high level. The storage capacity ranges from 10 to the 6th to 10 to the 9th electrons, depending on detector parameters and linearity requirements. Data taken with an Si:Sb detector operated at 24 microns are presented. The responsivity agrees well with the value obtained by Young et al. (1981) in the transimpedance amplifier circuit. The data are seen as indicating that extremely low values of NEP can be obtained for integration times of 1 sec and that longer integrations continue to improve the SNR at a rate faster than the square root of time when background noise is not present.

Low-power G m-C filter employing current-reuse differential difference amplifiers

DOE PAGES

Mincey, John S.; Briseno-Vidrios, Carlos; Silva-Martinez, Jose; ...

2016-08-10

This study deals with the design of low-power, high performance, continuous-time filters. The proposed OTA architecture employs current-reuse differential difference amplifiers in order to produce more power efficient Gm-C filter solutions. To demonstrate this, a 6th order low-pass Butterworth filter was designed in 0.18 m CMOS achieving a 65-MHz -3-dB frequency, an in-band input-referred third-order intercept point of 12.0 dBm, and an input referred noise density of 40 nV/Hz1=2, while only consuming 8.07 mW from a 1.8 V supply and occupying a total chip area of 0.21 mm2 with a power consumption of only 1.19 mW per pole.

Low-power G m-C filter employing current-reuse differential difference amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mincey, John S.; Briseno-Vidrios, Carlos; Silva-Martinez, Jose

This study deals with the design of low-power, high performance, continuous-time filters. The proposed OTA architecture employs current-reuse differential difference amplifiers in order to produce more power efficient Gm-C filter solutions. To demonstrate this, a 6th order low-pass Butterworth filter was designed in 0.18 m CMOS achieving a 65-MHz -3-dB frequency, an in-band input-referred third-order intercept point of 12.0 dBm, and an input referred noise density of 40 nV/Hz1=2, while only consuming 8.07 mW from a 1.8 V supply and occupying a total chip area of 0.21 mm2 with a power consumption of only 1.19 mW per pole.

Low cost high efficiency GaAs monolithic RF module for SARSAT distress beacons

NASA Technical Reports Server (NTRS)

Petersen, W. C.; Siu, D. P.; Cook, H. F.

1991-01-01

Low cost high performance (5 Watts output) 406 MHz beacons are urgently needed to realize the maximum utilization of the Search and Rescue Satellite-Aided Tracking (SARSAT) system spearheaded in the U.S. by NASA. Although current technology can produce beacons meeting the output power requirement, power consumption is high due to the low efficiency of available transmitters. Field performance is currently unsatisfactory due to the lack of safe and reliable high density batteries capable of operation at -40 C. Low cost production is also a crucial but elusive requirement for the ultimate wide scale utilization of this system. Microwave Monolithics Incorporated (MMInc.) has proposed to make both the technical and cost goals for the SARSAT beacon attainable by developing a monolithic GaAs chip set for the RF module. This chip set consists of a high efficiency power amplifier and a bi-phase modulator. In addition to implementing the RF module in Monolithic Microwave Integrated Circuit (MMIC) form to minimize ultimate production costs, the power amplifier has a power-added efficiency nearly twice that attained with current commercial technology. A distress beacon built using this RF module chip set will be significantly smaller in size and lighter in weight due to a smaller battery requirement, since the 406 MHz signal source and the digital controller have far lower power consumption compared to the 5 watt power amplifier. All the program tasks have been successfully completed. The GaAs MMIC RF module chip set has been designed to be compatible with the present 406 MHz signal source and digital controller. A complete high performance low cost SARSAT beacon can be realized with only additional minor iteration and systems integration.

Designing an Inverter-based Operational Transconductance Amplifier-capacitor Filter with Low Power Consumption for Biomedical Applications

PubMed Central

Yousefinezhad, Sajad; Kermani, Saeed; Hosseinnia, Saeed

2018-01-01

The operational transconductance amplifier-capacitor (OTA-C) filter is one of the best structures for implementing continuous-time filters. It is particularly important to design a universal OTA-C filter capable of generating the desired filter response via a single structure, thus reducing the filter circuit power consumption as well as noise and the occupied space on the electronic chip. In this study, an inverter-based universal OTA-C filter with very low power consumption and acceptable noise was designed with applications in bioelectric and biomedical equipment for recording biomedical signals. The very low power consumption of the proposed filter was achieved through introducing bias in subthreshold MOSFET transistors. The proposed filter is also capable of simultaneously receiving favorable low-, band-, and high-pass filter responses. The performance of the proposed filter was simulated and analyzed via HSPICE software (level 49) and 180 nm complementary metal-oxide-semiconductor technology. The rate of power consumption and noise obtained from simulations are 7.1 nW and 10.18 nA, respectively, so this filter has reduced noise as well as power consumption. The proposed universal OTA-C filter was designed based on the minimum number of transconductance blocks and an inverter circuit by three transconductance blocks (OTA). PMID:29535925

Designing an Inverter-based Operational Transconductance Amplifier-capacitor Filter with Low Power Consumption for Biomedical Applications.

PubMed

Yousefinezhad, Sajad; Kermani, Saeed; Hosseinnia, Saeed

2018-01-01

The operational transconductance amplifier-capacitor (OTA-C) filter is one of the best structures for implementing continuous-time filters. It is particularly important to design a universal OTA-C filter capable of generating the desired filter response via a single structure, thus reducing the filter circuit power consumption as well as noise and the occupied space on the electronic chip. In this study, an inverter-based universal OTA-C filter with very low power consumption and acceptable noise was designed with applications in bioelectric and biomedical equipment for recording biomedical signals. The very low power consumption of the proposed filter was achieved through introducing bias in subthreshold MOSFET transistors. The proposed filter is also capable of simultaneously receiving favorable low-, band-, and high-pass filter responses. The performance of the proposed filter was simulated and analyzed via HSPICE software (level 49) and 180 nm complementary metal-oxide-semiconductor technology. The rate of power consumption and noise obtained from simulations are 7.1 nW and 10.18 nA, respectively, so this filter has reduced noise as well as power consumption. The proposed universal OTA-C filter was designed based on the minimum number of transconductance blocks and an inverter circuit by three transconductance blocks (OTA).

Low-noise analog readout channel for SDD in X-ray spectrometry

NASA Astrophysics Data System (ADS)

Atkin, E.; Gusev, A.; Krivchenko, A.; Levin, V.; Malankin, E.; Normanov, D.; Rotin, A.; Sagdiev, I.; Samsonov, V.

2016-01-01

A low-noise analog readout channel optimized for operation with the Silicon Drift Detectors (SDDs) with built-in JFET is presented. The Charge Sensitive Amplifier (CSA) operates in a pulse reset mode using the reset diode built-in the SDD detector. The shaper is a 6th order semi-Gaussian filter with switchable discrete shaping times. The readout channel provides the Equivalent Noise Charge (ENC) of 12e- (simulation) and input dynamic range of 30 keV . The measured energy resolution at the 5,89 keV line of a 55Fe X-ray source is 336 eV (FWHM). The channel was prototyped via Europractice in the AMS 350 nm process as miniASIC. The simulation and first measurement results are presented in the paper.

X-Band, 17-Watt Solid-State Power Amplifier

NASA Technical Reports Server (NTRS)

Mittskus, Anthony; Stone, Ernest; Boger, William; Burgess, David; Honda, Richard; Nuckolls, Carl

2005-01-01

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

SQUID-based current sensing noise thermometry for quantum resistors at dilution refrigerator temperatures

NASA Astrophysics Data System (ADS)

Kleinbaum, Ethan; Shingla, Vidhi; Csáthy, G. A.

2017-03-01

We present a dc Superconducting QUantum Interference Device (SQUID)-based current amplifier with an estimated input referred noise of only 2.3 fA/√{Hz}. Because of such a low amplifier noise, the circuit is useful for Johnson noise thermometry of quantum resistors in the kΩ range down to mK temperatures. In particular, we demonstrate that our circuit does not contribute appreciable noise to the Johnson noise of a 3.25 kΩ resistor down to 16 mK. Our circuit is a useful alternative to the commonly used High Electron Mobility Transistor-based amplifiers, but in contrast to the latter, it offers a much reduced 1/f noise. In comparison to SQUIDs interfaced with cryogenic current comparators, our circuit has similar low noise levels, but it is easier to build and to shield from magnetic pickup.

Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

NASA Technical Reports Server (NTRS)

Fung, King Man; Ward, John; Chattopadhyay, Goutam; Lin, Robert H.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Mehdi, Imran; Lambrigtsen, Bjorn H.; Goldsmith, Paul F.; Soria, Mary M.;

Noise effect on performance of IR PVDF pyroelectric detector

NASA Astrophysics Data System (ADS)

Abdullah, K. Al; Batal, M. Anwar; Hamdan, Rawad; Khalil, Toni; Salame, Chafic

2018-05-01

The spin-casting and casting technology were used to make IR pyroelectric PVDF detectors, where the operational amplifier, TC75S63TU, is used to amplify pyroelectrical signal. The pyroelectric coefficient is measured by charge integration method, which is 23 µC/m2K. The voltage responsivity and noise equivalent power depending on the dielectric constant, specific conductivity and loss tangent, which are measured at various frequencies, is estimated where changing of detector capacitance and resistor with frequency is taken into account. Maximum voltage responsivity was for detector thickness d=116.05 µm at chopping frequency (f=0.8Hz). Influence of thermal, Johnson and amplifier noises on output voltage are studied. At frequencies (<1kHz), Johnson noise dominates whereas at frequencies (>1kHz), amplifier voltage noise dominates. The thinner detector, the lower noise affects on output voltage. The optimal signal to noise ratio (SNR) of pyroelectrical detector is for thickness d=30.1 µm at frequency f=20Hz. The reducing electrode area decreases slightly total noise at low frequency and enhances slightly SNR of pyroelectrical detector.

The Noise Level Optimization for Induction Magnetometer of SEP System

NASA Astrophysics Data System (ADS)

Zhu, W.; Fang, G.

2011-12-01

The Surface Electromagnetic Penetration (SEP) System, subsidized by the SinoProbe Plan in China, is designed for 3D conductivity imaging in geophysical mineral exploration, underground water distribution exploration, oil and gas reservoir exploration. Both the Controlled Source Audio Magnetotellurics (CSAMT) method and Magnetotellurics (MT) method can be surveyed by SEP system. In this article, an optimization design is introduced, which can minimize the noise level of the induction magnetometer for SEP system magnetic field's acquisition. The induction magnetometer transfers the rate of the magnetic field's change to voltage signal by induction coil, and amplified it by Low Noise Amplifier The noise parts contributed to the magnetometer are: the coil's thermal noise, the equivalent input voltage and current noise of the pre-amplifier. The coil's thermal noise is decided by coil's DC resistance. The equivalent input voltage and current noise of the pre-amplifier depend on the amplifier's type and DC operation condition. The design here optimized the DC operation point of pre-amplifier, adjusted the DC current source, and realized the minimum of total noise level of magnetometer. The calculation and test results show that: the total noise is about 1pT/√Hz, the thermal noise of coils is 1.7nV/√Hz, the preamplifier equivalent input voltage and current noise is 3nV/ √Hz and 0.1pA/√Hz, the weight of the magnetometer is 4.5kg and meet the requirement of SEP system.

Ku and K band GaN High Power Amplifier MMICs

DTIC Science & Technology

2017-03-20

end Ku-band HPA operates from 13 to 14.5 GHz and delivers 48 Watts of output power with 43% PAE. A high-end Ku-band HPA operates from 15.5 to 18 GHz and...delivers 25 Watts of output power with 45% PAE. A K-band HPA operates from 19.5 to 22 GHz and delivers 18 Watts of output power with 29% PAE...15.5 and 18 GHz. The circuit is a three-stage reactively-matched amplifier. A photograph of a fabricated high-end Ku-band GaN HPA is shown as an

Low-Cost Tracking Ground Terminal Designed to Use Cryogenically Cooled Electronics

NASA Technical Reports Server (NTRS)

Wald, Lawrence W.; Romanofsky, Robert R.; Warner, Joseph D.

2000-01-01

A computer-controlled, tracking ground terminal will be assembled at the NASA Glenn Research Center at Lewis Field to receive signals transmitted by the Glenn's Direct Data Distribution (D3) payload planned for a shuttle flight in low Earth orbit. The terminal will enable direct data reception of up to two 622-megabits-per-second (Mbps) beams from the space-based, K-band (19.05-GHz) transmitting array at an end-user bit error rate of up to 10(exp -12). The ground terminal will include a 0.9-m-diameter receive-only Cassegrain reflector antenna with a corrugated feed horn incorporating a dual circularly polarized, K-band feed assembly mounted on a multiaxis, gimbaled tracking pedestal as well as electronics to receive the downlink signals. The tracking system will acquire and automatically track the shuttle through the sky for all elevations greater than 20 above the horizon. The receiving electronics for the ground terminal consist of a six-pole microstrip bandpass filter, a three-stage monolithic microwave integrated circuit (MMIC) amplifier, and a Stirling cycle cryocooler (1 W at 80 K). The Sterling cycle cryocooler cools the front end of the receiver, also known as the low-noise amplifier (LNA), to about 77 K. Cryocooling the LNA significantly increases receiver performance, which is necessary so that it can use the antenna, which has an aperture of only 0.9 m. The following drawing illustrates the cryoterminal.

Flat supercontinuum generation pumped by amplified noise-like pulses from a figure-eight erbium-doped fiber laser

NASA Astrophysics Data System (ADS)

Hernández-Escobar, E.; Bello-Jiménez, M.; Pottiez, O.; Ibarra-Escamilla, B.; López-Estopier, R.; Durán-Sánchez, M.; Kuzin, E. A.; Andrés, M. V.

2017-10-01

The conditions to obtain noise-like pulses (NLPs) from a figure-eight fiber laser (F8L) and their application for supercontinuum (SC) generation in the anomalous dispersion regime are reported. The F8L is designed to remove the undesired low-intensity background radiation from pulse emission, generating NLPs with a 3 dB spectral bandwidth of 17.43 nm at the fundamental repetition frequency of 0.8 MHz. After amplification, NLPs reach a maximum average power of 9.2 mW and 123.32 nm spectral bandwidth. By controlling the amplifier pump power, flat SC generation is demonstrated through both a 800 m long spool of SMF-28 fiber and a piece of 5 m long highly nonlinear optical fiber. The results demonstrate a satisfactory flatness of ~3 dB over a bandwidth of ~1000 nm in the range from 1261 to 2261 nm, achieving to the best of our knowledge, one of the flattest SC generated from noise-like pulses.

A parallel input composite transimpedance amplifier.

PubMed

Kim, D J; Kim, C

2018-01-01

A new approach to high performance current to voltage preamplifier design is presented. The design using multiple operational amplifiers (op-amps) has a parasitic capacitance compensation network and a composite amplifier topology for fast, precision, and low noise performance. The input stage consisting of a parallel linked JFET op-amps and a high-speed bipolar junction transistor (BJT) gain stage driving the output in the composite amplifier topology, cooperating with the capacitance compensation feedback network, ensures wide bandwidth stability in the presence of input capacitance above 40 nF. The design is ideal for any two-probe measurement, including high impedance transport and scanning tunneling microscopy measurements.

A parallel input composite transimpedance amplifier

NASA Astrophysics Data System (ADS)

Kim, D. J.; Kim, C.

2018-01-01

A new approach to high performance current to voltage preamplifier design is presented. The design using multiple operational amplifiers (op-amps) has a parasitic capacitance compensation network and a composite amplifier topology for fast, precision, and low noise performance. The input stage consisting of a parallel linked JFET op-amps and a high-speed bipolar junction transistor (BJT) gain stage driving the output in the composite amplifier topology, cooperating with the capacitance compensation feedback network, ensures wide bandwidth stability in the presence of input capacitance above 40 nF. The design is ideal for any two-probe measurement, including high impedance transport and scanning tunneling microscopy measurements.

Design of a lock-amplifier circuit

NASA Astrophysics Data System (ADS)

Liu, H.; Huang, W. J.; Song, X.; Zhang, W. Y.; Sa, L. B.

2017-01-01

The lock-in amplifier is recovered by phase sensitive detection technique for the weak signal submerged in the noise background. This design is based on the TI ultra low power LM358, INA129, OPA227, OP07 and other chips as the core design and production of the lock-in amplifier. Signal generator by 10m ohms /1K ohm resistance points pressure network 10 mu V 1mV adjustable sine wave signal s (T). The concomitant interference signal together through the AC amplifier and band-pass filter signal x (T), on the other hand reference signal R (T) driven by square wave phase shift etc. steps to get the signal R (T), two signals and by phase sensitive detector are a DC full wave, again through its low pass filter and a DC amplifier to be measured signal more accurate detection, the final circuit through the AD conversion and the use of single-chip will display the output.

Low frequency noise study.

DOT National Transportation Integrated Search

2007-04-01

This report documents a study to investigate human response to the low-frequency : content of aviation noise, or low-frequency noise (LFN). The study comprised field : measurements and laboratory studies. The major findings were: : 1. Start-of-takeof...

Improving the signal-to-noise ratio in ultrasound-modulated optical tomography by a lock-in amplifier

NASA Astrophysics Data System (ADS)

Zhu, Lili; Wu, Jingping; Lin, Guimin; Hu, Liangjun; Li, Hui

2016-10-01

With high spatial resolution of ultrasonic location and high sensitivity of optical detection, ultrasound-modulated optical tomography (UOT) is a promising noninvasive biological tissue imaging technology. In biological tissue, the ultrasound-modulated light signals are very weak and are overwhelmed by the strong unmodulated light signals. It is a difficulty and key to efficiently pick out the weak modulated light from strong unmodulated light in UOT. Under the effect of an ultrasonic field, the scattering light intensity presents a periodic variation as the ultrasonic frequency changes. So the modulated light signals would be escape from the high unmodulated light signals, when the modulated light signals and the ultrasonic signal are processed cross correlation operation by a lock-in amplifier and without a chopper. Experimental results indicated that the signal-to-noise ratio of UOT is significantly improved by a lock-in amplifier, and the higher the repetition frequency of pulsed ultrasonic wave, the better the signal-to-noise ratio of UOT.

A low-noise low-power EEG acquisition node for scalable brain-machine interfaces

NASA Astrophysics Data System (ADS)

Sullivan, Thomas J.; Deiss, Stephen R.; Cauwenberghs, Gert; Jung, Tzyy-Ping

2007-05-01

Electroencephalograph (EEG) recording systems offer a versatile, noninvasive window on the brain's spatio-temporal activity for many neuroscience and clinical applications. Our research aims at improving the spatial resolution and mobility of EEG recording by reducing the form factor, power drain and signal fanout of the EEG acquisition node in a scalable sensor array architecture. We present such a node integrated onto a dimesized circuit board that contains a sensor's complete signal processing front-end, including amplifier, filters, and analog-to-digital conversion. A daisy-chain configuration between boards with bit-serial output reduces the wiring needed. The circuit's low power consumption of 423 μW supports EEG systems with hundreds of electrodes to operate from small batteries for many hours. Coupling between the bit-serial output and the highly sensitive analog input due to dense integration of analog and digital functions on the circuit board results in a deterministic noise component in the output, larger than the intrinsic sensor and circuit noise. With software correction of this noise contribution, the system achieves an input-referred noise of 0.277 μVrms in the signal band of 1 to 100 Hz, comparable to the best medical-grade systems in use. A chain of seven nodes using EEG dry electrodes created in micro-electrical-mechanical system (MEMS) technology is demonstrated in a real-world setting.

Miniature Packaging Concept for LNAs in the 200-300 GHz Range

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Fung, Andy; Varonen, Mikko; Lin, Robert; Peralta, Alejandro; Soria, Mary; Lee, Choonsup; Padmanabhan, Sharmila; Sarkozy, Stephen; Lai, Richard

2016-01-01

In this work, we describe new miniaturized low noise amplifier modules which we developed for incorporation in small-scale satellites or Cubesats, and which exhibit similar or better performance compared to previously reported LNAs in the literature. We have targeted the WR4 (170-260 GHz) and WR3 (220-325 GHz) waveguide bands for the module development. The modules include two different methods of E-plane probes which have been developed for low loss, and stability at high frequencies. MMIC LNAs were also developed for these frequency ranges and fabricated in Northrop Grumman Corporation's 35 nm InP HEMT technology, and we have experimentally verified that noise performance is lower than reported in prior work. The best results include a miniature LNA module with 550K noise at 224 GHz, and a wideband LNA module with 15 dB gain from 230-280 GHz.

Radiofrequency amplifier based on a dc superconducting quantum interference device

DOEpatents

Hilbert, Claude; Martinis, John M.; Clarke, John

1986-01-01

A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

Quantum-Limited Directional Amplifiers with Optomechanics

NASA Astrophysics Data System (ADS)

Malz, Daniel; Tóth, László D.; Bernier, Nathan R.; Feofanov, Alexey K.; Kippenberg, Tobias J.; Nunnenkamp, Andreas

2018-01-01

Directional amplifiers are an important resource in quantum-information processing, as they protect sensitive quantum systems from excess noise. Here, we propose an implementation of phase-preserving and phase-sensitive directional amplifiers for microwave signals in an electromechanical setup comprising two microwave cavities and two mechanical resonators. We show that both can reach their respective quantum limits on added noise. In the reverse direction, they emit thermal noise stemming from the mechanical resonators; we discuss how this noise can be suppressed, a crucial aspect for technological applications. The isolation bandwidth in both is of the order of the mechanical linewidth divided by the amplitude gain. We derive the bandwidth and gain-bandwidth product for both and find that the phase-sensitive amplifier has an unlimited gain-bandwidth product. Our study represents an important step toward flexible, on-chip integrated nonreciprocal amplifiers of microwave signals.

How to characterize the nonlinear amplifier?

NASA Technical Reports Server (NTRS)

Kallistratova, Dmitri Kouznetsov; Cotera, Carlos Flores

1994-01-01

The conception of the amplification of the coherent field is formulated. The definition of the coefficient of the amplification as the relation between the mean value of the field at the output to the value at the input and the definition of the noise as the difference between the number of photons in the output mode and square of the modulus of the mean value of the output amplitude are considered. Using a simple example it is shown that by these definitions the noise of the nonlinear amplifier may be less than the noise of the ideal linear amplifier of the same amplification coefficient. Proposals to search another definition of basic parameters of the nonlinear amplifiers are discussed. This definition should enable us to formulate the universal fundamental lower limit of the noise which should be valid for linear quantum amplifiers as for nonlinear ones.

Cryogenic low noise and low dissipation multiplexing electronics, using HEMT+SiGe ASICs, for the readout of high impedance sensors: New version

NASA Astrophysics Data System (ADS)

de la Broïse, Xavier; Lugiez, Francis; Bounab, Ayoub; Le Coguie, Alain

2015-07-01

High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at very low temperature, have demonstrated their capacity to be used in place of Si JFETs when working temperatures below 100 K are required. We associated them with specific SiGe ASICs that we developed, to implement a complete readout channel able to read highly segmented high impedance detectors within a framework of very low thermal dissipation. Our electronics is dimensioned to read 4096 detection channels, of typically 1 MΩ impedance, and performs 32:1 multiplexing and amplifying, dissipating only 6 mW at 2.5 K and 100 mW at 15 K thanks to high impedance commuting of input stage, with a typical noise of 1 nV/√Hz at 1 kHz.

Transimpedance Amplifier for MEMS SAW Oscillator in 1.4GHz

NASA Astrophysics Data System (ADS)

Kamarudin, N.; Karim, J.; Hussin, H.

2018-03-01

This work is to design a transimpedance amplifier for MEMS SAW resonator to achieve low power consumption at desired frequency. A transimpedance amplifier is designed and characterized for MEMS SAW resonator in 0.18μm CMOS process. The transimpedance amplifier achieves gain is 31 dBΩ at 176°. The power consume by oscillator is 0.6mW at VDD 1.8V while phase noise at -133.97dBc/Hz at 10kHz.

Two stage dual gate MESFET monolithic gain control amplifier for Ka-band

NASA Technical Reports Server (NTRS)

Sokolov, V.; Geddes, J.; Contolatis, A.

1987-01-01

A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

Ultra Small Aperture Terminal for Ka-Band SATCOM

NASA Technical Reports Server (NTRS)

Acosta, Roberto; Reinhart, Richard; Lee, Richard; Simons, Rainee

1997-01-01

An ultra small aperture terminal (USAT) at Ka-band frequency has been developed by Lewis Research Center (LeRC) for data rates up to 1.5 Mbps in the transmit mode and 40 Mbps in receive mode. The terminal consists of a 35 cm diameter offset-fed parabolic antenna which is attached to a solid state power amplifier and low noise amplifier. A single down converter is used to convert the Ka-band frequency to 70 MHz intermediate frequency (IF). A variable rate (9.6 Kbps to 10 Mbps) commercial modem with a standard RS-449/RS-232 interface is used to provide point-to-point digital services. The terminal has been demonstrated numerous times using the Advanced Communications Technology Satellite (ACTS) and the 4.5 in Link Evaluation Terminal (LET) in Cleveland. A conceptual design for an advanced terminal has also been developed. This advanced USAT utilizes Microwave Monolithic Integrated Circuit (MMIC) and flat plate array technologies. This terminal will be self contained in a single package which will include a 1 watt solid state amplifier (SSPA), low noise amplifier (LNA) and a modem card located behind the aperture of the array. The advanced USAT will be light weight, transportable, low cost and easy to point to the satellite. This paper will introduce designs for the reflector based and array based USAT's.

Low noise constant current source for bias dependent noise measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talukdar, D.; Bose, Suvendu; Bardhan, K. K.

2011-01-15

A low noise constant current source used for measuring the 1/f noise in disordered systems in ohmic as well as nonohmic regime is described. The source can supply low noise constant current starting from as low as 1 {mu}A to a few tens of milliampere with a high voltage compliance limit of around 20 V. The constant current source has several stages, which can work in a standalone manner or together to supply the desired value of load current. The noise contributed by the current source is very low in the entire current range. The fabrication of a low noisemore » voltage preamplifier modified for bias dependent noise measurements and based on the existing design available in the MAT04 data sheet is also described.« less

Low noise 874 GHz receivers for the International Submillimetre Airborne Radiometer (ISMAR)

NASA Astrophysics Data System (ADS)

Hammar, A.; Sobis, P.; Drakinskiy, V.; Emrich, A.; Wadefalk, N.; Schleeh, J.; Stake, J.

2018-05-01

We report on the development of two 874 GHz receiver channels with orthogonal polarizations for the International Submillimetre Airborne Radiometer. A spline horn antenna and dielectric lens, a Schottky diode mixer circuit, and an intermediate frequency (IF) low noise amplifier circuit were integrated in the same metallic split block housing. This resulted in a receiver mean double sideband (DSB) noise temperature of 3300 K (minimum 2770 K, maximum 3400 K), achieved at an operation temperature of 40 °C and across a 10 GHz wide IF band. A minimum DSB noise temperature of 2260 K at 20 °C was measured without the lens. Three different dielectric lens materials were tested and compared with respect to the radiation pattern and noise temperature. All three lenses were compliant in terms of radiation pattern, but one of the materials led to a reduction in noise temperature of approximately 200 K compared to the others. The loss in this lens was estimated to be 0.42 dB. The local oscillator chains have a power consumption of 24 W and consist of custom-designed Schottky diode quadruplers (5% power efficiency in operation, 8%-9% peak), commercial heterostructure barrier varactor (HBV) triplers, and power amplifiers that are pumped by using a common dielectric resonator oscillator at 36.43 GHz. Measurements of the radiation pattern showed a symmetric main beam lobe with full width half maximum <5° and side lobe levels below -20 dB. Return loss of a prototype of the spline horn and lens was measured using a network analyzer and frequency extenders to 750-1100 GHz. Time-domain analysis of the reflection coefficients shows that the reflections are below -25 dB and are dominated by the external waveguide interface.

A 94 GHz RF Electronics Subsystem for the CloudSat Cloud Profiling Radar

NASA Technical Reports Server (NTRS)

LaBelle, Remi C.; Girard, Ralph; Arbery, Graham

2003-01-01

The CloudSat spacecraft, scheduled for launch in 2004, will carry the 94 GHz Cloud Profiling Radar (CPR) instrument. The design, assembly and test of the flight Radio Frequency Electronics Subsystem (RFES) for this instrument has been completed and is presented here. The RFES consists of an Upconverter (which includes an Exciter and two Drive Amplifiers (DA's)), a Receiver, and a Transmitter Calibrator assembly. Some key performance parameters of the RFES are as follows: dual 100 mW pulse-modulated drive outputs at 94 GHz, overall Receiver noise figure < 5.0 dB, a highly stable W-band noise source to provide knowledge accuracy of Receiver gain of < 0.4 dB over the 2 year mission life, and a W-band peak power detector to monitor the transmitter output power to within 0.5 dB over life. Some recent monolithic microwave integrated circuit (MMIC) designs were utilized which implement the DA's in 0.1 micron GaAs high electron-mobility transistor (HEMT) technology and the Receiver low-noise amplifier (LNA) in 0.1 micron InP HEMT technology.

A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

NASA Astrophysics Data System (ADS)

Guo, Jiarong

2017-04-01

A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

High efficiency low cost monolithic module for SARSAT distress beacons

NASA Technical Reports Server (NTRS)

Petersen, Wendell C.; Siu, Daniel P.

1992-01-01

The program objectives were to develop a highly efficient, low cost RF module for SARSAT beacons; achieve significantly lower battery current drain, amount of heat generated, and size of battery required; utilize MMIC technology to improve efficiency, reliability, packaging, and cost; and provide a technology database for GaAs based UHF RF circuit architectures. Presented in viewgraph form are functional block diagrams of the SARSAT distress beacon and beacon RF module as well as performance goals, schematic diagrams, predicted performances, and measured performances for the phase modulator and power amplifier.

A low power, low noise Programmable Analog Front End (PAFE) for biopotential measurements.

PubMed

Adimulam, Mahesh Kumar; Divya, A; Tejaswi, K; Srinivas, M B

2017-07-01

A low power Programmable Analog Front End (PAFE) for biopotential measurements is presented in this paper. The PAFE circuit processes electrocardiogram (ECG), electromyography (EMG) and electroencephalogram (EEG) signals with higher accuracy. It consists mainly of improved transconductance programmable gain instrumentational amplifier (PGIA), programmable high pass filter (PHPF), and second order low pass filter (SLPF). A 15-bit programmable 5-stage successive approximation analog-to-digital converter (SAR-ADC) is implemented for improving the performance, whose power consumption is reduced due to multiple stages and by OTA/Comparator sharing technique between the stages. The power consumption is further reduced by operating the analog portion of PAFE on 0.5V supply voltage and digital portion on 0.3V supply voltage generated internally through a voltage regulator. The proposed low power PAFE has been fabricated in 180nm standard CMOS process. The performance parameters of PAFE in 15-bit mode are found to be, gain of 31-70 dB, input referred noise of 1.15 μVrms, CMRR of 110 dB, PSRR of 104 dB, and signal-to-noise distortion ratio (SNDR) of 83.5dB. The power consumption of the design is 1.1 μW @ 0.5 V supply voltage and it occupies a core silicon area of 1.2 mm 2 .

A micropower electrocardiogram amplifier.

PubMed

Fay, L; Misra, V; Sarpeshkar, R

2009-10-01

We introduce an electrocardiogram (EKG) preamplifier with a power consumption of 2.8 muW, 8.1 muVrms input-referred noise, and a common-mode rejection ratio of 90 dB. Compared to previously reported work, this amplifier represents a significant reduction in power with little compromise in signal quality. The improvement in performance may be attributed to many optimizations throughout the design including the use of subthreshold transistor operation to improve noise efficiency, gain-setting capacitors versus resistors, half-rail operation wherever possible, optimal power allocations among amplifier blocks, and the sizing of devices to improve matching and reduce noise. We envision that the micropower amplifier can be used as part of a wireless EKG monitoring system powered by rectified radio-frequency energy or other forms of energy harvesting like body vibration and body heat.

Frequency range selection method of trans-impedance amplifier for high sensitivity lock-in amplifier used in the optical sensors

NASA Astrophysics Data System (ADS)

Park, Chang-In; Jeon, Su-Jin; Hong, Nam-Pyo; Choi, Young-Wan

2016-03-01

Lock-in amplifier (LIA) has been proposed as a detection technique for optical sensors because it can measure low signal in high noise level. LIA uses synchronous method, so the input signal frequency is locked to a reference frequency that is used to carry out the measurements. Generally, input signal frequency of LIA used in optical sensors is determined by modulation frequency of optical signal. It is important to understand the noise characteristics of the trans-impedance amplifier (TIA) to determine the modulation frequency. The TIA has a frequency range in which noise is minimized by the capacitance of photo diode (PD) and the passive component of TIA feedback network. When the modulation frequency is determined in this range, it is possible to design a robust system to noise. In this paper, we propose a method for the determination of optical signal modulation frequency selection by using the noise characteristics of TIA. Frequency response of noise in TIA is measured by spectrum analyzer and minimum noise region is confirmed. The LIA and TIA circuit have been designed as a hybrid circuit. The optical sensor is modeled by the laser diode (LD) and photo diode (PD) and the modulation frequency was used as the input to the signal generator. The experiments were performed to compare the signal to noise ratio (SNR) of the minimum noise region and the others. The results clearly show that the SNR is enhanced in the minimum noise region of TIA.

GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, A.G.; Hietala, V.M.; Greenway, D.

1998-05-01

In this work the authors report results of narrowband amplifiers designed for milliwatt and submilliwatt power consumption using JFET and pseudomorphic high electron mobility transistors (PHEMT) GaAs-based technologies. Enhancement-mode JFETs were used to design both a hybrid amplifier with off-chip matching as well as a monolithic microwave integrated circuit (MMIC) with on-chip matching. The hybrid amplifier achieved 8--10 dB of gain at 2.4 GHz and 1 mW. The MMIC achieved 10 dB of gain at 2.4 GHz and 2 mW. Submilliwatt circuits were also explored by using 0.25 {micro}m PHEMTs. 25 {micro}W power levels were achieved with 5 dB ofmore » gain for a 215 MHz hybrid amplifier. These results significantly reduce power consumption levels achievable with the JFETs or prior MESFET, heterostructure field effect transistor (HFET), or Si bipolar results from other laboratories.« less

Simulation and measurement of a Ka-band HTS MMIC Josephson junction mixer

NASA Astrophysics Data System (ADS)

Zhang, Ting; Pegrum, Colin; Du, Jia; Guo, Yingjie Jay

2017-01-01

We report modeling and simulation results for a Ka band high-temperature superconducting (HTS) monolithic microwave integrated circuit (MMIC) Josephson junction mixer. A Verilog-A model of a Josephson junction is established and imported into the system simulator to realize a full HTS MMIC circuit simulation containing the HTS passive circuit models. Impedance matching optimization between the junction and passive devices is investigated. Junction DC I-V characteristics, current and local oscillator bias conditions and mixing performance are simulated and compared with the experimental results. Good agreement is obtained between the simulation and measurement results.

Digital radiology using active matrix readout: amplified pixel detector array for fluoroscopy.

PubMed

Matsuura, N; Zhao, W; Huang, Z; Rowlands, J A

1999-05-01

Active matrix array technology has made possible the concept of flat panel imaging systems for radiography. In the conventional approach a thin-film circuit built on glass contains the necessary switching components (thin-film transistors or TFTs) to readout an image formed in either a phosphor or photoconductor layer. Extension of this concept to real time imaging--fluoroscopy--has had problems due to the very low noise required. A new design strategy for fluoroscopic active matrix flat panel detectors has therefore been investigated theoretically. In this approach, the active matrix has integrated thin-film amplifiers and readout electronics at each pixel and is called the amplified pixel detector array (APDA). Each amplified pixel consists of three thin-film transistors: an amplifier, a readout, and a reset TFT. The performance of the APDA approach compared to the conventional active matrix was investigated for two semiconductors commonly used to construct active matrix arrays--hydrogenated amorphous silicon and polycrystalline silicon. The results showed that with amplification close to the pixel, the noise from the external charge preamplifiers becomes insignificant. The thermal and flicker noise of the readout and the amplifying TFTs at the pixel become the dominant sources of noise. The magnitude of these noise sources is strongly dependent on the TFT geometry and its fabrication process. Both of these could be optimized to make the APDA active matrix operate at lower noise levels than is possible with the conventional approach. However, the APDA cannot be made to operate ideally (i.e., have noise limited only by the amount of radiation used) at the lowest exposure rate required in medical fluoroscopy.

A flexible CPW package for a 30 GHz MMIC amplifier. [coplanar waveguide

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Taub, Susan R.

1992-01-01

A novel package, which consists of a carrier housing, has been developed for monolithic-millimeter wave Integrated Circuit amplifiers which operate at 30 giga-Hz. The carrier has coplanar waveguide (CPW) interconnects and provides heat-sinking, tuning, and cascading capabilities. The housing provides electrical isolation, mechanical protection and a feed-thru for biasing.

A 20 Mfps high frame-depth CMOS burst-mode imager with low power in-pixel NMOS-only passive amplifier

NASA Astrophysics Data System (ADS)

Wu, L.; San Segundo Bello, D.; Coppejans, P.; Craninckx, J.; Wambacq, P.; Borremans, J.

2017-02-01

This paper presents a 20 Mfps 32 × 84 pixels CMOS burst-mode imager featuring high frame depth with a passive in-pixel amplifier. Compared to the CCD alternatives, CMOS burst-mode imagers are attractive for their low power consumption and integration of circuitry such as ADCs. Due to storage capacitor size and its noise limitations, CMOS burst-mode imagers usually suffer from a lower frame depth than CCD implementations. In order to capture fast transitions over a longer time span, an in-pixel CDS technique has been adopted to reduce the required memory cells for each frame by half. Moreover, integrated with in-pixel CDS, an in-pixel NMOS-only passive amplifier alleviates the kTC noise requirements of the memory bank allowing the usage of smaller capacitors. Specifically, a dense 108-cell MOS memory bank (10fF/cell) has been implemented inside a 30μm pitch pixel, with an area of 25 × 30μm2 occupied by the memory bank. There is an improvement of about 4x in terms of frame depth per pixel area by applying in-pixel CDS and amplification. With the amplifier's gain of 3.3, an FD input-referred RMS noise of 1mV is achieved at 20 Mfps operation. While the amplification is done without burning DC current, including the pixel source follower biasing, the full pixel consumes 10μA at 3.3V supply voltage at full speed. The chip has been fabricated in imec's 130nm CMOS CIS technology.

Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2004-01-01

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

Optimization of a low noise detection circuit for probing the structure of damage cascades with IBIC

DOE PAGES

Auden, Elizabeth C.; Doyle, Barney L.; Bielejec, Edward; ...

2015-06-18

Optimal detector / pre-amplifier combinations have been identified for the use of light ion IBIC (ion beam induced charge) to probe the physical structure of electrically active defects in damage cascades caused by heavy ion implantation. The ideal detector must have a sufficiently thin dead layer that incident ions will produce the majority of damage cascades in the depletion region of the detector rather than the dead layer. Detector and circuit noise must be low enough to detect the implantation of a single heavy ion as well as the decrease in the light ion IBIC signal caused by Shockley-Read-Hall recombinationmore » when the beam scans regions of the detector damaged by the heavy ion. The IBIC signals from three detectors irradiated with 750 keV He⁺ ions are measured with commercial and bespoke charge sensitive pre-amplifiers to identify the combination with the lowest noise.« less

MEDUSA-32: A low noise, low power silicon strip detector front-end electronics, for space applications

NASA Astrophysics Data System (ADS)

Cicuttin, Andres; Colavita, Alberto; Cerdeira, Alberto; Fratnik, Fabio; Vacchi, Andrea

1997-02-01

In this report we describe a mixed analog-digital integrated circuit (IC) designed as the front-end electronics for silicon strip-detectors for space applications. In space power consumption, compactness and robustness become critical constraints for a pre-amplifier design. The IC is a prototype with 32 complete channels, and it is intended for a large area particle tracker of a new generation of gamma ray telescopes. Each channel contains a charge sensitive amplifier, a pulse shaper, a discriminator and two digital buffers. The reference trip point of the discriminator is adjustable. This chip also has a custom PMOSFET transistor per channel, included in order to provide the high dynamic resistance needed to reverse-bias the strip diode. The digital part of the chip is used to store and serially shift out the state of the channels. There is also a storage buffer that allows the disabling of non-functioning channels if it is required by the data acquisition system. An input capacitance of 30 pF introduced at the input of the front-end produces less than 1000 electrons of RMS equivalent noise charge (ENC), for a total power dissipation of only 60 μW per channel. The chip was made using Orbit's 1.2 μm double poly, double metal n-well low noise CMOS process. The dimensions of the IC are 2400 μm × 8840 μm.

High level white noise generator

DOEpatents

Borkowski, Casimer J.; Blalock, Theron V.

1979-01-01

A wide band, stable, random noise source with a high and well-defined output power spectral density is provided which may be used for accurate calibration of Johnson Noise Power Thermometers (JNPT) and other applications requiring a stable, wide band, well-defined noise power spectral density. The noise source is based on the fact that the open-circuit thermal noise voltage of a feedback resistor, connecting the output to the input of a special inverting amplifier, is available at the amplifier output from an equivalent low output impedance caused by the feedback mechanism. The noise power spectral density level at the noise source output is equivalent to the density of the open-circuit thermal noise or a 100 ohm resistor at a temperature of approximately 64,000 Kelvins. The noise source has an output power spectral density that is flat to within 0.1% (0.0043 db) in the frequency range of from 1 KHz to 100 KHz which brackets typical passbands of the signal-processing channels of JNPT's. Two embodiments, one of higher accuracy that is suitable for use as a standards instrument and another that is particularly adapted for ambient temperature operation, are illustrated in this application.

A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

NASA Astrophysics Data System (ADS)

Kahle, Duncan; Aslam, Shahid; Herrero, Federico A.; Waczynski, Augustyn

2016-09-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

NASA Technical Reports Server (NTRS)

Kahle, Duncan; Aslam, Shahid; Herrero, Frederico A.; Waczynski, Augustyn

2016-01-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

Common source cascode amplifiers for integrating IR-FPA applications

NASA Technical Reports Server (NTRS)

Woolaway, James T.; Young, Erick T.

1989-01-01

Space based astronomical infrared measurements present stringent performance requirements on the infrared detector arrays and their associated readout circuitry. To evaluate the usefulness of commercial CMOS technology for astronomical readout applications a theoretical and experimental evaluation was performed on source follower and common-source cascode integrating amplifiers. Theoretical analysis indicates that for conditions where the input amplifier integration capacitance is limited by the detectors capacitance the input referred rms noise electrons of each amplifier should be equivalent. For conditions of input gate limited capacitance the source follower should provide lower noise. Measurements of test circuits containing both source follower and common source cascode circuits showed substantially lower input referred noise for the common-source cascode input circuits. Noise measurements yielded 4.8 input referred rms noise electrons for an 8.5 minute integration. The signal and noise gain of the common-source cascode amplifier appears to offer substantial advantages in acheiving predicted noise levels.

Ka-band Ga-As FET noise receiver/device development

NASA Technical Reports Server (NTRS)

Schellenberg, J. M.; Feng, M.; Hackett, L. H.; Watkins, E. T.; Yamasaki, H.

1982-01-01

The development of technology for a 30 GHz low noise receiver utilizing GaAs FET devices exclusively is discussed. This program required single and dual-gate FET devices, low noise FET amplifiers, dual-gate FET mixers, and FET oscillators operating at Ka-band frequencies. A 0.25 micrometer gate FET device, developed with a minimum noise figure of 3.3 dB at 29 GHz and an associated gain of 7.4 dB, was used to fabricate a 3-stage amplifier with a minimum noise figure and associated gain of 4.4 dB and 17 dB, respectively. The 1-dB gain bandwidth of this amplifier extended from below 26.5 GHz to 30.5 GHz. A dual-gate mixer with a 2 dB conversion loss and a minimum noise figure of 10 dB at 29 GHz as well as a dielectric resonator stabilized FET oscillator at 25 GHz for the receiver L0. From these components, a hybrid microwave integrated circuit receiver was constructed which demonstrates a minimum single-side band noise figure of 4.6 dB at 29 GHz with a conversion gain of 17 dB. The output power at the 1-dB gain compression point was -5 dBm.

Radiofrequency amplifier based on a dc superconducting quantum interference device

DOEpatents

Hilbert, C.; Martinis, J.M.; Clarke, J.

1984-04-27

A low noise radiofrequency amplifer, using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID and an input coil are maintained at superconductivity temperatures in a superconducting shield, with the input coil inductively coupled to the superconducting ring of the dc SQUID. A radiofrequency signal from outside the shield is applied to the input coil, and an amplified radiofrequency signal is developed across the dc SQUID ring and transmitted to exteriorly of the shield. A power gain of 19.5 +- 0.5 dB has been achieved with a noise temperature of 1.0 +- 0.4 K at a frequency of 100 MHz.

Two-electrode low supply voltage electrocardiogram signal amplifier.

PubMed

Dobrev, D

2004-03-01

Portable biomedical instrumentation has become an important part of diagnostic and treatment instrumentation, including telemedicine applications. Low-voltage and low-power design tendencies prevail. Modern battery cell voltages in the range of 3-3.6 V require appropriate circuit solutions. A two-electrode biopotential amplifier design is presented, with a high common-mode rejection ratio (CMRR), high input voltage tolerance and standard first-order high-pass characteristic. Most of these features are due to a high-gain first stage design. The circuit makes use of passive components of popular values and tolerances. Powered by a single 3 V source, the amplifier tolerates +/- 1 V common mode voltage, +/- 50 microA common mode current and 2 V input DC voltage, and its worst-case CMRR is 60 dB. The amplifier is intended for use in various applications, such as Holter-type monitors, defibrillators, ECG monitors, biotelemetry devices etc.

Differential transimpedance amplifier circuit for correlated differential amplification

DOEpatents

Gresham, Christopher A [Albuquerque, NM; Denton, M Bonner [Tucson, AZ; Sperline, Roger P [Tucson, AZ

2008-07-22

A differential transimpedance amplifier circuit for correlated differential amplification. The amplifier circuit increase electronic signal-to-noise ratios in charge detection circuits designed for the detection of very small quantities of electrical charge and/or very weak electromagnetic waves. A differential, integrating capacitive transimpedance amplifier integrated circuit comprising capacitor feedback loops performs time-correlated subtraction of noise.

Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

PubMed

Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

2008-08-01

We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

Multifrequency Raman amplifiers

NASA Astrophysics Data System (ADS)

Barth, Ido; Fisch, Nathaniel J.

2018-03-01

In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the total fluence is split between the different spectral components.

A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain

NASA Astrophysics Data System (ADS)

Hongfei, Yao; Yuxiong, Cao; Danyu, Wu; Xiaoxi, Ning; Yongbo, Su; Zhi, Jin

2013-07-01

A two-stage MMIC power amplifier has been realized by use of a 1-μm InP double heterojunction bipolar transistor (DHBT). The cascode structure, low-loss matching networks, and low-parasite cell units enhance the power gain. The optimum load impedance is determined from load-pull simulation. A coplanar waveguide transmission line is adopted for its ease of fabrication. The chip size is 1.5 × 1.7 mm2 with the emitter area of 16 × 1 μm × 15 μm in the output stage. Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB. The high power gain makes it very suitable for medium power amplification.

Josephson Parametric Reflection Amplifier with Integrated Directionality

NASA Astrophysics Data System (ADS)

Westig, M. P.; Klapwijk, T. M.

2018-06-01

A directional superconducting parametric amplifier in the GHz frequency range is designed and analyzed, suitable for low-power read-out of microwave kinetic inductance detectors employed in astrophysics and when combined with a nonreciprocal device at its input also for circuit quantum electrodynamics. It consists of a one-wavelength-long nondegenerate Josephson parametric reflection amplifier circuit. The device has two Josephson-junction oscillators, connected via a tailored impedance to an on-chip passive circuit which directs the in- to the output port. The amplifier provides a gain of 20 dB over a bandwidth of 220 MHz on the signal as well as on the idler portion of the amplified input and the total photon shot noise referred to the input corresponds to maximally approximately 1.3 photons per second per Hertz of bandwidth. We predict a factor of 4 increase in dynamic range compared to conventional Josephson parametric amplifiers.

MMIC linear-phase and digital modulators for deep space spacecraft X-band transponder applications

NASA Technical Reports Server (NTRS)

Mysoor, Narayan R.; Ali, Fazal

1991-01-01

The design concepts, analyses, and development of GaAs monolithic microwave integrated circuit (MMIC) linear-phase and digital modulators for the next generation of space-borne communications systems are summarized. The design approach uses a compact lumped element quadrature hybrid and Metal Semiconductor Field Effect Transistors (MESFET)-varactors to provide low loss and well-controlled phase performance for deep space transponder (DST) applications. The measured results of the MESFET-diode show a capacitance range of 2:1 under reverse bias, and a Q of 38 at 10 GHz. Three cascaded sections of hybrid-coupled reflection phase shifters were modeled and simulations performed to provide an X-band (8415 +/- 50 MHz) DST phase modulator with +/- 2.5 radians of peak phase deviation. The modulator will accommodate downlink signal modulation with composite telemetry and ranging data, with a deviation linearity tolerance of +/- 8 percent and insertion loss of less than 8 +/- 0.5 dB. The MMIC digital modulator is designed to provide greater than 10 Mb/s of bi-phase modulation at X-band.

Improved-Bandwidth Transimpedance Amplifier

NASA Technical Reports Server (NTRS)

Chapsky, Jacob

2009-01-01

The widest available operational amplifier, with the best voltage and current noise characteristics, is considered for transimpedance amplifier (TIA) applications where wide bandwidth is required to handle fast rising input signals (as for time-of-flight measurement cases). The added amplifier inside the TIA feedback loop can be configured to have slightly lower voltage gain than the bandwidth reduction factor.

Logarithmic amplifiers.

PubMed

Gandler, W; Shapiro, H

1990-01-01

Logarithmic amplifiers (log amps), which produce an output signal proportional to the logarithm of the input signal, are widely used in cytometry for measurements of parameters that vary over a wide dynamic range, e.g., cell surface immunofluorescence. Existing log amp circuits all deviate to some extent from ideal performance with respect to dynamic range and fidelity to the logarithmic curve; accuracy in quantitative analysis using log amps therefore requires that log amps be individually calibrated. However, accuracy and precision may be limited by photon statistics and system noise when very low level input signals are encountered.

On the aeroacoustic tonal noise generation mechanism of a sharp-edged plate.

PubMed

Moreau, Danielle J; Brooks, Laura A; Doolan, Con J

2011-04-01

This letter presents an experimental study on the tonal noise generated by a sharp-edged flat plate at low-to-moderate Reynolds number. Flow and far-field noise data reveal that, in this particular case, the tonal noise appears to be governed by vortex shedding processes. Also related to the existence of the tonal noise is a region of separated flow slightly upstream of the trailing edge. Hydrodynamic fluctuations at selected vortex shedding frequencies are strongly amplified by the inflectional mean velocity profile in the separated shear layer. The amplified hydrodynamic fluctuations are diffracted by the trailing edge, producing strong tonal noise.

Measurement of SQUID noise levels for SuperCDMS SNOLAB detectors - Final Paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Maxwell

SuperCDMS SNOLAB is a second generation direct dark matter search. In the SuperCDMS SNOLAB experiment, detectors are able to pick up from signals from dark matter nuclear recoil interactions which occur inside the bulk of the detectors. These interactions produce both phonon and charge signals. HEMTs read out charge signals whereas TES are used to detect phonon signals which are then read out by SQUID amplifiers. SQUID amplifiers must add negligible noise to the TES intrinsic noise which has been previously measured and is approximately 50pA/√Hz down to 100Hz for ease of signal distinguishability in dark matter nuclear interactions. Themore » intrinsic noise level of the SQUID was tested in the SLAC 300mK fridge and determined to provide adequately low levels of noise with a floor of approximately 3pA/√Hz. Furthermore, a 10x amplifier was tested for addition of extraneous noise. This noise was investigated with and without this amplifier, and it was found that it did not add a significant amount of noise to the intrinsic SQUID noise.« less

Characteristics research on self-amplified distributed feedback fiber laser

NASA Astrophysics Data System (ADS)

Song, Zhiqiang; Qi, Haifeng; Guo, Jian; Wang, Chang; Peng, Gangding

2014-09-01

A distributed feedback (DFB) fiber laser with a ratio of the backward to forward output power of 1:100 was composed by a 45-mm-length asymmetrical phase-shifted fiber grating fabricated on the 50-mm erbium-doped photosensitive fiber. Forward output laser was amplified using a certain length of Nufern EDFL-980-Hp erbium-doped fiber to absorb the surplus pump power after the active phase-shifted fiber grating and get population inversion. By using OptiSystem software, the best fiber length of the EDFL to get the highest gain was simulated. In order to keep the amplified laser with the narrow line-width and low noise, a narrow-band light filter consisting of a fiber Bragg grating (FBG) with the same Bragg wavelength as the laser and an optical circulator was used to filter the amplified spontaneous emission (ASE) noise of the out-cavity erbium-doped fiber. The designed laser structure sufficiently utilized the pump power, and a DFB fiber laser with the 32.5-mW output power, 11.5-kHz line width, and -87-dB/Hz relative intensity noise (RIN) at 300 mW of 980 nm pump power was brought out.

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

NASA Technical Reports Server (NTRS)

Thomas, B.; Gill, J.; Maestrini, A.; Lee, C.; Lin, R.; Sin, S.; Peralta, A.; Mehdi, I.

2011-01-01

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

NASA Technical Reports Server (NTRS)

Thomas, B.; Gill, J.; Maestrini, A.; Lee, C.; Lin, R.; Sin, S.; Peralta, A.; Mehdi, I.

2010-01-01

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

Low-frequency switching in a transistor amplifier.

PubMed

Carroll, T L

2003-04-01

It is known from extensive work with the diode resonator that the nonlinear properties of a P-N junction can lead to period doubling, chaos, and other complicated behaviors in a driven circuit. There has been very little work on what happens when more than one P-N junction is present. In this work, the first step towards multiple P-N junction circuits is taken by doing both experiments and simulations with a single-transistor amplifier using a bipolar transistor. Period doubling and chaos are seen when the amplifier is driven with signals between 100 kHz and 1 MHz, and they coincide with a very low frequency switching between different period doubled (or chaotic) wave forms. The switching frequencies are between 5 and 10 Hz. The switching behavior was confirmed in a simplified model of the transistor amplifier.

Implantable neurotechnologies: a review of integrated circuit neural amplifiers.

PubMed

Ng, Kian Ann; Greenwald, Elliot; Xu, Yong Ping; Thakor, Nitish V

2016-01-01

Neural signal recording is critical in modern day neuroscience research and emerging neural prosthesis programs. Neural recording requires the use of precise, low-noise amplifier systems to acquire and condition the weak neural signals that are transduced through electrode interfaces. Neural amplifiers and amplifier-based systems are available commercially or can be designed in-house and fabricated using integrated circuit (IC) technologies, resulting in very large-scale integration or application-specific integrated circuit solutions. IC-based neural amplifiers are now used to acquire untethered/portable neural recordings, as they meet the requirements of a miniaturized form factor, light weight and low power consumption. Furthermore, such miniaturized and low-power IC neural amplifiers are now being used in emerging implantable neural prosthesis technologies. This review focuses on neural amplifier-based devices and is presented in two interrelated parts. First, neural signal recording is reviewed, and practical challenges are highlighted. Current amplifier designs with increased functionality and performance and without penalties in chip size and power are featured. Second, applications of IC-based neural amplifiers in basic science experiments (e.g., cortical studies using animal models), neural prostheses (e.g., brain/nerve machine interfaces) and treatment of neuronal diseases (e.g., DBS for treatment of epilepsy) are highlighted. The review concludes with future outlooks of this technology and important challenges with regard to neural signal amplification.

Implantable neurotechnologies: a review of integrated circuit neural amplifiers

PubMed Central

Greenwald, Elliot; Xu, Yong Ping; Thakor, Nitish V.

2016-01-01

Neural signal recording is critical in modern day neuroscience research and emerging neural prosthesis programs. Neural recording requires the use of precise, low-noise amplifier systems to acquire and condition the weak neural signals that are transduced through electrode interfaces. Neural amplifiers and amplifier-based systems are available commercially or can be designed in-house and fabricated using integrated circuit (IC) technologies, resulting in very large-scale integration or application-specific integrated circuit solutions. IC-based neural amplifiers are now used to acquire untethered/portable neural recordings, as they meet the requirements of a miniaturized form factor, light weight and low power consumption. Furthermore, such miniaturized and low-power IC neural amplifiers are now being used in emerging implantable neural prosthesis technologies. This review focuses on neural amplifier-based devices and is presented in two interrelated parts. First, neural signal recording is reviewed, and practical challenges are highlighted. Current amplifier designs with increased functionality and performance and without penalties in chip size and power are featured. Second, applications of IC-based neural amplifiers in basic science experiments (e.g., cortical studies using animal models), neural prostheses (e.g., brain/nerve machine interfaces) and treatment of neuronal diseases (e.g., DBS for treatment of epilepsy) are highlighted. The review concludes with future outlooks of this technology and important challenges with regard to neural signal amplification. PMID:26798055

Multifrequency Raman amplifiers

DOE PAGES

Barth, Ido; Fisch, Nathaniel J.

2018-03-08

In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell (PIC) simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the totalmore » fluence is split between the different spectral components.« less

Multifrequency Raman amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barth, Ido; Fisch, Nathaniel J.

In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell (PIC) simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the totalmore » fluence is split between the different spectral components.« less

Portable Amplifier Design for a Novel EEG Monitor in Point-of-Care Applications.

PubMed

Luan, Bo; Sun, Mingui; Jia, Wenyan

2012-01-01

The Electroencephalography (EEG) is a common diagnostic tool for neurological diseases and dysfunctions, such as epilepsy and insomnia. However, the current EEG technology cannot be utilized quickly and conveniently at the point of care due to the complex skin preparation procedures required and the inconvenient EEG data acquisition systems. This work presents a portable amplifier design that integrates a set of skin screw electrodes and a wireless data link. The battery-operated amplifier contains an instrumentation amplifier, two noninverting amplifiers, two high-pass filters, and a low-pass filter. It is able to magnify the EEG signals over 10,000 times and has a high impedance, low noise, small size and low weight. Our electrode and amplifier are ideal for point-of-care applications, especially during transportation of patients suffering from traumatic brain injury or stroke.

Low Noise Optically Pre-amplified Lightwave Receivers and Other Applications of Fiber Optic Parametric Amplifiers

DTIC Science & Technology

2010-07-27

provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently... PERSON A. GAVRIELIDES a. REPORT UNCLAS b. ABSTRACT UNCLAS c. THIS PAGE UNCLAS 19b. TELEPHONE NUMBER (Include area code) +44 (0)1895 616205...PS) FOPAs are discussed, and the phase-squeezing behavior of PS-FOPAs is characterized in Sec V. In Sec. VI, we present measurements of the noise

Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125[degrees]C storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dreike, P.L.; Barton, D.L.; Sandoval, C.E.

1992-01-01

Microwave parameters drifted significantly for two out of twenty- nine GaAs MESFET-based MMICs during ten weeks of storage at 125[degrees]C and 150[degrees]C. Analysis using measured, post- storage, FET characteristics and the microwave behavior indicates that all of the FETs in the MMICs drifted, most likely due to contamination.

Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125{degrees}C storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dreike, P.L.; Barton, D.L.; Sandoval, C.E.

1992-10-01

Microwave parameters drifted significantly for two out of twenty- nine GaAs MESFET-based MMICs during ten weeks of storage at 125{degrees}C and 150{degrees}C. Analysis using measured, post- storage, FET characteristics and the microwave behavior indicates that all of the FETs in the MMICs drifted, most likely due to contamination.

Programmable, very low noise current source.

PubMed

Scandurra, G; Cannatà, G; Giusi, G; Ciofi, C

2014-12-01

We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.

Programmable, very low noise current source

NASA Astrophysics Data System (ADS)

Scandurra, G.; Cannatà, G.; Giusi, G.; Ciofi, C.

2014-12-01

We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.

Quad-channel beam switching WR3-band transmitter MMIC

NASA Astrophysics Data System (ADS)

Müller, Daniel; Eren, Gülesin; Wagner, Sandrine; Tessmann, Axel; Leuther, Arnulf; Zwick, Thomas; Kallfass, Ingmar

2017-05-01

Millimeter wave radar systems offer several advantages such as the combination of high resolution and the penetration of adverse atmosphere like smoke, dust or rain. This paper presents a monolithic millimeter wave integrated circuit (MMIC) transmitter which offers four channel beam steering capabilities and can be used as a radar or communication system transmitter. At the local oscillator input, in order to simplify packaging, a frequency tripler is used to multiply the 76.6 - 83.3 GHz input signal to the intended 230 - 250 GHz output frequency range. A resistive mixer is used for the conversion of the intermediate frequency signal into the RF domain. The actual beam steering network is realized using an active single pole quadruple throw (SP4T) switch, which is connected to a integrated Butler matrix. The MMIC was fabricated in a 35 nm InGaAs mHEMT process and has a size of 4.0 mm × 1.5 mm

An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance

NASA Astrophysics Data System (ADS)

Zhang, Da; Gao, Xindong; Chen, Si; Norström, Hans; Smith, Ulf; Solomon, Paul; Zhang, Shi-Li; Zhang, Zhen

2014-08-01

This work presents a proof-of-concept ion-sensitive device operating in electrolytes. The device, i.e., an ion-gated bipolar amplifier (IGBA), consists of a modified ion-sensitive field-effect transistor (ISFET) intimately integrated with a vertical bipolar junction transistor for immediate current amplification without introducing additional noise. With the current non-optimized design, the IGBA is already characterized by a 70-fold internal amplification of the ISFET output signal. This signal amplification is retained when the IGBA is used for monitoring pH variations. The tight integration significantly suppresses the interference of the IGBA signal by external noise, which leads to an improvement in signal-to-noise performance compared to its ISFET reference. The IGBA concept is especially suitable for biochips with millions of electric sensors that are connected to peripheral readout circuitry via extensive metallization which may in turn invite external interferences leading to contamination of the signal before it reaches the first external amplification stage.

Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier.

PubMed

Yang, Jong-Ryul; Han, Seong-Tae; Baek, Donghyun

2017-09-09

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m² input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB.

Low Loss Nanostructured Polymers for Chip-scale Waveguide Amplifiers.

PubMed

Chen, George F R; Zhao, Xinyu; Sun, Yang; He, Chaobin; Tan, Mei Chee; Tan, Dawn T H

2017-06-13

On-chip waveguide amplifiers offer higher gain in small device sizes and better integration with photonic devices than the commonly available fiber amplifiers. However, on-chip amplifiers have yet to make its way into the mainstream due to the limited availability of materials with ideal light guiding and amplification properties. A low-loss nanostructured on-chip channel polymeric waveguide amplifier was designed, characterized, fabricated and its gain experimentally measured at telecommunication wavelength. The active polymeric waveguide core comprises of NaYF 4 :Yb,Er,Ce core-shell nanocrystals dispersed within a SU8 polymer, where the nanoparticle interfacial characteristics were tailored using hydrolyzed polyhedral oligomeric silsesquioxane-graft-poly(methyl methacrylate) to improve particle dispersion. Both the enhanced IR emission intensity from our nanocrystals using a tri-dopant scheme and the reduced scattering losses from our excellent particle dispersion at a high solid loading of 6.0 vol% contributed to the outstanding optical performance of our polymeric waveguide. We achieved one of the highest reported gain of 6.6 dB/cm using a relatively low coupled pump power of 80 mW. These polymeric waveguide amplifiers offer greater promise for integrated optical circuits due to their processability and integration advantages which will play a key role in the emerging areas of flexible communication and optoelectronic devices.

Dynamic Compression of the Signal in a Charge Sensitive Amplifier: From Concept to Design

NASA Astrophysics Data System (ADS)

Manghisoni, Massimo; Comotti, Daniele; Gaioni, Luigi; Ratti, Lodovico; Re, Valerio

2015-10-01

This work is concerned with the design of a low-noise Charge Sensitive Amplifier featuring a dynamic signal compression based on the non-linear features of an inversion-mode MOS capacitor. These features make the device suitable for applications where a non-linear characteristic of the front-end is required, such as in imaging instrumentation for free electron laser experiments. The aim of the paper is to discuss a methodology for the proper design of the feedback network enabling the dynamic signal compression. Starting from this compression solution, the design of a low-noise Charge Sensitive Amplifier is also discussed. The study has been carried out by referring to a 65 nm CMOS technology.

Quantitative analysis of four EMG amplifiers.

PubMed

Perreault, E J; Hunter, I W; Kearney, R E

1993-09-01

Four typical EMG amplifiers were tested quantitatively to observe the diversity and specificity of available equipment. Gain, phase, common mode rejection ratio (CMRR) and noise characteristics were measured for each device. Various gain and phase responses were observed, each best suited to specific application areas. For all amplifiers, the CMRR was shown to decrease dramatically in the presence of input impedance mismatches of more than 10 k omega between the two electrodes. Because such impedance mismatches are common on the skin surface, these results indicate that proper skin preparation is required to maximize the noise rejection capabilities of the tested amplifiers.

Ka-Band Waveguide 2-Way Hybrid Combiner for MMIC Amplifiers with Unequal and Arbitrary Power Output Ratio

NASA Technical Reports Server (NTRS)

Simons, Rainee N (Inventor); Chevalier, Christine T (Inventor); Wintucky, Edwin G (Inventor); Freeman, Jon C (Inventor)

2016-01-01

One or more embodiments of the present invention describe an apparatus and method to combine unequal powers. The apparatus includes a first input port, a second input port, and a combiner. The first input port is operably connected to a first power amplifier and is configured to receive a first power from the first power amplifier. The second input port is operably connected to a second power amplifier and is configured to receive a second power from the second power amplifier. The combiner is configured to simultaneously receive the first power from the first input port and the second power from the second input port. The combiner is also configured to combine the first power and second power to produce a maximized power. The first power and second power are unequal.

Development of Suitable Technologies for Heterodyne W-Band Focal-Plane Arrays

NASA Astrophysics Data System (ADS)

Mena, Patricio; Reyes, N.; Jarufe, C.; Barrueto, I.; Molina, R.; Monasterio, D.; Bronfman, L.

2018-01-01

We present the ongoing efforts at University of Chile to develop technologies for heterodyne focal-plane arrays. We have focused in W band covering four areas of study. 1. OPTICAL SYSTEMS: We have studied the possibility of using multi-pixel receivers at ALMA-type antennas. We designed an array of 7 pixels (extensible to 19) that fits into an ALMA cartridge. The design includes a set of mirrors and a fly-eye lens that allows the system to fit on the available space. For the feed, we have studied smooth-wall horns and Vivaldi antennas. 2. COMPACT OMTS: We have been working on turnstile-type OMTs fabricated in platelets that permit integration of several OMTs in the same block. 3. LOW NOISE AMPLIFIERS: We are working on a hybrid concept that uses a single transistor mounted before a commercial MMIC. We have measured noise temperatures lower than 50 K. The aim is to produce compact blocks suitable for integration. 4. DOWNCONVERTING MIXERS: We have designed biased sub-harmonic mixers based on Schottky diodes using MMIC technology and to be fabricated in a commercial run. We expect conversion losses below 15 dB. Mixers and LNA will be packaged in a single block using a 2SB scheme.

Test Of A Microwave Amplifier With Superconductive Filter

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Toncich, S. S.; Chorey, C. M.; Bonetti, R. R.; Williams, A. E.

1995-01-01

Report describes design and low-temperature tests of low-noise GaAs microwave amplifier combined with microstrip band-pass filter. Two versions of microstrip filter used in alternate tests; in one version, microstrips formed as films of high-transition-temperature superconductor Y/Ba/Cu/O on lanthanum aluminate substrate with gold film as ground plane. Other version identical except microstrips as well as ground plane made of gold, normally conductive.

Environmental Noise Assessment for Military Aircraft Training Routes. Volume 1. SAC (Strategic Air Command) Low-Level Routes.

DTIC Science & Technology

1987-04-01

consisted of Larson Davis Model 700 dosimeters, fitted with GenRad 1571-9065 I-inch piezoelectric micro- phones and PCB Piezotronics 402A line amplifiers...frequency acoustic energy. This would bear further examination under more controlled test conditions. The bulk of acoustic energy was clearly in the...Mantey, R.A., "Preliminary Evaluation of Low- Frequency Noise and Vibration Reduction Retrofit Concepts for Wood Frame Structures", Wyle Research

MMIC Phased Array Demonstrations with ACTS

NASA Technical Reports Server (NTRS)

Raquet, Charles A. (Compiler); Martzaklis, Konstantinos (Compiler); Zakrajsek, Robert J. (Compiler); Andro, Monty (Compiler); Turtle, John P.

1996-01-01

Over a one year period from May 1994 to May 1995, a number of demonstrations were conducted by the NASA Lewis Research Center (LeRC) in which voice, data, and/or video links were established via NASA's advanced communications technology satellite (ACTS) between the ACTS link evaluation terminal (LET) in Cleveland, OH, and aeronautical and mobile or fixed Earth terminals having monolithic microwave integrated circuit (MMIC) phased array antenna systems. This paper describes four of these. In one, a duplex voice link between an aeronautical terminal on the LeRC Learjet and the ACTS was achieved. Two others demonstrated duplex voice (and in one case video as well) links between the ACTS and an Army vehicle. The fourth demonstrated a high data rate downlink from ACTS to a fixed terminal. Array antenna systems used in these demonstrations were developed by LeRC and featured LeRC and Air Force experimental arrays using gallium arsenide MMIC devices at each radiating element for electronic beam steering and distributed power amplification. The single 30 GHz transmit array was developed by NASA/LeRC and Texas Instruments. The three 20 GHz receive arrays were developed in a cooperative effort with the Air Force Rome Laboratory, taking advantage of existing Air Force array development contracts with Boeing and Lockheed Martin. The paper describes the four proof-of-concept arrays and the array control system. The system configured for each of the demonstrations is described, and results are discussed.

Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, T. C.; Mutus, J. Y.; Hoi, I.-C.

Josephson parametric amplifiers have become a critical tool in superconducting device physics due to their high gain and quantum-limited noise. Traveling wave parametric amplifiers (TWPAs) promise similar noise performance, while allowing for significant increases in both bandwidth and dynamic range. We present a TWPA device based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted λ/4 resonators at regular intervals along the transmission line in order to maintain the phase matching condition between pump, signal, and idler and increase gain. We achieve an average gain of 12 dB acrossmore » a 4 GHz span, along with an average saturation power of −92 dBm with noise approaching the quantum limit.« less

Carbon Nanotube-Poly(vinylalcohol) Nanocomposite Film Devices: Applications for Femtosecond Fiber Laser Mode Lockers and Optical Amplifier Noise Suppressors

NASA Astrophysics Data System (ADS)

Sakakibara, Youichi; Rozhin, Aleksey G.; Kataura, Hiromichi; Achiba, Yohji; Tokumoto, Madoka

2005-04-01

We fabricated single-wall carbon nanotube (SWNT)/poly(vinylalcohol) (PVA) nanocomposite freestanding films and examined their application in devices in which the saturable absorption of SWNTs at near-infrared optical telecommunication wavelengths can be utilized. In a passively mode-locked fiber laser, we integrated a 30-μm-thick SWNT/PVA film into a fiber connection adaptor with the film sandwiched by a pair of fiber ferrules. A ring fiber laser with a SWNT/PVA saturable absorber was operated very easily in the mode-locked short-pulse mode with a pulse width of about 500 fs. Reproducible stable device performance was confirmed. In examining noise suppression for optical amplifiers, mixed light of semiconductor amplified spontaneous emission (ASE) source and 370 fs laser pulses was passed through a 100-μm-thick SWNT/PVA film. The transmission loss of the femtosecond pulse light was smaller than that of the ASE light. This proved that the SWNT/PVA film has the ability to suppress ASE noise.

The Alternative Low Noise Fan

NASA Technical Reports Server (NTRS)

Dittmar, James H.; Elliott, David M.; Jeracki, Robert J.; Moore, Royce D.; Parrott, Tony L.

2000-01-01

A 106 bladed fan with a design takeoff tip speed of 1100 ft/sec was hypothesized as reducing perceived noise because of the shift of the blade passing harmonics to frequencies beyond the perceived noise rating range. A 22 in. model of this Alternative Low Noise Fan, ALNF, was tested in the NASA Glenn 9x 15 Wind Tunnel. 'Me fan was tested with a 7 vane long chord stator assembly and a 70 vane conventional stator assembly in both hard and acoustically treated configurations. In addition a partially treated 7 vane configuration was tested wherein the acoustic material between the 7 long chord stators was made inactive. The noise data from the 106 bladed fan with 7 long chord stators in a hard configuration was shown to be around 4 EPNdB quieter than a low tip speed Allison fan at takeoff and around 5 EPNdB quieter at approach. Although the tone noise behaved as hypothesized, the majority of this noise reduction was from reduced broadband noise related to the large number of rotor blades. This 106 bladed ALNF is a research fan designed to push the technology limits and as such is probably not a practical device with present materials technology. However, a low tip speed fan with around 50 blades would be a practical device and calculations indicate that it could be 2 to 3 EPNdB quieter at takeoff and 3 to 4 EPNdB quieter at approach than the Allison fan. 7 vane data compared with 70 vane data indicated that the tone noise was controlled by rotor wake-stator interaction but that the broadband noise is probably controlled by the interaction of the rotor with incoming flows. A possible multiple pure tone noise reduction technique for a fan/acoustic treatment system was identified. The data from the fully treated configuration showed significant noise reductions over a large frequency range thereby providing a real tribute to this bulk absorber treatment design. The tone noise data with the partially treated 7 vane configuration indicated that acoustic material in the